WorldWideScience

Sample records for polished mos oxides

  1. Thermochemical study of MoS2 oxidation

    International Nuclear Information System (INIS)

    Filimonov, D.S.; Topor, N.D.; Kesler, Ya.A.

    1990-01-01

    Thermochemical studies of oxidation processes of metallic molybdenum, sulfur, molybdenum disulfide under different conditions in microcalorimeter are conducted. Values of thermal effects which are used to calculate standard formation enthalpy of MoS 2 and which correlate well are obtained. Δ f H 0 (MoS 2 ,298.15 K) recommended value constitutes (-223.0±16.7) kJ/mol

  2. Neutron induced degradation in nitrided pyrogenic field oxide MOS capacitors

    CERN Document Server

    Vaidya, S J; Shaikh, A M; Chandorkar, A N

    2002-01-01

    Neutron induced oxide charge trapping and generation of interface states in MOS capacitors with pyrogenic and nitrided pyrogenic field oxides have been studied. In order to assess the damage due to neutrons alone, it is necessary to account for the damage produced by the accompanying gamma rays from neutron radiation. This is done by measuring the intensity of gamma radiation accompanying neutrons at different neutron fluences at the irradiation position. MOS capacitor structures were subjected to neutron radiation in a swimming pool type of reactor. Other samples from the same batch were then subjected to an equivalent dose of gamma radiation from a Co sup 6 sup 0 source. The difference in the damage observed was used to characterize the damage caused by neutrons. It is observed that neutrons, though uncharged, are capable of causing ionization damage. This damage is found to be significant when the radiation is performed under biased conditions. Nitridation in different ambients is found to improve the radi...

  3. Chemical polishing of partially oxidized T-111 alloy

    International Nuclear Information System (INIS)

    Teaney, P.E.

    1974-01-01

    The specimens were pressure-mounted in Bakelite and ground through 600 grit on silicon carbide papers. The specimens were rough-polished on a vibratory polisher for 4 to 6 h, using a water slurry of one micron alumina on Texmet, followed by 0.3-μ alumina on Texmet overnight. Final polishing was accomplished by continuous swabbing with a chemical polish. A chemical polish consisting of ten parts lactic acid, four parts nitric acid, and four parts hydrofluoric acid worked well for the T-111 parent material specimens; however, in the partially oxidized specimens, considerable pitting and staining occurred in the oxygen-affected zone and in the transition zone between the oxygen-affected zone and the parent material. A chemical polish was developed for the partially oxidized specimens by adjusting the ratio of the acids to ten parts lactic acid, two parts nitric acid, and two parts hydrofluoric acid. This slowed the chemical attack on the oxygen-affected zone considerably and, with continuous swabbing, the pitting and stain could be avoided. The specimens were rinsed and checked occasionally on the metallograph to determine when the proper polish had been obtained. Some specimens required intermittent polishing times up to 1 / 2 hour. No relationship could be established between the oxygen content of the specimen and the time required for chemical polishing in the partially oxidized specimens. However, the microstructure of the transition zone was the most difficult to obtain, and specimens with uniform reaction zones across the width of the specimen polished quicker than those with the transition zone

  4. Oxidation of atomically thin MoS2 on SiO2

    Science.gov (United States)

    Yamamoto, Mahito; Cullen, William; Einstein, Theodore; Fuhrer, Michael

    2013-03-01

    Surface oxidation of MoS2 markedly affects its electronic, optical, and tribological properties. However, oxidative reactivity of atomically thin MoS2 has yet to be addressed. Here, we investigate oxidation of atomic layers of MoS2 using atomic force microscopy and Raman spectroscopy. MoS2 is mechanically exfoliated onto SiO2 and oxidized in Ar/O2 or Ar/O3 (ozone) at 100-450 °C. MoS2 is much more reactive to O2 than an analogous atomic membrane of graphene and monolayer MoS2 is completely etched very rapidly upon O2 treatment above 300 °C. Thicker MoS2 (> 15 nm) transforms into MoO3 after oxidation at 400 °C, which is confirmed by a Raman peak at 820 cm-1. However, few-layer MoS2 oxidized below 400 °C exhibits no MoO3 Raman mode but etch pits are formed, similar to graphene. We find atomic layers of MoS2 shows larger reactivity to O3 than to O2 and monolayer MoS2 transforms chemically upon O3 treatment even below 100 °C. Work supported by the U. of Maryland NSF-MRSEC under Grant No. DMR 05-20741.

  5. Neutron induced degradation in nitrided pyrogenic field oxide MOS capacitors

    Science.gov (United States)

    Vaidya, S. J.; Sharma, D. K.; Shaikh, A. M.; Chandorkar, A. N.

    2002-09-01

    Neutron induced oxide charge trapping and generation of interface states in MOS capacitors with pyrogenic and nitrided pyrogenic field oxides have been studied. In order to assess the damage due to neutrons alone, it is necessary to account for the damage produced by the accompanying gamma rays from neutron radiation. This is done by measuring the intensity of gamma radiation accompanying neutrons at different neutron fluences at the irradiation position. MOS capacitor structures were subjected to neutron radiation in a swimming pool type of reactor. Other samples from the same batch were then subjected to an equivalent dose of gamma radiation from a Co 60 source. The difference in the damage observed was used to characterize the damage caused by neutrons. It is observed that neutrons, though uncharged, are capable of causing ionization damage. This damage is found to be significant when the radiation is performed under biased conditions. Nitridation in different ambients is found to improve the radiation performance of pyrogenic field oxides with respect to positive charge build up as well as interface state generation. Pyrogenic oxide nitrided in N 2O is found to be the best oxynitride as damage due to neutrons is the least.

  6. Preparation of nanostructured and nanosheets of MoS2 oxide using oxidation method.

    Science.gov (United States)

    Amini, Majed; Ramazani S A, Ahmad; Faghihi, Morteza; Fattahpour, Seyyedfaridoddin

    2017-11-01

    Molybdenum disulfide (MoS 2 ), a two-dimensional transition metal has a 2D layered structure and has recently attracted attention due to its novel catalytic properties. In this study, MoS 2 has been successfully intercalated using chemical and physical intercalation techniques, while enhancing its surface properties. The final intercalated MoS 2 is of many interests because of its low-dimensional and potential properties in in-situ catalysis. In this research, we report different methods to intercalate the layers of MoS 2 successfully using acid-treatment, ultrasonication, oxidation and thermal shocking. The other goal of this study is to form SO bonds mainly because of expected enhanced in-situ catalytic operations. The intercalated MoS 2 is further characterized using analyses such as Fourier Transform Infrared Spectroscopy (FTIR), Raman, Contact Angle, X-ray diffraction (XRD), Field Emission Scanning Electron Microscope (FESEM), Energy Dispersive X-Ray Microanalysis (EDAX), Transmission electron microscopy (TEM), and BET. Copyright © 2017. Published by Elsevier B.V.

  7. The effects of gate oxide thickness on radiation damage in MOS system

    International Nuclear Information System (INIS)

    Zhu Hui; Yan Rongliang; Wang Yu; He Jinming

    1988-01-01

    The dependences of the flatband voltage shift (ΔV FB ) and the threshold voltage shift (ΔV TH ) in MOS system on the oxide thickness (T ox ) and on total irradiated dose (D) of electron-beam and 60 Co γ-ray have been studied. It has been found that ΔV FB ∝ T ox 3 , with +10V of gate bias during irradiation for n-Si substrate MOS capacitors; ΔV TH ∝ T ox 3 D 2/3 , with 'on' gate bias during irradiation for n- and P-channel MOS transistors; ΔV TP ∝ T ox 2 D 2/3 , with 'off' gate bias during irradiation for P-channel MOS transistors. These results are explained by Viswanathan model. According to ∼T ox 3 dependence, the optimization of radiation hardening process for MOS system is also simply discussed

  8. Preparation of cerium oxide for lens polishing powder

    International Nuclear Information System (INIS)

    Injarean, Uthaiwan; Rodthongkom, Chouvana; Pichestapong, Pipat; Changkrurng, Kalaya

    2003-10-01

    Cerium is an element of rare earth group which is called lanthanide series. It is found in the ores like monazite and xenotime which are the tailings of tin mines in the south of Thailand. Cerium is used mostly as lens polishing powder besides the applications in other industries. In this study, cerium extracted from monazite ore breakdown by alkaline process was used for the preparation of lens polishing powder. Cerium hydroxide cake from the process was dissolved by hydrochloric acid and precipitated with oxalic acid. The oxalate precipitate then was calcined to oxide powder and its particle size was measured. Precipitation conditions being studied are concentration of feed cerium chloride solution, concentration of oxalic acid used for the precipitation, concentration of sulfuric acid used as precipitation control reagent and the precipitation temperature. It was found that the appropriate precipitation conditions yielded the fine oxide powder with particle size about 12μm. The oxide powder can be ground to the size of 1-3 μm which is suitable for making lens polishing powder

  9. Formation of oxide-trapped charges in 6H-SiC MOS structures

    Energy Technology Data Exchange (ETDEWEB)

    Yoshikawa, Masahito; Ohshima, Takeshi; Itoh, Hisayoshi; Nashiyama, Isamu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Okumura, Hajime; Yoshida, Sadafumi

    1997-03-01

    The silicon and the carbon faces of hexagonal silicon carbide (6H-SiC) substrates were oxidized pyrogenically at 1100degC, and the metal-oxide-semiconductor structures were formed on these faces. The MOS capacitors developed using the silicon and the carbon faces were irradiated with {sup 60}Co gamma-rays under argon atmosphere at room temperature. The bias voltages with the different polarity were applied to the gate electrode during irradiation to examine the formation mechanisms of the trapped charges in the oxides of these MOS capacitors. The amount of the trapped charges in the oxide were obtained from capacitance pulse voltage characteristics. The generation of the trapped charges are affects with not only the absorbed dose but also the bias polarity applied to the gate electrodes during irradiation. The formation mechanisms of the trapped charges in the oxides were estimated in conjunction with the surface orientation of 6H-SiC substrates. (author)

  10. Research status in ultra-precision machining of silicon carbide parts by oxidation-assisted polishing

    Directory of Open Access Journals (Sweden)

    Xinmin SHEN

    2016-10-01

    Full Text Available Oxidation-assisted polishing is an important machining method for obtaining SiC parts with high precision. Through plasma oxidation, thermal oxidation, and anodic oxidation, soft oxide can be obtained on the RS-SiC substrate. With the assistance of abrasive polishing to remove the oxide rapidly, the material removal rate can be increased and the surface quality can be improved. The research results indicate that the surface roughness root-mean-square (RMS and roughness-average (Ra can reach 0.626 nm and 0.480 nm by plasma oxidation-assisted polishing; in thermal oxidation-assisted polishing, the RMS and Ra can be 0.920 nm and 0.726 nm; in anodic oxidation, the calculated oxidation rate is 5.3 nm/s based on Deal-Grove model, and the RMS and Ra are 4.428 nm and 3.453 nm respectively in anodic oxidation-assisted polishing. The oxidation-assisted polishing can be propitious to improve the process level in machining RS-SiC, which would promote the application of SiC parts in optics and ceramics fields.

  11. Preparation and tribological properties of MoS2/graphene oxide composites

    Science.gov (United States)

    Song, Haojie; Wang, Biao; Zhou, Qiang; Xiao, Jiaxuan; Jia, Xiaohua

    2017-10-01

    A hydrothermal route is developed for the synthesis of MoS2/graphene oxide (GO) composites based on the hydrothermal reduction of Na2MoO4 and GO sheets with L-cysteine. The MoS2/GO composites in improving friction and wear of the sunshine oil on sliding steel surfaces under low or high applied load were demonstrated. In tests with sliding steel surfaces, the sunshine oil that contains small amounts of MoS2/GO composites exhibited the lowest specific friction coefficient and wear rate under all of the sliding conditions. Scanning electron microscopy and energy dispersive spectrometer performed to analyze the wear scar surfaces after friction confirmed that the outstanding lubrication performance of MoS2/GO composites could be attributed to their good dispersion stability and extremely thin laminated structure, which allow the MoS2/GO composites to easily enter the contact area, thereby preventing the rough surfaces from coming into direct contact.

  12. Attapulgite-CeO2/MoS2 ternary nanocomposite for photocatalytic oxidative desulfurization

    Science.gov (United States)

    Li, Xiazhang; Zhang, Zuosong; Yao, Chao; Lu, Xiaowang; Zhao, Xiaobing; Ni, Chaoying

    2016-02-01

    Novel attapulgite(ATP)-CeO2/MoS2 ternary nanocomposites were synthesized by microwave assisted assembly method. The structures of the nanocomposites were characterized by XRD, FT-IR, UV-vis, XPS and in situ TEM. The photocatalytic activities of ATP-CeO2/MoS2 composites were investigated by degradating dibenzothiophene (DBT) in gasoline under visible light irradiation. The effect of the mass ratio of CeO2 to MoS2 on photocatalytic activity was investigated. The results indicate that the three-dimensional network structure is firmly constructed by ATP skeleton, CeO2 particles and MoS2 nanosheet which effectively increase the surface area of the composites and promote the separation of electrons and holes by resulting electronic transmission channels of multi-channel in space. The degradation rate of DBT can reach 95% under 3 h irradiation when the mass ratio of CeO2/MoS2 is 4/10. A plausible mechanism for the photocatalytic oxidative desulfurization of this nanocomposite is put forward.

  13. Impact of Microstructure on MoS2 Oxidation and Friction.

    Science.gov (United States)

    Curry, John F; Wilson, Mark A; Luftman, Henry S; Strandwitz, Nicholas C; Argibay, Nicolas; Chandross, Michael; Sidebottom, Mark A; Krick, Brandon A

    2017-08-23

    This work demonstrates the role of microstructure in the friction and oxidation behavior of the lamellar solid lubricant molybdenum disulfide (MoS 2 ). We report on systematic investigations of oxidation and friction for two MoS 2 films with distinctively different microstructures-amorphous and planar/highly-ordered-before and after exposure to atomic oxygen (AO) and high-temperature (250 °C) molecular oxygen. A combination of experimental tribology, molecular dynamics simulations, X-ray photoelectron spectroscopy (XPS), and high-sensitivity low-energy ion scattering (HS-LEIS) was used to reveal new insights about the links between structure and properties of these widely utilized low-friction materials. Initially, ordered MoS 2 films showed a surprising resistance to both atomic and molecular oxygens (even at elevated temperature), retaining characteristic low friction after exposure to extreme oxidative environments. XPS shows comparable oxidation of both coatings via AO; however, monolayer resolved compositional depth profiles from HS-LEIS reveal that the microstructure of the ordered coatings limits oxidation to the first atomic layer.

  14. Layer-by-Layer Hybrids of MoS2 and Reduced Graphene Oxide for Lithium Ion Batteries

    International Nuclear Information System (INIS)

    Jing, Yu; Ortiz-Quiles, Edwin O.; Cabrera, Carlos R.; Chen, Zhongfang; Zhou, Zhen

    2014-01-01

    Highlights: • Layer-by-layer MoS 2 /rGO hybrids were prepared by rGO involved lithiation-exfoliation method. • This hybrid exhibited enhanced electrochemical performances due to the existence of rGO. • The roles of rGO in different charging/discharging processes were interpreted by computations. - Abstract: Two-dimensional MoS 2 shows great potential for effective Li storage due to its good thermal and chemical stability, high theoretical capacity, and experimental accessibility. However, the poor electrical conductivity and the restacking tendency significantly restrict its applications to lithium ion batteries (LIBs). To overcome these problems, we introduced reduced graphene oxides (rGO) to the intercalation-exfoliation preparation process of few-layered MoS 2 and obtained layer-by-layer MoS 2 /rGO hybrids. With the addition of rGO, the restacking of MoS 2 layers was apparently inhibited, and MoS 2 with 1 ∼ 3 layers was obtained in the composite. Due to the positive role of rGO, MoS 2 /rGO hybrids exhibited highly enhanced cyclic stability and high-rate performances as LIB anodes in comparison with bare MoS 2 layers or bulk MoS 2 . Moreover, the experimental results were well interpreted through density functional theory computations

  15. Uniform photoresponse in thermally oxidized Ni and MoS2 heterostructures

    International Nuclear Information System (INIS)

    Luo, Wei; Peng, Gang; Wang, Fei; Miao, Feng; Zhang, Xue-Ao; Qin, Shiqiao

    2017-01-01

    Non-uniform photocurrent is usually generated at the overlapped region of the heterostructures, and its potential applications may be hindered by the spatial uniformity issue of the device photoresponse. Here, nearly a uniform photoresponse at the overlapped region of the thermally oxidized Ni and molybdenum disulphide (MoS 2 ) heterostructures is obtained. Further characterizations reveal that several nanometers Ni is rightly under the NiO x layer formed at the surface of the film in the oxidation process. The heterostructures based on layered MoS 2 /NiO x /Ni with highly conductive bottom Ni show a high uniform photoresponse with an external quantum efficiency (EQE) of 1.4% at 532 nm. Moreover, successful integration of multiple devices suggests a great priority for such a structure for highly integrated uniform photodetectors. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Highly sensitive MOS photodetector with wide band responsivity assisted by nanoporous anodic aluminum oxide membrane.

    Science.gov (United States)

    Chen, Yungting; Cheng, Tzuhuan; Cheng, Chungliang; Wang, Chunhsiung; Chen, Chihwei; Wei, Chihming; Chen, Yangfang

    2010-01-04

    A new approach for developing highly sensitive MOS photodetector based on the assistance of anodic aluminum oxide (AAO) membrane is proposed, fabricated, and characterized. It enables the photodetector with the tunability of not only the intensity but also the range of the response. Under a forward bias, the response of the MOS photodetector with AAO membrane covers the visible as well as infrared spectrum; however, under a reverse bias, the near-infrared light around Si band edge dominates the photoresponse. Unlike general MOS photodetectors which only work under a reverse bias, our MOS photodetectors can work even under a forward bias, and the responsivity at the optical communication wavelength of 850nm can reach up to 0.24 A/W with an external quantum efficiency (EQE) of 35%. Moreover, the response shows a large enhancement factor of 10 times at 1050 nm under a reverse bias of 0.5V comparing with the device without AAO membrane. The underlying mechanism for the novel properties of the newly designed device has been proposed.

  17. Visible light responsive Cu2MoS4 nanosheets incorporated reduced graphene oxide for efficient degradation of organic pollutant

    Science.gov (United States)

    Rameshbabu, R.; Vinoth, R.; Navaneethan, M.; Harish, S.; Hayakawa, Y.; Neppolian, B.

    2017-10-01

    Visible light active copper molybdenum sulfide (Cu2MoS4) nanosheets were successfully anchored on reduced graphene oxide (rGO) using facile hydrothermal method. During the hydrothermal reaction, reduction of graphene oxide into rGO and the formation of Cu2MoS4 nanosheets were successfully obtained. The charge transfer interaction between the rGO sheets and Cu2MoS4 nanosheets extended the absorption to visible region in comparison with bare Cu2MoS4 nanosheets i.e without rGO sheets. Furthermore, the notable photoluminescence quenching observed for Cu2MoS4/rGO nanocomposite revealed the effective role of rGO towards the significant inhibition of electron-hole pair recombination. The photocatalytic efficiencies of bare Cu2MoS4 and Cu2MoS4/rGO nanocomposite was evaluated for the degradation of methyl orange dye under visible irradiation (λ > 420 nm). A maximum photodegradation efficiency of 99% was achieved for Cu2MoS4/rGO nanocomposite, while only 64% photodegradation was noted for bare Cu2MoS4. The enhanced optical absorption in visible region, high surface area, and low charge carrier recombination in the presence of rGO sheets were the main reasons for the enhancement in photodegardation of MO dye. In addition, the resultant Cu2MoS4/rGO nanocomposite was found to be reusable for five successive cycles without significant loss in its photocatalytic performance.

  18. Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

    International Nuclear Information System (INIS)

    Lee, Ching-Sung; Hung, Chun-Tse; Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lai, Ying-Nan

    2012-01-01

    Al 0.22 Ga 0.78 As/In 0.24 Ga 0.76 As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300–450 K are also studied. (paper)

  19. Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method

    Energy Technology Data Exchange (ETDEWEB)

    Saitoh, Kazunari; Takahashi, Yoshihiro; Ohnishi, Kazunori [Nihon Univ., Tokyo (Japan). Coll. of Science and Technology; Yoshikawa, Masahito; Ohshima, Takeshi; Itoh, Hisayoshi; Nashiyama, Isamu

    1997-03-01

    In this paper, we propose a method to evaluate the depth profile of trapped charges in an oxide layer on SiC. Using this method, 6H-SiC MOS structures with different oxide thickness were fabricated on the same substrate under the same oxidation condition, and the depth profile of oxide-trapped charges before and after {sup 60}Co-gamma ray irradiation were obtained. It is found, from the depth profiling, that the trapping mechanism of electrons and holes in the oxide strongly depends on the bias polarity during irradiation, and these charges are trapped near 6H-SiC/SiO{sub 2} interface. We believe that this method is very useful for estimation of the oxide-trapped charges in 6H-SiC MOS structures. (author)

  20. Chemical mechanical glass polishing with cerium oxide: Effect of selected physico-chemical characteristics on polishing efficiency

    Czech Academy of Sciences Publication Activity Database

    Janoš, P.; Ederer, J.; Pilařová, V.; Henych, Jiří; Tolasz, Jakub; Milde, D.; Opletal, T.

    2016-01-01

    Roč. 362, SEP (2016), s. 114-120 ISSN 0043-1648 R&D Projects: GA MŠk(CZ) LM2015073 Institutional support: RVO:61388980 Keywords : Chemical mechanical polishing * Ceria-based polishing powders * Polishing efficienc Subject RIV: CA - Inorganic Chemistry Impact factor: 2.531, year: 2016

  1. Radiation effects on the electrical properties of hafnium oxide based MOS capacitors.

    Energy Technology Data Exchange (ETDEWEB)

    Petrosky, J. C. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH); McClory, J. W. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH); Bielejec, Edward Salvador; Foster, J. C. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH)

    2010-10-01

    Hafnium oxide-based MOS capacitors were investigated to determine electrical property response to radiation environments. In situ capacitance versus voltage measurements were analyzed to identify voltage shifting as a result of changes to trapped charge with increasing dose of gamma, neutron, and ion radiation. In situ measurements required investigation and optimization of capacitor fabrication to include dicing, cleaning, metalization, packaging, and wire bonding. A top metal contact of 200 angstroms of titanium followed by 2800 angstroms of gold allowed for repeatable wire bonding and proper electrical response. Gamma and ion irradiations of atomic layer deposited hafnium oxide on silicon devices both resulted in a midgap voltage shift of no more than 0.2 V toward less positive voltages. This shift indicates recombination of radiation induced positive charge with negative trapped charge in the bulk oxide. Silicon ion irradiation caused interface effects in addition to oxide trap effects that resulted in a flatband voltage shift of approximately 0.6 V also toward less positive voltages. Additionally, no bias dependent voltage shifts with gamma irradiation and strong oxide capacitance room temperature annealing after ion irradiation was observed. These characteristics, in addition to the small voltage shifts observed, demonstrate the radiation hardness of hafnium oxide and its applicability for use in space systems.

  2. Investigation of structural and electrical properties on substrate material for high frequency metal-oxide-semiconductor (MOS) devices

    Science.gov (United States)

    Kumar, M.; Yang, Sung-Hyun; Janardhan Reddy, K.; JagadeeshChandra, S. V.

    2017-04-01

    Hafnium oxide (HfO2) thin films were grown on cleaned P-type Ge and Si substrates by using atomic layer deposition technique (ALD) with thickness of 8 nm. The composition analysis of as-deposited and annealed HfO2 films was characterized by XPS, further electrical measurements; we fabricated the metal-oxide-semiconductor (MOS) devices with Pt electrode. Post deposition annealing in O2 ambient at 500 °C for 30 min was carried out on both Ge and Si devices. Capacitance-voltage (C-V) and conductance-voltage (G-V) curves measured at 1 MHz. The Ge MOS devices showed improved interfacial and electrical properties, high dielectric constant (~19), smaller EOT value (0.7 nm), and smaller D it value as Si MOS devices. The C-V curves shown significantly high accumulation capacitance values from Ge devices, relatively when compare with the Si MOS devices before and after annealing. It could be due to the presence of very thin interfacial layer at HfO2/Ge stacks than HfO2/Si stacks conformed by the HRTEM images. Besides, from current-voltage (I-V) curves of the Ge devices exhibited similar leakage current as Si devices. Therefore, Ge might be a reliable substrate material for structural, electrical and high frequency applications.

  3. MoS2 nanosheets direct supported on reduced graphene oxide: An advanced electrocatalyst for hydrogen evolution reaction.

    Directory of Open Access Journals (Sweden)

    Jiamu Cao

    Full Text Available Molybdenum disulfide nanosheets/reduced graphene oxide (MoS2 NSs/rGO nanohybrid as a highly effective catalyst for hydrogen evolution reaction (HER have been successfully synthesized by a facile microwave-assisted method. The results clearly reveal that direct grown of MoS2 NSs on rGO have been achieved. Electrochemical tests show that the as-prepared hybrid material exhibited excellent HER activity, with a small Tafel slope of 57 mV dec-1, an overpotential of 130 mV and remarkable cycling stability. After analysis, the observed outstanding catalytic performance can be attributed to the uniform distribution of the MoS2 NSs, which are characterized by the presence of multiple active sites as well as the effective electron transport route provided by the conductive rGO substrate. Moreover, according to the classic theory, the mechanism governing of the catalytic HER on the MoS2 NSs/rGO nanohybrid has been clarified.

  4. Influences of Different Components on Agglomeration Behavior of MoS2 During Oxidation Roasting Process in Air

    Science.gov (United States)

    Wang, Lu; Zhang, Guo-Hua; Wang, Jing-Song; Chou, Kuo-Chih

    2016-08-01

    An agglomeration of the furnace charge always takes place during the oxidation roasting process of molybdenite concentrate (with the main component of MoS2) in multiple hearth furnaces, which greatly affects the production process and furnace service life. In the present work, a preliminary study about the influence of various components on the agglomeration phenomenon of pure MoS2 have been carried out. The results show that reaction temperature, impurity content, and air flow rate have significant effects on the agglomeration extent. Meanwhile, the impurity type added into the pure MoS2 plays a crucial role. It was found that CaO and MgO have a stronger sulfur-fixing effect and that the desulphurization of the roasted product was uncompleted. It was also concluded that the agglomeration is due to the formation of low-melting-point eutectics, including that between MoO3 and impurities and that between MoO3 and Mo4O11. It is suggested that decreasing the impurities contents, especially K, Cu, Pb, and Fe, is an effective method for reducing the extent of agglomeration.

  5. Equivalent distributed capacitance model of oxide traps on frequency dispersion of C-V curve for MOS capacitors

    Science.gov (United States)

    Lu, Han-Han; Xu, Jing-Ping; Liu, Lu; Lai, Pui-To; Tang, Wing-Man

    2016-11-01

    An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C-V curve of MOS capacitors measured for a frequency range from 1 kHz to 1 MHz. The proposed model is based on the Fermi-Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal. The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data. Simulations indicate that the capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface, with negligible effects from the traps far from the interface, and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed. In addition, by excluding the negligible effect of oxide-trap conductance, the model avoids the use of imaginary numbers and complex calculations, and thus is simple and intuitive. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112), the University Development Fund of the University of Hong Kong, China (Grant No. 00600009), and the Hong Kong Polytechnic University, China (Grant No. 1-ZVB1).

  6. Equivalent distributed capacitance model of oxide traps on frequency dispersion of C – V curve for MOS capacitors

    International Nuclear Information System (INIS)

    Lu Han-Han; Xu Jing-Ping; Liu Lu; Lai Pui-To; Tang Wing-Man

    2016-01-01

    An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C – V curve of MOS capacitors measured for a frequency range from 1 kHz to 1 MHz. The proposed model is based on the Fermi–Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal. The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data. Simulations indicate that the capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface, with negligible effects from the traps far from the interface, and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed. In addition, by excluding the negligible effect of oxide-trap conductance, the model avoids the use of imaginary numbers and complex calculations, and thus is simple and intuitive. (paper)

  7. Oxidation of MoS2 by thermal and hyperthermal atomic oxygen

    International Nuclear Information System (INIS)

    Cross, J.B.; Martin, J.A.; Pope, L.E.; Koontz, S.L.

    1989-01-01

    The present study shows that, at 1.5 eV O-atom translational energy, SO 2 is generated and outgases from an anhydrous MoS 2 surface with a reactivity nearly that of kapton. The reaction of atomic oxygen with MoS 2 has little or no translational energy barrier; i.e., thermally generated atomic oxygen reacts as readily as that having 1.5 eV of translational energy. It is also shown that water present in the flowing afterglow apparatus used to study thermal O-atom reactivity formed sulfates on the MoS 2 surface and that the sulfate is most likely in the form of sulfuric acid. These results imply that water dumps or outgasing in low earth orbit have the potential of forming sulfuric acid covered surfaces on MoS 2 lubricants. Friction measurements show a high initial friction coefficient (0.2) for O-atom exposed MoS 2 surfaces which drops to the normal low value (0.05) after several cycles of operation

  8. Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

    International Nuclear Information System (INIS)

    Wang Liang-Yong; Liu Bo; Song Zhi-Tang; Liu Wei-Li; Feng Song-Lin; David Huang; Babu, S.V

    2011-01-01

    We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing. By using zeta potential analyzer, particle size analyzer, horizon profilometer, thermogravimetric analysis and Fourier transform infrared spectroscopy, the pre- and the post-polished wafer surfaces as well as the pre- and the post-used ceria-based slurries are compared. Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed. (interdisciplinary physics and related areas of science and technology)

  9. Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

    Institute of Scientific and Technical Information of China (English)

    Wang Liang-Yong; Liu Bo; Song Zhi-Tang; Liu Wei-Li; Feng Song-Lin; David Huang; S.V Babu

    2011-01-01

    We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing. By using zeta potential analyzer, particle size analyzer, horizon profilometer, thermogravimetric analysis and Fourier transform infrared spectroscopy, the pre-and the post-polished wafer surfaces as well as the pre-and the post-used ceria-based slurries are compared. Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed.

  10. Contribution to the study of low-energy X-ray-induced degradations on the oxide-silicon interfacial transition layer of MOS structures

    International Nuclear Information System (INIS)

    Boukabache, Ali

    1983-01-01

    The Si-SiO_2 interface is considered as a transition layer. Its thickness is typically about 10 A. It contains traps which exchange charges with silicon by a tunneling mechanism. Its influence on MOS capacitor, gate-controlled diode and MOS transistor is analyzed. Long channel MOST's (P-Substrate) are irradiated with low energy X-ray (between 0 and 240 Krads) in order to validate the model. Capacitance, recombination velocity and 1/f noise measurements indicate that the X- ray induce traps distributed in space and in energy. These traps provoke a decrease in mobility. Additionally, X-rays create a fixed oxide charge which induce a shift in the characteristics of MOS structures. Finally, under irradiation the behaviour of the gate-controlled diode and the MOS capacitor are in accordance with theoretical model of the interfacial layer. The overall noise behaviour cannot be explained by existing theoretical models. (author) [fr

  11. MoS2/reduced graphene oxide nanocomposite for sensitive sensing of cysteamine in presence of uric acid in human plasma

    International Nuclear Information System (INIS)

    Chekin, Fereshteh; Boukherroub, Rabah; Szunerits, Sabine

    2017-01-01

    A hybrid nanocomposite of MoS 2 nanosheets and reduced graphene oxide (rGO) was fabricated by a facile and effective method. The morphology and structure of the nanocomposite (MoS 2 -rGO) were characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, electrochemical impedance spectroscopy and cyclic voltammetry. The MoS 2 nanosheets were uniformly anchored on the rGO framework with strong adhesion. A glassy carbon electrode modified by drop-casting with MoS 2 -rGO was used for the electrochemical oxidation of cysteamine (CA) in the presence of uric acid (UA). Under optimum conditions, the anodic peak current of CA shows a linear relation with the CA concentration between 0.01 and 20 μM with a detection limit of 7 nM. The proposed electrochemical sensor was used for determination of CA in human plasma. - Highlights: • The hybrid nanocomposite composed of MoS 2 nanosheets and reduced graphene oxide was fabricated by a facile and effective method. • The MoS 2 nanosheets were uniformly anchored on the rGO framework with strong adhesion. • Glassy carbon electrodes modified with MoS 2 -rGO was used for electro-oxidation of cysteamine (CA) in presence of uric acid (UA). • The anodic peak current of CA at the surface of modified electrode is linear to its concentration ranges at 0.01 to 20 μM with a detection limit of 7 nM. • The proposed electrochemical sensor was used for determination of CA in human plasma. • The accuracy of the method was as excellent comparing with the obtained results using reference method.

  12. Synthesis of MoS2-reduced graphene oxide/Fe3O4 nanocomposite for enhanced electromagnetic interference shielding effectiveness

    Science.gov (United States)

    Prasad, Jagdees; Singh, Ashwani Kumar; Shah, Jyoti; Kotnala, R. K.; Singh, Kedar

    2018-05-01

    This article presents a facile two step hydrothermal process for the synthesis of MoS2-reduced graphene oxide/Fe3O4 (MoS2-rGO/Fe3O4) nanocomposite and its application as an excellent electromagnetic interference shielding material. Characterization tools like; scanning electron microscope, transmission electron microscope, x-ray diffraction, and Raman spectroscopy were used to confirm the formation of nanocomposite and found that spherical Fe3O4 nanoparticles are well dispersed over MoS2-rGO composite with average particle size ∼25–30 nm was confirmed by TEM. Structural characterization done by XRD was found inconsistent with the known lattice parameter of MoS2 nanosheet, reduced graphene oxide and Fe3O4 nanoparticles. Electromagnetic shielding effectiveness of MoS2-rGO/Fe3O4 nanocomposite was evaluated and found to be an excellent EMI shielding material in X-band range (8.0–12.0 GHz). MoS2-rGO composite shows poor shielding capacity (SET ∼ 3.81 dB) in entire range as compared to MoS2-rGO/Fe3O4 nanocomposite (SET ∼ 8.27 dB). It is due to interfacial polarization in the presence of EM field. The result indicates that MoS2-rGO/Fe3O4 nanocomposite provide a new stage for the next generation in high-performance EM wave absorption and EMI shielding effectiveness.

  13. Adsorption treatment of oxide chemical mechanical polishing wastewater from a semiconductor manufacturing plant by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Wei-Lung, E-mail: wlchou@sunrise.hk.edu.tw [Department of Safety, Health and Environmental Engineering, Hungkuang University, No. 34, Chung-Chie Road, Sha-Lu, Taichung 433, Taiwan (China); Wang, Chih-Ta [Department of Safety Health and Environmental Engineering, Chung Hwa University of Medical Technology, Tainan Hsien 717, Taiwan (China); Chang, Wen-Chun; Chang, Shih-Yu [Department of Safety, Health and Environmental Engineering, Hungkuang University, No. 34, Chung-Chie Road, Sha-Lu, Taichung 433, Taiwan (China)

    2010-08-15

    In this study, metal hydroxides generated during electrocoagulation (EC) were used to remove the chemical oxygen demand (COD) of oxide chemical mechanical polishing (oxide-CMP) wastewater from a semiconductor manufacturing plant by EC. Adsorption studies were conducted in a batch system for various current densities and temperatures. The COD concentration in the oxide-CMP wastewater was effectively removed and decreased by more than 90%, resulting in a final wastewater COD concentration that was below the Taiwan discharge standard (100 mg L{sup -1}). Since the processed wastewater quality exceeded the direct discharge standard, the effluent could be considered for reuse. The adsorption kinetic studies showed that the EC process was best described using the pseudo-second-order kinetic model at the various current densities and temperatures. The experimental data were also tested against different adsorption isotherm models to describe the EC process. The Freundlich adsorption isotherm model predictions matched satisfactorily with the experimental observations. Thermodynamic parameters, including the Gibbs free energy, enthalpy, and entropy, indicated that the COD adsorption of oxide-CMP wastewater on metal hydroxides was feasible, spontaneous and endothermic in the temperature range of 288-318 K.

  14. Adsorption treatment of oxide chemical mechanical polishing wastewater from a semiconductor manufacturing plant by electrocoagulation

    International Nuclear Information System (INIS)

    Chou, Wei-Lung; Wang, Chih-Ta; Chang, Wen-Chun; Chang, Shih-Yu

    2010-01-01

    In this study, metal hydroxides generated during electrocoagulation (EC) were used to remove the chemical oxygen demand (COD) of oxide chemical mechanical polishing (oxide-CMP) wastewater from a semiconductor manufacturing plant by EC. Adsorption studies were conducted in a batch system for various current densities and temperatures. The COD concentration in the oxide-CMP wastewater was effectively removed and decreased by more than 90%, resulting in a final wastewater COD concentration that was below the Taiwan discharge standard (100 mg L -1 ). Since the processed wastewater quality exceeded the direct discharge standard, the effluent could be considered for reuse. The adsorption kinetic studies showed that the EC process was best described using the pseudo-second-order kinetic model at the various current densities and temperatures. The experimental data were also tested against different adsorption isotherm models to describe the EC process. The Freundlich adsorption isotherm model predictions matched satisfactorily with the experimental observations. Thermodynamic parameters, including the Gibbs free energy, enthalpy, and entropy, indicated that the COD adsorption of oxide-CMP wastewater on metal hydroxides was feasible, spontaneous and endothermic in the temperature range of 288-318 K.

  15. Adsorption treatment of oxide chemical mechanical polishing wastewater from a semiconductor manufacturing plant by electrocoagulation.

    Science.gov (United States)

    Chou, Wei-Lung; Wang, Chih-Ta; Chang, Wen-Chun; Chang, Shih-Yu

    2010-08-15

    In this study, metal hydroxides generated during electrocoagulation (EC) were used to remove the chemical oxygen demand (COD) of oxide chemical mechanical polishing (oxide-CMP) wastewater from a semiconductor manufacturing plant by EC. Adsorption studies were conducted in a batch system for various current densities and temperatures. The COD concentration in the oxide-CMP wastewater was effectively removed and decreased by more than 90%, resulting in a final wastewater COD concentration that was below the Taiwan discharge standard (100 mg L(-1)). Since the processed wastewater quality exceeded the direct discharge standard, the effluent could be considered for reuse. The adsorption kinetic studies showed that the EC process was best described using the pseudo-second-order kinetic model at the various current densities and temperatures. The experimental data were also tested against different adsorption isotherm models to describe the EC process. The Freundlich adsorption isotherm model predictions matched satisfactorily with the experimental observations. Thermodynamic parameters, including the Gibbs free energy, enthalpy, and entropy, indicated that the COD adsorption of oxide-CMP wastewater on metal hydroxides was feasible, spontaneous and endothermic in the temperature range of 288-318 K. Copyright 2010 Elsevier B.V. All rights reserved.

  16. Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for conductive atomic force microscopy investigations

    International Nuclear Information System (INIS)

    Frammelsberger, Werner; Benstetter, Guenther; Stamp, Richard; Kiely, Janice; Schweinboeck, Thomas

    2005-01-01

    As charge tunnelling through thin and ultra-thin silicon dioxide layers is regarded as the driving force for MOS device degradation the determination and characterisation of electrically week spots is of paramount importance for device reliability and failure analysis. Conductive atomic force microscopy (C-AFM) is able to address this issue with a spatial resolution smaller than the expected breakdown spot. For the determination of the electrically active oxide thickness in practice an easy to use model with sufficient accuracy and which is largely independent of the oxide thickness is required. In this work a simplified method is presented that meets these demands. The electrically active oxide thickness is determined by matching of C-AFM voltage-current curves and a tunnelling current model, which is based on an analytical tunnelling current approximation. The model holds for both the Fowler-Nordheim tunnelling and the direct tunnelling regime with one single tunnelling parameter set. The results show good agreement with macroscopic measurements for gate voltages larger than approximately 0.5-1 V, and with microscopic C-AFM measurements. For this reason arbitrary oxides in the DT and the FNT regime may be analysed with high lateral resolution by C-AFM, without the need of a preselection of the tunnelling regime to be addressed

  17. Electrochemical H2O2 biosensor composed of myoglobin on MoS2 nanoparticle-graphene oxide hybrid structure.

    Science.gov (United States)

    Yoon, Jinho; Lee, Taek; Bapurao G, Bharate; Jo, Jinhee; Oh, Byung-Keun; Choi, Jeong-Woo

    2017-07-15

    In this research, the electrochemical biosensor composed of myoglobin (Mb) on molybdenum disulfide nanoparticles (MoS 2 NP) encapsulated with graphene oxide (GO) was fabricated for the detection of hydrogen peroxide (H 2 O 2 ). Hybrid structure composed of MoS 2 NP and GO (GO@MoS 2 ) was fabricated for the first time to enhance the electrochemical signal of the biosensor. As a sensing material, Mb was introduced to fabricate the biosensor for H 2 O 2 detection. Formation and immobilization of GO@MoS 2 was confirmed by transmission electron microscopy, ultraviolet-visible spectroscopy, scanning electron microscopy, and scanning tunneling microscopy. Immobilization of Mb, and electrochemical property of biosensor were investigated by cyclic voltammetry and amperometric i-t measurements. Fabricated biosensor showed the electrochemical signal enhanced redox current as -1.86μA at an oxidation potential and 1.95μA at a reduction potential that were enhanced relative to those of electrode prepared without GO@MoS 2 . Also, this biosensor showed the reproducibility of electrochemical signal, and retained the property until 9 days from fabrication. Upon addition of H 2 O 2 , the biosensor showed enhanced amperometric response current with selectivity relative to that of the biosensor prepared without GO@MoS 2 . This novel hybrid material-based biosensor can suggest a milestone in the development of a highly sensitive detecting platform for biosensor fabrication with highly sensitive detection of target molecules other than H 2 O 2 . Copyright © 2016 Elsevier B.V. All rights reserved.

  18. Cancer morbidity among polishers.

    Science.gov (United States)

    Järvholm, B; Thiringer, G; Axelson, O

    1982-01-01

    The mortality pattern among 86 men was determined to investigate the possible hazards of polishing steel. The men had polished steel with polishing paste for at least five years. The polishing pastes had contained tallow, beeswax, carnauba wax, alundum, carborundum, ferric oxide, and chalk. A total of 18 men had died compared with 13.3 expected. Four had died of stomach cancer compared with 0.44 expected (p less than 0.005). The mortality for other causes of death was not increased. The study does not permit any definite conclusion but indicates a possible cancer hazard among polishers. PMID:7066237

  19. The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

    Directory of Open Access Journals (Sweden)

    Jingyu Shen

    2018-01-01

    Full Text Available The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

  20. Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

    Science.gov (United States)

    Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Shih, Hong-An; Nakazawa, Satoshi; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2018-06-01

    The impacts of inserting ultrathin oxides into insulator/AlGaN interfaces on their electrical properties were investigated to develop advanced AlGaN/GaN metal–oxide–semiconductor (MOS) gate stacks. For this purpose, the initial thermal oxidation of AlGaN surfaces in oxygen ambient was systematically studied by synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) and atomic force microscopy (AFM). Our physical characterizations revealed that, when compared with GaN surfaces, aluminum addition promotes the initial oxidation of AlGaN surfaces at temperatures of around 400 °C, followed by smaller grain growth above 850 °C. Electrical measurements of AlGaN/GaN MOS capacitors also showed that, although excessive oxidation treatment of AlGaN surfaces over around 700 °C has an adverse effect, interface passivation with the initial oxidation of the AlGaN surfaces at temperatures ranging from 400 to 500 °C was proven to be beneficial for fabricating high-quality AlGaN/GaN MOS gate stacks.

  1. Trend and current practices of palm oil mill effluent polishing: Application of advanced oxidation processes and their future perspectives.

    Science.gov (United States)

    Bello, Mustapha Mohammed; Abdul Raman, Abdul Aziz

    2017-08-01

    Palm oil processing is a multi-stage operation which generates large amount of effluent. On average, palm oil mill effluent (POME) may contain up to 51, 000 mg/L COD, 25,000 mg/L BOD, 40,000 TS and 6000 mg/L oil and grease. Due to its potential to cause environmental pollution, palm oil mills are required to treat the effluent prior to discharge. Biological treatments using open ponding system are widely used for POME treatment. Although these processes are capable of reducing the pollutant concentrations, they require long hydraulic retention time and large space, with the effluent frequently failing to satisfy the discharge regulation. Due to more stringent environmental regulations, research interest has recently shifted to the development of polishing technologies for the biologically-treated POME. Various technologies such as advanced oxidation processes, membrane technology, adsorption and coagulation have been investigated. Among these, advanced oxidation processes have shown potentials as polishing technologies for POME. This paper offers an overview on the POME polishing technologies, with particularly emphasis on advanced oxidation processes and their prospects for large scale applications. Although there are some challenges in large scale applications of these technologies, this review offers some perspectives that could help in overcoming these challenges. Copyright © 2017 Elsevier Ltd. All rights reserved.

  2. Study of Si/Si, Si/SiO2, and metal-oxide-semiconductor (MOS) using positrons

    International Nuclear Information System (INIS)

    Leung, To Chi.

    1991-01-01

    A variable-energy positron beam is used to study Si/Si, Si/SiO 2 , and metal-oxide-semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300C) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO 2 . Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO 2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C-V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO 2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties

  3. Large-Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics

    KAUST Repository

    Dai, Zhenyu

    2017-09-08

    2D semiconductors are poised to revolutionize the future of electronics and photonics, much like transparent oxide conductors and semiconductors have revolutionized the display industry. Herein, these two types of materials are combined to realize fully transparent 2D electronic devices and circuits. Specifically, a large-area chemical vapor deposition process is developed to grow monolayer MoS2 continuous films, which are, for the first time, combined with transparent conducting oxide (TCO) contacts. Transparent conducting aluminum doped zinc oxide contacts are deposited by atomic layer deposition, with composition tuning to achieve optimal conductivity and band-offsets with MoS2. The optimized process gives fully transparent TCO/MoS2 2D electronics with average visible-range transmittance of 85%. The transistors show high mobility (4.2 cm2 V−1 s−1), fast switching speed (0.114 V dec−1), very low threshold voltage (0.69 V), and large switching ratio (4 × 108). To our knowledge, these are the lowest threshold voltage and subthreshold swing values reported for monolayer chemical vapor deposition MoS2 transistors. The transparent inverters show fast switching properties with a gain of 155 at a supply voltage of 10 V. The results demonstrate that transparent conducting oxides can be used as contact materials for 2D semiconductors, which opens new possibilities in 2D electronic and photonic applications.

  4. DNA-length-dependent quenching of fluorescently labeled iron oxide nanoparticles with gold, graphene oxide and MoS2 nanostructures.

    Science.gov (United States)

    Balcioglu, Mustafa; Rana, Muhit; Robertson, Neil; Yigit, Mehmet V

    2014-08-13

    We controlled the fluorescence emission of a fluorescently labeled iron oxide nanoparticle using three different nanomaterials with ultraefficient quenching capabilities. The control over the fluorescence emission was investigated via spacing introduced by the surface-functionalized single-stranded DNA molecules. DNA molecules were conjugated on different templates, either on the surface of the fluorescently labeled iron oxide nanoparticles or gold and nanographene oxide. The efficiency of the quenching was determined and compared with various fluorescently labeled iron oxide nanoparticle and nanoquencher combinations using DNA molecules with three different lengths. We have found that the template for DNA conjugation plays significant role on quenching the fluorescence emission of the fluorescently labeled iron oxide nanoparticles. We have observed that the size of the DNA controls the quenching efficiency when conjugated only on the fluorescently labeled iron oxide nanoparticles by setting a spacer between the surfaces and resulting change in the hydrodynamic size. The quenching efficiency with 12mer, 23mer and 36mer oligonucleotides decreased to 56%, 54% and 53% with gold nanoparticles, 58%, 38% and 32% with nanographene oxide, 46%, 38% and 35% with MoS2, respectively. On the other hand, the presence, not the size, of the DNA molecules on the other surfaces quenched the fluorescence significantly with different degrees. To understand the effect of the mobility of the DNA molecules on the nanoparticle surface, DNA molecules were attached to the surface with two different approaches. Covalently immobilized oligonucleotides decreased the quenching efficiency of nanographene oxide and gold nanoparticles to ∼22% and ∼21%, respectively, whereas noncovalently adsorbed oligonucleotides decreased it to ∼25% and ∼55%, respectively. As a result, we have found that each nanoquencher has a powerful quenching capability against a fluorescent nanoparticle, which can be

  5. MoS_2/reduced graphene oxide hybrid with CdS nanoparticles as a visible light-driven photocatalyst for the reduction of 4-nitrophenol

    International Nuclear Information System (INIS)

    Peng, Wen-chao; Chen, Ying; Li, Xiao-yan

    2016-01-01

    Highlights: • MoS_2/rGO hybrid is synthesized using a one-step hydrothermal method. • MoS_2/rGO hybrid is used as the support and cocatalyst for CdS nanoparticles. • CdS-MoS_2/rGO composite is effective photocatalyst for 4-NP reduction in visible light. • Ammonium formate is an effective sacrificial agent for 4-NP photocatalytic reduction. - Abstract: Photocatalytic reduction of nitroaromatic compounds to aromatic amines using visible light is an attractive process that utilizes sunlight as the energy source for the chemical conversions. Herewith we synthesized a composite material consisting of CdS nanoparticles grown on the surface of MoS_2/reduced graphene oxide (rGO) hybrid as a novel photocatalyst for the reduction of 4-nitrophenol (4-NP). The CdS-MoS_2/rGO composite is shown as a high-performance visible light-driven photocatalyst. Even without a noble-metal cocatalyst, the catalyst exhibited a great activity under visible light irradiation for the reduction of 4-NP to much less toxic 4-aminophenol (4-AP) with ammonium formate as the sacrificial agent. Composite CdS-0.03(MoS_2/0.01rGO) was found to be the most effective photocatalyst for 4-NP reduction. The high photocatalytic performance is apparently resulted from the synergetic functions of MoS_2 and graphene in the composite, i.e. the cocatalysts serve as both the active adsorption sites for 4-NP and electron collectors for the separation of electron-hole pairs generated by CdS nanoparticles. The laboratory results show that the CdS-MoS_2/rGO composite is a low-cost and stable photocatalyst for effective reduction and detoxification of nitroaromatic compounds using solar energy.

  6. Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

    International Nuclear Information System (INIS)

    Varzgar, John B.; Kanoun, Mehdi; Uppal, Suresh; Chattopadhyay, Sanatan; Tsang, Yuk Lun; Escobedo-Cousins, Enrique; Olsen, Sarah H.; O'Neill, Anthony; Hellstroem, Per-Erik; Edholm, Jonas; Ostling, Mikael; Lyutovich, Klara; Oehme, Michael; Kasper, Erich

    2006-01-01

    The reliability of gate oxides on bulk Si and strained Si (s-Si) has been evaluated using constant voltage stressing (CVS) to investigate their breakdown characteristics. The s-Si architectures exhibit a shorter life time compared to that of bulk Si, which is attributed to higher bulk oxide charges (Q ox ) and increased surface roughness in the s-Si structures. The gate oxide in the s-Si structure exhibits a hard breakdown (HBD) at 1.9 x 10 4 s, whereas HBD is not observed in bulk Si up to a measurement period of 1.44 x 10 5 s. The shorter lifetime of the s-Si gate oxide is attributed to a larger injected charge (Q inj ) compared to Q inj in bulk Si. Current-voltage (I-V) measurements for bulk Si samples at different stress intervals show an increase in stress induced leakage current (SILC) of two orders in the low voltage regime from zero stress time to up to 5 x 10 4 s. In contrast, superior performance enhancements in terms of drain current, maximum transconductance and effective channel mobility are observed in s-Si MOSFET devices compared to bulk Si. The results from this study indicate that further improvement in gate oxide reliability is needed to exploit the sustained performance enhancement of s-Si devices over bulk Si

  7. Highly efficient hydrogen evolution based on Ni3S4@MoS2 hybrids supported on N-doped reduced graphene oxide

    Science.gov (United States)

    Xu, Xiaobing; Zhong, Wei; Wu, Liqian; Sun, Yuan; Wang, Tingting; Wang, Yuanqi; Du, Youwei

    2018-01-01

    Hydrogen evolution reaction (HER) through water splitting at low overpotential is an appealing technology to produce renewable energy, wherein the design of stable electrocatalysts is very critical. To achieve optimal electrochemical performance, a highly efficient and stable noble-metal-free HER catalyst is synthesized by means of a facile hydrothermal co-synthesis. It consists of Ni3S4 nanosheets and MoS2 nanolayers supported on N-doped reduced graphene oxide (Ni3S4/MoS2@N-rGO). The optimized sample provides a large amount of active sites that benefit electron transfer in 3D conductive networks. Thanks to the strong synergistic effect in the catalyst network, we achieved a low overpotential of 94 mV, a small Tafel slope of 56 mV/dec and remarkable durability in an acidic medium.

  8. Enhancement of the electrical characteristics of MOS capacitors by reducing the organic content of H2O-diluted Spin-On-Glass based oxides

    International Nuclear Information System (INIS)

    Molina, Joel; Munoz, Ana; Torres, Alfonso; Landa, Mauro; Alarcon, Pablo; Escobar, Manuel

    2011-01-01

    In this work, the physical, chemical and electrical properties of Metal-Oxide-Semiconductor (MOS) capacitors with Spin-On-Glass (SOG)-based thin films as gate dielectric have been investigated. Experiments of SOG diluted with two different solvents (2-propanol and deionized water) were done in order to reduce the viscosity of the SOG solution so that thinner films (down to ∼20 nm) could be obtained and their general characteristics compared. Thin films of SOG were deposited on silicon by the sol-gel technique and they were thermally annealed using conventional oxidation furnace and Rapid Thermal Processing (RTP) systems within N 2 ambient after deposition. SOG dilution using non-organic solvents like deionized water and further annealing (at relatively high temperatures ≥450 deg. C) are important processes intended to reduce the organic content of the films. Fourier-Transform Infrared (FTIR) Spectroscopy results have shown that water-diluted SOG films have a significant reduction in their organic content after increasing annealing temperature and/or dilution percentage when compared to those of undiluted SOG films. Both current-voltage (I-V) and capacitance-voltage (C-V) measurements show better electrical characteristics for SOG-films diluted in deionized water compared to those diluted in 2-propanol (which is an organic solvent). The electrical characteristics of H 2 O-diluted SOG thin films are very similar to those obtained from high quality thermal oxides so that their application as gate dielectrics in MOS devices is promising. Finally, it has been demonstrated that by reducing the organic content of SOG-based thin films, it is possible to obtain MOS devices with better electrical properties.

  9. Ionic Liquid-Assisted Synthesis of Nanoscale (MoS2)x(SnO2)1-x on Reduced Graphene Oxide for the Electrocatalytic Hydrogen Evolution Reaction.

    Science.gov (United States)

    Ravula, Sudhir; Zhang, Chi; Essner, Jeremy B; Robertson, J David; Lin, Jian; Baker, Gary A

    2017-03-08

    Layered transition metal dichalcogenides (TMDs) have attracted increased attention due to their enhanced hydrogen evolution reaction (HER) performance. More specifically, ternary TMD nanohybrids, such as MoS 2(1-x) Se 2x or bimetallic sulfides, have arisen as promising electrocatalysts compared to MoS 2 and MoSe 2 due to their electronic, morphologic, and size tunabilities. Herein, we report the successful synthesis of few-layered MoS 2 /rGO, SnS 2 /rGO, and (MoS 2 ) x (SnO 2 ) 1-x /rGO nanohybrids anchored on reduced graphene oxide (rGO) through a facile hydrothermal reaction in the presence of ionic liquids as stabilizing, delayering agents. Spectroscopic and microscopic techniques (electron microscopy, X-ray diffraction, Raman spectroscopy, neutron activation analysis, and UV-vis spectrophotometry) are used to validate the hierarchical properties, phase identity, and the smooth compositional tunability of the (MoS 2 ) x (SnO 2 ) 1-x /rGO nanohybrids. Linear sweep voltammetry measurements reveal that incorporation of Sn into the ternary nanohybrids (as a discrete SnO 2 phase) greatly reduces the overpotential by 90-130 mV relative to the MoS 2 electrocatalyst. Significantly, the (MoS 2 ) 0.6 (SnO 2 ) 0.4 /rGO nanohybrid displays superior catalytic performance over MoS 2 alone, exhibiting a low overpotential (η 10 ) of 263 ± 5 mV and a small Tafel slope of 50.8 mV dec -1 . The hybrid catalyst shows high stability for the HER in acidic solutions, with negligible activity loss after 1000 cycles. The hierarchical structures and large surface areas possessing exposed, active edge sites make few-layered (MoS 2 ) x (SnO 2 ) 1-x /rGO nanohybrids promising nonprecious metal electrocatalysts for the HER.

  10. Removing the residual cellulase by graphene oxide to recycle the bio-polishing effluent for dyeing cotton fabrics.

    Science.gov (United States)

    Wang, Rui; Yang, Chao; Fang, Kuanjun; Cai, Yuqing; Hao, Longyun

    2018-02-01

    In this research, a stable graphene oxide (GO) suspension was prepared by chemical reduction method from graphite powder. By TEM, the irregular GO sheets with single-atom-layered structure could be observed. The zeta potentials measurement indicated the surface charges of GO were strongly related to pH. BET analysis showed the GO had a specific surface area of 30.7 m 2 /g and pore volume of 0.10 cm 3 /g. When the GO was used to remove the residual cellulase in bio-polishing effluent, it was found the removal capacity reached its maximum value at the pH 4-5. The kinetics studies showed that the removal process of cellulase followed a pseudo-second-order kinetic model with a rate constant (k 2 ) of 0.276 × 10 -3  g/mg min and equilibrium adsorption capacity of 278.55 mg/g, respectively. By plotting the adsorption isotherms, it was found the Langmuir model fitted the experimental data well with a cellulase adsorption capacity of 574.71 mg/g, indicating the adsorption of cellulase by GO in a monolayer manner. When dyeing the cotton fabrics with reactive dyes, it was found that the cotton fabrics could acquire similar color properties in the recycled bio-polishing effluent as in fresh water, meaning the effectiveness of removing cellulase by GO and the feasibility of recycling the bio-polishing effluent. Copyright © 2017 Elsevier Ltd. All rights reserved.

  11. Gamma-ray irradiation and post-irradiation at room and elevated temperature response of pMOS dosimeters with thick gate oxides

    Directory of Open Access Journals (Sweden)

    Pejović Momčilo M.

    2011-01-01

    Full Text Available Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing.

  12. MOSFET and MOS capacitor responses to ionizing radiation

    Science.gov (United States)

    Benedetto, J. M.; Boesch, H. E., Jr.

    1984-01-01

    The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

  13. Color stability of bulk-fill and incremental-fill resin-based composites polished with aluminum-oxide impregnated disks

    Directory of Open Access Journals (Sweden)

    Uzay Koc-Vural

    2017-05-01

    Full Text Available Objectives This study aimed to evaluate the color stability of bulk-fill and nanohybrid resin-based composites polished with 3 different, multistep, aluminum-oxide impregnated finishing and polishing disks. Materials and Methods Disk-shaped specimens (8 mm in diameter and 4 mm in thickness were light-cured between two glass slabs using one nanohybid bulk-fill (Tetric EvoCeram, Ivoclar Vivadent, one micro-hybrid bulk-fill (Quixfil, Dentsply, and two nanohybrid incremental-fill (Filtek Ultimate, 3M ESPE; Herculite XRV Ultra, Kerr resin-based composites, and aged by thermocycling (between 5 - 55℃, 3,000 cycles. Then, they were divided into subgroups according to the polishing procedure as SwissFlex (Coltène/Whaledent, Optidisc (Kerr, and Praxis TDV (TDV Dental (n = 12 per subgroup. One surface of each specimen was left unpolished. All specimens were immersed in coffee solution at 37℃. The color differences (ΔE were measured after 1 and 7 days of storage using a colorimeter based on CIE Lab system. The data were analyzed by univariate ANOVA, Mann-Whitney U test, and Friedmann tests (α = 0.05. Results Univariate ANOVA detected significant interactions between polishing procedure and composite resin and polishing procedure and storage time (p 0.05. Polishing reduced the discoloration resistance of Tetric EvoCeram/SwissFlex, Tetric EvoCeram/Praxis TDV, Quixfil-SwissFlex, and all Herculite XRV Ultra groups after 7 days storage (p < 0.05. Conclusions Discoloration resistance of bulk-fill resin-based composites can be significantly affected by the polishing procedures.

  14. Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides

    Science.gov (United States)

    Jiao, C.; Ahyi, A. C.; Dhar, S.; Morisette, D.; Myers-Ward, R.

    2017-04-01

    We report results on the interface trap density ( D it) of 4H- and 6H-SiC metal-oxide-semiconductor (MOS) capacitors with different interface chemistries. In addition to pure dry oxidation, we studied interfaces formed by annealing thermal oxides in NO or POCl3. The D it profiles, determined by the C- ψ s method, show that, although the as-oxidized 4H-SiC/SiO2 interface has a much higher D it profile than 6H-SiC/SiO2, after postoxidation annealing (POA), both polytypes maintain comparable D it near the conduction band edge for the gate oxides incorporated with nitrogen or phosphorus. Unlike most conventional C- V- or G- ω-based methods, the C- ψ s method is not limited by the maximum probe frequency, therefore taking into account the "fast traps" detected in previous work on 4H-SiC. The results indicate that such fast traps exist near the band edge of 6H-SiC also. For both polytypes, we show that the total interface trap density ( N it) integrated from the C- ψ s method is several times that obtained from the high-low method. The results suggest that the detected fast traps have a detrimental effect on electron transport in metal-oxide-semiconductor field-effect transistor (MOSFET) channels.

  15. Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C-SiC nanocrystals in the oxide

    International Nuclear Information System (INIS)

    Pongracz, A.; Battistig, G.; Duecso, Cs.; Josepovits, K.V.; Deak, P.

    2007-01-01

    Our group previously proved that a simple reactive annealing in CO containing gas produces 3C-SiC nanocrystals, which are epitaxially and void-free aligned in the Si substrate. By a further thermal oxidation step, these nanocrystals can be lifted from the Si and incorporated into the SiO 2 matrix, thereby creating a promising structure for charge storage. In this work the structural and electrical properties of such systems with nanocrystalline SiC will be presented. Prototype MOS structures with 3C-SiC nanocrystals were produced for current-voltage and capacitance-voltage measurements. The results indicate that the high-temperature annealing did not damage the MOS structure, despite the fact that the CO annealing changed the electrical properties of the system. There was a positive charge accumulation and a reversible carrier injection observed in the structure. We assume that the positive charges originated from oxygen vacancies and the charge injection is related to the presence of SiC nanocrystals

  16. Effects of layer sequence and postdeposition annealing temperature on performance of La2O3 and HfO2 multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application

    Science.gov (United States)

    Wu, Wen-Hao; Lin, Yueh-Chin; Chuang, Ting-Wei; Chen, Yu-Chen; Hou, Tzu-Ching; Yao, Jing-Neng; Chang, Po-Chun; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2014-03-01

    In this paper, we report on high-k composite oxides that are formed by depositing multiple layers of HfO2 and La2O3 on In0.53Ga0.47As for MOS device application. Both multilayer HfO2 (0.8 nm)/La2O3 (0.8 nm)/In0.53Ga0.47As and La2O3 (0.8 nm)/HfO2 (0.8 nm)/In0.53Ga0.47As MOS structures were investigated. The effects of oxide thickness and postdeposition annealing (PDA) temperature on the interface properties of the composite oxide MOS capacitors were studied. It was found that a low CET of 1.41 nm at 1 kHz was achieved using three-layer composite oxides. On the other hand, a small frequency dispersion of 2.8% and an excellent Dit of 7.0 × 1011 cm-2·eV-1 can be achieved using multiple layers of La2O3 (0.8 nm) and HfO2 (0.8 nm) on the In0.53Ga0.47As MOS capacitor with optimum thermal treatment and layer thickness.

