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Sample records for plasma-enhanced ti atomic

  1. Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition

    CERN Document Server

    Kim, H

    2002-01-01

    We have investigated the growth kinetics of plasma-enhanced Ti atomic layer deposition (ALD) using a quartz crystal microbalance. Ti ALD films were grown at temperatures from 20 to 200 deg. C using TiCl sub 4 as a source gas and rf plasma-produced atomic H as the reducing agent. Postdeposition ex situ chemical analyses of thin films showed that the main impurity is oxygen, mostly incorporated during the air exposure prior to analysis. The thickness per cycle, corresponding to the growth rate, was measured by quartz crystal microbalance as a function of various key growth parameters, including TiCl sub 4 and H exposure time, rf plasma power, and sample temperature. The growth rates were independent of TiCl sub 4 exposure above 1x10 sup 3 L, indicating typical ALD mode growth. The key kinetic parameters for Cl extraction reaction and TiCl sub 4 adsorption kinetics were obtained and the growth kinetics were modeled to predict the growth rates based upon these results. Also, the dependency of growth kinetics on d...

  2. Plasma-Enhanced Atomic Layer Deposition (PEALD of TiN using the Organic Precursor Tetrakis(ethylmethylamidoTitanium (TEMAT

    Directory of Open Access Journals (Sweden)

    Chen Z.X.

    2016-01-01

    Full Text Available This paper presents the plasma-enhanced atomic layer deposition (PEALD of titanium nitride (TiN using the organic precursor tetrakis(ethylmethylamidotitanium (TEMAT, with remote ammonia (NH3 plasma as reactant gas. This work investigates the impact of substrate temperature, from 150-350°C, and plasma times, from 5-30s, on deposition rate, resistivity, carbon content, N/Ti ratio and film density. The lowest resistivity of ~ 250 μΩ.cm was achieved at substrate temperatures 300-350°C and plasma time of 20s. At low substrate temperatures, although deposition was possible, carbon concentration was found to be higher, which thus affects film resistivity and density.

  3. Thermal and plasma enhanced atomic layer deposition of TiO{sub 2}: Comparison of spectroscopic and electric properties

    Energy Technology Data Exchange (ETDEWEB)

    Das, Chittaranjan, E-mail: chittaiit@yahoo.com; Henkel, Karsten; Tallarida, Massimo; Schmeißer, Dieter [Brandenburg University of Technology Cottbus-Senftenberg, Applied Physics and Sensors, K.-Wachsmann-Allee 17, D-03046 Cottbus (Germany); Gargouri, Hassan; Kärkkänen, Irina; Schneidewind, Jessica; Gruska, Bernd; Arens, Michael [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

    2015-01-15

    Titanium oxide (TiO{sub 2}) deposited by atomic layer deposition (ALD) is used as a protective layer in photocatalytic water splitting system as well as a dielectric in resistive memory switching. The way ALD is performed (thermally or plasma-assisted) may change the growth rate as well as the electronic properties of the deposited films. In the present work, the authors verify the influence of the ALD mode on functional parameters, by comparing the growth rate and electronic properties of TiO{sub 2} films deposited by thermal (T-) and plasma-enhanced (PE-) ALD. The authors complete the study with the electrical characterization of selected samples by means of capacitance–voltage and current–voltage measurements. In all samples, the authors found a significant presence of Ti{sup 3+} states, with the lowest content in the PE-ALD grown TiO{sub 2} films. The observation of Ti{sup 3+} states was accompanied by the presence of in-gap states above the valence band maximum. For films thinner than 10 nm, the authors found also a strong leakage current. Also in this case, the PE-ALD films showed the weakest leakage currents, showing a correlation between the presence of Ti{sup 3+} states and leakage current density.

  4. Growth of TiO2 with thermal and plasma enhanced atomic layer deposition.

    Science.gov (United States)

    Tallarida, Massimo; Friedrich, Daniel; Städter, Matthias; Michling, Marcel; Schmeisser, Dieter

    2011-09-01

    We show a comparative study of the TiO2 ALD with TTIP and either O2 or O2-plasma on Si/SiO2 substrates. In particular we compare the surface morphology and crystalline phase by means of Atomic Force Microscopy (AFM), X-ray Photoelectron Spectroscopy (XPS) and X-ray Absorption Spectroscopy (XAS) for different O2-plasma procedures upon changing the time between cycles and the N2-purging pressure. The AFM images show that already these parameters may induce structural changes in the TiO2 films grown by ALD, with the formation of crystallites with average lateral width varying between 15 and 80 nm. By means of XAS we also found that the crystallites have mixed anatase and rutile crystalline phases and that smaller crystallites have a greater rutile component than the larger ones.

  5. Room temperature plasma enhanced atomic layer deposition for TiO{sub 2} and WO{sub 3} films

    Energy Technology Data Exchange (ETDEWEB)

    Strobel, Alexander; Schnabel, Hans-Dieter, E-mail: Hans.Dieter.Schnabel@fh-zwickau.de; Reinhold, Ullrich; Rauer, Sebastian; Neidhardt, Andreas [Department of Physical Engineering and Informatics, University of Applied Science, Westsächsische Hochschule Zwickau, Dr.-Friedrichs-Ring 2a, 08056 Zwíckau (Germany)

    2016-01-15

    This paper presents a study on plasma enhanced atomic layer deposition (ALD) of TiO{sub 2} and WO{sub 3} films on silicon substrates. At low temperatures, ALD processes, which are not feasible at high temperatures, could be possible. For example, temperatures at 180 °C and above allow no WO{sub 3} ALD process with WF{sub 6} as a precursor because etching processes hinder film growth. Further low temperature deposition techniques are needed to coat temperature sensitive materials. For the deposition, WF{sub 6} and TiCl{sub 4} are used as metal precursors and O{sub 2} and H{sub 2}O as oxygen sources. The depositions were accomplished in the temperature range of 30 °C up to 180 °C for both metal oxides. Spectroscopic ellipsometry, x-ray reflection, and grazing incidence diffraction were used to investigate the deposited ALD thin films. Film growth, density, crystallinity, and roughness are discussed as functions of temperature after ensuring the ALD requirement of self-saturating adsorption. Growth rates and measured material properties are in good agreement with literature data.

  6. Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

    Energy Technology Data Exchange (ETDEWEB)

    Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

    2015-07-28

    Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

  7. Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

    Science.gov (United States)

    Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A.

    2015-07-01

    Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

  8. Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition

    KAUST Repository

    Zhao, Chao

    2013-09-01

    The growth of TiO2 films by plasma enhanced atomic layer deposition using Star-Ti as a precursor has been systematically studied. The conversion from amorphous to crystalline TiO2 was observed either during high temperature growth or annealing process of the films. The refractive index and bandgap of TiO2 films changed with the growth and annealing temperatures. The optimization of the annealing conditions for TiO2 films was also done by morphology and density studies. © 2013 Elsevier B.V. All rights reserved.

  9. Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane

    Energy Technology Data Exchange (ETDEWEB)

    Weeks, Stephen, E-mail: Stephen.Weeks@intermolecular.com; Nowling, Greg; Fuchigami, Nobi; Bowes, Michael; Littau, Karl [Intermolecular, 3011 North 1st Street, San Jose, California 95134 (United States)

    2016-01-15

    Progress in transistor scaling has increased the demands on the material properties of silicon nitride (SiN{sub x}) thin films used in device fabrication and at the same time placed stringent restrictions on the deposition conditions employed. Recently, low temperature plasma enhanced atomic layer deposition has emerged as a viable technique for depositing these films with a thermal budget compatible with semiconductor processing at sub-32 nm technology nodes. For these depositions, it is desirable to use precursors that are free from carbon and halogens that can incorporate into the film. Beyond this, it is necessary to develop processing schemes that minimize the wet etch rate of the film as it will be subjected to wet chemical processing in subsequent fabrication steps. In this work, the authors introduce low temperature deposition of SiN{sub x} using neopentasilane [NPS, (SiH{sub 3}){sub 4}Si] in a plasma enhanced atomic layer deposition process with a direct N{sub 2} plasma. The growth with NPS is compared to a more common precursor, trisilylamine [TSA, (SiH{sub 3}){sub 3 }N] at identical process conditions. The wet etch rates of the films deposited with NPS are characterized at different plasma conditions and the impact of ion energy is discussed.

  10. Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

    Energy Technology Data Exchange (ETDEWEB)

    Amusan, Akinwumi A., E-mail: akinwumi.amusan@ovgu.de; Kalkofen, Bodo; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Gargouri, Hassan; Wandel, Klaus; Pinnow, Cay [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

    2016-01-15

    Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt{sub 3}) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO{sub 2}, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detection limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10{sup −6} Ω cm was obtained for approximately 97 nm Ag film on SiO{sub 2}/Si substrate. The thickness was determined from the SEM cross section on the SiO{sub 2}/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO{sub 2} surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images.

  11. Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS

    Directory of Open Access Journals (Sweden)

    Stephan Ratzsch

    2015-11-01

    Full Text Available In this study, the influence of direct current (DC biasing on the growth of titanium dioxide (TiO2 layers and their nucleation behavior has been investigated. Titania films were prepared by plasma enhanced atomic layer deposition (PEALD using Ti(OiPr4 as metal organic precursor. Oxygen plasma, provided by remote inductively coupled plasma, was used as an oxygen source. The TiO2 films were deposited with and without DC biasing. A strong dependence of the applied voltage on the formation of crystallites in the TiO2 layer is shown. These crystallites form spherical hillocks on the surface which causes high surface roughness. By applying a higher voltage than the plasma potential no hillock appears on the surface. Based on these results, it seems likely, that ions are responsible for the nucleation and hillock growth. Hence, the hillock formation can be controlled by controlling the ion energy and ion flux. The growth per cycle remains unchanged, whereas the refractive index slightly decreases in the absence of energetic oxygen ions.

  12. Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study

    Energy Technology Data Exchange (ETDEWEB)

    Sowińska, Małgorzata, E-mail: malgorzata.sowinska@b-tu.de; Henkel, Karsten; Schmeißer, Dieter [Brandenburg University of Technology Cottbus-Senftenberg, Applied Physics and Sensors, K.-Wachsmann-Allee 17, 03046 Cottbus (Germany); Kärkkänen, Irina; Schneidewind, Jessica; Naumann, Franziska; Gruska, Bernd; Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

    2016-01-15

    The process parameters' impact of the plasma-enhanced atomic layer deposition (PE-ALD) method on the oxygen to nitrogen (O/N) ratio in titanium oxynitride (TiO{sub x}N{sub y}) films was studied. Titanium(IV)isopropoxide in combination with NH{sub 3} plasma and tetrakis(dimethylamino)titanium by applying N{sub 2} plasma processes were investigated. Samples were characterized by the in situ spectroscopic ellipsometry, x-ray photoelectron spectroscopy, and electrical characterization (current–voltage: I-V and capacitance–voltage: C-V) methods. The O/N ratio in the TiO{sub x}N{sub y} films is found to be very sensitive for their electric properties such as conductivity, dielectric breakdown, and permittivity. Our results indicate that these PE-ALD film properties can be tuned, via the O/N ratio, by the selection of the process parameters and precursor/coreactant combination.

  13. Thermal and plasma-enhanced oxidation of ALD TiN

    NARCIS (Netherlands)

    Groenland, A.W.; Brunets, I.; Boogaard, A.; Aarnink, A.A.I.; Kovalgin, A.Y.; Schmitz, J.

    2008-01-01

    Despite its high chemical stability, sputtered stoichiometric TiN can still be oxidized at temperatures below 400 ºC, whereas a non-stoichiometric TiN is known to oxidize even at room temperature. In this work, the oxidation behaviour of thin TiN layers, realized via atomic layer deposition (ALD), i

  14. Photoinduced Charge Transfer at Metal Oxide/Oxide Interfaces Prepared with Plasma Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Kaur, Manpuneet

    LiNbO3 and ZnO have shown great potential for photochemical surface reactions and specific photocatalytic processes. However, the efficiency of LiNbO3 is limited due to recombination or back reactions and ZnO exhibits a chemical instability in a liquid cell. In this dissertation, both materials were coated with precise thickness of metal oxide layers to passivate the surfaces and to enhance their photocatalytic efficiency. LiNbO 3 was coated with plasma enhanced atomic layer deposited (PEALD) ZnO and Al2O3, and molecular beam deposited TiO2 and VO2. On the other hand, PEALD ZnO and single crystal ZnO were passivated with PEALD SiO2 and Al2O3. Metal oxide/LiNbO3 heterostructures were immersed in aqueous AgNO3 solutions and illuminated with ultraviolet (UV) light to form Ag nanoparticle patterns. Alternatively, Al2O3 and SiO2/ZnO heterostructures were immersed in K3PO 4 buffer solutions and studied for photoelectrochemical reactions. A fundamental aspect of the heterostructures is the band alignment and band bending, which was deduced from in situ photoemission measurements. This research has provided insight to three aspects of the heterostructures. First, the band alignment at the interface of metal oxides/LiNbO 3, and Al2O3 or SiO2/ZnO were used to explain the possible charge transfer processes and the direction of carrier flow in the heterostructures. Second, the effect of metal oxide coatings on the LiNbO3 with different internal carrier concentrations was related to the surface photochemical reactions. Third is the surface passivation and degradation mechanism of Al2O 3 and SiO2 on ZnO was established. The heterostructures were characterized after stability tests using atomic force microscopy (AFM), scanning electron microscopy (SEM), and cross-section transmission electron microscopy (TEM). The results indicate that limited thicknesses of ZnO or TiO2 on polarity patterned LiNbO3 (PPLN) enhances the Ag+ photoinduced reduction process. ZnO seems more efficient

  15. TiN coating on wall of holes and stitches by pulsed DC plasma enhanced CVD

    Institute of Scientific and Technical Information of China (English)

    马胜利; 徐可为; 介万奇

    2003-01-01

    TiN coating samples with narrow-stitch or deep-hole of different sizes and real dies with complex shape were processed by a larger-scale pulsed plasma enhanced CVD(PECVD) reactor. Scanning electron microscopy, optical microscopy, Vicker's hardness and interfacial adhesion tests were conducted to find the relation between the microstructure and properties of TiN coating on a flat and an inner surface. The results indicate that the inner-wall of holes (d>2 mm) and inner surface of narrow-stitches (d>3 mm) can be coated with the aid of pulsed DC plasma in an industrial-scale reactor. The quality of coatings on different surfaces is almost the same. The coating was applied to aluminum extrusion mould, and the mould life was increased at least by one time.

  16. Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography

    Science.gov (United States)

    Liu, Zhengjun; Shah, Ali; Alasaarela, Tapani; Chekurov, Nikolai; Savin, Hele; Tittonen, Ilkka

    2017-02-01

    In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO2 hard mask. The PEALD process greatly decreases the deposition temperature of the SiO2 hard mask. FIB Ga+ ion implantation on the deposited SiO2 layer increases the wet etch resistivity of the irradiated region. A programmed exposure in FIB followed by development in a wet etchant enables the precisely defined nanoscale patterning. The combination of FIB exposure parameters and the development time provides greater freedom for optimization. The developed process provides high pattern dimension accuracy over the tested range of 90–210 nm. Utilizing the SiO2 mask developed in this work, silicon nanopillars with 40 nm diameter were successfully fabricated with cryogenic deep reactive ion etching and the aspect ratio reached 16:1. The fabricated mask is suitable for sub-100 nm high aspect ratio silicon structure fabrication.

  17. Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Jhang, Pei-Ci; Lu, Chi-Pin; Shieh, Jung-Yu; Yang, Ling-Wu; Yang, Tahone; Chen, Kuang-Chao; Lu, Chih-Yuan

    2017-07-01

    An N-rich silicon nitride film, with a lower refractive index (RI) than the stoichiometric silicon nitride (RI = 2.01), was deposited by alternating the exposure of dichlorosilane (DCS, SiH2Cl2) and that of ammonia (NH3) in a plasma-enhanced atomic layer deposition (PEALD) process. In this process, the plasma ammonia was easily decomposed to reactive radicals by RF power activating so that the N-rich silicon nitride was easily formed by excited ammonia radicals. The growth kinetics of N-rich silicon nitride were examined at various deposition temperatures ranging from 400 °C to 630 °C; the activation energy (Ea) decreased as the deposition temperature decreased below 550 °C. N-rich silicon nitride film with a wide range of values of refractive index (RI) (RI = 1.86-2.00) was obtained by regulating the deposition temperature. At the optimal deposition temperature, the effects of RF power, NH3 flow rate and NH3 flow time were on the characteristics of the N-rich silicon nitride film were evaluated. The results thus reveal that the properties of the N-rich silicon nitride film that was formed by under plasma-enhanced atomic layer deposition (PEALD) are dominated by deposition temperature. In charge trap flash (CTF) study, an N-rich silicon nitride film was applied to MAONOS device as a charge-trapping layer. The films exhibit excellent electron trapping ability and favor a fresh cell data retention performance as the deposition temperature decreased.

  18. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

    Energy Technology Data Exchange (ETDEWEB)

    Dechana, A. [Program of Physics and General Science, Faculty of Science and Technology, Songkhla Rajabhat University, Songkhla 90000 (Thailand); Thamboon, P. [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Boonyawan, D., E-mail: dheerawan.b@cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2014-10-15

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al{sub 2}O{sub 3} layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al{sub 2}O{sub 3} films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

  19. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

    Science.gov (United States)

    Dechana, A.; Thamboon, P.; Boonyawan, D.

    2014-10-01

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

  20. Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Broas, Mikael, E-mail: mikael.broas@aalto.fi; Vuorinen, Vesa [Department of Electrical Engineering and Automation, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sippola, Perttu; Pyymaki Perros, Alexander; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sajavaara, Timo [Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40014 Jyväskylä (Finland); Paulasto-Kröckel, Mervi [Department of Electrical Engineering and Automation, Aalto University. P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland)

    2016-07-15

    Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N{sub 2}:H{sub 2} plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.

  1. Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor.

    Science.gov (United States)

    Park, Jae-Min; Jang, Se Jin; Yusup, Luchana L; Lee, Won-Jun; Lee, Sang-Ick

    2016-08-17

    We report the plasma-enhanced atomic layer deposition (PEALD) of silicon nitride thin film using a silylamine compound as the silicon precursor. A series of silylamine compounds were designed by replacing SiH3 groups in trisilylamine by dimethylaminomethylsilyl or trimethylsilyl groups to obtain sufficient thermal stability. The silylamine compounds were synthesized through redistribution, amino-substitution, lithiation, and silylation reactions. Among them, bis(dimethylaminomethylsilyl)trimethylsilyl amine (C9H29N3Si3, DTDN2-H2) was selected as the silicon precursor because of the lowest bond dissociation energy and sufficient vapor pressures. The energies for adsorption and reaction of DTDN2-H2 with the silicon nitride surface were also calculated by density functional theory. PEALD silicon nitride thin films were prepared using DTDN2-H2 and N2 plasma. The PEALD process window was between 250 and 400 °C with a growth rate of 0.36 Å/cycle. The best film quality was obtained at 400 °C with a RF power of 100 W. The PEALD film prepared showed good bottom and sidewall coverages of ∼80% and ∼73%, respectively, on a trench-patterned wafer with an aspect ratio of 5.5.

  2. The physical properties of cubic plasma-enhanced atomic layer deposition TaN films

    Science.gov (United States)

    Kim, H.; Lavoie, C.; Copel, M.; Narayanan, V.; Park, D.-G.; Rossnagel, S. M.

    2004-05-01

    Plasma-enhanced atomic layer deposition (PE-ALD) is a promising technique to produce high quality metal and nitride thin films at low growth temperature. In this study, very thin (<10 nm) low resistivity (350 μΩ cm) cubic TaN Cu diffusion barrier were deposited by PE-ALD from TaCl5 and a plasma of both hydrogen and nitrogen. The physical properties of TaN thin films including microstructure, conformality, roughness, and thermal stability were investigated by various analytical techniques including x-ray diffraction, medium energy ion scattering, and transmission electron microscopy. The Cu diffusion barrier properties of PE-ALD TaN thin films were studied using synchrotron x-ray diffraction, optical scattering, and sheet resistance measurements during thermal annealing of the test structures. The barrier failure temperatures were obtained as a function of film thickness and compared with those of PE-ALD Ta, physical vapor deposition (PVD) Ta, and PVD TaN. A diffusion kinetics analysis showed that the microstructure of the barrier materials is one of the most critical factors for Cu diffusion barrier performance.

  3. Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition

    Science.gov (United States)

    Dendooven, Jolien; Solano, Eduardo; Minjauw, Matthias M.; Van de Kerckhove, Kevin; Coati, Alessandro; Fonda, Emiliano; Portale, Giuseppe; Garreau, Yves; Detavernier, Christophe

    2016-11-01

    We report the design of a mobile setup for synchrotron based in situ studies during atomic layer processing. The system was designed to facilitate in situ grazing incidence small angle x-ray scattering (GISAXS), x-ray fluorescence (XRF), and x-ray absorption spectroscopy measurements at synchrotron facilities. The setup consists of a compact high vacuum pump-type reactor for atomic layer deposition (ALD). The presence of a remote radio frequency plasma source enables in situ experiments during both thermal as well as plasma-enhanced ALD. The system has been successfully installed at different beam line end stations at the European Synchrotron Radiation Facility and SOLEIL synchrotrons. Examples are discussed of in situ GISAXS and XRF measurements during thermal and plasma-enhanced ALD growth of ruthenium from RuO4 (ToRuS™, Air Liquide) and H2 or H2 plasma, providing insights in the nucleation behavior of these processes.

  4. Properties of HfAlO film deposited by plasma enhanced atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Duo [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Cheng, Xinhong, E-mail: xh_cheng@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Jia, Tingting; Zheng, Li; Xu, Dawei; Wang, Zhongjian; Xia, Chao; Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China)

    2013-07-15

    Plasma enhanced atomic layer deposition (PEALD) method can reduce film growing temperature, and allow in situ plasma treatment. In this work, HfAlO and HfO{sub 2} films were deposited with PEALD at 160 °C. Microstructure analysis showed that both films were amorphous after rapid thermal annealing (RTA) treatment, and HfAlO sample showed better interfacial structure than HfO{sub 2}. X-ray photoelectron spectroscopy (XPS) spectra indicated that main component of the interfacial layer of HfAlO sample was Hf–Si–O and Al–Si–O bonds, the valence band offset value between the HfAlO film and Si substrate was calculated to be 2.5 eV. The dominant leakage current mechanism of the samples was Schottky emission at a low electric field (<1.4 MV/cm), and Poole–Frenkel emission mechanism at a higher electric field (>1.4 MV/cm). The equivalent oxide thicknesses (EOT) of the HfAlO samples were 1.0 nm and 1.3 nm, respectively. The density of interface states between dielectric and substrate were calculated to be 1.2 × 10{sup 12} eV{sup −1}cm{sup −2} and 1.3 × 10{sup 12} eV{sup −1}cm{sup −2}, respectively. In comparison with HfO{sub 2} film, HfAlO film has good interfacial structure and electrical performance.

  5. Plasma-enhanced atomic-layer-deposited MoO{sub x} emitters for silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ziegler, Johannes; Schneider, Thomas; Sprafke, Alexander N. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Mews, Mathias; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institute for Silicon-Photovoltaics, Berlin (Germany); Kaufmann, Kai [Fraunhofer Center for Silicon Photovoltaics CSP, Halle (Germany); University of Applied Sciences, Hochschule Anhalt Koethen, Koethen (Germany); Wehrspohn, Ralf B. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Fraunhofer Institute for Mechanics of Materials IWM Halle, Halle (Germany)

    2015-09-15

    A method for the deposition of molybdenum oxide (MoO{sub x}) with high growth rates at temperatures below 200 C based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric MoO{sub x} films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed. (orig.)

  6. Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

    2017-03-01

    Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

  7. Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks

    Science.gov (United States)

    Chernikova, A. G.; Kuzmichev, D. S.; Negrov, D. V.; Kozodaev, M. G.; Polyakov, S. N.; Markeev, A. M.

    2016-06-01

    We report the possibility of employment of low temperature (≤330 °C) plasma-enhanced atomic layer deposition for the formation of both electrodes and hafnium-oxide based ferroelectric in the metal-insulator-metal structures. The structural and ferroelectric properties of La doped HfO2-based layers and its evolution with the change of both La content (2.1, 3.7 and 5.8 at. %) and the temperature of the rapid thermal processing (550-750 °C) were investigated in detail. Ferroelectric properties emerged only for 2.1 and 3.7 at. % of La due to the structural changes caused by the given doping levels. Ferroelectric properties were also found to depend strongly on annealing temperature, with the most robust ferroelectric response for lowest La concentration and intermediate 650 °C annealing temperature. The long term wake-up effect and such promising endurance characteristics as 3 × 108 switches by bipolar voltage cycles with 30 μs duration and ± 3 MV/cm amplitude without any decrease of remnant polarization value were demonstrated.

  8. The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2–N2 capacitive discharges

    Science.gov (United States)

    Napari, M.; Tarvainen, O.; Kinnunen, S.; Arstila, K.; Julin, J.; Fjellvåg, Ø. S.; Weibye, K.; Nilsen, O.; Sajavaara, T.

    2017-03-01

    Two distinguishable plasma modes in the O2–N2 radio frequency capacitively coupled plasma (CCP) used in remote plasma-enhanced atomic layer deposition (PEALD) were observed. Optical emission spectroscopy and spectra interpretation with rate coefficient analysis of the relevant processes were used to connect the detected modes to the α and γ modes of the CCP discharge. To investigate the effect of the plasma modes on the PEALD film growth, ZnO and TiO2 films were deposited using both modes and compared to the films deposited using direct plasma. The growth rate, thickness uniformity, elemental composition, and crystallinity of the films were found to correlate with the deposition mode. In remote CCP operations the transition to the γ mode can result in a parasitic discharge leading to uncontrollable film growth and thus limit the operation parameters of the capacitive discharge in the PEALD applications.

  9. Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology

    Energy Technology Data Exchange (ETDEWEB)

    Burke, Micheal, E-mail: micheal.burke@tyndall.ie; Blake, Alan; Povey, Ian M.; Schmidt, Michael; Petkov, Nikolay; Carolan, Patrick; Quinn, Aidan J., E-mail: aidan.quinn@tyndall.ie [Tyndall National Institute, University College Cork, Cork (Ireland)

    2014-05-15

    A design of experiments methodology was used to optimize the sheet resistance of titanium nitride (TiN) films produced by plasma-enhanced atomic layer deposition (PE-ALD) using a tetrakis(dimethylamino)titanium precursor in a N{sub 2}/H{sub 2} plasma at low temperature (250 °C). At fixed chamber pressure (300 mTorr) and plasma power (300 W), the plasma duration and N{sub 2} flow rate were the most significant factors. The lowest sheet resistance values (163 Ω/sq. for a 20 nm TiN film) were obtained using plasma durations ∼40 s, N{sub 2} flow rates >60 standard cubic centimeters per minute, and purge times ∼60 s. Time of flight secondary ion mass spectroscopy data revealed reduced levels of carbon contaminants in the TiN films with lowest sheet resistance (163 Ω/sq.), compared to films with higher sheet resistance (400–600 Ω/sq.) while transmission electron microscopy data showed a higher density of nanocrystallites in the low-resistance films. Further significant reductions in sheet resistance, from 163 Ω/sq. to 70 Ω/sq. for a 20 nm TiN film (corresponding resistivity ∼145 μΩ·cm), were achieved by addition of a postcycle Ar/N{sub 2} plasma step in the PE-ALD process.

  10. Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements.

    Science.gov (United States)

    Melo, Luis; Burton, Geoff; Kubik, Philip; Wild, Peter

    2016-04-04

    Long period gratings (LPGs) are coated with hafnium oxide using plasma-enhanced atomic layer deposition (PEALD) to increase the sensitivity of these devices to the refractive index of the surrounding medium. PEALD allows deposition at low temperatures which reduces thermal degradation of UV-written LPGs. Depositions targeting three different coating thicknesses are investigated: 30 nm, 50 nm and 70 nm. Coating thickness measurements taken by scanning electron microscopy of the optical fibers confirm deposition of uniform coatings. The performance of the coated LPGs shows that deposition of hafnium oxide on LPGs induces two-step transition behavior of the cladding modes.

  11. Thermal and plasma enhanced atomic layer deposition of SiO{sub 2} using commercial silicon precursors

    Energy Technology Data Exchange (ETDEWEB)

    Putkonen, Matti, E-mail: matti.putkonen@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, Espoo (Finland); Laboratory of Inorganic Chemistry, Aalto University School of Chemical Technology, P.O. Box 16100, FI-00076, Espoo (Finland); Bosund, Markus [Beneq Oy, Ensimmäinen savu, FI-01510, Vantaa (Finland); Ylivaara, Oili M.E.; Puurunen, Riikka L.; Kilpi, Lauri; Ronkainen, Helena [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, Espoo (Finland); Sintonen, Sakari; Ali, Saima; Lipsanen, Harri [Aalto University School of Electrical Engineering, Department of Micro- and Nanosciences, P.O. Box 13500, FI-00076 Espoo (Finland); Liu, Xuwen; Haimi, Eero; Hannula, Simo-Pekka [Aalto University School of Chemical Technology, Department of Materials Science and Engineering, P.O. Box 16200, FI-00076 Espoo (Finland); Sajavaara, Timo [University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland); Buchanan, Iain; Karwacki, Eugene [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195 (United States); Vähä-Nissi, Mika [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, Espoo (Finland)

    2014-05-02

    In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R and D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O{sub 3} as oxidant and with substrates measuring 150 × 400 mm. The SiO{sub 2} film deposition rate was greatly dependent on the precursors used, highest values being 1.5–2.0 Å/cycle at 30–200 °C for one precursor with an O{sub 2} plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures. - Highlights: • SiO{sub 2} thin film is deposited by thermal and plasma enhanced atomic layer deposition (PEALD). • We report low-temperature deposition of SiO{sub 2} even at 30 °C by PEALD. • Scaling up of the atomic layer deposition processes to industrial batch is reported. • Deposited films had low low compressive residual stress and good conformality.

  12. Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers

    Science.gov (United States)

    Karbasian, Golnaz

    The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performance and reliability of the circuits, minimization of the energy consumption in logic devices is now the center of attention. According to the International Technology Roadmaps for Semiconductors (ITRS), single electron transistors (SETs) hold the promise of achieving the lowest power of any known logic device, as low as 1x10-18 J per switching event. Moreover, SETs are the most sensitive electrometers to date, and are capable of detecting a fraction of an electron charge. Despite their low power consumption and high sensitivity for charge detection, room temperature operation of these devices is quite challenging mainly due to lithographical constraints in fabricating structures with the required dimensions of less than 10 nm. Silicon based SETs have been reported to operate at room temperature. However, they all suffer from significant variation in batch-to-batch performance, low fabrication yield, and temperature-dependent tunnel barrier height. In this project, we explored the fabrication of SETs featuring metal-insulator-metal (MIM) tunnel junctions. While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Therefore, metal SETs are potentially more predictable in behavior, making them easier to incorporate into circuits, and easier to check against theoretical models. Here, the proposed fabrication method takes advantage of unique properties of chemical mechanical polishing (CMP) and plasma enhanced atomic layer deposition (PEALD). Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam

  13. Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

    Energy Technology Data Exchange (ETDEWEB)

    Suh, Sungin; Kim, Jun-Rae; Kim, Seongkyung; Hwang, Cheol Seong; Kim, Hyeong Joon, E-mail: thinfilm@snu.ac.kr [Department of Materials Science and Engineering with Inter-University Semiconductor Research Center (ISRC), Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 08826 (Korea, Republic of); Ryu, Seung Wook, E-mail: tazryu78@gmail.com [Department of Electrical Engineering, Stanford University, Stanford, California 94305-2311 (United States); Cho, Seongjae [Department of Electronic Engineering and New Technology Component & Material Research Center (NCMRC), Gachon University, Seongnam-si, Gyeonggi-do 13120 (Korea, Republic of)

    2016-01-15

    It has not been an easy task to deposit SiN at low temperature by conventional plasma-enhanced atomic layer deposition (PE-ALD) since Si organic precursors generally have high activation energy for adsorption of the Si atoms on the Si-N networks. In this work, in order to achieve successful deposition of SiN film at low temperature, the plasma processing steps in the PE-ALD have been modified for easier activation of Si precursors. In this modification, the efficiency of chemisorption of Si precursor has been improved by additional plasma steps after purging of the Si precursor. As the result, the SiN films prepared by the modified PE-ALD processes demonstrated higher purity of Si and N atoms with unwanted impurities such as C and O having below 10 at. % and Si-rich films could be formed consequently. Also, a very high step coverage ratio of 97% was obtained. Furthermore, the process-optimized SiN film showed a permissible charge-trapping capability with a wide memory window of 3.1 V when a capacitor structure was fabricated and measured with an insertion of the SiN film as the charge-trap layer. The modified PE-ALD process using the activated Si precursor would be one of the most practical and promising solutions for SiN deposition with lower thermal budget and higher cost-effectiveness.

  14. Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

    Directory of Open Access Journals (Sweden)

    Jörg Haeberle

    2013-11-01

    Full Text Available We report on results on the preparation of thin (2O3 films on silicon substrates using thermal atomic layer deposition (T-ALD and plasma enhanced atomic layer deposition (PE-ALD in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate over 4” wafers and correlate them to X-ray photoelectron spectroscopy (XPS results. The 200 °C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.

  15. Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition

    Science.gov (United States)

    Park, Hamin; Kim, Tae Keun; Cho, Sung Woo; Jang, Hong Seok; Lee, Sang Ick; Choi, Sung-Yool

    2017-01-01

    Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray diffraction. The film composition studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy corresponded to a B:N stoichiometric ratio close to 1:1, and the band-gap value (5.65 eV) obtained by electron energy loss spectroscopy was consistent with the dielectric properties. The h-BN-containing capacitors were characterized by highly uniform properties, a reasonable dielectric constant (3), and low leakage current density, while graphene on h-BN substrates exhibited enhanced electrical performance such as the high carrier mobility and neutral Dirac voltage, which resulted from the low density of charged impurities on the h-BN surface.

  16. Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films.

    Science.gov (United States)

    Haeberle, Jörg; Henkel, Karsten; Gargouri, Hassan; Naumann, Franziska; Gruska, Bernd; Arens, Michael; Tallarida, Massimo; Schmeißer, Dieter

    2013-01-01

    We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4" wafers and correlate them to X-ray photoelectron spectroscopy (XPS) results. The 200 °C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.

  17. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Science.gov (United States)

    Provine, J.; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin; Kim, Ki-Hyun; Prinz, Fritz B.

    2016-06-01

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film's WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  18. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Provine, J., E-mail: jprovine@stanford.edu; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Kim, Ki-Hyun [Manufacturing Technology Center, Samsung Electronics, Suwon, Gyeonggi-Do (Korea, Republic of); Prinz, Fritz B. [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2016-06-15

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiN{sub x}), particularly for use a low k dielectric spacer. One of the key material properties needed for SiN{sub x} films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiN{sub x} and evaluate the film’s WER in 100:1 dilutions of HF in H{sub 2}O. The remote plasma capability available in PEALD, enabled controlling the density of the SiN{sub x} film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiN{sub x} of 6.1 Å/min, which is similar to WER of SiN{sub x} from LPCVD reactions at 850 °C.

  19. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Directory of Open Access Journals (Sweden)

    J. Provine

    2016-06-01

    Full Text Available The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD of silicon nitride (SiNx, particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER in hydrofluoric (HF acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD of SiNx and evaluate the film’s WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  20. Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hoffmann, Lukas, E-mail: lhoffmann@uni-wuppertal.de; Theirich, Detlef; Hasselmann, Tim; Räupke, André; Schlamm, Daniel; Riedl, Thomas, E-mail: t.riedl@uni-wuppertal.de [Institute of Electronic Devices, University of Wuppertal, Rainer-Gruenter-Str. 21, 42119 Wuppertal (Germany)

    2016-01-15

    This paper reports on aluminum oxide (Al{sub 2}O{sub 3}) thin film gas permeation barriers fabricated by atmospheric pressure atomic layer deposition (APPALD) using trimethylaluminum and an Ar/O{sub 2} plasma at moderate temperatures of 80 °C in a flow reactor. The authors demonstrate the ALD growth characteristics of Al{sub 2}O{sub 3} films on silicon and indium tin oxide coated polyethylene terephthalate. The properties of the APPALD-grown layers (refractive index, density, etc.) are compared to that deposited by conventional thermal ALD at low pressures. The films films deposited at atmospheric pressure show water vapor transmission rates as low as 5 × 10{sup −5} gm{sup −2}d{sup −1}.

  1. Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride

    Science.gov (United States)

    Yang, Jialing; Eller, Brianna S.; Zhu, Chiyu; England, Chris; Nemanich, Robert J.

    2012-09-01

    Al2O3 films, HfO2 films, and HfO2/Al2O3 stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H2/N2 plasma at 650 °C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 °C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 °C. The valence band and conduction band offsets (VBOs and CBOs) of the Al2O3/GaN and HfO2/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations based on the electron affinity model and charge neutrality level model. Moreover, subsequent annealing had little effect on these offsets; however, the GaN band bending did change depending on the annealing and processing. An Al2O3 layer was investigated as an interfacial passivation layer (IPL), which, as results suggest, may lead to improved stability, performance, and reliability of HfO2/IPL/GaN structures. The VBOs were ˜0.1 and 1.3 eV, while the deduced CBOs were 0.6 and 1.1 eV for HfO2 with respect to Al2O3 and GaN, respectively.

  2. Low temperature plasma-enhanced ALD TiN ultrathin films for Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based ferroelectric MIM structures

    Energy Technology Data Exchange (ETDEWEB)

    Kozodaev, M.G.; Chernikova, A.G.; Markeev, A.M. [Moscow Institute of Physics and Technology, Institutsky Lane 9, Dolgoprudny, Moscow Region 141700 (Russian Federation); Lebedinskii, Y.Y. [Moscow Institute of Physics and Technology, Institutsky Lane 9, Dolgoprudny, Moscow Region 141700 (Russian Federation); National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoye Shosse 31, 115409 Moscow (Russian Federation); Polyakov, S.N. [Technological Institute for Superhard and Novel Carbon Materials, Tsentral' naya str. 7a, 142190, Troitsk, Moscow (Russian Federation)

    2017-06-15

    In this work chemical and electrical properties of TiN films, grown by low temperature plasma-enhanced atomic layer deposition (PE-ALD) process from TiCl{sub 4} and NH{sub 3}, were investigated. Electrical resistivity as low as 250 μOhm x cm, as well as the lowest Cl impurity content, was achieved at 320 C. Full-ALD Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based metal-ferroelectric-metal capacitor with TiN electrodes was fabricated and its electrical properties were investigated. It was also shown that the proposed PE-ALD process provides an early film continuity, which was confirmed by ultrathin fully continuous film growth. Such ultrathin (3 nm) and fully continuous TiN film was also successfully implemented as the top electrode to Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based ferroelectric capacitor. Angle-resolved X-ray photoelectron spectroscopy (AR-XPS) was used for its thickness determination and a visible wake-up effect in underlying Hf{sub 0.5}Zr{sub 0.5}O{sub 2} layer was clearly observed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Plasma-enhanced atomic layer deposition of nanoscale yttria-stabilized zirconia electrolyte for solid oxide fuel cells with porous substrate.

    Science.gov (United States)

    Ji, Sanghoon; Cho, Gu Young; Yu, Wonjong; Su, Pei-Chen; Lee, Min Hwan; Cha, Suk Won

    2015-02-11

    Nanoscale yttria-stabilized zirconia (YSZ) electrolyte film was deposited by plasma-enhanced atomic layer deposition (PEALD) on a porous anodic aluminum oxide supporting substrate for solid oxide fuel cells. The minimum thickness of PEALD-YSZ electrolyte required for a consistently high open circuit voltage of 1.17 V at 500 °C is 70 nm, which is much thinner than the reported thickness of 180 nm using nonplasmatic ALD and is also the thinnest attainable value reported in the literatures on a porous supporting substrate. By further reducing the electrolyte thickness, the grain size reduction resulted in high surface grain boundary density at the cathode/electrolyte interface.

  4. SiO{sub 2}/TiO{sub 2} thin films with variable refractive index prepared by ion beam induced and plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gracia, F. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Yubero, F. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Holgado, J.P. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Gonzalez-Elipe, A.R. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain)]. E-mail: arge@icmse.csic.es; Girardeau, T. [Laboratoire de Metallurgie Physique de Poitiers, UMR 6630 CNRS, Bat SP2MI BP 30179, 86962-Futuroscope-Chasseneuil Cedex (France)

    2006-04-03

    SiO{sub 2}/TiO{sub 2} optical thin films with variable compositions have been prepared by ion beam induced and plasma enhanced chemical vapour deposition (IBICVD and PECVD). While the films obtained by IBICVD were very compact, the PECVD ones with a high content of Ti presented a columnar microstructure. The formation of Si-O-Ti bonds and a change in the environment around titanium from four- to six-coordinated has been proved by vibrational and X-ray absorption spectroscopies. The refractive index increased with the titanium content from 1.45 to 2.46 or 2.09 for, respectively, the IBICVD and PECVD films. Meanwhile, the band gap decreased, first sharply and then more smoothly up to the value of pure TiO{sub 2}. It is concluded that the optical properties of SiO{sub 2}/TiO{sub 2} thin films can be properly tailored by using these two procedures.

  5. Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell

    Directory of Open Access Journals (Sweden)

    Mi-jin Jin

    2013-10-01

    Full Text Available We studied the tuning of structural and optical properties of ZnO thin film and its correlation to the efficiency of inverted solar cell using plasma-enhanced atomic layer deposition (PEALD. The sequential injection of DEZn and O2 plasma was employed for the plasma-enhanced atomic layer deposition of ZnO thin film. As the growth temperature of ZnO film was increased from 100 °C to 300 °C, the crystallinity of ZnO film was improved from amorphous to highly ordered (002 direction ploy-crystal due to self crystallization. Increasing oxygen plasma time in PEALD process also introduces growing of hexagonal wurtzite phase of ZnO nanocrystal. Excess of oxygen plasma time induces enhanced deep level emission band (500 ∼ 700 nm in photoluminescence due to Zn vacancies and other defects. The evolution of structural and optical properties of PEALD ZnO films also involves in change of electrical conductivity by 3 orders of magnitude. The highly tunable PEALD ZnO thin films were employed as the electron conductive layers in inverted polymer solar cells. Our study indicates that both structural and optical properties rather than electrical conductivities of ZnO films play more important role for the effective charge collection in photovoltaic device operation. The ability to tune the materials properties of undoped ZnO films via PEALD should extend their functionality over the wide range of advanced electronic applications.

  6. Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid.

    Science.gov (United States)

    Kim, Yongmin; Provine, J; Walch, Stephen P; Park, Joonsuk; Phuthong, Witchukorn; Dadlani, Anup L; Kim, Hyo-Jin; Schindler, Peter; Kim, Kihyun; Prinz, Fritz B

    2016-07-13

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C.

  7. Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition

    NARCIS (Netherlands)

    Dendooven, Jolien; Solano, Eduardo; Minjauw, Matthias M; Van de Kerckhove, Kevin; Coati, Alessandro; Fonda, Emiliano; Portale, Giuseppe; Garreau, Yves; Detavernier, Christophe

    2016-01-01

    We report the design of a mobile setup for synchrotron based in situ studies during atomic layer processing. The system was designed to facilitate in situ grazing incidence small angle x-ray scattering (GISAXS), x-ray fluorescence (XRF), and x-ray absorption spectroscopy measurements at synchrotron

  8. Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition

    NARCIS (Netherlands)

    Dendooven, Jolien; Solano, Eduardo; Minjauw, Matthias M; Van de Kerckhove, Kevin; Coati, Alessandro; Fonda, Emiliano; Portale, Giuseppe; Garreau, Yves; Detavernier, Christophe

    2016-01-01

    We report the design of a mobile setup for synchrotron based in situ studies during atomic layer processing. The system was designed to facilitate in situ grazing incidence small angle x-ray scattering (GISAXS), x-ray fluorescence (XRF), and x-ray absorption spectroscopy measurements at synchrotron

  9. Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement.

    Science.gov (United States)

    Bugot, Cathy; Schneider, Nathanaëlle; Lincot, Daniel; Donsanti, Frédérique

    2013-01-01

    This paper describes the atomic layer deposition of In2(S,O)3 films by using In(acac)3 (acac = acetylacetonate), H2S and either H2O or O2 plasma as oxygen sources. First, the growth of pure In2S3 films was studied in order to better understand the influence of the oxygen pulses. X-Ray diffraction measurements, optical analysis and energy dispersive X-ray spectroscopy were performed to characterize the samples. When H2O was used as the oxygen source, the films have structural and optical properties, and the atomic composition of pure In2S3. No pure In2O3 films could be grown by using H2O or O2 plasma. However, In2(S,O)3 films could be successfully grown by using O2 plasma as oxygen source at a deposition temperature of T = 160 °C, because of an exchange reaction between S and O atoms. By adjusting the number of In2O3 growth cycles in relation to the number of In2S3 growth cycles, the optical band gap of the resulting thin films could be tuned.

  10. Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

    Directory of Open Access Journals (Sweden)

    Cathy Bugot

    2013-11-01

    Full Text Available This paper describes the atomic layer deposition of In2(S,O3 films by using In(acac3 (acac = acetylacetonate, H2S and either H2O or O2 plasma as oxygen sources. First, the growth of pure In2S3 films was studied in order to better understand the influence of the oxygen pulses. X-Ray diffraction measurements, optical analysis and energy dispersive X-ray spectroscopy were performed to characterize the samples. When H2O was used as the oxygen source, the films have structural and optical properties, and the atomic composition of pure In2S3. No pure In2O3 films could be grown by using H2O or O2 plasma. However, In2(S,O3 films could be successfully grown by using O2 plasma as oxygen source at a deposition temperature of T = 160 °C, because of an exchange reaction between S and O atoms. By adjusting the number of In2O3 growth cycles in relation to the number of In2S3 growth cycles, the optical band gap of the resulting thin films could be tuned.

  11. Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho; Cha, Suk Won, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Iui-dong, Yeongtong-gu, Suwon 443-270 (Korea, Republic of); Hong, Soon Wook; Koo, Bongjun; Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); An, Jihwan [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

    2016-01-15

    Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.

  12. Atomic layer etching of GaN and AlGaN using directional plasma-enhanced approach

    Science.gov (United States)

    Ohba, Tomihito; Yang, Wenbing; Tan, Samantha; Kanarik, Keren J.; Nojiri, Kazuo

    2017-06-01

    The directional atomic layer etching (ALE) of GaN and AlGaN has been developed. The GaN ALE process consists of cyclic Cl2 plasma chemisorption and Ar ion removal. The etch per cycle (EPC) was 0.4 nm within the self-limiting regime, which is 50 to 100 V. The root-mean-square surface roughness R RMS was 0.6 nm, which was improved from an initial roughness of 0.8 nm. For AlGaN ALE, BCl3 was added to the chlorine step to obtain a smooth surface with R RMS of 0.3 nm and stoichiometry similar to the initial sample. The ultra smooth surface obtained by etching is promising for use in next-generation power devices.

  13. Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma

    Science.gov (United States)

    Han, Jeong Hwan; Lee, Byoung Kook; Jung, Eun Ae; Kim, Hyo-Suk; Kim, Seong Jun; Kim, Chang Gyoun; Chung, Taek-Mo; An, Ki-Seok

    2015-12-01

    Amorphous ZnSnOx (ZTO) films were prepared using plasma-enhanced atomic layer deposition (PEALD) in a temperature range of 100-200 °C. Metal-organic precursors of Sn(dmamp)2 (dmamp = bis(1-dimethylamino-2-methyl-2-propoxide) and diethylzinc were employed as sources of Sn and Zn, respectively, in combination with O2 plasma as a reactant. Sn levels in the ZTO films were controlled by varying the SnO2/ZnO cycle ratio from 0 to 8. According to the growth behaviour of the ZTO film by alternating SnO2 and ZnO PEALD cycles, it was observed that ZnO growth on Sn-rich ZTO film is retarded, whereas SnO2 growth is enhanced on Zn-rich ZTO film. The chemical states of the ZTO films were confirmed by X-ray photoelectron spectroscopy (XPS); the chemical compositions of the ZTO films were characterised by XPS depth profiling. Grazing-angle X-ray diffraction revealed that the PEALD ZTO films possess an amorphous structure, irrespective of Sn levels from 20 to 59 at.%. ZTO films with intermediate Sn at.% exhibited smooth surface morphology compared to binary ZnO and SnO2 films. Additionally, the step coverage of a ZTO film deposited on hole pattern with an aspect ratio of 8 and opening diameter of 110 nm was about 93%, suggesting the realisation of self-limited growth.

  14. Work function tuning of plasma-enhanced atomic layer deposited WC{sub x}N{sub y} electrodes for metal/oxide/semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Zonensain, Oren; Fadida, Sivan; Eizenberg, Moshe [Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Fisher, Ilanit; Gao, Juwen; Chattopadhyay, Kaushik; Harm, Greg; Mountsier, Tom; Danek, Michal [Lam Research Corporation, 4000 N. First Street, San Jose, California 95134 (United States)

    2015-02-23

    One of the main challenges facing the integration of metals as gate electrodes in advanced MOS devices is control over the Fermi level position at the metal/dielectric interface. In this study, we demonstrate the ability to tune the effective work function (EWF) of W-based electrodes by process modifications of the atomic layer deposited (ALD) films. Tungsten carbo-nitrides (WC{sub x}N{sub y}) films were deposited via plasma-enhanced and/or thermal ALD processes using organometallic precursors. The process modifications enabled us to control the stoichiometry of the WC{sub x}N{sub y} films. Deposition in hydrogen plasma (without nitrogen based reactant) resulted in a stoichiometry of WC{sub 0.4} with primarily W-C chemical bonding, as determined by x-ray photoelectron spectroscopy. These films yielded a relatively low EWF of 4.2 ± 0.1 eV. The introduction of nitrogen based reactant to the plasma or the thermal ALD deposition resulted in a stoichiometry of WC{sub 0.1}N{sub 0.6–0.8} with predominantly W-N chemical bonding. These films produced a high EWF of 4.7 ± 0.1 eV.

  15. Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes

    Science.gov (United States)

    Chen, Zheng; Wang, Haoran; Wang, Xiao; Chen, Ping; Liu, Yunfei; Zhao, Hongyu; Zhao, Yi; Duan, Yu

    2017-01-01

    Encapsulation is essential to protect the air-sensitive components of organic light-emitting diodes (OLEDs) such as active layers and cathode electrodes. In this study, hybrid zirconium inorganic/organic nanolaminates were fabricated using remote plasma enhanced atomic layer deposition (PEALD) and molecular layer deposition at a low temperature. The nanolaminate serves as a thin-film encapsulation layer for OLEDs. The reaction mechanism of PEALD process was investigated using an in-situ quartz crystal microbalance (QCM) and in-situ quadrupole mass spectrometer (QMS). The bonds present in the films were determined by Fourier transform infrared spectroscopy. The primary reaction byproducts in PEALD, such as CO, CO2, NO, H2O, as well as the related fragments during the O2 plasma process were characterized using the QMS, indicating a combustion-like reaction process. The self-limiting nature and growth mechanisms of the ZrO2 during the complex surface chemical reaction of the ligand and O2 plasma were monitored using the QCM. The remote PEALD ZrO2/zircone nanolaminate structure prolonged the transmission path of water vapor and smooth surface morphology. Consequently, the water barrier properties were significantly improved (reaching 3.078 × 10‑5 g/m2/day). This study also shows that flexible OLEDs can be successfully encapsulated to achieve a significantly longer lifetime.

  16. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF{sub 6} based plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto (Finland); Department of Physics, University of Jyvaeskylae, P.O. Box 35, 40014, Jyvaeskylae,Finland (Finland); Department of Micro and Nanosciences, School of Electrical Engineering, Aalto University, P.O. Box 13500, FI-00076, Aalto (Finland)

    2012-01-15

    The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 deg. C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF{sub 6} and O{sub 2} under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film's removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF{sub x}{sup +} and O{sup +} chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF{sub 6} based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

  17. AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I.-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

    2017-04-01

    We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H2/NH3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias ( V DSQ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage ( V th), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

  18. Effect of hydrogen peroxide pretreatment on ZnO-based metal–semiconductor–metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yu-Chang; Lee, Hsin-Ying, E-mail: hylee@ee.ncku.edu.tw [Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China); Lee, Tsung-Hsin [Metal Industries Research and Development Centre, Kaohsiung 82151, Taiwan (China)

    2016-01-15

    In this study, zinc oxide (ZnO) films were deposited on sapphire substrates using a plasma-enhanced atomic layer deposition system. Prior to deposition, the substrates were treated with hydrogen peroxide (H{sub 2}O{sub 2}) in order to increase nucleation on the initial sapphire surface and, thus, enhance the quality of deposited ZnO films. Furthermore, x-ray diffraction spectroscopy measurements indicated that the crystallinity of ZnO films was considerably enhanced by H{sub 2}O{sub 2} pretreatment, with the strongest (002) diffraction peak occurring for the film pretreated with H{sub 2}O{sub 2} for 60 min. X-ray photoelectron spectroscopy also was used, and the results indicated that a high number of Zn–O bonds was generated in ZnO films pretreated appropriately with H{sub 2}O{sub 2}. The ZnO film deposited on a sapphire substrate with H{sub 2}O{sub 2} pretreatment for 60 min was applied to metal–semiconductor–metal ultraviolet photodetectors (MSM-UPDs) as an active layer. The fabricated ZnO MSM-UPDs showed improvements in dark current and ultraviolet–visible rejection ratios (0.27 μA and 1.06 × 10{sup 3}, respectively) compared to traditional devices.

  19. Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Bo-Heng [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China); Huang, Hung Ji, E-mail: hjhuang@itrc.narl.org.tw [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China); Huang, Sheng-Hsin [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Hsiao, Chien-Nan [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China)

    2014-09-01

    The inductively coupled plasma-enhanced atomic layer deposition (PEALD) method was used to fabricate ultrathin and smooth Pt thin films at low temperatures without the use of a Pt seed layer. The Pt thin metal films deposited at 200 °C onto Si and glass substrates exhibited high conductivities (< 12 μΩ cm for films with a thickness greater than 8 nm) and thermal stabilities resembling those of the bulk material. The measured density of the deposited Pt thin films was 20.7 ± 6 g/cm{sup 3}. X-ray photoelectron spectra of the films showed clear 4f peaks (74.3 eV (4f{sub 5/2}) and 71.1 eV (4f{sub 7/2})), and X-ray diffraction measurements showed the (111) peak of the fcc structure. The deposited Pt layers were in crystal form. The 25.5-nm Pt films coated onto 170-nm-wide trench structures (aspect ratio of 3.5:1) exhibited good step coverage. The PEALD-deposited Pt thin films were chemically stable under high-temperature light illumination and could serve as catalysts under strongly alkaline conditions (pH = 12) during the long-term oxidization of ammonium ions. - Highlights: • Inductively coupled plasma applied to enhance atomic layer deposition (PEALD) • Smooth Pt films fabricated by PEALD at low temperature • 8-nm Pt shows clear metal peaks in XPS and XRD. • 8-nm Pt shows low electrical resistivity of 16 μΩ cm. • 8-nm Pt shows stability under strong light and pH = 12 wash by NH{sub 4}{sup +}/NaOH solution.

  20. Atomic Layer Deposition TiO2 Films and TiO2/SiNx Stacks Applied for Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Zu-Po Yang

    2016-08-01

    Full Text Available Titanium oxide (TiO2 films and TiO2/SiNx stacks have potential in surface passivation, anti-reflection coatings and carrier-selective contact layers for crystalline Si solar cells. A Si wafer, deposited with 8-nm-thick TiO2 film by atomic layer deposition, has a surface recombination velocity as low as 14.93 cm/s at the injection level of 1.0 × 1015 cm−3. However, the performance of silicon surface passivation of the deposited TiO2 film declines as its thickness increases, probably because of the stress effects, phase transformation, atomic hydrogen and thermal stability of amorphous TiO2 films. For the characterization of 66-nm-thick TiO2 film, the results of transmission electron microscopy show that the anatase TiO2 crystallinity forms close to the surface of the Si. Secondary ion mass spectrometry shows the atomic hydrogen at the interface of TiO2 and Si which serves for chemical passivation. The crystal size of anatase TiO2 and the homogeneity of TiO2 film can be deduced by the measurements of Raman spectroscopy and spectroscopic ellipsometry, respectively. For the passivating contacts of solar cells, in addition, a stack composed of 8-nm-thick TiO2 film and a plasma-enhanced chemical-vapor-deposited 72-nm-thick SiNx layer has been investigated. From the results of the measurement of the reflectivity and effective carrier lifetime, TiO2/SiNx stacks on Si wafers perform with low reflectivity and some degree of surface passivation for the Si wafer.

  1. Experimental demonstration of single electron transistors featuring SiO{sub 2} plasma-enhanced atomic layer deposition in Ni-SiO{sub 2}-Ni tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Karbasian, Golnaz, E-mail: Golnaz.Karbasian.1@nd.edu; McConnell, Michael S.; Orlov, Alexei O.; Rouvimov, Sergei; Snider, Gregory L. [Electrical Engineering Department, University of Notre Dame, Indiana 46556 (United States)

    2016-01-15

    The authors report the use of plasma-enhanced atomic layer deposition (PEALD) to fabricate single-electron transistors (SETs) featuring ultrathin (≈1 nm) tunnel-transparent SiO{sub 2} in Ni-SiO{sub 2}-Ni tunnel junctions. They show that, as a result of the O{sub 2} plasma steps in PEALD of SiO{sub 2}, the top surface of the underlying Ni electrode is oxidized. Additionally, the bottom surface of the upper Ni layer is also oxidized where it is in contact with the deposited SiO{sub 2}, most likely as a result of oxygen-containing species on the surface of the SiO{sub 2}. Due to the presence of these surface parasitic layers of NiO, which exhibit features typical of thermally activated transport, the resistance of Ni-SiO{sub 2}-Ni tunnel junctions is drastically increased. Moreover, the transport mechanism is changed from quantum tunneling through the dielectric barrier to one consistent with thermally activated resistors in series with tunnel junctions. The reduction of NiO to Ni is therefore required to restore the metal-insulator-metal (MIM) structure of the junctions. Rapid thermal annealing in a forming gas ambient at elevated temperatures is presented as a technique to reduce both parasitic oxide layers. This method is of great interest for devices that rely on MIM tunnel junctions with ultrathin barriers. Using this technique, the authors successfully fabricated MIM SETs with minimal trace of parasitic NiO component. They demonstrate that the properties of the tunnel barrier in nanoscale tunnel junctions (with <10{sup −15} m{sup 2} in area) can be evaluated by electrical characterization of SETs.

  2. Ultraviolet photodetector based on Mg{sub x}Zn{sub 1-x}O films using plasma-enhanced atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yu-Chang; Lee, Hsin-Ying, E-mail: hylee@ee.ncku.edu.tw [Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China); Lee, Ching-Ting [Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China)

    2016-01-15

    A plasma-enhanced atomic layer deposition (PE-ALD) system was used to deposit magnesium zinc oxide (Mg{sub x}Zn{sub 1−x}O) films with various Mg content (x). The Mg{sub x}Zn{sub 1-x}O films were applied to metal–semiconductor–metal ultraviolet (UV) photodetectors (MSM-UPDs) as an active layer. The Mg content in the Mg{sub x}Zn{sub 1-x}O films was modulated by adjusting the ZnO–MgO cycle ratios to 15:1, 12:1, and 9:1. Correspondingly, the Mg content in the Mg{sub x}Zn{sub 1-x}O films characterized using an energy dispersive spectrometer was 0.10, 0.13, and 0.16, respectively. The optical bandgap of the Mg{sub x}Zn{sub 1-x}O films increased from 3.56 to 3.66 eV with an increase in Mg content from 0.10 to 0.16. The peak position of photoresponsivity for the Mg{sub x}Zn{sub 1-x}O MSM-UPDs was also shifted from 350 to 340 nm. The UV-visible rejection ratios of the Mg{sub x}Zn{sub 1-x}O MSM-UPDs were higher than 3 orders of magnitude. In addition, excellent detectivity and noise equivalent power for the Mg{sub x}Zn{sub 1-x}O MSM-UPDs were observed at a bias voltage of 5 V. The high performance of the Mg{sub x}Zn{sub 1-x}O MSM-UPDs was achieved by PE-ALD at a low temperature.

  3. Principle and Applications of Plasma Enhanced Atomic Layer Deposition%等离子体增强原子层沉积原理与应用

    Institute of Scientific and Technical Information of China (English)

    曹燕强; 李爱东

    2012-01-01

    等离子体增强原子层沉积(PEALD)是一种低温制备高质量超薄薄膜的有效手段,近年来正受到工业界和学术界广泛的关注.简要介绍了PEALD的发展历史和生长原理.描述了PEALD常见的三种设备构造:自由基增强原子层沉积、直接等离子体沉积和远程等离子体沉积,比较了它们的优缺点.着重评述了PEALD的特点,主要具有沉积温度低、前驱体和生长材料种类广、工艺控制灵活、薄膜性能优异等优势,但也面临着薄膜三维贴合性下降和等离子体损伤等挑战.列举了PEALD的一些重要应用,如在金属薄膜制备、铜互连阻挡层、高介电常数材料、薄膜封裹等领域的应用.最后展望了PEALD的发展前景.%Plasma enhanced atomic layer deposition (PEALD) is an efficient method for the preparation of high-quality ultra-thin films at low temperature, and has drawn great attention from industry and research fields in recent years. The development history and principle of the PEALD are introduced briefly. Three equipment configurations are described, including the radical-enhanced ALD, direct plasma ALD and remote plasma ALD, and their advantages and disadvantages are compared. The characteristics of PEALD are mainly reviewed, such as low deposition temperature, more choices of precursors and materials, flexible processing conditions and good film properties. However, it also faces some challenges from reduced film conformality and plasma damage. Several important applications of PEALD are reviewed, including the metal film deposition, Cu interconnection barrier layer, high dielectric constant materials, and encapsulation. Finally, the development prospects of PEALD are presented.

  4. Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

    Science.gov (United States)

    Yang, Jialing; Eller, Brianna S.; Nemanich, Robert J.

    2014-09-01

    The effects of surface pretreatment, dielectric growth, and post deposition annealing on interface electronic structure and polarization charge compensation of Ga- and N-face bulk GaN were investigated. The cleaning process consisted of an ex-situ wet chemical NH4OH treatment and an in-situ elevated temperature NH3 plasma process to remove carbon contamination, reduce oxygen coverage, and potentially passivate N-vacancy related defects. After the cleaning process, carbon contamination decreased below the x-ray photoemission spectroscopy detection limit, and the oxygen coverage stabilized at ˜1 monolayer on both Ga- and N-face GaN. In addition, Ga- and N-face GaN had an upward band bending of 0.8 ± 0.1 eV and 0.6 ± 0.1 eV, respectively, which suggested the net charge of the surface states and polarization bound charge was similar on Ga- and N-face GaN. Furthermore, three dielectrics (HfO2, Al2O3, and SiO2) were prepared by plasma-enhanced atomic layer deposition on Ga- or N-face GaN and annealed in N2 ambient to investigate the effect of the polarization charge on the interface electronic structure and band offsets. The respective valence band offsets of HfO2, Al2O3, and SiO2 with respect to Ga- and N-face GaN were 1.4 ± 0.1, 2.0 ± 0.1, and 3.2 ± 0.1 eV, regardless of dielectric thickness. The corresponding conduction band offsets were 1.0 ± 0.1, 1.3 ± 0.1, and 2.3 ± 0.1 eV, respectively. Experimental band offset results were consistent with theoretical calculations based on the charge neutrality level model. The trend of band offsets for dielectric/GaN interfaces was related to the band gap and/or the electronic part of the dielectric constant. The effect of polarization charge on band offset was apparently screened by the dielectric-GaN interface states.

  5. Atom-probe investigations of TiAl alloys

    Energy Technology Data Exchange (ETDEWEB)

    Menand, A.; Zapolsky-Tatarenko, H.; Nerac-Partaix, A. [Rouen Univ., Mont-Saint-Aignan (France). Fac. des Sci.

    1998-07-15

    Atom probe field ion microscopy (APFIM) and tomographic atom probe (TAP) have been used to study TiAl-based alloys. The element concentrations, the influence of additional elements such as Cr or Nb as well as the solubility of oxygen in {alpha}{sub 2} (Ti{sub 3}Al) and {gamma} (TiAl) phases in compounds with nominal concentration Ti{sub 54}Al{sub 46} and Ti{sub 58}Al{sub 42} have been determined. By using the detection of oxygen atoms as a very local probe, the present investigation revealed the existence of some intermediate phases during the phase transformation {alpha}{yields}{gamma}. The presence of the oxygen atoms during this transformation gives some peculiarities on the transformation path. The appearance of some metastable phases may be explained by the existence of the homologous series Ti{sub 2n-1}Al{sub n} where n is an integer varying from 1 (stoichiometry TiAl) to {infinity} (phase {alpha}{sub 3} Ti{sub 2}Al). (orig.) 35 refs.

  6. Impacts of light illumination on monocrystalline silicon surfaces passivated by atomic layer deposited Al2O3 capped with plasma-enhanced chemical vapor deposited SiN x

    Science.gov (United States)

    Lin, Fen; Toh, Mei Gi; Thway, Maung; Li, Xinhang; Nandakumar, Naomi; Gay, Xavier; Dielissen, Bas; Raj, Samuel; Aberle, Armin G.

    2017-08-01

    In this work, we investigate the impact of light illumination on crystalline silicon surfaces passivated with inline atomic layer deposited aluminum oxide capped with plasma-enhanced chemical vapor deposited silicon nitride. It is found that, for dedicated n-type lifetime samples under illumination, there is no light induced degradation (LID) but enhanced passivation. The lifetime increase happened with a much faster speed compared to the lifetime decay during dark storage, resulting in the overall lifetime enhancement for actual field application scenarios (sunshine during the day and darkness during the night). In addition, it was found that the lifetime enhancement is spectrally dependent and mainly associated with the visible part of the solar spectrum. Hence, it has negligible impact for such interfaces applied on the rear of the solar cells, for example p-type aluminum local back surface field (Al-LBSF) cells.

  7. Efficient plasma-enhanced method for layered LiNi1/3Co1/3Mn1/3O2 cathodes with sulfur atom-scale modification for superior-performance Li-ion batteries.

    Science.gov (United States)

    Jiang, Qianqian; Chen, Ning; Liu, Dongdong; Wang, Shuangyin; Zhang, Han

    2016-06-01

    In order to improve the electrochemical performance of LiNi1/3Co1/3Mn1/3O2 as a lithium insertion positive electrode material, atom-scale modification was realized to obtain the layered oxysulfide LiNi1/3Co1/3Mn1/3O2-xSx using a novel plasma-enhanced doping strategy. The structure and electrochemical performance of LiNi1/3Co1/3Mn1/3O2-xSx are investigated systematically, which confirms that the S doping can make the structure stable and benefit the electrochemical performance. The phys-chemical characterizations indicate that oxygen atoms in the initial LiNi1/3Co1/3Mn1/3O2 have been partially replaced by S atoms. It should be pointed out that the atom-scale modification does not significantly alter the intrinsic structure of the cathode. Compared to the pristine material, the LiNi1/3Co1/3Mn1/3O2-xSx shows a superior performance with a higher capacity (200.4 mA h g(-1)) and a significantly improved cycling stability (maintaining 94.46% of its initial discharge capacity after 100 cycles). Moreover, it has an excellent rate performance especially at elevated performance, which is probably due to the faster Li(+) transportation after S doping into the layered structure. All the results show that the atom-scale modification with sulfur atoms on LiNi1/3Co1/3Mn1/3O2, which significantly improved the electrochemical performance, offers a novel anionic doping strategy to realize the atom-scale modification of electrode materials to improve their electrochemical performance.

  8. Atomic layer deposition of TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Tallarida, Massimo; Dessmann, Nils; Staedter, Matthias; Friedrich, Daniel; Michling, Marcel; Schmeisser, Dieter [BTU-Cottbus, Konrad-Wachsmann-Allee 17, 03046 Cottbus (Germany)

    2011-07-01

    We present a study of the initial growth of TiO{sub 2} on Si(111) by atomic layer deposition (ALD). The Si substrate was etched with NH{sub 4}F before ALD to remove the native oxide film and to produce a Si-H termination. In-situ experiments by means of photoemission and X-ray absorption spectroscopy were conducted with synchrotron radiation on Ti-oxide films produced using Ti-tetra-iso-propoxide (TTIP) and water as precursors. O 1s, Ti 2p, C 1s, and S i2p core level, and O 1s and Ti 2p absorption edges show the transition of the Ti-oxide properties during the first layers. The growth starts with a very small growth rate (0.03 nm/cycle) due to the growth inhibition of the Si-H termination and proceeds with higher growth rate (0.1 nm/cycle) after 1.5 nm Ti-oxide has been deposited.

  9. Laser-assisted atom probe tomography of Ti/TiN films deposited on Si.

    Science.gov (United States)

    Sanford, N A; Blanchard, P T; White, R; Vissers, M R; Diercks, D R; Davydov, A V; Pappas, D P

    2017-03-01

    Laser-assisted atom probe tomography (L-APT) was used to examine superconducting TiN/Ti/TiN trilayer films with nominal respective thicknesses of 5/5/5 (nm). Such materials are of interest for applications that require large arrays of microwave kinetic inductance detectors. The trilayers were deposited on Si substrates by reactive sputtering. Electron energy loss microscopy performed in a scanning transmission electron microscope (STEM/EELS) was used to corroborate the L-APT results and establish the overall thicknesses of the trilayers. Three separate batches were studied where the first (bottom) TiN layer was deposited at 500°C (for all batches) and the subsequent TiN/Ti bilayer was deposited at ambient temperature, 250°C, and 500°C, respectively. L-APT rendered an approximately planar TiN/Si interface by making use of plausible mass-spectral assignments to N3(1+), SiN(1+), and SiO(1+). This was necessary since ambiguities associated with the likely simultaneous occurrence of Si(1+) and N2(1+) prevented their use in rendering the TiN/Si interface upon reconstruction. The non-superconducting Ti2N phase was also revealed by L-APT. Neither L-APT nor STEM/EELS rendered sharp Ti/TiN interfaces and the contrast between these layers diminished with increased film deposition temperature. L-APT also revealed that hydrogen was present in varying degrees in all samples including control samples that were composed of single layers of Ti or TiN.

