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Sample records for pnp sige hbts

  1. De-embedding and Modelling of pnp SiGe HBTs

    DEFF Research Database (Denmark)

    Hadziabdic, Dzenan; Jiang, Chenhui; Johansen, Tom Keinicke

    2007-01-01

    In this work we present a direct parameter extraction procedure for SiGe pnp heterojunction bipolar transistor (HBT) large-signal and small-signal models. Test structure parasitics are removed from the measured small-signal parameters using an open-short de-embedding technique, improved to accoun...

  2. Heavy Ion Current Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, Robert A.; Vizkelethy, Gyorgy; McMorrow, Dale; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philipe; Duhanel, Olivier; Phillips, Stanley D.; Sutton, Akil K.; hide

    2009-01-01

    Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

  3. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    Science.gov (United States)

    Prakash, A. P. Gnana; Praveen, K. C.; Pushpa, N.; Cressler, John D.

    2015-05-01

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to 60Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  4. Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

    Directory of Open Access Journals (Sweden)

    Chie-In Lee

    2016-01-01

    Full Text Available Noise parameters of silicon germanium (SiGe heterojunction bipolar transistors (HBTs for different sizes are investigated in the breakdown region for the first time. When the emitter length of SiGe HBTs shortens, minimum noise figure at breakdown decreases. In addition, narrower emitter width also decreases noise figure of SiGe HBTs in the avalanche region. Reduction of noise performance for smaller emitter length and width of SiGe HBTs at breakdown resulted from the lower noise spectral density resulting from the breakdown mechanism. Good agreement between experimental and simulated noise performance at breakdown is achieved for different sized SiGe HBTs. The presented analysis can benefit the RF circuits operating in the breakdown region.

  5. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in; Praveen, K. C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India); Pushpa, N. [Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025 (India); Cressler, John D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332 (United States)

    2015-05-15

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  6. SiGe HBTs Optimization for Wireless Power Amplifier Applications

    Directory of Open Access Journals (Sweden)

    Pierre-Marie Mans

    2010-01-01

    Full Text Available This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile is conducted in order to improve the fT values at high injection levels.

  7. Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS

    Science.gov (United States)

    De Barros, O.; Le Tron, B.; Woods, R. C.; Giroult-Matlakowski, G.; Vincent, G.; Brémond, G.

    1996-08-01

    This paper reports an electrical characterisation of the emitter-base junction of Si pseudo-HBTs and SiGe HBTs fabricated in a CMOS compatible single polysilicon self-aligned process. From the reverse characteristics it appears that the definition of the emitter-base junction by plasma etching induces peripheral defects that increase the base current of the transistors. Deep level transient spectroscopy measurements show a deep level in the case of SiGe base, whose spatial origin is not fully determinate up to now.

  8. A Passive X-Band Double Balanced Mixer Utilizing Diode Connected SiGe HBTs

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld

    2013-01-01

    In this paper, a passive double balanced mixer in SiGe HBT technology is presented. Due to lack of suitable passive mixing elements in the technology, the mixing elements are formed by diode connected HBTs. The mixer is optimized for use in doppler radars and is highly linear with 1 dB compressio...

  9. Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs

    Energy Technology Data Exchange (ETDEWEB)

    Praveen, K.C.; Pushpa, N.; Naik, P.S. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570 006 (India); Cressler, John D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA (United States); Tripathi, Ambuj [Inter University Accelerator Centre (IUAC), New Delhi 110 067 (India); Gnana Prakash, A.P., E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570 006 (India)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Total dose effects of 50 MeV Li3+ ion on 50 GHz SiGe HBTs is investigated. Black-Right-Pointing-Pointer Ion irradiated results were compared with Co-60 gamma results. Black-Right-Pointing-Pointer 50 MeV Li ions create more damage in E-B spacer oxide when compared to Co-60 gamma radiation. Black-Right-Pointing-Pointer Co-60 gamma radiation create more damage in STI oxide when compared to 50 MeV Li ions. Black-Right-Pointing-Pointer Worst case total dose radiation effects can be studied using Pelletron accelerator facilities. - Abstract: We have investigated the effects of 50 MeV lithium ion irradiation on the DC electrical characteristics of first-generation silicon-germanium heterojunction bipolar transistors (50 GHz SiGe HBTs) in the dose range of 600 krad to 100 Mrad. The results of 50 MeV Li{sup 3+} ion irradiation on the SiGe HBTs are compared with 63 MeV proton and Co-60 gamma irradiation results in the same dose range in order to understand the damage induced by different LET species. The radiation response of emitter-base (EB) spacer oxide and shallow trench isolation (STI) oxide to different irradiation types are discussed in this paper. We have also focused on the efficacy in the application of a Pelletron accelerator to study total dose irradiation studies in SiGe HBTs.

  10. Characterisation of diode-connected SiGe BiCMOS HBTs for space applications

    Science.gov (United States)

    Venter, Johan; Sinha, Saurabh; Lambrechts, Wynand

    2016-02-01

    Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high current gain and low-output resistance due to its vertical profile, BiCMOS technology is increasingly becoming a preferred technology for researchers to realise next-generation space-based optoelectronic applications. BiCMOS transistors have inherent radiation hardening, to an extent predictable cryogenic performance and monolithic integration potential. SiGe BiCMOS transistors and p-n junction diodes have been researched and used as a primary active component for over the last two decades. However, further research can be conducted with diode-connected heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. This work investigates these characteristics and models devices by adapting standard fabrication technology components. This work focuses on measurements of the current-voltage relationship (I-V curves) and capacitance-voltage relationships (C-V curves) of diode-connected HBTs. One configuration is proposed and measured, which is emitterbase shorted. The I-V curves are measured for various temperature points ranging from room temperature (300 K) to the temperature of liquid nitrogen (77 K). The measured datasets are used to extract a model of the formed diode operating at cryogenic temperatures and used as a standard library component in computer aided software designs. The advantage of having broad-range temperature models of SiGe transistors becomes apparent when considering implementation of application-specific integrated circuits and silicon-based infrared radiation photodetectors on a single wafer, thus shortening interconnects and lowering parasitic interference, decreasing the overall die size and improving on overall cost-effectiveness. Primary applications include space-based geothermal

  11. Degradation of Au–Ti contacts of SiGe HBTs during electromagnetic field stress

    International Nuclear Information System (INIS)

    Alaeddine, A; Genevois, C; Cuvilly, F; Daoud, K; Kadi, M

    2011-01-01

    This paper addresses electromagnetic field stress effects on SiGe heterojunction bipolar transistors (HBTs)' reliability issues, focusing on the relationship between the stress-induced current and device structure degradations. The origin of leakage currents and electrical parameter shifts in failed transistors has been studied by complementary failure analysis techniques. Characterization of the structure before and after ageing was performed by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). For the stressed samples, interface deformations of the titanium (Ti) thin film around all gold (Au) contacts have been clearly detected. These degradations include localized interface reaction between Au and Ti layers as well as their lateral atomic migration causing a significant reduction of Ti thickness. EDS analysis of the disordered region which is near the Si 3 N 4 interface has shown significant signals from Au. These observations could be attributed to the coupling between high current densities induced by stress and thermal effects due to local heating effects

  12. The effects of hot carrier and swift heavy ion irradiation on electrical characteristics of advanced 200 GHz SiGe HBTs

    Energy Technology Data Exchange (ETDEWEB)

    Vinayakprasanna, N. H.; Praveen, K. C.; Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006 (India); Cressler, J. D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta-30332, GA (United States)

    2016-05-23

    The 200 GHz SiGe HBTs were irradiated with 80 MeV Carbon ions up to a total dose of 100 Mrad to understand the degradation in electrical characteristics. The degradation in the electrical characteristics of SiGe HBTs was also studied by mixed mode electrical stress up to 10,000 s. The electrical characteristics were measured before and after every total dose and after fixed stress time. The normalized peak h{sub FE} of the stressed and irradiated SiGe HBTs are compared to estimate the equivalent stress time for a particular total dose. These correlations are drawn for the first time and the results will establish a systematic relation between stress time and total dose.

  13. The effects of hot carrier and swift heavy ion irradiation on electrical characteristics of advanced 200 GHz SiGe HBTs

    International Nuclear Information System (INIS)

    Vinayakprasanna, N. H.; Praveen, K. C.; Prakash, A. P. Gnana; Cressler, J. D.

    2016-01-01

    The 200 GHz SiGe HBTs were irradiated with 80 MeV Carbon ions up to a total dose of 100 Mrad to understand the degradation in electrical characteristics. The degradation in the electrical characteristics of SiGe HBTs was also studied by mixed mode electrical stress up to 10,000 s. The electrical characteristics were measured before and after every total dose and after fixed stress time. The normalized peak h_F_E of the stressed and irradiated SiGe HBTs are compared to estimate the equivalent stress time for a particular total dose. These correlations are drawn for the first time and the results will establish a systematic relation between stress time and total dose.

  14. Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

    International Nuclear Information System (INIS)

    Sun Ya-Bin; Li Xiao-Jin; Zhang Jin-Zhong; Shi Yan-Ling

    2017-01-01

    In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors (HBTs) with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts: a link base region under a spacer oxide, an intrinsic transistor region under the emitter window, and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the small-signal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node, which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model. (paper)

  15. Heavy Ion Microbeam and Broadbeam Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, Robert A.; McMorrow, Dale; Vizkelethy, Gyorgy; Dodd, Paul E.; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philippe; Duhamel, Olivier; Phillips, Stanley D.; hide

    2009-01-01

    SiGe HBT heavy ion current transients are measured using microbeam and both high- and low-energy broadbeam sources. These new data provide detailed insight into the effects of ion range, LET, and strike location.

  16. Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, Robert A.; McMorrow, Dale; Vizkelethy, Gyorgy; Ferlet-Cavrois, Veronique; Baggio, Jacques; Duhamel, Olivier; Moen, Kurt A.; Phillips, Stanley D.; Diestelhorst, Ryan M.; hide

    2009-01-01

    SiGe HBT heavy ion-induced current transients are measured using Sandia National Laboratories microbeam and high- and low-energy broadbeam sources at the Grand Accelerateur National d'Ions Lourds and the University of Jyvaskyla. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET.

  17. Heavy Ion Microbeam- and Broadbeam-Induced Current Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, R. A.; McMorrow, D.; Vizkelethy, G.; Ferlet-Cavrois, V.; Baggio, J.; Duhamel, O.; Moen, K. A.; Phillips, S. D.; Diestelhorst, R. M.; hide

    2009-01-01

    IBM 5AM SiGe HBT is device-under-test. High-speed measurement setup. Low-impedance current transient measurements. SNL, JYFL, GANIL. Microbeam to broadbeam position inference. Improvement to state-of-the-art. Microbeam (SNL) transients reveal position dependent heavy ion response, Unique response for different device regions Unique response for different bias schemes. Similarities to TPA pulsed-laser data. Broadbeam transients (JYFL and GANIL) provide realistic heavy ion response. Feedback using microbeam data. Overcome issues of LET and ion range with microbeam. **Angled Ar-40 data in full paper. Data sets yield first-order results, suitable for TCAD calibration feedback.

  18. Anomalous dose rate effects in gamma irradiated SiGe heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Banerjee, G.; Niu, G.; Cressler, J.D.; Clark, S.D.; Palmer, M.J.; Ahlgren, D.C.

    1999-01-01

    Low dose rate (LDR) cobalt-60 (0.1 rad(Si)/s) gamma irradiated Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) were studied. Comparisons were made with devices irradiated with 300 rad(Si)/s gamma radiation to verify if LDR radiation is a serious radiation hardness assurance (RHA) issue. Almost no LDR degradation was observed in this technology up to 50 krad(Si). The assumption of the presence of two competing mechanisms is justified by experimental results. At low total dose (le20 krad), an anomalous base current decrease was observed which is attributed to self-annealing of deep-level traps to shallower levels. An increase in base current at larger total doses is attributed to radiation induced generation-recombination (G/R) center generation. Experiments on gate-assisted lateral PNP transistors and 2D numerical simulations using MEDICI were used to confirm these assertions

  19. Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier

    International Nuclear Information System (INIS)

    Qin, Guoxuan; Jiang, Ningyue; Seo, Jung-Hun; Cho, Namki; Van der Weide, Daniel; Ma, Zhenqiang; Ponchak, George E; Ma, Pingxi; Stetson, Scott; Racanelli, Marco

    2010-01-01

    The performance of a SiGe heterojunction bipolar transistor (HBT) millimetre-wave power amplifier (PA) operating at cryogenic temperature was reported and analysed for the first time. A 24 GHz two-stage medium PA employing common-emitter and common-base SiGe power HBTs in the first and the second stage, respectively, showed a significant power gain increase at 77 K in comparison with that measured at room temperature. Detailed analyses indicate that cryogenic operation of SiGe HBT-based PAs mainly affects (improves) the performance of the SiGe HBTs in the circuits due to transconductance enhancement through magnified, favourable changes of SiGe bandgap due to cooling (ΔE g /kT) and minimized thermal effects, with little influence on the passive components of the circuits

  20. Small- and large-signal modeling of InP HBTs in transferred-substrate technology

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas

    2014-01-01

    In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing...

  1. Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas

    2013-01-01

    In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from...

  2. Diffusion pipes at PNP switching transistors

    International Nuclear Information System (INIS)

    Sachelarie, D.; Postolache, C.; Gaiseanu, F.

    1976-01-01

    The appearance of the ''diffusion pipes'' greatly affects the fabrication of the PNP high-frequency/very-fast-switching transistors. A brief review of the principal problems connected to the presence of these ''pipes'' is made. A research program is presented which permitted the fabrication of the PNP switching transistors at ICCE-Bucharest, with transition frequency fsub(T) = 1.2 GHz and storage time tsub(s) = 4.5 ns. (author)

  3. GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain

    Science.gov (United States)

    Heidelberger, Christopher; Fitzgerald, Eugene A.

    2018-04-01

    Heterojunction bipolar transistors (HBTs) with GaAs0.825P0.175 bases and collectors and In0.40Ga0.60P emitters were integrated monolithically onto Si substrates. The HBT structures were grown epitaxially on Si via metalorganic chemical vapor deposition, using SiGe compositionally graded buffers to accommodate the lattice mismatch while maintaining threading dislocation density at an acceptable level (˜3 × 106 cm-2). GaAs0.825P0.175 is used as an active material instead of GaAs because of its higher bandgap (increased breakdown voltage) and closer lattice constant to Si. Misfit dislocation density in the active device layers, measured by electron-beam-induced current, was reduced by making iterative changes to the epitaxial structure. This optimized process culminated in a GaAs0.825P0.175/In0.40Ga0.60P HBT grown on Si with a DC current gain of 156. By considering the various GaAsP/InGaP HBTs grown on Si substrates alongside several control devices grown on GaAs substrates, a wide range of threading dislocation densities and misfit dislocation densities in the active layers could be correlated with HBT current gain. The effect of threading dislocations on current gain was moderated by the reduction in minority carrier lifetime in the base region, in agreement with existing models for GaAs light-emitting diodes and photovoltaic cells. Current gain was shown to be extremely sensitive to misfit dislocations in the active layers of the HBT—much more sensitive than to threading dislocations. We develop a model for this relationship where increased base current is mediated by Fermi level pinning near misfit dislocations.

  4. Prototype plant for nuclear process heat (PNP)

    International Nuclear Information System (INIS)

    Duerrfeld, R.; Kraut-Giesen, G.

    1982-01-01

    1. Goals: Verification of owner's interests during experimental and engineering phase of nuclear coal gasification. 2. Method: 2.1 Witnessing and evaluating of experimental results from running test facilities. 2.2 Influencing experimental program. 2.3 Participation in important meetings of PNP-project. 3. Results: From present point of view the realization of nuclear coal gasification with a nuclear high temperature reactor (HTR) in accordance with the present technical status as well as meeting the existing safety regulations seems to be feasable. R+D-work will be needed for affirmation of design. The gasification of hard coal basing on the allothermal principal has proved to be possible. The examination of the gasifier on a pilot scale is not yet done. The design work for the pilot plant should be started immediately, particularly keeping in mind the decision for erection of PNP in 1990. The calculation of production costs in comparison to autothermal gasification processes is promising better economics, if uncertainties of investment calculation are deemed to be neglectable. (orig.) [de

  5. SiGe BiCMOS manufacturing platform for mmWave applications

    Science.gov (United States)

    Kar-Roy, Arjun; Howard, David; Preisler, Edward; Racanelli, Marco; Chaudhry, Samir; Blaschke, Volker

    2010-10-01

    TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz fT/fMAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm2 stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.

  6. EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Weimann, Nils; Doerner, Ralf

    2017-01-01

    In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrate...

  7. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

    Science.gov (United States)

    England, Troy; Lilly, Michael; Curry, Matthew; Carr, Stephen; Carroll, Malcolm

    Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will introduce two new amplifier topologies that provide excellent gain versus power tradeoffs using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The AC HBT allows in-situ adjustment of power dissipation during an experiment and can provide gain in the millikelvin temperature regime while dissipating less than 500 nW. The AC Current Amplifier maximizes gain at nearly 800 A/A. We will also show results of using these amplifiers with SETs at 4 K. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout.

  8. Structural bioinformatics study of PNP from Schistosoma mansoni

    International Nuclear Information System (INIS)

    Silveira, Nelson Jose Freitas da; Uchoa, Hugo Brandao; Canduri, Fernanda; Pereira, Jose Henrique; Camera, Joao Carlos; Basso, Luiz Augusto; Palma, Mario Sergio; Santos, Diogenes Santiago; Filgueira de Azevedo, Walter

    2004-01-01

    The parasite Schistosoma mansoni lacks the de novo pathway for purine biosynthesis and depends on salvage pathways for its purine requirements. Schistosomiasis is endemic in 76 countries and territories and amongst the parasitic diseases ranks second after malaria in terms of social and economic impact and public health importance. The PNP is an attractive target for drug design and it has been submitted to extensive structure-based design. The atomic coordinates of the complex of human PNP with inosine were used as template for starting the modeling of PNP from S. mansoni complexed with inosine. Here we describe the model for the complex SmPNP-inosine and correlate the structure with differences in the affinity for inosine presented by human and S. mansoni PNPs

  9. Pnp gene modification for improved xylose utilization in Zymomonas

    Science.gov (United States)

    Caimi, Perry G G; Qi, Min; Tao, Luan; Viitanen, Paul V; Yang, Jianjun

    2014-12-16

    The endogenous pnp gene encoding polynucleotide phosphorylase in the Zymomonas genome was identified as a target for modification to provide improved xylose utilizing cells for ethanol production. The cells are in addition genetically modified to have increased expression of ribose-5-phosphate isomerase (RPI) activity, as compared to cells without this genetic modification, and are not limited in xylose isomerase activity in the absence of the pnp modification.

  10. Ka-band IQ vector modulator employing GaAs HBTs

    International Nuclear Information System (INIS)

    Cao Yuxiong; Wu Danyu; Chen Gaopeng; Jin Zhi; Liu Xinyu

    2011-01-01

    The importance of high-performance, low-cost and millimeter-wave transmitters for digital communications and radar applications is increasing. The design and performance of a Ka-band balanced in-phase and quadrature-phase (I-Q) type vector modulator, using GaAs heterojunction bipolar transistors (HBTs) as switching elements, are presented. The balanced technique is used to remove the parasitics of the HBTs to result in near perfect constellations. Measurements of the monolithic microwave integrated circuit (MMIC) chip with a size of 1.89 x 2.26 mm 2 demonstrate an amplitude error below 1.5 dB and the phase error within 3 0 between 26 and 40 GHz except for a singular point at 35.6 GHz. The results show that the technique is suitable for millimeter-wave digital communications. (semiconductor integrated circuits)

  11. Radiation effect of gate controlled lateral PNP BJTs

    International Nuclear Information System (INIS)

    Xi Shanbin; Zhou Dong; Lu Wu; Ren Diyuan; Wen Lin; Sun Jing; Wang Zhikuan

    2012-01-01

    Design and fabricate a new test structure of bipolar device: the gate controlled later PNP bipolar transistor (GCLPNP BJT), then sealed it together with the normal lateral PNP bipolar transistor which is made under the same manufacture process. Then 60 Co-γ radiation effects and annealing behaviors of these two structures are investigated. The results show that the response about base current, collector current, access base current and normalized current gain of GCLPNP bipolar transistor are almost identical to the normal one. Radiation induced defects in the GCLPNP bipolar transistor is separated quantitatively. Studying on the quantitative change of radiation induced defects in the domestic gate controlled bipolar transistor should be a useful way to research the change of radiation induced charges of normal PNP bipolar transistor. (authors)

  12. Efficient Fludarabine-Activating PNP From Archaea as a Guidance for Redesign the Active Site of E. Coli PNP.

    Science.gov (United States)

    Cacciapuoti, Giovanna; Bagarolo, Maria Libera; Martino, Elisa; Scafuri, Bernardina; Marabotti, Anna; Porcelli, Marina

    2016-05-01

    The combination of the gene of purine nucleoside phosphorylase (PNP) from Escherichia coli and fludarabine represents one of the most promising systems in the gene therapy of solid tumors. The use of fludarabine in gene therapy is limited by the lack of an enzyme that is able to efficiently activate this prodrug which, consequently, has to be administered in high doses that cause serious side effects. In an attempt to identify enzymes with a better catalytic efficiency than E. coli PNP towards fludarabine to be used as a guidance on how to improve the activity of the bacterial enzyme, we have selected 5'-deoxy-5'-methylthioadenosine phosphorylase (SsMTAP) and 5'-deoxy-5'-methylthioadenosine phosphorylase II (SsMTAPII), two PNPs isolated from the hyperthermophilic archaeon Sulfolobus solfataricus. Substrate specificity and catalytic efficiency of SsMTAP and SsMTAPII for fludarabine were analyzed by kinetic studies and compared with E. coli PNP. SsMTAP and SsMTAPII share with E. coli PNP a comparable low affinity for the arabinonucleoside but are better catalysts of fludarabine cleavage with k(cat)/K(m) values that are 12.8-fold and 6-fold higher, respectively, than those reported for the bacterial enzyme. A computational analysis of the interactions of fludarabine in the active sites of E. coli PNP, SsMTAP, and SsMTAPII allowed to identify the crucial residues involved in the binding with this substrate, and provided structural information to improve the catalytic efficiency of E. coli PNP by enzyme redesign. © 2015 Wiley Periodicals, Inc.

  13. Electrocatalytic Azide Oxidation Mediated by a Rh(PNP) Pincer Complex

    NARCIS (Netherlands)

    Rebreyend, Christophe; Gloaguen, Yann; Lutz, Martin; Van Der Vlugt, Jarl Ivar; Siewert, Inke; Schneider, Sven; Bruin, Bas De

    2017-01-01

    One-electron oxidation of the rhodium(I) azido complex [Rh(N3)(PNP)] (5), bearing the neutral, pyridine-based PNP ligand 2,6-bis(di-tert-butylphosphinomethyl)pyridine, leads to instantaneous and selective formation of the mononuclear rhodium(I) dinitrogen complex [Rh(N2)(PNP)]+ (9+). Interestingly,

  14. Electrocatalytic Azide Oxidation Mediated by a Rh(PNP) Pincer Complex

    NARCIS (Netherlands)

    Rebreyend, C.; Gloaguen, Y.; Lutz, M.; van der Vlugt, J.I.; Siewert, I.; Schneider, S.; de Bruin, B.

    2017-01-01

    One-electron oxidation of the rhodium(I) azido complex [Rh(N3)(PNP)] ( 5 ), bearing the neutral, pyridine-based PNP ligand 2,6-bis(di-tert-butylphosphinomethyl)pyridine, leads to instantaneous and selective formation of the mononuclear rhodium(I) dinitrogen complex [Rh(N2)(PNP)]+ ( 9 +).

  15. Shot noise reduction in the AlGaAs/GaAs- and InGaP/GaAs-based HBTs

    Science.gov (United States)

    Sakalas, Paulius; Schroeter, Michael; Zampardi, Peter; Zirath, Herbert

    2003-05-01

    Noise parameters of AlGaAs/GaAs and InGaP/GaAs HBTs were measured in microwave frequency range and modeled using the small-signal equivalent circuit approach. Correlated current noise sources in the base and collector currents with thermal noise in the circuit resistive elements were accounted for by the model and yielded good agreement with the measured data. This enabled an extraction of the different noise source contributions to minimum noise figure (NFmin) in AlGaAs/GaAs and InGaP/GaAs HBTs. Decomposition of the (NFmin) in to the different contributors showed that the main noise sources in investigated HBTs are correlated base and collector current shot noise. The observed minimum of NFmin versus frequency at lower collector current is explained by the reduction of the emitter/base junction shot noise component due to the spike in the emitter/base junction and associated accumulation of the quasi-thermalized electrons forming a space charge, which screens the electron transfer through the barrier. The bias (VCE) increase creates an efficient electric field in collector/base junction, capable of 'washing out' the accumulated charge. Such shot noise reduction in HBTs could be exploited in the LNA for the RF application.

  16. Ballistic transport of graphene pnp junctions with embedded local gates

    International Nuclear Information System (INIS)

    Nam, Seung-Geol; Ki, Dong-Keun; Kim, Youngwook; Kim, Jun Sung; Lee, Hu-Jong; Park, Jong Wan

    2011-01-01

    We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither deposition of dielectric material on the graphene nor electron-beam irradiation, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observation of ballistic and phase-coherent transport across a local gate 130 nm wide, which is about an order of magnitude wider than reported previously. Furthermore, in our scheme, we demonstrated independent control of the carrier density in the local-gate region, with a conductance map very much distinct from those of top-gated devices. This was caused by the electric field arising from the global back gate being strongly screened by the embedded local gate. Our scheme allows the realization of ideal multipolar graphene junctions with ballistic carrier transport.

  17. Towards understanding the E. coli PNP binding mechanism and FRET absence between E. coli PNP and formycin A.

    Science.gov (United States)

    Prokopowicz, Małgorzata; Greń, Bartosz; Cieśla, Joanna; Kierdaszuk, Borys

    2017-11-01

    The aim of this study is threefold: (1) augmentation of the knowledge of the E. coli PNP binding mechanism; (2) explanation of the previously observed 'lack of FRET' phenomenon and (3) an introduction of the correction (modified method) for FRET efficiency calculation in the PNP-FA complexes. We present fluorescence studies of the two E. coli PNP mutants (F159Y and F159A) with formycin A (FA), that indicate that the aromatic amino acid is indispensable in the nucleotide binding, additional hydroxyl group at position 159 probably enhances the strength of binding and that the amino acids pair 159-160 has a great impact on the spectroscopic properties of the enzyme. The experiments were carried out in hepes and phosphate buffers, at pH7 and 8.3. Two methods, a conventional and a modified one, that utilizes the dissociation constant, for calculations of the energy transfer efficiency (E) and the acceptor-to-donor distance (r) between FA and the Tyr (energy donor) were employed. Total difference spectra were calculated for emission spectra (λ ex 280nm, 295nm, 305nm and 313nm) for all studied systems. Time-resolved techniques allowed to conclude the existence of a specific structure formed by amino acids at positions 159 and 160. The results showed an unexpected pattern change of FRET in the mutants, when compared to the wild type enzyme and a probable presence of a structure created between 159 and 160 residue, that might influence the binding efficiency. Additionally, we confirmed the indispensable role of the modification of the FRET efficiency (E) calculation on the fraction of enzyme saturation in PNP-FA systems. Copyright © 2017 Elsevier B.V. All rights reserved.

  18. Synthesize and preliminary biodistribution of 99Tcm(CO)3-PNP5

    International Nuclear Information System (INIS)

    Chu Jinfeng; Kong Dejing; Li Bin; Wang Xuebin

    2007-01-01

    99 Tc m (CO) 3 -PNP5 (PNP5: bis (dimethoxypropylphosphinoethyl) ethoxyethyl- amine) is synthesized through a simple two-step procedure by ligand exchange reaction and its biological characters are studied. Labelling conditions of 99 Tc m (CO) 3 -PNP5 are optimized. Its labelling yield and radio chemical purity are all over 90% determined by TLC. The results of partition coefficient, charge character and stability studies indicate that 99 Tc m (CO) 3 -PNP5 is a lipophilic cation ligand with complex with positiue charge and good stability. Biological properties of 99 Tc m (CO) 3 -PNP5 and 99 Tc m (CO) 3 -PNP5 (T) (adding Tween) are valued contrastively in mice. The results show that 99 Tc m (CO) 3 -PNP5(T) have higher myocardial uptake, lower liver uptake, and higher heart-to-liver ratio. It indicats that the biological properties of 99 Tc m (CO) 3 -PNP5 are improved obviously by adding Tween-80. (authors)

  19. Evaluation of temperature-enhanced gain degradation of verticle npn and lateral pnp bipolar transistors

    International Nuclear Information System (INIS)

    Witczak, S.C.; Lacoe, R.C.; Galloway, K.F.

    1997-01-01

    The effect of dose rate on radiation-induced gain degradation is compared for verticle npn and lateral pnp bipolar transistors. High dose rate irradiations at elevated temperatures are more effective at simulating low dose rate degradation in the lateral pnp transistors

  20. Analytical solution of the PNP equations at AC applied voltage

    International Nuclear Information System (INIS)

    Golovnev, Anatoly; Trimper, Steffen

    2012-01-01

    A symmetric binary polymer electrolyte subjected to an AC voltage is considered. The analytical solution of the Poisson–Nernst–Planck equations (PNP) is found and analyzed for small applied voltages. Three distinct time regimes offering different behavior can be discriminated. The experimentally realized stationary behavior is discussed in detail. An expression for the external current is derived. Based on the theoretical result a simple method is suggested of measuring the ion mobility and their concentration separately. -- Highlights: ► Analytical solution of Poisson–Nernst–Planck equations. ► Binary polymer electrolyte subjected to an external AC voltage. ► Three well separated time scales exhibiting different behavior. ► The experimentally realized stationary behavior is discussed in detail. ► A method is proposed measuring the mobility and the concentration separately.

  1. Forged hollows (alloy 617) for PNP-hot gas collectors

    International Nuclear Information System (INIS)

    Hofmann, F.

    1984-01-01

    When the partners in the PNP-Project decided to manufacture components, such as gas collectors, from material of type alloy 617, the problem arose that required semi-fabricated products, especially forged hollows weighing several tons each, were not available. As VDM (Vereinigte Deutsche Metallwerke AG) had already experience in production of other semi-fabricated products of this alloy, attempts were made based on this knowledge, to develop manufacturing methods for forged hollows. The aim was to produce hollows as long as possible, and to keep the welding cost minimum. Welded seams are always critical during fabrication, as well as during later inspection under actual operating conditions. The three stage plan used to perform the above task illustrates the development aims is described

  2. Elucidation of the Signal Transduction Pathways Activated by the Plant Natriuretic Peptide AtPNP-A

    KAUST Repository

    Turek, Ilona

    2014-11-01

    Plant natriuretic peptides (PNPs) comprise a novel class of hormones that share some sequence similarity in the active site with their animal analogues that function as regulators of salt and water balance. A PNP present in Arabidopsis thaliana (AtPNP-A) has been assigned a role in abiotic and biotic stress responses, and the recombinant protein has been demonstrated to elicit cyclic guanosine monophosphate (cGMP)-dependent stomatal guard cell opening, regulate ion movements, and induce osmoticum-dependent water uptake. Although the importance of the hormone in maintaining ion and fluid homeostasis has been established, key components of the AtPNP-A-dependent signal transduction pathway remain unknown. Since identification of the binding partners of AtPNP-A, including its receptor(s), is fundamental to understanding the mode of its action at the molecular level, comprehensive protein-protein interaction studies, involving yeast two-hybrid screening, affinity-based assays, protein cross-linking and co-immunoprecipitation followed by mass spectrometric (MS) analyses have been performed. Several candidate binding partners of AtPNP-A identified with at least two independent methods were subsequently expressed as recombinant proteins, purified, and the specificity of their interactions with the recombinant AtPNP-A was verified using surface plasmon resonance. Several specific binary interactants of AtPNP-A were subjected to functional assays aimed at unraveling the consequences of the interactions in planta. These experiments have revealed that reactive oxygen species (ROS) are novel secondary messengers involved in the transduction of AtPNP-A signal in suspension-cultured cells of A. thaliana (Col-0). Further insight into the AtPNP-A dependent signalling events occurring in suspension-cultured cells in ROS-dependent or ROS-independent manner have been obtained from the large-scale proteomics study employing tandem mass tag (TMT) labelling followed by MS analysis to

  3. The effects of gamma irradiation on neutron displacement sensitivity of lateral PNP bipolar transistors

    International Nuclear Information System (INIS)

    Wang, Chenhui; Chen, Wei; Liu, Yan; Jin, Xiaoming; Yang, Shanchao; Qi, Chao

    2016-01-01

    The effects of gamma irradiation on neutron displacement sensitivity of four types of lateral PNP bipolar transistors (LPNPs) with different neutral base widths, emitter widths and the doping concentrations of the epitaxial base region are studied. The physical mechanisms of the effects are explored by defect analysis using deep level transient spectroscopy (DLTS) techniques and numerical simulations of recombination process in the base region of the lateral PNP bipolar transistors, and are verified by the experiments on gate-controlled lateral PNP bipolar transistors (GCLPNPs) manufactured in the identical commercial bipolar process with different gate bias voltage. The results indicate that gamma irradiation increases neutron displacement damage sensitivity of lateral PNP bipolar transistors and the mechanism of this phenomenon is that positive charge induced by gamma irradiation enhances the recombination process in the defects induced by neutrons in the base region, leading to larger recombination component of base current and greater gain degradation.

  4. The effects of gamma irradiation on neutron displacement sensitivity of lateral PNP bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chenhui, E-mail: wangchenhui@nint.ac.cn; Chen, Wei; Liu, Yan; Jin, Xiaoming; Yang, Shanchao; Qi, Chao

    2016-09-21

    The effects of gamma irradiation on neutron displacement sensitivity of four types of lateral PNP bipolar transistors (LPNPs) with different neutral base widths, emitter widths and the doping concentrations of the epitaxial base region are studied. The physical mechanisms of the effects are explored by defect analysis using deep level transient spectroscopy (DLTS) techniques and numerical simulations of recombination process in the base region of the lateral PNP bipolar transistors, and are verified by the experiments on gate-controlled lateral PNP bipolar transistors (GCLPNPs) manufactured in the identical commercial bipolar process with different gate bias voltage. The results indicate that gamma irradiation increases neutron displacement damage sensitivity of lateral PNP bipolar transistors and the mechanism of this phenomenon is that positive charge induced by gamma irradiation enhances the recombination process in the defects induced by neutrons in the base region, leading to larger recombination component of base current and greater gain degradation.

  5. Mechanisms of ionizing-radiation-induced gain degradation in lateral PNP BJTs

    International Nuclear Information System (INIS)

    Schmidt, D.M.; Wu, A.; Schrimpf, R.D.; Pease, R.L.; Combs, W.E.

    1996-01-01

    The physical mechanisms for gain degradation in laterals PNP bipolar transistors are examined experimentally and through simulation. The effect of increased surface recombination velocity at the base surface is moderated by positive oxide charge

  6. The effects of emitter-tied field plates on lateral PNP ionizing radiation response

    International Nuclear Information System (INIS)

    Barnaby, H.J.; Schrimpf, R.D.; Cirba, C.R.; Pease, R.L.; Fleetwood, D.M.; Kosier, S.L.

    1998-03-01

    Radiation response comparisons of lateral PNP bipolar technologies reveal that device hardening may be achieved by extending the emitter contact over the active base. The emitter-tied field plate suppresses recombination of carriers with interface traps

  7. Elucidation of the Signal Transduction Pathways Activated by the Plant Natriuretic Peptide AtPNP-A

    KAUST Repository

    Turek, Ilona

    2014-01-01

    Plant natriuretic peptides (PNPs) comprise a novel class of hormones that share some sequence similarity in the active site with their animal analogues that function as regulators of salt and water balance. A PNP present in Arabidopsis thaliana (At

  8. Band structure analysis in SiGe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Amato, Michele [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy); Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy); Palummo, Maurizia [European Theoretical Spectroscopy Facility (ETSF) (Italy); CNR-INFM-SMC, Dipartimento di Fisica, Universita di Roma, ' Tor Vergata' , via della Ricerca Scientifica 1, 00133 Roma (Italy); Ossicini, Stefano, E-mail: stefano.ossicini@unimore.it [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy) and Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy) and European Theoretical Spectroscopy Facility - ETSF (Italy) and Centro Interdipartimentale ' En and Tech' , Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy)

    2012-06-05

    One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

  9. Band structure analysis in SiGe nanowires

    International Nuclear Information System (INIS)

    Amato, Michele; Palummo, Maurizia; Ossicini, Stefano

    2012-01-01

    One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

  10. Degradation of SiGe devices by proton irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ohyama, Hidenori; Hayama, Kiyoteru [Kumamoto National Coll. of Technology, Nishigoshi (Japan); Vanhellemont, J; Takami, Yasukiyo; Sunaga, Hiromi; Nashiyama, Isamu; Uwatoko, Yoshiya; Poortmans, J; Caymax, M

    1997-03-01

    The degradation and recovery behavior of strained Si{sub 1-x}Ge{sub x} diodes and heterojunction bipolar transistors (HBTs) by irradiated by protons are studied. The degradation of device performance and the generation of lattice defects are reported as a function of fluence and germanium content and also compared extensively with previous results obtained on electron and neutron irradiated devices. In order to study the recovery behavior of the irradiated devices, isochronal annealing is performed. The radiation source dependence of the degradation is discussed taking into account the number of knock-on atoms and the nonionizing energy loss (NIEL). (author)

  11. A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors

    Science.gov (United States)

    Okuda, Takafumi; Kimoto, Tsunenobu; Suda, Jun

    2018-04-01

    We investigate the electrical characteristics of 1-kV pnp SiC bipolar junction transistors (BJTs) and compare them with those of npn SiC BJTs. The base resistance, current gain, and blocking capability are characterized. It is found that the base resistance of pnp SiC BJTs is two orders of magnitude lower than that of npn SiC BJTs. However, the obtained current gains are low below unity in pnp SiC BJTs, whereas npn SiC BJTs exhibit a current gain of 14 without surface passivation. The reason for the poor current gain of pnp SiC BJTs is discussed.

  12. Prototype plant for nuclear process heat (PNP), reference phase

    International Nuclear Information System (INIS)

    Fladerer, R.; Schrader, L.

    1982-07-01

    The coal gasification processes using nuclear process heat being developed within the framwork of the PNP project, have the advantages of saving feed coal, improving efficiency, reducing emissions, and stabilizing energy costs. One major gasification process is the hydrogasification of coal for producing SNG or gas mixture of carbon monoxide and hydrogen; this process can also be applied in a conventional route. The first steps to develop this process were planning, construction and operation of a semi-technical pilot plant for hydrogasification of coal in a fluidized bed having an input of 100 kg C/h. Before the completion of the development phase (reference phase) describing here, several components were tested on part of which no operational experience had so far been gained; these were the newly developed devices, e.g. the inclined tube for feeding coal into the fluidized bed, and the raw gas/hydrogenation gas heat exchanger for utilizing the waste heat of the raw gas leaving the gasifier. Concept optimizing of the thoroughly tested equipment parts led to an improved operational behaviour. Between 1976 and 1980, the semi-technical pilot plant was operated for about 19,400 hours under test conditions, more than 7,400 hours of which it has worked under gasification conditions. During this time approx. 1,100 metric tons of dry brown coal and more than 13 metric tons of hard coal were gasified. The longest coherent operational phase under gasification conditions was 748 hours in which 85.4 metric tons of dry brown coal were gasified. Carbon gasification rates up to 82% and methane contents in the dry raw gas (free of N 2 ) up to 48 vol.% were obtained. A detailed evaluation of the test results provided information of the results obtained previously. For the completion of the test - primarily of long-term tests - the operation of the semi-technical pilot plant for hydrogasification of coal is to be continued up to September 1982. (orig.) [de

  13. Synthesis and reactivity of TADDOL-based chiral Fe(II) PNP pincer complexes-solution equilibria between κ(2)P,N- and κ(3)P,N,P-bound PNP pincer ligands.

    Science.gov (United States)

    Holzhacker, Christian; Stöger, Berthold; Carvalho, Maria Deus; Ferreira, Liliana P; Pittenauer, Ernst; Allmaier, Günter; Veiros, Luis F; Realista, Sara; Gil, Adrià; Calhorda, Maria José; Müller, Danny; Kirchner, Karl

    2015-08-07

    Treatment of anhydrous FeX2 (X = Cl, Br) with 1 equiv. of the asymmetric chiral PNP pincer ligands PNP-R,TAD (R = iPr, tBu) with an R,R-TADDOL (TAD) moiety afforded complexes of the general formula [Fe(PNP)X2]. In the solid state these complexes adopt a tetrahedral geometry with the PNP ligand coordinated in κ(2)P,N-fashion, as shown by X-ray crystallography and Mössbauer spectroscopy. Magnetization studies led to a magnetic moment very close to 4.9μB reflecting the expected four unpaired d-electrons (quintet ground state). In solution there are equilibria between [Fe(κ(3)P,N,P-PNP-R,TAD)X2] and [Fe(κ(2)P,N-PNP-R,TAD)X2] complexes, i.e., the PNP-R,TAD ligand is hemilabile. At -50 °C these equilibria are slow and signals of the non-coordinated P-TAD arm of the κ(2)P,N-PNP-R,TAD ligand can be detected by (31)P{(1)H} NMR spectroscopy. Addition of BH3 to a solution of [Fe(PNP-iPr,TAD)Cl2] leads to selective boronation of the pendant P-TAD arm shifting the equilibrium towards the four-coordinate complex [Fe(κ(2)P,N-PNP-iPr,TAD(BH3))Cl2]. DFT calculations corroborate the existence of equilibria between four- and five-coordinated complexes. Addition of CO to [Fe(PNP-iPr,TAD)X2] in solution yields the diamagnetic octahedral complexes trans-[Fe(κ(3)P,N,P-PNP-iPr,TAD)(CO)X2], which react further with Ag(+) salts in the presence of CO to give the cationic complexes trans-[Fe(κ(3)P,N,P-PNP-iPr,TAD)(CO)2X](+). CO addition most likely takes place at the five coordinate complex [Fe(κ(3)P,N,P-PNP-iPr,TAD)X2]. The mechanism for the CO addition was also investigated by DFT and the most favorable path obtained corresponds to the rearrangement of the pincer ligand first from a κ(2)P,N- to a κ(3)P,N,P-coordination mode followed by CO coordination to [Fe(κ(3)P,N,P-PNP-iPr,TAD)X2]. Complexes bearing tBu substituents do not react with CO. Moreover, in the solid state none of the tetrahedral complexes are able to bind CO.

  14. Surface tension and density of Si-Ge melts

    Science.gov (United States)

    Ricci, Enrica; Amore, Stefano; Giuranno, Donatella; Novakovic, Rada; Tuissi, Ausonio; Sobczak, Natalia; Nowak, Rafal; Korpala, Bartłomiej; Bruzda, Grzegorz

    2014-06-01

    In this work, the surface tension and density of Si-Ge liquid alloys were determined by the pendant drop method. Over the range of measurements, both properties show a linear temperature dependence and a nonlinear concentration dependence. Indeed, the density decreases with increasing silicon content exhibiting positive deviation from ideality, while the surface tension increases and deviates negatively with respect to the ideal solution model. Taking into account the Si-Ge phase diagram, a simple lens type, the surface tension behavior of the Si-Ge liquid alloys was analyzed in the framework of the Quasi-Chemical Approximation for the Regular Solutions model. The new experimental results were compared with a few data available in the literature, obtained by the containerless method.

  15. Efficient tunable luminescence of SiGe alloy sheet polymers

    International Nuclear Information System (INIS)

    Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

    2001-01-01

    Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si 1-x Ge x ) 2 precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. [copyright] 2001 American Institute of Physics

  16. Substrate Effects in Wideband SiGe HBT Mixer Circuits

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

    2005-01-01

    are also applied to predict short distance substrate coupling effects. Simulation results using extracted equivalent circuit models and substrate coupling networks are compared with experimental results obtained on a wideband mixer circuit implemented in a 0.35 μm, 60 GHz ft SiGe HBT BiCMOS process.......In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations...

  17. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

    OpenAIRE

    Zhang, L; Guo, Y; Hassan, VV; Tang, K; Foad, MA; Woicik, JC; Pianetta, P; Robertson, John; McIntyre, PC

    2016-01-01

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native Si...

  18. Formation of p-n-p junction with ionic liquid gate in graphene

    International Nuclear Information System (INIS)

    He, Xin; Tang, Ning; Duan, Junxi; Zhang, Yuewei; Lu, Fangchao; Xu, Fujun; Yang, Xuelin; Gao, Li; Wang, Xinqiang; Shen, Bo; Ge, Weikun

    2014-01-01

    Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics

  19. Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

    KAUST Repository

    Dong, Y.

    2014-07-26

    Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.

  20. Silicon-germanium (Sige) nanostructures production, properties and applications in electronics

    CERN Document Server

    Usami, N

    2011-01-01

    Nanostructured silicon-germanium (SiGe) provides the prospect of novel and enhanced electronic device performance. This book reviews the materials science and technology of SiGe nanostructures, including crystal growth, fabrication of nanostructures, material properties and applications in electronics.$bNanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and mo...

  1. Long-Term Reliability of SiGe/Si HBTs From Accelerated Lifetime Testing

    Science.gov (United States)

    Bhattacharya, Pallab

    2001-01-01

    Accelerated lifetime tests were performed on double-mesa structure Si(0.7)Ge(0.3)/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175 C-275 C. The transistors (with 5x20 sq micron emitter area) have DC current gains approx. 40-50 and f(sub T) and f(sub max) of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REED has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35 x 10(exp 4) A/sq cm current density operation is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation.

  2. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

    2016-01-01

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  3. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang

    2016-10-28

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  4. Unravelling The Mechanism of Basic Aqueous Methanol Dehydrogenation Catalyzed By Ru-PNP Pincer Complexes

    DEFF Research Database (Denmark)

    Alberico, Elisabetta; Lennox, Alastair J. J.; Vogt, Lydia K.

    2016-01-01

    Ruthenium PNP complex 1a (RuH(CO)Cl(HN(C2H4Pi-Pr2)2)) represents a state-of-the-art catalyst for low-temperature (methanol dehydrogenation to H2 and CO2. Herein, we describe an investigation that combines experiment, spectroscopy, and theory to provide a mechanistic rationale...

  5. Reduced thermal conductivity due to scattering centers in p-type SiGe alloys

    International Nuclear Information System (INIS)

    Beaty, J.S.; Rolfe, J.L.; Vandersande, J.; Fleurial. J.P.

    1992-01-01

    This paper reports that a theoretical model has been developed that predicts that the addition of ultra-fine, inert, phonon-scattering centers to SiGe thermoelectric material will reduce its thermal conductivity and improve its figure-of-merit. To investigate this prediction, ultra-fine particulates (20 Angstrom to 200 Angstrom) of boron nitride have been added to boron doped, p-type, 80/20 SiGe. All previous SiGe samples produced from ultra-fine SiGe powder without additions had lower thermal conductivities than standard SiGe, but high temperature (1525 K) heat treatment increased their thermal conductivity back to the value for standard SiGe. Transmission Electron Microscopy has been used to confirm the presence of occluded particulates and X-ray diffraction has been used to determine the composition to be BN

  6. Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

    KAUST Repository

    Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Gnade, Bruce E.

    2018-01-01

    that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising

  7. Correlator receiver architecture with PnpN optical thyristor operating as optical hard-limiter

    Science.gov (United States)

    Kang, Tae-Gu; Ho Lee, Su; Park, Soonchul

    2011-07-01

    We propose novel correlator receiver architecture with a PnpN optical thyristor operating as optical hard-limiter, and demonstrate a multiple-access interference rejection of the proposed correlator receiver. The proposed correlator receiver is composed of the 1×2 splitter, optical delay line, 2×1 combiner, and fabricated PnpN optical thyristor. The proposed correlator receiver enhances the system performance because it excludes some combinations of multiple-access interference patterns from causing errors as in optical code-division multiple access systems with conventional optical receiver shown in all previous works. It is found that the proposed correlator receiver can fully reject the interference signals generated by decoding processing and multiple access for two simultaneous users.

  8. What a difference a 5f element makes: trivalent and tetravalent uranium halide complexes supported by one and two bis[2-(diisopropylphosphino)-4-methylphenyl]amido (PNP) ligands.

    Science.gov (United States)

    Cantat, Thibault; Scott, Brian L; Morris, David E; Kiplinger, Jaqueline L

    2009-03-02

    The coordination behavior of the bis[2-(diisopropylphosphino)-4-methylphenyl]amido ligand (PNP) toward UI3(THF)4 and UCl4 has been investigated to access new uranium(III) and uranium(IV) halide complexes supported by one and two PNP ligands. The reaction between (PNP)K (6) and 1 equiv of UI3(THF)4 afforded the trivalent halide complex (PNP)UI2(4-tBu-pyridine)2 (7) in the presence of 4-tert-butylpyridine. The same reaction carried out with UCl4 and no donor ligand gave [(PNP)UCl3]2 (8), in which the uranium coordination sphere in the (PNP)UCl3 unit is completed by a bridging chloride ligand. When UCl4 is reacted with 1 equiv (PNP)K (6) in the presence of THF, trimethylphosphine oxide (TMPO), or triphenylphosphineoxide (TPPO), the tetravalent halide complexes (PNP)UCl3(THF) (9), (PNP)UCl3(TMPO)2 (10), and (PNP)UCl3(TPPO) (11), respectively, are formed in excellent yields. The bis(PNP) complexes of uranium(III), (PNP)2UI (12), and uranium(IV), (PNP)2UCl2 (13), were easily isolated from the analogous reactions between 2 equiv of 6 and UI3(THF)4 or UCl4, respectively. Complexes 12 and 13 represent the first examples of complexes featuring two PNP ligands coordinated to a single metal center. Complexes 7-13 have been characterized by single-crystal X-ray diffraction and 1H and 31P NMR spectroscopy. The X-ray structures demonstrate the ability of the PNP ligand to adopt new coordination modes upon coordination to uranium. The PNP ligand can adopt both pseudo-meridional and pseudo-facial geometries when it is kappa3-(P,N,P) coordinated, depending on the steric demand at the uranium metal center. Additionally, its hemilabile character was demonstrated with an unusual kappa2-(P,N) coordination mode that is maintained in both the solid-state and in solution. Comparison of the structures of the mono(PNP) and bis(PNP) complexes 7, 9, 11-13 with their respective C5Me5 analogues 1-4 undoubtedly show that a more sterically congested environment is provided by the PNP ligand. The

  9. Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

    International Nuclear Information System (INIS)

    Zheng Yuzhan; Lu Wu; Ren Diyuan; Wang Yiyuan; Wang Zhikuan; Yang Yonghui

    2010-01-01

    The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail. (semiconductor integrated circuits)

  10. Implemented Crime Prevention Strategies of PNP in Salug Valley, Zamboanga Del Sur, Philippines

    Directory of Open Access Journals (Sweden)

    Mark E. Patalinghug

    2017-05-01

    Full Text Available This study aimed primarily to determine the effectiveness of crime prevention strategies implemented by the Salug Valley Philippine National Police (PNP in terms of Police Integrated Patrol System, Barangay Peacekeeping Operation, Anti - Criminality Operation, Integrated Area Community Public Safety services, Bantay Turista and Scho ol Safety Project as evaluated by 120 inhabitants and 138 PNP officers from four Municipalities of Salug Valley Zamboanga del Sur. Stratified random sampling was utilized in determining the respondents. Index crime rate were correlated with the crime preve ntion strategies of the PNP in town of Salug Valley. A descriptive method of research was applied in this study utilizing self - made questionnaire. The data collected were analyzed using the main statistical tools like frequency count, percentage, mean com putation, Kruskal Wallis Analysis of Variance and simple correlation. Findings of the study revealed that the crime prevention strategies in four (4 municipalities were “much effective” to include Integrated Patrol System, Barangay Peace Keeping Operation s, Anti - Criminality Operations, Integrated Area Community Public Safety Services, Bantay Turista and School Safety Project in connection to the responses of 158 participants. There is a significant relationship between crime prevention strategies employed and index crime rate.

  11. Conversion Matrix Analysis of SiGe HBT Gilbert Cell Mixers

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

    2004-01-01

    The frequency response of SiGe HBT active mixers based on the Gilbert cell topology is analyzed theoretically. The time-varying operation of the Gilbert cell mixer is taken into account by applying conversion matrix analysis. The main bandwidth limiting mechanisms experienced in SiGe HBT Gilbert ...

  12. Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

    KAUST Repository

    Zhang, Bo

    2018-04-14

    The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

  13. Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

    International Nuclear Information System (INIS)

    Yamamoto, Yuji; Heinemann, Bernd; Murota, Junichi; Tillack, Bernd

    2014-01-01

    Phosphorus (P) atomic layer doping in SiGe is investigated at temperatures between 100 °C to 600 °C using a single wafer reduced pressure chemical vapor deposition system. SiGe(100) surface is exposed to PH 3 at different PH 3 partial pressures by interrupting SiGe growth. The impact of the SiGe buffer/cap growth condition (total pressure/SiGe deposition precursors) on P adsorption, incorporation, and segregation are investigated. In the case of SiH 4 -GeH 4 -H 2 gas system, steeper P spikes due to lower segregation are observed by SiGe cap deposition at atmospheric (ATM) pressure compared with reduced pressure (RP). The steepness of P spike of ∼ 5.7 nm/dec is obtained for ATM pressure without reducing deposition temperature. This result may be due to the shift of equilibrium of P adsorption/desorption to desorption direction by higher H 2 pressure. Using Si 2 H 6 -GeH 4 -H 2 gas system for SiGe cap deposition in RP, lowering the SiGe growth temperature is possible, resulting in higher P incorporation and steeper P profile due to reduced desorption and segregation. In the case of Si 2 H 6 -GeH 4 -H 2 gas system, the P dose could be simulated assuming a Langmuir-type kinetics model. Incorporated P shows high electrical activity, indicating P is adsorbed mostly in lattice position. - Highlights: • Phosphorus (P) atomic layer doping in SiGe (100) is investigated using CVD. • P adsorption is suppressed by the hydrogen termination of Ge surface. • By SiGe cap deposition at atmospheric pressure, P segregation was suppressed. • By using Si 2 H 6 -based SiGe cap, P segregation was also suppressed. • The P adsorption process is self-limited and follows Langmuir-type kinetics model

  14. Investigating ESD sensitivity in electrostatic SiGe MEMS

    International Nuclear Information System (INIS)

    Sangameswaran, Sandeep; De Coster, Jeroen; Linten, Dimitri; Scholz, Mirko; Thijs, Steven; Groeseneken, Guido; De Wolf, Ingrid

    2010-01-01

    The sensitivity of electrostatically actuated SiGe microelectromechanical systems to electrostatic discharge events has been investigated in this paper. Torsional micromirrors and RF microelectromechanical systems (MEMS) actuators have been used as two case studies to perform this study. On-wafer electrostatic discharge (ESD) measurement methods, such as the human body model (HBM) and machine model (MM), are discussed. The impact of HBM ESD zap tests on the functionality and behavior of MEMS is explained and the ESD failure levels of MEMS have been verified by failure analysis. It is demonstrated that electrostatic MEMS devices have a high sensitivity to ESD and that it is essential to protect them.

  15. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  16. AS3MT, GSTO, and PNP polymorphisms: impact on arsenic methylation and implications for disease susceptibility.

    Science.gov (United States)

    Antonelli, Ray; Shao, Kan; Thomas, David J; Sams, Reeder; Cowden, John

    2014-07-01

    Oral exposure to inorganic arsenic (iAs) is associated with adverse health effects. Epidemiological studies suggest differences in susceptibility to these health effects, possibly due to genotypic variation. Genetic polymorphisms in iAs metabolism could lead to increased susceptibility by altering urinary iAs metabolite concentrations. To examine the impact of genotypic polymorphisms on iAs metabolism. We screened 360 publications from PubMed and Web of Science for data on urinary mono- and dimethylated arsenic (MMA and DMA) percentages and polymorphic genes encoding proteins that are hypothesized to play roles in arsenic metabolism. The genes we examined were arsenic (+3) methyltransferase (AS3MT), glutathione-s-transferase omega (GSTO), and purine nucleoside phosphorylase (PNP). Relevant data were pooled to determine which polymorphisms are associated across studies with changes in urinary metabolite concentration. In our review, AS3MT polymorphisms rs3740390, rs11191439, and rs11191453 were associated with statistically significant changes in percent urinary MMA. Studies of GSTO polymorphisms did not indicate statistically significant associations with methylation, and there are insufficient data on PNP polymorphisms to evaluate their impact on metabolism. Collectively, these data support the hypothesis that AS3MT polymorphisms alter in vivo metabolite concentrations. Preliminary evidence suggests that AS3MT genetic polymorphisms may impact disease susceptibility. GSTO polymorphisms were not associated with iAs-associated health outcomes. Additional data are needed to evaluate the association between PNP polymorphisms and iAs-associated health outcomes. Delineation of these relationships may inform iAs mode(s) of action and the approach for evaluating low-dose health effects for iAs. Genotype impacts urinary iAs metabolite concentrations and may be a potential mechanism for iAs-related disease susceptibility. Published by Elsevier Inc.

  17. The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors

    Energy Technology Data Exchange (ETDEWEB)

    CHANG,PING-CHIH; LI,N.Y.; BACA,ALBERT G.; MONIER,C.; LAROCHE,J.R.; HOU,H.Q.; REN,F.; PEARTON,S.J.

    2000-08-01

    The authors have demonstrated an aluminum-free P-n-P GaAs/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (V{sub ON}) that is 0.27 V lower than in a comparable P-n-p AlGaAs/GaAs HBT. The device shows near-ideal D. C. characteristics with a current gain ({beta}) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AlGaAs/GaAs HBT, with f{sub T} and f{sub MAX} values of 12 GHz and 10 GHz, respectively. This device is very suitable for low-power complementary HBT circuit applications, while the aluminum-free emitter structure eliminates issues typically associated with AlGaAs.

  18. Singlet-to-triplet ratio in the deuteron breakup reaction pd → pnp at 585 MeV

    International Nuclear Information System (INIS)

    Uzikov, Yu.N.; Komarov, V.I.; Rathmann, F.; Seyfarth, H.

    2001-01-01

    Available experimental data on the exclusive pd → pnp reaction at 585 MeV show a narrow peak in the proton-neutron final-state interaction region. It was supposed previously, on the basis of a phenomenological analysis of the shape of this peak, that the final spin-singlet pn state provided about one third of the observed cross section. By comparing the absolute value of the measured cross section with that of pd elastic scattering using the Faeldt-Wilkin extrapolation theorem, it is shown here that the pd → pnp data can be explained mainly by the spin-triplet final state with a singlet admixture of a few percent. The smallness of the singlet contribution is compatible with existing pN → pNπ data and the one-pion exchange mechanism of the pd → pnp reaction

  19. Templated self-assembly of SiGe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dais, Christian

    2009-08-19

    This PhD thesis reports on the fabrication and characterization of exact aligned SiGe quantum dot structures. In general, SiGe quantum dots which nucleate via the Stranski-Krastanov growth mode exhibit broad size dispersion and nucleate randomly on the surface. However, to tap the full potential of SiGe quantum dots it is necessary to control the positioning and size of the dots on a nanometer length, e.g. for electronically addressing of individual dots. This can be realized by so-called templated self-assembly, which combines top-down lithography with bottom-up selfassembly. In this process the lithographically defined pits serve as pre-defined nucleation points for the epitaxially grown quantum dots. In this thesis, extreme ultraviolet interference lithography at a wavelength of e=13.4 nm is employed for prepatterning of the Si substrates. This technique allows the precise and fast fabrication of high-resolution templates with a high degree of reproducibility. The subsequent epitaxial deposition is either performed by molecular beam epitaxy or low-pressure chemical vapour deposition. It is shown that the dot nucleation on pre-patterned substrates depends strongly on the lithography parameters, e.g. size and periodicity of the pits, as well as on the epitaxy parameters, e.g. growth temperature or material coverage. The interrelations are carefully analyzed by means of scanning force microscopy, transmission electron microscopy and X-ray diffraction measurements. Provided that correct template and overgrowth parameters are chosen, perfectly aligned and uniform SiGe quantum dot arrays of different period, size as well as symmetry are created. In particular, the quantum dot arrays with the so far smallest period (35 nm) and smallest size dispersion are fabricated in this thesis. Furthermore, the strain fields of the underlying quantum dots allow the fabrication of vertically aligned quantum dot stacks. Combining lateral and vertical dot alignment results in three

  20. Crystal structures of carbamate kinase from Giardia lamblia bound with citric acid and AMP-PNP.

    Directory of Open Access Journals (Sweden)

    Kap Lim

    Full Text Available The parasite Giardia lamblia utilizes the L-arginine dihydrolase pathway to generate ATP from L-arginine. Carbamate kinase (CK catalyzes the last step in this pathway, converting ADP and carbamoyl phosphate to ATP and ammonium carbamate. Because the L-arginine pathway is essential for G. lamblia survival and absent in high eukaryotes including humans, the enzyme is a potential target for drug development. We have determined two crystal structures of G. lamblia CK (glCK with bound ligands. One structure, in complex with a nonhydrolyzable ATP analog, adenosine 5'-adenylyl-β,γ-imidodiphosphate (AMP-PNP, was determined at 2.6 Å resolution. The second structure, in complex with citric acid bound in the postulated carbamoyl phosphate binding site, was determined in two slightly different states at 2.1 and 2.4 Å resolution. These structures reveal conformational flexibility of an auxiliary domain (amino acid residues 123-170, which exhibits open or closed conformations or structural disorder, depending on the bound ligand. The structures also reveal a smaller conformational change in a region associated the AMP-PNP adenine binding site. The protein residues involved in binding, together with a model of the transition state, suggest that catalysis follows an in-line, predominantly dissociative, phosphotransfer reaction mechanism, and that closure of the flexible auxiliary domain is required to protect the transition state from bulk solvent.