  17. A Study on N{sub 2}O Direct Oxidation Process with Re-oxidation Annealing for the Improvement of Interface Properties in 4H-SiC MOS Capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Doohyung; Park, Kunsik; Yoo, Seongwook; Kim, Sanggi; Lee, Jinhwan; Kim, Kwangsoo [Electronics and Telecommunications Research Institute (ETRI), Daejeon (Korea, Republic of)

    2017-08-15

    The effect of N{sub 2}O direct oxidation processes with re-oxidation on SiC/SiO{sub 2} interface characteristics has been investigated. With different oxidation and post oxidation annealing (POA) processes, the flat-band voltage, effective dielectric charge density, and interface trap density are obtained from the capacitance-voltage curves. For the proposed N{sub 2}O direct oxidation processes with re-oxidation, oxides were grown in N{sub 2}O ambient, diluted in high-purity N{sub 2} to 10% concentration, for 5 h at 1230 ℃. After the growth, some samples were annealed additionally at 1200 ℃ in O{sub 2} or H{sub 2}O for 20 min. N{sub 2}O direct oxidation with re-oxidation processes was confirmed that SiC/SiO{sub 2} interface properties and dielectric stability have better performance than with other conventional oxidation processes. This oxidation technique is expected to improve gate dielectric stability for application to SiC MOS devices; in particular, it can be used to obtain high-quality SiC/SiO{sub 2} interface properties.

  18. Dosimetric properties of MOS transistors

    International Nuclear Information System (INIS)

    Frank, H.; Petr, I.

    1977-01-01

    The structure of MOS transistors is described and their characteristics given. The experiments performed and data in the literature show the following dosimetric properties of MOS transistors: while for low gamma doses the transistor response to exposure is linear, it shows saturation for higher doses (exceeding 10 3 Gy in tissue). The response is independent of the energy of radiation and of the dose rate (within 10 -2 to 10 5 Gy/s). The spontaneous reduction with time of the spatial charge captured by the oxide layer (fading) is small and acceptable from the point of view of dosimetry. Curves are given of isochronous annealing of the transistors following irradiation with 137 Cs and 18 MeV electrons for different voltages during irradiation. The curves show that in MOS transistors irradiated with high-energy electrons the effect of annealing is less than in transistors irradiated with 137 Cs. In view of the requirement of using higher temperatures (approx. 400 degC) for the complete ''erasing'' of the captured charge, unsealed systems must be used for dosimetric purposes. The effect was also studied of neutron radiation, proton radiation and electron radiation on the MOS transistor structure. For MOS transistor irradiation with 14 MeV neutrons from a neutron generator the response was 4% of that for gamma radiation at the same dose equivalent. The effect of proton radiation was studied as related to the changes in MOS transistor structure during space flights. The response curve shapes are similar to those of gamma radiation curves. The effect of electron radiation on the MOS structure was studied by many authors. The experiments show that for each thickness of the SiO 2 layer an electron energy exists at which the size of the charge captured in SiO 2 is the greatest. All data show that MOS transistors are promising for radiation dosimetry. The main advantage of MOS transistors as gamma dosemeters is the ease and speed of evaluation, low sensitivity to neutron

  19. Simple fabrication of reduced graphene oxide -few layer MoS2 nanocomposite for enhanced electrochemical performance in supercapacitors and water purification

    Science.gov (United States)

    Raghu, M. S.; Yogesh Kumar, K.; Rao, Srilatha; Aravinda, T.; Sharma, S. C.; Prashanth, M. K.

    2018-05-01

    Expelling of heavy metal ions into water resource systems is extremely hazardous to the environment. Adsorption is one of the most cost effective and potential methods to remove the heavy metal ions from the effluents. Therefore, an attempt has been made to study the adsorption of metal particles of Cd and Hg from aqueous solution by using reduced graphene oxide-molybdenum disulphide (rGO-MoS2) nanocomposites as adsorbents. The rGO-MoS2 composites were synthesized by following simple physical methods; which involve the mixing of dispersions of MoS2 and graphene oxide (GO) by sonication, followed by subsequent reduction with hydrazine hydrate. Characterization of the nanocomposites was performed by FESEM, TEM, EDAX, raman spectroscopy, XRD and BET surface area analysis. Electron microscopic images validate the presence of homogeneity in the synthesized nanocomposite. Batch adsorption experiments were used to scrutinizethe effect of an array of parameters like effect of pH, initial concentration of the metal ions, adsorbent dose, and contact time on the adsorption capacity of metal ions on rGO-MoS2 nanocomposites. The thorough examination of adsorbed isotherm and energy demonstrates the best fitting of the adsorption data with the 'Langmuir adsorption isotherm model' and follows the pseudo-second-order kinetic in active condition. The synthesized materials havealso been tested against Gram-positive and Gram-negative bacterial strains and have showcased promising antimicrobial activities. At the same time, the nanocomposites were evaluated for electrochemical performance in supercapacitors. The rGO-MoS2 nanocomposite demonstrates better capacitance (440 Fg-1) at 5 mvs-1 scan rate. The inimitable surface property of MoS2 and good electrical conductivity of rGO results show versatile usage and formidable performance as an adsorbent, antibacterial agent and electrode material for supercapacitors.

  20. Application of MOS structures to gamma dosimetry

    International Nuclear Information System (INIS)

    Frank, H.

    1978-01-01

    Lattice disorders induced in SiO 2 layers by irradiation are described, and the possibility of using MOS transistors for gamma dosimetry is discussed. Furthermore, experimental results are given for Czechoslovakian MOS transistors of MH 2009 type after gamma irradiation. Reference measurements with other irradiation sources have shown that the transistors respond only to those types of radiation which induce space charges in the oxide layer. They are, therefore, insensitive to neutrons and thus in contrast to dosimetric silicon diodes. Circuitry, sensitivity, and fading of MOS transistors are given, and a physical functional model is compared with the experimental results. (author)

  1. Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation

    Science.gov (United States)

    Jayawardena, Asanka; Shen, X.; Mooney, P. M.; Dhar, Sarit

    2018-06-01

    Interfacial charge trapping in 4H–SiC MOS capacitors with P doped SiO2 or phospho-silicate glass (PSG) as a gate dielectric has been investigated with temperature dependent capacitance–voltage measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements. The measurements indicate that P doping in the dielectric results in significant reduction of near-interface electron traps that have energy levels within 0.5 eV of the 4H–SiC conduction band edge. Extracted trap densities confirm that the phosphorus induced near-interface trap reduction is significantly more effective than interfacial nitridation, which is typically used for 4H–SiC MOSFET processing. The CCDLTS measurements reveal that the two broad near-interface trap peaks, named ‘O1’ and ‘O2’, with activation energies around 0.15 eV and 0.4 eV below the 4H–SiC conduction band that are typically observed in thermal oxides on 4H–SiC, are also present in PSG devices. Previous atomic scale ab initio calculations suggested these O1 and O2 traps to be carbon dimers substituted for oxygen dimers (CO=CO) and interstitial Si (Sii) in SiO2, respectively. Theoretical considerations in this work suggest that the presence of P in the near-interfacial region reduces the stability of the CO=CO defects and reduces the density of Sii defects through the network restructuring. Qualitative comparison of results in this work and reported work suggest that the O1 and O2 traps in SiO2/4H–SiC MOS system negatively impact channel mobility in 4H–SiC MOSFETs.

  2. MOS integrated circuit design

    CERN Document Server

    Wolfendale, E

    2013-01-01

    MOS Integral Circuit Design aims to help in the design of integrated circuits, especially large-scale ones, using MOS Technology through teaching of techniques, practical applications, and examples. The book covers topics such as design equation and process parameters; MOS static and dynamic circuits; logic design techniques, system partitioning, and layout techniques. Also featured are computer aids such as logic simulation and mask layout, as well as examples on simple MOS design. The text is recommended for electrical engineers who would like to know how to use MOS for integral circuit desi

  3. Electro persulphate oxidation for polishing of biologically treated palm oil mill effluent (POME).

    Science.gov (United States)

    Bashir, Mohammed J K; Wei, Chong Jia; Aun, Ng Choon; Abu Amr, Salem S

    2017-05-15

    Malaysia alone produces more than 49 million m 3 palm oil mill effluent per year. Biological treated palm oil mill effluent via ponding system often fails to fulfill the regulatory discharge standards. This is due to remaining of non-biodegradable organics in the treated effluent. Thus, the aim of this study was to resolve such issue by using electro persulphate oxidation process, for the first time, as a post treatment of palm oil mill effluent. Central composite design in response surface methodology was used to analyze and optimize the interaction of operational variables (i.e., current density, contact time, initial pH and persulphate dosage) targeted on maximum treatment efficiency. The significance of quadratic model of each response was determined by analysis of variance, where all models indicated sufficient significance with p-value < 0.0001. Optimum operational conditions with 45 mA/cm 2 of current density, 45 min of contact time, pH 4 and 0.892 g of S 2 O 8 2- proved that 77.70% of Chemical Oxygen Demand, 97.96% of colour as well as 99.72% of Suspended Solids removal were achieved. The final pH of 5.88 of the effluent was obtained that fulfilled the limit and suitable for direct discharge to the natural environment. Copyright © 2017 Elsevier Ltd. All rights reserved.

  4. Radiation hardening of MOS devices by boron

    International Nuclear Information System (INIS)

    Danchenko, V.

    1975-01-01

    A novel technique is disclosed for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device of the type having a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. In the preferred embodiment, the novel inventive technique contemplates the introduction of boron into the insulating oxide, the boron being introduced within a layer of the oxide of about 100A to 300A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 atoms/ cm 3 . The novel technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations, which accumulations, if not eliminated, would cause shifting of the gate threshold potential of a radiation subjected MOS device, and thus render the device unstable and/or inoperative. (auth)

  5. Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Yifan; Lv, Hongliang [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Song, Qingwen, E-mail: qwsong@xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071 (China); Tang, Xiaoyan, E-mail: xytang@xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Xiao, Li; Wang, Liangyong; Tang, Guangming [Zhongxing Telecommunication Equipment Corporation, Shenzhen 518057 (China); Zhang, Yimen; Zhang, Yuming [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China)

    2017-03-01

    Highlights: • Effect of oxidation temperature on interfacial properties of SiO{sub 2}/SiC is investigated. • Raising the oxidation temperature effectively decreases the density of NITs and N{sub eff}. • The higher oxidation temperature reduces the surface RMS roughness of the grow SiO{sub 2}. • SIMS and XPS results reveal the improvement mechanism of high temperature oxidation. - Abstract: The effect of oxidation temperature on interfacial properties of n-type 4H-SiC metal-oxide-semiconductor capacitors has been systematically investigated. Thermal dry oxidation process with three different oxidation temperatures 1200 °C, 1300 °C and 1350 °C were employed to grow SiO{sub 2} dielectric, following by the standard post-oxidation annealing (POA) in NO ambience at 1175 °C for 2 h. The root mean square (RMS) roughness measured by Atomic Force Microscopy for the thermally grown SiO{sub 2} before POA process is reduced with increasing the oxidation temperature, obtaining an atomically flat surface with a RMS of 0.157 nm from the sample oxidized at 1350 °C. Several kinds of electrical measurements were used to evaluate the densities of near interface traps and effective fixed dielectric charge for the samples, exhibiting a trend reduced with increasing the oxidation temperature. The interface state density of 3 × 10{sup 11} cm{sup −2}eV{sup −1} at 0.2 eV from the conduction band edge was achieved from conductance method measurement for the sample oxidized at 1350 °C. The results from Secondary Ion Mass Spectroscopy and X-ray Photoelectron Spectroscopy demonstrate that high oxidation temperature can reduce the width of transition layer, the excess Si and silicon suboxide compositions near the interface, leading to effective improvement of the interfacial properties.

  6. Fractal dimension determined through optical and scanning electron microscopy on FeCrAl alloy after polishing, erosion, and oxidizing processes

    Energy Technology Data Exchange (ETDEWEB)

    Guzman-Castaneda, J.I.; Garcia-Borquez, A. [Instituto Politecnico Nacional, ESFM, 07738 Mexico D.F. (Mexico); Arizabalo-Salas, R.D. [Instituto Mexicano del Petroleo, Direccion de Investigacion y Posgrado, 07730 Mexico D.F. (Mexico)

    2012-06-15

    Optical and scanning electron microscopy (OM and SEM) are techniques that are normally used for 2D-analysis of surface features. By fractal dimension analysis of the gray-scale OM and SEM images, it is possible to get quantitative topographical measurements. In this work, three different surface topographies (polished, eroded, and oxidized) were analyzed on FeCrAl alloy by OM and SEM. Clear surface topographical changes can be qualitatively observed. In order to quantify such changes, two steps were followed: (i) a gray-scale digitalization from each image was used to reproduce topographical features on the analyzed surface, and (ii) from this information, the fractal dimension (D) was determined using fractal3e software. The fractal dimension determined in this form follows coherently the topographical changes produced on the FeCrAl alloy after polishing, erosion, and oxidizing processes. The variations of fractal dimension values against the temperature of the oxidizing processes reflect well the oxide growth changes. Moreover, a minimum D-value is registered at 750 C, which corresponds to the {delta}-{theta} alumina phase transition temperature as determined by differential thermal analysis (DTA) on the same alloy. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Impact of Reduced Graphene Oxide on MoS2 Grown by Sulfurization of Sputtered MoO3 and Mo Precursor Films (Postprint)

    Science.gov (United States)

    2016-05-26

    1,2 intercalation assisted exfoliation,8–11 physical vapor deposition (PVD),12,13 and a wet chemistry approach involving thermal decomposition of a... annealed MoO3, MoS2 films S1 (MoS2 using Mo precursor), S2 (MoS2 using MoO3 precursor), S1r (MoS2 using Mo pre- cursor and rGO), and S2r (MoS2 using...MoO3 precursor and rGO). The annealed MoO3 (a) shows Mo(IV) peaks which are indicative of MoO2, and Mo(VI) peaks that occur when MoO3 is present. Both

  8. Electrical characteristics of AlO{sub x}N{sub y} prepared by oxidation of sub-10-nm-thick AlN films for MOS gate dielectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Sang Hun; Jang, Hyeon Woo; Kim, Hyun Soo; Noh, Do Young; Hwang, Hyun Sang [Kwangju Institute of Science and Technology, Kwangju (Korea, Republic of)

    2000-12-01

    In this research, the feasibility of ultrathin AlO{sub x}N{sub y} prepared by oxidation of sub 100-A-thick AlN thin films for metal-oxide-semiconductor (MOS) gate dielectric applications was investigated. Oxidation of 51-A-and 98-A-thick as-deposited AlN at 800 .deg. C was used to form 72-A-and 130-A-thick AlO{sub x}N{sub y}, respectively. Based on the capacitance-voltage (C-V) measurements of the MOS capacitor, the dielectric constants of 72 A-thick and 130 A-thick Al-oxynitride were 5.15 and 7, respectively. The leakage current of Al-oxynitride at low field was almost the same as that of thermal SiO{sub 2}. based on the CV data, the interface state density of Al-oxynitride was relatively higher than that of SiO{sub 2}. Although process optimization is still necessary, the Al-oxynitride exhibits some possibility for future MOS gate dielectric applications.

  9. Electrical characteristics of AlO sub x N sub y prepared by oxidation of sub-10-nm-thick AlN films for MOS gate dielectric applications

    CERN Document Server

    Jeon, S H; Kim, H S; Noh, D Y; Hwang, H S

    2000-01-01

    In this research, the feasibility of ultrathin AlO sub x N sub y prepared by oxidation of sub 100-A-thick AlN thin films for metal-oxide-semiconductor (MOS) gate dielectric applications was investigated. Oxidation of 51-A-and 98-A-thick as-deposited AlN at 800 .deg. C was used to form 72-A-and 130-A-thick AlO sub x N sub y , respectively. Based on the capacitance-voltage (C-V) measurements of the MOS capacitor, the dielectric constants of 72 A-thick and 130 A-thick Al-oxynitride were 5.15 and 7, respectively. The leakage current of Al-oxynitride at low field was almost the same as that of thermal SiO sub 2. based on the CV data, the interface state density of Al-oxynitride was relatively higher than that of SiO sub 2. Although process optimization is still necessary, the Al-oxynitride exhibits some possibility for future MOS gate dielectric applications.

  10. Polish visit

    CERN Document Server

    2003-01-01

    On 6 October, Professor Michal Kleiber, Polish Minister of Science and Chairman of the State Committee for Scientific Research, visited CERN and met both the current and designated Director General, Luciano Maiani and Robert Aymar. Professor Kleiber visited the CMS and ATLAS detector assembly halls, the underground cavern for ATLAS, and the LHC superconducting magnet string test hall. Michal Kleiber (left), Polish minister of science and Jan Krolikowski, scientist at Warsaw University and working for CMS, who shows the prototypes of the Muon Trigger board of CMS.

  11. Dye sensitized photoelectrochemical immunosensor for the tumor marker CEA by using a flower-like 3D architecture prepared from graphene oxide and MoS2.

    Science.gov (United States)

    Song, Kaijing; Ding, Chuanmin; Zhang, Bing; Chang, Honghong; Zhao, Zhihuan; Wei, Wenlong; Wang, Junwen

    2018-06-01

    The authors describe a dye-sensitized photoelectrochemical immunoassay for the tumor marker carcinoembryonic antigen (CEA). The method employs the rhodamine dye Rh123 with red color and absorption maximum at 500 nm for spectral sensitization, and a 3D nanocomposite prepared from graphene oxide and MoS 2 acting as the photoelectric conversion layer. The nanocomposite with flower-like 3D architectures was characterized by transmission electron microscopy, scanning electron microscopy, X-ray powder diffraction, and UV-vis diffuse reflectometry. A photoelectrochemical sandwich immunoassay was developed that is based on the use of the nanocomposite and based on the specific binding of antibody and antigen, and by using a secondary antibody labeled with Rh123 and CdS (Ab 2 -Rh123@CdS). Under optimal conditions and at a typical working voltage of 0 V (vs. Hg/HgCl 2 ), the photocurrent increases linearly 10 pg mL -1 to 80 ng mL -1 CEA concentration range, with a 3.2 pg mL -1 detection limit. Graphical abstract Flower-like GO-MoS 2 complex with high efficiency of electron transport was synthesized to construct photoelectrochemical platform. The sandwich-type immunoassay was built on this platform based on specific binding of antigen and antibody. Carcinoembryonic antigen in sample was detected sensitively by using sensitization of rhodamine dye Rh123 as signal amplification strategy.

  12. Faceted MoS2 nanotubes and nanoflowers

    International Nuclear Information System (INIS)

    Deepak, Francis Leonard; Mayoral, Alvaro; Yacaman, Miguel Jose

    2009-01-01

    A simple synthesis of novel faceted MoS 2 nanotubes (NTs) and nanoflowers (NFs) starting from molybdenum oxide and thiourea as the sulphur source is reported. The MoS 2 nanotubes with the faceted morphology have not been observed before. Further the as-synthesized MoS 2 nanotubes have high internal surface area. The nanostructures have been characterized by a variety of electron microscopy techniques. It is expected that these MoS 2 nanostrutures will find important applications in energy storage, catalysis and field emission.

  13. Analysis of device parameters for Au/tin oxide/n-Si(1 0 0) metal–oxide–semiconductor (MOS) diodes

    Energy Technology Data Exchange (ETDEWEB)

    Barış, Behzad, E-mail: behzadbaris@gmail.com

    2014-04-01

    In present paper, the device parameters of tin oxide/n-Si(1 0 0) structure have been determined by means of capacitance–voltage (C–V) and conductance–voltage (G–V) measurements between 500 Hz and 1 MHz and current–voltage (I–V) measurements between −2 and +3 V at 300 K. This device has denoted good rectifying behavior and the I–V data could be described by thermionic emission (TE) technique. The values of ideality factor (n) and barrier height (Φ{sub B}) for the sample have been determined to be 3.724 and 0.624 eV, respectively. The measured values of capacitance and conductance for the series resistance under all the biases have been corrected influence to calculate the real values of capacitance and conductance. The frequency dependence of the capacitance may be attributed to trapping states. Interface trap states of the MOS device increased by decreasing the frequency and were calculated as 1.12×10{sup 11} and 6.62×10{sup 11} eV{sup −1} cm{sup −2} for 1 MHz and 100 kHz, respectively. Several important device parameters such as barrier height (Φ{sub B}), fermi energy (E{sub F}), diffusion voltage (V{sub D}), donor carrier concentration (N{sub D}) and space charge layer width (W{sub D}) for the device have been obtained between 100 kHz and 1 MHz.

  14. Effects of post-stress hydrogen annealing on MOS oxides after 60Co irradiation or Fowler-Nordheim injection

    International Nuclear Information System (INIS)

    Saks, N.S.; Stahlbush, R.E.; Mrstik, B.J.; Rendell, R.W.; Klein, R.B.

    1993-01-01

    Changes in interface trap density D it have been determined in MOSFETs as a function of time during hydrogen annealing at 295K. Large increases in D it are observed during H 2 annealing in MOSFETs previously stressed by either 60 Co irradiation or Fowler-Nordheim electron injection. The annealing behavior is very similar for both types of stress, which suggests that the D it creation mechanism involves similar chemistry for hydrogen reactions. Studies of the time dependence of D it creation as a function of MOSFET gate length show that the time dependence is limited primarily by lateral diffusion of molecular hydrogen (H 2 ) through the gate oxide. An activation energy of 0.57 eV, which is consistent with H 2 diffusion, is obtained from the temperature dependence

  15. Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

    NARCIS (Netherlands)

    Nishiguchi, K.; Castellanos-Gomez, A.; Yamaguchi, H.; Fujiwara, A.; Van der Zant, H.S.J.; Steele, G.A.

    2015-01-01

    We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and

  16. Functional Median Polish

    KAUST Repository

    Sun, Ying; Genton, Marc G.

    2012-01-01

    polish is demonstrated by comparing its performance with the traditional functional ANOVA fitted by means under different outlier models in simulation studies. The functional median polish is illustrated on various applications in climate science

  17. Fast and slow border traps in MOS devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.

    1996-01-01

    Convergent lines of evidence are reviewed which show that near-interfacial oxide traps (border traps) that exchange charge with the Si can strongly affect the performance, radiation response, and long-term reliability of MOS devices. Observable effects of border traps include capacitance-voltage (C-V) hysteresis, enhanced l/f noise, compensation of trapped holes, and increased thermally stimulated current in MOS capacitors. Effects of faster (switching times between ∼10 -6 s and ∼1 s) and slower (switching times greater than ∼1 s) border traps have been resolved via a dual-transistor technique. In conjunction with studies of MOS electrical response, electron paramagnetic resonance and spin dependent recombination studies suggest that E' defects (trivalent Si centers in SiO 2 associated with O vacancies) can function as border traps in MOS devices exposed to ionizing radiation or high-field stress. Hydrogen-related centers may also be border traps

  18. Interfacial chemical reactions between MoS2 lubricants and bearing materials

    Science.gov (United States)

    Zabinski, J. S.; Tatarchuk, B. J.

    1989-01-01

    XPS and conversion-electron Moessbauer spectroscopy (CEMS) were used to examine iron that was deposited on the basal plane of MoS2 single crystals and subjected to vacuum annealing, oxidizing, and reducing environments. Iron either intercalated into the MoS2 structure or formed oriented iron sulfides, depending on the level of excess S in the MoS2 structure. CEMS data demonstrated that iron sulfide crystal structures preferentially aligned with respect to the MoS2 basal plane, and that alignment (and potentially adhesion) could be varied by appropriate high-temperature annealing procedures.

  19. Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor

    Science.gov (United States)

    Wu, Di; Lou, Zhenhua; Wang, Yuange; Xu, Tingting; Shi, Zhifeng; Xu, Junmin; Tian, Yongtao; Li, Xinjian

    2017-10-01

    Few-layer MoS2 thin films were synthesized by a two-step thermal decomposition process. In addition, MoS2/Si nanowire array (SiNWA) heterojunctions exhibiting excellent gas sensing properties were constructed and investigated. Further analysis reveals that such MoS2/SiNWA heterojunction devices are highly sensitive to nitric oxide (NO) gas under reverse voltages at room temperature (RT). The gas sensor demonstrated a minimum detection limit of 10 ppb, which represents the lowest value obtained for MoS2-based sensors, as well as an ultrahigh response of 3518% (50 ppm NO, ˜50% RH), with good repeatability and selectivity of the MoS2/SiNWA heterojunction. The sensing mechanisms were also discussed. The performance of the MoS2/SiNWA heterojunction gas sensors is superior to previous results, revealing that they have great potential in applications relating to highly sensitive gas sensors.

  20. Oxidation study of the synthetic sulfides molybdenite (MoS2) and covellite (CuS) by acidithiobacillus ferrooxidants using respirometric experiments

    International Nuclear Information System (INIS)

    Francisco Junior, Wilmo E.; Universidade Estadual Paulista; Bevilaqua, Denise; Garcia Junior, Oswaldo

    2009-01-01

    This paper analyses the oxidation of covellite and molybdenite by Acidithiobacillus ferrooxidans strain LR using respirometric experiments. The results showed that both sulfides were oxidized by A. ferrooxidans, however, the covellite oxidation was much higher than molybdenite. Regarding the kinetic oxidation, the findings revealed that just molybdenite oxidation followed the classical Michaelis-Menten kinetic. It is probably associated with the pathway which these sulfides react to chemistry-bacterial attack, what is influenced by its electronic structures. Besides, experiments conducted in the presence of Fe 3+ did not indicate alterations in molybdenite oxidation. Thus, ferric ions seem not to be essential to the sulfide oxidations. (author)

  1. Effects of series and parallel resistances on the C-V characteristics of silicon-based metal oxide semiconductor (MOS) devices

    Science.gov (United States)

    Omar, Rejaiba; Mohamed, Ben Amar; Adel, Matoussi

    2015-04-01

    This paper investigates the electrical behavior of the Al/SiO2/Si MOS structure. We have used the complex admittance method to develop an analytical model of total capacitance applied to our proposed equivalent circuit. The charge density, surface potential, semiconductor capacitance, flatband and threshold voltages have been determined by resolving the Poisson transport equations. This modeling is used to predict in particular the effects of frequency, parallel and series resistance on the capacitance-voltage characteristic. Results show that the variation of both frequency and parallel resistance causes strong dispersion of the C-V curves in the inversion regime. It also reveals that the series resistance influences the shape of C-V curves essentially in accumulation and inversion modes. A significant decrease of the accumulation capacitance is observed when R s increases in the range 200-50000 Ω. The degradation of the C-V magnitude is found to be more pronounced when the series resistance depends on the substrate doping density. When R s varies in the range 100 Ω-50 kΩ, it shows a decrease in the flatband voltage from -1.40 to -1.26 V and an increase in the threshold voltage negatively from -0.28 to -0.74 V, respectively. Good agreement has been observed between simulated and measured C-V curves obtained at high frequency. This study is necessary to control the adverse effects that disrupt the operation of the MOS structure in different regimes and optimizes the efficiency of such electronic device before manufacturing.

  2. Impact of technology scaling in SOI back-channel total dose tolerance. A 2-D numerical study using a self-consistent oxide code; Effet du facteur d'echelle sur la tolerance en dose de rayonnement dans le cas du courant de fuite arriere des transistors MOS/SOI. Une etude d'un oxyde utilise un code auto coherent en deux dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Leray, J.L.; Paillet, Ph.; Ferlet-Cavrois, V. [CEA Bruyeres le Chatel DRIF, 91 (France); Tavernier, C.; Belhaddad, K. [ISE Integrated System Engineering AG (Switzerland); Penzin, O. [ISE Integrated System Engineering Inc., San Jose (United States)

    1999-07-01

    A new 2-D and 3-D self-consistent code has been developed and is applied to understanding the charge trapping in SOI buried oxide causing back-channel MOS leakage in SOI transistors. Clear indications on scaling trends are obtained with respect to supply voltage and oxide thickness. (authors)

  3. Ultralarge area MOS tunnel devices for electron emission

    DEFF Research Database (Denmark)

    Thomsen, Lasse Bjørchmar; Nielsen, Gunver; Vendelbo, Søren Bastholm

    2007-01-01

    density. Oxide thicknesses have been extracted by fitting a model based on Fermi-Dirac statistics to the C-V characteristics. By plotting I-V characteristics in a Fowler plot, a measure of the thickness of the oxide can be extracted from the tunnel current. These apparent thicknesses show a high degree......A comparative analysis of metal-oxide-semiconductor (MOS) capacitors by capacitance-voltage (C-V) and current-voltage (I-V) characteristics has been employed to characterize the thickness variations of the oxide on different length scales. Ultralarge area (1 cm(2)) ultrathin (similar to 5 nm oxide......) MOS capacitors have been fabricated to investigate their functionality and the variations in oxide thickness, with the use as future electron emission devices as the goal. I-V characteristics show very low leakage current and excellent agreement to the Fowler-Nordheim expression for the current...

  4. Microbiological oxidative dissolution of a complex mineral sample containing pyrite (FeS2), pyrrotite (Fe1-xS) and molybdenite (MoS2)

    International Nuclear Information System (INIS)

    Francisco Junior, Wilmo E.; Bevilaqua, Denise; Garcia Junior, Oswaldo

    2007-01-01

    This work aims to study the oxidation of a complex molybdenite mineral which contains pyrite and pyrrotite, by Acidithiobacillus ferroxidans. This study was performed by respirometric essays and bioleaching in shake flasks. Respirometric essays yielded the kinetics of mineral oxidation. The findings showed that sulfide oxidation followed classical Michaelis-Menten kinetics. Bioleaching in shake flasks allowed evaluation of chemical and mineralogical changes resulting from sulfide oxidation. The results demonstrated that pyrrotite and pyrite were completely oxidized in A. ferrooxidans cultures whereas molybdenite was not consumed. These data indicated that molybdenite was the most recalcitrant sulfide in the sample. (author)

  5. Breakdown properties of irradiated MOS capacitors

    International Nuclear Information System (INIS)

    Paccagnella, A.; Candelori, A.; Pellizzer, F.; Fuochi, P.G.; Lavale, M.

    1996-01-01

    The authors have studied the effects of ionizing and non-ionizing radiation on the breakdown properties of different types of MOS capacitors, with thick (200 nm) and thin (down to 8 nm) oxides. In general, no large variations of the average breakdown field, time-to-breakdown at constant voltage, or charge-to-breakdown at constant voltage, or charge-to-breakdown values have been observed after high dose irradiation (20 Mrad(Si) 9 MeV electrons on thin and thick oxides, 17(Si) Mrad Co 60 gamma and 10 14 neutrons/cm 2 only on thick oxides). However, some modifications of the cumulative failure distributions have been observed in few of the oxides tested

  6. Health Information in Polish (polski)

    Science.gov (United States)

    ... Tools You Are Here: Home → Multiple Languages → Polish (polski) URL of this page: https://medlineplus.gov/languages/polish.html Health Information in Polish (polski) To use the sharing features on this page, ...

  7. A Facile Strategy for the Preparation of MoS3 and its Application as a Negative Electrode for Supercapacitors.

    Science.gov (United States)

    Zhang, Tong; Kong, Ling-Bin; Dai, Yan-Hua; Yan, Kun; Shi, Ming; Liu, Mao-Cheng; Luo, Yong-Chun; Kang, Long

    2016-09-06

    Owing to their graphene-like structure and available oxidation valence states, transition metal sulfides are promising candidates for supercapacitors. Herein, we report the application of MoS3 as a new negative electrode for supercapacitors. MoS3 was fabricated by the facile thermal decomposition of a (NH4 )2 MoS4 precursor. For comparison, samples of MoS3 &MoS2 and MoS2 were also synthesized by using the same method. Moreover, this is the first report of the application of MoS3 as a negative electrode for supercapacitors. MoS3 displayed a high specific capacitance of 455.6 F g(-1) at a current density of 0.5 A g(-1) . The capacitance retention of the MoS3 electrode was 92 % after 1500 cycles, and even 71 % after 5000 cycles. In addition, an asymmetric supercapacitor assembly of MoS3 as the negative electrode demonstrated a high energy density at a high potential of 2.0 V in aqueous electrolyte. These notable results show that MoS3 has significant potential in energy-storage devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Polish Cartographical Review

    Directory of Open Access Journals (Sweden)

    Nedjeljko Frančula

    2017-07-01

    Full Text Available The Polish Cartographical Review (PCR journal has been published in English four times a year since 2015. The journal is in open access and it is published by De Gruyter Open. It is edited by Polish scientists in collaboration with international experts.

  9. Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Shaneyfelt, M.R.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

    1998-02-01

    Capacitance-voltage and thermally-stimulated-current techniques are used to estimate trapped hole and electron densities in MOS oxides as functions of irradiation and isochronal anneal temperature. Trapped-charge annealing and compensation effects are discussed

  10. Elastic emission polishing

    Energy Technology Data Exchange (ETDEWEB)

    Loewenthal, M.; Loseke, K.; Dow, T.A.; Scattergood, R.O.

    1988-12-01

    Elastic emission polishing, also called elastic emission machining (EEM), is a process where a stream of abrasive slurry is used to remove material from a substrate and produce damage free surfaces with controlled surface form. It is a noncontacting method utilizing a thick elasto-hydrodynamic film formed between a soft rotating ball and the workpiece to control the flow of the abrasive. An apparatus was built in the Center, which consists of a stationary spindle, a two-axis table for the workpiece, and a pump to circulate the working fluid. The process is controlled by a programmable computer numerical controller (CNC), which presently can operate the spindle speed and movement of the workpiece in one axis only. This apparatus has been used to determine material removal rates on different material samples as a function of time, utilizing zirconium oxide (ZrO{sub 2}) particles suspended in distilled water as the working fluid. By continuing a study of removal rates the process should become predictable, and thus create a new, effective, yet simple tool for ultra-precision mechanical machining of surfaces.

  11. One-pot synthesis of MoS2/In2S3 ultrathin nanoflakes with mesh-shaped structure on indium tin oxide as photocathode for enhanced photo-and electrochemical hydrogen evolution reaction

    Science.gov (United States)

    Sun, Baoliang; Shan, Fei; Jiang, Xinxin; Ji, Jing; Wang, Feng

    2018-03-01

    A bifunctional MoS2/In2S3 hybrid composite that has both photo- and electrocatalytic activity toward hydrogen evolution reaction (HER) is prepared by a facile one pot hydrothermal method. The characterizations by scanning electron microscope (SEM), high resolution transmission electron microscope (HRTEM) and Photoluminescence (PL) shows that the MoS2/In2S3 hybrid exhibits ultrathin nanoflakes with mesh-shaped structure on transparent conductive substrates, and the as prepared catalyst composite obviously improves the separation of electro-hole pairs. The as prepared hybrid nanosheets with Mo:In of 1/2 integrate In-doped MoS2 to reduce the stacking and increase the active surface area. The novel mesh-shaped nanostructure with a moderate degree of disorder provides not only simultaneously intrinsic conductivity and defects but also higher electrochemically active surface area (ECSA). By electrochemical measurements, such as linear sweep voltammetry (LSV), electrochemical impedance spectroscope (EIS) and cyclic voltammetry (CV), we find that the MoS2/In2S3 hybrid possesses much better photo/electrochemical activity than pristine MoS2 or In2S3. MoS2/In2S3 ultrathin nanoflaks are anticipated to be a superior photoelectrocatalyst for PEC cells, and the rational use of the MoS2/In2S3 cathode offers a new avenue toward achieving effective photo-assistant electrocatalytic activity.

  12. Large-Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics

    KAUST Repository

    Dai, Zhenyu; Wang, Zhenwei; He, Xin; Zhang, Xixiang; Alshareef, Husam N.

    2017-01-01

    2D semiconductors are poised to revolutionize the future of electronics and photonics, much like transparent oxide conductors and semiconductors have revolutionized the display industry. Herein, these two types of materials are combined to realize

  13. Solar cell array for driving MOS type FET gate. MOS gata EFT gate kudoyo taiyo denchi array

    Energy Technology Data Exchange (ETDEWEB)

    Murakami, S; Yoshida, K; Yoshiki, T; Yamaguchi, Y; Nakayama, T; Owada, Y

    1990-03-12

    There has been a semiconductor relay utilizing MOS type FET (field effect transistor). Concerning the solar cells used for a semiconductor relay, it is required to separate the cells by forming insulating oxide films first and to form semiconductor layers by using many mask patterns, since a crystal semiconductor is used. Thereby its manufacturing process becomes complicated and laminification as well as thin film formation are difficult, In view of the above, this invention proposes a solar cell array for driving a MOS type FET gate consisting of amorphous silicon semiconductor cells, which are used for a semiconductor relay with solar cells generating electromotive power by the light of a light emitting diode and a MOS type FET that the power output of the above solar cells is supplied to its gate, and which are connected in series with many steps. 9 figs.

  14. Influence of the silica growth on the radiation damages in MOS components

    International Nuclear Information System (INIS)

    Sarrabayrouse, G.; Buxo, J.

    1974-01-01

    The dependence of the radiation sensitivity of M.O.S. components on some of the technological parameters involved in M.O.S. fabrication was studied. The parameters considered are the nature of the metallic electrode and water content of the oxide film. Effects of thermal post-oxidation treatments are also considered. Results obtained show that in the case of wet oxides without post-oxidation treatments the extent of the degradation effect is controlled by the conditions of humidity under which the oxide is obtained and the chemical reactivity of the metallic electrode. The role of ionic phenomena in these experiments is discussed [fr

  15. Polish polar research (outline

    Directory of Open Access Journals (Sweden)

    Krzysztof Ludwik Birkenmajer

    2017-12-01

    Full Text Available The article describes Polish research and discoveries in the Arctic and the Antarctic since the 19th century. The author is a geologist and since 1956 has been engaged in scientific field research on Spitsbergen, Greenland and Antarctica (23 expeditions. For many years chairman of the Committee on Polar Research of the Polish Academy of Sciences, he is now its Honorary Chairman.

  16. Capacitance-voltage characterization of fully silicided gated MOS capacitor

    International Nuclear Information System (INIS)

    Wang Baomin; Ru Guoping; Jiang Yulong; Qu Xinping; Li Bingzong; Liu Ran

    2009-01-01

    This paper investigates the capacitance-voltage (C-V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C-V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C-V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C-V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C-V measurement and the photonic high-frequency C-V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C-V measurement. On the other hand, the photonic high-frequency C-V measurement can bypass the leakage problem, and get reliable low-frequency C-V characteristic, which can be used to

  17. Interface characterization of InSb MOS structures

    Energy Technology Data Exchange (ETDEWEB)

    Shapira, Y.; Bregman, J.; Calahorra, Z.; Goshen, R.

    1982-03-26

    The electrical properties of MOS devices are critically dependent on the oxide-semiconductor interface. The preparation of suitable insulating layers of oxide or other material is essential for the performance of such devices and it is particularly difficult in the case of III-V compound semiconductors. We report a method of preparing an insulating layer on InSb by a plasma oxidation process. The oxidation method will be described as well as results of the analysis of the oxide-semiconductor interface by electrical and compositional techniques. Capacitance-voltage characteristics reveal the existence of interface states which are distributed near the conduction and the valence bands with a higher density near the former. Depth profiling of the oxide by Ar/sup +/ sputtering and Auger electron spectroscopy (AES) shows that the oxide is composed of a mixture of indium oxide with antimony oxide.

  18. A 77 K MOS magnetic field detector

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, R S; Torres, A. [Instituto Nacional de Astrofisica Optica y Electronica, Puebla (Mexico); Garcia, P.J. [Universidad Veracruzana, Veracruz (Mexico); Gutierrez, E.A. [Motorola, Puebla (Mexico)

    2001-12-01

    An integrated MOS (metal-oxide-semiconductor)-compatible magnetic field detector (split-drain MAGFET) for operation at liquid-nitrogen temperature LNT (77 K) is presented. The measured relative magnetic sensibility (S{sub a}) is approximately 14%/T (double the value ever reported) using a non-optimized MAGFET structure (W/L) = (100 mm/125 mm). The cryo-magnetic structure was tested without a built-in preamplifier. It presents a power consumption of the order of mW. [Spanish] A traves de este articulo se presenta un detector de campo magnetico (split-drain MAGFET), basado en el transistor de efecto de campo MOS (metal-oxido-semiconductor), y totalmente compatible con procesos de fabricacion de circuitos integrados CMOS. La operacion optima de este detector es a temperaturas criogenicas. Aqui se presentan los resultados experimentales de la caracterizacion de una estructura no optimizada con dimensiones (W / L) = (100 mm/125 mm) a la temperatura del nitrogeno liquido (77 K). La sensibilidad relativa medida es de cerca del 14 % T, casi el doble del valor maximo antes reportado en la literatura. El dispositivo se midio sin un pre-amplificador integrado, mostrando un consumo de potencia del orden de microwatts.

  19. Functional Median Polish

    KAUST Repository

    Sun, Ying

    2012-08-03

    This article proposes functional median polish, an extension of univariate median polish, for one-way and two-way functional analysis of variance (ANOVA). The functional median polish estimates the functional grand effect and functional main factor effects based on functional medians in an additive functional ANOVA model assuming no interaction among factors. A functional rank test is used to assess whether the functional main factor effects are significant. The robustness of the functional median polish is demonstrated by comparing its performance with the traditional functional ANOVA fitted by means under different outlier models in simulation studies. The functional median polish is illustrated on various applications in climate science, including one-way and two-way ANOVA when functional data are either curves or images. Specifically, Canadian temperature data, U. S. precipitation observations and outputs of global and regional climate models are considered, which can facilitate the research on the close link between local climate and the occurrence or severity of some diseases and other threats to human health. © 2012 International Biometric Society.

  20. Electron Emission from Ultra-Large Area MOS Electron Emitters

    DEFF Research Database (Denmark)

    Thomsen, Lasse Bjørchmar; Nielsen, Gunver; Vendelbo, Søren Bastholm

    2009-01-01

    Ultralarge metal-oxide-semiconductor (MOS) devices with an active oxide area of 1 cm2 have been fabricated for use as electron emitters. The MOS structures consist of a Si substrate, a SiO2 tunnel barrier (~5 nm), a Ti wetting layer (3–10 Å), and a Au top layer (5–60 nm). Electron emission from...... layer is varied from 3 to 10 Å which changes the emission efficiency by more than one order of magnitude. The apparent mean free path of ~5 eV electrons in Au is found to be 52 Å. Deposition of Cs on the Au film increased the electron emission efficiency to 4.3% at 4 V by lowering the work function....... Electron emission under high pressures (up to 2 bars) of Ar was observed. ©2009 American Vacuum Society...

  1. Effects on focused ion beam irradiation on MOS transistors

    International Nuclear Information System (INIS)

    Campbell, A.N.; Peterson, K.A.; Fleetwood, D.M.; Soden, J.M.

    1997-01-01

    The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 μm minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga + focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated

  2. Plasma-assisted synthesis of MoS2

    Science.gov (United States)

    Campbell, Philip M.; Perini, Christopher J.; Chiu, Johannes; Gupta, Atul; Ray, Hunter S.; Chen, Hang; Wenzel, Kevin; Snyder, Eric; Wagner, Brent K.; Ready, Jud; Vogel, Eric M.

    2018-03-01

    There has been significant interest in transition metal dichalcogenides (TMDs), including MoS2, in recent years due to their potential application in novel electronic and optical devices. While synthesis methods have been developed for large-area films of MoS2, many of these techniques require synthesis temperatures of 800 °C or higher. As a result of the thermal budget, direct synthesis requiring high temperatures is incompatible with many integrated circuit processes as well as flexible substrates. This work explores several methods of plasma-assisted synthesis of MoS2 as a way to lower the synthesis temperature. The first approach used is conversion of a naturally oxidized molybdenum thin film to MoS2 using H2S plasma. Conversion is demonstrated at temperatures as low as 400 °C, and the conversion is enabled by hydrogen radicals which reduce the oxidized molybdenum films. The second method is a vapor phase reaction incorporating thermally evaporated MoO3 exposed to a direct H2S plasma, similar to chemical vapor deposition (CVD) synthesis of MoS2. Synthesis at 400 °C results in formation of super-stoichiometric MoS2 in a beam-interrupted growth process. A final growth method relies on a cyclical process in which a small amount of Mo is sputtered onto the substrate and is subsequently sulfurized in a H2S plasma. Similar results could be realized using an atomic layer deposition (ALD) process to deposit the Mo film. Compared to high temperature synthesis methods, the lower temperature samples are lower quality, potentially due to poor crystallinity or higher defect density in the films. Temperature-dependent conductivity measurements are consistent with hopping conduction in the plasma-assisted synthetic MoS2, suggesting a high degree of disorder in the low-temperature films. Optimization of the plasma-assisted synthesis process for slower growth rate and better stoichiometry is expected to lead to high quality films at low growth temperature.

  3. BATMAN: MOS Spectroscopy on Demand

    Science.gov (United States)

    Molinari, E.; Zamkotsian, F.; Moschetti, M.; Spano, P.; Boschin, W.; Cosentino, R.; Ghedina, A.; González, M.; Pérez, H.; Lanzoni, P.; Ramarijaona, H.; Riva, M.; Zerbi, F.; Nicastro, L.; Valenziano, L.; Di Marcantonio, P.; Coretti, I.; Cirami, R.

    2016-10-01

    Multi-Object Spectrographs (MOS) are the major instruments for studying primary galaxies and remote and faint objects. Current object selection systems are limited and/or difficult to implement in next generation MOS for space and ground-based telescopes. A promising solution is the use of MOEMS devices such as micromirror arrays, which allow the remote control of the multi-slit configuration in real time. TNG is hosting a novelty project for real-time, on-demand MOS masks based on MOEMS programmable slits. We are developing a 2048×1080 Digital-Micromirror-Device-based (DMD) MOS instrument to be mounted on the Galileo telescope, called BATMAN. It is a two-arm instrument designed for providing in parallel imaging and spectroscopic capabilities. With a field of view of 6.8×3.6 arcmin and a plate scale of 0.2 arcsec per micromirror, this astronomical setup can be used to investigate the formation and evolution of galaxies. The wavelength range is in the visible and the spectral resolution is R=560 for a 1 arcsec object, and the two arms will have 2k × 4k CCD detectors. ROBIN, a BATMAN demonstrator, has been designed, realized and integrated. We plan to have BATMAN first light by mid-2016.

  4. The OverMOS project

    Energy Technology Data Exchange (ETDEWEB)

    Das, D.; Dopke, J., E-mail: jens.dopke@stfc.ac.uk; McMahon, S.J.; Turchetta, R.; Villani, G.; Wilson, F.; Worm, S.

    2016-07-11

    The OverMOS project aims to create a fast radiation hard tracking detector sensor, based on High Resistivity CMOS technology. In a first prototype submission, different pixel and charge collection node geometries have been produced, which have lately been returned from fabrication and are currently under test.

  5. Controlled p-doping of black phosphorus by integration of MoS2 nanoparticles

    Science.gov (United States)

    Jeon, Sumin; Kim, Minwoo; Jia, Jingyuan; Park, Jin-Hong; Lee, Sungjoo; Song, Young Jae

    2018-05-01

    Black phosphorus (BP), a new family of two dimensional (2D) layered materials, is an attractive material for future electronic, photonic and chemical sensing devices, thanks to its high carrier density and a direct bandgap of 0.3-2.0 eV, depending on the number of layers. Controllability over the properties of BP by electrical or chemical modulations is one of the critical requirements for future various device applications. Herein, we report a new doping method of BP by integration of density-controlled monolayer MoS2 nanoparticles (NPs). MoS2 NPs with different density were synthesized by chemical vapor deposition (CVD) and transferred onto a few-layer BP channel, which induced a p-doping effect. Scanning electron microscopy (SEM) confirmed the size and distribution of MoS2 NPs with different density. Raman and X-ray photoelectron spectroscopy (XPS) were measured to confirm the oxidation on the edge of MoS2 NPs and a doping effect of MoS2 NPs on a BP channel. The doping mechanism was explained by a charge transfer by work function differences between BP and MoS2 NPs, which was confirmed by Kelvin probe force microscopy (KPFM) and electrical measurements. The hole concentration of BP was controlled with different densities of MoS2 NPs in a range of 1012-1013 cm-2.

  6. Polish Higher Education: Intersectoral Distinctiveness

    Science.gov (United States)

    Musial, Joanna

    2014-01-01

    This study analyzes degrees of differences between the private and public sectors of Polish higher education. It finds them to be strong: Polish private institutions function very differently from Polish public institutions and these differences correspond with those found in the literature on higher education elsewhere in the world. Polish…

  7. CMOS-compatible batch processing of monolayer MoS2 MOSFETs

    Science.gov (United States)

    Xiong, Kuanchen; Kim, Hyun; Marstell, Roderick J.; Göritz, Alexander; Wipf, Christian; Li, Lei; Park, Ji-Hoon; Luo, Xi; Wietstruck, Matthias; Madjar, Asher; Strandwitz, Nicholas C.; Kaynak, Mehmet; Lee, Young Hee; Hwang, James C. M.

    2018-04-01

    Thousands of high-performance 2D metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on wafer-scale chemical vapor deposited MoS2 with fully-CMOS-compatible processes such as photolithography and aluminum metallurgy. The yield was greater than 50% in terms of effective gate control with less-than-10 V threshold voltage, even for MOSFETs having deep-submicron gate length. The large number of fabricated MOSFETs allowed statistics to be gathered and the main yield limiter to be attributed to the weak adhesion between the transferred MoS2 and the substrate. With cut-off frequencies approaching the gigahertz range, the performances of the MOSFETs were comparable to that of state-of-the-art MoS2 MOSFETs, whether the MoS2 was grown by a thin-film process or exfoliated from a bulk crystal.

  8. Comparison of electron transmittances and tunneling currents in an anisotropic TiNx/HfO2/SiO2/p-Si(100) metal-oxide-semiconductor (MOS) capacitor calculated using exponential- and Airy-wavefunction approaches and a transfer matrix method

    International Nuclear Information System (INIS)

    Noor, Fatimah A.; Abdullah, Mikrajuddin; Sukirno; Khairurrijal

    2010-01-01

    Analytical expressions of electron transmittance and tunneling current in an anisotropic TiN x /HfO 2 /SiO 2 /p-Si(100) metal-oxide-semiconductor (MOS) capacitor were derived by considering the coupling of transverse and longitudinal energies of an electron. Exponential and Airy wavefunctions were utilized to obtain the electron transmittance and the electron tunneling current. A transfer matrix method, as a numerical approach, was used as a benchmark to assess the analytical approaches. It was found that there is a similarity in the transmittances calculated among exponential- and Airy-wavefunction approaches and the TMM at low electron energies. However, for high energies, only the transmittance calculated by using the Airy-wavefunction approach is the same as that evaluated by the TMM. It was also found that only the tunneling currents calculated by using the Airy-wavefunction approach are the same as those obtained under the TMM for all range of oxide voltages. Therefore, a better analytical description for the tunneling phenomenon in the MOS capacitor is given by the Airy-wavefunction approach. Moreover, the tunneling current density decreases as the titanium concentration of the TiN x metal gate increases because the electron effective mass of TiN x decreases with increasing nitrogen concentration. In addition, the mass anisotropy cannot be neglected because the tunneling currents obtained under the isotropic and anisotropic masses are very different. (semiconductor devices)

  9. Protection of MOS capacitors during anodic bonding

    Science.gov (United States)

    Schjølberg-Henriksen, K.; Plaza, J. A.; Rafí, J. M.; Esteve, J.; Campabadal, F.; Santander, J.; Jensen, G. U.; Hanneborg, A.

    2002-07-01

    We have investigated the electrical damage by anodic bonding on CMOS-quality gate oxide and methods to prevent this damage. n-type and p-type MOS capacitors were characterized by quasi-static and high-frequency CV-curves before and after anodic bonding. Capacitors that were bonded to a Pyrex wafer with 10 μm deep cavities enclosing the capacitors exhibited increased leakage current and interface trap density after bonding. Two different methods were successful in protecting the capacitors from such damage. Our first approach was to increase the cavity depth from 10 μm to 50 μm, thus reducing the electric field across the gate oxide during bonding from approximately 2 × 105 V cm-1 to 4 × 104 V cm-1. The second protection method was to coat the inside of a 10 μm deep Pyrex glass cavity with aluminium, forming a Faraday cage that removed the electric field across the cavity during anodic bonding. Both methods resulted in capacitors with decreased interface trap density and unchanged leakage current after bonding. No change in effective oxide charge or mobile ion contamination was observed on any of the capacitors in the study.

  10. Dosimetric properties of MOS transistors

    International Nuclear Information System (INIS)

    Peter, I.; Frank, G.

    1977-01-01

    The performance of MOS transistors as gamma detectors has been tested. The dosimeter sensitivity has proved to be independent on the doses ranging from 10 3 to 10 6 R, and gamma energy of 137 Cs, 60 Co - sources and 5 - 18 MeV electrons. Fading of the space charge trapped by the SiO 2 layer of the transistor has appeared to be neglegible at room temperature after 400 hrs. The isochronous annealing in the temperature range of 40-260 deg C had a more substantial effect on the space charge of the transistor irradiated with 18 MeV electrons than on the 137 Cs gamma-irradiated transistors. This proved a repeated use of γ-dosemeters. MOS transistors are concluded to be promising for gamma dosimetry [ru

  11. Polish Semantic Parser

    Directory of Open Access Journals (Sweden)

    Agnieszka Grudzinska

    2000-01-01

    Full Text Available Amount of information transferred by computers grows very rapidly thus outgrowing the average man's capability of reception. It implies computer programs increase in the demand for which would be able to perform an introductory classitication or even selection of information directed to a particular receiver. Due to the complexity of the problem, we restricted it to understanding short newspaper notes. Among many conceptions formulated so far, the conceptual dependency worked out by Roger Schank has been chosen. It is a formal language of description of the semantics of pronouncement integrated with a text understanding algorithm. Substantial part of each text transformation system is a semantic parser of the Polish language. It is a module, which as the first and the only one has an access to the text in the Polish language. lt plays the role of an element, which finds relations between words of the Polish language and the formal registration. It translates sentences written in the language used by people into the language theory. The presented structure of knowledge units and the shape of understanding process algorithms are universal by virtue of the theory. On the other hand the defined knowledge units and the rules used in the algorithms ure only examples because they are constructed in order to understand short newspaper notes.

  12. Hydrogen and Methane Response of Pd Gate MOS Sensor

    Directory of Open Access Journals (Sweden)

    Preeti Pandey

    2009-04-01

    Full Text Available A sensor based on Pd/SiO2/Si MOS capacitor was fabricated on p type (1-6 ΩCm Si with thermal oxide layer of thickness about 33Ǻ. Sensor properties of the MOS structure were studied towards hydrogen (500- 3500 ppm in air and methane gas (1000-2500 ppm in air at room temperature and 140˚C respectively. The response of the sensor was measured as shift in C-V curve of the MOS structure. The sensitivity of the sensor towards the hydrogen (73 % at 0.03 V bias was better than methane (19.1 % at 0.68 V bias. SEM (Scanning electron microscopy and AFM image of the metal film show the porous structure which believed to be facilitating the catalytic oxidation of the insulator surface and higher gas response. High sensitivity of the sensor can be attributed to the change of interface state density on exposure of gases along with the formation of dipole layer.

  13. A complementary MOS process

    International Nuclear Information System (INIS)

    Jhabvala, M.D.

    1977-03-01

    The complete sequence used to manufacture complementary metal oxide semiconductor (CMOS) integrated circuits is described. The fixed-gate array concept is presented as a means of obtaining CMOS integrated circuits in a fast and reliable fashion. Examples of CMOS circuits fabricated by both the conventional method and the fixed-gate array method are included. The electrical parameter specifications and characteristics are given along with typical values used to produce CMOS circuits. Temperature-bias stressing data illustrating the thermal stability of devices manufactured by this process are presented. Results of a preliminary study on the radiation sensitivity of circuits manufactured by this process are discussed. Some process modifications are given which have improved the radiation hardness of our CMOS devices. A formula description of the chemicals and gases along with the gas flow rates is also included

  14. MOS modeling hierarchy including radiation effects

    International Nuclear Information System (INIS)

    Alexander, D.R.; Turfler, R.M.

    1975-01-01

    A hierarchy of modeling procedures has been developed for MOS transistors, circuit blocks, and integrated circuits which include the effects of total dose radiation and photocurrent response. The models were developed for use with the SCEPTRE circuit analysis program, but the techniques are suitable for other modern computer aided analysis programs. The modeling hierarchy permits the designer or analyst to select the level of modeling complexity consistent with circuit size, parametric information, and accuracy requirements. Improvements have been made in the implementation of important second order effects in the transistor MOS model, in the definition of MOS building block models, and in the development of composite terminal models for MOS integrated circuits

  15. Material removal mechanisms in electrochemical-mechanical polishing of tantalum

    International Nuclear Information System (INIS)

    Gao, F.; Liang, H.

    2009-01-01

    Material removal mechanisms in tantalum chemical-mechanical polishing (CMP) and electrochemical-mechanical polishing (ECMP) were investigated using the single frequency electrochemical impedance spectroscopy (EIS). Through measuring the impedance of the tantalum surface, the single frequency EIS scan made it possible to observe the CMP and ECMP processes in situ. The impedance results presented competing mechanisms of removal and formation of a surface oxide layer of tantalum. Analysis indicated that the thickness of the oxide layer formed during polishing was related to the mechanical power correlated to the friction force and the rotating speed. Furthermore, the rate of growth and removal of the oxide film was a function of the mechanical power. This understanding is beneficial for optimization of CMP and ECMP processes.

  16. Laser polishing of 3D printed mesoscale components

    International Nuclear Information System (INIS)

    Bhaduri, Debajyoti; Penchev, Pavel; Batal, Afif; Dimov, Stefan; Soo, Sein Leung; Sten, Stella; Harrysson, Urban; Zhang, Zhenxue; Dong, Hanshan

    2017-01-01

    Highlights: • Process optimisation for laser polishing novel 3D printed SS316L parts. • Evaluating the effects of key polishing parameters on SS316L surface roughness. • Detailed spectroscopic analysis of oxide layer formation due to laser polishing. • Comparative surface integrity analysis of SS parts polished in air and argon. • A maximum reduction in roughness of over 94% achieved at optimised polishing settings. - Abstract: Laser polishing of various engineered materials such as glass, silica, steel, nickel and titanium alloys, has attracted considerable interest in the last 20 years due to its superior flexibility, operating speed and capability for localised surface treatment compared to conventional mechanical based methods. The paper initially reports results from process optimisation experiments aimed at investigating the influence of laser fluence and pulse overlap parameters on resulting workpiece surface roughness following laser polishing of planar 3D printed stainless steel (SS316L) specimens. A maximum reduction in roughness of over 94% (from ∼3.8 to ∼0.2 μm S_a) was achieved at the optimised settings (fluence of 9 J/cm"2 and overlap factors of 95% and 88–91% along beam scanning and step-over directions respectively). Subsequent analysis using both X-ray photoelectron spectroscopy (XPS) and glow discharge optical emission spectroscopy (GDOES) confirmed the presence of surface oxide layers (predominantly consisting of Fe and Cr phases) up to a depth of ∼0.5 μm when laser polishing was performed under normal atmospheric conditions. Conversely, formation of oxide layers was negligible when operating in an inert argon gas environment. The microhardness of the polished specimens was primarily influenced by the input thermal energy, with greater sub-surface hardness (up to ∼60%) recorded in the samples processed with higher energy density. Additionally, all of the polished surfaces were free of the scratch marks, pits, holes, lumps

  17. Laser polishing of 3D printed mesoscale components

    Energy Technology Data Exchange (ETDEWEB)

    Bhaduri, Debajyoti, E-mail: debajyoti.bhaduri@gmail.com [Department of Mechanical Engineering, School of Engineering, University of Birmingham, Edgbaston, Birmingham, B15 2TT (United Kingdom); Penchev, Pavel; Batal, Afif; Dimov, Stefan; Soo, Sein Leung [Department of Mechanical Engineering, School of Engineering, University of Birmingham, Edgbaston, Birmingham, B15 2TT (United Kingdom); Sten, Stella; Harrysson, Urban [Digital Metal, Höganäs AB, 263 83 Höganäs (Sweden); Zhang, Zhenxue; Dong, Hanshan [School of Metallurgy and Materials, University of Birmingham, Edgbaston, Birmingham, B15 2TT (United Kingdom)

    2017-05-31

    Highlights: • Process optimisation for laser polishing novel 3D printed SS316L parts. • Evaluating the effects of key polishing parameters on SS316L surface roughness. • Detailed spectroscopic analysis of oxide layer formation due to laser polishing. • Comparative surface integrity analysis of SS parts polished in air and argon. • A maximum reduction in roughness of over 94% achieved at optimised polishing settings. - Abstract: Laser polishing of various engineered materials such as glass, silica, steel, nickel and titanium alloys, has attracted considerable interest in the last 20 years due to its superior flexibility, operating speed and capability for localised surface treatment compared to conventional mechanical based methods. The paper initially reports results from process optimisation experiments aimed at investigating the influence of laser fluence and pulse overlap parameters on resulting workpiece surface roughness following laser polishing of planar 3D printed stainless steel (SS316L) specimens. A maximum reduction in roughness of over 94% (from ∼3.8 to ∼0.2 μm S{sub a}) was achieved at the optimised settings (fluence of 9 J/cm{sup 2} and overlap factors of 95% and 88–91% along beam scanning and step-over directions respectively). Subsequent analysis using both X-ray photoelectron spectroscopy (XPS) and glow discharge optical emission spectroscopy (GDOES) confirmed the presence of surface oxide layers (predominantly consisting of Fe and Cr phases) up to a depth of ∼0.5 μm when laser polishing was performed under normal atmospheric conditions. Conversely, formation of oxide layers was negligible when operating in an inert argon gas environment. The microhardness of the polished specimens was primarily influenced by the input thermal energy, with greater sub-surface hardness (up to ∼60%) recorded in the samples processed with higher energy density. Additionally, all of the polished surfaces were free of the scratch marks, pits, holes

  18. Effect of gamma-ray irradiation on the surface states of MOS tunnel junctions

    Science.gov (United States)

    Ma, T. P.; Barker, R. C.

    1974-01-01

    Gamma-ray irradiation with doses up to 8 megarad produces no significant change on either the C(V) or the G(V) characteristics of MOS tunnel junctions with intermediate oxide thicknesses (40-60 A), whereas the expected flat-band shift toward negative electrode voltages occurs in control thick oxide capacitors. A simple tunneling model would explain the results if the radiation-generated hole traps are assumed to lie below the valence band of the silicon. The experiments also suggest that the observed radiation-generated interface states in conventional MOS devices are not due to the radiation damage of the silicon surface.

  19. Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

    International Nuclear Information System (INIS)

    Ni Henan; Wu Liangcai; Song Zhitang; Hui Chun

    2009-01-01

    An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO 2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. (semiconductor devices)

  20. Irradiation of: MOS field effect structures effect of the radiation dose

    International Nuclear Information System (INIS)

    Leray, J.L.

    1989-01-01

    The radiation effects on the structure and the operation of a metal-oxide semiconductor (MOS) are studied. The phenomenology of the radiation damage is analyzed as a function of the accumulated radiation dose and the time. The chronology of the phenomena which takes place in the oxide and the radiation transient phases in MOS structures are discussed. The equivalence of different radiations on SiO2 and other semiconductors is analyzed. The models applied to the study of the radiation permanent effects are reviewed [fr

  1. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.

    Science.gov (United States)

    Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

    2017-01-13

    Two-dimensional layered semiconductors such as molybdenum disulfide (MoS 2 ) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS 2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS 2 and an ultra-thin HfO 2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS 2 -HfO 2 interface is responsible for the generation of interface states with a density (D it ) reaching ~7.03 × 10 11  cm -2  eV -1 . This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS 2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in D it could be achieved by thermally diffusing S atoms to the MoS 2 -HfO 2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS 2 devices with carrier transport enhancement.

  2. Efficient simulation of power MOS transistors

    NARCIS (Netherlands)

    Ugryumova, M.; Schilders, W.H.A.

    2011-01-01

    In this report we present a few industrial problems related to modeling of MOS transistors. We suggest an efficient algorithm for computing output current at the top ports of power MOS transistors for given voltage excitations. The suggested algorithm exploits the connection between the resistor and

  3. Estudo da oxidação dos sulfetos sintéticos molibdenita (MoS2 e covelita (CuS por Acidithiobacillus ferrooxidans via respirometria celular Oxidation study of the synthetic sulfides molybdenite (MoS2 and covellite (CuS by Acidithiobacillus ferrooxidans using respirometric experiments

    Directory of Open Access Journals (Sweden)

    Wilmo E. Francisco Junior

    2009-01-01

    Full Text Available This paper analyses the oxidation of covellite and molybdenite by Acidithiobacillus ferrooxidans strain LR using respirometric experiments. The results showed that both sulfides were oxidized by A. ferrooxidans, however, the covellite oxidation was much higher than molybdenite. Regarding the kinetic oxidation, the findings revealed that just molybdenite oxidation followed the classical Michaelis-Menten kinetic. It is probably associated with the pathway which these sulfides react to chemistry-bacterial attack, what is influenced by its electronic structures. Besides, experiments conducted in the presence of Fe3+ did not indicate alterations in molybdenite oxidation. Thus, ferric ions seem not to be essential to the sulfide oxidations.

