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Sample records for point defect parameters

  1. Point defects and defect clusters examined on the basis of some fundamental experiments

    International Nuclear Information System (INIS)

    Zuppiroli, L.

    1975-01-01

    On progressing from the centre of the defect to the surface the theoretical approach to a point defect passes from electronic theories to elastic theory. Experiments by which the point defect can be observed fall into two categories. Those which detect long-range effects: measurement of dimensional variations in the sample; measurement of the mean crystal parameter variation; elastic X-ray scattering near the nodes of the reciprocal lattice (Huang scattering). Those which detect more local effects: low-temperature resistivity measurement; positron capture and annihilation; local scattering far from the reciprocal lattice nodes. Experiments involving both short and long-range effects can always be found. This is the case for example with the dechanneling of α particles by defects. Certain of the experimental methods quoted above apply also to the study of point defect clusters. These methods are illustrated by some of their most striking results which over the last twenty years have refined our knowledge of point defects and defect clusters: length and crystal parameter measurements; diffuse X-ray scattering; low-temperature resistivity measurements; ion emission microscopy; electron microscopy; elastoresistivity [fr

  2. Vortex pinning by point defect in superconductors

    International Nuclear Information System (INIS)

    Liao Hongyin; Zhou Shiping; Du Haochen

    2003-01-01

    We apply the periodic time-dependent Ginzburg-Landau model to study vortex distribution in type-II superconductors with a point-like defect and square pinning array. A defect site will pin vortices, and a periodic pinning array with right geometric parameters, which can be any form designed in advance, shapes the vortex pattern as external magnetic field varies. The maximum length over which an attractive interaction between a pinning centre and a vortex extends is estimated to be about 6.0ξ. We also derive spatial distribution expressions for the order parameter, vector potential, magnetic field and supercurrent induced by a point defect. Theoretical results and numerical simulations are compared with each other and they are consistent

  3. Point defects and atomic transport in crystals

    International Nuclear Information System (INIS)

    Lidiard, A.B.

    1981-02-01

    There are two principle aspects to the theory of atomic transport in crystals as caused by the action of point defects, namely (1) the calculation of relevant properties of the point defects (energies and other thermodynamic characteristics of the different possible defects, activation energies and other mobility parameters) and (2) the statistical mechanics of assemblies of defects, both equilibrium and non-equilibrium assemblies. In the five lectures given here both these aspects are touched on. The first two lectures are concerned with the calculation of relevant point defect properties, particularly in ionic crystals. The first lecture is more general, the second is concerned particularly with some recent calculations of the free volumes of formation of defects in various ionic solids; these solve a rather long-standing problem in this area. The remaining three lectures are concerned with the kinetic theory of defects mainly in relaxation, drift and diffusion situations

  4. Point-defect migration into an infinitesimal dislocation loop

    International Nuclear Information System (INIS)

    Woo, C.H.

    1981-11-01

    Point-defect migration into an infinitesimal dislocation loop in an isotropic linear elastic medium is described. Particular care has been taken to include the effects of the saddle-point shape anisotropy of the point defect. Expressions for the reaction radii and the bias are derived, both in the presence and absence of an external applied stress. These are found to depend on intrinsic parameters, such as the loop strength, the loop nature (vacancy or interstitial), the relaxation volume, the saddle-point shape, and extrinsic parameters, such as the magnitude and direction of the external stress, and the temperature. The implications of the results are discussed

  5. Effect of saddle-point anisotropy on point-defect drift-diffusion into straight dislocations

    International Nuclear Information System (INIS)

    Skinner, B.C.; Woo, C.H.

    1983-02-01

    Effects on point-defect drift-diffusion in the strain fields of edge or screw dislocations, due to the anisotropy of the point defect in its saddle-point configuration, are investigated. Expressions for sink strength and bias that include the saddle-point shape effect are derived, both in the absence and presence of an externally applied stress. These are found to depend on intrinsic parameters such as the relaxation volume and the saddle-point shape of the point defects, and extrinsic parameters such as temperature and the magnitude and direction of the externally applied stress with respect to the line direction and Burgers vector direction of the dislocation. The theory is applied to fcc copper and bcc iron. It is found that screw dislocations are biased sinks and that the stress-induced bias differential for the edge dislocations depends much more on the line direction than the Burgers vector direction. Comparison with the stress-induced bias differential due to the usual SIPA effect is made. It is found that the present effect causes a bias differential that is more than an order of magnitude larger

  6. Point defects in solids

    International Nuclear Information System (INIS)

    Anon.

    1978-01-01

    The principal properties of point defects are studied: thermodynamics, electronic structure, interactions with etended defects, production by irradiation. Some measuring methods are presented: atomic diffusion, spectroscopic methods, diffuse scattering of neutron and X rays, positron annihilation, molecular dynamics. Then points defects in various materials are investigated: ionic crystals, oxides, semiconductor materials, metals, intermetallic compounds, carbides, nitrides [fr

  7. On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon

    International Nuclear Information System (INIS)

    Vanhellemont, J.; Romano-Rodriguez, A.

    1994-01-01

    A semi-quantitative model describing the influence of interfaces and stress fields on {113}-defect generation in silicon during 1-MeV electron irradiation, is further developed to take into account also the role of extrinsic point defects. It is shown that the observed distribution of {113}-defects in high-flux electron-irradiated silicon and its dependence on irradiation temperature and dopant concentration can be understood by taking into account not only the influence of the surfaces and interfaces as sinks for intrinsic point defects but also the thermal stability of the bulk sinks for intrinsic point defects. In heavily doped silicon the bulk sinks are related with pairing reactions of the dopant atoms with the generated intrinsic point defects or related with enhanced recombination of vacancies and self-interstitials at extrinsic point defects. The obtained theoretical results are correlated with published experimental data on boron-and phosphorus-doped silicon and are illustrated with observations obtained by irradiating cross-section transmission electron microscopy samples of wafer with highly doped surface layers. (orig.)

  8. Defect production due to quenching through a multicritical point

    International Nuclear Information System (INIS)

    Divakaran, Uma; Mukherjee, Victor; Dutta, Amit; Sen, Diptiman

    2009-01-01

    We study the generation of defects when a quantum spin system is quenched through a multicritical point by changing a parameter of the Hamiltonian as t/τ, where τ is the characteristic timescale of quenching. We argue that when a quantum system is quenched across a multicritical point, the density of defects (n) in the final state is not necessarily given by the Kibble–Zurek scaling form n∼1/τ dν/(zν+1) , where d is the spatial dimension, and ν and z are respectively the correlation length and dynamical exponent associated with the quantum critical point. We propose a generalized scaling form of the defect density given by n∼1/τ d/(2z 2 ) , where the exponent z 2 determines the behavior of the off-diagonal term of the 2 × 2 Landau–Zener matrix at the multicritical point. This scaling is valid not only at a multicritical point but also at an ordinary critical point

  9. Zirconium - ab initio modelling of point defects diffusion

    International Nuclear Information System (INIS)

    Gasca, Petrica

    2010-01-01

    Zirconium is the main element of the cladding found in pressurized water reactors, under an alloy form. Under irradiation, the cladding elongate significantly, phenomena attributed to the vacancy dislocation loops growth in the basal planes of the hexagonal compact structure. The understanding of the atomic scale mechanisms originating this process motivated this work. Using the ab initio atomic modeling technique we studied the structure and mobility of point defects in Zirconium. This led us to find four interstitial point defects with formation energies in an interval of 0.11 eV. The migration paths study allowed the discovery of activation energies, used as entry parameters for a kinetic Monte Carlo code. This code was developed for calculating the diffusion coefficient of the interstitial point defect. Our results suggest a migration parallel to the basal plane twice as fast as one parallel to the c direction, with an activation energy of 0.08 eV, independent of the direction. The vacancy diffusion coefficient, estimated with a two-jump model, is also anisotropic, with a faster process in the basal planes than perpendicular to them. Hydrogen influence on the vacancy dislocation loops nucleation was also studied, due to recent experimental observations of cladding growth acceleration in the presence of this element [fr

  10. Point defects in platinum

    International Nuclear Information System (INIS)

    Piercy, G.R.

    1960-01-01

    An investigation was made of the mobility and types of point defect introduced in platinum by deformation in liquid nitrogen, quenching into water from 1600 o C, or reactor irradiation at 50 o C. In all cases the activation energy for motion of the defect was determined from measurements of electrical resistivity. Measurements of density, hardness, and x-ray line broadening were also made there applicable. These experiments indicated that the principal defects remaining in platinum after irradiation were single vacant lattice sites and after quenching were pairs of vacant lattice sites. Those present after deformation In liquid nitrogen were single vacant lattice sites and another type of defect, perhaps interstitial atoms. (author)

  11. Thermodynamics of diffusion under pressure and stress: Relation to point defect mechanisms

    International Nuclear Information System (INIS)

    Aziz, M.J.

    1997-01-01

    A thermodynamic formalism is developed for illuminating the predominant point defect mechanism of self- and impurity diffusion in silicon and is used to provide a rigorous basis for point defect-based interpretation of diffusion experiments in biaxially strained epitaxial layers in the Si endash Ge system. A specific combination of the hydrostatic and biaxial stress dependences of the diffusivity is ±1 times the atomic volume, depending upon whether the predominant mechanism involves vacancies or interstitials. Experimental results for Sb diffusion in biaxially strained Si endash Ge films and ab initio calculations of the activation volume for Sb diffusion by a vacancy mechanism are in quantitative agreement with no free parameters. Key parameters are identified that must be measured or calculated for a quantitative test of interstitial-based mechanisms. copyright 1997 American Institute of Physics

  12. Point defect properties of ternary fcc Fe-Cr-Ni alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wróbel, J.S., E-mail: jan.wrobel@inmat.pw.edu.pl [Faculty of Materials Science and Engineering, Warsaw University of Technology, Woloska 141, 02-507 Warsaw (Poland); Nguyen-Manh, D.; Dudarev, S.L. [CCFE, Culham Science Centre, Abingdon, Oxon OX14 3DB (United Kingdom); Kurzydłowski, K.J. [Faculty of Materials Science and Engineering, Warsaw University of Technology, Woloska 141, 02-507 Warsaw (Poland)

    2017-02-15

    Highlights: • Properties of point defects depend on the local atomic environment. • As the degree of chemical order increases, the formation energies increase, too. • Relaxation volumes are larger for the more ordered structures. - Abstract: The properties of point defects in Fe-Cr-Ni alloys are investigated, using density functional theory (DFT), for two alloy compositions, Fe{sub 50}Cr{sub 25}Ni{sub 25} and Fe{sub 55}Cr{sub 15}Ni{sub 30}, assuming various degrees of short-range order. DFT-based Monte Carlo simulations are applied to explore short-range order parameters and generate representative structures of alloys. Chemical potentials for the relevant structures are estimated from the minimum of the substitutional energy at representative atoms sites. Vacancies and 〈1 0 0〉 dumbbells are introduced in the Fe{sub 2}CrNi intermetallic phase as well as in two Fe{sub 55}Cr{sub 15}Ni{sub 30} alloy structures: the disordered and short range-ordered structures, generated using Monte Carlo simulations at 2000 K and 300 K, respectively. Formation energies and relaxation volumes of defects as well as changes of magnetic moments caused by the presence of defects are investigated as functions of the local environment of a defect.

  13. Elastic dipoles of point defects from atomistic simulations

    Science.gov (United States)

    Varvenne, Céline; Clouet, Emmanuel

    2017-12-01

    The interaction of point defects with an external stress field or with other structural defects is usually well described within continuum elasticity by the elastic dipole approximation. Extraction of the elastic dipoles from atomistic simulations is therefore a fundamental step to connect an atomistic description of the defect with continuum models. This can be done either by a fitting of the point-defect displacement field, by a summation of the Kanzaki forces, or by a linking equation to the residual stress. We perform here a detailed comparison of these different available methods to extract elastic dipoles, and show that they all lead to the same values when the supercell of the atomistic simulations is large enough and when the anharmonic region around the point defect is correctly handled. But, for small simulation cells compatible with ab initio calculations, only the definition through the residual stress appears tractable. The approach is illustrated by considering various point defects (vacancy, self-interstitial, and hydrogen solute atom) in zirconium, using both empirical potentials and ab initio calculations.

  14. Characterization of point defects in monolayer arsenene

    Science.gov (United States)

    Liang, Xiongyi; Ng, Siu-Pang; Ding, Ning; Wu, Chi-Man Lawrence

    2018-06-01

    Topological defects that are inevitably found in 2D materials can dramatically affect their properties. Using density functional theory (DFT) calculations and ab initio molecular dynamics (AIMD) method, the structural, thermodynamic, electronic and magnetic properties of six types of typical point defects in arsenene, i.e. the Stone-Wales defect, single and double vacancies and adatoms, were systemically studied. It was found that these defects were all more easily generated in arsenene with lower formation energies than those with graphene and silicene. Stone-Wales defects can be transformed from pristine arsenene by overcoming a barrier of 2.19 eV and single vacancy defects tend to coalesce into double vacancy defects by diffusion. However, a type of adatom defect does not exhibit kinetic stability at room temperature. In addition, SV defects and another type of adatom defect can remarkably affect the electronic and magnetic properties of arsenene, e.g. they can introduce localized states near the Fermi level, as well as a strongly local magnetic moment due to dangling bond and unpaired electron. Furthermore, the simulated scanning tunneling microscopy (STM) and Raman spectroscopy were computed and the types of point defects can be fully characterized by correlating the STM images and Raman spectra to the defective atomistic structures. The results provide significant insights to the effect of defects in arsenene for potential applications, as well as identifications of two helpful tools (STM and Raman spectroscopy) to distinguish the type of defects in arsenene for future experiments.

  15. Point defects dynamics in a stress field

    International Nuclear Information System (INIS)

    Smetniansky de De Grande, Nelida.

    1989-01-01

    The dependence of anisotropic defect diffusion on stress is studied for a hexagonal close packed (hcp) material under irradiation and uniaxially stressed. The diffusion is described as a discrete process of thermally activated jumps. It is shown that the presence of an external stress field enhances the intrinsic anisotropic diffusion, being this variation determined by the defect dipole tensors' symmetry in the equilibrium and saddle point configurations. Also, the point defect diffusion equations to sinks, like edge dislocations and spherical cavities, are solved and the sink strengths are calculated. The conclusion is that the dynamics of the interaction between defects and sinks is controlled by the changes in diffusivity induced by stress fields. (Author) [es

  16. Point defects and precipitation phenomena in Cu-Zn-Al alloys. A study by positrons annihilation

    International Nuclear Information System (INIS)

    Romero, R.; Salgueiro, W.; Somoza, A.; Ahlers, M.H.

    1990-01-01

    Monocrystalline phase Cu-Zn-Al samples in phase β (derived from a bcc structure) were treated with different homogenization thermal treatments, isothermal annealing, and tempering at different time intervals. In this way, point defects are fixed and gamma phase precipitation is induced. The evolution of this technique's characteristic parameters was followed with positron annihilation temporal spectroscopy at room temperature. Owing to the extreme sensitivity of positrons to defects like vacancies, it is possible to study the migration of these defects in detail. It can be seen that the presence of precipitates within the matrix phase modifies the annihilation parameters. Results are discussed as a function of the standard model for positron trapping by defects. (Author). 9 refs., 4 figs

  17. Diffuse scattering from crystals with point defects

    International Nuclear Information System (INIS)

    Andrushevsky, N.M.; Shchedrin, B.M.; Simonov, V.I.; Malakhova, L.F.

    2002-01-01

    The analytical expressions for calculating the intensities of X-ray diffuse scattering from a crystal of finite dimensions and monatomic substitutional, interstitial, or vacancy-type point defects have been derived. The method for the determination of the three-dimensional structure by experimental diffuse-scattering data from crystals with point defects having various concentrations is discussed and corresponding numerical algorithms are suggested

  18. Structure, stability and mobility of point defects in hexagonal close packed zirconium: an ab initio study

    International Nuclear Information System (INIS)

    Verite, G.

    2007-09-01

    This research aims at determining, by means of DFT (density functional theory) electronic structure computations, the structure, the stability, and the mobility of isolated point defects, lack defects, auto-interstitial defects, or small aggregate defects in the compact hexagonal zirconium (hc Zr). After a literature survey on the studied materials and a review of computer simulation methods in material science, the author presents and comments the available results from experiments or simulations on point defects in hc Zr. He presents the growth phenomenon under radiation. Then, he briefly described the computing techniques used in this study, reports the determination of the network parameters and elastic constants of each material. He reports and comments the results obtained with the SIESTA code and with a Monte Carlo kinetic simulation. The different types of defects are investigated

  19. Hardening in AlN induced by point defects

    International Nuclear Information System (INIS)

    Suematsu, H.; Mitchell, T.E.; Iseki, T.; Yano, T.

    1991-01-01

    Pressureless-sintered AIN was neutron irradiated and the hardness change was examined by Vickers indentation. The hardness was increased by irradiation. When the samples were annealed at high temperature, the hardness gradually decreased. Length was also found to increase and to change in the same way as the hardness. A considerable density of dislocation loops still remained, even after the hardness completely recovered to the value of the unirradiated sample. Thus, it is concluded that the hardening in AIN is caused by isolated point defects and small clusters of point defects, rather than by dislocation loops. Hardness was found to increase in proportion to the length change. If the length change is assumed to be proportional to the point defect density, then the curve could be fitted qualitatively to that predicted by models of solution hardening in metals. Furthermore, the curves for three samples irradiated at different temperatures and fluences are identical. There should be different kinds of defect clusters in samples irradiated at different conditions, e.g., the fraction of single point defects is the highest in the sample irradiated at the lowest temperature. Thus, hardening is insensitive to the kind of defects remaining in the sample and is influenced only by those which contribute to length change

  20. Point Defects in Binary Laves-Phase Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Liaw, P.K.; Liu, C.T.; Pike, L.M.; Zhu, J.H.

    1999-01-11

    Point defects in the binary C15 NbCrQ and NbCoz, and C 14 NbFe2 systems on both sides of stoichiometry were studied by both bulk density and X-ray Iattiee parameter measurements. It was found that the vacancy concentrations in these systems after quenching from 1000"C are essentially zero. The constitutional defects on both sides of stoichiometry for these systems were found to be of the anti-site type in comparison with the model predictions. Thermal vacancies exhibiting a maximum at the stoichiometric composition were obtained in NbCr2 Laves phase alloys after quenching from 1400"C. However, there are essentially no thermal vacancies in NbFe2 alloys after quenching from 1300oC. Anti-site hardening was found on both sides of stoichiometry for all the tie Laves phase systems studied, while the thermal vacancies in NbCr2 alloys quenched from 1400'C were found to soften the Laves phase. The anti-site hardening of the Laves phases is similar to that of the B2 compounds and the thermal vacancy softening is unique to the Laves phase. Neither the anti-site defects nor the thermal vacancies affect the fracture toughness of the Laves phases significantly.

  1. Nucleation of point defects in low-fluence ion-implanted GaAs and GaP

    International Nuclear Information System (INIS)

    Wesch, W.; Wendler, E.; Gaertner, K.

    1992-01-01

    The defect production due to low-fluence medium-mass ion implantation into GaAs and GaP at room temperature is investigated. In the parameter region analysed weakly damaged layers are created containing point defects and point defects complexes. Temperature dependent channeling measurements show different structures of the damage produced in the two materials. The depth profiles of the near-edge optical absorption coefficient K sufficiently correspond to the profiles of the primarily produced vacancy concentration N vac . The absorption coefficient K(N vac ) determined from the depth profiles of the two magnitudes shows a square root dependence for GaAs, whereas for GaP a linear dependence is found. The differences observed are discussed in the frame of different nucleation mechanisms. (orig.)

  2. Cellular structure formed by ion-implantation-induced point defect

    International Nuclear Information System (INIS)

    Nitta, N.; Taniwaki, M.; Hayashi, Y.; Yoshiie, T.

    2006-01-01

    The authors have found that a cellular defect structure is formed on the surface of Sn + ion implanted GaSb at a low temperature and proposed its formation mechanism based on the movement of the induced point defects. This research was carried out in order to examine the validity of the mechanism by clarifying the effect of the mobility of the point defects on the defect formation. The defect structure on the GaSb surfaces implanted at cryogenic temperature and room temperature was investigated by scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM) observation. In the sample implanted at room temperature, the sponge-like structure (a pileup of voids) was formed and the cellular structure, as observed at a low temperature, did not develop. This behavior was explained by the high mobility of the vacancies during implantation at room temperature, and the proposed idea that the defect formation process is dominated by the induced point defects was confirmed

  3. Point defect weakened thermal contraction in monolayer graphene.

    Science.gov (United States)

    Zha, Xian-Hu; Zhang, Rui-Qin; Lin, Zijing

    2014-08-14

    We investigate the thermal expansion behaviors of monolayer graphene and three configurations of graphene with point defects, namely the replacement of one carbon atom with a boron or nitrogen atom, or of two neighboring carbon atoms by boron-nitrogen atoms, based on calculations using first-principles density functional theory. It is found that the thermal contraction of monolayer graphene is significantly decreased by point defects. Moreover, the corresponding temperature for negative linear thermal expansion coefficient with the maximum absolute value is reduced. The cause is determined to be point defects that enhance the mechanical strength of graphene and then reduce the amplitude and phonon frequency of the out-of-plane acoustic vibration mode. Such defect weakening of graphene thermal contraction will be useful in nanotechnology to diminish the mismatching or strain between the graphene and its substrate.

  4. Electronic structure of point defects in semiconductors

    International Nuclear Information System (INIS)

    Bruneval, Fabien

    2014-01-01

    This 'Habilitation a diriger des Recherches' memoir presents most of my scientific activities during the past 7 years, in the field of electronic structure calculations of defects in solids. Point defects (vacancies, interstitials, impurities) in functional materials are a key parameter to determine if these materials will actually fill the role they have been assigned or not. Indeed, the presence of defects cannot be avoided when the temperature is increased or when the material is subjected to external stresses, such as irradiation in the nuclear reactors and in artificial satellites with solar radiations. However, in many cases, defects are introduced in the materials on purpose to tune the electronic transport, optical or even magnetic properties. This procedure is called the doping of semiconductors, which is the foundation technique for transistors, diodes, or photovoltaic cells. However, doping is not always straightforward and unexpected features may occur, such as doping asymmetry or Fermi level pinning, which can only be explained by complex phenomena involving different types of defects or complexes of defects. In this context, the calculations of electronic structure ab initio is an ideal tool to complement the experimental observations, to gain the understanding of phenomena at the atomic level, and even to predict the properties of defects. The power of the ab initio calculations comes from their ability to describe any system of electrons and nuclei without any specific adjustment. But although there is a strong need for numerical simulations in this field, the ab initio calculations for defects are still under development as of today. The work presented in this memoir summarizes my contributions to methodological developments on this subject. These developments have followed two main tracks. The first topic is the better understanding of the unavoidable finite size effects. Indeed, defects in semiconductors or insulators are generally present in

  5. Point defect relaxation volumes for copper

    International Nuclear Information System (INIS)

    Miller, K.M.

    1979-11-01

    The methods used for the determination of point defect relaxation volumes are discussed and it is shown that a previous interatomic potential derived for copper is inaccurate and results obtained using it are invalid. A new interatomic potential has been produced for copper and a computer simulation of point and planar defects carried out. A vacancy relaxation volume of -0.33 atomic volumes has been found with interstitial values in the range 1.7 to 2.0 atomic volumes. It is shown that these values in current theories of irradiation induced swelling lead to an anomalously high value for dislocation bias compared with that determined experimentally. (author)

  6. On the Enthalpy and Entropy of Point Defect Formation in Crystals

    Science.gov (United States)

    Kobelev, N. P.; Khonik, V. A.

    2018-03-01

    A standard way to determine the formation enthalpy H and entropy S of point defect formation in crystals consists in the application of the Arrhenius equation for the defect concentration. In this work, we show that a formal use of this method actually gives the effective (apparent) values of these quantities, which appear to be significantly overestimated. The underlying physical reason lies in temperature-dependent formation enthalpy of the defects, which is controlled by temperature dependence of the elastic moduli. We present an evaluation of the "true" H- and S-values for aluminum, which are derived on the basis of experimental data by taking into account temperature dependence of the formation enthalpy related to temperature dependence of the elastic moduli. The knowledge of the "true" activation parameters is needed for a correct calculation of the defect concentration constituting thus an issue of major importance for different fundamental and application issues of condensed matter physics and chemistry.

  7. Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

    Energy Technology Data Exchange (ETDEWEB)

    Kretzer, Ulrich

    2007-12-10

    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

  8. Ab-initio modelling of thermodynamics and kinetics of point defects in indium oxide

    International Nuclear Information System (INIS)

    Agoston, Peter; Klein, Andreas; Albe, Karsten; Erhart, Paul

    2008-01-01

    The electrical and optical properties of indium oxide films strongly vary with the processing parameters. Especially the oxygen partial pressure and temperature determine properties like electrical conductivity, composition and transparency. Since this material owes its remarkable properties like the intrinsic n-type conductivity to its defect chemistry, it is important to understand both, the equilibrium defect thermodynamics and kinetics of the intrinsic point defects. In this contribution we present a defect model based on DFT total energy calculations using the GGA+U method. Further, the nudged elastic band method is employed in order to obtain a set of migration barriers for each defect species. Due to the complicated crystal structure of indium oxide a Kinetic Monte-Carlo algorithm was implemented, which allows to determine diffusion coefficients. The bulk tracer diffusion constant is predicted as a function of oxygen partial pressure, Fermi level and temperature for the pure material

  9. Weyl geometry and the nonlinear mechanics of distributed point defects

    KAUST Repository

    Yavari, A.; Goriely, A.

    2012-01-01

    The residual stress field of a nonlinear elastic solid with a spherically symmetric distribution of point defects is obtained explicitly using methods from differential geometry. The material manifold of a solid with distributed point defects

  10. Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gorge, V.; Migan-Dubois, A. [LGEP, UMR 8507, CNRS, SUPELEC, UPMC, Universite Paris-Sud 11, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex (France); Djebbour, Z., E-mail: zakaria.djebbour@uvsq.fr [LGEP, UMR 8507, CNRS, SUPELEC, UPMC, Universite Paris-Sud 11, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex (France); Department of Physics and Engineering Science, University of Versailles UVSQ, 45 Av. Des Etats Unis, 78035 Versailles (France); Pantzas, K. [Georgia Institute of Technology, GT-Lorraine, 2 rue Marconi, 57 070 Metz (France); UMI 2958 Georgia Tech, CNRS, 2 rue Marconi, 57 070 Metz (France); Gautier, S. [UMI 2958 Georgia Tech, CNRS, 2 rue Marconi, 57 070 Metz (France); LMOPS, UMR 7132, CNRS, University of Metz, Supelec, 2 rue E. Belin, 57 070 Metz (France); Moudakir, T.; Suresh, S. [UMI 2958 Georgia Tech, CNRS, 2 rue Marconi, 57 070 Metz (France); Ougazzaden, A. [Georgia Institute of Technology, GT-Lorraine, 2 rue Marconi, 57 070 Metz (France); UMI 2958 Georgia Tech, CNRS, 2 rue Marconi, 57 070 Metz (France)

    2013-02-01

    Highlights: Black-Right-Pointing-Pointer We have modeled a p-i-n InGaN-based solar cell with gradual bandgap layers. Black-Right-Pointing-Pointer InGaN defects have been modeled by two band tails and one localized energy level. Black-Right-Pointing-Pointer Energetic position and band tail widths have a low effect on device efficiency. Black-Right-Pointing-Pointer The localized defect FWHM has a significant impact on performance. Black-Right-Pointing-Pointer The efficiency drops radically when the defect density is higher than the P-doping. - Abstract: In this paper, we have used simulations to evaluate the impact of the distribution of electrically active defects on the photovoltaic performances of InGaN-based solar cell. The simulations were carried out using Silvaco's ATLAS software. We have modeled a P-GaN/Grad-InGaN/i-In{sub 0.53}Ga{sub 0.47}N/Grad-InGaN/N-ZnO where Grad-InGaN corresponds to an InGaN layer with a graded composition. This layer is inserted to eliminate the band discontinuities at the interface between InGaN and the GaN and ZnO layers. The defects were modeled through the introduction of band tails and a Gaussian distribution of defects in i-InGaN material. We have evaluated the influence of band tail widths as well as the parameters of the Gaussian distribution (i.e. defect density, mean position and standard deviation) on the short-circuit current, the open-circuit voltage and the fill-factor (efficiency) of the solar cell. These results have allowed us to identify key structural parameters useful for the optimization of InGaN solar cells, as well as to give realistic estimates of the performances of such cells.

  11. Point defect balance in epitaxial GaSb

    International Nuclear Information System (INIS)

    Segercrantz, N.; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S.

    2014-01-01

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  12. On the meaning of sink capture efficiency and sink strength for point defects

    International Nuclear Information System (INIS)

    Mansur, L.K.; Wolfer, W.G.

    1982-01-01

    The concepts of sink capture efficiency and sink strength for point defects are central to the theory of point defect reactions in materials undergoing irradiation. Two fundamentally different definitions of the capture efficiency are in current use. The essential difference can be stated simply. The conventional meaning denotes a measure of the loss rate of point defects to sinks per unit mean point defect concentration. A second definition of capture efficiency, introduced recently, gives a measure of the point defect loss rate without normalization to the mean point defect concentration. The relationship between the two capture efficiencies is here derived. By stating the relationship we hope to eliminate confusion caused by comparisons of the two types of capture efficiencies at face value and to provide a method of obtaining one from the other. Internally consistent usage of either of the capture efficiencies leads to the same results for the calculation of measuable quantities, as is required physically. (orig.)

  13. Simulation of the Nonlinear Dose Dependence of Stabilized Point Defects

    International Nuclear Information System (INIS)

    Chen, R; Pagonis, V; Lawless, J L

    2010-01-01

    The dose dependence of the concentration of point defects in alkali-halides as well as other crystals, as exhibited by the dependence of the thermoluminescence (TL), optical absorption and ESR on the dose of non-ionizing UV excitation is studied using numerical simulation. The relevant set of coupled rate equations are first written and plausible sets of trapping parameters are chosen. Instead of using simplifying assumptions previously used for reaching conclusions concerning this dose behavior, exact numerical solutions have now been reached. Depending on the parameters chosen, different dose dependencies are seen. In some cases, linear dose dependence is reached in a broad range. Sublinear dose dependence, close to a D 1/2 dependence when D is the dose of excitation can be reached when retrapping is stronger than trapping in other traps stabilizing the defects. When strong competition between stabilizing traps takes place, an initial linear range is observed followed by strong superlinearity and an approach to saturation. All these behaviors have been observed experimentally in TL measurements as well as ESR and optical absorption in different materials. Similarities and dissimilarities to linear and non-linear dose dependencies obtained experimentally and by simulations when ionizing irradiation is used for excitation are discussed.

  14. Creation of point defects in superconductors. A short review

    International Nuclear Information System (INIS)

    Quere, Yves; Rullier-Albenque, Florence.

    1981-11-01

    Many experiments have been published concerning the radiation damage in superconductors, but relatively few about the mechanisms of defect creation. A short review is presented of what is known on point defect creation in superconductors either by cold-work or by irradiation

  15. Nonlinear elastic longitudinal strain-wave propagation in a plate with nonequilibrium laser-generated point defects

    International Nuclear Information System (INIS)

    Mirzade, Fikret Kh.

    2005-01-01

    The propagation of longitudinal strain wave in a plate with quadratic nonlinearity of elastic continuum was studied in the context of a model that takes into account the joint dynamics of elastic displacements in the medium and the concentration of the nonequilibrium laser-induced point defects. The input equations of the problem are reformulated in terms of only the total displacements of the medium points. In this case, the presence of structural defects manifests itself in the emergence of a delayed response of the system to the propagation of the strain-related perturbations, which is characteristic of media with relaxation or memory. The model equations describing the nonlinear displacement wave were derived with allowance made for the values of the relaxation parameter. The influence of the generation and relaxation of lattice defects on the propagation of this wave was analyzed. It is shown that, for short relaxation times of defects, the strain can propagate in the form of shock fronts. In the case of longer relaxation times, shock waves do not form and the strain wave propagates only in the form of solitary waves or a train of solitons. The contributions of the finiteness of the defect-recombination rate to linear and nonlinear elastic modulus, and spatial dispersion are determined

  16. Point defects in lines in single crystalline phosphorene: directional migration and tunable band gaps.

    Science.gov (United States)

    Li, Xiuling; Ma, Liang; Wang, Dayong; Zeng, Xiao Cheng; Wu, Xiaojun; Yang, Jinlong

    2016-10-20

    Extended line defects in two-dimensional (2D) materials can play an important role in modulating their electronic properties. During the experimental synthesis of 2D materials, line defects are commonly generated at grain boundaries between domains of different orientations. In this work, twelve types of line-defect structures in single crystalline phosphorene are examined by using first-principles calculations. These line defects are typically formed via migration and aggregation of intrinsic point defects, including the Stone-Wales (SW), single or double vacancy (SV or DV) defects. Our calculated results demonstrate that the migration of point defects in phosphorene is anisotropic, for instance, the lowest migration energy barriers are 1.39 (or 0.40) and 2.58 (or 0.49) eV for SW (or SV) defects in zigzag and armchair directions, respectively. The aggregation of point defects into lines is energetically favorable compared with the separated point defects in phosphorene. In particular, the axis of line defects in phosphorene is direction-selective, depending on the composed point defects. The presence of line defects effectively modulates the electronic properties of phosphorene, rendering the defect-containing phosphorene either metallic or semiconducting with a tunable band gap. Of particular interest is the fact that the SV-based line defect can behave as a metallic wire, suggesting a possibility to fabricate a circuit with subnanometer widths in the semiconducting phosphorene for nanoscale electronic application.

  17. Sigma models in the presence of dynamical point-like defects

    International Nuclear Information System (INIS)

    Doikou, Anastasia; Karaiskos, Nikos

    2013-01-01

    Point-like Liouville integrable dynamical defects are introduced in the context of the Landau–Lifshitz and Principal Chiral (Faddeev–Reshetikhin) models. Based primarily on the underlying quadratic algebra we identify the first local integrals of motion, the associated Lax pairs as well as the relevant sewing conditions around the defect point. The involution of the integrals of motion is shown taking into account the sewing conditions.

  18. A computational framework for automation of point defect calculations

    International Nuclear Information System (INIS)

    Goyal, Anuj; Gorai, Prashun; Peng, Haowei

    2017-01-01

    We have developed a complete and rigorously validated open-source Python framework to automate point defect calculations using density functional theory. Furthermore, the framework provides an effective and efficient method for defect structure generation, and creation of simple yet customizable workflows to analyze defect calculations. This package provides the capability to compute widely-accepted correction schemes to overcome finite-size effects, including (1) potential alignment, (2) image-charge correction, and (3) band filling correction to shallow defects. Using Si, ZnO and In2O3 as test examples, we demonstrate the package capabilities and validate the methodology.

  19. Weyl geometry and the nonlinear mechanics of distributed point defects

    KAUST Repository

    Yavari, A.

    2012-09-05

    The residual stress field of a nonlinear elastic solid with a spherically symmetric distribution of point defects is obtained explicitly using methods from differential geometry. The material manifold of a solid with distributed point defects-where the body is stress-free-is a flat Weyl manifold, i.e. a manifold with an affine connection that has non-metricity with vanishing traceless part, but both its torsion and curvature tensors vanish. Given a spherically symmetric point defect distribution, we construct its Weyl material manifold using the method of Cartan\\'s moving frames. Having the material manifold, the anelasticity problem is transformed to a nonlinear elasticity problem and reduces the problem of computing the residual stresses to finding an embedding into the Euclidean ambient space. In the case of incompressible neo-Hookean solids, we calculate explicitly this residual stress field. We consider the example of a finite ball and a point defect distribution uniform in a smaller ball and vanishing elsewhere. We show that the residual stress field inside the smaller ball is uniform and hydrostatic. We also prove a nonlinear analogue of Eshelby\\'s celebrated inclusion problem for a spherical inclusion in an isotropic incompressible nonlinear solid. © 2012 The Royal Society.

  20. Constitutional and thermal point defects in B2 NiAl

    DEFF Research Database (Denmark)

    Korzhavyi, P. A.; Ruban, Andrei; Lozovoi, A. Y.

    2000-01-01

    The formation energies of point defects and the interaction energies of various defect pairs in NiAl are calculated from first principles within an order N, locally self-consistent Green's-function method in conjunction with multipole electrostatic corrections to the atomic sphere approximation...... distance on their sublattice. The dominant thermal defects in Ni-rich and stoichiometric NiAl are calculated to be triple defects. In Al-rich alloys another type of thermal defect dominates, where two Ni vacancies are replaced by one antisite Al atom. As a result, the vacancy concentration decreases...

  1. Point defects and magnetic properties of neutron irradiated MgO single crystal

    Directory of Open Access Journals (Sweden)

    Mengxiong Cao

    2017-05-01

    Full Text Available (100-oriented MgO single crystals were irradiated to introduce point defects with different neutron doses ranging from 1.0×1016 to 1.0×1020 cm-2. The point defect configurations were studied with X-ray diffuse scattering and UV-Vis absorption spectra. The isointensity profiles of X-ray diffuse scattering caused by the cubic and double-force point defects in MgO were theoretically calculated based on the Huang scattering theory. The magnetic properties at different temperature were measured with superconducting quantum interference device (SQUID. The reciprocal space mappings (RSMs of irradiated MgO revealed notable diffuse scattering. The UV-Vis spectra indicated the presence of O Frenkel defects in irradiated MgO. Neutron-irradiated MgO was diamagnetic at room temperature and became ferromagnetic at low temperature due to O Frenkel defects induced by neutron-irradiation.

  2. Point defects behavior in beta Cu-based shape memory alloys

    International Nuclear Information System (INIS)

    Romero, R.; Somoza, A.

    1999-01-01

    A summary of positron annihilation spectroscopy data relating to the point defect behavior after quenching and to thermal equilibrium in β-phase Cu-based shape memory alloys Cu-Zn-Al and Cu-Al-Be is presented. Particular attention is given to the initial concentration of quenched-in vacancies as a function of the quenching temperature, migration of the retained point defects with aging temperature and time, and the vacancy formation and migration energies. (orig.)

  3. Point defect thermodynamics and diffusion in Fe3C: A first-principles study

    International Nuclear Information System (INIS)

    Chao Jiang; Uberuaga, B.P.; Srinivasan, S.G.

    2008-01-01

    The point defect structure of cementite (Fe 3 C) is investigated using a combination of the statistical mechanical Wagner-Schottky model and first-principles calculations within the generalized gradient approximation. Large 128-atom supercells are employed to obtain fully converged point defect formation energies. The present study unambiguously shows that carbon vacancies and octahedral carbon interstitials are the structural defects in C-depleted and C-rich cementite, respectively. The dominant thermal defects in C-depleted and stoichiometric cementite are found to be carbon Frenkel pairs. In C-rich cementite, however, the primary thermal excitations are strongly temperature-dependent: interbranch, Schottky and Frenkel defects dominate successively with increasing temperature. Using the nudged elastic band technique, the migration barriers of major point defects in cementite are also determined and compared with available experiments in the literature

  4. Point-Defect Mediated Bonding of Pt Clusters on (5,5) Carbon Nanotubes

    DEFF Research Database (Denmark)

    Wang, J. G.; Lv, Y. A.; Li, X. N.

    2009-01-01

    The adhesion of various sizes of Pt clusters on the metallic (5,5) carbon nanotubes (CNTs) with and without the point defect has been investigated by means of density functional theory (DFT). The calculations show that the binding energies of Pt-n (n = 1-6) clusters on the defect free CNTs are more......). The stronger orbital hybridization between the Pt atom and the carbon atom shows larger charge transfers on the defective CNTs than on the defect free CNTs, which allows the strong interaction between Pt clusters and CNTs. On the basis of DFT calculations, CNTs with point defect can be used as the catalyst...

  5. Point defects and transport properties in carbides

    International Nuclear Information System (INIS)

    Matzke, Hj.

    1984-01-01

    Carbides of transition metals and of actinides are interesting and technologically important. The transition-metal carbides (or carbonitrides) are extensively being used as hard materials and some of them are of great interest because of the high transition temperature for superconductivity, e.g. 17 K for Nb(C,N). Actinide carbides and carbonitrides, (U,Pu)C and (U,Pu)(C,N) are being considered as promising advanced fuels for liquid metal cooled fast breeder nuclear reactors. Basic interest exists in all these materials because of their high melting points (e.g. 4250 K for TaC) and the unusually broad range of homogeneity of nonstoichiometric compositions (e.g. from UCsub(0.9) to UCsub(1.9) at 2500 K). Interaction of point defects to clusters and short-range ordering have recently been studied with elastic neutron diffraction and diffuse scattering techniques, and calculations of energies of formation and interaction of point defects became available for selected carbides. Diffusion measurements also exist for a number of carbides, in particular for the actinide carbides. The existing knowledge is discussed and summarized with emphasis on informative examples of particular technological relevance. (Auth.)

  6. Study of the point defects formed in cobalt by electron bombardment

    International Nuclear Information System (INIS)

    Sulpice, G.

    1968-12-01

    A study of the point defects formed in cobalt by electron bombardment is presented. The results are compared with those previously obtained for two other ferromagnetic metals of different structure, iron and nickel. In the first part we give a review of the literature concerning the creation of point defects, their contribution to resistivity and their annihilation mode in the three structure types. We then describe the experimental techniques adapted, in particular the study of the resistivity increase during a linear temperature rise. Our investigations concern the following, essential points : the observation of the successive annihilation stages of the point defects formed in pure cobalt, a study of the variations with respect to the doses and energy of the incident particles, and the determination of the annealing kinetics and the corresponding activation energies. The results are finally compared with the various models of point defect annihilation proposed for other metals: none of these interpretations is in perfect agreement with our results. In the case of cobalt we are thus led to modify the model proposed by our laboratory for iron an nickel. The difference between these three metals is explained by the anisotropic character of the cobalt matrix. (author) [fr

  7. Formation Energies of Native Point Defects in Strained-Layer Superlattices (Postprint)

    Science.gov (United States)

    2017-06-05

    potential; bulk materials; total energy calculations; entropy; strained- layer superlattice (SLS) 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF...AFRL-RX-WP-JA-2017-0217 FORMATION ENERGIES OF NATIVE POINT DEFECTS IN STRAINED- LAYER SUPERLATTICES (POSTPRINT) Zhi-Gang Yu...2016 Interim 11 September 2013 – 5 November 2016 4. TITLE AND SUBTITLE FORMATION ENERGIES OF NATIVE POINT DEFECTS IN STRAINED- LAYER SUPERLATTICES

  8. Application of ENDOR-induced electron spin resonance to the study of point defects in solids

    International Nuclear Information System (INIS)

    Niklas, J.R.; Spaeth, J.M.

    1980-01-01

    The technique of ENDOR-induced ESR (EI-ESR) is applied to the investigation of several point defects in insulating crystals. It is shown that the lineshape of the EI-ESR spectrum depends on the ENDOR line used for the experiment. The EI-ESR technique allows the separation of overlapping ESR spectra in the presence of several defects. New applications are the selection of spin states and the determination of relative signs of spin-Hamiltonian parameters, the selection of centre orientations and the assignment of nuclei in complex ENDOR spectra, and the determination of quadrupole interactions which are not resolved in the ENDOR spectrum. (author)

  9. Point defects and irradiation in oxides: simulations at the atomic scale

    International Nuclear Information System (INIS)

    Crocombette, J.P.

    2005-12-01

    The studies done by Jean-Paul Crocombette between 1996 and 2005 in the Service de Recherches de Metallurgie Physique of the Direction de l'Energie Nucleaire in Saclay are presented in this Habilitation thesis. These works were part of the material science researches on the ageing, especially under irradiation, of oxides of interest for the nuclear industry. In this context simulation studies at the atomic scale were performed on two elementary components of ageing under irradiation : point defects and displacement cascades ; using two complementary simulation techniques : ab initio electronic structure calculations and empirical potential molecular dynamics. The first part deals with point defects : self defects (vacancies or interstitials) or hetero-atomic dopants. One first recalls the energetics of such defects in oxides, the specific features of defects calculations and the expected accuracy of these calculations. Then one presents the results obtained on uranium dioxide, oxygen in silver and amorphous silica. The second part tackles the modelling of disintegration recoil nuclei in various?displacement cascades created by crystalline matrices for actinide waste disposal. Cascade calculations give access to the amorphization mechanisms under irradiation of these materials. One thus predicts that the amorphization in zircon takes place directly in the tracks whereas in lanthanum zirconate, the amorphization proceeds through the accumulation of point defects. Finally the prospects of these studies are discussed. (author)

  10. Point defects in ZnO crystals grown by various techniques

    International Nuclear Information System (INIS)

    Čížek, J; Vlček, M; Hruška, P; Lukáč, F; Melikhova, O; Anwand, W; Selim, F; Hugenschmidt, Ch; Egger, W

    2017-01-01

    In the present work point defects in ZnO crystals were characterized by positron lifetime spectroscopy combined with back-diffusion measurement of slow positrons. Defects in ZnO crystals grown by various techniques were compared. Hydrothermally grown ZnO crystals contain defects characterized by lifetime of ≈181 ps. These defects were attributed to Zn vacancies associated with hydrogen. ZnO crystals prepared by other techniques (Bridgman, pressurized melt growth, and seeded chemical vapour transport) exhibit shorter lifetime of ≈165 ps. Positron back-diffusion studies revealed that hydrothermally grown ZnO crystals contain higher density of defects than the crystals grown by other techniques. The lowest concentration of defects was detected in the crystal grown by seeded chemical vapor transport. (paper)

  11. Toward a comprehensive theory of radiation-induced swelling and creep - the point defect concentrations

    International Nuclear Information System (INIS)

    Mansur, L.K.; Yoo, M.H.

    1979-01-01

    The theory of void swelling and irradiation creep is now fairly comprehensive. A unifying concept on which most of this understanding rests is that of the rate theory point defect concentrations. Several basic aspects of this unifying conept are reviewed. These relate to local fluctuations in point defect concentrations produced by cascades, the effects of thermal and radiation-produced divacancies, and the effects of point defect trapping

  12. Dislocations and point defects in hydrostatically compressed crystal

    International Nuclear Information System (INIS)

    Kosevich, A.M.; Tokij, V.V.; Strel'tsov, V.A.

    1978-01-01

    Within the framework of the theory of finite deformations, the elastic fields are considered, which are induced by the sources of internal stresses in a crystal compressed under a high pressure. In the case of a hydrostatically compressed crystal with defects, the use of a variation principle is discussed. Using the smallness of distorsions, the linear theory of elastic fields of defects in the crystal compressed under a high pressure, is developed. An analysis of the main relationships of the theory results in the following conclusion: in a course of the linear approximation the taking into account of the hydrostatic pressure brings to the renorming of the elasticity moduli and to the replacing of the hydrostatic parameters of defects by their values in the compressed crystal. That conclusion allows the results of the elasticity linear theory of the crystal with defects to be used to the full extent

  13. Deformation behaviour induced by point defects near a Cu(0 0 1) surface

    International Nuclear Information System (INIS)

    Said-Ettaoussi, M.; Jimenez-Saez, J.C.; Perez-Martin, A.M.C.; Jimenez-Rodriguez, J.J.

    2004-01-01

    In order to attain a satisfactory understanding of many of the properties of metallic surfaces, it is necessary to take into account the distorting effect of self-interstitials and vacancies. The present work is focused on the study of the behaviour of neighbouring atoms around point defects. The conjugate gradient method with an empiric many-body potential has been used to study the point defect-surface interaction. Point defects have been generated at several depths under a Cu(0 0 1) surface and then the whole system driven to the minimum energy state. The displacement field has been obtained in the vicinity to the defect. An energetic analysis is also carried out calculating formation and migration energies

  14. Effect of point defects on the thermal conductivity of UO2: molecular dynamics simulations

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiang-Yang [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Stanek, Christopher Richard [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Andersson, Anders David Ragnar [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2015-07-21

    The thermal conductivity of uranium dioxide (UO2) fuel is an important materials property that affects fuel performance since it is a key parameter determining the temperature distribution in the fuel, thus governing, e.g., dimensional changes due to thermal expansion, fission gas release rates, etc. [1] The thermal conductivity of UO2 nuclear fuel is also affected by fission gas, fission products, defects, and microstructural features such as grain boundaries. Here, molecular dynamics (MD) simulations are carried out to determine quantitatively, the effect of irradiation induced point defects on the thermal conductivity of UO2, as a function of defect concentrations, for a range of temperatures, 300 – 1500 K. The results will be used to develop enhanced continuum thermal conductivity models for MARMOT and BISON by INL. These models express the thermal conductivity as a function of microstructure state-variables, thus enabling thermal conductivity models with closer connection to the physical state of the fuel [2].

  15. Insight into point defects and impurities in titanium from first principles

    Science.gov (United States)

    Nayak, Sanjeev K.; Hung, Cain J.; Sharma, Vinit; Alpay, S. Pamir; Dongare, Avinash M.; Brindley, William J.; Hebert, Rainer J.

    2018-03-01

    Titanium alloys find extensive use in the aerospace and biomedical industries due to a unique combination of strength, density, and corrosion resistance. Decades of mostly experimental research has led to a large body of knowledge of the processing-microstructure-properties linkages. But much of the existing understanding of point defects that play a significant role in the mechanical properties of titanium is based on semi-empirical rules. In this work, we present the results of a detailed self-consistent first-principles study that was developed to determine formation energies of intrinsic point defects including vacancies, self-interstitials, and extrinsic point defects, such as, interstitial and substitutional impurities/dopants. We find that most elements, regardless of size, prefer substitutional positions, but highly electronegative elements, such as C, N, O, F, S, and Cl, some of which are common impurities in Ti, occupy interstitial positions.

  16. Ab initio study of point defects in magnesium oxide

    International Nuclear Information System (INIS)

    Gilbert, C. A.; Kenny, S. D.; Smith, R.; Sanville, E.

    2007-01-01

    Energetics of a variety of point defects in MgO have been considered from an ab initio perspective using density functional theory. The considered defects are isolated Schottky and Frenkel defects and interstitial pairs, along with a number of Schottky defects and di-interstitials. Comparisons were made between the density functional theory results and results obtained from empirical potential simulations and these generally showed good agreement. Both methodologies predicted the first nearest neighbor Schottky defects to be the most energetically favorable of the considered Schottky defects and that the first, second, and fifth nearest neighbor di-interstitials were of similar energy and were favored over the other di-interstitial configurations. Relaxed structures of the defects were analyzed, which showed that empirical potential simulations were accurately predicting the displacements of atoms surrounding di-interstitials, but were overestimating O atom displacement for Schottky defects. Transition barriers were computed for the defects using the nudged elastic band method. Vacancies and Schottky defects were found to have relatively high energy barriers, the majority of which were over 2 eV, in agreement with conclusions reached using empirical potentials. The lowest barriers for di-interstitial transitions were found to be for migration into a first nearest neighbor configuration. Charges were calculated using a Bader analysis and this found negligible charge transfer during the defect transitions and only small changes in the charges on atoms surrounding defects, indicating why fixed charge models work as well as they do

  17. On the diffusion process of irradiation-induced point defects in the stress field of a moving dislocation

    International Nuclear Information System (INIS)

    Steinbach, E.

    1987-01-01

    The cellular model of a dislocation is used for an investigation of the time-dependent diffusion process of irradiation-induced point defects interacting with the stress field of a moving dislocation. An analytic solution is given taking into account the elastic interaction due to the first-order size effect and the stress-induced interaction, the kinematic interaction due to the dislocation motion as well as the presence of secondary neutral sinks. The results for the space and time-dependent point defect concentration, represented in terms of Mathieu-Bessel and Mathieu-Hankel functions, emphasize the influence of the parameters which have been taken into consideration. Proceeding from these solutions, formulae for the diffusion flux reaching unit length of the dislocation, which plays an important role with regard to void swelling and irradiation-induced creep, are derived

  18. The role of point defect clusters in reactor pressure vessel embrittlement

    International Nuclear Information System (INIS)

    Stoller, R.E.

    1993-01-01

    Radiation-induced point defect clusters (PDC) are a plausible source of matrix hardening in reactor pressure vessel (RPV) steels in addition to copper-rich precipitates. These PDCs can be of either interstitial or vacancy type, and could exist in either 2 or 3-D shapes, e.g. small loops, voids, or stacking fault tetrahedra. Formation and evolution of PDCs are primarily determined by displacement damage rate and irradiation temperature. There is experimental evidence that size distributions of these clusters are also influenced by impurities such as copper. A theoretical model has been developed to investigate potential role of PDCs in RPV embrittlement. The model includes a detailed description of interstitial cluster population; vacancy clusters are treated in a more approximate fashion. The model has been used to examine a broad range of irradiation and material parameters. Results indicate that magnitude of hardening increment due to these clusters can be comparable to that attributed to copper precipitates. Both interstitial and vacancy type defects contribute to this hardening, with their relative importance determined by the specific irradiation conditions

  19. Point defect engineering strategies to retard phosphorous diffusion in germanium

    KAUST Repository

    Tahini, H. A.; Chroneos, Alexander I.; Grimes, Robin W.; Schwingenschlö gl, Udo; Bracht, Hartmut A.

    2013-01-01

    The diffusion of phosphorous in germanium is very fast, requiring point defect engineering strategies to retard it in support of technological application. Density functional theory corroborated with hybrid density functional calculations are used to investigate the influence of the isovalent codopants tin and hafnium in the migration of phosphorous via the vacancy-mediated diffusion process. The migration energy barriers for phosphorous are increased significantly in the presence of oversized isovalent codopants. Therefore, it is proposed that tin and in particular hafnium codoping are efficient point defect engineering strategies to retard phosphorous migration. © the Owner Societies 2013.

  20. Study of point defects in pure iron by means of electrical resistivity

    International Nuclear Information System (INIS)

    Minier-Cassayre, C.

    1965-04-01

    In the first part of this work, after having reviewed the production, observation and the annealing of point defects In metals, we resume the present state of research. In the second part, we explain the techniques we have employed to produce point defects at low temperatures: irradiation, quenching and cold-work; and go on to the study of their migration and annealing. The experimental results obtained for pure iron and for iron containing certain impurities are presented in the third part. In the fourth part we suggest a model which explains the different stages of annealing observed, and their properties. We then compare the energies of interaction between point defects with the values deduced from the theory of elasticity. (author) [fr

  1. Defect production in ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Zinkle, S.J. [Oak Ridge National Lab., TN (United States); Kinoshita, C. [Kyushu Univ. (Japan)

    1997-08-01

    A review is given of several important defect production and accumulation parameters for irradiated ceramics. Materials covered in this review include alumina, magnesia, spinel silicon carbide, silicon nitride, aluminum nitride and diamond. Whereas threshold displacement energies for many ceramics are known within a reasonable level of uncertainty (with notable exceptions being AIN and Si{sub 3}N{sub 4}), relatively little information exists on the equally important parameters of surviving defect fraction (defect production efficiency) and point defect migration energies for most ceramics. Very little fundamental displacement damage information is available for nitride ceramics. The role of subthreshold irradiation on defect migration and microstructural evolution is also briefly discussed.

  2. Imaging atomic-level random walk of a point defect in graphene

    Science.gov (United States)

    Kotakoski, Jani; Mangler, Clemens; Meyer, Jannik C.

    2014-05-01

    Deviations from the perfect atomic arrangements in crystals play an important role in affecting their properties. Similarly, diffusion of such deviations is behind many microstructural changes in solids. However, observation of point defect diffusion is hindered both by the difficulties related to direct imaging of non-periodic structures and by the timescales involved in the diffusion process. Here, instead of imaging thermal diffusion, we stimulate and follow the migration of a divacancy through graphene lattice using a scanning transmission electron microscope operated at 60 kV. The beam-activated process happens on a timescale that allows us to capture a significant part of the structural transformations and trajectory of the defect. The low voltage combined with ultra-high vacuum conditions ensure that the defect remains stable over long image sequences, which allows us for the first time to directly follow the diffusion of a point defect in a crystalline material.

  3. Point Defects in Two-Dimensional Layered Semiconductors: Physics and Its Applications

    Science.gov (United States)

    Suh, Joonki

    Recent advances in material science and semiconductor processing have been achieved largely based on in-depth understanding, efficient management and advanced application of point defects in host semiconductors, thus finding the relevant techniques such as doping and defect engineering as a traditional scientific and technological solution. Meanwhile, two- dimensional (2D) layered semiconductors currently draw tremendous attentions due to industrial needs and their rich physics at the nanoscale; as we approach the end of critical device dimensions in silicon-based technology, ultra-thin semiconductors have the potential as next- generation channel materials, and new physics also emerges at such reduced dimensions where confinement of electrons, phonons, and other quasi-particles is significant. It is therefore rewarding and interesting to understand and redefine the impact of lattice defects by investigating their interactions with energy/charge carriers of the host matter. Potentially, the established understanding will provide unprecedented opportunities for realizing new functionalities and enhancing the performance of energy harvesting and optoelectronic devices. In this thesis, multiple novel 2D layered semiconductors, such as bismuth and transition- metal chalcogenides, are explored. Following an introduction of conventional effects induced by point defects in semiconductors, the related physics of electronically active amphoteric defects is revisited in greater details. This can elucidate the complication of a two-dimensional electron gas coexisting with the topological states on the surface of bismuth chalcogenides, recently suggested as topological insulators. Therefore, native point defects are still one of the keys to understand and exploit topological insulators. In addition to from a fundamental science point of view, the effects of point defects on the integrated thermal-electrical transport, as well as the entropy-transporting process in

  4. Photoluminescence as a tool for characterizing point defects in semiconductors

    Science.gov (United States)

    Reshchikov, Michael

    2012-02-01

    Photoluminescence is one of the most powerful tools used to study optically-active point defects in semiconductors, especially in wide-bandgap materials. Gallium nitride (GaN) and zinc oxide (ZnO) have attracted considerable attention in the last two decades due to their prospects in optoelectronics applications, including blue and ultraviolet light-emitting devices. However, in spite of many years of extensive studies and a great number of publications on photoluminescence from GaN and ZnO, only a few defect-related luminescence bands are reliably identified. Among them are the Zn-related blue band in GaN, Cu-related green band and Li-related orange band in ZnO. Numerous suggestions for the identification of other luminescence bands, such as the yellow band in GaN, or green and yellow bands in ZnO, do not stand up under scrutiny. In these conditions, it is important to classify the defect-related luminescence bands and find their unique characteristics. In this presentation, we will review the origin of the major luminescence bands in GaN and ZnO. Through simulations of the temperature and excitation intensity dependences of photoluminescence and by employing phenomenological models we are able to obtain important characteristics of point defects such as carrier capture cross-sections for defects, concentrations of defects, and their charge states. These models are also used to find the absolute internal quantum efficiency of photoluminescence and obtain information about nonradiative defects. Results from photoluminescence measurements will be compared with results of the first-principle calculations, as well as with the experimental data obtained by other techniques such as positron annihilation spectroscopy, deep-level transient spectroscopy, and secondary ion mass spectrometry.

  5. Fundamental investigation of point defect interactions in FE-CR alloys

    International Nuclear Information System (INIS)

    Wirth, B.D.; Lee, H.J.; Wong, K.

    2008-01-01

    Full text of publication follows. Fe-Cr alloys are a leading candidate material for structural applications in Generation TV and fusion reactors, and there is a relatively large database on their irradiation performance. However, complete understanding of the response of Fe-Cr alloys to intermediate-to-high temperature irradiation, including the radiation induced segregation of Cr, requires knowledge of point defect and point defect cluster interactions with Cr solute atoms and impurities. We present results from a hierarchical multi-scale modelling approach of defect cluster behaviour in Fe-Cr alloys. The modelling includes ab initio electronic structure calculations performed using the VASP code with projector-augmented electron wave functions using PBE pseudo-potentials and a collinear treatment of magnetic spins, molecular dynamics using semi-empirical Finnic-Sinclair type potentials, and kinetic Monte Carlo simulations of coupled defect and Cr transport responsible for microstructural evolution. The modelling results are compared to experimental observations in both binary Fe-Cr and more complex ferritic-martensitic alloys, and provide a basis for understanding a dislocation loop evolution and the observations of Cr enrichment and depletion at grain boundaries in various irradiation experiments. (authors)

  6. Study of point defects in bismuth

    International Nuclear Information System (INIS)

    Bois, P.

    1987-03-01

    Single crystalline samples of bismuth, pure and n or p - doped by adding tellurium or tin, were electron irradiated at low temperature (4.2 K and 20 K). In the energy range 0.7 - 2.5 MeV, a displacement threshold energy of 13 eV and an athermal recombination volume of 150 atomic volumes were determined. Joint measurements of resistivity, magnetotransport and positron annihilation enabled to precised the nature of the annealing stages: 40-50 K, free migration of interstitials; 90-120 K long range migration of vacancy. Point defects have according to their nature a different effect on the electronic properties of bismuth: isolated Frenkel pairs are globally donnors with a charge of + 0.16 e- and the vacancy is donnor, which seems to attribute to it a negative formation volume. A simple model with non-deformating bands is no longer sufficient to explain the behaviour under irradiation: one has to take into account an acceptor level with a charge of - 0,27 e-, linked to the cascade-type defects and resonating with the valence band. It's position in the band overlap and it's width (8 meV) could be precised. In first approximation this coupling with less mobile carriers does not affect the simple additive rule which exists for relaxation times. Some yet obscure magnetic properties seem to be linked to this defect level [fr

  7. Change of elastic constants induced by point defects in hop crystals

    International Nuclear Information System (INIS)

    Tome, C.

    1979-10-01

    An approximate model is developed to calculate the change of elastic constants induced by point defects in hcp metals, supposed the defect configuration is known. General expressions relating the change of elastic moduli to the final atomic coordinates and to the defect force field are derived using the specific symmetry of the defect. Explicit calculations are done for Mg. The predicted change of elastic moduli turns out to be negative for vacancies and trigonal interstitials while for hexagonal interstitials a positive change is predicted. Compatibility with experimental data would suggest that the trigonal configuration is the stable one. (author)

  8. Point defects in thorium nitride: A first-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Pérez Daroca, D., E-mail: pdaroca@tandar.cnea.gov.ar [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (Argentina); Llois, A.M. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (Argentina); Mosca, H.O. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Instituto de Tecnología Jorge A. Sabato, UNSAM-CNEA (Argentina)

    2016-11-15

    Thorium and its compounds (carbides and nitrides) are being investigated as possible materials to be used as nuclear fuels for Generation-IV reactors. As a first step in the research of these materials under irradiation, we study the formation energies and stability of point defects in thorium nitride by means of first-principles calculations within the framework of density functional theory. We focus on vacancies, interstitials, Frenkel pairs and Schottky defects. We found that N and Th vacancies have almost the same formation energy and that the most energetically favorable defects of all studied in this work are N interstitials. These kind of results for ThN, to the best authors' knowledge, have not been obtained previously, neither experimentally, nor theoretically.

  9. Point defects in thorium nitride: A first-principles study

    International Nuclear Information System (INIS)

    Pérez Daroca, D.; Llois, A.M.; Mosca, H.O.

    2016-01-01

    Thorium and its compounds (carbides and nitrides) are being investigated as possible materials to be used as nuclear fuels for Generation-IV reactors. As a first step in the research of these materials under irradiation, we study the formation energies and stability of point defects in thorium nitride by means of first-principles calculations within the framework of density functional theory. We focus on vacancies, interstitials, Frenkel pairs and Schottky defects. We found that N and Th vacancies have almost the same formation energy and that the most energetically favorable defects of all studied in this work are N interstitials. These kind of results for ThN, to the best authors' knowledge, have not been obtained previously, neither experimentally, nor theoretically.

  10. Point defects in cubic boron nitride after neutron irradiation

    International Nuclear Information System (INIS)

    Atobe, Kozo; Honda, Makoto; Ide, Munetoshi; Yamaji, Hiromichi; Matsukawa, Tokuo; Fukuoka, Noboru; Okada, Moritami; Nakagawa, Masuo.

    1993-01-01

    The production of point defects induced by reactor neutrons and the thermal behavior of defects in sintered cubic boron nitride are investigated using the optical absorption and electron spin resonance (ESR) methods. A strong structureless absorption over the visible region was observed after fast neutron irradiation to a dose of 5.3 x 10 16 n/cm 2 (E > 0.1 MeV) at 25 K. This specimen also shows an ESR signal with g-value 2.006 ± 0.001, which can be tentatively identified as an electron trapped in a nitrogen vacancy. On examination of the thermal decay of the signal, the activation energy for recovery of the defects was determined to be about 1.79 eV. (author)

  11. PyCDT: A Python toolkit for modeling point defects in semiconductors and insulators

    Science.gov (United States)

    Broberg, Danny; Medasani, Bharat; Zimmermann, Nils E. R.; Yu, Guodong; Canning, Andrew; Haranczyk, Maciej; Asta, Mark; Hautier, Geoffroy

    2018-05-01

    Point defects have a strong impact on the performance of semiconductor and insulator materials used in technological applications, spanning microelectronics to energy conversion and storage. The nature of the dominant defect types, how they vary with processing conditions, and their impact on materials properties are central aspects that determine the performance of a material in a certain application. This information is, however, difficult to access directly from experimental measurements. Consequently, computational methods, based on electronic density functional theory (DFT), have found widespread use in the calculation of point-defect properties. Here we have developed the Python Charged Defect Toolkit (PyCDT) to expedite the setup and post-processing of defect calculations with widely used DFT software. PyCDT has a user-friendly command-line interface and provides a direct interface with the Materials Project database. This allows for setting up many charged defect calculations for any material of interest, as well as post-processing and applying state-of-the-art electrostatic correction terms. Our paper serves as a documentation for PyCDT, and demonstrates its use in an application to the well-studied GaAs compound semiconductor. We anticipate that the PyCDT code will be useful as a framework for undertaking readily reproducible calculations of charged point-defect properties, and that it will provide a foundation for automated, high-throughput calculations.

