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Sample records for plasma-enhanced chemical vapour

  1. Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Matthew T. Cole

    2013-05-01

    Full Text Available A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child’s law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing sheath fields by up to 7 mm. A 7 mbar growth atmosphere combined with a 25 W plasma permitted the concurrent growth and alignment of carbon nanotubes with electric fields of the order of 0.04 V μm−1 with linear packing densities of up to ~5 × 104 cm−1. These results open up the potential for multi-directional in situ alignment of carbon nanotubes providing one viable route to the fabrication of many novel optoelectronic devices.

  2. Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition.

    Science.gov (United States)

    Sharma, Uttam; Chauhan, Sachin S.; Sharma, Jayshree; Sanyasi, A. K.; Ghosh, J.; Choudhary, K. K.; Ghosh, S. K.

    2016-10-01

    The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS.

  3. Characterization of Thin Films Deposited with Precursor Ferrocene by Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YAO Kailun; ZHENG Jianwan; LIU Zuli; JIA Lihui

    2007-01-01

    In this paper,the characterization of thin films,deposited with the precursor ferrocene(FcH)by the plasma enhanced chemical vapour deposition(PECVD)technique,was investigated.The films were measured by Scanning Electronic Microscopy(SEM),Atomic Force Microscopy(AFM),Electron Spectroscopy for Chemical Analysis(ESCA),and superconducting Quantum Interference Device(SQUID).It was observed that the film's layer is homogeneous in thickness and has a dense morphology without cracks.The surface roughness is about 36 nm.From the results of ESCA,it can be inferred that the film mainly contains the compound FeOOH,and carbon is combined with oxygen in different forms under different supply-powers.The hysteresis loops indicate that the film is of soft magnetism.

  4. Microwave plasma-enhanced chemical vapour deposition growth of carbon nanostructures

    Directory of Open Access Journals (Sweden)

    Shivan R. Singh

    2010-05-01

    Full Text Available The effect of various input parameters on the production of carbon nanostructures using a simple microwave plasma-enhanced chemical vapour deposition technique has been investigated. The technique utilises a conventional microwave oven as the microwave energy source. The developed apparatus is inexpensive and easy to install and is suitable for use as a carbon nanostructure source for potential laboratory-based research of the bulk properties of carbon nanostructures. A result of this investigation is the reproducibility of specific nanostructures with the variation of input parameters, such as carbon-containing precursor and support gas flow rate. It was shown that the yield and quality of the carbon products is directly controlled by input parameters. Transmission electron microscopy and scanning electron microscopy were used to analyse the carbon products; these were found to be amorphous, nanotubes and onion-like nanostructures.

  5. Preparation of carbon nanotubes with different morphology by microwave plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M. [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, 71 Al-Farabi av., 050038 Almaty (Kazakhstan); Institute of Physics and Technology, Ibragimov Street 11, 050032 Almaty (Kazakhstan); Mansurov, Zulkhair [Al-Farabi Kazakh National University, 71 Al-Farabi av., 050038 Almaty (Kazakhstan); Tokmoldin, S.Zh. [Institute of Physics and Technology, Ibragimov Street 11, 050032 Almaty (Kazakhstan)

    2010-04-15

    In this work we present a part of our results about the preparation of carbon nanotube with different morphologies by using microwave plasma enhanced chemical vapour deposition MPECVD. Well aligned, curly, carbon nanosheets, coiled carbon sheets and carbon microcoils have been prepared. We have investigated the effect of the different growth condition parameters such as the growth temperature, pressure and the hydrogen to methane flow rate ratio on the morphology of the carbon nanotubes. The results showed that there is a great dependence of the morphology of carbon nanotubes on these parameters. The yield of the carbon microcoils was high when the growth temperature was 700 C. There is a linear relation between the growth rate and the methane to hydrogen ratio. The effect of the gas pressure on the CNTs was also studied. Our samples were investigated by scanning electron microscope and Raman spectroscopy (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Wang Jin-Liang; Wu Er-Xing

    2007-01-01

    The B-and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) are prepared by plasma-enhanced chemical vapour deposition (PECVD) .The microstructures of doped nc-Si:H films are carefully and systematically char acterized by using high resolution electron microscopy (HREM) ,Raman scattering,x-ray diffraction (XRD) ,Auger electron spectroscopy (AES) ,and resonant nucleus reaction (RNR) .The results show that as the doping concentration of PH3 increases,the average grain size (d) tends to decrease and the crystalline volume percentage (Xc) increases simultaneously.For the B-doped samples,as the doping concentration of B2H6 increases,no obvious change in the value of d is observed,but the value of Xc is found to decrease.This is especially apparent in the case of heavy B2H6 doped samples,where the films change from nanocrystalline to amorphous.

  7. Modelling and optimization of film thickness variation for plasma enhanced chemical vapour deposition processes

    Science.gov (United States)

    Waddell, Ewan; Gibson, Des; Lin, Li; Fu, Xiuhua

    2011-09-01

    This paper describes a method for modelling film thickness variation across the deposition area within plasma enhanced chemical vapour deposition (PECVD) processes. The model enables identification and optimization of film thickness uniformity sensitivities to electrode configuration, temperature, deposition system design and gas flow distribution. PECVD deposition utilizes a co-planar 300mm diameter electrodes with separate RF power matching to each electrode. The system has capability to adjust electrode separation and electrode temperature as parameters to optimize uniformity. Vacuum is achieved using dry pumping with real time control of butterfly valve position for active pressure control. Comparison between theory and experiment is provided for PECVD of diamond-like-carbon (DLC) deposition onto flat and curved substrate geometries. The process utilizes butane reactive feedstock with an argon carrier gas. Radiofrequency plasma is used. Deposited film thickness sensitivities to electrode geometry, plasma power density, pressure and gas flow distribution are demonstrated. Use of modelling to optimise film thickness uniformity is demonstrated. Results show DLC uniformity of 0.30% over a 200 mm flat zone diameter within overall electrode diameter of 300mm. Thickness uniformity of 0.75% is demonstrated over a 200mm diameter for a non-conformal substrate geometry. Use of the modelling method for PECVD using metal-organic chemical vapour deposition (MOCVD) feedstock is demonstrated, specifically for deposition of silica films using metal-organic tetraethoxy-silane. Excellent agreement between experimental and theory is demonstrated for conformal and non-conformal geometries. The model is used to explore scalability of PECVD processes and trade-off against film thickness uniformity. Application to MEMS, optical coatings and thin film photovoltaics is discussed.

  8. Nanostructured silicon carbon thin films grown by plasma enhanced chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Coscia, U. [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); CNISM Unita' di Napoli, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Ambrosone, G., E-mail: ambrosone@na.infn.it [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); SPIN-CNR, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Basa, D.K. [Department of Physics, Utkal University, Bhubaneswar 751004 (India); Rigato, V. [INFN Laboratori Nazionali Legnaro, 35020 Legnaro (Padova) (Italy); Ferrero, S.; Virga, A. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)

    2013-09-30

    Nanostructured silicon carbon thin films, composed of Si nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by varying rf power in ultra high vacuum plasma enhanced chemical vapour deposition system using silane and methane gas mixtures diluted in hydrogen. In this paper we have studied the compositional, structural and electrical properties of these films as a function of rf power. It is shown that with increasing rf power the atomic densities of carbon and hydrogen increase while the atomic density of silicon decreases, resulting in a reduction in the mass density. Further, it is demonstrated that carbon is incorporated into amorphous matrix and it is mainly bonded to silicon. The study has also revealed that the crystalline volume fraction decreases with increase in rf power and that the films deposited with low rf power have a size distribution of large and small crystallites while the films deposited with relatively high power have only small crystallites. Finally, the enhanced transport properties of the nanostructured silicon carbon films, as compared to amorphous counterpart, have been attributed to the presence of Si nanocrystallites. - Highlights: • The mass density of silicon carbon films decreases from 2.3 to 2 g/cm{sup 3}. • Carbon is incorporated in the amorphous phase and it is mainly bonded to silicon. • Nanostructured silicon carbon films are deposited at rf power > 40 W. • Si nanocrystallites in amorphous silicon carbon enhance the electrical properties.

  9. Wetting behaviour of carbon nitride nanostructures grown by plasma enhanced chemical vapour deposition technique

    Science.gov (United States)

    Ahmad Kamal, Shafarina Azlinda; Ritikos, Richard; Abdul Rahman, Saadah

    2015-02-01

    Tuning the wettability of various coating materials by simply controlling the deposition parameters is essential for various specific applications. In this work, carbon nitride (CNx) films were deposited on silicon (1 1 1) substrates using radio-frequency plasma enhanced chemical vapour deposition employing parallel plate electrode configuration. Effects of varying the electrode distance (DE) on the films' structure and bonding properties were investigated using Field emission scanning electron microscopy, Atomic force microscopy, Fourier transform infrared and X-ray photoemission spectroscopy. The wettability of the films was analyzed using water contact angle measurements. At high DE, the CNx films' surface was smooth and uniform. This changed into fibrous nanostructures when DE was decreased. Surface roughness of the films increased with this morphological transformation. Nitrogen incorporation increased with decrease in DE which manifested the increase in both relative intensities of Cdbnd N to Cdbnd C and Nsbnd H to Osbnd H bonds. sp2-C to sp3-C ratio increased as DE decreased due to greater deformation of sp2 bonded carbon at lower DE. The films' characteristics changed from hydrophilic to super-hydrophobic with the decrease in DE. Roughness ratio, surface porosity and surface energy calculated from contact angle measurements were strongly dependent on the morphology, surface roughness and bonding properties of the films.

  10. Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Peralvarez, M; Carreras, Josep; Navarro-Urrios, D; Lebour, Y; Garrido, B [MIND, IN2UB, Department of Electronics, University of Barcelona, C/Marti i Franques 1, PL2, E-08028 Barcelona (Spain); Barreto, J; DomInguez, C [IMB-CNM, CSIC, Bellaterra, E-08193 Barcelona (Spain); Morales, A, E-mail: mperalvarez@el.ub.e [INAOE, Electronics Department, Apartado 51, Puebla 72000 (Mexico)

    2009-10-07

    An in-depth study of the physical and electrical properties of Si-nanocrystal-based MOSLEDs is presented. The active layers were fabricated with different concentrations of Si by both ion implantation and plasma-enhanced chemical vapour deposition. Devices fabricated by ion implantation exhibit a combination of direct current and field-effect luminescence under a bipolar pulsed excitation. The onset of the emission decreases with the Si excess from 6 to 3 V. The direct current emission is attributed to impact ionization and is associated with the reasonably high current levels observed in current-voltage measurements. This behaviour is in good agreement with transmission electron microscopy images that revealed a continuous and uniform Si nanocrystal distribution. The emission power efficiency is relatively low, {approx}10{sup -3}%, and the emission intensity exhibits fast degradation rates, as revealed from accelerated ageing experiments. Devices fabricated by chemical deposition only exhibit field-effect luminescence, whose onset decreases with the Si excess from 20 to 6 V. The absence of the continuous emission is explained by the observation of a 5 nm region free of nanocrystals, which strongly reduces the direct current through the gate. The main benefit of having this nanocrystal-free region is that tunnelling current flow assisted by nanocrystals is blocked by the SiO{sub 2} stack so that power consumption is strongly reduced, which in return increases the device power efficiency up to 0.1%. In addition, the accelerated ageing studies reveal a 50% degradation rate reduction as compared to implanted structures.

  11. Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

    Science.gov (United States)

    Liu, A. Y.; Sun, C.; Markevich, V. P.; Peaker, A. R.; Murphy, J. D.; Macdonald, D.

    2016-11-01

    It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

  12. The Role of Plasma in Plasma Enhanced Chemical Vapour Deposition of Nanostructure Growth

    Science.gov (United States)

    Hash, David B.; Meyyappan, M.; Teo, Kenneth B. K.; Lacerda, Rodrigo G.; Rupesinghe, Nalin L.

    2004-01-01

    Chemical vapour deposition (CVD) has become the preferred process for high yield growth of carbon nanotubes and nanofibres because of its ability to pattern growth through lithographic positioning of transition metal catalysts on substrates. Many potential applications of nanotubes such as field emitters [1] require not only patterned growth but also vertical alignment. Some degree of ali,ment in thermal CVD processes can be obtained when carbon nanotubes are grown closely together as a result of van der Waals interactions. The ali,onment however is marginal, and the van der Waals prerequisite makes growth of freestanding nanofibres with thermal CVD unrealizable. The application of electric fields as a means of ali,onment has been shown to overcome this limitation [2-5], and highly aligned nanostructures can be grown if electric fields on the order of 0.5 V/microns are employed. Plasma enhanced CVD in various configurations including dc, rf, microwave, inductive and electron cyclotron resonance has been pursued as a means of enabling alignment in the CVD process. However, the sheath fields for the non-dc sources are in general not sufficient for a high degree of ali,pment and an additional dc bias is usually applied to the growth substrate. This begs the question as to the actual role of the plasma. It is clear that the plasma itself is not required for aligned growth as references [3] and [4] employed fields through small applied voltages (3-20 V) across very small electrode spacings (10-100 microns) and thus avoided striking a discharge.

  13. Room-Temperature Ferromagnetic ZnMnO Thin Films Synthesized by Plasma Enhanced Chemical Vapour Deposition Method

    Institute of Scientific and Technical Information of China (English)

    LIN Ying-Bin; ZHANG Feng-Ming; DU You-Wei; HUANG Zhi-Gao; ZHENG Jian-Guo; LU Zhi-Hai; ZOU Wen-Qin; LU Zhong-Lin; XU Jian-Ping; JI Jian-Ti; LIU Xing-Chong; WANG Jian-Feng; LV Li-Ya

    2007-01-01

    Room-temperature ferromagnetic Mn-doped ZnO films are grown on Si (001) substrates by plasma enhanced chemical vapour deposition (PECVD). X-ray diffraction measurements reveal that the Zn1-xMnxO films have the single-phase wurtzite structure. X-ray photoelectron spectroscopy indicates the existence of Mn2+ ions in Mndoped ZnO films. Furthermore, the decreasing additional Raman peak with increasing Mn-doping is considered to relate to the substitution of Mn ions for the Zn ions in ZnO lattice. Superconducting quantum interference device (SQUID) measurements demonstrate that Mn-doped ZnO films have ferromagnetic behaviour at room temperature.

  14. Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LU Wan-bing; YU Wei; WU Li-ping; CUI Shuang-kui; FU Guang-sheng

    2006-01-01

    Hydrogenated nanocrystalline silicon carbide (SiC) thin films were deposited on the single-crystal silicon substrate using the helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy (AFM), the Fourier transform infrared absorption (FTIR) and the transmission electron microscopy (TEM). The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmission electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC (approximately 5.4 nm), and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.

  15. SiC-Si[sub 3]N[sub 4] composite coatings produced by plasma-enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gerretsen, J. (Centre for Technical Ceramics, Netherlands Organization for Applied Scientific Research, Eindhoven (Netherlands)); Kirchner, G. (Centre for Technical Ceramics, Netherlands Organization for Applied Scientific Research, Eindhoven (Netherlands)); Kelly, T. (Irish Science and Technology Agency, Dublin (Ireland)); Mernagh, V. (Irish Science and Technology Agency, Dublin (Ireland)); Koekoek, R. (Tempress, Hoogeveen (Netherlands)); McDonnell, L. (Tekscan Ltd., Cork (Ireland))

    1993-10-08

    Silicon carbonitride coatings have been produced by plasma-enhanced chemical vapour deposition (CVD) on AISI 440C steel in a hot-wall reactor at 250 C from a mixture of SiH[sub 4], N[sub 2]-NH[sub 3] and C[sub 2]H[sub 4], and analysed by electron probe microanalysis and Rutherford backscattering spectroscopy-elastic recoil detection. Coatings with different ratios of silicon carbide to silicon nitride and silicon suband superstoichiometries have been deposited. Stoichiometric coatings show a maximum in their mechanical properties. Depending on the SiC-to-Si[sub 3]N[sub 4] ratio, the Knoop hardness values vary between 1500 and 2800 HK[sub 0.025]. Internal stress is low at a level of 100-300 MPa. The pinhole density is less than 2 cm[sup -2]. The fracture toughness as determined from indention tests is 4 MPa m[sup 1/2]. Linear polarization testing results show excellent protection of the substrate material against chemically aggressive media as compared with conventional CVD. (orig.)

  16. Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Zhang Hai-Long; Liu Feng-Zhen; Zhu Mei-Fang; Liu Jin-Long

    2012-01-01

    The influences of the plasma ignition condition in plasma enhanced chemical vapour deposition (PECVD) on the interfaces and the microstructures of hydrogenated microcrystalline Si (μc-Si:H) thin films are investigated.The plasma ignition condition is modified by varying the ratio of SiH4 to H2 (RH).For plasma ignited with a constant gas ratio,the time-resolved optical emission spectroscopy presents a low value of the emission intensity ratio of Hα to SiH(IHα/IsiH) at the initial stage,which leads to a thick amorphous incubation layer.For the ignition condition with a profiling RH,the higher IHα/IsiH values are realized.By optimizing the RH modulation,a uniform crystallinity along the growth direction and a denser μc-Si:H film can be obtained.However,an excessively high IHα/IsiH* may damage the interface properties,which is indicated by capacitance-voltage (C-V) measurements.Well controlling the ignition condition is critically important for the applications of Si thin films.

  17. Deposition and characterization of diamond-like nanocomposite coatings grown by plasma enhanced chemical vapour deposition over different substrate materials

    Indian Academy of Sciences (India)

    Awadesh Kr Mallik; Nanadadulal Dandapat; Prajit Ghosh; Utpal Ganguly; Sukhendu Jana; Sayan Das; Kaustav Guha; Garfield Rebello; Samir Kumar Lahiri; Someswar Datta

    2013-04-01

    Diamond-like nanocomposite (DLN) coatings have been deposited over different substrates used for biomedical applications by plasma-enhanced chemical vapour deposition (PECVD). DLN has an interconnecting network of amorphous hydrogenated carbon and quartz-like oxygenated silicon. Raman spectroscopy, Fourier transform–infra red (FT–IR) spectroscopy, transmission electron microscopy (TEM) and X-ray diffraction (XRD) have been used for structural characterization. Typical DLN growth rate is about 1 m/h, measured by stylus profilometer. Due to the presence of quartz-like Si:O in the structure, it is found to have very good adhesive property with all the substrates. The adhesion strength found to be as high as 0.6 N on SS 316 L steel substrates by scratch testing method. The Young’s modulus and hardness have found to be 132 GPa and 14.4 GPa, respectively. DLN coatings have wear factor in the order of 1 × 10-7 mm3/N-m. This coating has found to be compatible with all important biomedical substrate materials and has successfully been deposited over Co–Cr alloy based knee implant of complex shape.

  18. Bamboo and herringbone shaped carbon nanotubes and carbon nanofibres synthesized in direct current-plasma enhanced chemical vapour deposition.

    Science.gov (United States)

    Zhang, Lu; Chen, Li; Wells, Torquil; El-Gomati, Mohamed

    2009-07-01

    Carbon nanotubes with different structures were catalytically synthesized on Ni coated SiO2/Si substrate in a Direct Current Plasma Enhanced Chemical Vapour Deposition system, in which C2H2 acted as the carbon source and NH3 as the etchant gas. A Scanning Electron Microscope study showed that carbon nanotubes were all vertically aligned with respect to the substrate, with diameters ranging from 10 nm to 200 nm. Different sizes of Ni catalyst particles were observed on the tips of carbon nanotubes. Transmission Electron Microscopy was used to study the morphology of the grown tubes and the results obtained show that the diameters and structures of these carbon nanotubes were closely correlated to the sizes and structures of the Ni nanoparticles. Two main structures namely bamboo shaped carbon nanotubes and herringbone shaped carbon nanofibres were found on the same sample. It is suggested that by controlling the pre-growth condition, desired structure of carbon nanotubes or carbon nanofibres could be produced for practical applications.

  19. Catalytic Carbon Submicron Fabrication Using Home-Built Very-High Frequency Plasma Enhanced Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Sukirno

    2008-09-01

    Full Text Available In this research, carbon nanotubes (CNT fabrication is attempted by using existing home-made Plasma Enhanced Chemical Vapour Deposition (PECVD system. The fabrication is a catalytic growth process, which Fe catalyst thin film is grown on the Silicon substrate by using dc-Unbalanced Magnetron Sputtering method. By using methane (CH4 as the source of carbon and diluted silane (SiH4 in hydrogen as the source of hydrogen with 10:1 ratio, CNT fabrications have been attempted by using Very High Frequency PECVD (VHF-PECVD method. The fabrication processes are done at relatively low temperature, 250oC, but with higher operated plasma frequency, 70 MHz. Recently, it is also been attempted a fabrication process with only single gas source, but using one of the modification of the VHF-PECVD system, which is by adding hot-wire component. The attempt was done in higher growth temperature, 400oC. Morphological characterizations, by using Scanning Electron Micrograph (SEM and Scanning Probe Microscopy (SPM, as well as the composition characterization, by using Energy Dispersion Analysis by X-Ray (EDAX, show convincing results that there are some signatures of CNT present.

  20. Osteoconductive Potential of Barrier NanoSiO2 PLGA Membranes Functionalized by Plasma Enhanced Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Antonia Terriza

    2014-01-01

    Full Text Available The possibility of tailoring membrane surfaces with osteoconductive potential, in particular in biodegradable devices, to create modified biomaterials that stimulate osteoblast response should make them more suitable for clinical use, hopefully enhancing bone regeneration. Bioactive inorganic materials, such as silica, have been suggested to improve the bioactivity of synthetic biopolymers. An in vitro study on HOB human osteoblasts was performed to assess biocompatibility and bioactivity of SiO2 functionalized poly(lactide-co-glycolide (PLGA membranes, prior to clinical use. A 15 nm SiO2 layer was deposited by plasma enhanced chemical vapour deposition (PECVD, onto a resorbable PLGA membrane. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, and infrared spectroscopy (FT-IR. HOB cells were seeded on sterilized test surfaces where cell morphology, spreading, actin cytoskeletal organization, and focal adhesion expression were assessed. As proved by the FT-IR analysis of samples, the deposition by PECVD of the SiO2 onto the PLGA membrane did not alter the composition and other characteristics of the organic membrane. A temporal and spatial reorganization of cytoskeleton and focal adhesions and morphological changes in response to SiO2 nanolayer were identified in our model. The novedous SiO2 deposition method is compatible with the standard sterilization protocols and reveals as a valuable tool to increase bioactivity of resorbable PLGA membranes.

  1. Osteoconductive Potential of Barrier NanoSiO2 PLGA Membranes Functionalized by Plasma Enhanced Chemical Vapour Deposition

    Science.gov (United States)

    Terriza, Antonia; Vilches-Pérez, Jose I.; de la Orden, Emilio; Yubero, Francisco; Gonzalez-Caballero, Juan L.; González-Elipe, Agustin R.; Vilches, José; Salido, Mercedes

    2014-01-01

    The possibility of tailoring membrane surfaces with osteoconductive potential, in particular in biodegradable devices, to create modified biomaterials that stimulate osteoblast response should make them more suitable for clinical use, hopefully enhancing bone regeneration. Bioactive inorganic materials, such as silica, have been suggested to improve the bioactivity of synthetic biopolymers. An in vitro study on HOB human osteoblasts was performed to assess biocompatibility and bioactivity of SiO2 functionalized poly(lactide-co-glycolide) (PLGA) membranes, prior to clinical use. A 15 nm SiO2 layer was deposited by plasma enhanced chemical vapour deposition (PECVD), onto a resorbable PLGA membrane. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, and infrared spectroscopy (FT-IR). HOB cells were seeded on sterilized test surfaces where cell morphology, spreading, actin cytoskeletal organization, and focal adhesion expression were assessed. As proved by the FT-IR analysis of samples, the deposition by PECVD of the SiO2 onto the PLGA membrane did not alter the composition and other characteristics of the organic membrane. A temporal and spatial reorganization of cytoskeleton and focal adhesions and morphological changes in response to SiO2 nanolayer were identified in our model. The novedous SiO2 deposition method is compatible with the standard sterilization protocols and reveals as a valuable tool to increase bioactivity of resorbable PLGA membranes. PMID:24883304

  2. Mechanical alloying and sintering of aluminum reinforced with SiC nanopowders produced by plasma-enhanced chemical-vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Costa, J.; Fort, J.; Roura, P. [GRM, Dept. de Enginyeria Industrial, Universitat de Girona (Spain); Froyen, L. [MTM Katholieke Universiteit Leuven (Belgium); Viera, G.; Bertran, E. [FEMAN, Dept. Fisica Aplicada i Optica, Universitat de Barcelona (Spain)

    2000-07-01

    Nanometric powders of stoichiometric SiC have been synthesised by plasma-enhanced chemical-vapour deposition. These are constituted by amorphous particles with diameters ranging from 10 to 100 nm. Due to their high hydrogen content, a heat treatment at 900 C was needed to prevent spontaneous oxidation. The stabilized SiC powder was mechanically alloyed with aluminum particles of 40 {mu}m in diameter and the alloy was formed by hot isostatic sintering. The SiC content ranged from 0 to 5% in weight. A detailed analysis of the alloyed powder microstructure is presented as well as preliminary results concerning the mechanical properties after sintering. (orig.)

  3. Study of barrier properties and chemical resistance of recycled PET coated with amorphous carbon through a plasma enhanced chemical vapour deposition (PECVD) process.

    Science.gov (United States)

    Cruz, S A; Zanin, M; Nerin, C; De Moraes, M A B

    2006-01-01

    Many studies have been carried out in order to make bottle-to-bottle recycling feasible. The problem is that residual contaminants in recycled plastic intended for food packaging could be a risk to public health. One option is to use a layer of virgin material, named functional barrier, which prevents the contaminants migration process. This paper shows the feasibility of using polyethylene terephthalate (PET) recycled for food packaging employing a functional barrier made from hydrogen amorphous carbon film deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) process. PET samples were deliberately contaminated with a series of surrogates using a FDA protocol. After that, PET samples were coated with approximately 600 and 1200 Angstrons thickness of amorphous carbon film. Then, the migration tests using as food simulants: water, 10% ethanol, 3% acetic acid, and isooctane were applied to the sample in order to check the chemical resistance of the new coated material. After the tests, the liquid extracts were analysed using a solid-phase microextraction device (SPME) coupled to GC-MS.

  4. Effects of boron addition on a-Si90Ge10:H films obtained by low frequency plasma enhanced chemical vapour deposition

    Science.gov (United States)

    Pérez, Arllene M.; Renero, Francisco J.; Zúñiga, Carlos; Torres, Alfonso; Santiago, César

    2005-06-01

    Optical, structural and electric properties of (a-(Si90Ge10)1-yBy:H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10-3 to 101 Ω-1 cm-1 when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV.

  5. Intertwisted fibrillar diamond-like carbon films prepared by electron cyclotron resonance microwave plasma enhanced chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    杨武保; 王久丽; 张谷令; 范松华; 刘赤子; 杨思泽

    2003-01-01

    In this paper, the structures, optical and mechanical properties of diamond-like carbon films are studied, which are prepared by a self-fabricated electron cyclotron resonance microwave plasma chemical vapour deposition method at room temperature in the ambient gases of mixed acetylene and nitrogen. The morphology and microstructure of the processed film are characterized by the atomic force microscope image, Raman spectra and middle Fourier transform infrared transmittance spectra, which reveal that there is an intertwisted fibrillar diamond-like structure in the film and the film is mainly composed of sp3 CH, sp3 C-C, sp2 C=C, C=N and C60. The film micro-hardness and bulk modulus are measured by a nano-indenter and the refractive constant and deposition rate are also calculated.

  6. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

  7. Effects of boron addition on a-Si{sub 90}Ge{sub 10}:H films obtained by low frequency plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Perez, Arllene M [Instituto Nacional de Astrofisica, Optica y Electronica (INAOE), Luis E Erro no. 1, Santa Maria Tonantzintla, CP 72840, Puebla, Puebla (Mexico); Universidad Popular Autonoma del Estado de Puebla (UPAEP), 21 Sur 1103 Colonia Santiago, CP 72160, Puebla, Puebla (Mexico); Renero, Francisco J [Instituto Nacional de Astrofisica, Optica y Electronica (INAOE), Luis E Erro no. 1, Santa Maria Tonantzintla, CP 72840, Puebla, Puebla (Mexico); Zuniga, Carlos [Instituto Nacional de AstrofIsica, Optica y Electronica (INAOE), Luis E Erro no. 1, Santa MarIa Tonantzintla, CP 72840, Puebla, Puebla (Mexico); Torres, Alfonso [Instituto Nacional de Astrofisica, Optica y Electronica (INAOE), Luis E Erro no. 1, Santa MarIa Tonantzintla, CP 72840, Puebla, Puebla (Mexico); Santiago, Cesar [Universidad Politecnica de Tulancingo, Prolongacion Guerrero 808 Colonia Caltengo, CP 43626, Tulancingo, Hidalgo (Mexico)

    2005-06-29

    Optical, structural and electric properties of (a-(Si{sub 90}Ge{sub 10}){sub 1-y}B{sub y}:H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10{sup -3} to 10{sup 1} {omega}{sup -1} cm{sup -1} when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV.

  8. Effects of annealing temperature on crystallisation kinetics and properties of polycrystalline Si thin films and solar cells on glass fabricated by plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tao Yuguo, E-mail: yuguo.tao@hotmail.com [Photovoltaics Centre of Excellence, University of New South Wales, Sydney NSW 2052 (Australia); Varlamov, Sergey; Jin, Guangyao [Photovoltaics Centre of Excellence, University of New South Wales, Sydney NSW 2052 (Australia); Wolf, Michael; Egan, Renate [CSG Solar Pty Ltd, Sydney, NSW (Australia)

    2011-10-31

    Solid-phase crystallisation of Si thin films on glass fabricated by plasma enhanced chemical vapour deposition is compared at different annealing temperatures. Four independent techniques, optical transmission microscopy, Raman and UV reflectance spectroscopy, and X-ray diffraction, are used to characterise the crystallisation kinetics and film properties. The 1.5 {mu}m thick films with the n+/p-/p+ solar cell structure have incubation times of about 300, 53, and 14 min and full crystallisation times of about 855, 128, and 30 min at 600 deg. C, 640 deg. C, and 680 deg. C respectively. Estimated activation energies for incubation and crystal growth are 2.7 and 3.2 eV respectively. The average grain size in the resulting polycrystalline Si films measured from scanning electron microscopy images gradually decreases with a higher annealing temperature and the crystal quality becomes poorer according to the Raman, UV reflection, and X-ray diffraction results. The dopant activation and majority carrier mobilities in heavily doped n+ and p+ layers are similar for all crystallisation temperatures. Both the open-circuit voltage and the spectral response are lower for the cells crystallised at higher temperatures and the minority carrier diffusion lengths are shorter accordingly although they are still longer than the cell thickness for all annealing temperatures. The results indicate that shortening the crystallisation time by merely increasing the crystallisation temperature offers little or no merits for PECVD polycrystalline Si thin-film solar cells on glass.

  9. Thermal Modification of a-SiC:H Films Deposited by Plasma Enhanced Chemical Vapour Deposition from CH4+SiH4 Mixtures

    Institute of Scientific and Technical Information of China (English)

    刘玉学; 王宁会; 刘益春; 申德振; 范希武; 李灵燮

    2001-01-01

    The effects of thermal annealing on photoluminescence (PL) and structural properties of a-Si1-xCx :H films deposited by plasma enhanced chemical vapour deposition from CH4+SiH4 mixtures are studied by using infrared, PL and transmittance-reflectance spectra. In a-SiC:H network, high-temperature annealing gives rise to the effusion of hydrogen from strongly bonded hydrogen in SiH, SiH2, (SiH2)n, SiCHn and CHn configurations and the break of weak C-C, Si-Si and C-Si bonds. A structural rearrangement will occur, which causes a significant correlation of the position and intensity of the PL signal with the annealing temperature. The redshift of the PL peak is related to the destruction of the confining power of barriers. However, the PL intensity does not have a significant correlation with the annealing temperature for a C-rich a-SiC:H network, which refers to the formation of π-bond cluster as increasing carbon content. It is indicated that the thermal stability of C-rich a-Si1-xCx:H films is better than that of Si-like a-Si1-xCx :H films.

  10. Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

    Science.gov (United States)

    Hu, Wen-Juan; Xie, Fen-Yan; Chen, Qiang; Weng, Jing

    2008-10-01

    We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C-O-C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C-O-C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films.

  11. Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

    Institute of Scientific and Technical Information of China (English)

    HU Wen-Juan; XIE Fen-Yan; CHEN Qiang; WENG Jing

    2008-01-01

    We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C-O-C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C-O-C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films.

  12. Nanocrystalline silicon and silicon quantum dots formation within amorphous silicon carbide by plasma enhanced chemical vapour deposition method controlling the Argon dilution of the process gases

    Energy Technology Data Exchange (ETDEWEB)

    Kole, Arindam; Chaudhuri, Partha, E-mail: erpc@iacs.res.in

    2012-11-01

    Structural and optical properties of the amorphous silicon carbide (a-SiC:H) thin films deposited by radio frequency plasma enhanced chemical vapour deposition method from a mixture of silane (SiH{sub 4}) and methane (CH{sub 4}) diluted in argon (Ar) have been studied with variation of Ar dilution from 94% to 98.4%. It is observed that nanocrystalline silicon starts to form within the a-SiC:H matrix by increasing the dilution to 96%. With further increase in Ar dilution to 98% formation of the silicon nanocrystals (nc-Si) with variable size is enhanced. The optical band gap (E{sub g}) of the a-SiC:H film decreases from 2.0 eV to 1.9 eV with increase in Ar dilution from 96% to 98% as the a-SiC:H films gradually become Si rich. On increasing the Ar dilution further to 98.4% leads to the appearance of crystalline silicon quantum dots (c-Si q-dots) of nearly uniform size of 3.5 nm. The quantum confinement effect is apparent from the sharp increase in the E{sub g} value to 2.6 eV. The phase transformation phenomenon from nc-Si within the a-SiC:H films to Si q-dot were further studied by high resolution transmission electron microscopy and the grazing angle X-ray diffraction spectra. A relaxation in the lattice strain has been observed with the formation of Si q-dots.

  13. Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?

    Energy Technology Data Exchange (ETDEWEB)

    Podhorodecki, A., E-mail: artur.p.podhorodecki@pwr.wroc.pl; Golacki, L. W.; Zatryb, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Wang, J.; Jadwisienczak, W. [School of EECS, Ohio University, Stocker Center 363, Athens, Ohio 45701 (United States); Fedus, K. [Institute of Physics, Nicholas Copernicus University, Grudziadzka 5/7, 87-100 Torun (Poland); Wojcik, J.; Wilson, P. R. J.; Mascher, P. [Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, 1280 Main St. W, Hamilton, Ontario L8S4L7 (Canada)

    2014-04-14

    In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.

  14. Influence of hydrogen dilution on structural, electrical and optical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films prepared by plasma enhanced chemical vapour deposition (PE-CVD)

    Energy Technology Data Exchange (ETDEWEB)

    Funde, A.M.; Bakr, Nabeel Ali; Kamble, D.K. [School of Energy Studies, University of Pune, Pune 411 007 (India); Hawaldar, R.R.; Amalnerkar, D.P. [Center for Materials for Electronics Technology (C-MET), Panchawati, Pune 411 008 (India); Jadkar, S.R. [Department of Physics, University of Pune, Ganeshkhind Road, Pune 411 007 (India)

    2008-10-15

    Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited from pure silane (SiH{sub 4}) and hydrogen (H{sub 2}) gas mixture by conventional plasma enhanced chemical vapour deposition (PE-CVD) method at low temperature (200 C) using high rf power. The structural, optical and electrical properties of these films are carefully and systematically investigated as a function of hydrogen dilution of silane (R). Characterization of these films with low angle X-ray diffraction and Raman spectroscopy revealed that the crystallite size in the films tends to decrease and at same time the volume fraction of crystallites increases with increase in R. The Fourier transform infrared (FTIR) spectroscopic analysis showed at low values of R, the hydrogen is predominantly incorporated in the nc-Si:H films in the mono-hydrogen (Si-H) bonding configuration. However, with increasing R the hydrogen bonding in nc-Si:H films shifts from mono-hydrogen (Si-H) to di-hydrogen (Si-H{sub 2}) and (Si-H{sub 2}){sub n} complexes. The hydrogen content in the nc-Si:H films decreases with increase in R and was found less than 10 at% over the entire studied range of R. On the other hand, the Tauc's optical band gap remains as high as 2 eV or much higher. The quantum size effect may responsible for higher band gap in nc-Si:H films. A correlation between electrical and structural properties has been found. For optimized deposition conditions, nc-Si:H films with crystallite size {proportional_to}7.67 nm having good degree of crystallinity ({proportional_to}84%) and high band gap (2.25 eV) were obtained with a low hydrogen content (6.5 at%). However, for these optimized conditions, the deposition rate was quite small (1.6 Aa/s). (author)

  15. Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects

    Directory of Open Access Journals (Sweden)

    Hideharu Shimizu, Shuji Nagano, Akira Uedono, Nobuo Tajima, Takeshi Momose and Yukihiro Shimogaki

    2013-01-01

    Full Text Available Cap layers for Cu interconnects in ultra-large-scale integrated devices (ULSIs, with a low dielectric constant (k-value and strong barrier properties against Cu and moisture diffusion, are required for the future further scaling of ULSIs. There is a trade-off, however, between reducing the k-value and maintaining strong barrier properties. Using quantum mechanical simulations and other theoretical computations, we have designed ideal dielectrics: SiCH films with Si–C2H4–Si networks. Such films were estimated to have low porosity and low k; thus they are the key to realizing a cap layer with a low k and strong barrier properties against diffusion. For fabricating these ideal SiCH films, we designed four novel precursors: isobutyl trimethylsilane, diisobutyl dimethylsilane, 1, 1-divinylsilacyclopentane and 5-silaspiro [4,4] noname, based on quantum chemical calculations, because such fabrication is difficult by controlling only the process conditions in plasma-enhanced chemical vapor deposition (PECVD using conventional precursors. We demonstrated that SiCH films prepared using these newly designed precursors had large amounts of Si–C2H4–Si networks and strong barrier properties. The pore structure of these films was then analyzed by positron annihilation spectroscopy, revealing that these SiCH films actually had low porosity, as we designed. These results validate our material and precursor design concepts for developing a PECVD process capable of fabricating a low-k cap layer.

  16. The study and the realization of radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique; Etude et realisation de detecteurs de rayonnements a base de films de diamant polycristallin elabores par depot chimique en phase vapeur assiste par plasma micro-onde

    Energy Technology Data Exchange (ETDEWEB)

    Jany, Ch

    1998-10-29

    The aim of this work was to develop radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique. The influence of surface treatments, contact technology and diamond growth parameters on the diamond detectors characteristics was investigated in order to optimise the detector response to alpha particles. The first part of the study focused on the electrical behaviour of as-deposited diamond surface, showing a p type conduction and its influence on the leakage current of the device. A surface preparation process was established in order to reduce the leakage current of the device by surface dehydrogenation using an oxidising step. Several methods to form and treat electrical contacts were also investigated showing that the collection efficiency of the device decreases after contact annealing. In the second part, we reported the influence of the diamond deposition parameters on the characteristics of the detectors. The increase of the deposition temperature and/or methane concentration was shown to lead {eta} to decrease. In contrast, {eta} was found to increase with the micro-wave power. The evolution of the diamond detector characteristics results from the variation in sp{sup 2} phases incorporation and in the crystallography quality of the films. These defects increase the leakage current and reduce the carrier mobility and lifetime. Measurements carried out on detectors with different thicknesses showed that the physical properties varies along the growth direction, improving with the film thickness. Finally, the addition of nitrogen (> 10 ppm) in the gas mixture during diamond deposition was found to strongly reduce the collection efficiency of the detectors. To conclude the study, we fabricated and characterised diamond devices which were used for thermal neutron detection and for the intensity and shape measurement of VUV and soft X-ray pulses. (author)

  17. Autonomous Chemical Vapour Detection by Micro UAV

    Directory of Open Access Journals (Sweden)

    Kent Rosser

    2015-12-01

    Full Text Available The ability to remotely detect and map chemical vapour clouds in open air environments is a topic of significant interest to both defence and civilian communities. In this study, we integrate a prototype miniature colorimetric chemical sensor developed for methyl salicylate (MeS, as a model chemical vapour, into a micro unmanned aerial vehicle (UAV, and perform flights through a raised MeS vapour cloud. Our results show that that the system is capable of detecting MeS vapours at low ppm concentration in real-time flight and rapidly sending this information to users by on-board telemetry. Further, the results also indicate that the sensor is capable of distinguishing “clean” air from “dirty”, multiple times per flight, allowing us to look towards autonomous cloud mapping and source localization applications. Further development will focus on a broader range of integrated sensors, increased autonomy of detection and improved engineering of the system.

  18. Review: Plasma-enhanced chemical vapor deposition of nanocrystalline diamond

    Directory of Open Access Journals (Sweden)

    Katsuyuki Okada

    2007-01-01

    Full Text Available Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles of 200–700 nm diameter have been prepared in a 13.56 MHz low-pressure inductively coupled CH4/CO/H2 plasma. The bonding state of carbon atoms was investigated by ultraviolet-excited Raman spectroscopy. Electron energy loss spectroscopy identified sp2-bonded carbons around the 20–50 nm subgrains of nanocrystalline diamond particles. Plasma diagnostics using a Langmuir probe and the comparison with plasma simulation are also reviewed. The electron energy distribution functions are discussed by considering different inelastic interaction channels between electrons and heavy particles in a molecular CH4/H2 plasma.

  19. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NARCIS (Netherlands)

    Konakov, S.A.; Krzhizhanovskaya, V.V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics.

  20. Plasma-enhanced Chemical Vapor Deposition of Aluminum Oxide Using Ultrashort Precursor Injection Pulses

    NARCIS (Netherlands)

    Dingemans, G.; M. C. M. van de Sanden,; Kessels, W. M. M.

