WorldWideScience

Sample records for polarized tunneling currents

  1. Spin polarization of tunneling current in barriers with spin-orbit coupling.

    Science.gov (United States)

    Fujita, T; Jalil, M B A; Tan, S G

    2008-03-19

    We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons.

  2. Spin polarization of tunneling current in barriers with spin-orbit coupling

    International Nuclear Information System (INIS)

    Fujita, T; Jalil, M B A; Tan, S G

    2008-01-01

    We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons

  3. Optimization of the polarized Klein tunneling currents in a sub-lattice: pseudo-spin filters and latticetronics in graphene ribbons.

    Science.gov (United States)

    López, Luis I A; Yaro, Simeón Moisés; Champi, A; Ujevic, Sebastian; Mendoza, Michel

    2014-02-12

    We found that with an increase of the potential barrier applied to metallic graphene ribbons, the Klein tunneling current decreases until it is totally destroyed and the pseudo-spin polarization increases until it reaches its maximum value when the current is zero. This inverse relation disfavors the generation of polarized currents in a sub-lattice. In this work we discuss the pseudo-spin control (polarization and inversion) of the Klein tunneling currents, as well as the optimization of these polarized currents in a sub-lattice, using potential barriers in metallic graphene ribbons. Using density of states maps, conductance results, and pseudo-spin polarization information (all of them as a function of the energy V and width of the barrier L), we found (V, L) intervals in which the polarized currents in a given sub-lattice are maximized. We also built parallel and series configurations with these barriers in order to further optimize the polarized currents. A systematic study of these maps and barrier configurations shows that the parallel configurations are good candidates for optimization of the polarized tunneling currents through the sub-lattice. Furthermore, we discuss the possibility of using an electrostatic potential as (i) a pseudo-spin filter or (ii) a pseudo-spin inversion manipulator, i.e. a possible latticetronic of electronic currents through metallic graphene ribbons. The results of this work can be extended to graphene nanostructures.

  4. Comparison of Electron Transmittance and Tunneling Current through a Trapezoidal Potential Barrier with Spin Polarization Consideration by using Analytical and Numerical Approaches

    Science.gov (United States)

    Nabila, Ezra; Noor, Fatimah A.; Khairurrijal

    2017-07-01

    In this study, we report an analytical calculation of electron transmittance and polarized tunneling current in a single barrier heterostructure of a metal-GaSb-metal by considering the Dresselhaus spin orbit effect. Exponential function, WKB method and Airy function were used in calculating the electron transmittance and tunneling current. A Transfer Matrix Method, as a numerical method, was utilized as the benchmark to evaluate the analytical calculation. It was found that the transmittances calculated under exponential function and Airy function is the same as that calculated under TMM method at low electron energy. However, at high electron energy only the transmittance calculated under Airy function approach is the same as that calculated under TMM method. It was also shown that the transmittances both of spin-up and spin-down conditions increase as the electron energy increases for low energies. Furthermore, the tunneling current decreases with increasing the barrier width.

  5. Thermal stability of tunneling spin polarization

    International Nuclear Information System (INIS)

    Kant, C.H.; Kohlhepp, J.T.; Paluskar, P.V.; Swagten, H.J.M.; Jonge, W.J.M. de

    2005-01-01

    We present a study of the thermal stability of tunneling spin polarization in Al/AlOx/ferromagnet junctions based on the spin-polarized tunneling technique, in which the Zeeman-split superconducting density of states in the Al electrode is used as a detector for the spin polarization. Thermal robustness of the polarization, which is of key importance for the performance of magnetic tunnel junction devices, is demonstrated for post-deposition anneal temperatures up to 500 o C with Co and Co 90 Fe 10 top electrodes, independent of the presence of an FeMn layer on top of the ferromagnet

  6. Circular polarization in a non-magnetic resonant tunneling device

    Directory of Open Access Journals (Sweden)

    Airey Robert

    2011-01-01

    Full Text Available Abstract We have investigated the polarization-resolved photoluminescence (PL in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW PL presents strong circular polarization (values up to -70% at 19 T. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.

  7. Spin polarization at the interface and tunnel magnetoresistance

    International Nuclear Information System (INIS)

    Itoh, H.; Inoue, J.

    2001-01-01

    We propose that interfacial states of imperfectly oxidized Al ions may exist in ferromagnetic tunnel junctions with Al-O barrier and govern both the spin polarization and tunnel conductance. It is shown that the spin polarization is positive independent of materials and correlates well with the tunnel magnetoresistance

  8. Resonant tunneling via spin-polarized barrier states in a magnetic tunnel junction

    NARCIS (Netherlands)

    Jansen, R.; Lodder, J.C.

    2000-01-01

    Resonant tunneling through states in the barrier of a magnetic tunnel junction has been analyzed theoretically for the case of a spin-polarized density of barrier states. It is shown that for highly spin-polarized barrier states, the magnetoresistance due to resonant tunneling is enhanced compared

  9. Spin-polarized tunneling through a ferromagnetic insulator

    NARCIS (Netherlands)

    Kok, M.; Kok, M.; Beukers, J.N.; Brinkman, Alexander

    2009-01-01

    The polarization of the tunnel conductance of spin-selective ferromagnetic insulators is modeled, providing a generalized concept of polarization including both the effects of electrode and barrier polarization. The polarization model is extended to take additional non-spin-polarizing insulating

  10. Electron-spin polarization in tunnel junctions with ferromagnetic EuS barriers

    International Nuclear Information System (INIS)

    Hao, X.; Moodera, J.S.; Meservey, R.

    1989-01-01

    The authors report here spin-polarized tunneling experiments using non-ferromagnetic electrodes and ferromagnetic EuS barriers. Because of the conduction band in EuS splits into spin-up and spin-down subbands when the temperature is below 16.7 K, the Curie temperature of EuS, the tunnel barrier for electrons with different spin directions is different, therefore giving rise to tunnel current polarization. The spin-filter effect, as it may be called, was observed earlier, directly or indirectly, by several groups: Esaki et al. made a tunneling study on junctions having EuS and EuSe barriers; Thompson et al. studied Schottky barrier tunneling between In and doped EuS; Muller et al. and Kisker et al. performed electron field emission experiments on EuS-coated tungsten tips. The field emission experiments gave a maximum polarization of (89 + 7)% for the emitted electrons. Although the previous tunneling studies did not directly show electron polarization, their results were explained by the same spin- filter effect. This work uses the spin-polarized tunneling technique to show directly that tunnel current is indeed polarized and polarization can be as high as 85%

  11. Spin polarized electron tunneling and magnetoresistance in molecular junctions.

    Science.gov (United States)

    Szulczewski, Greg

    2012-01-01

    This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.

  12. Probing spin-polarized tunneling at high bias and temperature with a magnetic tunnel transistor

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Min, B.C.; Sanderink, Johannes G.M.; Lodder, J.C.; Jansen, R.

    2005-01-01

    The magnetic tunnel transistor (MTT) is a three terminal hybrid device that consists of a tunnel emitter, a ferromagnetic (FM) base, and a semiconductor collector. In the MTT with a FM emitter and a single FM base, spin-polarized hot electrons are injected into the base by tunneling. After

  13. Spin-polarized current generated by magneto-electrical gating

    International Nuclear Information System (INIS)

    Ma Minjie; Jalil, Mansoor Bin Abdul; Tan, Seng Ghee

    2012-01-01

    We theoretically study spin-polarized current through a single electron tunneling transistor (SETT), in which a quantum dot (QD) is coupled to non-magnetic source and drain electrodes via tunnel junctions, and gated by a ferromagnetic (FM) electrode. The I–V characteristics of the device are investigated for both spin and charge currents, based on the non-equilibrium Green's function formalism. The FM electrode generates a magnetic field, which causes a Zeeman spin-splitting of the energy levels in the QD. By tuning the size of the Zeeman splitting and the source–drain bias, a fully spin-polarized current is generated. Additionally, by modulating the electrical gate bias, one can effect a complete switch of the polarization of the tunneling current from spin-up to spin-down current, or vice versa. - Highlights: ► The spin polarized transport through a single electron tunneling transistor is systematically studied. ► The study is based on Keldysh non-equilibrium Green's function and equation of motion method. ► A fully spin polarized current is observed. ► We propose to reverse current polarization by the means of gate voltage modulation. ► This device can be used as a bi-polarization current generator.

  14. Submucosal tunneling techniques: current perspectives

    Directory of Open Access Journals (Sweden)

    Kobara H

    2014-04-01

    Full Text Available Hideki Kobara,1 Hirohito Mori,1 Kazi Rafiq,2 Shintaro Fujihara,1 Noriko Nishiyama,1 Maki Ayaki,1 Tatsuo Yachida,1 Tae Matsunaga,1 Johji Tani,1 Hisaaki Miyoshi,1 Hirohito Yoneyama,1 Asahiro Morishita,1 Makoto Oryu,1 Hisakazu Iwama,3 Tsutomu Masaki1 1Department of Gastroenterology and Neurology, 2Department of Pharmacology, 3Life Science Research Center, Faculty of Medicine, Kagawa University, Miki-cho, Kita-Gun, Kagawa, Japan Abstract: Advances in endoscopic submucosal dissection include a submucosal tunneling technique, involving the introduction of tunnels into the submucosa. These tunnels permit safer offset entry into the peritoneal cavity for natural orifice transluminal endoscopic surgery. Technical advantages include the visual identification of the layers of the gut, blood vessels, and subepithelial tumors. The creation of a mucosal flap that minimizes air and fluid leakage into the extraluminal cavity can enhance the safety and efficacy of surgery. This submucosal tunneling technique was adapted for esophageal myotomy, culminating in its application to patients with achalasia. This method, known as per oral endoscopic myotomy, has opened up the new discipline of submucosal endoscopic surgery. Other clinical applications of the submucosal tunneling technique include its use in the removal of gastrointestinal subepithelial tumors and endomicroscopy for the diagnosis of functional and motility disorders. This review suggests that the submucosal tunneling technique, involving a mucosal safety flap, can have potential values for future endoscopic developments. Keywords: submucosal endoscopy, submucosal tunneling method, natural orifice transluminal endoscopic surgery, peroral endoscopic myotomy, gastrointestinal subepithelial tumor, functional and motility disorders

  15. From epitaxial growth of ferrite thin films to spin-polarized tunnelling

    International Nuclear Information System (INIS)

    Moussy, Jean-Baptiste

    2013-01-01

    This paper presents a review of the research which is focused on ferrite thin films for spintronics. First, I will describe the potential of ferrite layers for the generation of spin-polarized currents. In the second step, the structural and chemical properties of epitaxial thin films and ferrite-based tunnel junctions will be presented. Particular attention will be given to ferrite systems grown by oxygen-assisted molecular beam epitaxy. The analysis of the structure and chemistry close to the interfaces, a key-point for understanding the spin-polarized tunnelling measurements, will be detailed. In the third part, the magnetic and magneto-transport properties of magnetite (Fe 3 O 4 ) thin films as a function of structural defects such as the antiphase boundaries will be explained. The spin-polarization measurements (spin-resolved photoemission, tunnel magnetoresistance) on this oxide predicted to be half-metallic will be discussed. Fourth, the potential of magnetic tunnel barriers, such as CoFe 2 O 4 , NiFe 2 O 4 or MnFe 2 O 4 , whose insulating behaviour and the high Curie temperatures make it exciting candidates for spin filtering at room temperature will be described. Spin-polarized tunnelling experiments, involving either Meservey–Tedrow or tunnel magnetoresistance measurements, will reveal significant spin-polarizations of the tunnelling current at low temperatures but also at room temperatures. Finally, I will mention a few perspectives with ferrite-based heterostructures. (topical review)

  16. Large positive spin polarization and giant inverse tunneling magnetoresistance in Fe/PbTiO3/Fe multiferroic tunnel junction

    International Nuclear Information System (INIS)

    Dai, Jian-Qing; Zhang, Hu; Song, Yu-Min

    2014-01-01

    We perform first-principles electronic structure and spin-dependent transport calculations of a multiferroic tunnel junction (MFTJ) with an epitaxial Fe/PbTiO 3 /Fe heterostructure. We predict a large positive spin-polarization (SP) and an intriguing giant inverse tunneling magnetoresistance (TMR) ratio in this tunnel junction. We demonstrate that the tunneling properties are determined by ferroelectric (FE) polarization screening and electronic reconstruction at the interface with lower electrostatic potential. The intricate complex band structure of PbTiO 3 , in particular the lowest decay rates concerning Pb 6p z and Ti 3d z2 states near the Γ ¯ point, gives rise to the large positive SP of the tunneling current in the parallel magnetic configuration. However, the giant inverse TMR ratio is attributed to the minority-spin electrons of the interfacial Ti 3d xz +3d yz orbitals which have considerably weight in the extended area around the Γ ¯ point at the Fermi energy and causes remarkable contributions to the conductance in the antiparallel magnetic configuration. - Highlights: • We study spin-dependent tunneling in Fe/PbTiO 3 /Fe multiferroic tunnel junction. • We find a large positive spin polarization in the parallel magnetic configuration. • An intriguing giant inverse TMR ratio (about −2000%) is predicted. • Complex band structure of PbTiO 3 causes the large positive spin polarization. • Negative TMR is due to minority-spin electrons of interfacial Ti d xz +d yz orbitals

  17. Spin-polarized inelastic tunneling through insulating barriers.

    Science.gov (United States)

    Lu, Y; Tran, M; Jaffrès, H; Seneor, P; Deranlot, C; Petroff, F; George, J-M; Lépine, B; Ababou, S; Jézéquel, G

    2009-05-01

    Spin-conserving hopping transport through chains of localized states has been evidenced by taking benefit of the high degree of spin-polarization of CoFeB-MgO-CoFeB magnetic tunnel junctions. In particular, our data show that relatively thick MgO barriers doped with boron favor the activation of spin-conserving inelastic channels through a chain of three localized states and leading to reduced magnetoresistance effects. We propose an extension of the Glazman-Matveev theory to the case of ferromagnetic reservoirs to account for spin-polarized inelastic tunneling through nonmagnetic localized states embedded in an insulating barrier.

  18. Oliver E. Buckley Prize Talk: Spin polarized tunneling and tunnel magnetoresistance -- Learning from the past and moving forward

    Science.gov (United States)

    Moodera, Jagadeesh

    2009-03-01

    Electron tunneling phenomenon has contributed enormously to our understanding of various branches of physics over the years. The technique of spin polarized tunneling (SPT), sensing the spin polarization of tunneling electrons using a superconducting spin detector, discovered by Meservey and Tedrow in the early seventies has been successfully utilized over the years to understand many aspects of magnetism and superconductivity. Electrical spin injection/detection in a semiconductor is strongly believed to succeed through such an approach. The successful observation of a large change in tunnel current in magnetic tunnel junctions (MTJ) in the mid nineties has brought extreme activity in this field -- both from fundamental study as well as extensive application in mind (as sensors, nonvolatile memory devices, logic elements etc). From the early history of this field that led to the discovery of room temperature TMR effect to the observation of many novel phenomena to the exciting recent work on spin filtering, spin transport in semiconductors to toggling of the superconducting state with spin current will be highlighted and reviewed. Work done in collaboration with Drs. Meservey and Tedrow, PhD students, postdoctorals, as well as high school students and undergraduates. NSF, ONR, DARPA and KIST-MIT project funds supported the research over the years.

  19. Spin polarized tunnelling investigation of nanometre Co clusters by means of a Ni bulk tip

    International Nuclear Information System (INIS)

    Rastei, M V; Bucher, J P

    2006-01-01

    A massive Ni tip is used in spin polarized scanning tunnelling microscopy (SP STM) to explore the magnetization state of nanometre Co clusters, self-organized on the Au(111) surface. Constant current STM images taken at 4.6 K show a bimodal distribution of the cluster heights, accounting for the spin polarization of the STM junction. The spin polarization of the tunnel junction as a function of the bias voltage is found to depend on the local density of states of the sample examined. Changing the vacuum barrier parameters by bringing the tip closer to the surface leads to a reduction in the tunnelling magnetoresistance that may be attributed to spin flip effects. (letter to the editor)

  20. Spin-Polarization in Quasi-Magnetic Tunnel Junctions

    Science.gov (United States)

    Xie, Zheng-Wei; Li, Ling

    2017-05-01

    Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasi-magnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter (SF) layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight. Supported by the Key Natural Science Fund of Sichuan Province Education Department under Grant Nos 13ZA0149 and 16ZA0047, and the Construction Plan for Scientific Research Innovation Team of Universities in Sichuan Province under Grant No 12TD008.

  1. New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

    Directory of Open Access Journals (Sweden)

    Jimy Encomendero

    2017-10-01

    Full Text Available For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride double barrier heterostructures has remained elusive at room temperature. In this work we theoretically and experimentally study III-nitride double-barrier resonant tunneling diodes (RTDs, the quantum transport characteristics of which exhibit new features that are unexplainable using existing semiconductor theory. The repeatable and robust resonant transport in our devices enables us to track the origin of these features to the broken inversion symmetry in the uniaxial crystal structure, which generates built-in spontaneous and piezoelectric polarization fields. Resonant tunneling transport enabled by the ground state as well as by the first excited state is demonstrated for the first time over a wide temperature window in planar III-nitride RTDs. An analytical transport model for polar resonant tunneling heterostructures is introduced for the first time, showing a good quantitative agreement with experimental data. From this model we realize that tunneling transport is an extremely sensitive measure of the built-in polarization fields. Since such electric fields play a crucial role in the design of electronic and photonic devices, but are difficult to measure, our work provides a completely new method to accurately determine their magnitude for the entire class of polar heterostructures.

  2. Gap anisotropy and tunneling currents. [MPS3

    DEFF Research Database (Denmark)

    Lazarides, N.; Sørensen, Mads Peter

    1996-01-01

    The tunneling Hamiltonian formalism is applied to calculate the tunnelingcurrents through a small superconducting tunnel junction. The formalism isextended to nonconstant tunneling matrix elements. The electrodes of thejunction are assumed to......The tunneling Hamiltonian formalism is applied to calculate the tunnelingcurrents through a small superconducting tunnel junction. The formalism isextended to nonconstant tunneling matrix elements. The electrodes of thejunction are assumed to...

  3. Theoretical consideration of spin-polarized resonant tunneling in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Mu Haifeng; Zhu Zhengang; Zheng Qingrong; Jin Biao; Wang Zhengchuan; Su Gang

    2004-01-01

    A recent elegant experimental realization [S. Yuasa et al., Science 297 (2002) 234] of the spin-polarized resonant tunneling in magnetic tunnel junctions is interpreted in terms of a two-band model. It is shown that the tunnel magnetoresistance (TMR) decays oscillatorily with the thickness of the normal metal (NM) layer, being fairly in agreement with the experimental observation. The tunnel conductance is found to decay with slight oscillations with the increase of the NM layer thickness, which is also well consistent with the experiment. In addition, when the magnetizations of both ferromagnet electrodes are not collinearly aligned, TMR is found to exhibit sharp resonant peaks at some particular thickness of the NM layer. The peaked TMR obeys nicely a Gaussian distribution against the relative orientation of the magnetizations

  4. Coaxial nanowire resonant tunneling diodes from non-polar AlN/GaN on silicon

    Science.gov (United States)

    Carnevale, S. D.; Marginean, C.; Phillips, P. J.; Kent, T. F.; Sarwar, A. T. M. G.; Mills, M. J.; Myers, R. C.

    2012-04-01

    Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial geometry, these devices take advantage of non-polar (m-plane) nanowire sidewalls. Device modeling predicts non-polar orientation should enhance resonant tunneling compared to a polar structure, and that AlN double barriers will lead to higher peak-to-valley current ratios compared to AlGaN barriers. Electrical measurements of ensembles of nanowires show negative differential resistance appearing only at cryogenic temperature. Individual nanowire measurements show negative differential resistance at room temperature with peak current density of 5 × 105 A/cm2.

  5. The tunneling magnetoresistance and spin-polarized optoelectronic properties of graphyne-based molecular magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Yang, Zhi; Ouyang, Bin; Lan, Guoqing; Xu, Li-Chun; Liu, Ruiping; Liu, Xuguang

    2017-01-01

    Using density functional theory and the non-equilibrium Green’s function method, we investigate the spin-dependent transport and optoelectronic properties of the graphyne-based molecular magnetic tunnel junctions (MMTJs). We find that these MMTJs exhibit an outstanding tunneling magnetoresistance (TMR) effect. The TMR value is as high as 10 6 %. When the magnetization directions of two electrodes are antiparallel under positive or negative bias voltages, two kinds of pure spin currents can be obtained in the systems. Furthermore, under the irradiation of infrared, visible or ultraviolet light, spin-polarized photocurrents can be generated in the MMTJs, but the corresponding microscopic mechanisms are different. More importantly, if the magnetization directions of two electrodes are antiparallel, the photocurrents with different spins are spatially separated, appearing at different electrodes. This phenomenon provides a new way to simultaneously generate two spin currents. (paper)

  6. Thermoelectric-induced spin currents in single-molecule magnet tunnel junctions

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang; Wang, Ruiqiang; Wang, Baigeng; Xing, D. Y.

    2010-12-01

    A molecular spin-current generator is proposed, which consists of a single-molecule magnet (SMM) coupled to two normal metal electrodes with temperature gradient. It is shown that this tunneling junction can generate a highly spin-polarized current by thermoelectric effects, whose flowing direction and spin polarization can be changed by adjusting the gate voltage applied to the SMM. This device can be realized with current technologies and may have practical use in spintronics and quantum information.

  7. Joule heating and spin-transfer torque investigated on the atomic scale using a spin-polarized scanning tunneling microscope.

    Science.gov (United States)

    Krause, S; Herzog, G; Schlenhoff, A; Sonntag, A; Wiesendanger, R

    2011-10-28

    The influence of a high spin-polarized tunnel current onto the switching behavior of a superparamagnetic nanoisland on a nonmagnetic substrate is investigated by means of spin-polarized scanning tunneling microscopy. A detailed lifetime analysis allows for a quantification of the effective temperature rise of the nanoisland and the modification of the activation energy barrier for magnetization reversal, thereby using the nanoisland as a local thermometer and spin-transfer torque analyzer. Both the Joule heating and spin-transfer torque are found to scale linearly with the tunnel current. The results are compared to experiments performed on lithographically fabricated magneto-tunnel junctions, revealing a very high spin-transfer torque switching efficiency in our experiments.

  8. Spin-polarized scanning tunneling microscopy: breakthroughs and highlights.

    Science.gov (United States)

    Bode, Matthias

    2012-01-01

    The principle of scanning tunneling microscopy, an imaging method with atomic resolution capability invented by Binnig and Rohrer in 1982, can be adapted for surface magnetism studies by using magnetic probe tips. The contrast mechanism of this so-called spin-polarized scanning tunneling microscopy, or SP-STM, relies on the tunneling magneto-resistance effect, i.e. the tip-sample distance as well as the differential conductance depend on the relative magnetic orientation of tip and sample. To illustrate the working principle and the unique capabilities of SP-STM, this compilation presents some key experiments which have been performed on various magnetic surfaces, such as the topological antiferromagnet Cr(001), a double-layer of Fe which exhibits a stripe- domain pattern with about 50 nm periodicity, and the Mn monolayer on W(110), where the combination of experiment and theory reveal an antiferromagnetic spin cycloid. Recent experimental results also demonstrate the suitability of SP-STM for studies of dynamic properties, such as the spin relaxation time of single magnetic nanostructures.

  9. Spin-polarized magnetic tunnelling magnetoresistive effects in various junctions

    Science.gov (United States)

    Miyazaki, T.; Tezuka, N.; Kumagai, S.; Ando, Y.; Kubota, H.; Murai, J.; Watabe, T.; Yokota, M.

    1998-03-01

    Recent progress concerning spin-polarized magnetic tunnelling effects for (i) trilayer standard ferromagnet (F)/insulator (I)/ferromagnet (F) junctions, (ii) spin-valve-type junctions, (iii) trilayer or multilayer ferromagnet/granular/ferromagnet junctions and (iv) F/I/F junction with a `wedge-geometry' insulator is reviewed. Special emphasis is placed on the dependence of the tunnel magnetoresistance ratio on temperature and also the intensity of the applied voltage. It was found that the resistance for the saturation magnetization state, 0022-3727/31/6/009/img1, and the tunnelling magnetoresistance ratio, TMR, of an 0022-3727/31/6/009/img2 junction decreased rapidly with increasing temperature, whereas those of a 0022-3727/31/6/009/img3 junction were insensitive to temperature. Concerning the bias voltage dependence of 0022-3727/31/6/009/img1 and TMR, the same tendency with temperature was observed for 0022-3727/31/6/009/img2 and 0022-3727/31/6/009/img3 junctions. Spin-valve-type junction exchange biased by a FeMn layer exhibits a relatively large TMR ratio up to about 400 K.

  10. High current polarized proton sources

    Energy Technology Data Exchange (ETDEWEB)

    Alessi, J.G.

    1988-01-01

    Polarized proton sources are now being used more frequently on linacs. In pulsed operation up to 10 mA of /rvec H//sup +/ and 0.4 mA of /rvec H//sup /minus// have been produced. The present status of these sources, and developments to reach even higher intensities, are reviewed. 39 refs., 1 tab.

  11. Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor

    Science.gov (United States)

    Choi, Seokhwan; Choi, Hyoung Joon; Ok, Jong Mok; Lee, Yeonghoon; Jang, Won-Jun; Lee, Alex Taekyung; Kuk, Young; Lee, SungBin; Heinrich, Andreas J.; Cheong, Sang-Wook; Bang, Yunkyu; Johnston, Steven; Kim, Jun Sung; Lee, Jhinhwan

    2017-12-01

    We explore a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single-crystal Sr2VO3FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a nontrivial C4 (2 ×2 ) order, which cannot be achieved by thermal excitation with an unpolarized current. Our tunneling spectroscopy study shows that the induced C4 (2 ×2 ) order has characteristics of plaquette antiferromagnetic order in the Fe layer and strongly suppresses superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the C4 state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.

  12. Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor.

    Science.gov (United States)

    Choi, Seokhwan; Choi, Hyoung Joon; Ok, Jong Mok; Lee, Yeonghoon; Jang, Won-Jun; Lee, Alex Taekyung; Kuk, Young; Lee, SungBin; Heinrich, Andreas J; Cheong, Sang-Wook; Bang, Yunkyu; Johnston, Steven; Kim, Jun Sung; Lee, Jhinhwan

    2017-12-01

    We explore a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single-crystal Sr_{2}VO_{3}FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a nontrivial C_{4} (2×2) order, which cannot be achieved by thermal excitation with an unpolarized current. Our tunneling spectroscopy study shows that the induced C_{4} (2×2) order has characteristics of plaquette antiferromagnetic order in the Fe layer and strongly suppresses superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the C_{4} state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.

  13. Tunnel spin polarization versus energy for clean and doped Al2O3 barriers

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Lodder, J.C.; Jansen, R.

    2007-01-01

    The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the

  14. Tunnel Spin Polarization Versus Energy for Clean and Doped Al2O3 Barriers

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Lodder, J.C.; Jansen, R.

    2007-01-01

    The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the

  15. Recent advances in atomic-scale spin-polarized scanning tunneling microscopy.

    Science.gov (United States)

    Smith, Arthur R; Yang, Rong; Yang, Haiqiang; Dick, Alexey; Neugebauer, Joerg; Lambrecht, Walter R L

    2005-02-01

    The Mn3N2 (010) surface has been studied using spin-polarized scanning tunneling microscopy at the atomic scale. The principle objective of this work is to elucidate the properties and potential of this technique to measure atomic-scale magnetic structures. The experimental approach involves the use of a combined molecular beam epitaxy/scanning tunneling microscopy system that allows the study of atomically clean magnetic surfaces. Several key findings have been obtained. First, both magnetic and non-magnetic atomic-scale information has been obtained in a single spin-polarized image. Magnetic modulation of the height profile having an antiferromagnetic super-period of c = 12.14 A (6 atomic rows) together with a non-magnetic superstructure having a period of c/2 = 6.07 A (3 atomic rows) was observed. Methods of separation of magnetic and non-magnetic profiles are presented. Second, bias voltage-dependent spin-polarized images show a reversal of the magnetic modulation at a particular voltage. This reversal is clearly due to a change in the sign of the magnetic term in the tunnel current. Since this term depends on both the tip's as well as the sample's magnetic local density of states, the reversal can be caused by either the sample or the tip. Third, the shape of the line profile was found to vary with the bias voltage, which is related to the energy-dependent spin contribution from the 2 chemically inequivalent Mn sites on the surface. Overall, the results shown here expand the application of the method of spin-polarized scanning tunneling microscopy to measure atomic-scale magnetic structures. (c) 2005 Wiley-Liss, Inc.

  16. Amplification of spin-current polarization

    Science.gov (United States)

    Saha, D.; Holub, M.; Bhattacharya, P.

    2007-08-01

    A ferromagnet/semiconductor based electrically controlled spin-current amplifier using a dual-drain nonlocal lateral spin valve is demonstrated. The spin polarization injected by the source into the channel is amplified at the second drain contact. An amplified current spin polarization of 100% is measured. The controlled variation of amplifier gain with bias is also demonstrated. The observations are explained in the framework of the spin drift-diffusion model.

  17. Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

    KAUST Repository

    Manchon, Aurelien

    2011-10-01

    Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

  18. Antiferromagnetic Spin Coupling between Rare Earth Adatoms and Iron Islands Probed by Spin-Polarized Tunneling.

    Science.gov (United States)

    Coffey, David; Diez-Ferrer, José Luis; Serrate, David; Ciria, Miguel; de la Fuente, César; Arnaudas, José Ignacio

    2015-09-03

    High-density magnetic storage or quantum computing could be achieved using small magnets with large magnetic anisotropy, a requirement that rare-earth iron alloys fulfill in bulk. This compelling property demands a thorough investigation of the magnetism in low dimensional rare-earth iron structures. Here, we report on the magnetic coupling between 4f single atoms and a 3d magnetic nanoisland. Thulium and lutetium adatoms deposited on iron monolayer islands pseudomorphically grown on W(110) have been investigated at low temperature with scanning tunneling microscopy and spectroscopy. The spin-polarized current indicates that both kind of adatoms have in-plane magnetic moments, which couple antiferromagnetically with their underlying iron islands. Our first-principles calculations explain the observed behavior, predicting an antiparallel coupling of the induced 5d electrons magnetic moment of the lanthanides with the 3d magnetic moment of iron, as well as their in-plane orientation, and pointing to a non-contribution of 4f electrons to the spin-polarized tunneling processes in rare earths.

  19. Quasi interference of perpendicularly polarized guided modes observed with a photon scanning tunneling microscope

    NARCIS (Netherlands)

    Balistreri, M.L.M.; Driessen, A.; Korterik, Jeroen P.; Kuipers, L.; van Hulst, N.F.

    2000-01-01

    The simultaneous detection of TE- as well as TM-polarized light with a photon scanning tunneling microscope leads to a quasi- interference pattern of these mutually perpendicular polarized fields. This interference pattern has been observed in the optical field distribution as a function of both

  20. Quantized acoustoelectric current in the presence of large tunneling counterflow

    DEFF Research Database (Denmark)

    Gloos, K.; Utko, P.; Hansen, Jørn Bindslev

    2004-01-01

    A surface acoustic wave drives an electrical current through a short quantum wire. A second tunneling current is injected by biasing one side of the quantum wire. These two contributions to the total current, which flow in opposite directions, are controlled almost independently by the gate...... interaction between the two currents, but is probably caused by the complex potential landscape in the narrow channel of the quantum wire....

  1. FDI, Polarized Globalization, and the Current Crisis

    OpenAIRE

    David Mayer-Foulkes

    2012-01-01

    Even though the current crisis is clearly global, much of the analysis and many of the policy proposals have a single country viewpoint, particularly in the case of the United States. Explanations concentrate, for example on the financial system and on population-wide indebtment. Here we examine the polarized impact of globalization on economic growth, which arises from the intense interaction between developed and underdeveloped countries, for example between the United States and China. We ...

  2. Tunneling Current Probe for Noncontract Wafer-Level Photodiode Array Testing

    National Research Council Canada - National Science Library

    Verdun, Horacio

    1999-01-01

    The Tunneling Current Probe (TCP) is an automated picometer-sensitive proximity sensor and current measurement system which measures the current through a photodiode detector array element by establishing a tunneling current...

  3. Temperature sensitivity analysis of polarity controlled electrostatically doped tunnel field-effect transistor

    Science.gov (United States)

    Nigam, Kaushal; Pandey, Sunil; Kondekar, P. N.; Sharma, Dheeraj

    2016-09-01

    The conventional tunnel field-effect transistors (TFETs) have shown potential to scale down in sub-22 nm regime due to its lower sub-threshold slope and robustness against short-channel effects (SCEs), however, sensitivity towards temperature variation is a major concern. Therefore, for the first time, we investigate temperature sensitivity analysis of a polarity controlled electrostatically doped tunnel field-effect transistor (ED-TFET). Different performance metrics and analog/RF figure-of-merits were considered and compared for both devices, and simulations were performed using Silvaco ATLAS device tool. We found that the variation in ON-state current in ED-TFET is almost temperature independent due to electrostatically doped mechanism, while, it increases in conventional TFET at higher temperature. Above room temperature, the variation in ION, IOFF, and SS sensitivity in ED-TFET are only 0.11%/K, 2.21%/K, and 0.63%/K, while, in conventional TFET the variations are 0.43%/K, 2.99%/K, and 0.71%/K, respectively. However, below room temperature, the variation in ED-TFET ION is 0.195%/K compared to 0.27%/K of conventional TFET. Moreover, it is analysed that the incomplete ionization effect in conventional TFET severely affects the drive current and the threshold voltage, while, ED-TFET remains unaffected. Hence, the proposed ED-TFET is less sensitive towards temperature variation and can be used for cryogenics as well as for high temperature applications.

  4. Spin-polarized scanning-tunneling probe for helical Luttinger liquids.

    Science.gov (United States)

    Das, Sourin; Rao, Sumathi

    2011-06-10

    We propose a three-terminal spin-polarized STM setup for probing the helical nature of the Luttinger liquid edge state that appears in the quantum spin Hall system. We show that the three-terminal tunneling conductance depends on the angle (θ) between the magnetization direction of the tip and the local orientation of the electron spin on the edge while the two terminal conductance is independent of this angle. We demonstrate that chiral injection of an electron into the helical Luttinger liquid (when θ is zero or π) is associated with fractionalization of the spin of the injected electron in addition to the fractionalization of its charge. We also point out a spin current amplification effect induced by the spin fractionalization.

  5. Hysteresis loops of spin-dependent electronic current in a paramagnetic resonant tunnelling diode

    International Nuclear Information System (INIS)

    Wójcik, P; Spisak, B J; Wołoszyn, M; Adamowski, J

    2012-01-01

    Nonlinear properties of the spin-dependent electronic transport through a semiconductor resonant tunnelling diode with a paramagnetic quantum well are considered. The spin-dependent Wigner–Poisson model of the electronic transport and the two-current Mott’s formula for the independent spin channels are applied to determine the current–voltage curves of the nanodevice. Two types of the electronic current hysteresis loops are found in the current–voltage characteristics for both the spin components of the electronic current. The physical interpretation of these two types of the electronic current hysteresis loops is given based on the analysis of the spin-dependent electron densities and the potential energy profiles. The differences between the current–voltage characteristics for both the spin components of the electronic current allow us to explore the changes of the spin polarization of the current for different electric fields and determine the influence of the electronic current hysteresis on the spin polarization of the current flowing through the paramagnetic resonant tunnelling diode. (paper)

  6. The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

    Directory of Open Access Journals (Sweden)

    Z. H. Zhang

    2015-03-01

    Full Text Available The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.

  7. Polarization-dependent tunneling of light in gradient optics

    Czech Academy of Sciences Publication Activity Database

    Shvartsburg, A. B.; Kuzmiak, Vladimír; Petite, G.

    2007-01-01

    Roč. 76, č. 1 (2007), 016603.1-01663.11 ISSN 1539-3755 R&D Projects: GA MŠk(CZ) OC P11.001 Institutional research plan: CEZ:AV0Z20670512 Keywords : wave propagation * tunnelling Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.483, year: 2007

  8. Resonant tunneling in small current-biased Josephson Junctions

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, John Mark [Univ. of California, Berkeley, CA (United States)

    1994-05-01

    Effects of resonant tunneling between bound quantum states of a current-biased Josephson tunnel junction is studied both theoretically and experimentally. Several effects are predicted to arise from resonant tunneling, including a series of voltage peaks along the supercurrent branch of the current-voltage characteristic, and enhanced rate of escape from zero voltage state to voltage state at particular values of bias current. A model is developed to estimate magnitude and duration of voltage peaks, and to estimate enhancement of the escape rate, which appears as peaks in the rate as a function of bias current. An experimental investigation was carried out in an attempt to observe these predicted peaks in the escape rate distribution in a current-biased DC SQUID, which is shown to be dynamically equivalent to a Josephson junction with adjustable critical current. Electrical contact to each SQUID (fabricated from aluminium) was made through high resistance thin film leads located on the substrate. These resistors provided a high impedance at the plasma frequency which is for the isolation of the SQUID from its electromagnetic environment. Measurements were carried out on a dilution refrigerator at temperatures as low as 19 mK. No evidence was found for resonant tunneling; this is attributed to effective temperatures of hundreds of millikelvin. The behavior is well explained by a heating model where the high effective temperatures are generated by ohmic heating of the electron gas of the isolation resistors, which decouples from the phonon system (hot electron effect). The prospects for further theoretical and experimental research are discussed.

  9. Magnetic Switching of a Single Molecular Magnet due to Spin-Polarized Current

    OpenAIRE

    Misiorny, Maciej; Barnas, Józef

    2006-01-01

    Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic electrodes is investigated theoretically. Magnetic moments of the electrodes are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through a barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system as well as the spin relaxation times of the SMM are calculated f...

  10. Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

    KAUST Repository

    Chshiev, M.

    2015-09-21

    In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.

  11. Tunneling Spectroscopy Study of Spin-Polarized Quasiparticle Injection Effects in Cuparate/Manganite Heterostructures

    Science.gov (United States)

    Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

    1998-01-01

    Scanning tunneling spectroscopy was performed at 4.2K on epitaxial thin-film heterostructures comprising YBa2Cu3O7 and La0.7Ca0.3MnO3, to study the microscopic effects of spin-polarized quasiparticle injection from the half-metallic ferromagnetic manganite on the high-Tc cuprate superconductor.

  12. Ion Concentration Polarization by Bifurcated Current Path.

    Science.gov (United States)

    Kim, Junsuk; Cho, Inhee; Lee, Hyomin; Kim, Sung Jae

    2017-07-11

    Ion concentration polarization (ICP) is a fundamental electrokinetic process that occurs near a perm-selective membrane under dc bias. Overall process highly depends on the current transportation mechanisms such as electro-convection, surface conduction and diffusioosmosis and the fundamental characteristics can be significantly altered by external parameters, once the permselectivity was fixed. In this work, a new ICP device with a bifurcated current path as for the enhancement of the surface conduction was fabricated using a polymeric nanoporous material. It was protruded to the middle of a microchannel, while the material was exactly aligned at the interface between two microchannels in a conventional ICP device. Rigorous experiments revealed out that the propagation of ICP layer was initiated from the different locations of the protruded membrane according to the dominant current path which was determined by a bulk electrolyte concentration. Since the enhancement of surface conduction maintained the stability of ICP process, a strong electrokinetic flow associated with the amplified electric field inside ICP layer was significantly suppressed over the protruded membrane even at condensed limit. As a practical example of utilizing the protruded device, we successfully demonstrated a non-destructive micro/nanofluidic preconcentrator of fragile cellular species (i.e. red blood cells).

  13. Compact scanning tunneling microscope for spin polarization measurements.

    Science.gov (United States)

    Kim, Seong Heon; de Lozanne, Alex

    2012-10-01

    We present a design for a scanning tunneling microscope that operates in ultrahigh vacuum down to liquid helium temperatures in magnetic fields up to 8 T. The main design philosophy is to keep everything compact in order to minimize the consumption of cryogens for initial cool-down and for extended operation. In order to achieve this, new ideas were implemented in the design of the microscope body, dewars, vacuum chamber, manipulators, support frame, and vibration isolation. After a brief description of these designs, the results of initial tests are presented.

  14. Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide.

    Science.gov (United States)

    Dankert, André; Pashaei, Parham; Kamalakar, M Venkata; Gaur, Anand P S; Sahoo, Satyaprakash; Rungger, Ivan; Narayan, Awadhesh; Dolui, Kapildeb; Hoque, Md Anamul; Patel, Ram Shanker; de Jong, Michel P; Katiyar, Ram S; Sanvito, Stefano; Dash, Saroj P

    2017-06-27

    The two-dimensional (2D) semiconductor molybdenum disulfide (MoS 2 ) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS 2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5-2% has been observed, corresponding to spin polarization of 5-10% in the measured temperature range of 300-75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS 2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

  15. Circularly polarized light emission in scanning tunneling microscopy of magnetic systems

    International Nuclear Information System (INIS)

    Apell, S.P.; Penn, D.R.; Johansson, P.

    2000-01-01

    Light is produced when a scanning tunneling microscope is used to probe a metal surface. Recent experiments on cobalt utilizing a tungsten tip found that the light is circularly polarized; the sense of circular polarization depends on the direction of the sample magnetization, and the degree of polarization is of order 10%. This raises the possibility of constructing a magnetic microscope with very good spatial resolution. We present a theory of this effect for iron and cobalt and find a degree of polarization of order 0.1%. This is in disagreement with the experiments on cobalt as well as previous theoretical work which found order of magnitude agreement with the experimental results. However, a recent experiment on iron showed 0.0±2%. We predict that the use of a silver tip would increase the degree of circular polarization for a range of photon energies

  16. Anomalous Tunneling of Spin Wave in Polar State of Spin-1 BEC

    International Nuclear Information System (INIS)

    Watabe, Shohei; Ohashi, Yoji; Kato, Yusuke

    2012-01-01

    We investigate tunneling properties of collective spin-wave excitations in the polar state of a spin-1 spinor Bose-Einstein condensate. Within the mean-field theory at T = 0, we show that when the condensate is in the critical supercurrent state, the spin wave mode exhibits perfect transmission through a nonmagnetic potential barrier in the low energy limit, unless the strength of a spin-independent interaction c o equals that of a spin-dependent interaction c o Such an anomalous tunneling behavior is absent in the case of a magnetic barrier. We also clarify a scaling law of the transmission probability as a function of the mode energy.

  17. Anomalous Tunneling of Spin Wave in Polar State of Spin-1 BEC

    Science.gov (United States)

    Watabe, Shohei; Kato, Yusuke; Ohashi, Yoji

    2012-12-01

    We investigate tunneling properties of collective spin-wave excitations in the polar state of a spin-1 spinor Bose-Einstein condensate. Within the mean-field theory at T = 0, we show that when the condensate is in the critical supercurrent state, the spin wave mode exhibits perfect transmission through a nonmagnetic potential barrier in the low energy limit, unless the strength of a spin-independent interaction co equals that of a spin-dependent interaction co Such an anomalous tunneling behavior is absent in the case of a magnetic barrier. We also clarify a scaling law of the transmission probability as a function of the mode energy.

  18. Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

    Directory of Open Access Journals (Sweden)

    Bin Fang

    2016-12-01

    Full Text Available We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.

  19. Classification of DNA nucleotides with transverse tunneling currents

    DEFF Research Database (Denmark)

    Pedersen, Jonas Nyvold; Boynton, Paul; Ventra, Massimiliano Di

    2017-01-01

    , however. In realistic liquid environments, typical currents in tunneling devices are of the order of picoamps. This corresponds to only six electrons per microsecond, and this number affects the integration time required to do current measurements in real experiments. This limits the speed of sequencing......, though current fluctuations due to Brownian motion of the molecule average out during the required integration time. Moreover, data acquisition equipment introduces noise, and electronic filters create correlations in time-series data. We discuss how these effects must be included in the analysis of, e.......g., the assignment of specific nucleobases to current signals. As the signals from different molecules overlap, unambiguous classification is impossible with a single measurement. We argue that the assignment of molecules to a signal is a standard pattern classification problem and calculation of the error rates...

  20. Effect of Orbital Hybridization on Spin-Polarized Tunneling across Co/C60 Interfaces.

    Science.gov (United States)

    Wang, Kai; Strambini, Elia; Sanderink, Johnny G M; Bolhuis, Thijs; van der Wiel, Wilfred G; de Jong, Michel P

    2016-10-26

    The interaction between ferromagnetic surfaces and organic semiconductors leads to the formation of hybrid interfacial states. As a consequence, the local magnetic moment is altered, a hybrid interfacial density of states (DOS) is formed, and spin-dependent shifts of energy levels occur. Here, we show that this hybridization affects spin transport across the interface significantly. We report spin-dependent electronic transport measurements for tunnel junctions comprising C 60 molecular thin films grown on top of face-centered-cubic (fcc) epitaxial Co electrodes, an AlO x tunnel barrier, and an Al counter electrode. Since only one ferromagnetic electrode (Co) is present, spin-polarized transport is due to tunneling anisotropic magnetoresistance (TAMR). An in-plane TAMR ratio of approximately 0.7% has been measured at 5 K under application of a magnetic field of 800 mT. The magnetic switching behavior shows some remarkable features, which are attributed to the rotation of interfacial magnetic moments. This behavior can be ascribed to the magnetic coupling between the Co thin films and the newly formed Co/C 60 hybridized interfacial states. Using the Tedrow-Meservey technique, the tunnel spin polarization of the Co/C 60 interface was found to be 43%.

  1. Interface-induced chiral domain walls, spin spirals and skyrmions revealed by spin-polarized scanning tunneling microscopy.

    Science.gov (United States)

    von Bergmann, Kirsten; Kubetzka, André; Pietzsch, Oswald; Wiesendanger, Roland

    2014-10-01

    The spin textures of ultra-thin magnetic layers exhibit surprising variety. The loss of inversion symmetry at the interface of the magnetic layer and substrate gives rise to the so-called Dzyaloshinskii-Moriya interaction which favors non-collinear spin arrangements with unique rotational sense. Here we review the application of spin-polarized scanning tunneling microscopy to such systems, which has led to the discovery of interface-induced chiral domain walls and spin spirals. Recently, different interface-driven skyrmion lattices have been found, and the writing as well as the deleting of individual skyrmions based on local spin-polarized current injection has been demonstrated. These interface-induced non-collinear magnetic states offer new exciting possibilities to study fundamental magnetic interactions and to tailor material properties for spintronic applications.

  2. New materials research for high spin polarized current

    International Nuclear Information System (INIS)

    Tezuka, Nobuki

    2012-01-01

    The author reports here a thorough investigation of structural and magnetic properties of Co 2 FeAl 0.5 Si 0.5 Heusler alloy films, and the tunnel magnetoresistance effect for junctions with Co 2 FeAl 0.5 Si 0.5 electrodes, spin injection into GaAs semiconductor from Co 2 FeAl 0.5 Si 0.5 , and spin filtering phenomena for junctions with CoFe 2 O 4 ferrite barrier. It was observed that tunnel magnetoresistance ratio up to 832%(386%) at 9 K (room temperature), which corresponds to the tunnel spin polarization of 0.90 (0.81) for the junctions using Co 2 FeAl 0.5 Si 0.5 Heusler electrodes by optimizing the fabrication condition. It was also found that the tunnel magnetoresistance ratio are almost the same between the junctions with Co 2 FeAl 0.5 Si 0.5 Heusler electrodes on Cr buffered (1 0 0) and (1 1 0) MgO substrates, which indicates that tunnel spin polarization of Co 2 FeAl 0.5 Si 0.5 for these two direction are almost the same. The next part of this paper is a spin filtering effect using a Co ferrite. The spin filtering effect was observed through a thin Co-ferrite barrier. The inverse type tunnel magnetoresistance ratio of −124% measured at 10 K was obtained. The inverse type magnetoresistance suggests the negative spin polarization of Co-ferrite barrier. The magnetoresistance ratio of −124% corresponds to the spin polarization of −0.77 by the Co-ferrite barrier. The last part is devoted to the spin injection from Co 2 FeAl 0.5 Si 0.5 into GaAs. The spin injection signal was clearly obtained by three terminal Hanle measurement. The spin relaxation time was estimated to be 380 ps measured at 5 K.

  3. Detecting Spin-Polarized Currents in Ballistic Nanostructures

    DEFF Research Database (Denmark)

    Potok, R.; Folk, J.; M. Marcus, C.

    2002-01-01

    We demonstrate a mesoscopic spin polarizer/analyzer system that allows the spin polarization of current from a quantum point contact in an in-plane magnetic field to be measured. A transverse focusing geometry is used to couple current from an emitter point contact into a collector point contact....

  4. Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions

    KAUST Repository

    Manchon, Aurelien

    2011-05-17

    Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from an in-plane to out-of-plane configuration or magnetization precessions, similar to spin transfer torque in spin valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.

  5. In situ scanning tunneling microscope tip treatment device for spin polarization imaging

    Science.gov (United States)

    Li, An-Ping [Oak Ridge, TN; Jianxing, Ma [Oak Ridge, TN; Shen, Jian [Knoxville, TN

    2008-04-22

    A tip treatment device for use in an ultrahigh vacuum in situ scanning tunneling microscope (STM). The device provides spin polarization functionality to new or existing variable temperature STM systems. The tip treatment device readily converts a conventional STM to a spin-polarized tip, and thereby converts a standard STM system into a spin-polarized STM system. The tip treatment device also has functions of tip cleaning and tip flashing a STM tip to high temperature (>2000.degree. C.) in an extremely localized fashion. Tip coating functions can also be carried out, providing the tip sharp end with monolayers of coating materials including magnetic films. The device is also fully compatible with ultrahigh vacuum sample transfer setups.

  6. Anomalous tunneling of collective excitations and effects of superflow in the polar phase of a spin-1 spinor Bose-Einstein condensate

    International Nuclear Information System (INIS)

    Watabe, Shohei; Ohashi, Yoji; Kato, Yusuke

    2011-01-01

    We investigate tunneling properties of collective modes in the polar phase of a spin-1 spinor Bose-Einstein condensate (BEC). This spinor BEC state has two kinds of gapless modes (i.e., Bogoliubov and spin-wave). Within the framework of mean-field theory at T=0, we show that these Goldstone modes exhibit perfect transmission in the low-energy limit. Their anomalous tunneling behavior still holds in the presence of superflow, except in the critical current state. In the critical current state, while the tunneling of Bogoliubov mode is accompanied by finite reflection, the spin wave still exhibits perfect transmission, unless the strengths of spin-dependent and spin-independent interactions take the same value. We discuss the relation between perfect transmission of a spin wave and underlying superfluidity through a comparison of wave functions of the spin wave and the condensate.

  7. Anomalous tunneling of collective excitations and effects of superflow in the polar phase of a spin-1 spinor Bose-Einstein condensate

    Energy Technology Data Exchange (ETDEWEB)

    Watabe, Shohei; Ohashi, Yoji [Department of Physics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan); CREST (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Kato, Yusuke [Department of Basic Science, University of Tokyo, Tokyo 153-8902 (Japan)

    2011-07-15

    We investigate tunneling properties of collective modes in the polar phase of a spin-1 spinor Bose-Einstein condensate (BEC). This spinor BEC state has two kinds of gapless modes (i.e., Bogoliubov and spin-wave). Within the framework of mean-field theory at T=0, we show that these Goldstone modes exhibit perfect transmission in the low-energy limit. Their anomalous tunneling behavior still holds in the presence of superflow, except in the critical current state. In the critical current state, while the tunneling of Bogoliubov mode is accompanied by finite reflection, the spin wave still exhibits perfect transmission, unless the strengths of spin-dependent and spin-independent interactions take the same value. We discuss the relation between perfect transmission of a spin wave and underlying superfluidity through a comparison of wave functions of the spin wave and the condensate.

  8. Chiral tunneling of topological states: towards the efficient generation of spin current using spin-momentum locking.

    Science.gov (United States)

    Habib, K M Masum; Sajjad, Redwan N; Ghosh, Avik W

    2015-05-01

    We show that the interplay between chiral tunneling and spin-momentum locking of helical surface states leads to spin amplification and filtering in a 3D topological insulator (TI). Our calculations show that the chiral tunneling across a TI pn junction allows normally incident electrons to transmit, while the rest are reflected with their spins flipped due to spin-momentum locking. The net result is that the spin current is enhanced while the dissipative charge current is simultaneously suppressed, leading to an extremely large, gate-tunable spin-to-charge current ratio (∼20) at the reflected end. At the transmitted end, the ratio stays close to 1 and the electrons are completely spin polarized.

  9. Control of Domain Wall Polarity by Current Pulses

    Science.gov (United States)

    Vanhaverbeke, A.; Bischof, A.; Allenspach, R.

    2008-09-01

    Direct observation of current-induced propagation of purely transverse magnetic domain walls with spin-polarized scanning electron microscopy is reported in Fe30Ni70 nanowires. After propagation, the domain walls keep their transverse nature but switch polarity in some cases. For uniform Ni70Fe30 wires, the effect is random and illustrates domain-wall propagation above the Walker threshold. In the case of Ni70Fe30/Fe wires, the transverse magnetization component in the wall is entirely determined by the polarity of the current pulse, an effect that is not reconciled by present theories even when taking into account the nonuniform Oersted field generated by the current.