  12. Multiscale Modeling of Point and Line Defects in Cubic Lattices

    National Research Council Canada - National Science Library

    Chung, P. W; Clayton, J. D

    2007-01-01

    .... This multiscale theory explicitly captures heterogeneity in microscopic atomic motion in crystalline materials, attributed, for example, to the presence of various point and line lattice defects...

  13. Point defects in GaAs and other semiconductors

    International Nuclear Information System (INIS)

    Ehrhart, P.; Karsten, K.; Pillukat, A.

    1993-01-01

    In order to understand the properties of intrinsic point defects and their interactions at high defect concentrations GaAs wafers were irradiated at 4.5 K with 3 MeV electrons up to a dose of 4 · 10 19 e - /cm 2 . The irradiated samples were investigated by X-ray Diffraction and optical absorption spectroscopy. The defect production increases linearly with irradiation dose and characteristic differences are observed for the two sublattices. The Ga-Frenkel pairs are strongly correlated and are characterized by much larger lattice relaxations (V rel = 2--3 atomic volumes) as compared to the As-Frenkel pairs (V rel ∼1 at. vol.). The dominating annealing stage around 300 K is attributed to the mobility of the Ga interstitial atoms whereas the As-interstitial atoms can recombine with their vacancies only around 500 K. These results are compared to those for InP, ZnSe and Ge. Implications for the understanding of the damage after ion irradiation and implantation are discussed

  14. Atomistic simulation of the point defects in TaW ordered alloy

    Indian Academy of Sciences (India)

    atom method (MAEAM), the formation, migration and activation energies of the point defects for six-kind migration mechanisms in B2-type TaW alloy have been investigated. The results showed that the anti-site defects TaW and WTa were easier to form than Ta and W vacancies owing to their lower formation energies.

  15. Recombination via point defects and their complexes in solar silicon

    Energy Technology Data Exchange (ETDEWEB)

    Peaker, A.R.; Markevich, V.P.; Hamilton, B. [Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Parada, G.; Dudas, A.; Pap, A. [Semilab, 2 Prielle Kornelia Str, 1117 Budapest (Hungary); Don, E. [Semimetrics, PO Box 36, Kings Langley, Herts WD4 9WB (United Kingdom); Lim, B.; Schmidt, J. [Institute for Solar Energy Research (ISFH) Hamlen, 31860 Emmerthal (Germany); Yu, L.; Yoon, Y.; Rozgonyi, G. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States)

    2012-10-15

    Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically <10{sup 10} cm{sup -3}). Consequently, in integrated circuit technologies using such material, electrically active inadvertent impurities and structural defects are rarely detectable. The quest for cheap photovoltaic cells has led to the use of less pure silicon, multi-crystalline material, and low cost processing for solar applications. Cells made in this way have significant extrinsic recombination mechanisms. In this paper we review recombination involving defects and impurities in single crystal and in multi-crystalline solar silicon. Our main techniques for this work are recombination lifetime mapping measurements using microwave detected photoconductivity decay and variants of deep level transient spectroscopy (DLTS). In particular, we use Laplace DLTS to distinguish between isolated point defects, small precipitate complexes and decorated extended defects. We compare the behavior of some common metallic contaminants in solar silicon in relation to their effect on carrier lifetime and cell efficiency. Finally, we consider the role of hydrogen passivation in relation to transition metal contaminants, grain boundaries and dislocations. We conclude that recombination via point defects can be significant but in most multi-crystalline material the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Defect production in nonlinear quench across a quantum critical point.

    Science.gov (United States)

    Sen, Diptiman; Sengupta, K; Mondal, Shreyoshi

    2008-07-04

    We show that the defect density n, for a slow nonlinear power-law quench with a rate tau(-1) and an exponent alpha>0, which takes the system through a critical point characterized by correlation length and dynamical critical exponents nu and z, scales as n approximately tau(-alphanud/(alphaznu+1)) [n approximately (alphag((alpha-1)/alpha)/tau)(nud/(znu+1))] if the quench takes the system across the critical point at time t=0 [t=t(0) not = 0], where g is a nonuniversal constant and d is the system dimension. These scaling laws constitute the first theoretical results for defect production in nonlinear quenches across quantum critical points and reproduce their well-known counterpart for a linear quench (alpha=1) as a special case. We supplement our results with numerical studies of well-known models and suggest experiments to test our theory.

  17. Absorption and atom mobility in electric field: point defect role in glasses

    International Nuclear Information System (INIS)

    Serruys, Y.; Vigouroux, J.P.

    1986-10-01

    During the surface analysis of dielectric materials, the impinging ionising particles induce point defects localised in the band gap and build an electrical charge. The electric field created by the charged defects modifies the physico-chemical properties of surface and bulk. We show that the fundamental study of defects allows a better understanding of technological phenomena such as dielectric breakdown, fracture and diffusion [fr

  18. Mobility of point defects induced by subthreshold collisions

    International Nuclear Information System (INIS)

    Tenenbaum, A.; Nguyen Van Doan

    1976-01-01

    The effect of thermal vibrations on atomic collision focusing was studied with the view to demonstrate that such collisions may induce point defect migration through the crystal. The persistence of the phenomenon of focused atomic collisions in a crystal at thermal equilibrium was studied, using a computer simulation by the Molecular Dynamics Technique. In the temperature range (0 to 500K) matter and momentum transfers in c.f.c. crystals proceed mainly by focused collisions along and directions. Their contribution to the induced migration of radiation defects was determined from the threshold energy of every primary able to be involved in the process. As an example, the quantitative model is applied to electron irradiation along the crystallographic directions [fr

  19. Irradiation damage in boron carbide: point defects, clusters and helium bubbles

    International Nuclear Information System (INIS)

    Stoto, T.; Zuppiroli, L.

    1986-06-01

    Boron carbide is a refractory hard and light material of interest in nuclear technology (fission and also fusion). Transmission electron microscopy was used to examine the properties of radiation induced damage. Firstly, the production of point defects and their clustering was studied in samples irradiated by 1 MeV electron in a high voltage electron microscope at selected temperatures from 12 K to 1000 K. Secondly, conventional transmission electron microscopy was used to understand the production of helium bubbles in neutron irradiated boron carbide and their role in the generation of microcracks. Finally, the interaction between point defects and bubbles was also examined

  20. Point Defect Properties of Cd(Zn)Te and TlBr for Room-Temperature Gamma Radiation Detectors

    Science.gov (United States)

    Lordi, Vincenzo

    2013-03-01

    The effects of various crystal defects in CdTe, Cd1-xZnxTe (CZT), and TlBr are critical for their performance as room-temperature gamma radiation detectors. We use predictive first principles theoretical methods to provide fundamental, atomic scale understanding of the defect properties of these materials to enable design of optimal growth and processing conditions, such as doping, annealing, and stoichiometry. Several recent cases will be reviewed, including (i) accurate calculations of the thermodynamic and electronic properties of native point defects and point defect complexes in CdTe and CZT; (ii) the effects of Zn alloying on the native point defect properties of CZT; (iii) point defect diffusion and binding related to Te clustering in Cd(Zn)Te; (iv) the profound effect of native point defects--principally vacancies--on the intrinsic material properties of TlBr, particularly electronic and ionic conductivity; (v) tailored doping of TlBr to independently control the electronic and ionic conductivity; and (vi) the effects of metal impurities on the electronic properties and device performance of TlBr detectors. Prepared by LLNL under Contract DE-AC52-07NA27344 with support from the National Nuclear Security Administration Office of Nonproliferation and Verification Research and Development NA-22.

  1. Summary Report of the Technical Meeting on Primary Radiation Damage: From Nuclear Reaction to Point Defects

    International Nuclear Information System (INIS)

    Stoller, R. E.; Nordlund, K.; Simakov, S.P.

    2012-11-01

    The Meeting was convened to bring together the experts from both the nuclear data and materials research communities because of their common objective of accurately characterizing irradiation environments and resulting material damage. The meeting demonstrated that significant uncertainties remain regarding both the status of nuclear data and the use of these data by the materials modeling community to determine the primary damage state obtained in irradiated materials. At the conclusion of the meeting, the participants agreed that there is clear motivation to initiate a CRP that engages participants from the nuclear data and materials research communities. The overall objective of this CRP would be to determine the best possible parameter (or a few parameters) for correlating damage from irradiation facilities with very different particle types and energy spectra, including fission and fusion reactors, charged particle accelerators, and spallation irradiation facilities. Regarding progress achieved during the last decade in the atomistic simulation of primary defects in crystalline materials, one of the essential and quantitative outcomes from the CRP is expected to be cross sections for point defects left after recoil cascade quenching. (author)

  2. The role of point defects and defect complexes in silicon device processing. Summary report and papers

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B.; Tan, T.Y.

    1994-08-01

    This report is a summary of a workshop hold on August 24--26, 1992. Session 1 of the conference discussed characteristics of various commercial photovoltaic silicon substrates, the nature of impurities and defects in them, and how they are related to the material growth. Session 2 on point defects reviewed the capabilities of theoretical approaches to determine equilibrium structure of defects in the silicon lattice arising from transitional metal impurities and hydrogen. Session 3 was devoted to a discussion of the surface photovoltaic method for characterizing bulk wafer lifetimes, and to detailed studies on the effectiveness of various gettering operations on reducing the deleterious effects of transition metals. Papers presented at the conference are also included in this summary report.

  3. The effect of loading methods and parameters on defect detection in digital shearography

    Science.gov (United States)

    Yang, Fu; Ye, Xingchen; Qiu, Zisheng; Zhang, Borui; Zhong, Ping; Liang, ZhiYong; Sun, Zeyu; Zhu, Shu

    Digital Shearography Speckle Pattern Interferometry (DSSPI) is a non-destructive testing technique, which has a wide range of applications in industrial field due to the merits of non-contact, fast response, full-field measurement and high sensitivity. However, in the real application, the loading methods and parameters usually depend on the experience of the operator, which affect the effectiveness and accuracy of the test. Based on this background and the principle of DSSPI, a model using finite element analysis software and Matlab is established to simulate the defects detections of aluminum plate and composite laminates under different loading conditions. The simulation covers loading methods, shearing direction, shearing amount, loading intensity, defect size, defect depth and defect position. In order to quantify the testing effect, a parameter named the deviation D is first defined. And through the parameter D, the simulation system can evaluate the system detection ability. The work in this paper can provide systematic guidance for the choice of loading methods and parameters in the real DSSPI experiment system.

  4. Point-Defect Nature of the Ultraviolet Absorption Band in AlN

    Science.gov (United States)

    Alden, D.; Harris, J. S.; Bryan, Z.; Baker, J. N.; Reddy, P.; Mita, S.; Callsen, G.; Hoffmann, A.; Irving, D. L.; Collazo, R.; Sitar, Z.

    2018-05-01

    We present an approach where point defects and defect complexes are identified using power-dependent photoluminescence excitation spectroscopy, impurity data from SIMS, and density-functional-theory (DFT)-based calculations accounting for the total charge balance in the crystal. Employing the capabilities of such an experimental computational approach, in this work, the ultraviolet-C absorption band at 4.7 eV, as well as the 2.7- and 3.9-eV luminescence bands in AlN single crystals grown via physical vapor transport (PVT) are studied in detail. Photoluminescence excitation spectroscopy measurements demonstrate the relationship between the defect luminescent bands centered at 3.9 and 2.7 eV to the commonly observed absorption band centered at 4.7 eV. Accordingly, the thermodynamic transition energy for the absorption band at 4.7 eV and the luminescence band at 3.9 eV is estimated at 4.2 eV, in agreement with the thermodynamic transition energy for the CN- point defect. Finally, the 2.7-eV PL band is the result of a donor-acceptor pair transition between the VN and CN point defects since nitrogen vacancies are predicted to be present in the crystal in concentrations similar to carbon-employing charge-balance-constrained DFT calculations. Power-dependent photoluminescence measurements reveal the presence of the deep donor state with a thermodynamic transition energy of 5.0 eV, which we hypothesize to be nitrogen vacancies in agreement with predictions based on theory. The charge state, concentration, and type of impurities in the crystal are calculated considering a fixed amount of impurities and using a DFT-based defect solver, which considers their respective formation energies and the total charge balance in the crystal. The presented results show that nitrogen vacancies are the most likely candidate for the deep donor state involved in the donor-acceptor pair transition with peak emission at 2.7 eV for the conditions relevant to PVT growth.

  5. Loop Growth and Point-Defect Profiles during HVEM Irradiation

    DEFF Research Database (Denmark)

    Leffers, Torben; Singh, Bachu Narain

    1979-01-01

    The point-defect profile in a thin foil is included in the model for the growth of dislocation loops during HVEM irradiation suggested by Kiritani, Yoshida, Takata, and Maehara, and the possible effect of divacancies is discussed. It is found that there is a fairly wide transition range between...

  6. Spectral dependence of point defect production by x rays in RbBr

    International Nuclear Information System (INIS)

    Brown, F.C.; Heald, S.M.; Jiang, D.; Brewe, D.L.; Kim, K.H.; Stern, E.A.

    1999-01-01

    F-center formation by monochromatic x rays has been studied above and below the bromine and rubidium K-absorption edges in crystals of RbBr. The x-ray beam from a double silicon crystal monochromator on an undulator at the Advanced Photon Source was used to produce these point defects, which were detected by a sensitive laser-induced luminescence method. Experiments were carried out over a wide range of monochromatic x-ray intensity, with emphasis on the nearly linear initial slope of defect formation with exposure. No significant increase in F-center formation efficiency was found upon crossing the bromine K edge, which indicates that additional Auger-cascade mechanisms do not appreciably add to the usual multiple ionization electron-hole recombination processes known to generate point defects. copyright 1999 The American Physical Society

  7. Point-Defect Mediated Bonding of Pt Clusters on (5,5) Carbon Nanotubes

    DEFF Research Database (Denmark)

    Wang, J. G.; Lv, Y. A.; Li, X. N.

    2009-01-01

    The adhesion of various sizes of Pt clusters on the metallic (5,5) carbon nanotubes (CNTs) with and without the point defect has been investigated by means of density functional theory (DFT). The calculations show that the binding energies of Pt-n (n = 1-6) clusters on the defect free CNTs are mo...

  8. Prediction of high-temperature point defect formation in TiO2 from combined ab initio and thermodynamic calculations

    International Nuclear Information System (INIS)

    He, J.; Behera, R.K.; Finnis, M.W.; Li, X.; Dickey, E.C.; Phillpot, S.R.; Sinnott, S.B.

    2007-01-01

    A computational approach that integrates ab initio electronic structure and thermodynamic calculations is used to determine point defect stability in rutile TiO 2 over a range of temperatures, oxygen partial pressures and stoichiometries. Both donors (titanium interstitials and oxygen vacancies) and acceptors (titanium vacancies) are predicted to have shallow defect transition levels in the electronic-structure calculations. The resulting defect formation energies for all possible charge states are then used in thermodynamic calculations to predict the influence of temperature and oxygen partial pressure on the relative stabilities of the point defects. Their ordering is found to be the same as temperature increases and oxygen partial pressure decreases: titanium vacancy → oxygen vacancy → titanium interstitial. The charges on these defects, however, are quite sensitive to the Fermi level. Finally, the combined formation energies of point defect complexes, including Schottky, Frenkel and anti-Frenkel defects, are predicted to limit the further formation of point defects

  9. Correlation of point defects in CdZnTe with charge transport:application to room-temperature X-ray and gamma-ray detectors. Final Technical Report

    International Nuclear Information System (INIS)

    Giles, Nancy C.

    2003-01-01

    The primary goal of this project has been to characterize and identify point defects (e.g., impurities, vacancies, vacancy-impurity complexes, etc.) in CdZnTe and determine the mechanisms by which these defects influence the carrier μτproducts. Special attention is given to the role of shallow donors, shallow acceptors, and deeper acceptors. There are two experimental focus areas in the project: (1) liquid-helium photoluminescence (PL) and PL excitation spectroscopy are used to identify and characterize donors and acceptors and to determine zinc molar fraction; and (2) electron paramagnetic resonance (EPR) and photoinduced EPR experiments are performed at liquid-helium temperature to identify paramagnetic point defects and to determine the concentration of these defects. Results from the two experimental focus areas are correlated with detector performance parameters (e.g., electron and hole μτ products), crystal growth conditions, and microstructure analyses

  10. Fatigue crack initiation – The role of point defects

    Czech Academy of Sciences Publication Activity Database

    Polák, Jaroslav; Man, Jiří

    2014-01-01

    Roč. 65, AUG (2014), s. 18-27 ISSN 0142-1123 R&D Projects: GA ČR(CZ) GAP108/10/2371; GA ČR(CZ) GA13-23652S Institutional support: RVO:68081723 Keywords : Fatigue crack initiation * Point defects * Persistent slip band * Intrusion * Extrusion Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 2.275, year: 2014

  11. One-point functions in defect CFT and integrability

    Energy Technology Data Exchange (ETDEWEB)

    Leeuw, Marius de; Kristjansen, Charlotte [The Niels Bohr Institute, University of Copenhagen, Blegdamsvej 17, Copenhagen Ø, DK-2100 (Denmark); Zarembo, Konstantin [NORDITA, KTH Royal Institute of Technology and Stockholm University, Roslagstullsbacken 23, Stockholm, SE-106 91 (Sweden); Department of Physics and Astronomy, Uppsala University, Uppsala, SE-751 08 (Sweden)

    2015-08-19

    We calculate planar tree level one-point functions of non-protected operators in the defect conformal field theory dual to the D3-D5 brane system with k units of the world volume flux. Working in the operator basis of Bethe eigenstates of the Heisenberg XXX{sub 1/2} spin chain we express the one-point functions as overlaps of these eigenstates with a matrix product state. For k=2 we obtain a closed expression of determinant form for any number of excitations, and in the case of half-filling we find a relation with the Néel state. In addition, we present a number of results for the limiting case k→∞.

  12. Formation Energies of Native Point Defects in Strained layer Superlattices (Postprint)

    Science.gov (United States)

    2017-06-05

    1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law , no...Hamiltonian, tight-binding Hamiltonian, and Green’s function techniques to obtain energy levels arising from native point defects (NPDs) in InAs-GaSb and...GaSb systems and 2 designs of InAs-InAs 0.7 Sb 0.3 systems lattice matched to GaSb substrate. The calculated defect levels not only agree well with

  13. Anisotropic diffusion of point defects in a two-dimensional crystal of streptavidin observed by high-speed atomic force microscopy

    International Nuclear Information System (INIS)

    Yamamoto, Daisuke; Uchihashi, Takayuki; Kodera, Noriyuki; Ando, Toshio

    2008-01-01

    The diffusion of individual point defects in a two-dimensional streptavidin crystal formed on biotin-containing supported lipid bilayers was observed by high-speed atomic force microscopy. The two-dimensional diffusion of monovacancy defects exhibited anisotropy correlated with the two crystallographic axes in the orthorhombic C 222 crystal; in the 2D plane, one axis (the a-axis) is comprised of contiguous biotin-bound subunit pairs whereas the other axis (the b-axis) is comprised of contiguous biotin-unbound subunit pairs. The diffusivity along the b-axis is approximately 2.4 times larger than that along the a-axis. This anisotropy is ascribed to the difference in the association free energy between the biotin-bound subunit-subunit interaction and the biotin-unbound subunit-subunit interaction. The preferred intermolecular contact occurs between the biotin-unbound subunits. The difference in the intermolecular binding energy between the two types of subunit pair is estimated to be approximately 0.52 kcal mol -1 . Another observed dynamic behavior of point defects was fusion of two point defects into a larger defect, which occurred much more frequently than the fission of a point defect into smaller defects. The diffusivity of point defects increased with increasing defect size. The fusion and the higher diffusivity of larger defects are suggested to be involved in the mechanism for the formation of defect-free crystals

  14. Effect of reorientation of anisotropic point defects on relaxation of crystal elastic coefficients of high order

    International Nuclear Information System (INIS)

    Topchyan, I.I.; Dokhner, R.D.

    1977-01-01

    The effect of reorientation of anisotropic point defects in uniform fields of elastic stresses on the relaxation of the elastic coefficients of a crystal was investigated in the nonlinear elasticity theory approximation. In calculating the interaction of point defects with elastic-stress fields was taken into consideration. The expression for the relaxations of the elasticity coefficients are obtained in an analytical form. The relaxation of the second-order elasticity coefficients is due to the dimentional interaction of a point defect with an applied-stress field, whereas the relaxation of the higher-order elasticity coefficients is determined both by dimentional and module effects

  15. Design and implementation of a S-parameter wafer defect scanner

    International Nuclear Information System (INIS)

    Naik, P.S.; Beling, C.D.; Fung, S.

    2004-01-01

    We describe the design and implementation of a real-time automated scanning system that gives an S-parameter image of a semiconductor wafer, thus allowing the density of vacancy type defects to be shown as a function of position on the wafer. A conventional 22 Na positron source of 0.5 mm diameter rasters across 5 x 5 cm 2 region of two times per hour in rectilinear motion. Gamma ray energies E γ are processed using a standard HP Ge spectroscopy system and a 14 bit nuclear ADC. Over a period of 1-2 days a high resolution 128 x 128 pixel image with 256 colours (scaled to the S-parameter range) can be formed as a wafer defect map. The system is reliable, interactive and user-friendly (patent pending 2003). (orig.)

  16. Investigation of point defects diffusion in bcc uranium and U–Mo alloys

    International Nuclear Information System (INIS)

    Smirnova, D.E.; Kuksin, A.Yu.; Starikov, S.V.

    2015-01-01

    We present results of investigation of point defects formation and diffusion in pure γ-U and γ-U–Mo fuel alloys. The study was performed using molecular dynamics simulation with the different interatomic potentials. The point defects formation and migration energies were estimated for bcc γ-U and U–9 wt.%Mo alloy. The calculated diffusivities of atoms via defects are provided for pure γ-U and for the alloy components. Analysis of simulation results shows that self-interstitial atoms play a leading role in the self-diffusion processes in the materials studied. This fact can explain a remarkably high self-diffusion mobility observed experimentally for γ-U. The self-diffusion coefficients in γ-U calculated in this assumption agree with the data measured experimentally. It is shown that alloying of γ-U with Mo increase formation energy for self-interstitial atoms and decelerate their mobility. These changes lead to decrease of self-diffusion coefficients in U–Mo alloy compared to pure U

  17. Estimates of point defect production in α-quartz using molecular dynamics simulations

    Science.gov (United States)

    Cowen, Benjamin J.; El-Genk, Mohamed S.

    2017-07-01

    Molecular dynamics (MD) simulations are performed to investigate the production of point defects in α-quartz by oxygen and silicon primary knock-on atoms (PKAs) of 0.25-2 keV. The Wigner-Seitz (WS) defect analysis is used to identify the produced vacancies, interstitials, and antisites, and the coordination defect analysis is used to identify the under and over-coordinated oxygen and silicon atoms. The defects at the end of the ballistic phase and the residual defects, after annealing, increase with increased PKA energy, and are statistically the same for the oxygen and silicon PKAs. The WS defect analysis results show that the numbers of the oxygen vacancies and interstitials (VO, Oi) at the end of the ballistic phase is the highest, followed closely by those of the silicon vacancies and interstitials (VSi, Sii). The number of the residual oxygen and silicon vacancies and interstitials are statistically the same. In addition, the under-coordinated OI and SiIII, which are the primary defects during the ballistic phase, have high annealing efficiencies (>89%). The over-coordinated defects of OIII and SiV, which are not nearly as abundant in the ballistic phase, have much lower annealing efficiencies (PKA energy.

  18. A tungsten-rhenium interatomic potential for point defect studies

    Science.gov (United States)

    Setyawan, Wahyu; Gao, Ning; Kurtz, Richard J.

    2018-05-01

    A tungsten-rhenium (W-Re) classical interatomic potential is developed within the embedded atom method interaction framework. A force-matching method is employed to fit the potential to ab initio forces, energies, and stresses. Simulated annealing is combined with the conjugate gradient technique to search for an optimum potential from over 1000 initial trial sets. The potential is designed for studying point defects in W-Re systems. It gives good predictions of the formation energies of Re defects in W and the binding energies of W self-interstitial clusters with Re. The potential is further evaluated for describing the formation energy of structures in the σ and χ intermetallic phases. The predicted convex-hulls of formation energy are in excellent agreement with ab initio data. In pure Re, the potential can reproduce the formation energies of vacancies and self-interstitial defects sufficiently accurately and gives the correct ground state self-interstitial configuration. Furthermore, by including liquid structures in the fit, the potential yields a Re melting temperature (3130 K) that is close to the experimental value (3459 K).

  19. Observation of point defects in impurity-doped zinc selenide films using a monoenergetic positron beam

    International Nuclear Information System (INIS)

    Miyajima, T.; Okuyama, H.; Akimoto, K.; Mori, Y.; Wei, L.; Tanigawa, S.

    1992-01-01

    We studied point defects in ZnSe films grown by molecular beam epitaxy using the positron annihilation method. We found that doping with Ga atoms induces vacancy-type defects such as Zn vacancies, and that heavy doping with oxygen atoms induces interstitial type defects. We think that these defects are one of the causes of active carrier saturation in doped ZnSe films. (author)

  20. Radiation-induced segregation: A microchemical gauge to quantify fundamental defect parameters

    International Nuclear Information System (INIS)

    Simonen, E.P.; Bruemmer, S.M.

    1994-12-01

    Defect Kinetic are evaluated for austenitic stainless alloys by comparing model predictions to measured responses for radiation-induced grain boundary segregation. Heavy-ions, neutrons and proton irradiations having substantial statistical bases are examined. The combined modeling and measurement approach is shown to be useful for quantifying fundamental defect parameters. The mechanism evaluation indicates vacancy, migration energies of 1.15 eV or less and a vacancy formation energy at grain boundaries of 1.5 eV. Damage efficiencies of about 0.03 were established for heavy-ions and for light-water reactor neutrons. Inferred proton damage efficiencies were about 0.15. Segregation measured in an advanced gas-cooled reactor component was much greater than expected using the above parameters

  1. Influence of an uniaxial stress on point defects

    International Nuclear Information System (INIS)

    Beuneu, B.

    1984-03-01

    We study two effects of an elastic external uniaxial stress on point defects (created by electron irradiation): 1.- We measure the linear variation of their resistivity rhosub(D) under the elastic strain epsilon in Copper. It gives the specific elastoresistivity (E.R.S.) chisub(D)=delta rhosub(D)/epsilon. With the help of the results of VON STEBUT (fast neutrons) we show that the E.R.S. is characteristic of a defect and of its configuration. 2.- By means of resistivity measurements in molybdenum, we observe a paraelastic phenomenon. It is thermally activated (νsub(0) approximately= 10 12 s -1 and E approximately= 72 meV) and we attribute it to the reorientation of a dumbell interstitial under the uniaxial stress. The resistivity of this dumbbell is higher along its axis than perpendicularly to it. We have completed these results with some configuration energy calculations for the dumbbell and with a simple kinetic model [fr

  2. Optical spectroscopy and microscopy of radiation-induced light-emitting point defects in lithium fluoride crystals and films

    Science.gov (United States)

    Montereali, R. M.; Bonfigli, F.; Menchini, F.; Vincenti, M. A.

    2012-08-01

    Broad-band light-emitting radiation-induced F2 and F3+ electronic point defects, which are stable and laser-active at room temperature in lithium fluoride crystals and films, are used in dosimeters, tuneable color-center lasers, broad-band miniaturized light sources and novel radiation imaging detectors. A brief review of their photoemission properties is presented, and their behavior at liquid nitrogen temperatures is discussed. Some experimental data from optical spectroscopy and fluorescence microscopy of these radiation-induced point defects in LiF crystals and thin films are used to obtain information about the coloration curves, the efficiency of point defect formation, the effects of photo-bleaching processes, etc. Control of the local formation, stabilization, and transformation of radiation-induced light-emitting defect centers is crucial for the development of optically active micro-components and nanostructures. Some of the advantages of low temperature measurements for novel confocal laser scanning fluorescence microscopy techniques, widely used for spatial mapping of these point defects through the optical reading of their visible photoluminescence, are highlighted.

  3. FIBER OPTICS: Role of point defects in the photosensitivity of hydrogen-loaded phosphosilicate glass

    Science.gov (United States)

    Larionov, Yu V.

    2010-08-01

    It is shown that point defect modifications in hydrogen-loaded phosphosilicate glass (PSG) do not play a central role in determining its photosensitivity. Photochemical reactions that involve a two-step point defect modification and pre-exposure effect are incapable of accounting for photoinduced refractive index changes. It seems likely that a key role in UV-induced refractive index modifications is played by structural changes in the PSG network. Experimental data are presented that demonstrate intricate network rearrangement dynamics during UV exposure of PSG.

  4. Classification of Atrial Septal Defect and Ventricular Septal Defect with Documented Hemodynamic Parameters via Cardiac Catheterization by Genetic Algorithms and Multi-Layered Artificial Neural Network

    Directory of Open Access Journals (Sweden)

    Mustafa Yıldız

    2012-08-01

    Full Text Available Introduction: We aimed to develop a classification method to discriminate ventricular septal defect and atrial septal defect by using severalhemodynamic parameters.Patients and Methods: Forty three patients (30 atrial septal defect, 13 ventricular septal defect; 26 female, 17 male with documentedhemodynamic parameters via cardiac catheterization are included to study. Such parameters as blood pressure values of different areas,gender, age and Qp/Qs ratios are used for classification. Parameters, we used in classification are determined by divergence analysismethod. Those parameters are; i pulmonary artery diastolic pressure, ii Qp/Qs ratio, iii right atrium pressure, iv age, v pulmonary arterysystolic pressure, vi left ventricular sistolic pressure, vii aorta mean pressure, viii left ventricular diastolic pressure, ix aorta diastolicpressure, x aorta systolic pressure. Those parameters detected from our study population, are uploaded to multi-layered artificial neuralnetwork and the network was trained by genetic algorithm.Results: Trained cluster consists of 14 factors (7 atrial septal defect and 7 ventricular septal defect. Overall success ratio is 79.2%, andwith a proper instruction of artificial neural network this ratio increases up to 89%.Conclusion: Parameters, belonging to artificial neural network, which are needed to be detected by the investigator in classical methods,can easily be detected with the help of genetic algorithms. During the instruction of artificial neural network by genetic algorithms, boththe topology of network and factors of network can be determined. During the test stage, elements, not included in instruction cluster, areassumed as in test cluster, and as a result of this study, we observed that multi-layered artificial neural network can be instructed properly,and neural network is a successful method for aimed classification.

  5. First-principles study of point defects in thorium carbide

    International Nuclear Information System (INIS)

    Pérez Daroca, D.; Jaroszewicz, S.; Llois, A.M.; Mosca, H.O.

    2014-01-01

    Thorium-based materials are currently being investigated in relation with their potential utilization in Generation-IV reactors as nuclear fuels. One of the most important issues to be studied is their behavior under irradiation. A first approach to this goal is the study of point defects. By means of first-principles calculations within the framework of density functional theory, we study the stability and formation energies of vacancies, interstitials and Frenkel pairs in thorium carbide. We find that C isolated vacancies are the most likely defects, while C interstitials are energetically favored as compared to Th ones. These kind of results for ThC, to the best authors’ knowledge, have not been obtained previously, neither experimentally, nor theoretically. For this reason, we compare with results on other compounds with the same NaCl-type structure

  6. First-principles study of point defects in thorium carbide

    Energy Technology Data Exchange (ETDEWEB)

    Pérez Daroca, D., E-mail: pdaroca@tandar.cnea.gov.ar [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica, Av. General Paz 1499, (1650) San Martin, Buenos Aires (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas, (1033) Buenos Aires (Argentina); Jaroszewicz, S. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica, Av. General Paz 1499, (1650) San Martin, Buenos Aires (Argentina); Instituto de Tecnología Jorge A. Sabato, UNSAM-CNEA, Av. General Paz 1499, (1650) San Martin, Buenos Aires (Argentina); Llois, A.M. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica, Av. General Paz 1499, (1650) San Martin, Buenos Aires (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas, (1033) Buenos Aires (Argentina); Mosca, H.O. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica, Av. General Paz 1499, (1650) San Martin, Buenos Aires (Argentina); Instituto de Tecnología Jorge A. Sabato, UNSAM-CNEA, Av. General Paz 1499, (1650) San Martin, Buenos Aires (Argentina)

    2014-11-15

    Thorium-based materials are currently being investigated in relation with their potential utilization in Generation-IV reactors as nuclear fuels. One of the most important issues to be studied is their behavior under irradiation. A first approach to this goal is the study of point defects. By means of first-principles calculations within the framework of density functional theory, we study the stability and formation energies of vacancies, interstitials and Frenkel pairs in thorium carbide. We find that C isolated vacancies are the most likely defects, while C interstitials are energetically favored as compared to Th ones. These kind of results for ThC, to the best authors’ knowledge, have not been obtained previously, neither experimentally, nor theoretically. For this reason, we compare with results on other compounds with the same NaCl-type structure.

  7. Inflaton fluctuations in the presence of cosmological defects

    Science.gov (United States)

    Cho, Hing-Tong; Ng, Kin-Wang; Wang, I.-Chin

    2014-11-01

    We study quantum fluctuations of a free massless scalar field during inflation in the presence of a point, line, or plane defect such as a black hole, cosmic string, or domain wall, using a perturbative expansion in powers of small defect parameters. We provide results for the scalar two-point correlation functions that show explicitly a small violation of translational invariance during inflation.

  8. Defects and defect processes in nonmetallic solids

    CERN Document Server

    Hayes, W

    2004-01-01

    This extensive survey covers defects in nonmetals, emphasizing point defects and point-defect processes. It encompasses electronic, vibrational, and optical properties of defective solids, plus dislocations and grain boundaries. 1985 edition.

  9. First-principles study of point defects in CePO{sub 4} monazite

    Energy Technology Data Exchange (ETDEWEB)

    Yi, Yong; Zhao, Xiaofeng [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Teng, Yuancheng, E-mail: tyc239@163.com [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Bi, Beng [Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010 (China); Wang, Lili [Institute of Computer Application, China Academy of Engineering Physics, Mianyang 621900 (China); Wu, Lang; Zhang, Kuibao [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China)

    2016-12-15

    CePO{sub 4} monazite is an important radiation-resistant material that may act as a potential minor actinides waste form. Here, we present the results of the calculations for the basic radiation defect modellings in CePO{sub 4} crystals, along with the examination of their defect formation energies and effect of the defect concentrations. This study focused on building a fully-relaxed CePO{sub 4} model with the step iterative optimization from the DFT-GGA calculations using the VASP and CASTEP databases. The results show that the Frenkel defect configuration resulting from the center interstitials has a lower energy when compared to two adjacent orthophosphate centers (the saddle point position). High formation energies were found for all the types of intrinsic Frenkel and vacancy defects. The formation energies conform to the following trend (given in the decreasing order of energy): Ce Frenkel (12.41 eV) > O Frenkel (11.02 eV) > Ce vacancy (9.09 eV) > O vacancy (6.69 eV). We observed almost no effect from the defect concentrations on the defect formation energies.

  10. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

    Science.gov (United States)

    Gorai, Prashun; Seebauer, Edmund G.

    2014-07-01

    The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

  11. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

    International Nuclear Information System (INIS)

    Gorai, Prashun; Seebauer, Edmund G.

    2014-01-01

    The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO 2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

  12. Point defects in hexagonal germanium carbide monolayer: A first-principles calculation

    International Nuclear Information System (INIS)

    Ersan, Fatih; Gökçe, Aytaç Gürhan; Aktürk, Ethem

    2016-01-01

    Highlights: • Semiconductor GeC turns into metal by introducing a carbon vacancy. • Semiconductor GeC becomes half-metal by a single Ge vacancy. • Band gap value of GeC system can be tuned in the range of 0.308–1.738 eV by antisite or Stone–Wales defects. - Abstract: On the basis of first-principles plane-wave calculations, we investigated the electronic and magnetic properties of various point defects including single Ge and C vacancies, Ge + C divacancy, Ge↔C antisites and the Stone–Wales (SW) defects in a GeC monolayer. We found that various periodic vacancy defects in GeC single layer give rise to crucial effects on the electronic and magnetic properties. The band gaps of GeC monolayer vary significantly from 0.308 eV to 1.738 eV due to the presence of antisites and Stone–Wales defects. While nonmagnetic ground state of semiconducting GeC turns into metal by introducing a carbon vacancy, it becomes half-metal by a single Ge vacancy with high magnetization (4 μ_B) value per supercell. All the vacancy types have zero net magnetic moments, except single Ge vacancy.

  13. Point defects in hexagonal germanium carbide monolayer: A first-principles calculation

    Energy Technology Data Exchange (ETDEWEB)

    Ersan, Fatih [Department of Physics, Adnan Menderes University, 09100 Aydın (Turkey); Gökçe, Aytaç Gürhan [Department of Physics, Adnan Menderes University, 09100 Aydın (Turkey); Department of Physics, Dokuz Eylül University, 35160 İzmir (Turkey); Aktürk, Ethem, E-mail: ethem.akturk@adu.edu.tr [Department of Physics, Adnan Menderes University, 09100 Aydın (Turkey); Nanotechnology Application and Research Center, Adnan Menderes University, 09100 Aydın (Turkey)

    2016-12-15

    Highlights: • Semiconductor GeC turns into metal by introducing a carbon vacancy. • Semiconductor GeC becomes half-metal by a single Ge vacancy. • Band gap value of GeC system can be tuned in the range of 0.308–1.738 eV by antisite or Stone–Wales defects. - Abstract: On the basis of first-principles plane-wave calculations, we investigated the electronic and magnetic properties of various point defects including single Ge and C vacancies, Ge + C divacancy, Ge↔C antisites and the Stone–Wales (SW) defects in a GeC monolayer. We found that various periodic vacancy defects in GeC single layer give rise to crucial effects on the electronic and magnetic properties. The band gaps of GeC monolayer vary significantly from 0.308 eV to 1.738 eV due to the presence of antisites and Stone–Wales defects. While nonmagnetic ground state of semiconducting GeC turns into metal by introducing a carbon vacancy, it becomes half-metal by a single Ge vacancy with high magnetization (4 μ{sub B}) value per supercell. All the vacancy types have zero net magnetic moments, except single Ge vacancy.

  14. Effect of point defects on the electronic density states of SnC nanosheets: First-principles calculations

    Directory of Open Access Journals (Sweden)

    Soleyman Majidi

    Full Text Available In this work, we investigated the electronic and structural properties of various defects including single Sn and C vacancies, double vacancy of the Sn and C atoms, anti-sites, position exchange and the Stone–Wales (SW defects in SnC nanosheets by using density-functional theory (DFT. We found that various vacancy defects in the SnC monolayer can change the electronic and structural properties. Our results show that the SnC is an indirect band gap compound, with the band gap of 2.10 eV. The system turns into metal for both structure of the single Sn and C vacancies. However, for the double vacancy contained Sn and C atoms, the structure remains semiconductor with the direct band gap of 0.37 eV at the G point. We also found that for anti-site defects, the structure remains semiconductor and for the exchange defect, the structure becomes indirect semiconductor with the K-G point and the band gap of 0.74 eV. Finally, the structure of SW defect remains semiconductor with the direct band gap at K point with band gap of 0.54 eV. Keywords: SnC nanosheets, Density-functional theory, First-principles calculations, Electronic density of states, Band gap

  15. Modification of electronic structure, magnetic structure, and topological phase of bismuthene by point defects

    Science.gov (United States)

    Kadioglu, Yelda; Kilic, Sevket Berkay; Demirci, Salih; Aktürk, O. Üzengi; Aktürk, Ethem; Ciraci, Salim

    2017-12-01

    This paper reveals how the electronic structure, magnetic structure, and topological phase of two-dimensional (2D), single-layer structures of bismuth are modified by point defects. We first showed that a free-standing, single-layer, hexagonal structure of bismuth, named h-bismuthene, exhibits nontrivial band topology. We then investigated interactions between single foreign adatoms and bismuthene structures, which comprise stability, bonding, electronic structure, and magnetic structures. Localized states in diverse locations of the band gap and resonant states in band continua of bismuthene are induced upon the adsorption of different adatoms, which modify electronic and magnetic properties. Specific adatoms result in reconstruction around the adsorption site. Single vacancies and divacancies can form readily in bismuthene structures and remain stable at high temperatures. Through rebondings, Stone-Whales-type defects are constructed by divacancies, which transform into a large hole at high temperature. Like adsorbed adatoms, vacancies induce also localized gap states, which can be eliminated through rebondings in divacancies. We also showed that not only the optical and magnetic properties, but also the topological features of pristine h-bismuthene can be modified by point defects. The modification of the topological features depends on the energies of localized states and also on the strength of coupling between point defects.

  16. Intrinsic point defects in off-stoichiometric Cu2ZnSnSe4: A neutron diffraction study

    Science.gov (United States)

    Gurieva, Galina; Valle Rios, Laura Elisa; Franz, Alexandra; Whitfield, Pamela; Schorr, Susan

    2018-04-01

    This work is an experimental study of intrinsic point defects in off-stoichiometric kesterite type CZTSe by means of neutron powder diffraction. We revealed the existence of copper vacancies (VCu), various cation anti site defects (CuZn, ZnCu, ZnSn, SnZn, and CuZn), as well as interstitials (Cui, Zni) in a wide range of off-stoichiometric polycrystalline powder samples synthesized by the solid state reaction. The results show that the point defects present in off-stoichiometric CZTSe agree with the off-stoichiometry type model, assuming certain cation substitutions accounting for charge balance. In addition to the known off-stoichiometry types A-H, new types (I-L) have been introduced. For the very first time, a correlation between the chemical composition of the CZTSe kesterite type phase and the occurring intrinsic point defects is presented. In addition to the off-stoichiometry type specific defects, the Cu/Zn disorder is always present in the CZTSe phase. In Cu-poor/Zn-rich CZTSe, a composition considered as the one that delivers the best photovoltaic performance, mainly copper vacancies, ZnCu and ZnSn anti sites are present. Also, this compositional region shows the lowest degree of Cu/Zn disorder.

  17. Determination of defect content and defect profile in semiconductor heterostructures

    International Nuclear Information System (INIS)

    Zubiaga, A; Garcia, J A; Plazaola, F; Zuniga-Perez, J; Munoz-Sanjose, V

    2011-01-01

    In this article we present an overview of the technique to obtain the defects depth profile and width of a deposited layer and multilayer based on positron annihilation spectroscopy. In particular we apply the method to ZnO and ZnO/ZnCdO layers deposited on sapphire substrates. After introducing some terminology we first calculate the trend that the W/S parameters of the Doppler broadening measurements must follow, both in a qualitative and quantitative way. From this point we extend the results to calculate the width and defect profiles in deposited layer samples.

  18. Determination of defect content and defect profile in semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zubiaga, A [Laboratory of Physics, HUT, PO Box 1100, 02015 TKK, Espoo (Finland); Garcia, J A; Plazaola, F [Zientzia eta Teknologia Fakultatea, Euskal Herriko Unbertsitatea, P. K. 644, 48080, Bilbao (Spain); Zuniga-Perez, J; Munoz-Sanjose, V, E-mail: fernando.plazaola@ehu.es [Universitat de Valencia, Departamento de Fisica Aplicada i Electromagnetisme, Dr. Moliner 50, 46100 Burjassot, Valencia (Spain)

    2011-01-10

    In this article we present an overview of the technique to obtain the defects depth profile and width of a deposited layer and multilayer based on positron annihilation spectroscopy. In particular we apply the method to ZnO and ZnO/ZnCdO layers deposited on sapphire substrates. After introducing some terminology we first calculate the trend that the W/S parameters of the Doppler broadening measurements must follow, both in a qualitative and quantitative way. From this point we extend the results to calculate the width and defect profiles in deposited layer samples.

  19. On the application of the weak-beam technique to the determination of the sizes of small point-defect clusters in ion-irradiated copper

    International Nuclear Information System (INIS)

    Jenkins, M. L.

    1998-01-01

    We have made an analysis of the conditions necessary for the successful use of the weak-beam technique for identifying and characterizing small point-defect clusters in ion-irradiated copper. The visibility of small defects was found to depend only weakly on the magnitude of the beam-convergence. In general, the image sizes of small clusters were found to be most sensitive to the magnitude of Sa with the image sizes of some individual defects changing by large amounts with changes as small as 0.025 nm -1 . The most reliable information on the true defect size is likely to be obtained by taking a series of 5-9 micrographs with a systematic variation of deviation parameter from 0.2-0.3 nm -1 . This procedure allows size information to be obtained down to a resolution limit of about 0.5 nm for defects situated throughout a foil thickness of 60 nm. The technique has been applied to the determination of changes in the sizes of small defects produced by a low-temperature in-situ irradiation and annealing experiment

  20. A postprocessing method based on chirp Z transform for FDTD calculation of point defect states in two-dimensional phononic crystals

    International Nuclear Information System (INIS)

    Su Xiaoxing; Wang Yuesheng

    2010-01-01

    In this paper, a new postprocessing method for the finite difference time domain (FDTD) calculation of the point defect states in two-dimensional (2D) phononic crystals (PNCs) is developed based on the chirp Z transform (CZT), one of the frequency zooming techniques. The numerical results for the defect states in 2D solid/liquid PNCs with single or double point defects show that compared with the fast Fourier transform (FFT)-based postprocessing method, the method can improve the estimation accuracy of the eigenfrequencies of the point defect states significantly when the FDTD calculation is run with relatively few iterations; and furthermore it can yield the point defect bands without calculating all eigenfrequencies outside the band gaps. The efficiency and accuracy of the FDTD method can be improved significantly with this new postprocessing method.

  1. A postprocessing method based on chirp Z transform for FDTD calculation of point defect states in two-dimensional phononic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Su Xiaoxing, E-mail: xxsu@bjtu.edu.c [School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044 (China); Wang Yuesheng [Institute of Engineering Mechanics, Beijing Jiaotong University, Beijing 100044 (China)

    2010-09-01

    In this paper, a new postprocessing method for the finite difference time domain (FDTD) calculation of the point defect states in two-dimensional (2D) phononic crystals (PNCs) is developed based on the chirp Z transform (CZT), one of the frequency zooming techniques. The numerical results for the defect states in 2D solid/liquid PNCs with single or double point defects show that compared with the fast Fourier transform (FFT)-based postprocessing method, the method can improve the estimation accuracy of the eigenfrequencies of the point defect states significantly when the FDTD calculation is run with relatively few iterations; and furthermore it can yield the point defect bands without calculating all eigenfrequencies outside the band gaps. The efficiency and accuracy of the FDTD method can be improved significantly with this new postprocessing method.

  2. Correlation of point defects in CdZnTe with charge transport:application to room-temperature x-ray and gamma-ray. Final Technical Report

    International Nuclear Information System (INIS)

    Giles, Nancy C.

    2003-01-01

    (PL) and PL excitation spectroscopy are used to identify and characterize donors and acceptors and to determine zinc molar fraction; and (2) electron paramagnetic resonance (EPR) and photoinduced EPR experiments are performed at liquid-helium temperature to identify paramagnetic point defects and to determine the concentration of these defects. Results from the two experimental focus areas are correlated with detector performance parameters (e.g., electron and hole μτ products), crystal growth conditions, and microstructure analyses

  3. The intrinsic thermal expansion of point defects in Al

    International Nuclear Information System (INIS)

    Asty, Michel.

    1975-11-01

    The differential length measurement between two specimens, on pure and the other containing point defects, leads to the intrinsic thermal coefficient of expansion β(d) of the defect. A differential dilatometer by Laser interferometry is described operating between 77 and 300 K, with a sensitivity of about 100A on the length difference between an alloy sample and a pure dummy. Concerning substitutional impurities in aluminium between -190 deg C and -90 deg C, the intrinsic thermal coefficient of expansion of the defect β(d) is shown to have an absolute value much larger than the thermal expansion coefficient β 0 of the aluminium matrix: β(d)/β 0 =+3 to +6 for the magnesium impurity, β(d)/β 0 =-3 to -4 for the calcium impurity, and to be independent of the temperature. The existing theoretical models give evaluations for away from modeles theoriques existant sont tres loin d'expliquer les resultats experimentaux. high temperature, the results show that vacancies and divacancies, before collapsing in dislocation loops, form multivacancy clusters with large formation volumes: such a property makes these clusters comparable to cavities where the formation volume per vacancy is equal to the atomic volume of the matrix [fr

  4. Steady distribution structure of point defects near crystal-melt interface under pulling stop of CZ Si crystal

    Science.gov (United States)

    Abe, T.; Takahashi, T.; Shirai, K.

    2017-02-01

    In order to reveal a steady distribution structure of point defects of no growing Si on the solid-liquid interface, the crystals were grown at a high pulling rate, which Vs becomes predominant, and the pulling was suddenly stopped. After restoring the variations of the crystal by the pulling-stop, the crystals were then left in prolonged contact with the melt. Finally, the crystals were detached and rapidly cooled to freeze point defects and then a distribution of the point defects of the as-grown crystals was observed. As a result, a dislocation loop (DL) region, which is formed by the aggregation of interstitials (Is), was formed over the solid-liquid interface and was surrounded with a Vs-and-Is-free recombination region (Rc-region), although the entire crystals had been Vs rich in the beginning. It was also revealed that the crystal on the solid-liquid interface after the prolonged contact with the melt can partially have a Rc-region to be directly in contact with the melt, unlike a defect distribution of a solid-liquid interface that has been growing. This experimental result contradicts a hypothesis of Voronkov's diffusion model, which always assumes the equilibrium concentrations of Vs and Is as the boundary condition for distribution of point defects on the growth interface. The results were disscussed from a qualitative point of view of temperature distribution and thermal stress by the pulling-stop.

  5. Energetics of intrinsic point defects in uranium dioxide from electronic-structure calculations

    International Nuclear Information System (INIS)

    Nerikar, Pankaj; Watanabe, Taku; Tulenko, James S.; Phillpot, Simon R.; Sinnott, Susan B.

    2009-01-01

    The stability range of intrinsic point defects in uranium dioxide is determined as a function of temperature, oxygen partial pressure, and non-stoichiometry. The computational approach integrates high accuracy ab initio electronic-structure calculations and thermodynamic analysis supported by experimental data. In particular, the density functional theory calculations are performed at the level of the spin polarized, generalized gradient approximation and includes the Hubbard U term; as a result they predict the correct anti-ferromagnetic insulating ground state of uranium oxide. The thermodynamic calculations enable the effects of system temperature and partial pressure of oxygen on defect formation energy to be determined. The predicted equilibrium properties and defect formation energies for neutral defect complexes match trends in the experimental literature quite well. In contrast, the predicted values for charged complexes are lower than the measured values. The calculations predict that the formation of oxygen interstitials becomes increasingly difficult as higher temperatures and reducing conditions are approached

  6. Introduction and recovery of point defects in electron-irradiated ZnO

    International Nuclear Information System (INIS)

    Tuomisto, F.; Saarinen, K.; Look, D.C.; Farlow, G.C.

    2005-01-01

    We have used positron annihilation spectroscopy to study the introduction and recovery of point defects in electron-irradiated n-type ZnO. The irradiation (E el =2 MeV, fluence 6x10 17 cm -2 ) was performed at room temperature, and isochronal annealings were performed from 300 to 600 K. In addition, monochromatic illumination of the samples during low-temperature positron measurements was used in identification of the defects. We distinguish two kinds of vacancy defects: the Zn and O vacancies, which are either isolated or belong to defect complexes. In addition, we observe negative-ion-type defects, which are attributed to O interstitials or O antisites. The Zn vacancies and negative ions act as compensating centers and are introduced at a concentration [V Zn ]≅c ion ≅2x10 16 cm -3 . The O vacancies are introduced at a 10-times-larger concentration [V O ]≅3x10 17 cm -3 and are suggested to be isolated. The O vacancies are observed as neutral at low temperatures, and an ionization energy of 100 meV could be fitted with the help of temperature-dependent Hall data, thus indicating their deep donor character. The irradiation-induced defects fully recover after the annealing at 600 K, in good agreement with electrical measurements. The Zn vacancies recover in two separate stages, indicating that the Zn vacancies are parts of two different defect complexes. The O vacancies anneal simultaneously with the Zn vacancies at the later stage, with an activation energy of E V,O m =1.8±0.1 eV. The negative ions anneal out between the two annealing stages of the vacancies

  7. Atomic diffusion and point defects in crystals. Final report. Progress report, April 1, 1956--August 31, 1972

    International Nuclear Information System (INIS)

    Slifkin, L.M.

    1972-01-01

    Studies were made to elucidate the fundamental mechanisms of point defect transport in simple metals and in crystals of the silver halides. Experiments performed include: (a) effect of composition on diffusion in Ag-Au alloys and Ag-Cd alloys; (b) effect of a vacancy flux on diffusion; (c) diffusion of solutes in aluminum and its dilute alloys; (d) dislocation effects in Cu 3 Au; (e) role of electronic structure and ionic radius in diffusion of cations in AgCl; (f) effects of ionic radius on halide impurity ion diffusion in AgCl and AgBr; (g) production of excess point defects in AgCl by deformation and by quenching; (h) the kinetics of the pinning of dislocations by point defects in AgBr crystals. (auth)

  8. Effects of point defect trapping and solute segregation on irradiation-induced swelling and creep

    International Nuclear Information System (INIS)

    Mansur, L.K.

    1978-01-01

    The theory of irradiation swelling and creep, generalized to include impurity trapping of point defects and impurity-induced changes in sink efficiencies for point defects, is reviewed. The mathematical framework is developed and significant results are described. These include the relation between vacancy and interstitial trapping and the effectiveness of trapping as compared to segregation-induced changes in sink efficiencies in modifying void nucleation, void growth, and creep. Current understanding is critically assessed. Several areas requiring further development are identified. In particular those given special attention are the treatment of nondilute solutions and the consequences of current uncertainties in fundamental materials properties whose importance has been identified using the theory

  9. Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Jared M.; Im, Soohyun; Windl, Wolfgang; Hwang, Jinwoo, E-mail: hwang.458@osu.edu

    2017-01-15

    We propose a new scanning transmission electron microscopy (STEM) technique that can realize the three-dimensional (3D) characterization of vacancies, lighter and heavier dopants with high precision. Using multislice STEM imaging and diffraction simulations of β-Ga{sub 2}O{sub 3} and SrTiO{sub 3}, we show that selecting a small range of low scattering angles can make the contrast of the defect-containing atomic columns substantially more depth-dependent. The origin of the depth-dependence is the de-channeling of electrons due to the existence of a point defect in the atomic column, which creates extra “ripples” at low scattering angles. The highest contrast of the point defect can be achieved when the de-channeling signal is captured using the 20–40 mrad detection angle range. The effect of sample thickness, crystal orientation, local strain, probe convergence angle, and experimental uncertainty to the depth-dependent contrast of the point defect will also be discussed. The proposed technique therefore opens new possibilities for highly precise 3D structural characterization of individual point defects in functional materials. - Highlights: • A new electron microscopy technique that can visualize 3D position of point defect is proposed. • The technique relies on the electron de-channeling signals at low scattering angles. • The technique enables precise determination of the depth of vacancies and lighter impurity atoms.

  10. Mathematical simulation of point defect interaction with grain boundaries

    International Nuclear Information System (INIS)

    Bojko, V.S.

    1987-01-01

    Published works, where the interaction of point defects and grain boundaries was studied by mathematical simulation methods, have been analysed. Energetics of the vacancy formation both in nuclei of large-angle special grain boundaries and in lattice regions adjoining them has been considered. The data obtained permit to explain specific features of grain-boundary diffusion processes. Results of mathematical simulation of the interaction of impurity atoms and boundaries have been considered. Specific features of the helium atom interaction with large-angle grain boundaries are analysed as well

  11. Point defects and irradiation in oxides: simulations at the atomic scale

    International Nuclear Information System (INIS)

    Crocombette, J.P.

    2005-11-01

    The author gives an overview of his research activity since 1995. This activity concerns research in materials science, and more particularly the ageing of oxides present in the nuclear industry, or more generally, the evolution of these materials under irradiation. The first part deals with the investigation of point defects, and more particularly of the structures and energies of these defects. The author discusses results obtained on uranium dioxide, on amorphous silica, and on the solution of oxygen in silver. The second part deals with irradiation-induced damages in crystalline matrices storing radioactive actinides, and more particularly with the effect of alpha disintegration decay nuclei which are the main sources of long term irradiation in these materials

  12. Complex Interaction Mechanisms between Dislocations and Point Defects Studied in Pure Aluminium by a Two-Wave Acoustic Coupling Technique

    Science.gov (United States)

    Bremnes, O.; Progin, O.; Gremaud, G.; Benoit, W.

    1997-04-01

    Ultrasonic experiments using a two-wave coupling technique were performed on 99.999% pure Al in order to study the interaction mechanisms occurring between dislocations and point defects. The coupling technique consists in measuring the attenuation of ultrasonic waves during low-frequency stress cycles (t). One obtains closed curves () called signatures whose shape and evolution are characteristic of the interaction mechanism controlling the low-frequency dislocation motion. The signatures observed were attributed to the interaction of the dislocations with extrinsic point defects. A new interpretation of the evolution of the signatures measured below 200 K with respect to temperature and stress frequency had to be established: they are linked to depinning of immobile point defects, whereas a thermally activated depinning mechanism does not fit the observations. The signatures measured between 200 and 370 K were interpreted as dragging and depinning of extrinsic point defects which are increasingly mobile with temperature.

  13. Study of Te Inclusion and Related Point Defects in THM-Growth CdMnTe Crystal

    Science.gov (United States)

    Mao, Yifei; Zhang, Jijun; Min, Jiahua; Liang, Xiaoyan; Huang, Jian; Tang, Ke; Ling, Liwen; Li, Ming; Zhang, Ying; Wang, Linjun

    2018-02-01

    This study establishes a model for describing the interaction between Te inclusions, dislocations and point defects in CdMnTe crystals. The role of the complex environment surrounding the formation of Te inclusions was analyzed. Images of Te inclusions captured by scanning electron microscope and infrared microscope were used to observe the morphology of Te inclusions. The morphology of Te inclusions is discussed in light of crystallography, from the crystal growth temperature at 900°C to the melting temperature of Te inclusions using the traveling heater method. The dislocation nets around Te inclusions were calculated by counting lattice mismatches between the Te inclusions and the bulk CdMnTe at 470°C. The point defects of Te antisites were found to be gathered around Te inclusions, with dislocation climb during the cooling phase of crystal growth from 470°C to room temperature. The Te inclusions, dislocation nets and surrounding point defects are considered to be an entirety for evaluating the effect of Te inclusions on CdMnTe detector performance, and an effective mobility-lifetime product (μτ) was obtained.

  14. Combined effect of oxygen deficient point defects and Ni doping in radio frequency magnetron sputtering deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Saha, B., E-mail: biswajit.physics@gmail.com [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India); Department of Physics, National Institute of Technology Agartala, Jirania 799046, Tripura (India); Das, N.S.; Chattopadhyay, K.K. [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India)

    2014-07-01

    Ni doped ZnO thin films with oxygen deficiency have been synthesized on glass substrates by radio frequency magnetron sputtering technique using argon plasma. The combined effect of point defects generated due to oxygen vacancies and Ni doping on the optical and electrical properties of ZnO thin films has been studied in this work. Ni doping concentrations were varied and the structural, optical and electrical properties of the films were studied as a function of doping concentrations. The films were characterized with X-ray diffractometer, UV–Vis–NIR spectrophotometer, X-ray photoelectron spectroscopy, atomic force microscopy and electrical conductivity measurements. Oxygen deficient point defects (Schottky defects) made the ZnO thin film highly conducting while incorporation of Ni dopant made it more functional regarding their electrical and optical properties. The films were found to have tunable electrical conductivity with Ni doping concentrations. - Highlights: • ZnO thin films prepared by radio frequency magnetron sputtering technique • Synthesis process was stimulated to introduce Schottky-type point defects. • Point defects and external doping of Ni made ZnO thin films more functional. • Point defect induced high electrical conductivity in ZnO thin film. • Significant shift in optical bandgap observed in ZnO with Ni doping concentrations.

  15. The effect of point defects on ferroelastic phase transition of lanthanum-doped calcium titanate ceramics

    International Nuclear Information System (INIS)

    Ni, Yan; Zhang, Zhen; Wang, Dong; Wang, Yu; Ren, Xiaobing

    2013-01-01

    Highlights: ► The effect of point defects on phase transitions in Ca (1−x) La 2x/3 TiO 3 was studied. ► When x = 0.45, normal ferroelastic phase transition happens. ► When x = 0.7, a “glassy-like” frozen process appears. ► Point defects weaken the thermodynamic stability of ferroelastic phase. ► Point defects induce a “glassy-like” frozen process. -- Abstract: In the present paper, La-doped CaTiO 3 is studied to investigate the effect of point defects on ferroelastic phase transition of the ceramics. The dynamic mechanical measurements show that the transition temperature of the orthorhombic to tetragonal phase transition of Ca (1−x) La 2x/3 TiO 3 decreases with increasing dopant (La) concentration x. The samples with the dopant content of x = 0.45 and 0.7 exhibit different structure evolution features during their transition processes as revealed by in situ powder X-ray diffraction (XRD) measurement. Moreover, when x = 0.7, the storage modulus shows a frequency-dependent minimum at T g , which can be well fitted with the Vogel–Fulcher relation, and the corresponding internal friction also exhibits a frequency-dependent peak within the same temperature regime. These results thus indicate that doping La suppresses ferroelastic phase transition in CaTiO 3 and induces a “glassy-like” behavior in Ca (1−x) La 2x/3 TiO 3 , which is similar to “strain glass” in Ni-doped Ti 50−x Ni 50+x

  16. Estimation of the temperature dependent interaction between uncharged point defects in Si

    Energy Technology Data Exchange (ETDEWEB)

    Kamiyama, Eiji [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja-shi, Okayama-ken 719-1197 (Japan); GlobalWafers Japan Co., Ltd., 30 Soya, Hadano, Kanagawa, 257-8566 (Japan); Vanhellemont, Jan [Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, Ghent B-9000 (Belgium); Sueoka, Koji [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja-shi, Okayama-ken 719-1197 (Japan)

    2015-01-15

    A method is described to estimate the temperature dependent interaction between two uncharged point defects in Si based on DFT calculations. As an illustration, the formation of the uncharged di-vacancy V{sub 2} is discussed, based on the temperature dependent attractive field between both vacancies. For that purpose, all irreducible configurations of two uncharged vacancies are determined, each with their weight given by the number of equivalent configurations. Using a standard 216-atoms supercell, nineteen irreducible configurations of two vacancies are obtained. The binding energies of all these configurations are calculated. Each vacancy is surrounded by several attractive sites for another vacancy. The obtained temperature dependent of total volume of these attractive sites has a radius that is closely related with the capture radius for the formation of a di-vacancy that is used in continuum theory. The presented methodology can in principle also be applied to estimate the capture radius for pair formation of any type of point defects.

  17. Combining DFT, Cluster Expansions, and KMC to Model Point Defects in Alloys

    Science.gov (United States)

    Modine, N. A.; Wright, A. F.; Lee, S. R.; Foiles, S. M.; Battaile, C. C.; Thomas, J. C.; van der Ven, A.

    In an alloy, defect energies are sensitive to the occupations of nearby atomic sites, which leads to a distribution of defect properties. When radiation-induced defects diffuse from their initially non-equilibrium locations, this distribution becomes time-dependent. The defects can become trapped in energetically favorable regions of the alloy leading to a diffusion rate that slows dramatically with time. Density Functional Theory (DFT) allows the accurate determination of ground state and transition state energies for a defect in a particular alloy environment but requires thousands of processing hours for each such calculation. Kinetic Monte-Carlo (KMC) can be used to model defect diffusion and the changing distribution of defect properties but requires energy evaluations for millions of local environments. We have used the Cluster Expansion (CE) formalism to ``glue'' together these seemingly incompatible methods. The occupation of each alloy site is represented by an Ising-like variable, and products of these variables are used to expand quantities of interest. Once a CE is fit to a training set of DFT energies, it allows very rapid evaluation of the energy for an arbitrary configuration, while maintaining the accuracy of the underlying DFT calculations. These energy evaluations are then used to drive our KMC simulations. We will demonstrate the application of our DFT/MC/KMC approach to model thermal and carrier-induced diffusion of intrinsic point defects in III-V alloys. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE.

  18. Stability and kinetics of point defects in SiO2 and in SiC

    International Nuclear Information System (INIS)

    Roma, G.

    2012-01-01

    This document is conceived as an overview of Guido Roma's research achievements on defects stability and kinetics in two materials of interest in nuclear science and for many other application domains: silicon dioxide and silicon carbide. An extended summary in french is followed by the main document, in english. Chapter 1 describes the context, introduces the approach and explains the choice of silicon dioxide and silicon carbide. Chapter 2 discusses several approximations and specific issues of the application of Density Functional Theory to point defects in non-metallic materials for the study of defects energetics and diffusion. Chapter 3 is devoted to native defects in silicon dioxide and the understanding of self-diffusion in crystalline and amorphous SiO 2 . Chapter 4 summarises the results on native defects and palladium impurities in silicon carbide. A conclusion, including suggestions for future developments, closes the main part of the document. (author) [fr

  19. Study of a radiation point defects ensemble in thin GaAs layers implanted by Be+ and Se+ ions

    International Nuclear Information System (INIS)

    Shcherbachev, K.D.; Bublik, V.T.; Kuripyatnik, A.V.; Yurchuk, S.Yu.

    2001-01-01

    The behaviour of a radiation point defects ensemble in SI-GaAs(100) wafers implanted by Be + (a dose of 1x10 14 at/cm 2 , an energy of 50 and 150 keV) and Se + (a dose of 5x10 14 at/cm 2 , an energy of 150, 180 and 240 keV) ions are studied by a triple-crystal diffractometry method. The strain profile and a number of residual radiation point defects are shown to be determined by defects annihilation, their sink to the surface and rechanneling during the implantation [ru

  20. Nonlinear electron-density distribution around point defects in simple metals. I. Formulation

    International Nuclear Information System (INIS)

    Gupta, A.K.; Jena, P.; Singwi, K.S.