  1. The Arabidopsis thaliana natriuretic peptide AtPNP-A is a systemic regulator of leaf dark respiration and signals via the phloem

    KAUST Repository

    Ruzvidzo, Oziniel; Donaldson, Lara Elizabeth; Valentine, Alex J.; Gehring, Christoph A

    2011-01-01

    -molar concentrations. Here we show that a recombinant Arabidopsis thaliana PNP (AtPNP-A) rapidly increased the rate of dark respiration in treated leaves after 5 min. In addition, we observed increases in lower leaves, and with a lag time of 10 min, the effect spread

  2. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

    Science.gov (United States)

    Rahim, Alhan Farhanah Abd; Zainal Badri, Nur'Amirah; Radzali, Rosfariza; Mahmood, Ainorkhilah

    2017-11-01

    In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

  3. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

    Directory of Open Access Journals (Sweden)

    Abd Rahim Alhan Farhanah

    2017-01-01

    Full Text Available In this paper, an investigation of design and simulation of silicon germanium (SiGe islands on silicon (Si was presented for potential visible metal semiconductor metal (MSM photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD tools. The different structures of the silicon germanium (SiGe island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM photodetector was evaluated by photo and dark current-voltage (I-V characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

  4. Technique of forecasting the working capacity of horizontal p-n-p transistor for a given radiation level; Metodika prognozirovaniya rabotosposobnosti gorizontal`nogo p-n-p tranzistora na zadannyj uroven` izlucheniya

    Energy Technology Data Exchange (ETDEWEB)

    Pershenkov, V S; Sevast` yanov, A V

    1994-12-31

    Methods of forecasting the degradation of horizontal p-n-p transistors under the effect of ionizing radiation based on the principles of invariant topological approach are presented. Results are presented and analysis of experimental investigations into the real test structures performed in the same process cycle as the integral circuit under development is given.

  5. Quantitative SIMS analysis of SiGe composition with low energy O2+ beams

    International Nuclear Information System (INIS)

    Jiang, Z.X.; Kim, K.; Lerma, J.; Corbett, A.; Sieloff, D.; Kottke, M.; Gregory, R.; Schauer, S.

    2006-01-01

    This work explored quantitative analyses of SiGe films on either Si bulk or SOI wafers with low energy SIMS by assuming a constant ratio between the secondary ion yields of Si + and Ge + inside SiGe films. SiGe samples with Ge contents ranging from 15 to 65% have been analyzed with a 1 keV O 2 + beam at normal incidence. For comparison, the samples were also analyzed with RBS and/or AES. The Ge content as measured with SIMS, based on a single SiGe/Si or SiGe/SOI standard, exhibited good agreement with the corresponding RBS and AES data. It was concluded that SIMS was capable of providing accurate characterization of the SiGe composition with the Ge content up to 65%

  6. Purine Nucleoside Phosphorylase (PNP) Activity of Lymphocytes and T Cell Subsets in Peripheral Blood in Thyroid Tumors

    International Nuclear Information System (INIS)

    Kim, Dong Soo

    1992-01-01

    To elucidate alteration of purine nucleoside phosphorylase (PNP) activity of peripheral lymphocytes and helper/inducer and suppressor/cytototxic T cells in patients with thyroid tumors, the author examined PNP activity, and CD4 + and CD8 + cells of peripheral blood in 20 cases of simple goiter, 9 cases of thyroid adenoma and 20 cases of thyroid cancer as well as 11 cases of adult healthy subjects as control. Diagnoses were established on the basis of commonly accepted clinical and biochemical criteria in simple goiter and were confirmed histopathologically in thyroid adenoma and cancer. All blood was obtained from veins of the patients and control subjects in Pusan National University Hospital during the period of January to August, 1991. The results obtained were summarized as follows: 1) The PNP activity was significantly decreased or tended to be decreased in thyroid adenomas and cancers as compared with control subjects and simple goiters. 2) The percentage of CD8 cells was significantly decreased or tended to be decreased in thyroid cancers as compared with simple goiters, thyroid adenomas and control subjects. 3) The CD4/CD8 ratio was significantly increased or tended to be increased in thyroid cancer as compared with simple goiters, thyroid adenomas and control subjects. On the basis of the results, it can be suggested that the immunodysfunction in thyroid cancer may be due to decreased suppressor/cytotoxic T cells, and the estimation of PNP activity of peripheral lymphocyte is a helpful test in detecting the immune status in thyroid tumors.

  7. Ionizing/displacement synergistic effects induced by gamma and neutron irradiation in gate-controlled lateral PNP bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chenhui, E-mail: wangchenhui@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10, Xi’an 710024 (China); Chen, Wei; Yao, Zhibin; Jin, Xiaoming; Liu, Yan; Yang, Shanchao [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10, Xi’an 710024 (China); Wang, Zhikuan [State Key Laboratory of Analog Integrated Circuit, Chongqing 400060 (China)

    2016-09-21

    A kind of gate-controlled lateral PNP bipolar transistor has been specially designed to do experimental validations and studies on the ionizing/displacement synergistic effects in the lateral PNP bipolar transistor. The individual and mixed irradiation experiments of gamma rays and neutrons are accomplished on the transistors. The common emitter current gain, gate sweep characteristics and sub-threshold sweep characteristics are measured after each exposure. The results indicate that under the sequential irradiation of gamma rays and neutrons, the response of the gate-controlled lateral PNP bipolar transistor does exhibit ionizing/displacement synergistic effects and base current degradation is more severe than the simple artificial sum of those under the individual gamma and neutron irradiation. Enough attention should be paid to this phenomenon in radiation damage evaluation. - Highlights: • A kind of gate-controlled lateral PNP bipolar transistor has been specially designed to facilitate the analysis of ionizing/displacement synergistic effects induced by the mixed irradiation of gamma and neutron. • The difference between ionizing/displacement synergistic effects and the simple sum of TID and displacement effects is analyzed. • The physical mechanisms of synergistic effects are explained.

  8. Investigations on accidents with massive water ingress exemplified by the pebble bed reactor PNP-500

    International Nuclear Information System (INIS)

    Moormann, R.

    1986-01-01

    A computer code is used for analyses of massive water ingress accidents in the High-Temperature Gas Cooled Reactor concept PNP-500 with pebble bed core. The analyses are mainly focussed on graphite corrosion processes. For the investigated accidents a correct reactor shut down in assumed. The mass of water ingressing into the primary circuit is varied between 1000 and 7500 kg (i.e., up to hypothetical values). The dependence of accident consequences on parameters such as intensity and starting time of the afterheat removal system or kinetic values of the chemical processes is examined. The results show that even under pessimistic assumptions the extent of the graphite corrosion is relatively low; significant damaging of fuel elements or graphite components does not occur. A primary circuit depressurization, combined with local burning of water gas, would probably not affect the fission product retention potential of the (gastight) containment. Summing up, the risk caused by these accidents remains small. (orig.) [de

  9. Final state interaction in the pd → pnp reaction at 1 GeV

    International Nuclear Information System (INIS)

    Deloff, A.

    1992-09-01

    The pd → pnp reaction at 1 GeV in both the direct and charge exchange channel has been investigated. The experimental data come from a line reversed beam-target experiment with 3.3 GeV/c deuterons incident on a proton target. In the direct channel data exhibit narrow structures in the np effective mass spectra: at threshold, at 2.02 GeV and at 2.12 GeV which have been seen before and we report on a new narrow enhancement at 1.95 GeV. In charge exchange channel the data show somewhat broader peak at 2.18 GeV. The data are explained by using a conventional approach, i.e. without sub-nucleonic degrees of freedom, but including the ΔN channel in NN scattering. 29 figs., 1 tab., 36 refs. (author)

  10. Ultra-low Thermal Conductivity in Si/Ge Hierarchical Superlattice Nanowire.

    Science.gov (United States)

    Mu, Xin; Wang, Lili; Yang, Xueming; Zhang, Pu; To, Albert C; Luo, Tengfei

    2015-11-16

    Due to interfacial phonon scattering and nanoscale size effect, silicon/germanium (Si/Ge) superlattice nanowire (SNW) can have very low thermal conductivity, which is very attractive for thermoelectrics. In this paper, we demonstrate using molecular dynamics simulations that the already low thermal conductivity of Si/Ge SNW can be further reduced by introducing hierarchical structure to form Si/Ge hierarchical superlattice nanowire (H-SNW). The structural hierarchy introduces defects to disrupt the periodicity of regular SNW and scatters coherent phonons, which are the key contributors to thermal transport in regular SNW. Our simulation results show that periodically arranged defects in Si/Ge H-SNW lead to a ~38% reduction of the already low thermal conductivity of regular Si/Ge SNW. By randomizing the arrangement of defects and imposing additional surface complexities to enhance phonon scattering, further reduction in thermal conductivity can be achieved. Compared to pure Si nanowire, the thermal conductivity reduction of Si/Ge H-SNW can be as large as ~95%. It is concluded that the hierarchical structuring is an effective way of reducing thermal conductivity significantly in SNW, which can be a promising path for improving the efficiency of Si/Ge-based SNW thermoelectrics.

  11. Catalytic mechanisms of direct pyrrole synthesis via dehydrogenative coupling mediated by PNP-Ir or PNN-Ru pincer complexes: Crucial role of proton-transfer shuttles in the PNP-Ir system

    KAUST Repository

    Qu, Shuanglin

    2014-04-02

    Kempe et al. and Milstein et al. have recently advanced the dehydrogenative coupling methodology to synthesize pyrroles from secondary alcohols (e.g., 3) and β-amino alcohols (e.g., 4), using PNP-Ir (1) and PNN-Ru (2) pincer complexes, respectively. We herein present a DFT study to characterize the catalytic mechanism of these reactions. After precatalyst activation to give active 1A/2A, the transformation proceeds via four stages: 1A/2A-catalyzed alcohol (3) dehydrogenation to give ketone (11), base-facilitated C-N coupling of 11 and 4 to form an imine-alcohol intermediate (18), base-promoted cyclization of 18, and catalyst regeneration via H2 release from 1R/2R. For alcohol dehydrogenations, the bifunctional double hydrogen-transfer pathway is more favorable than that via β-hydride elimination. Generally, proton-transfer (H-transfer) shuttles facilitate various H-transfer processes in both systems. Notwithstanding, H-transfer shuttles play a much more crucial role in the PNP-Ir system than in the PNN-Ru system. Without H-transfer shuttles, the key barriers up to 45.9 kcal/mol in PNP-Ir system are too high to be accessible, while the corresponding barriers (<32.0 kcal/mol) in PNN-Ru system are not unreachable. Another significant difference between the two systems is that the addition of alcohol to 1A giving an alkoxo complex is endergonic by 8.1 kcal/mol, whereas the addition to 2A is exergonic by 8.9 kcal/mol. The thermodynamic difference could be the main reason for PNP-Ir system requiring lower catalyst loading than the PNN-Ru system. We discuss how the differences are resulted in terms of electronic and geometric structures of the catalysts and how to use the features in catalyst development. © 2014 American Chemical Society.

  12. Si/Ge intermixing during Ge Stranski–Krastanov growth

    Directory of Open Access Journals (Sweden)

    Alain Portavoce

    2014-12-01

    Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.

  13. 4pnp J=0e-2e autoionizing series of calcium: experimental and theoretical analysis

    International Nuclear Information System (INIS)

    Bolovinos, A.; Luc-Koenig, E.; Assimopoulos, S.; Lyras, A.; Karapanagioti, N.E.; Crete Univ., Iraklion; Charalambidis, D.; Crete Univ., Iraklion; Aymar, M.

    1996-01-01

    The even parity 4pnp J=0, 1, 2 doubly excited autoionizing states of neutral calcium in an atomic beam are investigated by a two-step isolated core excitation (ICE) method using two different combinations of polarization of the laser beams. The different excited energy levels are assigned to nine autoionizing Rydberg series 4p 1/2,3/2 np J=0, 1, 2 for 8≤n≤22. The theoretical interpretation is achieved by a combination of the eigenchannel R-matrix theory and the multichannel quantum defect (MQDT) method. Two, five and six closed interacting channels are introduced for the J=0, J=1 and J=2 series respectively. Theoretical energy level positions, autoionization widths and excitation profiles are compared with the experimental data, confirming the identification of the observed structures and providing evidence of extended mixing between the 4p 1/2 np and 4p 3/2 np series. (orig.). With 9 figs., 3 tabs

  14. Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure.

    Science.gov (United States)

    Huang, Zhong-Mei; Huang, Wei-Qi; Dong, Tai-Ge; Wang, Gang; Wu, Xue-Ke

    2016-12-01

    It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI.

  15. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    International Nuclear Information System (INIS)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel; Mondiali, Valeria; Isella, Giovanni; Bollani, Monica

    2014-01-01

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

  16. Heteroepitaxial Growth of Vacuum-Evaporated Si-Ge Films on Nano structured Silicon Substrates

    International Nuclear Information System (INIS)

    Ayu Wazira Azhari; Ayu Wazira Azhari; Kamaruzzaman Sopian; Saleem Hussain Zaidi

    2015-01-01

    In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: for example polished Si, Si micro pyramids and Si nano pillars profiles. A simple metal-assisted chemical etching method is used to fabricate the Si nano pillars, with Ag acting as a catalyst. Following deposition, substrates are subjected to post-deposition thermal annealing at 1000 degree Celsius to improve the crystallinity of the Ge layer. Optical and morphological studies of surface area are conducted using field emission scanning electron microscopy (FE-SEM), Energy Dispersive X-ray (EDX), Raman spectroscopy and infrared spectroscopy. From the infrared spectroscopy analysis, the energy bandgap for Si-Ge films is estimated to be around 0.94 eV. This high-quality Si-Ge film is most favourable for optics, optoelectronics and high-efficiency solar cell applications. (author)

  17. Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Weifeng; He, Yan; Ouyang, Gang, E-mail: gangouy@hunnu.edu.cn [Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications(SICQEA), Hunan Normal University, Changsha 410081 (China); Sun, Changqing [School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2016-01-15

    The thermal conductivity of Si/Ge core-shell nanowires (CSNWs) is investigated on the basis of atomic-bond-relaxation consideration and continuum mechanics. An analytical model is developed to clarify the interface bond relaxation of Si/Ge CSNWs. It is found that the thermal conductivity of Si core can be modulated through covering with Ge epitaxial layers. The change of thermal conductivity in Si/Ge CSNWs should be attributed to the surface relaxation and interface mismatch between inner Si nanowire and outer Ge epitaxial layer. Our results are in well agreement with the experimental measurements and simulations, suggesting that the presented method provides a fundamental insight of the thermal conductivity of CSNWs from the atomistic origin.

  18. Transformation of point defects under annealing of neutron-irradiated Si and Si:Ge

    International Nuclear Information System (INIS)

    Pomozov, Yu.V.; Khirunenko, L.I.; Shakhovtsev, V.I.; Yashnik, V.I.

    1990-01-01

    Transformation of point radiation defects under isochronous annealing of neurton-irradaited Si and Si:Ge is studied. It is determined, that occurence of several new centers which produce A-centre range absorption bands is observed at annealing within 423-493 K temperature range. It is shown that vacancy and oxygen are included in the centers composition. It is found that VO centre transformation into VO 2 at annealing occurs via intermediate stage in contrast to that occuring in electron-irradiated crystals via VO direct diffusion to interstitial oxygen. Transformation of centers under Si ansd Si:Ge annealing occurs similarly

  19. Total dose hardness of a commercial SiGe BiCMOS technology

    International Nuclear Information System (INIS)

    Van Vonno, N.; Lucas, R.; Thornberry, D.

    1999-01-01

    Over the past decade SiGe HBT technology has progress from the laboratory to actual commercial applications. When integrated into a BiMOS process, this technology has applications in low-cost space systems. In this paper, we report results of total dose testing of a SiGe/CMOS process accessible through a commercial foundry. (authors)

  20. An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.

    2017-01-01

    In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can...

  1. SiGe Based Low Temperature Electronics for Lunar Surface Applications

    Science.gov (United States)

    Mojarradi, Mohammad M.; Kolawa, Elizabeth; Blalock, Benjamin; Cressler, John

    2012-01-01

    The temperature at the permanently shadowed regions of the moon's surface is approximately -240 C. Other areas of the lunar surface experience temperatures that vary between 120 C and -180 C during the day and night respectively. To protect against the large temperature variations of the moon surface, traditional electronics used in lunar robotics systems are placed inside a thermally controlled housing which is bulky, consumes power and adds complexity to the integration and test. SiGe Based electronics have the capability to operate over wide temperature range like that of the lunar surface. Deploying low temperature SiGe electronics in a lander platform can minimize the need for the central thermal protection system and enable the development of a new generation of landers and mobility platforms with highly efficient distributed architecture. For the past five years a team consisting of NASA, university and industry researchers has been examining the low temperature and wide temperature characteristic of SiGe based transistors for developing electronics for wide temperature needs of NASA environments such as the Moon, Titan, Mars and Europa. This presentation reports on the status of the development of wide temperature SiGe based electronics for the landers and lunar surface mobility systems.

  2. SiGe Integrated Circuit Developments for SQUID/TES Readout

    Science.gov (United States)

    Prêle, D.; Voisin, F.; Beillimaz, C.; Chen, S.; Piat, M.; Goldwurm, A.; Laurent, P.

    2018-03-01

    SiGe integrated circuits dedicated to the readout of superconducting bolometer arrays for astrophysics have been developed since more than 10 years at APC. Whether for Cosmic Microwave Background (CMB) observations with the QUBIC ground-based experiment (Aumont et al. in astro-ph.IM, 2016. arXiv:1609.04372) or for the Hot and Energetic Universe science theme with the X-IFU instrument on-board of the ATHENA space mission (Barret et al. in SPIE 9905, space telescopes & instrumentation 2016: UV to γ Ray, 2016. https://doi.org/10.1117/12.2232432), several kinds of Transition Edge Sensor (TES) (Irwin and Hilton, in ENSS (ed) Cryogenic particle detection, Springer, Berlin, 2005) arrays have been investigated. To readout such superconducting detector arrays, we use time or frequency domain multiplexers (TDM, FDM) (Prêle in JINST 10:C08015, 2016. https://doi.org/10.1088/1748-0221/10/08/C08015) with Superconducting QUantum Interference Devices (SQUID). In addition to the SQUID devices, low-noise biasing and amplification are needed. These last functions can be obtained by using BiCMOS SiGe technology in an Application Specific Integrated Circuit (ASIC). ASIC technology allows integration of highly optimised circuits specifically designed for a unique application. Moreover, we could reach very low-noise and wide band amplification using SiGe bipolar transistor either at room or cryogenic temperatures (Cressler in J Phys IV 04(C6):C6-101, 1994. https://doi.org/10.1051/jp4:1994616). This paper discusses the use of SiGe integrated circuits for SQUID/TES readout and gives an update of the last developments dedicated to the QUBIC telescope and to the X-IFU instrument. Both ASIC called SQmux128 and AwaXe are described showing the interest of such SiGe technology for SQUID multiplexer controls.

  3. Electronic structure of O-doped SiGe calculated by DFT + U method

    Science.gov (United States)

    Zhao, Zong-Yan; Yang, Wen; Yang, Pei-Zhi

    2016-12-01

    To more in depth understand the doping effects of oxygen on SiGe alloys, both the micro-structure and properties of O-doped SiGe (including: bulk, (001) surface, and (110) surface) are calculated by DFT + U method in the present work. The calculated results are as follows. (i) The (110) surface is the main exposing surface of SiGe, in which O impurity prefers to occupy the surface vacancy sites. (ii) For O interstitial doping on SiGe (110) surface, the existences of energy states caused by O doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers. (iii) The finding about decreased surface work function of O-doped SiGe (110) surface can confirm previous experimental observations. (iv) In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-SiGe-based solar cells in the future. Project supported by the Natural Science Foundation of Yunnan Province, China (Grant No. 2015FB123), the 18th Yunnan Province Young Academic and Technical Leaders Reserve Talent Project, China (Grant No. 2015HB015), and the National Natural Science Foundation of China (Grant No. U1037604).

  4. Relationships between acute toxicities of para nitrophenol (p-NP) and nitrobenzene (NB) to Daphnia magna and Photobacterium phosphoreum: Physicochemical properties and metabolites under anaerobic/aerobic sequentials

    Energy Technology Data Exchange (ETDEWEB)

    Sponza, Delia Teresa, E-mail: delya.sponza@deu.edu.tr [Dokuz Eyluel University, Engineering Faculty, Environmental Engineering Department, Buca Kaynaklar Campus, Buca, Izmir (Turkey); Kuscu, Ozlem Selcuk [Department of Environmental Engineering, Engineering and Architecture Faculty, Sueleyman Demirel University, Cuenuer Campus, 32260 Isparta (Turkey)

    2011-01-30

    In this study, the acute toxicities of nitrobenzene (NB) and para nitrophenol (p-NP) were investigated in a high rate sequential anaerobic migrating blanket (AMBR)/aerobic completely stirred tank reactor (CSTR) using Microtox and Daphnia magna tests. After sequential anaerobic and aerobic treatments, the inhibitions in the Microtox bacteria decreased from an initial 78.10-48.20% and 4.00%, respectively, in wastewater containing 40.00 mg/L p-NP. The inhibitions of the influent wastewater containing 60.00 mg/L NB decreased from 72.10% to 45.30% and to 4.00% after anaerobic and aerobic treatment, respectively. The acute toxicity removals were 94% and 93% in the effluent of the whole sequential system, for p-NP and NB, respectively. The acute toxicity in the influent was dependent on the parent NB and p-NP concentrations and ons their physicochemical properties such as hydrophobicity, octanol/water partition coefficient and vapour density for both Microtox bacteria and Daphnia magna while the toxicity in the effluent of the anaerobic reactor was strongly dependent on the metabolites of p-NP (p-amino phenol, phenol, NH{sub 4}-N) and NB (aniline) for Microtox test. This effluent was not toxic to Daphnia magna.

  5. Relationships between acute toxicities of para nitrophenol (p-NP) and nitrobenzene (NB) to Daphnia magna and Photobacterium phosphoreum: Physicochemical properties and metabolites under anaerobic/aerobic sequentials

    International Nuclear Information System (INIS)

    Sponza, Delia Teresa; Kuscu, Ozlem Selcuk

    2011-01-01

    In this study, the acute toxicities of nitrobenzene (NB) and para nitrophenol (p-NP) were investigated in a high rate sequential anaerobic migrating blanket (AMBR)/aerobic completely stirred tank reactor (CSTR) using Microtox and Daphnia magna tests. After sequential anaerobic and aerobic treatments, the inhibitions in the Microtox bacteria decreased from an initial 78.10-48.20% and 4.00%, respectively, in wastewater containing 40.00 mg/L p-NP. The inhibitions of the influent wastewater containing 60.00 mg/L NB decreased from 72.10% to 45.30% and to 4.00% after anaerobic and aerobic treatment, respectively. The acute toxicity removals were 94% and 93% in the effluent of the whole sequential system, for p-NP and NB, respectively. The acute toxicity in the influent was dependent on the parent NB and p-NP concentrations and ons their physicochemical properties such as hydrophobicity, octanol/water partition coefficient and vapour density for both Microtox bacteria and Daphnia magna while the toxicity in the effluent of the anaerobic reactor was strongly dependent on the metabolites of p-NP (p-amino phenol, phenol, NH 4 -N) and NB (aniline) for Microtox test. This effluent was not toxic to Daphnia magna.

  6. Bi surfactant mediated growth for fabrication of Si/Ge nanostructures and investigation of Si/Ge intermixing by STM

    Energy Technology Data Exchange (ETDEWEB)

    Paul, N.

    2007-10-26

    In the thesis work presented here, we show that Bi is more promising surfactant material than Sb. We demonstrate that by using Bi as a terminating layer on Ge/Si surface, it is possible to distinguish between Si and Ge in Scanning tunnelling microscope (STM). Any attempt to utilize surfactant mediated growth must be preceded by a thorough study of its effect on the the system being investigated. Thus, the third chapter of this thesis deals with an extensive study of the Bi surfactant mediated growth of Ge on Si(111) surface as a function of Ge coverage. The growth is investigated from the single bilayer Ge coverage till the Ge coverage of about 15 BL when the further Ge deposition leads to two-dimensional growth. In the fourth chapter, the unique property of Bi terminating layer on Ge/Si surface to result in an STM height contrast between Si and Ge is explained with possible explanations given for the reason of this apparent height contrast. The controlled fabrication of Ge/Si nanostructures such as nanowires and nanorings is demonstrated. A study on Ge-Si diffusion in the surface layers by a direct method such as STM was impossible previously because of the similar electronic structure of Ge and Si. Since with the Bi terminating surface layer, one is able to distinguish between Ge and Si, the study of intermixing between them is also possible using STM. This method to distinguish between Si and Ge allows one to study intermixing on the nanoscale and to identify the fundamental diffusion processes giving rise to the intermixing. In Chapter 5 we discuss how this could prove useful especially as one could get a local probe over a very narrow Ge-Si interface. A new model is proposed to estimate change in the Ge concentration in the surface layer with time. The values of the activation energies of Ge/Si exchange and Si/Ge exchange are estimated by fitting the experimental data with the model. The Ge/Si intermixing has been studied on a surface having 1 ML Bi ({radical

  7. Performance assessment of the (Th,U)O2 HTI-Biso coated particle under PNP/HHT irradiation conditions

    International Nuclear Information System (INIS)

    Kania, M.J.; Nickel, H.

    1980-11-01

    The HTI Biso Particle, Variant-I: consisting of a dense 400 μm-diameter (Th,U)O 2 -kernel with a Biso coating using a methane derived pyrocarbon layer (HTI), is a candidate fuel for the advanced PNP/HHT High Temperature Reactor systems. This report presents the results of a comprehensive performance assessment of Variant-I represented by six relevant particle batches irradiated in 12 accelerated irradiation experiments. Fuel performance was judged based upon PNP/HHT qualification requirements with regard to in-reactor operating conditions and end-of-life (EOL) coated particle failure fraction. Fuel operating conditions in each irradiation experiment were obtained from two sources: 1) a thorough review of all available irradiation data on each experiment; and 2) a two-dimensional (R,theta) thermal modeling computer code, R2KTMP, was developed to calculate fuel operating temperature distributions within spherical elements. End-of-life particle failure fractions were determined from: gaseous fission product release, based on in-reactor R/B measurements and postirradiation annealing and room temperature investigations; solid fission product release, from single particle 137 Cs release into fuel element matrix and hot-gaseous chlorine leaching; and visual and ceramographic examinations. Failure fractions determined by solid fission product release yielded values 2-35 times higher than those determined by gaseous fission product release. (orig.) [de

  8. Enhanced low dose rate sensitivity (ELDRS) in a voltage comparator which only utilizes complementary vertical NPN and PNP transistors

    International Nuclear Information System (INIS)

    Krieg, J.F.; Titus, J.L.; Emily, D.; Gehlhausen, M.; Swonger, J.; Platteter, D.

    1999-01-01

    For the first time, enhanced low dose rate sensitivity (ELDRS) is reported in a vertical bipolar process. A radiation hardness assurance (RHA) test method was successfully demonstrated on a linear circuit, the HS139RH quad comparator, and its discrete transistor elements. This circuit only uses vertical NPN and PNP transistors. Radiation tests on the HS139RH were performed at 25 C using dose rates of 50 rd(Si)/s, 100 mrd(Si)/s and 10 mrd(Si)/s, and at 100 C using a dose rate of 10 rd(Si)/s. Tests at dose rates of 50 rd(Si)/s at 25 C and 10 rd(Si)/s at 100 C were performed on discrete vertical NPN and PNP transistor elements which comprise the HS139RH. Transistor and circuit responses were evaluated. The die's passivation overcoat layers were varied to examine the effect of removing a nitride layer and thinning a deposited SiO 2 (silox) layer

  9. SigE Is a Chaperone for the Salmonella enterica Serovar Typhimurium Invasion Protein SigD

    OpenAIRE

    Darwin, K. Heran; Robinson, Lloyd S.; Miller, Virginia L.

    2001-01-01

    SigD is translocated into eucaryotic cells by a type III secretion system. In this work, evidence that the putative chaperone SigE directly interacts with SigD is presented. A bacterial two-hybrid system demonstrated that SigE can interact with itself and SigD. In addition, SigD was specifically copurified with SigE-His6 on a nickel column.

  10. Structural, Dynamic, and Vibrational Properties during Heat Transfer in Si/Ge Superlattices: A Car-Parrinello Molecular Dynamics Study

    OpenAIRE

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2016-01-01

    The structural, dynamic, and vibrational properties during the heat transfer process in Si/Ge superlattices, are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) ar...

  11. Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation

    International Nuclear Information System (INIS)

    Cheng Xinli; Chen Zhijun; Wang Yongjin; Jin Bo; Zhang Feng; Zou Shichang

    2005-01-01

    SGOI materials were fabricated by thermal dry oxidation of epitaxial H-ion implanted SiGe layers on SOI wafers. The hydrogen implantation was found to delay the oxidation rate of SiGe layer and to decrease the loss of Ge atoms during oxidation. Further, the H implantation did not degrade the crystallinity of SiGe layer during fabrication of the SGOI

  12. Critical Role of a Single Position in the −35 Element for Promoter Recognition by Mycobacterium tuberculosis SigE and SigH▿

    OpenAIRE

    Song, Taeksun; Song, Seung-Eun; Raman, Sahadevan; Anaya, Mauricio; Husson, Robert N.

    2008-01-01

    Mycobacterial SigE and SigH both initiate transcription from the sigB promoter, suggesting that they recognize similar sequences. Through mutational and primer extension analyses, we determined that SigE and SigH recognize nearly identical promoters, with differences at the 3′ end of the −35 element distinguishing between SigE- and SigH-dependent promoters.

  13. Significant reduction of thermal conductivity in Si/Ge core-shell nanowires.

    Science.gov (United States)

    Hu, Ming; Giapis, Konstantinos P; Goicochea, Javier V; Zhang, Xiaoliang; Poulikakos, Dimos

    2011-02-09

    We report on the effect of germanium (Ge) coatings on the thermal transport properties of silicon (Si) nanowires using nonequilibrium molecular dynamics simulations. Our results show that a simple deposition of a Ge shell of only 1 to 2 unit cells in thickness on a single crystalline Si nanowire can lead to a dramatic 75% decrease in thermal conductivity at room temperature compared to an uncoated Si nanowire. By analyzing the vibrational density states of phonons and the participation ratio of each specific mode, we demonstrate that the reduction in the thermal conductivity of Si/Ge core-shell nanowire stems from the depression and localization of long-wavelength phonon modes at the Si/Ge interface and of high frequency nonpropagating diffusive modes.

  14. Strain-induced formation of fourfold symmetric SiGe quantum dot molecules.

    Science.gov (United States)

    Zinovyev, V A; Dvurechenskii, A V; Kuchinskaya, P A; Armbrister, V A

    2013-12-27

    The strain field distribution at the surface of a multilayer structure with disklike SiGe nanomounds formed by heteroepitaxy is exploited to arrange the symmetric quantum dot molecules typically consisting of four elongated quantum dots ordered along the [010] and [100] directions. The morphological transition from fourfold quantum dot molecules to continuous fortresslike quantum rings with an increasing amount of deposited Ge is revealed. We examine key mechanisms underlying the formation of lateral quantum dot molecules by using scanning tunneling microscopy and numerical calculations of the strain energy distribution on the top of disklike SiGe nanomounds. Experimental data are well described by a simple thermodynamic model based on the accurate evaluation of the strain dependent part of the surface chemical potential. The spatial arrangement of quantum dots inside molecules is attributed to the effect of elastic property anisotropy.

  15. Nitride passivation of the interface between high-k dielectrics and SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093-0411 (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093-0411 (United States); Tang, Kechao; McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Madisetti, Shailesh; Oktyabrsky, Serge [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12222 (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES US, Inc., Albany, New York 12203 (United States); Yoshida, Naomi; Kachian, Jessica; Dong, Lin [Applied Materials, Inc., Santa Clara, California 95054 (United States); Fruhberger, Bernd [California Institute for Telecommunications and Information Technology, University of California San Diego, La Jolla, California 92093-0436 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States)

    2016-01-04

    In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

  16. Effect of Synthesis Procedure on Thermoelectric Property of SiGe Alloy

    Science.gov (United States)

    Li, Jing; Han, Jun; Jiang, Tao; Luo, Lili; Xiang, Yongchun

    2018-05-01

    SiGe thermoelectric material has been synthesized by ball milling combined with hot pressing (HP) or spark plasma sintering (SPS). Effects of ball milling time, powder to ball weight ratio and sintering method on microstructure and thermoelectric properties of SiGe are studied. The results show that longer ball milling time leads to decreased density and worse electrical properties. In the sintering process, SPS results in much larger density and better electrical properties than HP. The Si0.795Ge0.2B0.005 sample prepared by 2 h ball milling combined with SPS obtains a maximum power factor of 3.0 mW m-1 K-2 at 860 K and ZT of 0.95 at 1000 K.

  17. Diffusion of $^{56}$Co in GaAs and SiGe alloys

    CERN Multimedia

    Koskelo, O K

    2007-01-01

    Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of cobalt in GaAs and SiGe alloys under intrinsic conditions. In the literature only three previous studies for Co diffusion in GaAs may be found and the results differ by over four orders of magnitude from each other. For Co diffusion in SiGe alloys no previous data is available in the literature. For Co diffusion in Ge one study may be found but the results have been obtained with material having increased dislocation density. For dislocation-free material no previous measurements are available. For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{56}$Co$^{+}$ ion beam.

  18. Integrated X-band FMCW front-end in SiGe BiCMOS

    NARCIS (Netherlands)

    Suijker, Erwin; de Boer, Lex; Visser, Guido; van Dijk, Raymond; Poschmann, Michael; van Vliet, Frank Edward

    2010-01-01

    An integrated X-band FMCW front-end is reported. The front-end unites the core functionality of an FMCW transmitter and receiver in a 0.25 μm SiGe BiCMOS process. The chip integrates a PLL for the carrier generation, and single-side band and image-reject mixers for up- and down-conversion of the

  19. Step-driven surface segregation and ordering during Si-Ge MBE growth

    International Nuclear Information System (INIS)

    Jesson, D.E.; Pennycook, S.J.; Baribeau, J.M.; Houghton, D.C.

    1992-06-01

    An important role of type S B step edges in determining the as-grown microstructure of Si-Ge superlattices and alloys is implicated from direct Z-contrast images of as-grown structures. A variety of different ordered phase variants can arise at each Si on Ge interface as a result of vertical segregation during superlattice growth. A new monoclinic-ordered structure is predicted to arise as a result of lateral segregation during alloy growth

  20. SiGe derivatization by spontaneous reduction of aryl diazonium salts

    Science.gov (United States)

    Girard, A.; Geneste, F.; Coulon, N.; Cardinaud, C.; Mohammed-Brahim, T.

    2013-10-01

    Germanium semiconductors have interesting properties for FET-based biosensor applications since they possess high surface roughness allowing the immobilization of a high amount of receptors on a small surface area. Since SiGe combined low cost of Si and intrinsic properties of Ge with high mobility carriers, we focused the study on this particularly interesting material. The comparison of the efficiency of a functionalization process involving the spontaneous reduction of diazonium salts is studied on Si(1 0 0), SiGe and Ge semiconductors. XPS analysis of the functionalized surfaces reveals the presence of a covalent grafted layer on all the substrates that was confirmed by AFM. Interestingly, the modified Ge derivatives have still higher surface roughness after derivatization. To support the estimated thickness by XPS, a step measurement of the organic layers is done by AFM or by profilometer technique after a O2 plasma etching of the functionalized layer. This original method is well-adapted to measure the thickness of thin organic films on rough substrates such as germanium. The analyses show a higher chemical grafting on SiGe substrates compared with Si and Ge semiconductors.

  1. 270GHz SiGe BiCMOS manufacturing process platform for mmWave applications

    Science.gov (United States)

    Kar-Roy, Arjun; Preisler, Edward J.; Talor, George; Yan, Zhixin; Booth, Roger; Zheng, Jie; Chaudhry, Samir; Howard, David; Racanelli, Marco

    2011-11-01

    TowerJazz has been offering the high volume commercial SiGe BiCMOS process technology platform, SBC18, for more than a decade. In this paper, we describe the TowerJazz SBC18H3 SiGe BiCMOS process which integrates a production ready 240GHz FT / 270 GHz FMAX SiGe HBT on a 1.8V/3.3V dual gate oxide CMOS process in the SBC18 technology platform. The high-speed NPNs in SBC18H3 process have demonstrated NFMIN of ~2dB at 40GHz, a BVceo of 1.6V and a dc current gain of 1200. This state-of-the-art process also comes with P-I-N diodes with high isolation and low insertion losses, Schottky diodes capable of exceeding cut-off frequencies of 1THz, high density stacked MIM capacitors, MOS and high performance junction varactors characterized up to 50GHz, thick upper metal layers for inductors, and various resistors such as low value and high value unsilicided poly resistors, metal and nwell resistors. Applications of the SBC18H3 platform for millimeter-wave products for automotive radars, phased array radars and Wband imaging are presented.

  2. Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

    Science.gov (United States)

    Shklyaev, A. A.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2018-01-01

    High temperature annealing of thick (40-100 nm) Ge layers deposited on Si(100) at ˜400 °C leads to the formation of continuous films prior to their transformation into porous-like films due to dewetting. The evolution of Si-Ge composition, lattice strain, and surface morphology caused by dewetting is analyzed using scanning electron microscopy, Raman, and photoluminescence (PL) spectroscopies. The Raman data reveal that the transformation from the continuous to porous film proceeds through strong Si-Ge interdiffusion, reducing the Ge content from 60% to about 20%, and changing the stress from compressive to tensile. We expect that Ge atoms migrate into the Si substrate occupying interstitial sites and providing thereby the compensation of the lattice mismatch. Annealing generates only one type of radiative recombination centers in SiGe resulting in a PL peak located at about 0.7 and 0.8 eV for continuous and porous film areas, respectively. Since annealing leads to the propagation of threading dislocations through the SiGe/Si interface, we can tentatively associate the observed PL peak to the well-known dislocation-related D1 band.

  3. Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation

    International Nuclear Information System (INIS)

    Ghosh, Swapnadip; Kaiser, Daniel; Sinno, Talid; Bonilla, Jose; Han, Sang M.

    2015-01-01

    While vertical stacking of quantum well and dot structures is well established in heteroepitaxial semiconductor materials, manipulation of quantum barriers in the lateral directions poses a significant engineering challenge. Here, we demonstrate lateral quantum barrier manipulation in a crystalline SiGe alloy using structured mechanical fields to drive compositional redistribution. To apply stress, we make use of a nano-indenter array that is pressed against a Si 0.8 Ge 0.2 wafer in a custom-made mechanical press. The entire assembly is then annealed at high temperatures, during which the larger Ge atoms are selectively driven away from areas of compressive stress. Compositional analysis of the SiGe substrates reveals that this approach leads to a transfer of the indenter array pattern to the near-surface elemental composition, resulting in near 100% Si regions underneath each indenter that are separated from each other by the surrounding Si 0.8 Ge 0.2 bulk. The “stress transfer” process is studied in detail using multiscale computer simulations that demonstrate its robustness across a wide range of applied stresses and annealing temperatures. While the “Si nanodot” structures formed here are not intrinsically useful as quantum structures, it is anticipated that the stress transfer process may be modified by judicious control of the SiGe film thickness and indenter array pattern to form more technologically useful structures

  4. Interfacial Phonon Transport Through Si/Ge Multilayer Film Using Monte Carlo Scheme With Spectral Transmissivity

    Directory of Open Access Journals (Sweden)

    Xin Ran

    2018-05-01

    Full Text Available The knowledge of interfacial phonon transport accounting for detailed phonon spectral properties is desired because of its importance for design of nanoscale energy systems. In this work, we investigate the interfacial phonon transport through Si/Ge multilayer films using an efficient Monte Carlo scheme with spectral transmissivity, which is validated for cross-plane phonon transport through both Si/Ge single-layer and Si/Ge bi-layer thin films by comparing with the discrete-ordinates solution. Different thermal boundary conductances between even the same material pair are declared at different interfaces within the multilayer system. Furthermore, the thermal boundary conductances at different interfaces show different trends with varying total system size, with the variation slope, very different as well. The results are much different from those in the bi-layer thin film or periodic superlattice. These unusual behaviors can be attributed to the combined interfacial local non-equilibrium effect and constraint effect from other interfaces.

  5. Ion beam analysis of the dry thermal oxidation of thin polycrystalline SiGe films

    International Nuclear Information System (INIS)

    Kling, A.; Soares, J.C.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

    2005-01-01

    Nanoparticles of Ge embedded in a formed dielectric matrix appear as very promising systems for electronic and photonic applications. We present here an exhaustive characterization of the oxidation process of polycrystalline SiGe layers from the starting of its oxidation process to the total oxidation of it. We have characterized the process by RBS, FTIR and Raman spectroscopy, showing the necessity to use different techniques in order to get a full view of the process. First the Si-Si and Si-Ge bonds are oxidized growing SiO 2 , and Ge segregates from the SiO 2 . As soon as all Si is oxidized GeO 2 is growing gradually. RBS has demonstrated to be very useful to characterize the SiO 2 and the remaining non-oxidized poly-SiGe layer thickness, as well as for the determination of the Ge fraction, where the high sensitivity of this technique allows to explore its whole range. On the other hand, for the reliable determination of the GeO 2 thickness, information on the amount of Ge-O bonding had to be obtained from FTIR spectra. Raman spectroscopy yields detailed information about the oxidation processes for different bonds (Si-Si, Si-Ge, Ge-Ge)

  6. Status of the R+D programme in the field of the heat carrying and heat transfer components of the PNP project

    International Nuclear Information System (INIS)

    Mausbeck, H.; Jansing, W.

    1984-01-01

    The PNP Project (Project Nuclear Process Heat) is described. It covers the status of research and development in the field of heat exchange and heat exchanger components; concept of plant for coal gasification; description of large scale test facilities and its components; and the time schedule for the project development

  7. A Novel Bis(phosphido)pyridine [PNP] 2− Pincer Ligand and Its Potassium and Bis(dimethylamido)zirconium(IV) Complexes

    KAUST Repository

    Winston, Matthew S.

    2010-12-13

    A novel PNP bis(secondary phosphine)pyridine pincer ligand, 2,6-bis(2-(phenylphosphino)phenyl)pyridine, has been prepared in high yield, and the properties of the doubly deprotonated form as a ligand in K 4(PNP)2(THF)6 and (PNP)Zr(NMe2) 2 have been investigated. The neutral PNP ligand has been isolated as a mixture of noninterconverting diastereomers, due to the presence of two chirogenic phosphorus atoms of the secondary phopshines, but coordination of the dianionic form to potassium and zirconium allows for isolation of a single diastereomer in near-quantitative yield. The structure of a bis(dimethylamido) zirconium(IV) derivative of the bis(phosphido)pyridine ligand and DFT calculations suggest that the phosphides do not π-bond to early transition metals, likely due to geometric strain and possibly orbital size mismatch between phosphorus and zirconium. As a result, the soft phosphides are prone to formation of insoluble oligomers with substantial bridging of the phosphido lone pairs to other zirconium centers. © 2010 American Chemical Society.

  8. The Arabidopsis thaliana natriuretic peptide AtPNP-A is a systemic regulator of leaf dark respiration and signals via the phloem

    KAUST Repository

    Ruzvidzo, Oziniel

    2011-09-01

    Plant natriuretic peptides (PNPs) belong to a novel class of peptidic signaling molecules that share some structural similarity to the N-terminal domain of expansins and affect physiological processes such as water and ion homeostasis at nano-molar concentrations. Here we show that a recombinant Arabidopsis thaliana PNP (AtPNP-A) rapidly increased the rate of dark respiration in treated leaves after 5 min. In addition, we observed increases in lower leaves, and with a lag time of 10 min, the effect spread to the upper leaves and subsequently (after 15 min) to the opposite leaves. This response signature is indicative of phloem mobility of the signal, a hypothesis that was further strengthened by the fact that cold girdling, which affects phloem but not xylem or apoplastic processes, delayed the long distance AtPNP-A effect. We conclude that locally applied AtPNP-A can induce a phloem-mobile signal that rapidly modifies plant homeostasis in distal parts. © 2011 Elsevier GmbH.

  9. Preparation and biological study of 99Tcm(N) (PNP6) (Cyc-RGD) for integrin αvβ3-positive tumor imaging

    International Nuclear Information System (INIS)

    Chen Baojun; Hu Ji; Liang Jixin; Li Hongyu; Luo Lianzhe; Shen Langtao; Luo Zhifu; Chen Yang

    2007-01-01

    The Cys-RGD peptide is labelled with 99 Tc m -nitrido core combined with PNP6 lig- and (PNP6=bis (diethoxypropylphosphino ethyl) ethoxy ethylamine) to investigate the possibility of radiolabelled RGD peptides for tumor α v β 3 integrin receptor scintigraphy. The radiochemical purity is measured with HPLC, the in vitro stability is investigated at room temperature and at 37 degree C incubated in the cystein and serum solution. Biodistribution studies and gamma camera imaging are performed in normal mice and nude mice bearing FWK-1 pancreatic tumor xenografts. More than 92% radiolabelling yield is achieved under optimized condition. The high in vitro stability is found for 99 Tc m (N) (PNP6) (Cys-RGD). In vivo biodistribution studies indicate the radiolabelled peptide is cleared rapidly from blood and mainly excreted via urinary system. Tumor uptake is 2.92 ± 0.71%/g at 1 h after injection. The uptake ratios of tumor to blood and tumor to muscle (T/NT) are 11.0 and 3. 1 at 4 h after injection, respectively. Scintigraphic imaging allows contrasting visualisation of α v β 3 -expressed tumors at 1 h after injection. The results suggest 99 Tc m (N) (PNP6) (Cys- RGD) may be the potential agent for α v β 3 -positive tumor imaging. (authors)

  10. A Novel Bis(phosphido)pyridine [PNP] 2− Pincer Ligand and Its Potassium and Bis(dimethylamido)zirconium(IV) Complexes

    KAUST Repository

    Winston, Matthew S.; Bercaw, John E.

    2010-01-01

    A novel PNP bis(secondary phosphine)pyridine pincer ligand, 2,6-bis(2-(phenylphosphino)phenyl)pyridine, has been prepared in high yield, and the properties of the doubly deprotonated form as a ligand in K 4(PNP)2(THF)6 and (PNP)Zr(NMe2) 2 have been investigated. The neutral PNP ligand has been isolated as a mixture of noninterconverting diastereomers, due to the presence of two chirogenic phosphorus atoms of the secondary phopshines, but coordination of the dianionic form to potassium and zirconium allows for isolation of a single diastereomer in near-quantitative yield. The structure of a bis(dimethylamido) zirconium(IV) derivative of the bis(phosphido)pyridine ligand and DFT calculations suggest that the phosphides do not π-bond to early transition metals, likely due to geometric strain and possibly orbital size mismatch between phosphorus and zirconium. As a result, the soft phosphides are prone to formation of insoluble oligomers with substantial bridging of the phosphido lone pairs to other zirconium centers. © 2010 American Chemical Society.

  11. Basic lay-out, arrangement and design criteria of heat components of the ''nuclear coal gasification prototype plant (PNP)''

    International Nuclear Information System (INIS)

    Pruschek, R.

    1980-01-01

    Since 1975, the companies Bergbau-Forschung GmbH, GHT Gesellschaft fuer Hochtemperaturreaktor-Technik mbH, Hochtemperatur-Reaktorbau GmbH, Kernforschungsanlage Juelich GmbH und Rheinische Braunkohlenwerke AG are working jointly on the Project ''Prototype Plant Nuclear Process Heat (PNP)'', with promotion of the ''Bundesminister fuer Forschung und Technologie'' and of the ''Minister fuer Wirtschaft, Mittelstand und Verkehr des Landes Nordrhein-Westfalen''. The objectives of the project are the development of a high-temperature reactor, with a core outlet temperature of 950 0 C, suitable for various process heat applications, and the development and testing of the appropriate coal gasification technology. The applied gasifications methods comprise endothermal and exothermal reactions. Therefore, various heat transfer components are to be developed. In the context of this Specialists Meeting, only those components will be discussed by which heat is transferred from primary helium to secondary helium or from helium to the working or process fluid

  12. Avidin-biotin system: a small library of cysteine biotinylated derivatives designed for the [99mTc(N)(PNP)]2+ metal fragment

    International Nuclear Information System (INIS)

    Bolzati, Cristina; Caporale, Andrea; Agostini, Stefania; Carta, Davide; Cavazza-Ceccato, Mario; Refosco, Fiorenzo; Tisato, Francesco; Schievano, Elisabetta; Bandoli, Giuliano

    2007-01-01

    Using the avidin-biotin system as model, we investigate here the effective application of [Tc(N)L(PNP)] +/0 technology (L=N-functionalized cysteine [O - ,S - ]; PNP=aminodiphosphine) to the preparation of target-specific radiopharmaceuticals. A series of 99m Tc-nitrido complexes containing functionalized biotin ligands was prepared and their biological profile was determined. To minimize the steric and the electronic influences of the Tc-carrying complex on the biotin-avidin receptor interaction, the following N-functionalized cysteine-biotin derivatives were synthesized: (1) Biot-CysOSH; (2) Biot-Abu-CysOSH; (3) Biot-Abz-CysOSH; (4) Biot-L-(Ac)Lys-CysOSH; (5) Biot-D-(Ac)Lys-CysOSH; (6) Biot-Glu-CysOSH. The asymmetrical nitrido-Tc(V) 99g/99m Tc(N)(Biot-X-CysOS)(PNP3) (X=spacer) complexes, where PNP3 was N,N-bis-[(dimethoxypropyl)phosphinoethyl] methoxy-ethylamine, were obtained by simultaneous addition of PNP3 and the relevant biotinylated ligand to a solution containing a 99m Tc-nitrido precursor (yields >95%). In all cases, a mixture of syn- and anti isomers was observed. In vitro challenge experiments with glutathione and cysteine indicated that no transchelation reactions occurred. Assessment of the in vitro binding to avidin of the complexes revealed that only the complexes containing Biot-Abu-CysOS and Biot-Glu-CysOS ligand maintained a good affinity for the concentrator. Stability studies carried out in human and mouse plasma as well as in rat and mouse liver homogenate evidenced a rapid enzymatic degradation for the 99m Tc(N)(Biot-Abu-CysOS)(PNP3) complex, whereas the 99m Tc(N)(Biot-Glu-CysOS)(PNP3) one was stable in all conditions. Tissue biodistribution in normal Balb/C mice of the most stable candidate showed a rapid clearance both from the blood and the other tissues. The activity was eliminated both through the hepatobiliary system and the urinary tract

  13. Melanoma targeting with [99mTc(N)(PNP3)]-labeled α-melanocyte stimulating hormone peptide analogs: Effects of cyclization on the radiopharmaceutical properties

    International Nuclear Information System (INIS)

    Carta, Davide; Salvarese, Nicola; Morellato, Nicolò; Gao, Feng; Sihver, Wiebke; Pietzsch, Hans Jurgen; Biondi, Barbara; Ruzza, Paolo; Refosco, Fiorenzo; Carpanese, Debora; Rosato, Antonio; Bolzati, Cristina

    2016-01-01

    The purpose of this study was to evaluate the effect of cyclization on the biological profile of a [ 99m Tc(N)(PNP3)]-labeled α-melanocyte stimulating hormone peptide analog. A lactam bridge-cyclized H-Cys-Ahx-βAla 3 -c[Lys 4 -Glu-His-D-Phe-Arg-Trp-Glu 10 ]-Arg 11 -Pro-Val-NH 2 (NAP―NS2) and the corresponding linear H-Cys-Ahx-βAla-Nle-Asp-His-D-Phe-Arg-Trp-Gly-NH 2 (NAP―NS1) peptide were synthetized, characterized by ESI-MS spectroscopy and their melanocortin-1 receptor (MC1R) binding affinity was determined in B16/F10 melanoma cells. The consistent [ 99m Tc(N)(PNP3)]-labeled compounds were readily obtained in high specific activity and their stability and biological properties were assessed. As an example, the chemical identity of [ 99m Tc(N)(NAP–NS1)(PNP3)] + was confirmed by carrier added experiments supported by radio/UV HPLC analysis combined with ESI(+)-MS. Compared with the linear peptide, cyclization negatively affected the biological properties of NAP–NS2 peptide by reducing its binding affinity for MC1R and by decreasing the overall excretion rate of the corresponding [ 99m Tc(N)(PNP3)]-labeled peptide from the body as well as its in vivo stability. [ 99m Tc(N)(NAP–NS1)(PNP3)] + was evaluated for its potential as melanoma imaging probe in murine melanoma model. Data from in vitro and in vivo studies on B16/F10 melanoma model of [ 99m Tc(N)(NAP–NS1)(PNP3)] + clearly evidenced that the radiolabeled linear peptide keeps its biological properties up on the conjugation to the [ 99m Tc(N)(PNP3)]-building block. The progressive increase of the tumor-to-nontarget ratios over the time indicates a quite stable interaction between the radio-complex and the MC1R.

  14. SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

    Science.gov (United States)

    Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

    2017-08-01

    In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

  15. sigE facilitates the adaptation of Bordetella bronchiseptica to stress conditions and lethal infection in immunocompromised mice

    Directory of Open Access Journals (Sweden)

    Barchinger Sarah E

    2012-08-01

    Full Text Available Abstract Background The cell envelope of a bacterial pathogen can be damaged by harsh conditions in the environment outside a host and by immune factors during infection. Cell envelope stress responses preserve the integrity of this essential compartment and are often required for virulence. Bordetella species are important respiratory pathogens that possess a large number of putative transcription factors. However, no cell envelope stress responses have been described in these species. Among the putative Bordetella transcription factors are a number of genes belonging to the extracytoplasmic function (ECF group of alternative sigma factors, some of which are known to mediate cell envelope stress responses in other bacteria. Here we investigate the role of one such gene, sigE, in stress survival and pathogenesis of Bordetella bronchiseptica. Results We demonstrate that sigE encodes a functional sigma factor that mediates a cell envelope stress response. Mutants of B. bronchiseptica strain RB50 lacking sigE are more sensitive to high temperature, ethanol, and perturbation of the envelope by SDS-EDTA and certain β-lactam antibiotics. Using a series of immunocompromised mice deficient in different components of the innate and adaptive immune responses, we show that SigE plays an important role in evading the innate immune response during lethal infections of mice lacking B cells and T cells. SigE is not required, however, for colonization of the respiratory tract of immunocompetent mice. The sigE mutant is more efficiently phagocytosed and killed by peripheral blood polymorphonuclear leukocytes (PMNs than RB50, and exhibits decreased cytotoxicity toward macrophages. These altered interactions with phagocytes could contribute to the defects observed during lethal infection. Conclusions Much of the work on transcriptional regulation during infection in B. bronchiseptica has focused on the BvgAS two-component system. This study reveals that the SigE

  16. Unlocking the Origin of Superior Performance of a Si-Ge Core-Shell Nanowire Quantum Dot Field Effect Transistor.

    Science.gov (United States)

    Dhungana, Kamal B; Jaishi, Meghnath; Pati, Ranjit

    2016-07-13

    The sustained advancement in semiconducting core-shell nanowire technology has unlocked a tantalizing route for making next generation field effect transistor (FET). Understanding how to control carrier mobility of these nanowire channels by applying a gate field is the key to developing a high performance FET. Herein, we have identified the switching mechanism responsible for the superior performance of a Si-Ge core-shell nanowire quantum dot FET over its homogeneous Si counterpart. A quantum transport approach is used to investigate the gate-field modulated switching behavior in electronic current for ultranarrow Si and Si-Ge core-shell nanowire quantum dot FETs. Our calculations reveal that for the ON state, the gate-field induced transverse localization of the wave function restricts the carrier transport to the outer (shell) layer with the pz orbitals providing the pathway for tunneling of electrons in the channels. The higher ON state current in the Si-Ge core-shell nanowire FET is attributed to the pz orbitals that are distributed over the entire channel; in the case of Si nanowire, the participating pz orbital is restricted to a few Si atoms in the channel resulting in a smaller tunneling current. Within the gate bias range considered here, the transconductance is found to be substantially higher in the case of a Si-Ge core-shell nanowire FET than in a Si nanowire FET, which suggests a much higher mobility in the Si-Ge nanowire device.

  17. Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

    DEFF Research Database (Denmark)

    Lu, Weifang; Li, Cheng; Lin, Guangyang

    2015-01-01

    Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...... nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors...

  18. Low thermal budget surface preparation of Si and SiGe

    International Nuclear Information System (INIS)

    Abbadie, A.; Hartmann, J.M.; Holliger, P.; Semeria, M.N.; Besson, P.; Gentile, P.

    2004-01-01

    Using a two-step cleaning, we have investigated the low thermal budget surface preparation of Si and Si 1-x Ge x (x=0.2-0.33). It consists of an ex situ 'HF-last' wet-cleaning and an in situ low thermal budget H 2 bake in a reduced pressure-chemical vapor deposition reactor. Using secondary ion mass spectrometry, we have evaluated the effects of different H 2 bake temperatures (in between 750 and 850 deg. C for 2 min) on the removal efficiency of C, O and F atoms still present on the surface of Si and SiGe virtual substrates after the 'HF-last' wet-cleaning. We have then examined the impact of the (wet-cleaning+H 2 bake) combination on the surface cross-hatch of SiGe as-grown virtual substrates, focusing on the analysis, notably by atomic force microscopy, of the surface topography before and after the miscellaneous thermal treatments. In situ hydrogen baking steps in between 775 and 850 deg. C do not modify the surface morphology and roughness. An easy and rapid optical characterization method, i.e. the optical interferometry, is presented as well to monitor in line the morphological changes induced by such processing steps as chemical mechanical polishing, wet-cleaning, H 2 bake, etc. Despite the lower resolution of the optical profilometer, the surface roughness values coming from it have been correctly correlated with those obtained from AFM. An optimized 'HF-last' wet-cleaning using a diluted chemistry in conjunction with a H 2 bake at 800 deg. C for 2 min (775 deg. C, 2') is a good compromise for SiGe (Si) surface preparation

  19. Thermal conductivity engineering of bulk and one-dimensional Si-Ge nanoarchitectures.

    Science.gov (United States)

    Kandemir, Ali; Ozden, Ayberk; Cagin, Tahir; Sevik, Cem

    2017-01-01

    Various theoretical and experimental methods are utilized to investigate the thermal conductivity of nanostructured materials; this is a critical parameter to increase performance of thermoelectric devices. Among these methods, equilibrium molecular dynamics (EMD) is an accurate technique to predict lattice thermal conductivity. In this study, by means of systematic EMD simulations, thermal conductivity of bulk Si-Ge structures (pristine, alloy and superlattice) and their nanostructured one dimensional forms with square and circular cross-section geometries (asymmetric and symmetric) are calculated for different crystallographic directions. A comprehensive temperature analysis is evaluated for selected structures as well. The results show that one-dimensional structures are superior candidates in terms of their low lattice thermal conductivity and thermal conductivity tunability by nanostructuring, such as by diameter modulation, interface roughness, periodicity and number of interfaces. We find that thermal conductivity decreases with smaller diameters or cross section areas. Furthermore, interface roughness decreases thermal conductivity with a profound impact. Moreover, we predicted that there is a specific periodicity that gives minimum thermal conductivity in symmetric superlattice structures. The decreasing thermal conductivity is due to the reducing phonon movement in the system due to the effect of the number of interfaces that determine regimes of ballistic and wave transport phenomena. In some nanostructures, such as nanowire superlattices, thermal conductivity of the Si/Ge system can be reduced to nearly twice that of an amorphous silicon thermal conductivity. Additionally, it is found that one crystal orientation, [Formula: see text]100[Formula: see text], is better than the [Formula: see text]111[Formula: see text] crystal orientation in one-dimensional and bulk SiGe systems. Our results clearly point out the importance of lattice thermal conductivity

  20. Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

    Science.gov (United States)

    Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

    2015-04-01

    Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

  1. Magnetic behavior of Si-Ge bond in SixGe4-x nano-clusters

    Science.gov (United States)

    Nahali, Masoud; Mehri, Ali

    2018-06-01

    The structure of SixGe4-x nano-clusters were optimized by MPW1B95 level of theory using MG3S and SDB-aug-cc-PVTZ basis set. The agreement of the calculated ionization and dissociation energies with experimental values validates the reported structures of nano-clusters and justifies the use of hybrid meta density functional method. Since the Si-Si bond is stronger than Si-Ge and Ge-Ge bonds, the Si-Si, Si-Ge, and Ge-Ge diagonal bonds determine the precedence of the stability in these nano-clusters. The hybrid meta density functional calculations were carried out to investigate the adsorption of CO on all possible SixGe4-x nano-clusters. It was found that the silicon atom generally makes a stronger bond with CO than germanium and thereby preferentially affects the shape of structures having higher multiplicity. In Si-Ge structures with higher spin more than 95% of spins accumulate on positions with less bonds to other atoms of the cluster. Through CO adsorption on these clusters bridge structures are made that behave as spin bridge which conduct the spin from the nano-cluster surface to the adsorbate atoms. A better understanding of bridged structures was achieved upon introducing the 'spin bridge' concept. Based on exhaustive spin density analysis, it was found that the reason for the extra negative charge on oxygen in the bridged structures is the relocation of spin from the surface through the bridge.