  10. Current density functional theory for optical spectra : A polarization functional

    NARCIS (Netherlands)

    Boeij, P.L. de; Kootstra, F.; Berger, J.A.; Leeuwen, R. van; Snijders, J.G.

    2001-01-01

    In this paper we present a new approach to calculate optical spectra, which for the first time uses a polarization dependent functional within current density functional theory (CDFT), which was proposed by Vignale and Kohn. This polarization dependent functional includes exchange-correlation (xc)

  11. Floating Inductance and FDNR Using Positive Polarity Current Conveyors

    Directory of Open Access Journals (Sweden)

    K. Pal

    2004-01-01

    Full Text Available A generalized circuit based on five positive polarity second-generation current conveyors is introduced. The circuit simulates a floating inductance, capacitor floatation circuit and floating fdnr. All these circuits use grounded capacitors.

  12. First-principles theory of inelastic currents in a scanning tunneling microscope

    DEFF Research Database (Denmark)

    Stokbro, Kurt; Hu, Ben Yu-Kuang; Thirstrup, C.

    1998-01-01

    A first-principles theory of inelastic tunneling between a model probe tip and an atom adsorbed on a surface is presented, extending the elastic tunneling theory of Tersoff and Hamann. The inelastic current is proportional to the change in the local density of states at the center of the tip due...... to the addition of the adsorbate. We use the theory to investigate the vibrational heating of an adsorbate below a scanning tunneling microscopy tip. We calculate the desorption rate of PI from Si(100)-H(2 X 1) as a function of the sample bias and tunnel current, and find excellent a,agreement with recent...

  13. High Current Density InAsSb/GaSb Tunnel Field Effect Transistors

    OpenAIRE

    Dey, Anil; Borg, Mattias; Ganjipour, Bahram; Ek, Martin; Dick Thelander, Kimberly; Lind, Erik; Nilsson, Peter; Thelander, Claes; Wernersson, Lars-Erik

    2012-01-01

    Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest due to their potential for low power operation at room temperature. The devices are based on inter-band tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band tunneling without a barrier, allowing high on-currents. We ha...

  14. Valley current characterization of high current density resonant tunnelling diodes for terahertz-wave applications

    Science.gov (United States)

    Jacobs, K. J. P.; Stevens, B. J.; Baba, R.; Wada, O.; Mukai, T.; Hogg, R. A.

    2017-10-01

    We report valley current characterisation of high current density InGaAs/AlAs/InP resonant tunnelling diodes (RTDs) grown by metal-organic vapour phase epitaxy (MOVPE) for THz emission, with a view to investigate the origin of the valley current and optimize device performance. By applying a dual-pass fabrication technique, we are able to measure the RTD I-V characteristic for different perimeter/area ratios, which uniquely allows us to investigate the contribution of leakage current to the valley current and its effect on the PVCR from a single device. Temperature dependent (20 - 300 K) characteristics for a device are critically analysed and the effect of temperature on the maximum extractable power (PMAX) and the negative differential conductance (NDC) of the device is investigated. By performing theoretical modelling, we are able to explore the effect of typical variations in structural composition during the growth process on the tunnelling properties of the device, and hence the device performance.

  15. Optimized electrode configuration for current-in-plane characterization of magnetic tunnel junction stacks

    DEFF Research Database (Denmark)

    Cagliani, Alberto; Kjær, Daniel; Østerberg, Frederik Westergaard

    2017-01-01

    The current-in-plane tunneling technique (CIPT) has been a crucial tool in the development of magnetic tunnel junction stacks suitable for magnetic random access memories (MRAM) for more than a decade. The MRAM development has now reached the maturity to make the transition from the R&D phase to ...... of electrodes on a multi-electrode probe to reach up to 36% improvement on the repeatability for the resistance area product and the tunneling magnetoresistance measurement, without any hardware modification....

  16. Spin-filter scanning tunneling microscopy : a novel technique for the analysis of spin polarization on magnetic surfaces and spintronic devices

    NARCIS (Netherlands)

    Vera Marun, I.J.

    2010-01-01

    This thesis deals with the development of a versatile technique to measure spin polarization with atomic resolution. A microscopy technique that can measure electronic spin polarization is relevant for characterization of magnetic nanostructures and spintronic devices. Scanning tunneling microscopy

  17. Distilling two-center-interference information during tunneling of aligned molecules with orthogonally polarized two-color laser fields

    Science.gov (United States)

    Gao, F.; Chen, Y. J.; Xin, G. G.; Liu, J.; Fu, L. B.

    2017-12-01

    When electrons tunnel through a barrier formed by the strong laser field and the two-center potential of a diatomic molecule, a double-slit-like interference can occur. However, this interference effect can not be probed directly right now, as it is strongly coupled with other dynamical processes during tunneling. Here, we show numerically and analytically that orthogonally polarized two-color (OTC) laser fields are capable of resolving the interference effect in tunneling, while leaving clear footprints of this effect in photoelectron momentum distributions. Moreover, this effect can be manipulated by changing the relative field strength of OTC fields.

  18. Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

    Science.gov (United States)

    Lund, Cory; Romanczyk, Brian; Catalano, Massimo; Wang, Qingxiao; Li, Wenjun; DiGiovanni, Domenic; Kim, Moon J.; Fay, Patrick; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

    2017-05-01

    In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling properties of such films. Uniform InGaN/GaN multiple quantum well stacks with indium compositions up to 0.46 were grown with local compositional analysis performed by energy-dispersive X-ray spectroscopy within a scanning transmission electron microscope. Bright room-temperature photoluminescence up to 600 nm was observed for films with indium compositions up to 0.35. To study the tunneling behavior of the InGaN layers, N-polar GaN/In0.35Ga0.65N/GaN tunnel diodes were fabricated which reached a maximum current density of 1.7 kA/cm2 at 5 V reverse bias. Temperature-dependent measurements are presented and confirm tunneling behavior under reverse bias.

  19. Attoclock reveals natural coordinates of the laser-induced tunnelling current flow in atoms

    DEFF Research Database (Denmark)

    Pfeiffer, Adrian N.; Cirelli, Claudio; Smolarski, Mathias

    2012-01-01

    In the research area of strong-laser-field interactions and attosecond science1, tunnelling of an electron through the barrier formed by the electric field of the laser and the atomic potential is typically assumed to be the initial key process that triggers subsequent dynamics1, 2, 3. Here we use...... the attoclock technique4 to obtain experimental information about the electron tunnelling geometry (the natural coordinates of the tunnelling current flow) and exit point. We confirm vanishing tunnelling delay time, show the importance of the inclusion of Stark shifts5, 6 and report on multi-electron effects...

  20. Effect of the Debye screening on the tunnel current through simple electrochemical bridged contact

    DEFF Research Database (Denmark)

    Kuznetsov, A.M.; Medvedev, Oleg; Ulstrup, Jens

    2008-01-01

    General equations for tunnel current through electrochemical contact containing a redox-center in molecular bridge group are observed with allowing for potential distribution in the tunnel gap. Simple approximate expressions appropriate for the analysis of experimental data are also derived. The ...

  1. Featuring of transient tunneling current by voltage pulse and application to an electrochemical biosensor

    Science.gov (United States)

    Yun, Jun Yeon; Lee, Won Cheol; Choi, Seong Wook; Park, Young June

    2018-03-01

    We suggest a voltage pulse method for detecting the transient tunneling current component (faradaic current component) in a metal/redox-active monolayer/electrolyte system. After applying the pulse to the metal electrode, the capacitive current prevails; therefore, it is difficult to extract the tunneling current, which carries information on the biochemical reactions occurring between the biomarkers in the electrolyte and the self-assembled monolayer (SAM) as the probe peptide system. Instead of waiting until the capacitive current diminishes, and thereby, the tunneling current also decreases, we try to extract the tunneling current in an early stage of the pulse. The method is based on the observation that the capacitive current becomes symmetrized in the positive and negative pulses after introducing the SAM on the metal electrode. When the energy level of the redox molecule is higher than the Fermi level of the metal under zero-bias condition, the tunneling current in the negative pulse can be extracted by subtracting the capacitive current obtained from the positive pulse, where the tunneling current is neglected. The experiment conducted for detecting trypsin as a biomarker shows that the method enhances the sensitivity and the specific-to-nonspecific ratio of the sensor device in the case of the nonspecific protein-abundant electrolyte solution, as evinced by cyclic voltammetry measurements in comparison.

  2. All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

    Science.gov (United States)

    Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

    2011-04-01

    A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

  3. Macroscopic quantum tunnelling in a current biased Josephson junction

    International Nuclear Information System (INIS)

    Martinis, J.M.; Devoret, M.H.; Clarke, J.; Urbina, C.

    1984-11-01

    We discuss in this work an attempt to answer experimentally the question: do macroscopic variables obey quantum mechanics. More precisely, this experiment deals with the question of quantum-mechanical tunnelling of a macroscopic variable, a subject related to the famous Schrodinger's cat problem in the theory of measurement

  4. The impact of structural relaxation on spin polarization and magnetization reversal of individual nano structures studied by spin-polarized scanning tunneling microscopy.

    Science.gov (United States)

    Sander, Dirk; Phark, Soo-Hyon; Corbetta, Marco; Fischer, Jeison A; Oka, Hirofumi; Kirschner, Jürgen

    2014-10-01

    The application of low temperature spin-polarized scanning tunneling microscopy and spectroscopy in magnetic fields for the quantitative characterization of spin polarization, magnetization reversal and magnetic anisotropy of individual nano structures is reviewed. We find that structural relaxation, spin polarization and magnetic anisotropy vary on the nm scale near the border of a bilayer Co island on Cu(1 1 1). This relaxation is lifted by perimetric decoration with Fe. We discuss the role of spatial variations of the spin-dependent electronic properties within and at the edge of a single nano structure for its magnetic properties.

  5. The role of polarization current in magnetic island evolution

    International Nuclear Information System (INIS)

    Connor, J.W.; Waelbroeck, F.L.; Wilson, H.R.

    2001-01-01

    The polarization current plays an important role in the evolution of magnetic islands with a width comparable to the characteristic ion orbit width. Understanding the evolution of such small magnetic islands is important for two reasons: (1) to investigate the threshold mechanisms for growth of large-scale islands (e.g., neoclassical tearing modes), and (2) to describe the drive mechanisms for small-scale magnetic turbulence and consequent transport. This article presents a two-fluid, cold ion, collisional analysis of the role of the polarization current in magnetic island evolution in slab geometry. It focuses on the role played by the conjunction of parallel electron dynamics and perpendicular transport (particle diffusion and viscosity) in determining the island rotation frequency and the distribution of the polarization current within the island

  6. Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.

    Science.gov (United States)

    Wang, Mengxing; Cai, Wenlong; Cao, Kaihua; Zhou, Jiaqi; Wrona, Jerzy; Peng, Shouzhong; Yang, Huaiwen; Wei, Jiaqi; Kang, Wang; Zhang, Youguang; Langer, Jürgen; Ocker, Berthold; Fert, Albert; Zhao, Weisheng

    2018-02-14

    Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 Ω µm 2 , which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high-temperature diffusion during annealing. The critical switching current density could be lower than 3.0 MA cm -2 for devices with a 45-nm radius.

  7. Tunneling Current of Electron in Armchair Graphene Nanoribbon Bipolar Transistor Model Using Transfer Matrix Method

    Science.gov (United States)

    Fahmi, A. K.; Hasanah, L.; Rusdiana, D.; Aminudin, A.; Suhendi, E.

    2017-03-01

    The tunneling current of n-p-n bipolar junction transistor AGNR-based is modeled with semi-numerical method. The exponential solution from Schrödinger equation is used and solved analytically. The potential profile of n-p-n BJT divided into several segments in the numerical method. Then, the solved analytical result is used in the numerical method to compute the electron transmittance. Transfer Matrix Method (TMM) is the numerical method used to compute the electron transmittance. From the calculated transmittance the tunneling current can be computed by using Landauer formula with aid of Gauss-Legendre Quadrature (GLQ). Next, the tunneling current is computed with several change of variables which are base-emitter voltage (VBE), base-collector voltage (VBC), temperature and the AGNR’s width. The computed tunneling current shows that the larger value of applied voltage for both VBE and VBC results in larger value of tunneling current. At the lower temperature, the current is larger. The computed tunneling current shows that at wider width of AGNR, the current is also larger. This is due to the decreased band-gap energy (Eg) because of the wider width of AGNR.

  8. Spin-polarized scanning tunneling microscopy and spectroscopy study of chromium on a Cr(001) surface.

    Science.gov (United States)

    Lagoute, J; Kawahara, S L; Chacon, C; Repain, V; Girard, Y; Rousset, S

    2011-02-02

    Several tens of chromium layers were deposited at 250 °C on a Cr(001) surface and investigated by spin-polarized scanning tunneling microscopy (SP-STM), Auger electron spectroscopy (AES) and scanning tunneling spectroscopy (STS). Chromium is found to grow with a mound-like morphology resulting from the stacking of several monolayers which do not uniformly cover the whole surface of the substrate. The terminal plane consists of an irregular array of Cr islands with lateral sizes smaller than 20 × 20 nm(2). Combined AES and STS measurements reveal the presence of a significant amount of segregants prior to and after deposition. A detailed investigation of the surface shows that it consists of two types of patches. Thanks to STS measurements, the two types of area have been identified as being either chromium pure or segregant rich. SP-STM experiments have evidenced that the antiferromagnetic layer coupling remains in the chromium mounds after deposition and is not significantly affected by the presence of the segregants.

  9. The effect of polarized polychromatic noncoherent light (bioptron) therapy on patients with carpal tunnel syndrome.

    Science.gov (United States)

    Raeissadat, Seyed Ahmad; Rayegani, Seyed Mansoor; Rezaei, Sajad; Sedighipour, Leyla; Bahrami, Mohammad Hasan; Eliaspour, Dariush; Karimzadeh, Afshin

    2014-01-01

    To study the effects of Polarized Polychromatic Noncoherent Light (Bioptron) therapy on patients with carpal tunnel syndrome (CTS). This study was designed as a randomized clinical trial. Forty four patients with mild or moderate CTS (confirmed by clinical and electrodiagnostic studies) were assigned randomly into two groups (intervention and control goups). At the beginning of the study, both groups received wrist splinting for 8 weeks. Bioptron light was applied for the intervention group (eight sessions, for 3/weeks). Bioptron was applied perpendicularly to the wrist from a 10 centimeter sdistance. Pain severity and electrodiagnostic measurements were compared from before to 8 weeks after initiating each treatment. Eight weeks after starting the treatments, the mean of pain severity based on Visual Analogue Scale (VAS) scores decreased significantly in both groups. Median Sensory Nerve Action Potential (SNAP) latency decreased significantly in both groups. However, other electrophysiological findings (median Compound Motor Action Potential (CMAP) latency and amplitude, also SNAP amplitude) did not change after the therapy in both groups. There was no meaningful difference between two groups regarding the changes in the pain severity. Bioptron with the above mentioned parameters led to therapeutic effects equal to splinting alone in patients with carpal tunnel syndrome. However, applying Bioptron with different therapeutic protocols and light parameters other than used in this study, perhaps longer duration of therapy and long term assessment may reveal different results favoring Bioptron therapy.

  10. Current perpendicular to plane giant magnetoresistance and tunneling magnetoresistance treated with unified model

    NARCIS (Netherlands)

    Jonkers, PAE

    2002-01-01

    The conceptual similarity between current perpendicular to plane giant magnetoresistance (CPP-GMR) and tunneling magnetoresistance (TMR) is exploited by utilizing a unified single-particle model accounting for both types of magnetoresistance. By defining structures composed of ferromagnetic,

  11. Magnetic switching of a single molecular magnet due to spin-polarized current

    Science.gov (United States)

    Misiorny, Maciej; Barnaś, Józef

    2007-04-01

    Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic leads (electrodes) is investigated theoretically. Magnetic moments of the leads are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through the barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system, as well as the spin relaxation times of the SMM, are calculated from the Fermi golden rule. It is shown that spin of the SMM can be reversed by applying a certain voltage between the two magnetic electrodes. Moreover, the switching may be visible in the corresponding current-voltage characteristics.

  12. Magnitude of the Current in Two-Dimensional Interlayer Tunneling Devices.

    Science.gov (United States)

    Feenstra, Randall; de la Barrera, Sergio; Li, Jun; Nie, Yifan; Cho, Kyeongjae

    2018-01-02

    Using the Bardeen tunneling method with first-principles wave functions, computations are made of the tunneling current in graphene / hexagonal-boron-nitride / graphene (G/h-BN/G) vertical structures. Detailed comparison with prior experimental results is made, focusing on the magnitude of the achievable tunnel current. With inclusion of the effects of translational and rotational misalignment of the graphene and the h-BN, predicted currents are found to be about 15x larger than experimental values. A reduction in this discrepancy, to a factor of 2.5x, is achieved by utilizing a realistic size for the band gap of the h-BN, hence affecting the exponential decay constant for the tunneling. © 2018 IOP Publishing Ltd.

  13. Ultrafast terahertz control of extreme tunnel currents through single atoms on a silicon surface

    DEFF Research Database (Denmark)

    Jelic, Vedran; Iwaszczuk, Krzysztof; Nguyen, Peter H.

    2017-01-01

    Ultrafast control of current on the atomic scale is essential for future innovations in nanoelectronics. Extremely localized transient electric fields on the nanoscale can be achieved by coupling picosecond duration terahertz pulses to metallic nanostructures. Here, we demonstrate terahertz...... scanning tunnelling microscopy (THz-STM) in ultrahigh vacuum as a new platform for exploring ultrafast non-equilibrium tunnelling dynamics with atomic precision. Extreme terahertz-pulse-driven tunnel currents up to 10(7) times larger than steady-state currents in conventional STM are used to image...... individual atoms on a silicon surface with 0.3nm spatial resolution. At terahertz frequencies, the metallic-like Si(111)-(7 x 7) surface is unable to screen the electric field from the bulk, resulting in a terahertz tunnel conductance that is fundamentally different than that of the steady state. Ultrafast...

  14. Concentration polarization, surface currents, and bulk advection in a microchannel

    DEFF Research Database (Denmark)

    Nielsen, Christoffer Peder; Bruus, Henrik

    2014-01-01

    We present a comprehensive analysis of salt transport and overlimiting currents in a microchannel during concentration polarization. We have carried out full numerical simulations of the coupled Poisson-Nernst-Planck-Stokes problem governing the transport and rationalized the behavior of the syst...... as in the limit of negligible surface charge. By including the effects of diffusion and advection in the diffuse part of the electric double layers, we extend a recently published analytical model of overlimiting current due to surface conduction....

  15. Tunneling current noise spectra of biased impurity with a phonon mode

    International Nuclear Information System (INIS)

    Maslova, N. S.; Arseev, P. I.; Mantsevich, V. N.

    2016-01-01

    We report the results of theoretical investigations of the tunneling current noise spectra through a single-level impurity both in the presence and in the absence of electron–phonon interaction based on the nonequilibrium Green’s functions formalism. We show that due to the quantum nature of tunneling, the Fano factor is dramatically different from the Poisson limit both in the presence and in the absence of inelastic processes. The results are demonstrated to be sensitive to the tunneling contact parameters.

  16. Treatment of carpal tunnel syndrome with polarized polychromatic noncoherent light (Bioptron light): a preliminary, prospective, open clinical trial.

    Science.gov (United States)

    Stasinopoulos, D; Stasinopoulos, I; Johnson, M I

    2005-04-01

    Our aim was to assess the efficacy of polarized polychromatic noncoherent light (Bioptron light) in the treatment of idiopathic carpal tunnel syndrome. Carpal tunnel syndrome is the most common compression neuropathy, but no satisfactory conservative treatment is available at present. An uncontrolled experimental study was conducted in patients who visited our clinic from mid-2001 to mid-2002. A total of 25 patients (22 women and three men) with unilateral idiopathic carpal tunnel syndrome, mild to moderate nocturnal pain, and paraesthesia lasting >3 months participated in the study. The average age of the patients was 47.4 years and the average duration of patients' symptoms was 5.2 months. Polarized polychromatic noncoherent light (Bioptron light) was administered perpendicular to the carpal tunnel area. The irradiation time for each session was 6 min at an operating distance of 5-10 cm from the carpal tunnel area, three times weekly for 4 weeks. Outcome measures used were the participants' global assessments of nocturnal pain and paraesthesia, respectively, at 4 weeks and 6 months. At 4 weeks, two patients (8%) had no change in nocturnal pain, six (24%) were in slightly less nocturnal pain, 12 (48%) were much better in regard to nocturnal pain and five (20%) were pain-free. At 6 months, three patients (12%) were slightly better in regard to nocturnal pain, 13 (52%) were much better regarding nocturnal pain, and nine patients (36%) were pain-free. At 4 weeks, four patients (16%) had no change in paraesthesia, five (20%) were slightly better, 13 patients (52%) were much better, and three patients (12%) were without paraesthesia. At 6 months, two patients (8%) had no change in paraesthesia, two (8%) were slightly better, 14 (56%) were much better, and seven (28%) were without paraesthesia. Nocturnal pain and paraesthesia associated with idiopathic carpal tunnel syndrome improved during polarized polychromatic noncoherent light (Bioptron light) treatment. Controlled

  17. Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.

    Science.gov (United States)

    Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, G

    2013-08-27

    Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.

  18. Charge and spin current oscillations in a tunnel junction induced by magnetic field pulses

    Energy Technology Data Exchange (ETDEWEB)

    Dartora, C.A., E-mail: cadartora@eletrica.ufpr.br [Electrical Engineering Department, Federal University of Parana (UFPR), C.P. 19011 Curitiba, 81.531-970 PR (Brazil); Nobrega, K.Z., E-mail: bzuza1@yahoo.com.br [Federal Institute of Education, Science and Technolgy of Maranhão (IFMA), Av. Marechal Castelo Branco, 789, São Luís, 65.076-091 MA (Brazil); Cabrera, G.G., E-mail: cabrera@ifi.unicamp.br [Instituto de Física ‘Gleb Wataghin’, Universidade Estadual de Campinas (UNICAMP), C.P. 6165, Campinas 13.083-970 SP (Brazil)

    2016-08-15

    Usually, charge and spin transport properties in tunnel junctions are studied in the DC bias regime and/or in the adiabatic regime of time-varying magnetic fields. In this letter, the temporal dynamics of charge and spin currents in a tunnel junction induced by pulsed magnetic fields is considered. At low bias voltages, energy and momentum of the conduction electrons are nearly conserved in the tunneling process, leading to the description of the junction as a spin-1/2 fermionic system coupled to time-varying magnetic fields. Under the influence of pulsed magnetic fields, charge and spin current can flow across the tunnel junction, displaying oscillatory behavior, even in the absence of DC bias voltage. A type of spin capacitance function, in close analogy to electric capacitance, is predicted.

  19. Theoretical investigation into negative differential resistance characteristics of resonant tunneling diodes based on lattice-matched and polarization-matched AlInN/GaN heterostructures

    Science.gov (United States)

    Rong, Taotao; Yang, Lin-An; Yang, Lin; Hao, Yue

    2018-01-01

    In this work, we report an investigation of resonant tunneling diodes (RTDs) with lattice-matched and polarization-matched AlInN/GaN heterostructures using the numerical simulation. Compared with the lattice-matched AlInN/GaN RTDs, the RTDs based on polarization-matched AlInN/GaN hetero-structures exhibit symmetrical conduction band profiles due to eliminating the polarization charge discontinuity, which achieve the equivalence of double barrier transmission coefficients, thereby the relatively high driving current, the high symmetry of current density, and the high peak-to-valley current ratio (PVCR) under the condition of the positive and the negative sweeping voltages. Simulations show that the peak current density approaches 1.2 × 107 A/cm2 at the bias voltage of 0.72 V and the PVCR approaches 1.37 at both sweeping voltages. It also shows that under the condition of the same shallow energy level, when the trap density reaches 1 × 1019 cm-3, the polarization-matched RTDs still have acceptable negative differential resistance (NDR) characteristics, while the NDR characteristics of lattice-matched RTDs become irregular. After introducing the deeper energy level of 1 eV into the polarization-matched and lattice-matched RTDs, 60 scans are performed under the same trap density. Simulation results show that the degradation of the polarization-matched RTDs is 22%, while lattice-matched RTDs have a degradation of 55%. It can be found that the polarization-matched RTDs have a greater defect tolerance than the lattice-matched RTDs, which is beneficial to the available manufacture of actual terahertz RTD devices.

  20. Spin-polarized scanning tunneling spectroscopy of self-organized nanoscale Co islands on Au(111) surfaces.

    Science.gov (United States)

    Schouteden, K; Muzychenko, D A; Van Haesendonck, C

    2008-07-01

    Magnetic monolayer and bilayer Co islands of only a few nanometer in size were grown by atomic deposition on atomically flat Au(111) films. The islands were studied in situ by scanning tunneling microscopy (STM) and spectroscopy at low temperatures. Spin-resolved tunneling spectroscopy, using an STM tip with a magnetic coating, revealed that the Co islands exhibit a net magnetization perpendicular to the substrate surface due to the presence of spin-polarized d-states. A random distribution of islands with either upward or downward pointing magnetization was observed, without any specific correlation of magnetization orientation with island size or island height.

  1. Periodicity of resonant tunneling current induced by the Stark resonances in semiconductor nanowire

    Science.gov (United States)

    Wołoszyn, M.; Adamowski, J.; Wójcik, P.; Spisak, B. J.

    2013-10-01

    The modification of the electronic current resulting from Stark resonances has been studied for the semiconductor nanowire with the double-barrier structure. Based on the calculated current-voltage characteristics, we have shown that the resonant tunneling current is a periodic function of the width of the spacer layer. We have also demonstrated that the simultaneous change of the source-drain voltage and the voltage applied to the gate located near the nanowire leads to almost periodic changes of the resonant tunneling current as a function of the source-drain and gate voltages. The periodic properties of the resonant tunneling current result from the formation of the Stark resonance states. If we change the electric field acting in the nanowire, the Stark states periodically acquire the energies from the transport window and enhance the tunneling current in a periodic manner. We have found that the separations between the resonant current peaks on the source-drain voltage scale can be described by a slowly increasing linear function of the Stark state quantum number. This allows us to identify the quantum states that are responsible for the enhancement of the resonant tunneling. We have proposed a method of the experimental observation of the Stark resonances in semiconductor double-barrier heterostructures.

  2. The effect of current-induced spin switching in the presence of quantum tunneling of magnetization

    Science.gov (United States)

    Misiorny, Maciej; Barnaś, Józef

    2013-03-01

    Knowledge of transport properties of individual large-spin (S > 1 / 2) atoms/molecules exhibiting magnetic anisotropy is of key importance from the point of view of information processing technologies. The ultimate aim is to incorporate such objects as functional elements of spintronic devices, with the objective of employing spin-polarized currents to control the magnetic state of the system. In particular, for an atom/molecule with the predominant `easy-axis' uniaxial magnetic anisotropy this allows for switching the system's spin between two metastable states. However, the uniaxial component of magnetic anisotropy, underlying the magnetic bistability, is frequently accompanied by the transverse one, whose presence manifests, e.g., as quantum tunneling of magnetization (QTM). Here, we show that not only does QTM induce an effective energy barrier for the spin switching, but also its effect on the transport reveals as an additional signal in transport characteristics. Furthermore, we propose how to experimentally investigate QTM by means of the STM inelastic transport spectroscopy. also at Adam Mickiewicz University

  3. Effects of polarization field on vertical transport in GaN/AlGaN resonant tunneling diodes

    International Nuclear Information System (INIS)

    Park, Seoung-Hwan; Shim, Jong-In

    2012-01-01

    Polarization-field effects on the vertical transport in GaN/AlGaN resonant tunneling diodes (RTDs) were theoretically investigated by using the transfer matrix formalism. The self-consistent model shows that the resonant peaks are shifted toward higher energies with increasing Al composition in the AlGaN barrier, and the transmission probability values are shown to decrease rapidly. In the case of the flat-band model, on the other hand, the shift of the resonant peaks is smaller than it is for the self-consistent model and the variation of transmission probability values with increasing Al composition is relatively smaller than that of the self-consistent model. The current voltage characteristics of the self-consistent model are asymmetric while those of the flat-band model are symmetric for positive and negative current directions. The peak-to-valley ratio (PVR) of the self-consistent model is shown to be slightly smaller than that of the flat-band model for Al = 0.3.

  4. Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes

    Science.gov (United States)

    H, Dakhlaoui; S, Almansour

    2016-06-01

    In this work, the electronic properties of resonant tunneling diodes (RTDs) based on GaN-Al x Ga(1-x)N double barriers are investigated by using the non-equilibrium Green functions formalism (NEG). These materials each present a wide conduction band discontinuity and a strong internal piezoelectric field, which greatly affect the electronic transport properties. The electronic density, the transmission coefficient, and the current-voltage characteristics are computed with considering the spontaneous and piezoelectric polarizations. The influence of the quantum size on the transmission coefficient is analyzed by varying GaN quantum well thickness, Al x Ga(1-x)N width, and the aluminum concentration x Al. The results show that the transmission coefficient more strongly depends on the thickness of the quantum well than the barrier; it exhibits a series of resonant peaks and valleys as the quantum well width increases. In addition, it is found that the negative differential resistance (NDR) in the current-voltage (I-V) characteristic strongly depends on aluminum concentration x Al. It is shown that the peak-to-valley ratio (PVR) increases with x Al value decreasing. These findings open the door for developing vertical transport nitrides-based ISB devices such as THz lasers and detectors. Project supported by the Deanship of Scientific Research of University of Dammam (Grant No. 2014137).

  5. Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures

    Science.gov (United States)

    Davidović, D.; Ying, H.; Dark, J.; Wier, B. R.; Ge, L.; Lourenco, N. E.; Omprakash, A. P.; Mourigal, M.; Cressler, J. D.

    2017-08-01

    Quantum-transport measurements in advanced silicon-germanium heterojunction bipolar transistors (SiGe HBTs) are presented and analyzed, including tunneling spectroscopy of discrete impurity levels localized within the transistor and the dependence on an applied magnetic field. The collector current at millikelvin temperatures is well accounted for by ideal electron tunneling throughout the entire base. The amplification principle at millikelvin temperatures is fundamentally quantum mechanical in nature: an increase in base voltage, requiring a moderate base current, creates an equal and opposite decrease in the tunneling barrier seen by the electrons in the emitter, thereby increasing the collector current significantly more than the base current, producing current gain. Highly scaled SiGe HBTs operate predictably at millikelvin temperatures, thus opening the possibility of viable SiGe millikelvin circuitry.

  6. Influence of collision frequency on neoclassical polarization current

    Energy Technology Data Exchange (ETDEWEB)

    Imada, K; Wilson, H R, E-mail: ki504@york.ac.u [Department of Physics, University of York, Heslington, York YO10 5DD (United Kingdom)

    2009-10-15

    A kinetic theory for the evolution of magnetic islands is considered in a tokamak plasma, in both the low (nu{sub i} << epsilonomega) and high (nu{sub i} >> epsilonomega) collision frequency limits (nu{sub i} is the ion collision frequency, epsilon is the inverse aspect ratio and omega is the island propagation frequency in the E x B rest frame). The calculation of the bootstrap current perturbation in the presence of a magnetic island is reviewed, and is confirmed to be independent of omega and the collision frequency regime. The neoclassical polarization current perturbation is calculated in the two collision frequency limits (within the banana regime). The result in the collisional limit is in agreement with a fluid theory. The effect of collisions in the 'dissipation layer' at the trapped/passing boundary is also considered, for nu{sub i} << epsilonomega. It is found that the dissipation layer provides an additional contribution to the neoclassical polarization current perturbation. Consequently, if the polarization current is stabilizing, it provides a critical island width for instability, which is found to scale as [1+rsq rootnu{sub i}/epsilonomega]{sup 1/2}, where r is a weak logarithmic function of sq rootnu{sub i}/epsilonomega.

  7. Semiclassical description of resonant tunnel effect: bifurcations and periodic orbits in the resonant current

    International Nuclear Information System (INIS)

    Rouben, D.C.

    1997-01-01

    A semiclassical method for resonant tunneling in a quantum well in the presence of a magnetic field tilted with regard to an electric field is developed. In particular a semiclassical formula is derived for the total current of electrons after the second barrier of the quantum well. The contribution of the stable and unstable orbits is studied. It appears that the parameters which describe the classical chaos in the quantum well have an important effect on the tunneling current. A numerical experiment is led, the contributions to the current of some particular orbits are evaluated and the results are compared with those given by the quantum theory. (A.C.)

  8. Spin-polarized scanning tunneling microscopy with quantitative insights into magnetic probes.

    Science.gov (United States)

    Phark, Soo-Hyon; Sander, Dirk

    2017-01-01

    Spin-polarized scanning tunneling microscopy and spectroscopy (spin-STM/S) have been successfully applied to magnetic characterizations of individual nanostructures. Spin-STM/S is often performed in magnetic fields of up to some Tesla, which may strongly influence the tip state. In spite of the pivotal role of the tip in spin-STM/S, the contribution of the tip to the differential conductance d I /d V signal in an external field has rarely been investigated in detail. In this review, an advanced analysis of spin-STM/S data measured on magnetic nanoislands, which relies on a quantitative magnetic characterization of tips, is discussed. Taking advantage of the uniaxial out-of-plane magnetic anisotropy of Co bilayer nanoisland on Cu(111), in-field spin-STM on this system has enabled a quantitative determination, and thereby, a categorization of the magnetic states of the tips. The resulting in-depth and conclusive analysis of magnetic characterization of the tip opens new venues for a clear-cut sub-nanometer scale spin ordering and spin-dependent electronic structure of the non-collinear magnetic state in bilayer high Fe nanoislands on Cu(111).

  9. Current response of ac-driven nanoelectromechanical systems in single-electron tunneling regime

    OpenAIRE

    Labadze, G.; Blanter, Ya. M.

    2010-01-01

    We investigate electric current in a single-electron tunnelling device weakly coupled to an ac-driven underdamped harmonic nanomechanical oscillator. In the linear regime, the current can respond to the external frequency in a resonant as well as in an anti-resonant fashion. The main resonance is accompanied by an additional resonance at a half of the external frequency.

  10. Fourier analysis of polar cap electric field and current distributions

    Science.gov (United States)

    Barbosa, D. D.

    1984-01-01

    A theoretical study of high-latitude electric fields and currents, using analytic Fourier analysis methods, is conducted. A two-dimensional planar model of the ionosphere with an enhanced conductivity auroral belt and field-aligned currents at the edges is employed. Two separate topics are treated. A field-aligned current element near the cusp region of the polar cap is included to investigate the modifications to the convection pattern by the east-west component of the interplanetary magnetic field. It is shown that a sizable one-cell structure is induced near the cusp which diverts equipotential contours to the dawnside or duskside, depending on the sign of the cusp current. This produces characteristic dawn-dusk asymmetries to the electric field that have been previously observed over the polar cap. The second topic is concerned with the electric field configuration obtained in the limit of perfect shielding, where the field is totally excluded equatorward of the auroral oval. When realistic field-aligned current distributions are used, the result is to produce severely distorted, crescent-shaped equipotential contours over the cap. Exact, analytic formulae applicable to this case are also provided.

  11. High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

    OpenAIRE

    Dey, Anil; Borg, Mattias; Ganjipour, Bahram; Ek, Martin; Dick Thelander, Kimberly; Lind, Erik; Thelander, Claes; Wernersson, Lars-Erik

    2013-01-01

    We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high ON-current levels. We report a maximum drive current of 310 μA/μm at Vds = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at Vds = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction...

  12. Josephson current at atomic scale: Tunneling and nanocontacts using a STM

    International Nuclear Information System (INIS)

    Rodrigo, J.G.; Crespo, V.; Vieira, S.

    2006-01-01

    Using a scanning tunneling microscope, STM, with a superconducting tip, we have measured the Josephson current in atomic size tunnel junctions and contacts with a small number of quantum channels of conduction. We analyze our results in terms of the Ivanchenko and Zil'berman model for phase diffusion. The effect of the thermal energy and the electromagnetic environment on the Josephson current is discussed in terms of the transmissions of the individual quantum channels. These results suppose an initial step to the control of Scanning Josephson Spectroscopy at atomic level

  13. H- ion current from a polarized vapor target

    International Nuclear Information System (INIS)

    Cornelius, W.D.

    1984-01-01

    A method of determining the polarization transferred to hydrogen atoms in charge-exchange reactions is outlined. The method also provides a means of determining target polarizations once the polarization transfer function is known

  14. Vortex domain structures and dc current dependence of magneto-resistances in magnetic tunnel junctions

    Science.gov (United States)

    Wei, Hong-Xiang; Lu, Qing-Feng; Zhao, Su-Fen; Zhang, Xie-Qun; Feng, Jia-Feng; Han, Xiu-Feng

    2004-09-01

    Microfabrication and the magneto-transport characteristics of the magnetic tunnel junctions (MTJs) with a spin-valve-type structure of Ta (5nm)/Ni79Fe21 (25nm)/Ir22Mn78 (12nm)/Co75Fe25 (4nm)/Al(0.8nm) oxide/Co75Fe25 (4nm)/Ni79Fe21 (20nm)/Ta(5nm) were investigated in this paper. A series of experimental data measured with a MTJ was used to verify a magnon-assisted tunnelling model and theory. Furthermore, a micromagnetics simulation shows that the butterfly-like vortex domain structures can be formed under a current-induced Oersted field, which decreases the net magnetization values of the ferromagnetic electrodes under a large dc current (i.e., in high voltage regimes). It is one of the main reasons for the tunnel magnetoresistance ratios to decrease significantly at high voltage biasing.

  15. Noise in tunneling spin current across coupled quantum spin chains

    OpenAIRE

    Aftergood, Joshua; Takei, So

    2017-01-01

    We theoretically study the spin current and its dc noise generated between two spin-1/2 spin chains weakly coupled at a single site in the presence of an over-population of spin excitations and a temperature elevation in one subsystem relative to the other, and compare the corresponding transport quantities across two weakly coupled magnetic insulators hosting magnons. In the spin chain scenario, we find that applying a temperature bias exclusively leads to a vanishing spin current and a conc...

  16. Tunneling currents between carbon nanotubes inside the 3-dimensional potential of a dielectric matrix

    Science.gov (United States)

    Tsagarakis, M. S.; Xanthakis, J. P.

    2017-07-01

    We have examined the tunneling currents between CNTs dispersed in a dielectric matrix as is normally the case in a tensile stress or toxic gas sensors. Due to the randomness of the immersion process the CNTs are at random angles and configurations between them, thus producing a 3-dimensional potential (3-D). We have produced a method that solves the Laplace equation for this type of problem and uses the WKB formulation to calculate the transmission coefficient between CNTs. We have then shown that the tunneling currents between a pair of CNTs depend critically on their relative angle and configuration. In particular we have shown that the tunneling currents do not occur only along a CNT tip to CNT tip configuration but other more efficient paths exist which give a current higher by two orders of magnitude from what a simple 1D theory would give. On the other hand the tunneling current between non-coplanar CNTs is negligible. We conclude that such phenomena cannot be analyzed by a simple 1-dimensional WKB theory and the percolation threshold necessary for conduction may be lower than the one such a theory would predict.

  17. Detection of current-driven magnetic domains in [Co/Pd] nanowire by tunneling magnetoresistive sensor

    Science.gov (United States)

    Okuda, Mitsunobu; Miyamoto, Yasuyoshi; Miyashita, Eiichi; Saito, Nobuo; Hayashi, Naoto; Nakagawa, Shigeki

    2015-05-01

    Current-driven magnetic domain walls in magnetic nanowires have attracted a great deal of interest in terms of both physical studies and engineering applications. The anomalous Hall effect measurement is widely used for detecting the magnetization direction of current-driven magnetic domains in a magnetic nanowire. However, the problem with this measurement is that the detection point for current-driven domain wall motion is fixed at only the installed sensing wire across the specimen nanowire. A potential solution is the magnetic domain scope method, whereby the distribution of the magnetic flux leaking from the specimen can be analyzed directly by contact-scanning a tunneling magnetoresistive field sensor on a sample. In this study, we fabricated specimen nanowires consisting of [Co (0.3)/Pd (1.2)]21/Ta(3) films (units in nm) with perpendicular magnetic anisotropy on Si substrates. A tunneling magnetoresistive sensor was placed on the nanowire surface and a predetermined current pulse was applied. Real-time detection of the current-driven magnetic domain motion was successful in that the resistance of the tunneling magnetoresistive sensor was changed with the magnetization direction beneath the sensor. This demonstrates that magnetic domain detection using a tunneling magnetoresistive sensor is effective for the direct analysis of micro magnetic domain motion.

  18. Noise in tunneling spin current across coupled quantum spin chains

    Science.gov (United States)

    Aftergood, Joshua; Takei, So

    2018-01-01

    We theoretically study the spin current and its dc noise generated between two spin-1 /2 spin chains weakly coupled at a single site in the presence of an over-population of spin excitations and a temperature elevation in one subsystem relative to the other, and we compare the corresponding transport quantities across two weakly coupled magnetic insulators hosting magnons. In the spin chain scenario, we find that applying a temperature bias exclusively leads to a vanishing spin current and a concomitant divergence in the spin Fano factor, defined as the spin current noise-to-signal ratio. This divergence is shown to have an exact analogy to the physics of electron scattering between fractional quantum Hall edge states and not to arise in the magnon scenario. We also reveal a suppression in the spin current noise that exclusively arises in the spin chain scenario due to the fermion nature of the spin-1/2 operators. We discuss how the spin Fano factor may be extracted experimentally via the inverse spin Hall effect used extensively in spintronics.

  19. Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes.

    Science.gov (United States)

    Sadaf, S M; Ra, Y-H; Nguyen, H P T; Djavid, M; Mi, Z

    2015-10-14

    The current LED lighting technology relies on the use of a driver to convert alternating current (AC) to low-voltage direct current (DC) power, a resistive p-GaN contact layer to inject positive charge carriers (holes) for blue light emission, and rare-earth doped phosphors to down-convert blue photons into green/red light, which have been identified as some of the major factors limiting the device efficiency, light quality, and cost. Here, we show that multiple-active region phosphor-free InGaN nanowire white LEDs connected through a polarization engineered tunnel junction can fundamentally address the afore-described challenges. Such a p-GaN contact-free LED offers the benefit of carrier regeneration, leading to enhanced light intensity and reduced efficiency droop. Moreover, through the monolithic integration of p-GaN up and p-GaN down nanowire LED structures on the same substrate, we have demonstrated, for the first time, AC operated LEDs on a Si platform, which can operate efficiently in both polarities (positive and negative) of applied voltage.

  20. Current distribution effects in patterned non-linear magnetoresistive tunnel junctions

    CERN Document Server

    Montaigne, F; Schuhl, A

    2000-01-01

    To be used in submicronic devices like magnetic memories, magnetic tunnel junctions require low resistances. Four-probe measurements of such resistances are often altered by non-uniformity of the current distribution in the junction. The measured resistance is decreased by localised preferential conduction and increased by voltage drop in the measure electrode. Competition between these two effects is investigated as a function of the geometry. The non-linear conduction of tunnel junctions amplifies dramatically these phenomena and can modify by more than 50% the measured resistance.

  1. Electric double layer effect on observable characteristics of the tunnel current through a bridged electrochemical contact

    DEFF Research Database (Denmark)

    Kuznetsov, A.M.; Medvedev, I.G.; Ulstrup, Jens

    2007-01-01

    Scanning tunneling microscopy and electrical conductivity of redox molecules in conducting media (aqueous or other media) acquire increasing importance both as novel single-molecule science and with a view on molecular scale functional elements. Such configurations require full and independent...... electrodes. Simple approximate expressions better suited for experimental data analysis are also derived. Particular attention is given to the effects of the Debye screening of the electric potential in the narrow tunneling gap based on the limit of the linearized Poisson-Boltzmann equation. The current...

  2. Unified understanding of tunneling ionization and stabilization of atomic hydrogen in circularly and linearly polarized intense laser fields

    International Nuclear Information System (INIS)

    Miyagi, Haruhide; Someda, Kiyohiko

    2010-01-01

    On the basis of the Floquet formalism, the ionization mechanisms of atomic hydrogen in circularly and linearly polarized intense laser fields are discussed. By using the complex scaling method in the velocity gauge, the pole positions of the scattering-matrix on the complex quasienergy Riemann surface are calculated, and pole trajectories with respect to the variation of the laser intensity are obtained. In the low-frequency regime, the pole trajectory exhibits a smooth ponderomotive energy shift in the case of circular polarization. In contrast, the smoothness is lost in the case of linear polarization. In the high-frequency regime, the pole trajectories exhibit the stabilization phenomenon for both the types of polarization. These observations are elucidated by a unified picture based on the analysis of the adiabatic potentials for the radial motion of the electron in the acceleration gauge. The ionization in the case of circular polarization of the low-frequency regime is governed by the electron tunneling through a barrier of a single adiabatic potential. The stabilization in the high-frequency regime can be explained by the change in the avoided crossings among the adiabatic potential curves. The transition between the different frequency regimes is explicable by the change in the structure of the adiabatic potentials. The difference caused by the type of polarization is ascribable to the difference in the space-time symmetry.

  3. Hole dynamics and spin currents after ionization in strong circularly polarized laser fields

    International Nuclear Information System (INIS)

    Barth, Ingo; Smirnova, Olga

    2014-01-01

    We apply the time-dependent analytical R-matrix theory to develop a movie of hole motion in a Kr atom upon ionization by strong circularly polarized field. We find rich hole dynamics, ranging from rotation to swinging motion. The motion of the hole depends on the final energy and the spin of the photoelectron and can be controlled by the laser frequency and intensity. Crucially, hole rotation is a purely non-adiabatic effect, completely missing in the framework of quasistatic (adiabatic) tunneling theories. We explore the possibility to use hole rotation as a clock for measuring ionization time. Analyzing the relationship between the relative phases in different ionization channels we show that in the case of short-range electron-core interaction the hole is always initially aligned along the instantaneous direction of the laser field, signifying zero delays in ionization. Finally, we show that strong-field ionization in circular fields creates spin currents (i.e. different flow of spin-up and spin-down density in space) in the ions. This phenomenon is intimately related to the production of spin-polarized electrons in strong laser fields Barth and Smirnova (2013 Phys. Rev. A 88 013401). We demonstrate that rich spin dynamics of electrons and holes produced during strong field ionization can occur in typical experimental conditions and does not require relativistic intensities or strong magnetic fields. (paper)

  4. Out-of-equilibrium catalysis of chemical reactions by electronic tunnel currents.

    Science.gov (United States)

    Dzhioev, Alan A; Kosov, Daniel S; von Oppen, Felix

    2013-04-07

    We present an escape rate theory for current-induced chemical reactions. We use Keldysh nonequilibrium Green's functions to derive a Langevin equation for the reaction coordinate. Due to the out of equilibrium electronic degrees of freedom, the friction, noise, and effective temperature in the Langevin equation depend locally on the reaction coordinate. As an example, we consider the dissociation of diatomic molecules induced by the electronic current from a scanning tunnelling microscope tip. In the resonant tunnelling regime, the molecular dissociation involves two processes which are intricately interconnected: a modification of the potential energy barrier and heating of the molecule. The decrease of the molecular barrier (i.e., the current induced catalytic reduction of the barrier) accompanied by the appearance of the effective, reaction-coordinate-dependent temperature is an alternative mechanism for current-induced chemical reactions, which is distinctly different from the usual paradigm of pumping vibrational degrees of freedom.

  5. Magnetospheric convection and current system in the dayside polar cap

    International Nuclear Information System (INIS)

    Nishida, A.; Mukai, T.; Tsuruda, K.; Hayakawa, H.

    1992-01-01

    Field and particle observations on EXOS-D (Akebono) have yielded new information on convection and current system in the dayside polar cap. Convection patterns are distinctly different depending upon whether IMF B z is northward or southward. The number of convection cells is two when B z is southward but four when B z is northward. Lobe cells in which plasma flows sunward in the region of open field lines are observed as a pair (of which one is in the dawn and the other in the dusk sector) for any polarity of IMF B y and B z . Ions in the keV range precipitate not only in the dayside cusp region but also along the sunward directed streamlines of the dawn and dusk lobe cells. These observations require reconsideration on the position and the extent of the reconnection region on the magnetopause. They also suggest that the magnetotail plays a vital role in some phenomena which have been ascribed to dayside magnetopause processes. We have not been able to find evidence to prove the presence of the viscous cell under southward IMF

  6. Ultrafast demagnetization enhancement in CoFeB/MgO/CoFeB magnetic tunneling junction driven by spin tunneling current.

    Science.gov (United States)

    He, Wei; Zhu, Tao; Zhang, Xiang-Qun; Yang, Hai-Tao; Cheng, Zhao-Hua

    2013-10-07

    The laser-induced ultrafast demagnetization of CoFeB/MgO/CoFeB magnetic tunneling junction is exploited by time-resolved magneto-optical Kerr effect (TRMOKE) for both the parallel state (P state) and the antiparallel state (AP state) of the magnetizations between two magnetic layers. It was observed that the demagnetization time is shorter and the magnitude of demagnetization is larger in the AP state than those in the P state. These behaviors are attributed to the ultrafast spin transfer between two CoFeB layers via the tunneling of hot electrons through the MgO barrier. Our observation indicates that ultrafast demagnetization can be engineered by the hot electrons tunneling current. It opens the door to manipulate the ultrafast spin current in magnetic tunneling junctions.

  7. Scanning tunnelling microscope light emission: Finite temperature current noise and over cut-off emission.

    Science.gov (United States)

    Kalathingal, Vijith; Dawson, Paul; Mitra, J

    2017-06-14

    The spectral distribution of light emitted from a scanning tunnelling microscope junction not only bears its intrinsic plasmonic signature but is also imprinted with the characteristics of optical frequency fluc- tuations of the tunnel current. Experimental spectra from gold-gold tunnel junctions are presented that show a strong bias (V b ) dependence, curiously with emission at energies higher than the quantum cut-off (eV b ); a component that decays monotonically with increasing bias. The spectral evolution is explained by developing a theoretical model for the power spectral density of tunnel current fluctuations, incorporating finite temperature contribution through consideration of the quantum transport in the system. Notably, the observed decay of the over cut-off emission is found to be critically associated with, and well explained in terms of the variation in junction conductance with V b . The investigation highlights the scope of plasmon-mediated light emission as a unique probe of high frequency fluctuations in electronic systems that are fundamental to the electrical generation and control of plasmons.

  8. ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

    Science.gov (United States)

    Takei, Kohei; Hashimoto, Shuichiro; Sun, Jing; Zhang, Xu; Asada, Shuhei; Xu, Taiyu; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu

    2016-04-01

    Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

  9. Experimental verification of the rotational type of chiral spin spiral structures by spin-polarized scanning tunneling microscopy.

    Science.gov (United States)

    Haze, Masahiro; Yoshida, Yasuo; Hasegawa, Yukio

    2017-10-16

    We report on experimental verification of the rotational type of chiral spin spirals in Mn thin films on a W(110) substrate using spin-polarized scanning tunneling microscopy (SP-STM) with a double-axis superconducting vector magnet. From SP-STM images using Fe-coated W tips magnetized to the out-of-plane and [001] directions, we found that both Mn mono- and double-layers exhibit cycloidal rotation whose spins rotate in the planes normal to the propagating directions. Our results agree with the theoretical prediction based on the symmetry of the system, supporting that the magnetic structures are driven by the interfacial Dzyaloshinskii-Moriya interaction.

  10. Spin-polarized electron tunneling in bcc FeCo/MgO/FeCo(001) magnetic tunnel junctions.

    Science.gov (United States)

    Bonell, F; Hauet, T; Andrieu, S; Bertran, F; Le Fèvre, P; Calmels, L; Tejeda, A; Montaigne, F; Warot-Fonrose, B; Belhadji, B; Nicolaou, A; Taleb-Ibrahimi, A

    2012-04-27

    In combining spin- and symmetry-resolved photoemission, magnetotransport measurements and ab initio calculations we detangled the electronic states involved in the electronic transport in Fe(1-x)Co(x)(001)/MgO/Fe(1-x)Co(x)(001) magnetic tunnel junctions. Contrary to previous theoretical predictions, we observe a large reduction in TMR (from 530 to 200% at 20 K) for Co content above 25 atomic% as well as anomalies in the conductance curves. We demonstrate that these unexpected behaviors originate from a minority spin state with Δ(1) symmetry that exists below the Fermi level for high Co concentration. Using angle-resolved photoemission, this state is shown to be a two-dimensional state that occurs at both Fe(1-x)Co(x)(001) free surface, and more importantly at the interface with MgO. The combination of this interface state with the peculiar density of empty states due to chemical disorder allows us to describe in details the complex conduction behavior in this system.

  11. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

    Energy Technology Data Exchange (ETDEWEB)

    Awan, I. T.; Galvão Gobato, Y. [Departamento de Física, Universidade Federal de São Carlos (UFSCAR) 13560-905, São Carlos, SP (Brazil); Galeti, H. V. A. [Departamento de Engenharia Elétrica, Universidade Federal de São Carlos 13560-905, São Carlos, SP (Brazil); Brasil, M. J. S. P. [Institute of Physics Gleb Wataghin, UNICAMP, Campinas (Brazil); Taylor, D.; Henini, M. [School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

    2014-08-07

    In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ∼20 meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ∼−75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators.