    2012-01-01

    An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the precurs

  1. Simulation of low-temperature, atmospheric-pressure plasma enhanced chemical vapor deposition reactors

    OpenAIRE

    Lorant, Christophe; Descamps, Pierre; De Wilde, Juray; 1st BeLux workshop on “Coating, Materials, surfaces and Interfaces

    2014-01-01

    The simulation of low-temperature, atmospheric-pressure plasma enhanced chemical vapor deposition reactors is challenging due to the coupling of the fluid dynamics, the chemical reactions and the electric field and the stiffness of the resulting mathematical system. The model equations and the rigorous model reduction to reduce the stiffness are addressed in this paper. Considering pure nitrogen plasma, simulations with two configurations are discussed.

  2. Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

    Science.gov (United States)

    Cappelli, Mark A.

    1999-01-01

    In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species

  3. Plasma-Enhanced Chemical Vapor Deposition as a Method for the Deposition of Peptide Nanotubes

    Science.gov (United States)

    2013-09-17

    peptide nanotubes, plasma-enhanced chemical vapor deposition, nano assembly 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18...Using physical vapor deposition ( PVD ) well-ordered assemblies of peptide nanotubes (PNTs) composed of dipeptide subunits are obtained on various...for the deposition of thin films (Figure 1b). A. B. Figure 1. (a) Illustration of physical vapor deposition ( PVD ) process of diphenylalanine

  4. Oxygen Barrier Coating Deposited by Novel Plasma-enhanced Chemical Vapor Deposition

    DEFF Research Database (Denmark)

    Jiang, Juan; Benter, M.; Taboryski, Rafael Jozef

    2010-01-01

    We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source. This confi......, and it increased the barrier property of the modified low-density polyethylene, polyethylene terephthalate, and polylactide by 96.48%, 99.69%, and 99.25%, respectively....

  5. Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Zhan, Hualin; Garrett, David J.; Apollo, Nicholas V.; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

    2016-01-01

    High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm3, were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail.

  6. Studies on non-oxide coating on carbon fibers using plasma enhanced chemical vapor deposition technique

    Science.gov (United States)

    Patel, R. H.; Sharma, S.; Prajapati, K. K.; Vyas, M. M.; Batra, N. M.

    2016-05-01

    A new way of improving the oxidative behavior of carbon fibers coated with SiC through Plasma Enhanced Chemical Vapor Deposition technique. The complete study includes coating of SiC on glass slab and Stainless steel specimen as a starting test subjects but the major focus was to increase the oxidation temperature of carbon fibers by PECVD technique. This method uses relatively lower substrate temperature and guarantees better stoichiometry than other coating methods and hence the substrate shows higher resistance towards mechanical and thermal stresses along with increase in oxidation temperature.

  7. Synthesis of carbon nanotube array using corona discharge plasma-enhanced chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    A corona discharge plasma-enhanced chemical vapor deposition with the features of atmospheric pressure and low temperature has been developed to synthesize the carbon nanotube array. The array was synthesized from methane and hydrogen mixture in anodic aluminum oxide template channels in that cobalt was electrodeposited at the bottom. The characterization results by the scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy and Raman spectroscopy indicate that the array consists of carbon nanotubes with the diameter of about 40 nm and the length of more than 4 -m, and the carbon nanotubes are mainly restrained within the channels of templates.

  8. Chemical Structure of Carbon Nitride Films Prepared by MW-ECR Plasma Enhanced Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    XUJun,GAOPeng; DINGWan-yu; LIXin; DENGXin-lu; DONGChuang

    2004-01-01

    Amorphous carbon nitride thin films were prepared by plasma-enhanced DC magnetron sputtering using twinned microwave electron cyclotron resonance plasma sources. Chemical structure of deposited films was investigated using X-ray photoelectron spectroscopy and Fourier transtorm infrared spectroscopy. The results indicate that the deposition rate is strongly affected by direct current bias, and the films are mainly composed of a single amorphous carbon nitride phase with N/C ratio close to C3N4, and the bonding is predominantly of C-N type.

  9. Electroluminescence and photoluminescence of conjugated polymer films prepared by plasma enhanced chemical vapor deposition of naphthalene

    CERN Document Server

    Rajabi, Mojtaaba; Firouzjah, Marzieh Abbasi; Hosseini, Seyed Iman; Shokri, Babak

    2012-01-01

    Polymer light-emitting devices were fabricated utilizing plasma polymerized thin films as emissive layers. These conjugated polymer films were prepared by RF Plasma Enhanced Chemical Vapor Deposition (PECVD) using naphthalene as monomer. The effect of different applied powers on the chemical structure and optical properties of the conjugated polymers was investigated. The fabricated devices with structure of ITO/PEDOT:PSS/ plasma polymerized Naphthalene/Alq3/Al showed broadband Electroluminescence (EL) emission peaks with center at 535-550 nm. Using different structural and optical tests, connection between polymers chemical structure and optical properties under different plasma powers has been studied. Fourier transform infrared (FTIR) and Raman spectroscopies confirmed that a conjugated polymer film with a 3-D cross-linked network was developed. By increasing the power, products tended to form as highly cross-linked polymer films. Photoluminescence (PL) spectra of plasma polymers showed different excimerc ...

  10. High quality plasma-enhanced chemical vapor deposited silicon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Cotler, T.J.; Chapple-Sokol, J. (IBM General Technology Division, Hopewell Junction, NY (United States))

    1993-07-01

    The qualities of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films can be improved by increasing the deposition temperature. This report compares PECVD silicon nitride films to low pressure chemical vapor deposited (LPCVD) films. The dependence of the film properties on process parameters, specifically power and temperature, are investigated. The stress is shown to shift from tensile to compressive with increasing temperature and power. The deposition rate, uniformity, wet etch rate, index of refraction, composition, stress, hydrogen content, and conformality are considered to evaluate the film properties. Temperature affects the hydrogen content in the films by causing decreased incorporation of N-H containing species whereas the dependence on power is due to changes in the gas-phase precursors. All PECVD film properties, with the exception of conformality, are comparable to those of LPCVD films.

  11. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    Science.gov (United States)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics. The PECVD technology is inherently multiscale, from macroscale processes in the chemical reactor to atomic-scale surface chemistry. Our macroscale model is based on Navier-Stokes equations for a transient laminar flow of a compressible chemically reacting gas mixture, together with the mass transfer and energy balance equations, Poisson equation for electric potential, electrons and ions balance equations. The chemical kinetics model includes 24 species and 58 reactions: 37 in the gas phase and 21 on the surface. A deposition model consists of three stages: adsorption to the surface, diffusion along the surface and embedding of products into the substrate. A new model has been validated on experimental results obtained with the "Plasmalab System 100" reactor. We present the mathematical model and simulation results investigating the influence of flow rate and source gas proportion on silicon nitride film growth rate and chemical composition.

  12. Structural and optical studies on hot wire chemical vapour deposited hydrogenated silicon films at low substrate temperature

    Energy Technology Data Exchange (ETDEWEB)

    Gogoi, Purabi; Agarwal, Pratima [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781 039, Assam (India)

    2009-02-15

    Thin films of hydrogenated silicon are deposited by hot wire chemical vapour deposition technique, as an alternative of plasma enhanced chemical vapour deposition technique. By varying the hydrogen and silane flow rate, we deposited the films ranging from pure amorphous to nanocrystallite-embedded amorphous in nature. In this paper we report extensively studied structural and optical properties of these films. It is observed that the rms bond angle deviation decreases with increase in hydrogen flow rate, which is an indication of improved order in the films. We discuss this under the light of breaking of weak Si-Si bonds and subsequent formation of strong Si-Si bonds and coverage of the growing surface by atomic hydrogen. (author)

  13. MICROSTRUCTURE OF SiOx:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

    Institute of Scientific and Technical Information of China (English)

    MA ZHI-XUN; LIAO XIAN-BO; KONG GUANG-LIN; CHU JUN-HAO

    2000-01-01

    The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiOx:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx :H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO2 and HSi-O3. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.

  14. Deposition of electrochromic tungsten oxide thin films by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Henley, W.B.; Sacks, G.J. [Univ. of South Florida, Tampa, FL (United States). Center of Microelectronics

    1997-03-01

    Use of plasma-enhanced chemical vapor deposition (PECVD) for electrochromic WO{sub 3} film deposition is investigated. Oxygen, hydrogen, and tungsten hexafluoride were used as source gases. Reactant gas flow was investigated to determine the effect on film characteristics. High quality optical films were obtained at deposition rates on the order of 100 {angstrom}/s. Higher deposition rates were attainable but film quality and optical coherence degraded. Atomic emission spectroscopy (AES), was used to provide an in situ assessment of the plasma deposition chemistry. Through AES, it is shown that the hydrogen gas flow is essential to the deposition of the WO{sub 3} film. Oxygen gas flow and tungsten hexafluoride gas flow must be approximately equal for high quality films.

  15. Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

    Science.gov (United States)

    Lupina, G.; Strobel, C.; Dabrowski, J.; Lippert, G.; Kitzmann, J.; Krause, H. M.; Wenger, Ch.; Lukosius, M.; Wolff, A.; Albert, M.; Bartha, J. W.

    2016-05-01

    Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide conformal coating of graphene with Si layers as thin as 20 nm without any additional seed layer. The RF plasma process results in amorphization of the graphene layer. In contrast, the VHF process keeps the high crystalline quality of the graphene layer almost intact. Correlation analysis of Raman 2D and G band positions indicates that Si deposition induces reduction of the initial doping in graphene and an increase of compressive strain. Upon rapid thermal annealing, the amorphous Si layer undergoes dehydrogenation and transformation into a polycrystalline film, whereby a high crystalline quality of graphene is preserved.

  16. Surface modification of silicon-containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Jin, Yoonyoung; Desta, Yohannes; Goettert, Jost; Lee, G. S.; Ajmera, P. K.

    2005-07-01

    Surface modification of silicon-containing fluorocarbon (SiCF) films achieved by wet chemical treatments and through x-ray irradiation is examined. The SiCF films were prepared by plasma-enhanced chemical vapor deposition, using gas precursors of tetrafluoromethane and disilane. As-deposited SiCF film composition was analyzed by x-ray photoelectron spectroscopy. Surface modification of SiCF films utilizing n-lithiodiaminoethane wet chemical treatment is discussed. Sessile water-drop contact angle changed from 95°+/-2° before treatment to 32°+/-2° after treatment, indicating a change in the film surface characteristics from hydrophobic to hydrophilic. For x-ray irradiation on the SiCF film with a dose of 27.4 kJ/cm3, the contact angle of the sessile water drop changed from 95°+/-2° before radiation to 39°+/-3° after x-ray exposure. The effect of x-ray exposure on chemical bond structure of SiCF films is studied using Fourier transform infrared measurements. Electroless Cu deposition was performed to test the applicability of the surface modified films. The x-ray irradiation method offers a unique advantage in making possible surface modification in a localized area of high-aspect-ratio microstructures. Fabrication of a Ti-membrane x-ray mask is introduced here for selective surface modification using x-ray irradiation.

  17. Plasma-enhanced chemical vapor deposited silicon oxynitride films for optical waveguide bridges for use in mechanical sensors

    DEFF Research Database (Denmark)

    Storgaard-Larsen, Torben; Leistiko, Otto

    1997-01-01

    In this paper the influence of RF power, ammonia flow, annealing temperature, and annealing time on the optical and mechanical properties of plasma-enhanced chemically vapor deposited silicon oxynitride films, is presented. A low refractive index (1.47 to 1.48) film having tensile stress has been...

  18. Plasma Enhanced Chemical Vapor Deposition Nanocrystalline Tungsten Carbide Thin Film and Its Electro-catalytic Activity

    Institute of Scientific and Technical Information of China (English)

    Huajun ZHENG; Chunan MA; Jianguo HUANG; Guohua LI

    2005-01-01

    Nanocrystalline tungsten carbide thin films were fabricated on graphite substrates by plasma enhanced chemical vapor deposition (PECVD) at H2 and Ar atmosphere, using WF6 and CH4 as precursors. The crystal phase, structure and chemical components of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive spectrometer (EDS), respectively. The results show that the film prepared at CH4/WF6concentration ratio of 20 and at 800℃ is composed of spherical particles with a diameter of 20~35 nm. Electrochemical investigations show that the electrochemical real surface area of electrode of the film is large, and the electrode of the film exhibits higher electro-catalytic activity in the reaction of methanol oxidation. The designated constant current of the film catalyst is 123.6 mA/cm2 in the mixture solution of H2SO4 and CH3OH at the concentration of 0.5 and 2.0 mol/L at 70℃, and the designated constant potential is only 0.306 V (vs SCE).

  19. Control of interface nanoscale structure created by plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Peri, Someswara R; Akgun, Bulent; Satija, Sushil K; Jiang, Hao; Enlow, Jesse; Bunning, Timothy J; Foster, Mark D

    2011-09-01

    Tailoring the structure of films deposited by plasma-enhanced chemical vapor deposition (PECVD) to specific applications requires a depth-resolved understanding of how the interface structures in such films are impacted by variations in deposition parameters such as feed position and plasma power. Analysis of complementary X-ray and neutron reflectivity (XR, NR) data provide a rich picture of changes in structure with feed position and plasma power, with those changes resolved on the nanoscale. For plasma-polymerized octafluorocyclobutane (PP-OFCB) films, a region of distinct chemical composition and lower cross-link density is found at the substrate interface for the range of processing conditions studied and a surface layer of lower cross-link density also appears when plasma power exceeds 40 W. Varying the distance of the feed from the plasma impacts the degree of cross-linking in the film center, thickness of the surface layer, and thickness of the transition region at the substrate. Deposition at the highest power, 65 W, both enhances cross-linking and creates loose fragments with fluorine content higher than the average. The thickness of the low cross-link density region at the air interface plays an important role in determining the width of the interface built with a layer subsequently deposited atop the first.

  20. Plasma-enhanced microwave solid-state synthesis of cadmium sulfide: reaction mechanism and optical properties.

    Science.gov (United States)

    Du, Ke-zhao; Chaturvedi, Apoorva; Wang, Xing-zhi; Zhao, Yi; Zhang, Ke-ke; Iqbal Bakti Utama, M; Hu, Peng; Jiang, Hui; Xiong, Qi-hua; Kloc, Christian

    2015-08-14

    CdS synthesis by plasma-enhanced microwave physical vapor transport (PMPVT) has been developed in this work. The photoluminescence (PL), absorbance, Raman spectra and the mechanism of CdS crystal growth have been investigated. Furthermore, plasma-enhanced microwave chemical vapour transport (PMCVT) synthesis of CdS with additional chemical transport agents has been explored. In addition, other II-VI chalcogenides were also synthesized by PMPVT.

  1. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Santra, T. S.; Liu, C. H.; Bhattacharyya, T. K.; Patel, P.; Barik, T. K.

    2010-06-01

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of CC, CH, SiC, and SiH bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio ID/IG. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  2. Electrical transport properties of graphene nanowalls grown at low temperature using plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Zhao, Rong; Ahktar, Meysam; Alruqi, Adel; Dharmasena, Ruchira; Jasinski, Jacek B.; Thantirige, Rukshan M.; Sumanasekera, Gamini U.

    2017-05-01

    In this work, we report the electrical transport properties of uniform and vertically oriented graphene (graphene nanowalls) directly synthesized on multiple substrates including glass, Si/SiO2 wafers, and copper foils using radio-frequency plasma enhanced chemical vapor deposition (PECVD) with methane (CH4) as the precursor at relatively low temperatures. The temperature for optimum growth was established with the aid of transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy. This approach offers means for low-cost graphene nanowalls growth on an arbitrary substrate with the added advantage of transfer-free device fabrication. The temperature dependence of the electrical transport properties (resistivity and thermopower) were studied in the temperature range, 30-300 K and analyzed with a combination of 2D-variable range hopping (VRH) and thermally activated (TA) conduction mechanisms. An anomalous temperature dependence of the thermopower was observed for all the samples and explained with a combination of a diffusion term having a linear temperature dependence plus a term with an inverse temperature dependence.

  3. FTIR Characterization of Fluorine Doped Silicon Dioxide Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Peng-Fei; DING Shi-Jin; ZHANG Wei; ZHANG Jian-Yun; WANGJi-Tao; WEI William Lee

    2000-01-01

    Fluorine doped silicon dioxide (SiOF) thin films have been prepared by plasma enhanced chemical vapor depo sition. The Fourier transform infrared spectrometry (FTIR) spectra of SiOF films are deliberated to reveal the structure change of SiO2 and the mechanism of dielectric constant reduction after doping fluorine. When F is doped in SiO2 films, the Si-O stretching absorption peak will have a blue-shift due to increase of the partial charge of the O atom. The FTIR spectra indicate that some Si-OH components in the thin film can be removed after doping fluorine. These changes reduce the ionic and orientational polarization, and result in the reduction in dielectric constant of the film. According to Gaussian fitting, it is found that the Si-F2 bonds will appear in the SiOF film with increase of the fluorine content. The Si-F2 structures are liable to react with water, and cause the same increase of absorbed moisture in the film.

  4. Chain Assemblies from Nanoparticles Synthesized by Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition: The Computational View.

    Science.gov (United States)

    Mishin, Maxim V; Zamotin, Kirill Y; Protopopova, Vera S; Alexandrov, Sergey E

    2015-12-01

    This article refers to the computational study of nanoparticle self-organization on the solid-state substrate surface with consideration of the experimental results, when nanoparticles were synthesised during atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD). The experimental study of silicon dioxide nanoparticle synthesis by AP-PECVD demonstrated that all deposit volume consists of tangled chains of nanoparticles. In certain cases, micron-sized fractals are formed from tangled chains due to deposit rearrangement. This work is focused on the study of tangled chain formation only. In order to reveal their formation mechanism, a physico-mathematical model was developed. The suggested model was based on the motion equation solution for charged and neutral nanoparticles in the potential fields with the use of the empirical interaction potentials. In addition, the computational simulation was carried out based on the suggested model. As a result, the influence of such experimental parameters as deposition duration, particle charge, gas flow velocity, and angle of gas flow was found. It was demonstrated that electrical charges carried by nanoparticles from the discharge area are not responsible for the formation of tangled chains from nanoparticles, whereas nanoparticle kinetic energy plays a crucial role in deposit morphology and density. The computational results were consistent with experimental results.

  5. Conformal encapsulation of three-dimensional, bioresorbable polymeric scaffolds using plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Hawker, Morgan J; Pegalajar-Jurado, Adoracion; Fisher, Ellen R

    2014-10-21

    Bioresorbable polymers such as poly(ε-caprolactone) (PCL) have a multitude of potential biomaterial applications such as controlled-release drug delivery and regenerative tissue engineering. For such biological applications, the fabrication of porous three-dimensional bioresorbable materials with tunable surface chemistry is critical to maximize their surface-to-volume ratio, mimic the extracellular matrix, and increase drug-loading capacity. Here, two different fluorocarbon (FC) precursors (octofluoropropane (C3F8) and hexafluoropropylene oxide (HFPO)) were used to deposit FC films on PCL scaffolds using plasma-enhanced chemical vapor deposition (PECVD). These two coating systems were chosen with the intent of modifying the scaffold surfaces to be bio-nonreactive while maintaining desirable bulk properties of the scaffold. X-ray photoelectron spectroscopy showed high-CF2 content films were deposited on both the exterior and interior of PCL scaffolds and that deposition behavior is PECVD system specific. Scanning electron microscopy data confirmed that FC film deposition yielded conformal rather than blanket coatings as the porous scaffold structure was maintained after plasma treatment. Treated scaffolds seeded with human dermal fibroblasts (HDF) demonstrate that the cells do not attach after 72 h and that the scaffolds are noncytotoxic to HDF. This work demonstrates conformal FC coatings can be deposited on 3D polymeric scaffolds using PECVD to fabricate 3D bio-nonreactive materials.

  6. Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Broas, Mikael, E-mail: mikael.broas@aalto.fi; Vuorinen, Vesa [Department of Electrical Engineering and Automation, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sippola, Perttu; Pyymaki Perros, Alexander; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sajavaara, Timo [Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40014 Jyväskylä (Finland); Paulasto-Kröckel, Mervi [Department of Electrical Engineering and Automation, Aalto University. P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland)

    2016-07-15

    Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N{sub 2}:H{sub 2} plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.

  7. Growth of nanocrystalline silicon carbide thin films by plasma enhanced chemical vapor deposition

    CERN Document Server

    Lee, S W; Moon, J Y; Ahn, S S; Kim, H Y; Shin, D H

    1999-01-01

    Nanocrystalline silicon carbide thin films have been deposited by plasma enhanced chemical vapor deposition (PECVD) using SiH sub 4 , CH sub 4 , and H sub 2 gases. The effects of gas mixing ratio (CH sub 4 /SiH sub 4), deposition temperature, and RF power on the film properties have been studied. The growth rate, refractive index, and the optical energy gap depends critically on the growth conditions. The dependence of the growth rate on the gas flow ratio is quite different from the results obtained for the growth using C sub 2 H sub 2 gas instead of CH sub 4. As the deposition temperature is increased from 300 .deg. C to 600 .deg. C, hydrogen and carbon content in the film decreases and as a result the optical gap decreases. At the deposition temperature of 600 .deg. C and RF power of 150 W, the film structure si nanocrystalline, As the result of the nanocrystallization the dark conductivity is greatly improved. The nanocrystalline silicon carbide thin films may be used for large area optoelectronic devices...

  8. Boron nitride nanowalls: low-temperature plasma-enhanced chemical vapor deposition synthesis and optical properties

    Science.gov (United States)

    Merenkov, Ivan S.; Kosinova, Marina L.; Maximovskii, Eugene A.

    2017-05-01

    Hexagonal boron nitride (h-BN) nanowalls (BNNWs) were synthesized by plasma-enhanced chemical vapor deposition (PECVD) from a borazine (B3N3H6) and ammonia (NH3) gas mixture at a low temperature range of 400 °C-600 °C on GaAs(100) substrates. The effect of the synthesis temperature on the structure and surface morphology of h-BN films was investigated. The length and thickness of the h-BN nanowalls were in the ranges of 50-200 nm and 15-30 nm, respectively. Transmission electron microscope images showed the obtained BNNWs were composed of layered non-equiaxed h-BN nanocrystallites 5-10 nm in size. The parallel-aligned h-BN layers as an interfacial layer were observed between the film and GaAs(100) substrate. BNNWs demonstrate strong blue light emission, high transparency (>90%) both in visible and infrared spectral regions and are promising for optical applications. The present results enable a convenient growth of BNNWs at low temperatures.

  9. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  10. Chemical Vapour Deposition of Large Area Graphene

    DEFF Research Database (Denmark)

    Larsen, Martin Benjamin Barbour Spanget

    be eliminated. Further opportunities arise when exchanging the copper foil for copper thin film on a wafer e.g. better integration with current cleanroom processing of devices and better control over the copper crystallinity. Typical strategies for controlling the temperature during CVD fabrication of graphene...... of thermocouples leads to large variations in the grown graphene. This was solved by controlling the temperature through applying a set power to the heat source, resulting in a more stable temperature from process to process. Micro Raman spectroscopy is used to characterize the structural quality of the grown......Chemical Vapor Deposition (CVD) is a viable technique for fabrication of large areas of graphene. CVD fabrication is the most prominent and common way of fabricating graphene in industry. In this thesis I have attempted to optimize a growth recipe and catalyst layer for CVD fabrication of uniform...

  11. Plasma enhanced chemical vapor deposition of iron doped thin dioxide films, their structure and photowetting effect

    Energy Technology Data Exchange (ETDEWEB)

    Sobczyk-Guzenda, A., E-mail: anna.sobczyk-guzenda@p.lodz.pl [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland); Owczarek, S.; Szymanowski, H. [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland); Wypych-Puszkarz, A. [Department of Molecular Physics, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz (Poland); Volesky, L. [Technical University of Liberec, Institute for Nanomaterials, Advanced Technologies and Innovation, Studentska 1402/2, 461 17 Liberec 1 (Czech Republic); Gazicki-Lipman, M. [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz (Poland)

    2015-08-31

    Radio frequency plasma enhanced chemical vapor deposition (RF PECVD) technique was applied for the purpose of deposition of iron doped titanium dioxide coatings from a gaseous mixture of oxygen with titanium (IV) chloride and iron (0) pentacarbonyl. Glass slides and silicon wafers were used as substrates. The coatings morphology was investigated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Their elemental and chemical composition was studied with the help of X-ray energy dispersive spectroscopy (EDS) and Fourier transform infrared (FTIR) spectroscopy, respectively, while their phase composition was analyzed with the Raman spectroscopy. For the determination of the film optical properties, ultraviolet (UV–Vis) spectroscopy techniques were used. Iron content in the range of 0.07 to 11.5 at.% was found in the coatings. FTIR studies showed that iron was built-in in the structure of TiO{sub 2} matrix. Surface roughness, assessed with the SEM and AFM techniques, increases with an increasing content of this element. Trace amounts of iron resulted in a lowering of an absorption threshold of the films and their optical gap, but the tendency was reversed for high concentrations of that element. The effect of iron doping on UV photowettability of the films was also studied and, for coatings containing up to 5% of iron, it was stronger than that exhibited by pure TiO{sub 2}. - Highlights: • Iron doped TiO{sub 2} films were deposited with the PECVD method. • Differences of surface morphology of the films with different iron content were shown. • Depending on the iron content, the film structure is either amorphous or crystalline. • A parabolic character of the optical gap dependence on the concentration of iron was observed. • Up to a concentration of 5% of iron, doped TiO{sub 2} films exhibit a super-hydrophilic effect.

  12. Silicon nanowire arrays as learning chemical vapour classifiers

    Energy Technology Data Exchange (ETDEWEB)

    Niskanen, A O; Colli, A; White, R; Li, H W; Spigone, E; Kivioja, J M, E-mail: antti.niskanen@nokia.com [Nokia Research Center, Broers Building, 21 JJ Thomson Avenue, Cambridge CB3 0FA (United Kingdom)

    2011-07-22

    Nanowire field-effect transistors are a promising class of devices for various sensing applications. Apart from detecting individual chemical or biological analytes, it is especially interesting to use multiple selective sensors to look at their collective response in order to perform classification into predetermined categories. We show that non-functionalised silicon nanowire arrays can be used to robustly classify different chemical vapours using simple statistical machine learning methods. We were able to distinguish between acetone, ethanol and water with 100% accuracy while methanol, ethanol and 2-propanol were classified with 96% accuracy in ambient conditions.

  13. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bartlome, Richard, E-mail: richard.bartlome@alumni.ethz.ch; De Wolf, Stefaan; Demaurex, Bénédicte; Ballif, Christophe [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71b, 2000 Neuchâtel (Switzerland); Amanatides, Eleftherios; Mataras, Dimitrios [University of Patras, Department of Chemical Engineering, Plasma Technology Laboratory, P.O. Box 1407, 26504 Patras (Greece)

    2015-05-28

    We clarify the difference between the SiH{sub 4} consumption efficiency η and the SiH{sub 4} depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH{sub 4} consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH{sub 4} concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH{sub 4} concentration in the plasma c{sub p}, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH{sub 4} density measurements throughout the ignition and the termination of a plasma.

  14. Chemical vapour deposited diamonds for dosimetry of radiotherapeutical beams

    Energy Technology Data Exchange (ETDEWEB)

    Bucciolini, M.; Mazzocchi, S. [Firenze Univ., Firenze (Italy). Dipartimento di Fisiopatologia Clinica; INFN, Firenze (Italy); Borchi, E.; Bruzzi, M.; Pini, S.; Sciortino, S. [Firenze Univ., Firenze (Italy). Dipartimento di Energetica; INFN, Firenze (Italy); Cirrone, G.A.P.; Guttone, G.; Raffaele, L.; Sabini, M.G. [INFN, Catania (Italy). Laboratori Nazionali del Sud

    2002-07-01

    This paper deals with the application of synthetic diamond detectors to the clinical dosimetry of photon and electron beams. It has been developed in the frame of INFN CANDIDO project and MURST Cofin. Diamonds grown with CVD (Chemical Vapour Deposition) technique have been studied; some of them are commercial samples while others have been locally synthesised. Experiments have been formed using both on-line and off-line approaches. For the off-line measurements, TL (thermoluminescent) and TSC (thermally stimulated current) techniques have been used.

  15. SiO{sub 2}/TiO{sub 2} thin films with variable refractive index prepared by ion beam induced and plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gracia, F. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Yubero, F. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Holgado, J.P. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain); Gonzalez-Elipe, A.R. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla) and Dpt. Q. Inorganica, Avda. Americo Vespucio s/n, 41092 Sevilla (Spain)]. E-mail: arge@icmse.csic.es; Girardeau, T. [Laboratoire de Metallurgie Physique de Poitiers, UMR 6630 CNRS, Bat SP2MI BP 30179, 86962-Futuroscope-Chasseneuil Cedex (France)

    2006-04-03

    SiO{sub 2}/TiO{sub 2} optical thin films with variable compositions have been prepared by ion beam induced and plasma enhanced chemical vapour deposition (IBICVD and PECVD). While the films obtained by IBICVD were very compact, the PECVD ones with a high content of Ti presented a columnar microstructure. The formation of Si-O-Ti bonds and a change in the environment around titanium from four- to six-coordinated has been proved by vibrational and X-ray absorption spectroscopies. The refractive index increased with the titanium content from 1.45 to 2.46 or 2.09 for, respectively, the IBICVD and PECVD films. Meanwhile, the band gap decreased, first sharply and then more smoothly up to the value of pure TiO{sub 2}. It is concluded that the optical properties of SiO{sub 2}/TiO{sub 2} thin films can be properly tailored by using these two procedures.

  16. Evaluation of chemical and structural properties of germanium-carbon coatings deposited by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, Hossein, E-mail: h.jamali@mut-es.ac.ir; Mozafarinia, Reza; Eshaghi, Akbar

    2015-10-15

    Germanium-carbon coatings were deposited on silicon and glass substrates by plasma enhanced chemical vapor deposition (PECVD) using three different flow ratios of GeH{sub 4} and CH{sub 4} precursors. Elemental analysis, structural evaluation and microscopic investigation of coatings were performed using laser-induced breakdown spectroscopy (LIBS), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. Based on the results, the coatings exhibited a homogeneous and dense structure free of pores with a very good adhesion to substrate. The structural evaluation revealed that the germanium-carbon coatings were a kind of a Ge-rich composite material containing the amorphous and crystalline germanium and amorphous carbon with the mixture of Ge–Ge, Ge–C, C–C, Ge–H and C–H bonds. The result suggested that the amorphisation of the coatings could be increased with raising CH{sub 4}:GeH{sub 4} flow rate ratio and subsequently increasing C amount incorporated into the coating. - Highlights: • Germanium-carbon coatings were prepared by PECVD technique. • The germanium-carbon coatings were a kind of composite material. • The amorphisation of the coatings were increased with raising CH{sub 4}:GeH{sub 4} flow ratio.

  17. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Hao [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States)]. E-mail: hao.jiang@wpafb.af.mil; Hong Lianggou [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States); Venkatasubramanian, N. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Grant, John T. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Eyink, Kurt [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Wiacek, Kevin [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Fries-Carr, Sandra [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Enlow, Jesse [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Bunning, Timothy J. [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States)

    2007-02-26

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant ({epsilon} {sub r}) and dielectric loss (tan {delta}) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F {sub b}) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F{sub b} of 610 V/{mu}m, an {epsilon} {sub r} of 3.07, and a tan {delta} of 7.0 x 10{sup -3} at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss.

  18. Electrochromic Devices Deposited on Low-Temperature Plastics by Plasma-Enhanced Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Robbins, Joshua; Seman, Michael

    2005-09-20

    Electrochromic windows have been identified by the Basic energy Sciences Advisory committee as an important technology for the reduction of energy spent on heating and cooling in residential and commercial buildings. Electrochromic devices have the ability to reversibly alter their optical properties in response to a small electric field. By blocking ultraviolet and infrared radiation, while modulating the incoming visible radiation, electrochromics could reduce energy consumption by several Quads per year. This amounts to several percent of the total annual national energy expenditures. The purpose of this project was to demonstrate proof of concept for using plasma-enhanced chemical vapor deposition (PECVD) for depositing all five layers necessary for full electrochromic devices, as an alternative to sputtering techniques. The overall goal is to produce electrochromic devices on flexible polymer substrates using PECVD to significantly reduce the cost of the final product. We have successfully deposited all of the films necessary for a complete electrochromic devices using PECVD. The electrochromic layer, WO3, displayed excellent change in visible transmission with good switching times. The storage layer, V2O5, exhibited a high storage capacity and good clear state transmission. The electrolyte, Ta2O5, was shown to functional with good electrical resistivity to go along with the ability to transfer Li ions. There were issues with leakage over larger areas, which can be address with further process development. We developed a process to deposit ZnO:Ga with a sheet resistance of < 50 W/sq. with > 90% transmission. Although we were not able to deposit on polymers due to the temperatures required in combination with the inverted position of our substrates. Two types of full devices were produced. Devices with Ta2O5 were shown to be functional using small aluminum dots as the top contact. The polymer electrolyte devices were shown to have a clear state transmission of

  19. The Chemical Vapour Deposition of Tantalum - in long narrow channels

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki

    use as a construction material for process equipment, with the cheaper alternative being the construction of equipment from steel and then protecting it with a thin but efficacious layer of tantalum. Chemical Vapour Deposition (CVD) is chosen as the most effective process to apply thin corrosion...... protective layers of tantalum because of the process’ ability to coat complex geometries and its relative ease to control. This work focuses on studying the CVD of tantalum in long narrow channels with the view that the knowledge gained during the project can be used to optimise the commercial coating...... process that Tantaline A/S and Alfa Laval (Sweden) use to manufacture tantalum coated plate heat exchangers. Experiments are done by coating the inner side of long, thin stainless steel tubes in the temperature range of 700 – 950 °C and pressure range of 25 – 990 mbar while using different reactant...

  20. Thermoluminescence characterisation of chemical vapour deposited diamond films

    CERN Document Server

    Mazzocchi, S; Bucciolini, M; Cuttone, G; Pini, S; Sabini, M G; Sciortino, S

    2002-01-01

    The thermoluminescence (TL) characteristics of a set of six chemical vapour deposited diamond films have been studied with regard to their use as off-line dosimeters in radiotherapy. The structural characterisation has been performed by means of Raman spectroscopy. Their TL responses have been tested with radiotherapy beams ( sup 6 sup 0 Co photons, photons and electrons from a linear accelerator (Linac), 26 MeV protons from a TANDEM accelerator) in the dose range 0.1-7 Gy. The dosimetric characterisation has yielded a very good reproducibility, a very low dependence of the TL response on the type of particle and independence of the radiation energy. The TL signal is not influenced by the dose rate and exhibits a very low thermal fading. Moreover, the sensitivity of the diamond samples compares favourably with that of standard TLD100 dosimeters.

  1. Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

    Energy Technology Data Exchange (ETDEWEB)

    Sulyaeva, Veronica S., E-mail: veronica@niic.nsc.ru [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A. [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, Valerii G. [Laboratory of Physical Principles for Integrated Microelectronics, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Kirienko, Viktor V. [Laboratory of Nonequilibrium Semiconductors Systems, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation)

    2014-05-02

    Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers (93%). • BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9.

  2. Plasma-enhanced chemical vapor deposition of graphene on copper substrates

    Directory of Open Access Journals (Sweden)

    Nicolas Woehrl

    2014-04-01

    Full Text Available A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO2 substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm2. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

  3. Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

    Science.gov (United States)

    Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

    2016-06-01

    Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

  4. Laser diagnostics of chemical vapour deposition of diamond films

    CERN Document Server

    Wills, J B

    2002-01-01

    Cavity ring down spectroscopy (CRDS) has been used to make diagnostic measurements of chemically activated CH sub 4 / H sub 2 gas mixtures during the chemical vapour deposition (CVD) of thin diamond films. Absolute absorbances, concentrations and temperatures are presented for CH sub 3 , NH and C sub 2 H sub 2 in a hot filament (HF) activated gas mixture and CH, C sub 2 and C sub 2 H sub 2 in a DC arc plasma jet activated mixture. Measurements of the radical species were made using a pulsed dye laser system to generate tuneable visible and UV wavelengths. These species have greatest concentration in the hottest, activated regions of the reactors. Spatial profiling of the number densities of CH sub 3 and NH radicals have been used as stringent tests of predictions of radical absorbance and number densities made by 3-D numerical simulations, with near quantitative agreement. O sub 2 has been shown to reside in the activated region of the Bristol DC arc jet at concentrations (approx 10 sup 1 sup 3 molecules / cm...

  5. Cell proliferation on modified DLC thin films prepared by plasma enhanced chemical vapor deposition.

    Science.gov (United States)

    Stoica, Adrian; Manakhov, Anton; Polčák, Josef; Ondračka, Pavel; Buršíková, Vilma; Zajíčková, Renata; Medalová, Jiřina; Zajíčková, Lenka

    2015-06-12

    Recently, diamondlike carbon (DLC) thin films have gained interest for biological applications, such as hip and dental prostheses or heart valves and coronary stents, thanks to their high strength and stability. However, the biocompatibility of the DLC is still questionable due to its low wettability and possible mechanical failure (delamination). In this work, DLC:N:O and DLC: SiOx thin films were comparatively investigated with respect to cell proliferation. Thin DLC films with an addition of N, O, and Si were prepared by plasma enhanced CVD from mixtures of methane, hydrogen, and hexamethyldisiloxane. The films were optically characterized by infrared spectroscopy and ellipsometry in UV-visible spectrum. The thickness and the optical properties were obtained from the ellipsometric measurements. Atomic composition of the films was determined by Rutherford backscattering spectroscopy combined with elastic recoil detection analysis and by x-ray photoelectron spectroscopy. The mechanical properties of the films were studied by depth sensing indentation technique. The number of cells that proliferate on the surface of the prepared DLC films and on control culture dishes were compared and correlated with the properties of as-deposited and aged films. The authors found that the level of cell proliferation on the coated dishes was high, comparable to the untreated (control) samples. The prepared DLC films were stable and no decrease of the biocompatibility was observed for the samples aged at ambient conditions.

  6. On The Stability Of Model Flows For Chemical Vapour Deposition

    Science.gov (United States)

    Miller, Robert

    2016-11-01

    The flow in a chemical vapour deposition (CVD) reactor is assessed. The reactor is modelled as a flow over an infinite-radius rotating disk, where the mean flow and convective instability of the disk boundary layer are measured. Temperature-dependent viscosity and enforced axial flow are used to model the steep temperature gradients present in CVD reactors and the pumping of the gas towards the disk, respectively. Increasing the temperature-dependence parameter of the fluid viscosity (ɛ) results in an overall narrowing of the fluid boundary layer. Increasing the axial flow strength parameter (Ts) accelerates the fluid both radially and axially, while also narrowing the thermal boundary layer. It is seen that when both effects are imposed, the effects of axial flow generally dominate those of the viscosity temperature dependence. A local stability analysis is performed and the linearized stability equations are solved using a Galerkin projection in terms of Chebyshev polynomials. The neutral stability curves are then plotted for a range of ɛ and Ts values. Preliminary results suggest that increasing Ts has a stabilising effect on both type I and type II stationary instabilities, while small increases in ɛ results in a significant reduction to the critical Reynolds number.

  7. Reducing chemical vapour infiltration time for ceramic matrix composites.

    Science.gov (United States)

    Timms, L. A.; Westby, W.; Prentice, C.; Jaglin, D.; Shatwell, R. A.; Binner, J. G. P.

    2001-02-01

    Conventional routes to producing ceramic matrix composites (CMCs) require the use of high temperatures to sinter the individual ceramic particles of the matrix together. Sintering temperatures are typically much higher than the upper temperature limits of the fibres. This paper details preliminary work carried out on producing a CMC via chemical vapour infiltration (CVI), a process that involves lower processing temperatures, thus avoiding fibre degradation. The CVI process has been modified and supplemented in an attempt to reduce the CVI process time and to lower the cost of this typically expensive process. To this end microwave-enhanced CVI (MECVI) has been chosen, along with two alternative pre-infiltration steps: electrophoretic infiltration and vacuum bagging. The system under investigation is based on silicon carbide fibres within a silicon carbide matrix (SiCf/SiC). The results demonstrate that both approaches result in an enhanced initial density and a consequent significant reduction in the time required for the MECVI processing step. Dual energy X-ray absorptiometry was used as a non-destructive, density evaluation technique. Initial results indicate that the presence of the SiC powder in the pre-form changes the deposition profile during the MECVI process.

  8. The atmospheric chemical vapour deposition of coatings on glass

    CERN Document Server

    Sanderson, K D

    1996-01-01

    The deposition of thin films of indium oxide, tin doped indium oxide (ITO) and titanium nitride for solar control applications have been investigated by Atmospheric Chemical Vapour Deposition (APCVD). Experimental details of the deposition system and the techniques used to characterise the films are presented. Results from investigations into the deposition parameters, the film microstructure and film material properties are discussed. A range of precursors were investigated for the deposition of indium oxide. The effect of pro-mixing the vaporised precursor with an oxidant source and the deposition temperature has been studied. Polycrystalline In sub 2 O sub 3 films with a resistivity of 1.1 - 3x10 sup - sup 3 OMEGA cm were obtained with ln(thd) sub 3 , oxygen and nitrogen. The growth of ITO films from ln(thd) sub 3 , oxygen and a range of tin dopants is also presented. The effect of the dopant precursor, the doping concentration, deposition temperature and the effect of additives on film growth and microstr...

  9. Controlled oxidation of iron nanoparticles in chemical vapour synthesis

    Science.gov (United States)

    Ruusunen, Jarno; Ihalainen, Mika; Koponen, Tarmo; Torvela, Tiina; Tenho, Mikko; Salonen, Jarno; Sippula, Olli; Joutsensaari, Jorma; Jokiniemi, Jorma; Lähde, Anna

    2014-02-01

    In the present study, iron oxide nanoparticles (primary particle size of 80-90 nm) with controlled oxidation state were prepared via an atmospheric pressure chemical vapour synthesis (APCVS) method. Iron pentacarbonyl [Fe(CO)5], a precursor material, was thermally decomposed to iron in the APCVS reactor. Subsequently, the iron was oxidized with controlled amount of oxygen in the reactor to produce nearly pure magnetite or haematite particles depending on the oxygen concentration. Size, morphology and crystal structure of the synthesized nanoparticles were studied with scanning mobility particle sizer (SMPS), transmission electron microscopy (TEM) and X-ray diffraction (XRD). In addition, thermodynamic equilibrium calculations and computational fluid dynamics model were used to predict the oxidation state of the iron oxides and the reaction conditions during mixing. Aggregates of crystalline particles were formed, determined as magnetite at the oxygen volumetric fraction of 0.1 % and haematite at volumetric fraction of 0.5 %, according to the XRD. The geometric mean electrical mobility diameter of the aggregates increased from 110 to 155 nm when the volumetric fraction of oxygen increased from 0.1 to 0.5 %, determined using the SMPS. The aggregates were highly sintered based on TEM analyses. As a conclusion, APCVS method can be used to produce nearly pure crystalline magnetite or haematite nanoparticles with controlled oxidation in a continuous one-stage gas-phase process.