  10. Silicon protected with atomic layer deposited TiO2

    DEFF Research Database (Denmark)

    Seger, Brian; Tilley, S. David; Pedersen, Thomas

    2013-01-01

    The present work demonstrates that tuning the donor density of protective TiO2 layers on a photocathode has dramatic consequences for electronic conduction through TiO2 with implications for the stabilization of oxidation-sensitive catalysts on the surface. Vacuum annealing at 400 °C for 1 hour...... of atomic layer deposited TiO2 increased the donor density from an as-deposited value of 1.3 × 1019 cm -3 to 2.2 × 1020 cm-3 following the annealing step. Using an Fe(ii)/Fe(iii) redox couple it was shown that the lower dopant density only allows electron transfer through TiO2 under conditions of weak band...... bending. However it was shown that increasing the dopant density to 2.2 × 1020 cm-3 allows tunneling through the surface region of TiO2 to occur at significant band bending. An important implication of this result is that the less doped material is unsuitable for electron transfer across the TiO2...

  11. Molecular dynamics study of the interactions of incident N or Ti atoms with the TiN(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhenhai [National Key Laboratory for Precision Hot Processing of Metals & School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Centre for Precision Manufacturing, Department of Design, Manufacture and Engineering Management, The University of Strathclyde, Glasgow G1 1XJ (United Kingdom); Zeng, Quanren [Centre for Precision Manufacturing, Department of Design, Manufacture and Engineering Management, The University of Strathclyde, Glasgow G1 1XJ (United Kingdom); Yuan, Lin [National Key Laboratory for Precision Hot Processing of Metals & School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Qin, Yi [Centre for Precision Manufacturing, Department of Design, Manufacture and Engineering Management, The University of Strathclyde, Glasgow G1 1XJ (United Kingdom); Chen, Mingjun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Shan, Debin, E-mail: d.b.shan@gmail.com [National Key Laboratory for Precision Hot Processing of Metals & School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2016-01-01

    Graphical abstract: - Highlights: • Interactions of incident N or Ti atoms with TiN(001) surface are studied by CMD. • The impact position of incident N on the surface determines the interaction modes. • Adsorption could occur due to the atomic exchange process. • Resputtering and reflection may simultaneously occur. • The initial sticking coefficient of N on TiN(001) is much smaller than that of Ti. - Abstract: The interaction processes between incident N or Ti atoms and the TiN(001) surface are simulated by classical molecular dynamics based on the second nearest-neighbor modified embedded-atom method potentials. The simulations are carried out for substrate temperatures between 300 and 700 K and kinetic energies of the incident atoms within the range of 0.5–10 eV. When N atoms impact against the surface, adsorption, resputtering and reflection of particles are observed; several unique atomic mechanisms are identified to account for these interactions, in which the adsorption could occur due to the atomic exchange process while the resputtering and reflection may simultaneously occur. The impact position of incident N atoms on the surface plays an important role in determining the interaction modes. Their occurrence probabilities are dependent on the kinetic energy of incident N atoms but independent on the substrate temperature. When Ti atoms are the incident particles, adsorption is the predominant interaction mode between particles and the surface. This results in the much smaller initial sticking coefficient of N atoms on the TiN(001) surface compared with that of Ti atoms. Stoichiometric TiN is promoted by N/Ti flux ratios larger than one.

  12. Capacitance and conductance versus voltage characterization of Al{sub 2}O{sub 3} layers prepared by plasma enhanced atomic layer deposition at 25 °C≤ T ≤ 200 °C

    Energy Technology Data Exchange (ETDEWEB)

    Henkel, Karsten, E-mail: henkel@tu-cottbus.de; Tallarida, Massimo; Schmeißer, Dieter [Applied Physics and Sensors, Brandenburg University of Technology Cottbus-Senftenberg, K.-Wachsmann-Allee 17, D-03046 Cottbus (Germany); Gargouri, Hassan; Gruska, Bernd; Arens, Michael [Sentech Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

    2014-01-15

    In this work, plasma enhanced atomic layer deposited (PE-ALD) samples were prepared at substrate temperatures in the range between room temperature (RT) and 200 °C and investigated by capacitance–voltage and conductance–voltage recordings. The measurements are compared to standard thermal atomic layer deposition (T-ALD) at 200 °C. Very low interface state density (D{sub it}) ∼10{sup 11} eV{sup −1} cm{sup −2} could be achieved for the PE-ALD process at 200 °C substrate temperature after postdeposition anneal (PDA) in forming gas at 450 °C. The PDA works very effectively for both the PE-ALD and T-ALD at 200 °C substrate temperature delivering also similar values of negative fixed charge density (N{sub fix}) around −2.5 × 10{sup 12} cm{sup −2}. At the substrate temperature of 150 °C, highest N{sub fix} (−2.9 × 10{sup 12} cm{sup −2}) and moderate D{sub it} (2.7 × 10{sup 11} eV{sup −1} cm{sup −2}) values were observed. The as deposited PE-ALD layer at RT shows both low D{sub it} in the range of (1 to 3) × 10{sup 11} eV{sup −1} cm{sup −2} and low N{sub fix} (−4.4 × 10{sup 11} cm{sup −2}) at the same time. The dependencies of N{sub fix}, D{sub it}, and relative permittivity on the substrate temperatures and its adjustability are discussed.

  13. Fabrication of Duplex Coated U-Mo-Ti Atomized Powder

    Energy Technology Data Exchange (ETDEWEB)

    Nam, Ji Min; Kim, Woo Jeong; Lee, Kyu Hong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Ryu, Ho Jin [Korea Advanced Institue of Science and Technology, Daejeon (Korea, Republic of)

    2013-10-15

    The results of an annealing test showed that the coating layers inhibit the formation of interaction layers. The results of duplex coating showed that nitride coating layers inhibit the formation of other coating layers. High-density U-Mo alloys are regarded as promising candidates for advanced research reactor fuel as they have shown stable irradiation performance when compared to other uranium alloys and compounds. However, interaction layer formation between the U-Mo alloys and Al matrix degrades the irradiation performance of U-Mo dispersion fuel. Therefore, the addition of Ti in U-Mo alloys, the addition of Si in a Al matrix, and silicide or nitride coating on the surface of U-Mo particles have been proposed to inhibit the interaction layer growth. In this study, U-Mo-Ti alloy powder was produced using a centrifugal atomization method. In addition, nitride and silicide duplex coating layers were fabricated on the surface of the U-Mo-Ti particles. The coated powders were characterized by using X-ray diffraction, SEM, and EDX. Silicide and nitride single coating layers were fabricated on the surface of U-7wt%Mo-1wt%Ti alloys with a thickness of about 10.20 micrometers.

  14. Distribution of Nb atom in the TiAl+Nb system

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Based on MEAM (the modified embedded atom method) potential and an average atom model similar to B-W (Bragg-Williams) method, the distribution of Nb atoms in TiAl+Nb compounds with various composition was calculated. The calculation results showed that Nb atoms prefer to occupy the Ti sublattice of L10 structure for all compounds in question. With increasing atomic fraction of Nb and Al, Nb atoms exhibited a trend of ordered distribution on the Ti sublattice and result in a new L10 derivative superlattice structure.

  15. Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application.

    Science.gov (United States)

    Kim, Hyo Yeon; Jung, Eun Ae; Mun, Geumbi; Agbenyeke, Raphael E; Park, Bo Keun; Park, Jin-Seong; Son, Seung Uk; Jeon, Dong Ju; Park, Sang-Hee Ko; Chung, Taek-Mo; Han, Jeong Hwan

    2016-10-12

    Low-temperature growth of In2O3 films was demonstrated at 70-250 °C by plasma-enhanced atomic layer deposition (PEALD) using a newly synthesized liquid indium precursor, dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium (Me2In(EDPA)), and O2 plasma for application to high-mobility thin film transistors. Self-limiting In2O3 PEALD growth was observed with a saturated growth rate of approximately 0.053 nm/cycle in an ALD temperature window of 90-180 °C. As-deposited In2O3 films showed negligible residual impurity, film densities as high as 6.64-7.16 g/cm(3), smooth surface morphology with a root-mean-square (RMS) roughness of approximately 0.2 nm, and semiconducting level carrier concentrations of 10(17)-10(18) cm(-3). Ultrathin In2O3 channel-based thin film transistors (TFTs) were fabricated in a coplanar bottom gate structure, and their electrical performances were evaluated. Because of the excellent quality of In2O3 films, superior electronic switching performances were achieved with high field effect mobilities of 28-30 and 16-19 cm(2)/V·s in the linear and saturation regimes, respectively. Furthermore, the fabricated TFTs showed excellent gate control characteristics in terms of subthreshold swing, hysteresis, and on/off current ratio. The low-temperature PEALD process for high-quality In2O3 films using the developed novel In precursor can be widely used in a variety of applications such as microelectronics, displays, energy devices, and sensors, especially at temperatures compatible with organic substrates.

  16. Stable atomic structure of NiTi austenite

    Energy Technology Data Exchange (ETDEWEB)

    Zarkevich, Nikolai A [Ames Laboratory; Johnson, Duane D [Ames Laboratory

    2014-08-01

    Nitinol (NiTi), the most widely used shape-memory alloy, exhibits an austenite phase that has yet to be identified. The usually assumed austenitic structure is cubic B2, which has imaginary phonon modes, hence it is unstable. We suggest a stable austenitic structure that “on average” has B2 symmetry (observed by x-ray and neutron diffraction), but it exhibits finite atomic displacements from the ideal B2 sites. The proposed structure has a phonon spectrum that agrees with that from neutron scattering, has diffraction spectra in agreement with x-ray diffraction, and has an energy relative to the ground state that agrees with calorimetry data.

  17. MEAM Simulation of Distribution of Nb Atoms in TiAl+Nb System

    Institute of Scientific and Technical Information of China (English)

    Xiaodong NI; Guoliang CHEN; Xitao WANG; Xudong HUI

    2001-01-01

    An accurate MEAM (modified embedded atom method) potential including angular dependence for TiAl compound has been developed. The properties of TiAl compound can be reproduced well. With this potential, the distribution of Nb atoms in L10 type TiAl compound with various composition are calculated by using an average-atom model similar to B-W (Bragg-Williams)method. The results of calculation showed that Nb atoms prefer to occupy the Ti sublattice of L10 structure, and with increasing atomic percent of Nb and Al, Nb atoms exhibited a trend of ordered distribution in Ti sublattice, and result in the formation of L10 derivative superlattice structure.

  18. Facile embedding of single vanadium atoms at the anatase TiO2(101) surface.

    Science.gov (United States)

    Koust, Stig; Arnarson, Logi; Moses, Poul G; Li, Zheshen; Beinik, Igor; Lauritsen, Jeppe V; Wendt, Stefan

    2017-04-05

    To understand the structure-reactivity relationships for mixed-metal oxide catalysts, well-defined systems are required. Mixtures of vanadia and titania (TiO2) are of particular interest for application in heterogeneous catalysis, with TiO2 often acting as the support. By utilizing high-resolution scanning tunneling microscopy, we studied the interaction of vanadium (V) with the anatase TiO2(101) surface in the sub-monolayer regime. At 80 K, metallic V nucleates into homogeneously distributed clusters onto the terraces with no preference for nucleation at the step edges. However, embedding of single V atoms into TiO2 occurs following annealing at room temperature. In conjunction with X-ray photoelectron spectroscopy data and density functional theory calculations, we propose that monomeric V atoms occupy positions of regular surface Ti sites, i.e., Ti atoms are substituted by V atoms.

  19. Atomic-scale investigation of a new phase transformation process in TiO2 nanofibers.

    Science.gov (United States)

    Lei, Yimin; Li, Jian; Wang, Zhan; Sun, Jun; Chen, Fuyi; Liu, Hongwei; Ma, Xiaohua; Liu, Zongwen

    2017-03-30

    Crystallography of phase transformation combining transmission electron microscopy (TEM) with in situ heating techniques and X-ray diffraction (XRD) can provide critical information regarding solid-state phase transitions and the transition-induced interfaces in TiO2 nanomaterials theoretically and experimentally. Two types of reduced titanium oxides (Ti3O5, Ti6O11) are found during ex situ and in situ heating of TiO2 (B) nanofibers with a specific morphology of the {100} single form (SF) in air and vacuum. The results indicate that the phase transformation process from TiO2 (B) follows the TiO2 (B) → Ti3O5 → Ti6O11 → anatase sequence for the nanofibers with the {100} SF. The occurrence of such a phase transition is selective to the morphology of TiO2 (B) nanofibers. The corresponding orientation relationships (COR) between the four phases are revealed according to the TEM characterization. Four types of coherent interfaces, following the CORs are also found. They are TiO2 (B)/Ti3O5, TiO2 (B)/Ti6O11, Ti6O11/anatase and TiO2 (B)/anatase respectively. The habit plane for the TiO2 (B) to Ti3O5 transition is calculated as the {100}TB by using the invariant line model. The detailed atomic transformation mechanism is elucidated based on the crystallographic features of the four phases.

  20. Atomic layer deposition of TiO2 and Al2O3 on nanographite films: structure and field emission properties

    Science.gov (United States)

    Kleshch, Victor I.; Ismagilov, Rinat R.; Smolnikova, Elena A.; Obraztsova, Ekaterina A.; Tuyakova, Feruza; Obraztsov, Alexander N.

    2016-03-01

    Atomic layer deposition (ALD) of metal oxides (MO) was used to modify the properties of nanographite (NG) films produced by direct current plasma-enhanced chemical vapor deposition technique. NG films consist of a few layers of graphene flakes (nanowalls) and nanoscrolls homogeneously distributed over a silicon substrate with a predominantly vertical orientation of graphene sheets to the substrate surface. TiO2 and Al2O3 layers, with thicknesses in the range of 50 to 250 nm, were deposited on NG films by ALD. The obtained NG-MO composite materials were characterized by scanning electron microscopy, energy dispersive x-ray analysis, and Raman spectroscopy. It was found that ALD forms a uniform coating on graphene flakes, while on the surface of needle-like nanoscrolls it forms spherical nanoparticles. Field emission properties of the films were measured in a flat vacuum diode configuration. Analysis based on obtained current-voltage characteristics and electrostatic calculations show that emission from NG-TiO2 films is determined by the nanoscrolls protruding from the TiO2 coverage. The TiO2 layers with thicknesses of <200 nm almost do not affect the overall field emission characteristics of the films. At the same time, these layers are able to stabilize the NG films' surface and can lead to an improvement of the NG cold cathode performance in vacuum electronics.

  1. Direct observation of interfacial Au atoms on TiO₂ in three dimensions.

    Science.gov (United States)

    Gao, Wenpei; Sivaramakrishnan, Shankar; Wen, Jianguo; Zuo, Jian-Min

    2015-04-08

    Interfacial atoms, which result from interactions between the metal nanoparticles and support, have a large impact on the physical and chemical properties of nanoparticles. However, they are difficult to observe; the lack of knowledge has been a major obstacle toward unraveling their role in chemical transformations. Here we report conclusive evidence of interfacial Au atoms formed on the rutile (TiO2) (110) surfaces by activation using high-temperature (∼500 °C) annealing in air. Three-dimensional imaging was performed using depth-sectioning enabled by aberration-corrected scanning transmission electron microscopy. Results show that the interface between Au nanocrystals and TiO2 (110) surfaces consists of a single atomic layer with Au atoms embedded inside Ti-O. The number of interfacial Au atoms is estimated from ∼1-8 in an interfacial atomic column. Direct impact of interfacial Au atoms is observed on an enhanced Au-TiO2 interaction and the reduction of surface TiO2; both are critical to Au catalysis.

  2. sup 4 sup 4 Ti atom counting for nuclear astrophysics

    CERN Document Server

    Hui, S K; Berkovits, D; Boaretto, E; Ghelberg, S; Hass, M; Hershkowitz, A; Navon, E

    2000-01-01

    The nuclide sup 4 sup 4 Ti (T sub 1 sub / sub 2 =59.2 yr) has recently become an important asset to nuclear astrophysics through the measurement of its cosmic radioactivity, yielding significant information on fresh sup 4 sup 4 Ti nucleosynthesis in supernovae. We propose to use AMS to determine the production rate of sup 4 sup 4 Ti by the main channel believed to be responsible for sup 4 sup 4 Ti astrophysical production, namely sup 4 sup 0 Ca(alpha,gamma). A preliminary experiment conducted at the Koffler 14UD Pelletron accelerator demonstrates a sensitivity of 1x10 sup - sup 1 sup 4 for the sup 4 sup 4 Ti/Ti ratio. The AMS detection was performed using sup 4 sup 4 Ti sup - ions sputtered from a TiO sub 2 sample, reducing considerably the sup 4 sup 4 Ca isobaric interference. The present limit corresponds effectively to sup 4 sup 4 Ti production with resonance strength in the range 10-100 meV for a one-day sup 4 sup 0 Ca(alpha,gamma) activation. Several such resonances are known to be responsible for sup 4 ...

  3. Optimization of atomically smooth and metallic surface of SrTiO3

    Science.gov (United States)

    Kwak, In Hae; Varnoosfaderani, Sima saeidi; Barquist, Colin S.; Paykar, Ashkan; Shakya, Ambika; Lee, Yoonseok; Hebard, Arthur F.; Biswas, Amlan

    2017-04-01

    We obtained metallic SrTiO3 with an atomically smooth surface, where the step height is close to the unit cell height of the crystal. After the surface treatments for generating the TiO2 terminated layer, the optimal conditions for vacuum annealing were found. The atomically smooth surface was verified by atomic force microscopy and lateral force microscopy. The temperature dependent resistance R(T) measured down to 52 mK indicates the metallic behavior, and its physical origin of the conduction was analyzed by fitting an equation involving electron-phonon and electron-electron scattering mechanisms. Our results are similar to R(T) reported for LaAlO3/SrTiO3 interfaces. In addition, the Hall effect measurement shows a clear resemblance between our reduced SrTiO3 and LaAlO3/SrTiO3 interfaces with sheet carrier density and Hall mobility. We expect that our treatments not only promote the usage of conducting SrTiO3 substrates for subsequent thin film growth but also contribute to the current research interest in two dimensional electron gas (2DEG) SrTiO3 and the interfaces between insulating oxides of LaAlO3/SrTiO3.

  4. Atomic diffusion across Ni50Ti50—Cu explosive welding interface: Diffusion layer thickness and atomic concentration distribution

    Science.gov (United States)

    Chen, Shi-Yang; Wu, Zhen-Wei; Liu, Kai-Xin

    2014-06-01

    Molecular dynamics simulations are carried out to study atomic diffusion in the explosive welding process of Ni50Ti50—Cu (at.%). By using a hybrid method which combines molecular dynamics simulation and classical diffusion theory, the thickness of the diffusion layer and the atomic concentration distribution across the welding interface are obtained. The results indicate that the concentration distribution curves at different times have a geometric similarity. According to the geometric similarity, the atomic concentration distribution at any time in explosive welding can be calculated. Ni50Ti50—Cu explosive welding and scanning electron microscope experiments are done to verify the results. The simulation results and the experimental results are in good agreement.

  5. High atomic diffusivity during pulsed laser irradiation of TiON quasi-amorphous films

    Energy Technology Data Exchange (ETDEWEB)

    Teodorescu, V.S., E-mail: teoval@infim.ro [National Institute of Materials Physics, 105 bis Atomistilor Street, 077125 Bucharest-Magurele (Romania); Maraloiu, A.V.; Negrea, R.F.; Ghica, D. [National Institute of Materials Physics, 105 bis Atomistilor Street, 077125 Bucharest-Magurele (Romania); Scarisoreanu, N.D.; Dinescu, M. [National Institute of Lasers, Plasma and Radiation, 409 Atomistilor Street, 077125 Bucharest-Magurele (Romania); Gartner, M. [Institute of Physical Chemistry, I.G. Murgulescu, Romanian Academy, 060021 Bucharest (Romania); Blanchin, M.-G. [ILM – Université Claude Bernard Lyon1, 69622 Villeurbanne cedex (France)

    2016-06-30

    Highlights: • The evidence of the structure of the TiON quasi-amorphous structure by HRTEM. • The evidence of the laser induced phase transition in this film structure. • Fast atomic diffusion in the amorphous film during the laser pulse action. - Abstract: Quasi-amorphous titanium oxynitride (TiON) films were obtained by annealing sol–gel anatase TiO{sub 2} films in NH{sub 3} atmosphere at 600 °C. These films were irradiated with 50 laser pulses using the fourth harmonic (266 nm) radiation of the Nd-YAG laser, with an average fluence of 20 mJ/cm{sup 2}. HRTEM observations of the pulsed laser irradiated films evidenced the rutile TiO{sub 2} nanocrystallites formation. The rutile structure was not present either in the TiON films before the laser irradiation, or in the initial sol–gel anatase TiO{sub 2} films. During the laser irradiation, the film structure remains in the solid state phase, as it results from the temperature estimation and microscopic observations. For the rutile nanocrystals formation, the atomic diffusion length of the oxygen and titanium atoms should be in the nanometric range during the laser pulse action, which implies a diffusivity close to the values observed in the liquid phase. We consider that the rutile phase formation is a proof of the fast atomic diffusion in the solid amorphous matrix, during the laser irradiation.

  6. Plasma enhanced chemical vapor deposition of iron doped thin dioxide films, their structure and photowetting effect

    Energy Technology Data Exchange (ETDEWEB)

    Sobczyk-Guzenda, A., E-mail: anna.sobczyk-guzenda@p.lodz.pl [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland); Owczarek, S.; Szymanowski, H. [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland); Wypych-Puszkarz, A. [Department of Molecular Physics, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz (Poland); Volesky, L. [Technical University of Liberec, Institute for Nanomaterials, Advanced Technologies and Innovation, Studentska 1402/2, 461 17 Liberec 1 (Czech Republic); Gazicki-Lipman, M. [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland)

    2015-08-31

    Radio frequency plasma enhanced chemical vapor deposition (RF PECVD) technique was applied for the purpose of deposition of iron doped titanium dioxide coatings from a gaseous mixture of oxygen with titanium (IV) chloride and iron (0) pentacarbonyl. Glass slides and silicon wafers were used as substrates. The coatings morphology was investigated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Their elemental and chemical composition was studied with the help of X-ray energy dispersive spectroscopy (EDS) and Fourier transform infrared (FTIR) spectroscopy, respectively, while their phase composition was analyzed with the Raman spectroscopy. For the determination of the film optical properties, ultraviolet (UV–Vis) spectroscopy techniques were used. Iron content in the range of 0.07 to 11.5 at.% was found in the coatings. FTIR studies showed that iron was built-in in the structure of TiO{sub 2} matrix. Surface roughness, assessed with the SEM and AFM techniques, increases with an increasing content of this element. Trace amounts of iron resulted in a lowering of an absorption threshold of the films and their optical gap, but the tendency was reversed for high concentrations of that element. The effect of iron doping on UV photowettability of the films was also studied and, for coatings containing up to 5% of iron, it was stronger than that exhibited by pure TiO{sub 2}. - Highlights: • Iron doped TiO{sub 2} films were deposited with the PECVD method. • Differences of surface morphology of the films with different iron content were shown. • Depending on the iron content, the film structure is either amorphous or crystalline. • A parabolic character of the optical gap dependence on the concentration of iron was observed. • Up to a concentration of 5% of iron, doped TiO{sub 2} films exhibit a super-hydrophilic effect.

  7. First-principles calculations atomic structure and elastic properties of Ti-Nb alloys

    CERN Document Server

    Timoshevskii, A N; Ivasishin, O M

    2011-01-01

    Elastic properties of Ti based \\beta-alloy were studied by the method of the model structure first principle calculations. Concentrational dependence of Young modulus for the binary \\beta-alloy Ti-Nb was discovered. It is shown that peculiarities visible at 15-18% concentrations can be related to the different Nb atoms distribution. Detailed comparison of the calculation results with the measurement results was done. Young modulus for the set of the ordered structures with different Nb atoms location, which simulate triple \\beta-alloys Ti-29.7%Zr-18.5%Nb and Ti-51.8%Zr-18.5%Nb have been calculated. The results of these calculations allowed us to suggest the concentration region for single-phase ternary \\beta-phase alloys possessing low values of Young's modulus.

  8. 等离子体强化PVC光催化降解的FT-IR和XPS分析%The Analysis of FT-IR and XPS on Plasma-Enhanced Solid-Phase Photocatalysis with TiO2

    Institute of Scientific and Technical Information of China (English)

    李晓菁; 乔冠军; 陈杰瑢

    2008-01-01

    纳米锐钛矿TiO2光催化剂用于室温下固相光催化降解等离子体改性聚氯乙烯(PVC)薄膜的研究.对薄膜进行了扫描电子显微镜(SEM)、傅立叶红外光谱(FI-IR)、X光电子能谱(XPS)分析.结果表明,400 W紫外光辐射60 h后,PVC质量损失为1.393%;等离子体改性PVC-TiO2质量损失为1.966%,这表明TiO2加速了高分子碳链的断裂和光氧化.在等离子体改性PVC-TiO2表面形成大量的裂纹,XPS显示光催化降解后在等离子体改性PVC-TiO2的表面的C和Cl的原子浓度分别为83.15%和0.89%,达到最小值.等离子体改性的PVC的降解机理是等离子体改性PVC后,在PVC表面生成的自由基诱发了TiO2的光催化氧化的·OH自由基反应.

  9. Silicon protected with atomic layer deposited TiO2

    DEFF Research Database (Denmark)

    Seger, Brian; Tilley, David S.; Pedersen, Thomas

    2013-01-01

    dioxide (TiO2) overlayers on silicon-based photocathodes generate extremely stable electrodes. These electrodes can produce an onset potential of +0.510 V vs. RHE and a hydrogen evolution saturation current of 22 mA cm−2 using the red part of the AM1.5 solar spectrum (λ > 635 nm, 38.6 mW cm−2). A PEC...... chronoamperometry experiment was carried out for 2 weeks under constant illumination at +0.300 V vs. RHE with negligible degradation (TiO2 overlayers may have...

  10. Quantum size effects in TiO2 thin films grown by atomic layer deposition.

    Science.gov (United States)

    Tallarida, Massimo; Das, Chittaranjan; Schmeisser, Dieter

    2014-01-01

    We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems.

  11. Quantum size effects in TiO2 thin films grown by atomic layer deposition

    OpenAIRE

    Tallarida, Massimo; Das, Chittaranjan; Schmeisser, Dieter

    2014-01-01

    We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier...

  12. Atomic investigation of alloying Cr, Ti, Y additions in a grain boundary of vanadium

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Pengbo, E-mail: zhangpb@dlmu.edu.cn [Department of Physics, Dalian Maritime University, Dalian 116026 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024 (China); Li, Xiaojie; Zhao, Jijun [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024 (China); Zheng, Pengfei; Chen, Jiming [Southwestern Institute of Physics, Chengdu 610041 (China)

    2016-01-15

    The effect of alloying additions (Cr, Ti and Y) in a vanadium (V) ∑3 (111) grain boundary (GB) is investigated by first-principles calculations. To determine site preference and segregation properties of Cr, Ti and Y in the GB and bulk, we calculate the formation energies and segregation energies for different interstitial and substitutional sites. Cr/Ti/Y atom prefers to segregate to the substitutional sites of the GB from bulk environment, whereas Cr segregation to GB is very weak. Based on the Rice and Wang's model, Cr acts as the GB cohesion, while Ti and Y are strong embrittlers. The analysis of atomic and electronic structures provides a reasonable expansion for the embrittlement behavior. Moreover, the effect of Cr, Ti and Y in the GB on solution of interstitial impurities C, N, O, H, and He are determined. The results show that Cr restrains solution of these impurities in the GB, while Ti tends to form Ti–N complex by absorbing N impurities and Y can absorbs O and He impurities. The present calculations are helpful for understanding the behavior of alloying Cr, Ti, Y additions at the grain boundary of vanadium.

  13. Noncontact AFM Imaging of Atomic Defects on the Rutile TiO2 (110) Surface

    DEFF Research Database (Denmark)

    Lauritsen, Jeppe Vang

    2015-01-01

    The atomic force microscope (AFM) operated in the noncontact mode (nc-AFM) offers a unique tool for real space, atomic-scale characterisation of point defects and molecules on surfaces, irrespective of the substrate being electrically conducting or non-conducting. The nc-AFM has therefore in rece...... on the rutile TiO2(110) surface. The present Chapter continues the review of nc-AFM initiated in Chap. 7 by Barth....

  14. Structural and optical properties of electrohydrodynamically atomized TiO{sub 2} nanostructured thin films

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Kyung-Hyun; Duraisamy, Navaneethan; Muhammad, Nauman Malik [Jeju National University, School of Mechatronics Engineering, Jeju (Korea, Republic of); Kim, Inyoung; Jo, Jeongdai [Korea Institute of Machinery and Materials (KIMM), Printed Electronics Research Center, Daejeon (Korea, Republic of); Choi, Hyunseok [Korea Institute of Industrial Technology (KITECH), Cheonan, Chungcheongnam-do (Korea, Republic of)

    2012-06-15

    In this paper, we report an alternate technique for the deposition of nanostructured TiO{sub 2} thin films using the electrohydrodynamic atomization (EHDA) technique using polyvinylpyrrolidone (PVP) as a stabilizer. The required parameters for achieving uniform TiO{sub 2} films using EHDA are also discussed in detail. X-ray diffraction results confirm that the TiO{sub 2} films were oriented in the anatase phase. Scanning electron microscope studies revealed the uniform deposition of the TiO{sub 2}. The purity of the films is characterized by using Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS), confirming the presence of Ti-O bonding in the films without any organic residue. The optical properties of the TiO{sub 2} films were measured by UV-visible spectroscopy, which shows that the transparency of the films is nearly 85% in the visible region. The current-voltage (I-V) curve of the TiO{sub 2} thin films shows a nearly linear behavior with 45 m{omega} cm of electrical resistivity. These results suggest that TiO{sub 2} thin films deposited via the EHDA method possess promising applications in optoelectronic devices. (orig.)

  15. Fracture mechanism of TiAl intermetallics caused by hydride and atomic hydrogen

    Institute of Scientific and Technical Information of China (English)

    高克玮; 王燕斌; 林志; 乔利杰; 褚武扬

    1999-01-01

    Hydrogen embrittlement (HE) of TiAl intermetallics was studied at room temperature. The results showed that there were two forms of HE in TiAl intermetallics, i.e. hydride HE and atomic HE. Most of hydrogen in TiAl intermetallics was transformed into hydrides at room temperature. The hydride exists as (TiAl)Hx for a low hydrogen concentration while it exists in several forms for a higher hydrogen concentration. Stress intensity factor KIC decreased with increase in hydride concentration. KIC decreased further when TiAl intermetallics were charged cathodically with hydrogen in 1 mol/L H2SO4 solution. Stress intensity factor during hydrogen charging KIH was about 50% KIC. 20% of the decrease was caused by hydrides while 30% was caused by atomic hydrogen. Mechanism of HE caused hydrides was the same as any other second phase in nature. Delayed fracture caused by atomic hydrogen resulted from hydrogen induced local plastic deformation.

  16. Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl4 and TMA precursors

    Science.gov (United States)

    Jinjuan, Xiang; Yuqiang, Ding; Liyong, Du; Junfeng, Li; Wenwu, Wang; Chao, Zhao

    2016-03-01

    TiAlC metal gate for the metal-oxide-semiconductor field-effect-transistor (MOSFET) is grown by the atomic layer deposition method using TiCl4 and Al(CH3)3(TMA) as precursors. It is found that the major product of the TiCl4 and TMA reaction is TiAlC, and the components of C and Al are found to increase with higher growth temperature. The reaction mechanism is investigated by using x-ray photoemission spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and scanning electron microscope (SEM). The reaction mechanism is as follows. Ti is generated through the reduction of TiCl4 by TMA. The reductive behavior of TMA involves the formation of ethane. The Ti from the reduction of TiCl4 by TMA reacts with ethane easily forming heterogenetic TiCH2, TiCH=CH2 and TiC fragments. In addition, TMA thermally decomposes, driving Al into the TiC film and leading to TiAlC formation. With the growth temperature increasing, TMA decomposes more severely, resulting in more C and Al in the TiAlC film. Thus, the film composition can be controlled by the growth temperature to a certain extent. Project supported by the Key Technology Study for 16/14 nm Program of the Ministry of Science and Technology of China (Grant No. 2013ZX02303).

  17. Photocatalytic C60-amorphous TiO2 composites prepared by atomic layer deposition

    Science.gov (United States)

    Justh, Nóra; Firkala, Tamás; László, Krisztina; Lábár, János; Szilágyi, Imre Miklós

    2017-10-01

    Nanocomposites of TiO2 and single fullerene (C60) molecule are prepared by atomic layer deposition (ALD). To create nucleation sites for the ALD reaction, the bare fullerene is functionalized by H2SO4/HNO3 treatment, which results in C60-SO3H. After a NaOH washing step the intermediate hydrolyzes into C60sbnd OH. This process and the consecutive ALD growth of TiO2 are monitored with FTIR, TG/DTA-MS, EDX, Raman, FTIR, XRD, and TEM measurements. Although the TiO2 grown by ALD at 80 and 160 °C onto fullerol is amorphous it enhances the decomposition of methyl orange under UV exposure. This study proves that amorphous TiO2 grown by low temperature ALD has photocatalytic activity, and it can be used e.g. as self-cleaning coatings also on heat sensitive substrates.

  18. Optical emission spectroscopy of excited atoms sputtered on a Ti surface under irradiation with multicharged Ar ions

    Energy Technology Data Exchange (ETDEWEB)

    Motohashi, K [Department of Applied Physics, Tokyo University of Agriculture and Technology, 2-24-16 Koganei-shi, Tokyo 184-8588 (Japan); Saitoh, Y [Department of Advanced Radiation Technology, Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292 (Japan); Kitazawa, S, E-mail: motohasi@cc.tuat.ac.j [Division of ITER Project, Fusion Research Development, Japan Atomic Energy Agency (JAEA), Naka, Ibaraki 311-0193 (Japan)

    2009-04-01

    Optical emission spectroscopy of excited atoms was carried out in order to investigate the sputtering processes on solid surfaces under irradiation of slow, multicharged ions. Many atomic lines of Ti I (neutral) and Ti II (single-charged ions) were observed in wavelengths from 250 to 750 nm with irradiation by Ar{sup 3+} (30 keV) on a Ti surface which was placed in a low pressure O{sub 2} atmosphere. The emission intensity of Ti I (520 nm) decreased monotonically with an increase of O{sub 2} partial pressure, whereas that of Ti I / II (670 nm, a 2nd order wavelength of 335 nm) slightly increased. From a semi-logarithmic plot of emission intensity for the 670 nm spectrum as a function of distance from the surface, the mean velocity of the excited Ti atoms and ions in a normal direction parallel to the surface, or

  19. Quantum confinement in amorphous TiO(2) films studied via atomic layer deposition.

    Science.gov (United States)

    King, David M; Du, Xiaohua; Cavanagh, Andrew S; Weimer, Alan W

    2008-11-05

    Despite the significant recent increase in quantum-based optoelectronics device research, few deposition techniques can reliably create the required functional nanoscale systems. Atomic layer deposition (ALD) was used here to study the quantum effects attainable through the use of this ångström-level controlled growth process. Size-dependent quantum confinement has been demonstrated using TiO(2) layers of nanoscale thickness applied to the surfaces of silicon wafers. TiO(2) films were deposited at 100 °C using TiCl(4) and H(2)O(2) in a viscous flow ALD reactor, at a rate of 0.61 Å/cycle. The low-temperature process was utilized to guarantee the amorphous deposition of TiO(2) layers and post-deposition thermal annealing was employed to promote crystallite-size modification. Hydrogen peroxide significantly reduced the residual chlorine that remained from a typical TiCl(4)-H(2)O ALD process at this temperature, down to 1.6%. Spectroscopic ellipsometry was used to quantify the optical properties both below and above the bandgap energy. A central composite design was employed to map the surface response of the film thickness-dependent bandgap shift for the as-deposited case and up to a thermal annealing temperature of 550 °C. The Brus model was used to develop a correlation between the amorphous TiO(2) film thickness and the quantum length to promote equivalent bandgap shifts.

  20. Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate

    Science.gov (United States)

    Xiang, Jinjuan; Zhang, Yanbo; Li, Tingting; Wang, Xiaolei; Gao, Jianfeng; Yin, Huaxiang; Li, Junfeng; Wang, Wenwu; Ding, Yuqiang; Xu, Chongying; Zhao, Chao

    2016-08-01

    TiAlX (X = N or C) films are developed by thermal atomic layer deposition (ALD) technique as metal gate. The TiAlX films are deposited by using four different combinations of precursors: A: TiCl4-NH3-TMA-NH3, B: TiCl4-TMA-NH3, C: TiCl4-NH3-TMA and D: TiCl4-TMA. The physical characteristics of the TiAlX films such as chemical composition, growth rate, resistivity and surface roughness are estimated by X-ray photoemission spectroscopy, scanning electron microscope, four point probe method and atomic force microscopy respectively. Additionally, the electrical characteristics of the TiAlX films are investigated by using metal-oxide-semiconductor (MOS) capacitor structure. It is shown that NH3 presence in the reaction makes the film more like TiAlN(C) while NH3 absence makes the film more like TiAlC. The TiAlC film deposited by TiCl4-TMA has effective work function close to mid-gap of Si, which is rather potential for low power FinFET device application.

  1. Advancements in Ti Alloy Powder Production by Close-Coupled Gas Atomization

    Energy Technology Data Exchange (ETDEWEB)

    Heidloff, Andy; Rieken, Joel; Anderson, Iver; Byrd, David

    2011-04-01

    As the technology for titanium metal injection molding (Ti-MIM) becomes more readily available, efficient Ti alloy fine powder production methods are required. An update on a novel close-coupled gas atomization system has been given. Unique features of the melting apparatus are shown to have measurable effects on the efficiency and ability to fully melt within the induction skull melting system (ISM). The means to initiate the melt flow were also found to be dependent on melt apparatus. Starting oxygen contents of atomization feedstock are suggested based on oxygen pick up during the atomization and MIM processes and compared to a new ASTM specification. Forming of titanium by metal injection molding (Ti-MIM) has been extensively studied with regards to binders, particle shape, and size distribution and suitable de-binding methods have been discovered. As a result, the visibility of Ti-MIM has steadily increased as reviews of technology, acceptability, and availability have been released. In addition, new ASTM specification ASTM F2885-11 for Ti-MIM for biomedical implants was released in early 2011. As the general acceptance of Ti-MIM as a viable fabrication route increases, demand for economical production of high quality Ti alloy powder for the preparation of Ti-MIM feedstock correspondingly increases. The production of spherical powders from the liquid state has required extensive pre-processing into different shapes thereby increasing costs. This has prompted examination of Ti-MIM with non-spherical particle shape. These particles are produced by the hydride/de-hydride process and are equi-axed but fragmented and angular which is less than ideal. Current prices for MIM quality titanium powder range from $40-$220/kg. While it is ideal for the MIM process to utilize spherical powders within the size range of 0.5-20 {mu}m, titanium's high affinity for oxygen to date has prohibited the use of this powder size range. In order to meet oxygen requirements the top

  2. Quantum size effects in TiO2 thin films grown by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Massimo Tallarida

    2014-01-01

    Full Text Available We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems.

  3. Phase decomposition and ordering in Ni-11.3 at.% Ti studied with atom probe tomography

    KAUST Repository

    Al-Kassab, Talaat

    2014-09-01

    The decomposition behavior of Ni-rich Ni-Ti was reassessed using Tomographic Atom Probe (TAP) and Laser Assisted Wide Angle Tomographic Atom Probe. Single crystalline specimens of Ni-11.3at.% Ti were investigated, the states selected from the decomposition path were the metastable γ″ and γ\\' states introduced on the basis of small-angle neutron scattering (SANS) and the two-phase model for evaluation. The composition values of the precipitates in these states could not be confirmed by APT data as the interface of the ordered precipitates may not be neglected. The present results rather suggest to apply a three-phase model for the interpretation of SANS measurements, in which the width of the interface remains nearly unchanged and the L12 structure close to 3:1 stoichiometry is maintained in the core of the precipitates from the γ″ to the γ\\' state. © 2014 Elsevier Ltd.

  4. Atomic layer deposition of TiO{sub 2} photonic crystal waveguide biosensors

    Energy Technology Data Exchange (ETDEWEB)

    Jardinier, E; French, P J [Electronic Instrumentation Laboratory, Delft University of Technology, 4 Mekelweg, 2628 CD Delft (Netherlands); Pandraud, G; Pham, M H; Sarro, P M [Electronic Components, Technology and Materials, Delft University of Technology, 17 Feldmannweg, 2628 CT Delft (Netherlands)], E-mail: g.pandraud@tudelft.nl

    2009-09-01

    A photonic crystal waveguide biosensor in the visible is presented for biosensing. The sensor is applied to Refractive Index (RI) measurements. The sensitivity at different wavelength is presented for both air holes and air core configurations of photonic crystal waveguide (PCW) made of TiO{sub 2}. It is shown that by using Atomic Layer Deposition (ALD) the expected sensitivity of the air core configuration outperforms the previously reported results.

  5. Investigation of Ag-TiO2 Interfacial Reaction of Highly Stable Ag Nanowire Transparent Conductive Film with Conformal TiO2 Coating by Atomic Layer Deposition.

    Science.gov (United States)

    Yeh, Ming-Hua; Chen, Po-Hsun; Yang, Yi-Ching; Chen, Guan-Hong; Chen, Hsueh-Shih

    2017-03-29

    The atomic layer deposition (ALD) technique is applied to coat Ag nanowires (NWs) with a highly uniform and conformal TiO2 layer to improve the stability and sustainability of Ag NW transparent conductive films (TCFs) at high temperatures. The TiO2 layer can be directly deposited on Ag NWs with a surface polyvinylpyrrolidone (PVP) coat that acts a bed for TiO2 seeding in the ALD process. The ALD TiO2 layer significantly enhances the thermal stability at least 100 fold when aged between 200-400 °C and also provides an extra function of violet-blue light filtration for Ag NW TCFs. Investigation into the interaction between TiO2 and Ag reveals that the conformal TiO2 shell could effectively prevent Ag from 1D-to-3D ripening. However, Ag could penetrate the conformal TiO2 shell and form nanocrystals on the TiO2 shell surface when it is aged at 400 °C. According to experimental data and thermodynamic evaluation, the Ag penetration leads to an interlayer composed of mixed Ag-Ag2O-amorphous carbon phases and TiO2-x at the Ag-TiO2 interface, which is thought to be caused by extremely high vapor pressure of Ag at the Ag-TiO2 interface at a higher temperature (e.g., 400 °C).

  6. Low temperature temporal and spatial atomic layer deposition of TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Aghaee, Morteza, E-mail: m.aghaee@tue.nl; Maydannik, Philipp S. [ASTRaL Group, Laboratory of Green Chemistry, Lappeenranta University of Technology, Sammonkatu 12, 50130 Mikkeli (Finland); Johansson, Petri; Kuusipalo, Jurkka [Paper Converting and Packaging Technology, Tampere University of Technology, P.O. Box 541, FI-33101 Tampere (Finland); Creatore, Mariadriana [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Homola, Tomáš; Cameron, David C. [R& D Center for Low-Cost Plasma and Nanotechnology Surface Modification, Masaryk University, Kotlářská 2, 611 37 Brno (Czech Republic)

    2015-07-15

    Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide as a titanium precursor and water, ozone, or oxygen plasma as coreactants. Low temperatures (80–120 °C) were used to grow moisture barrier TiO{sub 2} films on polyethylene naphthalate. The maximum growth per cycle for water, ozone, and oxygen plasma processes were 0.33, 0.12, and 0.56 Å/cycle, respectively. X-ray photoelectron spectrometry was used to evaluate the chemical composition of the layers and the origin of the carbon contamination was studied by deconvoluting carbon C1s peaks. In plasma-assisted ALD, the film properties were dependent on the energy dose supplied by the plasma. TiO{sub 2} films were also successfully deposited by using a spatial ALD (SALD) system based on the results from the temporal ALD. Similar properties were measured compared to the temporal ALD deposited TiO{sub 2}, but the deposition time could be reduced using SALD. The TiO{sub 2} films deposited by plasma-assisted ALD showed better moisture barrier properties than the layers deposited by thermal processes. Water vapor transmission rate values lower than 5 × 10{sup −4} g day{sup −1} m{sup −2} (38 °C and 90% RH) was measured for 20 nm of TiO{sub 2} film deposited by plasma-assisted ALD.

  7. Theoretical study on the correlation between the nature of atomic Li intercalation and electrochemical reactivity in TiS2 and TiO2.

    Science.gov (United States)

    Kim, Yang-Soo; Kim, Hee-Jin; Jeon, Young-A; Kang, Yong-Mook

    2009-02-12

    The electronic structures of LiTiS(2) and LiTiO(2) (having alpha-NaFeO(2) structure) have been investigated using discrete variational Xalpha molecular orbital methods. The alpha-NaFeO(2) structure is the equilibrium structure for LiCoO(2), which is widely used as a commercial cathode material for lithium secondary batteries. This study especially focused on the charge state of Li ions and the magnitude of covalency around Li ions. When the average voltage of lithium intercalation was calculated using pseudopotential methods, the average intercalation voltage of LiTiO(2) (2.076 V) was higher than that of LiTiS(2) (1.958 V). This can be explained by the differences in Mulliken charge of lithium and the bond overlap population between the intercalated Li ions and anion in LiTiO(2) as well as LiTiS(2). The Mulliken charge, which is the ionicity of Li atom, was approximately 0.12 in LiTiS(2), and the bond overlap population (BOP) indicating the covalency between Ti and S was about 0.339. When compared with the BOP (0.6) of C-H, which is one of the most famous example of covalent bonding, the intercalated Li ions in LiTiS(2) tend to form a quite strong covalent bond with the host material. In contrast, the Mulliken charge of lithium was about 0.79, which means that Li is fully ionized and the BOP, the covalency between Ti and O, was 0.181 in LiTiO(2). Because of the high ionicity of Li and the weak covalency between Ti and the nearest anion, LiTiO(2) has a higher intercalation voltage than LiTiS(2).

  8. Surface diffusivity of atomic deuterium on Ni3(Al, Ti)(110) surface with and without boron

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The electron-stimulated desorption was used to measure the surface diffusivity of at omic deuterium on clean and boron-modified Ni3(Al, Ti)(110) surfaces. Boron dosing was performed using a solid-state boronion source. Earlier studies showed that boron dissociates water readily at temperatures as low as 130 Kand that the resulting atomic hydrogen is bound to the surface strongly. The surface diffusi on coefficient of atomic D on 0.05 monolayer boron-modified surface was measured to be about 10 times smaller than that on the clean surface. This slower diffu sion of atomic hydrogen may explain why boron improves the ductility of polycrys talline Ni3Al in moist environments.

  9. Atomic layer deposition of undoped TiO2 exhibiting p-type conductivity.

    Science.gov (United States)

    Iancu, Andrei T; Logar, Manca; Park, Joonsuk; Prinz, Fritz B

    2015-03-11

    With prominent photocatalytic applications and widespread use in semiconductor devices, TiO2 is one of the most popular metal oxides. However, despite its popularity, it has yet to achieve its full potential due to a lack of effective methods for achieving p-type conductivity. Here, we show that undoped p-type TiO2 films can be fabricated by atomic layer deposition (ALD) and that their electrical properties can be controlled across a wide range using proper postprocessing anneals in various ambient environments. Hole mobilities larger than 400 cm(2)/(V·s) are accessible superseding the use of extrinsic doping, which generally produces orders of magnitude smaller values. Through a combination of analyses and experiments, we provide evidence that this behavior is primarily due to an excess of oxygen in the films. This discovery enables entirely new categories of TiO2 devices and applications, and unlocks the potential to improve existing ones. TiO2 homojunction diodes fabricated completely by ALD are developed as a demonstration of the utility of these techniques and shown to exhibit useful rectifying characteristics even with minimal processing refinement.

  10. Efficient solar photocatalytic activity of TiO2 coated nano-porous silicon by atomic layer deposition

    Science.gov (United States)

    Sampath, Sridhar; Maydannik, Philipp; Ivanova, Tatiana; Shestakova, Marina; Homola, Tomáš; Bryukvin, Anton; Sillanpää, Mika; Nagumothu, Rameshbabu; Alagan, Viswanathan

    2016-09-01

    In the present study, TiO2 coated nano-porous silicon (TiO2/PS) was prepared by atomic layer deposition (ALD) whereas porous silicon was prepared by stain etching method for efficient solar photocatalytic activity. TiO2/PS was characterized by FESEM, AFM, XRD, XPS and DRS UV-vis spectrophotometer. Absorbance spectrum revealed that TiO2/PS absorbs complete solar light with wave length range of 300 nm-800 nm and most importantly, it absorbs stronger visible light than UV light. The reason for efficient solar light absorption of TiO2/PS is that nanostructured TiO2 layer absorbs UV light and nano-porous silicon layer absorbs visible light which is transparent to TiO2 layer. The amount of visible light absorption of TiO2/PS directly increases with increase of silicon etching time. The effect of silicon etching time of TiO2/PS on solar photocatalytic activity was investigated towards methylene blue dye degradation. Layer by layer solar absorption mechanism was used to explain the enhanced photocatalytic activity of TiO2/PS solar absorber. According to this, the photo-generated electrons of porous silicon will be effectively injected into TiO2 via hetero junction interface which leads to efficient charge separation even though porous silicon is not participating in any redox reactions in direct.

  11. Effect of annealing on atomic ordering of amorphous ZrTaTiNbSi alloy

    Science.gov (United States)

    Yang, Tsung-Han; Huang, Rong-Tang; Wu, Cheng-An; Chen, Fu-Rong; Gan, Jon-Yiew; Yeh, Jien-Wei; Narayan, Jagdish

    2009-12-01

    In this letter, we have reported on initial stages of atomic ordering in ZrTaTiNbSi amorphous films during annealing. The atomic ordering and structure evolution were studied in Zr17Ta16Ti19Nb22Si26 amorphous films as a function of annealing temperature in the temperature range from 473 to 1173 K. Up to annealing temperature of 1173 K, the films retained amorphous structure, but the degree of disorder is increased with the increase in temperature. The formation of Si-M covalent bonds, which contributed to the local atomic arrangement, occurred in the initial stages of ordering. The bonding reactions between Si and other metal species explain the anomalous structural changes which were observed in x-ray diffraction and transmission electron microscopy. We discuss the stages of phase transformation for amorphous films as a function of annealing temperature. From these results, we propose that annealing leads to formation of random Si-M4 tetrahedron, and two observed rings, a first and second in the electron diffraction patterns compared to M-M and Si-M bond length, respectively.

  12. Atomic study on the ordered structure in Al melts induced by liquid/substrate interface with Ti solute

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, H. L.; Han, Y. F., E-mail: yfhan@sjtu.edu.cn, E-mail: bdsun@sjtu.edu.cn; Zhou, W.; Dai, Y. B. [Shanghai Key Laboratory of Advanced High-temperature Materials and Precision Forming, Shanghai Jiao Tong University, No. 800, Dongchuan Road, Shanghai 200240 (China); Wang, J.; Sun, B. D., E-mail: yfhan@sjtu.edu.cn, E-mail: bdsun@sjtu.edu.cn [Shanghai Key Laboratory of Advanced High-temperature Materials and Precision Forming, Shanghai Jiao Tong University, No. 800, Dongchuan Road, Shanghai 200240 (China); State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, No. 800, Dongchuan Road, Shanghai 200240 (China)

    2015-01-26

    Atomic ordering in Al melts induced by liquid/substrate interface with Ti solute was investigated by ab initio molecular dynamics simulations and in-situ synchrotron X-ray diffraction. It is predicted that deformed nanoscale ordering Al layers with a rhombohedral-centered hexagonal structure (R3{sup ¯}m space group) instead of the intrinsic fcc structure (Fm3{sup ¯}m space group) form on substrate at temperature above Al liquids. With Al atoms stacking away from the interface, the ordering structure reaches a critical thickness, which inhibits the consecutive stacking of Al atoms on substrates. The locally stacking reconstruction induced by Ti atom relieves the accumulated elastic strain energy in ordered Al layers, facilitating fully heterogeneous nucleation on substrate beyond the deformed ordering Al layer around the melting point. The roles of liquid/substrate interface with Ti solute in the physical behavior of heterogeneous nucleation on substrate were discussed.

  13. Atomic layer deposited TiO{sub 2} for implantable brain-chip interfacing devices

    Energy Technology Data Exchange (ETDEWEB)

    Cianci, E., E-mail: elena.cianci@mdm.imm.cnr.it [Laboratorio MDM, IMM-CNR, 20864 Agrate Brianza (MB) (Italy); Lattanzio, S. [Istituto di Fisiologia, Dipartimento di Anatomia Umana e Fisiologia, Universita di Padova, 35131 Padova (Italy); Dipartimento di Ingegneria dell' Informazione, Universita di Padova, 35131 Padova (Italy); Seguini, G. [Laboratorio MDM, IMM-CNR, 20864 Agrate Brianza (Italy); Vassanelli, S. [Istituto di Fisiologia, Dipartimento di Anatomia Umana e Fisiologia, Universita di Padova, 35131 Padova (Italy); Fanciulli, M. [Laboratorio MDM, IMM-CNR, 20864 Agrate Brianza (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano-Bicocca, 20126 Milano (Italy)

    2012-05-01

    In this paper we investigated atomic layer deposition (ALD) TiO{sub 2} thin films deposited on implantable neuro-chips based on electrolyte-oxide-semiconductor (EOS) junctions, implementing both efficient capacitive neuron-silicon coupling and biocompatibility for long-term implantable functionality. The ALD process was performed at 295 Degree-Sign C using titanium tetraisopropoxide and ozone as precursors on needle-shaped silicon substrates. Engineering of the capacitance of the EOS junctions introducing a thin Al{sub 2}O{sub 3} buffer layer between TiO{sub 2} and silicon resulted in a further increase of the specific capacitance. Biocompatibility for long-term implantable neuroprosthetic systems was checked upon in-vitro treatment.

  14. Tensile and impact properties of General Atomics 832864 heat of V-4Cr-4Ti alloy

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, H.; Nowicki, L.J.; Gazda, J.; Billone, M.C.; Smith, D.L. [Argonne National Lab., IL (United States); Johnson, W.R.; Trester, P. [General Atomics, San Diego, CA (United States)

    1998-09-01

    A 1300-kg heat of V-4Cr-4Ti alloy was procured by General Atomics (GA) for the DIII-D radiative divertor program. To determine the mechanical properties of this alloy, tensile and Charpy tests were conducted on specimens prepared from pieces of 4.8-mm-thick as-rolled plates, a major product form for the DIII-D application. The tensile tests were conducted at three temperatures, 26, 280 and 380 C, the last two being the anticipated peak temperatures during DIII-D boronization and postvent bake-out, respectively. Results from these tests show that the tensile and impact properties of the 832864 heat are comparable to those of the other smaller V-(4-5)Cr-(4-5)Ti alloy heats previously developed by the US Fusion Materials Program and that scale-up of vanadium alloy production can be successfully achieved as long as reasonable process control is implemented.

  15. Photocatalytic hollow TiO2 and ZnO nanospheres prepared by atomic layer deposition.

    Science.gov (United States)

    Justh, Nóra; Bakos, László Péter; Hernádi, Klára; Kiss, Gabriella; Réti, Balázs; Erdélyi, Zoltán; Parditka, Bence; Szilágyi, Imre Miklós

    2017-06-28

    Carbon nanospheres (CNSs) were prepared by hydrothermal synthesis, and coated with TiO2 and ZnO nanofilms by atomic layer deposition. Subsequently, through burning out the carbon core templates hollow metal oxide nanospheres were obtained. The substrates, the carbon-metal oxide composites and the hollow nanospheres were characterized with TG/DTA-MS, FTIR, Raman, XRD, SEM-EDX, TEM-SAED and their photocatalytic activity was also investigated. The results indicate that CNSs are not beneficial for photocatalysis, but the crystalline hollow metal oxide nanospheres have considerable photocatalytic activity.

  16. Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Cheng-Yang; Hong, Shao-Chyang [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Hwang, Fu-Tsai [Department of Electro-Optical Engineering, National United University, Miao-Li, 36003, Taiwan (China); Lai, Li-Wen [ITRI South, Industrial Technology Research Institute, Liujia, Tainan, 73445, Taiwan (China); Lin, Tan-Wei [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Liu, Day-Shan, E-mail: dsliu@sunws.nfu.edu.tw [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China)

    2011-10-31

    The effect of a nickel oxide (NiO{sub x}) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO{sub x}) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO{sub x} films, with and without a NiO{sub x} seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO{sub x} film, deposited on a NiO{sub x} seed layer, was found to be lower than that of a pure TiO{sub x} film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO{sub x} film deposited onto the NiO{sub x} seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO{sub x}/TiO{sub x} system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

  17. Atomic layer deposition of TiO2-nanomembrane-based photocatalysts with enhanced performance

    Directory of Open Access Journals (Sweden)

    Riyanto Edy

    2016-11-01

    Full Text Available In this study, TiO2 and TiO2-ZnO nanomembranes were fabricated by atomic layer deposition using the three-dimensionally porous template and their photocatalytic properties were investigated. The nanomembranes were firstly deposited onto the surface of polyurethane porous sponge templates (sacrificial templates, followed by a calcination at 500 or 800 °C. Three-dimensionally porous structures as a replica of the porous sponge templates were thus achieved. By a pulverizing process, the porous structures were broken into small pieces, which were then employed as photocatalyst. Experimental results show that the degree of crystallinity is raised by increasing of the nanomembrane thickness due to the increase of the grain size with minimizing the number of grain boundaries in the thicker nanomembrane, which is beneficial to enhance the photocatalysis efficiency. On the other hand, the photocatalytic activity can also be improved by TiO2-ZnO composite, due to lower electron-hole recombination possibility and better carrier conductivity.

  18. Atomic layer deposition of TiO2-nanomembrane-based photocatalysts with enhanced performance

    Science.gov (United States)

    Edy, Riyanto; Huang, Gaoshan; Zhao, Yuting; Zhang, Jing; Mei, Yongfeng; Shi, Jianjun

    2016-11-01

    In this study, TiO2 and TiO2-ZnO nanomembranes were fabricated by atomic layer deposition using the three-dimensionally porous template and their photocatalytic properties were investigated. The nanomembranes were firstly deposited onto the surface of polyurethane porous sponge templates (sacrificial templates), followed by a calcination at 500 or 800 °C. Three-dimensionally porous structures as a replica of the porous sponge templates were thus achieved. By a pulverizing process, the porous structures were broken into small pieces, which were then employed as photocatalyst. Experimental results show that the degree of crystallinity is raised by increasing of the nanomembrane thickness due to the increase of the grain size with minimizing the number of grain boundaries in the thicker nanomembrane, which is beneficial to enhance the photocatalysis efficiency. On the other hand, the photocatalytic activity can also be improved by TiO2-ZnO composite, due to lower electron-hole recombination possibility and better carrier conductivity.

  19. Surface structure of anatase TiO{sub 2}(001): Reconstruction, atomic steps, and domains

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Yong; Gan, Shupan; Chambers, Scott A.; Altman, Eric I.

    2001-06-15

    The surface structure of anatase TiO{sub 2}(001) was investigated using scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), reflection high-energy electron diffraction (RHEED), and low-energy electron diffraction (LEED). A two-domain (1{times}4)/(4{times}1) reconstruction, similar to those previously reported in LEED and ion scattering studies, was observed by STM and RHEED. This reconstruction was found to be stable not only from room temperature to 850{degree}C in ultrahigh vacuum and oxygen-rich environments, but also during the anatase film growth. High-resolution STM images obtained at positive sample biases revealed two types of atomic row within each surface unit cell, indicating different Ti-derived states at the surface. At the same time, XPS of the reconstructed surfaces showed no evidence of Ti{sup 3+}. Based on the STM, XPS, RHEED, and LEED results, an {open_quotes}added{close_quotes}-and-{open_quotes}missing{close_quotes}-row model is proposed to account for the (1{times}4) reconstruction. Atomic steps and their relationship to the population of (1{times}4) and (4{times}1) domains were also investigated. The results showed that for vicinal surfaces the domain population depended strongly on the overall surface step orientation. While populations of the (1{times}4) and the (4{times}1) domains were nearly equal on flat (001) surfaces, they became significantly lopsided on a surface with its normal 2{degree} away from the (001) direction, demonstrating a strong correlation between surface steps and domain population on vicinal surfaces.

  20. Surface Structure of Anatase TiO{sub 2}(001): Reconstruction, Atomic Steps, and Domains

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Yong; Gan, Shupan; Chambers, Scott A.; Altman, Eric I.

    2001-06-15

    The surface structure of anatase TiO{sub 2}(001) was investigated using scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), reflection high energy electron diffraction (RHEED), and low energy electron diffraction (LEED). A two-domain (1 x 4)/(4 x 1) reconstruction, similar to those previously reported in LEED and ion scattering studies, was observed by STM and RHEED. This reconstruction was found to be stable not only from room temperature to 850 C in ultra-high vacuum and oxygen rich environments, but also during the anatase film growth. High-resolution STM images obtained at positive sample biases revealed two types of atomic rows within each surface unit cell, indicating different Ti-derived states at the surface. At the same time, XPS of the reconstructed surfaces showed no evidence of Ti{sup 3+}. Based on the STM, XPS, RHEED, and LEED results, an ''added''-and-''missing''-row model is proposed to account for the (1 x 4) reconstruction. Atomic steps and their relationship to the population of (1 x 4) and (4 x 1) domains were also investigated. Results showed that for vicinal surfaces, the domain population depended strongly on the overall surface step orientation. While populations of the (1 x 4) and the (4 x 1) domains were nearly equal on the flat (001) surfaces, they became significantly lopsided on the surface with its normal 2{sup o} away from the (001) direction, demonstrating a strong correlation between surface steps and domain population on vicinal surfaces.

  1. Surface passivation of nano-textured fluorescent SiC by atomic layer deposited TiO2

    DEFF Research Database (Denmark)

    Lu, Weifang; Ou, Yiyu; Jokubavicius, Valdas

    2016-01-01

    Nano-textured surfaces have played a key role in optoelectronic materials to enhance the light extraction efficiency. In this work, morphology and optical properties of nano-textured SiC covered with atomic layer deposited (ALD) TiO2 were investigated. In order to obtain a high quality surface...... for TiO2 deposition, a three-step cleaning procedure was introduced after RIE etching. The morphology of anatase TiO2 indicates that the nano-textured substrate has a much higher surface nucleated grain density than a flat substrate at the beginning of the deposition process. The corresponding...... reflectance increases with TiO2 thickness due to increased surface diffuse reflection. The passivation effect of ALD TiO2 thin film on the nano-textured fluorescent 6H-SiC sample was also investigated and a PL intensity improvement of 8.05% was obtained due to the surface passivation....

  2. Quantum size effects in TiO2 thin films grown by atomic layer deposition

    OpenAIRE

    Massimo Tallarida; Chittaranjan Das; Dieter Schmeisser

    2014-01-01

    We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier...

  3. Finite-Temperature Atomic Structure of 180^o Ferroelectric Domain Walls in PbTiO3

    OpenAIRE

    Angoshtari, Arzhang; Yavari, Arash

    2010-01-01

    In this letter we obtain the finite-temperature structure of 180^o domain walls in PbTiO3 using a quasi-harmonic lattice dynamics approach. We obtain the temperature dependence of the atomic structure of domain walls from 0K up to room temperature. We also show that both Pb-centered and Ti-centered 180^o domain walls are thicker at room temperature; domain wall thickness at T=300K is about three times larger than that of T=0K. Our calculations show that Ti-centered domain walls have a lower f...

  4. Review: Plasma-enhanced chemical vapor deposition of nanocrystalline diamond

    Directory of Open Access Journals (Sweden)

    Katsuyuki Okada

    2007-01-01

    Full Text Available Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles of 200–700 nm diameter have been prepared in a 13.56 MHz low-pressure inductively coupled CH4/CO/H2 plasma. The bonding state of carbon atoms was investigated by ultraviolet-excited Raman spectroscopy. Electron energy loss spectroscopy identified sp2-bonded carbons around the 20–50 nm subgrains of nanocrystalline diamond particles. Plasma diagnostics using a Langmuir probe and the comparison with plasma simulation are also reviewed. The electron energy distribution functions are discussed by considering different inelastic interaction channels between electrons and heavy particles in a molecular CH4/H2 plasma.

  5. First-principles study of atomic structure and electronic properties of Si and F doped anatase TiO2

    Directory of Open Access Journals (Sweden)

    Li Hongping

    2015-09-01

    Full Text Available Chemical doping represents one of the most effective ways in engineering electronic structures of anatase TiO2 for practical applications. Here, we investigate formation energies, geometrical structures, and electronic properties of Si-, F-doped and Si/F co-doped anatase TiO2 by using spin-polarized density functional theory calculation. We find that the co-doped TiO2 is thermodynamically more favorable than the Si- and F-doped TiO2- Structural analysis shows that atomic impurity varies crystal constants slightly. Moreover, all the three doped systems show a pronounced narrowing of band gap by 0.33 eV for the F-doped TiO2, 0.17 eV for the Si-doped TiO2, and 0.28 eV for the Si/F-co-doped TiO2, which could account for the experimentally observed redshift of optical absorption edge. Our calculations suggest that the Si/F-co-doping represents an effective way in tailoring electronic structure and optical properties of anatase TiO2.

  6. Atomic layer deposition of TiO2 on surface modified nanoporous low-k films.

    Science.gov (United States)

    Levrau, Elisabeth; Devloo-Casier, Kilian; Dendooven, Jolien; Ludwig, Karl F; Verdonck, Patrick; Meersschaut, Johan; Baklanov, Mikhail R; Detavernier, Christophe

    2013-10-01

    This paper explores the effects of different plasma treatments on low dielectric constant (low-k) materials and the consequences for the growth behavior of atomic layer deposition (ALD) on these modified substrates. An O2 and a He/H2 plasma treatment were performed on SiCOH low-k films to modify their chemical surface groups. Transmission FTIR and water contact angle (WCA) analysis showed that the O2 plasma changed the hydrophobic surface completely into a hydrophilic surface, while the He/H2 plasma changed it only partially. In a next step, in situ X-ray fluorescence (XRF), ellipsometric porosimetry (EP), and Rutherford backscattering spectroscopy (RBS) were used to characterize ALD growth of TiO2 on these substrates. The initial growth of TiO2 was found to be inhibited in the original low-k film containing only Si-CH3 surface groups, while immediate growth was observed in the hydrophilic O2 plasma treated film. The latter film was uniformly filled with TiO2 after 8 ALD cycles, while pore filling was delayed to 17 ALD cycles in the hydrophobic film. For the He/H2 plasma treated film, containing both Si-OH and Si-CH3 groups, the in situ XRF data showed that TiO2 could no longer be deposited in the He/H2 plasma treated film after 8 ALD cycles, while EP measurements revealed a remaining porosity. This can be explained by the faster deposition of TiO2 in the hydrophilic top part of the film than in the hydrophobic bulk which leaves the bulk porous, as confirmed by RBS depth profiling. The outcome of this research is not only of interest for the development of advanced interconnects in ULSI technology, but also demonstrates that ALD combined with RBS analysis is a handy approach to analyze the modifications induced by a plasma treatment on a nanoporous thin film.