  12. Voltage and oxide thickness dependent tunneling current density and tunnel resistivity model: Application to high-k material HfO2 based MOS devices

    Science.gov (United States)

    Maity, N. P.; Maity, Reshmi; Baishya, Srimanta

    2017-11-01

    In this paper presents a straightforward efficient investigation of tunneling current density for ultra thin oxide layer based metal-oxide-semiconductor (MOS) devices to realization the gate current as a function of applied potential and oxide thickness. Solutions to the Schrödinger's wave equation are evolved for the different potential energy regions of the MOS device considering appropriate effective mass for each region. For finding approximate mathematical solutions to linear differential equations using spatially changeable coefficients the Wentzel-Kramers-Brillouin (WKB) approximation technique is considered. A p-substrate based n-channel MOS device has been analyzed consisting of SiO2 material as the oxide dielectric along with high-k material HfO2. The tunnel resistivity is correspondingly assessed employing this tunneling current density model. Synopsys Technology Computer Aided Design (TCAD) tool results are employed to validate the analytical model. Tremendous agreements among the results are observed.

  13. Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures

    Science.gov (United States)

    Martino, M. D. V.; Martino, J. A.; Agopian, P. G. D.; Vandooren, A.; Rooyackers, R.; Simoen, E.; Claeys, C.

    2017-05-01

    The goal of this work is to study the performance of current mirror circuits designed with line tunnel field effect transistor (TFET) devices and compare the suitability of this technology with alternatives such as point TFETs and FinFETs. Experimental results have been obtained at room and high temperatures and the analyses focused on parameters such as the magnitude of the on-state current and the sensitivity of the current transfer ratio to channel dimensions mismatch and to the temperature. Line TFETs exhibited higher on-state current than point TFETs, in spite of a higher susceptibility to the channel length. When band-to-band tunneling prevails for both input and output transistors, the current transfer ratio with line TFETs presented a nearly linear dependence on the temperature due to bandgap narrowing. This way, a general equation of the current transfer ratio for circuits designed with the three highlighted technologies is proposed. Globally, it was observed that, unless a very low sensitivity to channel length mismatch is required, line TFET devices are a very suitable alternative for current mirror circuits, since this technology provides much higher on-state currents than point TFETs, and at the same time it is much less sensitive to temperature variations than FinFET transistors.

  14. Analysis of Wind Tunnel Polar Replicates Using the Modern Design of Experiments

    Science.gov (United States)

    Deloach, Richard; Micol, John R.

    2010-01-01

    The role of variance in a Modern Design of Experiments analysis of wind tunnel data is reviewed, with distinctions made between explained and unexplained variance. The partitioning of unexplained variance into systematic and random components is illustrated, with examples of the elusive systematic component provided for various types of real-world tests. The importance of detecting and defending against systematic unexplained variance in wind tunnel testing is discussed, and the random and systematic components of unexplained variance are examined for a representative wind tunnel data set acquired in a test in which a missile is used as a test article. The adverse impact of correlated (non-independent) experimental errors is described, and recommendations are offered for replication strategies that facilitate the quantification of random and systematic unexplained variance.

  15. Simulated warm polar currents during the middle Permian

    Energy Technology Data Exchange (ETDEWEB)

    Winguth, A.M.E.; Kutzbach, J.E. [Wisconsin Univ., Madison, WI (USA). Center for Climatic Research; Heinze, C.; Maier-Reimer, E.; Mikolajewicz, U. [Max-Planck-Institut fuer Meteorologie, Hamburg (Germany); Rowley, D.; Rees, A.; Ziegler, A.M. [Chicago Univ., IL (United States). Dept. of Geophysical Sciences

    2001-05-01

    During Permian Stage 6 (Wordian, Kazanian) the Pangaean supercontinent was surrounded by a superocean - Panthalassa. An ocean general circulation model has been coupled to an atmospheric energy balance model to simulate the sensitivity of the Wordian climate ({proportional_to}265 million years ago) to changes in greenhouse gas concentrations, high latitude geography, and Earth orbital configurations. The model shows a high sensitivity of the ocean circulation to changes in the greenhouse gas forcing, ranging from a forceful southern circulation at low CO{sub 2} concentration (present level) to a more symmetric circulation cell with deep water formation in both hemispheres at high CO{sub 2} concentration (8 x present level). The simulated climate with 4 x present level CO{sub 2} concentration agrees generally well with climate-sensitive sediments and phytogeographic patterns. In this experiment, the model simulates strong subtropical gyres with similarities to the modern South Pacific circulation and moderate surface temperatures on the southern continent Gondwana, resulting from a strong poleward heat transport in the ocean. An even more moderate climate can be generated if high latitude land is removed so that ocean currents can penetrate into the polar regions or if orbital configurations favor high summer insolation over Gondwana. (orig.)

  16. A modular designed ultra-high-vacuum spin-polarized scanning tunneling microscope with controllable magnetic fields for investigating epitaxial thin films.

    Science.gov (United States)

    Wang, Kangkang; Lin, Wenzhi; Chinchore, Abhijit V; Liu, Yinghao; Smith, Arthur R

    2011-05-01

    A room-temperature ultra-high-vacuum scanning tunneling microscope for in situ scanning freshly grown epitaxial films has been developed. The core unit of the microscope, which consists of critical components including scanner and approach motors, is modular designed. This enables easy adaptation of the same microscope units to new growth systems with different sample-transfer geometries. Furthermore the core unit is designed to be fully compatible with cryogenic temperatures and high magnetic field operations. A double-stage spring suspension system with eddy current damping has been implemented to achieve ≤5 pm z stability in a noisy environment and in the presence of an interconnected growth chamber. Both tips and samples can be quickly exchanged in situ; also a tunable external magnetic field can be introduced using a transferable permanent magnet shuttle. This allows spin-polarized tunneling with magnetically coated tips. The performance of this microscope is demonstrated by atomic-resolution imaging of surface reconstructions on wide band-gap GaN surfaces and spin-resolved experiments on antiferromagnetic Mn(3)N(2)(010) surfaces.

  17. Temperature impact on the tunnel fet off-state current components

    Science.gov (United States)

    Agopian, Paula Ghedini Der; Martino, Márcio Dalla Valle; Filho, Sebastião Gomes dos Santos; Martino, João Antonio; Rooyackers, Rita; Leonelli, Daniele; Claeys, Cor

    2012-12-01

    In this work, the temperature impact on the off-state current components is analyzed through numerical simulation and experimentally. First of all, the band-to-band tunneling is studied by varying the underlap in the channel/drain junction, leading to an analysis of the different off-state current components. For pTFET devices, the best behavior for off-state current was obtained for higher values of underlap (reduced BTBT) and at low temperatures (reduced SRH and TAT). At high temperature, an unexpected off-state current occurred due to the thermal leakage current through the drain/channel junction. Besides, these devices presented a good performance when considering the drain current as a function of the drain voltage, making them suitable for analog applications.

  18. Polarization contrast in photon scanning tunnelling microscopy combined with atomic force microscopy

    NARCIS (Netherlands)

    Propstra, K.; Propstra, K.; van Hulst, N.F.

    1995-01-01

    Photon scanning tunnelling microscopy combined with atomic force microscopy allows simultaneous acquisition and direct comparison of optical and topographical images, both with a lateral resolution of about 30 nm, far beyond the optical diffraction limit. The probe consists of a modified

  19. Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities

    Science.gov (United States)

    Alymov, Georgy; Vyurkov, Vladimir; Ryzhii, Victor; Svintsov, Dmitry

    2016-01-01

    In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though the current in 1D structures is pretty low. In this paper, we propose a TFET based on 2D graphene bilayer which demonstrates a record steep subthreshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands. Our simulations show the accessibility of 3.5 × 104 ON/OFF current ratio with 150 mV gate voltage swing, and a maximum subthreshold slope of (20 μV/dec)−1 just above the threshold. The high ON-state current of 0.8 mA/μm is enabled by a narrow (~0.3 eV) extrinsic band gap, while the smallness of the leakage current is due to an all-electrical doping of the source and drain contacts which suppresses the band tailing and trap-assisted tunneling. PMID:27098051

  20. Optimized electrode configuration for current-in-plane characterization of magnetic tunnel junction stacks

    Science.gov (United States)

    Cagliani, A.; Kjær, D.; Østerberg, F. W.; Hansen, O.; Nielsen, P. F.; Petersen, D. H.

    2017-02-01

    The current-in-plane tunneling technique (CIPT) has been a crucial tool in the development of magnetic tunnel junction stacks suitable for magnetic random access memories (MRAM) for more than a decade. The MRAM development has now reached the maturity to make the transition from the R&D phase to the pilot production phase. This will require an improvement in the repeatability of the CIPT metrology technique. Here, we present an analytical model that can be used to simulate numerically the repeatability of a CIPT measurement for an arbitrary MTJ stack prior to any CIPT measurement. The model describes mathematically the main sources of error arising when a micro multi-electrode probe is used to perform a CIPT measurement. The numerically simulated repeatability values obtained on four different MTJ stacks are verified by experimental data and the model is used to optimize the choice of electrodes on a multi-electrode probe to reach up to 36% improvement on the repeatability for the resistance area product and the tunneling magnetoresistance measurement, without any hardware modification.

  1. Concentration polarization: Electrodeposition and transport phenomena at overlimiting current

    DEFF Research Database (Denmark)

    Nielsen, Christoffer Peder

    . Secondly, we investigate concentration polarization in a microchannel with charged walls. We provide full numerical solutions to the transport problem, including the effects of advection and surface conduction in the electric double layers. We show that in large areas of the relevant parameter space...... the transport can be understood in terms of a group of simple analytical models. Some of these are generalizations of a previously published analytical model. In addition to the full numerical model, we employ a numerical boundary layer model with a slip velocity. By carefully comparing the full model...... and the boundary layer model, we reveal a number of issues, which invalidate most previous attempts at modeling microchannel concentration polarization using a slip model. Returning to concentration polarization in a bulk system, we study the effects of water splitting at a permselective membrane. We investigate...

  2. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

    International Nuclear Information System (INIS)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-01-01

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter

  3. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures.

    Science.gov (United States)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-06-25

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter.

  4. Electronic Energy Meter Based on a Tunnel Magnetoresistive Effect (TMR) Current Sensor

    OpenAIRE

    García Vidal, Enrique; Ramírez Muñoz, Diego; Ravelo Arias, Sergio Iván; Sánchez Moreno, Jaime; Cardoso, Susana; Ferreira, Ricardo; Freitas, Paulo

    2017-01-01

    In the present work, the design and microfabrication of a tunneling magnetoresistance (TMR) electrical current sensor is presented. After its physical and electrical characterization, a wattmeter is developed to determine the active power delivered to a load from the AC 50/60 Hz mains line. Experimental results are shown up to 1000 W of power load. A relative uncertainty of less than 1.5% with resistive load and less than 1% with capacitive load was obtained. The described application is an e...

  5. Electronic Energy Meter Based on a Tunnel Magnetoresistive Effect (TMR) Current Sensor.

    Science.gov (United States)

    Vidal, Enrique García; Muñoz, Diego Ramírez; Arias, Sergio Iván Ravelo; Moreno, Jaime Sánchez; Cardoso, Susana; Ferreira, Ricardo; Freitas, Paulo

    2017-09-26

    In the present work, the design and microfabrication of a tunneling magnetoresistance (TMR) electrical current sensor is presented. After its physical and electrical characterization, a wattmeter is developed to determine the active power delivered to a load from the AC 50/60 Hz mains line. Experimental results are shown up to 1000 W of power load. A relative uncertainty of less than 1.5% with resistive load and less than 1% with capacitive load was obtained. The described application is an example of how TMR sensing technology can play a relevant role in the management and control of electrical energy.

  6. Observation of thermoelectric currents in high-field superconductor-ferromagnet tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Kolenda, Stefan; Wolf, Michael J.; Beckmann, Detlef [Institut fuer Nanotechnologie, Karlsruher Institut fuer Technologie (Germany)

    2016-07-01

    We report on the experimental observation of thermoelectric currents in superconductor-ferromagnet tunnel junctions in high magnetic fields. The thermoelectric signals are due to a spin-dependent lifting of particle-hole symmetry, and are found to be in excellent agreement with recent theoretical predictions. The maximum Seebeck coefficient inferred from the data is about -100 μ V/K, much larger than commonly found in metalic structures. Our results directly give proof of the coupling of spin and heat transport in high-field superconductors.

  7. Resonant tunneling and nonlinear current in heterobarrier with complex dispersion of carriers

    CERN Document Server

    Kim, C S; Shtenberg, V B

    2002-01-01

    The study of novel effects in resonant tunneling of electrons in GaAs/Al sub x Ga sub 1 sub - sub x As/GaAs single-barrier structures under an applied electric bias is carried out. GAMMA-X mixing of electron states at the interfaces is responsible for Fano resonance in the barrier transmittance. A motion of Fano resonances and the interaction between Fano and Breit-Wigner resonances in electric field have been investigated. The current-voltage characteristic of the heterobarrier is calculated. It is shown that the differential conductivity presents a way to get the Fano resonance profile and its parameters

  8. High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires.

    Science.gov (United States)

    Ganjipour, Bahram; Dey, Anil W; Borg, B Mattias; Ek, Martin; Pistol, Mats-Erik; Dick, Kimberly A; Wernersson, Lars-Erik; Thelander, Claes

    2011-10-12

    We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm(2) at 0.50 V, maximum peak current of 67 kA/cm(2) at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.

  9. Suppression of ambipolar current in tunnel FETs using drain-pocket: Proposal and analysis

    Science.gov (United States)

    Garg, Shelly; Saurabh, Sneh

    2018-01-01

    In this paper, we investigate the impact of a drain-pocket (DP) adjacent to the drain region in Tunnel Field-Effect Transistors (TFETs) to effectively suppress the ambipolar current. Using calibrated two-dimensional device simulation, we examine the impact of DP in Double Gate TFET (DGTFET). We demonstrate the superiority of the DP technique over the existing techniques in controlling the ambipolar current. In particular, the addition of DP to a TFET is able to fully suppress the ambipolar current even when TFET is biased at high negative gate voltages and drain doping is kept as high as the source doping. Moreover, adding DP is complementary to the well-known technique of employ-ing source-pocket (SP) in a TFET since both need similar doping type and doping concentration.

  10. Current-driven thermo-magnetic switching in magnetic tunnel junctions

    Science.gov (United States)

    Kravets, A. F.; Polishchuk, D. M.; Pashchenko, V. A.; Tovstolytkin, A. I.; Korenivski, V.

    2017-12-01

    We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ electrodes, and is due to a current-driven ferro-to-paramagnetic Curie transition with the associated exchange decoupling within the free layer leading to magnetic reversal. We simulate the current and heat propagation through the device and show how heat focusing can be used to improve the power efficiency. The Curie-switch MTJ demonstrated in this work has the advantage of being highly tunable in terms of its operating temperature range, conveniently to or just above room temperature, which can be of technological significance and competitive with the known switching methods using spin-transfer torques.

  11. Process and device integration for silicon tunnel FETs utilizing isoelectronic trap technology to enhance the ON current

    Science.gov (United States)

    Mori, Takahiro; Asai, Hidehiro; Fukuda, Koichi; Matsukawa, Takashi

    2018-04-01

    A tunnel FET (TFET) is a candidate replacement for conventional MOSFETs to realize low-power LSI. The most significant issue with the practical application of TFETs concerns their low tunneling current. Si is an indirect-gap material with a low band-to-band tunneling probability and is not favored for the channel. However, a new technology has recently been proposed to enhance the tunneling current in Si-TFETs by utilizing isoelectronic trap (IET) technology. IET technology provides an innovative approach to realizing low-power LSI with TFETs. In this paper, state-of-the-art research on Si-TFETs with IET technology from the viewpoint of process and device integration is reviewed.

  12. Polarized parton distributions from charged-current deep-inelastic scattering and future neutrino factories

    CERN Document Server

    Forte, Stefano; Ridolfi, G; Forte, Stefano; Mangano, Michelangelo L.; Ridolfi, Giovanni

    2001-01-01

    We discuss the determination of polarized parton distributions from charged-current deep-inelastic scattering experiments. We summarize the next-to-leading order treatment of charged-current polarized structure functions, their relation to polarized parton distributions and scale dependence, and discuss their description by means of a next-to-leading order evolution code. We discuss current theoretical expectations and positivity constraints on the unmeasured C-odd combinations Delta q-Delta qbar of polarized quark distributions, and their determination in charged-current deep-inelastic scattering experiments. We give estimates of the expected errors on charged-current structure functions at a future neutrino factory, and perform a study of the accuracy in the determination of polarized parton distributions that would be possible at such a facility. We show that these measurements have the potential to distinguish between different theoretical scenarios for the proton spin structure.

  13. Polarized parton distributions from charged-current deep-inelastic scattering and future neutrino factories

    International Nuclear Information System (INIS)

    Forte, Stefano; Mangano, Michelangelo L.; Ridolfi, Giovanni

    2001-01-01

    We discuss the determination of polarized parton distributions from charged-current deep-inelastic scattering experiments. We summarize the next-to-leading-order treatment of charged-current polarized structure functions, their relation to polarized parton distributions and scale dependence, and discuss their description by means of a next-to-leading-order evolution code. We discuss current theoretical expectations and positivity constraints on the unmeasured C-odd combinations Δq-Δq-bar of polarized quark distributions, and their determination in charged-current deep-inelastic scattering experiments. We give estimates of the expected errors on charged-current structure functions at a future neutrino factory, and perform a study of the accuracy in the determination of polarized parton distributions that would be possible at such a facility. We show that these measurements have the potential to distinguish between different theoretical scenarios for the proton spin structure

  14. Resonant Tunneling Spin Pump

    Science.gov (United States)

    Ting, David Z.

    2007-01-01

    The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.

  15. Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes

    Science.gov (United States)

    Soderstrom, J. R.; Brown, E. R.; Parker, C. D.; Mahoney, L. J.; Yao, J. Y.

    1991-01-01

    InAs/AlSb double-barrier resonant tunneling diodes with peak current densities up to 370,000 A/sq cm and high peak-to-valley current ratios of 3.2 at room temperature have been fabricated. The peak current density is well-explained by a stationary-state transport model with the two-band envelope function approximation. The valley current density predicted by this model is less than the experimental value by a factor that is typical of the discrepancy found in other double-barrier structures. It is concluded that threading dislocations are largely inactive in the resonant tunneling process.

  16. Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application

    Science.gov (United States)

    Morita, Yukinori; Fukuda, Koichi; Liu, Yongxun; Mori, Takahiro; Mizubayashi, Wataru; O'uchi, Shin-ichi; Fuketa, Hiroshi; Otsuka, Shintaro; Migita, Shinji; Masahara, Meishoku; Endo, Kazuhiko; Ota, Hiroyuki; Matsukawa, Takashi

    2017-04-01

    We have demonstrated the operation of a CMOS inverter consisting of Si tunnel FinFETs. Both p- and n-type tunnel FinFETs are successfully fabricated and operated on the same SOI wafer. The current mismatch between p- and n-type tunnel FETs is compensated by tuning the number of fin channels. Very low short-circuit current and clear voltage input-output characteristics are obtained. The thin epitaxial channel in the tunnel FinFETs effectively increases the drain current and accordingly reduces the drain capacitance, which could help high-performance tunnel FET CMOS inverter operation.

  17. Micromagnetic investigation of the dynamics of magnetization switching induced by a spin polarized current

    Science.gov (United States)

    Lee, Kyung-Jin; Dieny, Bernard

    2006-03-01

    Using micromagnetic modeling, we tested a prediction of single-domain spin-torque theory which switching current density depends only weakly on magnetic cell size. The switching time and current density are strongly affected by the cell size for low spin polarization. Larger samples with a small length-to-width ratio and small spin polarization can exhibit a nonmonotonous dependence of switching time on current. Excitation of incoherent spin waves caused by the circular Oersted field due to the current is responsible for this nonmonotonous dependence. However, the magnetic dynamics recovers a single-domain-like behavior when the spin polarization is high and/or the cell size is small.

  18. Current oscillations in Schottky-barrier CNTFET: towards resonant tunneling device operation

    Science.gov (United States)

    Shaker, Ahmed; Ossaimee, Mahmoud

    2018-03-01

    In this work, it has been shown that current oscillations could be enhanced in Schottky-barrier carbon nanotube FET (SB-CNFET) particularly at the low drain voltage and small channel lengths. This oscillatory dependence on the gate voltage brings out negative differential transconductance regions. We have simulated the SB-CNTFET using a 2D quantum simulator by solving NEGF and Poisson’s equation self-consistently. A parabolic potential well profile between double barriers is formed along the transport direction of the channel which is responsible for these oscillations. Key factors that affect the current oscillations are thoroughly investigated such as drain voltage, channel length, CNT diameter, the dielectric constant of the gate oxide and temperature. The results of this work pave a way to shed light on the feasibility and enhancement of SB-CNTFET as a resonant tunneling device.

  19. Current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation

    Directory of Open Access Journals (Sweden)

    N Hatefi Kargan

    2013-09-01

    Full Text Available  In this paper, current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation has been calculated and compared with the results when there is no electromagnetic radiation. For calculating current -voltage characteristic, it is required to calculate the transmission coefficient of electrons from the well and barrier structures of this device. For calculating the transmission coefficient of electrons at the presence of electromagnetic radiation, Finite Difference Time Domain (FDTD method has been used and when there is no electromagnetic radiation Transfer Matrix Method (TMM and finite diffirence time domain method have been used. The results show that the presence of electromagnetic radiation causes resonant states other than principal resonant state (without presence of electromagnetic radiation to appear on the transmition coefficient curve where they are in distances from the principal peak and from each other. Also, the presence of electromagnetic radiation causes peaks other than principal peak to appear on the current-voltage characteristics of the device. Under electromagnetic radiation, the number of peaks on the current-voltage curve is smaller than the number of peaks on the current-voltage transmission coefficient. This is due to the fact that current-voltage curve is the result of integration on the energy of electrons, Thus, the sharper and low height peaks on the transmission coefficient do not appear on the current-voltage characteristic curve.

  20. Single-molecule electronics: Cooling individual vibrational modes by the tunneling current.

    Science.gov (United States)

    Lykkebo, Jacob; Romano, Giuseppe; Gagliardi, Alessio; Pecchia, Alessandro; Solomon, Gemma C

    2016-03-21

    Electronic devices composed of single molecules constitute the ultimate limit in the continued downscaling of electronic components. A key challenge for single-molecule electronics is to control the temperature of these junctions. Controlling heating and cooling effects in individual vibrational modes can, in principle, be utilized to increase stability of single-molecule junctions under bias, to pump energy into particular vibrational modes to perform current-induced reactions, or to increase the resolution in inelastic electron tunneling spectroscopy by controlling the life-times of phonons in a molecule by suppressing absorption and external dissipation processes. Under bias the current and the molecule exchange energy, which typically results in heating of the molecule. However, the opposite process is also possible, where energy is extracted from the molecule by the tunneling current. Designing a molecular "heat sink" where a particular vibrational mode funnels heat out of the molecule and into the leads would be very desirable. It is even possible to imagine how the vibrational energy of the other vibrational modes could be funneled into the "cooling mode," given the right molecular design. Previous efforts to understand heating and cooling mechanisms in single molecule junctions have primarily been concerned with small models, where it is unclear which molecular systems they correspond to. In this paper, our focus is on suppressing heating and obtaining current-induced cooling in certain vibrational modes. Strategies for cooling vibrational modes in single-molecule junctions are presented, together with atomistic calculations based on those strategies. Cooling and reduced heating are observed for two different cooling schemes in calculations of atomistic single-molecule junctions.

  1. Spin-polarized scanning tunneling microscopy experiments on the rough surface of a polycrystalline NiFe film with a fine magnetic tip sensitive to a well-defined magnetization component

    Directory of Open Access Journals (Sweden)

    H. Matsuyama

    2016-03-01

    Full Text Available We developed a micrometer-sized magnetic tip integrated onto the write head of a hard disk drive for spin-polarized scanning tunneling microscopy (SP-STM in the modulated tip magnetization mode. Using SP-STM, we measured a well-defined in-plane spin-component of the tunneling current of the rough surface of a polycrystalline NiFe film. The spin asymmetry of the NiFe film was about 1.3% within the bias voltage range of -3 to 1 V. We obtained the local spin component image of the sample surface, switching the magnetic field of the sample to reverse the sample magnetization during scanning. We also obtained a spin image of the rough surface of a polycrystalline NiFe film evaporated on the recording medium of a hard disk drive.

  2. The critical role of the barrier thickness in spin filter tunneling

    International Nuclear Information System (INIS)

    Miller, Casey W.

    2009-01-01

    Spin filter tunneling is considered in the low bias limit as functions of the temperature dependent barrier parameters. We demonstrate the generation of spin polarized tunneling currents in relation to the magnetic order parameter, and discuss how an interfacially suppressed order parameter leads to a temperature dependent tunneling current asymmetry. Analyzing the full parameter space reveals that the often overlooked barrier thickness plays a critical role in spin filter tunneling. With all else fixed, thicker barriers yield higher spin polarization, and allow a given polarization to be achieved at higher temperatures. This insight may open the door for new materials to serve as spin filter barriers.

  3. Current diagnostics and treatment of the cubital tunnel syndrome in Austria

    Directory of Open Access Journals (Sweden)

    Harder, Kristina

    2016-01-01

    Full Text Available According to the vote of the Austrian Society for Surgery of the Hand (ÖGH an investigation to collect data on the current state of the treatment of cubital tunnel syndrome was initiated. Over one year a total of 875 patients with cubital tunnel syndrome were operated in Austria, this means an incidence of this nerve entrapment of 0.011%. Most of the operations were done by trauma surgeons (287; 33%. For diagnosis most of the centers rely on clinical symptoms, electroneurophysiology, and elbow X-ray. 40% of the institutions regard conservative therapy as useless and not indicated. If conservative treatment modalities are applied, physiotherapy (97%, non-steroidal anti-inflammatory medication (77%, and glucocorticoid injections (30% are primarily used. In case of simple nerve entrapment most of the surgeons (72% prefer simple nerve decompression. If there is additional pathology subcutaneous cubital nerve transposition is recommended (62%. Endoscopic techniques are only use by 3% of the surgeons. In the postoperative care, physiotherapy is favored in 51%, whereas 24% do not judge any postoperative care as beneficial.The three most often encountered complications were incomplete remission, scar contracture and hypertrophy, and postoperative bleeding.

  4. Theory for Spin Selective Andreev Re ection in Vortex Core of Topological Superconductor: Majorana Zero Modes on Spherical Surface and Application to Spin Polarized Scanning Tunneling Microscope Probe

    Science.gov (United States)

    Zhang, Fu-Chun; Hu, Lun-Hui; Li, Chuang; Xu, Dong-Hui; Zhou, Yi

    Majorana zero modes (MZMs) have been predicted to exist in the topological insulator (TI)/superconductor (SC) heterostructure. Recent spin polarized scanning tunneling microscope(STM) experiment has observed spin-polarization dependence of the zero bias differential tunneling conductance at the center of vortex core. Here we consider a helical electron system described by a Rashba spin orbit coupling Hamiltonian on a spherical surface with a s-wave superconducting pairing due to proximity effect. We examine in-gap excitations of a pair of vortices with one at the north pole and the other at the south pole. While the MZM is not a spin eigenstate, the spin wavefunction of the MZM at the center of the vortex core, r = 0, is parallel to the magnetic field, and the local Andreev reflection of the MZM is spin selective, namely occurs only when the STM tip has the spin polarization parallel to the magnetic field, similar to the case in 1-dimensional nanowire. The total local differential tunneling conductance consists of the normal term proportional to the local density of states and an additional term arising from the Andreev reflection. We apply our theory to examine the recently reported spin-polarized STM experiments and show good agreement with the experiments

  5. Current-induced spin polarization in a spin-polarized two-dimensional electron gas with spin-orbit coupling

    International Nuclear Information System (INIS)

    Wang, C.M.; Pang, M.Q.; Liu, S.Y.; Lei, X.L.

    2010-01-01

    The current-induced spin polarization (CISP) is investigated in a combined Rashba-Dresselhaus spin-orbit-coupled two-dimensional electron gas, subjected to a homogeneous out-of-plane magnetization. It is found that, in addition to the usual collision-related in-plane parts of CISP, there are two impurity-density-free contributions, arising from intrinsic and disorder-mediated mechanisms. The intrinsic parts of spin polarization are related to the Berry curvature, analogous with the anomalous and spin Hall effects. For short-range collision, the disorder-mediated spin polarizations completely cancel the intrinsic ones and the total in-plane components of CISP equal those for systems without magnetization. However, for remote disorders, this cancellation does not occur and the total in-plane components of CISP strongly depend on the spin-orbit interaction coefficients and magnetization for both pure Rashba and combined Rashba-Dresselhaus models.

  6. Co on Pt(111) studied by spin-polarized scanning tunneling microscopy and spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Meier, F.K.

    2006-07-01

    In this thesis the electronic properties of the bare Pt(111) surface, the structural, electronic, and magnetic properties of monolayer and double-layer high Co nanostructures as well as the spin-averaged electronic structure of single Co atoms on Pt(111) were studied by low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS). The experiments on the bare Pt(111) surface and on single Co atoms have been performed in an STM facility operating at temperatures of down to 0.3 K and at magnetic fields of up to 14 T under ultra-high vacuum conditions. The facility has been taken into operation within the time period of this thesis and its specifications were tested by STS measurements. These characterization measurements show a very high stability of the tunneling junction and an energy resolution of about 100 {mu}eV, which is close to the thermal limit. The investigation of the electronic structure of the bare Pt(111) surface reveals the existence of an unoccupied surface state. By a comparison of the measured dispersion to first-principles electronic structure calculations the state is assigned to an sp-derived surface band at the lower boundary of the projected bulk band gap. The surface state exhibits a strong spin-orbit coupling induced spin splitting. The close vicinity to the bulk bands leads to a strong linear contribution to the dispersion and thus to a deviant appearance in the density of states in comparison to the surface states of the (111) surfaces of noble metals. A detailed study of Co monolayer and double-layer nanostructures on the Pt(111) surface shows that both kinds of nanostructures exhibit a highly inhomogeneous electronic structure which changes at the scale of only a few Aa due to a strong stacking dependence with respect to the Pt(111) substrate. With the help of first principles calculations the different spectroscopic appearance for Co atoms within the Co monolayer is assigned to a stacking dependent hybridization of Co states

  7. Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes

    International Nuclear Information System (INIS)

    Dakhlaoui, H; Almansour, S

    2016-01-01

    In this work, the electronic properties of resonant tunneling diodes (RTDs) based on GaN-Al x Ga (1−x) N double barriers are investigated by using the non-equilibrium Green functions formalism (NEG). These materials each present a wide conduction band discontinuity and a strong internal piezoelectric field, which greatly affect the electronic transport properties. The electronic density, the transmission coefficient, and the current–voltage characteristics are computed with considering the spontaneous and piezoelectric polarizations. The influence of the quantum size on the transmission coefficient is analyzed by varying GaN quantum well thickness, Al x Ga (1−x) N width, and the aluminum concentration x Al . The results show that the transmission coefficient more strongly depends on the thickness of the quantum well than the barrier; it exhibits a series of resonant peaks and valleys as the quantum well width increases. In addition, it is found that the negative differential resistance (NDR) in the current–voltage ( I – V) characteristic strongly depends on aluminum concentration x Al . It is shown that the peak-to-valley ratio (PVR) increases with x Al value decreasing. These findings open the door for developing vertical transport nitrides-based ISB devices such as THz lasers and detectors. (paper)

  8. Energy-band dynamics in a current-biased Josephson junction probed by incoherent Cooper-pair tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Leppaekangas, Juha; Thuneberg, Erkki [Department of Physical Sciences, University of Oulu, FI-90014 (Finland)], E-mail: juha.leppakangas@oulu.fi

    2009-02-01

    We analyze how the dynamics in a current-biased mesoscopic Josephson junction can be probed by an additional smaller Josephson junction (probe). The probe is connected to a small island in between the Josephson junction and a resistor R >> R{sub Q} = h/4e{sup 2}. The current through the resistor results in an effective current bias to the larger JJ. We model the steady state properties of the system under thermal and quantum fluctuations of the feed current. We use a density matrix approach based on the Born-Markov equations treating the current fluctuations perturbatively. The probe is also treated perturbatively assuming the regime of incoherent Cooper-pair tunneling. We find that the I - V characteristics across the probe shows traces of energy bands, Bloch oscillations and Zener tunneling in the current-biased Josephson junction.

  9. Theory of electrically controlled resonant tunneling spin devices

    Science.gov (United States)

    Ting, David Z. -Y.; Cartoixa, Xavier

    2004-01-01

    We report device concepts that exploit spin-orbit coupling for creating spin polarized current sources using nonmagnetic semiconductor resonant tunneling heterostructures, without external magnetic fields. The resonant interband tunneling psin filter exploits large valence band spin-orbit interaction to provide strong spin selectivity.

  10. Preparation of scanning tunneling microscopy tips using pulsed alternating current etching

    International Nuclear Information System (INIS)

    Valencia, Victor A.; Thaker, Avesh A.; Derouin, Jonathan; Valencia, Damian N.; Farber, Rachael G.; Gebel, Dana A.; Killelea, Daniel R.

    2015-01-01

    An electrochemical method using pulsed alternating current etching (PACE) to produce atomically sharp scanning tunneling microscopy (STM) tips is presented. An Arduino Uno microcontroller was used to control the number and duration of the alternating current (AC) pulses, allowing for ready optimization of the procedures for both Pt:Ir and W tips using a single apparatus. W tips prepared using constant and pulsed AC power were compared. Tips fashioned using PACE were sharper than those etched with continuous AC power alone. Pt:Ir tips were prepared with an initial coarse etching stage using continuous AC power followed by fine etching using PACE. The number and potential of the finishing AC pulses was varied and scanning electron microscope imaging was used to compare the results. Finally, tip quality using the optimized procedures was verified by UHV-STM imaging. With PACE, at least 70% of the W tips and 80% of the Pt:Ir tips were of sufficiently high quality to obtain atomically resolved images of HOPG or Ni(111)

  11. Preparation of scanning tunneling microscopy tips using pulsed alternating current etching

    Energy Technology Data Exchange (ETDEWEB)

    Valencia, Victor A.; Thaker, Avesh A.; Derouin, Jonathan; Valencia, Damian N.; Farber, Rachael G.; Gebel, Dana A.; Killelea, Daniel R., E-mail: dkillelea@luc.edu [Department of Chemistry and Biochemistry, Loyola University Chicago, 1068 W. Sheridan Rd., Chicago, Illinois 60660 (United States)

    2015-03-15

    An electrochemical method using pulsed alternating current etching (PACE) to produce atomically sharp scanning tunneling microscopy (STM) tips is presented. An Arduino Uno microcontroller was used to control the number and duration of the alternating current (AC) pulses, allowing for ready optimization of the procedures for both Pt:Ir and W tips using a single apparatus. W tips prepared using constant and pulsed AC power were compared. Tips fashioned using PACE were sharper than those etched with continuous AC power alone. Pt:Ir tips were prepared with an initial coarse etching stage using continuous AC power followed by fine etching using PACE. The number and potential of the finishing AC pulses was varied and scanning electron microscope imaging was used to compare the results. Finally, tip quality using the optimized procedures was verified by UHV-STM imaging. With PACE, at least 70% of the W tips and 80% of the Pt:Ir tips were of sufficiently high quality to obtain atomically resolved images of HOPG or Ni(111)

  12. Breakthrough in current-in-plane tunneling measurement precision by application of multi-variable fitting algorithm

    DEFF Research Database (Denmark)

    Cagliani, Alberto; Østerberg, Frederik Westergaard; Hansen, Ole

    2017-01-01

    We present a breakthrough in micro-four-point probe (M4PP) metrology to substantially improve precision of transmission line (transfer length) type measurements by application of advanced electrode position correction. In particular, we demonstrate this methodology for the M4PP current......-in-plane tunneling (CIPT) technique. The CIPT method has been a crucial tool in the development of magnetic tunnel junction (MTJ) stacks suitable for magnetic random-access memories for more than a decade. On two MTJ stacks, the measurement precision of resistance-area product and tunneling magnetoresistance...... was improved by up to a factor of 3.5 and the measurement reproducibility by up to a factor of 17, thanks to our improved position correction technique....

  13. Magnetic Field Perturbations from Currents in the Dark Polar Regions During Quiet Geomagnetic Conditions

    DEFF Research Database (Denmark)

    Friis-Christensen, Eigil; Finlay, Chris; Hesse, M.

    2017-01-01

    In the day-side sunlit polar ionosphere the varying and IMF dependent convection creates strong ionospheric currents even during quiet geomagnetic conditions. Observations during such times are often excluded when using satellite data to model the internal geomagneticmain field. Observations from...... the night-side or local winter during quiet conditions are, however, also influenced by variations in the IMF. In this paper we briefly review the large scale features of the ionospheric currents in the polar regions with emphasis on the current distribution during undisturbed conditions. We examine...

  14. Determining polar ionospheric electrojet currents from Swarm satellite constellation magnetic data

    DEFF Research Database (Denmark)

    Aakjær, Cecilie Drost; Olsen, Nils; Finlay, Chris

    2016-01-01

    We determine the strength and location of the ionospheric currents responsible for the polar electrojets from magnetic data collected by the Swarm satellite constellation on an orbit-by-orbit basis. The ionospheric currents are modelled using a simple, yet robust, method by a series of line...

  15. Current Tunnelling in MOS Devices with Al2O3/SiO2 Gate Dielectric

    Directory of Open Access Journals (Sweden)

    A. Bouazra

    2008-01-01

    Full Text Available With the continued scaling of the SiO2 thickness below 2 nm in CMOS devices, a large direct-tunnelling current flow between the gate electrode and silicon substrate is greatly impacting device performance. Therefore, higher dielectric constant materials are desirable for reducing the gate leakage while maintaining transistor performance for very thin dielectric layers. Despite its not very high dielectric constant (∼10, Al2O3 has emerged as one of the most promising high-k candidates in terms of its chemical and thermal stability as its high-barrier offset. In this paper, a theoretical study of the physical and electrical properties of Al2O3 gate dielectric is reported including I(V and C(V characteristics. By using a stack of Al2O3/SiO2 with an appropriate equivalent oxide thickness of gate dielectric MOS, the gate leakage exhibits an important decrease. The effect of carrier trap parameters (depth and width at the Al2O3/SiO2 interface is also discussed.

  16. Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped NiSi2 tunnel junctions

    Science.gov (United States)

    Knoll, L.; Schmidt, M.; Zhao, Q. T.; Trellenkamp, S.; Schäfer, A.; Bourdelle, K. K.; Mantl, S.

    2013-06-01

    Planar and nanowire (NW) tunneling field effect transistors (TFETs) have been fabricated on ultra thin strained and unstrained SOI with shallow doped nickel disilicide (NiSi2) source and drain (S/D) contacts. We developed a novel, self-aligned process to form the p-i-n TFETs which greatly simplifies their fabrication by tilted dopant implantation using the high-k/metal gate as a shadow mask and dopant segregation. Two methods of dopant segregation are compared: dopant segregation based on the "snow-plough" effect of dopants during silicidation and implantation into the silicide (IIS) followed by thermal outdiffusion. High drive currents of up to 60 μA/μm of planar p-TFETs were achieved indicating good silicide/silicon tunneling junctions. The non-linear temperature dependence of the inverse subthreshold slope S indicates characteristic TFET behavior. Strained Si NW array n-TFETs with omega shaped HfO2/TiN gates show high drive currents of 7 μA/μm @ 1 V Vdd and steep inverse subthreshold slopes with minimum values of <50 mV/dec due to the smaller band gap of strained Si and optimized electrostatics.

  17. Treatment of Carpal Tunnel Syndrome in pregnancy with Polarized Polychromatic Non-coherent Light (Bioptron Light): A Preliminary, Prospective, Open Clinical Trial.

    Science.gov (United States)

    Dimitrios, Stasinopoulos; Stasinopoulos, Loannis

    2017-12-31

    The aim of this trial was to assess the efficacy of polarized polychromatic noncoherent light (Bioptron light) in the treatment of Carpal Tunnel Syndrome (CTS) in pregnancy. An uncontrolled experimental study was conducted in pregnant patients with CTS who visited our clinic from January 2006 to January 2010. Bioptron light (480-3400 nm; 95% polarization; 40 mW/cm 2 ; and 2.4 J/cm 2 ) was administered perpendicular to the carpal tunnel area. The irradiation time for each session was 6 min at an operating distance of 5-10 cm from the carpal tunnel area, twice each day, five days per week for 2 weeks. Pain and paraesthesia using a visual analogue scale (VAS) and finger pinch strength were evaluated at the end of treatment (week 2) and 1-month (week 6) after the end of treatment. The Student'sttest was used and p values Bioptron light is a reliable, safe, and effective treatment option in pregnant patients with CTS. Controlled clinical trials are needed to establish the absolute and relative effectiveness of this intervention.

  18. Theory of high-resolution tunneling spin transport on a magnetic skyrmion

    OpenAIRE

    Palotás, Krisztián; Rózsa, Levente; Szunyogh, László

    2018-01-01

    Tunneling spin transport characteristics of a magnetic skyrmion are described theoretically in magnetic scanning tunneling microscopy (STM). The spin-polarized charge current in STM (SP-STM) and tunneling spin transport vector quantities, the longitudinal spin current and the spin transfer torque are calculated in high spatial resolution within the same theoretical framework. A connection between the conventional charge current SP-STM image contrasts and the magnitudes of the spin transport v...

  19. Injection and detection of a spin-polarized current in a light-emitting diode

    Science.gov (United States)

    Fiederling, R.; Keim, M.; Reuscher, G.; Ossau, W.; Schmidt, G.; Waag, A.; Molenkamp, L. W.

    1999-12-01

    The field of magnetoelectronics has been growing in practical importance in recent years. For example, devices that harness electronic spin-such as giant-magnetoresistive sensors and magnetoresistive memory cells-are now appearing on the market. In contrast, magnetoelectronic devices based on spin-polarized transport in semiconductors are at a much earlier stage of development, largely because of the lack of an efficient means of injecting spin-polarized charge. Much work has focused on the use of ferromagnetic metallic contacts, but it has proved exceedingly difficult to demonstrate polarized spin injection. More recently, two groups have reported successful spin injection from an NiFe contact, but the observed effects of the spin-polarized transport were quite small (resistance changes of less than 1%). Here we describe a different approach, in which the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner. We achieve injection efficiencies of 90% spin-polarized current into a non-magnetic semiconductor device. The device used in this case is a GaAs/AlGaAs light-emitting diode, and spin polarization is confirmed by the circular polarization state of the emitted light.

  20. The fractional acoustoelectric current plateau induced by the energy-dependent tunnelling from dynamic quantum dots into an impurity dot

    Science.gov (United States)

    Chen, S. W.; Song, L.

    2016-08-01

    The fractional acoustoelectric (AE) current plateau in surface-acoustic-waves (SAW) single-electron transport devices is studied by measuring the current plateau as a function of the SAW power and gate bias as well as a function of perpendicular magnetic filed. Our investigation indicates that the fractional plateau is induced by the tunnelling effect from the dynamic quantum dots (QDs) into a static impurity dot. Rate equations are used to extract the tunnelling rates, which change a lot with the number of electrons in the dynamic QDs, the SAW power and gate bias. In addition, the current plateau evolves into a fractional structure, when a strong perpendicular magnetic field is applied to the system.

  1. Development of a high average current polarized electron source with long cathode operational lifetime

    Energy Technology Data Exchange (ETDEWEB)

    C. K. Sinclair; P. A. Adderley; B. M. Dunham; J. C. Hansknecht; P. Hartmann; M. Poelker; J. S. Price; P. M. Rutt; W. J. Schneider; M. Steigerwald

    2007-02-01

    Substantially more than half of the electromagnetic nuclear physics experiments conducted at the Continuous Electron Beam Accelerator Facility of the Thomas Jefferson National Accelerator Facility (Jefferson Laboratory) require highly polarized electron beams, often at high average current. Spin-polarized electrons are produced by photoemission from various GaAs-based semiconductor photocathodes, using circularly polarized laser light with photon energy slightly larger than the semiconductor band gap. The photocathodes are prepared by activation of the clean semiconductor surface to negative electron affinity using cesium and oxidation. Historically, in many laboratories worldwide, these photocathodes have had short operational lifetimes at high average current, and have often deteriorated fairly quickly in ultrahigh vacuum even without electron beam delivery. At Jefferson Lab, we have developed a polarized electron source in which the photocathodes degrade exceptionally slowly without electron emission, and in which ion back bombardment is the predominant mechanism limiting the operational lifetime of the cathodes during electron emission. We have reproducibly obtained cathode 1/e dark lifetimes over two years, and 1/e charge density and charge lifetimes during electron beam delivery of over 2?105???C/cm2 and 200 C, respectively. This source is able to support uninterrupted high average current polarized beam delivery to three experimental halls simultaneously for many months at a time. Many of the techniques we report here are directly applicable to the development of GaAs photoemission electron guns to deliver high average current, high brightness unpolarized beams.

  2. Defect-enhanced Rashba spin-polarized currents in carbon nanotubes

    Science.gov (United States)

    Santos, Hernán; Chico, Leonor; Alvarellos, J. E.; Latgé, A.

    2017-10-01

    The production of spin-polarized currents in pristine carbon nanotubes with Rashba spin-orbit interactions has been shown to be very sensitive to the symmetry of the tubes and the geometry of the setup. Here we analyze the role of defects on the spin quantum conductances of metallic carbon nanotubes due to an external electric field. We show that localized defects, such as adsorbed hydrogen atoms or pentagon-heptagon pairs, increase the Rashba spin-polarized current. Moreover, this enhancement takes place for energies closer to the Fermi energy as compared to the response of pristine tubes. Such increments can be even larger when several equally spaced defects are introduced into the system. We explore different arrangements of defects, showing that for certain geometries there are flips of the spin-polarized current and even transport suppression. Our results indicate that spin valve devices at the nanoscale may be achieved via defect engineering in carbon nanotubes.

  3. Strata control in tunnels and an evaluation of support units and systems currently used with a view to improving the effectiveness of support, stability and safety of tunnels.

    CSIR Research Space (South Africa)

    Haile, AT

    1998-12-01

    Full Text Available This report details a methodology for rational design of tunnel support systems based on a mechanistic evaluation of the interaction between the components of a tunnel support system and a highly discontinuous rock mass structure. This analysis...

  4. Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics

    Directory of Open Access Journals (Sweden)

    Chin-Sheng Pang

    2014-04-01

    Full Text Available In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S, Al/HfO2/SiO2/Si (H, and Al/3HfO2/SiO2/Si (3H were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO2 dielectric layer, which leads to larger numbers of carriers crowded through the sweep of VG before the domination of tunneling current. Additionally, the HfO2 dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e−-h+ pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO2 stacking layers are importance to MOS(p tunneling photo diodes.

  5. Optimization of L-shaped tunneling field-effect transistor for ambipolar current suppression and Analog/RF performance enhancement

    Science.gov (United States)

    Li, Cong; Zhao, Xiaolong; Zhuang, Yiqi; Yan, Zhirui; Guo, Jiaming; Han, Ru

    2018-03-01

    L-shaped tunneling field-effect transistor (LTFET) has larger tunnel area than planar TFET, which leads to enhanced on-current ION . However, LTFET suffers from severe ambipolar behavior, which needs to be further optimized for low power and high-frequency applications. In this paper, both hetero-gate-dielectric (HGD) and lightly doped drain (LDD) structures are introduced into LTFET for suppression of ambipolarity and improvement of analog/RF performance of LTFET. Current-voltage characteristics, the variation of energy band diagrams, distribution of band-to-band tunneling (BTBT) generation and distribution of electric field are analyzed for our proposed HGD-LDD-LTFET. In addition, the effect of LDD on the ambipolar behavior of LTFET is investigated, the length and doping concentration of LDD is also optimized for better suppression of ambipolar current. Finally, analog/RF performance of HGD-LDD-LTFET are studied in terms of gate-source capacitance, gate-drain capacitance, cut-off frequency, and gain bandwidth production. TCAD simulation results show that HGD-LDD-LTFET not only drastically suppresses ambipolar current but also improves analog/RF performance compared with conventional LTFET.

  6. Spin-flip scattering effect on the current-induced spin torque in ferromagnet-insulator-ferromagnet tunnel junctions

    International Nuclear Information System (INIS)

    Zhu Zhengang; Su Gang; Jin Biao; Zheng Qingrong

    2003-01-01

    We have investigated the current-induced spin transfer torque of a ferromagnet-insulator-ferromagnet tunnel junction by taking the spin-flip scatterings into account. It is found that the spin-flip scattering can induce an additional spin torque, enhancing the maximum of the spin torque and giving rise to an angular shift compared to the case when the spin-flip scatterings are neglected. The effects of the molecular fields of the left and right ferromagnets on the spin torque are also studied. It is found that τ Rx /I e (τ Rx is the spin-transfer torque acting on the right ferromagnet and I e is the tunneling electrical current) does vary with the molecular fields. At two certain angles, τ Rx /I e is independent of the molecular field of the right ferromagnet, resulting in two crossing points in the curve of τ Rx /I e versus the relevant orientation for different molecular fields

  7. Improved PHIP polarization using a precision, low noise, voltage controlled current source.

    Science.gov (United States)

    Agraz, Jose; Grunfeld, Alexander; Cunningham, Karl; Li, Debiao; Wagner, Shawn

    2013-10-01

    Existing para-hydrogen induced polarization (PHIP) instrumentation relies on magnetic fields to hyperpolarize substances. These hyperpolarized substances have enhanced magnetic resonance imaging (MRI) signals over 10,000 fold, allowing for MRI at the molecular level. Required magnetic fields are generated by energizing a solenoid coil with current produced by a voltage controlled voltage source (VCVS), also known as a power supply. A VCVS lacks the current regulation necessary to keep magnetic field fluctuations to a minimum, which results in low PHIP polarization. A voltage controlled current source (VCCS) is an electric circuit that generates a steady flow of electrons proportional to an input voltage. A low noise VCCS provides the solenoid current flow regulation necessary to generate a stable static magnetic field (Bo). We discuss the design and implementation of a low noise, high stability, VCCS for magnetic field generation with minimum variations. We show that a precision, low noise, voltage reference driving a metal oxide semiconductor field effect transistor (MOSFET) based current sink, results in the current flow control necessary for generating a low noise and high stability Bo. In addition, this work: (1) compares current stability for ideal VCVS and VCCS models using transfer functions (TF), (2) develops our VCCS design's TF, (3) measures our VCCS design's thermal & 1/f noise, and (4) measures and compares hydroxyethyl-propionate (HEP) polarization obtained using a VCVS and our VCCS. The hyperpolarization of HEP was done using a PHIP instrument developed in our lab. Using our VCCS design, HEP polarization magnitude data show a statistically significant increase in polarization over using a VCVS. Circuit schematic, bill of materials, board layout, TF derivation, and Matlab simulations code are included as supplemental files. Copyright © 2013 Elsevier Inc. All rights reserved.

  8. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.

    2011-08-24

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

  9. Case-study of the evolution of polar-cap currents and auroral electrojets during polar geomagnetic disturbances with IMS magnetometer data

    Energy Technology Data Exchange (ETDEWEB)

    Iijima, T.; Kim, J.S. (State Univ. of New York, Albany (USA). Atmospheric Sciences Research Center); Sugiura, M. (National Aeronautics and Space Administration, Greenbelt, MD (USA). Goddard Space Flight Center)

    1984-06-01

    By using 1 min average data from the US-Canada IMS network stations (Alaska, east-west and Fort Churchill chains) and also standard magnetograms from stations in the polar-cap region and in the auroral zone, we have examined the development of polar-cap currents and the relationship of their development to the evolution of auroral electrojets during individual polar geomagnetic disturbances. Characteristics that have been determined are reported and discussed.

  10. Magnetic field and electric currents in the vicinity of polar cusps as inferred from Polar and Cluster data

    Directory of Open Access Journals (Sweden)

    N. A. Tsyganenko

    2009-04-01

    Full Text Available A detailed statistical study of the magnetic structure of the dayside polar cusps is presented, based on multi-year sets of magnetometer data of Polar and Cluster spacecraft, taken in 1996–2006 and 2001–2007, respectively. Thanks to the dense data coverage in both Northern and Southern Hemispheres, the analysis spanned nearly the entire length of the cusps, from low altitudes to the cusp "throat" and the magnetosheath. Subsets of data falling inside the polar cusp "funnels" were selected with the help of TS05 and IGRF magnetic field models, taking into account the dipole tilt and the solar wind/IMF conditions. The selection funnels were shifted within ±10° of SM latitude around the model cusp location, and linear regression parameters were calculated for each sliding subset, further divided into 10 bins of distance in the range 2≤R≤12 RE, with the following results. (1 Diamagnetic depression, caused by the penetrated magnetosheath plasma, becomes first visible at R~4–5 RE, rapidly deepens with growing R, peaks at R~6–9 RE, and then partially subsides and widens in latitude at the cusp's outer end. (2 The depression peak is systematically shifted poleward (by ~2° of the footpoint latitude with respect to the model cusp field line, passing through the min{|B|} point at the magnetopause. (3 At all radial distances, clear and distinct peaks of the correlation between the local By and By(IMF and of the corresponding proportionality coefficient are observed. A remarkably regular variation of that coefficient with R quantitatively confirms the field-aligned geometry of the cusp currents associated with the IMF By, found in earlier observations.