  10. Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors

    Science.gov (United States)

    Choi, S. W.; Lucovsky, G.; Bachmann, K. J.

    1992-01-01

    Thin homoepitaxial films of gallium phosphide (GaP) have been grown by remote plasma enhanced chemical vapor deposition utilizing in situ-generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (RF) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate; however, the saturation of the growth rate at even higher RF power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.

  11. Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors

    Science.gov (United States)

    Choi, S. W.; Lucovsky, G.; Bachmann, Klaus J.

    1993-01-01

    Thin homoepitaxial films of gallium phosphide (GaP) were grown by remote plasma enhanced chemical vapor deposition utilizing in situ generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (rf) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate, however, the saturation of the growth rate at even higher rf power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.

  12. Highly efficient shrinkage of inverted-pyramid silicon nanopores by plasma-enhanced chemical vapor deposition technology

    Science.gov (United States)

    Wang, Yifan; Deng, Tao; Chen, Qi; Liang, Feng; Liu, Zewen

    2016-06-01

    Solid-state nanopore-based analysis systems are currently one of the most attractive and promising platforms in sensing fields. This work presents a highly efficient method to shrink inverted-pyramid silicon nanopores using plasma-enhanced chemical vapor deposition (PECVD) technology by the deposition of SiN x onto the surface of the nanopore. The contraction of the inverted-pyramid silicon nanopores when subjected to the PECVD process has been modeled and carefully analyzed, and the modeling data are in good agreement with the experimental results within a specific PECVD shrinkage period (˜0-600 s). Silicon nanopores within a 50-400 nm size range contract to sub-10 nm dimensions. Additionally, the inner structure of the nanopores after the PECVD process has been analyzed by focused ion beam cutting process. The results show an inner structure morphology change from inverted-pyramid to hourglass, which may enhance the spatial resolution of sensing devices.

  13. Microstructural modification of nc-Si/SiO{sub x} films during plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, X.W. [State Key Laboratory of Silicon Materials Science, Zhejiang University, Hangzhou 310027 (China)

    2005-07-01

    Nanocrystalline-silicon embedded silicon oxide films are prepared by plasma-enhanced chemical vapor deposition (PECVD) at 300 C without post-heat treatment. Measurements of XPS, IR, XRD, and HREM are performed. Microstructural modifications are found occurring throughout the film deposition. The silica network with a high oxide state is suggested to be formed directly under the abduction of the former deposited layer, rather than processing repeatedly from the original low-oxide state of silica. Nanocrystalline silicon particles with a size of 6-10 nm are embedded in the SiO{sub x} film matrix, indicating the potential application in Si-based optoelectronic integrity. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Highly efficient shrinkage of inverted-pyramid silicon nanopores by plasma-enhanced chemical vapor deposition technology.

    Science.gov (United States)

    Wang, Yifan; Deng, Tao; Chen, Qi; Liang, Feng; Liu, Zewen

    2016-06-24

    Solid-state nanopore-based analysis systems are currently one of the most attractive and promising platforms in sensing fields. This work presents a highly efficient method to shrink inverted-pyramid silicon nanopores using plasma-enhanced chemical vapor deposition (PECVD) technology by the deposition of SiN x onto the surface of the nanopore. The contraction of the inverted-pyramid silicon nanopores when subjected to the PECVD process has been modeled and carefully analyzed, and the modeling data are in good agreement with the experimental results within a specific PECVD shrinkage period (∼0-600 s). Silicon nanopores within a 50-400 nm size range contract to sub-10 nm dimensions. Additionally, the inner structure of the nanopores after the PECVD process has been analyzed by focused ion beam cutting process. The results show an inner structure morphology change from inverted-pyramid to hourglass, which may enhance the spatial resolution of sensing devices.

  15. High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by high- pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality μc-Si:H films have been achieved with a high deposition rate of 7.8 /s at a high pressure. The Voc of 560 mV and the FF of 0.70 have been achieved for a single-junction μc-Si:H p-i-n solar cell at a deposition rate of 7.8 /s.

  16. Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

    2017-03-01

    Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

  17. Plasma-enhanced chemical vapor deposition of low- loss as-grown germanosilicate layers for optical waveguides

    Science.gov (United States)

    Ay, Feridun; Agan, Sedat; Aydinli, Atilla

    2004-08-01

    We report on systematic growth and characterization of low-loss germanosilicate layers for use in optical waveguides. Plasma enhanced chemical vapor deposition (PECVD) technique was used to grow the films using silane, germane and nitrous oxide as precursor gases. Chemical composition was monitored by Fourier transform infrared (FTIR) spectroscopy. N-H bond concentration of the films decreased from 0.43x1022 cm-3 down to below 0.06x1022 cm-3, by a factor of seven as the GeH4 flow rate increased from 0 to 70 sccm. A simultaneous decrease of O-H related bonds was also observed by a factor of 10 in the same germane flow range. The measured TE rate increased from 5 to 50 sccm, respectively. In contrast, the propagation loss values for TE polarization at λ=632.8 nm were found to increase from are 0.20 +/- 0.02 to 6.46 +/- 0.04 dB/cm as the germane flow rate increased from 5 to 50 sccm, respectively. In contrast, the propagation loss values for TE polarization at λ=1550 nm were found to decrease from 0.32 +/- 0.03 down to 0.14 +/- 0.06 dB/cm for the same samples leading to the lowest values reported so far in the literature, eliminating the need for high temperature annealing as is usually done for these materials to be used in waveguide devices.

  18. Plasma-enhanced chemical vapor deposition of ortho-carborane: structural insights and interaction with Cu overlayers.

    Science.gov (United States)

    James, Robinson; Pasquale, Frank L; Kelber, Jeffry A

    2013-09-01

    X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) are used to investigate the chemical and electronic structure of boron carbide films deposited from ortho-carborane precursors using plasma-enhanced chemical vapor deposition (PECVD), and the reactivity of PECVD films toward sputter-deposited Cu overlayers. The XPS data provide clear evidence of enhanced ortho-carborane reactivity with the substrate, and of extra-icosahedral boron and carbon species; these results differ from results for films formed by condensation and electron beam induced cross-linking of ortho-carborane (EBIC films). The UPS data show that the valence band maximum for PECVD films is ∼1.5 eV closer to the Fermi level than for EBIC films. The XPS data also indicate that PECVD films are resistant to thermally-stimulated diffusion of Cu at temperatures up to 1000 K in UHV, in direct contrast to recently reported results, but important for applications in neutron detection and in microelectronics.

  19. Plasma-enhanced chemical vapor deposition of low-loss SiON optical waveguides at 15-microm wavelength.

    Science.gov (United States)

    Bruno, F; Guidice, M D; Recca, R; Testa, F

    1991-11-01

    Good optical-quality SiON layers deposited upon a SiO(2) buffer layer placed upon silicon wafers have been obtained by using plasma-enhanced chemical vapor deposition from SiH(4), NH(3), and N(2)O. Optical planar waveguides with a thickness of 5 microm and a refractive index of 1.470 have been deposited and investigated in the wavelength region of 1.3-1.6 microm. Three absorption bands at 1.40, 1.48, and 1.54 microm have been detected and interpreted as Si-OH, N-H, and Si-H vibrational modes, respectively. Absorption losses of 3.8 dB/cm at 1.4 microm and 3.2 dB/cm at 1.51 microm have been measured. A mild annealing at approximately 800 degrees C completely removes the band at 1.40 microm, whereas strong reduction of absorption at 1.51 microm requires 3 h of annealing at 1100 degrees C. As a result, propagation losses of 0.36 to 0.54 dB/cm have been measured at 1.54-microm wavelength.

  20. A new perspective on structural and morphological properties of carbon nanotubes synthesized by Plasma Enhanced Chemical Vapor Deposition technique

    Science.gov (United States)

    Salar Elahi, A.; Agah, K. Mikaili; Ghoranneviss, M.

    CNTs were produced on a silicon wafer by Plasma Enhanced Chemical Vapor Deposition (PECVD) using acetylene as a carbon source, cobalt as a catalyst and ammonia as a reactive gas. The DC-sputtering system was used to prepare cobalt thin films on Si substrates. A series of experiments was carried out to investigate the effects of reaction temperature and deposition time on the synthesis of the nanotubes. The deposition time was selected as 15 and 25 min for all growth temperatures. Energy Dispersive X-ray (EDX) measurements were used to investigate the elemental composition of the Co nanocatalyst deposited on Si substrates. Atomic Force Microscopy (AFM) was used to characterize the surface topography of the Co nanocatalyst deposited on Si substrates. The as-grown CNTs were characterized under Field Emission Scanning Electron Microscopy (FESEM) to study the morphological properties of CNTs. Also, the grown CNTs have been investigated by High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. The results demonstrated that increasing the temperature leads to increasing the diameter of CNTs.

  1. Highly Uniform Wafer-scale Synthesis of α-MoOsub>3sub> by Plasma Enhanced Chemical Vapor Deposition.

    Science.gov (United States)

    Kim, HyeongU; Son, Juhyun; Kulkarni, Atul; Ahn, Chisung; Kim, Ki Seok; Shin, Dongjoo; Yeom, Geun; Kim, Taesung

    2017-03-20

    Molybdenum oxide (MoOsub>3sub>) has gained immense attention because of its high electron mobility, wide band gap, and excellent optical and catalytic properties. However, the synthesis of uniform and large-area MoOsub>3sub> is challenging. Here, we report the synthesis of wafer-scale α-MoO3 by plasma oxidation of Mo-deposited on Si/SiOsub>2sub>. Mo was oxidized by Osub>2sub> plasma in a plasma enhanced chemical vapor deposition (PECVD) system at 150 °C. Mo was oxidized by Osub>2sub> plasma in a PECVD system at 150 °C. It was found that the synthesized α-MoOsub>3sub> had a highly uniform crystalline structure. For the as-synthesized α-MoOsub>3sub> sensor, we observed a current change when the relative humidity was increased from 11% to 95%. The sensor was exposed to different humidity levels with fast recovery time of about 8 s. Hence this feasibility study shows that MoOsub>3sub> synthesized at low temperature can be utilized for the gas sensing applications by adopting flexible device technology.

  2. Plasma-enhanced Chemical Vapordeposition SiO2 Film after Ion Implantation Induces Quantum Well Intermixing

    Institute of Scientific and Technical Information of China (English)

    PENG Jucun; WU Boying; CHEN Jie; ZHAO Jie; WANG Yongchen

    2006-01-01

    A method of QWI ( quantum well intermixing) realizing through plasma-enhanced chemical vapordepositiom (PECVD) SiO2 film following ion implantation was investigated. PECVD 200 nm SiO2 film after 160 keV phosphorus(P) ion implantation was performed to induce InP-based multiple-quantum-well (MQW) laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N2 flue, the blue shift ofphotoluminescence (PL) peak related to implanted dose: 1 × 1011 , 1 × 1012, 1 × 1013 ,3 × 1013 , 7 × 1013 ion/ cm2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However , SiO2 film also may promote the quantum well intermixing.

  3. Selective adhesion of intestinal epithelial cells on patterned films with amine functionalities formed by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyung Seop; Choi, Changrok; Kim, Soo Heon; Choi, Kun oh [Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Jeong Min [Department of Molecular Biology and Institute of Nanosensor and Biotechnology, BK21 Graduate Program for RNA Biology, Dankook University, Yongin 448-701 (Korea, Republic of); Kim, Hong Ja [Department of Internal Medicine, Dankook University College of Medicine, Cheonan 330-715 (Korea, Republic of); Yeo, Sanghak [R and D Center, ELBIO Incorporation, 426-5 Gasan-dong Geumchun-gu, Seoul (Korea, Republic of); Park, Heonyong [Department of Molecular Biology and Institute of Nanosensor and Biotechnology, BK21 Graduate Program for RNA Biology, Dankook University, Yongin 448-701 (Korea, Republic of); Jung, Donggeun, E-mail: djung@skku.ac.kr [Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2010-11-01

    Control of cell adhesion to surfaces is important to develop analytical tools in the areas of biomedical engineering. To control cell adhesiveness of the surface, we constructed a variety of plasma polymerized hexamethyldisiloxane (PPHMDSO) thin films deposited at the plasma power range of 10-100 W by plasma enhanced chemical vapor deposition (PECVD). The PPHMDSO film that was formed at 10 W was revealed to be resistant to cell adhesion. The resistance to cell adhesion is closely related to physicochemical properties of the film. Atomic force microscopic data show an increase in surface roughness from 0.52 nm to 0.74 nm with increasing plasma power. From Fourier transform infrared (FT-IR) absorption spectroscopy data, it was also determined that the methyl (-CH{sub 3}) peak intensity increases with increasing plasma power, whereas the hydroxyl (-OH) peak decreases. X-ray photoelectron spectroscopy data reveal an increase in C-O bonding with increasing plasma power. These results suggest that C-O bonding and hydroxyl (-OH) and methyl (-CH{sub 3}) functional groups play a critical part in cell adhesion. Furthermore, to enhance a diversity of film surface, we accumulated the patterned plasma polymerized ethylenediamine (PPEDA) thin film on the top of the PPHMDSO thin film. The PPEDA film is established to be strongly cell-adherent. This patterned two-layer film stacking method can be used to form the selectively limited cell-adhesive PPEDA spots over the adhesion-resistant surface.

  4. A computer-controlled system for generation of chemical vapours in in vitro dermal uptake studies.

    Science.gov (United States)

    Rauma, Matias; Johanson, Gunnar

    2007-02-01

    Recent work in our laboratory suggests that dermal absorption and desorption of volatile chemicals may be assessed in vitro by thermogravimetric analysis (TGA), i.e. by passing chemical vapour over a piece of skin while recording the weight increase at constant temperature and humidity. This paper describes a high-precision automated vapour-generating system for use with the TGA equipment. The system consists of computer-controlled magnetic valves and mass flow meters that split and redirect a flow of pure, dry air through different stainless-steel gas wash bottles thermostated to 25.00+/-0.05 degrees C. Each wash bottle is filled with a neat volatile chemical and designed so that the air leaving reaches 100% saturation within seconds, as shown with cyclohexanone. The air leaving the wash bottles are combined and directed via stainless-steel liners to the skin piece in the TGA chamber. The liners are heated to 30 degrees C to prevent condensation of water or chemical. Special computer software was developed to allow automatic runs with different wash bottles (chemicals) and air flows over several days. A number of measurements were made to characterize the stability and reproducibility of the vapour-generating system. We have developed a computer-controlled vapour-generating system for use in measurements of dermal absorption of chemicals by thermal gravimetry. The system has high stability and reproducibility and produces little noise.

  5. Low-temperature synthesis of diamond films by photoemission-assisted plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kawata, Mayuri, E-mail: kawata@mail.tagen.tohoku.ac.jp; Ojiro, Yoshihiro; Ogawa, Shuichi; Takakuwa, Yuji [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Masuzawa, Tomoaki; Okano, Ken [International Christian University, 3-10-2 Osawa, Mitaka 181-8585 (Japan)

    2014-03-15

    Photoemission-assisted plasma-enhanced chemical vapor deposition (PA-PECVD), a process in which photoelectrons emitted from a substrate irradiated with ultraviolet light are utilized as a trigger for DC discharge, was investigated in this study; specifically, the DC discharge characteristics of PA-PECVD were examined for an Si substrate deposited in advance through hot-filament chemical vapor deposition with a nitrogen-doped diamond layer of thickness ∼1 μm. Using a commercially available Xe excimer lamp (hν = 7.2 eV) to illuminate the diamond surface with and without hydrogen termination, the photocurrents were found to be 3.17 × 10{sup 12} and 2.11 × 10{sup 11} electrons/cm{sup 2}/s, respectively. The 15-fold increase in photocurrent was ascribed to negative electron affinity (NEA) caused by hydrogen termination on the diamond surfaces. The DC discharge characteristics revealed that a transition bias voltage from a Townsend-to-glow discharge was considerably decreased because of NEA (from 490 to 373 V for H{sub 2} gas and from 330 to 200 V for Ar gas), enabling a reduction in electric power consumption needed to synthesize diamond films through PA-PECVD. In fact, the authors have succeeded in growing high-quality diamond films of area 2.0 cm{sup 2} at 540 °C with a discharge power of only 1.8 W, plasma voltage of 156.4 V, and discharge current of 11.7 mA under the glow discharge of CH{sub 4}/H{sub 2}/Ar mixed gases. In addition to having only negligible amounts of graphite and amorphous carbon, the diamond films exhibit a relatively high diamond growth rate of 0.5 μm/h at temperatures as low as 540 °C, which is attributed to Ar{sup +} ions impinging on the diamond surface, and causing the removal of hydrogen atoms from the surface through sputtering. This process leads to enhanced CH{sub x} radical adsorption, because the sample was applied with a negative potential to accelerate photoelectrons in PA-PECVD.

  6. Properties of alumina films by atmospheric pressure metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Corbach, van H.D.; Fransen, T.; Gellings, P.J.

    1994-01-01

    Thin alumina films were deposited at low temperatures (290–420°C) on stainless steel, type AISI 304. The deposition process was carried out in nitrogen by metal-organic chemical vapour deposition using aluminum tri-sec-butoxide. The film properties including the protection of the underlying substrat

  7. The mechanical properties of thin alumina film deposited by metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Gellings, P.J.; Vendel, van de D.; Metselaar, H.S.C.; Corbach, van H.D.; Fransen, T.

    1995-01-01

    Amorphous alumina films were deposited by metal-organic chemical vapour deposition (MOCVD) on stainless steel, type AISI 304. The MOCVD experiments were performed in nitrogen at low and atmospheric pressures. The effects of deposition temperature, growth rate and film thickness on the mechanical pro

  8. Expanding thermal plasma chemical vapour deposition of ZnO:Al layers for CIGS solar cells

    NARCIS (Netherlands)

    Sharma, K.; Williams, B.L.; Mittal, A.; Knoops, H.C.M.; Kniknie, B.J.; Bakker, N.J.; Kessels, W.M.M.; Schropp, R.E.I.; Creatore, M.

    2014-01-01

    Aluminium-doped zinc oxide (ZnO:Al) grown by expanding thermal plasma chemical vapour deposition (ETP-CVD) has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing ZnO

  9. The effect of air permeability of chemical protective clothing material on clothing vapour resistance

    NARCIS (Netherlands)

    Havenith, G.; Vuister, R.; Wammes, L.

    1996-01-01

    One of the major problems associated with Chemical Warfare Protective Clothing (CW) is the additional heat load created by the garments. For CW-overgarments, research in the direction of reducing material thickness and thus heat and vapour resistance have not resulted in major improvements. The

  10. Expanding thermal plasma chemical vapour deposition of ZnO:Al layers for CIGS solar cells

    NARCIS (Netherlands)

    Sharma, K.; Williams, B.L.; Mittal, A.; Knoops, H.C.M.; Kniknie, B.J.; Bakker, N.J.; Kessels, W.M.M.; Schropp, R.E.I.; Creatore, M.

    2014-01-01

    Aluminium-doped zinc oxide (ZnO:Al) grown by expanding thermal plasma chemical vapour deposition (ETP-CVD) has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing ZnO

  11. Comparison of hafnium silicate thin films on silicon (1 0 0) deposited using thermal and plasma enhanced metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rangarajan, Vishwanathan; Bhandari, Harish; Klein, Tonya M

    2002-11-01

    Hafnium silicate thin films were deposited by metal organic chemical vapor deposition (MOCVD) on Si at 400 deg. C using hafnium (IV) t-butoxide. Films annealed in O{sub 2} were compared to as-deposited films using X-ray photoelectron spectroscopy and X-ray diffraction. Hafnium silicate films were deposited by both thermal and plasma enhanced MOCVD using 2% SiH{sub 4} in He as the Si precursor. An O{sub 2} plasma increased Si content to as much as {approx}26 at.% Si. Both thermal and plasma deposited Hf silicates are amorphous as deposited, however, thermal films exhibit crystallinity after anneal. Surface roughness as measured by atomic force microscopy was found to be 1.1 and 5.1 nm for MOCVD hafnium silicate and plasma enhanced MOCVD hafnium silicate, respectively.

  12. Applicability of chemical vapour polishing of additive manufactured parts to meet production-quality

    DEFF Research Database (Denmark)

    Pedersen, D. B.; Hansen, H. N.; Nielsen, J. S.

    2014-01-01

    The Fused Deposition Modelling (FDM) method is the most rapidly growing Additive Manufacturing (AM) method[1]. FDM employs a 2.5D deposition scheme which induce a step-ladder shaped surface definition [2], with seams of the individual layers clearly visible[3]. This paper investigate to which...... extend chemical vapour polishing can be applied to eliminate the layered surfaces from FDM, so that a polished surface quality is obtained. It is quantified to what extend parts can be vapour polished and how geometrical and mechanical properties alter. The fundamental question is whether the surfaces...

  13. Functionalization of Hydrogenated Chemical Vapour Deposition-Grown Graphene by On-Surface Chemical Reactions.

    Science.gov (United States)

    Drogowska, Karolina; Kovaříček, Petr; Kalbáč, Martin

    2017-03-23

    The reactivity of hydrogenated graphene when treated with oxidising agents, KMnO4 and KIO4 , as well as alkylated with benzyl bromide (BnBr) was studied. The probed reactions are strictly limited to the partly hydrogenated form of graphene in which most of the hydrogen atoms are located in activated benzylic/allylic positions. This, in turn, clearly demonstrates the presence of hydrogen attached to the graphene lattice. Attachment of the benzyl group was also unequivocally demonstrated by characteristic vibrations recorded in the surface-enhanced Raman spectra, and all reactions were shown to proceed solely on hydrogenated graphene as evidenced by the comparison with pristine chemical vapour deposition-grown graphene.

  14. Boundary layer chemical vapour synthesis of self-organised ferromagnetically filled radial-carbon-nanotube structures.

    Science.gov (United States)

    Boi, Filippo S; Wilson, Rory M; Mountjoy, Gavin; Ibrar, Muhammad; Baxendale, Mark

    2014-01-01

    Boundary layer chemical vapour synthesis is a new technique that exploits random fluctuations in the viscous boundary layer between a laminar flow of pyrolysed metallocene vapour and a rough substrate to yield ferromagnetically filled radial-carbon-nanotube structures departing from a core agglomeration of spherical nanocrystals individually encapsulated by graphitic shells. The fluctuations create the thermodynamic conditions for the formation of the central agglomeration in the vapour which subsequently defines the spherically symmetric diffusion gradient that initiates the radial growth. The radial growth is driven by the supply of vapour feedstock by local diffusion gradients created by endothermic graphitic-carbon formation at the vapour-facing tips of the individual nanotubes and is halted by contact with the isothermal substrate. The radial structures are the dominant product and the reaction conditions are self-sustaining. Ferrocene pyrolysis yields three common components in the nanowire encapsulated by multiwall carbon nanotubes, Fe3C, α-Fe, and γ-Fe. Magnetic tuning in this system can be achieved through the magnetocrystalline and shape anisotropies of the encapsulated nanowire. Here we demonstrate proof that alloying of the encapsulated nanowire is an additional approach to tuning of the magnetic properties of these structures by synthesis of radial-carbon-nanotube structures with γ-FeNi encapsulated nanowires.

  15. N-type crystalline silicon films free of amorphous silicon deposited on glass by HCl addition using hot wire chemical vapour deposition.

    Science.gov (United States)

    Chung, Yung-Bin; Park, Hyung-Ki; Lee, Sang-Hoon; Song, Jean-Ho; Hwang, Nong-Moon

    2011-09-01

    Since n-type crystalline silicon films have the electric property much better than those of hydrogenated amorphous and microcrystalline silicon films, they can enhance the performance of advanced electronic devices such as solar cells and thin film transistors (TFTs). Since the formation of amorphous silicon is unavoidable in the low temperature deposition of microcrystalline silicon on a glass substrate at temperatures less than 550 degrees C in the plasma-enhanced chemical vapour deposition and hot wire chemical vapour deposition (HWCVD), crystalline silicon films have not been deposited directly on a glass substrate but fabricated by the post treatment of amorphous silicon films. In this work, by adding the HCl gas, amorphous silicon-free n-type crystalline silicon films could be deposited directly on a glass substrate by HWCVD. The resistivity of the n-type crystalline silicon film for the flow rate ratio of [HCl]/[SiH4] = 7.5 and [PH3]/[SiH4] = 0.042 was 5.31 x 10(-4) ohms cm, which is comparable to the resistivity 1.23 x 10(-3) ohms cm of films prepared by thermal annealing of amorphous silicon films. The absence of amorphous silicon in the film could be confirmed by high resolution transmission electron microscopy.

  16. Heat stress in chemical protective clothing: Porosity and vapour resistance

    NARCIS (Netherlands)

    Havenith, G.; Hartog, E.A. den; Martini, S.

    2011-01-01

    Heat strain in chemical protective clothing is an important factor in industrial and military practice. Various improvements to the clothing to alleviate strain while maintaining protection have been attempted. More recently, selectively permeable membranes have been introduced to improve

  17. Heat stress in chemical protective clothing: Porosity and vapour resistance

    NARCIS (Netherlands)

    Havenith, G.; Hartog, E.A. den; Martini, S.

    2011-01-01

    Heat strain in chemical protective clothing is an important factor in industrial and military practice. Various improvements to the clothing to alleviate strain while maintaining protection have been attempted. More recently, selectively permeable membranes have been introduced to improve protection

  18. Mechanical and piezoresistive properties of thin silicon films deposited by plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition at low substrate temperatures

    Science.gov (United States)

    Gaspar, J.; Gualdino, A.; Lemke, B.; Paul, O.; Chu, V.; Conde, J. P.

    2012-07-01

    This paper reports on the mechanical and piezoresistance characterization of hydrogenated amorphous and nanocrystalline silicon thin films deposited by hot-wire chemical vapor deposition (HWCVD) and radio-frequency plasma-enhanced chemical vapor deposition (PECVD) using substrate temperatures between 100 and 250 °C. The microtensile technique is used to determine film properties such as Young's modulus, fracture strength and Weibull parameters, and linear and quadratic piezoresistance coefficients obtained at large applied stresses. The 95%-confidence interval for the elastic constant of the films characterized, 85.9 ± 0.3 GPa, does not depend significantly on the deposition method or on film structure. In contrast, mean fracture strength values range between 256 ± 8 MPa and 600 ± 32 MPa: nanocrystalline layers are slightly stronger than their amorphous counterparts and a pronounced increase in strength is observed for films deposited using HWCVD when compared to those grown by PECVD. Extracted Weibull moduli are below 10. In terms of piezoresistance, n-doped radio-frequency nanocrystalline silicon films deposited at 250 °C present longitudinal piezoresistive coefficients as large as -(2.57 ± 0.03) × 10-10 Pa-1 with marginally nonlinear response. Such values approach those of crystalline silicon and of polysilicon layers deposited at much higher temperatures.

  19. Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

    Science.gov (United States)

    Naito, Teruki; Konno, Nobuaki; Yoshida, Yukihisa

    2016-07-01

    Open air silicon deposition was performed by combining silane-free atmospheric pressure plasma-enhanced chemical transport and a newly developed local ambient gas control technology. The effect of air contamination on silicon deposition was investigated using a vacuum chamber, and the allowable air contamination level was confirmed to be 3 ppm. The capability of the local ambient gas control head was investigated numerically and experimentally. A safe and clean process environment with air contamination less than 1 ppm was achieved. Combining these technologies, a microcrystalline silicon film was deposited in open air, the properties of which were comparable to those of silicon films deposited in a vacuum chamber.

  20. Electron energy-loss spectroscopy analysis of low-temperature plasma-enhanced chemically vapor deposited a-C:H films

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, A.J.; Benson, D.K.; Tracy, C.E.; Kazmerski, L.L.; Wager, J.F.

    1989-05-01

    Electron energy-loss spectroscopy (EELS) has been applied to the analysis of a-C:H films grown on various substrates by a unique low-temperature (<100 /sup 0/C) plasma-enhanced chemical vapor deposition (PECVD) process using ethylene and hydrogen gases. EELS data are used to characterize the relative amounts of fourfold coordinated sp/sup 3/ carbon bonding to threefold coordinated sp/sup 2/ carbon bonding as well as the relative order/disorder due to substrate effects. Ellipsometric and transmission measurements provide optical constants for the PECVD a-C:H films.

  1. Synthesis of few-layer graphene on a Ni substrate by using DC plasma enhanced chemical vapor deposition (PE-CVD)

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jeong Hyuk; Castro, Edward Joseph; Hwang, Yong Gyoo; Lee, Choong Hun [Wonkwang University, Iksan (Korea, Republic of)

    2011-01-15

    In this work, few-layer graphene (FLG) was successfully grown on polycrystalline Ni a large scale by using DC plasma enhanced chemical vapor deposition (DC PE-CVD), which may serve as an alternative route in large-scale graphene synthesis. The synthesis time had an effect on the quality of the graphene produced. The applied DC voltage, on the other hand, influenced the minimization of the defect densities in the graphene grown. We also present a method of producing a free-standing polymethyl methacrylate (PMMA)/graphene membrane on a FeCl{sub 3(aq)} solution, which could then be transferred to the desired substrate.

  2. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

    OpenAIRE

    2016-01-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from R...

  3. Purification of Single-walled Carbon Nanotubes Grown by a Chemical Vapour Deposition (CVD) Method

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A procedure for purification of single-walled carbon nanotubes(SWNTs) grown by the chemical vapour deposition (CVD) of carbon monooxide has been developed. Based on the result from TGA/DTA of as-prepared sample, the oxidation temperature was determined. The process included sonication, oxidation and acid washing steps. The purity and yield after purification were determined and estimated by TEM. Moreover, for the first time, a loop structure for CVD SWNTs has been observed.

  4. Synthesis of thin films in boron-carbon-nitrogen ternary system by microwave plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Kukreja, Ratandeep Singh

    The Boron Carbon Nitorgen (B-C-N) ternary system includes materials with exceptional properties such as wide band gap, excellent thermal conductivity, high bulk modulus, extreme hardness and transparency in the optical and UV range that find application in most fields ranging from micro-electronics, bio-sensors, and cutting tools to materials for space age technology. Interesting materials that belong to the B-C-N ternary system include Carbon nano-tubes, Boron Carbide, Boron Carbon Nitride (B-CN), hexagonal Boron Nitride ( h-BN), cubic Boron Nitride (c-BN), Diamond and beta Carbon Nitride (beta-C3N4). Synthesis of these materials requires precisely controlled and energetically favorable conditions. Chemical vapor deposition is widely used technique for deposition of thin films of ceramics, metals and metal-organic compounds. Microwave plasma enhanced chemical vapor deposition (MPECVD) is especially interesting because of its ability to deposit materials that are meta-stable under the deposition conditions, for e.g. diamond. In the present study, attempt has been made to synthesize beta-carbon nitride (beta-C3N4) and cubic-Boron Nitride (c-BN) thin films by MPECVD. Also included is the investigation of dependence of residual stress and thermal conductivity of the diamond thin films, deposited by MPECVD, on substrate pre-treatment and deposition temperature. Si incorporated CNx thin films are synthesized and characterized while attempting to deposit beta-C3N4 thin films on Si substrates using Methane (CH4), Nitrogen (N2), and Hydrogen (H2). It is shown that the composition and morphology of Si incorporated CNx thin film can be tailored by controlling the sequence of introduction of the precursor gases in the plasma chamber. Greater than 100mum size hexagonal crystals of N-Si-C are deposited when Nitrogen precursor is introduced first while agglomerates of nano-meter range graphitic needles of C-Si-N are deposited when Carbon precursor is introduced first in the

  5. Metallo–organic compound-based plasma enhanced CVD of ZrO2 films for microelectronic applications

    Indian Academy of Sciences (India)

    S Chatterjee; S K Samanta; H D Banerjee; C K Maiti

    2001-12-01

    ZrO2 films on silicon wafer were deposited by microwave plasma enhanced chemical vapour deposition technique using zirconium tetratert butoxide (ZTB). The structure and composition of the deposited layers were studied by fourier transform infrared spectroscopy (FTIR). The deposition rates were also studied. MOS capacitors fabricated using deposited oxides were used to characterize the electrical properties of ZrO2 films. The films showed their suitability for microelectronic applications.

  6. Evaluation of niobium dimethylamino-ethoxide for chemical vapour deposition of niobium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dabirian, Ali [Laboratory for Photonic Materials and Characterization, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 17, 1015 Lausanne (Switzerland); Kuzminykh, Yury, E-mail: yury.kuzminykh@empa.ch [Laboratory for Photonic Materials and Characterization, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 17, 1015 Lausanne (Switzerland); Laboratory for Advanced Materials Processing, Empa, Swiss Federal Laboratories for Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun (Switzerland); Wagner, Estelle; Benvenuti, Giacomo [3D-Oxides, 70 Rue G. Eiffel Technoparc, 01630 St Genis Pouilly (France); ABCD Technology, 12 route de Champ-Colin, 1260 Nyon (Switzerland); Rushworth, Simon [Tyndall National Institute, Lee Maltings, Dyke Parade, Cork (Ireland); Hoffmann, Patrik, E-mail: patrik.hoffmann@empa.ch [Laboratory for Photonic Materials and Characterization, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 17, 1015 Lausanne (Switzerland); Laboratory for Advanced Materials Processing, Empa, Swiss Federal Laboratories for Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun (Switzerland)

    2014-11-28

    Chemical vapour deposition (CVD) processes depend on the availability of suitable precursors. Precursors that deliver a stable vapour pressure are favourable in classical CVD processes, as they ensure process reproducibility. In high vacuum CVD (HV-CVD) process vapour pressure stability of the precursor is of particular importance, since no carrier gas assisted transport can be used. The dimeric Nb{sub 2}(OEt){sub 10} does not fulfil this requirement since it partially dissociates upon heating. Dimethylamino functionalization of an ethoxy ligand of Nb(OEt){sub 5} acts as an octahedral field completing entity and leads to Nb(OEt){sub 4}(dmae). We show that Nb(OEt){sub 4}(dmae) evaporates as monomeric molecule and ensures a stable vapour pressure and, consequently, stable flow. A set of HV-CVD experiments were conducted using this precursor by projecting a graded molecular beam of the precursor onto the substrate at deposition temperatures from 320 °C to 650 °C. Film growth rates ranging from 8 nm·h{sup −1} to values larger than 400 nm·h{sup −1} can be obtained in this system illustrating the high level of control available over the film growth process. Classical CVD limiting conditions along with the recently reported adsorption–reaction limited conditions are observed and the chemical composition, and microstructural and optical properties of the films are related to the corresponding growth regime. Nb(OEt){sub 4}(dmae) provides a large process window of deposition temperatures and precursor fluxes over which carbon-free and polycrystalline niobium oxide films with growth rates proportional to precursor flux are obtained. This feature makes Nb(OEt){sub 4}(dmae) an attractive precursor for combinatorial CVD of niobium containing complex oxide films that are finding an increasing interest in photonics and photoelectrochemical water splitting applications. The adsorption–reaction limited conditions provide extremely small growth rates comparable to an

  7. Single liquid-source plasma enhanced metalorganic chemical vapor deposition of YBa sub 2 Cu sub 3 O sub 7-x thin films. Technical report

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, J.; Gardiner, R.; Kirlin, P.S.; Boerstler, R.W.; Steinbeck, J.

    1992-07-29

    High quality YBa2Cu3O7-x films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd)n, (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction. measurements indicated that single phase, highly c-axis oriented YBa2Cu3O7-x was formed in-situ at a substrate temperature 680 degC. The as-deposited films exhibited a mirror-like surface, had transition temperature Tc = 89 K, Delta Tc < 1K, and Jc(77K) = 106 A/cm2. Plasma enhanced metalorganic chemical vapor deposition, YBCO, superconductors.

  8. Transport mechanisms through PE-CVD coatings: influence of temperature, coating properties and defects on permeation of water vapour

    Science.gov (United States)

    Kirchheim, Dennis; Jaritz, Montgomery; Mitschker, Felix; Gebhard, Maximilian; Brochhagen, Markus; Hopmann, Christian; Böke, Marc; Devi, Anjana; Awakowicz, Peter; Dahlmann, Rainer

    2017-03-01

    Gas transport mechanisms through plastics are usually described by the temperature-dependent Arrhenius-model and compositions of several plastic layers are represented by the CLT. When it comes to thin films such as plasma-enhanced chemical vapour deposition (PE-CVD) or plasma-enhanced atomic layer deposition (PE-ALD) coatings on substrates of polymeric material, a universal model is lacking. While existing models describe diffusion through defects, these models presume that permeation does not occur by other means of transport mechanisms. This paper correlates the existing transport models with data from water vapour transmission experiments.

  9. Fabrication of complex oxide microstructures by combinatorial chemical beam vapour deposition through stencil masks

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, E. [3D-OXIDES, 70 rue Gustave Eiffel, Saint Genis Pouilly 01630 (France); Sandu, C.S., E-mail: cosmin.sandu@3d-oxides.com [3D-OXIDES, 70 rue Gustave Eiffel, Saint Genis Pouilly 01630 (France); Laboratoire de Céramique, Ecole Polytechnique Fédérale de Lausanne, Station 12, CH-1015 Lausanne (Switzerland); Harada, S.; Benvenuti, G. [3D-OXIDES, 70 rue Gustave Eiffel, Saint Genis Pouilly 01630 (France); Savu, V. [Laboratoire de Microsystèmes 1, Ecole Polytechnique Fédérale de Lausanne, Station 17, CH-1015 Lausanne (Switzerland); Muralt, P. [Laboratoire de Céramique, Ecole Polytechnique Fédérale de Lausanne, Station 12, CH-1015 Lausanne (Switzerland)

    2015-07-01

    Chemical Beam Vapour Deposition is a gas phase deposition technique, operated under high vacuum conditions, in which evaporated chemical precursors are thermally decomposed on heated substrates to form a film. In the particular equipment used in this work, different chemical beams effuse from a plurality of punctual precursor sources with line of sight trajectory to the substrate. A shadow mask is used to produce 3D-structures in a single step, replicating the apertures of a stencil as deposits on the substrate. The small gap introduced between substrate and mask induces a temperature difference between both surfaces and is used to deposit selectively solely on the substrate without modifying the mask, taking advantage of the deposition rate dependency on temperature. This small gap also enables the deposition of complex patterned structures resulting from the superposition of many patterns obtained using several precursor beams from different directions through a single mask aperture. A suitable process parameter window for precursor flow and substrate temperature is evidenced to maximize resolution. - Highlights: • Micro-feature growth with stencil mask by Chemical Beam Vapour Deposition • Growth of complex structured oxide films in one step • The gap between substrate and mask avoids deposition on the stencil. • Fabrication of 3D structures by superposing deposits from several beams • The versatile setup combines few chemical beams, variable geometry and stencil mask patterns.

  10. Preparation of Aligned Ultra-long and Diameter-controlled Silicon Oxide Nanotubes by Plasma Enhanced Chemical Vapor Deposition Using Electrospun PVP Nanofiber Template

    Directory of Open Access Journals (Sweden)

    Zhou Ming

    2009-01-01

    Full Text Available Abstract Well-aligned and suspended polyvinyl pyrrolidone (PVP nanofibers with 8 mm in length were obtained by electrospinning. Using the aligned suspended PVP nanofibers array as template, aligned ultra-long silicon oxide (SiOx nanotubes with very high aspect ratios have been prepared by plasma-enhanced chemical vapor deposition (PECVD process. The inner diameter (20–200 nm and wall thickness (12–90 nm of tubes were controlled, respectively, by baking the electrospun nanofibers and by coating time without sacrificing the orientation degree and the length of arrays. The micro-PL spectrum of SiOx nanotubes shows a strong blue–green emission with a peak at about 514 nm accompanied by two shoulders around 415 and 624 nm. The blue–green emission is caused by the defects in the nanotubes.

  11. Tensile test of a silicon microstructure fully coated with submicrometer-thick diamond like carbon film using plasma enhanced chemical vapor deposition method

    Science.gov (United States)

    Zhang, Wenlei; Uesugi, Akio; Hirai, Yoshikazu; Tsuchiya, Toshiyuki; Tabata, Osamu

    2017-06-01

    This paper reports the tensile properties of single-crystal silicon (SCS) microstructures fully coated with sub-micrometer thick diamond like carbon (DLC) film using plasma enhanced chemical vapor deposition (PECVD). To minimize the deformations or damages caused by non-uniform coating of DLC, which has high compression residual stress, released SCS specimens with the dimensions of 120 µm long, 4 µm wide, and 5 µm thick were coated from the top and bottom side simultaneously. The thickness of DLC coating is around 150 nm and three different bias voltages were used for deposition. The tensile strength improved from 13.4 to 53.5% with the increasing of negative bias voltage. In addition, the deviation in strength also reduced significantly compared to bare SCS sample.

  12. Effect of residual stresses on the strength, adhesion and wear resistance of SiC coatings obtained by plasma-enhanced chemical vapor deposition on low alloy steel

    Energy Technology Data Exchange (ETDEWEB)

    Kattamis, T.Z. (Department of Metallurgy, Institute of Materials Science, University of Connecticut, Storrs, CT 06269-3136 (United States)); Chen, M. (Department of Metallurgy, Institute of Materials Science, University of Connecticut, Storrs, CT 06269-3136 (United States)); Skolianos, S. (Aristoteles University, Thessaloniki (Greece)); Chambers, B.V. (Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States))

    1994-11-01

    Amorphous hydrogenated silicon carbide thin coatings were deposited on AISI 4340 low alloy steel wafers and thicker steel specimens by plasma-enhanced chemical vapor deposition. The cohesion of the coating, its adhesion to the substrate and its friction coefficient were evaluated by automatic scratch testing, and its wear resistance by pin-on-disk tribometry. During annealing, the residual stress attributed to hydrogen entrapment during deposition gradually changed from compressive to tensile and its rate of increase decreased with increasing annealing time. The cohesion and adhesion failure loads and the abrasive wear resistance decreased with decreasing residual compressive stress and increasing residual tensile stress. The friction coefficient between the coating surface and a diamond stylus decreased with increasing annealing time. ((orig.))