  7. Nitrogen-doping of bulk and nanotubular TiO{sub 2} photocatalysts by plasma-assisted atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yi, E-mail: Y.Zhang2@tue.nl [Eindhoven University of Technology, Inorganic Materials Chemistry Group, Department of Chemical Engineering and Chemistry, P.O. Box 513, 5600 MB, Eindhoven (Netherlands); Creatore, Mariadriana, E-mail: M.Creatore@tue.nl [Eindhoven University of Technology, Plasma and Materials Processing Group, Department of Applied Physics, P.O. Box 513, 5600 MB, Eindhoven (Netherlands); Ma, Quan-Bao, E-mail: Q.Ma1@tue.nl [Eindhoven University of Technology, Inorganic Materials Chemistry Group, Department of Chemical Engineering and Chemistry, P.O. Box 513, 5600 MB, Eindhoven (Netherlands); El Boukili, Aishah, E-mail: AishaBoukili@hotmail.com [Eindhoven University of Technology, Inorganic Materials Chemistry Group, Department of Chemical Engineering and Chemistry, P.O. Box 513, 5600 MB, Eindhoven (Netherlands); Gao, Lu, E-mail: L.Gao@tue.nl [Eindhoven University of Technology, Inorganic Materials Chemistry Group, Department of Chemical Engineering and Chemistry, P.O. Box 513, 5600 MB, Eindhoven (Netherlands); Verheijen, Marcel A., E-mail: M.A.Verheijen@tue.nl [Eindhoven University of Technology, Plasma and Materials Processing Group, Department of Applied Physics, P.O. Box 513, 5600 MB, Eindhoven (Netherlands); Verhoeven, M.W.G.M., E-mail: M.W.G.M.Verhoeven@tue.nl [Eindhoven University of Technology, Inorganic Materials Chemistry Group, Department of Chemical Engineering and Chemistry, P.O. Box 513, 5600 MB, Eindhoven (Netherlands); Hensen, Emiel J.M., E-mail: e.j.m.hensen@tue.nl [Eindhoven University of Technology, Inorganic Materials Chemistry Group, Department of Chemical Engineering and Chemistry, P.O. Box 513, 5600 MB, Eindhoven (Netherlands)

    2015-03-01

    Highlights: • PA-ALD TiO{sub 2-x}N{sub x} layers on Si wafer, calcined Ti foil and nanotubular TiO{sub 2} array. • Controllable N content and chemical state in TiO{sub 2-x}N{sub x} by tuning PA-ALD parameters. • Interstitial N increases photocurrent, substitutional N decreases photocurrent. • Unchanged photocurrent of PA-ALD TiO{sub 2-x}N{sub x} layer on nanotubular TiO{sub 2} array. • Unchanged photocurrent due to the constant N content in TiO{sub 2-x}N{sub x} layer. - Abstract: Plasma-assisted atomic layer deposition (PA-ALD) was adopted to deposit TiO{sub 2-x}N{sub x} ultrathin layers on Si wafers, calcined Ti foils and nanotubular TiO{sub 2} arrays. A range of N content and chemical bond configurations were obtained by varying the background gas (O{sub 2} or N{sub 2}) during the Ti precursor exposure, while the N{sub 2}/H{sub 2}-fed inductively coupled plasma exposure time was varied between 2 and 20 s. On calcined Ti foils, a positive effect from N doping on photocurrent density was observed when O{sub 2} was the background gas with a short plasma exposure time (5 and 10 s). This correlates with the presence of interstitial N states in the TiO{sub 2} with a binding energy of 400 eV (N{sub interst}) as measured by X-ray photoelectron spectroscopy. A longer plasma time or the use of N{sub 2} as background gas results in formation of N state with a binding energy of 396 eV (N{sub subst}) and very low photocurrents. These N{sub subst} are linked to the presence of Ti{sup 3+}, which act as detrimental recombination center for photo-generated electron-hole pairs. On contrary, PA-ALD treated nanotubular TiO{sub 2} arrays show no variation of photocurrent density (with respect to the pristine nanotubes) upon different plasma exposure times and when the O{sub 2} recipe was adopted. This is attributed to constant N content in the PA-ALD TiO{sub 2-x}N{sub x}, regardless of the adopted recipe.

  8. Effect of Cu Content on Atomic Positions of Ti50Ni50−xCux Shape Memory Alloys Based on Density Functional Theory Calculations

    Directory of Open Access Journals (Sweden)

    Liangliang Gou

    2015-11-01

    Full Text Available The study of crystal structures in shape memory alloys is of fundamental importance for understanding the shape memory effect. In order to investigate the mechanism of how Cu content affects martensite crystal structures of TiNiCu alloys, the present research examines the atomic displacement of Ti50Ni50−xCux (x = 0, 5, 12.5, 15, 18.75, 20, 25 shape memory alloys using density functional theory (DFT. By the introduction of Cu atoms into TiNi martensite crystal to replace Ni, the displacements of Ti and Ni/Cu atoms along the x-axis are obvious, but they are minimal along the y- and z-axes. It is found that along the x-axis, the two Ti atoms in the unit cell move in opposite directions, and the same occurred with the two Ni/Cu atoms. With increasing Cu content, the distance between the two Ni/Cu atoms increases while the Ti atoms draw closer along the x-axis, leading to a rotation of the (100 plane, which is responsible for the decrease in the monoclinic angle. It is also found that the displacements of both Ti atoms and Ni/Cu atoms along the x-axis are progressive, which results in a gradual change of monoclinic angle and a transition to B19 martensite crystal structure.

  9. Atomic layer deposition TiO{sub 2} coated porous silicon surface: Structural characterization and morphological features

    Energy Technology Data Exchange (ETDEWEB)

    Iatsunskyi, Igor, E-mail: igoyat@amu.edu.pl [NanoBioMedical Centre, Adam Mickiewicz University, 85 Umultowska str., 61-614, Poznan (Poland); Department of Experimental Physics, Odessa National I.I. Mechnikov University, 42, Pastera str., 65023 Odessa (Ukraine); Jancelewicz, Mariusz; Nowaczyk, Grzegorz [NanoBioMedical Centre, Adam Mickiewicz University, 85 Umultowska str., 61-614, Poznan (Poland); Kempiński, Mateusz [NanoBioMedical Centre, Adam Mickiewicz University, 85 Umultowska str., 61-614, Poznan (Poland); Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poland (Poland); Peplińska, Barbara [NanoBioMedical Centre, Adam Mickiewicz University, 85 Umultowska str., 61-614, Poznan (Poland); Department of Macromolecular Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznan (Poland); Jarek, Marcin; Załęski, Karol [NanoBioMedical Centre, Adam Mickiewicz University, 85 Umultowska str., 61-614, Poznan (Poland); Jurga, Stefan [NanoBioMedical Centre, Adam Mickiewicz University, 85 Umultowska str., 61-614, Poznan (Poland); Department of Macromolecular Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznan (Poland); Smyntyna, Valentyn [Department of Experimental Physics, Odessa National I.I. Mechnikov University, 42, Pastera str., 65023 Odessa (Ukraine)

    2015-08-31

    TiO{sub 2} thin films were grown on highly-doped p-Si (100) macro- and mesoporous structures by atomic layer deposition (ALD) using TiCl{sub 4} and deionized water as precursors at 300 °C. The crystalline structure, chemical composition, and morphology of the deposited films and initial silicon nanostructures were investigated by scanning electron microscopy, transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy and X-ray diffraction (XRD). The mean size of TiO{sub 2} crystallites was determined by TEM, XRD and Raman spectroscopy. It was shown that the mean crystallite size and the crystallinity of the TiO{sub 2} are influenced dramatically by the morphology of the porous silicon, with the mesoporous silicon resulting in a much finer grain size and amorphous structure than the macroporous silicon having a partially crystal anatase phase. A simple model of the ALD layer growth inside the pores was presented. - Highlights: • The morphology and chemical composition of TiO{sub 2} and porous Si were established. • The approximate size of TiO{sub 2} nanocrystals was estimated. • The model of the atomic layer deposition coating in the porous Si was presented.

  10. The atomic surface structure of SrTiO3 (001) studied with synchrotron X-rays

    NARCIS (Netherlands)

    Vonk, V.; Konings, S.; van Hummel, G.J.; Harkema, Sybolt; Graafsma, H

    2005-01-01

    The atomic surface structure of single terminated SrTiO3(0 0 1) (1 × 1) is investigated employing surface X-ray diffraction. In order to obtain these surfaces a special treatment is needed consisting of chemical etching and annealing. Since this is done in an aqueous and subsequently oxygen

  11. Phase change properties of Ti-Sb-Te thin films deposited by thermal atomic layer deposition

    Science.gov (United States)

    Song, Sannian; Shen, Lanlan; Song, Zhitang; Yao, Dongning; Guo, Tianqi; Li, Le; Liu, Bo; Wu, Liangcai; Cheng, Yan; Ding, Yuqiang; Feng, Songlin

    2016-10-01

    Phase change random access memory (PCM) appears to be the strongest candidate for next-generation high density nonvolatile memory. The fabrication of ultrahigh density PCM depends heavily on the thin film growth technique for the phase changing chalcogenide material. In this study, TiSb2Te4 (TST) thin films were deposited by thermal atomic layer deposition (ALD) method using TiCl4, SbCl3, (Et3Si)2Te as precursors. The threshold voltage for the cell based on thermal ALD-deposited TST is about 2.0 V, which is much lower than that (3.5 V) of the device based on PVD-deposited Ge2Sb2Te5 (GST) with the identical cell architecture. Tests of TST-based PCM cells have demonstrated a fast switching rate of 100 ns. Furthermore, because of the lower melting point and thermal conductivities of TST materials, TST-based PCM cells exhibit 19% reduction of pulse voltages for Reset operation compared with GST-based PCM cells. These results show that thermal ALD is an attractive method for the preparation of phase change materials.

  12. Atomic Layer Deposition for Coating of High Aspect Ratio TiO2 Nanotube Layers

    Science.gov (United States)

    2016-01-01

    We present an optimized approach for the deposition of Al2O3 (as a model secondary material) coating into high aspect ratio (≈180) anodic TiO2 nanotube layers using the atomic layer deposition (ALD) process. In order to study the influence of the diffusion of the Al2O3 precursors on the resulting coating thickness, ALD processes with different exposure times (i.e., 0.5, 2, 5, and 10 s) of the trimethylaluminum (TMA) precursor were performed. Uniform coating of the nanotube interiors was achieved with longer exposure times (5 and 10 s), as verified by detailed scanning electron microscopy analysis. Quartz crystal microbalance measurements were used to monitor the deposition process and its particular features due to the tube diameter gradient. Finally, theoretical calculations were performed to calculate the minimum precursor exposure time to attain uniform coating. Theoretical values on the diffusion regime matched with the experimental results and helped to obtain valuable information for further optimization of ALD coating processes. The presented approach provides a straightforward solution toward the development of many novel devices, based on a high surface area interface between TiO2 nanotubes and a secondary material (such as Al2O3). PMID:27643411

  13. Atomic Layer Deposition of Pd Nanoparticles on TiO₂ Nanotubes for Ethanol Electrooxidation: Synthesis and Electrochemical Properties.

    Science.gov (United States)

    Assaud, Loïc; Brazeau, Nicolas; Barr, Maïssa K S; Hanbücken, Margrit; Ntais, Spyridon; Baranova, Elena A; Santinacci, Lionel

    2015-11-11

    Palladium nanoparticles are grown on TiO2 nanotubes by atomic layer deposition (ALD), and the resulting three-dimensional nanostructured catalysts are studied for ethanol electrooxidation in alkaline media. The morphology, the crystal structure, and the chemical composition of the Pd particles are fully characterized using scanning and transmission electron microscopies, X-ray diffraction, and X-ray photoelectron spectroscopy. The characterization revealed that the deposition proceeds onto the entire surface of the TiO2 nanotubes leading to the formation of well-defined and highly dispersed Pd nanoparticles. The electrooxidation of ethanol on Pd clusters deposited on TiO2 nanotubes shows not only a direct correlation between the catalytic activity and the particle size but also a steep increase of the response due to the enhancement of the metal-support interaction when the crystal structure of the TiO2 nanotubes is modified by annealing at 450 °C in air.

  14. Atomic structures and electronic properties of 2H-NbSe{sub 2}: The impact of Ti doping

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongping, E-mail: hpli@mail.ujs.edu.cn, E-mail: zcwang@wpi-aimr.tohoku.ac.jp; Chen, Lin; Zhang, Kun; Liang, Jiaqing; Tang, Hua; Li, Changsheng [Institute for Advanced Materials, School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Liu, Xiaojuan; Meng, Jian [State Key Laboratory of Rare Earth Resources Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Wang, Zhongchang, E-mail: hpli@mail.ujs.edu.cn, E-mail: zcwang@wpi-aimr.tohoku.ac.jp [Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2014-09-14

    Layered transition metal dichalcogenides have aroused renewed interest as electronic materials, yet their electronic performances could be modified by chemical doping. Here, we perform a systematic first-principles calculation to investigate the effect of Ti doping on atomic structure and electronic properties of the 2H-NbSe{sub 2}. We consider a total of three possible Ti-doping models and find that both the substitution and intercalated models are chemically preferred with the intercalation model being more favorable than the substitution one. Structural analyses reveal a slight lattice distortion triggered by Ti doping, but the original structure of 2H-NbSe{sub 2} is maintained. We also observe an expansion of c axis in the substituted model, which is attributed to the reduced van der Waals interaction arising from the increased Se-Se bond length. Our calculations also predict that the electron transport properties can be enhanced by the Ti doping, especially for the Ti-intercalated 2H-NbSe{sub 2}, which should be beneficial for the realization of superconductivity. Furthermore, the covalence element is found in the Ti-Se bonds, which is ascribed to the hybridization of Ti 3d and Se 4p orbitals. The findings indicate that doping of transition metals can be regarded as a useful way to tailor electronic states so as to improve electron transport properties of 2H-NbSe{sub 2}.

  15. Atomic-layer chemical-vapor-deposition of TiN thin films on Si(100) and Si(111)

    CERN Document Server

    Kim, Y S; Kim, Y D; Kim, W M

    2000-01-01

    An atomic-layer chemical vapor deposition (AL-CVD) system was used to deposit TiN thin films on Si(100) and Si(111) substrates by cyclic exposures of TiCl sub 4 and NH sub 3. The growth rate was measured by using the number of deposition cycles, and the physical properties were compared with those of TiN films grown by using conventional deposition methods. To investigate the growth mechanism, we suggest a growth model for TiN n order to calculate the growth rate per cycle with a Cerius program. The results of the calculation with the model were compared with the experimental values for the TiN film deposited using the AL-CVD method. The stoichiometry of the TiN film was examined by using Auger electron spectroscopy, and the chlorine and the oxygen impurities were examined. The x-ray diffraction and the transmission electron microscopy results for the TiN film exhibited a strong (200) peak and a randomly oriented columnar microstructure. The electrical resistivity was found to decrease with increasing deposit...

  16. Atomic layer deposition on Pd nanocrystals for forming Pd-TiO2 interface toward enhanced CO oxidation

    Directory of Open Access Journals (Sweden)

    Yu Bai

    2016-06-01

    Full Text Available Pd typically exhibits relatively low catalytic activity in CO oxidation, as CO is apt to be adsorbed on Pd to poison the surface for O2 activation. In this Letter, we report that this limitation can be overcome by integrating Pd with TiO2. The TiO2 was coated on Pd nanocubes with a controllable thickness using atomic layer deposition (ALD method. Given the different work functions of TiO2 and Pd, the electrons in TiO2 semiconductor will flow toward Pd. With the electron density increased on Pd, the adsorption of CO to Pd will be weakened while the oxygen activation can be facilitated. Meanwhile, the interface-confined sites at Pd-TiO2 may further enhance the oxygen activation. As the species adsorption and activation are strongly correlated with electron density, the performance of Pd-TiO2 in CO oxidation turns out to depend on the TiO2 thickness, which determines the number of transferred electrons, within a certain range (<1.8 nm. This work provides a new strategy for enhancing catalytic performance through tailoring charge densities in hybrid catalysts.

  17. Atomic layer deposition on Pd nanocrystals for forming Pd-TiO2 interface toward enhanced CO oxidation

    Institute of Scientific and Technical Information of China (English)

    Yu Bai; Chunlei Wang; Xingyi Zhou; Junling Lu; Yujie Xiong

    2016-01-01

    Pd typically exhibits relatively low catalytic activity in CO oxidation, as CO is apt to be adsorbed on Pd to poison the surface for O2 activation. In this Letter, we report that this limitation can be overcome by integrating Pd with TiO2. The TiO2 was coated on Pd nanocubes with a controllable thickness using atomic layer deposition (ALD) method. Given the different work functions of TiO2 and Pd, the electrons in TiO2 semiconductor will flow toward Pd. With the electron density increased on Pd, the adsorption of CO to Pd will be weakened while the oxygen activation can be facilitated. Meanwhile, the interface-confined sites at Pd-TiO2 may further enhance the oxygen activation. As the species adsorption and activation are strongly correlated with electron density, the performance of Pd-TiO2 in CO oxidation turns out to de-pend on the TiO2 thickness, which determines the number of transferred electrons, within a certain range ( o 1.8 nm). This work provides a new strategy for enhancing catalytic performance through tai-loring charge densities in hybrid catalysts.

  18. Growth and characterization of epitaxial anatase TiO{sub 2}(001) on SrTiO{sub 3}-buffered Si(001) using atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    McDaniel, M.D. [University of Texas at Austin, Department of Chemical Engineering, Austin, TX 78712 (United States); Posadas, A. [University of Texas at Austin, Department of Physics, Austin, TX 78712 (United States); Wang, T. [University of Texas at Austin, Department of Chemical Engineering, Austin, TX 78712 (United States); Demkov, A.A. [University of Texas at Austin, Department of Physics, Austin, TX 78712 (United States); Ekerdt, J.G., E-mail: ekerdt@che.utexas.edu [University of Texas at Austin, Department of Chemical Engineering, Austin, TX 78712 (United States)

    2012-08-31

    Epitaxial anatase titanium dioxide (TiO{sub 2}) films have been grown by atomic layer deposition (ALD) on Si(001) substrates using a strontium titanate (STO) buffer layer grown by molecular beam epitaxy (MBE) to serve as a surface template. The growth of TiO{sub 2} was achieved using titanium isopropoxide and water as the co-reactants at a substrate temperature of 225-250 Degree-Sign C. To preserve the quality of the MBE-grown STO, the samples were transferred in-situ from the MBE chamber to the ALD chamber. After ALD growth, the samples were annealed in-situ at 600 Degree-Sign C in vacuum (10{sup -7} Pa) for 1-2 h. Reflection high-energy electron diffraction was performed during the MBE growth of STO on Si(001), as well as after deposition of TiO{sub 2} by ALD. The ALD films were shown to be highly ordered with the substrate. At least four unit cells of STO must be present to create a stable template on the Si(001) substrate for epitaxial anatase TiO{sub 2} growth. X-ray diffraction revealed that the TiO{sub 2} films were anatase with only the (004) reflection present at 2{theta} = 38.2 Degree-Sign , indicating that the c-axis is slightly reduced from that of anatase powder (2{theta} = 37.9 Degree-Sign ). Anatase TiO{sub 2} films up to 100 nm thick have been grown that remain highly ordered in the (001) direction on STO-buffered Si(001) substrates. - Highlights: Black-Right-Pointing-Pointer Epitaxial anatase films are grown by atomic layer deposition (ALD) on Si(001). Black-Right-Pointing-Pointer Four unit cells of SrTiO{sub 3} on silicon create a stable template for ALD. Black-Right-Pointing-Pointer TiO{sub 2} thin films have a compressed c-axis and an expanded a-axis. Black-Right-Pointing-Pointer Up to 100 nm thick TiO{sub 2} films remain highly ordered in the (001) direction.

  19. Atomic-scale segregation behavior of Sn/Ti and O atΣ3[11̄0](111) grain boundary in niobium

    Institute of Scientific and Technical Information of China (English)

    Zenghui Liu; Jiaxiang Shang

    2016-01-01

    First-principle calculation was performed to illustrate the atomic arrangement and segregation behavior of Sn/Ti and O in Σ3 [11¯ 0] (111) grain boundary, and the interaction of oxygen interstitials with Sn/Ti atoms on the grain boundary was studied. The analyses on the segregation energies and geometric positions, and the electron densities show that Sn, Ti and O atoms segregate at the Σ3 grain boundary. And the preferred segregation sites of the impurities at Σ3 [11¯ 0] (111) were determined. When Sn seg-regates at grain boundary plane, the O atom prefers to the bulk-like site and shows no segregation tendency at grain boundary, whereas the segregated Ti atom can slightly enhance oxygen segregation at the grain boundary.

  20. Preparation of La-Ti Composite Oxide Nanocrystal and Examination of Their Surface Topography with Atomic Force Microscope

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    With sol-gel method, nanometer La-Ti composite oxide was successfully prepared at a low temperature (750~800℃) using polyethylene glycol as dispersant. By means of atomic force microscope, the surface pattern, particle size distribution, and specific surface area were studied. The compound particle surface appears as a smooth sheet, the mean size of the compound is 25.38 nm. On the specific surface, the particle erects at a height of 4.69 nm. The surface area is 58.90 nm2. The La-Ti composite oxide nanocrystal prefers to narrow and even particle size distribution and the homogeneity of surface topography.

  1. Atom probe tomography of a Ti-Si-Al-C-N coating grown on a cemented carbide substrate.

    Science.gov (United States)

    Thuvander, M; Östberg, G; Ahlgren, M; Falk, L K L

    2015-12-01

    The elemental distribution within a Ti-Si-Al-C-N coating grown by physical vapour deposition on a Cr-doped WC-Co cemented carbide substrate has been investigated by atom probe tomography. Special attention was paid to the coating/substrate interface region. The results indicated a diffusion of substrate binder phase elements into the Ti-N adhesion layer. The composition of this layer, and the Ti-Al-N interlayer present between the adhesion layer and the main Ti-Si-Al-C-N layer, appeared to be sub-stoichiometric. The analysis of the interlayer showed the presence of internal surfaces, possibly grain boundaries, depleted in Al. The composition of the main Ti-Al-Si-C-N layer varied periodically in the growth direction; layers enriched in Ti appeared with a periodicity of around 30 nm. Laser pulsing resulted in a good mass resolution that made it possible to distinguish between N(+) and Si(2+) at 14 Da.

  2. Adsorption of atomic oxygen, electron structure and elastic moduli of TiC(0 0 1) surface during its laser reconstruction: Ab initio study

    Energy Technology Data Exchange (ETDEWEB)

    Ilyasov, V.V., E-mail: viily@mail.ru; Pham, Khang D., E-mail: dinhkhang307@gmail.com; Holodova, O.M.; Ershov, I.V., E-mail: thijd@mail.ru

    2015-10-01

    We have performed ab initio simulation of oxygen atom adsorption on TiC(0 0 1) laser-reconstructed surface. Relaxed atomic structures of the O/Ti{sub x}C{sub y}(0 0 1) surface observed upon thermal impact have been studied. DFT calculations of their thermodynamic, electronic, and elastic properties have been carried out. For the first time we have established the bond length and adsorption energy for various reconstructions of the O/Ti{sub x}C{sub y}(0 0 1) surface atomic structure. We have examined the effects of the oxygen adatom upon the band and electron spectra of the O/TiC(0 0 1) surface in its various reconstructions. For the first time we have established a correlation between the energy level of flat bands (−5.4 eV and −5.8 eV) responsible for the doublet of singular peaks of partial densities of oxygen 2p electrons, and the adsorption energy of oxygen atom in non-stoichiometric O/TiC{sub y}(0 0 1) systems. Effective charges of titanium and carbon atoms surrounding the oxygen adatom in various reconstructions have been identified. We have established charge transfer from titanium atom to oxygen and carbon atoms determined by the reconstruction of local atomic and electron structures which correlate with atomic electronegativity values and chemisorption processes. Potential mechanisms for laser nanostructuring of titanium carbide surface have been suggested.

  3. Electronic properties of atomic layer deposition films, anatase and rutile TiO2 studied by resonant photoemission spectroscopy

    Science.gov (United States)

    Das, C.; Richter, M.; Tallarida, M.; Schmeisser, D.

    2016-07-01

    The TiO2 films are prepared by atomic layer deposition (ALD) method using titanium isopropoxide precursors at 250 °C and analyzed using resonant photoemission spectroscopy (resPES). We report on the Ti2p and O1s core levels, on the valence band (VB) spectra and x-ray absorption spectroscopy (XAS) data, and on the resonant photoelectron spectroscopy (resPES) profiles at the O1s and the Ti3p absorption edges. We determine the elemental abundance, the position of the VB maxima, the partial density of states (PDOS) in the VB and in the conduction band (CB) and collect these data in a band scheme. In addition, we analyze the band-gap states as well as the intrinsic states due to polarons and charge-transfer excitations. These states are found to cause multiple Auger decay processes upon resonant excitation. We identify several of these processes and determine their relative contribution to the Auger signal quantitatively. As our resPES data allow a quantitative analysis of these defect states, we determine the relative abundance of the PDOS in the VB and in CB and also the charge neutrality level. The anatase and rutile polymorphs of TiO2 are analyzed in the same way as the TiO2 ALD layer. The electronic properties of the TiO2 ALD layer are compared with the anatase and rutile polymorphs of TiO2. In our comparative study, we find that ALD has its own characteristic electronic structure that is distinct from that of anatase and rutile. However, many details of the electronic structure are comparable and we benefit from our spectroscopic data and our careful analysis to find these differences. These can be attributed to a stronger hybridization of the O2p and Ti3d4s states for the ALD films when compared to the anatase and rutile polymorphs.

  4. Interpretation of atom probe tomography data for the intermetallic TiAl+Nb by means of field evaporation simulation

    KAUST Repository

    Boll, Torben

    2013-01-01

    In this paper simulations of the field evaporation process during field ion microscopy (FIM) and atom probe tomography (APT) are presented and compared with experimental data. The Müller-Schottky-model [1] was extended to include the local atomic arrangement on the evaporation process of atoms. This arrangement was described by the sum of the next-neighbor-binding-energies, which differ for an atom of type A, depending on how many A-A, B-B or A-B bonds are present. Thus simulations of APT-data of intermetallic phases become feasible. In this study simulations of L10-TiAl with additions of Nb are compared with experimental data. Certain artifacts, which appear for experimental data are treated as well. © 2012 Elsevier B.V.

  5. Plasma-enhanced growth, composition, and refractive index of silicon oxy-nitride films

    DEFF Research Database (Denmark)

    Mattsson, Kent Erik

    1995-01-01

    Secondary ion mass spectrometry and refractive index measurements have been carried out on silicon oxy-nitride produced by plasma-enhanced chemical vapor deposition (PECVD). Nitrous oxide and ammonia were added to a constant flow of 2% silane in nitrogen, to produce oxy-nitride films with atomic...... nitrogen concentrations between 2 and 10 at. %. A simple atomic valence model is found to describe both the measured atomic concentrations and published material compositions for silicon oxy-nitride produced by PECVD. A relation between the Si–N bond concentration and the refractive index is found....... This relation suggest that the refractive index of oxy-nitride with a low nitrogen concentration is determined by the material density. It is suggested that the relative oxygen concentration in the gas flow is the major deposition characterization parameter, and that water vapor is the predominant reaction by...

  6. Highly photocatalytic TiO2 interconnected porous powder fabricated by sponge-templated atomic layer deposition

    Science.gov (United States)

    Pan, Shengqiang; Zhao, Yuting; Huang, Gaoshan; Wang, Jiao; Baunack, Stefan; Gemming, Thomas; Li, Menglin; Zheng, Lirong; Schmidt, Oliver G.; Mei, Yongfeng

    2015-09-01

    A titanium dioxide (TiO2) interconnected porous structure has been fabricated by means of atomic layer deposition of TiO2 onto a reticular sponge template. The obtained freestanding TiO2 with large surface area can be easily taken out of the water to solve a complex separation procedure. A compact and conformal nanocoating was evidenced by morphologic characterization. A phase transition, as well as production of oxygen vacancies with increasing annealing temperature, was detected by x-ray diffraction and x-ray photoelectron spectroscopy, respectively. The photocatalytic experimental results demonstrated that the powder with appropriate annealing treatment possessed excellent photocatalytic ability due to the co-action of high surface area, oxygen vacancies and the optimal crystal structure.

  7. TiO{sub 2} anatase films obtained by direct liquid injection atomic layer deposition at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Avril, L., E-mail: ludovic.avril@u-bourgogne.fr [Laboratoire Interdisciplinaire Carnot de Bourgogne (ICB), UMR 6303 CNRS-Université de Bourgogne, 9 Av. A. Savary, BP 47 870, F-21078 Dijon Cedex (France); Reymond-Laruinaz, S. [Laboratoire Interdisciplinaire Carnot de Bourgogne (ICB), UMR 6303 CNRS-Université de Bourgogne, 9 Av. A. Savary, BP 47 870, F-21078 Dijon Cedex (France); Decams, J.M. [Annealsys, rue de la Vieille Poste, 34055 Montpellier Cedex 1 (France); Bruyère, S.; Potin, V.; Lucas, M.C. Marco de; Imhoff, L. [Laboratoire Interdisciplinaire Carnot de Bourgogne (ICB), UMR 6303 CNRS-Université de Bourgogne, 9 Av. A. Savary, BP 47 870, F-21078 Dijon Cedex (France)

    2014-01-01

    TiO{sub 2} thin films were grown by direct liquid injection atomic layer deposition (DLI-ALD) with infrared rapid thermal heating using titanium tetraisopropoxide and water as precursors. This titanium tetraisopropoxide/water process exhibited a growth rate of 0.018 nm/cycle in a self-limited ALD growth mode at 280 °C. Scanning electron microscopy and atomic force microscopy analyses have shown a smooth surface with a low roughness. XPS results demonstrated that the films were pure and close to the TiO{sub 2} stoichiometric composition in depth. Raman spectroscopy revealed that the films were crystallized to the anatase structure in the as-deposited state at low temperature without necessity of high temperature annealing. Results obtained demonstrate that the liquid injection ALD is an efficient method of elaborating titanium oxide films using titanium tetraisopropoxide as precursor.

  8. Effect of atomic size on undercoolability of binary solid solution alloy liquids with Zr, Ti, and Hf using electrostatic levitation.

    Science.gov (United States)

    Jeon, S; Kang, D-H; Lee, Y H; Lee, S; Lee, G W

    2016-11-07

    We investigate the relationship between the excess volume and undercoolability of Zr-Ti and Zr-Hf alloy liquids by using electrostatic levitation. Unlike in the case of Zr-Hf alloy liquids in which sizes of the constituent atoms are matched, a remarkable increase of undercoolability and negative excess volumes are observed in Zr-Ti alloy liquids as a function of their compositional ratios. In this work, size mismatch entropies for the liquids were obtained by calculating their hard sphere diameters, number densities, and packing fractions. We also show that the size mismatch entropy, which arises from the differences in atomic sizes of the constituent elements, plays an important role in determining the stabilities of metallic liquids.

  9. Structural properties of Al and TiAl3 metallic glasses — An embedded atom method study

    Science.gov (United States)

    Tahiri, M.; Trady, S.; Hasnaoui, A.; Mazroui, M.; Saadouni, K.; Sbiaai, K.

    2016-06-01

    In this paper, we investigated the structural properties of metallic glasses (MGs). We emphasized our study on monatomic Al and binary TiAl3 systems. The calculations are performed by using the molecular dynamics (MD) simulation based on semi-empirical many-body potentials derived from the embedded atom method. The structure is analyzed using the radial distribution function (RDF), the common neighbor analysis (CNA) and the coordination numbers (CNs). Our results demonstrated that it is possible to form MGs in both systems upon fast cooling from the liquid state. This is confirmed by the fact that the system energy and/or volume during the cooling stage decrease continuously with a slight change and by atomic scale analysis using the RDF, CNA and CN analyzing techniques. Furthermore, this specific study shows that under the same conditions, the icosahedral structures appeared in TiAl3 are more abundant than in pure Al. Implications of these findings are discussed.

  10. Nanoindentation and atomic force microscopy measurements on reactively sputtered TiN coatings

    Indian Academy of Sciences (India)

    Harish C Barshilia; K S Rajam

    2004-02-01

    Titanium nitride (TiN) coatings were deposited by d.c. reactive magnetron sputtering process. The films were deposited on silicon (111) substrates at various process conditions, e.g. substrate bias voltage (B) and nitrogen partial pressure. Mechanical properties of the coatings were investigated by a nanoindentation technique. Force vs displacement curves generated during loading and unloading of a Berkovich diamond indenter were used to determine the hardness () and Young’s modulus () of the films. Detailed investigations on the role of substrate bias and nitrogen partial pressure on the mechanical properties of the coatings are presented in this paper. Considerable improvement in the hardness was observed when negative bias voltage was increased from 100–250 V. Films deposited at |B| = 250 V exhibited hardness as high as 3300 kg/mm2. This increase in hardness has been attributed to ion bombardment during the deposition. The ion bombardment considerably affects the microstructure of the coatings. Atomic force microscopy (AFM) of the coatings revealed fine-grained morphology for the films prepared at higher substrate bias voltage. The hardness of the coatings was found to increase with a decrease in nitrogen partial pressure.

  11. Edge-to-edge interfaces in Ti-Al modeled with the embedded atom method

    Science.gov (United States)

    Reynolds, W. T.; Farkas, D.

    2006-03-01

    The atomistic structure and energies of high-index interphase boundaries are explored using a combination of molecular statics and dynamics simulations with embedded atom potentials. We investigate planar boundaries between the α2 and γ phases in the Ti-Al system. The class of boundaries considered has a high-index boundary orientation; the orientation relationship between the α2 and γ phases also is high index, and a set of planes from each phase meet edge to edge at the boundary plane. For the particular case of a boundary that is commensurate in one direction and coincides with a moiré plane given by the so-called “Δ g” diffraction condition, the boundary is not structurally singular, but it is energetically stable and does not appear to dissociate into other low-energy configurations. Misfit compensating defects are not observed; misfit in directions other than the commensurate one appears to be distributed uniformly. The boundary energy is evaluated as a function of the orientation of the boundary plane, and the edge-to-edge (moiré) boundary is found to lie in an energy cusp.

  12. Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO{sub 2}/TiN devices

    Energy Technology Data Exchange (ETDEWEB)

    Matveyev, Yu.; Zenkevich, A. [Moscow Institute of Physics and Technology, 141700 Moscow Region (Russian Federation); NRNU “Moscow Engineering Physics Institute”, 115409 Moscow (Russian Federation); Egorov, K.; Markeev, A. [Moscow Institute of Physics and Technology, 141700 Moscow Region (Russian Federation)

    2015-01-28

    Recently proposed novel neural network hardware designs imply the use of memristors as electronic synapses in 3D cross-bar architecture. Atomic layer deposition (ALD) is the most feasible technique to fabricate such arrays. In this work, we present the results of the detailed investigation of the gradual resistive switching (memristive) effect in nanometer thick fully ALD grown TiN/HfO{sub 2}/TiN stacks. The modelling of the I-V curves confirms interface limited trap-assisted-tunneling mechanism along the oxygen vacancies in HfO{sub 2} in all conduction states. The resistivity of the stack is found to critically depend upon the distance from the interface to the first trap in HfO{sub 2}. The memristive properties of ALD grown TiN/HfO{sub 2}/TiN devices are correlated with the demonstrated neuromorphic functionalities, such as long-term potentiation/depression and spike-timing dependent plasticity, thus indicating their potential as electronic synapses in neuromorphic hardware.

  13. Atomic Force Microscopy Studies on the Chemical Treatment of Nanocrystalline Porous TiO2 Films

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    AFM has been utilized to study the surface topography and the local conductivity of nanocrystalline TiO2 films. Improving the local conductivity by Ti(iso-C3H7O)4 treatment is characterized by quantitative analysis of the simultaneous current image. The mechanism of Ti(iso C3H7O)4 treatment is discussed.

  14. Reactivity of transition metal atoms supported or not on TiO2(110) toward CO and H adsorption

    KAUST Repository

    Helali, Zeineb

    2015-04-01

    Following our strategy to analyze the metal–support interaction, we present periodic DFT calculations for adsorption of metal atoms on a perfect rutile TiO2(110) surface (at low coverage, θ = 1/3) to investigate the interaction of an individual metal atom, M, with TiO2 and its consequence on the coadsorption of H and CO over M/TiO2. M under investigation varies in a systematic way from K to Zn. It is found that the presence of the support decreases or increases the strength of M–H or M–CO interaction according to the nature of M. The site of the adsorption for H and the formation of HCO/M also depend on M. From the left- to the right-hand side of the period, C and O both interact while O progressively detaches from M. On the contrary, for M = Fe–Cu, CO dissociation is more likely to happen. For CO and H coadsorption, two extreme cases emerge: For Ni, the hydrogen adsorbed should easily move on the support and CO dissociation is more likely. For Ti or Sc, H is easily coadsorbed with CO on the metal and CO hydrogenation could be the initial step. © 2015, Springer-Verlag Berlin Heidelberg.

  15. Atomic layer deposition of environmentally benign SnTiO{sub x} as a potential ferroelectric material

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Siliang; Selvaraj, Sathees Kannan [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Choi, Yoon-Young; Hong, Seungbum [Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439 (United States); Nakhmanson, Serge M. [Department of Materials Science and Engineering, Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269 (United States); Takoudis, Christos G., E-mail: takoudis@uic.edu [Department of Bioengineering and Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

    2016-01-15

    Inspired by the need to discover environmentally friendly, lead-free ferroelectric materials, here the authors report the atomic layer deposition of tin titanate (SnTiO{sub x}) aiming to obtain the theoretically predicted perovskite structure that possesses ferroelectricity. In order to establish the growth conditions and probe the film structure and ferroelectric behavior, the authors grew SnTiO{sub x} films on the commonly used Si(100) substrate. Thin films of SnTiO{sub x} have been successfully grown at a deposition temperature of 200 °C, with a Sn/Ti atomic layer deposition (ALD) cycle ratio of 2:3 and postdeposition heat treatments under different conditions. X-ray photoelectron spectroscopy revealed excellent composition tunability of ALD. X-ray diffraction spectra suggested anatase phase for all films annealed at 650 and 350 °C, with peak positions shifted toward lower 2-theta angles indicating enlarged unit cell volume. The film annealed in O{sub 2} at 350 °C exhibited piezoresponse amplitude and phase hysteresis loops, indicative of the existence of switchable polarization.

  16. Correction: Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films

    Science.gov (United States)

    Cordova, Isvar A.; Peng, Qing; Ferrall, Isa L.; Rieth, Adam J.; Hoertz, Paul G.; Glass, Jeffrey T.

    2015-07-01

    Correction for `Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films' by Isvar A. Cordova, et al., Nanoscale, 2015, 7, 8584-8592.

  17. Advancement of Compositional and Microstructural Design of Intermetallic γ-TiAl Based Alloys Determined by Atom Probe Tomography

    Directory of Open Access Journals (Sweden)

    Thomas Klein

    2016-09-01

    Full Text Available Advanced intermetallic alloys based on the γ-TiAl phase have become widely regarded as most promising candidates to replace heavier Ni-base superalloys as materials for high-temperature structural components, due to their facilitating properties of high creep and oxidation resistance in combination with a low density. Particularly, recently developed alloying concepts based on a β-solidification pathway, such as the so-called TNM alloy, which are already incorporated in aircraft engines, have emerged offering the advantage of being processible using near-conventional methods and the option to attain balanced mechanical properties via subsequent heat-treatment. Development trends for the improvement of alloying concepts, especially dealing with issues regarding alloying element distribution, nano-scale phase characterization, phase stability, and phase formation mechanisms demand the utilization of high-resolution techniques, mainly due to the multi-phase nature of advanced TiAl alloys. Atom probe tomography (APT offers unique possibilities of characterizing chemical compositions with a high spatial resolution and has, therefore, been widely used in recent years with the aim of understanding the materials constitution and appearing basic phenomena on the atomic scale and applying these findings to alloy development. This review, thus, aims at summarizing scientific works regarding the application of atom probe tomography towards the understanding and further development of intermetallic TiAl alloys.

  18. Development of inverted organic solar cells with TiO₂ interface layer by using low-temperature atomic layer deposition.

    Science.gov (United States)

    Lin, Zhenhua; Jiang, Changyun; Zhu, Chunxiang; Zhang, Jie

    2013-02-01

    Organic solar cells (OSCs) with inverted structure have attracted much attention in recent years because of their improved device air stability due to the use of stable materials for electrodes and interface layers. In this work, TiO(2) films, fabricated using low temperature (e.g., 130-170 °C) atomic layer deposition (ALD) on ITO substrates, are used as electron selective interface layers to investigate inverted OSCs. It is found that though the as-deposited TiO(2) films are high resistive due to the presence of oxygen defects, the defects can be significantly reduced by light soaking. PV cells with 15-nm-thick amorphous-TiO(2) layers fabricated at low temperature show better performance than those with poly crystal TiO(2) with same thickness deposited at 250 °C. The low temperature ALD-grown TiO(2) films are dense, stable and robust with capability of conformal coating on nanostructural surfaces, showing a promising interface layer for achieving air-stable plastic OSCs with roll-to-roll mass production potential.

  19. Direct formation of anatase TiO2 nanoparticles on carbon nanotubes by atomic layer deposition and their photocatalytic properties

    Science.gov (United States)

    Huang, Sheng-Hsin; Liao, Shih-Yun; Wang, Chih-Chieh; Kei, Chi-Chung; Gan, Jon-Yiew; Perng, Tsong-Pyng

    2016-10-01

    TiO2 with different morphology was deposited on acid-treated multi-walled carbon nanotubes (CNTs) by atomic layer deposition at 100 °C-300 °C to form a TiO2@CNT structure. The TiO2 fabricated at 100 °C was an amorphous film, but became crystalline anatase nanoparticles when fabricated at 200 °C and 300 °C. The saturation growth rates of TiO2 nanoparticles at 300 °C were about 1.5 and 0.4 Å/cycle for substrate-enhanced growth and linear growth processes, respectively. It was found that the rate constants for methylene blue degradation by the TiO2@CNT structure formed at 300 °C were more suitable to fit with second-order reaction. The size of 9 nm exhibited the best degradation efficiency, because of the high specific area and appropriate diffusion length for the electrons and holes.

  20. Influence of Different Defects in Vertically Aligned Carbon Nanotubes on TiO2 Nanoparticle Formation through Atomic Layer Deposition.

    Science.gov (United States)

    Acauan, Luiz; Dias, Anna C; Pereira, Marcelo B; Horowitz, Flavio; Bergmann, Carlos P

    2016-06-29

    The chemical inertness of carbon nanotubes (CNT) requires some degree of "defect engineering" for controlled deposition of metal oxides through atomic layer deposition (ALD). The type, quantity, and distribution of such defects rules the deposition rate and defines the growth behavior. In this work, we employed ALD to grow titanium oxide (TiO2) on vertically aligned carbon nanotubes (VACNT). The effects of nitrogen doping and oxygen plasma pretreatment of the CNT on the morphology and total amount of TiO2 were systematically studied using transmission electron microscopy, Raman spectroscopy, and thermogravimetric analysis. The induced chemical changes for each functionalization route were identified by X-ray photoelectron and Raman spectroscopies. The TiO2 mass fraction deposited with the same number of cycles for the pristine CNT, nitrogen-doped CNT, and plasma-treated CNT were 8, 47, and 80%, respectively. We demonstrate that TiO2 nucleation is dependent mainly on surface incorporation of heteroatoms and their distribution rather than structural defects that govern the growth behavior. Therefore, selecting the best way to functionalize CNT will allow us to tailor TiO2 distribution and hence fabricate complex heterostructures.

  1. Catalyst Architecture for Stable Single Atom Dispersion Enables Site-Specific Spectroscopic and Reactivity Measurements of CO Adsorbed to Pt Atoms, Oxidized Pt Clusters, and Metallic Pt Clusters on TiO2.

    Science.gov (United States)

    DeRita, Leo; Dai, Sheng; Lopez-Zepeda, Kimberly; Pham, Nicholas; Graham, George W; Pan, Xiaoqing; Christopher, Phillip

    2017-10-11

    Oxide-supported precious metal nanoparticles are widely used industrial catalysts. Due to expense and rarity, developing synthetic protocols that reduce precious metal nanoparticle size and stabilize dispersed species is essential. Supported atomically dispersed, single precious metal atoms represent the most efficient metal utilization geometry, although debate regarding the catalytic activity of supported single precious atom species has arisen from difficulty in synthesizing homogeneous and stable single atom dispersions, and a lack of site-specific characterization approaches. We propose a catalyst architecture and characterization approach to overcome these limitations, by depositing ∼1 precious metal atom per support particle and characterizing structures by correlating scanning transmission electron microscopy imaging and CO probe molecule infrared spectroscopy. This is demonstrated for Pt supported on anatase TiO2. In these structures, isolated Pt atoms, Ptiso, remain stable through various conditions, and spectroscopic evidence suggests Ptiso species exist in homogeneous local environments. Comparing Ptiso to ∼1 nm preoxidized (Ptox) and prereduced (Ptmetal) Pt clusters on TiO2, we identify unique spectroscopic signatures of CO bound to each site and find CO adsorption energy is ordered: Ptiso ≪ Ptmetal atoms bonded to TiO2 and that Ptiso exhibits optimal reactivity because every atom is exposed for catalysis and forms an interfacial site with TiO2. This approach should be generally useful for studying the behavior of supported precious metal atoms.

  2. Atomic layer deposition of amorphous oxygen-deficient TiO2-x on carbon nanotubes as cathode materials for lithium-air batteries

    Science.gov (United States)

    Yang, Jingbo; Ma, Dingtao; Li, Yongliang; Zhang, Peixin; Mi, Hongwei; Deng, Libo; Sun, Lingna; Ren, Xiangzhong

    2017-08-01

    The amorphous oxygen-deficient TiO2-x thin layer coated carbon nanotubes (CNTs) are synthesized by atomic layer deposition and employed as cathode materials for lithium-air battery. The cathode demonstrates high electrocatalytic activity toward electrode reactions, resulting from the introduction of oxygen-deficient TiO2-x into the nanocomposites. It is found that the intrinsically isotropic nature of amorphous TiO2 which a certain amount of Ti3.5+ and Ti3+ can improve the catalytic activity. Consequently, the battery with the corresponded CNT@TiO2-x cathode shows high discharge/charge capacities and good cycling performance, which the cyclic retention of more than 90 cycles are achieved, while with the pristine CNTs only 50 cycles are obtained. This study provides an approach to fabricate cathode materials for lithium-air battery and moreover clarifies the influence of oxygen vacancies of TiO2 on the electrochemical performance.

  3. Epitaxial TiO 2/SnO 2 core-shell heterostructure by atomic layer deposition

    KAUST Repository

    Nie, Anmin

    2012-01-01

    Taking TiO 2/SnO 2 core-shell nanowires (NWs) as a model system, we systematically investigate the structure and the morphological evolution of this heterostructure synthesized by atomic layer deposition/epitaxy (ALD/ALE). All characterizations, by X-ray diffraction, high-resolution transmission electron microscopy, selected area electron diffraction and Raman spectra, reveal that single crystalline rutile TiO 2 shells can be epitaxially grown on SnO 2 NWs with an atomically sharp interface at low temperature (250 °C). The growth behavior of the TiO 2 shells highly depends on the surface orientations and the geometrical shape of the core SnO 2 NW cross-section. Atomically smooth surfaces are found for growth on the {110} surface. Rough surfaces develop on {100} surfaces due to (100) - (1 × 3) reconstruction, by introducing steps in the [010] direction as a continuation of {110} facets. Lattice mismatch induces superlattice structures in the TiO 2 shell and misfit dislocations along the interface. Conformal epitaxial growth has been observed for SnO 2 NW cores with an octagonal cross-section ({100} and {110} surfaces). However, for a rectangular core ({101} and {010} surfaces), the shell also derives an octagonal shape from the epitaxial growth, which was explained by a proposed model based on ALD kinetics. The surface steps and defects induced by the lattice mismatch likely lead to improved photoluminescence (PL) performance for the yellow emission. Compared to the pure SnO 2 NWs, the PL spectrum of the core-shell nanostructures exhibits a stronger emission peak, which suggests potential applications in optoelectronics. © The Royal Society of Chemistry 2012.

  4. Ab initio atomic thermodynamics investigation on oxygen defects in the anatase TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Zhijun [College of Science, University of Shanghai for Science and Technology, Shanghai 200093 (China); Liu, Tingyu, E-mail: liutyyxj@163.com [College of Science, University of Shanghai for Science and Technology, Shanghai 200093 (China); Yang, Chenxing; Gan, Haixiu [College of Science, University of Shanghai for Science and Technology, Shanghai 200093 (China); Chen, Jianyu [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Zhang, Feiwu [Nanochemistry Research Institute, Curtin University, GPO Box U1987, Perth, WA 6845 (Australia)

    2013-01-05

    Highlights: Black-Right-Pointing-Pointer Three typical oxygen defects under the different annealing conditions have been studied. Black-Right-Pointing-Pointer The oxygen vacancy is easier to form at the surface than in the bulk. Black-Right-Pointing-Pointer The adsorption of O{sub 2} whose orientation is parallel to the surface should be more favorable. Black-Right-Pointing-Pointer The reduction reaction may firstly undertake at the surface during the annealing treatment. Black-Right-Pointing-Pointer The interstitial oxygen has important contribution to lead to the reduction of the band gap. - Abstract: In the framework of the ab initio atomic thermodynamics, the preliminary analysis of the oxygen defects in anatase TiO{sub 2} has been done by investigating the influence of the annealing treatment under representative conditions on three typical oxygen defects, that is, oxygen vacancy, oxygen adsorption and oxygen interstitial. Our results in this study agree well with the related experimental results. The molecular species of the adsorbed O{sub 2} is subject to the ratio of the number of the O{sub 2} to that of the vacancy, as well as to the initial orientation of O{sub 2} relative to the surface (101). Whatever the annealing condition is, the oxygen vacancy is easier to form at the surface than in the bulk indicating that the reduction reaction may firstly undertake at the surface during the annealing treatment, which is consistent with the phase transformation experiments. The molecular ion, peroxide species, caused by the interstitial oxygen has important contribution to the top of the valence band and lead to the reduction of the band gap.

  5. Atoms

    Institute of Scientific and Technical Information of China (English)

    刘洪毓

    2007-01-01

    Atoms(原子)are all around us.They are something like the bricks (砖块)of which everything is made. The size of an atom is very,very small.In just one grain of salt are held millions of atoms. Atoms are very important.The way one object acts depends on what

  6. Incorporation of La in epitaxial SrTiO3 thin films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates

    Science.gov (United States)

    McDaniel, Martin D.; Posadas, Agham; Ngo, Thong Q.; Karako, Christine M.; Bruley, John; Frank, Martin M.; Narayanan, Vijay; Demkov, Alexander A.; Ekerdt, John G.

    2014-06-01

    Strontium titanate, SrTiO3 (STO), thin films incorporated with lanthanum are grown on Si (001) substrates at a thickness range of 5-25 nm. Atomic layer deposition (ALD) is used to grow the LaxSr1-xTiO3 (La:STO) films after buffering the Si (001) substrate with four-unit-cells of STO deposited by molecular beam epitaxy. The crystalline structure and orientation of the La:STO films are confirmed via reflection high-energy electron diffraction, X-ray diffraction, and cross-sectional transmission electron microscopy. The low temperature ALD growth (˜225 °C) and post-deposition annealing at 550 °C for 5 min maintains an abrupt interface between Si (001) and the crystalline oxide. Higher annealing temperatures (650 °C) show more complete La activation with film resistivities of ˜2.0 × 10-2 Ω cm for 20-nm-thick La:STO (x ˜ 0.15); however, the STO-Si interface is slightly degraded due to the increased annealing temperature. To demonstrate the selective incorporation of lanthanum by ALD, a layered heterostructure is grown with an undoped STO layer sandwiched between two conductive La:STO layers. Based on this work, an epitaxial oxide stack centered on La:STO and BaTiO3 integrated with Si is envisioned as a material candidate for a ferroelectric field-effect transistor.

  7. Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta{sub 2}O{sub 5} Metal-Insulator-Metal capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Lukosius, M., E-mail: lukosius@ihp-microelectronics.com [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Kaynak, C. Baristiran; Kubotsch, S. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Blomberg, T. [ASM Microchemistry Ltd., Vaeinoe Auerin katu 12 A, 00560 Helsinki (Finland); Ruhl, G. [Infineon Technologies AG, Wernerwerkstr. 2, 93049 Regensburg (Germany); Wenger, Ch. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany)

    2012-05-01

    Atomic Vapor Deposition and Atomic Layer Deposition techniques were applied for the depositions of Ta{sub 2}O{sub 5}, Ti-Ta-O, Sr-Ta-O and Nb-Ta-O oxide films for Metal-Insulator-Metal (MIM) capacitors used in back-end of line for Radio Frequency applications. Structural and electrical properties were studied. Films, deposited on the TiN bottom electrodes, in the temperature range of 225-400 Degree-Sign C, were amorphous, whereas the post deposition annealing at 600 Degree-Sign C resulted in the crystallization of Nb-Ta-O films. Electrical properties of MIM structures, investigated after sputtering Au top electrodes, revealed that the main characteristics were different for each oxide. On one hand, Ti-Ta-O based MIM capacitors possessed the highest dielectric constant (50), but the leakages currents were also the highest ({approx} 10{sup -5} A/cm{sup 2} at - 2 V). On the other hand, Sr-Ta-O showed the lowest leakage current densities ({approx} 10{sup -9} A/cm{sup 2} at - 2 V) as well as the smallest capacitance-voltage nonlinearity coefficients (40 ppm/V{sup 2}), but the dielectric constant was the smallest (20). The highest nonlinearity coefficients (290 ppm/V{sup 2}) were observed for Nb-Ta-O based MIM capacitors, although relatively high dielectric constant (40) and low leakage currents ({approx} 10{sup -7} A/cm{sup 2} at - 2 V) were measured. Temperature dependent leakage-voltage measurements revealed that only Sr-Ta-O showed no dependence of leakage current as a function of the measurement temperature.

  8. Effect of plasma CVD operating temperature on nanomechanical properties of TiC nanostructured coating investigated by atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Shanaghi, Ali, E-mail: alishanaghi@gmail.com [Materials Engineering Department, Faculty of Engineering, Malayer University, P.O. Box: 95863-65719, Malayer (Iran, Islamic Republic of); Rouhaghdam, Ali Reza Sabour, E-mail: sabour01@modares.ac.ir [Surface Engineering Laboratory, Materials Engineering Department, Faculty of Engineering, Tarbiat Modares University, P.O. Box: 14115-143, Tehran (Iran, Islamic Republic of); Ahangarani, Shahrokh, E-mail: sh.ahangarani@gmail.com [Advanced Materials and Renewable Energies Department, Iranian Research Organization for Science and Technology, P.O. Box 15815-3538, Tehran (Iran, Islamic Republic of); Chu, Paul K., E-mail: paul.chu@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)

    2012-09-15

    Highlights: ► The TiC{sub x} nanostructure coatings have been deposited by PACVD method. ► Dominant mechanism of growth structure at 490 °C is island-layer type. ► TiC{sub x} nanostructure coating applied at 490 °C, exhibits lowest friction coefficient. ► Young's moduli are 289.9, 400 and 187.6 GPa for 470, 490 and 510 °C, respectively. ► This higher elastic modulus and higher hardness of nanocoating obtain at 490 °C. -- Abstract: The structure, composition, and mechanical properties of nanostructured titanium carbide (TiC) coatings deposited on H{sub 11} hot-working tool steel by pulsed-DC plasma assisted chemical vapor deposition at three different temperatures are investigated. Nanoindentation and nanoscratch tests are carried out by atomic force microscopy to determine the mechanical properties such as hardness, elastic modulus, surface roughness, and friction coefficient. The nanostructured TiC coatings prepared at 490 °C exhibit lower friction coefficient (0.23) than the ones deposited at 470 and 510 °C. Increasing the deposition temperature reduces the Young's modulus and hardness. The overall superior mechanical properties such as higher hardness and lower friction coefficient render the coatings deposited at 490 °C suitable for wear resistant applications.

  9. Atomic force microscopy surface analysis of layered perovskite La2Ti2O7 particles grown by molten flux method

    Science.gov (United States)

    Orum, Aslihan; Takatori, Kazumasa; Hori, Shigeo; Ikeda, Tomiko; Yoshimura, Masamichi; Tani, Toshihiko

    2016-08-01

    Rectangular platelike particles of La2Ti2O7, a layered perovskite, were synthesized in KCl, NaCl, and LiCl by the molten flux method. The formation mechanism of the equilibrium shape in these alkali chloride fluxes was discussed in terms of the surface and interfacial energies of crystallographic planes. The atomic force microscopy (AFM) observations revealed that the developed plane of the platelike particles is along the interlayers in the {110}-type layered crystal structure, and is considered to represent the lowest surface energy plane in which strong, periodic Ti-O bond chains terminate. Herein, for the first time, a growth mechanism for La2Ti2O7 particles is proposed and discussed. Triangular prism structures along the c-axis were observed on the developed planes of KCl-grown particles whereas no such structures were found on those of LiCl-grown ones. AFM measurements suggest that the prism facets are {210}-La2Ti2O7, which results in lower interfacial energy within KCl.

  10. High-performance atom-probe field ion microscope study of segregation and hydrogen cracking in Fe-0. 29 Ti

    Energy Technology Data Exchange (ETDEWEB)

    Kuk, Y.; Pickering, H.W.; Sakurai, T.

    1980-01-01

    With the greatly improved resolution now available in energy focused atom probes, hydrogen can be readily resolved even when combined with metals having several isotopes. In addition to finding that H, H/sub 2/, FeH and TiH/sub 2/ accumulate at segregated grain boundaries in Fe-0.29 wt % Ti, a striking observation was made - the formation and propagation of a microcrack when the (field ion microscope) tip was exposed to hydrogen gas at elevated temperature. A small crack (approx. 200 A in length) was first noticed at a grain-boundary intersection during field ion imaging. This was an open crack, formed by detachment of metal between the intersecting grain boundaries, which was observed to be much larger after the tip was reheated to 1300/sup 0/K for 10 min. in the presence of 10/sup 2/ Pa (1 torr) H/sub 2/. This crack could be easily reduced in size by gradually field evaporating the surface. Its propagation was repeated several times and reproducible results were obtained. Hydrogen was identified in quantity in the crack surface, though not elsewhere. The observation of H/sub 2/ is taken to mean that H/sub 2/ gas was trapped in the grain boundary. The grain boundary was also observed to be enriched in Ti, O, C and S, in agreement with earlier results for Fe-Ti.

  11. Characterization of low temperature deposited atomic layer deposition TiO2 for MEMS applications

    NARCIS (Netherlands)

    Huang, Y.; Pandraud, G.; Sarro, P.M.

    2012-01-01

    TiO2 is an interesting and promising material for micro-/nanoelectromechanical systems (MEMS/NEMS). For high performance and reliable MEMS/NEMS, optimization of the optical characteristics, mechanical stress, and especially surface smoothness of TiO2 is required. To overcome the roughness issue of t

  12. Characterization of low temperature deposited atomic layer deposition TiO2 for MEMS applications

    NARCIS (Netherlands)

    Huang, Y.; Pandraud, G.; Sarro, P.M.

    2012-01-01

    TiO2 is an interesting and promising material for micro-/nanoelectromechanical systems (MEMS/NEMS). For high performance and reliable MEMS/NEMS, optimization of the optical characteristics, mechanical stress, and especially surface smoothness of TiO2 is required. To overcome the roughness issue of

  13. Evidence of Photocatalytic Dissociation of Water on TiO2 with Atomic Resolution

    CERN Document Server

    Tan, Shijing; Wang, Yang; Zhao, Jin; Zhao, Aidi; Wang, Bing; Luo, Yi; Yang, Jinlong; Hou, J G

    2011-01-01

    Photocatalytic water splitting reaction on TiO2 surface is one of the fundamental issues that bears significant implication in hydrogen energy technology and has been extensively studied. However, the existence of the very first reaction step, the direct photo-dissociation of water, has been disregarded. Here, we provide unambiguously experimental evidence to demonstrate that adsorbed water molecules on reduced rutile TiO2(110)-1\\times1 surface can be dissociated under UV irradiation using low temperature scanning tunneling microscopy. It is identified that a water molecule at fivefold coordinated Ti (Ti5c) site can be photocatalytically dissociated, resulting in a hydroxyl at Ti5c and another hydroxyl at bridge oxygen row. Our findings reveal a missing link in the photocatalytic water splitting reaction chain, which greatly contribute to the detailed understanding of underlying mechanism.

  14. Relating Electronic and Geometric Structure of Atomic Layer Deposited BaTiO3 to its Electrical Properties.

    Science.gov (United States)

    Torgersen, Jan; Acharya, Shinjita; Dadlani, Anup Lal; Petousis, Ioannis; Kim, Yongmin; Trejo, Orlando; Nordlund, Dennis; Prinz, Fritz B

    2016-04-21

    Atomic layer deposition allows the fabrication of BaTiO3 (BTO) ultrathin films with tunable dielectric properties, which is a promising material for electronic and optical technology. Industrial applicability necessitates a better understanding of their atomic structure and corresponding properties. Through the use of element-specific X-ray absorption near edge structure (XANES) analysis, O K-edge of BTO as a function of cation composition and underlying substrate (RuO2 and SiO2) is revealed. By employing density functional theory and multiple scattering simulations, we analyze the distortions in BTO's bonding environment captured by the XANES spectra. The spectral weight shifts to lower energy with increasing Ti content and provides an atomic scale (microscopic) explanation for the increase in leakage current density. Differences in film morphologies in the first few layers near substrate-film interfaces reveal BTO's homogeneous growth on RuO2 and its distorted growth on SiO2. This work links structural changes to BTO thin-film properties and provides insight necessary for optimizing future BTO and other ternary metal oxide-based thin-film devices.

  15. Neighboring Hetero-Atom Assistance of Sacrificial Amines to Hydrogen Evolution Using Pt-Loaded TiO2-Photocatalyst

    Directory of Open Access Journals (Sweden)

    Masahide Yasuda

    2014-05-01

    Full Text Available Photocatalytic H2 evolution was examined using Pt-loaded TiO2-photocatalyst in the presence of amines as sacrificial agents. In the case of amines with all of the carbon attached to the hetero-atom such as 2-aminoethanol, 1,2-diamonoethane, 2-amino-1,3-propanediol, and 3-amino-1,2-propanediol, they were completely decomposed into CO2 and water to quantitatively evolve H2. On the other hand, the amines with both hetero-atoms and one methyl group at the β-positions (neighboring carbons of amino group such as 2-amino-1-propanol and 1,2-diaminopropane were partially decomposed. Also, the photocatalytic H2 evolution using amines without the hetero-atoms at the β-positions such as ethylamine, propylamine, 1-butylamine, 1,3-diaminopropane, 2-propylamine, and 2-butylamine was inefficient. Thus, it was found that the neighboring hetero-atom strongly assisted the degradation of sacrificial amines. Moreover, rate constants for H2 evolution were compared among amines. In conclusion, the neighboring hetero-atom did not affect the rate constants but enhanced the yield of hydrogen evolution.

  16. Hybrid functional IrO2-TiO2 thin film resistor prepared by atomic layer deposition for thermal inkjet printheads

    Institute of Scientific and Technical Information of China (English)

    Won-Sub KWACK; Hyoung-Seok MOON; Seong-Jun JEONG; Qi-min WANG; Se-Hun KWON

    2011-01-01

    IrO2-TiO2 thin films were prepared by atomic layer deposition using Ir(EtCp)(COD) and titanium isopropoxide (TTIP).in the IrO2-TiO2 thin films. The low temperature coefficient of resistance(TCR) values can be obtained by adopting IrO2-TiO2 composite thin films. Moreover, the change in the resistivity of lrO2-TiO2 thin films was below 10% even after O2 annealing process at 600 ℃. The step stress test results show that IrO2-TiO2 films have better characteristics than conventional TaN08 heater resistor.Therefore, IrO2-TiO2 composite thin films can be used as a heater resistor material in thermal inkjet printhead.

  17. A new form of chemisorbed photo- and electro-active atomic H species on the TiO2(110) surface

    Science.gov (United States)

    Zhang, Zhen; Yates, John T.

    2016-10-01

    Hydrogen adsorption on TiO2 is of importance in chemical and photochemical reduction processes. Using several surface science methods, we clearly distinguish two kinds of H species on the surface of rutile TiO2(110)-1 × 1. In contrast with the well-studied bridge-bonded OH species (α-H) originating from H2O dissociation on the surface oxygen vacancy site on TiO2(110), atomic H adsorption on the TiO2(110) (denoted as β-H) exhibits special high sensitivity to the electronic excitation of the TiO2(110) by either electrons or UV photons. The formation of molecular H2 gas by photoexcitation of β-H/TiO2(110) surfaces has been observed, which may shed light on the basic understanding of the processes of photocatalytic H2 production by splitting water.

  18. Suppressed grain-boundary scattering in atomic layer deposited Nb:TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Niemelä, Janne-Petteri; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland); Hirose, Yasushi; Hasegawa, Tetsuya [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency, Tokyo 113-0033 (Japan); Shigematsu, Kei [Kanagawa Academy of Science and Technology, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency, Tokyo 113-0033 (Japan); Sano, Masahito [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan)

    2015-11-09

    We have fabricated high-quality thin films of the transparent conducting anatase Nb:TiO{sub 2} on glass substrates through atomic layer deposition, and a subsequent reductive heat treatment of the as-deposited amorphous films. Hall-effect measurements and Drude-fitting of the Vis-NIR spectra indicate that for lightly doped films deposited at temperatures around 170 °C, grain boundary scattering becomes negligible and the mobility is predominately limited by phonon-electron scattering inherent to the anatase lattice and by impurities. Simultaneously, such lighter doping leads to reduced plasma absorption, thereby improving material's performance as a transparent conductor.

  19. Infrared and thermoelectric power generation in thin atomic layer deposited Nb-doped TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Mann, Harkirat S.; Lang, Brian N.; Schwab, Yosyp; Scarel, Giovanna, E-mail: scarelgx@jmu.edu [Department of Physics and Astronomy, James Madison University, 901 Carrier Drive, Harrisonburg, Virginia 22807 (United States); Niemelä, Janne-Petteri; Karppinen, Maarit [Department of Chemistry, Aalto University, P.O. Box 16100, Aalto, 00076 Finland (Finland)

    2015-01-15

    Infrared radiation is used to radiatively transfer heat to a nanometric power generator (NPG) device with a thermoelectric Nb-doped TiO{sub 2} film deposited by atomic layer deposition (ALD) as the active element, onto a borosilicate glass substrate. The linear rise of the produced voltage with respect to the temperature difference between the “hot” and “cold” junctions, typical of the Seebeck effect, is missing. The discovery of the violation of the Seebeck effect in NPG devices combined with the ability of ALD to tune thermoelectric thin film properties could be exploited to increase the efficiency of these devices for energy harvesting purposes.

  20. Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone.

    Science.gov (United States)

    Jin, Chunyan; Liu, Ben; Lei, Zhongxiang; Sun, Jiaming

    2015-01-01

    TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C. Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm. The red band exhibits a strong correlation with defects of the under-coordinated Ti(3+) ions, and the green band shows a close relationship with the oxygen vacancies on (101) oriented anatase crystal surface. A blue shift of the photoluminescence spectra reveals that the defects of under-coordinated Ti(3+) ions transform to surface oxygen vacancies in the anatase TiO2 film annealing at temperature from 800°C to 900°C in N2 atmosphere.

  1. Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

    Science.gov (United States)

    Zhang, Wei; Kong, Ji-Zhou; Cao, Zheng-Yi; Li, Ai-Dong; Wang, Lai-Guo; Zhu, Lin; Li, Xin; Cao, Yan-Qiang; Wu, Di

    2017-06-01

    The HfO2/TiO2/HfO2 trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on the resistive switching properties of trilayer-structure units has been investigated. Both Pt/HfO2/TiO2/HfO2/Pt and Pt/HfO2/TiO2/HfO2/TiN exhibit typical bipolar resistive switching behavior. The dominant conduction mechanisms in low and high resistance states (LRS and HRS) of both memory cells are Ohmic behavior and space-charge-limited current, respectively. It is found that the bottom electrodes of Pt and TiN have great influence on the electroforming polarity preference, ratio of high and low resistance, and dispersion of the operating voltages of trilayer-structure memory cells. Compared to using symmetric Pt top/bottom electrodes, the RRAM cells using asymmetric Pt top/TiN bottom electrodes show smaller negative forming voltage of -3.7 V, relatively narrow distribution of the set/reset voltages and lower ratio of high and low resistances of 102. The electrode-dependent electroforming polarity can be interpreted by considering electrodes' chemical activity with oxygen, the related reactions at anode, and the nonuniform distribution of oxygen vacancy concentration in trilayer-structure of HfO2/TiO2/HfO2 on Pt- and TiN-coated Si. Moreover, for Pt/HfO2/TiO2/HfO2/TiN devices, the TiN electrode as oxygen reservoir plays an important role in reducing forming voltage and improving uniformity of resistive switching parameters.

  2. Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition.

    Science.gov (United States)

    Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M E; Puurunen, Riikka L; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo-Pekka

    2016-11-04

    The thermophysical properties of Al2O3/TiO2 nanolaminates deposited by atomic layer deposition (ALD) are studied as a function of bilayer thickness and relative TiO2 content (0%-100%) while the total nominal thickness of the nanolaminates was kept at 100 nm. Cross-plane thermal conductivity of the nanolaminates is measured at room temperature using the nanosecond transient thermoreflectance method. Based on the measurements, the nanolaminates have reduced thermal conductivity as compared to the pure amorphous thin films, suggesting that interfaces have a non-negligible effect on thermal transport in amorphous nanolaminates. For a fixed number of interfaces, we find that approximately equal material content of Al2O3 and TiO2 produces the lowest value of thermal conductivity. The thermal conductivity reduces with increasing interface density up to 0.4 nm(-1), above which the thermal conductivity is found to be constant. The value of thermal interface resistance approximated by the use of diffuse mismatch model was found to be 0.45 m(2) K GW(-1), and a comparative study employing this value supports the interpretation of non-negligible interface resistance affecting the overall thermal conductivity also in the amorphous limit. Finally, no clear trend in thermal conductivity values was found for nanolaminates grown at different deposition temperatures, suggesting that the temperature in the ALD process has a non-trivial while modest effect on the overall thermal conductivity in amorphous nanolaminates.

  3. Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition

    Science.gov (United States)

    Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M. E.; Puurunen, Riikka L.; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo-Pekka

    2016-11-01

    The thermophysical properties of Al2O3/TiO2 nanolaminates deposited by atomic layer deposition (ALD) are studied as a function of bilayer thickness and relative TiO2 content (0%-100%) while the total nominal thickness of the nanolaminates was kept at 100 nm. Cross-plane thermal conductivity of the nanolaminates is measured at room temperature using the nanosecond transient thermoreflectance method. Based on the measurements, the nanolaminates have reduced thermal conductivity as compared to the pure amorphous thin films, suggesting that interfaces have a non-negligible effect on thermal transport in amorphous nanolaminates. For a fixed number of interfaces, we find that approximately equal material content of Al2O3 and TiO2 produces the lowest value of thermal conductivity. The thermal conductivity reduces with increasing interface density up to 0.4 nm-1, above which the thermal conductivity is found to be constant. The value of thermal interface resistance approximated by the use of diffuse mismatch model was found to be 0.45 m2 K GW-1, and a comparative study employing this value supports the interpretation of non-negligible interface resistance affecting the overall thermal conductivity also in the amorphous limit. Finally, no clear trend in thermal conductivity values was found for nanolaminates grown at different deposition temperatures, suggesting that the temperature in the ALD process has a non-trivial while modest effect on the overall thermal conductivity in amorphous nanolaminates.