  11. Lithological characterization of a contaminated site using Direct current resistivity and time domain Induced Polarization

    DEFF Research Database (Denmark)

    Maurya, Pradip Kumar; Fiandaca, Gianluca; Auken, Esben

    study a large contaminated site in Denmark was investigated using direct current resistivity and time domain induced polarization (DCIP). For this purpose 14 profiles were collected alongside a stream in order to investigate the contamination and delineate the lithological units. 2D inversion using...

  12. Polarization Potential Has No Effect on Maximum Current Density Produced by Halotolerant Bioanodes

    Directory of Open Access Journals (Sweden)

    Muriel González-Muñoz

    2018-03-01

    Full Text Available Halotolerant bioanodes are considered an attractive alternative in microbial electrochemical systems, as they can operate under higher conductive electrolytes, in comparison with traditional wastewater and freshwater bioanodes. The dependency between energetic performance and polarization potential has been addressed in several works; however the vast majority discusses its effect when wastewater or freshwater inocula are employed, and fewer reports focus on inocula from highly-saline environments. Moreover, the effect of the polarization potential on current production is not fully understood. To determine if the polarization potential has a significant effect on current production, eight bioanodes were grown by chronoamperometry at positive and negative potentials relative to the reference electrode (+0.34 V/SHE and −0.16 V/SHE, in a three-electrode set-up employing sediments from a hyperhaline coastal lagoon. The maximum current density obtained was the same, despite the differences in the applied potential. Our findings indicate that even if differences in organic matter removal and coulombic efficiency are obtained, the polarization potential had no statistically significant effect on overall current density production.

  13. Polarized parton distributions from charged-current deep-inelastic scattering

    International Nuclear Information System (INIS)

    Ridolfi, G

    2003-01-01

    We investigate the capabilities of a neutrino factory in the determination of polarized parton distributions from charged-current deep-inelastic scattering experiments, with special attention to the accuracy of this kind of measurements. We show that a neutrino factory would allow to distinguish between different theoretical scenarios for the proton spin structure

  14. Spin injection in n-type resonant tunneling diodes.

    Science.gov (United States)

    Orsi Gordo, Vanessa; Herval, Leonilson Ks; Galeti, Helder Va; Gobato, Yara Galvão; Brasil, Maria Jsp; Marques, Gilmar E; Henini, Mohamed; Airey, Robert J

    2012-10-25

    We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.

  15. Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain

    International Nuclear Information System (INIS)

    Kim, Jeonghee; Laurent, Matthew A.; Li, Haoran; Lal, Shalini; Mishra, Umesh K.

    2015-01-01

    This letter reports the influence of the added InGaN interlayer on reducing the inherent interfacial barrier and hence improving the electrical characteristics of wafer-bonded current aperture vertical electron transistors consisting of an InGaAs channel and N-polar GaN drain. The current-voltage characteristics of the transistors show that the implementation of N-polar InGaN interlayer effectively reduces the barrier to electron transport across the wafer-bonded interface most likely due to its polarization induced downward band bending, which increases the electron tunneling probability. Fully functional wafer-bonded transistors with nearly 600 mA/mm of drain current at V GS  = 0 V and L go  = 2 μm have been achieved, and thus demonstrate the feasibility of using wafer-bonded heterostructures for applications that require active carrier transport through both materials

  16. Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

    DEFF Research Database (Denmark)

    Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.

    2003-01-01

    Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified...

  17. Dissolution of Platinum in Hydrochloric Acid Under Industrial-Scale Alternating Current Polarization

    Science.gov (United States)

    Myrzabekov, B. E.; Bayeshov, A. B.; Makhanbetov, A. B.; Mishra, B.; Baigenzhenov, O. S.

    2018-02-01

    The electrochemical behavior of platinum in a hydrochloric acid solution under polarization by an industrial-scale alternating current has been investigated. For the electrical dissolution of platinum, titanium is used as an auxiliary electrode, which increases the yield of platinum dissolution by 12.5 pct. The influence of the concentration of hydrochloric acid, the current densities of the platinum and titanium electrodes, and the temperature of the electrolyte on the efficiency of the process of dissolving platinum have all been studied.

  18. Pronounced Environmental Effects on Injection Currents in EGaln Tunneling Junctions Comprising Self-Assembled Monolayers

    NARCIS (Netherlands)

    Carlotti, Marco; Degen, Maarten; Zhang, Yanxi; Chiechi, Ryan C.

    2016-01-01

    Large-area tunneling junctions using eutectic Ga-In (EGaIn) as a top contact have proven to be a robust, reproducible, and technologically relevant platform for molecular electronics. Thus far, the majority of studies have focused on saturated molecules with backbones consisting mainly of alkanes in

  19. Direct current heating in superconductor-insulator-superconductor tunnel devices for THz mixing applications

    NARCIS (Netherlands)

    Dieleman, P; Klapwijk, T.M; Kovtonyuk, S.; van de Stadt, H.

    1996-01-01

    DC heating effects in superconductor-insulator-superconductor (SIS) tunnel junctions are studied by comparing junctions sandwiched between niobium or aluminum layers. With niobium a temperature rise of several Kelvin is observed, which is reduced by an order of magnitude by using aluminum. A simple

  20. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy.

    Science.gov (United States)

    Jeong, Jaewoo; Ferrante, Yari; Faleev, Sergey V; Samant, Mahesh G; Felser, Claudia; Parkin, Stuart S P

    2016-01-18

    Although high-tunnelling spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has been no experimental observation to date of high-tunnelling magnetoresistance in the latter. Here we report the preparation of highly textured, polycrystalline Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields exceeding 7 T, making them technologically relevant. However, the small and negative tunnelling magnetoresistance that we find is attributed to predominant tunnelling from the lower moment Mn-Ge termination layers that are oppositely magnetized to the higher moment Mn-Mn layers. The net spin polarization of the current reflects the different proportions of the two distinct termination layers and their associated tunnelling matrix elements that result from inevitable atomic scale roughness. We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible.

  1. Development of a high average current polarized electron source with long cathode operational lifetime

    Directory of Open Access Journals (Sweden)

    C. K. Sinclair

    2007-02-01

    Full Text Available Substantially more than half of the electromagnetic nuclear physics experiments conducted at the Continuous Electron Beam Accelerator Facility of the Thomas Jefferson National Accelerator Facility (Jefferson Laboratory require highly polarized electron beams, often at high average current. Spin-polarized electrons are produced by photoemission from various GaAs-based semiconductor photocathodes, using circularly polarized laser light with photon energy slightly larger than the semiconductor band gap. The photocathodes are prepared by activation of the clean semiconductor surface to negative electron affinity using cesium and oxidation. Historically, in many laboratories worldwide, these photocathodes have had short operational lifetimes at high average current, and have often deteriorated fairly quickly in ultrahigh vacuum even without electron beam delivery. At Jefferson Lab, we have developed a polarized electron source in which the photocathodes degrade exceptionally slowly without electron emission, and in which ion back bombardment is the predominant mechanism limiting the operational lifetime of the cathodes during electron emission. We have reproducibly obtained cathode 1/e dark lifetimes over two years, and 1/e charge density and charge lifetimes during electron beam delivery of over 2×10^{5}   C/cm^{2} and 200 C, respectively. This source is able to support uninterrupted high average current polarized beam delivery to three experimental halls simultaneously for many months at a time. Many of the techniques we report here are directly applicable to the development of GaAs photoemission electron guns to deliver high average current, high brightness unpolarized beams.

  2. Thermally Stimulated Current and Polarization Fatigue in Pb(Zr,Ti)O3 Thin Films

    Science.gov (United States)

    Okino, Hirotake; Toyoda, Yoshiaki; Shimizu, Masaru; Horiuchi, Toshihisa; Shiosaki, Tadashi; Matsushige, Kazumi

    1998-09-01

    In order to clarify the origin of the polarization fatigue phenomena,charge traps in ferroelectric Pb(Zr,Ti)O3 (PZT) thin filmswere measured using the thermally stimulated current (TSC) technique.For polarization fatigued Pt/PZT/Pt/SiO2/Si(100) capacitors,a peak of TSC was observed, andthe trap density estimated from the TSC dataincreased as switching cycles increased.Activation energy and density of the charge trapswere estimated to be 0.7 0.8 eV andon the order of 1018 cm-3,respectively.It was also observed thatdegradation of remanent polarization of PZTwas improved by the TSC measurement process.On the other hand, no TSC peak was observed forfatigue free Ir/PZT/Ir/IrO2/SiO2/Si(100) capacitors.From these results, it was suggested thatthe main origin of the polarization fatigue phenomenawas the domain pinning caused by trapped charge carriersinjected by polarization reversal.

  3. Recognition tunneling

    International Nuclear Information System (INIS)

    Lindsay, Stuart; He Jin; Zhang Peiming; Chang Shuai; Huang Shuo; Sankey, Otto; Hapala, Prokop; Jelinek, Pavel

    2010-01-01

    Single molecules in a tunnel junction can now be interrogated reliably using chemically functionalized electrodes. Monitoring stochastic bonding fluctuations between a ligand bound to one electrode and its target bound to a second electrode ('tethered molecule-pair' configuration) gives insight into the nature of the intermolecular bonding at a single molecule-pair level, and defines the requirements for reproducible tunneling data. Simulations show that there is an instability in the tunnel gap at large currents, and this results in a multiplicity of contacts with a corresponding spread in the measured currents. At small currents (i.e. large gaps) the gap is stable, and functionalizing a pair of electrodes with recognition reagents (the 'free-analyte' configuration) can generate a distinct tunneling signal when an analyte molecule is trapped in the gap. This opens up a new interface between chemistry and electronics with immediate implications for rapid sequencing of single DNA molecules. (topical review)

  4. Recognition tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Lindsay, Stuart; He Jin; Zhang Peiming; Chang Shuai; Huang Shuo [Biodesign Institute, Arizona State University, Tempe, AZ 85287 (United States); Sankey, Otto [Department of Physics, Arizona State University, Tempe, AZ 85287 (United States); Hapala, Prokop; Jelinek, Pavel [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 1862 53, Prague (Czech Republic)

    2010-07-02

    Single molecules in a tunnel junction can now be interrogated reliably using chemically functionalized electrodes. Monitoring stochastic bonding fluctuations between a ligand bound to one electrode and its target bound to a second electrode ('tethered molecule-pair' configuration) gives insight into the nature of the intermolecular bonding at a single molecule-pair level, and defines the requirements for reproducible tunneling data. Simulations show that there is an instability in the tunnel gap at large currents, and this results in a multiplicity of contacts with a corresponding spread in the measured currents. At small currents (i.e. large gaps) the gap is stable, and functionalizing a pair of electrodes with recognition reagents (the 'free-analyte' configuration) can generate a distinct tunneling signal when an analyte molecule is trapped in the gap. This opens up a new interface between chemistry and electronics with immediate implications for rapid sequencing of single DNA molecules. (topical review)

  5. Current-voltage characteristics of a tunnel junction with resonant centers

    International Nuclear Information System (INIS)

    Ivanov, T.; Valtchinov, V.

    1994-05-01

    We calculated the I-V characteristics of a tunnel junction containing impurities in the barrier. We consider the indirect resonant tunneling involving the impurities. The Coulomb repulsion energy E c between two electrons with opposite spins simultaneously residing on the impurity is introduced by an Anderson Hamiltonian. At low temperatures T is much less than E c the I-V characteristics is linear in V both for V c and for V>E c and changes slope at V=E c . This behaviour reflects the energy spectrum of the impurity electrons - the finite value of the charging energy E c . At T ∼ E c the junction reveals an ohmic-like behaviour as a result of the smearing out of the charging effects by the thermal fluctuations. (author). 10 refs, 2 figs

  6. Influence of Neutral Currents on Electron and Gamma Polarizations in the Process e+N→e′+N+γ

    International Nuclear Information System (INIS)

    Ousmane Manga, Adamou; Moussa, Aboubacar; Aboubacar, Almoustapha; Samsonenko, N. V.

    2014-01-01

    The differential cross section of electron inelastic scattering by nuclei followed by γ radiation is calculated using the multipole decomposition of the hadronic currents and by taking into account the longitudinal polarization of the initial electron and the circular polarization of the γ radiation. We performed the analysis of the angular and energy dependence of the degree of electron and photon polarization which can yield information on values of weak neutral currents parameters

  7. Semiclassical description of resonant tunnel effect: bifurcations and periodic orbits in the resonant current; Description semiclassique de l`effet tunnel resonant: bifurcations et orbites periodiques dans le courant resonant

    Energy Technology Data Exchange (ETDEWEB)

    Rouben, D.C

    1997-11-28

    A semiclassical method for resonant tunneling in a quantum well in the presence of a magnetic field tilted with regard to an electric field is developed. In particular a semiclassical formula is derived for the total current of electrons after the second barrier of the quantum well. The contribution of the stable and unstable orbits is studied. It appears that the parameters which describe the classical chaos in the quantum well have an important effect on the tunneling current. A numerical experiment is led, the contributions to the current of some particular orbits are evaluated and the results are compared with those given by the quantum theory. (A.C.) 70 refs.

  8. Stochastic macromodel of magnetic tunnel junction resistance variation and critical current dependence on resistance variation for SPICE simulation

    Science.gov (United States)

    Choi, Juntae; Song, Yunheub

    2017-04-01

    The resistance distribution of a magnetic tunnel junction (MTJ) shows nonuniformity according to various MTJ parameters. Moreover, this resistance variation leads to write-current density variation, which can cause serious problems when designing peripheral circuits for spin transfer torque magnetoresistance random access memory (STT-MRAM) and commercializing gigabit STT-MRAM. Therefore, a macromodel of MTJ including resistance, tunneling magnetoresistance ratio (TMR), and critical current variations is required for circuit designers to design MRAM peripheral circuits, that can overcome the various effects of the variations, such as write failure and read failure, and realize STT-MRAM. In this study, we investigated a stochastic behavior macromodel of the write current dependence on the MTJ resistance variation. The proposed model can possibly be used to analyze the write current density in relation to the resistance and TMR variations of MTJ with various parameter variations. It can be very helpful for designing STT-MRAM circuits and simulating the operation of STT-MRAM devices considering MTJ variations.

  9. Multiscale modeling of current-induced switching in magnetic tunnel junctions using ab initio spin-transfer torques

    Science.gov (United States)

    Ellis, Matthew O. A.; Stamenova, Maria; Sanvito, Stefano

    2017-12-01

    There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.

  10. The possibility to determine a constant of spin-orbit interaction by scanning tunneling microscopy method

    International Nuclear Information System (INIS)

    Khotkevich, N.V.; Kolesnichenko, Yu.A.; Vovk, N.P.

    2016-01-01

    The electron tunneling from the quasi-two-dimensional (surface) states with the spin-orbit interaction into bulk-mode states is studied in the framework of a model of an infinitely thin inhomogeneous tunnel magnetic barrier. The influence of the scattering of quasi-two-dimensional electrons by a single magnetic defect on the tunnel current is analyzed. Analytic formulas for the conductance of a tunnel point-contact as a function of its distance from the defect are obtained. It is shown that the analysis of the local magnetization density around the defect by means of spin-polarized scanning tunneling microscopy allows finding the constant of spin orbit interaction.

  11. Tunnel diode amplifiers and their background noise as a function of the polarization point, the temperature, and the bandwidth

    International Nuclear Information System (INIS)

    Ozveaminian, K.

    1969-01-01

    The author presents mathematical and graphical methods for the study of the stability of tunnel diode circuits. He gives an application to the realization of three amplifiers. Then he describes a theoretical and experimental investigation of the noise of these amplifiers and of its variations with the bias, the temperature and the bandwidth. (author) [fr

  12. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

    Science.gov (United States)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

    2014-04-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  13. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

    2014-01-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  14. Demographic and traditional knowledge perspectives on the current status of Canadian polar bear subpopulations.

    Science.gov (United States)

    York, Jordan; Dowsley, Martha; Cornwell, Adam; Kuc, Miroslaw; Taylor, Mitchell

    2016-05-01

    Subpopulation growth rates and the probability of decline at current harvest levels were determined for 13 subpopulations of polar bears (Ursus maritimus) that are within or shared with Canada based on mark-recapture estimates of population numbers and vital rates, and harvest statistics using population viability analyses (PVA). Aboriginal traditional ecological knowledge (TEK) on subpopulation trend agreed with the seven stable/increasing results and one of the declining results, but disagreed with PVA status of five other declining subpopulations. The decline in the Baffin Bay subpopulation appeared to be due to over-reporting of harvested numbers from outside Canada. The remaining four disputed subpopulations (Southern Beaufort Sea, Northern Beaufort Sea, Southern Hudson Bay, and Western Hudson Bay) were all incompletely mark-recapture (M-R) sampled, which may have biased their survival and subpopulation estimates. Three of the four incompletely sampled subpopulations were PVA identified as nonviable (i.e., declining even with zero harvest mortality). TEK disagreement was nonrandom with respect to M-R sampling protocols. Cluster analysis also grouped subpopulations with ambiguous demographic and harvest rate estimates separately from those with apparently reliable demographic estimates based on PVA probability of decline and unharvested subpopulation growth rate criteria. We suggest that the correspondence between TEK and scientific results can be used to improve the reliability of information on natural systems and thus improve resource management. Considering both TEK and scientific information, we suggest that the current status of Canadian polar bear subpopulations in 2013 was 12 stable/increasing and one declining (Kane Basin). We do not find support for the perspective that polar bears within or shared with Canada are currently in any sort of climate crisis. We suggest that monitoring the impacts of climate change (including sea ice decline) on polar bear

  15. In-plane tunneling anisotropic magnetoresistance in (Ga,Mn)As/GaAs Esaki diodes in the regime of the excess current

    Energy Technology Data Exchange (ETDEWEB)

    Shiogai, J. [Department of Materials Science, Tohoku University, Sendai 980-8579, Miyagi (Japan); Institute of Materials Research, Tohoku University, Sendai 980-8577, Miyagi (Japan); Ciorga, M., E-mail: mariusz.ciorga@ur.de; Utz, M.; Schuh, D.; Bougeard, D.; Weiss, D. [Institute of Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg (Germany); Kohda, M.; Nitta, J. [Department of Materials Science, Tohoku University, Sendai 980-8579, Miyagi (Japan); Nojima, T. [Institute of Materials Research, Tohoku University, Sendai 980-8577, Miyagi (Japan)

    2015-06-29

    We investigate the angular dependence of the tunneling anisotropic magnetoresistance in (Ga,Mn)As/n-GaAs spin Esaki diodes in the regime where the tunneling process is dominated by the excess current through midgap states in (Ga,Mn)As. We compare it to similar measurements performed in the regime of band-to-band tunneling. Whereas the latter show biaxial symmetry typical for magnetic anisotropy observed in (Ga,Mn)As samples, the former is dominated by uniaxial anisotropy along the 〈110〉 axes.

  16. Quasienergy spectrum and tunneling current in ac-driven triple quantum dot shuttles

    Energy Technology Data Exchange (ETDEWEB)

    Villavicencio, J [Facultad de Ciencias, Universidad Autonoma de Baja California, Ensenada (Mexico); Maldonado, I [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada (Mexico); Cota, E [Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autonoma de Mexico, Ensenada (Mexico); Platero, G, E-mail: villavics@uabc.edu.mx [Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049 Madrid (Spain)

    2011-02-15

    The dynamics of electrons in ac-driven double quantum dots have been extensively analyzed by means of Floquet theory. In these systems, coherent destruction of tunneling has been shown to occur for certain ac field parameters. In this work we analyze, by means of Floquet theory, the electron dynamics of a triple quantum dot in series attached to electric contacts, where the central dot position oscillates. In particular, we analyze the quasienergy spectrum of this ac-driven nanoelectromechanical system as a function of the intensity and frequency of the ac field and of external dc voltages. For strong driving fields, we derive, by means of perturbation theory, analytical expressions for the quasienergies of the driven oscillator system. From this analysis, we discuss the conditions for coherent destruction of tunneling (CDT) to occur as a function of detuning and field parameters. For zero detuning, and from the invariance of the Floquet Hamiltonian under a generalized parity transformation, we find analytical expressions describing the symmetry properties of the Fourier components of the Floquet states under such a transformation. By using these expressions, we show that in the vicinity of the CDT condition, the quasienergy spectrum exhibits exact crossings which can be characterized by the parity properties of the corresponding eigenvectors.

  17. Strata control in tunnels and an evaluation of support units and systems currently used with a view to improving the effectiveness of support stability and safety of tunnels.

    CSIR Research Space (South Africa)

    Haile, AT

    1995-12-01

    Full Text Available This project report addresses the issue of strata control in tunnel excavations with the aim of improving the stability of the excavation through improved design methodologies and support systems....

  18. Real-space observation of a right-rotating inhomogeneous cycloidal spin spiral by spin-polarized scanning tunneling microscopy in a triple axes vector magnet.

    Science.gov (United States)

    Meckler, S; Mikuszeit, N; Pressler, A; Vedmedenko, E Y; Pietzsch, O; Wiesendanger, R

    2009-10-09

    Using spin-polarized scanning tunneling microscopy performed in a triple axes vector magnet, we show that the magnetic structure of the Fe double layer on W(110) is an inhomogeneous right-rotating cycloidal spin spiral. The magnitude of the Dzyaloshinskii-Moriya vector is extracted from the experimental data using micromagnetic calculations. The result is confirmed by comparison of the measured saturation field along the easy axis to the respective value as obtained from Monte Carlo simulations. We find that the Dzyaloshinskii-Moriya interaction is too weak to destabilize the single domain state. However, it can define the sense of rotation and the cycloidal spiral type once the single domain state is destabilized by dipolar interaction.

  19. Tunneling magnetoresistance and electroresistance in Fe/PbTiO3/Fe multiferroic tunnel junctions

    International Nuclear Information System (INIS)

    Dai, Jian-Qing

    2016-01-01

    We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO 3 /Fe multiferroic tunnel junction with asymmetric TiO 2 - and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p z orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.

  20. On the limit of field-aligned current intensity in the polar magnetosphere

    International Nuclear Information System (INIS)

    Cole, K.D.

    1991-01-01

    Field-aligned current (FAC) is here defined by 4πj=αβ, where α is constant along a magnetic field line. The upper limit value of α in the polar magnetosphere, possible source regions of the strongest FAC and the relationship of them to some auroral and ionospheric irregularity cross-field scale sizes are discussed. Cross-field dimensions of the strongest FAC are related to the gyroradii of source particles (O + , He ++ , H + , E) in the current-generating region. It is suggested that experimental determination, and mapping of the values of α, may assist with the search for the generators of such currents in near-Earth space including in the nearby solar wind. The authors associate the upper limit of α with the breakup of FAC systems

  1. Investigation of Current Induced Spin Polarization in III-V Semiconductor Epilayers

    Science.gov (United States)

    Luengo-Kovac, Marta

    In the development of a semiconductor spintronics device, a thorough understanding of spin dynamics in semiconductors is necessary. In particular, electrical control of electron spins is advantageous for its compatibility with present day electronics. In this thesis, we will discuss the electrical modification of the electron g-factor, which characterizes the strength of the interaction between a spin and a magnetic field, as well as investigate electrically generated spin polarizations as a function of various material parameters. We report on the modification of the electron g-factor by an in-plane electric field in an InGaAs epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to measure the g-factor independently of the spin-orbit fields. The g-factor increases from -0.4473(0.0001) at 0 V/cm to -0.4419( 0.0001) at 50 V/cm applied along the [110] crystal axis. A comparison of temperature and voltage dependent photoluminescence measurements indicate that minimal channel heating occurs at these voltages. Possible explanations for this g-factor modification are discussed, including an increase in the electron temperature that is independent of the lattice temperature and the modification of the donor-bound electron wave function by the electric field. The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InGaAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the spin polarization mechanism is extrinsic. Temperature-dependent measurements of the spin dephasing rates and mobilities were used to characterize the relative strengths of the intrinsic D

  2. Current evidence for effectiveness of interventions for cubital tunnel syndrome, radial tunnel syndrome, instability, or bursitis of the elbow: a systematic review.

    Science.gov (United States)

    Rinkel, Willem D; Schreuders, Ton A R; Koes, Bart W; Huisstede, Bionka M A

    2013-12-01

    To provide an evidence-based overview of the effectiveness of interventions for 4 nontraumatic painful disorders sharing the anatomic region of the elbow: cubital tunnel syndrome, radial tunnel syndrome, elbow instability, and olecranon bursitis. The Cochrane Library, PubMed, Embase, PEDro, and CINAHL were searched to identify relevant reviews and randomized clinical trials (RCTs). Two reviewers independently extracted data and assessed the quality of the methodology. A best-evidence synthesis was used to summarize the results. One systematic review and 6 RCTs were included. For the surgical treatment of cubital tunnel syndrome (1 review, 3 RCTs), comparing simple decompression with anterior ulnar nerve transposition, no evidence was found in favor of either one of these. Limited evidence was found in favor of medial epicondylectomy versus anterior transposition and for early postoperative therapy versus immobilization. No evidence was found for the effect of local steroid injection in addition to splinting. No RCTs were found for radial tunnel syndrome. For olecranon bursitis (1 RCT), limited evidence for effectiveness was found for methylprednisolone acetate injection plus naproxen. Concerning elbow instability, including 2 RCTs, one showed that nonsurgical treatment resulted in similar results compared with surgery, whereas the other found limited evidence for the effectiveness in favor of early mobilization versus 3 weeks of immobilization after surgery. In this review no, or at best, limited evidence was found for the effectiveness of nonsurgical and surgical interventions to treat painful cubital tunnel syndrome, radial tunnel syndrome, elbow instability, or olecranon bursitis. Well-designed and well-conducted RCTs are clearly needed in this field.

  3. Valley and spin resonant tunneling current in ferromagnetic/nonmagnetic/ferromagnetic silicene junction

    Directory of Open Access Journals (Sweden)

    Yaser Hajati

    2016-02-01

    Full Text Available We study the transport properties in a ferromagnetic/nonmagnetic/ferromagnetic (FNF silicene junction in which an electrostatic gate potential, U, is attached to the nonmagnetic region. We show that the electrostatic gate potential U is a useful probe to control the band structure, quasi-bound states in the nonmagnetic barrier as well as the transport properties of the FNF silicene junction. In particular, by introducing the electrostatic gate potential, both the spin and valley conductances of the junction show an oscillatory behavior. The amplitude and frequency of such oscillations can be controlled by U. As an important result, we found that by increasing U, the second characteristic of the Klein tunneling is satisfied as a result of the quasiparticles chirality which can penetrate through a potential barrier. Moreover, it is found that for special values of U, the junction shows a gap in the spin and valley-resolve conductance and the amplitude of this gap is only controlled by the on-site potential difference, Δz. Our findings of high controllability of the spin and valley transport in such a FNF silicene junction may improve the performance of nano-electronics and spintronics devices.

  4. Harmonic Mitigation Using a Polarized Ramp-time Current-Controlled Inverter

    Directory of Open Access Journals (Sweden)

    Lawrence J. Borle

    2010-12-01

    Full Text Available This paper describes the implementation of a shunt active power filter for a three-phase four-wire system to compensate for power quality problems generated by mixed non-linear loads, which are a combination of harmonic, reactive and unbalanced components. The filter is a three-phase current-controlled voltage source inverter (CC-VSI with a filter inductor at the AC output and a DC-bus capacitor. The CC-VSI is operated to directly control the grid current to be sinusoidal and in phase with the grid voltage without sensing the load currents. The switching is controlled using polarized ramp-time current control, which is based on the concept of zero average current error (ZACE with a fixed switching frequency. The laboratory experiment results indicate that the filter is able to mitigate predominantly the harmonics, as well as the reactive power, so that the grid currents are sinusoidal, in phase with the grid voltages and symmetrical although the grid voltage contains harmonics.

  5. Enhancing current-induced torques by abutting additional spin polarizer layer to nonmagnetic metal layer

    Science.gov (United States)

    Go, Gyungchoon; Lee, Kyung-Jin; Kim, Young Keun

    2017-04-01

    Recently, the switching of a perpendicularly magnetized ferromagnet (FM) by injecting an in-plane current into an attached non-magnet (NM) has become of emerging technological interest. This magnetization switching is attributed to the spin-orbit torque (SOT) originating from the strong spin-orbit coupling of the NM layer. However, the switching efficiency of the NM/FM structure itself may be insufficient for practical use, as for example, in spin transfer torque (STT)-based magnetic random access memory (MRAM) devices. Here we investigate spin torque in an NM/FM structure with an additional spin polarizer (SP) layer abutted to the NM layer. In addition to the SOT contribution, a spin-polarized current from the SP layer creates an extra spin chemical potential difference at the NM/FM interface and gives rise to a STT on the FM layer. We show that, using typical parameters including device width, thickness, spin diffusion length, and the spin Hall angle, the spin torque from the SP layer can be much larger than that from the spin Hall effect (SHE) of the NM.

  6. Differences between signal currents for both polarities of applied voltages on cavity ionization chambers

    International Nuclear Information System (INIS)

    Takata, N.

    2000-01-01

    It is necessary to obtain precise values of signal currents for the measurement of exposure rates for gamma rays with cavity ionization chambers. Signal currents are usually expected to have the same absolute values for both polarities of applied voltages. In the case of cylindrical cavity ionization chambers, volume recombination loss of ion pairs depends on the polarity of the applied voltage. This is because the values of mobility are different for positive and negative ions. It was found, however, that values of signal currents from a cylindrical ionization chamber change slightly more with a negative than with a positive applied voltage, even after being corrected for volume recombination loss. Moreover, absolute values of saturation currents, which are obtained by extrapolation of correction of initial recombination and diffusion loss, were larger for the negative than for the positive applied voltage. It is known from an experiment with parallel plate ionization chambers that when negative voltage is applied to the repeller electrode, the saturated signal current decreases with an increase in the applied voltage. This is because secondary electrons are accelerated and the stopping power of air for these electrons decreases. When positive voltage is applied, the reverse is true. The effects of acceleration and deceleration of secondary electrons by the electric field thus seem to cause a tendency opposite to the experimental results on the signal currents from cylindrical ionization chambers. The experimental results for the cylindrical ionization chamber can be explained as follows. When negative voltage is applied, secondary electrons are attracted to the central (collecting) electrode. Consequently, the path length of the trajectories of these secondary electrons in the ionization volume increases and signal current increases. The energy gain from the electric field by secondary electrons which stop in the ionization chamber also contributes to the

  7. Fabrication of magnetic tunnel junctions with a single-crystalline LiF tunnel barrier

    Science.gov (United States)

    Krishna Narayananellore, Sai; Doko, Naoki; Matsuo, Norihiro; Saito, Hidekazu; Yuasa, Shinji

    2018-04-01

    We fabricated Fe/LiF/Fe magnetic tunnel junctions (MTJs) by molecular beam epitaxy on a MgO(001) substrate, where LiF is an insulating tunnel barrier with the same crystal structure as MgO (rock-salt type). Crystallographical studies such as transmission electron microscopy and nanobeam electron diffraction observations revealed that the LiF tunnel barrier is single-crystalline and has a LiF(001)[100] ∥ bottom Fe(001)[110] crystal orientation, which is constructed in the same manner as MgO(001) on Fe(001). Also, the in-plane lattice mismatch between the LiF tunnel barrier and the Fe bottom electrode was estimated to be small (about 0.5%). Despite such advantages for the tunnel barrier of the MTJ, the observed tunnel magnetoresistance (MR) ratio was low (˜6% at 20 K) and showed a significant decrease with increasing temperature (˜1% at room temperature). The results imply that indirect tunneling and/or thermally excited carriers in the LiF tunnel barrier, in which the current basically is not spin-polarized, play a major role in electrical transport in the MTJ.

  8. A linearly controlled direct-current power source for high-current inductive loads in a magnetic suspension wind tunnel

    Science.gov (United States)

    Tripp, John S.; Daniels, Taumi S.

    1990-01-01

    The NASA Langley 6 inch magnetic suspension and balance system (MSBS) requires an independently controlled bidirectional DC power source for each of six positioning electromagnets. These electromagnets provide five-degree-of-freedom control over a suspended aerodynamic test model. Existing power equipment, which employs resistance coupled thyratron controlled rectifiers as well as AC to DC motor generator converters, is obsolete, inefficient, and unreliable. A replacement six phase bidirectional controlled bridge rectifier is proposed, which employs power MOSFET switches sequenced by hybrid analog/digital circuits. Full load efficiency is 80 percent compared to 25 percent for the resistance coupled thyratron system. Current feedback provides high control linearity, adjustable current limiting, and current overload protection. A quenching circuit suppresses inductive voltage impulses. It is shown that 20 kHz interference from positioning magnet power into MSBS electromagnetic model position sensors results predominantly from capacitively coupled electric fields. Hence, proper shielding and grounding techniques are necessary. Inductively coupled magnetic interference is negligible.

  9. Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions

    Science.gov (United States)

    Sato, H.; Yamanouchi, M.; Miura, K.; Ikeda, S.; Gan, H. D.; Mizunuma, K.; Koizumi, R.; Matsukura, F.; Ohno, H.

    2011-07-01

    Junction size dependence of critical current (IC0) for spin transfer torque switching and thermal stability factor (E/kBT) was examined in CoFeB/MgO perpendicular magnetic tunnel junctions (p-MTJs). The IC0 increased with increasing recording layer area (Srec). On the other hand, the E/kBT showed almost constant values even though the Srec was increased from ˜1500 nm2 (44 nmφ) to ˜5000 nm2 (76 nmφ). Both IC0 and E/kBT behavior can be explained with assuming that the nucleation type magnetization reversal takes place in CoFeB/MgO p-MTJs.

  10. Magnetic reconstruction induced magnetoelectric coupling and spin-dependent tunneling in Ni/KNbO3/Ni multiferroic tunnel junctions

    International Nuclear Information System (INIS)

    Zhang, Hu; Dai, Jian-Qing; Song, Yu-Min

    2016-01-01

    We investigate the magnetoelectric coupling and spin-polarized tunneling in Ni/KNbO 3 /Ni multiferroic tunnel junctions with asymmetric interfaces based on density functional theory. The junctions have two stable polarization states. We predict a peculiar magnetoelectric effect in such junctions originating from the magnetic reconstruction of Ni near the KO-terminated interface. This reconstruction is induced by the reversal of the ferroelectric polarization of KNbO 3 . Furthermore, the change in the magnetic ordering filters the spin-dependent current. This effect leads to a change in conductance by about two orders of magnitude. As a result we obtain a giant tunneling electroresistance effect. In addition, there exist sizable tunneling magnetoresistance effects for two polarization states. - Highlights: • We study the ME coupling and electron tunneling in Ni/KNbO 3 /Ni junctions. • There is magnetic reconstruction of Ni atoms near the KO-terminated interface. • A peculiar magnetoelectric coupling effect is obtained. • Predicted giant tunneling electroresistance effects.

  11. Photoinduced electric currents in ring-shaped molecules by circularly polarized laser pulses

    International Nuclear Information System (INIS)

    Nobusada, Katsuyuki; Yabana, Kazuhiro

    2007-01-01

    We have theoretically demonstrated that circularly polarized laser pulses induce electric currents and magnetic moments in ring-shaped molecules Na 10 and benzene. The time-dependent adiabatic local density approximation is employed for this purpose, solving the time-dependent Kohn-Sham equation in real space and real time. It has been found that the electric currents are induced efficiently and persist continuously even after the laser pulses were switched off provided the frequency of the applied laser pulse is in tune with the excitation energy of the electronic excited state with the dipole strength for each molecular system. The electric currents are definitely revealed to be a second-order nonlinear optical response to the magnitude of the electric field. The magnetic dipole moments inevitably accompany the ring currents, so that the molecules are magnetized. The production of the electric currents and the magnetic moments in the present procedure is found to be much more efficient than that utilizing static magnetic fields

  12. Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

    Science.gov (United States)

    Luengo-Kovac, M.; Huang, S.; Del Gaudio, D.; Occena, J.; Goldman, R. S.; Raimondi, R.; Sih, V.

    2017-11-01

    The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InxGa1 -xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.

  13. Mapping geological structures in bedrock via large-scale direct current resistivity and time-domain induced polarization tomography

    DEFF Research Database (Denmark)

    Rossi, Matteo; Olsson, Per-Ivar; Johansson, Sara

    2017-01-01

    An investigation of geological conditions is always a key point for planning infrastructure constructions. Bedrock surface and rock quality must be estimated carefully in the designing process of infrastructures. A large direct-current resistivity and time-domain induced-polarization survey has......, there are northwest-trending Permian dolerite dykes that are less deformed. Four 2D direct-current resistivity and time-domain induced-polarization profiles of about 1-km length have been carefully pre-processed to retrieve time-domain induced polarization responses and inverted to obtain the direct......-current resistivity distribution of the subsoil and the phase of the complex conductivity using a constant-phase angle model. The joint interpretation of electrical resistivity and induced-polarization models leads to a better understanding of complex three-dimensional subsoil geometries. The results have been...

  14. Joint Polar Satellite System (JPSS) Common Ground System (CGS) Current Technical Performance Measures

    Science.gov (United States)

    Cochran, S.; Panas, M.; Jamilkowski, M. L.; Miller, S. W.

    2015-12-01

    ABSTRACT The National Oceanic and Atmospheric Administration (NOAA) and National Aeronautics and Space Administration (NASA) are jointly acquiring the next-generation civilian weather and environmental satellite system: the Joint Polar Satellite System (JPSS). The Joint Polar Satellite System will replace the afternoon orbit component and ground processing system of the current Polar-orbiting Operational Environmental Satellites (POES) managed by NOAA. The JPSS satellites will carry a suite of sensors designed to collect meteorological, oceanographic, climatological and geophysical observations of the Earth. The ground processing system for JPSS is known as the JPSS Common Ground System (JPSS CGS). Developed and maintained by Raytheon Intelligence, Information and Services (IIS), the CGS is a multi-mission enterprise system serving NOAA, NASA and their national and international partners. The CGS has demonstrated its scalability and flexibility to incorporate multiple missions efficiently and with minimal cost, schedule and risk, while strengthening global partnerships in weather and environmental monitoring. The CGS architecture is being upgraded to Block 2.0 in 2015 to "operationalize" S-NPP, leverage lessons learned to date in multi-mission support, take advantage of more reliable and efficient technologies, and satisfy new requirements and constraints in the continually evolving budgetary environment. To ensure the CGS meets these needs, we have developed 49 Technical Performance Measures (TPMs) across 10 categories, such as data latency, operational availability and scalability. This paper will provide an overview of the CGS Block 2.0 architecture, with particular focus on the 10 TPM categories listed above. We will provide updates on how we ensure the deployed architecture meets these TPMs to satisfy our multi-mission objectives with the deployment of Block 2.0.

  15. The influence of current mood state, number of previous affective episodes and predominant polarity on insight in bipolar disorder.

    Science.gov (United States)

    de Assis da Silva, Rafael; Mograbi, Daniel C; Camelo, Evelyn Vieira Miranda; Peixoto, Ursula; Santana, Cristina Maria Teixeira; Landeira-Fernandez, Jesus; Morris, Robin G; Cheniaux, Elie

    2017-11-01

    Although many studies have explored the effect of current affective episodes on insight into bipolar disorder, the potential interaction between current mood state and previous affective episodes has not been consistently investigated. To explore the influence of dominant polarity, number of previous affective episodes and current affective state on insight in bipolar disorder patients in euthymia or mania. A total of 101 patients with bipolar disorder were recruited for the study, including 58 patients in euthymia (30 with no defined predominant polarity and 28 with manic predominant polarity) and 43 in mania (26 with no defined predominant polarity and 17 with manic predominant polarity). Patients underwent a clinical assessment and insight was evaluated through the Insight Scale for Affective Disorders. Bipolar disorder patients in mania had worse insight than those in euthymia, with no effect of dominant polarity. In addition, positive psychotic symptoms showed a significant effect on insight and its inclusion as a covariate eliminated differences related to mood state. Finally, the number of previous manic or depressive episodes did not correlate with insight level. Mania is a predictor of loss of insight into bipolar disorder. However, it is possible that its contribution is linked to the more frequent presence of psychotic symptoms in this state. Dominant polarity and number/type of previous affective episodes have a limited impact on insight.

  16. Domain Wall Dynamics Driven by a Localized Injection of a Spin-Polarized Current

    Science.gov (United States)

    Finocchio, Giovanni; Maugeri, Natale; Torres, Luis; Azzerboni, Bruno

    2010-06-01

    This paper introduces an oscillator scheme based on the oscillations of magnetic domain walls due to spin-polarized currents, where the current is injected perpendicular to the sample plane in a localized part of a nanowire. Depending on the geometrical and physical characteristic of the system, we identify two different dynamical regimes (auto-oscillations) when an out-of-plane external field is applied. The first regime is characterized by nucleation of domain walls (DWs) below the current injection site and the propagation of those up to the end of the nanowire, we also found an oscillation frequency larger than 5GHz with a linear dependence on the applied current density. This simple system can be used as a tuneable steady-state domain wall oscillator. In the second dynamical regime, we observe the nucleation of two DWs which propagate back and forth in the nanowire with a sub-GHz oscillation frequency. The micromagnetic spectral mapping technique shows the spatial distribution of the output power is localized symmetrically in the nanowire. We suggest that this configuration can be used as micromagnetic transformer to decouple electrically two different circuits.

  17. Spin-polarized scanning tunneling microscopy of magnetic nanostructures at the example of bcc-Co/Fe(110), Fe/Mo(110), and copper phthalocyanine/Fe(1110); Spinpolarisierte Rastertunnelmikroskopie magnetischer Nanostrukturen am Beispiel von bcc-Co/Fe(110), Fe/Mo(110) und Kupfer-Phthalocyanin/Fe(110)

    Energy Technology Data Exchange (ETDEWEB)

    Methfessel, Torsten

    2010-12-09

    gap of the free molecule is filled with interface states. These states reduce the spin-polarization of the tunneling current through the molecule by an additional unpolarized current contribution, which leads to an energy-independent reduction of the spin-polarization by a factor of two. Spin-polarized interface states with larger distance from the Fermi-edge lead to further contributions to the effective spinpolarization that are different for ligands and center positions. These studies demonstrate the possibility of an efficient spin injection into organic semiconductors, and thus the potential of these materials for further development of spintronic devices. (orig.)

  18. Ferroelectric tunnel junctions for information storage and processing.

    Science.gov (United States)

    Garcia, Vincent; Bibes, Manuel

    2014-07-24

    Computer memory that is non-volatile and therefore able to retain its information even when switched off enables computers that do not need to be booted up. One of the technologies for such applications is ferroelectric random access memories, where information is stored as ferroelectric polarization. To miniaturize such devices to the size of a few nanometres, ferroelectric tunnel junctions have seen considerable interest. There, the electric polarization determines the electrical resistance of these thin films, switching the current on and off. With control over other parameters such as magnetism also being possible, ferroelectric tunnel junctions represent a promising and flexible device design.

  19. Polarization-selective vortex-core switching by tailored orthogonal Gaussian-pulse currents

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Young-Sang; Lee, Ki-Suk; Jung, Hyunsung; Choi, Youn-Seok; Yoo, Myoung-Woo; Han, Dong-Soo; Im, Mi-Young; Fischer, Peter; Kim, Sang-Koog

    2011-05-01

    We experimentally demonstrate low-power-consumption vortex-core switching in magnetic nanodisks using tailored rotating magnetic fields produced with orthogonal and unipolar Gaussian-pulse currents. The optimal width of the orthogonal pulses and their time delay are found, from analytical and micromagnetic numerical calculations, to be determined only by the angular eigenfrequency ωD for a given vortex-state disk of polarization p, such that σ=1/ωD and Δt=π/2p/ωD. The estimated optimal pulse parameters are in good agreement with the experimental results. Finally, this work lays a foundation for energy-efficient information recording in vortex-core cross-point architecture.

  20. Asymmetrical edges induced strong current-polarization in embedded graphene nanoribbons

    Science.gov (United States)

    Li, Kuanhong; Zhang, Xiang-Hua

    2018-05-01

    We investigate the electronic structures and transport properties of the embedded zigzag graphene nanoribbon (E-ZGNR) in hexagonal boron nitride trenches, which are achievable in recent experiments. Our first principles results show that the E-ZGNR has a significant enhanced conductivity relative to common ZGNRs due to the existence of asymmetrical edge structures. Moreover, only one spin-orientation electrons possess a widely opened band gap at the magnetic ground state with anti-ferromagnetic configuration, resulting in a full current-polarization at low bias region. Our findings indicate that the state-of-the-art embedding technology is quite useful for tuning the electronic structure of ZGNR and building possible spin injection and spin filter devices in spintronics.

  1. Theory of current-induced spin polarization in an electron gas

    Science.gov (United States)

    Gorini, Cosimo; Maleki Sheikhabadi, Amin; Shen, Ka; Tokatly, Ilya V.; Vignale, Giovanni; Raimondi, Roberto

    2017-05-01

    We derive the Bloch equations for the spin dynamics of a two-dimensional electron gas in the presence of spin-orbit coupling. For the latter we consider both the intrinsic mechanisms of structure inversion asymmetry (Rashba) and bulk inversion asymmetry (Dresselhaus), and the extrinsic ones arising from the scattering from impurities. The derivation is based on the SU(2) gauge-field formulation of the Rashba-Dresselhaus spin-orbit coupling. Our main result is the identification of a spin-generation torque arising from Elliot-Yafet scattering, which opposes a similar term arising from Dyakonov-Perel relaxation. Such a torque, which to the best of our knowledge has gone unnoticed so far, is of basic nature, i.e., should be effective whenever Elliott-Yafet processes are present in a system with intrinsic spin-orbit coupling, irrespective of further specific details. The spin-generation torque contributes to the current-induced spin polarization (CISP), also known as inverse spin-galvanic or Edelstein effect. As a result, the behavior of the CISP turns out to be more complex than one would surmise from consideration of the internal Rashba-Dresselhaus fields alone. In particular, the symmetry of the current-induced spin polarization does not necessarily coincide with that of the internal Rashba-Dresselhaus field, and an out-of-plane component of the CISP is generally predicted, as observed in recent experiments. We also discuss the extension to the three-dimensional electron gas, which may be relevant for the interpretation of experiments in thin films.

  2. Magnetic and electric control of spin- and valley-polarized transport across tunnel junctions on monolayer WSe2

    Science.gov (United States)

    Tahir, M.; Krstajić, P. M.; Vasilopoulos, P.

    2017-06-01

    The recent experimental realization of high-quality WSe2 leads to the possibility of an efficient manipulation of its spin and valley degrees of freedom. Its electronic properties comprise a huge spin-orbit coupling, a direct band gap, and a strong anisotropic lifting of the degeneracy of the valley degree of freedom in a magnetic field. We evaluate its band structure and study ballistic electron transport through single and double junctions (or barriers) on monolayer WSe2 in the presence of spin Ms and valley Mv Zeeman fields and of an electric potential U . The conductance versus the field Ms or Mv decreases in a fluctuating manner. For a single junction, the spin Ps and valley Pv polarizations rise with M =Mv=2 Ms , reach a value of more than 55 % , and become perfect above U ≈45 meV while for a double junction this change can occur for U ≥50 meV and M ≥5 meV. In certain regions of the (M ,U ) plane Pv becomes perfect. The conductance gc, its spin-up and spin-down components, and both polarizations oscillate with the barrier width d . The ability to isolate various carrier degrees of freedom in WSe2 may render it a promising candidate for new spintronic and valleytronic devices.

  3. Polar bodies in assisted reproductive technology: current progress and future perspectives.

    Science.gov (United States)

    Wei, Yanchang; Zhang, Teng; Wang, Ya-Peng; Schatten, Heide; Sun, Qing-Yuan

    2015-01-01

    During meiotic cell-cycle progression, unequal divisions take place, resulting in a large oocyte and two diminutive polar bodies. The first polar body contains a subset of bivalent chromosomes, whereas the second polar body contains a haploid set of chromatids. One unique feature of the female gamete is that the polar bodies can provide beneficial information about the genetic background of the oocyte without potentially destroying it. Therefore, polar body biopsies have been applied in preimplantation genetic diagnosis to detect chromosomal or genetic abnormalities that might be inherited by the offspring. Besides the traditional use in preimplantation diagnosis, recent findings suggest additional important roles for polar bodies in assisted reproductive technology. In this paper, we review the new roles of polar bodies in assisted reproductive technology, mainly focusing on single-cell sequencing of the polar body genome to deduce the genomic information of its sibling oocyte and on polar body transfer to prevent the transmission of mtDNA-associated diseases. We also discuss additional potential roles for polar bodies and related key questions in human reproductive health. We believe that further exploration of new roles for polar bodies will contribute to a better understanding of reproductive health and that polar body manipulation and diagnosis will allow production of a greater number of healthy babies. © 2015 by the Society for the Study of Reproduction, Inc.

  4. Mn concentration and quantum size effects on spin-polarized transport through CdMnTe based magnetic resonant tunneling diode.

    Science.gov (United States)

    Mnasri, S; Abdi-Ben Nasrallahl, S; Sfina, N; Lazzari, J L; Saïd, M

    2012-11-01

    Theoretical studies on spin-dependent transport in magnetic tunneling diodes with giant Zeeman splitting of the valence band are carried out. The studied structure consists of two nonmagnetic layers CdMgTe separated by a diluted magnetic semiconductor barrier CdMnTe, the hole is surrounded by two p-doped CdTe layers. Based on the parabolic valence band effective mass approximation and the transfer matrix method, the magnetization and the current densities for holes with spin-up and spin-down are studied in terms of the Mn concentration, the well and barrier thicknesses as well as the voltage. It is found that, the current densities depend strongly on these parameters and by choosing suitable values; this structure can be a good spin filter. Such behaviors are originated from the enhancement and suppression in the spin-dependent resonant states.

  5. Study of the polar current systems using the IMS meridian chains of magnetometers. Pt. 1. Alaska meridian chain

    Energy Technology Data Exchange (ETDEWEB)

    Akasofu, S.I.; Ahn, B.H.; Romick, G.J. (Alaska Univ., Fairbanks (USA). Geophysical Inst.)

    1983-12-01

    Magnetic field data from a meridian chain of observatories and the recently developed computer codes constitute a powerful tool in studying substorm current systems in the polar region. In this paper, we summarize some of the results obtained from the IMS Alaska meridian chain of observatories. The basic data are the average daily magnetic field variations for 50 successive days (March 9- April 27, 28) which represent a moderately disturbed period. With the aid of the two computer codes, we obtained the distribution of the following quantities in the polar ionosphere in invariant-MLT coordinates: the total ionospheric current; the Pedersen current; the Hall current; the field-aligned currents; the Pedersen-associated field-aligned currents; the Hall-associated field-aligned currents; the electric potential; the Joule heat production rate; the auroral particle energy injection rate; the total energy dissipation rate. All these quantities are related to each other self-consistently at every point under the initial assumptions used in the computation. By using a model of the magnetosphere, the following quantities in the polar ionosphere are projected onto the equatorial plane and the Y-Z plane at X = -20 Rsub(E): the Pedersen current counterpart; the Hall current counterpart; the electric potential; the Pedersen-associated field-aligned currents; the Hall-associated field-aligned currents. These distributions patterns serve as an important basis for studying the generation mechanisms of substorm current systems and the magnetosphere-ionosphere coupling process.

  6. Observation of layered antiferromagnetism in self-assembled parallel NiSi nanowire arrays on Si(110) by spin-polarized scanning tunneling spectromicroscopy

    Science.gov (United States)

    Hong, Ie-Hong; Hsu, Hsin-Zan

    2018-03-01

    The layered antiferromagnetism of parallel nanowire (NW) arrays self-assembled on Si(110) have been observed at room temperature by direct imaging of both the topographies and magnetic domains using spin-polarized scanning tunneling microscopy/spectroscopy (SP-STM/STS). The topographic STM images reveal that the self-assembled unidirectional and parallel NiSi NWs grow into the Si(110) substrate along the [\\bar{1}10] direction (i.e. the endotaxial growth) and exhibit multiple-layer growth. The spatially-resolved SP-STS maps show that these parallel NiSi NWs of different heights produce two opposite magnetic domains, depending on the heights of either even or odd layers in the layer stack of the NiSi NWs. This layer-wise antiferromagnetic structure can be attributed to an antiferromagnetic interlayer exchange coupling between the adjacent layers in the multiple-layer NiSi NW with a B2 (CsCl-type) crystal structure. Such an endotaxial heterostructure of parallel magnetic NiSi NW arrays with a layered antiferromagnetic ordering in Si(110) provides a new and important perspective for the development of novel Si-based spintronic nanodevices.

  7. Thermally induced pure and spin polarized currents in a zigzag silicene nanoribbon based FM/normal/AFM junction

    Science.gov (United States)

    Ghanbari, Atousa; Esmaeilzadeh, Mahdi; Pournaghavi, Nezhat

    2018-01-01

    We study thermally induced spin resolved current in a zigzag silicene nanoribbon when the left and right leads are respectively affected by ferromagnetic (FM) and anti-ferromagnetic (AFM) exchange fields (FM/normal/AFM junction). We show that pure spin current is generated due to the leads temperature difference and the junction can work as a spin Seebeck diode. The pure spin current can be easily controlled by a perpendicular electric field and the junction, in this case, can work as a spin current switch. In addition, we study the effect of a single vacancy and show that the vacancy can slightly destroy the pure spin current property which leads to induce a weak spin polarized current. In the presence of both vacancy and electric field, current with high and tunable spin polarization can be achieved.