  2. SiGe HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers

    OpenAIRE

    Pan, Hsuan-yu

    2010-01-01

    This research work aims on exploiting SiGe HBT technologies in high dynamic range wideband RF linear-in- dB envelope detectors and linear amplifiers. First, an improved all-npn broadband highly linear SiGe HBT differential amplifier is presented based on a variation of Caprio's Quad. A broadband linear amplifier with 46dBm OIP₃ at 20MHz, 34dBm OIP₃ at 1GHz, 6dB noise figure and 10.3dBm P₁dB is demonstrated. Second, an improved exact dynamic model of a fast-settling linear-in-dB Automatic Gain...

  3. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Lavoie, Christian; Jordan-Sweet, Jean [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States); Alptekin, Emre; Zhu, Frank [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M. [TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821 (United States)

    2016-04-21

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  4. A note on the Sumerian expression SI-ge4-de3/dam

    Directory of Open Access Journals (Sweden)

    Widell, Magnus

    2002-12-01

    Full Text Available The expression SI-ge4-dam/de3 appears in some of the loan documents of the Ur III period where it was used to establish the interest rate or the loan fee. In addition, it is sometimes preceded by ki-ba 'in its/this place/ground' or, in some cases, ma2 -a 'in the boat'. The regular verb SI.g was closely related, perhaps even synonymous with, the reduplication verb ḡar/ḡa2-ḡa2 'to put' or 'to place'. While it may be concluded that SI-ge4-dam/de3 had nothing to do with the verb si 'to fill' or gi4 'to return', the correct analysis of the expression remains somewhat uncertain. The article proposes that the SI should be read se and understood as a phonetic writing for the regular verb se3.g 'to put', 'to place'. The combination of the verb with the ki-ba may suggest that a more parochial form of keeping products existed side by side with the large centralized granaries and storehouses of the city.La expresión SI-ge4-dam/de3 aparece en algunos contratos de préstamo del período de Ur III, donde se empleaba para determinar el interés de dicho préstamo. Por otra parte, este término se hallaba a veces precedido de ki-ba 'en su/este lugar/suelo', y en algunos casos por ma2 -a 'en la barca'. El verbo regular SI.g está muy relacionado (quizás es incluso sinónimo con el verbo de la clase de la reduplicación ḡar/ḡa2-ḡa2 'poner' o 'colocar'. Mientras que puede concluirse que SI-ge4-dam/de3 no tiene nada que ver con el verbo si 'llenar', ni con gi4 'regresar, devolver', el análisis correcto de la expresión sigue siendo, de algún modo, incierto. En el artículo se propone que SI puede leerse como se , entendiéndolo como una escritura fonética del verbo regular se3.g 'poner', 'colocar'. La combinación del verbo con ki-ba podría indicar que, junto a los grandes graneros y almacenes centrales de la ciudad, había un modo distinto y más modesto de conservar los productos.

  5. Observation of spin-selective tunneling in SiGe nanocrystals.

    Science.gov (United States)

    Katsaros, G; Golovach, V N; Spathis, P; Ares, N; Stoffel, M; Fournel, F; Schmidt, O G; Glazman, L I; De Franceschi, S

    2011-12-09

    Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

  6. Technology computer aided design for Si, SiGe and GaAs integrated circuits

    CERN Document Server

    Armstrong, GA

    2007-01-01

    The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are compared with experimental data from state-of-the-art devices. With various aspects of silicon heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-

  7. Actinide-pnictide (An-Pn) bonds spanning non-metal, metalloid, and metal combinations (An=U, Th; Pn=P, As, Sb, Bi)

    Energy Technology Data Exchange (ETDEWEB)

    Rookes, Thomas M.; Wildman, Elizabeth P.; Gardner, Benedict M.; Wooles, Ashley J.; Gregson, Matthew; Tuna, Floriana; Liddle, Stephen T. [School of Chemistry, The University of Manchester (United Kingdom); Balazs, Gabor; Scheer, Manfred [Institute of Inorganic Chemistry, University of Regensburg (Germany)

    2018-01-26

    The synthesis and characterisation is presented of the compounds [An(Tren{sup DMBS}){Pn(SiMe_3)_2}] and [An(Tren{sup TIPS}){Pn(SiMe_3)_2}] [Tren{sup DMBS}=N(CH{sub 2}CH{sub 2}NSiMe{sub 2}Bu{sup t}){sub 3}, An=U, Pn=P, As, Sb, Bi; An=Th, Pn=P, As; Tren{sup TIPS}=N(CH{sub 2}CH{sub 2}NSiPr{sup i}{sub 3}){sub 3}, An=U, Pn=P, As, Sb; An=Th, Pn=P, As, Sb]. The U-Sb and Th-Sb moieties are unprecedented examples of any kind of An-Sb molecular bond, and the U-Bi bond is the first two-centre-two-electron (2c-2e) one. The Th-Bi combination was too unstable to isolate, underscoring the fragility of these linkages. However, the U-Bi complex is the heaviest 2c-2e pairing of two elements involving an actinide on a macroscopic scale under ambient conditions, and this is exceeded only by An-An pairings prepared under cryogenic matrix isolation conditions. Thermolysis and photolysis experiments suggest that the U-Pn bonds degrade by homolytic bond cleavage, whereas the more redox-robust thorium compounds engage in an acid-base/dehydrocoupling route. (copyright 2018 The Authors. Published by Wiley-VCH Verlag GmbH and Co. KGaA.)

  8. Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching.

    Science.gov (United States)

    Irrera, Alessia; Artoni, Pietro; Fioravanti, Valeria; Franzò, Giorgia; Fazio, Barbara; Musumeci, Paolo; Boninelli, Simona; Impellizzeri, Giuliana; Terrasi, Antonio; Priolo, Francesco; Iacona, Fabio

    2014-02-12

    Multi-quantum well Si/Ge nanowires (NWs) were realized by combining molecular beam epitaxy deposition and metal-assisted wet etching, which is a low-cost technique for the synthesis of extremely dense (about 1011 cm-2) arrays of NWs with a high and controllable aspect ratio. In particular, we prepared ultrathin Si/Ge NWs having a mean diameter of about 8 nm and lengths spanning from 1.0 to 2.7 μm. NW diameter is compatible with the occurrence of quantum confinement effects and, accordingly, we observed light emission assignable to the presence of Si and Ge nanostructures. We performed a detailed study of the photoluminescence properties of the NWs, with particular attention to the excitation and de-excitation properties as a function of the temperature and of the excitation photon flux, evaluating the excitation cross section and investigating the presence of non-radiative phenomena. PACS: 61.46.Km; 78.55.-m; 78.67.Lt.

  9. Ordered Arrays of SiGe Islands from Low-Energy PECVD

    Directory of Open Access Journals (Sweden)

    Chrastina D

    2010-01-01

    Full Text Available Abstract SiGe islands have been proposed for applications in the fields of microelectronics, optoelectronics and thermoelectrics. Although most of the works in literature are based on MBE, one of the possible advantages of low-energy plasma-enhanced chemical vapor deposition (LEPECVD is a wider range of deposition rates, which in turn results in the possibility of growing islands with a high Ge concentration. We will show that LEPECVD can be effectively used for the controlled growth of ordered arrays of SiGe islands. In order to control the nucleation of the islands, patterned Si (001 substrates were obtained by e-beam lithography (EBL and dry etching. We realized periodic circular pits with diameters ranging from 80 to 300 nm and depths from 65 to 75 nm. Subsequently, thin films (0.8–3.2 nm of pure Ge were deposited by LEPECVD, resulting in regular and uniform arrays of Ge-rich islands. LEPECVD allowed the use of a wide range of growth rates (0.01–0.1 nm s−1 and substrates temperatures (600–750°C, so that the Ge content of the islands could be varied. Island morphology was characterized by AFM, while μ-Raman was used to analyze the Ge content inside the islands and the composition differences between islands on patterned and unpatterned areas of the substrate.

  10. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

    Science.gov (United States)

    Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

    2018-01-01

    Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

  11. Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane

    Energy Technology Data Exchange (ETDEWEB)

    Abedin, A., E-mail: aabedin@kth.se; Moeen, M.; Cappetta, C.; Östling, M.; Radamson, H.H., E-mail: rad@kth.se

    2016-08-31

    This work investigates the crystal quality of SiGe layers grown at low temperatures using trisilane, and germane precursors. The crystal quality sensitivity was monitored for hydrogen chloride and/or minor oxygen amount during SiGe epitaxy or at the interface of SiGe/Si layers. The quality of the epi-layers was examined by quantifying noise parameter, K{sub 1/f} obtained from the power spectral density vs. 1/f curves. The results indicate that while it is difficult to detect small defect densities in SiGe layers by physical material characterization, the noise measurement could reveal the effects of oxygen contamination as low as 0.16 mPa inside and in the interface of the layers. - Highlights: • SiGe layers were grown using trisilane and germane. • Effect of HCl flow on Ge content and growth rate was investigated. • O{sub 2} partial pressures up to 4.3 mPa did not affect x-ray diffraction pattern. • O{sub 2} partial pressures as low as 0.16 mPa increased the noise level. • HCl increased metal contaminations of the layers and the noise level consequently.

  12. The Relationship between Nanocluster Precipitation and Thermal Conductivity in Si/Ge Amorphous Multilayer Films: Effects of Cu Addition

    Directory of Open Access Journals (Sweden)

    Ahmad Ehsan Mohd Tamidi

    2016-01-01

    Full Text Available We have used a molecular dynamics technique to simulate the relationship between nanocluster precipitation and thermal conductivity in Si/Ge amorphous multilayer films, with and without Cu addition. In the study, the Green-Kubo equation was used to calculate thermal conductivity in these materials. Five specimens were prepared: Si/Ge layers, Si/(Ge + Cu layers, (Si + Cu/(Ge + Cu layers, Si/Cu/Ge/Cu layers, and Si/Cu/Ge layers. The number of precipitated nanoclusters in these specimens, which is defined as the number of four-coordinate atoms, was counted along the lateral direction of the specimens. The observed results of precipitate formation were considered in relation to the thermal conductivity results. Enhancement of precipitation of nanoclusters by Cu addition, that is, densification of four-coordinate atoms, can prevent the increment of thermal conductivity. Cu dopant increases the thermal conductivity of these materials. Combining these two points, we concluded that Si/Cu/Ge is the best structure to improve the conversion efficiency of the Si/Ge amorphous multilayer films.

  13. Extended x-ray absorption fine structure studies of amorphous and crystalline Si-Ge alloys with synchrotron radiation

    International Nuclear Information System (INIS)

    Kajiyama, Hiroshi

    1988-01-01

    Extended X-ray absorption fine structure (EXAFS) is a powerful probe to study the local structure around the atom of a specific element. In conventional EXAFS analysis, it has been known that reliable structures are obtained with the different values of absorption edge energy for different neighboring atoms. It is shown in this study that the Ge-K edge EXAFS resulting from the Ge-Ge and Ge-Si bonds in hydrogenated amorphous Si-Ge alloys was able to be excellently explained by a unique absorption edge energy value, provided that a newly developed formula based on the spherical wave function of photoelectrons is used. The microscopic structures of hydrogenated amorphous Si-Ge alloys and crystalline Si-Ge alloys have been determined using the EXAFS method. The lengths of Ge-Ge and Ge-Si bonds were constant throughout their entire composition range, and it was found that the length of Ge-Si bond was close to the average value of the bond lengths of both Ge and Si crystals. In crystalline Si-Ge alloys, it has been shown that the bonds relaxed completely, while the lattice constant varied monotonously with the composition. (Kako, I.)

  14. 1.45 A resolution crystal structure of recombinant PNP in complex with a pM multisubstrate analogue inhibitor bearing one feature of the postulated transition state

    International Nuclear Information System (INIS)

    Chojnowski, Grzegorz; Breer, Katarzyna; Narczyk, Marta; Wielgus-Kutrowska, Beata; Czapinska, Honorata; Hashimoto, Mariko; Hikishima, Sadao; Yokomatsu, Tsutomu; Bochtler, Matthias; Girstun, Agnieszka; Staron, Krzysztof; Bzowska, Agnieszka

    2010-01-01

    Low molecular mass purine nucleoside phosphorylases (PNPs, E.C. 2.4.2.1) are homotrimeric enzymes that are tightly inhibited by immucillins. Due to the positive charge on the ribose like part (iminoribitol moiety) and protonation of the N7 atom of the purine ring, immucillins are believed to act as transition state analogues. Over a wide range of concentrations, immucillins bind with strong negative cooperativity to PNPs, so that only every third binding site of the enzyme is occupied (third-of-the-sites binding). 9-(5',5'-difluoro-5'-phosphonopentyl)-9-deazaguanine (DFPP-DG) shares with immucillins the protonation of the N7, but not the positive charge on the ribose like part of the molecule. We have previously shown that DFPP-DG interacts with PNPs with subnanomolar inhibition constant. Here, we report additional biochemical experiments to demonstrate that the inhibitor can be bound with the same K d (∼190 pM) to all three substrate binding sites of the trimeric PNP, and a crystal structure of PNP in complex with DFPP-DG at 1.45 A resolution, the highest resolution published for PNPs so far. The crystals contain the full PNP homotrimer in the asymmetric unit. DFPP-DG molecules are bound in superimposable manner and with full occupancies to all three PNP subunits. Thus the postulated third-of-the-sites binding of immucillins should be rather attribute to the second feature of the transition state, ribooxocarbenium ion character of the ligand or to the coexistence of both features characteristic for the transition state. The DFPP-DG/PNP complex structure confirms the earlier observations, that the loop from Pro57 to Gly66 covering the phosphate-binding site cannot be stabilized by phosphonate analogues. The loop from Glu250 to Gln266 covering the base-binding site is organized by the interactions of Asn243 with the Hoogsteen edge of the purine base of analogues bearing one feature of the postulated transition state (protonated N7 position).

  15. A high linearity SiGe HBT LNA for GPS receiver

    International Nuclear Information System (INIS)

    Luo Yanbin; Shi Jian; Ma Chengyan; Gan Yebing; Qian Min

    2014-01-01

    A high linearity 1.575 GHz SiGe:HBT low noise amplifier (LNA) for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process. A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1.11 dB, a power gain of 18 dB, an output 1 dB compression point of +7.8 dBm and an input third-order intercept point of +1.8 dBm. The chip occupies a 500 × 560 μm 2 area and consumes 3.6 mA from a 2.85 V power supply. (semiconductor integrated circuits)

  16. Boron diffusion in strained and strain-relaxed SiGe

    International Nuclear Information System (INIS)

    Wang, C.C.; Sheu, Y.M.; Liu, Sally; Duffy, R.; Heringa, A.; Cowern, N.E.B.; Griffin, P.B.

    2005-01-01

    SiGe has been utilized for aggressive CMOS technologies development recently and there are many references [M. Shima, T. Ueno, T. Kumise, H. Shido, Y. Sakuma, S. Nakamura, Symposium on VLSI Technology Technical Digest, 2002, pp. 94-95; T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson, M. Bohr, International Electron Devices Meeting Technical Digest, December 2003, pp. 978-980; P. Bai, C. Auth, S. Balakrishnan, M. Bost, R. Brain, V. Chikarmane, R. Heussner, M. Hussein, J. Hwang, D. Ingerly, R. James, J. Jeong, C. Kenyon, E. Lee, S. Lee, N. Lindert, M. Liu, Z. Ma, T. Marieb, A. Murthy, R. Nagisetty, S. Natarajan, J. Neirynck, A. Ott, C. Parker, J. Sebastian, R. Shaheed, S. Sivakumar, J. Steigerwald, S. Tyagi, C. Weber, B. Woolery, A. Yeoh, K. Zhang, M. Bohr, International Electron Devices Meeting Technical Digest, December 2004, pp. 657-660] presenting the advantages brought by it. A better understanding regarding the boron diffusion behavior within and in the vicinity of SiGe is necessary to optimize the extension and the source/drain in pMOSFET. In order to achieve the goal, both effects from mechanical strain and Ge doping on boron diffusion have been investigated. However, only a few publications discuss the impacts of both. Furthermore, most researches investigate these two effects under the conditions of low boron concentration [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl. Phys. 94 (September (6)) (2003) 3883-3890] and high thermal budget anneal [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl

  17. Examination Of Si-Ge Heterostructure Nanowire Growth Using Monte Carlo Simulation

    International Nuclear Information System (INIS)

    Nastovjak, A. G.; Neizvestny, I. G.; Shwartz, N. L.

    2011-01-01

    The process of Si-Ge heterostructures formation in nanowires (NWs) grown by vapor-liquid-solid mechanism was investigated using Monte Carlo simulation. Dependences of catalyst drop composition on temperature, flux intensity and nanowire diameter were obtained. Periodical oscillations of drop composition near mean value were observed. Oscillation results from layer-by-layer growth at the drop-whisker interface and necessity of supersaturation onset to start new layer formation. It was demonstrated that it is impossible to grow atomically abrupt axial heterojunctions via classical vapor-liquid-solid mechanism due to gradual change of catalyst drop composition when switching the fluxes. This phenomenon is the main reason of heterojunction blurriness. Junction abruptness was found to be dependent on nanowhisker diameter: in adsorption-induced growth mode abruptness of heterojunction decreases with diameter and in diffusion-induced mode it increases.

  18. Micromachined single-level nonplanar polycrystalline SiGe thermal microemitters for infrared dynamic scene projection

    Science.gov (United States)

    Malyutenko, V. K.; Malyutenko, O. Yu.; Leonov, V.; Van Hoof, C.

    2009-05-01

    The technology for self-supported membraneless polycrystalline SiGe thermal microemitters, their design, and performance are presented. The 128-element arrays with a fill factor of 88% and a 2.5-μm-thick resonant cavity have been grown by low-pressure chemical vapor deposition and fabricated using surface micromachining technology. The 200-nm-thick 60×60 μm2 emitting pixels enforced with a U-shape profile pattern demonstrate a thermal time constant of 2-7 ms and an apparent temperature of 700 K in the 3-5 and 8-12 μm atmospheric transparency windows. The application of the devices to the infrared dynamic scene simulation and their benefit over conventional planar membrane-supported emitters are discussed.

  19. Surface and interfacial structural characterization of MBE grown Si/Ge multilayers

    International Nuclear Information System (INIS)

    Saha, Biswajit; Sharma, Manjula; Sarma, Abhisakh; Rath, Ashutosh; Satyam, P.V.; Chakraborty, Purushottam; Sanyal, Milan K.

    2009-01-01

    Si/Ge multilayer structures have been grown by solid source molecular beam epitaxy (MBE) on Si (1 1 1) and (1 0 0) substrates and were characterized by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), high-depth-resolution secondary ion mass spectroscopy (SIMS) and cross-section high-resolution transmission electron microscopy (HRTEM). A reasonably good agreement has been obtained for layer thickness, interfacial structure and diffusion between SIMS and HRTEM measurements. Epitaxial growth and crystalline nature of the individual layer have been probed using cross-sectional HRTEM and XRD measurements. Surface and interface morphological studies by AFM and HRTEM show island-like growth of both Si and Ge nanostructures.

  20. Self-assembly of InAs and Si/Ge quantum dots on structured surfaces

    International Nuclear Information System (INIS)

    Patella, F; Sgarlata, A; Arciprete, F; Nufris, S; Szkutnik, P D; Placidi, E; Fanfoni, M; Motta, N; Balzarotti, A

    2004-01-01

    We discuss the self-aggregation process of InAs and Si-Ge quantum dots (QDs) on natural and patterned GaAs(001) and Si(001) and Si(111) surfaces, with reference to our recent studies with scanning tunnelling and atomic force microscopy and current experimental and theoretical works. Various methods for obtaining naturally structured surfaces are briefly surveyed, as the patterning formed by the surface instability and by the strain in mismatched heteroepitaxy, and the latest methods of pre-patterning and growth at selected sites are discussed. Basic topics are also addressed that determine the final morphology of QDs, such as the wetting layer formation, the elastic strain field and the two-dimensional to three-dimensional phase transition

  1. Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

    KAUST Repository

    Zhou, Guangnan

    2018-04-03

    Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

  2. Reliability of high mobility SiGe channel MOSFETs for future CMOS applications

    CERN Document Server

    Franco, Jacopo; Groeseneken, Guido

    2014-01-01

    Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and pr...

  3. Influence of alloy disorder scattering on the hole mobility of SiGe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Blanque, Celso; Ruiz, Francisco G., E-mail: franruiz@ugr.es; Godoy, Andres, E-mail: agodoy@ugr.es; Marin, Enrique G.; Donetti, Luca; Gámiz, Francisco [Dpto. de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada (Spain)

    2014-12-28

    In this work, we analyze the influence of the alloy disorder (AD) scattering on the low-field hole mobility of Si{sub 1-x}Ge{sub x} nanowires (NWs). To do it, the electrostatic description is achieved through a self-consistent solution of the Poisson equation and the six-band k⋅p method in the cross section of the NW. The momentum relaxation time approximation is used to calculate the hole mobility, including alloy disorder and phonon scattering mechanisms, and the use of approximations to calculate the overlap integrals for the scattering matrix elements is discussed. We study the influence of the alloy disorder scattering on the total mobility compared to the phonon contribution, for different values of the AD scattering parameter proposed in the literature, and analyze the performance of SiGe NWs as a function of the Ge molar fraction for both low and high inversion charge densities.

  4. Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

    KAUST Repository

    Zhou, Guangnan; Lee, Kwang Hong; Anjum, Dalaver H.; Zhang, Qiang; Zhang, Xixiang; Tan, Chuan Seng; Xia, Guangrui

    2018-01-01

    Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

  5. Factores que influyen en la definición del perfil profesional del egresado de la ETS-PNP y el desempeño laboral.

    OpenAIRE

    García Casas, Oswaldo German

    2015-01-01

    El presente trabajo de investigación se ha centrado en la Escuela Técnico Superior de la Policía Nacional del Perú de Puente Piedra (ETS-PNPPP), teniendo como unidad de análisis los cadetes del último año de egreso. El objetivo principal ha sido establecer los factores que influyen en la definición del perfil profesional del egresado de la ETS-PNP-Puente Piedra; considerando que Lima Metropolitana en particular viene soportando un clima de inseguridad, debido al crecimiento de la criminali...

  6. A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD

    Science.gov (United States)

    Yamamoto, Yuji; Zaumseil, Peter; Capellini, Giovanni; Schubert, Markus Andreas; Hesse, Anne; Albani, Marco; Bergamaschini, Roberto; Montalenti, Francesco; Schroeder, Thomas; Tillack, Bernd

    2017-12-01

    Self-ordered three-dimensional body-centered tetragonal (BCT) SiGe nanodot structures are fabricated by depositing SiGe/Si superlattice layer stacks using reduced pressure chemical vapor deposition. For high enough Ge content in the island (>30%) and deposition temperature of the Si spacer layers (T > 700 °C), we observe the formation of an ordered array with islands arranged in staggered position in adjacent layers. The in plane periodicity of the islands can be selected by a suitable choice of the annealing temperature before the Si spacer layer growth and of the SiGe dot volume, while only a weak influence of the Ge concentration is observed. Phase-field simulations are used to clarify the driving force determining the observed BCT ordering, shedding light on the competition between heteroepitaxial strain and surface-energy minimization in the presence of a non-negligible surface roughness.

  7. Evaluation of COTS SiGe, SOI, and Mixed Signal Electronic Parts for Extreme Temperature Use in NASA Missions

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad

    2010-01-01

    The NASA Electronic Parts and Packaging (NEPP) Program sponsors a task at the NASA Glenn Research Center titled "Reliability of SiGe, SOI, and Advanced Mixed Signal Devices for Cryogenic Space Missions." In this task COTS parts and flight-like are evaluated by determining their performance under extreme temperatures and thermal cycling. The results from the evaluations are published on the NEPP website and at professional conferences in order to disseminate information to mission planners and system designers. This presentation discusses the task and the 2010 highlights and technical results. Topics include extreme temperature operation of SiGe and SOI devices, all-silicon oscillators, a floating gate voltage reference, a MEMS oscillator, extreme temperature resistors and capacitors, and a high temperature silicon operational amplifier.

  8. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Pengfei; Zhang, Yuwen, E-mail: zhangyu@missouri.edu [Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211 (United States); Yang, Mo [College of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China)

    2013-12-21

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

  9. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    International Nuclear Information System (INIS)

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2013-01-01

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective

  10. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    Science.gov (United States)

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2013-12-01

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

  11. Nanogrids and Beehive-Like Nanostructures Formed by Plasma Etching the Self-Organized SiGe Islands

    Science.gov (United States)

    Chang, Yuan-Ming; Jian, Sheng-Rui; Juang, Jenh-Yih

    2010-09-01

    A lithography-free method for fabricating the nanogrids and quasi-beehive nanostructures on Si substrates is developed. It combines sequential treatments of thermal annealing with reactive ion etching (RIE) on SiGe thin films grown on (100)-Si substrates. The SiGe thin films deposited by ultrahigh vacuum chemical vapor deposition form self-assembled nanoislands via the strain-induced surface roughening (Asaro-Tiller-Grinfeld instability) during thermal annealing, which, in turn, serve as patterned sacrifice regions for subsequent RIE process carried out for fabricating nanogrids and beehive-like nanostructures on Si substrates. The scanning electron microscopy and atomic force microscopy observations confirmed that the resultant pattern of the obtained structures can be manipulated by tuning the treatment conditions, suggesting an interesting alternative route of producing self-organized nanostructures.

  12. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

    International Nuclear Information System (INIS)

    Ghandi, R.; Kolahdouz, M.; Hallstedt, J.; Wise, R.; Wejtmans, Hans; Radamson, H.H.

    2008-01-01

    In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si 1-x Ge x (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers

  13. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

    Energy Technology Data Exchange (ETDEWEB)

    Ghandi, R. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: ghandi@kth.se; Kolahdouz, M.; Hallstedt, J. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden); Wise, R.; Wejtmans, Hans [Texas Instrument, 13121 TI Boulevard, Dallas, Tx 75243 (United States); Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-11-03

    In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si{sub 1-x}Ge{sub x} (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers.

  14. The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer

    International Nuclear Information System (INIS)

    Brehm, M.; Grydlik, M.; Groiss, H.; Hackl, F.; Schaeffler, F.; Fromherz, T.; Bauer, G.

    2011-01-01

    For the prototypical SiGe/Si(001) Stranski-Krastanow (SK) growth system, the influence of intermixing caused by the deposition of a Si cap layer at temperatures T cap between 300 deg. C and 700 deg. C is studied both for the SiGe wetting layer (WL) and the SiGe islands. Systematic growth experiments were carried out with an ultrahigh resolution of down to 0.005 monolayers (ML) of deposited Ge. The properties of the samples were investigated via photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy. We studied in detail the influence of T cap in the three main coverage regions of SiGe SK growth, which are (i) the WL build-up regime, (ii) the island nucleation regime, where most of the Ge is supplied via material transfer from the WL, and (iii) the saturation regime, where the WL thickness remains initially stable. At T cap = 300 deg. C, we found that both the WL and the island are essentially preserved in composition and shape, whereas at 500 deg. C the WL becomes heavily alloyed during capping, and at 700 deg. C the islands also become alloyed. At T cap = 500 deg. C we found enhanced WL intermixing in the presence of dome-shaped islands, whereas at T cap 700 deg. C the WL properties become dominated by the dissolution of pyramid-shaped islands upon capping. At Ge coverages above ≅6 ML, we found an unexpected thickening of the WL, almost independently of T cap . This finding suggests that the density and the volume of the dome-shaped islands have an upper limit, beyond which excess Ge from the external source again becomes incorporated into the WL. Finally, we compared PL spectra with AFM-based evaluations of the integral island volumes in order to determine in a straightforward manner the average composition of the SiGe islands.

  15. On the interplay between phonon-boundary scattering and phonon-point-defect scattering in SiGe thin films

    Science.gov (United States)

    Iskandar, A.; Abou-Khalil, A.; Kazan, M.; Kassem, W.; Volz, S.

    2015-03-01

    This paper provides theoretical understanding of the interplay between the scattering of phonons by the boundaries and point-defects in SiGe thin films. It also provides a tool for the design of SiGe-based high-efficiency thermoelectric devices. The contributions of the alloy composition, grain size, and film thickness to the phonon scattering rate are described by a model for the thermal conductivity based on the single-mode relaxation time approximation. The exact Boltzmann equation including spatial dependence of phonon distribution function is solved to yield an expression for the rate at which phonons scatter by the thin film boundaries in the presence of the other phonon scattering mechanisms. The rates at which phonons scatter via normal and resistive three-phonon processes are calculated by using perturbation theories with taking into account dispersion of confined acoustic phonons in a two dimensional structure. The vibrational parameters of the model are deduced from the dispersion of confined acoustic phonons as functions of temperature and crystallographic direction. The accuracy of the model is demonstrated with reference to recent experimental investigations regarding the thermal conductivity of single-crystal and polycrystalline SiGe films. The paper describes the strength of each of the phonon scattering mechanisms in the full temperature range. Furthermore, it predicts the alloy composition and film thickness that lead to minimum thermal conductivity in a single-crystal SiGe film, and the alloy composition and grain size that lead to minimum thermal conductivity in a polycrystalline SiGe film.

  16. Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2006-01-01

    .5 GHz and ≫ 10 GHz for SiGe BiCMOS and GaAs MMIC, respectively. Analysis of the frequency behaviour of frequency converting devices is presented for improved mixer design. Millimeter-wave front-end components for advanced microwave imaging and communications purposes have also been demonstrated......Analog MMIC circuits with ultra-wideband operation are discussed in view of their frequency limitation and different circuit topologies. Results for designed and fabricated frequency converters in SiGe, GaAs, and InP technologies are presented in the paper. RF type circuit topologies exhibit a flat...... conversion gain with a 3 dB bandwidth of 10 GHz for SiGe and in excess of 20 GHz for GaAs processes. The concurrent LO-IF isolation is better than -25 dB, without including the improvement due to the combiner circuit. The converter circuits exhibit similar instantaneous bandwidth at IF and RF ports of ≫ 7...

  17. Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

    Science.gov (United States)

    Cui, J; Lv, Y; Yang, X J; Fan, Y L; Zhong, Z; Jiang, Z M

    2011-03-25

    The size uniformity of self-assembled SiGe quantum rings, which are formed by capping SiGe quantum dots with a thin Si layer, is found to be greatly influenced by the growth temperature and the areal density of SiGe quantum dots. Higher growth temperature benefits the size uniformity of quantum dots, but results in low Ge concentration as well as asymmetric Ge distribution in the dots, which induces the subsequently formed quantum rings to be asymmetric in shape or even broken somewhere in the ridge of rings. Low growth temperature degrades the size uniformity of quantum dots, and thus that of quantum rings. A high areal density results in the expansion and coalescence of neighboring quantum dots to form a chain, rather than quantum rings. Uniform quantum rings with a size dispersion of 4.6% and an areal density of 7.8×10(8) cm(-2) are obtained at the optimized growth temperature of 640°C.

  18. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    Energy Technology Data Exchange (ETDEWEB)

    Vanacore, G. M.; Zani, M.; Tagliaferri, A., E-mail: alberto.tagliaferri@polimi.it [CNISM-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Nicotra, G. [IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy); Bollani, M. [CNR-IFN, LNESS, Via Anzani 42, I-22100 Como (Italy); Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F. [Dipartimento di Scienza dei Materiali and L-NESS, Università Milano-Bicocca, via Cozzi 53, I-20125 Milano (Italy); Capellini, G. [Department of Sciences at the Università Roma Tre, Via Vasca Navale 79, 00146 Roma (Italy); Isella, G. [CNISM, LNESS, Dipartimento di Fisica, Politecnico di Milano (Polo di Como), Via Anzani 42, I-22100 Como (Italy); Osmond, J. [ICFO–The Institute of Photonic Sciences, Av. Carl Friedrich Gauss, 3, E-08860 Castelldefels (Barcelona) (Spain)

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  19. Atomistic simulations of thermal transport in Si and SiGe based materials: From bulk to nanostructures

    Science.gov (United States)

    Savic, Ivana; Mingo, Natalio; Donadio, Davide; Galli, Giulia

    2010-03-01

    It has been recently proposed that Si and SiGe based nanostructured materials may exhibit low thermal conductivity and overall promising properties for thermoelectric applications. Hence there is a considerable interest in developing accurate theoretical and computational methods which can help interpret recent measurements, identify the physical origin of the reduced thermal conductivity, as well as shed light on the interplay between disorder and nanostructuring in determining a high figure of merit. In this work, we investigate the capability of an atomistic Green's function method [1] to describe phonon transport in several types of Si and SiGe based systems: amorphous Si, SiGe alloys, planar and nanodot Si/SiGe multilayers. We compare our results with experimental data [2,3], and with the findings of molecular dynamics simulations and calculations based on the Boltzmann transport equation. [1] I. Savic, N. Mingo, and D. A. Stewart, Phys. Rev. Lett. 101, 165502 (2008). [2] S.-M. Lee, D. G. Cahill, and R. Venkatasubramanian, Appl. Phys. Lett. 70, 2957 (1997). [3] G. Pernot et al., submitted.

  20. Properties of laser-crystallized polycrystalline SiGe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Weizman, Moshe

    2008-06-06

    In this thesis, structural, electrical, and optical properties of laser-crystallized polycrystalline Si{sub 1-x}Ge{sub x} thin films with 0SiGe samples that are exposed to a single laser pulse exhibit a ripple structure that evolves into a hillock structure when the samples are irradiated with additional laser pulses. - It is maintained that the main mechanism behind the structure formation is an instability of the propagating solid-liquid interface during solidification. - The study of defects with electron spin resonance showed that laser-crystallized poly-Si{sub 1-x}Ge{sub x} thin films with 0SiGe films was lower and amounted to N{sub s}=7 x 10{sup 17} cm{sup -3}. - Germanium-rich laser-crystallized poly-SiGe thin films exhibited mostly a broad atypical electric dipole spin resonance (EDSR) signal that was accompanied by a nearly temperature-independent electrical conductivity in the range 20-100 K. - Most likely, the origin of the grain boundary conductance is due to dangling-bond defects and not impurities. Metallic-like conductance occurs when the dangling-bond defect density is above a critical value of about N{sub C} {approx} 10{sup 18} cm{sup -3}. - Laser crystallized poly-Si{sub 1-x}Ge{sub x} thin films with x{>=}0.5 exhibit optical absorption behavior that is characteristic for disordered SiGe, implying that the absorption occurs primarily at the grain boundaries. A sub-band-gap absorption peak was found for

  1. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

    Science.gov (United States)

    Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

    2015-11-06

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  2. Suspended mid-infrared fiber-to-chip grating couplers for SiGe waveguides

    Science.gov (United States)

    Favreau, Julien; Durantin, Cédric; Fédéli, Jean-Marc; Boutami, Salim; Duan, Guang-Hua

    2016-03-01

    Silicon photonics has taken great importance owing to the applications in optical communications, ranging from short reach to long haul. Originally dedicated to telecom wavelengths, silicon photonics is heading toward circuits handling with a broader spectrum, especially in the short and mid-infrared (MIR) range. This trend is due to potential applications in chemical sensing, spectroscopy and defense in the 2-10 μm range. We previously reported the development of a MIR photonic platform based on buried SiGe/Si waveguide with propagation losses between 1 and 2 dB/cm. However the low index contrast of the platform makes the design of efficient grating couplers very challenging. In order to achieve a high fiber-to-chip efficiency, we propose a novel grating coupler structure, in which the grating is locally suspended in air. The grating has been designed with a FDTD software. To achieve high efficiency, suspended structure thicknesses have been jointly optimized with the grating parameters, namely the fill factor, the period and the grating etch depth. Using the Efficient Global Optimization (EGO) method we obtained a configuration where the fiber-to-waveguide efficiency is above 57 %. Moreover the optical transition between the suspended and the buried SiGe waveguide has been carefully designed by using an Eigenmode Expansion software. Transition efficiency as high as 86 % is achieved.

  3. Diffusion Mechanisms and Lattice Locations of Thermal-Equilibrium Defects in Si-Ge Alloys

    CERN Multimedia

    Lyutovich, K; Touboltsev, V; Laitinen, P O; Strohm, A

    2002-01-01

    It is generally accepted that Ge and Si differ considerably with respect to intrinsic-point-defect-mediated diffusion. In Ge, the native point defects dominating under thermal-equilibium conditions at all solid-state temperatures accessible in diffusion experiments are vacancies, and therefore Ge self-diffusion is vacancy-controlled. In Si, by contrast, self-interstitials and vacancies co-exist in thermal equilibrium. Whereas in the most thoroughly investigated temperature regime above about 1000$^\\circ$C Si self-diffusion is self-interstitial-controlled, it is vacancy-controlled at lower temperatures. According to the scenario displayed above, self-diffusion in Si-Ge alloys is expected to change from an interstitialcy mechanism on the Si side to a vacancy mechanism on the Ge side. Therefore, $^{71}$Ge self-diffusion experiments in Si$_{1- \\it y}$Ge$_{\\it y}$ as a function of composition Y are highly interesting. In a first series of experiments the diffusion of Ge in 0.4 to 10 $\\mu$m thick, relaxed, low-disl...

  4. Thermal conductivity of nanocrystalline SiGe alloys using molecular dynamics simulations

    Science.gov (United States)

    Abs da Cruz, Carolina; Katcho, Nebil A.; Mingo, Natalio; Veiga, Roberto G. A.

    2013-10-01

    We have studied the effect of nanocrystalline microstructure on the thermal conductivity of SiGe alloys using molecular dynamics simulations. Nanograins are modeled using both the coincidence site lattice and the Voronoi tessellation methods, and the thermal conductivity is computed using the Green-Kubo formalism. We analyze the dependence of the thermal conductivity with temperature, grain size L, and misorientation angle. We find a power dependence of L1/4 of the thermal conductivity with the grain size, instead of the linear dependence shown by non-alloyed nanograined systems. This dependence can be derived analytically underlines the important role that disorder scattering plays even when the grains are of the order of a few nm. This is in contrast to non-alloyed systems, where phonon transport is governed mainly by the boundary scattering. The temperature dependence is weak, in agreement with experimental measurements. The effect of angle misorientation is also small, which stresses the main role played by the disorder scattering.

  5. Gas spectroscopy system with 245 GHz transmitter and receiver in SiGe BiCMOS

    Science.gov (United States)

    Schmalz, Klaus; Rothbart, Nick; Borngräber, Johannes; Yilmaz, Selahattin Berk; Kissinger, Dietmar; Hübers, Heinz-Wilhelm

    2017-02-01

    The implementation of an integrated mm-wave transmitter (TX) and receiver (RX) in SiGe BiCMOS or CMOS technology offers a path towards a compact and low-cost system for gas spectroscopy. Previously, we have demonstrated TXs and RXs for spectroscopy at 238 -252 GHz and 495 - 497 GHz using external phase-locked loops (PLLs) with signal generators for the reference frequency ramps. Here, we present a more compact system by using two external fractional-N PLLs allowing frequency ramps for the TX and RX, and for TX with superimposed frequency shift keying (FSK) or reference frequency modulation realized by a direct digital synthesizer (DDS) or an arbitrary waveform generator. The 1.9 m folded gas absorption cell, the vacuum pumps, as well as the TX and RX are placed on a portable breadboard with dimensions of 75 cm x 45 cm. The system performance is evaluated by high-resolution absorption spectra of gaseous methanol at 13 Pa for 241 - 242 GHz. The 2f (second harmonic) content of the absorption spectrum of the methanol was obtained by detecting the IF power of RX using a diode power sensor connected to a lock-in amplifier. The reference frequency modulation reveals a higher SNR (signal-noise-ratio) of 98 within 32 s acquisition compared to 66 for FSK. The setup allows for jumping to preselected frequency regions according to the spectral signature thus reducing the acquisition time by up to one order of magnitude.

  6. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    International Nuclear Information System (INIS)

    Cecchi, S.; Chrastina, D.; Frigerio, J.; Isella, G.; Gatti, E.; Guzzi, M.; Müller Gubler, E.; Paul, D. J.

    2014-01-01

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 μm thick Si 1−x Ge x buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 °C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si 1−x Ge x layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach

  7. Thermal transport in nanocrystalline Si and SiGe by ab initio based Monte Carlo simulation.

    Science.gov (United States)

    Yang, Lina; Minnich, Austin J

    2017-03-14

    Nanocrystalline thermoelectric materials based on Si have long been of interest because Si is earth-abundant, inexpensive, and non-toxic. However, a poor understanding of phonon grain boundary scattering and its effect on thermal conductivity has impeded efforts to improve the thermoelectric figure of merit. Here, we report an ab-initio based computational study of thermal transport in nanocrystalline Si-based materials using a variance-reduced Monte Carlo method with the full phonon dispersion and intrinsic lifetimes from first-principles as input. By fitting the transmission profile of grain boundaries, we obtain excellent agreement with experimental thermal conductivity of nanocrystalline Si [Wang et al. Nano Letters 11, 2206 (2011)]. Based on these calculations, we examine phonon transport in nanocrystalline SiGe alloys with ab-initio electron-phonon scattering rates. Our calculations show that low energy phonons still transport substantial amounts of heat in these materials, despite scattering by electron-phonon interactions, due to the high transmission of phonons at grain boundaries, and thus improvements in ZT are still possible by disrupting these modes. This work demonstrates the important insights into phonon transport that can be obtained using ab-initio based Monte Carlo simulations in complex nanostructured materials.

  8. SiGe HBT cryogenic preamplification for higher bandwidth donor spin read-out

    Science.gov (United States)

    Curry, Matthew; Carr, Stephen; Ten-Eyck, Greg; Wendt, Joel; Pluym, Tammy; Lilly, Michael; Carroll, Malcolm

    2014-03-01

    Single-shot read-out of a donor spin can be performed using the response of a single-electron-transistor (SET). This technique can produce relatively large changes in current, on the order of 1 (nA), to distinguish between the spin states. Despite the relatively large signal, the read-out time resolution has been limited to approximately 100 (kHz) of bandwidth because of noise. Cryogenic pre-amplification has been shown to extend the response of certain detection circuits to shorter time resolution and thus higher bandwidth. We examine a SiGe HBT circuit configuration for cryogenic preamplification, which has potential advantages over commonly used HEMT configurations. Here we present 4 (K) measurements of a circuit consisting of a Silicon-SET inline with a Heterojunction-Bipolar-Transistor (HBT). We compare the measured bandwidth with and without the HBT inline and find that at higher frequencies the signal-to-noise-ratio (SNR) with the HBT inline exceeds the SNR without the HBT inline. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. The work was supported by the Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  9. Homogeneous SiGe crystal growth in microgravity by the travelling liquidus-zone method

    International Nuclear Information System (INIS)

    Kinoshita, K; Arai, Y; Inatomi, Y; Sakata, K; Takayanagi, M; Yoda, S; Miyata, H; Tanaka, R; Sone, T; Yoshikawa, J; Kihara, T; Shibayama, H; Kubota, Y; Shimaoka, T; Warashina, Y

    2011-01-01

    Homogeneous SiGe crystal growth experiments will be performed on board the ISS 'Kibo' using a gradient heating furnace (GHF). A new crystal growth method invented for growing homogeneous mixed crystals named 'travelling liquidus-zone (TLZ) method' is evaluated by the growth of Si 0.5 Ge 0.5 crystals in space. We have already succeeded in growing homogeneous 2mm diameter Si 0.5 Ge 0.5 crystals on the ground but large diameter homogeneous crystals are difficult to be grown due to convection in a melt. In microgravity, larger diameter crystals can be grown with suppressing convection. Radial concentration profiles as well as axial profiles in microgravity grown crystals will be measured and will be compared with our two-dimensional TLZ growth model equation and compositional variation is analyzed. Results are beneficial for growing large diameter mixed crystals by the TLZ method on the ground. Here, we report on the principle of the TLZ method for homogeneous crystal growth, results of preparatory experiments on the ground and plan for microgravity experiments.

  10. LAPAS: A SiGe Front End Prototype for the Upgraded ATLAS LAr Calorimeter

    CERN Document Server

    Dressnandt, N; Rescia, S; Vernon, E

    2009-01-01

    We have designed and fabricated a very low noise preamplifier and shaper to replace the existing ATLAS Liquid Argon readout for use at the Large Hadron Collider upgrade (sLHC). IBM’s 8WL 130nm SiGe process was chosen for it’s radiation tolerance, low noise bipolar NPN devices, wide voltage rand and potential use in other sLHC detector subsystems. Although the requirements for the final design can not be set at this time, the prototype was designed to accommodate a 16 bit dynamic range. This was accomplished by using a single stage, low noise, wide dynamic range preamp followed by a dual range shaper. The low noise of the preamp is made possible by the low base spreading resistance of the Silicon Germanium NPN bipolar transistors. The relatively high voltage rating of the NPN transistors is exploited to allow a gain of 650V/A in the preamplifier which eases the input voltage noise requirement on the shaper. Each shaper stage is designed as a cascaded differential operational amplifier doublet with a common...

  11. LAPAS: A SiGe Front End Prototype for the Upgraded ATLAS LAr

    CERN Document Server

    Rescia, S; Newcomer, F M; Dressnandt, N

    2009-01-01

    We have designed and fabricated a very low noise preamplifier and shaper with a (RC)2 – CR response to replace the existing ATLAS Liquid Argon readout for use at SLHC. IBM’s 8WL 130nm SiGe process was chosen for its radiation tolerance wide voltage range and potential for use in other LHC detector subsystems. The required dynamic range of 15 bits is accomplished by utilization of a single stage, low noise, wide dynamic range preamp connected to a dual range shaper. The low noise of the preamp (~.01nA / √Hz) is achieved by utilizing the process Silicon Germanium bipolar transistors. The relatively high voltage rating of the npn transistors is exploited to allow a gain of 650V/A. With this gain the equivalent input voltage noise requirement on the shaper to about 2.2nV/ √Hz. Each shaper stage is designed as a cascaded differential op amp doublet with a common mode operating point regulated by an internal feedback loop. The shaper outputs are designed to be compatible with the 130nm CMOS ADC being develo...

  12. Thermal boundary resistance at Si/Ge interfaces by molecular dynamics simulation

    Directory of Open Access Journals (Sweden)

    Tianzhuo Zhan

    2015-04-01

    Full Text Available In this study, we investigated the temperature dependence and size effect of the thermal boundary resistance at Si/Ge interfaces by non-equilibrium molecular dynamics (MD simulations using the direct method with the Stillinger-Weber potential. The simulations were performed at four temperatures for two simulation cells of different sizes. The resulting thermal boundary resistance decreased with increasing temperature. The thermal boundary resistance was smaller for the large cell than for the small cell. Furthermore, the MD-predicted values were lower than the diffusion mismatch model (DMM-predicted values. The phonon density of states (DOS was calculated for all the cases to examine the underlying nature of the temperature dependence and size effect of thermal boundary resistance. We found that the phonon DOS was modified in the interface regions. The phonon DOS better matched between Si and Ge in the interface region than in the bulk region. Furthermore, in interface Si, the population of low-frequency phonons was found to increase with increasing temperature and cell size. We suggest that the increasing population of low-frequency phonons increased the phonon transmission coefficient at the interface, leading to the temperature dependence and size effect on thermal boundary resistance.

  13. Influence of irradiation on mechanical properties of Si-Ge alloys

    Energy Technology Data Exchange (ETDEWEB)

    Sichinava, Avtandil; Bokuchava, Guram; Chubinidze, Giorgi; Archuadze, Giorgi [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Gapishvili, Nodar [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Georgian Technical University, Tbilisi (Georgia)

    2017-07-15

    Impact of various irradiation (Ar and He ions, high energy electrons) on microhardness and indentation of monocrystalline Si{sub 0,98}Ge{sub 0,02} alloy is studied. Samples of Si and SiGe alloy are obtained by Czochralski (CZ) method in the [111] direction in the atmosphere of high purity Ar. High energy electron irradiation with fluence of ∝10{sup 12} cm{sup -2} is conducted at the Clinac 2100iX. Ar and He ion implantation is performed on modernized ''VEZUVI-3M'' plant. It is shown that for all types of irradiation the microhardness and indentation modulus versus load are characterized by reverse indentation size effect (ISE). With the increase of fluences of Ar and He ions, the maximum value of the effect increases. At high values of loading force impact on the indenter the mechanical characteristics slowly decrease. Impact of isochronous thermal annealing on mechanical properties of high energy electron irradiated samples is studied. Non-monotonic changes of microhardness and indentation modulus are revealed in the temperature range of 200-260 C. It is proposed that such changes are caused by radiation defects transformation. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Practice guidelines on the use of esophageal manometry - A GISMAD-SIGE-AIGO medical position statement.

    Science.gov (United States)

    Savarino, Edoardo; de Bortoli, Nicola; Bellini, Massimo; Galeazzi, Francesca; Ribolsi, Mentore; Salvador, Renato; Savarino, Vincenzo; Penagini, Roberto

    2016-10-01

    Patients with esophageal symptoms potentially associated to esophageal motor disorders such as dysphagia, chest pain, heartburn and regurgitation, represent one of the most frequent reasons for referral to gastroenterological evaluation. The utility of esophageal manometry in clinical practice is: (1) to accurately define esophageal motor function, (2) to identify abnormal motor function, and (3) to establish a treatment plan based on motor abnormalities. With this in mind, in the last decade, investigations and technical advances, with the introduction of high-resolution esophageal manometry, have enhanced our understanding and management of esophageal motility disorders. The following recommendations were developed to assist physicians in the appropriate use of esophageal manometry in modern patient care. They were discussed and approved after a comprehensive review of the medical literature pertaining to manometric techniques and their recent application. This position statement created under the auspices of the Gruppo Italiano di Studio per la Motilità dell'Apparato Digerente (GISMAD), Società Italiana di Gastroenterologia ed Endoscopia Digestiva (SIGE) and Associazione Italiana Gastroenterologi ed Endoscopisti Digestivi Ospedalieri (AIGO) is intended to help clinicians in applying manometric studies in the most fruitful manner within the context of their patients with esophageal symptoms. Copyright © 2016 Editrice Gastroenterologica Italiana S.r.l. Published by Elsevier Ltd. All rights reserved.

  15. Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

    International Nuclear Information System (INIS)

    Chen Liang; Zhang Wan-Rong; Jin Dong-Yue; Shen Pei; Xie Hong-Yun; Ding Chun-Bao; Xiao Ying; Sun Bo-Tao; Wang Ren-Qing

    2011-01-01

    A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions. (interdisciplinary physics and related areas of science and technology)

  16. PNP2 calculus programme for interpretation of the experimental data by pulsed source neutrons methods. (Pt. 1). [Fortran IV for ICT 1900

    Energy Technology Data Exchange (ETDEWEB)

    Fratiloiu, C; Cristea, Gh

    1975-01-01

    PNP2 is a calculation programme destined to the interpretation of the experimental data by the pulsed source neutrons method on multiplyer environments into critic or subcritic state, populated with thermal neutrons. The programme is elaborate in the FORTRAN IV language of the ICT 1900 computer. The variation form in time of the thermal neutrons population for the multiplyer environments as a result of this whipping to the moments t=KT, with pockets of neutrons, appearing in the simplified theory of the pulsed source neutrons method. By this process are determinated the quantities Nsub(..cap alpha..), ..cap alpha.., Nsub(r) and B as well as empiric variants which affect these magnitudes. With these quantities is calculated the reactivity in relative units.

  17. Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

    International Nuclear Information System (INIS)

    RodrIguez, A; Ortiz, M I; Sangrador, J; RodrIguez, T; Avella, M; Prieto, A C; Torres, A; Jimenez, J; Kling, A; Ballesteros, C

    2007-01-01

    The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer

  18. Alternative Sigma Factors SigF, SigE, and SigG Are Essential for Sporulation in Clostridium botulinum ATCC 3502

    OpenAIRE

    Kirk, David G.; Zhang, Zhen; Korkeala, Hannu; Lindström, Miia

    2014-01-01

    Clostridium botulinum produces heat-resistant endospores that may germinate and outgrow into neurotoxic cultures in foods. Sporulation is regulated by the transcription factor Spo0A and the alternative sigma factors SigF, SigE, SigG, and SigK in most spore formers studied to date. We constructed mutants of sigF, sigE, and sigG in C. botulinum ATCC 3502 and used quantitative reverse transcriptase PCR and electron microscopy to assess their expression of the sporulation pathway on transcription...

  19. A SiGe High Gain and Highly Linear F-Band Single-Balanced Subharmonic Mixer

    OpenAIRE

    Seyedhosseinzadeh, Neda; Nabavi, Abdolreza; Carpenter, Sona; He, Zhongxia Simon; Bao, Mingquan; Zirath, Herbert

    2017-01-01

    A compact, broadband, high gain, second-order active down-converter subharmonic mixer is demonstrated using a 130-nm SiGe BiCMOS technology. The mixer adopts a bottom-LO Gilbert topology, on-chip RF and LO baluns and two emitter-follower buffers to realize a high gain wideband operation in both RF and IF frequencies. The measured performance exhibits a flat conversion gain (CG) of about 11 dB from 90 to 130 GHz with an average LO power of +3 dBm and high 2LO-RF isolation better than 60 dB. Th...

  20. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    Energy Technology Data Exchange (ETDEWEB)

    Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: rad@kth.se; Kolahdouz, M.; Ghandi, R.; Ostling, M. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-12-05

    This work presents the selective epitaxial growth (SEG) of Si{sub 1-x}Ge{sub x} (x = 0.15-0.315) layers with high amount of boron (1 x 10{sup 20}-1 x 10{sup 21} cm{sup -3}) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.

  1. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    International Nuclear Information System (INIS)

    Radamson, H.H.; Kolahdouz, M.; Ghandi, R.; Ostling, M.

    2008-01-01

    This work presents the selective epitaxial growth (SEG) of Si 1-x Ge x (x = 0.15-0.315) layers with high amount of boron (1 x 10 20 -1 x 10 21 cm -3 ) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers

  2. Band structure of Si/Ge core-shell nanowires along the [110] direction modulated by external uniaxial strain

    International Nuclear Information System (INIS)

    Peng Xihong; Tang Fu; Logan, Paul

    2011-01-01

    Strain modulated electronic properties of Si/Ge core-shell nanowires along the [110] direction were reported, on the basis of first principles density-functional theory calculations. In particular, the energy dispersion relationship of the conduction/valence band was explored in detail. At the Γ point, the energy levels of both bands are significantly altered by applied uniaxial strain, which results in an evident change of the band gap. In contrast, for the K vectors far away from Γ, the variation of the conduction/valence band with strain is much reduced. In addition, with a sufficient tensile strain (∼1%), the valence band edge shifts away from Γ, which indicates that the band gap of the Si/Ge core-shell nanowires experiences a transition from direct to indirect. Our studies further showed that effective masses of charge carriers can also be tuned using the external uniaxial strain. The effective mass of the hole increases dramatically with tensile strain, while strain shows a minimal effect on tuning the effective mass of the electron. Finally, the relation between strain and the conduction/valence band edge is discussed thoroughly in terms of site-projected wavefunction characters.

  3. Self-Passivation by Fluorine Plasma Treatment and Low-Temperature Annealing in SiGe Nano wires for Biochemical Sensors

    International Nuclear Information System (INIS)

    Chang, K.; Chen, C.; Kuo, P.; Chen, Y.; Chang, T.; Lai, C.; Whang, A. J.; Lai, Y.; Chen, H.; Hsieh, I.

    2014-01-01

    Nano wires are widely used as highly sensitive sensors for electrical detection of biological and chemical species. Modifying the band structure of strained-Si metal-oxide-semiconductor field-effect transistors by applying the in-plane tensile strain reportedly improves electron and hole mobility. The oxidation-induced Ge condensation increases the Ge fraction in a SiGe-on-insulator (SGOI) and substantially increases hole mobility. However, oxidation increases the number of surface states, resulting in hole mobility degradation. In this work, 3-aminopropyltrimethoxysilane (APTMS) was used as a biochemical reagent. The hydroxyl molecule on the oxide surface was replaced by the methoxy groups of the APTMS molecule. We proposed a surface plasma treatment to improve the electrical properties of SiGe nano wires. Fluorine plasma treatment can result in enhanced rates of thermal oxidation and speed up the formation of a self-passivation oxide layer. Like a capping oxide layer, the self-passivation oxide layer reduces the rate of follow-up oxidation. Pre oxidation treatment also improved the sensitivity of SiGe nano wires because the Si-F binding was held at a more stable interface state compared to bare nano wire on the SiGe surface. Additionally, the sensitivity can be further improved by either the N 2 plasma posttreatment or the low-temperature post annealing due to the suppression of out diffusion of Ge and F atoms from the SiGe nano wire surface.

  4. Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers

    NARCIS (Netherlands)

    Bruce, S.P.O.; Vandamme, L.K.J.; Rydberg, A.

    1999-01-01

    Transimpedance amplifiers have been used for direct study of current noise in silicon germanium (SiGe) heterojunction bipolar transistors (HBT's) at different biasing conditions. This has facilitated a wider range of resistances in the measurement circuit around the transistor than is possible when

  5. Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation

    Science.gov (United States)

    Rozé, Fabien; Gourhant, Olivier; Blanquet, Elisabeth; Bertin, François; Juhel, Marc; Abbate, Francesco; Pribat, Clément; Duru, Romain

    2017-06-01

    The fabrication of ultrathin compressively strained SiGe-On-Insulator layers by the condensation technique is likely a key milestone towards low-power and high performances FD-SOI logic devices. However, the SiGe condensation technique still requires challenges to be solved for an optimized use in an industrial environment. SiGe oxidation kinetics, upon which the condensation technique is founded, has still not reached a consensus in spite of various studies which gave insights into the matter. This paper aims to bridge the gaps between these studies by covering various oxidation processes relevant to today's technological needs with a new and quantitative analysis methodology. We thus address oxidation kinetics of SiGe with three Ge concentrations (0%, 10%, and 30%) by means of dry rapid thermal oxidation, in-situ steam generation oxidation, and dry furnace oxidation. Oxide thicknesses in the 50 Å to 150 Å range grown with oxidation temperatures between 850 and 1100 °C were targeted. The present work shows first that for all investigated processes, oxidation follows a parabolic regime even for thin oxides, which indicates a diffusion-limited oxidation regime. We also observe that, for all investigated processes, the SiGe oxidation rate is systematically higher than that of Si. The amplitude of the variation of oxidation kinetics of SiGe with respect to Si is found to be strongly dependent on the process type. Second, a new quantitative analysis methodology of oxidation kinetics is introduced. This methodology allows us to highlight the dependence of oxidation kinetics on the Ge concentration at the oxidation interface, which is modulated by the pile-up mechanism. Our results show that the oxidation rate increases with the Ge concentration at the oxidation interface.