  4. Plasma-enhanced chemical vapor deposition of graphene on copper substrates

    Directory of Open Access Journals (Sweden)

    Nicolas Woehrl

    2014-04-01

    Full Text Available A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO2 substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm2. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

  5. Deposition of electrochromic tungsten oxide thin films by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Henley, W.B.; Sacks, G.J. [Univ. of South Florida, Tampa, FL (United States). Center of Microelectronics

    1997-03-01

    Use of plasma-enhanced chemical vapor deposition (PECVD) for electrochromic WO{sub 3} film deposition is investigated. Oxygen, hydrogen, and tungsten hexafluoride were used as source gases. Reactant gas flow was investigated to determine the effect on film characteristics. High quality optical films were obtained at deposition rates on the order of 100 {angstrom}/s. Higher deposition rates were attainable but film quality and optical coherence degraded. Atomic emission spectroscopy (AES), was used to provide an in situ assessment of the plasma deposition chemistry. Through AES, it is shown that the hydrogen gas flow is essential to the deposition of the WO{sub 3} film. Oxygen gas flow and tungsten hexafluoride gas flow must be approximately equal for high quality films.

  6. Characterization of Thin Films Deposited with Precursor Ferrocene by Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YAO Kailun; ZHENG Jianwan; LIU Zuli; JIA Lihui

    2007-01-01

    In this paper,the characterization of thin films,deposited with the precursor ferrocene(FcH)by the plasma enhanced chemical vapour deposition(PECVD)technique,was investigated.The films were measured by Scanning Electronic Microscopy(SEM),Atomic Force Microscopy(AFM),Electron Spectroscopy for Chemical Analysis(ESCA),and superconducting Quantum Interference Device(SQUID).It was observed that the film's layer is homogeneous in thickness and has a dense morphology without cracks.The surface roughness is about 36 nm.From the results of ESCA,it can be inferred that the film mainly contains the compound FeOOH,and carbon is combined with oxygen in different forms under different supply-powers.The hysteresis loops indicate that the film is of soft magnetism.

  7. Determination of thermo-optic properties of atomic layer deposited thin TiO2 films for athermal resonant waveguide gratings by spectroscopic ellipsometry

    Science.gov (United States)

    Saleem, Muhammad Rizwan; Ali, Rizwan; Honkanen, Seppo; Turunen, Jari

    2014-05-01

    We report on variation in the refractive index of amorphous and isotropic TiO2 thin films grown by Atomic Layer Deposition (ALD) in nano optical devices. ALD-TiO2 films of thicknesses negative thermo-optic coefficient (TOC) due to decrease in refractive index with temperature, owing to inherent hydrophilic nature. While ALD-TiO2 films with thicknesses > 200 nm show positive TOC due to the predominance of TiO2 thickness over the very thin surface porosity region. The negative TOC of thin TiO2 films was controlled by depositing thin ALD-Al2O3 diffusion barrier films that showed impermeable behavior to block the evaporation of adsorbed water molecules on TiO2 surfaces in thermal environments. This approach turns negative sign of TOC of TiO2 thin films to positive one which is necessary to stabilize the central resonance peak of a guided mode resonance filter (GMRF). The ALD-TiO2 and ALDAl2O3 bi-layer stack was modeled by VASE analysis of spectroscopic ellipsometry using Cauchy Model to extract refractive indices at various temperatures, measured at two different angle of incidence (65° and 75°), covering a wide spectral range 380 <= λ <= 1800. The temperature dependent index and density of TiO2 films were calculated from ellipsometric measured data using Lorentz-Lorenz relation.

  8. Atomic level observations of mechanical damage in shot peened TiAl

    Science.gov (United States)

    Appel, Fritz

    2013-01-01

    High-resolution transmission microscopy has been used to reveal the defect processes occurring during shot peening of a high-strength titanium aluminide alloy with a nearly lamellar microstructure. Deformation is characterised by intensive dislocation glide and mechanical twinning, involving all potential slip systems available in the α2(Ti3Al) and γ(TiAl) phases. The outermost surface layer consists of extremely fine crystals that are probably a contaminant titanium nitride phase, embedded into an amorphous phase. The mechanisms involved in this mechanically driven solid state transformation will be elucidated. Particular emphasis is paid on the thermodynamic and kinetic factors involved in the amorphisation reaction.

  9. Thickness and photocatalytic activity relation in TiO$_2$:N films grown by atomic layer deposition with methylene-blue and E. coli bacteria

    Indian Academy of Sciences (India)

    M M M CONTRERAS TURRUBIARTES; E LÓPEZ LUNA; J L ENRIQUEZ-CARREJO; A PEDROZA RODRIGUEZ; J C SALCEDO REYES; M A VIDAL BORBOLLA; P G MANI-GONZALEZ

    2017-10-01

    This study presents an analysis of the photocatalytic efficiency in TiO$_2$:N thin films grown by atomic layer deposition related to the film thickness. The nitriding process was carried out with nitrogen plasma by molecular nitrogen decomposition after TiO$_2$ deposition. The study was performed using the time-dependent degradation of colour units for methylene-blue solutions and inactivation percentages for Escherichia coli bacteria, for potential applications in sewage purification. To determine the optoelectronic properties of the films, the optical, structural, surface and thickness characterizations were carried out by photoluminescence, Raman spectroscopy, atomic force microscopy and scanning electron microscopy, respectively.

  10. Operando atomic structure and active sites of TiO2(110)-supported gold nanoparticles during carbon monoxide oxidation.

    Science.gov (United States)

    Saint-Lager, Marie-Claire; Laoufi, Issam; Bailly, Aude

    2013-01-01

    It is well known that gold nanoparticles supported on TiO2 act as a catalyst for CO oxidation, even below room temperature. Despite extensive studies, the origin of this catalytic activity remains under debate. Indeed, when the particle size decreases, many changes may occur; thus modifying the nanoparticles' electronic properties and consequently their catalytic performances. Thanks to a state-of-the-art home-developed setup, model catalysts can be prepared in ultra-high vacuum and their morphology then studied in operando conditions by Grazing Incidence Small Angle X-ray Scattering, as well as their atomic structure by Grazing Incidence X-ray Diffraction as a function of their catalytic activity. We previously reported on the existence of a catalytic activity maximum observed for three-dimensional gold nanoparticles with a diameter of 2-3 nm and a height of 6-7 atomic planes. In the present work we correlate this size dependence of the catalytic activity to the nanoparticles' atomic structure. We show that even when their size decreases below the optimum diameter, the gold nanoparticles keep the face-centered cubic structure characteristic of bulk gold. Nevertheless, for these smallest nanoparticles, the lattice parameter presents anisotropic strains with a larger contraction in the direction perpendicular to the surface. Moreover a careful analysis of the atomic-scale morphology around the catalytic activity maximum tends to evidence the role of sites with a specific geometry at the interface between the nanoparticles and the substrate. This argues for models where atoms at the interface periphery act as catalytically active sites for carbon monoxide oxidation.

  11. Atomic layer deposition of TiO2 photonic crystal waveguide biosensors

    NARCIS (Netherlands)

    Jardinier, E.; Pandraud, G.; Pham, M.H.; French, P.J.; Sarro, P.M.

    2009-01-01

    A photonic crystal waveguide biosensor in the visible is presented for biosensing. The sensor is applied to Refractive Index (RI) measurements. The sensitivity at different wavelength is presented for both air holes and air core configurations of photonic crystal waveguide (PCW) made of TiO2. It is

  12. Plasma-enhanced Deposition of Nano-Structured Carbon Films

    Institute of Scientific and Technical Information of China (English)

    Yang Qiaoqin (杨巧勤); Xiao Chijin (肖持进); A. Hirose

    2005-01-01

    By pre-treating substrate with different methods and patterning the catalyst, selective and patterned growth of diamond and graphitic nano-structured carbon films have been realized through DC Plasma-Enhanced Hot Filament Chemical Vapor Deposition (PE-HFCVD).Through two-step processing in an HFCVD reactor, novel nano-structured composite diamond films containing a nanocrystalline diamond layer on the top of a nanocone diamond layer have been synthesized. Well-aligned carbon nanotubes, diamond and graphitic carbon nanocones with controllable alignment orientations have been synthesized by using PE-HFCVD. The orientation of the nanostructures can be controlled by adjusting the working pressure. In a Microwave Plasma Enhanced Chemical Vapor Deposition (MW-PECVD) reactor, high-quality diamond films have been synthesized at low temperatures (310 ℃~550 ℃) without adding oxygen or halogen gas in a newly developed processing technique. In this process, carbon source originates from graphite etching, instead of hydrocarbon. The lowest growth temperature for the growth of nanocrystalline diamond films with a reasonable growth rate without addition of oxygen or halogen is 260 ℃.

  13. Atomic Layer Deposition of p-Type Epitaxial Thin Films of Undoped and N-Doped Anatase TiO2.

    Science.gov (United States)

    Vasu, K; Sreedhara, M B; Ghatak, J; Rao, C N R

    2016-03-01

    Employing atomic layer deposition, we have grown p-type epitaxial undoped and N-doped anatase TiO2(001) thin films on c-axis Al2O3 substrate. From X-ray diffraction and transmission electron microscopy studies, crystallographic relationships between the film and the substrate are found to be (001)TiO2//(0001)Al2O3 and [1̅10]TiO2//[011̅0]Al2O3. N-doping in TiO2 thin films enhances the hole concentration and mobility. The optical band gap of anatase TiO2 (3.23 eV) decreases to 3.07 eV upon N-doping. The epitaxial films exhibit room-temperature ferromagnetism and photoresponse. A TiO2-based homojunction diode was fabricated with rectification from the p-n junction formed between N-doped p-TiO2 and n-TiO2.

  14. TiO2 modified with Ag nanoparticles synthesized via ultrasonic atomization-UV reduction and the use of kinetic models to determine the acetic acid photocatalytic degradation

    Science.gov (United States)

    Xu, Yingcao; You, Hong

    2014-12-01

    TiO2 surfaces modified with noble metal nanoparticles have been found to effectively reduce the photogenerated carrier recombination rate and significantly extend the light absorption properties of TiO2, thereby greatly increasing its photocatalytic activity. In this paper, highly ordered, double-sided TiO2 nanotube arrays were prepared using an anodic oxidation method in a home-made reactor using glycerol/water (volume ratio 2:1) and NH4F (0.25 mol/L) as the electrolyte, titanium plates (10 cm × 2 cm × 0.5 mm) as the anode and graphite as the cathode at a constant voltage of 25 V. After a 2-h reaction, anatase TiO2 nanotubes were obtained upon calcination at 450 °C for 4 h. The Ag nanoparticles on the surfaces of the TiO2 were prepared via ultrasonic atomization-ultraviolet light reduction. First, a silver nitrate solution was sputtered into small droplets under ultrasonication. Then, the Ag+ droplets were reduced to Ag nanoparticles. The surface morphologies, structures and elemental compositions were characterized using SEM, EDS, XRD and XPS. The photocatalytic activities were determined in acetic acid solutions (40-200 mg/L), and a mathematical model for catalytic degradation was established based on a hyperbolic model. The SEM results showed that the diameters of the as-prepared Ag/TiO2 are approximately 100 nm and that the lengths are approximately 1.8 μm. The XRD crystal structure analysis shows that the anatase phase of the TiO2 does not change during the Ag modification, and there was a peak from Ag (2 2 0). The XPS determined that the Ag atom percentage was 1.11%. The degradation of acetic acid indicated that Ag/TiO2 has a higher photocatalytic activity than the undoped TiO2.

  15. Porous TiO2 Nanotubes with Spatially Separated Platinum and CoOx Cocatalysts Produced by Atomic Layer Deposition for Photocatalytic Hydrogen Production.

    Science.gov (United States)

    Zhang, Jiankang; Yu, Zhuobin; Gao, Zhe; Ge, Huibin; Zhao, Shichao; Chen, Chaoqiu; Chen, Shuai; Tong, Xili; Wang, Meihua; Zheng, Zhanfeng; Qin, Yong

    2017-01-16

    Efficient separation of photogenerated electrons and holes, and associated surface reactions, is a crucial aspect of efficient semiconductor photocatalytic systems employed for photocatalytic hydrogen production. A new CoOx /TiO2 /Pt photocatalyst produced by template-assisted atomic layer deposition is reported for photocatalytic hydrogen production on Pt and CoOx dual cocatalysts. Pt nanoclusters acting as electron collectors and active sites for the reduction reaction are deposited on the inner surface of porous TiO2 nanotubes, while CoOx nanoclusters acting as hole collectors and active sites for oxidation reaction are deposited on the outer surface of porous TiO2 nanotubes. A CoOx /TiO2 /Pt photocatalyst, comprising ultra-low concentrations of noble Pt (0.046 wt %) and CoOx (0.019 wt %) deposited simultaneously with one atomic layer deposition cycle, achieves remarkably high photocatalytic efficiency (275.9 μmol h(-1) ), which is nearly five times as high as that of pristine TiO2 nanotubes (56.5 μmol h(-1) ). The highly dispersed Pt and CoOx nanoclusters, porous structure of TiO2 nanotubes with large specific surface area, and the synergetic effect of the spatially separated Pt and CoOx dual cocatalysts contribute to the excellent photocatalytic activity.

  16. Low-temperature atomic layer deposition of TiO{sub 2} thin layers for the processing of memristive devices

    Energy Technology Data Exchange (ETDEWEB)

    Porro, Samuele, E-mail: samuele.porro@polito.it; Conti, Daniele; Guastella, Salvatore; Ricciardi, Carlo [Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy); Jasmin, Alladin; Pirri, Candido F. [Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy and Center for Space Human Robotics@PoliTo, Istituto Italiano di Tecnologia, C.so Trento 21, 10129 Torino (Italy); Bejtka, Katarzyna; Perrone, Denis; Chiolerio, Alessandro [Center for Space Human Robotics@PoliTo, Istituto Italiano di Tecnologia, C.so Trento 21, 10129 Torino (Italy)

    2016-01-15

    Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO{sub 2} thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such as self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO{sub 2} thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO{sub 2} thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switching behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications.

  17. Fabrication of high aspect ratio TiOsub>2sub> and Alsub>2sub>O>3sub> nanogratings by atomic layer deposition

    DEFF Research Database (Denmark)

    Shkondin, Evgeniy; Takayama, Osamu; Michael-Lindhard, Jonas

    2016-01-01

    The authors report on the fabrication of TiO2 and Al2O3 nanostructured gratings with an aspect ratio of up to 50. The gratings were made by a combination of atomic layer deposition (ALD) and dry etch techniques. The workflow included fabrication of a Si template using deep reactive ion etching...

  18. Investigation of the powder loading of gas-atomized Ti6Al4V powder using an ‘in-house’ binder for metal injection moulding

    CSIR Research Space (South Africa)

    Seerane, MN

    2013-10-01

    Full Text Available Powder loading is one of the most critical factors in metal injection moulding (MIM) technology. It largely determines the success or failure of the subsequent MIM processes. A gas-atomized Ti6Al4V powder was investigated to determine an optimum...

  19. cc domains with intrinsic screening and absence of closure domains in atomically ordered BaTiO3 in UHV

    Science.gov (United States)

    Watanabe, Y.; Kaku, S.; Nakamura, K.

    2010-03-01

    cc domains have been observed in ordinary environments, where extraneous screening hampers rigorous comparison with theories. Indeed, recent theories predict closure domains in the absence of extraneous screening. Therefore, we performed simultaneous topographic, electrostatic and piezoelectric imaging of atomically clean, free surface of BaTiO3 single crystal by AFM operated in ultra high vacuum (UHV).footnotetextS. Kaku et al., J.Kor.Phys.Soc.55,799(2009) BaTiO3 surface retains stoichiometry in UHV because of the absence of volatile elements (Pb, Bi, Li) and low TC The surface cleanness is confirmed by the detection of chemical bonding. Three imaging methods verified the assignment of ac and cc domains, which is consistent with conventional theory and experiments. These ac and cc domains change reversibly by weak electric field of 2kV/cm at RT. In addition, the temperature dependence of the domains agrees with convention theories. These observations prove the absence of dominating control of defects and impurities on the observed domains. The sole deviation is the reduction of the potential difference to 1/30 of the conventional theories. The described intrinsic nature of the domains indicates an intrinsic screening in cc domains, which is consistent with the intrinsic surface carrier layer on ferroelectrics.footnotetextWatanabe et al. PRL86332(2001), PRB57,789(1998)

  20. Atomic ordering and systematics of bonding lengths in the Ti-V omega phase: a neutron diffraction study

    Energy Technology Data Exchange (ETDEWEB)

    Benites, G.M.; Guillermet, A.F. [Consejo Nacional de Investigaciones Cientificas y Tecnicas, Centro Atomico Bariloche (Argentina); Aurelio, G. [Universidad Nacional del Comahue, Buenos Aires 1400, 8300 Neuquen (Argentina); Cuello, G.J.; Bermejo, F.J. [Instituto de Estructura de la Materia, Consejo Superior de Investigaciones Cientificas y Tecnicas, Serrano 123, Madrid E-28006 (Spain)

    1999-03-04

    A new model describing the structural and bonding properties of the omega ({Omega}) phase in Zr-Nb alloys has recently been presented [12]. This model, which was aimed at explaining the composition dependence of the bonding lengths, predicts that the {Omega} phase is ordered, i.e., that some crystallographic sites are preferentially occupied by Zr atoms. Such feature, which should in principle be observed in other, related {Omega} phases, has not yet been tested against direct measurements. This problem has now been studied in the Ti-V system, which is the analogue of Zr-Nb in the 3d-transition series. Neutron diffraction measurements have been performed in quenched Ti-V alloys with V contents between 14 and 17 at.%. The diffraction spectra have been analysed using the Rietveld method, and a systematic analysis is reported here of the possibility of deviations from the random occupation of the two sublattices which are distinguished in the {Omega} structure. In addition, these new diffraction data are used in an evaluation of the shortest interatomic distances which are relevant for a comparison with the predictions of the model of Grad et al. (orig.) 28 refs.

  1. NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO2 stack during resistive switching.

    Science.gov (United States)

    Filatova, Elena; Konashuk, Aleksei; Petrov, Yuri; Ubyivovk, Evgeny; Sokolov, Andrey; Selivanov, Andrei; Drozd, Victor

    2016-01-01

    We have studied the stability of the resistive switching process in the Al/(In2O3)0.9(SnO2)0.1/TiO2 assembly grown by atomic layer deposition. Besides electrical characterization the effect of electric field on the atomic electronic structure of the TiO2 layer was studied using near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The region of the current instability in the I-V characteristics was revealed. Presumably this current instability is supported by the amorphous structure of the TiO2 film but is initiated by the surface morphology of the Al substrate. A formation of the O2 molecules was established which occurs specifically in the region of the current instability that is a result of electrical Joule heating manifestation.

  2. Preparation of Transparent Bulk TiO2/PMMA Hybrids with Improved Refractive Indices via an in Situ Polymerization Process Using TiO2 Nanoparticles Bearing PMMA Chains Grown by Surface-Initiated Atom Transfer Radical Polymerization.

    Science.gov (United States)

    Maeda, Satoshi; Fujita, Masato; Idota, Naokazu; Matsukawa, Kimihiro; Sugahara, Yoshiyuki

    2016-12-21

    Transparent TiO2/PMMA hybrids with a thickness of 5 mm and improved refractive indices were prepared by in situ polymerization of methyl methacrylate (MMA) in the presence of TiO2 nanoparticles bearing poly(methyl methacrylate) (PMMA) chains grown using surface-initiated atom transfer radical polymerization (SI-ATRP), and the effect of the chain length of modified PMMA on the dispersibility of modified TiO2 nanoparticles in the bulk hybrids was investigated. The surfaces of TiO2 nanoparticles were modified with both m-(chloromethyl)phenylmethanoyloxymethylphosphonic acid bearing a terminal ATRP initiator and isodecyl phosphate with a high affinity for common organic solvents, leading to sufficient dispersibility of the surface-modified particles in toluene. Subsequently, SI-ATRP of MMA was achieved from the modified surfaces of the TiO2 nanoparticles without aggregation of the nanoparticles in toluene. The molecular weights of the PMMA chains cleaved from the modified TiO2 nanoparticles increased with increases in the prolonging of the polymerization period, and these exhibited a narrow distribution, indicating chain growth controlled by SI-ATRP. The nanoparticles bearing PMMA chains were well-dispersed in MMA regardless of the polymerization period. Bulk PMMA hybrids containing modified TiO2 nanoparticles with a thickness of 5 mm were prepared by in situ polymerization of the MMA dispersion. The transparency of the hybrids depended significantly on the chain length of the modified PMMA on the nanoparticles, because the modified PMMA of low molecular weight induced aggregation of the TiO2 nanoparticles during the in situ polymerization process. The refractive indices of the bulk hybrids could be controlled by adjusting the TiO2 content and could be increased up to 1.566 for 6.3 vol % TiO2 content (1.492 for pristine PMMA).

  3. Growth of Ti{sub x}Al{sub 1−x}O{sub y} films by atomic layer deposition using successive supply of metal precursors

    Energy Technology Data Exchange (ETDEWEB)

    Arroval, Tõnis, E-mail: tonis.arroval@ut.ee; Aarik, Lauri; Rammula, Raul; Aarik, Jaan

    2015-09-30

    Atomic layer deposition (ALD) of thin ternary films from TiCl{sub 4}, trimethylaluminum (TMA), AlCl{sub 3} and H{sub 2}O was investigated at different successions of precursor pulses with the aim to explore passivation effect of TiCl{sub 4} to the chemisorption of TMA and AlCl{sub 3}. Concentrations of Ti and Al in the films grown on silicon substrates at 100–500 °C in different ALD precursor sequences were studied. In order to obtain additional information about the deposition mechanisms, the behavior of the quartz crystal microbalance (QCM) signal during ALD cycles was characterized and analyzed at a deposition temperature of 200 °C. Post-deposition analysis revealed up to 2 times lower Al{sub 2}O{sub 3} deposition rate in the TiCl{sub 4}-TMA-H{sub 2}O and TiCl{sub 4}-AlCl{sub 3}-H{sub 2}O processes than that in the TiCl{sub 4}-H{sub 2}O-TMA-H{sub 2}O and TiCl{sub 4}-H{sub 2}O-AlCl{sub 3}-H{sub 2}O processes, respectively. Despite of the markedly reduced growth rate of Al{sub 2}O{sub 3} in the TiCl{sub 4}-TMA-H{sub 2}O and TiCl{sub 4}-AlCl{sub 3}-H{sub 2}O processes, films with Al/(Al + Ti) ratios exceeding 0.5 were obtained. Consequently, the surface intermediate species, which stopped further adsorption of TiCl{sub 4}, limited the adsorption of AlCl{sub 3} and TMA only partially. Enhanced growth rate of TiO{sub 2} was observed in films grown in the TiCl{sub 4}-TMA-H{sub 2}O and TiCl{sub 4}-H{sub 2}O-TMA-H{sub 2}O processes. QCM revealed more efficient chlorine release and thereby reduced effect of steric hindrance in those processes. In addition, marked increase of Al{sub 2}O{sub 3} deposition rate was observed in the TiCl{sub 4}-H{sub 2}O-TMA-H{sub 2}O and TiCl{sub 4}-TMA-H{sub 2}O processes with the increase of deposition temperature from 300 °C to higher temperatures. As no increase of this kind was recorded in the TMA-H{sub 2}O process, the effect was related to the influence of Ti-containing surface layer on the adsorption of TMA. - Highlights:

  4. Hydrogen-bonding-mediated synthesis of atomically thin TiO2 films with exposed (001) facets and applications in fast lithium insertion/extraction.

    Science.gov (United States)

    Zhang, Hongye; Yang, Zhenzhen; Gan, Wei; Zhao, Yanfei; Yu, Bo; Xu, Huanjun; Ma, Zhishuang; Hao, Leiduan; Chen, Dechao; Miao, Shiding; Liu, Zhimin

    2015-10-05

    Ultrathin two-dimensional (2D) crystalline materials show high specific surface area (SA) of high energy (HE) facets, imparting a significant improvement in their performances. Herein we report a novel route to synthesize TiO2 nanofilms (NFs) with atomic thickness (TiO2 NFs have nearly 100 % exposed (001) facets and give an extremely high SA up to 487 m(2)  g(-1) . The synergistic effect of HQ and choline chloride plays a vital role in the formation of TiO2 NFs and in the exposure of HE (001) facets. Because of its ultrathin feature and exposed (001) facet, the N2 -annealled TiO2 NFs showed fast kinetics of lithium insertion/extraction, demonstrating foreseeable applications in the energy storage. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Unit-Cell by Unit-Cell Homoepitaxial Growth Using Atomically Flat SrTiO3(001) Substrates and Pulsed Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    FEI Yi-Yan; WANG Xu; LU Hui-Bin; YANG Guo-Zhen; ZHU Xiang-Dong

    2005-01-01

    @@ Using a combination of chemical etching and thermal annealing methods, we have obtained atomically flat TiO2-terminated SrTiO3 (001) with large terraces.The average width of the terrace is only determined by miscut angles.When we continuously grow tens of SrTiO3 monolayers on such a surface under pulsed laser ablation deposition condition at 621℃, the growth proceeds in a layer-by-layer mode characterized by un-damped oscillations of the specular RHEED intensity.After the growth of 180 monolayers, the surface morphology is restored to the pre-growth condition with similarly large terraces after annealing in vacuum for only 30 min, indicating efficient mass transfer on TiO2-terminated terraces.

  6. Calibration graphs for Ti, Ta and Nb in sintered tungsten carbide by infrared laser ablation inductively coupled plasma atomic emission spectrometry.

    Science.gov (United States)

    Kanický, V; Otruba, V; Mermet, J M

    2001-12-01

    Infrared laser ablation (IR-LA) has been studied as a sample introduction technique for the analysis of sintered cobalt-cemented tungsten carbide materials by inductively coupled plasma atomic emission spectrometry (ICP-AES). Fractionation of cobalt was observed. Linearity of calibration plots was verified at least up to 15% Ti, 8% Ta, and 3% Nb. Above 1% (m/m) Ti, Ta, and Nb, the repeatability of results was better than 3% R.S.D. The relative uncertainty at the centroid of the calibration line was in the range from +/- 3% to +/- 4% for Ti, Ta, and Nb with internal standardization by tungsten and up to +/- 5% without internal standardization. The limits of detection were 0.004% Ti, 0.001% Ta, and 0.004% Nb. Elimination of the cemented hardmetal dissolution procedure is the main advantage of this method.

  7. Mapping chemical disorder and ferroelectric distortions in the double perovskite compound Sr 2-x Gd x MnTiO6 by atomic resolution electron microscopy and spectroscopy.

    Science.gov (United States)

    Biškup, Neven; Álvarez-Serrano, Inmaculada; Veiga, Maria; Rivera-Calzada, Alberto; Garcia-Hernandez, Mar; Pennycook, Stephen J; Varela, Maria

    2014-06-01

    In this work we report a study of the chemical and structural order of the double perovskite compound Sr 2-x Gd x MnTiO6 for compositions x=0, 0.25, 0.5, 0.75, and 1. A noticeable disorder at the B-site in the Mn and Ti sublattice is detected at the atomic scale by electron energy-loss spectroscopy for all x values, resulting in Mn-rich and Ti-rich regions. For x ≥ 0.75, the cubic unit cell doubles and lowers its symmetry because of structural rearrangements associated with a giant ferroelectric displacement of the perovskite B-site cation. We discuss this finding in the light of the large electroresistance observed in Sr 2-x Gd x MnTiO6, x ≥ 0.75.

  8. Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Matthew T. Cole

    2013-05-01

    Full Text Available A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child’s law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing sheath fields by up to 7 mm. A 7 mbar growth atmosphere combined with a 25 W plasma permitted the concurrent growth and alignment of carbon nanotubes with electric fields of the order of 0.04 V μm−1 with linear packing densities of up to ~5 × 104 cm−1. These results open up the potential for multi-directional in situ alignment of carbon nanotubes providing one viable route to the fabrication of many novel optoelectronic devices.

  9. Plasma Enhanced Growth of Carbon Nanotubes For Ultrasensitive Biosensors

    Science.gov (United States)

    Cassell, Alan M.; Li, J.; Ye, Q.; Koehne, J.; Chen, H.; Meyyappan, M.

    2004-01-01

    The multitude of considerations facing nanostructure growth and integration lends itself to combinatorial optimization approaches. Rapid optimization becomes even more important with wafer-scale growth and integration processes. Here we discuss methodology for developing plasma enhanced CVD growth techniques for achieving individual, vertically aligned carbon nanostructures that show excellent properties as ultrasensitive electrodes for nucleic acid detection. We utilize high throughput strategies for optimizing the upstream and downstream processing and integration of carbon nanotube electrodes as functional elements in various device types. An overview of ultrasensitive carbon nanotube based sensor arrays for electrochemical biosensing applications and the high throughput methodology utilized to combine novel electrode technology with conventional MEMS processing will be presented.

  10. Plasma Enhanced Growth of Carbon Nanotubes For Ultrasensitive Biosensors

    Science.gov (United States)

    Cassell, Alan M.; Li, J.; Ye, Q.; Koehne, J.; Chen, H.; Meyyappan, M.

    2004-01-01

    The multitude of considerations facing nanostructure growth and integration lends itself to combinatorial optimization approaches. Rapid optimization becomes even more important with wafer-scale growth and integration processes. Here we discuss methodology for developing plasma enhanced CVD growth techniques for achieving individual, vertically aligned carbon nanostructures that show excellent properties as ultrasensitive electrodes for nucleic acid detection. We utilize high throughput strategies for optimizing the upstream and downstream processing and integration of carbon nanotube electrodes as functional elements in various device types. An overview of ultrasensitive carbon nanotube based sensor arrays for electrochemical biosensing applications and the high throughput methodology utilized to combine novel electrode technology with conventional MEMS processing will be presented.

  11. Plasma enhanced diamond deposition on steel and Si substrates

    Institute of Scientific and Technical Information of China (English)

    Y.S. Li; Y. Tang; W. Chen; Q. Yang; C. Xiao; A. Hirose

    2009-01-01

    Diamond growth on Fe-Cr-Al-Si steel and Si substrates was comparatively investigated in microwave plasma enhanced chemical vapor deposition (MPCVD) reactor with different deposition parameters. Adherent nanocrystalline diamond films were directly deposited on this steel substrate under a typical deposition condition, whereas microcrystalline diamond films were produced on Si wafer. With increasing CH4 concentration, reaction pressure, or the total gas flow rate, the quality of nanocrystalline diamond films formed on Fe-Cr-Al-Si substrates is gradually deteriorated in terms of density and adhesion. This impaired diamond quality on steels is primarily associated with a combined effect by the substrate composition and the specific process conditions that favor excessive nucleation of diamond.

  12. Ternary hybrid polymeric nanocomposites through grafting of polystyrene on graphene oxide-TiO{sub 2} by surface initiated atom transfer radical polymerization (SI-ATRP)

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Arvind; Bansal, Ankushi; Behera, Babita; Jain, Suman L.; Ray, Siddharth S., E-mail: ssray@iip.res.in

    2016-04-01

    A ternary hybrid of graphene oxide-titania-polystyrene (GO-TiO{sub 2}-PS) nanocomposite is developed where polystyrene composition is regulated by controlling growth of polymer chains and nanoarchitectonics is discussed. Graphene Oxide-TiO{sub 2} (GO-TiO{sub 2}) nanocomposite is prepared by in-situ hydrothermal method and the surface is anchored with α-bromoisobutyryl bromide to activate GO-TiO{sub 2} as initiator for polymerization. In-situ grafting of polystyrene through surface initiated atom transfer radical polymerization (SI- ATRP) on this Br-functionalized nano-composite initiator yields GO-TiO{sub 2}-PS ternary hybrid. Varying the monomer amount and keeping the concentration of initiator constant, polystyrene chain growth is regulated with narrow poly-dispersivity to achieve desired composition. This composite is well characterized by various analytical techniques like FTIR, XRD, DSC, SEM, TEM, and TGA. - Highlights: • Nanocomposite of ternary hybrid of GO-TiO{sub 2} with polystyrene. • PS is surface grafted on GO-TiO{sub 2}. • Polymer chain lengths are well regulated by SI-ATRP living polymerization. • Thermal stability of this hybrid is relatively high.

  13. True atomic-scale imaging of a spinel Li{sub 4}Ti{sub 5}O{sub 12}(111) surface in aqueous solution by frequency-modulation atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kitta, Mitsunori, E-mail: m-kitta@aist.go.jp; Kohyama, Masanori [Research Institute for Ubiquitous Energy Devices, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Onishi, Hiroshi [Department of Chemistry, Graduate School of Science, Kobe University 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)

    2014-09-15

    Spinel-type lithium titanium oxide (LTO; Li{sub 4}Ti{sub 5}O{sub 12}) is a negative electrode material for lithium-ion batteries. Revealing the atomic-scale surface structure of LTO in liquid is highly necessary to investigate its surface properties in practical environments. Here, we reveal an atomic-scale image of the LTO(111) surface in LiCl aqueous solution using frequency-modulation atomic force microscopy. Atomically flat terraces and single steps having heights of multiples of 0.5 nm were observed in the aqueous solution. Hexagonal bright spots separated by 0.6 nm were also observed on the flat terrace part, corresponding to the atomistic contrast observed in the ultrahigh vacuum condition, which suggests that the basic atomic structure of the LTO(111) surface is retained without dramatic reconstruction even in the aqueous solution.

  14. Nanostructured silicon carbon thin films grown by plasma enhanced chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Coscia, U. [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); CNISM Unita' di Napoli, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Ambrosone, G., E-mail: ambrosone@na.infn.it [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); SPIN-CNR, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Basa, D.K. [Department of Physics, Utkal University, Bhubaneswar 751004 (India); Rigato, V. [INFN Laboratori Nazionali Legnaro, 35020 Legnaro (Padova) (Italy); Ferrero, S.; Virga, A. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)

    2013-09-30

    Nanostructured silicon carbon thin films, composed of Si nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by varying rf power in ultra high vacuum plasma enhanced chemical vapour deposition system using silane and methane gas mixtures diluted in hydrogen. In this paper we have studied the compositional, structural and electrical properties of these films as a function of rf power. It is shown that with increasing rf power the atomic densities of carbon and hydrogen increase while the atomic density of silicon decreases, resulting in a reduction in the mass density. Further, it is demonstrated that carbon is incorporated into amorphous matrix and it is mainly bonded to silicon. The study has also revealed that the crystalline volume fraction decreases with increase in rf power and that the films deposited with low rf power have a size distribution of large and small crystallites while the films deposited with relatively high power have only small crystallites. Finally, the enhanced transport properties of the nanostructured silicon carbon films, as compared to amorphous counterpart, have been attributed to the presence of Si nanocrystallites. - Highlights: • The mass density of silicon carbon films decreases from 2.3 to 2 g/cm{sup 3}. • Carbon is incorporated in the amorphous phase and it is mainly bonded to silicon. • Nanostructured silicon carbon films are deposited at rf power > 40 W. • Si nanocrystallites in amorphous silicon carbon enhance the electrical properties.

  15. Use of plasma enhanced ALD to construct efficient interference filters for astronomy in the FUV

    Science.gov (United States)

    Scowen, Paul A.; Nemanich, Robert; Eller, Brianna; Yu, Hongbin; Mooney, Tom; Beasley, Matt

    2016-07-01

    Over the past few years the advent of atomic layer deposition (ALD) technology has opened new capabilities to the field of coatings deposition for use in optical elements. At the same time, there have been major advances in both optical designs and detector technologies that can provide orders of magnitude improvement in throughput in the far ultraviolet (FUV) and near ultraviolet (NUV) passbands. Recent review work has shown that a veritable revolution is about to happen in astronomical diagnostic work for targets ranging from protostellar and protoplanetary systems, to the intergalactic medium that feeds gas supplies for galactic star formation, and supernovae and hot gas from star forming regions that determine galaxy formation feedback. These diagnostics are rooted in access to a forest of emission and absorption lines in the ultraviolet (UV)[1], and all that prevents this advance is the lack of throughput in such systems, even in space-based conditions. We outline an approach to use a range of materials to implement stable optical layers suitable for protective overcoats with high UV reflectivity and unprecedented uniformity, and use that capability to leverage innovative ultraviolet/optical filter construction to enable astronomical science. These materials will be deposited in a multilayer format over a metal base to produce a stable construct. Specifically, we will employ the use of PEALD (plasma-enhanced atomic layer deposition) methods for the deposition and construction of reflective layers that can be used to construct unprecedented filter designs for use in the ultraviolet.

  16. Magnetism, Spin Texture, and In-Gap States: Atomic Specialization at the Surface of Oxygen-Deficient SrTiO_{3}.

    Science.gov (United States)

    Altmeyer, Michaela; Jeschke, Harald O; Hijano-Cubelos, Oliver; Martins, Cyril; Lechermann, Frank; Koepernik, Klaus; Santander-Syro, Andrés F; Rozenberg, Marcelo J; Valentí, Roser; Gabay, Marc

    2016-04-15

    Motivated by recent spin- and angular-resolved photoemission (SARPES) measurements of the two-dimensional electronic states confined near the (001) surface of oxygen-deficient SrTiO_{3}, we explore their spin structure by means of ab initio density functional theory (DFT) calculations of slabs. Relativistic nonmagnetic DFT calculations display Rashba-like spin winding with a splitting of a few meV and when surface magnetism on the Ti ions is included, bands become spin-split with an energy difference ∼100  meV at the Γ point, consistent with SARPES findings. While magnetism tends to suppress the effects of the relativistic Rashba interaction, signatures of it are still clearly visible in terms of complex spin textures. Furthermore, we observe an atomic specialization phenomenon, namely, two types of electronic contributions: one is from Ti atoms neighboring the oxygen vacancies that acquire rather large magnetic moments and mostly create in-gap states; another comes from the partly polarized t_{2g} itinerant electrons of Ti atoms lying further away from the oxygen vacancy, which form the two-dimensional electron system and are responsible for the Rashba spin winding and the spin splitting at the Fermi surface.

  17. Catalytic role of TiO(2) terminal oxygen atoms in liquid-phase photocatalytic reactions: oxidation of aromatic compounds in anhydrous acetonitrile.

    Science.gov (United States)

    Montoya, Juan F; Bahnemann, Detlef W; Peral, José; Salvador, Pedro

    2014-08-04

    On the basis of experiments carried out with controlled amounts of residual oxygen and water, or by using oxygen-isotope-labeled Ti(18) O2 as the photocatalyst, we demonstrate that (18) Os atoms behave as real catalytic species in the photo-oxidation of acetonitrile-dissolved aromatic compounds such as benzene, phenol, and benzaldehyde with TiO2 . The experimental evidence allows a terminal-oxygen indirect electron-transfer (TOIET) mechanism to be proposed, which is a new pathway that involves the trapping of free photogenerated valence-band holes at Os species and their incorporation into the reaction products, with simultaneous generation of oxygen vacancies at the TiO2 surface and their subsequent healing with oxygen atoms from either O2 or H2 O molecules that are dissolved in the liquid phase. According to the TOIET mechanism, the TiO2 surface is not considered to remain stable, but is continuously changing in the course of the photocatalytic reaction, challenging earlier interpretations of TiO2 photocatalytic phenomena.

  18. Mapping chemical/structural order in double perovskite Sr2-xGdxMnTiO6 by atomic resolution electron microscopy

    Science.gov (United States)

    Alvarez, Inmaculada; Biskup, Neven; Lopez, Maria; Garcia-Hernandez, Mar; Veiga, Luisa; Varela, Maria; UCM Collaboration; ORNL Collaboration; CSIC Collaboration

    2013-03-01

    We report on visualizing the chemical and structural order of double perovskite Sr2-xGdxMnTiO6. The antisite disorder of Mn and Ti is detected even at atomic scale at all x, resulting in Mn-rich and Ti-rich regions. For x ?0.75, the majority of manganese ions are in Mn3+ state and are centered in Jahn-Teller distorted MnO6octahedra. The Fourier transformation of atomic resolution images along the [110] zone axis reveals a superstructure that corresponds to the tilting of oxygen octahedra and that doubles the unit cell along [001]c. This superstructure is spatially inhomogeneous and coincides with the regions where B-site ion (Mn/Ti) is displaced along the [110] direction. We discuss these findings in the frame of possible local ferroelectricity and in the light of strong electroresistance observed in Sr1.25Gd0.75MnTiO6. Research at ORNL supported by the U.S. DOE-BES, Materials Sciences and Engineering Division, and also by ORNL's ShaRE User Program (sponsored by DOE-BES). Research at UCM supported by the ERC Starting Investigator Award and MAT2010-20117.

  19. Atomic layer epitaxy of Ruddlesden-Popper SrO(SrTiO{sub 3}){sub n} films by means of metalorganic aerosol deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jungbauer, M.; Hühn, S.; Moshnyaga, V. [Erstes Physikalisches Institut, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Egoavil, R.; Tan, H.; Verbeeck, J.; Van Tendeloo, G. [EMAT, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp (Belgium)

    2014-12-22

    We report an atomic layer epitaxial growth of Ruddlesden-Popper (RP) thin films of SrO(SrTiO{sub 3}){sub n} (n = ∞, 2, 3, 4) by means of metalorganic aerosol deposition (MAD). The films are grown on SrTiO{sub 3}(001) substrates by means of a sequential deposition of Sr-O/Ti-O{sub 2} atomic monolayers, monitored in-situ by optical ellipsometry. X-ray diffraction and transmission electron microscopy (TEM) reveal the RP structure with n = 2–4 in accordance with the growth recipe. RP defects, observed by TEM in a good correlation with the in-situ ellipsometry, mainly result from the excess of SrO. Being maximal at the film/substrate interface, the SrO excess rapidly decreases and saturates after 5–6 repetitions of the SrO(SrTiO{sub 3}){sub 4} block at the level of 2.4%. This identifies the SrTiO{sub 3} substrate surface as a source of RP defects under oxidizing conditions within MAD. Advantages and limitations of MAD as a solution-based and vacuum-free chemical deposition route were discussed in comparison with molecular beam epitaxy.

  20. Plasma synthesis of photocatalytic TiO x thin films

    Science.gov (United States)

    Sirghi, L.

    2016-06-01

    The development of efficient photocatalytic materials is promising technology for sustainable and green energy production, fabrication of self-cleaning, bactericidal, and super hydrophilic surfaces, CO2 photoreduction, and decomposition of toxic pollutants in air and water. Semiconductors with good photocatalytic activity have been known for four decades and they are regarded as promising candidates for these new technologies. Low-pressure discharge plasma is one of the most versatile technologies being used for the deposition of photocatalytic semiconductor thin films. This article reviews the main results obtained by the author in using low-pressure plasma for synthesis of TiO x thin films with applications in photocatalysis. Titanium dioxide thin films were obtained by radio frequency magnetron sputtering deposition, plasma enhanced chemical vapour deposition, and high power impulse magnetron sputtering deposition. The effects of the plasma deposition method, plasma parameters, film thickness and substrate on the film structure, chemical composition and photocatalytic activity are investigated. The photocatalytic activity of plasma synthesised TiO x thin films was estimated by UV light induced hydrophilicity. Measurements of photocurrent decay in TiO x thin films in vacuum and air showed that the photocatalytic activity is closely connected to the production, recombination and availability for surface reactions of photo-generated charge carriers. The photocatalytic activity of TiO x thin films was investigated at nanoscale by atomic force microscopy. Microscopic regions of different hydrophilicity on UV light irradiated films are discriminated by AFM atomic force microscopy measurements of adhesion and friction force.

  1. Titanium atoms dimerization phenomenon and magnetic properties of titanium-antisite (TiO) and chromium doped rutile TiO2, ab-initio calculation

    Science.gov (United States)

    Zarhri, Z.; Ziat, Y.; El Rhazouani, O.; Benyoussef, A.; Elkenz, A.

    2016-07-01

    The ab-initio calculations based on the Korringa Kohn Rostoker approximation approach combined with coherent potential approximation (KKR-CPA), were used to study the magnetic properties of the titanium anti-site (TiO) and chromium (Cr) doped TiO2. In the considered systems, we used different concentrations for TiO defect and Cr doping. In TiO2(0.98)(TiO)0.02, the obtained results indicate that TiO is a donor having half-metal behavior. TiO[3d] band is located at the Fermi level, although isn't 100% polarized, the ferromagnetic (FM) state is verified as being more stable than disordered local moment (DLM) state. For Ti0.98Cr0.02O2 the Cr doping introduced new states which give the material half-metallic feature. The majority spin of Cr impurities are located at the Fermi level and the conduction electrons around the Fermi level are 100% spin polarized. This indicates the stability of (FM) state. Moreover, in Ti0.98Cr0.02O2(0.98)(TiO)0.02, the top of the valence band is shifted to lower energy compared to pure TiO2, and the n-type of TiO2 is verified. The majority spin of Cr[3d] are located at 0.025 Ry close to the Fermi level. The predicted Curie temperatures (Tc) were calculated using the mean field approximation (MFA) and we predicted that TiO defect in Cr doped TiO2 makes Tc higher. This kind of defect makes the material useful for spinotronics's applications and devices.

  2. Dye-sensitized solar cell based on optically transparent TiO{sub 2} nanocrystalline electrode prepared by atomized spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Bandara, H.M.N., E-mail: hmnb@pdn.ac.l [Department of Chemistry, University of Peradeniya, Peradeniya (Sri Lanka); Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan); Rajapakse, R.M.G. [Department of Chemistry, University of Peradeniya, Peradeniya (Sri Lanka); Murakami, K. [Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan); Kumara, G.R.R.A.; Anuradha Sepalage, G. [Department of Chemistry, University of Peradeniya, Peradeniya (Sri Lanka)

    2011-10-30

    Highlights: > Transparent TiO{sub 2} films were prepared by the atomized spray pyrolysis method. > These films contain 3-5 nm discrete particles, interconnected to give a crack-free thin film structure. > Dye-absorption of the TiO{sub 2} film is 2.16 times higher than those used in conventional DSCs. > Conversion efficiency of 8.2% can be achieved with 1000 W m{sup -2} irradiation. - Abstract: Preparation of crack-free thin films of interconnected and non-agglomerated TiO{sub 2} nanoparticles on electronically conducting fluorine doped tin oxide surfaces is instrumental in designing and developing transparent dye-sensitized solar cells (DSCs). A novel technique called 'Atomized Spray Pyrolysis' (ASP) has been designed and developed to achieve such perfectly transparent thin films. Optical transmittance of TiO{sub 2} films produced on FTO surface by this ASP method has been compared with those obtained by doctor-blading and by hand spray methods and found that the atomized spray pyrolysis technique give films with high transparency. Dye adsorption per gram of TiO{sub 2} is 2.16 times higher in the sample produced by the ASP method when compared to the film produced by the hand spray method and is 1.60 times higher than that produced by the doctor-blading method using a commercially available TiO{sub 2} nanocrystalline paste. SEM studies show the presence of interconnected discrete particles in the film produced by the ASP method. The fill factor (ff) remains almost constant for the cells with thickness from 6 {mu}m to 13 {mu}m but the highest photovoltage and photocurrent were found in {approx}10 {mu}m film based DSC which gave 8.2% conversion efficiency at AM 1.5 irradiation for cells of 0.25 cm{sup 2} active area.

  3. Surface modification of silicon-containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Jin, Yoonyoung; Desta, Yohannes; Goettert, Jost; Lee, G. S.; Ajmera, P. K.

    2005-07-01

    Surface modification of silicon-containing fluorocarbon (SiCF) films achieved by wet chemical treatments and through x-ray irradiation is examined. The SiCF films were prepared by plasma-enhanced chemical vapor deposition, using gas precursors of tetrafluoromethane and disilane. As-deposited SiCF film composition was analyzed by x-ray photoelectron spectroscopy. Surface modification of SiCF films utilizing n-lithiodiaminoethane wet chemical treatment is discussed. Sessile water-drop contact angle changed from 95°+/-2° before treatment to 32°+/-2° after treatment, indicating a change in the film surface characteristics from hydrophobic to hydrophilic. For x-ray irradiation on the SiCF film with a dose of 27.4 kJ/cm3, the contact angle of the sessile water drop changed from 95°+/-2° before radiation to 39°+/-3° after x-ray exposure. The effect of x-ray exposure on chemical bond structure of SiCF films is studied using Fourier transform infrared measurements. Electroless Cu deposition was performed to test the applicability of the surface modified films. The x-ray irradiation method offers a unique advantage in making possible surface modification in a localized area of high-aspect-ratio microstructures. Fabrication of a Ti-membrane x-ray mask is introduced here for selective surface modification using x-ray irradiation.

  4. New oxygen radical source using selective sputtering of oxygen atoms for high rate deposition of TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Yasuda, Yoji; Lei, Hao; Hoshi, Yoichi [Department of Electronics and Information Technology, Tokyo Polytechnic University, Kanagawa 243-0297 (Japan); State Key Laboratory for Corrosion and Protection, Surface Engineering of Materials Division, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Department of Electronics and Information Technology, Tokyo Polytechnic University, Kanagawa 243-0297 (Japan)

    2012-11-15

    We have developed a new oxygen radical source based on the reactive sputtering phenomena of a titanium target for high rate deposition of TiO{sub 2} films. In this oxygen radical source, oxygen radicals are mainly produced by two mechanisms: selective sputter-emission of oxygen atoms from the target surface covered with a titanium oxide layer, and production of high-density oxygen plasma in the space near the magnetron-sputtering cathode. Compared with molecular oxygen ions, the amount of atomic oxygen radicals increased significantly with an increase in discharge current so that atomic oxygen radicals were mainly produced by this radical source. It should be noted that oxygen atoms were selectively sputtered from the target surface, and titanium atoms sputter-emitted from the target cathode were negligibly small. The amount of oxygen radicals supplied from this radical source increased linearly with increasing discharge current, and oxygen radicals of 1 Multiplication-Sign 10{sup 15} atoms/s/cm{sup 2} were supplied to the substrate surface at a discharge current of 1.2 A. We conclude that our newly developed oxygen radical source can be a good tool to achieve high rate deposition and to control the structure of TiO{sub 2} films for many industrial design applications.

  5. c(4 × 2) and related structural units on the SrTiO3(001) surface: scanning tunneling microscopy, density functional theory, and atomic structure.

    Science.gov (United States)

    Becerra-Toledo, A E; Marshall, M S J; Castell, M R; Marks, L D

    2012-06-07

    Density functional theory is used to simulate high-bias, constant-current scanning tunneling micrographs for direct comparison with experimental images. Coupled to previous spectroscopic data, these simulations are used to determine the atomic structure of Ti-rich nanostructures on strontium titanate (001) surfaces. These nanostructures have three consecutive TiO(x) surface layers and exploit the distinctive structural motif of the c(4 × 2) reconstruction as their main building block. A structural model of a characteristic triline defect is also proposed.

  6. Morphology and crystallinity control of ultrathin TiO2 layers deposited on carbon nanotubes by temperature-step atomic layer deposition

    Science.gov (United States)

    Guerra-Nuñez, Carlos; Zhang, Yucheng; Li, Meng; Chawla, Vipin; Erni, Rolf; Michler, Johann; Park, Hyung Gyu; Utke, Ivo

    2015-06-01

    Carbon nanotubes (CNTs) coated with titanium oxide (TiO2) have generated considerable interest over the last decade and become a promising nanomaterial for a wide range of energy applications. The efficient use of the outstanding electrical properties of this nanostructure relies heavily on the quality of the interface and the thickness and morphology of the TiO2 layer. However, complete surface coverage of the chemically inert CNTs and appropriate control of the morphology of the TiO2 layer have not been achieved so far. Here, we report a new strategy to obtain ultrathin TiO2 coatings deposited by ``Temperature-step'' Atomic Layer Deposition (TS-ALD) with complete surface coverage of non-functionalized multiwall carbon nanotubes (MWCNTs) and controlled morphology and crystallinity of the TiO2 film. This strategy consists of adjusting the temperature during the ALD deposition to obtain the desired morphology. Complete coverage of long non-functionalized MWCNTs with conformal anatase layers was obtained by using a low temperature of 60 °C during the nucleation stage followed by an increase to 220 °C during the growth stage. This resulted in a continuous and amorphous TiO2 layer, covered with a conformal anatase coating. Starting with the deposition at 220 °C and reducing to 60 °C resulted in sporadic crystal grains at the CNT/TiO2 interface covered with an amorphous TiO2 layer. The results were accomplished through an extensive study of nucleation and growth of titanium oxide films on MWCNTs, of which a detailed characterization is presented in this work.Carbon nanotubes (CNTs) coated with titanium oxide (TiO2) have generated considerable interest over the last decade and become a promising nanomaterial for a wide range of energy applications. The efficient use of the outstanding electrical properties of this nanostructure relies heavily on the quality of the interface and the thickness and morphology of the TiO2 layer. However, complete surface coverage of the

  7. AAO-assisted synthesis of highly ordered, large-scale TiO2 nanowire arrays via sputtering and atomic layer deposition.

    Science.gov (United States)

    Yao, Zhao; Wang, Cong; Li, Yang; Kim, Nam-Young

    2015-01-01

    Highly ordered nanoporous anodic aluminum oxide (AAO) thin films were fabricated in oxalic acid under a constant voltage via a two-step anodization process. To investigate the high-aspect-ratio (7.5:1) filling process, both sputtering and atomic layer deposition (ALD) were used to form TiO2 nanowires. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images indicated that mushroom-like TiO2 structures were sputtered onto the AAO template surface, and the ALD-coated TiO2 exhibited fine filling results and clear crystal grain boundaries. Large-scale and free-standing TiO2 nanowire arrays were liberated by selectively removing the aluminum substrate and AAO template via a wet etching process with no collapsing or agglomeration after the drying process. ALD-deposited TiO2 nanowire arrays that were 67 nm in diameter and 400 nm high were transferred from the AAO template. The ALD process enabled the rapid, simple synthesis of highly ordered TiO2 nanowire arrays with desired parameters such as diameter, density, and thickness determined using diverse AAO templates.

  8. Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition.

    Science.gov (United States)

    Wang, Wei-Cheng; Tsai, Meng-Chen; Yang, Jason; Hsu, Chuck; Chen, Miin-Jang

    2015-05-20

    In this study, efficient nanotextured black silicon (NBSi) solar cells composed of silicon nanowire arrays and an Al2O3/TiO2 dual-layer passivation stack on the n(+) emitter were fabricated. The highly conformal Al2O3 and TiO2 surface passivation layers were deposited on the high-aspect-ratio surface of the NBSi wafers using atomic layer deposition. Instead of the single Al2O3 passivation layer with a negative oxide charge density, the Al2O3/TiO2 dual-layer passivation stack treated with forming gas annealing provides a high positive oxide charge density and a low interfacial state density, which are essential for the effective field-effect and chemical passivation of the n(+) emitter. In addition, the Al2O3/TiO2 dual-layer passivation stack suppresses the total reflectance over a broad range of wavelengths (400-1000 nm). Therefore, with the Al2O3/TiO2 dual-layer passivation stack, the short-circuit current density and efficiency of the NBSi solar cell were increased by 11% and 20%, respectively. In conclusion, a high efficiency of 18.5% was achieved with the NBSi solar cells by using the n(+)-emitter/p-base structure passivated with the Al2O3/TiO2 stack.

  9. Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition.

    Science.gov (United States)

    Sharma, Uttam; Chauhan, Sachin S.; Sharma, Jayshree; Sanyasi, A. K.; Ghosh, J.; Choudhary, K. K.; Ghosh, S. K.

    2016-10-01

    The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS.

  10. Atomic force microscopy analysis of different surface treatments of Ti dental implant surfaces

    Science.gov (United States)

    Bathomarco, Ti R. V.; Solorzano, G.; Elias, C. N.; Prioli, R.

    2004-06-01

    The surface of commercial unalloyed titanium, used in dental implants, was analyzed by atomic force microscopy. The morphology, roughness, and surface area of the samples, submitted to mechanically-induced erosion, chemical etching and a combination of both, were compared. The results show that surface treatments strongly influence the dental implant physical and chemical properties. An analysis of the length dependence of the implant surface roughness shows that, for scan sizes larger than 50 μm, the average surface roughness is independent of the scanning length and that the surface treatments lead to average surface roughness in the range of 0.37 up to 0.48 μm. It is shown that the implant surface energy is sensitive to the titanium surface area. As the area increases there is a decrease in the surface contact angle.

  11. Atomic force microscopy analysis of different surface treatments of Ti dental implant surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Bathomarco, R.V.; Solorzano, G.; Elias, C.N.; Prioli, R

    2004-06-30

    The surface of commercial unalloyed titanium, used in dental implants, was analyzed by atomic force microscopy. The morphology, roughness, and surface area of the samples, submitted to mechanically-induced erosion, chemical etching and a combination of both, were compared. The results show that surface treatments strongly influence the dental implant physical and chemical properties. An analysis of the length dependence of the implant surface roughness shows that, for scan sizes larger than 50 {mu}m, the average surface roughness is independent of the scanning length and that the surface treatments lead to average surface roughness in the range of 0.37 up to 0.48 {mu}m. It is shown that the implant surface energy is sensitive to the titanium surface area. As the area increases there is a decrease in the surface contact angle.

  12. Atomical simulations of structural changes of a melted TiAl alloy particle on TiAl (001) substrate%熔融TiAl合金纳米粒子在TiAl(001)基底表面凝结过程中微观结构演变的原子尺度模拟∗

    Institute of Scientific and Technical Information of China (English)

    钱泽宇; 张林

    2015-01-01

    采用基于嵌入原子方法的分子动力学方法模拟了附着于TiAl合金(001)面的TiAl合金纳米粒子在不同温度下的原子堆积结构演变。在模拟中,熔融态(1500 K)的纳米粒子先被放置在温度分别为1100,1000,900,···,200和100 K的基体(001)面,随后急冷降温至基体温度。通过逐层分析粒子内和基体表面的原子排列情况,发现温度主要影响粒子内的原子堆积结构。当基体温度很高时,粒子内除了靠近基体的几个原子层外,其他区域内均未形成有序的原子堆积结构。随基体温度降低,粒子内大部分原子逐渐形成了有序的原子堆积结构,且粒子内出现了一个以基体(001)晶面为底面、以基体[101],[¯101],[011],[0¯11]晶向为轴的近四棱锥形内区域,此区域内外的原子均呈有序排列,但原子面的取向不同,因而形成了明显的界面。随基体温度进一步降低,这个内区域仍然存在但其体积不断减小,同时在纳米粒子顶部有越来越多的原子再次呈现无序排列,使此内区域愈加难以辨别。%Atomic packing structures of a melted TiAl alloy nanoparticle on TiAl(001) substrate at different temperatures are investigated by molecular dynamic simulation within the framework of embedded atom method. In order to obtain a melted TiAl alloy nanoparticle, a larger TiAl alloy bulk in nano-size is initially constructed, subsequently it is heated up to 1500 K and finally melted. A smaller sphere is extracted from the center of the melted bulk to serve as the melted nanoparticle. Periodic boundary conditions are employed in the x and y directions when constructing the sheet-like TiAl alloy substrate. In this simulation, the melted nanoparticle at 1500 K is laid on a TiAl(001) substrate, separately, at 1100, 1000, 900, · · · , 200 and 100 K as integral systems, and then they experience rapid solidification process. With the analysis of atomic arrangements of the nanoparticle and

  13. Atomically flat interface between a single-terminated LaAlO3 substrate and SrTiO3 thin film is insulating

    Directory of Open Access Journals (Sweden)

    Z. Q. Liu

    2012-03-01

    Full Text Available The surface termination of (100-oriented LaAlO3 (LAO single crystals was examined by atomic force microscopy and optimized to produce a single-terminated atomically flat surface by annealing. Then the atomically flat STO film was achieved on a single-terminated LAO substrate, which is expected to be similar to the n-type interface of two-dimensional electron gas (2DEG, i.e., (LaO-(TiO2. Particularly, that can serve as a mirror structure for the typical 2DEG heterostructure to further clarify the origin of 2DEG. This newly developed interface was determined to be highly insulating. Additionally, this study demonstrates an approach to achieve atomically flat film growth based on LAO substrates.

  14. Atomic substitution effects on the structural and vibrational properties of NixPb1-xTiO3: X-ray diffraction and Raman scattering investigations

    Directory of Open Access Journals (Sweden)

    R. C. da Costa

    2015-07-01

    Full Text Available The effects of the atomic substitution of Pb by Ni in the PbTiO3 ferroelectric perovskite on the vibrational and structural properties was studied using x-ray diffraction and Raman scattering. It was observed that for Ni concentrations between 0.0 and 0.4, there is the formation of a solid solution with reduction of the Raman wavenumber of the E(TO1 soft mode and the tetragonallity factor, which influence directly the temperature of the tetragonal ferroelectric to cubic paraelectric phase transition, the Curie temperature. For concentrations greater than 0.4, it is observed the formation of a PbTiO3 and NiTiO3 composite, denounced by the recovering of the both, tetragonallity factor and the E(TO1 soft mode wavenumber. The values of the Curie temperatures were estimated by the Raman scattering measurements for temperatures ranging from 300 to 950 K.

  15. Atomic Layer Deposition Al2O3 Coatings Significantly Improve Thermal, Chemical, and Mechanical Stability of Anodic TiO2 Nanotube Layers

    Science.gov (United States)

    2017-01-01

    We report on a very significant enhancement of the thermal, chemical, and mechanical stability of self-organized TiO2 nanotubes layers, provided by thin Al2O3 coatings of different thicknesses prepared by atomic layer deposition (ALD). TiO2 nanotube layers coated with Al2O3 coatings exhibit significantly improved thermal stability as illustrated by the preservation of the nanotubular structure upon annealing treatment at high temperatures (870 °C). In addition, a high anatase content is preserved in the nanotube layers against expectation of the total rutile conversion at such a high temperature. Hardness of the resulting nanotube layers is investigated by nanoindentation measurements and shows strongly improved values compared to uncoated counterparts. Finally, it is demonstrated that Al2O3 coatings guarantee unprecedented chemical stability of TiO2 nanotube layers in harsh environments of concentrated H3PO4 solutions. PMID:28291942

  16. Application of soft X-ray reflectometry for analysis of underlayer influence on structure of atomic-layer deposited SrTi{sub x}O{sub y} films

    Energy Technology Data Exchange (ETDEWEB)

    Filatova, E.O., E-mail: feo@ef14131.spb.edu [Institute of Physics, St-Petersburg State University, St-Petersburg 198504 (Russian Federation); Kozhevnikov, I.V. [Institute of Crystallography, Moscow 119333 (Russian Federation); Sokolov, A.A.; Konashuk, A.S. [Institute of Physics, St-Petersburg State University, St-Petersburg 198504 (Russian Federation); Schaefers, F. [Helmholtz-Zentrum Berlin, BESSY II, Albert Einstein Str. 15, 12489 Berlin (Germany); Popovici, M. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Afanas’ev, V.V. [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, 3001 Leuven (Belgium)

    2014-10-15

    Graphical abstract: - Highlights: • Density of SrTiO{sub 3} films depends on underlayer material in SrTiO{sub 3}/B/Si-ALD systems. • Interface is very abrupt for the sample prepared on Si{sub 3}N{sub 4} underlayer. • HfO{sub 2} underlayer leads to formation of wide interface. • SXRR emerges as a tool of atomic analysis at sub-nanometer scale. - Abstract: We explored the possibility to quantify the atomic in-depth distributions by using the energy-dependent soft X-ray reflectivity (SXRR) measurements, in particular, the possibility to obtain the profiles of low-Z elements [C, N, O, Si] in heterostructures containing high concentration of higher-Z atoms [Ti, Sr, Hf]. We have shown that the SXRR technique allows one not only to quantify the atomic composition of the Sr-rich SrTi{sub x}O{sub y} insulators grown on (1 0 0)Si by the Atomic Layer Deposition method but also to obtain atomic profiles across a few-nm thick underlayer (UL) inserted between SrTi{sub x}O{sub y} film and the Si substrate. The accuracy of atomic concentrations and densities estimated is already sufficient to trace even small variations in composition of the SrTi{sub x}O{sub y} grown by ALD on the chemically different underlayers and most it is important the composition and extension of an interfaces.

  17. What atomic resolution annular dark field imaging can tell us about gold nanoparticles on TiO{sub 2} (1 1 0)

    Energy Technology Data Exchange (ETDEWEB)

    Findlay, S.D., E-mail: scott@sigma.t.u-tokyo.ac.jp [Institute of Engineering Innovation, The University of Tokyo, Tokyo 116-0013 (Japan); Shibata, N. [Institute of Engineering Innovation, The University of Tokyo, Tokyo 116-0013 (Japan); PRESTO, Japan Science and Technology Agency, Saitama 332-0012 (Japan); Ikuhara, Y. [Institute of Engineering Innovation, The University of Tokyo, Tokyo 116-0013 (Japan); Nanostructures Research Laboratory, Japan Fine Ceramic Center, Nagoya 456-8587 (Japan); WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

    2009-11-15

    Annular dark field scanning transmission electron microscopy imaging was recently applied to a catalyst consisting of gold nanoparticles on TiO{sub 2} (1 1 0), showing directly that the gold atoms in small nanoparticles preferentially attach to specific sites on the TiO{sub 2} (1 1 0) surface. Here, through simulation, a parameter exploration of the imaging conditions which maximise the visibility of such nanoparticles is presented. Aberration correction, finite source size and profile imaging are all considered while trying to extracting the maximum amount of information from a given sample. Comment is made on the role of the thermal vibration of the atoms in the nanoparticle, the magnitude of which is generally not known a priori but which affects the visibility of the nanoparticles in this imaging mode.

  18. Understanding atomic-resolved STM images on TiO{sub 2}(110)-(1 x 1) surface by DFT calculations

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Sanchez, C; Gonzalez, C; Mendez, J; De Andres, P L; MartIn-Gago, J A; Lopez, M F [Instituto Ciencia de Materiales de Madrid (CSIC), C/Sor Juana Ines de la Cruz 3, 28049-Madrid (Spain); Jelinek, P, E-mail: mflopez@icmm.csic.es [Institute of Physics, Czech Academy of Sciences, Cukrovarnicka 10, 162 53-Prague (Czech Republic)

    2010-10-08

    We present a combination of experimental STM images and DFT calculations to understand the atomic scale contrast of features found in high-resolution STM images. Simulating different plausible structural models for the tip, we have been able to reproduce various characteristics previously reported in experimental images on TiO{sub 2}(110)-(1 x 1) under controlled UHV conditions. Our results allow us to determine the influence of different chemical and morphological tip terminations on the atomic-resolution STM images of the TiO{sub 2}(110)-(1 x 1) surface. The commonest images have been properly explained using standard models for a W tip, either clean or with a single O atom located at the apex. Furthermore, a double transfer of oxygen atoms can account for different types of bizarre atomic-resolution features occasionally seen, and not conclusively interpreted before. Importantly, we discuss how typical point-defects are imaged on this surface by different tips, namely bridging O vacancies and adsorbed OH groups.

  19. Two-Dimensional Electron Gas at SrTiO3-Based Oxide Heterostructures via Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Sang Woon Lee

    2016-01-01

    Full Text Available Two-dimensional electron gas (2DEG at an oxide interface has been attracting considerable attention for physics research and nanoelectronic applications. Early studies reported the formation of 2DEG at semiconductor interfaces (e.g., AlGaAs/GaAs heterostructures with interesting electrical properties such as high electron mobility. Besides 2DEG formation at semiconductor junctions, 2DEG was realized at the interface of an oxide heterostructure such as the LaAlO3/SrTiO3 (LAO/STO heterojunction. The origin of 2DEG was attributed to the well-known “polar catastrophe” mechanism in oxide heterostructures, which consist of an epitaxial LAO layer on a single crystalline STO substrate among proposed mechanisms. Recently, it was reported that the creation of 2DEG was achieved using the atomic layer deposition (ALD technique, which opens new functionality of ALD in emerging nanoelectronics. This review is focused on the origin of 2DEG at oxide heterostructures using the ALD process. In particular, it addresses the origin of 2DEG at oxide interfaces based on an alternative mechanism (i.e., oxygen vacancies.

  20. High-performance lithium storage based on the synergy of atomic-thickness nanosheets of TiO2(B) and ultrafine Co3O4 nanoparticles

    Science.gov (United States)

    Mujtaba, Jawayria; Sun, Hongyu; Zhao, Yanyan; Xiang, Guolei; Xu, Shengming; Zhu, Jing

    2017-09-01

    Lithium ion batteries (LIBs) are critical constituents of modern day vehicular and telecommunication technologies. Transition metal oxides and their composites have been extensively studied as potential electrode materials for LIBs. However, inefficient lithiation, poor electrical conductivity, and drastic volume change during cycling result in low reversible capacity and rapid capacity fading, and thus hinder the practical applications of those electrodes. In this work, we report a facile synthesis of a novel hierarchical composites, which consist of ultrafine Co3O4 nanoparticles uniformly dispersed on TiO2(B) nanosheets with atomic thickness (Co3O4 NPs@TiO2(B) NSs). When tested as anode material for LIBs, the Co3O4 NPs@TiO2(B) NSs sample with optimized composition shows a reversible capacity of ∼677.3 mAhg-1 after 80 cycles at a current density of 100 mAg-1. A capacity of 386.2 mAhg-1 is still achieved at 1000 mAg-1. The synergistic effect of ultrafine Co3O4 nanoparticles and atomic-thickness TiO2(B) nanosheets is responsible for the enhanced electrochemical performance.