  13. Co3O4 protective coatings prepared by Pulsed Injection Metal Organic Chemical Vapour Deposition

    DEFF Research Database (Denmark)

    Burriel, M.; Garcia, G.; Santiso, J.

    2005-01-01

    Cobalt oxide films were grown by Pulsed Injection Metal Organic Chemical Vapour Deposition (PI-MOCVD) using Co(acac)(3) (acac=acetylacetonate) precursor dissolved in toluene. The structure, morphology and growth rate of the layers deposited on silicon substrates were studied as a function...... of deposition temperature. Pure Co3O4 spinel structure was found for deposition temperatures ranging from 360 to 540 degreesC. The optimum experimental parameters to prepare dense layers with a high growth rate were determined and used to prepare corrosion protective coatings for Fe-22Cr metallic interconnects...

  14. Amorphous silicon carbon films prepared by hybrid plasma enhanced chemical vapor/sputtering deposition system: Effects of r.f. power

    Energy Technology Data Exchange (ETDEWEB)

    Rashid, Nur Maisarah Abdul, E-mail: nurmaisarahrashid@gmail.com [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ritikos, Richard; Othman, Maisara; Khanis, Noor Hamizah; Gani, Siti Meriam Ab. [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Muhamad, Muhamad Rasat [Chancellery Office, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Rahman, Saadah Abdul, E-mail: saadah@um.edu.my [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Chancellery Office, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)

    2013-02-01

    Silicon carbon films were deposited using a hybrid radio frequency (r.f.) plasma enhanced chemical vapor deposition (PECVD)/sputtering deposition system at different r.f. powers. This deposition system combines the advantages of r.f. PECVD and sputtering techniques for the deposition of silicon carbon films with the added advantage of eliminating the use of highly toxic silane gas in the deposition process. Silicon (Si) atoms were sputtered from a pure amorphous silicon (a-Si) target by argon (Ar) ions and carbon (C) atoms were incorporated into the film from C based growth radicals generated through the discharge of methane (CH{sub 4}) gas. The effects of r.f. powers of 60, 80, 100, 120 and 150 W applied during the deposition process on the structural and optical properties of the films were investigated. Raman spectroscopic studies showed that the silicon carbon films contain amorphous silicon carbide (SiC) and amorphous carbon (a-C) phases. The r.f. power showed significant influence on the C incorporation in the film structure. The a-C phases became more ordered in films with high C incorporation in the film structure. These films also produced high photoluminescence emission intensity at around 600 nm wavelength as a result of quantum confinement effects from the presence of sp{sup 2} C clusters embedded in the a-SiC and a-C phases in the films. - Highlights: ► Effects of radio frequency (r.f.) power on silicon carbon (SiC) films were studied. ► Hybrid plasma enhanced chemical vapor deposition/sputtering technique was used. ► r.f. power influences C incorporation in the film structure. ► High C incorporation results in higher ordering of the amorphous C phase. ► These films produced high photoluminescence emission intensity.

  15. Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

    Energy Technology Data Exchange (ETDEWEB)

    Ghrib, M., E-mail: mondherghrib@yahoo.fr [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Gaidi, M.; Ghrib, T.; Khedher, N. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Ben Salam, M. [L3M, Department of Physics, Faculty of Sciences of Bizerte, 7021 Zarzouna (Tunisia); Ezzaouia, H. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

    2011-08-15

    Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

  16. Zinc oxide nanostructures by chemical vapour deposition as anodes for Li-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Laurenti, M., E-mail: marco.laurenti@iit.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Department of Applied Science and Technology – DISAT, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin (Italy); Garino, N. [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Porro, S.; Fontana, M. [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Department of Applied Science and Technology – DISAT, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin (Italy); Gerbaldi, C., E-mail: claudio.gerbaldi@polito.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Department of Applied Science and Technology – DISAT, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin (Italy)

    2015-08-15

    Highlights: • ZnO nanostructures are grown by simple chemical vapour deposition. • Polycrystalline nanostructured porous thin film is obtained. • Film exhibits stable specific capacity (∼400 mA h g{sup −1}) after prolonged cycling. • CVD-grown ZnO nanostructures show promising prospects as Li-ion battery anode. - Abstract: ZnO nanostructures are grown by a simple chemical vapour deposition method directly on a stainless steel disc current collector and successfully tested in lithium cells. The structural/morphological characterization points out the presence of well-defined polycrystalline nanostructures having different shapes and a preferential orientation along the c-axis direction. In addition, the high active surface of the ZnO nanostructures, which accounts for a large electrode/electrolyte contact area, and the complete wetting with the electrolyte solution are considered to be responsible for the good electrical transport properties and the adequate electrochemical behaviour, as confirmed by cyclic voltammetry and galvanostatic charge/discharge cycling. Indeed, despite no binder or conducting additives are used, when galvanostatically tested in lithium cells, after an initial decay, the ZnO nanostructures can provide a rather stable specific capacity approaching 70 μA h cm{sup −2} (i.e., around 400 mA h g{sup −1}) after prolonged cycling at 1 C, with very high Coulombic efficiency and an overall capacity retention exceeding 62%.

  17. Characterization of Si:O:C:H films fabricated using electron emission enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Durrant, Steven F. [Laboratorio de Plasmas Tecnologicos, Campus Experimental de Sorocaba, Universidade Estadual Paulista-UNESP, Avenida Tres de Marco, 511, Alto da Boa Vista, 18087-180, Soracaba, SP (Brazil)], E-mail: steve@sorocaba.unesp.br; Rouxinol, Francisco P.M.; Gelamo, Rogerio V. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil); Trasferetti, B. Claudio [Present address: Superintendencia Regional da Policia Federal em Sao Paulo, Setor Tecnico-Cientifico, Rua Hugo d' Antola 95/10o Andar, Lapa de Baixo, 05038-090 Sao Paulo, SP (Brazil); Davanzo, C.U. [Instituto de Quimica, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil); Bica de Moraes, Mario A. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, 13083-970, Campinas, SP (Brazil)

    2008-01-15

    Silicon-based polymers and oxides may be formed when vapours of oxygen-containing organosilicone compounds are exposed to energetic electrons drawn from a hot filament by a bias potential applied to a second electrode in a controlled atmosphere in a vacuum chamber. As little deposition occurs in the absence of the bias potential, electron impact fragmentation is the key mechanism in film fabrication using electron-emission enhanced chemical vapour deposition (EEECVD). The feasibility of depositing amorphous hydrogenated carbon films also containing silicon from plasmas of tetramethylsilane or hexamethyldisiloxane has already been shown. In this work, we report the deposition of diverse films from plasmas of tetraethoxysilane (TEOS)-argon mixtures and the characterization of the materials obtained. The effects of changes in the substrate holder bias (V{sub S}) and of the proportion of TEOS in the mixture (X{sub T}) on the chemical structure of the films are examined by infrared-reflection absorption spectroscopy (IRRAS) at near-normal and oblique incidence using unpolarised and p-polarised, light, respectively. The latter is particularly useful in detecting vibrational modes not observed when using conventional near-normal incidence. Elemental analyses of the film were carried out by X-ray photoelectron spectroscopy (XPS), which was also useful in complementary structural investigations. In addition, the dependencies of the deposition rate on V{sub S} and X{sub T} are presented.

  18. Comparison of laser-ablation and hot-wall chemical vapour deposition techniques for nanowire fabrication

    Science.gov (United States)

    Stern, E.; Cheng, G.; Guthrie, S.; Turner-Evans, D.; Broomfield, E.; Lei, B.; Li, C.; Zhang, D.; Zhou, C.; Reed, M. A.

    2006-06-01

    A comparison of the transport properties of populations of single-crystal, In2O3 nanowires (NWs) grown by unassisted hot-wall chemical vapour deposition (CVD) versus NWs grown by laser-ablation-assisted chemical vapour deposition (LA-CVD) is presented. For nominally identical growth conditions across the two systems, NWs fabricated at 850 °C with laser-ablation had significantly higher average mobilities at the 99.9% confidence level, 53.3 ± 5.8 cm2 V-1 s-1 versus 10.2 ± 1.9 cm2 V-1 s-1. It is also observed that increasing growth temperature decreases mobility for LA-CVD NWs. Transmission electron microscopy studies of CVD-fabricated samples indicate the presence of an amorphous In2O3 region surrounding the single-crystal core. Further, low-temperature measurements verify the presence of ionized impurity scattering in low-mobility CVD-grown NWs.

  19. Direct Fabrication of Carbon Nanotubes STM Tips by Liquid Catalyst-Assisted Microwave Plasma-Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Fa-Kuei Tung

    2009-01-01

    Full Text Available Direct and facile method to make carbon nanotube (CNT tips for scanning tunneling microscopy (STM is presented. Cobalt (Co particles, as catalysts, are electrochemically deposited on the apex of tungsten (W STM tip for CNT growth. It is found that the quantity of Co particles is well controlled by applied DC voltage, concentration of catalyst solution, and deposition time. Using optimum growth condition, CNTs are successfully synthesized on the tip apex by catalyst-assisted microwave-enhanced chemical vapor deposition (CA-MPECVD. A HOPG surface is clearly observed at an atomic scale using the present CNT-STM tip.

  20. Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings

    Directory of Open Access Journals (Sweden)

    Januś M.

    2015-06-01

    Full Text Available Plasma Assisted Chemical Vapour Deposition (PA CVD method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy and improving of the wear resistance (in the case of PEEK substrate.

  1. Magnetic and cytotoxic properties of hot-filament chemical vapour deposited diamond

    Energy Technology Data Exchange (ETDEWEB)

    Zanin, Hudson, E-mail: hudsonzanin@gmail.com [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil); Peterlevitz, Alfredo Carlos; Ceragioli, Helder Jose [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil); Rodrigues, Ana Amelia; Belangero, William Dias [Laboratorio de Biomateriais em Ortopedia, Faculdade de Ciencias Medicas, Universidade Estadual de Campinas, Rua Cinco de Junho 350 CEP 13083970, Campinas, Sao Paulo (Brazil); Baranauskas, Vitor [Faculdade de Engenharia Eletrica e Computacao, Departamento de Semicondutores, Instrumentos e Fotonica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N.400, CEP 13 083-852 Campinas, Sao Paulo (Brazil)

    2012-12-01

    Microcrystalline (MCD) and nanocrystalline (NCD) magnetic diamond samples were produced by hot-filament chemical vapour deposition (HFCVD) on AISI 316 substrates. Energy Dispersive X-ray Spectroscopy (EDS) measurements indicated the presence of Fe, Cr and Ni in the MCD and NCD samples, and all samples showed similar magnetisation properties. Cell viability tests were realised using Vero cells, a type of fibroblastic cell line. Polystyrene was used as a negative control for toxicity (NCT). The cells were cultured under standard cell culture conditions. The proliferation indicated that these magnetic diamond samples were not cytotoxic. - Highlights: Black-Right-Pointing-Pointer Polycrystalline diamonds doped with Fe, Cr and Ni acquire ferromagnetic properties. Black-Right-Pointing-Pointer CVD diamonds have been prepared with magnetic and semiconductor properties. Black-Right-Pointing-Pointer Micro/nanocrystalline diamonds show good cell viability with fibroblast proliferation.

  2. Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Jun-Shuai; WANG Jin-Xiao; YIN Min; GAO Ping-Qi; HE De-Yan

    2006-01-01

    Polycrystalline Si (poly-Si) films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350 C. Compared to the traditional annealing crystallization of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of Al atoms are detected in Si layer within the limit (< 0.01 at. %) of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.

  3. Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Mohammad Afzaal

    2016-10-01

    Full Text Available In this work, the impact of translation rates in fluorine doped tin oxide (FTO thin films using atmospheric pressure chemical vapour deposition (APCVD were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the growth rates of the FTO films varied and hence many of the film properties were modified. X-ray powder diffraction showed an increased preferred orientation along the (200 plane at higher translation rates, although with no actual change in the particle sizes. A reduction in dopant level resulted in decreased particle sizes and a much greater degree of (200 preferred orientation. For low dopant concentration levels, atomic force microscope (AFM studies showed a reduction in roughness (and lower optical haze with increased translation rate and decreased growth rates. Electrical measurements concluded that the resistivity, carrier concentration, and mobility of films were dependent on the level of fluorine dopant, the translation rate and hence the growth rates of the deposited films.

  4. Optimization of process parameter for synthesis of silicon quantum dots using low pressure chemical vapour deposition

    Indian Academy of Sciences (India)

    Dipika Barbadikar; Rashmi Gautam; Sanjay Sahare; Rajendra Patrikar; Jatin Bhatt

    2013-06-01

    Si quantum dots-based structures are studied recently for performance enhancement in electronic devices. This paper presents an attempt to get high density quantum dots (QDs) by low pressure chemical vapour deposition (LPCVD) on SiO2 substrate. Surface treatment, annealing and rapid thermal processing (RTP) are performed to study their effect on size and density of QDs. The samples are also studied using Fourier transformation infrared spectroscopy (FTIR), atomic force microscopy (AFM), scanning electron microscopy (SEM) and photoluminescence study (PL). The influence of Si–OH bonds formed due to surface treatment on the density of QDs is discussed. Present study also discusses the influence of surface treatment and annealing on QD formation.

  5. Low resistance polycrystalline diamond thin films deposited by hot filament chemical vapour deposition

    Indian Academy of Sciences (India)

    Mahtab Ullah; Ejaz Ahmed; Abdelbary Elhissi; Waqar Ahmed

    2014-05-01

    Polycrystalline diamond thin films with outgrowing diamond (OGD) grains were deposited onto silicon wafers using a hydrocarbon gas (CH4) highly diluted with H2 at low pressure in a hot filament chemical vapour deposition (HFCVD) reactor with a range of gas flow rates. X-ray diffraction (XRD) and SEM showed polycrystalline diamond structure with a random orientation. Polycrystalline diamond films with various textures were grown and (111) facets were dominant with sharp grain boundaries. Outgrowth was observed in flowerish character at high gas flow rates. Isolated single crystals with little openings appeared at various stages at low gas flow rates. Thus, changing gas flow rates had a beneficial influence on the grain size, growth rate and electrical resistivity. CVD diamond films gave an excellent performance for medium film thickness with relatively low electrical resistivity and making them potentially useful in many industrial applications.

  6. Investigation of Chemical-Vapour-Deposition Diamond Alpha-Particle Detectors

    Institute of Scientific and Technical Information of China (English)

    GU Bei-Bei; WANG Lin-Jun; ZHANG Ming-Long; XIA Yi-Ben

    2004-01-01

    Diamond films with [100] texture were prepared by a hot-filament chemical vapour deposition technique to fabricate particle detectors. The response of detectors to 5.5 MeV 241 Am particles is studied. The photocurrent increases linearly and then levels off with voltage, and 7hA is obtained at bias voltage of 100 V. The timedependent photocurrent initially increases rapidly and then tends to reach saturation. Furthermore, a little increase of the dark-current after irradiation can be accounted for by the release of the charges captured by the trapping centres at low energy levels during irradiation. An obvious peak of the pulse height distribution can be observed, associated with the energy of 5.5 MeV.

  7. High Resistive ZnO/Diamond/Si Films Grown via Metal-organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YANG Hong-jun; ZHAO Bai-jun; FANG Xiu-jun; DU Guo-tong; LIU Da-li; GAO Chun-xiao; LIU Xi-zhe

    2005-01-01

    Piezoelectric ZnO layers with high resistivity for surface acoustic wave applications were prepared on polycrystalline diamond/Si substrates with (111) orientation via metal-organic chemical vapour deposition.The characteristics of the films were optimized through different growth methods. The comparative study of the X-ray diffraction spectra and scanning electron microscopic images showed that the final-prepared ZnO films were dominantly c-axis oriented. Zn and O elements in the final prepared ZnO films were investigated through X-ray photoelectron spectroscopy. According to the statistical results, the n(Zn)/n(O) ratio is near 1. The Raman scattering was also performed in back scattering configuration. E2 mode was observed for the final films, which indicated that the better quality ZnO films had been obtained. The resistivity of the films was also enhanced via the modification of the growth methods.

  8. Chemical vapour deposition of tungsten and tungsten silicide layers for applications in novel silicon technology

    CERN Document Server

    Li, F X

    2002-01-01

    This work was a detailed investigation into the Chemical Vapour Deposition (CVD) of tungsten and tungsten silicide for potential applications in integrated circuit (IC) and other microelectronic devices. These materials may find novel applications in contact schemes for transistors in advanced ICs, buried high conductivity layers in novel Silicon-On-Insulator (SOI) technology and in power electronic devices. The CVD techniques developed may also be used for metal coating of recessed or enclosed features which may occur in novel electronic or electromechanical devices. CVD of tungsten was investigated using the silicon reduction reaction of WF sub 6. W layers with an optimum self-limiting thickness of 100 nm and resistivity 20 mu OMEGA centre dot cm were produced self-aligned to silicon. A hydrogen passivation technique was developed as part of the wafer pre-clean schedule and proved essential in achieving optimum layer thickness. Layers produced by this approach are ideal for intimate contact to shallow junct...

  9. Si nanowires grown by Al-catalyzed plasma-enhanced chemical vapor deposition: synthesis conditions, electrical properties and application to lithium battery anodes

    Science.gov (United States)

    Toan, Le Duc; Moyen, Eric; Zamfir, Mihai Robert; Joe, Jemee; Kim, Young Woo; Pribat, Didier

    2016-01-01

    Silicon nanowires have been synhesized using Al as a catalyst. Silane (SiH4) diluted in H2 carrier gas was employed as Si precursor in a plasma enhanced chemical vapor deposition system operated at various temperatures (450 °C and 550 °C). Those growth temperatures, which are lower than the eutectic temperature in the Al-Si system (577 °C) suggests a vapor-solid-solid growth mechanism. Four point resistance measurements and back-gated current-voltage measurements indicated that silicon nanowires were heavily doped (p type), with a doping concentration of a few 1019 cm-3. We have measured hole mobility values of ˜16 cm2 V-1 s-1 at 450 °C and ˜30 cm2 V-1 s-1 at 550 °C. Transmission electron microscope analyses showed that the silicon nanowires were highly twinned even when they grow epitaxially on (111) Si substrates. We have also evaluated the use of those highly doped Si nanowires for lithium-ion battery anodes. We have observed a good cycling behavior during the first 65 charge-discharge cycles, followed by a slow capacity decay. After 150 cycles at a charge-discharge rate of 0.1 C, the electrode capacity was still 1400 mAh g-1. The ageing mechanism seems to be related to the delamination of the SiNWs from the stainless steel substrate on which they were grown.

  10. Optical and morphological properties of SiN{sub x}/Si amorphous multilayer structures grown by Plasma Enhanced Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Santana, G.; Melo, O. de; Monroy, B.M.; Fandino, J.; Ortiz, A.; Alonso, J.C. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Cd. Universitaria, A.P. 70-360, Coyoacan (Mexico); Aguilar-Hernandez, J.; Cruz, F.; Contreras-Puentes, G. [Escuela Superior de Fisica y Matematicas del Instituto Politecnico Nacional; Edificio 9, U.P.A.L.M. (Mexico)

    2005-08-01

    Very thin layers of Si were grown in between silicon nitride layers using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique and SiH{sub 2}Cl{sub 2}/H{sub 2}/NH{sub 3} mixtures. Deposition conditions were selected to favor Si cluster formation. Room Temperature Photoluminescence (RT-PL) and optical transmission in different ranges were used to evaluate the optical and structural properties of the films. Scanning Electron Microscopy (SEM) of the cross section of cleaved samples allowed to observe a clear pattern of Si clusters embedded in the SiN matrix. The UV-VIS absorption spectra present two band edges. We assume that the higher band gap is due to the amorphous Si clusters. RT-PL spectra are characterized by two broad bands: one centered at 1.5 eV and the other at 2.1 eV. The broad luminescence centered at 2.1 eV could be associated with the higher band gap observed in absorption spectrum. After vacuum annealing of the samples at 400 and ordm;C, the band at 2.1 eV disappears. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Growth of Ge nanoparticles on SiO{sub 2}/Si interfaces during annealing of plasma enhanced chemical vapor deposited thin films

    Energy Technology Data Exchange (ETDEWEB)

    Foss, S. [Department of Physics, University of Oslo, PO Box 1048-Blindern, N-0316 (Norway)]. E-mail: stefoss@fys.uio.no; Finstad, T.G. [Department of Physics, University of Oslo, PO Box 1048-Blindern, N-0316 (Norway); Dana, A. [Department of Physics, Bilkent University, 06800 Ankara (Turkey); Aydinli, A. [Department of Physics, Bilkent University, 06800 Ankara (Turkey)

    2007-06-04

    Multilayer germanosilicate (Ge:SiO{sub 2}) films have been grown by plasma enhanced chemical vapor deposition. Each Ge:SiO{sub 2} layer is separated by a pure SiO{sub 2} layer. The samples were heat treated at 900 deg. C for 15 and 45 min. Transmission electron microscopy investigations show precipitation of particles in the layers of highest Ge concentration. Furthermore there is evidence of diffusion between the layers. This paper focuses mainly on observed growth of Ge particles close to the interface, caused by Ge diffusion from the Ge:SiO{sub 2} layer closest to the interface through a pure SiO{sub 2} layer and to the interface. The particles grow as spheres in a direction away from the interface. Particles observed after 15 min anneal time are 4 nm in size and are amorphous, while after 45 min anneal time they are 7 nm in size and have a crystalline diamond type Ge structure.

  12. Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high-quality YBa2Cu3O(7-x) thin films

    Science.gov (United States)

    Zhang, Jiming; Gardiner, Robin A.; Kirlin, Peter S.; Boerstler, Robert W.; Steinbeck, John

    1992-01-01

    High quality YBa2Cu3O(7-x) films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd) (sub n), (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa2Cu3O(7-x) was formed in-situ at substrate temperature 680 C. The as-deposited films exhibited a mirror-like surface, had transition temperature T(sub cO) approximately equal to 89 K, Delta T(sub c) less than 1 K, and Jc (77 K) = 10(exp 6) A/sq cm.

  13. Characterization of Plasma Enhanced Chemical Vapor Deposition-Physical Vapor Deposition transparent deposits on textiles to trigger various antimicrobial properties to food industry textiles

    Energy Technology Data Exchange (ETDEWEB)

    Brunon, Celine [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France); Chadeau, Elise; Oulahal, Nadia [Universite de Lyon, Universite Lyon 1, Laboratoire de Recherche en Genie Industriel Alimentaire (LRGIA, E.A. 3733), Rue Henri de Boissieu, F-01000 Bourg en Bresse (France); Grossiord, Carol [Science et Surface, 64, Chemin des Mouilles, F-69130 Ecully (France); Dubost, Laurent [HEF, ZI SUD, Rue Benoit Fourneyron, F-42166 Andrezieux Boutheon (France); Bessueille, Francois [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France); Simon, Farida [TDV Industrie, 43 Rue du Bas des Bois, BP 121, F-53012 Laval Cedex (France); Degraeve, Pascal [Universite de Lyon, Universite Lyon 1, Laboratoire de Recherche en Genie Industriel Alimentaire (LRGIA, E.A. 3733), Rue Henri de Boissieu, F-01000 Bourg en Bresse (France); Leonard, Didier, E-mail: didier.leonard@univ-lyon1.fr [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France)

    2011-07-01

    Textiles for the food industry were treated with an original deposition technique based on a combination of Plasma Enhanced Chemical Vapor Deposition and Physical Vapor Deposition to obtain nanometer size silver clusters incorporated into a SiOCH matrix. The optimization of plasma deposition parameters (gas mixture, pressure, and power) was focused on textile transparency and antimicrobial properties and was based on the study of both surface and depth composition (X-ray Photoelectron Spectroscopy (XPS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), as well as Transmission Electron Microscopy, Atomic Force Microscopy, SIMS depth profiling and XPS depth profiling on treated glass slides). Deposition conditions were identified in order to obtain a variable and controlled quantity of {approx} 10 nm size silver particles at the surface and inside of coatings exhibiting acceptable transparency properties. Microbiological characterization indicated that the surface variable silver content as calculated from XPS and ToF-SIMS data directly influences the level of antimicrobial activity.

  14. Properties of silicon nitride thin overlays deposited on optical fibers — Effect of fiber suspension in radio frequency plasma-enhanced chemical vapor deposition reactor

    Energy Technology Data Exchange (ETDEWEB)

    Śmietana, M., E-mail: M.Smietana@elka.pw.edu.pl [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, Warsaw 00-662 (Poland); Dominik, M.; Myśliwiec, M.; Kwietniewski, N. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, Warsaw 00-662 (Poland); Mikulic, P. [Centre de Recherche en Photonique, Université du Québec en Outaouais, 101 rue Saint-Jean-Bosco, Gatineau, J8X 3X7, Québec (Canada); Witkowski, B.S. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw 02-666 (Poland); Bock, W.J. [Centre de Recherche en Photonique, Université du Québec en Outaouais, 101 rue Saint-Jean-Bosco, Gatineau, J8X 3X7, Québec (Canada)

    2016-03-31

    This work discusses the effect of sample suspension in radio frequency plasma-enhanced chemical vapor deposition process on properties of the obtained overlays. Silicon nitride (SiN{sub x}) overlays were deposited on flat silicon wafers and cylindrical fused silica optical fibers. The influence of the suspension height and fiber diameter on SiN{sub x} deposition rate is investigated. It has been found that thickness of the SiN{sub x} overlay significantly increases with suspension height, and the deposition rate depends on fiber dimensions. Moreover, the SiN{sub x} overlays were also deposited on long-period gratings (LPGs) induced in optical fiber. Measurements of the LPG spectral response combined with its numerical simulations allowed for a discussion on properties of the deposited overlay. The measurements have proven higher overlay deposition rate on the suspended fiber than on flat Si wafer placed on the electrode. Results of this work are essential for precise tuning of the functional properties of new generations of optical devices such as optical sensors, filters and resonators, which typically are based on optical fibers and require the overlays with well defined properties. - Highlights: • The effect of optical fiber suspension in plasma process is discussed. • The deposition rate of silicon nitride (SiN{sub x}) overlay depends on fiber dimensions. • Thickness of the SiN{sub x} overlay strongly increases with suspension height. • Measurements and simulations of long-period grating confirms experimental results.

  15. Formation and characterization of the MgO protecting layer deposited by plasma-enhanced metal-organic chemical-vapor deposition

    CERN Document Server

    Kang, M S; Byun, J C; Kim, D S; Choi, C K; Lee, J Y; Kim, K H

    1999-01-01

    MgO films were prepared on Si(100) and soda-lime glass substrates by using plasma-enhanced metal-organic chemical-vapor deposition. Various ratios of the O sub 2 /CH sub 3 MgO sup t Bu gas mixture and various gas flow rates were tested for the film fabrications. Highly (100)-oriented MgO films with good crystallinity were obtained with a 10 sccm CH sub 3 MgO sup t Bu flow without an O sub 2 gas flow. About 5 % carbon was contained in all the MgO films. The refractive index and the secondary electron emission coefficient for the best quality film were 1.43 and 0.45, respectively. The sputtering rate was about 0.2 nm/min for 10 sup 1 sup 1 cm sup - sup 3 Ar sup + ion density. Annealing at 500 .deg. C in an Ar ambient promoted the grain size without inducing a phase transition.

  16. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  17. Characteristics of silicon nitride deposited by VHF (162 MHz)-plasma enhanced chemical vapor deposition using a multi-tile push-pull plasma source

    Science.gov (United States)

    Kim, Ki Seok; Sirse, Nishant; Kim, Ki Hyun; Rogers Ellingboe, Albert; Kim, Kyong Nam; Yeom, Geun Young

    2016-10-01

    To prevent moisture and oxygen permeation into flexible organic electronic devices formed on substrates, the deposition of an inorganic diffusion barrier material such as SiN x is important for thin film encapsulation. In this study, by a very high frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source, SiN x layers were deposited with a gas mixture of NH3/SiH4 with/without N2 and the characteristics of the plasma and the deposited SiN x film as the thin film barrier were investigated. Compared to a lower frequency (60 MHz) plasma, the VHF (162 MHz) multi-tile push-pull plasma showed a lower electron temperature, a higher vibrational temperature, and higher N2 dissociation for an N2 plasma. When a SiN x layer was deposited with a mixture of NH3/SiH4 with N2 at a low temperature of 100 °C, a stoichiometric amorphous Si3N4 layer with very low Si-H bonding could be deposited. The 300 nm thick SiN x film exhibited a low water vapor transmission rate of 1.18  ×  10-4 g (m2 · d)-1, in addition to an optical transmittance of higher than 90%.

  18. Impact of Hydrocarbon Control in Ultraviolet-Assisted Restoration Process for Extremely Porous Plasma Enhanced Chemical Vapor Deposition SiOCH Films with k = 2.0

    Science.gov (United States)

    Kimura, Yosuke; Ishikawa, Dai; Nakano, Akinori; Kobayashi, Akiko; Matsushita, Kiyohiro; de Roest, David; Kobayashi, Nobuyoshi

    2012-05-01

    We investigated the effects of UV-assisted restoration on porous plasma-enhanced chemical vapor deposition (PECVD) SiOCH films with k = 2.0 and 2.3 having high porosities. By applying the UV-assisted restoration to O2-plasma-damaged films with k = 2.0 and 2.3, the recovery of the k-value was observed on the k = 2.3 film in proportion to -OH group reduction. However, the k = 2.0 film did not show recovery in spite of -OH group reduction. We found that hydrocarbon content in the k = 2.0 film was significantly increased by the UV-assisted restoration compared with the k = 2.3 film. According to these findings, we optimized the UV-assisted restoration to achieve improved controllability of the hydrocarbon uptake in the k = 2.0 film and confirmed the recovery of the k-value for O2-plasma-damaged film. Thus, adjusting the hydrocarbon uptake was crucial for restoring extremely porous SiOCH film.

  19. Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high-quality YBa2Cu3O(7-x) thin films

    Science.gov (United States)

    Zhang, Jiming; Gardiner, Robin A.; Kirlin, Peter S.; Boerstler, Robert W.; Steinbeck, John

    1992-01-01

    High quality YBa2Cu3O(7-x) films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd) (sub n), (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa2Cu3O(7-x) was formed in-situ at substrate temperature 680 C. The as-deposited films exhibited a mirror-like surface, had transition temperature T(sub cO) approximately equal to 89 K, Delta T(sub c) less than 1 K, and Jc (77 K) = 10(exp 6) A/sq cm.

  20. Characterization of the SiO2 film deposited by using plasma enhanced chemical vapor deposition (PECVD with TEOS/N2/O2

    Directory of Open Access Journals (Sweden)

    Meysam Zarchi

    2013-12-01

    Full Text Available The purpose of this study was to examine how certain parameters like temperature, pressure, and gas composition affect the characteristics of SiO2 film by Plasma Enhanced Chemical Vapor Deposition (PECVD. We used of low temperature and an inductively coupled plasma (ICP for various with gas mixtures of TEOS/N2/O2 at a given RF power and dc bias voltage. For the gas mixture with 40 sccm of N2 in TEOS, 100 standard cubic centimeters per minute (sccm of N2, and 500 sccm of O2, transparent and scratch-resistant SiO2 could be deposited with a deposition rate of 30 nm/min when RF power of 500 W and a dc-bias voltage of 350V were applied. The characteristics of the deposited SiO2, such as the composition, the binding energy, etc. were compared with the SiO2 deposited by using thermal CVD and evaporation. It was found that the SiO2 deposited by PECVD with TEOS/N2/O2 exhibited properties typical of SiO2 deposited applying thermal CVD and evaporation. The surface roughness of the 100 nm-thick SiO2 deposited by PECVD was similar to that of the substrate.

  1. Plasma enhanced chemical vapor deposition of Cr{sub 2}O{sub 3} thin films using chromium hexacarbonyl (Cr(CO){sub 6}) precursor

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jinwen [Center for Materials for Information Technology and Department of Chemical and Biological Engineering, University of Alabama, Tuscaloosa, AL 35487 (United States)], E-mail: wang006@bama.ua.edu; Gupta, Arunava; Klein, Tonya M. [Center for Materials for Information Technology and Department of Chemical and Biological Engineering, University of Alabama, Tuscaloosa, AL 35487 (United States)

    2008-09-01

    Chromium oxide (Cr{sub 2}O{sub 3}) thin films have been deposited by plasma enhanced chemical vapor deposition on c-cut sapphire (Al{sub 2}O{sub 3}) and oxidized silicon substrates at temperatures between 250 and 400 deg. C using the precursor chromium hexacarbonyl (Cr(CO){sub 6}). The film growth rate ranges between 5 and 14 A/min, with the growth rate going through a maximum at 300 deg. C before decreasing at higher temperature, suggesting the presence of competing deposition and desorption reaction channels. Scanning electron microscope images indicate that the density of grains and film crystallinity increases with increasing substrate temperatures, while atomic force microscopy shows an overall decrease in film roughness with increasing temperature. Normal {theta} - 2{theta} Bragg X-ray diffraction results show that films deposited on SiO{sub 2} are polycrystalline, while those on sapphire have a preferred (0 0 0 l) orientation. The epitaxial nature of the film growth on Al{sub 2}O{sub 3} has been confirmed from the symmetry of off-axis X-ray scans.

  2. Tribological properties and thermal stability of hydrogenated, silicon/nitrogen-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Nakazawa, Hideki; Okuno, Saori; Magara, Kohei; Nakamura, Kazuki; Miura, Soushi; Enta, Yoshiharu

    2016-12-01

    We have deposited hydrogenated, silicon/nitrogen-incorporated diamond-like carbon (Si-N-DLC) films by plasma-enhanced chemical vapor deposition using hexamethyldisilazane [((CH3)3Si)2NH; HMDS] as the Si and N source, and compared the tribological performance and thermal stability of the Si-N-DLC films with those of hydrogenated, Si-incorporated DLC (Si-DLC) films prepared using dimethylsilane [SiH2(CH3)2] as the Si source. The deposited films were annealed at 723-873 K in air atmosphere. The friction coefficients of hydrogenated DLC films after annealing significantly increased at the initial stages of friction tests. On the other hand, the friction coefficients of the Si-N-DLC films deposited at an HMDS flow ratio [HMDS/(HMDS+CH4)] of 2.27% remained low after the annealing even at 873 K. We found that the wear rate of the Si-N-DLC film deposited at 2.27% and -1000 V remained almost unchanged after the annealing at 873 K, whereas that of the Si-DLC film with a similar Si fraction deposited at -1000 V significantly increased after the annealing at 773 K.

  3. Hydrogenated amorphous carbon-nitride films deposited on Si(100) by direct-current saddle-field plasma-enhanced chemical-vapor deposition

    CERN Document Server

    Jang, H K; Lee, Y S; Whangbo, S W; Whang, C N; Yoo, Y Z; Kim, H G

    1999-01-01

    Hydrogenated amorphous carbon nitride [a-C:H(N)] films were deposited using dc saddle-field plasma-enhanced chemical-vapor deposition. The structural and the compositional changes induced in the films by the different flow-rate ratios of N sub 2 to CH sub 4 (n sub N sub 2 /n sub C sub H sub sub 4) were investigated using Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The deposition rate of the films abruptly decreased upon increasing the n sub N sub 2 /n sub C sub H sub sub 4 ratio. However, for n sub N sub 2 /n sub C sub H sub sub 4 >0.5, the deposition rate slightly decreased with increasing n sub N sub 2 /n sub C sub H sub sub 4. The ratio of N to C (N/C) of the films saturated to 0.25 with increasing n sub N sub 2 /n sub C sub H sub sub 4. The numbers of N-H and C ident to N bonds in the films increased with increasing n sub N sub 2 /n sub C sub H sub sub 4 , but the number of C-H bonds decreased. The optical band-gap energy of the films decreased from 2.53 eV to 2.3 eV as t...

  4. Effect of plasma parameters on characteristics of silicon nitride film deposited by single and dual frequency plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Sahu, B. B.; Yin, Yongyi; Han, Jeon G.

    2016-03-01

    This work investigates the deposition of hydrogenated amorphous silicon nitride films using various low-temperature plasmas. Utilizing radio-frequency (RF, 13.56 MHz) and ultra-high frequency (UHF, 320 MHz) powers, different plasma enhanced chemical vapor deposition processes are conducted in the mixture of reactive N2/NH3/SiH4 gases. The processes are extensively characterized using different plasma diagnostic tools to study their plasma and radical generation capabilities. A typical transition of the electron energy distribution function from single- to bi-Maxwellian type is achieved by combining RF and ultra-high powers. Data analysis revealed that the RF/UHF dual frequency power enhances the plasma surface heating and produces hot electron population with relatively low electron temperature and high plasma density. Using various film analysis methods, we have investigated the role of plasma parameters on the compositional, structural, and optical properties of the deposited films to optimize the process conditions. The presented results show that the dual frequency power is effective for enhancing dissociation and ionization of neutrals, which in turn helps in enabling high deposition rate and improving film properties.

  5. Corrosion resistant coatings (Al2O3) produced by metal organic chemical vapour deposition using aluminium-tri-sec-butoxide

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Corbach, van H.D.; Fransen, T.; Gellings, P.J.

    1993-01-01

    The metal organic chemical vapour deposition (MOCVD) of amorphous alumina films on steel was performed in nitrogen at atmospheric pressure. This MOCVD process is based on the thermal decomposition of aluminium-tri-sec-butoxide (ATSB). The effect of the deposition temperature (within the range 290–42

  6. Use of calcination in exposing the entrapped Fe particles from multi-walled carbon nanotubes grown by chemical vapour deposition

    CSIR Research Space (South Africa)

    Kesavan Pillai, Sreejarani

    2009-03-01

    Full Text Available Multi-walled carbon nanotubes (MWCNTs) were synthesized by a chemical vapour deposition method. The effect of calcination at temperatures ranging from 300 to 550°C in exposing the metal nanoparticles within the nanotube bundles was studied...

  7. A solid-state nuclear magnetic resonance study of post-plasma reactions in organosilicone microwave plasma-enhanced chemical vapor deposition (PECVD) coatings.

    Science.gov (United States)

    Hall, Colin J; Ponnusamy, Thirunavukkarasu; Murphy, Peter J; Lindberg, Mats; Antzutkin, Oleg N; Griesser, Hans J

    2014-06-11

    Plasma-polymerized organosilicone coatings can be used to impart abrasion resistance and barrier properties to plastic substrates such as polycarbonate. Coating rates suitable for industrial-scale deposition, up to 100 nm/s, can be achieved through the use of microwave plasma-enhanced chemical vapor deposition (PECVD), with optimal process vapors such as tetramethyldisiloxane (TMDSO) and oxygen. However, it has been found that under certain deposition conditions, such coatings are subject to post-plasma changes; crazing or cracking can occur anytime from days to months after deposition. To understand the cause of the crazing and its dependence on processing plasma parameters, the effects of post-plasma reactions on the chemical bonding structure of coatings deposited with varying TMDSO-to-O2 ratios was studied with (29)Si and (13)C solid-state magic angle spinning nuclear magnetic resonance (MAS NMR) using both single-pulse and cross-polarization techniques. The coatings showed complex chemical compositions significantly altered from the parent monomer. (29)Si MAS NMR spectra revealed four main groups of resonance lines, which correspond to four siloxane moieties (i.e., mono (M), di (D), tri (T), and quaternary (Q)) and how they are bound to oxygen. Quantitative measurements showed that the ratio of TMDSO to oxygen could shift the chemical structure of the coating from 39% to 55% in Q-type bonds and from 28% to 16% for D-type bonds. Post-plasma reactions were found to produce changes in relative intensities of (29)Si resonance lines. The NMR data were complemented by Fourier transform infrared (FTIR) spectroscopy. Together, these techniques have shown that the bonding environment of Si is drastically altered by varying the TMDSO-to-O2 ratio during PECVD, and that post-plasma reactions increase the cross-link density of the silicon-oxygen network. It appears that Si-H and Si-OH chemical groups are the most susceptible to post-plasma reactions. Coatings produced at a

  8. Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Cheng-Yang; Hong, Shao-Chyang [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Hwang, Fu-Tsai [Department of Electro-Optical Engineering, National United University, Miao-Li, 36003, Taiwan (China); Lai, Li-Wen [ITRI South, Industrial Technology Research Institute, Liujia, Tainan, 73445, Taiwan (China); Lin, Tan-Wei [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Liu, Day-Shan, E-mail: dsliu@sunws.nfu.edu.tw [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China)

    2011-10-31

    The effect of a nickel oxide (NiO{sub x}) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO{sub x}) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO{sub x} films, with and without a NiO{sub x} seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO{sub x} film, deposited on a NiO{sub x} seed layer, was found to be lower than that of a pure TiO{sub x} film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO{sub x} film deposited onto the NiO{sub x} seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO{sub x}/TiO{sub x} system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

  9. Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    K. Sharma

    2014-01-01

    Full Text Available Aluminium-doped zinc oxide (ZnO:Al grown by expanding thermal plasma chemical vapour deposition (ETP-CVD has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing ZnO:Al on CIGS solar cell stacks, one should be aware that high substrate temperature processing (i.e., >200°C can damage the crucial underlying layers/interfaces (such as CIGS/CdS and CdS/i-ZnO. In this paper, the potential of adopting ETP-CVD ZnO:Al in CIGS solar cells is assessed: the effect of substrate temperature during film deposition on both the electrical properties of the ZnO:Al and the eventual performance of the CIGS solar cells was investigated. For ZnO:Al films grown using the high thermal budget (HTB condition, lower resistivities, ρ, were achievable (~5 × 10−4 Ω·cm than those grown using the low thermal budget (LTB conditions (~2 × 10−3 Ω·cm, whereas higher CIGS conversion efficiencies were obtained for the LTB condition (up to 10.9% than for the HTB condition (up to 9.0%. Whereas such temperature-dependence of CIGS device parameters has previously been linked with chemical migration between individual layers, we demonstrate that in this case it is primarily attributed to the prevalence of shunt currents.