    1978-01-01

    Modification, which is exact in the limit of long wavelength, of the nonlinear theory of Sjoelander and Stott of electron distribution around point defects is given. This modification consists in writing a nonlinear integral equations for the Fourier transform γ 12 (q) of the induced charge density surrounding the point defect, which includes a term involving the density derivative of γ 12 (q). A generalization of the Pauli-Feynman coupling-constant-integration method, together with the Kohn-Sham formalism, is used to exactly determine the coefficient of this derivative term in the long-wavelength limit. The theory is then used to calculate electron-density profiles around a vacancy, an eight-atom void, and a point ion. The results are compared with those of (i) a linear theory, (ii) Sjoelander-Stott theory, and (iii) a fully self-consistent calculation based on the density-functional formalism of Kohn and Sham. It is found that in the case of a vacancy, the results of the present theory are in very good agreement with those based on Kohn-Sham formalism, whereas in the case of a singular attractive potential of a proton, the results are quite poor in the vicinity of the proton, but much better for larger distances. A critical discussion of the theory vis a vis the Kohn-Sham formalism is also given. Some applications of the theory are pointed out

  1. Recent studies of point defects by Huang scattering of x rays

    International Nuclear Information System (INIS)

    Maeta, Hiroshi

    1977-01-01

    Huang scattering allows the measurements of the symmetry and strength of point defects produced by irradiations and constitutes a very sensitive method for observing the clustering that occurs during irradiations or annealings. In the present review, the principles and characteristics of the Huang scattering and recent investigations using this technique are described. [J.Cryst.Soc.Japan 19,231(1977)] (auth.)

  2. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    KAUST Repository

    Chroneos, Alexander I.

    2012-01-26

    In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Irradiation creep by climb-enables glide of dislocations resulting from preferred absorption of point defects

    Energy Technology Data Exchange (ETDEWEB)

    Mansur, L K [Oak Ridge National Lab., TN (USA)

    1979-04-01

    A mechanism of irradiation creep arising from the climb-enabled glide of dislocations due to stress-induced preferred absorption of radiation-produced point defects is proposed. This creep component is here termed preferred absorption glide, PAG. PAG-creep operates in addition to the previously studied components of creep from climb by stress-induced preferred absorption, (SI) PA-creep, and the climb-enabled glide due to excess absorption of interstitials on dislocations during swelling, I-creep. A formulation of the various climb and climb-enabled glide processes which includes earlier results is presented. PAG-creep is comparable in magnitude to PA-creep in the parameter range of applications. While the PSA-creep rate and the I-creep rate are linear in stress, the PAG-creep rate is quadratic in stress and thus dominates at high stresses.

  4. Statistical MOSFET Parameter Extraction with Parameter Selection for Minimal Point Measurement

    Directory of Open Access Journals (Sweden)

    Marga Alisjahbana

    2013-11-01

    Full Text Available A method to statistically extract MOSFET model parameters from a minimal number of transistor I(V characteristic curve measurements, taken during fabrication process monitoring. It includes a sensitivity analysis of the model, test/measurement point selection, and a parameter extraction experiment on the process data. The actual extraction is based on a linear error model, the sensitivity of the MOSFET model with respect to the parameters, and Newton-Raphson iterations. Simulated results showed good accuracy of parameter extraction and I(V curve fit for parameter deviations of up 20% from nominal values, including for a process shift of 10% from nominal.

  5. Coupling reducing k-points for supercell models of defects in three-dimensional photonic crystals

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper; Bjarklev, Anders Overgaard

    2004-01-01

    The optimum choice of k-point for supercell calculations of defect states in a three-dimensional photonic crystal is investigated for the case of a supercell with a simple cubic (SC) structure. By using the k-point (1/4,1/4,1/4) it is possible to eliminate the symmetric part of the repeated...

  6. Healing parameters in a rabbit partial tendon defect following tenocyte/biomaterial implantation.

    Science.gov (United States)

    Stoll, Christiane; John, Thilo; Conrad, Claudia; Lohan, Anke; Hondke, Sylvia; Ertel, Wolfgang; Kaps, Christian; Endres, Michaela; Sittinger, Michael; Ringe, Jochen; Schulze-Tanzil, G

    2011-07-01

    Although rabbits are commonly used as tendon repair model, interpretative tools are divergent and comprehensive scoring systems are lacking. Hence, the aim was to develop a multifaceted scoring system to characterize healing in a partial Achilles tendon defect model. A 3 mm diameter defect was created in the midsubstance of the medial M. gastrocnemius tendon, which remained untreated or was filled with a polyglycolic-acid (PGA) scaffold + fibrin and either left cell-free or seeded with Achilles tenocytes. After 6 and 12 weeks, tendon repair was assessed macroscopically and histologically using self-constructed scores. Macroscopical scoring revealed superior results in the tenocyte seeded PGA + fibrin group compared with the controls at both time points. Histology of all operated tendons after 6 weeks proved extracellular matrix (ECM) disorganization, hypercellularity and occurrence of irregular running elastic fibres with no significance between the groups. Some inflammation was associated with PGA implantation and increased sulphated proteoglycan deposition predominantly with the empty defects. After 12 weeks defect areas became hard to recognize and differences between groups, except for the increased sulphated proteoglycans content in the empty defects, were almost nullified. We describe a partial Achilles tendon defect model and versatile scoring tools applicable for characterizing biomaterial-supported tendon healing. Copyright © 2011 Elsevier Ltd. All rights reserved.

  7. Computer experiments on the imaging of point defects with the conventional transmission electron microscope

    Energy Technology Data Exchange (ETDEWEB)

    Krakow, W [Xerox Corp., Rochester, N.Y. (USA)

    1978-02-01

    To aid in the interpretation of high resolution electron micrographs of defect structures in crystals, computer-simulated dark-field electron micrographs have been obtained for a variety of point defects in metals. Interpretation of these images in terms of atomic positions and atom correlations becomes straightforward, and it is a simple matter to distinguish between real structural information and image artifacts produced by the phase contrast mechanism in the electron optical imaging process.

  8. Point defects in nickel

    International Nuclear Information System (INIS)

    Peretto, P.

    1969-01-01

    The defects in electron irradiated nickel (20 deg. K) or neutron irradiated nickel (28 deg. K) are studied by simultaneous analysis using the magnetic after-effect, electron microscopy and electrical resistivity recovery. We use zone refined nickel (99.999 per cent) which, for some experiments, is alloyed with a small amount of iron (for example 0.1 per cent Fe). The temperature dependant electrical recovery may be divided in four stages. The sub-stages I B (31 deg. K), I C (42 deg. K), I D (from to 57 deg. K) and I E (62 deg. K) of stage I are due to the disappearance of single interstitials into vacancies. The interstitial defect has a split configuration with a migration energy of about 0.15 eV. In the close pair which disappears in stage I B the interstitial is found to be in a 3. neighbour position whilst in stage I D it is near the direction from the vacancy. In stage I E there is no longer any interaction between the interstitial and the vacancy. The stage II is due to more complicated interstitial defects: di-interstitials for stage II B (84 deg. K) and larger and larger interstitial loops for the following sub-stages. The loops may be seen by electron microscopy. Impurities can play the role of nucleation centers for the loops. Stages III A (370 deg. K) and III B (376 deg. K) are due to two types of di-vacancies. During stage IV (410 deg. K) the single vacancies migrate. Vacancy type loops and interstitial type loops grow concurrently and disappear at about 800 deg. K as observed by electron microscopy. (author) [fr

  9. Influence of point defects' concentration on the ZnO matrix – a ...

    African Journals Online (AJOL)

    Numerical simulations of the effect of the presence of point defects in the matrix of ZnO were carried out using MATLAB computation procedure. The variation of impurity atom concentration with the energy gap was simulated. The plot obtained exhibited an exponential increase in energy gap with respect to the concentration ...

  10. Resolving Point Defects in the Hydration Structure of Calcite (10.4) with Three-Dimensional Atomic Force Microscopy

    Science.gov (United States)

    Söngen, Hagen; Reischl, Bernhard; Miyata, Kazuki; Bechstein, Ralf; Raiteri, Paolo; Rohl, Andrew L.; Gale, Julian D.; Fukuma, Takeshi; Kühnle, Angelika

    2018-03-01

    It seems natural to assume that defects at mineral surfaces critically influence interfacial processes such as the dissolution and growth of minerals in water. The experimental verification of this claim, however, is challenging and requires real-space methods with utmost spatial resolution, such as atomic force microscopy (AFM). While defects at mineral-water interfaces have been resolved in 2D AFM images before, the perturbation of the surrounding hydration structure has not yet been analyzed experimentally. In this Letter, we demonstrate that point defects on the most stable and naturally abundant calcite (10.4) surface can be resolved using high-resolution 3D AFM—even within the fifth hydration layer. Our analysis of the hydration structure surrounding the point defect shows a perturbation of the hydration with a lateral extent of approximately one unit cell. These experimental results are corroborated by molecular dynamics simulations.

  11. Electron radiation damage of metals and nature of point defects by high voltage electron microscopy

    International Nuclear Information System (INIS)

    Kiritani, M.

    1975-01-01

    The formation of point defect clusters by electron irradiation in a variety of metals (Al, Au, Cu, Fe, Ni, Mo, Pt, W) in a wide range of temperatures 10 to 1000 0 K are observed. A unified explanation is given for their nucleation and growth from the viewpoint of the migration and interaction of point defects. The effect of free surfaces and other permanent sinks are examined. Analysis of the systematic variation of the nucleation of interstitial clustered defects lead to confirm the free migration of interstitials with fairly small activation energies. Their apparent values obtained from the impurity sensitive nucleation at medium temperatures are 0.08 (Al), 0.19 (Au), 0.26 (Fe), 0.18 (Mo) and 0.21 eV (W), and their values obtained from low temperature irradiation are 0.03 (Al), 0.04 (Au) and 0.05 eV (Mo). The trapping of interstitials by foreign atoms and heterogeneous effects on nucleation of interstitial clusters are discussed

  12. Contribution to the study of point defects formed in nickel by electron bombardment

    International Nuclear Information System (INIS)

    Oddou, J.L.

    1968-12-01

    After a short account of the experimental techniques employed in our studies, the experimental results obtained on pure nickel samples are exposed. The apparition of the successive annihilation stages of point defects created by electron bombardment is established by isochronal heat treatments: the annihilation kinetics and the corresponding activation energies are determined. The effect of the incident particle doses is also studied. The experimental results are then compared with R.A. Johnson's theoretical calculations of the stability and the migration of point defects in nickel, and taking into account the results obtained by Peretto in magnetic after effect measurements. This leads us to a model in good agreement with calculations and experiment for the first stages. In a second chapter the behaviour of nickel doped by certain impurities is studied. First, the results concerning the rate of increase of resistivity (function of sample purity) is investigated. Two possible explanations of the observed phenomenon are proposed: either a deviation with respect to Mathiessen's law, or an increase of the number of defects formed in the presence of impurity atoms. Finally, a study of the resistivity recovery of the doped samples permits us to suggest an order of magnitude for the binding energy interstitial/impurity atom in the nickel matrix. (author) [fr

  13. Point defect states in Sb-doped germanium

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Neil S., E-mail: neilp@mit.edu; Monmeyran, Corentin, E-mail: comonmey@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States); Agarwal, Anuradha [Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States); Kimerling, Lionel C. [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States); Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)

    2015-10-21

    Defect states in n-type Sb-doped germanium were investigated by deep-level transient spectroscopy. Cobalt-60 gamma rays were used to generate isolated vacancies and interstitials which diffuse and react with impurities in the material to form four defect states (E{sub 37}, E{sub 30}, E{sub 22}, and E{sub 21}) in the upper half of the bandgap. Irradiations at 77 K and 300 K as well as isothermal anneals were performed to characterize the relationships between the four observable defects. E{sub 37} is assigned to the Sb donor-vacancy associate (E-center) and is the only vacancy containing defect giving an estimate of 2 × 10{sup 11 }cm{sup −3} Mrad{sup −1} for the uncorrelated vacancy-interstitial pair introduction rate. The remaining three defect states are interstitial associates and transform among one another. Conversion ratios between E{sub 22}, E{sub 21}, and E{sub 30} indicate that E{sub 22} likely contains two interstitials.

  14. Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

    Science.gov (United States)

    Sabanskis, A.; Virbulis, J.

    2018-05-01

    Mathematical modelling is employed to numerically analyse the dynamics of the Czochralski (CZ) silicon single crystal growth. The model is axisymmetric, its thermal part describes heat transfer by conduction and thermal radiation, and allows to predict the time-dependent shape of the crystal-melt interface. Besides the thermal field, the point defect dynamics is modelled using the finite element method. The considered process consists of cone growth and cylindrical phases, including a short period of a reduced crystal pull rate, and a power jump to avoid large diameter changes. The influence of the thermal stresses on the point defects is also investigated.

  15. In and Cd as defect traps in titanium dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Schell, Juliana, E-mail: juliana.schell@cern.ch [European Organization for Nuclear Research (CERN) (Switzerland); Lupascu, Doru C. [University of Duisburg-Essen, Institute for Materials Science and Center for Nanointegration, Duisburg-Essen (CENIDE) (Germany); Martins Correia, João Guilherme [European Organization for Nuclear Research (CERN) (Switzerland); Carbonari, Artur Wilson [Universidade de São Paulo, Instituto de Pesquisas Energéticas e Nucleares (Brazil); Deicher, Manfred [Universität des Saarlandes, Experimentalphysik (Germany); Barbosa, Marcelo Baptista [Instituto de Física dos Materiais da Universidade do Porto (Portugal); Mansano, Ronaldo Domingues [Universidade de São Paulo, Escola Politécnica (Brazil); Johnston, Karl [European Organization for Nuclear Research (CERN) (Switzerland); Ribeiro, Ibere S. [Universidade de São Paulo, Instituto de Pesquisas Energéticas e Nucleares (Brazil); Collaboration: ISOLDE Collaboration, ISOLDE (European Organization for Nuclear Research (CERN) (Switzerland)

    2017-11-15

    We present a study of TiO{sub 2} single crystals from the point of view of the dopant atom that simultaneously behaves as the probing element. We used gamma-gamma time dependent perturbed angular correlations working with selected tracer elements ({sup 111}In/ {sup 111}Cd, {sup 111m}Cd/ {sup 111}Cd) together to investigate the different behavior of Cd and In dopants, particularly their interaction with point defects in the TiO{sub 2} lattice. Results show that the hyperfine interactions observed at {sup 111}Cd from {sup 111}In or {sup 111m}Cd decay are quite different. {sup 111}In/ {sup 111}Cd results show a single site fraction characterized by a quadrupole frequency with asymmetry parameter similar to those observed for the same probe nuclei in bulk TiO{sub 2} oxides. Results for {sup 111m}Cd/ {sup 111}Cd reveal two site fractions, one characterized by the same hyperfine parameters to those measured in bulk TiO{sub 2} and another fraction characterized by a quadrupole frequency and asymmetry parameters with higher values, as observed in thin TiO{sub 2} films and correlated with point defects. The results are discussed emphasizing the differences for Cd and In as defect traps on TiO{sub 2}.

  16. Fermi surface contours obtained from scanning tunneling microscope images around surface point defects

    International Nuclear Information System (INIS)

    Khotkevych-Sanina, N V; Kolesnichenko, Yu A; Van Ruitenbeek, J M

    2013-01-01

    We present a theoretical analysis of the standing wave patterns in scanning tunneling microscope (STM) images, which occur around surface point defects. We consider arbitrary dispersion relations for the surface states and calculate the conductance for a system containing a small-size tunnel contact and a surface impurity. We find rigorous theoretical relations between the interference patterns in the real-space STM images, their Fourier transforms and the Fermi contours of two-dimensional electrons. We propose a new method for reconstructing Fermi contours of surface electron states, directly from the real-space STM images around isolated surface defects. (paper)

  17. Point and line defects which are common to both degraded light emitting diodes and plastically deformed GaAs

    International Nuclear Information System (INIS)

    Liliental, Z.

    1983-01-01

    Similar dipoles with Burger's vector b = a/2 [101] (also referred to as dark line defects) were found in the active layer of degraded light emitting diodes (LED's) and in plastically deformed GaAs. The dependence of characteristic x-ray production of electron channeling conditions has been used in an electron microscope to study point defects in the neighbourhood of these dipoles. Our results are consistent with the occurence of I/sub As/, I/sub As/ +V/sub Ga/, V/sub Ga/ and IAs in descending order of likelihood. Of these, I/sub As/ +V/sub Ga/ can explain the dislocation climb without any extra point defects involved in such process

  18. Modeling defect production in high energy collision cascades

    International Nuclear Information System (INIS)

    Heinisch, H.L.; Singh, B.N.

    1993-01-01

    A multi-model approach roach (MMA) to simulating defect production processes at the atomic scale is described that incorporates molecular dynamics (MD), binary collision approximation (BCA) calculations and stochastic annealing simulations. The central hypothesis of the MMA is that the simple, fast computer codes capable of simulating large numbers of high energy cascades (e.g., BCA codes) can be made to yield the correct defect configurations when their parameters are calibrated using the results of the more physically realistic MD simulations. The calibration procedure is investigated using results of MD simulations of 25 keV cascades in copper. The configurations of point defects are extracted from the MD cascade simulations at the end of the collisional phase, similar to the information obtained with a binary collision model. The MD collisional phase defect configurations are used as input to the ALSOME annealing simulation code, and values of the ALSOME quenching parameters are determined that yield the best fit to the post-quenching defect configurations of the MD simulations

  19. The evolution of interaction between grain boundary and irradiation-induced point defects: Symmetric tilt GB in tungsten

    Science.gov (United States)

    Li, Hong; Qin, Yuan; Yang, Yingying; Yao, Man; Wang, Xudong; Xu, Haixuan; Phillpot, Simon R.

    2018-03-01

    Molecular dynamics method is used and scheme of calculational tests is designed. The atomic evolution view of the interaction between grain boundary (GB) and irradiation-induced point defects is given in six symmetric tilt GB structures of bcc tungsten with the energy of the primary knock-on atom (PKA) EPKA of 3 and 5 keV and the simulated temperature of 300 K. During the collision cascade with GB structure there are synergistic mechanisms to reduce the number of point defects: one is vacancies recombine with interstitials, and another is interstitials diffuse towards the GB with vacancies almost not move. The larger the ratio of the peak defect zone of the cascades overlaps with the GB region, the statistically relative smaller the number of surviving point defects in the grain interior (GI); and when the two almost do not overlap, vacancy-intensive area generally exists nearby GBs, and has a tendency to move toward GB with the increase of EPKA. In contrast, the distribution of interstitials is relatively uniform nearby GBs and is affected by the EPKA far less than the vacancy. The GB has a bias-absorption effect on the interstitials compared with vacancies. It shows that the number of surviving vacancies statistically has increasing trend with the increase of the distance between PKA and GB. While the number of surviving interstitials does not change much, and is less than the number of interstitials in the single crystal at the same conditions. The number of surviving vacancies in the GI is always larger than that of interstitials. The GB local extension after irradiation is observed for which the interstitials absorbed by the GB may be responsible. The designed scheme of calculational tests in the paper is completely applicable to the investigation of the interaction between other types of GBs and irradiation-induced point defects.

  20. Anisotropy migration of self-point defects in dislocation stress fields in BCC Fe and FCC Cu

    International Nuclear Information System (INIS)

    Sivak, A.B.; Chernov, V.M.; Dubasova, N.A.; Romanov, V.A.

    2007-01-01

    Spatial dependence of the interaction energies of self-point defects (vacancies and self interstitial atoms in stable, metastable and saddle point configurations) with edge dislocations in slip systems {1 1 0} and {1 0 0} in BCC Fe and {1 1 1} in FCC Cu was calculated using the anisotropic theory of elasticity and molecular statics (hybrid method). The migration pathways of vacancies and SIA ( dumbbell in Fe and dumbbell in Cu) along which the migration of the defects with the lowest energy barriers were defined in the presence of the dislocation stress fields. These pathways are significantly different in the stress fields of dislocations

  1. Structural peculiarities and point defects of bulk-ZnO single crystals

    International Nuclear Information System (INIS)

    Kaurova, I.A.; Kuz’micheva, G.M.; Rybakov, V.B.; Cousson, A.; Gayvoronsky, V.Ya.

    2014-01-01

    Highlights: • ZnO single crystals of different color were grown by the hydrothermal method. • Point defects in ZnO have been firstly investigated by neutron diffraction. • Presence of additional reflections caused by kinetic growth effects was revealed. • The relationship between the color and zinc and oxygen vacancies was found. • Photoinduced variation of transmittance versus the CW laser intensity was analyzed. - Abstract: ZnO single crystals are related to promising direct wide band gap semiconductor materials belonging to the A II B VI type of compounds with wurtzite structure. “Unintentional” n-type conductivity in ZnO may be caused by zinc and oxygen vacancies, and interstitial zinc atoms. To date, the comprehensive structural investigation and analysis of point defects in ZnO is absent in literature. Green, light green and almost colorless ZnO single crystals grown by the hydrothermal method in concentrated alkali solutions 4M(KOH) + 1M(LiOH) + 0.1M(NH 4 OH) on monohedral seeds [0 0 0 1] at crystallization temperatures in the range of 330–350 °C and pressures in the range of 30–50 MPa have been firstly investigated by neutron diffraction. It was revealed the presence of additional reflections (∼12–∼16%) for all the crystals caused by kinetic growth effects that give grounds to assign them to the space group P3 rather than to P6 3 mc. Analysis of the refined compositions together with the color of ZnO crystals does not rule out the relationship between the color and vacancies in the zinc and oxygen positions whose concentration decreases with the discoloration of the samples. The analysis of the photoinduced variation of the total and on-axis transmittance versus the CW laser intensity showed that the colored samples have profound deep defects related to oxygen vacancies

  2. Electronic and ionic conductivities and point defects in ytterbium sesquioxide at high temperature

    International Nuclear Information System (INIS)

    Carpentier, J.-L.; Lebrun, A.; Perdu, F.; Tellier, P.

    1982-01-01

    From the study of complex impedance diagrams applied to a symmetric cell Pt-Yb 2 O 3 -Pt, the authors have shown the mixed character of electrical conduction within the ytterbium sesquioxide. The measurements were performed at thermodynamic equilibrium in the temperature range from 1423 to 1623 K and the partial pressure of oxygen range from 10 -12 to 1 atm. The variations of ionic and electronic conductivity as a function of Psub(O 2 ) were interpreted in terms of four different point defects in the general case of a Frenkel disorder. The relative contributions and the activation energies of conduction of these different defects were determined. (author)

  3. Pseudo-dynamic source modelling with 1-point and 2-point statistics of earthquake source parameters

    KAUST Repository

    Song, S. G.; Dalguer, L. A.; Mai, Paul Martin

    2013-01-01

    statistical framework that governs the finite-fault rupture process with 1-point and 2-point statistics of source parameters in order to quantify the variability of finite source models for future scenario events. We test this method by extracting 1-point

  4. A study of point defects in UO 2+x and their impact upon fuel properties

    OpenAIRE

    Ma , Yue

    2017-01-01

    Uranium dioxide is an oxygen excess, non-stoichiometric, fluorite material which exists over a wide range of compositions. At temperatures and oxygen activities that are relevant to its in-reactor behaviour, it has been reported that various types of point defects and clusters thereof may exist with different charge states and different compositions on both the anion and cation sublattices. These defects have a major influence on certain key engineering properties such as cation self -diffusi...

  5. Intrinsic point-defect balance in self-ion-implanted ZnO.

    Science.gov (United States)

    Neuvonen, Pekka T; Vines, Lasse; Svensson, Bengt G; Kuznetsov, Andrej Yu

    2013-01-04

    The role of excess intrinsic atoms for residual point defect balance has been discriminated by implanting Zn or O ions into Li-containing ZnO and monitoring Li redistribution and electrical resistivity after postimplant anneals. Strongly Li-depleted regions were detected in the Zn-implanted samples at depths beyond the projected range (R(p)) upon annealing ≥ 600 °C, correlating with a resistivity decrease. In contrast, similar anneals of the O-implanted samples resulted in Li accumulation at R(p) and an increased resistivity. Control samples implanted with Ar or Ne ions, yielding similar defect production as for the Zn or O implants but with no surplus of intrinsic atoms, revealed no Li depletion. Thus, the depletion of Li shows evidence of excess Zn interstitials (Zn(I)) being released during annealing of the Zn-implanted samples. These Zn(I)'s convert substitutional Li atoms (Li(Zn)) into highly mobile interstitial ones leading to the strongly Li-depleted regions. In the O-implanted samples, the high resistivity provides evidence of stable O(I)-related acceptors.

  6. Phase Defects as a Measure of Disorder in Traveling-Wave Convection

    International Nuclear Information System (INIS)

    La Porta, A.; Surko, C.M.

    1996-01-01

    Spatiotemporal disorder is studied in traveling-wave convection in an ethanol-water mixture. A technique for calculating the complex order parameter of the pattern is described, and the identification of phase defects is demonstrated. Point defects, domain boundaries, and standing wave patterns are shown to produce unique defect structures. The transition from a disordered state to a more ordered pattern is described in terms of the dynamics of defects and their statistics. copyright 1996 The American Physical Society

  7. Many-Body Theory of Proton-Generated Point Defects for Losses of Electron Energy and Photons in Quantum Wells

    Science.gov (United States)

    Huang, Danhong; Iurov, Andrii; Gao, Fei; Gumbs, Godfrey; Cardimona, D. A.

    2018-02-01

    The effects of point defects on the loss of either energies of ballistic electron beams or incident photons are studied by using a many-body theory in a multi-quantum-well system. This theory includes the defect-induced vertex correction to a bare polarization function of electrons within the ladder approximation, and the intralayer and interlayer screening of defect-electron interactions is also taken into account in the random-phase approximation. The numerical results of defect effects on both energy-loss and optical-absorption spectra are presented and analyzed for various defect densities, numbers of quantum wells, and wave vectors. The diffusion-reaction equation is employed for calculating distributions of point defects in a layered structure. For completeness, the production rate for Frenkel-pair defects and their initial concentration are obtained based on atomic-level molecular-dynamics simulations. By combining the defect-effect, diffusion-reaction, and molecular-dynamics models with an available space-weather-forecast model, it will be possible in the future to enable specific designing for electronic and optoelectronic quantum devices that will be operated in space with radiation-hardening protection and, therefore, effectively extend the lifetime of these satellite onboard electronic and optoelectronic devices. Specifically, this theory can lead to a better characterization of quantum-well photodetectors not only for high quantum efficiency and low dark current density but also for radiation tolerance or mitigating the effects of the radiation.

  8. Statistical thermodynamics -- A tool for understanding point defects in intermetallic compounds

    International Nuclear Information System (INIS)

    Ipser, H.; Krachler, R.

    1996-01-01

    The principles of the derivation of statistical-thermodynamic models to interpret the compositional variation of thermodynamic properties in non-stoichiometric intermetallic compounds are discussed. Two types of models are distinguished: the Bragg-Williams type, where the total energy of the crystal is taken as the sum of the interaction energies of all nearest-neighbor pairs of atoms, and the Wagner-Schottky type, where the internal energy, the volume, and the vibrational entropy of the crystal are assumed to be linear functions of the numbers of atoms or vacancies on the different sublattices. A Wagner-Schottky type model is used for the description of two examples with different crystal structures: for β'-FeAl (with B2-structure) defect concentrations and their variation with composition are derived from the results of measurements of the aluminum vapor pressure, the resulting values are compared with results of other independent experimental methods; for Rh 3 Te 4 (with an NiAs-derivative structure) the defect mechanism responsible for non-stoichiometry is worked out by application of a theoretical model to the results of tellurium vapor pressure measurements. In addition it is shown that the shape of the activity curve indicates a certain sequence of superstructures. In principle, there are no limitations to the application of statistical thermodynamics to experimental thermodynamic data as long as these are available with sufficient accuracy, and as long as it is ensured that the distribution of the point defects is truly random, i.e. that there are no aggregates of defects

  9. High angle grain boundaries as sources or sinks for point defects

    Energy Technology Data Exchange (ETDEWEB)

    Balluffi, R.W.

    1979-09-01

    A secondary grain boundary dislocation climb model for high angle grain boundaries as sources/sinks for point defects is described in the light of recent advances in our knowledge of grain boundary structure. Experimental results are reviewed and are then compared with the expected behavior of the proposed model. Reasonably good consistency is found at the level of our present understanding of the subject. However, several gaps in our present knowledge still exist, and these are identified and discussed briefly.

  10. Pseudo-dynamic source modelling with 1-point and 2-point statistics of earthquake source parameters

    KAUST Repository

    Song, S. G.

    2013-12-24

    Ground motion prediction is an essential element in seismic hazard and risk analysis. Empirical ground motion prediction approaches have been widely used in the community, but efficient simulation-based ground motion prediction methods are needed to complement empirical approaches, especially in the regions with limited data constraints. Recently, dynamic rupture modelling has been successfully adopted in physics-based source and ground motion modelling, but it is still computationally demanding and many input parameters are not well constrained by observational data. Pseudo-dynamic source modelling keeps the form of kinematic modelling with its computational efficiency, but also tries to emulate the physics of source process. In this paper, we develop a statistical framework that governs the finite-fault rupture process with 1-point and 2-point statistics of source parameters in order to quantify the variability of finite source models for future scenario events. We test this method by extracting 1-point and 2-point statistics from dynamically derived source models and simulating a number of rupture scenarios, given target 1-point and 2-point statistics. We propose a new rupture model generator for stochastic source modelling with the covariance matrix constructed from target 2-point statistics, that is, auto- and cross-correlations. Our sensitivity analysis of near-source ground motions to 1-point and 2-point statistics of source parameters provides insights into relations between statistical rupture properties and ground motions. We observe that larger standard deviation and stronger correlation produce stronger peak ground motions in general. The proposed new source modelling approach will contribute to understanding the effect of earthquake source on near-source ground motion characteristics in a more quantitative and systematic way.

  11. Evaluation of pipeline defect's characteristic axial length via model-based parameter estimation in ultrasonic guided wave-based inspection

    International Nuclear Information System (INIS)

    Wang, Xiaojuan; Tse, Peter W; Dordjevich, Alexandar

    2011-01-01

    The reflection signal from a defect in the process of guided wave-based pipeline inspection usually includes sufficient information to detect and define the defect. In previous research, it has been found that the reflection of guided waves from even a complex defect primarily results from the interference between reflection components generated at the front and the back edges of the defect. The respective contribution of different parameters of a defect to the overall reflection can be affected by the features of the two primary reflection components. The identification of these components embedded in the reflection signal is therefore useful in characterizing the concerned defect. In this research, we propose a method of model-based parameter estimation with the aid of the Hilbert–Huang transform technique for the purpose of decomposition of a reflection signal to enable characterization of the pipeline defect. Once two primary edge reflection components are decomposed and identified, the distance between the reflection positions, which closely relates to the axial length of the defect, could be easily and accurately determined. Considering the irregular profiles of complex pipeline defects at their two edges, which is often the case in real situations, the average of varied axial lengths of such a defect along the circumference of the pipeline is used in this paper as the characteristic value of actual axial length for comparison purpose. The experimental results of artificial defects and real corrosion in sample pipes were considered in this paper to demonstrate the effectiveness of the proposed method

  12. The establishment of atrial septal defect model with interventional management canine: its applied anatomy and technical points

    International Nuclear Information System (INIS)

    Zhu Yufeng; Huang Xinmiao; Bei Yuan; Wang Wei; Hu Jianqiang; Qin Yongwen

    2010-01-01

    Objective: To provide the relevant applied anatomic information for the preparation of atrial septal defect (ASD) model with transcatheter management in canine,and to discuss the technical points in making ASD model under DSA guidance. Methods: Anatomical measurements of the heart specimens,which were obtained from 15 healthy adult hybrid dogs (9 males and 6 females), were performed, from which the relevant anatomic parameters of the atrial septum were calculated. Cardiac 3D reconstruction with 64-sliced spiral CT scan was carried out in 5 dogs and the results were analyzed. According to the trans-illuminated position and angle obtained from 3D reconstruction images both the puncturing of the atrial septum with Brokenbrough needle and the balloon dilatation under fluoroscopic guidance were conducted in 20 dogs (body weight 17 -22 kg) to prepare ASD model. Results: The length and the width of the interauricular septum were (17.8 ± 4.3) mm and (14.5 ± 3.8) mm, respectively. The oval fossa was (11.2 ± 2.7) mm long and (8.7±1.9) mm wide. The distance from the central point of oval fossa to the central point of the orifice of coronary sinus was (7.2 ± 1.3) mm, which was (9.9 ± 1.5) mm to the center of the membranous atrial septum, (13.6 ± 3.1) mm to the middle point of septal tricuspid valve, (12.1 ± 2.3) mm to the central point of the bottom of aortic eminence and (11.3 ± 1.9) mm to the middle point of anterior bicuspid valve. The angle between atrial septal plane and sagittal plane was 15 degree ± 5 degree, and the angle between atrial septal plane and coronal plane was 75 degree ± 5 degree. Thus, the puncture of the interauricular septum was carried out with the dog in right anterior oblique position at 75 degree ± 5 degree. Of the total 20 dogs, ASD model was successfully established in 18, failure of the puncturing occurred in the remaining two, of which one died of cardiac tamponade after the procedure and the other one died of mistakenly puncturing

  13. Simulation of surface crack initiation induced by slip localization and point defects kinetics

    International Nuclear Information System (INIS)

    Sauzay, Maxime; Liu, Jia; Rachdi, Fatima

    2014-01-01

    Crack initiation along surface persistent slip bands (PSBs) has been widely observed and modelled. Nevertheless, from our knowledge, no physically-based fracture modelling has been proposed and validated with respect to the numerous recent experimental data showing the strong relationship between extrusion and microcrack initiation. The whole FE modelling accounts for: - localized plastic slip in PSBs; - production and annihilation of vacancies induced by cyclic slip. If temperature is high enough, point defects may diffuse in the surrounding matrix due to large concentration gradients, allowing continuous extrusion growth in agreement with Polak's model. At each cycle, the additional atoms diffusing from the matrix are taken into account by imposing an incremental free dilatation; - brittle fracture at the interfaces between PSBs and their surrounding matrix which is simulated using cohesive zone modelling. Any inverse fitting of parameter is avoided. Only experimental single crystal data are used such as hysteresis loops and resistivity values. Two fracture parameters are required: the {111} surface energy which depends on environment and the cleavage stress which is predicted by the universal binding energy relationship. The predicted extrusion growth curves agree rather well with the experimental data published for copper and the 316L steel. A linear dependence with respect to PSB length, thickness and slip plane angle is predicted in agreement with recent AFM measurement results. Crack initiation simulations predict fairly well the effects of PSB length and environment for copper single and poly-crystals. (authors)

  14. The influence of point defects on the entropy profiles of Lithium Ion Battery cathodes: a lattice-gas Monte Carlo study

    International Nuclear Information System (INIS)

    Mercer, Michael P.; Finnigan, Sophie; Kramer, Denis; Richards, Daniel; Hoster, Harry E.

    2017-01-01

    In-situ diagnostic tools have become established to as a means to understanding the aging processes that occur during charge/discharge cycles in Li-ion batteries (LIBs). One electrochemical thermodynamic technique that can be applied to this problem is known as entropy profiling. Entropy profiles are obtained by monitoring the variation in the open circuit potential as a function of temperature. The peaks in these profiles are related to phase transitions, such as order/disorder transitions, in the lattice. In battery aging studies of cathode materials, the peaks become suppressed but the mechanism by which this occurs is currently poorly understood. One suggested mechanism is the formation of point defects. Intentional modifications of LIB electrodes may also lead to the introduction of point defects. To gain quantitative understanding of the entropy profile changes that could be caused by point defects, we have performed Monte Carlo simulations on lattices of variable defect content. As a model cathode, we have chosen manganese spinel, which has a well-described order-disorder transition when it is half filled with Li. We assume, in the case of trivalent defect substitution (M = Cr,Co) that each defect M permanently pins one Li atom. This assumption is supported by Density Functional Theory (DFT) calculations. Assuming that the distribution of the pinned Li sites is completely random, we observe the same trend in the change in partial molar entropy with defect content as observed in experiment: the peak amplitudes become increasing suppressed as the defect fraction is increased. We also examine changes in the configurational entropy itself, rather than the entropy change, as a function of the defect fraction and analyse these results with respect to the ones expected for an ideal solid solution. We discuss the implications of the quantitative differences between some of the results obtained from the model and the experimentally observed ones.

  15. Ionization-induced rearrangement of defects in silicon

    International Nuclear Information System (INIS)

    Vinetskij, V.L.; Manojlo, M.A.; Matvijchuk, A.S.; Strikha, V.I.; Kholodar', G.A.

    1988-01-01

    Ionizing factor effect on defect rearrangement in silicon including centers with deep local electron levels in the p-n-transition region is considered. Deep center parameters were determined using non-steady-state capacity spectroscopy of deep levels (NCDLS) method. NCDLS spectrum measurement was performed using source p + -n - diodes and after their irradiation with 15 keV energy electrons or laser pulses. It is ascertained that in silicon samples containing point defect clusters defect rearrangement under ionizing factor effect takes place, i.e. deep level spectra are changed. This mechanism is efficient in case of silicon irradiation with subthreshold energy photons and electrons and can cause degradation of silicon semiconducting structures

  16. The thermal expansion of gold: point defect concentrations and pre-melting in a face-centred cubic metal.

    Science.gov (United States)

    Pamato, Martha G; Wood, Ian G; Dobson, David P; Hunt, Simon A; Vočadlo, Lidunka

    2018-04-01

    On the basis of ab initio computer simulations, pre-melting phenomena have been suggested to occur in the elastic properties of hexagonal close-packed iron under the conditions of the Earth's inner core just before melting. The extent to which these pre-melting effects might also occur in the physical properties of face-centred cubic metals has been investigated here under more experimentally accessible conditions for gold, allowing for comparison with future computer simulations of this material. The thermal expansion of gold has been determined by X-ray powder diffraction from 40 K up to the melting point (1337 K). For the entire temperature range investigated, the unit-cell volume can be represented in the following way: a second-order Grüneisen approximation to the zero-pressure volumetric equation of state, with the internal energy calculated via a Debye model, is used to represent the thermal expansion of the 'perfect crystal'. Gold shows a nonlinear increase in thermal expansion that departs from this Grüneisen-Debye model prior to melting, which is probably a result of the generation of point defects over a large range of temperatures, beginning at T / T m > 0.75 (a similar homologous T to where softening has been observed in the elastic moduli of Au). Therefore, the thermodynamic theory of point defects was used to include the additional volume of the vacancies at high temperatures ('real crystal'), resulting in the following fitted parameters: Q = ( V 0 K 0 )/γ = 4.04 (1) × 10 -18  J, V 0 = 67.1671 (3) Å 3 , b = ( K 0 ' - 1)/2 = 3.84 (9), θ D = 182 (2) K, ( v f /Ω)exp( s f / k B ) = 1.8 (23) and h f = 0.9 (2) eV, where V 0 is the unit-cell volume at 0 K, K 0 and K 0 ' are the isothermal incompressibility and its first derivative with respect to pressure (evaluated at zero pressure), γ is a Grüneisen parameter, θ D is the Debye temperature, v f , h f and s f are the vacancy formation volume, enthalpy and entropy

  17. Ab initio study of point defects in PbSe and PbTe: Bulk and nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Wrasse, E. O. [Instituto de Física, Universidade Federal de Uberlândia, 38408-100, Uberlândia, MG, Brazil and Departamento de Física, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil); Venezuela, P. [Instituto de Física, Universidade Federal Fluminense, 24210-346, Niteroi, RJ (Brazil); Baierle, R. J., E-mail: rbaierle@smail.ufsm.br [Departamento de Física, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil)

    2014-11-14

    First principles investigations, within the spin-polarized density functional theory, are performed to study energetic stability and electronic properties of point defects (vacancies and antisites) in PbSe and PbTe: bulk and nanowire (NW). Our results show that the energetic stability of these defects is ruled by relaxation process. These defects have lower formation energies in the nanowire structures as compared to the bulk, being more stable in the surface of the NWs. We also show that in the bulk system only one charge state is stable, otherwise, due to the larger band gaps, more than one charge state may be stable in the NWs. In addition, we have investigated how the presence of intrinsic defects affects the electronic properties of bulk and NW systems. Vacancies give rise to new electronic states near to the edges of the valence and conduction bands while the energetic position of the electronic states from antisites depends on the charge state, being localized inside the band gap or near the edges of the valence or conduction bands. We discuss how these changes in the electronic properties due to intrinsic defects may affect the thermoelectric properties of PbSe and PbTe NWs.

  18. Use of Isobestic and Isoemission Points in Absorption and Luminescence Spectra for Study of the Transformation of Radiation Defects in Lithium Fluoride

    Science.gov (United States)

    Voitovich, A. P.; Kalinov, V. S.; Stupak, A. P.; Runets, L. P.

    2015-03-01

    Isobestic and isoemission points are recorded in the combined absorption and luminescence spectra of two types of radiation defects involved in complex processes consisting of several simultaneous parallel and sequential reactions. These points are observed if a constant sum of two terms, each formed by the product of the concentration of the corresponding defect and a characteristic integral coefficient associated with it, is conserved. The complicated processes involved in the transformation of radiation defects in lithium fluoride are studied using these points. It is found that the ratio of the changes in the concentrations of one of the components and the reaction product remains constant in the course of several simultaneous reactions.

  19. Variational estimates of point-kinetics parameters

    International Nuclear Information System (INIS)

    Favorite, J.A.; Stacey, W.M. Jr.

    1995-01-01

    Variational estimates of the effect of flux shifts on the integral reactivity parameter of the point-kinetics equations and on regional power fractions were calculated for a variety of localized perturbations in two light water reactor (LWR) model problems representing a small, tightly coupled core and a large, loosely coupled core. For the small core, the flux shifts resulting from even relatively large localized reactivity changes (∼600 pcm) were small, and the standard point-kinetics approximation estimates of reactivity were in error by only ∼10% or less, while the variational estimates were accurate to within ∼1%. For the larger core, significant (>50%) flux shifts occurred in response to local perturbations, leading to errors of the same magnitude in the standard point-kinetics approximation of the reactivity worth. For positive reactivity, the error in the variational estimate of reactivity was only a few percent in the larger core, and the resulting transient power prediction was 1 to 2 orders of magnitude more accurate than with the standard point-kinetics approximation. For a large, local negative reactivity insertion resulting in a large flux shift, the accuracy of the variational estimate broke down. The variational estimate of the effect of flux shifts on reactivity in point-kinetics calculations of transients in LWR cores was found to generally result in greatly improved accuracy, relative to the standard point-kinetics approximation, the exception being for large negative reactivity insertions with large flux shifts in large, loosely coupled cores

  20. Ab initio study of Cr interactions with point defects in bcc Fe

    International Nuclear Information System (INIS)

    Olsson, P.; Domain, Ch.; Wallenius, J.

    2008-01-01

    Full text of publication follows. Ferritic martensitic steels are candidate structural materials for fast neutron reactors, and in particular high-Cr reduced-activation steels. In Fe-Cr alloys, Cr plays a major role in the radiation-induced evolution of the mechanical properties. Using ab initio calculations based on density functional theory, the properties of Cr in α-Fe have been investigated. The intrinsic point defect formation energies were found to be larger in model bcc Cr as compared to those in ferromagnetic bcc Fe. The interactions of Cr with point defects (vacancy and self interstitials) have been characterised. Single Cr atoms interact weakly with vacancies but significantly with self-interstitial atoms. Mixed interstitials of any interstitial symmetry are bound. Configurations where two Cr atoms are in nearest neighbour position are generally unfavourable in bcc Fe except when they are a part of a interstitial complex. Mixed interstitials do not have as strong directional stability as pure Fe interstitials have. The effects on the results using the atom description scheme of either the ultrasoft pseudo-potential (USPP) or the projector augmented wave (PAW) formalisms are connected to the differences in local magnetic moments that the two methods predict. As expected for the Fe-Cr system, the results obtained using the PAW method are more reliable than the ones obtained with USPP. (authors)

  1. Scanning tip measurement for identification of point defects

    Directory of Open Access Journals (Sweden)

    Raineri Vito

    2011-01-01

    Full Text Available Abstract Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM.

  2. A review on the effects of TiO2 surface point defects on CO2 photoreduction with H2O

    Directory of Open Access Journals (Sweden)

    Huilei Zhao

    2017-03-01

    Full Text Available Photocatalytic reduction of CO2 with water by photocatalysts such as TiO2 to produce solar fuels is an attractive approach to alleviate the environmental influences of greenhouse gases and in the meantime produce valuable carbon-neutral fuels. Among the materials properties that affect catalytic activity of CO2 photoreduction, the point defect on TiO2 is one of the most important but not frequently addressed and well understood in the literature. In this review, we have examined the major influences of TiO2 point defects on CO2 photoreduction with H2O, by changing the catalysts' gas adsorption capabilities, optical properties, and electronic structures. In addition, the performances of various defective TiO2 toward CO2 photoreduction are summarized and compared in terms of productivity, selectivity, and stability. We hope this review can contribute to understanding the mechanism of CO2 photoreduction on defective TiO2 and provide insights to the design of highly efficient defect-rich TiO2 to boost the CO2 utilization.

  3. Research Update: Point defects in CdTexSe1−x crystals grown from a Te-rich solution for applications in detecting radiation

    International Nuclear Information System (INIS)

    Gul, R.; Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Yang, G.; James, R. B.; Lee, W.; Cui, Y.; Burger, A.

    2015-01-01

    We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Current Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from 1 to 30 V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material

  4. Defect Shape Recovering by Parameter Estimation Arising in Eddy Current Testing

    International Nuclear Information System (INIS)

    Kojima, Fumio

    2003-01-01

    This paper is concerned with a computational method for recovering a crack shape of steam generator tubes of nuclear plants. Problems on the shape identification are discussed arising in the characterization of a structural defect in a conductor using data of eddy current inspection. A surface defect on the generator tube ran be detected as a probe impedance trajectory by scanning a pancake type coil. First, a mathematical model of the inspection process is derived from the Maxwell's equation. Second, the input and output relation is given by the approximate model by virtue of the hybrid use of the finite element and boundary element method. In that model, the crack shape is characterized by the unknown coefficients of the B-spline function which approximates the crack shape geometry. Finally, a parameter estimation technique is proposed for recovering the crack shape using data from the probe coil. The computational experiments were successfully tested with the laboratory data

  5. Strain effects on point defects and chain-oxygen order-disorder transition in 123 cuprate compounds

    International Nuclear Information System (INIS)

    Su Haibin; Welch, David O.; Wong-Ng, Winnie

    2004-01-01

    The energetics of Schottky defects in 123 cuprate superconductor series RBa 2 Cu 3 O 7 (where R=lanthandies) and YA 2 Cu 3 O 7 (A=alkali earths), were found to have unusual relations if one considers only the volumetric strain. Our calculations reveal the effect of nonuniform changes of interatomic distances within the R-123 structures, introduced by doping homovalent elements, on the Schottky defect formation energy. The energy of formation of Frenkel pair defects, which is an elementary disordering event, in 123 compounds can be substantially altered under both stress and chemical doping. Scaling the oxygen-oxygen short-range repulsive parameter using the calculated formation energy of Frenkel pair defects, the transition temperature between orthorhombic and tetragonal phases is computed by quasichemical approximations (QCA's). The theoretical results illustrate the same trend as the experimental measurements in that the larger the ionic radius of R, the lower the orthorhombic/tetragonal phase transition temperature. This study provides strong evidence of the strain effects on order-disorder transition due to oxygens in the CuO chain sites

  6. Prediction of point-defect migration energy barriers in alloys using artificial intelligence for atomistic kinetic Monte Carlo applications

    Energy Technology Data Exchange (ETDEWEB)

    Castin, N. [Structural Materials Group, Nuclear Materials Science Institute, Studiecentrum voor Kerneenergie Centre d' etude de l' energie nucleaire (SCK CEN), Boeretang 200, B-2400 Mol (Belgium); Universite Libre de Bruxelles (ULB), Physique des Solides Irradies et Nanostructures (PSIN), CP234 Boulevard du triomphe, Brussels (Belgium); Malerba, L. [Structural Materials Group, Nuclear Materials Science Institute, Studiecentrum voor Kerneenergie Centre d' etude de l' energie nucleaire (SCK CEN), Boeretang 200, B-2400 Mol (Belgium)], E-mail: lmalerba@sckcen.be

    2009-09-15

    We significantly improved a previously proposed method to take into account chemical and also relaxation effects on point-defect migration energy barriers, as predicted by an interatomic potential, in a rigid lattice atomistic kinetic Monte Carlo simulation. Examples of energy barriers are rigorously calculated, including chemical and relaxation effects, as functions of the local atomic configuration, using a nudged elastic bands technique. These examples are then used to train an artificial neural network that provides the barriers on-demand during the simulation for each configuration encountered by the migrating defect. Thanks to a newly developed training method, the configuration can include a large number of neighbour shells, thereby properly including also strain effects. Satisfactory results have been obtained when the configuration includes different chemical species only. The problems encountered in the extension of the method to configurations including any number of point-defects are stated and solutions to tackle them are sketched.

  7. Study of point defect mobilities in zirconium during electron irradiation in a HVEM

    International Nuclear Information System (INIS)

    Griffiths, M.

    1993-01-01

    A high voltage electron microscope (HVEM) was used to investigate the nature of intrinsic point defects in α-Zr by direct observation of dislocation climb and cavity growth or shrinkage. The material used was Marz-grade Zr that had been pre-irradiated with neutrons at about 740 K in the Dounreay Fast Reactor. Dislocation loops of vacancy character that had been produced during the neutron irradiation were studied by further irradiation with electrons in the HVEM. Growth of the loops was observed at temperatures as low as 230 K, indicating that, under the conditions of the experiment, some vacancy-type defects were mobile in the temperature regime 230 K-300 K. The nature of these defects is unknown. One possibility is that these defects are not intrinsic in nature, but may be vacancy-Fe complexes. In addition to the climb of dislocation loops, c-component network dislocations and cavities were also studied. Basal plane climb of the network dislocations was observed at 573 K, but was not readily apparent at 320 K. This suggests that preferred climb planes (and possibly loop habit planes) are sensitive to temperature. Cavities that were already in the foil after neutron irradiation or were induced by electron irradiation grew along the c-axis and shrank along a-directions during electron irradiation. This radiation-induced shape change of the cavities strongly suggests the existence of a diffusional anisotropy difference between interstitials and vacancies in α-Zr. (Author) 14 figs., 22 refs

  8. Quantitative determination of charge transfer parameters of photorefractive BaTiO3:Rh from EPR-based defect studies

    International Nuclear Information System (INIS)

    Veber, C; Meyer, M; Schirmer, O F; Kaczmarek, M

    2003-01-01

    Optical absorption bands can be used as fingerprints of defects and their charge states in insulators and semiconductors. On the basis of the photochromicity usually shown by such materials, a method is introduced by which the optical bands are assigned to the defects and their charge states. It is based on simultaneous measurements of the light-induced changes of the optical absorption and of the corresponding EPR signals. Moreover, indirectly optical bands of EPR-silent defects can also be labelled in this way, strongly widening the scope of EPR based defect studies. We apply this method to the infrared-sensitive photorefractive system BaTiO 3 :Rh, where illumination leads to recharging among the valence states Rh 5+ , Rh 4+ and Rh 3+ . The values of all parameters governing the charge transfers responsible are inferred from the magnitude of the absorption bands, the absolute determination of their absorption cross-sections and the kinetics of the absorption changes under illumination. In contrast to previous investigations, these parameters are deduced independently of photorefractive measurements

  9. Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

    Science.gov (United States)

    Sakwe, S. A.; Müller, R.; Wellmann, P. J.

    2006-04-01

    We have developed a KOH-based defect etching procedure for silicon carbide (SiC), which comprises in situ temperature measurement and control of melt composition. As benefit for the first time reproducible etching conditions were established (calibration plot, etching rate versus temperature and time); the etching procedure is time independent, i.e. no altering in KOH melt composition takes place, and absolute melt temperature values can be set. The paper describes this advanced KOH etching furnace, including the development of a new temperature sensor resistant to molten KOH. We present updated, absolute KOH etching parameters of n-type SiC and new absolute KOH etching parameters for low and highly p-type doped SiC, which are used for quantitative defect analysis. As best defect etching recipes we found T=530 °C/5 min (activation energy: 16.4 kcal/mol) and T=500 °C/5 min (activation energy: 13.5 kcal/mol) for n-type and p-type SiC, respectively.

  10. A compensating point defect in carbon-doped GaN substrates studied with electron paramagnetic resonance spectroscopy

    Science.gov (United States)

    Willoughby, W. R.; Zvanut, M. E.; Paudel, Subash; Iwinska, M.; Sochacki, T.; Bockowski, M.

    2018-04-01

    Electron paramagnetic resonance (EPR) spectroscopy was used to investigate a type of point defect present in 1019 cm-3 carbon-doped GaN substrates grown by hydride vapor phase epitaxy. A broad, isotropic resonance at g ˜ 1.987 was observed at 3.5 K, and the EPR intensity increased with illumination at energies greater than 2.75 eV and decreased with photon energies greater than 0.95 eV. The latter is consistent with a deep level of 0.95 eV above the valence band maximum and implies that the associated defect likely participates in donor compensation. The ionization energy for this defect is close to the predicted value for the (-/0) transition level of CN and transition levels associated with Ga vacancies such as VGa and VGa-ON-2H.

  11. A study of point defects in quenched stainless steels

    International Nuclear Information System (INIS)

    Kheloufi, Khelifa.

    1977-07-01

    Thin foils of stainless steels (18%Cr, 14%Ni) containing boron (50x10 -6 ) and stabilised with titanium have been quenched at different rates in order to observe secondary defects by transmission electron microscopy. A rapid quenching in gallium has not given any secondary defects either before or after annealing. But samples quenched from temperatures greater than 800 0 C-900 0 C exhibit a dislocation density approximately 10 9 cm/cm 3 . A vacancy concentration less than 10 -6 has been observed by positron annihilation technique. After a moderate quenching, any secondary defects has been observed. It is thus clear that boron does not favour the secondary defects formation as does phosphorus [fr

  12. An Aggregated Method for Determining Railway Defects and Obstacle Parameters

    Science.gov (United States)

    Loktev, Daniil; Loktev, Alexey; Stepanov, Roman; Pevzner, Viktor; Alenov, Kanat

    2018-03-01

    The method of combining algorithms of image blur analysis and stereo vision to determine the distance to objects (including external defects of railway tracks) and the speed of moving objects-obstacles is proposed. To estimate the deviation of the distance depending on the blur a statistical approach, logarithmic, exponential and linear standard functions are used. The statistical approach includes a method of estimating least squares and the method of least modules. The accuracy of determining the distance to the object, its speed and direction of movement is obtained. The paper develops a method of determining distances to objects by analyzing a series of images and assessment of depth using defocusing using its aggregation with stereoscopic vision. This method is based on a physical effect of dependence on the determined distance to the object on the obtained image from the focal length or aperture of the lens. In the calculation of the blur spot diameter it is assumed that blur occurs at the point equally in all directions. According to the proposed approach, it is possible to determine the distance to the studied object and its blur by analyzing a series of images obtained using the video detector with different settings. The article proposes and scientifically substantiates new and improved existing methods for detecting the parameters of static and moving objects of control, and also compares the results of the use of various methods and the results of experiments. It is shown that the aggregate method gives the best approximation to the real distances.

  13. Point defects and oxidation mechanism in cubic boron nitride

    International Nuclear Information System (INIS)

    Gorshin, A.P.; Shvajko-Shvajkovskij, V.E.

    1994-01-01

    A theoretical analysis of the defect formation in boron nitride by the Schottky mechanism within the framework of the quasi-chemical approximation method is carried out. On the base of solution of the disordering equations at different conditions of electroneutrality are obtained the dependences of defect concentrations in β-BN on the partial nitrogen pressure in equilibrium conditions. Experimental checking of the theoretical analysis proposed confirms the hypothesis on the presence of defects of nonstoichiometric origin in the β-BN anion sublattice

  14. Automatic inspection of surface defects in die castings after machining

    Directory of Open Access Journals (Sweden)

    S. J. Świłło

    2011-07-01

    Full Text Available A new camera based machine vision system for the automatic inspection of surface defects in aluminum die casting was developed by the authors. The problem of surface defects in aluminum die casting is widespread throughout the foundry industry and their detection is of paramount importance in maintaining product quality. The casting surfaces are the most highly loaded regions of materials and components. Mechanical and thermal loads as well as corrosion or irradiation attacks are directed primarily at the surface of the castings. Depending on part design and processing techniques, castings may develop surface discontinuities such as cracks or tears, inclusions due to chemical reactions or foreign material in the molten metal, and pores that greatly influence the material ability to withstand these loads. Surface defects may act as a stress concentrator initiating a fracture point. If a pressure is applied in this area, the casting can fracture. The human visual system is well adapted to perform in areas of variety and change; the visual inspection processes, on the other hand, require observing the same type of image repeatedly to detect anomalies. Slow, expensive, erratic inspection usually is the result. Computer based visual inspection provides a viable alternative to human inspectors. Developed by authors machine vision system uses an image processing algorithm based on modified Laplacian of Gaussian edge detection method to detect defects with different sizes and shapes. The defect inspection algorithm consists of three parameters. One is a parameter of defects sensitivity, the second parameter is a threshold level and the third parameter is to identify the detected defects size and shape. The machine vision system has been successfully tested for the different types of defects on the surface of castings.

  15. Point defects and diffusion in alloys: correlation effects

    International Nuclear Information System (INIS)

    Barbe, Vincent

    2006-01-01

    Kinetic models in alloys aim at predicting the transport properties of a system starting from the microscopic jump frequencies of defects. Such properties are of prior importance in systems which stay out of equilibrium for a long time, as for example irradiated alloys in nuclear reactors. We hereby propose several developments of the recent self-consistent mean field (SCMF) kinetic theory, which deals particularly with the correlation effects due to the coupling of atomic and defect fluxes. They are taken into account through a non-equilibrium distribution function of the system, which is derived from the time evolution of small clusters (of two or more atoms or defects). We therefore introduce a set of 'dynamic' interactions called effective Hamiltonian. The SCMF theory is extended to treat high jump frequency ratios for the vacancy mechanism, as well as the transport through interstitial defects. We use in both cases an atomic model which accounts for the thermodynamic properties of the alloy, as e.g. the short-range order. Those models are eventually applied to predict the diffusion properties in two model alloys of nuclear interest: the concentrated Fe-Ni-Cr solid solution and the dilute Fe(P) alloy. We present adapted atomic models and compare our predictions to experimental data. (author)

  16. Gauge-fixing parameter dependence of two-point gauge-variant correlation functions

    International Nuclear Information System (INIS)

    Zhai, C.

    1996-01-01

    The gauge-fixing parameter ξ dependence of two-point gauge-variant correlation functions is studied for QED and QCD. We show that, in three Euclidean dimensions, or for four-dimensional thermal gauge theories, the usual procedure of getting a general covariant gauge-fixing term by averaging over a class of covariant gauge-fixing conditions leads to a nontrivial gauge-fixing parameter dependence in gauge-variant two-point correlation functions (e.g., fermion propagators). This nontrivial gauge-fixing parameter dependence modifies the large-distance behavior of the two-point correlation functions by introducing additional exponentially decaying factors. These factors are the origin of the gauge dependence encountered in some perturbative evaluations of the damping rates and the static chromoelectric screening length in a general covariant gauge. To avoid this modification of the long-distance behavior introduced by performing the average over a class of covariant gauge-fixing conditions, one can either choose a vanishing gauge-fixing parameter or apply an unphysical infrared cutoff. copyright 1996 The American Physical Society

  17. Simulation of the accumulation kinetics for radiation point defects in a metals with impurity

    International Nuclear Information System (INIS)

    Iskakov, B.M.; Nurova, A.B.

    2001-01-01

    In the work a kinetics of vacancies (V) and interstitial atoms (IA) accumulation for cases when the V and IA are recombining with each other, absorbing by drain and capturing by impurity atoms has been simulated. The differential equations system numerical solution was carried out by the Runge-Kutta method. The dynamical equilibrium time achievement for the point radiation defects accumulation process in the metal with impurity is considered

  18. Gamma-rays and heat-treatment conversions of point defects in massive rose quartz from the Borborema Pegmatite Province, Northeast Brazil

    Science.gov (United States)

    Guzzo, Pedro L.; Barreto, Sandra B.; Miranda, Milena R.; Gonzaga, Raysa S. G.; Casals, Sandra A.

    2017-11-01

    An extensive characterization of trace elements and point defects in rose quartz from the Borborema Pegmatite Province (BPP) in the northeast of Brazil was carried out by complementary spectroscopic methods. The aim here was to document the change in the configuration of point defects into the quartz lattice induced by heat-treatment and ionizing radiation. The samples were extracted from the core of two granitic rare element (REL) pegmatites, Taboa (Carnaúba dos Dantas, RN) and Alto do Feio (Pedra Lavrada, PB). The contents of Al, P, Ti, Ni, Fe, Ge, Li, Be, B and K were measured by laser-ablation inductively coupled plasma mass spectrometry (LA-ICP-MS). Polished plates were heat-treated at 500 and 1000 °C and then irradiated with 50 kGy of γ rays. Point defects were characterized by optical (UV-Vis), infrared (IR), and electron paramagnetic resonance (EPR) spectroscopies. In the as-received condition, [AlO4/H]0 centers, Li- and B-dependent OH defects were observed. Point defects related to Al and Li species were significantly affected by heat-treatment at 1000 °C and/or γ radiation. Paramagnetic centers such as [AlO4]0, [GeO4/Li]0, [TiO4/Li]0 and [O2 3-/Li]0 were created by the diffusion of Li+ ions from their original diamagnetic centers related to substitutional Al3+ and OH-species. The smoky color developed after irradiation and the signal intensities of the paramagnetic centers were independent from the original rose color grade. The samples from the Taboa (TB) pegmatite showed the highest concentration of Al, Ti, Fe and Li elements as well as the highest signal intensities for [AlO4]0, [AlO4/H]0, [GeO4/Li]0 and [TiO4/Li]0 centers. Although TB also showed the higher concentration of B element, the intensity of the 3597 cm-1 IR band related to [BO4/H]0 centers was higher for Alto do Feio (AF) samples. This result suggests that the uptake of B into the quartz core of each pegmatite took place through different mechanisms. It was concluded that the change in

  19. Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Alfieri, G.; Sundaramoorthy, V. K.; Micheletto, R.

    2018-05-01

    Magnesium (Mg) is the p-type doping of choice for GaN, and selective area doping by ion implantation is a routine technique employed during device processing. While electrically active defects have been thoroughly studied in as-grown GaN, not much is known about defects generated by ion implantation. This is especially true for the case of Mg. In this study, we carried out an electrical characterization investigation of point defects generated by Mg implantation in GaN. We have found at least nine electrically active levels in the 0.2-1.2 eV energy range, below the conduction band. The isochronal annealing behavior of these levels showed that most of them are thermally stable up to 1000 °C. The nature of the detected defects is then discussed in the light of the results found in the literature.

  20. First-principles study of point defects in solar cell semiconductor CuI

    International Nuclear Information System (INIS)

    Chen, Hui; Wang, Chong-Yu; Wang, Jian-Tao; Wu, Ying; Zhou, Shao-Xiong

    2013-01-01

    Hybrid density functional theory is used to study the formation energies and transition levels of point defects V Cu , V I , I Cu , Cu I , and O I in CuI. It is shown that the Heyd–Scuseria–Ernzerhof (HSE06) method can accurately describe the band gap of bulk CuI. As a solar cell material, we find that p-type semiconductor CuI can be obtained under the iodine-rich and copper-poor conditions. Our results are in good agreement with experiment and provide an excellent account for tuning the structural and electronic properties of CuI

  1. First-principles study on oxidation effects in uranium oxides and high-pressure high-temperature behavior of point defects in uranium dioxide

    Science.gov (United States)

    Geng, Hua Y.; Song, Hong X.; Jin, K.; Xiang, S. K.; Wu, Q.

    2011-11-01

    Formation Gibbs free energy of point defects and oxygen clusters in uranium dioxide at high-pressure high-temperature conditions are calculated from first principles, using the LSDA+U approach for the electronic structure and the Debye model for the lattice vibrations. The phonon contribution on Frenkel pairs is found to be notable, whereas it is negligible for the Schottky defect. Hydrostatic compression changes the formation energies drastically, making defect concentrations depend more sensitively on pressure. Calculations show that, if no oxygen clusters are considered, uranium vacancy becomes predominant in overstoichiometric UO2 with the aid of the contribution from lattice vibrations, while compression favors oxygen defects and suppresses uranium vacancy greatly. At ambient pressure, however, the experimental observation of predominant oxygen defects in this regime can be reproduced only in a form of cuboctahedral clusters, underlining the importance of defect clustering in UO2+x. Making use of the point defect model, an equation of state for nonstoichiometric oxides is established, which is then applied to describe the shock Hugoniot of UO2+x. Furthermore, the oxidization and compression behavior of uranium monoxide, triuranium octoxide, uranium trioxide, and a series of defective UO2 at 0 K are investigated. The evolution of mechanical properties and electronic structures with an increase of the oxidation degree are analyzed, revealing the transition of the ground state of uranium oxides from metallic to Mott insulator and then to charge-transfer insulator due to the interplay of strongly correlated effects of 5f orbitals and the shift of electrons from uranium to oxygen atoms.

  2. Thermal equilibrium defects in anthracene probed by positron annihilation

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro; Tachibana, Masaru; Shimizu, Mikio; Satoh, Masaaki; Kojima, Kenichi; Ishibashi, Shoji; Kawano, Takao.