  1. Atomic layer deposition of TiN for the fabrication of nanomechanical resonators

    Energy Technology Data Exchange (ETDEWEB)

    Nelson-Fitzpatrick, Nathan; Guthy, Csaba; Poshtiban, Somayyeh; Evoy, Stephane [Department of Electrical and Computer Engineering, University of Alberta, 2nd Floor ECERF (9107-116 Street), Edmonton, Alberta, T6G 2V4 (Canada); Finley, Eric; Harris, Kenneth D. [National Institute for Nanotechnology, 11421 Saskatchewan Drive, Edmonton, Alberta, T6G 2M9 (Canada); Worfolk, Brian J. [Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta, T6G 2G2 (Canada)

    2013-03-15

    Films of titanium nitride were grown by atomic layer deposition (ALD) over a range of temperatures from 120 Degree-Sign C to 300 Degree-Sign C, and their deposition rates were characterized by ellipsometry and reflectometry. The stress state of the films was evaluated by interferometry using a wafer bowing technique and varied from compressive (-18 MPa) to tensile (650 MPa). The crystal structure of the films was assessed by x-ray diffraction. The grain size varied with temperature in the range of 2-9 nm. The chemical composition of the films was ascertained by high-resolution x-ray photoelectron spectroscopy and showed the presence of O, Cl, and C contaminants. A mildly tensile (250 MPa) stressed film was employed for the fabrication (by electron beam lithography and reactive ion etching) of doubly clamped nanoresonator beams. The resonance frequency of resonators was assayed using an interferometric resonance testing apparatus. The devices exhibited sharp mechanical resonance peaks in the 17-25 MHz range. The uniformity and controllable deposition rate of ALD films make them ideal candidate materials for the fabrication of ultranarrow (<50 nm) nanobeam structures.

  2. Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface.

    Science.gov (United States)

    Shin, Yeong Jae; Wang, Lingfei; Kim, Yoonkoo; Nahm, Ho-Hyun; Lee, Daesu; Kim, Jeong Rae; Yang, Sang Mo; Yoon, Jong-Gul; Chung, Jin-Seok; Kim, Miyoung; Chang, Seo Hyoung; Noh, Tae Won

    2017-08-16

    With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface atomic stacking sequences. Here, taking the prototypical SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) heterostructure as a model system, we investigated the formation of different interfacial termination sequences (BaO-RuO2 or TiO2-SrO) with oxygen partial pressure (PO2) during PLD. We found that a uniform SrO-TiO2 termination sequence at the SRO/BTO interface can be achieved by lowering the PO2 to 5 mTorr, regardless of the total background gas pressure (Ptotal), growth mode, or growth rate. Our results indicate that the thermodynamic stability of the BTO surface at the low-energy kinetics stage of PLD can play an important role in surface/interface termination formation. This work paves the way for realizing termination engineering in functional oxide heterostructures.

  3. Effect of Atomic Layer Depositions (ALD)-Deposited Titanium Oxide (TiO2) Thickness on the Performance of Zr40Cu35Al15Ni10 (ZCAN)/TiO2/Indium (In)-Based Resistive Random Access Memory (RRAM) Structures

    Science.gov (United States)

    2015-08-01

    ARL-TR-7399 ● AUG 2015 US Army Research Laboratory Effect of Atomic Layer Depositions (ALD)- Deposited Titanium Oxide (TiO2...Thickness on the Performance of Zr40Cu35Al15Ni10 (ZCAN)/ TiO2/Indium (In)-Based Resistive Random Access Memory (RRAM) Structures by Matthew L Chin...Effect of Atomic Layer Depositions (ALD)- Deposited Titanium Oxide (TiO2) Thickness on the Performance of Zr40Cu35Al15Ni10 (ZCAN)/ TiO2/Indium

  4. Cell proliferation on modified DLC thin films prepared by plasma enhanced chemical vapor deposition.

    Science.gov (United States)

    Stoica, Adrian; Manakhov, Anton; Polčák, Josef; Ondračka, Pavel; Buršíková, Vilma; Zajíčková, Renata; Medalová, Jiřina; Zajíčková, Lenka

    2015-06-12

    Recently, diamondlike carbon (DLC) thin films have gained interest for biological applications, such as hip and dental prostheses or heart valves and coronary stents, thanks to their high strength and stability. However, the biocompatibility of the DLC is still questionable due to its low wettability and possible mechanical failure (delamination). In this work, DLC:N:O and DLC: SiOx thin films were comparatively investigated with respect to cell proliferation. Thin DLC films with an addition of N, O, and Si were prepared by plasma enhanced CVD from mixtures of methane, hydrogen, and hexamethyldisiloxane. The films were optically characterized by infrared spectroscopy and ellipsometry in UV-visible spectrum. The thickness and the optical properties were obtained from the ellipsometric measurements. Atomic composition of the films was determined by Rutherford backscattering spectroscopy combined with elastic recoil detection analysis and by x-ray photoelectron spectroscopy. The mechanical properties of the films were studied by depth sensing indentation technique. The number of cells that proliferate on the surface of the prepared DLC films and on control culture dishes were compared and correlated with the properties of as-deposited and aged films. The authors found that the level of cell proliferation on the coated dishes was high, comparable to the untreated (control) samples. The prepared DLC films were stable and no decrease of the biocompatibility was observed for the samples aged at ambient conditions.

  5. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Santra, T. S.; Liu, C. H.; Bhattacharyya, T. K.; Patel, P.; Barik, T. K.

    2010-06-01

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of CC, CH, SiC, and SiH bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio ID/IG. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  6. Plasma-enhanced synthesis of bactericidal quaternary ammonium thin layers on stainless steel and cellulose surfaces.

    Science.gov (United States)

    Jampala, Soujanya N; Sarmadi, M; Somers, E B; Wong, A C L; Denes, F S

    2008-08-19

    We have investigated bottom-up chemical synthesis of quaternary ammonium (QA) groups exhibiting antibacterial properties on stainless steel (SS) and filter paper surfaces via nonequilibrium, low-pressure plasma-enhanced functionalization. Ethylenediamine (ED) plasma under suitable conditions generated films rich in secondary and tertiary amines. These functional structures were covalently attached to the SS surface by treating SS with O 2 and hexamethyldisiloxane plasma prior to ED plasma treatment. QA structures were formed by reaction of the plasma-deposited amines with hexyl bromide and subsequently with methyl iodide. Structural compositions were examined by electron spectroscopy for chemical analysis and Fourier transform infrared spectroscopy, and surface topography was investigated with atomic force microscopy and water contact angle measurements. Modified SS surfaces exhibited greater than a 99.9% decrease in Staphylococcus aureus counts and 98% in the case of Klebsiella pneumoniae. The porous filter paper surfaces with immobilized QA groups inactivated 98.7% and 96.8% of S. aureus and K. pneumoniae, respectively. This technique will open up a novel way for the synthesis of stable and very efficient bactericidal surfaces with potential applications in development of advanced medical devices and implants with antimicrobial surfaces.

  7. FTIR Characterization of Fluorine Doped Silicon Dioxide Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Peng-Fei; DING Shi-Jin; ZHANG Wei; ZHANG Jian-Yun; WANGJi-Tao; WEI William Lee

    2000-01-01

    Fluorine doped silicon dioxide (SiOF) thin films have been prepared by plasma enhanced chemical vapor depo sition. The Fourier transform infrared spectrometry (FTIR) spectra of SiOF films are deliberated to reveal the structure change of SiO2 and the mechanism of dielectric constant reduction after doping fluorine. When F is doped in SiO2 films, the Si-O stretching absorption peak will have a blue-shift due to increase of the partial charge of the O atom. The FTIR spectra indicate that some Si-OH components in the thin film can be removed after doping fluorine. These changes reduce the ionic and orientational polarization, and result in the reduction in dielectric constant of the film. According to Gaussian fitting, it is found that the Si-F2 bonds will appear in the SiOF film with increase of the fluorine content. The Si-F2 structures are liable to react with water, and cause the same increase of absorbed moisture in the film.

  8. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    Science.gov (United States)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics. The PECVD technology is inherently multiscale, from macroscale processes in the chemical reactor to atomic-scale surface chemistry. Our macroscale model is based on Navier-Stokes equations for a transient laminar flow of a compressible chemically reacting gas mixture, together with the mass transfer and energy balance equations, Poisson equation for electric potential, electrons and ions balance equations. The chemical kinetics model includes 24 species and 58 reactions: 37 in the gas phase and 21 on the surface. A deposition model consists of three stages: adsorption to the surface, diffusion along the surface and embedding of products into the substrate. A new model has been validated on experimental results obtained with the "Plasmalab System 100" reactor. We present the mathematical model and simulation results investigating the influence of flow rate and source gas proportion on silicon nitride film growth rate and chemical composition.

  9. Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LU Wan-bing; YU Wei; WU Li-ping; CUI Shuang-kui; FU Guang-sheng

    2006-01-01

    Hydrogenated nanocrystalline silicon carbide (SiC) thin films were deposited on the single-crystal silicon substrate using the helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy (AFM), the Fourier transform infrared absorption (FTIR) and the transmission electron microscopy (TEM). The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmission electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC (approximately 5.4 nm), and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.

  10. Wetting behaviour of carbon nitride nanostructures grown by plasma enhanced chemical vapour deposition technique

    Science.gov (United States)

    Ahmad Kamal, Shafarina Azlinda; Ritikos, Richard; Abdul Rahman, Saadah

    2015-02-01

    Tuning the wettability of various coating materials by simply controlling the deposition parameters is essential for various specific applications. In this work, carbon nitride (CNx) films were deposited on silicon (1 1 1) substrates using radio-frequency plasma enhanced chemical vapour deposition employing parallel plate electrode configuration. Effects of varying the electrode distance (DE) on the films' structure and bonding properties were investigated using Field emission scanning electron microscopy, Atomic force microscopy, Fourier transform infrared and X-ray photoemission spectroscopy. The wettability of the films was analyzed using water contact angle measurements. At high DE, the CNx films' surface was smooth and uniform. This changed into fibrous nanostructures when DE was decreased. Surface roughness of the films increased with this morphological transformation. Nitrogen incorporation increased with decrease in DE which manifested the increase in both relative intensities of Cdbnd N to Cdbnd C and Nsbnd H to Osbnd H bonds. sp2-C to sp3-C ratio increased as DE decreased due to greater deformation of sp2 bonded carbon at lower DE. The films' characteristics changed from hydrophilic to super-hydrophobic with the decrease in DE. Roughness ratio, surface porosity and surface energy calculated from contact angle measurements were strongly dependent on the morphology, surface roughness and bonding properties of the films.

  11. Native Oxide Transport and Removal During Atomic Layer Deposition of TiO2 Films on GaAs(100) Surfaces.

    Science.gov (United States)

    Henegar, Alex J; Cook, Andrew J; Dang, Phillip; Gougousi, Theodosia

    2016-01-27

    In this work, we studied the evolution and transport of the native oxides during the atomic layer deposition (ALD) of TiO2 on GaAs(100) from tetrakis dimethyl amino titanium and H2O. Arsenic oxide transport through the TiO2 film and removal during the ALD process was investigated using transmission Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Experiments were designed to decouple these processes by utilizing their temperature dependence. A 4 nm TiO2 layer was initially deposited on a native oxide surface at 100 °C. Ex situ XPS confirmed that this step disturbed the interface minimally. An additional 3 nm TiO2 film was subsequently deposited at 150 to 250 °C with and without an intermediate thermal treatment step at 250 °C. Arsenic and gallium oxide removal was confirmed during this second deposition, leading to the inevitable conclusion that these oxides traversed at least 4 nm of film so as to react with the precursor and its surface reaction/decomposition byproducts. XPS measurements confirmed the relocation of both arsenic and gallium oxides from the interface to the bulk of the TiO2 film under normal processing conditions. These results explain the continuous native oxide removal observed for alkyl-amine precursor-based ALD processes on III-V surfaces and provide further insight into the mechanisms of film growth.

  12. Dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Bhartiya, S. [Laser Materials Development & Devices Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Gupta, M. [UGC-DAE Consortium for Scientific Research, Indore 452 017 (India)

    2016-01-25

    We report on the dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers having well-defined and spatially-localized Ti dopant profiles along film thickness. These films were grown by in situ incorporation of sub-monolayer TiO{sub x} on the growing ZnO film surface and subsequent overgrowth of thin conducting ZnO spacer layer using atomic layer deposition. Film thickness was varied in the range of ∼6–65 nm by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers of nearly identical dopant-profiles. The evolution of zero-field sheet resistance (R{sub ◻}) versus temperature with decreasing film thickness showed a metal to insulator transition. On the metallic side of the metal-insulator transition, R{sub ◻}(T) and magnetoresistance data were found to be well corroborated with the theoretical framework of electron weak localization in the diffusive transport regime. The temperature dependence of both R{sub ◻} and inelastic scattering length provided strong evidence for a smooth crossover from 2D to 3D weak localization behaviour. Results of this study provide deeper insight into the electron transport in low-dimensional n-type ZnO/TiO{sub x} stacked layers which have potential applications in the field of transparent oxide electronics.

  13. Thermo-Optical Properties of Thin-Film TiO2–Al2O3 Bilayers Fabricated by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Rizwan Ali

    2015-05-01

    Full Text Available We investigate the optical and thermo-optical properties of amorphous TiO\\(_2\\–Al\\(_2\\O\\(_3\\ thin-film bilayers fabricated by atomic layer deposition (ALD. Seven samples of TiO\\(_2\\–Al\\(_2\\O\\(_3\\ bilayers are fabricated by growing Al\\(_2\\O\\(_3\\ films of different thicknesses on the surface of TiO\\(_2\\ films of constant thickness (100 nm. Temperature-induced changes in the optical refractive indices of these thin-film bilayers are measured by a variable angle spectroscopic ellipsometer VASE\\textsuperscript{\\textregistered}. The optical data and the thermo-optic coefficients of the films are retrieved and calculated by applying the Cauchy model and the linear fitting regression algorithm, in order to evaluate the surface porosity model of TiO\\(_2\\ films. The effects of TiO\\(_2\\ surface defects on the films' thermo-optic properties are reduced and modified by depositing ultra-thin ALD-Al\\(_2\\O\\(_3\\ diffusion barrier layers. Increasing the ALD-Al\\(_2\\O\\(_3\\ thickness from 20 nm to 30 nm results in a sign change of the thermo-optic coefficient of the ALD-TiO\\(_2\\. The thermo-optic coefficients of the 100 nm-thick ALD-TiO\\(_2\\ film and 30 nm-thick ALD-Al\\(_2\\O\\(_3\\ film in a bilayer are (0.048 \\(\\pm\\ 0.134 \\(\\times 10 ^{-4} {^\\circ}\\mathrm {C}^{-1}\\ and (0.680 \\(\\pm\\ 0.313 \\(\\times 10^{-4} {^\\circ} \\mathrm {C}^{-1}\\, respectively, at a temperature \\(T = 62 ^\\circ \\mathrm{C}\\.

  14. Formation of atomically ordered and chemically selective Si—O—Ti monolayer on Si0.5Ge0.5(110) for a MIS structure via H2O2(g) functionalization

    Science.gov (United States)

    Park, Sang Wook; Choi, Jong Youn; Siddiqui, Shariq; Sahu, Bhagawan; Galatage, Rohit; Yoshida, Naomi; Kachian, Jessica; Kummel, Andrew C.

    2017-02-01

    Si0.5Ge0.5(110) surfaces were passivated and functionalized using atomic H, hydrogen peroxide (H2O2), and either tetrakis(dimethylamino)titanium (TDMAT) or titanium tetrachloride (TiCl4) and studied in situ with multiple spectroscopic techniques. To passivate the dangling bonds, atomic H and H2O2(g) were utilized and scanning tunneling spectroscopy (STS) demonstrated unpinning of the surface Fermi level. The H2O2(g) could also be used to functionalize the surface for metal atomic layer deposition. After subsequent TDMAT or TiCl4 dosing followed by a post-deposition annealing, scanning tunneling microscopy demonstrated that a thermally stable and well-ordered monolayer of TiOx was deposited on Si0.5Ge0.5(110), and X-ray photoelectron spectroscopy verified that the interfaces only contained Si—O—Ti bonds and a complete absence of GeOx. STS measurements confirmed a TiOx monolayer without mid-gap and conduction band edge states, which should be an ideal ultrathin insulating layer in a metal-insulator-semiconductor structure. Regardless of the Ti precursors, the final Ti density and electronic structure were identical since the Ti bonding is limited by the high coordination of Ti to O.

  15. Formation of atomically ordered and chemically selective Si-O-Ti monolayer on Si0.5Ge0.5(110) for a MIS structure via H2O2(g) functionalization.

    Science.gov (United States)

    Park, Sang Wook; Choi, Jong Youn; Siddiqui, Shariq; Sahu, Bhagawan; Galatage, Rohit; Yoshida, Naomi; Kachian, Jessica; Kummel, Andrew C

    2017-02-07

    Si0.5Ge0.5(110) surfaces were passivated and functionalized using atomic H, hydrogen peroxide (H2O2), and either tetrakis(dimethylamino)titanium (TDMAT) or titanium tetrachloride (TiCl4) and studied in situ with multiple spectroscopic techniques. To passivate the dangling bonds, atomic H and H2O2(g) were utilized and scanning tunneling spectroscopy (STS) demonstrated unpinning of the surface Fermi level. The H2O2(g) could also be used to functionalize the surface for metal atomic layer deposition. After subsequent TDMAT or TiCl4 dosing followed by a post-deposition annealing, scanning tunneling microscopy demonstrated that a thermally stable and well-ordered monolayer of TiOx was deposited on Si0.5Ge0.5(110), and X-ray photoelectron spectroscopy verified that the interfaces only contained Si-O-Ti bonds and a complete absence of GeOx. STS measurements confirmed a TiOx monolayer without mid-gap and conduction band edge states, which should be an ideal ultrathin insulating layer in a metal-insulator-semiconductor structure. Regardless of the Ti precursors, the final Ti density and electronic structure were identical since the Ti bonding is limited by the high coordination of Ti to O.

  16. Selective isolation of the electron or hole in photocatalysis: ZnO-TiO2 and TiO2-ZnO core-shell structured heterojunction nanofibers via electrospinning and atomic layer deposition

    Science.gov (United States)

    Kayaci, Fatma; Vempati, Sesha; Ozgit-Akgun, Cagla; Donmez, Inci; Biyikli, Necmi; Uyar, Tamer

    2014-05-01

    Heterojunctions are a well-studied material combination in photocatalysis studies, the majority of which aim to improve the efficacy of the catalysts. Developing novel catalysts begs the question of which photo-generated charge carrier is more efficient in the process of catalysis and the associated mechanism. To address this issue we have fabricated core-shell heterojunction (CSHJ) nanofibers from ZnO and TiO2 in two combinations where only the `shell' part of the heterojunction is exposed to the environment to participate in the photocatalysis. Core and shell structures were fabricated via electrospinning and atomic layer deposition, respectively which were then subjected to calcination. These CSHJs were characterized and studied for photocatalytic activity (PCA). These two combinations expose electrons or holes selectively to the environment. Under suitable illumination of the ZnO-TiO2 CSHJ, e/h pairs are created mainly in TiO2 and the electrons take part in catalysis (i.e. reduce the organic dye) at the conduction band or oxygen vacancy sites of the `shell', while holes migrate to the core of the structure. Conversely, holes take part in catalysis and electrons diffuse to the core in the case of a TiO2-ZnO CSHJ. The results further revealed that the TiO2-ZnO CSHJ shows ~1.6 times faster PCA when compared to the ZnO-TiO2 CSHJ because of efficient hole capture by oxygen vacancies, and the lower mobility of holes.Heterojunctions are a well-studied material combination in photocatalysis studies, the majority of which aim to improve the efficacy of the catalysts. Developing novel catalysts begs the question of which photo-generated charge carrier is more efficient in the process of catalysis and the associated mechanism. To address this issue we have fabricated core-shell heterojunction (CSHJ) nanofibers from ZnO and TiO2 in two combinations where only the `shell' part of the heterojunction is exposed to the environment to participate in the photocatalysis. Core and

  17. Comparison of hafnium silicate thin films on silicon (1 0 0) deposited using thermal and plasma enhanced metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rangarajan, Vishwanathan; Bhandari, Harish; Klein, Tonya M

    2002-11-01

    Hafnium silicate thin films were deposited by metal organic chemical vapor deposition (MOCVD) on Si at 400 deg. C using hafnium (IV) t-butoxide. Films annealed in O{sub 2} were compared to as-deposited films using X-ray photoelectron spectroscopy and X-ray diffraction. Hafnium silicate films were deposited by both thermal and plasma enhanced MOCVD using 2% SiH{sub 4} in He as the Si precursor. An O{sub 2} plasma increased Si content to as much as {approx}26 at.% Si. Both thermal and plasma deposited Hf silicates are amorphous as deposited, however, thermal films exhibit crystallinity after anneal. Surface roughness as measured by atomic force microscopy was found to be 1.1 and 5.1 nm for MOCVD hafnium silicate and plasma enhanced MOCVD hafnium silicate, respectively.

  18. Selective isolation of the electron or hole in photocatalysis: ZnO-TiO2 and TiO2-ZnO core-shell structured heterojunction nanofibers via electrospinning and atomic layer deposition.

    Science.gov (United States)

    Kayaci, Fatma; Vempati, Sesha; Ozgit-Akgun, Cagla; Donmez, Inci; Biyikli, Necmi; Uyar, Tamer

    2014-06-07

    Heterojunctions are a well-studied material combination in photocatalysis studies, the majority of which aim to improve the efficacy of the catalysts. Developing novel catalysts begs the question of which photo-generated charge carrier is more efficient in the process of catalysis and the associated mechanism. To address this issue we have fabricated core-shell heterojunction (CSHJ) nanofibers from ZnO and TiO2 in two combinations where only the 'shell' part of the heterojunction is exposed to the environment to participate in the photocatalysis. Core and shell structures were fabricated via electrospinning and atomic layer deposition, respectively which were then subjected to calcination. These CSHJs were characterized and studied for photocatalytic activity (PCA). These two combinations expose electrons or holes selectively to the environment. Under suitable illumination of the ZnO-TiO2 CSHJ, e/h pairs are created mainly in TiO2 and the electrons take part in catalysis (i.e. reduce the organic dye) at the conduction band or oxygen vacancy sites of the 'shell', while holes migrate to the core of the structure. Conversely, holes take part in catalysis and electrons diffuse to the core in the case of a TiO2-ZnO CSHJ. The results further revealed that the TiO2-ZnO CSHJ shows ∼1.6 times faster PCA when compared to the ZnO-TiO2 CSHJ because of efficient hole capture by oxygen vacancies, and the lower mobility of holes.

  19. Characterization of PEG-Like Macromolecular Coatings on Plasma Modified NiTi Alloy

    Science.gov (United States)

    Yang, Jun; Gao, Jiacheng; Chang, Peng; Wang, Jianhua

    2008-04-01

    A poly (ethylene glycol) (PEG-like) coating was developed to improve the biocompatibility of Nickel-Titanium (NiTi) alloy implants. The PEG-like macromolecular coatings were deposited on NiTi substrates at a room temperature of 298 K through a ECR (electron-cyclotron resonance) cold-plasma enhanced chemical vapor deposition method using tetraglyme (CH3-O-(CH2-CH2-O)4-CH3) as a precursor. A power supply with a frequency of 2.45 GHz was applied to ignite the plasma with Ar(argon) used as the carrier gas. Based on the atomic force microscopy (AFM) studies, a thin smooth coating on NiTi substrates with highly amorphous functional groups on the modified NiTi surfaces were mainly the same accumulated stoichiometric ratio of C and O with PEG. The vitro studies showed that platelet-rich plasma (PRP) adsorption on the modified NiTi alloy surface was significantly reduced. This study indicated that plasma surface modification changes the surface components of NiTi alloy and subsequently improves its biocompatibility.

  20. Characterization of PEG-Like Macromolecular Coatings on Plasma Modified NiTi Alloy

    Institute of Scientific and Technical Information of China (English)

    YANG Jun; GAO Jiacheng; CHANG Peng; WANG Jianhua

    2008-01-01

    A poly(ethylene glycol) (PEG-like) coating was developed to improve the biocompatibility of Nickel-Titanium (NiTi) alloy implants. The PEG-like macromolecular coatings were deposited on NiTi substrates at a room temperature of 298 K through a ECR (electron-cyclotron resonance) cold-plasma .enhanced chemical vapor deposition method using tetraglyme (CH3-O(CH2-CH2-O)4-CH3) as a precursor. A power supply with a frequency of 2.45 GHz was applied to ignite the plasma with Ar(argon) used as the carrier gas. Based on the atomic force microscopy (AFM) studies, a thin smooth coating on NiTi substrates with highly amorphous functional groups on the modified NiTi surfaces were mainly the same accumulated stoichiometric ratio of C and O with PEG. The vitro studies showed that platelet-rich plasma (PRP) adsorption on the modified NiTi alloy surface was significantly reduced. This study indicated that plasma surface modification changes the surface components of NiTi alloy and subsequently improves its biocompatibility.

  1. Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films

    Science.gov (United States)

    Cordova, Isvar A.; Peng, Qing; Ferrall, Isa L.; Rieth, Adam J.; Hoertz, Paul G.; Glass, Jeffrey T.

    2015-04-01

    TiO2 is an exemplary semiconductor anode material for photoelectrochemical (PEC) water-splitting electrodes due to its functionality, long-term stability in corrosive environments, nontoxicity, and low cost. In this study, TiO2 photoanodes with enhanced photocurrent density were synthesized by atomic layer deposition (ALD) of TiO2 onto a porous, transparent, and conductive fluorine-doped tin oxide nanoparticle (nanoFTO) scaffold fabricated by solution processing. The simplicity and disordered nature of the nanoFTO nanostructure combined with the ultrathin conformal ALD TiO2 coatings offers advantages including decoupling charge carrier diffusion length from optical penetration depth, increased photon absorption probability through scattering, complimentary photon absorption, and favorable interfaces for charge separation and transfer across the various junctions. We examine the effects of porosity of the nanoFTO scaffold and thickness of the TiO2 coating on PEC performance and achieve an optimal photocurrent of 0.7 mA cm-2 at 0 V vs. Ag/AgCl under 100 mW cm-2 AM 1.5 G irradiation in a 1 M KOH aqueous electrolyte. Furthermore, the fundamental mechanisms behind the improvements are characterized via cyclic voltammetry, incident photon-to-current efficiency, transient photocurrent spectroscopy, and electrochemical impedance spectroscopy and are contrasted with those of single crystal rutile TiO2 nanowires. The strategies employed in this work highlight the opportunities inherent to these types of heteronanostructures, where the lessons may be applied to improve the PEC conversion efficiencies of other promising semiconductors, such as hematite (α-Fe2O3) and other materials more sensitive to visible light.TiO2 is an exemplary semiconductor anode material for photoelectrochemical (PEC) water-splitting electrodes due to its functionality, long-term stability in corrosive environments, nontoxicity, and low cost. In this study, TiO2 photoanodes with enhanced photocurrent

  2. Plasma-enhanced microwave solid-state synthesis of cadmium sulfide: reaction mechanism and optical properties.

    Science.gov (United States)

    Du, Ke-zhao; Chaturvedi, Apoorva; Wang, Xing-zhi; Zhao, Yi; Zhang, Ke-ke; Iqbal Bakti Utama, M; Hu, Peng; Jiang, Hui; Xiong, Qi-hua; Kloc, Christian

    2015-08-14

    CdS synthesis by plasma-enhanced microwave physical vapor transport (PMPVT) has been developed in this work. The photoluminescence (PL), absorbance, Raman spectra and the mechanism of CdS crystal growth have been investigated. Furthermore, plasma-enhanced microwave chemical vapour transport (PMCVT) synthesis of CdS with additional chemical transport agents has been explored. In addition, other II-VI chalcogenides were also synthesized by PMPVT.

  3. Atomic layer deposition of photoactive CoO/SrTiO3 and CoO/TiO2 on Si(001) for visible light driven photoelectrochemical water oxidation

    Science.gov (United States)

    Ngo, Thong Q.; Posadas, Agham; Seo, Hosung; Hoang, Son; McDaniel, Martin D.; Utess, Dirk; Triyoso, Dina H.; Buddie Mullins, C.; Demkov, Alexander A.; Ekerdt, John G.

    2013-08-01

    Cobalt oxide (CoO) films are grown epitaxially on Si(001) by atomic layer deposition (ALD) using a thin (1.6 nm) buffer layer of strontium titanate (STO) grown by molecular beam epitaxy. The ALD growth of CoO films is done at low temperature (170-180 °C), using cobalt bis(diisopropylacetamidinate) and water as co-reactants. Reflection high-energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy are performed to characterize the crystalline structure of the films. The CoO films are found to be crystalline as-deposited even at the low growth temperature with no evidence of Co diffusion into Si. The STO-buffered Si (001) is used as a template for ALD growth of relatively thicker epitaxial STO and TiO2 films. Epitaxial and polycrystalline CoO films are then grown by ALD on the STO and TiO2 layers, respectively, creating thin-film heterostructures for photoelectrochemical testing. Both types of heterostructures, CoO/STO/Si and CoO/TiO2/STO/Si, demonstrate water photooxidation activity under visible light illumination. In-situ X-ray photoelectron spectroscopy is used to measure the band alignment of the two heterojunctions, CoO/STO and CoO/TiO2. The experimental band alignment is compared to electronic structure calculations using density functional theory.

  4. Atmospheric pressure plasma enhanced spatial ALD of silver

    NARCIS (Netherlands)

    Van Den Bruele, F.J.; Smets, M.; Illiberi, A.; Creyghton, Y.; Buskens, P.; Roozeboom, F.; Poodt, P.

    2014-01-01

    The authors have investigated the growth of thin silver films using a unique combination of atmospheric process elements: spatial atomic layer deposition and an atmospheric pressure surface dielectric barrier discharge plasma source. Silver films were grown on top of Si substrates with good purity a

  5. Atmospheric pressure plasma enhanced spatial ALD of silver

    NARCIS (Netherlands)

    Van Den Bruele, F.J.; Smets, M.; Illiberi, A.; Creyghton, Y.; Buskens, P.; Roozeboom, F.; Poodt, P.

    2014-01-01

    The authors have investigated the growth of thin silver films using a unique combination of atmospheric process elements: spatial atomic layer deposition and an atmospheric pressure surface dielectric barrier discharge plasma source. Silver films were grown on top of Si substrates with good purity a

  6. Preparation and Characterization of DLC Films by Twinned ECR Microwave Plasma Enhanced CVD for Microelectromechanical Systems (MEMS) Applications

    Institute of Scientific and Technical Information of China (English)

    LI Xin; TANG Zhen-an; DENG Xin-lu; SHEN Yu-xiu; DING Hai-tao

    2004-01-01

    Diamond-like carbon (DLC) films have recently been pursued as the protection of MEMS against their friction and wear.Plasma enhanced chemical vapor deposition (PECVD) technique is very attractive to prepare DLC coating for MEMS.This paper describes the preparation of DLC films using twinned electron cyclotron resonance (ECR) microwave PECVD process.Raman spectra confirmed the DLC characteristics of the films.Fourier-transform infrared (FT-IR)characterization indicates the carbon is bonded in the form sp3 and sp2 with hydrogen participating in bonding.The surface roughness of the films is as low as approximately 0.093nm measured with an atomic force microscope.A CERT microtribometer system is employed to obtain information about the scratch resistance,friction properties,and sliding wear resistance of the films.The results show the deposited DLC films have low friction and good scratch/wear resistance properties.

  7. Synthesis and characterization of TiO{sub 2}/Ag/polymer ternary nanoparticles via surface-initiated atom transfer radical polymerization

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jung Tae; Koh, Joo Hwan; Seo, Jin Ah [Department of Chemical and Biomolecular Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Cho, Yong Soo [Department of Materials Science and Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Kim, Jong Hak, E-mail: jonghak@yonsei.ac.kr [Department of Chemical and Biomolecular Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)

    2011-08-01

    We report on the novel ternary hybrid materials consisting of semiconductor (TiO{sub 2}), metal (Ag) and polymer (poly(oxyethylene methacrylate) (POEM)). First, a hydrophilic polymer, i.e. POEM, was grafted from TiO{sub 2} nanoparticles via the surface-initiated atom transfer radical polymerization (ATRP) technique. These TiO{sub 2}-POEM brush nanoparticles were used to template the formation of Ag nanoparticles by introduction of a AgCF{sub 3}SO{sub 3} precursor and a NaBH{sub 4} aqueous solution for reduction process. Successful grafting of polymeric chains from the surface of TiO{sub 2} nanoparticles and the in situ formation of Ag nanoparticles within the polymeric chains were confirmed using transmission electron microscopy (TEM), UV-vis spectroscopy, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). FT-IR spectroscopy also revealed the specific interaction of Ag nanoparticles with the C=O groups of POEM brushes. This study presents a simple route for the in situ synthesis of both metal and polymer confined within the semiconductor, producing ternary hybrid inorganic-organic nanomaterials.

  8. Butanol Dehydration over V2O5-TiO2/MCM-41 Catalysts Prepared via Liquid Phase Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Jong-Ki Jeon

    2013-04-01

    Full Text Available MCM-41 was used as a support and, by using atomic layer deposition (ALD in the liquid phase, a catalyst was prepared by consecutively loading titanium oxide and vanadium oxide to the support. This research analyzes the effect of the loading amount of vanadium oxide on the acidic characteristics and catalytic performance in the dehydration of butanol. The physical and chemical characteristics of the TiO2-V2O5/MCM-41 catalysts were analyzed using XRF, BET, NH3-TPD, XRD, Py-IR, and XPS. The dehydration reaction of butanol was performed in a fixed bed reactor. For the samples with vanadium oxide loaded to TiO2/MCM-41 sample using the liquid phase ALD method, it was possible to increase the loading amount until the amount of vanadium oxide reached 12.1 wt %. It was confirmed that the structural properties of the mesoporous silica were retained well after titanium oxide and vanadium loading. The NH3-TPD and Py-IR results indicated that weak acid sites were produced over the TiO2/MCM-41 samples, which is attributed to the generation of Lewis acid sites. The highest activity of the V2O5(12.1-TiO2/MCM-41 catalyst in 2-butanol dehydration is ascribed to it having the highest number of Lewis acid sites, as well as the highest vanadium dispersion.

  9. Co3O4-modified TiO2 nanotube arrays via atomic layer deposition for improved visible-light photoelectrochemical performance.

    Science.gov (United States)

    Huang, Bin; Yang, Wenjuan; Wen, Yanwei; Shan, Bin; Chen, Rong

    2015-01-14

    Composite Co3O4/TiO2 nanotube arrays (NTs) were fabricated via atomic layer deposition (ALD) of Co3O4 thin film onto well-aligned anodized TiO2 NTs. The microscopic morphology, composition, and interfacial plane of the composite structure were characterized by scanning electron microscopy, energy dispersion mapping, X-ray photoelectron spectra, and high-resolution transmission electron microscopy. It was shown that the ultrathin Co3O4 film uniformly coat onto the inner wall of the high aspect ratio (>100:1) TiO2 NTs with film thickness precisely controlled by the number of ALD deposition cycles. The composite structure with ∼4 nm Co3O4 coating revealed optimal photoelectrochemical (PEC) performance in the visible-light range (λ > 420 nm). The photocurrent density reaches as high as 90.4 μA/cm(2), which is ∼14 times that of the pristine TiO2 NTs and 3 times that of the impregnation method. The enhanced PEC performance could be attributed to the finely controlled Co3O4 coating layer that enhances the visible-light absorption, maintains large specific surface area to the electrolyte interface, and facilitates the charge transfer.

  10. Data set for fabrication of conformal two-dimensional TiO2 by atomic layer deposition using tetrakis (dimethylamino) titanium (TDMAT) and H2O precursors.

    Science.gov (United States)

    Zhuiykov, Serge; Akbari, Mohammad Karbalaei; Hai, Zhenyin; Xue, Chenyang; Xu, Hongyan; Hyde, Lachlan

    2017-08-01

    The data and complementary information presented hare are related to the research article of "http://dx.doi.org/10.1016/j.matdes.2017.02.016; Materials and Design 120 (2017) 99-108" [1]. The article provides data and information on the case of atomic layer deposition (ALD) of ultra-thin two-dimensional TiO2 film. The chemical structure of precursors, and the fabrication process were illustrated. The data of spectral ellipsometric measurements and the methods of calculations were presented. Data of root mean square roughness and the average roughness of the ADL TiO2 film are presented. The method of bandgap measurements and the bandgap calculation are also explained in the present data article.

  11. Highly Anti-UV Properties of Silk Fiber with Uniform and Conformal Nanoscale TiO2 Coatings via Atomic Layer Deposition.

    Science.gov (United States)

    Xiao, Xingfang; Liu, Xin; Chen, Fengxiang; Fang, Dong; Zhang, Chunhua; Xia, Liangjun; Xu, Weilin

    2015-09-30

    In this study, silk fiber was successfully modified via the application of a nanoscale titania coating using atomic layer deposition (ALD), with titanium tetraisopropoxide (TIP) and water as precursors at 100 °C. Scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscope, and field emission scanning electron microscope results demonstrated that uniform and conformal titania coatings were deposited onto the silk fiber. The thermal and mechanical properties of the TiO2 silk fiber were then investigated. The results showed that the thermal stability and mechanical properties of this material were superior to those of the uncoated substance. Furthermore, the titania ALD process provided the silk fiber with excellent protection against UV radiation. Specifically, the TiO2-coated silk fibers exhibited significant increases in UV absorbance, considerably less yellowing, and greatly enhanced mechanical properties compared with the uncoated silk fiber after UV exposure.

  12. Data set for fabrication of conformal two-dimensional TiO2 by atomic layer deposition using tetrakis (dimethylamino titanium (TDMAT and H2O precursors

    Directory of Open Access Journals (Sweden)

    Serge Zhuiykov

    2017-08-01

    Full Text Available The data and complementary information presented hare are related to the research article of “http://dx.doi.org/10.1016/j.matdes.2017.02.016; Materials and Design 120 (2017 99–108” [1]. The article provides data and information on the case of atomic layer deposition (ALD of ultra-thin two-dimensional TiO2 film. The chemical structure of precursors, and the fabrication process were illustrated. The data of spectral ellipsometric measurements and the methods of calculations were presented. Data of root mean square roughness and the average roughness of the ADL TiO2 film are presented. The method of bandgap measurements and the bandgap calculation are also explained in the present data article.

  13. Mapping Nanoscale Domains in a Sol-Gel-Derived (Pb, La) (Zr, Ti)O3 Thin Film Using Atomic Force Microscopy

    Institute of Scientific and Technical Information of China (English)

    巴龙; 舒剑; 孙平; 陆祖宏

    2003-01-01

    Local polarization of a sol-gel-derived (Pb,La)(Zr, Ti)O3 thin film is studied from its piezoelectric response measured by using atomic force microscopy. Topographic and piezoelectric images show that the domain sizes of spontaneous polarization and grain sizes are both within the range of tens to hundreds of nanometres. Nanosized domain arrays have been written in an unpoled region to realize data storage by applying pulse voltage. The results show that the domain sizes grow exponentially when the pulse duration increases.

  14. Memory programming of TiO{sub 2−x} films by Conductive Atomic Force Microscopy evidencing filamentary resistive switching

    Energy Technology Data Exchange (ETDEWEB)

    Bousoulas, P., E-mail: panbous@mail.ntua.gr [Department of Applied Physics, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 15780 Athens (Greece); Giannopoulos, J. [Department of Applied Physics, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 15780 Athens (Greece); Giannakopoulos, K.; Dimitrakis, P. [Institute of Nanoscience and Nanotechnology, NCSR “Demokritos”, Aghia Paraskevi, 15310 Athens (Greece); Tsoukalas, D. [Department of Applied Physics, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 15780 Athens (Greece)

    2015-03-30

    Highlights: • We correlate RRAM performance with C-AFM measurements. • We demonstrate resistive switching through C-AFM process. • We present evidence of filament formation. • We demonstrate resistive switching in nanoscale area. - Abstract: Resistive Random Access Memory (RRAM) with a structure Au/Ti/TiO{sub 2−x}/Au demonstrated a clear bipolar resistive switching behavior without the necessity of an initial electroforming process. The titanium oxide (TiO{sub 2−x}) thin film was deposited by reactive RF magnetron sputtering at room temperature in a controlled oxygen/argon ambient. The high density of oxygen vacancies within the film (induced by the low oxygen content) is an essential component for the formation of conducting filaments and demonstration of DC or nanosecond pulsed resistance switching, but also impose limitations for the conduction behavior of the high resistance state. Conductive Atomic Force Microscopy (C-AFM) was then employed in order to investigate the nanoscale electrical properties of our device. In situ current distribution during the SET process disclosed possible formation of conducting filaments while DC sweeping bias voltage revealed an OFF/ON switching ratio of about 200. We have also demonstrated that by using C-AFM both a low resistance state and a high resistance state can be written by bipolar voltage application imaged by corresponding patterns on the TiO{sub 2−x} current image, suggesting that oxygen ions movement at the Pt-Ir coated tip/TiO{sub 2−x} interface plays a critical role in the resistive switching phenomenon and thus correlating the macroscopic characteristics of our device with its microscopic origins. Nanoscale resistance switching is also demonstrated by programming distinct patterns on the device's current image.

  15. Eliminated Phototoxicity of TiO2 Particles by an Atomic-Layer-Deposited Al2 O3 Coating Layer for UV-Protection Applications.

    Science.gov (United States)

    Jang, Eunyong; Sridharan, Kishore; Park, Young Min; Park, Tae Joo

    2016-08-16

    We demonstrate the conformal coating of an ultrathin Al2 O3 layer on TiO2 nanoparticles through atomic layer deposition by using a specifically designed rotary reactor to eliminate the phototoxicity of the particles for cosmetic use. The ALD reactor is modified to improve the coating efficiency as well as the agitation of the particles for conformal coating. Elemental and microstructural analyses show that ultrathin Al2 O3 layers are conformally deposited on the TiO2 nanoparticles with a controlled thickness. Rhodamine B dye molecules on Al2 O3 -coated TiO2 exhibited a long life time under UV irradiation, that is, more than 2 h, compared to that on bare TiO2 , that is, 8 min, indicating mitigation of photocatalytic activity by the coated layer. The effect of carbon impurities in the film resulting from various deposition temperatures and thicknesses of the Al2 O3 layer on the photocatalytic activity are also thoroughly investigated with controlled experimental condition by using dye molecules on the surface. Our results reveal that an increased carbon impurity resulting from a low processing temperature provides a charge conduction path and generates reactive oxygen species causing the degradation of dye molecule. A thin coated layer, that is, less than 3 nm, also induced the tunneling of electrons and holes to the surface, hence oxidizing dye molecules. Furthermore, the introduction of an Al2 O3 layer on TiO2 improves the light trapping thus, enhances the UV absorption.

  16. NiCo2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors

    KAUST Repository

    Wang, Ruiqi

    2016-03-04

    Ternary transition metal oxides such as NiCo2O4 show great promise as supercapacitor electrode materials. However, the unsatisfactory rate performance of NiCo2O4 may prove to be a major hurdle to its commercial usage. Herein, we report the development of NiCo2O4@TiN core–shell nanostructures for all-solid-state supercapacitors with significantly enhanced rate capability. We demonstrate that a thin layer of TiN conformally grown by atomic layer deposition (ALD) on NiCo2O4 nanofiber arrays plays a key role in improving their electrical conductivity, mechanical stability, and rate performance. Fabricated using the hybrid NiCo2O4@TiN electrodes, the symmetric all-solid-state supercapacitor exhibited an impressive stack power density of 58.205 mW cm−3 at a stack energy density of 0.061 mWh cm−3. To the best of our knowledge, these values are the highest of any NiCo2O4-based all-solid-state supercapacitor reported. Additionally, the resulting NiCo2O4@TiN all-solid-state device displayed outstanding cycling stability by retaining 70% of its original capacitance after 20,000 cycles at a high current density of 10 mA cm−2. These results illustrate the promise of ALD-assisted hybrid NiCo2O4@TiN electrodes for sustainable and integrated energy storage applications.

  17. Ab initio calculations of the atomic and electronic structure of layered Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} structures

    Energy Technology Data Exchange (ETDEWEB)

    Piskunov, S. [Institute of Solid State Physics, University of Latvia, Kengaraga 8, LV-1063 Riga (Latvia); Kotomin, E.A. [Institute of Solid State Physics, University of Latvia, Kengaraga 8, LV-1063 Riga (Latvia) and Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart (Germany)]. E-mail: kotomin@latnet.lv; Fuks, D. [Materials Engineering Department, Ben-Gurion University of the Negev, POB 653, Beer-Sheva (Israel); Dorfman, S. [Department of Physics, Technion- Israel Institute of Technology, Haifa 32000 (Israel)

    2005-04-25

    Understanding of the atomic and electronic structure of Ba{sub c}Sr{sub 1-c}TiO{sub 3} (BST) solid solutions is important for several applications including the non-volatile ferroelectric memories (dynamic random access memory, DRAM). We present results of ab initio calculations of several spatial arrangements of Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} solid solutions based on DFT-HF B3PW hybrid method. We calculate the atomic and electronic structure, the effective charges, interatomic bond populations, the electronic density distribution, and densities of states for three layered structures with the same composition. The suggested method reproduces experimental lattice parameters of both pure BaTiO{sub 3} and SrTiO{sub 3}. The calculated optical band gaps for the pure SrTiO{sub 3} and BaTiO{sub 3} are in a good agreement with experimental data, much better than those from the standard LDA or HF calculations. In the studied BST structures with the equiatomic composition (c = 0.5) the gap is reduced by ca. 0.2 eV. The electron density maps demonstrate the covalency effects in the Ti-O bonding. The electron density near the Sr atoms is stronger localized, as compared with the Ba ions.

  18. Passivation of Al2O3 / TiO2 on monocrystalline Si with relatively low reflectance

    Science.gov (United States)

    Lu, Chun-Ti; Huang, Yu-Shiang; Liu, C. W.

    2016-06-01

    Al2O3/TiO2 stack layers deposited by the plasma-enhanced atomic layer deposition enhance photoluminescence intensity by reducing effective surface recombination velocities on both n-type and p-type monocrystalline Si. The field effect of negative oxide charges in the dielectrics is responsible for the low effective surface recombination velocity. The dependence of the effective surface recombination velocity on the photoluminescence intensity is investigated by the 2D numerical simulation. The bilayer stacks without texture also reduce the AM1.5-weighted front side reflectance to 11.8%. The field-effect passivation of Al2O3/TiO2 films is further improved by a forming gas annealing due to the additional increase of the negative oxide charge density.

  19. Atom redistribution and multilayer structure in NiTi shape memory alloy induced by high energy proton irradiation

    Science.gov (United States)

    Wang, Haizhen; Yi, Xiaoyang; Zhu, Yingying; Yin, Yongkui; Gao, Yuan; Cai, Wei; Gao, Zhiyong

    2017-10-01

    The element distribution and surface microstructure in NiTi shape memory alloys exposed to 3 MeV proton irradiation were investigated. Redistribution of the alloying element and a clearly visible multilayer structure consisting of three layers were observed on the surface of NiTi shape memory alloys after proton irradiation. The outermost layer consists primarily of a columnar-like TiH2 phase with a tetragonal structure, and the internal layer is primarily comprised of a bcc austenite phase. In addition, the Ti2Ni phase, with an fcc structure, serves as the transition layer between the outermost and internal layer. The above-mentioned phenomenon is attributed to the preferential sputtering of high energy protons and segregation induced by irradiation.

  20. Conducting LaAlO3/SrTiO3 heterointerfaces on atomically-flat substrates prepared by deionized-water

    Science.gov (United States)

    Connell, J. G.; Nichols, J.; Gruenewald, J. H.; Kim, D.-W.; Seo, S. S. A.

    2016-04-01

    We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns.

  1. Nanoindentation and AFM studies of PECVD DLC and reactively sputtered Ti containing carbon films

    Indian Academy of Sciences (India)

    A Pauschitz; J Schalko; T Koch; C Eisenmenger-Sittner; S Kvasnica; Manish Roy

    2003-10-01

    Amorphous carbon film, also known as DLC film, is a promising material for tribological application. It is noted that properties relevant to tribological application change significantly depending on the method of preparation of these films. These properties are also altered by the composition of the films. In view of this, the objective of the present work is to compare the nanoindentation and atomic force microscopy (AFM) study of diamond like carbon (DLC) film obtained by plasma enhanced chemical vapour deposition (PECVD) with the Ti containing amorphous carbon (Ti/-C : H) film obtained by unbalanced magnetron sputter deposition (UMSD). Towards that purpose, DLC and Ti/-C : H films are deposited on silicon substrate by PECVD and UMSD processes, respectively. The microstructural features and the mechanical properties of these films are evaluated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), nanoindentation and by AFM. The results show that the PECVD DLC film has a higher elastic modulus, hardness and roughness than the UMSD Ti/-C : H film. It also has a lower pull off force than Ti containing amorphous carbon film.

  2. Diffusion and interface evolution during the atomic layer deposition of TiO{sub 2} on GaAs(100) and InAs(100) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Liwang; Gougousi, Theodosia, E-mail: gougousi@umbc.edu [Department of Physics, UMBC, Baltimore, Maryland 21250 (United States)

    2016-01-15

    Atomic layer deposition is used to form TiO{sub 2} films from tetrakis dimethyl amino titanium and H{sub 2}O on native oxide GaAs(100) and InAs(100) surfaces. The evolution of the film/substrate interface is examined as a function of the deposition temperature (100–325 °C) using ex situ x-ray photoelectron spectroscopy. An increase in the deposition temperature up to 250 °C leads to enhancement of the native oxide removal. For depositions at 300 °C and above, interface reoxidation is observed during the initial deposition cycles but when the films are thicker than 3 nm, the surface oxides are removed steadily. Based on these observations, two distinct film growth regimes are identified; up to 250 °C, layer-by-layer dominates while at higher temperatures island growth takes over. Angle resolved x-ray photoelectron spectroscopy measurements performed on 3 nm TiO{sub 2} film deposited at 325 °C on both surfaces demonstrates a very important difference between the two substrates: for GaAs the native oxides remaining in the stack are localized at the interface, while for InAs(100), the indium oxides are mixed in the TiO{sub 2} film.

  3. Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Das, Gangadhar [Indus Synchrotrons Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2016-01-18

    Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.

  4. Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO2-RuO2 Alloy Schottky Contacts for Silicon Photoanodes.

    Science.gov (United States)

    Hendricks, Olivia L; Scheuermann, Andrew G; Schmidt, Michael; Hurley, Paul K; McIntyre, Paul C; Chidsey, Christopher E D

    2016-09-14

    We synthesized nanoscale TiO2-RuO2 alloys by atomic layer deposition (ALD) that possess a high work function and are highly conductive. As such, they function as good Schottky contacts to extract photogenerated holes from n-type silicon while simultaneously interfacing with water oxidation catalysts. The ratio of TiO2 to RuO2 can be precisely controlled by the number of ALD cycles for each precursor. Increasing the composition above 16% Ru sets the electronic conductivity and the metal work function. No significant Ohmic loss for hole transport is measured as film thickness increases from 3 to 45 nm for alloy compositions ≥ 16% Ru. Silicon photoanodes with a 2 nm SiO2 layer that are coated by these alloy Schottky contacts having compositions in the range of 13-46% Ru exhibit average photovoltages of 525 mV, with a maximum photovoltage of 570 mV achieved. Depositing TiO2-RuO2 alloys on nSi sets a high effective work function for the Schottky junction with the semiconductor substrate, thus generating a large photovoltage that is isolated from the properties of an overlying oxygen evolution catalyst or protection layer.

  5. Carbon nanofiber growth in plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Denysenko, I.; Ostrikov, K.; Cvelbar, U.; Mozetic, M.; Azarenkov, N. A.

    2008-10-01

    A theoretical model to describe the plasma-assisted growth of carbon nanofibers (CNFs) is proposed. Using the model, the plasma-related effects on the nanofiber growth parameters, such as the growth rate due to surface and bulk diffusion, the effective carbon flux to the catalyst surface, the characteristic residence time and diffusion length of carbon atoms on the catalyst surface, and the surface coverages, have been studied. The dependence of these parameters on the catalyst surface temperature and ion and etching gas fluxes to the catalyst surface is quantified. The optimum conditions under which a low-temperature plasma environment can benefit the CNF growth are formulated. These results are in good agreement with the available experimental data on CNF growth and can be used for optimizing synthesis of related nanoassemblies in low-temperature plasma-assisted nanofabrication.

  6. Atmospheric pressure plasma enhanced spatial ALD of silver

    Energy Technology Data Exchange (ETDEWEB)

    Bruele, Fieke J. van den, E-mail: Fieke.vandenBruele@tno.nl; Smets, Mireille; Illiberi, Andrea; Poodt, Paul [Holst Centre/TNO, High Tech Campus 31, 5656 AE Eindhoven (Netherlands); Creyghton, Yves [TNO, High Tech Campus 21, 5656 AE Eindhoven (Netherlands); Buskens, Pascal [TNO, Rondom 1, 5612 AP Eindhoven, The Netherlands and DWI Leibniz-Institut für Interaktive Materialien, Aachen (Germany); Roozeboom, Fred [TNO, High Tech Campus 21, 5656 AE Eindhoven, The Netherlands and Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)

    2015-01-15

    The authors have investigated the growth of thin silver films using a unique combination of atmospheric process elements: spatial atomic layer deposition and an atmospheric pressure surface dielectric barrier discharge plasma source. Silver films were grown on top of Si substrates with good purity as revealed by resistivity values as low as 18 μΩ cm and C- and F-levels below detection limits of energy dispersive x-ray analysis. The growth of the silver films starts through the nucleation of islands that subsequently coalesce. The authors show that the surface island morphology is dependent on surface diffusion, which can be controlled by temperature within the deposition temperature range of 100–120 °C.

  7. Hot-Wire generated atomic hydrogen and its impact on thermal ALD in $TiCl_4/NH_3$ system

    NARCIS (Netherlands)

    Van Bui, H.; Kovalgin, A.Y.; Aarnink, A.A.I.; Wolters, R.A.M.

    2013-01-01

    We present the generation of atomic hydrogen made by the dissociation of molecular hydrogen upon collision with a tungsten (W) filament kept at a high temperature (T ≈ 1600–1900◦C). We demonstrate the ability to create atomic hydrogen and to introduce it in short pulses in experiments on etching of

  8. Average and local atomic-scale structure in BaZrxTi(1-x)O3 (x = 0. 10, 0.20, 0.40) ceramics by high-energy x-ray diffraction and Raman spectroscopy.

    Science.gov (United States)

    Buscaglia, Vincenzo; Tripathi, Saurabh; Petkov, Valeri; Dapiaggi, Monica; Deluca, Marco; Gajović, Andreja; Ren, Yang

    2014-02-12

    High-resolution x-ray diffraction (XRD), Raman spectroscopy and total scattering XRD coupled to atomic pair distribution function (PDF) analysis studies of the atomic-scale structure of archetypal BaZrxTi(1-x)O3 (x = 0.10, 0.20, 0.40) ceramics are presented over a wide temperature range (100-450 K). For x = 0.1 and 0.2 the results reveal, well above the Curie temperature, the presence of Ti-rich polar clusters which are precursors of a long-range ferroelectric order observed below TC. Polar nanoregions (PNRs) and relaxor behaviour are observed over the whole temperature range for x = 0.4. Irrespective of ceramic composition, the polar clusters are due to locally correlated off-centre displacement of Zr/Ti cations compatible with local rhombohedral symmetry. Formation of Zr-rich clusters is indicated by Raman spectroscopy for all compositions. Considering the isovalent substitution of Ti with Zr in BaZrxTi1-xO3, the mechanism of formation and growth of the PNRs is not due to charge ordering and random fields, but rather to a reduction of the local strain promoted by the large difference in ion size between Zr(4+) and Ti(4+). As a result, non-polar or weakly polar Zr-rich clusters and polar Ti-rich clusters are randomly distributed in a paraelectric lattice and the long-range ferroelectric order is disrupted with increasing Zr concentration.

  9. A density functional theory study of atomic steps on stoichiometric rutile TiOsub>2sub>(110)

    DEFF Research Database (Denmark)

    Stausholm-Møller, Jess; Kristoffersen, Henrik Ho̸gh; Martinez, Umberto

    2013-01-01

    We present a detailed theoretical study of the energetics of stoichiometric steps on the (110) surface of rutile TiO2. Step structures running along the ⟨001⟩, ⟨11¯1⟩ , and ⟨11¯0⟩ directions including bulk-terminations and possible reconstructions have been considered. A robust method for extract...

  10. Forming free and ultralow-power erase operation in atomically crystal TiO2 resistive switching

    Science.gov (United States)

    Dai, Yawei; Bao, Wenzhong; Hu, Linfeng; Liu, Chunsen; Yan, Xiao; Chen, Lin; Sun, Qingqing; Ding, Shijin; Zhou, Peng; Zhang, David Wei

    2017-06-01

    Two-dimensional layered materials (2DLMs) have attracted broad interest from fundamental sciences to industrial applications. Their applications in memory devices have been demonstrated, yet much still remains to explore optimal materials and device structure for practical application. In this work, a forming-free, bipolar resistive switching behavior are demonstrated in 2D TiO2-based resistive random access memory (RRAM). Physical adsorption method is adopted to achieve high quality, continuous 2D TiO2 network efficiently. The 2D TiO2 RRAM devices exhibit superior properties such as fast switching capability (20 ns of erase operation) and extremely low erase energy consumption (0.16 fJ). Furthermore, the resistive switching mechanism is attributed to the formation and rupture of oxygen vacancies-based percolation path in 2D TiO2 crystals. Our results pave the way for the implementation of high performance 2DLMs-based RRAM in the next generation non-volatile memory (NVM) application.

  11. Plasma-assisted atomic layer deposition of TiO2 compact layers for flexible mesostructured perovskite solar cells

    NARCIS (Netherlands)

    Zardetto, V.; Di Giacomo, F.; Lucarelli, G.; Kessels, W.M.M.; Brown, T.M.; Creatore, M.

    2017-01-01

    In mesostructured perovskite solar cell devices, charge recombination processes at the interface between the transparent conductive oxide, perovskite and hole transport layer are suppressed by depositing an efficient compact TiO2 blocking layer. In this contribution we investigate the role of the

  12. Catalyst-free growth and tailoring morphology of zinc oxide nanostructures by plasma-enhanced deposition at low temperature

    Science.gov (United States)

    Chen, W. Z.; Wang, B. B.; Qu, Y. Z.; Huang, X.; Ostrikov, K.; Levchenko, I.; Xu, S.; Cheng, Q. J.

    2017-03-01

    ZnO nanostructures were grown under different deposition conditions from Zn films pre-deposited onto Si substrates in O2-Ar plasma, ignited in an advanced custom-designed plasma-enhanced horizontal tube furnace deposition system. The morphology and structure of the synthesized ZnO nanostructures were systematically and extensively investigated by scanning and transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. It is shown that the morphology of ZnO nanostructures changes from the hybrid ZnO/nanoparticle and nanorod system to the mixture of ZnO nanosheets and nanorods when the growth temperature increases, and the density of ZnO nanorods increases with the increase of oxygen flow rate. The formation of ZnO nanostructures was explained in terms of motion of Zn atoms on the Zn nanoparticle surfaces, and to the local melting of Zn nanoparticles or nanosheets. Moreover, the photoluminescence properties of ZnO nanostructures were studied, and it was revealed that the photoluminescence spectrum features two strong ultraviolet bands at about 378 and 399 nm and a series of weak blue bands within a range of 440-484 nm, related to the emissions of free excitons, near-band edge, and defects of ZnO nanostructures. The obtained results enrich our knowledge on the synthesis of ZnO-based nanostructures and contribute to the development of ZnO-based optoelectronic devices.

  13. Plasma-enhanced Chemical Vapor Deposition of Aluminum Oxide Using Ultrashort Precursor Injection Pulses

    NARCIS (Netherlands)

    Dingemans, G.; M. C. M. van de Sanden,; Kessels, W. M. M.

    2012-01-01

    An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the precurs

  14. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NARCIS (Netherlands)

    Konakov, S.A.; Krzhizhanovskaya, V.V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics.

  15. Ti-TiC-TiC/DLC gradient nano-composite film on a biomedical NiTi alloy.

    Science.gov (United States)

    Zheng, Yufeng; Liu, Dong; Liu, Xiliang; Li, Li

    2008-12-01

    Ti-TiC-TiC/diamond-like carbon (DLC) gradient nano-composite films have been prepared on NiTi alloy substrates by the technique of plasma immersion ion implantation and deposition (PIIID) combined with plasma-enhanced chemical vapor deposition (PECVD). The influence of negative bias voltage applied to the substrate (from -100 V to -500 V) on the chemical structure, microstructure, mechanical properties and corrosion resistance was investigated by Raman spectrum, x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), x-ray diffraction (XRD), friction coefficient test, scratch test, nano-indentation test and anodic polarization experiments. The Raman spectrum and XPS results showed that the doped films kept an amorphous DLC structure. TEM observation revealed that nanometer TiC particles were surrounded by the amorphous DLC. With the increase of bias voltage, the ratio of sp(2)/sp(3) first decreased, reaching a minimum value at -200 V, and then increased. The nano-indentation results showed that the hardness of the Ti-TiC-TiC/DLC gradient films reached the maximum value at -200 V when TiC particles reached the maximum content in the films. The friction coefficient test and scratch test indicated that Ti-TiC-TiC/DLC gradient films had a low friction coefficient and high bonding strength with the NiTi substrates. Combined with anodic polarization curves and SEM observation, it was found that the corrosion resistance of the Ti-TiC-TiC/DLC gradient films was much better than that of the bare NiTi alloy.

  16. Atomic control of substrate termination and heteroepitaxial growth of SrTiO sub 3 /LaAlO sub 3 films

    CERN Document Server

    Kim, D W; Choi, C; Lim, K D; Noh, T W; Lee, D R; Park, J H; Lee, K B

    2000-01-01

    The roles of substrate termination in the growth behaviors of SrTiO sub 3 (STO) films were investigated. With heat treatment and an atomic layer deposition technique, LaAlO sub 3 (LAO) substrates with two kinds of terminations, i.e., LaO- and AlO sub 2 -terminated ones, could be prepared. On top of them STO films were grown by using laser molecular beam epitaxy. In the case of the STO/LaO-LAO film, a transition from layer-by-layer growth to island growth was observed after growth of about 10 monolayers (ML). On the other hand, the STO/AlO sub 2 -LAO film could be grown in a layer-by-layer mode with a flat surface up to 40 ML. We suggest that defects induced by charge compensation influence the strain states and the physical properties of oxide heterostructures significantly.

  17. Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors

    Energy Technology Data Exchange (ETDEWEB)

    Provine, J, E-mail: jprovine@stanford.edu; Schindler, Peter; Torgersen, Jan; Kim, Hyo Jin [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Karnthaler, Hans-Peter [Physics of Nanostructured Materials, University of Vienna, 1090 Vienna (Austria); Prinz, Fritz B. [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 and Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2016-01-15

    Tetrakisdimethylamido (TDMA) based precursors are commonly used to deposit metal oxides such as TiO{sub 2}, ZrO{sub 2}, and HfO{sub 2} by means of chemical vapor deposition and atomic layer deposition (ALD). Both thermal and plasma enhanced ALD (PEALD) have been demonstrated with TDMA-metal precursors. While the reactions of TDMA-type precursors with water and oxygen plasma have been studied in the past, their reactivity with pure O{sub 2} has been overlooked. This paper reports on experimental evaluation of the reaction of molecular oxygen (O{sub 2}) and several metal organic precursors based on TDMA ligands. The effect of O{sub 2} exposure duration and substrate temperature on deposition and film morphology is evaluated and compared to thermal reactions with H{sub 2}O and PEALD with O{sub 2} plasma.

  18. Fabrication of high aspect ratio TiO{sub 2} and Al{sub 2}O{sub 3} nanogratings by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shkondin, Evgeniy, E-mail: eves@fotonik.dtu.dk [Department of Photonics Engineering, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark and Danish National Center for Micro- and Nanofabrication (DANCHIP), DK-2800 Kongens Lyngby (Denmark); Takayama, Osamu; Lavrinenko, Andrei V. [Department of Photonics Engineering, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Lindhard, Jonas Michael; Larsen, Pernille Voss; Mar, Mikkel Dysseholm; Jensen, Flemming [Danish National Center for Micro- and Nanofabrication (DANCHIP), DK-2800 Kongens Lyngby (Denmark)

    2016-05-15

    The authors report on the fabrication of TiO{sub 2} and Al{sub 2}O{sub 3} nanostructured gratings with an aspect ratio of up to 50. The gratings were made by a combination of atomic layer deposition (ALD) and dry etch techniques. The workflow included fabrication of a Si template using deep reactive ion etching followed by ALD of TiO{sub 2} or Al{sub 2}O{sub 3}. Then, the template was etched away using SF{sub 6} in an inductively coupled plasma tool, which resulted in the formation of isolated ALD coatings, thereby achieving high aspect ratio grating structures. SF{sub 6} plasma removes silicon selectively without any observable influence on TiO{sub 2} or Al{sub 2}O{sub 3}, thus revealing high selectivity throughout the fabrication. Scanning electron microscopy was used to analyze every fabrication step. Due to nonreleased stress in the ALD coatings, the top parts of the gratings were observed to bend inward as the Si template was removed, thus resulting in a gradual change in the pitch value of the structures. The pitch on top of the gratings is 400 nm, and it gradually reduces to 200 nm at the bottom. The form of the bending can be reshaped by Ar{sup +} ion beam etching. The chemical purity of the ALD grown materials was analyzed by x-ray photoelectron spectroscopy. The approach presented opens the possibility to fabricate high quality optical metamaterials and functional nanostructures.

  19. Oxygen-Induced Restructuring of Rutile TiO(2)(110): Formation Mechanism, Atomic Models, and Influence on Surface Chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Li, Min; Hebenstreit, Wilhelm; Diebold, Ulrike; Henderson, Michael A.; Jennison, Dwight R.

    1999-07-07

    The rutile TiO{sub 2} (110) (1x1) surface is considered the prototypical ''well-defined'' system in the surface science of metal oxides. Its popularity results partly from two experimental advantages: bulk-reduced single crystals do not exhibit charging, and stoichiometric surfaces--as judged by electron spectroscopes--can be prepared reproducibly by sputtering and annealing in oxygen. We present results that show that this commonly-applied preparation procedure may result in a surface structure that is by far more complex than generally anticipated. Flat, (1x1) terminated surfaces are obtained by sputtering and annealing in ultrahigh vacuum. When re-annealed in oxygen at moderate temperatures (470 K to 660 K), irregular networks of partially-connected, pseudohexagonal rosettes (6.5 x 6 {angstrom} wide), one-unit cell wide strands, and small ({approximately} tens of {angstrom}) (1x1) islands appear. This new surface phase is formed through reaction of oxygen gas with interstitial Ti from the reduced bulk. Because it consists of an incomplete, kinetically-limited (1x1) layer, this phenomenon has been termed restructuring. We report a combined experimental and theoretical study that systematically explores this restructuring process. The influence of several parameters (annealing time, temperature, pressure, sample history, gas) on the surface morphology is investigated using STM. The surface coverage of the added phase as well as the kinetics of the restructuring process are quantified by LEIS and SSIMS measurements in combination with annealing in {sup 18}O-enriched gas. Atomic models of the essential structural elements are presented and are shown to be stable with first-principles density functional calculations. The effect of oxygen-induced restructuring on surface chemistry and its importance for TiO{sub 2} and other bulk-reduced oxide materials is briefly discussed.

  20. Fabrication of high aspect ratio TiO2 and Al2O3 nanogratings by atomic layer deposition

    DEFF Research Database (Denmark)

    Shkondin, Evgeniy; Takayama, Osamu; Michael-Lindhard, Jonas

    2016-01-01

    followed by ALD of TiO2 or Al2O3. Then, the template was etched away using SF6 in an inductively coupled plasma tool, which resulted in the formation of isolated ALD coatings, thereby achieving high aspect ratio grating structures. SF6 plasma removes silicon selectively without any observable influence......The authors report on the fabrication of TiO2 and Al2O3 nanostructured gratings with an aspect ratio of up to 50. The gratings were made by a combination of atomic layer deposition (ALD) and dry etch techniques. The workflow included fabrication of a Si template using deep reactive ion etching...... in a gradual change in the pitch value of the structures. The pitch on top of the gratings is 400 nm, and it gradually reduces to 200 nm at the bottom. The form of the bending can be reshaped by Arþ ion beam etching. The chemical purity of the ALD grown materials was analyzed by x-ray photoelectron...