  6. On-line monitoring of base current and forward emitter current gain of the voltage regulator's serial pnp transistor in a radiation environment

    Directory of Open Access Journals (Sweden)

    Vukić Vladimir Đ.

    2012-01-01

    Full Text Available A method of on-line monitoring of the low-dropout voltage regulator's operation in a radiation environment is developed in this paper. The method had to enable detection of the circuit's degradation during exploitation, without terminating its operation in an ionizing radiation field. Moreover, it had to enable automatic measurement and data collection, as well as the detection of any considerable degradation, well before the monitored voltage regulator's malfunction. The principal parameters of the voltage regulator's operation that were monitored were the serial pnp transistor's base current and the forward emitter current gain. These parameters were procured indirectly, from the data on the voltage regulator's load and quiescent currents. Since the internal consumption current in moderately and heavily loaded devices was used, the quiescent current of a negligibly loaded voltage regulator of the same type served as a reference. Results acquired by on-line monitoring demonstrated marked agreement with the results acquired from examinations of the voltage regulator's maximum output current and minimum dropout voltage in a radiation environment. The results were particularly consistent in tests with heavily loaded devices. Results obtained for moderately loaded voltage regulators and the risks accompanying the application of the presented method, were also analyzed.

  7. Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires.

    Science.gov (United States)

    Das, Suvankar; Moitra, Amitava; Bhattacharya, Mishreyee; Dutta, Amlan

    2015-01-01

    The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young's modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on the nanowires. In addition, the thermally induced stress is perceived in the context of buckling instability. The analysis provides a trade-off between the geometrical and operational parameters of the nanostructures. The proposed methodology can be extended to other materials and structures and helps with the prediction of the conditions under which a nanowire-based device might possibly fail due to elastic instability.

  8. Reduction in the formation temperature of Poly-SiGe alloy thin film in Si/Ge system

    Science.gov (United States)

    Tah, Twisha; Singh, Ch. Kishan; Madapu, K. K.; Sarguna, R. M.; Magudapathy, P.; Ilango, S.

    2018-04-01

    The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ˜ 500 °C leading to the formation of a-SiGe. Subsequently, poly-SiGe alloy phase could formonly at temperature ≥ 800 °C. Whereas, for the set of samples deposited at 500 °C, in-situ formation of poly-SiGe alloy thin film could be observed. The energetics of the incoming evaporated atoms and theirsubsequent diffusionsin the presence of the supplied thermal energy is discussed to understand possible reasons for lowering of formation temperature/energyof the poly-SiGe phase.

  9. The enhancement of the interdiffusion in Si/Ge amorphous artificial multilayers by additions of B and Au

    International Nuclear Information System (INIS)

    Park, B.; Spaepen, F.; Poate, J.M.; Jacobson, D.C.

    1990-01-01

    Amorphous Si/amorphous Ge artificial multilayers were prepared by ion beam sputtering. Boron or gold impurities were introduced into the Si/Ge multilayers by ion implantation or during the sputtering deposition. Diffusion coefficients were determined by measuring the decrease in the intensity of the first order X-ray diffraction peak resulting from the composition modulation. It was found that the interdiffusion of Si and Ge in their amorphous phase can be enhanced by doping. The enhancement factor is independent of the degree of structural relaxation, as observed by the decrease of diffusivity with annealing time, of the amorphous phase. A model is proposed that describes this behavior in terms of electronic effects, introduced by the dopants, on the pre-existing structural defects governing diffusion

  10. Silicon transport under rotating and combined magnetic fields in liquid phase diffusion growth of SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Armour, N.; Dost, S. [Crystal Growth Laboratory, University of Victoria, Victoria, BC, V8W 3P6 (Canada)

    2010-04-15

    The effect of applied rotating and combined (rotating and static) magnetic fields on silicon transport during the liquid phase diffusion growth of SiGe was experimentally studied. 72-hour growth periods produced some single crystal sections. Single and polycrystalline sections of the processed samples were examined for silicon composition. Results show that the application of a rotating magnetic field enhances silicon transport in the melt. It also has a slight positive effect on flattening the initial growth interface. For comparison, growth experiments were also conducted under combined (rotating and static) magnetic fields. The processed samples revealed that the addition of static field altered the thermal characteristics of the system significantly and led to a complete melt back of the germanium seed. Silicon transport in the melt was also enhanced under combined fields compared with experiments with no magnetic field. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Effect of a static magnetic field on silicon transport in liquid phase diffusion growth of SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Armour, N.; Dost, S. [Crystal Growth Laboratory, University of Victoria, Victoria, BC V8W 3P6 (Canada)

    2010-03-15

    Liquid phase diffusion experiments have been performed without and with the application of a 0.4 T static magnetic field using a three-zone DC furnace system. SiGe crystals were grown from the germanium side for a period of 72 h. Experiments have led to the growth of single crystal sections varying from 0 to 10 mm thicknesses. Examination of the processed samples (single and polycrystalline sections) has shown that the effect of the applied static magnetic field is significant. It alters the temperature distribution in the system, reduces mass transport in the melt, and leads to a much lower growth rate. The initial curved growth interface was slightly flattened under the effect of magnetic field. There were no growth striations in the single crystal sections of the samples. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Simulating characteristics of Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer

    Directory of Open Access Journals (Sweden)

    Gnilenko A. B.

    2015-12-01

    Full Text Available In spite of many efforts to propose new semiconductor materials and sophisticated constructions of solar cells, crystalline silicone remains the main photovoltaic material widely used up to now. There are various methods to enhance the efficiency of silicone solar cells. One of them is to combine silicone with an additional semiconductor material with the different bandgap to form a tandem construction. For example, the germanium sub-cell used as the bottom cascade for the silicone sub-cell in the tandem monolithic solar cell makes it possible to utilize the "red" sub-band of solar spectra increasing overall solar cell efficiency. The problem of the 4.2% mismatch in lattice constant between Si and Ge can be resolved in such a case by the use of SiGe buffer layer. In the paper the results of the computer simulation for Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer are presented. In the solar cell under consideration, the step graded Si1-xGex buffer layer is located between the top silicone and the bottom germanium cascades to reduce the threading dislocation density in mismatched materials. The cascades are commutated by the use of the germanium tunnel diode between the bottom sub-cell and the buffer layer. For the solar cell modeling, the physically-based device simulator ATLAS of Silvaco TCAD software is employed to predict the electrical behavior of the semiconductor structure and to provide a deep insight into the internal physical processes. The voltage-current characteristic, photovoltaic parameters and the distribution of basic physical values are obtained for the investigated tandem solar cell. The influence of layer thicknesses on the photovoltaic parameters is studied. The calculated efficiency of the tandem solar cell reaches 13% which is a quarter more than the efficiency of a simple silicone solar cell with the same constructive parameters and under the same illumination conditions.

  13. Investigation of high mobility pseudomorphic SiGe p-channels in Si MOSFETS at low and high electric fields

    International Nuclear Information System (INIS)

    Palmer, Martin John

    2001-01-01

    Silicon Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) for high speed, high current applications are rapidly approaching the physical and financial limits of the technology. This opens opportunities for the incorporation of materials with intrinsically better transport characteristics. An alloy of silicon and germanium is one such material that is gaining much recognition as the active component of MOSFETs and as the secondary structures (such as the gate electrode). This work examines a batch of buried channel Si 0.64 Ge 0.36 p-MOSFETs, with a minimum effective length of 0.35 μm, under different bias conditions and at different temperatures. High current and transconductance enhancements are apparent at long gate lengths. The carrier mobility is up to a factor of 2.5 times that of silicon at room temperature and 7.5 times at 4 K. A clear trend of decreasing peak mobility with decreasing silicon cap thickness is evident. Simulations show that scattering caused by the roughness of the SiO 2 /Si interface dominates, rather than alloy scattering or Si/SiGe roughness, even for a buried channel. This scattering increases with the proximity of the carriers to the interface. An increase of interface trap density with decreasing cap thickness, demonstrates that segregated germanium exists some distance into the cap and interferes with the oxidation process. This will increase scattering through increased SiO 2 /Si roughness and increased trapped charge. The short channel, high field results are comparable or slightly worse than those of silicon due to lower saturation drift velocity. However, fitting to a drift-diffusion model shows an apparent increase in saturation velocity for short channels, especially at low temperatures. This effect correlates with the low field mobility and is greater for devices containing SiGe. This is an indication of velocity overshoot, which may enhance the performance of SiGe MOSFETs at deep submicron gate lengths. (author)

  14. Sulfur passivation for the formation of Si-terminated Al{sub 2}O{sub 3/}SiGe(0 0 1) interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, CA (United States); Tang, Kechao [Department of Materials Science and Engineering, Stanford University, CA (United States); Park, Sangwook; Kim, Hyonwoong [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Madisetti, Shailesh [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, CA (United States); Oktyabrsky, Serge [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES USA, Inc., Albany, NY (United States); Yoshida, Noami; Kachian, Jessica [Applied Materials, Inc., Santa Clara, CA (United States); Kummel, Andrew, E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States)

    2016-03-15

    Graphical abstract: - Highlights: • Effect of wet sulfur passivation on the electrical properties of Al{sub 2}O{sub 3}/SiGe(0 0 1) interfaces has been determined. • EOT of 2.1 nm has been achieved for ALD Al{sub 2}O{sub 3} deposited directly on SiGe(0 0 1) surfaces. • Sulfur passivation has been found to passivate the Al{sub 2}O{sub 3} interface with Si−O−Al bonds. • Sulfur passivation is found to significantly reduce the GeO{sub x} or Ge−O−Al content at the Al{sub 2}O{sub 3}/SiGe interface therefore improving the reliability. • Sulfur passivation extends the surface stability prior to oxide ALD to up to an hour with no dramatic change in D{sub it}, C{sub ox} or V{sub FB} of the resulting devices. - Abstract: Sulfur passivation is used to electrically and chemically passivate the silicon–germanium (SiGe) surfaces before and during the atomic layer deposition (ALD) of aluminum oxide (Al{sub 2}O{sub 3}). The electrical properties of the interfaces were examined by variable frequency capacitance–voltage (C–V) spectroscopy. Interface compositions were determined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The sulfur adsorbs to a large fraction of surface sites on the SiGe(0 0 1) surface, protecting the surface from deleterious surface reactions during processing. Sulfur passivation (a) improved the air stability of the cleaned surfaces prior to ALD, (b) increased the stability of the surface during high-temperature deposition, and (c) increased the Al{sub 2}O{sub 3} ALD nucleation density on SiGe, thereby lowering the leakage current. S passivation suppressed formation of Ge−O bonds at the interface, leaving the majority of the Al{sub 2}O{sub 3}–SiGe interface terminated with direct Si−O−Al bonding.

  15. Capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator

    International Nuclear Information System (INIS)

    Kim, Tae-Hyun; Park, Jea-Gun

    2013-01-01

    We investigated the combined effect of the strained Si channel and hole confinement on the memory margin enhancement for a capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator (ε-Si SGOI). The memory margin for the ε-Si SGOI capacitor-less memory cell was higher than that of the memory cell fabricated on an unstrained Si-on-insulator (SOI) and increased with increasing Ge concentration of the relaxed SiGe layer; i.e. the memory margin for the ε-Si SGOI capacitor-less memory cell (138.6 µA) at a 32 at% Ge concentration was 3.3 times higher than the SOI capacitor-less memory cell (43 µA). (paper)

  16. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

    Energy Technology Data Exchange (ETDEWEB)

    Baidakova, N. A., E-mail: banatale@ipmras.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [University of Nizhny Novgorod (Russian Federation); Drozdov, M. N.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [University of Nizhny Novgorod (Russian Federation); Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2015-08-15

    The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.

  17. The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars.

    Science.gov (United States)

    Zaumseil, P; Kozlowski, G; Schubert, M A; Yamamoto, Y; Bauer, J; Schülli, T U; Tillack, B; Schroeder, T

    2012-09-07

    We study the growth and relaxation processes of Ge nano-clusters selectively grown by chemical vapor deposition on free-standing 90 nm wide Si(001) nano-pillars with a thin Si(0.23)Ge(0.77) buffer layer. We found that the dome-shaped SiGe layer with a height of about 28 nm as well as the Ge dot deposited on top of it partially relaxes, mainly by elastic lattice bending. The Si nano-pillar shows a clear compliance behavior-an elastic response of the substrate on the growing film-with the tensile strained top part of the pillar. Additional annealing at 800 °C leads to the generation of misfit dislocation and reduces the compliance effect significantly. This example demonstrates that despite the compressive strain generated due to the surrounding SiO(2) growth mask it is possible to realize an overall tensile strain in the Si nano-pillar and following a compliant substrate effect by using a SiGe buffer layer. We further show that the SiGe buffer is able to improve the structural quality of the Ge nano-dot.

  18. Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2

    International Nuclear Information System (INIS)

    Avella, M.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.; Ortiz, M.I.; Ballesteros, C.

    2008-01-01

    Multilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by low-pressure chemical vapor deposition of SiGe and SiO 2 onto Si wafers (in a single run at 390 deg. C and 50 mTorr, using GeH 4 , Si 2 H 6 and O 2 ) followed by a rapid thermal annealing treatment to crystallize the SiGe nanoparticles. The main emission band is located at 400 nm in both cathodoluminescence and photoluminescence experiments at 80 K and also at room temperature. The annealing conditions (temperatures ranging from 700 to 1000 deg. C and for times of 30 and 60 s) have been investigated in samples with different diameter of the nanoparticles (from ∼3 to ≥5 nm) and oxide interlayer thickness (15 and 35 nm) in order to establish a correlation between the crystallization of the nanoparticles, the degradation of their composition by Ge diffusion and the intensity of the luminescence emission band. Structures with small nanoparticles (3-4.5 nm) separated by thick oxide barriers (∼35 nm) annealed at 900 deg. C for 60 s yield the maximum intensity of the luminescence. An additional treatment at 450 deg. C in forming gas for dangling-bond passivation increases the intensity of the luminescence band by 25-30%

  19. Recent developments using TowerJazz SiGe BiCMOS platform for mmWave and THz applications

    Science.gov (United States)

    Kar-Roy, Arjun; Howard, David; Preisler, Edward J.; Racanelli, Marco

    2013-05-01

    In this paper, we report on the highest speed 240GHz/340GHz FT/FMAX NPN which is now available for product designs in the SBC18H4 process variant of TowerJazz's mature 0.18μm SBC18 silicon germanium (SiGe) BiCMOS technology platform. NFMIN of ~2dB at 50GHz has been obtained with these NPNs. We also describe the integration of earlier generation NPNs with FT/FMAX of 240GHz/280GHz into SBC13H3, a 0.13μm SiGe BiCMOS technology platform. Next, we detail the integration of the deep silicon via (DSV), through silicon via (TSV), high-resistivity substrate, sub-field stitching and hybrid-stitching capability into the 0.18μm SBC18 technology platform to enable higher performance and highly integrated product designs. The integration of SBC18H3 into a thick-film SOI substrate, with essentially unchanged FT and FMAX, is also described. We also report on recent circuit demonstrations using the SBC18H3 platform: (1) a 4-element phased-array 70-100GHz broadband transmit and receive chip with flat saturated power greater than 5dBm and conversion gain of 33dB; (2) a fully integrated W-band 9-element phase-controllable array with responsivity of 800MV/W and receiver NETD is 0.45K with 20ms integration time; (3) a 16-element 4x4 phased-array transmitter with scanning in both the E- and H-planes with maximum EIRP of 23-25 dBm at 100-110GHz; (4) a power efficient 200GHz VCO with -7.25dBm output power and tuning range of 3.5%; and (5) a 320GHz 16-element imaging receiver array with responsivity of 18KV/W at 315GHz, a 3dB bandwidth of 25GHz and a low NEP of 34pW/Hz1/2. Wafer-scale large-die implementation of the phased-arrays and mmWave imagers using stitching in TowerJazz SBC18 process are also discussed.

  20. Synthesis, characterization and biological evaluation of [{sup 188}Re(N)(cys{approx})(PNP)]{sup +/0} mixed-ligand complexes as prototypes for the development of {sup 188}Re(N)-based target-specific radiopharmaceuticals

    Energy Technology Data Exchange (ETDEWEB)

    Thieme, Stefan [Institute of Radiopharmacy, Forschungszentrum Dresden Rossendorf, P.O. Box 510 119, 01314 Dresden (Germany); Agostini, Stefania [Department of Pharmaceutical Sciences, University of Padua, Via Marzolo 5, 35131 Padova (Italy); Bergmann, Ralf; Pietzsch, Jens; Pietzsch, Hans-Juergen [Institute of Radiopharmacy, Forschungszentrum Dresden Rossendorf, P.O. Box 510 119, 01314 Dresden (Germany); Carta, Davide; Salvarese, Nicola [Department of Pharmaceutical Sciences, University of Padua, Via Marzolo 5, 35131 Padova (Italy); Refosco, Fiorenzo [ICIS-CNR, Corso Stati Uniti 4, 35127 Padova (Italy); Bolzati, Cristina, E-mail: bolzati@icis.cnr.i [Department of Pharmaceutical Sciences, University of Padua, Via Marzolo 5, 35131 Padova (Italy); ICIS-CNR, Corso Stati Uniti 4, 35127 Padova (Italy)

    2011-04-15

    We report on an efficient procedure for the preparation of [{sup 188}Re(N)(PNP)]-based complexes (where PNP is diphosphinoamine) useful in the development of target-specific radiopharmaceuticals. The radiochemical yield of the compounds was optimized considering such reaction parameters as nature of the nitrido nitrogen donor, reaction times and pH level. The chemical identity of the {sup 188}Re agents was determined by high-performance liquid chromatography comparison with the corresponding well-characterized cold Re compounds. {sup 188}Re(N) mixed compounds have been evaluated with regard to stability toward transchelation with GSH and degradation by serum enzymes. The clearance of selected radiocompounds from normal tissues and their in vivo stability were evaluated in rats by biodistribution and imaging studies. [{sup 188}Re(N)(cys{approx})(PNP)]{sup +/0} mixed-ligand compounds were efficiently prepared in aqueous solution from perrhenate using a multistep procedure based on the preliminary formation of the labile {sup 188}Re{sup III}-EDTA species, which easily undergo oxidation/ligand exchange reaction to afford the [{sup 188}Re{sup V{identical_to}}N]{sup 2+} core in the presence of dithiocarbazate. The final mixed-ligand compounds were obtained, at 100{sup o}C, by adding the two bidentate ligands to the buffered [{sup 188}Re{sup V{identical_to}}N]{sup 2+} solution (pH 3.2-3.6). However, a relatively high amount of cys{approx} ligand was required to obtain a quantitative radiochemical yield. The complexes were stable toward reoxidation to perrhenate and ligand exchange reactions. In vivo studies showed rapid distribution and elimination of the complexes from the body. No specific uptakes in sensitive tissues/organs were detected. A positive correlation of the distribution of the complexes estimated with biodistribution studies (%ID) and with micro-SPECT semiquantification imaging analysis (standard uptake values) was observed. These results support the

  1. Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

    International Nuclear Information System (INIS)

    Liu, Li-Jung; Chang-Liao, Kuei-Shu; Jian, Yi-Chuen; Wang, Tien-Ko; Tsai, Ming-Jinn

    2013-01-01

    P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 10 6 P/E cycles with 3.8 V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. - Highlights: ► A super-lattice structure is proposed to introduce more Ge content into channel. ► Super-lattice structure possesses low roughness and good crystal structure. ► P-channel flash devices with Si, SiGe, and super-lattice channel are investigated. ► Programming/erasing speeds are significantly improved. ► Reliability properties can be kept for device with super-lattice channel

  2. Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

    Science.gov (United States)

    Vandersande, Jan W.; Wood, Charles; Draper, Susan

    1987-01-01

    Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

  3. Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

    Directory of Open Access Journals (Sweden)

    Chao-Chun Wang

    2012-01-01

    Full Text Available The nanocrystalline silicon-germanium (nc-SiGe thin films were deposited by high-frequency (27.12 MHz plasma-enhanced chemical vapor deposition (HF-PECVD. The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

  4. High-aspect-ratio and high-flatness Cu3(SiGe) nanoplatelets prepared by chemical vapor deposition.

    Science.gov (United States)

    Klementová, Mariana; Palatinus, Lukás; Novotný, Filip; Fajgar, Radek; Subrt, Jan; Drínek, Vladislav

    2013-06-01

    Cu3(SiGe) nanoplatelets were synthesized by low-pressure chemical vapor deposition of a SiH3C2H5/Ge2(CH3)6 mixture on a Cu-substrate at 500 degrees C, total pressure of 110-115 Pa, and Ge/Si molar ratio of 22. The nanoplatelets with composition Cu76Si15Ge12 are formed by the 4'-phase, and they are flattened perpendicular to the [001] direction. Their lateral dimensions reach several tens of micrometers in size, but they are only about 50 nm thick. Their surface is extremely flat, with measured root mean square roughness R(q) below 0.2 nm. The nanoplatelets grow via the non-catalytic vapor-solid mechanism and surface growth. In addition, nanowires and nanorods of various Cu-Si-Ge alloys were also obtained depending on the experimental conditions. Morphology of the resulting Cu-Si-Ge nanoobjects is very sensitive to the experimental parameters. The formation of nanoplatelets is associated with increased amount of Ge in the alloy.

  5. Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy

    International Nuclear Information System (INIS)

    Tan, P.H.; Bougeard, D.; Abstreiter, G.; Brunner, K.

    2005-01-01

    We characterized strain and Ge content depending on depth in a self-assembled Si/Ge dot multilayer by scanning a microscopic Raman probe at a (110) cleavage plane. The multilayer structure was deposited by molecular-beam epitaxy on a (001) Si substrate and consisted of 80 periods, each of them composed by 25 nm Si spacers and 8 monolayer Ge forming laterally and vertically uncorrelated islands with a height of 2 nm and a lateral diameter of about 20 nm. An average biaxial strain of -3.5% within the core regions of islands is determined from the splitting of longitudinal and transversal optical Ge-Ge phonon modes observed in polarized Raman measurements. The absolute mode frequencies further enable analysis of a Ge content of 0.82. The analyzed strain and composition of islands are nearly independent from depths below the sample surface. This indicates well-controlled deposition parameters and negligible intermixing during deposition of subsequent layers. These Raman results are in agreement with x-ray diffraction data. Small, local Raman frequency shifts were observed and discussed with respect to partial elastic strain relaxation of the multilayer stack after cleavage, undefined Raman-scattering geometries at the sample edge, and local heating by the laser probe

  6. Measurement, modeling, and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout

    Science.gov (United States)

    England, Troy; Curry, Matthew; Carr, Steve; Swartzentruber, Brian; Lilly, Michael; Bishop, Nathan; Carrol, Malcolm

    2015-03-01

    Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance typical of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will discuss calibration data, as well as modeling and simulation of cryogenic silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) circuits connected to a silicon SET and operating at 4 K. We find a continuum of solutions from simple, single-HBT amplifiers to more complex, multi-HBT circuits suitable for integration, with varying noise levels and power vs. bandwidth tradeoffs. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  7. Amorphous-crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation

    International Nuclear Information System (INIS)

    D'Angelo, D.; Piro, A.M.; Mirabella, S.; Bongiorno, C.; Romano, L.; Terrasi, A.; Grimaldi, M.G.

    2007-01-01

    Transmission Electron Microscopy was combined with Time Resolved Reflectivity to study the amorphous-crystalline (a-c) interface evolution during Solid Phase Epitaxy Regrowth (SPER) of Si 0.83 Ge 0.17 films deposited on Si by Molecular Beam Epitaxy and amorphized with Ge + ion implantation. Starting from the Si/SiGe interface, a 20 nm thick layer regrows free of defects with the same SPER rate of pure Si. The remaining SiGe regrows with planar defects and dislocations, accompanied by a decrease of the SPER velocity. The sample was also studied after implantation with B or P. In these cases, the SPER rate raises following the doping concentration profile, but no difference in the defect-free layer thickness was observed compared to the un-implanted sample. On the other hand, B or P introduction reduces the a-c interface roughness, while B-P co-implantation produces roughness comparable to the un-implanted sample

  8. The effect of fluorine in low thermal budget polysilicon emitters for SiGe heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Schiz, F.J.W.

    1999-03-01

    results are explained by the different evolution of defects in as-deposited α-Si and p-Si. The application of fluorine in low thermal budget polysilicon emitters is demonstrated ill a novel self-aligned SiGe heterojunction bipolar transistor concept which is implemented using selective and non-selective epitaxy. The process has the advantage of layer growth ill a single epitaxy step, no growth interfaces in the depletion regions, and oxide isolation as all intrinsic part of the device structure. The device electrical results demonstrate the feasibility of the transistor concept. A detailed analysis of leakage currents is performed and a correlation made with cross-section TEM micrographs. It is shown that E/C leakage is due to punch through at the perimeter of the transistor where the SiGe base is thinner. E/B is explained by the penetration of the E/B depletion region into the extrinsic at the perimeter of the emitter. By directing the extrinsic base implant into single crystal material at the perimeter of the base, both leakage mechanisms can be avoided. (author)

  9. Effect of Si/Ge ratio on resistivity and thermopower in Gd{sub 5}Si{sub x}Ge{sub 4-x} magnetocaloric compounds

    Energy Technology Data Exchange (ETDEWEB)

    Raj Kumar, D.M. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Manivel Raja, M., E-mail: mraja@dmrl.drdo.i [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Prabahar, K.; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Poddar, Asok; Ranganathan, R. [Saha Institute of Nuclear Physics, Kolkata 700064 (India); Suresh, K.G. [Indian Institute of Technology Bombay, Mumbai 400076 (India)

    2011-07-15

    The effect of Si/Ge ratio on resistivity and thermopower behavior has been investigated in the magnetocaloric ferromagnetic Gd{sub 5}Si{sub x}Ge{sub 4-x} compounds with x=1.7-2.3. Microstructural studies reveal the presence of Gd{sub 5}(Si,Ge){sub 4}-matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The x=1.7 and 2.0 samples display the presence of a first order structural transition from orthorhombic to monoclinic phase followed by a magnetic transition of the monoclinic phase. The alloys with x=2.2 and 2.3 display only magnetic transitions of the orthorhombic phase. A low temperature feature apparent in the AC susceptibility and resistivity data below 100 K reflects an antiferromagnetic transition of secondary phase(s) present in these compounds. The resistivity behavior study correlates with microstructural studies. A large change in thermopower of -8 {mu}V/K was obtained at the magneto-structural transition for the x=2 compound. - Research highlights: Effect of Si/Ge ratio on microstructure, magneto-structural transitions, resistivity ({rho}) and thermopower S(T) behaviour has been investigated in Gd{sub 5}Si{sub x}Ge{sub 4-x} compounds with x=1.7, 2.0, 2.2 and 2.3. Microstructural studies reveal the presence of a Gd{sub 5}(Si,Ge){sub 4} -matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The resistivity behaviour has shown good correlation with the microstructural studies. A large change in thermopower of -8{mu}V/K was obtained at the magneto-structural transition for the x=2 compound. The resistivity and change in thermopower values were high for the alloys with Si/Ge ratio {<=}1 compared to that of the alloys with Si/Ge ratio >1.

  10. Capas de SiGe policristalino hidrogenado y su aplicación en transistores de película delgada

    Directory of Open Access Journals (Sweden)

    Rodríguez, A.

    2004-04-01

    Full Text Available The hydrogenation of polycrystalline SiGe layers, obtained by solid phase crystallization, by an electron ciclotron resonance hydrogen plasma and the influence of this hydrogenation process on the electrical characteristics of thin film transistors fabricated using this material as active layer have been studied. The hydrogenation processes were carried out at 150 and 250 ºC for several times, up to 11 hours. Infrared transmission spectra of these samples show only the absorption bands corresponding to Si-H bonds, indicating that hydrogen atoms are bonded mainly to silicon atoms. Ultraviolet reflectance measurements show that the surface damage caused by the plasma exposure increases as the Ge content of the film does. The transistors fabricated using polycrystalline SiGe films as active layer show a degradation phenomenon, consisting of a progressive decrease of the drain current at constant gate and drain bias. The degradation slows down as the hydrogenation time increases at constant temperature.

    En este trabajo se ha caracterizado el proceso de hidrogenación en un plasma generado por resonancia ciclotrónica de electrones de capas de SiGe policristalino obtenidas mediante cristalización en fase sólida y el efecto de la hidrogenación en las características eléctricas de transistores de película delgada fabricados usando dicho material. Los procesos de hidrogenación se realizaron a 150 y 250 ºC, con duraciones de hasta 11 horas. Los espectros de transmitancia en infrarrojo muestran solamente las bandas de absorción características de los enlaces Si-H. Estas bandas indican que el hidrógeno se incorpora al material enlazándose principalmente con los átomos de silicio. Las medidas de reflectancia en el ultravioleta indican que se crea daño en la superficie de la muestra y que éste aumenta a medida que lo hace el contenido en Ge. Los transistores de película delgada con capa activa de SiGe policristalino muestran un fen

  11. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    Science.gov (United States)

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  12. Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications

    Science.gov (United States)

    Kar-Roy, Arjun; Howard, David; Racanelli, Marco; Scott, Mike; Hurwitz, Paul; Zwingman, Robert; Chaudhry, Samir; Jordan, Scott

    2010-10-01

    Today's readout integrated-circuits (ROICs) require a high level of integration of high performance analog and low power digital logic. TowerJazz offers a commercial 0.18μm CMOS technology platform for mixed-signal, RF, and high performance analog applications which can be used for ROIC applications. The commercial CA18HD dual gate oxide 1.8V/3.3V and CA18HA dual gate oxide 1.8V/5V RF/mixed signal processes, consisting of six layers of metallization, have high density stacked linear MIM capacitors, high-value resistors, triple-well isolation and thick top aluminum metal. The CA18HA process also has scalable drain extended LDMOS devices, up to 40V Vds, for high-voltage sensor applications, and high-performance bipolars for low noise requirements in ROICs. Also discussed are the available features of the commercial SBC18 SiGe BiCMOS platform with SiGe NPNs operating up to 200/200GHz (fT/fMAX frequencies in manufacturing and demonstrated to 270 GHz fT, for reduced noise and integrated RF capabilities which could be used in ROICs. Implementation of these technologies in a thick film SOI process for integrated RF switch and power management and the availability of high fT vertical PNPs to enable complementary BiCMOS (CBiCMOS), for RF enabled ROICs, are also described in this paper.

  13. A Physics-Based Engineering Methodology for Calculating Soft Error Rates of Bulk CMOS and SiGe Heterojunction Bipolar Transistor Integrated Circuits

    Science.gov (United States)

    Fulkerson, David E.

    2010-02-01

    This paper describes a new methodology for characterizing the electrical behavior and soft error rate (SER) of CMOS and SiGe HBT integrated circuits that are struck by ions. A typical engineering design problem is to calculate the SER of a critical path that commonly includes several circuits such as an input buffer, several logic gates, logic storage, clock tree circuitry, and an output buffer. Using multiple 3D TCAD simulations to solve this problem is too costly and time-consuming for general engineering use. The new and simple methodology handles the problem with ease by simple SPICE simulations. The methodology accurately predicts the measured threshold linear energy transfer (LET) of a bulk CMOS SRAM. It solves for circuit currents and voltage spikes that are close to those predicted by expensive 3D TCAD simulations. It accurately predicts the measured event cross-section vs. LET curve of an experimental SiGe HBT flip-flop. The experimental cross section vs. frequency behavior and other subtle effects are also accurately predicted.

  14. $^{31}$Si Self-Diffusion in Si-Ge Alloys and Si-(B-)C-N Ceramics and Diffusion Studies for Al and Si Beam Developments

    CERN Multimedia

    Nylandsted larsen, A; Voss, T L; Strohm, A

    2002-01-01

    An invaluable method for studying diffusion in solids is the radiotracer technique. However, its applicability had been restricted to radiotracer atoms with half-lives $t_{1/2}$ of about 1~d or longer. Within the framework of IS372 a facility was developed in which short-lived radiotracer atoms ( 5min $\\scriptstyle{\\lesssim}$ $t_{1/2}\\scriptstyle{\\lesssim}$1 d ) can be used. For the implantation of the short-lived tracers the facility is flanged to the ISOLDE beamline, and all post-implantation steps required in the radiotracer technique are done in situ.\\\\ After successful application of this novel technique in diffusion studies of $^{11}$C ($t_{1/2}$ = 20.3 min), this experiment aims at performing self-diffusion studies of $^{31}$Si ($t_{1/2}$ = 2.6~h) in Si--Ge alloys and in amorphous Si--(B--)C--N ceramics.\\\\ Our motivation for measuring diffusion in Si--Ge alloys is their recent technological renaissance as well as the purpose to test the prediction that in these alloys the self-diffusion mechanism chang...

  15. Energy, fine structure, and hyperfine structure of the core-excited states 1s2s2pnp 5P (n = 2-5) and 1s2p2mp 5S (m = 2-5) for Li- ion

    International Nuclear Information System (INIS)

    Wang, Z.B.; Gou, B.C.; Chen, F.

    2006-01-01

    The relativistic energies, the oscillator strength, and the lifetimes of high-lying core-excited states 1s2s2pnp 5 P (n=2-5) and 1s2p 2 mp 5 S 0 (m=2-5) of Li - ion are calculated with the saddle-point variational method and restricted variation method. The fine structure and the hyperfine structure of the core-excited states for this system are also explored. The results are compared with other theoretical and experimental data in the literature. The energy obtained in this work are much lower than the others previously published whereas the wavelengths and radiative life-times are in agreement

  16. Influence of airborne pollen counts and length of pollen season of selected allergenic plants on the concentration of sIgE antibodies on the population of Bratislava, Slovakia

    Directory of Open Access Journals (Sweden)

    Jana Ščevková

    2015-09-01

    Full Text Available Introduction and objective. The association between airborne pollen counts or duration of pollen season and allergy symptoms is not always distinguished. The purpose of this study was to examine the correlation between pollen exposure (annual total pollen quantity and main pollen season length of selected allergenic plants in the atmosphere of Bratislava, and concentration of allergen-specific immunoglobulin E (sIgE in serum of patients with seasonal allergy during 2002–2003. Materials and methods. The concentration of pollen was monitored by a Burkard volumetric pollen trap. At the same time, 198 pollen allergic patients were testing to determine the values of sIgE antibodies against selected pollen allergens; a panel of 8 purified allergens was used. Results. The highest percentages of sensitization were detected for Poaceae and [i]Ambrosia[/i] pollen allergens. The most abundant airborne pollen types were Urticaceae, [i]Betula[/i], [i]Populus[/i], Fraxinus, Pinus and Poaceae. The length of the pollen season varied. The longest pollen season was that of the [i]Plantago[/i] – 105 days, and the shortest, [i]Corylus[/i] – 20 days. A significant correlation was found between annual total pollen quantity and median sIgE values, especially in 2002. Conclusions. A strong and significant positive correlation was observed between pollen counts, excluding [i]Betula[/i], and sIgE levels in both analysed years. The correlation was weaker and negative in the case of length of pollen season and sIgE values.

  17. Effect of high-temperature annealing on the microstructure and thermoelectric properties of GaP doped SiGe. M.S. Thesis

    Science.gov (United States)

    Draper, Susan L.

    1987-01-01

    Annealing of GaP doped SiGe will significantly alter the thermoelectric properties of the material resulting in increased performance as measured by the figure of merit Z and the power factor P. The microstructures and corresponding thermoelectric properties after annealing in the 1100 to 1300 C temperature range have been examined to correlate performance improvement with annealing history. The figure of merit and power factor were both improved by homogenizing the material and limiting the amount of cross-doping. Annealing at 1215 C for 100 hr resulted in the best combination of thermoelectric properties with a resultant figure of merit exceeding 1x10 to the -3 deg C to the -1 and a power factor of 44 microW/cm/deg C sq for the temperature range of interest for space power: 400 to 1000 C.

  18. Photonic metasurface made of array of lens-like SiGe Mie resonators formed on (100) Si substrate via dewetting

    Science.gov (United States)

    Poborchii, Vladimir; Shklyaev, Alexander; Bolotov, Leonid; Uchida, Noriyuki; Tada, Tetsuya; Utegulov, Zhandos N.

    2017-12-01

    Metasurfaces consisting of arrays of high-index Mie resonators concentrating/redirecting light are important for integrated optics, photodetectors, and solar cells. Herein, we report the optical properties of low-Ge-content SiGe lens-like Mie resonator island arrays fabricated via dewetting during Ge deposition on a Si(100) surface at approximately 900 °C. We observe enhancement of the Si interaction with light owing to the efficient island-induced light concentration in the submicron-depth Si layer, which is mediated by both near-field Mie resonance leaking into the substrate and far-field light focusing. Such metasurfaces can improve the Si photodetector and solar-cell performance.

  19. An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetector in standard SiGe BiCMOS technology.

    Science.gov (United States)

    Youn, Jin-Sung; Lee, Myung-Jae; Park, Kang-Yeob; Rücker, Holger; Choi, Woo-Young

    2012-12-17

    An optoelectronic integrated circuit (OEIC) receiver is realized with standard 0.25-μm SiGe BiCMOS technology for 850-nm optical interconnect applications. The OEIC receiver consists of a Si avalanche photodetector, a transimpedance amplifier with a DC-balanced buffer, a tunable equalizer, and a limiting amplifier. The fabricated OEIC receiver successfully detects 12.5-Gb/s 2(31)-1 pseudorandom bit sequence optical data with the bit-error rate less than 10(-12) at incident optical power of -7 dBm. The OEIC core has 1000 μm x 280 μm chip area, and consumes 59 mW from 2.5-V supply. To the best of our knowledge, this OEIC receiver achieves the highest data rate with the smallest sensitivity as well as the best power efficiency among integrated OEIC receivers fabricated with standard Si technology.

  20. Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35microm SiGe BiCMOS technology

    International Nuclear Information System (INIS)

    Niu, G.; Mathew, S.J.; Banerjee, G.; Cressler, J.D.; Clark, S.D.; Palmer, M.J.; Subbanna, S.

    1999-01-01

    The effects of gamma irradiation on the Shallow-Trench Isolation (STI) leakage currents in a SiGe BiCMOS technology are investigated for the first time, and shown to be strongly dependent on the irradiation gate bias and operating substrate bias. A positive irradiation gate bias significantly enhances the STI leakage, suggesting a strong field assisted nature of the charge buildup process in the STI. Numerical simulations also suggest the existence of fixed positive charges deep in the bulk along the STI/Si interface. A negative substrate bias, however, effectively suppresses the STI leakage, and can be used to eliminate the leakage produced by the charges deep in the bulk under irradiation

  1. PECVD Tekniği ile Büyütülmüş İnce Filmlerde Oluşan Ge ve SiGe Nanokristallerin Geçirgen Elektron Mikroskobu (TEM) ,Raman ve Fotoışıma Spektroskopisi Teknikleri ile İncelenmesi

    OpenAIRE

    Şahin, Bünyamin; Ağan, Sedat

    2009-01-01

    We report an experimental study, optical properties of Ge and SiGe nanocrystals in SiOx structures are investigated by using Transmission Electron Microscopy (TEM), Raman and Photlüminescence Spectroscopy techniques. Ge nanocrystals in silicon oxide thin films have been grown with different annealing time by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. The aim of our work is to determine size and size distiributions Ge, SiGe nanocrystals in SiOx martix due to annealing process...

  2. Synthesis and structural characterization of the ternary Zintl phases AE3Al2Pn4 and AE3Ga2Pn4 (AE=Ca, Sr, Ba, Eu; Pn=P, As)

    International Nuclear Information System (INIS)

    He, Hua; Tyson, Chauntae; Saito, Maia; Bobev, Svilen

    2012-01-01

    Ten new ternary phosphides and arsenides with empirical formulae AE 3 Al 2 Pn 4 and AE 3 Ga 2 Pn 4 (AE=Ca, Sr, Ba, Eu; Pn=P, As) have been synthesized using molten Ga, Al, and Pb fluxes. They have been structurally characterized by single-crystal and powder X-ray diffraction to form with two different structures—Ca 3 Al 2 P 4 , Sr 3 Al 2 As 4 , Eu 3 Al 2 P 4 , Eu 3 Al 2 As 4 , Ca 3 Ga 2 P 4 , Sr 3 Ga 2 P 4 , Sr 3 Ga 2 As 4 , and Eu 3 Ga 2 As 4 crystallize with the Ca 3 Al 2 As 4 structure type (space group C2/c, Z=4); Ba 3 Al 2 P 4 and Ba 3 Al 2 As 4 adopt the Na 3 Fe 2 S 4 structure type (space group Pnma, Z=4). The polyanions in both structures are made up of TrPn 4 tetrahedra, which share common corners and edges to form 2 ∞ [TrPn 2 ] 3– layers in the phases with the Ca 3 Al 2 As 4 structure, and 1 ∞ [TrPn 2 ] 3– chains in Ba 3 Al 2 P 4 and Ba 3 Al 2 As 4 with the Na 3 Fe 2 S 4 structure type. The valence electron count for all of these compounds follows the Zintl–Klemm rules. Electronic band structure calculations confirm them to be semiconductors. - Graphical abstract: AE 3 Al 2 Pn 4 and AE 3 Ga 2 Pn 4 (AE=Ca, Sr, Ba, Eu; Pn=P, As) crystallize in two different structures—Ca 3 Al 2 P 4 , Sr 3 Al 2 As 4 , Eu 3 Al 2 P 4 , Eu 3 Al 2 As 4 , Ca 3 Ga 2 P 4 , Sr 3 Ga 2 P 4 , Sr 3 Ga 2 As 4 , and Eu 3 Ga 2 As 4 , are isotypic with the previously reported Ca 3 Al 2 As 4 (space group C2/c (No. 15)), while Ba 3 Al 2 P 4 and Ba 3 Al 2 As 4 adopt a different structure known for Na 3 Fe 2 S 4 (space group Pnma (No. 62). The polyanions in both structures are made up of TrPn 4 tetrahedra, which by sharing common corners and edges, form 2 ∞ [TrPn 2 ] 3– layers in the former and 1 ∞ [TrPn 2 ] 3– chains in Ba 3 Al 2 P 4 and Ba 3 Al 2 As 4 . Highlights: ► AE 3 Ga 2 Pn 4 (AE=Ca, Sr, Ba, Eu; Pn=P, As) are new ternary pnictides. ► Ba 3 Al 2 P 4 and Ba 3 Al 2 As 4 adopt the Na 3 Fe 2 S 4 structure type. ► The Sr- and Ca-compounds crystallize with the Ca 3

  3. Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors

    International Nuclear Information System (INIS)

    Moriyama, Yoshihiko; Kamimuta, Yuuichi; Ikeda, Keiji; Tezuka, Tsutomu

    2012-01-01

    Tensile strain of over 1% in Ge stripes sandwiched between a pair of SiGe source-drain stressors was demonstrated. The Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET)-like structures were fabricated on a (001)-Ge substrate having SiO 2 dummy-gate stripes with widths down to 26 nm. Recess-regions adjacent to the dummy-gate stripes were formed by an anisotropic wet etching technique. A damage-free and well-controlled anisotropic wet etching process is developed in order to avoid plasma-induced damage during a conventional Reactive-ion Etching process. The SiGe stressors were epitaxially grown on the recesses to simulate strained Ge n-channel Metal–Insulator–Semiconductor Field-Effect Transistors (MISFETs) having high electron mobility. A micro-Raman spectroscopy measurement revealed tensile strain in the narrow Ge regions which became higher for narrower regions. Tensile strain of up to 1.2% was evaluated from the measurement under an assumption of uniaxial strain configuration. These results strongly suggest that higher electron mobility than the upper limit for a Si-MOSFET is obtainable in short-channel strained Ge-nMISFETs with the embedded SiGe stressors.

  4. A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT

    Science.gov (United States)

    Fu, Qiang; Zhang, Wan-Rong; Jin, Dong-Yue; Zhao, Yan-Xiao; Wang, Xiao

    2016-12-01

    The product of the cutoff frequency and breakdown voltage (fT×BVCEO) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N+-buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of fT×BVCEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness (TBOX) on fT, BVCEO, and the FOM of fT×BVCEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces fT, slightly increases BVCEO to some extent, but ultimately degrades the FOM of fT×BVCEO. Although the fT, BVCEO, and the FOM of fT×BVCEO can be improved by increasing SOI insulator SiO2 layer thickness TBOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick TBOX, a thin N+-buried layer is introduced into collector region to not only improve the FOM of fT×BVCEO, but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N+-buried layer in collector region is investigated in detail. The result show that the FOM of fT×BVCEO is improved and the device temperature decreases as the N+-buried layer shifts toward SOI substrate insulation layer. The approach to introducing a thin N+-buried layer

  5. A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT

    International Nuclear Information System (INIS)

    Fu Qiang; Zhang Wan-Rong; Jin Dong-Yue; Zhao Yan-Xiao; Wang Xiao

    2016-01-01

    The product of the cutoff frequency and breakdown voltage ( f T ×BV CEO ) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N + -buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of f T ×BV CEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness ( T BOX ) on f T , BV CEO , and the FOM of f T ×BV CEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces f T , slightly increases BV CEO to some extent, but ultimately degrades the FOM of f T ×BV CEO . Although the f T , BV CEO , and the FOM of f T ×BV CEO can be improved by increasing SOI insulator SiO 2 layer thickness T BOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO 2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick T BOX , a thin N + -buried layer is introduced into collector region to not only improve the FOM of f T ×BV CEO , but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N + -buried layer in collector region is investigated in detail. The result show that the FOM of f T ×BV CEO is improved and the device temperature decreases as the N + -buried layer shifts toward SOI substrate insulation layer

  6. XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

    International Nuclear Information System (INIS)

    Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

    2005-01-01

    Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments

  7. Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

    Science.gov (United States)

    Liao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.

    2018-05-01

    We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5–95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5–4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1‑x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1‑x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core ‘building block’ required for the fabrication of Ge-based MOS devices.

  8. Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix.

    Science.gov (United States)

    Buljan, M; Radić, N; Sancho-Paramon, J; Janicki, V; Grenzer, J; Bogdanović-Radović, I; Siketić, Z; Ivanda, M; Utrobičić, A; Hübner, R; Weidauer, R; Valeš, V; Endres, J; Car, T; Jerčinović, M; Roško, J; Bernstorff, S; Holy, V

    2015-02-13

    We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells.

  9. Evaluation excitation functions for "2"8Si(n,p)"2"8Al, "3"1P(n,p)"3"1Si, and "1"1"3In(n,γ)"1"1"4"mIn reactions

    International Nuclear Information System (INIS)

    Zolotarev, K.I.

    2014-10-01

    Cross section data for "2"8Si(n,p)"2"8Al, "3"1P(n,p)"3"1Si and "1"1"3In(n,γ)"1"1"4"mIn reactions are needed for solving a wide spectrum of scientific and technical tasks. The excitation function of "2"8Si(n,p)"2"8Al reaction refers to the nuclear data involved in fusion reactor design calculations. The "2"8Si(n,p)"2"8Al reaction is interesting also as the monitor reaction for measurements at fusion facilities. Activation detectors on the basis of the 31P(n,p)31Si reaction are commonly used in the reactor dosimetry. The "1"1"3In(n,γ)"1"1"4"mIn reaction is promising regarding reactor dosimetry application for two reasons. First, due to the "1"1"4"mIn decay parameters which are rather suitable for activation measurements. Half-life of "1"1"4"mIn is equal to T_1/_2 = (49.51 ± 0.01) days and gamma spectrum accompanying decay has only one line with energy 190.27 keV and intensity (15.56 ± 0.15)%. Second, the "1"1"3In(n,γ)"1"1"4"mIn reaction rate may be measured by using one activation detector simultaneously with the "1"1"5In(n,γ)"1"1"6"mIn reaction. Preliminary analysis of existing evaluated excitation functions for "2"8Si(n,p)"2"8Al, "3"1P(n,p)"3"1Si and "1"1"3In(n,γ)"1"1"4"mIn reactions show that new evaluations are needed for all above mentioned reactions. This report is devoted to the preparation of the new evaluations of cross sections data and related covariance matrixes of uncertainties for the "2"8Si(n,p)"2"8Al, "3"1P(n,p)"3"1Si and "1"1"3In(n,γ)"1"1"4"mIn reactions.

  10. Physics Nobel Prize (PNP in 2008

    Directory of Open Access Journals (Sweden)

    José Maria Filardo Bassalo

    2009-08-01

    Full Text Available In this article we will talk about the Nobel Prize in Physics 2008, granted  to  the Japanese  physicists  Yoichiro  Nambu,  Makoto Kobayashi and Toshihide Maskawa,  for  their  discovery  of  the mechanisms involving strong interactions symmetries (quiral, by Nambu, and in weak interactions (charge-parity, by Kobayashi and Maskawa.

  11. Evaluation of the cross-sections for the reactions 19F(n,2n)18F, 31P(n,p)31Si, 93Nb(n,n')sup(93m)Nb and 103Rh(n,n')sup(103m)Rh

    International Nuclear Information System (INIS)

    Strohmaier, B.; Tagesen, S.; Vonach, H.

    1980-01-01

    The cross-sections for the four important neutron dosimetry reactions 19 F(n,2n) 18 F, 31 P(n,p) 31 Si, 93 Nb(n,n')sup(93m)Nb and 103 Rh(n,n')sup(103m)Rh were evaluated in the neutron energy range from threshold to 20 MeV. For the 19 F(n,2n) reaction the evaluation could be based entirely on experimental data; for the reactions 31 P(n,p) 31 Si and 103 Rh(n,n')sup(103m)Rh large gaps in the experimental excitation functions and large discrepancies between the existing data made it necessary to supplement the experimental data by cross-section calculations and to give about equal weight to the experimental and calculated cross-sections. For the 93 Nb(n,n')sup(93m)Nb reaction the evaluation had to be based entirely on the theoretically calculated cross-sections. All data sets were critically reviewed and obviously erroneous data sets were disregarded. If necessary, the data were renormalized in order to take into account adjustments in corresponding standard cross-sections and decay schemes. For each evaluated cross-sections also an uncertainty (on a 1sigma confidence level) was derived taking into account the errors given by the experimentalists, the general consistency of the experimental data and the estimated errors of the theoretically calculated cross-sections. (orig.) [de

  12. Synthesis and structural characterization of the Zintl phases Na{sub 3}Ca{sub 3}TrPn{sub 4}, Na{sub 3}Sr{sub 3}TrPn{sub 4}, and Na{sub 3}Eu{sub 3}TrPn{sub 4} (Tr=Al, Ga, In; Pn=P, As, Sb)

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yi [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States); Suen, Nian-Tzu [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States); College of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002 (China); Kunene, Thabiso; Stoyko, Stanislav [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States); Bobev, Svilen, E-mail: bobev@udel.edu [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States)

    2017-05-15

    15 new quaternary Zintl phases have been synthesized by solid-state reactions from the respective elements, and their structures have been determined by single-crystal X-ray diffraction. Na{sub 3}E{sub 3}TrPn{sub 4} (E=Ca, Sr, Eu; Tr=Al, Ga, In; Pn=P, As, Sb) crystallize in the hexagonal crystal system with the non-centrosymmetric space group P6{sub 3}mc (No. 186). The structure represents a variant of the K{sub 6}HgS{sub 4} structure type (Pearson index hP22) and features [TrPn{sub 4}]{sup 9–} tetrahedral units, surrounded by Na{sup +} and Ca{sup 2+}, Sr{sup 2+}, Eu{sup 2+} cations. The nominal formula rationalization [Na{sup +}]{sub 3}[E{sup 2+}]{sub 3}[TrPn{sub 4}]{sup 9–} follows the octet rule, suggesting closed-shell configurations for all atoms and intrinsic semiconducting behavior. However, structure refinements for several members hint at disorder and mixing of cations that potentially counteract the optimal valence electron count. - Graphical abstract: The hexagonal, non-centrosymmetric structure of Na{sub 3}E{sub 3}TrPn{sub 4} (E=Ca, Sr, Eu; Tr=Al, Ga, In; Pn=P, As, Sb) features [TrPn{sub 4}]{sup 9–} tetrahedral units, surrounded by Na{sup +} and Ca{sup 2+}, Sr{sup 2+}, Eu{sup 2+} cations. - Highlights: • 15 quaternary phosphides, arsenides, and antimonides are synthesized and structurally characterized. • The structure is a variant of the hexagonal K{sub 6}HgS{sub 4}-type, with distinctive pattern for the cations. • Occupational and/or positional disorder of yet unknown origin exists for some members of the series.

  13. Hvad kan teknologistudier sige arbejdslivsstudier?

    DEFF Research Database (Denmark)

    Buch, Anders

    2007-01-01

    to theoretical and methodological questions in the social sciences. The article argues that these reflections should be incorporated in order that work life studies can give appropriate attention to the impact of technology. Further the article discusses the influence of Actor Network Theory (ANT) in the social...... sciences. ANT has become popular in its aspirations to combine 'societal'and 'technological' factors in a seamless way. But is it possible for ANT to bridge the divide between 'societal' and 'technological' explanations in the social sciences? The article questions the ANT project and stresses that work...

  14. Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

    Science.gov (United States)

    Chagarov, Evgueni A.; Kavrik, Mahmut S.; Fang, Ziwei; Tsai, Wilman; Kummel, Andrew C.

    2018-06-01

    Comprehensive Density-Functional Theory (DFT) Molecular Dynamics (MD) simulations were performed to investigate interfaces between a-HfO2 and SiGe or Ge semiconductors with fully-stoichiometric a-SiO2 or sub-oxide SiO interlayers. The electronic structure of the selected stacks was calculated with a HSE06 hybrid functional. Simulations were performed before and after hydrogen passivation of residual interlayer defects. For the SiGe substrate with Ge termination prior to H passivation, the stacks with a-SiO suboxide interlayer (a-HfO2/a-SiO/SiGe) demonstrate superior electronic properties and wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/SiGe). After H passivation, most of the a-HfO2/a-SiO2/SiGe defects are passivated. To investigate effect of random placement of Si and Ge atoms additional simulations with a randomized SiGe slab were performed demonstrating improvement of electronic structure. For Ge substrates, before H passivation, the stacks with a SiO suboxide interlayer (a-HfO2/a-SiO/Ge) also demonstrate wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/Ge). However, even for a-HfO2/a-SiO/Ge, the Fermi level is shifted close to the conduction band edge (CBM) consistent with Fermi level pinning. Again, after H passivation, most of the a-HfO2/a-SiO2/Ge defects are passivated. The stacks with fully coordinated a-SiO2 interlayers have much stronger deformation and irregularity in the semiconductor (SiGe or Ge) upper layers leading to multiple under-coordinated atoms which create band-edge states and decrease the band-gap prior to H passivation.

  15. Domestic minor sex trafficking: what the PNP needs to know.

    Science.gov (United States)

    Hornor, Gail

    2015-01-01

    Human trafficking is a major global public health problem and represents a substantial human rights violation. Human trafficking has been receiving attention in both the lay media and professional literature. Human trafficking can include commercial sex, forced labor, child soldiers, and stealing of human organs. One form of human trafficking represents a significant American pediatric health problem: domestic minor sex trafficking (DMST). DMST is the commercial sexual abuse of children by selling, buying, or trading their sexual service. This continuing education article will define DMST and discuss it in terms of prevalence, risk factors, and practice implications for the pediatric nurse practitioner. Copyright © 2015 National Association of Pediatric Nurse Practitioners. Published by Elsevier Inc. All rights reserved.

  16. Helium impurities in a PNP-primary coolant circuit

    International Nuclear Information System (INIS)

    Reif, M.

    1981-01-01

    The concentration of impurities to be expected have been defined in consideration of recent findings concerning the rates of infiltration and formation and the reaction mechanisms of the impurity components in the circuit. The data obtained correspond with the requirements on the metallic high-temperature components as well as with the requirements of limited graphite corrosion. (DG) [de

  17. Evaluation of pelletron accelerator facility to study radiation effects on semiconductor devices

    International Nuclear Information System (INIS)

    Prakash, A. P. Gnana; Pushpa, N.; Praveen, K. C.; Naik, P. S.; Revannasiddaiah, D.

    2012-01-01

    In this paper we present the comprehensive results on the effects of different radiation on the electrical characteristics of different semiconductor devices like Si BJT, n-channel MOSFETs, 50 GHz and 200 GHz silicon-germanium heterojunction bipolar transistor (SiGe HBTs). The total dose effects of different radiation are compared in the same total dose ranging from 100 krad to 100 Mrad. We show that the irradiation time needed to reach very high total dose can be reduced by using Pelletron accelerator facilities instead of conventional irradiation facilities.

  18. Evaluation of pelletron accelerator facility to study radiation effects on semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, A. P. Gnana; Pushpa, N.; Praveen, K. C.; Naik, P. S.; Revannasiddaiah, D. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006, Karnataka (India)

    2012-06-05

    In this paper we present the comprehensive results on the effects of different radiation on the electrical characteristics of different semiconductor devices like Si BJT, n-channel MOSFETs, 50 GHz and 200 GHz silicon-germanium heterojunction bipolar transistor (SiGe HBTs). The total dose effects of different radiation are compared in the same total dose ranging from 100 krad to 100 Mrad. We show that the irradiation time needed to reach very high total dose can be reduced by using Pelletron accelerator facilities instead of conventional irradiation facilities.

  19. Kan man sige sådan?

    DEFF Research Database (Denmark)

    Kristoffersen, Jette Hedegaard

    2016-01-01

    Der er forskel på det, vi siger, og det, vi tror, vi siger. En stor eksempelsamling, et korpus, viser, hvordan et sprog faktisk bruges. Dansk tegnsprog får nu et sådant korpus, der skal hjælpe sprogets brugere og forskere....

  20. Hvordan kan man sige nej til GMO?

    DEFF Research Database (Denmark)

    Heðinsdóttir, Katla; Gjerris, Mickey

    2015-01-01

    Modstandere af genteknologi udtrykker ofte deres bekymring med, at teknologien er “unaturlig”. Men hvad mener de egentlig med det? Og er det et synspunkt, der skal tages seriøst, hvis genmodificering af fødevarevarer kan være med til at eliminere sult og fejlernæring i verden?...

  1. Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs

    International Nuclear Information System (INIS)

    D'Alessandro, V; Sasso, G; Rinaldi, N; Aufinger, K

    2014-01-01

    An extensive on-wafer experimental campaign is performed to extract the thermal resistance of state-of-the-art toward-THz silicon germanium bipolar transistors designed and developed within the European DOTFIVE project. The dependence of this critical parameter on scaling, as well as on the emitter layout, is carefully evaluated, and the resulting junction temperatures are determined.

  2. Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors

    Energy Technology Data Exchange (ETDEWEB)

    LI,N.Y.; CHANG,PING-CHIH; BACA,ALBERT G.; LAROCHE,J.R.; REN,F.; ARMOUR,E.; SHARPS,P.R.; HOU,H.Q.

    2000-08-01

    The authors demonstrate, for the first time, both functional Pnp AlGaAs/InGaAsN/GaAs (Pnp InGaAsN) and Npn InGaP/InGaAsN/GaAs (Npn InGaAsN) double heterojunction bipolar transistors (DHBTs) using a 1.2 eV In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} as the base layer for low-power electronic applications. The Pnp InGaAsN DHBT has a peak current gain ({beta}) of 25 and a low turn-on voltage (V{sub ON}) of 0.79 V. This low V{sub ON} is {approximately} 0.25 V lower than in a comparable Pnp AlGAAs/GaAs HBT. For the Npn InGaAsN DHBT, it has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in an InGaP/GaAs HBT. A peak {beta} of 7 with nearly ideal I-V characteristics has been demonstrated. Since GaAs is used as the collector of both Npn and Pnp InGaAsN DHBTs, the emitter-collector breakdown voltage (BV{sub CEO}) are 10 and 12 V, respectively, consistent with the BV{sub CEO} of Npn InGaP/GaAs and Pnp AlGaAs/GaAs HBTs of comparable collector thickness and doping level. All these results demonstrate the potential of InGaAsN DHBTs as an alternative for application in low-power electronics.