  4. Analytical models for total dose ionization effects in MOS devices.

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Phillip Montgomery; Bogdan, Carolyn W.

    2008-08-01

    MOS devices are susceptible to damage by ionizing radiation due to charge buildup in gate, field and SOI buried oxides. Under positive bias holes created in the gate oxide will transport to the Si / SiO{sub 2} interface creating oxide-trapped charge. As a result of hole transport and trapping, hydrogen is liberated in the oxide which can create interface-trapped charge. The trapped charge will affect the threshold voltage and degrade the channel mobility. Neutralization of oxidetrapped charge by electron tunneling from the silicon and by thermal emission can take place over long periods of time. Neutralization of interface-trapped charge is not observed at room temperature. Analytical models are developed that account for the principal effects of total dose in MOS devices under different gate bias. The intent is to obtain closed-form solutions that can be used in circuit simulation. Expressions are derived for the aging effects of very low dose rate radiation over long time periods.

  5. [Lysenkoism in Polish botany].

    Science.gov (United States)

    Köhler, Piotr

    2008-01-01

    Lysenkoism in Poland was never an autonomous phenomenon. The whole array of reasons for which it appeared in Polish science would require a separate study--here it only needs to be pointed out that the major reasons included terror on the part of the security service, lawlessness, the ubiquitous atmosphere of intimidation and terror, censorship, the diminishing sphere of civil liberties, political show trials, propaganda and denunciations. An important role in facilitating the introduction of Lysenkoism was played also by the reorganization of science after World War Two, the isolation of Polish science from science in the West, as well as the damage it had suffered during the war. At first, Lysenkoism was promoted in Poland by a small group of enthusiastic and uncritical proponents. A overview of the events connected with the ten years of Lysenkoism in Poland (end of 1948--beginning of 1958) shows a two-tier picture of how the 'idea' was propagated. The first tier consisted in the activities of the Association of Marxist Naturalists [Koło Przyrodników-Marksistów], which it engaged in since the end of 1948. The Association was later transformed into a Union of Marxist Naturalists, and this in turn merged, in 1952, with the Copernican Society of Polish Naturalists [Polskie Towarzystwo Przyrodników im. Kopernika]. It was that society which promoted Lysenkoism longest, until the end of 1956. The propaganda and training activities of the circle and the society prepared ground for analogous activities of the newly formed Polish Academy of Science (PAN), which--since its very establishment in 1952--engaged in promoting Lysenkoism through its Second Division. These activities were aimed at naturalists, initially at those who were prominent scientists (eg. the conference at Kuźnice, 1950/1951), and then at those who were only starting their academic career (including national courses in new biology at Dziwnów, 1952, or Kortowo, 1953 and 1955). The end to promoting

  6. Model for thickness dependence of radiation charging in MOS structures

    Science.gov (United States)

    Viswanathan, C. R.; Maserjian, J.

    1976-01-01

    The model considers charge buildup in MOS structures due to hole trapping in the oxide and the creation of sheet charge at the silicon interface. The contribution of hole trapping causes the flatband voltage to increase with thickness in a manner in which square and cube dependences are limiting cases. Experimental measurements on samples covering a 200 - 1000 A range of oxide thickness are consistent with the model, using independently obtained values of hole-trapping parameters. An important finding of our experimental results is that a negative interface charge contribution due to surface states created during irradiation compensates most of the positive charge in the oxide at flatband. The tendency of the surface states to 'track' the positive charge buildup in the oxide, for all thicknesses, applies both in creation during irradiation and in annihilation during annealing. An explanation is proposed based on the common defect origin of hole traps and potential surface states.

  7. Polish Americans. Second, Revised Edition.

    Science.gov (United States)

    Lopata, Helen Znaniecka

    This book examines Polonia, the Polish ethnic community in America created by three giant waves of immigration between 1880 and 1990. The complicated history of this ethnic group is reflected in the lives of increasing numbers of Polish Americans, including recent immigrants brought by political and economic changes, as they achieve middle class…

  8. Factors influencing the surface quality of polished tool steels

    International Nuclear Information System (INIS)

    Rebeggiani, S; Rosén, B-G

    2014-01-01

    Today’s demands on surface quality of moulds for injection moulding of plastic components involve no/low defect contents and roughness levels in the nm-range for high gloss applications. Material properties as well as operating conditions influence the mould finish, and thus the final surface of moulded products. This paper focuses on how particle content and different polishing strategies influence final surface qualities of moulds. Visual estimations of polished tool steel samples were combined with non-contact 3D-surface texture analysis in order to correlate traditional assessments to more quantitative methods, and to be able to analyse the surfaces at nanometre-level. It was found that steels with a lower proportion of particles, like carbides and oxides, gave rise to smoother polished surfaces. In a comparative study of polishers from different polishing shops, it was found that while different surface preparation strategies can lead to similar final roughness, similar preparation techniques can produce high-quality surfaces from different steel grades. However, the non-contact 3D-surface texture analysis showed that not all smooth polished surfaces have desirable functional topographies for injection moulding of glossy plastic components. (paper)

  9. Facile Fabrication of MoS2-Modified SnO2 Hybrid Nanocomposite for Ultrasensitive Humidity Sensing.

    Science.gov (United States)

    Zhang, Dongzhi; Sun, Yan'e; Li, Peng; Zhang, Yong

    2016-06-08

    An ultrasensitive humidity sensor based on molybdenum-disulfide- (MoS2)-modified tin oxide (SnO2) nanocomposite has been demonstrated in this work. The nanostructural, morphological, and compositional properties of an as-prepared MoS2/SnO2 nanocomposite were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersive spectrometry (EDS), nitrogen sorption analysis, and Raman spectroscopy, which confirmed its successful preparation and rationality. The sensing characteristics of the MoS2/SnO2 hybrid film device against relative humidity (RH) were investigated at room temperature. The RH sensing results revealed an unprecedented response, ultrafast response/recovery behaviors, and outstanding repeatability. To our knowledge, the sensor response yielded in this work was tens of times higher than that of the existing humidity sensors. Moreover, the MoS2/SnO2 hybrid nanocomposite film sensor exhibited great enhancement in humidity sensing performances as compared to the pure MoS2, SnO2, and graphene counterparts. Furthermore, complex impedance spectroscopy and bode plots were employed to understand the underlying sensing mechanisms of the MoS2/SnO2 nanocomposite toward humidity. The synthesized MoS2/SnO2 hybrid composite was proved to be an excellent candidate for constructing ultrahigh-performance humidity sensor toward various applications.

  10. Transfer matrix approach to electron transport in monolayer MoS2/MoO x heterostructures

    Science.gov (United States)

    Li, Gen

    2018-05-01

    Oxygen plasma treatment can introduce oxidation into monolayer MoS2 to transfer MoS2 into MoO x , causing the formation of MoS2/MoO x heterostructures. We find the MoS2/MoO x heterostructures have the similar geometry compared with GaAs/Ga1‑x Al x As semiconductor superlattice. Thus, We employ the established transfer matrix method to analyse the electron transport in the MoS2/MoO x heterostructures with double-well and step-well geometries. We also considere the coupling between transverse and longitudinal kinetic energy because the electron effective mass changes spatially in the MoS2/MoO x heterostructures. We find the resonant peaks show red shift with the increasing of transverse momentum, which is similar to the previous work studying the transverse-momentum-dependent transmission in GaAs/Ga1‑x Al x As double-barrier structure. We find electric field can enhance the magnitude of peaks and intensify the coupling between longitudinal and transverse momentums. Moreover, higher bias is applied to optimize resonant tunnelling condition to show negative differential effect can be observed in the MoS2/MoO x system.

  11. Solution processable mixed-solvent exfoliated MoS2 nanosheets for efficient and robust organic light-emitting diodes

    Science.gov (United States)

    Liu, Chia-Wei; Wang, Chia; Liao, Chia-Wei; Golder, Jan; Tsai, Ming-Chih; Young, Hong-Tsu; Chen, Chin-Ti; Wu, Chih-I.

    2018-04-01

    We demonstrate the use of solution-processed molybdenum trioxide (MoO3) nanoparticle-decorated molybdenum disulfide (MoS2) nanosheets (MoS2/MoO3) as hole injection layer (HIL) in organic lighting diodes (OLEDs). The device performance is shown to be significantly improved by the introduction of such MoS2/MoO3 HIL without any post-ultraviolet-ozone treatment, and is shown to better the performance of devices fabricated using conventional poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) and MoO3 nanoparticle HILs. The MoS2/MoO3 nanosheets form a compact film, as smooth as PEDOT:PSS films and smoother than MoO3 nanoparticle films, when simply spin-coated on indium tin oxide substrates. The improvement in device efficiency can be attributed to the smooth surface of the nanostructured MoS2/MoO3 HIL and the excellent conductivity characteristics of the two-dimensional (2D) layered material (MoS2), which facilitate carrier transport in the device and reduce the sheet resistance. Moreover, the long-term stability of OLED devices that use such MoS2/MoO3 layers is shown to be improved dramatically compared with hygroscopic and acidic PEDOT:PSS-based devices.

  12. Solution processable mixed-solvent exfoliated MoS2 nanosheets for efficient and robust organic light-emitting diodes

    Directory of Open Access Journals (Sweden)

    Chia-Wei Liu

    2018-04-01

    Full Text Available We demonstrate the use of solution-processed molybdenum trioxide (MoO3 nanoparticle-decorated molybdenum disulfide (MoS2 nanosheets (MoS2/MoO3 as hole injection layer (HIL in organic lighting diodes (OLEDs. The device performance is shown to be significantly improved by the introduction of such MoS2/MoO3 HIL without any post-ultraviolet-ozone treatment, and is shown to better the performance of devices fabricated using conventional poly(3,4-ethylenedioxythiophene-poly(styrenesulfonate (PEDOT:PSS and MoO3 nanoparticle HILs. The MoS2/MoO3 nanosheets form a compact film, as smooth as PEDOT:PSS films and smoother than MoO3 nanoparticle films, when simply spin-coated on indium tin oxide substrates. The improvement in device efficiency can be attributed to the smooth surface of the nanostructured MoS2/MoO3 HIL and the excellent conductivity characteristics of the two-dimensional (2D layered material (MoS2, which facilitate carrier transport in the device and reduce the sheet resistance. Moreover, the long-term stability of OLED devices that use such MoS2/MoO3 layers is shown to be improved dramatically compared with hygroscopic and acidic PEDOT:PSS-based devices.

  13. Estudo da dissolução oxidativa microbiológica de uma complexa amostra mineral contendo pirita (FeS2, Pirrotita (Fe1-xS e Molibdenita (MoS2 Microbiological oxidative dissolution of a complex mineral sample containing pyrite (FeS2, pyrrotite (Fe1-xS and molybdenite (MoS2

    Directory of Open Access Journals (Sweden)

    Wilmo E. Francisco Jr

    2007-10-01

    Full Text Available This work aims to study the oxidation of a complex molybdenite mineral which contains pyrite and pyrrotite, by Acidithiobacillus ferrooxidans. This study was performed by respirometric essays and bioleaching in shake flasks. Respirometric essays yielded the kinetics of mineral oxidation. The findings showed that sulfide oxidation followed classical Michaelis-Menten kinetics. Bioleaching in shake flasks allowed evaluation of chemical and mineralogical changes resulting from sulfide oxidation. The results demonstrated that pyrrotite and pyrite were completely oxidized in A. ferrooxidans cultures whereas molybdenite was not consumed. These data indicated that molybdenite was the most recalcitrant sulfide in the sample.

  14. [A study of different polishing techniques for amalgams and glass-cermet cement by scanning electron microscope (SEM)].

    Science.gov (United States)

    Kakaboura, A; Vougiouklakis, G; Argiri, G

    1989-01-01

    Finishing and polishing an amalgam restoration, is considered as an important and necessary step of the restorative procedure. Various polishing techniques have been recommended to success a smooth amalgam surface. The aim of this study was to investigate the influence of three different polishing treatments on the marginal integrity and surface smoothness of restorations made of three commercially available amalgams and a glass-cermet cement. The materials used were the amalgams, Amalcap (Vivadent), Dispersalloy (Johnson and Johnson), Duralloy (Degussa) and the glass-cermet Katac-Silver (ESPE). The occlusal surfaces of the restorations were polished by the methods: I) round bur, No4-rubber cup-zinc oxide paste in a small brush, II) round bur No 4-bur-brown, green and super green (Shofu) polishing cups and points successively and III) amalgam polishing bur of 12-blades-smooth amalgam polishing bur. Photographs from unpolished and polished surfaces of the restorations, were taken with scanning electron microscope, to evaluate the polishing techniques. An improvement of marginal integrity and surface smoothness of all amalgam restorations was observed after the specimens had been polished with the three techniques. Method II, included Shofu polishers, proved the best results in comparison to the methods I and III. Polishing of glass-cermet cement was impossible with the examined techniques.

  15. Polishing large NaCl windows on a continuous polisher

    International Nuclear Information System (INIS)

    Williamson, R.

    1979-01-01

    The Helios and Antares CO 2 fusion laser systems incorporate numerous large sodium chloride windows. These must be refinished periodically, making necessary a consistent and predictable polishing capability. A continuous polisher (or annular lap) which might at Kirtland's Developmental Optical Facility. Large NaCl windows had not been polished on this type of machine. The machine has proven itself capable of producing lambda/16 figures at 633 nm (HeNe) with extremely smooth surfaces on glass. Since then, we have been working exclusively on NaCl optics. Due to different polishing parameters between NaCl and glass, and the slight solubility of the pitch in the slurry, this phase presents new problems. The work on glass will be reviewed. Results on NaCl to date will be reported. The potential of this type of machine relative to prisms, thin and irregularly shaped optics will be discussed

  16. Three-Dimensional Tubular MoS2/PANI Hybrid Electrode for High Rate Performance Supercapacitor.

    Science.gov (United States)

    Ren, Lijun; Zhang, Gaini; Yan, Zhe; Kang, Liping; Xu, Hua; Shi, Feng; Lei, Zhibin; Liu, Zong-Huai

    2015-12-30

    By using three-dimensional (3D) tubular molybdenum disulfide (MoS2) as both an active material in electrochemical reaction and a framework to provide more paths for insertion and extraction of ions, PANI nanowire arrays with a diameter of 10-20 nm can be controllably grown on both the external and internal surface of 3D tubular MoS2 by in situ oxidative polymerization of aniline monomers and 3D tubular MoS2/PANI hybrid materials with different amounts of PANI are prepared. A controllable growth of PANI nanowire arrays on the tubular MoS2 surface provides an opportunity to optimize the capacitive performance of the obtained electrodes. When the loading amount of PANI is 60%, the obtained MoS2/PANI-60 hybrid electrode not only shows a high specific capacitance of 552 F/g at a current density of 0.5 A/g, but also gives excellent rate capability of 82% from 0.5 to 30 A/g. The remarkable rate performance can be mainly attributed to the architecture with synergistic effect between 3D tubular MoS2 and PANI nanowire arrays. Moreover, the MoS2/PANI-60 based symmetric supercapacitor also exhibits the excellent rate performance and good cycling stability. The specific capacitance based on the total mass of the two electrodes is 124 F/g at a current density of 1 A/g and 79% of its initial capacitance is remained after 6000 cycles. The 3D tubular structure provides a good and favorable method for improving the capacitance retention of PANI electrode.

  17. Production of rare earth polishing powders in Russia

    International Nuclear Information System (INIS)

    Kosynkin, V.D.; Ivanov, E.N.; Kotrekhov, V.A.; Shtutza, M.G.; Grabko, A.I.

    1998-01-01

    Full text: Russia is a potent producer of polishing powders made of rare earth material presented as an extensive and well developed base. Considering the reserves, the facilities predisposition and the polishing agent (cerium dioxide) content the chief mineral source is loparite, apatite and monazite. The production of rare earth polishing powders is based on specially developed continuous technological processes, corrosion-proof equipment, ensuring a high and stable production quality. A special attention is paid to the radiation safety of the powders. The initial material for the rare earth polishing powders based on loparite is the fusion cake of rare earth chlorides obtained at that mineral chlorination. The technology of the polishing powder production from the REE fusion cake includes the following stages: dissolution of the REE fusion cake chlorides; - thorough cleaning of the REE fusion cake chlorides from radioactive and non-rare-earth impurities; chemical precipitation of REE carbonates, obtaining middlings with proper material and granulometric composition, thermal treatment of precipitated carbonates followed with the operations of drying and roasting; classification of roasted oxides, obtaining end products - polishing powders. The production of fluorine-containing powders includes the stage of their fluorination after the stage of carbonate precipitation. The stabilizing doping can be introduced both into the middlings during one of the technological process of powders manufacturing and into the end product. Rare earth polishing powders are manufactured in Russia by the Share Holding Company 'Chepetz Mechanical Plant' (ChMP Co.), the city of Glasov. The plant produces a number of polishing materials, such as; polishing powder Optinol, containing at least 50% by mass of cerium dioxide, used in the mass production of optical and other articles; polishing powder Optinol-10 with doping to improve the sedimentary and aggregate stability of the solid phase

  18. Energy dependence of pMOS dosemeters

    International Nuclear Information System (INIS)

    Savic, Z.; Stankovic, S.; Kovacevic, M.; Petrovic, M.

    1996-01-01

    The results are presented of experimental work and numerical simulations of the energy response for pMOS dosimetric transistors in their custom packages. Specially produced radiation soft pMOS transistors were used in this experimental work. The irradiation of pMOS dosemeters was done using 60 Co and 137 Cs sources, a dosimetric X ray unit, and a radiotherapeutic linear accelerator in the range of photon energies from 21 keV to 8 MeV. The results show that package geometry and materials can significantly affect and smooth the energy dependence of pMOS transistors and that in custom transistor packages they are not tissue-equivalent dosemeters. Their response in the photon energy range of 45 to 250 keV is significantly larger than it should be (maximum dose enhancement factor can be as high as 8) and some energy compensation techniques must be used in order to fulfill the requirements of corresponding standards. (Author)

  19. Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

    KAUST Repository

    Wang, Zhenwei; He, Xin; Zhang, Xixiang; Alshareef, Husam N.

    2016-01-01

    A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10

  20. Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements

    International Nuclear Information System (INIS)

    Wang, D.; Ueda, A.; Takada, H.; Nakashima, H.

    2006-01-01

    A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τ g ) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τ g measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission

  1. High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics

    Directory of Open Access Journals (Sweden)

    Young Ki Hong

    2016-05-01

    Full Text Available Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS2 thin-film transistor (TFT, which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS2 TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS2 and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range.

  2. Detection of paint polishing defects

    Science.gov (United States)

    Rebeggiani, S.; Wagner, M.; Mazal, J.; Rosén, B.-G.; Dahlén, M.

    2018-06-01

    Surface finish plays a major role on perceived product quality, and is the first thing a potential buyer sees. Today end-of-line repairs of the body of cars and trucks are inevitably to secure required surface quality. Defects that occur in the paint shop, like dust particles, are eliminated by manual sanding/polishing which lead to other types of defects when the last polishing step is not performed correctly or not fully completed. One of those defects is known as ‘polishing roses’ or holograms, which are incredibly hard to detect in artificial light but are clearly visible in sunlight. This paper will present the first tests with a measurement set-up newly developed to measure and analyse polishing roses. The results showed good correlations to human visual evaluations where repaired panels were estimated based on the defects’ intensity, severity and viewing angle.

  3. Tooth polishing: The current status

    Directory of Open Access Journals (Sweden)

    Madhuri Alankar Sawai

    2015-01-01

    Full Text Available Healthy teeth and gums make a person feel confident and fit. As people go about their daily routines and with different eating and drinking habits, the tooth enamel turns yellowish or gets stained. Polishing traditionally has been associated with the prophylaxis procedure in most dental practices, which patients know and expect. However, with overzealous use of polishing procedure, there is wearing of the superficial tooth structure. This would lead to more accumulation of local deposits. Also, it takes a long time for the formation of the fluoride-rich layer of the tooth again. Hence, now-a-days, polishing is not advised as a part of routine oral prophylaxis procedure but is done selectively based on the patients′ need. The article here, gives an insight on the different aspects of the polishing process along with the different methods and agents used for the same.

  4. Lysenko affair and Polish botany.

    Science.gov (United States)

    Köhler, Piotr

    2011-01-01

    This article describes the slight impact of Lysenkoism upon Polish botany. I begin with an account of the development of plant genetics in Poland, as well as the attitude of scientists and the Polish intelligentsia toward Marxist philosophy prior to the World War II. Next I provide a short history of the introduction and demise of Lysenkoism in Polish science, with a focus on events in botany, in context with key events in Polish science from 1939 to 1958. The article outlines the little effects of Lysenkoism upon botanists and their research, as well as how botanists for the most part rejected what was often termed the "new biology." My paper shows that though Lysenko's theories received political support, and were actively promoted by a small circle of scientists and Communist party activists, they were never accepted by most botanists. Once the political climate in Poland altered after the events of 1956, Lysenko's theories were immediately abandoned.

  5. Laser polishing for topography management of accelerator cavity surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Liang [College of William and Mary, Williamsburg, VA (United States); Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Klopf, J. Mike [College of William and Mary, Williamsburg, VA (United States); Reece, Charles E. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Kelley, Michael J. [College of William and Mary, Williamsburg, VA (United States); Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

    2015-07-20

    Improved energy efficiency and reduced cost are greatly desired for advanced particle accelerators. Progress toward both can be made by atomically-smoothing the interior surface of the niobium superconducting radiofrequency accelerator cavities at the machine's heart. Laser polishing offers a green alternative to the present aggressive chemical processes. We found parameters suitable for polishing niobium in all surface states expected for cavity production. As a result, careful measurement of the resulting surface chemistry revealed a modest thinning of the surface oxide layer, but no contamination.

  6. Integrated amplifying circuit with MOS transistors

    Energy Technology Data Exchange (ETDEWEB)

    Baylac, B; Merckel, G; Meunier, P

    1974-01-25

    The invention relates to a feedback-pass-band amplifier with MOS-transistors. The differential stage of conventional amplifiers is changed into an adding state, whereas the differential amplification stages are changed into amplifier inverter stages. All MOS transistors used in that amplifier are of similar configuration and are interdigitized, whereby the operating speed dispersion is reduced. This can be applied to obtaining a measurement channel for proportional chambers.

  7. MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity.

    Science.gov (United States)

    Yang, Jaehyun; Kwak, Hyena; Lee, Youngbin; Kang, Yu-Seon; Cho, Mann-Ho; Cho, Jeong Ho; Kim, Yong-Hoon; Jeong, Seong-Jun; Park, Seongjun; Lee, Hoo-Jeong; Kim, Hyoungsub

    2016-04-06

    We introduce an amorphous indium-gallium-zinc-oxide (a-IGZO) heterostructure phototransistor consisting of solution-based synthetic molybdenum disulfide (few-layered MoS2, with a band gap of ∼1.7 eV) and sputter-deposited a-IGZO (with a band gap of ∼3.0 eV) films as a novel sensing element with a broad spectral responsivity. The MoS2 and a-IGZO films serve as a visible light-absorbing layer and a high mobility channel layer, respectively. Spectroscopic measurements reveal that appropriate band alignment at the heterojunction provides effective transfer of the visible light-induced electrons generated in the few-layered MoS2 film to the underlying a-IGZO channel layer with a high carrier mobility. The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS2 film with a small band gap prepared through a large-area synthetic route. The MoS2-IGZO heterojunction phototransistors exhibit a photoresponsivity of approximately 1.7 A/W at a wavelength of 520 nm (an optical power of 1 μW) with excellent time-dependent photoresponse dynamics.

  8. Surface analysis of polished fused-silica laser lenses by ion-scattering spectrometry

    International Nuclear Information System (INIS)

    Orvek, K.; Steward, S.A.

    1982-01-01

    New advances in high-powered glass lasers, particularly the NOVA system, have resulted in a need for lenses having higher damage threshold values than those now available. It is currently thought that surface contaminants on the lenses are responsible for initiating part of the damage. These contaminants are apparently introduced during the final polishing stages. In this study, we used ion-scattering spectrometry (ISS) to identify contaminants arising through the use of different polishing techniques. Five lenses were studied, each having undergone different polishing procedures. The first lens was not polished after receiving it from the manfacturer (No. 381). Ion microprobe data were available for this lens, and they were compared to ISS results. The second lens had been polished with rouge, a polishing compound no longer in use (No. 796). This sample served as a further check on the ISS results. The third lens was studied as received from the manufacturer - with no handling or cleaning (No. 802). The final two lenses had both been polished using high-purity ceria, cerium oxide (No. 800 and No. 801). The difference between these two was that No. 800 was polished using a nylon lap, and No. 801 was polished using pitch as a lap. The 800-series lenses were all made from the same batch, and constituted the major part of the investigation

  9. Polish Toxic Currency Options

    Directory of Open Access Journals (Sweden)

    Waldemar Gontarski

    2009-06-01

    Full Text Available Toxic currency options are defined on the basis of the opposition to the nature (essence of an option contract, which is justified in terms of norms founded on the general law clause of characteristics (nature of a relation (which represents an independent premise for imposing restrictions on the freedom of contracts. So-understood toxic currency options are unlawful. Indeed they contravene iuris cogentis regulations. These include for instance option contracts, which are concluded with a bank, if the bank has not informed about option risk before concluding the contract; or the barrier options, which focus only on the protection of bank’s interests. Therefore, such options may appear to be invalid. Therefore, performing contracts for toxic currency options may be qualified as a criminal mismanagement. For the sake of security, the manager should then take into consideration filing a claim for stating invalidity (which can be made in a court verdict. At the same time, if the supervisory board member in a commercial company, who can also be a subject to mismanagement offences, commits an omission involving lack of reaction (for example, if he/she fails to notify of the suspected offence committed by the management board members acting to the company’s detriment when the management board makes the company conclude option contracts which are charged with absolute invalidity the supervisory board member so acting may be considered to act to the company’s detriment. In the most recent Polish jurisprudence and judicature the standard of a “good host” is treated to be the last resort for determining whether the manager’s powers resulting from criminal regulations were performed. The manager of the exporter should not, as a rule, issue any options. Issuing options always means assuming an obligation. In the case of currency put options it is an absolute obligation to purchase a given amount in euro at exchange rate set in advance. On the

  10. Changes in the composition, structure and friction property of sputtered MoS2 films by LEO environment exposure

    International Nuclear Information System (INIS)

    Gao, Xiaoming; Hu, Ming; Sun, Jiayi; Fu, Yanlong; Yang, Jun; Liu, Weimin; Weng, Lijun

    2015-01-01

    Highlights: • Sputtered MoS 2 films were exposed in real low earth orbit (LEO) environment. • LEO exposure resulted in the oxidation and S loss of MoS 2 film surface. • Depth affected by the LEO exposure was limited within 10 nm. • The exposed MoS 2 film exhibited a slight increase in friction coefficient at initial sliding stage. - Abstract: Radio frequency-sputtered MoS 2 films had been exposed for 43.5 h in real low earth orbit (LEO) space environment by a space environment exposure device (SEED) aboard China Shenzhou-7 manned spaceship. The composition, morphology, phase structure and friction property of the exposed films were investigated using X-ray photoelectron spectroscope (XPS), X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), X-ray energy-dispersive spectroscopy (EDS) and ball-on-disk tribometer. XRD and EDS results revealed that the as-deposited MoS 2 films were characterized by a MoS x O y phase structure, in which x and y values were determined to be ∼0.65 and 1.24, respectively. XPS analysis revealed that due to space atomic oxygen attack, the film surface was oxidized to MoO 3 and MoS x O y with higher O concentration, while the partial S was lost. However, the affected depth was restricted within the surface layer because of protective function of the oxidation layer. As a result, the friction coefficient only exhibited a slight increase at initial stage of sliding friction

  11. Polish-German bilingualism at school. A Polish perspective

    Directory of Open Access Journals (Sweden)

    Pulaczewska, Hanna

    2014-03-01

    Full Text Available This article presents the institutional frames for the acquisition of Polish literacy skills in Germany and the maintenance of Polish-German bilingualism after the repatriation of bilingual children to Poland. These processes are examined in the context of recent developments in the European domestic job market. While the European Union has placed proficiency in several languages among its educational objectives, and foreign languages have been made obligatory school subjects in all member countries, the potential advantages of internal European migrations for producing high-proficiency bilinguals are being ignored. Bilingualism resulting from migration and biculturalism enjoys little social prestige in the host countries. In Germany, there is significant regional variation in how school authorities react to challenges posed by the presence of minority languages. In many cases, the linguistic potential of many second-generation migrants and re-emigrants gets largely wasted because of lacking interest and incentives from German and Polish institutions alike.

  12. Ionizing radiation M.O.S. dosimeters: sensibility and stability

    International Nuclear Information System (INIS)

    Gessinn, F.

    1993-12-01

    This thesis is a contribution to the study of the ionizing radiation responsivity of P.O.M.S. dosimeters. Unlike the development of processing hardening techniques, our works goal were to increase, on the one hand, the M.O.S. dosimeters sensitivity in order to detect small radiation doses and on the other hand, the stability with time and temperature of the devices, to minimize the absorbed-dose estimation errors. With this aim in mind, an analysis of all processing parameters has been carried out: the M.O.S. dosimeter sensitivity is primarily controlled by the gate oxide thickness and the irradiation electric field. Thus, P.M.O.S. transistors with 1 and 2 μm thick silica layers have been fabricated for our experiments. The radiation response of our devices in the high-field mode satisfactorily fits a D ox 2 power law. The maximum sensitivity achieved (9,2 V/Gy for 2μm devices) is close to the ideal value obtained when considering only an unitary carrier-trapping level, and allows to measure about 10 -2 Gy radiation doses. Read-time stability has been evaluated under bias-temperature stress conditions: experiments underscore slow fading, corresponding to 10 -3 Gy/h. The temperature response has also been studied: the analytical model we have developed predicts M.O.S. transistors threshold voltage variations over the military specifications range [-50 deg. C, + 150 deg. C]. Finally, we have investigated the possibilities of irradiated dosimeters thermal annealing for reusing. It appears clearly that radiation-induced damage annealing is strongly gate bias dependent. Furthermore, dosimeters radiation sensitivity seems not to be affected by successive annealings. (author). 146 refs., 58 figs., 9 tabs

  13. Role of oxygen adsorption in modification of optical and surface electronic properties of MoS2

    Science.gov (United States)

    Shakya, Jyoti; Kumar, Sanjeev; Mohanty, Tanuja

    2018-04-01

    In this work, the effect of surface oxidation of molybdenum disulfide (MoS2) nanosheets induced by hydrogen peroxide (H2O2) on the work function and bandgap of MoS2 has been investigated for tuning its optical and electronic properties. Transmission electron microscopy studies reveal the existence of varying morphologies of few layers of MoS2 as well as quantum dots due to the different absorbing effects of two mixed solvents on MoS2. The X-ray diffraction, electron paramagnetic resonance, and Raman studies indicate the presence of physical as well as chemical adsorption of oxygen atoms in MoS2. The photoluminescence spectra show the tuning of bandgap arising from the passivation of trapping centers leading to radiative recombination of excitons. The value of work function obtained from scanning Kelvin probe microscopy of MoS2 in mixed solvents of H2O2 and N-methyl-2-pyrrolidone increases with an increase in the concentration of H2O2. A linear relationship could be established between H2O2 content in mixed solvent and measured values of work function. This work gives the alternative route towards the commercial use of defect engineered transition metal dichalcogenide materials in diverse fields.

  14. Sensing roughness and polish direction

    DEFF Research Database (Denmark)

    Jakobsen, Michael Linde; Olesen, Anders Sig; Larsen, Henning Engelbrecht

    2016-01-01

    As a part of the work carried out in a project supported by the Danish Council for Technology and Innovation, we have investigated the option of smoothing standard CNC-machined surfaces. In the process of constructing optical prototypes, involving custom-designed optics, the development cost...... and time consumption can become prohibitive in a research budget. Machining the optical surfaces directly is expensive and time consuming. Alternatively, a more standardized and cheaper machining method can be used, calling for the object to be manually polished. During the polishing process, the operator...... needs information about the RMS-value of the surface roughness and the current direction of the scratches introduced by the polishing process. The RMS-value indicates to the operator how far he is from the final finish, and the scratch orientation is often specified by the customer in order to avoid...

  15. Cannabinoids cases in polish athletes

    OpenAIRE

    A Pokrywka; Z Obmiński; D Kwiatkowska; R Grucza

    2009-01-01

    The aim of this study was to investigate the number of cases and the profiles of Polish athletes who had occasionally been using marijuana or hashish throughout the period of 1998-2004, with respect to: sex, age, and discipline of sport as well as the period of testing (in- and out-of-competition). Results of the study were compared with some data reported by other WADA accredited anti-doping laboratories. Totally, 13 631 urine samples taken from Polish athletes of both sexes, aged 10-67 year...

  16. Graphite Composite Panel Polishing Fixture

    Science.gov (United States)

    Hagopian, John; Strojny, Carl; Budinoff, Jason

    2011-01-01

    The use of high-strength, lightweight composites for the fixture is the novel feature of this innovation. The main advantage is the light weight and high stiffness-to-mass ratio relative to aluminum. Meter-class optics require support during the grinding/polishing process with large tools. The use of aluminum as a polishing fixture is standard, with pitch providing a compliant layer to allow support without deformation. Unfortunately, with meter-scale optics, a meter-scale fixture weighs over 120 lb (.55 kg) and may distort the optics being fabricated by loading the mirror and/or tool used in fabrication. The use of composite structures that are lightweight yet stiff allows standard techniques to be used while providing for a decrease in fixture weight by almost 70 percent. Mounts classically used to support large mirrors during fabrication are especially heavy and difficult to handle. The mount must be especially stiff to avoid deformation during the optical fabrication process, where a very large and heavy lap often can distort the mount and optic being fabricated. If the optic is placed on top of the lapping tool, the weight of the optic and the fixture can distort the lap. Fixtures to support the mirror during fabrication are often very large plates of aluminum, often 2 in. (.5 cm) or more in thickness and weight upwards of 150 lb (68 kg). With the addition of a backing material such as pitch and the mirror itself, the assembly can often weigh over 250 lb (.113 kg) for a meter-class optic. This innovation is the use of a lightweight graphite panel with an aluminum honeycomb core for use as the polishing fixture. These materials have been used in the aerospace industry as structural members due to their light weight and high stiffness. The grinding polishing fixture consists of the graphite composite panel, fittings, and fixtures to allow interface to the polishing machine, and introduction of pitch buttons to support the optic under fabrication. In its

  17. Parametric Conversion Using Custom MOS Varactors

    Directory of Open Access Journals (Sweden)

    Iniewski Krzysztof (Kris

    2006-01-01

    Full Text Available The possible role of customized MOS varactors in amplification, mixing, and frequency control of future millimeter wave CMOS RFICs is outlined. First, the parametric conversion concept is revisited and discussed in terms of modern RF communications systems. Second, the modeling, design, and optimization of MOS varactors are reconsidered in the context of their central role in parametric circuits. Third, a balanced varactor structure is proposed for robust oscillator frequency control in the presence of large extrinsic noise expected in tightly integrated wireless communicators. Main points include the proposal of a subharmonic pumping scheme based on the MOS varactor, a nonequilibrium elastance-voltage model, optimal varactor layout suggestions, custom m-CMOS varactor design and measurement, device-level balanced varactor simulations, and parametric circuit evaluation based on measured device characteristics.

  18. Electron microscopy studies on MoS2 nanocrystals

    DEFF Research Database (Denmark)

    Hansen, Lars Pilsgaard

    Industrial-style MoS2-based hydrotreating catalysts are studied using electron microscopy. The MoS2 nanostructures are imaged with single-atom sensitivity to reveal the catalytically important edge structures. Furthermore, the in-situ formation of MoS2 crystals is imaged for the first time....

  19. Cobalt micro-magnet integration on silicon MOS quantum dots

    Science.gov (United States)

    Camirand Lemyre, Julien; Rochette, Sophie; Anderson, John; Manginell, Ronald P.; Pluym, Tammy; Ward, Dan; Carroll, Malcom S.; Pioro-Ladrière, Michel

    Integration of cobalt micro-magnets on silicon metal-oxide-semiconductor (MOS) quantum dot devices has been investigated. The micro-magnets are fabricated in a lift-off process with e-beam lithography and deposited directly on top of an etched poly-silicon gate stack. Among the five resist stacks tested, one is found to be compatible with our MOS specific materials (Si and SiO2) . Moreover, devices with and without additional Al2O3 insulating layer show no additional gate leakage after processing. Preliminary transport data indicates electrostatic stability of our devices with integrated magnets. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  20. Reevaluating the worst-case radiation response of MOS transistors

    Science.gov (United States)

    Fleetwood, D. M.

    Predicting worst-case response of a semiconductor device to ionizing radiation is a formidable challenge. As processes change and MOS gate insulators become thinner in advanced VLSI and VHSIC technologies, failure mechanisms must be constantly re-examined. Results are presented of a recent study in which more than 100 MOS transistors were monitored for up to 300 days after Co-60 exposure. Based on these results, a reevaluation of worst-case n-channel transistor response (most positive threshold voltage shift) in low-dose-rate and postirradiation environments is required in many cases. It is shown for Sandia hardened n-channel transistors with a 32 nm gate oxide, that switching from zero-volt bias, held during the entire radiation period, to positive bias during anneal clearly leads to a more positive threshold voltage shift (and thus the slowest circuit response) after Co-60 exposure than the standard case of maintaining positive bias during irradiation and anneal. It is concluded that irradiating these kinds of transistors with zero-volt bias, and annealing with positive bias, leads to worst-case postirradiation response. For commercial devices (with few interface states at doses of interest), on the other hand, device response only improves postirradiation, and worst-case response (in terms of device leakage) is for devices irradiated under positive bias and annealed with zero-volts bias.

  1. Fabrication of Z-scheme Ag3PO4/MoS2 composites with enhanced photocatalytic activity and stability for organic pollutant degradation

    International Nuclear Information System (INIS)

    Zhu, Chaosheng; Zhang, Lu; Jiang, Bo; Zheng, Jingtang; Hu, Ping; Li, Sujuan; Wu, Mingbo; Wu, Wenting

    2016-01-01

    Highlights: • Ag 3 PO 4 /MoS 2 composite photocatalysts were prepared by precipitation method. • The composites showed enhanced visible-light photocatalytic activity. • The photocorrosion of Ag 3 PO 4 was inhibited due to the introduction of MoS 2 . • Z-scheme mechanism was proposed to explain the enhanced photoactivity. - Abstract: In this study, highly efficient visible-light-driven Ag 3 PO 4 /MoS 2 composite photocatalysts with different weight ratios of MoS 2 were prepared via the ethanol-water mixed solvents precipitation method and characterized by ICP, XRD, HRTEM, FE-SEM, BET, XPS, UV–vis DRS and PL analysis. Under visible-light irradiation, Ag 3 PO 4 /MoS 2 composites exhibit excellent photocatalytic activity towards the degradation of organic pollutants in aqueous solution. The optimal composite with 0.648 wt% MoS 2 content exhibits the highest photocatalytic activity, which can degrade almost all MB under visible-light irradiation within 60 min. Recycling experiments confirmed that the Ag 3 PO 4 /MoS 2 catalysts had superior cycle performance and stability. The photocatalytic activity enhancement of Ag 3 PO 4 /MoS 2 photocatalysts can be mainly ascribed to the efficient separation of photogenerated charge carriers and the stronger oxidation and reduction ability through a Z-scheme system composed of Ag 3 PO 4 , Ag and MoS 2 , in which Ag particles act as the charge separation center. The high photocatalytic stability is due to the successful inhibition of the photocorrosion of Ag 3 PO 4 by transferring the photogenerated electrons of Ag 3 PO 4 to MoS 2 . The evidence of the Z-scheme photocatalytic mechanism of the composite photocatalysts could be obtained from the active species trapping experiments and the photoluminescence technique.

  2. Chemical Mechanical Polishing of Ruthenium, Cobalt, and Black Diamond Films

    Science.gov (United States)

    Peethala, Brown Cornelius

    Ta/TaN bilayer serves as the diffusion barrier as well as the adhesion promoter between Cu and the dielectric in 32 nm technology devices. A key concern of future technology devices (layer (vs. a bilayer of Ta/TaN) to act as a barrier. During patterning, they need to be planarized using conventional chemical mechanical polishing (CMP) to achieve a planar surface. However, CMP of these new barrier materials requires novel slurry compositions that provide adequate selectivity towards Cu and dielectric films, and minimize galvanic corrosion. Apart from the application as a barrier, Ru also has been proposed as a lower electrode material in metal-insulator-metal capacitors where high (> 50 nm/min) Ru removal rates (RRs) are required and as a stop layer in magnetic recording head fabrication where low (hydroxide (KOH). It was also determined that increased the ionic strength is not responsible for the observed increase in Ru removal rate. Benzotirazole (BTA) and ascorbic acid were added to the slurry to reduce the open circuit potential (Eoc) difference between Cu and Ru to ˜20 mV from about 550 mV in the absence of additives. A removal mechanism with KIO4 as the oxidizing agent is proposed based on the formation of several ruthenium oxides, some of which formed residues on the polishing pad below a pH of ˜7. Next, a colloidal silica-based slurry with hydrogen peroxide (H 2O2) as the oxidizer (1 wt%), and arginine (0.5 wt%) as the complexing agent was developed to polish Co at pH 10. The Eoc between Cu and Co at the above conditions was reduced to ˜20 mV compared to ˜250 mV in the absence of additives, suggestive of reduced galvanic corrosion during the Co polishing. The slurry also has the advantages of good post-polish surface quality at pH 10, and no dissolution rate. BTA at a concentration of 5mM in this slurry inhibited Cu dissolution rates and yielded a Cu/Co RR ratio of ˜0.8:1 while the open potential difference between Cu and Co was further reduced to ˜10

  3. Polish-Bulgarian-Russian, Bulgarian-Polish-Russian or Russian-Bulgarian-Polish dictionary?

    Directory of Open Access Journals (Sweden)

    Violetta Koseska-Toszewa

    2015-11-01

    Full Text Available Polish-Bulgarian-Russian, Bulgarian-Polish-Russian or Russian-Bulgarian-Polish dictionary? The trilingual dictionary (M. Duszkin, V. Koseska, J. Satoła and A. Tzoneva is being elaborated based on a working Polish-Bulgarian-Russian electronic parallel corpus authored by Maksim Duszkin, Violetta Koseska-Toszewa and Joanna Satoła-Staśkowiak, and works by A. Tzoneva. It is the first corpus comparing languages belonging to three different Slavic language groups: western, southern and eastern. Works on the dictionary are based on Gramatyka konfrontatywna bułgarsko-polska (Bulgarian-Polish confrontative grammar and the proposed there semantic-oriented interlanguage. Two types of classifiers have been introduced into the dictionary: classic and semantic. The trilingual dictionary will present a consistent and homogeneous set of facts of grammar and semantics. The Authors point out that in a traditional dictionary it is not clear for example whether aspect should be understood as imperfective / perfective form of a verb or as its meaning. Therefore in the dictionary forms and meaning are separated in a regular way. Imperfective verb form has two meanings: state and configuration of states and events culminating in state. Also perfective verb form has two meanings: event and configuration of states and events culminating in event. These meanings are described by the semantic classifiers, respectively, state and event, state1 and event1. The way of describing language units, mentioned in the article, gives a possibility to present language material (Polish, Bulgarian, Russian in any required order, hence the article’s title.

  4. Achieving Ohmic Contact for High-quality MoS2 Devices on Hexagonal Boron Nitride

    Science.gov (United States)

    Cui, Xu

    MoS2, among many other transition metal dichalcogenides (TMDCs), holds great promise for future applications in nano-electronics, opto-electronics and mechanical devices due to its ultra-thin nature, flexibility, sizable band-gap, and unique spin-valley coupled physics. However, there are two main challenges that hinder careful study of this material. Firstly, it is hard to achieve Ohmic contacts to mono-layer MoS2, particularly at low temperatures (T) and low carrier densities. Secondly, materials' low quality and impurities introduced during the fabrication significantly limit the electron mobility of mono- and few-layer MoS2 to be substantially below theoretically predicted limits, which has hampered efforts to observe its novel quantum transport behaviours. Traditional low work function metals doesn't necessary provide good electron injection to thin MoS2 due to metal oxidation, Fermi level pinning, etc. To address the first challenge, we tried multiple contact schemes and found that mono-layer hexagonal boron nitride (h-BN) and cobalt (Co) provide robust Ohmic contact. The mono-layer spacer serves two advantageous purposes: it strongly interacts with the transition metal, reducing its work function by over 1 eV; and breaks the metal-TMDCs interaction to eliminate the interfacial states that cause Fermi level pinning. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kohm.um at a carrier density of 5.3x10. 12/cm. 2. Similar to graphene, eliminating all potential sources of disorder and scattering is the key to achieving high performance in MoS2 devices. We developed a van der Waals heterostructure device platform where MoS2 layers are fully encapsulated within h-BN and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. The h-BN-encapsulation provides excellent protection from environmental factors, resulting in

  5. Cannabinoids cases in polish athletes

    Directory of Open Access Journals (Sweden)

    A Pokrywka

    2009-07-01

    Full Text Available The aim of this study was to investigate the number of cases and the profiles of Polish athletes who had occasionally been using marijuana or hashish throughout the period of 1998-2004, with respect to: sex, age, and discipline of sport as well as the period of testing (in- and out-of-competition. Results of the study were compared with some data reported by other WADA accredited anti-doping laboratories. Totally, 13 631 urine samples taken from Polish athletes of both sexes, aged 10-67 years, performing 46 disciplines of sport were tested. Cannabinoids were detected in 267 samples. Among Polish athletes the relative number of positive THC (tetrahydrocannabinol samples was one of the highest in Europe. The group of young Polish athletes (aged 16-24 years was the most THC-positive. THC-positive cases were noted more frequently in male athletes tested during out of competitions. The so-called contact sports (rugby, ice hockey, skating, boxing, badminton, body building and acrobatic sports were those sports, where the higher risk of cannabis use was observed. The legal interpretation of some positive cannabinoids results would be difficult because of some accidental and unintentional use of the narcotics by sportsmen. It was concluded that national anti-doping organizations (NADO’s, which are competent to judge whether the anti-doping rules were violated, should take into account the possibility of non-intentional doping use of cannabinoids via passive smoking of marijuana.

  6. Chemical etching and polishing of InP

    International Nuclear Information System (INIS)

    Kurth, E.; Reif, A.; Gottschalch, V.; Finster, J.; Butter, E.

    1988-01-01

    This paper describes possibilities of several chemical preparations for the selective cleaning of InP surfaces. The investigations of the surface states after the chemical treatment were carried out by means of XPS measurements. A pre-etching with (NH 4 ) 2 S 2 O 8 :H 2 SO 4 :H 2 O and a polishing with 1% bromine in methanol produce optically smooth (100)-and (111) P surfaces free of oxides. (author)

  7. Radiation-induced interface state generation in MOS devices with reoxidised nitrided SiO2 gate dielectrics

    International Nuclear Information System (INIS)

    Lo, G.Q.; Shih, D.K.; Ting, W.; Kwong, D.L.

    1989-01-01

    In this letter, the radiation-induced interface state generation ΔD it in MOS devices with reoxidised nitrided gate oxides has been studied. The reoxidised nitrided oxides were fabricated by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO 2 . The devices were irradiated by exposure to X-rays at doses of 0.5-5.0 Mrad (Si). It is found that the RTO process improves the radiation hardness of RTN oxides in terms of interface state generation. The enhanced interface ''hardness'' of reoxidised nitrided oxides is attributed to the strainless interfacial oxide regrowth or reduction of hydrogen concentration during RTO of RTN oxides. (author)

  8. A compact plasmonic MOS-based 2×2 electro-optic switch

    Directory of Open Access Journals (Sweden)

    Ye Chenran

    2015-01-01

    Full Text Available We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, indium-tin-oxide, is altered via shifting the plasma frequency due to carrier accumulation inside the waveguide-based MOS structure. This light manipulation mechanism controls the transmission direction of transverse magnetic polarized light into either a CROSS or BAR waveguide port. The extinction ratio of 18 (7 dB for the CROSS (BAR state, respectively, is achieved via a gating voltage bias. The ultrafast broadband fJ/bit device allows for seamless integration with silicon-on-insulator platforms for low-cost manufacturing.

  9. Mechanistic, kinetic, and processing aspects of tungsten chemical mechanical polishing

    Science.gov (United States)

    Stein, David

    This dissertation presents an investigation into tungsten chemical mechanical polishing (CMP). CMP is the industrially predominant unit operation that removes excess tungsten after non-selective chemical vapor deposition (CVD) during sub-micron integrated circuit (IC) manufacture. This work explores the CMP process from process engineering and fundamental mechanistic perspectives. The process engineering study optimized an existing CMP process to address issues of polish pad and wafer carrier life. Polish rates, post-CMP metrology of patterned wafers, electrical test data, and synergy with a thermal endpoint technique were used to determine the optimal process. The oxidation rate of tungsten during CMP is significantly lower than the removal rate under identical conditions. Tungsten polished without inhibition during cathodic potentiostatic control. Hertzian indenter model calculations preclude colloids of the size used in tungsten CMP slurries from indenting the tungsten surface. AFM surface topography maps and TEM images of post-CMP tungsten do not show evidence of plow marks or intergranular fracture. Polish rate is dependent on potassium iodate concentration; process temperature is not. The colloid species significantly affects the polish rate and process temperature. Process temperature is not a predictor of polish rate. A process energy balance indicates that the process temperature is predominantly due to shaft work, and that any heat of reaction evolved during the CMP process is negligible. Friction and adhesion between alumina and tungsten were studied using modified AFM techniques. Friction was constant with potassium iodate concentration, but varied with applied pressure. This corroborates the results from the energy balance. Adhesion between the alumina and the tungsten was proportional to the potassium iodate concentration. A heuristic mechanism, which captures the relationship between polish rate, pressure, velocity, and slurry chemistry, is presented

  10. Energy dependence of pMOS dosemeters

    Energy Technology Data Exchange (ETDEWEB)

    Savic, Z. [Military Technical Institute, Belgrade (Yugoslavia); Stankovic, S.; Kovacevic, M.; Petrovic, M. [Institute of Nuclear Sciences, Belgrade (Yugoslavia). Radiation Protection Dept.

    1996-10-01

    The results are presented of experimental work and numerical simulations of the energy response for pMOS dosimetric transistors in their custom packages. Specially produced radiation soft pMOS transistors were used in this experimental work. The irradiation of pMOS dosemeters was done using {sup 60}Co and {sup 137}Cs sources, a dosimetric X ray unit, and a radiotherapeutic linear accelerator in the range of photon energies from 21 keV to 8 MeV. The results show that package geometry and materials can significantly affect and smooth the energy dependence of pMOS transistors and that in custom transistor packages they are not tissue-equivalent dosemeters. Their response in the photon energy range of 45 to 250 keV is significantly larger than it should be (maximum dose enhancement factor can be as high as 8) and some energy compensation techniques must be used in order to fulfill the requirements of corresponding standards. (Author).

  11. Enhancement of photovoltaic response in multilayer MoS2 induced by plasma doping.

    Science.gov (United States)

    Wi, Sungjin; Kim, Hyunsoo; Chen, Mikai; Nam, Hongsuk; Guo, L Jay; Meyhofer, Edgar; Liang, Xiaogan

    2014-05-27

    Layered transition-metal dichalcogenides hold promise for making ultrathin-film photovoltaic devices with a combination of excellent photovoltaic performance, superior flexibility, long lifetime, and low manufacturing cost. Engineering the proper band structures of such layered materials is essential to realize such potential. Here, we present a plasma-assisted doping approach for significantly improving the photovoltaic response in multilayer MoS2. In this work, we fabricated and characterized photovoltaic devices with a vertically stacked indium tin oxide electrode/multilayer MoS2/metal electrode structure. Utilizing a plasma-induced p-doping approach, we are able to form p-n junctions in MoS2 layers that facilitate the collection of photogenerated carriers, enhance the photovoltages, and decrease reverse dark currents. Using plasma-assisted doping processes, we have demonstrated MoS2-based photovoltaic devices exhibiting very high short-circuit photocurrent density values up to 20.9 mA/cm(2) and reasonably good power-conversion efficiencies up to 2.8% under AM1.5G illumination, as well as high external quantum efficiencies. We believe that this work provides important scientific insights for leveraging the optoelectronic properties of emerging atomically layered two-dimensional materials for photovoltaic and other optoelectronic applications.

  12. Study of performance scaling of 22-nm epitaxial delta-doped channel MOS transistor

    Science.gov (United States)

    Sengupta, Sarmista; Pandit, Soumya

    2015-06-01

    Epitaxial delta-doped channel (EδDC) profile is a promising approach for extending the scalability of bulk metal oxide semiconductor (MOS) technology for low-power system-on-chip applications. A comparative study between EδDC bulk MOS transistor with gate length Lg = 22 nm and a conventional uniformly doped channel (UDC) bulk MOS transistor, with respect to various digital and analogue performances, is presented. The study has been performed using Silvaco technology computer-aided design device simulator, calibrated with experimental results. This study reveals that at smaller gate length, EδDC transistor outperforms the UDC transistor with respect to various studied performances. The reduced contribution of the lateral electric field in the channel plays the key role in this regard. Further, the carrier mobility in EδDC transistor is higher compared to UDC transistor. For moderate gate and drain bias, the impact ionisation rate of the carriers for EδDC MOS transistor is lower than that of the UDC transistor. In addition, at 22 nm, the performances of a EδDC transistor are competitive to that of an ultra-thin body silicon-on-insulator transistor.

  13. Electron transfer kinetics on natural crystals of MoS2 and graphite.

    Science.gov (United States)

    Velický, Matěj; Bissett, Mark A; Toth, Peter S; Patten, Hollie V; Worrall, Stephen D; Rodgers, Andrew N J; Hill, Ernie W; Kinloch, Ian A; Novoselov, Konstantin S; Georgiou, Thanasis; Britnell, Liam; Dryfe, Robert A W

    2015-07-21

    Here, we evaluate the electrochemical performance of sparsely studied natural crystals of molybdenite and graphite, which have increasingly been used for fabrication of next generation monolayer molybdenum disulphide and graphene energy storage devices. Heterogeneous electron transfer kinetics of several redox mediators, including Fe(CN)6(3-/4-), Ru(NH3)6(3+/2+) and IrCl6(2-/3-) are determined using voltammetry in a micro-droplet cell. The kinetics on both materials are studied as a function of surface defectiveness, surface ageing, applied potential and illumination. We find that the basal planes of both natural MoS2 and graphite show significant electroactivity, but a large decrease in electron transfer kinetics is observed on atmosphere-aged surfaces in comparison to in situ freshly cleaved surfaces of both materials. This is attributed to surface oxidation and adsorption of airborne contaminants at the surface exposed to an ambient environment. In contrast to semimetallic graphite, the electrode kinetics on semiconducting MoS2 are strongly dependent on the surface illumination and applied potential. Furthermore, while visibly present defects/cracks do not significantly affect the response of graphite, the kinetics on MoS2 systematically accelerate with small increase in disorder. These findings have direct implications for use of MoS2 and graphene/graphite as electrode materials in electrochemistry-related applications.

  14. Effect of Dielectric Interface on the Performance of MoS2 Transistors.

    Science.gov (United States)

    Li, Xuefei; Xiong, Xiong; Li, Tiaoyang; Li, Sichao; Zhang, Zhenfeng; Wu, Yanqing

    2017-12-27

    Because of their wide bandgap and ultrathin body properties, two-dimensional materials are currently being pursued for next-generation electronic and optoelectronic applications. Although there have been increasing numbers of studies on improving the performance of MoS 2 field-effect transistors (FETs) using various methods, the dielectric interface, which plays a decisive role in determining the mobility, interface traps, and thermal transport of MoS 2 FETs, has not been well explored and understood. In this article, we present a comprehensive experimental study on the effect of high-k dielectrics on the performance of few-layer MoS 2 FETs from 300 to 4.3 K. Results show that Al 2 O 3 /HfO 2 could boost the mobility and drain current. Meanwhile, MoS 2 transistors with Al 2 O 3 /HfO 2 demonstrate a 2× reduction in oxide trap density compared to that of the devices with the conventional SiO 2 substrate. Also, we observe a negative differential resistance effect on the device with 1 μm-channel length when using conventional SiO 2 as the gate dielectric due to self-heating, and this is effectively eliminated by using the Al 2 O 3 /HfO 2 gate dielectric. This dielectric engineering provides a highly viable route to realizing high-performance transition metal dichalcogenide-based FETs.

  15. A Novel SPM Probe with MOS Transistor and Nano Tip for Surface Electric Properties

    International Nuclear Information System (INIS)

    Lee, Sang H; Lim, Geunbae; Moon, Wonkyu

    2007-01-01

    In this paper, the novel SPM (Scanning Probe Microscope) probe with the planar MOS (Metal-Oxide-Semiconductor) transistor and the FIB (Focused Ion Beam) nano tip is fabricated for the surface electric properties. Since the MOS transistor has high working frequency, the device can overcome the speed limitation of EFM (Electrostatic Force Microscope) system. The sensitivity is also high, and no bulky device such as lock-in-amplifier is required. Moreover, the nano tip with nanometer scale tip radius is fabricated with FIB system, and the resolution can be improved. Therefore, the probe can rapidly detect small localized electric properties with high sensitivity and high resolution. The MOS transistor is fabricated with the common semiconductor process, and the nano tip is grown by the FIB system. The planar structure of the MOS transistor makes the fabrication process easier, which is the advantage on the commercial production. Various electric signals are applied using the function generator, and the measured data represent the well-established electric properties of the device. It shows the promising aspect of the local surface electric property detection with high sensitivity and high resolution

  16. Origin of the n -type and p -type conductivity of MoS 2 monolayers on a SiO 2 substrate

    KAUST Repository

    Dolui, Kapildeb

    2013-04-02

    Ab initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO 2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free substrate, the oxide plays an insignificant role since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle of the SiO2 band gap. However, if Na impurities and O dangling bonds are introduced at the SiO2 surface, these lead to localized states, which modulate the conductivity of the MoS2 monolayer from n- to p-type. Our results show that the conductive properties of MoS2 deposited on SiO 2 are mainly determined by the detailed structure of the MoS 2/SiO2 interface, and suggest that doping the substrate can represent a viable strategy for engineering MoS2-based devices. © 2013 American Physical Society.

  17. Effect of polishing instruments and polishing regimens on surface topography and phase transformation of monolithic zirconia: An evaluation with XPS and XRD analysis.

    Science.gov (United States)

    Al-Haj Husain, Nadin; Camilleri, Josette; Özcan, Mutlu

    2016-12-01

    Polishing procedures might alter monolithic zirconia (MZ) surface resulting in phase changes that can be deleterious for clinical performance and antagonist tooth wear. This study investigated the topographical features and phase transformation in MZ after polishing with different regimens simulating the clinical workflow. ​ MZ specimens (Katana Zirconia HT, Kuraray-Noritake) (12×12×1.8 mm(3)) were grinded and polished using one of the five systems assessed: BG: Silicone carbide polishers (Brownie, Greenie, Super Greenie); CG: Diamond impregnated ceramic polisher kit (Ceragloss); EV: Synthetically bonded grinder interspersed with diamond (EVE Kit); SL: Urethane coated paper with aluminium oxide grits (Soflex Finishing and Polishing System Kit) and DB: Diamond bur (8 µm). Polished specimens were initially roughened with 220 µm diamond burs (Grinding Bur-GB) (10 s, 160.000160,000 rpm) and considered for baseline measurements. Polishing regimens were performed for 10 s using a slow-speed hand piece under water-cooling except for SL, in a custom made device (750 g; 5000 and 75,000 rpm). Surface roughnesses, phase changes (XRD) were assessed, surface characterization was performed (SEM, EDS). The highest roughness was obtained with the EV system (1.11 µm) compared to those of other systems (0.13-0.4 µm) (pθ and minor peak at 34.94°2θ. While GB, CG, EV, SL and DB exhibited a peak shift to the left, BG demonstrated a right peak shift on the 2θ scale. Monoclinic phase change was not noted in any of the groups. All polishing methods, except BG, exhibited a peak shift towards the lower angles of the 2-theta scale. Since the peak shifts were in the order of fractions of an angle they are attributed to stress formation rather than a phase change in the material. Thus, all polishing systems tested may not be detrimental for the phase transformation of MZ. EV system resulted in the highest roughness and none of the polishing regimens restored the polishability to the

  18. Polish energy-system modernisation

    International Nuclear Information System (INIS)

    Drozdz, M.

    2003-01-01

    The Polish energy-system needs intensive investments in new technologies, which are energy efficient, clean and cost effective. Since the early 1990s, the Polish economy has had practically full access to modern technological devices, equipment and technologies. Introducing new technologies is a difficult task for project teams, constructors and investors. The author presents a set of principles for project teams useful in planning and energy modernisation. Several essential features are discussed: Energy-efficient appliances and systems; Choice of energy carriers, media and fuels; Optimal tariffs, maximum power and installed power; Intelligent, integrated, steering systems; Waste-energy recovery; Renewable-energy recovery. In practice there are several difficulties connected with planning and realising good technological and economic solutions. The author presents his own experiences of energy-system modernisation of industrial processes and building new objects. (Author)

  19. Energy savings in Polish buildings

    Energy Technology Data Exchange (ETDEWEB)

    Markel, L.C.; Gula, A.; Reeves, G.

    1995-12-31

    A demonstration of low-cost insulation and weatherization techniques was a part of phase 1 of the Krakow Clean Fossil Fuels and Energy Efficient Project. The objectives were to identify a cost-effective set of measures to reduce energy used for space heating, determine how much energy could be saved, and foster widespread implementation of those measures. The demonstration project focused on 4 11-story buildings in a Krakow housing cooperative. Energy savings of over 20% were obtained. Most important, the procedures and materials implemented in the demonstration project have been adapted to Polish conditions and applied to other housing cooperatives, schools, and hospitals. Additional projects are being planned, in Krakow and other cities, under the direction of FEWE-Krakow, the Polish Energie Cities Network, and Biuro Rozwoju Krakowa.

  20. SAFETY PLATFORM OF POLISH TRANSPORT

    Directory of Open Access Journals (Sweden)

    Katarzyna CHRUZIK

    2016-03-01

    Full Text Available Analyzing the level of Polish transport safety culture can be seen that it is now dependent on the culture of safety management within the organization and the requirements and recommendations of law in this field for different modes of transport (air, rail, road, water. Of the four basic types of transport requirements are widely developed in the aviation, rail, and water – the sea. In order to harmonize the requirements for transport safety so it appears advisable to develop a platform for exchange of safety information for different modes of transport, and the development of good practices multimodal offering the possibility of improving Polish transport safety. Described in the publication of the proposal in addition to the alignment platform experience and knowledge in the field of transport safety in all its kinds, it can also be a tool for perfecting new operators of public transport.

  1. Polishing compound for plastic surfaces

    Science.gov (United States)

    Stowell, M.S.

    1991-01-01

    This invention is comprised of a polishing compound for plastic materials. The compound includes approximately by approximately by weight 25 to 80 parts at least one petroleum distillate lubricant, 1 to 12 parts mineral spirits, 50 to 155 parts abrasive paste, and 15 to 60 parts water. Preferably, the compound includes approximately 37 to 42 parts at least one petroleum distillate lubricant, up to 8 parts mineral spirits, 95 to 110 parts abrasive paste, and 50 to 55 parts water. The proportions of the ingredients are varied in accordance with the particular application. The compound is used on PLEXIGLAS{trademark}, LEXAN{trademark}, LUCITE{trademark}, polyvinyl chloride (PVC), and similar plastic materials whenever a smooth, clear polished surface is desired.

  2. Careers of young Polish chemists

    OpenAIRE

    Kosmulski, Marek

    2014-01-01

    Typical young Polish scientist is an alumnus of doctoral studies at the same university and department where he/she completed his/her Master degree. The career is continued by receiving a habilitation at the same university and department. Then a holder of habilitation is promoted to a tenured position at the same university and department. Detailed analysis of scientific careers of 154 recent Ph.D. recipients and of 16 habilitation candidates in chemistry from University of Warsaw is present...

  3. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

    Science.gov (United States)

    Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J

    2016-06-09

    Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack.