  1. TiO{sub 2} modified with Ag nanoparticles synthesized via ultrasonic atomization-UV reduction and the use of kinetic models to determine the acetic acid photocatalytic degradation

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Yingcao, E-mail: xuyingcao@aliyun.com [State Key Laboratory of Urban Water Resource, Environment, School of Municipal and Environmental Engineering, Harbin Institute of Technology, Harbin 150090 (China); Applied Chemistry Department, School of Science, Northeast Agriculture University, Harbin 150030 (China); You, Hong, E-mail: youhong@hit.edu.cn [State Key Laboratory of Urban Water Resource, Environment, School of Municipal and Environmental Engineering, Harbin Institute of Technology, Harbin 150090 (China)

    2014-12-01

    Highlights: • The first use of ultrasonic atomization-UV reduction for modifying Ag on TiO{sub 2}. • The first use of kinetics models for the establishment of the photocatalytic degradation of acetic acid using a hyperbolic mathematical model and introducing the concentration factor (α) in the dynamic model. • Photocatalytic experiment design using double-sided TiO{sub 2} and a double-light source. - Abstract: TiO{sub 2} surfaces modified with noble metal nanoparticles have been found to effectively reduce the photogenerated carrier recombination rate and significantly extend the light absorption properties of TiO{sub 2}, thereby greatly increasing its photocatalytic activity. In this paper, highly ordered, double-sided TiO{sub 2} nanotube arrays were prepared using an anodic oxidation method in a home-made reactor using glycerol/water (volume ratio 2:1) and NH{sub 4}F (0.25 mol/L) as the electrolyte, titanium plates (10 cm × 2 cm × 0.5 mm) as the anode and graphite as the cathode at a constant voltage of 25 V. After a 2-h reaction, anatase TiO{sub 2} nanotubes were obtained upon calcination at 450 °C for 4 h. The Ag nanoparticles on the surfaces of the TiO{sub 2} were prepared via ultrasonic atomization-ultraviolet light reduction. First, a silver nitrate solution was sputtered into small droplets under ultrasonication. Then, the Ag{sup +} droplets were reduced to Ag nanoparticles. The surface morphologies, structures and elemental compositions were characterized using SEM, EDS, XRD and XPS. The photocatalytic activities were determined in acetic acid solutions (40–200 mg/L), and a mathematical model for catalytic degradation was established based on a hyperbolic model. The SEM results showed that the diameters of the as-prepared Ag/TiO{sub 2} are approximately 100 nm and that the lengths are approximately 1.8 μm. The XRD crystal structure analysis shows that the anatase phase of the TiO{sub 2} does not change during the Ag modification, and there was

  2. Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source

    Science.gov (United States)

    Chaker, A.; Szkutnik, P. D.; Pointet, J.; Gonon, P.; Vallée, C.; Bsiesy, A.

    2016-08-01

    In this paper, TiO2 layers grown on RuO2 by atomic layer deposition (ALD) using tetrakis (dimethyla-mino) titanium (TDMAT) and either oxygen plasma or H2O as oxygen source were analyzed using X-ray diffraction (XRD), Raman spectroscopy, and depth-resolved X-ray Photoelectron spectroscopy (XPS). The main objective is to investigate the surface chemical reactions mechanisms and their influence on the TiO2 film properties. The experimental results using XRD show that ALD deposition using H2O leads to anatase TiO2 whereas a rutile TiO2 is obtained when oxygen-plasma is used as oxygen source. Depth-resolved XPS analysis allows to determine the reaction mechanisms at the RuO2 substrate surface after growth of thin TiO2 layers. Indeed, the XPS analysis shows that when H2O assisted ALD process is used, intermediate Ti2O3 layer is obtained and RuO2 is reduced into Ru as evidenced by high resolution transmission electron microscopy. In this case, there is no possibility to re-oxidize the Ru surface into RuO2 due to the weak oxidation character of H2O and an anatase TiO2 layer is therefore grown on Ti2O3. In contrast, when oxygen plasma is used in the ALD process, its strong oxidation character leads to the re-oxidation of the partially reduced RuO2 following the first Ti deposition step. Consequently, the RuO2 surface is regenerated, allowing the growth of rutile TiO2. A surface chemical reaction scheme is proposed that well accounts for the observed experimental results.

  3. Interplay between the spin-selection rule and frontier orbital theory in O2 activation and CO oxidation by single-atom-sized catalysts on TiO2(110).

    Science.gov (United States)

    Li, Shunfang; Zhao, Xingju; Shi, Jinlei; Jia, Yu; Guo, Zhengxiao; Cho, Jun-Hyung; Gao, Yanfei; Zhang, Zhenyu

    2016-09-28

    Exploration of the catalytic activity of low-dimensional transition metal (TM) or noble metal catalysts is a vital subject of modern materials science because of their instrumental role in numerous industrial applications. Recent experimental advances have demonstrated the utilization of single atoms on different substrates as effective catalysts, which exhibit amazing catalytic properties such as more efficient catalytic performance and higher selectivity in chemical reactions as compared to their nanostructured counterparts; however, the underlying microscopic mechanisms operative in these single atom catalysts still remain elusive. Based on first-principles calculations, herein, we present a comparative study of the key kinetic rate processes involved in CO oxidation using a monomer or dimer of two representative TMs (Pd and Ni) on defective TiO2(110) substrates (TMn@TiO2(110), n = 1, 2) to elucidate the underlying mechanism of single-atom catalysis. We reveal that the O2 activation rates of the single atom TM catalysts deposited on TiO2(110) are governed cooperatively by the classic spin-selection rule and the well-known frontier orbital theory (or generalized d-band picture) that emphasizes the energy gap between the frontier orbitals of the TM catalysts and O2 molecule. We further illuminate that the subsequent CO oxidation reactions proceed via the Langmuir-Hinshelwood mechanism with contrasting reaction barriers for the Pd monomer and dimer catalysts. These findings not only provide an explanation for existing observations of distinctly different catalytic activities of Pd@TiO2(110) and Pd2@TiO2(110) [Kaden et al., Science, 2009, 326, 826-829] but also shed new insights into future utilization and optimization of single-atom catalysis.

  4. Potential and piezoelectric response imaging of 180^o domain of atomically ordered clean surfaces of BaTiO3 single crystals in UHV

    Science.gov (United States)

    Watanabe, Yukio; Kaku, S.; Matsumoto, D.; Cheong, S. W.

    2009-03-01

    We report the electrostatic and piezoelectric properties of the clean, free surface of BaTiO3 single crystal in ultra high vacuum (UHV) The topographic imaging by AFM confirmed that the surface is atomically wellordered exhibiting clear one-lattice-height atomic steps. The amplitude and the phase image of piezoelectric response microscopy (PFM) identified 180^o domains. The electrostatic potential mapping by Kelvin force microscopy (KFM) of these domains revealed that the shapes of the domains agreed exactly with the PFM images, which confirms the correctness of the standard 180^o domain theory and disagrees with closure domains. However, the potential difference of upward and downward domain is approx. 0.1V, which is 100 times smaller than the value estimated by the standard theory. Similar measurements with changing temperature across Curie temperature show that this result cannot be explained by the compensation of the spontaneous polarization by contamination or oxygen deficiency or ionic conduction). The present results suggest that an intrinsic electrostatic shielding mechanism exists for 180^o domains, which is consistent with the reports of surface electron/hole layers [1]. [4pt] [1] Watanabe et al. PRL86332(2001);Ferroelectr.367, 23(2008) We acknowledge JSPS No.19340084.

  5. Local atomic and electronic structure of LaCoO3 /SrTiO3 thin films by HAADF STEM and EELS

    Science.gov (United States)

    Borisevich, Albina; Hyuck Jang, Jae; Kim, Young-Min; Qiao, Liang; Biegalski, Michael

    2013-03-01

    For perovskite films with several competing functionalities, magnetic and electronic properties can be affected both by structural order parameters and chemical factors. For example, in LaCoO3 (LCO) thin films, magnetic and transport properties are strongly dependent on strain state and oxygen content. For this study, LCO thin films were deposited by pulsed laser deposition method with different thicknesses (2, 5, 15 unit cell and 20 nm thickness) on SrTiO3 substrate. X-ray photoelectron spectroscopy studies of the grown films have demonstrated that Co 3p edges shift up to 2 eV for 15 u.c. and 20 nm films, indicating possible presence of 2D electron gas. The structure of the 5 u.c and 15 u.c LCO films was examined. Atomic position mapping from STEM HAADF and BF images can reveal lattice parameter and octahedral tilt behavior with atomic resolution. BF STEM imaging showed that octahedral tilts were active in the 15 u.c. film but not in the 5 u.c. film. A complex pattern of O K fine structure evolution at the interface was observed; results of the deconvolution of different contributions to this behavior using advanced simulations, as well as data on oxygen vacancy mapping, will be presented. Research supported by the US DOE-BES, Materials Sciences and Engineering Division, and through a user project supported by ORNL's ShaRE User Program.

  6. Ti atoms in Ru0.3Ti0.7O2 mixed oxides form active and selective sites for electrochemical chlorine evolution

    DEFF Research Database (Denmark)

    Karlsson, Rasmus K. B.; Hansen, Heine Anton; Bligaard, Thomas

    2014-01-01

    The electrocatalytic properties of the (1 1 0) surface of Ru-doped TiO2, Ti-doped RuO2 and the industrially important Dimensionally Stable Anode (DSA) composition Ru0.3Ti0.7O2 have been examined using density functional theory. It is found that the oxygen adsorption energy on a Ti site is strongl...

  7. Osteoconductive Potential of Barrier NanoSiO2 PLGA Membranes Functionalized by Plasma Enhanced Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Antonia Terriza

    2014-01-01

    Full Text Available The possibility of tailoring membrane surfaces with osteoconductive potential, in particular in biodegradable devices, to create modified biomaterials that stimulate osteoblast response should make them more suitable for clinical use, hopefully enhancing bone regeneration. Bioactive inorganic materials, such as silica, have been suggested to improve the bioactivity of synthetic biopolymers. An in vitro study on HOB human osteoblasts was performed to assess biocompatibility and bioactivity of SiO2 functionalized poly(lactide-co-glycolide (PLGA membranes, prior to clinical use. A 15 nm SiO2 layer was deposited by plasma enhanced chemical vapour deposition (PECVD, onto a resorbable PLGA membrane. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, and infrared spectroscopy (FT-IR. HOB cells were seeded on sterilized test surfaces where cell morphology, spreading, actin cytoskeletal organization, and focal adhesion expression were assessed. As proved by the FT-IR analysis of samples, the deposition by PECVD of the SiO2 onto the PLGA membrane did not alter the composition and other characteristics of the organic membrane. A temporal and spatial reorganization of cytoskeleton and focal adhesions and morphological changes in response to SiO2 nanolayer were identified in our model. The novedous SiO2 deposition method is compatible with the standard sterilization protocols and reveals as a valuable tool to increase bioactivity of resorbable PLGA membranes.

  8. A new perspective on structural and morphological properties of carbon nanotubes synthesized by Plasma Enhanced Chemical Vapor Deposition technique

    Science.gov (United States)

    Salar Elahi, A.; Agah, K. Mikaili; Ghoranneviss, M.

    CNTs were produced on a silicon wafer by Plasma Enhanced Chemical Vapor Deposition (PECVD) using acetylene as a carbon source, cobalt as a catalyst and ammonia as a reactive gas. The DC-sputtering system was used to prepare cobalt thin films on Si substrates. A series of experiments was carried out to investigate the effects of reaction temperature and deposition time on the synthesis of the nanotubes. The deposition time was selected as 15 and 25 min for all growth temperatures. Energy Dispersive X-ray (EDX) measurements were used to investigate the elemental composition of the Co nanocatalyst deposited on Si substrates. Atomic Force Microscopy (AFM) was used to characterize the surface topography of the Co nanocatalyst deposited on Si substrates. The as-grown CNTs were characterized under Field Emission Scanning Electron Microscopy (FESEM) to study the morphological properties of CNTs. Also, the grown CNTs have been investigated by High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. The results demonstrated that increasing the temperature leads to increasing the diameter of CNTs.

  9. Osteoconductive Potential of Barrier NanoSiO2 PLGA Membranes Functionalized by Plasma Enhanced Chemical Vapour Deposition

    Science.gov (United States)

    Terriza, Antonia; Vilches-Pérez, Jose I.; de la Orden, Emilio; Yubero, Francisco; Gonzalez-Caballero, Juan L.; González-Elipe, Agustin R.; Vilches, José; Salido, Mercedes

    2014-01-01

    The possibility of tailoring membrane surfaces with osteoconductive potential, in particular in biodegradable devices, to create modified biomaterials that stimulate osteoblast response should make them more suitable for clinical use, hopefully enhancing bone regeneration. Bioactive inorganic materials, such as silica, have been suggested to improve the bioactivity of synthetic biopolymers. An in vitro study on HOB human osteoblasts was performed to assess biocompatibility and bioactivity of SiO2 functionalized poly(lactide-co-glycolide) (PLGA) membranes, prior to clinical use. A 15 nm SiO2 layer was deposited by plasma enhanced chemical vapour deposition (PECVD), onto a resorbable PLGA membrane. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, and infrared spectroscopy (FT-IR). HOB cells were seeded on sterilized test surfaces where cell morphology, spreading, actin cytoskeletal organization, and focal adhesion expression were assessed. As proved by the FT-IR analysis of samples, the deposition by PECVD of the SiO2 onto the PLGA membrane did not alter the composition and other characteristics of the organic membrane. A temporal and spatial reorganization of cytoskeleton and focal adhesions and morphological changes in response to SiO2 nanolayer were identified in our model. The novedous SiO2 deposition method is compatible with the standard sterilization protocols and reveals as a valuable tool to increase bioactivity of resorbable PLGA membranes. PMID:24883304

  10. Evaluation of chemical and structural properties of germanium-carbon coatings deposited by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, Hossein, E-mail: h.jamali@mut-es.ac.ir; Mozafarinia, Reza; Eshaghi, Akbar

    2015-10-15

    Germanium-carbon coatings were deposited on silicon and glass substrates by plasma enhanced chemical vapor deposition (PECVD) using three different flow ratios of GeH{sub 4} and CH{sub 4} precursors. Elemental analysis, structural evaluation and microscopic investigation of coatings were performed using laser-induced breakdown spectroscopy (LIBS), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. Based on the results, the coatings exhibited a homogeneous and dense structure free of pores with a very good adhesion to substrate. The structural evaluation revealed that the germanium-carbon coatings were a kind of a Ge-rich composite material containing the amorphous and crystalline germanium and amorphous carbon with the mixture of Ge–Ge, Ge–C, C–C, Ge–H and C–H bonds. The result suggested that the amorphisation of the coatings could be increased with raising CH{sub 4}:GeH{sub 4} flow rate ratio and subsequently increasing C amount incorporated into the coating. - Highlights: • Germanium-carbon coatings were prepared by PECVD technique. • The germanium-carbon coatings were a kind of composite material. • The amorphisation of the coatings were increased with raising CH{sub 4}:GeH{sub 4} flow ratio.

  11. Selective adhesion of intestinal epithelial cells on patterned films with amine functionalities formed by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyung Seop; Choi, Changrok; Kim, Soo Heon; Choi, Kun oh [Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Jeong Min [Department of Molecular Biology and Institute of Nanosensor and Biotechnology, BK21 Graduate Program for RNA Biology, Dankook University, Yongin 448-701 (Korea, Republic of); Kim, Hong Ja [Department of Internal Medicine, Dankook University College of Medicine, Cheonan 330-715 (Korea, Republic of); Yeo, Sanghak [R and D Center, ELBIO Incorporation, 426-5 Gasan-dong Geumchun-gu, Seoul (Korea, Republic of); Park, Heonyong [Department of Molecular Biology and Institute of Nanosensor and Biotechnology, BK21 Graduate Program for RNA Biology, Dankook University, Yongin 448-701 (Korea, Republic of); Jung, Donggeun, E-mail: djung@skku.ac.kr [Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2010-11-01

    Control of cell adhesion to surfaces is important to develop analytical tools in the areas of biomedical engineering. To control cell adhesiveness of the surface, we constructed a variety of plasma polymerized hexamethyldisiloxane (PPHMDSO) thin films deposited at the plasma power range of 10-100 W by plasma enhanced chemical vapor deposition (PECVD). The PPHMDSO film that was formed at 10 W was revealed to be resistant to cell adhesion. The resistance to cell adhesion is closely related to physicochemical properties of the film. Atomic force microscopic data show an increase in surface roughness from 0.52 nm to 0.74 nm with increasing plasma power. From Fourier transform infrared (FT-IR) absorption spectroscopy data, it was also determined that the methyl (-CH{sub 3}) peak intensity increases with increasing plasma power, whereas the hydroxyl (-OH) peak decreases. X-ray photoelectron spectroscopy data reveal an increase in C-O bonding with increasing plasma power. These results suggest that C-O bonding and hydroxyl (-OH) and methyl (-CH{sub 3}) functional groups play a critical part in cell adhesion. Furthermore, to enhance a diversity of film surface, we accumulated the patterned plasma polymerized ethylenediamine (PPEDA) thin film on the top of the PPHMDSO thin film. The PPEDA film is established to be strongly cell-adherent. This patterned two-layer film stacking method can be used to form the selectively limited cell-adhesive PPEDA spots over the adhesion-resistant surface.

  12. Stoichiometry variation for the atomic layer deposition of Sr{sub x}Ti{sub y}O{sub z} from Sr({sup i}Pr{sub 3}Cp){sub 2}, Ti[N(CH{sub 3}){sub 2}]{sub 4} and H{sub 2}O

    Energy Technology Data Exchange (ETDEWEB)

    Rentrop, S., E-mail: solveig.rentrop@physik.tu-freiberg.de [Institute for Experimental Physics, TU Bergakademie Freiberg, Leipziger Straße 23, 09599 Freiberg (Germany); Abendroth, B.; Walter, J. [Institute for Experimental Physics, TU Bergakademie Freiberg, Leipziger Straße 23, 09599 Freiberg (Germany); Rensberg, J. [Institute for Solid State Physics, Friedrich-Schiller-Universität Jena, Helmholzweg 3, 07743 Jena (Germany); Münchgesang, W.; Strohmeyer, R.; Stöcker, H. [Institute for Experimental Physics, TU Bergakademie Freiberg, Leipziger Straße 23, 09599 Freiberg (Germany); Ronning, C. [Institute for Solid State Physics, Friedrich-Schiller-Universität Jena, Helmholzweg 3, 07743 Jena (Germany); Gemming, S. [Helmholz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01314 Dresden (Germany); Meyer, D.C. [Institute for Experimental Physics, TU Bergakademie Freiberg, Leipziger Straße 23, 09599 Freiberg (Germany)

    2015-02-27

    The atomic layer deposition (ALD) of stoichiometric SrTiO{sub 3} as well as layers with either Sr or Ti excess from the commercial precursors Bis(tri-isopropylcyclopentadienyl)-strontium Sr({sup i}Pr{sub 3}Cp){sub 2}, Tetrakis-(dimethylamido)titanium(IV) Ti[N(CH{sub 3}){sub 2}]{sub 4} and H{sub 2}O on a commercial ALD system is demonstrated. The influence of the stoichiometry on the optical layer properties was investigated. Spectroscopic ellipsometry shows that all Sr{sub x}Ti{sub y}O{sub z} layers are transparent up to the optical gap energy, which amounts to 3.87 eV for stoichiometric SrTiO{sub 3}. A direct correlation between the Sr content, optical properties, layer density and the growth per cycle value was determined. X-ray photoelectron spectroscopy after Ar ion cluster sputtering indicates that the layers are free of carbon. After ex situ annealing under atmospheric conditions we observed a change in microstructure from amorphous to polycrystalline starting at 545 °C by atomic force microscopy and grazing incidence X-ray diffraction. Electrical I–V measurements show very small leakage currents confirming the insulating character of the Sr{sub x}Ti{sub y}O{sub z} layers. - Highlights: • Sr{sub x}Ti{sub y}O{sub z} layers were grown from commercial precursors at a commercial ALD device. • Stoichiometric as well as layers with Sr or Ti excess can be deposited. • At a deposition temperature of 320 °C the layers are free of carbon. • A direct correlation between Sr content, optical properties and GPC was determined. • Ex situ annealing at 600 °C yields completely crystallized SrTiO{sub 3} layers.

  13. Plasma-Enhanced Chemical Vapor Deposition as a Method for the Deposition of Peptide Nanotubes

    Science.gov (United States)

    2013-09-17

    peptide nanotubes, plasma-enhanced chemical vapor deposition, nano assembly 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18...Using physical vapor deposition ( PVD ) well-ordered assemblies of peptide nanotubes (PNTs) composed of dipeptide subunits are obtained on various...for the deposition of thin films (Figure 1b). A. B. Figure 1. (a) Illustration of physical vapor deposition ( PVD ) process of diphenylalanine

  14. Simulation of low-temperature, atmospheric-pressure plasma enhanced chemical vapor deposition reactors

    OpenAIRE

    Lorant, Christophe; Descamps, Pierre; De Wilde, Juray; 1st BeLux workshop on “Coating, Materials, surfaces and Interfaces

    2014-01-01

    The simulation of low-temperature, atmospheric-pressure plasma enhanced chemical vapor deposition reactors is challenging due to the coupling of the fluid dynamics, the chemical reactions and the electric field and the stiffness of the resulting mathematical system. The model equations and the rigorous model reduction to reduce the stiffness are addressed in this paper. Considering pure nitrogen plasma, simulations with two configurations are discussed.

  15. Synthesis of carbon nanotubes by plasma-enhanced CVD process: gas phase study of synthesis conditions

    OpenAIRE

    Guláš, Michal; Cojocaru, Costel Sorin; Fleaca, Claudiu; Farhat, Samir; Veis, Pavel; Le Normand, Francois

    2008-01-01

    International audience; To support experimental investigations, a model based on ChemkinTM software was used to simulate gas phase and surface chemistry during plasma-enhanced catalytic CVD of carbon nanotubes. According to these calculations, gas phase composition, etching process and growth rates are calculated. The role of several carbon species, hydrocarbon molecules and ions in the growth mechanism of carbon nanotubes is presented in this study. Study of different conditions of gas phase ...

  16. Synthesis of carbon nanbotubes by plasma-enhanced CVD process: gas phase study of synthesis conditions

    Science.gov (United States)

    Guláš, M.; Cojocaru, C. S.; Fleaca, C. T.; Farhat, S.; Veis, P.; Le Normand, F.

    2008-09-01

    To support experimental investigations, a model based on Chemkin^TM software was used to simulate gas phase and surface chemistry during plasma-enhanced catalytic CVD of carbon nanotubes. According to these calculations, gas phase composition, etching process and growth rates are calculated. The role of several carbon species, hydrocarbon molecules and ions in the growth mechanism of carbon nanotubes is presented in this study. Study of different conditions of gas phase activation sources and pressure is performed.

  17. Oxygen Barrier Coating Deposited by Novel Plasma-enhanced Chemical Vapor Deposition

    DEFF Research Database (Denmark)

    Jiang, Juan; Benter, M.; Taboryski, Rafael Jozef

    2010-01-01

    We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source. This confi......, and it increased the barrier property of the modified low-density polyethylene, polyethylene terephthalate, and polylactide by 96.48%, 99.69%, and 99.25%, respectively....

  18. Investigation of the Contact Resistance between Ti/TiN and Ru in Metal-1/Plate Contacts of Ruthenium Insulator Silicon Capacitor

    Science.gov (United States)

    Yun, Ju Young; Kim, Byung Hee; Seo, Jung Hun; Lee, Jong Myeong; Kang, Sang Bom; Choi, Gil Heyun; Chung, U In; Moon, Joo Tae

    2003-04-01

    The contact resistance between Ti/TiN and a Ru electrode in metal-1/plate contacts of ruthenium insulator silicon (RIS) capacitor is investigated. When physical vapor deposition (PVD) Ti/TiN was used as a barrier metal for the metal contact process, a high contact resistance of more than 5000 Ω/contact was obtained due to the oxidation of Ti by the residual oxygen in Ru electrode. On the other hand, with a plasma enhanced chemical vapor deposition (PECVD) Ti/CVD TiN barrier metal, oxidation of Ti was not observed and subsequently a low contact resistance of 15 Ω/contact was obtained. The absence of Ti oxidation with PECVD Ti/CVD TiN can be explained by the reduction of oxygen in the Ru electrode due to the H2 plasma environment in the PECVD-Ti process.

  19. A density functional theory study of atomic steps on stoichiometric rutile TiO2(110).

    Science.gov (United States)

    Stausholm-Møller, Jess; Kristoffersen, Henrik Høgh; Martinez, Umberto; Hammer, Bjørk

    2013-12-21

    We present a detailed theoretical study of the energetics of stoichiometric steps on the (110) surface of rutile TiO2. Step structures running along the , , and directions including bulk-terminations and possible reconstructions have been considered. A robust method for extracting surface and step energies of vicinal surfaces, where the surface energies converge slowly with respect to slab thickness, is outlined and used. Based on the calculated step energies a 2D Wulff-construction is presented from which it can be concluded that in equilibrium only oxygen terminated steps running along the directions and reconstructed steps along the directions should be present. Finally it is found that under conditions of stoichiometry the reconstructed steps should be more than twice as abundant as oxygen terminated steps.

  20. Use of Plasma Enhanced ALD to Construct Efficient Interference Filters for Astronomy in the FUV - Year 2 Update

    Science.gov (United States)

    Scowen, Paul A.; Nemanich, Robert; Eller, Brianna; Yu, Hongbin; Mooney, Tom; Beasley, Matt

    2017-01-01

    Over the past few years the advent of atomic layer deposition (ALD) technology has opened new capabilities to the field of coatings deposition for use in optical elements. At the same time, there have been major advances in both optical designs and detector technologies that can provide orders of magnitude improvement in throughput in the far ultraviolet (FUV) and near ultraviolet (NUV) passbands. Recent review work has shown that a veritable revolution is about to happen in astronomical diagnostic work for targets ranging from protostellar and protoplanetary systems, to the intergalactic medium that feeds gas supplies for galactic star formation, and supernovae and hot gas from star forming regions that determine galaxy formation feedback. These diagnostics are rooted in access to a forest of emission and absorption lines in the ultraviolet (UV), and all that prevents this advance is the lack of throughput in such systems, even in space-based conditions. We are pursuing an approach to use a range of materials to implement stable optical layers suitable for protective overcoats with high UV reflectivity and unprecedented uniformity, and to use that capability to leverage innovative ultraviolet/optical filter construction to enable astronomical science. These materials will be deposited in a multilayer format over a metal base to produce a stable construct. Specifically, we are employing PEALD (plasma-enhanced atomic layer deposition) methods for the deposition and construction of reflective layers that can be used to construct unprecedented filter designs for use in the ultraviolet. Our paper reports on our work as we enter year 2 of our 3-year program.

  1. Cathode encapsulation of OLEDs by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks

    NARCIS (Netherlands)

    Keuning, W.; Van de Weijer, P.; Lifka, H.; Kessels, W.M.M.; Creatore, M.

    2011-01-01

    Al2O3 thin films synthesized by plasma-enhanced atomic layer deposition(ALD) at room temperature (25 ºC) have been tested as water vapor per-meation barriers for OLED devices. Silicon nitride films (a-SiNx:H)deposited by plasma-enhanced chemical vapor deposition (PE-CVD) servedas reference and were

  2. A density functional theory study of atomic steps on stoichiometric rutile TiO{sub 2}(110)

    Energy Technology Data Exchange (ETDEWEB)

    Stausholm-Møller, Jess; Kristoffersen, Henrik Høgh; Martinez, Umberto; Hammer, Bjørk [Interdisciplinary Nanoscience Center (iNANO) and Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark)

    2013-12-21

    We present a detailed theoretical study of the energetics of stoichiometric steps on the (110) surface of rutile TiO{sub 2}. Step structures running along the 〈001〉, 〈11{sup ¯}1〉, and 〈11{sup ¯}0〉 directions including bulk-terminations and possible reconstructions have been considered. A robust method for extracting surface and step energies of vicinal surfaces, where the surface energies converge slowly with respect to slab thickness, is outlined and used. Based on the calculated step energies a 2D Wulff-construction is presented from which it can be concluded that in equilibrium only oxygen terminated steps running along the 〈001〉 directions and reconstructed steps along the 〈11{sup ¯}1〉 directions should be present. Finally it is found that under conditions of stoichiometry the reconstructed 〈11{sup ¯}1〉 steps should be more than twice as abundant as oxygen terminated 〈001〉 steps.

  3. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.

    Science.gov (United States)

    Khan, Z N; Ahmed, S; Ali, M

    2016-01-01

    Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer), time-temperature cycle and sequence are key parameters influencing the device's output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application.

  4. Biofunctionalization of carbon nanotubes/chitosan hybrids on Ti implants by atom layer deposited ZnO nanostructures

    Science.gov (United States)

    Zhu, Yizhou; Liu, Xiangmei; Yeung, Kelvin W. K.; Chu, Paul K.; Wu, Shuilin

    2017-04-01

    One-dimensional (1D) nanostructures of ZnO using atomic layer deposition (ALD) on chitosan (CS) modified carbon nanotubes (CNTs) were first introduced onto the surfaces of biomedical implants. When the content of ZnO is not sufficient, CNTs can strengthen the antibacterial activity against E. coli and S. aureus by 8% and 39%, respectively. CS can improve the cytocompatibility of CNTs and ZnO. The amount of Zn content can be controlled by changing the cycling numbers of ALD processes. This hybrid coating can not only endow medical implants with high self-antibacterial efficacy against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) of over 73% and 98%, respectively, but also regulate the proliferation and osteogenic differentiation of osteoblasts by controlling the amount of ZnO.

  5. High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Burke, Micheal, E-mail: micheal.burke@tyndall.ie; Blake, Alan; Djara, Vladimir; O' Connell, Dan; Povey, Ian M.; Cherkaoui, Karim; Monaghan, Scott; Scully, Jim; Murphy, Richard; Hurley, Paul K.; Pemble, Martyn E.; Quinn, Aidan J., E-mail: aidan.quinn@tyndall.ie [Tyndall National Institute, University College Cork, Cork (Ireland)

    2015-01-01

    The authors report on the structural and electrical properties of TiN/Al{sub 2}O{sub 3}/TiN metal–insulator–metal (MIM) capacitor structures in submicron three-dimensional (3D) trench geometries with an aspect ratio of ∼30. A simplified process route was employed where the three layers for the MIM stack were deposited using atomic layer deposition (ALD) in a single run at a process temperature of 250 °C. The TiN top and bottom electrodes were deposited via plasma-enhanced ALD using a tetrakis(dimethylamino)titanium precursor. 3D trench devices yielded capacitance densities of 36 fF/μm{sup 2} and quality factors >65 at low frequency (200 Hz), with low leakage current densities (<3 nA/cm{sup 2} at 1 V). These devices also show strong optical iridescence which, when combined with the covert embedded capacitance, show potential for system in package (SiP) anticounterfeiting applications.

  6. Atomic layer deposition of high-quality Al{sub 2}O{sub 3} and Al-doped TiO{sub 2} thin films from hydrogen-free precursors

    Energy Technology Data Exchange (ETDEWEB)

    Aarik, Lauri, E-mail: lauri.aarik@ut.ee [University of Tartu, Institute of Physics, Riia 142, 51014 Tartu (Estonia); Arroval, Tõnis; Rammula, Raul; Mändar, Hugo [University of Tartu, Institute of Physics, Riia 142, 51014 Tartu (Estonia); Sammelselg, Väino [University of Tartu, Institute of Physics, Riia 142, 51014 Tartu (Estonia); University of Tartu, Institute of Chemistry, Ravila 14A, 50411 Tartu (Estonia); Hudec, Boris; Hušeková, Kristína; Fröhlich, Karol [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Aarik, Jaan [University of Tartu, Institute of Physics, Riia 142, 51014 Tartu (Estonia)

    2014-08-28

    Possibilities for atomic layer deposition of Al{sub 2}O{sub 3} films from chloride and ozone were studied in order to avoid application of precursors that could leave hydrogen impurities in the films. Growth of Al{sub 2}O{sub 3} was obtained at substrate temperatures of 300–450 °C. At these temperatures, the growth rate was close to the values reported for corresponding H{sub 2}O-based processes. Studies of thin-film composition revealed that reactivity of O{sub 3} was sufficient to ensure deposition of films with chlorine concentration below 0.05 at.% at 350–450 °C. Application of the AlCl{sub 3}–O{sub 3} atomic layer deposition process for in situ Al-doping of TiO{sub 2} thin films demonstrated that the amount of Al incorporated into the films during a single deposition cycle depended on the doping level. A reason for this effect was the influence of Al-doping on the phase composition of the film material. Al-doping of the TiO{sub 2} films significantly reduced the surface roughness allowing deposition of high-density films with very flat surfaces. In capacitor structures with capacitance equivalent oxide thicknesses below 0.4 nm, the Al-doped TiO{sub 2} films deposited from TiCl{sub 4}, AlCl{sub 3} and O{sub 3} demonstrated markedly lower leakage current densities than the films with similar capacitance densities grown from TiCl{sub 4}, Al(CH{sub 3}){sub 3} and H{sub 2}O and from TiCl{sub 4}, Al(CH{sub 3}){sub 3} and O{sub 3} did. - Highlights: • Atomic layer deposition of thin films from AlCl{sub 3} and O{sub 3} was investigated. • Growth of Al{sub 2}O{sub 3} was obtained at temperatures 300–450 °C. • Growth rates up to 0.069 nm per cycle were observed. • Deposition of Al-doped TiO{sub 2} films from TiCl{sub 4}, AlCl{sub 3} and O{sub 3} was studied. • Films with superior dielectric properties were grown in the hydrogen-free process.

  7. Slurry analysis of cadmium and copper collected on 11-mercaptoundecanoic acid modified TiO2 core-Au shell nanoparticles by flame atomic absorption spectrometry.

    Science.gov (United States)

    Gunduz, S; Akman, S; Kahraman, M

    2011-02-15

    Separation/preconcentration of copper and cadmium using TiO(2) core-Au shell nanoparticles modified with 11-mercaptoundecanoic acid and their slurry analysis by flame atomic absorption spectrometry were described. For this purpose, at first, titanium dioxide nanoparticles were coated with gold shell by reducing the chloroauric acid with sodium borohydride and then modified with 11-mercaptoundecanoic acid. The characterization of modified nanoparticles was performed using ultra-violet spectroscopy and dynamic light scattering. Copper and cadmium were then collected on the prepared sorbent by batch method. The solid phase loaded with the analytes was separated by centrifugation and the supernatant was removed. Finally, the precipitate was slurried and directly aspirated into the flame for the determination of analytes. Thus, elution step and its all drawbacks were eliminated. The effects of pH, amount of sorbent, slurry volume, sample volume and diverse ions on the recovery were investigated. After optimization of experimental parameters, the analytes in different certified reference materials and spiked water samples were quantitatively recovered with 5% RSD. The analytes were enriched up to 20-fold. Limits of detection (N=10, 3σ) for copper and cadmium were 0.28 and 0.15 ng mL(-1), respectively. Copyright © 2010 Elsevier B.V. All rights reserved.

  8. Amorphous silicon carbon films prepared by hybrid plasma enhanced chemical vapor/sputtering deposition system: Effects of r.f. power

    Energy Technology Data Exchange (ETDEWEB)

    Rashid, Nur Maisarah Abdul, E-mail: nurmaisarahrashid@gmail.com [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ritikos, Richard; Othman, Maisara; Khanis, Noor Hamizah; Gani, Siti Meriam Ab. [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Muhamad, Muhamad Rasat [Chancellery Office, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Rahman, Saadah Abdul, E-mail: saadah@um.edu.my [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Chancellery Office, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)

    2013-02-01

    Silicon carbon films were deposited using a hybrid radio frequency (r.f.) plasma enhanced chemical vapor deposition (PECVD)/sputtering deposition system at different r.f. powers. This deposition system combines the advantages of r.f. PECVD and sputtering techniques for the deposition of silicon carbon films with the added advantage of eliminating the use of highly toxic silane gas in the deposition process. Silicon (Si) atoms were sputtered from a pure amorphous silicon (a-Si) target by argon (Ar) ions and carbon (C) atoms were incorporated into the film from C based growth radicals generated through the discharge of methane (CH{sub 4}) gas. The effects of r.f. powers of 60, 80, 100, 120 and 150 W applied during the deposition process on the structural and optical properties of the films were investigated. Raman spectroscopic studies showed that the silicon carbon films contain amorphous silicon carbide (SiC) and amorphous carbon (a-C) phases. The r.f. power showed significant influence on the C incorporation in the film structure. The a-C phases became more ordered in films with high C incorporation in the film structure. These films also produced high photoluminescence emission intensity at around 600 nm wavelength as a result of quantum confinement effects from the presence of sp{sup 2} C clusters embedded in the a-SiC and a-C phases in the films. - Highlights: ► Effects of radio frequency (r.f.) power on silicon carbon (SiC) films were studied. ► Hybrid plasma enhanced chemical vapor deposition/sputtering technique was used. ► r.f. power influences C incorporation in the film structure. ► High C incorporation results in higher ordering of the amorphous C phase. ► These films produced high photoluminescence emission intensity.

  9. Studies on non-oxide coating on carbon fibers using plasma enhanced chemical vapor deposition technique

    Science.gov (United States)

    Patel, R. H.; Sharma, S.; Prajapati, K. K.; Vyas, M. M.; Batra, N. M.

    2016-05-01

    A new way of improving the oxidative behavior of carbon fibers coated with SiC through Plasma Enhanced Chemical Vapor Deposition technique. The complete study includes coating of SiC on glass slab and Stainless steel specimen as a starting test subjects but the major focus was to increase the oxidation temperature of carbon fibers by PECVD technique. This method uses relatively lower substrate temperature and guarantees better stoichiometry than other coating methods and hence the substrate shows higher resistance towards mechanical and thermal stresses along with increase in oxidation temperature.

  10. Synthesis of carbon nanotube array using corona discharge plasma-enhanced chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    A corona discharge plasma-enhanced chemical vapor deposition with the features of atmospheric pressure and low temperature has been developed to synthesize the carbon nanotube array. The array was synthesized from methane and hydrogen mixture in anodic aluminum oxide template channels in that cobalt was electrodeposited at the bottom. The characterization results by the scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy and Raman spectroscopy indicate that the array consists of carbon nanotubes with the diameter of about 40 nm and the length of more than 4 -m, and the carbon nanotubes are mainly restrained within the channels of templates.

  11. Chemical Structure of Carbon Nitride Films Prepared by MW-ECR Plasma Enhanced Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    XUJun,GAOPeng; DINGWan-yu; LIXin; DENGXin-lu; DONGChuang

    2004-01-01

    Amorphous carbon nitride thin films were prepared by plasma-enhanced DC magnetron sputtering using twinned microwave electron cyclotron resonance plasma sources. Chemical structure of deposited films was investigated using X-ray photoelectron spectroscopy and Fourier transtorm infrared spectroscopy. The results indicate that the deposition rate is strongly affected by direct current bias, and the films are mainly composed of a single amorphous carbon nitride phase with N/C ratio close to C3N4, and the bonding is predominantly of C-N type.

  12. Atomic Layer Deposition of TiO2 for a High-Efficiency Hole-Blocking Layer in Hole-Conductor-Free Perovskite Solar Cells Processed in Ambient Air.

    Science.gov (United States)

    Hu, Hang; Dong, Binghai; Hu, Huating; Chen, Fengxiang; Kong, Mengqin; Zhang, Qiuping; Luo, Tianyue; Zhao, Li; Guo, Zhiguang; Li, Jing; Xu, Zuxun; Wang, Shimin; Eder, Dominik; Wan, Li

    2016-07-20

    In this study we design and construct high-efficiency, low-cost, highly stable, hole-conductor-free, solid-state perovskite solar cells, with TiO2 as the electron transport layer (ETL) and carbon as the hole collection layer, in ambient air. First, uniform, pinhole-free TiO2 films of various thicknesses were deposited on fluorine-doped tin oxide (FTO) electrodes by atomic layer deposition (ALD) technology. Based on these TiO2 films, a series of hole-conductor-free perovskite solar cells (PSCs) with carbon as the counter electrode were fabricated in ambient air, and the effect of thickness of TiO2 compact film on the device performance was investigated in detail. It was found that the performance of PSCs depends on the thickness of the compact layer due to the difference in surface roughness, transmittance, charge transport resistance, electron-hole recombination rate, and the charge lifetime. The best-performance devices based on optimized TiO2 compact film (by 2000 cycles ALD) can achieve power conversion efficiencies (PCEs) of as high as 7.82%. Furthermore, they can maintain over 96% of their initial PCE after 651 h (about 1 month) storage in ambient air, thus exhibiting excellent long-term stability.

  13. Inherent substrate-dependent growth initiation and selective-area atomic layer deposition of TiO{sub 2} using “water-free” metal-halide/metal alkoxide reactants

    Energy Technology Data Exchange (ETDEWEB)

    Atanasov, Sarah E.; Kalanyan, Berç; Parsons, Gregory N., E-mail: gnp@ncsu.edu [Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27695-7905 (United States)

    2016-01-15

    Titanium dioxide atomic layer deposition (ALD) is shown to proceed selectively on oxidized surfaces with minimal deposition on hydrogen-terminated silicon using titanium tetrachloride (TiCl{sub 4}) and titanium tetra-isopropoxide [Ti(OCH(CH{sub 3}){sub 2}){sub 4}, TTIP] precursors. Ex situ x-ray photoelectron spectroscopy shows a more rapid ALD nucleation rate on both Si–OH and Si–H surfaces when water is the oxygen source. Eliminating water delays the oxidation of the hydrogen-terminated silicon, thereby impeding TiO{sub 2} film growth. For deposition at 170 °C, the authors achieve ∼2 nm of TiO{sub 2} on SiO{sub 2} before substantial growth takes place on Si–H. On both Si–H and Si–OH, the surface reactions proceed during the first few TiCl{sub 4}/TTIP ALD exposure steps where the resulting products act to impede subsequent growth, especially on Si–H surfaces. Insight from this work helps expand understanding of “inherent” substrate selective ALD, where native differences in substrate surface reaction chemistry are used to promote desired selective-area growth.

  14. Representation of reaction abilities for Al--Ti binary melts based on the atom--molecule coexistence theory%基于原子和分子共存理论的Al--Ti熔体反应能力表征

    Institute of Scientific and Technical Information of China (English)

    段生朝; 陈虎兵; 郭汉杰; 连云飞

    2016-01-01

    A thermodynamic model is proposed for calculating the mass action concentration of structural units in the Al-Ti binary melt system based on the atom-molecule coexistence theory. The standard equilibrium constants of reactions for forming three associat-ed molecules as Al3 Ti, AlTi, and Al11 Ti5 in the Al-Ti binary melt system at the temperature of 2073 to 2273 K are calculated based on the activity reported in the literature, and the expressions of the standard molar Gibbs free energy change of reactions are obtained. Meanwhile, the calculated mass action concentrations NAl and NTi of Al and Ti are compared with the reported activities of both Al and Ti in the full composition range of the Al-Ti binary melt system at different temperatures from the literature. The results show that the calculated mass action concentrations NAl and NTi are in agreement with the activities aAl and aTi in the reported literature. The relation-ship between the calculated mass action concentration Ni and the calculated equilibrium amount of substance ni of Al3 Ti and Al11 Ti5 in the Al-Ti binary melt system is rod-type. However, the relationship between the calculated mass action concertation NAlTi and the cal-culated equilibrium amount of substance nAlTi in this binary melt system is spindle-type.%基于原子和分子共存理论建立计算Al- Ti二元合金系结构单元质量作用浓度的热力学模型。利用文献报道的2073、2173和2273 K下Al-Ti二元系的活度计算了生成Al3 Ti、AlTi和Al11 Ti5反应的平衡常数,并进一步得到其标准摩尔吉布斯自由能的表达式。使用文献报道的不同温度下Al-Ti二元合金系全浓度范围内组元Al和Ti的活度aAl和aTi与原子和分子共存理论定义的质量作用浓度NAl和NTi进行比较。结果表明:在Al-Ti二元合金熔体全浓度范围内计算得到的质量作用浓度NAl和NTi与文献报道的活度符合很好。同时,计算得到的Al-Ti二

  15. UV light induced insulator-metal transition in ultra-thin ZnO/TiOx stacked layer grown by atomic layer deposition

    Science.gov (United States)

    Saha, D.; Misra, P.; Joshi, M. P.; Kukreja, L. M.

    2016-08-01

    In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1-7) of ZnO/TiOx layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O2 and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ˜ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent

  16. Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System

    Science.gov (United States)

    Wang, Lai-Guo; Zhang, Wei; Chen, Yan; Cao, Yan-Qiang; Li, Ai-Dong; Wu, Di

    2017-01-01

    In this work, a kind of new memristor with the simple structure of Pt/HfOx/ZnOx/TiN was fabricated completely via combination of thermal-atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). The synaptic plasticity and learning behaviors of Pt/HfOx/ZnOx/TiN memristive system have been investigated deeply. Multilevel resistance states are obtained by varying the programming voltage amplitudes during the pulse cycling. The device conductance can be continuously increased or decreased from cycle to cycle with better endurance characteristics up to about 3 × 103 cycles. Several essential synaptic functions are simultaneously achieved in such a single double-layer of HfOx/ZnOx device, including nonlinear transmission properties, such as long-term plasticity (LTP), short-term plasticity (STP), and spike-timing-dependent plasticity. The transformation from STP to LTP induced by repetitive pulse stimulation is confirmed in Pt/HfOx/ZnOx/TiN memristive device. Above all, simple structure of Pt/HfOx/ZnOx/TiN by ALD technique is a kind of promising memristor device for applications in artificial neural network.

  17. The Investigations of the Si and C Atoms on the AlCo2Ti Electronic Structure%元素Si和C对AlCo2Ti晶体结构的理论研究

    Institute of Scientific and Technical Information of China (English)

    付宏志; 滕敏

    2009-01-01

    用广义梯度近似密度泛函和全势能线性缀加平面波方法研究了元素Si和C对AlCo2Ti晶体构的电子结构影响.,我们分别对杂质元素Si和C替代晶体AlCo2Ti中的Ti(1/2,1/2, 1/2)位进行了对比研究.同时,对杂质元素Si和C对晶体AlCo2Ti的晶格常数、体弹模量和原子之间的化学键产生的作用进行了探讨.%The electronic structures of the ternary (Hume-Rothery) L21-phase compound AlCo2Ti are calculated by first-principles using full potential linearized augmented plane wave (FLAPW) method with the generalized gradient approximation (GGA). The doping of Si and C substituting Ti atom are studied in order to give an insight in the understanding of hardening with the presence of small radius atoms. The effects of these defects on lattice parameters, bulk modulus, chemical bindings, and density of states (DOS) are studied.

  18. Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

    Energy Technology Data Exchange (ETDEWEB)

    Ghrib, M., E-mail: mondherghrib@yahoo.fr [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Gaidi, M.; Ghrib, T.; Khedher, N. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Ben Salam, M. [L3M, Department of Physics, Faculty of Sciences of Bizerte, 7021 Zarzouna (Tunisia); Ezzaouia, H. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

    2011-08-15

    Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

  19. Pt-Ti/ALD-Al2O3/p-Si MOS Capacitors for Future ULSI Technology

    Directory of Open Access Journals (Sweden)

    Ashok M. Mahajan

    2011-01-01

    Full Text Available The high dielectric constant (high-k thin film of Al2O3 was deposited by using Plasma enhanced atomic layer deposition (PE-ALD technique. The electron beam evaporation system was used to deposit the Pt-Ti metal to fabricate the Pt-Ti/Al2O3/Si MOS capacitors. Thickness measurement of Al2O3 gate dielectric was carried out with variable angle spectroscopic ellipsometry, which is measured to be 2.83 nm. The MOS capacitors were characterized to evaluate the electrical properties using capacitance voltage (C-V analyzer at different measurement frequencies. Capacitance voltage measurement shows that, dielectric constant k ranges from 7.87 to 10.44. In CV curve a slight negative shift is observed in the flatband voltage because of presence of trap charges in the Al2O3 MOS capacitor. A lower equivalent oxide thickness (EOT of 1.057 nm is obtained for the fabricated Pt-Ti/ Al2O3 /Si MOS capacitors.

  20. MICROSTRUCTURE OF SiOx:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

    Institute of Scientific and Technical Information of China (English)

    MA ZHI-XUN; LIAO XIAN-BO; KONG GUANG-LIN; CHU JUN-HAO

    2000-01-01

    The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiOx:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx :H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO2 and HSi-O3. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.

  1. Electroluminescence and photoluminescence of conjugated polymer films prepared by plasma enhanced chemical vapor deposition of naphthalene

    CERN Document Server

    Rajabi, Mojtaaba; Firouzjah, Marzieh Abbasi; Hosseini, Seyed Iman; Shokri, Babak

    2012-01-01

    Polymer light-emitting devices were fabricated utilizing plasma polymerized thin films as emissive layers. These conjugated polymer films were prepared by RF Plasma Enhanced Chemical Vapor Deposition (PECVD) using naphthalene as monomer. The effect of different applied powers on the chemical structure and optical properties of the conjugated polymers was investigated. The fabricated devices with structure of ITO/PEDOT:PSS/ plasma polymerized Naphthalene/Alq3/Al showed broadband Electroluminescence (EL) emission peaks with center at 535-550 nm. Using different structural and optical tests, connection between polymers chemical structure and optical properties under different plasma powers has been studied. Fourier transform infrared (FTIR) and Raman spectroscopies confirmed that a conjugated polymer film with a 3-D cross-linked network was developed. By increasing the power, products tended to form as highly cross-linked polymer films. Photoluminescence (PL) spectra of plasma polymers showed different excimerc ...

  2. Microwave plasma-enhanced chemical vapour deposition growth of carbon nanostructures

    Directory of Open Access Journals (Sweden)

    Shivan R. Singh

    2010-05-01

    Full Text Available The effect of various input parameters on the production of carbon nanostructures using a simple microwave plasma-enhanced chemical vapour deposition technique has been investigated. The technique utilises a conventional microwave oven as the microwave energy source. The developed apparatus is inexpensive and easy to install and is suitable for use as a carbon nanostructure source for potential laboratory-based research of the bulk properties of carbon nanostructures. A result of this investigation is the reproducibility of specific nanostructures with the variation of input parameters, such as carbon-containing precursor and support gas flow rate. It was shown that the yield and quality of the carbon products is directly controlled by input parameters. Transmission electron microscopy and scanning electron microscopy were used to analyse the carbon products; these were found to be amorphous, nanotubes and onion-like nanostructures.

  3. High quality plasma-enhanced chemical vapor deposited silicon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Cotler, T.J.; Chapple-Sokol, J. (IBM General Technology Division, Hopewell Junction, NY (United States))

    1993-07-01

    The qualities of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films can be improved by increasing the deposition temperature. This report compares PECVD silicon nitride films to low pressure chemical vapor deposited (LPCVD) films. The dependence of the film properties on process parameters, specifically power and temperature, are investigated. The stress is shown to shift from tensile to compressive with increasing temperature and power. The deposition rate, uniformity, wet etch rate, index of refraction, composition, stress, hydrogen content, and conformality are considered to evaluate the film properties. Temperature affects the hydrogen content in the films by causing decreased incorporation of N-H containing species whereas the dependence on power is due to changes in the gas-phase precursors. All PECVD film properties, with the exception of conformality, are comparable to those of LPCVD films.

  4. Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

    Science.gov (United States)

    Lupina, G.; Strobel, C.; Dabrowski, J.; Lippert, G.; Kitzmann, J.; Krause, H. M.; Wenger, Ch.; Lukosius, M.; Wolff, A.; Albert, M.; Bartha, J. W.

    2016-05-01

    Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide conformal coating of graphene with Si layers as thin as 20 nm without any additional seed layer. The RF plasma process results in amorphization of the graphene layer. In contrast, the VHF process keeps the high crystalline quality of the graphene layer almost intact. Correlation analysis of Raman 2D and G band positions indicates that Si deposition induces reduction of the initial doping in graphene and an increase of compressive strain. Upon rapid thermal annealing, the amorphous Si layer undergoes dehydrogenation and transformation into a polycrystalline film, whereby a high crystalline quality of graphene is preserved.

  5. Preparation of carbon nanotubes with different morphology by microwave plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M. [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, 71 Al-Farabi av., 050038 Almaty (Kazakhstan); Institute of Physics and Technology, Ibragimov Street 11, 050032 Almaty (Kazakhstan); Mansurov, Zulkhair [Al-Farabi Kazakh National University, 71 Al-Farabi av., 050038 Almaty (Kazakhstan); Tokmoldin, S.Zh. [Institute of Physics and Technology, Ibragimov Street 11, 050032 Almaty (Kazakhstan)

    2010-04-15

    In this work we present a part of our results about the preparation of carbon nanotube with different morphologies by using microwave plasma enhanced chemical vapour deposition MPECVD. Well aligned, curly, carbon nanosheets, coiled carbon sheets and carbon microcoils have been prepared. We have investigated the effect of the different growth condition parameters such as the growth temperature, pressure and the hydrogen to methane flow rate ratio on the morphology of the carbon nanotubes. The results showed that there is a great dependence of the morphology of carbon nanotubes on these parameters. The yield of the carbon microcoils was high when the growth temperature was 700 C. There is a linear relation between the growth rate and the methane to hydrogen ratio. The effect of the gas pressure on the CNTs was also studied. Our samples were investigated by scanning electron microscope and Raman spectroscopy (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Wang Jin-Liang; Wu Er-Xing

    2007-01-01

    The B-and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) are prepared by plasma-enhanced chemical vapour deposition (PECVD) .The microstructures of doped nc-Si:H films are carefully and systematically char acterized by using high resolution electron microscopy (HREM) ,Raman scattering,x-ray diffraction (XRD) ,Auger electron spectroscopy (AES) ,and resonant nucleus reaction (RNR) .The results show that as the doping concentration of PH3 increases,the average grain size (d) tends to decrease and the crystalline volume percentage (Xc) increases simultaneously.For the B-doped samples,as the doping concentration of B2H6 increases,no obvious change in the value of d is observed,but the value of Xc is found to decrease.This is especially apparent in the case of heavy B2H6 doped samples,where the films change from nanocrystalline to amorphous.

  7. Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

    Directory of Open Access Journals (Sweden)

    Chia-Man Chou

    2017-07-01

    Full Text Available We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD incorporated with radio-frequency (r.f.-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr. High oxygen vapor pressure (150 mTorr and low r.f. power (10 W are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

  8. Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

    Science.gov (United States)

    Chou, Chia-Man; Lai, Chih-Chang; Chang, Chih-Wei; Wen, Kai-Shin; Hsiao, Vincent K. S.

    2017-07-01

    We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

  9. Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN

    Energy Technology Data Exchange (ETDEWEB)

    Colon, Albert; Stan, Liliana; Divan, Ralu; Shi, Junxia

    2016-11-01

    Gate insulation/surface passivation in AlGaN/GaN and InAlN/GaN heterojunction field-effect transistors is a major concern for passivation of surface traps and reduction of gate leakage current. However, finding the most appropriate gate dielectric materials is challenging and often involves a compromise of the required properties such as dielectric constant, conduction/valence band-offsets, or thermal stability. Creating a ternary compound such as Ti-Al-O and tailoring its composition may result in a reasonably good gate material in terms of the said properties. To date, there is limited knowledge of the performance of ternary dielectric compounds on AlGaN/GaN and even less on InAlN/GaN. To approach this problem, the authors fabricated metal-insulator-semiconductor heterojunction (MISH) capacitors with ternary dielectrics Ti-Al-O of various compositions, deposited by atomic layer deposition (ALD). The film deposition was achieved by alternating cycles of TiO2 and Al2O3 using different ratios of ALD cycles. TiO2 was also deposited as a reference sample. The electrical characterization of the MISH capacitors shows an overall better performance of ternary compounds compared to the pure TiO2. The gate leakage current density decreases with increasing Al content, being similar to 2-3 orders of magnitude lower for a TiO2:Al2O3 cycle ratio of 2:1. Although the dielectric constant has the highest value of 79 for TiO2 and decreases with increasing the number of Al2O3 cycles, it is maintaining a relatively high value compared to an Al2O3 film. Capacitance voltage sweeps were also measured in order to characterize the interface trap density. A decreasing trend in the interface trap density was found while increasing Al content in the film. In conclusion, our study reveals that the desired high-kappa properties of TiO2 can be adequately maintained while improving other insulator performance factors. The ternary compounds may be an excellent choice as a gate material for both

  10. PIIID-formed (Ti, O)/Ti, (Ti, N)/Ti and (Ti, O, N)/Ti coatings on NiTi shape memory alloy for medical applications.

    Science.gov (United States)

    Sun, Tao; Wang, Lang-Ping; Wang, Min; Tong, Ho-Wang; Lu, William W

    2012-08-01

    (Ti, O)/Ti, (Ti, N)/Ti and (Ti, O, N)/Ti composite coatings were fabricated on NiTi shape memory alloy via plasma immersion ion implantation and deposition (PIIID). Surface morphology of samples was investigated using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Cross-sectional morphology indicated that the PIIID-formed coatings were dense and uniform. X-ray diffraction (XRD) was used to characterize the phase composition of samples. X-ray photoelectron spectroscopy (XPS) results showed that the surface of coated NiTi SMA samples was Ni-free. Nanoindentation measurements and pin-on-disc tests were carried out to evaluate mechanical properties and wear resistance of coated NiTi SMA, respectively. For the in vitro biological assessment of the composite coatings in terms of cell morphology and cell viability, osteoblast-like SaOS-2 cells and breast cancer MCF-7 cells were cultured on NiTi SMA samples, respectively. SaOS-2 cells attached and spread better on coated NiTi SMA. Viability of MCF-7 cells showed that the PIIID-formed composite coatings were noncytotoxic and coated samples were more biocompatible than uncoated samples.

  11. Antibacterial activity and cell compatibility of TiZrN, TiZrCN, and TiZr-amorphous carbon coatings

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Heng-Li [School of Dentistry, China Medical University, Taichung 404, Taiwan (China); Department of Bioinformatics and Medical Engineering, Asia University, Taichung 41354, Taiwan (China); Chang, Yin-Yu, E-mail: yinyu@nfu.edu.tw [Department of Mechanical and Computer-aided Engineering, National Formosa University, Yunlin 632, Taiwan (China); Liu, Jia-Xu [Department of Mechanical and Computer-aided Engineering, National Formosa University, Yunlin 632, Taiwan (China); Tsai, Ming-Tzu [Department of Biomedical Engineering, Hungkuang University, Taichung 433, Taiwan (China); Lai, Chih-Ho [Department of Microbiology and Immunology, Graduate Institute of Biomedical Sciences, Chang Gung University, Taoyuan, Taiwan (China)

    2015-12-01

    A cathodic-arc evaporation system with plasma-enhanced duct equipment was used to deposit TiZrN, TiZrCN, and TiZr/a-C coatings. Reactive gases (N{sub 2} and C{sub 2}H{sub 2}) activated by the Ti and Zr plasma in the evaporation process was used to deposit the TiZrCN and TiZr/a-C coatings with different C and nitrogen contents. The crystalline structures and bonding states of coatings were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. The microbial activity of the coatings was evaluated against Staphylococcus aureus (Gram-positive bacteria) and Actinobacillus actinomycetemcomitans (Gram-negative bacteria) by in vitro antibacterial analysis using a fluorescence staining method employing SYTO9 and a bacterial-viability test on an agar plate. The cell compatibility and morphology related to CCD-966SK cell-line human skin fibroblast cells on the coated samples were also determined using the 3-(4, 5-dimethylthiazol-2-yl)-2, 5-diphenyltetrazolium bromide assay, reverse-transcriptase-polymerase chain reaction, and scanning electron microscopy. The results suggest that the TiZrCN coatings not only possess better antibacterial performance than TiZrN and TiZr/a-C coatings but also maintain good compatibility with human skin fibroblast cells. - Highlights: • TiZrN, TiZrCN, and TiZr/a-C coatings were deposited using cathodic arc evaporation. • The TiZrCN showed a composite structure containing TiN, ZrN, and a-C. • The TiZrCN-coated Ti showed the least hydrophobicity among the samples. • The TiZrCN-coated Ti showed good human skin fibroblast cell viability. • The TiZrCN-coated Ti exhibited good antibacterial performance.

  12. Study on TiB/Ti interfacial microstructure of in situ synthesized (TiB+TiC)/Ti composite%原位(TiB+TiC)/Ti复合材料中TiB/Ti界面的微结构研究

    Institute of Scientific and Technical Information of China (English)

    吕维洁; 卞玉君; 等

    2001-01-01

    本文利用透射电镜(TEM)和高分辨透射电镜(HRTEM)研究了利用钛与碳化硼之间的自 蔓燃高温合成反应,经普通的熔炼工艺制备的(TiB+TiC)/Ti复合材料中TiB晶须与钛界面的 微观组织结构。结果发现:界面非常洁净,两侧晶体存在如下平行关系:[010]TiB //[0110]Ti,(100)TiB//(2110)Ti,(001)TiB// (0002)Ti 和[001]TiB//[0110]Ti,(010)TiB//(2110)Ti ,(200)TiB //(0002)Ti。利用凝固理论分析了TiB/Ti界面微结构的形成机制,较好地解释了原 位(TiB+TiC)/Ti复合材料中TiB/Ti界面结合较好的原因。%A common casting technique has been applied to fabricate in situ synthesized (TiB+TiC)/Ti composite utilizing the self-propagation high-temperature synthe sis between Ti and B4C. The microstructure of TiB/Ti interface has been inve stigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM). The TiB/Ti interfaces we re atomically flat, sharp and free from any interfacial phase. TiB phase was wel l bonded with the matrix. The following consistent crystallographic orientation r e lationships between TiB and Ti have been observed by HREM, namely, [010]Ti B//[0110]Ti,(100)TiB//(2110)Ti,(001)TiB// (0002)Ti and [001]TiB//[0110]Ti,(010)TiB//(2110)T i,(200) TiB//(0002)Ti. The formation mechanism of TiB/Ti interfaces has been ana lyzed by solidification theory. The interfaces of TiB/Ti were formed during bina ry eutectic and ternary eutectic.

  13. Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Härkönen, J. [Helsinki Institute of Physics, CMS Upgrade Project, Helsinki (Finland); Ott, J. [Helsinki Institute of Physics, CMS Upgrade Project, Helsinki (Finland); Laboratory of Radio Chemistry, University of Helsinki (Finland); Mäkelä, M. [Laboratory of Inorganic Chemistry, University of Helsinki (Finland); Arsenovich, T.; Gädda, A.; Peltola, T. [Helsinki Institute of Physics, CMS Upgrade Project, Helsinki (Finland); Tuovinen, E. [Helsinki Institute of Physics, CMS Upgrade Project, Helsinki (Finland); VTT Technical Research Centre of Finland, Microsystem and Nanoelectronics (Finland); Luukka, P.; Tuominen, E. [Helsinki Institute of Physics, CMS Upgrade Project, Helsinki (Finland); Junkes, A. [Institute for Experimental Physics, University of Hamburg (Germany); Niinistö, J.; Ritala, M. [Laboratory of Inorganic Chemistry, University of Helsinki (Finland)

    2016-09-21

    In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al{sub 2}O{sub 3} field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO{sub 2}, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al{sub 2}O{sub 3} field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al{sub 2}O{sub 3} provides equally low effective surface recombination velocity as thermally oxidized Si/SiO{sub 2} interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MΩ resistances with a few µm of physical size required in ultra-fine pitch pixel detectors.

  14. Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

    Science.gov (United States)

    Härkönen, J.; Ott, J.; Mäkelä, M.; Arsenovich, T.; Gädda, A.; Peltola, T.; Tuovinen, E.; Luukka, P.; Tuominen, E.; Junkes, A.; Niinistö, J.; Ritala, M.

    2016-09-01

    In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MΩ resistances with a few μm of physical size required in ultra-fine pitch pixel detectors.

  15. Surface Acidity and Properties of TiO2/SiO2 Catalysts Prepared by Atomic Layer Deposition: UV-visible Diffuse Reflectance, DRIFTS, and Visible Raman Spectroscopy Studies

    Science.gov (United States)

    2009-06-15

    commercial anatase titania was also measured. The edge energy (Eg) for allowed transitions was determined by finding the intercept of the straight...150 °C (xTS-150C, where x is the number of cycles (1, 4, 10, and 20)) are depicted in Figure 1, where silica gel and anatase titania were also measured...titanium (atoms/nm2) BET surface area (m2/g) pore diameter (Å) chlorine (wt %, XRF) Eg (eV) silica powder 91.6 301.5 anatase TiO2 3.47 1TS-TTIP-150C 1.92

  16. Quasi-two-dimensional electron gas at the interface of γ-Al{sub 2}O{sub 3}/SrTiO{sub 3} heterostructures grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G., E-mail: ekerdt@che.utexas.edu [Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Goble, Nicholas J.; Gao, Xuan P. A. [Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106 (United States); Posadas, Agham; Kormondy, Kristy J.; Demkov, Alexander A. [Department of Physics, University of Texas at Austin, Austin, Texas 78712 (United States); Lu, Sirong [School of Engineering for Matter, Transport and Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Jordan-Sweet, Jean [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Smith, David J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

    2015-09-21

    We report the formation of a quasi-two-dimensional electron gas (2-DEG) at the interface of γ-Al{sub 2}O{sub 3}/TiO{sub 2}-terminated SrTiO{sub 3} (STO) grown by atomic layer deposition (ALD). The ALD growth of Al{sub 2}O{sub 3} on STO(001) single crystal substrates was performed at temperatures in the range of 200–345 °C. Trimethylaluminum and water were used as co-reactants. In situ reflection high energy electron diffraction, ex situ x-ray diffraction, and ex situ cross-sectional transmission electron microscopy were used to determine the crystallinity of the Al{sub 2}O{sub 3} films. As-deposited Al{sub 2}O{sub 3} films grown above 300 °C were crystalline with the γ-Al{sub 2}O{sub 3} phase. In situ x-ray photoelectron spectroscopy was used to characterize the Al{sub 2}O{sub 3}/STO interface, indicating that a Ti{sup 3+} feature in the Ti 2p spectrum of STO was formed after 2–3 ALD cycles of Al{sub 2}O{sub 3} at 345 °C and even after the exposure to trimethylaluminum alone at 300 and 345 °C. The interface quasi-2-DEG is metallic and exhibits mobility values of ∼4 and 3000 cm{sup 2} V{sup −1} s{sup −1} at room temperature and 15 K, respectively. The interfacial conductivity depended on the thickness of the Al{sub 2}O{sub 3} layer. The Ti{sup 3+} signal originated from the near-interfacial region and vanished after annealing in an oxygen environment.

  17. The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells

    KAUST Repository

    Brennan, Thomas P.

    2012-01-01

    Atomic layer deposition (ALD) was used to fabricate Al 2O 3 recombination barriers in solid-state dye-sensitized solar cells (ss-DSSCs) employing an organic hole transport material (HTM) for the first time. Al 2O 3 recombination barriers of varying thickness were incorporated into efficient ss-DSSCs utilizing the Z907 dye adsorbed onto a 2 μm-thick nanoporous TiO 2 active layer and the HTM spiro-OMeTAD. The impact of Al 2O 3 barriers was also studied in devices employing different dyes, with increased active layer thicknesses, and with substrates that did not undergo the TiCl 4 surface treatment. In all instances, electron lifetimes (as determined by transient photovoltage measurements) increased and dark current was suppressed after Al 2O 3 deposition. However, only when the TiCl 4 treatment was eliminated did device efficiency increase; in all other instances efficiency decreased due to a drop in short-circuit current. These results are attributed in the former case to the similar effects of Al 2O 3 ALD and the TiCl 4 surface treatment whereas the insulating properties of Al 2O 3 hinder charge injection and lead to current loss in TiCl 4-treated devices. The impact of Al 2O 3 barrier layers was unaffected by doubling the active layer thickness or using an alternative ruthenium dye, but a metal-free donor-π-acceptor dye exhibited a much smaller decrease in current due to its higher excited state energy. We develop a model employing prior research on Al 2O 3 growth and dye kinetics that successfully predicts the reduction in device current as a function of ALD cycles and is extendable to different dye-barrier systems. © This journal is the Owner Societies 2012.

  18. Plasma-enhanced chemical vapor deposited silicon oxynitride films for optical waveguide bridges for use in mechanical sensors

    DEFF Research Database (Denmark)

    Storgaard-Larsen, Torben; Leistiko, Otto

    1997-01-01

    In this paper the influence of RF power, ammonia flow, annealing temperature, and annealing time on the optical and mechanical properties of plasma-enhanced chemically vapor deposited silicon oxynitride films, is presented. A low refractive index (1.47 to 1.48) film having tensile stress has been...

  19. Low-temperature synthesis of diamond films by photoemission-assisted plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kawata, Mayuri, E-mail: kawata@mail.tagen.tohoku.ac.jp; Ojiro, Yoshihiro; Ogawa, Shuichi; Takakuwa, Yuji [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Masuzawa, Tomoaki; Okano, Ken [International Christian University, 3-10-2 Osawa, Mitaka 181-8585 (Japan)

    2014-03-15

    Photoemission-assisted plasma-enhanced chemical vapor deposition (PA-PECVD), a process in which photoelectrons emitted from a substrate irradiated with ultraviolet light are utilized as a trigger for DC discharge, was investigated in this study; specifically, the DC discharge characteristics of PA-PECVD were examined for an Si substrate deposited in advance through hot-filament chemical vapor deposition with a nitrogen-doped diamond layer of thickness ∼1 μm. Using a commercially available Xe excimer lamp (hν = 7.2 eV) to illuminate the diamond surface with and without hydrogen termination, the photocurrents were found to be 3.17 × 10{sup 12} and 2.11 × 10{sup 11} electrons/cm{sup 2}/s, respectively. The 15-fold increase in photocurrent was ascribed to negative electron affinity (NEA) caused by hydrogen termination on the diamond surfaces. The DC discharge characteristics revealed that a transition bias voltage from a Townsend-to-glow discharge was considerably decreased because of NEA (from 490 to 373 V for H{sub 2} gas and from 330 to 200 V for Ar gas), enabling a reduction in electric power consumption needed to synthesize diamond films through PA-PECVD. In fact, the authors have succeeded in growing high-quality diamond films of area 2.0 cm{sup 2} at 540 °C with a discharge power of only 1.8 W, plasma voltage of 156.4 V, and discharge current of 11.7 mA under the glow discharge of CH{sub 4}/H{sub 2}/Ar mixed gases. In addition to having only negligible amounts of graphite and amorphous carbon, the diamond films exhibit a relatively high diamond growth rate of 0.5 μm/h at temperatures as low as 540 °C, which is attributed to Ar{sup +} ions impinging on the diamond surface, and causing the removal of hydrogen atoms from the surface through sputtering. This process leads to enhanced CH{sub x} radical adsorption, because the sample was applied with a negative potential to accelerate photoelectrons in PA-PECVD.

  20. Adsorption sites of single noble metal atoms on the rutile TiO2 (1 1 0) surface influenced by different surface oxygen vacancies.