  3. Si-Ge Nano-Structured with Tungsten Silicide Inclusions

    Science.gov (United States)

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2014-01-01

    Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

  4. Spin-polarized photoemission from SiGe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2013-12-04

    We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

  5. SiGe Intersubband Detectors for Terahertz Communication and Sensing

    National Research Council Canada - National Science Library

    Kolodzey, James

    2003-01-01

    We report on the design and fabrication of THz detectors based on silicon germanium nanostructures grown by MBE to obtain intersubband transitions in the energy range from 4.1 meV to 4.1 meV (1 to 10 THz...

  6. The effect of magnetic field on chiral transmission in p-n-p graphene junctions

    Science.gov (United States)

    Li, Yuan; Wan, Qi; Peng, Yingzi; Wang, Guanqing; Qian, Zhenghong; Zhou, Guanghui; Jalil, Mansoor B. A.

    2015-12-01

    We investigate Klein tunneling in graphene heterojunctions under the influence of a perpendicular magnetic field via the non-equilibrium Green’s function method. We find that the angular dependence of electron transmission is deflected sideways, resulting in the suppression of normally incident electrons and overall decrease in conductance. The off-normal symmetry axis of the transmission profile was analytically derived. Overall tunneling conductance decreases to almost zero regardless of the potential barrier height when the magnetic field (B-field) exceeds a critical value, thus achieving effective confinement of Dirac fermions. The critical field occurs when the width of the magnetic field region matches the diameter of the cyclotron orbit. The potential barrier also induces distinct Fabry-Pérot fringe patterns, with a “constriction region” of low transmission when is close to the Fermi energy. Application of B-field deflects the Fabry-Pérot interference pattern to an off-normal angle. Thus, the conductance of the graphene heterojunctions can be sharply modulated by adjusting the B-field strength and the potential barrier height relative to the Fermi energy.

  7. The effect of magnetic field on chiral transmission in p-n-p graphene junctions.

    Science.gov (United States)

    Li, Yuan; Wan, Qi; Peng, Yingzi; Wang, Guanqing; Qian, Zhenghong; Zhou, Guanghui; Jalil, Mansoor B A

    2015-12-18

    We investigate Klein tunneling in graphene heterojunctions under the influence of a perpendicular magnetic field via the non-equilibrium Green's function method. We find that the angular dependence of electron transmission is deflected sideways, resulting in the suppression of normally incident electrons and overall decrease in conductance. The off-normal symmetry axis of the transmission profile was analytically derived. Overall tunneling conductance decreases to almost zero regardless of the potential barrier height V0 when the magnetic field (B-field) exceeds a critical value, thus achieving effective confinement of Dirac fermions. The critical field occurs when the width of the magnetic field region matches the diameter of the cyclotron orbit. The potential barrier also induces distinct Fabry-Pérot fringe patterns, with a "constriction region" of low transmission when V0 is close to the Fermi energy. Application of B-field deflects the Fabry-Pérot interference pattern to an off-normal angle. Thus, the conductance of the graphene heterojunctions can be sharply modulated by adjusting the B-field strength and the potential barrier height relative to the Fermi energy.

  8. Adsorption of p-Nitrophenol (PNP) on new adsorbents prepared from diatomite and charcoal

    International Nuclear Information System (INIS)

    Hamdi, B.; Khelifa, N.; Chernai-Hamdi, S.; Hadjari, H.

    2009-01-01

    Increasing attention has been paid to mesoporous materials with high surface area and narrow pore size distribution because of their diverse applications (e. g., adsorbents, catalysts, and host materials). Inorganic composite materials (ICM) prepared by a mixture of natural diatomite (macroporous materials) and charcoal (microporous material) in particular operative conditions. (Author)

  9. Childhood trauma exposure and toxic stress: what the PNP needs to know.

    Science.gov (United States)

    Hornor, Gail

    2015-01-01

    Trauma exposure in childhood is a major public health problem that can result in lifelong mental and physical health consequences. Pediatric nurse practitioners must improve their skills in the identification of trauma exposure in children and their interventions with these children. This continuing education article will describe childhood trauma exposure (adverse childhood experiences) and toxic stress and their effects on the developing brain and body. Adverse childhood experiences include a unique set of trauma exposures. The adverse childhood experiences or trauma discussed in this continuing education offering will include childhood exposure to emotional abuse, physical abuse, sexual abuse, emotional neglect, physical neglect, domestic violence, household substance abuse, household mental illness, parental separation or divorce, and a criminal household member. Thorough and efficient methods of screening for trauma exposure will be discussed. Appropriate intervention after identification of trauma exposure will be explored. Copyright © 2015 National Association of Pediatric Nurse Practitioners. Published by Elsevier Inc. All rights reserved.

  10. Prototype plant for nuclear process heat (PNP) - operation of the pilot plant for hydrogasification of coal

    International Nuclear Information System (INIS)

    Bruengel, N.; Dehms, G.; Fiedler, P.; Gerigk, H.P.; Ruddeck, W.; Schrader, L.; Schumacher, H.J.

    1988-04-01

    The Rheinische Braunkohlenwerke AG developed the process of hydrogasification of coal in a fluidized bed for generation of SNG. On basis of test results obtained in a semi-technical pilot plant of a through-put of 250 kg/h dried coal a large pilot plant was erected processing 10 t/h dried brown coal. This plant was on stream for about 14700 h, of which about 7800 h were with gasifier operation; during this time about 38000 t of dried brown coal of the Rhenish district were processed containing 4 to 25% of ash. At pressures of 60 to 120 bar and temperatures of 800 to 935 0 C carbon conversion rates up to 81 percent and methane amounts of 5000 m 3 (STP)/h were reached. The decisive parameter for methane generation was the hydrogen/coal-ratio. Even at high moisture contents, usually diminishing the methane yield from the coal essentially, by high hydrogen/coal-ratios high methane yields could be obtained. The gasifier itself caused no troubles during the total time operation. Difficulties with the original design of the residual char cooler could be overcome by change-over from water injection to liquid carbon dioxide. The design of the heat recovery system proved well. Alltogether so the size increasement of the gasifier from the semi-technical to the large pilot plant as well as the harmonization of gas generation and gas refining was proved. (orig.) With 20 refs., 20 tabs., 81 figs [de

  11. Single-Event Transient Testing of Low Dropout PNP Series Linear Voltage Regulators

    Science.gov (United States)

    Adell, Philippe; Allen, Gregory

    2013-01-01

    As demand for high-speed, on-board, digital-processing integrated circuits on spacecraft increases (field-programmable gate arrays and digital signal processors in particular), the need for the next generation point-of-load (POL) regulator becomes a prominent design issue. Shrinking process nodes have resulted in core rails dropping to values close to 1.0 V, drastically reducing margin to standard switching converters or regulators that power digital ICs. The goal of this task is to perform SET characterization of several commercial POL converters, and provide a discussion of the impact of these results to state-of-the-art digital processing IC through laser and heavy ion testing

  12. Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

    KAUST Repository

    Dong, Y.; Mooney, P. M.; Cai, F.; Anjum, Dalaver H.; Ur-Rehman, N.; Zhang, Xixiang; Xia, G. (Maggie)

    2014-01-01

    ”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced

  13. Catalytic mechanisms of direct pyrrole synthesis via dehydrogenative coupling mediated by PNP-Ir or PNN-Ru pincer complexes: Crucial role of proton-transfer shuttles in the PNP-Ir system

    KAUST Repository

    Qu, Shuanglin; Dang, Yanfeng; Song, Chunyu; Wen, Mingwei; Huang, Kuo-Wei; Wang, Zhixiang

    2014-01-01

    lower catalyst loading than the PNN-Ru system. We discuss how the differences are resulted in terms of electronic and geometric structures of the catalysts and how to use the features in catalyst development. © 2014 American Chemical Society.

  14. Quantum Cryptography II: How to re-use a one-time pad safely even if P=NP.

    Science.gov (United States)

    Bennett, Charles H; Brassard, Gilles; Breidbart, Seth

    2014-01-01

    When elementary quantum systems, such as polarized photons, are used to transmit digital information, the uncertainty principle gives rise to novel cryptographic phenomena unachievable with traditional transmission media, e.g. a communications channel on which it is impossible in principle to eavesdrop without a high probability of being detected. With such a channel, a one-time pad can safely be reused many times as long as no eavesdrop is detected, and, planning ahead, part of the capacity of these uncompromised transmissions can be used to send fresh random bits with which to replace the one-time pad when an eavesdrop finally is detected. Unlike other schemes for stretching a one-time pad, this scheme does not depend on complexity-theoretic assumptions such as the difficulty of factoring.

  15. Temperature measurement: Development work on noise thermometry and improvement of conventional thermocouples for applications in nuclear process heat (PNP)

    International Nuclear Information System (INIS)

    Brixy, H.; Hecker, R.; Oehmen, J.; Barbonus, P.; Hans, R.

    1982-06-01

    The behaviour was studied of NiCr-Ni sheathed thermocouples (sheath Inconel 600 or Incoloy 800, insulation MgO) in a helium and carbon atmosphere at temperatures of 950-1150 deg. C. All the thermocouples used retained their functional performance. The insulation resistance tended towards a limit value which is dependent on the temperature and quality of the thermocouple. Temperature measurements were loaded with great uncertainty in the temperature range of 950-1150 deg. C. Recalibrations at the temperature of 950 deg. C showed errors of up to 6%. Measuring sensors were developed which consist of a sheathed double thermocouple with a noise resistor positioned between the two hot junctions. Using the noise thermometer it is possible to recalibrate the thermocouple at any time in situ. A helium system with a high temperature experimental area was developed to test the thermocouples and the combined thermocouple-noise thermometer sensors under true experimental conditions

  16. Visible laser and UV-A radiation impact on a PNP degrading Moraxella strain and its rpoS mutant.

    Science.gov (United States)

    Nandakumar, Kanavillil; Keeler, Werden; Schraft, Heidi; Leung, Kam T

    2006-07-05

    The role of stationary phase sigma factor gene (rpoS) in the stress response of Moraxella strain when exposed to radiation was determined by comparing the stress responses of the wild-type (WT) and its rpoS knockout (KO) mutant. The rpoS was turned on by starving the WT cultures for 24 h in minimal salt medium. Under non-starved condition, both WT and KO planktonic Moraxella cells showed an increase in mortality with the increase in duration of irradiation. In the planktonic non-starved Moraxella, for the power intensity tested, UV radiation caused a substantially higher mortality rate than did by the visible laser light (the mortality rate observed for 15-min laser radiation was 53.4 +/- 10.5 and 48.7 +/- 8.9 for WT and KO, respectively, and 97.6 +/- 0 and 98.5 +/- 0 for 25 s of UV irradiation in WT and KO, respectively). However, the mortality rate decreased significantly in the starved WT when exposed to these two radiations. In comparison, rpoS protected the WT against the visible laser light more effectively than it did for the UV radiation. The WT and KO strains of Moraxella formed distinctly different types of biofilms on stainless steel coupons. The KO strain formed a denser biofilm than did the WT. Visible laser light removed biofilms from the surfaces more effectively than did the UV. This was true when comparing the mortality of bacteria in the biofilms as well. The inability of UV radiation to penetrate biofilms due to greater rates of surface absorption is considered to be the major reason for the weaker removal of biofilms in comparison to that of the visible laser light. This result suggests that high power visible laser light might be an effective tool for the removal of biofilms. (c) 2006 Wiley Periodicals, Inc.

  17. An investigation of group IV alloys and their applications in bipolar transistors

    International Nuclear Information System (INIS)

    Anteney, I.M.

    2000-09-01

    This thesis investigates the use of carbon in group IV alloys and their potential uses in bipolar transistors. The first part of the thesis investigates the ability of carbon to suppress transient enhanced diffusion in SiGe heterojunction bipolar transistors, whilst the second part deals with the impact of carbon incorporation on the electrical properties of polycrystalline silicon and silicon-germanium films. A background doping concentration (10 20 cm -3 ) of C has been introduced into the base of SiGe HBTs with the aim of studying the effects of C on TED of B from the base. An electrical method is used to extract the bandgap narrowing in the base of SiGe and SiGe:C HBTs through measurements of the temperature dependence of I c at different C/B reverse biases. The method is very sensitive to small amounts of dopant out-diffusion from the base and hence is ideal for determining the effect of C on TED. Extracted BGN values of 115meV and 173meV were obtained for the SiGe and SiGe:C HBTs respectively, for a C/B reverse bias of 0V. Increasing the C/B reverse bias to 1V increased the extracted BGN of the SiGe HBT to 145meV, but left the SiGe:C value unchanged. This demonstrates that no parasitic energy barrier exists in the SiGe:C HBT and that TED has been suppressed. The effect of carbon position and concentration has been studied by introducing a peak C concentration of 10 20 cm -3 in the collector and 1.1x10 19 cm -3 or 1.5x10 19 cm -3 C in the base. From these measurements it has been shown that TED is only suppressed in the device with 1.5x10 19 cm -3 C in the base, indicating that a C concentration of 1.5x10 19 cm -3 is needed to suppress TED and that the C needs to be co-located with the B profile. The effects of carbon on the electrical properties of polycrystalline Si and SiGe films have been investigated. The resistivity, Hall mobility (μ H ) and effective carrier concentration (N EFF ) of n- and p-type polySi 1-y C y and polySi 0.82-y Ge 0.18 C y layers

  18. Nutikad eestlased, küsige minult raha / Steve Jürvetson ; intervjueerinud Annika Matson

    Index Scriptorium Estoniae

    Jürvetson, Steve, 1967-

    2009-01-01

    Eesti soost USA riskikapitalist vastab küsimustele, mis puudutavad Eesti aitamist uuele majandustõusule, investeeringuid väärivaid ettevõtteid Eestis, majanduskriisi mõju Jürvetsoni tööle, viimaseid investeeringuid, Skype'i tagasiostuplaane, Skype'i edukust börsil, esimese suure raha teenimist ning start up'ide leidmise viise

  19. Motor Controller for Extreme Environments Based on SiGe, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed innovation is a motor-control subsystem capable of operation in extreme environments, including those to be encountered on the Moon and Mars....

  20. Thermal expansion of the magnetorefrigerant Gd5(Si,Ge)4

    NARCIS (Netherlands)

    Brück, E.H.; Nazih, M.; de Visser, A.; Zhang, L.; Tegus, O.

    2003-01-01

    We report thermal expansion measurements carried out on a single-crystal of the giant magnetocaloric effect material Gd5(Si0.43Ge0.57)4. At the magneto-structural phase transition at T0~240 K, large steps in the relative length change ÄL/L along the principle crystallographic axes are observed. The

  1. X-band active balun MMIC in SiGe technology

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.

    Baluns are used to transform an unbalanced input signal into a balanced output signal. Baluns are essential components in many microwave circuits, e.g., balanced mixers, or other differential architectures. When the signal is received by the antenna, it is single ended, and thus need to be conver...

  2. Effect of Ge atoms on crystal structure and optoelectronic properties of hydrogenated Si-Ge films

    Science.gov (United States)

    Li, Tianwei; Zhang, Jianjun; Ma, Ying; Yu, Yunwu; Zhao, Ying

    2017-07-01

    Optoelectronic and structural properties of hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H) alloys prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) were investigated. When the Ge atoms were predominantly incorporated in amorphous matrix, the dark and photo-conductivity decreased due to the reduced crystalline volume fraction of the Si atoms (XSi-Si) and the increased Ge dangling bond density. The photosensitivity decreased monotonously with Ge incorporation under higher hydrogen dilution condition, which was attributed to the increase in both crystallization of Ge and the defect density.

  3. Microwave plasma synthesis of Si/Ge and Si/WSi2 nanoparticles for thermoelectric applications

    Science.gov (United States)

    Petermann, Nils; Schneider, Tom; Stötzel, Julia; Stein, Niklas; Weise, Claudia; Wlokas, Irenäus; Schierning, Gabi; Wiggers, Hartmut

    2015-08-01

    The utilization of microwave-based plasma systems enables a contamination-free synthesis of highly specific nanoparticles in the gas phase. A reactor setup allowing stable, long-term operation was developed with the support of computational fluid dynamics. This paper highlights the prospects of gas-phase plasma synthesis to produce specific materials for bulk thermoelectrics. Taking advantage of specific plasma reactor properties such as Coulomb repulsion in combination with gas temperatures considerably higher than 1000 K, spherical and non-aggregated nanoparticles of multiple compositions are accessible. Different strategies towards various nanostructured composites and alloys are discussed. It is shown that, based on doped silicon/germanium alloys and composites, thermoelectric materials with zT values up to almost unity can be synthesized in one step. First experimental results concerning silicon/tungsten silicide thermoelectrics applying the nanoparticle-in-alloy idea are presented indicating that this concept might work. However, it is found that tungsten silicides show a surprising sinter activity more than 1000 K below their melting temperature.

  4. A SiGe Quadrature Pulse Modulator for Superconducting Qubit State Manipulation

    Science.gov (United States)

    Kwende, Randy; Bardin, Joseph

    Manipulation of the quantum states of microwave superconducting qubits typically requires the generation of coherent modulated microwave pulses. While many off-the-shelf instruments are capable of generating such pulses, a more integrated approach is likely required if fault-tolerant quantum computing architectures are to be implemented. In this work, we present progress towards a pulse generator specifically designed to drive superconducing qubits. The device is implemented in a commercial silicon process and has been designed with energy-efficiency and scalability in mind. Pulse generation is carried out using a unique approach in which modulation is applied directly to the in-phase and quadrature components of a carrier signal in the 1-10 GHz frequency range through a unique digital-analog conversion process designed specifically for this application. The prototype pulse generator can be digitally programmed and supports sequencing of pulses with independent amplitude and phase waveforms. These amplitude and phase waveforms can be digitally programmed through a serial programming interface. Detailed performance of the pulse generator at room temperature and 4 K will be presented.

  5. Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate

    International Nuclear Information System (INIS)

    Bietti, S; Sanguinetti, S; Somaschini, C; Koguchi, N; Isella, G; Chrastina, D; Fedorov, A

    2009-01-01

    We present here the fabrication, via droplet epitaxy, of GaAs/AlGaAs quantum dots with high optical efficiency on Si. The growth substrate lattice parameter was adapted to that of (Al)GaAs via Ge virtual substrates (GeVS). The samples clearly show the presence of quantum dot self-assembly, with the designed shape and density. Photoluminescence measurements, performed at low temperature, show an intense emission band from the quantum dots.

  6. Comparing SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

    Science.gov (United States)

    England, Troy; Curry, Matthew; Carr, Stephen; Mounce, Andrew; Jock, Ryan; Sharma, Peter; Bureau-Oxton, Chloe; Rudolph, Martin; Hardin, Terry; Carroll, Malcolm

    Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will compare two amplifiers based on single-transistor circuits implemented with silicon germanium heterojunction bipolar transistors. Both amplifiers provide gain at low power levels, but the dynamics of each circuit vary significantly. We will explore the gain mechanisms, linearity, and noise of each circuit and explain the situations in which each amplifier is best used. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  7. Si/Ge hetero-structure nanotube tunnel field effect transistor

    KAUST Repository

    Hanna, A. N.

    2015-01-07

    We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd-=-1-V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60-mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5-V.

  8. The structural and electrical characterisation of SiGe heterostructures deposited on strain relaxed virtual substrates

    International Nuclear Information System (INIS)

    Hammond, R.

    1998-09-01

    The influence of lateral dimensions on the relaxation mechanism and the resulting effect on the surface topography of limited-area, linearly graded Si 1-x Ge x virtual substrates has been investigated for the first time. A dramatic change in the relaxation mechanism of such buffer layers has been observed for depositions on Si mesa pillars of lateral dimensions of 10μm and below. For such depositions, misfit dislocations are able to extend, unhindered, and terminate at the edges of the growth zone. In this manner, orthogonal misfit dislocation interactions are avoided, yielding a surface free of the problematic surface cross-hatch roughening. However, as the lateral dimension of the growth zone is increased to 20μm, orthogonal misfit interactions occur and relaxation is dominated by the Modified Frank-Read (MFR) multiplication mechanism. The resulting surface morphology shows a pronounced surface cross-hatch roughening. It is proposed that such cross-hatch roughening is a direct consequence of the cooperative stress fields associated with the MFR mechanism. It is postulated that the method of limited-area, linearly graded buffer layers provides a unique opportunity, by which 'ideal' virtual substrates, free of surface cross-hatch and threading dislocations, may be produced to any Ge content. In addition, a unique method by which the electrical performance of low temperature, strained layer depositions may be optimised is discussed. The method relies on the elimination of as-grown lattice imperfections via a post growth thermal anneal treatment. A 25-fold increase in low temperature hole mobility of a Si 0.5 Ge 0.5 /Si 0.7 Ge 0.3 heterostructure has been demonstrated using a 30minute, 750 deg C in-situ, post growth anneal. (author)

  9. Dual-gate operation and carrier transport in SiGe p-n junction nanowires

    Science.gov (United States)

    Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.

    2017-11-01

    We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.

  10. Phonon Transport at Crystalline Si/Ge Interfaces: The Role of Interfacial Modes of Vibration

    Science.gov (United States)

    Gordiz, Kiarash; Henry, Asegun

    2016-01-01

    We studied the modal contributions to heat conduction at crystalline Si and crystalline Ge interfaces and found that more than 15% of the interface conductance arises from less than 0.1% of the modes in the structure. Using the recently developed interface conductance modal analysis (ICMA) method along with a new complimentary methodology, we mapped the correlations between modes, which revealed that a small group of interfacial modes, which exist between 12–13 THz, exhibit extremely strong correlation with other modes in the system. It is found that these interfacial modes (e.g., modes with large eigen vectors for interfacial atoms) are enabled by the degree of anharmonicity near the interface, which is higher than in the bulk, and therefore allows this small group of modes to couple to all others. The analysis sheds light on the nature of localized vibrations at interfaces and can be enlightening for other investigations of localization. PMID:26979787

  11. Modular SiGe 130 nm Cell Library for Extreme Environments, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — NASA space missions utilizing application-specific integrated circuits (ASICs) under extreme conditions have a critical need for high performance analog cell...

  12. High-frequency noise modeling of Si(Ge) bipolar transistors

    NARCIS (Netherlands)

    Vitale, F.

    2014-01-01

    The design and the optimization of electronic systems often requires a detailed knowledge of the inherent noise generated within semiconductor active devices, constituting the core of such systems. Examples of applications in which noise is a key issue include receiver front-ends in radiofrequency

  13. Spin dynamics in SiGe quantum dot lines and ring molecules

    Science.gov (United States)

    Zinovieva, A. F.; Nenashev, A. V.; Dvurechenskii, A. V.

    2016-04-01

    Semiconductor quantum dot (QD) structures can be used as a model for understanding the effect of the microscopic structure, symmetry of crystals, and molecules on their macroscopic properties. In this work, the results of two theoretical approaches demonstrate that the spin dynamics in ordered QD structures depends on the size, spatial configuration, and topology of the object built of QDs. It was shown that the spin dynamics in QD structures with the hopping regime of conductivity significantly differs from the spin dynamics in two-dimensional (2D) and three-dimensional (3D) structures being at the other side of the metal-insulator transition. The special character of the effective magnetic field δ H fluctuations appearing only during tunneling between quantum dots is responsible for the insensitivity of spin relaxation times to the magnitude of the external magnetic field in infinite QD structures (2D square lattice and 1D linear QD chain). In finite QD structures (QD rings and linear chains), an external magnetic field H0 is directly involved in the spin relaxation process and spin is lost due to interaction with a special combination of fields Δ H ˜[H0×δ H ]/δ H that leads to an unusual orientation dependence of ESR linewidth, recently observed for QD chains. It was shown that the ordering of QD structures can be used for the conservation of spin orientation. For 1D finite quantum dot chains, the ordering can provide the stabilization of all spin components Sx,Sy, and Sz, while for ringlike molecules only Sz polarization can be stabilized. The results obtained in this work can be useful for development of novel semiconductor devices and in quantum information processing.

  14. Si/Ge hetero-structure nanotube tunnel field effect transistor

    KAUST Repository

    Hanna, A. N.; Hussain, Muhammad Mustafa

    2015-01-01

    We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd-=-1-V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60-mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5-V.

  15. Stability to irradiation of SiGe whisker crystals used for sensors of physical values

    Directory of Open Access Journals (Sweden)

    Druzhinin A. A.

    2011-04-01

    Full Text Available An influence of g-irradiation (Co60 with doze up to 1—1018 сm–2 and magnetic field with induction up to 14 T on conduction of 1–xGex (х = 0,03 whisker crystals with resistivity of 0,08—0,025 Оhm·сm in temperature range 4,2—300 K have been studied. It is shown that whisker crystals resistance faintly varies under irradiation with doze 2·1017 сm–2, while their magnetoresistance substantially changes. The strain sensors stable to irradiation action operating in high magnetic fields on the base of the whiskers have been designed.

  16. Amorphization threshold in Si-implanted strained SiGe alloy layers

    International Nuclear Information System (INIS)

    Simpson, T.W.; Love, D.; Endisch, E.; Goldberg, R.D.; Mitchell, I.V.; Haynes, T.E.; Baribeau, J.M.

    1994-12-01

    The authors have examined the damage produced by Si-ion implantation into strained Si 1-x Ge x epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channeling techniques to determine the amorphization threshold in strained Si 1-x Ge x (x = 0.16 and 0.29) over the temperature range 30--110 C. The results are compared with previously reported measurements on unstrained Si 1-x Ge x , and with the simple model used to describe those results. They report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer

  17. Electronic structure of LaFe{sub 2}X{sub 2} (X = Si,Ge)

    Energy Technology Data Exchange (ETDEWEB)

    Hase, I., E-mail: i.hase@aist.go.jp [Electronics and Photonics Research Institute, AIST, Tsukuba, Ibaraki 305-8568 (Japan); Yanagisawa, T. [Electronics and Photonics Research Institute, AIST, Tsukuba, Ibaraki 305-8568 (Japan)

    2011-11-15

    We have calculated the electronic structure of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} from first-principles. The obtained Fermi surfaces of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} resemble those of LaRu{sub 2}Ge{sub 2}, which well explains the result of the dHvA experiments of CeRu{sub 2}Ge{sub 2}. Their density of states curves show the common feature with CaFe{sub 2}As{sub 2}. D(E{sub F}) strongly depends on the distortion of the FeX{sub 4} tetrahedra and/or the height of the X atom, as also found in iron-pnictide system. Recently found iron-pnictide superconductor (Ba,K)Fe{sub 2}As{sub 2} and the heavy-fermion superconductor CeCu{sub 2}Si{sub 2} both have the same crystal structure. In this paper we have calculated the electronic structure of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} from first-principles. These compounds also have the same crystal structure and closely related to both of (Ba,K)Fe{sub 2}As{sub 2} and CeRu{sub 2}Ge{sub 2}. The obtained Fermi surfaces of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} resemble those of LaRu{sub 2}Ge{sub 2}, which are already found that they well explain the results of the dHvA experiments of CeRu{sub 2}Ge{sub 2}. Their density of states curves show the common feature with CaFe{sub 2}As{sub 2}. The density of states at the Fermi level strongly depends on the distortion of the FeX{sub 4} tetrahedra and/or the height of the X atom from the two-dimensional Fe plane, as also found in iron-pnictide system. The electronic specific heat coefficient is 11.8 mJ/mol K{sup 2} for LaFe{sub 2}Si{sub 2} and 12.5 mJ/mol K{sup 2} for LaFe{sub 2}Ge{sub 2}, which is about 1/3 and 1/2 of experimental results, respectively.

  18. Linear microstructural features in R5(Si,Ge)4-type alloys: Difficulties in identification

    International Nuclear Information System (INIS)

    Chumbley, L.S.; Ugurlu, O.; McCallum, R.W.; Dennis, K.W.; Mudryk, Y.; Gschneidner, K.A.; Pecharsky, V.K.

    2008-01-01

    A brief review of the current literature concerning compounds based upon the R 5 (Si x Ge 1-x ) 4 structure reveals that essentially all examined alloys contain 'linear features' similar to those first observed by Szade et al. on the surface of Gd 5 Si 4 , Gd 5 Si 2 Ge 2 and Gd 5 Ge 4 samples. Attempts to characterize these features, using a variety of techniques, have proven to be a difficult task. Rather than becoming clearer and better understood, discrepancies in the reported data have resulted in much confusion. A series of comprehensive experiments involving optical, scanning and transmission electron microscopy, X-ray diffractometry, magnetization, and heat capacity measurements have been performed in an attempt to clarify the situation. These experiments, coupled with a critical examination of published data, allow certain misconceptions and apparent contradictions to be understood and explained. Of major importance is the discovery that the volume fraction of the linear feature present is far lower than what one may estimate on the basis of etched samples. The results of this study support previous data that show the linear features are a second phase of composition R 5 (Si x Ge 1-x ) 3 , and reveal the various difficulties associated with proper identification of this phase due to its small size scale and low volume percentage

  19. Semi-annual report on the second half of the year 1986. Activities: Accompanying planning work for the PNP R and D programme 1985/1986

    International Nuclear Information System (INIS)

    1989-01-01

    As there is high materials utilization in the heat-exchanger structures in the temperature range above 950 0 C, the temperature and velocity distribution must be equalized as far as possible. Specified inlet conditions for the helical He/He heat exchanger which in this respect puts the highest requirements, allow a temperature gradient of ΔT=+15/-30 K, and a velocity range of V=±10%. The required temperature equalization is to be achieved by suitable design measures, for equalization over the pathway from core bottom to hot gas header, through the hot gas pipe and the flow conditioning device before the heat exchanger (temperature gradient at core outlet ΔT=±120 K). Experiments have to be made at the core bottom stone and the integrating structures in order to give proof of the realisation of the required equalization. The experiments will be accompanied by theoretical investigations. (orig./GL) [de

  20. Peripheral pn production and decay angular distributions in the reaction pi /sup -/p to (pn)p at 12 GeV/c incident momentum

    CERN Document Server

    Ghidini, B; Cantore, A; Di Corato, M; Donald, R A; Eades, John; Edwards, D N; Edwards, M E; French, Bernard R; Fry, J R; Houlden, M A; Mandelli, L; Moebes, J P; Müller, K; Navach, F; Palano, A; Palazzi-Cerrina, C; Paul, E; Picciarelli, V; Renneberg, W; Rühmer, W; Smith, I; Zito, G

    1978-01-01

    The reaction pi /sup -/p to (pn)p/sub s/, where p/sub s/ is a slow proton, was measured at 12 GeV/c incident momentum with the CERN-OMEGA spectrometer. Both antiproton and proton were identified uniquely by electronics information. 1844 events with four-momentum transfer squared in the range 0.13

  1. Metal-insulator transition and superconductivity induced by Rh doping in the binary pnictides RuPn (Pn=P, As, Sb)

    Science.gov (United States)

    Hirai, Daigorou; Takayama, Tomohiro; Hashizume, Daisuke; Takagi, Hidenori

    2012-04-01

    Binary ruthenium pnictides, RuP and RuAs, with an orthorhombic MnP structure, were found to show a metal to a nonmagnetic insulator transition at TMI = 270 and 200 K, respectively. In the metallic region above TMI, a structural phase transition, accompanied with a weak anomaly in the resistivity and the magnetic susceptibility, indicative of a pseudogap formation, was identified at Ts = 330 and 280 K, respectively. These two transitions were suppressed by substituting Ru with Rh. We found superconductivity with a maximum Tc = 3.7 and 1.8 K in a narrow composition range around the critical point for the pseudogap phase, Rh content xc = 0.45 and 0.25 for Ru1-xRhxP and Ru1-xRhxAs, respectively, which may provide us with a nonmagnetic route to superconductivity at a quantum critical point.

  2. "Joint Workshop on High Confidence Medical Devices, Software, and Systems (HCMDSS) and Medical Device Plug-and-Play (MD PnP) Interoperability"

    National Research Council Canada - National Science Library

    Goldman, Julian M

    2008-01-01

    Partial support was requested from TATRC, with joint funding from NSF, for a joint workshop to bring together the synergistic efforts and communities of the High Confidence Medical Devices, Software, and Systems (HCMDSS...

  3. RELACIÓN ENTRE LOS RASGOS DE PERSONALIDAD Y NIVELES DE AGRESIVIDAD EN ALUMNOS DE LA ESCUELA TÉCNICO SUPERIOR PNP CHARCANI - AREQUIPA 2015

    OpenAIRE

    RODAS MÁLAGA, MILAGROS FRANCIS

    2016-01-01

    RASGOS DE PERSONALIDAD METAS MOTIVACIONALES MODOS COGNITIVOS COMPORTAMIENTOS INTERPERSONALES AGRESIVIDAD ORIGEN DE LA AGRESIVIDAD TEORÍAS?SOBRE?LA?AGRESIVIDAD COMPONENTES DE LA AGRESIVIDAD ANTECEDENTES INVESTIGATIVOS RESULTADOS

  4. Biodegradation of p-nitrophenol in an aqueous waste stream by immobilized bacteria.

    OpenAIRE

    Heitkamp, M A; Camel, V; Reuter, T J; Adams, W J

    1990-01-01

    Microbiological analyses of activated sludge reactors after repeated exposure to 100 mg of p-nitrophenol (PNP) per liter resulted in the isolation of three Pseudomonas species able to utilize PNP as a sole source of carbon and energy. Cell suspensions of the three Pseudomonas sp., designated PNP1, PNP2, and PNP3, mineralized 70, 60, and 45% of a 70-mg/liter dose of PNP in 24, 48, and 96 h, respectively. Mass-balance analyses of PNP residues for all three cultures showed that undegraded PNP wa...

  5. Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

    Science.gov (United States)

    Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

    2013-05-01

    We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

  6. A SiGe BiCMOS double-balanced mixer with active balun for X-band Doppler radar

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus S.; Johansen, Tom K.; Tamborg, Kjeld M.

    2015-01-01

    and a miniaturized Marchand balun on the LO port. Experimental results shows a conversion gain of +4 dB at 10.5 GHz with an LO drive level of 15 dBm. The LO-IF and RF-IF isolation is better than 36 dB and 26 dB, respectively, in the entire band of operation. The input referred 1 dB compression point is better than...... -11 dBm. The IIP2 is +13 dBm at a supply voltage of 3 V and +16.5 dBm at a supply voltage of 6 V. The measured noise figure is found to be ~6.5 dB at 10.5 GHz....

  7. Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

    International Nuclear Information System (INIS)

    Kim, Sun-Wook; Byeon, Dae-Seop; Jang, Hyunchul; Koo, Sang-Mo; Ko, Dae-Hong; Lee, Hoo-Jeong

    2014-01-01

    This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si 1−x Ge x stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.

  8. In-situ epitaxial growth of heavily phosphorus doped SiGe by low pressure chemical vapor deposition

    CERN Document Server

    Lee, C J

    1998-01-01

    We have studied epitaxial crystal growth of Si sub 1 sub - sub x Ge sub x films on silicon substrates at 550 .deg. C by low pressure chemical vapor deposition. In a low PH sub 3 partial pressure region such as below 1.25x10 sup - sup 3 Pa, both the phosphorus and carrier concentrations increased with increasing PH sub 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH sub 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH sub 4 and GeH sub 4 adsorption/reactions on the surfaces, and its suppression effect on SiH sub 4 is actually much stronger than on GeH sub 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH sub 3 partial pressure region.

  9. Design of a broadband passive X-band double-balanced mixer in SiGe HBT technology

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.

    2014-01-01

    ) and the radio frequency (RF) port. A break out of the Marchand balun is measured. This demonstrates good phase and magnitude match of 0.7° and 0.11 dB, respectively. The Marchand baluns are broadband with a measured 3 dB bandwidth of 6.4 GHz, while still having a magnitude imbalance better than 0.4 d...... frequency of 8.5 GHz is −9.8 dB at an LO drive level of 15 dBm. The whole mixer is very broadband with 3 dB bandwidth from 7 to 12 GHz covering the entire X-band. The LO–IF, RF–IF, and RF–LO isolation is better than 46, 36, and 36 dB, respectively, in the entire band of operation.......B and a phase imbalance better than 5°. Unfortunately with a rather high loss of 2.5 dB, mainly due to the low Q-factor of the inductors used. The mixer is optimized for use in doppler radars and is highly linear with a 1 dB compression point above 12 dBm IIP2 of 66 dBm. The conversion gain at the center...

  10. Strain and strain-release engineering at epitaxial SiGe islands on Si(0 0 1) for microelectronic applications

    International Nuclear Information System (INIS)

    Vastola, G.; Marzegalli, A.; Montalenti, F.; Miglio, Leo

    2009-01-01

    We report original finite element method simulations of the strain components at nanometric GeSi island on Si(0 0 1), for realistic shape, sizes and average composition, discussing the main mechanisms acting in the misfit strain relaxation. The tensile strain induced in a 30 nm Si capping layer and the one upon removing the island, after fixing the top part of the Si layer, is discussed in view of application as a field effect transistor channel, with high career mobility induced by the lattice deformation. The large shear components obtained for steeper island morphologies are predicted to be particularly performing, especially in comparison to one another strained-silicon configuration (totally top-down originated), recently developed by IBM corporation.

  11. SiGe 130 nm-based Rad-Hard ADC for the JEO Mission, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Ridgetop will demonstrate the feasibility of developing a radiation-hardened analog-to-digital converter (ADC) suitable for the Jupiter Europa Orbiter mission. This...

  12. Influence of Ge content on the optical properties of X and W centers in dilute Si-Ge alloys

    DEFF Research Database (Denmark)

    Leitão, J.P.; Carvalho, A.; Marques Pereira, Rui Nuno

    2011-01-01

    Photoluminescence (PL) measurements, performed in Si and Si1−xGex alloys (x= 0.0069 and 0.0125) irradiated with protons and annealed between 100 and 650 ∘C, are combined with first-principles calculations to assess the assignment of the W and X lines to the trigonal and tetragonal forms of the tr...

  13. "Vi har ikke noget at sige, men vi gør det så koncentreret som muligt"

    DEFF Research Database (Denmark)

    Hansen, Kamma Overgaard

    mellemposition mellem på den ene side Arthur C. Dantos udråbelse af postmodernismen som The End of Art og Fredric Jamesons kritiske udlægning af den postmoderne kunst som simulerende og hans begrædelse af en tabt autenticitet - og på den anden side Linda Hutcheons langt mere positive definering af det...... postmoderne som ironisk og parodisk og dermed nytænkende og metareflekterende. Herudfra karakteriserer jeg De Unge Vilde som ironikere ud fra Søren Kierkegaards karakteristisk af ironikeren som en mellemfase mellem det æstetiske og det etiske livsstadie. Videre argumenterer jeg for, at Dantos ’end of art...

  14. Interfaces in Si/Ge atomic layer superlattices on (001)Si: Effect of growth temperature and wafer misorientation

    Science.gov (United States)

    Baribeau, J.-M.; Lockwood, D. J.; Syme, R. W. G.

    1996-08-01

    We have used x-ray diffraction, specular reflectivity, and diffuse scattering, complemented by Raman spectroscopy, to study the interfaces in a series of (0.5 nm Ge/2 nm Si)50 atomic layer superlattices on (001)Si grown by molecular beam epitaxy in the temperature range 150-650 °C. X-ray specular reflectivity revealed that the structures have a well-defined periodicity with interface widths of about 0.2-0.3 nm in the 300-590 °C temperature range. Offset reflectivity scans showed that the diffuse scattering peaks at values of perpendicular wave vector transfer corresponding to the superlattice satellite peaks, indicating that the interfaces are vertically correlated. Transverse rocking scans of satellite peaks showed a diffuse component corresponding to an interface corrugation of typical length scale of ˜0.5 μm. The wavelength of the undulations is a minimum along the miscut direction and is typically 30-40 times larger than the surface average terrace width assuming monolayer steps, independently of the magnitude of the wafer misorientation. The amplitude of the undulation evolves with growth temperature and is minimum for growth at ˜460 °C and peaks at ˜520 °C. Raman scattering showed the chemical abruptness of the interfaces at low growth temperatures and indicated a change in the growth mode near 450 °C.

  15. Design of a SiGe BiCMOS canceller for low frequency noise reduction in direct conversion receivers

    DEFF Research Database (Denmark)

    Squartecchia, Michele; Johansen, Tom Keinicke; Michaelsen, Rasmus Schandorph

    of the local oscillator (LO) toward the RF port of the mixer (Figure 1(a)). This causes the LO self-mixing phenomenon, which is responsible of a significant DC offset at the output of the receiver (Figure 1(b)). In turn, this DC offset gives rise to a high level of low frequency noise affecting the signal...

  16. The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

    Science.gov (United States)

    Ponchak, George E.; Alterovitz, Samuel A.; Katehi, Linda P. B.; Bhattacharya, Pallab K.

    1997-01-01

    Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

  17. A 24 GHz integrated SiGe BiCMOS vital signs detection radar front-end

    DEFF Research Database (Denmark)

    Jensen, Brian Sveistrup; Johansen, Tom K.; Zhurbenko, Vitaliy

    2013-01-01

    In this paper a 24 GHz integrated front-end transceiver for vital signs detection (VSD) radars is described. The heterodyne radar transceiver integrates LO buffering and quadrature splitting circuits, up- and down-conversion SSB mixers and two cascaded receiver LNA's. The chip has been manufactured...

  18. Compact Modeling of Physical Mechanisms Present in the Weak Breakdown Regime of Advanced Si and SiGe Bipolar Transistors

    NARCIS (Netherlands)

    Setekera, R.

    2016-01-01

    With the current increasing demand for faster and more reliable communication and computing electronic devices such as faster wireless communication networks, circuit designers are forced to carry out device optimization in order to achieve the maximum possible performance. To enable full circuit

  19. DotFETs: MOSFETs strained by a Single SiGE dot in a Low-Temperature ELA Technology

    OpenAIRE

    Biasotto, C.

    2011-01-01

    The work presented in this thesis was performed in the context of the European Sixth Framework Program FP6 project “Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits”, referred to as the D-DotFET project. The project had the goal of realizing strain-enhanced mobility in CMOS transistors by transferring strain from a self-assembled germanium dot to the channel of a transistor fabricated above the dot. The initial idea was to dispose of the Ge dot underneath the chann...

  20. DotFETs : MOSFETs strained by a Single SiGE dot in a Low-Temperature ELA Technology

    NARCIS (Netherlands)

    Biasotto, C.

    2011-01-01

    The work presented in this thesis was performed in the context of the European Sixth Framework Program FP6 project “Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits”, referred to as the D-DotFET project. The project had the goal of realizing strain-enhanced mobility in

  1. The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films

    Directory of Open Access Journals (Sweden)

    Mursal Mursal

    2014-07-01

    Full Text Available The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from 2.5 – 12.5 sccm, while the flow rate of SiH4 was kept constant at 70 sccm. The results showed that the deposition rate of a-SiGe:H thin films increased by  increasing of GeH4 gas flow rate. In addition, the Ge content in the film increased and  the optical band gap decreased. The dark conductivity of a-SiGe:H films were relatively constant, whereas the photo conductivity decreased with increasing of Ge content.

  2. ZrO2 as a high-κ dielectric for strained SiGe MOS devices

    Indian Academy of Sciences (India)

    Author Affiliations. R Mahapatra1 G S Kar1 C B Samantaray1 A Dhar1 D Bhattacharya2 S K Ray1. Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India; Material Science Centre, Indian Institute of Technology, Kharagpur 721 302, India ...

  3. Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys

    International Nuclear Information System (INIS)

    Hart, John; Hazbun, Ramsey; Eldridge, David; Hickey, Ryan; Fernando, Nalin; Adam, Thomas; Zollner, Stefan; Kolodzey, James

    2016-01-01

    Tetrasilane and digermane were used to grow epitaxial silicon germanium layers on silicon substrates in a commercial ultra-high vacuum chemical vapor deposition tool. Films with concentrations up to 19% germanium were grown at temperatures from 400 °C to 550 °C. For all alloy compositions, the growth rates were much higher compared to using mono-silane and mono-germane. The quality of the material was assessed using X-ray diffraction, atomic force microscopy, and spectroscopic ellipsometry; all indicating high quality epitaxial films with low surface roughness suitable for commercial applications. Studies of the decomposition kinetics with regard to temperature were performed, revealing an unusual growth rate maximum between the high and low temperature deposition regimes. - Highlights: • Higher order precursors tetrasilane and digermane • Low temperature deposition • Thorough film characterization with temperature • Arrhenius growth rate peak

  4. Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sun-Wook; Byeon, Dae-Seop; Jang, Hyunchul; Koo, Sang-Mo; Ko, Dae-Hong, E-mail: dhko@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Lee, Hoo-Jeong, E-mail: hlee@skku.edu [Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2014-08-25

    This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si{sub 1−x}Ge{sub x} stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.

  5. Vi er ikke robotter, hvis man kan sige det på den måde

    DEFF Research Database (Denmark)

    Schweppenhäuser, Jakob

    2013-01-01

    We Are Not Robots, so to Speak. Digressive Drive through the Multipronged Fallible Art of Nikolaj Zeuthen As a singer, songwriter, comic artist, lyricist, novelist and playwright, Nikolaj Zeuthen has developed a characteristic artistic expression, which formally as well as thematically evokes...... a fundamental impression of fallibility: He sings out of tune, his comics are slipshod and the human beings who populate his universe struggle with everything from unemployment and receiving disappointing presents to deep and existential doubts and fears. The interrelations in relationships, between family...

  6. Assessing allergy management information needs in primary care based on requests for sIgE determinations

    NARCIS (Netherlands)

    Brakel, T. M.; de Flokstra-Blok, B. M. J.; Elberink, J. N. G.; Schuttelaar, M. L. A.; Christoffers, W. A.; Roerdink, E. M.; van der Molen, T.; Dubois, A. E. J.

    Background: For many patients suspected of allergy, management is initially and often ultimately the responsibility of general practitioners (GPs). However, previous studies have shown that GPs find that providing such care is difficult, especially when anaphylactic symptoms occur. An area of

  7. Effects of carbon on phosphorus diffusion in SiGe:C and the implications on phosphorus diffusion mechanisms

    International Nuclear Information System (INIS)

    Lin, Yiheng; Xia, Guangrui; Yasuda, Hiroshi; Wise, Rick; Schiekofer, Manfred; Benna, Bernhard

    2014-01-01

    The use of carbon (C) in SiGe base layers is an important approach to control the base layer dopant phosphorus (P) diffusion and thus enhance PNP heterojunction bipolar transistor (HBT) performance. This work quantitatively investigated the carbon impacts on P diffusion in Si 0.82 Ge 0.18 :C and Si:C under rapid thermal anneal conditions. The carbon molar fraction is up to 0.32%. The results showed that the carbon retardation effect on P diffusion is less effective for Si 0.82 Ge 0.18 :C than for Si:C. In Si 0.82 Ge 0.18 :C, there is an optimum carbon content at around 0.05% to 0.1%, beyond which more carbon incorporation does not retard P diffusion any more. This behavior is different from the P diffusion behavior in Si:C and the B in Si:C and low Ge SiGe:C, which can be explained by the decreased interstitial-mediated diffusion fraction f I P, SiGe to 95% as Ge content increases to 18%. Empirical models were established to calculate the time-averaged point defect concentrations and effective diffusivities as a function of carbon and was shown to agree with previous studies on boron, phosphorus, arsenic and antimony diffusion with carbon.

  8. Validity and reliability of the Malay version of the Hill-Bone compliance to high blood pressure therapy scale for use in primary healthcare settings in Malaysia: A cross-sectional study.

    Science.gov (United States)

    Cheong, A T; Tong, S F; Sazlina, S G

    2015-01-01

    Hill-Bone compliance to high blood pressure therapy scale (HBTS) is one of the useful scales in primary care settings. It has been tested in America, Africa and Turkey with variable validity and reliability. The aim of this paper was to determine the validity and reliability of the Malay version of HBTS (HBTS-M) for the Malaysian population. HBTS comprises three subscales assessing compliance to medication, appointment and salt intake. The content validity of HBTS to the local population was agreed through consensus of expert panel. The 14 items used in the HBTS were adapted to reflect the local situations. It was translated into Malay and then back-translated into English. The translated version was piloted in 30 participants. This was followed by structural and predictive validity, and internal consistency testing in 262 patients with hypertension, who were on antihypertensive agent(s) for at least 1 year in two primary healthcare clinics in Kuala Lumpur, Malaysia. Exploratory factor analyses and the correlation between HBTS-M total score and blood pressure were performed. The Cronbach's alpha was calculated accordingly. Factor analysis revealed a three-component structure represented by two components on medication adherence and one on salt intake adherence. The Kaiser-Meyer-Olkin statistic was 0.764. The variance explained by each factors were 23.6%, 10.4% and 9.8%, respectively. However, the internal consistency for each component was suboptimal with Cronbach's alpha of 0.64, 0.55 and 0.29, respectively. Although there were two components representing medication adherence, the theoretical concepts underlying each concept cannot be differentiated. In addition, there was no correlation between the HBTS-M total score and blood pressure. HBTS-M did not conform to the structural and predictive validity of the original scale. Its reliability on assessing medication and salt intake adherence would most probably to be suboptimal in the Malaysian primary care setting.

  9. Suppressive effects of long-term exposure to P-nitrophenol on gonadal development, hormonal profile with disruption of tissue integrity, and activation of caspase-3 in male Japanese quail (Coturnix japonica)

    OpenAIRE

    Ahmed, Eman; Nagaoka, Kentaro; Fayez, Mostafa; Abdel-Daim, Mohamed M.; Samir, Haney; Watanabe, Gen

    2015-01-01

    P-Nitrophenol (PNP) is considered to be one of nitrophenol derivatives of diesel exhaust particles. PNP is a major metabolite of some organophosphorus compounds. PNP is a persistent organic pollutant as well as one of endocrine-disrupting compounds. Consequently, bioaccumulation of PNP potentiates toxicity. The objectives of the current study were to assess in vivo adverse effects of long-term low doses of PNP exposure on reproductive system during development stage. Twnety-eight-day-old male...

  10. Materials Growth and Optimization of InP/InGaAs and InAlAs/InGaAs Heterojunction Bipolar Transistor Structures by MOCVD Utilizing Carbon and Zinc Base Layer Dopants

    National Research Council Canada - National Science Library

    Givens, Michael

    1996-01-01

    The work in this Phase I program will examine the effect of base dopant species and various structural modifications on the material properties, device performance, and thermal stability of InP based HBTs...

  11. WOCSDICE '98, 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits, May 24-27, 1998, Pannonia Seehotel, Zeuthen, Germany

    National Research Council Canada - National Science Library

    1998-01-01

    .... Topics include material growth and characterization, recent developments in MESFETS, HEMTs, and HBTs, MMlC-Technology, Microwave and millimeter wave power devices, GaN- Devices, Mesoscopic devices...

  12. WOCSDICE 1998: 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits, May 24-27, 1998, Zeuthen, Germany

    National Research Council Canada - National Science Library

    1998-01-01

    .... Topics include material growth and characterization, recent developments in MESFETS, HEMTs, and HBTs, MMlC-Technology, Microwave and millimeter wave power devices, GaN- Devices, Mesoscopic devices...

  13. InGaP DHBT for High Efficiency L-band T/R Module, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — A fully monolithically integrated L-band T/R module using InGaP/GaAs-based HBTs (heterojunction bipolar transistors) for both the transmit and receive functions is...

  14. A cationic Ag-I(PNPtBu) species acting as PNP transfer agent: Facile synthesis of Pd(PNPtBu)(alkyl) complexes and their reactivity compared to PCPtBu analogues

    NARCIS (Netherlands)

    van der Vlugt, J.I.; Siegler, M.A.; Janssen, M.; Vogt, D.; Spek, A.L.

    2009-01-01

    The straightforward Synthesis of cationic complex 1, [Ag(PNtBu)]BF4 (PNPtBu = 1,2-bis[(di-tert-butylphosphino)methyl]pyridine), and its facile transmetalating properties toward gold and palladium are described. The corresponding Au complex [Au(PNPtBu)](2)(BF4)(2) (2) exists its a dimer in the solid

  15. A cationic Agi( PNPtBu) species acting as PNP transfer agent: facile synthesis of Pd(PNPtBu)(alkyl) complexes and their reactivity compared to PCPtBu analogues

    NARCIS (Netherlands)

    Vlugt, van der J.I.; Siegler, M.A.; Janssen, M.C.C.; Vogt, D.; Spek, A.L.

    2009-01-01

    The straightforward synthesis of cationic complex 1, [Ag(PNPtBu)]BF4 (PNPtBu = 1,2-bis[(di-tert-butylphosphino)methyl]pyridine), and its facile transmetalating properties toward gold and palladium are described. The corresponding Au complex [Au(PNPtBu)]2(BF4)2 (2) exists as a dimer in the solid

  16. Purine nucleoside phosphorylase deficiency in two unrelated Saudi patients

    International Nuclear Information System (INIS)

    Alangari, Abdullah; AlHarbi, Abdullah; AlGhonaium Abdulaziz; Santisteban, Ines; Hershfield, Michael

    2009-01-01

    Purine nucleoside phosphorylase (PNP) deficiency is a rare autosomal recessive metabolic disorder that results in combined immunodeficiency, neurologic dysfunction and autoimmunity. PNP deficiency has never been reported from Saudi Arabia or in patients with an Arabic ethnic background. We report on two Saudi girls with PNP deficiency. Both showed severe lymphopenia and neurological involvement. Sequencing of the PNP gene of one girl revealed a novel missense mutation Pro146>Leu in exon 4 due to a change in the codon from CCT>CTT. Expression of PNP (146L) cDNA in E coli indicated that the mutation greatly reduced, but did not completely eliminate PNP activity. (author)

  17. Growth dynamics of SiGe nanowires by the Vapour Liquid Solid method and its impact on SiGe/Si axial heterojunction abruptness.

    Science.gov (United States)

    Pura, Jose Luis; Periwal, Priyanka; Baron, Thierry; Jimenez, Juan

    2018-06-05

    The Vapour Liquid Solid (VLS) method is by far the most extended procedure for bottom-up nanowire growth. This method also allows for the manufacture of nanowire axial heterojunctions in a straightforward way. To do this, during the growth process the precursor gases are switched on/off to obtain the desired change in the nanowire composition. Using this technique axially heterostructured nanowires can be grown, which are crucial for the fabrication of electronic and optoelectronic devices. SiGe/Si nanowires are compatible with Complementary Metal Oxide Semiconductor (CMOS) technology, this improves their versatility and the possibility of integration with the current electronic technologies. Abrupt heterointerfaces are fundamental for the development and correct operation of electronic and optoelectronic devices. Unfortunately, VLS growth of SiGe/Si heterojunctions does not provide abrupt transitions because of the high solubility of group IV semiconductors in Au, with the corresponding reservoir effect that precludes the growth of sharp interfaces. In this work, we studied the growth dynamics of SiGe/Si heterojunctions based on already developed models for VLS growth. A composition map of the Si-Ge-Au liquid alloy is proposed to better understand the impact of the growing conditions on the nanowire growth process and the heterojunction formation. The solution of our model provides heterojunction profiles in good agreement with experimental measurements. Finally, the in-depth study of the composition map provides a practical approach to reduce drastically the heterojunction abruptness by reducing the Si and Ge concentrations in the catalyst droplet. This converges with previous approaches that use catalysts aiming to reduce the solubility of the atomic species. This analysis opens new paths to reduce the heterojunction abruptness using Au catalysts, but the model can be naturally extended to other catalysts and semiconductors. © 2018 IOP Publishing Ltd.

  18. DC-Motor Drive Encompassing SiGe Asynchronous Control Electronics for Ultra-Wide (-230 °C to +130 °C) Environments, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — In Phase I, the research team formed by APEI, Inc. and University of Arkansas proved the feasibility of developing ultra-wide temperature (-230oC to +130 oC) motor...

  19. The Bacillus subtilis yaaH Gene Is Transcribed by SigE RNA Polymerase during Sporulation, and Its Product Is Involved in Germination of Spores

    OpenAIRE

    Kodama, Takeko; Takamatsu, Hiromu; Asai, Kei; Kobayashi, Kazuo; Ogasawara, Naotake; Watabe, Kazuhito

    1999-01-01

    The expression of 21 novel genes located in the region from dnaA to abrB of the Bacillus subtilis chromosome was analyzed. One of the genes, yaaH, had a predicted promoter sequence conserved among SigE-dependent genes. Northern blot analysis revealed that yaaH mRNA was first detected from 2 h after the cessation of logarithmic growth (T2) of sporulation in wild-type cells and in spoIIIG (SigG−) and spoIVCB (SigK−) mutants but not in spoIIAC (SigF−) and spoIIGAB (SigE−) mutants. The transcript...

  20. The Bacillus subtilis yaaH Gene Is Transcribed by SigE RNA Polymerase during Sporulation, and Its Product Is Involved in Germination of Spores

    Science.gov (United States)

    Kodama, Takeko; Takamatsu, Hiromu; Asai, Kei; Kobayashi, Kazuo; Ogasawara, Naotake; Watabe, Kazuhito

    1999-01-01

    The expression of 21 novel genes located in the region from dnaA to abrB of the Bacillus subtilis chromosome was analyzed. One of the genes, yaaH, had a predicted promoter sequence conserved among SigE-dependent genes. Northern blot analysis revealed that yaaH mRNA was first detected from 2 h after the cessation of logarithmic growth (T2) of sporulation in wild-type cells and in spoIIIG (SigG−) and spoIVCB (SigK−) mutants but not in spoIIAC (SigF−) and spoIIGAB (SigE−) mutants. The transcription start point was determined by primer extension analysis; the −10 and −35 regions are very similar to the consensus sequences recognized by SigE-containing RNA polymerase. A YaaH-His tag fusion encoded by a plasmid with a predicted promoter for the yaaH gene was produced from T2 of sporulation in a B. subtilis transformant and extracted from mature spores, indicating that the yaaH gene product is a spore protein. Inactivation of the yaaH gene by insertion of an erythromycin resistance gene did not affect vegetative growth or spore resistance to heat, chloroform, and lysozyme. The germination of yaaH mutant spores in a mixture of l-asparagine, d-glucose, d-fructose, and potassium chloride was almost the same as that of wild-type spores, but the mutant spores were defective in l-alanine-stimulated germination. These results suggest that yaaH is a novel gene encoding a spore protein produced in the mother cell compartment from T2 of sporulation and that it is required for the l-alanine-stimulated germination pathway. PMID:10419957

  1. Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

    Czech Academy of Sciences Publication Activity Database

    Klenovský, P.; Brehm, M.; Křápek, Vlastimil; Lausecker, E.; Munzar, D.; Hackl, F.; Steiner, H.; Fromherz, T.; Bauer, G.; Humlíček, J.

    2012-01-01

    Roč. 86, č. 11 (2012), "115305-1"-"115305-8" ISSN 1098-0121 Institutional research plan: CEZ:AV0Z10100521 Keywords : semiconductors nanocrystals * cyclotron resonance * uniaxial-stress * band alignment * Ge islands * germanium * wells * silicon * Si(001) * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.767, year: 2012 http://prb.aps.org/abstract/PRB/v86/i11/e115305

  2. Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

    International Nuclear Information System (INIS)

    Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.

    2004-01-01

    Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix

  3. A Wide-Band High-Gain Compact SIS Receiver Utilizing a 300-μW SiGe IF LNA

    Science.gov (United States)

    Montazeri, Shirin; Grimes, Paul K.; Tong, Cheuk-Yu Edward; Bardin, Joseph C.

    2017-06-01

    Low-power low-noise amplifiers integrated with superconductor-insulator-superconductor (SIS) mixers are required to enable implementation of large-scale focal plane arrays. In this work, a 220-GHz SIS mixer has been integrated with a high-gain broad-band low-power IF amplifier into a compact receiver module. The low noise amplifier (LNA) was specifically designed to match to the SIS output impedance and contributes less than 7 K to the system noise temperature over the 4-8 GHz IF frequency range. A receiver noise temperature of 30-45 K was measured for a local oscillator frequency of 220 GHz over an IF spanning 4-8 GHz. The LNA power dissipation was only 300-μW. To the best of the authors' knowledge, this is the lowest power consumption reported for a high-gain wide-band LNA directly integrated with an SIS mixer.

  4. High Stability Induced by the TiN/Ti Interlayer in Three-Dimensional Si/Ge Nanorod Arrays as Anode in Micro Lithium Ion Battery.

    Science.gov (United States)

    Yue, Chuang; Yu, Yingjian; Wu, Zhenguo; Sun, Shibo; He, Xu; Li, Juntao; Zhao, Libo; Wu, Suntao; Li, Jing; Kang, Junyong; Lin, Liwei

    2016-03-01

    Three-dimensional (3D) Si/Ge-based micro/nano batteries are promising lab-on-chip power supply sources because of the good process compatibility with integrated circuits and Micro/Nano-Electro-Mechanical System technologies. In this work, the effective interlayer of TiN/Ti thin films were introduced to coat around the 3D Si nanorod (NR) arrays before the amorphous Ge layer deposition as anode in micro/nano lithium ion batteries, thus the superior cycling stability was realized by reason for the restriction of Si activation in this unique 3D matchlike Si/TiN/Ti/Ge NR array electrode. Moreover, the volume expansion properties after the repeated lithium-ion insertion/extraction were experimentally investigated to evidence the superior stability of this unique multilayered Si composite electrode. The demonstration of this wafer-scale, cost-effective, and Si-compatible fabrication for anodes in Li-ion micro/nano batteries provides new routes to configurate more efficient 3D energy storage systems for micro/nano smart semiconductor devices.