  8. Signatures of electron-magnon interaction in charge and spin currents through magnetic tunnel junctions: A nonequilibrium many-body perturbation theory approach

    Science.gov (United States)

    Mahfouzi, Farzad; Nikolić, Branislav K.

    2014-07-01

    We develop a numerically exact scheme for resumming certain classes of Feynman diagrams in the self-consistent perturbative expansion for the electron and magnon self-energies in the nonequilibrium Green function formalism applied to a coupled electron-magnon (e-m) system driven out of equilibrium by the applied finite bias voltage. Our scheme operates with the electronic and magnonic GFs and the corresponding self-energies viewed as matrices in the Keldysh space, rather than conventionally extracting their retarded and lesser components, which greatly simplifies translation of diagrams into compact mathematical expressions and their computational implementation. This is employed to understand the effect of inelastic e-m scattering on charge and spin current vs bias voltage Vb in F/I/F (F-ferromagnet; I-insulating barrier) magnetic tunnel junctions (MTJs), which are modeled on a quasi-one-dimensional (quasi-1D) tight-binding lattice for the electronic subsystem and quasi-1D Heisenberg model for the magnonic subsystem. For this purpose, we evaluate the Fock diagram for the electronic self-energy and the electron-hole polarization bubble diagram for the magnonic self-energy. The respective electronic and magnonic GF lines within these diagrams are the fully interacting ones, thereby requiring to solve the ensuing coupled system of nonlinear integral equations self-consistently. Despite using the quasi-1D model and treating e-m interaction in many-body fashion only within a small active region consisting of few lattice sites around the F/I interface, our analysis captures essential features of the so-called zero-bias anomaly observed [V. Drewello, J. Schmalhorst, A. Thomas, and G. Reiss, Phys. Rev. B 77, 014440 (2008), 10.1103/PhysRevB.77.014440] in both MgO- and AlOx-based realistic 3D MTJs where the second derivative d2I /dVb2 (i.e., inelastic electron tunneling spectrum) of charge current exhibits sharp peaks of opposite sign on either side Vb=0. We show that this

  9. Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

    Science.gov (United States)

    Samanta, Piyas

    2017-09-01

    We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

  10. A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio

    Directory of Open Access Journals (Sweden)

    Saeid Marjani

    2016-09-01

    Full Text Available In this paper, a silicon–on–insulator (SOI p–n–p–n tunneling field–effect transistor (TFET with a silicon doped hafnium oxide (Si:HfO2 ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band–to–band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3 and strontium bismuth tantalate (SrBi2Ta2O9 provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling barrier width. Compared with the conventional p–n–p–n SOI TFET, the on–state current and switching state current ratio are appreciably increased; and the average subthreshold slope (SS is effectively reduced. The simulation results of Si:HfO2 ferroelectric p–n–p–n SOI TFET show significant improvement in transconductance (∼9.8X enhancement at high overdrive voltage and average subthreshold slope (∼35% enhancement over nine decades of drain current at room temperature, indicating that this device is a promising candidate to strengthen the performance of p–n–p–n and conventional TFET for a switching performance.

  11. The influence of preferred orientation and poling temperature on the polarization switching current in PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Zhang, Ping [Tianjin University, School of Electrical and Information Engineering, Tianjin (China); Lan, Kuibo [Tianjin University, School of Microelectronics, Tianjin (China)

    2017-07-15

    In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films with different preferred orientation were prepared on platinized silicon substrates by a modified sol-gel method. Our results indicate that the polarization switching current in PZT thin films is dependent on preferred orientation and poling temperature. In our measurements, (111)-oriented PZT has a larger polarization switching current than randomly oriented PZT, and with the increase of the degree of (111) preferred orientation and the poling temperature, the polarization switching current gradually increase. Considering the contact of PZT thin film with electrodes, the space-charged limited conduction (SCLC) combined with domain switching mechanism may be responsible for such phenomena. By analyzing the conduction data, we found the interface-limited Schottky emission (ES) and bulk-limited Poole-Frenkel hopping (PF) are not suitable for our samples. (orig.)

  12. Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier

    International Nuclear Information System (INIS)

    Yang, Zhichao; Zhang, Yuewei; Nath, Digbijoy N.; Rajan, Siddharth; Khurgin, Jacob B.

    2015-01-01

    We report on Gallium Nitride-based tunneling hot electron transistor amplifier with common-emitter current gain greater than 1. Small signal current gain up to 5 and dc current gain of 1.3 were attained in common-emitter configuration with collector current density in excess of 50 kA/cm 2 . The use of a combination of 1 nm GaN/3 nm AlN layers as an emitter tunneling barrier was found to improve the energy collimation of the injected electrons. These results represent demonstration of unipolar vertical transistors in the III-nitride system that can potentially lead to higher frequency and power microwave devices

  13. Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current.

    Science.gov (United States)

    Shoute, Gem; Afshar, Amir; Muneshwar, Triratna; Cadien, Kenneth; Barlage, Douglas

    2016-02-04

    Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect transistor architecture have not been widely investigated as a result of the lack of available p-type wide-bandgap inorganic semiconductors. Here, we present a wide-bandgap metal-oxide n-type semiconductor that is able to sustain a strong p-type inversion layer using a high-dielectric-constant barrier dielectric when sourced with a heterogeneous p-type material. A demonstration of the utility of the inversion layer was also investigated and utilized as the controlling element in a unique tunnelling junction transistor. The resulting electrical performance of this prototype device exhibited among the highest reported current, power and transconductance densities. Further utilization of the p-type inversion layer is critical to unlocking the previously unexplored capability of metal-oxide thin-film transistors, such applications with next-generation display switches, sensors, radio frequency circuits and power converters.

  14. Polarity Specific Suppression Effects of Transcranial Direct Current Stimulation for Tinnitus

    Directory of Open Access Journals (Sweden)

    Kathleen Joos

    2014-01-01

    Full Text Available Tinnitus is the perception of a sound in the absence of an external auditory stimulus and affects 10–15% of the Western population. Previous studies have demonstrated the therapeutic effect of anodal transcranial direct current stimulation (tDCS over the left auditory cortex on tinnitus loudness, but the effect of this presumed excitatory stimulation contradicts with the underlying pathophysiological model of tinnitus. Therefore, we included 175 patients with chronic tinnitus to study polarity specific effects of a single tDCS session over the auditory cortex (39 anodal, 136 cathodal. To assess the effect of treatment, we used the numeric rating scale for tinnitus loudness and annoyance. Statistical analysis demonstrated a significant main effect for tinnitus loudness and annoyance, but for tinnitus annoyance anodal stimulation has a significantly more pronounced effect than cathodal stimulation. We hypothesize that the suppressive effect of tDCS on tinnitus loudness may be attributed to a disrupting effect of ongoing neural hyperactivity, independent of the inhibitory or excitatory effects and that the reduction of annoyance may be induced by influencing adjacent or functionally connected brain areas involved in the tinnitus related distress network. Further research is required to explain why only anodal stimulation has a suppressive effect on tinnitus annoyance.

  15. Using Transcranial Direct Current Stimulation to Enhance Creative Cognition: Interactions between Task, Polarity, and Stimulation Site

    Directory of Open Access Journals (Sweden)

    Adam B. Weinberger

    2017-05-01

    Full Text Available Creative cognition is frequently described as involving two primary processes, idea generation and idea selection. A growing body of research has used transcranial direct current stimulation (tDCS to examine the neural mechanisms implicated in each of these processes. This literature has yielded a diverse set of findings that vary depending on the location and type (anodal, cathodal, or both of electrical stimulation employed, as well as the task’s reliance on idea generation or idea selection. As a result, understanding the interactions between stimulation site, polarity and task demands is required to evaluate the potential of tDCS to enhance creative performance. Here, we review tDCS designs that have elicited reliable and dissociable enhancements for creative cognition. Cathodal stimulation over the left inferior frontotemporal cortex has been associated with improvements on tasks that rely primarily on idea generation, whereas anodal tDCS over left dorsolateral prefrontal cortex (DLPFC and frontopolar cortex has been shown to augment performance on tasks that impose high demands on creative idea selection. These results highlight the functional selectivity of tDCS for different components of creative thinking and confirm the dissociable contributions of left dorsal and inferior lateral frontotemporal cortex for different creativity tasks. We discuss promising avenues for future research that can advance our understanding of the effectiveness of tDCS as a method to enhance creative cognition.

  16. Susceptibility of CoFeB/AlOx/Co Magnetic Tunnel Junctions to Low-Frequency Alternating Current

    Directory of Open Access Journals (Sweden)

    Yuan-Tsung Chen

    2013-10-01

    Full Text Available This investigation studies CoFeB/AlOx/Co magnetic tunneling junction (MTJ in the magnetic field of a low-frequency alternating current, for various thicknesses of the barrier layer AlOx. The low-frequency alternate-current magnetic susceptibility (χac and phase angle (θ of the CoFeB/AlOx/Co MTJ are determined using an cac analyzer. The driving frequency ranges from 10 to 25,000 Hz. These multilayered MTJs are deposited on a silicon substrate using a DC and RF magnetron sputtering system. Barrier layer thicknesses are 22, 26, and 30 Å. The X-ray diffraction patterns (XRD include a main peak at 2θ = 44.7° from hexagonal close-packed (HCP Co with a highly (0002 textured structure, with AlOx and CoFeB as amorphous phases. The full width at half maximum (FWHM of the Co(0002 peak, decreases as the AlOx thickness increases; revealing that the Co layer becomes more crystalline with increasing thickness. χac result demonstrates that the optimal resonance frequency (fres that maximizes the χac value is 500 Hz. As the frequency increases to 1000 Hz, the susceptibility decreases rapidly. However, when the frequency increases over 1000 Hz, the susceptibility sharply declines, and almost closes to zero. The experimental results reveal that the mean optimal susceptibility is 1.87 at an AlOx barrier layer thickness of 30 Å because the Co(0002 texture induces magneto-anisotropy, which improves the indirect CoFeB and Co spin exchange-coupling strength and the χac value. The results concerning magnetism indicate that the magnetic characteristics are related to the crystallinity of Co.

  17. Mapping geological structures in bedrock via large-scale direct current resistivity and time-domain induced polarization tomography

    DEFF Research Database (Denmark)

    Rossi, Matteo; Olsson, Per-Ivar; Johansson, Sara

    2017-01-01

    An investigation of geological conditions is always a key point for planning infrastructure constructions. Bedrock surface and rock quality must be estimated carefully in the designing process of infrastructures. A large direct-current resistivity and time-domain induced-polarization survey has b...... been performed in Dalby, Lund Municipality, southern Sweden, with the aim of mapping lithological variations in bedrock. The geology at the site is characterised by Precambrian granitic gneisses and amphibolites, which are intensely deformed, fractured, and partly weathered. In addition......-polarization profiles. The direct-current resistivity and time-domain induced-polarization methodology proved to be a suitable technique for extensively mapping weathered zones with poor geotechnical characteristics and tectonic structures, which can lead to severe problems for infrastructure construction and....../or constitute risk zones for aquifer contamination....

  18. The Current State of Nanoparticle-Induced Macrophage Polarization and Reprogramming Research

    Directory of Open Access Journals (Sweden)

    Xiaoyuan Miao

    2017-02-01

    Full Text Available Macrophages are vital regulators of the host defense in organisms. In response to different local microenvironments, resting macrophages (M0 can be polarized into different phenotypes, pro-inflammatory (M1 or anti-inflammatory (M2, and perform different roles in different physiological or pathological conditions. Polarized macrophages can also be further reprogrammed by reversing their phenotype according to the changed milieu. Macrophage polarization and reprogramming play essential roles in maintaining the steady state of the immune system and are involved in the processes of many diseases. As foreign substances, nanoparticles (NPs mainly target macrophages after entering the body. NPs can perturb the polarization and reprogramming of macrophages, affect their immunological function and, therefore, affect the pathological process of disease. Optimally-designed NPs for the modulation of macrophage polarization and reprogramming might provide new solutions for treating diseases. Systematically investigating how NPs affect macrophage polarization is crucial for understanding the regulatory effects of NPs on immune cells in vivo. In this review, macrophage polarization by NPs is summarized and discussed.

  19. Search for the existence of circulating currents in high-Tc superconductors using the polarized neutron scattering technique

    International Nuclear Information System (INIS)

    Sidis, Y.; Fauque, B.; Aji, V.; Bourges, P.

    2007-01-01

    We review experimental attempts using polarized neutron scattering technique to reveal the existence in high temperature superconductors of a long-range ordered state characterized by the spontaneous appearance of current loops. We draw particular attention to our recent results (B. Fauque et al., Phys. Rev. Lett. 96 (2006) 197001) that, up to now, can be explained only by the theory of circulating currents proposed by Varma

  20. Determination of the polarity of carrier traps in γ-irradiated polyethylene by temperature gradient thermally stimulated current

    International Nuclear Information System (INIS)

    Kato, Keizo; Iwamoto, Mitsumasa; Hino, Taro

    1986-01-01

    Theoretical analysis is made to show that the polarity of carrier traps produced by radiation can be determined based on measurements of temperature gradient thremally stimulated current. Observations are also made on γ-irradiated polyethylene to examine the polarity of carrier traps. Another investigation is conducted to determine whether a space-charge field is generated in the γ-irradiated polyethylene. In the apparatus used, a collecting voltage is applied to a γ-irradiated specimen to heat it under a temperature gradient while the current generated in an enternal circuit is measured. Theoretical examination, conducted concerning this temperature gradient thermally stimulated current, shows that polarity determination is possible under some conditions. Then, observation is actually carried out using γ-irradiated low-density polyethylene films with deposited gold electrodes. Characteristics of initial rise in thermally stimulated current and effects of the collecting voltage are examined. The polyethylene investigated shows a maximum in thermally stimulated current at about 80 deg C, which is found to have relations with electron traps. It is also revealed that space-charge field is not generated in the sample examined. (Nogami, K.)

  1. Interplay between switching driven by the tunneling current andatomic force of a bistable four-atom Si quantum dot

    Czech Academy of Sciences Publication Activity Database

    Yamazaki, S.; Maeda, K.; Sugimoto, Y.; Abe, M.; Zobač, Vladimír; Pou, P.; Rodrigo, L.; Mutombo, Pingo; Perez, R.; Jelínek, Pavel; Morita, S.

    2015-01-01

    Roč. 15, č. 7 (2015), 4356-4363 ISSN 1530-6984 R&D Projects: GA ČR(CZ) GA14-02079S Institutional support: RVO:68378271 Keywords : atomic manipulation * atomic switch * Si quantum dot * scanning tunneling microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 13.779, year: 2015

  2. Simulation of the tunnelling transport in ferromagnetic GaAs/ZnO heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Comesana, E; Aldegunde, M; Garcia-Loureiro, A J [Department de Electronica e Computacion, Universidade de Santiago de Compostela, 15782 Spain (Spain); Gehring, G A, E-mail: enrique.comesana@usc.e [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom)

    2010-07-01

    In this work we have implemented a numerical simulator and analytical model to study the dependence of the tunnelling current on the polarization ratio of the carrier spin for a degenerate and ferromagnetic heterojunction. We have applied these models to study the behaviour of a magnetically doped GaAs/ZnO PN junction and the current transport in a PN heterojunction where the polarization of the spin of the charge carriers is also a control variable.

  3. The importance of Fe surface states for spintronic devices based on magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Chantis, Athanasios N [Los Alamos National Laboratory

    2008-01-01

    In this article we give a review of our recent theoretical studies of the influence of Fe(001) surface (interface) states on spin-polarized electron transport across magnetic tunnel junctions with Fe electrodes. We show that minority-spin surface (interface) states are responsible for at least two effects which are important for spin electronics. First, they can produce a sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, tunneling magnetoresistance junctions with a single ferromagnetic electrode. Second, in Fe/GaAs(001) magnetic tunnel junctions minority-spin interface states produce a strong dependence of the tunneling current spin polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is predicted. This explains the observed sign reversal of spin polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistance through vertical Fe/GaAs/Fe trilayers.

  4. Period-doubling bifurcation cascade observed in a ferromagnetic nanoparticle under the action of a spin-polarized current

    Energy Technology Data Exchange (ETDEWEB)

    Horley, Paul P., E-mail: paul.horley@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico); Kushnir, Mykola Ya. [Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., 58012 Chernivtsi (Ukraine); Morales-Meza, Mishel [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico); Sukhov, Alexander [Institut für Physik, Martin-Luther Universität Halle-Wittenberg, 06120 Halle (Saale) (Germany); Rusyn, Volodymyr [Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., 58012 Chernivtsi (Ukraine)

    2016-04-01

    We report on complex magnetization dynamics in a forced spin valve oscillator subjected to a varying magnetic field and a constant spin-polarized current. The transition from periodic to chaotic magnetic motion was illustrated with bifurcation diagrams and Hausdorff dimension – the methods developed for dissipative self-organizing systems. It was shown that bifurcation cascades can be obtained either by tuning the injected spin-polarized current or by changing the magnitude of applied magnetic field. The order–chaos transition in magnetization dynamics can be also directly observed from the hysteresis curves. The resulting complex oscillations are useful for development of spin-valve devices operating in harmonic and chaotic modes.

  5. Giant thermal spin-torque-assisted magnetic tunnel junction switching.

    Science.gov (United States)

    Pushp, Aakash; Phung, Timothy; Rettner, Charles; Hughes, Brian P; Yang, See-Hun; Parkin, Stuart S P

    2015-05-26

    Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe.

  6. Probing electronic interactions using electron tunneling

    Indian Academy of Sciences (India)

    pratap

    The scanning tunneling microscope: Principle d. eI. Tunneling Current. Topography by tracking current: Constant height mode. Tracking the height: Constant current mode. NbSe. 2 single crystal. (Grown by P. Shirage and A. Thamizhavel) ...

  7. Features of the effect of the parameters of resonance systems with different configurations on the current-voltage characteristics of resonant-tunneling nanostructures in a subterahertz frequency range

    International Nuclear Information System (INIS)

    Aleksanyan, A.A.; Volchkov, N.A.; Dravin, V.A.; Kazakov, I.P.; Karuzskij, A.L.; Murzin, V.N.; Perestoronin, A.V.; Tskhovrebov, A.M.; Shmelev, S.S.

    2014-01-01

    Features of the effect of a subterahertz microwave field on the current characteristics of a resonant-tunneling diode in resonance systems with different configurations have been studied. Changes in the current characteristics of the resonant-tunneling diode under variation of the electrophysical parameters of dielectric and microstrip resonators, in particular high-Q-factor superconducting microstrip resonators, have been experimentally studied and analyzed [ru

  8. Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy.

    Science.gov (United States)

    Lytvyn, Petro M; Kuchuk, Andrian V; Mazur, Yuriy I; Li, Chen; Ware, Morgan E; Wang, Zhiming M; Kladko, Vasyl P; Belyaev, Alexander E; Salamo, Gregory J

    2018-02-21

    We experimentally demonstrate that the conductivity of graded Al x Ga 1-x N increases as a function of the magnitude of the Al concentration gradient (%Al/nm) due to polarization doping effects, without the use of impurity dopants. Using three up/down-graded Al x Ga 1-x N nanolayers with Al gradients ranging from ∼0.16 to ∼0.28%Al/nm combined in one structure, the effects of polarization engineering for localized electric fields and current transport were investigated. Cross-sectional Kelvin probe force microscopy and conductive atomic force microscopy were used to directly probe the electrical properties of the films with spatial resolution along the thickness of the growth. The experimental profiles of the built-in electric fields and the spreading current found in the graded layers are shown to be consistent with simulations of the field distribution as well as of the electron and hole densities. Finally, it was directly observed that for gradients less than 0.28%Al/nm the native n-type donors still limit polarization-induced hole doping, making p-type conductivity still a challenge due to background impurities and defects.

  9. Modelling of electrochemical reactors with bio polar electrodes. Prediction of the current distributions

    International Nuclear Information System (INIS)

    HenquIn, E. R; Bisang, J. M

    2005-01-01

    A simplified mathematical model to calculate the current distributions in bipolar electrochemical reactors is proposed.The current distributions are deduced from a combination of the voltage balance in the reactor with a voltage balance including the electrolyte inlet and outlet.Thus, equations to predict the effect of geometric and operational variables on the current distributions at the electrodes are reported.The parameters acting upon the current distributions were lumped into two dimensionless variables and their effects on the current distributions are discussed.The primary current distributions are obtained as a limiting case.Comparisons between calculated and experimental primary current distributions are reported

  10. Effect of quantum noise and tunneling on the fluctuational voltage-current characteristics and the lifetime of the zero-voltage state in Josephson junctions

    International Nuclear Information System (INIS)

    Mel'nikov, V.I.; Suetoe, A.

    1986-01-01

    The minima of the potential energy for the dynamical variable phi of a Josephson junction are separated by barriers of height hI/sub c//e, where I/sub c/ is the critical current. At low temperatures, T hΩ/2π (Ω is the Josephson plasma frequency). We consider this problem for high-quality junctions (RCΩ>>1, R and C are the resistance and the capacitance of the junction), accounting for the effect of a Johnson-Nyquist noise and quantum tunneling at the barrier top. With a simplifying assumption, we derive a pair of integral equations containing an energy variable for the steady-state distribution of phi and phi-dot, and solve it by a modification of the Wiener-Hopf method. The result is a formula for the current dependence of the fluctuational voltage, valid for currents I 2 <<1

  11. Ultrafast scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Botkin, D.A. [California Univ., Berkeley, CA (United States). Dept. of Physics]|[Lawrence Berkeley Lab., CA (United States)

    1995-09-01

    I have developed an ultrafast scanning tunneling microscope (USTM) based on uniting stroboscopic methods of ultrafast optics and scanned probe microscopy to obtain nanometer spatial resolution and sub-picosecond temporal resolution. USTM increases the achievable time resolution of a STM by more than 6 orders of magnitude; this should enable exploration of mesoscopic and nanometer size systems on time scales corresponding to the period or decay of fundamental excitations. USTM consists of a photoconductive switch with subpicosecond response time in series with the tip of a STM. An optical pulse from a modelocked laser activates the switch to create a gate for the tunneling current, while a second laser pulse on the sample initiates a dynamic process which affects the tunneling current. By sending a large sequence of identical pulse pairs and measuring the average tunnel current as a function of the relative time delay between the pulses in each pair, one can map the time evolution of the surface process. USTM was used to measure the broadband response of the STM`s atomic size tunnel barrier in frequencies from tens to hundreds of GHz. The USTM signal amplitude decays linearly with the tunnel junction conductance, so the spatial resolution of the time-resolved signal is comparable to that of a conventional STM. Geometrical capacitance of the junction does not appear to play an important role in the measurement, but a capacitive effect intimately related to tunneling contributes to the measured signals and may limit the ultimate resolution of the USTM.

  12. Current sheets with inhomogeneous plasma temperature: Effects of polarization electric field and 2D solutions

    International Nuclear Information System (INIS)

    Catapano, F.; Zimbardo, G.; Artemyev, A. V.; Vasko, I. Y.

    2015-01-01

    We develop current sheet models which allow to regulate the level of plasma temperature and density inhomogeneities across the sheet. These models generalize the classical Harris model via including two current-carrying plasma populations with different temperature and the background plasma not contributing to the current density. The parameters of these plasma populations allow regulating contributions of plasma density and temperature to the pressure balance. A brief comparison with spacecraft observations demonstrates the model applicability for describing the Earth magnetotail current sheet. We also develop a two dimensional (2D) generalization of the proposed model. The interesting effect found for 2D models is the nonmonotonous profile (along the current sheet) of the magnetic field component perpendicular to the current sheet. Possible applications of the model are discussed

  13. Direct current (DC) resistivity and induced polarization (IP) monitoring of active layer dynamics at high temporal resolution

    DEFF Research Database (Denmark)

    Doetsch, Joseph; Ingeman-Nielsen, Thomas; Christiansen, Anders V.

    2015-01-01

    With permafrost thawing and changes in active layer dynamics induced by climate change, interactions between biogeochemical and thermal processes in the ground are of great importance. Here, active layer dynamics have been monitored using direct current (DC) resistivity and induced polarization (IP...... and subsurface temperatures supplemented the DC-IP measurements. A time-lapse DC-IP monitoring system has been acquiring at least six datasets per day on a 42-electrode profile with 0.5. m electrode spacing since July 2013. Remote control of the data acquisition system enables interactive adaptation...

  14. 3-D time-domain induced polarization tomography: a new approach based on a source current density formulation

    Science.gov (United States)

    Soueid Ahmed, A.; Revil, A.

    2018-04-01

    Induced polarization (IP) of porous rocks can be associated with a secondary source current density, which is proportional to both the intrinsic chargeability and the primary (applied) current density. This gives the possibility of reformulating the time domain induced polarization (TDIP) problem as a time-dependent self-potential-type problem. This new approach implies a change of strategy regarding data acquisition and inversion, allowing major time savings for both. For inverting TDIP data, we first retrieve the electrical resistivity distribution. Then, we use this electrical resistivity distribution to reconstruct the primary current density during the injection/retrieval of the (primary) current between the current electrodes A and B. The time-lapse secondary source current density distribution is determined given the primary source current density and a distribution of chargeability (forward modelling step). The inverse problem is linear between the secondary voltages (measured at all the electrodes) and the computed secondary source current density. A kernel matrix relating the secondary observed voltages data to the source current density model is computed once (using the electrical conductivity distribution), and then used throughout the inversion process. This recovered source current density model is in turn used to estimate the time-dependent chargeability (normalized voltages) in each cell of the domain of interest. Assuming a Cole-Cole model for simplicity, we can reconstruct the 3-D distributions of the relaxation time τ and the Cole-Cole exponent c by fitting the intrinsic chargeability decay curve to a Cole-Cole relaxation model for each cell. Two simple cases are studied in details to explain this new approach. In the first case, we estimate the Cole-Cole parameters as well as the source current density field from a synthetic TDIP data set. Our approach is successfully able to reveal the presence of the anomaly and to invert its Cole

  15. Sunlight effects on the 3D polar current system determined from low Earth orbit measurements

    DEFF Research Database (Denmark)

    Laundal, Karl M.; Finlay, Chris; Olsen, Nils

    2016-01-01

    analyzed together. In this paper, we present estimates of the average global Birkeland currents and horizontal ionospheric currents from the same set of magnetic field measurements. The magnetic field measurements, from the low Earth orbiting Swarm and CHAMP satellites, are used to co-estimate poloidal...

  16. Electroluminescence from single nanowires by tunnel injection: an experimental study

    OpenAIRE

    Zimmler, Mariano A.; Bao, Jiming; Shalish, Ilan; Yi, Wei; Yoon, Joonah; Narayanamurti, Venkatesh; Capasso, Federico

    2007-01-01

    We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel-injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the stan...

  17. Tunneling features in semiconductor nanostructures

    Science.gov (United States)

    Arseev, P. I.; Mantsevich, V. N.; Maslova, N. S.; Panov, V. I.

    2017-11-01

    The most telling scanning tunneling microscopy/spectroscopy (STM/STS) data available on the influence of nonequilibrium tunneling effects and electronic spectra reconstruction are reviewed and theoretically explained by self-consistently accounting for nonequilibrium electron distribution and the change (due to the tunneling current) in the electron density of states near the tunneling junction. The paper discusses the basic ideas of the self-consistent tunneling theory, which forms the basis for experimental research and which allows many effects observed in STM/STS experiments to be explained and new phenomena to be predicted.

  18. Polar mesosphere summer echoes (PMSE: Review of observations and current understanding

    Directory of Open Access Journals (Sweden)

    M. Rapp

    2004-01-01

    Full Text Available Polar mesosphere summer echoes (PMSE are very strong radar echoes primarily studied in the VHF wavelength range from altitudes close to the polar summer mesopause. Radar waves are scattered at irregularities in the radar refractive index which at mesopause altitudes is effectively determined by the electron number density. For efficient scatter, the electron number density must reveal structures at the radar half wavelength (Bragg condition for monostatic radars; ~3 m for typical VHF radars. The question how such small scale electron number density structures are created in the mesopause region has been a longstanding open scientific question for almost 30 years. This paper reviews experimental and theoretical milestones on the way to an advanced understanding of PMSE. Based on new experimental results from in situ observations with sounding rockets, ground based observations with radars and lidars, numerical simulations with microphysical models of the life cycle of mesospheric aerosol particles, and theoretical considerations regarding the diffusivity of electrons in the ice loaded complex plasma of the mesopause region, a consistent explanation for the generation of these radar echoes has been developed. The main idea is that mesospheric neutral air turbulence in combination with a significantly reduced electron diffusivity due to the presence of heavy charged ice aerosol particles (radii ~5–50 nm leads to the creation of structures at spatial scales significantly smaller than the inner scale of the neutral gas turbulent velocity field itself. Importantly, owing to their very low diffusivity, the plasma structures acquire a very long lifetime, i.e., 10 min to hours in the presence of particles with radii between 10 and 50 nm. This leads to a temporal decoupling of active neutral air turbulence and the existence of small scale plasma structures and PMSE and thus readily explains observations proving the absence of neutral air turbulence at

  19. Instantaneous current and field structure of a gun-driven spheromak for two gun polarities

    Science.gov (United States)

    Woodruff, S.; Nagata, M.

    2002-12-01

    The instantaneous plasma structure of the SPHEX spheromak is determined here by numerically processing data from insertable Rogowski and magnetic field probes. Data is presented and compared for two modes of gun operation: with the central electrode biased positively and negatively. It is found that while the mean-, or even instantaneous-, field structure would give the impression of a roughly axisymmetric spheromak, the instantaneous current structure does not. Hundred per cent variations in J measured at the magnetic axis can be explained by the rotation of a current filament that has a width equal to half of the radius of the flux-conserving first wall. In positive gun operation, current leaves the filament in the confinement region leading to high wall current there. In negative gun operation, wall current remains low as all injected current returns to the gun through the plasma. The plasma, in either instance, is strongly asymmetric. We discuss evidence for the existence of the current filament in other gun-driven spheromaks and coaxial plasma thrusters.

  20. Spin-polarized supercurrents for spintronics: a review of current progress.

    Science.gov (United States)

    Eschrig, Matthias

    2015-10-01

    During the past 15 years a new field has emerged, which combines superconductivity and spintronics, with the goal to pave a way for new types of devices for applications combining the virtues of both by offering the possibility of long-range spin-polarized supercurrents. Such supercurrents constitute a fruitful basis for the study of fundamental physics as they combine macroscopic quantum coherence with microscopic exchange interactions, spin selectivity, and spin transport. This report follows recent developments in the controlled creation of long-range equal-spin triplet supercurrents in ferromagnets and its contribution to spintronics. The mutual proximity-induced modification of order in superconductor-ferromagnet hybrid structures introduces in a natural way such evasive phenomena as triplet superconductivity, odd-frequency pairing, Fulde-Ferrell-Larkin-Ovchinnikov pairing, long-range equal-spin supercurrents, [Formula: see text]-Josephson junctions, as well as long-range magnetic proximity effects. All these effects were rather exotic before 2000, when improvements in nanofabrication and materials control allowed for a new quality of hybrid structures. Guided by pioneering theoretical studies, experimental progress evolved rapidly, and since 2010 triplet supercurrents are routinely produced and observed. We have entered a new stage of studying new phases of matter previously out of our reach, and of merging the hitherto disparate fields of superconductivity and spintronics to a new research direction: super-spintronics.

  1. Transport Through a Precessing Spin Coupled to Noncollinearly Polarized Ferromagnetic Leads

    International Nuclear Information System (INIS)

    Wang Xianchao; Xin Zihua; Feng Liya

    2010-01-01

    The quantum electronic transport through a precessing magnetic spin coupled to noncollinearly polarized ferromagnetic leads (F-MS-F) has been studied in this paper. The nonequilibrium Green function approach is used to calculate local density of states (LDOS) and current in the presence of external bias. The characters of LDOS and the electronic current are obtained. The tunneling current is investigated for different precessing angle and different configurations of the magnetization of the leads. The investigation reveals that when the precessing angle takes θ < π/2 and negative bias is applied, the resonant tunneling current appears, otherwise, it appears when positive bias is applied. When the leads are totally polarized and the precessing angel takes 0, the tunneling current changes with the configuration of two leads; and it becomes zero when the two leads are antiparallel. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. Tunneling progress on the Yucca Mountain Project

    International Nuclear Information System (INIS)

    Hansmire, W.H.; Munzer, R.J.

    1996-01-01

    The current status of tunneling progress on the Yucca Mountain Project (YMP) is presented in this paper. The Exploratory Studies Facility (ESF), a key part of the YMP, has been long in development and construction is ongoing. This is a progress report on the tunneling aspects of the ESF as of January 1, 1996. For purposes of discussion in this summary, the tunneling has progressed in four general phases. The paper describes: tunneling in jointed rock under low stress; tunneling through the Bow Ridge Fault and soft rock; tunneling through the Imbricate Fault Zone; and Tunneling into the candidate repository formation

  3. Spin heat accumulation induced by tunneling from a ferromagnet.

    Science.gov (United States)

    Vera-Marun, I J; van Wees, B J; Jansen, R

    2014-02-07

    An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the coexisting electrical spin accumulation and can give a different Hanle spin precession signature. The effect is governed by the spin polarization of the Peltier coefficient of the tunnel contact, its Seebeck coefficient, and the spin heat resistance of the nonmagnetic material, which is related to the electrical spin resistance by a spin-Wiedemann-Franz law. Moreover, spin heat injection is subject to a heat conductivity mismatch that is overcome if the tunnel interface has a sufficiently large resistance.

  4. A model of the plasma flow and current in Saturn's polar ionosphere under conditions of strong Dungey cycle driving

    Directory of Open Access Journals (Sweden)

    C. M. Jackman

    2006-05-01

    Full Text Available We propose a simple model of the flow and currents in Saturn's polar ionosphere. This model is motivated by theoretical reasoning, and guided quantitatively by in situ field and flow data from space missions, ground-based IR Doppler measurements, and Hubble Space Telescope images. The flow pattern consists of components which represent (1 plasma sub-corotation in the middle magnetosphere region resulting from plasma pick-up and radial transport from internal sources; (2 the Vasyliunas-cycle of internal plasma mass-loss down the magnetospheric tail at higher latitudes; and (3 the polar Dungey-cycle flow driven by the solar wind interaction. Upstream measurements of the interplanetary magnetic field (IMF indicate the occurrence of both extended low-field rarefaction intervals with essentially negligible Dungey-cycle flow, and few-day high-field compression regions in which the Dungey-cycle voltage peaks at a few hundred kV. Here we model the latter conditions when the Dungey-cycle is active, advancing on previous axi-symmetric models which may be more directly applicable to quiet conditions. For theoretical convenience the overall flow pattern is constructed by adding together two components - a purely rotational flow similar to previous axi-symmetric models, and a sun-aligned twin vortex representing the dawn-dusk asymmetry effects associated with the Vasyliunas-and Dungey-cycle flows. We calculate the horizontal ionospheric current associated with the flow and the field-aligned current from its divergence. These calculations show that a sheet of upward-directed field-aligned current flows at the boundary of open field lines which is strongly modulated in local-time by the Dungey-cycle flows. We then consider implications of the field-aligned current for magnetospheric electron acceleration and aurorae using two plasma source populations (hot outer magnetospheric electrons and cool dense magnetosheath electrons. Both sources display a strong dawn

  5. Direct electric current modifies important cellular aspects and ultrastructure features of Candida albicans yeasts: Influence of doses and polarities.

    Science.gov (United States)

    Barbosa, Gleyce Moreno; Dos Santos, Eldio Gonçalves; Capella, Francielle Neves Carvalho; Homsani, Fortune; de Pointis Marçal, Carina; Dos Santos Valle, Roberta; de Araújo Abi-Chacra, Érika; Braga-Silva, Lys Adriana; de Oliveira Sales, Marcelo Henrique; da Silva Neto, Inácio Domingos; da Veiga, Venicio Feo; Dos Santos, André Luis Souza; Holandino, Carla

    2017-02-01

    Available treatments against human fungal pathogens present high levels of resistance, motivating the development of new antifungal therapies. In this context, the present work aimed to analyze direct electric current (DC) antifungal action, using an in vitro apparatus equipped with platinum electrodes. Candida albicans yeast cells were submitted to three distinct conditions of DC treatment (anodic flow-AF; electroionic flow-EIF; and cathodic flow-CF), as well as different charges, ranging from 0.03 to 2.40 C. Our results indicated C. albicans presented distinct sensibility depending on the DC intensity and polarity applied. Both the colony-forming unit assay and the cytometry flow with propidium iodide indicated a drastic reduction on cellular viability after AF treatment with 0.15 C, while CF- and EIF-treated cells stayed alive when DC doses were increased up to 2.40 C. Additionally, transmission electron microscopy revealed important ultrastructural alterations in AF-treated yeasts, including cell structure disorganization, ruptures in plasmatic membrane, and cytoplasmic rarefaction. This work emphasizes the importance of physical parameters (polarity and doses) in cellular damage, and brings new evidence for using electrotherapy to treat C. albicans pathology process. Bioelectromagnetics. 38:95-108, 2017. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

  6. Polarity-specific cortical effects of transcranial direct current stimulation in primary somatosensory cortex of healthy humans

    Directory of Open Access Journals (Sweden)

    Robert eRehmann

    2016-05-01

    Full Text Available Transcranial direct current stimulation (tDCS is a noninvasive stimulation method that has been shown to modulate the excitability of the motor and visual cortices in human subjects in a polarity dependent manner in previous studies. The aim of our study was to investigate whether anodal and cathodal tDCS can also be used to modulate the excitability of the human primary somatosensory cortex (S1. We measured paired-pulse suppression (PPS of somatosensory evoked potentials in 36 right-handed volunteers before and after anodal, cathodal or sham stimulation over the right non-dominant S1. Paired-pulse stimulation of the median nerve was performed at the dominant and non-dominant hand. After anodal tDCS, PPS was reduced in the ipsilateral S1 compared to sham stimulation, indicating an excitatory effect of anodal tDCS. In contrast, PPS in the stimulated left hemisphere was increased after cathodal tDCS, indicating an inhibitory effect of cathodal tDCS. Sham stimulation induced no pre-post differences. Thus, tDCS can be used to modulate the excitability of S1 in polarity-dependent manner, which can be assessed by paired-pulse suppression. An interesting topic for further studies could be the investigation of direct correlations between sensory changes and excitability changes induced by tDCS.

  7. Migrational polarization in high-current density molten salt electrochemical devices

    Energy Technology Data Exchange (ETDEWEB)

    Braunstein, J.; Vallet, C.E.

    1977-01-01

    Electrochemical flux equations based on the thermodynamics of irreversible processes have been derived in terms of experimental transport coefficients for binary molten salt mixtures analogous to those proposed for high temperature batteries and fuel cells. The equations and some numerical solutions indicate steady state composition gradients of significant magnitude. The effects of migrational separation must be considered along with other melt properties in the characterization of electrode behavior, melt composition, operating temperatures and differences of phase stability, wettability and other physicochemical properties at positive and negative electrodes of high current density devices with mixed electrolytes.

  8. Fast Low-Current Spin-Orbit-Torque Switching of Magnetic Tunnel Junctions through Atomic Modifications of the Free-Layer Interfaces

    Science.gov (United States)

    Shi, Shengjie; Ou, Yongxi; Aradhya, S. V.; Ralph, D. C.; Buhrman, R. A.

    2018-01-01

    Future applications of spin-orbit torque will require new mechanisms to improve the efficiency of switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast nanosecond-scale performance with low-write-error rates. Here, we demonstrate a strategy to simultaneously enhance the interfacial magnetic anisotropy energy and suppress interfacial spin-memory loss by introducing subatomic and monatomic layers of Hf at the top and bottom interfaces of the ferromagnetic free layer of an in-plane magnetized three-terminal MTJ device. When combined with a β -W spin Hall channel that generates spin-orbit torque, the cumulative effect is a switching current density of 5.4 ×106 A /cm2 .

  9. Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length

    Science.gov (United States)

    Tomioka, Katsuhiro; Fukui, Takashi

    2014-02-01

    We report on a fabrication of tunnel field-effect transistors using InGaAs nanowire/Si heterojunctions and the characterization of scaling of channel lengths. The devices consisted of single InGaAs nanowires with a diameter of 30 nm grown on p-type Si(111) substrates. The switch demonstrated steep subthreshold-slope (30 mV/decade) at drain-source voltage (VDS) of 0.10 V. Also, pinch-off behavior appeared at moderately low VDS, below 0.10 V. Reducing the channel length of the transistors attained a steep subthreshold slope (<60 mV/decade) and enhanced the drain current, which was 100 higher than that of the longer channels.

  10. Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field

    Directory of Open Access Journals (Sweden)

    N. Ohshima

    2017-05-01

    Full Text Available We study current-induced magnetization switching properties of a magnetic tunnel junction with junction diameter of 19 nm and resistance-area product of 6 Ωμm2 in the nanosecond regime with and without in-plane magnetic field. At zero field, for both parallel (P-to-anti-parallel (AP and AP-to-P switchings, the probability of switching PSW approaches unity with the increase of pulse voltage duration τP. However, under in-plane magnetic field, PSW for P-to-AP switching starts to saturate at a value lower than unity with increasing τP, while AP-to-P switching remains the same as in the absence of in-plane magnetic field. This in-plane field dependence of PSW can be partially explained by the influence of electric-field modulation of magnetic anisotropy.

  11. Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field

    Science.gov (United States)

    Ohshima, N.; Sato, H.; Kanai, S.; Llandro, J.; Fukami, S.; Matsukura, F.; Ohno, H.

    2017-05-01

    We study current-induced magnetization switching properties of a magnetic tunnel junction with junction diameter of 19 nm and resistance-area product of 6 Ω μ m2 in the nanosecond regime with and without in-plane magnetic field. At zero field, for both parallel (P)-to-anti-parallel (AP) and AP-to-P switchings, the probability of switching PSW approaches unity with the increase of pulse voltage duration τP. However, under in-plane magnetic field, PSW for P-to-AP switching starts to saturate at a value lower than unity with increasing τP, while AP-to-P switching remains the same as in the absence of in-plane magnetic field. This in-plane field dependence of PSW can be partially explained by the influence of electric-field modulation of magnetic anisotropy.

  12. Measuring fire size in tunnels

    International Nuclear Information System (INIS)

    Guo, Xiaoping; Zhang, Qihui

    2013-01-01

    A new measure of fire size Q′ has been introduced in longitudinally ventilated tunnel as the ratio of flame height to the height of tunnel. The analysis in this article has shown that Q′ controls both the critical velocity and the maximum ceiling temperature in the tunnel. Before the fire flame reaches tunnel ceiling (Q′ 1.0), Fr approaches a constant value. This is also a well-known phenomenon in large tunnel fires. Tunnel ceiling temperature shows the opposite trend. Before the fire flame reaches the ceiling, it increases very slowly with the fire size. Once the flame has hit the ceiling of tunnel, temperature rises rapidly with Q′. The good agreement between the current prediction and three different sets of experimental data has demonstrated that the theory has correctly modelled the relation among the heat release rate of fire, ventilation flow and the height of tunnel. From design point of view, the theoretical maximum of critical velocity for a given tunnel can help to prevent oversized ventilation system. -- Highlights: • Fire sizing is an important safety measure in tunnel design. • New measure of fire size a function of HRR of fire, tunnel height and ventilation. • The measure can identify large and small fires. • The characteristics of different fire are consistent with observation in real fires

  13. Direct current (DC) resistivity and Induced Polarization (IP) monitoring of active layer dynamics at high temporal resolution

    DEFF Research Database (Denmark)

    Doetsch, J.; Fiandaca, G.; Ingeman-Nielsen, Thomas

    2015-01-01

    With permafrost thawing and changes in active layer dynamics induced by climate change, interactions between biogeochemical and thermal processes in the ground are of great importance. Here, active layer dynamics have been monitored using direct current (DC) resistivity and induced polarization (...... non-intrusively and reliably image freezing patterns and their lateral variation on a 10-100 m scale that is difficult to sample by point measurements.......) measurements at high temporal resolution at a heath tundra site on Disko Island on the west coast of Greenland (69°N). Borehole sediment characteristics and subsurface temperatures supplemented the DC-IP measurements. Data acquired during the freezing period of October 2013 – February 2014 clearly image...... the soil freezing as a strong increase in resistivity. While the freezing horizon generally moves deeper with time, some variations in the freezing depth are observed along the profile. Comparison with depth-specific soil temperature indicates an exponential relationship between resistivity and below-freezing...

  14. Polarity-Specific Transcranial Direct Current Stimulation Disrupts Auditory Pitch Learning

    Directory of Open Access Journals (Sweden)

    Reiko eMatsushita

    2015-05-01

    Full Text Available Transcranial direct current stimulation (tDCS is attracting increasing interest because of its potential for therapeutic use. While its effects have been investigated mainly with motor and visual tasks, less is known in the auditory domain. Past tDCS studies with auditory tasks demonstrated various behavioural outcomes, possibly due to differences in stimulation parameters or task measurements used in each study. Further research using well-validated tasks are therefore required for clarification of behavioural effects of tDCS on the auditory system. Here, we took advantage of findings from a prior functional magnetic resonance imaging study, which demonstrated that the right auditory cortex is modulated during fine-grained pitch learning of microtonal melodic patterns. Targeting the right auditory cortex with tDCS using this same task thus allowed us to test the hypothesis that this region is causally involved in pitch learning. Participants in the current study were trained for three days while we measured pitch discrimination thresholds using microtonal melodies on each day using a psychophysical staircase procedure. We administered anodal, cathodal, or sham tDCS to three groups of participants over the right auditory cortex on the second day of training during performance of the task. Both the sham and the cathodal groups showed the expected significant learning effect (decreased pitch threshold over the three days of training; in contrast we observed a blocking effect of anodal tDCS on auditory pitch learning, such that this group showed no significant change in thresholds over the three days. The results support a causal role for the right auditory cortex in pitch discrimination learning.

  15. Functional characterisation of letter-specific responses in time, space and current polarity using magnetoencephalography.

    Science.gov (United States)

    Gwilliams, L; Lewis, G A; Marantz, A

    2016-05-15

    Recent neurophysiological evidence suggests that a hierarchical neural network of low-to-high level processing subserves written language comprehension. While a considerable amount of research has identified distinct regions and stages of processing, the relations between them and to this hierarchical model remain unclear. Magnetoencephalography (MEG) is a technique frequently employed in such investigations; however, no studies have sought to test whether the conventional method of reconstructing currents at the source of the magnetic field is best suited for such across-subject designs. The present study details the results of three MEG experiments addressing these issues. Neuronal populations supporting responses to low-level orthographic properties were housed posteriorly near the primary visual cortex. More anterior regions along the fusiform gyrus encoded higher-level processes and became active ~80ms later. A functional localiser of these early letter-specific responses was developed for the production of functional regions of interest in future studies. Previously established response components were successfully grouped based on proximity to the localiser, which characterised location, latency and functional sensitivity. Unconventional anatomically constrained signed minimum norm estimates of MEG data were most sensitive to the primary experimental manipulation, suggesting that the conventional unsigned unconstrained method is sub-optimal for studying written word processing. Copyright © 2016 The Authors. Published by Elsevier Inc. All rights reserved.

  16. Identifications of the polar cap boundary and the auroral belt in the high-altitude magnetosphere: a model for field-aligned currents

    International Nuclear Information System (INIS)

    Sugiura, M.

    1975-01-01

    By means of the Ogo 5 Goddard Space Flight Center fluxgate magnetometer data the polar cap boundary is identified in the high-altitude magnetosphere by a sudden transition from a dipolar field to a more taillike configuration. It is inferred that there exists a field-aligned-current layer at the polar cap boundary. In the night side magnetosphere the polar cap boundary is identified as the high-latitude boundary of the plasma sheet. The field-aligned current flows downward to the ionosphere on the morning side of the magnetosphere and upward from the ionosphere on the afternoon side. The basic pattern of the magnetic field variations observed during the satellite's traversal of the auroral belt is presented. Currents flow in opposite directions in the two field-aligned-current layers. The current directions in these layers as observed by Ogo 5 in the high-altitude magnetosphere are the same as those observed at low altitudes by the polar-orbiting Triad satellite (Armstrong and Zmuda, 1973). The magnetic field in the region where the lower-latitude field-aligned-current layer is situated is essentially meridional. A model is presented in which two field-aligned-current systems, one at the polar cap boundary and the other on the low-latitude part of the auroral belt, are main []y connected by ionospheric currents flowing across the auroral belt. The existence of field-aligned currents deduced from the Ogo 5 observations is a permanent feature of the magnetosphere. Intensifications of the field-aligned currents and occurrences of multiple pairs of field-aligned-current layers characterize the disturbed conditions of these regions

  17. Transport électronique dans les jonctions tunnel magnétiques à double barrière

    OpenAIRE

    Clément, Pierre-Yves

    2014-01-01

    Since a few years, magnetic memories have been extensively studied in order to compete with already existing Random Access Memories such as DRAM. In this context, double barrier magnetic tunnel junctions may have significant assets in terms of reading speed and electrical consumption. In fact, we demonstrated that spin transfer torque is enhanced when polarizers magnetizations are antiparallel, thus yielding a decrease of the writing current. On the contrary, when polarizers are parallel, spi...

  18. A Measurement of the Effective Electron Neutral Current Coupling Parameters from Polarized Bhabha Scattering at the Z0 Resonance

    Energy Technology Data Exchange (ETDEWEB)

    Langston, Matthew D

    2003-07-15

    The effective electron neutral current coupling parameters, {bar g}{sub V}{sup 3} and {bar g}{sub A}{sup c}, have been measured from analyzing 43,222 polarized Bhabha scattered events (e{sup +}e{sup -} {yields} e{sup +}e{sup -}) using the SLAC Large Detector (SLD) experiment at the Stanford Linear Accelerator Center (SLAC). The SLAC Linear Collider (SLC) produced the Bhabha scattered events by colliding polarized electrons, with an average polarization of 74%, with unpolarized positrons at an average center-of-mass energy of 91.25 GeV. The analysis used the entire SLD data sample collected between 1994 and 1998 (the last year the SLD detector collected data). The results are {bar g}{sub V}{sup e} = -0.0469 {+-} 0.0024 (stat.) {+-} 0.0004 (sys.); {bar g}{sub A}{sup e} = -0.5038 {+-} 0.0010 (stat.) {+-} 0.0043 (sys.). All Bhabha scattered events within the angular acceptance of the SLD calorimeter subsystems were used in this analysis, including both small-angle events (28 mrad. {le} theta {le} 68 mrad.) measured by the Silicon/Tungsten Luminosity Monitor (LUM), and large angle events (0 {le} |cos{theta}| {le} 0.9655) measured by the Liquid Argon Calorimeter (LAC). Using all of the data in this manner allows for the high-precision measurement of the luminosity provided by the LUM to constrain the uncertainty on {bar g}{sub V}{sup e} and {bar g}{sub A}{sup e}. The measured integrated luminosity for the combined 1993 through 1998 SLD data sample is L{sub Integrated} = 19,247 {+-} 17 (stat.) {+-} 146 (sys.) nb{sup -1}. In contrast with other SLD precision measurements of the effective weak mixing angle, which are sensitive to the ratio {bar g}{sub V}{sup e}/{bar g}{sub A}{sup e}, this result independently determines {bar g}{sub V}{sup 3} and {bar g}{sub A}{sup c}. The analysis techniques to measure {bar g}{sub V}{sup 3} and {bar g}{sub A}{sup c} are described, and the results are compared with other SLD measurements as well as other experiments.

  19. Spin- and energy-dependent tunneling through a single molecule with intramolecular spatial resolution.

    Science.gov (United States)

    Brede, Jens; Atodiresei, Nicolae; Kuck, Stefan; Lazić, Predrag; Caciuc, Vasile; Morikawa, Yoshitada; Hoffmann, Germar; Blügel, Stefan; Wiesendanger, Roland

    2010-07-23

    We investigate the spin- and energy-dependent tunneling through a single organic molecule (CoPc) adsorbed on a ferromagnetic Fe thin film, spatially resolved by low-temperature spin-polarized scanning tunneling microscopy. Interestingly, the metal ion as well as the organic ligand show a significant spin dependence of tunneling current flow. State-of-the-art ab initio calculations including also van der Waals interactions reveal a strong hybridization of molecular orbitals and substrate 3d states. The molecule is anionic due to a transfer of one electron, resulting in a nonmagnetic (S=0) state. Nevertheless, tunneling through the molecule exhibits a pronounced spin dependence due to spin-split molecule-surface hybrid states.

  20. Electrical detection of magnetic skyrmions by tunnelling non-collinear magnetoresistance

    Science.gov (United States)

    Hanneken, Christian; Otte, Fabian; Kubetzka, André; Dupé, Bertrand; Romming, Niklas; von Bergmann, Kirsten; Wiesendanger, Roland; Heinze, Stefan

    2015-12-01

    Magnetic skyrmions are localized non-collinear spin textures with a high potential for future spintronic applications. Skyrmion phases have been discovered in a number of materials and a focus of current research is to prepare, detect and manipulate individual skyrmions for implementation in devices. The local experimental characterization of skyrmions has been performed by, for example, Lorentz microscopy or atomic-scale tunnel magnetoresistance measurements using spin-polarized scanning tunnelling microscopy. Here we report a drastic change of the differential tunnel conductance for magnetic skyrmions that arises from their non-collinearity: mixing between the spin channels locally alters the electronic structure, which makes a skyrmion electronically distinct from its ferromagnetic environment. We propose this tunnelling non-collinear magnetoresistance as a reliable all-electrical detection scheme for skyrmions with an easy implementation into device architectures.