  4. 19th Polish Control Conference

    CERN Document Server

    Kacprzyk, Janusz; Oprzędkiewicz, Krzysztof; Skruch, Paweł

    2017-01-01

    This volume contains the proceedings of the KKA 2017 – the 19th Polish Control Conference, organized by the Department of Automatics and Biomedical Engineering, AGH University of Science and Technology in Kraków, Poland on June 18–21, 2017, under the auspices of the Committee on Automatic Control and Robotics of the Polish Academy of Sciences, and the Commission for Engineering Sciences of the Polish Academy of Arts and Sciences. Part 1 deals with general issues of modeling and control, notably flow modeling and control, sliding mode, predictive, dual, etc. control. In turn, Part 2 focuses on optimization, estimation and prediction for control. Part 3 is concerned with autonomous vehicles, while Part 4 addresses applications. Part 5 discusses computer methods in control, and Part 6 examines fractional order calculus in the modeling and control of dynamic systems. Part 7 focuses on modern robotics. Part 8 deals with modeling and identification, while Part 9 deals with problems related to security, fault ...

  5. Gold nanoparticles on MoS2 layered crystal flakes

    International Nuclear Information System (INIS)

    Cao, Wei; Pankratov, Vladimir; Huttula, Marko; Shi, Xinying; Saukko, Sami; Huang, Zhongjia; Zhang, Meng

    2015-01-01

    Inorganic layered crystal MoS 2 is considered as one of the most promising and efficient semiconductor materials for future transistors, photoelectronics, and electrocatalysis. To boost MoS 2 -based material applications, one direction is to grow physically and chemically reactive nanoparticles onto MoS 2 . Here we report on a simple route to synthesis crystalized MoS 2 –Au complexes. The gold nanoparticles were grown on MoS 2 flakes through a wet method in the oxygen free environment at room temperature. Nanoparticles with diameters varying from 9 nm to 429 nm were controlled by the molar ratios of MoS 2 and HAuCl 4 precursors. MoS 2 host flakes keep intrinsic honeycomb layered structures and the Au nanoparticles cubic-center crystal microstructures. From product chemical states analysis, the synthesis was found driven by redox reactions between the sulphide and the chloroauric acid. Photoluminescence measurement showed that introducing Au nanoparticles onto MoS 2 stacks substantially prompted excitonic transitions of stacks, as an analogy for doping Si wafers with dopants. Such composites may have potential applications in wide ranges similar as the doped Si. - Highlights: • The Au nanoparticles were decorated on MoS 2 in oxygen free ambiences via a wet method. • The Au nanoparticles are size-controllable and crystalized. • Chemical reaction scheme was clarified. • The MoS 2 –Au complexes have strong photoluminescent properties

  6. Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Seok Hwan Jeong

    2018-03-01

    Full Text Available It is becoming more important for electronic devices to operate stably and reproducibly under harsh environments, such as extremely low and/or high temperatures, for robust and practical applications. Here, we report on the effects of atomic-layer-deposited (ALD aluminum oxide (Al2O3 passivation on multilayer molybdenum disulfide (MoS2 thin-film transistors (TFTs and their temperature-dependent electrical properties, especially at a high temperature range from 293 K to 380 K. With the aid of ultraviolet-ozone treatment, an Al2O3 layer was uniformly applied to cover the entire surface of MoS2 TFTs. Our Al2O3-passivated MoS2 TFTs exhibited not only a dramatic reduction of hysteresis but also enhancement of current in output characteristics. In addition, we investigated the temperature-dependent behaviors of the TFT performance, including intrinsic carrier mobility based on the Y-function method.

  7. Target Capture during Mos1 Transposition*

    Science.gov (United States)

    Pflieger, Aude; Jaillet, Jerôme; Petit, Agnès; Augé-Gouillou, Corinne; Renault, Sylvaine

    2014-01-01

    DNA transposition contributes to genomic plasticity. Target capture is a key step in the transposition process, because it contributes to the selection of new insertion sites. Nothing or little is known about how eukaryotic mariner DNA transposons trigger this step. In the case of Mos1, biochemistry and crystallography have deciphered several inverted terminal repeat-transposase complexes that are intermediates during transposition. However, the target capture complex is still unknown. Here, we show that the preintegration complex (i.e., the excised transposon) is the only complex able to capture a target DNA. Mos1 transposase does not support target commitment, which has been proposed to explain Mos1 random genomic integrations within host genomes. We demonstrate that the TA dinucleotide used as the target is crucial both to target recognition and in the chemistry of the strand transfer reaction. Bent DNA molecules are better targets for the capture when the target DNA is nicked two nucleotides apart from the TA. They improve strand transfer when the target DNA contains a mismatch near the TA dinucleotide. PMID:24269942

  8. The tourism attractiveness of Polish libraries

    OpenAIRE

    Miedzińska, Magdalena; Tanaś, Sławoj

    2009-01-01

    The aim of the article is to draw the reader's attention to the tourism attractiveness of renowned Polish libraries. These have attained a tourism function due to tourism exploration and penetration, but remain in the shadow of other Polish cultural assets. The article outlines the historical geography of Polish libraries, an analysis of tourism assets and an attempt to classify and catalogue libraries in Poland.

  9. Irradiation response of radio-frequency sputtered Al/Gd2O3/p-Si MOS capacitors

    Science.gov (United States)

    Kahraman, A.; Yilmaz, E.

    2017-10-01

    The usage of the Gadolinium oxide (Gd2O3) as sensitive region in the MOS (Metal-Oxide-Semiconductor)-based dosimeters was investigated in the presented study. The Gd2O3 films grown on p-type Si (100) by RF magnetron sputtering were annealed at 800 °C under N2 ambient. The back and front metal contacts were establishes to produce MOS capacitors. The fabricated Gd2O3 MOS capacitors were irradiated in the dose range 0.5-50 Gy by 60Co gamma source. The performed Capacitance-Voltage (C-V) curves of the Gd2O3 MOS capacitors shifted to right side relative to pre-irradiation one. While continuous increments in the oxide trapped charges with increasing in gamma dose were observed, interface trapped charges fluctuated in the studied dose range. However, the variation of the interface trapped charge densities was found in the order of 1011 cm-2 and no significant variation was observed with applied dose. These results confirm that a significant deterioration does not occur in the capacitance during the irradiation. The higher oxide trapped charges compared to interface trapped charges showed that these traps were more responsible for the shift of the C-V curves. The sensitivity and percentage fading after 105 min of the Gd2O3 MOS capacitor were found as 39.7±1.4 mV/Gy and 14.5%, respectively. The devices sensitivity was found to be higher than that of capacitors composed of Er2O3, Sm2O3, La2O3, Al2O3, and SiO2, but, the high fading values is seen as a major problem for these capacitors. Finally, the barrier height was investigated with gamma exposure and the results showed that its value increased with increasing in radiation dose due to possible presence of the acceptor-like interface states.

  10. Facile Synthesis of In–Situ Nitrogenated Graphene Decorated by Few–Layer MoS2 for Hydrogen Evolution Reaction

    International Nuclear Information System (INIS)

    Dai, Xiaoping; Li, Zhanzhao; Du, Kangli; Sun, Hui; Yang, Ying; Zhang, Xin; Ma, Xingyu; Wang, Jie

    2015-01-01

    Graphical abstract: In–situ nitrogenated graphene–few layer MoS 2 composites are fabricated by combinating chemical and hydrothermal reduction. The resulting MoS 2 /N–rGO–HA by N 2 H 4 ·H 2 O and NH 3 ·H 2 O as co-reductant exhibits high activity and remarkable stability for hydrogen evolution reaction (HER). The excellent electro-catalytic performance is ascribed to the synergistic effects, confinement effects and highly dispersed MoS 2 nanosheets on N-doping rGO. Display Omitted -- Highlights: • In–situ nitrogenated graphene–few layer MoS 2 composites are fabricated by combinating chemical and hydrothermal co-reduction. • The resulting MoS 2 /N–rGO–HA exhibits high activity and remarkable stability for HER. • The excellent electro-catalytic performance is ascribed to the synergistic effects, confinement effects and highly dispersed MoS 2 nanosheets on N-doping rGO. -- Abstract: A facile one–step synthetic strategy by combinating chemical and hydrothermal reduction of graphene oxide and Mo precursor is proposed to fabricate in–situ nitrogenated graphene–few layer MoS 2 composite (MoS 2 /N–rGO–HA) for hydrogen evolution reaction (HER). The N–doping graphene nanosheets and highly dispersed MoS 2 nanosheets by ammonia and hydrozine as co–reductant have greatly promoted the N content, concentrations of pyridinic and graphitic N, the electron transport in electrodes, and assure high catalytic efficiency. The MoS 2 /N–rGO–HA composite exhibits extremely high activity in acidic solutions with a small onset potential of 100 mV and Tafel slope of 45 mV/dec, as well as a current density about 32.4 mA cm −2 at overpotential about 0.2 V. Moreover, such MoS 2 /N–rGO–HA electroncatalyst also shows an excellent stability during 1000 cycles with negligible loss of the cathodic current. This facile hydrothermal method could provide a promising strategy for the synthesis of in–situ nitrogen–doping graphene sheets and few

  11. Green synthesis of CuxO nanoscale MOS capacitors processed at low temperatures

    KAUST Repository

    Al-Shehri, Safeyah

    2017-01-10

    In this work, we employed two nontoxic green chemistry methods to develop solution-processed copper oxide CuxO thin films at low annealing temperature of 200 °C. The first aqueous precursor of CuxO was prepared by mixing the copper powder with spinach leaves extract, whereas the other solution was formulated using the water-based polyol reduction method of Cu(II) nitrate. The as-prepared precursors were then spun on SiO2/P+ Si substrates to form nanoscale Metal-Oxide-Semiconductor (MOS) capacitors by which some valuable information about the CuxO semiconductor films and their interfaces with dielectric were acquired. Both fabricated MOS capacitors exhibited p-type polarity with negative flat-band voltages. However, the MOS based on spinach extract-CuxO films showed small hysteresis of 100 mV, which could be attributed to its large grain size that sequentially leads to smooth interface and less trap density.

  12. Green synthesis of CuxO nanoscale MOS capacitors processed at low temperatures

    KAUST Repository

    Al-Shehri, Safeyah; Al-Senany, Norah; Altuwirqi, Reem; Bayahya, Amani; Alshammari, Fwzah Hamud; Wang, Zhenwei; Al-Jawhari, Hala

    2017-01-01

    In this work, we employed two nontoxic green chemistry methods to develop solution-processed copper oxide CuxO thin films at low annealing temperature of 200 °C. The first aqueous precursor of CuxO was prepared by mixing the copper powder with spinach leaves extract, whereas the other solution was formulated using the water-based polyol reduction method of Cu(II) nitrate. The as-prepared precursors were then spun on SiO2/P+ Si substrates to form nanoscale Metal-Oxide-Semiconductor (MOS) capacitors by which some valuable information about the CuxO semiconductor films and their interfaces with dielectric were acquired. Both fabricated MOS capacitors exhibited p-type polarity with negative flat-band voltages. However, the MOS based on spinach extract-CuxO films showed small hysteresis of 100 mV, which could be attributed to its large grain size that sequentially leads to smooth interface and less trap density.

  13. Using a Floating-Gate MOS Transistor as a Transducer in a MEMS Gas Sensing System

    Directory of Open Access Journals (Sweden)

    Gaspar Casados-Cruz

    2010-11-01

    Full Text Available Floating-gate MOS transistors have been widely used in diverse analog and digital applications. One of these is as a charge sensitive device in sensors for pH measurement in solutions or using gates with metals like Pd or Pt for hydrogen sensing. Efforts are being made to monolithically integrate sensors together with controlling and signal processing electronics using standard technologies. This can be achieved with the demonstrated compatibility between available CMOS technology and MEMS technology. In this paper an in-depth analysis is done regarding the reliability of floating-gate MOS transistors when charge produced by a chemical reaction between metallic oxide thin films with either reducing or oxidizing gases is present. These chemical reactions need temperatures around 200 °C or higher to take place, so thermal insulation of the sensing area must be assured for appropriate operation of the electronics at room temperature. The operation principle of the proposal here presented is confirmed by connecting the gate of a conventional MOS transistor in series with a Fe2O3 layer. It is shown that an electrochemical potential is present on the ferrite layer when reacting with propane.

  14. Charge-exchange neutral hydrogen measurements in TFTR using Pd-MOS microsensors

    International Nuclear Information System (INIS)

    Bastasz, R.; Kilpatrick, S.J.; Ruzic, D.N.

    1991-06-01

    An array of Pd-metal-oxide semiconductor (Pd-MOS) diodes has been used to monitor the fluence and energy of charge-exchange neutral hydrogen isotopes striking the wall of the Tokamak Fusion Test Reactor (TFTR). The array was positioned 4 cm behind the graphite-tiled wall at the toroidal midplane and exposed to several hundred plasma discharges. Hydrogen isotopes striking the Pd-MOS diodes were detected by measuring the leakage current, which is affected by the presence of these species at the Pd/SiO 2 interface. It was found that the midplane flux strongly increased for neutral-beam heated plasmas and correlated with co-injected neutral beam power. The majority of the neutral flux was <50 eV in energy but its energy distribution extended to above 500 eV. 20 refs., 4 figs

  15. Soft-type trap-induced degradation of MoS2 field effect transistors

    Science.gov (United States)

    Cho, Young-Hoon; Ryu, Min-Yeul; Lee, Kook Jin; Park, So Jeong; Choi, Jun Hee; Lee, Byung-Chul; Kim, Wungyeon; Kim, Gyu-Tae

    2018-06-01

    The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation–correlated mobility fluctuation (CNF–CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF–CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.

  16. Corporate Politics on Polish Millennials

    OpenAIRE

    Natalia Roślik

    2017-01-01

    In the very beginning of this particular paper, an author is trying to determine and describe who Millennials actually are. Then, the basis of Millennials definition is analysing corporation’s activity over the past years regarding this age group. The main goal of the thesis is to bring their specific futures out and describe what corporations on Polish job market are doing to encourage them to work in their offices. Especially in Poland within the last years, it is observed that big multinat...

  17. Polish Foundation for Energy Efficiency

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1995-12-31

    The Polish Foundation for Energy Efficiency (FEWE) was established in Poland at the end of 1990. FEWE, as an independent and non-profit organization, has the following objectives: to strive towards an energy efficient national economy, and to show the way and methods by use of which energy efficiency can be increased. The activity of the Foundation covers the entire territory of Poland through three regional centers: in Warsaw, Katowice and Cracow. FEWE employs well-known and experienced specialists within thermal and power engineering, civil engineering, economy and applied sciences. The organizer of the Foundation has been Battelle Memorial Institute - Pacific Northwest Laboratories from the USA.

  18. Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions.

    Science.gov (United States)

    Zhang, Han; Ye, Meng; Wang, Yangyang; Quhe, Ruge; Pan, Yuanyuan; Guo, Ying; Song, Zhigang; Yang, Jinbo; Guo, Wanlin; Lu, Jing

    2016-06-28

    Semiconducting single-layer (SL) and few-layer MoS2 have a flat surface, free of dangling bonds. Using density functional theory coupled with non-equilibrium Green's function method, we investigate the spin-polarized transport properties of Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions with MoS2 layer numbers of N = 1, 3, and 5. Well-defined interfaces are formed between MoS2 and metal electrodes. The junctions with a SL MoS2 spacer are almost metallic owing to the strong coupling between MoS2 and the ferromagnets, while those are tunneling with a few layer MoS2 spacer. Both large magnetoresistance and tunneling magnetoresistance are found when fcc or hcp Co is used as an electrode. Therefore, flat single- and few-layer MoS2 can serve as an effective nonmagnetic spacer in a magnetoresistance or tunneling magnetoresistance device with a well-defined interface.

  19. Effects of different polishing techniques on the surface roughness of dental porcelains

    Directory of Open Access Journals (Sweden)

    Işil Sarikaya

    2010-02-01

    Full Text Available OBJECTIVE: The purpose of this study was to evaluate the effects of different polishing techniques on the surface roughness of dental porcelains. MATERIAL AND METHODS: Fifty-five cylindirical specimens (15x2 mm were prepared for each feldspathic (Vita VMK 95, Ceramco III and low-fusing dental porcelain (Matchmaker. Fifty-five specimens of machinable feldspathic porcelain blocks (Vitablocs Mark II, (12x14x18 mm were cut into 2-mm-thick slices (12x14 mm with low speed saw. The prepared specimens were divided into 11 groups (n=5 representing different polishing techniques including control ((C no surface treatment, glaze (G and other 9 groups that were finished and polished with polishing discs (Sof-Lex (Sl, two porcelain polishing kits (NTI (Pk, Dialite II (Di, a diamond polishing paste (Sparkle (Sp, a zirconium silicate based cleaning and polishing prophy paste (Zircate (Zr, an aluminum oxide polishing paste (Prisma Gloss (Pg, and combinations of them. The surface roughness of all groups was measured with a profilometer. The data were analyzed with a 2-way analysis of variance, and the mean values were compared by the Tukey Honestly Significant Difference test (a=0.05. RESULTS: For all porcelain material groups, the lowest Ra values were observed in Group Gl, Group Sl, Group Pk, and Group Di, which were not significantly different from each other (p>0.05.When comparing the 4 different porcelain materials, the machinable feldspathic porcelain block group (Mark II demonstrated statistically significantly less Ra values than the other porcelain materials tested (p<0.05. No significant difference was observed between the VMK 95 and Ceramco III porcelain groups (p=0.919, also these groups demonstrated the highest Ra values. CONCLUSION: Subjected to surface roughness, the surfaces obtained with polishing and/or cleaning-prophy paste materials used alone were rougher compared to the surfaces finished using Sof-lex, Dialite, and NTI polishing kit

  20. Sexual activity of Polish adults

    Directory of Open Access Journals (Sweden)

    Beata Pastwa-Wojciechowska

    2014-03-01

    Full Text Available Aim. The purpose of this research was to explore the subject of sexual activity in the Polish population, with special focus on age and gender differences, and sexual infidelity. Sexual activity is one of the basic factors in initiating and maintaining relationships. On the one hand, sexual activity enables us to meet natural needs and maintain an intimate relationship with another human being; on the other, it may allow us to overcome loneliness and social isolation by providing the opportunity to express feelings of closeness and unity. Material and method. The research was conducted on a representative group of 3,200 Poles aged between 15–49, with the support of a well-known Polish research company – TNS OBOP. Face-to-face and Pencil and Paper (PAPI interviews were carried out. Results. The results focus on two main issues: the age and motives of sexual initiation among teenagers (with a significant percentage starting their sexual activity at the age of 15, and the quality of the sexual lives of adults (average number of sexual partners, sexual infidelity and sexual satisfaction. Conclusion. There is dependence between the type of relationship and the performance or non-performance of sexual activity, as well as the quality of the relationship. Among both adolescents and adults, remaining in a stable relationship (partnership or marriage promotes loyalty. The performance of sexual goals turns out to be an important mechanism regulating the interpersonal aspects of a relationship, influencing their perception and evaluation.

  1. Buffered Electrochemical Polishing of Niobium

    Energy Technology Data Exchange (ETDEWEB)

    Ciovati, Gianluigi [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Tian, Hui [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); College of William and Mary, Williamsburg, VA (United States); Corcoran, Sean [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)

    2011-03-01

    The standard preparation of superconducting radio-frequency (SRF) cavities made of pure niobium include the removal of a 'damaged' surface layer, by buffered chemical polishing (BCP) or electropolishing (EP), after the cavities are formed. The performance of the cavities is characterized by a sharp degradation of the quality factor when the surface magnetic field exceeds about 90 mT, a phenomenon referred to as 'Q-drop.' In cavities made of polycrystalline fine grain (ASTM 5) niobium, the Q-drop can be significantly reduced by a low-temperature (? 120 °C) 'in-situ' baking of the cavity if the chemical treatment was EP rather than BCP. As part of the effort to understand this phenomenon, we investigated the effect of introducing a polarization potential during buffered chemical polishing, creating a process which is between the standard BCP and EP. While preliminary results on the application of this process to Nb cavities have been previously reported, in this contribution we focus on the characterization of this novel electrochemical process by measuring polarization curves, etching rates, surface finish, electrochemical impedance and the effects of temperature and electrolyte composition. In particular, it is shown that the anodic potential of Nb during BCP reduces the etching rate and improves the surface finish.

  2. Synergetic effect of MoS2 and graphene as cocatalysts for enhanced photocatalytic activity of BiPO4 nanoparticles

    Science.gov (United States)

    Lv, Hua; Liu, Yumin; Tang, Haibo; Zhang, Peng; Wang, Jianji

    2017-12-01

    The photodegradation of organic pollutants is an attractive green chemistry technology for water pollution control. Here we prepared a new composite material consisting of BiPO4 nanocrystals grown on layered graphene and MoS2 as a high-performance photocatalyst for the photodegradation of organic pollutants. This composite material was synthesized by a facile one-pot microwave-assisted hydrothermal technique in the presence of layered graphene and MoS2. Through optimizing the loading content of each component, the BiPO4-MoS2/graphene nanocomposite exhibited the highest photocatalytic activity for the degradation of Rhodamine (RhB) when the content of MoS2 and graphene was 2 wt% and 7 wt%, respectively. The enhanced photocatalytic activity of the new composite photocatalyst was attributed to the positive synergetic effect of the layered graphene and MoS2 as cocatalyst, which acted as electron collector and transporter for the interfacial electron transfer from BiPO4 to electron acceptor in the aqueous solution and thus suppressed the charge recombination and made the photogenerated holes more available to participated in the oxidation process. Moreover, the presence of layered MoS2/graphene hybrid could offer more reactive sites and activated the O2 molecular in water to form superoxide radical, thereby resulting in the enhanced photocatalytic activity.

  3. Three-Dimensional Heterostructures of MoS 2 Nanosheets on Conducting MoO 2 as an Efficient Electrocatalyst To Enhance Hydrogen Evolution Reaction

    KAUST Repository

    Nikam, Revannath Dnyandeo

    2015-10-05

    Molybdenum disulfide (MoS) is a promising catalyst for hydrogen evolution reaction (HER) because of its unique nature to supply active sites in the reaction. However, the low density of active sites and their poor electrical conductivity have limited the performance of MoS in HER. In this work, we synthesized MoS nanosheets on three-dimensional (3D) conductive MoO via a two-step chemical vapor deposition (CVD) reaction. The 3D MoO structure can create structural disorders in MoS nanosheets (referred to as 3D MoS/MoO), which are responsible for providing the superior HER activity by exposing tremendous active sites of terminal disulfur of S2 (in MoS) as well as the backbone conductive oxide layer (of MoO) to facilitate an interfacial charge transport for the proton reduction. In addition, the MoS nanosheets could protect the inner MoO core from the acidic electrolyte in the HER. The high activity of the as-synthesized 3D MoS/MoO hybrid material in HER is attributed to the small onset overpotential of 142 mV, a largest cathodic current density of 85 mA cm, a low Tafel slope of 35.6 mV dec, and robust electrochemical durability.

  4. Three-Dimensional Heterostructures of MoS 2 Nanosheets on Conducting MoO 2 as an Efficient Electrocatalyst To Enhance Hydrogen Evolution Reaction

    KAUST Repository

    Nikam, Revannath Dnyandeo; Lu, Ang-Yu; Sonawane, Poonam Ashok; Kumar, U. Rajesh; Yadav, Kanchan; Li, Lain-Jong; Chen, Yit Tsong

    2015-01-01

    Molybdenum disulfide (MoS) is a promising catalyst for hydrogen evolution reaction (HER) because of its unique nature to supply active sites in the reaction. However, the low density of active sites and their poor electrical conductivity have limited the performance of MoS in HER. In this work, we synthesized MoS nanosheets on three-dimensional (3D) conductive MoO via a two-step chemical vapor deposition (CVD) reaction. The 3D MoO structure can create structural disorders in MoS nanosheets (referred to as 3D MoS/MoO), which are responsible for providing the superior HER activity by exposing tremendous active sites of terminal disulfur of S2 (in MoS) as well as the backbone conductive oxide layer (of MoO) to facilitate an interfacial charge transport for the proton reduction. In addition, the MoS nanosheets could protect the inner MoO core from the acidic electrolyte in the HER. The high activity of the as-synthesized 3D MoS/MoO hybrid material in HER is attributed to the small onset overpotential of 142 mV, a largest cathodic current density of 85 mA cm, a low Tafel slope of 35.6 mV dec, and robust electrochemical durability.

  5. Metal/oxide/semiconductor interface investigated by monoenergetic positrons

    Science.gov (United States)

    Uedono, A.; Tanigawa, S.; Ohji, Y.

    1988-10-01

    Variable-energy positron-beam studies have been carried out for the first time on a metal/oxide/semiconductor (MOS) structure of polycrystalline Si/SiO 2/Si-substrate. We were successful in collecting injected positrons at the SiO 2/Si interface by the application of an electric field between the MOS electrodes.

  6. Positron studies of metal-oxide-semiconductor structures

    Science.gov (United States)

    Au, H. L.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K. G.

    1993-03-01

    Positron annihilation spectroscopy provides a new probe to study the properties of interface traps in metal-oxide semiconductors (MOS). Using positrons, we have examined the behavior of the interface traps as a function of gate bias. We propose a simple model to explain the positron annihilation spectra from the interface region of a MOS capacitor.

  7. Polish Industry and Art at CERN

    CERN Multimedia

    2000-01-01

    On 17 October 2000 the second Polish industrial and technological exhibition opened at CERN. The first one was held five years ago and nine of the companies that were present then have come back again this year. Six of those companies were awarded contracts with CERN in 1995. Three Polish officials were present at the Opening Ceremony today: Mrs Malgorzata Kozlowska, Under-secretary of State in the State Committee for Scientific Research, Mr Henryk Ogryczak, Under-secretary of State in Ministry of Economy and Prof. Jerzy Niewodniczanski, President of National Atomic Energy Agency. Professor Luciano Maiani welcomed the Polish delegation to CERN and stressed the important contribution of Polish scientists and industrialists to the work of the laboratory. Director General Luciano Maiani (back left) and head of SPL division Karl-Heinz Kissler (back right) visit the Poland at CERN exhibition… The exhibition offers Polish companies the opportunity to establish professional contacts with CERN. Nineteen companies...

  8. Design method for a digitally trimmable MOS transistor structure

    DEFF Research Database (Denmark)

    Ning, Feng; Bruun, Erik

    1996-01-01

    A digitally trimmable MOS transistor is a MOS transistor consisting of a drain, a source, and a main gate as well as several subgates. The transconductance of the transistor is tunabledigitally by means of connecting subgates either to the main gate or to the source terminal. In this paper, a sys...

  9. Power mos devices: structures and modelling procedures

    Energy Technology Data Exchange (ETDEWEB)

    Rossel, P.; Charitat, G.; Tranduc, H.; Morancho, F.; Moncoqut

    1997-05-01

    In this survey, the historical evolution of power MOS transistor structures is presented and currently used devices are described. General considerations on current and voltage capabilities are discussed and configurations of popular structures are given. A synthesis of different modelling approaches proposed last three years is then presented, including analytical solutions, for basic electrical parameters such as threshold voltage, on-resistance, saturation and quasi-saturation effects, temperature influence and voltage handling capability. The numerical solutions of basic semiconductor devices is then briefly reviewed along with some typical problems which can be solved this way. A compact circuit modelling method is finally explained with emphasis on dynamic behavior modelling

  10. An evaluation of low-energy x-ray and cobalt-60 irradiations of MOS transistors

    International Nuclear Information System (INIS)

    Dozier, C.M.; Fleetwood, D.M.

    1987-01-01

    An evaluation of methodologies for irradiating MOS transistors with low-energy x-ray and Co-60 sources has been performed. The authors find that comparisons of voltage shifts produced by bulk trapped charge and interface states in MOS transistors irradiated using two different low energy x-ray sources (an ARACOR 10 keV W source and an 8 keV Cu source) agree to within better than 30 percent. This quality of agreement is similar in magnitude to that between MOS devices irradiated by different Co-60 sources. In contrast, the measurements indicate that interlaboratory comparisons of ratios of shifts produced by x-ray and Co-60 sources can lead to differences in ratios as large as a factor of --1.7. Improved electron-hole recombination data for oxides is presented. This recombination correction, in conjunction with a correction for interface dose enhancement, is used to predict the ratios of shifts produced by x-ray and Co-60 sources. However, the results show that corrections for electron-hole recombination and interface does enhancement do not, by themselves, adequately predict the field dependent behavior of these transistors

  11. MoS2 nanosheet functionalized with Cu nanoparticles and its application for glucose detection

    International Nuclear Information System (INIS)

    Huang, Jingwei; Dong, Zhengping; Li, Yanrong; Li, Jing; Tang, Weijie; Yang, Haidong; Wang, Jia; Bao, Yun; Jin, Jun; Li, Rong

    2013-01-01

    Graphical abstract: - Highlights: • First report on decorating MoS 2 nanosheet with Cu nanoparticles by chemical reduction. • Cu nanoparticles were uniformly decorated on MoS 2 nanosheet. • Glucose biosensor based on copper nanoparticles-MoS 2 nanosheet hybrid is fabricated. • The biosensor exhibits high sensitivity. - Abstract: For the first time, Cu nanoparticles were evenly decorated on MoS 2 nanosheet by chemical reduction. The as-prepared Cu-MoS 2 hybrid was characterized by atomic force microscope (AFM), Raman spectroscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD) and then used to fabricate a non-enzymatic glucose sensor. The performance of our sensor was investigated by cyclic voltammetry and amperometric measurement in alkaline media. Electrochemical tests showed that Cu-MoS 2 hybrid exhibited synergistic electrocatalytic activity on the oxidation of glucose with a high sensitivity of 1055 μA mM −1 cm −2 and a linear range up to 4 mM

  12. Corporate Politics on Polish Millennials

    Directory of Open Access Journals (Sweden)

    Natalia Roślik

    2017-12-01

    Full Text Available In the very beginning of this particular paper, an author is trying to determine and describe who Millennials actually are. Then, the basis of Millennials definition is analysing corporation’s activity over the past years regarding this age group. The main goal of the thesis is to bring their specific futures out and describe what corporations on Polish job market are doing to encourage them to work in their offices. Especially in Poland within the last years, it is observed that big multinational companies are paying special attention to Millennials and trying to hire them before competitors will do so. As a part of this paper, an author will describe corporate politics and practices on Thomson Reuters and BNY Mellon examples. Within this work, an author is also discussing key features and differences between this generation and Millennials parent’s generation. Additionally, there is a reference to corporate social responsibility concept and work-life balance issues.

  13. Determinants of Polish public debt

    Directory of Open Access Journals (Sweden)

    Tomasz Stryjewski

    2011-12-01

    Full Text Available The crisis, which had its beginning in 2007, turned into the debt crisis of the countries. The examples of Greece, Ireland, Iceland or Spain showed the category of public debt in a new light. Poland, at the turn of 2010/2011 also achieved the upper level of public debt acceptable by the law. In the present situation of the European Union countries being in debt, and even insolvent, the situation in Poland becomes riskier. This article attempts at an empirical verification of the determinants of Polish public debt within 95 months (the data link with the period of time from January 2003 to November 2010. The verification of the main factors which cause the formation of public debt takes place by means of an appropriately verified econometric model.

  14. Zerodur polishing process for high surface quality and high efficiency

    International Nuclear Information System (INIS)

    Tesar, A.; Fuchs, B.

    1992-08-01

    Zerodur is a glass-ceramic composite importance in applications where temperature instabilities influence optical and mechanical performance, such as in earthbound and spaceborne telescope mirror substrates. Polished Zerodur surfaces of high quality have been required for laser gyro mirrors. Polished surface quality of substrates affects performance of high reflection coatings. Thus, the interest in improving Zerodur polished surface quality has become more general. Beyond eliminating subsurface damage, high quality surfaces are produced by reducing the amount of hydrated material redeposited on the surface during polishing. With the proper control of polishing parameters, such surfaces exhibit roughnesses of < l Angstrom rms. Zerodur polishing was studied to recommend a high surface quality polishing process which could be easily adapted to standard planetary continuous polishing machines and spindles. This summary contains information on a polishing process developed at LLNL which reproducibly provides high quality polished Zerodur surfaces at very high polishing efficiencies

  15. Intercalation of Si between MoS2 layers

    Directory of Open Access Journals (Sweden)

    Rik van Bremen

    2017-09-01

    Full Text Available We report a combined experimental and theoretical study of the growth of sub-monolayer amounts of silicon (Si on molybdenum disulfide (MoS2. At room temperature and low deposition rates we have found compelling evidence that the deposited Si atoms intercalate between the MoS2 layers. Our evidence relies on several experimental observations: (1 Upon the deposition of Si on pristine MoS2 the morphology of the surface transforms from a smooth surface to a hill-and-valley surface. The lattice constant of the hill-and-valley structure amounts to 3.16 Å, which is exactly the lattice constant of pristine MoS2. (2 The transitions from hills to valleys are not abrupt, as one would expect for epitaxial islands growing on-top of a substrate, but very gradual. (3 I(V scanning tunneling spectroscopy spectra recorded at the hills and valleys reveal no noteworthy differences. (4 Spatial maps of dI/dz reveal that the surface exhibits a uniform work function and a lattice constant of 3.16 Å. (5 X-ray photo-electron spectroscopy measurements reveal that sputtering of the MoS2/Si substrate does not lead to a decrease, but an increase of the relative Si signal. Based on these experimental observations we have to conclude that deposited Si atoms do not reside on the MoS2 surface, but rather intercalate between the MoS2 layers. Our conclusion that Si intercalates upon the deposition on MoS2 is at variance with the interpretation by Chiappe et al. (Adv. Mater. 2014, 26, 2096–2101 that silicon forms a highly strained epitaxial layer on MoS2. Finally, density functional theory calculations indicate that silicene clusters encapsulated by MoS2 are stable.

  16. Recovery of rare earths from used polishes by chemical vapor transport process

    International Nuclear Information System (INIS)

    Ozaki, T.; Machida, K.; Adachi, G.

    1998-01-01

    Full text: Rare earth oxide polishes are widely used in the glass industry because of its mechanical and chemical polishing action. The Japanese glass industry use 2000 tons per year of the polishes, and a large portion of them are thrown away after their polishing lifetime. A dry recovery processes for rare earths from the used polishes have been investigated by using a chemical vapor transport method via the formation of vapor complexes RAl n Cl 3+3n (R = rare earths). A flow type reactor with various temperature gradients was employed for the process. The used polishes were mixed with active carbon, and chlorinated with N 2 + Cl 2 mixture at 1273 K. Aluminium oxide were also chlorinated at lower temperature and the resulting AlCl 3 were introduced to the reactor. The rare earth chlorides and AlCl 3 were converted to the vapor complexes. These were driven along the temperature gradient, decomposed according to the reverse reaction, and regenerated RCl 3 . About 90 % of the used polish were chlorinated after 2 hours. Rare earth chlorides, AlCl 3 , and FeCl 3 were fully transported after 82 hours. The rare earth chlorides were mainly condensed over the temperature range 1263-903 K. On the other hand, AlCl 3 and FeCl 3 were deposited at the temperature range below 413 K. CaCl 2 and SrCl 2 were hardly transported and remained in the residue. When the temperature gradient with the smaller slope was used, mutual separation efficiencies among the rare earths was improved. The highest CeCl 3 purity of 80% was obtained in the process

  17. Convergent Polishing: A Simple, Rapid, Full Aperture Polishing Process of High Quality Optical Flats & Spheres

    Science.gov (United States)

    Suratwala, Tayyab; Steele, Rusty; Feit, Michael; Dylla-Spears, Rebecca; Desjardin, Richard; Mason, Dan; Wong, Lana; Geraghty, Paul; Miller, Phil; Shen, Nan

    2014-01-01

    Convergent Polishing is a novel polishing system and method for finishing flat and spherical glass optics in which a workpiece, independent of its initial shape (i.e., surface figure), will converge to final surface figure with excellent surface quality under a fixed, unchanging set of polishing parameters in a single polishing iteration. In contrast, conventional full aperture polishing methods require multiple, often long, iterative cycles involving polishing, metrology and process changes to achieve the desired surface figure. The Convergent Polishing process is based on the concept of workpiece-lap height mismatch resulting in pressure differential that decreases with removal and results in the workpiece converging to the shape of the lap. The successful implementation of the Convergent Polishing process is a result of the combination of a number of technologies to remove all sources of non-uniform spatial material removal (except for workpiece-lap mismatch) for surface figure convergence and to reduce the number of rogue particles in the system for low scratch densities and low roughness. The Convergent Polishing process has been demonstrated for the fabrication of both flats and spheres of various shapes, sizes, and aspect ratios on various glass materials. The practical impact is that high quality optical components can be fabricated more rapidly, more repeatedly, with less metrology, and with less labor, resulting in lower unit costs. In this study, the Convergent Polishing protocol is specifically described for fabricating 26.5 cm square fused silica flats from a fine ground surface to a polished ~λ/2 surface figure after polishing 4 hr per surface on a 81 cm diameter polisher. PMID:25489745

  18. Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer

    International Nuclear Information System (INIS)

    Wang, Qian; Cheng, Xinhong; Zheng, Li; Ye, Peiyi; Li, Menglu; Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue; Yu, Yuehui

    2017-01-01

    Highlights: • The 4H-SiC MOS capacitor with an untra-thin LaSiO_x passivation layer and Al_2O_3 gate dielectric was fabricated. • The detrimental SiO_x interfacial layer could be effectively restrained by the LaSiO_x passivation layer. • The passivation mechanism of LaSiO_x was analyzed by HRTEM, XPS and electrical measurements. • The 4H-SiC MOS capacitor with a LaSiO_x passivation layer shows excellent device characteristics. • This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications. - Abstract: The detrimental sub-oxide (SiO_x) interfacial layer formed during the 4H-SiC metal-oxide-semiconductor (MOS) capacitor fabrication will drastically damage its device performance. In this work, an ultrathin lanthanum silicate (LaSiO_x) passivation layer was introduced to enhance the interfacial and electrical characteristics of 4H-SiC MOS capacitor with Al_2O_3 gate dielectric. The interfacial LaSiO_x formation was investigated by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The 4H-SiC MOS capacitor with ultrathin LaSiO_x passivation interlayer shows excellent interfacial and electrical characteristics, including lower leakage current density, higher dielectric breakdown electric field, smaller C–V hysteresis, and lower interface states density and border traps density. The involved mechanism implies that the LaSiO_x passivation interlayer can effectively restrain SiO_x formation and improve the Al_2O_3/4H-SiC interface quality. This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications.

  19. Surface Roughness, Microhardness, and Microleakage of a Silorane-Based Composite Resin after Immediate or Delayed Finishing/Polishing

    Directory of Open Access Journals (Sweden)

    Fernanda Carvalho Rezende Lins

    2016-01-01

    Full Text Available Objective. This study evaluated the effect of immediate or delayed finishing/polishing using different systems on the surface roughness, hardness, and microleakage of a silorane-based composite. Material and Methods. Specimens were made with silorane-based composite (Filtek P90, 3M ESPE and assigned to the treatments: control (light-cured; aluminum oxide discs (Sof-Lex, 3M ESPE; diamond-impregnated silicone tips (Astropol, Ivoclar Vivadent; aluminum oxide-impregnated silicone tips (Enhance, Dentsply. Half of the specimens were finished/polished immediately and the rest after 7 days. Surface roughness (Ra, μm; n=20 and Vickers microhardness (50 g; 45 s; n=10 were measured. Cavities were prepared in bovine incisors and filled with Filtek P90. The fillings received immediate or delayed finishing/polishing (n=10 and were subjected to dye penetration test (0.5% basic fuchsin, 24 h. Data were analyzed by ANOVA and Scheffe, Kruskal-Wallis, and Mann-Whitney tests (p<0.05. Results. The finishing/polishing system significantly influenced roughness and microhardness (p<0.0001. For enamel, microleakage was not affected by the finishing/polishing system (p=0.309. For dentin, Sof-Lex discs and Astropol points promoted greater microleakage than Enhance points (p=0.033. Conclusion. Considering roughness, microhardness, and microleakage together, immediate finishing/polishing of a silorane-based composite using aluminum oxide discs may be recommended.

  20. Technological Advances of Robot Assisted Polishing

    DEFF Research Database (Denmark)

    Lazarev, Ruslan; Top, Søren; Grønbæk, Jens

    The efficient polishing of surfaces is very important in mould and die industry. Fine abrasive processes are widely used in industry for the first steps for the production of tools of high quality in terms of finishing accuracy, form and surface integrity. While manufacturing of most components....... In this study, the influence of polishing parameters and type of polishing media on fine abrasive surface finishing is investigated. Experimental study is covering 2D rotational surfaces that is widespread used in mould and dies industry. Application of it is essential for process intelligent control, condition...... monitoring and quality inspection....

  1. Monitoring the formation of inorganic fullerene-like MoS2 nanostructures by laser ablation in liquid environments

    International Nuclear Information System (INIS)

    Compagnini, Giuseppe; Sinatra, Marco G.; Messina, Gabriele C.; Patanè, Giacomo; Scalese, Silvia; Puglisi, Orazio

    2012-01-01

    Laser ablation of solid targets in liquid media is emerging as a simple, clean and reproducible way to generate a large number of intriguing nanometric structures with peculiar properties. In this work we present some results on the formation of MoS 2 fullerene-like nanoparticles (10-15 nm diameter) obtained by the ablation of crystalline targets in water. Such a top-down approach can be considered greener than standard sulphidization reactions and represents an intriguing single step procedure. The generation of the MoS 2 nanostructures is in competition with that of oxide clusters and strongly depends on the oxidative environment created by the plasma plume. The size, shape and crystalline phase of the obtained nanoparticles are studied by microscopy while X-Ray Photoelectron Spectroscopy is used to investigate the chemical state of produced nanostructures and to propose mechanisms for their growth.

  2. MoS2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits.

    Science.gov (United States)

    He, Xuexia; Chow, WaiLeong; Liu, Fucai; Tay, BengKang; Liu, Zheng

    2017-01-01

    2D transition metal dichalcogenides are promising channel materials for the next-generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS 2 ) few layers and organic crystal - 5,6,11,12-tetraphenylnaphthacene (rubrene). In this work, ambipolar field-effect transistors are successfully achieved based on MoS 2 and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm 2 V -1 s -1 , respectively. The ambipolar behavior is explained based on the band alignment of MoS 2 and rubrene. Furthermore, being a building block, the MoS 2 /rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of -26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material

    International Nuclear Information System (INIS)

    Lee, Hye-Ryoung; Choi, Samjong; Cho, Kyoungah; Kim, Sangsig

    2007-01-01

    Capacitance versus voltage (C-V) curves of Ge-nanocrystals (NCs)-embedded metal-oxide-semiconductor (MOS) capacitors are characterized in this work. Ge NCs were formed in 20-nm thick ZrO 2 gate layers by ion implantation and subsequent annealing procedures. The formation of the Ge NCs in the ZrO 2 gate layers was confirmed by high-resolution transmission electron microscopy and energy dispersive spectroscopy. The C-V curves obtained from a representative MOS capacitor embedded with the Ge NCs exhibit a 3 V memory window as bias voltage varied from 9 to - 9 V and then back to the initial positive voltage, whereas MOS capacitors without Ge NCs show negligible memory windows at the same voltage range. This indicates the presence of charge storages in the Ge NCs. The counterclockwise hysteresis observed from the C-V curves implies that electrons are trapped in Ge NCs presented inside the ZrO 2 gate layer. And our experimental results obtained from capacitance versus time measurements show good retention characteristics of Ge-NCs-embedded MOS capacitors with ZrO 2 gate material for the application of NFGM

  4. Graphene Oxide-Directed Tunable Assembly of MoS2 Ultrathin Nanosheets for Electrocatalytic Hydrogen Evolution

    DEFF Research Database (Denmark)

    Sun, Hongyu; Zhao, Yanyan; Mølhave, Kristian

    2017-01-01

    Three dimensional (3D) hierarchical architectures based onmolybdenum disulfide (MoS2) an d reduced graphene oxide (rGO) are synthesized through a mixed solvothermal method.By simply increasing the amount of graphene oxide (GO) during the synthesis, the 3D assembly of MoS2 can be tunedfrom nanoflo...

  5. Evolution of the MOS transistor - From conception to VLSI

    International Nuclear Information System (INIS)

    Sah, C.T.

    1988-01-01

    Historical developments of the metal-oxide-semiconductor field-effect-transistor (MOSFET) during the last sixty years are reviewed, from the 1928 patent disclosures of the field-effect conductivity modulation concept and the semiconductor triodes structures proposed by Lilienfeld to the 1947 Shockley-originated efforts which led to the laboratory demonstration of the modern silicon MOSFET thirty years later in 1960. A survey is then made of the milestones of the past thirty years leading to the latest submicron silicon logic CMOS (Complementary MOS) and BICMOS (Bipolar-Junction-Transistor CMOS combined) arrays and the three-dimensional and ferroelectric extensions of Dennard's one-transistor dynamic random access memory (DRAM) cell. Status of the submicron lithographic technologies (deep ultra-violet light, X-ray, electron-beam) are summarized. Future trends of memory cell density and logic gate speed are projected. Comparisons of the switching speed of the silicon MOSFET with that of silicon bipolar and GaAs field-effect transistors are reviewed. Use of high-temperature superconducting wires and GaAs-on-Si monolithic semiconductor optical clocks to break the interconnect-wiring delay barrier is discussed. Further needs in basic research and mathematical modeling on the failure mechanisms in submicron silicon transistors at high electric fields (hot electron effects) and in interconnection conductors at high current densities and low as well as high electric fields (electromigration) are indicated

  6. Electron emission from MOS electron emitters with clean and cesium covered gold surface

    DEFF Research Database (Denmark)

    Nielsen, Gunver; Thomsen, Lasse Bjørchmar; Johansson, Martin

    2009-01-01

    MOS (metal-oxide-semiconductor) electron emitters consisting of a Si substrate, a SiO2 tunnel barrier and a Ti (1 nm)/Au(7 nm) top-electrode, with an active area of 1 cm(2) have been produced and studied with surface science techniques under UHV (ultra high vacuum) conditions and their emission...... characteristics have been investigated. It is known, that deposition of an alkali metal on the emitting surface lowers the work function and increases the emission efficiency. For increasing Cs coverages the surface has been characterized by X-ray Photoelectron Spectroscopy (XPS), Ion Scattering Spectroscopy (ISS...

  7. Structural transformation of MoO3 nanobelts into MoS2 nanotubes

    International Nuclear Information System (INIS)

    Deepak, Francis Leonard; Mayoral, Alvaro; Yacaman, Miguel Jose

    2009-01-01

    The structural transformation of MoO 3 nanobelts into MoS 2 nanotubes using a simple sulfur source has been reported. This transformation has been extensively investigated using electron microscopic and spectroscopic techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), electron diffraction (ED), and energy-dispersive X-ray analysis (SEM-EDAX and TEM-EDX). The method described in this report will serve as a generic route for the transformation of other oxide nanostructures into the chalcogenide nanostructures. (orig.)

  8. Characterization of the system MoS2 + C, HAADF vs Tem conventional

    International Nuclear Information System (INIS)

    Reza, C.; Cruz, G.; Santiago, P.; Rendon, L.

    2004-01-01

    A study is presented about the synthesis and characterization of unidimensional nano systems composed of MoS 2 and C with potential use as solid lubricant. The synthesis process was developed for the mold method, via thermal decomposition, which uses a film of nano porous aluminium oxide. Such systems were characterized by two analysis methods that involve Transmission Electron Microscopy, HRTEM (Conventional TEM) and HAADF (Z Contrast). The results obtained in the structural and morphological characterization were supplemented to determine the structure type obtained in the unidimensional systems. (Author)

  9. Modeling of radiation-induced charge trapping in MOS devices under ionizing irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Petukhov, M. A., E-mail: m.a.petukhov@gmail.com; Ryazanov, A. I. [National Research Center Kurchatov Institute (Russian Federation)

    2016-12-15

    The numerical model of the radiation-induced charge trapping process in the oxide layer of a MOS device under ionizing irradiation is developed; the model includes carrier transport, hole capture by traps in different states, recombination of free electrons and trapped holes, kinetics of hydrogen ions which can be accumulated in the material during transistor manufacture, and accumulation and charging of interface states. Modeling of n-channel MOSFET behavior under 1 MeV photon irradiation is performed. The obtained dose dependences of the threshold voltage shift and its contributions from trapped holes and interface states are in good agreement with experimental data.

  10. Jewish problem in the Polish Communist Party

    Directory of Open Access Journals (Sweden)

    Cimek Henryk

    2016-12-01

    Full Text Available Jews accounted for approx. 8-10% of the population of the Second Republic and in the communist movement (Polish Communist Party and Polish Communist Youth Union the rate was approx, 30%, while in subsequent years it much fluctuated. The percentage of Jews was the highest in the authorities of the party and in the KZMP. This had a negative impact on the position of the KPP on many issues, especially in its relation to the Second Republic.

  11. Electrolytic polishing system for space age materials

    International Nuclear Information System (INIS)

    Coons, W.C.; Iosty, L.R.

    1976-01-01

    A simple electrolytic polishing technique was developed for preparing Cr, Co, Hf, Mo, Ni, Re, Ti, V, Zr, and their alloys for structural analysis on the optical microscope. The base electrolyte contains 5g ZnCl 2 and 15g AlCl 3 . 6H 2 O in 200 ml methyl alcohol, plus an amount of H 2 SO 4 depending on the metal being polished. Five etchants are listed

  12. Trace element analysis of nail polishes

    International Nuclear Information System (INIS)

    Misra, G.; Mittal, V.K.; Sahota, H.S.

    1999-01-01

    Instrumental neutron activation analysis (INAA) technique was used to measure the concentrations of various trace elements in nail polishes of popular Indian and foreign brands. The aim of the present experiment was to see whether trace elements could distinguish nail polishes of different Indian and foreign brands from forensic point of view. It was found that cesium can act as a marker to differentiate foreign and Indian brands. (author)

  13. Ionizing radiation M.O.S. dosimeters: sensibility and stability; Dosimetres M.O.S. de rayonnements ionisants: sensibilite et stabilite

    Energy Technology Data Exchange (ETDEWEB)

    Gessinn, F

    1993-12-01

    This thesis is a contribution to the study of the ionizing radiation responsivity of P.O.M.S. dosimeters. Unlike the development of processing hardening techniques, our works goal were to increase, on the one hand, the M.O.S. dosimeters sensitivity in order to detect small radiation doses and on the other hand, the stability with time and temperature of the devices, to minimize the absorbed-dose estimation errors. With this aim in mind, an analysis of all processing parameters has been carried out: the M.O.S. dosimeter sensitivity is primarily controlled by the gate oxide thickness and the irradiation electric field. Thus, P.M.O.S. transistors with 1 and 2 {mu}m thick silica layers have been fabricated for our experiments. The radiation response of our devices in the high-field mode satisfactorily fits a D{sub ox}{sup 2} power law. The maximum sensitivity achieved (9,2 V/Gy for 2{mu}m devices) is close to the ideal value obtained when considering only an unitary carrier-trapping level, and allows to measure about 10{sup -2} Gy radiation doses. Read-time stability has been evaluated under bias-temperature stress conditions: experiments underscore slow fading, corresponding to 10{sup -3} Gy/h. The temperature response has also been studied: the analytical model we have developed predicts M.O.S. transistors threshold voltage variations over the military specifications range [-50 deg. C, + 150 deg. C]. Finally, we have investigated the possibilities of irradiated dosimeters thermal annealing for reusing. It appears clearly that radiation-induced damage annealing is strongly gate bias dependent. Furthermore, dosimeters radiation sensitivity seems not to be affected by successive annealings. (author). 146 refs., 58 figs., 9 tabs.

  14. Experimental Polish-Lithuanian Corpus with the Semantic Annotation Elements

    Directory of Open Access Journals (Sweden)

    Danuta Roszko

    2015-06-01

    Full Text Available Experimental Polish-Lithuanian Corpus with the Semantic Annotation Elements In the article the authors present the experimental Polish-Lithuanian corpus (ECorpPL-LT formed for the idea of Polish-Lithuanian theoretical contrastive studies, a Polish-Lithuanian electronic dictionary, and as help for a sworn translator. The semantic annotation being brought into ECorpPL-LT is extremely useful in Polish-Lithuanian contrastive studies, and also proves helpful in translation work.

  15. Laser polishing of additive manufactured Ti alloys

    Science.gov (United States)

    Ma, C. P.; Guan, Y. C.; Zhou, W.

    2017-06-01

    Laser-based additive manufacturing has attracted much attention as a promising 3D printing method for metallic components in recent years. However, surface roughness of additive manufactured components has been considered as a challenge to achieve high performance. In this work, we demonstrate the capability of fiber laser in polishing rough surface of additive manufactured Ti-based alloys as Ti-6Al-4V and TC11. Both as-received surface and laser-polished surfaces as well as cross-section subsurfaces were analyzed carefully by White-Light Interference, Confocal Microscope, Focus Ion Beam, Scanning Electron Microscopy, Energy Dispersive Spectrometer, and X-ray Diffraction. Results revealed that as-received Ti-based alloys with surface roughness more than 5 μm could be reduce to less than 1 μm through laser polishing process. Moreover, microstructure, microhardness and wear resistance of laser-polished zone was investigated in order to examine the thermal effect of laser polishing processing on the substrate of additive manufactured Ti alloys. This proof-of-concept process has the potential to effectively improve the surface roughness of additive manufactured metallic alloy by local polishing method without damage to the substrate.

  16. Conformal polishing approach: Tool footprint analysis

    Directory of Open Access Journals (Sweden)

    José A Dieste

    2016-02-01

    Full Text Available Polishing process is one of the most critical manufacturing processes during a metal part production because it determines the final quality of the product. Free-form surface polishing is a handmade process with lots of rejected parts, scrap generation and time and energy consumption. Two different research lines are being developed: prediction models of the final surface quality parameters and an analysis of the amount of material removed depending on the polishing parameters to predict the tool footprint during the polishing task. This research lays the foundations for a future automatic conformal polishing system. It is based on rotational and translational tool with dry abrasive in the front mounted at the end of a robot. A tool to part concept is used, useful for large or heavy workpieces. Results are applied on different curved parts typically used in tooling industry, aeronautics or automotive. A mathematical model has been developed to predict the amount of material removed in function of polishing parameters. Model has been fitted for different abrasives and raw materials. Results have shown deviations under 20% that implies a reliable and controllable process. Smaller amount of material can be removed in controlled areas of a three-dimensional workpiece.

  17. Polishing of silicon based advanced ceramics

    Science.gov (United States)

    Klocke, Fritz; Dambon, Olaf; Zunke, Richard; Waechter, D.

    2009-05-01

    Silicon based advanced ceramics show advantages in comparison to other materials due to their extreme hardness, wear and creep resistance, low density and low coefficient of thermal expansion. As a matter of course, machining requires high efforts. In order to reach demanded low roughness for optical or tribological applications a defect free surface is indispensable. In this paper, polishing of silicon nitride and silicon carbide is investigated. The objective is to elaborate scientific understanding of the process interactions. Based on this knowledge, the optimization of removal rate, surface quality and form accuracy can be realized. For this purpose, fundamental investigations of polishing silicon based ceramics are undertaken and evaluated. Former scientific publications discuss removal mechanisms and wear behavior, but the scientific insight is mainly based on investigations in grinding and lapping. The removal mechanisms in polishing are not fully understood due to complexity of interactions. The role of, e.g., process parameters, slurry and abrasives, and their influence on the output parameters is still uncertain. Extensive technological investigations demonstrate the influence of the polishing system and the machining parameters on the stability and the reproducibility. It is shown that the interactions between the advanced ceramics and the polishing systems is of great relevance. Depending on the kind of slurry and polishing agent the material removal mechanisms differ. The observed effects can be explained by dominating mechanical or chemo-mechanical removal mechanisms. Therefore, hypotheses to state adequate explanations are presented and validated by advanced metrology devices, such as SEM, AFM and TEM.

  18. Interculutral Polish-Chinese QQing

    Directory of Open Access Journals (Sweden)

    Elżbieta Gajek

    2012-12-01

    Full Text Available Working in tandem with the use of information and communication technologies is well-known and frequently used as a method of supporting learning of foreign languages in authentic communication. It is based on a constructivist approach to teaching. In the reported case study Polish and Chinese students discussed in English preprepared topics. The work shows the potential of e-learning at the micro level, as the language and intercultural task is implemented into an academic course without modification of the objectives and learning outcomes of the course. Evaluation carried out at the end of the project indicates that both groups perceived the task as a significant linguistic, cultural and personal experience. They stressed the importance of sharing “culture for culture” as the partner culture was new for most of them. The ability to talk and respond to information which was often strange, from the point of view of their own culture, allowed for learning intercultural competence ̔in action’.

  19. Chemical sensitivity of Mo gate Mos capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Lombardi, R.M.; Aragon, R. [Laboratorio de Peliculas delgadas, Facultad de Ingenieria, Paseo Colon 850, 1063, Buenos Aires (Argentina)

    2006-07-01

    Mo gate Mos capacitors exhibit a negative shift of their C-V characteristic by up to 240 mV, at 125 C, in response to 1000 ppm hydrogen, in controlled nitrogen atmospheres. The experimental methods for obtaining capacitance and conductance, as a function of polarisation voltage, as well as the relevant equivalent circuits are reviewed. The single-state interface state density, at the semiconductor-dielectric interface, decreases from 2.66 x 10{sup 11} cm{sup -2} e-v{sup -1}, in pure nitrogen, to 2.5 x 10{sup 11} cm{sup -2} e-v{sup -1} in 1000 ppm hydrogen in nitrogen mixtures, at this temperature. (Author)

  20. An investigation on the tribological properties of Co(ReO4)2/MoS2 composite as potential lubricating additive at various temperatures

    Science.gov (United States)

    Wang, Junhai; Lu, Bing; Zhang, Lixiu; Li, Ting; Yan, Tingting; Li, Mengxu

    2018-02-01

    The Co(ReO4)2 powder was fabricated via the aqueous solution method, and mixed with MoS2 powder using ball milling technique. A certain concentration of Co(ReO4)2/MoS2 composite additive was dispersed into the poly alpha olefin base oil with the assistance of surface active agents. The load-carrying property and lubricating behavior of base oil containing a certain content of Co(ReO4)2/MoS2 composite additive at various temperatures were evaluated by four-ball test and ball-on-disc sliding friction test. The physical properties and friction-reducing mechanism of synthesized composite were ascertained by a series of characterization techniques including X-ray diffraction, scanning electron microscopy-energy dispersive spectroscopy, X-ray photoelectron spectroscopy, and differential thermal analysis/thermogravimetry. The four-ball test results suggested the Co(ReO4)2/MoS2 composite additive could effectively promote the load-carrying capacity of base oil, and decrease the friction coefficient as well as wear scar diameter. Ball-on-disc sliding friction test results showed that the base oil with Co(ReO4)2/MoS2 composite additive possessed lower friction coefficients than that of base oil in the whole temperature range, particularly at high temperatures. The protective layer consisted of composite additive and native oxides from superalloy substrate formed on the worn surface to prevent the direct contact between friction pair. The Co(ReO4)2/MoS2 composite played a dominant role in friction-reducing function in the protective layer at elevated temperatures, and the reason for this was that MoS2 possessed layered structure and superior adsorption capacity, and Co(ReO4)2 had experienced thermal softening with elevated temperatures and maintained shear-susceptible hexagonal structure.

  1. Monolayer MoS2 heterojunction solar cells

    KAUST Repository

    Tsai, Menglin

    2014-08-26

    We realized photovoltaic operation in large-scale MoS2 monolayers by the formation of a type-II heterojunction with p-Si. The MoS 2 monolayer introduces a built-in electric field near the interface between MoS2 and p-Si to help photogenerated carrier separation. Such a heterojunction photovoltaic device achieves a power conversion efficiency of 5.23%, which is the highest efficiency among all monolayer transition-metal dichalcogenide-based solar cells. The demonstrated results of monolayer MoS 2/Si-based solar cells hold the promise for integration of 2D materials with commercially available Si-based electronics in highly efficient devices. © 2014 American Chemical Society.

  2. Role of hydrogen in the chemical vapor deposition growth of MoS2 atomic layers

    Science.gov (United States)

    Li, Xiao; Li, Xinming; Zang, Xiaobei; Zhu, Miao; He, Yijia; Wang, Kunlin; Xie, Dan; Zhu, Hongwei

    2015-04-01

    Hydrogen plays a crucial role in the chemical vapor deposition (CVD) growth of graphene. Here, we have revealed the roles of hydrogen in the two-step CVD growth of MoS2. Our study demonstrates that hydrogen acts as the following: (i) an inhibitor of the thermal-induced etching effect in the continuous film growth process; and (ii) a promoter of the desulfurization reaction by decreasing the S/Mo atomic ratio and the oxidation reaction of the obtained MoSx (0 desulfurization reaction by decreasing the S/Mo atomic ratio and the oxidation reaction of the obtained MoSx (0 < x < 2) films. A high hydrogen content of more than 100% in argon forms nano-sized circle-like defects and damages the continuity and uniformity of the film. Continuous MoS2 films with a high crystallinity and a nearly perfect S/Mo atomic ratio were finally obtained after sulfurization annealing with a hydrogen content in the range of 20%-80%. This insightful understanding reveals the crucial roles of hydrogen in the CVD growth of MoS2 and paves the way for the controllable synthesis of two-dimensional materials. Electronic supplementary information (ESI) available: Low-magnification optical images; Raman spectra of 0% and 5% H2 samples; AFM characterization; Schematic of the film before and after sulfurization annealing; Schematic illustrations of two typical Raman-active phonon modes (E12g, A1g); Raman (mapping) spectra for 40% and 80% H2 samples before and after sulfurization annealing; PL spectra. See DOI: 10.1039/c5nr00904a

  3. Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure.

    Science.gov (United States)

    Joo, Min-Kyu; Moon, Byoung Hee; Ji, Hyunjin; Han, Gang Hee; Kim, Hyun; Lee, Gwanmu; Lim, Seong Chu; Suh, Dongseok; Lee, Young Hee

    2016-10-12

    Layered hexagonal boron nitride (h-BN) thin film is a dielectric that surpasses carrier mobility by reducing charge scattering with silicon oxide in diverse electronics formed with graphene and transition metal dichalcogenides. However, the h-BN effect on electron doping concentration and Schottky barrier is little known. Here, we report that use of h-BN thin film as a substrate for monolayer MoS 2 can induce ∼6.5 × 10 11 cm -2 electron doping at room temperature which was determined using theoretical flat band model and interface trap density. The saturated excess electron concentration of MoS 2 on h-BN was found to be ∼5 × 10 13 cm -2 at high temperature and was significantly reduced at low temperature. Further, the inserted h-BN enables us to reduce the Coulombic charge scattering in MoS 2 /h-BN and lower the effective Schottky barrier height by a factor of 3, which gives rise to four times enhanced the field-effect carrier mobility and an emergence of metal-insulator transition at a much lower charge density of ∼1.0 × 10 12 cm -2 (T = 25 K). The reduced effective Schottky barrier height in MoS 2 /h-BN is attributed to the decreased effective work function of MoS 2 arisen from h-BN induced n-doping and the reduced effective metal work function due to dipole moments originated from fixed charges in SiO 2 .

  4. Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor

    International Nuclear Information System (INIS)

    Vexler, M I; Tyaginov, S E; Shulekin, A F

    2005-01-01

    The value of m h = 0.33 m 0 has been experimentally obtained for hole effective mass in a tunnel-thin (2-3 nm) SiO 2 film. The use of this value ensures the adequate modelling of a direct-tunnelling hole current in MOS devices. For the first time, in order to determine m h , the characteristics of a MOS tunnel emitter transistor have been mathematically processed, that allows for the precise estimation of the effective oxide thickness, as the electron effective mass in SiO 2 is independently known from the literature. The formulae for simulation of currents in a tunnel MOS structure are listed along with the necessary parameter values

  5. Regulation of mariner transposition: the peculiar case of Mos1.

    Directory of Open Access Journals (Sweden)

    Jérôme Jaillet

    Full Text Available BACKGROUND: Mariner elements represent the most successful family of autonomous DNA transposons, being present in various plant and animal genomes, including humans. The introduction and co-evolution of mariners within host genomes imply a strict regulation of the transposon activity. Biochemical data accumulated during the past decade have led to a convergent picture of the transposition cycle of mariner elements, suggesting that mariner transposition does not rely on host-specific factors. This model does not account for differences of transposition efficiency in human cells between mariners. We thus wondered whether apparent similarities in transposition cycle could hide differences in the intrinsic parameters that control mariner transposition. PRINCIPAL FINDINGS: We find that Mos1 transposase concentrations in excess to the Mos1 ends prevent the paired-end complex assembly. However, we observe that Mos1 transposition is not impaired by transposase high concentration, dismissing the idea that transposase over production plays an obligatory role in the down-regulation of mariner transposition. Our main finding is that the paired-end complex is formed in a cooperative way, regardless of the transposase concentration. We also show that an element framed by two identical ITRs (Inverted Terminal Repeats is more efficient in driving transposition than an element framed by two different ITRs (i.e. the natural Mos1 copy, the latter being more sensitive to transposase concentration variations. Finally, we show that the current Mos1 ITRs correspond to the ancestral ones. CONCLUSIONS: We provide new insights on intrinsic properties supporting the self-regulation of the Mos1 element. These properties (transposase specific activity, aggregation, ITR sequences, transposase concentration/transposon copy number ratio... could have played a role in the dynamics of host-genomes invasion by Mos1, accounting (at least in part for the current low copy number of

  6. Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors

    Science.gov (United States)

    Nishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, Tamotsu

    2017-10-01

    To investigate current linearity and operation stability of metal-oxide-semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 °C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of I D-V G curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance-voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMT showed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures.