  5. Surface roughening of undoped and in situ B-doped SiGe epitaxial layers deposited by using reduced pressure chemical vapor deposition

    Science.gov (United States)

    Kim, Youngmo; Park, Jiwoo; Sohn, Hyunchul

    2018-01-01

    Si1- x Ge x (:B) epitaxial layers were deposited by using reduced pressure chemical vapor deposition with SiH4, GeH4, and B2H6 source gases, and the dependences of the surface roughness of undoped Si1- x Ge x on the GeH4 flow rate and of Si1- x Ge x :B on the B2H6 flow rate were investigated. The root-mean-square (RMS) roughness value of the undoped Si1- x Ge x at constant thickness increased gradually with increasing Ge composition, resulting from an increase in the amplitude of the wavy surface before defect formation. At higher Ge compositions, the residual strain in Si1- x Ge x significantly decreased through the formation of defects along with an abrupt increase in the RMS roughness. The variation of the surface roughness of Si1- x Ge x :B depended on the boron (B) concentration. At low B concentrations, the RMS roughness of Si1- x Ge x remained constant regardless of Ge composition, which is similar to that of undoped Si1- x Ge x . However, at high B concentrations, the RMS roughness of Si1- x Ge x :B increased greatly due to B islanding. In addition, at very high B concentrations ( 9.9 at%), the RMS roughness of Si1- x Ge x :B decreased due to non-epitaxial growth.

  6. Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses

    Science.gov (United States)

    O'Reilly, Andrew J.; Quitoriano, Nathaniel

    2018-01-01

    Uniaxially strained Si1-xGex channels have been proposed as a solution for high mobility channels in next-generation MOSFETS to ensure continued device improvement as the benefits from further miniaturisation are diminishing. Previously proposed techniques to deposit uniaxially strained Si1-xGex epilayers on Si (0 0 1) substrates require multiple deposition steps and only yielded thin strips of uniaxially strained films. A lateral liquid-phase epitaxy (LLPE) technique was developed to deposit a blanket epilayer of asymmetrically strained Si97.4Ge2.6 on Si in a single step, where the epilayer was fully strained in the growth direction and 31% strain-relaxed in the orthogonal direction. The LLPE technique promoted the glide of misfit dislocations, which nucleated in a region with an orthogonal misfit dislocation network, into a region where the dislocation nucleation was inhibited. This created an array of parallel misfit dislocations which were the source of the asymmetric strain. By observing the thicknesses at which the dislocation network transitions from orthogonal to parallel and at which point dislocation glide is exhausted, the separate critical thicknesses for dislocation nucleation and dislocation glide can be determined.

  7. A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology and considerations for SFDR performance

    CSIR Research Space (South Africa)

    Reddy, Reeshen

    2015-04-01

    Full Text Available the clock feedthrough effect. A novel current source cell is implemented that comprises heterojunction bipolar transistor current switches, negative-channel metal-oxide semiconductor (NMOS) cascode and NMOS current source to overcome distortion...

  8. Radiation-Hardening of Best-In-Class SiGe Mixed-Signal and RF Electronics for Ultra-Wide Temperature Range, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Innovative, reliable, low-power, and low-noise electronics that can operate over a wide temperature range and high radiation are critical for future NASA missions....

  9. MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

    Science.gov (United States)

    2012-09-01

    its effect on the optical beam. Computer Tunable optical source Detectors Test MSM detector Lock-in- amplifier Multiplexer Transimpedance ... amplifier Three-way beam splitter L3 sample L1 Light source L4 L2 Reference Detector Reflectance Detector

  10. Analysis of geochemical "twins" A1/Ga and Si/Ge in rock-forming silicate minerals in granitoides using LA-ICP-MS

    Czech Academy of Sciences Publication Activity Database

    Gardenová, N.; Kanický, V.; Breiter, Karel; Vaculovič, T.

    2011-01-01

    Roč. 75, č. 3 (2011), s. 894-894 ISSN 0026-461X. [Goldschmidt Conference. 14.08.2011-19.08.2011, Prague] R&D Projects: GA ČR GAP210/10/1309 Institutional research plan: CEZ:AV0Z30130516 Keywords : granite * galium * germanicum * trace elements * LA- ICP -MS Subject RIV: DD - Geochemistry http://docserver.ingentaconnect.com/deliver/connect/minsoc/0026461x/v75n3/s7.pdf?expires=1325850744&id=66551597&titleid=895&accname=Geological+institute+ASCR+library&checksum=1BA3818E3E01A68BC628566398A6E8CA

  11. Performance of a Composite Thermoelectric Generator with Different Arrangements of SiGe, BiTe and PbTe under Different Configurations

    Directory of Open Access Journals (Sweden)

    Alexander Vargas-Almeida

    2015-10-01

    Full Text Available In this study, we analyze the role of the thermoelectric (TE properties, namely Seebeck coefficient α, thermal conductivity κ and electrical resistivity ρ, of three different materials in a composite thermoelectric generator (CTEG under different configurations. The CTEG is composed of three thermoelectric modules (TEMs: (1 two TEMs thermally and electrically connected in series (SC; (2 two branches of TEMs thermally and electrically connected in parallel (PSC; and (3 three TEMs thermally and electrically connected in parallel (TEP. In general, each of the TEMs have different thermoelectric parameters, namely a Seebeck coefficient α, a thermal conductance K and an electrical resistance R. Following the framework proposed recently, we show the effect of: (1 the configuration; and (2 the arrangements of TE materials on the corresponding equivalent figure of merit Zeq and consequently on the maximum power Pmax and efficiency η of the CTEG. Firstly, we consider that the whole system is formed of the same thermoelectric material (α1,K1,R1 = α2,K2,R2 = α3,K3,R3 and, secondly, that the whole system is constituted by only two different thermoelectric materials Entropy 2015, 17 7388 (αi,Ki,Ri ≠ αj ,Kj ,Rj 6= αl,Kl,Rl, where i, j, l can be 1, 2 or 3. In this work, we propose arrangements of TEMs, which clearly have the advantage of a higher thermoelectric figure of merit value compared to a conventional thermoelectric module. A corollary about the Zeq-max for CTEG is obtained as a result of these considerations. We suggest an optimum configuration.

  12. Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-κ Dielectrics and SiGe Epitaxial Substrates

    Science.gov (United States)

    Hou, Zhao-Zhao; Wang, Gui-Lei; Xiang, Jin-Juan; Yao, Jia-Xin; Wu, Zhen-Hua; Zhang, Qing-Zhu; Yin, Hua-Xiang

    2017-08-01

    Not Available Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02303007, the National Key Research and Development Program of China under Grant No 2016YFA0301701, and the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2016112.

  13. Silicon germanium (SiGe) radioisotope thermoelectric generator (RTG) program for space missions. Nineteenth technical progress report, December 1980-January 1981

    International Nuclear Information System (INIS)

    1981-01-01

    Work accomplished during the reporting period on the DOE Silicon Germanium RTG Program, Contract DE-AC01-79ET-32043 is described. This program consists of the following three tasks: multi-hundred watt RTG for the Galileo probe mission; reestablishment of silicon germanium unicouple capability; and general purpose heat source RTG for the international solar polar and Galileo orbiter missions. Details of program progress for each task, including a milestone schedule and a discussion of current problem areas (if any) are presented

  14. 77 FR 313 - Self-Regulatory Organizations; NYSE Arca, Inc.; Notice of Filing and Immediate Effectiveness of...

    Science.gov (United States)

    2012-01-04

    ... designated as a PNP Plus Order that remains unexecuted and would otherwise lock or cross the best protected... below (above) the Lower (Upper) Price Band, as defined in the Plan, the automatic re-pricing of PNP Plus...

  15. Performance Evaluation of Bulk Liquid Membrane Technique on p-Nitrophenol Removal from Aqueous Solution

    Directory of Open Access Journals (Sweden)

    K. Pourkhanali

    2018-03-01

    Full Text Available The transport of p-nitrophenol (PNP through a bulk liquid membrane (BLM was investigated to evaluate the effect of different experimental conditions on PNP partitioning behavior. The influence of solvent type, different salts in feed phase, the feed phase pH and PNP concentration in feed phase on transport efficiency of PNP through the BLM were studied. The results indicated that the highest removal efficiency of PNP was observed for 80 % xylene + 20 % toluene as liquid membrane, Na2SO4 as salt in feed phase, in the acidic feed phase and in 150 min. The effect of initial concentration of PNP on the efficiency of the separation PNP showed that the increase in initial concentration up to 350 ppm had positive effect, and more than 350 ppm had negative effect on the PNP removal behavior. Also, pertraction in BLM systems were described by a kinetic model of two consecutive irreversible first order chemical reactions.

  16. Paraneoplastic pemphigus: A retrospective case series in a referral center in northern Taiwan

    Directory of Open Access Journals (Sweden)

    Yung-Tsu Cho

    2014-03-01

    Conclusion: PNP in Taiwanese patients has a high association with Castleman’s disease or malignant thymoma. Complete laboratory examinations and thorough investigations for occult neoplasms are mandatory to establish a diagnosis in patients with clinical suspicions of PNP.

  17. Purification and Properties of a Novel Thermostable Galacto-Oligosaccharide-Producing (beta)-Galactosidase from Sterigmatomyces elviae CBS8119

    OpenAIRE

    Onishi, N.; Tanaka, T.

    1996-01-01

    Volume 61, no. 11, p. 4028, column 1, line 37: "p-nitrophenyl-(beta)-d-galactopyranoside" should read "p-nitrophenyl-(beta)-d-glucopyranoside." Page 4028, column 1, line 38: "p-nitrophenyl-(beta)-l-arabinopyranoside" should read "p-nitrophenyl-(alpha)-l-arabinopyranoside." Page 4028, column 2, Table 2, last line: "PNP-(beta)-l-arabinopyranoside" should read "PNP-(alpha)-l-arabinopyranoside." Page 4028, column 2, Table 2, footnote a, line 4: "PNP-(alpha)-l-arabinopyranoside" should read "PNP-(...

  18. Follicular non-Hodgkin's lymphoma with refractory paraneoplastic pemphigus : Case report with review of novel treatment modalities

    NARCIS (Netherlands)

    Van Rossum, MM; Verhaegen, NTM; Jonkman, MF; Mackenzie, MA; Koster, A; Van der Valk, PGM; Span, LFR

    2004-01-01

    In this paper a patient with a non-Hodgkin's lymphoma (NHL) and paraneoplastic pemphigus (PNP) is described. PNP is a very rare, painful mucocutaneous intraepithelial blistering disease associated with occult or confirmed malignancy. Patients with PNP show severe, progressive mucocutaneous disease

  19. Characterization of para-Nitrophenol-Degrading Bacterial Communities in River Water by Using Functional Markers and Stable Isotope Probing.

    Science.gov (United States)

    Kowalczyk, Agnieszka; Eyice, Özge; Schäfer, Hendrik; Price, Oliver R; Finnegan, Christopher J; van Egmond, Roger A; Shaw, Liz J; Barrett, Glyn; Bending, Gary D

    2015-10-01

    Microbial degradation is a major determinant of the fate of pollutants in the environment. para-Nitrophenol (PNP) is an EPA-listed priority pollutant with a wide environmental distribution, but little is known about the microorganisms that degrade it in the environment. We studied the diversity of active PNP-degrading bacterial populations in river water using a novel functional marker approach coupled with [(13)C6]PNP stable isotope probing (SIP). Culturing together with culture-independent terminal restriction fragment length polymorphism analysis of 16S rRNA gene amplicons identified Pseudomonas syringae to be the major driver of PNP degradation in river water microcosms. This was confirmed by SIP-pyrosequencing of amplified 16S rRNA. Similarly, functional gene analysis showed that degradation followed the Gram-negative bacterial pathway and involved pnpA from Pseudomonas spp. However, analysis of maleylacetate reductase (encoded by mar), an enzyme common to late stages of both Gram-negative and Gram-positive bacterial PNP degradation pathways, identified a diverse assemblage of bacteria associated with PNP degradation, suggesting that mar has limited use as a specific marker of PNP biodegradation. Both the pnpA and mar genes were detected in a PNP-degrading isolate, P. syringae AKHD2, which was isolated from river water. Our results suggest that PNP-degrading cultures of Pseudomonas spp. are representative of environmental PNP-degrading populations. Copyright © 2015, American Society for Microbiology. All Rights Reserved.

  20. Effects of the pneumoperitoneum and Trendelenburg position on respiratory mechanics in the rats by the end-inflation occlusion method

    Directory of Open Access Journals (Sweden)

    Alessandro Rubini

    2012-01-01

    Conclusion: The cranial displacement of the diaphgram occurring as a consequence of Pnp and/or Tnd, for example during laparoscopic surgical procedures, causes an increment of respiratory system elastance and viscoelastic resistance. The analysis of addictive effects show that these are more likely to occur when Pnp + Tnd are compared to isolated Tnd rather than to isolated Pnp.

  1. Genes involved in degradation of para-nitrophenol are differentially arranged in form of non-contiguous gene clusters in Burkholderia sp. strain SJ98.

    Directory of Open Access Journals (Sweden)

    Surendra Vikram

    Full Text Available Biodegradation of para-Nitrophenol (PNP proceeds via two distinct pathways, having 1,2,3-benzenetriol (BT and hydroquinone (HQ as their respective terminal aromatic intermediates. Genes involved in these pathways have already been studied in different PNP degrading bacteria. Burkholderia sp. strain SJ98 degrades PNP via both the pathways. Earlier, we have sequenced and analyzed a ~41 kb fragment from the genomic library of strain SJ98. This DNA fragment was found to harbor all the lower pathway genes; however, genes responsible for the initial transformation of PNP could not be identified within this fragment. Now, we have sequenced and annotated the whole genome of strain SJ98 and found two ORFs (viz., pnpA and pnpB showing maximum identity at amino acid level with p-nitrophenol 4-monooxygenase (PnpM and p-benzoquinone reductase (BqR. Unlike the other PNP gene clusters reported earlier in different bacteria, these two ORFs in SJ98 genome are physically separated from the other genes of PNP degradation pathway. In order to ascertain the identity of ORFs pnpA and pnpB, we have performed in-vitro assays using recombinant proteins heterologously expressed and purified to homogeneity. Purified PnpA was found to be a functional PnpM and transformed PNP into benzoquinone (BQ, while PnpB was found to be a functional BqR which catalyzed the transformation of BQ into hydroquinone (HQ. Noticeably, PnpM from strain SJ98 could also transform a number of PNP analogues. Based on the above observations, we propose that the genes for PNP degradation in strain SJ98 are arranged differentially in form of non-contiguous gene clusters. This is the first report for such arrangement for gene clusters involved in PNP degradation. Therefore, we propose that PNP degradation in strain SJ98 could be an important model system for further studies on differential evolution of PNP degradation functions.

  2. Plant natriuretic peptides are apoplastic and paracrine stress response molecules

    KAUST Repository

    Wang, Yuhua

    2011-04-07

    Higher plants contain biologically active proteins that are recognized by antibodies against human atrial natriuretic peptide (ANP). We identified and isolated two Arabidopsis thaliana immunoreactive plant natriuretic peptide (PNP)-encoding genes, AtPNP-A and AtPNP-B, which are distantly related members of the expansin superfamily and have a role in the regulation of homeostasis in abiotic and biotic stresses, and have shown that AtPNP-A modulates the effects of ABA on stomata. Arabidopsis PNP (PNP-A) is mainly expressed in leaf mesophyll cells, and in protoplast assays we demonstrate that it is secreted using AtPNP-A:green fluorescent protein (GFP) reporter constructs and flow cytometry. Transient reporter assays provide evidence that AtPNP-A expression is enhanced by heat, osmotica and salt, and that AtPNP-A itself can enhance its own expression, thereby generating a response signature diagnostic for paracrine action and potentially also autocrine effects. Expression of native AtPNP-A is enhanced by osmotica and transiently by salt. Although AtPNP-A expression is induced by salt and osmotica, ABA does not significantly modulate AtPNP-A levels nor does recombinant AtPNP-A affect reporter expression of the ABA-responsive RD29A gene. Together, these results provide experimental evidence that AtPNP-A is stress responsive, secreted into the apoplastic space and can enhance its own expression. Furthermore, our findings support the idea that AtPNP-A, together with ABA, is an important component in complex plant stress responses and that, much like in animals, peptide signaling molecules can create diverse and modular signals essential for growth, development and defense under rapidly changing environmental conditions. © 2011 The Author.

  3. Analysis of the Nonlinear Characteristics of Microwave Power Heterojunction Bipolar Transistors and Optoelectronic Integrated Circuits.

    Science.gov (United States)

    Samelis, Apostolos

    A physical basis for large-signal HBT modeling was established in terms of transit times using a Monte Carlo analysis of AlGaAs/GaAs and GaInP/GaAs designs. Static carriers located in the collector-subcollector interface were found to prohibit accurate evaluation of transit times from electron velocity profiles. These carriers also influence the bias dependence of device capacitances. Analytical parameter extraction techniques for DC, thermal and high frequency HBT parameters were developed and applied to HBT large-signal modeling. The "impedance block" conditioned optimization technique was introduced to facilitate parameter extraction. Physical analysis of HBTs by means of Volterra Series techniques showed that C_{bc } dominates nonlinear distortion in high gain amplifiers. Designs with that C_{bc }-V_{cb} characteristics i.e. p -n collector HBTs lead to more than 10 dB IP3 improvement over n-collector HBTs. Nonlinear current cancellation was found to improve intermodulation distortion. A Gummel -Poon-based HBT large-signal model incorporating self-heating effects was developed and applied to AlGaAs/GaAs HBTs. Maximum power drive was shown to occur using constant V _{be} father than I_ {b} bias. The device temperature of constant I_{b} biased HBTs decreases at increased rf-drive levels ensuring in this case safer device operation. A large-signal model incorporating "soft" -breakdown effects typical of InP/InGaAs HBTs was developed and found to model succesfully the power characteristics of OEICs built with them. The effective large-signal transimpedance of a cascode transimpedance preamplifier was evaluated using this model and found to degrade by 3dBOmega for a variation of P_{in} from -65 to -5 dBm. Self-bias of individual transistors was studied and found to be related to variations of the amplifier characteristics at higher rf-drive levels. The power characteristics of CE and CB AlGaAs/GaAs HBTs were investigated using an on -wafer source/load pull setup

  4. Characterization of nanocrystalline silicon germanium film and ...

    African Journals Online (AJOL)

    The nanocrystalline silicon-germanium films (Si/Ge) and Si/Ge nanotubes have low band gaps and high carrier mobility, thus offering appealing potential for absorbing gas molecules. Interaction between hydrogen molecules and bare as well as functionalized Si/Ge nanofilm and nanotube was investigated using Monte ...

  5. High-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors

    Science.gov (United States)

    Ahmari, David Abbas

    Heterojunction bipolar transistors (HBTs) have demonstrated the high-frequency characteristics as well as the high linearity, gain, and power efficiency necessary to make them attractive for a variety of applications. Specific applications for which HBTs are well suited include amplifiers, analog-to-digital converters, current sources, and optoelectronic integrated circuits. Currently, most commercially available HBT-based integrated circuits employ the AlGaAs/GaAs material system in applications such as a 4-GHz gain block used in wireless phones. As modern systems require higher-performance and lower-cost devices, HBTs utilizing the newer, InGaP/GaAs and InP/InGaAs material systems will begin to dominate the HBT market. To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and characterization.

  6. Sub-bandgap photonic base current method for characterization of interface states at heterointerfaces in heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Shin, H. T.; Kim, K. H.; Kim, K. S.

    2004-01-01

    In this paper, we propose a novel photonic base current analysis method to characterize the interface states in heterojunction bipolar transistors (HBTs) by using the photonic I-V characteristics under sub-bandgap photonic excitation. For the photonic current-voltage characterization of HBTs, an optical source with a photon energy less than the bandgap energy of Al 0.3 Ga 0.7 As and GaAs (E ph = 0.95 eV g,AlGaAs = 1.79 eV, E g,GaAs = 1.45 eV) is employed for the characterization of the interface states distributed in the photo-responsive energy band (E C - 0.95 ≤ E it ≤ E C ) in emitter-base heterojunction at HBTs. The proposed novel method, which is applied to bipolar junction transistors for the first time, is simple, and an accurate analysis of interface traps in HBTs is possible. By using the photonic base-current and the dark-base-current, we qualitatively analyze the interface trap at the Al 0.3 Ga 0.7 As/GaAs heterojunction interface in HBTs.

  7. Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Ramirez-Garcia, E; Valdez-Monroy, L A; Rodriguez-Mendez, L M; Valdez-Perez, D; Galaz-Larios, M C; Enciso-Aguilar, M A; Zerounian, N; Aniel, F

    2014-01-01

    We describe a reliable technique to separate the different contributions to the apparent base resistance (R B  = R Bx  + X R Bi ) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (R Bx ) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi ) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs. (paper)

  8. Procedure to derive analytical models for microwave noise performances of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Ramirez-Garcia, E; Enciso-Aguilar, M A; Aniel, F P; Zerounian, N

    2013-01-01

    We present a useful procedure to derive simplified expressions to model the minimum noise factor and the equivalent noise resistance of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors (HBTs). An acceptable agreement between models and measurements at operation frequencies up to 18 GHz and at several bias points is demonstrated. The development procedure includes all the significant microwave noise sources of the HBTs. These relations should be useful to model F min and R n for state-of-the-art IV-IV and III–V HBTs. The method is the first step to derive noise analyses formulas valid for operation frequencies near the unitary current gain frequency (f T ); however, to achieve this goal a necessary condition is to have access to HFN measurements up to this frequency regime. (paper)

  9. Cytotoxicity and cellular uptake of tri-block copolymer nanoparticles with different size and surface characteristics

    Directory of Open Access Journals (Sweden)

    Bhattacharjee Sourav

    2012-04-01

    Full Text Available Abstract Background Polymer nanoparticles (PNP are becoming increasingly important in nanomedicine and food-based applications. Size and surface characteristics are often considered to be important factors in the cellular interactions of these PNP, although systematic investigations on the role of surface properties on cellular interactions and toxicity of PNP are scarce. Results Fluorescent, monodisperse tri-block copolymer nanoparticles with different sizes (45 and 90 nm and surface charges (positive and negative were synthesized, characterized and studied for uptake and cytotoxicity in NR8383 and Caco-2 cells. All types of PNP were taken up by the cells. The positive smaller PNP45 (45 nm showed a higher cytotoxicity compared to the positive bigger PNP90 (90 nm particles including reduction in mitochondrial membrane potential (ΔΨm, induction of reactive oxygen species (ROS production, ATP depletion and TNF-α release. The negative PNP did not show any cytotoxic effect. Reduction in mitochondrial membrane potential (ΔΨm, uncoupling of the electron transfer chain in mitochondria and the resulting ATP depletion, induction of ROS and oxidative stress may all play a role in the possible mode of action for the cytotoxicity of these PNP. The role of receptor-mediated endocytosis in the intracellular uptake of different PNP was studied by confocal laser scanning microscopy (CLSM. Involvement of size and charge in the cellular uptake of PNP by clathrin (for positive PNP, caveolin (for negative PNP and mannose receptors (for hydroxylated PNP were found with smaller PNP45 showing stronger interactions with the receptors than bigger PNP90. Conclusions The size and surface characteristics of polymer nanoparticles (PNP; 45 and 90 nm with different surface charges play a crucial role in cellular uptake. Specific interactions with cell membrane-bound receptors (clathrin, caveolin and mannose leading to cellular internalization were observed to depend on

  10. Evaluation of the potential of soil remediation by direct multi-channel pulsed corona discharge in soil.

    Science.gov (United States)

    Wang, Tie Cheng; Qu, Guangzhou; Li, Jie; Liang, Dongli

    2014-01-15

    A novel approach, named multi-channel pulsed corona discharge in soil, was developed for remediating organic pollutants contaminated soil, with p-nitrophenol (PNP) as the model pollutant. The feasibility of PNP degradation in soil was explored by evaluating effects of pulse discharge voltage, air flow rate and soil moisture on PNP degradation. Based on roles of chemically active species and evolution of degradation intermediates, PNP degradation processes were discussed. Experimental results showed that about 89.4% of PNP was smoothly degraded within 60min of discharge treatment at pulse discharge voltage 27kV, soil moisture 5% and air flow rate 0.8Lmin(-1), and the degradation process fitted the first-order kinetic model. Increasing pulse discharge voltage was found to be favorable for PNP degradation, but not for energy yield. There existed appropriate air flow rate and soil moisture for obtaining gratifying PNP degradation efficacy. Roles of radical scavenger and measurement of active species suggested that ozone, H2O2, and OH radicals played very important roles in PNP degradation. CN bond in PNP molecule was cleaved, and the main intermediate products such as hydroquinone, benzoquinone, catechol, phenol, acetic acid, formic acid, oxalic acid, NO2(-) and NO3(-) were identified. Possible pathway of PNP degradation in soil in such a system was proposed. Copyright © 2013 Elsevier B.V. All rights reserved.

  11. Plant natriuretic peptides: Systemic regulators of plant homeostasis and defense that can affect cardiomyoblasts

    KAUST Repository

    Gehring, Christoph A.

    2010-09-01

    Immunologic evidence has suggested the presence of biologically active natriuretic peptide (NPs) hormones in plants because antiatrial NP antibodies affinity purify biologically active plant NPs (PNP). In the model plant, an Arabidopsis thaliana PNP (AtPNP-A) has been identified and characterized. AtPNP-A belongs to a novel class of molecules that share some similarity with the cell wall loosening expansins but do not contain the carbohydrate-binding wall anchor thus suggesting that PNPs and atrial natriuretic peptides are heterologs. AtPNP-A acts systemically, and this is consistent with its localization in the apoplastic extracellular space and the conductive tissue. Furthermore, AtPNP-A signals via the second messenger cyclic guanosine 3′,5′-monophosphate and modulates ion and water transport and homeostasis. It also plays a critical role in host defense against pathogens. AtPNP-A can be classified as novel paracrine plant hormone because it is secreted into the apoplastic space in response to stress and can enhance its own expression. Interestingly, purified recombinant PNP induces apo-ptosis in a dose-dependent manner and was most effective on cardiac myoblast cell lines. Because PNP is mimicking the effect of ANP in some instances, PNP may prove to provide useful leads for development of novel therapeutic NPs. Copyright © 2013 by The American Federation for Medical Research.

  12. Supplemental dietary phytosterin protects against 4-nitrophenol-induced oxidative stress and apoptosis in rat testes

    Directory of Open Access Journals (Sweden)

    Yonghui Zhang

    2015-01-01

    Full Text Available 4-Nitrophenol (PNP, is generally regarded as an environmental endocrine disruptor (EED. Phytosterin (PS, a new feed additive, possesses highly efficient antioxidant activities. The transcription factor, nuclear factor-erythroid 2-related factor 2 (Nrf2, is an important regulator of cellular oxidative stress. Using rats, this study examined PNP-induced testicular oxidative damage and PS-mediated protection against that damage. The generation of MDA and H2O2 upon PNP and PS treatment was milder than that upon treatment with PNP alone. This mitigation was accompanied by partially reversed changes in SOD, CAT, GSH and GSH-Px. Moreover, PNP significantly reduced the caudal epididymal sperm counts and serum testosterone levels. Typical morphological changes were also observed in the testes of PNP-treated animals. PNP reduced the transcriptional level of Nrf2, as evaluated by RT-PCR, but it promoted the dissociation from the Nrf2 complex, stabilization and translocation into the nucleus, as evaluated by immunohistochemistry and Western blotting. In addition, PNP enhanced the Nrf2-dependent gene expression of heme oxygenase-1 (HO-1 and glutamate–cysteine ligase catalytic subunit (GCLC. These results suggest that the Nrf2 pathway plays an important role in PNP-induced oxidative damage and that PS possesses modulatory effects on PNP-induced oxidative damage in rat testes.

  13. Plant natriuretic peptides: Systemic regulators of plant homeostasis and defense that can affect cardiomyoblasts

    KAUST Repository

    Gehring, Christoph A; Irving, Helen R.

    2010-01-01

    Immunologic evidence has suggested the presence of biologically active natriuretic peptide (NPs) hormones in plants because antiatrial NP antibodies affinity purify biologically active plant NPs (PNP). In the model plant, an Arabidopsis thaliana PNP (AtPNP-A) has been identified and characterized. AtPNP-A belongs to a novel class of molecules that share some similarity with the cell wall loosening expansins but do not contain the carbohydrate-binding wall anchor thus suggesting that PNPs and atrial natriuretic peptides are heterologs. AtPNP-A acts systemically, and this is consistent with its localization in the apoplastic extracellular space and the conductive tissue. Furthermore, AtPNP-A signals via the second messenger cyclic guanosine 3′,5′-monophosphate and modulates ion and water transport and homeostasis. It also plays a critical role in host defense against pathogens. AtPNP-A can be classified as novel paracrine plant hormone because it is secreted into the apoplastic space in response to stress and can enhance its own expression. Interestingly, purified recombinant PNP induces apo-ptosis in a dose-dependent manner and was most effective on cardiac myoblast cell lines. Because PNP is mimicking the effect of ANP in some instances, PNP may prove to provide useful leads for development of novel therapeutic NPs. Copyright © 2013 by The American Federation for Medical Research.

  14. The plant natriuretic peptide receptor is a guanylyl cyclase and enables cGMP-dependent signaling

    KAUST Repository

    Turek, Ilona

    2016-03-05

    The functional homologues of vertebrate natriuretic peptides (NPs), the plant natriuretic peptides (PNPs), are a novel class of peptidic hormones that signal via guanosine 3′,5′-cyclic monophosphate (cGMP) and systemically affect plant salt and water balance and responses to biotrophic plant pathogens. Although there is increasing understanding of the complex roles of PNPs in plant responses at the systems level, little is known about the underlying signaling mechanisms. Here we report isolation and identification of a novel Leucine-Rich Repeat (LRR) protein that directly interacts with A. thaliana PNP, AtPNP-A. In vitro binding studies revealed that the Arabidopsis AtPNP-A binds specifically to the LRR protein, termed AtPNP-R1, and the active region of AtPNP-A is sufficient for the interaction to occur. Importantly, the cytosolic part of the AtPNP-R1, much like in some vertebrate NP receptors, harbors a catalytic center diagnostic for guanylyl cyclases and the recombinant AtPNP-R1 is capable of catalyzing the conversion of guanosine triphosphate to cGMP. In addition, we show that AtPNP-A causes rapid increases of cGMP levels in wild type (WT) leaf tissue while this response is significantly reduced in the atpnp-r1 mutants. AtPNP-A also causes cGMP-dependent net water uptake into WT protoplasts, and hence volume increases, whereas responses of the protoplasts from the receptor mutant are impaired. Taken together, our results suggest that the identified LRR protein is an AtPNP-A receptor essential for the PNP-dependent regulation of ion and water homeostasis in plants and that PNP- and vertebrate NP-receptors and their signaling mechanisms share surprising similarities. © 2016 Springer Science+Business Media Dordrecht

  15. A Mononuclear Fe(III) Single Molecule Magnet with a 3/2↔5/2 Spin Crossover

    DEFF Research Database (Denmark)

    Mossin, Susanne L.; Tran, Ba L.; Adhikari, Debashis

    2012-01-01

    The air stable complex [(PNP)FeCl2] (1) (PNP = N[2-P(CHMe2)2-4-methylphenyl]2–), prepared from one-electron oxidation of [(PNP)FeCl] with ClCPh3, displays an unexpected S = 3/2 to S = 5/2 transition above 80 K as inferred by the dc SQUID magnetic susceptibility measurement. The ac SQUID magnetiza...

  16. Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers

    International Nuclear Information System (INIS)

    Liu, Linjie; Xu, Dawei; Jin, Lei; Knoll, Lars; Wirths, Stephan; Nichau, Alexander; Buca, Dan; Mussler, Gregor; Holländer, Bernhard; Zhao, Qing-Tai; Mantl, Siegfried; Feng Di, Zeng; Zhang, Miao

    2013-01-01

    We present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers on compressively strained Si 1−x Ge x substrates and their structural characteristics. The uniform Ni(Al) germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 °C with an optimized Al atomic content of 20 at. %. We find only two kinds of grains in the layer. Both grains show orthogonal relationship with modified B8 type phase. The growth plane is identified to be (10-10)-type plane. After germanosilicidation the strain in the rest Si 1−x Ge x layer is conserved, which provides a great advantage for device application

  17. The effect of phytosterol protects rats against 4-nitrophenol-induced liver damage.

    Science.gov (United States)

    Chen, Jiaqin; Song, Meiyan; Li, Yansen; Zhang, Yonghui; Taya, Kazuyoshi; Li, ChunMei

    2016-01-01

    We investigated the effect of phytosterol (PS) in regard to liver damage induced by 4-nitrophenol (PNP). Twenty rats were randomly divided into four groups (Control, PS, PNP, and PNP+PS). The PS and PNP+PS groups were pretreated with PS for one week. The PNP and PNP+PS groups were injected subcutaneously with PNP for 28 days. The control group received a basal diet and was injected with vehicle alone. Treatment with PS prevented the elevation of the total bilirubin levels, as well as an increase in serum alkaline transaminase and aspartate transaminase, which are typically caused by PNP-induced liver damage. Histopathologically showed that liver damage was significantly mitigated by PS treatment. However, there was no significant change in antioxidant enzyme activities, and the Nrf2-antioxidant system was not activated after treatment with PS. These results suggest that PS could mitigate liver damage induced by PNP, but does not enhance antioxidant capacity. Copyright © 2015 Elsevier B.V. All rights reserved.

  18. Polymeric Nanoparticles Containing Taxanes Enhance Chemoradiotherapeutic Efficacy in Non-small Cell Lung Cancer

    International Nuclear Information System (INIS)

    Jung, Joohee; Park, Sung-Jin; Chung, Hye Kyung; Kang, Hye-Won; Lee, Sa-Won; Seo, Min Hyo; Park, Heon Joo; Song, Si Yeol; Jeong, Seong-Yun; Choi, Eun Kyung

    2012-01-01

    Purpose: To reduce the side effects and improve the efficacy of chemoradiation therapy, taxanes were incorporated into polymeric nanoparticles (PNP), and their synergic effect on radiation therapy in non-small cell lung cancer was evaluated. Methods and Materials: The properties of PNP-taxanes were characterized by transmission electron microscopy and dynamic light scattering. The chemoradiotherapeutic efficacy of PNP-taxanes was determined by clonogenic assay, cellular morphology, and flow cytometry in A549 cells. In mice bearing A549-derived tumors, the tumor growth delay was examined after the treatment of PNP-taxanes and/or ionizing radiation (IR). Results: The PNP-taxanes were found to be approximately 45 nm in average diameter and to have high solubility in water. They showed the properties of active internalization into cells and preserved the anticancer effect of free taxanes. The survival fraction of A549 cells by clonogenic assay was significantly reduced in the group receiving combined treatment of PNP-taxanes and IR. In addition, in vivo radiotherapeutic efficacy was markedly enhanced by the intravenous injection of PNP-taxanes into the xenograft mice. Conclusions: We have demonstrated the feasibility of PNP-taxanes to enhance the efficacy of chemoradiation therapy. These results suggest PNP-taxanes can hold an invaluable and promising position in treating human cancers as a novel and effective chemoradiation therapy agent.

  19. Modular Open Network ARCHitecture (MONARCH): Transitioning plug-and-play to aerospace

    Science.gov (United States)

    Martin, M.; Lyke, J.

    The Air Force Research Laboratory (AFRL) developed an initial plug-and-play (PnP) capability for spacecraft, similar to USB on personal computers, which better defines hardware and software interfaces and incorporates self-discovery and auto-configuration in order to simplify spacecraft development and reduce cost and schedule. PnP technology was matured through a suborbital PnP flight experiment in September 2007 and a secondary Spacecraft Avionics Experiment (SAE) payload on the TacSat-3 satellite, which launched in May 2009. AFRL developed and submitted a complete set of PnP standards through the American Institute of Aeronautics and Astronautics (AIAA) in 2011. Space electronics to adapt existing satellite components and implement full PnP on satellites in accordance with these AFRL standards was independently developed in alternate hardware implementations by Goodrich Corp under AFRL and by Northrop Grumman under Operationally Responsive Space (ORS). In 2011, AFRL conducted a cost-benefit analysis of PnP and assembled a collaborative review board (CRB) in Sept 2011 to evaluate PnP. This CRB was comprised of representatives from Space and Missiles Center (SMC), National Reconnaissance Organization (NRO), Naval Research Laboratory (NRL), John Hopkins University (JHU) Applied Physics Laboratory (APL), The Aerospace Corporation, and several large commercial and DOD satellite developers. This CRB laid out a transition path to develop and implement PnP standards for implementation in large (> 1000 kg) DOD and commercial satellites. Transition of PnP technology into operational systems continues in PnP architecture studies for SMC, PnP products from multiple space industry vendors, commercial implementations of PnP, and the Northrop Grumman ORS-2 spacecraft currently project to fly in 2014-2015. This paper provides details related to development of PnP technology, AFRL's cost-benefit analysis of PnP, recommendations of the PnP CRB, and on-going efforts to mature - nd

  20. Estrogenic and anti-androgenic activities of 4-nitrophenol in diesel exhaust particles

    International Nuclear Information System (INIS)

    Li Chunmei; Taneda, Shinji; Suzuki, Akira K.; Furuta, Chie; Watanabe, Gen; Taya, Kazuyoshi

    2006-01-01

    A 4-nitrophenol (PNP) isolated from diesel exhaust particles (DEP) has been identified as a vasodilator. PNP is also a known degradation product of the insecticide parathion. We used uterotrophic and Hershberger assays to study the estrogenic and anti-androgenic activities of PNP in-vivo. In ovariectomized immature female rats injected subcutaneously with 1, 10, or 100 mg/kg PNP daily for 7 days, significant (P < 0.05) increases in uterine weight were seen in only those receiving 10 or 100 mg/kg PNP. Furthermore, in castrated immature male rats implanted with a silastic tube (length, 5 mm) containing crystalline testosterone and injected subcutaneously with 0.01, 0.1, or 1 mg/kg PNP daily for 5 days, those receiving the doses of 0.1 mg/kg showed significant (P < 0.05) weight decreases in seminal vesicles, ventral prostate, levator ani plus bulbocavernosus muscles, and glans penis. Plasma FSH and LH levels did not change in female rats but were significantly (P < 0.05) increased in male rats treated with 0.1 mg/kg PNP. These results clearly demonstrated that PNP has estrogenic and anti-androgenic activities in-vivo. Our results therefore suggest that diesel exhaust emissions and the degradation of parathion can lead to accumulation of PNP in air, water, and soil and thus could have serious deleterious effects on wildlife and human health

  1. CORRELACIÓN ENTRE EL USO DE REDES SOCIALES VIRTUALES Y EL DESARROLLO DE LAS HABILIDADES SOCIALES EN LOS ESTUDIANTES DEL V CICLO DEL NIVEL PRIMARIO DE LAS INSTITUCIONES EDUCATIVAS PNP NEPTALÍ VALDERRAMA AMPUERO, FAP. RAÚL LEGUÍA DRAGO Y EL EJÉRCITO. AREQUIPA, 2014

    OpenAIRE

    BARRA PINTO, PAMELA ROCÍO

    2016-01-01

    LA COMUNICACIÓN LAS REDES SOCIALES VIRTUALES CARACTERÍSTICAS DE LA COMUNICACIÓN VIRTUAL TIPOS DE REDES SOCIALES VIRTUALES USO DE LAS REDES SOCIALES: FRECUENCIA CONTROL DE UNA PERSONA ADULTA DURANTE EL USO DE LAS REDES SOCIALES EL IMPACTO DE LAS REDES SOCIALES EN LA COMUNICACIÓN E INTERACCION SOCIAL LAS HABILIDADES SOCIALES TIPOS DE HABILIDADES SOCIALES VENTAJAS Y DESVENTAJAS DEL DESARROLLO DE LAS HABILIDADES SOCIALES TEORÍAS DE LAS HABILIDADES SOCIALES IMPACTO DEL USO DE LA REDES SOCIALES VIR...

  2. Improved sensitivity to venom specific-immunoglobulin E by spiking with the allergen component in Japanese patients suspected of Hymenoptera venom allergy

    Directory of Open Access Journals (Sweden)

    Naruo Yoshida

    2015-07-01

    Conclusions: The measurement of sIgE following spiking of rVes v 5 and rPol d 5 by conventional testing in Japanese subjects with sIgE against hornet and paper wasp venom, respectively, improved the sensitivity for detecting Hymenoptera venom allergy. Improvement testing for measuring sIgE levels against hornet and paper wasp venom has potential for serologically elucidating Hymenoptera allergy in Japan.

  3. Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

    1997-01-01

    Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge layers followed by patterning into mesa structures. The mesa structures are stain etched resulting in porosification of the Si--Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si--Ge layers produced in a similar manner emitted visible light at room temperature.

  4. Evaluating and improving count-based population inference: A case study from 31 years of monitoring Sandhill Cranes

    Science.gov (United States)

    Gerber, Brian D.; Kendall, William L.

    2017-01-01

    Monitoring animal populations can be difficult. Limited resources often force monitoring programs to rely on unadjusted or smoothed counts as an index of abundance. Smoothing counts is commonly done using a moving-average estimator to dampen sampling variation. These indices are commonly used to inform management decisions, although their reliability is often unknown. We outline a process to evaluate the biological plausibility of annual changes in population counts and indices from a typical monitoring scenario and compare results with a hierarchical Bayesian time series (HBTS) model. We evaluated spring and fall counts, fall indices, and model-based predictions for the Rocky Mountain population (RMP) of Sandhill Cranes (Antigone canadensis) by integrating juvenile recruitment, harvest, and survival into a stochastic stage-based population model. We used simulation to evaluate population indices from the HBTS model and the commonly used 3-yr moving average estimator. We found counts of the RMP to exhibit biologically unrealistic annual change, while the fall population index was largely biologically realistic. HBTS model predictions suggested that the RMP changed little over 31 yr of monitoring, but the pattern depended on assumptions about the observational process. The HBTS model fall population predictions were biologically plausible if observed crane harvest mortality was compensatory up to natural mortality, as empirical evidence suggests. Simulations indicated that the predicted mean of the HBTS model was generally a more reliable estimate of the true population than population indices derived using a moving 3-yr average estimator. Practitioners could gain considerable advantages from modeling population counts using a hierarchical Bayesian autoregressive approach. Advantages would include: (1) obtaining measures of uncertainty; (2) incorporating direct knowledge of the observational and population processes; (3) accommodating missing years of data; and (4

  5. Synthesis and application of iron and zinc doped biochar for removal of p-nitrophenol in wastewater and assessment of the influence of co-existed Pb(II)

    International Nuclear Information System (INIS)

    Wang, Pei; Tang, Lin; Wei, Xue; Zeng, Guangming; Zhou, Yaoyu; Deng, Yaocheng; Wang, Jingjing; Xie, Zhihong; Fang, Wei

    2017-01-01

    Highlights: • Iron and zinc doped biochar was developed with larger specific surface area, new generated hydroxyl groups, and beneficial magnetism compared with pristine biochar. • Fe/Zn-biochar presented good performance both for PNP and Pb(II) adsorption as well as their simultaneous removal. • Mechanism of the enhanced adsorption for low concentrations of co-existing PNP and Pb(II) was proposed. - Abstract: The modification of biochar as a low-cost adsorbent is essential to improve its surface properties and shows great potential in water decontamination. The iron and zinc doped sawdust biochar (Fe/Zn-biochar) with large apparent surface area (518.54 m 2 /g) proposed in this work showed good performance for p-nitrophenol (PNP) removal compared with the pristine biochar (P-biochar), iron doped biochar (Fe-biochar) and zinc doped biochar (Zn-biochar) respectively. The batch experiments turned out that Fe/Zn-biochar exhibited larger PNP adsorption capacity under acidic pH solution, and the ionic strength had slightly negative impact on PNP adsorption. The adsorption kinetics and isotherms were discussed, and the experimental data fitted well the Pseudo-second-order equation and Langmuir model. The thermodynamic study indicated that the PNP adsorption was a spontaneous endothermic process. Furthermore, the simultaneous removal for PNP and Pb(II) by Fe/Zn-biochar was investigated. It implied that the adsorption of PNP and Pb(II) at their low concentration might be enhanced by the complexing-bridging mechanism of PNP and Pb(II) ascribing to the affinity between PNP and hydrophobic sites, in addition to the affinity between Pb(II) and oxygen-containing hydrophilic sites on Fe/Zn-biochar surface. However, the predominated competition between PNP and Pb(II) at their high concentrations with Fe/Zn-biochar suppressed their adsorption.

  6. Removal of high concentration p-nitrophenol in aqueous solution by zero valent iron with ultrasonic irradiation (US–ZVI)

    International Nuclear Information System (INIS)

    Lai, Bo; Chen, Zhaoyu; Zhou, Yuexi; Yang, Ping; Wang, Juling; Chen, Zhiqiang

    2013-01-01

    Highlights: ► High concentration PNP can be reduced into the nontoxic p-aminophenol by US–ZVI. ► High removal efficiency of PNP is resulted from the synergistic reaction of ZVI and US. ► The reaction pathway of PNP in the US–ZVI system is proposed. ► Processing parameters of the US–ZVI system were optimized seriously. -- Abstract: In this study, the US–ZVI system was used to produce the strong reductants including ·H and nascent Fe 2+ ions to eliminate the toxicity of the high concentration p-nitrophenol (PNP) wastewater. The effect of the reactor structure, initial pH, ZVI dosage, ultrasonic power and initial PNP concentration on the removal efficiency of PNP from water was investigated intensively. The results show that a higher removal rate can be obtained by using a conical structure reactor, and the lower initial pH can aid the acceleration of PNP removal rate by using US–ZVI system. Furthermore, the removal efficiencies of PNP increased obviously with the increase of initial ZVI concentration from 0 to 15 g L −1 . Also, the treatment capacity of ZVI was enhanced remarkably by the ultrasonic irradiation, and the US–ZVI system can maintain high treatment efficiency for the high concentration PNP wastewater (500–10,000 mg L −1 ). Meanwhile, the high removal efficiency of PNP was mainly resulted from the synergistic reaction of ZVI and US. At last, the main degradation product (i.e., p-aminophenol) was detected by gas chromatography–mass spectrum (GC–MS). Thus, the reaction pathway of PNP in the US–ZVI system is proposed as a reducing process by the ·H and nascent Fe 2+ ions

  7. Removal of high concentration p-nitrophenol in aqueous solution by zero valent iron with ultrasonic irradiation (US–ZVI)

    Energy Technology Data Exchange (ETDEWEB)

    Lai, Bo, E-mail: laibo1981@163.com [School of Architecture and Environment, Sichuan University, Chengdu 610065 (China); Chen, Zhaoyu [School of Architecture and Environment, Sichuan University, Chengdu 610065 (China); Zhou, Yuexi [Research Center of Water Pollution Control Technology, Chinese Research Academy of Environmental Sciences, Beijing 100012 (China); Yang, Ping [School of Architecture and Environment, Sichuan University, Chengdu 610065 (China); Wang, Juling [Research Center of Water Pollution Control Technology, Chinese Research Academy of Environmental Sciences, Beijing 100012 (China); Chen, Zhiqiang [State Key Laboratory of Urban Water Resource and Environment, Harbin Institute of Technology, Harbin 150090 (China)

    2013-04-15

    Highlights: ► High concentration PNP can be reduced into the nontoxic p-aminophenol by US–ZVI. ► High removal efficiency of PNP is resulted from the synergistic reaction of ZVI and US. ► The reaction pathway of PNP in the US–ZVI system is proposed. ► Processing parameters of the US–ZVI system were optimized seriously. -- Abstract: In this study, the US–ZVI system was used to produce the strong reductants including ·H and nascent Fe{sup 2+} ions to eliminate the toxicity of the high concentration p-nitrophenol (PNP) wastewater. The effect of the reactor structure, initial pH, ZVI dosage, ultrasonic power and initial PNP concentration on the removal efficiency of PNP from water was investigated intensively. The results show that a higher removal rate can be obtained by using a conical structure reactor, and the lower initial pH can aid the acceleration of PNP removal rate by using US–ZVI system. Furthermore, the removal efficiencies of PNP increased obviously with the increase of initial ZVI concentration from 0 to 15 g L{sup −1}. Also, the treatment capacity of ZVI was enhanced remarkably by the ultrasonic irradiation, and the US–ZVI system can maintain high treatment efficiency for the high concentration PNP wastewater (500–10,000 mg L{sup −1}). Meanwhile, the high removal efficiency of PNP was mainly resulted from the synergistic reaction of ZVI and US. At last, the main degradation product (i.e., p-aminophenol) was detected by gas chromatography–mass spectrum (GC–MS). Thus, the reaction pathway of PNP in the US–ZVI system is proposed as a reducing process by the ·H and nascent Fe{sup 2+} ions.

  8. Synthesis and application of iron and zinc doped biochar for removal of p-nitrophenol in wastewater and assessment of the influence of co-existed Pb(II)

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Pei [College of Environmental Science and Engineering, Hunan University, Changsha 410082 (China); Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha 410082, Hunan (China); Tang, Lin, E-mail: tanglin@hnu.edu.cn [College of Environmental Science and Engineering, Hunan University, Changsha 410082 (China); Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha 410082, Hunan (China); Wei, Xue [College of Environmental Science and Engineering, Hunan University, Changsha 410082 (China); Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha 410082, Hunan (China); Zeng, Guangming, E-mail: zgming@hnu.edu.cn [College of Environmental Science and Engineering, Hunan University, Changsha 410082 (China); Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha 410082, Hunan (China); Zhou, Yaoyu [College of Environmental Science and Engineering, Hunan University, Changsha 410082 (China); Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha 410082, Hunan (China); College of Resources and Environment, Hunan Agricultural University, Changsha 410128 (China); Deng, Yaocheng; Wang, Jingjing; Xie, Zhihong; Fang, Wei [College of Environmental Science and Engineering, Hunan University, Changsha 410082 (China); Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha 410082, Hunan (China)

    2017-01-15

    Highlights: • Iron and zinc doped biochar was developed with larger specific surface area, new generated hydroxyl groups, and beneficial magnetism compared with pristine biochar. • Fe/Zn-biochar presented good performance both for PNP and Pb(II) adsorption as well as their simultaneous removal. • Mechanism of the enhanced adsorption for low concentrations of co-existing PNP and Pb(II) was proposed. - Abstract: The modification of biochar as a low-cost adsorbent is essential to improve its surface properties and shows great potential in water decontamination. The iron and zinc doped sawdust biochar (Fe/Zn-biochar) with large apparent surface area (518.54 m{sup 2}/g) proposed in this work showed good performance for p-nitrophenol (PNP) removal compared with the pristine biochar (P-biochar), iron doped biochar (Fe-biochar) and zinc doped biochar (Zn-biochar) respectively. The batch experiments turned out that Fe/Zn-biochar exhibited larger PNP adsorption capacity under acidic pH solution, and the ionic strength had slightly negative impact on PNP adsorption. The adsorption kinetics and isotherms were discussed, and the experimental data fitted well the Pseudo-second-order equation and Langmuir model. The thermodynamic study indicated that the PNP adsorption was a spontaneous endothermic process. Furthermore, the simultaneous removal for PNP and Pb(II) by Fe/Zn-biochar was investigated. It implied that the adsorption of PNP and Pb(II) at their low concentration might be enhanced by the complexing-bridging mechanism of PNP and Pb(II) ascribing to the affinity between PNP and hydrophobic sites, in addition to the affinity between Pb(II) and oxygen-containing hydrophilic sites on Fe/Zn-biochar surface. However, the predominated competition between PNP and Pb(II) at their high concentrations with Fe/Zn-biochar suppressed their adsorption.

  9. A Numerical Comparison of Ionic Multi-Species Diffusion with and without Sorption Hysteresis for Cement-Based Materials

    DEFF Research Database (Denmark)

    Jensen, Mads Mønster; Johannesson, Björn; Geiker, Mette Rica

    2015-01-01

    . The model is an extended version of the Poisson–Nernst–Planck (PNP) system of equations. The PNP extension includes a two-phase vapor and liquid model coupled by a sorption hysteresis function and a chemical equilibrium term. The strong and weak solutions for the equation system are shown, and a finite...

  10. Steady state solution of the Poisson-Nernst-Planck equations

    International Nuclear Information System (INIS)

    Golovnev, A.; Trimper, S.

    2010-01-01

    The exact steady state solution of the Poisson-Nernst-Planck equations (PNP) is given in terms of Jacobi elliptic functions. A more tractable approximate solution is derived which can be used to compare the results with experimental observations in binary electrolytes. The breakdown of the PNP for high concentration and high applied voltage is discussed.

  11. A new assessment model and tool for pediatric nurse practitioners.

    Science.gov (United States)

    Burns, C

    1992-01-01

    This article presents a comprehensive assessment model for pediatric nurse practitioner (PNP) practice that integrates familiar elements of the classical medical history, Gordon's Functional Health Patterns, and developmental fields into one system. This model drives the diagnostic reasoning process toward consideration of a broad range of disease, daily living (nursing diagnosis), and developmental diagnoses, which represents PNP practice better than the medical model does.

  12. Shedding light on the role of photosynthesis in pathogen colonization and host defense

    KAUST Repository

    Garavaglia, Betiana S.; Thomas, Ludivine; Gottig, Natalia; Zimaro, Tamara; Garofalo, Cecilia G.; Gehring, Christoph A; Ottado, Jorgelina

    2010-01-01

    The role of photosynthesis in plant defense is a fundamental question awaiting further molecular and physiological elucidation. To this end we investigated host responses to infection with the bacterial pathogen Xanthomonas axonopodis pv. citri, the pathogen responsible for citrus canker. This pathogen encodes a plant-like natriuretic peptide (XacPNP) that is expressed specifically during the infection process and prevents deterioration of the physiological condition of the infected tissue. Proteomic assays of citrus leaves infected with a XacPNP deletion mutant (DeltaXacPNP) resulted in a major reduction in photosynthetic proteins such as Rubisco, Rubisco activase and ATP synthase as a compared with infection with wild type bacteria. In contrast, infiltration of citrus leaves with recombinant XacPNP caused an increase in these host proteins and a concomitant increase in photosynthetic efficiency as measured by chlorophyll fluorescence assays. Reversion of the reduction in photosynthetic efficiency in citrus leaves infected with DeltaXacPNP was achieved by the application of XacPNP or Citrus sinensis PNP lending support to a case of molecular mimicry. Finally, given that DeltaXacPNP infection is less successful than infection with the wild type, it appears that reducing photosynthesis is an effective plant defense mechanism against biotrophic pathogens.

  13. ORF Alignment: NC_002607 [GENIUS II[Archive

    Lifescience Database Archive (English)

    Full Text Available NC_002607 gi|15790649 >1b22A 10 70 5 63 2e-10 ... pdb|1XU4|A Chain A, Atpase In Compl...ex With Amp-Pnp, Magnesium And Potassium ... Co-F pdb|1T4G|A Chain A, Atpase In Complex With Amp-Pnp ...

  14. ORF Alignment: NC_003551 [GENIUS II[Archive

    Lifescience Database Archive (English)

    Full Text Available NC_003551 gi|20094872 >1b22A 10 70 5 63 2e-10 ... pdb|1XU4|A Chain A, Atpase In Compl...ex With Amp-Pnp, Magnesium And Potassium ... Co-F pdb|1T4G|A Chain A, Atpase In Complex With Amp-Pnp

  15. Shedding light on the role of photosynthesis in pathogen colonization and host defense

    KAUST Repository

    Garavaglia, Betiana S.

    2010-09-01

    The role of photosynthesis in plant defense is a fundamental question awaiting further molecular and physiological elucidation. To this end we investigated host responses to infection with the bacterial pathogen Xanthomonas axonopodis pv. citri, the pathogen responsible for citrus canker. This pathogen encodes a plant-like natriuretic peptide (XacPNP) that is expressed specifically during the infection process and prevents deterioration of the physiological condition of the infected tissue. Proteomic assays of citrus leaves infected with a XacPNP deletion mutant (DeltaXacPNP) resulted in a major reduction in photosynthetic proteins such as Rubisco, Rubisco activase and ATP synthase as a compared with infection with wild type bacteria. In contrast, infiltration of citrus leaves with recombinant XacPNP caused an increase in these host proteins and a concomitant increase in photosynthetic efficiency as measured by chlorophyll fluorescence assays. Reversion of the reduction in photosynthetic efficiency in citrus leaves infected with DeltaXacPNP was achieved by the application of XacPNP or Citrus sinensis PNP lending support to a case of molecular mimicry. Finally, given that DeltaXacPNP infection is less successful than infection with the wild type, it appears that reducing photosynthesis is an effective plant defense mechanism against biotrophic pathogens.

  16. Characterization of p-nitrophenol degrading actinomycetes from ...

    African Journals Online (AJOL)

    Of several Microbial Biotechnology Research Laboratory (MBRL) strains isolated from limestone deposits in Ukhrul, Manipur, India, two strains, (HS4-2 and HS6-1) were found to be promising PNP biodegraders, degrading up to 30 mg/L PNP in neutral basal salts medium (BSM, pH 7.0). Higher strength alkaline BSM (5X ...

  17. Biodegradation of p-nitrophenol using Arthrobacter chlorophenolicus A6 in a novel upflow packed bed reactor.

    Science.gov (United States)

    Sahoo, Naresh Kumar; Pakshirajan, Kannan; Ghosh, Pranab Kumar

    2011-06-15

    A novel packed bed reactor (PBR) was designed with cross flow aeration at multiple ports along the depth to improve the hydrodynamic conditions of the reactor, and the biodegradation efficiency of Arthrobacter chlorophenolicus A6 on p-nitrophenol (PNP) removal in PBR at different PNP loading rates were evaluated. The novel PBR was designed to improve the hydrodynamic features such as mixing time profile (t(m95)), oxygen mass transfer coefficient (k(L)a), and overall gas hold up capacity (ɛ(G)) of the reactor. PNP concentration in the influent was varied between 600 and 1400 mg l(-1) whereas the hydraulic retention time (HRT) in the reactor was varied between 18 and 7.5h. Complete removal of PNP was achieved in the reactor up to a PNP loading rate of 2787 mg l(-1)d(-1). More than 99.9% removal of PNP was achieved in the reactor for an influent concentration of 1400 mg l(-1) and at 18 h HRT. In the present study, PNP was utilized as sole source of carbon and energy by A. chlorophenolicus A6. Furthermore, the bioreactor showed good compatibility in handling shock loading of PNP. Copyright © 2011 Elsevier B.V. All rights reserved.

  18. Biodegradation of p-nitrophenol using Arthrobacter chlorophenolicus A6 in a novel upflow packed bed reactor

    International Nuclear Information System (INIS)

    Sahoo, Naresh Kumar; Pakshirajan, Kannan; Ghosh, Pranab Kumar

    2011-01-01

    A novel packed bed reactor (PBR) was designed with cross flow aeration at multiple ports along the depth to improve the hydrodynamic conditions of the reactor, and the biodegradation efficiency of Arthrobacter chlorophenolicus A6 on p-nitrophenol (PNP) removal in PBR at different PNP loading rates were evaluated. The novel PBR was designed to improve the hydrodynamic features such as mixing time profile (t m95 ), oxygen mass transfer coefficient (k L a), and overall gas hold up capacity (ε G ) of the reactor. PNP concentration in the influent was varied between 600 and 1400 mg l -1 whereas the hydraulic retention time (HRT) in the reactor was varied between 18 and 7.5 h. Complete removal of PNP was achieved in the reactor up to a PNP loading rate of 2787 mg l -1 d -1 . More than 99.9% removal of PNP was achieved in the reactor for an influent concentration of 1400 mg l -1 and at 18 h HRT. In the present study, PNP was utilized as sole source of carbon and energy by A. chlorophenolicus A6. Furthermore, the bioreactor showed good compatibility in handling shock loading of PNP.