  1. Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator

    International Nuclear Information System (INIS)

    Roy, Urmimala; Dey, Rik; Pramanik, Tanmoy; Ghosh, Bahniman; Register, Leonard F.; Banerjee, Sanjay K.

    2015-01-01

    We consider a thermally stable, metallic nanoscale ferromagnet (FM) subject to spin-polarized current injection and exchange coupling from the spin-helically locked surface states of a topological insulator (TI) to evaluate possible non-volatile memory applications. We consider parallel transport in the TI and the metallic FM, and focus on the efficiency of magnetization switching as a function of transport between the TI and the FM. Transport is modeled as diffusive in the TI beneath the FM, consistent with the mobility in the TI at room temperature, and in the FM, which essentially serves as a constant potential region albeit spin-dependent except in the low conductivity, diffusive limit. Thus, it can be captured by drift-diffusion simulation, which allows for ready interpretation of the results. We calculate switching time and energy consumed per write operation using self-consistent transport, spin-transfer-torque (STT), and magnetization dynamics calculations. Calculated switching energies and times compare favorably to conventional spin-torque memory schemes for substantial interlayer conductivity. Nevertheless, we find that shunting of current from the TI to a metallic nanomagnet can substantially limit efficiency. Exacerbating the problem, STT from the TI effectively increases the TI resistivity. We show that for optimum performance, the sheet resistivity of the FM layer should be comparable to or larger than that of the TI surface layer. Thus, the effective conductivity of the FM layer becomes a critical design consideration for TI-based non-volatile memory

  2. Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve.

    Science.gov (United States)

    Ma, Jing-Min; Zhao, Jia; Zhang, Kai-Cheng; Peng, Ya-Jing; Chi, Feng

    2011-03-28

    Spin-dependent transport through a quantum-dot (QD) ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR) as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively.PACS numbers:

  3. Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve

    Directory of Open Access Journals (Sweden)

    Ma Jing-Min

    2011-01-01

    Full Text Available Abstract Spin-dependent transport through a quantum-dot (QD ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively. PACS numbers:

  4. Electron spin injection from a regrown Fe layer in a spin-polarized vertical-cavity surface-emitting laser

    Science.gov (United States)

    Holub, M.; Bhattacharya, P.; Shin, J.; Saha, D.

    2007-04-01

    An electroluminescence circular polarization of 23% and threshold current reduction of 11% are obtained in an electrically pumped spin-polarized vertical-cavity surface-emitting laser. Electron spin injection is accomplished utilizing a regrown Fe/ n-AlGaAs Schottky tunnel barrier deposited around the base of the laser mesas. Negligible circular polarizations and threshold current reductions are measured for nonmagnetic and Fe-based control VCSELs, which provides convincing evidence of spin injection, transport, and detection in our spin-polarized laser.

  5. Subauroral polarization stream on the outer boundary of the ring current during an energetic ion injection event

    Science.gov (United States)

    Yuan, Zhigang; Qiao, Zheng; Li, Haimeng; Huang, Shiyong; Wang, Dedong; Yu, Xiongdong; Yu, Tao

    2017-04-01

    Subauroral polarization stream (SAPS) electric field can play an important role in the coupling between the inner magnetosphere and ionosphere; however, the production mechanism of SAPS has not been yet solved. During an energetic ion injection event on 26 March 2004, at latitudes lower than the equatorward boundaries of precipitating plasma sheet electrons and ions, the Defense Meteorological Satellite Program (DMSP) F13 satellite simultaneously observed a strong SAPS with the peak velocity of 1294 m/s and downward flowing field-aligned currents (FACs). Conjugate observations of DMSP F13 and NOAA 15 satellites have shown that FACs flowing into the ionosphere just lie in the outer boundary of the ring current (RC). The downward flowing FACs were observed in a region of positive latitudinal gradients of the ion energy density, implying that the downward flowing FACs are more likely linked to the azimuthal gradient than the radial gradient of the RC ion pressure. Our result demonstrates that RC ion pressure gradients on the outer boundary of the RC in the evening sector during energetic ion injection events can lead to downward flowing FACs so as to cause strong SAPS in condition of low ionospheric conductivities.Plain Language SummaryThis paper provides a good case that the SAPS and FAC occurred in the outer boundary of the ring current during an energetic ion injection event. Our result demonstrates that RC ion pressure gradients on the outer boundary of the RC in the evening sector during energetic ion injection events can lead to downward flowing FACs so as to cause strong SAPS in condition of low ionospheric conductivities.

  6. Transient charging and discharging of spin-polarized electrons in a quantum dot

    DEFF Research Database (Denmark)

    De Souza, Fabricio; Leao, S.A.; Gester, R. M.

    2007-01-01

    We study spin-polarized transient transport in a quantum dot coupled to two ferromagnetic leads subjected to a rectangular bias voltage pulse. Time-dependent spin-resolved currents, occupations, spin accumulation, and tunneling magnetoresistance TMR are calculated using both nonequilibrium Green...

  7. Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics

    OpenAIRE

    Chin-Sheng Pang; Jenn-Gwo Hwu

    2014-01-01

    In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S), Al/HfO2/SiO2/Si (H), and Al/3HfO2/SiO2/Si (3H) were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V) measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO2 dielectric layer,...

  8. Study of semileptonic and leptonic neutral-current processes and of $\\mu$-polarization using counter techniques

    CERN Multimedia

    2002-01-01

    .PP This experiment will study semileptonic neutral current neutrino interactions with nucleons, using principally the dichromatic neutrino beam N1 and will make measurements of the polarization of muons produced in the WA1 experiment by neutrino-nucleon interactions, using the horn-focused broad-band neutrino The main part of the apparatus is a fine-grained target calorimeter in which the energy and direction of the hadronic jet resulting from the neutrino scattering is measured by electronic techniques. It is supplemented by a muon detector and spectrometer. The fine-grained calorimeter is used as a polarimeter for muons produced in WA1. \\\\ \\\\ The calorimeter is composed of 13 modules, each 1.2 m long and 4~m x 4~m in cross section. A module consists of six 3 m x 3 m target plates made of 8 cm thick marble with 12 cm gaps for insertion of 20 scintillation counters of 15 cm width and 3 cm thickness, 128 proportional counters of 3~x~3~cm|2 cross-section and 4~m length, and 256 streamer tubes of 0.9~x~0.9~cm|2...

  9. Design and performance of an ultra-high vacuum spin-polarized scanning tunneling microscope operating at 30 mK and in a vector magnetic field

    Science.gov (United States)

    von Allwörden, Henning; Eich, Andreas; Knol, Elze J.; Hermenau, Jan; Sonntag, Andreas; Gerritsen, Jan W.; Wegner, Daniel; Khajetoorians, Alexander A.

    2018-03-01

    We describe the design and performance of a scanning tunneling microscope (STM) that operates at a base temperature of 30 mK in a vector magnetic field. The cryogenics is based on an ultra-high vacuum (UHV) top-loading wet dilution refrigerator that contains a vector magnet allowing for fields up to 9 T perpendicular and 4 T parallel to the sample. The STM is placed in a multi-chamber UHV system, which allows in situ preparation and exchange of samples and tips. The entire system rests on a 150-ton concrete block suspended by pneumatic isolators, which is housed in an acoustically isolated and electromagnetically shielded laboratory optimized for extremely low noise scanning probe measurements. We demonstrate the overall performance by illustrating atomic resolution and quasiparticle interference imaging and detail the vibrational noise of both the laboratory and microscope. We also determine the electron temperature via measurement of the superconducting gap of Re(0001) and illustrate magnetic field-dependent measurements of the spin excitations of individual Fe atoms on Pt(111). Finally, we demonstrate spin resolution by imaging the magnetic structure of the Fe double layer on W(110).

  10. Polar conic current sheets as sources and channels of energetic particles in the high-latitude heliosphere

    Science.gov (United States)

    Khabarova, Olga; Malova, Helmi; Kislov, Roman; Zelenyi, Lev; Obridko, Vladimir; Kharshiladze, Alexander; Tokumaru, Munetoshi; Sokół, Justyna; Grzedzielski, Stan; Fujiki, Ken'ichi; Malandraki, Olga

    2017-04-01

    The existence of a large-scale magnetically separated conic region inside the polar coronal hole has been predicted by the Fisk-Parker hybrid heliospheric magnetic field model in the modification of Burger and co-workers (Burger et al., ApJ, 2008). Recently, long-lived conic (or cylindrical) current sheets (CCSs) have been found from Ulysses observations at high heliolatitudes (Khabarova et al., ApJ, 2017). The characteristic scale of these structures is several times lesser than the typical width of coronal holes, and the CCSs can be observed at 2-3 AU for several months. CCS crossings in 1994 and 2007 are characterized by sharp decreases in the solar wind speed and plasma beta typical for predicted profiles of CCSs. In 2007, a CCS was detected directly over the South Pole and strongly highlighted by the interaction with comet McNaught. The finding is confirmed by restorations of solar coronal magnetic field lines that reveal the occurrence of conic-like magnetic separators over the solar poles both in 1994 and 2007. Interplanetary scintillation data analysis also confirms the existence of long-lived low-speed regions surrounded by the typical polar high-speed solar wind in solar minima. The occurrence of long-lived CCSs in the high-latitude solar wind could shed light on how energetic particles reach high latitudes. Energetic particle enhancements up to tens MeV were observed by Ulysses at edges of CCSs both in 1994 and 2007. In 1994 this effect was clearer, probably due to technical reasons. Accelerated particles could be produced either by magnetic reconnection at the edges of a CCS in the solar corona or in the solar wind. We discuss the role of high-latitude CCSs in propagation of energetic particles in the heliosphere and revisit previous studies of energetic particle enhancements at high heliolatitudes. We also suggest that the existence of a CCS can modify the distribution of the solar wind as a function of heliolatitude and consequently impact ionization

  11. Tunnel magnetoresistance in double spin filter junctions

    International Nuclear Information System (INIS)

    Saffarzadeh, Alireza

    2003-01-01

    We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

  12. Direct observation of hopping induced spin polarization current in oxygen deficient Co-doped ZnO by Andreev reflection technique

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Kung-Shang; Huang, Tzu-Yu; Dwivedi, G.D. [Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan (China); Lin, Lu-Kuei; Lee, Shang-Fan [Taiwan Institute of Physics, Academia Sinica, Taipei, Taiwan (China); Sun, Shih-Jye [Department of Applied Physics, National Kaohsiung University, Kaohsiung, Taiwan (China); Chou, Hsiung, E-mail: hchou@mail.nsysu.edu.tw [Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan (China)

    2017-07-01

    Highlights: • Co-doped ZnO thin-films were grown with varying V{sub O} concentartion. • PCAR measurements were done to study the SPC. • High spin polarization was observed above a certain V{sub O} concentartion. • High V{sub O} samples provide a high density of completed percolation path. • This complete percolation path gives rise to high SPC. - Abstract: Oxygen vacancy induced ferromagnetic coupling in diluted magnetic oxide (DMO) semiconductors have been reported in several studies, but technologically more crucial spin-polarized current (SPC) is still under-developed in DMOs. Few studies have claimed that VRH mechanism can originate the SPC, but, how VRH mechanism associated with percolation path, is not clearly understood. We used Point-contact Andreev reflection (PCAR) technique to probe the SPC in Co-doped ZnO (CZO) films. Since the high resistance samples cause broadening in conductance(G)-voltage(V) curves, which may result in an unreliable evaluation of spin polarization, we include two extra parameters, (i) effective temperature and (ii) spreading resistance, for the simulation to avoid the uncertainty in extracting spin polarization. The effective G-V curves and higher spin polarization can be obtained above a certain oxygen vacancy concentration. The number of completed and fragmentary percolation paths is proportional to the concentration of oxygen vacancies. For low oxygen vacancy samples, the Pb-tip has a higher probability of covering fragmentary percolation paths than the complete ones, due to its small contact size. The completed paths may remain independent of one another and get polarized in different directions, resulting in lower spin-polarization value. High oxygen vacancy samples provide a high density of completed path, most of them link to one another by crossing over, and gives rise to high spin-polarization value.

  13. Spin-polarized current and shot noise in the presence of spin flip in a quantum dot via nonequilibrium Green's functions

    DEFF Research Database (Denmark)

    De Souza, Fabricio; Jauho, Antti-Pekka; Egues, J.C.

    2008-01-01

    Using nonequilibrium Green's functions we calculate the spin-polarized current and shot noise in a ferromagnet-quantum-dot-ferromagnet system. Both parallel (P) and antiparallel (AP) magnetic configurations are considered. Coulomb interaction and coherent spin flip (similar to a transverse magnet...

  14. Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface.

    Science.gov (United States)

    Burton, J D; Tsymbal, E Y

    2011-04-15

    A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La(1-x)Sr(x)MnO3 electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of La(1-x)Sr(x)MnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic-scale spin valve by filtering spin-dependent current. This produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.

  15. Voltage-controlled spin selection in a magnetic resonant tunneling diode.

    Science.gov (United States)

    Slobodskyy, A; Gould, C; Slobodskyy, T; Becker, C R; Schmidt, G; Molenkamp, L W

    2003-06-20

    We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

  16. Polarization holography

    DEFF Research Database (Denmark)

    Nikolova, L.; Ramanujam, P.S.

    Current research into holography is concerned with applications in optically storing, retrieving, and processing information. Polarization holography has many unique properties compared to conventional holography. It gives results in high efficiency, achromaticity, and special polarization...... properties. This books reviews the research carried out in this field over the last 15 years. The authors provide basic concepts in polarization and the propagation of light through anisotropic materials, before presenting a sound theoretical basis for polarization holography. The fabrication...... and characterization of azobenzene based materials, which remain the most efficient for the purpose, is described in detail. This is followed by a description of other materials that are used in polarization holography. An in-depth description of various applications, including display holography and optical storage...

  17. First Principles Study of Electron Tunneling through Ice

    KAUST Repository

    Cucinotta, Clotilde S.

    2012-10-25

    With the aim of understanding electrochemical scanning tunnel microscopy experiments in an aqueous environment, we investigate electron transport through ice in the coherent limit. This is done by using the nonequilibrium Greens functions method, implemented within density functional theory, in the self-interaction corrected local density approximation. In particular, we explore different ice structures and different Au electrode surface orientations. By comparing the decay coefficient for different thicknesses to the ice complex band structure, we find that the electron transport occurs via tunneling with almost one-dimensional character. The slow decay of the current with the ice thickness is largely due to the small effective mass of the conduction electrons. Furthermore, we find that the calculated tunneling decay coefficients at the Fermi energy are not sensitive to the structural details of the junctions and are at the upper end of the experimental range for liquid water. This suggests that linear response transport measurements are not capable of distinguishing between different ordered ice structures. However, we also demonstrate that a finite bias measurement may be capable of sorting polar from nonpolar interfaces due to the asymmetry of the current-voltage curves for polar interfaces. © 2012 American Chemical Society.

  18. Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs

    KAUST Repository

    Mughal, Asad J.

    2017-11-27

    Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal–organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p–n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm−3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10−3–3.4 × 10−3 Ωcenterdotcm2, and the turn-on voltages of the diodes.

  19. Fiber coupled ultrafast scanning tunneling microscope

    DEFF Research Database (Denmark)

    Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1997-01-01

    We report on a scanning tunneling microscope with a photoconductive gate in the tunneling current circuit. The tunneling tip is attached to a coplanar transmission line with an integrated photoconductive switch. The switch is illuminated through a fiber which is rigidly attached to the switch...... waveguide. The measurements show that the probe works as a transient voltage detector in contact and a capacitively coupled transient field detector in tunneling mode. We do not measure the transient voltage change in the ohmic tunneling current. In this sense, the spatial resolution for propagating...

  20. Seepage into PEP tunnel

    International Nuclear Information System (INIS)

    Weidner, H.

    1990-01-01

    The current rate of seepage into the PEP tunnel in the vicinity of IR-10 is very low compared to previous years. Adequate means of handling this low flow are in place. It is not clear whether the reduction in the flow is temporary, perhaps due to three consecutive dry years, or permanent due to drainage of a perched water table. During PEP construction a large amount of effort was expended in attempts to seal the tunnel, with no immediate effect. The efforts to ''manage'' the water flow are deemed to be successful. By covering equipment to protect it from dripping water and channeling seepage into the drainage gutters, the seepage has been reduced to a tolerable nuisance. There is no sure, safe procedure for sealing a leaky shotcreted tunnel

  1. Single Electron Tunneling

    International Nuclear Information System (INIS)

    Ruggiero, Steven T.

    2005-01-01

    Financial support for this project has led to advances in the science of single-electron phenomena. Our group reported the first observation of the so-called ''Coulomb Staircase'', which was produced by tunneling into ultra-small metal particles. This work showed well-defined tunneling voltage steps of width e/C and height e/RC, demonstrating tunneling quantized on the single-electron level. This work was published in a now well-cited Physical Review Letter. Single-electron physics is now a major sub-field of condensed-matter physics, and fundamental work in the area continues to be conducted by tunneling in ultra-small metal particles. In addition, there are now single-electron transistors that add a controlling gate to modulate the charge on ultra-small photolithographically defined capacitive elements. Single-electron transistors are now at the heart of at least one experimental quantum-computer element, and single-electron transistor pumps may soon be used to define fundamental quantities such as the farad (capacitance) and the ampere (current). Novel computer technology based on single-electron quantum dots is also being developed. In related work, our group played the leading role in the explanation of experimental results observed during the initial phases of tunneling experiments with the high-temperature superconductors. When so-called ''multiple-gap'' tunneling was reported, the phenomenon was correctly identified by our group as single-electron tunneling in small grains in the material. The main focus throughout this project has been to explore single electron phenomena both in traditional tunneling formats of the type metal/insulator/particles/insulator/metal and using scanning tunneling microscopy to probe few-particle systems. This has been done under varying conditions of temperature, applied magnetic field, and with different materials systems. These have included metals, semi-metals, and superconductors. Amongst a number of results, we have

  2. Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

    OpenAIRE

    Saffarzadeh, Alireza; Daqiq, Reza

    2009-01-01

    We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to t...

  3. NMR dispersion measurement of dynamic nuclear polarization

    International Nuclear Information System (INIS)

    Davies, K.; Cox, S.F.J.

    1978-01-01

    The feasibility of monitoring dynamic nuclear polarization from the NMR dispersive susceptibility is examined. Two prototype instruments are tested in a polarized proton target using organic target material. The more promising employs a tunnel diode oscillator, inside the target cavity, and should provide a precise polarization measurement working at a frequency far enough from the main resonance for the disturbance of the measured polarization to be negligible. Other existing methods for measuring target polarization are briefly reviewed. (author)

  4. Large tunneling magnetoresistance in octahedral Fe3O4 nanoparticles

    Directory of Open Access Journals (Sweden)

    Arijit Mitra

    2016-05-01

    Full Text Available We have observed large tunneling Magnetoresistance (TMR in amine functionalized octahedral nanoparticle assemblies. Amine monolayer on the surface of nanoparticles acts as an insulating barrier between the semimetal Fe3O4 nanoparticles and provides multiple tunnel junctions where inter-granular tunneling is plausible. The tunneling magnetoresistance recorded at room temperature is 38% which increases to 69% at 180 K. When the temperature drops below 150 K, coulomb staircase is observed in the current versus voltage characteristics as the charging energy exceeds the thermal energy. A similar study is also carried out with spherical nanoparticles. A 24% TMR is recorded at room temperature which increases to 41% at 180 K for spherical particles. Mössbauer spectra reveal better stoichiometry for octahedral particles which is attainable due to lesser surface disorder and strong amine coupling at the facets of octahedral Fe3O4 nanoparticles. Less stoichiometric defect in octahedral nanoparticles leads to a higher value of spin polarization and therefore larger TMR in octahedral nanoparticles.

  5. Assessment of the effectiveness of interferential current therapy and TENS in the management of carpal tunnel syndrome: a randomized controlled study.

    Science.gov (United States)

    Koca, Irfan; Boyaci, Ahmet; Tutoglu, Ahmet; Ucar, Mehmet; Kocaturk, Ozcan

    2014-12-01

    We assessed the effectiveness of interferential current (IFC) and transcutaneous electrical nerve stimulation (TENS) therapies in the management of carpal tunnel syndrome (CTS) compared with splint therapy, a standard treatment modality for CTS. This was a prospective, single-blinded, single-center, randomized, three-group parallel intervention study of 3 weeks duration. Efficacy was examined in the third week after the end of treatments. Subjects were assigned randomly to one of three groups: group I patients received splint therapy, group II patients received TENS applied on the palmar surface of the hand and the carpal tunnel, and group III patients underwent IFC therapy applied on the palmar surface of the hand and the volar surface of the forearm. TENS and ICF treatments were applied five times weekly for a total of 15 sessions. Group 1 patients were stabilized with volar wrist splints for 3 weeks. The efficacy of the therapies was assessed before initiation of therapy and at 3 weeks after completion of therapy using a visual analog scale (VAS), a symptom severity scale, the functional capacity scale of the BCTQ, and measurement of median nerve motor distal latency (mMDL) and median sensory nerve conduction velocity (mSNCV). Groups were compared pairwise using the Mann-Whitney U test to identify the source of differences between groups. The Wilcoxon test was used to analyze changes in variables over time within a group. In the VAS, BCTQ, MDL, and mSNCV, no significant difference was observed between the groups (p > 0.05). In the VAS, BCTQ, and mSNCV, statistically significant improvements were detected in all groups (p < 0.05). There was no statistically significant difference between TENS and splint therapy with respect to improvement in clinical scores, whereas IFC therapy provided a significantly greater improvement in VAS, mMDL, and mSNCV values than splint therapy (VAS: 4.80 ± 1.18 and 6.37 ± 1.18; p = 0.001, mMDL: 3.89 ± 0.88 and 4.06 ± 0.61; p = 0

  6. Electroluminescence from single nanowires by tunnel injection: an experimental study

    Science.gov (United States)

    Zimmler, Mariano A.; Bao, Jiming; Shalish, Ilan; Yi, Wei; Yoon, Joonah; Narayanamurti, Venkatesh; Capasso, Federico

    2007-06-01

    We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.

  7. Spin dynamics in tunneling decay of a metastable state

    OpenAIRE

    Ban, Yue; Sherman, E. Ya.

    2012-01-01

    We analyze spin dynamics in the tunneling decay of a metastable localized state in the presence of spin-orbit coupling. We find that the spin polarization at short time scales is affected by the initial state while at long time scales both the probability- and the spin density exhibit diffraction-in-time phenomenon. We find that in addition to the tunneling time the tunneling in general can be characterized by a new parameter, the tunneling length. Although the tunneling length is independent...

  8. An epitaxial ferroelectric tunnel junction on silicon.

    Science.gov (United States)

    Li, Zhipeng; Guo, Xiao; Lu, Hui-Bin; Zhang, Zaoli; Song, Dongsheng; Cheng, Shaobo; Bosman, Michel; Zhu, Jing; Dong, Zhili; Zhu, Weiguang

    2014-11-12

    Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Giant thermal spin-torque–assisted magnetic tunnel junction switching

    Science.gov (United States)

    Pushp, Aakash; Phung, Timothy; Rettner, Charles; Hughes, Brian P.; Yang, See-Hun; Parkin, Stuart S. P.

    2015-01-01

    Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe. PMID:25971730

  10. Stray current vs anodic polarization in reinforced mortar: a comparative study on steel corrosion behaviour in both regimes

    NARCIS (Netherlands)

    Chen, Zhipei; Koleva, D.A.; van Breugel, K.

    2015-01-01

    Stray current arising from direct current electrified traction systems and then circulat-ing in reinforced concrete structures may initiate corrosion or even accelerate existing corrosion processes on embedded reinforcement. Therefore, stray-current induced corrosion of nearby reinforced concrete

  11. Effects of polar field-aligned currents on the distribution of the electric field and current in the middle and low latitudes ionosphere

    International Nuclear Information System (INIS)

    Maekawa, Koichiro

    1978-01-01

    According to the analysis of the magnetic records from the Triad satellite, it has been found that there are two regions of the field-aligned current of magnetospheric origin along the auroral oval; Region 1 in higher latitude and Region 2 in lower latitude. These currents seem to have important effect on the distribution of electric field and current in the ionosphere, in addition to the Sq electric field and current of ionospheric origin. The global current systems generated by the field-aligned current were calculated, using some simplified ionospheric models. The effect of the field-aligned current on the distribution of electric field and current of the ionosphere at middle and low latitudes was investigated. (Yoshimori, M.)

  12. Spin-dependent scattering and the spin polarization of a diffusive current in partly disordered L10 epitaxial FePd

    International Nuclear Information System (INIS)

    Seemann, K M; Hickey, M C; Baltz, V; Hickey, B J; Marrows, C H

    2010-01-01

    We report magnetic domain wall (DW) resistance in epitaxial films of FePd. When equal numbers of Fe and Pd atoms are present, this material forms an ordered structure with alternating crystal planes of Fe and Pd. We prepared films enriched with Pd to varying degrees, gradually degrading this structure. As might be expected, this increased the electrical resistivity of the films by introducing extra defects that can scatter electrons. However, unexpectedly, the additional resistance arising from the ∼10 nm thick DWs rose as a proportion of the overall resistivity, roughly doubling when halving the degree of chemical ordering-as determined from x-ray diffraction measurements-within the films. These data can be used to infer a rise in the spin polarization of the current flowing in the layers when extra Pd atoms are introduced. On the other hand, a separate measurement of spin polarization using a superconducting point contact technique that is insensitive to electron scattering revealed no changes as extra Pd was introduced. We conclude that Pd atoms scatter electrons of one spin far more strongly than the other, suggesting a possible means of producing highly spin-polarized currents for use in spintronic devices.

  13. Electrical characterization of polymer matrix — TiO2 filler composites through isothermal polarization / depolarization currents and I-V tests

    Science.gov (United States)

    Stavrakas, Ilias; Triantis, Dimos; Hloupis, George; Moutzouris, Konstantinos

    2014-04-01

    Specimens of polymer matrix — ceramic TiO2 filler composites were prepared. The contribution of the filler content on the electrical conductivity and energy storage properties of the samples was examined. I-V and Isothermal Polarization/Depolarization Current (IPC/IDC) measurements were conducted. Dc conductivity values directly calculated from the I-V curves exhibited excellent agreement with corresponding values derived from the IPC/IDC recordings. Standard models were employed for fitting the IPC/IDC data. In specific, the short and the very long depolarization times were fitted by use of power laws of different slopes, while the intermediate depolarization times were fitted as a sum of three exponential decays. The present study reveals a strong dependence of the depolarization and polarization processes, as well as of the dc conductivity, on the filler concentration.

  14. Measurement of neutral current deep inelastic e{sup +}p scattering cross sections with longitudinally polarized positrons with ZEUS at HERA

    Energy Technology Data Exchange (ETDEWEB)

    Wlasenko, Michal

    2009-05-15

    Measurements of neutral current deep inelastic scattering of protons colliding with longitudinally polarized positrons, performed with data recorded in years 2006 and 2007 with the ZEUS detector, corresponding to an integrated luminosity of L=113.3 pb{sup -1}, are presented. The single-differential cross sections d{sigma}/dQ{sup 2}, d{sigma}/dx, d{sigma}/dy and the double-differential reduced cross section {sigma} were measured in the kinematic region of 185polarization asymmetry A{sup +} and the generalized structure function x F{sub 3} were extracted. All measurements agree well with the predictions of the Standard Model. (orig.)

  15. A review on all-perovskite multiferroic tunnel junctions

    Directory of Open Access Journals (Sweden)

    Yuewei Yin

    2017-12-01

    Full Text Available Although the basic concept was proposed only about 10 years ago, multiferroic tunnel junctions (MFTJs with a ferroelectric barrier sandwiched between two ferromagnetic electrodes have already drawn considerable interests, driven mainly by its potential applications in multi-level memories and electric field controlled spintronics. The purpose of this article is to review the recent progress of all-perovskite MFTJs. Starting from the key functional properties of the tunneling magnetoresistance, tunneling electroresistance, and tunneling electromagnetoresistance effects, we discuss the main origins of the tunneling electroresistance effect, recent progress in achieving multilevel resistance states in a single device, and the electrical control of spin polarization and transport through the ferroelectric polarization reversal of the tunneling barrier.

  16. Carpal Tunnel Syndrome

    Science.gov (United States)

    ... a passing cramp? It could be carpal tunnel syndrome. The carpal tunnel is a narrow passageway of ... three times more likely to have carpal tunnel syndrome than men. Early diagnosis and treatment are important ...

  17. Simulations of Resonant Intraband and Interband Tunneling Spin Filters

    Science.gov (United States)

    Ting, David; Cartoixa-Soler, Xavier; McGill, T. C.; Smith, Darryl L.; Schulman, Joel N.

    2001-01-01

    This viewgraph presentation reviews resonant intraband and interband tunneling spin filters It explores the possibility of building a zero-magnetic-field spin polarizer using nonmagnetic III-V semiconductor heterostructures. It reviews the extensive simulations of quantum transport in asymmetric InAs/GaSb/AlSb resonant tunneling structures with Rashba spin splitting and proposes a. new device concept: side-gated asymmetric Resonant Interband Tunneling Diode (a-RITD).

  18. Study of fully-depleted Ge double-gate n-type Tunneling Field-Effect Transistors for improvement in on-state current and sub-threshold swing

    Science.gov (United States)

    Liu, Xiangyu; Hu, Huiyong; Wang, Meng; Zhang, Heming; Cui, Shimin; Shu, Bin; Wang, Bin

    2018-01-01

    In this paper, a fully-depleted (FD) Ge double-gate (DG) n-type Tunneling Field-Effect Transistors (TFET) structure is studied in detail by two-dimensional numerical simulation. The simulation results indicated that the on-state current Ion and on-off ratio of the FD Ge DG-TFET increases about 1 order of magnitude comparing with the Conventional Ge DG-TFET, and Ion=3.95×10-5 A/μm and the below 60 mV/decade subthreshold swing S=26.4 mV/decade are achieved with the length of gate LD=20 nm, the workfuntion of metal gate Φm=0.2 eV and the doping concentration of n+-type-channel ND=1×1018 cm-3. Moreover, the impacts of Φm, ND and LD are investigated. The simulation results indicated that the off-state current Ioff includes the tunneling current at the middle of channel IB the gated-induced drain leakage (GIDL) current IGIDL. With optimized Φm and ND, Ioff is reduced about 2 orders of magnitude to 2.5×10-13 A/μm with LD increasing from 40 nm to 100 nm, and on-off ratio is increased to 1.58×107.

  19. Nanowire resonant tunneling diodes

    Science.gov (United States)

    Björk, M. T.; Ohlsson, B. J.; Thelander, C.; Persson, A. I.; Deppert, K.; Wallenberg, L. R.; Samuelson, L.

    2002-12-01

    Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/μm2 was observed at low temperatures.

  20. Tunnelling of orbital angular momentum in parallel optical waveguides

    International Nuclear Information System (INIS)

    Alexeyev, C N; Fadeyeva, T A; Yavorsky, M A; Boklag, N A

    2011-01-01

    We study the evolution of circularly polarized optical vortices (OVs) in the system of two coupled few-mode optical fibres. We demonstrate that upon propagation OVs tunnel into the adjacent fibre as a complex superposition of OVs that comprise also OVs of opposite polarization and topological charge. The initial OV may tunnel into the other fibre as the same vortex state of lesser energy. The evolution of the orbital angular momentum in coupled fibres is studied

  1. No evidence for orbital loop currents in charge-ordered YBa2Cu3O6 +x from polarized neutron diffraction

    Science.gov (United States)

    Croft, T. P.; Blackburn, E.; Kulda, J.; Liang, Ruixing; Bonn, D. A.; Hardy, W. N.; Hayden, S. M.

    2017-12-01

    It has been proposed that the pseudogap state of underdoped cuprate superconductors may be due to a transition to a phase which has circulating currents within each unit cell. Here, we use polarized neutron diffraction to search for the corresponding orbital moments in two samples of underdoped YBa2Cu3O6 +x with doping levels p =0.104 and 0.123. In contrast to some other reports using polarized neutrons, but in agreement with nuclear magnetic resonance and muon spin rotation measurements, we find no evidence for the appearance of magnetic order below 300 K. Thus, our experiment suggests that such order is not an intrinsic property of high-quality cuprate superconductor single crystals. Our results provide an upper bound for a possible orbital loop moment which depends on the pattern of currents within the unit cell. For example, for the CC-θI I pattern proposed by Varma, we find that the ordered moment per current loop is less than 0.013 μB for p =0.104 .

  2. Tunneling Anomalous and Spin Hall Effects.

    Science.gov (United States)

    Matos-Abiague, A; Fabian, J

    2015-07-31

    We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

  3. Excitation of Self-Localized Spin-Wave Bullets by Spin-Polarized Current in In-Plane Magnetized Magnetic Nano-Contacts: A Micromagnetic Study

    Science.gov (United States)

    2007-10-08

    excitation of microwave spin waves.3,10,11 The analytical theory of spin-wave excitation in magnetic nanocontacts by spin-polarized current performed...linear theory ,3 the propagating spin- wave mode excited at the threshold is a cylindrical spin- wave with the wave vector kL=1.2/Rc and frequency L... Oersted magnetic field, and/or by any other small interaction, neglected in the micromagnetic model. To make the excitation of subcritical modes12,15

  4. On a distribution of electric fields caused by the northern component of the interplanetary magnetic field in the absence of longitudinal currents in the winter polar cap

    International Nuclear Information System (INIS)

    Uvarov, V.M.

    1984-01-01

    Data on the distribution of electric fields, conditioned by the northern component of the interplanetary magnetic field Bsub(z), have been discussed. The problem of electric field excitation is reduced to the solution of equations of continuity for the current in three regions: northern and southern polar caps and region beyond the caps. At the values Bsub(z)>0 in the ranqe of latitudes phi >= 80 deg the localization of convection conversion effect is obtained in calculations for summer cap and it agrees with the data of direct measurements

  5. A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection

    Science.gov (United States)

    Zimmler, Mariano A.; Bao, Jiming; Shalish, Ilan; Yi, Wei; Narayanamurti, Venkatesh; Capasso, Federico

    2007-10-01

    We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device is that by reversing the polarity of the applied voltage the luminescence can be selectively obtained from either the nanowire or the substrate. For one polarity of the applied voltage, ultraviolet (and visible) light is generated in the GaN nanowire, while for the opposite polarity infrared light is emitted from the Si substrate. We propose a model, which explains the key features of the data, based on electron tunnelling from the valence band of one semiconductor into the conduction band of the other semiconductor. For example, for one polarity of the applied voltage, given a sufficient potential energy difference between the two semiconductors, electrons can tunnel from the valence band of GaN into the Si conduction band. This process results in the creation of holes in GaN, which can recombine with conduction band electrons generating GaN band-to-band luminescence. A similar process applies under the opposite polarity for Si light emission. This device structure affords an additional experimental handle to the study of electroluminescence in single nanowires and, furthermore, could be used as a novel approach to two-colour light-emitting devices.

  6. Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length

    OpenAIRE

    Tomioka, Katsuhiro; Fukui, Takashi

    2014-01-01

    We report on a fabrication of tunnel field-effect transistors using InGaAs nanowire/Si heterojunctions and the characterization of scaling of channel lengths. The devices consisted of single InGaAs nanowires with a diameter of 30 nm grown on p-type Si(111) substrates. The switch demonstrated steep subthreshold-slope (30 mV/decade) at drain-source voltage (V-DS) of 0.10 V. Also, pinch-off behavior appeared at moderately low VDS, below 0.10 V. Reducing the channel length of the transistors atta...

  7. Spin-dependent tunnelling in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Tsymbal, Evgeny Y; Mryasov, Oleg N; LeClair, Patrick R

    2003-01-01

    The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunnelling (SDT) in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunnelling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible applications in non-volatile random-access memories and next-generation magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. In this review article we present an overview of this field of research. We discuss various factors that control the spin polarization and magnetoresistance in MTJs. Starting from early experiments on SDT and their interpretation, we consider thereafter recent experiments and models which highlight the role of the electronic structure of the ferromagnets, the insulating layer, and the ferromagnet/insulator interfaces. We also discuss the role of disorder in the barrier and in the ferromagnetic electrodes and their influence on TMR. (topical review)

  8. Anomalous Hall effect and current spin polarization in Co2Fe X Heusler compounds (X =Al , Ga , In , Si , Ge , and Sn ): A systematic ab initio study

    Science.gov (United States)

    Huang, Hung-Lung; Tung, Jen-Chuan; Guo, Guang-Yu

    2015-04-01

    Co-based Heusler compounds are ferromagnetic with a high Curie temperature and a large magnetization density, and thus are promising for spintronic applications. In this paper, we perform a systematic ab initio study of two principal spin-related phenomena, namely, anomalous Hall effect and current spin polarization, in Co2-based Heusler compounds Co2Fe X (X =Al , Ga , In , Si , Ge , Sn ) in the cubic L2 1 structure within the density functional theory with the generalized gradient approximation (GGA). The accurate all-electron full-potential linearized augmented plane-wave method is used. First, we find that the spin polarization of the longitudinal current (PL) in Co2Fe X (X =Al , Ga , In , Al0.5Si0.5 , and Sn ) is ˜100 % even though that of the electronic states at the Fermi level (PD) is not. Further, the other compounds also have a high current spin polarization with PL>85 %. This indicates that all the Co2Fe X compounds considered are promising for spin-transport devices. Interestingly, PD is negative in Co2Fe X (X =Si , Ge , and Sn ), differing in sign from the PL as well as that from the transport experiments. Second, the calculated anomalous Hall conductivities (AHCs) are moderate, being within 200 S/cm, and agree well with the available experiments on a highly L2 1 ordered Co2FeSi specimen although they differ significantly from the reported experiments on other compounds where the B2 antisite disorders were present. Surprisingly, the AHC in Co2FeSi decreases and then changes sign when Si is replaced by Ge and finally by Sn. Third, the calculated total magnetic moments agree well with the corresponding experimental ones in all the studied compounds except Co2FeSi where a difference of 0.3 μB/f .u . exists. We also perform the GGA plus on-site Coulomb interaction U calculations in the GGA + U scheme. We find that including the U affects the calculated total magnetic moment, spin polarization and AHC significantly, and in most cases, unfortunately

  9. Palladium electrodes for molecular tunnel junctions

    International Nuclear Information System (INIS)

    Chang Shuai; Sen Suman; Zhang Peiming; Gyarfas, Brett; Ashcroft, Brian; Lindsay, Stuart; Lefkowitz, Steven; Peng Hongbo

    2012-01-01

    Gold has been the metal of choice for research on molecular tunneling junctions, but it is incompatible with complementary metal–oxide–semiconductor fabrication because it forms deep level traps in silicon. Palladium electrodes do not contaminate silicon, and also give higher tunnel current signals in the molecular tunnel junctions that we have studied. The result is cleaner signals in a recognition-tunneling junction that recognizes the four natural DNA bases as well as 5-methyl cytosine, with no spurious background signals. More than 75% of all the recorded signal peaks indicate the base correctly. (paper)

  10. Tuning the tunneling magnetoresistance by using fluorinated graphene in graphene based magnetic junctions

    Directory of Open Access Journals (Sweden)

    Shweta Meena

    2017-12-01

    Full Text Available Spin polarized properties of fluorinated graphene as tunnel barrier with CrO2 as two HMF electrodes are studied using first principle methods based on density functional theory. Fluorinated graphene with different fluorine coverages is explored as tunnel barriers in magnetic tunnel junctions. Density functional computation for different fluorine coverages imply that with increase in fluorine coverages, there is increase in band gap (Eg of graphene, Eg ∼ 3.466 e V was observed when graphene sheet is fluorine adsorbed on both-side with 100% coverage (CF. The results of CF graphene are compared with C4F (fluorination on one-side of graphene sheet with 25% coverage and out-of-plane graphene based magnetic tunnel junctions. On comparison of the results it is observed that CF graphene based structure offers high TMR ∼100%, and the transport of carrier is through tunneling as there are no transmission states near Fermi level. This suggests that graphene sheet with both-side fluorination with 100% coverages acts as a perfect insulator and hence a better barrier to the carriers which is due to negligible spin down current (I↓ in both Parallel Configuration (PC and Antiparallel Configuration (APC.

  11. Spin Tunneling in Junctions with Disordered Ferromagnets

    NARCIS (Netherlands)

    Paluskar, P.V.; Attema, J.J.; de Wijs, G.A.; Fiddy, S.; Snoeck, E.; Kohlhepp, J.T.; Swagten, H.J.M.; de Groot, R. A.; Koopmans, H.

    2008-01-01

    We provide compelling evidence to establish that, contrary to one’s elementary guess, the tunneling spin polarization (TSP) of amorphous CoFeB is larger than that of fcc CoFeB. First-principles atomic and electronic structure calculations reveal striking agreement between the measured TSP and the

  12. Use of cyclic current reversal polarization voltammetry for investigating the relationship between corrosion resistance and heat-treatment induced variations in microstructures of 400 C martensitic stainless steels

    Science.gov (United States)

    Ambrose, John R.

    1992-01-01

    Software for running a cyclic current reversal polarization voltammagram has been developed for use with a EG&G Princeton Applied Research Model 273 potentiostat/galvanostat system. The program, which controls the magnitude, direction and duration of an impressed galvanostatic current, will produce data in ASCII spreadsheets (Lotus, Quattro) for graphical representation of CCRPV voltammograms. The program was used to determine differences in corrosion resistance of 440 C martenstic stainless steel produced as a result of changes in microstructure effected by tempering. It was determined that tempering at all temperatures above 400 F resulted in increased polarizability of the material, with the increased likelihood that pitting would be initiated upon exposure to marine environments. These results will be used in development of remedial procedures for lowering the susceptibility of these alloys toward the stress corrosion cracking experienced in bearings used in high pressure oxygen turbopumps used in the main engines of space shuttle orbiters.

  13. Polarization Optics

    OpenAIRE

    Fressengeas, Nicolas

    2010-01-01

    The physics of polarization optics *Polarized light propagation *Partially polarized light; DEA; After a brief introduction to polarization optics, this lecture reviews the basic formalisms for dealing with it: Jones Calculus for totally polarized light and Stokes parameters associated to Mueller Calculus for partially polarized light.

  14. Theory of superconducting tunneling without the tunneling Hamiltonian

    International Nuclear Information System (INIS)

    Arnold, G.B.

    1987-01-01

    When a tunneling barrier is nearly transparent, the standard tunneling (or transfer) Hamiltonian approximation fails. The author describes the theory which is necessary for calculating the tunneling current in these cases, and illustrate it by comparing theory and experiment on superconductor/insulator/superconductor (SIS) junctions have ultra-thin tunnel barriers. This theory accurately explains the subgap structure which appears in the dynamical resistance of such SIS junctions, including many observed details which no previous theory has reproduced. The expression for the current through an SIS junction with an ultrathin barrier is given by I(t) = Re{Sigma/sub n/ J/sub n/ (omega/sub o/)e/sup in omega/o/sup t/} where omega/sub o/ = 2eV/h is the Josephson frequency, V is the bias voltage, and the J/sub n/ are voltage dependent coefficients, one for each positive or negative integer, n, and n=0. The relative sign of the terms involving cos(n omega/sub o/t) and sin(n omega/sub o/t) agrees with experiment, in contrast to previous theories of Josephson tunneling

  15. Current density and polarization curves for radial flow field patterns applied to PEMFCs (Proton Exchange Membrane Fuel Cells)

    International Nuclear Information System (INIS)

    Cano-Andrade, S.; Hernandez-Guerrero, A.; Spakovsky, M.R. von; Damian-Ascencio, C.E.; Rubio-Arana, J.C.

    2010-01-01

    A numerical solution of the current density and velocity fields of a 3-D PEM radial configuration fuel cell is presented. The energy, momentum and electrochemical equations are solved using a computational fluid dynamics (CFD) code based on a finite volume scheme. There are three cases of principal interest for this radial model: four channels, eight channels and twelve channels placed in a symmetrical path over the flow field plate. The figures for the current-voltage curves for the three models proposed are presented, and the main factors that affect the behavior of each of the curves are discussed. Velocity contours are presented for the three different models, showing how the fuel cell behavior is affected by the velocity variations in the radial configuration. All these results are presented for the case of high relative humidity. The favorable results obtained for this unconventional geometry seems to indicate that this geometry could replace the conventional commercial geometries currently in use.

  16. Transcranial direct current stimulation (tDCS) reveals a dissociation between SNARC and MARC effects: Implication for the polarity correspondence account.

    Science.gov (United States)

    Di Rosa, Elisa; Bardi, Lara; Umiltà, Carlo; Masina, Fabio; Forgione, Margherita; Mapelli, Daniela

    2017-08-01

    The concept of stimulus response compatibility (SRC) refers to the existence of a privileged association between a specific stimulus feature and a specific response feature. Two examples of SRC are the Spatial Numerical Association of Response Codes (SNARC) and the Markedness Association of Response Codes (MARC) effects. According to the polarity correspondence principle, these two SRC effects occur because of a match between the most salient dimensions of stimulus and response. Specifically, the SNARC effect would be caused by a match between right-sided responses and large numbers, while a match between right-sided responses and even numbers would give rise to the MARC effect. The aim of the present study was to test the validity of the polarity correspondence principle in explaining these two SRC effects. To this end, we applied transcranial direct current stimulation (tDCS) over left and right posterior parietal cortex (PPC), which is thought to be the neural basis of salience processing, during a parity judgement task. Results showed that cathodal tDCS over the PPC significantly reduced the MARC effect but did not affect the SNARC effect, suggesting a dissociation between the two effects. That is, the MARC would rely on a salience processing mechanism, whereas the SNARC would not. Despite this interpretation is in need of further experimental confirmations (i.e., testing different tasks or using different tDCS montages), our results suggest that the polarity correspondence principle can be a plausible explanation only for the MARC effect but not for the SNARC effect. Copyright © 2017 Elsevier Ltd. All rights reserved.

  17. Counter Tunnel Project

    Science.gov (United States)

    2014-03-01

    DSP-3000 fiber - optic gyro , MicroStrain 3DM-GX2 IMU, with USB and Ethernet connec- tors. Small enough to fit into all the tunnels that were explored...frame arms were sufficient for de- ployment of the RDC. Gigabit multi-mode fiber - optic communication and 48 VDC power were passed to the RDC through...with AcuAMP ACT050 current sensors. The control box monitoring all of the information, as well as the source of the 48 VDC and fiber - optic cable to

  18. A model of the plasma flow and current in Saturn's polar ionosphere under conditions of strong Dungey cycle driving

    Directory of Open Access Journals (Sweden)

    C. M. Jackman

    2006-05-01

    Full Text Available We propose a simple model of the flow and currents in Saturn's polar ionosphere. This model is motivated by theoretical reasoning, and guided quantitatively by in situ field and flow data from space missions, ground-based IR Doppler measurements, and Hubble Space Telescope images. The flow pattern consists of components which represent (1 plasma sub-corotation in the middle magnetosphere region resulting from plasma pick-up and radial transport from internal sources; (2 the Vasyliunas-cycle of internal plasma mass-loss down the magnetospheric tail at higher latitudes; and (3 the polar Dungey-cycle flow driven by the solar wind interaction. Upstream measurements of the interplanetary magnetic field (IMF indicate the occurrence of both extended low-field rarefaction intervals with essentially negligible Dungey-cycle flow, and few-day high-field compression regions in which the Dungey-cycle voltage peaks at a few hundred kV. Here we model the latter conditions when the Dungey-cycle is active, advancing on previous axi-symmetric models which may be more directly applicable to quiet conditions. For theoretical convenience the overall flow pattern is constructed by adding together two components - a purely rotational flow similar to previous axi-symmetric models, and a sun-aligned twin vortex representing the dawn-dusk asymmetry effects associated with the Vasyliunas-and Dungey-cycle flows. We calculate the horizontal ionospheric current associated with the flow and the field-aligned current from its divergence. These calculations show that a sheet of upward-directed field-aligned current flows at the boundary of open field lines which is strongly modulated in local-time by the Dungey-cycle flows. We then consider implications of the field-aligned current for magnetospheric electron acceleration and aurorae using two plasma source populations (hot outer magnetospheric electrons and cool dense magnetosheath electrons. Both sources display a

  19. Real-space distribution of the Hall current densities and their spin polarization in nonmagnetic zine-blende semiconductors

    Czech Academy of Sciences Publication Activity Database

    Středa, Pavel; Drchal, Václav

    2012-01-01

    Roč. 86, č. 19 (2012), "195204-1"-"195204-8" ISSN 1098-0121 R&D Projects: GA ČR(CZ) GAP204/11/1228 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : nonmagnetic semiconductors * spin Hall currents Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.767, year: 2012

  20. Visualization of the interfacial turbulence associated with remarkable faradaic current amplification at a polarized water/1,2-dichloroethane interface

    Czech Academy of Sciences Publication Activity Database

    Trojánek, Antonín; Mareček, Vladimír; Samec, Zdeněk

    2017-01-01

    Roč. 80, JUL 2017 (2017), s. 1-4 ISSN 1388-2481 R&D Projects: GA ČR GA17-09980S Institutional support: RVO:61388955 Keywords : Water/1,2-dichloroethane interface * Ion transfer * Current amplification Subject RIV: CG - Electrochemistry OBOR OECD: Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) Impact factor: 4.396, year: 2016

  1. Visualization of the interfacial turbulence associated with remarkable faradaic current amplification at a polarized water/1,2-dichloroethane interface

    Czech Academy of Sciences Publication Activity Database

    Trojánek, Antonín; Mareček, Vladimír; Samec, Zdeněk

    Roč. 80, JUL 2017 (2017), s. 1-4 ISSN 1388-2481 R&D Projects: GA ČR GA17-09980S Institutional support: RVO:61388955 Keywords : Water/1,2-dichloroethane interface * Ion transfer * Current amplification Subject RIV: CG - Electrochemistry OBOR OECD: Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) Impact factor: 4.396, year: 2016

  2. The interplanetary magnetic field By-dependent field-aligned current in the dayside polar cap under quiet conditions

    International Nuclear Information System (INIS)

    Yamauchi, M.; Araki, T.

    1989-01-01

    Spatial distribution and temporal variation of the interplanetary magnetic field (IMF) B y -dependent cusp region field-aligned currents (FACs) during quiet periods were studied by use of magnetic data observed by Magsat. The analysis was made for 11 events (each event lasts more than one and a half days) when the IMF B y component was steadily large and B x was relatively small (|B z | y |). Results of the analysis of total 62 half-day periods for the IMF B y -dependent cusp region FAC are summarized as follows: (1) the IMF B y -dependent cusp region FAC is located at around 86 degree-87 degree invariant latitude local noon, which is more poleward than the location of the IMF B z -dependent cusp region FAC; (2) the current density of this FAC is greater than previous studies (≥ 4 μA/m 2 for IMF B y = 6 nT); (3) there are two time scales for the IMF B y -dependent cusp region FAC to appear: the initial rise of the current is on a short time scale, ∼ 10 min, and it is followed by a gradual increase on a time scale of several hours to a half day; (4) the seasonal change of this FAC is greater than that of the nightside region 1 or region 2 FACs; (5) the IMF B z -dependent cusp region FAC is not well observed around the cusp when the IMF B y -dependent cusp region FAC is intense

  3. Band-to-Band Tunneling Transistors: Scalability and Circuit Performance

    Science.gov (United States)

    2013-05-01

    55* MEDICI ...3.2.1 Tunneling Theory 3.3 Simulation Methods 3.3.1 MEDICI 3.3.2 Sentaurus Local Tunneling 3.3.3 Sentaurus Nonlocal Tunneling 3.4 Sentaurus...tunneling current. 3.3.1 MEDICI MEDICI is a one and two-dimensional simulator created by Synopsys, Inc. [18]. It contains a band-to-band

  4. Dark states in spin-polarized transport through triple quantum dot molecules

    Science.gov (United States)

    Wrześniewski, K.; Weymann, I.

    2018-02-01

    We study the spin-polarized transport through a triple-quantum-dot molecule weakly coupled to ferromagnetic leads. The analysis is performed by means of the real-time diagrammatic technique, including up to the second order of perturbation expansion with respect to the tunnel coupling. The emphasis is put on the impact of dark states on spin-resolved transport characteristics. It is shown that the interplay of coherent population trapping and cotunneling processes results in a highly nontrivial behavior of the tunnel magnetoresistance, which can take negative values. Moreover, a super-Poissonian shot noise is found in transport regimes where the current is blocked by the formation of dark states, which can be additionally enhanced by spin dependence of tunneling processes, depending on the magnetic configuration of the device. The mechanisms leading to those effects are thoroughly discussed.

  5. Superconducting tunnel-junction refrigerator

    International Nuclear Information System (INIS)

    Melton, R.G.; Paterson, J.L.; Kaplan, S.B.