  7. A novel technique to measure interface trap density in a GaAs MOS capacitor using time-varying magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Choudhury, Aditya N. Roy, E-mail: aditya@physics.iisc.ernet.in; Venkataraman, V. [Dept. of Physics, Indian Institute of Science, Bangalore – 560012 (India)

    2016-05-23

    Interface trap density (D{sub it}) in a GaAs metal-oxide-semiconductor (MOS) capacitor can be measured electrically by measuring its impedance, i.e. by exciting it with a small signal voltage source and measuring the resulting current through the circuit. We propose a new method of measuring D{sub it} where the MOS capacitor is subjected to a (time-varying) magnetic field instead, which produces an effect equivalent to a (time-varying) voltage drop across the sample. This happens because the electron chemical potential of GaAs changes with a change in an externally applied magnetic field (unlike that of the gate metal); this is not the voltage induced by Faraday’s law of electromagnetic induction. So, by measuring the current through the MOS, D{sub it} can be found similarly. Energy band diagrams and equivalent circuits of a MOS capacitor are drawn in the presence of a magnetic field, and analyzed. The way in which a magnetic field affects a MOS structure is shown to be fundamentally different compared to an electrical voltage source.

  8. Smoking characteristics of Polish immigrants in Dublin.

    LENUS (Irish Health Repository)

    Kabir, Zubair

    2008-01-01

    BACKGROUND: This study examined two main hypotheses: a) Polish immigrants\\' smoking estimates are greater than their Irish counterparts (b) Polish immigrants purchasing cigarettes from Poland smoke "heavier" (>\\/= 20 cigarettes a day) when compared to those purchasing cigarettes from Ireland. The study also set out to identify significant predictors of \\'current\\' smoking (some days and everyday) among the Polish immigrants. METHODS: Dublin residents of Polish origin (n = 1,545) completed a previously validated Polish questionnaire in response to an advertisement in a local Polish lifestyle magazine over 5 weekends (July-August, 2007). The Office of Tobacco Control telephone-based monthly survey data were analyzed for the Irish population in Dublin for the same period (n = 484). RESULTS: Age-sex adjusted smoking estimates were: 47.6% (95% Confidence Interval [CI]: 47.3%; 48.0%) among the Poles and 27.8% (95% CI: 27.2%; 28.4%) among the general Irish population (p < 0.001). Of the 57% of smokers (n = 345\\/606) who purchased cigarettes solely from Poland and the 33% (n = 198\\/606) who purchased only from Ireland, 42.6% (n = 147\\/345) and 41.4% (n = 82\\/198) were "heavy" smokers, respectively (p = 0.79). Employment (Odds Ratio [OR]: 2.89; 95% CI: 1.25-6.69), lower education (OR: 3.76; 95%CI: 2.46-5.74), and a longer stay in Ireland (>24 months) were significant predictors of current smoking among the Poles. An objective validation of the self-reported smoking history of a randomly selected sub-sample immigrant group, using expired carbon monoxide (CO) measurements, showed a highly significant correlation coefficient (r = 0.64) of expired CO levels with the reported number of cigarettes consumed (p < 0.0001). CONCLUSION: Polish immigrants\\' smoking estimates are higher than their Irish counterparts, and particularly if employed, with only primary-level education, and are overseas >2 years.

  9. APS 3D: a new benchmark in aspherical polishing

    Science.gov (United States)

    Gauch, Daniel; Mikulic, Dalibor; Veit, Christian

    2017-10-01

    The APS 3D system performs polishing and form correction in one step in order to reduce overall process time, reduce the number of polishing steps required and eliminate the need for highly skilled operators while providing a repeatable polishing process. This new 3D Polishing system yields better surface quality, and a better slope error, automatically determining the optimum speeds, feed rates and polish pressures to achieve a deterministic process based on the required quality parameters input by the operator. The process flow is always the same to ensure consistent quality and target quality values are defined before polishing begins.

  10. Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

    KAUST Repository

    Wang, Zhenwei

    2016-08-30

    A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.

  11. Enhanced photoelectrochemical water splitting of BiVO4 photonic crystal photoanode by decorating with MoS2 nanosheets

    Science.gov (United States)

    Nan, Feng; Cai, Tianyi; Ju, Sheng; Fang, Liang

    2018-04-01

    Bismuth vanadate (BiVO4) has been considered as one of the promising Photoelectrochemical (PEC) photoanode materials. However, the performances remain poorly rated due to inefficient carrier separation, short carrier diffusion length, and sluggish water oxidation kinetics. Herein, a photoanode consisting of MoS2 nanosheet coating on the three-dimensional ordered BiVO4 inverse opal is fabricated by a facile combination of nanosphere lithography and hydrothermal methods. By taking advantage of the photonic crystal and two-dimensional material, the optimized MoS2/BiVO4 inverse opal photoanode exhibits a 560% improvement of the photocurrent density and threefold enhancement of the incident photon-to-current efficiency than that of the pristine BiVO4 film photoanode. Systematic studies reveal that the excellent PEC activity should be attributed to enhanced light harvesting and charge separation efficiency.

  12. Polish Academy of Sciences Great Dictionary of Polish [Wielki słownik języka polskiego PAN

    Directory of Open Access Journals (Sweden)

    Piotr Žmigrodzki

    2014-12-01

    Full Text Available The paper describes a lexicographical project involving the development of the newest general dictionary of the Polish language: the Polish Academy of Sciences Great Dictionary of Polish [Wielki słownik języka polskiego PAN]. The project is coordinated by the Institute of Polish Language at the Polish Academy of Sciences and carried out in collaboration with linguists and lexicographers from several other Polish academic centres. The paper offers a brief description of the genesis of the project and the scope of information included in the dictionary, the organisation of work, the life of the dictionary on the Web as well as the plans for the future.

  13. Radiation effects on custom MOS devices

    International Nuclear Information System (INIS)

    Harris, R.

    1999-05-01

    This Thesis consists of four chapters: The first is primarily for background information on the effects of radiation on MOS devices and the theory of wafer bonding; the second gives a full discussion of all practical work carried out for manufacture of Field Effect test Capacitors, the third discusses manufacture of vacuum insulator Field Effect Transistors (FET's) and the fourth discusses the testing of these devices. Using a thermally bonded field effect capacitor structure, a vacuum dielectric was studied for use in high radiation environments with a view to manufacturing a CMOS compatible, micro machined transistor. Results are given in the form of high frequency C-V curves before and after a 120 kGy(Si), 12 MRad(Si), dose from a Co 60 source showing a 1 Volt shift. The work is then extended to the design and manufacture of a micro machined, under-etch technique, Field Effect Transistor for use in high radiation areas. Results are shown for Threshold, Subthreshold and Transfer characteristics before and after irradiation up to a total dose of 100kGy or 10MRad. The conclusion from this work is that it should be possible to commercially manufacture practical vacuum dielectric field effect transistors which are radiation hard to at least 120 kGy(Si). (author)

  14. MOS Current Mode Logic Near Threshold Circuits

    Directory of Open Access Journals (Sweden)

    Alexander Shapiro

    2014-06-01

    Full Text Available Near threshold circuits (NTC are an attractive and promising technology that provides significant power savings with some delay penalty. The combination of NTC technology with MOS current mode logic (MCML is examined in this work. By combining MCML with NTC, the constant power consumption of MCML is reduced to leakage power levels that can be tolerated in certain modern applications. Additionally, the speed of NTC is improved due to the high speed nature of MCML technology. A 14 nm Fin field effect transistor (FinFET technology is used to evaluate these combined circuit techniques. A 32-bit Kogge Stone adder is chosen as a demonstration vehicle for feasibility analysis. MCML with NTC is shown to yield enhanced power efficiency when operated above 1 GHz with a 100% activity factor as compared to standard CMOS. MCML with NTC is more power efficient than standard CMOS beyond 9 GHz over a wide range of activity factors. MCML with NTC also exhibits significantly lower noise levels as compared to standard CMOS. The results of the analysis demonstrate that pairing NTC and MCML is efficient when operating at high frequencies and activity factors.

  15. Effect of coarse grinding, overglazing, and 2 polishing systems on the flexural strength, surface roughness, and phase transformation of yttrium-stabilized tetragonal zirconia.

    Science.gov (United States)

    Mohammadi-Bassir, Mahshid; Babasafari, Mansoure; Rezvani, Mohammad Bagher; Jamshidian, Mahdieh

    2017-11-01

    Limited information is available for the best polishing systems and methods to obtain minimally abrasive monolithic zirconia surfaces after contouring and occlusal adjustment. The purpose of this in vitro study was to evaluate the effect of grinding and polishing procedures on the flexural strength, quality and quantity of surface roughness, topography, and phase transformation of a zirconia-based ceramic system. Fifty bar-shaped yttrium-stabilized zirconium oxide specimens (20×4×2 mm) were cut from presintered zirconia blanks. The specimens were wet-polished and divided into 5 groups (n=10): standard polishing without any surface treatment (group SP); grinding with a diamond rotary instrument (group Gr); grinding with a diamond rotary instrument (DRI) and over-glazing (group Gl); grinding with a DRI and polishing with an intraoral zirconia polishing kit in a 2-step procedure (group BP); and grinding with a DRI and polishing with an intraoral polishing kit (group MP). The Ra and Rz surface roughness values (μm) were measured with a profilometer. One specimen of each group was subjected to x-ray diffraction (XRD) to estimate the monoclinic phase and evaluated using scanning electron microscopy (SEM) for surface topography. The 3-point flexural strength of the bars was measured in a universal testing machine at a crosshead speed of 0.5 mm/min. The mean flexural strength (MPa) and surface roughness values were calculated, and the results were analyzed using 1-way ANOVA and Tukey honest significant difference tests (α=.05). Statistically significant differences were noted among the experimental groups for Ra, Rz (Pgrinding that were smoothened by glazing and polishing. Roughness increased significantly after grinding, but polishing and glazing similarly diminished it. Glazing after grinding significantly decreased the flexural strength values, but polishing did not. Copyright © 2017 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier

  16. Highly Enhanced Gas Adsorption Properties in Vertically Aligned MoS2 Layers.

    Science.gov (United States)

    Cho, Soo-Yeon; Kim, Seon Joon; Lee, Youhan; Kim, Jong-Seon; Jung, Woo-Bin; Yoo, Hae-Wook; Kim, Jihan; Jung, Hee-Tae

    2015-09-22

    In this work, we demonstrate that gas adsorption is significantly higher in edge sites of vertically aligned MoS2 compared to that of the conventional basal plane exposed MoS2 films. To compare the effect of the alignment of MoS2 on the gas adsorption properties, we synthesized three distinct MoS2 films with different alignment directions ((1) horizontally aligned MoS2 (basal plane exposed), (2) mixture of horizontally aligned MoS2 and vertically aligned layers (basal and edge exposed), and (3) vertically aligned MoS2 (edge exposed)) by using rapid sulfurization method of CVD process. Vertically aligned MoS2 film shows about 5-fold enhanced sensitivity to NO2 gas molecules compared to horizontally aligned MoS2 film. Vertically aligned MoS2 has superior resistance variation compared to horizontally aligned MoS2 even with same surface area exposed to identical concentration of gas molecules. We found that electrical response to target gas molecules correlates directly with the density of the exposed edge sites of MoS2 due to high adsorption of gas molecules onto edge sites of vertically aligned MoS2. Density functional theory (DFT) calculations corroborate the experimental results as stronger NO2 binding energies are computed for multiple configurations near the edge sites of MoS2, which verifies that electrical response to target gas molecules (NO2) correlates directly with the density of the exposed edge sites of MoS2 due to high adsorption of gas molecules onto edge sites of vertically aligned MoS2. We believe that this observation extends to other 2D TMD materials as well as MoS2 and can be applied to significantly enhance the gas sensor performance in these materials.

  17. Identification of protein tyrosine phosphatase 1B and casein as substrates for 124-v-Mos

    Directory of Open Access Journals (Sweden)

    Stabel Silvia

    2002-04-01

    Full Text Available Abstract Background The mos proto-oncogene encodes a cytoplasmic serine/threonine-specific protein kinase with crucial function during meiotic cell division in vertebrates. Based on oncogenic amino acid substitutions the viral derivative, 124-v-Mos, displays constitutive protein kinase activity and functions independent of unknown upstream effectors of mos protein kinase. We have utilized this property of 124-v-Mos and screened for novel mos substrates in immunocomplex kinase assays in vitro. Results We generated recombinant 124-v-Mos using the baculovirus expression system in Spodoptera frugiperda cells and demonstrated constitutive kinase activity by the ability of 124-v-Mos to auto-phosphorylate and to phosphorylate vimentin, a known substrate of c-Mos. Using this approach we analyzed a panel of acidic and basic substrates in immunocomplex protein kinase assays and identified novel in vitro substrates for 124-v-Mos, the protein tyrosine phosphatase 1B (PTP1B, alpha-casein and beta-casein. We controlled mos-specific phosphorylation of PTP1B and casein in comparative assays using a synthetic kinase-inactive 124-v-Mos mutant and further, tryptic digests of mos-phosphorylated beta-casein identified a phosphopeptide specifically targeted by wild-type 124-v-Mos. Two-dimensional phosphoamino acid analyses showed that 124-v-mos targets serine and threonine residues for phosphorylation in casein at a 1:1 ratio but auto-phosphorylation occurs predominantly on serine residues. Conclusion The mos substrates identified in this study represent a basis to approach the identification of the mos-consensus phosphorylation motif, important for the development of specific inhibitors of the Mos protein kinase.

  18. Comparison of Titration ICP and XRF Spectrometry Methods in Determination of Cerium in Lens Polishing Powder

    International Nuclear Information System (INIS)

    Ninlaphruk, Sumalee; Pichestapong, Pipat; Mungpayabal, Harinate; Jiyavaranant, Thitima; Srisukho, Supapan; Chaisai, Prapassurn

    2004-10-01

    Three analytical methods in determination of cerium in cerium oxide separated from monazite ore for producing lens polishing powder were compared. These methods are titration ICP and XRF spectrometry techniques. The cerium oxide sample with estimated 45% cerium content needed to be digested and converted into solution before the analysis. The analytical results shown significantly no difference between each method. However, the titration method was found to be more convenient and suitable for quality control in the production of cerium oxide as it does not require standard cerium and the complicated analytical instruments

  19. Probing low noise at the MOS interface with a spin-orbit qubit.

    Energy Technology Data Exchange (ETDEWEB)

    Jock, Ryan Michael; Jacobson, Noah Tobias; Harvey-Collard, Patrick; Mounce, Andrew; Srinivasa, Vanita; Ward, Daniel Robert; Anderson, John Moses; Manginell, Ronald P.; Wendt, Joel R.; Rudolph, Martin; Pluym, Tammy; Gamble, John King,; Baczewski, Andrew David; Witzel, Wayne; Carroll, Malcolm S.

    2017-07-01

    The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet- triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 μs using 99.95% 28Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise. isotopically enhanced silicon ST qubit systems

  20. Interface Engineering with MoS2 -Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory.

    Science.gov (United States)

    Wang, Xue-Feng; Tian, He; Zhao, Hai-Ming; Zhang, Tian-Yu; Mao, Wei-Quan; Qiao, Yan-Cong; Pang, Yu; Li, Yu-Xing; Yang, Yi; Ren, Tian-Ling

    2018-01-01

    Metal oxide-based resistive random access memory (RRAM) has attracted a lot of attention for its scalability, temperature robustness, and potential to achieve machine learning. However, a thick oxide layer results in relatively high program voltage while a thin one causes large leakage current and a small window. Owing to these fundamental limitations, by optimizing the oxide layer itself a novel interface engineering idea is proposed to reduce the programming voltage, increase the uniformity and on/off ratio. According to this idea, a molybdenum disulfide (MoS 2 )-palladium nanoparticles hybrid structure is used to engineer the oxide/electrode interface of hafnium oxide (HfO x )-based RRAM. Through its interface engineering, the set voltage can be greatly lowered (from -3.5 to -0.8 V) with better uniformity under a relatively thick HfO x layer (≈15 nm), and a 30 times improvement of the memory window can be obtained. Moreover, due to the atomic thickness of MoS 2 film and high transmittance of ITO, the proposed RRAM exhibits high transparency in visible light. As the proposed interface-engineering RRAM exhibits good transparency, low SET voltage, and a large resistive switching window, it has huge potential in data storage in transparent circuits and wearable electronics with relatively low supply voltage. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Two-dimensional MoS2 electromechanical actuators

    Science.gov (United States)

    Hung, Nguyen T.; Nugraha, Ahmad R. T.; Saito, Riichiro

    2018-02-01

    We investigate the electromechanical properties of two-dimensional MoS2 monolayers with 1H, 1T, and 1T‧ structures as a function of charge doping by using density functional theory. We find isotropic elastic moduli in the 1H and 1T structures, while the 1T‧ structure exhibits an anisotropic elastic modulus. Moreover, the 1T structure is shown to have a negative Poisson’s ratio, while Poisson’s ratios of the 1H and 1T‧ are positive. By charge doping, the monolayer MoS2 shows a reversible strain and work density per cycle ranging from  -0.68% to 2.67% and from 4.4 to 36.9 MJ m-3, respectively, making them suitable for applications in electromechanical actuators. We also examine the stress generated in the MoS2 monolayers and we find that 1T and 1T‧ MoS2 monolayers have relatively better performance than 1H MoS2 monolayer. We argue that such excellent electromechanical performance originate from the electrical conductivity of the metallic 1T and semimetallic 1T‧ structures and also from their high Young’s modulus of about 150-200 GPa.

  2. 21 CFR 872.6030 - Oral cavity abrasive polishing agent.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Oral cavity abrasive polishing agent. 872.6030... (CONTINUED) MEDICAL DEVICES DENTAL DEVICES Miscellaneous Devices § 872.6030 Oral cavity abrasive polishing agent. (a) Identification. An oral cavity abrasive polishing agent is a device in paste or powder form...

  3. Chemical Mechanical Polishing Optimization for 4H-SiC

    National Research Council Canada - National Science Library

    Neslen, Craig

    2000-01-01

    .... Preliminary chemical mechanical polishing (CMP) studies of 1 3/8" 4H-SiC wafers were performed in an attempt to identify the polishing parameter values that result in a maximum material removal rate and thus reduce substrate polishing time...

  4. Microbiological flora and nail polish: a brief report.

    Science.gov (United States)

    Rayan, G M; Flournoy, D J; Schlageter, P

    1994-11-01

    Removing nail polish and prosthetic nails from operating room (OR) personnel prior to scrubbing and from patients prior to hand surgery is recommended but not practiced in many hospitals. There is concern that nail polish can act as a vehicle for the transfer of infectious agents. This study was designed to determine the incidence of microbiological flora of nail polish in a clinical setting.

  5. Monitoring of Robot Assisted Polishing through parameters of acoustic emission

    DEFF Research Database (Denmark)

    Lazarev, Ruslan; Top, Søren; Bilberg, Arne

    The polishing process is essential for the surface generation of machine tooling components in advanced manufacturing. While robot assisted polishing is faster and more consistent than manual polishing, it can still consume a significant part of ma- chining time and operator presence time...

  6. Polish Qualitative Sociology: The General Features and Development

    OpenAIRE

    Konecki, Krzysztof Tomasz

    2005-01-01

    The article explores the development of Polish qualitative sociology in Poland by presenting its main intellectual routes and some of the general features of Polish sociology. Romanticism and inductionmethod are crucial elements for the development of this discipline in Poland and contribute to its. unigueness. The role of Florian Znaniecki in creating the Polish qualitative sociology is also underlined. Krzysztof Konecki

  7. Professional Training of Economists at Polish Universities

    Science.gov (United States)

    Ogienko, Olena

    2016-01-01

    Polish experience in professional training of economists at university has been generalized. Structural, content and procedural peculiarities of the training have been defined. It has been proved that key factors for reforming economic education in Poland are globalization, internationalization, integration, technologization and informatization.…

  8. Knowledge Mobilisation in the Polish Education System

    Science.gov (United States)

    Fazlagic, Jan; Erkol, Arif

    2015-01-01

    Poland has made substantial progress in improving the quality of its education system in recent years. This paper aims to describe the situation of the Polish education system from a knowledge management perspective and, to some extent, through innovation policies in education. The many challenges, this paper argues, can be tackled only through…

  9. Sexual Health of Polish Athletes with Disabilities

    Directory of Open Access Journals (Sweden)

    Ryszard Plinta

    2015-06-01

    Full Text Available The purpose of this study was to determine sexual functioning of Polish athletes with disabilities (including paralympians. The study encompassed 218 people with physical disabilities, aged between 18 and 45 (149 men and 69 women. The entire research population was divided into three groups: Polish paralympians (n = 45, athletes with disabilities (n = 126 and non-athletes with disabilities (n = 47. The quality of sexual life of Polish paralympians was measured by using the Polish version of Female Sexual Function Index and International Index of Erectile Function. Clinically significant erectile dysfunctions were most often diagnosed in non-athletes (83.33% with 50% result of severe erectile dysfunctions, followed by athletes and paralympians with comparable results of 56.98% and 54.17% respectively (p = 0.00388. Statistically significant clinical sexual dysfunctions concerned lubrication, orgasm as well as pain domains, and prevailed among female non-athletes (68.42%, 68.42% and 57.89%. Practising sports at the highest level has a favourable effect on the sexuality of men and women with physical disabilities. Men with physical disabilities manifest more sexual disorders than women, an aspect which should be considered by health-care professionals working with people with disabilities.

  10. Directory of Polish Officials: A Reference Aid

    Science.gov (United States)

    1989-04-01

    Jan 86 Deputy Director Mondalski, Janusz Aug 83 Polish Steamship Company (Polski Zegluga Morska ) (PZM) Director Andruczyk, Mieczyslaw Jan...2<> Polski Kosciol Chrzescijan Baptystow 12° Polski Linie Oceaniczne ’"- Polski Towarzystwo Ekonomiczne ’’° Polski Zegluga Morska 102 Polski

  11. Polish students’ opinion about medicinal cannabis

    Directory of Open Access Journals (Sweden)

    Rafał Mazur

    2017-09-01

    Conclusions: Polish students seem to be ready for introduction into medical marijuana and are aware of its therapeutic potential. The majority is in favor of sales in a controlled manner. The task of researchers should be accurate examination of the effectiveness of specific cannabinoids in the treatment of diseases.

  12. Transformation of the Polish Banking Sector

    Directory of Open Access Journals (Sweden)

    Marek Stefański

    2009-07-01

    Full Text Available In the post-war period the banking system in Poland underwent two important system transitions: after 1946 and after 1989. The third transformation began after May 1, 2004, but it did not have a systemic character. The Polish banking sector started to operate on the Single European Market. The first part of the paper is devoted to the problems of the banks transformations after 1989 with a special focus on the quantitative development of banks in 19892008, and on subsequent privatisation and consolidation processes. The former intensified in 19891999, and the latter in 19992002. The consolidation process was very noticeable in the sector of cooperative banks after 1994. The second part of the paper includes an economic and financial analysis of the banks. A lot of attention was paid to the liquidity of the banking sector. It was assessed as good, which was confirmed by a short-term rating of Moodys and by the Financial Stability Report 2009, published by the National Bank of Poland in June 2009. The comparison of the net profit of the banking sector in 19972008 shows its dependence on the economic situation and policy. The number of banks with capital adequacy ratio well above the minimum required by the banking supervision is rising. The financial power ratings are not favorable for the domestic banks. The third part of the paper focuses on the development directions of the Polish banking sector. It may be concluded on the basis of the analysis that privatisation and consolidation processes will be continued. They will concentrate on the capital of foreign banks already operating in Poland. As compared with individual foreign banks, the potential of the Polish banking sector is week. The fourth part of the paper focuses on the presentation Polish banking sector in the context of European Union banking sector. The paper finishes with conclusions. Generally, Polish banks have to implement a strategy to enable them to compete on the Single

  13. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

    International Nuclear Information System (INIS)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-01-01

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter

  14. Plasmons on the edge of MoS2 nanostructures

    DEFF Research Database (Denmark)

    Andersen, Kirsten; Jacobsen, Karsten Wedel; Thygesen, Kristian Sommer

    2014-01-01

    Using ab initio calculations we predict the existence of one-dimensional (1D), atomically confined plasmons at the edges of a zigzag MoS2 nanoribbon. The strongest plasmon originates from a metallic edge state localized on the sulfur dimers decorating the Mo edge of the ribbon. A detailed analysis...... of the dielectric function reveals that the observed deviations from the ideal 1D plasmon behavior result from single-particle transitions between the metallic edge state and the valence and conduction bands of the MoS2 sheet. The Mo and S edges of the ribbon are clearly distinguishable in calculated spatially...... resolved electron energy loss spectrum owing to the different plasmonic properties of the two edges. The edge plasmons could potentially be utilized for tuning the photocatalytic activity of MoS2 nanoparticles....

  15. Thermal conductivity of bulk and monolayer MoS2

    KAUST Repository

    Gandi, Appala

    2016-02-26

    © Copyright EPLA, 2016. We show that the lattice contribution to the thermal conductivity of MoS2 strongly dominates the carrier contribution in a broad temperature range from 300 to 800 K. Since theoretical insight into the lattice contribution is largely missing, though it would be essential for materials design, we solve the Boltzmann transport equation for the phonons self-consistently in order to evaluate the phonon lifetimes. In addition, the length scale for transition between diffusive and ballistic transport is determined. The low out-of-plane thermal conductivity of bulk MoS2 (2.3 Wm-1K-1 at 300 K) is useful for thermoelectric applications. On the other hand, the thermal conductivity of monolayer MoS2 (131 Wm-1K-1 at 300 K) is comparable to that of Si.

  16. Ultrafast photocurrents in monolayer MoS2

    Science.gov (United States)

    Parzinger, Eric; Wurstbauer, Ursula; Holleitner, Alexander W.

    Two-dimensional transition metal dichalcogenides such as MoS2 have emerged as interesting materials for optoelectronic devices. In particular, the ultrafast dynamics and lifetimes of photoexcited charge carriers have attracted great interest during the last years. We investigate the photocurrent response of monolayer MoS2 on a picosecond time scale utilizing a recently developed pump-probe spectroscopy technique based on coplanar striplines. We discuss the ultrafast dynamics within MoS2 including photo-thermoelectric currents and the impact of built-in fields due to Schottky barriers as well as the Fermi level pinning at the contact region. We acknowledge support by the ERC via Project 'NanoREAL', the DFG via excellence cluster 'Nanosystems Initiative Munich' (NIM), and through the TUM International Graduate School of Science and Engineering (IGSSE) and BaCaTeC.

  17. Single-layer MoS2 electronics.

    Science.gov (United States)

    Lembke, Dominik; Bertolazzi, Simone; Kis, Andras

    2015-01-20

    CONSPECTUS: Atomic crystals of two-dimensional materials consisting of single sheets extracted from layered materials are gaining increasing attention. The most well-known material from this group is graphene, a single layer of graphite that can be extracted from the bulk material or grown on a suitable substrate. Its discovery has given rise to intense research effort culminating in the 2010 Nobel Prize in physics awarded to Andre Geim and Konstantin Novoselov. Graphene however represents only the proverbial tip of the iceberg, and increasing attention of researchers is now turning towards the veritable zoo of so-called "other 2D materials". They have properties complementary to graphene, which in its pristine form lacks a bandgap: MoS2, for example, is a semiconductor, while NbSe2 is a superconductor. They could hold the key to important practical applications and new scientific discoveries in the two-dimensional limit. This family of materials has been studied since the 1960s, but most of the research focused on their tribological applications: MoS2 is best known today as a high-performance dry lubricant for ultrahigh-vacuum applications and in car engines. The realization that single layers of MoS2 and related materials could also be used in functional electronic devices where they could offer advantages compared with silicon or graphene created a renewed interest in these materials. MoS2 is currently gaining the most attention because the material is easily available in the form of a mineral, molybdenite, but other 2D transition metal dichalcogenide (TMD) semiconductors are expected to have qualitatively similar properties. In this Account, we describe recent progress in the area of single-layer MoS2-based devices for electronic circuits. We will start with MoS2 transistors, which showed for the first time that devices based on MoS2 and related TMDs could have electrical properties on the same level as other, more established semiconducting materials. This

  18. Fabrication and Characterization of FeNiCr Matrix-TiC Composite for Polishing CVD Diamond Film

    Institute of Scientific and Technical Information of China (English)

    Zhuji Jin; Zewei Yuan; Renke Kang; Boxian Dong

    2009-01-01

    Dynamic friction polishing (DFP) is one of the most promising methods appropriate for polishing CVD diamond film with high efficiency and low cost.By this method CVD diamond film is polished through being simply pressed against a metal disc rotating at a high speed utilizing the thermochemical reaction occurring as a result of dynamic friction between them in the atmosphere.However, the relatively soft materials such as stainless steel, cast iron and nickel alloy widely used for polishing CVD diamond film are easy to wear and adhere to diamond film surface, which may further lead to low efficiency and poor polishing quality.In this paper, FeNiCr matrix-TiC composite used as grinding wheel for polishing CVD diamond film was obtained by combination of mechanical alloying (MA) and spark plasma sintering (SPS).The process of ball milling,composition, density, hardness, high-temperature oxidation resistance and wear resistance of the sintered piece were analyzed.The results show that TiC was introduced in MA-SPS process and had good combination with FeNiCr matrix and even distribution in the matrix.The density of composite can be improved by mechanical alloying.The FeNiCr matrix-TiC composite obtained at 1273 K was found to be superior to at 1173 K sintering in hardness, high-temperature oxidation resistance and wearability.These properties are more favorable than SUS304 for the preparation of high-performance grinding wheel for polishing CVD diamond film.

  19. Surface Roughness and Gloss of Actual Composites as Polished With Different Polishing Systems.

    Science.gov (United States)

    Rodrigues-Junior, S A; Chemin, P; Piaia, P P; Ferracane, J L

    2015-01-01

    This in vitro study evaluated the effect of polishing with different polishing systems on the surface roughness and gloss of commercial composites. One hundred disk-shaped specimens (10 mm in diameter × 2 mm thick) were made with Filtek P-90, Filtek Z350 XT, Opallis, and Grandio. The specimens were manually finished with #400 sandpaper and polished by a single operator using three multistep systems (Superfix, Diamond Pro, and Sof-lex), one two-step system (Polidores DFL), and one one-step system (Enhance), following the manufacturer's instructions. The average surface roughness (μm) was measured with a surface profilometer (TR 200 Surface Roughness Tester), and gloss was measured using a small-area glossmeter (Novo-Curve, Rhopoint Instrumentation, East Sussex, UK). Data were analyzed by two-way analysis of variance and Tukey's test (α=0.05). Statistically significant differences in surface roughness were identified by varying the polishing systems (pGloss was influenced by the composites (pone-step system, Enhance, produced the lowest gloss for all composites. Surface roughness and gloss were affected by composites and polishing systems. The interaction between both also influenced these surface characteristics, meaning that a single polishing system will not behave similarly for all composites. The multistep systems produced higher gloss, while the one-step system produced the highest surface roughness and the lowest gloss of all.

  20. On-stack two-dimensional conversion of MoS2 into MoO3

    Science.gov (United States)

    Yeoung Ko, Taeg; Jeong, Areum; Kim, Wontaek; Lee, Jinhwan; Kim, Youngchan; Lee, Jung Eun; Ryu, Gyeong Hee; Park, Kwanghee; Kim, Dogyeong; Lee, Zonghoon; Lee, Min Hyung; Lee, Changgu; Ryu, Sunmin

    2017-03-01

    Chemical transformation of existing two-dimensional (2D) materials can be crucial in further expanding the 2D crystal palette required to realize various functional heterostructures. In this work, we demonstrate a 2D ‘on-stack’ chemical conversion of single-layer crystalline MoS2 into MoO3 with a precise layer control that enables truly 2D MoO3 and MoO3/MoS2 heterostructures. To minimize perturbation of the 2D morphology, a nonthermal oxidation using O2 plasma was employed. The early stage of the reaction was characterized by a defect-induced Raman peak, drastic quenching of photoluminescence (PL) signals and sub-nm protrusions in atomic force microscopy images. As the reaction proceeded from the uppermost layer to the buried layers, PL and optical second harmonic generation signals showed characteristic modulations revealing a layer-by-layer conversion. The plasma-generated 2D oxides, confirmed as MoO3 by x-ray photoelectron spectroscopy, were found to be amorphous but extremely flat with a surface roughness of 0.18 nm, comparable to that of 1L MoS2. The rate of oxidation quantified by Raman spectroscopy decreased very rapidly for buried sulfide layers due to protection by the surface 2D oxides, exhibiting a pseudo-self-limiting behavior. As exemplified in this work, various on-stack chemical transformations can be applied to other 2D materials in forming otherwise unobtainable materials and complex heterostructures, thus expanding the palette of 2D material building blocks.

  1. Rendering high charge density of states in ionic liquid-gated MoS 2 transistors

    NARCIS (Netherlands)

    Lee, Y.; Lee, J.; Kim, S.; Park, H.S.

    2014-01-01

    We investigated high charge density of states (DOS) in the bandgap of MoS2 nanosheets with variable temperature measurements on ionic liquid-gated MoS2 transistors. The thermally activated charge transport indicates that the electrical current in the two-dimensional MoS 2 nanosheets under high

  2. Nanoscale MOS devices: device parameter fluctuations and low-frequency noise (Invited Paper)

    Science.gov (United States)

    Wong, Hei; Iwai, Hiroshi; Liou, J. J.

    2005-05-01

    It is well-known in conventional MOS transistors that the low-frequency noise or flicker noise is mainly contributed by the trapping-detrapping events in the gate oxide and the mobility fluctuation in the surface channel. In nanoscale MOS transistors, the number of trapping-detrapping events becomes less important because of the large direct tunneling current through the ultrathin gate dielectric which reduces the probability of trapping-detrapping and the level of leakage current fluctuation. Other noise sources become more significant in nanoscale devices. The source and drain resistance noises have greater impact on the drain current noise. Significant contribution of the parasitic bipolar transistor noise in ultra-short channel and channel mobility fluctuation to the channel noise are observed. The channel mobility fluctuation in nanoscale devices could be due to the local composition fluctuation of the gate dielectric material which gives rise to the permittivity fluctuation along the channel and results in gigantic channel potential fluctuation. On the other hand, the statistical variations of the device parameters across the wafer would cause the noise measurements less accurate which will be a challenge for the applicability of analytical flicker noise model as a process or device evaluation tool for nanoscale devices. Some measures for circumventing these difficulties are proposed.

  3. Effects of air-polishing powders on color stability of composite resins.

    Science.gov (United States)

    Güler, Ahmet Umut; Duran, Ibrahim; Yücel, Ali Çağin; Ozkan, Pelin

    2011-10-01

    The purpose of this study was to investigate the effect of different air-polishing powders on the color stability of different types of composite resin restorative materials. Thirty cylindrical specimens (15×2 mm) were prepared for each of 7 composite resin restorative materials. All specimens were polished with a series of aluminum oxide polishing discs (Sof-Lex). The prepared specimens of each composite resin were randomly divided into 3 groups of 10 specimens each, for control (Group-C) and two air-powder applications (Group-CP: Cavitron Prophy-Jet; Group-PS: Sirona ProSmile prophylaxis powder). A standard air-polishing unit (ProSmile Handly) was used. All specimens were air-powdered for 10 s at 4-bar pressure. The distance of the spray nosel from the specimens was approximately 10 mm and angulation of the nosel was 90°. Specimens were stored in 100 mL of coffee (Nescafe Classic) for 24 h at 37°C. Color measurement of all specimens was recorded before and after exposure to staining agent with a colorimeter (Minolta CR-300). Color differences (∆E*) between the 2 color measurements (baseline and after 24 h storage) were calculated. The data were analyzed with a 2-way ANOVA test, and mean values were compared by the Tukey HSD test (p.05) and these groups demonstrated the highest ∆E* values. For Filtek Silorane and IntenS, the highest ∆E* values were observed in Group-PS. The lowest ∆E* values for all composite resin groups were observed in Group-C. When comparing the 7 composite resin restorative materials, Aelite Aesthetic Enemal demonstrated significantly less ∆E* values than the other composite resins tested. The highest ∆E* values were observed in Quixfil. Except for Quixfil, all control groups of composite resins that were polished Sof-Lex exhibited clinically acceptable ∆E values (<3.7). Air-polishing applications increased the color change for all composite resin restorative materials tested. Composite restorations may require re-polishing

  4. Effects of air-polishing powders on color stability of composite resins

    Directory of Open Access Journals (Sweden)

    Ahmet Umut Güler

    2011-10-01

    Full Text Available OBJECTIVES: The purpose of this study was to investigate the effect of different air-polishing powders on the color stability of different types of composite resin restorative materials. MATERIAL AND METHODS: Thirty cylindrical specimens (15×2 mm were prepared for each of 7 composite resin restorative materials. All specimens were polished with a series of aluminum oxide polishing discs (Sof-Lex. The prepared specimens of each composite resin were randomly divided into 3 groups of 10 specimens each, for control (Group-C and two air-powder applications (Group-CP: Cavitron Prophy-Jet; Group-PS: Sirona ProSmile prophylaxis powder. A standard air-polishing unit (ProSmile Handly was used. All specimens were air-powdered for 10 s at 4-bar pressure. The distance of the spray nosel from the specimens was approximately 10 mm and angulation of the nosel was 90°. Specimens were stored in 100 mL of coffee (Nescafe Classic for 24 h at 37°C. Color measurement of all specimens was recorded before and after exposure to staining agent with a colorimeter (Minolta CR-300. Color differences (∆E* between the 2 color measurements (baseline and after 24 h storage were calculated. The data were analyzed with a 2-way ANOVA test, and mean values were compared by the Tukey HSD test (p.05 and these groups demonstrated the highest ∆E* values. For Filtek Silorane and IntenS, the highest ∆E* values were observed in Group-PS. The lowest ∆E* values for all composite resin groups were observed in Group-C. When comparing the 7 composite resin restorative materials, Aelite Aesthetic Enemal demonstrated significantly less ∆E* values than the other composite resins tested. The highest ∆E* values were observed in Quixfil. CONCLUSION: Except for Quixfil, all control groups of composite resins that were polished Sof-Lex exhibited clinically acceptable ∆E values (<3.7. Air-polishing applications increased the color change for all composite resin restorative materials

  5. Conduction quantization in monolayer MoS2

    Science.gov (United States)

    Li, T. S.

    2016-10-01

    We study the ballistic conduction of a monolayer MoS2 subject to a spatially modulated magnetic field by using the Landauer-Buttiker formalism. The band structure depends sensitively on the field strength, and its change has profound influence on the electron conduction. The conductance is found to demonstrate multi-step behavior due to the discrete number of conduction channels. The sharp peak and rectangular structures of the conductance are stretched out as temperature increases, due to the thermal broadening of the derivative of the Fermi-Dirac distribution function. Finally, quantum behavior in the conductance of MoS2 can be observed at temperatures below 10 K.

  6. Increasing sensitivity of MOS dosemeters in cascade connection

    International Nuclear Information System (INIS)

    Vychytil, F.; Cechak, T.; Gerndt, J.; Petr, I.

    1978-01-01

    The possibilities of increasing the sensitivity of MOS transistors in their cascade connection were studied theoretically and experimentally. The measurements confirmed the presumption that the instability of cascade-connected MOS transistors increased with the square of the number of transistors in the system. This allows systems to be formed with different sensitivity to ionizing radiation by encasing 10 to 10 4 transistors connected in cascade, which is technologically feasible. The procedure is also acceptable from the point of view of cost. (Z.M.)

  7. Online MOS Capacitor Characterization in LabVIEW Environment

    Directory of Open Access Journals (Sweden)

    Chinmay K Maiti

    2009-08-01

    Full Text Available We present an automated evaluation procedure to characterize MOS capacitors involving high-k gate dielectrics. Suitability of LabVIEW environment for online web-based semiconductor device characterization is demonstrated. Developed algorithms have been successfully applied to automate the MOS capacitor measurements for Capacitance-Voltage, Conductance-Voltage and Current-Voltage characteristics. Implementation of the algorithm for use as a remote internet-based characterization tool where the client and server communicate with each other via web services is also shown.

  8. Three-dimensional vertical Si nanowire MOS capacitor model structure for the study of electrical versus geometrical Si nanowire characteristics

    Science.gov (United States)

    Hourdakis, E.; Casanova, A.; Larrieu, G.; Nassiopoulou, A. G.

    2018-05-01

    Three-dimensional (3D) Si surface nanostructuring is interesting towards increasing the capacitance density of a metal-oxidesemiconductor (MOS) capacitor, while keeping reduced footprint for miniaturization. Si nanowires (SiNWs) can be used in this respect. With the aim of understanding the electrical versus geometrical characteristics of such capacitors, we fabricated and studied a MOS capacitor with highly ordered arrays of vertical Si nanowires of different lengths and thermal silicon oxide dielectric, in comparison to similar flat MOS capacitors. The high homogeneity and ordering of the SiNWs allowed the determination of the single SiNW capacitance and intrinsic series resistance, as well as other electrical characteristics (density of interface states, flat-band voltage and leakage current) in relation to the geometrical characteristics of the SiNWs. The SiNW capacitors demonstrated increased capacitance density compared to the flat case, while maintaining a cutoff frequency above 1 MHz, much higher than in other reports in the literature. Finally, our model system has been shown to constitute an excellent platform for the study of SiNW capacitors with either grown or deposited dielectrics, as for example high-k dielectrics for further increasing the capacitance density. This will be the subject of future work.

  9. Colorimetric assay of copper ions based on the inhibition of peroxidase-like activity of MoS2 nanosheets

    Science.gov (United States)

    Chen, Huan; Li, Zhihong; Liu, Xueting; Zhong, Jianhai; Lin, Tianran; Guo, Liangqia; Fu, Fengfu

    2017-10-01

    The peroxidase-like catalytic activity of MoS2 nanomaterials has been utilized for colorimetric bioassays and medical diagnostics. However, the application of peroxidase-like catalytic activity of MoS2 nanomaterials in environmental analysis was seldom explored. Herein, copper ions were found to inhibit the peroxidase-like catalytic activity of MoS2 nanosheets, which can catalyze the oxidation of 3, 3‧, 5, 5‧-tetramethylbenzidine by H2O2 to produce a colorimetric product. Based on this finding, a simple sensitive colorimetric method for the detection of copper ions was developed. In the presence of copper ions, the absorbance and color of the solution decreased with the increasing concentration of copper ions. The color of the solution can be used to semi-quantitative on-site assay of copper ions by naked eyes. A linear relationship between the absorbance and the concentration of copper ions was observed in the range of 0.4-4.0 μmol L- 1 with a detection limit of 92 nmol L- 1, which was much lower than the maximum contaminant level of copper in drinking water legislated by the Environmental Protection Agency of USA and the World Health Organization. The method was applied to detect copper ions in environmental water samples with satisfactory results.

  10. Technical report for generic site add-on facility for plutonium polishing

    International Nuclear Information System (INIS)

    1998-06-01

    The purpose of this report is to provide environmental data and reference process information associated with incorporating plutonium polishing steps (dissolution, impurity removal, and conversion to oxide powder) into the genetic-site Mixed-Oxide Fuel Fabrication Facility (MOXFF). The incorporation of the plutonium polishing steps will enable the removal of undesirable impurities, such as gallium and americium, known to be associated with the plutonium. Moreover, unanticipated impurities can be removed, including those that may be contained in (1) poorly characterized feed materials, (2) corrosion products added from processing equipment, and (3) miscellaneous materials contained in scrap recycle streams. These impurities will be removed to the extent necessary to meet plutonium product purity specifications for MOX fuels. Incorporation of the plutonium polishing steps will mean that the Pit Disassembly and Conversion Facility (PDCF) will need to produce a plutonium product that can be dissolved at the MOXFF in nitric acid at a suitable rate (sufficient to meet overall production requirements) with the minimal usage of hydrofluoric acid, and its complexing agent, aluminum nitrate. This function will require that if the PDCF product is plutonium oxide powder, that powder must be produced, stored, and shipped without exceeding a temperature of 600 C

  11. Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

    Science.gov (United States)

    Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

    2017-07-01

    Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

  12. STUDY OF POLISHING AISI 316L WITH STRUCTURED ABRASIVE

    Directory of Open Access Journals (Sweden)

    François GOOSSENS

    2015-05-01

    Full Text Available Finishing process like polishing is usually used to obtain high quality mechanical surface characteristics such as texture and roughness. These operations are mainly handmade and need highly trained operators thus limiting their repeatability and profitability. To optimize the industrialization of the polishing process, it is therefore necessary to modelize the process to built efficient parameter database. The aim of this study is to characterise the polishing of 316L stainless steel with structured abrasive belts. The geometric data of the belts are given, and we then propose a model to determine material removal. An experimental test bench is set up to test this model and characterise the polishing process in terms of forces. It produces samples for different polishing conditions. The different polished surfaces are then analyzed thanks to the roughness and the wettability. Using experimental designs, we are able to validate the proposed model and identify the parameters that influence a polishing operation.

  13. Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qian [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Cheng, Xinhong, E-mail: xh_cheng@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Zheng, Li, E-mail: zhengli@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Ye, Peiyi; Li, Menglu [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China)

    2017-07-15

    Highlights: • The 4H-SiC MOS capacitor with an untra-thin LaSiO{sub x} passivation layer and Al{sub 2}O{sub 3} gate dielectric was fabricated. • The detrimental SiO{sub x} interfacial layer could be effectively restrained by the LaSiO{sub x} passivation layer. • The passivation mechanism of LaSiO{sub x} was analyzed by HRTEM, XPS and electrical measurements. • The 4H-SiC MOS capacitor with a LaSiO{sub x} passivation layer shows excellent device characteristics. • This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications. - Abstract: The detrimental sub-oxide (SiO{sub x}) interfacial layer formed during the 4H-SiC metal-oxide-semiconductor (MOS) capacitor fabrication will drastically damage its device performance. In this work, an ultrathin lanthanum silicate (LaSiO{sub x}) passivation layer was introduced to enhance the interfacial and electrical characteristics of 4H-SiC MOS capacitor with Al{sub 2}O{sub 3} gate dielectric. The interfacial LaSiO{sub x} formation was investigated by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The 4H-SiC MOS capacitor with ultrathin LaSiO{sub x} passivation interlayer shows excellent interfacial and electrical characteristics, including lower leakage current density, higher dielectric breakdown electric field, smaller C–V hysteresis, and lower interface states density and border traps density. The involved mechanism implies that the LaSiO{sub x} passivation interlayer can effectively restrain SiO{sub x} formation and improve the Al{sub 2}O{sub 3}/4H-SiC interface quality. This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications.

  14. Emissions from the Polish power industry

    International Nuclear Information System (INIS)

    Uliasz-Bochenczyk, Alicja; Mokrzycki, Eugeniusz

    2007-01-01

    Poland is a country where power and heat energy production is based on conventional fuel combustion, above all hard coal and lignite. In power plants and combined heat and power plants, fossil fuel combustion results in emitting to the atmosphere first of all SO 2 , NO x , CO, particulate matter, greenhouse gases for instance N 2 O and CO 2 . For many years the Polish power industry has tried to reduce the emission of air contaminants to the atmosphere. The reduction is feasible on account of various methods of emission reduction, which have been advanced and applied for many years. The paper presents conventional fuels used in the Polish professional power industry, as well as the principal emission types occurring there for the last 10 years and the undertaken reduction measures

  15. Chemical polishing of epitoxial silicon wafer

    International Nuclear Information System (INIS)

    Osada, Shohei

    1978-01-01

    SSD telescopes are used for the determination of the kind and energy of charged particles produced by nuclear reactions, and are the equipments combining ΔE counters and E counters. The ΔE counter is a thin SSD which is required to be thin and homogeneous enough to get the high resolution of measurement. The SSDs for ΔE counters have so far been obtained by polishing silicon plates mechanically and chemically or by applying electrolytic polishing method on epitaxial silicon wafers, but it was very hard to obtain them. The creative etching equipment and technique developed this time make it possible to obtain thin SSDs for ΔE counters. The outline of the etching equipment and its technique are described in the report. The etching technique applied for the silicon films for ΔE counters with thickness of about 10 μm was able to be experimentally established in this study. (Kobatake, H.)

  16. Hydrophobic Ice Confined between Graphene and MoS2

    NARCIS (Netherlands)

    Bampoulis, Pantelis; Teernstra, V.J.; Lohse, Detlef; Zandvliet, Henricus J.W.; Poelsema, Bene

    2016-01-01

    The structure and nature of water confined between hydrophobic molybdenum disulfide (MoS2) and graphene (Gr) are investigated at room temperature by means of atomic force microscopy. We find the formation of two-dimensional (2D) crystalline ice layers. In contrast to the hexagonal ice “bilayers” of

  17. Effects of radiation on MOS structures and silicon devices

    International Nuclear Information System (INIS)

    Braeunig, D.; Fahrner, W.

    1983-02-01

    A comprehensive view of radiation effects on MOS structures and silicon devices is given. In the introduction, the interaction of radiation with semiconductor material is presented. In the next section, the electrical degradation of semiconductor devices due to this interaction is discussed. The commonly used hardening techniques are shown. The last section deals with testing of radiation hardness of devices. (orig.) [de

  18. MOS BASED FORECAST OF 6-HOURLY AREA PRECIPITATION

    Czech Academy of Sciences Publication Activity Database

    Sokol, Zbyněk

    2006-01-01

    Roč. 50, č. 1 (2006), s. 105-120 ISSN 0039-3169 R&D Projects: GA AV ČR IBS3042101 Institutional research plan: CEZ:AV0Z30420517 Keywords : precipitation forecast * regression * statistical postprocessing * MOS Subject RIV: DG - Athmosphere Sciences, Meteorology Impact factor: 0.603, year: 2006

  19. Magnetoresistance in molybdenite (MoS2) crystals

    International Nuclear Information System (INIS)

    Chakraborty, B.R.; Dutta, A.K.

    1975-01-01

    The principal magnetoresistance ratios of molybdenite (MoS 2 ), the naturally occurring semiconducting crystal, have been investigated at magnetic fields ranging from 4.5 KOe and within the temperature range 300 0 K to 700 0 K. Unlike some previous observations, magnetoresistance has been found to be negative. (author)

  20. Influence of halo doping profiles on MOS transistor mismatch

    NARCIS (Netherlands)

    Andricciola, P.; Tuinhout, H.

    2009-01-01

    Halo implants are used in modern CMOS technology to reduce the short channel effect. However, the lateral non-uniformity of the channel doping has been proven to degenerate the mismatch performance. With this paper we want to discuss the influence of the halo profile on MOS transistor mismatch. The

  1. Observation of abnormal mobility enhancement in multilayer MoS2 transistor by synergy of ultraviolet illumination and ozone plasma treatment

    Science.gov (United States)

    Guo, Junjie; Yang, Bingchu; Zheng, Zhouming; Jiang, Jie

    2017-03-01

    Mobility engineering through physical or chemical process is a fruitful approach for the atomically-layered two-dimensional electronic applications. Unfortunately, the usual process with either illumination or oxygen treatment would greatly deteriorate the mobility in two-dimensional MoS2 field-effect transistor (FET). Here, in this work, we report that the mobility can be abnormally enhanced to an order of magnitude by the synergy of ultraviolet illumination (UV) and ozone plasma treatment in multilayer MoS2 FET. This abnormal mobility enhancement is attributed to the trap passivation due to the photo-generated excess carriers during UV/ozone plasma treatment. An energy band model based on Schottky barrier modulation is proposed to understand the underlying mechanism. Raman spectra results indicate that the oxygen ions are incorporated into the surface of MoS2 (some of them are in the form of ultra-thin Mo-oxide) and can further confirm this proposed mechanism. Our results can thus provide a simple approach for mobility engineering in MoS2-based FET and can be easily expanded to other 2D electronic devices, which represents a significant step toward applications of 2D layered materials in advanced cost-effective electronics.

  2. Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric

    Science.gov (United States)

    Hu, Yaoqiao; Jiang, Huaxing; Lau, Kei May; Li, Qiang

    2018-04-01

    For the first time, ZrO2 dielectric deposition on pristine monolayer MoS2 by atomic layer deposition (ALD) is demonstrated and ZrO2/MoS2 top-gate MOSFETs have been fabricated. ALD ZrO2 overcoat, like other high-k oxides such as HfO2 and Al2O3, was shown to enhance the MoS2 channel mobility. As a result, an on/off current ratio of over 107, a subthreshold slope of 276 mV dec-1, and a field-effect electron mobility of 12.1 cm2 V-1 s-1 have been achieved. The maximum drain current of the MOSFET with a top-gate length of 4 μm and a source/drain spacing of 9 μm is measured to be 1.4 μA μm-1 at V DS = 5 V. The gate leakage current is below 10-2 A cm-2 under a gate bias of 10 V. A high dielectric breakdown field of 4.9 MV cm-1 is obtained. Gate hysteresis and frequency-dependent capacitance-voltage measurements were also performed to characterize the ZrO2/MoS2 interface quality, which yielded an interface state density of ˜3 × 1012 cm-2 eV-1.

  3. Disposable MoS2-Arrayed MALDI MS Chip for High-Throughput and Rapid Quantification of Sulfonamides in Multiple Real Samples.

    Science.gov (United States)

    Zhao, Yaju; Tang, Minmin; Liao, Qiaobo; Li, Zhoumin; Li, Hui; Xi, Kai; Tan, Li; Zhang, Mei; Xu, Danke; Chen, Hong-Yuan

    2018-04-27

    In this work, we demonstrate, for the first time, the development of a disposable MoS 2 -arrayed matrix-assisted laser desorption/ionization mass spectrometry (MALDI MS) chip combined with an immunoaffinity enrichment method for high-throughput, rapid, and simultaneous quantitation of multiple sulfonamides (SAs). The disposable MALDI MS chip was designed and fabricated by MoS 2 array formation on a commercial indium tin oxide (ITO) glass slide. A series of SAs were analyzed, and clear deprotonated signals were obtained in negative-ion mode. Compared with MoS 2 -arrayed commercial steel plate, the prepared MALDI MS chip exhibited comparable LDI efficiency, providing a good alternative and disposable substrate for MALDI MS analysis. Furthermore, internal standard (IS) was previously deposited onto the MoS 2 array to simplify the experimental process for MALDI MS quantitation. 96 sample spots could be analyzed within 10 min in one single chip to perform quantitative analysis, recovery studies, and real foodstuff detection. Upon targeted extraction and enrichment by antibody conjugated magnetic beads, five SAs were quantitatively determined by the IS-first method with the linear range of 0.5-10 ng/mL ( R 2 > 0.990). Good recoveries and repeatability were obtained for spiked pork, egg, and milk samples. SAs in several real foodstuffs were successfully identified and quantified. The developed method may provide a promising tool for the routine analysis of antibiotic residues in real samples.

  4. Polish normalization of the Body Esteem Scale

    Directory of Open Access Journals (Sweden)

    Małgorzata Lipowska

    2014-02-01

    Full Text Available Background Physical attractiveness plays an important part in one’s social functioning. The interest in one’s own appearance have been documented as widespread among the female population, but over the recent years it is more and more often emphasized that concentrating on body appearance concerns men as well. Franzoi and Shields (1984 created the Body Esteem Scale which allows to qualify the subject’s attitude towards his or her own body. The aim of the study was to create a Polish version of the Body Esteem Scale along with the norms for age and sex clusters. Participants and procedure The normalization sample consisted of 4298 participants: 1865 women aged 16 to 80 (M = 29.92; SD = 12.85 and 2433 men aged 16 to 78 (M = 28.74; SD = 11.50. Education levels among the participants were also controlled for. In order to create a Polish version of the Body Esteem Scale, translation was adopted as the adaptation strategy. Like the original one, the Polish scale comprises 35 items grouped into three gender specific subscales. The subscales for women include Sexual Attractiveness, Weight Concern, and Physical Condition, whereas the body esteem of is examined with regards to Physical Attractiveness, Upper Body Strength, and Physical Condition. Results Reliability of subscales was high both for females (Cronbach’s alpha from 0.80 to 0.89 and males (Cronbach’s alpha from 0.85 to 0.88. The given coefficients of reliability cover the original division into subscales adopted by the authors of BES. Conclusions We confirmed high reliability of the Polish version of the Body Esteem Scale, thus we recommend it as a diagnostic tool. Created norms allowed to refer results obtained in the course of research carried out on people with various disorders (e.g. eating disorders or body dysmorphic disorder with population data for corresponding age brackets.

  5. Tailored MoS2 nanorods: a simple microwave assisted synthesis

    Science.gov (United States)

    Reshmi, S.; Akshaya, M. V.; Satpati, Biswarup; Roy, Anupam; Basu, Palash Kumar; Bhattacharjee, K.

    2017-11-01

    We report here the synthesis of MoS2 nanostructures by a simple liquid phase exfoliation of MoS2 powder in organic solvents followed by microwave treatment. The probe sonication and the microwave treatment play an important role in rolling and curling of the MoS2 nanosheets to give rise to MoS2 spheres and rod/tube like-structures with diameter approximately 150-200 nm. The MoS2 nanorods formed in this fashion are hollow inside with a wall thickness of 15-20 nm and the length of the nanorods is found in the order of several micrometers. Synthesis of such tailored MoS2 nanorods by liquid phase exfoliation is not yet reported. Our observations suggest the 2H phase of bulk MoS2 remains preserved in the nanostructures with high crystalline quality.

  6. Robotic Automation in Computer Controlled Polishing

    Science.gov (United States)

    Walker, D. D.; Yu, G.; Bibby, M.; Dunn, C.; Li, H.; Wu, Y.; Zheng, X.; Zhang, P.

    2016-02-01

    We first present a Case Study - the manufacture of 1.4 m prototype mirror-segments for the European Extremely Large Telescope, undertaken by the National Facility for Ultra Precision Surfaces, at the OpTIC facility operated by Glyndwr University. Scale-up to serial-manufacture demands delivery of a 1.4 m off-axis aspheric hexagonal segment with surface precision robots and computer numerically controlled ('CNC') polishing machines for optical fabrication. The objective was not to assess which is superior. Rather, it was to understand for the first time their complementary properties, leading us to operate them together as a unit, integrated in hardware and software. Three key areas are reported. First is the novel use of robots to automate currently-manual operations on CNC polishing machines, to improve work-throughput, mitigate risk of damage to parts, and reduce dependence on highly-skilled staff. Second is the use of robots to pre-process surfaces prior to CNC polishing, to reduce total process time. The third draws the threads together, describing our vision of the automated manufacturing cell, where the operator interacts at cell rather than machine level. This promises to deliver a step-change in end-to-end manufacturing times and costs, compared with either platform used on its own or, indeed, the state-of-the-art used elsewhere.

  7. ROUGHNESS ANALYSIS OF VARIOUSLY POLISHED NIOBIUM SURFACES

    Energy Technology Data Exchange (ETDEWEB)

    Ribeill, G.; Reece, C.

    2008-01-01

    Niobium superconducting radio frequency (SRF) cavities have gained widespread use in accelerator systems. It has been shown that surface roughness is a determining factor in the cavities’ effi ciency and maximum accelerating potential achievable through this technology. Irregularities in the surface can lead to spot heating, undesirable local electrical fi eld enhancement and electron multipacting. Surface quality is typically ensured through the use of acid etching in a Buffered Chemical Polish (BCP) bath and electropolishing (EP). In this study, the effects of these techniques on surface morphology have been investigated in depth. The surface of niobium samples polished using different combinations of these techniques has been characterized through atomic force microscopy (AFM) and stylus profi lometry across a range of length scales. The surface morphology was analyzed using spectral techniques to determine roughness and characteristic dimensions. Experimentation has shown that this method is a valuable tool that provides quantitative information about surface roughness at different length scales. It has demonstrated that light BCP pretreatment and lower electrolyte temperature favors a smoother electropolish. These results will allow for the design of a superior polishing process for niobium SRF cavities and therefore increased accelerator operating effi ciency and power.

  8. The correlation between electroluminescence properties and the microstructure of Europium-implanted MOS light emitting diodes

    International Nuclear Information System (INIS)

    Rebohle, L.; Lehmann, J.; Kanjilal, A.; Prucnal, S.; Nazarov, A.; Tyagulskii, I.; Skorupa, W.; Helm, M.

    2009-01-01

    In this work we investigated the correlation between the EL, the electrical properties and the microstructure of Eu-implanted MOS light emitting devices. The EL spectrum shows a red EL line centered at 618 nm which is usually assigned to Eu 3+ and a broad blue-green EL band attributed to Eu 2+ . It was found that the red EL is favored by low injection currents, low Eu concentrations, lower anneal temperatures and shorter anneal times, especially for flash lamp annealing. These properties are correlated with microstructural changes triggered by ion implantation and annealing, especially with the formation and ripening of Eu or Eu oxide clusters which strongly quench the red EL. Finally, the influence of Eu agglomerations at the injecting interface on the electrical properties of the light emitter is discussed.

  9. Modifications of Fowler-Nordheim injection characteristics in γ irradiated MOS devices

    International Nuclear Information System (INIS)

    Scarpa, A.; Paccagnella, A.; Montera, F.; Candelori, A.; Ghidini, G.; Fuochi, P.G.

    1998-01-01

    In this work the authors have investigated how gamma irradiation affects the tunneling conduction mechanism of a 20 nm thick oxide in MOS capacitors. The radiation induced positive charge is rapidly compensated by the injected electrons, and does not impact the gate current under positive injection after the first current-voltage measurement. Only a transient stress induced leakage current at low gate bias is observed. Instead, a radiation induced negative charge has been observed near the polysilicon gate, which enhances the gate voltage needed for Fowler-Nordheim conduction at negative gate bias. No time decay of this charge has been observed. Such charges slightly modify the trapping kinetics of negative charge during subsequent electrical stresses performed at constant current condition

  10. Analysis of gate underlap channel double gate MOS transistor for electrical detection of bio-molecules

    Science.gov (United States)

    Ajay; Narang, Rakhi; Saxena, Manoj; Gupta, Mridula

    2015-12-01

    In this paper, an analytical model for gate drain underlap channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG-MOSFET) for label free electrical detection of biomolecules has been proposed. The conformal mapping technique has been used to derive the expressions for surface potential, lateral electric field, energy bands (i.e. conduction and valence band) and threshold voltage (Vth). Subsequently a full drain current model to analyze the sensitivity of the biosensor has been developed. The shift in the threshold voltage and drain current (after the biomolecules interaction with the gate underlap channel region of the MOS transistor) has been used as a sensing metric. All the characteristic trends have been verified through ATLAS (SILVACO) device simulation results.

  11. Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers

    Directory of Open Access Journals (Sweden)

    Chien-Wei Lee

    2013-10-01

    Full Text Available We derive a statistical physics model of two-dimensional electron gas (2DEG and propose an accurate approximation method for calculating the quantum-mechanical effects of metal-oxide-semiconductor (MOS structure in accumulation and strong inversion regions. We use an exponential surface potential approximation in solving the quantization energy levels and derive the function of density of states in 2D to 3D transition region by applying uncertainty principle and Schrödinger equation in k-space. The simulation results show that our approximation method and theory of density of states solve the two major problems of previous researches: the non-negligible error caused by the linear potential approximation and the inconsistency of density of states and carrier distribution in 2D to 3D transition region.