    1996-01-01

    Defects in anthracene were investigated by the positron annihilation technique. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured in the temperature range between 305 K and 516 K. The lifetime of positrons annihilated from the delocalized state was determined to be 0.306 ns around room temperature. Below the melting point, the observed temperature dependence of the line shape parameter S was explained assuming the formation energy of thermal equilibrium defects was 1 eV. Above the melting point, the pick-off annihilation of ortho-positronium in open spaces was observed, where the size of these spaces was estimated to be 0.2 nm 3 . The annihilation of positrons from the self-trapped state was also discussed. (author)

  3. Thermal equilibrium defects in anthracene probed by positron annihilation

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Tachibana, Masaru; Shimizu, Mikio; Satoh, Masaaki; Kojima, Kenichi; Ishibashi, Shoji; Kawano, Takao

    1996-06-01

    Defects in anthracene were investigated by the positron annihilation technique. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured in the temperature range between 305 K and 516 K. The lifetime of positrons annihilated from the delocalized state was determined to be 0.306 ns around room temperature. Below the melting point, the observed temperature dependence of the line shape parameter S was explained assuming the formation energy of thermal equilibrium defects was 1 eV. Above the melting point, the pick-off annihilation of ortho-positronium in open spaces was observed, where the size of these spaces was estimated to be 0.2 nm{sup 3}. The annihilation of positrons from the self-trapped state was also discussed. (author)

  4. First principles calculation of point defects and mobility degradation in bulk AlSb for radiation detection application

    International Nuclear Information System (INIS)

    Lordi, V; Aberg, D; Erhart, P; Wu, K J

    2007-01-01

    The development of high resolution, room temperature semiconductor radiation detectors requires the introduction of materials with increased carrier mobility-lifetime (μτ) product, while having a band gap in the 1.4-2.2 eV range. AlSb is a promising material for this application. However, systematic improvements in the material quality are necessary to achieve an adequate μτ product. We are using a combination of simulation and experiment to develop a fundamental understanding of the factors which affect detector material quality. First principles calculations are used to study the microscopic mechanisms of mobility degradation from point defects and to calculate the intrinsic limit of mobility from phonon scattering. We use density functional theory (DFT) to calculate the formation energies of native and impurity point defects, to determine their equilibrium concentrations as a function of temperature and charge state. Perturbation theory via the Born approximation is coupled with Boltzmann transport theory to calculate the contribution toward mobility degradation of each type of point defect, using DFT-computed carrier scattering rates. A comparison is made to measured carrier concentrations and mobilities from AlSb crystals grown in our lab. We find our predictions in good quantitative agreement with experiment, allowing optimized annealing conditions to be deduced. A major result is the determination of oxygen impurity as a severe mobility killer, despite the ability of oxygen to compensation dope AlSb and reduce the net carrier concentration. In this case, increased resistivity is not a good indicator of improved material performance, due to the concomitant sharp reduction in μτ

  5. Calibrating a multi-model approach to defect production in high energy collision cascades

    International Nuclear Information System (INIS)

    Heinisch, H.L.; Singh, B.N.; Diaz de la Rubia, T.

    1994-01-01

    A multi-model approach to simulating defect production processes at the atomic scale is described that incorporates molecular dynamics (MD), binary collision approximation (BCA) calculations and stochastic annealing simulations. The central hypothesis is that the simple, fast computer codes capable of simulating large numbers of high energy cascades (e.g., BCA codes) can be made to yield the correct defect configurations when their parameters are calibrated using the results of the more physically realistic MD simulations. The calibration procedure is investigated using results of MD simulations of 25 keV cascades in copper. The configurations of point defects are extracted from the MD cascade simulations at the end of the collisional phase, thus providing information similar to that obtained with a binary collision model. The MD collisional phase defect configurations are used as input to the ALSOME annealing simulation code, and values of the ALSOME quenching parameters are determined that yield the best fit to the post-quenching defect configurations of the MD simulations. ((orig.))

  6. Influence of tool geometry and processing parameters on welding defects and mechanical properties for friction stir welding of 6061 Aluminium alloy

    Science.gov (United States)

    Daneji, A.; Ali, M.; Pervaiz, S.

    2018-04-01

    Friction stir welding (FSW) is a form of solid state welding process for joining metals, alloys, and selective composites. Over the years, FSW development has provided an improved way of producing welding joints, and consequently got accepted in numerous industries such as aerospace, automotive, rail and marine etc. In FSW, the base metal properties control the material’s plastic flow under the influence of a rotating tool whereas, the process and tool parameters play a vital role in the quality of weld. In the current investigation, an array of square butt joints of 6061 Aluminum alloy was to be welded under varying FSW process and tool geometry related parameters, after which the resulting weld was evaluated for the corresponding mechanical properties and welding defects. The study incorporates FSW process and tool parameters such as welding speed, pin height and pin thread pitch as input parameters. However, the weld quality related defects and mechanical properties were treated as output parameters. The experimentation paves way to investigate the correlation between the inputs and the outputs. The correlation between inputs and outputs were used as tool to predict the optimized FSW process and tool parameters for a desired weld output of the base metals under investigation. The study also provides reflection on the effect of said parameters on a welding defect such as wormhole.

  7. Optical transitions in two-dimensional topological insulators with point defects

    Science.gov (United States)

    Sablikov, Vladimir A.; Sukhanov, Aleksei A.

    2016-12-01

    Nontrivial properties of electronic states in topological insulators are inherent not only to the surface and boundary states, but to bound states localized at structure defects as well. We clarify how the unusual properties of the defect-induced bound states are manifested in optical absorption spectra in two-dimensional topological insulators. The calculations are carried out for defects with short-range potential. We find that the defects give rise to the appearance of specific features in the absorption spectrum, which are an inherent property of topological insulators. They have the form of two or three absorption peaks that are due to intracenter transitions between electron-like and hole-like bound states.

  8. Formation of topological defects

    International Nuclear Information System (INIS)

    Vachaspati, T.

    1991-01-01

    We consider the formation of point and line topological defects (monopoles and strings) from a general point of view by allowing the probability of formation of a defect to vary. To investigate the statistical properties of the defects at formation we give qualitative arguments that are independent of any particular model in which such defects occur. These arguments are substantiated by numerical results in the case of strings and for monopoles in two dimensions. We find that the network of strings at formation undergoes a transition at a certain critical density below which there are no infinite strings and the closed-string (loop) distribution is exponentially suppressed at large lengths. The results are contrasted with the results of statistical arguments applied to a box of strings in dynamical equilibrium. We argue that if point defects were to form with smaller probability, the distance between monopoles and antimonopoles would decrease while the monopole-to-monopole distance would increase. We find that monopoles are always paired with antimonopoles but the pairing becomes clean only when the number density of defects is small. A similar reasoning would also apply to other defects

  9. Point defects and irradiation in oxides: simulations at the atomic scale; Defauts ponctuels et irradiation dans les oxydes: simulation a l'echelle atomique

    Energy Technology Data Exchange (ETDEWEB)

    Crocombette, J.P

    2005-12-15

    The studies done by Jean-Paul Crocombette between 1996 and 2005 in the Service de Recherches de Metallurgie Physique of the Direction de l'Energie Nucleaire in Saclay are presented in this Habilitation thesis. These works were part of the material science researches on the ageing, especially under irradiation, of oxides of interest for the nuclear industry. In this context simulation studies at the atomic scale were performed on two elementary components of ageing under irradiation : point defects and displacement cascades ; using two complementary simulation techniques : ab initio electronic structure calculations and empirical potential molecular dynamics. The first part deals with point defects : self defects (vacancies or interstitials) or hetero-atomic dopants. One first recalls the energetics of such defects in oxides, the specific features of defects calculations and the expected accuracy of these calculations. Then one presents the results obtained on uranium dioxide, oxygen in silver and amorphous silica. The second part tackles the modelling of disintegration recoil nuclei in various?displacement cascades created by crystalline matrices for actinide waste disposal. Cascade calculations give access to the amorphization mechanisms under irradiation of these materials. One thus predicts that the amorphization in zircon takes place directly in the tracks whereas in lanthanum zirconate, the amorphization proceeds through the accumulation of point defects. Finally the prospects of these studies are discussed. (author)

  10. DIAGNOSIS OF DAMAGES OF PLANE WINGS ATTACHMENT POINTS USING VIBRATION’S PARAMETERS

    Directory of Open Access Journals (Sweden)

    A. V. Kositsyn

    2013-01-01

    Full Text Available A method of diagnostics of power structures based on shock excitation of eiqenmodes and used as a diagnostic parameter of modal characteristics (natural frequencies and mode shapes is proposed. Using an airplane wing of MiG-29 a method of diagnosting the defectiveness of the attachment based on the analysis of feedback signals of shock effects. A numerical and full-scale experiments to evaluate the effectiveness of the proposed options are presented.

  11. Atomistic simulation of the point defects in B2-type MoTa alloy

    International Nuclear Information System (INIS)

    Zhang Jianmin; Wang Fang; Xu Kewei; Ji, Vincent

    2009-01-01

    The formation and migration mechanisms of three different point defects (mono-vacancy, anti-site defect and interstitial atom) in B 2 -type MoTa alloy have been investigated by combining molecular dynamics (MD) simulation with modified analytic embedded-atom method (MAEAM). From minimization of the formation energy, we find that the anti-site defects Mo Ta and Ta Mo are easier to form than Mo and Ta mono-vacancies, while Mo and Ta interstitial atoms are difficult to form in the alloy. In six migration mechanisms of Mo and Ta mono-vacancies, one nearest-neighbor jump (1NNJ) is the most favorable due to its lowest activation and migration energies, but it will cause a disorder in the alloy. One next-nearest-neighbor jump (1NNNJ) and one third-nearest-neighbor jump (1TNNJ) can maintain the ordered property of the alloy but require higher activation and migration energies, so the 1NNNJ and 1TNNJ should be replaced by straight [1 0 0] six nearest-neighbor cyclic jumps (S[1 0 0]6NNCJ) or bent [1 0 0] six nearest-neighbor cyclic jumps (B[1 0 0]6NNCJ) and [1 1 0] six nearest-neighbor cyclic jumps ([1 1 0]6NNCJ), respectively. Although the migrations of Mo and Ta interstitial atoms need much lower energy than Mo and Ta mono-vacancies, they are not main migration mechanisms due to difficult to form in the alloy.

  12. Effects of extrinsic point defects in phosphorene: B, C, N, O and F Adatoms

    OpenAIRE

    Wang, Gaoxue; Pandey, Ravindra; Karna, Shashi P.

    2015-01-01

    Phosphorene is emerging as a promising 2D semiconducting material with a direct band gap and high carrier mobility. In this paper, we examine the role of the extrinsic point defects including surface adatoms in modifying the electronic properties of phosphorene using density functional theory. The surface adatoms considered are B, C, N, O and F with a [He] core electronic configuration. Our calculations show that B and C, with electronegativity close to P, prefer to break the sp3 bonds of pho...

  13. Contribution to the study of point defects in uranium α

    International Nuclear Information System (INIS)

    Jousset, J.

    1968-01-01

    Uranium quenched from temperatures as low as 100 K shows an important increase in resistivity which disappears after annealing between 4.2 K and 41 K. This phenomenon is explained by a cold-work of the metal due to the rapid traversing of the temperature region where the lattice parameters exhibit an important and anisotropic increase. The annealing occurs in two stages (4.2 K - 26 K - 41 K). Purity of samples has an influence on the phenomenon. Model proposed is confirmed by the comparison with some experiments of annealing of defects created by irradiation of uranium at very low temperatures. Vacancies have been quenched in the metal from temperatures around 650 C (limit of the α phase). The formation energy so found is E F = 0. 5 ± 0.15 eV. The annealing out of the induced resistivity happens in two stages (300-390; 420-560 C). (authors) [fr

  14. Electronic structures of β-SiC containing point defects studied by DX-Xα method

    International Nuclear Information System (INIS)

    Sawabe, Takashi; Yano, Toyohiko

    2008-01-01

    The DV-Xα method was used to calculate the bond order between atoms in cubic silicon carbide (β-SiC) with a point defect. Three types of β-SiC cluster models were used: pure cluster, vacancy cluster and interstitial cluster. The bond order was influenced by the kind to defects. The bonds between C interstitial and neighboring C atoms were composed of anti-bonding type interactions, while the bonds between Si interstitial and neighboring C and Si atoms were composed of bonding type interactions. The overlap population of each molecular orbital was examined to obtain detailed information of the chemical bonding. It appeared more difficult to recombine interstitial atoms in a cluster with a C atom vacancy than in a cluster with a Si atom vacancy, due to the stronger Si-Si bonds surrounding the C atom vacancy. The C interstitial atom had C2s and C2p anti-bonding interactions with high energy levels. The Si interstitial had minimal anti-bonding interactions. (author)

  15. Optimization of pulsed laser welding process parameters in order to attain minimum underfill and undercut defects in thin 316L stainless steel foils

    Science.gov (United States)

    Pakmanesh, M. R.; Shamanian, M.

    2018-02-01

    In this study, the optimization of pulsed Nd:YAG laser welding parameters was done on the lap-joint of a 316L stainless steel foil with the aim of reducing weld defects through response surface methodology. For this purpose, the effects of peak power, pulse-duration, and frequency were investigated. The most important weld defects seen in this method include underfill and undercut. By presenting a second-order polynomial, the above-mentioned statistical method was managed to be well employed to balance the welding parameters. The results showed that underfill increased with the increased power and reduced frequency, it first increased and then decreased with the increased pulse-duration; and the most important parameter affecting it was the power, whose effect was 65%. The undercut increased with the increased power, pulse-duration, and frequency; and the most important parameter affecting it was the power, whose effect was 64%. Finally, by superimposing different responses, improved conditions were presented to attain a weld with no defects.

  16. Transforming graphene nanoribbons into nanotubes by use of point defects.

    Science.gov (United States)

    Sgouros, A; Sigalas, M M; Papagelis, K; Kalosakas, G

    2014-03-26

    Using molecular dynamics simulations with semi-empirical potentials, we demonstrate a method to fabricate carbon nanotubes (CNTs) from graphene nanoribbons (GNRs), by periodically inserting appropriate structural defects into the GNR crystal structure. We have found that various defect types initiate the bending of GNRs and eventually lead to the formation of CNTs. All kinds of carbon nanotubes (armchair, zigzag, chiral) can be produced with this method. The structural characteristics of the resulting CNTs, and the dependence on the different type and distribution of the defects, were examined. The smallest (largest) CNT obtained had a diameter of ∼ 5 Å (∼ 39 Å). Proper manipulation of ribbon edges controls the chirality of the CNTs formed. Finally, the effect of randomly distributed defects on the ability of GNRs to transform into CNTs is considered.

  17. Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells

    International Nuclear Information System (INIS)

    Gorge, V.; Migan-Dubois, A.; Djebbour, Z.; Pantzas, K.; Gautier, S.; Moudakir, T.; Suresh, S.; Ougazzaden, A.

    2013-01-01

    Highlights: ► We have modeled a p–i–n InGaN-based solar cell with gradual bandgap layers. ► InGaN defects have been modeled by two band tails and one localized energy level. ► Energetic position and band tail widths have a low effect on device efficiency. ► The localized defect FWHM has a significant impact on performance. ► The efficiency drops radically when the defect density is higher than the P-doping. - Abstract: In this paper, we have used simulations to evaluate the impact of the distribution of electrically active defects on the photovoltaic performances of InGaN-based solar cell. The simulations were carried out using Silvaco's ATLAS software. We have modeled a P-GaN/Grad-InGaN/i-In 0.53 Ga 0.47 N/Grad-InGaN/N-ZnO where Grad-InGaN corresponds to an InGaN layer with a graded composition. This layer is inserted to eliminate the band discontinuities at the interface between InGaN and the GaN and ZnO layers. The defects were modeled through the introduction of band tails and a Gaussian distribution of defects in i-InGaN material. We have evaluated the influence of band tail widths as well as the parameters of the Gaussian distribution (i.e. defect density, mean position and standard deviation) on the short-circuit current, the open-circuit voltage and the fill-factor (efficiency) of the solar cell. These results have allowed us to identify key structural parameters useful for the optimization of InGaN solar cells, as well as to give realistic estimates of the performances of such cells.

  18. Modified mean generation time parameter in the neutron point kinetics equations

    Energy Technology Data Exchange (ETDEWEB)

    Diniz, Rodrigo C.; Gonçalves, Alessandro C.; Rosa, Felipe S.S., E-mail: alessandro@nuclear.ufrj.br, E-mail: frosa@if.ufrj.br [Coordenacao de Pos-Graduacao e Pesquisa de Engenharia (PEN/COPPE/UFRJ), Rio de Janeiro, RJ (Brazil)

    2017-07-01

    This paper proposes an approximation for the modified point kinetics equations proposed by NUNES et. al, 2015, through the adjustment of a kinetic parameter. This approximation consists of analyzing the terms of the modified point kinetics equations in order to identify the least important ones for the solution, resulting in a modification of the mean generation time parameter that incorporates all influences of the additional terms of the modified kinetics. This approximation is applied on the inverse kinetics, to compare the results with the inverse kinetics from the modified kinetics in order to validate the proposed model. (author)

  19. Modified mean generation time parameter in the neutron point kinetics equations

    International Nuclear Information System (INIS)

    Diniz, Rodrigo C.; Gonçalves, Alessandro C.; Rosa, Felipe S.S.

    2017-01-01

    This paper proposes an approximation for the modified point kinetics equations proposed by NUNES et. al, 2015, through the adjustment of a kinetic parameter. This approximation consists of analyzing the terms of the modified point kinetics equations in order to identify the least important ones for the solution, resulting in a modification of the mean generation time parameter that incorporates all influences of the additional terms of the modified kinetics. This approximation is applied on the inverse kinetics, to compare the results with the inverse kinetics from the modified kinetics in order to validate the proposed model. (author)

  20. Trapping of point defects and segregation at the free surfaces of a metal sheet under irradiation

    International Nuclear Information System (INIS)

    Sarce, Alicia

    2003-01-01

    The migration of irradiation produced vacancies and interstitials to the free surfaces of a sheet of thickness d (pure metal and binary alloys AB of hcp structure) is calculated. For alloys, the irradiation temperature when no segregation exists (critical temperature) is obtained. The anisotropy of the diffusion of point defects in the hcp lattice is explicitly included in the calculations. (author)

  1. Experimental and ab initio study of the hyperfine parameters of ZnFe {sub 2}O{sub 4} with defects

    Energy Technology Data Exchange (ETDEWEB)

    Quintero, J. Melo; Salcedo Rodríguez, K. L.; Pasquevich, G. A.; Zélis, P. Mendoza; Stewart, S. J., E-mail: stewart@fisica.unlp.edu.ar; Rodríguez Torres, C. E.; Errico, L. A. [Universidad Nacional de La Plata, IFLP-CCT- La Plata-CONICET and Departamento de Física, Facultad de Ciencias Exactas, C. C. 67 (Argentina)

    2016-12-15

    We present a combined Mössbauer and ab initio study on the influence of oxygen-vacancies on the hyperfine and magnetic properties of the ZnFe {sub 2}O{sub 4} spinel ferrite. Samples with different degree of oxygen-vacancies were obtained from zinc ferrite powder that was thermally treated at different temperatures up to 650 {sup ∘}C under vacuum.Theoretical calculations of the hyperfine parameters, magnetic moments and magnetic alignment have been carried out considering different defects such as oxygen vacancies and cation inversion. We show how theoretical and experimental approaches are complementary to characterize the local structure around Fe atoms and interpret the observed changes in the hyperfine parameters as the level of defects increases.

  2. Analysis of probability of defects in the disposal canisters

    International Nuclear Information System (INIS)

    Holmberg, J.-E.; Kuusela, P.

    2011-06-01

    This report presents a probability model for the reliability of the spent nuclear waste final disposal canister. Reliability means here that the welding of the canister lid has no critical defects from the long-term safety point of view. From the reliability point of view, both the reliability of the welding process (that no critical defects will be born) and the non-destructive testing (NDT) process (all critical defects will be detected) are equally important. In the probability model, critical defects in a weld were simplified into a few types. Also the possibility of human errors in the NDT process was taken into account in a simple manner. At this moment there is very little representative data to determine the reliability of welding and also the data on NDT is not well suited for the needs of this study. Therefore calculations presented here are based on expert judgements and on several assumptions that have not been verified yet. The Bayesian probability model shows the importance of the uncertainty in the estimation of the reliability parameters. The effect of uncertainty is that the probability distribution of the number of defective canisters becomes flat for larger numbers of canisters compared to the binomial probability distribution in case of known parameter values. In order to reduce the uncertainty, more information is needed from both the reliability of the welding and NDT processes. It would also be important to analyse the role of human factors in these processes since their role is not reflected in typical test data which is used to estimate 'normal process variation'.The reported model should be seen as a tool to quantify the roles of different methods and procedures in the weld inspection process. (orig.)

  3. Transformation of point defects under annealing of neutron-irradiated Si and Si:Ge

    International Nuclear Information System (INIS)

    Pomozov, Yu.V.; Khirunenko, L.I.; Shakhovtsev, V.I.; Yashnik, V.I.

    1990-01-01

    Transformation of point radiation defects under isochronous annealing of neurton-irradaited Si and Si:Ge is studied. It is determined, that occurence of several new centers which produce A-centre range absorption bands is observed at annealing within 423-493 K temperature range. It is shown that vacancy and oxygen are included in the centers composition. It is found that VO centre transformation into VO 2 at annealing occurs via intermediate stage in contrast to that occuring in electron-irradiated crystals via VO direct diffusion to interstitial oxygen. Transformation of centers under Si ansd Si:Ge annealing occurs similarly

  4. Combining the 3D model generated from point clouds and thermography to identify the defects presented on the facades of a building

    Science.gov (United States)

    Huang, Yishuo; Chiang, Chih-Hung; Hsu, Keng-Tsang

    2018-03-01

    Defects presented on the facades of a building do have profound impacts on extending the life cycle of the building. How to identify the defects is a crucial issue; destructive and non-destructive methods are usually employed to identify the defects presented on a building. Destructive methods always cause the permanent damages for the examined objects; on the other hand, non-destructive testing (NDT) methods have been widely applied to detect those defects presented on exterior layers of a building. However, NDT methods cannot provide efficient and reliable information for identifying the defects because of the huge examination areas. Infrared thermography is often applied to quantitative energy performance measurements for building envelopes. Defects on the exterior layer of buildings may be caused by several factors: ventilation losses, conduction losses, thermal bridging, defective services, moisture condensation, moisture ingress, and structure defects. Analyzing the collected thermal images can be quite difficult when the spatial variations of surface temperature are small. In this paper the authors employ image segmentation to cluster those pixels with similar surface temperatures such that the processed thermal images can be composed of limited groups. The surface temperature distribution in each segmented group is homogenous. In doing so, the regional boundaries of the segmented regions can be identified and extracted. A terrestrial laser scanner (TLS) is widely used to collect the point clouds of a building, and those point clouds are applied to reconstruct the 3D model of the building. A mapping model is constructed such that the segmented thermal images can be projected onto the 2D image of the specified 3D building. In this paper, the administrative building in Chaoyang University campus is used as an example. The experimental results not only provide the defect information but also offer their corresponding spatial locations in the 3D model.

  5. Defect formation energies and homogeneity ranges of rock salt-, pyrite-, chalcopyrite- and molybdenite-type compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Fiechter, S. [Hahn-Meitner-Institut, Glienicker Strasse 100, Berlin D-14109 (Germany)

    2004-07-01

    Employing the generalisation of Van Vechten's cavity model, formation energies of neutral point defects in pyrites (FeS{sub 2}, RuS{sub 2}), chalcopyrites (II-IV-V{sub 2} and I-III-VI{sub 2}) as well as molybdenites (MoS{sub 2}, WS{sub 2}) have been estimated. As input parameters the fundamental band gaps, work functions, electron affinities, surface energies, coordination numbers, covalent or ionic radii and unit cell parameters were used. The values calculated for tetrahedrally and octahedrally coordinated compounds agreed well with measured values. The data obtained can be used to calculate point defect concentrations and homogeneity ranges as a function of partial pressure and temperature. Introducing charged vacancies, the conductivity type can be predicted.

  6. Influence of phosphorus on point defects in an austenitic alloy

    International Nuclear Information System (INIS)

    Boulanger, L.

    1988-06-01

    The influence of phosphorus on points defects clusters has been studied in an austenitic alloy (Fe/19% at. Cr/13% at. Ni). Clusters are observed by transmission electron microscopy. After quenching and annealing, five types of clusters produced by vacancies or phosphorus-vacancies complexes are observed whose presence depends on cooling-speed. Vacancy concentration (with 3.6 10 -3 at. P) in clusters is about 10 -5 and apparent vacancy migration is 2 ± 0.1 eV. These observations suggest the formation of metastable small clusters during cooling which dissociate during annealing and migrate to create the observed clusters. With phosphorus, the unfrequent formation of vacancy loops has been observed during electron irradiation. Ions irradiations show that phosphorus does not favour nucleation of interstitial loops but slowers their growth. It reduces swelling by decreasing voids diameter. Phosphorus forms vacancy complexes whose role is to increase the recombination rate and to slow vacancy migration [fr

  7. Defect-impurity interactions in ion-implanted metals

    International Nuclear Information System (INIS)

    Turos, A.

    1986-01-01

    An overview of defect-impurity interactions in metals is presented. When point defects become mobile they migrate towards the sinks and on the way can be captured by impurity atoms forming stable associations so-called complexes. In some metallic systems complexes can also be formed athermally during ion implantation by trapping point defects already in the collision cascade. An association of a point defect with an impurity atom leads to its displacement from the lattice site. The structure and stability of complexes are strongly temperature dependent. With increasing temperature they dissociate or grow by multiple defect trapping. The appearance of freely migrating point defects at elevated temperatures, due to ion bombardment or thermal annealing, causes via coupling with defect fluxes, important impurity redistribution. Because of the sensitivity of many metal-in-metal implanted systems to radiation damage the understanding of this processes is essential for a proper interpretation of the lattice occupancy measurements and the optimization of implantation conditions. (author)

  8. Characterization of point defects in CdTe by positron annihilation spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Elsharkawy, M. R. M. [Carnegie Laboratory of Physics, SUPA, School of Science and Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Physics Department, Faculty of Science, Minia University, P.O. Box 61519, Minia (Egypt); Kanda, G. S.; Keeble, D. J., E-mail: d.j.keeble@dundee.ac.uk [Carnegie Laboratory of Physics, SUPA, School of Science and Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Abdel-Hady, E. E. [Physics Department, Faculty of Science, Minia University, P.O. Box 61519, Minia (Egypt)

    2016-06-13

    Positron lifetime measurements on CdTe 0.15% Zn-doped by weight are presented, trapping to monovacancy defects is observed. At low temperatures, localization at shallow binding energy positron traps dominates. To aid defect identification density functional theory, calculated positron lifetimes and momentum distributions are obtained using relaxed geometry configurations of the monovacancy defects and the Te antisite. These calculations provide evidence that combined positron lifetime and coincidence Doppler spectroscopy measurements have the capability to identify neutral or negative charge states of the monovacancies, the Te antisite, A-centers, and divacancy defects in CdTe.

  9. Combined analysis of the S and W parameters obtained from positron annihilation spectra

    International Nuclear Information System (INIS)

    Fedorov, A.V.; Veen, A. van; Schut, H.

    2001-01-01

    Variable energy positron beam analysis (PBA) has proven to be a very useful and powerful technique for the study of nanosize layer structures and point defects in various materials. Analysis of the positron annihilation spectra is usually performed with the help of the S and W parameters. By mapping the experimental points in the S-W plane the cluster points characteristic for the layers or defects can be derived. We have developed the program SWAN (S-W analysis) to enable to trace these cluster points and to calculate the fractions of the positrons annihilated at the layers or defects ascribed to the cluster points. In combination with the known computer code VEPFIT, program SWAN was successfully used for analyzing the S and W- curves for a number of samples. As an example, the analysis of SIMOX sample measured by PBA is presented. The program runs on a PC, has a user-friendly interface and is available for distribution. (orig.)

  10. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  11. Intrinsic point defects in zinc oxide. Modeling of structural, electronic, thermodynamic and kinetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Erhart, P.

    2006-07-01

    The present dissertation deals with the modeling of zinc oxide on the atomic scale employing both quantum mechanical as well as atomistic methods. The first part describes quantum mechanical calculations based on density functional theory of intrinsic point defects in ZnO. To begin with, the geometric and electronic structure of vacancies and oxygen interstitials is explored. In equilibrium oxygen interstitials are found to adopt dumbbell and split interstitial configurations in positive and negative charge states, respectively. Semi-empirical self-interaction corrections allow to improve the agreement between the experimental and the calculated band structure significantly; errors due to the limited size of the supercells can be corrected by employing finite-size scaling. The effect of both band structure corrections and finite-size scaling on defect formation enthalpies and transition levels is explored. Finally, transition paths and barriers for the migration of zinc as well as oxygen vacancies and interstitials are determined. The results allow to interpret diffusion experiments and provide a consistent basis for developing models for device simulation. In the second part an interatomic potential for zinc oxide is derived. To this end, the Pontifix computer code is developed which allows to fit analytic bond-order potentials. The code is subsequently employed to obtain interatomic potentials for Zn-O, Zn-Zn, and O-O interactions. To demonstrate the applicability of the potentials, simulations on defect production by ion irradiation are carried out. (orig.)

  12. Point defect stability in a semicoherent metallic interface

    Science.gov (United States)

    González, C.; Iglesias, R.; Demkowicz, M. J.

    2015-02-01

    We present a comprehensive density functional theory (DFT) -based study of different aspects of one vacancy and He impurity atom behavior at semicoherent interfaces between the low-solubility transition metals Cu and Nb. Such interfaces have not been previously modeled using DFT. A thorough analysis of the stability and mobility of the two types of defects at the interfaces and neighboring internal layers has been performed and the results have been compared to the equivalent cases in the pure metallic matrices. The different behavior of fcc and bcc metals on both sides of the interface has been specifically assessed. The modeling effort undertaken is the first attempt to study the stability and defect energetics of noncoherent Cu/Nb interfaces from first principles, in order to assess their potential use in radiation-resistant materials.

  13. Band Structure Characteristics of Nacreous Composite Materials with Various Defects

    Science.gov (United States)

    Yin, J.; Zhang, S.; Zhang, H. W.; Chen, B. S.

    2016-06-01

    Nacreous composite materials have excellent mechanical properties, such as high strength, high toughness, and wide phononic band gap. In order to research band structure characteristics of nacreous composite materials with various defects, supercell models with the Brick-and-Mortar microstructure are considered. An efficient multi-level substructure algorithm is employed to discuss the band structure. Furthermore, two common systems with point and line defects and varied material parameters are discussed. In addition, band structures concerning straight and deflected crack defects are calculated by changing the shear modulus of the mortar. Finally, the sensitivity of band structures to the random material distribution is presented by considering different volume ratios of the brick. The results reveal that the first band gap of a nacreous composite material is insensitive to defects under certain conditions. It will be of great value to the design and synthesis of new nacreous composite materials for better dynamic properties.

  14. Defects level evaluation of LiTiZn ferrite ceramics using temperature dependence of initial permeability

    Science.gov (United States)

    Malyshev, A. V.; Petrova, A. B.; Sokolovskiy, A. N.; Surzhikov, A. P.

    2018-06-01

    The method for evaluating the integral defects level and chemical homogeneity of ferrite ceramics based on temperature dependence analysis of initial permeability is suggested. A phenomenological expression for the description of such dependence was suggested and an interpretation of its main parameters was given. It was shown, that the main criterion of the integral defects level of ferrite ceramics is relation of two parameters correlating with elastic stress value in a material. An indicator of structural perfection can be a maximum value of initial permeability close to Curie point as well. The temperature dependences of initial permeability have analyzed for samples sintered in laboratory conditions and for the ferrite industrial product. The proposed method allows controlling integral defects level of the soft ferrite products and has high sensitivity compare to typical X-ray methods.

  15. The theory of dissipative structures of the kinetic system for defects of nonlinear physical system 'metal+loading+irradiation'. Part 3

    International Nuclear Information System (INIS)

    Tarasov, V.A.; Borikov, T.L.; Kryzhanovskaya, T.V.; Chernezhenko, S.A.; Rusov, V.D.

    2007-01-01

    The kinetic system for defects of physical nonlinear system 'metal + load + irradiation' is specified [1, 2, 3]. Developing the approaches offered in [4], where distinctions of mechanisms of radiating creep and areas of their applicability are formalized (depending on external parameters) for fuel and constructional metals, division of kinetic systems for defects of constructional and fuel metals is carrying out. Thus the accent on the autocatalytic features of kinetic system for defects of reactor fuel metals, resulting from the exoenergic autocatalytic character of nuclear fission reactions being the main point defect source is done. In this part of the article the basic attention is given to the kinetic of sink drains for point defects. For kinetic systems of sinks-sources new approaches for the task of boundary conditions are offered. The possible structure of the computer program modelling kinetic system for defects of nonlinear physical system 'metal + load + irradiation' is considered

  16. First-Principles Investigations of Defects in Minerals

    Science.gov (United States)

    Verma, Ashok K.

    2011-07-01

    The ideal crystal has an infinite 3-dimensional repetition of identical units which may be atoms or molecules. But real crystals are limited in size and they have disorder in stacking which as called defects. Basically three types of defects exist in solids: 1) point defects, 2) line defects, and 3) surface defects. Common point defects are vacant lattice sites, interstitial atoms and impurities and these are known to influence strongly many solid-state transport properties such as diffusion, electrical conduction, creep, etc. In thermal equilibrium point defects concentrations are determined by their formation enthalpies and their movement by their migration barriers. Line and surface defects are though absent from the ideal crystal in thermal equilibrium due to higher energy costs but they are invariably present in all real crystals. Line defects include edge-, screw- and mixed-dislocations and their presence is essential in explaining the mechanical strength and deformation of real crystals. Surface defects may arise at the boundary between two grains, or small crystals, within a larger crystal. A wide variety of grain boundaries can form in a polycrystal depending on factors such growth conditions and thermal treatment. In this talk we will present our first-principles density functional theory based defect studies of SiO2 polymorphs (stishovite, CaCl2-, α-PbO2-, and pyrite-type), Mg2SiO4 polymorphs (forsterite, wadsleyite and ringwoodite) and MgO [1-3]. Briefly, several native point defects including vacancies, interstitials, and their complexes were studied in silica polymorphs upto 200 GPa. Their values increase by a factor of 2 over the entire pressure range studied with large differences in some cases between different phases. The Schottky defects are energetically most favorable at zero pressure whereas O-Frenkel pairs become systematically more favorable at pressures higher than 20 GPa. The geometric and electronic structures of defects and migrating

  17. Congenital Heart Defects and CCHD

    Science.gov (United States)

    ... and more. Stony Point, NY 10980 Close X Home > Complications & Loss > Birth defects & other health conditions > Congenital heart defects and ... in congenital heart defects. You have a family history of congenital heart ... syndrome or VCF. After birth Your baby may be tested for CCHD as ...

  18. Structural integrity evaluation of SG tube with surface wear-type defects

    International Nuclear Information System (INIS)

    Kim, Jong Min; Huh, Nam Su; Chang, Yoon Suk; Kim, Young Jin; Hwang, Seong Sik; Kim, Joung Soo

    2006-01-01

    During the last two decades, several guidelines have been developed and used for assessing the integrity of a defective Steam Generator (SG) tube that is generally caused by stress corrosion cracking or wall-thinning phenomenon. However, as some of SG tubes are also failed due to fretting and so on, alternative failure estimation schemes are required for relevant defects. In this paper, parametric three-dimensional Finite Element (FE) analyses are carried out under internal pressure condition to simulate the failure behavior of SG tubes with different defect configurations; elliptical wear, tapered and flat wear type defects. Maximum pressures based on material strengths are obtained from more than a hundred FE results to predict the failure of SG tube. After investigating the effect of key parameters such as defect depth, defect length and wrap angle, simplified failure estimation equations are proposed in relation to the equivalent stress at the deepest point in wear region. Comparison of failure pressures predicted by the proposed estimation scheme with corresponding burst test data showed a good agreement

  19. Point defect characterization in HAADF-STEM images using multivariate statistical analysis

    International Nuclear Information System (INIS)

    Sarahan, Michael C.; Chi, Miaofang; Masiel, Daniel J.; Browning, Nigel D.

    2011-01-01

    Quantitative analysis of point defects is demonstrated through the use of multivariate statistical analysis. This analysis consists of principal component analysis for dimensional estimation and reduction, followed by independent component analysis to obtain physically meaningful, statistically independent factor images. Results from these analyses are presented in the form of factor images and scores. Factor images show characteristic intensity variations corresponding to physical structure changes, while scores relate how much those variations are present in the original data. The application of this technique is demonstrated on a set of experimental images of dislocation cores along a low-angle tilt grain boundary in strontium titanate. A relationship between chemical composition and lattice strain is highlighted in the analysis results, with picometer-scale shifts in several columns measurable from compositional changes in a separate column. -- Research Highlights: → Multivariate analysis of HAADF-STEM images. → Distinct structural variations among SrTiO 3 dislocation cores. → Picometer atomic column shifts correlated with atomic column population changes.

  20. Partitioning of water between point defects, dislocations, and grain boundaries in olivine

    Science.gov (United States)

    Tielke, J. A.; Mecklenburgh, J.; Mariani, E.; Wheeler, J.

    2017-12-01

    Estimates of the storage capacity of water in the interior of the Earth and other terrestrial planets vary significantly. One interpretation is that water in planetary interiors exists primarily as hydrogen ions, dissociated from liquid water, that are associated with point defects in the crystal structure of nominally anhydrous minerals. However, dislocations and grain boundaries may contribute significantly to the storage capacity of water in planetary interiors, but hydrogen concentrations in dislocations and grain boundaries are difficult to quantify. To measure the water storage capacity of dislocations and grain boundaries, we are analyzing results from high-temperature and high-pressure experiments where deuterium, a stable isotope of hydrogen, was incorporated into olivine, the dominate phase in the upper mantle. Compared to hydrogen, deuterium concentrations can be determined at much higher spatial resolution using secondary-ion mass spectroscopy. The concentration of deuterium in the samples will also be quantified using Fourier transform infrared spectroscopy for comparison to results for hydrogen-bearing olivine. The spatial distribution of regions with different densities of geometrically-necessary dislocations and the locations of grain boundaries will be determined using electron-backscatter diffraction (EBSD) analyses. Correlation of the concentration of deuterium with dislocation densities and grain boundaries will be used to examine the partitioning of water-derived species between the different types of defects. Ultimately, these data will be used to place more realistic bounds on the storage capacity of water in the interior of Earth and of other terrestrial planets.

  1. RESEND, Infinitely Dilute Point Cross-Sections Calculation from ENDF/B Resonance Parameter. ADLER, ENDF/B Adler-Adler Resonance Parameter to Point Cross-Sections with Doppler Broadening

    International Nuclear Information System (INIS)

    Bhat, M.R.; Ozer, O.

    1982-01-01

    1 - Description of problem or function: RESEND generates infinitely- dilute, un-broadened, point cross sections in the ENDF format by combining ENDF File 3 background cross sections with points calculated from ENDF File 2 resonance parameter data. ADLER calculates total, capture, and fission cross sections from the corresponding Adler-Adler parameters in the ENDF/B File 2 Version II data and also Doppler-broadens cross sections. 2 - Method of solution: RESEND calculations are done in two steps by two separate sections of the program. The first section does the resonance calculation and stores the results on a scratch file. The second section combines the data from the scratch file with background cross sections and prints the results. ADLER uses the Adler-Adler formalism. 3 - Restrictions on the complexity of the problem: RESEND expects its input to be a standard mode BCD ENDF file (Version II/III). Since the output is also a standard mode BCD ENDF file, the program is limited by the six significant figure accuracy inherent in the ENDF formats. (If the cross section has been calculated at two points so close in energy that only their least significant figures differ, that interval is assumed to have converged, even if other convergence criteria may not be satisfied.) In the unresolved range the cross sections have been averaged over a Porter-Thomas distribution. In some regions the calculated resonance cross sections may be negative. In such cases the standard convergence criterion would cause an unnecessarily large number of points to be produced in the region where the cross section becomes zero. For this reason an additional input convergence criterion (AVERR) may be used. If the absolute value of the cross section at both ends of an interval is determined to be less than AVERR then the interval is assumed to have converged. There are no limitations on the total number of points generated. The present ENDF (Version II/III) formats restrict the total number of

  2. Non-Abelian monopole in the parameter space of point-like interactions

    International Nuclear Information System (INIS)

    Ohya, Satoshi

    2014-01-01

    We study non-Abelian geometric phase in N=2 supersymmetric quantum mechanics for a free particle on a circle with two point-like interactions at antipodal points. We show that non-Abelian Berry’s connection is that of SU(2) magnetic monopole discovered by Moody, Shapere and Wilczek in the context of adiabatic decoupling limit of diatomic molecule. - Highlights: • Supersymmetric quantum mechanics is an ideal playground for studying geometric phase. • We determine the parameter space of supersymmetric point-like interactions. • Berry’s connection is given by a Wu–Yang-like magnetic monopole in SU(2) Yang–Mills

  3. Subsurface defects structural evolution in nano-cutting of single crystal copper

    International Nuclear Information System (INIS)

    Wang, Quanlong; Bai, Qingshun; Chen, Jiaxuan; Sun, Yazhou; Guo, Yongbo; Liang, Yingchun

    2015-01-01

    Highlights: • An innovative analysis method is adopted to analyze nano-cutting process accurately. • A characteristic SFT and stair-rod dislocation are found in subsurface defect layer. • The formation mechanism of stair-rod dislocation is investigated. • The local atomic structure of subsurface defects is introduced. - Abstract: In this work, molecular dynamics simulation is performed to study the subsurface defects structural distribution and its evolution during nano-cutting process of single crystal copper. The formation mechanism of chip and machined surface is interviewed by analyzing the dislocation evolution and atomic migration. The centro-symmetry parameter and spherical harmonics method are adopted to characterize the distribution and evolution of the subsurface defect structures and local atomic structures. The results show that stacking faults, dislocation loops, “V-shaped” dislocation loops, and plenty of point defects are formed during the machined surface being formed in shear-slip zone. In subsurface damage layers, stair-rod dislocation, stacking fault tetrahedra, atomic cluster defect, and vacancy defect are formed. And the formation mechanism of stair-rod dislocation is investigated by atomic-scale structure evolution. The local atomic structures of subsurface defects are icosahedrons, hexagonal close packed, body-centered cubic, and defect face center cubic, and the variations of local atomic structures are investigated

  4. Subsurface defects structural evolution in nano-cutting of single crystal copper

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Quanlong [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Bai, Qingshun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Chen, Jiaxuan, E-mail: wangquanlong0@hit.edu.cn [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Sun, Yazhou [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Guo, Yongbo [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liang, Yingchun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2015-07-30

    Highlights: • An innovative analysis method is adopted to analyze nano-cutting process accurately. • A characteristic SFT and stair-rod dislocation are found in subsurface defect layer. • The formation mechanism of stair-rod dislocation is investigated. • The local atomic structure of subsurface defects is introduced. - Abstract: In this work, molecular dynamics simulation is performed to study the subsurface defects structural distribution and its evolution during nano-cutting process of single crystal copper. The formation mechanism of chip and machined surface is interviewed by analyzing the dislocation evolution and atomic migration. The centro-symmetry parameter and spherical harmonics method are adopted to characterize the distribution and evolution of the subsurface defect structures and local atomic structures. The results show that stacking faults, dislocation loops, “V-shaped” dislocation loops, and plenty of point defects are formed during the machined surface being formed in shear-slip zone. In subsurface damage layers, stair-rod dislocation, stacking fault tetrahedra, atomic cluster defect, and vacancy defect are formed. And the formation mechanism of stair-rod dislocation is investigated by atomic-scale structure evolution. The local atomic structures of subsurface defects are icosahedrons, hexagonal close packed, body-centered cubic, and defect face center cubic, and the variations of local atomic structures are investigated.

  5. Influence of the parameters of pulsed electron irradiation on the efficiency of formation of defects in silicon

    International Nuclear Information System (INIS)

    Abdusattarov, A.G.; Emtsev, V.V.; Mashovets, T.V.

    1989-01-01

    There is as yet no agreement about the mechanism of the influence of the rate of irradiation on the rate of radiation-defect formation in semiconductors. In the case of silicon some authors attribute this mechanism to the influence of excitation of the electron subsystem on the processes resulting in the formation of secondary defects. Other authors are of the opinion that the rate of excitation of the electron subsystem influences the ratio of the probabilities of separation and annihilation of components of a Frenkel pair. A more careful analysis of this situation however forces are to revise this point of view. The authors consider in greater detail the process of homogeneous annihilation of the components of a Frenkel pair in silicon

  6. Non-probabilistic defect assessment for structures with cracks based on interval model

    International Nuclear Information System (INIS)

    Dai, Qiao; Zhou, Changyu; Peng, Jian; Chen, Xiangwei; He, Xiaohua

    2013-01-01

    Highlights: • Non-probabilistic approach is introduced to defect assessment. • Definition and establishment of IFAC are put forward. • Determination of assessment rectangle is proposed. • Solution of non-probabilistic reliability index is presented. -- Abstract: Traditional defect assessment methods conservatively treat uncertainty of parameters as safety factors, while the probabilistic method is based on the clear understanding of detailed statistical information of parameters. In this paper, the non-probabilistic approach is introduced to the failure assessment diagram (FAD) to propose a non-probabilistic defect assessment method for structures with cracks. This novel defect assessment method contains three critical processes: establishment of the interval failure assessment curve (IFAC), determination of the assessment rectangle, and solution of the non-probabilistic reliability degree. Based on the interval theory, uncertain parameters such as crack sizes, material properties and loads are considered as interval variables. As a result, the failure assessment curve (FAC) will vary in a certain range, which is defined as IFAC. And the assessment point will vary within a rectangle zone which is defined as an assessment rectangle. Based on the interval model, the establishment of IFAC and the determination of the assessment rectangle are presented. Then according to the interval possibility degree method, the non-probabilistic reliability degree of IFAC can be determined. Meanwhile, in order to clearly introduce the non-probabilistic defect assessment method, a numerical example for the assessment of a pipe with crack is given. In addition, the assessment result of the proposed method is compared with that of the traditional probabilistic method, which confirms that this non-probabilistic defect assessment can reasonably resolve the practical problem with interval variables

  7. Non-probabilistic defect assessment for structures with cracks based on interval model

    Energy Technology Data Exchange (ETDEWEB)

    Dai, Qiao; Zhou, Changyu, E-mail: changyu_zhou@163.com; Peng, Jian; Chen, Xiangwei; He, Xiaohua

    2013-09-15

    Highlights: • Non-probabilistic approach is introduced to defect assessment. • Definition and establishment of IFAC are put forward. • Determination of assessment rectangle is proposed. • Solution of non-probabilistic reliability index is presented. -- Abstract: Traditional defect assessment methods conservatively treat uncertainty of parameters as safety factors, while the probabilistic method is based on the clear understanding of detailed statistical information of parameters. In this paper, the non-probabilistic approach is introduced to the failure assessment diagram (FAD) to propose a non-probabilistic defect assessment method for structures with cracks. This novel defect assessment method contains three critical processes: establishment of the interval failure assessment curve (IFAC), determination of the assessment rectangle, and solution of the non-probabilistic reliability degree. Based on the interval theory, uncertain parameters such as crack sizes, material properties and loads are considered as interval variables. As a result, the failure assessment curve (FAC) will vary in a certain range, which is defined as IFAC. And the assessment point will vary within a rectangle zone which is defined as an assessment rectangle. Based on the interval model, the establishment of IFAC and the determination of the assessment rectangle are presented. Then according to the interval possibility degree method, the non-probabilistic reliability degree of IFAC can be determined. Meanwhile, in order to clearly introduce the non-probabilistic defect assessment method, a numerical example for the assessment of a pipe with crack is given. In addition, the assessment result of the proposed method is compared with that of the traditional probabilistic method, which confirms that this non-probabilistic defect assessment can reasonably resolve the practical problem with interval variables.

  8. Point defects in dilute nitride III-N-As and III-N-P

    International Nuclear Information System (INIS)

    Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

    2006-01-01

    We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As Ga antisites and Ga i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides

  9. Defect properties from X-ray scattering experiments

    International Nuclear Information System (INIS)

    Peisl, H.

    1976-01-01

    Lattice distortions due to defects in crystals can be studied most directly by elastic X-ray or neutron scattering experiments. The 'size' of the defects can be determined from the shift of the Bragg reflections. Defect induced diffuse scattering intensity close to and between Bragg reflections gives information on the strength and symmetry of the distortion fields and yields the atomic structure of point defects (interstitials, vacancies, small aggregates). Diffuse scattering is a very sensitive method to decide whether defects are present as isolated point defects or have formed aggregates. X-ray scattering has been used to study defects produced in various ionic crystals by γ- and neutron irradiation. After an introduction to the principles of the method the experimental results will be reviewed and discussed in some detail. (orig.) [de

  10. Influence of point defects on the near edge structure of hexagonal boron nitride

    Science.gov (United States)

    McDougall, Nicholas L.; Partridge, Jim G.; Nicholls, Rebecca J.; Russo, Salvy P.; McCulloch, Dougal G.

    2017-10-01

    Hexagonal boron nitride (hBN) is a wide-band-gap semiconductor with applications including gate insulation layers in graphene transistors, far-ultraviolet light emitting devices and as hydrogen storage media. Due to its complex microstructure, defects in hBN are challenging to identify. Here, we combine x-ray absorption near edge structure (XANES) spectroscopy with ab initio theoretical modeling to identify energetically favorable defects. Following annealing of hBN samples in vacuum and oxygen, the B and N K edges exhibited angular-dependent peak modifications consistent with in-plane defects. Theoretical calculations showed that the energetically favorable defects all produce signature features in XANES. Comparing these calculations with experiments, the principle defects were attributed to substitutional oxygen at the nitrogen site, substitutional carbon at the boron site, and hydrogen passivated boron vacancies. Hydrogen passivation of defects was found to significantly affect the formation energies, electronic states, and XANES. In the B K edge, multiple peaks above the major 1 s to π* peak occur as a result of these defects and the hydrogen passivated boron vacancy produces the frequently observed doublet in the 1 s to σ* transition. While the N K edge is less sensitive to defects, features attributable to substitutional C at the B site were observed. This defect was also calculated to have mid-gap states in its band structure that may be responsible for the 4.1-eV ultraviolet emission frequently observed from this material.

  11. Thermal defect annealing of swift heavy ion irradiated ThO2

    Science.gov (United States)

    Palomares, Raul I.; Tracy, Cameron L.; Neuefeind, Joerg; Ewing, Rodney C.; Trautmann, Christina; Lang, Maik

    2017-08-01

    Isochronal annealing, neutron total scattering, and Raman spectroscopy were used to characterize the structural recovery of polycrystalline ThO2 irradiated with 2-GeV Au ions to a fluence of 1 × 1013 ions/cm2. Neutron diffraction patterns show that the Bragg signal-to-noise ratio increases and the unit cell parameter decreases as a function of isochronal annealing temperature, with the latter reaching its pre-irradiation value by 750 °C. Diffuse neutron scattering and Raman spectroscopy measurements indicate that an isochronal annealing event occurs between 275-425 °C. This feature is attributed to the annihilation of oxygen point defects and small oxygen defect clusters.

  12. Parameters of radiation defects in GaP and GaAssub(1-x)Psub(x) with thermostimulated current measurements

    International Nuclear Information System (INIS)

    Brajlovskij, E.Yu.; Marchuk, N.D.

    1980-01-01

    Introduction of point defects in gallium phosphide crystals and GaAssub(1-x)Psub(x) solid solutions under the action of 1 MeV electrons is studied by TSC method on Schottky barriers. The TSC spectra processing using the computer is given. In GaP crystals the dominant electron and hole traps are D-centers (Esub(c)-1.24 eV) and M-centers (Esub(v)+1.43 eV). The received level spectrum explains the compensation of conductivity of n- and p-lGaP under irradiation. It is shown that main defects observed in electron irradiated GaP are most likely phosphorus vacancies (D-center)and gallium vacancies (M-center)

  13. Using ANFIS for selection of more relevant parameters to predict dew point temperature

    International Nuclear Information System (INIS)

    Mohammadi, Kasra; Shamshirband, Shahaboddin; Petković, Dalibor; Yee, Por Lip; Mansor, Zulkefli

    2016-01-01

    Highlights: • ANFIS is used to select the most relevant variables for dew point temperature prediction. • Two cities from the central and south central parts of Iran are selected as case studies. • Influence of 5 parameters on dew point temperature is evaluated. • Appropriate selection of input variables has a notable effect on prediction. • Considering the most relevant combination of 2 parameters would be more suitable. - Abstract: In this research work, for the first time, the adaptive neuro fuzzy inference system (ANFIS) is employed to propose an approach for identifying the most significant parameters for prediction of daily dew point temperature (T_d_e_w). The ANFIS process for variable selection is implemented, which includes a number of ways to recognize the parameters offering favorable predictions. According to the physical factors influencing the dew formation, 8 variables of daily minimum, maximum and average air temperatures (T_m_i_n, T_m_a_x and T_a_v_g), relative humidity (R_h), atmospheric pressure (P), water vapor pressure (V_P), sunshine hour (n) and horizontal global solar radiation (H) are considered to investigate their effects on T_d_e_w. The used data include 7 years daily measured data of two Iranian cities located in the central and south central parts of the country. The results indicate that despite climate difference between the considered case studies, for both stations, V_P is the most influential variable while R_h is the least relevant element. Furthermore, the combination of T_m_i_n and V_P is recognized as the most influential set to predict T_d_e_w. The conducted examinations show that there is a remarkable difference between the errors achieved for most and less relevant input parameters, which highlights the importance of appropriate selection of input parameters. The use of more than two inputs may not be advisable and appropriate; thus, considering the most relevant combination of 2 parameters would be more suitable

  14. Study of the point defects formed in cobalt by electron bombardment; Etude des defauts ponctuels crees par bombardement electronique dans le cobalt

    Energy Technology Data Exchange (ETDEWEB)

    Sulpice, G [Commissariat a l' Energie Atomique, 38 - Grenoble (France). Centre d' Etudes Nucleaires

    1968-12-01

    A study of the point defects formed in cobalt by electron bombardment is presented. The results are compared with those previously obtained for two other ferromagnetic metals of different structure, iron and nickel. In the first part we give a review of the literature concerning the creation of point defects, their contribution to resistivity and their annihilation mode in the three structure types. We then describe the experimental techniques adapted, in particular the study of the resistivity increase during a linear temperature rise. Our investigations concern the following, essential points : the observation of the successive annihilation stages of the point defects formed in pure cobalt, a study of the variations with respect to the doses and energy of the incident particles, and the determination of the annealing kinetics and the corresponding activation energies. The results are finally compared with the various models of point defect annihilation proposed for other metals: none of these interpretations is in perfect agreement with our results. In the case of cobalt we are thus led to modify the model proposed by our laboratory for iron an nickel. The difference between these three metals is explained by the anisotropic character of the cobalt matrix. (author) [French] Nous presentons une etude des defauts ponctuels crees par bombardement electronique dans le cobalt et comparons nos resultats a ceux obtenus precedemment dans deux autres metaux ferromagnetiques de structure differente, le fer et le nickel. Dans une premiere partie nous faisons une mise au point bibliographique comparee sur la creation des defauts, leur contribution a la resistivite et leur mode d'annihilation dans les trois types de structure. Nous decrivons ensuite les techniques experimentales mises au point, en particulier l'etude du revenu de la resistivite au cours d'une montee lineaire de temperature. Au cours de ce travail, nous avons mis en evidence les stades successifs d

  15. Embedded defects

    International Nuclear Information System (INIS)

    Barriola, M.; Vachaspati, T.; Bucher, M.

    1994-01-01

    We give a prescription for embedding classical solutions and, in particular, topological defects in field theories which are invariant under symmetry groups that are not necessarily simple. After providing examples of embedded defects in field theories based on simple groups, we consider the electroweak model and show that it contains the Z string and a one-parameter family of strings called the W(α) string. It is argued that although the members of this family are gauge equivalent when considered in isolation, each member becomes physically distinct when multistring configurations are considered. We then turn to the issue of stability of embedded defects and demonstrate the instability of a large class of such solutions in the absence of bound states or condensates. The Z string is shown to be unstable for all values of the Higgs boson mass when θ W =π/4. W strings are also shown to be unstable for a large range of parameters. Embedded monopoles suffer from the Brandt-Neri-Coleman instability. Finally, we connect the electroweak string solutions to the sphaleron

  16. Effect of fuel fabrication parameters on performance- designer's point of view

    International Nuclear Information System (INIS)

    Prasad, P.N.; Ravi, M.; Soni, R.; Bajaj, S.S.; Bhardwaj, S.A.

    2004-01-01

    The fuel bundle performance in reactor depends upon the material properties, dimensions of the different components and their inter-compatibility. This paper brings out the fuel parameters required to be optimised to achieve better fuel reliability, operational flexibility, safety and economics from the designer point of view

  17. Peculiarities of the point radiation defects accumulation in the fine- and ultra-disperse metallic media

    International Nuclear Information System (INIS)

    Aliev, B.A.; Zajkin, Yu.A.; Potapov, A.S.

    2004-01-01

    Fine-dispersive powders are a samples of solid systems. In which under irradiation the particle surface layers defect structure changes and has mostly an effect on structural transformations. Theoretical calculations and experimental data show, that the increased interstitials atoms concentration near particles surface during irradiation by either electrons or gamma quanta with energy about 1 MeV give rise to intensive pores healing. At the same time as the dense surface layer formation the pores healing leads to the brachiate borders system formation. The borders serve as pathways for accelerated diffusion. Sintering process and a metal recrystallization are stimulating as well. Both processes lead to the ordered super-structure formation which contributes the additional contribution in an improvement of the mechanical properties of a metal. A liner sizes of the ordered net depend on both the powder sizes and the irradiation conditions. The especial interest present a conditions for such superstructure formation (when the particle sizes are becoming so small (∼1 μm), that effect has being resulted on a defect-formation in the whole volume of a powder particle). In the considered case the point radiation defects accumulation kinetics in the metallic particle is analyzed on the ground of the equation system for atomic concentrations both interstitial atoms and vacancies. The numerical solution of this equation system shows, that particles sizes decline leads to considerable micro-pores healing increase and improvement of conditions for net strengthening. In dependence on irradiation conditions (temperature, dose and dose rate) the forming super-structure could have micro- and nano-sizes

  18. Influence of radiation defects on tritium release parameters from Li2O

    International Nuclear Information System (INIS)

    Grishmanov, V.; Tanaka, S.; Yoneoka, T.

    1998-01-01

    The study of the influence of radiation defects on tritium release behavior from polycrystalline Li 2 O was performed by simultaneous measurements of the luminescence emission and tritium release. It was found that the radiation defects in Li 2 O introduced by electron irradiation cause the retention of tritium. It is thought that the tritium recovery is affected by the formation of a Li-T bond, which is tolerant of high temperatures. The retardation of tritium decreases with increasing absorbed dose in the dose range from 50 to 140 MGy. The aggregation of radiation defects at high irradiation doses is considered to be responsible for the decrease of the interaction of tritium with radiation defects. The mechanism of the interaction of radiation defects with tritium is discussed. (orig.)

  19. Secondary defects in non-metallic solids

    International Nuclear Information System (INIS)

    Ashbee, K.H.G.; Hobbs, L.W.

    1977-01-01

    This paper points out features of secondary defect formation which are peculiar to non-metallic solids (excluding elemental semiconductors). Most of the materials of interest are compounds of two or more (usually more or less ionic) atomic species, and immediate consequence of which is a need to maintain both stoichiometry (or accommodate non-stoichiometry) and order. Primary defects in these solids, whether produced thermally, chemically or by irradiation, seldom are present or aggregate in exactly stoichiometric proportions, and the resulting extending defect structures can be quite distinct from those found in metallic solids. Where stoichiometry is maintained, it is often convenient to describe extended defects in terms of alterations in the arrangement of 'molecular' units. The adoption of this procedure enables several novel features of extended defect structures in non-metals to be explained. There are several ways in which a range of non-stoichiometry can be accommodated, which include structural elimination of point defects, nucleation of new coherent phases of altered stoichiometry, and decomposition. (author)

  20. Modeling of Semiconductors and Correlated Oxides with Point Defects by First Principles Methods

    KAUST Repository

    Wang, Hao

    2014-01-01

    Point defects in silicon, vanadium dioxide, and doped ceria are investigated by density functional theory. Defects involving vacancies and interstitial oxygen and carbon in silicon are after formed in outer space and significantly affect device performances. The screened hybrid functional by Heyd-Scuseria-Ernzerhof is used to calculate formation energies, binding energies, and electronic structures of the defective systems because standard density functional theory underestimates the bang gap of silicon. The results indicate for the A-center a −2 charge state. Tin is proposed to be an effective dopant to suppress the formation of A-centers. For the total energy difference between the A- and B-type carbon related G-centers we find close agreement with the experiment. The results indicate that the C-type G-center is more stable than both the A- and B-types. The electronic structures of the monoclinic and rutile phases of vanadium dioxide are also studied using the Heyd-Scuseria-Ernzerhof functional. The ground states of the pure phases obtained by calculations including spin polarization disagree with the experimental observations that the monoclinic phase should not be magnetic, the rutile phase should be metallic, and the monoclinic phase should have a lower total energy than the rutile phase. By tuning the Hartree-Fock fraction α to 10% the agreement with experiments is improved in terms of band gaps and relative energies of the phases. A calculation scheme is proposed to simulate the relationship between the transition temperature of the metal-insulator transition and the dopant concentration in tungsten doped vanadium dioxide. We achieve good agreement with the experimental situation. 18.75% and 25% yttrium, lanthanum, praseodymium, samarium, and gadolinium doped ceria supercells generated by the special quasirandom structure approach are employed to investigate the impact of doping on the O diffusion. The experimental behavior of the conductivity for the

  1. Modeling of Semiconductors and Correlated Oxides with Point Defects by First Principles Methods

    KAUST Repository

    Wang, Hao

    2014-06-15

    Point defects in silicon, vanadium dioxide, and doped ceria are investigated by density functional theory. Defects involving vacancies and interstitial oxygen and carbon in silicon are after formed in outer space and significantly affect device performances. The screened hybrid functional by Heyd-Scuseria-Ernzerhof is used to calculate formation energies, binding energies, and electronic structures of the defective systems because standard density functional theory underestimates the bang gap of silicon. The results indicate for the A-center a −2 charge state. Tin is proposed to be an effective dopant to suppress the formation of A-centers. For the total energy difference between the A- and B-type carbon related G-centers we find close agreement with the experiment. The results indicate that the C-type G-center is more stable than both the A- and B-types. The electronic structures of the monoclinic and rutile phases of vanadium dioxide are also studied using the Heyd-Scuseria-Ernzerhof functional. The ground states of the pure phases obtained by calculations including spin polarization disagree with the experimental observations that the monoclinic phase should not be magnetic, the rutile phase should be metallic, and the monoclinic phase should have a lower total energy than the rutile phase. By tuning the Hartree-Fock fraction α to 10% the agreement with experiments is improved in terms of band gaps and relative energies of the phases. A calculation scheme is proposed to simulate the relationship between the transition temperature of the metal-insulator transition and the dopant concentration in tungsten doped vanadium dioxide. We achieve good agreement with the experimental situation. 18.75% and 25% yttrium, lanthanum, praseodymium, samarium, and gadolinium doped ceria supercells generated by the special quasirandom structure approach are employed to investigate the impact of doping on the O diffusion. The experimental behavior of the conductivity for the

  2. First-principles study of point-defect production in Si and SiC

    International Nuclear Information System (INIS)

    Windl, W.; Lenosky, T.J.; Kress, J.D.; Voter, A.F.

    1998-03-01

    The authors have calculated the displacement-threshold energy E(d) for point-defect production in Si and SiC using empirical potentials, tight-binding, and first-principles methods. They show that -- depending on the knock-on direction -- 64-atom simulation cells can be sufficient to allow a nearly finite-size-effect-free calculation, thus making the use of first-principles methods possible. They use molecular dynamics (MD) techniques and propose the use of a sudden approximation which agrees reasonably well with the MD results for selected directions and which allows estimates of Ed without employing an MD simulation and the use of computationally demanding first-principles methods. Comparing the results with experiment, the authors find the full self-consistent first-principles method in conjunction with the sudden approximation to be a reliable and easy method to predict E d . Furthermore, they have examined the temperature dependence of E d for C in SiC and found it to be negligible

  3. Numerical simulation of a metal corrosion for a point defect for a organic protection layer

    International Nuclear Information System (INIS)

    Vautrin-Ul, Ch.; Chausse, A.; Stafiej, J.; Badiali, J.P.

    2005-01-01

    The safety of radioactive wastes disposal requires a big knowledge on their aging facing a corrosive environment. The corrosion is a complex phenomenon which implies many processes bound to the physic and the chemistry of the system. This approach proposes, from a little number of simple processes, numerical simulation which will define theses complex phenomenon. The presented model is a 2 dimension model at a mesoscopic scale and based on cellular automates. It allows the simulation of a metal evolution, protected by a polymer layer and in contact at one point with a corrosive media at a defect of the layer. (A.L.B.)

  4. Study on the intrinsic defects in tin oxide with first-principles method

    Science.gov (United States)

    Sun, Yu; Liu, Tingyu; Chang, Qiuxiang; Ma, Changmin

    2018-04-01

    First-principles and thermodynamic methods are used to study the contribution of vibrational entropy to defect formation energy and the stability of the intrinsic point defects in SnO2 crystal. According to thermodynamic calculation results, the contribution of vibrational entropy to defect formation energy is significant and should not be neglected, especially at high temperatures. The calculated results indicate that the oxygen vacancy is the major point defect in undoped SnO2 crystal, which has a higher concentration than that of the other point defect. The property of negative-U is put forward in SnO2 crystal. In order to determine the most stable defects much clearer under different conditions, the most stable intrinsic defect as a function of Fermi level, oxygen partial pressure and temperature are described in the three-dimensional defect formation enthalpy diagrams. The diagram visually provides the most stable point defects under different conditions.