  10. Methyldichloroborane evidenced as an intermediate in the chemical vapour deposition synthesis of boron carbide.

    Science.gov (United States)

    Reinisch, G; Patel, S; Chollon, G; Leyssale, J-M; Alotta, D; Bertrand, N; Vignoles, G L

    2011-09-01

    The most recent ceramic-matrix composites (CMC) considered for long-life applications as thermostructural parts in aerospace propulsion contain, among others, boron-rich phases like boron carbide. This compound is prepared by thermal Chemical Vapour Infiltration (CVI), starting from precursors like boron halides and hydrocarbons. We present a study aiming at a precise knowledge of the gas-phase composition in a hot-zone LPCVD reactor fed with BCl3, CH4 and H2, which combines experimental and theoretical approaches. This work has brought strong evidences of the presence of Methydichloroborane (MDB, BCl2CH3) in the process. It is demonstrated that this intermediate, the presence of which had never been formally proved before, appears for processing temperatures slightly lower than the deposition temperature of boron carbide. The study features quantum chemical computations, which provide several pieces of information like thermochemical and kinetic data, as well as vibration and rotation frequencies, reaction kinetics computations, and experimental gas-phase characterization of several species by FTIR, for several processing parameter sets. The main results are presented, and the place of MDB in the reaction scheme is discussed.

  11. Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application.

    Science.gov (United States)

    Chao, Chung-Hua; Wei, Da-Hua

    2015-10-03

    In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto silicon (Si) substrates via different synthesized temperatures by using plasma enhanced chemical vapor deposition (PECVD) system. The effects of different synthesized temperatures on the crystal structure, surface morphologies and optical properties have been investigated. The X-ray diffraction (XRD) patterns indicated that the intensity of (0002) diffraction peak became stronger with increasing synthesized temperature until 400 (o)C. The diffraction intensity of (0002) peak gradually became weaker accompanying with appearance of (10-10) diffraction peak as the synthesized temperature up to excess of 400 (o)C. The RT photoluminescence (PL) spectra exhibited a strong near-band-edge (NBE) emission observed at around 375 nm and a negligible deep-level (DL) emission located at around 575 nm under high c-axis ZnO thin films. Field emission scanning electron microscopy (FE-SEM) images revealed the homogeneous surface and with small grain size distribution. The ZnO thin films have also been synthesized onto glass substrates under the same parameters for measuring the transmittance. For the purpose of ultraviolet (UV) photodetector application, the interdigitated platinum (Pt) thin film (thickness ~100 nm) fabricated via conventional optical lithography process and radio frequency (RF) magnetron sputtering. In order to reach Ohmic contact, the device was annealed in argon circumstances at 450 (o)C by rapid thermal annealing (RTA) system for 10 min. After the systematic measurements, the current-voltage (I-V) curve of photo and dark current and time-dependent photocurrent response results exhibited a good responsivity and reliability, indicating that the high c-axis ZnO thin film is a suitable sensing layer for UV photodetector application.

  12. Impact of In doping on GeTe phase-change materials thin films obtained by means of an innovative plasma enhanced metalorganic chemical vapor deposition process

    Science.gov (United States)

    Szkutnik, P. D.; Aoukar, M.; Todorova, V.; Angélidès, L.; Pelissier, B.; Jourde, D.; Michallon, P.; Vallée, C.; Noé, P.

    2017-03-01

    We investigated the deposition and the phase-change properties of In-doped GeTe thin films obtained by plasma enhanced metalorganic chemical vapor deposition and doped with indium using a solid delivery system. The sublimated indium precursor flow rate was calculated as a function of sublimation and deposition parameters. Indium related optical emission recorded by means of optical emission spectroscopy during deposition plasma allowed proposing the dissociation mechanisms of the [In(CH3)2N(CH3)2]2 solid precursor. In particular, using an Ar + H2 + NH3 deposition plasma, sublimated indium molecules are completely dissociated and do not induce by-product contamination by addition of nitrogen or carbon in the films. X-ray photoelectron spectroscopy evidences the formation of In-Te bonds in amorphous as-deposited In-doped GeTe films. The formation of an InTe phase after 400 °C annealing is also evidenced by means of X-ray diffraction analysis. The crystallization temperature Tx, deduced from monitoring of optical reflectivity of In-doped GeTe films with doping up to 11 at. % slightly varies as a function of the In dopant level with a decrease of Tx down to a minimum value for an In doping level of about 6-8 at. %. In this In doping range, the structure of crystallized In-GeTe films changes and is dominated by the presence of a crystalline In2Te3 phase. Finally, the Kissinger activation energy for crystallization Ea is showing to monotonically decrease as the indium content in the GeTe film is increased indicating a promising effect of In doping on crystallization speed in memory devices while keeping a good thermal stability for data retention.

  13. Characterization of amorphous hydrogenated carbon formed by low-pressure inductively coupled plasma enhanced chemical vapor deposition using multiple low-inductance antenna units.

    Science.gov (United States)

    Tsuda, Osamu; Ishihara, Masatou; Koga, Yoshinori; Fujiwara, Shuzo; Setsuhara, Yuichi; Sato, Naoyuki

    2005-03-24

    Three-dimensional plasma enhanced chemical vapor deposition (CVD) of hydrogenated amorphous carbon (a-C:H) has been demonstrated using a new type high-density volumetric plasma source with multiple low-inductance antenna system. The plasma density in the volume of phi 200 mm x 100 mm is 5.1 x 10(10) cm(-3) within +/-5% in the lateral directions and 5.2 x 10(10)cm(-3) within +/-10% in the axial direction for argon plasma under the pressure of 0.1 Pa and the total power as low as 400 W. The uniformity of the thickness and refractive index is within +/-3.5% and +/-1%, respectively, for the a-C:H films deposited on the substrates placed on the six side walls, the top of the phi 60 mm x 80 mm hexagonal substrate holder in the pure toluene plasma under the pressure is as low as 0.04 Pa, and the total power is as low as 300 W. It is also found that precisely controlled ion bombardment by pulse biasing led to the explicit observation in Raman and IR spectra of the transition from polymer-like structure to diamond-like structure accompanied by dehydrogenation due to ion bombardment. Moreover, it is also concluded that the pulse biasing technique is effective for stress reduction without a significant degradation of hardness. The stress of 0.6 GPa and the hardness of 15 GPa have been obtained for 2.0 microm thick films deposited with the optimized deposition conditions. The films are durable for the tribology test with a high load of 20 N up to more than 20,000 cycles, showing the specific wear rate and the friction coefficient were 1.2 x 10(-7) mm3/Nm and 0.04, respectively.

  14. Synthesis, structural and field emission properties of multiwall carbon nanotube-graphene-like nanocarbon hybrid films grown by microwave plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chockalingam, Sreekumar, E-mail: sreekuc@nplindia.org [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Bisht, Atul [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Kesarwani, A.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Singh, B.P. [Physics and Engineering of Carbon, Materials Physics and Engineering Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Chand, Jagdish [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Singh, V.N. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India)

    2015-04-15

    Multiwall carbon nanotube (MWCNT)-graphene-like nanocarbon hybrid films were directly deposited on nickel substrate without any pre-treatment in a single-step by microwave plasma enhanced chemical vapor deposition (MW PECVD) technique at 600 °C. The effects of hydrogen partial pressure on the growth of MWCNT-graphene-like nanocarbon hybrid films and their structural, morphological and field emission properties were investigated. High resolution scanning electron microscope revealed MWCNT structure. High resolution transmission electron microscope images and Raman spectra revealed graphene-like nanocarbon film. Raman spectra showed 2D, G, D and D + G peaks at approximately 2690, 1590, 1350 and 2930 cm{sup −1}, respectively. The minimum threshold field for electron emission was found to be 3.6 V/μm corresponding to 1 μA/cm{sup 2} current density for the MWCNT-graphene-like nanocarbon hybrid film deposited at 20 Torr pressure whereas the maximum current density of 0.12 mA/cm{sup 2} and field enhancement factor of ∼3356 was obtained for the sample deposited at 5 Torr pressure. - Highlights: • MWCNT-graphene-like nanocarbon hybrid films were synthesized by MWPECVD technique. • Effect of pressure on the structural and field emission properties has been studied. • FESEM revealed MWCNT and HRTEM revealed graphene-like nanocarbon film structure. • Minimum E{sub T} = 3.6 V/μm with β = 3164 has been obtained in the film deposited at 20 Torr. • Maximum J = 0.12 mA/cm{sup 2} with β = 3356 has been obtained in the film deposited at 5 Torr.

  15. Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Bo-Heng [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China); Huang, Hung Ji, E-mail: hjhuang@itrc.narl.org.tw [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China); Huang, Sheng-Hsin [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Hsiao, Chien-Nan [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China)

    2014-09-01

    The inductively coupled plasma-enhanced atomic layer deposition (PEALD) method was used to fabricate ultrathin and smooth Pt thin films at low temperatures without the use of a Pt seed layer. The Pt thin metal films deposited at 200 °C onto Si and glass substrates exhibited high conductivities (< 12 μΩ cm for films with a thickness greater than 8 nm) and thermal stabilities resembling those of the bulk material. The measured density of the deposited Pt thin films was 20.7 ± 6 g/cm{sup 3}. X-ray photoelectron spectra of the films showed clear 4f peaks (74.3 eV (4f{sub 5/2}) and 71.1 eV (4f{sub 7/2})), and X-ray diffraction measurements showed the (111) peak of the fcc structure. The deposited Pt layers were in crystal form. The 25.5-nm Pt films coated onto 170-nm-wide trench structures (aspect ratio of 3.5:1) exhibited good step coverage. The PEALD-deposited Pt thin films were chemically stable under high-temperature light illumination and could serve as catalysts under strongly alkaline conditions (pH = 12) during the long-term oxidization of ammonium ions. - Highlights: • Inductively coupled plasma applied to enhance atomic layer deposition (PEALD) • Smooth Pt films fabricated by PEALD at low temperature • 8-nm Pt shows clear metal peaks in XPS and XRD. • 8-nm Pt shows low electrical resistivity of 16 μΩ cm. • 8-nm Pt shows stability under strong light and pH = 12 wash by NH{sub 4}{sup +}/NaOH solution.

  16. A comparative study of nitrogen plasma effect on field emission characteristics of single wall carbon nanotubes synthesized by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid; Zulfequar, Mohammad; Harsh; Husain, Mushahid

    2014-12-01

    Vertically aligned single wall carbon nanotubes (SWCNTs) with large scale control of diameter, length and alignment have successfully been grown by plasma enhanced chemical vapor deposition (PECVD) system. The nickel (Ni) as catalyst deposited on silicon (Si) substrate was used to grow the SWCNTs. Field emission (FE) characteristics of the as grown SWCNTs were measured using indigenously designed setup in which a diode is configured in such a way that by applying negative voltage on the copper plate (cathode) with respect to stainless steel anode plate, current density can be recorded. To measure the FE characteristics, SWCNTs film pasted on the copper plate with silver epoxy was used as electron emitter source. The effective area of anode was ∼78.5 mm2 for field emission measurements. The emission measurements were carried out under high vacuum pressure of the order of 10-6 Torr to minimize the electron scattering and degradation of the emitters. The distance between anode and cathode was kept 500 μm (constant) during entire field emission studies. The grown SWCNTs are excellent field emitters, having emission current density higher than 25 mA/cm2 at turn-on field 1.3 V/μm. In order to enhance the field emission characteristics, the as grown SWCNTs have been treated under nitrogen (N2) plasma for 5 min and again field emission characteristics have been measured. The N2 plasma treated SWCNTs show a good enhancement in the field emission properties with emission current density 81.5 mA/cm2 at turn on field 1.2 V/μm. The as-grown and N2 plasma treated SWCNTs were also characterized by field emission scanning electron microscope (FESEM), high resolution transmission electron microscope (HRTEM), Raman spectrometer, Fourier transform infrared spectrometer (FTIR) and X-ray photoelectron spectroscopy (XPS).

  17. High-temperature degradation in plasma-enhanced chemical vapor deposition Al{sub 2}O{sub 3} surface passivation layers on crystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kühnhold, Saskia [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, D-79110 Freiburg (Germany); Freiburg Materials Research Center FMF, Albert-Ludwigs-Universität Freiburg, Stefan-Meier-Straße 21 (Germany); Saint-Cast, Pierre; Kafle, Bishal; Hofmann, Marc [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, D-79110 Freiburg (Germany); Colonna, Francesco [Freiburg Materials Research Center FMF, Albert-Ludwigs-Universität Freiburg, Stefan-Meier-Straße 21 (Germany); Fraunhofer Institute for Mechanics of Materials IWM, Wöhlerstraße 11, 79108 Freiburg (Germany); Zacharias, Margit [Department of Microsystems Engineering IMTEK, Albert-Ludwigs-Universität Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg (Germany)

    2014-08-07

    In this publication, the activation and degradation of the passivation quality of plasma-enhanced chemical vapor deposited aluminum oxide (Al{sub 2}O{sub 3}) layers with different thicknesses (10 nm, 20 nm, and 110 nm) on crystalline silicon (c-Si) during long and high temperature treatments are investigated. As indicated by Fourier Transform Infrared Spectroscopy, the concentration of tetrahedral and octahedral sites within the Al{sub 2}O{sub 3} layer changes during temperature treatments and correlates with the amount of negative fixed charges at the Si/Al{sub 2}O{sub 3} interface, which was detected by Corona Oxide Characterization of Semiconductors. Furthermore, during a temperature treatment at 820 °C for 30 min, the initial amorphous Al{sub 2}O{sub 3} layer crystallize into the γ-Al{sub 2}O{sub 3} structure and was enhanced by additional oxygen as was proven by x-ray diffraction measurements and underlined by Density Functional Theory simulations. The crystallization correlates with the increase of the optical density up to 20% while the final Al{sub 2}O{sub 3} layer thickness decreases at the same time up to 26%. All observations described above were detected to be Al{sub 2}O{sub 3} layer thickness dependent. These observations reveal novel aspects to explain the temperature induced passivation and degradation mechanisms of Al{sub 2}O{sub 3} layers at a molecular level like the origin of the negative fixe charges at the Si/SiO{sub x}/Al{sub 2}O{sub 3} interface or the phenomena of blistering. Moreover, the crystal phase of Al{sub 2}O{sub 3} does not deliver good surface passivation due to a high concentration of octahedral sites leading to a lower concentration of negative fixed charges at the interface.

  18. Synthesis of few layer single crystal graphene grains on platinum by chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    S. Karamat; S. Sonuşen; Ü. Çelik; Y. Uysallı; E. Özgönül; A. Oral

    2015-01-01

    The present competition of graphene electronics demands an efficient route which produces high quality and large area graphene. Chemical vapour deposition technique, where hydrocarbons dissociate in to active carbon species and form graphene layer on the desired metal catalyst via nucleation is considered as the most suitable method. In this study, single layer graphene with the presence of few layer single crystal graphene grains were grown on Pt foil via chemical vapour deposition. The higher growth temperature changes the surface morphology of the Pt foil so a delicate process of hydrogen bubbling was used to peel off graphene from Pt foil samples with the mechanical support of photoresist and further transferred to SiO2/Si substrates for analysis. Optical microscopy of the graphene transferred samples showed the regions of single layer along with different oriented graphene domains. Two type of interlayer stacking sequences, Bernal and twisted, were observed in the graphene grains. The presence of different stacking sequences in the graphene layers influence the electronic and optical properties;in Bernal stacking the band gap can be tunable and in twisted stacking the overall sheet resistance can be reduced. Grain boundaries of Pt provides low energy sites to the carbon species, therefore the nucleation of grains are more at the boundaries. The stacking order and the number of layers in grains were seen more clearly with scanning electron microscopy. Raman spectroscopy showed high quality graphene samples due to very small D peak. 2D Raman peak for single layer graphene showed full width half maximum (FWHM) value of 30 cm ? 1. At points A, B and C, Bernal stacked grain showed FWHM values of 51.22, 58.45 and 64.72 cm ? 1, while twisted stacked grain showed the FWHM values of 27.26, 28.83 and 20.99 cm ? 1, respectively. FWHM values of 2D peak of Bernal stacked grain showed an increase of 20–30 cm ? 1 as compare to single layer graphene which showed its

  19. Synthesis of few layer single crystal graphene grains on platinum by chemical vapour deposition

    Directory of Open Access Journals (Sweden)

    S. Karamat

    2015-08-01

    Full Text Available The present competition of graphene electronics demands an efficient route which produces high quality and large area graphene. Chemical vapour deposition technique, where hydrocarbons dissociate in to active carbon species and form graphene layer on the desired metal catalyst via nucleation is considered as the most suitable method. In this study, single layer graphene with the presence of few layer single crystal graphene grains were grown on Pt foil via chemical vapour deposition. The higher growth temperature changes the surface morphology of the Pt foil so a delicate process of hydrogen bubbling was used to peel off graphene from Pt foil samples with the mechanical support of photoresist and further transferred to SiO2/Si substrates for analysis. Optical microscopy of the graphene transferred samples showed the regions of single layer along with different oriented graphene domains. Two type of interlayer stacking sequences, Bernal and twisted, were observed in the graphene grains. The presence of different stacking sequences in the graphene layers influence the electronic and optical properties; in Bernal stacking the band gap can be tunable and in twisted stacking the overall sheet resistance can be reduced. Grain boundaries of Pt provides low energy sites to the carbon species, therefore the nucleation of grains are more at the boundaries. The stacking order and the number of layers in grains were seen more clearly with scanning electron microscopy. Raman spectroscopy showed high quality graphene samples due to very small D peak. 2D Raman peak for single layer graphene showed full width half maximum (FWHM value of 30 cm−1. At points A, B and C, Bernal stacked grain showed FWHM values of 51.22, 58.45 and 64.72 cm−1, while twisted stacked grain showed the FWHM values of 27.26, 28.83 and 20.99 cm−1, respectively. FWHM values of 2D peak of Bernal stacked grain showed an increase of 20–30 cm−1 as compare to single layer graphene

  20. Process control by optical emission spectroscopy during growth of a-C:H from a CH4 plasma by plasma-enhanced chemical vapour deposition

    DEFF Research Database (Denmark)

    Barholm-Hansen, C; Bentzon, MD; Vigild, Martin Etchells

    1994-01-01

    of the gas flow. Above a certain flow rate the intensity saturates, since the deposition process is limited by the power input. At low flow rates a large fraction of the feed gas is dissociated and the deposition is limited by the supply of feed gas. A relationship was found for the intensity of the CH 431...... in the process gas. The initial OH intensity was dependent on the ultimate vacuum prior to the plasma cleaning. A correlation was found between the vanishing of the OH line and the appearance of characteristic emission lines From sputtered electrode material....

  1. High-Rate Growth and Nitrogen Distribution in Homoepitaxial Chemical Vapour Deposited Single-crystal Diamond

    Institute of Scientific and Technical Information of China (English)

    LI Hong-Dong; ZOU Guang-Tian; WANG Qi-Liang; CHENG Shao-Heng; LI Bo; L(U) Jian-Nan; L(U) Xian-Yi; JIN Zeng-Sun

    2008-01-01

    High rate (> 50 μm/h) growth of homoepitaxial single-crystal diamond (SCD) is carried out by microwave plasma chemical vapour deposition (MPCVD) with added nitrogen in the reactant gases of methane and hydrogen,using a polycrystalline-CVD-diamond-film-made seed holder. Photoluminescence results indicate that the nitrogen concentration is spatially inhomogeneous in a large scale,either on the top surface or in the bulk of those as-grown SCDs.The presence of N-distribution is attributed to the facts: (I) a difference in N-incorporation efficiency and (ii) N-diffusion,resulting from the local growth temperatures changed during the high-rate deposition process.In addition,the formed nitrogen-vacancy centres play a crucial role in N-diffusion through the growing crystal.Based on the N-distribution observed in the as-grown crystals,we propose a simple method to distinguish natural diamonds and man-made CVD SCDs.Finally,the disappearance of void defect on the top surface of SCDs is discussed to be related to a filling-in mechanism.

  2. Nano sized bismuth oxy chloride by metal organic chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jagdale, Pravin, E-mail: pravin.jagdale@polito.it [Department of Applied Science and Technology (DISAT), Politecnico di Torino, 10129 (Italy); Castellino, Micaela [Center for Space Human Robotics, Istituto Italiano di Tecnologia, Corso Trento 21, 10129 Torino (Italy); Marrec, Françoise [Laboratory of Condensed Matter Physics, University of Picardie Jules Verne (UPJV), Amiens 80039 (France); Rodil, Sandra E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexicom (UNAM), Mexico D.F. 04510 (Mexico); Tagliaferro, Alberto [Department of Applied Science and Technology (DISAT), Politecnico di Torino, 10129 (Italy)

    2014-06-01

    Metal organic chemical vapour deposition (MOCVD) method was used to prepare thin films of bismuth based nano particles starting from bismuth salts. Nano sized bismuth oxy chloride (BiOCl) crystals were synthesized from solution containing bismuth chloride (BiCl{sub 3}) in acetone (CH{sub 3}-CO-CH{sub 3}). Self-assembly of nano sized BiOCl crystals were observed on the surface of silicon, fused silica, copper, carbon nanotubes and aluminium substrates. Various synthesis parameters and their significant impact onto the formation of self-assembled nano-crystalline BiOCl were investigated. BiOCl nano particles were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and Micro-Raman spectroscopy. These analyses confirm that bismuth nanometer-sized crystal structures showing a single tetragonal phase were indeed bismuth oxy chloride (BiOCl) square platelets 18–250 nm thick and a few micrometres wide.

  3. Effect of surface treatment on hot-filament chemical vapour deposition grown diamond films

    Science.gov (United States)

    Ali, M.; Ürgen, M.; Atta, M. A.

    2012-02-01

    Diamond film growth without seeding treatment has been the subject of numerous studies. In this study, diamond films with/without seeding treatment were grown on silicon using hot-filament chemical vapour deposition. An inexpensive and simple approach, namely ‘dry ultrasonic treatment’, was introduced in which full coverage of the diamond film was achieved over the substrate having no prior seeding treatment. For comparison purposes, two substrates were seeded with different sizes of diamond particles, 5 µm by hand and 30-40 µm by ultrasonic agitation, prior to deposition. The produced diamond films were examined through standard characterization tools and distinct features were observed in each film. The diamond film grown without the seeding treatment shows slightly lower growth rate (1 µm h-1) but bigger grain size up to 8 µm compared with seeded films. Here we show the growth of uniform and high-purity diamond films free from nano-sized grains, which are grown without any seeding treatment.

  4. Metal Organic Chemical Vapour Deposited Thin Films of Cobalt Oxide Prepared via Cobalt Acetylacetonate

    Institute of Scientific and Technical Information of China (English)

    C.U. Mordi; M.A. Eleruja; B.A. Taleatu; G.O. Egharevba; A.V. Adedeji; 0.0. Akinwunmi; B. Olofinjana; C. Jeynes; E.O.B. Ajayi

    2009-01-01

    The single solid source precursor, cobalt (Ⅱ) acetylacetonate was prepared and characterized by infrared spec-troscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis (metal organic chemical vapour deposition (MOCVD)) of single solid source precursor, cobalt acetylaceto-nate, Co[C5H7O2]2 at a temperature of 420℃. The compositional characterization carried out by rutherford backscattering spectroscopy and X-ray diffraction (XRD), showed that the films have a stoichiometry of Co2O3 and an average thickness of 227±0.2 nm. A direct energy gap of 2.15±0.01 eV was calculated by the data obtained by optical absorption spectroscopy. The morphology of the films obtained by scanning electron mi-croscopy, showed that the grains were continuous and uniformly distributed at various magnifications, while the average grain size was less than 1 micron for the deposited thin films of cobalt oxide.

  5. Synthesis of thick diamond films by direct current hot-cathode plasma chemical vapour deposition

    CERN Document Server

    Jin Zeng Sun; Bai Yi Zhen; Lu Xian Yi

    2002-01-01

    The method of direct current hot-cathode plasma chemical vapour deposition has been established. A long-time stable glow discharge at large discharge current and high gas pressure has been achieved by using a hot cathode in the temperature range from 1100 degree C to 1500 degree C and non-symmetrical configuration of the poles, in which the diameter of the cathode is larger than that of anode. High-quality thick diamond films, with a diameter of 40-50 mm and thickness of 0.5-4.2 mm, have been synthesized by this method. Transparent thick diamond films were grown over a range of growth rates between 5-10 mu m/h. Most of the thick diamond films have thermal conductivities of 10-12 W/K centre dot cm. The thick diamond films with high thermal conductivity can be used as a heat sink of semiconducting laser diode array and as a heat spreading and isolation substrate of multichip modules. The performance can be obviously improved

  6. Development and characterization of Undoped Silicon Glass (USG using chemical vapour deposition

    Directory of Open Access Journals (Sweden)

    Jagadeesha T

    2011-02-01

    Full Text Available Sub atmospheric chemical vapour deposition (SACVD is a widely used technique in semiconductor integrated circuit (IC manufacturing, especially to form inter-metal silicon (IMD dioxide thin films. It was designed for commercially available tools in order to satisfy the gap filling requirements necessary for 0.18 and 0.15 lm technology ICs, but it has been successfully extended also for 0.13 lm technological node and over. SACVD technique has a potential impact on device electrical characteristics and metallurgy compatibility, according to process conditions, such as mass flow rate of TEOS, Gasflows, RF power. Present work focuses on development and characterisation of undoped silicate glass that can be used for Flash memory and Logic devices. It is shown that new process yield deposition rate improvement of 51% and throughput improvement of 13%.. Qualitative yield comparison and wafer map to map comparison work is also presented for various technology nodes. Device parameters comparison with the standard process is also included in the present work.

  7. Chemical Vapour Deposition of Graphene with Re-useable Pt and Cu substrates for Flexible Electronics

    Science.gov (United States)

    Karamat, Shumaila; Sonusen, Selda; Celik, Umit; Uysalli, Yigit; Oral, Ahmet

    2015-03-01

    Graphene has gained the attention of scientific world due to its outstanding physical properties. The future demand of flexible electronics such as solar cells, light emitting diodes, photo-detectors and touch screen technology requires more exploration of graphene properties on flexible substrates. The most interesting application of graphene is in organic light emitting diodes (OLED) where efforts are in progress to replace brittle indium tin oxide (ITO) electrode with a flexible graphene electrode because ITO raw materials are becoming increasingly expensive, and its brittle nature makes it unsuitable for flexible devices. In this work, we grow graphene on Pt and Cu substrates using chemical vapour deposition (CVD) and transferred it to a polymer material (PVA) using lamination technique. We used hydrogen bubbling method for separating graphene from Pt and Cu catalyst to reuse the substrates many times. After successful transfer of graphene on polymer samples, we checked the resistivity values of the graphene sheet which varies with growth conditions. Furthermore, Raman, atomic force microscopy (AFM), I-V and Force-displacement measurements will be presented for these samples.

  8. Continuous production of carbon nanotubes and diamond films by swirled floating catalyst chemical vapour deposition method

    Directory of Open Access Journals (Sweden)

    S.E. Iyuke

    2010-01-01

    Full Text Available Various techniques for the synthesis of carbon nanotubes (CNTs are being developed to meet an increasing demand as a result of their versatile applications. Swirled floating catalyst chemical vapour deposition (SFCCVD is one of these techniques. This method was used to synthesise CNTs on a continuous basis using acetylene gas as a carbon source, ferrocene dissolved in xylene as a catalyst precursor, and both hydrogen and argon as carrier gases. Transmission electron microscopy analyses revealed that a mixture of single and multi-wall carbon nanotubes and other carbon nanomaterials were produced within the pyrolytic temperature range of 900–1 100°C and acetylene flow rate range of 118–370 ml min–1. Image comparison of raw and purified products showed that low contents of iron particles and amorphous carbon were contained in the synthesised carbon nanotubes. Diamond films were produced at high ferrocene concentration, hydrogen flow rate and pyrolysis temperatures, while carbon nanoballs were formed and attached to the surface of theCNTs at low ferrocene content and low pyrolysis temperature.

  9. A comparison of different spray chemical vapour deposition methods for the production of undoped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, Jerome [Arts et Metiers Paris Tech LPMI2, bd du Ronceray, BP 3525, 49035 ANGERS Cedex (France); Bouteville, Anne, E-mail: Anne.Bouteville@angers.ensam.f [Arts et Metiers Paris Tech LPMI2, bd du Ronceray, BP 3525, 49035 ANGERS Cedex (France); Hamilton, Jeff; Pemble, Martyn E.; Povey, Ian M. [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland)

    2009-12-15

    Two different methods of spray chemical vapour deposition have been used to grow ZnO thin films on glass substrates from zinc acetate solution over the temperature range 400 {sup o}C to 550 {sup o}C. The first of these is named InfraRed Assisted Spray Chemical Vapour Deposition (IRAS-CVD). This method uses intense IR radiation to heat not only the substrate but also the gaseous species entering the reactor. The second method is a more conventional approach known simply as ultrasonic spray CVD, which utilises IR lamps to heat the substrate only. By way of comparing these two approaches we present data obtained from contact angle measurements, crystallinity and mean crystallite size, photoluminescence, electrical and optical properties. Additionally we have examined the role of annealing within the IRAS-CVD reactor environment.

  10. The reaction-field effect on the chemical potentials of polar aprotic non-aromatic liquids 1. Vapour pressure

    Science.gov (United States)

    Rosseinsky, D. R.; Stead, K.; Mowforth, C. W.

    1998-10-01

    The reaction field for the interaction of a molecule with its identical neighbours is shown to be a major determinant of the chemical potential of many dipolar liquids. The electrostatic potential w, derived for immersion of the dipolar molecule in its own kind, and notably comprising solely static and hf permittivities, is equated with the difference between the polar-liquid chemical potential and that of an isostructural non-polar hydrocarbon. For all the 26 non-aromatic Onsager liquids for which the requisite data are available, acceptable conformity is established of the vapour pressure calculated from w with that observed, fluorocarbons excepted. If w turns out to be small, vapour pressures of (these 12) dipolars approximate quite closely to those of the isostructural non-polars, as expected. For ketones and nitroalkanes varied-temperature data are available and well reproduced via w: thus calculated vaporization enthalpies equal the observed.

  11. Structural evolution of a Ta-filament during hot-wire chemical vapour deposition of Silicon investigated by electron backscatter diffraction

    CSIR Research Space (South Africa)

    Oliphant, CJ

    2012-03-01

    Full Text Available In this study we investigate the structural changes of a burnt-out tantalum filament that was operated at typical hydrogenated nanocrystalline silicon synthesis conditions in our hot-wire chemical vapour deposition chamber. Scanning electron...

  12. Low-pressure Chemical Vapour Deposition of Silicon Nanoparticles:Synthesis and Characterisation

    Directory of Open Access Journals (Sweden)

    A. Kumar

    2008-07-01

    Full Text Available emiconductor nanostructures such as quantum wells, quantum wires or quantum dots exhibit superior properties in comparison to their bulk forms. Quantum dots are described aszero-dimensional electron gas system, as carriers are confined in all the three directions. Densityof states is discrete function of energy. Allowed energy spectrum is discrete like in an atom.Energy band gap is broadened due to carriers confinement. Semiconductor quantum dots exhibittypical coulomb blockade characteristic which is exploited for development of new generationof nanoelectronic devices namely single-electron transistor, memories, etc, whose operationdepends on quantum mechanical tunneling of carriers through energy barriers. Thesesemiconductor nanostructures emit light in visible range upon excitation by optical means. Inrecent years,  research  has been focused on different nano-scale materials; metals (Au, Ag, Fe,Mn, Ni, metal oxides (SnO2, ZnO2, compound semiconductors (GaAs, GaAlAs, CdSe, CdS,GaN, and elemental semiconductors (silicon and germanium. As silicon is the most favouredmaterial in the established integrated circuits manufacturing technology, research is being donefor controlled synthesis and characterisation of Si nanoparticles. The Si nanoparticles havebeen synthesised on oxide and nitride layers over  Si substrate by IC technology compatiblelow-pressure chemical vapour deposition technique. Atomic force microscopy (AFMcharacterisation has been extensively carried out on the samples. It is shown that the tip radiusand shape of tip lead to less accurate estimate of the actual size. The AFM images have been evaluated based on the real surface topography and shape of the tip. Photolumine scence (PL studies have been performed to characterise the samples. The PL measurements showed visiblelight emission from synthesised silicon nanoparticles.Defence Science Journal, 2008, 58(4, pp.550-558, DOI:http://dx.doi.org/10.14429/dsj.58.1676

  13. Aerosol assisted chemical vapour deposition of gas sensitive SnO2 and Au-functionalised SnO2 nanorods via a non-catalysed vapour solid (VS) mechanism

    Science.gov (United States)

    Vallejos, Stella; Selina, Soultana; Annanouch, Fatima Ezahra; Gràcia, Isabel; Llobet, Eduard; Blackman, Chris

    2016-06-01

    Tin oxide nanorods (NRs) are vapour synthesised at relatively lower temperatures than previously reported and without the need for substrate pre-treatment, via a vapour-solid mechanism enabled using an aerosol-assisted chemical vapour deposition method. Results demonstrate that the growth of SnO2 NRs is promoted by a compression of the nucleation rate parallel to the substrate and a decrease of the energy barrier for growth perpendicular to the substrate, which are controlled via the deposition conditions. This method provides both single-step formation of the SnO2 NRs and their integration with silicon micromachined platforms, but also allows for in-situ functionalization of the NRs with gold nanoparticles via co-deposition with a gold precursor. The functional properties are demonstrated for gas sensing, with microsensors using functionalised NRs demonstrating enhanced sensing properties towards H2 compared to those based on non-functionalised NRs.

  14. Growth of AlGaN Epitaxial Film with High Al Content by Metalorganic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Xiao-Lan; ZHAO De-Gang; YANG Hui; LIANG Jun-Wu

    2007-01-01

    A high-Al-content AlCaN epilayer is grown on a low-temperature-deposited AlN buffer on (0001) sapphire bylow pressure metalorganic chemical vapour deposition. The dependence of surface roughness, tilted mosaicity,and twisted mosaicity on the conditions of the AlCaN epilayer deposition is evaluated. An AlCaN epilayer withfavourable surface morphology and crystal quality is deposited on a 20nm low-temperature-deposited AlN buffer at a low Ⅴ/Ⅲ flow ratio of 783 and at a low reactor pressure of 100 Torr, and the adduct reaction between trimethylaluminium and NH3 is considered.

  15. Nitrogen-Doped Chemical Vapour Deposited Diamond: a New Material for Room-Temperature Solid State Maser

    Institute of Scientific and Technical Information of China (English)

    N. A. Poklonski; N. M. Lapchuk; A. V. Khomich; LU Fan-Xiu; TANG Wei-Zhong; V. G. Ralchenko; I. I. Vlasov; M. V. Chukichev; Sambuu Munkhtsetseg

    2007-01-01

    Electron spin resonance (ESR) in polycrystalline diamond films grown by dc arc-jet and microwave plasma chemical vapour deposition is studied. The films with nitrogen impurity concentration up to 8 × 1018 cm-3 are also characterized by Raman, cathodoluminescence and optical absorption spectra. The ESR signal from P1 centre with g-factor of 2.0024 (nitrogen impurity atom occupying C site in diamond lattice) is found to exhibit an inversion with increasing the microwave power in an H102 resonator. The spin inversion effect could be of interest for further consideration of N-doped diamonds as a medium for masers operated at room temperature.

  16. Morphology of carbon nanotubes prepared via chemical vapour deposition technique using acetylene: A small angle neutron scattering investigation

    Indian Academy of Sciences (India)

    D Sen; K Dasgupta; J Bahadur; S Mazumder; D Sathiyamoorthy

    2008-11-01

    Small angle neutron scattering (SANS) has been utilized to study the morphology of the multi-walled carbon nanotubes prepared by chemical vapour deposition of acetylene. The effects of various synthesis parameters like temperature, catalyst concentration and catalyst support on the size distribution of the nanotubes are investigated. Distribution of nanotube radii in two length scales has been observed. The number density of the smaller diameter tubes was found more in number compared to the bigger one for all the cases studied. No prominent scaling of the structure factor was observed for the different synthesis conditions.

  17. Probing the Gas-Phase Dynamics of Graphene Chemical Vapour Deposition using in-situ UV Absorption Spectroscopy

    DEFF Research Database (Denmark)

    Shivayogimath, Abhay; Mackenzie, David; Luo, Birong

    2017-01-01

    of multilayer nucleation when backstreaming is suppressed. These results point to an important and previously undescribed mechanism for multilayer nucleation, wherein higher-order gas-phase carbon species play an integral role. Our work highlights the importance of gas-phase dynamics in understanding......The processes governing multilayer nucleation in the chemical vapour deposition (CVD) of graphene are important for obtaining high-quality monolayer sheets, but remain poorly understood. Here we show that higher-order carbon species in the gas-phase play a major role in multilayer nucleation...

  18. Chemical vapour deposition of tungsten oxide thin films from single-source precursors

    Science.gov (United States)

    Cross, Warren Bradley

    This thesis describes the chemical vapour deposition (CVD) of tungsten oxide thin films on glass from a wide range of single-source precursors. Chapter 1 describes previous work that has motivated this research. Chapter 2 discusses the synthesis of conventional style candidates for single-source precursors. Reactions of WOCl4 with 3-methyl salicylic acid (MesaliH2) and 3,5-di-iso-propyl salicylic acid (di-i-PrsaliH2) yielded the ditungsten complexes [WO(Mesali)(MesaliH)2(mu-O)], 1, and [WO(di-i-Prsali)(di-i-PrsaliH)2(mu-O)], 2, and the monotungsten complex [WO(di-i-Pr sali)(di-i-PrsaliH)Cl], 3. Tungsten(VI) dioxo complexes were prepared by ligand exchange reactions of [WO2(acac)2], 4, yielding [WO2(catH)2], 5, and [WO2(malt)2], 6, (catH2 = 3,5-di-tert-butyl-catechol; maltH = maltol). Chapter 3 describes thermal analyses of the complexes 1 - 6 and tungsten hexaphenoxide, and consequently their suitability for CVD. The use of [W(OPh)6] and 2 - 6 in aerosol assisted CVD is reported in Chapter 4. Brown tungsten oxide was deposited from 2 and 3 at 600 °C; blue partially-reduced WO3-x thin films were deposited from [W(OPh)6] from 300 to 500 °C, from 4 at 600 °C and 6 at 620 °C. Sintering all of the coatings in air at 550 °C afforded yellow films of stoichiometric WO3. Raman spectroscopy and glancing angle XRD showed that coatings deposited from [W(OPh)6] at 300 °C were amorphous, whereas all the other films were the monoclinic phase gamma-tungsten oxide. Taking full advantage of the aerosol vaporisation technique led to the CVD of tungsten oxide films from polyoxometalate single-source precursors, as described in Chapter 5. The isopolyanion [nBu4N]2[W6O19], 7, afforded WO3 at 410 °C; the heteropolyanions [nBu4N]4H3[PW11O39], 8, and [nBu4N]4[PNbW11O40], 9, were used to deposit doped WO3 thin films in a highly-controlled manner at 480 °C. Thus, the unprecedented use of large, charged clusters for CVD was demonstrated. Chapter 6 describes investigations of the

  19. Preliminary viability studies of fibroblastic cells cultured on microcrystalline and nanocrystalline diamonds produced by chemical vapour deposition method

    Directory of Open Access Journals (Sweden)

    Ana Amélia Rodrigues

    2012-01-01

    Full Text Available Implant materials used in orthopedics surgery have demonstrated some disadvantages, such as metallic corrosion processes, generation of wear particles, inflammation reactions and bone reabsorption in the implant region. The diamond produced through hot-filament chemical vapour deposition method is a new potential biomedical material due to its chemical inertness, extreme hardness and low coefficient of friction. In the present study we analysis two samples: the microcrystalline diamond and the nanocrystalline diamond. The aim of this study was to evaluate the surface properties of the diamond samples by scanning electron microscopy, Raman spectroscopy and atomic force microscopy. Cell viability and morphology were assessed using thiazolyl blue tetrazolium bromide, cytochemical assay and scanning electron microscopy, respectively. The results revealed that the two samples did not interfere in the cell viability, however the proliferation of fibroblasts cells observed was comparatively higher with the nanocrystalline diamond.

  20. Preliminary viability studies of fibroblastic cells cultured on microcrystalline and nanocrystalline diamonds produced by chemical vapour deposition method

    Directory of Open Access Journals (Sweden)

    Ana Amélia Rodrigues

    2013-02-01

    Full Text Available Implant materials used in orthopedics surgery have demonstrated some disadvantages, such as metallic corrosion processes, generation of wear particles, inflammation reactions and bone reabsorption in the implant region. The diamond produced through hot-filament chemical vapour deposition method is a new potential biomedical material due to its chemical inertness, extreme hardness and low coefficient of friction. In the present study we analysis two samples: the microcrystalline diamond and the nanocrystalline diamond. The aim of this study was to evaluate the surface properties of the diamond samples by scanning electron microscopy, Raman spectroscopy and atomic force microscopy. Cell viability and morphology were assessed using thiazolyl blue tetrazolium bromide, cytochemical assay and scanning electron microscopy, respectively. The results revealed that the two samples did not interfere in the cell viability, however the proliferation of fibroblasts cells observed was comparatively higher with the nanocrystalline diamond.

  1. Liquid and vapour-phase antifungal activities of selected essential oils against candida albicans: microscopic observations and chemical characterization of cymbopogon citratus

    Directory of Open Access Journals (Sweden)

    Malik Anushree

    2010-11-01

    Full Text Available Abstract Background Use of essential oils for controlling Candida albicans growth has gained significance due to the resistance acquired by pathogens towards a number of widely-used drugs. The aim of this study was to test the antifungal activity of selected essential oils against Candida albicans in liquid and vapour phase and to determine the chemical composition and mechanism of action of most potent essential oil. Methods Minimum Inhibitory concentration (MIC of different essential oils in liquid phase, assayed through agar plate dilution, broth dilution & 96-well micro plate dilution method and vapour phase activity evaluated through disc volatilization method. Reduction of C. albicans cells with vapour exposure was estimated by kill time assay. Morphological alteration in treated/untreated C. albicans cells was observed by the Scanning electron microscopy (SEM/Atomic force microscopy (AFM and chemical analysis of the strongest antifungal agent/essential oil has been done by GC, GC-MS. Results Lemon grass (Cymbopogon citratus essential oil exhibited the strongest antifungal effect followed by mentha (Mentha piperita and eucalyptus (Eucalyptus globulus essential oil. The MIC of lemon grass essential oil in liquid phase (288 mg/l was significantly higher than that in the vapour phase (32.7 mg/l and a 4 h exposure was sufficient to cause 100% loss in viability of C. albicans cells. SEM/AFM of C. albicans cells treated with lemon grass essential oil at MIC level in liquid and vapour phase showed prominent shrinkage and partial degradation, respectively, confirming higher efficacy of vapour phase. GC-MS analysis revealed that lemon grass essential oil was dominated by oxygenated monoterpenes (78.2%; α-citral or geranial (36.2% and β-citral or neral (26.5%, monoterpene hydrocarbons (7.9% and sesquiterpene hydrocarbons (3.8%. Conclusion Lemon grass essential oil is highly effective in vapour phase against C. albicans, leading to deleterious

  2. Liquid and vapour-phase antifungal activities of selected essential oils against Candida albicans: microscopic observations and chemical characterization of Cymbopogon citratus.