    1980-01-01

    The dc current through an S 1 -S 2 tunnel junction, with Δ 2 greater than Δ 1 , when biased with eV 1 +Δ 2 , will lower the energy in S 1 . This energy reduction will be shared by the phonons and electrons. This device is shown to be analogous to a thermoelectric refrigerator with an effective Peltier coefficient π* approx. Δ 1 /e. Tunneling calculations yield the cooling power P/sub c/, the electrical power P/sub e/ supplied by the bias supply, and the cooling efficiency eta=P/sub c//P/sub e/. The maximum cooling power is obtained for eV= +- (Δ 2 -Δ 1 ) and t 1 =T 1 /T/sub c/1 approx. 0.9. Estimates are made of the temperature difference T 2 -T 1 achievable in Al-Pb and Sn-Pb junctions with an Al 2 O 3 tunneling barrier. The performance of this device is shown to yield a maximum cooling efficiency eta approx. = Δ 1 /(Δ 2 -Δ 1 ) which can be compared with that available in an ideal Carnot refrigerator of eta=T 1 /(T 2 -T 1 ). The development of a useful tunnel-junction refrigerator requires a tunneling barrier with an effective thermal conductance per unit area several orders of magnitude less than that provided by the A1 2 O 3 barrier in the Al-Pb and Sn-Pb systems

  6. Hypersonic Tunnel Facility (HTF)

    Data.gov (United States)

    Federal Laboratory Consortium — The Hypersonic Tunnel Facility (HTF) is a blow-down, non-vitiated (clean air) free-jet wind tunnel capable of testing large-scale, propulsion systems at Mach 5, 6,...

  7. Quantum theory of tunneling

    CERN Document Server

    Razavy, Mohsen

    2014-01-01

    In this revised and expanded edition, in addition to a comprehensible introduction to the theoretical foundations of quantum tunneling based on different methods of formulating and solving tunneling problems, different semiclassical approximations for multidimensional systems are presented. Particular attention is given to the tunneling of composite systems, with examples taken from molecular tunneling and also from nuclear reactions. The interesting and puzzling features of tunneling times are given extensive coverage, and the possibility of measurement of these times with quantum clocks are critically examined. In addition by considering the analogy between evanescent waves in waveguides and in quantum tunneling, the times related to electromagnetic wave propagation have been used to explain certain aspects of quantum tunneling times. These topics are treated in both non-relativistic as well as relativistic regimes. Finally, a large number of examples of tunneling in atomic, molecular, condensed matter and ...

  8. Road and Railroad Tunnels

    Data.gov (United States)

    Department of Homeland Security — Tunnels in the United States According to the HSIP Tiger Team Report, a tunnel is defined as a linear underground passageway open at both ends. This dataset is based...

  9. Transonic Dynamics Tunnel (TDT)

    Data.gov (United States)

    Federal Laboratory Consortium — The Transonic Dynamics Tunnel (TDT) is a continuous flow wind-tunnel facility capable of speeds up to Mach 1.2 at stagnation pressures up to one atmosphere. The TDT...

  10. Polarized Electrons at Jefferson Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Sinclair, C.K.

    1997-12-31

    The CEBAF accelerator at Jefferson laboratory can deliver CW electron beams to three experimental halls simultaneously. A large fraction of the approved scientific program at the lab requires polarized electron beams. Many of these experiments, both polarized and unpolarized, require high average beam current as well. Since all electrons delivered to the experimental halls originate from the same cathode, delivery of polarized beam to a single hall requires using the polarized source to deliver beam to all experiments in simultaneous operation. The polarized source effort at Jefferson Lab is directed at obtaining very long polarized source operational lifetimes at high average current and beam polarization; at developing the capability to deliver all electrons leaving the polarized source to the experimental halls; and at delivering polarized beam to multiple experimental halls simultaneously.initial operational experience with the polarized source will be presented.

  11. Polarized electrons at Jefferson laboratory

    International Nuclear Information System (INIS)

    The CEBAF accelerator at Jefferson laboratory can deliver CW electron beams to three experimental halls simultaneously. A large fraction of the approved scientific program at the lab requires polarized electron beams. Many of these experiments, both polarized and unpolarized, require high average beam current as well. Since all electrons delivered to the experimental halls originate from the same cathode, delivery of polarized beam to a single hall requires using the polarized source to deliver beam to all experiments in simultaneous operation. The polarized source effort at Jefferson Lab is directed at obtaining very long polarized source operational lifetimes at high average current and beam polarization; at developing the capability to deliver all electrons leaving the polarized source to the experimental halls; and at delivering polarized beam to multiple experimental halls simultaneously. Initial operational experience with the polarized source will be presented

  12. Tunneling anisotropic magnetoresistance driven by magnetic phase transition.

    Science.gov (United States)

    Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F

    2017-09-06

    The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.

  13. Major SSC tunneling begins

    International Nuclear Information System (INIS)

    Anon.

    1993-01-01

    In Texas, work has been completed on the first on the Superconducting Supercollider's major shafts. Now a boring machine has started driving the fifty-four mile elliptical accelerator tunnel. To date, contracts let for the tunnel have come in far below preliminary estimates. Five of the main fourteen foot diameter tunnel contracts have been awarded for a total of 107.4 million dollars, about forty million dollars below estimates. These contracts represent %60 percent of the total tunneling project

  14. Particulate organic carbon export across the Antarctic Circumpolar Current at 10°E: Differences between north and south of the Antarctic Polar Front

    Science.gov (United States)

    Puigcorbé, Viena; Roca-Martí, Montserrat; Masqué, Pere; Benitez-Nelson, Claudia R.; Rutgers v. d. Loeff, Michiel; Laglera, Luis M.; Bracher, Astrid; Cheah, Wee; Strass, Volker H.; Hoppema, Mario; Santos-Echeandía, Juan; Hunt, Brian P. V.; Pakhomov, Evgeny A.; Klaas, Christine

    2017-04-01

    The vertical distribution of 234Th was measured along the 10°E meridian between 44°S and 53°S in the Antarctic Circumpolar Current (ACC) during the austral summer of 2012. The overarching goal of this work was to estimate particulate organic carbon (POC) export across three fronts: the Sub-Antarctic Front (SAF), the Antarctic Polar Front (APF) and the Southern Polar Front (SPF). Steady state export fluxes of 234Th in the upper 100 m ranged from 1600 to 2600 dpm m-2 d-1, decreasing with increasing latitude. Using large particle (>53 μm) C/234Th ratios, the 234Th-derived POC fluxes at 100 m ranged from 25 to 41 mmol C m-2 d-1. Observed C/234Th ratios decreased with increasing depth north of the APF while south of the APF, ratios remained similar or even increased with depth. These changes in C/234Th ratios are likely due to differences in the food web. Indeed, satellite images, together with macronutrients and dissolved iron concentrations suggest two different planktonic community structures north and south of the APF. Our results indicate that higher ratios of POC flux at 100 m to primary production occurred in nanophytoplankton dominated surface waters, where primary production rates were lower. Satellite images prior to the expedition suggest that the higher export efficiencies obtained in the northern half of the transect may be the result of the decoupling between production and export (Buesseler 1998). Transfer efficiencies to 400 m, i.e. the fraction of exported POC that reached 400 m, were found to be higher south of the APF, where diatoms were dominant and salps largely abundant. This suggests different remineralization pathways of sinking particles, influencing the transfer efficiency of exported POC to depth.

  15. Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2012-06-01

    In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

  16. Taking Sides: An Integrative Review of the Impact of Laterality and Polarity on Efficacy of Therapeutic Transcranial Direct Current Stimulation for Anomia in Chronic Poststroke Aphasia

    Science.gov (United States)

    Sandars, Margaret; Cloutman, Lauren; Woollams, Anna M.

    2016-01-01

    Anomia is a frequent and persistent symptom of poststroke aphasia, resulting from damage to areas of the brain involved in language production. Cortical neuroplasticity plays a significant role in language recovery following stroke and can be facilitated by behavioral speech and language therapy. Recent research suggests that complementing therapy with neurostimulation techniques may enhance functional gains, even amongst those with chronic aphasia. The current review focuses on the use of transcranial Direct Current Stimulation (tDCS) as an adjunct to naming therapy for individuals with chronic poststroke aphasia. Our survey of the literature indicates that combining therapy with anodal (excitatory) stimulation to the left hemisphere and/or cathodal (inhibitory) stimulation to the right hemisphere can increase both naming accuracy and speed when compared to the effects of therapy alone. However, the benefits of tDCS as a complement to therapy have not been yet systematically investigated with respect to site and polarity of stimulation. Recommendations for future research to help determine optimal protocols for combined therapy and tDCS are outlined. PMID:26819777

  17. Taking Sides: An Integrative Review of the Impact of Laterality and Polarity on Efficacy of Therapeutic Transcranial Direct Current Stimulation for Anomia in Chronic Poststroke Aphasia

    Directory of Open Access Journals (Sweden)

    Margaret Sandars

    2016-01-01

    Full Text Available Anomia is a frequent and persistent symptom of poststroke aphasia, resulting from damage to areas of the brain involved in language production. Cortical neuroplasticity plays a significant role in language recovery following stroke and can be facilitated by behavioral speech and language therapy. Recent research suggests that complementing therapy with neurostimulation techniques may enhance functional gains, even amongst those with chronic aphasia. The current review focuses on the use of transcranial Direct Current Stimulation (tDCS as an adjunct to naming therapy for individuals with chronic poststroke aphasia. Our survey of the literature indicates that combining therapy with anodal (excitatory stimulation to the left hemisphere and/or cathodal (inhibitory stimulation to the right hemisphere can increase both naming accuracy and speed when compared to the effects of therapy alone. However, the benefits of tDCS as a complement to therapy have not been yet systematically investigated with respect to site and polarity of stimulation. Recommendations for future research to help determine optimal protocols for combined therapy and tDCS are outlined.

  18. Polarization in Sagittarius A*

    OpenAIRE

    Bower, Geoffrey C.

    2000-01-01

    We summarize the current state of polarization observations of Sagittarius A*, the compact radio source and supermassive black hole candidate in the Galactic Center. These observations are providing new tools for understanding accretion disks, jets and their environments. Linear polarization observations have shown that Sgr A* is unpolarized at frequencies as high as 86 GHz. However, recent single-dish observations indicate that Sgr A* may have strong linear polarization at frequencies higher...

  19. Dynamic strain-induced giant electroresistance and erasing effect in ultrathin ferroelectric tunnel-junction memory

    Science.gov (United States)

    Yau, Hei-Man; Xi, Zhongnan; Chen, Xinxin; Wen, Zheng; Wu, Ge; Dai, Ji-Yan

    2017-06-01

    Strain engineering plays a critical role in ferroelectric memories. In this work, we demonstrate dynamic strain modulation on tunneling electroresistance in a four-unit-cell ultrathin BaTi O3 metal/ferroelectric/semiconductor tunnel junction by applying mechanical stress to the device. With an extra compressive strain induced by mechanical stress, which is dynamically applied beyond the lattice mismatch between the BaTi O3 layer and the Nb :SrTi O3 substrate, the ON/OFF current ratio increases significantly up to a record high value of 107, whereas a mechanical erasing effect can be observed when a tensile stress is applied. This dynamic strain engineering gives rise to an efficient modulation of ON/OFF ratio due to the variation of BaTi O3 polarization. This result sheds light on the mechanism of electroresistance in the ferroelectric tunnel junctions by providing direct evidence for polarization-induced resistive switching, and also provides another stimulus for memory state operation.

  20. Control circuit for a scanning tunneling microscope

    Science.gov (United States)

    Munoz, Raúl C.; Villagra, Paolo; Kremer, Germán; Moraga, Luis; Vidal, Guillermo

    1998-09-01

    We have successfully built and tested a circuit designed to control a piezoelectric tube scanner having the standard single inner-electrode quartered outer-electrode configuration, using digital-to-analog (D/A) converters commercially available. To avoid noise associated with the PC, the signals transmitted by the D/A channels to the control electronics are received by instrumentation amplifiers INA 105 at the control circuit, providing 86 dB common mode rejection, thereby over four orders of magnitude of immunity to common mode noise. To prevent ground loops in the communication between the control electronics and the analog-to-digital (A/D) converters, a novel approach was used. The signals sent by the control electronics to the A/D converters were transmitted via isolation amplifiers ISO 122 followed by a 10 kHz Sallen-Key low pass filter incorporated at each output of the control circuit, providing galvanic isolation between the control electronics and the PC, thereby eliminating ground loops. The control circuit was designed to allow analog as well as digital feedback, selectable via a toggle switch. The design also incorporates the possibility of using two independent external signals to modulate the polarization of the sample and two independent external signals to modulate the piezoelectric transducer drive along the Z direction. It also incorporates the possibility of electronically canceling the slope that might occur while scanning due to the sample being tilted along the X axis (fast scan direction) and/or along the Y axis (slow scan direction). The circuit was tested using two 12 bit A/D-D/A converters DAS 1602 to control the scanner of a scanning tunneling microscope, with a home-built scanning head, electrometer, and preamplifier. With the complete system in operation but in the absence of tunneling current, the electrometer exhibits a current noise under 3 pA rms and a response time of 30 μs to a step input current, a performance that compares well

  1. Large tunneling magnetoresistance in octahedral Fe{sub 3}O{sub 4} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Mitra, Arijit; Barick, Barun; Sharma, H. [Department of Physics, IIT Bombay, Powai, Mumbai- 400076 (India); Mohapatra, Jeotikanta [Centre for Research in Nanotechnology and Science (CRNTS), IIT Bombay, Powai, Mumbai 400076 (India); Meena, S. S. [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai, 400085 (India); Aslam, M., E-mail: m.aslam@iitb.ac.in [Department of Physics, IIT Bombay, Powai, Mumbai- 400076 (India); Centre for Research in Nanotechnology and Science (CRNTS), IIT Bombay, Powai, Mumbai 400076 (India)

    2016-05-15

    We have observed large tunneling Magnetoresistance (TMR) in amine functionalized octahedral nanoparticle assemblies. Amine monolayer on the surface of nanoparticles acts as an insulating barrier between the semimetal Fe{sub 3}O{sub 4} nanoparticles and provides multiple tunnel junctions where inter-granular tunneling is plausible. The tunneling magnetoresistance recorded at room temperature is 38% which increases to 69% at 180 K. When the temperature drops below 150 K, coulomb staircase is observed in the current versus voltage characteristics as the charging energy exceeds the thermal energy. A similar study is also carried out with spherical nanoparticles. A 24% TMR is recorded at room temperature which increases to 41% at 180 K for spherical particles. Mössbauer spectra reveal better stoichiometry for octahedral particles which is attainable due to lesser surface disorder and strong amine coupling at the <111> facets of octahedral Fe{sub 3}O{sub 4} nanoparticles. Less stoichiometric defect in octahedral nanoparticles leads to a higher value of spin polarization and therefore larger TMR in octahedral nanoparticles.

  2. High current gain silicon-based spin transistor

    CERN Document Server

    Dennis, C L; Ensell, G J; Gregg, J F; Thompson, S M

    2003-01-01

    A silicon-based spin transistor of novel operating principle has been demonstrated in which the current gain at room temperature is 1.4 (n-type) and 0.97 (p-type). This high current gain was obtained from a hybrid metal/semiconductor analogue to the bipolar junction transistor which functions by tunnel-injecting carriers from a ferromagnetic emitter into a diffusion driven silicon base and then tunnel-collecting them via a ferromagnetic collector. The switching of the magnetic state of the collector ferromagnet controls the collector efficiency and the current gain. Furthermore, the magnetocurrent, which is determined to be 98% (140%) for p-type (n-type) in -110 Oe, is attributable to the spin-polarized base diffusion current.

  3. Silicon spintronics with ferromagnetic tunnel devices

    International Nuclear Information System (INIS)

    Jansen, R; Sharma, S; Dash, S P; Min, B C

    2012-01-01

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

  4. Phonon-assisted tunneling and its dependence on pressure

    International Nuclear Information System (INIS)

    Roy, P.N.; Singh, A.P.; Thakur, B.N.

    1999-01-01

    First the mechanism of phonon-assisted tunneling has been investigated. The indirect tunnel current density has been computed after taking the amplitude of the time dependent perturbation as the energy of the lattice vibration. Later the pressure dependence of the phonon-assisted tunnel current has been computed using Payne's expression for the dependence of phonon frequency on pressure. Very good qualitative agreements are obtained between predicted and observed characteristics. (author)

  5. Polarized Proton Collisions at RHIC

    CERN Document Server

    Bai, Mei; Alekseev, Igor G; Alessi, James; Beebe-Wang, Joanne; Blaskiewicz, Michael; Bravar, Alessandro; Brennan, Joseph M; Bruno, Donald; Bunce, Gerry; Butler, John J; Cameron, Peter; Connolly, Roger; De Long, Joseph; Drees, Angelika; Fischer, Wolfram; Ganetis, George; Gardner, Chris J; Glenn, Joseph; Hayes, Thomas; Hseuh Hsiao Chaun; Huang, Haixin; Ingrassia, Peter; Iriso, Ubaldo; Laster, Jonathan S; Lee, Roger C; Luccio, Alfredo U; Luo, Yun; MacKay, William W; Makdisi, Yousef; Marr, Gregory J; Marusic, Al; McIntyre, Gary; Michnoff, Robert; Montag, Christoph; Morris, John; Nicoletti, Tony; Oddo, Peter; Oerter, Brian; Osamu, Jinnouchi; Pilat, Fulvia Caterina; Ptitsyn, Vadim; Roser, Thomas; Satogata, Todd; Smith, Kevin T; Svirida, Dima; Tepikian, Steven; Tomas, Rogelio; Trbojevic, Dejan; Tsoupas, Nicholaos; Tuozzolo, Joseph; Vetter, Kurt; Wilinski, Michelle; Zaltsman, Alex; Zelenski, Anatoli; Zeno, Keith; Zhang, S Y

    2005-01-01

    The Relativistic Heavy Ion Collider~(RHIC) provides not only collisions of ions but also collisions of polarized protons. In a circular accelerator, the polarization of polarized proton beam can be partially or fully lost when a spin depolarizing resonance is encountered. To preserve the beam polarization during acceleration, two full Siberian snakes were employed in RHIC to avoid depolarizing resonances. In 2003, polarized proton beams were accelerated to 100~GeV and collided in RHIC. Beams were brought into collisions with longitudinal polarization at the experiments STAR and PHENIX by using spin rotators. RHIC polarized proton run experience demonstrates that optimizing polarization transmission efficiency and improving luminosity performance are significant challenges. Currently, the luminosity lifetime in RHIC is limited by the beam-beam effect. The current state of RHIC polarized proton program, including its dedicated physics run in 2005 and efforts to optimize luminosity production in beam-beam limite...

  6. Mechanical tunnel excavation in welded tuff

    International Nuclear Information System (INIS)

    Sperry, P.E.

    1991-01-01

    The Technical Review Board for the US high-level radioactive waste facility at Yucca Mountain has recommended maximum use of open-quotes the most modern mechanical excavation techniques...in order to reduce disturbance to the rock walls and to achieve greater economy of time and cost.close quotes Tunnels for the waste repository at Yucca Mountain can be economically constructed with mechanical excavation equipment. This paper presents the results of mechanical excavation of a tunnel in welded tuff, similar to the tuffs of Yucca Mountain. These results are projected to excavation of emplacement drifts in Yucca Mountain using a current state-of-the-art tunnel boring machine (TBM)

  7. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur

    2011-08-09

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.

  8. Polarization at SLC

    International Nuclear Information System (INIS)

    Swartz, M.L.

    1988-07-01

    The SLAC Linear Collider has been designed to readily accommodate polarized electron beams. Considerable effort has been made to implement a polarized source, a spin rotation system, and a system to monitor the beam polarization. Nearly all major components have been fabricated. At the current time, several source and polarimeter components have been installed. The installation and commissioning of the entire system will take place during available machine shutdown periods as the commissioning of SLC progresses. It is expected that a beam polarization of 45% will be achieved with no loss in luminosity. 13 refs., 15 figs

  9. Ab initio theory for current-induced molecular switching: Melamine on Cu(001)

    KAUST Repository

    Ohto, Tatsuhiko

    2013-05-28

    Melamine on Cu(001) is mechanically unstable under the current of a scanning tunneling microscope tip and can switch among configurations. However, these are not equally accessible, and the switching critical current depends on the bias polarity. In order to explain such rich phenomenology, we have developed a scheme to evaluate the evolution of the reaction paths and activation barriers as a function of bias, which is rooted in the nonequilibrium Green\\'s function method implemented within density functional theory. This, combined with the calculation of the inelastic electron tunneling spectroscopy signal, allows us to identify the vibrational modes promoting the observed molecular conformational changes. Finally, once our ab initio results are used within a resonance model, we are able to explain the details of the switching behavior, such as its dependence on the bias polarity, and the noninteger power relation between the reaction rate constants and both the bias voltage and the electric current. © 2013 American Physical Society.

  10. Quantum switching of polarization in mesoscopic ferroelectrics

    International Nuclear Information System (INIS)

    Sa de Melo, C.A.

    1996-01-01

    A single domain of a uniaxial ferroelectric grain may be thought of as a classical permanent memory. At the mesoscopic level this system may experience considerable quantum fluctuations due to tunneling between two possible memory states, thus destroying the classical permanent memory effect. To study these quantum effects the concrete example of a mesoscopic uniaxial ferroelectric grain is discussed, where the orientation of the electric polarization determines two possible memory states. The possibility of quantum switching of the polarization in mesoscopic uniaxial ferroelectric grains is thus proposed. To determine the degree of memory loss, the tunneling rate between the two polarization states is calculated at zero temperature both in the absence and in the presence of an external static electric field. In addition, a discussion of crossover temperature between thermally activated behavior and quantum tunneling behavior is presented. And finally, environmental effects (phonons, defects, and surfaces) are also considered. copyright 1996 The American Physical Society

  11. Physical model for recognition tunneling

    International Nuclear Information System (INIS)

    Krstić, Predrag; Ashcroft, Brian; Lindsay, Stuart

    2015-01-01

    Recognition tunneling (RT) identifies target molecules trapped between tunneling electrodes functionalized with recognition molecules that serve as specific chemical linkages between the metal electrodes and the trapped target molecule. Possible applications include single molecule DNA and protein sequencing. This paper addresses several fundamental aspects of RT by multiscale theory, applying both all-atom and coarse-grained DNA models: (1) we show that the magnitude of the observed currents are consistent with the results of non-equilibrium Green’s function calculations carried out on a solvated all-atom model. (2) Brownian fluctuations in hydrogen bond-lengths lead to current spikes that are similar to what is observed experimentally. (3) The frequency characteristics of these fluctuations can be used to identify the trapped molecules with a machine-learning algorithm, giving a theoretical underpinning to this new method of identifying single molecule signals. (paper)

  12. Single-contact tunneling thermometry

    Science.gov (United States)

    Maksymovych, Petro

    2016-02-23

    A single-contact tunneling thermometry circuit includes a tunnel junction formed between two objects. Junction temperature gradient information is determined based on a mathematical relationship between a target alternating voltage applied across the junction and the junction temperature gradient. Total voltage measured across the junction indicates the magnitude of the target alternating voltage. A thermal gradient is induced across the junction. A reference thermovoltage is measured when zero alternating voltage is applied across the junction. An increasing alternating voltage is applied while measuring a thermovoltage component and a DC rectification voltage component created by the applied alternating voltage. The target alternating voltage is reached when the thermovoltage is nullified or doubled by the DC rectification voltage depending on the sign of the reference thermovoltage. Thermoelectric current and current measurements may be utilized in place of the thermovoltage and voltage measurements. The system may be automated with a feedback loop.

  13. Microwave-induced co-tunneling in single electron tunneling transistors

    DEFF Research Database (Denmark)

    Ejrnaes, M.; Savolainen, M.; Manscher, M.

    2002-01-01

    on rubber bellows. Cross-talk was minimized by using individual coaxial lines between the sample and the room temperature electronics: The co-tunneling experiments were performed at zero DC bias current by measuring the voltage response to a very small amplitude 2 Hz current modulation with the gate voltage......The influence of microwaves on the co-tunneling in single electron tunneling transistors has been investigated as function of frequency and power in the temperature range from 150 to 500 mK. All 20 low frequency connections and the RF line were filtered, and the whole cryostat was suspended...

  14. Electronic thermometry in tunable tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Maksymovych, Petro

    2016-03-15

    A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

  15. Tunnel magnetoresistance of magnetic molecules with spin-vibron coupling

    Directory of Open Access Journals (Sweden)

    Ahmed Kenawy

    2017-05-01

    Full Text Available The effect of molecular vibrations on the tunnel magnetoresistance (TMR of a magnetic tunnel junction with a single spin-anisotropic molecule interconnecting its electrodes is investigated theoretically. We demonstrate that if these vibrations couple at the same time to the charge of tunneling electrons and to the spin of the molecule, the spin anisotropy of such a molecule becomes enhanced. This has, in turn, a profound impact on the TMR of such a device showing that molecular vibrations lead to a significant change of spin-polarized transport, differing for the parallel and antiparallel magnetic configuration of the junction.

  16. A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics

    International Nuclear Information System (INIS)

    Lü Yuan-Jie; Lin Zhao-Jun; Yu Ying-Xia; Meng Ling-Guo; Cao Zhi-Fang; Luan Chong-Biao; Wang Zhan-Guo

    2012-01-01

    An Ni Schottky contact on the AlGaN/GaN heterostructure is fabricated. The flat-band voltage for the Schottky contact on the AlGaN/GaN heterostructure is obtained from the forward current—voltage characteristics. With the measured capacitance—voltage curve and the flat-band voltage, the polarization charge density in the AlGaN/GaN heterostructure is investigated, and a simple formula for calculating the polarization charge density is obtained and analyzed. With the approach described in this paper, the obtained polarization charge density agrees well with the one calculated by self-consistently solving Schrodinger's and Poisson's equations

  17. Ferroelectric tunneling element and memory applications which utilize the tunneling element

    Science.gov (United States)

    Kalinin, Sergei V [Knoxville, TN; Christen, Hans M [Knoxville, TN; Baddorf, Arthur P [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

    2010-07-20

    A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

  18. Homoepitaxial graphene tunnel barriers for spin transport

    Directory of Open Access Journals (Sweden)

    Adam L. Friedman

    2016-05-01

    Full Text Available Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

  19. Trajectories and traversal times in quantum tunneling

    International Nuclear Information System (INIS)

    Huang, Zhi Hong.

    1989-01-01

    The classical concepts of trajectories and traversal times applied to quantum tunneling are discussed. By using the Wentzel-Kramers-Brillouin approximation, it is found that in a forbidden region of a multidimensional space the wave function can be described by two sets of trajectories, or equivalently by two sets of wave fronts. The trajectories belonging to different sets are mutually orthogonal. An extended Huygens construction is proposed to determine these wave fronts and trajectories. In contrast to the classical results in the allowed region, these trajectories couple to each other. However, if the incident wave is normal to the turning surface, the trajectories are found to be independent and can be determined by Newton's equations of motion with inverted potential and energy. The multidimensional tunneling theory is then applied to the scanning tunneling microscope to calculate the current density distribution and to derive the expressions for the lateral resolution and the surface corrugation amplitude. The traversal time in quantum tunneling, i.e. tunneling time, is found to depend on model calculations and simulations. Computer simulation of a wave packet tunneling through a square barrier is performed. Several approaches, including the phase method, Larmor clock, and time-dependent barrier model, are investigated. For a square barrier, two characteristic times are found: One is equal to the barrier width divided by the magnitude of the imaginary velocity; the other is equal to the decay length divided by the incident velocity. It is believed that the tunneling time can only be defined operationally

  20. About tunnelling times

    International Nuclear Information System (INIS)

    Olkhovsky, V.S.; Recami, E.

    1991-08-01

    In this paper, first we critically analyse the main theoretical definitions and calculations of the sub-barrier tunnelling and reflection times. Secondly, we propose a new, physically sensible definition of such durations, on the basis of a recent general formalism (already tested for other types of quantum collisions). At last, we discuss some results regarding temporal evolution of the tunnelling processes, and in particular the ''particle'' speed during tunnelling. (author). 36 refs, 1 fig

  1. Microsystem Aeromechanics Wind Tunnel

    Data.gov (United States)

    Federal Laboratory Consortium — The Microsystem Aeromechanics Wind Tunnel advances the study of fundamental flow physics relevant to micro air vehicle (MAV) flight and assesses vehicle performance...

  2. InAs/Si Hetero-Junction Nanotube Tunnel Transistors

    OpenAIRE

    Hanna, Amir N.; Fahad, Hossain M.; Hussain, Muhammad M.

    2015-01-01

    Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ?ON? state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunnel...

  3. Current-use pesticides in seawater and their bioaccumulation in polar bear-ringed seal food chains of the Canadian Arctic.

    Science.gov (United States)

    Morris, Adam D; Muir, Derek C G; Solomon, Keith R; Letcher, Robert J; McKinney, Melissa A; Fisk, Aaron T; McMeans, Bailey C; Tomy, Gregg T; Teixeira, Camilla; Wang, Xiaowa; Duric, Mark

    2016-07-01

    The distribution of current-use pesticides (CUPs) in seawater and their trophodynamics were investigated in 3 Canadian Arctic marine food chains. The greatest ranges of dissolved-phase concentrations in seawater for each CUP were endosulfan sulfate (less than method detection limit (MDL) to 19 pg L(-1) ) > dacthal (0.76-15 pg L(-1) ) > chlorpyrifos (less than MDL to 8.1 pg L(-1) ) > pentachloronitrobenzene (less than MDL to 2.6 pg L(-1) ) > α-endosulfan (0.20-2.3 pg L(-1) ). Bioaccumulation factors (BAFs, water-respiring organisms) were greatest in plankton, including chlorothalonil (log BAF = 7.4 ± 7.1 L kg(-1) , mean ± standard error), chlorpyrifos (log BAF = 6.9 ± 6.7 L kg(-1) ), and α-endosulfan (log BAF = 6.5 ± 6.0 L kg(-1) ). The largest biomagnification factors (BMFs) were found for dacthal in the capelin:plankton trophic relationship (BMF = 13 ± 5.0) at Cumberland Sound (Nunvavut), and for β-endosulfan (BMF = 16 ± 4.9) and α-endosulfan (BMF = 9.3 ± 2.8) in the polar bear-ringed seal relationship at Barrow and Rae Strait (NU), respectively. Concentrations of endosulfan sulfate exhibited trophic magnification (increasing concentrations with increasing trophic level) in the poikilothermic portion of the food web (trophic magnification factor = 1.4), but all of the CUPs underwent trophic dilution in the marine mammal food web, despite some trophic level-specific biomagnification. Together, these observations are most likely indicative of metabolism of these CUPs in mammals. Environ Toxicol Chem 2016;35:1695-1707. © 2016 SETAC. © 2016 SETAC.

  4. Studies on polar high-speed counter-current chromatographic systems in separation of amaranthine-type betacyanins from Celosia species.

    Science.gov (United States)

    Spórna-Kucab, Aneta; Milo, Angelika; Kumorkiewicz, Agnieszka; Wybraniec, Sławomir

    2018-01-15

    Betacyanins, natural plant pigments exhibiting antioxidant and chemopreventive properties, were extracted from Celosia spicata (Thouars) Spreng. inflorescences and separated by high-speed counter-current chromatography (HSCCC) in two polar solvent systems composed of: TBME - 1-BuOH - ACN - H 2 O (0.7% HFBA, 2:2:1:5, v/v/v/v) (system I) and EtOH - ACN - 1-PrOH - (NH 4 ) 2 SO 4satd.soln - H 2 O (0.5:0.5:0.5:1.2:1, v/v/v/v/v) (system II). The systems were used in the head-to-tail (system I) and tail-to-head (system II) mode. The flow rate of the mobile phase was 2.0 ml/min and the column rotation speed was 860 rpm. The retention of the stationary phase was 73.5% (system I) and 80.0% (system II). For the identification of separated betacyanins in the crude extract as well as in the HSCCC fractions, LC-DAD-ESI-MS/MS analyses were performed. Depending on the target compounds, each of the systems exhibit meaningfully different selectivity and applicability. For the pairs of amaranthines (1/1') and betanins (2/2'), the best choice is the system II, but the acylated amaranthine pairs (3/3' and 4/4') can be resolved only in the ion-pair system I. For the indication of the most suitable solvent system for Celosia plumosa hort., Celosia cristata L. and Celosia spicata (Thouars) Spreng. species, the profiles of betacyanins in different plant parts were studied. Copyright © 2017. Published by Elsevier B.V.

  5. Organic high ionic strength aqueous two-phase solvent system series for separation of ultra-polar compounds by spiral high-speed counter-current chromatography

    Science.gov (United States)

    Zeng, Yun; Liu, Gang; Ma, Ying; Chen, Xiaoyuan; Ito, Yoichiro

    2011-01-01

    Existing two-phase solvent systems for high-speed countercurrent chromatography cover the separation of hydrophobic to moderately polar compounds, but often fail to provide suitable partition coefficient values for highly polar compounds such as sulfonic acids, catecholamines and zwitter ions. The present paper introduces a new solvent series which can be applied for the separation of these polar compounds. It is composed of 1-butanol, ethanol, saturated ammonium sulfate and water at various volume ratios and consists of a series of 10 steps which are arranged according to the polarity of the solvent system so that the two-phase solvent system with suitable K values for the target compound(s) can be found in a few steps. Each solvent system gives proper volume ratio and high density difference between the two phases to provide a satisfactory level of retention of the stationary phase in the spiral column assembly. The method is validated by partition coefficient measurement of four typical polar compounds including methyl green (basic dye), tartrazine (sulfonic acid), tyrosine (zwitter ion) and epinephrine (a catecholamine), all of which show low partition coefficient values in the polar 1-butanol-water system. The capability of the method is demonstrated by separation of three catecholamines. PMID:22033108

  6. Measuring voltage transients with an ultrafast scanning tunneling microscope

    DEFF Research Database (Denmark)

    Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1997-01-01

    We use an ultrafast scanning tunneling microscope to resolve propagating voltage transients in space and time. We demonstrate that the previously observed dependence of the transient signal amplitude on the tunneling resistance was only caused by the electrical sampling circuit. With a modified c......-gating photoconductive switch with a rigidly attached fiber, the probe is scanned without changing the probe characteristics. (C) 1997 American Institute of Physics.......We use an ultrafast scanning tunneling microscope to resolve propagating voltage transients in space and time. We demonstrate that the previously observed dependence of the transient signal amplitude on the tunneling resistance was only caused by the electrical sampling circuit. With a modified...... circuit, where the tunneling tip is directly connected to the current amplifier of the scanning tunneling microscope, this dependence is eliminated. Ail results can be explained with coupling through the geometrical capacitance of the tip-electrode junction. By illuminating the current...

  7. Quantum Tunneling of Magnetization in Single Molecular Magnets Coupled to Ferromagnetic Reservoirs

    OpenAIRE

    Misiorny, Maciej; Barnas, Józef

    2006-01-01

    The role of spin polarized reservoirs in quantum tunneling of magnetization and relaxation processes in a single molecular magnet (SMM) is investigated theoretically. The SMM is exchange-coupled to the reservoirs and also subjected to a magnetic field varying in time, which enables the quantum tunneling of magnetization (QTM). The spin relaxation times are calculated from the Fermi golden rule. The exchange interaction with tunneling electrons is shown to affect the spin reversal due to QTM. ...

  8. Magnetic tunnel junctions with Co:TiO2 magnetic semiconductor electrodes

    NARCIS (Netherlands)

    Lee, Y.J.; Abhishek Kumar, A.K.; Kumar, A.; Vera Marun, I.J.; de Jong, Machiel Pieter; Jansen, R.

    2010-01-01

    Spin-polarized tunneling is investigated in magnetic tunnel junctions containing an ultrathin interfacial layer of Co:TiO2 magnetic semiconductor. The Co:TiO2 layers (0 to 1 nm thick) are inserted at the SrTiO3/Co interface in La0.67Sr0.33MnO3/SrTiO3/Co tunnel junctions. For all junctions we find a

  9. TBM tunneling on the Yucca Mountain Project

    International Nuclear Information System (INIS)

    Morris, J.P.; Hansmire, W.H.

    1995-01-01

    The US Department of Energy's (DOE) Yucca Mountain Project (YMP) is a scientific endeavor to determine the suitability of Yucca Mountain for the first long-term, high-level nuclear waste repository in the United States. The current status of this long-term project from the construction perspective is described. A key element is construction of the Exploratory Studies Facility (ESF) Tunnel, which is being excavated with a 7.6 m (25 ft) diameter tunnel boring machine (TBM). Development of the ESF may include the excavation of over 15 km (9.3 mi) of tunnel varying in size from 3.0 to 7.6 m (10 to 25 ft). Prior to construction, extensive constructability reviews were an interactive part of the final design. The intent was to establish a constructable design that met the long-term stability requirements for radiological safety of a future repository, while maintaining flexibility for the scientific investigations and acceptable tunneling productivity

  10. High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed.

    Science.gov (United States)

    Renard, Charles; Molière, Timothée; Cherkashin, Nikolay; Alvarez, José; Vincent, Laetitia; Jaffré, Alexandre; Hallais, Géraldine; Connolly, James Patrick; Mencaraglia, Denis; Bouchier, Daniel

    2016-05-04

    Interest in the heteroepitaxy of GaAs on Si has never failed in the last years due to the potential for monolithic integration of GaAs-based devices with Si integrated circuits. But in spite of this effort, devices fabricated from them still use homo-epitaxy only. Here we present an epitaxial technique based on the epitaxial lateral overgrowth of micrometer scale GaAs crystals on a thin SiO2 layer from nanoscale Si seeds. This method permits the integration of high quality and defect-free crystalline GaAs on Si substrate and provides active GaAs/Si heterojunctions with efficient carrier transport through the thin SiO2 layer. The nucleation from small width openings avoids the emission of misfit dislocations and the formation of antiphase domains. With this method, we have experimentally demonstrated for the first time a monolithically integrated GaAs/Si diode with high current densities of 10 kA.cm(-2) for a forward bias of 3.7 V. This epitaxial technique paves the way to hybrid III-V/Si devices that are free from lattice-matching restrictions, and where silicon not only behaves as a substrate but also as an active medium.

  11. Multiterminal semiconductor/ferromagnet probes for spin-filter scanning tunneling microscopy

    NARCIS (Netherlands)

    Vera Marun, I.J.; Jansen, R.

    2009-01-01

    We describe the fabrication of multiterminal semiconductor/ferromagnet probes for a new technique to study magnetic nanostructures: spin-filter scanning tunneling microscopy. We describe the principle of the technique, which is based on spin-polarized tunneling and subsequent analysis of the spin

  12. 'Al' concentration on spin-dependent resonant tunnelling in InAs/Ga

    Indian Academy of Sciences (India)

    The separation between spin-up and spin-down components, barrier transparency, polarization efficiency and tunnelling lifetime were calculated using the transfer matrix approach. The separation between spin-up and spin-down resonances and tunnelling lifetime were reportedfor the first time in the case of InAs/Ga 1 − y ...

  13. Scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Binnig, G.; Rohrer, H.

    1983-01-01

    Based on vacuum tunneling, a novel type of microscope, the scanning tunneling microscope (STM) was developed. It has an unprecedented resolution in real space on an atomic scale. The authors review the important technical features, illustrate the power of the STM for surface topographies and discuss its potential in other areas of science and technology. (Auth.)

  14. Electron tunneling in chemistry

    International Nuclear Information System (INIS)

    Zamaraev, K.I.; Khajrutdinov, R.F.; Zhdanov, V.P.; Molin, Yu.N.

    1985-01-01

    Results of experimental and theoretical investigations are outlined systematically on electron tunnelling in chemical reactions. Mechanism of electron transport to great distances is shown to be characteristic to chemical compounds of a wide range. The function of tunnel reactions is discussed for various fields of chemistry, including radiation chemistry, electrochemistry, chemistry of solids, chemistry of surface and catalysis

  15. Tunnel fire dynamics

    CERN Document Server

    Ingason, Haukur; Lönnermark, Anders

    2015-01-01

    This book covers a wide range of issues in fire safety engineering in tunnels, describes the phenomena related to tunnel fire dynamics, presents state-of-the-art research, and gives detailed solutions to these major issues. Examples for calculations are provided. The aim is to significantly improve the understanding of fire safety engineering in tunnels. Chapters on fuel and ventilation control, combustion products, gas temperatures, heat fluxes, smoke stratification, visibility, tenability, design fire curves, heat release, fire suppression and detection, CFD modeling, and scaling techniques all equip readers to create their own fire safety plans for tunnels. This book should be purchased by any engineer or public official with responsibility for tunnels. It would also be of interest to many fire protection engineers as an application of evolving technical principles of fire safety.

  16. High-Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    2010-01-01

    We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27...

  17. Effects of Transverse Magnetic Anisotropy on Current-Induced Spin Switching

    OpenAIRE

    Misiorny, Maciej; Barnaś, Józef

    2013-01-01

    Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse anisotropy on transport characteristics and the adatom's/SMM's spin. In particular, we analyze the role of quantum tunneling of magnetization (QTM) in the mechanism of the current-induced spin switching, and show that the QTM phenomenon becomes revealed as resonan...

  18. Spin-polarized spin excitation spectroscopy

    International Nuclear Information System (INIS)

    Loth, Sebastian; Lutz, Christopher P; Heinrich, Andreas J

    2010-01-01

    We report on the spin dependence of elastic and inelastic electron tunneling through transition metal atoms. Mn, Fe and Cu atoms were deposited onto a monolayer of Cu 2 N on Cu(100) and individually addressed with the probe tip of a scanning tunneling microscope. Electrons tunneling between the tip and the substrate exchange energy and spin angular momentum with the surface-bound magnetic atoms. The conservation of energy during the tunneling process results in a distinct onset threshold voltage above which the tunneling electrons create spin excitations in the Mn and Fe atoms. Here we show that the additional conservation of spin angular momentum leads to different cross-sections for spin excitations depending on the relative alignment of the surface spin and the spin of the tunneling electron. For this purpose, we developed a technique for measuring the same local spin with a spin-polarized and a non-spin-polarized tip by exchanging the last apex atom of the probe tip between different transition metal atoms. We derive a quantitative model describing the observed excitation cross-sections on the basis of an exchange scattering process.

  19. Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

    Science.gov (United States)

    Wang, Jing; Huang, Qikun; Shi, Peng; Zhang, Kun; Tian, Yufeng; Yan, Shishen; Chen, Yanxue; Liu, Guolei; Kang, Shishou; Mei, Liangmo

    2017-10-26

    The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

  20. Polarization developments

    International Nuclear Information System (INIS)

    Prescott, C.Y.

    1993-07-01

    Recent developments in laser-driven photoemission sources of polarized electrons have made prospects for highly polarized electron beams in a future linear collider very promising. This talk discusses the experiences with the SLC polarized electron source, the recent progress with research into gallium arsenide and strained gallium arsenide as a photocathode material, and the suitability of these cathode materials for a future linear collider based on the parameters of the several linear collider designs that exist

  1. Polar localization of plasma membrane Ca2+/Mg2+ ATPase correlates with the pattern of steady ionic currents in eggs of Lymnaea stagnalis and Bithynia tentaculata (Mollusca)

    NARCIS (Netherlands)

    D. Zivkovic (Dana); R. Créton (Robbert); G. Zwaan (Gideon); W.C. de Bruijn (Wim); M.R. Dohmen (M.René)

    1990-01-01

    textabstractDuring extrusion of the first polar body in eggs of Lymnaea stagnalis and Bithynia tentaculata a localized Ca2+ /Mg2+ ATPase activity was detected, using Ando's enzyme-cytochemical method for electron microscopy [Ando et al. (1981) Acta Histochem Cytochem 14:705-726]. The enzyme activity

  2. Ionization in elliptically polarized pulses: Multielectron polarization effects and asymmetry of photoelectron momentum distributions

    DEFF Research Database (Denmark)

    Shvetsov-Shilovskiy, Nikolay; Dimitrovski, Darko; Madsen, Lars Bojer

    2012-01-01

    In the tunneling regime we present a semiclassical model of above-threshold ionization with inclusion of the Stark shift of the initial state, the Coulomb potential, and a polarization induced dipole potential. The model is used for the investigation of the photoelectron momentum distributions...... in close to circularly polarized light, and it is validated by comparison with ab initio results and experiments. The momentum distributions are shown to be highly sensitive to the tunneling exit point, the Coulomb force, and the dipole potential from the induced dipole in the atomic core...

  3. General risks for tunnelling projects: An overview

    Science.gov (United States)

    Siang, Lee Yong; Ghazali, Farid E. Mohamed; Zainun, Noor Yasmin; Ali, Roslinda

    2017-10-01

    Tunnels are indispensable when installing new infrastructure as well as when enhancing the quality of existing urban living due to their unique characteristics and potential applications. Over the past few decades, there has been a significant increase in the building of tunnels, world-wide. Tunnelling projects are complex endeavors, and risk assessment for tunnelling projects is likewise a complex process. Risk events are often interrelated. Occurrence of a technical risk usually carries cost and schedule consequences. Schedule risks typically impact cost escalation and project overhead. One must carefully consider the likelihood of a risk's occurrence and its impact in the context of a specific set of project conditions and circumstances. A project's goals, organization, and environment impacts in the context of a specific set of project conditions and circumstances. Some projects are primarily schedule driven; other projects are primarily cost or quality driven. Whether a specific risk event is perceived fundamentally as a cost risk or a schedule risk is governed by the project-specific context. Many researchers have pointed out the significance of recognition and control of the complexity, and risks of tunnelling projects. Although all general information on a project such as estimated duration, estimated cost, and stakeholders can be obtained, it is still quite difficult to accurately understand, predict and control the overall situation and development trends of the project, leading to the risks of tunnelling projects. This paper reviews all the key risks for tunnelling projects from several case studies that have been carried out by other researchers. These risks have been identified and reviewed in this paper. As a result, the current risk management plan in tunnelling projects can be enhanced by including all these reviewed risks as key information.

  4. Nanowire Tunnel Field Effect Transistors: Prospects and Pitfalls

    OpenAIRE

    Sylvia, Somaia Sarwat

    2014-01-01

    The tunnel field effect transistor (TFET) has the potential to operate at lower voltages and lower power than the field effect transistor (FET). The TFET can circumvent the fundamental thermal limit of the inverse subthreshold slope (S) by exploiting interband tunneling of non-equilibrium "cold" carriers. The conduction mechanism in the TFET is governed by band-to-band tunneling which limits the drive current. TFETs built with III-V materials like InAs and InSb can produce enough tunneling cu...

  5. Dielectric breakdown in AlO{sub x} tunnelling barriers

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, D M; Carara, M; Schelp, L F; Dorneles, L S [Universidade Federal de Santa Maria, Departamento de Fisica, Av. Roraima, 1000, Santa Maria 97105-900, RS (Brazil); Fichtner, P F P, E-mail: lsdorneles@gmail.com [Universidade Federal do Rio Grande do Sul, Instituto de Fisica, Av. Bento Goncalves, 9500, Caixa Postal 15051, Porto Alegre 91501-970, RS (Brazil)

    2011-04-06

    We studied the dielectric breakdown in tunnelling barriers produced by plasma-assisted oxidation of an aluminium surface. The barrier mean height, thickness and the effective tunnelling area were extracted from current versus voltage curves measured at room temperature. The effective tunnelling area ranged from 10{sup -10} to 10{sup -5} cm{sup 2}, corresponding to less than 1% of the geometrical surface of the samples. The estimated electrical field to breakdown agreed with predictions from thermochemical models, and decreased exponentially with the effective tunnelling area.

  6. Tunnel current across linear homocatenated germanium chains

    International Nuclear Information System (INIS)

    Matsuura, Yukihito

    2014-01-01

    The electronic transport properties of germanium oligomers catenating into linear chains (linear Ge chains) have been theoretically studied using first principle methods. The conduction mechanism of a Ge chain sandwiched between gold electrodes was analyzed based on the density of states and the eigenstates of the molecule in a two-probe environment. Like that of silicon chains (Si chains), the highest occupied molecular orbital of Ge chains contains the extended σ-conjugation of Ge 4p orbitals at energy levels close to the Fermi level; this is in contrast to the electronic properties of linear carbon chains. Furthermore, the conductance of a Ge chain is expected to decrease exponentially with molecular length L. The decay constant β, which is defined as e −βL , of a Ge chain is similar to that of a Si chain, whereas the conductance of the Ge chains is higher than that of Si chains even though the Ge–Ge bond length is longer than the Si–Si bond length

  7. Tunnels: different construction methods and its use for pipelines installation

    Energy Technology Data Exchange (ETDEWEB)

    Mattos, Tales; Soares, Ana Cecilia; Assis, Slow de; Bolsonaro, Ralfo; Sanandres, Simon [Petroleo do Brasil S.A. (PETROBRAS), Rio de Janeiro, RJ (Brazil)

    2009-07-01

    In a continental dimensions country like Brazil, the pipeline modal faces the challenge of opening ROW's in the most different kind of soils with the most different geomorphology. To safely fulfill the pipeline construction demand, the ROW opening uses all techniques in earthworks and route definition and, where is necessary, no digging techniques like horizontal directional drilling, micro tunneling and also full size tunnels design for pipelines installation in high topography terrains to avoid geotechnical risks. PETROBRAS has already used the tunnel technique to cross higher terrains with great construction difficult, and mainly to make it pipeline maintenance and operation easier. For the GASBOL Project, in Aparados da Serra region and in GASYRG, in Bolivia, two tunnels were opened with approximately 700 meters and 2,000 meters each one. The GASBOL Project had the particularity of being a gallery with only one excavation face, finishing under the hill and from this point was drilled a vertical shaft was drilled until the top to install the pipeline section, while in GASYRG Project the tunnel had two excavation faces. Currently, two projects are under development with tunnels, one of then is the Caraguatatuba-Taubate gas pipeline (GASTAU), with a 5 km tunnel, with the same concepts of the GASBOL tunnel, with a gallery to be opened with the use of a TBM (Tunneling Boring Machine), and a shaft to the surface, and the gas pipeline Cabiunas-Reduc III (GASDUC III) project is under construction with a 3.7 km tunnel, like the GASYRG tunnel with two faces. This paper presents the main excavation tunneling methods, conventional and mechanized, presenting the most relevant characteristics from both and, in particular, the use of tunnels for pipelines installation. (author)

  8. Behaviour of tunnelling transition rate of argon atom exposed to ...

    Indian Academy of Sciences (India)

    physics pp. 565–573. Behaviour of tunnelling transition rate of argon atom exposed to strong low-frequency elliptical laser field. TATJANA B MILADINOVI ´C and VIOLETA M ... There are two laser field polarizations, linear and circular, as ... is the electron momentum [1], expressed using the field strength F and the parabolic.

  9. Numerical modelling of air movement in road tunnels

    International Nuclear Information System (INIS)

    Kashef, A.; Benichou, N.; Lougheed, G. . E-mail; Debs, A.

    2003-01-01

    The objective of the Mechanical Ventilation Systems (MVS) in highway tunnels is to provide tunnel patrons with a reasonable degree of comfort during normal operation and to assist in keeping tunnels safe during emergencies. Temperature, humidity, and air velocity are among the parameters that determine the tunnel environment and indicate the level of MVS performance. To investigate the performance of the current emergency ventilation strategies for an existing tunnel system in the event of a fire, a research project is being conducted at the National Research Council of Canada. The primary objectives of the study are: a) to assess and validate the ability of in-place emergency ventilation strategies to control smoke spread and minimize the impact of smoke on tunnel users; and b) to recommend guidelines for improving ventilation operation to maximize intervention effectiveness. This will allow future development of an intelligent ventilation system based on a pre-established scenario of ventilation activated using automatic fire detection. The research study includes two phases, numerical and experimental phases. The numerical phase will use a CFD model (Solvent) to study smoke ventilation in the tunnel. The experimental phase will be used to calibrate and validate the CFD model and to establish the boundary conditions for the numerical model. Solvent was used to model a ventilation scenario using existing data. The current paper presents the initial efforts to validate the CFD model against onsite flow measurements conducted in the tunnel. The CFD model included aerodynamically significant physical features of the tunnel. (author)

  10. Floating frame grounding system. [for wind tunnel static force measurement

    Science.gov (United States)

    Forsyth, T. J.

    1987-01-01

    The development of a floating frame grounding system (FFGS) for the 40- by 80-foot low speed wind tunnel facility at the NASA Ames Research Center National Full Scale Aerodynamics Complex is addresssed. When electrical faults are detected, the FFGS ensures a ground path for the fault current. In addition, the FFGS alerts the tunnel operator when a mechanical foul occurs.

  11. Reinventing the PN Junction: Dimensionality Effects on Tunneling Switches

    Science.gov (United States)

    2012-05-11

    model is given in [5]. In this paper the simulator Medici was used to model the tunneling current. The tunneling model in Medici does not account...the requirement for phonons [23] Figure 2.2: The ID-VG characteristics of the silicided source TFET shown above fit well with a Medici model that

  12. An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

    Science.gov (United States)

    De Michielis, L.; Daǧtekin, N.; Biswas, A.; Lattanzio, L.; Selmi, L.; Luisier, M.; Riel, H.; Ionescu, A. M.

    2013-09-01

    In this paper, an analytical band-to-band tunneling model is proposed, validated by means of drift-diffusion simulation and comparison with experimental data, implemented in Verilog-A, and finally proven with SPICE simulator through simulation of circuits featuring tunneling diodes. The p-n junction current calculation starts from a non-local Band-to-Band tunneling theory including the electron-phonon interaction and therefore it is particularly suited for indirect semiconductor materials such as silicon- or germanium-based interband tunneling devices.