  5. A study on density functional theory of the effect of pressure on the formation and migration enthalpies of intrinsic point defects in growing single crystal Si

    Science.gov (United States)

    Sueoka, Koji; Kamiyama, Eiji; Kariyazaki, Hiroaki

    2012-05-01

    In 1982, Voronkov presented a model describing point defect behavior during the growth of single crystal Si from a melt and derived an expression to predict if the crystal was vacancy- or self-interstitial-rich. Recently, Vanhellemont claimed that one should take into account the impact of compressive stress introduced by the thermal gradient at the melt/solid interface by considering the hydrostatic pressure dependence of the formation enthalpy of the intrinsic point defects. To evaluate the impact of thermal stress more correctly, the pressure dependence of both the formation enthalpy (Hf) and the migration enthalpy (Hm) of the intrinsic point defects should be taken into account. Furthermore, growing single crystal Si is not under hydrostatic pressure but almost free of external pressure (generally in Ar gas under reduced pressure). In the present paper, the dependence of Hf and Hm on the pressure P, or in other words, the pressure dependence of the formation energy (Ef) and the relaxation volume (vf), is quantified by density functional theory calculations. Although a large number of ab initio calculations of the properties of intrinsic point defects have been published during the last years, calculations for Si crystals under pressure are rather scarce. For vacancies V, the reported pressure dependences of HfV are inconsistent. In the present study, by using 216-atom supercells with a sufficient cut-off energy and mesh of k-points, the neutral I and V are found to have nearly constant formation energies EfI and EfV for pressures up to 1 GPa. For the relaxation volume, vfI is almost constant while vfV decreases linearly with increasing pressure P. In case of the hydrostatic pressure Ph, the calculated formation enthalpy HfI and migration enthalpy HmI at the [110] dumbbell site are given by HfI = 3.425 - 0.057 × Ph (eV) and HmI = 0.981 - 0.039 × Ph (eV), respectively, with Ph given in GPa. The calculated HfV and HmV dependencies on Ph given by HfV = 3.543 - 0

  6. Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

    KAUST Repository

    Flemban, Tahani H.; Sequeira, M. C.; Zhang, Z.; Venkatesh, S.; Alves, E.; Lorenz, K.; Roqan, Iman S.

    2016-01-01

    Gd-doped ZnO thin films were prepared using pulsed laser deposition at different oxygen pressures and varied Gd concentrations. The effects of oxygen deficiency-related defects on the Gd incorporation, optical and structural properties, were explored by studying the impact of oxygen pressure during deposition and post-growth thermal annealing in vacuum. Rutherford Backscattering Spectrometry revealed that the Gd concentration increases with increasing oxygen pressure for samples grown with the same Gd-doped ZnO target. Unexpectedly, the c-lattice parameter of the samples tends to decrease with increasing Gd concentration, suggesting that Gd-defect complexes play an important role in the structural properties. Using low-temperature photoluminescence(PL), Raman measurements and density functional theory calculations, we identified oxygen vacancies as the dominant intrinsic point defects. PL spectra show a defect band related to oxygen vacancies for samples grown at oxygen deficiency.

  7. Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

    KAUST Repository

    Flemban, Tahani H.

    2016-02-08

    Gd-doped ZnO thin films were prepared using pulsed laser deposition at different oxygen pressures and varied Gd concentrations. The effects of oxygen deficiency-related defects on the Gd incorporation, optical and structural properties, were explored by studying the impact of oxygen pressure during deposition and post-growth thermal annealing in vacuum. Rutherford Backscattering Spectrometry revealed that the Gd concentration increases with increasing oxygen pressure for samples grown with the same Gd-doped ZnO target. Unexpectedly, the c-lattice parameter of the samples tends to decrease with increasing Gd concentration, suggesting that Gd-defect complexes play an important role in the structural properties. Using low-temperature photoluminescence(PL), Raman measurements and density functional theory calculations, we identified oxygen vacancies as the dominant intrinsic point defects. PL spectra show a defect band related to oxygen vacancies for samples grown at oxygen deficiency.

  8. A study of point defects created by electron irradiation of dilute iron-carbon alloys

    International Nuclear Information System (INIS)

    Leveque, J.L.

    1969-10-01

    Resistivity and magnetic after effect (m.a.e.) measurements are used to study the influence of carbon atoms on the annealing process of point defects created by electron irradiation (3 MeV) at low temperature (20 deg. K). The presence of the carbon atoms has a strong influence on the recovery sub-stage I E and stage III. For the former, the carbon impurity traps the freely migrating iron interstitial. For the latter the effect is interpreted as being due to formation during annealing, of a carbon vacancy pair. A pronounced m.a.e. band is attributed to the reorientation of this carbon vacancy complex. All these results are coherent with the interpretation of a low temperature migrating free interstitial. (author) [fr

  9. Cathodoluminescence investigation of Ge-point defects in silica-based optical fibers

    Energy Technology Data Exchange (ETDEWEB)

    Reghioua, I., E-mail: imene.reghioua@univ-st-etienne.fr [Univ-Lyon, Laboratoire H. Curien, UMR CNRS 5516, 18 rue du Pr. Benoît Lauras, 42000 Saint-Etienne (France); Girard, S.; Alessi, A.; Di Francesca, D. [Univ-Lyon, Laboratoire H. Curien, UMR CNRS 5516, 18 rue du Pr. Benoît Lauras, 42000 Saint-Etienne (France); Martin-Samos, L.; Fanetti, M. [Materials Research Laboratory, University of Nova Gorica, Vipavska 11c 5270-Ajdovscina (Slovenia); Richard, N.; Raine, M. [CEA, DAM, DIF, F91297, Arpajon (France); Valant, M. [Materials Research Laboratory, University of Nova Gorica, Vipavska 11c 5270-Ajdovscina (Slovenia); Boukenter, A.; Ouerdane, Y. [Univ-Lyon, Laboratoire H. Curien, UMR CNRS 5516, 18 rue du Pr. Benoît Lauras, 42000 Saint-Etienne (France)

    2016-11-15

    Cathodoluminescence (CL) measurements have been performed on Ge doped and Ge/F co-doped optical fibers, in the aim of studying the spatial distributions of the emitting precursor defects present in the as-drawn optical fiber as well as those of the radiation induced centers generated by the 10 keV electron exposure. Using the CL instrument, we recorded different emission bands located in the visible spectral domain (300–750 nm) as well as CL imaging of associated defects, with a spatial resolution of about 1 µm, along the fiber transverse cross sections. In the pristine fiber, Germanium Lone Pair Centers (GLPCs) emitting at 400 nm are the main precursor sites observed in both fibers. Whereas during electron exposure, these centers are converted into other Ge-related defects. In this paper, we studied in situ their bleaching kinetic using CL monochromatic imaging. As expected, our results show that the GLPC signal decreases with the electron fluence, confirming its precursor role. Thanks to the CL abilities, we also demonstrate that the GLPC conversion into radiation induced defects (and then its bleaching kinetic) depends on the germanium concentration, opening the way to a better control of the radiation sensitivity of germanosilicate glass.

  10. Thermodynamic calculations of self- and hetero-diffusion parameters in germanium

    International Nuclear Information System (INIS)

    Saltas, V.; Vallianatos, F.

    2015-01-01

    In the present work, the diffusion coefficients of n- and p-type dopants (P, As, Sb, Al) and self-diffusion in crystalline germanium are calculated from the bulk elastic properties of the host material based on the cBΩ thermodynamic model. The calculated diffusion coefficients as a function of temperature and the activation enthalpies prove to be in full agreement with the reported experimental results. Additional point defect parameters such as activation entropy, activation volume and activation Gibbs free energy are also calculated for each diffusing element. The pressure dependence of self-diffusion coefficients in germanium is also verified at high temperatures (876 K–1086 K), in agreement with reported results ranging from ambient pressure up to 600 MPa and is further calculated at pressures up to 3 GPa, where the phase transition to Ge II occurs. - Highlights: • Calculation of diffusivities of n- and p-type dopants in Ge from elastic properties. • Calculation of point defect parameters according to the cBΩ thermodynamic model. • Prediction of the pressure dependence of self-diffusion coefficients in Ge

  11. Nanoscale interfacial defect shedding in a growing nematic droplet.

    Science.gov (United States)

    Gurevich, Sebastian; Provatas, Nikolas; Rey, Alejandro

    2017-08-01

    Interfacial defect shedding is the most recent known mechanism for defect formation in a thermally driven isotropic-to-nematic phase transition. It manifests in nematic-isotropic interfaces going through an anchoring switch. Numerical computations in planar geometry established that a growing nematic droplet can undergo interfacial defect shedding, nucleating interfacial defect structures that shed into the bulk as +1/2 point defects. By extending the study of interfacial defect shedding in a growing nematic droplet to larger length and time scales, and to three dimensions, we unveil an oscillatory growth mode involving shape and anchoring transitions that results in a controllable regular distributions of point defects in planar geometry, and complex structures of disclination lines in three dimensions.

  12. Effects of LiDAR point density, sampling size and height threshold on estimation accuracy of crop biophysical parameters.

    Science.gov (United States)

    Luo, Shezhou; Chen, Jing M; Wang, Cheng; Xi, Xiaohuan; Zeng, Hongcheng; Peng, Dailiang; Li, Dong

    2016-05-30

    Vegetation leaf area index (LAI), height, and aboveground biomass are key biophysical parameters. Corn is an important and globally distributed crop, and reliable estimations of these parameters are essential for corn yield forecasting, health monitoring and ecosystem modeling. Light Detection and Ranging (LiDAR) is considered an effective technology for estimating vegetation biophysical parameters. However, the estimation accuracies of these parameters are affected by multiple factors. In this study, we first estimated corn LAI, height and biomass (R2 = 0.80, 0.874 and 0.838, respectively) using the original LiDAR data (7.32 points/m2), and the results showed that LiDAR data could accurately estimate these biophysical parameters. Second, comprehensive research was conducted on the effects of LiDAR point density, sampling size and height threshold on the estimation accuracy of LAI, height and biomass. Our findings indicated that LiDAR point density had an important effect on the estimation accuracy for vegetation biophysical parameters, however, high point density did not always produce highly accurate estimates, and reduced point density could deliver reasonable estimation results. Furthermore, the results showed that sampling size and height threshold were additional key factors that affect the estimation accuracy of biophysical parameters. Therefore, the optimal sampling size and the height threshold should be determined to improve the estimation accuracy of biophysical parameters. Our results also implied that a higher LiDAR point density, larger sampling size and height threshold were required to obtain accurate corn LAI estimation when compared with height and biomass estimations. In general, our results provide valuable guidance for LiDAR data acquisition and estimation of vegetation biophysical parameters using LiDAR data.

  13. REVISITING THE ISN FLOW PARAMETERS, USING A VARIABLE IBEX POINTING STRATEGY

    Energy Technology Data Exchange (ETDEWEB)

    Leonard, T. W.; Möbius, E.; Heirtzler, D.; Kucharek, H.; Lee, M. A.; Schwadron, N. A., E-mail: twp5@wildcats.unh.edu, E-mail: eberhard.moebius@unh.edu, E-mail: dheirtzl@atlas.sr.unh.edu, E-mail: harald.kucharek@unh.edu, E-mail: marty.lee@unh.edu, E-mail: nathan.schwadron@unh.edu [University of New Hampshire, Space Science Center and Department of Physics, Durham, NH 03824 (United States); and others

    2015-05-01

    The Interstellar Boundary Explorer (IBEX) has observed the interstellar neutral (ISN) gas flow over the past 6 yr during winter/spring when the Earth’s motion opposes the ISN flow. Since IBEX observes the interstellar atom trajectories near their perihelion, we can use an analytical model based upon orbital mechanics to determine the interstellar parameters. Interstellar flow latitude, velocity, and temperature are coupled to the flow longitude and are restricted by the IBEX observations to a narrow tube in this parameter space. In our original analysis we found that pointing the spacecraft spin axis slightly out of the ecliptic plane significantly influences the ISN flow vector determination. Introducing the spacecraft spin axis tilt into the analytical model has shown that IBEX observations with various spin axis tilt orientations can substantially reduce the range of acceptable solutions to the ISN flow parameters as a function of flow longitude. The IBEX operations team pointed the IBEX spin axis almost exactly within the ecliptic plane during the 2012–2014 seasons, and about 5° below the ecliptic for half of the 2014 season. In its current implementation the analytical model describes the ISN flow most precisely for the spin axis orientation exactly in the ecliptic. This analysis refines the derived ISN flow parameters with a possible reconciliation between velocity vectors found with IBEX and Ulysses, resulting in a flow longitude λ{sub ∞} = 74.°5 ± 1.°7 and latitude β{sub ∞} = −5.°2 ± 0.°3, but at a substantially higher ISN temperature than previously reported.

  14. Scaling, crossover, and classical behavior in the order parameter equation for coexisting phases of benzene from triple point to critical point

    International Nuclear Information System (INIS)

    Shimansky, Yu.I.; Shimanskaya, E.T.

    1996-01-01

    The temperature dependence of the density along the coexistence curve of benzene in the vicinity of the critical point and in a wide temperature range down to the triple point was investigated. The original results as well as literature data were statistically treated. A regression analysis of data on the critical exponents and critical amplitudes used as fitting parameters in a model equations was carried out. An adequate description of the order parameter by the three-term scaling equation in the entire two-phase (liquid-gas) region of benzene was obtained with experimental values of Β O -0.352 ±0.003 and δ = 1.3 ± 0.2, which are inconsistent with the Ising model (Β O = 0.325) and the Wegner exponent (δ = 0.5), respectively. It is shown that the equation with fixed classical exponents does not adequately describe the experimental data even far from the critical point

  15. In-Situ Photoexcitation-Induced Suppression of Point Defect Generation in Ion Implanted Silicon

    International Nuclear Information System (INIS)

    Cho, C.R.; Rozgonyi, G.A.; Yarykin, N.; Zuhr, R.A.

    1999-01-01

    The formation of vacancy-related defects in n-type silicon has been studied immediately after implantation of He, Si, or Ge ions at 85 K using in-situ DLTS. A-center concentrations in He-implanted samples reach a maximum immediately after implantation, whereas, with Si or Ge ion implanted samples they continuously increase during subsequent anneals. It is proposed that defect clusters, which emit vacancies during anneals, are generated in the collision cascades of Si or Ge ions. An illumination-induced suppression of A-center formation is seen immediately after implantation of He ions at 85 K. This effect is also observed with Si or Ge ions, but only after annealing. The suppression of vacancy complex formation via photoexcitation is believed to occur due to an enhanced recombination of defects during ion implantation, and results in reduced number of vacancies remaining in the defect clusters. In p-type silicon, a reduction in K-center formation and an enhanced migration of defects are concurrently observed in the illuminated sample implanted with Si ions. These observations are consistent with a model where the injection of excess carriers modifies the defect charge state and impacts their diffusion

  16. Trends and Cut-Point Changes in Obesity Parameters by Age Groups Considering Metabolic Syndrome.

    Science.gov (United States)

    Park, Hyung Jun; Hong, Young Ho; Cho, Yun Jung; Lee, Ji Eun; Yun, Jae Moon; Kwon, Hyuktae; Kim, Sang Hyuck

    2018-02-12

    Non-communicable diseases (NCDs) are an important issue worldwide. Obesity has a close relationship with NCDs. Various age-related changes should be considered when evaluating obesity. National representative cohort data from the National Health Insurance Service National Sample Cohort from 2012 to 2013 were used. Sex-specific and age group-specific (10-year intervals) means for body mass index (BMI), waist circumference (WC), and waist-to-height ratio (WtHR) were calculated. Optimal cut-points for obesity parameters were defined as the value predicting two or more components of metabolic syndrome (except WC). The mean value and optimal cut-point for BMI decreased with age for men. The mean BMI value for women increased with age, but optimal cut-points showed no remarkable difference. The mean WC of men increased with age, but the optimal cut-points were similar for age groups. For women, the mean value and optimal cut-point for WC increased with age. Regarding WtHR, the mean value and optimal cut-point increased with age for men and women. Differences across age groups were larger for women. The mean values of the obesity indices and the optimal cut-points were changed according to age groups. This study supports the necessity of applying age group-specific cut-points for the various obesity parameters. © 2018 The Korean Academy of Medical Sciences.

  17. Data analysis strategies for the characterization of normal: superconductor point contacts by barrier strength parameter

    Science.gov (United States)

    Smith, Charles W.; Reinertson, Randal C.; Dolan, P. J., Jr.

    1993-05-01

    The theoretical description by Blonder, Tinkham, and Klapwijk [Phys. Rev. B 25, 4515 (1982)] of the I-V curves of normal: superconductor point contacts encompasses a broad range of experimental behavior, from the tunnel junction case, on the one hand, to the clean metallic microconstriction limit on the other. The theory characterizes point contacts in terms of a single parameter, the barrier strength. The differential conductance of a point contact, at zero bias, as a function of temperature, offers a direct experimental method by which the barrier strength parameter can be evaluated. In view of the full range of phenomena incorporated by this theory, we suggest several different strategies for the evaluation of the barrier strength parameter from data in the low and intermediate barrier strength regimes and for measurements in the low temperature (near T=0 K) and high temperature (near T=Tc) limits.

  18. Atomic-scale investigation of point defects and hydrogen-solute atmospheres on the edge dislocation mobility in alpha iron

    Energy Technology Data Exchange (ETDEWEB)

    Bhatia, M. A.; Solanki, K. N., E-mail: kiran.solanki@asu.edu [School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Groh, S. [Institute of Mechanics and Fluid Dynamics, TU Bergakademie Freiberg, Freiberg 09556 (Germany)

    2014-08-14

    In this study, we present atomistic mechanisms of 1/2 [111](11{sup ¯}0) edge dislocation interactions with point defects (hydrogen and vacancies) and hydrogen solute atmospheres in body centered cubic (bcc) iron. In metals such as iron, increases in hydrogen concentration can increase dislocation mobility and/or cleavage-type decohesion. Here, we first investigate the dislocation mobility in the presence of various point defects, i.e., change in the frictional stress as the edge dislocation interacts with (a) vacancy, (b) substitutional hydrogen, (c) one substitutional and one interstitial hydrogen, (d) interstitial hydrogen, (e) vacancy and interstitial hydrogen, and (f) two interstitial hydrogen. Second, we examine the role of a hydrogen-solute atmosphere on the rate of local dislocation velocity. The edge dislocation simulation with a vacancy in the compression side of the dislocation and an interstitial hydrogen atom at the tension side exhibit the strongest mechanical response, suggesting a higher potential barrier and hence, the higher frictional stress (i.e., ∼83% higher than the pure iron Peierls stress). In the case of a dislocation interacting with a vacancy on the compressive side, the vacancy binds with the edge dislocation, resulting in an increase in the friction stress of about 28% when compared with the Peierls stress of an edge dislocation in pure iron. Furthermore, as the applied strain increases, the vacancy migrates through a dislocation transportation mechanism by attaining a velocity of the same order as the dislocation velocity. For the case of the edge dislocation interacting with interstitial hydrogen on the tension side, the hydrogen atom jumps through one layer perpendicular to the glide plane during the pinning-unpinning process. Finally, our simulation of dislocation interactions with hydrogen show first an increase in the local dislocation velocity followed by a pinning of the dislocation core in the atmosphere, resulting in

  19. Dual approaches for defects condensation

    Energy Technology Data Exchange (ETDEWEB)

    Rougemont, Romulo; Grigorio, Leonardo de Souza; Wotzasek, Clovis [Universidade Federal do Rio de Janeiro (UFRJ), RJ (Brazil); Guimaraes, Marcelo Santos [Universidade do Estado do Rio de Janeiro (UERJ), RJ (Brazil)

    2009-07-01

    Full text. Due to the fact that the QCD running coupling constant becomes larger as we go into the low energy (or large distance) limit of the theory, a perturbative treatment of its infrared (IR) region is impossible. In particular, a formal mathematical demonstration of color confinement and a complete physical understanding of the exact mechanism that confines quarks and gluons are two missing points in our current knowledge of the IR-QCD. It was known that due to the Meissner effect of expulsion of magnetic fields in a electric condensate that usual superconductors should confine magnetic monopoles. That point led to the conjecture that the QCD vacuum could be a condensate of chromomagnetic monopoles, a dual superconductor (DSC). Such a chromomagnetic condensate should be responsible for the dual Meissner effect which is expected to lead to the confinement of color charges immersed in this medium. In dual superconductor models of color confinement, magnetic monopoles appear as topological defects in points of the space where the abelian projection becomes singular. Also, condensation of other kinds of defects such as vortices in superfluids and line-like defects in solids are responsible for a great variety of phase transitions, which once more proves the relevance of the subject. In the present work we review two methods that allow us to approach the condensation of defects: the Kleinert Mechanism (KM) and the Julia-Toulouse Mechanism (JTM). We show that in the limit where the vortex gauge field goes to zero, which we identify as the signature of the condensation of defects in the dual picture, these are two equivalent dual prescriptions for obtaining an effective theory for a phase where defects are condensed, starting from the fundamental theory defined in the normal phase where defects are diluted. (author)

  20. Nonstoichiometry, point defects and magnetic properties in Sr2FeMoO6−δ double perovskites

    International Nuclear Information System (INIS)

    Kircheisen, R.; Töpfer, J.

    2012-01-01

    The phase stability, nonstoichiometry and point defect chemistry of polycrystalline Sr 2 FeMoO 6−δ (SFMO) was studied by thermogravimety at 1000, 1100, and 1200 °C. Single-phase SFMO exists between −10.2≤log pO 2 ≤−13.7 at 1200 °C. At lower oxygen partial pressure a mass loss signals reductive decomposition. At higher pO 2 a mass gain indicates oxidative decomposition into SrMoO 4 and SrFeO 3−x . The nonstoichiometry δ at 1000, 1100, and 1200 °C was determined as function of pO 2 . SFMO is almost stoichiometric at the upper phase boundary (e.g. δ=0.006 at 1200 °C and log pO 2 =−10.2) and becomes more defective with decreasing oxygen partial pressure (e.g. δ=0.085 at 1200 °C and log pO 2 =−13.5). Oxygen vacancies are shown to represent majority defects. From the temperature dependence of the oxygen vacancy concentration the defect formation enthalpy was estimated (ΔH OV =253±8 kJ/mol). Samples of different nonstoichiometry δ were prepared by quenching from 1200 °C at various pO 2 . An increase of the unit cell volume with increasing defect concentration δ was found. The saturation magnetization is reduced with increasing nonstoichiometry δ. This demonstrates that in addition to Fe/Mo site disorder, oxygen nonstoichiometry is another source of reduced magnetization values. - Graphical abstract: Nonstoichiometry δ of Sr 2 FeMoO 6−δ as function of oxygen partial pressure at 1000, 1100, and 1200 °C. Highlights: ► Sr 2 FeMoO 6−δ is stable at T=1200 °C at low pO 2 only. ► Nonstoichiometry δ measured at 1200, 1100, and 1000 °C. ► Increase of oxygen vacancy concentration with lower pO 2 . ► Reduction of magnetization with increasing nonstoichiometry δ.

  1. Study of points defects produced by irradiation of monocrystalline nickel and polycrystalline gadolinium

    International Nuclear Information System (INIS)

    Cope, R.

    1969-07-01

    The work described in this thesis falls into two parts: the first comprises a study of magnetocrystalline nickel by resistivity measurements; the second is a description of resistivity and magnetic after effect measurements on an h.c.p. ferromagnetic crystal other than cobalt, namely gadolinium. For the first part we have demonstrated the existence of a small but definite orientation dependence in the creation of point defects by electron irradiation (20 deg. K) of a nickel single crystal. In particular, the effect is manifested in the form of the stage I C , II and III in the resistivity recovery. In the second part an important result has emerged: namely that there is no magnetic after effect phenomenon in a neutron irradiated (27 deg. K) ferromagnetic metal. Several considerations are discussed by way of a preliminary interpretation of this important difference between gadolinium and cobalt. (author) [fr

  2. First-principles investigation of the energetics of point defects at a grain boundary in tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Chai, Jun; Li, Yu-Hao; Niu, Liang-Liang; Qin, Shi-Yao; Zhou, Hong-Bo, E-mail: hbzhou@buaa.edu.cn; Jin, Shuo; Zhang, Ying; Lu, Guang-Hong

    2017-02-15

    Tungsten (W) and W alloys are considered as the most promising candidates for plasma facing materials in future fusion reactor. Grain boundaries (GBs) play an important role in the self-healing of irradiation defects in W. Here, we investigate the stability of point defects [vacancy and self-interstitial atoms (SIA’s)] in a Σ5(3 1 0) [0 0 1] tilt W GB by calculating the energetics using a first-principles method. It is found that both the vacancy and SIA are energetically favorable to locate at neighboring sites of the GB, suggesting the vacancy and SIA can easily segregate to the GB region with the segregation energy of 1.53 eV and 7.5 eV, respectively. This can be attributed to the special atomic configuration and large available space of the GB. The effective interaction distance between the GB and the SIA is ∼6.19 Å, which is ∼2 Å larger than that of the vacancy-GB, indicating the SIA are more preferable to locate at the GB in comparison with the vacancy. Further, the binding energy of di-vacancies in the W GB are much larger than that in bulk W, suggesting that the vacancy energetically prefers to congregate in the GB.

  3. Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

    Science.gov (United States)

    Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

    2017-09-01

    It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

  4. Holographic Chern-Simons defects

    International Nuclear Information System (INIS)

    Fujita, Mitsutoshi; Melby-Thompson, Charles M.; Meyer, René; Sugimoto, Shigeki

    2016-01-01

    We study SU(N) Yang-Mills-Chern-Simons theory in the presence of defects that shift the Chern-Simons level from a holographic point of view by embedding the system in string theory. The model is a D3-D7 system in Type IIB string theory, whose gravity dual is given by the AdS soliton background with probe D7 branes attaching to the AdS boundary along the defects. We holographically renormalize the free energy of the defect system with sources, from which we obtain the correlation functions for certain operators naturally associated to these defects. We find interesting phase transitions when the separation of the defects as well as the temperature are varied. We also discuss some implications for the Fractional Quantum Hall Effect and for 2-dimensional QCD.

  5. Characterization of Initial Parameter Information for Lifetime Prediction of Electronic Devices.

    Science.gov (United States)

    Li, Zhigang; Liu, Boying; Yuan, Mengxiong; Zhang, Feifei; Guo, Jiaqiang

    2016-01-01

    Newly manufactured electronic devices are subject to different levels of potential defects existing among the initial parameter information of the devices. In this study, a characterization of electromagnetic relays that were operated at their optimal performance with appropriate and steady parameter values was performed to estimate the levels of their potential defects and to develop a lifetime prediction model. First, the initial parameter information value and stability were quantified to measure the performance of the electronics. In particular, the values of the initial parameter information were estimated using the probability-weighted average method, whereas the stability of the parameter information was determined by using the difference between the extrema and end points of the fitting curves for the initial parameter information. Second, a lifetime prediction model for small-sized samples was proposed on the basis of both measures. Finally, a model for the relationship of the initial contact resistance and stability over the lifetime of the sampled electromagnetic relays was proposed and verified. A comparison of the actual and predicted lifetimes of the relays revealed a 15.4% relative error, indicating that the lifetime of electronic devices can be predicted based on their initial parameter information.

  6. Characterization of Initial Parameter Information for Lifetime Prediction of Electronic Devices.

    Directory of Open Access Journals (Sweden)

    Zhigang Li

    Full Text Available Newly manufactured electronic devices are subject to different levels of potential defects existing among the initial parameter information of the devices. In this study, a characterization of electromagnetic relays that were operated at their optimal performance with appropriate and steady parameter values was performed to estimate the levels of their potential defects and to develop a lifetime prediction model. First, the initial parameter information value and stability were quantified to measure the performance of the electronics. In particular, the values of the initial parameter information were estimated using the probability-weighted average method, whereas the stability of the parameter information was determined by using the difference between the extrema and end points of the fitting curves for the initial parameter information. Second, a lifetime prediction model for small-sized samples was proposed on the basis of both measures. Finally, a model for the relationship of the initial contact resistance and stability over the lifetime of the sampled electromagnetic relays was proposed and verified. A comparison of the actual and predicted lifetimes of the relays revealed a 15.4% relative error, indicating that the lifetime of electronic devices can be predicted based on their initial parameter information.

  7. Defects in conformal field theory

    International Nuclear Information System (INIS)

    Billò, Marco; Gonçalves, Vasco; Lauria, Edoardo; Meineri, Marco

    2016-01-01

    We discuss consequences of the breaking of conformal symmetry by a flat or spherical extended operator. We adapt the embedding formalism to the study of correlation functions of symmetric traceless tensors in the presence of the defect. Two-point functions of a bulk and a defect primary are fixed by conformal invariance up to a set of OPE coefficients, and we identify the allowed tensor structures. A correlator of two bulk primaries depends on two cross-ratios, and we study its conformal block decomposition in the case of external scalars. The Casimir equation in the defect channel reduces to a hypergeometric equation, while the bulk channel blocks are recursively determined in the light-cone limit. In the special case of a defect of codimension two, we map the Casimir equation in the bulk channel to the one of a four-point function without defect. Finally, we analyze the contact terms of the stress-tensor with the extended operator, and we deduce constraints on the CFT data. In two dimensions, we relate the displacement operator, which appears among the contact terms, to the reflection coefficient of a conformal interface, and we find unitarity bounds for the latter.

  8. Defects in conformal field theory

    Energy Technology Data Exchange (ETDEWEB)

    Billò, Marco [Dipartimento di Fisica, Università di Torino, and Istituto Nazionale di Fisica Nucleare - sezione di Torino,Via P. Giuria 1 I-10125 Torino (Italy); Gonçalves, Vasco [Centro de Física do Porto,Departamento de Física e Astronomia Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto (Portugal); ICTP South American Institute for Fundamental Research Instituto de Física Teórica,UNESP - University Estadual Paulista,Rua Dr. Bento T. Ferraz 271, 01140-070, São Paulo, SP (Brazil); Lauria, Edoardo [Institute for Theoretical Physics, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Meineri, Marco [Perimeter Institute for Theoretical Physics,Waterloo, Ontario, N2L 2Y5 (Canada); Scuola Normale Superiore, and Istituto Nazionale di Fisica Nucleare - sezione di Pisa,Piazza dei Cavalieri 7 I-56126 Pisa (Italy)

    2016-04-15

    We discuss consequences of the breaking of conformal symmetry by a flat or spherical extended operator. We adapt the embedding formalism to the study of correlation functions of symmetric traceless tensors in the presence of the defect. Two-point functions of a bulk and a defect primary are fixed by conformal invariance up to a set of OPE coefficients, and we identify the allowed tensor structures. A correlator of two bulk primaries depends on two cross-ratios, and we study its conformal block decomposition in the case of external scalars. The Casimir equation in the defect channel reduces to a hypergeometric equation, while the bulk channel blocks are recursively determined in the light-cone limit. In the special case of a defect of codimension two, we map the Casimir equation in the bulk channel to the one of a four-point function without defect. Finally, we analyze the contact terms of the stress-tensor with the extended operator, and we deduce constraints on the CFT data. In two dimensions, we relate the displacement operator, which appears among the contact terms, to the reflection coefficient of a conformal interface, and we find unitarity bounds for the latter.

  9. Production and aging of paramagnetic point defects in P-doped floating zone silicon irradiated with high fluence 27 MeV electrons

    Science.gov (United States)

    Joita, A. C.; Nistor, S. V.

    2018-04-01

    Enhancing the long term stable performance of silicon detectors used for monitoring the position and flux of the particle beams in high energy physics experiments requires a better knowledge of the nature, stability, and transformation properties of the radiation defects created over the operation time. We report the results of an electron spin resonance investigation in the nature, transformation, and long term stability of the irradiation paramagnetic point defects (IPPDs) produced by high fluence (2 × 1016 cm-2), high energy (27 MeV) electrons in n-type, P-doped standard floating zone silicon. We found out that both freshly irradiated and aged (i.e., stored after irradiation for 3.5 years at 250 K) samples mainly contain negatively charged tetravacancy and pentavacancy defects in the first case and tetravacancy defects in the second one. The fact that such small cluster vacancy defects have not been observed by irradiation with low energy (below 5 MeV) electrons, but were abundantly produced by irradiation with neutrons, strongly suggests the presence of the same mechanism of direct formation of small vacancy clusters by irradiation with neutrons and high energy, high fluence electrons, in agreement with theoretical predictions. Differences in the nature and annealing properties of the IPPDs observed between the 27 MeV electrons freshly irradiated, and irradiated and aged samples were attributed to the presence of a high concentration of divacancies in the freshly irradiated samples, defects which transform during storage at 250 K through diffusion and recombination processes.

  10. Characterization of defects situated in a fresco by stimulated infrared thermography

    Science.gov (United States)

    Candoré, J. C.; Bodnar, J. L.; Detalle, V.; Grossel, P.

    2012-01-01

    The objective of this work is to approach the possibilities of stimulated infrared thermography in dimensional characterization of defects situated in mural paintings. Towards this end, we have proceeded in two stages. Initially, we have developed, with the help of a point source photothermal analysis, an in situ measurement of the longitudinal thermal diffusivity parameter. Then, we have proceeded to the characterization of the depth of the studied defect, by means of a wide photothermal analysis and of a confrontation between theory and experiment. In this article, we present these two measurement techniques and show that the approach allows a good estimation of the depth of an inclusion of plastazote in a copy of the "Saint Christophe" of the "Campana" collection of the "Louvre Museum".

  11. Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

    Science.gov (United States)

    Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Yakimov, E. B.; Yang, Jiancheng; Ren, F.; Yang, Gwangseok; Kim, Jihyun; Kuramata, A.; Pearton, S. J.

    2018-01-01

    Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350-380 μm in unirradiated samples to 190 μm for a fluence of 1014 cm-2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga2O3 epilayers. Electron traps at Ec-0.75 eV and Ec-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.

  12. Prediction and control of pillow defect in single point incremental forming using numerical simulations

    International Nuclear Information System (INIS)

    Isidore, B. B. Lemopi; Hussain, G.; Khan, Wasim A.; Shamachi, S. Pourhassan

    2016-01-01

    Pillows formed at the center of sheets in Single point incremental forming (SPIF) are fabrication defects which adversely affect the geometrical accuracy and formability of manufactured parts. This study is focused on using FEA as a tool to predict and control pillowing in SPIF by varying tool size and shape. 3D Finite element analysis (FEA) and experiments are carried out using annealed Aluminum 1050. From FEA, it is found out that the stress/strain state in the immediate vicinity of the forming tool in the transverse direction plays a determinant role on sheet pillowing. Furthermore, pillow height increases as compression in the sheet-plane increases. The nature of in-plane stresses in the transverse direction varies from compressive to tensile as the tool-end geometry is changed from spherical to flat. Additionally, the magnitude of corresponding in-plane stresses decreases as the tool radius increases. According to measurements from the FEA model, flat end tools and large radii both retard pillow formation. However, the influence of changing tool end shape from hemispherical to flat is observed to be more important than the effect of varying tool radius, because the deformation zone remains in tension in the transverse direction while forming with flat end tools. These findings are verified by conducting a set of experiments. A fair agreement between the FEM and empirical results show that FEM can be employed as a tool to predict and control the pillow defect in SPIF.

  13. Prediction and control of pillow defect in single point incremental forming using numerical simulations

    Energy Technology Data Exchange (ETDEWEB)

    Isidore, B. B. Lemopi [Eastern Mediterranean University, Gazimagusa (Turkmenistan); Hussain, G.; Khan, Wasim A. [GIK Institute of Engineering, Swabi (Pakistan); Shamachi, S. Pourhassan [University of Minho, Guimaraes (Portugal)

    2016-05-15

    Pillows formed at the center of sheets in Single point incremental forming (SPIF) are fabrication defects which adversely affect the geometrical accuracy and formability of manufactured parts. This study is focused on using FEA as a tool to predict and control pillowing in SPIF by varying tool size and shape. 3D Finite element analysis (FEA) and experiments are carried out using annealed Aluminum 1050. From FEA, it is found out that the stress/strain state in the immediate vicinity of the forming tool in the transverse direction plays a determinant role on sheet pillowing. Furthermore, pillow height increases as compression in the sheet-plane increases. The nature of in-plane stresses in the transverse direction varies from compressive to tensile as the tool-end geometry is changed from spherical to flat. Additionally, the magnitude of corresponding in-plane stresses decreases as the tool radius increases. According to measurements from the FEA model, flat end tools and large radii both retard pillow formation. However, the influence of changing tool end shape from hemispherical to flat is observed to be more important than the effect of varying tool radius, because the deformation zone remains in tension in the transverse direction while forming with flat end tools. These findings are verified by conducting a set of experiments. A fair agreement between the FEM and empirical results show that FEM can be employed as a tool to predict and control the pillow defect in SPIF.

  14. Carbon nanotube as NEMS sensor - effect of chirality and stone-wales defect intend

    International Nuclear Information System (INIS)

    Gayathri, V; Geetha, R

    2006-01-01

    Having nanosize and unique electrical properties, carbon nanotubes (CNTs) attract lot of interest among scientific community all over the world. One of the recent observations is its role as nanosensors. Obviously the nanosize and high strength of CNT are most preferred parameter for technical and electromechanical field in the industrial point of view. The defects in CNT structure have a vital role in determining their electrical and mechanical properties. Our earlier study indicates an effective role played by the topological defects like pentagon and octagon on the electromechanical properties of these nanostructures. Here our aim is to look in to the effect of Stone-wales defect and chirality on this property of nanotubes deformed under applied pressure. Among the three kinds of tubes considered for this study, we observed that armchair (5, 5) tube is more suitable for sensor applications

  15. Study by electronic structure calculations of the radiation damage in the UO2 nuclear fuel: behaviour of the point defects and fission gases

    International Nuclear Information System (INIS)

    Vathonne, Emerson

    2014-01-01

    Uranium dioxide (UO 2 ) is worldwide the most widely used fuel in nuclear plants in the world and in particular in pressurized water reactors (PWR). In-pile the fission of uranium nuclei creates fission products and point defects in the fuel. The understanding of the evolution of these radiation damages requires a multi-scale modelling approach of the nuclear fuel, from the scale of the pellet to the atomic scale. We used an electronic structure calculation method based on the density functional theory (DFT) to model radiation damage in UO 2 at the atomic scale. A Hubbard-type Coulomb interaction term is added to the standard DFT formalism to take into account the strong correlations of the 5f electrons in UO 2 . This method is used to study point defects with various charge states and the incorporation and diffusion of krypton in uranium dioxide. This study allowed us to obtain essential data for higher scale models but also to interpret experimental results. In parallel of this study, three ways to improve the state of the art of electronic structure calculations of UO 2 have been explored: the consideration of the spin-orbit coupling neglected in current point defect calculations, the application of functionals allowing one to take into account the non-local interactions such as van der Waals interactions important for rare gases and the use of the Dynamical Mean Field Theory combined to the DFT method in order to take into account the dynamical effects in the 5f electron correlations. (author) [fr

  16. Point defects induced in LiF by low energy electrons

    Energy Technology Data Exchange (ETDEWEB)

    Baldacchini, Giuseppe; Montereali, Rosa Maria [ENEA, Centro Ricerche Frascati, Rome (Italy); Scacco, Augusto [Rome, Univ. (Italy). Dipt. di Fisica]|[INFM, Rome (Italy); Cremona, Marco; D`Auria, Giuliano

    1997-09-01

    A systematic study of the coloring of LiF crystals and films irradiated by 3 keV electrons at various temperatures was carried out analysing their absorption and luminescence spectra. The three stage behaviour of the F coloring curve as a function of the irradiation dose was revealed and the saturation of the process was identified for the first time with this kind of radiation. The kinetics of the defect formation confirmed the expectations derived from the most comprehensive theoretical model developed to explain the coloring process. The irradiation temperature was found to have an influence on both the proportion of different defects created and on their stability and the overall coloring efficiency turned out to be higher when the irradiation was performed on films. Various explanations to these observations are put forward and discussed.

  17. Point defects induced in LiF by low energy electrons

    International Nuclear Information System (INIS)

    Baldacchini, Giuseppe; Montereali, Rosa Maria; Scacco, Augusto; Cremona, Marco; D'Auria, Giuliano.

    1997-09-01

    A systematic study of the coloring of LiF crystals and films irradiated by 3 keV electrons at various temperatures was carried out analysing their absorption and luminescence spectra. The three stage behaviour of the F coloring curve as a function of the irradiation dose was revealed and the saturation of the process was identified for the first time with this kind of radiation. The kinetics of the defect formation confirmed the expectations derived from the most comprehensive theoretical model developed to explain the coloring process. The irradiation temperature was found to have an influence on both the proportion of different defects created and on their stability and the overall coloring efficiency turned out to be higher when the irradiation was performed on films. Various explanations to these observations are put forward and discussed

  18. Effect of uniaxial stress on the electrochemical properties of graphene with point defects

    Science.gov (United States)

    Szroeder, Paweł; Sagalianov, Igor Yu.; Radchenko, Taras M.; Tatarenko, Valentyn A.; Prylutskyy, Yuriy I.; Strupiński, Włodzimierz

    2018-06-01

    We report a calculational study of electron states and the resulting electrochemical properties of uniaxially strained graphene with point defects. For this study the reduction of ferricyanide to ferrocyanide serves as a benchmark electrochemical reaction. We find that the heterogeneous electron transfer activity of the perfect graphene electrode rises under uniaxial strain. However, evolution of the cathodic reaction rate depends on the direction of strain. For moderate lattice deformations, the zigzag strain improves electrochemical performance better than the armchair strain. Standard rate constant increases by 50% at the zigzag strain of 10%. Vacancies, covalently bonded moieties, charged adatoms and substitutional impurities in the zigzag strained graphene induce changes in the shape of the curve of the cathodic reaction rate. However, this changes do not translate into the electrocatalytic activity. Vacancies and covalently bonded moieties at concentration of 0.1% do not affect the electrochemical performance. Charged adatoms and substitutional impurities give a slight increase in the standard rate constant by, respectively, 2.2% and 3.4%.

  19. Evolution of native point defects in ZnO bulk probed by positron annihilation spectroscopy

    Science.gov (United States)

    Peng, Cheng-Xiao; Wang, Ke-Fan; Zhang, Yang; Guo, Feng-Li; Weng, Hui-Min; Ye, Bang-Jiao

    2009-05-01

    This paper studies the evolution of native point defects with temperature in ZnO single crystals by positron lifetime and coincidence Doppler broadening (CDB) spectroscopy, combined with the calculated results of positron lifetime and electron momentum distribution. The calculated and experimental results of the positron lifetime in ZnO bulk ensure the presence of zinc monovacancy, and zinc monovacancy concentration begins to decrease above 600 °C annealing treatment. CDB is an effective method to distinguish the elemental species, here we combine this technique with calculated electron momentum distribution to determine the oxygen vacancies, which do not trap positrons due to their positive charge. The CDB spectra show that oxygen vacancies do not appear until 600 °C annealing treatment, and increase with the increase of annealing temperature. This study supports the idea that green luminescence has a close relation with oxygen vacancies.

  20. Evolution of native point defects in ZnO bulk probed by positron annihilation spectroscopy

    International Nuclear Information System (INIS)

    Cheng-Xiao, Peng; Ke-Fan, Wang; Yang, Zhang; Feng-Li, Guo; Hui-Min, Weng; Bang-Jiao, Ye

    2009-01-01

    This paper studies the evolution of native point defects with temperature in ZnO single crystals by positron lifetime and coincidence Doppler broadening (CDB) spectroscopy, combined with the calculated results of positron lifetime and electron momentum distribution. The calculated and experimental results of the positron lifetime in ZnO bulk ensure the presence of zinc monovacancy, and zinc monovacancy concentration begins to decrease above 600 °C annealing treatment. CDB is an effective method to distinguish the elemental species, here we combine this technique with calculated electron momentum distribution to determine the oxygen vacancies, which do not trap positrons due to their positive charge. The CDB spectra show that oxygen vacancies do not appear until 600 °C annealing treatment, and increase with the increase of annealing temperature. This study supports the idea that green luminescence has a close relation with oxygen vacancies

  1. Properties of point defects either native or induced by irradiation in the 3C and 6H polytypes of silicon carbide determined by positron annihilation and EPR

    International Nuclear Information System (INIS)

    Kerbiriou, X.

    2006-02-01

    Potential applications of silicon carbide (SiC) in micro-electronics have justified many studies on point defects, which play an important role in the electrical compensation. Moreover, this material has many assets to take part in the fissile materials confining in the gas cooled reactors of the future (4. generation). In this thesis, we have used Electronic Paramagnetic Resonance and Positron Annihilation Spectroscopy to study the properties of point defects (nature, size, charge state, migration and agglomeration during annealing), either native or induced by irradiation with various particles (H + , e - , carbon ions), in the 3C and 6H polytypes of SiC. The positron annihilation study of native defects in 6H-SiC has shown the presence of a strong concentration of non-vacancy traps of acceptor type, which are not present in the 3C-SiC crystals. The nature of the defects detected after irradiation with low energy electrons (190 keV) depends on the polytype. Indeed, while silicon Frenkel pairs and carbon mono-vacancies are detected in the 6H crystals, only carbon mono-vacancies are detected in the 3C crystals. We propose that these differences concerning the populations of detected point defects result from different values of the silicon displacement threshold energy for the two polytypes (approximately 20 eV for 6H and 25 V for 3C). In addition, the irradiations with 12 MeV protons and 132 MeV carbon ions have created silicon mono-vacancies as well as VSi-VC di-vacancies. Neither the particle (protons or ions carbon), nor the polytype (3C or 6H) influence the nature of the generated defects. Finally the study of the annealing of 6H-SiC monocrystals irradiated with 12 MeV protons have revealed several successive processes. The most original result is the agglomeration of the silicon mono-vacancies with the VSi-VC di-vacancies which leads to the formation of VSi-VC-VSi tri-vacancies. (author)

  2. Critical parameters controlling irradiation swelling in beryllium

    International Nuclear Information System (INIS)

    Dubinko, V.I.

    1995-01-01

    Radiation effects in beryllium can hardly be explained within a framework of the conventional theory based on the bias concept due to elastic interaction difference (EID) between vacancies and self-interstitial atoms (SIAs) since beryllium belongs to hexagonal close-packed metals where diffusion has been shown to be anisotropic. Diffusional anisotropy difference (DAD) between point defects changes the cavity bias for their absorption and leads to dependence of the dislocation bias on the distribution of dislocations over crystallographic directions. On the other hand, the elastic interaction between point defects and cavities gives rise to the size and gas pressure dependencies of the cavity bias, resulting in new critical quantities for bubble-void transition effects at low temperature irradiation. In the present paper, we develop the concept of the critical parameters controlling irradiation swelling with account of both DAD and EID, and take care of thermal effects as well since they are of major importance for beryllium which has an anomalously low self-diffusion activation energy. Experimental data on beryllium swelling are analyzed on the basis of the present theory. (orig.)

  3. Graphene Dirac point tuned by ferroelectric polarization field

    Science.gov (United States)

    Wang, Xudong; Chen, Yan; Wu, Guangjian; Wang, Jianlu; Tian, Bobo; Sun, Shuo; Shen, Hong; Lin, Tie; Hu, Weida; Kang, Tingting; Tang, Minghua; Xiao, Yongguang; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

    2018-04-01

    Graphene has received numerous attention for future nanoelectronics and optoelectronics. The Dirac point is a key parameter of graphene that provides information about its carrier properties. There are lots of methods to tune the Dirac point of graphene, such as chemical doping, impurities, defects, and disorder. In this study, we report a different approach to tune the Dirac point of graphene using a ferroelectric polarization field. The Dirac point can be adjusted to near the ferroelectric coercive voltage regardless its original position. We have ensured this phenomenon by temperature-dependent experiments, and analyzed its mechanism with the theory of impurity correlation in graphene. Additionally, with the modulation of ferroelectric polymer, the current on/off ratio and mobility of graphene transistor both have been improved. This work provides an effective method to tune the Dirac point of graphene, which can be readily used to configure functional devices such as p-n junctions and inverters.

  4. Technical Report: Correlation Between the Repair of Cartilage and Subchondral Bone in an Osteochondral Defect Using Bilayered, Biodegradable Hydrogel Composites.

    Science.gov (United States)

    Lu, Steven; Lam, Johnny; Trachtenberg, Jordan E; Lee, Esther J; Seyednejad, Hajar; van den Beucken, Jeroen J J P; Tabata, Yasuhiko; Kasper, F Kurtis; Scott, David W; Wong, Mark E; Jansen, John A; Mikos, Antonios G

    2015-12-01

    The present work investigated correlations between cartilage and subchondral bone repair, facilitated by a growth factor-delivering scaffold, in a rabbit osteochondral defect model. Histological scoring indices and microcomputed tomography morphological parameters were used to evaluate cartilage and bone repair, respectively, at 6 and 12 weeks. Correlation analysis revealed significant associations between specific cartilage indices and subchondral bone parameters that varied with location in the defect (cortical vs. trabecular region), time point (6 vs. 12 weeks), and experimental group (insulin-like growth factor-1 only, bone morphogenetic protein-2 only, or both growth factors). In particular, significant correlations consistently existed between cartilage surface regularity and bone quantity parameters. Overall, correlation analysis between cartilage and bone repair provided a fuller understanding of osteochondral repair and can help drive informed studies for future osteochondral regeneration strategies.

  5. Diagnosis of Soft Spot Short Defects in Analog Circuits Considering the Thermal Behaviour of the Chip

    Directory of Open Access Journals (Sweden)

    Tadeusiewicz Michał

    2016-06-01

    Full Text Available The paper deals with fault diagnosis of nonlinear analogue integrated circuits. Soft spot short defects are analysed taking into account variations of the circuit parameters due to physical imperfections as well as self-heating of the chip. A method enabling to detect, locate and estimate the value of a spot defect has been developed. For this purpose an appropriate objective function was minimized using an optimization procedure based on the Fibonacci method. The proposed approach exploits DC measurements in the test phase, performed at a limited number of accessible points. For illustration three numerical examples are given.

  6. Topological defect formation in rotating binary dipolar Bose–Einstein condensate

    International Nuclear Information System (INIS)

    Zhang, Xiao-Fei; Han, Wei; Jiang, Hai-Feng; Liu, Wu-Ming; Saito, Hiroki; Zhang, Shou-Gang

    2016-01-01

    We investigate the topological defects and spin structures of a rotating binary Bose–Einstein condensate, which consists of both dipolar and scalar bosonic atoms confined in spin-dependent optical lattices, for an arbitrary orientation of the dipoles with respect to their plane of motion. Our results show that the tunable dipolar interaction, especially the orientation of the dipoles, can be used to control the direction of stripe phase and its related half-vortex sheets. In addition, it can also be used to obtain a regular arrangement of various topological spin textures, such as meron, circular and cross disgyration spin structures. We point out that such topological defects and regular arrangement of spin structures arise primarily from the long-range and anisotropic nature of dipolar interaction and its competition with the spin-dependent optical lattices and rotation. - Highlights: • Effects of both strength and orientation of the dipoles are discussed. • Various topological defects can be formed in different parameter regions. • Present one possible way to obtain regular arrangements of spin textures.

  7. Nature and strength of defect interactions in cubic stabilized zirconia

    International Nuclear Information System (INIS)

    Bogicevic, A.; Wolverton, C.

    2003-01-01

    The intrinsic ordering tendencies that limit ionic conduction in doped zirconia electrolytes are fully elucidated using first-principles calculations. A detailed analysis of nearly 300 yttria- and scandia-stabilized cubic-zirconia-ordered vacancy compounds reveals a delicate balance between competing elastic and electrostatic interactions. These results explain several outstanding experimental observations and provide substantial insight needed for improving ionic conduction and enabling low-temperature operation of zirconia-based electrolytes. We show that the surprising vacancy ordering in dilute solid solutions is a consequence of repulsive electrostatic and attractive elastic interactions that balance at third-neighbor vacancy separations. In contrast, repulsive elastic vacancy-dopant interactions prevail over electrostatic attraction at all probed defect separations in YSZ and lead to very weak ordering preferences in ScSZ. The total electronic contribution to the defect interactions is shown to be strongly dominated by simple point-charge electrostatics, leaving speciation of defect ordering for a given class of aliovalent dopants to the elastic term. Thus, ion size becomes a critical parameter in controlling the ionic conductivity of doped oxide electrolytes

  8. Ultrasonic defect characterization using parametric-manifold mapping

    Science.gov (United States)

    Velichko, A.; Bai, L.; Drinkwater, B. W.

    2017-06-01

    The aim of ultrasonic non-destructive evaluation includes the detection and characterization of defects, and an understanding of the nature of defects is essential for the assessment of structural integrity in safety critical systems. In general, the defect characterization challenge involves an estimation of defect parameters from measured data. In this paper, we explore the extent to which defects can be characterized by their ultrasonic scattering behaviour. Given a number of ultrasonic measurements, we show that characterization information can be extracted by projecting the measurement onto a parametric manifold in principal component space. We show that this manifold represents the entirety of the characterization information available from far-field harmonic ultrasound. We seek to understand the nature of this information and hence provide definitive statements on the defect characterization performance that is, in principle, extractable from typical measurement scenarios. In experiments, the characterization problem of surface-breaking cracks and the more general problem of elliptical voids are studied, and a good agreement is achieved between the actual parameter values and the characterization results. The nature of the parametric manifold enables us to explain and quantify why some defects are relatively easy to characterize, whereas others are inherently challenging.

  9. Elastic interaction energies of defect structures

    International Nuclear Information System (INIS)

    Seitz, E.; de Fontaine, D.

    1976-01-01

    The elastic strain energy between point defects and small disk-shaped clusters of defects are calculated to determine stable configurations. A distortion tensor of tetragonal symmetry is assigned to each impurity atom. The tetragonality ratio t is varied to cover needle-type (t greater than 1), spherical (t = 1) and disk-type (t less than 0) strain fields. To vary the elastic properties of the host material, Fe, Cu, Al, and V were chosen as examples. Computer calculations are based on the microscopic theory of elasticity which emphasizes calculations in discrete Fourier space. Pairs of point defects order along [001] for t less than 1 and along (001) for t = 1 for all host elements. For t greater than 1 fcc lattices and bcc lattices behave differently. It is shown that only certain three dimensional periodic arrangements of parallel and perpendicular disk-like defect clusters are realized for given tetragonality ratio t and host element

  10. Order parameter fluctuations at a critical point - an exact result about percolation -

    International Nuclear Information System (INIS)

    Botet, Robert

    2011-01-01

    The order parameter of the system in the critical state, is expected to undergo large non-Gaussian fluctuations. However, almost nothing is known about the mathematical forms of the possible probability distributions of the order parameter. A remarkable exception is the site-percolation on the Bethe lattice, for which the complete order-parameter distribution has been recently derived at the critical point. Surprisingly, it appears to be the Kolmogorov-Smirnov distribution, well known in very different areas of mathematical statistics. In the present paper, we explain first how this special distribution could appear naturally in the context of the critical systems, under the assumption (still virtually unstudied) of the exponential distribution of the number of domains of a given size. In a second part, we present for the first time the complete derivation of the order-parameter distribution for the critical percolation model on the Bethe lattice, thus completing a recent publication announcing this result.

  11. Passivity of AISI 321 stainless steel in 0.5 M H2SO4 solution studied by Mott–Schottky analysis in conjunction with the point defect model

    Directory of Open Access Journals (Sweden)

    A. Fattah-alhosseini

    2016-11-01

    Full Text Available The passivity of AISI 321 stainless steel in 0.5 M H2SO4 solution, in the steady-state condition, has been explored using electrochemical impedance spectroscopy (EIS and Mott–Schottky analysis. Based on the Mott–Schottky analysis in conjunction with the point defect model (PDM, it was shown that the calculated donor density decreases exponentially with increasing passive film formation potential. The thickness of the passive film was increased linearly with the formation potential. These observations were consistent with the predictions of the PDM, noting that the point defects within the passive film are metal interstitials, oxygen vacancies, or both.

  12. Characterization of the structure and chemistry of defects in materials

    International Nuclear Information System (INIS)

    Larson, B.C.; Ruehle, M.; Seidman, D.N.

    1988-01-01

    Research programs, presented at the materials research symposium, on defects in materials are presented. Major areas include: point defects, defect aggregates, and ordering; defects in non-metals and semiconductors; atomic resolution imaging of defects; and gain boundaries, interfaces, and layered materials. Individual projects are processed separately for the data bases

  13. Monte-Carlo simulation of the evolution of point defects in solids under non-equilibrium conditions

    International Nuclear Information System (INIS)

    Maurice, Francoise; Doan, N.V.

    1981-11-01

    This report was written in order to serve as a guide for courageous users who want to tackle the problem of the evolution of point defect populations in a solid under non-equilibrium conditions by the Monte-Carlo technique. The original program, developed by Lanore in her swelling investigations on solids under irradiation by different particles, was generalized in order to take into account the effects and the phenomena related to the presence of solute atoms. Detailed descriptions of the simulation model, computational procedures and formulae used in the calculations are given. Two examples are shown to illustrate the applications to the swelling phenomenon: first, the effect to temperature or dose rate changes on void-swelling in electron-irradiated copper; second, the influence of solute atoms on the void nucleation in electron-irradiated nickel [fr

  14. Curvature-Controlled Topological Defects

    Directory of Open Access Journals (Sweden)

    Luka Mesarec

    2017-05-01

    Full Text Available Effectively, two-dimensional (2D closed films exhibiting in-plane orientational ordering (ordered shells might be instrumental for the realization of scaled crystals. In them, ordered shells are expected to play the role of atoms. Furthermore, topological defects (TDs within them would determine their valence. Namely, bonding among shells within an isotropic liquid matrix could be established via appropriate nano-binders (i.e., linkers which tend to be attached to the cores of TDs exploiting the defect core replacement mechanism. Consequently, by varying configurations of TDs one could nucleate growth of scaled crystals displaying different symmetries. For this purpose, it is of interest to develop a simple and robust mechanism via which one could control the position and number of TDs in such atoms. In this paper, we use a minimal mesoscopic model, where variational parameters are the 2D curvature tensor and the 2D orientational tensor order parameter. We demonstrate numerically the efficiency of the effective topological defect cancellation mechanism to predict positional assembling of TDs in ordered films characterized by spatially nonhomogeneous Gaussian curvature. Furthermore, we show how one could efficiently switch among qualitatively different structures by using a relative volume v of ordered shells, which represents a relatively simple naturally accessible control parameter.

  15. An optimization method for defects reduction in fiber laser keyhole welding

    Science.gov (United States)

    Ai, Yuewei; Jiang, Ping; Shao, Xinyu; Wang, Chunming; Li, Peigen; Mi, Gaoyang; Liu, Yang; Liu, Wei

    2016-01-01

    Laser welding has been widely used in automotive, power, chemical, nuclear and aerospace industries. The quality of welded joints is closely related to the existing defects which are primarily determined by the welding process parameters. This paper proposes a defects optimization method that takes the formation mechanism of welding defects and weld geometric features into consideration. The analysis of welding defects formation mechanism aims to investigate the relationship between welding defects and process parameters, and weld features are considered to identify the optimal process parameters for the desired welded joints with minimum defects. The improved back-propagation neural network possessing good modeling for nonlinear problems is adopted to establish the mathematical model and the obtained model is solved by genetic algorithm. The proposed method is validated by macroweld profile, microstructure and microhardness in the confirmation tests. The results show that the proposed method is effective at reducing welding defects and obtaining high-quality joints for fiber laser keyhole welding in practical production.

  16. Study of defect characteristics essential for NDT testing methods ET, UT and RT

    International Nuclear Information System (INIS)

    Wirdelius, H.; Oesterberg, Elena

    2000-10-01

    This paper presents results from a literature review of defect characteristics essential for nondestructive testing (NDT). Most of the major NDT methods are included in the study - ultrasonic testing (UT), radiography (RT) and eddy current testing (ET). The study was performed by means of searching in scientific databases, technical journals, conference proceedings etc. Mainly the following databases were used: CHANS (Chalmers database), INSPEC, NTIS, Ei Compendex, World Surface Coating Abs, METADEX, JICST-Eplus, Aerospace database, Pascal, Eng Materials, SciSearch and Weldasearch. It is concluded that for eddy current testing, the defect geometry, the defect size and the defect orientation influence the outcome signal. A number of investigations address the relationships between the defect parameters like defect depth, length and width and the outcome signal parameters like amplitude, phase and signal shape. Also the phenomena of the electrical contacts between the defect surfaces (for a crack) was studied. Defect parameters that are essential to the quality of ultrasonic testing are defect position in the object (includes the depth), orientation, size, crack surface roughness, closure and tip radius. This investigation has been focused on those parameters that are not that easy to reconstruct and only briefly discussed the influence on the signal response due to defect position, orientation and size. When it comes to radiographic techniques, the most important defect related parameters that influence the quality are the difference in radio opacity of the specimen and defect and the angle between the volumetric extension of the defect and the direction of projection. The defect gape and the morphology of the crack are also very essential parameters. A very simple model of the detectability as a function of depth, width and misorientation (angle to the radiation beam) has been validated and to some extent also verified in a number of papers. Even for defects with

  17. Depth profiles of defects in Ar-iondashirradiated steels determined by a least-squares fit of S parameters from variable-energy positron annihilation

    Science.gov (United States)

    Aruga, Takeo; Takamura, Saburo; Nakata, Kiyotomo; Ito, Yasuo

    1995-01-01

    Using a new method for reconstructing the depth profile of defects in an iondashirradiated sample by using slow positrons, the depth profiles of vacancy-type defects in 316 stainless steel samples, irradiated with 250 keV Ar ions to a dose of 7.5 × 10 19 m -2 at room temperature, have been calculated from Doppler-broadening S parameters measured as a function of positron energies up to 16 keV. Without assuming any type of shape for the defect profiles, such as Gaussian, the defect profiling is done using a least-squares fitting method. The resulting profile suggests that in as-irradiated 316 stainless steel samples with lower carbon content, the defect distribution peaks at a depth four times larger than that of the ion range. After annealing at a high temperature of 1253 K for 0.5 h, the fitted profile shows that the peak around the average ion range is highly enhanced. While in the steel added with 0.3 wt% titanium, the profile exhibits almost no peak after annealing at 1073 K. The results indicate that the radiationdashproduced vacancy clusters are stabilized by the implanted Ar atoms more effectively in the Ti-free steel than in the Ti-added steel.

  18. Point defects in the 1 T' and 2 H phases of single-layer MoS2: A comparative first-principles study

    Science.gov (United States)

    Pizzochero, Michele; Yazyev, Oleg V.

    2017-12-01

    The metastable 1 T' phase of layered transition metal dichalcogenides has recently attracted considerable interest due to electronic properties, possible topological phases, and catalytic activity. We report a comprehensive theoretical investigation of intrinsic point defects in the 1 T' crystalline phase of single-layer molybdenum disulfide (1 T'-MoS2 ) and provide comparison to the well-studied semiconducting 2 H phase. Based on density functional theory calculations, we explore a large number of configurations of vacancy, adatom, and antisite defects and analyze their atomic structure, thermodynamic stability, and electronic and magnetic properties. The emerging picture suggests that, under thermodynamic equilibrium, 1 T'-MoS2 is more prone to hosting lattice imperfections than the 2 H phase. More specifically, our findings reveal that the S atoms that are closer to the Mo atomic plane are the most reactive sites. Similarly to the 2 H phase, S vacancies and adatoms in 1 T'-MoS2 are very likely to occur while Mo adatoms and antisites induce local magnetic moments. Contrary to the 2 H phase, Mo vacancies in 1 T'-MoS2 are expected to be an abundant defect due to the structural relaxation that plays a major role in lowering the defect formation energy. Overall, our study predicts that the realization of high-quality flakes of 1 T'-MoS2 should be carried out under very careful laboratory conditions but at the same time the facile defects introduction can be exploited to tailor physical and chemical properties of this polymorph.

  19. Probabilistic analysis of glass elements with three-parameter Weibull distribution

    International Nuclear Information System (INIS)

    Ramos, A.; Muniz-Calvente, M.; Fernandez, P.; Fernandez Cantel, A.; Lamela, M. J.

    2015-01-01

    Glass and ceramics present a brittle behaviour so a large scatter in the test results is obtained. This dispersion is mainly due to the inevitable presence of micro-cracks on its surface, edge defects or internal defects, which must be taken into account using an appropriate failure criteria non-deterministic but probabilistic. Among the existing probability distributions, the two or three parameter Weibull distribution is generally used in adjusting material resistance results, although the method of use thereof is not always correct. Firstly, in this work, the results of a large experimental programme using annealed glass specimens of different dimensions based on four-point bending and coaxial double ring tests was performed. Then, the finite element models made for each type of test, the adjustment of the parameters of the three-parameter Weibull distribution function (cdf) (λ: location, β: shape, d: scale) for a certain failure criterion and the calculation of the effective areas from the cumulative distribution function are presented. Summarizing, this work aims to generalize the use of the three-parameter Weibull function in structural glass elements with stress distributions not analytically described, allowing to apply the probabilistic model proposed in general loading distributions. (Author)

  20. Failure Pressure Estimates of Steam Generator Tubes Containing Wear-type Defects

    International Nuclear Information System (INIS)

    Yoon-Suk Chang; Jong-Min Kim; Nam-Su Huh; Young-Jin Kim; Seong Sik Hwang; Joung-Soo Kim

    2006-01-01

    It is commonly requested that steam generator tubes with defects exceeding 40% of wall thickness in depth should be plugged to sustain all postulated loads with appropriate margin. The critical defect dimensions have been determined based on the concept of plastic instability. This criterion, however, is known to be too conservative for some locations and types of defects. In this context, the accurate failure estimation for steam generator tubes with a defect draws increasing attention. Although several guidelines have been developed and are used for assessing the integrity of defected tubes, most of these guidelines are related to stress corrosion cracking or wall-thinning phenomena. As some of steam generator tubes are also failed due to fretting and so on, alternative failure estimation schemes for relevant defects are required. In this paper, three-dimensional finite element (FE) analyses are carried out under internal pressure condition to simulate the failure behavior of steam generator tubes with different defect configurations; elliptical wastage type, wear scar type and rectangular wastage type defects. Maximum pressures based on material strengths are obtained from more than a hundred FE results to predict the failure of the steam generator tube. After investigating the effect of key parameters such as wastage depth, wastage length and wrap angle, simplified failure estimation equations are proposed in relation to the equivalent stress at the deepest point in wastage region. Comparison of failure pressures predicted according to the proposed estimation scheme with some corresponding burst test data shows good agreement, which provides a confidence in the use of the proposed equations to assess the integrity of steam generator tubes with wear-type defects. (authors)

  1. Immersion lithography defectivity analysis at DUV inspection wavelength

    Science.gov (United States)

    Golan, E.; Meshulach, D.; Raccah, N.; Yeo, J. Ho.; Dassa, O.; Brandl, S.; Schwarz, C.; Pierson, B.; Montgomery, W.