    Science.gov (United States)

    Matsunaga, Katsuyuki; Chang, Teng-Yuan; Ishikawa, Ryo; Dong, Qian; Toyoura, Kazuaki; Nakamura, Atsutomo; Ikuhara, Yuichi; Shibata, Naoya

    2016-05-05

    Atomic adsorption of Au and Pt on the rutile (1 1 0) surface was investigated by atomic-resolution aberration-corrected scanning transmission electron microscopy (STEM) measurements combined with density functional theory calculations. Au single atoms were deposited on the surface in a vacuum condition, and the observed results were compared with Pt single atoms on the same surface prepared by the same experimental manner. It was found that Au single atoms are stably adsorbed only at the bridging oxygen vacancy sites, which is quite different from Pt single atoms exhibiting the most frequently observed adsorption at the basal oxygen vacancy sites. Such a difference in oxygen-vacancy effect between Au and Pt can be explained by electronic structures of the surface vacancies as well as characters of outermost atomic orbitals of Au and Pt.

  1. Evidence for the intrinsic nature of band-gap states electrochemically observed on atomically flat TiO2(110) surfaces.

    Science.gov (United States)

    Takata, Shintaro; Miura, Yoshihiro; Matsumoto, Yuji

    2014-12-07

    Using an ultra-high vacuum (UHV) electrochemistry approach with pulsed laser deposition (PLD), we investigated the band-gap state for TiO2(110). In the PLD chamber, a TiO2(110) surface was cleaned by annealing in O2 enough for it to exhibit a sharp (1 × 1) reflection high energy electron diffraction (RHEED) pattern. The cleaned TiO2(110)-(1 × 1) sample then underwent electrochemical measurements without exposure to air, showing the band-gap state at -0.14 V vs. Ag by Mott-Schottky plot analysis. The band-gap state gradually disappeared under UV illumination at +0.6 V vs. Ag due to photoetching, and reappeared on reduction in a vacuum and/or deposition of a fresh TiO2 film. These results indicated that the electrochemically observed band-gap state for TiO2(110) was a defect state due to oxygen deficiency, most probably identical to that observed under UHV, which does not necessarily exist on the surface. A quantitative analysis of the defect density suggests that the origin of this defect state is not the surface bridging hydroxyls or oxygen vacancies, but rather the interstitial Ti(3+) ions in the subsurface region.

  2. Revealing the atomic structure and strontium distribution in nanometer-thick La0.8Sr0.2CoO3−δ grown on (001)-oriented SrTiO3

    KAUST Repository

    Feng, Zhenxing

    2014-01-01

    Surface segregation in metal oxides can greatly influence the oxygen transport and surface oxygen exchange kinetics critical to the performance of solid-state devices such as oxygen permeation membranes and solid oxide fuel/electrolytic cell electrodes. Unfortunately detecting elemental distributions at the atomic scale near the surface remains challenging, which hampers the understanding of underpinning mechanisms and control of surface segregation for the design of high-performance materials. Using the coherent Bragg rod analysis (COBRA) method, we report the first direct 3D atomic imaging of a 4 nm-thick "La0.8Sr0.2CoO 3-δ"/SrTiO3 epitaxial film. Of significance, energy differential COBRA revealed pronounced Sr segregation (La 1-xSrxCoO3-δ, x ∼ 0.4) in the four unit cells from the top surface while complete Sr depletion was detected in the five unit cells from the "La0.8Sr0.2CoO 3-δ"/SrTiO3 interface. The drastic strontium compositional changes in the film were associated with large changes in the atomic positions of apical oxygen sites in the perovskite structure. Such Sr segregation tendencies toward the surface were also found in nominal "La0.6Sr0.4CoO3-δ" thin films, which can greatly enhance the surface oxygen exchange properties of oxides. The results presented here show that COBRA and the differential COBRA methods can be used to investigate a variety of electrochemically active systems providing atomic scale structural and chemical information that can help understand the physical and chemical properties of these systems and serve as a basis for comparison with DFT calculations. © 2014 The Royal Society of Chemistry.

  3. Structural and magnetic properties of Ti12M clusters (M=Sc to Zn)

    Science.gov (United States)

    Sun, Houqian; Xu, Ning

    2016-12-01

    The geometries, electronic, and magnetic properties of the 3d atom doped icosahedron (ICO) Ti12M (M=Sc to Zn), where a dopant atom replaces either the centra l(Ti12Mc) or surface (Ti12Ms) Ti atom in ICO Ti13 cluster, have been systematically investigated by using the density functional theory. The structures of all the optimized Ti12Mc and Ti12Ms clusters are distorted ICO. Sc, Ni, Cu, and Zn atoms prefer to displace surface Ti atom, V, Cr, Mn, and Fe atoms prefer to displace central Ti atom. The position of impurity atom depends on the strength of the interaction between the central atom and the surface atoms. As compared to the pure Ti13 cluster, Ti12Mc and Ti12Ms (M=V, Fe, Co, and Ni) clusters are more stable, Ti12Mc and Ti12Ms (M=Sc, Cr, Mn, Cu, and Zn) are less stable. Both Ti12Nis and Ti12Nic are magic clusters, which originate from their electronic as well as geometric closed shells. Because the exchange interaction prevails over the crystal field in Ti12M clusters, the valence electrons fill molecular orbitals in terms of Hund's rule of maximum spin.

  4. Atomic layer deposition of Al{sub 2}O{sub 3} and Al{sub x}Ti{sub 1-x}O{sub y} thin films on N{sub 2}O plasma pretreated carbon materials

    Energy Technology Data Exchange (ETDEWEB)

    Markeev, Andrey M.; Chernikova, Anna G.; Chouprik, Anastasya A.; Zaitsev, Sergey A.; Ovchinnikov, Dmitry V.; Althues, Holger; Doerfler, Susanne [Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region 141700 (Russian Federation); Fraunhofer Institute for Material and Beam Technology (IWS) of Dresden, Winterbergstr. 28, Dresden 01277 (Germany)

    2013-01-15

    A mild N{sub 2}O plasma treatment technique (low power and low substrate temperature) for carbon materials' (including graphite and carbon nanotubes) functionalization followed by subsequent high-k dielectric atomic layer deposition (ALD) was developed. It was shown that N{sub 2}O plasma carbon functionalization leads to the formation of epoxide and carboxylic groups on the carbon surface which act as active centers for ALD and, as a result, conformal and uniform Al{sub 2}O{sub 3} and Ti{sub x}Al{sub 1-x}O{sub y} films' growth occurred on the carbon surfaces. It was shown that the electrical properties of multinary Ti{sub x}Al{sub 1-x}O{sub y} oxides are more promising in comparison to single Al{sub 2}O{sub 3} oxide. Some electrical properties of the Ti{sub x}Al{sub 1-x}O{sub y} films observed were a high dielectric constant {approx}19, low leakage current density (<3 Multiplication-Sign 10{sup -5} A/cm{sup 2} at 1 MV/cm), and high breakdown field ({approx}5.5 MV/cm).

  5. Electrical transport properties of graphene nanowalls grown at low temperature using plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Zhao, Rong; Ahktar, Meysam; Alruqi, Adel; Dharmasena, Ruchira; Jasinski, Jacek B.; Thantirige, Rukshan M.; Sumanasekera, Gamini U.

    2017-05-01

    In this work, we report the electrical transport properties of uniform and vertically oriented graphene (graphene nanowalls) directly synthesized on multiple substrates including glass, Si/SiO2 wafers, and copper foils using radio-frequency plasma enhanced chemical vapor deposition (PECVD) with methane (CH4) as the precursor at relatively low temperatures. The temperature for optimum growth was established with the aid of transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy. This approach offers means for low-cost graphene nanowalls growth on an arbitrary substrate with the added advantage of transfer-free device fabrication. The temperature dependence of the electrical transport properties (resistivity and thermopower) were studied in the temperature range, 30-300 K and analyzed with a combination of 2D-variable range hopping (VRH) and thermally activated (TA) conduction mechanisms. An anomalous temperature dependence of the thermopower was observed for all the samples and explained with a combination of a diffusion term having a linear temperature dependence plus a term with an inverse temperature dependence.

  6. Switchable hydrophobic-hydrophilic layer obtained onto porous alumina by plasma-enhanced fluorination

    Institute of Scientific and Technical Information of China (English)

    A.TRESSAUD; C.LABRUG(E)RE; E.DURAND; C.BRIGOULEIX; H.ANDRIESSEN

    2009-01-01

    Conventional lithographic printing processes using porous alumina for offset applications generally use "wet" routes. Recently "dry" processes have been developed which are based on a heat-induced hydrophilic/oleophilic conversion of one or more layers of the coating so that a stronger affinity to-wards ink or water fountain is created at the exposed areas with respect to the surface of the unex-posed coating. Treatments involving rf plasma-enhanced fluorination (PEF) constitute exceptional tools for modifying the surface properties of materials. Many advantages of these techniques can be indeed outlined, when compared to more conventional methods: room-temperature reactions, chemical modi-fications limited to surface only without changing the bulk properties, possible non-equilibrium reac-tions. The influence of PEF treatments on porous alumina layer used in printing plates has been tested with various fluorinated gases (CF4, C3F8and C4F8) and characterized by XPS. The hydrophobic prop-erties of the fluorinated layer have been deduced from contact angle measurements. Using C4Fs rf-PEF treatment, the outmost surface of the hydrophilic alumina substrate used for lithographic printing is hydrophobized, or in other words, the hydrophilic substrate is converted into a support with hydro-phobic properties. Once being hydrophobized, the surface layer may be rendered hydrophilic using a heat pulse, thus giving rise to switchable hydrophobic-hydrophilic properties of the material.

  7. Plasma Enhanced Chemical Vapor Deposition Nanocrystalline Tungsten Carbide Thin Film and Its Electro-catalytic Activity

    Institute of Scientific and Technical Information of China (English)

    Huajun ZHENG; Chunan MA; Jianguo HUANG; Guohua LI

    2005-01-01

    Nanocrystalline tungsten carbide thin films were fabricated on graphite substrates by plasma enhanced chemical vapor deposition (PECVD) at H2 and Ar atmosphere, using WF6 and CH4 as precursors. The crystal phase, structure and chemical components of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive spectrometer (EDS), respectively. The results show that the film prepared at CH4/WF6concentration ratio of 20 and at 800℃ is composed of spherical particles with a diameter of 20~35 nm. Electrochemical investigations show that the electrochemical real surface area of electrode of the film is large, and the electrode of the film exhibits higher electro-catalytic activity in the reaction of methanol oxidation. The designated constant current of the film catalyst is 123.6 mA/cm2 in the mixture solution of H2SO4 and CH3OH at the concentration of 0.5 and 2.0 mol/L at 70℃, and the designated constant potential is only 0.306 V (vs SCE).

  8. Chain Assemblies from Nanoparticles Synthesized by Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition: The Computational View.

    Science.gov (United States)

    Mishin, Maxim V; Zamotin, Kirill Y; Protopopova, Vera S; Alexandrov, Sergey E

    2015-12-01

    This article refers to the computational study of nanoparticle self-organization on the solid-state substrate surface with consideration of the experimental results, when nanoparticles were synthesised during atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD). The experimental study of silicon dioxide nanoparticle synthesis by AP-PECVD demonstrated that all deposit volume consists of tangled chains of nanoparticles. In certain cases, micron-sized fractals are formed from tangled chains due to deposit rearrangement. This work is focused on the study of tangled chain formation only. In order to reveal their formation mechanism, a physico-mathematical model was developed. The suggested model was based on the motion equation solution for charged and neutral nanoparticles in the potential fields with the use of the empirical interaction potentials. In addition, the computational simulation was carried out based on the suggested model. As a result, the influence of such experimental parameters as deposition duration, particle charge, gas flow velocity, and angle of gas flow was found. It was demonstrated that electrical charges carried by nanoparticles from the discharge area are not responsible for the formation of tangled chains from nanoparticles, whereas nanoparticle kinetic energy plays a crucial role in deposit morphology and density. The computational results were consistent with experimental results.

  9. Conformal encapsulation of three-dimensional, bioresorbable polymeric scaffolds using plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Hawker, Morgan J; Pegalajar-Jurado, Adoracion; Fisher, Ellen R

    2014-10-21

    Bioresorbable polymers such as poly(ε-caprolactone) (PCL) have a multitude of potential biomaterial applications such as controlled-release drug delivery and regenerative tissue engineering. For such biological applications, the fabrication of porous three-dimensional bioresorbable materials with tunable surface chemistry is critical to maximize their surface-to-volume ratio, mimic the extracellular matrix, and increase drug-loading capacity. Here, two different fluorocarbon (FC) precursors (octofluoropropane (C3F8) and hexafluoropropylene oxide (HFPO)) were used to deposit FC films on PCL scaffolds using plasma-enhanced chemical vapor deposition (PECVD). These two coating systems were chosen with the intent of modifying the scaffold surfaces to be bio-nonreactive while maintaining desirable bulk properties of the scaffold. X-ray photoelectron spectroscopy showed high-CF2 content films were deposited on both the exterior and interior of PCL scaffolds and that deposition behavior is PECVD system specific. Scanning electron microscopy data confirmed that FC film deposition yielded conformal rather than blanket coatings as the porous scaffold structure was maintained after plasma treatment. Treated scaffolds seeded with human dermal fibroblasts (HDF) demonstrate that the cells do not attach after 72 h and that the scaffolds are noncytotoxic to HDF. This work demonstrates conformal FC coatings can be deposited on 3D polymeric scaffolds using PECVD to fabricate 3D bio-nonreactive materials.

  10. Facile plasma-enhanced deposition of ultrathin crosslinked amino acid films for conformal biometallization.

    Science.gov (United States)

    Anderson, Kyle D; Slocik, Joseph M; McConney, Michael E; Enlow, Jesse O; Jakubiak, Rachel; Bunning, Timothy J; Naik, Rajesh R; Tsukruk, Vladimir V

    2009-03-01

    A novel method for the facile fabrication of conformal, ultrathin, and uniform synthetic amino acid coatings on a variety of practical surfaces by plasma-enhanced chemical vapor deposition is introduced. Tyrosine, which is utilized as an agent to reduce gold nanoparticles from solution, is sublimed into the plasma field and directly deposited on a variety of substrates to form a homogeneous, conformal, and robust polyamino acid coating in a one-step, solvent-free process. This approach is applicable to many practical surfaces and allows surface-induced biometallization while avoiding multiple wet-chemistry treatments that can damage many soft materials. Moreover, by placing a mask over the substrate during deposition, the tyrosine coating can be micropatterned. Upon its exposure to a solution of gold chloride, a network of gold nanoparticles forms on the surface, replicating the initial micropattern. This method of templated biometallization is adaptable to a variety of practical inorganic and organic substrates, such as silicon, glass, nitrocellulose, polystyrene, polydimethylsiloxane, polytetrafluoroethylene, polyethylene, and woven silk fibers. No special pretreatment is necessary, and the technique results in a rapid, conformal amino acid coating that can be utilized for further biometallization.

  11. Control of interface nanoscale structure created by plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Peri, Someswara R; Akgun, Bulent; Satija, Sushil K; Jiang, Hao; Enlow, Jesse; Bunning, Timothy J; Foster, Mark D

    2011-09-01

    Tailoring the structure of films deposited by plasma-enhanced chemical vapor deposition (PECVD) to specific applications requires a depth-resolved understanding of how the interface structures in such films are impacted by variations in deposition parameters such as feed position and plasma power. Analysis of complementary X-ray and neutron reflectivity (XR, NR) data provide a rich picture of changes in structure with feed position and plasma power, with those changes resolved on the nanoscale. For plasma-polymerized octafluorocyclobutane (PP-OFCB) films, a region of distinct chemical composition and lower cross-link density is found at the substrate interface for the range of processing conditions studied and a surface layer of lower cross-link density also appears when plasma power exceeds 40 W. Varying the distance of the feed from the plasma impacts the degree of cross-linking in the film center, thickness of the surface layer, and thickness of the transition region at the substrate. Deposition at the highest power, 65 W, both enhances cross-linking and creates loose fragments with fluorine content higher than the average. The thickness of the low cross-link density region at the air interface plays an important role in determining the width of the interface built with a layer subsequently deposited atop the first.

  12. Switchable hydrophobic-hydrophilic layer obtained onto porous alumina by plasma-enhanced fluorination

    Institute of Scientific and Technical Information of China (English)

    A.; TRESSAUD; C.; LABRUGèRE; E.; DURAND; C.; BRIGOULEIX; H.; ANDRIESSEN

    2009-01-01

    Conventional lithographic printing processes using porous alumina for offset applications generally use "wet" routes. Recently "dry" processes have been developed which are based on a heat-induced hydrophilic/oleophilic conversion of one or more layers of the coating so that a stronger affinity to-wards ink or water fountain is created at the exposed areas with respect to the surface of the unex-posed coating. Treatments involving rf plasma-enhanced fluorination (PEF) constitute exceptional tools for modifying the surface properties of materials. Many advantages of these techniques can be indeed outlined, when compared to more conventional methods: room-temperature reactions, chemical modi-fications limited to surface only without changing the bulk properties, possible non-equilibrium reac-tions. The influence of PEF treatments on porous alumina layer used in printing plates has been tested with various fluorinated gases (CF4, C3F8 and C4F8) and characterized by XPS. The hydrophobic prop-erties of the fluorinated layer have been deduced from contact angle measurements. Using C4F8 rf-PEF treatment, the outmost surface of the hydrophilic alumina substrate used for lithographic printing is hydrophobized, or in other words, the hydrophilic substrate is converted into a support with hydro-phobic properties. Once being hydrophobized, the surface layer may be rendered hydrophilic using a heat pulse, thus giving rise to switchable hydrophobic-hydrophilic properties of the material.

  13. Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon

    Science.gov (United States)

    Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca i

    2017-01-01

    Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C. PMID:28262840

  14. Growth of nanocrystalline silicon carbide thin films by plasma enhanced chemical vapor deposition

    CERN Document Server

    Lee, S W; Moon, J Y; Ahn, S S; Kim, H Y; Shin, D H

    1999-01-01

    Nanocrystalline silicon carbide thin films have been deposited by plasma enhanced chemical vapor deposition (PECVD) using SiH sub 4 , CH sub 4 , and H sub 2 gases. The effects of gas mixing ratio (CH sub 4 /SiH sub 4), deposition temperature, and RF power on the film properties have been studied. The growth rate, refractive index, and the optical energy gap depends critically on the growth conditions. The dependence of the growth rate on the gas flow ratio is quite different from the results obtained for the growth using C sub 2 H sub 2 gas instead of CH sub 4. As the deposition temperature is increased from 300 .deg. C to 600 .deg. C, hydrogen and carbon content in the film decreases and as a result the optical gap decreases. At the deposition temperature of 600 .deg. C and RF power of 150 W, the film structure si nanocrystalline, As the result of the nanocrystallization the dark conductivity is greatly improved. The nanocrystalline silicon carbide thin films may be used for large area optoelectronic devices...

  15. RF plasma enhanced MOCVD of yttria stabilized zirconia thin films using octanedionate precursors and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Chopade, S.S. [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India); Nayak, C.; Bhattacharyya, D.; Jha, S.N.; Tokas, R.B.; Sahoo, N.K. [Atomic & Molecular Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India); Deo, M.N. [High Pressure & Synchrotron Radiation Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India); Biswas, A. [Atomic & Molecular Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India); Rai, Sanjay [Indus Synchrotron Utilization Division, RRCAT, Indore 452013 (India); Thulasi Raman, K.H.; Rao, G.M. [Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012 (India); Kumar, Niranjan [Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Patil, D.S., E-mail: dspatil@iitb.ac.in [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India)

    2015-11-15

    Highlights: • YSZ films are deposited by RF plasma MOCVD using Zr(tod){sub 4} and Y(tod){sub 3} precursors. • Films are deposited under the influence of RF self-bias on the substrates. • Films are characterized by different techniques. • Films properties are dependent on yttria content and film structure. - Abstract: Yttria stabilized zirconia thin films have been deposited by RF plasma enhanced MOCVD technique on silicon substrates at substrate temperature of 400 °C. Plasma of precursor vapors of (2,7,7-trimethyl-3,5-octanedionate) yttrium (known as Y(tod){sub 3}), (2,7,7-trimethyl-3,5-octanedionate) zirconium (known as Zr(tod){sub 4}), oxygen and argon gases is used for deposition. To the best of our knowledge, plasma assisted MOCVD of YSZ films using octanediaonate precursors have not been reported in the literature so far. The deposited films have been characterized by GIXRD, FTIR, XPS, FESEM, AFM, XANES, EXAFS, EDAX and spectroscopic ellipsometry. Thickness of the films has been measured by stylus profilometer while tribological property measurement has been done to study mechanical behavior of the coatings. Characterization by different techniques indicates that properties of the films are dependent on the yttria content as well as on the structure of the films.

  16. Boron nitride nanowalls: low-temperature plasma-enhanced chemical vapor deposition synthesis and optical properties

    Science.gov (United States)

    Merenkov, Ivan S.; Kosinova, Marina L.; Maximovskii, Eugene A.

    2017-05-01

    Hexagonal boron nitride (h-BN) nanowalls (BNNWs) were synthesized by plasma-enhanced chemical vapor deposition (PECVD) from a borazine (B3N3H6) and ammonia (NH3) gas mixture at a low temperature range of 400 °C-600 °C on GaAs(100) substrates. The effect of the synthesis temperature on the structure and surface morphology of h-BN films was investigated. The length and thickness of the h-BN nanowalls were in the ranges of 50-200 nm and 15-30 nm, respectively. Transmission electron microscope images showed the obtained BNNWs were composed of layered non-equiaxed h-BN nanocrystallites 5-10 nm in size. The parallel-aligned h-BN layers as an interfacial layer were observed between the film and GaAs(100) substrate. BNNWs demonstrate strong blue light emission, high transparency (>90%) both in visible and infrared spectral regions and are promising for optical applications. The present results enable a convenient growth of BNNWs at low temperatures.

  17. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  18. Influence of purge, time of waiting and TiCl4 dosing time in a low-pressure atomic layer deposition (ALD reactor on properties of TiO2 layer

    Directory of Open Access Journals (Sweden)

    W. Walke

    2017-01-01

    Full Text Available The aim of the study was to evaluate the influence of the ALD process parameters on mechanical properties and corrosion resistance of TiO2 layer. The TiO2 layer was deposited on stainless steel surfaces at constant temperature T = 200 °C and number of cycles nc = 500 (g ≈ 25 nm. The applied methodology consisted of potentiodynamic and impedance studies, as well as adhesion test. The obtained results were the basis for selection of surface treatment method for stainless steel implants for contact with blood. Appropriate parameters of surface treatment realized by means of the ALD method is of significant importance. It will contribute to the development of technological conditions of specified deposition parameters of TiO2 layers on steel implants.

  19. Interface evolution of TiAl/Ti6242 transient liquid phase joint using Ti, Cu foils as insert metals

    Institute of Scientific and Technical Information of China (English)

    DUAN Hui-ping; K. H. Bohm; V. Ventzke; M. Kocak

    2005-01-01

    The interface evolution of TiAl/Ti6242 joint produced by transient liquid phase(TLP) bonding with Ti,Cu foils as insert metals was investigated. The results show that the surface oxide layer on TiAl plays a very imporer on the surface of TiAl. The diffusion behavior of Cu atoms in TiAl is strongly controlled by the vacancies beneath the surface of TiAl. Based on the interface diffusion and interface wettability, a mechanism for the effect of bonding pressure, bonding temperature, holding time and stacking sequence of the insert foils on the joint formation process were proposed.

  20. Magnetism, spin texture and in-gap states. Atomic specialization at the surface of oxygen-deficient SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Jeschke, Harald O.; Altmeyer, Michaela; Valenti, Roser [Institut fuer Theoretische Physik, Goethe-Universitaet Frankfurt, Max-von-Laue-Strasse 1, 60438 Frankfurt am Main (Germany); Rozenberg, Marcelo; Gabay, Marc [Laboratoire de Physique des Solides, Bat 510, Universite Paris-Sud, 91405 Orsay (France)

    2016-07-01

    We investigate the electronic structure and spin texture at the (001) surface of SrTiO{sub 3} in the presence of oxygen vacancies by means of ab initio density functional theory (DFT) calculations of slabs. Relativistic non-magnetic DFT calculations exhibit Rashba-like spin winding with a characteristic energy scale ∝ 10 meV. However, when surface magnetism on the Ti ions is included, bands become spin-split with an energy difference ∝ 100 meV at the Γ point. This energy scale is comparable to the observations in SARPES experiments performed on the two-dimensional electronic states confined near the (001) surface of SrTiO{sub 3}. We find the spin polarized state to be the ground state of the system, and while magnetism tends to suppress the effects of the relativistic Rashba interaction, signatures of it are still clearly visible in terms of complex spin textures.

  1. Characterization of Plasma Enhanced Chemical Vapor Deposition-Physical Vapor Deposition transparent deposits on textiles to trigger various antimicrobial properties to food industry textiles

    Energy Technology Data Exchange (ETDEWEB)

    Brunon, Celine [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France); Chadeau, Elise; Oulahal, Nadia [Universite de Lyon, Universite Lyon 1, Laboratoire de Recherche en Genie Industriel Alimentaire (LRGIA, E.A. 3733), Rue Henri de Boissieu, F-01000 Bourg en Bresse (France); Grossiord, Carol [Science et Surface, 64, Chemin des Mouilles, F-69130 Ecully (France); Dubost, Laurent [HEF, ZI SUD, Rue Benoit Fourneyron, F-42166 Andrezieux Boutheon (France); Bessueille, Francois [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France); Simon, Farida [TDV Industrie, 43 Rue du Bas des Bois, BP 121, F-53012 Laval Cedex (France); Degraeve, Pascal [Universite de Lyon, Universite Lyon 1, Laboratoire de Recherche en Genie Industriel Alimentaire (LRGIA, E.A. 3733), Rue Henri de Boissieu, F-01000 Bourg en Bresse (France); Leonard, Didier, E-mail: didier.leonard@univ-lyon1.fr [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France)

    2011-07-01

    Textiles for the food industry were treated with an original deposition technique based on a combination of Plasma Enhanced Chemical Vapor Deposition and Physical Vapor Deposition to obtain nanometer size silver clusters incorporated into a SiOCH matrix. The optimization of plasma deposition parameters (gas mixture, pressure, and power) was focused on textile transparency and antimicrobial properties and was based on the study of both surface and depth composition (X-ray Photoelectron Spectroscopy (XPS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), as well as Transmission Electron Microscopy, Atomic Force Microscopy, SIMS depth profiling and XPS depth profiling on treated glass slides). Deposition conditions were identified in order to obtain a variable and controlled quantity of {approx} 10 nm size silver particles at the surface and inside of coatings exhibiting acceptable transparency properties. Microbiological characterization indicated that the surface variable silver content as calculated from XPS and ToF-SIMS data directly influences the level of antimicrobial activity.

  2. Synthesis of graphene by cobalt-catalyzed decomposition of methane in plasma-enhanced CVD: Optimization of experimental parameters with Taguchi method

    Science.gov (United States)

    Mehedi, H.-A.; Baudrillart, B.; Alloyeau, D.; Mouhoub, O.; Ricolleau, C.; Pham, V. D.; Chacon, C.; Gicquel, A.; Lagoute, J.; Farhat, S.

    2016-08-01

    This article describes the significant roles of process parameters in the deposition of graphene films via cobalt-catalyzed decomposition of methane diluted in hydrogen using plasma-enhanced chemical vapor deposition (PECVD). The influence of growth temperature (700-850 °C), molar concentration of methane (2%-20%), growth time (30-90 s), and microwave power (300-400 W) on graphene thickness and defect density is investigated using Taguchi method which enables reaching the optimal parameter settings by performing reduced number of experiments. Growth temperature is found to be the most influential parameter in minimizing the number of graphene layers, whereas microwave power has the second largest effect on crystalline quality and minor role on thickness of graphene films. The structural properties of PECVD graphene obtained with optimized synthesis conditions are investigated with Raman spectroscopy and corroborated with atomic-scale characterization performed by high-resolution transmission electron microscopy and scanning tunneling microscopy, which reveals formation of continuous film consisting of 2-7 high quality graphene layers.

  3. Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

    Science.gov (United States)

    Hu, Wen-Juan; Xie, Fen-Yan; Chen, Qiang; Weng, Jing

    2008-10-01

    We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C-O-C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C-O-C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films.

  4. Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

    Institute of Scientific and Technical Information of China (English)

    HU Wen-Juan; XIE Fen-Yan; CHEN Qiang; WENG Jing

    2008-01-01

    We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C-O-C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C-O-C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films.

  5. Plasma enhanced chemical vapor deposition of Cr{sub 2}O{sub 3} thin films using chromium hexacarbonyl (Cr(CO){sub 6}) precursor

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jinwen [Center for Materials for Information Technology and Department of Chemical and Biological Engineering, University of Alabama, Tuscaloosa, AL 35487 (United States)], E-mail: wang006@bama.ua.edu; Gupta, Arunava; Klein, Tonya M. [Center for Materials for Information Technology and Department of Chemical and Biological Engineering, University of Alabama, Tuscaloosa, AL 35487 (United States)

    2008-09-01

    Chromium oxide (Cr{sub 2}O{sub 3}) thin films have been deposited by plasma enhanced chemical vapor deposition on c-cut sapphire (Al{sub 2}O{sub 3}) and oxidized silicon substrates at temperatures between 250 and 400 deg. C using the precursor chromium hexacarbonyl (Cr(CO){sub 6}). The film growth rate ranges between 5 and 14 A/min, with the growth rate going through a maximum at 300 deg. C before decreasing at higher temperature, suggesting the presence of competing deposition and desorption reaction channels. Scanning electron microscope images indicate that the density of grains and film crystallinity increases with increasing substrate temperatures, while atomic force microscopy shows an overall decrease in film roughness with increasing temperature. Normal {theta} - 2{theta} Bragg X-ray diffraction results show that films deposited on SiO{sub 2} are polycrystalline, while those on sapphire have a preferred (0 0 0 l) orientation. The epitaxial nature of the film growth on Al{sub 2}O{sub 3} has been confirmed from the symmetry of off-axis X-ray scans.

  6. A Difference in Using Atomic Layer Deposition or Physical Vapour Deposition TiN as Electrode Material in Metal-Insulator-Metal and Metal-Insulator-Silicon Capacitors

    NARCIS (Netherlands)

    Groenland, A.W.; Wolters, R.A.M.; Kovalgin, A.Y.; Schmitz, J.

    2011-01-01

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the M

  7. Nonthermal atmospheric pressure plasma enhances mouse limb bud survival, growth, and elongation.

    Science.gov (United States)

    Chernets, Natalie; Zhang, Jun; Steinbeck, Marla J; Kurpad, Deepa S; Koyama, Eiki; Friedman, Gary; Freeman, Theresa A

    2015-01-01

    The enhanced differentiation of mesenchymal cells into chondrocytes or osteoblasts is of paramount importance in tissue engineering and regenerative therapies. A newly emerging body of evidence demonstrates that appendage regeneration is dependent on reactive oxygen species (ROS) production and signaling. Thus, we hypothesized that mesenchymal cell stimulation by nonthermal (NT)-plasma, which produces and induces ROS, would (1) promote skeletal cell differentiation and (2) limb autopod development. Stimulation with a single treatment of NT-plasma enhanced survival, growth, and elongation of mouse limb autopods in an in vitro organ culture system. Noticeable changes included enhanced development of digit length and definition of digit separation. These changes were coordinated with enhanced Wnt signaling in the distal apical epidermal ridge (AER) and presumptive joint regions. Autopod development continued to advance for approximately 144 h in culture, seemingly overcoming the negative culture environment usually observed in this in vitro system. Real-time quantitative polymerase chain reaction analysis confirmed the up-regulation of chondrogenic transcripts. Mechanistically, NT-plasma increased the number of ROS positive cells in the dorsal epithelium, mesenchyme, and the distal tip of each phalange behind the AER, determined using dihydrorhodamine. The importance of ROS production/signaling during development was further demonstrated by the stunting of digital outgrowth when anti-oxidants were applied. Results of this study show NT-plasma initiated and amplified ROS intracellular signaling to enhance development of the autopod. Parallels between development and regeneration suggest that the potential use of NT-plasma could extend to both tissue engineering and clinical applications to enhance fracture healing, trauma repair, and bone fusion.

  8. Plasma-enhanced synthesis of surfaces that kill bacteria on contact

    Science.gov (United States)

    Jampala, Soujanya Naga

    High incidences of microbial contamination and infections are a major concern in all existing and evolving technologies of medicine and biology. The propensity towards infections is directly related to bacterial colonization and biofilms on surfaces. This dissertation presents the development of surfaces that can kill bacteria on contact by using cold plasma technology. Quaternary ammonium (QA) groups are known to exhibit antibacterial characteristics in water-based environments. To overcome the limitations of residual toxicity, alternative strategies involving covalent attachment of QA groups to metallic and cellulosic surfaces have been developed. Low pressure, non-equilibrium plasma-enhanced functionalization and subsequent ex situ chemical reactions were designed for step-by-step "bottom-up" chemical synthesis of QA groups covalently anchored to surfaces. The plasma processes under selected discharge parameters generated structure- and functionality-controlled crosslinked networks of macromolecular layers with high concentrations of reactive amine groups. Subsequent derivatization of the plasma-deposited films with alkyl halides yielded surface-bound QA groups rendering surfaces with high bactericidal efficacy against Gram-positive Staphylococcus aureus and Gram-negative Klebsiella pneumoniae. Stainless steel and cotton surfaces sequentially treated with ethylene diamine plasma, n-hexyl bromide and methyl iodide exhibited at least 99.9% and 98% kill of S. aureus and K. pneumoniae respectively. The influence of chemical architecture of QA groups with different alkyl substituents on the efficacy of bactericidal surfaces was quantified. Results from this work will permit the development of novel plasma-aided technologies for the synthesis of antibacterial surfaces with potential biomedical applications. The cold plasma approach can be used on any solid material surfaces including polymers, metals, ceramics and semiconductors.

  9. Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Peralvarez, M; Carreras, Josep; Navarro-Urrios, D; Lebour, Y; Garrido, B [MIND, IN2UB, Department of Electronics, University of Barcelona, C/Marti i Franques 1, PL2, E-08028 Barcelona (Spain); Barreto, J; DomInguez, C [IMB-CNM, CSIC, Bellaterra, E-08193 Barcelona (Spain); Morales, A, E-mail: mperalvarez@el.ub.e [INAOE, Electronics Department, Apartado 51, Puebla 72000 (Mexico)

    2009-10-07

    An in-depth study of the physical and electrical properties of Si-nanocrystal-based MOSLEDs is presented. The active layers were fabricated with different concentrations of Si by both ion implantation and plasma-enhanced chemical vapour deposition. Devices fabricated by ion implantation exhibit a combination of direct current and field-effect luminescence under a bipolar pulsed excitation. The onset of the emission decreases with the Si excess from 6 to 3 V. The direct current emission is attributed to impact ionization and is associated with the reasonably high current levels observed in current-voltage measurements. This behaviour is in good agreement with transmission electron microscopy images that revealed a continuous and uniform Si nanocrystal distribution. The emission power efficiency is relatively low, {approx}10{sup -3}%, and the emission intensity exhibits fast degradation rates, as revealed from accelerated ageing experiments. Devices fabricated by chemical deposition only exhibit field-effect luminescence, whose onset decreases with the Si excess from 20 to 6 V. The absence of the continuous emission is explained by the observation of a 5 nm region free of nanocrystals, which strongly reduces the direct current through the gate. The main benefit of having this nanocrystal-free region is that tunnelling current flow assisted by nanocrystals is blocked by the SiO{sub 2} stack so that power consumption is strongly reduced, which in return increases the device power efficiency up to 0.1%. In addition, the accelerated ageing studies reveal a 50% degradation rate reduction as compared to implanted structures.

  10. Modelling and optimization of film thickness variation for plasma enhanced chemical vapour deposition processes

    Science.gov (United States)

    Waddell, Ewan; Gibson, Des; Lin, Li; Fu, Xiuhua

    2011-09-01

    This paper describes a method for modelling film thickness variation across the deposition area within plasma enhanced chemical vapour deposition (PECVD) processes. The model enables identification and optimization of film thickness uniformity sensitivities to electrode configuration, temperature, deposition system design and gas flow distribution. PECVD deposition utilizes a co-planar 300mm diameter electrodes with separate RF power matching to each electrode. The system has capability to adjust electrode separation and electrode temperature as parameters to optimize uniformity. Vacuum is achieved using dry pumping with real time control of butterfly valve position for active pressure control. Comparison between theory and experiment is provided for PECVD of diamond-like-carbon (DLC) deposition onto flat and curved substrate geometries. The process utilizes butane reactive feedstock with an argon carrier gas. Radiofrequency plasma is used. Deposited film thickness sensitivities to electrode geometry, plasma power density, pressure and gas flow distribution are demonstrated. Use of modelling to optimise film thickness uniformity is demonstrated. Results show DLC uniformity of 0.30% over a 200 mm flat zone diameter within overall electrode diameter of 300mm. Thickness uniformity of 0.75% is demonstrated over a 200mm diameter for a non-conformal substrate geometry. Use of the modelling method for PECVD using metal-organic chemical vapour deposition (MOCVD) feedstock is demonstrated, specifically for deposition of silica films using metal-organic tetraethoxy-silane. Excellent agreement between experimental and theory is demonstrated for conformal and non-conformal geometries. The model is used to explore scalability of PECVD processes and trade-off against film thickness uniformity. Application to MEMS, optical coatings and thin film photovoltaics is discussed.

  11. The Role of Plasma in Plasma Enhanced Chemical Vapour Deposition of Nanostructure Growth

    Science.gov (United States)

    Hash, David B.; Meyyappan, M.; Teo, Kenneth B. K.; Lacerda, Rodrigo G.; Rupesinghe, Nalin L.

    2004-01-01

    Chemical vapour deposition (CVD) has become the preferred process for high yield growth of carbon nanotubes and nanofibres because of its ability to pattern growth through lithographic positioning of transition metal catalysts on substrates. Many potential applications of nanotubes such as field emitters [1] require not only patterned growth but also vertical alignment. Some degree of ali,ment in thermal CVD processes can be obtained when carbon nanotubes are grown closely together as a result of van der Waals interactions. The ali,onment however is marginal, and the van der Waals prerequisite makes growth of freestanding nanofibres with thermal CVD unrealizable. The application of electric fields as a means of ali,onment has been shown to overcome this limitation [2-5], and highly aligned nanostructures can be grown if electric fields on the order of 0.5 V/microns are employed. Plasma enhanced CVD in various configurations including dc, rf, microwave, inductive and electron cyclotron resonance has been pursued as a means of enabling alignment in the CVD process. However, the sheath fields for the non-dc sources are in general not sufficient for a high degree of ali,pment and an additional dc bias is usually applied to the growth substrate. This begs the question as to the actual role of the plasma. It is clear that the plasma itself is not required for aligned growth as references [3] and [4] employed fields through small applied voltages (3-20 V) across very small electrode spacings (10-100 microns) and thus avoided striking a discharge.

  12. Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

    Science.gov (United States)

    Liu, A. Y.; Sun, C.; Markevich, V. P.; Peaker, A. R.; Murphy, J. D.; Macdonald, D.

    2016-11-01

    It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

  13. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bartlome, Richard, E-mail: richard.bartlome@alumni.ethz.ch; De Wolf, Stefaan; Demaurex, Bénédicte; Ballif, Christophe [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71b, 2000 Neuchâtel (Switzerland); Amanatides, Eleftherios; Mataras, Dimitrios [University of Patras, Department of Chemical Engineering, Plasma Technology Laboratory, P.O. Box 1407, 26504 Patras (Greece)

    2015-05-28

    We clarify the difference between the SiH{sub 4} consumption efficiency η and the SiH{sub 4} depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH{sub 4} consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH{sub 4} concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH{sub 4} concentration in the plasma c{sub p}, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH{sub 4} density measurements throughout the ignition and the termination of a plasma.

  14. The dynamics of TiN{sub x} (x = 1–3) admolecule interlayer and intralayer transport on TiN/TiN(001) islands

    Energy Technology Data Exchange (ETDEWEB)

    Edström, D., E-mail: daned@ifm.liu.se [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-58183 Linköping (Sweden); Sangiovanni, D.G.; Hultman, L. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-58183 Linköping (Sweden); Petrov, I.; Greene, J.E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-58183 Linköping (Sweden); Frederick Seitz Materials Research Laboratory and the Materials Science Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Chirita, V. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-58183 Linköping (Sweden)

    2015-08-31

    It has been shown both experimentally and by density functional theory calculations that the primary diffusing species during the epitaxial growth of TiN/TiN(001) are Ti and N adatoms together with TiN{sub x} complexes (x = 1, 2, 3), in which the dominant N-containing admolecule species depends upon the incident N/Ti flux ratio. Here, we employ classical molecular dynamics (CMD) simulations to probe the dynamics of TiN{sub x} (x = 1–3) admolecules on 8 × 8 atom square, single-atom-high TiN islands on TiN(001), as well as pathways for descent over island edges. The simulations are carried out at 1000 K, a reasonable epitaxial growth temperature. We find that despite their lower mobility on infinite TiN(001) terraces, both TiN and TiN{sub 2} admolecules funnel toward descending steps and are incorporated into island edges more rapidly than Ti adatoms. On islands, TiN diffuses primarily via concerted translations, but rotation is the preferred diffusion mechanism on infinite terraces. TiN{sub 2} migration is initiated primarily by rotation about one of the N admolecule atoms anchored at an epitaxial site. TiN admolecules descend from islands by direct hopping over edges and by edge exchange reactions, while TiN{sub 2} trimers descend exclusively by hopping. In contrast, TiN{sub 3} admolecules are essentially stationary and serve as initiators for local island growth. Ti adatoms are the fastest diffusing species on infinite TiN(001) terraces, but on small TiN/TiN(001) islands, TiN dimers provide more efficient mass transport. The overall results reveal the effect of the N/Ti precursor flux ratio on TiN(001) surface morphological evolution and growth modes. - Highlights: • Classical MD is used to model TiN{sub x} admolecule dynamics on TiN/TiN(001) islands. • TiN{sub x} admolecules descend from islands by both direct hopping and exchange reactions. • TiN and TiN{sub 2} exhibit surprisingly high diffusivities on TiN/TiN(001) islands. • TiN{sub 3} tetramers are

  15. Microhardness of structure units in the ternary Ti-rich Ti-Si-Al alloys

    Energy Technology Data Exchange (ETDEWEB)

    Bulanova, M.; Tretyachenko, L. [AN Ukrainskoj SSR, Kiev (Ukraine). Inst. Problem Materialovedeniya; Soroka, A.; Stakhov, D.

    1998-06-01

    The microhardness of the constituents (transformed {beta}-Ti, Z and eutectic ({beta} + Z)) was measured for Ti-rich Ti-Si-Al alloys. It depends both on the aluminium content in the alloy as well as on the character of mutual substitution of the atoms in the phases at the boundaries of the homogeneity ranges. The results are discussed on the basis of the Ti-rich part of the Ti-Si-Al phase diagram. (orig.) 2 refs.

  16. Metallo–organic compound-based plasma enhanced CVD of ZrO2 films for microelectronic applications

    Indian Academy of Sciences (India)

    S Chatterjee; S K Samanta; H D Banerjee; C K Maiti

    2001-12-01

    ZrO2 films on silicon wafer were deposited by microwave plasma enhanced chemical vapour deposition technique using zirconium tetratert butoxide (ZTB). The structure and composition of the deposited layers were studied by fourier transform infrared spectroscopy (FTIR). The deposition rates were also studied. MOS capacitors fabricated using deposited oxides were used to characterize the electrical properties of ZrO2 films. The films showed their suitability for microelectronic applications.

  17. Atomic structure of Zr{sub 41.2}Ti{sub 13.8}Cu{sub 12.5}Ni{sub 10}Be{sub 22.5} bulk metallic glass alloy

    Energy Technology Data Exchange (ETDEWEB)

    Hui, X. [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083 (China)], E-mail: huixd01@hotmail.com; Fang, H.Z.; Chen, G.L. [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083 (China); Shang, S.L.; Wang, Y. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Qin, J.Y. [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University - Southern Campus, Jinan 250061 (China); Liu, Z.K. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)

    2009-01-15

    Ab initio molecular dynamics (AIMD) calculations were performed on the atomic configuration of Zr{sub 41.2}Ti{sub 13.8}Cu{sub 12.5}Ni{sub 10}Be{sub 22.5} bulk metallic glass. The local structures were characterized in terms of structure factors (SF), pair correlation functions (PCF), coordinate numbers, bond pairs and Voronoi polyhedra. The glass transition temperature, generalized PCF and SF predicated by AIMD are in good agreement with the experimental data. Icosahedral short-range orders (ISRO) are found to be the most dominant, in view of the presence of the majority of bond pairs with 1551, 1541 and 1431, and Voronoi polyhedra with <0,3,6,1>, <0,2,8,1>, <0,0,12,0> and <0,2,8,4>. Icosahedral medium range orders (IMROs) are formed from icosahedra via the linkage of vertex-, edge-, face- and intercross-shared atoms. The glass structure on the nanometer scale is accumulated by polyhedra through an efficient packing mode. It is suggested that the extraordinary glass-forming ability of this alloy is essentially attributable to the formation of ISRO and IMRO, and the dense packing of atoms.

  18. The Development of a Ti-6Al-4V Alloy via Oxygen Solid Solution Strengthening for Aerospace and Defense Applications

    Science.gov (United States)

    2013-03-01

    hot extrusion . The content of TiO2 particles was 0 to ~1.5% of the mass mixture. Solidification of oxygen atoms (from TiO2 particles) into Ti...atom is soluted between Ti atoms and the lattice spreads out in the c-axis direction. ...........................3 Figure 4. Optical microstructures... extrusion ratios

  19. Atomic mixing of metallic bilayers Ni/Ti irradiated with high energy heavy ions; Etude du melange ionique de bicouches metalliques Ni/Ti irradiees avec des ions lourds de haute energie

    Energy Technology Data Exchange (ETDEWEB)

    Leguay, R.

    1994-09-26

    We have studied the ionic mixing of Nl(105 angstrom) bilayers irradiated, at 80 and 300 K. with GeV heavy ions. In this energy range, the energy transfer from the incident ions to the target occurs mainly through electronic excitations. We have shown that this energy transfer induces a strong ionic mixing at the Nl/Ti interface. The thickness of the mixed interlayer increases with the fluence. At low fluences (10{sup 12} ions/cm{sup 2}), the Nl/Ti interface is rough ; at higher fluences (10{sup 13} ions/cm{sup 2}) a homogeneous mixed interlayer appears ; and at even higher fluences (some 10{sup 13} ions/cm{sup 2}) a preferential diffusion of Ni into Ti is clearly seen. The characterization techniques used are: (1) electrical resistivity measurements which allow to follow in situ the damage kinetic. (II) neutron and X-ray reflectometry. (III) elaboration of transverse cuts on which was performed energy loss spectroscopy. (II) and (III) allow the determination of the concentration profiles of the different species present in the sample. (IV) transmission electron microscopy on the transverse cuts which gives a direct image of the different layers. (author). 11 refs., 103 figs., 23 tabs., 2 appends.

  20. The atomic structure and chemistry of Fe-rich steps on antiphase boundaries in Ti-doped Bi0.9Nd0.15FeO3

    Directory of Open Access Journals (Sweden)

    Ian MacLaren

    2014-06-01

    Full Text Available Stepped antiphase boundaries are frequently observed in Ti-doped Bi0.85Nd0.15FeO3, related to the novel planar antiphase boundaries reported recently. The atomic structure and chemistry of these steps are determined by a combination of high angle annular dark field and bright field scanning transmission electron microscopy imaging, together with electron energy loss spectroscopy. The core of these steps is found to consist of 4 edge-sharing FeO6 octahedra. The structure is confirmed by image simulations using a frozen phonon multislice approach. The steps are also found to be negatively charged and, like the planar boundaries studied previously, result in polarisation of the surrounding perovskite matrix.

  1. Atomic Resolution Interfacial Structure of Lead-free Ferroelectric K0.5Na0.5NbO3 Thin films Deposited on SrTiO3.

    Science.gov (United States)

    Li, Chao; Wang, Lingyan; Wang, Zhao; Yang, Yaodong; Ren, Wei; Yang, Guang

    2016-11-25

    Oxide interface engineering has attracted considerable attention since the discovery of its exotic properties induced by lattice strain, dislocation and composition change at the interface. In this paper, the atomic resolution structure and composition of the interface between the lead-free piezoelectric (K0.5Na0.5)NbO3 (KNN) thin films and single-crystalline SrTiO3 substrate were investigated by means of scanning transmission electron microscopy (STEM) combining with electron energy loss spectroscopy (EELS). A sharp epitaxial interface was observed to be a monolayer composed of Nb and Ti cations with a ratio of 3/1. The First-Principles Calculations indicated the interface monolayer showed different electronic structure and played the vital role in the asymmetric charge distribution of KNN thin films near the interface. We also observed the gradual relaxation process for the relatively large lattice strains near the KNN/STO interface, which remarks a good structure modulation behavior of KNN thin films via strain engineering.

  2. Atomic Resolution Interfacial Structure of Lead-free Ferroelectric K0.5Na0.5NbO3 Thin films Deposited on SrTiO3

    Science.gov (United States)

    Li, Chao; Wang, Lingyan; Wang, Zhao; Yang, Yaodong; Ren, Wei; Yang, Guang

    2016-11-01

    Oxide interface engineering has attracted considerable attention since the discovery of its exotic properties induced by lattice strain, dislocation and composition change at the interface. In this paper, the atomic resolution structure and composition of the interface between the lead-free piezoelectric (K0.5Na0.5)NbO3 (KNN) thin films and single-crystalline SrTiO3 substrate were investigated by means of scanning transmission electron microscopy (STEM) combining with electron energy loss spectroscopy (EELS). A sharp epitaxial interface was observed to be a monolayer composed of Nb and Ti cations with a ratio of 3/1. The First-Principles Calculations indicated the interface monolayer showed different electronic structure and played the vital role in the asymmetric charge distribution of KNN thin films near the interface. We also observed the gradual relaxation process for the relatively large lattice strains near the KNN/STO interface, which remarks a good structure modulation behavior of KNN thin films via strain engineering.

  3. Low-temperature multi-layer Al2 O3/TiO2 composite encapsulation thin film by atomic layer deposition%原子层沉积方法制备低温多层Al2 O3/TiO2复合封装薄膜的研究

    Institute of Scientific and Technical Information of China (English)

    周忠伟; 李民; 徐苗; 邹建华; 王磊; 彭俊彪

    2016-01-01

    Atomic layer deposition (ALD)is considered as one of the most promising thin-film encap-sulation technologies for flexible organic light-emitting diode (OLED)device because of high-quality films formed.In this work,different laminated structures of Al2 O3/TiO2 composite film were pre-pared at low temperature (80 ℃)by ALD method.The growth mechanism of Al2 O3 and TiO2 film was studied.The water vapor barrier properties of the different stacked structures of composite Al2 O3/TiO2 thin film were studied by the calcium film,which were analyzed by water vapor transmission rate (WVTR)test and contact angle measurements.The WVTR of the 5 nm/5 nm×8 dyads Al2 O3/TiO2 composite thin film was 2.1×10-5 g/m2/day and the OLED devices encapsulated by this optimized Al2 O3/TiO2 structure exhibited better lifetime characteristics in high temperature and high humidity test.%原子层沉积(ALD)方法可以制备出高质量薄膜,被认为是可应用于柔性有机电致发光器件(OLED)最有发展前景的薄膜封装技术之一.本文采用原子层沉积(ALD)技术,在低温(80℃)下,研究了 Al2 O3及TiO2薄膜的生长规律,通过钙膜水汽透过率(WVTR)、薄膜接触角测试等手段,研究了不同堆叠结构的多层 Al2 O3/TiO2复合封装薄膜的水汽阻隔特性,其中5 nm/5 nm×8 dyads(重复堆叠次数)的Al2 O3/TiO2叠层结构薄膜的WVTR达到2.1×10-5 g/m2/day.采用优化后的 Al2 O3/TiO2叠层结构薄膜对 OLED器件进行封装,实验发现封装后的 OLED 器件在高温高湿条件下展现了较好的寿命特性.

  4. Growth characteristics, optical properties, and crystallinity of thermal and plasma-enhanced ALD AIN films

    NARCIS (Netherlands)

    Van Bui, H.; Wiggers, F.B.; Aarnink, A.A.I.; Nguyen, M.D.; Jong, de M.P.; Kovalgin, A.Y.; Gupta, A.Y.

    2014-01-01

    Using real-time in-situ spectroscopic ellipsometry and ex-situ atomic force microscopy and X-ray diffraction, we have investigated the growth characteristics, especially ocusing on the initial growth (nucleation) regime, optical properties and crystalline structure of thin films of aluminum nitride

  5. Developments in plasma enhanced spatial ALD for high throughput applications [3.04

    NARCIS (Netherlands)

    Creyghton, Y.; Illiberi, A.; Mione, M.; Boekel, W. van; Debernardi, N.; Seitz, M.; Bruele, F. van den; Poodt, P.; Roozeboom,F.

    2016-01-01

    Atomic layer deposition by means of spatial separation of reactive gases is emerging as an industrial manufacturing technology. Integration of non-thermal plasma in spatial ALD machines will further expand the process window towards lower operation temperatures and specific materials requiring radic

  6. Periodic modeling of zeolite Ti-LTA

    Science.gov (United States)

    Hernandez-Tamargo, Carlos E.; Roldan, Alberto; Ngoepe, Phuti E.; de Leeuw, Nora H.

    2017-08-01

    We have proposed a combination of density functional theory calculations and interatomic potential-based simulations to study the structural, electronic, and mechanical properties of pure-silica zeolite Linde Type A (LTA), as well as two titanium-doped compositions. The energetics of the titanium distribution within the zeolite framework suggest that the inclusion of a second titanium atom with configurations Ti-(Si0)-Ti, Ti-(Si1)-Ti, and Ti-(Si2)-Ti is more energetically favorable than the mono-substitution. Infra-red spectra have been simulated for the pure-silica LTA, the single titanium substitution, and the configurations Ti-(Si0)-Ti and Ti-(Si2)-Ti, comparing against experimental benchmarks where available. The energetics of the direct dissociation of water on these Lewis acid sites indicate that this process is only favored when two titanium atoms form a two-membered ring (2MR) sharing two hydroxy groups, Ti-(OH2)-Ti, which suggests that the presence of water may tune the distribution of titanium atoms within the framework of zeolite LTA. The electronic analysis indicates charge transfer from H2O to the Lewis acid site and hybridization of their electronic states.

  7. Electrochromic Devices Deposited on Low-Temperature Plastics by Plasma-Enhanced Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Robbins, Joshua; Seman, Michael

    2005-09-20

    Electrochromic windows have been identified by the Basic energy Sciences Advisory committee as an important technology for the reduction of energy spent on heating and cooling in residential and commercial buildings. Electrochromic devices have the ability to reversibly alter their optical properties in response to a small electric field. By blocking ultraviolet and infrared radiation, while modulating the incoming visible radiation, electrochromics could reduce energy consumption by several Quads per year. This amounts to several percent of the total annual national energy expenditures. The purpose of this project was to demonstrate proof of concept for using plasma-enhanced chemical vapor deposition (PECVD) for depositing all five layers necessary for full electrochromic devices, as an alternative to sputtering techniques. The overall goal is to produce electrochromic devices on flexible polymer substrates using PECVD to significantly reduce the cost of the final product. We have successfully deposited all of the films necessary for a complete electrochromic devices using PECVD. The electrochromic layer, WO3, displayed excellent change in visible transmission with good switching times. The storage layer, V2O5, exhibited a high storage capacity and good clear state transmission. The electrolyte, Ta2O5, was shown to functional with good electrical resistivity to go along with the ability to transfer Li ions. There were issues with leakage over larger areas, which can be address with further process development. We developed a process to deposit ZnO:Ga with a sheet resistance of < 50 W/sq. with > 90% transmission. Although we were not able to deposit on polymers due to the temperatures required in combination with the inverted position of our substrates. Two types of full devices were produced. Devices with Ta2O5 were shown to be functional using small aluminum dots as the top contact. The polymer electrolyte devices were shown to have a clear state transmission of

  8. Atomic resolution of nitrogen-doped graphene on Cu foils

    Science.gov (United States)

    Wang, Chundong; Schouteden, Koen; Wu, Qi-Hui; Li, Zhe; Jiang, Jianjun; Van Haesendonck, Chris

    2016-09-01

    Atomic-level substitutional doping can significantly tune the electronic properties of graphene. Using low-temperature scanning tunneling microscopy and spectroscopy, the atomic-scale crystalline structure of graphene grown on polycrystalline Cu, the distribution of nitrogen dopants and their effect on the electronic properties of graphene were investigated. Both the graphene sheet growth and nitrogen doping were performed using microwave plasma-enhanced chemical vapor deposition. The results indicated that the nitrogen dopants preferentially sit at the grain boundaries of the graphene sheets and confirmed that plasma treatment is a potential method to incorporate foreign atoms into the graphene lattice to tailor the graphene’s electronic properties.

  9. Property improvement of multilayer TiN/Ti films with C~+ implantation

    Institute of Scientific and Technical Information of China (English)

    赵志勇; 张通和; 梁宏; 张荟星; 张孝吉

    1997-01-01

    Using the MEVVA ion source, carbon ions have been implanted in TiN coatings deposited by multi-arc ion plating The Vickers microhardness of the C+ -implanted TiN films increased with the increase in the ion flux and dose. X-ray diffraction (XRD) analysis showed that the TiC phases had been formed in the films. In addition, the films had the preferred growth orientations of TiN and TiC, both of which were (111) orientation after annealing at 500℃ for 30 min. Auger electron spectra analysis indicated that C+ -implanted profile was in typical Gaussian-like distribution in single films. The distribution with multipeaks of C atoms was obtained in multi-layer TiN/Ti. The possibility of the multilayer films (Ti (C, N)/TiN/Ti(C, N)/TiN and Ti(C, N)/TiC/Ti(C, N)/TiC) forming using the C-implanted TiN/Ti films is presented for the first time.

  10. The first-principles study of ferroelectric behaviours of PbTiO3/SrTiO3 and BaTiO3/SrTiO3 superlattices

    Institute of Scientific and Technical Information of China (English)

    Zhu Zhen-Ye; Wang Biao; Wang Hai; Zheng Yue; Li Qing-Kun

    2007-01-01

    We have performed the first-principles calculation to investigate the origins of ferroelectricities and different polarization behaviours of superlattices BaTiO3/SrTiO3 and PbTiO3/SrTiO3- The density of state (DOS) and electronic charge profiles show that there are strong hybridizations between atoms Ti and O and between atoms Pb and O which play very important roles in producing the ferroelectricities of superlattices BaTiO3/rTiO3 and PbTiO3/SrTiO3. Owing to the decline of internal electric field in SrTiO3 (ST) layer, the tetragonality and polarizations of superlattices decrease with increasing the fraction of SrTiO3 in the superlattices. We find that the polarization of PbTiO3/SrTiO3 is largerthan that of BaTiO3/SrTiO3 at the same ratio of components, because the polarization mismatch between PbTiO3 and SrTiO3 is larger than that between BaTiO3 and SrTiO3. The polarization and tetragonality are enhanced with respect to those of bulk tetragonal BaTiO3 in the superlattices BaTiO3/SrTiO3, while the polarization and tetragonality are reduced with respect to those of bulk tetragonal PbTiO3 in superlattices PbTiO3/SrTiO3.

  11. Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

    Energy Technology Data Exchange (ETDEWEB)

    Sulyaeva, Veronica S., E-mail: veronica@niic.nsc.ru [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A. [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, Valerii G. [Laboratory of Physical Principles for Integrated Microelectronics, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Kirienko, Viktor V. [Laboratory of Nonequilibrium Semiconductors Systems, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation)

    2014-05-02

    Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers (93%). • BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9.

  12. Determination of Fe_2O_3,TiO_2 and SiO_2 in bauxite by inductivelycoupled plasma-atomic emission spectrometry%ICP-AES法测定矾土中Fe2O3、TiO2和SiO2

    Institute of Scientific and Technical Information of China (English)

    郝荷芳; 苑利

    2011-01-01

    采用四硼酸锂熔融试样,电感耦合等离子体原子发射光谱法(ICP-AES法)测定矾土中Fe2 O3、TiO2和SiO2。通过对熔样方法选择、铝基体以及背景的研究,确定了分析条件。结果表明,该法具有良好的精密度和准确性,回收率在94%~108%。%A method based on inductively coupled plasma-atomic emission spectrometry(ICP-AES) was established for the determination of Fe2O3,TiO2 and SiO2 in bauxite.The sample was melted into lithium tetraborate.The analysis conditions were obtained by studying the melted methods,Al matrix and background.The recommended method showed satisfying precision and accuracy as well.The recovery percents detected by standard addition method were in range of 94%~108%.

  13. Comparative study of Ti and Ni clusters from first principles

    Energy Technology Data Exchange (ETDEWEB)

    Lee, B; Lee, G W

    2007-08-20

    Icosahedral clusters in Ti and Ni are studied with first-principles density functional calculations. We find significant distortion on the Ti icosahedron caused by the strong interaction between surface atoms on the icosahedron but not between the center atom and surface atoms, whereas no such distortion is observed on Ni clusters. In addition, distortion becomes more severe when atoms are added to the Ti13 cluster resulting in short bonds. Such distorted icosahedra having short bonds are essentially to explain the structure factor of Ti liquid obtained in experiment.

  14. Effect of vertically oriented few-layer graphene on the wettability and interfacial reactions of the AgCuTi-SiO2f/SiO2 system.

    Science.gov (United States)

    Sun, Z; Zhang, L X; Qi, J L; Zhang, Z H; Hao, T D; Feng, J C

    2017-03-22

    With the aim of expanding their applications, particularly when joining metals, a simple but effective method is reported whereby the surface chemical reactivity of SiO2f/SiO2 (SiO2f/SiO2 stands for silica fibre reinforced silica based composite materials and f is short for fibre) composites with vertically oriented few-layer graphene (VFG, 3-10 atomic layers of graphene vertically oriented to the substrate) can be tailored. VFG was uniformly grown on the surface of a SiO2f/SiO2 composite by using plasma enhanced chemical vapour deposition (PECVD). The wetting experiments were conducted by placing small pieces of AgCuTi alloy foil on SiO2f/SiO2 composites with and without VFG decoration. It was demonstrated that the contact angle dropped from 120° (without VFG decoration) to 50° (with VFG decoration) when the holding time was 10 min. The interfacial reaction layer in SiO2f/SiO2 composites with VFG decoration became continuous without any unfilled gaps compared with the composites without VFG decoration. High-resolution transmission electron microscopy (HRTEM) was employed to investigate the interaction between VFG and Ti from the AgCuTi alloy. The results showed that VFG possessed high chemical reactivity and could easily react with Ti even at room temperature. Finally, a mechanism of how VFG promoted the wetting of the SiO2f/SiO2 composite by the AgCuTi alloy is proposed and thoroughly discussed.

  15. Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode

    Science.gov (United States)

    Chiappim, W.; Testoni, G. E.; Doria, A. C. O. C.; Pessoa, R. S.; Fraga, M. A.; Galvão, N. K. A. M.; Grigorov, K. G.; Vieira, L.; Maciel, H. S.

    2016-07-01

    Titanium dioxide (TiO2) thin films have generated considerable interest over recent years, because they are functional materials suitable for a wide range of applications. The efficient use of the outstanding functional properties of these films relies strongly on their basic characteristics, such as structure and morphology, which are affected by deposition parameters. Here, we report on the influence of plasma power and precursor chemistry on the growth kinetics, structure and morphology of TiO2 thin films grown on Si(100) by plasma-enhanced atomic layer deposition (PEALD). For this, remote capacitively coupled 13.56 MHz oxygen plasma was used to act as a co-reactant during the ALD process using two different metal precursors: titanium tetrachloride (TiCl4) and titanium tetraisopropoxide (TTIP). Furthermore, we investigate the effect of direct plasma exposure during the co-reactant pulse on the aforementioned material properties. The extensive characterization of TiO2 films using Rutherford backscattering spectroscopy, ellipsometry, x-ray diffraction (XRD), field-emission scanning electron microscopy, and atomic force microscopy (AFM) have revealed how the investigated process parameters affect their growth per cycle (GPC), crystallization and morphology. The GPC tends to increase with plasma power for both precursors, however, for the TTIP precursor, it starts decreasing when the plasma power is greater than 100 W. From XRD analysis, we found a good correlation between film crystallinity and GPC behavior, mainly for the TTIP process. The AFM images indicated the formation of films with grain size higher than film thickness (grain size/film thickness ratio ≈20) for both precursors, and plasma power analysis allows us to infer that this phenomenon can be directly related to the increase of the flux of energetic oxygen species on the substrate/growing film surface. Finally, the effect of direct plasma exposure on film structure and morphology was evidenced

  16. Structural inheritance and difference between Ti2AlC, Ti3AlC2 and Ti5Al2C3 under pressure from first principles

    Science.gov (United States)

    Gao, Qing-He; Du, An; Yang, Ze-Jin

    2017-01-01

    The structural inheritance and difference between Ti2AlC, Ti3AlC2 and Ti5Al2C3 under pressure from first principles are studied. The results indicate that the lattice parameter a are almost the same within Ti2AlC, Ti3AlC2 and Ti5Al2C3, and the value of c in Ti5Al2C3 is the sum of Ti2AlC and Ti3AlC2 which is revealed by the covalently bonded chain in the electron density difference: Al-Ti-C-Ti-Al for Ti2AlC, Al-Ti2-C-Ti1-C-Ti2-Al for Ti3AlC2 and Al-Ti3-C2-Ti3-Al-Ti2-C1-Ti1-C1-Ti2-Al for Ti5Al2C3. The calculated axial compressibilities, volumetric shrinkage, elastic constant c11, c33/c11 ratio, bulk modulus, shear modulus, and Young’s modulus of Ti5Al2C3 are within the range of the end members (Ti2AlC and Ti3AlC2) in a wide pressure range of 0-100 GPa. Only Ti2AlC is isotropic crystal at about 50 GPa within the Ti-Al-C compounds. All of the Ti 3d density of states curves of the three compounds move from lower energy to higher energy level with pressure increasing. The similarities of respective bond length, bond overlap population (Ti-C, Ti-Al and Ti-Ti), atom Mulliken charges under pressure as well as the electron density difference for the three compounds are discovered. Among the Ti-Al-C ternary compounds, Ti-Ti bond behaves least compressibility, whereas the Ti-Al bond is softer than that of Ti-C bonds, which can also been confirmed by the density of states and electron density difference. Bond overlap populations of Ti-Ti, Ti-C and Ti-Al indicate that the ionicity interaction becomes more and more stronger in the three structures as the pressure increasing. Mulliken charges of Ti1, Ti2, Ti3, C and Al are 0.65, 0.42, 0.39, ‑0.73, ‑0.04 at 0 GPa, respectively, which are consistent with the Pauling scale.

  17. Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

    Science.gov (United States)

    Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

    2016-06-01

    Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

  18. Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors

    Science.gov (United States)

    Choi, S. W.; Lucovsky, G.; Bachmann, K. J.

    1992-01-01

    Thin homoepitaxial films of gallium phosphide (GaP) have been grown by remote plasma enhanced chemical vapor deposition utilizing in situ-generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (RF) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate; however, the saturation of the growth rate at even higher RF power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.

  19. Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors

    Science.gov (United States)

    Choi, S. W.; Lucovsky, G.; Bachmann, Klaus J.

    1993-01-01

    Thin homoepitaxial films of gallium phosphide (GaP) were grown by remote plasma enhanced chemical vapor deposition utilizing in situ generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (rf) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate, however, the saturation of the growth rate at even higher rf power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.

  20. Highly efficient shrinkage of inverted-pyramid silicon nanopores by plasma-enhanced chemical vapor deposition technology

    Science.gov (United States)

    Wang, Yifan; Deng, Tao; Chen, Qi; Liang, Feng; Liu, Zewen

    2016-06-01

    Solid-state nanopore-based analysis systems are currently one of the most attractive and promising platforms in sensing fields. This work presents a highly efficient method to shrink inverted-pyramid silicon nanopores using plasma-enhanced chemical vapor deposition (PECVD) technology by the deposition of SiN x onto the surface of the nanopore. The contraction of the inverted-pyramid silicon nanopores when subjected to the PECVD process has been modeled and carefully analyzed, and the modeling data are in good agreement with the experimental results within a specific PECVD shrinkage period (˜0-600 s). Silicon nanopores within a 50-400 nm size range contract to sub-10 nm dimensions. Additionally, the inner structure of the nanopores after the PECVD process has been analyzed by focused ion beam cutting process. The results show an inner structure morphology change from inverted-pyramid to hourglass, which may enhance the spatial resolution of sensing devices.

  1. Microstructural modification of nc-Si/SiO{sub x} films during plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, X.W. [State Key Laboratory of Silicon Materials Science, Zhejiang University, Hangzhou 310027 (China)

    2005-07-01

    Nanocrystalline-silicon embedded silicon oxide films are prepared by plasma-enhanced chemical vapor deposition (PECVD) at 300 C without post-heat treatment. Measurements of XPS, IR, XRD, and HREM are performed. Microstructural modifications are found occurring throughout the film deposition. The silica network with a high oxide state is suggested to be formed directly under the abduction of the former deposited layer, rather than processing repeatedly from the original low-oxide state of silica. Nanocrystalline silicon particles with a size of 6-10 nm are embedded in the SiO{sub x} film matrix, indicating the potential application in Si-based optoelectronic integrity. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Room temperature radio-frequency plasma-enhanced pulsed laser deposition of ZnO thin films

    Science.gov (United States)

    Huang, S.-H.; Chou, Y.-C.; Chou, C.-M.; Hsiao, V. K. S.