  12. The Role of Electron Transport and Trapping in MOS Total-Dose Modeling

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

    1999-01-01

    Radiation-induced hole and electron transport and trapping are fundamental to MOS total-dose models. Here we separate the effects of electron-hole annihilation and electron trapping on the neutralization of radiation-induced charge during switched-bias irradiation for hard and soft oxides, via combined thermally stimulated current (TSC) and capacitance-voltage measurements. We also show that present total-dose models cannot account for the thermal stability of deeply trapped electrons near the Si/SiO 2 interface, or the inability of electrons in deep or shallow traps to contribute to TSC at positive bias following (1) room-temperature, (2) high-temperature, or (3) switched-bias irradiation. These results require revisions of modeling parameters and boundary conditions for hole and electron transport in SiO 2 . The nature of deep and shallow electron traps in the near-interfacial SiO 2 is discussed

  13. MOS memory structures by very-low-energy-implanted Si in thin SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Dimitrakis, P.; Kapetanakis, E.; Normand, P.; Skarlatos, D.; Tsoukalas, D.; Beltsios, K.; Claverie, A.; Benassayag, G.; Bonafos, C.; Chassaing, D.; Carrada, M.; Soncini, V

    2003-08-15

    The electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals obtained by low-energy ion beam implantation and subsequent annealing have been investigated through capacitance and current-voltage measurements of MOS capacitors. The effects of the implantation energy (range: 0.65-2 keV), annealing temperature (950-1050 deg. C) and injection oxide characteristics on charge injection and storage are reported. It is shown that the implantation energy allows for a fine control of the memory window characteristics, and various device options are possible including memory operation with charge injection at low gate voltages.

  14. Facile Quantification and Identification Techniques for Reducing Gases over a Wide Concentration Range Using a MOS Sensor in Temperature-Cycled Operation

    OpenAIRE

    Caroline Schultealbert; Tobias Baur; Andreas Schütze; Tilman Sauerwald

    2018-01-01

    Dedicated methods for quantification and identification of reducing gases based on model-based temperature-cycled operation (TCO) using a single commercial MOS gas sensor are presented. During high temperature phases the sensor surface is highly oxidized, yielding a significant sensitivity increase after switching to lower temperatures (differential surface reduction, DSR). For low concentrations, the slope of the logarithmic conductance during this low-temperature phase is evaluated and can ...

  15. Effects of polishing procedures on color stability of composite resins

    Directory of Open Access Journals (Sweden)

    Ahmet Umut Güler

    2009-04-01

    Full Text Available The purpose of this study was to investigate the effect of different polishing methods on color stability of posterior, universal and nanohybrid composite resin restorative materials upon exposure to a staining agent. Twenty-five specimens were prepared for each of 5 different composite resins (Filtek Z250, Filtek P60, Quadrant LC, Grandio and Filtek Supreme. Specimens were divided into 5 groups and different polishing procedures, including polishing discs (Pd, polishing discs then diamond polishing paste (PdP, polishing discs then a liquid polishing system (Biscover (PdB, and combinations of these (PdPB were used. Unpolished specimens served as the control (C. The specimens were stored for 48 h in a coffee solution. The color of all specimens was measured before and after exposure with a colorimeter, and total color change (DE* were calculated. The data were analyzed with a two-way ANOVA and the means were compared by Tukey HSD test (a=0.05. The lowest color difference was observed in the groups PdP and C, while the highest color difference was observed in PdPB, and PdB. When comparing the five different restorative materials, no significant difference was observed between FiltekP60 and FiltekZ250, and these materials demonstrated significantly less color change than Quadrant LC and the nanohybrid materials (Grandio, Filtek Supreme. The posterior (Filtek P60 and universal (Filtek Z250 composite resin restorative materials, which do not contain tetraethyleneglycol dimethacrylate (TEGDMA, were found to be less stainable than the nanohybrid (Grandio, Filtek Supreme and universal (Quadrant LC composite resins, which contain TEGDMA. The use of diamond polishing paste after polishing with polishing discs significantly decreased staining when compared to the groups that used polishing discs alone, for all restorative materials tested. The highest color change values were obtained for the specimens that were polished with the Biscover liquid polish

  16. Oxidation study of the synthetic sulfides molybdenite (MoS{sub 2}) and covellite (CuS) by acidithiobacillus ferrooxidants using respirometric experiments; Estudo da oxidacao dos sulfetos sinteticos molibdenita (MoS2) e covelita (CuS) por Acidithiobacillus ferrooxidans via respirometria celular

    Energy Technology Data Exchange (ETDEWEB)

    Francisco Junior, Wilmo E. [Universidade Federal de Rondonia (UFRO), Porto Velho, RO (Brazil). Dept. de Quimica; Universidade Estadual Paulista (UNESP), Araraquara, SP (Brazil). Inst. de Quimica. Dept. de Bioquimica e Tecnologia Quimica], e-mail: wilmojr@bol.com.br; Bevilaqua, Denise; Garcia Junior, Oswaldo [Universidade Estadual Paulista (UNESP), Araraquara, SP (Brazil). Inst. de Quimica. Dept. de Bioquimica e Tecnologia Quimica

    2009-07-01

    This paper analyses the oxidation of covellite and molybdenite by Acidithiobacillus ferrooxidans strain LR using respirometric experiments. The results showed that both sulfides were oxidized by A. ferrooxidans, however, the covellite oxidation was much higher than molybdenite. Regarding the kinetic oxidation, the findings revealed that just molybdenite oxidation followed the classical Michaelis-Menten kinetic. It is probably associated with the pathway which these sulfides react to chemistry-bacterial attack, what is influenced by its electronic structures. Besides, experiments conducted in the presence of Fe{sup 3+} did not indicate alterations in molybdenite oxidation. Thus, ferric ions seem not to be essential to the sulfide oxidations. (author)

  17. Evaluation of the effect of different methods of microabrasion and polishing on surface roughness of dental enamel.

    Science.gov (United States)

    Bertoldo, Carlos; Lima, Debora; Fragoso, Larissa; Ambrosano, Glaucia; Aguiar, Flavio; Lovadino, Jose

    2014-01-01

    The microabrasion technique of enamel consists of selectively abrading the discolored areas or causing superficial structural changes in a selective way. In microabrasion technique, abrasive products associated with acids are used, and the evaluation of enamel roughness after this treatment, as well as surface polishing, is necessary. This in-vitro study evaluated the enamel roughness after microabrasion, followed by different polishing techniques. Roughness analyses were performed before microabrasion (L1), after microabrasion (L2), and after polishing (L3).Thus, 60 bovine incisive teeth divided into two groups were selected (n=30): G1- 37% phosphoric acid (37%) (Dentsply) and pumice; G2- hydrochloric acid (6.6%) associated with silicon carbide (Opalustre - Ultradent). Thereafter, the groups were divided into three sub-groups (n=10), according to the system of polishing: A - Fine and superfine granulation aluminum oxide discs (SofLex 3M); B - Diamond Paste (FGM) associated with felt discs (FGM); C - Silicone tips (Enhance - Dentsply). A PROC MIXED procedure was applied after data exploratory analysis, as well as the Tukey-Kramer test (5%). No statistical differences were found between G1 and G2 groups. L2 differed statistically from L1 and showed superior amounts of roughness. Differences in the amounts of post-polishing roughness for specific groups (1A, 2B, and 1C) arose, which demonstrated less roughness in L3 and differed statistically from L2 in the polishing system. All products increased enamel roughness, and the effectiveness of the polishing systems was dependent upon the abrasive used.

  18. Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing of GaN

    Science.gov (United States)

    Wang, Jie; Wang, Tongqing; Pan, Guoshun; Lu, Xinchun

    2016-08-01

    Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing (CMP) of GaN were deeply investigated in this paper. Working as an ideal homogeneous substrate material in LED industry, GaN ought to be equipped with a smooth and flat surface. Taking the strong chemical stability of GaN into account, photocatalytic oxidation technology was adopted in GaN CMP process to realize efficient removal. It was found that, because of the improved reaction rate of photocatalytic oxidation, GaN material removal rate (MRR) increases by a certain extent with catalyst concentration increasing. Cross single line analysis on the surface after polishing by Phase Shift MicroXAM-3D was carried out to prove the better removal effect with higher catalyst concentration. Ultraviolet intensity field in H2O2-SiO2-based polishing system was established and simulated, revealing the variation trend of ultraviolet intensity around the outlet of the slurry. It could be concluded that, owing to the higher planarization efficiency and lower energy damage, the UV lamp of 125 W is the most appropriate lamp in this system. Based on the analysis, defects removal model of this work was proposed to describe the effects of higher catalyst concentration and higher power of UV lamp.

  19. Radiation effects in LDD MOS devices

    International Nuclear Information System (INIS)

    Woodruff, R.L.; Adams, J.R.

    1987-01-01

    The purpose of this work is to investigate the response of lightly doped drain (LDD) n-channel transistors to ionizing radiation. Transistors were fabricated with conventional (non-LDD) and lightly doped drain (LDD) structures using both standard (non-hardened) and radiation hardened gate oxides. Characterization of the transistors began with a correlation of the total-dose effects due to 10 keV x-rays with Co-60 gamma rays. The authors find that for the gate oxides and transistor structures investigated in this work, 10 keV x-rays produce more fixed-charge guild-up in the gate oxide, and more interface charge than do Co-60 gamma rays. They determined that the radiation response of LDD transistors is similar to that of conventional (non-LDD) transistors. In addition, both standard and radiation-hardened transistors subjected to hot carrier stress before irradiation show a similar radiation response. After exposure to 1.0 x 10 6 rads(Si), non-hardened transistors show increased susceptibility to hot-carrier graduation, while the radiation-hardened transistors exhibit similar hot-carrier degradation to non-irradiated devices. The authors have demonstrated a fully-integrated radiation hardened process tht is solid to 1.0 x 10 6 rads(Si), and shows promise for achieving 1.0 x 10 7 rad(Si) total-dose capability

  20. Tribological approach to study polishing of road surface under traffic

    OpenAIRE

    KANE, Malal; DO, Minh Tan

    2007-01-01

    The polishing phenomenon of road pavements under the vehicle traffic constitutes the main mechanism inherent to the loss of skid resistance over time. A better understanding of this phenomenon would allow an improvement of road safety. This study comprises a review of laboratory test and a model simulating the polishing of road surfaces. The laboratory test uses a polishing machine so called 'Wehner-Schulze' which can reproduce the evolution of the road texture from specimens taken directly f...

  1. Polish Phoneme Statistics Obtained On Large Set Of Written Texts

    Directory of Open Access Journals (Sweden)

    Bartosz Ziółko

    2009-01-01

    Full Text Available The phonetical statistics were collected from several Polish corpora. The paper is a summaryof the data which are phoneme n-grams and some phenomena in the statistics. Triphonestatistics apply context-dependent speech units which have an important role in speech recognitionsystems and were never calculated for a large set of Polish written texts. The standardphonetic alphabet for Polish, SAMPA, and methods of providing phonetic transcriptions are described.

  2. Polish Qualitative Sociology: The General Features and Development

    OpenAIRE

    Konecki, Krzysztof Tomasz; Kacperczyk, Anna; Marciniak, Łukasz

    2005-01-01

    Forum Qualitative Sozialforschung / Forum: Qualitative Social Research,2005, 6(3) The article explores the development of Polish qualitative sociology in Poland by presenting its main intellectual routes and some of the general features of Polish sociology. Romanticism and inductionmethod are crucial elements for the development of this discipline in Poland and contribute to its. unigueness. The role of Florian Znaniecki in creating the Polish qualitative sociology is also underlined.

  3. High conductivity graphene-like MoS2/polyaniline nanocomposites and its application in supercapacitor

    International Nuclear Information System (INIS)

    Wang, Jin; Wu, Zongchao; Hu, Kunhong; Chen, Xiangying; Yin, Huabing

    2015-01-01

    Highlights: • A facile synthesis method of MoS 2 /PANI intercalated nanocomposites is developed. • There is synergistic effect between PANI and MoS 2 layer in the MoS 2 /PANI composites. • Intercalation is benefit for electrons transportation and conductivity increase. • The well-defined MoS 2 /PANI have good specific capacitances and long cyclic life. - Abstract: High conductivity nanocomposites of molybdenum disulfide (MoS 2 )/polyaniline (PANI) were prepared via direct intercalation of aniline monomer and doped with dodecyl benzene sulfonic acid (DBSA). The intercalated interaction between PANI and MoS 2 improves the conductivity and thermal stability of MoS 2 /PANI nanocomposites with the increasing fraction of MoS 2 . The conductivity and maximum weight loss velocity temperature of PANI/MoS 2 -38 sample are 2.38 S cm −1 and 353 °C, respectively. This architecture is also advantageous for enhancing the capacitance properties and cyclic stabilities of MoS 2 /PANI electrodes. In comparison to the specific capacitance of 131 F/g and 42% retained capacitance over 600 cycles of PANI electrode, the MoS 2 /PANI-38 electrode provides a specific capacitance up to 390 F/g and 86% retained capacitance over 1000 cycles. Thus it provides an improved capacitance method which synergistically combines pseudocapacitance and double-layer capacitance for supercapacitor electrodes

  4. Synthesis of Epitaxial Single-Layer MoS2 on Au(111).

    Science.gov (United States)

    Grønborg, Signe S; Ulstrup, Søren; Bianchi, Marco; Dendzik, Maciej; Sanders, Charlotte E; Lauritsen, Jeppe V; Hofmann, Philip; Miwa, Jill A

    2015-09-08

    We present a method for synthesizing large area epitaxial single-layer MoS2 on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS2 islands to a continuous MoS2 layer. An exceptionally good control over the MoS2 coverage is maintained using an approach based on cycles of Mo evaporation and sulfurization to first nucleate the MoS2 nanoislands and then gradually increase their size. During this growth process the native herringbone reconstruction of Au(111) is lifted as shown by low energy electron diffraction measurements. Within the MoS2 islands, we identify domains rotated by 60° that lead to atomically sharp line defects at domain boundaries. As the MoS2 coverage approaches the limit of a complete single layer, the formation of bilayer MoS2 islands is initiated. Angle-resolved photoemission spectroscopy measurements of both single and bilayer MoS2 samples show a dramatic change in their band structure around the center of the Brillouin zone. Brief exposure to air after removing the MoS2 layer from vacuum is not found to affect its quality.

  5. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    Directory of Open Access Journals (Sweden)

    Wei-Ting eLai

    2016-02-01

    Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

  6. Insights into highly improved solar-driven photocatalytic oxygen evolution over integrated Ag3PO4/MoS2 heterostructures

    Science.gov (United States)

    Cui, Xingkai; Yang, Xiaofei; Xian, Xiaozhai; Tian, Lin; Tang, Hua; Liu, Qinqin

    2018-04-01

    Oxygen evolution has been considered as the rate-determining step in photocatalytic water splitting due to its sluggish four-electron half-reaction rate, the development of oxygen-evolving photocatalysts with well-defined morphologies and superior interfacial contact is highly important for achieving high-performance solar water splitting. Herein, we report the fabrication of Ag3PO4/MoS2 nanocomposites and, for the first time, their use in photocatalytic water splitting into oxygen under LED light illumination. Ag3PO4 nanoparticles were found to be anchored evenly on the surface of MoS2 nanosheets, confirming an efficient hybridization of two semiconductor materials. A maximum oxygen-generating rate of 201.6 mol L-1 g-1 h-1 was determined when 200 mg MoS2 nanosheets were incorporated into Ag3PO4 nanoparticles, which is around 5 times higher than that of bulk Ag3PO4. Obvious enhancements in light-harvesting property, as well as electron-hole separation and charge transportation are revealed by the combination of different characterizations. ESR analysis verified that more active oxygen-containing radicals generate over illuminated Ag3PO4/MoS2 composite photocatalysts rather than irradiated Ag3PO4. The improvement in oxygen evolution performance of Ag3PO4/MoS2 composite photocatalysts is ascribed to wide spectra response in the visible-light region, more efficient charge separation and enhanced oxidation capacity in the valence band (VB). This study provides new insights into the design and development of novel composite photocatalytic materials for solar-to-fuel conversion.

  7. Assessing operability of a novel polisher arrangement using MMS

    International Nuclear Information System (INIS)

    Shor, S.W.W.

    1987-01-01

    A condensate polisher is intended to remove both particulate matter and ionic material from the condensate. Condensate polishers have normally been placed directly in the condensate system downstream of the condensate pumps. This inline location has certain disadvantages. These disadvantages are discussed. Placing the polisher in a sidestream location, where water is removed from the condensate system, pumped through the polisher, and then returned to the condensate system provides a solution to these disadvantages. Several possible types of sidestream installations is described. This has a polisher taking unpolished condensate from one compartment from one compartment of a divided hotwell in a specially modified condenser and returning polished condensate to the other compartment. The polisher is supplied by its own dedicated pumps, which have a head requirement sufficient only to overcome the pressure drop through the polisher circuit at a flow rate of 110% of maximum condensate flow. This concept is very attractive but has not yet been tested even though it is being installed in several new units. A simulation was, therefore, performed using MMS to provide confidence that this particular sidestream polisher arrangement was operationally viable

  8. Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique

    International Nuclear Information System (INIS)

    Lee, Ching-Sung; Liu, Han-Yin; Wu, Ting-Ting; Hsu, Wei-Chou; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min

    2016-01-01

    This work investigates GaN/Al 0.24 Ga 0.76 N/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on a Si substrate with MgO gate dielectric by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. The oxide layer thickness is tuned to be 30 nm with the dielectric constant of 8.8. Electron spectroscopy for chemical analysis (ESCA), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM), transmission electron microscopy (TEM), C–V, low-frequency noise spectra, and pulsed I–V measurements are performed to characterize the interface and oxide quality for the MOS-gate structure. Improved device performances have been successfully achieved for the present MOS-HEMT (Schottky-gate HEMT) design, consisting of a maximum drain-source current density (I DS, max ) of 681 (500) mA/mm at V GS  = 4 (2) V, I DS at V GS  = 0 V (I DSS0 ) of 329 (289) mA/mm, gate-voltage swing (GVS) of 2.2 (1.6) V, two-terminal gate-drain breakdown voltage (BV GD ) of −123 (−104) V, turn-on voltage (V on ) of 1.7 (0.8) V, three-terminal off-state drain-source breakdown voltage (BV DS ) of 119 (96) V, and on/off current ratio (I on /I off ) of 2.5 × 10 8 (1.2 × 10 3 ) at 300 K. Improved high-frequency and power performances are also achieved in the present MOS-HEMT design. (paper)

  9. Chemical-mechanical polishing of metal and dielectric films for microelectronic applications

    Science.gov (United States)

    Hegde, Sharath

    and better post-polish surface roughness values compared to those containing single kind of particles. Several arguments are proposed to explain the enhanced CMP performance with the composite abrasives. The effect of surface charge of the composite abrasive and the hardness of the core particles in the composite abrasives contained in the polishing slurry on polish rates of different films is discussed. Also, as a part of this thesis, several issues related to CMP were addressed. The planarization ability of Cu CMP slurry containing alumina coated silica particles was studied to elucidate the role of pattern geometry in affecting polish rate and also generating pattern dependent defects like dishing and erosion. Additionally, a polishing process was devised which, when viewed with the optical profilometer, eliminated surface defects including shallow and deep scratches and pits already present in a copper film. Also, molybdenum dioxide (MoO2) was evaluated as a potential abrasive for a highly reactive copper CMP slurry with potassium iodate as the oxidizing agent. Finally, the interaction of amino acid additives in ceria slurries with the silicon nitride film during STI CMP is discussed. Directions for future work have been presented at the end of the thesis.

  10. Slower nicotine metabolism among postmenopausal Polish smokers.

    Science.gov (United States)

    Kosmider, Leon; Delijewski, Marcin; Koszowski, Bartosz; Sobczak, Andrzej; Benowitz, Neal L; Goniewicz, Maciej L

    2018-06-01

    A non-invasive phenotypic indicator of the rate of nicotine metabolism is nicotine metabolite ratio (NMR) defined as a ratio of two major metabolites of nicotine - trans-3'-hydroxycotinine/cotinine. The rate of nicotine metabolism has important clinical implications for the likelihood of successful quitting with nicotine replacement therapy (NRT). We conducted a study to measure NMR among Polish smokers. In a cross-sectional study of 180 daily cigarette smokers (42% men; average age 34.6±13.0), we collected spot urine samples and measured trans-3'-hydroxycotinine (3-HC) and cotinine levels with LC-MS/MS method. We calculated NMR (molar ratio) and analyzed variations in NMR among groups of smokers. In the whole study group, an average NMR was 4.8 (IQR 3.4-7.3). The group of women below 51 years had significantly greater NMR compared to the rest of the population (6.4; IQR 4.1-8.8 vs. 4.3; IQR 2.8-6.4). No differences were found among group ages of male smokers. This is a first study to describe variations in nicotine metabolism among Polish smokers. Our findings indicate that young women metabolize nicotine faster than the rest of population. This finding is consistent with the known effects of estrogen to induce CYP2A6 activity. Young women may require higher doses of NRT or non-nicotine medications for most effective smoking cessation treatment. Copyright © 2017 Institute of Pharmacology, Polish Academy of Sciences. Published by Elsevier B.V. All rights reserved.

  11. Plasma electrolytic polishing of metalized carbon fibers

    Directory of Open Access Journals (Sweden)

    Falko Böttger-Hiller

    2016-02-01

    Full Text Available Efficient lightweight structures require intelligent materials that meet versatile functions. Especially, carbon-fiber-reinforced polymers (CFRPs are gaining relevance. Their increasing use aims at reducing energy consumption in many applications. CFRPs are generally very light in weight, while at the same time being extremely stiff and strong (specific strength: CFRPs: 1.3 Nm kg–1, steel: 0.27 Nm kg–1; specific stiffness: CFRPs: 100 Nm kg–1, steel: 25 Nm kg–1. To increase performance and especially functionality of CFRPs, the integration of microelectronic components into CFRP parts is aspired. The functionalization by sensors, actuators and electronics can enable a high lightweight factor and a new level of failure-safety. The integration of microelectronic components for this purpose requires a working procedure to provide electrical contacts for a reliable connection to energy supply and data interfaces. To overcome this challenge, metalized carbon fibers are used. Metalized fibers are, similar to the usual reinforcing fibers, able to be soldered and therefore easy to incorporate into CFRPs. Unfortunately, metalized fibers have to be pre-treated by flux-agents. Until now, there is no flux which is suitable for mass production without destroying the polymer of the CFRP. The process of plasma electrolytic polishing (PeP could be an option, but is so far not available for copper. Thus, in this study, plasma electrolytic polishing is transferred to copper and its alloys. To achieve this, electrolytic parameters as well as the electrical setup are adapted. It can be observed that the gloss and roughness can be adjusted by means of this procedure. Finally, plasma electrolytic polishing is used to treat thin copper layers on carbon fibers.

  12. An Unbiased View of the History of Polish Medical Physics by a Senior Polish Medical Physicist

    International Nuclear Information System (INIS)

    Chomicki, O. A.

    2008-01-01

    Here is a story told by Maria Sklodowska-Curie at the meeting of the International Committee of Intellectual Cooperation in 1921: 'In a free literary competition on the role and importance of elephants the Englishman's story was 'My adventures while shooting elephants in South Africa', the Frenchman was more concerned with 'The sexual and erotic life of elephants', while the Polish approach was invariably 'The elephant versus Poland's national independence', which seemed quite understandable in the light of over 120 years when Poland was partitioned and lost its independence. Since then this saying has become proverbial and came to express the unmistakably Polish tendency to see everything in terms of Polish interests. In my remarks and reminiscences on the history of the Polish Society of Medical Physics you will quickly recognize the same tendency. First, I will, among other things, try to open some old cupboards to 'produce good [things] from the store of good' (Matthew 12:35), especially concerning the first few years of the activity in medical physics in Poland, and second, I will draw some conclusions and/or offer suggestions based on what a senior medical physicist has seen for more than 50 years of his activity in this field. (author)

  13. Terminology extraction from medical texts in Polish.

    Science.gov (United States)

    Marciniak, Małgorzata; Mykowiecka, Agnieszka

    2014-01-01

    Hospital documents contain free text describing the most important facts relating to patients and their illnesses. These documents are written in specific language containing medical terminology related to hospital treatment. Their automatic processing can help in verifying the consistency of hospital documentation and obtaining statistical data. To perform this task we need information on the phrases we are looking for. At the moment, clinical Polish resources are sparse. The existing terminologies, such as Polish Medical Subject Headings (MeSH), do not provide sufficient coverage for clinical tasks. It would be helpful therefore if it were possible to automatically prepare, on the basis of a data sample, an initial set of terms which, after manual verification, could be used for the purpose of information extraction. Using a combination of linguistic and statistical methods for processing over 1200 children hospital discharge records, we obtained a list of single and multiword terms used in hospital discharge documents written in Polish. The phrases are ordered according to their presumed importance in domain texts measured by the frequency of use of a phrase and the variety of its contexts. The evaluation showed that the automatically identified phrases cover about 84% of terms in domain texts. At the top of the ranked list, only 4% out of 400 terms were incorrect while out of the final 200, 20% of expressions were either not domain related or syntactically incorrect. We also observed that 70% of the obtained terms are not included in the Polish MeSH. Automatic terminology extraction can give results which are of a quality high enough to be taken as a starting point for building domain related terminological dictionaries or ontologies. This approach can be useful for preparing terminological resources for very specific subdomains for which no relevant terminologies already exist. The evaluation performed showed that none of the tested ranking procedures were

  14. Charging effect at grain boundaries of MoS2

    Science.gov (United States)

    Yan, Chenhui; Dong, Xi; Li, Connie H.; Li, Lian

    2018-05-01

    Grain boundaries (GBs) are inherent extended defects in chemical vapor deposited (CVD) transition metal dichalcogenide (TMD) films. Characterization of the atomic structure and electronic properties of these GBs is crucial for understanding and controlling the properties of TMDs via defect engineering. Here, we report the atomic and electronic structure of GBs in CVD grown MoS2 on epitaxial graphene/SiC(0001). Using scanning tunneling microscopy/spectroscopy, we find that GBs mostly consist of arrays of dislocation cores, where the presence of mid-gap states shifts both conduction and valence band edges by up to 1 eV. Our findings demonstrate the first charging effect near GBs in CVD grown MoS2, providing insights into the significant impact GBs can have on materials properties.

  15. Measurement of MOS current mismatch in the weak inversion region

    International Nuclear Information System (INIS)

    Forti, F.; Wright, M.E.

    1994-01-01

    The MOS transistor matching properties in the weak inversion region have not received, in the past, the attention that the mismatch in the strong inversion region has. The importance of weak inversion biased transistors in low power CMOS analog systems calls for more extensive data on the mismatch in this region of operation. The study presented in this paper was motivated by the need of controlling the threshold matching in a low power, low noise amplifier discriminator circuit used in a silicon radiation detector read-out, where both the transistor dimensions and the currents had to be kept to a minimum. The authors have measured the current matching properties of MOS transistors operated in the weak inversion region. They measured a total of about 1,400 PMOS and NMOS transistors produced in four different processes and report here the results in terms of mismatch dependence on current density, device dimensions, and substrate voltage, without using any specific model for the transistor

  16. Passivation of mechanically polished, chemically etched and anodized zirconium in various aqueous solutions: Impedance measurements

    International Nuclear Information System (INIS)

    Abo-Elenien, G.M.; Abdel-Salam, O.E.

    1987-01-01

    Zirconium and its alloys are finding increasing applications especially in water-cooled nuclear reactors. Because of the fact that zirconium is electronegative (E 0 = -1.529V) its corrosion resistance in aqueous solutions is largely determined by the existence of a thin oxide film on its surface. The structure and properties of this film depend in the first place on the method of surface pre-treatment. This paper presents an experimental study of the nature of the oxide film on mechanically polished, chemically etched and anodized zirconium. Ac impedance measurements carried out in various acidic, neutral and alkaline solutions show that the film thickness depends on the method of surface pre-treatment and the type of electrolyte solution. The variation of the potential and impedance during anodization of zirconium at low current density indicates that the initial stages of polarization consist of oxide build-up at a rate dependent on the nature of the electrode surface and the electrolyte. Oxygen evolution commences at a stage where oxide thickening starts to decline. The effect of frequency on the measured impedance indicates that the surface reactivity, and hence the corrosion rate, decreases in the following order: mechanically polished > chemically etched > anodized

  17. Micro-irradiation experiments in MOS transistors using synchrotron radiation

    International Nuclear Information System (INIS)

    Autran, J.L.; Masson, P.; Raynaud, C.; Freud, N.; Riekel, C.

    1999-01-01

    Spatially-resolved total-dose degradation has been performed in MOS transistors by focusing x-ray synchrotron radiation on the gate electrode with micrometer resolution. The influence of the resulting permanent degradation on device electrical properties has been analyzed using current-voltage and charge pumping measurements, in concert with optical characterization (hot-carrier luminescence) and one-dimensional device simulation. (authors)

  18. Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

    Science.gov (United States)

    Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

    2016-04-01

    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

  19. Enhanced photoresponse of monolayer molybdenum disulfide (MoS2) based on microcavity structure

    Science.gov (United States)

    Lu, Yanan; Yang, Guofeng; Wang, Fuxue; Lu, Naiyan

    2018-05-01

    There is an increasing interest in using monolayer molybdenum disulfide (MoS2) for optoelectronic devices because of its inherent direct band gap characteristics. However, the weak absorption of monolayer MoS2 restricts its applications, novel concepts need to be developed to address the weakness. In this work, monolayer MoS2 monolithically integrates with plane microcavity structure, which is formed by the top and bottom chirped distributed Bragg reflector (DBR), is demonstrated to improve the absorption of MoS2. The optical absorption is 17-fold enhanced, reaching values over 70% at work wavelength. Moreover, the monolayer MoS2-based photodetector device with microcavity presents a significantly increased photoresponse, demonstrating its promising prospects in MoS2-based optoelectronic devices.

  20. Graphite oxide and molybdenum disulfide composite for hydrogen evolution reaction

    Science.gov (United States)

    Niyitanga, Theophile; Jeong, Hae Kyung

    2017-10-01

    Graphite oxide and molybdenum disulfide (GO-MoS2) composite is prepared through a wet process by using hydrolysis of ammonium tetrathiomolybdate, and it exhibits excellent catalytic activity of the hydrogen evolution reaction (HER) with a low overpotential of -0.47 V, which is almost two and three times lower than those of precursor MoS2 and GO. The high performance of HER of the composite attributes to the reduced GO supporting MoS2, providing a conducting network for fast electron transport from MoS2 to electrodes. The composite also shows high stability after 500 cycles, demonstrating a synergistic effect of MoS2 and GO for efficient HER.

  1. Highly sensitive MoS2 photodetectors with graphene contacts

    Science.gov (United States)

    Han, Peize; St. Marie, Luke; Wang, Qing X.; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

    2018-05-01

    Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 1014 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS2. We study MoS2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

  2. Band structural properties of MoS2 (molybdenite)

    International Nuclear Information System (INIS)

    Gupta, V.P.

    1980-01-01

    Semiconductivity and superconductivity in MoS 2 (molybdenite) can be understood in terms of the band structure of MoS 2 . The band structural properties of MoS 2 are presented here. The energy dependence of nsub(eff) and epsilon(infinity)sub(eff) is investigated. Using calculated values of nsub(eff) and epsilon(infinity)sub(eff), the Penn gap has been determined. The value thus obtained is shown to be in good agreement with the reflectivity data and also with the value obtained from the band structure. The Ravindra and Srivastava formula has been shown to give values for the isobaric temperature gradient of Esub(G)[(deltaEsub(G)/deltaT)sub(P)], which are in agreement with the experimental data, and the contribution to (deltaEsub(G)/deltaT)sub(P) due to the electron lattice interaction has been evaluated. In addition, the electronic polarizability has been calculated using a modified Lorentz-Lorenz relation. (author)

  3. Farmers' pensions and the Polish economic crisis.

    Science.gov (United States)

    Simanis, J G

    1983-04-01

    The Polish Government, in 1977, inaugurated a new pension program that made old-age and invalidity benefits available for the first time to most farmers in that country. The evolution and eventual failure of that program were closely intertwined with a growing national economic crisis, manifested in widespread popular unrest and culminating in emergence of the Solidarity movement. The farmers' pension program was originally presented as both a social security measure and a vehicle for improving agricultural efficiency. The economic situation was expected to benefit as farms of older owners were passed to younger, presumably more efficient, successors, with the state sometimes acting as intermediary. A further step to bind the social security concept to agricultural efficiency came through relating the pension amount to the quantity of produce the individual farmer sold to the state over a number of years. The failure of these provisions and other unpopular features of the new program was aggravated by inflation and continuing deterioration of the Polish economy.

  4. Study on the performance of MoS2 modified PTFE composites by molding process

    Science.gov (United States)

    Ma, Weiqiang; Hou, Genliang; Bi, Song; Li, Ping; Li, Penghui

    2017-10-01

    MoS2 filled PTFE composites were prepared by cold pressing and sintering molding. The compressive and creep properties of composite materials were analyzed by controlling the size of molded composites during molding. The results show that the composites have the best compressive and creep resistance when the molding pressure is 55 MPa in the MoS2 composites with 15% mass fraction, which is a practical reference for the preparation of MoS2-modified PTFE composites.

  5. Seeing diabetes: visual detection of glucose based on the intrinsic peroxidase-like activity of MoS2 nanosheets

    Science.gov (United States)

    Lin, Tianran; Zhong, Liangshuang; Guo, Liangqia; Fu, Fengfu; Chen, Guonan

    2014-09-01

    Molybdenum disulfide (MoS2) has attracted increasing research interest recently due to its unique physical, optical and electrical properties, correlated with its 2D ultrathin atomic-layered structure. Until now, however, great efforts have focused on its applications such as lithium ion batteries, transistors, and hydrogen evolution reactions. Herein, for the first time, MoS2 nanosheets are discovered to possess an intrinsic peroxidase-like activity and can catalytically oxidize 3,3',5,5'-tetramethylbenzidine (TMB) by H2O2 to produce a color reaction. The catalytic activity follows the typical Michaelis-Menten kinetics and is dependent on temperature, pH, H2O2 concentration, and reaction time. Based on this finding, a highly sensitive and selective colorimetric method for H2O2 and glucose detection is developed and applied to detect glucose in serum samples. Moreover, a simple, inexpensive, instrument-free and portable test kit for the visual detection of glucose in normal and diabetic serum samples is constructed by utilizing agarose hydrogel as a visual detection platform.Molybdenum disulfide (MoS2) has attracted increasing research interest recently due to its unique physical, optical and electrical properties, correlated with its 2D ultrathin atomic-layered structure. Until now, however, great efforts have focused on its applications such as lithium ion batteries, transistors, and hydrogen evolution reactions. Herein, for the first time, MoS2 nanosheets are discovered to possess an intrinsic peroxidase-like activity and can catalytically oxidize 3,3',5,5'-tetramethylbenzidine (TMB) by H2O2 to produce a color reaction. The catalytic activity follows the typical Michaelis-Menten kinetics and is dependent on temperature, pH, H2O2 concentration, and reaction time. Based on this finding, a highly sensitive and selective colorimetric method for H2O2 and glucose detection is developed and applied to detect glucose in serum samples. Moreover, a simple, inexpensive

  6. Charge deep level transient spectroscopy study of 3 - 7 MeV/amu ion and fast neutron irradiation-induced changes in MOS structures

    International Nuclear Information System (INIS)

    Stano, J.; Skuratov, V.A.; Ziska, M.

    2001-01-01

    Radiation-induced changes in MOS capacitor structures irradiated with Bi (710 MeV), Kr (245 MeV), Ar (280, 155 MeV) ions and fast neutrons (E > 0.1 MeV) have been studied in view of Q-DLTS and C-V techniques. As was found, high energy ion and neutron irradiation enhance the induction of positive charge density in the oxide layer of MOS samples. The number of electrically active defects in this layer strongly decreases under dense electronic excitations. No dependence of vacancy-oxygen center concentration in silicon substrate normalized per number of displaced atoms by nuclear elastic collisions on projectile type have been observed

  7. The Czechoslovak-Polish Club in Brno (1925–1939)

    Czech Academy of Sciences Publication Activity Database

    Baron, Roman

    2011-01-01

    Roč. 3, č. 1 (2011), s. 43-64 ISSN 1803-6546 Institutional research plan: CEZ:AV0Z80150510 Keywords : Czechoslovak-Polish solidarity * Czechoslovak-Polish relations * Brno * associations * Interwar Period Subject RIV: AB - History

  8. Phonematic translation of Polish texts by the neural network

    International Nuclear Information System (INIS)

    Bielecki, A.; Podolak, I.T.; Wosiek, J.; Majkut, E.

    1996-01-01

    Using the back propagation algorithm, we have trained the feed forward neural network to pronounce Polish language, more precisely to translate Polish text into its phonematic counterpart. Depending on the input coding and network architecture, 88%-95% translation efficiency was achieved. (author)

  9. Etymology in the Polish Academy of Sciences Great Dictionary of ...

    African Journals Online (AJOL)

    The article offers an insight into etymological information provided in the Polish Academy of Sciences Great Dictionary of Polish (Pol. Wielki słownik języka polskiego PAN, WSJP PAN). The dictionary and the rules of producing the entries are briefly presented. These rules influence the way of working on etymology within ...

  10. Polish Qualitative Sociology. Insight into the future of postdisciplinary research

    OpenAIRE

    Konecki, Krzysztof

    2014-01-01

    The paper desctibes the definitions of following concepts: multidisiplinarity, interdisciplinarity, transdysciplinarity, postdisciplinarity. MOreover it discuss the meanings of a concept of discipline. It describes the place of the Polish qualitative sociology in the context of postdisciplinary research. The main question of paper is: Does the POlish Qualitative Sociology has entered the postdisciplinary phase of research? DGS, UL Krzysztof Konecki

  11. Analysis of optical and electronic properties of MoS2 for optoelectronics and FET applications

    Science.gov (United States)

    Ullah, Muhammad S.; Yousuf, Abdul Hamid Bin; Es-Sakhi, Azzedin D.; Chowdhury, Masud H.

    2018-04-01

    Molybdenum disulfide (MoS2) is considered as a promising alternative to conventional semiconductor materials that used in the IC industry because of its novel properties. In this paper, we explore the optical and electronic properties of MoS2 for photodetector and transistors applications. This simulation is done using `DFT materials properties simulator'. Our findings show that mono- and multi-layer MoS2 is suitable for conventional and tunnel FET applications due to direct and indirect band-gap respectively. The bulk MoS2 crystal, which are composed of stacked layers have indirect bandgap and mono-layer MoS2 crystal form direct bandgap at the K-point of Brillouin zone. Indirect bandgap of bulk MoS2 crystal implies that phonons need to be involved in band-to-band tunneling (BTBT) process. Degenerately doped semiconductor, which is basically spinning the Fermi level, changing the DOS profile, and thinning the indirect bandgap that allow tunneling from valence band to conduction band. The optical properties of MoS2 is explored in terms of Absorption coefficient, extinction coefficient and refractive index. Our results shows that a MoS2 based photodetector can be fabricate to detect light in the visible range (below 500nm). It is also observed that the MoS2 is most sensitive for the light of wavelength 450nm.

  12. Sequential structural and optical evolution of MoS2 by chemical synthesis and exfoliation

    Science.gov (United States)

    Kim, Ju Hwan; Kim, Jungkil; Oh, Si Duck; Kim, Sung; Choi, Suk-Ho

    2015-06-01

    Various types of MoS2 structures are successfully obtained by using economical and facile sequential synthesis and exfoliation methods. Spherically-shaped lumps of multilayer (ML) MoS2 are prepared by using a conventional hydrothermal method and were subsequently 1st-exfoliated in hydrazine while being kept in autoclave to be unrolled and separated into five-to-six-layer MoS2 pieces of several-hundred nm in size. The MoS2 MLs are 2nd-exfoliated in sodium naphthalenide under an Ar ambient to finally produce bilayer MoS2 crystals of ~100 nm. The sequential exfoliation processes downsize MoS2 laterally and reduce its number of layers. The three types of MoS2 allotropes exhibit particular optical properties corresponding to their structural differences. These results suggest that two-dimensional MoS2 crystals can be prepared by employing only chemical techniques without starting from high-pressure-synthesized bulk MoS2 crystals.

  13. Surface polishing of niobium for superconducting radio frequency (SRF) cavity applications

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Liang [College of William and Mary, Williamsburg, VA (United States)

    2014-08-01

    Niobium cavities are important components in modern particle accelerators based on superconducting radio frequency (SRF) technology. The interior of SRF cavities are cleaned and polished in order to produce high accelerating field and low power dissipation on the cavity wall. Current polishing methods, buffered chemical polishing (BCP) and electro-polishing (EP), have their advantages and limitations. We seek to improve current methods and explore laser polishing (LP) as a greener alternative of chemical methods. The topography and removal rate of BCP at different conditions (duration, temperature, sample orientation, flow rate) was studied with optical microscopy, scanning electron microscopy (SEM), and electron backscatter diffraction (EBSD). Differential etching on different crystal orientations is the main contributor to fine grain niobium BCP topography, with gas evolution playing a secondary role. The surface of single crystal and bi-crystal niobium is smooth even after heavy BCP. The topography of fine grain niobium depends on total removal. The removal rate increases with temperature and surface acid flow rate within the rage of 0~20 °C, with chemical reaction being the possible dominate rate control mechanism. Surface flow helps to regulate temperature and avoid gas accumulation on the surface. The effect of surface flow rate on niobium EP was studied with optical microscopy, atomic force microscopy (AFM), and power spectral density (PSD) analysis. Within the range of 0~3.7 cm/s, no significant difference was found on the removal rate and the macro roughness. Possible improvement on the micro roughness with increased surface flow rate was observed. The effect of fluence and pulse accumulation on niobium topography during LP was studied with optical microscopy, SEM, AFM, and PSD analysis. Polishing on micro scale was achieved within fluence range of 0.57~0.90 J/cm2, with pulse accumulation adjusted accordingly. Larger area treatment was proved possible by

  14. Note on the polishing of small spheres of ferrimagnetic materials

    Energy Technology Data Exchange (ETDEWEB)

    Grunberg, J. G.; Antier, G. [Centre d' etudes nucleaires de Grenoble - C.E.N.G. (France); Seiden, P. E. [Institut Fourier, Universite de Grenoble (France)

    1961-07-01

    This note describes a simple and rapid method that we have used for obtaining a high degree of polish on spheres of ferrimagnetic materials. A high surface polish is of particular importance if one desires to perform ferrimagnetic resonance experiments on very narrow linewidth materials such as Yttrium Iron Garnet. It is not possible to obtain the very narrow linewidths without polishing the sample with a very fine abrasive such as 'Linde A'. Although the methods presently used for the fine polishing of ferrite spheres give satisfactory results, the method described here is of particular interest because of its simplicity and speed. For example with the air-jet tumbling technique it can take as long as three days of polishing to obtain an acceptable surface while our method will give the same results in one to two hours. (author)

  15. Chemical mechanical polishing characteristics of ITO thin film prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Kang-Yeon; Choi, Gwon-Woo; Kim, Yong-Jae; Choi, Youn-Ok; Kim, Nam-Oh

    2012-01-01

    Indium-tin-oxide (ITO) thin films have attracted intensive interest because of their unique properties of good conductivity, high optical transmittance over the visible region and easy patterning ability. ITO thin films have found many applications in anti-static coatings, thermal heaters, solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), electroluminescent devices, sensors and organic light-emitting diodes (OLEDs). ITO thin films are generally fabricated by using various methods, such as spraying, chemical vapor deposition (CVD), evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive sputtering. In this research, ITO films were grown on glass substrates by using a radio-frequency (RF) magnetron sputtering method. In order to achieve a high transmittance and a low resistivity, we examined the various film deposition conditions, such as substrate temperature, working pressure, annealing temperature, and deposition time. Next, in order to improve the surface quality of the ITO thin films, we performed a chemical mechanical polishing (CMP) with different process parameters and compared the electrical and the optical properties of the polished ITO thin films. The best CMP conditions with a high removal rate, low nonuniformity, low resistivity and high transmittance were as follows: platen speed, head speed, polishing time, and slurry flow rate of 30 rpm, 30 rpm, 60 sec, and 60 ml/min, respectively.

  16. Charge yield for cobalt-60 and 10-keV x-ray irradiations of MOS devices

    International Nuclear Information System (INIS)

    Shaneyfelt, M.R.; Fleetwood, D.M.; Schwank, J.R.; Hughes, K.L.

    1991-01-01

    In this paper the radiation response of MOS devices exposed to 60 Co and low-energy (∼10 keV) x-ray irradiation is evaluated as a function of electric field during exposure. Improved charge yield estimates are obtained for 60 Co irradiations at fields below 1 MV/cm by matching voltage shifts due to oxide-trap and interface-trap charge to an E -0.55 electric field dependence. Combining these improved charge yield estimates and calculated dose enhancement factors, the relative response of x-ray to 60 Co irradiations is accurately predicted for oxide electric fields from 0.03 MV/cm to 5.0 MV/cm. The ability to predict the relative response of x-ray to 60 Co irradiations should speed acceptance of x-ray testers as a hardness assurance tool

  17. MoS2-modified ZnO quantum dots nanocomposite: Synthesis and ultrafast humidity response

    International Nuclear Information System (INIS)

    Ze, Lu; Yueqiu, Gong; Xujun, Li; Yong, Zhang

    2017-01-01

    Highlights: • MoS 2 @ZnO QDs composite structure was synthesized by two-steps methods. • Ultrafast humidity sensing response is achieved by MoS 2 @ZnO QDs humidity sensor. • Sensor performs excellent cycle stability from 11% to 95% RH. • Humidity sensor could detect wide humidity range (11–95%). - Abstract: In this work, ZnO quantum dots (QDs), layered MoS 2 and MoS 2 -modified ZnO QDs (MoS 2 @ZnO QDs) nanocomposite were synthesized and then applied as humidity sensor. The crystal structure, morphology and element distribution of ZnO QDs, MoS 2 and MoS 2 @ZnO QDs were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectrometry, respectively. The humidity sensing characteristics of the MoS 2 and MoS 2 @ZnO QDs against various relative humidity were measured at room temperature. The results show that the MoS 2 @ZnO QDs sensor exhibits high sensitivity with an impedance variation of three or four orders of magnitude to relative humidity range of 11–95% and it exhibits a short response-recovery time (1 s for adsorption and 20 s for desorption) and excellent repeatability. The mechanisms of the excellent performance for humidity sensing of MoS 2 @ZnO QDs sensor were discussed based on its impedance properties. Our work could offer guidelines to design higher performance especially ultrafast humidity response sensor utilizing the nanocomposite structure with two dimensional material and QDs.

  18. Antigenic typing Polish isolates of canine parvovirus

    Energy Technology Data Exchange (ETDEWEB)

    Mizak, B. [National Veterinary Research Institute, Pulawy (Poland); Plucienniczak, A. [Polish Academy ofd Sciences. Microbiology and Virology Center, Lodz (Poland)

    1995-12-31

    Polish strains of canine parvovirus isolated between 1982 and 1993 were examined to determine the extent to which the virus has evolved antigenically and genetically over eleven years. Two CPV isolates obtained in Warsaw in 1982 and Pulawy in 1993, were examined using monoclonal antibody typing, restriction analysis and sequencing VP-2 protein gene. Five other isolates from Warsaw and Pulawy were tested with the panel of monoclonal antibodies specific to CPV-2, CPV-2a and common for canine parvovirus, feline panleukopenia virus and milk enteritis virus. Results of the studies demonstrated that all isolates tested represented CPV-2a antigenic type. Rapid antigenic strain replacement recorded by Parrish and Senda in the U.S.A and Japan was not confirmed in Poland. (author). 30 refs, 2 tabs.

  19. Food patterns of Polish older people

    DEFF Research Database (Denmark)

    Wadolowska, L.; Danowska-Oziewicz, M.; Niedzwiedzka, E.

    2006-01-01

    Food patterns of Polish older people were separated and described. The research included 422 people aged 65+ years, living in 5 geographical locations. Participants of the study were selected in quota sampling. Criteria for recruitment included sex, age (65-^74 or 75+ years) and family status...... (living alone or living with other people). Respondents were asked questions about consumption of 55 food products. The factor analysis allowed for separating 21 food patterns. They included from 1 to 3 groups of products, intake of which was mutually dependant. Big number of separated food patterns...... and small number of products fonning joint food patterns speak in advocacy of relatively small reciprocal relationship between different food items consumed by the seniors in Poland....

  20. Attitudes of Polish Consumers Toward Experiential Marketing

    Directory of Open Access Journals (Sweden)

    Monika Skorek

    2017-01-01

    Full Text Available Purpose: The experience economy is a concept that can be defned as a new way of perceiving the market offer of an enterprise, focusing on the customer experience. Enterprises, both in the production and service industries, are becoming similar to one another on a massive scale, which makes it increasingly diffcult to stand out. The response to this can be to offer the consumer an unforgettable experience related to a product or service provided by a company. Methodology: This study analysed the results of qualitative research on the attitudes and opinions of Polish consumers on experience marketing. Results/fndings: The results showed that participants of the study were prepared to transition from the economy based on products or services to an economy based on experiences at a moderate level. They declared a willingness to participate in experiences offered by companies but at the same time focus on the cost and utility of them

  1. Antigenic typing Polish isolates of canine parvovirus

    International Nuclear Information System (INIS)

    Mizak, B.; Plucienniczak, A.

    1995-01-01

    Polish strains of canine parvovirus isolated between 1982 and 1993 were examined to determine the extent to which the virus has evolved antigenically and genetically over eleven years. Two CPV isolates obtained in Warsaw in 1982 and Pulawy in 1993, were examined using monoclonal antibody typing, restriction analysis and sequencing VP-2 protein gene. Five other isolates from Warsaw and Pulawy were tested with the panel of monoclonal antibodies specific to CPV-2, CPV-2a and common for canine parvovirus, feline panleukopenia virus and milk enteritis virus. Results of the studies demonstrated that all isolates tested represented CPV-2a antigenic type. Rapid antigenic strain replacement recorded by Parrish and Senda in the U.S.A and Japan was not confirmed in Poland. (author). 30 refs, 2 tabs

  2. Popularity of marijuana among Polish students

    Directory of Open Access Journals (Sweden)

    Michał Pająk

    2017-09-01

    Full Text Available Introduction and the aim: Marijuana is the most commonly used drug in the world (excluding alcohol and tobacco. According to the literature about 16% of Poles at the age of 16 to 64 years old, at least once have used cannabis. The aim of study was to estimate the popularity of marijuana among students of Polish universities. We also asked questions about respondents’ attitude towards marijuana and opinions about its validation. Material and methods: The study was conducted in 2017 on 132 individuals – 60 men and 72 women. The results were analyzed in STATISTICA 10 at p<0.05. Results:Out of interviewees, 63.6% of them, at least once in their lives, have used marijuana. This is a percentage of up to four times greater than that one given in the literature for the general population. Even 80% of men and 50% of women have tried marijuana at least once in their lives. Students of Catholic University of Lublin reach for marijuana significantly more often than students of Medical University of Lublin. The majority of respondents (53% treats marijuana as a "soft" drug, though up 67.4% believe that it has the addictive potential. More than a half of respondents (56.8% stands for liberalization of rules relevant to marijuana in Poland. Vast majority (70% of respondents believes that marijuana is easily available in Poland. Conclusions: Marijuana is a drug popular among students. The criminalization of drug use in Poland is not effective for the prevention of its use, the majority of respondents believes that marijuana is easily available in Poland. Considering the negative health and social consequences of the current state, it is worth wondering about making changes in the education system and Polish drug law.

  3. Droughts in historical times in Polish territory

    Science.gov (United States)

    Limanowka, Danuta; Cebulak, Elzbieta; Pyrc, Robert; Doktor, Radoslaw

    2015-04-01

    Climate change is one of the key environmental, social and economical issues, and it is also followed by political consequences. Impact of climate conditions on countries' economy is increasingly recognized, and a lot of attention is given, both in the global scale and by the individual national governments. In years 2008-2010, at the Poland -Institute of Meteorology and Water Management-National Research Institute was realized the KLIMAT Project on Impact of climate change on environment, economy and society (changes, effects and methods of reducing them, conclusions for science, engineering practice and economic planning) No. POIG01-03-01-14-011/08. The project was financed by the European Union and Polish state budget in frame of Innovative Economy Operational Programme. A very wide range of research was carried out in the different thematic areas. One of them was "Natural disasters and internal safety of the country (civil and economical)." The problem of drought in Poland was developed in terms of meteorology and hydrology. "Proxy" Data Descriptions very often inform about dry years and seasons, hot periods without precipitation. Analysis of historical material allowed to extract the years that have experienced prolonged periods of high temperatures and rainfall shortages. Weather phenomenon defined as drought belongs to extreme events. This information was very helpful in the process of indexing and thus to restore the course and intensity of climatic elements in the past. The analysis covered the period from year 1000 to modern times. Due to the limited information from the period of 1000-1500 the authors focused primarily on the period from 1500 to 2010. Analysis of the collected material has allowed the development of a highly precise temporal structure of the possible occurrence of dry periods to Polish territory.

  4. New perspectives in hydrodynamic radial polishing techniques for optical surfaces

    Science.gov (United States)

    Ruiz, Elfego; Sohn, Erika; Luna, Esteban; Salas, Luis; Cordero, Alberto; González, Jorge; Núñez, Manuel; Salinas, Javier; Cruz-González, Irene; Valdés, Jorge; Cabrera, Victor; Martínez, Benjamín

    2004-09-01

    In order to overcome classic polishing techniques, a novel hydrodynamic radial polishing tool (HyDRa) is presented; it is useful for the corrective lapping and fine polishing of diverse materials by means of a low-cost abrasive flux and a hydrostatic suspension system that avoids contact of the tool with the working surface. This tool enables the work on flat or curved surfaces of currently up to two and a half meters in diameter. It has the advantage of avoiding fallen edges during the polishing process as well as reducing tool wear out and deformation. The functioning principle is based on the generation of a high-velocity, high-pressure, abrasive emulsion flux with radial geometry. The polishing process is repeatable by means of the control of the tool operational parameters, achieving high degrees of precision and accuracy on optical and semiconductor surfaces, with removal rates of up to 9 mm3/hour and promising excellent surface polishing qualities. An additional advantage of this new tool is the possibility to perform interferometric measurements during the polishing process without the need of dismounting the working surface. A series of advantages of this method, numerical simulations and experimental results are described.

  5. Principles to Products: Toward Realizing MOS 2.0

    Science.gov (United States)

    Bindschadler, Duane L.; Delp, Christopher L.

    2012-01-01

    This is a report on the Operations Revitalization Initiative, part of the ongoing NASA-funded Advanced Multi-Mission Operations Systems (AMMOS) program. We are implementing products that significantly improve efficiency and effectiveness of Mission Operations Systems (MOS) for deep-space missions. We take a multi-mission approach, in keeping with our organization's charter to "provide multi-mission tools and services that enable mission customers to operate at a lower total cost to NASA." Focusing first on architectural fundamentals of the MOS, we review the effort's progress. In particular, we note the use of stakeholder interactions and consideration of past lessons learned to motivate a set of Principles that guide the evolution of the AMMOS. Thus guided, we have created essential patterns and connections (detailed in companion papers) that are explicitly modeled and support elaboration at multiple levels of detail (system, sub-system, element...) throughout a MOS. This architecture is realized in design and implementation products that provide lifecycle support to a Mission at the system and subsystem level. The products include adaptable multi-mission engineering documentation that describes essentials such as operational concepts and scenarios, requirements, interfaces and agreements, information models, and mission operations processes. Because we have adopted a model-based system engineering method, these documents and their contents are meaningfully related to one another and to the system model. This means they are both more rigorous and reusable (from mission to mission) than standard system engineering products. The use of models also enables detailed, early (e.g., formulation phase) insight into the impact of changes (e.g., to interfaces or to software) that is rigorous and complete, allowing better decisions on cost or technical trades. Finally, our work provides clear and rigorous specification of operations needs to software developers, further

  6. A Route to Permanent Valley Polarization in Monolayer MoS2

    KAUST Repository

    Singh, Nirpendra

    2016-10-24

    Realization of permanent valley polarization in Cr-doped monolayer MoS2 is found to be unfeasible because of extended moment formation. Introduction of an additional hole is suggested as a viable solution. V-doped monolayer MoS2 is demonstrated to sustain permanent valley polarization and therefore can serve as a prototype material for valleytronics.

  7. Few-layer MoS2 as nitrogen protective barrier

    Science.gov (United States)

    Akbali, B.; Yanilmaz, A.; Tomak, A.; Tongay, S.; Çelebi, C.; Sahin, H.

    2017-10-01

    We report experimental and theoretical investigations of the observed barrier behavior of few-layer MoS2 against nitrogenation. Owing to its low-strength shearing, low friction coefficient, and high lubricity, MoS2 exhibits the demeanor of a natural N-resistant coating material. Raman spectroscopy is done to determine the coating capability of MoS2 on graphene. Surface morphology of our MoS2/graphene heterostructure is characterized by using optical microscopy, scanning electron microscopy, and atomic force microscopy. In addition, density functional theory-based calculations are performed to understand the energy barrier performance of MoS2 against nitrogenation. The penetration of nitrogen atoms through a defect-free MoS2 layer is prevented by a very high vertical diffusion barrier, indicating that MoS2 can serve as a protective layer for the nitrogenation of graphene. Our experimental and theoretical results show that MoS2 material can be used both as an efficient nanocoating material and as a nanoscale mask for selective nitrogenation of graphene layer.

  8. Hydrothermal synthesis of flower-like MoS2 nanospheres for electrochemical supercapacitors.

    Science.gov (United States)

    Zhou, Xiaoping; Xu, Bin; Lin, Zhengfeng; Shu, Dong; Ma, Lin

    2014-09-01

    Flower-like MoS2 nanospheres were synthesized by a hydrothermal route. The structure and surface morphology of the as-prepared MoS2 was characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The supercapacitive behavior of MoS2 in 1 M KCl electrolyte was studied by means of cyclic voltammetry (CV), constant current charge-discharge cycling (CD) and electrochemical impedance spectroscopy (EIS). The XRD results indicate that the as-prepared MoS2 has good crystallinity. SEM images show that the MoS2 nanospheres have uniform sizes with mean diameter about 300 nm. Many nanosheets growing on the surface make the MoS2 nanospheres to be a flower-like structure. The specific capacitance of MoS2 is 122 F x g(-1) at 1 A x g(-1) or 114 F x g(-1) at 2 mv s(-1). All the experimental results indicate that MoS2 is a promising electrode material for electrochemical supercapacitors.

  9. Morphology-controlled synthesis of MoS2 nanostructures with different lithium storage properties

    International Nuclear Information System (INIS)

    Wang, Xiwen; Zhang, Zhian; Chen, Yaqiong; Qu, Yaohui; Lai, Yanqing; Li, Jie

    2014-01-01

    Highlights: • MoS 2 nanospheres, nanoribbons and nanoparticles were prepared by hydrothermal method. • The surfactant and temperature control the shape and crystal structure of MoS 2 . • MoS 2 nanospheres exhibit the excellent lithium storage property. - Abstract: A one-step hydrothermal process was employed to prepare a series of MoS 2 nanostructures via simply altering the surfactant as soft template and hydrothermal reaction temperature. Three kinds of MoS 2 nanostructures (three-dimensional (3D) hierarchical nanospheres, one-dimensional (1D) nanoribbons, and large aggregated nanoparticles) were successfully achieved and investigated well by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), and Brunauer–Emmett–Teller analysis (BET). Electrochemical tests reveal that these MoS 2 samples could deliver high initial discharge capacities (higher than 1050.0 mA h g −1 ), but various cycling performances. The hierarchical MoS 2 nanospheres assembled by sheet-like subunits show the highest specific capacity of 1355.1 mA h g −1 , and 66.8% of which can be retained after 50 cycles. The good lithium storage property of hierarchical MoS 2 nanospheres can be attributed to the higher electrolyte/MoS 2 contact area and stable 3D layered structure

  10. The Interface between Gd and Monolayer MoS2: A First-Principles Study

    KAUST Repository

    Zhang, Xuejing; Mi, Wenbo; Wang, Xiaocha; Cheng, Yingchun; Schwingenschlö gl, Udo

    2014-01-01

    We analyze the electronic structure of interfaces between two-, four- and six-layer Gd(0001) and monolayer MoS2 by first-principles calculations. Strong chemical bonds shift the Fermi energy of MoS2 upwards into the conduction band. At the surface

  11. Mos1 transposon-based transformation of fish cell lines using baculoviral vectors

    International Nuclear Information System (INIS)

    Yokoo, Masako; Fujita, Ryosuke; Nakajima, Yumiko; Yoshimizu, Mamoru; Kasai, Hisae; Asano, Shin-ichiro; Bando, Hisanori

    2013-01-01

    Highlights: •The baculovirus vector infiltrates the cells of economic important fishes. •Drosophila Mos1 transposase expressed in fish cells maintains its ability to localize to the nucleus. •The baculoviral vector carrying Mos1 is a useful tool to stably transform fish cells. -- Abstract: Drosophila Mos1 belongs to the mariner family of transposons, which are one of the most ubiquitous transposons among eukaryotes. We first determined nuclear transportation of the Drosophila Mos1-EGFP fusion protein in fish cell lines because it is required for a function of transposons. We next constructed recombinant baculoviral vectors harboring the Drosophila Mos1 transposon or marker genes located between Mos1 inverted repeats. The infectivity of the recombinant virus to fish cells was assessed by monitoring the expression of a fluorescent protein encoded in the viral genome. We detected transgene expression in CHSE-214, HINAE, and EPC cells, but not in GF or RTG-2 cells. In the co-infection assay of the Mos1-expressing virus and reporter gene-expressing virus, we successfully transformed CHSE-214 and HINAE cells. These results suggest that the combination of a baculovirus and Mos1 transposable element may be a tool for transgenesis in fish cells

  12. Atomic-scale structure of single-layer MoS2 nanoclusters

    DEFF Research Database (Denmark)

    Helveg, S.; Lauritsen, J. V.; Lægsgaard, E.

    2000-01-01

    We have studied using scanning tunneling microscopy (STM) the atomic-scale realm of molybdenum disulfide (MoS2) nanoclusters, which are of interest as a model system in hydrodesulfurization catalysis. The STM gives the first real space images of the shape and edge structure of single-layer MoS2...

  13. Mos1 transposon-based transformation of fish cell lines using baculoviral vectors

    Energy Technology Data Exchange (ETDEWEB)

    Yokoo, Masako [Laboratory of Applied Molecular Entomology, Division of Applied Bioscience, Research Faculty of Agriculture, Hokkaido University, Sapporo 060-8589 (Japan); Fujita, Ryosuke [Laboratory of Applied Molecular Entomology, Division of Applied Bioscience, Research Faculty of Agriculture, Hokkaido University, Sapporo 060-8589 (Japan); Innate Immunity Laboratory, Graduate School of Life Science and Creative Research Institution, Hokkaido University, Sapporo 001-0021 (Japan); Nakajima, Yumiko [Functional Genomics Group, COMB, Tropical Biosphere Research Center, University of the Ryukyus, Okinawa 903-0213 (Japan); Yoshimizu, Mamoru; Kasai, Hisae [Faculty of Fisheries Sciences, Hokkaido University, Hakodate 041-8611 (Japan); Asano, Shin-ichiro [Laboratory of Applied Molecular Entomology, Division of Applied Bioscience, Research Faculty of Agriculture, Hokkaido University, Sapporo 060-8589 (Japan); Bando, Hisanori, E-mail: hban@abs.agr.hokudai.ac.jp [Laboratory of Applied Molecular Entomology, Division of Applied Bioscience, Research Faculty of Agriculture, Hokkaido University, Sapporo 060-8589 (Japan)

    2013-09-13

    Highlights: •The baculovirus vector infiltrates the cells of economic important fishes. •Drosophila Mos1 transposase expressed in fish cells maintains its ability to localize to the nucleus. •The baculoviral vector carrying Mos1 is a useful tool to stably transform fish cells. -- Abstract: Drosophila Mos1 belongs to the mariner family of transposons, which are one of the most ubiquitous transposons among eukaryotes. We first determined nuclear transportation of the Drosophila Mos1-EGFP fusion protein in fish cell lines because it is required for a function of transposons. We next constructed recombinant baculoviral vectors harboring the Drosophila Mos1 transposon or marker genes located between Mos1 inverted repeats. The infectivity of the recombinant virus to fish cells was assessed by monitoring the expression of a fluorescent protein encoded in the viral genome. We detected transgene expression in CHSE-214, HINAE, and EPC cells, but not in GF or RTG-2 cells. In the co-infection assay of the Mos1-expressing virus and reporter gene-expressing virus, we successfully transformed CHSE-214 and HINAE cells. These results suggest that the combination of a baculovirus and Mos1 transposable element may be a tool for transgenesis in fish cells.

  14. Non-stoichiometry of MoS2 phase prepared by sputtering

    International Nuclear Information System (INIS)

    Ito, T.; Nakajima, K.