    2007-03-01

    Significant effort has been directed in recent years towards the realization of immersion lithography at 193nm wavelength. Immersion lithography is likely a key enabling technology for the production of critical layers for 45nm and 32nm design rule (DR) devices. In spite of the significant progress in immersion lithography technology, there remain several key technology issues, with a critical issue of immersion lithography process induced defects. The benefits of the optical resolution and depth of focus, made possible by immersion lithography, are well understood. Yet, these benefits cannot come at the expense of increased defect counts and decreased production yield. Understanding the impact of the immersion lithography process parameters on wafer defects formation and defect counts, together with the ability to monitor, control and minimize the defect counts down to acceptable levels is imperative for successful introduction of immersion lithography for production of advanced DR's. In this report, we present experimental results of immersion lithography defectivity analysis focused on topcoat layer thickness parameters and resist bake temperatures. Wafers were exposed on the 1150i-α-immersion scanner and 1200B Scanner (ASML), defect inspection was performed using a DUV inspection tool (UVision TM, Applied Materials). Higher sensitivity was demonstrated at DUV through detection of small defects not detected at the visible wavelength, indicating on the potential high sensitivity benefits of DUV inspection for this layer. The analysis indicates that certain types of defects are associated with different immersion process parameters. This type of analysis at DUV wavelengths would enable the optimization of immersion lithography processes, thus enabling the qualification of immersion processes for volume production.

  2. The relationship between the hardness and the point-defect-density in neutron-irradiated MgO·3.0Al2O3 and AlN

    International Nuclear Information System (INIS)

    Suematsu, H.; Yatsui, K.; Yano, T.

    2001-01-01

    MgO·3.0Al 2 O 3 single crystals and sintered AlN polycrystals were irradiated with fast neutrons in various conditions and the hardness of the irradiated and unirradiated samples was measured with a Vickers hardness tester. The hardness of as-irradiated MgO·3.0Al 2 O 3 and AlN samples increased by 23 and 51%, respectively. After isochronal annealing, the hardness gradually decreased and mostly recovered to that of the unirradiated one up to 1400degC. Volume of the sample also increased after the irradiation and changed in the same way as the hardness by annealing. A relationship between the hardness and the density of point defects is proposed and the experimental results agree with the relationship. It implies that the point defects generated by the irradiation pin down dislocations and increase the hardness of neutron irradiated MgO·3.0Al 2 O 3 samples. (author)

  3. Nucleation of voids and other irradiation-produced defect aggregates

    International Nuclear Information System (INIS)

    Wiedersich, H.; Katz, J.L.

    1976-01-01

    The nucleation of defect clusters in crystalline solids from radiation-produced defects is different from the usual nucleation processes in one important aspect: the condensing defects, interstitial atoms and vacancies, can mutually annihilate and are thus similar to matter and antimatter. The nucleation process is described as the simultaneous reaction of vacancies and interstitials (and gas atoms if present) with embryos of all sizes. The reaction rates for acquisition of point defects (and gas atoms) are calculated from their respective jump frequencies and concentrations in the supersaturated system. The reaction rates for emission of point defects are derived from the free energies of the defect clusters in the thermodynamic equilibrium system, i.e., the system without excess point defects. This procedure differs from that used in conventional nucleation theory and permits the inclusion of the ''antimatter'' defect into the set of reaction-rate equations in a straightforward manner. The method is applied to steady-state nucleation, during irradiation, of both dislocation loops and voids in the absence and in the presence of immobile and mobile gas. The predictions of the nucleation theory are shown to be in qualitative agreement with experimental observations, e.g., void densities increase with increasing displacement rates; gases such as helium enhance void nucleation; at low displacement rates and at high temperatures the presence of gas is essential to void formation. For quantitative predictions, the theory must be extended to include the termination of nucleation

  4. On the interplay between phonon-boundary scattering and phonon-point-defect scattering in SiGe thin films

    Science.gov (United States)

    Iskandar, A.; Abou-Khalil, A.; Kazan, M.; Kassem, W.; Volz, S.

    2015-03-01

    This paper provides theoretical understanding of the interplay between the scattering of phonons by the boundaries and point-defects in SiGe thin films. It also provides a tool for the design of SiGe-based high-efficiency thermoelectric devices. The contributions of the alloy composition, grain size, and film thickness to the phonon scattering rate are described by a model for the thermal conductivity based on the single-mode relaxation time approximation. The exact Boltzmann equation including spatial dependence of phonon distribution function is solved to yield an expression for the rate at which phonons scatter by the thin film boundaries in the presence of the other phonon scattering mechanisms. The rates at which phonons scatter via normal and resistive three-phonon processes are calculated by using perturbation theories with taking into account dispersion of confined acoustic phonons in a two dimensional structure. The vibrational parameters of the model are deduced from the dispersion of confined acoustic phonons as functions of temperature and crystallographic direction. The accuracy of the model is demonstrated with reference to recent experimental investigations regarding the thermal conductivity of single-crystal and polycrystalline SiGe films. The paper describes the strength of each of the phonon scattering mechanisms in the full temperature range. Furthermore, it predicts the alloy composition and film thickness that lead to minimum thermal conductivity in a single-crystal SiGe film, and the alloy composition and grain size that lead to minimum thermal conductivity in a polycrystalline SiGe film.

  5. Positron analysis of defects in metals

    NARCIS (Netherlands)

    van Veen, A.; Kruseman, A.C.; Schut, H.; Mijnarends, P.E.; Kooi, B.J.; de Hosson, J.T.M.; Jean, YC; Eldrup, M; Schrader, DM; West, RN

    1997-01-01

    New methods are discussed to improve defect analysis. The first method employs mapping of two shape parameters, S and W, of the positron annihilation photopeak. It is demonstrated that the combined use of S and W allows to a better discrimination of defects. The other method is based on background

  6. Quantum computing with defects

    Science.gov (United States)

    Varley, Joel

    2011-03-01

    The development of a quantum computer is contingent upon the identification and design of systems for use as qubits, the basic units of quantum information. One of the most promising candidates consists of a defect in diamond known as the nitrogen-vacancy (NV-1) center, since it is an individually-addressable quantum system that can be initialized, manipulated, and measured with high fidelity at room temperature. While the success of the NV-1 stems from its nature as a localized ``deep-center'' point defect, no systematic effort has been made to identify other defects that might behave in a similar way. We provide guidelines for identifying other defect centers with similar properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate systems. To elucidate these points, we compare electronic structure calculations of the NV-1 center in diamond with those of several deep centers in 4H silicon carbide (SiC). Using hybrid functionals, we report formation energies, configuration-coordinate diagrams, and defect-level diagrams to compare and contrast the properties of these defects. We find that the NC VSi - 1 center in SiC, a structural analog of the NV-1 center in diamond, may be a suitable center with very different optical transition energies. We also discuss how the proposed criteria can be translated into guidelines to discover NV analogs in other tetrahedrally coordinated materials. This work was performed in collaboration with J. R. Weber, W. F. Koehl, B. B. Buckley, A. Janotti, C. G. Van de Walle, and D. D. Awschalom. This work was supported by ARO, AFOSR, and NSF.

  7. Role of point defects and additives in kinetics of hydrogen storage materials

    Science.gov (United States)

    van de Walle, Chris

    2010-03-01

    First-principles computational studies of hydrogen interactions with storage materials can provide direct insight into the processes of H uptake and release, and may help in developing guidelines for designing storage media with improved storage capacity and kinetics. One important conclusion is that the defects involved in kinetics of semiconducting or insulating H-storage materials are charged, and hence their formation energy is Fermi-level dependent and can be affected by the presence of impurities that change the Fermi level [1,2]. This provides an explanation for the role played by transition-metal impurities in the kinetics of NaAlH4 and related materials. Desorption of H and decomposition of NaAlH4 requires not only mass transport of H but also of Al and/or Na. This process is mediated by native defects. We have investigated the structure, stability, and migration enthalpy of native defects based on density functional theory. The results allow us to estimate diffusion activation energies for the defects that may be involved in mass transport. Most of the relevant defects exist in charge states other than neutral, and consideration of these charge states is essential for a proper description of kinetics. We propose specific new mechanisms to explain the observed activation energies and their dependence on the presence of impurities. We have also expanded our studies to materials other than NaAlH4. In the case of LiBH4 and Li4BN3H10 we have found that the calculations have predictive power in terms of identifying which impurities will actually enhance kinetics. Other complex hydrides that we are currently investigating include Li2NH and LiNH2. [4pt] [1] A. Peles and C. G. Van de Walle, Phys. Rev. B 76, 214101 (2007). [0pt] [2] C. G. Van de Walle, A. Peles, A. Janotti, and G. B. Wilson-Short, Physica B 404, 793 (2009).

  8. Defect Characterization of Pyroelectric Materials

    National Research Council Canada - National Science Library

    Keeble, David

    2002-01-01

    Two methods for identify point defects applicable to the study of technologically relevant pyroelectric oxide materials have been investigated, namely Positron Annihilation Lifetime Spectroscopy (PALS...

  9. Evaluation of a point-of-care blood analyzer and determination of reference ranges for blood parameters in rockfish.

    Science.gov (United States)

    Harrenstien, Lisa A; Tornquist, Susan J; Miller-Morgan, Timothy J; Fodness, Brian G; Clifford, Kevin E

    2005-01-15

    To compare values of blood parameters in rockfish obtained by use of a point-of-care portable blood analyzer with values determined by a veterinary diagnostic laboratory, calculate reference ranges for various blood parameters in black rockfish, and compare values of blood parameters in clinically normal fish with those of fish with clinical abnormalities. Prospective study. 41 captive adult black rockfish (Sebastes melanops) and 4 captive adult blue rockfish (Sebastes mystinus). Rockfish were anesthetized with tricaine methanesulfonate for collection of blood samples. Heparinized blood samples were immediately analyzed with a point-of-care analyzer. Blood sodium, potassium, chloride, urea nitrogen, and glucose concentrations; Hct; pH; partial pressure of carbon dioxide; total carbon dioxide concentration; bicarbonate concentration; base excess; and hemoglobin concentration were determined. A microhematocrit technique was used to determine PCV, and a refractometer was used to estimate total plasma protein concentration. Paired heparinized blood samples were transported to a veterinary diagnostic laboratory for analyses. Data obtained with the point-of-care analyzer were reproducible; however, values for most blood parameters were significantly different from those obtained by the veterinary diagnostic laboratory. Fish with poor body condition had several blood parameter values that were lower than corresponding values in clinically normal fish. Point-of-care blood analyses may prove useful in rockfish. Point-of-care data for a large number of clinically normal fish must be obtained for reference ranges to be calculated, and further assessments of clinically abnormal fish are necessary to determine the relevance of the data.

  10. Dipolar and quadrupolar defects in a transport line

    International Nuclear Information System (INIS)

    Leleux, G.; Nghiem, P.

    1991-01-01

    The defects on a transport line of linear accelerator are studied. A transport line where the elements are influenced by the design or position defects is analyzed. Only dipolar and quadrupolar defects are considered, and the coupling betwen transversal motions are excluded. The data from the literature and those calculated by transfer matrices are compared. The defects on a line are considered from an analytical point of view. Closed optical structures are also studied [fr

  11. Quantifying He-point defect interactions in Fe through coordinated experimental and modeling studies of He-ion implanted single-crystal Fe

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Xunxiang, E-mail: xunxianghu@berkeley.edu [Department of Nuclear Engineering, University of California, Berkeley, CA 94720-1730 (United States); Xu, Donghua; Wirth, Brian D. [Department of Nuclear Engineering, University of California, Berkeley, CA 94720-1730 (United States); Department of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996-2300 (United States)

    2013-11-15

    Understanding the effects of helium on the microstructural evolution and mechanical properties of structural materials are among the most challenging issues in fusion materials research. In this work, we combine thermal helium desorption spectroscopy (THDS) with positron annihilation spectroscopy (PAS) and a spatially dependent cluster dynamics model to investigate the energetics of helium-point defect interactions in helium-implanted single-crystal iron. The combination of modeling and thermal desorption measurements allows identification of the binding energies of small He–V clusters, the migration energy of single vacancy and possible mechanisms (e.g., shrinkage of He{sub 3}V{sub 2} clusters) responsible for measured Helium desorption peaks, and the effect of impurities (e.g., carbon) on these values. Furthermore, the model predicts the depth dependence of the helium and helium–vacancy clusters as a function of time and temperature during the thermal desorption measurement. Here, we report the THDS measurement results as a function of He implantation energy from 10 to 40 keV at a fluence level of 1 × 10{sup 15} He/cm{sup 2}, along with selected PAS measurements. The experimental results are compared to the modeling predictions to evaluate the extent to which self-consistent values of the He-point defect binding and interaction energies and diffusivities can explain the data.

  12. Study of point defects in pure iron by means of electrical resistivity; Etude au moyen de la resistivite electrique des defauts ponctuels dans le fer pur

    Energy Technology Data Exchange (ETDEWEB)

    Minier-Cassayre, C [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

    1965-04-01

    In the first part of this work, after having reviewed the production, observation and the annealing of point defects In metals, we resume the present state of research. In the second part, we explain the techniques we have employed to produce point defects at low temperatures: irradiation, quenching and cold-work; and go on to the study of their migration and annealing. The experimental results obtained for pure iron and for iron containing certain impurities are presented in the third part. In the fourth part we suggest a model which explains the different stages of annealing observed, and their properties. We then compare the energies of interaction between point defects with the values deduced from the theory of elasticity. (author) [French] Dans la premiere partie de cette etude, apres avoir passe en revue la production, l'observation et les modes de guerison des defauts ponctuels dans les metaux, nous exposons l'etat actuel des recherches. La seconde partie est consacree aux techniques que nous avons employees pour produire des defauts ponctuels a basse temperature: irradiations, trempe et ecrouissage puis a l'etude de leur migration et de leur guerison. Les resultats experimentaux obtenus dans le fer pur et le fer contenant certaines impuretes sont presentes dans le troisieme chapitre. Nous proposons ensuite un modele qui explique les differents stades de guerison observes et leurs nombreuses proprietes: nous comparons les energies d'interaction entre defauts ponctuels aux valeurs que l'on pourrait deduire d'un modele elastique. (auteur)

  13. Theory of defect interactions in metals

    International Nuclear Information System (INIS)

    Thetford, Roger.

    1989-09-01

    The state relaxation program DEVIL has been updated to use N-body Finnis-Sinclair potentials. Initial calculations of self-interstitial and monovacancy formation energies confirm that the modified program is working correctly. An extra repulsive pair potential (constructed to leave the original fitting unaltered) overcomes some deficiencies in the published Finnis-Sinclair potentials. The modified potentials are used to calculate interstitial energies and relaxation in the b.c.c. transition metals vanadium, niobium, tantalum, molybdenum and tungsten. Further adaptation enables DEVIL to model dislocations running parallel to any lattice vector. Periodic boundary conditions are applied in the direction of the dislocation line, giving an infinite straight dislocation. The energies per unit length of two different dislocations are compared with experiment. A study of migration of point defects in the perfect lattice provides information on the mobility of interstitials and vacancies. The total energy needed to form and migrate an interstitial is compared with that required for a vacancy. The interaction between point defects and dislocations is studied in detail. Binding energies for both self-interstitials and monovacancies at edge dislocations are calculated for the five metals. Formation energies of the point defects in the neighbourhood of the edge dislocation are calculated for niobium, and the extend of the regions from which the defects are spontaneously absorbed are found. (author)

  14. Numerical solution of kinetics equation for point defects accumulation in metals under irradiation

    International Nuclear Information System (INIS)

    Aldzhambekova, G.T.; Iskakov, B.M.

    1999-01-01

    In the report the mathematical model, describing processes of generation and accumulation of defects in solids under irradiation is considered. The equations of this model take into account the velocity of Frenkel pairs generation, the mutual recombination of vacancies and the interstitials, as well as velocity of defects absorption by discharge channeling of vacancies and interstitials. By Runge-Kutta method the numerical solution of the model was carried out

  15. Defect structure of electrodeposited chromium layers

    International Nuclear Information System (INIS)

    Marek, T.; Suevegh, K.; Vertes, A.; El-Sharif, M.; McDougall, J.; Chisolm, C.U.

    2000-01-01

    Positron annihilation spectroscopy was applied to study the effects of pre-treatment and composition of substrates on the quality and defect structure of electrodeposited thick chromium coatings. The results show that both parameters are important, and a scenario is proposed why the mechanically polished substrate gives more defective film than the electro polished one.

  16. Defect structure of electrodeposited chromium layers

    Energy Technology Data Exchange (ETDEWEB)

    Marek, T. E-mail: marek@para.chem.elte.hu; Suevegh, K.; Vertes, A.; El-Sharif, M.; McDougall, J.; Chisolm, C.U

    2000-06-01

    Positron annihilation spectroscopy was applied to study the effects of pre-treatment and composition of substrates on the quality and defect structure of electrodeposited thick chromium coatings. The results show that both parameters are important, and a scenario is proposed why the mechanically polished substrate gives more defective film than the electro polished one.

  17. Microstructure evolution of ceramics during sintering: an analysis based on local image analysis measurements in the vicinity of controlled defects

    International Nuclear Information System (INIS)

    Girard, E.; Chaix, J.M.; Carry, C.; Valdivieso, F.; Goeuriot, P.; Lechelle, J.

    2005-01-01

    UO 2 powder containing 5% of almost spherical defects of controlled size have been sintered. The defects were prepared with the same powder by pre-sintering either the natural powder aggregates or partially milled pressed powder. Systematic image analysis was performed to get the local microstructure features inside the defects and in the matrix outside the defects. The set of results is used here as a sintering database with three identified sintering 'constraint' parameters (compaction level C 0 , radial distance r to the defect edge, and sintering 'history' H) and three microstructure 'responses' (pore volume fraction V V P , pore mean diameter D P , and grain mean diameter D G ). Data analysis in the 3D responses space shows that these variables are not independent but define a unique surface, on which each point corresponds to a set of constraints (C 0 ,r,H). (authors)

  18. Electron irradiation-induced defects in {beta}-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Oshima, Ryuichiro [Osaka Prefectural Univ., Sakai (Japan). Reseach Inst. for Advanced Science and Technology

    1996-04-01

    To add information of point defects in cubic crystal SiC, polycrystal {beta}-SiC on the market was used as sample and irradiated by neutron and electron. In situ observation of neutron and electron irradiation-induced defects in {beta}-SiC were carried out by ultra high-voltage electronic microscope (UHVEM) and ordinary electronic microscope. The obtained results show that the electron irradiation-induced secondary defects are micro defects less than 20 nm at about 1273K, the density of defects is from 2x10{sup 17} to 1x10{sup 18}/cc, the secondary defects may be hole type at high temperature and the preexistant defects control nuclear formation of irradiation-induced defects, effective sink. (S.Y.)

  19. Point Defect Identification and Management for Sub-300 nm Light Emitting Diodes and Laser Diodes Grown on Bulk AlN Substrates

    Science.gov (United States)

    Bryan, Zachary A.

    The identification and role of point defects in AlN thin films and bulk crystals are studied. High-resolution photoluminescence studies on doped and undoped c-plane and mplane homoepitaxial films reveal several sharp donor-bound exciton (DBX) peaks with a full width at half maximum (FWHM) as narrow as 500 microeV. Power dependent photoluminescence distinguish DBXs tied to the Gamma5 free exciton (FX) from those tied to the Gamma 1 FX. The DBX transitions at 6.012 and 6.006 eV are identified as originating from the neutral-donor-silicon (Si0X) and neutral-donor-oxygen (O0X) respectively. With multiple DBXs and their respective two electron satellite peaks identified, a Haynes Rule plot is developed for the first time for AlN. While high quality AlN homoepitaxy is achievable by metalorganic chemical vapor deposition (MOCVD) growth, current commercially available AlN wafers are typically hindered by the presence of a broad below bandgap optical absorption band centered at 4.7 eV ( 265 nm) with an absorption coefficient of well over 1000 cm-1. Through density functional theory calculations, it is determined that substitutional carbon on the nitrogen site causes this absorption. Further studies reveal a donor-acceptor pair (DAP) recombination between substitutional carbon on the nitrogen site and a nitrogen vacancy with an emission energy of 2.8 eV. Lastly, co-doping bulk AlN with Si or O is explored and found to suppress the unwanted 4.7 eV absorption band. A novel Fermi level control scheme for point defect management during MOCVD growth in III-nitride materials by above bandgap illumination is proposed and implemented for Mg-doped GaN and Si-doped AlGaN materials as a proof of concept. The point defect control scheme uses photo-generated minority charge carriers to control the electro-chemical potential of the system and increase the formation energies of electrically charged compensating point defects. The result is a lower incorporation of compensating point

  20. Interacting Frenkel defects at high concentration and the superionic transition in fluorite crystals

    International Nuclear Information System (INIS)

    March, N.H.; Tosi, M.P.

    1980-11-01

    A spherical cell model is proposed to account for the explicit concentration dependence of Frenkel defects in an ionic system. In the model, the linearized Debye-Hueckel equation is soluble exactly, subject to the boundary condition that the electric field is zero at the cell boundary R, related to the concentration α of defects by R proportional to csup(-1/3). This screened field is used to calculate the chemical potential, which in turn leads to a condition for the instability of the interacting defect assembly. This condition allows one to calculate the enhancement of the concentration of defects above its Arrhenius value at the point of instability in terms of (a) the critical concentration csub(c), (b) a/R, where a is the radius of defect and (c) the Debye-Hueckel screening length kappasub(c). It is clear from the cell model that this enhancement factor is reduced somewhat in the relevant range of parameters in some of the fluorites from its value in extended Debye-Hueckel theory. It is anticipated that the instability discussed here should afford an upper bound to csub(c) at the superionic transition, within the range of validity of the model. The excess he at capacity csub(p) is also discussed briefly. (author)

  1. Computer programs for eddy-current defect studies

    Energy Technology Data Exchange (ETDEWEB)

    Pate, J. R.; Dodd, C. V. [Oak Ridge National Lab., TN (USA)

    1990-06-01

    Several computer programs to aid in the design of eddy-current tests and probes have been written. The programs, written in Fortran, deal in various ways with the response to defects exhibited by four types of probes: the pancake probe, the reflection probe, the circumferential boreside probe, and the circumferential encircling probe. Programs are included which calculate the impedance or voltage change in a coil due to a defect, which calculate and plot the defect sensitivity factor of a coil, and which invert calculated or experimental readings to obtain the size of a defect. The theory upon which the programs are based is the Burrows point defect theory, and thus the calculations of the programs will be more accurate for small defects. 6 refs., 21 figs.

  2. Computer programs for eddy-current defect studies

    International Nuclear Information System (INIS)

    Pate, J.R.; Dodd, C.V.

    1990-06-01

    Several computer programs to aid in the design of eddy-current tests and probes have been written. The programs, written in Fortran, deal in various ways with the response to defects exhibited by four types of probes: the pancake probe, the reflection probe, the circumferential boreside probe, and the circumferential encircling probe. Programs are included which calculate the impedance or voltage change in a coil due to a defect, which calculate and plot the defect sensitivity factor of a coil, and which invert calculated or experimental readings to obtain the size of a defect. The theory upon which the programs are based is the Burrows point defect theory, and thus the calculations of the programs will be more accurate for small defects. 6 refs., 21 figs

  3. Radiation defect formation in two-barrier structures based on silicon

    International Nuclear Information System (INIS)

    Madatov, R.S.; Abbasov, F.P.; Mustafayev, Yu.M.

    2013-01-01

    It was developed a silicon-based photodetector with high integral sensitivity in low-wave spectrum. It was investigated the effect of gamma radiation on the mechanism of current transport in the structure of Schottky barrier type and in transitions. It is shown that the double-barrier structures can improve the photovoltaic parameters of conventional detectors. For the first time it was obtained and studied the characteristics of two-barrier structures created on the same plane. The advantages over conventional structures are shown. The annealing point is changing the structure of radiation defects and leads to their disappearance

  4. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    KAUST Repository

    Chroneos, Alexander I.; Schwingenschlö gl, Udo; Dimoulas, Athanasios Dimoulas

    2012-01-01

    in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices

  5. Fracture mechanical evaluation of high temperature structure and creep-fatigue defect assessment

    Energy Technology Data Exchange (ETDEWEB)

    Park, Chang Gyu; Kim, Jong Bum; Lee, Jae Han

    2004-02-01

    This study proposed the evaluation procedure of high temperature structures from the viewpoint of fracture mechanics on the cylindrical structure applicable to the KALIMER, which is developed by KAERI. For the evaluation of structural integrity, linear and non-linear fracture mechanics parameters were analyzed. Parameters used in creep defect growth applicable to high temperature structure of liquid metal reactor and the evaluation codes with these parameters were analyzed. The evaluation methods of defect initiation and defect growth which were established in R5/R6 code(UK), JNC method (Japan) and RCC-MR A16(France) code were analyzed respectively. The evaluation procedure of leak before break applicable to KALIMER was preliminarily developed and proposed. As an application example of defect growth, the creep-fatigue defect growth on circumferential throughwall defect in high temperature cylindrical structure was evaluated by RCC-MR A16 and this application technology was established.

  6. Natural defects and defects created by ionic implantation in zinc tellurium

    International Nuclear Information System (INIS)

    Roche, J.P.; Dupuy, M.; Pfister, J.C.

    1977-01-01

    Various defects have been studied in ZnTe crystals by transmission electron microscope and by scanning electron microscope in cathodo-luminescence mode: grain boundaries, sub-grain boundaries, twins. Ionic implants of boron (100 keV - 2x10 14 and 10 15 ions cm -2 ) were made on these crystals followed by isochrone annealing (30 minutes) of zinc under partial pressure at 550, 650 and 750 0 C. The nature of the defects was determined by transmission electron microscope: these are interstitial loops (b=1/3 ) the size of which varies between 20 A (non-annealed sample) and 180A (annealed at 750 0 C). The transmission electron microscope was also used to make concentration profiles of defects depending on depth. It is found that for the same implant (2x10 14 ions.cm -2 ), the defect peak moves towards the exterior of the crystal as the annealing temperature rises (400 - 1000 and 7000 A for the three annealings). These results are explained from a model which allows for the coalescence of defects and considers the surface of the sample as being the principal source of vacancies. During the annealings, the migration of vacancies brings about the gradual annihilation of the implant defects. The adjustment of certain calculation parameters on the computer result in giving 2 eV as energy value for the formation of vacancies [fr

  7. Impurity-related point defects and gamma-radiation response of massive quartz from the Borborema pegmatite province, in Brazil

    International Nuclear Information System (INIS)

    Miranda, Milena Ribas de; Gonzaga, Raysa Sthefany Gomes; Guzzo, Pedro Luiz; Barreto, Sandra de Brito; Melgarejo, Joan Carles

    2012-01-01

    This work has investigated the changes induced by γ-radiation on impurity-related point defects in massive rose quartz from one deposit located at The Borborema Pegmatite Province (Northeast Region, in Brazil). Samples extracted from rose and colorless (milky) quartz blocks were irradiated with doses of 60 Co, from 0.5 to 96 kGy. Point defects related to Al, Ge, Li and OH were measured by optical, infrared, and electron paramagnetic resonance spectroscopy, prior and after irradiation. The contents of Al, Li, Ge, Fe, Ti and other impurities were measured by inductively-coupled plasma mass spectrometry in quartz fragments exhibiting rose, pale-rose, and milky colorations. It was found that [AlO 4 ] 0 , [AlO 4 /H] 0 and [GeO 4 /Li] 0 were generated by the dissociation of [AlO 4 /Li] 0 and [Li-OH] centers with doses as lower as 0.5 kGy. Above 8 kGy, the electron paramagnetic resonance signal related to [GeO 4 /Li] 0 decreases due to the intense mobility of Li species throughout the quartz lattice, giving rise to E' 1 centers perturbed by Ge. The increase in [AlO 4 ] 0 content with γ doses and the consequent rise in the intensity of smoky color were similar for both rose and colorless quartz. Scanning electron microscopy carried out in insoluble residues obtained after chemical dissolution of each type of quartz revealed the presence of nanometric fibers only in rose specimens. These results suggested that the cause of rose color in massive quartz from Borborema Pegmatite Province is probably related to the presence of dumortierite inclusions. (author)

  8. New fundamental defects in a-SiO2

    International Nuclear Information System (INIS)

    Karna, S.P.; Kurtz, H.A.; Shedd, W.M.; Pugh, R.D.; Singaraju, B.K.

    1999-01-01

    Throughout the three decades of research into radiation-induced degradation of metal-oxide-semiconductor (MOS) devices, investigators understood that point defects in the Si-SiO 2 structure (localized deviations from stoichiometrically pure Si and SiO 2 ) are responsible for many observed anomalies. Basic research in this area has progressed along two tracks: (i) differentiating the anomalies based upon subtle differences in their characteristic behavior, and (ii) precise description of the defects responsible for the anomalous behavior. These two research tracks are complementary since often a discovery in one area provides insight and ultimately leads to discoveries in the other. Here, the atomic structure and spin properties of two previously undescribed amorphous silicon dioxide fundamental point defects have been characterized for the first time by ab initio quantum mechanical calculations. Both defects are electrically neutral trivalent silicon centers in the oxide. One of the defects, the X-center, is determined to have an O 2 Sitriple b ondSi ↑ atomic structure. The other defect, called the Y-center, is found to have an OSi 2 triple b ondSi ↑ structure. Calculated electronic and electrical properties of the new defect centers are consistent with the published characteristics of the oxide switching trap or border trap precursors

  9. Direct Observation of Radiation Defects: Experiment and Interpretation

    International Nuclear Information System (INIS)

    Dudarev, S.L.

    2012-01-01

    Electron microscopy is arguably the only available experimental method suitable for the direct visualization of nano-scale defect structures formed under irradiation. Images of dislocation loops and point-defect clusters in crystals are usually produced using diffraction contrast methods. For relatively large defects, a combination of dynamical imaging and image contrast simulations is required for determining the nature of visible radiation defects. At the same time, density functional theory (DFT) models developed over the last decade have provided unique information about the structure of nano-scale defects produced by irradiation, including the defects that are so small that they cannot be observed in an electron microscope, and about the pathways of migration and interaction between radiation defects. DFT models, involving no experimental input parameters and being as quantitatively accurate and informative as the most advanced experimental techniques for the direct observation of defects, have created a new paradigm for the scientific investigation of radiation damage phenomena. In particular, DFT models offer new insight into the origin of temperature-dependent response of materials to irradiation, a problem of pivotal significance for applications. By combining information derived from the first-principles models for radiation defects with information derived from small-scale experimental observations it may be possible to acquire quantitative knowledge about how materials respond to irradiation and, using this knowledge, develop materials suitable for advanced applications in fission and fusion. It now appears possible to pose the question about the development of integrated fusion power plant models, combining neutron transport calculations and microscopic models for microstructural evolution of materials, for example models for ab initio prediction of helium embrittlement. Such models, based on scientific principles and quantitative data, and developed

  10. Hinkley Point 'C' power station public inquiry: proof of evidence on plant parameters

    International Nuclear Information System (INIS)

    George, B.V.

    1988-09-01

    A public inquiry has been set up to examine the planning application made by the Central Electricity Generating Board (CEGB) for the construction of a 1200 MW Pressurized Water Reactor power station at Hinkley Point (Hinkley Point ''C'') in the United Kingdom. The overall economics of a nuclear power station depends on many factors which are determined by the design; the effectiveness with which the station is constructed; and the performance of the plant. In this respect the most significant factors are: construction time; capital cost; availability of the plant to produce electricity, taking account of those outages due to either planned or unplanned shutdowns; net electrical power output; and the working life of the plant. In this evidence to the Inquiry, the basis for the values chosen as ''targets'' for these parameters in the design of the plant and the control of the project is set out. The adjustment of the parameters to make them suitable for economic appraisal is explained. The design and project management arrangements are described. (author)

  11. Point defects in crystalline zircon (zirconium silicate), ZrSiO4: electron paramagnetic resonance studies

    Science.gov (United States)

    Tennant, W. C.; Claridge, R. F. C.; Walsby, C. J.; Lees, N. S.

    This article outlines the present state of knowledge of paramagnetic defects in crystalline zircon as obtained mainly, but not exclusively, from electron paramagnetic resonance (EPR) studies in crystalline zircon (zirconium silicate, ZrSiO4). The emphasis is on single-crystal studies where, in principle, unambiguous analysis is possible. Firstly, the crystallography of zircon is presented. Secondly, the relationships between available crystal-site symmetries and the symmetries of observed paramagnetic species in zircon, and how these observations lead to unambiguous assignments of point-group symmetries for particular paramagnetic species are detailed. Next, spin-Hamiltonian (SH) analysis is discussed with emphasis on the symmetry relationships that necessarily exist amongst the Laue classes of the crystal sites in zircon, the paramagnetic species occupying those sites and the SH itself. The final sections of the article then survey the results of EPR studies on zircon over the period 1960-2002.

  12. Characterisation of point defects in SiC by microscopic optical spectroscopy

    International Nuclear Information System (INIS)

    Evans, G.A.

    2001-09-01

    Defects have a dramatic effect on the properties of semiconductors. In SiC, intrinsic defects can be introduced during growth or device-processing steps such as implantation. In this work electron irradiation has been used for the controlled generation of defects in SiC. The irradiated material has been annealed and subsequent low temperature photoluminescence (LTPL) measurements have been performed. A key element in this work has been the ability to perform both the irradiation and characterisation on a microscopic scale. These results have allowed a variety of new optical centres to be discovered, and have also significantly enhanced the pool of knowledge about other defect centres. Utilising low voltage irradiations has enabled the electron irradiation voltage displacement thresholds for Carbon and Silicon displacements to be investigated. In 4H-SiC the electron irradiation voltage displacement thresholds were found to be 88kV for C displacement and 225kV for Si displacement. A large number of previously unreported luminescence features have been measured in 4H, 6H and 15R-SiC material. The criteria used for comparison are the voltage threshold, annealing characteristics, spatial distribution with respect to the irradiated region, and the characteristics of associated local modes and vibronic structures. Compelling evidence has been found to support the assignment of centres in 4H and 6H-SiC to a C-C dumbbell split interstitial defect. Two high energy local modes at 133meV and 180meV are associated with these centres. In 13 C enriched 6H-SiC material the 180meV local mode splits into three components whilst the 133meV local mode splits into two components. This splitting is interpreted as being caused by isotopic substitutions between the components of the C-C dumbbell. The high energy local mode corresponds to the bonding between the two constituent atoms of the dumbbell whilst the low energy local mode is associated with the bonding between either a C 13 or 12

  13. Auto-oscillations of temperature and defect density in impure crystals under irradiation

    International Nuclear Information System (INIS)

    Selishchev, P.A.; Sugakov, V.I.

    1990-01-01

    Appearance of auto-oscillations in temperature and defect density of impurity crystals under irradiation is studied. It is shown that at certain critical parameters stationary distribution of temperature and defect density of the sample irradiated becomes unstable as regards the formation of temporal dissipative structures: auto-oscillations of temperature and defect density. Critical parameters are determined (the rate of defect formation, temperature of crystal environment, etc.) and the frequency of appearing auto-oscillations, its dependence on irradiation conditions and crystal properties are found

  14. Breakdown, fractoemission, diffusion: role of defects in dielectrics

    International Nuclear Information System (INIS)

    Vigouroux, J.P.; Serruys, Y.

    1987-01-01

    During the surface analysis of dielectric materials, the impinging ionising particles induce point defects localised in the band gap and build an electrical charge. The electric field created by the charged defects modifies the physico-chemical properties of surface and bulk. We show that the fundamental study of defects allows a better understanding of technological phenomena such as dielectric breakdown, fracture and diffusion [fr

  15. Analysed a defective of the machine for a cap-tube nuclear fuel element ME-27 from its electricity point of view

    International Nuclear Information System (INIS)

    Achmad Suntoro

    2009-01-01

    It has been analysed a defective of the machine for a cap-tube nuclear fuel element ME-27 from its electricity point of view. The machine uses magnetic force resistance welding technique. A short circuit was happened within the machine because the nut for tightening high voltage cable for welding transformer was broken so that the cable touched the machine body and produced the short circuit. This condition made both the primary circuit breaker in the building down and produced high voltage pulse induction to the electronic circuit within the machine so that one of its electronic components was defective. This case becomes warnings on how important of tightening a nut according to its strength specification (using wrench torque) and the necessity of voltage transient limitation circuit to be installed. Both of the warnings are necessary for any equipment consuming high electric current oriented such as the ME-27 machine. (author)

  16. Quantum computing with defects.

    Science.gov (United States)

    Weber, J R; Koehl, W F; Varley, J B; Janotti, A; Buckley, B B; Van de Walle, C G; Awschalom, D D

    2010-05-11

    Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV(-1)) center stands out for its robustness--its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV(-1) center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally coordinated semiconductors.

  17. Physisorption of molecular hydrogen on carbon nanotube with vacant defects

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Gang; Shen, Huaze; Wang, Enge; Xu, Limei, E-mail: limei.xu@pku.edu.cn [International Center for Quantum Materials and School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Tangpanitanon, Jirawat [University of Cambridge, Cambridge, Cambridgeshire CB2 1TP (United Kingdom); Wen, Bo [International Center for Quantum Materials and School of Physics, Peking University, Beijing 100871 (China); Beijing Computational Science Research Center, Heqing Street, Haidian District, Beijing 100084 (China); Xue, Jianming [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China); Center for Applied Physics and Technology, Peking University, Beijing 100871 (China)

    2014-05-28

    Physisorption of molecular hydrogen on single-walled carbon nanotubes (SWCNTs) is important for its engineering applications and hydrogen energy storage. Using molecular dynamics simulation, we study the physisorption of molecular hydrogen on a SWCNT with a vacant defect, focusing on the effect of the vacant defect size and external parameters such as temperature and pressure. We find that hydrogen can be physisorbed inside a SWCNT through a vacant defect when the defect size is above a threshold. By controlling the size of the defects, we are able to extract hydrogen molecules from a gas mixture and store them inside the SWCNT. We also find that external parameters, such as low temperature and high pressure, enhance the physisorption of hydrogen molecules inside the SWCNT. In addition, the storage efficiency can be improved by introducing more defects, i.e., reducing the number of carbon atoms on the SWCNT.

  18. Physisorption of molecular hydrogen on carbon nanotube with vacant defects

    Science.gov (United States)

    Sun, Gang; Tangpanitanon, Jirawat; Shen, Huaze; Wen, Bo; Xue, Jianming; Wang, Enge; Xu, Limei

    2014-05-01

    Physisorption of molecular hydrogen on single-walled carbon nanotubes (SWCNTs) is important for its engineering applications and hydrogen energy storage. Using molecular dynamics simulation, we study the physisorption of molecular hydrogen on a SWCNT with a vacant defect, focusing on the effect of the vacant defect size and external parameters such as temperature and pressure. We find that hydrogen can be physisorbed inside a SWCNT through a vacant defect when the defect size is above a threshold. By controlling the size of the defects, we are able to extract hydrogen molecules from a gas mixture and store them inside the SWCNT. We also find that external parameters, such as low temperature and high pressure, enhance the physisorption of hydrogen molecules inside the SWCNT. In addition, the storage efficiency can be improved by introducing more defects, i.e., reducing the number of carbon atoms on the SWCNT.

  19. Physisorption of molecular hydrogen on carbon nanotube with vacant defects

    International Nuclear Information System (INIS)

    Sun, Gang; Shen, Huaze; Wang, Enge; Xu, Limei; Tangpanitanon, Jirawat; Wen, Bo; Xue, Jianming

    2014-01-01

    Physisorption of molecular hydrogen on single-walled carbon nanotubes (SWCNTs) is important for its engineering applications and hydrogen energy storage. Using molecular dynamics simulation, we study the physisorption of molecular hydrogen on a SWCNT with a vacant defect, focusing on the effect of the vacant defect size and external parameters such as temperature and pressure. We find that hydrogen can be physisorbed inside a SWCNT through a vacant defect when the defect size is above a threshold. By controlling the size of the defects, we are able to extract hydrogen molecules from a gas mixture and store them inside the SWCNT. We also find that external parameters, such as low temperature and high pressure, enhance the physisorption of hydrogen molecules inside the SWCNT. In addition, the storage efficiency can be improved by introducing more defects, i.e., reducing the number of carbon atoms on the SWCNT

  20. In-Process Detection of Weld Defects Using Laser-Based Ultrasound

    International Nuclear Information System (INIS)

    Bacher, G.D.; Kercel, S.W.; Kisner, R.A.; Klein, M.B.; Pouet, B.

    1999-01-01

    Laser-based ultrasonic (LBU) measurement shows great promise for on-line monitoring of weld quality in tailor-welded blanks. Tailor-welded blanks are steel blanks made from plates of differing thickness and/or properties butt-welded together; they are used in automobile manufacturing to produce body, frame, and closure panels. LBU uses a pulsed laser to generate the ultrasound and a continuous wave (CW) laser interferometer to detect the ultrasound at the point of interrogation to perform ultrasonic inspection. LBU enables in-process measurements since there is no sensor contact or near-contact with the workpiece. The authors are using laser-generated plate (Lamb) waves to propagate from one plate into the weld nugget as a means of detecting defects. This paper reports the results of the investigation of a number of inspection architectures based on processing of signals from selected plate waves, which are either reflected from or transmitted through the weld zone. Bayesian parameter estimation and wavelet analysis (both continuous and discrete) have shown that the LBU time-series signal is readily separable into components that provide distinguishing features which describe weld quality. The authors anticipate that, in an on-line industrial application, these measurements can be implemented just downstream from the weld cell. Then the weld quality data can be fed back to control critical weld parameters or alert the operator of a problem requiring maintenance. Internal weld defects and deviations from the desired surface profile can then be corrected before defective parts are produced

  1. Phase defects and spatiotemporal disorder in traveling-wave convection patterns

    International Nuclear Information System (INIS)

    La Porta, A.; Surko, C.M.

    1997-01-01

    Spatiotemporal disorder is studied in traveling-wave convection in ethanol-water mixtures. Spectral measures of disorder, linear correlation functions, and mutual information are used to characterize the patterns, and are found to give a weak indication of the level of disorder. The calculation of the complex order parameter for experimental patterns is described. It is found that the ordering of the patterns is accompanied by a dramatic change in the topological structure of the order parameter. Specific arrangements of defects are found to be associated with the elements of traveling-wave patterns, and the net charge and total number of defects is introduced as a measure of disorder in the patterns. The coarsening of the patterns is marked by an accumulation of net charge and a dramatic decrease in the number of defects. The physical significance of the defects is discussed, and it is shown that the phase velocity of the waves is lower in the vicinity of the defects. The defect-defect correlation functions are calculated for the convection patterns. It is shown that the ordering of the patterns is closely related to the apparent defect-defect interactions. copyright 1997 The American Physical Society

  2. Defect spectroscopy of single ZnO microwires

    Science.gov (United States)

    Villafuerte, M.; Ferreyra, J. M.; Zapata, C.; Barzola-Quiquia, J.; Iikawa, F.; Esquinazi, P.; Heluani, S. P.; de Lima, M. M.; Cantarero, A.

    2014-04-01

    The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 × 1018 cm-3. This combination of techniques allows us to study the band gap values and defects states inside the gap in single ZnO microwires and opens the possibility to be used as a defect spectroscopy method.

  3. Implications of defect clusters formed in cascades on free defect generation and microstructural development

    International Nuclear Information System (INIS)

    Wiedersich, H.

    1992-12-01

    A large fraction of the defects produced by irradiation with energetic neutrons or heavy ions originates in cascades. Not only increased recombination of vacancy and interstitial defects but also significant clustering of like defects occur. Both processes reduce the number of point defects available for long range migration. Consequences of defect clustering in cascades will be discussed in a semi-quantitative form with the aid of calculations using a very simplified model: Quasi-steady-state distributions of immobile vacancy and/or interstitial clusters develop which, in turn, can become significant sinks for mobile defects, and, therefore reduce their lifetime. Although cluster sinks will cause segregation and, potentially, precipitation of second phases due to local changes of composition, the finite lifetime of clusters will not lead to lasting, local compositional changes. A transition from highly dense interstitial and vacancy cluster distributions to the void swelling regime occurs when the thermal evaporation of vacancies from small vacancy clusters becomes significant at higher temperatures. Unequal clustering of vacancies and interstitials leads to an imbalance of their fluxes of in the matrix and, hence, to unequal contributions to atom transport by interstitials and by vacancies even in the quasi-steady state approximation

  4. Influences of point defects on electrical and optical properties of InGaN light-emitting diodes at cryogenic temperature

    Science.gov (United States)

    Tu, Yi; Ruan, Yujiao; Zhu, Lihong; Tu, Qingzhen; Wang, Hongwei; Chen, Jie; Lu, Yijun; Gao, Yulin; Shih, Tien-Mo; Chen, Zhong; Lin, Yue

    2018-04-01

    We investigate the cryogenic external quantum efficiency (EQE) for some InGaN light-emitting diodes with different indium contents. We observe a monotonic decrease in EQE with the increasing forward current before the "U-turn" point, beyond which the thermal effect increases the EQE. We discover positive dependences among the droop rate (χ), differential electrical resistance (Rd), and indium content. Also, χ and Rd of individual green samples shift correspondingly during the aging test, when the Mg ions are activated at high injection density and diffuse into the active region. Considering the fact that both In and Mg ions would introduce point defects (PDs), we proposed a model that reveals the mechanism of interplay between PDs and carriers. PDs serve as both energy traps and non-radiative recombination centers. They attract and confine carriers, leading to an increase in Rd and a decrease in EQE.

  5. Electron paramagnetic resonance of intrinsic point defects in GaAs following plastic deformation

    International Nuclear Information System (INIS)

    Benakki-Stiet, S.

    1988-01-01

    Defects generated in GaAs by a plastic deformation were studied to see if these defects, particularly anionic antisites associated with the deep donor EL2, were the same as those presented in the raw growth material, or the same as those which can be created in a high concentration by electron or neutron irradiation. Results show that there are different types of anionic antisites, so the subset associated with EL2 was identified. The apparent correlation between EL2 and dislocation density is discussed [fr

  6. Quantum correction and ordering parameter for systems connected by a general point canonical transformation

    International Nuclear Information System (INIS)

    Yeon, Kyu Hwang; Hong, Suc Kyoung; Um, Chung In; George, Thomas F.

    2006-01-01

    With quantum operators corresponding to functions of the canonical variables, Schroedinger equations are constructed for systems corresponding to classical systems connected by a general point canonical transformation. Using the operator connecting quantum states between systems before and after the transformation, the quantum correction term and ordering parameter are obtained

  7. Point Defects in 3D and 1D Nanomaterials: The Model Case of Titanium Dioxide

    International Nuclear Information System (INIS)

    Knauth, Philippe

    2010-01-01

    Titanium dioxide is one of the most important oxides for applications in energy and environment, such as solar cells, photocatalysis, lithium-ion batteries. In recent years, new forms of titanium dioxide with unusual structure and/or morphology have been developed, including nanocrystals, nanotubes or nanowires. We have studied in detail the point defect chemistry in nanocrystalline TiO 2 powders and ceramics. There can be a change from predominant Frenkel to Schottky disorder, depending on the experimental conditions, e.g. temperature and oxygen partial pressure. We have also studied the local environment of various dopants with similar ion radius, but different ion charge (Zn 2+ , Y 3+ , Sn 4+ , Zr 4+ , Nb 5+ ) in TiO 2 nanopowders and nanoceramics by Extended X-Ray Absorption Fine Structure (EXAFS) Spectroscopy. Interfacial segregation of acceptors was demonstrated, but donors and isovalent ions do not segregate. An electrostatic 'space charge' segregation model is applied, which explains well the observed phenomena.

  8. Defect production in simulated cascades: cascade quenching and short-term annealing

    International Nuclear Information System (INIS)

    Heinisch, H.L.

    1982-01-01

    Defect production in high energy displacement cascades has been modeled using the computer code MARLOWE to generate the cascades and the stochastic computer code ALSOME to simulate the cascade quenching and short-term annealing of isolated cascades. The quenching is accomplished by using ALSOME with exaggerated values for defect mobilities and critical reaction distanes for recombination and clustering, which are in effect until the number of defect pairs is equal to the value determined from resistivity experiments at 4K. Then normal mobilities and reaction distances are used during short-term annealing to a point representative of Stage III recovery. Effects of cascade interactions at low fluences are also being investigated. The quenching parameter values were empirically determined for 30 keV cascades. The results agree well with experimental information throughout the range from 1 keV to 100 keV. Even after quenching and short-term annealing the high energy cascades behave as a collection of lower energy subcascades and lobes. Cascades generated in a crystal having thermal displacements were found to be in better agreement with experiments after quenching and annealing than those generated in a non-thermal crystal

  9. Influence of irradiation defects on anelastic properties of magnesium

    International Nuclear Information System (INIS)

    Minier, C.; Haneczok, G.; Lauzier, J.

    1985-01-01

    Irradiation defects in magnesium and their interactions with dislocations are studied by internal friction and elastic modulus. Long distance migration of different defects are determined. Relaxation peaks at very low temperature are analyzed. In the interaction peak between defects and dislocations it is shown that defects are interstitials and that dislocations are responsible for the peak B 1 and the interaction mechanism is probably associated to a side motion of defects along the lines. Defects brought by irradiation on dislocations are used for testing Bordoni relaxation theory and variation of parameters of peak B 1 and B 2 are analyzed [fr

  10. Interaction of point intrinsic defects in n-type indium phosphide with acceptor clusters

    International Nuclear Information System (INIS)

    Vitovskij, N.A.; Lagunova, T.S.; Rakhimov, O.

    1984-01-01

    The rates of implanting defects of donor- and acceptor type stable at room temperature in n-InP during gamma irradiation are found to vary versus the compensating impurity type. Zinc atoms interact with defects most actively. Irradiation also brings about the growth of acceptor clusters, this growth being most markedly expressed in InP . The presence of an additional mechanism of charge-carriers scattering associated with the existence of clusters of compensating centres is verified, the temperature dependence of the effectiveness of this mechanism μ approximately Tsup(-1.2) is found

  11. Theory of Defects in Semiconductors

    CERN Document Server

    Drabold, David A

    2007-01-01

    Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.

  12. Intrinsic point defects in inorganic perovskite CsPbI3 from first-principles prediction

    KAUST Repository

    Li, Yifan

    2017-10-19

    Cubic inorganic perovskite CsPbI3 is a direct bandgap semiconductor, which is promising for optoelectronic applications, such as solar cells, light emitting diodes, and lasers. The intrinsic defects in semiconductors play crucial roles in determining carrier conductivity, the efficiency of carrier recombination, and so on. However, the thermodynamic stability and intrinsic defect physics are still unclear for cubic CsPbI3. By using the first-principles calculations, we study the thermodynamic process and find out that the window for CsPbI3 growth is quite narrow and the concentration of Cs is important for cubic CsPbI3 growth. Under Pb-rich conditions, VPb and VI can pin the Fermi energy in the middle of the bandgap, which results in a low carrier concentration. Under Pb-poor conditions, VPb is the dominant defect and the material has a high concentration of hole carriers with a long lifetime. Our present work gives an insight view of the defect physics of cubic CsPbI3 and will be beneficial for optoelectronic applications based on cubic CsPbI3 and other analogous inorganic perovskites.

  13. Intrinsic point defects in inorganic perovskite CsPbI3 from first-principles prediction

    KAUST Repository

    Li, Yifan; Zhang, Chenhui; Zhang, Xixiang; Huang, Dan; Shen, Qian; Cheng, Yingchun; Huang, Wei

    2017-01-01

    Cubic inorganic perovskite CsPbI3 is a direct bandgap semiconductor, which is promising for optoelectronic applications, such as solar cells, light emitting diodes, and lasers. The intrinsic defects in semiconductors play crucial roles in determining carrier conductivity, the efficiency of carrier recombination, and so on. However, the thermodynamic stability and intrinsic defect physics are still unclear for cubic CsPbI3. By using the first-principles calculations, we study the thermodynamic process and find out that the window for CsPbI3 growth is quite narrow and the concentration of Cs is important for cubic CsPbI3 growth. Under Pb-rich conditions, VPb and VI can pin the Fermi energy in the middle of the bandgap, which results in a low carrier concentration. Under Pb-poor conditions, VPb is the dominant defect and the material has a high concentration of hole carriers with a long lifetime. Our present work gives an insight view of the defect physics of cubic CsPbI3 and will be beneficial for optoelectronic applications based on cubic CsPbI3 and other analogous inorganic perovskites.

  14. Radiation induced segregation and point defects in binary copper alloys

    International Nuclear Information System (INIS)

    Monteiro, W.A.

    1984-01-01

    Considerable progress, both theoretical and experimental, has been made in establishing and understanding the influence of factors such as temperature, time, displacement rate dependence and the effect of initial solute misfit on radiation induced solute diffusion and segregation. During irradiation, the composition of the alloy changes locally, due to defect flux driven non-equilibrium segregation near sinks such as voids, external surfaces and grain boundaries. This change in composition could influence properties and phenomena such as ductility, corrosion resistance, stress corrosion cracking, sputtering and blistering of materials used in thermo-nuclear reactors. In this work, the effect of 1 MeV electron irradiation on the initiation and development of segregation and defect diffusion in binary copper alloys has been studied in situ, with the aid of a high voltage electron microscope. The binary copper alloys had Be, Pt and Sn as alloying elements which had atomic radii less than, similar and greater than that of copper, respectively. It has been observed that in a wide irradiation temperature range, stabilization and growth of dislocation loops took place in Cu-Sn and Cu-Pt alloys. Whereas in the Cu-Be alloy, radiation induced precipitates formed and transformed to the stable γ phase. (Author) [pt

  15. Holographic entanglement entropy of surface defects

    International Nuclear Information System (INIS)

    Gentle, Simon A.; Gutperle, Michael; Marasinou, Chrysostomos

    2016-01-01

    We calculate the holographic entanglement entropy in type IIB supergravity solutions that are dual to half-BPS disorder-type surface defects in N=4 supersymmetric Yang-Mills theory. The entanglement entropy is calculated for a ball-shaped region bisected by a surface defect. Using the bubbling supergravity solutions we also compute the expectation value of the defect operator. Combining our result with the previously-calculated one-point function of the stress tensor in the presence of the defect, we adapt the calculation of Lewkowycz and Maldacena http://dx.doi.org/10.1007/JHEP05(2014)025 to obtain a second expression for the entanglement entropy. Our two expressions agree up to an additional term, whose possible origin and significance is discussed.

  16. Holographic entanglement entropy of surface defects

    Energy Technology Data Exchange (ETDEWEB)

    Gentle, Simon A.; Gutperle, Michael; Marasinou, Chrysostomos [Department of Physics and Astronomy, University of California,Los Angeles, CA 90095 (United States)

    2016-04-12

    We calculate the holographic entanglement entropy in type IIB supergravity solutions that are dual to half-BPS disorder-type surface defects in N=4 supersymmetric Yang-Mills theory. The entanglement entropy is calculated for a ball-shaped region bisected by a surface defect. Using the bubbling supergravity solutions we also compute the expectation value of the defect operator. Combining our result with the previously-calculated one-point function of the stress tensor in the presence of the defect, we adapt the calculation of Lewkowycz and Maldacena http://dx.doi.org/10.1007/JHEP05(2014)025 to obtain a second expression for the entanglement entropy. Our two expressions agree up to an additional term, whose possible origin and significance is discussed.

  17. Crystal defect studies using x-ray diffuse scattering

    Energy Technology Data Exchange (ETDEWEB)

    Larson, B.C.

    1980-01-01

    Microscopic lattice defects such as point (single atom) defects, dislocation loops, and solute precipitates are characterized by local electronic density changes at the defect sites and by distortions of the lattice structure surrounding the defects. The effect of these interruptions of the crystal lattice on the scattering of x-rays is considered in this paper, and examples are presented of the use of the diffuse scattering to study the defects. X-ray studies of self-interstitials in electron irradiated aluminum and copper are discussed in terms of the identification of the interstitial configuration. Methods for detecting the onset of point defect aggregation into dislocation loops are considered and new techniques for the determination of separate size distributions for vacancy loops and interstitial loops are presented. Direct comparisons of dislocation loop measurements by x-rays with existing electron microscopy studies of dislocation loops indicate agreement for larger size loops, but x-ray measurements report higher concentrations in the smaller loop range. Methods for distinguishing between loops and three-dimensional precipitates are discussed and possibilities for detailed studies considered. A comparison of dislocation loop size distributions obtained from integral diffuse scattering measurements with those from TEM show a discrepancy in the smaller sizes similar to that described above.

  18. Crystal defect studies using x-ray diffuse scattering

    International Nuclear Information System (INIS)

    Larson, B.C.

    1980-01-01

    Microscopic lattice defects such as point (single atom) defects, dislocation loops, and solute precipitates are characterized by local electronic density changes at the defect sites and by distortions of the lattice structure surrounding the defects. The effect of these interruptions of the crystal lattice on the scattering of x-rays is considered in this paper, and examples are presented of the use of the diffuse scattering to study the defects. X-ray studies of self-interstitials in electron irradiated aluminum and copper are discussed in terms of the identification of the interstitial configuration. Methods for detecting the onset of point defect aggregation into dislocation loops are considered and new techniques for the determination of separate size distributions for vacancy loops and interstitial loops are presented. Direct comparisons of dislocation loop measurements by x-rays with existing electron microscopy studies of dislocation loops indicate agreement for larger size loops, but x-ray measurements report higher concentrations in the smaller loop range. Methods for distinguishing between loops and three-dimensional precipitates are discussed and possibilities for detailed studies considered. A comparison of dislocation loop size distributions obtained from integral diffuse scattering measurements with those from TEM show a discrepancy in the smaller sizes similar to that described above

  19. Probabilistic inference of ecohydrological parameters using observations from point to satellite scales

    Science.gov (United States)

    Bassiouni, Maoya; Higgins, Chad W.; Still, Christopher J.; Good, Stephen P.

    2018-06-01

    Vegetation controls on soil moisture dynamics are challenging to measure and translate into scale- and site-specific ecohydrological parameters for simple soil water balance models. We hypothesize that empirical probability density functions (pdfs) of relative soil moisture or soil saturation encode sufficient information to determine these ecohydrological parameters. Further, these parameters can be estimated through inverse modeling of the analytical equation for soil saturation pdfs, derived from the commonly used stochastic soil water balance framework. We developed a generalizable Bayesian inference framework to estimate ecohydrological parameters consistent with empirical soil saturation pdfs derived from observations at point, footprint, and satellite scales. We applied the inference method to four sites with different land cover and climate assuming (i) an annual rainfall pattern and (ii) a wet season rainfall pattern with a dry season of negligible rainfall. The Nash-Sutcliffe efficiencies of the analytical model's fit to soil observations ranged from 0.89 to 0.99. The coefficient of variation of posterior parameter distributions ranged from interest. In these cases, model inversion converged more slowly but ultimately provided better goodness of fit and lower uncertainty. Results were robust using as few as 100 daily observations randomly sampled from the full records, demonstrating the advantage of analyzing soil saturation pdfs instead of time series to estimate ecohydrological parameters from sparse records. Our work combines modeling and empirical approaches in ecohydrology and provides a simple framework to obtain scale- and site-specific analytical descriptions of soil moisture dynamics consistent with soil moisture observations.

  20. Displacement cascades and defect annealing in tungsten, Part III: The sensitivity of cascade annealing in tungsten to the values of kinetic parameters

    Energy Technology Data Exchange (ETDEWEB)

    Nandipati, Giridhar, E-mail: giridhar.nandipati@pnnl.gov [Pacific Northwest National Laboratory, Richland, WA (United States); Setyawan, Wahyu; Heinisch, Howard L. [Pacific Northwest National Laboratory, Richland, WA (United States); Roche, Kenneth J. [Pacific Northwest National Laboratory, Richland, WA (United States); Department of Physics, University of Washington, Seattle, WA 98195 (United States); Kurtz, Richard J. [Pacific Northwest National Laboratory, Richland, WA (United States); Wirth, Brian D. [University of Tennessee, Knoxville, TN (United States)

    2015-07-15

    A study has been performed using object kinetic Monte Carlo (OKMC) simulations to investigate various aspects of cascade aging in bulk tungsten (W) and to determine its sensitivity to the kinetic parameters. The primary focus is on how the kinetic parameters affect the intracascade recombination of defects. Results indicate that, due to the disparate mobilities of SIA and vacancy clusters, annealing is dominated by SIA migration even at 2050 K. It was found that for 100 keV cascades initiated at 300 K, recombination is dominated by the annihilation of large defect clusters, while for all the other primary knock-on atom (PKA) energies and temperatures, recombination is primarily due to the migration and rotation of small SIA clusters, while the large SIA clusters escape the simulation cell. The annealing efficiency exhibits an inverse U-shaped curve behavior with increasing temperature, especially at large PKA energies, caused by the asymmetry in SIA and vacancy clustering assisted by the large differences in their mobilities. This behavior is unaffected by the dimensionality of SIA migration, and it persists over a broad range of relative mobilities of SIAs and vacancies.

  1. Topological defects from the multiverse

    Science.gov (United States)

    Zhang, Jun; Blanco-Pillado, Jose J.; Garriga, Jaume; Vilenkin, Alexander

    2015-05-01

    Many theories of the early universe predict the existence of a multiverse where bubbles continuously nucleate giving rise to observers in their interior. In this paper, we point out that topological defects of several dimensionalities will also be produced in de Sitter like regions of the multiverse. In particular, defects could be spontaneously nucleated in our parent vacuum. We study the evolution of these defects as they collide with and propagate inside of our bubble. We estimate the present distribution of defects in the observable part of the universe. The expected number of such nearby defects turns out to be quite small, even for the highest nucleation rate. We also study collisions of strings and domain walls with our bubble in our past light cone. We obtain simulated full-sky maps of the loci of such collisions, and find their angular size distribution. Similarly to what happens in the case of bubble collisions, the prospect of detecting any collisions of our bubble with ambient defects is greatly enhanced in the case where the cosmological constant of our parent vacuum is much higher than the vacuum energy density during inflation in our bubble.

  2. Topological defects from the multiverse

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jun [Institute of Cosmology, Department of Physics and Astronomy, Tufts University, Medford, MA 02155 (United States); Blanco-Pillado, Jose J. [Department of Theoretical Physics, University of the Basque Country UPV/EHU, 48080 Bilbao (Spain); IKERBASQUE, Basque Foundation for Science, 48013, Bilbao (Spain); Garriga, Jaume [Departament de Fisica Fonamental i Institut de Ciencies del Cosmos, Universitat de Barcelona, Marti i Franques, 1, 08028, Barcelona (Spain); Vilenkin, Alexander [Institute of Cosmology, Department of Physics and Astronomy, Tufts University, Medford, MA 02155 (United States)

    2015-05-28

    Many theories of the early universe predict the existence of a multiverse where bubbles continuously nucleate giving rise to observers in their interior. In this paper, we point out that topological defects of several dimensionalities will also be produced in de Sitter like regions of the multiverse. In particular, defects could be spontaneously nucleated in our parent vacuum. We study the evolution of these defects as they collide with and propagate inside of our bubble. We estimate the present distribution of defects in the observable part of the universe. The expected number of such nearby defects turns out to be quite small, even for the highest nucleation rate. We also study collisions of strings and domain walls with our bubble in our past light cone. We obtain simulated full-sky maps of the loci of such collisions, and find their angular size distribution. Similarly to what happens in the case of bubble collisions, the prospect of detecting any collisions of our bubble with ambient defects is greatly enhanced in the case where the cosmological constant of our parent vacuum is much higher than the vacuum energy density during inflation in our bubble.

  3. Topological defects from the multiverse

    International Nuclear Information System (INIS)

    Zhang, Jun; Vilenkin, Alexander; Blanco-Pillado, Jose J.; Garriga, Jaume

    2015-01-01

    Many theories of the early universe predict the existence of a multiverse where bubbles continuously nucleate giving rise to observers in their interior. In this paper, we point out that topological defects of several dimensionalities will also be produced in de Sitter like regions of the multiverse. In particular, defects could be spontaneously nucleated in our parent vacuum. We study the evolution of these defects as they collide with and propagate inside of our bubble. We estimate the present distribution of defects in the observable part of the universe. The expected number of such nearby defects turns out to be quite small, even for the highest nucleation rate. We also study collisions of strings and domain walls with our bubble in our past light cone. We obtain simulated full-sky maps of the loci of such collisions, and find their angular size distribution. Similarly to what happens in the case of bubble collisions, the prospect of detecting any collisions of our bubble with ambient defects is greatly enhanced in the case where the cosmological constant of our parent vacuum is much higher than the vacuum energy density during inflation in our bubble

  4. Time-domain vibrational study on defects in ion-irradiated crystal

    International Nuclear Information System (INIS)

    Kitajima, M.

    2003-01-01

    We have studied the effects of point defects on coherent phonons in ion-implanted bismuth and graphite. Ultrafast dynamics of coherent phonons and photo-generated carriers in the femtosecond time-domain have been investigated by means of pump-probe reflectivity measurements. Point defects are introduced by irradiating graphite with 5 keV He + ions. For Bi the dephasing rate of the A 1g phonon increases linearly with increasing ion dose, which is explained by the additional dephasing process of the coherent phonon originated from scattering of phonons by the defects. For graphite, introduction of the defects enhances the carrier relaxation by opening a decay channel via vacancy-states, which competes efficiently with carrier-phonon scattering. The coherent acoustic phonon relaxation is also accelerated due to an additional scattering by defects. The linear fluence-dependence of the decay rate is understood as scattering of propagating acoustic phonon by single vacancies. (author)

  5. Finite volume form factors in the presence of integrable defects

    International Nuclear Information System (INIS)

    Bajnok, Z.; Buccheri, F.; Hollo, L.; Konczer, J.; Takacs, G.