    Science.gov (United States)

    Tyagi, Amit K; Malik, Anushree

    2010-11-10

    Use of essential oils for controlling Candida albicans growth has gained significance due to the resistance acquired by pathogens towards a number of widely-used drugs. The aim of this study was to test the antifungal activity of selected essential oils against Candida albicans in liquid and vapour phase and to determine the chemical composition and mechanism of action of most potent essential oil. Minimum Inhibitory concentration (MIC) of different essential oils in liquid phase, assayed through agar plate dilution, broth dilution & 96-well micro plate dilution method and vapour phase activity evaluated through disc volatilization method. Reduction of C. albicans cells with vapour exposure was estimated by kill time assay. Morphological alteration in treated/untreated C. albicans cells was observed by the Scanning electron microscopy (SEM)/Atomic force microscopy (AFM) and chemical analysis of the strongest antifungal agent/essential oil has been done by GC, GC-MS. Lemon grass (Cymbopogon citratus) essential oil exhibited the strongest antifungal effect followed by mentha (Mentha piperita) and eucalyptus (Eucalyptus globulus) essential oil. The MIC of lemon grass essential oil in liquid phase (288 mg/l) was significantly higher than that in the vapour phase (32.7 mg/l) and a 4 h exposure was sufficient to cause 100% loss in viability of C. albicans cells. SEM/AFM of C. albicans cells treated with lemon grass essential oil at MIC level in liquid and vapour phase showed prominent shrinkage and partial degradation, respectively, confirming higher efficacy of vapour phase. GC-MS analysis revealed that lemon grass essential oil was dominated by oxygenated monoterpenes (78.2%); α-citral or geranial (36.2%) and β-citral or neral (26.5%), monoterpene hydrocarbons (7.9%) and sesquiterpene hydrocarbons (3.8%). Lemon grass essential oil is highly effective in vapour phase against C. albicans, leading to deleterious morphological changes in cellular structures and cell

  3. Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges

    Science.gov (United States)

    Tallaire, Alexandre; Achard, Jocelyn; Silva, François; Brinza, Ovidiu; Gicquel, Alix

    2013-02-01

    Diamond is a material with outstanding properties making it particularly suited for high added-value applications such as optical windows, power electronics, radiation detection, quantum information, bio-sensing and many others. Tremendous progresses in its synthesis by microwave plasma assisted chemical vapour deposition have allowed obtaining single crystal optical-grade material with thicknesses of up to a few millimetres. However the requirements in terms of size, purity and crystalline quality are getting more and more difficult to achieve with respect to the forecasted applications, thus pushing the synthesis method to its scientific and technological limits. In this paper, after a short description of the operating principles of the growth technique, the challenges of increasing crystal dimensions both laterally and vertically, decreasing and controlling point and extended defects as well as modulating crystal conductivity by an efficient doping will be detailed before offering some insights into ways to overcome them.

  4. Monte Carlo simulation of the behaviour of electrons during electron-assisted chemical vapour deposition of diamond

    Institute of Scientific and Technical Information of China (English)

    董丽芳; 陈俊英; 董国义; 尚勇

    2002-01-01

    The behaviour of electrons during electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron energy distribution and velocity distribution are obtained over a wide range of reduced field E/N (the ratio of the electric field to gas molecule density) from 100 to 2000 in units of 1Td=10-17Vcm2.Their effects on the diamond growth are also discussed. Themain results obtained are as follows. (1) The velocity profile is asymmetric for the component parallel to the field.Ihe velocity distribution has a peak shift in the field direction. Most electrons possess non-zero velocity parallel to the substrate. (2) The number of atomic H is a function of E/N. (3) High-quality diamond can be obtained under the condition of E/N from 50 to 800Td due to sufficient atomic H and electron bombardment.

  5. Properties of MgB{sub 2} films grown at various temperatures by hybrid physical-chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Ke; Veldhorst, Menno; Li, Qi; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lee, Che-Hui; Lamborn, Daniel R; DeFrain, Raymond; Redwing, Joan M [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)

    2008-09-15

    A hybrid physical-chemical vapour deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB{sub 2} thin films and thick films at various temperatures. We are able to grow superconducting MgB{sub 2} thin films at temperatures as low as 350 deg. C with a T{sub c0} of 35.5 K. MgB{sub 2} films up to 4 {mu}m in thickness grown at 550 deg. C have J{sub c} over 10{sup 6} A cm{sup -2} at 5 K and zero applied field. The low deposition temperature of MgB{sub 2} films is desirable for all-MgB{sub 2} tunnel junctions and MgB{sub 2} thick films are important for applications in coated conductors.

  6. Low Density Self-Assembled InAs/GaAs Quantum Dots Grown by Metal Organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Lin; LIU Guo-Jun; WANG Xiao-Hua; LI Mei; LI Zhan-Guo; WAN Chun-Ming

    2008-01-01

    The serf-assembled InAs quantum dots (QDs) on GaAs substrates with low density (5×108cm-2) are achieved using relatively higher growth temperature and low InAs coverage by low-pressure metal-organic chemical vapour deposition.The macro-PL spectra exhibit three emission peaks at 1361,1280 and 1204nm,corresponding to the ground level (GS),the first excited state (ES1) and the second excited state (ES2) of the QDs,respectively,which are obtained when the GaAs capping layer/s grown using triethylgallium and tertiallybutylarsine.As a result of micro-PL,only a few peaks from individual dots have been observed.The exciton-biexciton behaviour was clearly observed at low temperature.

  7. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene

    Science.gov (United States)

    Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, Grzegorz

    2016-07-01

    We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication.

  8. Growth of a Novel Periodic Structure of SiC/AlN Multilayers by Low Pressure Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    ZHAO Yong-Mei; SUN Guo-Sheng; LI Jia-Ye; LIU Xing-Fang; WANG Lei; ZHAO Wan-Shun; LI Jin-Min

    2007-01-01

    A novel 10-period SiC/AlN multilayered structure with a SiC cap layer is prepared by low pressure chemical vapour deposition (LPCVD). The structure with total Sim thickness of about 1.45μm is deposited on a Si (111) substrate and shows good surface morphology with a smaller rms surface roughness of 5.3 nm. According to the secondary ion mass spectroscopy results, good interface of the 10 period SiC/AlN structure and periodic changes of depth profiles of C, Si, Al, N components are obtained by controlling the growth procedure. The structure exhibits the peak reflectivity close to 30% near the wavelength of 322 nm. To the best of our knowledge, this is the first report of growth of the SiC/AlN periodic structure using the home-made LPCVD system.

  9. Aerosol assisted chemical vapour deposition of germanium thin films using organogermanium carboxylates as precursors and formation of germania films

    Indian Academy of Sciences (India)

    Alpa Y Shah; Amey Wadawale; Vijaykumar S Sagoria; Vimal K Jain; C A Betty; S Bhattacharya

    2012-06-01

    Diethyl germanium bis-picolinate, [Et2Ge(O2CC5H4N)2], and trimethyl germanium quinaldate, [Me3Ge(O2CC9H6N)], have been used as precursors for deposition of thin films of germanium by aerosol assisted chemical vapour deposition (AACVD). The thermogravimetric analysis revealed complete volatilization of complexes under nitrogen atmosphere. Germanium thin films were deposited on silicon wafers at 700°C employing AACVD method. These films on oxidation under an oxygen atmosphere at 600°C yield GeO2. Both Ge and GeO2 films were characterized by XRD, SEM and EDS measurements. Their electrical properties were assessed by current–voltage (–) characterization.

  10. Frequency-dependent capacitance-voltage and conductance-voltage characteristics of low-dielectric-constant SiOC(-H) thin films deposited by using plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chang Young; Lee, Heang Seuk; Woo, Jong Kwan; Choi, Chi Kyu; Lee, Kwang Man; Hyun, Myung Taek [Jeju National University, Jeju (Korea, Republic of); Navamathavan, Rangaswamy [Chonbuk National University, Chonju (Korea, Republic of)

    2010-12-15

    We report on the electrical characteristics of the metal-insulator-semiconductor (MIS) structure of low-dielectric-constant SiOC(-H) films. SiOC(-H) thin films were deposited on p-Si(100) substrates by using a plasma-enhanced chemical vapor deposition (PECVD) system. The frequency dependence of the capacitance-voltage (C-V) and the conductance-voltage (G/{omega}-V) characteristics of the A1/SiOC(-H)/p-Si(100)/Al MIS structures was analyzed. C-V and G/{omega}-V measurements were carried out over a frequency range of 1 kHz to 5 MHz. Based on our analysis, the C-V and the G/{omega}-V characteristics confirmed that the surface states and the series resistance were important parameters that strongly influenced the electrical properties of the A1/SiOC(-H)/p-Si(100)/Al MIS structures.

  11. Impacts of light illumination on monocrystalline silicon surfaces passivated by atomic layer deposited Al2O3 capped with plasma-enhanced chemical vapor deposited SiN x

    Science.gov (United States)

    Lin, Fen; Toh, Mei Gi; Thway, Maung; Li, Xinhang; Nandakumar, Naomi; Gay, Xavier; Dielissen, Bas; Raj, Samuel; Aberle, Armin G.

    2017-08-01

    In this work, we investigate the impact of light illumination on crystalline silicon surfaces passivated with inline atomic layer deposited aluminum oxide capped with plasma-enhanced chemical vapor deposited silicon nitride. It is found that, for dedicated n-type lifetime samples under illumination, there is no light induced degradation (LID) but enhanced passivation. The lifetime increase happened with a much faster speed compared to the lifetime decay during dark storage, resulting in the overall lifetime enhancement for actual field application scenarios (sunshine during the day and darkness during the night). In addition, it was found that the lifetime enhancement is spectrally dependent and mainly associated with the visible part of the solar spectrum. Hence, it has negligible impact for such interfaces applied on the rear of the solar cells, for example p-type aluminum local back surface field (Al-LBSF) cells.

  12. The effect of thermal annealing on the properties of alumina films prepared by metal organic chemical vapour deposition at atmospheric pressure

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Corbach, van H.D.; Fransen, T.; Gellings, P.J.

    1994-01-01

    Thin films deposited at 330°C by metal organic chemical vapour deposition on stainless steel, type AISI 304, were annealed in a nitrogen atmosphere for 1, 2 and 4 h at 600, 700 and 800°C. The film properties, including the protection of the underlying substrate against high temperature corrosion, th

  13. Low Temperature Silicon Nitride by Hot Wire Chemical Vapour Deposition for the Use in Impermeable Thin Film Encapsulation on Flexible Substrates

    NARCIS (Netherlands)

    Spee, D.A.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

    2011-01-01

    High quality non porous silicon nitride layers were deposited by hot wire chemical vapour deposition at substrate temperatures lower than 110 C. The layer properties were investigated using FTIR, reflection/transmission measurements and 1:6 buffered HF etching rate. A Si–H peak position of 2180 cm−1

  14. The protective properties of thin alumina films deposited by metal organic chemical vapour deposition against high-temperature corrosion of stainless steels

    NARCIS (Netherlands)

    Morssinkhof, R.W.J.; Fransen, T.; Heusinkveld, M.M.D.; Gellings, P.J.

    1989-01-01

    Coatings of Al2O3 were deposited on Incoloy 800H and AISI 304 by means of metal organic chemical vapour deposition. Diffusion limitation was the rate-determining step above 420 °C. Below this temperature, the activation energy of the reaction appeared to be 30 kJ mol−1. Coating with Al2O3 increases

  15. Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Salem, B. [Laboratoire des Technologies de la Microelectronique (LTM)-UMR 5129 CNRS, CEA-Grenoble, 17 Rue des Martyrs, F-38054 Grenoble (France)], E-mail: bassem.salem@cea.fr; Dhalluin, F.; Baron, T. [Laboratoire des Technologies de la Microelectronique (LTM)-UMR 5129 CNRS, CEA-Grenoble, 17 Rue des Martyrs, F-38054 Grenoble (France); Jamgotchian, H.; Bedu, F.; Dallaporta, H. [CRMC-N, Faculte des Sciences de Luminy, Case 913, 13288 Marseille Cedex 09 (France); Gentile, P.; Pauc, N. [CEA-DRFMC/SiNaPS, 17 Rue des Martyrs, F-38054 Grenoble (France); Hertog, M.I. den; Rouviere, J.L. [CEA-DRFMC/SP2M/LEMMA GEM-minatec, 17 Rue des Martyrs, F-38054 Grenoble (France); Ferret, P. [CEA-Leti, DOPT, 17 Rue des Martyrs, F-38054 Grenoble (France)

    2009-03-15

    In this work, we present the elaboration and the electrical characterisation of undoped silicon nanowires (SiNWs) which are grown via vapour-liquid-solid mechanism using Au nucleation catalyst and SiH{sub 4} as the silicon source. The nanowires were investigated by high-resolution transmission electron microscopy. An electrical test structure was realized by a dispersion of the nanowires on SiO{sub 2}/Si substrate with photolithography pre-patterned Au/Ti microelectrodes. The connexion is made on a single nanowire using a cross beam plate form allowing scanning electron microscopy imaging and the deposition of tungsten wiring by focussed ion beam deposition. The current-voltage characteristics of the nanowires are linear which indicates an ohmic contact between tungsten allow and SiNWs. The total resistance of the nanowires increases from 135 M{omega} to 5 G{omega} when the diameter decreases from 190 to 130 nm. This effect is may be due to the reduction of the conductive inner volume of the nanowires and to charged defects at the Si-SiO{sub 2} interface if we assume that the contact resistance is constant. Moreover, gate-dependent current versus bias voltage measurement show that the nanowires exhibit a field effect response characteristic of a p-type semiconductor.

  16. Charge effect of superparamagnetic iron oxide nanoparticles on their surface functionalization by photo-initiated chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Javanbakht, Taraneh [Ecole Polytechnique of Montreal, Department of Chemical Engineering (Canada); Laurent, Sophie; Stanicki, Dimitri [University of Mons, Laboratory of NMR and Molecular Imaging (Belgium); Raphael, Wendell; Tavares, Jason Robert, E-mail: jason.tavares@polymtl.ca [Ecole Polytechnique of Montreal, Department of Chemical Engineering (Canada)

    2015-12-15

    Diverse applications of superparamagnetic iron oxide nanoparticles (SPIONs) in the chemical and biomedical industry depend on their surface properties. In this paper, we investigate the effect of initial surface charge (bare, positively and negatively charged SPIONs) on the resulting physicochemical properties of the particles following treatment through photo-initiated chemical vapour deposition (PICVD). Transmission electron microscopy shows a nanometric polymer coating on the SPIONs and contact angle measurements with water demonstrate that their surface became non-polar following functionalization using PICVD. FTIR and XPS data confirm the change in the chemical composition of the treated SPIONs. Indeed, XPS data reveal an initial charge-dependent increase in the surface oxygen content in the case of treated SPIONs. The O/C percentage ratios of the bare SPIONs increase from 1.7 to 1.9 after PICVD treatment, and decrease from 1.7 to 0.7 in the case of negatively charged SPIONs. The ratio remains unchanged for positively charged SPIONs (1.7). This indicates that bare and negatively charged SPIONs showed opposite preference for the oxygen or carbon attachment to their surface during their surface treatment. These results reveal that both the surface charge and stereochemical effects have determinant roles in the polymeric coating of SPIONs with PICVD. Our findings suggest that this technique is appropriate for the treatment of nanoparticles.Graphical Abstract.

  17. Preparation, characterisation and optimisation of lithium battery anodes consisting of silicon synthesised using Laser assisted Chemical Vapour Pyrolysis

    Science.gov (United States)

    Veliscek, Ziga; Perse, Lidija Slemenik; Dominko, Robert; Kelder, Erik; Gaberscek, Miran

    2015-01-01

    Suitability of silicon prepared using Laser assisted Chemical Vapour Pyrolysis (LaCVP) as a potential anode material in lithium batteries is systematically investigated. Its compositional, morphological, physical-chemical and electrochemical properties are compared to a current benchmark commercial silicon. Important differences in particle size and particle composition are found which, as shown, affect critically the rheological properties of the corresponding electrode slurries. In order to overcome the rheological problems of prepared nanosilicon, we introduce and optimise a spraying method instead of using the usual casting technique for slurry application. Interestingly, the optimised electrodes show similar electrochemical performance, regardless of the particle size or composition of nanosilicon. This unexpected result is explained by the unusually high resistance of electrochemical wiring in silicon-based electrodes (about 60 Ohm per 1 mg cm-2 of active material loading). Despite that, the optimised material still shows a capacity up to 1200 mA h g-1 at a relatively high loading of 1.6 mg cm-2 and after 20 cycles. On the other hand, by decreasing the loading to below ca. 0.9 mg cm-2 the wiring problems are effectively overcome and capacities close to theoretical values can be obtained.

  18. A novel three-jet microreactor for localized metal-organic chemical vapour deposition of gallium arsenide: design and simulation

    Science.gov (United States)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2016-08-01

    We present a novel three-jet microreactor design for localized deposition of gallium arsenide (GaAs) by low-pressure Metal-Organic Chemical Vapour Deposition (MOCVD) for semiconductor devices, microelectronics and solar cells. Our approach is advantageous compared to the standard lithography and etching technology, since it preserves the nanostructure of the deposited material, it is less time-consuming and less expensive. We designed two versions of reactor geometry with a 10-micron central microchannel for precursor supply and with two side jets of a dilutant to control the deposition area. To aid future experiments, we performed computational modeling of a simplified-geometry (twodimensional axisymmetric) microreactor, based on Navier-Stokes equations for a laminar flow of chemically reacting gas mixture of Ga(CH3)3-AsH3-H2. Simulation results show that we can achieve a high-rate deposition (over 0.3 μm/min) on a small area (less than 30 μm diameter). This technology can be used in material production for microelectronics, optoelectronics, photovoltaics, solar cells, etc.

  19. PENGARUH KATALIS Co DAN Fe TERHADAP KARAKTERISTIK CARBON NANOTUBES DARI GAS ASETILENA DENGAN MENGGUNAKAN PROSES CATALYTIC CHEMICAL VAPOUR DEPOSITION (CCVD

    Directory of Open Access Journals (Sweden)

    Tutuk Djoko Kusworo

    2013-11-01

    Full Text Available EFFECT OF Co AND Fe ON CARBON NANOTUBES CHARACTERISTICS FROM ACETYLENE USING CATALYTIC CHEMICAL VAPOUR DEPOSITION (CCVD PROCESS. Carbon Nanotubes (CNTs is one of the most well known nano-technology applications which the most of attracting the attention of researchers, because it has more advantages than other materials. The application of the CNT has extended into various aspects, such as electronics, materials, biology and chemistry. This research uses a system of Catalytic Chemical Vapour Deposition (CCVD, which aims to determine the influence of Co and Fe as a catalyst and zeolite 4A as a support catalyst with acetylene gas (C2H2 as carbon source in the synthesis of Carbon Nanotubes (CNTs. In this experiment, used the ratio of acetylene gas and flow rate of N2 gas is 1:1 by weight of the catalyst Co/Zeolite and Fe/Zeolite amounted to 0.5 grams at the operating temperature of 700oC for 20 minutes. N2 gas serves to minimize the occurrence of oxidation reaction (explosion when operating. From analysis result by Scanning Electron Microscopy (SEM shows the CNTs formed a type of MWNT with different of diameter size and product weight, depending on the size of the active component concentration on the catalyst. The larger of active components produced CNTs with larger diameter, whereas product weight syntheses result smaller. Use of the catalyst Fe/Zeolite produce CNTs with a diameter larger than the catalyst Co/Zeolite.  Carbon Nanotubes (CNTs merupakan salah satu aplikasi nanoteknologi yang paling terkenal dan banyak menarik perhatian para peneliti, karena memiliki beberapa kelebihan daripada material lainnya. Aplikasi dari CNT telah merambah ke berbagai aspek, seperti bidang elektronika, material, biologi dan kimia. Penelitian ini menggunakan sistem Catalytic Chemical Vapour Deposition (CCVD yang bertujuan untuk mengetahui pengaruh variasi Cobalt (Co dan Ferrum (Fe sebagai katalis dan zeolit tipe 4A sebagai penyangga katalis dengan gas

  20. Detection of chemical substances in water using an oxide nanowire transistor covered with a hydrophobic nanoparticle thin film as a liquid-vapour separation filter

    Science.gov (United States)

    Lim, Taekyung; Lee, Jonghun; Ju, Sanghyun

    2016-08-01

    We have developed a method to detect the presence of small amounts of chemical substances in water, using a Al2O3 nanoparticle thin film covered with phosphonic acid (HDF-PA) self-assembled monolayer. The HDF-PA self-assembled Al2O3 nanoparticle thin film acts as a liquid-vapour separation filter, allowing the passage of chemical vapour while blocking liquids. Prevention of the liquid from contacting the SnO2 nanowire and source-drain electrodes is required in order to avoid abnormal operation. Using this characteristic, the concentration of chemical substances in water could be evaluated by measuring the current changes in the SnO2 nanowire transistor covered with the HDF-PA self-assembled Al2O3 nanoparticle thin film.

  1. Detection of chemical substances in water using an oxide nanowire transistor covered with a hydrophobic nanoparticle thin film as a liquid-vapour separation filter

    Directory of Open Access Journals (Sweden)

    Taekyung Lim

    2016-08-01

    Full Text Available We have developed a method to detect the presence of small amounts of chemical substances in water, using a Al2O3 nanoparticle thin film covered with phosphonic acid (HDF-PA self-assembled monolayer. The HDF-PA self-assembled Al2O3 nanoparticle thin film acts as a liquid-vapour separation filter, allowing the passage of chemical vapour while blocking liquids. Prevention of the liquid from contacting the SnO2 nanowire and source-drain electrodes is required in order to avoid abnormal operation. Using this characteristic, the concentration of chemical substances in water could be evaluated by measuring the current changes in the SnO2 nanowire transistor covered with the HDF-PA self-assembled Al2O3 nanoparticle thin film.

  2. Sub-micro a-C:H patterning of silicon surfaces assisted by atmospheric-pressure plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Boileau, Alexis; Gries, Thomas; Noël, Cédric; Perito Cardoso, Rodrigo; Belmonte, Thierry

    2016-11-01

    Micro and nano-patterning of surfaces is an increasingly popular challenge in the field of the miniaturization of devices assembled via top-down approaches. This study demonstrates the possibility of depositing sub-micrometric localized coatings—spots, lines or even more complex shapes—made of amorphous hydrogenated carbon (a-C:H) thanks to a moving XY stage. Deposition was performed on silicon substrates using chemical vapor deposition assisted by an argon atmospheric-pressure plasma jet. Acetylene was injected into the post-discharge region as a precursor by means of a glass capillary with a sub-micrometric diameter. A parametric study was carried out to study the influence of the geometric configurations (capillary diameter and capillary-plasma distance) on the deposited coating. Thus, the patterns formed were investigated by scanning electron microscopy and atomic force microscopy. Furthermore, the chemical composition of large coated areas was investigated by Fourier transform infrared spectroscopy according to the chosen atmospheric environment. The observed chemical bonds show that reactions of the gaseous precursor in the discharge region and both chemical and morphological stability of the patterns after treatment are strongly dependent on the surrounding gas. Various sub-micrometric a-C:H shapes were successfully deposited under controlled atmospheric conditions using argon as inerting gas. Overall, this new process of micro-scale additive manufacturing by atmospheric plasma offers unusually high-resolution at low cost.

  3. Influence of metal organic chemical vapour deposition growth conditions on vibrational and luminescent properties of ZnO nanorods

    Science.gov (United States)

    Montenegro, D. N.; Hortelano, V.; Martínez, O.; Martínez-Tomas, M. C.; Sallet, V.; Muñoz-Sanjosé, V.; Jiménez, J.

    2013-04-01

    A detailed optical characterization by means of micro Raman and cathodoluminescence spectroscopy of catalyst-free ZnO nanorods grown by atmospheric-metal organic chemical vapour deposition has been carried out. This characterization has allowed correlating the growth conditions, in particular the precursors partial-pressures and growth time, with the optical properties of nanorods. It has been shown that a high Zn supersaturation can favor the incorporation of nonradiative recombination centers, which can tentatively be associated with ZnI-related defects. Characterization of individual nanorods has evidenced that ZnI-related defects have a tendency to accumulate in the tip part of the nanorods, which present dark cathodoluminescence contrast with respect to the nanorods bottom. The effect of a ZnO buffer layer on the properties of the nanorods has been also investigated, showing that the buffer layer improves the luminescence efficiency of the ZnO nanorods, revealing a significant reduction of the concentration of nonradiative recombination centers.

  4. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A. [LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France); Bisaro, R.; Servet, B.; Garry, G. [Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Barjon, J. [GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

    2012-03-19

    In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

  5. Role of Duty Ratio in Diamond Growth by Pulsed DC-Bias Enhanced Hot Filament Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    MENG Liang; ZHOU Haiyang; ZHU Xiaodong

    2007-01-01

    In this study, the role of the pulse duty ratio was investigated during the deposition of diamond films in a hot filament chemical vapour deposition reactor with a pulsed-dc biased substrate positively relative to the hot filaments. The voltage-current characteristics showed that the discharge current rose with the increase of biasing voltage, which was modified by the duty ratio. Before deposition, two approaches were adopted for the pre-treatment of the silicon substrates, respectively, and the substrates were scratched by diamond paste or seeded by diamond powders using the so-called 'soft dry polished' technique. Diamond films were deposited under a fixed discharge power by changing the duty ratios. In the first group with scratched substrates, it was found that under a high duty ratio the diamond grew slowly with quite poor nucleation, while in the second case a high duty ratio induced a high deposition rate and good diamond quality. Reactive hydrocarbon species with high energy are essential for the initial nucleation process, which is more effectively achieved at a high biasing voltage in the condition of a low duty ratio. In the film growth process, the large discharge current at a high duty ratio represents an increased concentration of electrons and reactive species as well, promoting the growth of diamond films.

  6. Atmospheric pressure chemical vapour deposition of SnSe and SnSe{sub 2} thin films on glass

    Energy Technology Data Exchange (ETDEWEB)

    Boscher, Nicolas D.; Carmalt, Claire J.; Palgrave, Robert G. [Department of Chemistry, University College London, 20 Gordon Street, London, WC1H OAJ (United Kingdom); Parkin, Ivan P. [Department of Chemistry, University College London, 20 Gordon Street, London, WC1H OAJ (United Kingdom)], E-mail: i.p.parkin@ucl.ac.uk

    2008-06-02

    Atmospheric pressure chemical vapour deposition of tin monoselenide and tin diselenide films on glass substrate was achieved by reaction of diethyl selenide with tin tetrachloride at 350-650 {sup o}C. X-ray diffraction showed that all the films were crystalline and matched the reported pattern for SnSe and/or SnSe{sub 2}. Wavelength dispersive analysis by X-rays show a variable Sn:Se ratio from 1:1 to 1:2 depending on conditions. The deposition temperature, flow rates and position on the substrate determined whether mixed SnSe-SnSe{sub 2}, pure SnSe or pure SnSe{sub 2} thin films could be obtained. SnSe films were obtained at 650 {sup o}C with a SnCl{sub 4} to Et{sub 2}Se ratio greater than 10. The SnSe films were silver-black in appearance and adhesive. SnSe{sub 2} films were obtained at 600-650 {sup o}C they had a black appearance and were composed of 10 to 80 {mu}m sized adherent crystals. Films of SnSe only 100 nm thick showed complete absorbtion at 300-1100 nm.

  7. Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Liang Song; Wang Wei; Zhu Hong-Liang; Pan Jiao-Qing; Zhao Ling-Juan; Wang Lu-Feng; Zhou Fan; Shu Hui-Yun; Bian Jing; An Xin

    2008-01-01

    Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with different growth procedures prepared by metalorganic chemical vapour deposition are studied.PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample.During rapid thermal annealing,however,the low growth rate sample shows a greater blueshift of PL peak wavelength.This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample.A growth technique including growth interruption and in-situ annealing,named indium flush method,is used during the growth of GaAs cap layer,which can flatten the GaAs surface effectively.Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width,it is essential for the fabrication of room temperature working QD lasers.

  8. Temperature-dependent Hall effect studies of ZnO thin films grown by metalorganic chemical vapour deposition

    Science.gov (United States)

    Roro, K. T.; Kassier, G. H.; Dangbegnon, J. K.; Sivaraya, S.; Westraadt, J. E.; Neethling, J. H.; Leitch, A. W. R.; Botha, J. R.

    2008-05-01

    The electrical properties of zinc oxide (ZnO) thin films of various thicknesses (0.3-4.4 µm) grown by metalorganic chemical vapour deposition on glass substrates have been studied by using temperature-dependent Hall-effect (TDH) measurements in the 18-300 K range. The high quality of the layers has been confirmed with x-ray diffraction, transmission electron microscopy, scanning electron microscopy and photoluminescence techniques. TDH measurements indicate the presence of a degenerate layer which significantly influences the low-temperature data. It is found that the measured mobility generally increases with increasing layer thickness, reaching a value of 120 cm2 V-1 s-1 at room temperature for the 4.4 µm thick sample. The lateral grain size of the layers is also found to increase with thickness indicating a clear correlation between the size of the surface grains and the electrical properties of corresponding films. Theoretical fits to the Hall data suggest that the bulk conduction of the layers is dominated by a weakly compensated donor with activation energy in the 33-41 meV range and concentration of the order of 1017 cm-3, as well as a total acceptor concentration of mid-1015 cm-3. Grain boundary scattering is found to be an important limiting factor of the mobility throughout the temperature range considered.

  9. Influence of hydrogen on chemical vapour synthesis of different carbon nanostructures using propane as precursor and nickel as catalyst

    Indian Academy of Sciences (India)

    R K Sahoo; H Mamgain; C Jacob

    2014-10-01

    The role of hydrogen in the catalytic chemical vapour deposition of carbon nanotubes using sputtered nickel thin film as a catalyst is explained in this work. The growth of different carbon nanostructures with the variation in the precursor gas content was studied by keeping all other process parameters constant and using sputtered Ni thin film as a catalyst. The catalyst granule size, its external morphology and the resulting products were analysed. Carbon nanotubes (CNTs), carbon nanofibres (CNFs) and carbon nanoribbons (CNRs) were observed under different growth conditions. The different conditions of growth leading to form tubes, fibres or ribbons were analysed by varying the flow ratio of propane and hydrogen gas during the high temperature growth. Scanning and transmission electron microscopies confirmed the above structures under different growth conditions. The role of hydrogen on the surface passivation behaviour of the Ni catalyst and its correlative effect on the growth of carbon nanostructures is analysed. This direct approach can, in principle, be used to synthesize different types of carbon nanostructures by tailoring the hydrogen concentration.

  10. Optical and electrical properties of ZrSe3 single crystals grown by chemical vapour transport technique

    Indian Academy of Sciences (India)

    Kaushik Patel; Jagdish Prajapati; Rajiv Vaidya; S G Patel

    2005-08-01

    Single crystals of the lamellar compound, ZrSe3, were grown by chemical vapour transport technique using iodine as a transporting agent. The grown crystals were characterized with the help of energy dispersive analysis by X-ray (EDAX), which gave confirmation about the stoichiometry. The optical band gap measurement of as grown crystals was carried out with the help of optical absorption spectra in the range 700–1450 nm. The indirect as well as direct band gap of ZrSe3 were found to be 1.1 eV and 1.47 eV, respectively. The resistivity of the as grown crystals was measured using van der Pauw method. The Hall parameters of the grown crystals were determined at room temperature from Hall effect measurements. Electrical resistivity measurements were performed on this crystal in the temperature range 303–423 K. The crystals were found to exhibit semiconducting nature in this range. The activation energy and anisotropy measurements were carried out for this crystal. Pressure dependence of electrical resistance was studied using Bridgman opposed anvils set up up to 8 GPa. The semiconducting nature of ZrSe3 single crystal was inferred from the graph of resistance vs pressure. The results obtained are discussed in detail.

  11. The incorporation of preformed metal nanoparticles in zinc oxide thin films using aerosol assisted chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Salauen, A., E-mail: amelie.salaun@tyndall.i [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland); Hamilton, J.A.; Iacopino, D. [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland); Newcomb, S.B. [Glebe Scientific Ltd., Newport, County Tipperary (Ireland); Nolan, M.G.; Padmanabhan, S.C.; Povey, I.M.; Salauen, M.; Pemble, M.E. [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland)

    2010-09-30

    The feasibility of Aerosol Assisted Chemical Vapour Deposition (AA-CVD) has been investigated for the growth of zinc oxide (ZnO) films containing preformed metal nanoparticles. The deposition parameters were first established for ZnO thin films, by varying the heating configuration, substrate temperature and deposition time. Films were characterised using Scanning Electron Microscopy and X-Ray Diffraction. As-deposited films, grown at 250 {sup o}C, were mostly amorphous and transformed to highly crystalline Wurtzite ZnO at higher substrate temperatures (400-450 {sup o}C). A change in the preferential orientation of the films was observed upon changing (i), the substrate temperature or (ii), the heating configuration. Following this, the applicability of the AA-CVD process for the incorporation of preformed nanoparticles (platinum and gold) in ZnO thin films was investigated. It was found that surface agglomeration occurred, such that the ZnO films were capped with an inhomogeneous coverage of the metal. These layers were characterised using Transmission Electron Microscopy and Electron Diffraction. A possible mechanism for the formation of these metal surface clusters is presented.

  12. Surface and Compositional Study of Graphene grown on Lithium Niobate (LiNbO3) substrates by Chemical Vapour Deposition

    Science.gov (United States)

    Karamat, Shumaila; Celik, Umit; Oral, Ahmet

    The diversity required in the designing of electronic devices motivated the community to always attempt for new functional materials and device structures. Graphene is considered as one of the most promising candidate materials for future electronics and carbon based devices. It is very exciting to combine graphene with new dielectric materials which exhibit multifunctional properties. Lithium Niobate exhibits ferro-, pyro-, and piezoelectric properties with large electro-optic, acousto-optic, and photoelastic coefficients as well as strong photorefractive and photovoltaic effects which made it one of the most extensively studied materials over the last 50 years. We used ambient pressure chemical vapour deposition to grow graphene on LiNbO3 substrates without any catalyst. The growth was carried out in presence of methane, argon and hydrogen. AFM imaging showed very unique structures on the surface which contains triangular domains. X-ray photoelectron spectroscopy (XPS) was used to get information about the presence of necessary elements, their bonding with LiNbO3 substrates. Detailed characterization is under process which will be presented later.

  13. Optimization of parameters by Taguchi method for controlling purity of carbon nanotubes in chemical vapour deposition technique.

    Science.gov (United States)

    Dasgupta, K; Sen, D; Mazumder, S; Basak, C B; Joshi, J B; Banerjee, S

    2010-06-01

    The process parameters (viz. temperature of synthesis, type of catalyst, concentration of catalyst and type of catalyst-support material) for controlling purity of carbon nanotubes synthesized by catalytic chemical vapour deposition of acetylene have been optimized by analyzing the experimental results using Taguchi method. It has been observed that the catalyst-support material has the maximum (59.4%) and the temperature of synthesis has the minimum effect (2.1%) on purity of the nanotubes. At optimum condition (15% ferrocene supported on carbon black at the synthesis temperature of 700 degrees C) the purity of nanotubes was found out to be 96.2% with yield of 1900%. Thermogravimetry has been used to assess purity of nanotubes. These nantubes have been further characterized by scanning electron microscopy, transmission electron microscopy and Raman Spectroscopy. Small angle neutron scattering has been used to find out their average inner and outer diameter using an appropriate model. The nanotubes are well crystallized but with wide range of diameter varying between 20-150 nm.

  14. In situ high temperature XRD studies of ZnO nanopowder prepared via cost effective ultrasonic mist chemical vapour deposition

    Indian Academy of Sciences (India)

    Preetam Singh; Ashvani Kumar; Ajay Kaushal; Davinder Kaur; Ashish Pandey; R N Goyal

    2008-06-01

    Ultrasonic mist chemical vapour deposition (UM–CVD) system has been developed to prepare ZnO nanopowder. This is a promising method for large area deposition at low temperature inspite of being simple, inexpensive and safe. The particle size, lattice parameters and crystal structure of ZnO nanopowder are characterized by in situ high temperature X-ray diffraction (XRD). Surface morphology of powder was studied using transmission electron microscopy (TEM) and field emission electron microscope (FESEM). The optical properties are observed using UV-visible spectrophotometer. The influence of high temperature vacuum annealing on XRD pattern is systematically studied. Results of high temperature XRD showed prominent 100, 002 and 101 reflections among which 101 is of highest intensity. With increase in temperature, a systematic shift in peak positions towards lower 2 values has been observed, which may be due to change in lattice parameters. Temperature dependence of lattice constants under vacuum shows linear increase in their values. Diffraction patterns obtained from TEM are also in agreement with the XRD data. The synthesized powder exhibited the estimated direct bandgap (g) of 3.43 eV. The optical bandgap calculated from Tauc’s relation and the bandgap calculated from the particle size inferred from XRD were in agreement with each other.

  15. Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics.

    Science.gov (United States)

    Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol; Park, Won-Tae; Kim, Mincheol; Lee, Seungwon; Bong, Jae Hoon; Noh, Yong-Young; Cho, Byung Jin; Yoo, Seunghyup; Im, Sung Gap

    2015-06-01

    Insulating layers based on oxides and nitrides provide high capacitance, low leakage, high breakdown field and resistance to electrical stresses when used in electronic devices based on rigid substrates. However, their typically high process temperatures and brittleness make it difficult to achieve similar performance in flexible or organic electronics. Here, we show that poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) prepared via a one-step, solvent-free technique called initiated chemical vapour deposition (iCVD) is a versatile polymeric insulating layer that meets a wide range of requirements for next-generation electronic devices. Highly uniform and pure ultrathin films of pV3D3 with excellent insulating properties, a large energy gap (>8 eV), tunnelling-limited leakage characteristics and resistance to a tensile strain of up to 4% are demonstrated. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable pV3D3 to be grown conformally on plastic substrates to yield flexible field-effect transistors as well as on a variety of channel layers, including organics, oxides, and graphene.

  16. Metal-organic chemical vapour deposition of lithium manganese oxide thin films via single solid source precursor

    Directory of Open Access Journals (Sweden)

    Oyedotun K.O.

    2015-12-01

    Full Text Available Lithium manganese oxide thin films were deposited on sodalime glass substrates by metal organic chemical vapour deposition (MOCVD technique. The films were prepared by pyrolysis of lithium manganese acetylacetonate precursor at a temperature of 420 °C with a flow rate of 2.5 dm3/min for two-hour deposition period. Rutherford backscattering spectroscopy (RBS, UV-Vis spectrophotometry, X-ray diffraction (XRD spectroscopy, atomic force microscopy (AFM and van der Pauw four point probe method were used for characterizations of the film samples. RBS studies of the films revealed fair thickness of 1112.311 (1015 atoms/cm2 and effective stoichiometric relationship of Li0.47Mn0.27O0.26. The films exhibited relatively high transmission (50 % T in the visible and NIR range, with the bandgap energy of 2.55 eV. Broad and diffused X-ray diffraction patterns obtained showed that the film was amorphous in nature, while microstructural studies indicated dense and uniformly distributed layer across the substrate. Resistivity value of 4.9 Ω·cm was obtained for the thin film. Compared with Mn0.2O0.8 thin film, a significant lattice absorption edge shift was observed in the Li0.47Mn0.27O0.26 film.

  17. Direct synthesis of solid and hollow carbon nanospheres over NaCl crystals using acetylene by chemical vapour deposition

    Science.gov (United States)

    Chandra Kishore, S.; Anandhakumar, S.; Sasidharan, M.

    2017-04-01

    Carbon nanospheres (CNS) with hollow and solid morphologies have been synthesised by a simple chemical vapour deposition method using acetylene as a carbon precursor. Sodium chloride (NaCl) powder as a template was used for the direct growth of CNS via facile and low-cost approach. The effect of various temperatures (500 °C, 600 °C and 700 °C) and acetylene flow rates were investigated to study the structural evolution on the carbon products. The purified CNS thus obtained was characterized by various physicochemical techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and cyclicvoltametry. The synthesised hollow nanospheres were investigated as anode materials for Li-ion batteries. After 25 cycles of repeated charge/discharge cycles, the discharge and charge capacities were found to be 574 mAh/g and 570 mAh/g, respectively which are significantly higher than the commercial graphite samples.

  18. InGa1−N fibres grown on Au/SiO2 by chemical vapour deposition

    Indian Academy of Sciences (India)

    A Ramos-Carrazco; R García; M Barboza-Flores; R Rangel

    2014-12-01

    The growth of InGa1−N films ( = 0.1 and = 0.2) on a thin gold layer (Au/SiO2) by chemical vapour deposition (CVD) at 650 °C is reported. As a novelty, the use of a Ga–In metallic alloy to improve the indium incorporation in the InGa1−N is proposed. The results of high quality InGa1−N films with a thickness of three micrometres and the formation of microfibres on the surface are presented. A morphological comparison between the InGa1−N and GaN films is shown as a function of the indium incorporation. The highest crystalline InGa1−N films structure was obtained with an indium composition of = 0.20. Also, the preferential growth on the (002) plane over In0.2Ga0.8N was observed by means of X-ray diffraction. The thermoluminescence (TL) of the InGa1−N films after beta radiation exposure was measured indicating the presence of charge trapping levels responsible for a broad TL glow curve with a maximum intensity around 150 °C. The TL intensity was found to depend on composition being higher for = 0.1 and increases as radiation dose increases.