    2013-02-01

    In this study, we compared the crystalline structures, optical properties, and surface morphologies of ZnO thin films deposited on silicon and glass substrates by conventional pulsed laser deposition (PLD) and radio-frequency (RF) plasma-enhanced PLD (RF-PEPLD). The depositions were performed at room temperature under 30-100 mTorr pressure conditions. The RF-PEPLD process was found to have deposited a ZnO structure with preferred (0 0 2) c-axis orientation at a higher deposition rate; however, the RF-PEPLD process generated more defects in the thin films. The application of oxygen pressure to the RF-PEPLD process reduced defects effectively and also increased the deposition rate.

  3. Highly efficient shrinkage of inverted-pyramid silicon nanopores by plasma-enhanced chemical vapor deposition technology.

    Science.gov (United States)

    Wang, Yifan; Deng, Tao; Chen, Qi; Liang, Feng; Liu, Zewen

    2016-06-24

    Solid-state nanopore-based analysis systems are currently one of the most attractive and promising platforms in sensing fields. This work presents a highly efficient method to shrink inverted-pyramid silicon nanopores using plasma-enhanced chemical vapor deposition (PECVD) technology by the deposition of SiN x onto the surface of the nanopore. The contraction of the inverted-pyramid silicon nanopores when subjected to the PECVD process has been modeled and carefully analyzed, and the modeling data are in good agreement with the experimental results within a specific PECVD shrinkage period (∼0-600 s). Silicon nanopores within a 50-400 nm size range contract to sub-10 nm dimensions. Additionally, the inner structure of the nanopores after the PECVD process has been analyzed by focused ion beam cutting process. The results show an inner structure morphology change from inverted-pyramid to hourglass, which may enhance the spatial resolution of sensing devices.

  4. Room-Temperature Ferromagnetic ZnMnO Thin Films Synthesized by Plasma Enhanced Chemical Vapour Deposition Method

    Institute of Scientific and Technical Information of China (English)

    LIN Ying-Bin; ZHANG Feng-Ming; DU You-Wei; HUANG Zhi-Gao; ZHENG Jian-Guo; LU Zhi-Hai; ZOU Wen-Qin; LU Zhong-Lin; XU Jian-Ping; JI Jian-Ti; LIU Xing-Chong; WANG Jian-Feng; LV Li-Ya

    2007-01-01

    Room-temperature ferromagnetic Mn-doped ZnO films are grown on Si (001) substrates by plasma enhanced chemical vapour deposition (PECVD). X-ray diffraction measurements reveal that the Zn1-xMnxO films have the single-phase wurtzite structure. X-ray photoelectron spectroscopy indicates the existence of Mn2+ ions in Mndoped ZnO films. Furthermore, the decreasing additional Raman peak with increasing Mn-doping is considered to relate to the substitution of Mn ions for the Zn ions in ZnO lattice. Superconducting quantum interference device (SQUID) measurements demonstrate that Mn-doped ZnO films have ferromagnetic behaviour at room temperature.

  5. High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by high- pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality μc-Si:H films have been achieved with a high deposition rate of 7.8 /s at a high pressure. The Voc of 560 mV and the FF of 0.70 have been achieved for a single-junction μc-Si:H p-i-n solar cell at a deposition rate of 7.8 /s.

  6. Zirconia coatings deposited by novel plasma-enhanced aerosol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Miszczak, Sebastian; Pietrzyk, Bozena; Kucharski, Daniel [Institute of Materials Science and Engineering, Lodz University of Technology (Poland)

    2016-05-15

    The sol-gel technique is well known and widely used for manufacturing coatings. An aerosol-gel method is a modification of the classic sol-gel process. Preparation of coatings by this technique involves the formation of an aerosol and its deposition on the coated surfaces, where the aerosol droplets merge into a continuous layer. In this work, an aerosol-gel routine, enhanced with a low-temperature plasma discharge, was used to produce zirconia coatings on different substrates. Low-temperature plasma was used for preactivation of substrate surfaces prior to the sol deposition, and for treatment of deposited layers. The obtained coatings were characterized using optical, electron (SEM), and atomic force (AFM) microscopes, a contact-angle device, a scratch tester, a grazing-incidence X-ray diffractometer (GIXRD), and an infrared spectrometer (FTIR). The results showed a significant influence of substrate plasma pretreatment on the formation and morphology of zirconia thin films. A noticeable effect of low-temperature plasma treatment on the structure and properties of the obtained coatings was also presented. These results allow possible applications of this method for the preparation of zirconia coatings on temperature-sensitive substrates to be predicted. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Out-diffused silver island films for surface-enhanced Raman scattering protected with TiO2 films using atomic layer deposition

    Science.gov (United States)

    2014-01-01

    We fabricated self-assembled silver nanoisland films using a recently developed technique based on out-diffusion of silver from an ion-exchanged glass substrate in reducing atmosphere. We demonstrate that the position of the surface plasmon resonance of the films depends on the conditions of the film growth. The resonance can be gradually shifted up to 100 nm towards longer wavelengths by using atomic layer deposition of titania, from 3 to 100 nm in thickness, upon the film. Examination of the nanoisland films in surface-enhanced Raman spectrometry showed that, in spite of a drop of the surface-enhanced Raman spectroscopy (SERS) signal after the titania spacer deposition, the Raman signal can be observed with spacers up to 7 nm in thickness. Denser nanoisland films show slower decay of the SERS signal with the increase in spacer thickness. PACS 78.67.Sc (nanoaggregates; nanocomposites); 81.16.Dn (self-assembly); 74.25.nd (Raman and optical spectroscopy) PMID:25170333

  8. An electrostatic ion pump with nanostructured Si field emission electron source and Ti particle collectors for supporting an ultra-high vacuum in miniaturized atom interferometry systems

    Science.gov (United States)

    Basu, Anirban; Velásquez-García, Luis F.

    2016-12-01

    We report a field emission-based, magnetic-less ion pump architecture for helping maintain a high vacuum within a small chamber that is compatible with miniaturized cold-atom interferometry systems. A nanostructured silicon field emitter array, with each nano-sharp tip surrounded by a self-aligned proximal gate electrode, is used to generate a surplus of electrons that cause impact ionization of gas molecules. A two-stage cylindrical electron collector, made of titanium, is used to increase the travel distance of the electrons, augmenting the ionization probability; gas ionization is subsequently followed by gettering of the ions by a negatively charged, annular-shaped titanium electrode. A proof-of-concept pump prototype was characterized using a 25 cm3 stainless steel vacuum chamber backed up by an external turbomolecular pump, a diaphragm pump, and a standard ion pump. Pumping action was observed with the electrostatic pump operating alone after an initial rapid rise of the chamber pressure due to electron/ion scrubbing. In addition, running the electrostatic pump in combination with the standard ion pump results in a lower vacuum level compared to the vacuum level produced by the standard ion pump acting alone. A proposed reduced-order model accurately predicts the functional dependence of the pressure versus time data and provides a good estimate of the characteristic pumping time constant inferred from the experiments.

  9. Interface energetics and atomic structure of epitaxial La1-xSrxCoO3 on Nb:SrTiO3

    Science.gov (United States)

    Van Overmeere, Quentin; Baniecki, John D.; Yamazaki, Takashi; Ricinschi, Dan; Aso, Hiroyuki; Miyata, Yusuke; Yamada, Hiroaki; Fujimura, Norifumi; Kataoka, Yuji; Imanaka, Yoshihiko

    2015-06-01

    The energetics at oxide semiconductor/La1-xSrxCoO3 heterojunctions, including the respective alignment of the valence and conduction bands, govern charge transfer and have to be determined for the design of future La1-xSrxCoO3-based devices. In this letter, the electronic and atomic structures of epitaxial La1-xSrxCoO3 on Nb-doped strontium titanate are revealed by scanning transmission electron microscopy, electron energy loss spectroscopy, and in situ x-ray and ultra violet photoelectron spectroscopies. For LaCoO3, a valence band (VB) offset of 2.8 ± 0.1 eV is deduced. The large offset is attributed to the orbital contributions of the Co 3d states to the VB maximum of the LaCoO3 thin films, with no evidence of interface dipole contributions. The sensitivity of the valence band orbital character to spin state ordering and oxygen vacancies is assessed using density functional theory.

  10. Plasma-enhanced deposition of antifouling layers on silicone rubber surfaces

    Science.gov (United States)

    Jiang, Hongquan

    In food processing and medical environments, biofilms serve as potential sources of contamination, and lead to food spoilage, transmission of diseases or infections. Because of its ubiquitous and recalcitrant nature, Listeria monocytogenes biofilm is especially hard to control. Generating antimicrobial surfaces provide a method to control the bacterial attachment. The difficulty of silver deposition on polymeric surfaces has been overcome by using a unique two-step plasma-mediated method. First silicone rubber surfaces were plasma-functionalized to generate aldehyde groups. Then thin silver layers were deposited onto the functionalized surfaces according to Tollen's reaction. X-ray photoelectron spectroscopy (XPS), atomic force spectroscopy (AFM) and scanning electron microscopy (SEM) showed that silver particles were deposited. By exposing the silver coated surfaces to L. monocytogenes, it was demonstrated that they were bactericidal to L. monocytogenes. No viable bacteria were detected after 12 to 18 h on silver-coated silicone rubber surfaces. Another antifouling approach is to generate polyethylene glycol (PEG) thin layer instead of silver on polymer surfaces. Covalent bond of PEG structures of various molecular weights to cold-plasma-functionalized polymer surfaces, such as silicone rubber, opens up a novel way for the generation of PEG brush-like or PEG branch-like anti-fouling layers. In this study, plasma-generated surface free radicals can react efficiently with dichlorosilane right after plasma treatment. With the generation of halo-silane groups, this enables PEG molecules to be grafted onto the modified surfaces. XPS data clearly demonstrated the presence of PEG molecules on plasma-functionalized silicone rubber surfaces. AFM images showed the changed surface morphologies as a result of covalent attachment to the surface of PEG molecules. Biofilm experiment results suggest that the PEG brush-like films have the potential ability to be the next

  11. Bonding charge density from atomic perturbations.

    Science.gov (United States)

    Wang, Yi; Wang, William Yi; Chen, Long-Qing; Liu, Zi-Kui

    2015-05-15

    Charge transfer among individual atoms is the key concept in modern electronic theory of chemical bonding. In this work, we present a first-principles approach to calculating the charge transfer. Based on the effects of perturbations of an individual atom or a group of atoms on the electron charge density, we determine unambiguously the amount of electron charge associated with a particular atom or a group of atoms. We computed the topological electron loss versus gain using ethylene, graphene, MgO, and SrTiO3 as examples. Our results verify the nature of chemical bonds in these materials at the atomic level.

  12. Positioning of the Precursor Gas Inlet in an Atmospheric Dielectric Barrier Reactor, and its Effect on the Quality of Deposited TiOx Thin Film Surface

    Directory of Open Access Journals (Sweden)

    Jan Píchal

    2013-01-01

    Full Text Available Thin film technology has become pervasive in many applications in recent years, but it remains difficult to select the best deposition technique. A further consideration is that, due to ecological demands, we are forced to search for environmentally benign methods. One such method might be the application of cold plasmas, and there has already been a rapid growth in studies of cold plasma techniques. Plasma technologies operating at atmospheric pressure have been attracting increasing attention. The easiest way to obtain low temperature plasma at atmospheric pressure seems to be through atmospheric dielectric barrier discharge (ADBD. We used the plasma enhanced chemical vapour deposition (PECVD method applying atmospheric dielectric barrier discharge (ADBD plasmafor TiOx thin films deposition, employing titanium isopropoxide (TTIP and oxygen as reactants, and argon as a working gas. ADBD was operated in filamentary mode. The films were deposited on glass. We studied the quality of the deposited TiOx thin film surface for various precursor gas inlet positions in the ADBD reactor. The best thin films quality was achieved when the precursor gases were brought close to the substrate surface directly through the inlet placed in one of the electrodes.High hydrophilicity of the samples was proved by contact angle tests (CA. The film morphology was tested by atomic force microscopy (AFM. The thickness of the thin films varied in the range of (80 ÷ 210 nm in dependence on the composition of the reactor atmosphere. XPS analyses indicate that composition of the films is more like the composition of TiOxCy.

  13. TiCl4 Barrier Process Engineering in Semiconductor Manufacturing

    Directory of Open Access Journals (Sweden)

    Tuung Luoh

    2016-01-01

    Full Text Available Titanium nitride (TiN not only was utilized in the wear-resistant coatings industry but it was also adopted in barrier processes for semiconductor manufacturing. Barrier processes include the titanium (Ti and TiN processes, which are commonly used as diffusion barriers in via/contact applications. However, engineers frequently struggle at the via/contact module in the beginning of every technology node. As devices shrink, barrier processes become more challenging to overcome the both the physical fill-in and electrical performance requirements of advanced small via/contact plugs. The aim of this paper is to investigate various chemical vapor deposition (CVD TiCl4-based barrier processes to serve the application of advanced small via/contact plugs and the metal gate processes. The results demonstrate that the plasma-enhanced chemical vapor deposition (PECVD TiCl4-based Ti process needs to select a feasible process temperature to avoid Si surface corrosion by high-temperature chloride flow. Conventional high step coverage (HSC CVD TiCl4-based TiN processes give much better impurity performance than metal organic chemical vapor deposition (MOCVD TiN. However, the higher chloride content in HSC film may degrade the long-term reliability of the device. Furthermore, it is evidenced that a sequential flow deposition (SFD CVD TiCl4-based process with multiple cycles can give much less chloride content, resulting in faster erase speeds and lower erase levels than that of conventional HSC TiN.

  14. Growth and characterization of nanodiamond layers prepared using the plasma-enhanced linear antennas microwave CVD system

    Energy Technology Data Exchange (ETDEWEB)

    Fendrych, Frantisek; Taylor, Andrew; Peksa, Ladislav; Kratochvilova, Irena; Kluiber, Zdenek; Fekete, Ladislav [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i, Na Slovance 2, CZ-18221 Prague 8 (Czech Republic); Vlcek, Jan [Department of Physics and Measurement, Institute of Chemical Technology Prague, Technicka 5, CZ-16628 Prague 6 (Czech Republic); Rezacova, Vladimira; Petrak, Vaclav [Faculty of Biomedical Engineering, Czech Technical University, Sitna 3105, CZ-27201 Kladno 2 (Czech Republic); Liehr, Michael [Leybold Optics Dresden GmbH, Zur Wetterwarte 50, D-01109 Dresden (Germany); Nesladek, Milos, E-mail: fendrych@fzu.c [IMOMEC division, IMEC, Institute for Materials Research, University Hasselt, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)

    2010-09-22

    Industrial applications of plasma-enhanced chemical vapour deposition (CVD) diamond grown on large area substrates, 3D shapes, at low substrate temperatures and on standard engineering substrate materials require novel plasma concepts. Based on the pioneering work of the group at AIST in Japan, the high-density coaxial delivery type of plasmas has been explored (Tsugawa et al 2006 New Diamond Front. Carbon Technol. 16 337-46). However, an important challenge is to obtain commercially interesting growth rates at very low substrate temperatures. In this work we introduce the concept of novel linear antenna sources, designed at Leybold Optics Dresden, using high-frequency pulsed MW discharge with a high plasma density. This type of pulse discharges leads to the preparation of nanocrystalline diamond (NCD) thin films, compared with ultra-NCD thin films prepared in (Tsugawa et al 2006 New Diamond Front. Carbon Technol. 16 337-46). We present optical emission spectroscopy data for the CH{sub 4}-CO{sub 2}-H{sub 2} gas chemistry and we discuss the basic properties of the NCD films grown.

  15. Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Zhang Hai-Long; Liu Feng-Zhen; Zhu Mei-Fang; Liu Jin-Long

    2012-01-01

    The influences of the plasma ignition condition in plasma enhanced chemical vapour deposition (PECVD) on the interfaces and the microstructures of hydrogenated microcrystalline Si (μc-Si:H) thin films are investigated.The plasma ignition condition is modified by varying the ratio of SiH4 to H2 (RH).For plasma ignited with a constant gas ratio,the time-resolved optical emission spectroscopy presents a low value of the emission intensity ratio of Hα to SiH(IHα/IsiH) at the initial stage,which leads to a thick amorphous incubation layer.For the ignition condition with a profiling RH,the higher IHα/IsiH values are realized.By optimizing the RH modulation,a uniform crystallinity along the growth direction and a denser μc-Si:H film can be obtained.However,an excessively high IHα/IsiH* may damage the interface properties,which is indicated by capacitance-voltage (C-V) measurements.Well controlling the ignition condition is critically important for the applications of Si thin films.

  16. Plasma-enhanced chemical vapor deposition of low- loss as-grown germanosilicate layers for optical waveguides

    Science.gov (United States)

    Ay, Feridun; Agan, Sedat; Aydinli, Atilla

    2004-08-01

    We report on systematic growth and characterization of low-loss germanosilicate layers for use in optical waveguides. Plasma enhanced chemical vapor deposition (PECVD) technique was used to grow the films using silane, germane and nitrous oxide as precursor gases. Chemical composition was monitored by Fourier transform infrared (FTIR) spectroscopy. N-H bond concentration of the films decreased from 0.43x1022 cm-3 down to below 0.06x1022 cm-3, by a factor of seven as the GeH4 flow rate increased from 0 to 70 sccm. A simultaneous decrease of O-H related bonds was also observed by a factor of 10 in the same germane flow range. The measured TE rate increased from 5 to 50 sccm, respectively. In contrast, the propagation loss values for TE polarization at λ=632.8 nm were found to increase from are 0.20 +/- 0.02 to 6.46 +/- 0.04 dB/cm as the germane flow rate increased from 5 to 50 sccm, respectively. In contrast, the propagation loss values for TE polarization at λ=1550 nm were found to decrease from 0.32 +/- 0.03 down to 0.14 +/- 0.06 dB/cm for the same samples leading to the lowest values reported so far in the literature, eliminating the need for high temperature annealing as is usually done for these materials to be used in waveguide devices.

  17. Deposition and characterization of diamond-like nanocomposite coatings grown by plasma enhanced chemical vapour deposition over different substrate materials

    Indian Academy of Sciences (India)

    Awadesh Kr Mallik; Nanadadulal Dandapat; Prajit Ghosh; Utpal Ganguly; Sukhendu Jana; Sayan Das; Kaustav Guha; Garfield Rebello; Samir Kumar Lahiri; Someswar Datta

    2013-04-01

    Diamond-like nanocomposite (DLN) coatings have been deposited over different substrates used for biomedical applications by plasma-enhanced chemical vapour deposition (PECVD). DLN has an interconnecting network of amorphous hydrogenated carbon and quartz-like oxygenated silicon. Raman spectroscopy, Fourier transform–infra red (FT–IR) spectroscopy, transmission electron microscopy (TEM) and X-ray diffraction (XRD) have been used for structural characterization. Typical DLN growth rate is about 1 m/h, measured by stylus profilometer. Due to the presence of quartz-like Si:O in the structure, it is found to have very good adhesive property with all the substrates. The adhesion strength found to be as high as 0.6 N on SS 316 L steel substrates by scratch testing method. The Young’s modulus and hardness have found to be 132 GPa and 14.4 GPa, respectively. DLN coatings have wear factor in the order of 1 × 10-7 mm3/N-m. This coating has found to be compatible with all important biomedical substrate materials and has successfully been deposited over Co–Cr alloy based knee implant of complex shape.

  18. Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Zhan, Hualin; Garrett, David J.; Apollo, Nicholas V.; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

    2016-01-01

    High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm3, were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail.

  19. Plasma-enhanced chemical vapor deposition of ortho-carborane: structural insights and interaction with Cu overlayers.

    Science.gov (United States)

    James, Robinson; Pasquale, Frank L; Kelber, Jeffry A

    2013-09-01

    X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) are used to investigate the chemical and electronic structure of boron carbide films deposited from ortho-carborane precursors using plasma-enhanced chemical vapor deposition (PECVD), and the reactivity of PECVD films toward sputter-deposited Cu overlayers. The XPS data provide clear evidence of enhanced ortho-carborane reactivity with the substrate, and of extra-icosahedral boron and carbon species; these results differ from results for films formed by condensation and electron beam induced cross-linking of ortho-carborane (EBIC films). The UPS data show that the valence band maximum for PECVD films is ∼1.5 eV closer to the Fermi level than for EBIC films. The XPS data also indicate that PECVD films are resistant to thermally-stimulated diffusion of Cu at temperatures up to 1000 K in UHV, in direct contrast to recently reported results, but important for applications in neutron detection and in microelectronics.

  20. Bamboo and herringbone shaped carbon nanotubes and carbon nanofibres synthesized in direct current-plasma enhanced chemical vapour deposition.

    Science.gov (United States)

    Zhang, Lu; Chen, Li; Wells, Torquil; El-Gomati, Mohamed

    2009-07-01

    Carbon nanotubes with different structures were catalytically synthesized on Ni coated SiO2/Si substrate in a Direct Current Plasma Enhanced Chemical Vapour Deposition system, in which C2H2 acted as the carbon source and NH3 as the etchant gas. A Scanning Electron Microscope study showed that carbon nanotubes were all vertically aligned with respect to the substrate, with diameters ranging from 10 nm to 200 nm. Different sizes of Ni catalyst particles were observed on the tips of carbon nanotubes. Transmission Electron Microscopy was used to study the morphology of the grown tubes and the results obtained show that the diameters and structures of these carbon nanotubes were closely correlated to the sizes and structures of the Ni nanoparticles. Two main structures namely bamboo shaped carbon nanotubes and herringbone shaped carbon nanofibres were found on the same sample. It is suggested that by controlling the pre-growth condition, desired structure of carbon nanotubes or carbon nanofibres could be produced for practical applications.

  1. Catalytic Carbon Submicron Fabrication Using Home-Built Very-High Frequency Plasma Enhanced Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Sukirno

    2008-09-01

    Full Text Available In this research, carbon nanotubes (CNT fabrication is attempted by using existing home-made Plasma Enhanced Chemical Vapour Deposition (PECVD system. The fabrication is a catalytic growth process, which Fe catalyst thin film is grown on the Silicon substrate by using dc-Unbalanced Magnetron Sputtering method. By using methane (CH4 as the source of carbon and diluted silane (SiH4 in hydrogen as the source of hydrogen with 10:1 ratio, CNT fabrications have been attempted by using Very High Frequency PECVD (VHF-PECVD method. The fabrication processes are done at relatively low temperature, 250oC, but with higher operated plasma frequency, 70 MHz. Recently, it is also been attempted a fabrication process with only single gas source, but using one of the modification of the VHF-PECVD system, which is by adding hot-wire component. The attempt was done in higher growth temperature, 400oC. Morphological characterizations, by using Scanning Electron Micrograph (SEM and Scanning Probe Microscopy (SPM, as well as the composition characterization, by using Energy Dispersion Analysis by X-Ray (EDAX, show convincing results that there are some signatures of CNT present.

  2. Plasma-enhanced chemical vapor deposition of low-loss SiON optical waveguides at 15-microm wavelength.

    Science.gov (United States)

    Bruno, F; Guidice, M D; Recca, R; Testa, F

    1991-11-01

    Good optical-quality SiON layers deposited upon a SiO(2) buffer layer placed upon silicon wafers have been obtained by using plasma-enhanced chemical vapor deposition from SiH(4), NH(3), and N(2)O. Optical planar waveguides with a thickness of 5 microm and a refractive index of 1.470 have been deposited and investigated in the wavelength region of 1.3-1.6 microm. Three absorption bands at 1.40, 1.48, and 1.54 microm have been detected and interpreted as Si-OH, N-H, and Si-H vibrational modes, respectively. Absorption losses of 3.8 dB/cm at 1.4 microm and 3.2 dB/cm at 1.51 microm have been measured. A mild annealing at approximately 800 degrees C completely removes the band at 1.40 microm, whereas strong reduction of absorption at 1.51 microm requires 3 h of annealing at 1100 degrees C. As a result, propagation losses of 0.36 to 0.54 dB/cm have been measured at 1.54-microm wavelength.

  3. Highly Uniform Wafer-scale Synthesis of α-MoOsub>3sub> by Plasma Enhanced Chemical Vapor Deposition.

    Science.gov (United States)

    Kim, HyeongU; Son, Juhyun; Kulkarni, Atul; Ahn, Chisung; Kim, Ki Seok; Shin, Dongjoo; Yeom, Geun; Kim, Taesung

    2017-03-20

    Molybdenum oxide (MoOsub>3sub>) has gained immense attention because of its high electron mobility, wide band gap, and excellent optical and catalytic properties. However, the synthesis of uniform and large-area MoOsub>3sub> is challenging. Here, we report the synthesis of wafer-scale α-MoO3 by plasma oxidation of Mo-deposited on Si/SiOsub>2sub>. Mo was oxidized by Osub>2sub> plasma in a plasma enhanced chemical vapor deposition (PECVD) system at 150 °C. Mo was oxidized by Osub>2sub> plasma in a PECVD system at 150 °C. It was found that the synthesized α-MoOsub>3sub> had a highly uniform crystalline structure. For the as-synthesized α-MoOsub>3sub> sensor, we observed a current change when the relative humidity was increased from 11% to 95%. The sensor was exposed to different humidity levels with fast recovery time of about 8 s. Hence this feasibility study shows that MoOsub>3sub> synthesized at low temperature can be utilized for the gas sensing applications by adopting flexible device technology.

  4. Plasma-enhanced Chemical Vapordeposition SiO2 Film after Ion Implantation Induces Quantum Well Intermixing

    Institute of Scientific and Technical Information of China (English)

    PENG Jucun; WU Boying; CHEN Jie; ZHAO Jie; WANG Yongchen

    2006-01-01

    A method of QWI ( quantum well intermixing) realizing through plasma-enhanced chemical vapordepositiom (PECVD) SiO2 film following ion implantation was investigated. PECVD 200 nm SiO2 film after 160 keV phosphorus(P) ion implantation was performed to induce InP-based multiple-quantum-well (MQW) laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N2 flue, the blue shift ofphotoluminescence (PL) peak related to implanted dose: 1 × 1011 , 1 × 1012, 1 × 1013 ,3 × 1013 , 7 × 1013 ion/ cm2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However , SiO2 film also may promote the quantum well intermixing.

  5. SiC-Si[sub 3]N[sub 4] composite coatings produced by plasma-enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gerretsen, J. (Centre for Technical Ceramics, Netherlands Organization for Applied Scientific Research, Eindhoven (Netherlands)); Kirchner, G. (Centre for Technical Ceramics, Netherlands Organization for Applied Scientific Research, Eindhoven (Netherlands)); Kelly, T. (Irish Science and Technology Agency, Dublin (Ireland)); Mernagh, V. (Irish Science and Technology Agency, Dublin (Ireland)); Koekoek, R. (Tempress, Hoogeveen (Netherlands)); McDonnell, L. (Tekscan Ltd., Cork (Ireland))

    1993-10-08

    Silicon carbonitride coatings have been produced by plasma-enhanced chemical vapour deposition (CVD) on AISI 440C steel in a hot-wall reactor at 250 C from a mixture of SiH[sub 4], N[sub 2]-NH[sub 3] and C[sub 2]H[sub 4], and analysed by electron probe microanalysis and Rutherford backscattering spectroscopy-elastic recoil detection. Coatings with different ratios of silicon carbide to silicon nitride and silicon suband superstoichiometries have been deposited. Stoichiometric coatings show a maximum in their mechanical properties. Depending on the SiC-to-Si[sub 3]N[sub 4] ratio, the Knoop hardness values vary between 1500 and 2800 HK[sub 0.025]. Internal stress is low at a level of 100-300 MPa. The pinhole density is less than 2 cm[sup -2]. The fracture toughness as determined from indention tests is 4 MPa m[sup 1/2]. Linear polarization testing results show excellent protection of the substrate material against chemically aggressive media as compared with conventional CVD. (orig.)

  6. Effect of Hydrogen Dilution on Growth of Silicon Nanocrystals Embedded in Silicon Nitride Thin Film bv Plasma-Enhanced CVD

    Institute of Scientific and Technical Information of China (English)

    DING Wenge; ZHEN Lanfang; ZHANG Jiangyong; LI Yachao; YU Wei; FU Guangsheng

    2007-01-01

    An investigation was conducted into the effect of hydrogen dilution on the mi-crostructure and optical properties of silicon nanograins embedded in silicon nitride (Si/SiNx) thin film deposited by the helicon wave plasma-enhanced chemical vapour deposition technique. With Ar-diluted SiH4 and N2 as the reactant gas sources in the fabrication of thin film, the film was formed at a high deposition rate. There was a high density of defect at the amorphous silicon (a-Si)/SiNx interface and a relative low optical gap in the film. An addition of hydrogen into the reactant gas reduced the film deposition rate sharply. The silicon nanograins in the SiNx matrix were in a crystalline state, and the density of defects at the silicon nanocrystals (nc-Si)/SiNx interface decreased significantly and the optical gap of the films widened. These results suggested that hydrogen activated by the plasma could not only eliminate in the defects between the interface of silicon nanograins and SiNx matrix, but also helped the nanograins transform from the amorphous into crystalline state. By changing the hydrogen dilution ratio in the reactant gas sources, a tunable band gap from 1.87 eV to 3.32 eV was obtained in the Si/SiNx film.

  7. Two-Phase (TiAl+TiCrAl) Coating Alloys for Titanium Aluminides

    Science.gov (United States)

    Brady, Michael P. (Inventor); Smialek, James L. (Inventor); Brindley, William J. (Inventor)

    1998-01-01

    A coating for protecting titanium aluminide alloys, including the TiAl gamma + Ti3Al (alpha(sub 2)) class, from oxidative attack and interstitial embrittlement at temperatures up to at least 1000 C. is disclosed. This protective coating consists essentially of titanium, aluminum. and chromium in the following approximate atomic ratio: Ti(41.5-34.5)Al(49-53)Cr(9.5-12.5)

  8. Characterization of microstructure and mechanical behavior of sputter deposited Ti-containing amorphous carbon coatings.

    Energy Technology Data Exchange (ETDEWEB)

    Feng, B.; Cao, D. M.; Meng, W. J.; Xu, J.; Tittsworth, R. C.; Rehn, L. E.; Baldo, P. M.; Doll, G. L.; Materials Science Division; Louisiana State Univ.; The Timken Company

    2001-12-03

    We report on the characterization of microstructure and mechanical properties of sputter deposited Ti-containing amorphous carbon (Ti-aC) coatings as a function of Ti composition. Ti-aC coatings have been deposited by unbalanced magnetron sputter deposition, in an industrial-scale four-target coating deposition system. The composition and microstructure of the Ti-aC coatings have been characterized in detail by combining the techniques of Rutherford backscattering spectrometry (RBS) and hydrogen elastic recoil detection (ERD), transmission electron microscopy (TEM), X-ray absorption near edge structure (XANES) spectroscopy and extended X-ray absorption fine structure (EXAFS) spectroscopy. At Ti compositions <4at.%, Ti atoms dissolve in an amorphous carbon (a-C) matrix. The dissolution limit of Ti atoms in an a-C matrix is determined to be between 4 and 8 at.%. At Ti compositions >8 at.%, XANES and EXAFS data indicate that the average Ti atomic bonding environment in Ti-aC coatings resembles that in cubic B1-TiC, consistent with TEM observation of precipitation of TiC nanocrystallites in the a-C matrix. Beyond the Ti dissolution limit, the Ti-aC coatings are nanocomposites with nanocrystalline TiC clusters embedded in an a-C matrix. A large scale, quasi one-dimensional composition modulation in the Ti-aC coatings was observed due to the particular coating deposition geometry. Elastic stiffness and hardness of the Ti-aC coatings were measured by instrumented nanoindentation and found to vary systematically as a function of Ti composition. Unlubricated friction coefficient of Ti-aC coatings against WC-Co balls was found to increase as the Ti composition increases. As Ti composition increases, the overall mechanical behavior of the Ti-aC coatings becomes more TiC-like.

  9. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Hao [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States)]. E-mail: hao.jiang@wpafb.af.mil; Hong Lianggou [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States); Venkatasubramanian, N. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Grant, John T. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Eyink, Kurt [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Wiacek, Kevin [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Fries-Carr, Sandra [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Enlow, Jesse [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Bunning, Timothy J. [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States)

    2007-02-26

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant ({epsilon} {sub r}) and dielectric loss (tan {delta}) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F {sub b}) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F{sub b} of 610 V/{mu}m, an {epsilon} {sub r} of 3.07, and a tan {delta} of 7.0 x 10{sup -3} at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss.

  10. Atomic energy

    CERN Multimedia

    1996-01-01

    Interviews following the 1991 co-operation Agreement between the Department of Atomic Energy (DAE) of the Government of India and the European Organization for Nuclear Research (CERN) concerning the participation in the Large Hadron Collider Project (LHC) . With Chidambaram, R, Chairman, Atomic Energy Commission and Secretary, Department of Atomic Energy, Department of Atomic Energy (DAE) of the Government of India and Professor Llewellyn-Smith, Christopher H, Director-General, CERN.

  11. Atom chips

    CERN Document Server

    Reichel, Jakob

    2010-01-01

    This book provides a stimulating and multifaceted picture of a rapidly developing field. The first part reviews fundamentals of atom chip research in tutorial style, while subsequent parts focus on the topics of atom-surface interaction, coherence on atom chips, and possible future directions of atom chip research. The articles are written by leading researchers in the field in their characteristic and individual styles.

  12. Fundamental study of Ti feedstock evaporation and the precursor formation process in inductively coupled thermal plasmas during TiO2 nanopowder synthesis

    Science.gov (United States)

    Kodama, Naoto; Tanaka, Yasunori; Kita, K.; Ishisaka, Y.; Uesugi, Y.; Ishijima, T.; Sueyasu, S.; Nakamura, K.

    2016-08-01

    Two-dimensional spectroscopic observations were conducted for an inductively coupled thermal plasma (ICTP) torch during TiO2 nanopowder synthesis. The feedstock was injected intermittently into the ICTP torch to investigate the Ti feedstock evaporation process clearly and to elucidate the formation process of precursor species. Spatiotemporal distributions of Ti atomic lines and TiO spectra were observed simultaneously inside the plasma torch with the observation system developed. The observation results showed that the injected Ti feedstock was evaporated to form high-density Ti atomic vapour in the torch, and that the generated Ti atomic vapour is transported and diffused by gas flow and the density gradient. In addition, TiO molecular vapour was generated almost simultaneously around the on-axis region in the torch.

  13. Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method

    Science.gov (United States)

    Xiao, Ming; Musselman, Kevin P.; Duley, Walter W.; Zhou, Norman Y.

    2017-04-01

    The resistive switching characteristics of TiO2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO2 nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO2 nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 104 s and an OFF/ON ratio of approximately 70. The switching mechanism of this Al/TiO2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field. This provides a facile way to obtain metal oxide nanowire-based ReRAM device in the future.

  14. Structural and electronic properties of Fe-doped BaTiO3 and SrTiO3

    Institute of Scientific and Technical Information of China (English)

    Zhang Chao; Wang Chun-Lei; Li Ji-Chao; Yang Kun

    2007-01-01

    We have performed first principles calculations of Fe-doped BaTiO3 and SrTiO3. Dopant formation energy, structure distortion, band structure and density of states have been computed. The dopant formation energy is found to be 6.8 eV and 6.5 eV for Fe-doped BaTiO3 and SrTiO3 respectively. The distances between Fe impurity and its nearest O atoms and between Fe atom and Ba or Sr atoms are smaller than those of the corresponding undoped bulk systems. The Fe defect energy band is obtained, which mainly originates from Fe 3d electrons. The band gap is still an indirect one after Fe doping for both BaTiO3 and SrTiO3, but the gap changes from Г-R point to Г-X point.

  15. Studies on Wear and Corrosion Resistances of Carbon Nitride Thin Films on Ti Alloy

    Institute of Scientific and Technical Information of China (English)

    LiJin-chai; GuoHuai-xi; LuXlan-feng; ZhangZhi-hong; YeMing-sheng

    2003-01-01

    CNx/SiCN composite films were prepared on titanium ( Ti ) alloy substrates by Radio Frequency Plasma Enhanced Chemical Vapor Deposition ( RF-PECVD ). As a buffer layer, SiCN ensured the adhesion of the CNx thin films on Ti substrates. X-ray diffraction (XRD) measurement revealed that the composite films possessed α-C3N4 structure.The microhardness of the films was 48 to 50 GPa. In or der totest the characteristics of wear and corrosion resistances, we prepared Ti alloy samples with and without CNx/SiCN composite films. Also for strengthening the effect of wear and corrosion, the wear tests were carried out under high load (12 MPa) and in 0. 9% NaCl solution. Results of the wear tests and the corrosive electrochemical measurements showed that the samples coated with CNx films had excellent charac-teristics of wear and corrosion resistances compared with Ti alloy substrate samples.

  16. Studies on Wear and Corrosion Resistances of Carbon Nitride Thin Films on Ti Alloy

    Institute of Scientific and Technical Information of China (English)

    Li Jin-chai; Guo Huai-xi; Lu Xian-feng; Zhang Zhi-hong; Ye Ming-sheng

    2003-01-01

    CNx/SiCN composite films were prepared on titanium ( Ti ) alloy substrates by Radio Frequency Plasma Enhanced Chemical Vapor Deposition ( RF-PECVD ). As a buffer layer, SiCN ensured the adhesion of the CNx thin films on Ti substrates. X-ray diffraction (XRD) measurement revealed that the composite films possessed α-C3N4 structure.The microhardness of the films was 48 to 50 GPa. In order to test the characteristics of wear and corrosion resistances, we prepared Ti alloy samples with and without CNx/SiCN composite films. Also for strengthening the effect of wear and corrosion, the wear tests were carried out under high load (12 MPa) and in 0. 9% NaCl solution. Results of the wear tests and the corrosive electrochemical measurements showed that the samples coated with CNx films had excellent characteristics of wear and corrosion resistances compared with Ti alloy substrate samples.

  17. Atomic site preferences and its effect on magnetic structure in the intermetallic borides M{sub 2}Fe(Ru{sub 0.8}T{sub 0.2}){sub 5}B{sub 2} (M=Sc, Ti, Zr; T=Ru, Rh, Ir)

    Energy Technology Data Exchange (ETDEWEB)

    Brgoch, Jakoah, E-mail: jrbrgoc@gmail.com [Department of Chemistry, Iowa State University, Ames, IA 50011 (United States); Mahmoud, Yassir A. [Department of Chemistry, Iowa State University, Ames, IA 50011 (United States); Miller, Gordon J., E-mail: gmiller@iastate.edu [Department of Chemistry, Iowa State University, Ames, IA 50011 (United States)

    2012-12-15

    The site preference for a class of intermetallic borides following the general formula M{sub 2}Fe(Ru{sub 0.8}T{sub 0.2}){sub 5}B{sub 2} (M=Sc, Ti, Zr; T=Ru, Rh, Ir), has been explored using ab initio and semi-empirical electronic structure calculations. This intermetallic boride series contains two potential sites, the Wyckoff 2c and 8j sites, for Rh or Ir to replace Ru atoms. Since the 8j site is a nearest neighbor to the magnetically active Fe atom, whereas the 2c site is a next nearest neighbor, the substitution pattern should play an important role in the magnetic structure of these compounds. The substitution preference is analyzed based on the site energy and bond energy terms, both of which arise from a tight-binding evaluation of the electronic band energy, and are known to influence the locations of atoms in extended solids. According to these calculations, the valence electron-rich Rh and Ir atoms prefer to occupy the 8j site, a result also corroborated by experimental evidence. Additionally, substitution of Rh or Ir at the 8j site results in a modification of the magnetic structure that ultimately results in larger local magnetic moment on the Fe atoms. - Graphical abstract: The site preference for electron rich atoms to occupy the 8j (gray) site is identified in these intermetallic borides, while the magnetic structure is modified as a function of the substituted atoms band center. Highlights: Black-Right-Pointing-Pointer We identify the energetics dictating the site preference in a series of intermetallic borides. Black-Right-Pointing-Pointer Establish substitution rules for use in future directed synthetic preparations. Black-Right-Pointing-Pointer Identified changes in magnetic structure that accompany the site preference.

  18. Atomic polarizabilities

    Energy Technology Data Exchange (ETDEWEB)

    Safronova, M. S. [Department of Physics and Astronomy, University of Delaware, Newark, DE 19716 (United States); Mitroy, J. [School of Engineering, Charles Darwin University, Darwin NT 0909 (Australia); Clark, Charles W. [Joint Quantum Institute, National Institute of Standards and Technology and the University of Maryland, Gaithersburg, Maryland 20899-8410 (United States); Kozlov, M. G. [Petersburg Nuclear Physics Institute, Gatchina 188300 (Russian Federation)

    2015-01-22

    The atomic dipole polarizability governs the first-order response of an atom to an applied electric field. Atomic polarization phenomena impinge upon a number of areas and processes in physics and have been the subject of considerable interest and heightened importance in recent years. In this paper, we will summarize some of the recent applications of atomic polarizability studies. A summary of results for polarizabilities of noble gases, monovalent, and divalent atoms is given. The development of the CI+all-order method that combines configuration interaction and linearized coupled-cluster approaches is discussed.

  19. Surface alloying of Cu with Ti by double glow discharge process

    Institute of Scientific and Technical Information of China (English)

    袁庆龙; 池成忠; 苏永安; 徐重; 唐宾

    2004-01-01

    The surface of pure copper alloyed with Ti using double glow discharge process was investigated. The morphology, structure and forming mechanism of the Cu-Ti alloying layer were analyzed. The microhardness and wear resistance of the Cu-Ti alloying layer were measured, and compared with those of pure copper. The results indicate that the surface of copper activated by Ar and Ti ions bombardment is favorable to absorption and diffusion of Ti element. In current experimental temperature, as the Ti content increases, the liquid phase occurs between the deposited layer and diffused layer, which makes the Ti ions and atoms easy to dissolve and the thickness of Cu-Ti alloying layer increase rapidly. After cooling, the structure of the alloying layer is composed of CuTi, Cu4 Ti and Cu(Ti) solid solution. The solid solution strengthening and precipitation strengthening effects of Ti result in high surface hardness and wear resistance.

  20. Ultracold atoms on atom chips

    DEFF Research Database (Denmark)

    Krüger, Peter; Hofferberth, S.; Haller, E.

    2005-01-01

    Miniaturized potentials near the surface of atom chips can be used as flexible and versatile tools for the manipulation of ultracold atoms on a microscale. The full scope of possibilities is only accessible if atom-surface distances can be reduced to microns. We discuss experiments in this regime...

  1. Characteristics of carbon coatings on optical fibers prepared by radio-frequency plasma enhanced chemical vapor deposition with different H{sub 2}/C{sub 2}H{sub 2} ratios

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Hung-Chien; Yu, Jen-Feng [Department of Materials Science and Engineering, National Chung Hsing University 250 Kuo Kuang Road, Taichung 402, Taiwan (China); Shiue, Sham-Tsong, E-mail: stshiue@dragon.nchu.edu.t [Department of Materials Science and Engineering, National Chung Hsing University 250 Kuo Kuang Road, Taichung 402, Taiwan (China); Lin, Hung-Yi [Mechanical and Systems Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan (China)

    2010-10-01

    Characteristics of carbon coatings on optical fibers prepared by radio-frequency plasma enhanced chemical vapor deposition with different H{sub 2}/C{sub 2}H{sub 2} ratios are investigated. Five kinds of carbon coatings are prepared with H{sub 2}/C{sub 2}H{sub 2} ratios of 2, 4, 6, 8, and 10. Experimental results show that the deposition rate and surface roughness of carbon coatings decrease as the H{sub 2}/C{sub 2}H{sub 2} ratio increases. When the H{sub 2}/C{sub 2}H{sub 2} ratio changes from 2 to 8, the increase of H{sub 2}/C{sub 2}H{sub 2} ratios detrimentally yields sp{sup 3} carbon atoms and sp{sup 3}-CH{sub 3} bonds in the carbon coatings. However, when the H{sub 2}/C{sub 2}H{sub 2} ratio exceeds 8, the hydrogen retards the growth of the graphite structure. Moreover, the redundant hydrogen radicals favor bonding with the dangling bonds in the coating surface. Therefore, when the H{sub 2}/C{sub 2}H{sub 2} ratio increases from 8 to 10, the amounts of sp{sup 3} carbon atoms and sp{sup 3}-CH{sub 3} bonds in the carbon coatings increase. At an H{sub 2}/C{sub 2}H{sub 2} ratio of 8, the carbon coating exhibits excellent water-repellency and thermal-loading resistance, and so this ratio is the best for producing a hermetically sealed optical fiber coating.

  2. Sputter deposition and characterisation of hard wear-resistant Ti/TiN multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Simmonds, M.C.; Swygenhoven, H. van [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1997-09-01

    Multilayered Ti/TiN thin films have been synthesized by magnetron sputter deposition. Alternating layers of Ti and TiN with layer thickness in the 5-50 nm range are sequentially deposited. The structure of the films have been characterised by atomic force microscopy (AFM), X-ray diffraction and reflection and Auger depth profiling. The mechanical properties have been investigated using pin-on-disc wear rate testing, nanoindentation determination of hardness and micro scratch testing. (author) 1 fig., 3 refs.

  3. A Dramatic Influence of Ti Atom on the Electronic Structures of (Al16Ti)n± (n=0-3) Ionic Clusters and Their Interaction with H2O Molecules%(Al16Ti)n±(n=0-3)离子团簇中Ti原子对电子结构及其与H2O分子相互作用的显著影响

    Institute of Scientific and Technical Information of China (English)

    刘以良; 滑亚文; 蒋刚; 陈军

    2015-01-01

    . Based on the geometries of the studied adsorption complexes, it was found that the most stable structures were prone to oxygen-based adsorption onto Ti atom. (Al16TiH2O)+ion featured the shortest average O―H bond length, that was~0.0003 nm longer than that observed in isolated H2O molecule. The O―H bond length increased with either increasing or decreasing number of the electrons. The studies implied that Ti dopant in Al ionic clusters improved the dissociation efficiency of H2O molecules. Furthermore, the doping effect played a more important role than the geometry effect in determining the electronic structures of the (Al16Ti)n ionic clusters and their interaction with H2O molecules.

  4. The effect of Al segregation on Schottky barrier height and effective work function in TiAl/TiN/HfO2 gate stacks

    Science.gov (United States)

    Kim, Geun-Myeong; Oh, Young Jun; Chang, K. J.

    2016-07-01

    We perform first-principles density functional calculations to investigate the effects of Al incorporation on the p-type Schottky barrier height ≤ft({φ\\text{p}}\\right) and the effective work function for various high-k/metal gate stacks, such as TiN/HfO2 with interface Al impurities, Ti1-x Al x N/HfO2, and TiAl/TiN/HfO2. When Al atoms substitute for the interface Ti atoms at TiN/HfO2 interface, interface dipole fields become stronger, leading to the increase of {φ\\text{p}} and thereby the n-type shift of effective work function. In Ti1-x Al x N/HfO2 interface, {φ\\text{p}} linearly increases with the Al content, attributed to the presence of interface Al atoms. On the other hand, in TiAl/TiN/HfO2 interface, where Al is assumed not to segregate from TiAl to TiN, {φ\\text{p}} is nearly independent of the thickness of TiAl. Our results indicate that Al impurities at the metal/dielectric interface play an important role in controlling the effective work function, and provide a clue to understanding the n-type shift of the effective work function observed in TiAl/TiN/HfO2 gate stacks fabricated by using thegate-last process.

  5. The influence of Ti doping and annealing on Ce2Ti2O7 flash memory devices

    Science.gov (United States)

    Kao, Chyuan Haur; Chen, Su Zhien; Luo, Yang; Chiu, Wang Ting; Chiu, Shih Wei; Chen, I. Chien; Lin, Chan-Yu; Chen, Hsiang

    2017-02-01

    In this research, a CeO2 film with Ti doping was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. Since incorporation of Ti atoms into the film could fix dangling bonds and defects, the Ce2Ti2O7 trapping layer with annealing treatment could have a larger memory window and a faster programming/erasing speed. To confirm the origin, multiple material analyses indicate that annealing at an appropriate temperature and Ti doping could enhance crystallization. The Ce2Ti2O7-based memory device is promising for future industrial flash memory applications.

  6. Mass spectrometric study of the thermochemistry of gaseous EuTiO3 and TiO2

    Science.gov (United States)

    Balducci, G.; Gigli, G.; Guido, M.

    1985-08-01

    The gaseous molecule EuTiO3 has been investigated in a high temperature mass spectrometric study of vapors over the europium-titanium-oxygen system. From the enthalpy of reaction: EuTiO3(g)=EuO(g)+TiO2(g) and proper ancillary data, the atomization energy of this molecule has been determined. In addition, from the study of the gaseous exchange reaction: TiO2(g)+Eu(g)=TiO(g)+EuO(g) the dissociation energy of TiO2(g) has been derived and compared with previous results. The dissociation energies proposed are: D○0,at(EuTiO3) =2278±28 kJ mol-1 and D○0,at(TiO2) =1260±12 kJ mol-1.

  7. Effects of strong interactions between Ti and ceria on the structures of Ti/CeO2.

    Science.gov (United States)

    Yao, Xiao-Dan; Zhu, Kong-Jie; Teng, Bo-Tao; Yu, Cao-Ming; Zhang, Yun-Lei; Liu, Ya; Fan, Maohong; Wen, Xiao-Dong

    2016-11-30

    The effects of strong interactions between Ti and ceria on the structures of Ti/CeO2(111) are systematically investigated by density functional theory calculation. To our best knowledge, the adsorption energy of a Ti atom at the hollow site of CeO2 is the highest value (-7.99 eV) reported in the literature compared with those of Au (-0.88--1.26 eV), Ag (-1.42 eV), Cu (-2.69 eV), Pd (-1.75 eV), Pt (-2.62 eV) and Sn (-3.68 eV). It is very interesting to find that Ti adatoms disperse at the hollow site of CeO2(111) to form surface TiOx species, instead of aggregating to form Ti metal clusters for the Ti-CeO2 interactions that are much stronger than those of Ti-Ti ones. Ti adatoms are completely oxidized to Ti(4+) ions if they are monatomically dispersed on the next near hollow sites of CeO2(111) (xTi-NN-hollow); while Ti(3+) ions are observed when they locate at the near hollow sites (xTi-N-hollow). Due to the electronic repulsive effects among Ti(3+) ions, the adsorption energies of xTi-N-hollow are slightly weaker than those of xTi-NN-hollow. Simultaneously, the existence of unstable Ti(3+) ions on xTi-N-hollow also leads to the restructuring of xTi-N-hollow by surface O atoms of ceria transferring to the top of Ti(3+) ions, or oxidation by O2 adsorption and dissociation. Both processes improve the stability of the xTi/CeO2 system by Ti(3+) oxidation. Correspondingly, surface TiO2-like species form. This work sheds light into the structures of metal/CeO2 catalysts with strong interactions between the metal and the ceria support.

  8. Site preference of Zr in Ti3Al and phase stability of Ti2ZrAl

    Indian Academy of Sciences (India)

    C Ravi; R Asokamani

    2003-01-01

    The site preference of Zr atoms in Ti3Al and the phase stability of Ti2ZrAl are examined using first-principles electronic structure total energy calculations. Of the sixteen possible ways in which Ti, Zr and Al atoms can be arranged, in the lattice sites corresponding to $D0_{19}$ structure of Ti3Al, to obtain Ti2ZrAl, it is s hown that Zr atoms prefer to get substituted at the Ti sites. It is further shown that among the seven crystal structures considered, $D0_{19}$-like and $L1_2$-like are the competing ground-state structures of Ti2ZrAl. The above results are in agreement with the experimental results reported in the literature. Calculated values of equilibrium lattice parameters, heat of formation and bulk modulus of Ti2ZrAl are presented. The basis for the structural stability and bonding are analysed in terms of the density of states. Between the two possible 2-like structures, Ti2ZrAl shows enhanced stability for the one where Zr is substituted in the Ti sublattice, which again is in agreement with the experimental observation.

  9. Atomic physics

    CERN Document Server

    Born, Max

    1989-01-01

    The Nobel Laureate's brilliant exposition of the kinetic theory of gases, elementary particles, the nuclear atom, wave-corpuscles, atomic structure and spectral lines, electron spin and Pauli's principle, quantum statistics, molecular structure and nuclear physics. Over 40 appendices, a bibliography, numerous figures and graphs.

  10. Atomic Calligraphy

    Science.gov (United States)

    Imboden, Matthias; Pardo, Flavio; Bolle, Cristian; Han, Han; Tareen, Ammar; Chang, Jackson; Christopher, Jason; Corman, Benjamin; Bishop, David

    2013-03-01

    Here we present a MEMS based method to fabricate devices with a small number of atoms. In standard semiconductor fabrication, a large amount of material is deposited, after which etching removes what is not wanted. This technique breaks down for structures that approach the single atom limit, as it is inconceivable to etch away all but one atom. What is needed is a bottom up method with single or near single atom precision. We demonstrate a MEMS device that enables nanometer position controlled deposition of gold atoms. A digitally driven plate is swept as a flux of gold atoms passes through an aperture. Appling voltages on four comb capacitors connected to the central plate by tethers enable nanometer lateral precision in the xy plane over 15x15 sq. microns. Typical MEMS structures have manufacturing resolutions on the order of a micron. Using a FIB it is possible to mill apertures as small as 10 nm in diameter. Assuming a low incident atomic flux, as well as an integrated MEMS based shutter with microsecond response time, it becomes possible to deposit single atoms. Due to their small size and low power consumption, such nano-printers can be mounted directly in a cryogenic system at ultrahigh vacuum to deposit clean quench condensed metallic structures.

  11. Formation of Ti(III) and Ti(IV) states in Ti{sub 3}O{sub 5} nano- and microfibers obtained from hydrothermal annealing of C-doped TiO{sub 2} on Si

    Energy Technology Data Exchange (ETDEWEB)

    Stem, Nair, E-mail: nairstem@hotmail.com [Laboratório de Sistemas Integráveis (LSI), Escola Politécnica, Universidade de São Paulo, Av. Prof. Luciano Gualberto 158, 05508900 São Paulo, SP (Brazil); Souza, Michele L.; Araújo de Faria, Dalva Lúcia Araújo [Laboratório de Espectroscopia Molecular (LEM), Instituto de Química, Universidade de São Paulo, Av. Prof. Lineu Prestes 748, 05508900 São Paulo, SP (Brazil); Santos Filho, Sebastião G. dos [Laboratório de Sistemas Integráveis (LSI), Escola Politécnica, Universidade de São Paulo, Av. Prof. Luciano Gualberto 158, 05508900 São Paulo, SP (Brazil)

    2014-05-02

    In this work, it is investigated the formation of Ti(III) and Ti(IV) states at the surface and in the bulk of the Ti{sub 3}O{sub 5} material grown as meshes of nano- and micro-fibers obtained from hydrothermal annealing of C-doped TiO{sub 2} on Si. The topography and distribution of the fibers in the meshes were characterized by atomic force microscopy. When the fiber distribution was more compact, a higher photoluminescence signal at 850 nm (1.46 eV) was obtained, indicating the presence of a higher number of defects corresponding to the Ti(III) sites. From X-ray photoelectron spectroscopy, it was obtained a Ti(III)/Ti(IV) ratio much lower than the expected value for the Ti{sub 3}O{sub 5} phase (2 Ti(III): 1 Ti(IV)). The discrepancy was mainly attributed to the reaction of surface Ti(III) states of the Ti{sub 3}O{sub 5} fibers with water during the hydrothermal annealing, resulting in surface Ti(IV) with -OH radicals. On the other hand, X-ray photoelectron spectroscopy also indicated that substitutional and interstitial carbon atoms coexist, elemental carbon exists in the samples due to the co-deposition process and, as a result, the carbon inside of the TiO{sub 2} rutile lattice is acting as one of the precursors for the formation of Ti{sub 3}O{sub 5}. - Highlights: • Ti(III) states are detected inside of Ti{sub 3}O{sub 5} nano- and microfibers. • Ti(IV) states are predominantly detected on the surface of Ti{sub 3}O{sub 5} nano- and microfibers. • Photoluminescence at 850 nm for Ti{sub 3}O{sub 5} is due to defects associated to Ti(III). • Rutile possibly changes to C2/m Ti{sub 3}O{sub 5} during the hydrothermal annealing of C-doped TiO{sub 2}.

  12. Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

    Science.gov (United States)

    Naito, Teruki; Konno, Nobuaki; Yoshida, Yukihisa

    2016-07-01

    Open air silicon deposition was performed by combining silane-free atmospheric pressure plasma-enhanced chemical transport and a newly developed local ambient gas control technology. The effect of air contamination on silicon deposition was investigated using a vacuum chamber, and the allowable air contamination level was confirmed to be 3 ppm. The capability of the local ambient gas control head was investigated numerically and experimentally. A safe and clean process environment with air contamination less than 1 ppm was achieved. Combining these technologies, a microcrystalline silicon film was deposited in open air, the properties of which were comparable to those of silicon films deposited in a vacuum chamber.

  13. Electron energy-loss spectroscopy analysis of low-temperature plasma-enhanced chemically vapor deposited a-C:H films

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, A.J.; Benson, D.K.; Tracy, C.E.; Kazmerski, L.L.; Wager, J.F.

    1989-05-01

    Electron energy-loss spectroscopy (EELS) has been applied to the analysis of a-C:H films grown on various substrates by a unique low-temperature (<100 /sup 0/C) plasma-enhanced chemical vapor deposition (PECVD) process using ethylene and hydrogen gases. EELS data are used to characterize the relative amounts of fourfold coordinated sp/sup 3/ carbon bonding to threefold coordinated sp/sup 2/ carbon bonding as well as the relative order/disorder due to substrate effects. Ellipsometric and transmission measurements provide optical constants for the PECVD a-C:H films.

  14. Synthesis of few-layer graphene on a Ni substrate by using DC plasma enhanced chemical vapor deposition (PE-CVD)

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jeong Hyuk; Castro, Edward Joseph; Hwang, Yong Gyoo; Lee, Choong Hun [Wonkwang University, Iksan (Korea, Republic of)

    2011-01-15

    In this work, few-layer graphene (FLG) was successfully grown on polycrystalline Ni a large scale by using DC plasma enhanced chemical vapor deposition (DC PE-CVD), which may serve as an alternative route in large-scale graphene synthesis. The synthesis time had an effect on the quality of the graphene produced. The applied DC voltage, on the other hand, influenced the minimization of the defect densities in the graphene grown. We also present a method of producing a free-standing polymethyl methacrylate (PMMA)/graphene membrane on a FeCl{sub 3(aq)} solution, which could then be transferred to the desired substrate.

  15. Mechanical alloying and sintering of aluminum reinforced with SiC nanopowders produced by plasma-enhanced chemical-vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Costa, J.; Fort, J.; Roura, P. [GRM, Dept. de Enginyeria Industrial, Universitat de Girona (Spain); Froyen, L. [MTM Katholieke Universiteit Leuven (Belgium); Viera, G.; Bertran, E. [FEMAN, Dept. Fisica Aplicada i Optica, Universitat de Barcelona (Spain)

    2000-07-01

    Nanometric powders of stoichiometric SiC have been synthesised by plasma-enhanced chemical-vapour deposition. These are constituted by amorphous particles with diameters ranging from 10 to 100 nm. Due to their high hydrogen content, a heat treatment at 900 C was needed to prevent spontaneous oxidation. The stabilized SiC powder was mechanically alloyed with aluminum particles of 40 {mu}m in diameter and the alloy was formed by hot isostatic sintering. The SiC content ranged from 0 to 5% in weight. A detailed analysis of the alloyed powder microstructure is presented as well as preliminary results concerning the mechanical properties after sintering. (orig.)

  16. Local Atomic Structure Deviation from Average Structure of Na0.5Bi0.5TiO3: Combined X-ray and Neutron Total Scattering Study

    Science.gov (United States)

    2013-03-27

    previously in Davies et al.25 Reactant powders, Bi2O3 (99.975% purity, Alfa Aesar, Ward Hill, MA), TiO2 (98% purity, Fisher Chemical, Pittsburgh, PA...synthesis step (hereafter referred to as “calcined”). Samples were then also sintered and densified into pellets at 1100 ◦C for 1 h. The sintered pellets

  17. Atomic Layer Deposition Technology and Its Innovative Applications%原子层沉积技术及其创新运用

    Institute of Scientific and Technical Information of China (English)

    施云波; 于明岩; 饶志鹏; 赵士瑞

    2014-01-01

    本文分析并总结了涉及原子层沉积(atomic layer deposition,ALD)技术基本原理的若干问题.介绍了等离子增强原子层沉积(plasma enhanced atomic layer deposition,PEALD)技术的优势及常见运用.相对于传统ALD系统,PEALD最大的特点在于其能够通过等离子体放电来活化前驱体源,提高对前驱体源,尤其是气态源的利用.利用PEALD这一特点可以增加传统ALD技术中可用氮源的种类.同时PEALD原位掺杂作为一种掺杂方法能够用于对光催化材料的掺杂改性,提高其光催化性能.此外,PEALD技术还适用于温度敏感材料和柔性材料上的薄膜沉积,可以获得更低的电阻率和更高的薄膜密度等.本文重点介绍了本课题组提出的PEALD原位掺杂技术及其对TiO2光催化剂的掺杂改性运用.最后对原位掺杂技术的研究方向和发展进行了展望.

  18. Interface microstructure of the brazed zirconia and Ti-6Al-4V using Ti-based amorphous filler

    Directory of Open Access Journals (Sweden)

    Liu Y.

    2013-01-01

    Full Text Available The polycrystalline ZrO2−3mol.%Y2O3 was brazed to Ti-6Al-4V using a Ti47Zr28Cu14Ni11 (at.% amorphous ribbon at 1123 K in a high vacuum. The microstructure of the interface and evolution mechanism of the joint was investigated. The experimental result showed that the typical interfacial microstructures of the joints consisted of ZrO2/TiO+TiO2+Cu2Ti4O+Ni2Ti4O/α-Ti+(Ti,Zr2(Cu,Ni eutectic/(Ti,Zr2(Cu,Ni/acicular Widmanstäten structure/Ti-6Al-4V alloy. The microstructure of the brazed joint was related to the solution and chemical reaction among atoms during brazing. According to the mechanical property tests the joint brazed at 1123 K for 30 min obtained the maximum shear strength 63 MPa. Both the white block intermetallic compound (Ti,Zr2(Cu,Ni and the coarse α-Ti+(Ti,Zr2(Cu,Ni eutectic structure should be avoided forming in the brazed joint.

  19. Interstitial and substitutional Zr in SrTiO3

    Science.gov (United States)

    Jaffe, John; van Ginhoven, Renee; Jiang, Weilin

    2011-03-01

    We investigate Zr in SrTi O3 (STO) as an electronic dopant and as a model for nuclear waste forms in which radioactive Sr decays to Y and then to stable Zr through beta emission. Density functional theory (DFT) within the supercell model is used to predict the thermodynamic stability and electronic states of interstitial and Sr- or Ti-substituted Zr atoms in the STO lattice. Native point defects such as vacancies and antisites are also considered. When Zr replaces Sr, its most stable configuration is to simply occupy the Sr site (instead of, for example, replacing a Ti and displacing the Ti to the Sr site.) For Zr added to the lattice, its most stable configuration is to replace a Ti, making a Zr Ti impurity plus a Ti interstitial (as opposed to the Zr just remaining as an interstitial atom.) Zr Sr is predicted to be a double electron donor, Zr Ti is electrically inactive and interstitial Zr and Ti are predicted to be quadruple donors, with all donor levels in the conduction band. Zr Sr and the tetravalent interstitials are all predicted to increase the crystal volume, and the interstitials also are predicted to lead to a tetragonal distortion of the lattice. Experiments with injection of Zr atoms into STO qualitatively confirm these predictions of crystal structural changes. Supported by U.S. Department of Energy Waste Form Campaign.

  20. Interfacial oxygen under TiO2 supported Au clusters revealed by a genetic algorithm search

    DEFF Research Database (Denmark)

    Vilhelmsen, Lasse Baarvig; Hammer, B.

    2013-01-01

    We present a density functional theory study of the oxidation of 1D periodic rods supported along the [001] direction on the rutile TiO2(110) surface. The study shows evidence for an oxidation of the interface between the supported Au and the TiO2 crystal. The added O atoms adsorb at the 5f-Ti at...

  1. Kinetic Atom.

    Science.gov (United States)

    Wilson, David B.

    1981-01-01

    Surveys the research of scientists like Joule, Kelvin, Maxwell, Clausius, and Boltzmann as it comments on the basic conceptual issues involved in the development of a more precise kinetic theory and the idea of a kinetic atom. (Author/SK)

  2. Single liquid-source plasma enhanced metalorganic chemical vapor deposition of YBa sub 2 Cu sub 3 O sub 7-x thin films. Technical report

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, J.; Gardiner, R.; Kirlin, P.S.; Boerstler, R.W.; Steinbeck, J.

    1992-07-29

    High quality YBa2Cu3O7-x films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd)n, (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction. measurements indicated that single phase, highly c-axis oriented YBa2Cu3O7-x was formed in-situ at a substrate temperature 680 degC. The as-deposited films exhibited a mirror-like surface, had transition temperature Tc = 89 K, Delta Tc < 1K, and Jc(77K) = 106 A/cm2. Plasma enhanced metalorganic chemical vapor deposition, YBCO, superconductors.

  3. The Process of TiB2-Cu Composite Phase and Structure Formation during Combustion Synthesis

    Institute of Scientific and Technical Information of China (English)

    XU Qiang; ZHANG Xinghong; HAN Jiecai; PAN Wei

    2006-01-01

    The reaction process of combustion synthesis for TiB2- Cu was investigated in detail using combustion-wave arresting experiment, X-ray diffraction (XRD) analysis, SEM analysis and differential thermal analysis ( DTA ). The XRD analysis results for the different parts of the quenched specimen shaw that TiCux intermetallic phase firstly forms with the propagation of combustion wave, and then Ti1.87 B50 and Ti3 B4 metastable phases come forth due to the diffusion of B atoms and finally the stable TiB2 phase forms because of the continuous diffusion of B atoms. The formation of TiB2 phase is not completed by one step, but undergoes several transient processes. The process of reaction synthesis for Ti-B-Cu ternary system can be divided into three main stages: melting of Cu and Ti, and the formation of Cu- Ti melt and few TiCux , TiBx intermetallic phases; large numbers of TiCux intermetallic phases formation and some fine TiB2 particles precipitation; and the TiB2 particles coarsening and the stable TiB2 and Cu two phases formation in the final product.

  4. Synthesis of Visible-Light-Responsive Cu and N-Codoped AC/TiO2 Photocatalyst Through Microwave Irradiation

    OpenAIRE

    Tian, Fei; Wu, Zhansheng; Yan, Yujun; Ye, Bang-Ce; Liu, Dandan

    2016-01-01

    N–Cu-activated carbon (AC)/TiO2 nanoparticles were prepared by the sol-gel technique through microwave irradiation to modify the visible-light response of TiO2. Their structure, surface chemical composition, and optical absorption properties were characterized. The results showed that the codoped particles had a higher surface area and smaller particle size than pure AC/TiO2 and monodoped AC/TiO2. X-ray photoelectron spectroscopy of N–Cu-AC/TiO2 showed that Cu atoms replaced Ti atom sites, wh...

  5. Synthesis of thin films in boron-carbon-nitrogen ternary system by microwave plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Kukreja, Ratandeep Singh

    The Boron Carbon Nitorgen (B-C-N) ternary system includes materials with exceptional properties such as wide band gap, excellent thermal conductivity, high bulk modulus, extreme hardness and transparency in the optical and UV range that find application in most fields ranging from micro-electronics, bio-sensors, and cutting tools to materials for space age technology. Interesting materials that belong to the B-C-N ternary system include Carbon nano-tubes, Boron Carbide, Boron Carbon Nitride (B-CN), hexagonal Boron Nitride ( h-BN), cubic Boron Nitride (c-BN), Diamond and beta Carbon Nitride (beta-C3N4). Synthesis of these materials requires precisely controlled and energetically favorable conditions. Chemical vapor deposition is widely used technique for deposition of thin films of ceramics, metals and metal-organic compounds. Microwave plasma enhanced chemical vapor deposition (MPECVD) is especially interesting because of its ability to deposit materials that are meta-stable under the deposition conditions, for e.g. diamond. In the present study, attempt has been made to synthesize beta-carbon nitride (beta-C3N4) and cubic-Boron Nitride (c-BN) thin films by MPECVD. Also included is the investigation of dependence of residual stress and thermal conductivity of the diamond thin films, deposited by MPECVD, on substrate pre-treatment and deposition temperature. Si incorporated CNx thin films are synthesized and characterized while attempting to deposit beta-C3N4 thin films on Si substrates using Methane (CH4), Nitrogen (N2), and Hydrogen (H2). It is shown that the composition and morphology of Si incorporated CNx thin film can be tailored by controlling the sequence of introduction of the precursor gases in the plasma chamber. Greater than 100mum size hexagonal crystals of N-Si-C are deposited when Nitrogen precursor is introduced first while agglomerates of nano-meter range graphitic needles of C-Si-N are deposited when Carbon precursor is introduced first in the

  6. Direct Fabrication of Carbon Nanotubes STM Tips by Liquid Catalyst-Assisted Microwave Plasma-Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Fa-Kuei Tung

    2009-01-01

    Full Text Available Direct and facile method to make carbon nanotube (CNT tips for scanning tunneling microscopy (STM is presented. Cobalt (Co particles, as catalysts, are electrochemically deposited on the apex of tungsten (W STM tip for CNT growth. It is found that the quantity of Co particles is well controlled by applied DC voltage, concentration of catalyst solution, and deposition time. Using optimum growth condition, CNTs are successfully synthesized on the tip apex by catalyst-a