    2014-01-01

    We developed the theory of finite volume form factors in the presence of integrable defects. These finite volume form factors are expressed in terms of the infinite volume form factors and the finite volume density of states and incorporate all polynomial corrections in the inverse of the volume. We tested our results, in the defect Lee–Yang model, against numerical data obtained by truncated conformal space approach (TCSA), which we improved by renormalization group methods adopted to the defect case. To perform these checks we determined the infinite volume defect form factors in the Lee–Yang model exactly, including their vacuum expectation values. We used these data to calculate the two point functions, which we compared, at short distance, to defect CFT. We also derived explicit expressions for the exact finite volume one point functions, which we checked numerically. In all of these comparisons excellent agreement was found

  6. Exploring atomic defects in molybdenum disulphide monolayers

    KAUST Repository

    Hong, Jinhua; Hu, Zhixin; Probert, Matt; Li, Kun; Lv, Danhui; Yang, Xinan; Gu, Lin; Mao, Nannan; Feng, Qingliang; Xie, Liming; Zhang, Jin; Wu, Dianzhong; Zhang, Zhiyong; Jin, Chuanhong; Ji, Wei; Zhang, Xixiang; Yuan, Jun; Zhang, Ze

    2015-01-01

    Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10 13 cm '2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

  7. Exploring atomic defects in molybdenum disulphide monolayers

    KAUST Repository

    Hong, Jinhua

    2015-02-19

    Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10 13 cm \\'2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

  8. The investigation of radiation induced defects in MgO

    International Nuclear Information System (INIS)

    Puetz, M.

    1990-05-01

    In this paper Frenkel defects were induced in MgO by 3 MeV electrons at low temperature. These defects were investigated by measurements of the optical absorption, by investigating the lattice parameters and Huang diffuse scattering. (WL)

  9. Defects in Amorphous Semiconductors: The Case of Amorphous Indium Gallium Zinc Oxide

    Science.gov (United States)

    de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

    2018-05-01

    Based on a rational classification of defects in amorphous materials, we propose a simplified model to describe intrinsic defects and hydrogen impurities in amorphous indium gallium zinc oxide (a -IGZO). The proposed approach consists of organizing defects into two categories: point defects, generating structural anomalies such as metal—metal or oxygen—oxygen bonds, and defects emerging from changes in the material stoichiometry, such as vacancies and interstitial atoms. Based on first-principles simulations, it is argued that the defects originating from the second group always act as perfect donors or perfect acceptors. This classification simplifies and rationalizes the nature of defects in amorphous phases. In a -IGZO, the most important point defects are metal—metal bonds (or small metal clusters) and peroxides (O - O single bonds). Electrons are captured by metal—metal bonds and released by the formation of peroxides. The presence of hydrogen can lead to two additional types of defects: metal-hydrogen defects, acting as acceptors, and oxygen-hydrogen defects, acting as donors. The impact of these defects is linked to different instabilities observed in a -IGZO. Specifically, the diffusion of hydrogen and oxygen is connected to positive- and negative-bias stresses, while negative-bias illumination stress originates from the formation of peroxides.

  10. Observation of defects evolution in electronic materials

    Science.gov (United States)

    Jang, Jung Hun

    Advanced characterization techniques have been used to obtain a better understanding of the microstructure of electronic materials. The structural evolution, especially defects, has been investigated during the film growth and post-growth processes. Obtaining the relation between the defect evolution and growth/post-growth parameters is very important to obtain highly crystalline films. In this work, the growth and post-growth related defects in GaN, ZnO, strained-Si/SiGe films have been studied using several advanced characterization techniques. First of all, the growth of related defects in GaN and p-type ZnO films have been studied. The effect of growth parameters, such as growth temperature, gas flow rate, dopants used during the deposition, on the crystalline quality of the GaN and ZnO layers was investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). In GaN films, it was found that the edge and mixed type threading dislocations were the dominant defects so that the only relevant figure of merit (FOM) for the crystalline quality should be the FWHM value of o-RC of the surface perpendicular plane which could be determined by a grazing incidence x-ray diffraction (GIXD) technique as shown in this work. The understanding of the relationship between the defect evolution and growth parameters allowed for the growth of high crystalline GaN films. For ZnO films, it was found that the degree of texture and crystalline quality of P-doped ZnO films decreased with increasing the phosphorus atomic percent. In addition, the result from the x-ray diffraction line profile analysis showed that the 0.5 at % P-doped ZnO film showed much higher microstrain than the 1.0 at % P-doped ZnO film, which indicated that the phosphorus atoms were segregated with increasing P atomic percentage. Finally, post-growth related defects in strained-Si/SiGe films were investigated. Postgrowth processes used in this work included high temperature N2

  11. Fundamental radiation effects in αAg-Zn alloys: Zener relaxation, study of the mobility of point defects and the evolution of their populations in a particle flux

    International Nuclear Information System (INIS)

    Halbwachs, Michel.

    1977-01-01

    After a recall on the physical effects of radiations, a model used to describe the defect populations produced in a fast particle flux is presented. The experimental devices used and the measurements carried out on a solid solution of αAg-Zn are described. The results obtained in an electron flux are compared with the forecastings of the theoretical models. The mobility and the apparent recombination radius of vacancies and autointerstitials, the absorption efficiency of dislocations in regard to point defects and the participation of autointerstitials to short-range order are studied. A similar study carried out under neutron irradiation is reported. The influence of neutron doses and temperature on atomic mobility is investigated. An experiment carried out under gamma photon irradiation enables a comparison to be made between the creation of defects by gamma photons and electrons [fr

  12. Displacement cascades and defect annealing in tungsten, Part III: The sensitivity of cascade annealing in tungsten to the values of kinetic parameters

    Energy Technology Data Exchange (ETDEWEB)

    Nandipati, Giridhar; Setyawan, Wahyu; Heinisch, Howard L.; Roche, Kenneth J.; Kurtz, Richard J.; Wirth, Brian D.

    2015-07-01

    Object kinetic Monte Carlo (OKMC) simulations have been performed to investigate various aspects of cascade aging in bulk tungsten and to determine the sensitivity of the results to the kinetic parameters. The primary focus is on how the kinetic parameters affect the initial recombination of defects in the first few ns of a simulation. The simulations were carried out using the object kinetic Monte Carlo (OKMC) code KSOME (kinetic simulations of microstructure evolution), using a database of cascades obtained from results of molecular dynamics (MD) simulations at various primary knock-on atom (PKA) energies and directions at temperatures of 300, 1025 and 2050 K. The OKMC model was parameterized using defect migration barriers and binding energies from ab initio calculations. Results indicate that, due to the disparate mobilities of SIA and vacancy clusters in tungsten, annealing is dominated by SIA migration even at temperatures as high as 2050 K. For 100 keV cascades initiated at 300 K recombination is dominated by annihilation of large defect clusters. But for all other PKA energies and temperatures most of the recombination is due to the migration and rotation of small SIA clusters, while all the large SIA clusters escape the cubic simulation cell. The inverse U-shape behavior exhibited by the annealing efficiency as a function of temperature curve, especially for cascades of large PKA energies, is due to asymmetry in SIA and vacancy clustering assisted by the large difference in mobilities of SIAs and vacancies. This annealing behavior is unaffected by the dimensionality of SIA migration persists over a broad range of relative mobilities of SIAs and vacancies.

  13. Point defects as a test ground for the local density approximation +U theory: Mn, Fe, and V{sub Ga} in GaN

    Energy Technology Data Exchange (ETDEWEB)

    Volnianska, O.; Zakrzewski, T. [Institute of Physics PAS, 02-668 Warsaw (Poland); Boguslawski, P. [Institute of Physics PAS, 02-668 Warsaw (Poland); Institute of Physics, Kazimierz Wielki University, 85-072 Bydgoszcz (Poland)

    2014-09-21

    Electronic structure of the Mn and Fe ions and of the gallium vacancy V{sub Ga} in GaN was analysed within the GGA + U approach. First, the +U term was treated as a free parameter, and applied to p(N), d(Mn), and d(Fe). The band gap of GaN is reproduced for U(N) ≈ 4 eV. The electronic structure of defect states was found to be more sensitive to the value of U than that of the bulk states. Both the magnitude and the sign of the U-induced energy shifts of levels depend on occupancies, and thus on the defect charge state. The energy shifts also depend on the hybridization between defect and host states, and thus are different for different level symmetries. In the case of V{sub Ga}, these effects lead to stabilization of spin polarization and the “negative-U{sub eff}” behavior. The values of Us were also calculated using the linear response approach, which gives U(Fe) ≈ U(Mn) ≈ 4 eV. This reproduces well the results of previous hybrid functionals calculations. However, the best agreement with the experimental data is obtained for vanishing or even negative U(Fe) and U(Mn)

  14. Measurement and simulation of the effects of ion-induced defects on ion beam-induced charge (IBIC) measurements in Si schottky diodes

    International Nuclear Information System (INIS)

    Hearne, S.M.; Lay, M.D.H.; Jamieson, D.N.

    2004-01-01

    Full text: The Ion Beam Induced Charge (IBIC) technique is a very sensitive tool for investigating the electronic properties of semiconductor materials and devices. However, obtaining quantitative information from IBIC experiments requires an accurate model of the materials properties. The interaction of high energy ions with crystalline materials is known to create point defects within the crystal. A significant proportion of defects introduced by the interaction of the ion with the crystal are electrically active and are therefore an important consideration when undertaking an IBIC experiment. The goal of this work is to investigate the possibility of including the relevant defect parameters in computer simulations of the IBIC experiment implemented using Technology Computer Aided Design (TCAD) software. We will present the results from an IBIC study on Si Schottky diodes using 1 MeV alphas. A reduction of greater than 50% in the detected IBIC signal was observed for fluences greater than 5x10 10 He + /cm 2 . The trap parameters following ion irradiation were determined experimentally using DLTS. Comparisons between the experimental IBIC results and TCAD simulations will be discussed

  15. Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

    International Nuclear Information System (INIS)

    Morozov, A.N.; Mikryukova, E.V.; Bublik, V.T.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

    1988-01-01

    Effect of alloying with donor (S,Ge) and acceptor (Zn) impurities on the concentration of proper point defects in monocrystals InP grown up from equiatomic (relative to In and P) melts by the Czochralski method under flux layer is investigated. Changes in boundary positions of the InP homogeneity region caused by alloying are analysed on the basis of experimental results according to the precision measurement of the lattice parameter and crystal density, as well as measurements of the Hall concentration of charge carriers and their mobility. The concentrations of Frenkel nonequilibrium (V in -In i ) defects formed in the initial stage of indium solid solution decomposition in InP are estimated

  16. Selected topics in high temperature chemistry defect chemistry of solids

    CERN Document Server

    Johannesen, Ø

    2013-01-01

    The properties of materials at high temperature play a vital role in their processing and practical use. The real properties of materials at elevated temperatures are very often governed by defects in their structure. Lattice defects may consist of point defects like vacancies, interstitial atoms or substituted atoms. These classes are discussed in general and specifically for oxides, nitrides, carbides and sulfides. Defect aggregates, shear structures and adaptive structures are also described. Special attention is paid to hydrogen defects which seem to play an important role in several mater

  17. ONLINE TECHNOLOGICAL MONITORING OF INSULATION DEFECTS IN ENAMELED WIRES

    Directory of Open Access Journals (Sweden)

    V. M. Zolotaryov

    2017-08-01

    Full Text Available In this paper the authors used non-destructive technological monitoring of defects insulation enameled wire with poliimid polymer. The paper is devoted to the statistical method for processing, comparison and analysis of results of measurements of parameters of insulation of enameled wire because of mathematical model of trend for application in active technological monitoring is developed; the recommendations for parameters of such monitoring are used. It is theoretically justified and the possibility of determination of dependence of the error on the velocity of movement of a wire for want of quantifying of defects in enameled insulation by non-destructive tests by high voltage. The dependence of average value of amount of defects for enameled wire with two-sheeted poliimid insulation in a range of nominal diameter 0.56 mm is experimentally determined. The technological monitoring purpose is to reduce the quantifying defects of enameled insulation.

  18. Magnetoencephalography signals are influenced by skull defects.

    Science.gov (United States)

    Lau, S; Flemming, L; Haueisen, J

    2014-08-01

    Magnetoencephalography (MEG) signals had previously been hypothesized to have negligible sensitivity to skull defects. The objective is to experimentally investigate the influence of conducting skull defects on MEG and EEG signals. A miniaturized electric dipole was implanted in vivo into rabbit brains. Simultaneous recording using 64-channel EEG and 16-channel MEG was conducted, first above the intact skull and then above a skull defect. Skull defects were filled with agar gels, which had been formulated to have tissue-like homogeneous conductivities. The dipole was moved beneath the skull defects, and measurements were taken at regularly spaced points. The EEG signal amplitude increased 2-10 times, whereas the MEG signal amplitude reduced by as much as 20%. The EEG signal amplitude deviated more when the source was under the edge of the defect, whereas the MEG signal amplitude deviated more when the source was central under the defect. The change in MEG field-map topography (relative difference measure, RDM(∗)=0.15) was geometrically related to the skull defect edge. MEG and EEG signals can be substantially affected by skull defects. MEG source modeling requires realistic volume conductor head models that incorporate skull defects. Copyright © 2013 International Federation of Clinical Neurophysiology. Published by Elsevier Ireland Ltd. All rights reserved.

  19. The pinning property of Bi-2212 single crystals with columnar defects

    International Nuclear Information System (INIS)

    Okamura, Kazunori; Kiuchi, Masaru; Otabe, Edmund Soji; Yasuda, Takashi; Matsushita, Teruo; Okayasu, Satoru

    2004-01-01

    It is qualitatively understood that the condensation energy density in oxide superconductors, which is one of the essential parameters for determining their pinning strength, becomes large with increasing dimensionality of the superconductor. However, the condensation energy density has not yet been evaluated quantitatively. Its value can be estimated from the elementary pinning force of a known defect. Columnar defects created by heavy ion irradiation are candidates for being such defects. That is, the size and number density of columnar defects can be given. In addition, it is known that two-dimensional vortices like those in Bi-2212 are forced into three-dimensional states by these defects in a magnetic field parallel to the defects. Thus, the condensation energy density can be estimated from the pinning property of the columnar defects even for two-dimensional superconductors. A similar analysis was performed also for three-dimensional Y-123. A discussion is given of the relationship between the condensation energy density and the anisotropy parameter estimated from measurements of anisotropic resistivity and peak field

  20. Defect identification for the AsGa family

    International Nuclear Information System (INIS)

    Overhof, H.; Spaeth, J.-M.

    2003-01-01

    The As Ga family consists of at least four distinctly different point defects including the technologically important EL2 defect. While the different members are easily distinguished from their MCDA spectra, the differences of the hf and shf interactions as derived from ODEPR and ODENDOR are rather small. We present ab initio calculations using the LMTO-ASA Green's function method for a variety of defect models that might be relevant for the identification of As Ga -related defects. We confirm the identification of the isolated As Ga and show that the {As Ga -X 2 } defect must be identified with the nearest-neighbor antistructure pair rather than with the {As Ga -V As } pair. For the {As Ga -X 1 } defect a distant antistructure pair is a likely candidate. For the EL2, the most important member of the As Ga family, we have not found a conclusive defect model. The recent ODENDOR data are similar to those of the distant orthorhombic {As Ga -V Ga } pair, which, however is a triple acceptor and not a donor

  1. Deterministic Role of Collision Cascade Density in Radiation Defect Dynamics in Si

    Science.gov (United States)

    Wallace, J. B.; Aji, L. B. Bayu; Shao, L.; Kucheyev, S. O.

    2018-05-01

    The formation of stable radiation damage in solids often proceeds via complex dynamic annealing (DA) processes, involving point defect migration and interaction. The dependence of DA on irradiation conditions remains poorly understood even for Si. Here, we use a pulsed ion beam method to study defect interaction dynamics in Si bombarded in the temperature range from ˜-30 ° C to 210 °C with ions in a wide range of masses, from Ne to Xe, creating collision cascades with different densities. We demonstrate that the complexity of the influence of irradiation conditions on defect dynamics can be reduced to a deterministic effect of a single parameter, the average cascade density, calculated by taking into account the fractal nature of collision cascades. For each ion species, the DA rate exhibits two well-defined Arrhenius regions where different DA mechanisms dominate. These two regions intersect at a critical temperature, which depends linearly on the cascade density. The low-temperature DA regime is characterized by an activation energy of ˜0.1 eV , independent of the cascade density. The high-temperature regime, however, exhibits a change in the dominant DA process for cascade densities above ˜0.04 at.%, evidenced by an increase in the activation energy. These results clearly demonstrate a crucial role of the collision cascade density and can be used to predict radiation defect dynamics in Si.

  2. Optical defect modes in chiral liquid crystals

    International Nuclear Information System (INIS)

    Belyakov, V. A.; Semenov, S. V.

    2011-01-01

    An analytic approach to the theory of optical defect modes in chiral liquid crystals (CLCs) is developed. The analytic study is facilitated by the choice of the problem parameters. Specifically, an isotropic layer (with the dielectric susceptibility equal to the average CLC dielectric susceptibility) sandwiched between two CLC layers is studied. The chosen model allows eliminating the polarization mixing and reducing the corresponding equations to the equations for light of diffracting polarization only. The dispersion equation relating the defect mode (DM) frequency to the isotropic layer thickness and an analytic expression for the field distribution in the DM structure are obtained and the corresponding dependences are plotted for some values of the DM structure parameters. Analytic expressions for the transmission and reflection coefficients of the DM structure (CLC-defect layer-CLC) are presented and analyzed for nonabsorbing, absorbing, and amplifying CLCs. The anomalously strong light absorption effect at the DM frequency is revealed. The limit case of infinitely thick CLC layers is considered in detail. It is shown that for distributed feedback lasing in a defect structure, adjusting the lasing frequency to the DM frequency results in a significant decrease in the lasing threshold. The DM dispersion equations are solved numerically for typical values of the relevant parameters. Our approach helps clarify the physics of the optical DMs in CLCs and completely agrees with the corresponding results of the previous numerical investigations.

  3. Atomistic simulation of ideal shear strength, point defects, and screw dislocations in bcc transition metals: Mo as a prototype

    International Nuclear Information System (INIS)

    Xu, W.; Moriarty, J.A.

    1996-01-01

    Using multi-ion interatomic potentials derived from first-principles generalized pseudopotential theory, we have studied ideal shear strength, point defects, and screw dislocations in the prototype bcc transition metal molybdenum (Mo). Many-body angular forces, which are important to the structural and mechanical properties of such central transition metals with partially filled d bands, are accounted for in the present theory through explicit three- and four-ion potentials. For the ideal shear strength of Mo, our computed results agree well with those predicted by full electronic-structure calculations. For point defects in Mo, our calculated vacancy-formation and activation energies are in excellent agreement with experimental results. The energetics of six self-interstitial configurations have also been investigated. The left-angle 110 right-angle split dumbbell interstitial is found to have the lowest formation energy, in agreement with the configuration found by x-ray diffuse scattering measurements. In ascending order, the sequence of energetically stable interstitials is predicted to be left-angle 110 right-angle split dumbbell, crowdion, left-angle 111 right-angle split dumbbell, tetrahedral site, left-angle 001 right-angle split dumbbell, and octahedral site. In addition, the migration paths for the left-angle 110 right-angle dumbbell self-interstitial have been studied. The migration energies are found to be 3 endash 15 times higher than previous theoretical estimates obtained using simple radial-force Finnis-Sinclair potentials. Finally, the atomic structure and energetics of left-angle 111 right-angle screw dislocations in Mo have been investigated. We have found that the so-called open-quote open-quote easy close-quote close-quote core configuration has a lower formation energy than the open-quote open-quote hard close-quote close-quote one, consistent with previous theoretical studies. (Abstract Truncated)

  4. Evaluation procedure of creep-fatigue defect growth in high temperature condition and application

    International Nuclear Information System (INIS)

    Park, Chang Gyu; Kim, Jong Bum; Lee, Jae Han

    2003-12-01

    This study proposed the evaluation procedure of creep-fatigue defect growth on the high-temperature cylindrical structure applicable to the KALIMER, which is developed by KAERI. Parameters used in creep defect growth and the evaluation codes with these parameters were analyzed. In UK, the evaluation procedure of defect initiation and growth were proposed with R5/R6 code. In Japan, simple evauation method was proposed by JNC. In France, RCC-MR A16 code which was evaluation procedure of the creep-fatigue defect initiation and growth related to leak before break was developed, and equations related to load conditions were modified lately. As an application example, the creep-fatigue defect growth on circumferential semi-elliptical surface defect in high temperature cylindrical structure was evaluated by RCC-MR A16

  5. WMAP constraints on inflationary models with global defects

    International Nuclear Information System (INIS)

    Bevis, Neil; Hindmarsh, Mark; Kunz, Martin

    2004-01-01

    We use the cosmic microwave background angular power spectra to place upper limits on the degree to which global defects may have aided cosmic structure formation. We explore this under the inflationary paradigm, but with the addition of textures resulting from the breaking of a global O(4) symmetry during the early stages of the Universe. As a measure of their contribution, we use the fraction of the temperature power spectrum that is attributed to the defects at a multipole of 10. However, we find a parameter degeneracy enabling a fit to the first-year WMAP data to be made even with a significant defect fraction. This degeneracy involves the baryon fraction and the Hubble constant, plus the normalization and tilt of the primordial power spectrum. Hence, constraints on these cosmological parameters are weakened. Combining the WMAP data with a constraint on the physical baryon fraction from big bang nucleosynthesis calculations and high-redshift deuterium abundance limits the extent of the degeneracy and gives an upper bound on the defect fraction of 0.13 (95% confidence)

  6. Adsorption and Photodesorption of CO from Charged Point Defects on TiO 2 (110)

    Energy Technology Data Exchange (ETDEWEB)

    Mu, Rentao; Dahal, Arjun P.; Wang, Zhitao; Dohnalek, Zdenek; Kimmel, Gregory A.; Petrik, Nikolay G.; Lyubinetsky, Igor V.

    2017-09-12

    Adsorption and photodesorption of weakly-bound carbon monoxide, CO, from reduced and hydroxylated rutile TiO2(110) (r- and h- TiO2(110)) at sub-monolayer coverages is studied with atomically-resolved scanning tunneling microscopy (STM) along with ensemble-averaged temperature-programmed desorption (TPD) and angle-resolved photon-stimulated desorption (PSD) at low temperatures ( 50 K). STM data weighted by the concentration of each kind of adsorption sites on r-TiO2(110) give an adsorption probability which is the highest for the bridging oxygen vacancies (VO) and very low for the Ti5c sites closest to VO. Occupancy of the remaining Ti5c sites with CO is significant, but smaller than for VO. The probability distribution for the different adsorption sites corresponds to a very small difference in CO adsorption energies: < 0.02 eV. We also find that UV irradiation stimulates both diffusion and desorption of CO at low temperature. CO photodesorbs primarily from the vacancies with a bi-modal angular distribution. In addition to a major, normal to the surface component, there is a broader cosine component indicating scattering from the surface which likely also leads to photo-stimulated diffusion. Hydroxylation of VO’s does not significantly change the CO PSD yield and angular distribution, indicating that not atomic but rather electronic surface defects are involved in the site-specific PSD process. We suggest that photodesorption can be initiated by recombination of photo-generated holes with excess unpaired electrons localized near the surface point-defect (either VO or bridging hydroxyl), leading to the surface atoms rearrangement and ejection of the weakly-bound CO molecules.

  7. Test and Diagnosis for Small-Delay Defects

    CERN Document Server

    Tehranipoor, Mohammad; Chakrabarty, Krishnendu

    2012-01-01

    This book introduces new techniques for detecting and diagnosing small-delay defects (SDD) in integrated circuits. Although this sort of timing defect is commonly found in integrated circuits manufactured with nanometer technology, this will be the first book to introduce effective and scalable methodologies for screening and diagnosing small-delay defects, including important parameters such as process variations, crosstalk, and power supply noise. This book presents new techniques and methodologies to improve overall SDD detection with very small pattern sets. These methods can result in pattern counts as low as a traditional 1-detect pattern set and long path sensitization and SDD detection similar to or even better than n-detect or timing-aware pattern sets. The important design parameters and pattern-induced noises such as process variations,power supply noise (PSN) and crosstalk are taken into account in the methodologies presented. A diagnostic flow is also presented to identify whether the failure is ...

  8. Additive manufacturing for in situ repair of osteochondral defects

    International Nuclear Information System (INIS)

    Cohen, Daniel L; Lipton, Jeffrey I; Bonassar, Lawrence J; Lipson, Hod

    2010-01-01

    Tissue engineering holds great promise for injury repair and replacement of defective body parts. While a number of techniques exist for creating living biological constructs in vitro, none have been demonstrated for in situ repair. Using novel geometric feedback-based approaches and through development of appropriate printing-material combinations, we demonstrate the in situ repair of both chondral and osteochondral defects that mimic naturally occurring pathologies. A calf femur was mounted in a custom jig and held within a robocasting-based additive manufacturing (AM) system. Two defects were induced: one a cartilage-only representation of a grade IV chondral lesion and the other a two-material bone and cartilage fracture of the femoral condyle. Alginate hydrogel was used for the repair of cartilage; a novel formulation of demineralized bone matrix was used for bone repair. Repair prints for both defects had mean surface errors less than 0.1 mm. For the chondral defect, 42.8 ± 2.6% of the surface points had errors that were within a clinically acceptable error range; however, with 1 mm path planning shift, an estimated ∼75% of surface points could likely fall within the benchmark envelope. For the osteochondral defect, 83.6 ± 2.7% of surface points had errors that were within clinically acceptable limits. In addition to implications for minimally invasive AM-based clinical treatments, these proof-of-concept prints are some of the only in situ demonstrations to-date, wherein the substrate geometry was unknown a priori. The work presented herein demonstrates in situ AM, suggests potential biomedical applications and also explores in situ-specific issues, including geometric feedback, material selection and novel path planning techniques.

  9. Six-dimensional Origin of $\\mathcal{N}=4$ SYM with Duality Defects

    CERN Document Server

    Assel, Benjamin

    2016-12-14

    We study the topologically twisted compactification of the 6d $(2,0)$ M5-brane theory on an elliptically fibered K\\"ahler three-fold preserving two supercharges. We show that upon reducing on the elliptic fiber, the 4d theory is $\\mathcal{N}=4$ Super-Yang Mills, with varying complexified coupling $\\tau$, in the presence of defects. For abelian gauge group this agrees with the so-called duality twisted theory, and we determine a non-abelian generalization to $U(N)$. When the elliptic fibration is singular, the 4d theory contains 3d walls (along the branch-cuts of $\\tau$) and 2d surface defects, around which the 4d theory undergoes $SL(2,\\mathbb{Z})$ duality transformations. Such duality defects carry chiral fields, which from the 6d point of view arise as modes of the two-form $B$ in the tensor multiplet. Each duality defect has a flavor symmetry associated to it, which is encoded in the structure of the singular elliptic fiber above the defect. Generically 2d surface defects will intersect in points in 4d, wh...

  10. Random defect lines in conformal minimal models

    International Nuclear Information System (INIS)

    Jeng, M.; Ludwig, A.W.W.

    2001-01-01

    We analyze the effect of adding quenched disorder along a defect line in the 2D conformal minimal models using replicas. The disorder is realized by a random applied magnetic field in the Ising model, by fluctuations in the ferromagnetic bond coupling in the tricritical Ising model and tricritical three-state Potts model (the phi 12 operator), etc. We find that for the Ising model, the defect renormalizes to two decoupled half-planes without disorder, but that for all other models, the defect renormalizes to a disorder-dominated fixed point. Its critical properties are studied with an expansion in ε∝1/m for the mth Virasoro minimal model. The decay exponents X N =((N)/(2))1-((9(3N-4))/(4(m+1) 2 ))+O((3)/(m+1)) 3 of the Nth moment of the two-point function of phi 12 along the defect are obtained to 2-loop order, exhibiting multifractal behavior. This leads to a typical decay exponent X typ =((1)/(2))1+((9)/((m+1) 2 ))+O((3)/(m+1)) 3 . One-point functions are seen to have a non-self-averaging amplitude. The boundary entropy is larger than that of the pure system by order 1/m 3 . As a byproduct of our calculations, we also obtain to 2-loop order the exponent X-tilde N =N1-((2)/(9π 2 ))(3N-4)(q-2) 2 +O(q-2) 3 of the Nth moment of the energy operator in the q-state Potts model with bulk bond disorder

  11. Advanced defect classification by smart sampling, based on sub-wavelength anisotropic scatterometry

    Science.gov (United States)

    van der Walle, Peter; Kramer, Esther; Ebeling, Rob; Spruit, Helma; Alkemade, Paul; Pereira, Silvania; van der Donck, Jacques; Maas, Diederik

    2018-03-01

    We report on advanced defect classification using TNO's RapidNano particle scanner. RapidNano was originally designed for defect detection on blank substrates. In detection-mode, the RapidNano signal from nine azimuth angles is added for sensitivity. In review-mode signals from individual angles are analyzed to derive additional defect properties. We define the Fourier coefficient parameter space that is useful to study the statistical variation in defect types on a sample. By selecting defects from each defect type for further review by SEM, information on all defects can be obtained efficiently.

  12. Implications of permeation through intrinsic defects in graphene on the design of defect-tolerant membranes for gas separation.

    Science.gov (United States)

    Boutilier, Michael S H; Sun, Chengzhen; O'Hern, Sean C; Au, Harold; Hadjiconstantinou, Nicolas G; Karnik, Rohit

    2014-01-28

    Gas transport through intrinsic defects and tears is a critical yet poorly understood phenomenon in graphene membranes for gas separation. We report that independent stacking of graphene layers on a porous support exponentially decreases flow through defects. On the basis of experimental results, we develop a gas transport model that elucidates the separate contributions of tears and intrinsic defects on gas leakage through these membranes. The model shows that the pore size of the porous support and its permeance critically affect the separation behavior, and reveals the parameter space where gas separation can be achieved regardless of the presence of nonselective defects, even for single-layer membranes. The results provide a framework for understanding gas transport in graphene membranes and guide the design of practical, selectively permeable graphene membranes for gas separation.

  13. Surface Defects in Sheet Metal Forming: a Simulative Laboratory Device and Comparison with FE Analysis

    Science.gov (United States)

    Thuillier, Sandrine; Le Port, Alban; Manach, Pierre-Yves

    2011-08-01

    Surface defects are small concave imperfections that can develop during forming on outer convex panels of automotive parts like doors. They occur during springback steps, after drawing in the vicinity of bending over a curved line and flanging/hemming in the vicinity of the upper corner of a door. They can alter significantly the final quality of the automobile and it is of primary importance to deal with them as early as possible in the design of the forming tools. The aim of this work is to reproduce at the laboratory scale such a defect, in the case of the flanging along a curved edge, made of two orthogonal straight part of length 50 mm and joint by a curved line. A dedicated device has been designed and steel samples were tested. Each sample was measured initially (after laser cutting) and after flanging, with a 3D measuring machine. 2D profiles were extracted and the curvature was calculated. Surface defects were defined between points where the curvature sign changed. Isovalues of surface defect depth could then be plotted, thus displaying also the spatial geometry on the part surface. An experimental database has been created on the influence of process parameters like the flanging height and the flanging radius. Numerical simulations have been performed with the finite element code Abaqus to predict the occurrence of such surface defects and to analyze stress and strain distribution within the defect area.

  14. Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Yoshihara, Nakaaki [Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Mizushima, Yoriko [Devices and Materials Labs Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Kim, Youngsuk [ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Disco Corporation, Ota, Tokyo 143-8580 (Japan); Nakamura, Tomoji [Devices and Materials Labs Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Ohba, Takayuki [ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Oshima, Nagayasu; Suzuki, Ryoichi [Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

    2014-10-07

    Vacancy-type defects introduced by the grinding of Czochralski-grown Si wafers were studied using monoenergetic positron beams. Measurements of Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons showed that vacancy-type defects were introduced in the surface region (<98 nm), and the major defect species were identified as (i) relatively small vacancies incorporated in dislocations and (ii) large vacancy clusters. Annealing experiments showed that the defect concentration decreased with increasing annealing temperature in the range between 100 and 500°C. After 600–700°C annealing, the defect-rich region expanded up to about 170 nm, which was attributed to rearrangements of dislocation networks, and a resultant emission of point defects toward the inside of the sample. Above 800°C, the stability limit of those vacancies was reached and they started to disappear. After the vacancies were annealed out (900°C), oxygen-related defects were the major point defects and they were located at <25 nm.

  15. Defect production in simulated cascades: Cascade quenching and short-term annealing

    International Nuclear Information System (INIS)

    Heinisch, H.L.

    1983-01-01

    Defect production in displacement cascades in copper has been modeled using the MARLOWE code to generate cascades and the stochastic annealing code ALSOME to simulate cascade quenching and short-term annealing of isolated cascades. Quenching is accomplished by using exaggerated values for defect mobilities and for critical reaction distances in ALSOME for a very short time. The quenched cascades are then short-term annealed with normal parameter values. The quenching parameter values were empirically determined by comparison with results of resistivity measurements. Throughout the collisional, quenching and short-term annealing phases of cascade development, the high energy cascades continue to behave as a collection of independent lower energy lobes. For recoils above about 30 keV the total number of defects and the numbers of free defects scale with the damage energy. As the energy decreases from 30 keV, defect production varies with the changing nature of the cascade configuration, resulting in more defects per unit damage energy. The simulated annealing of a low fluence of interacting cascades revealed an interstitial shielding effect on depleted zones during Stage I recovery. (orig.)

  16. Continuous improvements of defectivity rates in immersion photolithography via functionalized membranes in point-of-use photochemical filtration

    Science.gov (United States)

    D'Urzo, Lucia; Bayana, Hareen; Vandereyken, Jelle; Foubert, Philippe; Wu, Aiwen; Jaber, Jad; Hamzik, James

    2017-03-01

    Specific "killer-defects", such as micro-line-bridges are one of the key challenges in photolithography's advanced applications, such as multi-pattern. These defects generate from several sources and are very difficult to eliminate. Pointof-use filtration (POU) plays a crucial role on the mitigation, or elimination, of such defects. Previous studies have demonstrated how the contribution of POU filtration could not be studied independently from photoresists design and track hardware settings. Specifically, we investigated how an effective combination of optimized photoresist, filtration rate, filtration pressure, membrane and device cleaning, and single and multilayer filter membranes at optimized pore size could modulate the occurrence of such defects [1, 2, 3 and 4]. However, the ultimate desired behavior for POU filtration is the selective retention of defect precursor molecules contained in commercially available photoresist. This optimal behavior can be achieved via customized membrane functionalization. Membrane functionalization provides additional non-sieving interactions which combined with efficient size exclusion can selectively capture certain defect precursors. The goal of this study is to provide a comprehensive assessment of membrane functionalization applied on an asymmetric ultra-high molecular weight polyethylene (UPE) membrane at different pore size. Defectivity transferred in a 45 nm line 55 nm space (45L/55S) pattern, created through 193 nm immersion (193i) lithography with a positive tone chemically amplified resist (PT-CAR), has been evaluated on organic under-layer coated wafers. Lithography performance, such as critical dimensions (CD), line width roughness (LWR) and focus energy matrix (FEM) is also assessed.

  17. Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

    Science.gov (United States)

    Roldán, J. B.; Miranda, E.; González-Cordero, G.; García-Fernández, P.; Romero-Zaliz, R.; González-Rodelas, P.; Aguilera, A. M.; González, M. B.; Jiménez-Molinos, F.

    2018-01-01

    A multivariate analysis of the parameters that characterize the reset process in Resistive Random Access Memory (RRAM) has been performed. The different correlations obtained can help to shed light on the current components that contribute in the Low Resistance State (LRS) of the technology considered. In addition, a screening method for the Quantum Point Contact (QPC) current component is presented. For this purpose, the second derivative of the current has been obtained using a novel numerical method which allows determining the QPC model parameters. Once the procedure is completed, a whole Resistive Switching (RS) series of thousands of curves is studied by means of a genetic algorithm. The extracted QPC parameter distributions are characterized in depth to get information about the filamentary pathways associated with LRS in the low voltage conduction regime.

  18. Understanding the defect structure of solution grown zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Liew, Laura-Lynn [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Sankar, Gopinathan, E-mail: g.sankar@ucl.ac.uk [Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Handoko, Albertus D. [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); Goh, Gregory K.L., E-mail: g-goh@imre.a-star.edu.sg [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Kohara, Shinji [Japan Synchrotron Radiation Research Institute (JASRI), Mikazuki, Sayo, Hyogo 679-5198 (Japan)

    2012-05-15

    Zinc oxide (ZnO) is a wide bandgap semiconducting oxide with many potential applications in various optoelectronic devices such as light emitting diodes (LEDs) and field effect transistors (FETs). Much effort has been made to understand the ZnO structure and its defects. However, one major issue in determining whether it is Zn or O deficiency that provides ZnO its unique properties remains. X-ray absorption spectroscopy (XAS) is an ideal, atom specific characterization technique that is able to probe defect structure in many materials, including ZnO. In this paper, comparative studies of bulk and aqueous solution grown ({<=}90 Degree-Sign C) ZnO powders using XAS and x-ray pair distribution function (XPDF) techniques are described. The XAS Zn-Zn correlation and XPDF results undoubtedly point out that the solution grown ZnO contains Zn deficiency, rather than the O deficiency that were commonly reported. This understanding of ZnO short range order and structure will be invaluable for further development of solid state lighting and other optoelectronic device applications. - Graphical abstract: Highlights: Black-Right-Pointing-Pointer ZnO powders have been synthesized through an aqueous solution method. Black-Right-Pointing-Pointer Defect structure studied using XAS and XPDF. Black-Right-Pointing-Pointer Zn-Zn correlations are less in the ZnO powders synthesized in solution than bulk. Black-Right-Pointing-Pointer Zn vacancies are present in the powders synthesized. Black-Right-Pointing-Pointer EXAFS and XPDF, when used complementary, are useful characterization techniques.

  19. Study of irradiation induced defects in silicon

    International Nuclear Information System (INIS)

    Pal, Gayatri; Sebastian, K.C.; Somayajulu, D.R.S.; Chintalapudi, S.N.

    2000-01-01

    Pure high resistivity (6000 ohm-cm) silicon wafers were recoil implanted with 1.8 MeV 111 In ions. As-irradiated wafers showed a 13 MHz quadrupole interaction frequency, which was not observed earlier. The annealing behaviour of these defects in the implanted wafers was studied between room temperature and 1073 K. At different annealing temperatures two more interaction frequencies corresponding to defect complexes D2 and D3 are observed. Even though the experimental conditions were different, these are identical to the earlier reported ones. Based on an empirical point charge model calculation, an attempt is made to identify the configuration of these defect complexes. (author)

  20. Effects of ZnO nanowire synthesis parameters on the photovoltaic performance of dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Juneui; Myoung, Jihyun; Lim, Sangwoo, E-mail: swlim@yonsei.ac.kr

    2012-06-30

    Determination of the effects of ZnO nanowires on the efficiency of ZnO nanowire-based dye-sensitized solar cells (DSSCs) is important. In this study, we determined the effects of different OH{sup -} precursors, concentrations, the ratio of zinc nitrate to hexamethylene tetramine (HMT), and the hydrothermal synthesis temperature on the physical, crystal, and optical properties of ZnO nanowires and investigated the performance of the resulting DSSCs. We observed that ZnO nanowires synthesized using an equimolar ratio of HMT to zinc nitrate yielded a DSSC with high incident photon-to-current efficiency (IPCE), cell efficiency, short circuit current density (J{sub sc}), and fill factor (FF), and low ZnO-dye-electrolyte interface resistance due to an increased amount of dye and a decreased density of defects. Furthermore, ZnO nanowires made using optimal concentrations and ratios of zinc nitrate to HMT had a high surface area and low defect density. All the photovoltaic performance parameters of DSSCs assessed such as IPCE, cell efficiency, J{sub sc}, open circuit potential (V{sub oc}), and FF increased with synthesis temperature, which was related to a decrease in the resistance at the ZnO-dye-electrolyte interface. We attributed these results to an increased amount of dye facilitated by a large nanowire surface area and fast electron transfer because of the improved crystalline structure of the ZnO nanowires and their low defect density. By optimizing the ZnO nanowires, we increased DSSC efficiency to 0.26% using ZnO nanowires synthesized with 25 mM of both zinc nitrate and HMT at 90 Degree-Sign C, while only a 0.02% increase in efficiency was obtained when NH{sub 4}OH was used as OH{sup -} precursor. - Highlights: Black-Right-Pointing-Pointer Fabrication of ZnO nanowire-based dye-sensitized solar cells (DSSCs) Black-Right-Pointing-Pointer Correlation of synthesis parameters with ZnO nanowires' properties and DSSC performance Black-Right-Pointing

  1. Bootstrap equations for N=4 SYM with defects

    Energy Technology Data Exchange (ETDEWEB)

    Liendo, Pedro [IMIP, Humboldt-Universität zu Berlin, IRIS Adlershof,Zum Großen Windkanal 6, 12489 Berlin (Germany); Meneghelli, Carlo [Simons Center for Geometry and Physics, Stony Brook University,Stony Brook, NY 11794-3636 (United States)

    2017-01-27

    This paper focuses on the analysis of 4dN=4 superconformal theories in the presence of a defect from the point of view of the conformal bootstrap. We will concentrate first on the case of codimension one, where the defect is a boundary that preserves half of the supersymmetry. After studying the constraints imposed by supersymmetry, we will obtain the Ward identities associated to two-point functions of (1/2)-BPS operators and write their solution as a superconformal block expansion. Due to a surprising connection between spacetime and R-symmetry conformal blocks, our results not only apply to 4dN=4 superconformal theories with a boundary, but also to three more systems that have the same symmetry algebra: 4dN=4 superconformal theories with a line defect, 3dN=4 superconformal theories with no defect, and OSP(4{sup ∗}|4) superconformal quantum mechanics. The superconformal algebra implies that all these systems possess a closed subsector of operators in which the bootstrap equations become polynomial constraints on the CFT data. We derive these truncated equations and initiate the study of their solutions.

  2. Bootstrap equations for N=4 SYM with defects

    International Nuclear Information System (INIS)

    Liendo, Pedro; Meneghelli, Carlo

    2017-01-01

    This paper focuses on the analysis of 4dN=4 superconformal theories in the presence of a defect from the point of view of the conformal bootstrap. We will concentrate first on the case of codimension one, where the defect is a boundary that preserves half of the supersymmetry. After studying the constraints imposed by supersymmetry, we will obtain the Ward identities associated to two-point functions of (1/2)-BPS operators and write their solution as a superconformal block expansion. Due to a surprising connection between spacetime and R-symmetry conformal blocks, our results not only apply to 4dN=4 superconformal theories with a boundary, but also to three more systems that have the same symmetry algebra: 4dN=4 superconformal theories with a line defect, 3dN=4 superconformal theories with no defect, and OSP(4 ∗ |4) superconformal quantum mechanics. The superconformal algebra implies that all these systems possess a closed subsector of operators in which the bootstrap equations become polynomial constraints on the CFT data. We derive these truncated equations and initiate the study of their solutions.

  3. Induced Magnetic Moment in Defected Single-Walled Carbon Nanotubes

    International Nuclear Information System (INIS)

    Liu Hong

    2006-01-01

    The existence of a large induced magnetic moment in defect single-walled carbon nanotube(SWNT) is predicted using the Green's function method. Specific to this magnetic moment of defect SWNT is its magnitude which is several orders of magnitude larger than that of perfect SWNT. The induced magnetic moment also shows certain remarkable features. Therefore, we suggest that two pair-defect orientations in SWNT can be distinguished in experiment through the direction of the induced magnetic moment at some Specific energy points

  4. PAT challenges routine techniques on defect spectroscopy in material science

    International Nuclear Information System (INIS)

    Badawi, E.A.

    2005-01-01

    Atomic or Point Defects are the most simple defects in solids. Due to the small size their direct observation by the routine techniques is not possible. A single type of defects (thermal defect) was observed in the quenching process. Using the Arrhenius method and threshold method we recommended the accurate both method of treatments. The calculated values for formation enthalpies and self-diffusion using positron lifetime and Doppler broadening in a good agreement in (A356.0) and (A413.1). Specifically it is show how PAT detect defect concentrations, (formation- migration) enthalpies and grain size for the material under investigation. Most of the these data are reported

  5. A comparative evaluation of freeze dried bone allograft and decalcified freeze dried bone allograft in the treatment of intrabony defects: A clinical and radiographic study

    Directory of Open Access Journals (Sweden)

    Rajat Gothi

    2015-01-01

    Full Text Available Background: Ideal graft material for regenerative procedures is autogenous bone graft but the major disadvantage with this graft is the need for a secondary surgical site to procure donor material and the frequent lack of intraoral donor site to obtain sufficient quantities of autogenous bone for multiple or deep osseous defects. Hence, to overcome these disadvantages, bone allografts were developed as an alternative source of graft material. Materials and Methods: In 10 patients with chronic periodontitis, 20 bilateral infrabony defects were treated with freeze dried bone allograft (FDBA-Group A and decalcified freeze dried bone allograft (DFDBA-Group B. Clinical and radiographic parameters were assessed preoperatively and at 3 months and 6 months postoperatively. Data thus obtained was subjected to statistical analysis. Results: Significant improvement in the reduction in probing depth and relative attachment level (RAL from the baseline to 3 months to baseline to 6 months in group A and group B, which was statistically significant but no statistically significant reduction was seen between 3 months and 6 months. On inter-group comparison, no significant differences were observed at all-time points. In adjunct to the probing depth and RAL, the radiographic area of the defect showed a similar trend in intra-group comparison and no significant difference was seen on inter-group comparison at all-time points. Conclusions: Within the limitations of the current study, it can be concluded that DFDBA did not show any improvement in the clinical and radiographic parameters in the treatment of the intrabony defects as compared to FDBA.

  6. Point defects in gallium arsenide characterized by positron annihilation spectroscopy and deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Mih, R.; Gronsky, R.; Sterne, P.A.

    1995-01-01

    Positron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. The authors present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot-Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data

  7. Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry

    Science.gov (United States)

    Stenberg, Pontus; Booker, Ian D.; Karhu, Robin; Pedersen, Henrik; Janzén, Erik; Ivanov, Ivan G.

    2018-04-01

    Point defects in n- and p-type 4H-SiC grown by fluorinated chemical vapor deposition (CVD) have been characterized optically by photoluminescence (PL) and electrically by deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). The results are considered in comparison with defects observed in non-fluorinated CVD growth (e.g., using SiH4 instead of SiF4 as silicon precursor), in order to investigate whether specific fluorine-related defects form during the fluorinated CVD growth, which might prohibit the use of fluorinated chemistry for device-manufacturing purposes. Several new peaks identifying new defects appear in the PL of fluorinated-grown samples, which are not commonly observed neither in other halogenated chemistries, nor in the standard CVD chemistry using silane (SiH4). However, further investigation is needed in order to determine their origin and whether they are related to incorporation of F in the SiC lattice, or not. The electric characterization does not find any new electrically-active defects that can be related to F incorporation. Thus, we find no point defects prohibiting the use of fluorinated chemistry for device-making purposes.

  8. Method of determining external defects of a structure by analyzing a series of its images in the monitoring system

    Directory of Open Access Journals (Sweden)

    Loktev Aleksey Alekseevich

    2015-03-01

    geometrical parameters by analyzing a series of images. This is the issue and the subject of this work, which developed the computational algorithms to detect external defects. At the stage of preliminary image processing there is the delineation of characteristic points in the image and the calculation of the optical flow in the area of these points. When determining the defect position, the characteristic points of the image are determined using the detector of Harris-Laplace, which are located in the central part of the image. The characteristic points outside the frame are considered to be background. There is an identification of the changes in characteristic points in the frame in relation to the background by using a pyramidal iterative scheme. In the second stage servo frame focuses on a specific point with the greatest change in relation to the background in the current time. The algorithm for object detection and determination of its parameters includes three procedures: detection procedure start; the procedure of the next image processing; stop procedure for determining the parameters of the object. The method described here can be used to create information-measuring system of monitoring based on the use of photodetectors with high-definition and recognition of defects (color differences and differences in the form compared to the background. Since almost each examination of a building or structure begins with a visual examination and determination of the most probable places of occurrence and presence of the defects, the proposed method can be combined with this stage and it will simplify the process of diagnosing, screening for the development of projects on reconstruction and placement of additional equipment on the existing infrastructure.

  9. Point defects in lithium fluoride films for micro-radiography, X-ray microscopy and photonic applications

    Energy Technology Data Exchange (ETDEWEB)

    Bonfigli, F.; Flora, F.; Marolo, T.; Montereali, R.M.; Baldacchini, G. [ENEA, UTS Tecnologie Fisiche Avanzate, C.R. Frascati, Via E. Fermi, 45, 00044 Frascati (Rome) (Italy); Faenov, A.Ya.; Pikuz, T.A. [MISDC of VNIIFTRI Mendeleevo, Moscow region, 141570 (Russian Federation); Nichelatti, E. [ENEA, UTS Tecnologie Fisiche Avanzate, C.R. Casaccia, Via Anguillarese, 301, 00060 Santa Maria di Galeria (Rome) (Italy); Reale, L. [Universita dell' Aquila e INFN, Dip. di Fisica, Coppito, L' Aquila (Italy)

    2005-01-01

    Point defects in lithium fluoride (LiF) have recently attracted renewed attention due the exciting results obtained in the realisation of miniaturised optical devices. Among light-emitting materials, LiF is of particular interest because it is almost not hygroscopic and can host, even at room temperature, stable color centers (CCs) that emit light in the visible and in the near infrared spectral range under optical excitation. The increasing demand for low-dimensionality photonic devices imposes the use of advanced irradiation methods for producing luminescent structures with high spatial resolution. An innovative irradiation technique to produce luminescent CCs in LiF crystals and films by using an extreme ultra-violet and soft X-ray laser-plasma source will be presented. This technique is capable to induce colored patterns with submicrometric spatial resolution on large areas in a short exposure time as compared with other irradiation methods. Luminescent regular arrays produced by this irradiation technique will be shown. Recently, the idea of using a LiF film as image detector for X-ray microscopy and micro-radiography based on optically-stimulated luminescence from CCs has been developed. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Importance of Defect Detectability in Positron Emission Tomography Imaging of Abdominal Lesions

    International Nuclear Information System (INIS)

    Yamashita, Shozo; Yokoyama, Kunihiko; Onoguchi, Masahisa; Yamamoto, Haruki; Nakaichi, Tetsu; Tsuji, Shiro; Nakajima, Kenichi

    2015-01-01

    This study was designed to assess defect detectability in positron emission tomography (PET) imaging of abdominal lesions. A National Electrical Manufactures Association International Electrotechnical Commission phantom was used. The simulated abdominal lesion was scanned for 10 min using dynamic list-mode acquisition method. Images, acquired with scan duration of 1-10 min, were reconstructed using VUE point HD and a 4.7 mm full-width at half-maximum (FWHM) Gaussian filter. Iteration-subset combinations of 2-16 and 2-32 were used. Visual and physical analyses were performed using the acquired images. To sequentially evaluate defect detectability in clinical settings, we examined two middle-aged male subjects. One had a liver cyst (approximately 10 mm in diameter) and the other suffered from pancreatic cancer with an inner defect region (approximately 9 mm in diameter). In the phantom study, at least 6 and 3 min acquisition durations were required to visualize 10 and 13 mm defect spheres, respectively. On the other hand, spheres with diameters ≥17 mm could be detected even if the acquisition duration was only 1 min. The visual scores were significantly correlated with background (BG) variability. In clinical settings, the liver cyst could be slightly visualized with an acquisition duration of 6 min, although image quality was suboptimal. For pancreatic cancer, the acquisition duration of 3 min was insufficient to clearly describe the defect region. The improvement of BG variability is the most important factor for enhancing lesion detection. Our clinical scan duration (3 min/bed) may not be suitable for the detection of small lesions or accurate tumor delineation since an acquisition duration of at least 6 min is required to visualize 10 mm lesions, regardless of reconstruction parameters. Improvements in defect detectability are important for radiation treatment planning and accurate PET-based diagnosis

  11. Theoretical study of defect properties in metals

    International Nuclear Information System (INIS)

    Sindzingre, P.

    1987-01-01

    Several characteristic properties (formation and migration enthalpies and volumes, dipole tensors, effects on shear elastic constants) of several point defects (vacancy, divacancy, interstitial, di-interstitial) in different metals: f.c.c. metals (Al, Cu, Ag, Au), h.c.p. metals (Be, Mg, Zn, Cd, Na, Co, Ti, Zr), b.c.c. metals (Li, Na, K, Rb, Cs) have been calculated. The calculated properties are evaluated from static computations performed with pair potentials derived from pseudo-potential theory (for simple or noble metals) or deduced empirically. Results are compared with available experimental data with previous theoretical works. The first part of this work where we have studied point defects properties in f.c.c. metals lead us to suggest a more convincing interpretation of X-ray scattering and elastic relation measurements concerning interstitials in Al and Cu, and a new interpretation for X-ray scattering measurements concerning di-interstitials in Al. In the second part, devoted to h.c.p. metals we are brought to propose for each studied metal the interstitial configurations which yield the best agreement with experimental results. The third part, devoted to the study of point defects in alkalin b.c.c. metals lead us to interpret self-diffusion in these metals with the assumption of a simultaneous contribution of monovacancies, divacancies and interstitials [fr

  12. Variations in first principles calculated defect energies in GaAs and ...

    Indian Academy of Sciences (India)

    Keywords. Ab initio calculations; semi-insulating GaAs; point defects. ... We are focusing on gallium arsenide. .... gallium vacancy in S & L, P et al and N & Z will exist in triple ... gallium antisite defect that include relaxation, a negative. U-effect is ...

  13. Density functional study the interaction of oxygen molecule with defect sites of graphene

    Energy Technology Data Exchange (ETDEWEB)

    Qi Xuejun [State Key Laboratory of Coal Combustion, Wuhan 430074 (China); Guo Xin, E-mail: guoxin@mail.hust.edu.cn [State Key Laboratory of Coal Combustion, Wuhan 430074 (China); Zheng Chuguang [State Key Laboratory of Coal Combustion, Wuhan 430074 (China)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer The defect sites existed on the graphite surface create active sites and enhance the reactivity of carbonaceous material. Black-Right-Pointing-Pointer Oxygen molecule more favor chemisorbed on the graphene surface contains defect sites than the perfect surface. Black-Right-Pointing-Pointer The single active oxygen atom adsorbed on the defect surfaces, it completely insert into the surface. - Abstract: The present article reports a theoretical study of oxygen interacted with graphene surface containing defect sites on the atomic level by employing the density functional theory combined with the graphene cluster model. It was founded that oxygen molecule prefers to be chemisorbed on the graphene surface containing defect sites compared to the perfect surface. The adsorption energy of O{sub 2} on the double defect site is about 2.5 times as large as that on the perfect graphene surface. Moreover, the oxygen molecule interacts with S-W defect site gives rise to stable epoxy structure, which pulling the carbon atom outward from the original site in the direction perpendicular to the surface. If the oxygen molecule is adsorbed on the single vacancy site, two C-O bonds are formed on the graphene surface. However, when the oxygen molecule is chemisorbed on the double vacancy site, the oxygen atoms substitute the missing carbon atom's position in the carbon plane and form a hexagonal structure on the graphene network. The results indicate that single active oxygen atom approaches the defect site, it's completely adsorbed in the plane and high energy is released. In all cases, the interaction of an oxygen atom with defect surface involves an exothermic process. The defect site creates active sites on the surface of graphene and produces catalytic effects during the process of oxidation of carbonaceous materials.

  14. Defects and diffusion in semiconductors XIV

    CERN Document Server

    Fisher, David J

    2012-01-01

    This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs; Synthesis and

  15. Nonlinear defect localized modes and composite gray and anti-gray solitons in one-dimensional waveguide arrays with dual-flip defects

    Science.gov (United States)

    Liu, Yan; Guan, Yefeng; Li, Hai; Luo, Zhihuan; Mai, Zhijie

    2017-08-01

    We study families of stationary nonlinear localized modes and composite gray and anti-gray solitons in a one-dimensional linear waveguide array with dual phase-flip nonlinear point defects. Unstaggered fundamental and dipole bright modes are studied when the defect nonlinearity is self-focusing. For the fundamental modes, symmetric and asymmetric nonlinear modes are found. Their stable areas are studied using different defect coefficients and their total power. For the nonlinear dipole modes, the stability conditions of this type of mode are also identified by different defect coefficients and the total power. When the defect nonlinearity is replaced by the self-defocusing one, staggered fundamental and dipole bright modes are created. Finally, if we replace the linear waveguide with a full nonlinear waveguide, a new type of gray and anti-gray solitons, which are constructed by a kink and anti-kink pair, can be supported by such dual phase-flip defects. In contrast to the usual gray and anti-gray solitons formed by a single kink, their backgrounds on either side of the gray hole or bright hump have the same phase.

  16. A molecular dynamics simulation study of irradiation induced defects in gold nanowire

    Science.gov (United States)

    Liu, Wenqiang; Chen, Piheng; Qiu, Ruizhi; Khan, Maaz; Liu, Jie; Hou, Mingdong; Duan, Jinglai

    2017-08-01

    Displacement cascade in gold nanowires was studied using molecular dynamics computer simulations. Primary knock-on atoms (PKAs) with different kinetic energies were initiated either at the surface or at the center of the nanowires. We found three kinds of defects that were induced by the cascade, including point defects, stacking faults and crater at the surface. The starting points of PKAs influence the number of residual point defects, and this consequently affect the boundary of anti-radiation window which was proposed by calculation of diffusion of point defects to the free surface of nanowires. Formation of stacking faults that expanded the whole cross-section of gold nanowires was observed when the PKA's kinetic energy was higher than 5 keV. Increasing the PKA's kinetic energy up to more than 10 keV may lead to the formation of crater at the surface of nanowires due to microexplosion of hot atoms. At this energy, PKAs started from the center of nanowires can also result in the creation of crater because length of cascade region is comparable to diameter of nanowires. Both the two factors, namely initial positions of PKAs as well as the craters induced by higher energy irradiation, would influence the ability of radiation resistance of metal nanowires.

  17. Ab initio theory of the N2V defect in diamond for quantum memory implementation

    Science.gov (United States)

    Udvarhelyi, Péter; Thiering, Gergő; Londero, Elisa; Gali, Adam

    2017-10-01

    The N2V defect in diamond is characterized by means of ab initio methods relying on density functional theory calculated parameters of a Hubbard model Hamiltonian. It is shown that this approach appropriately describes the energy levels of correlated excited states induced by this defect. By determining its critical magneto-optical parameters, we propose to realize a long-living quantum memory by N2V defect, i.e., H 3 color center in diamond.

  18. NMR studies of defects created by irradiation in metals

    International Nuclear Information System (INIS)

    Minier, M.; Minier, C.

    1983-06-01

    Nuclear Magnetic Resonance has been rarely used to study point defects created by irradiation in metals. Information obtained in this field using N.M.R. are shown. Some results are also described: characterization of migrating defects in electron irradiated copper; mobility of the complex interstitial-impurity in Al with 150 ppm of chromium; interstitial structure in irradiated aluminum and autodiffusion in metals [fr

  19. Artificial defects detection and location during welding

    International Nuclear Information System (INIS)

    Asty, M.

    1978-01-01

    Welding control by acoustic emission allows defects detection as soon as they are created. Acoustic testing saves time and gives better quality assurance in the case of multiple pass welding of plates. A welded joint was performed on A533B steel plates 250 mm thick by submerged arc welding. Artificial defects were implanted to determine significative parameters of acoustic reception. In operating conditions a significant acoustic activity takes place only during welding as shown by preliminary tests. At the same time an important noise is created by the arc, scories cooling and metal solidification and cooling. These problems are solved by an original processing in time-space detecting and locating defects with a good approximation [fr

  20. Revealing origin of quasi-one dimensional current transport in defect rich two dimensional materials

    International Nuclear Information System (INIS)

    Lotz, Mikkel R.; Boll, Mads; Bøggild, Peter; Petersen, Dirch H.; Hansen, Ole; Kjær, Daniel

    2014-01-01

    The presence of defects in graphene have for a long time been recognized as a bottleneck for its utilization in electronic and mechanical devices. We recently showed that micro four-point probes may be used to evaluate if a graphene film is truly 2D or if defects in proximity of the probe will lead to a non-uniform current flow characteristic of lower dimensionality. In this work, simulations based on a finite element method together with a Monte Carlo approach are used to establish the transition from 2D to quasi-1D current transport, when applying a micro four-point probe to measure on 2D conductors with an increasing amount of line-shaped defects. Clear 2D and 1D signatures are observed at low and high defect densities, respectively, and current density plots reveal the presence of current channels or branches in defect configurations yielding 1D current transport. A strong correlation is found between the density filling factor and the simulation yield, the fraction of cases with 1D transport and the mean sheet conductance. The upper transition limit is shown to agree with the percolation threshold for sticks. Finally, the conductance of a square sample evaluated with macroscopic edge contacts is compared to the micro four-point probe conductance measurements and we find that the micro four-point probe tends to measure a slightly higher conductance in samples containing defects

  1. A semi-mechanistic approach to calculate the probability of fuel defects

    International Nuclear Information System (INIS)

    Tayal, M.; Millen, E.; Sejnoha, R.

    1992-10-01

    In this paper the authors describe the status of a semi-mechanistic approach to the calculation of the probability of fuel defects. This approach expresses the defect probability in terms of fundamental parameters such as local stresses, local strains, and fission product concentration. The calculations of defect probability continue to reflect the influences of the conventional parameters like power ramp, burnup and CANLUB. In addition, the new approach provides a mechanism to account for the impacts of additional factors involving detailed fuel design and reactor operation, for example pellet density, pellet shape and size, sheath diameter and thickness, pellet/sheath clearance, and coolant temperature and pressure. The approach has been validated against a previous empirical correlation. AN illustrative example shows how the defect thresholds are influenced by changes in the internal design of the element and in the coolant pressure. (Author) (7 figs., tab., 12 refs.)

  2. Long term simulation of point defect cluster size distributions from atomic displacement cascades in Fe70Cr20Ni10

    International Nuclear Information System (INIS)

    Souidi, A.; Hou, M.; Becquart, C.S.; Domain, C.; De Backer, A.

    2015-01-01

    We have used an Object Kinetic Monte Carlo (OKMC) model to simulate the long term evolution of the primary damage in Fe 70 Cr 20 Ni 10 alloys. The mean number of Frenkel pairs created by different Primary Knocked on Atoms (PKA) was estimated by Molecular Dynamics using a ternary EAM potential developed in the framework of the PERFORM-60 European project. This number was then used to obtain the vacancy–interstitial recombination distance required in the calculation of displacement cascades in the Binary Collision Approximation (BCA) with code MARLOWE (Robinson, 1989). The BCA cascades have been generated in the 10–100 keV range with the MARLOWE code and two different screened Coulomb potentials, namely, the Molière approximation to the Thomas–Fermi potential and the so-called “Universal” potential by Ziegler, Biersack and Littmark (ZBL). These cascades have been used as input to the OKMC code LAKIMOCA (Domain et al., 2004), with a set of parameters for describing the mobility of point defect clusters based on ab initio calculations and experimental data. The cluster size distributions have been estimated for irradiation doses of 0.1 and 1 dpa, and a dose rate of 10 −7 dpa/s at 600 K. We demonstrate that, like in the case of BCC iron, cluster size distributions in the long term are independent of the cascade energy and that the recursive cascade model suggested for BCC iron in Souidi et al. (2011) also applies to FCC Fe 70 Cr 20 Ni 10. The results also show that the influence of the BCA potential is sizeable but the qualitative correspondence in the predicted long term evolution is excellent

  3. High Defect Tolerance in Lead Halide Perovskite CsPbBr3.

    Science.gov (United States)

    Kang, Jun; Wang, Lin-Wang

    2017-01-19

    The formation energies and charge-transition levels of intrinsic point defects in lead halide perovskite CsPbBr 3 are studied from first-principles calculations. It is shown that the formation energy of dominant defect under Br-rich growth condition is much lower than that under moderate or Br-poor conditions. Thus avoiding the Br-rich condition can help to reduce the defect concentration. Interestingly, CsPbBr 3 is found to be highly defect-tolerant in terms of its electronic structure. Most of the intrinsic defects induce shallow transition levels. Only a few defects with high formation energies can create deep transition levels. Therefore, CsPbBr 3 can maintain its good electronic quality despite the presence of defects. Such defect tolerance feature can be attributed to the lacking of bonding-antibonding interaction between the conduction bands and valence bands.

  4. Effects of extrinsic point defects in phosphorene: B, C, N, O, and F adatoms

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Gaoxue, E-mail: gaoxuew@mtu.edu, E-mail: pandey@mtu.edu, E-mail: shashi.p.karna.civ@mail.mil; Pandey, Ravindra, E-mail: gaoxuew@mtu.edu, E-mail: pandey@mtu.edu, E-mail: shashi.p.karna.civ@mail.mil [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Karna, Shashi P., E-mail: gaoxuew@mtu.edu, E-mail: pandey@mtu.edu, E-mail: shashi.p.karna.civ@mail.mil [U.S. Army Research Laboratory, Weapons and Materials Research Directorate, ATTN: RDRL-WM, Aberdeen Proving Ground, Maryland 21005-5069 (United States)

    2015-04-27

    Phosphorene is emerging as a promising 2D semiconducting material with a direct band gap and high carrier mobility. In this paper, we examine the role of the extrinsic point defects including surface adatoms in modifying the electronic properties of phosphorene using density functional theory. The surface adatoms considered are B, C, N, O, and F with a [He] core electronic configuration. Our calculations show that B and C, with electronegativity close to P, prefer to break the sp{sup 3} bonds of phosphorene and reside at the interstitial sites in the 2D lattice by forming sp{sup 2} like bonds with the native atoms. On the other hand, N, O, and F, which are more electronegative than P, prefer the surface sites by attracting the lone pairs of phosphorene. B, N, and F adsorption will also introduce local magnetic moment to the lattice. Moreover, B, C, N, and F adatoms will modify the band gap of phosphorene, yielding metallic transverse tunneling characters. Oxygen does not modify the band gap of phosphorene, and a diode like tunneling behavior is observed. Our results therefore offer a possible route to tailor the electronic and magnetic properties of phosphorene by the adatom functionalization and provide the physical insights of the environmental sensitivity of phosphorene, which will be helpful to experimentalists in evaluating the performance and aging effects of phosphorene-based electronic devices.