  19. Low temperature silicon nitride by hot wire chemical vapour deposition for the use in impermeable thin film encapsulation on flexible substrates.

    Science.gov (United States)

    Spee, D A; van der Werf, C H M; Rath, J K; Schropp, R E I

    2011-09-01

    High quality non porous silicon nitride layers were deposited by hot wire chemical vapour deposition at substrate temperatures lower than 110 degrees C. The layer properties were investigated using FTIR, reflection/transmission measurements and 1:6 buffered HF etching rate. A Si-H peak position of 2180 cm(-1) in the Fourier transform infrared absorption spectrum indicates a N/Si ratio around 1.2. Together with a refractive index of 1.97 at a wavelength of 632 nm and an extinction coefficient of 0.002 at 400 nm, this suggests that a transparent high density silicon nitride material has been made below 110 degrees C, which is compatible with polymer films and is expected to have a high impermeability. To confirm the compatibility with polymer films a silicon nitride layer was deposited on poly(glycidyl methacrylate) made by initiated chemical vapour deposition, resulting in a highly transparent double layer.

  20. Surface chemistry of the preferred (111) and (220) crystal oriented microcrystalline Si films by radio-frequency plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ohba, Daisuke; Koshino, Hideto; Tang, Zeguo; Shirai, Hajime [Graduate School of Science and Engineering, Saitama University, Sakura (Japan)

    2011-10-15

    The surface chemistry of the preferentially (111) and (220) crystal orientated chlorinated hydrogenated microcrystalline silicon ({mu}c-Si:H:Cl) films was studied using a rf PE-CVD of a dichlorosilane (SiH{sub 2}Cl{sub 2}) and H{sub 2} mixture. The growing surface for the preferentially (220) crystal oriented {mu}c-Si:H:Cl films included much voids and dangling bonds, whereas the growing surface with the preferential (111) crystal orientation was chemically stable relatively. These findings suggest that the sticking process of deposition precursors and/or the reconstruction of Si clusters within the sub-surface determine the preferential crystal orientation. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Titania Coated Mica via Chemical Vapour Deposition, Post N-doped by Liquid Ammonia Treatment

    Science.gov (United States)

    Powell, Michael J.; Parkin, Ivan P.

    TiO2 films were successfully grown on synthetic mica powders via Chemical Vapor Deposition (CVD). The CVD rig is a cold-walled design that allows surface coverage of a powder to be successfully achieved. The TiO2 was produced by the reaction between TiCl4 and Ethyl Acetate. The powder produced could be successfully N-doped using post liquid ammonia treatment. The TiO2 powder produced could have potential applications in self-cleaning surfaces or antimicrobial paints.

  2. A Passively Mode-Locked Diode-End-Pumped Nd:YAG Laser with a Semiconductor Saturable Absorber Mirror Grown by Metal Organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    王勇刚; 马骁宇; 李春勇; 张治国; 张丙元; 张志刚

    2003-01-01

    We report the experimental results of a mode-locked diode-end-pumped Nd:YAG laser with a semiconductor saturable absorber mirror(SESAM)from which we achieved a 10ps pulse duration at 150MHz repetition rate.The SESAM was grown by metal organic chemical vapour deposition at low temperature.The recovery time was measured to be 0.5 ps,indicating the potential pulse compression to sub-picoseconds.

  3. Diamond films grown on seeded substrates by hot-filament chemical vapour deposition with H sub 2 as the only feeding gas

    CERN Document Server

    LiuHongWu; Gao Chun Xi; Han Yong; Luo Ji Feng; Zou Guang Tian; Wen Chao

    2002-01-01

    Diamond films have been grown on polished Si substrates seeded with nanocrystalline diamond powder colloid using hot-filament chemical vapour deposition. Instead of using the conventional gaseous carbon source, a carbonized W filament was used as the carbon source. The only feeding gas was hydrogen. Compared with those produced by traditional methods, the polycrystalline diamond grown by this new method has smaller grain size. The growth mechanism is also discussed.

  4. Formation of size-controlled silicon nanocrystals in plasma enhanced chemical vapor deposition grown SiO{sub x}N{sub y}/SiO{sub 2} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Hartel, A.M., E-mail: andreas.hartel@imtek.uni-freiburg.de [IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Hiller, D.; Gutsch, S. [IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Loeper, P. [Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110 Freiburg (Germany); Estrade, S. [MIND-IN2UB, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); TEM-MAT, SCT- UB, Sole i Sabaris 1, 08028 Barcelona (Spain); Peiro, F.; Garrido, B. [MIND-IN2UB, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Zacharias, M. [IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany)

    2011-10-31

    Size controlled silicon nanocrystals (SiNC) in silicon oxynitride matrix were prepared using plasma enhanced chemical vapor deposition. The as-deposited superlattices (SLs) and the corresponding bulk films were treated by thermal annealing. Hydrogen effusion was performed during the heating up by choosing a sufficiently low heating ramp. The phase separation of the layers into SiNCs and surrounding oxynitride matrix was studied at temperatures of up to 1150 {sup o}C. The influence of the annealing temperature on SiO{sub x}N{sub y}/SiO{sub 2} - SLs with varying SiO{sub x}N{sub y} layer thickness was investigated by several analytical techniques including variable angle spectroscopic ellipsometry, photoluminescence (PL) spectroscopy, x-ray photoelectron spectroscopy, Fourier transform infrared spectrometry (FTIR) and transmission electron microscopy (TEM). Before annealing FTIR investigations show in addition to the expected Si-O bonds also the formation of nitrogen and hydrogen related bonds. The shift of the Si-O-Si stretching vibration to higher wave numbers after annealing indicates phase separation. The disappearance of the hydrogen related bonds indicates the hydrogen effusion. The PL signal is rising significantly with increasing annealing temperature and the PL peak position is strongly related to the thickness of the SiO{sub x}N{sub y} sublayers due to quantum confinement effects. TEM investigations confirm the size-controlled growth of SiNCs within the oxynitride matrix. The role of incorporated nitrogen and hydrogen is discussed.

  5. A comparison of various surface charge transfer hole doping of graphene grown by chemical vapour deposition

    Science.gov (United States)

    Chandramohan, S.; Seo, Tae Hoon; Janardhanam, V.; Hong, Chang-Hee; Suh, Eun-Kyung

    2017-10-01

    Charge transfer doping is a renowned route to modify the electrical and electronic properties of graphene. Understanding the stability of potentially important charge-transfer materials for graphene doping is a crucial first step. Here we present a systematic comparison on the doping efficiency and stability of single layer graphene using molybdenum trioxide (MoO3), gold chloride (AuCl3), and bis(trifluoromethanesulfonyl)amide (TFSA). Chemical dopants proved to be very effective, but MoO3 offers better thermal stability and device fabrication compatibility. Single layer graphene films with sheet resistance values between 100 and 200 ohm/square were consistently produced by implementing a two-step growth followed by doping without compromising the optical transmittance.

  6. A nucleation and growth model of vertically-oriented carbon nanofibers or nanotubes by plasma-enhanced catalytic chemical vapor deposition.

    Science.gov (United States)

    Cojocaru, C S; Senger, A; Le Normand, F

    2006-05-01

    Carbon nanofibers are grown by direct current and hot filaments-activated catalytic chemical vapor deposition while varying the power of the hot filaments. Observations of these carbon nanofibers vertically oriented on a SiO2 (8 nm thick)/Si(100) substrate covered with Co nanoparticles (10-15 nm particle size) by Scanning Electron and Transmission Electron Microscopies show the presence of a graphitic "nest" either on the surface of the substrate or at the end of the specific nanofiber that does not encapsulate the catalytic particle. Strictly in our conditions, the activation by hot filaments is required to grow nanofibers with a C2H2 - H2 gas mixture, as large amounts of amorphous carbon cover the surface of the substrate without using hot filaments. From these observations as well as data of the literature, it is proposed that the nucleation of carbon nanofibers occurs through a complex process involving several steps: carbon concentration gradient starting from the catalytic carbon decomposition and diffusion from the surface of the catalytic nanoparticles exposed to the activated gas and promoted by energetic ionic species of the gas phase; subsequent graphitic condensation of a "nest" at the interface of the Co particle and substrate. The large concentration of highly reactive hydrogen radicals mainly provided by activation with hot filaments precludes further spreading out of this interfacial carbon nest over the entire surface of the substrate and thus selectively orientates the growth towards the condensation of graphene over facets that are perpendicular to the surface. Carbon nanofibers can then be grown within the well-known Vapor-Liquid-Solid process. Thus the effect of energetic ions and highly reactive neutrals like atomic hydrogen in the preferential etching of carbon on the edge of graphene shells and on the broadening of the carbon nanofiber is underlined.

  7. Theoretical study of the gas-phase decomposition of Pb[(C^sub 6^H^sub 5^)^sub 2^PSSe]^sub 2^ single-source precursor for the chemical vapour deposition of binary and ternary lead chalcogenides

    National Research Council Canada - National Science Library

    Francis Opoku; Noah K Asare-Donkor; Anthony A Adimado

    2015-01-01

      A theoretical study of Pb(II) square planar thioselenophosphinate, Pb[(C...H...)...PSSe]... precursor for the chemical vapour deposition process of preparing lead chalcogenides, has been carried out...

  8. Theoretical study of the gas-phase decomposition of Pb[[[.sub.2]PSSE].sub.2] single-source precursor for the chemical vapour deposition of binary and ternary lead chalcogenides

    National Research Council Canada - National Science Library

    Opoku, Francis; Asare-Donkor, Noah K; Adimado, Anthony A

    2015-01-01

    A theoretical study of Pb(II) square planar thioselenophosphinate, Pb[[[([C.sub.6][H.sub.5]).sub.2]PSSE].sub.2] precursor for the chemical vapour deposition process of preparing lead chalcogenides, has been carried out...

  9. Theoretical study of the gas-phase decomposition of Pb[(C6H5)2PSSe]2 single-source precursor for the chemical vapour deposition of binary and ternary lead chalcogenides

    National Research Council Canada - National Science Library

    Adimado, Anthony A; Opoku, Francis; Asare-Donkor, Noah K

    2015-01-01

    A theoretical study of Pb(II) square planar thioselenophosphinate, Pb[(C 6 H 5 ) 2 PSSe] 2 precursor for the chemical vapour deposition process of preparing lead chalcogenides, has been carried out...

  10. Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    A. H. Ramelan

    2010-01-01

    Full Text Available Epitaxial AlxGa1-xSb layers on GaAs substrate have been grown by atmospheric pressure metalorganic chemical vapour deposition using TMAl, TMGa, and TMSb. We report the effect of V/III flux ratio and growth temperature on growth rate, surface morphology, electrical properties, and composition analysis. A growth rate activation energy of 0.73 eV was found. For layers grown on GaAs at 580∘C and 600∘C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580∘C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology and its hole mobility and carrier concentration are equal to 237 cm2/V.s and 4.6 × 1017 cm-3, respectively, at 77 K. The net hole concentration of unintentionally doped AlGaSb was found to be significantly decreased with the increased of aluminium concentration. All samples investigated show oxide layers (Al2O3, Sb2O3, and Ga2O5 on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. Carbon content on the surface was also very high.

  11. Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD).

    Science.gov (United States)

    Böke, Frederik; Giner, Ignacio; Keller, Adrian; Grundmeier, Guido; Fischer, Horst

    2016-07-20

    Densely sintered aluminum oxide (α-Al2O3) is chemically and biologically inert. To improve the interaction with biomolecules and cells, its surface has to be modified prior to use in biomedical applications. In this study, we compared two deposition techniques for adhesion promoting SiOx films to facilitate the coupling of stable organosilane monolayers on monolithic α-alumina; physical vapor deposition (PVD) by thermal evaporation and plasma enhanced chemical vapor deposition (PE-CVD). We also investigated the influence of etching on the formation of silanol surface groups using hydrogen peroxide and sulfuric acid solutions. The film characteristics, that is, surface morphology and surface chemistry, as well as the film stability and its adhesion properties under accelerated aging conditions were characterized by means of X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), inductively coupled plasma-optical emission spectroscopy (ICP-OES), and tensile strength tests. Differences in surface functionalization were investigated via two model organosilanes as well as the cell-cytotoxicity and viability on murine fibroblasts and human mesenchymal stromal cells (hMSC). We found that both SiOx interfaces did not affect the cell viability of both cell types. No significant differences between both films with regard to their interfacial tensile strength were detected, although failure mode analyses revealed a higher interfacial stability of the PE-CVD films compared to the PVD films. Twenty-eight day exposure to simulated body fluid (SBF) at 37 °C revealed a partial delamination of the thermally deposited PVD films whereas the PE-CVD films stayed largely intact. SiOx layers deposited by both PVD and PE-CVD may thus serve as viable adhesion-promoters for subsequent organosilane coupling agent binding to α-alumina. However, PE-CVD appears to be favorable for long-term direct film exposure to aqueous

  12. Surface functionalization of PET fabric with atmospheric pressure plasma enhanced chemical vapor deposition%常压等离子体增强化学气相沉积法表面功能化聚酯织物

    Institute of Scientific and Technical Information of China (English)

    K. H. Kale; S. S. Palaskar; 刘鹏(译); 罗艳(校)

    2012-01-01

    Plasma technology is emerging as a novel and environmentally friendly technology for surface modification of textile materials. It is possible to deposit very thin film with specific functional properties on the surface of textiles. The current study describes a novel approach for surface modification of 100% polyester textiles with plasma enhanced chemical vapor deposition (PECVD). The chemical and structural nature of plasma polymers deposited at the surface of the samples with respect to discharge power was studied with FTIR spectroscopy. The functional property i. e. water repellency imparted was determined with spray test and contact angle measurement.%对于纺织材料的表面改性来说,等离子体技术正成为一种新兴且环境友好的技术。等离子体技术在纺织品表面可沉积具有特殊功能的薄膜。阐述了一种常压等离子体增强化学气相沉积法表面改性100%聚酯织物的新型方法。通过傅里叶变换红外光谱研究了沉积于样品表面上相对于放电功率的等离子体聚合物化学和结构性质。采用雾化试验和接触角测量赋予织物诸如疏水等的功能特性。

  13. Predicting Vapour Pressures of Organic Compounds from Their Chemical Structure for Classification According to the VOCDirective and Risk Assessment in General

    Directory of Open Access Journals (Sweden)

    Frands Nielsen

    2001-03-01

    Full Text Available The use of organic compounds in the European Union will in the future be regulated in accordance with the Council Directive 1999/13/EC of 11 March 1999 [1]. In this directive, any organic compound is considered to be a volatile organic compound (VOC if it has a vapour pressure of 10 Pa or more at 20oC, or has a corresponding volatility under the particular condition of use. Introduction of such a limit will sometimes create problems, because vapour pressures cannot be determined with an infinite accuracy. Published data on vapour pressures for a true VOC will sometimes be found to be below 10 Pa and vice versa. When the same limit was introduced in the USA, a considerable amount of time and money were spent in vain on comparing incommensurable data [2]. In this paper, a model is presented for prediction of the vapour pressures of VOCs at 20oC from their chemical (UNIFAC structure. The model is implemented in a computer program, named P_PREDICT, which has larger prediction power close to 10 Pa at 20oC than the other models tested. The main advantage of the model, however, is that no experimental data, which will introduce uncertainty in the predictions, is needed. Classification using P_PREDICT, which only predicts one value for a given UNIFAC structure, is proposed. Organic compounds, which can be described by the UNIFAC groups in the present version of P_PREDICT, therefore, can be classified unambiguously as either VOCs or non-VOCs. Most people, including the present authors, feel uneasy about prioritising precision above accuracy. Modelling vapour pressures, however, could save a lot of money and the errors introduced are not large enough to have any substantial adverse effects for neither human beings nor the environment. A method for calculating vapour pressures at other temperatures than 20oC is tested with a dubious result. This method is used for EU risk assessment of new and existing chemicals.

  14. CdTe thin film solar cells produced using a chamberless inline process via metalorganic chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kartopu, G., E-mail: giray.kartopu@glyndwr.ac.uk; Barrioz, V.; Monir, S.; Lamb, D.A.; Irvine, S.J.C.

    2015-03-02

    Cd{sub 1−x}Zn{sub x}S and CdTe:As thin films were deposited using a recently developed chamberless inline process via metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure and assessed for fabrication of CdTe photovoltaic (PV) solar cells. Initially, CdS and Cd{sub 1−x}Zn{sub x}S coatings were applied onto 15 × 15 cm{sup 2} float glass substrates, characterised for their optical properties, and then used as the window layer in CdTe solar cells which were completed in a conventional MOCVD (batch) reactor. Such devices provided best conversion efficiency of 13.6% for Cd{sub 0.36}Zn{sub 0.64}S and 10% for CdS which compare favourably to the existing baseline MOCVD (batch reactor) devices. Next, sequential deposition of Cd{sub 0.36}Zn{sub 0.64}S and CdTe:As films was realised by the chamberless inline process. The chemical composition of a 1 μm CdTe:As/150 nm Cd{sub 0.36}Zn{sub 0.64}S bi-layer was observed via secondary ions mass spectroscopy, which showed that the key elements are uniformly distributed and the As doping level is suitable for CdTe device applications. CdTe solar cells formed using this structure provided a best efficiency of 11.8% which is promising for a reduced absorber thickness of 1.25 μm. The chamberless inline process is non-vacuum, flexible to implement and inherits from the legacy of MOCVD towards doping/alloying and low temperature operation. Thus, MOCVD enabled by the chamberless inline process is shown to be an attractive route for thin film PV applications. - Highlights: • CdS, CdZnS and CdTe thin films grown by a chamberless inline process • The inline films assessed for fabricating CdTe solar cells • 13.6% conversion efficiency obtained for CdZnS/CdTe cells.

  15. Characteristics of carbon coatings on optical fibers prepared by radio-frequency plasma enhanced chemical vapor deposition with different H{sub 2}/C{sub 2}H{sub 2} ratios

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Hung-Chien; Yu, Jen-Feng [Department of Materials Science and Engineering, National Chung Hsing University 250 Kuo Kuang Road, Taichung 402, Taiwan (China); Shiue, Sham-Tsong, E-mail: stshiue@dragon.nchu.edu.t [Department of Materials Science and Engineering, National Chung Hsing University 250 Kuo Kuang Road, Taichung 402, Taiwan (China); Lin, Hung-Yi [Mechanical and Systems Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan (China)

    2010-10-01

    Characteristics of carbon coatings on optical fibers prepared by radio-frequency plasma enhanced chemical vapor deposition with different H{sub 2}/C{sub 2}H{sub 2} ratios are investigated. Five kinds of carbon coatings are prepared with H{sub 2}/C{sub 2}H{sub 2} ratios of 2, 4, 6, 8, and 10. Experimental results show that the deposition rate and surface roughness of carbon coatings decrease as the H{sub 2}/C{sub 2}H{sub 2} ratio increases. When the H{sub 2}/C{sub 2}H{sub 2} ratio changes from 2 to 8, the increase of H{sub 2}/C{sub 2}H{sub 2} ratios detrimentally yields sp{sup 3} carbon atoms and sp{sup 3}-CH{sub 3} bonds in the carbon coatings. However, when the H{sub 2}/C{sub 2}H{sub 2} ratio exceeds 8, the hydrogen retards the growth of the graphite structure. Moreover, the redundant hydrogen radicals favor bonding with the dangling bonds in the coating surface. Therefore, when the H{sub 2}/C{sub 2}H{sub 2} ratio increases from 8 to 10, the amounts of sp{sup 3} carbon atoms and sp{sup 3}-CH{sub 3} bonds in the carbon coatings increase. At an H{sub 2}/C{sub 2}H{sub 2} ratio of 8, the carbon coating exhibits excellent water-repellency and thermal-loading resistance, and so this ratio is the best for producing a hermetically sealed optical fiber coating.

  16. Effect of surfactants on the morphology of FeSe films fabricated from a single source precursor by aerosol assisted chemical vapour deposition

    Indian Academy of Sciences (India)

    Raja Azadar Hussain; Amin Badshah; Naghma Haider; Malik Dilshad Khan; Bhajan Lal

    2015-03-01

    This article presents the fabrication of FeSe thin films from a single source precursor namely (1-(2-fluorobenzoyl)-3-(4-ferrocenyl-3-methylphenyl)selenourea (MeP2F)) by aerosol assisted chemical vapour deposition (AACVD). All the films were prepared via similar experimental conditions (temperature, flow rate, concentration, solvent system and reactor type) except the use of three different concentrations of two different surfactants i.e., triton and span. Seven thin films were characterized with PXRD, SEM, AFM, EDS and EDS mapping. The mechanism of the interaction of surfactant with MeP2F was determined with cyclic voltammetry (CV) and UV-Vis spectroscopy.

  17. Synthesis of nanocrystalline silicon thin films using the increase of the deposition pressure in the hot-wire chemical vapour deposition technique

    Directory of Open Access Journals (Sweden)

    J.K. Rath

    2010-01-01

    Full Text Available Nanostructured thin silicon-based films have been deposited using the hot-wire chemical vapour deposition (HWCVD technique at the University of the Western Cape. A variety of techniques including optical and infrared spectroscopy, Raman scattering spectroscopy, X-rays diffraction (XRD and transmission electron microscopy (TEM have been used for characterisation of the films. The electrical measurements show that the films have good values of photoresponse, and the photocurrent remains stable after several hours of light soaking. This contribution will discuss the characteristics of the hydrogenated nanocrystalline silicon thin films deposited using increased process chamber pressure at a fixed hydrogen dilution ratio in monosilane gas.

  18. Polycyclic organic material (POM) in urban air. Fractionation, chemical analysis and genotoxicity of particulate and vapour phases in an industrial town in Finland

    Science.gov (United States)

    Pyysalo, Heikki; Tuominen, Jari; Wickström, Kim; Skyttä, Eija; Tikkanen, Leena; Salomaa, Sisko; Sorsa, Marja; Nurmela, Tuomo; Mattila, Tiina; Pohjola, Veijo

    Polycyclic organic material (POM) was collected by high-volume sampling on filter and on XAD-2 resin from the air of a small industrial town in Finland. Concurrent chemical analysis and the assays for genotoxic activity were performed on the particulate and the vapour phases of ambient air POM and their chemical fractions. Furthermore, correlations between seasonal meteorological parameters and POM concentrations were studied to reveal characteristic POM profiles for various emission sources. The range of total POM concentrations varied from 115 to 380 ng m -3 in late spring and from 17 to 83 ng m -3 in early winter. No direct correlation of ambient POM was seen with the temperature, but rather with the wind direction from various emission sources. Especially the low molecular weight compounds were associated with wind direction from industrial sources. Genotoxic activity, as detected by the Ames Salmonella/microsome test and the SCE assay in CHO cells, was found not only in the paniculate phase samples but also in the vapour phase. The polar fractions of some of the samples showed genotoxic activity, and also direct mutagenicity was observed with both the assay systems; these facts support the significance of compounds other than conventional polycyclic aromatic hydrocarbons (PAH) in the samples.

  19. On titanium dioxide thin films growth from the direct current electric field assisted chemical vapour deposition of titanium (IV) chloride in toluene

    Energy Technology Data Exchange (ETDEWEB)

    Romero, L. [School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom); Jorge-Sobrido, A.-B.; McMillian, P.F. [Christopher Ingold Building (Chemistry), University College of London, 20 Gordon street, London WC1H 0AJ (United Kingdom); Binions, R. [School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom)

    2015-06-01

    Titanium dioxide thin films were deposited from the aerosol assisted chemical vapour deposition reaction of titanium tetrachloride in toluene (1 M) at 600 °C and 5 L min{sup −1}. Direct current electric fields were applied and increased in a range of 0 to 30 V during the reaction. Changes in particle size, agglomeration and particle shape were observed. Raman spectroscopy analysis revealed different composition of anatase and rutile and crystal phase depending on the field strength applied. The photocatalytic activity was calculated from the half-life or time needed by the films to degrade 50% Resazurin dye-ink initial concentration. High photocatalytic performance with high anatase content (98.3%) was observed with half-life values of 3.9 min. Deposited films with pure content in rutile showed better photocatalytic performance than films with mix of crystal phases with anatase content below 40%. - Highlights: • Electric field assisted chemical vapour deposition used to synthesis titania thin films. • Significant alterations to crystallographic orientation and microstructure observed • Order of magnitude reduction in half life of dye degradation obtainable.

  20. Room-Temperature Ferromagnetism of Ga1-xMnxN Grown by Low-Pressure Metalorganic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    CHEN Zhi-Tao; ZHANG Guo-Yi; SU Yue-Yong; YANG Zhi-Jian; ZHANG Yan; ZHANG Bin; GUO Li-Ping; XU Ke; PAN Yao-Bao; ZHANG Han

    2006-01-01

    @@ Epitaxial films of Ga1-xMnxN have been grown on c-sapphire substrates by low-pressure metal-organic vapour phase epitaxy. The samples show ferromagnetic behaviour up to a temperature of T = 380 K with hysteresis curves showing a coercivity of 50-100Oe. No ferromagnetic second phases and no significant deterioration in crystal quality with the incorporation of Mn can be detected by high-resolution x-ray diffraction. The result of x-ray absorption near-edge structures indicates that Mn atoms substitute for Ga atoms. The Mn concentrations of the layers are determined to reach x = 0.038 by proton-induced x-ray emission.

  1. Investigation of chemical vapour deposition diamond detectors by X- ray micro-beam induced current and X-ray micro-beam induced luminescence techniques

    CERN Document Server

    Olivero, P; Vittone, E; Fizzotti, F; Paolini, C; Lo Giudice, A; Barrett, R; Tucoulou, R

    2004-01-01

    Tracking detectors have become an important ingredient in high-energy physics experiments. In order to survive the harsh detection environment of the Large Hadron Collider (LHC), trackers need to have special properties. They must be radiation hard, provide fast collection of charge, be as thin as possible and remove heat from readout electronics. The unique properties of diamond allow it to fulfill these requirements. In this work we present an investigation of the charge transport and luminescence properties of "detector grade" artificial chemical vapour deposition (CVD) diamond devices developed within the CERN RD42 collaboration, performed by means of X-ray micro-beam induced current collection (XBICC) and X-ray micro- beam induced luminescence (XBIL) techniques. XBICC technique allows quantitative estimates of the transport parameters of the material to be evaluated and mapped with micrometric spatial resolution. In particular, the high resolution and sensitivity of the technique has allowed a quantitati...

  2. Formation of silicon nanoislands on crystalline silicon substrates by thermal annealing of silicon rich oxide deposited by low pressure chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yu Zhenrui [Department of Electronics, INAOE, Apartado 51, Puebla, Puebla 72000 (Mexico); Aceves-Mijares, Mariano [Department of Electronics, INAOE, Apartado 51, Puebla, Puebla 72000 (Mexico); Luna-Lopez, A [Department of Electronics, INAOE, Apartado 51, Puebla, Puebla 72000 (Mexico); Du Jinhui [College of Material Science and Chemistry Engineering, Tianjin Polytechnical University (China); Bian Dongcai [College of Material Science and Chemistry Engineering, Tianjin Polytechnical University (China)

    2006-10-14

    We report the preparation and characterization of Si nanoislands grown on a c-Si substrate by thermal annealing of silicon-rich oxide (SRO) films deposited using a conventional low pressure chemical vapour deposition (LPCVD) technique. Transmission electron microscopy revealed that a high density of Si nanoislands was formed on the surface of the c-Si substrate during thermal annealing. The nanoislands are nanocrystallites with the same crystal orientation as the substrate. The strain at the c-Si/SRO interface is probably the main reason for the nucleation of the self-assembled Si nanoislands that epitaxially grow on the c-Si substrate. The proposed method is very simple and compatible with Si integrated circuit technology.

  3. Atomic-Scale Kinetic Monte Carlo Simulation of {100}-Oriented Diamond Film Growth in C-H and C-H-Cl Systems by Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    安希忠; 张禹; 刘国权; 秦湘阁; 王辅忠; 刘胜新

    2002-01-01

    We simulate the { 100}-oriented diamond film growth of chemical vapour deposition (CVD) under different modelsin C-H and C-H-CI systems in an atomic scale by using the revised kinetic Monte Carlo method. The sirnulationresults show that: (1) the CVD diamond flm growth in the C-H system is suitable for high substrate temperature,and the flm surface roughness is very coarse; (2) the CVD diamond film can grow in the C-H-C1 system eitherat high temperature or at low temperature, and the film quality is outstanding; (3) atomic CI takes ala activerole for the growth of diamond film, especially at low temperatures. The concentration of atomic C1 should becontrolled in a proper range.

  4. Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Lin Zhi-Yu; Hao Yue; Zhang Jin-Cheng; Zhou Hao; Li Xiao-Gang; Meng Fan-Na; Zhang Lin-Xia; Ai Shan; Xu Sheng-Rui; Zhao Yi

    2012-01-01

    In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with double AlN buffer layers.The buffer layer consists of a low-temperature (LT) AlN layer and a high-temperature (HT) AlN layer that are grown at 600 ℃ and 1000 ℃,respectively.It is observed that the thickness of the LT-AlN layer drastically influences the quality of GaN thin film,and that the optimized 4.25-min-LT-AlN layer minimizes the dislocation density of GaN thin film.The reason for the improved properties is discussed in this paper.

  5. Preparation of high-quality hydrogenated amorphous silicon film with a new microwave electron cyclotron resonance chemical vapour deposition system assisted with hot wire

    Institute of Scientific and Technical Information of China (English)

    Zhu Xiu-Hong; Chen Guang-Hua; Yin Sheng-Yi; Rong Yan-Dong; Zhang Wen-Li; Hu Yue-Hui

    2005-01-01

    The preparation of high-quality hydrogenated amorphous silicon (a-Si:H) film with a new microwave electron cyclotron resonance-chemical vapour deposition (MWECR-CVD) system assisted with hot wire is presented. In this system the hot wire plays an important role in perfecting the microstructure as well as improving the stability and the optoelectronic properties of the a-Si:H film. The experimental results indicate that in the microstructure of the a-Si:H film, the concentration of dihydride is decreased and a trace of microcrystalline occurs, which is useful to improve its stability, and that in the optoelectronic properties of the a-Si:H film, the deposition rate reaches above 2.0nm/s and the photosensitivity increases up to 4.71× 105.

  6. The use of calcination in exposing the entrapped Fe particles from multi-walled carbon nanotubes grown by chemical vapour deposition

    Science.gov (United States)

    Pillai, Sreejarani K.; Matlhoko, Letlhogonolo; Arendse, Chris; Sinha Ray, Suprakas; Moodley, Mathew

    2009-03-01

    Multi-walled carbon nanotubes (MWCNTs) were synthesized a by chemical vapour deposition method. The effect of calcination at temperatures ranging from 300 to 550°C in exposing the metal nanoparticles within the nanotube bundles was studied. The degree of degradation of the structural integrity of the MWCNTs during the thermal process was studied by Raman spectroscopy, X-ray diffraction analysis, field-emission scanning electron microscopy, and transmission electron microscopy. The thermal behaviour of the as-prepared and calcined samples was investigated by thermogravimetric analysis. Calcination in air, at 400°C for 1 h, was found to be an efficient and simple method to extract metallic impurities from the amorphous carbon shells with minimal damage to the tube walls and lengths. The nanotubes were observed to be damaged at temperatures higher than 450°C.

  7. Gas phase optical emission spectroscopy during remote plasma chemical vapour deposition of GaN and relation to the growth dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Corr, Cormac; Boswell, Rod [Space Plasma, Power and Propulsion Group, Plasma Research Laboratory, Research School of Physics and Engineering, Australian National University, Canberra 0200 (Australia); Carman, Robert [Physics Department, Macquarie University, North Ryde, Sydney, NSW 2109 (Australia)

    2011-02-02

    A remote plasma chemical vapour deposition (RPCVD) system for the growth of gallium nitride (GaN) thin films is investigated using optical emission spectroscopy (OES). The intensities of the various excited species in pure nitrogen as well as nitrogen/hydrogen plasmas are correlated with GaN film growth characteristics. We show a correlation between the plasma source spectrum, the downstream spectrum where trimethylgallium is introduced and the GaN film quality. In particular, we investigate the addition of hydrogen, which greatly affects the gas phase species and the GaN film characteristics. OES is demonstrated to be a valuable monitoring tool in a RPCVD system for optimization of GaN growth.

  8. Growth of MgB2 Thin Films by Chemical Vapour Deposition Using B2H6 as a boron Source

    Institute of Scientific and Technical Information of China (English)

    王淑芳; 朱亚彬; 刘震; 周岳亮; 张芹; 陈正豪; 吕惠宾; 杨国桢

    2003-01-01

    Superconducting MgB2 thin films were grown on single crystal Al2O3 (0001) by chemical vapour deposition using B2H6 as a boron source. MgB2 film was then accomplished by annealing the boron precursor films in the presence of high-purity magnesium bulk at 890℃ in vacuum. The as-grown MgB2 films are smooth and c-axis-oriented.The films exhibit a zero-resistance transition of about 38K with a narrow transition width of 0.2 K. Magnetic hysteresis measurements yield the critical current density of 1.9 × 107 A/cm2 at 10 K in zero field.

  9. Growth of (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} thin films by metal-organic chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Aboulfarah, B.; Mzerd, A. [Univ. MedV Agdal, Rabat (Morocco). Dept. de Physique; Giani, A.; Boulouz, A.; Pascal-Delannoy, F.; Foucaran, A.; Boyer, A. [Centre d' Electronique et de Micro-Optoelectronique de Montpellier (CEM 2), UM II UMR 5507 CNRS, Place E. Bataillon, 34095, Montpellier (France)

    2000-01-29

    The effects of VI/V ratio on electrical and thermoelectrical properties of p-type (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} elaborated by metal-organic chemical vapour deposition (MOCVD) in horizontal quartz reactor are discussed. The deposited layers exhibit a polycrystalline structure and an improvement in the intensity is observed with increasing the VI/V ratio. The quality of the layers is measured by means of the Energy dispersive X-ray (EDX) microanalyser and scanning electron microscopy (SEM). It is observed that the layers are stoichiometric when the VI/V ratio exceeds 3 and the surface texture is improved with increasing this ratio. The electrical properties of the thin films dependent on the VI/V ratio. The measurements of the Seebeck coefficient suggest a significant potential of MOCVD growth for large-scale production of thermoelectric materials. (orig.)

  10. Determination and characterization of phytochelatins by liquid chromatography coupled with on line chemical vapour generation and atomic fluorescence spectrometric detection.

    Science.gov (United States)

    Bramanti, Emilia; Toncelli, Daniel; Morelli, Elisabetta; Lampugnani, Leonardo; Zamboni, Roberto; Miller, Keith E; Zemetra, Joseph; D'Ulivo, Alessandro

    2006-11-10

    Liquid chromatography (LC) coupled on line with UV/visible diode array detector (DAD) and cold vapour generation atomic fluorescence spectrometry (CVGAFS) has been developed for the speciation, determination and characterization of phytochelatins (PCs). The method is based on a bidimensional approach, e.g. on the analysis of synthetic PC solutions (apo-PCs and Cd(2+)-complexed PCs) (i) by size exclusion chromatography coupled to UV diode array detector (SEC-DAD); (ii) by the derivatization of PC -SH groups in SEC fractions by p-hydroxymercurybenzoate (PHMB) and the indirect detection of PC-PHMB complexes by reversed phase liquid chromatography coupled to atomic fluorescence detector (RPLC-CVGAFS). MALDI-TOF/MS (matrix assisted laser desorption ionization time of flight mass spectrometry) analysis of underivatized synthetic PC samples was performed in order have a qualitative information of their composition. Quantitative analysis of synthetic PC solutions has been performed on the basis of peak area of PC-PHMB complexes of the mercury specific chromatogram and calibration curve of standard solution of glutathione (GSH) complexed to PHMB (GS-PHMB). The limit of quantitation (LOQ) in terms of GS-PHMB complex was 90 nM (CV 5%) with an injection volume of 35 microL, corresponding to 3.2 pmol (0.97 ng) of GSH. The method has been applied to analysis of extracts of cell cultures from Phaeodactylum tricornutum grown in Cd-containing nutrient solutions, analysed by SEC-DAD-CVGAFS and RPLC-DAD-CVGAFS.

  11. Plasma-enhanced Deposition of Nano-Structured Carbon Films

    Institute of Scientific and Technical Information of China (English)

    Yang Qiaoqin (杨巧勤); Xiao Chijin (肖持进); A. Hirose

    2005-01-01

    By pre-treating substrate with different methods and patterning the catalyst, selective and patterned growth of diamond and graphitic nano-structured carbon films have been realized through DC Plasma-Enhanced Hot Filament Chemical Vapor Deposition (PE-HFCVD).Through two-step processing in an HFCVD reactor, novel nano-structured composite diamond films containing a nanocrystalline diamond layer on the top of a nanocone diamond layer have been synthesized. Well-aligned carbon nanotubes, diamond and graphitic carbon nanocones with controllable alignment orientations have been synthesized by using PE-HFCVD. The orientation of the nanostructures can be controlled by adjusting the working pressure. In a Microwave Plasma Enhanced Chemical Vapor Deposition (MW-PECVD) reactor, high-quality diamond films have been synthesized at low temperatures (310 ℃~550 ℃) without adding oxygen or halogen gas in a newly developed processing technique. In this process, carbon source originates from graphite etching, instead of hydrocarbon. The lowest growth temperature for the growth of nanocrystalline diamond films with a reasonable growth rate without addition of oxygen or halogen is 260 ℃.

  12. Growth and characterization of nanodiamond layers prepared using the plasma-enhanced linear antennas microwave CVD system

    Energy Technology Data Exchange (ETDEWEB)

    Fendrych, Frantisek; Taylor, Andrew; Peksa, Ladislav; Kratochvilova, Irena; Kluiber, Zdenek; Fekete, Ladislav [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i, Na Slovance 2, CZ-18221 Prague 8 (Czech Republic); Vlcek, Jan [Department of Physics and Measurement, Institute of Chemical Technology Prague, Technicka 5, CZ-16628 Prague 6 (Czech Republic); Rezacova, Vladimira; Petrak, Vaclav [Faculty of Biomedical Engineering, Czech Technical University, Sitna 3105, CZ-27201 Kladno 2 (Czech Republic); Liehr, Michael [Leybold Optics Dresden GmbH, Zur Wetterwarte 50, D-01109 Dresden (Germany); Nesladek, Milos, E-mail: fendrych@fzu.c [IMOMEC division, IMEC, Institute for Materials Research, University Hasselt, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)

    2010-09-22

    Industrial applications of plasma-enhanced chemical vapour deposition (CVD) diamond grown on large area substrates, 3D shapes, at low substrate temperatures and on standard engineering substrate materials require novel plasma concepts. Based on the pioneering work of the group at AIST in Japan, the high-density coaxial delivery type of plasmas has been explored (Tsugawa et al 2006 New Diamond Front. Carbon Technol. 16 337-46). However, an important challenge is to obtain commercially interesting growth rates at very low substrate temperatures. In this work we introduce the concept of novel linear antenna sources, designed at Leybold Optics Dresden, using high-frequency pulsed MW discharge with a high plasma density. This type of pulse discharges leads to the preparation of nanocrystalline diamond (NCD) thin films, compared with ultra-NCD thin films prepared in (Tsugawa et al 2006 New Diamond Front. Carbon Technol. 16 337-46). We present optical emission spectroscopy data for the CH{sub 4}-CO{sub 2}-H{sub 2} gas chemistry and we discuss the basic properties of the NCD films grown.

  13. Effect of Hydrogen Dilution on Growth of Silicon Nanocrystals Embedded in Silicon Nitride Thin Film bv Plasma-Enhanced CVD

    Institute of Scientific and Technical Information of China (English)

    DING Wenge; ZHEN Lanfang; ZHANG Jiangyong; LI Yachao; YU Wei; FU Guangsheng

    2007-01-01

    An investigation was conducted into the effect of hydrogen dilution on the mi-crostructure and optical properties of silicon nanograins embedded in silicon nitride (Si/SiNx) thin film deposited by the helicon wave plasma-enhanced chemical vapour deposition technique. With Ar-diluted SiH4 and N2 as the reactant gas sources in the fabrication of thin film, the film was formed at a high deposition rate. There was a high density of defect at the amorphous silicon (a-Si)/SiNx interface and a relative low optical gap in the film. An addition of hydrogen into the reactant gas reduced the film deposition rate sharply. The silicon nanograins in the SiNx matrix were in a crystalline state, and the density of defects at the silicon nanocrystals (nc-Si)/SiNx interface decreased significantly and the optical gap of the films widened. These results suggested that hydrogen activated by the plasma could not only eliminate in the defects between the interface of silicon nanograins and SiNx matrix, but also helped the nanograins transform from the amorphous into crystalline state. By changing the hydrogen dilution ratio in the reactant gas sources, a tunable band gap from 1.87 eV to 3.32 eV was obtained in the Si/SiNx film.

  14. Evaluation of water vapour assimilation in the tropical upper troposphere and lower stratosphere by a chemical transport model

    Science.gov (United States)

    Payra, Swagata; Ricaud, Philippe; Abida, Rachid; El Amraoui, Laaziz; Attié, Jean-Luc; Rivière, Emmanuel; Carminati, Fabien; von Clarmann, Thomas

    2016-09-01

    The present analysis deals with one of the most debated aspects of the studies on the upper troposphere/lower stratosphere (UTLS), namely the budget of water vapour (H2O) at the tropical tropopause. Within the French project "Multiscale water budget in the upper troposphere and lower stratosphere in the TROpics" (TRO-pico), a global-scale analysis has been set up based on space-borne observations, models and assimilation techniques. The MOCAGE-VALENTINA assimilation tool has been used to assimilate the Aura Microwave Limb Sounder (MLS) version 3.3 H2O measurements within the 316-5 hPa range from August 2011 to March 2013 with an assimilation window of 1 h. Diagnostics based on observations minus analysis and forecast are developed to assess the quality of the assimilated H2O fields. Comparison with an independent source of H2O measurements in the UTLS based on the space-borne Michelson Interferometer for Passive Atmospheric Sounding (MIPAS) observations and with meteorological ARPEGE analyses is also shown. Sensitivity studies of the analysed fields have been performed by (1) considering periods when no MLS measurements are available and (2) using H2O data from another MLS version (4.2). The studies have been performed within three different spaces in time and space coincidences with MLS (hereafter referred to as MLS space) and MIPAS (MIPAS space) observations and with the model (model space) outputs and at three different levels: 121 hPa (upper troposphere), 100 hPa (tropopause) and 68 hPa (lower stratosphere) in January and February 2012. In the MLS space, the analyses behave consistently with the MLS observations from the upper troposphere to the lower stratosphere. In the model space, the analyses are wetter than the reference atmosphere as represented by ARPEGE and MLS in the upper troposphere (121 hPa) and around the tropopause (100 hPa), but are consistent with MLS and MIPAS in the lower stratosphere (68 hPa). In the MIPAS space, the sensitivity and the

  15. Substrate patterning with NiOx nanoparticles and hot-wire chemical vapour deposition of WO3x and carbon nanostructures

    Science.gov (United States)

    Houweling, Z. S.