    1978-01-01

    The lattice parameters and S/Mo atomic ratio in sputtered MoS 2 films have been examined as a function of sputtering conditions, especially the vacuum pressure in the chamber. It was found that the deposited films had a defect MoS 2 structure ranging from 1.6 to 2 in S/Mo ratio, depending on the pressure. (author)

  15. MOS current gain cells with electronically variable gain and constant bandwidth

    NARCIS (Netherlands)

    Klumperink, Eric A.M.; Seevinck, Evert

    1989-01-01

    Two MOS current gain cells are proposed that provide linear amplification of currents supplied by several linear MOS V-I converters. The gain is electronically variable by a voltage or a current and can be made insensitive to temperature and IC processing. The gain cells have a constant

  16. A Confirmatory Factor Analysis of an Abbreviated Social Support Instrument: The MOS-SSS

    Science.gov (United States)

    Gjesfjeld, Christopher D.; Greeno, Catherine G.; Kim, Kevin H.

    2008-01-01

    Objective: Confirm the factor structure of the original 18-item Medical Outcome Study Social Support Survey (MOS-SSS) as well as two abbreviated versions in a sample of mothers with a child in mental health treatment. Method: The factor structure, internal consistency, and concurrent validity of the MOS-SSS were assessed using a convenience sample…

  17. Reel-to-reel substrate tape polishing system

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, Venkat; Gardner, Michael T.; Judd, Raymond D.; Weloth, Martin; Qiao, Yunfei

    2005-06-21

    Disclosed is a reel-to-reel single-pass mechanical polishing system (100) suitable for polishing long lengths of metal substrate tape (124) used in the manufacture of high-temperature superconductor (HTS) coated tape, including multiple instantiations of a polishing station (114) in combination with a subsequent rinsing station (116) arranged along the axis of the metal substrate tape (124) that is translating between a payout spool (110a) and a take-up spool (110b). The metal substrate tape obtains a surface smoothness that is suitable for the subsequent deposition of a buffer layer.

  18. Polishing Sapphire Substrates by 355 nm Ultraviolet Laser

    Directory of Open Access Journals (Sweden)

    X. Wei

    2012-01-01

    Full Text Available This paper tries to investigate a novel polishing technology with high efficiency and nice surface quality for sapphire crystal that has high hardness, wear resistance, and chemical stability. A Q-switched 355 nm ultraviolet laser with nanosecond pulses was set up and used to polish sapphire substrate in different conditions in this paper. Surface roughness Ra of polished sapphire was measured with surface profiler, and the surface topography was observed with scanning electronic microscope. The effects of processing parameters as laser energy, pulse repetition rate, scanning speed, incident angle, scanning patterns, and initial surface conditions on surface roughness were analyzed.

  19. Microscopic machining mechanism of polishing based on vibrations of liquid

    International Nuclear Information System (INIS)

    Huang, Z G; Guo, Z N; Chen, X; Yu, Z Q; Yu, T M; Lee, W B

    2007-01-01

    A molecular dynamics method has been applied to study the mechanism of polishing based on vibrations of liquid. Movements of polishing particles and formations of impact dents are simulated and discussed. The abrasive effect between particle and machined substrate is evaluated empirically. Polishing qualities, including roughness and fractal character under multiple impacts, are obtained by numerical methods. Results show that the particle will vibrate and roll viscously on the substrate. Press, tear and self-organization effects will be responsible for the formation of impact dents. Simulation results are compared with experimental data to verify the conclusions

  20. Presentation of the verbs in Bulgarian-Polish electronic dictionary

    Directory of Open Access Journals (Sweden)

    Ludmila Dimitrova

    2014-09-01

    Full Text Available Presentation of the verbs in Bulgarian-Polish electronic dictionary This paper briefly discusses the presentation of the verbs in the first electronic Bulgarian-Polish dictionary that is currently being developed under a bilateral collaboration between IMI-BAS and ISS-PAS. Special attention is given to the digital entry classifiers that describe Bulgarian and Polish verbs. Problems related to the correspondence between natural language phenomena and their presentations are discussed. Some examples illustrate the different types of dictionary entries for verbs.

  1. "Agricultural budget" and the competitiveness of the Polish agriculture

    OpenAIRE

    Lenkiewicz, Stanisław; Rokicki, Bartłomiej

    2014-01-01

    The aim of the publication is to assess the impact of public support on the functioning of the Polish agriculture. In order to achieve this aim the publication includes an analysis of the system of direct payments and rural development policy instruments planned to be implemented in Poland within the CAP 2014-2020. The study also presents an analysis of regional diversity of the Polish agriculture and an assessment of the scale of agricultural investment made in recent years in all the Polish...

  2. A new optimized self-firing mos-thyristor device

    Energy Technology Data Exchange (ETDEWEB)

    Breil, M.; Sanchez, J.L.; Austin, P.; Laur, J.P.

    1998-12-01

    In this paper, a new integrated self-firing and controlled turn-off MOS-thyristor structure is investigated. An analytical model describing the turn-off operation and parasitic latch-up has been developed, allowing to highlight and optimize the physical and geometrical parameters acting upon main electrical characteristics. The analytical model is validated by 2D simulations using PISCES. The technological fabrication process is optimized by 2D simulations using SUPREM IV. Electrical characterization results of fabricated test structures are presented. (authors) 6 refs.

  3. Atomic and electronic structure of MoS2 nanoparticles

    DEFF Research Database (Denmark)

    Bollinger, Mikkel; Jacobsen, Karsten Wedel; Nørskov, Jens Kehlet

    2003-01-01

    Using density-functional theory (DFT) we present a detailed theoretical study of MoS2 nanoparticles. We focus on the edge structures, and a number of different edge terminations are investigated. Several, but not all, of these configurations have one-dimensional metallic states localized at the e...... and the composition of the gas phase. Using the Tersoff-Hamann formalism, scanning-tunneling microscopy (STM) images of the edges are simulated for direct comparison with recent STM experiments. In this way we identify the experimentally observed edge structure....

  4. Strained Si/SiGe MOS transistor model

    Directory of Open Access Journals (Sweden)

    Tatjana Pešić-Brđanin

    2009-06-01

    Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

  5. Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse.

    Science.gov (United States)

    Oliva, Nicoló; Casu, Emanuele Andrea; Yan, Chen; Krammer, Anna; Rosca, Teodor; Magrez, Arnaud; Stolichnov, Igor; Schueler, Andreas; Martin, Olivier J F; Ionescu, Adrian Mihai

    2017-10-27

    Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS 2 ) on a phase transition material, vanadium dioxide (VO 2 ). The vdW MoS 2 /VO 2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO 2 . We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.

  6. Frequency dispersion analysis of thin dielectric MOS capacitor in a five-element model

    Science.gov (United States)

    Zhang, Xizhen; Zhang, Sujuan; Zhu, Huichao; Pan, Xiuyu; Cheng, Chuanhui; Yu, Tao; Li, Xiangping; Cheng, Yi; Xing, Guichao; Zhang, Daming; Luo, Xixian; Chen, Baojiu

    2018-02-01

    An Al/ZrO2/IL/n-Si (IL: interface layer) MOS capacitor has been fabricated by metal organic decomposition of ZrO2 and thermal deposition Al. We have measured parallel capacitance (C m) and parallel resistance (R m) versus bias voltage curves (C m, R m-V) at different AC signal frequency (f), and C m, R m-f curves at different bias voltage. The curves of C m, R m-f measurements show obvious frequency dispersion in the range of 100 kHz-2 MHz. The energy band profile shows that a large voltage is applied on the ZrO2 layer and IL at accumulation, which suggests possible dielectric polarization processes by some traps in ZrO2 and IL. C m, R m-f data are used for frequency dispersion analysis. To exclude external frequency dispersion, we have extracted the parameters of C (real MOS capacitance), R p (parallel resistance), C IL (IL capacitance), R IL (IL resistance) and R s (Si resistance) in a five-element model by using a three-frequency method. We have analyzed intrinsic frequency dispersion of C, R p, C IL, R IL and R s by studying the dielectric characteristics and Si surface layer characteristics. At accumulation, the dispersion of C and R p is attributed to dielectric polarization such as dipolar orientation and oxide traps. The serious dispersion of C IL and R IL are relative to other dielectric polarization, such as border traps and fixed oxide traps. The dispersion of R s is mainly attributed to contact capacitance (C c) and contact resistance (R c). At depletion and inversion, the frequency dispersion of C, R p, C IL, R IL, and R s are mainly attributed to the depletion layer capacitance (C D). The interface trap capacitance (C it) and interface trap resistance (R it) are not dominant for the dispersion of C, R p, C IL, R IL, and R s.

  7. Carbon Domains on MoS2/TiO2 System via Catalytic Acetylene Oligomerization: Synthesis, Structure, and Surface Properties

    Directory of Open Access Journals (Sweden)

    Sara Cravanzola

    2017-11-01

    Full Text Available Carbon domains have been obtained at the surface of a MoS2/TiO2 (Evonik, P25 system via oligomerization and cyclotrimerization reactions involved in the interaction of the photoactive material with acetylene. Firstly, MoS2 nanosheets have been synthesized at the surface of TiO2, via sulfidation of a molybdenum oxide precursor with H2S (bottom-up method. Secondly, the morphology and the structure, the optical and the vibrational properties of the obtained materials, for each step of the synthesis procedure, have been investigated by microscopy and spectroscopy methods. In particular, transmission electron microscopy images provide a simple tool to highlight the effectiveness of the sulfidation process, thus showing 1L, 2L, and stacked MoS2 nanosheets anchored to the surface of TiO2 nanoparticles. Lastly, in-situ FTIR spectroscopy investigation gives insights into the nature of the oligomerized species, showing that the formation of both polyenic and aromatic systems can be taken into account, being their formation promoted by both Ti and Mo catalytic sites. This finding gives an opportunity for the assembly of extended polyenic, polyaromatic, or mixed domains firmly attached at the surface of photoactive materials. The presented approach, somehow different from the carbon adding or doping processes of TiO2, is of potential interest for the advanced green chemistry and energy conversion/transport applications.

  8. Comparative studies of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin film growth method

    International Nuclear Information System (INIS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lee, Ching-Sung

    2013-01-01

    This paper reports Al 0.27 Ga 0.73 N/GaN metal–oxide–semiconductor high electron mobility transistors (MOS-HEMTs) with stacked Al 2 O 3 /HfO 2 gate dielectrics by using hydrogen peroxideoxidation/sputtering techniques. The Al 2 O 3 employed as a gate dielectric and surface passivation layer effectively suppresses the gate leakage current, improves RF drain current collapse and exhibits good thermal stability. Moreover, by stacking the good insulating high-k HfO 2 dielectric further suppresses the gate leakage, enhances the dielectric breakdown field and power-added efficiency, and decreases the equivalent oxide thickness. The present MOS-HEMT design has demonstrated superior improvements of 10.1% (16.4%) in the maximum drain–source current (I DS,max ), 11.4% (22.5%) in the gate voltage swing and 12.5%/14.4% (21.9%/22.3%) in the two-terminal gate–drain breakdown/turn-on voltages (BV GD /V ON ), and the present design also demonstrates the lowest gate leakage current and best thermal stability characteristics as compared to two reference MOS-HEMTs with a single Al 2 O 3 /(HfO 2 ) dielectric layer of the same physical thickness. (invited paper)

  9. Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2.

    Science.gov (United States)

    Dhakal, Krishna P; Duong, Dinh Loc; Lee, Jubok; Nam, Honggi; Kim, Minsu; Kan, Min; Lee, Young Hee; Kim, Jeongyong

    2014-11-07

    We performed a nanoscale confocal absorption spectral imaging to obtain the full absorption spectra (over the range 1.5-3.2 eV) within regions having different numbers of layers and studied the variation of optical transition depending on the atomic thickness of the MoS2 film. Three distinct absorption bands corresponding to A and B excitons and a high-energy background (BG) peak at 2.84 eV displayed a gradual redshift as the MoS2 film thickness increased from the monolayer, to the bilayer, to the bulk MoS2 and this shift was attributed to the reduction of the gap energy in the Brillouin zone at the K-point as the atomic thickness increased. We also performed n-type chemical doping of MoS2 films using reduced benzyl viologen (BV) and the confocal absorption spectra modified by the doping showed a strong dependence on the atomic thickness: A and B exciton peaks were greatly quenched in the monolayer MoS2 while much less effect was shown in larger thickness and the BG peak either showed very small quenching for 1 L MoS2 or remained constant for larger thicknesses. Our results indicate that confocal absorption spectral imaging can provide comprehensive information on optical transitions of microscopic size intrinsic and doped two-dimensional layered materials.

  10. Growth, structure and stability of sputter-deposited MoS2 thin films

    Directory of Open Access Journals (Sweden)

    Reinhard Kaindl

    2017-05-01

    Full Text Available Molybdenum disulphide (MoS2 thin films have received increasing interest as device-active layers in low-dimensional electronics and also as novel catalysts in electrochemical processes such as the hydrogen evolution reaction (HER in electrochemical water splitting. For both types of applications, industrially scalable fabrication methods with good control over the MoS2 film properties are crucial. Here, we investigate scalable physical vapour deposition (PVD of MoS2 films by magnetron sputtering. MoS2 films with thicknesses from ≈10 to ≈1000 nm were deposited on SiO2/Si and reticulated vitreous carbon (RVC substrates. Samples deposited at room temperature (RT and at 400 °C were compared. The deposited MoS2 was characterized by macro- and microscopic X-ray, electron beam and light scattering, scanning and spectroscopic methods as well as electrical device characterization. We find that room-temperature-deposited MoS2 films are amorphous, of smooth surface morphology and easily degraded upon moderate laser-induced annealing in ambient conditions. In contrast, films deposited at 400 °C are nano-crystalline, show a nano-grained surface morphology and are comparatively stable against laser-induced degradation. Interestingly, results from electrical transport measurements indicate an unexpected metallic-like conduction character of the studied PVD MoS2 films, independent of deposition temperature. Possible reasons for these unusual electrical properties of our PVD MoS2 thin films are discussed. A potential application for such conductive nanostructured MoS2 films could be as catalytically active electrodes in (photo-electrocatalysis and initial electrochemical measurements suggest directions for future work on our PVD MoS2 films.

  11. Evaluating Mechanical Properties of Few Layers MoS2 Nanosheets-Polymer Composites

    Directory of Open Access Journals (Sweden)

    Muhammad Bilal Khan

    2017-01-01

    Full Text Available The reinforcement effects of liquid exfoliated molybdenum disulphide (MoS2 nanosheets, dispersed in polystyrene (PS matrix, are evaluated here. The range of composites (0~0.002 volume fraction (Vf MoS2-PS is prepared via solution casting. Size selected MoS2 nanosheets (3~4 layers, with a lateral dimension L 0.5~1 µm, have improved Young’s modulus up to 0.8 GPa for 0.0002 Vf MoS2-PS as compared to 0.2 GPa observed for PS only. The ultimate tensile strength (UTS is improved considerably (~×3 with a minute addition of MoS2 nanosheets (0.00002 Vf. The MoS2 nanosheets lateral dimension and number of layers are approximated using atomic force microscopy (AFM. The composites formation is confirmed using X-ray diffraction (XRD and scanning electron microscopy (SEM. Theoretical predicted results (Halpin-Tsai model are well below the experimental findings, especially at lower concentrations. Only at maximum concentrations, the experimental and theoretical results coincide. The high aspect ratio of MoS2 nanosheets, homogeneous dispersion inside polymer, and their probable planar orientation are the possible reasons for the effective stress transfer, resulting in enhanced mechanical characteristics. Moreover, the micro-Vickers hardness (HV of the MoS2-PS is also improved from 19 (PS to 23 (0.002 Vf MoS2-PS as MoS2 nanosheets inclusion may hinder the deformation more effectively.

  12. Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

    KAUST Repository

    He, Xin; Li, Hai; Zhu, Zhiyong; Dai, Zhenyu; Yang, Yang; Yang, Peng; Zhang, Qiang; Li, Peng; Schwingenschlö gl, Udo; Zhang, Xixiang

    2016-01-01

    Mechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.

  13. Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

    KAUST Repository

    He, Xin

    2016-10-27

    Mechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.

  14. Applying low-energy multipulse excimer laser annealing to improve charge retention of Au nanocrystals embedded MOS capacitors

    International Nuclear Information System (INIS)

    Shen, Kuan-Yuan; Chen, Hung-Ming; Liao, Ting-Wei; Kuan, Chieh-Hsiung

    2015-01-01

    The low-energy multipulse excimer laser annealing (LEM-ELA) is proposed to anneal the nanostructure of nanocrystal (NC) embedded in a SiO 2 thin film without causing atomic diffusion and damaging the NCs, since the LEM-ELA combining the advantages of laser annealing and UV curing features rapid heating and increasing oxide network connectivity. A Fourier transform infrared spectroscopy (FTIR) characterization of SiO 2 thin films annealed using LEM-ELA indicated that the quality was improved through the removal of water-related impurities and the reconstruction of the network Si–O–Si bonds. Then, LEM-ELA was applied to a SiO 2 thin film embedded with Au NCs, which were fabricated as MOS capacitors. The charge retention was greatly improved and the percentage of retained charges was about 10% after 3  ×  10 8  s. To investigate and differentiate the effects of LEM-ELA on charges stored in both oxide traps and in the Au NCs, a double-mechanism charge relaxation analysis was performed. The results indicated that the oxide traps were removed and the confinement ability of Au NCs was enhanced. The separated memory windows contributed from the charges in Au NCs and those in oxide traps were obtained and further confirmed that the LEM-ELA removed oxide traps without damaging the Au NCs. (paper)

  15. Scaling properties of Polish rain series

    Science.gov (United States)

    Licznar, P.

    2009-04-01

    Scaling properties as well as multifractal nature of precipitation time series have not been studied for local Polish conditions until recently due to lack of long series of high-resolution data. The first Polish study of precipitation time series scaling phenomena was made on the base of pluviograph data from the Wroclaw University of Environmental and Life Sciences meteorological station located at the south-western part of the country. The 38 annual rainfall records from years 1962-2004 were converted into digital format and transformed into a standard format of 5-minute time series. The scaling properties and multifractal character of this material were studied by means of several different techniques: power spectral density analysis, functional box-counting, probability distribution/multiple scaling and trace moment methods. The result proved the general scaling character of time series at the range of time scales ranging form 5 minutes up to at least 24 hours. At the same time some characteristic breaks at scaling behavior were recognized. It is believed that the breaks were artificial and arising from the pluviograph rain gauge measuring precision limitations. Especially strong limitations at the precision of low-intensity precipitations recording by pluviograph rain gauge were found to be the main reason for artificial break at energy spectra, as was reported by other authors before. The analysis of co-dimension and moments scaling functions showed the signs of the first-order multifractal phase transition. Such behavior is typical for dressed multifractal processes that are observed by spatial or temporal averaging on scales larger than the inner-scale of those processes. The fractal dimension of rainfall process support derived from codimension and moments scaling functions geometry analysis was found to be 0.45. The same fractal dimension estimated by means of the functional box-counting method was equal to 0.58. At the final part of the study

  16. Polish electoral geography and its methods

    Directory of Open Access Journals (Sweden)

    Zbigniew Rykiel

    2011-01-01

    Full Text Available Differences in the understanding of electoral geography between social sciences are discussed in the article. Main fields and spatial scales of Polish electoral geography are identified. Main methods of multidimensional statistics are discussed. A necessity of a proper choice, based on theories of voting behaviour, of explaning variables to statistical models are emphasised. Regression analysis indicates only a formal usefulness in electoral geography, for quantitative relationships between variables in the model can be evidenced, which may be meaningless not only essentially, but even statistically. The application of canonical analysis in electoral geography brought a methodological turning-point to the statistical approach. This method allowed to combine: (1 the foundation of the selection of input variables on theories of voting behaviour; (2 the analysis of dependence of the electoral results on socio-economic characteristics of areas; (3 an identification of electoral options; (4 a quantification of the role of the historical heritage in the contemporary voting behaviour; and (5 the analysis of the stability of the electoral space. A well grounded opinion was weakened about the general competitiveness of right- and left-wing parties in Poland’s political space. Parties with similar rather than different programmes compete in given areas. It was indicated that elections have only formal influence on the structure of Parliament while the electoral system is decisive. Electoral, including territorial, manipulations also play their part. The empirical analysis indicated that Poland’s political space is polarised between the right-wing-oriented areas of the south-eastern half of the country and the left-wing-oriented areas of the north-western half. The political competition between the left and the right operates merely on the national scale, while it is not reflected territorially.The quantification of the influence of the nineteenth

  17. Investigations of AlGaN/GaN MOS-HEMT with Al2O3 deposition by ultrasonic spray pyrolysis method

    International Nuclear Information System (INIS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Wu, Yu-Sheng; Lee, Ching-Sung; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min; Chiang, Meng-Hsueh

    2015-01-01

    This work investigates Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on SiC substrate by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. The Al 2 O 3 was deposited as gate dielectric and surface passivation simultaneously to effectively suppress gate leakage current, enhance output current density, reduce RF drain current collapse, and improve temperature-dependent stabilities performance. The present MOS-HEMT design has shown improved device performances with respect to a Schottky-gate HEMT, including drain-source saturation current density at zero gate bias (I DSS : 337.6 mA mm −1  → 462.9 mA mm −1 ), gate-voltage swing (GVS: 1.55 V → 2.92 V), two-terminal gate-drain breakdown voltage (BV GD : −103.8 V → −183.5 V), unity-gain cut-off frequency (f T : 11.3 GHz → 17.7 GHz), maximum oscillation frequency (f max : 14.2 GHz → 19.1 GHz), and power added effective (P.A.E.: 25.1% → 43.6%). The bias conditions for measuring f T and f max of the studied MOS-HEMT (Schottky-gate HEMT) are V GS  = −2.5 (−2) V and V DS  = 7 V. The corresponding V GS and V DS biases are −2.5 (−2) V and 15 V for measuring the P.A.E. characteristic. Moreover, small capacitance-voltage (C–V) hysteresis is obtained in the Al 2 O 3 -MOS structure by using USPD. Temperature-dependent characteristics of the present designs at 300–480 K are also studied. (paper)

  18. DEMONSTRATION BULLETIN: COLLOID POLISHING FILTER METHOD - FILTER FLOW TECHNOLOGY, INC.

    Science.gov (United States)

    The Filter Flow Technology, Inc. (FFT) Colloid Polishing Filter Method (CPFM) was tested as a transportable, trailer mounted, system that uses sorption and chemical complexing phenomena to remove heavy metals and nontritium radionuclides from water. Contaminated waters can be pro...

  19. The resettlement of Polish refugees after the second world war

    Directory of Open Access Journals (Sweden)

    Agata Blaszczyk

    2017-02-01

    Full Text Available The passing of the Polish Resettlement Act and the creation of the different agencies related to it undoubtedly represented an unprecedented response to the challenge of mass migration in the UK.

  20. Comparative study of performance of shoe polishes formulated from ...

    African Journals Online (AJOL)

    GARZALI

    1Department of Pure and Industrial Chemistry, Bayero University, Kano. 2College of Science ... carbon black pigment. Polyethylene polish like the one formulated using carbon black pigment was ... into fine black powder. Purification of Wax.

  1. Polish Defense Policy in the Context of National Security Strategy

    National Research Council Canada - National Science Library

    Bieniek, Piotr S

    2006-01-01

    ...) and the North Atlantic Treaty Organization (NATO). Polish security policy and strategy is shaped by its geographical location, which places Poland in NATO's main strategic area opposite the Russian Federation and Belarus...

  2. Employability management practices in the Polish ICT sector

    NARCIS (Netherlands)

    Marzec, I.; van der Heijden, Beatrice; Scholarios, D.; van der Schoot, E.; Jedrzejowicz, P.; Bozionelos, N.; Epitropaki, O.; Knauth, P.; Mikkelsen, A.; van der Heijde, C.M.

    2009-01-01

    This article examines current career thinking and employability management practices within the Polish Information and Communication Technology (ICT) sector. The aim of this contribution is to identify career management problems and to determine obstacles for implementing employability management

  3. Super Polishing of Aluminum 6061-T6 Mirrors, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — An innovative 2D super-polishing process for Aluminum 6061-T6 planar mirrors which removes diamond point turning (DPT) grooves and attains rms surface finishes below...

  4. Research on high-efficiency polishing technology of photomask substrate

    Science.gov (United States)

    Zhao, Shijie; Xie, Ruiqing; Zhou, Lian; Liao, Defeng; Chen, Xianhua; Wang, Jian

    2018-03-01

    A method of photomask substrate fabrication is demonstrated ,that the surface figure and roughness of fused silica will converge to target precision rapidly with the full aperture polishing. Surface figure of optical flats in full aperture polishing processes is primarily dependent on the surface profile of polishing pad, therefor, a improved function of polishing mechanism was put forward based on two axis lapping machine and technology experience, and the pad testing based on displacement sensor and the active conditioning method of the pad is applied in this research. Moreover , the clamping deformation of the thin glass is solved by the new pitch dispensing method. The experimental results show that the surface figure of the 152mm×152mm×6.35mm optical glass is 0.25λ(λ=633nm) and the roughness is 0.32nm ,which has meet the requirements of mask substrate for 90 45nm nodes.

  5. Modeling of A-DLTS Spectra of MOS Structures

    Directory of Open Access Journals (Sweden)

    Peter Hockicko

    2008-01-01

    Full Text Available Acquisition of basic characteristic of defects has become possible through a wide class of measurement techniqueswhich probe the interface, the near interface, as well as the bulk of semiconductor. Results presented here are basedessentially on the acoustic version of Deep Level Transient Spectroscopy (A-DLTS measurements. This method is based onthe acoustoelectric response effect observed at the interface. The A-DLTS uses the acoustoelectric response signal (ARSproduced by MOS structure interface when a longitudal acoustic wave propagates through a structure. The ARS is extremelysensitive to external conditions of the structure and reflects any changes in the charge distribution connected with chargedtraps. The temperature dependence of ARS after bias voltage step application is investigated and the activation energies andsome other parameters of traps at the insulator – semiconductor interface are determined. The results obtained formArrhenius plots of A-DLTS spectra of selected MOS structures are compared with results obtained from modeling of ADLTS spectra using theoretical model.

  6. BATMAN: a DMD-based MOS demonstrator on Galileo Telescope

    Science.gov (United States)

    Zamkotsian, Frédéric; Spanò, Paolo; Bon, William; Riva, Marco; Lanzoni, Patrick; Nicastro, Luciano; Molinari, Emilio; Cosentino, Rosario; Ghedina, Adriano; Gonzalez, Manuel; Di Marcantonio, Paolo; Coretti, Igor; Cirami, Roberto; Manetta, Marco; Zerbi, Filippo; Tresoldi, Daniela; Valenziano, Luca

    2012-09-01

    Multi-Object Spectrographs (MOS) are the major instruments for studying primary galaxies and remote and faint objects. Current object selection systems are limited and/or difficult to implement in next generation MOS for space and groundbased telescopes. A promising solution is the use of MOEMS devices such as micromirror arrays which allow the remote control of the multi-slit configuration in real time. We are developing a Digital Micromirror Device (DMD) - based spectrograph demonstrator called BATMAN. We want to access the largest FOV with the highest contrast. The selected component is a DMD chip from Texas Instruments in 2048 x 1080 mirrors format, with a pitch of 13.68μm. Our optical design is an all-reflective spectrograph design with F/4 on the DMD component. This demonstrator permits the study of key parameters such as throughput, contrast and ability to remove unwanted sources in the FOV (background, spoiler sources), PSF effect, new observational modes. This study will be conducted in the visible with possible extension in the IR. A breadboard on an optical bench, ROBIN, has been developed for a preliminary determination of these parameters. The demonstrator on the sky is then of prime importance for characterizing the actual performance of this new family of instruments, as well as investigating the operational procedures on astronomical objects. BATMAN will be placed on the Nasmyth focus of Telescopio Nazionale Galileo (TNG) during next year.

  7. Characterising large area silicon drift detectors with MOS injectors

    International Nuclear Information System (INIS)

    Bonvicini, V.; Rashevsky, A.; Vacchi, A.

    1999-01-01

    In the framework of the INFN DSI project, the first prototypes of a large-area Silicon Drift Detector (SDD) have been designed and produced on 5'' diameter wafers of Neutron Transmutation Doped (NTD) silicon with a resistivity of 3000 Ω·cm. The detector is a 'butterfly' bi-directional structure with a drift length of 32 mm and the drifting charge is collected by two arrays of anodes having a pitch of 200 μm. The high-voltage divider is integrated on-board and is realised with p + implantations. For test and calibration purposes, the detector has a new type of MOS injector. The paper presents results obtained to injecting charge at the maximum drift distance (32mm) from the anodes by means of the MOS injecting structure, As front-end electronics, the authors have used a 32-channels low-noise bipolar VLSI circuit (OLA, Omni-purpose Low-noise Amplifer) specifically designed for silicon drift detectors. The uniformity of the drift time in different regions of the sensitive area and its dependence on the ambient temperature are studied

  8. MEGARA, the new IFU and MOS for the GTC

    Science.gov (United States)

    Gil de Paz, A.; Gallego, J.; Carrasco, E.; Iglesias-Páramo, J.; Sánchez Moreno, F. M.; Vílchez, J. M.; García Vargas, M. L.; Arrillaga, X.; Carrera, M. A.; Castillo-Morales, A.; Castillo-Domínguez, E.; Cedazo, R.; Eliche-Moral, M. C.; Ferrusca, D.; González-Guardia, E.; Lefort, B.; Maldonado, M.; Marino, R. A.; Martínez-Delgado, I.; Morales Durán, I.; Mujica, E.; Páez, G.; Pascual, S.; Pérez-Calpena, A.; Sánchez-Penim, A.; Sánchez-Blanco, E.; Tulloch, S.; Velázquez, M.; Zamorano, J.; Aguerri, A. L.; Barrado y Naváscues, D.; Bertone, E.; Cardiel, N.; Cava, A.; Cenarro, J.; Chávez, M.; García, M.; Guichard, J.; Guzmán, R.; Herrero, A.; Huélamo, N., Hughes, D.; Jiménez-Vicente, J.; Kehrig, C.; Márquez, I.; Masegosa, J.; Mayya, Y. D.; Méndez-Abreu, J.; Mollá, M.; Muñoz-Tuñón, C.; Peimbert, M.; Pérez-González, P. G.; Pérez Montero, E.; Rodríguez, M.; Rodríguez-Espinosa, J. M.; Rodríguez-Merino, L.; Rosa-González, D.; Sánchez-Almeida, J.; Sánchez Contreras, C.; Sánchez-Blázquez, P.; Sánchez, S. F.; Sarajedini, A.; Silich, S.; Simón-Díaz, S.; Tenorio-Tagle, G.; Terlevich, E.; Terlevich, R.; Torres-Peimbert, S.; Trujillo, I.; Tsamis, Y.; Vega, O.; Villar, V.

    2015-05-01

    MEGARA (Multi-Espectrógrafo en GTC de Alta Resolución para Astronomía) is the future intermediate-resolution optical Integral-Field Unit (IFU) and Multi-Object Spectrograph (MOS) of the 10.4m GTC telescope. The instrument can be used to observe either a contiguous (100% filling factor) field-of-view of 12.5×11.3 arcsec^{2} or 92 objects anywhere in a 3.5×3.5 arcmin^{2} field patrolled by robotic actuactors attached to optical-fiber minibundles, respectively in its IFU and MOS modes. The MEGARA Consortium is led by the Universidad Complutense de Madrid (UCM, Spain) and also includes the Instituto Nacional de Astrofísica, óptica y Electrónica (INAOE, Mexico), the Instituto de Astrofísica de Andalucía (IAA-CSIC, Spain) and the Universidad Politécnica de Madrid (UPM, Spain). The instrument passed its Critical Design Review (CDR) on late 2014 and is currently in construction phase with a planned date for the start of operations at GTC on early 2017. In this paper we summarize the main characteristics of the instrument and the status of the project.

  9. Reusing Ceramic Tile Polishing Waste In Paving Block Manufacturing

    OpenAIRE

    Giordano Penteado; Carmenlucia Santos; de Carvalho; Eduardo Viviani; Cecche Lintz; Rosa Cristina

    2016-01-01

    Ceramic companies worldwide produce large amounts of polishing tile waste, which are piled up in the open air or disposed of in landfills. These wastes have such characteristics that make them potential substitutes for cement and sand in the manufacturing of concrete products. This paper investigates the use of ceramic tile polishing waste as a partial substitute for cement and sand in the manufacturer of concrete paving blocks. A concrete mix design was defined and then the sand was replaced...

  10. Borel hierarchies in infinite products of Polish spaces

    Indian Academy of Sciences (India)

    with two product topologies: (i) the product of copies of the Polish topology on X, so that H is again a Polish space and (ii) the product of copies of the discrete topology on X. Define now the Borel hierarchy in the larger topology on H. To do so, we need some notation. An element of H will be denoted by h = (x1,x2,...,xn,.

  11. Polish Standard of the Technical Safety of Transmission Gas Pipelines

    International Nuclear Information System (INIS)

    Tkacz, A.J.

    2006-01-01

    The document is presenting the idea of the CNGI Norm called The Polish Standard of the Technical Safety of Transmission Gas Pipelines and the way of using it by companies associated in the Chamber of the Natural Gas Industry in the business activity. It will be applied to improve the quality and reliability of gas transmission after full opening of Polish natural gas market. (author)

  12. IDENTITY AND NEGOTIATION OF BOUNDARIES AMONG YOUNG POLISH JEWS

    OpenAIRE

    Cukras-Stelągowska, Joanna

    2015-01-01

    In this chapter, I would like to look at the processes of building the cultural identity of the young generation of Polish Jews, primarily including the models of constructing modern identifications with the Polish society, the Jewish people and the State of Israel. I will present the results of my own studies, and of those conducted by a few other young researchers dealing with these issues. My main theoretical sources are within the interpretive paradigm. The research methodology was based ...

  13. Relationship between sensory attributes and volatile compounds of polish dry-cured loin

    Science.gov (United States)

    Górska, Ewa; Nowicka, Katarzyna; Jaworska, Danuta; Przybylski, Wiesław; Tambor, Krzysztof

    2017-01-01

    Objective The aim of this work was to determine the relationship between objective sensory descriptors and volatile flavour compound composition of Polish traditional dry-cured loin. Methods The volatile compounds were investigated by using solid phase microextraction (SPME) and gas chromatography–mass spectrometry (GC–MS). For sensory assessment, the quantitative descriptive analysis (QDA) method was used. Results A total of 50 volatile compounds were found and assigned to 17 chemical families. Most of the detected volatile compounds derived from smoking, lipid oxidative reactions and seasoning (46.8%, 21.7%, and 18.9%, respectively). The dominant compounds were: aromatic hydrocarbon (toluene); alkanes (hexane, heptane, and 2,2,4-trimethylpentane); aldehyde (hexanal); alcohol (2-furanmethanol); ketone (3-hydroxy-2-butanone); phenol (guaiacol); and terpenes (eucalyptol, cymene, γ-terpinen, and limonene). Correlation analysis showed that some compounds derived from smoking were positively correlated with the intensity of cured meat odour and flavour and negatively with the intensity of dried meat odour and flavour, while terpenes were strongly correlated with odour and flavour of added spices. Conclusion The analysed dry-cured loins were characterized by specific and unique sensory profile. Odour and flavour of studied loins was mainly determined by volatile compounds originating from smoking, seasoning and lipid oxidation. Obtained results suggest that smoking process is a crucial stage during Polish traditional dry-cured loins production. PMID:27456422

  14. Relationship between sensory attributes and volatile compounds of polish dry-cured loin

    Directory of Open Access Journals (Sweden)

    Ewa Górska

    2017-05-01

    Full Text Available Objective The aim of this work was to determine the relationship between objective sensory descriptors and volatile flavour compound composition of Polish traditional dry-cured loin. Methods The volatile compounds were investigated by using solid phase microextraction (SPME and gas chromatography–mass spectrometry (GC–MS. For sensory assessment, the quantitative descriptive analysis (QDA method was used. Results A total of 50 volatile compounds were found and assigned to 17 chemical families. Most of the detected volatile compounds derived from smoking, lipid oxidative reactions and seasoning (46.8%, 21.7%, and 18.9%, respectively. The dominant compounds were: aromatic hydrocarbon (toluene; alkanes (hexane, heptane, and 2,2,4-trimethylpentane; aldehyde (hexanal; alcohol (2-furanmethanol; ketone (3-hydroxy-2-butanone; phenol (guaiacol; and terpenes (eucalyptol, cymene, γ-terpinen, and limonene. Correlation analysis showed that some compounds derived from smoking were positively correlated with the intensity of cured meat odour and flavour and negatively with the intensity of dried meat odour and flavour, while terpenes were strongly correlated with odour and flavour of added spices. Conclusion The analysed dry-cured loins were characterized by specific and unique sensory profile. Odour and flavour of studied loins was mainly determined by volatile compounds originating from smoking, seasoning and lipid oxidation. Obtained results suggest that smoking process is a crucial stage during Polish traditional dry-cured loins production.

  15. Study of Profile Changes during Mechanical Polishing using Relocation Profilometry

    Science.gov (United States)

    Kumaran, S. Chidambara; Shunmugam, M. S.

    2017-10-01

    Mechanical polishing is a finishing process practiced conventionally to enhance quality of surface. Surface finish is improved by mechanical cutting action of abrasive particles on work surface. Polishing is complex in nature and research efforts have been focused on understanding the polishing mechanism. Study of changes in profile is a useful method of understanding behavior of the polishing process. Such a study requires tracing same profile at regular process intervals, which is a tedious job. An innovative relocation technique is followed in the present work to study profile changes during mechanical polishing of austenitic stainless steel specimen. Using special locating fixture, micro-indentation mark and cross-correlation technique, the same profile is traced at certain process intervals. Comparison of different parameters of profiles shows the manner in which metal removal takes place in the polishing process. Mass removal during process estimated by the same relocation technique is checked with that obtained using weight measurement. The proposed approach can be extended to other micro/nano finishing processes and favorable process conditions can be identified.

  16. Polish Adaptation of Wrist Evaluation Questionnaires.

    Science.gov (United States)

    Czarnecki, Piotr; Wawrzyniak-Bielęda, Anna; Romanowski, Leszek

    2015-01-01

    Questionnaires evaluating hand and wrist function are a very useful tool allowing for objective and systematic recording of symptoms reported by the patients. Most questionnaires generally accepted in clinical practice are available in English and need to be appropriately adapted in translation and undergo subsequent validation before they can be used in another culture and language. The process of translation of the questionnaires was based on the generally accepted guidelines of the International Quality of Life Assessment Project (IQOLA). First, the questionnaires were translated from English into Polish by two independent translators. Then, a joint version of the translation was prepared collectively and translated back into English. Each stage was followed by a written report. The translated questionnaires were then evaluated by a group of patients. We selected 31 patients with wrist problems and asked them to complete the PRWE, Mayo, Michigan and DASH questionnaires twice at intervals of 3-10 days. The results were submitted for statistical analysis. We found a statistically significant (pquestionnaires. A comparison of the PRWE and Mayo questionnaires with the DASH questionnaire also showed a statistically significant correlation (pquestionnaires was successful and that the questionnaires may be used in clinical practice.

  17. Automated visual inspection for polished stone manufacture

    Science.gov (United States)

    Smith, Melvyn L.; Smith, Lyndon N.

    2003-05-01

    Increased globalisation of the ornamental stone market has lead to increased competition and more rigorous product quality requirements. As such, there are strong motivators to introduce new, more effective, inspection technologies that will help enable stone processors to reduce costs, improve quality and improve productivity. Natural stone surfaces may contain a mixture of complex two-dimensional (2D) patterns and three-dimensional (3D) features. The challenge in terms of automated inspection is to develop systems able to reliably identify 3D topographic defects, either naturally occurring or resulting from polishing, in the presence of concomitant complex 2D stochastic colour patterns. The resulting real-time analysis of the defects may be used in adaptive process control, in order to avoid the wasteful production of defective product. An innovative approach, using structured light and based upon an adaptation of the photometric stereo method, has been pioneered and developed at UWE to isolate and characterize mixed 2D and 3D surface features. The method is able to undertake tasks considered beyond the capabilities of existing surface inspection techniques. The approach has been successfully applied to real stone samples, and a selection of experimental results is presented.

  18. Personality of Polish gay men and women

    Directory of Open Access Journals (Sweden)

    Marcin Kwiatkowski

    2015-12-01

    Full Text Available Background Sexuality is a part of one’s identity and personality that is shaped under the influence of biological and environmental factors and interactions with society. The results of research conducted so far and concerning the personality traits of gay men and women are not consistent, and only a small number of them concern the Polish population. Hence the objective of the present research was to provide personality profiles of men and women with different sexual orientations. Participants and procedure The participants (N = 346 included 84 gay women, 82 gay men, 95 heterosexual women and 85 heterosexual men. The following measures were used: a survey developed by the author, the Kinsey Scale, the EPQ-R (Eysenck Personality Questionnaire Revised adapted by Brzozowski and Drwal (1995, and the Sixteen-factor Personality Questionnaire of Cattell adapted by Nowakowska (1970. Results The results support the hypothesis that gay women and heterosexual men share similar personality traits, while gay men have more diverse traits, similar to the traits typical for heterosexual women and men. In particular, personalities of gay men are described by such traits as progressive attitude, independence, or willingness to take risks, which means traits linked to factor Q1. The highest values of that factor are observable in the case of gay men, as compared to gay women, and also in comparison with heterosexual men and women. Conclusions Sexual orientation is responsible for differences in personality traits of the studied group to a greater extent than their biological sex.

  19. Thermodynamical motivation of the Polish energy policy

    Directory of Open Access Journals (Sweden)

    Ziębik Andrzej

    2013-02-01

    Full Text Available Basing on the first and second law of thermodynamics the fundamental trends in the Polish energy policy are analysed, including the aspects of environmental protection. The thermodynamical improvement of real processes (reduction of exergy losses is the main way leading to an improvement of the effectivity of energy consumption. If the exergy loss is economically not justified, we have to do with an error from the viewpoint of the second law analysis. The paper contains a thermodynamical analysis of the ratio of final and primary energy, as well as the analysis of the thermo-ecological cost and index of sustainable development concerning primary energy. Analyses of thermo-ecological costs concerning electricity and centralized heat production have been also carried out. The effect of increasing the share of high-efficiency cogeneration has been analyzed, too. Attention has been paid to an improved efficiency of the transmission and distribution of electricity, which is of special importance from the viewpoint of the second law analysis. The improvement of the energy effectivity in industry was analyzed on the example of physical recuperation, being of special importance from the point of view of exergy analysis.

  20. Polish university as an (unattractive potential employer

    Directory of Open Access Journals (Sweden)

    Baruk, Agnieszka Izabela

    2017-12-01

    Full Text Available The article presents issues associated with the reasons for the fact that young potential employees are not interested in starting work at Polish universities. The article is theoretical-empirical in character. The theoretical part highlights the importance of a situation in which an entity is regarded as an attractive employer, which allows attracting the best employees. Particular attention is paid to the fact that a university needs to build its image as an employer, which results from its characteristics. The article strives to achieve three research goals, among others, identifying the reasons why respondents are not interested in starting work at a university and arranging these reasons hierarchically. Two research hypotheses were subject to preliminary verification: H1 – the main reason for the unwillingness to start work at a university are financial aspects; H2 – the main reason for the unwillingness to start work at a university are the aspects of prestige. The data collected in course of primary research were subject to quantitative analysis based on the method of average assessment analysis and the method of factor analysis. Their results show that the respondents were not interested in work at a university mainly because they wanted to test the knowledge and skills acquired during studies in other branches. At the same time, the aspects of finances and prestige didn’t play a major role. Thus, in case of the surveyed sample of respondents both research hypotheses have to be recognized as untrue.

  1. Mercury emissions from polish pulverized coalfired boiler

    Directory of Open Access Journals (Sweden)

    Wichliński Michał

    2017-01-01

    Full Text Available The current paper presents the research results carried out at one of Polish power plants at a pulverized hard coal-fired 225 MW unit. The research was carried out at full load of the boiler (100% MCR and focused on analysis of mercury content in the input fuel and limestone sorbent for wet flue gas desulfurization (FGD system, as well as investigation of mercury content in the combustion products, i.e. fly ash, slag, FGD product (gypsum and FGD effluents (waste. Within the framework of the present study the concentration of mercury vapor in the exhaust gas was also investigated. The analysis was performed using Lumex RA-915+ spectrometer with an attachment (RP-91C. The measurements were carried out at three locations, i.e. before the electrostatic precipitator (ESP, downstream the ESP, and downstream the wet FGD plant. Design of the measurement system allowed to determine both forms of mercury in the flue gas (Hg0 and Hg2+ at all measurement locations.Based on the measurement results the balance of mercury for a pulverized coal (PC boiler was calculated and the amount of mercury was assessed both in the input solids (fuel and sorbent, as well as the gaseous and solids products (flue gas, slag, ash, gypsum and FGD waste.

  2. Marketing Globalisation – Polish Market Experience

    Directory of Open Access Journals (Sweden)

    Robert Nowacki

    2007-09-01

    Full Text Available The beginning of the 21st century has been yielded with an acceleration of transformations occurring in economies of the whole world. These changes relate to all the areas of economic life functioning. The most important manifestation thereof is a reinforcement of competitive phenomena. Among the most important reasons for such a state of affairs, there is mentioned globalisation. The course of its processes forces the organisation operating in the market to undertake adaptive actions. One of them is reorientation of marketing activities. The need to modify the previous marketing concepts results, first of all, from far reaching alterations in the sphere of consumption, just triggered by globalisationís impact. These trends are noticed in all the markets, also in the Polish one. The foreign enterprises operating in it more and more often use the concept of global marketing. This makes us to have reflection on what is the real effectiveness of such actions and what are the possibilities to form oneís competitive position owing to that. The article constitutes an attempt to provide answers to these questions.

  3. Study on chemical mechanical polishing of silicon wafer with megasonic vibration assisted.

    Science.gov (United States)

    Zhai, Ke; He, Qing; Li, Liang; Ren, Yi

    2017-09-01

    Chemical mechanical polishing (CMP) is the primary method to realize the global planarization of silicon wafer. In order to improve this process, a novel method which combined megasonic vibration to assist chemical mechanical polishing (MA-CMP) is developed in this paper. A matching layer structure of polishing head was calculated and designed. Silicon wafers are polished by megasonic assisted chemical mechanical polishing and traditional chemical mechanical polishing respectively, both coarse polishing and precision polishing experiments were carried out. With the use of megasonic vibration, the surface roughness values Ra reduced from 22.260nm to 17.835nm in coarse polishing, and the material removal rate increased by approximately 15-25% for megasonic assisted chemical mechanical polishing relative to traditional chemical mechanical polishing. Average Surface roughness values Ra reduced from 0.509nm to 0.387nm in precision polishing. The results show that megasonic assisted chemical mechanical polishing is a feasible method to improve polishing efficiency and surface quality. The material removal and finishing mechanisms of megasonic vibration assisted polishing are investigated too. Copyright © 2017 Elsevier B.V. All rights reserved.

  4. Wafer-scale synthesis of monolayer and few-layer MoS2 via thermal vapor sulfurization

    Science.gov (United States)

    Robertson, John; Liu, Xue; Yue, Chunlei; Escarra, Matthew; Wei, Jiang

    2017-12-01

    Monolayer molybdenum disulfide (MoS2) is an atomically thin, direct bandgap semiconductor crystal potentially capable of miniaturizing optoelectronic devices to an atomic scale. However, the development of 2D MoS2-based optoelectronic devices depends upon the existence of a high optical quality and large-area monolayer MoS2 synthesis technique. To address this need, we present a thermal vapor sulfurization (TVS) technique that uses powder MoS2 as a sulfur vapor source. The technique reduces and stabilizes the flow of sulfur vapor, enabling monolayer wafer-scale MoS2 growth. MoS2 thickness is also controlled with great precision; we demonstrate the ability to synthesize MoS2 sheets between 1 and 4 layers thick, while also showing the ability to create films with average thickness intermediate between integer layer numbers. The films exhibit wafer-scale coverage and uniformity, with electrical quality varying depending on the final thickness of the grown MoS2. The direct bandgap of grown monolayer MoS2 is analyzed using internal and external photoluminescence quantum efficiency. The photoluminescence quantum efficiency is shown to be competitive with untreated exfoliated MoS2 monolayer crystals. The ability to consistently grow wafer-scale monolayer MoS2 with high optical quality makes this technique a valuable tool for the development of 2D optoelectronic devices such as photovoltaics, detectors, and light emitters.

  5. Charge-Transfer-Induced p-Type Channel in MoS2 Flake Field Effect Transistors.

    Science.gov (United States)

    Min, Sung-Wook; Yoon, Minho; Yang, Sung Jin; Ko, Kyeong Rok; Im, Seongil

    2018-01-31

    The two-dimensional transition-metal dichalcogenide semiconductor MoS 2 has received extensive attention for decades because of its outstanding electrical and mechanical properties for next-generation devices. One weakness of MoS 2 , however, is that it shows only n-type conduction, revealing its limitations for homogeneous PN diodes and complementary inverters. Here, we introduce a charge-transfer method to modify the conduction property of MoS 2 from n- to p-type. We initially deposited an n-type InGaZnO (IGZO) film on top of the MoS 2 flake so that electron charges might be transferred from MoS 2 to IGZO during air ambient annealing. As a result, electron charges were depleted in MoS 2 . Such charge depletion lowered the MoS 2 Fermi level, which makes hole conduction favorable in MoS 2 when optimum source/drain electrodes with a high work function are selected. Our IGZO-supported MoS 2 flake field effect transistors (FETs) clearly display channel-type conversion from n- to p-channel in this way. Under short- and long-annealing conditions, n- and p-channel MoS 2 FETs are achieved, respectively, and a low-voltage complementary inverter is demonstrated using both channels in a single MoS 2 flake.

  6. Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application

    DEFF Research Database (Denmark)

    Yang, Xiaonian; Li, Qiang; Hu, Guofeng

    2016-01-01

    . Monolayer MoS2 so far can be obtained by mechanical exfoliation or chemical vapor deposition (CVD). However, controllable synthesis of large area monolayer MoS2 with high quality needs to be improved and their growth mechanism requires more studies. Here we report a systematical study on controlled...... synthesis of high-quality monolayer MoS2 single crystals using low pressure CVD. Large-size monolayer MoS2 triangles with an edge length up to 405 mu m were successfully synthesized. The Raman and photoluminescence spectroscopy studies indicate high homogenous optical characteristic of the synthesized...... monolayer MoS2 triangles. The transmission electron microscopy results demonstrate that monolayer MoS2 triangles are single crystals. The back-gated field effect transistors (FETs) fabricated using the as-grown monolayer MoS2 show typical n-type semiconductor behaviors with carrier mobility up to 21.8 cm(2...

  7. Ultra-broadband nonlinear saturable absorption of high-yield MoS2 nanosheets

    Science.gov (United States)

    Wei, Rongfei; Zhang, Hang; Hu, Zhongliang; Qiao, Tian; He, Xin; Guo, Qiangbing; Tian, Xiangling; Chen, Zhi; Qiu, Jianrong

    2016-07-01

    High-yield MoS2 nanosheets with strong nonlinear optical (NLO) responses in a broad near-infrared range were synthesized by a facile hydrothermal method. The observation of saturable absorption, which was excited by the light with photon energy smaller than the gap energy of MoS2, can be attributed to the enhancement of the hybridization between the Mo d-orbital and S p-orbital by the oxygen incorporation into MoS2. High-yield MoS2 nanosheets with high modulation depth and large saturable intensity generated a stable, passively Q-switched fiber laser pulse at 1.56 μm. The high output power of 1.08 mW can be attained under a very low pump power of 30.87 mW. Compared to recently reported passively Q-switched fiber lasers utilizing exfoliated MoS2 nanosheets, the efficiency of the laser for our passive Q-switching operation is larger and reaches 3.50%. This research may extend the understanding on the NLO properties of MoS2 and indicate the feasibility of the high-yield MoS2 nanosheets to passively Q-switched fiber laser effectively at low pump strengths.

  8. Enhanced photoresponse characteristics of transistors using CVD-grown MoS2/WS2 heterostructures

    Science.gov (United States)

    Shan, Junjie; Li, Jinhua; Chu, Xueying; Xu, Mingze; Jin, Fangjun; Fang, Xuan; Wei, Zhipeng; Wang, Xiaohua

    2018-06-01

    Semiconductor heterostructures based on transition metal dichalcogenides provide a broad platform to research two-dimensional nanomaterials and design atomically thin devices for fundamental and applied interests. The MoS2/WS2 heterostructure was prepared on SiO2/Si substrate by chemical vapor deposition (CVD) in our research. And the optical properties of the heterostructure was characterized by Raman and photoluminescence (PL) spectroscopy. The similar 2 orders of magnitude decrease of PL intensity in MoS2/WS2 heterostructures was tested, which is attribute to the electrical and optical modulation effects are connected with the interfacial charge transfer between MoS2 and WS2 films. Using MoS2/WS2 heterostructure as channel material of the phototransistor, we demonstrated over 50 folds enhanced photoresponsivity of multilayer MoS2 field-effect transistor. The results indicate that the MoS2/WS2 films can be a promising heterostructure material to enhance the photoresponse characteristics of MoS2-based phototransistors.

  9. Hydrothermal synthesis of 2D MoS 2 nanosheets for electrocatalytic hydrogen evolution reaction

    KAUST Repository

    Muralikrishna, S.

    2015-10-20

    Nanostructured molybdenum disulfide (MoS) is a very promising catalyst for producing molecular hydrogen by electrochemical methods. Herein, we have designed and synthesized highly electocatalytically active 2D MoS nanosheets (NS) from molybdenum trioxide (MoO) by a facile hydrothermal method and have compared their electrocatalytic activities for hydrogen evolution reaction (HER). The electrochemical characterization was performed using linear sweep voltammetry (LSV) in acidic medium. The MoS NS show a HER onset potential at about 80 mV vs. reversible hydrogen electrode (RHE) which is much lower than MoO (300 mV). The MoS NS and MoO show a current density of 25 mA cm and 0.3 mA cm, respectively at an overpotential of 280 mV vs. RHE. The MoS NS showed an 83 times higher current density when compared to MoO. The Tafel slopes of the MoS NS and MoO were about 90 mV per dec and 110 mV per dec respectively. This suggests that MoS NS are a better electrocatalyst when compared to MoO and follow the Volmer-Heyrovsky mechanism for HER.

  10. Hydrothermal synthesis of 2D MoS 2 nanosheets for electrocatalytic hydrogen evolution reaction

    KAUST Repository

    Muralikrishna, S.; Manjunath, K.; Samrat, D.; Reddy, Viswanath; Ramakrishnappa, T.; Nagaraju, Doddahalli H.

    2015-01-01

    Nanostructured molybdenum disulfide (MoS) is a very promising catalyst for producing molecular hydrogen by electrochemical methods. Herein, we have designed and synthesized highly electocatalytically active 2D MoS nanosheets (NS) from molybdenum trioxide (MoO) by a facile hydrothermal method and have compared their electrocatalytic activities for hydrogen evolution reaction (HER). The electrochemical characterization was performed using linear sweep voltammetry (LSV) in acidic medium. The MoS NS show a HER onset potential at about 80 mV vs. reversible hydrogen electrode (RHE) which is much lower than MoO (300 mV). The MoS NS and MoO show a current density of 25 mA cm and 0.3 mA cm, respectively at an overpotential of 280 mV vs. RHE. The MoS NS showed an 83 times higher current density when compared to MoO. The Tafel slopes of the MoS NS and MoO were about 90 mV per dec and 110 mV per dec respectively. This suggests that MoS NS are a better electrocatalyst when compared to MoO and follow the Volmer-Heyrovsky mechanism for HER.

  11. MoS2 @HKUST-1 Flower-Like Nanohybrids for Efficient Hydrogen Evolution Reactions.

    Science.gov (United States)

    Wang, Chengli; Su, Yingchun; Zhao, Xiaole; Tong, Shanshan; Han, Xiaojun

    2018-01-24

    A novel MoS 2 -based flower-like nanohybrid for hydrogen evolution was fabricated through coating the Cu-containing metal-organic framework (HKUST-1) onto MoS 2 nanosheets. It is the first time that MoS 2 @HKUST-1 nanohybrids have been reported for the enhanced electrochemical performance of HER. The morphologies and components of the MoS 2 @HKUST-1 flower-like nanohybrids were characterized by scanning electron microscopy, X-ray diffraction analysis and Fourier transform infrared spectroscopy. Compared with pure MoS 2 , the MoS 2 @HKUST-1 hybrids exhibit enhanced performance on hydrogen evolution reaction with an onset potential of -99 mV, a smaller Tafel slope of 69 mV dec -1 , and a Faradaic efficiency of nearly 100 %. The MoS 2 @HKUST-1 flower-like nanohybrids exhibit excellent stability in acidic media. This design opens new possibilities to effectively synthesize non-noble metal catalysts with high performance for the hydrogen evolution reaction (HER). © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Unravelling merging behaviors and electrostatic properties of CVD-grown monolayer MoS2 domains

    International Nuclear Information System (INIS)

    Hao, Song; Yang, Bingchu; Gao, Yongli

    2016-01-01

    The presence of grain boundaries is inevitable for chemical vapor deposition (CVD)-grown MoS 2 domains owing to various merging behaviors, which greatly limits its potential applications in novel electronic and optoelectronic devices. It is therefore of great significance to unravel the merging behaviors of the synthesized polygon shape MoS 2 domains. Here we provide systematic investigations of merging behaviors and electrostatic properties of CVD-grown polycrystalline MoS 2 crystals by multiple means. Morphological results exhibit various polygon shape features, ascribed to polycrystalline crystals merged with triangle shape MoS 2 single crystals. The thickness of triangle and polygon shape MoS 2 crystals is identical manifested by Raman intensity and peak position mappings. Three merging behaviors are proposed to illustrate the formation mechanisms of observed various polygon shaped MoS 2 crystals. The combined photoemission electron microscopy and kelvin probe force microscopy results reveal that the surface potential of perfect merged crystals is identical, which has an important implication for fabricating MoS 2 -based devices.

  13. Adsorption of DNA/RNA nucleobases onto single-layer MoS2 and Li-Doped MoS2: A dispersion-corrected DFT study

    Science.gov (United States)

    Sadeghi, Meisam; Jahanshahi, Mohsen; Ghorbanzadeh, Morteza; Najafpour, Ghasem

    2018-03-01

    The kind of sensing platform in nano biosensor plays an important role in nucleic acid sequence detection. It has been demonstrated that graphene does not have an intrinsic band gap; therefore, transition metal dichalcogenides (TMDs) are desirable materials for electronic base detection. In the present work, a comparative study of the adsorption of the DNA/RNA nucleobases [Adenine (A), Cytosine (C) Guanine (G), Thymine (T) and Uracil (U)] onto the single-layer molybdenum disulfide (MoS2) and Li-doped MoS2 (Li-MoS2) as a sensing surfaces was investigated by using Dispersion-corrected Density Functional Theory (D-DFT) calculations and different measure of equilibrium distances, charge transfers and binding energies for the various nucleobases were calculated. The results revealed that the interactions between the nucleobases and the MoS2 can be strongly enhanced by introducing metal atom, due to significant charge transfer from the Li atom to the MoS2 when Lithium is placed on top of the MoS2. Furthermore, the binding energies of the five nucleobases were in the range of -0.734 to -0.816 eV for MoS2 and -1.47 to -1.80 eV for the Li-MoS2. Also, nucleobases were adsorbed onto MoS2 sheets via the van der Waals (vdW) force. This high affinity and the renewable properties of the biosensing platform demonstrated that Li-MoS2 nanosheet is biocompatible and suitable for nucleic acid analysis.

  14. The Polish Mother on the defensive? The transformation of the myth and its impact on the motherhood of Polish women

    Directory of Open Access Journals (Sweden)

    Agnieszka Imbierowicz

    2012-06-01

    Full Text Available The subject of this presentation is the attempt to define and to present the origins, socio-cultural content and the evolution of The Polish Mother myth, present in the polish national consciousness. The author tries to show how this myth was born, what functions it fulfilled and what forms it took in the changing historical and social reality, from the moment of loss of independence, through a period of real socialism, until the present day. The impact of this myth in the lives of real women and their motherhood is taken into consideration. Then, the author comparing the results of the latest polish sociological researches on the family and its transformation, and transformation of value systems together with theories about the specifics of life in the period of postmodernity, wonders whether it’s time to deconstruct the myth of The Polish Mother, because it does not fit the conditions of today’s world, which is characterized, above all, by the apotheosis of individuality, self-realization and freedom, or perhaps in polish society there is still strong traditionalism in thinking about motherhood, and the myth of The Polish Mother is still alive?

  15. Effects of laser polishing on surface microstructure and corrosion resistance of additive manufactured CoCr alloys

    Science.gov (United States)

    Wang, W. J.; Yung, K. C.; Choy, H. S.; Xiao, T. Y.; Cai, Z. X.

    2018-06-01

    Laser polishing of 3D printed metal components has drawn great interest in view of its potential applications in the dental implant industries. In this study, corrosion resistance, surface composition and crystalline structure of CoCr alloys were investigated. The corrosion resistance, micromorphology, composition, phase transformations and crystalline structures of samples were characterized using an electrochemical analyzer, scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD) and transmission electron microscope (TEM), respectively. The results indicate that high laser powers and low object distances within a certain range can facilitate the formation of complex oxide films, which exhibits high corrosion resistance. Further, object distances have a significant influence on cooling rates during the solidification of the melt pool in laser polishing, and fast cooling generates vast amounts of vacancies and defects, which result in the crystalline phase transformation from γ to ε. Consequently, the formed oxides play an important role in corrosion resistance on the outer layer, and inner layer with γ phase also helps keep the CoCr alloys in a stable structure with high resistant to corrosion. The two process parameters in laser polishing, laser power and object distances, are demonstrated as being important for controlling the surface microstructures and corrosion resistance of the additive manufactured CoCr alloy components.

  16. Generation lifetime investigation of ion-damage gettered silicon using MOS structure

    International Nuclear Information System (INIS)

    Nassibian, A.G.; Browne, V.A.; Perkins, K.D.

    1976-01-01

    Gettering of undesirable generation impurities by O and Ar implant damage layer has been investigated by transient response of MOS capacitors. One-half of each Si wafer was masked against the implanting ion beam and comparison was made between the two halves of each wafer by deducing the generation lifetime from the C-t measurements. The implant dosage was 10 16 cm -2 and ion energy 200 keV. The gettering anneal at 1070 0 C was also the gate oxidation. The generation lifetime from 1 to 15 μs of the control half was increased to as high as 200 μs after both O and Ar implants. The results with O were more reproducible than with the Ar-implanted Si wafers; however, the largest increase in generation lifetime was observed with the Ar getterered wafer. It is proposed that there are generation centers other than the generation impurity centers that cannot be removed by gettering methods

  17. On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

    Science.gov (United States)

    Acurio, E.; Crupi, F.; Magnone, P.; Trojman, L.; Meneghesso, G.; Iucolano, F.

    2017-06-01

    This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recessed-gate AlGaN/GaN MOS-HEMT. A positive stress voltage to the gate results in positive threshold voltage shift (ΔVth), which is attributed to the trapping of electrons from the GaN layer into the pre-existing oxide traps. The trapping rate exhibits a universal decreasing behavior as a function of the number of filled traps, independently of stress time, stress voltage, stress temperature, and device-to-device variability. The stress-induced ΔVth can be fully recovered by applying a small negative voltage, which causes the electron de-trapping. In the explored time window (between 1 s and thousands of s), the recovery dynamics is well described by the superimposition of two exponential functions associated with two different traps. Both trap time constants are independent of the stress voltage, decrease with temperature and increase with the recovery voltage. The activation energy of the slower trap is 0.93 eV, while the faster trap exhibits an activation energy with a large spread in the range between 0.45 eV and 0.82 eV.

  18. Superior Generalization Capability of Hardware-Learing Algorithm Developed for Self-Learning Neuron-MOS Neural Networks

    Science.gov (United States)

    Kondo, Shuhei; Shibata, Tadashi; Ohmi, Tadahiro

    1995-02-01

    We have investigated the learning performance of the hardware backpropagation (HBP) algorithm, a hardware-oriented learning algorithm developed for the self-learning architecture of neural networks constructed using neuron MOS (metal-oxide-semiconductor) transistors. The solution to finding a mirror symmetry axis in a 4×4 binary pixel array was tested by computer simulation based on the HBP algorithm. Despite the inherent restrictions imposed on the hardware-learning algorithm, HBP exhibits equivalent learning performance to that of the original backpropagation (BP) algorithm when all the pertinent parameters are optimized. Very importantly, we have found that HBP has a superior generalization capability over BP; namely, HBP exhibits higher performance in solving problems that the network has not yet learnt.