  13. Experience in design and construction of the Log tunnel

    Directory of Open Access Journals (Sweden)

    Jovičić Vojkan

    2017-09-01

    Full Text Available A twin highway Log tunnel is a part of a new motorway connection between Maribor and Zagreb, section Draženci-Gruškovje, which is located towards the border crossing between Slovenia and Croatia. The tunnel is currently under construction, and only the excavation works have been completed during the writing of this paper. The terrain in the area of the Log tunnel is diverse, and the route of the highway in its vicinity is characterised by deep excavations, bridges or viaducts. The Log tunnel is approximately 250 m long, partly constructed as a gallery. The geological conditions are dominated by Miocene base rock, featuring layers of well-connected clastic rocks, which are covered by diluvium clays, silts, sands and gravels of different thicknesses. Due to the short length of the tunnel, the usual separation of the motorway route to the left and the right tunnel axes was not carried out. Thus, the tunnel was constructed with an intermediate pillar and was designed as a three-lane tunnel, including the stopping lane. The construction of the tunnel was carried out using the New Austrian tunnelling method (NATM, in which the central adit was excavated first and the intermediate pillar was constructed within it. The excavation of the main tubes followed and was divided into the top heading, bench and the invert, enabling the intermediate pillar to take the load off the top heading of both tubes. The secondary lining of the tunnel is currently under construction. The experience of the tunnel construction gathered so far is presented in the paper. The main emphasis is on the construction of the intermediate pillar, which had to take the significant and asymmetrical ground load.

  14. Polarization, political

    NARCIS (Netherlands)

    Wojcieszak, M.; Mazzoleni, G.; Barnhurst, K.G.; Ikeda, K.; Maia, R.C.M.; Wessler, H.

    2015-01-01

    Polarization has been studied in three different forms: on a social, group, and individual level. This entry first focuses on the undisputed phenomenon of elite polarization (i.e., increasing adherence of policy positions among the elites) and also outlines different approaches to assessing mass

  15. Wind Tunnel Facility

    Data.gov (United States)

    Federal Laboratory Consortium — This ARDEC facility consists of subsonic, transonic, and supersonic wind tunnels to acquire aerodynamic data. Full-scale and sub-scale models of munitions are fitted...

  16. Quantum tunneling with friction

    Science.gov (United States)

    Tokieda, M.; Hagino, K.

    2017-05-01

    Using the phenomenological quantum friction models introduced by P. Caldirola [Nuovo Cimento 18, 393 (1941), 10.1007/BF02960144] and E. Kanai [Prog. Theor. Phys. 3, 440 (1948), 10.1143/ptp/3.4.440], M. D. Kostin [J. Chem. Phys. 57, 3589 (1972), 10.1063/1.1678812], and K. Albrecht [Phys. Lett. B 56, 127 (1975), 10.1016/0370-2693(75)90283-X], we study quantum tunneling of a one-dimensional potential in the presence of energy dissipation. To this end, we calculate the tunneling probability using a time-dependent wave-packet method. The friction reduces the tunneling probability. We show that the three models provide similar penetrabilities to each other, among which the Caldirola-Kanai model requires the least numerical effort. We also discuss the effect of energy dissipation on quantum tunneling in terms of barrier distributions.

  17. INCAS TRISONIC WIND TUNNEL

    Directory of Open Access Journals (Sweden)

    Florin MUNTEANU

    2009-09-01

    Full Text Available The 1.2 m x 1.2 m Trisonic Blowdown Wind Tunnel is the largest of the experimental facilities at the National Institute for Aerospace Research - I.N.C.A.S. "Elie Carafoli", Bucharest, Romania. The tunnel has been designed by the Canadian company DSMA (now AIOLOS and since its commissioning in 1978 has performed high speed aerodynamic tests for more than 120 projects of aircraft, missiles and other objects among which the twin jet fighter IAR-93, the jet trainer IAR-99, the MIG-21 Lancer, the Polish jet fighter YRYDA and others. In the last years the wind tunnel has been used mostly for experimental research in European projects such as UFAST. The high flow quality parameters and the wide range of testing capabilities ensure the competitivity of the tunnel at an international level.

  18. Water Tunnel Facility

    Data.gov (United States)

    Federal Laboratory Consortium — NETL’s High-Pressure Water Tunnel Facility in Pittsburgh, PA, re-creates the conditions found 3,000 meters beneath the ocean’s surface, allowing scientists to study...

  19. Phenomenological theory of current-producing processes at the solid oxide electrolyte/gas electrode interface: steady-state polarization of fuel-cell electrodes

    International Nuclear Information System (INIS)

    Murygin, I.V.; Chebotin, V.N.

    1979-01-01

    The polarization of fuel-cell electrodes (mixtures CO + CO 2 and H 2 + H 2 O) in systems with solid oxide electrolytes is discussed. The theory is based upon a process model where the electrode reaction zone can spread along the line of three-phase contact by diffusion of reaction partners and products across the electrolyte/electrode and electrolyte/gas interface

  20. Monophasic Pulsed 200-μA Current Promotes Galvanotaxis With Polarization of Actin Filament and Integrin α2β1 in Human Dermal Fibroblasts.

    Science.gov (United States)

    Uemura, Mikiko; Maeshige, Noriaki; Koga, Yuka; Ishikawa-Aoyama, Michiko; Miyoshi, Makoto; Sugimoto, Masaharu; Terashi, Hiroto; Usami, Makoto

    2016-01-01

    The monophasic pulsed microcurrent is used to promote wound healing, and galvanotaxis regulation has been reported as one of the active mechanisms in the promotion of tissue repair with monophasic pulsed microcurrent. However, the optimum monophasic pulsed microcurrent parameters and intracellular changes caused by the monophasic pulsed microcurrent have not been elucidated in human dermal fibroblasts. The purpose of this study was to investigate the optimum intensity for promoting galvanotaxis and the effects of electrical stimulation on integrin α2β1 and actin filaments in human dermal fibroblasts. Human dermal fibroblasts were treated with the monophasic pulsed microcurrent of 0, 100, 200, or 300 μA for 8 hours, and cell migration and cell viability were measured 24 hours after starting monophasic pulsed microcurrent stimulation. Polarization of integrin α2β1 and lamellipodia formation were detected by immunofluorescent staining 10 minutes after starting monophasic pulsed microcurrent stimulation. The migration toward the cathode was significantly higher in the cells treated with the 200-μA monophasic pulsed microcurrent than in the controls (P microcurrent did not alter the migration ratio. The electrostimulus of 200 μA also promoted integrin α2β1 polarization and lamellipodia formation at the cathode edge (P microcurrent intensity to promote migration toward the cathode, and this intensity could regulate polarization of migration-related intracellular factors in human dermal fibroblasts.

  1. The Beginner's Guide to Wind Tunnels with TunnelSim and TunnelSys

    Science.gov (United States)

    Benson, Thomas J.; Galica, Carol A.; Vila, Anthony J.

    2010-01-01

    The Beginner's Guide to Wind Tunnels is a Web-based, on-line textbook that explains and demonstrates the history, physics, and mathematics involved with wind tunnels and wind tunnel testing. The Web site contains several interactive computer programs to demonstrate scientific principles. TunnelSim is an interactive, educational computer program that demonstrates basic wind tunnel design and operation. TunnelSim is a Java (Sun Microsystems Inc.) applet that solves the continuity and Bernoulli equations to determine the velocity and pressure throughout a tunnel design. TunnelSys is a group of Java applications that mimic wind tunnel testing techniques. Using TunnelSys, a team of students designs, tests, and post-processes the data for a virtual, low speed, and aircraft wing.

  2. Nanowire Tunnel Field Effect Transistors: Prospects and Pitfalls

    Science.gov (United States)

    Sylvia, Somaia Sarwat

    The tunnel field effect transistor (TFET) has the potential to operate at lower voltages and lower power than the field effect transistor (FET). The TFET can circumvent the fundamental thermal limit of the inverse subthreshold slope (S) by exploiting interband tunneling of non-equilibrium "cold" carriers. The conduction mechanism in the TFET is governed by band-to-band tunneling which limits the drive current. TFETs built with III-V materials like InAs and InSb can produce enough tunneling current because of their small direct bandgap. Our simulation results show that although they require highly degenerate source doping to support the high electric fields in the tunnel region, the devices achieve minimum inverse subthreshold slopes of 30 mV/dec. In subthreshold, these devices experience both regimes of voltage-controlled tunneling and cold-carrier injection. Numerical results based on a discretized 8-band k.p model are compared to analytical WKB theory. For both regular FETs and TFETs, direct channel tunneling dominates the leakage current when the physical gate length is reduced to 5 nm. Therefore, a survey of materials is performed to determine their ability to suppress the direct tunnel current through a 5 nm barrier. The tunneling effective mass gives the best indication of the relative size of the tunnel currents. Si gives the lowest overall tunnel current for both the conduction and valence band and, therefore, it is the optimum choice for suppressing tunnel current at the 5 nm scale. Our numerical simulation shows that the finite number, random placement, and discrete nature of the dopants in the source of an InAs nanowire (NW) TFET affect both the mean value and the variance of the drive current and the inverse subthreshold slope. The discrete doping model gives an average drive current and an inverse subthreshold slope that are less than those predicted from the homogeneous doping model. The doping density required to achieve a target drive current is

  3. Keyholes in MIMO-OFDM: Train-to-Wayside Communications in Railway Tunnels

    Directory of Open Access Journals (Sweden)

    Juan Moreno García-Loygorri

    2017-01-01

    Full Text Available One of the key challenges in railway engineering is how to provide passengers an efficient, secure, and safe service. To achieve this, operators and stakeholders demand robust and high-capacity train-to-wayside broadband radio. Current radio technologies implement MIMO (Multiple-Input Multiple-Output technology, whose use requires a good characterization of the propagation. In this paper, the results of an experimental campaign on MIMO propagation in subway tunnels are presented. The campaign makes use of an OFDM testbed at roughly 600 MHz, allowing the measurement of the 2×2 channel transfer matrix under different conditions regarding polarization, antenna separation, tunnel cross section, power allocation algorithm, and so forth. Particular attention is paid to the probability of appearance of keyholes, which imply a severe degradation of the MIMO performance even when transmitter and receiver antennas are uncorrelated. The measurements are carried out using a train that travels at the normal operative velocities. As a result of the measurements, it has been found that the use of vertical polarization at both terminals is advantageous and that, on average but for a narrow margin, λ-spaced antennas outperform λ/2-spaced ones (90% capacities of 7.00 and 6.76 bps/Hz, resp., although the latter show a lower probability of keyholes. However, keyhole probabilities are always below 2%, so their influence on the performance of the whole system is limited.

  4. Evaluation of a ferroelectric tunnel junction by ultraviolet-visible absorption using a removable liquid electrode

    Science.gov (United States)

    Lee, Hong-Sub; Kang, Kyung-Mun; Yeom, Geun Young; Park, Hyung-Ho

    2016-05-01

    Ferroelectric memristors offer a significant alternative to their redox-based analogs in resistive random access memory because a ferroelectric tunnel junction (FTJ) exhibits a memristive effect that induces resistive switching (RS) regardless of the operating current level. This RS results from a change in the ferroelectric polarization direction, allowing the FTJ to overcome the restriction encountered in redox-based memristors. Herein, the memristive effect of an FTJ was investigated by ultraviolet-visible (UV-Vis) absorption spectroscopy using a removable mercury (Hg) top electrode (TE), BaTiO3 (BTO) ferroelectric tunnel layer, La0.7Sr0.3MnO3 (LSMO) semiconductor bottom electrode, and wide-bandgap quartz (100) single-crystal substrate to determine the low-resistance state (LRS) and high-resistance state (HRS) of the FTJ. A BTO (110)/LSMO (110) polycrystal memristor involving a Hg TE showed a small memristive effect (switching ratio). This effect decreased with increasing read voltage because of a small potential barrier height. The LRS and HRS of the FTJ showed quasi-similar UV-Vis absorption spectra, consistent with the small energy difference between the valence-band maximum of BTO and Fermi level of LSMO near the interface between the LRS and HRS. This energy difference stemmed from the ferroelectric polarization and charge-screening effect of LSMO based on an electrostatic model of the FTJ.

  5. Silicon-germanium nanowire tunnel-FETs with homo- and heterostructure tunnel junctions

    Science.gov (United States)

    Richter, S.; Blaeser, S.; Knoll, L.; Trellenkamp, S.; Fox, A.; Schäfer, A.; Hartmann, J. M.; Zhao, Q. T.; Mantl, S.

    2014-08-01

    Experimental results on tunneling field-effect transistors (TFETs) based on strained SiGe on SOI nanowire arrays are presented. A heterostructure SiGe/Si TFET with a vertical tunnel junction consisting of an in situ doped SiGe source and a Si channel with a minimum inverse subthreshold slope of 90 mV/dec is demonstrated. An increase in tunneling area results in higher on-current. The in situ doped heterojunction TFET shows great improvement compared to a homojunction SiGe on SOI nanowire design with implanted junctions. Temperature dependent measurements and device simulations are performed in order to analyze the tunnel transport mechanism in the devices.

  6. Polar Bears

    Science.gov (United States)

    Amstrup, Steven C.; Douglas, David C.; Reynolds, Patricia E.; Rhode, E.B.

    2002-01-01

    Polar bears (Ursus maritimus) are hunted throughout most of their range. In addition to hunting polar bears of the Beaufort Sea region are exposed to mineral and petroleum extraction and related human activities such as shipping road-building, and seismic testing (Stirling 1990).Little was known at the start of this project about how polar bears move about in their environment, and although it was understood that many bears travel across political borders, the boundaries of populations had not been delineated (Amstrup 1986, Amstrup et al. 1986, Amstrup and DeMaster 1988, Garner et al. 1994, Amstrup 1995, Amstrup et al. 1995, Amstrup 2000).As human populations increase and demands for polar bears and other arctic resources escalate, managers must know the sizes and distributions of the polar bear populations. Resource managers also need reliable estimates of breeding rates, reproductive intervals, litter sizes, and survival of young and adults.Our objectives for this research were 1) to determine the seasonal and annual movements of polar bears in the Beaufort Sea, 2) to define the boundaries of the population(s) using this region, 3) to determine the size and status of the Beaufort Sea polar bear population, and 4) to establish reproduction and survival rates (Amstrup 2000).

  7. Characteristics of high-transmission-probability tunnel junctions for use as particle detectors

    International Nuclear Information System (INIS)

    Stricker, D.A.; Alba, G.P.; Anderson, C.C.; Bing, D.D.; Bland, R.W.; Dickson, S.C.; Dignan, T.G.; Gagnon, P.; Johnson, R.T.; Seneclauze, C.M.

    1988-01-01

    Interest in the problem of the galactic dark matter has stimulated development of particle detectors sensitive to very low energies. Superconducting tunnel junctions may be useful in such detectors. We describe here superconducting tunnel junctions with thin barriers which may be suitable for this purpose. We present I-V characteristics and data on the temperature dependence of the subgap tunneling current. We also present some scanning-electron-microscope observations of the thin films of the tunnel junctions

  8. A method for data base management and analysis for wind tunnel data

    Science.gov (United States)

    Biser, Aileen O.

    1987-01-01

    To respond to the need for improved data base management and analysis capabilities for wind-tunnel data at the Langley 16-Foot Transonic Tunnel, research was conducted into current methods of managing wind-tunnel data and a method was developed as a solution to this need. This paper describes the development of the data base management and analysis method for wind-tunnel data. The design and implementation of the software system are discussed and examples of its use are shown.

  9. Two-band modeling of narrow band gap and interband tunneling devices

    OpenAIRE

    Söderström, J. R.; Yu, E. T.; Jackson, M. K.; Rajakarunanayake, Y.; McGill, T. C.

    1990-01-01

    A two-band transfer matrix method has been developed to study tunneling currents in narrow gap and interband tunnel structures. This relatively simple model gives good agreement with recently reported experimental results for InAs/AlSb/InAs/AlSb/InAs double-barrier heterostructures and InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling devices, and should be useful in the design of new interband tunneling devices.

  10. Resonant tunneling in a pulsed phonon field

    DEFF Research Database (Denmark)

    Kral, P.; Jauho, Antti-Pekka

    1999-01-01

    , The nonequilibrium spectral function for the resonance displays the formation and decay of the phonon sidebands on ultrashort time scales. The time-dependent tunneling current through the individual phonon satellites reflects this quasiparticle formation by oscillations, whose time scale is set by the frequency...

  11. Application Of Artificial Intelligence To Wind Tunnels

    Science.gov (United States)

    Lo, Ching F.; Steinle, Frank W., Jr.

    1989-01-01

    Report discusses potential use of artificial-intelligence systems to manage wind-tunnel test facilities at Ames Research Center. One of goals of program to obtain experimental data of better quality and otherwise generally increase productivity of facilities. Another goal to increase efficiency and expertise of current personnel and to retain expertise of former personnel. Third goal to increase effectiveness of management through more efficient use of accumulated data. System used to improve schedules of operation and maintenance of tunnels and other equipment, assignment of personnel, distribution of electrical power, and analysis of costs and productivity. Several commercial artificial-intelligence computer programs discussed as possible candidates for use.

  12. Dielectric Engineered Tunnel Field-Effect Transistor

    OpenAIRE

    Ilatikhameneh, Hesameddin; Ameen, Tarek A.; Klimeck, Gerhard; Appenzeller, Joerg; Rahman, Rajib

    2015-01-01

    The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result a record ON-current of about 1000 uA/um and a subthreshold swing (SS) below 20mV/dec are predicted for WTe2 DE-TFET. The proposed TFET works based on a homojunction channel and electrically doped contacts both of which are immune to interface stat...

  13. Interaction between groundwater and TBM (Tunnel Boring Machine) excavated tunnels

    OpenAIRE

    Font Capó, Jordi

    2012-01-01

    A number of problems, e.g. sudden inflows are encountered during tunneling under the piezometric level, especially when the excavation crosses high transmissivity areas. These inflows may drag materials when the tunnel crosses low competent layers, resulting in subsidence, chimney formation and collapses. Moreover, inflows can lead to a decrease in head level because of aquifer drainage. Tunnels can be drilled by a tunnel boring machine (TBM) to minimize inflows and groundwater impacts, restr...

  14. InAs/Si Hetero-Junction Nanotube Tunnel Transistors

    KAUST Repository

    Hanna, Amir

    2015-04-29

    Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

  15. PREFACE: Time-resolved scanning tunnelling microscopy Time-resolved scanning tunnelling microscopy

    Science.gov (United States)

    Zandvliet, Harold J. W.; Lin, Nian

    2010-07-01

    Scanning tunnelling microscopy has revolutionized our ability to image, manipulate, and investigate solid surfaces on the length scale of individual atoms and molecules. The strength of this technique lies in its imaging capabilities, since for many scientists 'seeing is believing'. However, scanning tunnelling microscopy also suffers from a severe limitation, namely its poor time resolution. Recording a scanning tunnelling microscopy image typically requires a few tens of seconds for a conventional scanning tunnelling microscope to a fraction of a second for a specially designed fast scanning tunnelling microscope. Designing and building such a fast scanning tunnelling microscope is a formidable task in itself and therefore, only a limited number of these microscopes have been built [1]. There is, however, another alternative route to significantly enhance the time resolution of a scanning tunnelling microscope. In this alternative method, the tunnelling current is measured as a function of time with the feedback loop switched off. The time resolution is determined by the bandwidth of the IV converter rather than the cut-off frequency of the feedback electronics. Such an approach requires a stable microscope and goes, of course, at the expense of spatial information. In this issue, we have collected a set of papers that gives an impression of the current status of this rapidly emerging field [2]. One of the very first attempts to extract information from tunnel current fluctuations was reported by Tringides' group in the mid-1990s [3]. They showed that the collective diffusion coefficient can be extracted from the autocorrelation of the time-dependent tunnelling current fluctuations produced by atom motion in and out of the tunnelling junction. In general, current-time traces provide direct information on switching/conformation rates and distributions of residence times. In the case where these processes are thermally induced it is rather straightforward to map

  16. Magnetization reversal of ferromagnetic nanoparticles induced by a stream of polarized electrons

    Energy Technology Data Exchange (ETDEWEB)

    Kozhushner, M.A.; Gatin, A.K.; Grishin, M.V.; Shub, B.R. [Semenov Institute of Chemical Physics of RAS, 4, Kosygin Street, Moscow 119991 (Russian Federation); Kim, V.P.; Khomutov, G.B. [Faculty of Physics, Lomonosov Moscow State University, Lenin Gory 1-2, Moscow 119991 (Russian Federation); Ilegbusi, O.J. [University of Central Florida, 4000 Central Florida Boulevard, Orlando, FL 32816-2450 (United States); Trakhtenberg, L.I. [Semenov Institute of Chemical Physics of RAS, 4, Kosygin Street, Moscow 119991 (Russian Federation)

    2016-09-15

    The remagnetization of ferromagnetic Fe{sub 3}O{sub 4} nanoparticles of several thousand cubic nanometers by spin-polarized current is investigated. For this purpose, magnetite nanoparticles are synthesized and deposited on a conductive nonmagnetic substrate. The remagnetization is conducted in high-vacuum scanning tunneling microscope (STM). The STM tip from magnetized iron wire constitutes one electrode while the ferromagnetic nanoparticle on the graphite surface represents the second electrode. The measured threshold value of remagnetization current (I{sub thresh}=9 nA) is the lowest value of current at which remagnetization occurs. The change in nanoparticle magnetization is detected by the effect of giant magnetic resistance, specifically, the dependence of the weak polarized current (Ipolarized current on magnetic moment of small ferromagnetic nanoclusters. The peculiarities of size dependence of the observed effects are explained. - Highlights: • Ferromagnetic nanoparticle in STM with ferromagnetic tip. • Change of the direction of nanoparticle magnetization by current I>I{sub cr}=9 nA. • GMR effect used to control change of magnetization.

  17. Building information modelling review with potential applications in tunnel engineering of China.

    Science.gov (United States)

    Zhou, Weihong; Qin, Haiyang; Qiu, Junling; Fan, Haobo; Lai, Jinxing; Wang, Ke; Wang, Lixin

    2017-08-01

    Building information modelling (BIM) can be applied to tunnel engineering to address a number of problems, including complex structure, extensive design, long construction cycle and increased security risks. To promote the development of tunnel engineering in China, this paper combines actual cases, including the Xingu mountain tunnel and the Shigu Mountain tunnel, to systematically analyse BIM applications in tunnel engineering in China. The results indicate that BIM technology in tunnel engineering is currently mainly applied during the design stage rather than during construction and operation stages. The application of BIM technology in tunnel engineering covers many problems, such as a lack of standards, incompatibility of different software, disorganized management, complex combination with GIS (Geographic Information System), low utilization rate and poor awareness. In this study, through summary of related research results and engineering cases, suggestions are introduced and an outlook for the BIM application in tunnel engineering in China is presented, which provides guidance for design optimization, construction standards and later operation maintenance.

  18. Building information modelling review with potential applications in tunnel engineering of China

    Science.gov (United States)

    Zhou, Weihong; Qin, Haiyang; Qiu, Junling; Fan, Haobo; Lai, Jinxing; Wang, Ke; Wang, Lixin

    2017-08-01

    Building information modelling (BIM) can be applied to tunnel engineering to address a number of problems, including complex structure, extensive design, long construction cycle and increased security risks. To promote the development of tunnel engineering in China, this paper combines actual cases, including the Xingu mountain tunnel and the Shigu Mountain tunnel, to systematically analyse BIM applications in tunnel engineering in China. The results indicate that BIM technology in tunnel engineering is currently mainly applied during the design stage rather than during construction and operation stages. The application of BIM technology in tunnel engineering covers many problems, such as a lack of standards, incompatibility of different software, disorganized management, complex combination with GIS (Geographic Information System), low utilization rate and poor awareness. In this study, through summary of related research results and engineering cases, suggestions are introduced and an outlook for the BIM application in tunnel engineering in China is presented, which provides guidance for design optimization, construction standards and later operation maintenance.

  19. Bottom-up and top-down fabrication of nanowire-based electronic devices: In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions

    Science.gov (United States)

    Kuo, Meng-Wei

    Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up techniques can achieve higher aspect ratio at reduced dimension without having surface and sub-surface damage, uniform doping distributions with abrupt junction profiles are less challenging for top-down methods. In this dissertation, nanowires fabricated by both methods were systematically investigated to understand: (1) the in situ incorporation of boron (B) dopants in Si nanowires grown by the bottom-up vapor-liquid-solid (VLS) technique, and (2) the impact of plasma-induced etch damage on InGaAs p +-i-n+ nanowire junctions for tunnel field-effect transistors (TFETs) applications. In Chapter 2 and 3, the in situ incorporation of B in Si nanowires grown using silane (SiH4) or silicon tetrachloride (SiCl4) as the Si precursor and trimethylboron (TMB) as the p-type dopant source is investigated by I-V measurements of individual nanowires. The results from measurements using a global-back-gated test structure reveal nonuniform B doping profiles on nanowires grown from SiH4, which is due to simultaneous incorporation of B from nanowire surface and the catalyst during VLS growth. In contrast, a uniform B doping profile in both the axial and radial directions is achieved for TMBdoped Si nanowires grown using SiCl4 at high substrate temperatures. In Chapter 4, the I-V characteristics of wet- and dry-etched InGaAs p+-i-n+ junctions with different mesa geometries, orientations, and perimeter-to-area ratios are compared to evaluate the impact of the dry etch process on the junction leakage current properties. Different post-dry etch treatments, including wet etching and thermal annealing, are performed and the effectiveness of each is assessed by temperaturedependent I-V measurements. As compared to wet-etched control devices, dry-etched junctions have a significantly

  20. High-performance silicon nanotube tunneling FET for ultralow-power logic applications

    KAUST Repository

    Fahad, Hossain M.

    2013-03-01

    To increase typically low output drive currents from tunnel field-effect transistors (FETs), we show a silicon vertical nanotube (NT) architecture-based FET\\'s effectiveness. Using core (inner) and shell (outer) gate stacks, the silicon NT tunneling FET shows a sub-60 mV/dec subthreshold slope, ultralow off -state leakage current, higher drive current compared with gate-all-around nanowire silicon tunnel FETs. © 1963-2012 IEEE.

  1. Tunneling between edge states in a quantum spin Hall system.

    Science.gov (United States)

    Ström, Anders; Johannesson, Henrik

    2009-03-06

    We analyze a quantum spin Hall device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the low-bias tunneling current and the differential conductance exhibit scaling with voltage and temperature that depend nonlinearly on the strength of the electron-electron interaction.

  2. LEP tunnel monorail

    CERN Multimedia

    1985-01-01

    A monorail from CERN's Large Electron Positron collider (LEP, for short). It ran around the 27km tunnel, transporting equipment and personnel. With its 27-kilometre circumference, LEP was the largest electron-positron accelerator ever built and ran from 1989 to 2000. During 11 years of research, LEP's experiments provided a detailed study of the electroweak interaction. Measurements performed at LEP also proved that there are three – and only three – generations of particles of matter. LEP was closed down on 2 November 2000 to make way for the construction of the Large Hadron Collider in the same tunnel.

  3. Excavating a transfer tunnel

    CERN Multimedia

    Laurent Guiraud

    2000-01-01

    The transfer tunnel being dug here will take the 450 GeV beam from the SPS and inject it into the LHC where the beam energies will be increased to 7 TeV. In order to transfer this beam from the SPS to the LHC, two transfer tunnels are used to circulate the beams in opposite directions. When excavated, the accelerator components, including magnets, beam pipes and cryogenics will be installed and connected to both the SPS and LHC ready for operation to begin in 2008.

  4. Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors

    Science.gov (United States)

    Glass, S.; von den Driesch, N.; Strangio, S.; Schulte-Braucks, C.; Rieger, T.; Narimani, K.; Buca, D.; Mantl, S.; Zhao, Q. T.

    2017-12-01

    The benefits of a gate-normal tunneling architecture in enhancing the on-current and average subthreshold swing of tunneling field-effect transistors were scrutinized in experiment through careful physical analysis of a Si0.50Ge0.50/Si heterostructure. In accordance with theoretical predictions, it is confirmed that the on-current is governed by line tunneling scaling with the source-gate overlap area of our devices. Our analysis identifies the early onset of parasitic diagonal tunneling paths as most detrimental for a low average subthreshold swing. By counter doping the channel, this onset can be shifted favorably, permitting low average subthreshold swings down to 87 mV/dec over four decades of drain current and high on-off current ratios exceeding 106.

  5. Breaking through the tranfer tunnel

    CERN Document Server

    Laurent Guiraud

    2001-01-01

    This image shows the tunnel boring machine breaking through the transfer tunnel into the LHC tunnel. Proton beams will be transferred from the SPS pre-accelerator to the LHC at 450 GeV through two specially constructed transfer tunnels. From left to right: LHC Project Director, Lyn Evans; CERN Director-General (at the time), Luciano Maiani, and Director for Accelerators, Kurt Hubner.

  6. Robust spin transfer torque in antiferromagnetic tunnel junctions

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed

    2017-04-18

    We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

  7. Highly functional tunnelling devices integrated in 3D

    DEFF Research Database (Denmark)

    Wernersson, Lars-Erik; Lind, Erik; Lindström, Peter

    2003-01-01

    to adjust the peak voltage of certain peaks in a controlled fashion, which creates a highly functional tunnelling device. These results show the need for a strong interaction between the development of circuit models and processing technology to develop new nano-electronic devices and circuits. Copyright...... circuit in order to optimize the performance of the device. In addition to the tunnelling structure below the grating, these transistors may be integrated in 3D by the introduction of another tunnelling structure directly over the metal grating. In the integrated device structure, the gate acts...... simultaneously on both tunnelling structures and the obtained characteristics are the result of the interplay between the two tunnelling structures and the gate. An equivalent circuit model is developed and we show how this interaction influences the current-voltage characteristics. The gate may be used...

  8. Charge Transport in 2D DNA Tunnel Junction Diodes

    KAUST Repository

    Yoon, Minho

    2017-11-06

    Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiOx junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiOx ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules.

  9. High-performance single nanowire tunnel diodes.

    Science.gov (United States)

    Wallentin, Jesper; Persson, Johan M; Wagner, Jakob B; Samuelson, Lars; Deppert, Knut; Borgström, Magnus T

    2010-03-10

    We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.

  10. Magnetic tunneling junctions with the Heusler compound Co2Cr0.6Fe0.4Al

    International Nuclear Information System (INIS)

    Conca Parra, A.

    2007-01-01

    Materials with large spin polarization are required for applications in spintronics devices. For this reason, major research efforts are directed to study the properties of compounds which are expected to be half metals, i.e. materials with 100% spin polarization. Half metals are expected to have a gap in the density of states at the Fermi energy for one spin band while the other spin band is metallic leading to a completely spin polarized current. The ferromagnetic full Heusler alloy Co 2 Cr 0.6 Fe 0.4 Al (CCFA) has attracted great interest in the field of spintronics. The high Tc (800 K) and the expected half metallicity make CCFA a good candidate for applications in spintronic devices such as magnetic tunneling junctions (MTJs). This thesis presents the results of the study of the electronic and structural properties of CCFA thin films. The films were implemented in magnetic tunneling junctions and the tunneling magnetoresistance effect (TMR) was investigated. The main objectives were the measurement of the spin polarisation of the CCFA alloy and to obtain information about its electronic structure. The influence of the deposition conditions on the thin film properties and on the surface crystalline order and their respective influence on the TMR ratio was investigated. Epitaxial CCFA thin films with two alternative growth orientations were deposited on different substrates and buffer layers. An annealing step was used to improve the crystalline properties of the thin films. In the tunneling junctions, Al 2 O 3 was used as a barrier material and Co was chosen as counter electrode. The multilayer systems were patterned in Mesa structures using lithographic techniques. In the framework of the Julliere model, a maximum spin polarisation of 54% at 4K was measured in tunneling junctions with epitaxial CCFA electrodes. A strong influence of the annealing temperature on the TMR ratio was determined. The increase of the TMR ratio could be correlated to an improvement of

  11. Charge transport in non-polar and semi-polar III-V nitride heterostructures

    International Nuclear Information System (INIS)

    Konar, Aniruddha; Verma, Amit; Fang, Tian; Zhao, Pei; Jana, Raj; Jena, Debdeep

    2012-01-01

    Compared to the intense research focus on the optical properties, the transport properties in non-polar and semi-polar III-nitride semiconductors remain relatively unexplored to date. The purpose of this paper is to discuss charge-transport properties in non-polar and semi-polar orientations of GaN in a comparative fashion to what is known for transport in polar orientations. A comprehensive approach is adopted, starting from an investigation of the differences in the electronic bandstructure along different polar orientations of GaN. The polarization fields along various orientations are then discussed, followed by the low-field electron and hole mobilities. A number of scattering mechanisms that are specific to non-polar and semi-polar GaN heterostructures are identified, and their effects are evaluated. Many of these scattering mechanisms originate due to the coupling of polarization with disorder and defects in various incarnations depending on the crystal orientation. The effect of polarization orientation on carrier injection into quantum-well light-emitting diodes is discussed. This paper ends with a discussion of orientation-dependent high-field charge-transport properties including velocity saturation, instabilities and tunneling transport. Possible open problems and opportunities are also discussed. (paper)

  12. Unstable Semiclassical Trajectories in Tunneling

    CERN Document Server

    Levkov, D G; Sibiryakov, S M

    2007-01-01

    Some tunneling phenomena are described, in the semiclassical approximation, by unstable complex trajectories. We develop a systematic procedure to stabilize the trajectories and to calculate the tunneling probability, including both the suppression exponent and prefactor. We find that the instability of tunneling solutions modifies the power-law dependence of the prefactor on h as compared to the case of stable solutions.

  13. The SLAC polarized electron source

    International Nuclear Information System (INIS)

    Tang, H.; Alley, R.; Frisch, J.

    1995-06-01

    The SLAC polarized electron source employs a photocathode DC high voltage gun with a loadlock and a YAG pumped Ti:sapphire laser system for colliding beam experiments or a flash lamp pumped Ti:sapphire laser for fixed target experiments. It uses a thin, strained GaAs(100) photocathode, and is capable of producing a pulsed beam with a polarization of ≥80% and a peak current exceeding 10 A. Its operating efficiency has reached 99%. The physics and technology of producing high polarization electron beams from a GaAs photocathode will be reviewed. The prospects of realizing a polarized electron source for future linear colliders will also be discussed

  14. Sensor integration study for a shallow tunnel detection system.

    Energy Technology Data Exchange (ETDEWEB)

    Yee, Mark L.; Abbott, Robert E.; Bonal, Nedra; Elbring, Gregory Jay; Senglaub, Michael E.

    2010-02-01

    During the past several years, there has been a growing recognition of the threats posed by the use of shallow tunnels against both international border security and the integrity of critical facilities. This has led to the development and testing of a variety of geophysical and surveillance techniques for the detection of these clandestine tunnels. The challenges of detection of these tunnels arising from the complexity of the near surface environment, the subtlety of the tunnel signatures themselves, and the frequent siting of these tunnels in urban environments with a high level of cultural noise, have time and again shown that any single technique is not robust enough to solve the tunnel detection problem in all cases. The question then arises as to how to best combine the multiple techniques currently available to create an integrated system that results in the best chance of detecting these tunnels in a variety of clutter environments and geologies. This study utilizes Taguchi analysis with simulated sensor detection performance to address this question. The analysis results show that ambient noise has the most effect on detection performance over the effects of tunnel characteristics and geological factors.

  15. Tunnelling with wormhole creation

    Energy Technology Data Exchange (ETDEWEB)

    Ansoldi, S. [National Institute of Nuclear Physics (INFN) (Italy); Tanaka, T., E-mail: tanaka@yukawa.kyoto-u.ac.jp [Kyoto University, Department of Physics (Japan)

    2015-03-15

    The description of quantum tunnelling in the presence of gravity shows subtleties in some cases. We discuss wormhole production in the context of the spherically symmetric thin-shell approximation. By presenting a fully consistent treatment based on canonical quantization, we solve a controversy present in the literature.

  16. Tunnelling with wormhole creation

    OpenAIRE

    Ansoldi, Stefano; Tanaka, Takahiro

    2014-01-01

    The description of quantum tunnelling in the presence of gravity shows subtleties in some cases. Here we discuss wormhole production in the context of the spherically symmetric thin-shell approximation. By presenting a fully consistent treatment based on canonical quantization, we solve a controversy present in literature.

  17. Tunnelling Effects in Chemistry

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 19; Issue 2. Tunnelling Effects in Chemistry: Molecules in the Strange Quantum World. Sharmistha Karmakar Deepthi Jose Ayan Datta. General Article Volume 19 Issue 2 February 2014 pp 160-174 ...

  18. INCAS SUBSONIC WIND TUNNEL

    Directory of Open Access Journals (Sweden)

    Corneliu STOICA

    2009-09-01

    Full Text Available The INCAS Subsonic Wind Tunnel is a closed circuit, continuous, atmospheric pressure facility with a maximum speed of 110 m/s. The test section is octagonal ,of 2.5 m wide, 2.0 m high and 4 m long. The tunnel is powered by a 1200 kW, air cooled variable speed DC motor which drives a 12 blade, 3.5 m diameter fan and is equipped with a six component pyramidal type external mechanical balance with a 700 Kgf maximum lift capacity.The angle of attack range is between -45º and +45º while the yaw angle range is between -140º and +216º .The data acquisition system has been modified recently to allow the recording of all test data on a PC - type computer using LABVIEW and a PXI – type chassis containing specialized data acquisition modules.The tunnel is equipped with a variable frequency electrical supply system for powered models and a 10 bar compressed air supply for pneumatic flow control applications.In the recent years the subsonic wind tunnel has been intensively used for tests within several European projects (AVERT, CESAR and others.

  19. Tunnelling Effects in Chemistry

    Indian Academy of Sciences (India)

    IAS Admin

    GENERAL ⎜ ARTICLE. Tunnelling Effects in Chemistry. Molecules in the Strange Quantum World. Sharmistha Karmakar, Deepthi Jose and Ayan Datta. (left) Sharmistha Karmakar is doing her PhD in the group of. Ayan Datta, IACS,. Kolkata. Her research interests are modelling molecules with strong optical absorbtion and.

  20. Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

    Science.gov (United States)

    Wang, K.; Sanderink, J. G. M.; Bolhuis, T.; van der Wiel, W. G.; de Jong, M. P.

    2015-01-01

    A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators. PMID:26486931

  1. Effect of band gap narrowing on GaAs tunnel diode I-V characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Lebib, A.; Hannanchi, R. [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); Beji, L., E-mail: lotbej_fr@yahoo.fr [Laboratoire d' énergie et de matériaux, LabEM-LR11ES34-Université de sousse (Tunisia); EL Jani, B. [Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences, Université de Monastir, 5019 Monastir (Tunisia)

    2016-12-01

    We report on experimental and theoretical study of current-voltage characteristics of C/Si-doped GaAs tunnel diode. For the investigation of the experimental data, we take into account the band-gap narrowing (BGN) effect due to heavily-doped sides of the tunnel diode. The BGN of the n- and p-sides of tunnel diode was measured by photoluminescence spectroscopy. The comparison between theoretical results and experimental data reveals that BGN effect enhances tunneling currents and hence should be considered to identify more accurately the different transport mechanisms in the junction. For C/Si-doped GaAs tunnel diode, we found that direct tunneling is the dominant transport mechanism at low voltages. At higher voltages, this mechanism is replaced by the rate-controlling tunneling via gap states in the forbidden gap.

  2. AGS polarized H- source

    International Nuclear Information System (INIS)

    Kponou, A.; Alessi, J.G.; Sluyters, T.

    1985-01-01

    The AGS polarized H - source is now operational. During a month-long experimental physics run in July 1984, pulses equivalent to 15 μA x 300 μs (approx. 3 x 10 10 protons) were injected into the RFQ preaccelerator. Beam polarization, measured at 200 MeV, was approx. 75%. After the run, a program to increase the H - yield of the source was begun and significant progress has been made. The H - current is now frequently 20 to 30 μA. A description of the source and some details of our operating experience are given. We also briefly describe the improvement program

  3. The Channel Tunnel

    Science.gov (United States)

    2006-01-01

    The Channel Tunnel is a 50.5 km-long rail tunnel beneath the English Channel at the Straits of Dover. It connects Dover, Kent in England with Calais, northern France. The undersea section of the tunnel is unsurpassed in length in the world. A proposal for a Channel tunnel was first put forward by a French engineer in 1802. In 1881, a first attempt was made at boring a tunnel from the English side; the work was halted after 800 m. Again in 1922, English workers started boring a tunnel, and advanced 120 m before it too was halted for political reasons. The most recent attempt was begun in 1987, and the tunnel was officially opened in 1994. At completion it was estimated that the project cost around $18 billion. It has been operating at a significant loss since its opening, despite trips by over 7 million passengers per year on the Eurostar train, and over 3 million vehicles per year. With its 14 spectral bands from the visible to the thermal infrared wavelength region, and its high spatial resolution of 15 to 90 meters (about 50 to 300 feet), ASTER images Earth to map and monitor the changing surface of our planet. ASTER is one of five Earth-observing instruments launched December 18, 1999, on NASA's Terra satellite. The instrument was built by Japan's Ministry of Economy, Trade and Industry. A joint U.S./Japan science team is responsible for validation and calibration of the instrument and the data products. The broad spectral coverage and high spectral resolution of ASTER provides scientists in numerous disciplines with critical information for surface mapping, and monitoring of dynamic conditions and temporal change. Example applications are: monitoring glacial advances and retreats; monitoring potentially active volcanoes; identifying crop stress; determining cloud morphology and physical properties; wetlands evaluation; thermal pollution monitoring; coral reef degradation; surface temperature mapping of soils and geology; and measuring surface heat balance. The

  4. Accelerating polarized beams in Tevatron

    International Nuclear Information System (INIS)

    Teng, L.C.

    1989-02-01

    In this paper, we will examine the totality of equipment, manpower and cost necessary to obtain a polarized proton beam in the Tevatron. We will not, however, be concerned with the acquisition and acceleration of polarized /bar p/ beams. Furthermore we will consider only a planar main ring without overpass, although it is expected that Siberian snake schemes could be made to apply equally well to non-planar machines. In addition to not wanting to tackle here the task of reformulating the theory for a non-planar closed orbit, we also anticipate that as part of the Tevatron upgrade the main ring will in the not too distant future, be replaced by a planar main injector situated in a separate tunnel. 4 refs., 11 figs., 1 tab

  5. Optically pumped polarized H- ion source

    International Nuclear Information System (INIS)

    Anderson, L.W.

    1986-01-01

    The current status and future prospects for the optically pumped polarized H - ion source are discussed. At the present time H - ion currents of 60 μA and with a polarization of 65% have been produced. The ion current and polarization can be increased significantly if the optically pumped Na charge exchange target density and polarization can be increased. Studies of wall surfaces that permit many bounces before depolarizing the Na electron spin and studies of radiation trapping in optically pumped Na indicate that the Na target density and polarization can be increased substantially. 27 refs., 6 figs., 2 tabs

  6. Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory.

    Science.gov (United States)

    Lee, Sangheon; Woo, Jiyong; Lee, Daeseok; Cha, Euijun; Hwang, Hyunsang

    2014-01-01

    In this research, we analyzed the multi-functional role of a tunnel barrier that can be integrated in devices. This tunnel barrier, acting as an internal resistor, changes its resistance with applied bias. Therefore, the current flow in the devices can be controlled by a tunneling mechanism that modifies the tunnel barrier thickness for non-linearity and switching uniformity of devices. When a device is in a low-resistance state, the tunnel barrier controls the current behavior of the device because most of the bias is applied to the tunnel barrier owing to its higher resistance. Furthermore, the tunnel barrier induces uniform filament formation during set operation with the tunnel barrier controlling the current flow.

  7. Monitoring pilot projects on bored tunnelling : The Second Heinenoord Tunnel and the Botlek Rail Tunnel

    NARCIS (Netherlands)

    Bakker, K.J.; De Boer, F.; Admiraal, J.B.M.; Van Jaarsveld, E.P.

    1999-01-01

    Two pilot projects for bored tunnelling in soft soil have been undertaken in the Netherlands. The monitoring was commissioned under the authority of the Centre for Underground Construction (COB). A description of the research related to the Second Heinenoord Tunnel and the Botlek Rail Tunnel will be

  8. Political polarization

    OpenAIRE

    Dixit, Avinash K.; Weibull, Jörgen W.

    2007-01-01

    Failures of government policies often provoke opposite reactions from citizens; some call for a reversal of the policy, whereas others favor its continuation in stronger form. We offer an explanation of such polarization, based on a natural bimodality of preferences in political and economic contexts and consistent with Bayesian rationality.

  9. Political polarization.

    Science.gov (United States)

    Dixit, Avinash K; Weibull, Jörgen W

    2007-05-01

    Failures of government policies often provoke opposite reactions from citizens; some call for a reversal of the policy, whereas others favor its continuation in stronger form. We offer an explanation of such polarization, based on a natural bimodality of preferences in political and economic contexts and consistent with Bayesian rationality.

  10. The Bochum Polarized Target

    International Nuclear Information System (INIS)

    Reicherz, G.; Goertz, S.; Harmsen, J.; Heckmann, J.; Meier, A.; Meyer, W.; Radtke, E.

    2001-01-01

    The Bochum 'Polarized Target' group develops the target material 6 LiD for the COMPASS experiment at CERN. Several different materials like alcohols, alcanes and ammonia are under investigation. Solid State Targets are polarized in magnetic fields higher than B=2.5T and at temperatures below T=1K. For the Dynamic Nuclear Polarization process, paramagnetic centers are induced chemically or by irradiation with ionizing beams. The radical density is a critical factor for optimization of polarization and relaxation times at adequate magnetic fields and temperatures. In a high sensitive EPR--apparatus, an evaporator and a dilution cryostat with a continuous wave NMR--system, the materials are investigated and optimized. To improve the polarization measurement, the Liverpool NMR-box is modified by exchanging the fixed capacitor for a varicap diode which not only makes the tuning very easy but also provides a continuously tuned circuit. The dependence of the signal area upon the circuit current is measured and it is shown that it follows a linear function

  11. delta-biased Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Monaco, R.; Mygind, Jesper; Koshelet, V.

    2010-01-01

    Abstract: The behavior of a long Josephson tunnel junction drastically depends on the distribution of the dc bias current. We investigate the case in which the bias current is fed in the central point of a one-dimensional junction. Such junction configuration has been recently used to detect...... the persistent currents circulating in a superconducting loop. Analytical and numerical results indicate that the presence of fractional vortices leads to remarkable differences from the conventional case of uniformly distributed dc bias current. The theoretical findings are supported by detailed measurements...

  12. Spin injection and magnetoresistance in MoS2-based tunnel junctions using Fe3Si Heusler alloy electrodes.

    Science.gov (United States)

    Rotjanapittayakul, Worasak; Pijitrojana, Wanchai; Archer, Thomas; Sanvito, Stefano; Prasongkit, Jariyanee

    2018-03-19

    Recently magnetic tunnel junctions using two-dimensional MoS 2 as nonmagnetic spacer have been fabricated, although their magnetoresistance has been reported to be quite low. This may be attributed to the use of permalloy electrodes, injecting current with a relatively small spin polarization. Here we evaluate the performance of MoS 2 -based tunnel junctions using Fe 3 Si Heusler alloy electrodes. Density functional theory and the non-equilibrium Green's function method are used to investigate the spin injection efficiency (SIE) and the magnetoresistance (MR) ratio as a function of the MoS 2 thickness. We find a maximum MR of ~300% with a SIE of about 80% for spacers comprising between 3 and 5 MoS 2 monolayers. Most importantly, both the SIE and the MR remain robust at finite bias, namely MR > 100% and SIE > 50% at 0.7 V. Our proposed materials stack thus demonstrates the possibility of developing a new generation of performing magnetic tunnel junctions with layered two-dimensional compounds as spacers.

  13. Low Schottky barrier black phosphorus field-effect devices with ferromagnetic tunnel contacts.

    Science.gov (United States)

    Kamalakar, M Venkata; Madhushankar, B N; Dankert, André; Dash, Saroj P

    2015-05-13

    Black phosphorus (BP) has been recently unveiled as a promising 2D direct bandgap semiconducting material. Here, ambipolar field-effect transistor behavior of nanolayers of BP with ferromagnetic tunnel contacts is reported. Using TiO2/Co contacts, a reduced Schottky barrier transistor performance is achieved in the devices discussed here, with drain current modulation of four to six orders of magnitude and a mobility of μh ≈ 155 cm(2) V(-1) s(-1) for hole conduction at room temperature. Magnetoresistance calculations using a spin diffusion model reveal that the source-drain contact resistances in the BP device can be tuned by gate voltage to an optimal range for injection and detection of spin-polarized holes. The results of the study demonstrate the prospect of BP nanolayers for efficient nanoelectronic and spintronic devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Electronic transport through EuO spin-filter tunnel junctions

    KAUST Repository

    Jutong, Nuttachai

    2012-11-12

    Epitaxial spin-filter tunnel junctions based on the ferromagnetic semiconductor europium monoxide (EuO) are investigated by means of density functional theory. In particular, we focus on the spin transport properties of Cu(100)/EuO(100)/Cu(100) junctions. The dependence of the transmission coefficient and the current-voltage curves on the interface spacing and EuO thickness is explained in terms of the EuO density of states and the complex band structure. Furthermore, we also discuss the relation between the spin transport properties and the Cu-EuO interface geometry. The level alignment of the junction is sensitively affected by the interface spacing, since this determines the charge transfer between EuO and the Cu electrodes. Our calculations indicate that EuO epitaxially grown on Cu can act as a perfect spin filter, with a spin polarization of the current close to 100%, and with both the Eu-5d conduction-band and the Eu-4f valence-band states contributing to the coherent transport. For epitaxial EuO on Cu, a symmetry filtering is observed, with the Δ1 states dominating the transmission. This leads to a transport gap larger than the fundamental EuO band gap. Importantly, the high spin polarization of the current is preserved up to large bias voltages.

  15. Josephson tunnel junction microwave attenuator

    DEFF Research Database (Denmark)

    Koshelets, V. P.; Shitov, S. V.; Shchukin, A. V.

    1993-01-01

    A new element for superconducting electronic circuitry-a variable attenuator-has been proposed, designed, and successfully tested. The principle of operation is based on the change in the microwave impedance of a superconductor-insulator-superconductor (SIS) Josephson tunnel junction when dc biased...... at different points in the current-voltage characteristic. Both numerical calculations based on the Tien-Gordon theory and 70-GHz microwave experiments have confirmed the wide dynamic range (more than 15-dB attenuation for one stage) and the low insertion loss in the ''open'' state. The performance of a fully...... integrated submillimeter receiver circuit which comprises a flux-flow oscillator (FFO) as local oscillator, a superconducting variable attenuator, and a microwave SIS detector with tuned-out capacitance is also reported....

  16. B-Target Room Tunnel Redesigned

    Energy Technology Data Exchange (ETDEWEB)

    Esfandiari, Reza; /San Jose State U. /SLAC

    2010-08-25

    Several groups at SLAC National Accelerator Laboratory are currently working on a RF Modulator prototype for a future linear collider known as the International Linear Collider (ILC). The ILC runs using about a 1000 Klystrons which create high power carrier waves for the particle acceleration. Klystrons receive their electrical input power from modulators. In order to move beyond the prototype phase, the laboratory might expand its ground base further down a tunnel located at the End Station B (ESB) in order to house four new Klystron Modulator Test Stations. This area is known as the B-Target Room Tunnel, and the task was to redesign the tunnel layout for the upcoming changes. The project first began by collecting substantial amount of information about the prototyped project, the tunnel and the researchers feedback of what they would like to see in the upcoming design. Subsequent to numerous planning and presentations, one particular design was. Calculations for this design were then performed for the most complex aspects of the project. Based on the results of the calculations, specific sample beams, welds, bolts and materials were chosen for the possible future construction.

  17. Hawking Radiation As Tunneling

    International Nuclear Information System (INIS)

    Parikh, Maulik K.; Wilczek, Frank

    2000-01-01

    We present a short and direct derivation of Hawking radiation as a tunneling process, based on particles in a dynamical geometry. The imaginary part of the action for the classically forbidden process is related to the Boltzmann factor for emission at the Hawking temperature. Because the derivation respects conservation laws, the exact spectrum is not precisely thermal. We compare and contrast the problem of spontaneous emission of charged particles from a charged conductor

  18. The beam dump tunnels

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    In these images workers are digging the tunnels that will be used to dump the counter-circulating beams. Travelling just a fraction under the speed of light, the beams at the LHC will each carry the energy of an aircraft carrier travelling at 12 knots. In order to dispose of these beams safely, a beam dump is used to extract the beam and diffuse it before it collides with a radiation shielded graphite target.

  19. Carpal tunnel release

    DEFF Research Database (Denmark)

    Larsen, Morten Bo; Sørensen, A I; Crone, K L

    2013-01-01

    A single-blind, randomized, controlled trial was done to compare the results of carpal tunnel release using classic incision, short incision, or endoscopic technique. In total, 90 consecutive cases were included. Follow-up was 24 weeks. We found a significantly shorter sick leave in the endoscopi...... incision could be found. There were no serious complications in either group. The results indicate that the endoscopic procedure is safe and has the benefit of faster rehabilitation and return to work....

  20. Tunnel blasting - recent developments

    Energy Technology Data Exchange (ETDEWEB)

    White, T.E.

    1999-05-01

    While tunnelling machines are more efficient than previously, there are still areas where blasting is a more efficient method of advance. Drilling and design methods are increasingly sophisticated, as is choice of explosive. Explosive deployment must be carefully calculated so as to avoid desensitisation. Nitroglycerine may be used as slurries; bulk mixing on site of ANFO is also practised in mining in the UK. Electric detonators, Nonel tubes, and electronic detonators are also increasingly employed.