  19. Transistor data book

    International Nuclear Information System (INIS)

    1988-03-01

    It introduces how to use this book. It lists transistor data and index, which are Type No, Cross index, Germanium PNP low power transistors, silicon NPN low power transistors, Germanium PNP high power transistors, Switching transistors, transistor arrays, Miscellaneous transistors, types with U.S military specifications, direct replacement transistors, suggested replacement transistors, schematic drawings, outline drawings, device number keys and manufacturer's logos.

  20. A novel biosensor for p-nitrophenol based on an aerobic anode microbial fuel cell.

    Science.gov (United States)

    Chen, Zhengjun; Niu, Yongyan; Zhao, Shuai; Khan, Aman; Ling, Zhenmin; Chen, Yong; Liu, Pu; Li, Xiangkai

    2016-11-15

    P-nitrophenol is one of the most common contaminants in chemical industrial wastewater, and in situ real-time monitoring of PNP cannot be achieved by conventional analytical techniques. Here, a two-chamber microbial fuel cell with an aerobic anode chamber was tested as a biosensor for in situ real-time monitoring of PNP. Pseudomonas monteilii LZU-3, which was used as the biological recognition element, can form a biofilm on the anode electrode using PNP as a sole substrate. The optimal operation parameters of the biosensor were as follows: external resistance 1000Ω, pH 7.8, temperature 30°C, and maximum PNP concentration 50mgL(-1). Under these conditions, the maximum voltages showed a linear relationship with PNP concentrations ranging from 15±5 to 44±4.5mgL(-1). Furthermore, we developed a novel portable device for in situ real-time monitoring of PNP. When the device was applied to measure PNP in wastewater containing various additional aromatic compounds and metal ions, the performance of the biosensor was not affected and the correlation between the maximum voltages and the PNP concentrations ranging from 9±4mgL(-1) to 36 ± 5mgL(-1) was conserved. The results demonstrated that the MFC biosensor provides a rapid and cost-efficient analytical method for real-time monitoring of toxic and recalcitrant pollutants in environmental samples. Copyright © 2016 Elsevier B.V. All rights reserved.

  1. Isolation and Identification of a Brevibacterium linens strain ...

    African Journals Online (AJOL)

    nitrophenol (PNP). Subsequent subcultures in agar, nutrient agar plates and agar slants by streaking led to isolation of pure colonies. The pure culture could degrade up to 300 mg/L PNP in presence of yeast extract. It was Gram positive rods, ...

  2. The health care team. The role of pediatric nurse practitioners as viewed by California pediatricians.

    Science.gov (United States)

    Schoen, E J; Erickson, R J; Barr, G; Allen, H

    1973-01-01

    A single-mailing questionnaire surveyed attitudes of members of District IX, American Academy of Pediatrics (California) toward the role of the pediatric nurse practitioner (pnp). Responses from 568 members (53%) represented a broad range of age, practice type (58% group, 25% solo, 17% "other"), geographic location, and opinion. The most favorable attitudes toward pnp use were expressed by young pediatricians in large-group and "other" categories; least favorable were solo practitioners older than 60 years. Practice type was more important than age. Most respondents expressed the opinion that a pediatrician-pnp team approach would enrich both professions, and that parental acceptance of the pnp was likely; but that pnp use would not reduce costs. Majorities favored the concept of the pnp as part of the practice team but under constant pediatrician surveillance: seeing the patient for part of the visit and participating under supervision in care for minor illness, but not replacing the pediatrician even in well-child care. Some pnps hope for a more independent role on the pediatrician-pnp team. Modification of both pediatrician and pnp ideas appears requisite to a team approach that will satisfy both professional groups and the public.

  3. Positive Skin Test or Specific IgE to Penicillin Does Not Reliably Predict Penicillin Allergy.

    Science.gov (United States)

    Tannert, Line Kring; Mortz, Charlotte Gotthard; Skov, Per Stahl; Bindslev-Jensen, Carsten

    According to guidelines, patients are diagnosed with penicillin allergy if skin test (ST) result or specific IgE (s-IgE) to penicillin is positive. However, the true sensitivity and specificity of these tests are presently not known. To investigate the clinical relevance of a positive ST result and positive s-IgE and to study the reproducibility of ST and s-IgE. A sample of convenience of 25 patients with positive penicillin ST results, antipenicillin s-IgE results, or both was challenged with their culprit penicillin. Further 19 patients were not challenged, but deemed allergic on the basis of a recent anaphylactic reaction or delayed reactions to skin testing. Another sample of convenience of 18 patients, 17 overlapping with the 25 challenged, with initial skin testing and s-IgE (median, 25; range, 3-121), months earlier (T -1 ), was repeat skin tested and had s-IgE measured (T 0 ), and then skin tested and had s-IgE measured 4 weeks later (T 1 ). Only 9 (36%) of 25 were challenge positive. There was an increased probability of being penicillin allergic if both ST result and s-IgE were positive at T 0 . Positive ST result or positive s-IgE alone did not predict penicillin allergy. Among the 18 patients repeatedly tested, 46.2% (12 of 25) of positive ST results at T -1 were reproducibly positive at T 0 . For s-IgE, 54.2% (14 of 24) positive measurements were still positive at T 0 and 7 converted to positive at T 1 . The best predictor for a clinically significant (IgE-mediated) penicillin allergy is a combination of a positive case history with simultaneous positive ST result and s-IgE or a positive challenge result. Copyright © 2017 American Academy of Allergy, Asthma & Immunology. Published by Elsevier Inc. All rights reserved.

  4. Anopheles gambiae Purine Nucleoside Phosphorylase: Catalysis, Structure, and Inhibition

    Energy Technology Data Exchange (ETDEWEB)

    Taylor,E.; Rinaldo-Matthis, A.; Li, L.; Ghanem, M.; Hazleton, K.; Cassera, M.; Almo, S.; Schramm, V.

    2007-01-01

    The purine salvage pathway of Anopheles gambiae, a mosquito that transmits malaria, has been identified in genome searches on the basis of sequence homology with characterized enzymes. Purine nucleoside phosphorylase (PNP) is a target for the development of therapeutic agents in humans and purine auxotrophs, including malarial parasites. The PNP from Anopheles gambiae (AgPNP) was expressed in Escherichia coli and compared to the PNPs from Homo sapiens (HsPNP) and Plasmodium falciparum (PfPNP). AgPNP has kcat values of 54 and 41 s-1 for 2'-deoxyinosine and inosine, its preferred substrates, and 1.0 s-1 for guanosine. However, the chemical step is fast for AgPNP at 226 s-1 for guanosine in pre-steady-state studies. 5'-Deaza-1'-aza-2'-deoxy-1'-(9-methylene)-Immucillin-H (DADMe-ImmH) is a transition-state mimic for a 2'-deoxyinosine ribocation with a fully dissociated N-ribosidic bond and is a slow-onset, tight-binding inhibitor with a dissociation constant of 3.5 pM. This is the tightest-binding inhibitor known for any PNP, with a remarkable Km/Ki* of 5.4 x 107, and is consistent with enzymatic transition state predictions of enhanced transition-state analogue binding in enzymes with enhanced catalytic efficiency. Deoxyguanosine is a weaker substrate than deoxyinosine, and DADMe-Immucillin-G is less tightly bound than DADMe-ImmH, with a dissociation constant of 23 pM for AgPNP as compared to 7 pM for HsPNP. The crystal structure of AgPNP was determined in complex with DADMe-ImmH and phosphate to a resolution of 2.2 Angstroms to reveal the differences in substrate and inhibitor specificity. The distance from the N1' cation to the phosphate O4 anion is shorter in the AgPNP{center_dot}DADMe-ImmH{center_dot}PO4 complex than in HsPNP{center_dot}DADMe-ImmH{center_dot}SO4, offering one explanation for the stronger inhibitory effect of DADMe-ImmH for AgPNP.

  5. Identification of the para-nitrophenol catabolic pathway, and characterization of three enzymes involved in the hydroquinone pathway, in pseudomonas sp. 1-7

    Directory of Open Access Journals (Sweden)

    Zhang Shuangyu

    2012-03-01

    Full Text Available Abstract Background para-Nitrophenol (PNP, a priority environmental pollutant, is hazardous to humans and animals. However, the information relating to the PNP degradation pathways and their enzymes remain limited. Results Pseudomonas sp.1-7 was isolated from methyl parathion (MP-polluted activated sludge and was shown to degrade PNP. Two different intermediates, hydroquinone (HQ and 4-nitrocatechol (4-NC were detected in the catabolism of PNP. This indicated that Pseudomonas sp.1-7 degraded PNP by two different pathways, namely the HQ pathway, and the hydroxyquinol (BT pathway (also referred to as the 4-NC pathway. A gene cluster (pdcEDGFCBA was identified in a 10.6 kb DNA fragment of a fosmid library, which cluster encoded the following enzymes involved in PNP degradation: PNP 4-monooxygenase (PdcA, p-benzoquinone (BQ reductase (PdcB, hydroxyquinol (BT 1,2-dioxygenase (PdcC, maleylacetate (MA reductase (PdcF, 4-hydroxymuconic semialdehyde (4-HS dehydrogenase (PdcG, and hydroquinone (HQ 1,2-dioxygenase (PdcDE. Four genes (pdcDEFG were expressed in E. coli and the purified pdcDE, pdcG and pdcF gene products were shown to convert HQ to 4-HS, 4-HS to MA and MA to β-ketoadipate respectively by in vitro activity assays. Conclusions The cloning, sequencing, and characterization of these genes along with the functional PNP degradation studies identified 4-NC, HQ, 4-HS, and MA as intermediates in the degradation pathway of PNP by Pseudomonas sp.1-7. This is the first conclusive report for both 4-NC and HQ- mediated degradation of PNP by one microorganism.

  6. Polyneuropathy in levodopa-treated Parkinson's patients.

    Science.gov (United States)

    Szadejko, Karol; Dziewiatowski, Krzysztof; Szabat, Krzysztof; Robowski, Piotr; Schinwelski, Michał; Sitek, Emilia; Sławek, Jarosław

    2016-12-15

    Recently published studies show that the prevalence of polyneuropathy (PNP) is higher in patients with Parkinson's disease (PD) than in age-matched controls. Its pathogenesis, however is a matter of controversy. The major hypothesis is the toxicity of high concentrations of homocysteine (Hcy) possibly related to levodopa (LD) therapy. The aim of the present study was to determine the prevalence of PNP, independent of other etiologies, and to determine the relationship to demographic and clinical factors in LD-treated Parkinson's patients. A total of 102 patients (51 patients with PD and 51 sex- and age-matched healthy controls) were enrolled in the study. The presence of any risk factors for PNP, ascertained from the history and laboratory tests, was an exclusion criterion. The Toronto Clinical Scoring System (TCSS) was used for clinical assessment of PNP. The objective assessment was based on electroneurography (ENG) studies in which motor nerves (peroneal and tibial nerves) as well as sensory nerves (sural and superficial peroneal nerves) were bilaterally examined. The severity of the disease was determined using the UPDRS scale (Unified Parkinson's Disease Rating Scale) and the Hoehn-Yahr (H-Y) scale. In the PD group, the clinical and neurophysiological indicators of PNP, manifested as a symmetrical and predominantly sensory axonal neuropathy, were more frequent then in the control group and observed in 43.1% vs. 13.7% and 15.7% vs. 2% of subjects respectively. The presence of PNP correlated with age and the severity of PD. Patients with PD and PNP had a higher level of Hcy as compared to PD patients without PNP, however the difference was not statistically significant. The frequency of PNP in PD patients is higher than in controls. The characteristics and discrepancy between the number of patients with clinical and ENG detected PNP may suggest the small fiber neuropathy (SFN) as the dominant form of neuropathy in PD patients. Copyright © 2016 Elsevier B.V. All

  7. Fluoroscopy of spontaneous breathing is more sensitive than phrenic nerve stimulation for detection of right phrenic nerve injury during cryoballoon ablation of atrial fibrillation.

    Science.gov (United States)

    Linhart, Markus; Nielson, Annika; Andrié, René P; Mittmann-Braun, Erica L; Stöckigt, Florian; Kreuz, Jens; Nickenig, Georg; Schrickel, Jan W; Lickfett, Lars M

    2014-08-01

    Right phrenic nerve palsy (PNP) is a typical complication of cryoballoon ablation of the right-sided pulmonary veins (PVs). Phrenic nerve function can be monitored by palpating the abdomen during phrenic nerve pacing from the superior vena cava (SVC pacing) or by fluoroscopy of spontaneous breathing. We sought to compare the sensitivity of these 2 techniques during cryoballoon ablation for detection of PNP. A total of 133 patients undergoing cryoballoon ablation were monitored with both SVC pacing and fluoroscopy of spontaneous breathing during ablation of the right superior PV. PNP occurred in 27/133 patients (20.0%). Most patients (89%) had spontaneous recovery of phrenic nerve function at the end of the procedure or on the following day. Three patients were discharged with persistent PNP. All PNP were detected first by fluoroscopic observation of diaphragm movement during spontaneous breathing, while diaphragm could still be stimulated by SVC pacing. In patients with no recovery until discharge, PNP occurred at a significantly earlier time (86 ± 34 seconds vs. 296 ± 159 seconds, P < 0.001). No recovery occurred in 2/4 patients who were ablated with a 23 mm cryoballoon as opposed to 1/23 patients with a 28 mm cryoballoon (P = 0.049). Fluoroscopic assessment of diaphragm movement during spontaneous breathing is more sensitive for detection PNP as compared to SVC pacing. PNP as assessed by fluoroscopy is frequent (20.0%) and carries a high rate of recovery (89%) until discharge. Early onset of PNP and use of 23 mm cryoballoon are associated with PNP persisting beyond hospital discharge. © 2014 Wiley Periodicals, Inc.

  8. Musik går direkte i kroppen

    DEFF Research Database (Denmark)

    Christensen, Erik

    2016-01-01

    Erik Christensen, som er musikforsker, indkredser på kort form her, hvad neurovidenskaben foreløbigt kan sige om effekten af at musicere og lytte til musik......Erik Christensen, som er musikforsker, indkredser på kort form her, hvad neurovidenskaben foreløbigt kan sige om effekten af at musicere og lytte til musik...

  9. Agreement between the Skin Prick Test and Specific Serum IgE for Egg White and Cow's Milk Allergens in Young Infant with Atopic Dermatitis

    Directory of Open Access Journals (Sweden)

    Hyeon-Jong Yang

    2014-01-01

    Conclusions: The results of SPT agreed well with those of sIgE. This finding provides a rationale for using SPT, and suggests that SPT can be used along with sIgE to detect food sensitization in young infants with AD.

  10. Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung-Yun [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)], E-mail: seungyun@etri.re.kr; Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Park, Young-Sam; Ryu, Sang-Ouk; Yu, Byoung-Gon; Kim, Sang-Hoon; Lee, Sang-Heung [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)

    2007-10-31

    The effect of the electrical resistivity of a silicon-germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe film as bottom electrodes were investigated. While p-type SiGe bottom electrodes were formed using in situ doping techniques, n-type ones could be made in a different manner where phosphorus atoms diffused from highly doped silicon underlayers to undoped SiGe films. The p-n heterojunction did not form between the p-type GST and n-type SiGe layers, and the semiconduction type of the SiGe alloys did not influence the memory device switching. It was confirmed that an optimum resistivity value existed for memory operation in spite of proportionality of Joule heating to electrical resistivity. The very high resistivity of the SiGe film had no effect on the reduction of reset current, which might result from the resistance decrease of the SiGe alloy at high temperatures.

  11. State of the art

    DEFF Research Database (Denmark)

    Holm-Pedersen, Peder

    2010-01-01

    Den nyeste førskoleforskning kan sige en del om, hvad der kendetegner god kvalitet i daginstitutionerne. Men den kan ikke sige meget om, hvordan man skaber udvikling og kvalitet i en institution, hvor kvaliteten er ringe. Kortlægning af førskoleforskningen efterlyser viden om forandrings- og udvi...

  12. Remission of allergic rhinitis

    DEFF Research Database (Denmark)

    Bødtger, Uffe; Linneberg, Allan

    2004-01-01

    in only 22% of remitting subjects yet was seen significantly more often than in nonremitting subjects (7.4%). Remission of sensitization occurred in 6% (HDM) to 11% (pollen-furry animal) and was predicted on the basis of low s-IgE levels (class 2) at baseline. CONCLUSION: Remission of AR symptoms...... months and s-IgE levels of class 2 or greater against pollen (birch, grass, or mugwort). This was similar for AR to animals (cat or dog) or house dust mites (HDMs). Remission of AR was defined as AR at baseline but no rhinitis symptoms at follow-up and sensitization (s-IgE level class > or =2 at baseline...... and class HDM AR; overall, 17%) and was predicted by low s-IgE levels. Age, sex, asthma, atopic predisposition, age at AR onset, and AR duration had no predictive value. A decrease in s-IgE level was observed...

  13. IgE to recombinant allergens Api m 1, Ves v 1, and Ves v 5 distinguish double sensitization from crossreaction in venom allergy.

    Science.gov (United States)

    Müller, U; Schmid-Grendelmeier, P; Hausmann, O; Helbling, A

    2012-08-01

    Diagnostic tests in patients with Hymenoptera venom allergy are frequently positive to venoms of both honey bee and wasp (Vespula). Component-resolved analysis with recombinant species-specific major allergens (rSSMA) may help to distinguish true double sensitization from crossreactivity. Included were 121 patients with systemic allergic reactions to Hymenoptera stings, 76 with double positivity of serum-specific IgE (sIgE) to both venoms, 45 with single positivity to bee or wasp venom, and 32 controls without history of systemic reactions to Hymenoptera stings and no sIgE to whole venoms. In venom-allergic patients and controls, sIgE to rSSMA Api m 1 of bee venom and to Ves v 1 and Ves v 5 of wasp venom were tested by ImmunoCAP. Only 47% of 76 patients with double positivity to whole venoms reacted also to rSSMA of both species. Specificity of sIgE to the 3 rSSMA was very high, with no sIgE to rSSMA of the other species in single-positive venom-allergic patients and only one control with low sIgE to Ves v 1. All wasp-allergic single-positive patients had sIgE to Ves v 5 and/or Ves v 1, and 78.3% of single-positive bee venom-allergic patients had sIgE to Api m 1. Specificity of sIgE to rSSMA of both species is excellent. Sensitivity of sIgE to rSSMA was optimal for wasp venom. Sensitivity of bee venom Api m 1 could be increased by adding rSSMA of other important bee venom allergens. © 2012 John Wiley & Sons A/S.

  14. Parents' Perception of Satisfaction With Pediatric Nurse Practitioners' Care And Parental Intent to Adhere To Recommended Health Care Regimen.

    Science.gov (United States)

    Kinder, Frances DiAnna

    2016-01-01

    The purposes of this study were to explore parents' perceptions of satisfaction with care from primary care pediatric nurse practitioners (PNPs) and to explore the relationships of the four components of parental satisfaction with parents' intent to adhere to recommended health care regimen. The study used a descriptive correlational research design. A convenience sample of 91 participants was recruited from practices in southeastern Pennsylvania. The 28-item, Parents' Perceptions of Satisfaction with Care from Pediatric Nurse Practitioners (PPSC-PNP) tool was developed to measure four components of satisfaction and overall satisfaction of parents with PNP care after the health visit. A 100 mm visual analog (VAS) scale measured parental intent to adhere to the care regimen recommended by the PNP. Parents' perceptions of overall satisfaction with care from PNPs and satisfaction with each of the four components (communication, clinical competence, caring behavior, and decisional control) were high as measured by the PPSC-PNP. Multiple regression analysis revealed that clinical competence had the strongest positive relationship with parental intent to adhere to PNP recommended health regimen and was the only variable to enter the regression equation. The findings of this study have implications for nursing practice. The PPSC-PNP instrument may be used with a variety of pediatric populations and settings as a benchmark for quality care. Clinical competence is important for the role of the PNP. Other variables of parental intent to adhere to the health regimen should be explored in future studies.

  15. Photooxidative Removal of p -Nitrophenol by UV/H 2 O 2 Process in a Spinning Disk Photoreactor: Influence of Operating Parameters

    Directory of Open Access Journals (Sweden)

    H. Dadkhah

    2017-10-01

    Full Text Available In this paper, spinning disk photoreactor (SDP has been used for the removal of a refractory pollutant, namely p-nitrophenol (PNP, in UV/H2O2 process. The effect of various parameters such as the plate type in the SDP, concentration of oxidant (H2O2, fluid volume, initial concentration of PNP, distance of the lamps from the spinning disk, distance of the lamps from each other, pH, and rotation speed of the spinning disk in the removal efficiency has been investigated. The results indicated that the use of scrobiculate disc instead of flat disc significantly increased the removal percentage of PNP from 46 to 100 % for the irradiation time of 20 min; it also increased with increasing H2O2 concentration, but the increase in fluid volume and the initial concentration of PNP reduced the removal percentage of PNP in the SDP. The increase in the distance of UV lamps from each other and from disc surface in the SDP reduced the removal percentage of PNP. However, the increase in pH to 5.5 increased removal efficiency while increasing pH above 5.5 reduced PNP removal efficiency. The disk rotation speed from 0 to 90 rpm increased the removal percentage from 49 to 70 % for the irradiation time of 5 min, but increasing the rotation speed to more than 90 rpm reduced the removal efficiency.

  16. Interaction Of Calcium Phosphate Nanoparticles With Human Chorionic Gonadotropin Modifies Secondary And Tertiary Protein Structure

    Directory of Open Access Journals (Sweden)

    Al-Hakeim Hussein K

    2015-12-01

    Full Text Available Calcium phosphate nanoparticles (CaPNP have good biocompatibility and bioactivity inside human body. In this study, the interaction between CaPNP and human chorionic gonadotropin (hCG was analyzed to determine the changes in the protein structure in the presence of CaPNP and the quantity of protein adsorbed on the CaPNP surface. The results showed a significant adsorption of hCG on the CaPNP nanoparticle surface. The optimal fit was achieved using the Sips isotherm equation with a maximum adsorption capacity of 68.23 µg/mg. The thermodynamic parameters, including ∆H° and ∆G°, of the adsorption process are positive, whereas ∆S° is negative. The circular dichroism results of the adsorption of hCG on CaPNP showed the changes in its secondary structure; such changes include the decomposition of α-helix strand and the increase in β-pleated sheet and random coil percentages. Fluorescence study indicated minimal changes in the tertiary structure near the microenvironment of the aromatic amino acids such as tyrosine and phenyl alanine caused by the interaction forces between the CaPNP and hCG protein. The desorption process showed that the quantity of the hCG desorbed significantly increases as temperature increases, which indicates the weak forces between hCG and the surface.

  17. Flicker noise comparison of direct conversion mixers using Schottky and HBT dioderings in SiGe:C BiCMOS technology

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld

    2015-01-01

    In this paper, we present flicker noise measurements of two X-band direct conversion mixers implemented in a SiGe:C BiCMOS technology. Both mixers use a ring structure with either Schottky diodes or diode-connected HBTs for double balanced operation. The mixers are packaged in a metal casing on a...... circuit demonstrates a 1/f noise corner frequency around 10 kHz....

  18. Plant natriuretic peptides induce proteins diagnostic for an adaptive response to stress

    KAUST Repository

    Turek, Ilona; Marondedze, Claudius; Wheeler, Janet I.; Gehring, Christoph A; Irving, Helen R.

    2014-01-01

    In plants, structural and physiological evidence has suggested the presence of biologically active natriuretic peptides (PNPs). PNPs are secreted into the apoplast, are systemically mobile and elicit a range of responses signaling via cGMP. The PNP-dependent responses include tissue specific modifications of cation transport and changes in stomatal conductance and the photosynthetic rate. PNP also has a critical role in host defense responses. Surprisingly, PNP-homologs are produced by several plant pathogens during host colonization suppressing host defense responses. Here we show that a synthetic peptide representing the biologically active fragment of the Arabidopsis thaliana PNP (AtPNP-A) induces the production of reactive oxygen species in suspension-cultured A. thaliana (Col-0) cells. To identify proteins whose expression changes in an AtPNP-A dependent manner, we undertook a quantitative proteomic approach, employing tandem mass tag (TMT) labeling, to reveal temporal responses of suspension-cultured cells to 1 nM and 10 pM PNP at two different time-points post-treatment. Both concentrations yield a distinct differential proteome signature. Since only the higher (1 nM) concentration induces a ROS response, we conclude that the proteome response at the lower concentration reflects a ROS independent response. Furthermore, treatment with 1 nM PNP results in an over-representation of the gene ontology (GO) terms “oxidation-reduction process,” “translation” and “response to salt stress” and this is consistent with a role of AtPNP-A in the adaptation to environmental stress conditions.

  19. The Regulation of para-Nitrophenol Degradation in Pseudomonas putida DLL-E4.

    Directory of Open Access Journals (Sweden)

    Qiongzhen Chen

    Full Text Available Pseudomonas putida DLL-E4 can efficiently degrade para-nitrophenol and its intermediate metabolite hydroquinone. The regulation of para-nitrophenol degradation was studied, and PNP induced a global change in the transcriptome of P. putida DLL-E4. When grown on PNP, the wild-type strain exhibited significant downregulation of 2912 genes and upregulation of 845 genes, whereas 2927 genes were downregulated and 891 genes upregulated in a pnpR-deleted strain. Genes related to two non-coding RNAs (ins1 and ins2, para-nitrophenol metabolism, the tricarboxylic acid cycle, the outer membrane porin OprB, glucose dehydrogenase Gcd, and carbon catabolite repression were significantly upregulated when cells were grown on para-nitrophenol plus glucose. pnpA, pnpR, pnpC1C2DECX1X2, and pnpR1 are key genes in para-nitrophenol degradation, whereas pnpAb and pnpC1bC2bDbEbCbX1bX2b have lost the ability to degrade para-nitrophenol. Multiple components including transcriptional regulators and other unknown factors regulate para-nitrophenol degradation, and the transcriptional regulation of para-nitrophenol degradation is complex. Glucose utilization was enhanced at early stages of para-nitrophenol supplementation. However, it was inhibited after the total consumption of para-nitrophenol. The addition of glucose led to a significant enhancement in para-nitrophenol degradation and up-regulation in the expression of genes involved in para-nitrophenol degradation and carbon catabolite repression (CCR. It seemed that para-nitrophenol degradation can be regulated by CCR, and relief of CCR might contribute to enhanced para-nitrophenol degradation. In brief, the regulation of para-nitrophenol degradation seems to be controlled by multiple factors and requires further study.

  20. Plant natriuretic peptides induce proteins diagnostic for an adaptive response to stress

    KAUST Repository

    Turek, Ilona

    2014-11-26

    In plants, structural and physiological evidence has suggested the presence of biologically active natriuretic peptides (PNPs). PNPs are secreted into the apoplast, are systemically mobile and elicit a range of responses signaling via cGMP. The PNP-dependent responses include tissue specific modifications of cation transport and changes in stomatal conductance and the photosynthetic rate. PNP also has a critical role in host defense responses. Surprisingly, PNP-homologs are produced by several plant pathogens during host colonization suppressing host defense responses. Here we show that a synthetic peptide representing the biologically active fragment of the Arabidopsis thaliana PNP (AtPNP-A) induces the production of reactive oxygen species in suspension-cultured A. thaliana (Col-0) cells. To identify proteins whose expression changes in an AtPNP-A dependent manner, we undertook a quantitative proteomic approach, employing tandem mass tag (TMT) labeling, to reveal temporal responses of suspension-cultured cells to 1 nM and 10 pM PNP at two different time-points post-treatment. Both concentrations yield a distinct differential proteome signature. Since only the higher (1 nM) concentration induces a ROS response, we conclude that the proteome response at the lower concentration reflects a ROS independent response. Furthermore, treatment with 1 nM PNP results in an over-representation of the gene ontology (GO) terms “oxidation-reduction process,” “translation” and “response to salt stress” and this is consistent with a role of AtPNP-A in the adaptation to environmental stress conditions.

  1. The Role of Cumulative Trauma, Betrayal, and Appraisals in Understanding Trauma Symptomatology.

    Science.gov (United States)

    Martin, Christina Gamache; Cromer, Lisa Demarni; Deprince, Anne P; Freyd, Jennifer J

    2013-03-01

    Poor psychological outcomes are common among trauma survivors, yet not all survivors experience adverse sequelae. The current study examined links between cumulative trauma exposure as a function of the level of betrayal (measured by the relational closeness of the survivor and the perpetrator), trauma appraisals, gender, and trauma symptoms. Participants were 273 college students who reported experiencing at least one traumatic event on a trauma checklist. Three cumulative indices were constructed to assess the number of different types of traumas experienced that were low (LBTs), moderate (MBTs), or high in betrayal (HBTs). Greater trauma exposure was related to more symptoms of depression, dissociation, and PTSD, with exposure to HBTs contributing the most. Women were more likely to experience HBTs than men, but there were no gender differences in trauma-related symptoms. Appraisals of trauma were predictive of trauma-related symptoms over and above the effects explained by cumulative trauma at each level of betrayal. The survivor's relationship with the perpetrator, the effect of cumulative trauma, and their combined impact on trauma symptomatology are discussed.

  2. Spectral, thermal, electrochemical and analytical studies on Cd(II) and Hg(II) thiosemicarbazone complexes

    Science.gov (United States)

    El-Asmy, A. A.; El-Gammal, O. A.; Saleh, H. S.

    2008-11-01

    The coordination characteristic of the investigated thiosemicarbazones towards hazard pollutants, Cd(II) and Hg(II), becomes the first goal. Their complexes have been studied by microanalysis, thermal, electrochemical and spectral (electronic, IR and MS) studies. The substitutent (salicylaldehyde, acetophenone, benzophenone, o-hydroxy- p-methoxybenzophenone or diacetylmonoxime) plays an important role in the complex formation. The coordination sites were the S for thiosemicarbazide (HTS); NN for benzophenone thiosemicarbazone (HBTS); NS for acetophenone thiosemicarbazone (HATS) and salicylaldehyde thiosemicarbazone (H 2STS); NNS or NSO for diacetylmonoxime thiosemicarbazone (H 2DMTS). The stability constants of Hg(II) complexes were higher than Cd(II). The kinetic and thermodynamic parameters for the different thermal decomposition steps in the complexes have been evaluated. The activation energy values of the first step ordered the complexes as: [Cd(H 2STS)Cl 2]H 2O > [Cd(H 2DAMTS)Cl 2] > [Cd(HBTS) 2Cl 2]2H 2O > [Cd(HATS) 2Cl 2]. The CV of [Cd(H 2STS)Cl 2]H 2O and [Hg(HBTS)Cl 2] were recorded. The use of H 2DMTS as a new reagent for the separation and determination of Cd(II) ions from water and some synthetic samples using flotation technique is aimed to be discussed.

  3. Anti-mycobacterium tuberculosis activity of polyherbal medicines used for the treatment of tuberculosis in Eastern Cape, South Africa.

    Science.gov (United States)

    Famewo, Elizabeth B; Clarke, Anna M; Wiid, Ian; Ngwane, Andile; van Helden, Paul; Afolayan, Anthony J

    2017-09-01

    The emergence of drug-resistant strains of Mycobacterium tuberculosis has become a global public health problem. Polyherbal medicines offer great hope for developing alternative drugs for the treatment of tuberculosis. To evaluate the anti-tubercular activity of polyherbal medicines used for the treatment of tuberculosis. The remedies were screened against Mycobacterium tuberculosis H37Rv using Middlebrook 7H9 media and MGIT BACTEC 960 system. They were liquid preparations from King Williams Town site A (KWTa), King Williams Town site B (KWTb), King Williams Town site C (KWTc), Hogsback first site (HBfs), Hogsback second site (HBss), Hogsback third site (HBts), East London (EL), Alice (AL) and Fort Beaufort (FB). The susceptibility testing revealed that all the remedies contain anti-tubercular activity with KWTa, KWTb, KWTc, HBfs, HBts, AL and FB exhibiting more activity at a concentration below 25 µl/ml. Furthermore, MIC values exhibited inhibitory activity with the most active remedies from KWTa, HBfs and HBts at 1.562 µg/ml. However, isoniazid showed more inhibitory activity against M. tuberculosis at 0.05 µg/ml when compare to the polyherbal remedies. This study has indicated that these remedies could be potential sources of new anti-mycobacterial agents against M. tuberculosis . However, the activity of these preparations and their active principles still require in vivo study in order to assess their future as new anti-tuberculosis agents.

  4. Application of the Poisson-Nernst-Planck equations to the migration test

    DEFF Research Database (Denmark)

    Krabbenhøft, Kristian; Krabbenhøft, Jørgen

    2008-01-01

    The Poisson-Nernst-Planck (PNP) equations are applied to model the migration test. A detailed analysis of the equations is presented and the effects of a number of common, simplifying assumptions are quantified. In addition, closed-form solutions for the effective chloride diffusivity based...... on the full PNP equations are derived, a number of experiments are analyzed in detail, and a new, truly accelerated migration test is proposed. Finally, we present a finite element procedure for numerical solution of the PNP equations....

  5. Escherichia coli Purine Nucleoside Phosphorylase II, the Product of the xapA Gene

    DEFF Research Database (Denmark)

    Dandanell, Gert; Szczepanowski, R.H.; Kierdaszuk, B.

    2005-01-01

    the monoanionic form of xanthine. A single amino acid exchange, tyrosine 191 to leucine, is sufficient to convert E. coli PNP-II into an enzyme with the specificity of conventional trimeric PNPs, but the reciprocal mutation in human PNP, valine 195 to tyrosine, does not elicit xanthosine phosphorylase activity...... forms, PNP-II trimers dimerize, leading to a subunit arrangement that is qualitatively different from the "trimer of dimers" arrangement of conventional high molecular mass PNPs. Crystal structures are compatible with similar binding modes for guanine and xanthine, with a preference for the neutral over...

  6. ORF Alignment: NC_000962 [GENIUS II[Archive

    Lifescience Database Archive (English)

    Full Text Available ulosis CDC1551] pdb|1N3I|C Chain C, ... Crystal Structure Of Mycobacterium Tuberculosis...Structure Of Mycobacterium Tuberculosis Pnp With ... Transition State Analog Dadme-Immh pdb|1N3I|A Ch...ain A, ... Crystal Structure Of Mycobacterium Tuberculosis Pnp With ... Transition State Analo...g Dadme-Immh pdb|1I80|C Chain C, ... Crystal Structure Of M. Tuberculosis ...in B, Crystal Structure Of M. Tuberculosis ... Pnp In Complex With Iminoribitol, 9-Deazahypoxanthine

  7. ORF Alignment: NC_002755 [GENIUS II[Archive

    Lifescience Database Archive (English)

    Full Text Available ulosis CDC1551] pdb|1N3I|C Chain C, ... Crystal Structure Of Mycobacterium Tuberculosis...Structure Of Mycobacterium Tuberculosis Pnp With ... Transition State Analog Dadme-Immh pdb|1N3I|A Ch...ain A, ... Crystal Structure Of Mycobacterium Tuberculosis Pnp With ... Transition State Analo...g Dadme-Immh pdb|1I80|C Chain C, ... Crystal Structure Of M. Tuberculosis ...in B, Crystal Structure Of M. Tuberculosis ... Pnp In Complex With Iminoribitol, 9-Deazahypoxanthine

  8. ORF Alignment: NC_002945 [GENIUS II[Archive

    Lifescience Database Archive (English)

    Full Text Available ulosis CDC1551] pdb|1N3I|C Chain C, ... Crystal Structure Of Mycobacterium Tuberculosis...Structure Of Mycobacterium Tuberculosis Pnp With ... Transition State Analog Dadme-Immh pdb|1N3I|A Ch...ain A, ... Crystal Structure Of Mycobacterium Tuberculosis Pnp With ... Transition State Analo...g Dadme-Immh pdb|1I80|C Chain C, ... Crystal Structure Of M. Tuberculosis ...in B, Crystal Structure Of M. Tuberculosis ... Pnp In Complex With Iminoribitol, 9-Deazahypoxanthine

  9. Synthesis, solid-state structure, and bonding analysis of a homoleptic beryllium azide

    International Nuclear Information System (INIS)

    Naglav, Dominik; Tobey, Briac; Lyhs, Benjamin; Roemer, Beate; Blaeser, Dieter; Woelper, Christoph; Jansen, Georg; Schulz, Stephan

    2017-01-01

    [Ph 4 P] 2 [Be(N 3 ) 4 ] (1) and [PNP] 2 [Be(N 3 ) 4 ] (2; PNP=Ph 3 PNPPh 3 ) were synthesized by reacting Be(N 3 ) 2 with [Ph 4 P]N 3 and [PNP]N 3 . Compound 1 represents the first structurally characterized homoleptic beryllium azide. The electronic structure and bonding situation in the tetraazidoberyllate dianion [Be(N 3 ) 4 ] 2- were investigated by quantum-chemical calculations (NPA, ELF, LOL). (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Paraneoplastic pemphigus associated with inflammatory myofibroblastic tumour of the mediastinum: A favourable response to treatment and review of the literature.

    Science.gov (United States)

    Ghandi, Narges; Ghanadan, Alireza; Azizian, Mohammad-Reza; Hejazi, Pardis; Aghazadeh, Nessa; Tavousi, Parvin; Daneshpazhooh, Maryam

    2015-05-01

    Paraneoplastic pemphigus (PNP) is an autoimmune blistering disorder that occurs in association with an underlying neoplasm. Inflammatory myofibroblastic tumour (IMT) is a rare low-grade sarcoma of fibroblasts and myofibroblasts associated with inflammatory cells, most commonly occurring in the lung. In this study, a case of PNP associated with IMT of the mediastinum is reported. The patient had a favourable outcome following surgical resection and treatment with a systemic steroid, azathioprine, and i.v. immunoglobulin. The occurrence of PNP with sarcomas, specifically IMT, is noteworthy although it is not well studied in the existing literature. © 2014 The Australasian College of Dermatologists.

  11. High temperature alloys for the primary circuit of a prototype nuclear process heat plant

    International Nuclear Information System (INIS)

    Ennis, P.J.; Schuster, H.

    1979-01-01

    As part of a comprehensive materials test programme for the High Temperature Reactor Project 'Prototype Plant for Nuclear Process Heat' (PNP), high temperature alloys are being investigated for primary circuit components operating at temperatures above 750 0 C. On the basis of important material parameters, in particular corrosion behaviour and mechanical properties in primary coolant helium, the potential of candidate alloys is discussed. By comparing specific PNP materials data with the requirements of PNP and those of conventional plant, the implications for the materials programme and component design are given. (orig.)

  12. Synthesis, Solid-State Structure, and Bonding Analysis of a Homoleptic Beryllium Azide.

    Science.gov (United States)

    Naglav, Dominik; Tobey, Briac; Lyhs, Benjamin; Römer, Beate; Bläser, Dieter; Wölper, Christoph; Jansen, Georg; Schulz, Stephan

    2017-07-10

    [Ph 4 P] 2 [Be(N 3 ) 4 ] (1) and [PNP] 2 [Be(N 3 ) 4 ] (2; PNP=Ph 3 PNPPh 3 ) were synthesized by reacting Be(N 3 ) 2 with [Ph 4 P]N 3 and [PNP]N 3 . Compound 1 represents the first structurally characterized homoleptic beryllium azide. The electronic structure and bonding situation in the tetraazidoberyllate dianion [Be(N 3 ) 4 ] 2- were investigated by quantum-chemical calculations (NPA, ELF, LOL). © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Positive Skin Test or Specific IgE to Penicillin Does Not Reliably Predict Penicillin Allergy

    DEFF Research Database (Denmark)

    Tannert, Line Kring; Mørtz, Charlotte G; Skov, Per Stahl

    2017-01-01

    INTRODUCTION: According to guidelines, patients are diagnosed with penicillin allergy if skin test (ST) result or specific IgE (s-IgE) to penicillin is positive. However, the true sensitivity and specificity of these tests are presently not known. OBJECTIVE: To investigate the clinical relevance...... of a positive ST result and positive s-IgE and to study the reproducibility of ST and s-IgE. METHODS: A sample of convenience of 25 patients with positive penicillin ST results, antipenicillin s-IgE results, or both was challenged with their culprit penicillin. Further 19 patients were not challenged......-IgE measured (T0), and then skin tested and had s-IgE measured 4 weeks later (T1). RESULTS: Only 9 (36%) of 25 were challenge positive. There was an increased probability of being penicillin allergic if both ST result and s-IgE were positive at T0. Positive ST result or positive s-IgE alone did not predict...

  14. Positive serum specific IgE has a short half-life in patients with penicillin allergy and reversal does not always indicate tolerance.

    Science.gov (United States)

    Hjortlund, Janni; Mortz, Charlotte Gotthard; Stage, Tore Bjerregaard; Skov, Per Stahl; Dahl, Ronald; Bindslev-Jensen, Carsten

    2014-01-01

    The positive and negative predictive values of specific IgE to penicillins are not well established for penicillin hypersensitivity. One reason may be that serum IgE levels to penicillin diminish over time. The objective in this study was to investigate variations in serum half-life (T½) for specific IgE to penicillins (s-IgE) and to evaluate the outcome of penicillin challenges in patients with previous but not present specific IgE to penicillins. Two subgroups were investigated. All included patients had a history of penicillin allergy with reported symptoms such as urticaria/angioedema or unclassified cutaneous rash. T½ of specific IgE to penicillins was calculated based on sera from 29 patients with repeated measurements of s-IgE. Twenty-two patients with a previous positive s-IgE was followed and challenged with penicillin when IgE had become negative. The T½ for s-IgE varied between the 26 patients with decreasing s-IgE from 1.6 months to 76.4 months and 52% had a T½ of less than a year. The three patients with stable and increasing IgE-values showed T½ approaching infinity A total of 29 challenges with β-lactams were performed. Four different patterns were seen when evaluating the clinical reaction to challenge (positive/negative) and post-challenge boost of s-IgE (yes/no). Eight (36.4%) had negative challenge and negative post-challenge s-IgE, eight (36.4%) negative challenge, but positive post-challenge s-IgE levels. 3 (13.6%) had positive challenge and positive post-challenge s-IgE whereas 3 (13.6%) were challenge positive, but had negative post-challenge s-IgE. Specific IgE to penicillins declines over time stressing the importance of a close time relation between diagnostic work-up and clinical reaction. Reversal of previously positive s-IgE may still be associated with positive penicillin challenges and/or re-boostering of s-IgE to positivity.

  15. Monitoring Arthrobacter protophormiae RKJ100 in a 'tag and chase' method during p-nitrophenol bio-remediation in soil microcosms.

    Science.gov (United States)

    Pandey, Gunjan; Pandey, Janmejay; Jain, Rakesh K

    2006-05-01

    Monitoring of micro-organisms released deliberately into the environment is essential to assess their movement during the bio-remediation process. During the last few years, DNA-based genetic methods have emerged as the preferred method for such monitoring; however, their use is restricted in cases where organisms used for bio-remediation are not well characterized or where the public domain databases do not provide sufficient information regarding their sequence. For monitoring of such micro-organisms, alternate approaches have to be undertaken. In this study, we have specifically monitored a p-nitrophenol (PNP)-degrading organism, Arthrobacter protophormiae RKJ100, using molecular methods during PNP degradation in soil microcosm. Cells were tagged with a transposon-based foreign DNA sequence prior to their introduction into PNP-contaminated microcosms. Later, this artificially introduced DNA sequence was PCR-amplified to distinguish the bio-augmented organism from the indigenous microflora during PNP bio-remediation.

  16. Effect of low temperature and electron irradiation on the volt-ampere characteristics of silicon structures with p-n junctions; Vliyanie nizkikh temperatur i ehlektronnogo oblucheniya na vol`t-ampernye kharakteristiki kremnievykh struktur s p-n perekhodami

    Energy Technology Data Exchange (ETDEWEB)

    Korshunov, F P [and others

    1994-12-31

    Features of volt-ampere characteristic behaviour of silicon, diffusion p-n-p structures making up the basis of force diodes under their operation in the mode of nominal and overload current densities are investigated.

  17. A designated centre for people with disabilities operated by Camphill Communities of Ireland, Tipperary

    LENUS (Irish Health Repository)

    Smart, Keith M

    2012-08-01

    As a mechanisms-based classification of pain \\'peripheral neuropathic pain\\' (PNP) refers to pain arising from a primary lesion or dysfunction in the peripheral nervous system. Symptoms and signs associated with an assumed dominance of PNP in patients attending for physiotherapy have not been extensively studied. The purpose of this study was to identify symptoms and signs associated with a clinical classification of PNP in patients with low back (± leg) pain. Using a cross-sectional, between-subjects design; four hundred and sixty-four patients with low back (± leg) pain were assessed using a standardised assessment protocol. Patients\\' pain was assigned a mechanisms-based classification based on experienced clinical judgement. Clinicians then completed a clinical criteria checklist specifying the presence or absence of various clinical criteria. A binary logistic regression analysis with Bayesian model averaging identified a cluster of two symptoms and one sign predictive of PNP, including: \\'Pain referred in a dermatomal or cutaneous distribution\\

  18. Mechanisms-based classifications of musculoskeletal pain: part 2 of 3: symptoms and signs of peripheral neuropathic pain in patients with low back (± leg) pain.

    LENUS (Irish Health Repository)

    Smart, Keith M

    2012-08-01

    As a mechanisms-based classification of pain \\'peripheral neuropathic pain\\' (PNP) refers to pain arising from a primary lesion or dysfunction in the peripheral nervous system. Symptoms and signs associated with an assumed dominance of PNP in patients attending for physiotherapy have not been extensively studied. The purpose of this study was to identify symptoms and signs associated with a clinical classification of PNP in patients with low back (± leg) pain. Using a cross-sectional, between-subjects design; four hundred and sixty-four patients with low back (± leg) pain were assessed using a standardised assessment protocol. Patients\\' pain was assigned a mechanisms-based classification based on experienced clinical judgement. Clinicians then completed a clinical criteria checklist specifying the presence or absence of various clinical criteria. A binary logistic regression analysis with Bayesian model averaging identified a cluster of two symptoms and one sign predictive of PNP, including: \\'Pain referred in a dermatomal or cutaneous distribution\\

  19. A KIND OF FLUORESCENCE PROBE TO STUDY THE KINETICS OF POLYMERIZATION PROCESS

    Institute of Scientific and Technical Information of China (English)

    YANG Guoqiang; WU Shikang

    1994-01-01

    Fluorescence properties of 1-phenyl-3-(4'-nitrophenyl) pyrazoline (PNP) were studied in bulk polymerization process of methylmethacrylate (MMA). The fluorescence intensity of PNP was enhanced and the emission maximum was blue shifted with the polymerization progress. In the period of auto-acceleration of the polymerization the enhancement of fluorescence intensity and blue shift of peak wavelength in spectra could be observed evidently. This means that the solvatochromic properties of PNP are influenced not only by the solvent polarity but also by the viscosity of the medium(especially by the phase transition). In solid state PNP emits from the charge transfer excited state without solvent relaxation. The transient emission spectra and the results from Bakhshiev model of solvent relaxation coincide with that from the polymerization experiment.

  20. CIMIT/TATRC Symposium on Developing a Plug-and-Play Open Networking Standard for the Operating Room of the Future

    National Research Council Canada - National Science Library

    Goldman, Julian M

    2005-01-01

    ... - have been precluded, and safety and economic benefits have not been realized. Funding was sought for a symposium to begin the process of defining technical and clinical requirements for a bus-independent Plug-and-Play (PnP...

  1. Analysis of emission reduction strategies for power boilers in the US pulp and paper industry

    Data.gov (United States)

    U.S. Environmental Protection Agency — This paper first presents the background information for UISIS-PNP model by discussing different types of boilers installed throughout the pulp and paper sector, the...

  2. Modular, Plug and Play, Distributed Avionics, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — The objective of this SBIR effort was to prove the viability of an Ethernet version of the MicroSat Systems, Inc. (MSI) modular, plug and play (PnP) spacecraft...

  3. The effect of cyclophosphamide and gamma irradiation on adenosine deaminase and purine nucleoside phosphorylase in mice

    International Nuclear Information System (INIS)

    Hosek, B.; Bohaecek, J.; Sikulova, J.

    1991-01-01

    Changes in ADA and PNP activities in the spleens and thymuses of mice were studied after a single administration of cyclophosphamide and after whole-body gamma irradiation, applied alone or three days after CY application, In the first days after the treatment the enzyme activities were significantly depressed with the exception of ADA in the spleen, where a high elevation in relation to controls was observed. During the regeneration period a pronounced rise of PNP activity in the spleen occurred mainly after a combined application of CY and irradiation. In the thymus the regeneration was manifested by a mild increase of both ADA and PNP activities towards control values. The findings suggest that the expressive changes of ADA and PNP activities, participating in the purine salvage pathway, may, after a cytotoxic treatment, influence the nucleotide pool and DNA synthesis in lymphoid organs

  4. Palladium(II) complexes supported by a bidentate bis(secondary)phosphine linked by pyridine

    KAUST Repository

    Winston, Matthew S.; Bercaw, John E.

    2014-01-01

    A series of complexes of the type (PNP-H2)PdX2 (X=Cl, Br, I) have been synthesized, where PNP-H2 is a bis(secondary)phosphine ligand linked by a pyridine, 2,6-(2'-(Ph(H)P)(C6H4))2(C5H3N). Due to chirality at phosphorus, the parent ligand exists as a

  5. A eukaryotic-acquired gene by a biotrophic phytopathogen allows prolonged survival on the host by counteracting the shut-down of plant photosynthesis

    KAUST Repository

    Garavaglia, Betiana S.

    2010-01-28

    Xanthomonas citri pv. citri, the bacteria responsible for citrus canker posses a biological active plant natriuretic peptide (PNP)-like protein, not present in any other bacteria. PNPs are a class of extracellular, systemically mobile peptides that elicit a number of plant responses important in homeostasis and growth. Previously, we showed that a Xanthomonas citri pv. citri mutant lacking the PNP-like protein XacPNP produced more necrotic lesions in citrus leaves than wild type infections and suggested a role for XacPNP in the regulation of host homeostasis. Here we have analyzed the proteome modifications observed in citrus leaves infected with the wild type and XacPNP deletion mutant bacteria. While both of them cause downregulation of enzymes related to photosynthesis as well as chloroplastic ribosomal proteins, proteins related to defense responses are up-regulated. However, leaves infiltrated with the XacPNP deletion mutant show a more pronounced decrease in photosynthetic proteins while no reduction in defense related proteins as compared to the wild-type pathogen. This suggests that XacPNP serves the pathogen to maintain host photosynthetic efficiency during pathogenesis. The results from the proteomics analyses are consistent with our chlorophyll fluorescence data and transcript analyses of defense genes that show a more marked reduction in photosynthesis in the mutant but no difference in the induction of genes diagnostic for biotic-stress responses. We therefore conclude that XacPNP counteracts the shut-down of host photosynthesis during infection and in that way maintains the tissue in better conditions, suggesting that the pathogen has adapted a host gene to modify its natural host and render it a better reservoir for prolonged bacterial survival and thus for further colonization. 2010 Garavaglia et al.

  6. A eukaryotic-acquired gene by a biotrophic phytopathogen allows prolonged survival on the host by counteracting the shut-down of plant photosynthesis.

    Science.gov (United States)

    Garavaglia, Betiana S; Thomas, Ludivine; Gottig, Natalia; Dunger, Germán; Garofalo, Cecilia G; Daurelio, Lucas D; Ndimba, Bongani; Orellano, Elena G; Gehring, Chris; Ottado, Jorgelina

    2010-01-28

    Xanthomonas citri pv. citri, the bacteria responsible for citrus canker posses a biological active plant natriuretic peptide (PNP)-like protein, not present in any other bacteria. PNPs are a class of extracellular, systemically mobile peptides that elicit a number of plant responses important in homeostasis and growth. Previously, we showed that a Xanthomonas citri pv. citri mutant lacking the PNP-like protein XacPNP produced more necrotic lesions in citrus leaves than wild type infections and suggested a role for XacPNP in the regulation of host homeostasis. Here we have analyzed the proteome modifications observed in citrus leaves infected with the wild type and XacPNP deletion mutant bacteria. While both of them cause down-regulation of enzymes related to photosynthesis as well as chloroplastic ribosomal proteins, proteins related to defense responses are up-regulated. However, leaves infiltrated with the XacPNP deletion mutant show a more pronounced decrease in photosynthetic proteins while no reduction in defense related proteins as compared to the wild-type pathogen. This suggests that XacPNP serves the pathogen to maintain host photosynthetic efficiency during pathogenesis. The results from the proteomics analyses are consistent with our chlorophyll fluorescence data and transcript analyses of defense genes that show a more marked reduction in photosynthesis in the mutant but no difference in the induction of genes diagnostic for biotic-stress responses. We therefore conclude that XacPNP counteracts the shut-down of host photosynthesis during infection and in that way maintains the tissue in better conditions, suggesting that the pathogen has adapted a host gene to modify its natural host and render it a better reservoir for prolonged bacterial survival and thus for further colonization.

  7. A eukaryotic-acquired gene by a biotrophic phytopathogen allows prolonged survival on the host by counteracting the shut-down of plant photosynthesis.

    Directory of Open Access Journals (Sweden)

    Betiana S Garavaglia

    Full Text Available Xanthomonas citri pv. citri, the bacteria responsible for citrus canker posses a biological active plant natriuretic peptide (PNP-like protein, not present in any other bacteria. PNPs are a class of extracellular, systemically mobile peptides that elicit a number of plant responses important in homeostasis and growth. Previously, we showed that a Xanthomonas citri pv. citri mutant lacking the PNP-like protein XacPNP produced more necrotic lesions in citrus leaves than wild type infections and suggested a role for XacPNP in the regulation of host homeostasis. Here we have analyzed the proteome modifications observed in citrus leaves infected with the wild type and XacPNP deletion mutant bacteria. While both of them cause down-regulation of enzymes related to photosynthesis as well as chloroplastic ribosomal proteins, proteins related to defense responses are up-regulated. However, leaves infiltrated with the XacPNP deletion mutant show a more pronounced decrease in photosynthetic proteins while no reduction in defense related proteins as compared to the wild-type pathogen. This suggests that XacPNP serves the pathogen to maintain host photosynthetic efficiency during pathogenesis. The results from the proteomics analyses are consistent with our chlorophyll fluorescence data and transcript analyses of defense genes that show a more marked reduction in photosynthesis in the mutant but no difference in the induction of genes diagnostic for biotic-stress responses. We therefore conclude that XacPNP counteracts the shut-down of host photosynthesis during infection and in that way maintains the tissue in better conditions, suggesting that the pathogen has adapted a host gene to modify its natural host and render it a better reservoir for prolonged bacterial survival and thus for further colonization.

  8. The protected areas system in Brazil as a baseline condition for wetlands management and fish conservancy: the example of the Pantanal National Park

    OpenAIRE

    Carla N. M. Polaz; Fabio C. Ferreira; Miguel Petrere Júnior

    2017-01-01

    ABSTRACT Considering the need for the Brazilian government to develop tools for environmental monitoring for biodiversity conservancy purposes in the national protected areas system, this paper focuses on determining reference site metrics (or baselines) for adapting the Index of Biotic Integrity (IBI) based on the fish assemblages in the Pantanal National Park (PNP). The habitats in the PNP were grouped into four categories: main rivers, corixos (channels connecting the floodplain), permanen...

  9. Methodological interference of biochar in the determination of extracellular enzyme activities in composting samples

    Science.gov (United States)

    Jindo, K.; Matsumoto, K.; García Izquierdo, C.; Sonoki, T.; Sanchez-Monedero, M. A.

    2014-07-01

    Biochar application has received increasing attention as a means to trap recalcitrant carbon and enhance soil fertility. Hydrolytic enzymatic assays, such as β-glucosidase and phosphatase activities, are used for the assessment of soil quality and composting process, which are based on use of p-nitrophenol (PNP) derivatives as substrate. However, sorption capacity of biochar can interfere with colorimetric determination of the hydrolysed PNP, either by the sorption of the substrate or the reaction product of hydrolysis into biochar surface. The aim of the present work is to study the biochar sorption capacity for PNP in biochar-blended composting mixtures in order to assess its impact on the estimation of the colorimetric-based enzymatic assays. A retention test was conducted by adding a solution of known amounts of PNP in universal buffer solution (pH = 5, 6.5 and 11, corresponding to the β-glucosidase, acid and alkaline phosphatase activity assays, respectively), in samples taken at the initial stage and after maturation stage from four different composting piles (two manure composting piles; PM: poultry manure, CM: cow manure and two other similar piles containing 10% of additional biochar (PM + B, CM + B)). The results show that biochar-blended composts (PM + B, CM + B) generally exhibited low enzymatic activities, compared to manure compost without biochar (PM, CM). In terms of the difference between the initial and maturation stage of composting process, the PNP retention in biochar was shown higher at maturation stage, caused most probably by an enlarged proportion of biochar inside compost mixture after the selective degradation of easily decomposable organic matter. TThe retention of PNP on biochar was influenced by pH dependency of sorption capacity of biochar and/or PNP solubility, since PNP was more efficiently retained by biochar at low pH values (5 and 6.5) than at high pH values (11).

  10. A eukaryotic-acquired gene by a biotrophic phytopathogen allows prolonged survival on the host by counteracting the shut-down of plant photosynthesis

    KAUST Repository

    Garavaglia, Betiana S.; Thomas, Ludivine; Gottig, Natalia; Dunger, Germá n; Garofalo, Cecilia G.; Daurelio, Lucas D.; Ndimba, Bongani; Orellano, Elena G.; Gehring, Christoph A; Ottado, Jorgelina

    2010-01-01

    Xanthomonas citri pv. citri, the bacteria responsible for citrus canker posses a biological active plant natriuretic peptide (PNP)-like protein, not present in any other bacteria. PNPs are a class of extracellular, systemically mobile peptides that elicit a number of plant responses important in homeostasis and growth. Previously, we showed that a Xanthomonas citri pv. citri mutant lacking the PNP-like protein XacPNP produced more necrotic lesions in citrus leaves than wild type infections and suggested a role for XacPNP in the regulation of host homeostasis. Here we have analyzed the proteome modifications observed in citrus leaves infected with the wild type and XacPNP deletion mutant bacteria. While both of them cause downregulation of enzymes related to photosynthesis as well as chloroplastic ribosomal proteins, proteins related to defense responses are up-regulated. However, leaves infiltrated with the XacPNP deletion mutant show a more pronounced decrease in photosynthetic proteins while no reduction in defense related proteins as compared to the wild-type pathogen. This suggests that XacPNP serves the pathogen to maintain host photosynthetic efficiency during pathogenesis. The results from the proteomics analyses are consistent with our chlorophyll fluorescence data and transcript analyses of defense genes that show a more marked reduction in photosynthesis in the mutant but no difference in the induction of genes diagnostic for biotic-stress responses. We therefore conclude that XacPNP counteracts the shut-down of host photosynthesis during infection and in that way maintains the tissue in better conditions, suggesting that the pathogen has adapted a host gene to modify its natural host and render it a better reservoir for prolonged bacterial survival and thus for further colonization. 2010 Garavaglia et al.

  11. Highly selective detection of p-nitrophenol using fluorescence assay based on boron, nitrogen co-doped carbon dots.

    Science.gov (United States)

    Xiao, Na; Liu, Shi Gang; Mo, Shi; Li, Na; Ju, Yan Jun; Ling, Yu; Li, Nian Bing; Luo, Hong Qun

    2018-07-01

    p-Nitrophenol (p-NP) contaminants seriously endanger environmental and living beings health, hence to establish a sensitive and selective method is of great importance for the determination of p-NP. In this work, boron and nitrogen co-doped carbon dots (B,N-CDs) were synthesized by one-step hydrothermal method using 3-aminophenylboronic acid as the sole precursor. The product was characterized through high-resolution transmission electron microscopy, fluorescence spectroscopy, UV-visible absorption spectroscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy. Without any functionalized modification, B,N-CDs can be directly applied as a 'turn-off' fluorescent probe for rapid, highly selective, and sensitive detection of p-NP. The fluorescent sensor based on the B,N-CDs exhibited a broad linear response to the concentration of p-NP in the range of 0.5 - 60 μM and 60 - 200 μM, respectively, and provided a detection limit of 0.2 μM. It was found that only the absorption spectrum of p-NP has a wide overlap with the fluorescence excitation and emission spectra of B,N-CDs compared to those of other representative analogues. The response mechanism was due to the inner filter effect and the formation of dynamic covalent B-O bonds between B,N-CDs and p-NP, which endowed the sensing platform with the rapid response and high selectivity to p-NP. Finally, the sensor showed the practicability of p-NP determination in environmental water samples. Copyright © 2018 Elsevier B.V. All rights reserved.