  5. Defect solitons in saturable nonlinearity media with parity-time symmetric optical lattices

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Sumei [Department of Physics, Guangdong University of Petrochemical Technology, Maoming 525000 (China); Laboratory of Nanophotonic Functional Materials and Devices, South China Normal University, Guangzhou 510631 (China); Hu, Wei, E-mail: huwei@scnu.edu.cn [Laboratory of Nanophotonic Functional Materials and Devices, South China Normal University, Guangzhou 510631 (China)

    2013-11-15

    We reported the existence and stability of defect solitons in saturable nonlinearity media with parity-time (PT) symmetric optical lattices. Families of fundamental and dipole solitons are found in the semi-infinite gap and the first gap. The power of solitons increases with the increasing of the propagation constant and saturation parameter. The existence areas of fundamental and dipole solitons shrink with the growth of saturation parameter. The instability of dipole solitons for positive and no defect induced by the imaginary part of PT symmetric potentials can be suppressed by the saturation nonlinearity, but for negative defect it cannot be suppressed by the saturation nonlinearity.

  6. Influence of cutting parameters on the depth of subsurface deformed layer in nano-cutting process of single crystal copper.

    Science.gov (United States)

    Wang, Quanlong; Bai, Qingshun; Chen, Jiaxuan; Su, Hao; Wang, Zhiguo; Xie, Wenkun

    2015-12-01

    Large-scale molecular dynamics simulation is performed to study the nano-cutting process of single crystal copper realized by single-point diamond cutting tool in this paper. The centro-symmetry parameter is adopted to characterize the subsurface deformed layers and the distribution and evolution of the subsurface defect structures. Three-dimensional visualization and measurement technology are used to measure the depth of the subsurface deformed layers. The influence of cutting speed, cutting depth, cutting direction, and crystallographic orientation on the depth of subsurface deformed layers is systematically investigated. The results show that a lot of defect structures are formed in the subsurface of workpiece during nano-cutting process, for instance, stair-rod dislocations, stacking fault tetrahedron, atomic clusters, vacancy defects, point defects. In the process of nano-cutting, the depth of subsurface deformed layers increases with the cutting distance at the beginning, then decreases at stable cutting process, and basically remains unchanged when the cutting distance reaches up to 24 nm. The depth of subsurface deformed layers decreases with the increase in cutting speed between 50 and 300 m/s. The depth of subsurface deformed layer increases with cutting depth, proportionally, and basically remains unchanged when the cutting depth reaches over 6 nm.

  7. Helium bubbles aggravated defects production in self-irradiated copper

    Science.gov (United States)

    Wu, FengChao; Zhu, YinBo; Wu, Qiang; Li, XinZhu; Wang, Pei; Wu, HengAn

    2017-12-01

    Under the environment of high radiation, materials used in fission and fusion reactors will internally accumulate numerous lattice defects and bubbles. With extensive studies focused on bubble resolution under irradiation, the mutually effects between helium bubbles and displacement cascades in irradiated materials remain unaddressed. Therefore, the defects production and microstructure evolution under self-irradiation events in vicinity of helium bubbles are investigated by preforming large scale molecular dynamics simulations in single-crystal copper. When subjected to displacement cascades, distinguished bubble resolution categories dependent on bubble size are observed. With the existence of bubbles, radiation damage is aggravated with the increasing bubble size, represented as the promotion of point defects and dislocations. The atomic mechanisms of heterogeneous dislocation structures are attributed to different helium-vacancy cluster modes, transforming from the resolved gas trapped with vacancies to the biased absorption of vacancies by the over-pressured bubble. In both cases, helium impedes the recombination of point defects, leading to the accelerated formation of interstitial loops. The results and insight obtained here might contribute to understand the underlying mechanism of transmutant solute on the long-term evolution of irradiated materials.

  8. Evaluation of Injection Molding Process Parameters for Manufacturing Polyethylene Terephthalate

    Directory of Open Access Journals (Sweden)

    Marwah O.M.F.

    2017-01-01

    Full Text Available Quality control is an important aspect in manufacturing process. The quality of product in injection moulding is influenced by injection moulding process parameter. In this study, the effect of injection moulding parameter on defects quantity of PET preform was investigated. Optimizing the parameter of injection moulding process is critical to enhance productivity where parameters must operate at an optimum level for an acceptable performance. Design of Experiment (DOE by factorial design approach was used to find an optimum parameter setting and reduce the defects. In this case study, Minitab 17 software was used to analyses the data. The selected input parameters were mould hot runner temperature, water cooling chiller temperature 1 and water cooling chiller temperature 2. Meanwhile, the output for the process was defects quantity of the preform. The relationship between input and output of the process was analyzed using regression method and Analysis of Variance (ANOVA. In order to interpolate the experiment data, mathematical modeling was used which consists of different types of regression equation. Next, from the model, 95% confidence level (p-value was considered and the significant parameter was figured out. This study involved a collaboration with a preform injection moulding company which was Nilai Legasi Plastik Sdn Bhd. The collaboration enabled the researchers to collect the data and also help the company to improve the quality of its production. The results of the study showed that the optimum parameter setting that could reduce the defect quantity of preform was MHR= 88°C, CT1= 24°C and CT2= 27°C. The comparison defect quantity analysis between current companies setting with the optimum setting showed improvement by 21% reduction of defect quantity at the optimum setting. Finally, from the optimization plot, the validation error between the prediction value and experiment was 1.72%. The result proved that quality of products

  9. Classical integrable defects as quasi Bäcklund transformations

    Energy Technology Data Exchange (ETDEWEB)

    Doikou, Anastasia, E-mail: a.doikou@hw.ac.uk

    2016-10-15

    We consider the algebraic setting of classical defects in discrete and continuous integrable theories. We derive the “equations of motion” on the defect point via the space-like and time-like description. We then exploit the structural similarity of these equations with the discrete and continuous Bäcklund transformations. And although these equations are similar they are not exactly the same to the Bäcklund transformations. We also consider specific examples of integrable models to demonstrate our construction, i.e. the Toda chain and the sine-Gordon model. The equations of the time (space) evolution of the defect (discontinuity) degrees of freedom for these models are explicitly derived.

  10. Surface defect detection in tiling Industries using digital image processing methods: analysis and evaluation.

    Science.gov (United States)

    Karimi, Mohammad H; Asemani, Davud

    2014-05-01

    Ceramic and tile industries should indispensably include a grading stage to quantify the quality of products. Actually, human control systems are often used for grading purposes. An automatic grading system is essential to enhance the quality control and marketing of the products. Since there generally exist six different types of defects originating from various stages of tile manufacturing lines with distinct textures and morphologies, many image processing techniques have been proposed for defect detection. In this paper, a survey has been made on the pattern recognition and image processing algorithms which have been used to detect surface defects. Each method appears to be limited for detecting some subgroup of defects. The detection techniques may be divided into three main groups: statistical pattern recognition, feature vector extraction and texture/image classification. The methods such as wavelet transform, filtering, morphology and contourlet transform are more effective for pre-processing tasks. Others including statistical methods, neural networks and model-based algorithms can be applied to extract the surface defects. Although, statistical methods are often appropriate for identification of large defects such as Spots, but techniques such as wavelet processing provide an acceptable response for detection of small defects such as Pinhole. A thorough survey is made in this paper on the existing algorithms in each subgroup. Also, the evaluation parameters are discussed including supervised and unsupervised parameters. Using various performance parameters, different defect detection algorithms are compared and evaluated. Copyright © 2013 ISA. Published by Elsevier Ltd. All rights reserved.

  11. Electron-spin-resonance study of radiation-induced paramagnetic defects in oxides grown on (100) silicon substrates

    International Nuclear Information System (INIS)

    Kim, Y.Y.; Lenahan, P.M.

    1988-01-01

    We have used electron-spin resonance to investigate radiation-induced point defects in Si/SiO 2 structures with (100) silicon substrates. We find that the radiation-induced point defects are quite similar to defects generated in Si/SiO 2 structures grown on (111) silicon substrates. In both cases, an oxygen-deficient silicon center, the E' defect, appears to be responsible for trapped positive charge. In both cases trivalent silicon (P/sub b/ centers) defects are primarily responsible for radiation-induced interface states. In earlier electron-spin-resonance studies of unirradiated (100) substrate capacitors two types of P/sub b/ centers were observed; in oxides prepared in three different ways only one of these centers, the P/sub b/ 0 defect, is generated in large numbers by ionizing radiation

  12. Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se{sub 2} based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, D.W.; Seol, M.S.; Kwak, D.W.; Oh, J.S. [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of); Jeong, J.H. [Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of)

    2012-08-01

    Hydrogen effects on deep level defects and a defect generation in proton implanted Cu(In,Ga)Se{sub 2} (CIGS) based thin films for solar cell were investigated. CIGS films with a thickness of 3 {mu}m were grown on a soda-lime glass substrate by a co-evaporation method, and then were implanted with protons. To study deep level defects in the proton implanted CIGS films, deep level transient spectroscopy measurements on the CIGS-based solar cells were carried out, these measurements found 6 traps (including 3 hole traps and 3 electron traps). In the proton implanted CIGS films, the deep level defects, which are attributed to the recombination centers of the CIGS solar cell, were significantly reduced in intensity, while a deep level defect was generated around 0.28 eV above the valence band maximum. Therefore, we suggest that most deep level defects in CIGS films can be controlled by hydrogen effects. - Highlights: Black-Right-Pointing-Pointer Proton implanted Cu(In,Ga)Se{sub 2} thin film and solar cell are prepared. Black-Right-Pointing-Pointer Deep level defects of Cu(In,Ga)Se{sub 2} thin film and solar cell are investigated. Black-Right-Pointing-Pointer Hydrogenation using proton implantation and H{sub 2} annealing reduces deep level defects. Black-Right-Pointing-Pointer Hydrogenation could enhance electrical properties and efficiency of solar cells.

  13. Electron irradiation-induced defects in ZnO studied by positron annihilation

    International Nuclear Information System (INIS)

    Chen, Z.Q.; Maekawa, M.; Kawasuso, A.; Sakai, S.; Naramoto, H.

    2006-01-01

    ZnO crystals were subjected to 3 MeV electron irradiation up to a high dose of 5.5x10 18 cm -2 . The production and recovery of vacancy defects were studied by positron annihilation spectroscopy. The increase of positron lifetime and Doppler broadening S parameter after irradiation indicates introduction of V Zn related defects. Most of these vacancies are annealed at temperatures below 200 o C. However, after annealing at around 400 o C, secondary defects are produced. All the vacancy defects are annealed out at around 700 o C

  14. Defect assessment procedures at high temperature

    International Nuclear Information System (INIS)

    Ainsworth, R.A.

    1991-01-01

    A comprehensive assessment procedure for the high-temperature response of structures is being produced. The procedure is referred to as R5 and is written as a series of step-by-step instructions in a number of volumes. This paper considers in detail those parts of R5 which address the behaviour of defects. The defect assessment procedures may be applied to defects found in service, postulated defects, or defects formed during operation as a result of creep-fatigue loading. In the last case, a method is described for deducing from endurance data the number of cycles to initiate a crack of a specified size. Under steady loading, the creep crack tip parameter C * is used to assess crack growth. Under cyclic loading, the creep crack growth during dwell periods is stiell governed by C * but crack growth due to cyclic excursions must also be included. This cyclic crack growth is described by an effective stress intensity factor range. A feature of the R5 defect assessment procedures in that they are based on simplified methods and approximate reference stress methods are described which enable C * in a component to be evaluated. It is shown by comparison with theoretical calculations and experimental data that reliable estimates of C * and the associated crack growth are obtained provided realistic creep strain rate date are used in the reference stress approximation. (orig./HP)

  15. Improvement of visualization efficiency for the nondestructive inspection image of internal defects in plate type nuclear fuel

    International Nuclear Information System (INIS)

    Park, Seung Kyu; Park, Nak Kyu; Baik, Sung Hoon; Lee, Yoon Sang; Cheong, Yong Moo; Kang, Young June

    2012-01-01

    Plate type nuclear fuel has been adopted in most research reactors. The production quality of the fuel is a key part for an efficient and stable generation of thermal energy in research reactors. Thus, a nondestructive quality inspection for the internal defects of plate type nuclear fuel is a key process during the production of nuclear fuel for safety insurance. Nondestructive quality inspections based on X rays and ultrasounds have been widely used for the defect detection of plate type nuclear fuel. X ray testing is a simple and fast inspection method, and provides an image in real time as the inspection results. Thus, the testing can be carried out by a non expert field worker. However, it is hard to detect closed type defects that should be detected during the production of plate type nuclear fuel. Ultrasonic testing is a powerful tool to detect internal defects including open type and closed type defects in plate type nuclear fuel. However, the inspection process is complicated because an immersion test should be carried out in a water tank. It is also a time consuming inspection method because area testing to acquire image is based on the scanning of the point by point inspections. Among nondestructive inspection techniques, the techniques based on laser interferometry and infrared thermography have been widely used in the detection of internal defects of plate type composite materials, such as aircraft, automotive etc. While infrared thermography technique (IRT) analyses the thermal behavior of the specimen surface, laser interferometry technique (LIT) analyses the deformation field. Both techniques are useful tools for detection and evaluation of internal defects in composite materials. Especially, the laser interferometry technique can provide the depth information of internal defects. Laser interferometry technique (LIT) is a non contact inspection method faster than thermography. Also, this technique requires less energy than thermography and the

  16. Defect Proliferation in Active Nematic Suspensions

    Science.gov (United States)

    Mishra, Prashant; Bowick, Mark J.; Giomi, Luca; Marchetti, M. Cristina

    2014-03-01

    The rich structure of equilibrium nematic suspensions, with their characteristic disclination defects, is modified when active forces come into play. The uniform nematic state is known to be unstable to splay (extensile) or bend (contractile) deformations above a critical activity. At even higher activity the flow becomes oscillatory and eventually turbulent. Using hydrodynamics, we classify the active flow regimes as functions of activity and order parameter friction for both contractile and extensile systems. The turbulent regime is marked by a non-zero steady state density of mobile defect pairs. The defect density itself scales with an ``active Ericksen number,'' defined as the ratio of the rate at which activity is injected into the system to the relaxation rate of orientational deformations. The work at Syracuse University was supported by the NSF on grant DMR-1004789 and by the Syracuse Soft Matter Program.

  17. A point defect model for the general and pitting corrosion on iron-oxide-electrolyte interface deduced from current oscillations

    CERN Document Server

    Pagitsas, M; Sazou, D

    2003-01-01

    Analysis of the passive-active oscillatory region of the Fe-0.75 M H sub 2 SO sub 4 system, perturbed by adding small amounts of halide species, allow the distinction between pitting and general corrosion. Complex periodic and aperiodic current oscillations characterize pitting corrosion whereas monoperiodic oscillations of a relaxation type indicate general corrosion. A point defect model (PDM) is considered for the microscopic description of the growth and breakdown of the iron oxide film. The physicochemical processes leading to different types of corrosion can be clarified in terms of the PDM. Occupation of an anion vacancy by a halide ion results in the localized attack of the passive oxide and pitting corrosion. On the other hand, the formation of surface soluble iron complexes is related to the uniform dissolution of the passive oxide and general corrosion.

  18. OH-point defects in quartz in B- and Li-bearing systems and their application to pegmatites

    Science.gov (United States)

    Baron, M. A.; Stalder, R.; Konzett, J.; Hauzenberger, C. A.

    2015-01-01

    OH incorporation in quartz in Al-, B- and Li-bearing systems (granitic systems containing tourmaline or spodumene) was studied experimentally in order to investigate the effect of pressure, temperature and chemical impurities on the generation of OH-defects. High-pressure experiments were carried out at pressures between 5 and 25 kbar and temperatures between 800 and 900 °C, and OH-contents in quartz were calculated from IR absorption spectra measured on oriented quartz crystals. IR absorption features were assigned to impurity substitutions, such as AlOH (3,420, 3,379 and 3,315 cm-1) and BOH (3,595 cm-1), LiOH (3,483 cm-1), and hydrogarnet substitution (4H)Si defects (3,583 cm-1). Results indicate a negative correlation of incorporated Al-specific OH-defect content versus pressure (630 ± 130 wt ppm H2O at 5 kbar to 102 ± 6 wt ppm H2O at 25 kbar), but no clear correlation of B-specific OH-defects with pressure. In runs initially containing spodumene, virtually OH-free quartzes were observed at pressures ≥10 kbar, where impurity cations compensate each other forming an anhydrous eucryptite-defect component. In contrast, at 5 kbar, both Li- ad Al-specific OH-defects are observed (corresponding to 470 ± 75 wt ppm H2O). Results from this study may therefore be used to monitor formation conditions of quartz in terms of pressure and trace metal saturation of the crystallizing petrological system. IR spectra obtained from natural quartz grains from a tourmaline-bearing pegmatite exhibit B- and Al-related OH-bands. The B-related OH-band is also exhibited in quartz from a tourmaline + spodumene-bearing pegmatite. Li- and Al-related OH-bands, however, are subordinate or not observed at all in the spodumene-bearing system, which suggests that OH-vibrations do not reflect absolute Li-contents in quartz due to efficient coupled substitution involving Al. Data from experimental runs and natural specimens indicate that the B-related OH-band can be used as a rough proxy for

  19. Benign gastric filling defect

    Energy Technology Data Exchange (ETDEWEB)

    Oh, K K; Lee, Y H; Cho, O K; Park, C Y [Yonsei University College of Medicine, Seoul (Korea, Republic of)

    1979-06-15

    The gastric lesion is a common source of complaints to Orientals, however, evaluation of gastric symptoms and laboratory examination offer little specific aid in the diagnosis of gastric diseases. Thus roentgenography of gastrointestinal tract is one of the most reliable method for detail diagnosis. On double contract study of stomach, gastric filling defect is mostly caused by malignant gastric cancer, however, other benign lesions can cause similar pictures which can be successfully treated by surgery. 66 cases of benign causes of gastric filling defect were analyzed at this point of view, which was verified pathologically by endoscope or surgery during recent 7 years in Yensei University College of Medicine, Severance Hospital. The characteristic radiological picture of each disease was discussed for precise radiologic diagnosis. 1. Of total 66 cases, there were 52 cases of benign gastric tumor 10 cases of gastric varices, 5 cases of gastric bezoar, 5 cases of corrosive gastritis, 3 cases of granulomatous disease and one case of gastric hematoma. 2. The most frequent causes of benign tumors were adenomatous polyp (35/42) and the next was leiomyoma (4/42). Others were one of case of carcinoid, neurofibroma and cyst. 3. Characteristic of benign adenomatous polyp were relatively small in size, smooth surface and were observed that large size, benign polyp was frequently type IV lesion with a stalk. 4. Submucosal tumors such as leiomyoma needed differential diagnosis with polypoid malignant cancer. However, the characteristic points of differentiation was well circumscribed smooth margined filling defect without definite mucosal destruction on surface. 5. Gastric varices showed multiple lobulated filling defected especially on gastric fundus that changed its size and shape by respiration and posture of patients. Same varices lesions on esophagus and history of liver disease were helpful for easier diagnosis. 6. Gastric bezoar showed well defined movable mass

  20. Benign gastric filling defect

    International Nuclear Information System (INIS)

    Oh, K. K.; Lee, Y. H.; Cho, O. K.; Park, C. Y.

    1979-01-01

    The gastric lesion is a common source of complaints to Orientals, however, evaluation of gastric symptoms and laboratory examination offer little specific aid in the diagnosis of gastric diseases. Thus roentgenography of gastrointestinal tract is one of the most reliable method for detail diagnosis. On double contract study of stomach, gastric filling defect is mostly caused by malignant gastric cancer, however, other benign lesions can cause similar pictures which can be successfully treated by surgery. 66 cases of benign causes of gastric filling defect were analyzed at this point of view, which was verified pathologically by endoscope or surgery during recent 7 years in Yensei University College of Medicine, Severance Hospital. The characteristic radiological picture of each disease was discussed for precise radiologic diagnosis. 1. Of total 66 cases, there were 52 cases of benign gastric tumor 10 cases of gastric varices, 5 cases of gastric bezoar, 5 cases of corrosive gastritis, 3 cases of granulomatous disease and one case of gastric hematoma. 2. The most frequent causes of benign tumors were adenomatous polyp (35/42) and the next was leiomyoma (4/42). Others were one of case of carcinoid, neurofibroma and cyst. 3. Characteristic of benign adenomatous polyp were relatively small in size, smooth surface and were observed that large size, benign polyp was frequently type IV lesion with a stalk. 4. Submucosal tumors such as leiomyoma needed differential diagnosis with polypoid malignant cancer. However, the characteristic points of differentiation was well circumscribed smooth margined filling defect without definite mucosal destruction on surface. 5. Gastric varices showed multiple lobulated filling defected especially on gastric fundus that changed its size and shape by respiration and posture of patients. Same varices lesions on esophagus and history of liver disease were helpful for easier diagnosis. 6. Gastric bezoar showed well defined movable mass

  1. Benign gastric filling defect

    Energy Technology Data Exchange (ETDEWEB)

    Oh, K. K.; Lee, Y. H.; Cho, O. K.; Park, C. Y. [Yonsei University College of Medicine, Seoul (Korea, Republic of)

    1979-06-15

    The gastric lesion is a common source of complaints to Orientals, however, evaluation of gastric symptoms and laboratory examination offer little specific aid in the diagnosis of gastric diseases. Thus roentgenography of gastrointestinal tract is one of the most reliable method for detail diagnosis. On double contract study of stomach, gastric filling defect is mostly caused by malignant gastric cancer, however, other benign lesions can cause similar pictures which can be successfully treated by surgery. 66 cases of benign causes of gastric filling defect were analyzed at this point of view, which was verified pathologically by endoscope or surgery during recent 7 years in Yensei University College of Medicine, Severance Hospital. The characteristic radiological picture of each disease was discussed for precise radiologic diagnosis. 1. Of total 66 cases, there were 52 cases of benign gastric tumor 10 cases of gastric varices, 5 cases of gastric bezoar, 5 cases of corrosive gastritis, 3 cases of granulomatous disease and one case of gastric hematoma. 2. The most frequent causes of benign tumors were adenomatous polyp (35/42) and the next was leiomyoma (4/42). Others were one of case of carcinoid, neurofibroma and cyst. 3. Characteristic of benign adenomatous polyp were relatively small in size, smooth surface and were observed that large size, benign polyp was frequently type IV lesion with a stalk. 4. Submucosal tumors such as leiomyoma needed differential diagnosis with polypoid malignant cancer. However, the characteristic points of differentiation was well circumscribed smooth margined filling defect without definite mucosal destruction on surface. 5. Gastric varices showed multiple lobulated filling defected especially on gastric fundus that changed its size and shape by respiration and posture of patients. Same varices lesions on esophagus and history of liver disease were helpful for easier diagnosis. 6. Gastric bezoar showed well defined movable mass

  2. Influence of Dopants in ZnO Films on Defects

    Science.gov (United States)

    Peng, Cheng-Xiao; Weng, Hui-Min; Zhang, Yang; Ma, Xing-Ping; Ye, Bang-Jiao

    2008-12-01

    The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet SAl > Sun > SAg for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.

  3. Formation Mechanisms for Entry and Exit Defects in Bobbin Friction Stir Welding

    Directory of Open Access Journals (Sweden)

    Abbas Tamadon

    2018-01-01

    Full Text Available Bobbin friction stir welding (BFSW is an innovative variant for the solid state welding process whereby a rotating symmetrical tool causes a fully penetrated bond. Despite the process development, there are still unknown variables in the characterization of the process parameters which can cause uncontrolled weld defects. The entry zone and the exit zone consist of two discontinuity-defects and removing them is one of the current challenges for improving the weld quality. In the present research, the characteristic features of the entry and exit defects in the weld structure and formation mechanism of them during the BFSW processing was investigated. Using stacked layers of multi-colour plasticine the material flow, analogous to metal flow, can be visualised. By using different colours as the path markers of the analogue model, the streamline flow can be easily delineated in the discontinuity defects compared with the metal welds. AA6082-T6 aluminium plates and multi-layered plasticine slabs were employed to replicate the entry-exit defects in the metal weld and analogue samples. The fixed-bobbin tool utilized for this research was optimized by adding a thread feature and tri-flat geometry to the pin and closed-end spiral scrolls on both shoulder surfaces. Samples were processed at different rotating and longitudinal speeds to show the degree of dependency on the welding parameters for the defects. The analogue models showed that the entry zone and the exit zone of the BFSW are affected by the inhomogeneity of the material flow regime which causes the ejection or disruption of the plastic flow in the gap between the bobbin shoulders. The trial aluminium welds showed that the elimination of entry-exit defects in the weld body is not completely possible but the size of the defects can be minimized by modification of the welding parameters. For the entry zone, the flow pattern evolution suggested formation mechanisms for a sprayed tail, island zone

  4. The effect of correlated and point defects on the vortex lattice melting transition in single crystal YBa2Cu3O7-δ

    International Nuclear Information System (INIS)

    Kwok, W.K.; Fleshler, S.; Welp, U.; Downey, J.; Crabtree, G.W.; Fendrich, J. Giapintzakis, J.

    1993-08-01

    The vortex melting transition T m in several untwinned and twinned crystals measured resistively in fields up to 8 Tesla. A Lindemann criterion for vortex lattice melting is obtained in addition to a sharp hysteresis in the magnetoresistance at B m supporting a first order phase transition. The anisotropy of twin boundary pinning and its reduction of the ''kink'' in ρ(T) associated with the first order melting transition is discussed in samples with very dilute twin boundaries. We also report on direct suppression of melting transition by intrinsic pinning for H parallel ab and by electron-irradiation-induced point defects

  5. Glaucoma Diagnostic Capabilities of Foveal Avascular Zone Parameters Using Optical Coherence Tomography Angiography According to Visual Field Defect Location.

    Science.gov (United States)

    Kwon, Junki; Choi, Jaewan; Shin, Joong Won; Lee, Jiyun; Kook, Michael S

    2017-12-01

    To assess the diagnostic ability of foveal avascular zone (FAZ) parameters to discriminate glaucomatous eyes with visual field defects (VFDs) in different locations (central vs. peripheral) from normal eyes. Totally, 125 participants were separated into 3 groups: normal (n=45), glaucoma with peripheral VFD (PVFD, n=45), and glaucoma with central VFD (CVFD, n=35). The FAZ area, perimeter, and circularity and parafoveal vessel density were calculated from optical coherence tomography angiography images. The diagnostic ability of the FAZ parameters and other structural parameters was determined according to glaucomatous VFD location. Associations between the FAZ parameters and central visual function were evaluated. A larger FAZ area and longer FAZ perimeter were observed in the CVFD group than in the PVFD and normal groups. The FAZ area, perimeter, and circularity were better in differentiating glaucomatous eyes with CVFDs from normal eyes [areas under the receiver operating characteristic curves (AUC), 0.78 to 0.88] than in differentiating PVFDs from normal eyes (AUC, 0.51 to 0.64). The FAZ perimeter had a similar AUC value to the circumpapillary retinal nerve fiber layer and macular ganglion cell-inner plexiform layer thickness for differentiating eyes with CVFDs from normal eyes (all P>0.05, the DeLong test). The FAZ area was significantly correlated with central visual function (β=-112.7, P=0.035, multivariate linear regression). The FAZ perimeter had good diagnostic capability in differentiating glaucomatous eyes with CVFDs from normal eyes, and may be a potential diagnostic biomarker for detecting glaucomatous patients with CVFDs.

  6. Gravitational field of massive point particle in general relativity

    International Nuclear Information System (INIS)

    Fiziev, P.P.

    2003-10-01

    Using various gauges of the radial coordinate we give a description of the static spherically symmetric space-times with point singularity at the center and vacuum outside the singularity. We show that in general relativity (GR) there exist infinitely many such solutions to the Einstein equations which are physically different and only some of them describe the gravitational field of a single massive point particle. In particular, we show that the widespread Hilbert's form of Schwarzschild solution does not solve the Einstein equations with a massive point particle's stress-energy tensor. Novel normal coordinates for the field and a new physical class of gauges are proposed, in this way achieving a correct description of a point mass source in GR. We also introduce a gravitational mass defect of a point particle and determine the dependence of the solutions on this mass defect. In addition we give invariant characteristics of the physically and geometrically different classes of spherically symmetric static space-times created by one point mass. (author)

  7. Effect of single point defects on the confinement losses of air-guiding photonic bandgap fibers

    Institute of Scientific and Technical Information of China (English)

    Shi Wei-Hua; Zhao Yan; Qian Li-Guo; Chen He-Ming

    2012-01-01

    The confinement losses in air-guiding photonic bandgap fibers (PBGFs) with air hole missing are studied with the full-vector finite-element method.It is confirmed that there are two loss peaks (1.555 and 1.598 μm) if there is a hole missing in the cladding far from the core.The closer to the core the hole missing is,the larger the confinement losses are,and even no mode could propagate in the core.The main power of the fundamental mode leaks from the core to the cladding defect.The quality of PBGFs can be improved through controlling the number and position of defects.

  8. Detection of defects in formed sheet metal using medial axis transformation

    Science.gov (United States)

    Murmu, Naresh C.; Velgan, Roman

    2003-05-01

    In the metal forming processes, the sheet metals are often prone to various defects such as thinning, dents, wrinkles etc. In the present manufacturing environments with ever increasing demand of higher quality, detecting the defects of formed sheet metal using an effective and objective inspection system is the foremost norm to remain competitive in market. The defect detection using optical techniques aspire to satisfy its needs to be non-contact and fast. However, the main difficulties to achieve this goal remain essentially on the development of efficient evaluation technique and accurate interpretation of extracted data. The defect like thinning is detected by evaluating the deviations of the thickness in the formed sheet metal against its nominal value. The present evaluation procedure for determination of thickness applied on the measurements data is not without deficiency. To improve this procedure, a new evaluation approach based on medial axis transformation is proposed here. The formed sheet metals are digitized using fringe projection systems in different orientations, and afterwards registered into one coordinate frame. The medial axis transformation (MAT) is applied on the point clouds, generating the point clouds of MAT. This data is further processed and medial surface is determined. The thinning defect is detected by evaluating local wall thickness and other defects like wrinkles are determined using the shape recognition on the medial surface. The applied algorithm is simple, fast and robust.

  9. Lithium niobate. Defects, photorefraction and ferroelectric switching

    Energy Technology Data Exchange (ETDEWEB)

    Volk, Tatyana [Russian Academy of Sciences, Inst. for Crystallography, Moscow (Russian Federation); Woehlecke, Manfred [Osnabrueck Univ. (Germany). Fachbereich Physik

    2008-07-01

    The book presents the current state of studies of point defects, both intrinsic and extrinsic (impurities, radiation centers, etc.), in LiNbO{sub 3}. The contribution of intrinsic defects to photoinduced charge transport, i.e. to the photorefraction, is explained. The photorefractive and optical properties of LiNbO{sub 3} crystals with different stoichiometry and of those doped with so-called ''optical-damage resistant'' impurities controlling the intrinsic defect structure are described in detail. Applications included are to the problem of non-erasable recording of photorefractive holograms in LiNbO{sub 3} and the current situation of studies in the ferroelectric switching and domain structure of LiNbO{sub 3}, as well as the creation of periodically-poled structures for the optical frequency conversion. (orig.)

  10. Transient radiation responses of optical fibers: influence of MCVD process parameters

    International Nuclear Information System (INIS)

    Girard, Sylvain; Alessi, Antonino; Boukenter, Aziz; Ouerdane, Y.; Marcandella, Claude; Richard, Nicolas; Paillet, Philippe; Gaillardin, Marc; Raine, Melanie

    2012-01-01

    A dedicated set of fibers elaborated via the Modified Chemical Vapor Deposition (MCVD) technique is used to study the influence of composition and drawing parameters on their responses to an X-ray pulse representative of the radiation environments associated with Megajoule class lasers. These canonical fibers were designed to highlight the impact of these parameters on the amplitude and kinetics of the transient pulsed X-ray Radiation Induced Attenuation (RIA) at room temperature. From pre-forms differing by their core composition, three optical fibers were elaborated by varying the tension and speed during the drawing process. No or only slight RIA change results from the tested variations in drawing process parameters of Ge-doped, F-doped, and pure-silica-core fibers. This study reveals that the drawing process is not the main parameter to be optimized in order to enhance the radiation tolerance of MCVD specialty optical fibers for the LMJ harsh environment. From the hardness assurance point of view, a specialty fiber sufficiently tolerant to this environment should be robust against changes in the drawing process. The origins of the RIA observed in the different fibers are discussed on the basis of spectral decomposition of their measured RIA spectra, using sets of defects from the literature and related to the different core dopants. This analysis highlights the limits of the well-known defect set to reproduce the RIA above 1 for Ge-doped fibers whereas self-trapped holes and chlorine-related species seem responsible for the transient responses of pure-silica-core and F-doped fibers. (authors)

  11. Moessbauer study of defects in molybdenum and chromium irradiated with ions

    International Nuclear Information System (INIS)

    Troyan, V.A.; Bogdanov, V.V.; Ivanyushkin, E.M.; Pen'kov, Yu.P.

    1980-01-01

    Effects of ion irradiation of monocrystalline molybdenum and polycrystalline chromium with Co-57 impurity were studied by Moessbauer effect. Molybdenum specimens were irradiated by He + ions at accelerators with 40 keV energy. Chromium specimens were irradiated by hydrogen ions with 1.2 MeV energy up to integral 2x10 17 -2x10 19 ion/cm 2 doses. It is shown, that defect introduction into the source matrix by irradiation results in change of gamma-resonance line form and effect value. The observed effects of defect influence on spectrum parameters are discussed. It is concluded, that study of Moessbauer spectra parameters of diluted Co-57 solutions in matrices of different metals permits to determine dynamics of movement of impurity atoms and defects in metals irradiated with ions [ru

  12. Neutron cross sections for defect production by high-energy displacement cascades in copper

    International Nuclear Information System (INIS)

    Heinisch, H.L.; Mann, F.M.

    1983-08-01

    Defect production cross sections for copper have been devised, based on computer simulations of displacement cascades. One thousand cascades ranging in energy from 200 eV to 200 keV were generated with the MARLOWE computer code. The cascades were subjected to a semi-empirical cascade quenching procedure and to short-term annealing with the ALSOME computer code. Functions were fitted to the numbers of defects produced as a function of primary knock-on atom (PKA) damage energy for the following defect types: 1) the total number of point defects after quenching and after short-term annealing, 2) the numbers of free interstitials and free vacancies after shortterm annealing, and 3) the numbers and sizes of vacancy and interstitial clusters after shortterm annealing. In addition, a function describing the number of distinct damage regions (lobes) per cascade was fitted to results of a graphical analysis of the cascade configurations. The defect production functions have been folded into PKA spectra using the NJOY nuclear data processing code system with ENDF/B-V nuclear data to yield neutron cross sections for defect production in copper. The free vacancy cross section displays much less variation with neutron energy than the cross sections for damage energy or total point defects

  13. Neutron cross sections for defect production by high energy displacement cascades in copper

    International Nuclear Information System (INIS)

    Heinisch, H.L.; Mann, F.M.

    1984-01-01

    Defect production cross sections for copper have been devised, based on computer simulations of displacement cascades. One thousand cascades ranging in energy from 200 eV to 200 keV were generated with the MARLOWE computer code. The cascades were subjected to a semi-empirical cascade quenching procedure and to short-term annealing with the ALSOME computer code. Functions were fitted to the numbers of defects produced as a function of primary knock-on atom (PKA) damage energy for the following defect types: 1) the total number of point defects after quenching and after short-term annealing, 2) the numbers of free interstitials and free vacancies after short-term annealing, and 3) the numbers and sizes of vacancy and interstitial clusters after short-term annealing. In addition, a function describing the number of distinct damage regions (lobes) per cascade was fitted to results of a graphical analysis of the cascade configurations. The defect production functions have been folded into PKA spectra using the NJOY nuclear data processing code system with ENDF/B-V nuclear data to yield neutron cross sections for defect production in copper. The free vacancy cross section displays much less variation with neutron energy than the cross sections for damage energy or total point defects. (orig.)

  14. Electron irradiation-induced defects in ZnO studied by positron annihilation

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.Q. [Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)]. E-mail: zhiquanchen@hotmail.com; Maekawa, M. [Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Kawasuso, A. [Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Sakai, S. [Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Naramoto, H. [Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

    2006-04-01

    ZnO crystals were subjected to 3 MeV electron irradiation up to a high dose of 5.5x10{sup 18} cm{sup -2}. The production and recovery of vacancy defects were studied by positron annihilation spectroscopy. The increase of positron lifetime and Doppler broadening S parameter after irradiation indicates introduction of V {sub Zn} related defects. Most of these vacancies are annealed at temperatures below 200 {sup o}C. However, after annealing at around 400 {sup o}C, secondary defects are produced. All the vacancy defects are annealed out at around 700 {sup o}C.

  15. Electron beam generation and structure of defects in carbon and boron nitride nano-tubes

    Energy Technology Data Exchange (ETDEWEB)

    Zobelli, A

    2007-10-15

    The nature and role of defects is of primary importance to understand the physical properties of C and BN (boron nitride) single walled nano-tubes (SWNTs). Transmission electron microscopy (TEM) is a well known powerful tool to study the structure of defects in materials. However, in the case of SWNTs, the electron irradiation of the TEM may knock out atoms. This effect may alter the native structure of the tube, and has also been proposed as a potential tool for nano-engineering of nano-tubular structures. Here we develop a theoretical description of the irradiation mechanism. First, the anisotropy of the emission energy threshold is obtained via density functional based calculations. Then, we numerically derive the total Mott cross section for different emission sites of carbon and boron nitride nano-tubes with different chiralities. Using a dedicated STEM (Scanning Transmission Electron Microscope) microscope with experimental conditions optimised on the basis of derived cross-sections, we are able to control the generation of defects in nano-tubular systems. Either point or line defects can be obtained with a spatial resolution of a few nanometers. The structure, energetics and electronics of point and line defects in BN systems have been investigated. Stability of mono- and di- vacancy defects in hexagonal boron nitride layers is investigated, and their activation energies and reaction paths for diffusion have been derived using the nudged elastic band method (NEB) combined with density functional based techniques. We demonstrate that the appearance of extended linear defects under electron irradiation is more favorable than a random distribution of point defects and this is due to the existence of preferential sites for atom emission in the presence of pre-existing defects, rather than thermal vacancy nucleation and migration. (author)

  16. Electron beam generation and structure of defects in carbon and boron nitride nano-tubes

    International Nuclear Information System (INIS)

    Zobelli, A.

    2007-10-01

    The nature and role of defects is of primary importance to understand the physical properties of C and BN (boron nitride) single walled nano-tubes (SWNTs). Transmission electron microscopy (TEM) is a well known powerful tool to study the structure of defects in materials. However, in the case of SWNTs, the electron irradiation of the TEM may knock out atoms. This effect may alter the native structure of the tube, and has also been proposed as a potential tool for nano-engineering of nano-tubular structures. Here we develop a theoretical description of the irradiation mechanism. First, the anisotropy of the emission energy threshold is obtained via density functional based calculations. Then, we numerically derive the total Mott cross section for different emission sites of carbon and boron nitride nano-tubes with different chiralities. Using a dedicated STEM (Scanning Transmission Electron Microscope) microscope with experimental conditions optimised on the basis of derived cross-sections, we are able to control the generation of defects in nano-tubular systems. Either point or line defects can be obtained with a spatial resolution of a few nanometers. The structure, energetics and electronics of point and line defects in BN systems have been investigated. Stability of mono- and di- vacancy defects in hexagonal boron nitride layers is investigated, and their activation energies and reaction paths for diffusion have been derived using the nudged elastic band method (NEB) combined with density functional based techniques. We demonstrate that the appearance of extended linear defects under electron irradiation is more favorable than a random distribution of point defects and this is due to the existence of preferential sites for atom emission in the presence of pre-existing defects, rather than thermal vacancy nucleation and migration. (author)

  17. Interatomic potentials and the simulation of lattice defects in metals

    International Nuclear Information System (INIS)

    Heugten, W.F.W.M. van.

    1979-01-01

    The computer simulation technique is applied to investigate the properties of point defects and line defects in metals. For that purpose crystallites are constructed in which these defects are simulated. In the case of line defects (dislocations) the initial positions of the atoms, surrounding the dislocations, are determined using the elastic theory of anisotropic media. Hereafter the atoms in such crystallites are allowed to relax to there minimum potential energy positions under the influence of the interatomic forces. These forces are derived from interatomic interaction potentials. These potentials are together with the boundary conditions of the simulated crystallite the main input data in these computer simulation models. The metals considered include molybdenum, tungsten and tantalum. (Auth.)

  18. Effects of intrinsic defects on the electronic structure and magnetic properties of CoFe{sub 2}O{sub 4}: A first-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Y.L.; Fan, W.B. [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Hou, Y.H., E-mail: hyhhyl@163.com [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Guo, K.X. [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Ouyang, Y.F. [Department of Physics, Guangxi University, Nanning 530004 (China); Liu, Z.W. [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640 (China)

    2017-05-01

    The cobalt ferrite (CoFe{sub 2}O{sub 4}) with spinel structure has achieved a great interest as a very important magnetic material which has covered a wide range of applications. The formation condition and energy of possible intrinsic point defects have been investigated by the first-principles calculations, and the effects of the intrinsic point defects on the electronic and magnetic properties of CoFe{sub 2}O{sub 4} have been analyzed. It is found that the growth conditions have a great effect on the formation energy of intrinsic point defects, and each point defect with its fully ionized state is the most stable for the intrinsic point defects with various charge states. In an oxygen rich environment, the cation vacancies are easy to form shallow acceptors, which is conducive to the strength of the p-type conductivity. While in the metal rich environment, the oxygen vacancies tend to form donors which lead to the n-type conductivity. There exists extra levels in the band gap when point defects are present, resulting in a reduction of the band gap. The net magnetic moment depends highly on the defects. - Highlights: • The intrinsic defects in CoFe{sub 2}O{sub 4} were investigated by first-principles calculation. • The effects of intrinsic defects on the electronic structures and magnetic properties of CoFe{sub 2}O{sub 4} were analyzed.

  19. Room-temperature ferromagnetism in graphite driven by 2D networks of point defects

    Czech Academy of Sciences Publication Activity Database

    Červenka, Jiří; Katsnelson, M.I.; Flipse, C.F.J.

    2009-01-01

    Roč. 5, č. 11 (2009), s. 840-844 ISSN 1745-2473 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetism * graphite * defects * magnetic force microscopy * superconductive quantum interference device Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 15.491, year: 2009 http://www.nature.com/nphys/journal/v5/n11/full/nphys1399.html

  20. Influence of defects on the ordering degree of nanopores made from anodic aluminum oxide

    International Nuclear Information System (INIS)

    Yu Wenhui; Fei Guangtao; Chen Xiaomeng; Xue Fanghong; Xu Xijin

    2006-01-01

    Anodic aluminum oxide (AAO) templates with highly ordered nanoporous structure were fabricated by means of the electrochemical anodization under the constant anodic voltage and electrolyte temperature. The dependence of the ordering degree of nanopores on the point defects, dislocation configuration and grain boundary of aluminum is qualitatively analyzed. Experiment results show that the size of the ordered region of nanopores depends strongly on the point defects, dislocation cell configuration

  1. Defect-detection algorithm for noncontact acoustic inspection using spectrum entropy

    Science.gov (United States)

    Sugimoto, Kazuko; Akamatsu, Ryo; Sugimoto, Tsuneyoshi; Utagawa, Noriyuki; Kuroda, Chitose; Katakura, Kageyoshi

    2015-07-01

    In recent years, the detachment of concrete from bridges or tunnels and the degradation of concrete structures have become serious social problems. The importance of inspection, repair, and updating is recognized in measures against degradation. We have so far studied the noncontact acoustic inspection method using airborne sound and the laser Doppler vibrometer. In this method, depending on the surface state (reflectance, dirt, etc.), the quantity of the light of the returning laser decreases and optical noise resulting from the leakage of light reception arises. Some influencing factors are the stability of the output of the laser Doppler vibrometer, the low reflective characteristic of the measurement surface, the diffused reflection characteristic, measurement distance, and laser irradiation angle. If defect detection depends only on the vibration energy ratio since the frequency characteristic of the optical noise resembles white noise, the detection of optical noise resulting from the leakage of light reception may indicate a defective part. Therefore, in this work, the combination of the vibrational energy ratio and spectrum entropy is used to judge whether a measured point is healthy or defective or an abnormal measurement point. An algorithm that enables more vivid detection of a defective part is proposed. When our technique was applied in an experiment with real concrete structures, the defective part could be extracted more vividly and the validity of our proposed algorithm was confirmed.

  2. Characterization of defects in Si and SiO2-Si using positrons

    International Nuclear Information System (INIS)

    Asoka-Kumar, P.; Lynn, K.G.

    1993-01-01

    Positron annihilation spectroscopy of overlayers, interfaces, and buried regions of semiconductors has seen a rapid growth in recent years. The characteristics of the annihilation gamma rays depend strongly on the local environment of the annihilation sites, and can be used to probe defect concentrations in a range inaccessible to conventional defect probes. Some of the recent success of the technique in examining low concentrations of point defects in technologically important Si-based structures is discussed

  3. Gauge turbulence, topological defect dynamics, and condensation in Higgs models

    Energy Technology Data Exchange (ETDEWEB)

    Gasenzer, Thomas [Institut für Theoretische Physik, Universität Heidelberg, Philosophenweg 16, 69120 Heidelberg (Germany); ExtreMe Matter Institute EMMI, GSI, Planckstraße 1, D-64291 Darmstadt (Germany); McLerran, Larry [Physics Department, Bldg. 510A, Brookhaven National Laboratory, Upton, NY 11973 (United States); RIKEN BNL Research Center, Bldg. 510A, Brookhaven National Laboratory, Upton, NY 11973 (United States); Physics Department, China Central Normal University, Wuhan (China); Pawlowski, Jan M.; Sexty, Dénes [Institut für Theoretische Physik, Universität Heidelberg, Philosophenweg 16, 69120 Heidelberg (Germany); ExtreMe Matter Institute EMMI, GSI, Planckstraße 1, D-64291 Darmstadt (Germany)

    2014-10-15

    The real-time dynamics of topological defects and turbulent configurations of gauge fields for electric and magnetic confinement are studied numerically within a 2+1D Abelian Higgs model. It is shown that confinement is appearing in such systems equilibrating after a strong initial quench such as the overpopulation of the infrared modes. While the final equilibrium state does not support confinement, metastable vortex defect configurations appearing in the gauge field are found to be closely related to the appearance of physically observable confined electric and magnetic charges. These phenomena are seen to be intimately related to the approach of a non-thermal fixed point of the far-from-equilibrium dynamical evolution, signaled by universal scaling in the gauge-invariant correlation function of the Higgs field. Even when the parameters of the Higgs action do not support condensate formation in the vacuum, during this approach, transient Higgs condensation is observed. We discuss implications of these results for the far-from-equilibrium dynamics of Yang–Mills fields and potential mechanisms of how confinement and condensation in non-Abelian gauge fields can be understood in terms of the dynamics of Higgs models. These suggest that there is an interesting new class of dynamics of strong coherent turbulent gauge fields with condensates.

  4. Gauge turbulence, topological defect dynamics, and condensation in Higgs models

    International Nuclear Information System (INIS)

    Gasenzer, Thomas; McLerran, Larry; Pawlowski, Jan M.; Sexty, Dénes

    2014-01-01

    The real-time dynamics of topological defects and turbulent configurations of gauge fields for electric and magnetic confinement are studied numerically within a 2+1D Abelian Higgs model. It is shown that confinement is appearing in such systems equilibrating after a strong initial quench such as the overpopulation of the infrared modes. While the final equilibrium state does not support confinement, metastable vortex defect configurations appearing in the gauge field are found to be closely related to the appearance of physically observable confined electric and magnetic charges. These phenomena are seen to be intimately related to the approach of a non-thermal fixed point of the far-from-equilibrium dynamical evolution, signaled by universal scaling in the gauge-invariant correlation function of the Higgs field. Even when the parameters of the Higgs action do not support condensate formation in the vacuum, during this approach, transient Higgs condensation is observed. We discuss implications of these results for the far-from-equilibrium dynamics of Yang–Mills fields and potential mechanisms of how confinement and condensation in non-Abelian gauge fields can be understood in terms of the dynamics of Higgs models. These suggest that there is an interesting new class of dynamics of strong coherent turbulent gauge fields with condensates

  5. New Analysis of Solute Drag in AA5754 by Precise Determination of Point Defect Generation and the Orowan Relation

    Science.gov (United States)

    Diak, Brad J.; Penlington, Alex; Saimoto, Shig

    Serrated deformation in Al-Mg alloys creates problems that affect consumer product acceptability. This effect is usually attributed to the Portevin-LeChâtelier effect. In this study the inverse PLC effect due to solute drag on moving dislocations is examined in AA5754. The drag mechanism is dependent on the diffusivity of the solute which is in-turn dependent on the point defect evolution during deformation. Experimental determination of the parabolic James-Barnett drag profile by strain rate change experiments indicates the peak stress is centered at 1.5×10-9m/s, which requires a mechanical formation energy for vacancies of 0.4eV/at. A new slip-based constitutive relation was used to determine the evolution of vacancy volume fraction with deformation with strain, which is greater than the volume fraction of vacancies predicted by the solute drag profile.

  6. Defect engineering of the electronic transport through cuprous oxide interlayers

    KAUST Repository

    Fadlallah, Mohamed M.

    2016-06-03

    The electronic transport through Au–(Cu2O)n–Au junctions is investigated using first-principles calculations and the nonequilibrium Green’s function method. The effect of varying the thickness (i.e., n) is studied as well as that of point defects and anion substitution. For all Cu2O thicknesses the conductance is more enhanced by bulk-like (in contrast to near-interface) defects, with the exception of O vacancies and Cl substitutional defects. A similar transmission behavior results from Cu deficiency and N substitution, as well as from Cl substitution and N interstitials for thick Cu2O junctions. In agreement with recent experimental observations, it is found that N and Cl doping enhances the conductance. A Frenkel defect, i.e., a superposition of an O interstitial and O substitutional defect, leads to a remarkably high conductance. From the analysis of the defect formation energies, Cu vacancies are found to be particularly stable, in agreement with earlier experimental and theoretical work.

  7. A study of the electrical properties of defects in silicon

    International Nuclear Information System (INIS)

    Blood, A.M.

    1998-01-01

    This work contains the most comprehensive qualitative and quantitative electron beam induced current (EBIC) study of recombination at contaminated defects in silicon. It is also a rigorous quantitative investigation of the effect of hydrogen on individual transition metal contaminated defects. In addition, the recombination behaviour exhibited by point and extended defects has been investigated using EBIC and deep level transient spectroscopy (DLTS). As a result of these measurements, techniques for the preparation of transition metal contaminated specimens have been refined. Successful hydrogen passivation of copper, nickel and iron contaminated silicon specimens containing oxidation-induced stacking faults has been achieved in two experimental systems. It is found that hydrogen passivates those states that are deepest in the semiconductor band gap in preference to those that are shallow. Furthermore, it has been concluded that during hydrogen passivation treatment, even at low temperatures, unwanted metallic impurities can be introduced. Three types of recombination behaviour have been identified from the defects-studied in this work and they are discussed with relevance to present recombination models. An investigation of the recombination behaviour of defects that lie in the depletion region and in the specimen bulk has concluded that the recombination type observed is independent of the depth of the defect. Evidence for the presence of compound defects showing mixed recombination behaviour type is presented. In conclusion, it is postulated that the transition metal impurities introduce a 'band of states' with a range of energies rather than a single energy state. This proposal is provided as an explanation for the recombination types found in this work and the effect of the hydrogen passivation. This work is placed in context of previous investigations into the behaviour of dislocations in silicon in the presence of transition metals, and the ability of

  8. Transition mechanism of Stone-Wales defect in armchair edge (5,5) carbon nanotube

    Science.gov (United States)

    Setiadi, Agung; Suprijadi

    2015-04-01

    We performed first principles calculations of Stone-Wales (SW) defects in armchair edge (5,5) carbon nanotube (CNT) by the density functional theory (DFT). Stone Wales (SW) defect is one kind of topological defect on the CNT. There are two kind of SW defect on the armchair edge (5,5) CNT, such as longitudinal and circumference SW defect. Barrier energy in the formation of SW defects is a good consideration to become one of parameter in controlling SW defects on the CNT. Our calculation results that a longitudinal SW defect is more stable than circumference SW defect. However, the barrier energy of circumference SW defect is lower than another one. We applied Climbing Image Nudge Elastic Band (CI-NEB) method to find minimum energy path (MEP) and barrier energy for SW defect transitions. We also found that in the case of circumference SW defect, armchair edge (5,5) CNT become semiconductor with the band gap of 0.0544 eV.

  9. On the performance limiting behavior of defect clusters in commercial silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B.L.; Chen, W.; Jones, K. [National Renewable Energy Lab., Golden, CO (United States); Gee, J. [Sandia National Labs., Albuquerque, NM (United States)

    1998-09-01

    The authors report the observation of defect clusters in high-quality, commercial silicon solar cell substrates. The nature of the defect clusters, their mechanism of formation, and precipitation of metallic impurities at the defect clusters are discussed. This defect configuration influences the device performance in a unique way--by primarily degrading the voltage-related parameters. Network modeling is used to show that, in an N/P junction device, these regions act as shunts that dissipate power generated within the cell.

  10. Numerical modeling of mechanical behavior of multilayered composite plates with defects under static loading

    Science.gov (United States)

    Korepanov, V. V.; Serovaev, G. S.

    2017-06-01

    Evaluation of the mechanical state of a structure or its components in the process of operation based on detection of internal damages (damage detection) becomes especially important in such rapidly developing spheres of production as machine building, aerospace industry, etc. One of the most important features of these industries is the application of new types of materials among which polymer based composite materials occupy a significant position. Hence, they must have sufficient operational rigidity and strength. However, defects of various kinds may arise during the manufacture. Delamination is the most common defect in structures made from composite materials and represents a phenomenon that involves the complex fracture of layers and interlayer compounds. Among the reasons of delamination occurrence are: disposition of anti-adhesive lubricants, films; insufficient content of binder, high content of volatile elements; violation of the molding regime; poor quality of anti-adhesive coating on the surface of the tooling. One of the effective methods for analyzing the influence of defects is numerical simulation. With the help of numerical methods, it is possible to track the evolution of various parameters when the defect size and quantity change. In the paper, a multilayered plate of an equally resistant carbon fiber reinforced plastic was considered, with a thickness of each layer equal to 0.2 mm. Various static loading cases are studied: uniaxial tension, three and four-point bending. For each type of loading, a numerical calculation of the stress-strain state was performed for healthy and delaminated plates, with different number and size of the defects. Contact interaction between adjacent surfaces in the zone of delamination was taken into account.

  11. Defect analysis of BaSrFBr:Eu irradiated by X-ray

    International Nuclear Information System (INIS)

    Lee, C. Y.; Jeong, J. M.; Kim, J. H.

    2010-01-01

    The mechanical property of the BaSrFBr:Eu phosphor layer of X-ray image plates was investigated by using image quality (IQ), resolution (LP/mm), and coincidence Doppler broadening (CDB) positron annihilation. The screen samples of BaSrFBr:Eu phosphors were irradiated with hospital X-rays in the course of diagnostic radiography at an average rate of 20,000 times per year and were used for various periods of time. The LP/mm values of the irradiated BaSrFBr:Eu image plates varied between 2.4 and 2.0 for three years while the IQ values varied between 35 and 11 over the same period. CDB positron annihilation spectroscopy was used to analyze the defect structures in the phosphor layer. The S parameter values increased in correlation with increased exposure time, which indicated that more defects were generated. There was a positive relationship between the IQ and S parameters. Measurements of the defects indicate that most of the defects were likely to have been generated by the X-ray radiation.

  12. Production of UT Reference Blocks Containing Artificially Introduced Defects

    International Nuclear Information System (INIS)

    Kaya, A. A.; Ucuncuoglu, S.; Kurkcu, N.; Kandemir, A.; Arslan, H.

    2007-01-01

    Metallic blocks of Inconel 718 and Ti-6A1-4V alloys that contain artificially introduced defects of known type, size, shape and location were prepared to serve as calibration standards in ultrasonic inspection. The synthetic defects employed to serve as reflectors were all pertinent to the specific alloy systems used, i.e. compositional defects termed as 'dirty white' 'white spot' and 'freckle' for Inconel 718; 'hard-alpha' for titanium alloy. Furthermore, as a defect type common to all three materials, spherical voids of various sizes were also incorporated into these calibration blocks. The aim of this study is to introduce defects of known type and size into metallic blocks made of superalloy Inconel 718 and titanium Ti-6A1-4V alloy. The scope of the study entailed determination of the correct parameters for manufacturing processes involved. Based on the results of the preceding phases of this study, it was decided that the method of Vacuum Hot Pressing (VHP) was to be used in this project to manufacture the metallic block containing artificial defects

  13. Interaction between dangling bonds in vacancy-defects in silicon

    International Nuclear Information System (INIS)

    Caldas, M.J.; Fazzio, A.

    1983-01-01

    The 'defect-molecule' model in the simplest scheme (without configuration interaction) is reviewed and the concept of 'delocalized dangling-bonds' is explorated in the study of the interaction between the unsaturated hybrids of the mono and divacancy in silicon. The 'defect-molecule' hamiltonian is written in parametric form, and the parameters are extracted from full self-consistent calculations for both systems carried out through the MS-Xα molecular cluster model. (Author) [pt

  14. Self-organized defect strings in two-dimensional crystals.

    Science.gov (United States)

    Lechner, Wolfgang; Polster, David; Maret, Georg; Keim, Peter; Dellago, Christoph

    2013-12-01

    Using experiments with single-particle resolution and computer simulations we study the collective behavior of multiple vacancies injected into two-dimensional crystals. We find that the defects assemble into linear strings, terminated by dislocations with antiparallel Burgers vectors. We show that these defect strings propagate through the crystal in a succession of rapid one-dimensional gliding and rare rotations. While the rotation rate decreases exponentially with the number of defects in the string, the diffusion constant is constant for large strings. By monitoring the separation of the dislocations at the end points, we measure their effective interactions with high precision beyond their spontaneous formation and annihilation, and we explain the double-well form of the dislocation interaction in terms of continuum elasticity theory.

  15. Supersymmetric Conical Defects: Towards a string theoretic description of black hole formation

    NARCIS (Netherlands)

    Balasubramanian, V.; de Boer, J.; Keski-Vakkuri, E.; Ross, S.F.

    2001-01-01

    Conical defects, or point particles, in $AdS_3$ are one of the simplest non-trivial gravitating systems, and are particularly interesting because black holes can form from their collision. We embed the BPS conical defects of three dimensions into the N=4b supergravity in six dimensions, which arises

  16. Defect diffusion during annealing of low-energy ion-implanted silicon

    International Nuclear Information System (INIS)

    Bedrossian, P.J.; Caturla, M.J.; Diaz de la Rubia, T.

    1997-01-01

    The authors present a new approach for investigating the kinetics of defect migration during annealing of low-energy, ion-implanted silicon, employing a combination of computer simulations and atomic-resolution tunneling microscopy. Using atomically-clean Si(111)-7 x 7 as a sink for bulk point defects created by 5 keV Xe and Ar irradiation, they observe distinct, temperature-dependent surface arrival rates for vacancies and interstitials. A combination of simulation tools provides a detailed description of the processes that underlie the observed temperature-dependence of defect segregation, and the predictions of the simulations agree closely with the experimental observations

  17. Dynamical susceptibility near a long-wavelength critical point with a nonconserved order parameter

    Science.gov (United States)

    Klein, Avraham; Lederer, Samuel; Chowdhury, Debanjan; Berg, Erez; Chubukov, Andrey

    2018-04-01

    We study the dynamic response of a two-dimensional system of itinerant fermions in the vicinity of a uniform (Q =0 ) Ising nematic quantum critical point of d - wave symmetry. The nematic order parameter is not a conserved quantity, and this permits a nonzero value of the fermionic polarization in the d - wave channel even for vanishing momentum and finite frequency: Π (q =0 ,Ωm)≠0 . For weak coupling between the fermions and the nematic order parameter (i.e., the coupling is small compared to the Fermi energy), we perturbatively compute Π (q =0 ,Ωm)≠0 over a parametrically broad range of frequencies where the fermionic self-energy Σ (ω ) is irrelevant, and use Eliashberg theory to compute Π (q =0 ,Ωm) in the non-Fermi-liquid regime at smaller frequencies, where Σ (ω )>ω . We find that Π (q =0 ,Ω ) is a constant, plus a frequency-dependent correction that goes as |Ω | at high frequencies, crossing over to |Ω| 1 /3 at lower frequencies. The |Ω| 1 /3 scaling holds also in a non-Fermi-liquid regime. The nonvanishing of Π (q =0 ,Ω ) gives rise to additional structure in the imaginary part of the nematic susceptibility χ″(q ,Ω ) at Ω >vFq , in marked contrast to the behavior of the susceptibility for a conserved order parameter. This additional structure may be detected in Raman scattering experiments in the d - wave geometry.

  18. The effect of correlated and point defects on the vortex lattice melting transition in single-crystal YBa2Cu3O7-δ

    International Nuclear Information System (INIS)

    Kwok, W.K.; Fendrich, J.; Fleshler, S.; Welp, U.; Downey, J.; Crabtree, G.W.; Giapintzakis, J.

    1994-01-01

    The vortex melting transition T m in several untwinned and twinned crystals is measured resistively in fields up to 8T. A Lindemann criterion for vortex lattice melting is obtained in addition to a sharp hysteresis in the magnetoresistance at B m supporting a first-order phase transition. The anisotropy of twin boundary pinning and its reduction of the 'kink' in ρ(T) associated with the first-order melting transition is discussed in samples with very dilute twin boundaries. We also report on the direct suppression of the the melting transition by intrinsic pinning for H parallel ab and by electron-irradiation-induced point defects. (orig.)

  19. Study of crystalline defects in α-iron

    International Nuclear Information System (INIS)

    Dunlop, A.

    1981-01-01

    We study here the configurations of the defects produced in ferromagnetic metals (Fe, Co, Ni) during low-temperature irradiations. In the first part we find an anomalous shape of the damage production rate curves Δrho(.)(Δrho) (Δrho: resistivity increase; Δrho(.)=dΔrho/dPHI; PHI: irradiation fluence) of iron and nickel during neutron irradiations. We propose the following interpretation: - stability of the defect configurations created during low-temperature self-ion irradiations of these metals; - instability of these defect configurations where there is a sufficient cascade overlap. This agglomeration leads to a decrease of the average resistivity of the defects. Using this model, we can reproduce the iron results with the following parameters: - characteristic volume for the recovery: 3.3 x 10 -18 cm 3 ; - division of the average resistivity of the defects by 2.3 to 3 when they agglomerate. In the second part we study the influence of irradiation defects on the longitudinal magnetoresistance of the samples. The increase in the number of scattering centers (n, e - irradiations) makes the resistivity anisotropy (deltarho=rho// - rho perpendicular) change gradually from a region in which the 'normal' magnetoresistance is predominant to another in which the spontaneous anisotropy dominates. This last regime is studied with the two-current conduction model in ferromagnetics [fr

  20. Modeling local structure using crystal field and spin Hamiltonian parameters: the tetragonal FeK3+-OI2- defect center in KTaO3 crystal

    International Nuclear Information System (INIS)

    Gnutek, P; Rudowicz, C; Yang, Z Y

    2009-01-01

    The local structure and the spin Hamiltonian (SH) parameters, including the zero-field-splitting (ZFS) parameters D and (a+2F/3), and the Zeeman g factors g || and g perpendicular , are theoretically investigated for the Fe K 3+ -O I 2- center in KTaO 3 crystal. The microscopic SH (MSH) parameters are modeled within the framework of the crystal field (CF) theory employing the CF analysis (CFA) package, which also incorporates the MSH modules. Our approach takes into account the spin-orbit interaction as well as the spin-spin and spin-other-orbit interactions omitted in previous studies. The superposition model (SPM) calculations are carried out to provide input CF parameters for the CFA/MSH package. The combined SPM-CFA/MSH approach is used to consider various structural models for the Fe K 3+ -O I 2- defect center in KTaO 3 . This modeling reveals that the off-center displacement of the Fe 3+ ions, Δ 1 (Fe 3+ ), combined with an inward relaxation of the nearest oxygen ligands, Δ 2 (O 2- ), and the existence of the interstitial oxygen O I 2- give rise to a strong tetragonal crystal field. This finding may explain the large ZFS experimentally observed for the Fe K 3+ -O I 2- center in KTaO 3 . Matching the theoretical MSH predictions with the available structural data as well as electron magnetic resonance (EMR) and optical spectroscopy data enables predicting reasonable ranges of values of Δ 1 (Fe 3+ ) and Δ 2 (O 2- ) as well as the possible location of O I 2- ligands around Fe 3+ ions in KTaO 3 . The defect structure model obtained using the SPM-CFA/MSH approach reproduces very well the ranges of the experimental SH parameters D, g || and g perpendicular and importantly yields not only the correct magnitude of D but also the sign, unlike previous studies. More reliable predictions may be achieved when experimental data on (a+2F/3) and/or crystal field energy levels become available. Comparison of our results with those arising from alternative models existing