  19. Supercapacitive properties of hydrothermally synthesized sphere like MoS2 nanostructures

    International Nuclear Information System (INIS)

    Krishnamoorthy, Karthikeyan; Veerasubramani, Ganesh Kumar; Radhakrishnan, Sivaprakasam; Kim, Sang Jae

    2014-01-01

    Highlights: • MoS 2 nanostructures were synthesized by hydrothermal method. • Randomly stacked MoS 2 was obtained. • FE-SEM studies show the sphere like morphology of MoS 2 . • Specific capacitance of 92.85 F/g was achieved using charge–discharge analysis. • MoS 2 electrode shows capacitance retention of about 93.8% after 1000 cycles. - Abstract: In this communication, we have investigated the supercapacitive behaviour of MoS 2 nanostructures prepared by a facile one-pot hydrothermal approach using ammonium heptamolybdate and thiourea as starting materials. The X-ray diffraction study revealed the formation of randomly stacked layers of MoS 2 . The field-emission scanning electron microscope studies suggested the formation of sphere like MoS 2 nanostructures and a plausible mechanism for the formation of the obtained structure is discussed. The cyclic voltammetry study shows the typical rectangular shaped curves with a specific capacitance of 106 F/g at a scan rate of 5 mV/s. Galvanostatic charge–discharge measurements suggested the maximum specific capacitance of about 92.85 F/g at discharge current density of 0.5 mA/cm 2 . Cyclic stability tests revealed the capacitance retention of about 93.8% after 1000 cycles suggesting a good cyclic capacity of the prepared MoS 2 . The electrochemical impedance spectroscopic results such as Nyquist and Bode phase angle plots suggested that the hydrothermally synthesized MoS 2 nanostructures will be a suitable candidate for electrochemical supercapacitor applications

  20. Characterisation and stabilisation of the surface region of a highly polished silicon crystal sphere

    International Nuclear Information System (INIS)

    Kenny, M.J.; Wielunski, L.S.

    1999-01-01

    Full text: Typically a single crystal silicon wafer has a native oxide layer a few nm thick which changes slowly with time. A number of parameters such as hydrocarbons, water vapour, storage environment can affect this layer. The thickness of the layer is also orientation dependent. In the case of a silicon sphere the situation becomes more complex, because all orientations are present and the process of polishing involves a higher pressure and also high local temperatures. A highly polished single crystal sphere 93.6 mm in diameter is being used to determine the Avogadro constant with an uncertainty of ≤ 1 x 10 -8 . This will then be used to obtain an atomic definition of the kilogram. The composition and structure of the surface oxide layer play an important role in this measurement. Firstly the density of the oxide layer is different from that of silicon. Secondly since the diameter is measured by optical interferometry, corrections must be applied for the phase change in the reflected light beam due to the surface layer. Thirdly the orientation dependence of the layer complicated the corrections to be applied. Fourthly if measurements are made over a period of time, any changes in the surface layer must be taken into account. Given the accuracy required in the determination, the surface layer is a determining factor in the final result. A number of techniques such as spectroscopic ellipsometry and ion beam analysis are being used to study the composition and structure of the surface of a silicon sphere. Cleaning techniques such as HF and low temperature ultraviolet (ozone) are being developed to produce a clean surface. The next step involves deposition of a stable and uniform surface oxide layer a few nm thick. Techniques being investigated for this include ultra violet ozone deposition at 450 deg C and plasma deposition. The paper describes work at the NML in achieving an appropriate stable surface on the silicon sphere

  1. Adsorption studies of alcohol molecules on monolayer MoS_2 nanosheet—A first-principles insights

    International Nuclear Information System (INIS)

    Nagarajan, V.; Chandiramouli, R.

    2017-01-01

    Highlights: • The adsorption of methanol, ethanol & 1-propanol on MoS_2 nanosheet are studied. • The PDOS & band structure confirms adsorption of alcohol vapors on MoS_2 nanosheet. • The adsorption of 1-propanol vapor on MoS_2 nanosheet is more favorable. • The alcohol molecules adsorption on MoS_2 nanosheet is explored in atomistic level. - Abstract: The electronic and adsorption properties of three different alcohol molecules namely methanol, ethanol and 1-propanol vapors on MoS_2 nanosheet is investigated using DFT method. The structural stability of MoS_2 nanosheet is ascertained with formation energy. The adsorption properties of alcohol molecules on MoS_2 base material is discussed in terms of average energy gap variation, Mulliken charge transfer, energy band gap and adsorption energy. The prominent adsorption sites of methanol, ethanol and 1-propanol vapors on MoS_2 nanosheet are studied in atomistic level. The projected density of states (PDOS) spectrum gives the clear insights on the electronic properties of MoS_2 nanosheet. The PDOS and energy band structure confirmed the adsorption of alcohol vapors on MoS_2 nanosheet. The variation in the band structure and PDOS is noticed upon adsorption of methanol, ethanol and 1-propanol molecules on MoS_2 nanosheet. The PDOS spectrum also reveals the variation in peak maxima owing to transfer of electron between alcohol molecules and MoS_2 base material. The adsorption of 1-propanol vapor on MoS_2 nanosheet is observed to be more favorable than other alcohol molecules. The findings confirm that monolayer MoS_2 nanosheet can be used to detect the presence of alcohol vapors in the environment.

  2. Effects of oxide traps, interface traps, and ''border traps'' on metal-oxide-semiconductor devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Reber, R.A. Jr.; Meisenheimer, T.L.; Schwank, J.R.; Shaneyfelt, M.R.; Riewe, L.C.

    1993-01-01

    We have identified several features of the 1/f noise and radiation response of metal-oxide-semiconductor (MOS) devices that are difficult to explain with standard defect models. To address this issue, and in response to ambiguities in the literature, we have developed a revised nomenclature for defects in MOS devices that clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. In this nomenclature, ''oxide traps'' are simply defects in the SiO 2 layer of the MOS structure, and ''interface traps'' are defects at the Si/SiO 2 interface. Nothing is presumed about how either type of defect communicates with the underlying Si. Electrically, ''fixed states'' are defined as trap levels that do not communicate with the Si on the time scale of the measurements, but ''switching states'' can exchange charge with the Si. Fixed states presumably are oxide traps in most types of measurements, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e., ''border traps'' [D. M. Fleetwood, IEEE Trans. Nucl. Sci. NS-39, 269 (1992)]. The effective density of border traps depends on the time scale and bias conditions of the measurements. We show the revised nomenclature can provide focus to discussions of the buildup and annealing of radiation-induced charge in non-radiation-hardened MOS transistors, and to changes in the 1/f noise of MOS devices through irradiation and elevated-temperature annealing

  3. Computer-Controlled Cylindrical Polishing Process for Development of Grazing Incidence Optics for Hard X-Ray Region

    Science.gov (United States)

    Khan, Gufran Sayeed; Gubarev, Mikhail; Speegle, Chet; Ramsey, Brian

    2010-01-01

    The presentation includes grazing incidence X-ray optics, motivation and challenges, mid spatial frequency generation in cylindrical polishing, design considerations for polishing lap, simulation studies and experimental results, future scope, and summary. Topics include current status of replication optics technology, cylindrical polishing process using large size polishing lap, non-conformance of polishin lap to the optics, development of software and polishing machine, deterministic prediction of polishing, polishing experiment under optimum conditions, and polishing experiment based on known error profile. Future plans include determination of non-uniformity in the polishing lap compliance, development of a polishing sequence based on a known error profile of the specimen, software for generating a mandrel polishing sequence, design an development of a flexible polishing lap, and computer controlled localized polishing process.

  4. Investigation of the optical properties of MoS2 thin films using spectroscopic ellipsometry

    International Nuclear Information System (INIS)

    Yim, Chanyoung; O'Brien, Maria; Winters, Sinéad; McEvoy, Niall; Mirza, Inam; Lunney, James G.; Duesberg, Georg S.

    2014-01-01

    Spectroscopic ellipsometry (SE) characterization of layered transition metal dichalcogenide (TMD) thin films grown by vapor phase sulfurization is reported. By developing an optical dispersion model, the extinction coefficient and refractive index, as well as the thickness of molybdenum disulfide (MoS 2 ) films, were extracted. In addition, the optical band gap was obtained from SE and showed a clear dependence on the MoS 2 film thickness, with thinner films having a larger band gap energy. These results are consistent with theory and observations made on MoS 2 flakes prepared by exfoliation, showing the viability of vapor phase derived TMDs for optical applications

  5. Simulación y modelado de transistores MOS de doble puerta

    OpenAIRE

    Cartujo Cassinello, Pedro

    2013-01-01

    En este trabajo se hace un estudio del transistor MOS de doble puerta analizando las posibles ventajas de esta nueva estructura frene al transistor convencional y el transistor MOS SOI de puerta simple. Para ello se ha analizado una sección transversal de un transistor MOS de doble puerta de canal N, con el fin de examinar detalladamente las peculiaridades de la distribución de electrones con una amplia variedad de valores de todos los parámentros tecnológicos y condiciones de operación, y se...

  6. Simulaci??n y modelado de transistores MOS de doble puerta

    OpenAIRE

    Cartujo Cassinello, Pedro

    2000-01-01

    En este trabajo se hace un estudio del transistor MOS de doble puerta analizando las posibles ventajas de esta nueva estructura frene al transistor convencional y el transistor MOS SOI de puerta simple. Para ello se ha analizado una secci??n transversal de un transistor MOS de doble puerta de canal N, con el fin de examinar detalladamente las peculiaridades de la distribuci??n de electrones con una amplia variedad de valores de todos los par??mentros tecnol??gicos y condiciones de operaci??n,...

  7. Synthesis of coaxial nanotubes of MoS2 and carbon

    International Nuclear Information System (INIS)

    Reza, C.; Perez, M.; Santiago, P.

    2002-01-01

    The di chalcogenides WS 2 and MoS 2 by their tubular properties were combined. It was synthesized coaxial structures of MoS 2 with C with the purpose to studying the possible structural changes of the MoS 2 nano tubes at was submitted to a propylene gas flux as carbon precursor in a thermal treatment. Studies of structural characterization by Transmission Electron Microscopy (Tem) were realized. The theoretical simulation of the structure was realized using an algorithm type multilayer. The possibility of the nano tubes are applied to gas storage as can be the hydrogen arouse interest by the energy production. (Author)

  8. Germanium content in Polish hard coals

    Directory of Open Access Journals (Sweden)

    Makowska Dorota

    2016-01-01

    Full Text Available Due to the policy of the European Union, it is necessary to search for new sources of scarce raw materials. One of these materials is germanium, listed as a critical element. This semi-metal is widely used in the electronics industry, for example in the production of semiconductors, fibre optics and solar cells. Coal and fly ash from its combustion and gasification for a long time have been considered as a potential source of many critical elements, particularly germanium. The paper presents the results of germanium content determination in the Polish hard coal. 23 coal samples of various coal ranks were analysed. The samples were collected from 15 mines of the Upper Silesian Coal Basin and from one mine of the Lublin Coal Basin. The determination of germanium content was performed with the use of Atomic Absorption Spectrometry with Electrothermal Atomization (GFAAS. The investigation showed that germanium content in the analysed samples was at least twice lower than the average content of this element in the hard coals analysed so far and was in the range of 0.08 ÷ 1.28 mg/kg. Moreover, the content of Ge in the ashes from the studied coals does not exceed 15 mg/kg, which is lower than the average value of Ge content in the coal ashes. The highest content of this element characterizes coals of the Lublin Coal Basin and young coals type 31 from the Vistula region. The results indicate a low utility of the analysed coal ashes as a source of the recovery of germanium. On the basis of the analyses, the lack of the relationship between the content of the element and the ash content in the tested coals was noted. For coals of the Upper Silesian Coal Basin, the relationship between the content of germanium in the ashes and the depth of the seam was observed.

  9. The study of optimization on process parameters of high-accuracy computerized numerical control polishing

    Science.gov (United States)

    Huang, Wei-Ren; Huang, Shih-Pu; Tsai, Tsung-Yueh; Lin, Yi-Jyun; Yu, Zong-Ru; Kuo, Ching-Hsiang; Hsu, Wei-Yao; Young, Hong-Tsu

    2017-09-01

    Spherical lenses lead to forming spherical aberration and reduced optical performance. Consequently, in practice optical system shall apply a combination of spherical lenses for aberration correction. Thus, the volume of the optical system increased. In modern optical systems, aspherical lenses have been widely used because of their high optical performance with less optical components. However, aspherical surfaces cannot be fabricated by traditional full aperture polishing process due to their varying curvature. Sub-aperture computer numerical control (CNC) polishing is adopted for aspherical surface fabrication in recent years. By using CNC polishing process, mid-spatial frequency (MSF) error is normally accompanied during this process. And the MSF surface texture of optics decreases the optical performance for high precision optical system, especially for short-wavelength applications. Based on a bonnet polishing CNC machine, this study focuses on the relationship between MSF surface texture and CNC polishing parameters, which include feed rate, head speed, track spacing and path direction. The power spectral density (PSD) analysis is used to judge the MSF level caused by those polishing parameters. The test results show that controlling the removal depth of single polishing path, through the feed rate, and without same direction polishing path for higher total removal depth can efficiently reduce the MSF error. To verify the optical polishing parameters, we divided a correction polishing process to several polishing runs with different direction polishing paths. Compare to one shot polishing run, multi-direction path polishing plan could produce better surface quality on the optics.

  10. Procedure for the ion implantation of MOS elements

    International Nuclear Information System (INIS)

    Gessner, T.; Vetter, E.; Tolonics, J.

    1986-01-01

    The ion implantation procedure is applied to the doping of MOS elements. The invention guarantees a homogeneous doping in the dose range from 10 10 to 10 12 ions/cm 2 without additional installations of mechanical orifices in high-current implantation devices. The ion source parameters like cathode heating current, pressure at the ion source, extraction and acceleration voltages correspond to the dose range (10 10 to 10 12 ions/cm 2 ) for single charged ions of the doping agent. Double or triple charged ions generated at the ion source have been separated mass-analytically, accelerated and scanned. Ion densities below 100 nA/cm 2 have been obtained

  11. Word Frequency Analysis. MOS: 51C. Skill Levels 1 & 2.

    Science.gov (United States)

    1981-05-01

    FF-TCR1NG I RESTS 2 RESULT I RESJLTS I VETA I NS 3 it 0Up N I R~vERS-1L. I F E VtS ZNG I PEVELVIKG MOS WORDo LISTINGASCENDIIG SECUEME C.ATE 93259 t39...1 0 J CACCUPULATEG 1 J fiCID I * ?L4CoS 1 j & T.CrC$S 2 0 J tAnJUSTASLE I J rC.Ff ER 8 J E .11:-COflOITIOING 5 *J CALL 1 0 J LALLOM I J (A~LLOW~S 4 *J...ALCMj 3 *J &:.L" VS 1 0 3 12 0 j ...’Jo I *J W Git Z I ., 1 4 J fNVIL I ’ . lUV I J E C.PPEAJRS I I J E .*,PL! CATION 2 2 C. PPLY I 3 C.;PPPtovEo a 3

  12. The multi-camera optical surveillance system (MOS)

    International Nuclear Information System (INIS)

    Otto, P.; Wagner, H.; Richter, B.; Gaertner, K.J.; Laszlo, G.; Neumann, G.

    1991-01-01

    The transition from film camera to video surveillance systems, in particular the implementation of high capacity multi-camera video systems, results in a large increase in the amount of recorded scenes. Consequently, there is a substantial increase in the manpower requirements for review. Moreover, modern microprocessor controlled equipment facilitates the collection of additional data associated with each scene. Both the scene and the annotated information have to be evaluated by the inspector. The design of video surveillance systems for safeguards necessarily has to account for both appropriate recording and reviewing techniques. An aspect of principal importance is that the video information is stored on tape. Under the German Support Programme to the Agency a technical concept has been developed which aims at optimizing the capabilities of a multi-camera optical surveillance (MOS) system including the reviewing technique. This concept is presented in the following paper including a discussion of reviewing and reliability

  13. First-principles analysis of MoS2/Ti2C and MoS2/Ti2CY2 (Y=F and OH) all-2D semiconductor/metal contacts

    KAUST Repository

    Gan, Liyong

    2013-06-13

    First-principles calculations are used to explore the geometry, bonding, and electronic properties of MoS2/Ti2C and MoS2/Ti2CY2 (Y = F and OH) semiconductor/metal contacts. The structure of the interfaces is determined. Strong chemical bonds formed at the MoS2/Ti2C interface result in additional states next to the Fermi level, which extend over the three atomic layers of MoS2 and induce a metallic character. The interaction in MoS2/Ti2CY2, on the other hand, is weak and not sensitive to the specific geometry, and the semiconducting nature thus is preserved. The energy level alignment implies weak and strong n-type doping of MoS2 in MoS2/Ti2CF2 and MoS2/Ti2C(OH)2, respectively. The corresponding n-type Schottky barrier heights are 0.85 and 0.26 eV. We show that the MoS2/Ti2CF2 interface is close to the Schottky limit. At the MoS2/Ti2C(OH)2 interface, we find that a strong dipole due to charge rearrangement induces the Schottky barrier. The present interfaces are well suited for application in all-two-dimensional devices.

  14. First-principles analysis of MoS2/Ti2C and MoS2/Ti2CY2 (Y=F and OH) all-2D semiconductor/metal contacts

    KAUST Repository

    Gan, Liyong; Huang, Dan; Schwingenschlö gl, Udo; Zhao, Yu-Jun

    2013-01-01

    First-principles calculations are used to explore the geometry, bonding, and electronic properties of MoS2/Ti2C and MoS2/Ti2CY2 (Y = F and OH) semiconductor/metal contacts. The structure of the interfaces is determined. Strong chemical bonds formed at the MoS2/Ti2C interface result in additional states next to the Fermi level, which extend over the three atomic layers of MoS2 and induce a metallic character. The interaction in MoS2/Ti2CY2, on the other hand, is weak and not sensitive to the specific geometry, and the semiconducting nature thus is preserved. The energy level alignment implies weak and strong n-type doping of MoS2 in MoS2/Ti2CF2 and MoS2/Ti2C(OH)2, respectively. The corresponding n-type Schottky barrier heights are 0.85 and 0.26 eV. We show that the MoS2/Ti2CF2 interface is close to the Schottky limit. At the MoS2/Ti2C(OH)2 interface, we find that a strong dipole due to charge rearrangement induces the Schottky barrier. The present interfaces are well suited for application in all-two-dimensional devices.

  15. Infestation of Polish Agricultural Soils by Plasmodiophora Brassicae Along The Polish-Ukrainian Border

    Directory of Open Access Journals (Sweden)

    Jędryczka Małgorzata

    2014-07-01

    Full Text Available There has been a rapid, worldwide increase in oilseed rape production that has resulted in enormous intensification of oilseed rape cultivation, leading to tight rotations. This in turn, has caused an accumulation of pests as well as foliar and soil-borne diseases. Recently, clubroot has become one of the biggest concerns of oilseed rape growers. Clubroot is caused by the soil-borne protist Plasmodiophora brassicae Woronin. The pathogen may be present in groundwater, lakes, and irrigation water used in sprinkling systems. It can be easily transmitted from one field to another not only by water, but also by soil particles and dust transmitted by wind and on machinery. The aim of our overall study was to check for P. brassicae infestation of Polish agricultural soils. This paper presents the 2012 results of a study performed along the Polish-Ukrainian border in two provinces: Lublin (Lubelskie Voivodeship and the Carpathian Foothills (Podkarpackie Voivodeship, in south-east Poland. Monitoring was done in 11 counties, including nine rural and two municipal ones. In total, 40 samples were collected, out of which 36 were collected from fields located in rural areas and four from municipal areas, with two per municipal region. Each sample was collected at 8-10 sites per field, using a soil auger. The biotest to detect the presence of P. brassicae was done under greenhouse conditions using seedlings of the susceptible Brassicas: B. rapa ssp. pekinensis and the Polish variety of oilseed rape B. napus cv. Monolit. Susceptible plants grown in heavily infested soils produced galls on their roots. A county was regarded as free from the pathogen, if none of the bait plants became infected. The pathogen was found in three out of 40 fields monitored (7.5% in the Carpathian Foothill region. The fields were located in two rural counties. The pathogen was not found in Lublin province, and was also not detected in any of the municipal counties. The detection with

  16. Sensory factors affecting female consumers' acceptability of nail polish.

    Science.gov (United States)

    Sun, C; Koppel, K; Adhikari, K

    2015-12-01

    The objectives of this study were to determine what sensory factors impact consumers' acceptability of nail polishes, to explore how these sensory factors impact consumers' acceptability of nail polishes, to investigate whether there are any consumer segments according to their overall acceptability on different nail polishes and to scrutinize how the consumer segments are related to the sensory factors. Ninety-eight females participated in a nail polish consumer study at Kansas State University. Eight commercial products belonging to four categories - regular (REG), gel (GEL), flake (FLK) and water-based (WAT) - were evaluated. Each nail polish sample was evaluated twice by each participant in two different tasks - a task devoted to applying and evaluating the product and a task devoted to observing the appearance and evaluating the product. Pearson's correlation analysis, analysis of variance (ANOVA), external preference mapping, cluster analysis and internal preference mapping were applied for data analysis. Participants' scores of overall liking of the nail polishes were similar in the application task and in the observation task. In general, participants liked the REG and GEL product samples more than the FLK and WAT samples. Among all the sensory attributes, appearance attributes were the major factors that affected participants' overall liking. Aroma seemed to be a minor factor to participants' overall liking. Some sensory attributes, such as runny, shininess, opacity, spreadability, smoothness, coverage and wet appearance, were found to drive participants' overall acceptability positively, whereas others such as pinhole, fatty-edges, blister, brushlines, pearl-like, flake-protrusion, glittery and initial-drag impacted participants' overall acceptability negatively. Four clusters of participants were identified according to their overall liking scores from both the application task and the observation task. Participants' acceptability, based on different

  17. Experimental Study on Abrasive Waterjet Polishing of Hydraulic Turbine Blades

    International Nuclear Information System (INIS)

    Khakpour, H; Birglenl, L; Tahan, A; Paquet, F

    2014-01-01

    In this paper, an experimental investigation is implemented on the abrasive waterjet polishing technique to evaluate its capability in polishing of surfaces and edges of hydraulic turbine blades. For this, the properties of this method are studied and the main parameters affecting its performance are determined. Then, an experimental test-rig is designed, manufactured and tested to be used in this study. This test-rig can be used to polish linear and planar areas on the surface of the desired workpieces. Considering the number of parameters and their levels, the Taguchi method is used to design the preliminary experiments. All experiments are then implemented according to the Taguchi L 18 orthogonal array. The signal-to-noise ratios obtained from the results of these experiments are used to determine the importance of the controlled polishing parameters on the final quality of the polished surface. The evaluations on these ratios reveal that the nozzle angle and the nozzle diameter have the most important impact on the results. The outcomes of these experiments can be used as a basis to design a more precise set of experiments in which the optimal values of each parameter can be estimated

  18. The social shaping of innovation in polish companies

    DEFF Research Database (Denmark)

    Lorentzen, Anne

    2003-01-01

    The paper deals with strategies of innovation in Polish manufacturing companies. The point of departure is a theoretical framework of enterprise level innovation, and of the factors forming strategies of innovation on enterprise level. The paper analyses evidence from 23 Polish companies and pres......The paper deals with strategies of innovation in Polish manufacturing companies. The point of departure is a theoretical framework of enterprise level innovation, and of the factors forming strategies of innovation on enterprise level. The paper analyses evidence from 23 Polish companies...... and presents two cases more in detail. The analysis shows that the Polish companies have all been quite innovative, mostly in relation to product innovation. They choose innovation strategies, which are incremental more than radical, and they tend to differentiate their product range rather than to specialise....... They consider quality development a must in the fight for market shares and they adapt equipment and organisation to this goal. The factors forming and determining the strategies of the companies count the technological knowledge and expertise of the owner/founder, the structural changes of the market...

  19. [Adhesion of oral microorganisms on dental porcelain polished and glazed].

    Science.gov (United States)

    Wang, Yi-ning; Wen, Guo-jiang; Shi, Bin; Pan, Xin-hua

    2003-09-01

    This study compared the roughness of porcelain polished or glazed surfaces and the adhesion of oral streptococcus mutans to them in vitro. 30 porcelain samples were made. Porcelain samples in group A were polished with diamond paste. Porcelain samples were glazed in group B and were polished with Al2O3 (240#) bur in group C. Their roughness values were measured by profilometer. Standardized cell suspensions were incubated with test samples for one hour at 37 degrees C, then retained cells were counted by image analysis (percentage area of a microscopic field covered by cells). Roughness values of group A, B, C were respectively (0.1987 +/- 0.057) microm, (0.1990 +/- 0.091) microm, (0.4260 +/- 0.174) microm. There was no significantly difference between group A and group B. The roughness samples in group C were significantly rougher than that in the other groups. The amount of retained cells in group A, group B, group C was respectively (15.92 +/- 4.37)%, (16.39 +/- 6.31)% and (41.48 +/- 12.1)%. There was no significant difference between the cell adhesion on porcelain surface glazed and polished, but more bacteria adhered on the porcelain surface in group C. Porcelain surface polished treatment was clinically acceptable compared with its glazed. They all exhibited the least amount of bacteria adhesion. The more porcelain surface was rough, the more bacteria adhered on it.

  20. Initial polishing time affects gloss retention in resin composites.

    Science.gov (United States)

    Waheeb, Nehal; Silikas, Nick; Watts, David

    2012-10-01

    To determine the effect of finishing and polishing time on the surface gloss of various resin-composites before and after simulated toothbrushing. Eight representative resin-composites (Ceram X mono, Ceram X duo, Tetric EvoCeram, Venus Diamond, EsteliteSigma Quick, Esthet.X HD, Filtek Supreme XT and Spectrum TPH) were used to prepare 80 disc-shaped (12 mm x 2 mm) specimens. The two step system Venus Supra was used for polishing the specimens for 3 minutes (Group A) and 10 minutes (Group B). All specimens were subjected to 16,000 cycles of simulated toothbrushing. The surface gloss was measured after polishing and after brushing using the gloss meter. Results were evaluated using one way ANOVA, two ways ANOVA and Dennett's post hoc test (P = 0.05). Group B (10-minute polishing) resulted in higher gloss values (GV) for all specimens compared to Group A (3 minutes). Also Group B showed better gloss retention compared to Group A after simulated toothbrushing. In each group, there was a significant difference between the polished composite resins (P gloss after the simulated toothbrushing.

  1. Electrical parameters of silicon on sapphire; influence on aluminium gate MOS devices performances

    International Nuclear Information System (INIS)

    Suat, J.P.; Borel, J.

    1976-01-01

    The question is the quality level of the substrate obtained with MOS technologies on silicon on an insulating substrate. Experimental results are presented on the main electrical parameters of MOS transistors made on silicon on sapphire, e.g. mean values and spreads of: threhold voltage and surface mobilities of transistors, breakdown voltages, and leakage currents of diodes. These devices have been made in three different technologies: enhancement P. channel technology, depletion-enhancement P. channel technology, and complementary MOS technology. These technologies are all aluminium gate processes with standard design rules and 5μm channel length. Measurements show that presently available silicon on sapphire can be considered as a very suitable substrate for many MOS digital applications (but not for dynamic circuits) [fr

  2. Analysis of Quantum Effects in Non-Uniformly Doped MOS Structures

    National Research Council Canada - National Science Library

    Fiegna, Claudio

    1997-01-01

    This paper presents results from the self-consistent solution of Schrodinger and Poisson equations obtained in one-dimensional non-uniformly doped MOS structures suitable for the fabrication of very short transistors...

  3. Quantum transport through MoS2 constrictions defined by photodoping

    Science.gov (United States)

    Epping, Alexander; Banszerus, Luca; Güttinger, Johannes; Krückeberg, Luisa; Watanabe, Kenji; Taniguchi, Takashi; Hassler, Fabian; Beschoten, Bernd; Stampfer, Christoph

    2018-05-01

    We present a device scheme to explore mesoscopic transport through molybdenum disulfide (MoS2) constrictions using photodoping. The devices are based on van-der-Waals heterostructures where few-layer MoS2 flakes are partially encapsulated by hexagonal boron nitride (hBN) and covered by a few-layer graphene flake to fabricate electrical contacts. Since the as-fabricated devices are insulating at low temperatures, we use photo-induced remote doping in the hBN substrate to create free charge carriers in the MoS2 layer. On top of the device, we place additional metal structures, which define the shape of the constriction and act as shadow masks during photodoping of the underlying MoS2/hBN heterostructure. Low temperature two- and four-terminal transport measurements show evidence of quantum confinement effects.

  4. An ab initio study of hydrotreating of thiirene and thiirane on MoS 3 ...

    African Journals Online (AJOL)

    The catalytic site used is based on molybdenum disulfide (MoS2), which is considered ... Two steps characterise the desulfurization process: the adsorption and the ... catalytic site and molecules obtained in previous works in the EHT method.

  5. Role of interlayer coupling in ultra thin MoS2

    KAUST Repository

    Cheng, Yingchun; Zhu, Zhiyong; Schwingenschlö gl, Udo

    2012-01-01

    The effects of interlayer coupling on the vibrational and electronic properties of ultra thin MoS 2 were studied by ab initio calculations. For smaller slab thickness, the interlayer distance is significantly elongated because of reduced interlayer

  6. Study of solid lubrication with MoS2 coating in the presence of ...

    Indian Academy of Sciences (India)

    Molybdenum disulphide (MoS2) based solid lubricant mixtures con- taining zirconia and ... age during relative movement and to reduce friction and wear. ..... In this hexagonal structure the bonds between the carbon atoms in a layer are strong.

  7. Interlocking Friction Governs the Mechanical Fracture of Bilayer MoS2.

    Science.gov (United States)

    Jung, Gang Seob; Wang, Shanshan; Qin, Zhao; Martin-Martinez, Francisco J; Warner, Jamie H; Buehler, Markus J

    2018-04-24

    A molybdenum disulfide (MoS 2 ) layered system is a two-dimensional (2D) material, which is expected to provide the next generation of electronic devices together with graphene and other 2D materials. Due to its significance for future electronics applications, gaining a deep insight into the fundamental mechanisms upon MoS 2 fracture is crucial to prevent mechanical failure toward reliable applications. Here, we report direct experimental observation and atomic modeling of the complex failure behaviors of bilayer MoS 2 originating from highly variable interlayer frictions, elucidated with in situ transmission electron microscopy and large-scale reactive molecular dynamics simulations. Our results provide a systematic understanding of the effects that different stacking and loading conditions have on the failure mechanisms and crack-tip behaviors in the bilayer MoS 2 systems. Our findings unveil essential properties in fracture of this 2D material and provide mechanistic insight into its mechanical failure.

  8. ''Normal'' tissues from humans exposed to radium contain an alteration in the c-mos locus

    International Nuclear Information System (INIS)

    Huberman, E.; Schlenker, R.A.; Hardwick, J.P.

    1989-01-01

    The structures of a number of human proto-oncogenes from persons with internal systemic exposure to radium were analyzed by restriction enzyme digestion and southern blotting of their DNA. Two extra c-mos Eco R1 restriction-fragment-length bands of 5.0 kb and 5.5 kb were found in tissue DNA from six of seven individuals. The extra c-mos bands were detected in DNA from many, but not all, of the tissues of the individuals exposed to radium. Our results suggest that the c-mos restriction-fragment-length alterations (RFLA) found in individuals exposed to radium were induced rather than inherited, are epigenetic in origin, and most likely result from changes in the methylation of bases surrounding the single exon of the c-mos proto-oncogene. 7 refs., 3 figs., 2 tabs

  9. Performance of an area variable MOS varicap weighted programmable CCD transversal filter

    OpenAIRE

    Bhattacharyya, A.B.; Shankarnarayan, L.; Kapur, N.; Wallinga, Hans

    1981-01-01

    The performance of an electrically programmable CCD transversal filter (PTF) is presented in which tap-weight multiplication is performed by a novel and compact on chip voltage controlled area variable MOS varicap.

  10. Strongly luminescent monolayered MoS2 prepared by effective ultrasound exfoliation.

    Science.gov (United States)

    Štengl, Václav; Henych, Jiří

    2013-04-21

    Intense ultrasound in a pressurized batch reactor was used for preparation of monolayered MoS2 nanosheets from natural mineral molybdenite. Exfoliation of bulk MoS2 using ultrasound is an attractive route to large-scale preparation of monolayered crystals. To evaluate the quality of delamination, methods like X-ray diffraction, Raman spectroscopy and microscopic techniques (TEM and AFM) were employed. From single- or few-layered products obtained from intense sonication, MoS2 quantum dots (MoSQDs) were prepared by a one-pot reaction by refluxing exfoliated nanosheets of MoS2 in ethylene glycol under atmospheric pressure. The synthesised MoSQDs were characterised by photoluminescence spectroscopy and laser-scattering particle size analysis. Our easy preparation leads to very strongly green luminescing quantum dots.

  11. Two-dimensional Si nanosheets with local hexagonal structure on a MoS(2) surface.

    Science.gov (United States)

    Chiappe, Daniele; Scalise, Emilio; Cinquanta, Eugenio; Grazianetti, Carlo; van den Broek, Bas; Fanciulli, Marco; Houssa, Michel; Molle, Alessandro

    2014-04-02

    The structural and electronic properties of a Si nanosheet (NS) grown onto a MoS2 substrate by means of molecular beam epitaxy are assessed. Epitaxially grown Si is shown to adapt to the trigonal prismatic surface lattice of MoS2 by forming two-dimensional nanodomains. The Si layer structure is distinguished from the underlying MoS2 surface structure. The local electronic properties of the Si nanosheet are dictated by the atomistic arrangement of the layer and unlike the MoS2 hosting substrate they are qualified by a gap-less density of states. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. The synthesis of hierarchical nanostructured MoS_2/Graphene composites with enhanced visible-light photo-degradation property

    International Nuclear Information System (INIS)

    Zhao, Yongjie; Zhang, Xiaowei; Wang, Chengzhi; Zhao, Yuzhen; Zhou, Heping; Li, Jingbo; Jin, HaiBo

    2017-01-01

    Graphical abstract: Introducing graphene layer into MoS_2 could construct the steady hierarchical structure which could efficiently separate the photo-induced electrons so as to enhance the photo- degradation behavior. - Highlights: • The MoS_2 and MoS_2/Graphene nanocomposite have been synthesized via a solvothermal process. • The scrolled nanosheets of MoS_2 combining with interconnected graphene network promoted the formation of steady hierarchical architecture. • Comparing with MoS_2, the hierarchical MoS_2/Graphene nanocomposite achieved relatively higher degradation rate. • The synergistic effect mechanism for excellent photo-degradation activity was proposed. - Abstract: Novel two-dimensional materials with a layered structure are of special interest for a variety of promising applications. Herein, MoS_2 and MoS_2/Graphene nanocomposite with hierarchical nanostructure were successfully synthesized employing a one-step hydrothermal method. Photo-degradation of methylene blue (MB) and rhodamine (RHB) were adopted to assess the photo-degradation ability of the products. Comparing with bare MoS_2, the hierarchical MoS_2/Graphene nanocomposite achieved relatively higher degradation rate of 99% in 28 min for MB as well in 50 min for RHB. These results verified that this proposed hierarchical nanocomposite is a good photo-degradation semiconductor. The excellent performance was mainly ascribed to the synergistic effect of MoS_2 and graphene layers. The MoS_2 possessing a band gap of 1.9 eV would provide abundant electron-hole pairs. The graphene layers with excellent electro-conductivity could realize the quick transport of electrons via its extended π-conjugation structure, consequently benefiting the separation of photo-generated carriers. These findings indicate that the graphene layer is a promising candidate as a co-catalyst for MoS_2 photo-catalyst, and also provide useful information for understanding the observed enhanced photocatalytic mechanism

  13. Electrical characteristics of multilayer MoS2 FET's with MoS2/graphene heterojunction contacts.

    Science.gov (United States)

    Kwak, Joon Young; Hwang, Jeonghyun; Calderon, Brian; Alsalman, Hussain; Munoz, Nini; Schutter, Brian; Spencer, Michael G

    2014-08-13

    The electrical properties of multilayer MoS2/graphene heterojunction transistors are investigated. Temperature-dependent I-V measurements indicate the concentration of unintentional donors in exfoliated MoS2 to be 3.57 × 10(11) cm(-2), while the ionized donor concentration is determined as 3.61 × 10(10) cm(-2). The temperature-dependent measurements also reveal two dominant donor levels, one at 0.27 eV below the conduction band and another located at 0.05 eV below the conduction band. The I-V characteristics are asymmetric with drain bias voltage and dependent on the junction used for the source or drain contact. I-V characteristics of the device are consistent with a long channel one-dimensional field-effect transistor model with Schottky contact. Utilizing devices, which have both graphene/MoS2 and Ti/MoS2 contacts, the Schottky barrier heights of both interfaces are measured. The charge transport mechanism in both junctions was determined to be either thermionic-field emission or field emission depending on bias voltage and temperature. On the basis of a thermionic field emission model, the barrier height at the graphene/MoS2 interface was determined to be 0.23 eV, while the barrier height at the Ti/MoS2 interface was 0.40 eV. The value of Ti/MoS2 barrier is higher than previously reported values, which did not include the effects of thermionic field emission.

  14. Exciton-dominant Electroluminescence from a Diode of Monolayer MoS2

    Science.gov (United States)

    2014-05-14

    injected electrons and holes, is a reliable technique to study exciton recombination processes in monolayer MoS2, including val- ley and spin excitation...temperature. After superimposing a white light scattering image of the de - vice, we find that the electroluminescence is localized at the edge of the...We find the emerged feature (labeled NX) peaks at 550 nm with energy of 2.255 eV. In low dimensional system, like monolayer MoS2, Coulomb interactions

  15. Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor

    KAUST Repository

    Lan, Yann Wen

    2016-09-05

    The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.

  16. Electron beam effects on VLSI MOS conditions for testing and reconfiguration

    International Nuclear Information System (INIS)

    Girard, P.; Roche, F.M.; Pistoulet, B.

    1986-01-01

    Wafer scale integrated-MOS circuits problems related to test and reconfiguration by electron beams are analyzed. First of all the alterations in characteristics of MOS circuits submitted to an electron beam testing are considered. Then the capabilities of reconfiguration by an electron beam bombardment are discussed. The various phenomena involved are reviewed. Experimental data are reported and discussed on the light of data of the literature. (Auth.)

  17. Exfoliated MoS2 nanosheets as efficient catalysts for electrochemical hydrogen evolution

    International Nuclear Information System (INIS)

    Ji, Shanshan; Yang, Zhe; Zhang, Chao; Liu, Zhenyan; Tjiu, Weng Weei; Phang, In Yee; Zhang, Zheng; Pan, Jisheng; Liu, Tianxi

    2013-01-01

    Graphical abstract: An efficient electrocatalyst for hydrogen evolution has been developed based on exfoliation of bulk MoS 2 crystals via a direct dispersion and ultrasonication method. Drop-casting method is used to fabricate the exfoliated MoS 2 nanosheets modified glass carbon electrode (E-MoS 2 /GCE) with various loadings. The E-MoS 2 /GCE with electrode loading of 48 μg cm −1 exhibits high catalytic activity for hydrogen evolution with a low overpotential (−0.12 V) and a high current density (1.26 mA cm −2 , at η = 150 mV). -- Highlights: • Two-dimensional MoS 2 nanosheets have been obtained by exfoliation of bulk MoS 2 crystals. • Exfoliated MoS 2 nanosheets show high electrocatalytic activity for H 2 production. • This study provides a new approach for renewable and economic H 2 production. -- Abstract: An efficient electrocatalyst for hydrogen evolution has been developed based on liquid exfoliation of bulk MoS 2 via a direct dispersion and ultrasonication method. Transmission electron microscopy and atomic force microscopy measurements show that the exfoliated MoS 2 consists of two-dimensional nanosheets. The exfoliated MoS 2 nanosheets modified glass carbon electrode (E-MoS 2 /GCE) with various loadings is fabricated via a drop-casting method. The electrocatalytic activity of E-MoS 2 /GCE toward hydrogen evolution reaction is examined using linear sweep voltammetry. It is shown that the E-MoS 2 /GCE with an electrode loading of 48 μg cm −2 exhibits a high catalytic activity for hydrogen evolution with a low overpotential (−0.12 V) and a high current density (1.26 mA cm −2 , at η = 150 mV)

  18. Development of MOS-FET based Marx generator with self-proved gate power

    International Nuclear Information System (INIS)

    Tokuchi, A.; Jiang, W.; Takayama, K.; Arai, T.; Kawakubo, T.; Adachi, T.

    2012-01-01

    New MOS-FET based Marx generator is described. An electric gate power for the MOS-FET is provided from the Marx main circuit itself. Four-stage Marx generator generates -12kV of the output voltage. The Marx Generator is successfully used to drive an Einzel lens chopper to generate a short pulsed ion beam for a KEK digital accelerator. (author)

  19. Electronic and magnetic properties of MoS2 nanoribbons with sulfur line vacancy defects

    International Nuclear Information System (INIS)

    Han, Yang; Zhou, Jian; Dong, Jinming

    2015-01-01

    Highlights: • We performed DFT calculations on Sulfur line defects embedded MoS 2 . • The defects induced bond strains are larger in the zigzag (ZZ) edge ones. • The ZZ ones are metals, having two degenerate ground states FM and AFM. • The armchair ones are nonmagnetic semiconductors. • The defects can induce some defect states in the electronic structures. - Abstract: Motivated by the recent experimental result that single sulfur vacancies in monolayer MoS 2 are mobile under the electron beam and easily agglomerate into the sulfur line vacancy defects [Physical Review B 88, 035301(2013)] , the structural, electronic and magnetic properties of one dimensional zigzag (ZZ) and armchair (AC) edge MoS 2 nanoribbons with single or double staggered sulfur line vacancy defects (hereafter, abbreviated as SV or DV, respectively), parallel to their edges, have been investigated systematically by density functional theory calculations. It is very interesting to find that the bond strains induced by the sulfur line vacancy defect can cause a much larger out-of plane distortions in the ZZ edge MoS 2 nanoribbon than in the AC edge counterpart. Besides, the defective ZZ edge MoS 2 nanoribbons with SV or DV are both metals, having their two respective degenerate ground states with the same energy, among which one is ferromagnetic (FM “ + +”) and the other is antiferromagnetic (AFM “ + −”). But the AC edge MoS 2 nanoribbons with SV or DV are both nonmagnetic semiconductors, having very different gap values. Finally, the sulfur line vacancy defects would induce some defect states in the electronic structures of the defective MoS 2 nanoribbons. All these important results could provide a new route of tuning the electronic properties of MoS 2 nanoribbons and its derivatives for their promising applications in nanoelectronics and optoelectronics

  20. Unexpected optical limiting properties from MoS2 nanosheets modified by a semiconductive polymer.

    Science.gov (United States)

    Zhao, Min; Chang, Meng-Jie; Wang, Qiang; Zhu, Zhen-Tong; Zhai, Xin-Ping; Zirak, Mohammad; Moshfegh, Alireza Z; Song, Ying-Lin; Zhang, Hao-Li

    2015-08-07

    Direct solvent exfoliation of bulk MoS2 with the assistance of poly(3-hexylthiophene) (P3HT) produces a novel two-dimensional organic/inorganic semiconductor hetero-junction. The obtained P3HT-MoS2 nanohybrid exhibits unexpected optical limiting properties in contrast to the saturated absorption behavior of both P3HT and MoS2, showing potential in future photoelectric applications.

  1. Improving the Stability of High-Performance Multilayer MoS2 Field-Effect Transistors.

    Science.gov (United States)

    Liu, Na; Baek, Jongyeol; Kim, Seung Min; Hong, Seongin; Hong, Young Ki; Kim, Yang Soo; Kim, Hyun-Suk; Kim, Sunkook; Park, Jozeph

    2017-12-13

    In this study, we propose a method for improving the stability of multilayer MoS 2 field-effect transistors (FETs) by O 2 plasma treatment and Al 2 O 3 passivation while sustaining the high performance of bulk MoS 2 FET. The MoS 2 FETs were exposed to O 2 plasma for 30 s before Al 2 O 3 encapsulation to achieve a relatively small hysteresis and high electrical performance. A MoO x layer formed during the plasma treatment was found between MoS 2 and the top passivation layer. The MoO x interlayer prevents the generation of excess electron carriers in the channel, owing to Al 2 O 3 passivation, thereby minimizing the shift in the threshold voltage (V th ) and increase of the off-current leakage. However, prolonged exposure of the MoS 2 surface to O 2 plasma (90 and 120 s) was found to introduce excess oxygen into the MoO x interlayer, leading to more pronounced hysteresis and a high off-current. The stable MoS 2 FETs were also subjected to gate-bias stress tests under different conditions. The MoS 2 transistors exhibited negligible decline in performance under positive bias stress, positive bias illumination stress, and negative bias stress, but large negative shifts in V th were observed under negative bias illumination stress, which is attributed to the presence of sulfur vacancies. This simple approach can be applied to other transition metal dichalcogenide materials to understand their FET properties and reliability, and the resulting high-performance hysteresis-free MoS 2 transistors are expected to open up new opportunities for the development of sophisticated electronic applications.

  2. Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

    KAUST Repository

    Lin, Chih-Pin

    2015-08-27

    We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.

  3. XPS, UV–vis spectroscopy and AFM studies on removal mechanisms of Si-face SiC wafer chemical mechanical polishing (CMP)

    International Nuclear Information System (INIS)

    Zhou, Yan; Pan, Guoshun; Shi, Xiaolei; Xu, Li; Zou, Chunli; Gong, Hua; Luo, Guihai

    2014-01-01

    Highlights: • CMP removal mechanism of Si-face SiC wafer is investigated through XPS analysis. • UV–vis spectroscopy is used to study CMP removal mechanisms. • CMP removal model of Si-face SiC wafer is proposed. • The variations of atomic step morphology on ultra-smooth surface via AFM is studied. - Abstract: Chemical mechanical polishing (CMP) removal mechanisms of on-axis Si-face SiC wafer have been investigated through X-ray photoelectron spectroscopy (XPS), UV–visible (UV–vis) spectroscopy and atomic force microscopy (AFM). XPS results indicate that silicon oxide is formed on Si-face surface polished by the slurry including oxidant H 2 O 2 , but not that after immersing in H 2 O 2 solution. UV–vis spectroscopy curves prove that • OH hydroxyl radical could be generated only under CMP polishing by the slurry including H 2 O 2 and abrasive, so as to promote oxidation of Si-face to realize the effective removal; meanwhile, alkali KOH during CMP could induce the production of more radicals to improve the removal. On the other side, ultra-smooth polished surface with atomic step structure morphology and extremely low Ra of about 0.06 nm (through AFM) is obtained using the developed slurry with silica nanoparticle abrasive. Through investigating the variations of the atomic step morphology on the surface polished by different slurries, it's reveals that CMP removal mechanism involves a simultaneous process of surface chemical reaction and nanoparticle atomic scale abrasion

  4. Research on Grinding and Polishing Force Control of Compliant Flange

    Directory of Open Access Journals (Sweden)

    Li Chuang

    2015-01-01

    Full Text Available The automation of the grinding and polishing process is important to improve the production efficiency of the part surfaces. In this paper, a new compliant flange mounted on the end of the industrial robots for the robotic grinding and polishing force control is developed. With regard to the non-linear and time-varying problem of the contact force, the mathematical model of the new force control system was presented and the fuzzy PID control strategy was used to drive the proposed system. Especially, the air spring and electric proportional valve is studied to establish the model. The simulation results show that the selected control strategy has quick response and good robustness, which satisfies the real-time requirements of the grinding and polishing force control in processing.

  5. [Polish medical ethics in the period 1945-1980].

    Science.gov (United States)

    Wichrowski, Marek

    2003-01-01

    The purpose of this article is o present that main currents of Polish medical ethics in the years 1945-1980, which the author treats as the 'prehistory' of Poland's contemporary bioethics. The author begins by ascertaining the post-war disappearance of two Polish traditions--that of the Warsaw school of philosopher-physicians (known in the West as the Polish School of Philosophy of Medicine) and the Lwów-Warsaw School of Philosophy. The political system that come into being after 1945 was not conducive to the development of medical ethics, but several clear orientations may be discerned in the utterances of physicians, lawyers, moral technologlans and academic philosophers. The analysis begins with Catholic ethics in its archaic 1950s-vintage form. The author then presents the thinking of ethicians Independent of both the Church and Marxism (the milieu of the journal 'Etyka') as well as the deontological writings of physicians.

  6. Condensate polishing guidelines for PWR and BWR plants

    International Nuclear Information System (INIS)

    Robbins, P.; Crinigan, P.; Graham, B.; Kohlmann, R.; Crosby, C.; Seager, J.; Bosold, R.; Gillen, J.; Kristensen, J.; McKeen, A.; Jones, V.; Sawochka, S.; Siegwarth, D.; Keeling, D.; Polidoroff, T.; Morgan, D.; Rickertsen, D.; Dyson, A.; Mills, W.; Coleman, L.

    1993-03-01

    Under EPRI sponsorship, an industry committee, similar in form and operation to other guideline committees, was created to develop Condensate Polishing Guidelines for both PWR and BWR systems. The committee reviewed the available utility and water treatment industry experience on system design and performance and incorporated operational and state-of-the-art information into document. These guidelines help utilities to optimize present condensate polisher designs as well as be a resource for retrofits or new construction. These guidelines present information that has not previously been presented in any consensus industry document. The committee generated guidelines that cover both deep bed and powdered resin systems as an integral part of the chemistry of PWR and BWR plants. The guidelines are separated into sections that deal with the basis for condensate polishing, system design, resin design and application, data management and performance and management responsibilities

  7. Development of clean chemical mechanical polishing systems; Clean CMP system

    Energy Technology Data Exchange (ETDEWEB)

    Tsujimura, M.; Hosokawa, M. [Ebara Corp., Tokyo (Japan)

    1998-10-20

    Described herein are clean chemical mechanical polishing (CMP) systems developed by Ebara. A CMP system needs advanced peripheral techniques, in addition to those for grinding adopted by the conventional system, in order to fully exhibit its inherent functions. An integrated design concept is essential for the CMP steps, including slurry supplying, polishing, washing, process controlling and waste fluid treatment. The Ebara has adopted a standard concept `Clean CMP, dry-in and dry-out of wafers,` and provided world`s highest grades of techniques for inter-layer insulating film, shallow trench isolation, plug and wiring. The head for the polishing module is specially designed by FEM, to improve homogeneity of wafers from the center to edges. The dresser is also specially designed, to improve pad surface topolody after dressing. A slurry dipsersing method is developed to reduce slurry consumption. Various washing modules, designed to have the same external shape, can be allocated to various functions. 10 figs.

  8. Photoelectrochemical-type sunlight photodetector based on MoS2/graphene heterostructure

    International Nuclear Information System (INIS)

    Huang, Zongyu; Han, Weijia; Chander, D Sathish; Qi, Xiang; Zhang, Han; Tang, Hongli; Ren, Long

    2015-01-01

    We have fabricated a novel sunlight photo-detector based on a MoS 2 /graphene heterostructure. The MoS 2 /graphene heterostructure was prepared by a facile hydrothermal method along with a subsequent annealing process followed by a substrate-induced high selective nucleation and growth mechanism. The microstructures and morphologies of the two-dimensional MoS 2 /graphene heterostructure can be experimentally confirmed by x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and a UV–vis absorption spectrometer. Photoresponse investigations performed by a photoelectrochemical (PEC) measurement system indicate that the synthesized MoS 2 /graphene heterostructure shows superior photoresponse activities under the illumination of sunlight in contrast with bare MoS 2 and graphene. The improved photoresponsivity can be attributed to the enhanced light absorption, strong light–matter interaction and the extremely efficient charge separation of the heterostructure. The structure and performances of the MoS 2 /graphene heterostructure suggest promising applications in the field of photonics and optoelectronics. (paper)

  9. MoS2 solid-lubricating film fabricated by atomic layer deposition on Si substrate

    Science.gov (United States)

    Huang, Yazhou; Liu, Lei; Lv, Jun; Yang, Junjie; Sha, Jingjie; Chen, Yunfei

    2018-04-01

    How to reduce friction for improving efficiency in the usage of energy is a constant challenge. Layered material like MoS2 has long been recognized as an effective surface lubricant. Due to low interfacial shear strengths, MoS2 is endowed with nominal frictional coefficient. In this work, MoS2 solid-lubricating film was directly grown by atomic layer deposition (ALD) on Si substrate using MoCl5 and H2S. Various methods were used to observe the grown MoS2 film. Moreover, nanotribological properties of the film were observed by an atomic force microscope (AFM). Results show that MoS2 film can effectively reduce the friction force by about 30-45% under different loads, indicating the huge application value of the film as a solid lubricant. Besides the interlayer-interfaces-sliding, the smaller capillary is another reason why the grown MoS2 film has smaller friction force than that of Si.

  10. Two-dimensional MoS2: A promising building block for biosensors.

    Science.gov (United States)

    Gan, Xiaorong; Zhao, Huimin; Quan, Xie

    2017-03-15

    Recently, two-dimensional (2D) layered nanomaterials have trigged intensive interest due to the intriguing physicochemical properties that stem from a quantum size effect connected with their ultra-thin structure. In particular, 2D molybdenum disulfide (MoS 2 ), as an emerging class of stable inorganic graphene analogs with intrinsic finite bandgap, would possibly complement or even surpass graphene in electronics and optoelectronics fields. In this review, we first discuss the historical development of ultrathin 2D nanomaterials. Then, we are concerned with 2D MoS 2 including its structure-property relationships, synthesis methods, characterization for the layer thickness, and biosensor applications over the past five years. Thereinto, we are highlighting recent advances in 2D MoS 2 -based biosensors, especially emphasize the preparation of sensing elements, roles of 2D MoS 2 , and assay strategies. Finally, on the basis of the current achievements on 2D MoS 2 and other ultrathin layered nanomaterials, perspectives on the challenges and opportunities for the exploration of 2D MoS 2 -based biosensors are put forward. Copyright © 2016 Elsevier B.V. All rights reserved.

  11. Synthesis of Monolayer MoS2 by Chemical Vapor Deposition

    Science.gov (United States)

    Withanage, Sajeevi; Lopez, Mike; Dumas, Kenneth; Jung, Yeonwoong; Khondaker, Saiful

    Finite and layer-tunable band gap of transition metal dichalcogenides (TMDs) including molybdenum disulfide (MoS2) are highlighted over the zero band gap graphene in various semiconductor applications. Weak interlayer Van der Waal bonding of bulk MoS2 allows to cleave few to single layer MoS2 using top-down methods such as mechanical and chemical exfoliation, however few micron size of these flakes limit MoS2 applications to fundamental research. Bottom-up approaches including the sulfurization of molybdenum (Mo) thin films and co-evaporation of Mo and sulfur precursors received the attention due to their potential to synthesize large area. We synthesized monolayer MoS2 on Si/SiO2 substrates by atmospheric pressure Chemical Vapor Deposition (CVD) methods using sulfur and molybdenum trioxide (MoO3) as precursors. Several growth conditions were tested including precursor amounts, growth temperature, growth time and flow rate. Raman, photoluminescence (PL) and atomic force microscopy (AFM) confirmed monolayer islands merging to create large area were observed with grain sizes up to 70 μm without using any seeds or seeding promoters. These studies provide in-depth knowledge to synthesize high quality large area MoS2 for prospective electronics applications.

  12. Doping effect on monolayer MoS2 for visible light dye degradation - A DFT study

    Science.gov (United States)

    Cheriyan, Silpa; Balamurgan, D.; Sriram, S.

    2018-04-01

    The electronic and optical properties of, Nitrogen (N), Cobalt (Co), and Co-N co-doped monolayers of MoS2 has been studied by using density functional theory (DFT) for visible light photocatalytic activity. From the calculations, it has been observed that the band gap of monolayer MoS2 has been reduced while doping. However, the band gaps of pristine and N doped MoS2 monolayers only falls in the visible region while for Co and Co-N co-doped systems, the band gap shifted to IR region. The optical calculation also confirms the results. The formation energy values of the doped system reaveal that MoS2 monolayer drops its stability while doping. To evaluate the photocatalytic response, band edge potentials of pristine and N-MoS2 are calculated, and the observed results show that compared to N-doped MoS2 monolayer, pure MoS2 is highly suitable for visible light photocatalytic dye degradation.

  13. Observation of Room-Temperature Magnetoresistance in Monolayer MoS2 by Ferromagnetic Gating.

    Science.gov (United States)

    Jie, Wenjing; Yang, Zhibin; Zhang, Fan; Bai, Gongxun; Leung, Chi Wah; Hao, Jianhua

    2017-07-25

    Room-temperature magnetoresistance (MR) effect is observed in heterostructures of wafer-scale MoS 2 layers and ferromagnetic dielectric CoFe 2 O 4 (CFO) thin films. Through the ferromagnetic gating, an MR ratio of -12.7% is experimentally achieved in monolayer MoS 2 under 90 kOe magnetic field at room temperature (RT). The observed MR ratio is much higher than that in previously reported nonmagnetic metal coupled with ferromagnetic insulator, which generally exhibited MR ratio of less than 1%. The enhanced MR is attributed to the spin accumulation at the heterostructure interface and spin injection to the MoS 2 layers by the strong spin-orbit coupling effect. The injected spin can contribute to the spin current and give rise to the MR by changing the resistance of MoS 2 layers. Furthermore, the MR effect decreases as the thickness of MoS 2 increases, and the MR ratio becomes negligible in MoS 2 with thickness more than 10 layers. Besides, it is interesting to find a magnetic field direction dependent spin Hall magnetoresistance that stems from a combination of the spin Hall and the inverse spin Hall effects. Our research provides an insight into exploring RT MR in monolayer materials, which should be helpful for developing ultrathin magnetic storage devices in the atomically thin limit.

  14. Development of hybrid fluid jet/float polishing process

    Science.gov (United States)

    Beaucamp, Anthony T. H.; Namba, Yoshiharu; Freeman, Richard R.

    2013-09-01

    On one hand, the "float polishing" process consists of a tin lap having many concentric grooves, cut from a flat by single point diamond turning. This lap is rotated above a hydrostatic bearing spindle of high rigidity, damping and rotational accuracy. The optical surface thus floats above a thin layer of abrasive particles. But whilst surface texture can be smoothed to ~0.1nm rms (as measured by atomic force microscopy), this process can only be used on flat surfaces. On the other hand, the CNC "fluid jet polishing" process consists of pumping a mixture of water and abrasive particles to a converging nozzle, thus generating a polishing spot that can be moved along a tool path with tight track spacing. But whilst tool path feed can be moderated to ultra-precisely correct form error on freeform optical surfaces, surface finish improvement is generally limited to ~1.5nm rms (with fine abrasives). This paper reports on the development of a novel finishing method, that combines the advantages of "fluid jet polishing" (i.e. freeform corrective capability) with "float polishing" (i.e. super-smooth surface finish of 0.1nm rms or less). To come up with this new "hybrid" method, computational fluid dynamic modeling of both processes in COMSOL is being used to characterize abrasion conditions and adapt the process parameters of experimental fluid jet polishing equipment, including: (1) geometrical shape of nozzle, (2) position relative to the surface, (3) control of inlet pressure. This new process is aimed at finishing of next generation X-Ray / Gamma Ray focusing optics.

  15. Barriers and Limitations of Mentoring in Polish Organizations

    Directory of Open Access Journals (Sweden)

    Joanna Mesjasz

    2013-09-01

    Full Text Available In Polish organizations one can recognize a lot of barriers in the mentoring implementation. According to the author, at the root of these barriers are hierarchies of values: social, national, organizational, and hierarchies of values represented by individual employees. The purpose of this article is to trace the sources of constraints in the mentoring implementation process. The analysis is carried out on several levels: from the broadest social perspective, through the national to the perspective of the organization. In the article, there are also presented actions that should be taken by Polish organizations to overcome barriers and constraints in the mentoring implementation process.

  16. Recurrent APC gene mutations in Polish FAP families

    Directory of Open Access Journals (Sweden)

    Pławski Andrzej

    2007-12-01

    Full Text Available Abstract The molecular diagnostics of genetically conditioned disorders is based on the identification of the mutations in the predisposing genes. Hereditary cancer disorders of the gastrointestinal tracts are caused by mutations of the tumour suppressor genes or the DNA repair genes. Occurrence of recurrent mutation allows improvement of molecular diagnostics. The mutation spectrum in the genes causing hereditary forms of colorectal cancers in the Polish population was previously described. In the present work an estimation of the frequency of the recurrent mutations of the APC gene was performed. Eight types of mutations occurred in 19.4% of our FAP families and these constitute 43% of all Polish diagnosed families.

  17. Implementation of the Bulgarian-Polish online dictionary

    Directory of Open Access Journals (Sweden)

    Ludmila Dimitrova

    2015-11-01

    Full Text Available Implementation of the Bulgarian-Polish online dictionary The paper describes the implementation of an online Bulgarian-Polish dictionary as a technological tool for applications in digital humanities. This bilingual digital dictionary is developed in the frame of the joint research project “Semantics and Contrastive Linguistics with a focus on a bilingual electronic dictionary” between IMI-BAS and ISS-PAS, supervised by L. Dimitrova (IMI-BAS and V. Koseska-Toszewa (ISS-PAS. In addition, the main software tools for web-presentation of the dictionary are described briefly.

  18. Confocal Raman spectrocopy for the analysis of nail polish evidence.

    Science.gov (United States)

    López-López, Maria; Vaz, Joana; García-Ruiz, Carmen

    2015-06-01

    Nail polishes are cosmetic paints that may be susceptible of forensic analysis offering useful information to assist in a crime reconstruction. Although the nail polish appearance could allow a quick visual identification of the sample, this analysis is subjected to the perception and subjective interpretation of the forensic examiner. The chemical analysis of the nail polishes offers great deal of information not subjected to analyst interpretation. Confocal Raman spectroscopy is a well-suited technique for the analysis of paints due to its non-invasive and non-destructive nature and its ability to supply information about the organic and inorganic components of the sample. In this work, 77 regular and gel nail polishes were analyzed with confocal Raman spectroscopy using two laser wavelengths (532 and 780 nm). The sample behavior under the two laser wavelengths and the differences in the spectra taken at different points of the sample were studied for each nail polish. Additionally, the spectra obtained for all the nail polishes were visually compared. The results concluded that the longer laser wavelength prevents sample burning and fluorescence effects; the similarity among the spectra collected within the sample is not directly related with the presence of glitter particles; and 64% of the samples analyzed showed a characteristic spectrum. Additionally, the use of confocal Raman spectroscopy for the forensic analysis of nail polishes evidence in the form of flakes or smudges on different surfaces were studied. The results showed that both types of evidence can be analyzed by the technique. Also, two non-invasive sampling methods for the collection of the evidence from the nails of the suspect or the victim were proposed: (i) to use acetone-soaked cotton swabs to remove the nail varnishes and (ii) to scrape the nail polish from the nail with a blade. Both approaches, each exhibiting advantages and drawbacks in terms of transport and handling were appropriate

  19. Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage.

    Science.gov (United States)

    Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

    2016-08-10

    This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

  20. Facile Quantification and Identification Techniques for Reducing Gases over a Wide Concentration Range Using a MOS Sensor in Temperature-Cycled Operation

    Directory of Open Access Journals (Sweden)

    Caroline Schultealbert

    2018-03-01

    Full Text Available Dedicated methods for quantification and identification of reducing gases based on model-based temperature-cycled operation (TCO using a single commercial MOS gas sensor are presented. During high temperature phases the sensor surface is highly oxidized, yielding a significant sensitivity increase after switching to lower temperatures (differential surface reduction, DSR. For low concentrations, the slope of the logarithmic conductance during this low-temperature phase is evaluated and can directly be used for quantification. For higher concentrations, the time constant for reaching a stable conductance during the same low-temperature phase is evaluated. Both signals represent the reaction rate of the reducing gas on the strongly oxidized surface at this low temperature and provide a linear calibration curve, which is exceptional for MOS sensors. By determining these reaction rates on different low-temperature plateaus and applying pattern recognition, the resulting footprint can be used for identification of different gases. All methods are tested over a wide concentration range from 10 ppb to 100 ppm (4 orders of magnitude for four different reducing gases (CO, H2, ammonia and benzene using randomized gas exposures.