  12. Comparative study of chemo-electro-mechanical transport models for an electrically stimulated hydrogel

    International Nuclear Information System (INIS)

    Elshaer, S E; Moussa, W A

    2014-01-01

    The main objective of this work is to introduce a new expression for the hydrogel’s hydration for use within the Poisson Nernst–Planck chemo electro mechanical (PNP CEM) transport models. This new contribution to the models support large deformation by considering the higher order terms in the Green–Lagrangian strain tensor. A detailed discussion of the CEM transport models using Poisson Nernst–Planck (PNP) and Poisson logarithmic Nernst–Planck (PLNP) equations for chemically and electrically stimulated hydrogels will be presented. The assumptions made to simplify both CEM transport models for electric field application in the order of 0.833 kV m −1 and a highly diluted electrolyte solution (97% is water) will be explained. This PNP CEM model has been verified accurately against experimental and numerical results. In addition, different definitions for normalizing the parameters are used to derive the dimensionless forms of both the PNP and PLNP CEM. Four models, PNP CEM, PLNP CEM, dimensionless PNP CEM and dimensionless PNLP CEM transport models were employed on an axially symmetric cylindrical hydrogel problem with an aspect ratio (diameter to thickness) of 175:3. The displacement and osmotic pressure obtained for the four models are compared against the variation of the number of elements for finite element analysis, simulation duration and solution rate when using the direct numerical solver. (papers)

  13. Ecological Conservation, Ecotourism, and Sustainable Management: The Case of Penang National Park

    Directory of Open Access Journals (Sweden)

    Sara Kaffashi

    2015-07-01

    Full Text Available Penang National Park (PNP, as Malaysia’s smallest national park, is one of the few naturally forested areas left on Penang Island, in Peninsular Malaysia. The main objective was to analyse users’ preferences and willingness to pay to enhance improved management of PNP for the dual aim of conservation and recreation. Structural equation modelling (SEM was used to analyse the formation of attitudes towards different aspects of PNP. Results showed that implementing enforcements with rules and regulations and imposing permits and charges on certain activities were the most influential variables of PNPs’ perceptions. The results of a random parameter logit model (RPL demonstrated that visitors placed the highest value on having adequate information about PNP, and the second-highest value on improvements in the park’s ecological management. The welfare measure for improvement in management of PNP against status quo is estimated at about MYR 9. Results also showed that demand for better conservation and management of PNP is relatively price-inelastic. Simulations of the results showed, under a MYR10 admission fee, that improvement in management would have 96% of market share compared with status quo. This study concluded that visitor entrance fees can and ought to be introduced as a means of financing conservation initiatives and possibly preventing congestion.

  14. IgE antibodies to alpha-gal in the general adult population

    DEFF Research Database (Denmark)

    Gonzalez-Quintela, A; Dam Laursen, A S; Vidal, C

    2014-01-01

    -gal-specific (s)IgE and its associated factors in the general adult population from two separated (Northern and Southern) European regions (Denmark and Spain, respectively). METHODS: Cross-sectional study of 2297 and 444 randomly selected adults from 11 municipalities in Denmark and one in Spain. Alpha-gal s.......1% in the Danish and Spanish series, respectively. The prevalence of sIgE ≥ 0.35 kUA /L was 1.8% and 2.2% in Denmark and Spain, respectively. Alpha-gal sIgE positivity was associated with pet ownership in both series and, particularly, cat ownership (data available in the Danish series). Alpha-gal sIgE positivity...

  15. Nanostructured Thermoelectric Oxides for Energy Harvesting Applications

    KAUST Repository

    Abutaha, Anas I.

    2015-01-01

    of thermoelectrics are still limited to one materials system, namely SiGe, since the traditional thermoelectric materials degrade and oxidize at high temperature. Therefore, oxide thermoelectrics emerge as a promising class of materials since they can operate

  16. Tightening grip

    Science.gov (United States)

    Strukov, Dmitri B.

    2018-01-01

    Engineering channels for ion transport in a SiGe solid-state electrolyte layer allows one to significantly decrease the spatial and temporal variations of the electrical characteristics in resistive switching memories.

  17. Silicon Germanium Quantum Well Solar Cell

    Data.gov (United States)

    National Aeronautics and Space Administration — A single crystal SiGe has enormous potentials for high performance chips and solar cells. This project seeks to fabricate a rudimentary but 1st cut quantum-well...

  18. Silicon-Germanium Front-End Electronics for Space-Based Radar Applications

    Data.gov (United States)

    National Aeronautics and Space Administration — Over the past two decades, Silicon-Germanium (SiGe) heterojunction bipolar transistor (HBT) technology has emerged as a strong platform for high-frequency...

  19. Deep Space Cryogenic Power Electronics, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Technology Application, Inc. (TAI) is proposing to demonstrate feasibility of implementing silicon germanium (SiGe) strained-gate technology in the power...

  20. SiGe-based re-engineering of electronic warfare subsystems

    CERN Document Server

    Lambrechts, Wynand

    2017-01-01

    This book equips readers with a thorough understanding of the applicability of new-generation silicon-germanium (SiGe) electronic subsystems for the military purposes of electronic warfare and defensive countermeasures. The theoretical and technical background is extensively explained and all aspects of the integration of SiGe as an enabling technology for maritime, land, and airborne (including space) electronic warfare are addressed, including research, design, development, and implementation. The coverage is supported by mathematical derivations, informative illustrations, practical examples, and case studies. While SiGe technology provides speed, performance, and price advantages in many markets, sharing of information on its use in electronic warfare systems has to date been limited, especially in developing nations. This book will therefore be warmly welcomed as an engineering guideline that focuses especially on the speed and reliability of current-generation SiGe circuits and highlights emerging innov...

  1. Inhibition and Structure of Trichomonas vaginalis Purine Nucleoside Phosphorylase with Picomolar Transition State Analogues

    Energy Technology Data Exchange (ETDEWEB)

    Rinaldo-Matthis,A.; Wing, C.; Ghanem, M.; Deng, H.; Wu, P.; Gupta, A.; Tyler, P.; Evans, G.; Furneaux, R.; et al.

    2007-01-01

    Trichomonas vaginalis is a parasitic protozoan purine auxotroph possessing a unique purine salvage pathway consisting of a bacterial type purine nucleoside phosphorylase (PNP) and a purine nucleoside kinase. Thus, T. vaginalis PNP (TvPNP) functions in the reverse direction relative to the PNPs in other organisms. Immucillin-A (ImmA) and DADMe-Immucillin-A (DADMe-ImmA) are transition stte mimics of adenosine with geometric and electrostatic features that resemble early and late transition states of adenosine at the transition state stabilized by TvPNP. ImmA demonstrates slow-onset tight-binding inhibition with TvPNP, to give an equilibrium dissociation constant of 87 pM, an inhibitor release half-time of 17.2 min, and a K{sub m}/K{sub d} ratio of 70,100. DADMe-ImmA resembles a late ribooxacarbenium ion transition state for TvPNP to give a dissociation constant of 30 pM, an inhibitor release half-time of 64 min, and a K{sub m}/K{sub d} ratio of 203,300. The tight binding of DADMe-ImmA supports a late S{sub N}1 transition state. Despite their tight binding to TvPNP, ImmA and DADMe-ImmA are weak inhibitors of human and P. falciparum PNPs. The crystal structures of the TvPNP-ImmA{center_dot}PO{sub 4} and TvPNP{center_dot}DADMe-ImmA{center_dot}PO{sub 4} ternary complexes differ from previous structures with substrate anologues. The tight binding with DADMe-ImmA is in part due to a 2.7 {angstrom} ionic interaction between a PO{sub 4} oxygen and the N1 cation of the hydroxypyrrolidine and is weaker in the TvPNP{center_dot}ImmA{center_dot}PO{sub 4} structure at 3.5 {angstrom}. However, the TvPNP{center_dot}ImmA{center_dot}PO{sub 4} structure includes hydrogen bonds between the 2'-hydroxyl and the protein that are not present in TvPNP{center_dot}DADMe-ImmA{center_dot}PO{sub 4}. These structures explain why DADMe-ImmA binds tighter than ImmA. Immucillin-H is a 12 nM inhibitor of TvPNP but a 56 pM inhibitor of human PNP. And this difference is explained by isotope

  2. New technologies of information treatment in the ERP of the Almaraz and Trillo nuclear power plants; Nuevas tecnologias de tratamiento de la informacion en el ERP de las centrales nucleares de Almaraz y Trillo

    Energy Technology Data Exchange (ETDEWEB)

    Martin Lopez-Suevos, C.; Gonzalez Crego, E.

    2013-03-01

    The Almaraz and Trillo Nuclear Power Plants are equipped with an Integrated Operation Management System (SIGE), which covers practically all of their transactional and management needs in all areas, with the exception of some specific engineering and simulation tools. In recent years, applications based on new computer technologies have been developed and integrated into the SIGE, including a Maintenance Dashboard, an Admissions Office ant the use of bar code readers, all of which are described in this article. (Author)

  3. Peanut sensitization pattern in Norwegian children and adults with specific IgE to peanut show age related differences.

    Science.gov (United States)

    Namork, Ellen; Stensby, Berit A

    2015-01-01

    Peanuts contain potent food allergens and the prevalence of allergy is reported to increase, especially in children. Since peanut sensitization may differ between different geographical regions, we wanted to investigate the sensitization pattern to the individual peanut allergens in a Norwegian population. Cases reported to the Norwegian Food Allergy Register with sera positive to peanut extract were analyzed for specific IgE (sIgE) to the recombinant peanut allergens Ara h 1, Ara h 2, Ara h 3, Ara h 8 and Ara h 9 and to birch pollen extract. Serum samples negative to the above allergens were analyzed for sIgE to Ara h 6, and sIgE to Pru p 3 in peach were analyzed in sera positive to the cross-reactive allergen Ara h 9. Highest frequency of sIgE to Ara h 2, often co-sensitized to Ara h 1 and 3, were found in the small children up to 6 years of age. From the age of 6 years, sensitization to Ara h 8 was predominant. The sIgE levels to the storage proteins Ara h 1, 2 and 3 were strongly correlated, as was the sIgE levels to Ara h 8 and birch pollen extract. A low sensitization rate of sIgE to Ara h 9 in young adults was observed, which sIgE levels were very strongly correlated to Pru p 3. The sensitization to peanut allergens in a Norwegian population shows a clear age dependent pattern. The results add to the previously published research on the sensitization patterns of peanut sensitized patients in different geographical areas.

  4. New technologies of information treatment in the ERP of the Almaraz and Trillo nuclear power plants

    International Nuclear Information System (INIS)

    Martin Lopez-Suevos, C.; Gonzalez Crego, E.

    2013-01-01

    The Almaraz and Trillo Nuclear Power Plants are equipped with an Integrated Operation Management System (SIGE), which covers practically all of their transactional and management needs in all areas, with the exception of some specific engineering and simulation tools. In recent years, applications based on new computer technologies have been developed and integrated into the SIGE, including a Maintenance Dashboard, an Admissions Office ant the use of bar code readers, all of which are described in this article. (Author)

  5. The diagnostic value of specific IgE to Ara h 2 to predict peanut allergy in children is comparable to a validated and updated diagnostic prediction model.

    Science.gov (United States)

    Klemans, Rob J B; Otte, Dianne; Knol, Mirjam; Knol, Edward F; Meijer, Yolanda; Gmelig-Meyling, Frits H J; Bruijnzeel-Koomen, Carla A F M; Knulst, André C; Pasmans, Suzanne G M A

    2013-01-01

    A diagnostic prediction model for peanut allergy in children was recently published, using 6 predictors: sex, age, history, skin prick test, peanut specific immunoglobulin E (sIgE), and total IgE minus peanut sIgE. To validate this model and update it by adding allergic rhinitis, atopic dermatitis, and sIgE to peanut components Ara h 1, 2, 3, and 8 as candidate predictors. To develop a new model based only on sIgE to peanut components. Validation was performed by testing discrimination (diagnostic value) with an area under the receiver operating characteristic curve and calibration (agreement between predicted and observed frequencies of peanut allergy) with the Hosmer-Lemeshow test and a calibration plot. The performance of the (updated) models was similarly analyzed. Validation of the model in 100 patients showed good discrimination (88%) but poor calibration (P original model: sex, skin prick test, peanut sIgE, and total IgE minus sIgE. When building a model with sIgE to peanut components, Ara h 2 was the only predictor, with a discriminative ability of 90%. Cutoff values with 100% positive and negative predictive values could be calculated for both the updated model and sIgE to Ara h 2. In this way, the outcome of the food challenge could be predicted with 100% accuracy in 59% (updated model) and 50% (Ara h 2) of the patients. Discrimination of the validated model was good; however, calibration was poor. The discriminative ability of Ara h 2 was almost comparable to that of the updated model, containing 4 predictors. With both models, the need for peanut challenges could be reduced by at least 50%. Copyright © 2012 American Academy of Allergy, Asthma & Immunology. Published by Mosby, Inc. All rights reserved.

  6. [Clinical investigation of basophil activation test as a complementary test for house dust mite allergen].

    Science.gov (United States)

    Ren, H L; Li, J D; Miao, Y H; Xu, T

    2018-03-01

    Objective: To investigate the clinical application of glass micro fiber basophil activation test (BAT) used as a complementary test for house dust mite allergen. Method: Forty patients with clinical diagnosed allergic rhinitis was test by three methods for house dust mite allergen, skin prick test(SPT),Immuno CAP sIgE, and BAT in vitro. The sensitivity and specificity of glass micro fiber were accessed, and the consistency between BAT, SPT, and Immuno sIgE was analyzed. As in vivo provocation was not performed, gold standard is regarded as the combination of medical history and positive reports of SPT and/or ImmunoCAP sIgE test. Result: Twentythree patients are diagnosed as house dust mite allergic rhinitis by gold standard. The sensitivity and specificity of glass micro fiber BAT were 60.9% and 88.2%, the sensitivity of SPT and sIgE was 87.0% and sIgE 73.9%. The correlation rates between BAT with SPT is 0.67( P house dust mite allergic rhinitis, BAT have a good consistency with SPT and sIgE, while as it has only moderate consistency with "gold standard", further studies are needed to prove its clinical significance. Copyright© by the Editorial Department of Journal of Clinical Otorhinolaryngology Head and Neck Surgery.

  7. Incorporating Born solvation energy into the three-dimensional Poisson-Nernst-Planck model to study ion selectivity in KcsA K+ channels

    Science.gov (United States)

    Liu, Xuejiao; Lu, Benzhuo

    2017-12-01

    Potassium channels are much more permeable to potassium than sodium ions, although potassium ions are larger and both carry the same positive charge. This puzzle cannot be solved based on the traditional Poisson-Nernst-Planck (PNP) theory of electrodiffusion because the PNP model treats all ions as point charges, does not incorporate ion size information, and therefore cannot discriminate potassium from sodium ions. The PNP model can qualitatively capture some macroscopic properties of certain channel systems such as current-voltage characteristics, conductance rectification, and inverse membrane potential. However, the traditional PNP model is a continuum mean-field model and has no or underestimates the discrete ion effects, in particular the ion solvation or self-energy (which can be described by Born model). It is known that the dehydration effect (closely related to ion size) is crucial to selective permeation in potassium channels. Therefore, we incorporated Born solvation energy into the PNP model to account for ion hydration and dehydration effects when passing through inhomogeneous dielectric channel environments. A variational approach was adopted to derive a Born-energy-modified PNP (BPNP) model. The model was applied to study a cylindrical nanopore and a realistic KcsA channel, and three-dimensional finite element simulations were performed. The BPNP model can distinguish different ion species by ion radius and predict selectivity for K+ over Na+ in KcsA channels. Furthermore, ion current rectification in the KcsA channel was observed by both the PNP and BPNP models. The I -V curve of the BPNP model for the KcsA channel indicated an inward rectifier effect for K+ (rectification ratio of ˜3 /2 ) but indicated an outward rectifier effect for Na+ (rectification ratio of ˜1 /6 ) .

  8. A plant natriuretic peptide-like molecule of the pathogen Xanthomonas axonopodis pv. citri causes rapid changes in the proteome of its citrus host

    KAUST Repository

    Garavaglia, Betiana S; Thomas, Ludivine; Zimaro, Tamara; Gottig, Natalia; Daurelio, Lucas D; Ndimba, Bongani; Orellano, Elena G; Ottado, Jorgelina; Gehring, Christoph A

    2010-01-01

    Background: Plant natriuretic peptides (PNPs) belong to a novel class of peptidic signaling molecules that share some structural similarity to the N-terminal domain of expansins and affect physiological processes such as water and ion homeostasis at nano-molar concentrations. The citrus pathogen Xanthomonas axonopodis pv. citri possesses a PNP-like peptide (XacPNP) uniquely present in this bacteria. Previously we observed that the expression of XacPNP is induced upon infection and that lesions produced in leaves infected with a XacPNP deletion mutant were more necrotic and lead to earlier bacterial cell death, suggesting that the plant-like bacterial PNP enables the plant pathogen to modify host responses in order to create conditions favorable to its own survival.Results: Here we measured chlorophyll fluorescence parameters and water potential of citrus leaves infiltrated with recombinant purified XacPNP and demonstrate that the peptide improves the physiological conditions of the tissue. Importantly, the proteomic analysis revealed that these responses are mirrored by rapid changes in the host proteome that include the up-regulation of Rubisco activase, ATP synthase CF1 ? subunit, maturase K, and ?- and ?-tubulin.Conclusions: We demonstrate that XacPNP induces changes in host photosynthesis at the level of protein expression and in photosynthetic efficiency in particular. Our findings suggest that the biotrophic pathogen can use the plant-like hormone to modulate the host cellular environment and in particular host metabolism and that such modulations weaken host defence. 2010 Garavaglia et al; licensee BioMed Central Ltd.

  9. A plant natriuretic peptide-like molecule of the pathogen Xanthomonas axonopodis pv. citri causes rapid changes in the proteome of its citrus host

    Directory of Open Access Journals (Sweden)

    Ottado Jorgelina

    2010-03-01

    Full Text Available Abstract Background Plant natriuretic peptides (PNPs belong to a novel class of peptidic signaling molecules that share some structural similarity to the N-terminal domain of expansins and affect physiological processes such as water and ion homeostasis at nano-molar concentrations. The citrus pathogen Xanthomonas axonopodis pv. citri possesses a PNP-like peptide (XacPNP uniquely present in this bacteria. Previously we observed that the expression of XacPNP is induced upon infection and that lesions produced in leaves infected with a XacPNP deletion mutant were more necrotic and lead to earlier bacterial cell death, suggesting that the plant-like bacterial PNP enables the plant pathogen to modify host responses in order to create conditions favorable to its own survival. Results Here we measured chlorophyll fluorescence parameters and water potential of citrus leaves infiltrated with recombinant purified XacPNP and demonstrate that the peptide improves the physiological conditions of the tissue. Importantly, the proteomic analysis revealed that these responses are mirrored by rapid changes in the host proteome that include the up-regulation of Rubisco activase, ATP synthase CF1 α subunit, maturase K, and α- and β-tubulin. Conclusions We demonstrate that XacPNP induces changes in host photosynthesis at the level of protein expression and in photosynthetic efficiency in particular. Our findings suggest that the biotrophic pathogen can use the plant-like hormone to modulate the host cellular environment and in particular host metabolism and that such modulations weaken host defence.

  10. A plant natriuretic peptide-like molecule of the pathogen Xanthomonas axonopodis pv. citri causes rapid changes in the proteome of its citrus host

    KAUST Repository

    Garavaglia, Betiana S

    2010-03-21

    Background: Plant natriuretic peptides (PNPs) belong to a novel class of peptidic signaling molecules that share some structural similarity to the N-terminal domain of expansins and affect physiological processes such as water and ion homeostasis at nano-molar concentrations. The citrus pathogen Xanthomonas axonopodis pv. citri possesses a PNP-like peptide (XacPNP) uniquely present in this bacteria. Previously we observed that the expression of XacPNP is induced upon infection and that lesions produced in leaves infected with a XacPNP deletion mutant were more necrotic and lead to earlier bacterial cell death, suggesting that the plant-like bacterial PNP enables the plant pathogen to modify host responses in order to create conditions favorable to its own survival.Results: Here we measured chlorophyll fluorescence parameters and water potential of citrus leaves infiltrated with recombinant purified XacPNP and demonstrate that the peptide improves the physiological conditions of the tissue. Importantly, the proteomic analysis revealed that these responses are mirrored by rapid changes in the host proteome that include the up-regulation of Rubisco activase, ATP synthase CF1 ? subunit, maturase K, and ?- and ?-tubulin.Conclusions: We demonstrate that XacPNP induces changes in host photosynthesis at the level of protein expression and in photosynthetic efficiency in particular. Our findings suggest that the biotrophic pathogen can use the plant-like hormone to modulate the host cellular environment and in particular host metabolism and that such modulations weaken host defence. 2010 Garavaglia et al; licensee BioMed Central Ltd.

  11. Improved sensitivity to venom specific-immunoglobulin E by spiking with the allergen component in Japanese patients suspected of Hymenoptera venom allergy.

    Science.gov (United States)

    Yoshida, Naruo; Hirata, Hirokuni; Watanabe, Mineaki; Sugiyama, Kumiya; Arima, Masafumi; Fukushima, Yasutsugu; Ishii, Yoshiki

    2015-07-01

    Ves v 5 and Pol d 5, which constitute antigen 5, are recognized as the major, most potent allergens of family Vespidae. Several studies have reported the diagnostic sensitivity of the novel recombinant (r)Ves v 5 and rPol d 5 allergens in routine clinical laboratory settings by analyzing a group of Vespula and Polistes venom-allergic patients. In this study, we analyzed the sensitivity to venom specific (s)IgE by spiking with rVes v 5 and rPol d 5 in Japanese patients suspected of Hymenoptera venom allergy. Subjects were 41 patients who had experienced systemic reactions to hornet and/or paper wasp stings. Levels of serum sIgE against hornet and paper wasp venom by spiking with rVes v 5 and rPold d 5, respectively, as improvement testing, compared with hornet and paper wasp venom, as conventional testing, were measured by ImmunoCAP. Of the 41 patients, 33 (80.5%) were positive (≥0.35 UA/ml) for hornet and/or paper wasp venom in conventional sIgE testing. sIgE levels correlated significantly (P venom (R = 0.78) in improvement testing and conventional testing. To determine specificity, 20 volunteers who had never experienced a Hymenoptera sting were all negative for sIgE against these venoms in both improvement and conventional testing. Improved sensitivity was seen in 8 patients negative for sIgE against both venoms in conventional testing, while improvement testing revealed sIgE against hornet or paper wasp venom in 5 (total 38 (92.7%)) patients. The measurement of sIgE following spiking of rVes v 5 and rPol d 5 by conventional testing in Japanese subjects with sIgE against hornet and paper wasp venom, respectively, improved the sensitivity for detecting Hymenoptera venom allergy. Improvement testing for measuring sIgE levels against hornet and paper wasp venom has potential for serologically elucidating Hymenoptera allergy in Japan. Copyright © 2015 Japanese Society of Allergology. Production and hosting by Elsevier B.V. All rights reserved.

  12. Specific IgE for Fag e 3 Predicts Oral Buckwheat Food Challenge Test Results and Anaphylaxis: A Pilot Study.

    Science.gov (United States)

    Yanagida, Noriyuki; Sato, Sakura; Maruyama, Nobuyuki; Takahashi, Kyohei; Nagakura, Ken-Ichi; Ogura, Kiyotake; Asaumi, Tomoyuki; Ebisawa, Motohiro

    2018-01-01

    Buckwheat (BW) is the source of a life-threatening allergen. Fag e 3-specific serum IgE (sIgE) is more useful than BW-sIgE for diagnosis; however, it is unknown whether Fag e 3-sIgE can predict oral food challenge (OFC) results and anaphylaxis. This study aimed to clarify the efficacy of Fag e 3-sIgE in predicting OFC results and anaphylaxis. We conducted a retrospective review of BW- and Fag e 3-sIgE data obtained using the ImmunoCAP® assay system and fluorescent enzyme-linked immunosorbent assay from children who underwent OFC using 3,072 mg of BW protein between July 2006 and March 2014 at Sagamihara National Hospital, Kanagawa, Japan. We analyzed 60 patients aged 1.9-13.4 years (median 6.0 years); 20 (33%) showed objective symptoms upon BW OFC. The patients without symptoms had significantly lower Fag e 3-sIgE than those with non-anaphylactic (p tested factor that significantly predicted positive OFC results (odds ratio 8.93, 95% confidence interval 3.10-25.73, p < 0.001) and OFC-induced anaphylaxis (2.67, 1.12-6.35, p = 0.027). We suggest that a threshold Fag e 3-sIgE level of 18.0 kUE/L has 95% probability of provoking a positive reaction to BW. Fag e 3-sIgE predicted OFC results and OFC-induced anaphylaxis. We further emphasize paying careful attention to the risk of BW OFC-induced anaphylaxis. © 2018 The Author(s) Published by S. Karger AG, Basel.

  13. Test simulation of neutron damage to electronic components using accelerator facilities

    Energy Technology Data Exchange (ETDEWEB)

    King, D.B., E-mail: dbking@sandia.gov; Fleming, R.M.; Bielejec, E.S.; McDonald, J.K.; Vizkelethy, G.

    2015-12-15

    The purpose of this work is to demonstrate equivalent bipolar transistor damage response to neutrons and silicon ions. We report on irradiation tests performed at the White Sands Missile Range Fast Burst Reactor, the Sandia National Laboratories (SNL) Annular Core Research Reactor, the SNL SPHINX accelerator, and the SNL Ion Beam Laboratory using commercial silicon npn bipolar junction transistors (BJTs) and III–V Npn heterojunction bipolar transistors (HBTs). Late time and early time gain metrics as well as defect spectra measurements are reported.

  14. Coherent tools for physics-based simulation and characterization of noise in semiconductor devices oriented to nonlinear microwave circuit CAD

    Science.gov (United States)

    Riah, Zoheir; Sommet, Raphael; Nallatamby, Jean C.; Prigent, Michel; Obregon, Juan

    2004-05-01

    We present in this paper a set of coherent tools for noise characterization and physics-based analysis of noise in semiconductor devices. This noise toolbox relies on a low frequency noise measurement setup with special high current capabilities thanks to an accurate and original calibration. It relies also on a simulation tool based on the drift diffusion equations and the linear perturbation theory, associated with the Green's function technique. This physics-based noise simulator has been implemented successfully in the Scilab environment and is specifically dedicated to HBTs. Some results are given and compared to those existing in the literature.

  15. A polymeric nanoparticle consisting of mPEG-PLA-Toco and PLMA-COONa as a drug carrier: improvements in cellular uptake and biodistribution.

    Science.gov (United States)

    Yi, Yilwoong; Kim, Jae Hong; Kang, Hye-Won; Oh, Hun Seung; Kim, Sung Wan; Seo, Min Hyo

    2005-02-01

    To evaluate a new polymeric nanoparticulate drug delivery formulation that consists of two components: i) an amphiphilic diblock copolymer having tocopherol moiety at the end of the hydrophobic block in which the hydrophobic tocopherol moiety increases stability of hydrophobic core of the nanoparticle in aqueous medium; and ii) a biodegradable copolyester having carboxylate end group that is capable of forming ionic complex with positively charged compounds such as doxorubicin. A doxourubicin-loaded polymeric nanoparticle (Dox-PNP) was prepared by solvent evaporation method. The entrapment efficiency, size distribution, and in vitro release profile at various pH conditions were characterized. In vitro cellular uptake was investigated by confocal microscopy, flow cytometry, and MTT assay using drug-sensitive and drug-resistant cell lines. Pharmacokinetics and biodistribution were evaluated in rats and tumor-bearing mice. Doxorubicin (Dox) was efficiently loaded into the PNP (higher than 95% of entrapment efficiency), and the diameter of Dox-PNP was in the range 20-25 nm with a narrow size distribution. In Vitro study showed that Dox-PNP exhibited higher cellular uptake into both human breast cancer cell (MCF-7) and human uterine cancer cell (MES-SA) than free doxorubicin solution (Free-Dox), especially into drug-resistant cells (MCF-7/ADR and MES-SA/Dx-5). In pharmacokinetics and tissue distribution study, the bioavailability of Dox-PNP calculated from the area under the blood concentration-time curve (AUC) was 69.8 times higher than that of Free-Dox in rats, and Dox-PNP exhibited 2 times higher bioavailability in tumor tissue of tumor-bearing mice. Dox-PNP exhibited enhanced cellular uptake of the drug. In the cytotoxic activity study, this improved cellular uptake was proved to be more advantageous in drug-resistant cell. Dox-PNP exhibited much higher bioavailability in blood plasma and more drug accumulation in tumor tissue than conventional doxorubicin

  16. Comparative study on the reactivity of Fe/Cu bimetallic particles and zero valent iron (ZVI) under different conditions of N2, air or without aeration.

    Science.gov (United States)

    Xiong, Zhaokun; Lai, Bo; Yang, Ping; Zhou, Yuexi; Wang, Juling; Fang, Shuping

    2015-10-30

    In order to further compare the degradation capacity of Fe(0) and Fe/Cu bimetallic system under different aeration conditions, the mineralization of PNP under different aeration conditions has been investigated thoroughly. The results show that the removal of PNP by Fe(0) or Fe/Cu system followed the pseudo-first-order reaction kinetics. Under the optimal conditions, the COD removal efficiencies obtained through Fe(0) or Fe/Cu system under different aeration conditions followed the trend that Fe/Cu (air)>Fe/Cu (N2: 0-30 min, air: 30-120 min)>control-Fe (air)>Fe/Cu (without aeration)>Fe/Cu (N2)>control-Fe (N2). It revealed that dissolved oxygen (DO) could improve the mineralization of PNP, and Cu could enhance the reactivity of Fe(0). In addition, the degradation of PNP was further analyzed by using UV-vis, FTIR and GC/MS, and the results suggest that Fe/Cu bimetallic system with air aeration could completely break the benzene ring and NO2 structure of PNP and could generate the nontoxic and biodegradable intermediate products. Meanwhile, most of these intermediate products were further mineralized into CO2 and H2O, which brought about a high COD removal efficiency (83.8%). Therefore, Fe/Cu bimetallic system with air aeration would be a promising process for toxic refractory industry wastewater. Copyright © 2015 Elsevier B.V. All rights reserved.

  17. pH-Switch Nanoprecipitation of Polymeric Nanoparticles for Multimodal Cancer Targeting and Intracellular Triggered Delivery of Doxorubicin.

    Science.gov (United States)

    Herranz-Blanco, Bárbara; Shahbazi, Mohammad-Ali; Correia, Alexandra R; Balasubramanian, Vimalkumar; Kohout, Tomáš; Hirvonen, Jouni; Santos, Hélder A

    2016-08-01

    Theranostic nanoparticles are emerging as potent tools for noninvasive diagnosis, treatment, and monitoring of solid tumors. Herein, an advanced targeted and multistimuli responsive theranostic platform is presented for the intracellular triggered delivery of doxorubicin. The system consists of a polymeric-drug conjugate solid nanoparticle containing encapsulated superparamagnetic iron oxide nanoparticles (IO@PNP) and decorated with a tumor homing peptide, iRGD. The production of this nanosystem is based on a pH-switch nanoprecipitation method in organic-free solvents, making it ideal for biomedical applications. The nanosystem shows sufficient magnetization saturation for magnetically guided therapy along with reduced cytotoxicity and hemolytic effects. IO@PNP are largely internalized by endothelial and metastatic cancer cells and iRGD decorated IO@PNP moderately enhance their internalization into endothelial cells, while no enhancement is found for the metastatic cancer cells. Poly(ethylene glycol)-block-poly(histidine) with pH-responsive and proton-sponge properties promotes prompt lysosomal escape once the nanoparticles are endocyted. In addition, the polymer-doxorubicin conjugate solid nanoparticles show both intracellular lysosomal escape and efficient translocation of doxorubicin to the nuclei of the cells via cleavage of the amide bond. Overall, IO@PNP-doxorubicin and the iRGD decorated counterpart demonstrate to enhance the toxicity of doxorubicin in cancer cells by improving the intracellular delivery of the drug carried in the IO@PNP. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Site-Selective Ribosylation of Fluorescent Nucleobase Analogs Using Purine-Nucleoside Phosphorylase as a Catalyst: Effects of Point Mutations

    Directory of Open Access Journals (Sweden)

    Alicja Stachelska-Wierzchowska

    2015-12-01

    Full Text Available Enzymatic ribosylation of fluorescent 8-azapurine derivatives, like 8-azaguanine and 2,6-diamino-8-azapurine, with purine-nucleoside phosphorylase (PNP as a catalyst, leads to N9, N8, and N7-ribosides. The final proportion of the products may be modulated by point mutations in the enzyme active site. As an example, ribosylation of the latter substrate by wild-type calf PNP gives N7- and N8-ribosides, while the N243D mutant directs the ribosyl substitution at N9- and N7-positions. The same mutant allows synthesis of the fluorescent N7-β-d-ribosyl-8-azaguanine. The mutated form of the E. coli PNP, D204N, can be utilized to obtain non-typical ribosides of 8-azaadenine and 2,6-diamino-8-azapurine as well. The N7- and N8-ribosides of the 8-azapurines can be analytically useful, as illustrated by N7-β-d-ribosyl-2,6-diamino-8-azapurine, which is a good fluorogenic substrate for mammalian forms of PNP, including human blood PNP, while the N8-riboside is selective to the E. coli enzyme.

  19. Enzymatic Synthesis of Highly Fluorescent 8-Azapurine Ribosides Using a Purine Nucleoside Phosphorylase Reverse Reaction: Variable Ribosylation Sites

    Directory of Open Access Journals (Sweden)

    Goran Mikleušević

    2013-10-01

    Full Text Available Various forms of purine-nucleoside phosphorylase (PNP were used as catalysts of enzymatic ribosylation of selected fluorescent 8-azapurines. It was found that the recombinant calf PNP catalyzes ribosylation of 2,6-diamino-8-azapurine in a phosphate-free medium, with ribose-1-phosphate as ribose donor, but the ribosylation site is predominantly N7 and N8, with the proportion of N8/N7 ribosylated products markedly dependent on the reaction conditions. Both products are fluorescent. Application of the E. coli PNP gave a mixture of N8 and N9-substituted ribosides. Fluorescence of the ribosylated 2,6-diamino-8-azapurine has been briefly characterized. The highest quantum yield, ~0.9, was obtained for N9-β-d-riboside (λmax 365 nm, while for N8-β-d-riboside, emitting at ~430 nm, the fluorescence quantum yield was found to be close to 0.4. Ribosylation of 8-azaguanine with calf PNP as a catalyst goes exclusively to N9. By contrast, the E. coli PNP ribosylates 8-azaGua predominantly at N9, with minor, but highly fluorescent products ribosylated at N8/N7.

  20. Do physical activity level and body mass index predict recovery from persistent neck pain in men and women of working age? A population-based cohort study.

    Science.gov (United States)

    Rasmussen-Barr, E; Bohman, T; Hallqvist, J; Holm, L W; Skillgate, E

    2013-09-01

    The study sought to examine the gender-specific effects of physical activity level and body mass index on recovery from persistent neck pain (PNP) among citizens of working age in Stockholm, Sweden. A population-based cohort of 1,730 subjects (18-65) with PNP answered surveys in 2002 and 2007. Prognostic factors were self-reported body mass index (BMI) and physical activity level (PAL) at baseline. Analyses were performed with odds ratios (OR) with corresponding 95 % confidence intervals (95 % CI). Women reporting higher physical activity level had higher odds of recovering from PNP than women with sedentary leisure time (OR of 1.5, 95 % CI 1.0-2.4), but no associations were found in men. No associations were found between BMI and recovery from PNP in any analyses. Physical activity seems to be associated with recovery from PNP in women and should therefore be encouraged. Future studies should continue investigating physical activity and lifestyle factors in relation to recovery from persistent neck pain, since these modifiable factors may be considered in interventions.

  1. Preliminary crystallographic studies of purine nucleoside phosphorylase from the cariogenic pathogen Streptococcus mutans

    International Nuclear Information System (INIS)

    Hou, Qiao-Ming; Liu, Xiang; Brostromer, Erik; Li, Lan-Fen; Su, Xiao-Dong

    2009-01-01

    Purine nucleoside phosphorylase (PNP), which is a pivotal enzyme in the nucleotide-salvage pathway, has been expressed in Escherichia coli strain BL21 (DE3) in a soluble form at a high level. After purification of the PNP enzyme, the protein was crystallized using the sitting-drop vapour-diffusion technique. The punA gene of the cariogenic pathogen Streptococcus mutans encodes purine nucleoside phosphorylase (PNP), which is a pivotal enzyme in the nucleotide-salvage pathway, catalyzing the phosphorolysis of purine nucleosides to generate purine bases and α-ribose 1-phosphate. In the present work, the PNP protein was expressed in Escherichia coli strain BL21 (DE3) in a soluble form at a high level. After purification of the PNP enzyme, the protein was crystallized using the sitting-drop vapour-diffusion technique; the crystals diffracted to 1.6 Å resolution at best. The crystals belonged to space group H3, with unit-cell parameters a = b = 113.0, c = 60.1 Å

  2. Plug-and-play monitoring and performance optimization for industrial automation processes

    CERN Document Server

    Luo, Hao

    2017-01-01

    Dr.-Ing. Hao Luo demonstrates the developments of advanced plug-and-play (PnP) process monitoring and control systems for industrial automation processes. With aid of the so-called Youla parameterization, a novel PnP process monitoring and control architecture (PnP-PMCA) with modularized components is proposed. To validate the developments, a case study on an industrial rolling mill benchmark is performed, and the real-time implementation on a laboratory brushless DC motor is presented. Contents PnP Process Monitoring and Control Architecture Real-Time Configuration Techniques for PnP Process Monitoring Real-Time Configuration Techniques for PnP Performance Optimization Benchmark Study and Real-Time Implementation Target Groups Researchers and students of Automation and Control Engineering Practitioners in the area of Industrial and Production Engineering The Author Hao Luo received the Ph.D. degree at the Institute for Automatic Control and Complex Systems (AKS) at the University of Duisburg-Essen, Germany, ...

  3. Electromyographic monitoring for prevention of phrenic nerve palsy in second-generation cryoballoon procedures.

    Science.gov (United States)

    Franceschi, Frédéric; Koutbi, Linda; Gitenay, Edouard; Hourdain, Jérome; Maille, Baptiste; Trévisan, Lory; Deharo, Jean-Claude

    2015-04-01

    Electromyography-guided phrenic nerve (PN) monitoring using a catheter positioned in a hepatic vein can aid in preventing phrenic nerve palsy (PNP) during cryoballoon ablation for atrial fibrillation. We wanted to evaluate the feasibility and efficacy of PN monitoring during procedures using second-generation cryoballoons. This study included 140 patients (43 women) in whom pulmonary vein isolation was performed using a second-generation cryoballoon. Electromyography-guided PN monitoring was performed by pacing the right PN at 60 per minute and recording diaphragmatic compound motor action potential (CMAP) via a quadripolar catheter positioned in a hepatic vein. If a 30% decrease in CMAP amplitude was observed, cryoapplication was discontinued with forced deflation to avoid a PNP. Monitoring was unfeasible in 8 of 140 patients (5.7%), PNP occurred in 1. Stable CMAP amplitudes were achieved before ablation in 132 of 140 patients (94.3%). In 18 of 132 patients (13.6%), a 30% decrease in CMAP amplitude occurred and cryoablation was discontinued. Each time, recovery of CMAP amplitude took <60 s. In 9 of 18 cases, a second cryoapplication in the same pulmonary vein was safely performed. We observed no PNP or complication related to electromyography-guided PN monitoring. Electromyography-guided PN monitoring using a catheter positioned in a hepatic vein seems feasible and effective to prevent PNP during cryoballoon ablation using second-generation cryoballoon. © 2015 American Heart Association, Inc.

  4. Identification of 5'-adenylylimidodiphosphate-hydrolyzing enzyme activity in rabbit taste bud cells using X-ray microanalysis

    International Nuclear Information System (INIS)

    Asanuma, N.

    1990-01-01

    X-ray microanalysis has been used to characterize the enzyme activity hydrolyzing the ATP analogue 5'-adenylylimidodiphosphate (AMP-PNP) in taste bud cells. Rabbit foliate papillae fixed with paraformaldehyde and glutaraldehyde were incubated cytochemically with AMP-PNP as the substrate and lead ion as capture agent. The reaction product which appeared on the microvilli of taste bud cells was examined using an energy dispersive X-ray microanalyzer connected to an analytical electron microscope. The X-ray spectrum thus obtained was compared with that obtained from the product obtained from the demonstration of ATPase activity. Comparison of the phosphorus/lead ratios in the two products showed that twice as much phosphorus was released from an AMP-PNP molecule by the activity in question compared with that released from an ATP molecule by ATPase activity. This indicates that the enzyme hydrolyzes AMP-PNP into AMP and imidodiphosphate and that the enzyme is adenylate cyclase or ATP pyrophosphohydrolase, which possesses a similar hydrolytic property, but not ATPase or alkaline phosphatase, which hydrolyzes AMP-PNP into ADP-NH2 and orthophosphate. This paper provides an example of the use of X-ray microanalysis as a tool for enzyme distinction. The method is applicable to a variety of enzymes and tissues

  5. [The role of the basophil activation test (BAT) in qualification for specific immunotherapy with inhalant allergens].

    Science.gov (United States)

    Bulanda, Małgorzata; Dyga, Wojciech; Rusinek, Barbara; Czarnobilska, Ewa

    Qualification for specific immunotherapy (SIT) according to the guidelines of the European Academy of Allergy and Clinical Immunology (EAACI) includes medical history, skin prik tests (SPT) and/or measuring the concentration of sIgE. It is necessary to perform additional diagnostic tests in case of discrepancies between the history and the results of SPT/sIgE or differences between SPT and sIgE. Basophil activation test (BAT) assesses the expression of activation markers of these cells, eg. CD63 and CD203c after stimulation. The aim of our study was to evaluate the usefulness of BAT in the qualification for the SIT in comparison to the SPT and sIgE and in case of discrepancies between the results of SPT and sIgE. The study included 30 patients with allergic rhinitis (AR) caused by allergy to house dust mite (Dermatophagoides pteronyssinus, Dp) or birch pollen qualified for SIT. All patients had SPT, sIgE and BAT determination. The group of patients with allergy to birch was a control group for Dp allergic and vice versa. BAT with CD63 antigen expression was performed using a Flow2CAST test. Basophils were stimulated with allergen preparation (50, 500, and 5000 SBU/ml concentrations). BAT results were expressed as a stimulation index (SI). For optimal concentrations of 50 and 500 SBU/ml parameters comparing BAT to SPT and sIgE as the gold standards were consecutively: sensitivity 82-100% and 93-100%, specificity 50-94% and 47-89%, positive predictive value 65- 94% and 61-87%, negative predictive value 86-100% and 93-100%. Correlation BAT - SPT and BAT - sIgE ranged within 0.59 to 0.84 and 0.51 to 0.72. BAT was helpful in 2 of 30 patients with incompatible results of SPT and sIgE. Optimal concentrations for basophil stimulation are 50 and 500 SBU/ ml. BAT may be useful diagnostic tool in the qualification for the SIT in case of discrepancies between the results of SPT and sIgE.

  6. Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

    Science.gov (United States)

    Shklyaev, A A; Latyshev, A V

    2016-12-01

    We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

  7. Detection of Pasteuria penetrans infection in Meloidogyne arenaria race 1 in planta by polymerase chain reaction.

    Science.gov (United States)

    Schmidt, L M; Preston, J F; Nong, G; Dickson, D W; Aldrich, H C

    2004-06-01

    We report on the development of a PCR-based assay to detect Pasteuria penetrans infection of Meloidogyne arenaria in planta using specific primers for recently sequenced sigE, spoIIAB and atpF genes of P. penetrans biotype P20. Amplification of these genes in crude DNA extracts of ground tomato root galls using real-time kinetic PCR distinguished infected from uninfected M. arenaria race 1 by analysis of consensus thresholds for single copy genes. Fluorescent in situ hybridization (FISH) using the sigE primer sequence as a probe shows hybridization to P. penetrans cells in various stages of vegetative (pre-endospore) development. Ratios of gene copies for sigE and 16S rDNA were obtained for P. penetrans and compared to Bacillus subtilis as a genomic paradigm of endospore-forming bacteria. Phylogenetic analysis of the sigE gene from Gram-positive, endospore-forming bacteria finds P. penetrans most closely related Paenbacillus polymyxa. The sporulation genes (spo genes), particularly sigE, have sequence diversity that recommends them for species and biotype differentiation of the numerous Pasteuria isolates that infect a large number of plant-parasitic nematodes.

  8. The Effects of Annealing Temperatures on Composition and Strain in Si x Ge1-x Obtained by Melting Growth of Electrodeposited Ge on Si (100).

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2014-02-24

    The effects of annealing temperatures on composition and strain in Si x Ge 1- x , obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm -1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of Si x Ge 1- x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

  9. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2014-01-01

    The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100°C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~00 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance. PMID:28788521

  10. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100

    Directory of Open Access Journals (Sweden)

    Mastura Shafinaz Zainal Abidin

    2014-02-01

    Full Text Available The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100 substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100 orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

  11. Poisson-Nernst-Planck equations with steric effects - non-convexity and multiple stationary solutions

    Science.gov (United States)

    Gavish, Nir

    2018-04-01

    We study the existence and stability of stationary solutions of Poisson-Nernst-Planck equations with steric effects (PNP-steric equations) with two counter-charged species. We show that within a range of parameters, steric effects give rise to multiple solutions of the corresponding stationary equation that are smooth. The PNP-steric equation, however, is found to be ill-posed at the parameter regime where multiple solutions arise. Following these findings, we introduce a novel PNP-Cahn-Hilliard model, show that it is well-posed and that it admits multiple stationary solutions that are smooth and stable. The various branches of stationary solutions and their stability are mapped utilizing bifurcation analysis and numerical continuation methods.

  12. Three-dimensional structure of E. Coli purine nucleoside phosphorylase at 0.99 Å resolution

    Energy Technology Data Exchange (ETDEWEB)

    Timofeev, V. I., E-mail: tostars@mail.ru [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Abramchik, Yu. A., E-mail: ugama@yandex.ru [Russian Academy of Sciences, Shemyakin–Ovchinnikov Institute of Bioorganic Chemistry (Russian Federation); Zhukhlistova, N. E., E-mail: inna@ns.crys.ras.ru [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Muravieva, T. I.; Esipov, R. S. [Russian Academy of Sciences, Shemyakin–Ovchinnikov Institute of Bioorganic Chemistry (Russian Federation); Kuranova, I. P. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2016-03-15

    Purine nucleoside phosphorylases (PNPs) catalyze the reversible phosphorolysis of nucleosides and are key enzymes involved in nucleotide metabolism. They are essential for normal cell function and can catalyze the transglycosylation. Crystals of E. coli PNP were grown in microgravity by the capillary counterdiffusion method through a gel layer. The three-dimensional structure of the enzyme was determined by the molecular-replacement method at 0.99 Å resolution. The structural features are considered, and the structure of E. coli PNP is compared with the structures of the free enzyme and its complexes with purine base derivatives established earlier. A comparison of the environment of the purine base in the complex of PNP with formycin A and of the pyrimidine base in the complex of uridine phosphorylase with thymidine revealed the main structural features of the base-binding sites. Coordinates of the atomic model determined with high accuracy were deposited in the Protein Data Bank (PDB-ID: 4RJ2).

  13. Synthesis, solid-state structure, and bonding analysis of a homoleptic beryllium azide

    Energy Technology Data Exchange (ETDEWEB)

    Naglav, Dominik; Tobey, Briac; Lyhs, Benjamin; Roemer, Beate; Blaeser, Dieter; Woelper, Christoph; Jansen, Georg; Schulz, Stephan [Faculty of Chemistry and Center for Nanointegration Duisburg-Essen (Cenide), Duisburg-Essen Univ., Essen (Germany)

    2017-07-10

    [Ph{sub 4}P]{sub 2}[Be(N{sub 3}){sub 4}] (1) and [PNP]{sub 2}[Be(N{sub 3}){sub 4}] (2; PNP=Ph{sub 3}PNPPh{sub 3}) were synthesized by reacting Be(N{sub 3}){sub 2} with [Ph{sub 4}P]N{sub 3} and [PNP]N{sub 3}. Compound 1 represents the first structurally characterized homoleptic beryllium azide. The electronic structure and bonding situation in the tetraazidoberyllate dianion [Be(N{sub 3}){sub 4}]{sup 2-} were investigated by quantum-chemical calculations (NPA, ELF, LOL). (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Quantitative proteome changes in Arabidopsis thaliana suspension-cultured cells in response to plant natriuretic peptides

    KAUST Repository

    Turek, Ilona; Wheeler, Janet I.; Gehring, Christoph A; Irving, Helen R.; Marondedze, Claudius

    2015-01-01

    Proteome changes in the Arabidopsis thaliana suspension cells in response to the A. thaliana plant natriuretic peptide (PNP), AtPNP-A (At2g18660) were assessed using quantitative proteomics employing tandem mass tag (TMT) labeling and tandem mass spectrometry (LC–MS/MS). In this study, we characterized temporal responses of suspension-cultured cells to 1 nM and 10 pM AtPNP-A at 0, 10 and 30 min post-treatment. Both concentrations we found to yield a distinct differential proteome signature. The data shown in this article are associated with the article “Plant natriuretic peptides induce a specific set of proteins diagnostic for an adaptive response to abiotic stress” by Turek et al. (Front. Plant Sci. 5 (2014) 661) and have been deposited to the ProteomeXchange with identifier PXD001386.

  15. Manganese-Catalyzed Aminomethylation of Aromatic Compounds with Methanol as a Sustainable C1 Building Block.

    Science.gov (United States)

    Mastalir, Matthias; Pittenauer, Ernst; Allmaier, Günter; Kirchner, Karl

    2017-07-05

    This study represents the first example of a manganese-catalyzed environmentally benign, practical three-component aminomethylation of activated aromatic compounds including naphtols, phenols, pyridines, indoles, carbazoles, and thiophenes in combination with amines and MeOH as a C1 source. These reactions proceed with high atom efficiency via a sequence of dehydrogenation and condensation steps which give rise to selective C-C and C-N bond formations, thereby releasing hydrogen and water. A well-defined hydride Mn(I) PNP pincer complex, recently developed in our laboratory, catalyzes this process in a very efficient way, and a total of 28 different aminomethylated products were synthesized and isolated yields of up to 91%. In a preliminary study, a related Fe(II) PNP pincer complex was shown to catalyze the methylation of 2-naphtol rather than its aminomethylation displaying again the divergent behavior of isoelectronic Mn(I) and Fe(II) PNP pincer systems.

  16. Quantitative proteome changes in Arabidopsis thaliana suspension-cultured cells in response to plant natriuretic peptides

    KAUST Repository

    Turek, Ilona

    2015-06-30

    Proteome changes in the Arabidopsis thaliana suspension cells in response to the A. thaliana plant natriuretic peptide (PNP), AtPNP-A (At2g18660) were assessed using quantitative proteomics employing tandem mass tag (TMT) labeling and tandem mass spectrometry (LC–MS/MS). In this study, we characterized temporal responses of suspension-cultured cells to 1 nM and 10 pM AtPNP-A at 0, 10 and 30 min post-treatment. Both concentrations we found to yield a distinct differential proteome signature. The data shown in this article are associated with the article “Plant natriuretic peptides induce a specific set of proteins diagnostic for an adaptive response to abiotic stress” by Turek et al. (Front. Plant Sci. 5 (2014) 661) and have been deposited to the ProteomeXchange with identifier PXD001386.

  17. Insights into phosphate cooperativity and influence of substrate modifications on binding and catalysis of hexameric purine nucleoside phosphorylases.

    Directory of Open Access Journals (Sweden)

    Priscila O de Giuseppe

    Full Text Available The hexameric purine nucleoside phosphorylase from Bacillus subtilis (BsPNP233 displays great potential to produce nucleoside analogues in industry and can be exploited in the development of new anti-tumor gene therapies. In order to provide structural basis for enzyme and substrates rational optimization, aiming at those applications, the present work shows a thorough and detailed structural description of the binding mode of substrates and nucleoside analogues to the active site of the hexameric BsPNP233. Here we report the crystal structure of BsPNP233 in the apo form and in complex with 11 ligands, including clinically relevant compounds. The crystal structure of six ligands (adenine, 2'deoxyguanosine, aciclovir, ganciclovir, 8-bromoguanosine, 6-chloroguanosine in complex with a hexameric PNP are presented for the first time. Our data showed that free bases adopt alternative conformations in the BsPNP233 active site and indicated that binding of the co-substrate (2'deoxyribose 1-phosphate might contribute for stabilizing the bases in a favorable orientation for catalysis. The BsPNP233-adenosine complex revealed that a hydrogen bond between the 5' hydroxyl group of adenosine and Arg(43* side chain contributes for the ribosyl radical to adopt an unusual C3'-endo conformation. The structures with 6-chloroguanosine and 8-bromoguanosine pointed out that the Cl(6 and Br(8 substrate modifications seem to be detrimental for catalysis and can be explored in the design of inhibitors for hexameric PNPs from pathogens. Our data also corroborated the competitive inhibition mechanism of hexameric PNPs by tubercidin and suggested that the acyclic nucleoside ganciclovir is a better inhibitor for hexameric PNPs than aciclovir. Furthermore, comparative structural analyses indicated that the replacement of Ser(90 by a threonine in the B. cereus hexameric adenosine phosphorylase (Thr(91 is responsible for the lack of negative cooperativity of phosphate binding

  18. Development and validation of a 2nd tier test for identification of purine nucleoside phosphorylase deficiency patients during expanded newborn screening by liquid chromatography-tandem mass spectrometry.

    Science.gov (United States)

    la Marca, Giancarlo; Giocaliere, Elisa; Malvagia, Sabrina; Villanelli, Fabio; Funghini, Silvia; Ombrone, Daniela; Della Bona, Maria; Forni, Giulia; Canessa, Clementina; Ricci, Silvia; Romano, Francesca; Guerrini, Renzo; Resti, Massimo; Azzari, Chiara

    2016-04-01

    Purine nucleoside phosphorylase (PNP) deficiency has been recently introduced in the newborn screening program in Tuscany. In order to improve the PNP screening efficiency, we developed a 2nd tier test to quantify PNP primary markers deoxyguanosine (dGuo) and deoxyinosine (dIno). Dried blood spots (DBS) samples were extracted with 200 μL of methanol and 100 μL of water (by two steps). Internal standards were added at a final concentration of 10 μmol/L. After extraction, samples were analysed by LC-MS/MS. The chromatographic run was performed in gradient mode by using a Synergi Fusion column. The assay was linear over a concentration range of 0.05-50 μmol/L (R2>0.999) for dGuo and 0.5-50 μmol/L (R2>0.998) for dIno. Intra- and interassay imprecision (mean CVs) for dIno and dGuo ranged from 2.9% to 12%. Limit of quantitaion (LOQ) were found to be 0.05 μmol/L and 0.5 μmol/L for dGuo and dIno, respectively. The reference ranges, obtained by measuring dGuo and dIno concentrations on DBS, were close to zero for both biomarkers. Moreover, DBS samples from seven patients with confirmed PNP were retrospectively evaluated and correctly identified. The LC-MS/MS method can reliably measure dIno and dGuo in DBS for the diagnosis of PNP. Validation data confirm the present method is characterised by good reproducibility, accuracy and imprecision for the quantitation of dIno and dGuo. The assay also appears suitable for use in monitoring treatment of PNP patients.

  19. Diagnosis of immunodeficiency caused by a purine nucleoside phosphorylase defect by using tandem mass spectrometry on dried blood spots.

    Science.gov (United States)

    la Marca, Giancarlo; Canessa, Clementina; Giocaliere, Elisa; Romano, Francesca; Malvagia, Sabrina; Funghini, Silvia; Moriondo, Maria; Valleriani, Claudia; Lippi, Francesca; Ombrone, Daniela; Della Bona, Maria Luisa; Speckmann, Carsten; Borte, Stephan; Brodszki, Nicholas; Gennery, Andrew R; Weinacht, Katja; Celmeli, Fatih; Pagel, Julia; de Martino, Maurizio; Guerrini, Renzo; Wittkowski, Helmut; Santisteban, Ines; Bali, Pawan; Ikinciogullari, Aydan; Hershfield, Michael; Notarangelo, Luigi D; Resti, Massimo; Azzari, Chiara

    2014-07-01

    Purine nucleoside phosphorylase (PNP) deficiency is a rare form of autosomal recessive combined primary immunodeficiency caused by a enzyme defect leading to the accumulation of inosine, 2'-deoxy-inosine (dIno), guanosine, and 2'-deoxy-guanosine (dGuo) in all cells, especially lymphocytes. Treatments are available and curative for PNP deficiency, but their efficacy depends on the early approach. PNP-combined immunodeficiency complies with the criteria for inclusion in a newborn screening program. This study evaluate whether mass spectrometry can identify metabolite abnormalities in dried blood spots (DBSs) from affected patients, with the final goal of individuating the disease at birth during routine newborn screening. DBS samples from 9 patients with genetically confirmed PNP-combined immunodeficiency, 10,000 DBS samples from healthy newborns, and 240 DBSs from healthy donors of different age ranges were examined. Inosine, dIno, guanosine, and dGuo were tested by using tandem mass spectrometry (TMS). T-cell receptor excision circle (TREC) and kappa-deleting recombination excision circle (KREC) levels were evaluated by using quantitative RT-PCR only for the 2 patients (patients 8 and 9) whose neonatal DBSs were available. Mean levels of guanosine, inosine, dGuo, and dIno were 4.4, 133.3, 3.6, and 3.8 μmol/L, respectively, in affected patients. No indeterminate or false-positive results were found. In patient 8 TREC levels were borderline and KREC levels were abnormal; in patient 9 TRECs were undetectable, whereas KREC levels were normal. TMS is a valid method for diagnosis of PNP deficiency on DBSs of affected patients at a negligible cost. TMS identifies newborns with PNP deficiency, whereas TREC or KREC measurement alone can fail. Copyright © 2014 American Academy of Allergy, Asthma & Immunology. Published by Mosby, Inc. All rights reserved.

  20. Silica chemically bonded N-propyl kriptofix 21 and 22 with immobilized palladium nanoparticles for solid phase extraction and preconcentration of some metal ions

    Energy Technology Data Exchange (ETDEWEB)

    Ghaedi, Mehrorang, E-mail: m_ghaedi@mail.yu.ac.ir [Chemistry Department, Yasouj University, Yasouj, 75914-353 (Iran, Islamic Republic of); Niknam, Khodabakhsh, E-mail: niknam@pgu.ac.ir [Chemistry Department, Faculty of Sciences, Persian Gulf University, Bushehr, 75169 (Iran, Islamic Republic of); Zamani, Saeed; Abasi Larki, Habib [Chemistry Department, Islamic Azad University, Omidiyeh Branch, Omidiyeh (Iran, Islamic Republic of); Roosta, Mostafa [Chemistry Department, Yasouj University, Yasouj, 75914-353 (Iran, Islamic Republic of); Soylak, Mustafa [Chemistry Department, University of Erciyes, 38039 Kayseri (Turkey)

    2013-08-01

    Silica gel chemically bonded N-propyl kriptofix 21 (SBNPK 21) and N-propyl kriptofix 22 (SBNPK 22) and subsequently immobilized with palladium nanoparticles (PNP-SBNPK 21 and PNP-SBNPK 22) to produce two new complexing lipophilic materials. Then these novel sorbents were applied for the enrichment of some metal ions and their subsequent determination by flame atomic absorption spectroscopy (FAAS). The influences of the variables including pH, amount of solid phase, sample flow rate, eluent conditions and sample volume on the metal ion recoveries were investigated. The detection limit of proposed method was in the interval 2.1–2.3 and 1.7–2.8 ng mL{sup −1} for PNP-SBNPK 21 and PNP-SBNPK 22 respectively, while the preconcentration factor was 80 for two sorbents. The relative standard deviations of recoveries were between 1.23–1.31 and 1.28–1.49 for PNP-SBNPK 21 and PNP-SBNPK 22 respectively. The method has high sorption-preconcentration efficiency even in the presence of various interfering ions. Due to the reasonable selectivity of proposed method, the relative standard deviation of recoveries of all understudied metal ions in some complicated matrices was less than 3.0%. Highlights: • Highly selective sorbents for solid phase extraction were synthesized. • The method has been successfully applied for the determination of trace metals ions. • Excellent properties of the sorbent have been illustrated in detail.