    2011-10-01

    The first part of the thesis treats the formation of nickel catalyst nanoparticles. First, a patterning technique using colloids is employed to create ordered distributions of monodisperse nanoparticles. Second, nickel films are thermally dewetted, which produces mobile species that self-arrange in non-ordered distributions of polydisperse particles. Third, the mobility of the nickel species is successfully reduced by the addition of air during the dewetting and the use of a special anchoring layer. Thus, non-ordered distributions of self-arranged monodisperse nickel oxide nanoparticles (82±10 nm x 16±2 nm) are made. Studies on nickel thickness, dewetting time and dewetting temperature are conducted. With these particle templates, graphitic carbon nanotubes are synthesised using catalytic hot-wire chemical vapour deposition (HWCVD), demonstrating the high-temperature processability of the nanoparticles. The second part of this thesis treats the non-catalytic HWCVD of tungsten oxides (WO3-x). Resistively heated tungsten filaments exposed to an air flow at subatmospheric pressures, produce tungsten oxide vapour species, which are collected on substrates and are subsequently characterised. First, a complete study on the process conditions is conducted, whereby the effects of filament radiation, filament temperature, process gas pressure and substrate temperature, are investigated. The thus controlled growth of nanogranular smooth amorphous and crystalline WO3-x thin films is presented for the first time. Partially crystalline smooth hydrous WO3-x thin films consisting of 20 nm grains can be deposited at very high rates. The synthesis of ultrafine powders with particle sizes of about 7 nm and very high specific surface areas of 121.7±0.4 m2·g-1 at ultrahigh deposition rates of 36 µm·min-1, is presented. Using substrate heating to 600°C or more, while using air pressures of 3·10-5 mbar to 0.1 mbar, leads to pronounced crystal structures, from nanowires, to

  16. Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane

    Energy Technology Data Exchange (ETDEWEB)

    Weeks, Stephen, E-mail: Stephen.Weeks@intermolecular.com; Nowling, Greg; Fuchigami, Nobi; Bowes, Michael; Littau, Karl [Intermolecular, 3011 North 1st Street, San Jose, California 95134 (United States)

    2016-01-15

    Progress in transistor scaling has increased the demands on the material properties of silicon nitride (SiN{sub x}) thin films used in device fabrication and at the same time placed stringent restrictions on the deposition conditions employed. Recently, low temperature plasma enhanced atomic layer deposition has emerged as a viable technique for depositing these films with a thermal budget compatible with semiconductor processing at sub-32 nm technology nodes. For these depositions, it is desirable to use precursors that are free from carbon and halogens that can incorporate into the film. Beyond this, it is necessary to develop processing schemes that minimize the wet etch rate of the film as it will be subjected to wet chemical processing in subsequent fabrication steps. In this work, the authors introduce low temperature deposition of SiN{sub x} using neopentasilane [NPS, (SiH{sub 3}){sub 4}Si] in a plasma enhanced atomic layer deposition process with a direct N{sub 2} plasma. The growth with NPS is compared to a more common precursor, trisilylamine [TSA, (SiH{sub 3}){sub 3 }N] at identical process conditions. The wet etch rates of the films deposited with NPS are characterized at different plasma conditions and the impact of ion energy is discussed.

  17. Effects of Surface Modification of Nanodiamond Particles for Nucleation Enhancement during Its Film Growth by Microwave Plasma Jet Chemical Vapour Deposition Technique

    Directory of Open Access Journals (Sweden)

    Chii-Ruey Lin

    2014-01-01

    Full Text Available The seedings of the substrate with a suspension of nanodiamond particles (NDPs were widely used as nucleation seeds to enhance the growth of nanostructured diamond films. The formation of agglomerates in the suspension of NDPs, however, may have adverse impact on the initial growth period. Therefore, this paper was aimed at the surface modification of the NDPs to enhance the diamond nucleation for the growth of nanocrystalline diamond films which could be used in photovoltaic applications. Hydrogen plasma, thermal, and surfactant treatment techniques were employed to improve the dispersion characteristics of detonation nanodiamond particles in aqueous media. The seeding of silicon substrate was then carried out with an optimized spin-coating method. The results of both Fourier transform infrared spectroscopy and dynamic light scattering measurements demonstrated that plasma treated diamond nanoparticles possessed polar surface functional groups and attained high dispersion in methanol. The nanocrystalline diamond films deposited by microwave plasma jet chemical vapour deposition exhibited extremely fine grain and high smooth surfaces (~6.4 nm rms on the whole film. These results indeed open up a prospect of nanocrystalline diamond films in solar cell applications.

  18. Structural and optical investigation of nonpolar a-plane GaN grown by metal-organic chemical vapour deposition on r-plane sapphire by neutron irradiation

    Institute of Scientific and Technical Information of China (English)

    Xu Sheng-Rui; Zhang Jin-Feng; Gu Wen-Ping; Hao Yue; Zhang Jin-Cheng; Zhou Xiao-Wei; Lin Zhi-Yu; Mao Wei

    2012-01-01

    Nonpolar (11(2)0) a-plane GaN films are grown by metal-organic chemical vapour deposition (MOCVD) on r-plane (1(1)02) sapphire.The samples are irradiated with neutrons under a dose of 1 × 1015 cm-2.The surface morphology,the crystal defects and the optical properties of the samples before and after irradiation are analysed using atomic force microscopy (AFM),high resolution X-ray diffraction (HRXRD) and photoluminescence (PL).The AFM result shows deteriorated sample surface after the irradiation.Careful fitting of the XRD rocking curve is carried out to obtain the Lorentzian weight fraction.Broadening due to Lorentzian type is more obvious in the as-grown sample compared with that of the irradiated sample,indicating that more point defects appear in the irradiated sample.The variations of line width and intensity of the PL band edge emission peak are consistent with the XRD results.The activation energy decreases from 82.5 meV to 29.9 meV after irradiation by neutron.

  19. A Simple Route of Morphology Control and Structural and Optical Properties of ZnO Grown by Metal-Organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    FAN Hai-Bo; YANG Shao-Yan; ZHANG Pan-Feng; WEI Hong-Yuan; LIU Xiang-Lin; JIAO Chun-Mei; ZHU Qin-Sheng; CHEN Yong-Hai; WANG Zhan-Guo

    2008-01-01

    @@ Employing the metal-organic chemical vapour deposition (MOCVD) technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux (BDF) and the carrier gas flux of oxygen (OCGF). The scanning electron microscope images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction (XRD) and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 20 locations of ZnO (002) face in the XRD patterns and the E2 (high) locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopyresults show all the samples have a sharp ultraviolet luminescent band without any defects-related emission.Upon the experiments a possible growth mechanism is proposed.

  20. Surface engineering of artificial heart valve disks using nanostructured thin films deposited by chemical vapour deposition and sol-gel methods.

    Science.gov (United States)

    Jackson, M J; Robinson, G M; Ali, N; Kousar, Y; Mei, S; Gracio, J; Taylor, H; Ahmed, W

    2006-01-01

    Pyrolytic carbon (PyC) is widely used in manufacturing commercial artificial heart valve disks (HVD). Although PyC is commonly used in HVD, it is not the best material for this application since its blood compatibility is not ideal for prolonged clinical use. As a result thrombosis often occurs and the patients are required to take anti-coagulation drugs on a regular basis in order to minimize the formation of thrombosis. However, anti-coagulation therapy gives rise to some detrimental side effects in patients. Therefore, it is extremely urgent that newer and more technically advanced materials with better surface and bulk properties are developed. In this paper, we report the mechanical properties of PyC-HVD, i.e. strength, wear resistance and coefficient of friction. The strength of the material was assessed using Brinell indentation tests. Furthermore, wear resistance and coefficient of friction values were obtained from pin-on-disk testing. The micro-structural properties of PyC were characterized using XRD, Raman spectroscopy and SEM analysis. Also in this paper we report the preparation of freestanding nanocrystalline diamond films (FSND) using the time-modulated chemical vapour deposition (TMCVD) process. Furthermore, the sol-gel technique was used to uniformly coat PyC-HVD with dense, nanocrystalline-titanium oxide (nc-TiO2) coatings. The as-grown nc-TiO2 coatings were characterized for microstructure using SEM and XRD analysis.

  1. Growth and characterization of germanium epitaxial film on silicon (001 with germane precursor in metal organic chemical vapour deposition (MOCVD chamber

    Directory of Open Access Journals (Sweden)

    Kwang Hong Lee

    2013-09-01

    Full Text Available The quality of germanium (Ge epitaxial film grown directly on a silicon (Si (001 substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD system is studied. The growth sequence consists of several steps at low temperature (LT at 400 °C, intermediate temperature ramp (LT-HT of ∼10 °C/min and high temperature (HT at 600 °C. This is followed by post-growth annealing in hydrogen at temperature ranging from 650 to 825 °C. The Ge epitaxial film of thickness ∼ 1 μm experiences thermally induced tensile strain of 0.11 % with a treading dislocation density (TDD of ∼107/cm2 and the root-mean-square (RMS roughness of ∼ 0.75 nm. The benefit of growing Ge epitaxial film using MOCVD is that the subsequent III-V materials can be grown in-situ without the need of breaking the vacuum hence it is manufacturing worthy.

  2. Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications

    Indian Academy of Sciences (India)

    Bhubesh Chander Joshi; Manish Mathew; B C Joshi; D Kumar; C Dhanavantri

    2010-01-01

    GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers respectively. High resolution XRD (HRXRD) peaks show FWHM of 272 and 296 arcsec for the (0 0 0 2) plane of GaN and GaN in GaN/AlGaN respectively. For GaN buffer layer, the Hall mobility is 346 cm2/V-s and carrier concentration is 4.5 × 1016 /cm3. AFM studies on GaN buffer layer show a dislocation density of 2 × 108/cm2 by wet etching in hot phosphoric acid. The refractive indices of GaN buffer layer on sapphire at 633 nm are 2.3544 and 2.1515 for TE and TM modes respectively.

  3. In-situ Fourier transform infrared spectroscopy gas phase studies of vanadium (IV) oxide coating by atmospheric pressure chemical vapour deposition using vanadyl (IV) acetylacetonate

    Energy Technology Data Exchange (ETDEWEB)

    Vernardou, D. [Institute for Materials Research, University of Salford, Cockroft Building, Salford, Manchester, M5 4WT (United Kingdom); Pemble, M.E. [Tyndall National institute, Lee Maltings, Prospect Row, Cork (Ireland)], E-mail: martyn.pemble@tyndall.ie; Sheel, D.W. [Institute for Materials Research, University of Salford, Cockroft Building, Salford, Manchester, M5 4WT (United Kingdom)

    2008-05-30

    This paper describes the use of in-situ Fourier transform infrared spectroscopy to monitor the gas phase reactions of the formation of VO{sub 2} thin films from VO(acac){sub 2} under atmospheric pressure chemical vapour deposition conditions. In the absence of O{sub 2}, it is found that anhydride species may form, while there is also some evidence of ester species. In the presence of O{sub 2}, the spectra obtained are almost identical to those in the absence of O{sub 2}. However in this case, there is also some indication for the enhanced production of CO and the suppression of the formation of C-H species. A possible mechanism for the formation of VO{sub 2} is proposed, which involves the release of two C{sub 3}H{sub 4} molecules and the decomposition of vanadyl (IV) acetylacetonate into VO(CH{sub 3}COO){sub 2}, which then further decomposes to yield (CH{sub 3}CO){sub 2}O and VO{sub 2}. However, while spectroscopic evidence for the formation of these species is presented, the mechanism proposed cannot be confirmed on the basis of these data alone.

  4. Effect of Postdeposition Heat Treatment on the Crystallinity, Size, and Photocatalytic Activity of TiO2 Nanoparticles Produced via Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Siti Hajar Othman

    2010-01-01

    Full Text Available Titanium dioxide (TiO2 nanoparticles were produced using chemical vapour deposition (CVD at different deposition temperatures (300–700°C. All the samples were heat treated at their respective deposition temperatures and at a fixed temperature of 400°C. A scanning electron microscope (SEM, a transmission electron microscope (TEM, and X-ray diffraction (XRD were used to characterize the nanoparticles in terms of size and crystallinity. The photocatalytic activity was investigated via degradation of methylene blue under UV light. The effects of post deposition heat treatment are discussed in terms of crystallinity, nanoparticle size as well as photocatalytic activity. Crystallinity was found to have a much larger impact on photocatalytic activity compared to nanoparticle size. Samples having a higher degree of crystallinity were more photocatalytically active despite being relatively larger in size. Surprisingly, the photocatalytic activity of the samples reduced when heat treated at temperatures lower than the deposition temperature despite showing an improvement in crystallinity.

  5. Pengaruh Temperatur, Massa Zink, Substrat Dan Waktu Tahan Terhadap Struktur Dan Morfologi Zno Hasil Sintesis Dengan Metode Chemical Vapour Transport (CVT

    Directory of Open Access Journals (Sweden)

    Arisela Distyawan

    2013-09-01

    Full Text Available Normal 0 false false false MicrosoftInternetExplorer4 Material Zink Oksida (ZnO telah berhasil disintesis menggunakan metode Chemical Vapour Transport dengan bahan dasar prekursor berupa serbuk Zn yang dipanaskan hingga mencapai temperatur uap dalam furnace horisontal. Adapun variasi yang diberikan dalam penelitian adalah berupa temperatur pemanasan (850, 900, dan 950oC, massa prekursor Zn (0,15, 0,25, dan 0,35g, lama waktu sputtering substrat (90 dan 180 detik, dan waktu tahan khusus untuk mengetahui initial growth ZnO (10, 20, 30, 40, 50, dan 60 menit. Pembentukan Zink Oksida (ZnO dikonfirmasi melalui data X-RD, dimana telah terbentuk material ZnO dengan struktur hexagonal wurtzite. Berdarsarkan data XRD juga diketahui ukuran kristal pada sampel sputtering 90 detik mengalami penurunan bersamaan penambahan massa Zn. Dari hasil pengamatan SEM didapatkan bahwa morfologi permukaan lapisan tipis ZnO terdiri dari berbagai macam bentuk berupa nanoparticle, nanowires, nanorods, dan nanotetrapod. Lapisan Zno paling tebal sebesar ±350 nm pada sampel 950oC-0,15g sputter 90 detik. Semakin tinggi temperatur operasi berdampak peningkatan ukuran partikel. Pengujian FTIR turut menguatkan terbentuknya lapisan tipis di permukaan substrat Alumina. Hal ini didasarkan terjadinya penyerapan vibrasi yang membentuk lekukan pada kisaran area 509 cm-1 dari masing-masing sampel.

  6. High performance liquid chromatography coupled to atomic fluorescence spectrometry for the speciation of the hydride and chemical vapour-forming elements As, Se, Sb and Hg: A critical review

    Energy Technology Data Exchange (ETDEWEB)

    Chen Yuwei [Department of Chemistry and Biochemistry, Laurentian University, Ramsey Lake Road, Sudbury P3E 2C6 (Canada); Belzile, Nelson, E-mail: nbelzile@laurentian.ca [Department of Chemistry and Biochemistry, Laurentian University, Ramsey Lake Road, Sudbury P3E 2C6 (Canada); Cooperative Freshwater Ecology Unit, Laurentian University, Ramsey Lake Road, Sudbury P3E 2C6 (Canada)

    2010-06-25

    We present the most recent applications of high performance liquid chromatography (HPLC) hyphenated to hydride generation or chemical vapour generation and atomic fluorescence spectrometry (HG/CVG-AFS), for the determination and speciation of the selected hydride-forming elements arsenic (As), selenium (Se) and antimony (Sb) and the chemical vapour-forming metal Hg. The review focuses on sample preparation, post-column treatments and on the applications of this technique to various liquid and solid samples. This review also intends to discuss some limitations associated to HPLC-HG/CVG-AFS due to the necessity on post-column treatments, including the oxidation of organo-element compounds and the pre-reduction to a suitable valence. Nevertheless, the hyphenated technique HPLC-HG/CVG-AFS remains an efficient, sensitive and affordable approach to perform speciation of the four studied elements as shown by the variety of applications presented and discussed in this review.

  7. Raman Spectroscopic Study of Carbon Nanotubes Prepared Using Fe/ZnO-Palm Olein-Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Syazwan Afif Mohd Zobir

    2012-01-01

    Full Text Available Multiwalled carbon nanotubes (MWCNTs were synthesized using Fe/ZnO catalyst by a dual-furnace thermal chemical vapor deposition (CVD method at 800–1000°C using nitrogen gas with a constant flow rate of 150 sccm/min as a gas carrier. Palm olein (PO, ferrocene in the presence of 0.05 M zinc nitrate, and a p-type silicon wafer were used as carbon source, catalyst precursor, and sample target, respectively. D, G, and G′ bands were observed at 1336–1364, 1559–1680, and 2667–2682 cm-1, respectively. Carbon nanotubes (CNTs with the highest degree of crystallinity were obtained at around 8000°C, and the smallest diameter of about 2 nm was deposited on the silicon substrate at 1000°C.

  8. Plasma enhanced diamond deposition on steel and Si substrates

    Institute of Scientific and Technical Information of China (English)

    Y.S. Li; Y. Tang; W. Chen; Q. Yang; C. Xiao; A. Hirose

    2009-01-01

    Diamond growth on Fe-Cr-Al-Si steel and Si substrates was comparatively investigated in microwave plasma enhanced chemical vapor deposition (MPCVD) reactor with different deposition parameters. Adherent nanocrystalline diamond films were directly deposited on this steel substrate under a typical deposition condition, whereas microcrystalline diamond films were produced on Si wafer. With increasing CH4 concentration, reaction pressure, or the total gas flow rate, the quality of nanocrystalline diamond films formed on Fe-Cr-Al-Si substrates is gradually deteriorated in terms of density and adhesion. This impaired diamond quality on steels is primarily associated with a combined effect by the substrate composition and the specific process conditions that favor excessive nucleation of diamond.

  9. The Liquid Vapour Interface

    DEFF Research Database (Denmark)

    Als-Nielsen, Jens Aage

    1985-01-01

    In this short review we are concerned with the density variation across the liquid-vapour interface, i.e. from the bulk density of the liquid to the essentially zero density of the vapour phase. This density variation can in principle be determined from the deviation of the reflectivity from...

  10. Effect of reaction parameters on the growth of MWCNTs using mesoporous Sb/MCM-41 by chemical vapour deposition

    Science.gov (United States)

    Atchudan, R.; Pandurangan, A.; Subramanian, K.

    2011-11-01

    Mesoporous Si-MCM-41 molecular sieve was synthesized hydrothermally and different wt.% of Sb (1.0, 2.0, 3.0, 5.0, 10.0, 15.0 and 20.0) was loaded on it by wet impregnation method. The Sb/MCM-41 materials were characterized by various physico-chemical techniques such as XRD, TGA and TEM. The TEM image showed a honeycomb structure of the host material. They were used as catalytic templates for the growth of MWCNTs by CVD method with different temperatures at 700, 800, 900 and 1000 °C using acetylene as a carbon precursor. The reaction temperature was optimized for the better formation of MWCNTs and they were purified and then characterized by XRD, SEM, HR-TEM and Raman spectroscopy techniques. The formation of MWCNTs with diameter in the range of 4-6 nm was observed from HR-TEM. The good thermal stability and high productivity of catalyst observed in this study revealed that the 2 wt.% Sb loaded MCM-41 could be a promising support for the catalytic synthesis of MWCNTs at 800 °C by CVD method.

  11. Determination of the optical parameters of a-Si:H thin films deposited by hot wire–chemical vapour deposition technique using transmission spectrum only

    Indian Academy of Sciences (India)

    Nabeel A Bakr; A M Funde; V S Waman; M M Kamble; R R Hawaldar; D P Amalnerkar; S W Gosavi; S R Jadkar

    2011-03-01

    Three demonstration samples of intrinsic hydrogenated amorphous silicon (a-Si:H) films were deposited using hot wire–chemical vapour deposition (HW–CVD) technique. The optical parameters and the thickness were determined from the extremes of the interference fringes of transmission spectrum in the range of 400–2500 nm using the envelope method. The calculated values of the refractive index () were fitted using the two-term Cauchy dispersion relation and the static refractive index values (0) obtained were 2.799, 2.629 and 3.043 which were in the range of the reported values. The calculated thicknesses for all samples were cross-checked with Taly-Step profilometer and found to be almost equal. Detailed analysis was carried out to obtain the optical band gap (g) using Tauc’s method and the estimated values were 1.99, 2.01 and 1.75 eV. The optical band gap values were correlated with the hydrogen content (H) in the samples calculated from Fourier transform infrared (FTIR) analysis. An attempt was made to apply Wemple–DiDomenico single-effective oscillator model to the a-Si:H samples to calculate the optical parameters. The optical band gap obtained by Tauc’s method and the static refractive index calculated from Cauchy fitting are in good agreement with those obtained by the single-effective oscillator model. The real and the imaginary parts of dielectric constant (r, ), and the optical conductivity () were also calculated.

  12. A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Madito, M. J.; Bello, A.; Dangbegnon, J. K.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Manyala, N., E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARCHI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Oliphant, C. J.; Jordaan, W. A. [National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040 (South Africa); Fabiane, M. [Department of Physics, Institute of Applied Materials, SARCHI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Department of Physics, National University of Lesotho, P.O. Roma 180 (Lesotho)

    2016-01-07

    A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.

  13. Comparison of the Er,Cr:YSGG laser with a chemical vapour deposition bur and conventional techniques for cavity preparation: a microleakage study.

    Science.gov (United States)

    Yazici, A Rüya; Yıldırım, Zeren; Antonson, Sibel A; Kilinc, Evren; Koch, Daniele; Antonson, Donald E; Dayangaç, Berrin; Ozgünaltay, Gül

    2012-01-01

    The aim of this study was to compare the effects of the Er,Cr:YSGG laser using chemical vapour deposition (CVD) bur cavity preparation with conventional preparation methods including a diamond bur and a carbide bur on the microleakage with two different adhesive systems. A total of 40 extracted human premolars were randomly assigned to four experimental groups according to the cavity preparation technique: group I diamond bur (Diatech); group II carbide bur (Diatech); group III Er,Cr:YSGG laser (Biolase Millennium II); and group IV CVD bur (CVDentUS). Using the different preparation techniques, Class V standardized preparations were performed on the buccal and lingual surfaces with gingival margins on the dentin and occlusal margins on the enamel. Each preparation group was randomly assigned to two subgroups (five teeth, ten preparations) according to the type of adhesive: an etch-and-rinse adhesive (Adper Single Bond), and a single-step self-etch adhesive (AdheSE One). All preparations were restored with a nanohybrid composite resin in a single increment. Following thermocycling (×500; 5-55°C), the teeth were immersed in basic fuchsin and sectioned in the orovestibular direction. Dye penetration was evaluated under a light microscope by two blinded examiners. Data were statistically analysed with the Kruskal-Wallis and Wilcoxon tests (p0.05). Comparing the enamel and dentin leakage scores within each group, no statistically significant differences were found (p>0.05). The Er,Cr:YSGG laser cavity preparation did not differ from preparation with CVD, diamond or carbide bur in terms of microleakage with the different adhesive systems.

  14. Hydrogen production by ethanol partial oxidation over nano-iron oxide catalysts produced by chemical vapour synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Wael Ahmed Abou Taleb Sayed

    2011-01-13

    This work presents the experimental results of the synthesis of unsupported and supported SiC iron oxide nanoparticles and their catalytic activity towards ethanol partial oxidation. For comparison, further unsupported iron oxide phases were investigated towards the ethanol partial oxidation. These {gamma}-Fe{sub 2}O{sub 3} and {alpha}/{gamma}-Fe{sub 2}O{sub 3} phase catalysts were prepared by the CVS method using Fe(CO){sub 5} as precursor, supplied by another author. The {alpha}-Fe{sub 2}O{sub 3} and SiC nanoparticles were prepared by the CVS method using a home made hot wall reactor technique at atmospheric pressure. Ferrocene and tetramethylsilane were used as precursor for the production process. Process parameters of precursor evaporation temperature, precursor concentration, gas mixture velocity and gas mixture dilution were investigated and optimised to produce particle sizes in a range of 10 nm. For Fe{sub 2}O{sub 3}/SiC catalyst series production, a new hot wall reactor setup was used. The particles were produced by simultaneous thermal decomposition of ferrocene and tetramethylsilane in one reactor from both sides. The production parameters of inlet tube distance inside the reactor, precursor evaporation temperature and carrier gas flow were investigated to produce a series of samples with different iron oxide content. The prepared catalysts composition, physical and chemical properties were characterized by XRD, EDX, SEM, BET surface area, FTIR, XPS and dynamic light scattering (DLS) techniques. The catalytic activity for the ethanol gas-phase oxidation was investigated in a temperature range from 260 C to 290 C. The product distributions obtained over all catalysts were analysed with mass spectrometry analysis tool. The activity of bulk Fe{sub 2}O{sub 3} and SiC nanoparticles was compared with prepared nano-iron oxide phase catalysts. The reaction parameters, such as reaction temperature and O{sub 2}/ethanol ratio were investigated. The catalysts

  15. Surface morphological and photoelectrochemical studies of ZnS thin films developed from single source precursors by aerosol assisted chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ehsan, Muhammad Ali [Faculty of Science, Department of Chemistry, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Peiris, T.A. Nirmal; Wijayantha, K.G. Upul [Department of Chemistry, Loughborough University, Loughborough, LE11 3TU (United Kingdom); Khaledi, Hamid [Faculty of Science, Department of Chemistry, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Ming, Huang Nay [Faculty of Science, Department of Physics, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Misran, Misni; Arifin, Zainudin [Faculty of Science, Department of Chemistry, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia); Mazhar, Muhammad, E-mail: mazhar42pk@yahoo.com [Faculty of Science, Department of Chemistry, University of Malaya, Lembah Pantai, 50603 Kuala Lumpur (Malaysia)

    2013-07-01

    Zinc sulphide (ZnS) thin films have been deposited on fluorine-doped tin oxide-coated conducting glass substrates at 375, 425 and 475 °C temperatures from single source adduct precursors [Zn(S{sub 2}CNCy{sub 2}){sub 2}(py)] (1) [where, Cy = cyclohexyl, py = pyridine] and [Zn{S_2CN(CH_2Ph)(Me)}{sub 2}(py)] (2) [where, Ph = Phenyl, Me = Methyl] using aerosol assisted chemical vapour deposition (AACVD). The precursor complexes have been characterized by microanalysis, infrared spectroscopy, proton nuclear magnetic resonance spectroscopy, X-ray single crystal and thermogravimetric analysis. Thermal analysis showed that both precursors (1) and (2) undergo thermal decomposition at 375 °C to produce ZnS residues. The deposited ZnS films have been characterized by X-ray diffraction and energy dispersive X-ray spectroscopy. Scanning electron microscopic studies indicated that the surface morphology of ZnS films strongly depends on the nature of the precursor and the deposition temperature, regardless of marginal variation in thermal stability of the precursors. Direct band gap energies of 3.36 and 3.40 eV have been estimated from the ultraviolet–visible spectroscopy for the ZnS films fabricated from precursors (1) and (2), respectively. The current–voltage characteristics recorded under air mass 1.5 illumination confirmed that the deposited ZnS thin films are photoactive under anodic bias conditions. Furthermore, the photoelectrochemical (PEC) results indicate that these synthesised single source precursors are suitable for obtaining ZnS thin films by AACVD method. The ZnS thin film electrode prepared in this study are very promising for solar energy conversion and optoelectronic applications. The PEC properties of ZnS electrodes prepared from (2) are superior to that of the ZnS electrode prepared from precursor (1). - Highlights: • Synthesis and characterization of zinc dithiocarbamate pyridine adducts. • ZnS photo electrodes have been fabricated using aerosol

  16. TPR system: a powerful technique to monitor carbon nanotube formation during chemical vapour deposition; Sistema RTP: uma tecnica poderosa para o monitoramento da formacao de nanotubos de carbono durante o processo por deposicao de vapor quimico

    Energy Technology Data Exchange (ETDEWEB)

    Tristao, Juliana Cristina; Moura, Flavia Cristina Camilo; Lago, Rochel Montero, E-mail: rochel@ufmg.b [Universidade Federal de Minas Gerais (DQ/UFMG), Belo Horizonte, MG (Brazil). Dept. de Quimica; Sapag, Karim [Universidade Nacional de San Luis (Argentina). Lab. de Ciencias de Superficies y Medios Porosos

    2010-07-01

    In this work, a TPR (Temperature Programmed Reduction) system is used as a powerful tool to monitor carbon nanotubes production during CVD (Chemical Vapour Deposition), The experiments were carried out using catalyst precursors based on Fe-Mo supported on Al{sub 2}O{sub 3} and methane as carbon source. As methane reacts on the Fe metal surface, carbon is deposited and H2 is produced. TPR is very sensitive to the presence of H2 and affords information on the temperature where catalyst is active to form different forms of carbon, the reaction kinetics, the catalyst deactivation and carbon yields. (author)

  17. Virucidal efficacy of hydrogen peroxide vapour disinfection

    NARCIS (Netherlands)

    Tuladhar, E.; Terpstra, P.; Koopmans, M.; Duizer, E.

    2012-01-01

    Background: Viral contamination of surfaces is thought to be important in transmission. Chemical disinfection can be an effective means of intervention, but little is known about the virucidal efficacy of hydrogen peroxide vapour (HPV) against enteric and respiratory viruses. Aim: To measure the

  18. Virucidal efficacy of hydrogen peroxide vapour disinfection

    NARCIS (Netherlands)

    Tuladhar, E.; Terpstra, P.; Koopmans, M.; Duizer, E.

    2012-01-01

    Background: Viral contamination of surfaces is thought to be important in transmission. Chemical disinfection can be an effective means of intervention, but little is known about the virucidal efficacy of hydrogen peroxide vapour (HPV) against enteric and respiratory viruses. Aim: To measure the vir

  19. Amorphous indium-gallium-zinc-oxide thin-film transistors using organic-inorganic hybrid films deposited by low-temperature plasma-enhanced chemical vapor deposition for all dielectric layers

    Science.gov (United States)

    Hsu, Chao-Jui; Chang, Ching-Hsiang; Chang, Kuei-Ming; Wu, Chung-Chih

    2017-01-01

    We investigated the deposition of high-performance organic-inorganic hybrid dielectric films by low-temperature (close to room temperature) inductively coupled plasma chemical vapor deposition (ICP-CVD) with hexamethyldisiloxane (HMDSO)/O2 precursor gas. The hybrid films exhibited low leakage currents and high breakdown fields, suitable for thin-film transistor (TFT) applications. They were successfully integrated into the gate insulator, the etch-stop layer, and the passivation layer for bottom-gate staggered amorphous In-Ga-Zn-O (a-IGZO) TFTs having the etch-stop configuration. With the double-active-layer configuration having a buffer a-IGZO back-channel layer grown in oxygen-rich atmosphere for better immunity against plasma damage, the etch-stop-type bottom-gate staggered a-IGZO TFTs with good TFT characteristics were successfully demonstrated. The TFTs showed good field-effect mobility (μFE), threshold voltage (V th), subthreshold swing (SS), and on/off ratio (I on/off) of 7.5 cm2 V-1 s-1, 2.38 V, 0.38 V/decade, and 2.2 × 108, respectively, manifesting their usefulness for a-IGZO TFTs.

  20. A liquid crystalline chirality balance for vapours

    Science.gov (United States)

    Ohzono, Takuya; Yamamoto, Takahiro; Fukuda, Jun-Ichi

    2014-04-01

    Chiral discrimination of vapours plays an important role in olfactory perception of biological systems and its realization by artificial sensors has been an intriguing challenge. Here, we report a simple method that tangibly visualizes the chirality of a diverse variety of molecules dissolved from vapours with high sensitivity, by making use of a structural change in a periodic microstructure of a nematic liquid crystal confined in open microchannels. This microstructure is accompanied by a topological line defect of a zigzag form with equal lengths of ‘zig’ and ‘zag.’ We find that a tiny amount of vapour of chiral molecules injected onto the liquid crystal induces the imbalance of ‘zig’ and ‘zag’ depending on its enantiomeric excess within a few seconds. Our liquid-crystal-based ‘chirality balance’ offers a simple, quick and versatile chirality-sensing/-screening method for gas-phase analysis (for example, for odours, environmental chemicals or drugs).

  1. rf excited optical emission spectrum of radicals generated during hot wire chemical vapour deposition for the preparation of microcrystalline silicon thin film%射频激发热丝化学气相沉积制备硅薄膜过程中光发射谱的研究

    Institute of Scientific and Technical Information of China (English)

    李天微; 刘丰珍; 朱美芳

    2011-01-01

    To study the radicals behavior in the hot wire chemical vapour deposition (HWCVD) process for the preparation of microcrystalline Si (μc-Si: H) thin film, a weak radio frequency (rf) power was introduced to excite the radicals generated in HWCVD chamber. The spectrum of fi-excited HWCVD (rf-HWCVD) was obtained by subtracting the emission of hot wires from the spectrum measured by OES. The influence of the rf power on the rf-HWCVD spectrum can be neglected as the rf power density was less than 0. 1 W/cm2. Under the same deposition parameters, the emission spectra for rf-HWCVD and plasma enhanced CVD (PECVD) processes are different. Under the low deposition pressure ( 7.5 Pa), the intensities of Sill * and Hα vary with the hot wire temperature reversely, which is characteristic of HWCVD with high gas dissociation rate and high concentration of atomic H. The ratio of intensity of Hα to Sill * in the emission spectrum of rf-HWCVD varying with deposition pressure is consistent with the crystalline fraction of μc-Si: H film. The results indicate that the optical emission spectroscopy measurement is a suitable method for the investigation of the HWCVD process excited by a weak rf-power.%采用射频(rf)激发,在热丝化学气相沉积(HWCVD)制备微晶硅薄膜的过程中产生发光基元,测量了rf激发HWCVD(rf-HWCVD)的光发射谱,比较了相同工艺条件下rf-HWCVD和等离子体增强CVD(PECVD)的光发射谱,分析了rf功率、热丝温度和沉积气压对rf-HWCVD光发射谱的影响.结果表明,在射频功率<0.1W/cm1时,rf-HWCVD发射光谱反映了HWCVD高的气体分解效率和高浓度原子氢的特点,能够解释气压变化与微晶硅薄膜微结构的关系,是研究HWCVD气相过程的有效方法之一.

  2. 3D-printed poly(vinylidene fluoride)/carbon nanotube composites as a tunable, low-cost chemical vapour sensing platform.

    Science.gov (United States)

    Kennedy, Z C; Christ, J F; Evans, K A; Arey, B W; Sweet, L E; Warner, M G; Erikson, R L; Barrett, C A

    2017-05-04

    We report the production of flexible, highly-conductive poly(vinylidene fluoride) (PVDF) and multi-walled carbon nanotube (MWCNT) composites as filament feedstock for 3D printing. This account further describes, for the first time, fused deposition modelling (FDM) derived 3D-printed objects with chemiresistive properties in response to volatile organic compounds. The typically prohibitive thermal expansion and die swell characteristics of PVDF were minimized by the presence of MWCNTs in the composites enabling straightforward processing and printing. The nanotubes form a dispersed network as characterized by helium ion microscopy, contributing to excellent conductivity (∼3 × 10(-2) S cm(-1)). The printed composites contain little residual metal particulate relative to parts from commercial PLA-nanocomposite material visualized by micro-X-ray computed tomography (μ-CT) and corroborated with thermogravimetric analysis. Printed sensing strips, with MWCNT loadings up to 15% mass, function as reversible vapour sensors with the strongest responses arising with organic compounds capable of readily intercalating and subsequently swelling the PVDF matrix (acetone and ethyl acetate). A direct correlation between MWCNT concentration and resistance change was also observed, with larger responses (up to 161% after 3 minutes) being generated with decreased MWCNT loadings. These findings highlight the utility of FDM printing in generating low-cost sensors that respond strongly and reproducibly to target vapours. Furthermore, the sensors can be easily printed in different geometries, expanding their utility to wearable form factors. The proposed formulation strategy may be tailored to sense diverse sets of vapour classes through structural modification of the polymer backbone and/or functionalization of the nanotubes within the composite.

  3. 3D-printed poly(vinylidene fluoride)/carbon nanotube composites as a tunable, low-cost chemical vapour sensing platform

    Energy Technology Data Exchange (ETDEWEB)

    Kennedy, Z. C.; Christ, J. F.; Evans, K. A.; Arey, B. W.; Sweet, L. E.; Warner, M. G.; Erikson, R. L.; Barrett, C. A.

    2017-01-01

    We report the production of flexible, highly-conductive poly(vinylidene flouride) (PVDF) and multi-walled carbon nanotube (MWCNT) composites as filament feedstock for 3D-printing. This account further describes, for the first-time, fused deposition modelling (FDM) derived 3D-printed objects with chemiresistive properties in response to volatile organic compounds. The typically prohibitive thermal expansion and die swell characteristics of PVDF were minimized by the presence of MWCNTs in the composites enabling straightforward processing and printing. The nanotubes form a dispersed network as characterized by helium ion microscopy, contributing to excellent conductivity (1 x 10-2 S / cm). The printed composites contain little residual metal particulate relative to parts from commercial PLA-nanocomposite material visualized by micro X-ray computed tomography (μ-CT) and corroborated with thermogravimetric analysis. Printed sensing strips, with MWCNT loadings up to 15 % mass, function as reversible vapour sensors with the strongest responses arising with organic compounds capable of readily intercalating, and subsequently swelling the PVDF matrix (acetone and ethyl acetate). A direct correlation between MWCNT concentration and resistance change was also observed, with larger responses (up to 161 % after 3 minutes) generated with decreased MWCNT loadings. These findings highlight the utility of FDM printing in generating low-cost sensors that respond strongly and reproducibly to target vapours. Furthermore, the sensors can be easily printed in different geometries, expanding their utility to wearable form factors. The proposed formulation strategy may be tailored to sense diverse sets of vapour classes through structural modification of the polymer backbone and/or functionalization of the nanotubes within the composite.

  4. Carbon nanofiber growth in plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Denysenko, I.; Ostrikov, K.; Cvelbar, U.; Mozetic, M.; Azarenkov, N. A.

    2008-10-01

    A theoretical model to describe the plasma-assisted growth of carbon nanofibers (CNFs) is proposed. Using the model, the plasma-related effects on the nanofiber growth parameters, such as the growth rate due to surface and bulk diffusion, the effective carbon flux to the catalyst surface, the characteristic residence time and diffusion length of carbon atoms on the catalyst surface, and the surface coverages, have been studied. The dependence of these parameters on the catalyst surface temperature and ion and etching gas fluxes to the catalyst surface is quantified. The optimum conditions under which a low-temperature plasma environment can benefit the CNF growth are formulated. These results are in good agreement with the available experimental data on CNF growth and can be used for optimizing synthesis of related nanoassemblies in low-temperature plasma-assisted nanofabrication.

  5. A new modular multichamber plasma enhanced chemical vapor deposition system

    Science.gov (United States)

    Madan, A.; Rava, P.; Schropp, R. E. I.; von Roedern, B.

    1993-06-01

    The present work reports on a new modular UHV multichamber PECVD system with characteristics which prevent both the incorporation of residual impurities and cross contamination between different layers. A wide range of intrinsic and doped hydrogenated amorphous silicon (a-Si:H) materials have been produced and single junction pin solar cells with an efficiency greater than 10% have been readily obtained with little optimization. The system contains three UHV modular process zones (MPZ's); the MPZ's and a load lock chamber are located around a central isolation and transfer zone which contains the transport mechanism consisting of an arm with radial and linear movement. This configuration allows for introduction of the substrate into the MPZ's in any sequence so that any type of multilayer device can be produced. The interelectrode distance in the MPZ's can be adjusted between 1 and 5 cm. This has been found to be an important parameter in the optimisation of the deposition rate and of the uniformity. The multichamber concept also allows individually optimized deposition temperatures and interelectrode distances for the various layers. The system installed in Utrecht will be employed for further optimization of single junction solar cells and for research and development of stable a-Si:H tandem cells.

  6. Water vapour variability and trends in the Arctic stratosphere

    Science.gov (United States)

    Thölix, Laura; Kivi, Rigel; Backman, Leif; Karpechko, Alexey

    2014-05-01

    Water vapour in the upper troposphere-lower stratosphere (UTLS) is a radiatively and chemically important trace gas. Stratospheric water vapour also affects ozone chemistry through odd-hydrogen chemistry and formation of polar stratospheric clouds (PSC). Both transport and chemistry contribute to the extratropical lower stratospheric water vapour distribution and trends. The main sources of stratospheric water vapour are intrusion through the tropical tropopause and production from oxidation of methane. Accurate observations of UTLS water vapour are difficult to obtain due to the strong gradient in the water vapour profile over the tropopause. However, modelling the stratospheric water vapour distribution is challenging and accurate measurements are needed for model validation. Trends in Arctic water vapour will be analysed and explained in terms of contribution from different processes (transport and chemistry), using observations and chemistry transport model (CTM) simulations. Accurate water vapour soundings from Sodankylä will be used to study water vapour within the Arctic polar vortex, including process studies on formation of PSCs and dehydration. Water vapour profiles measured during the LAPBIAT atmospheric sounding campaign in Sodankylä in January 2010 indicated formation of ice clouds and dehydration. Effects on ozone chemistry will also be studied. Global middle atmospheric simulations have been performed with the FinROSE-ctm using ERA-Interim winds and temperatures. The FinROSE-ctm is a global middle atmosphere model that produces the distribution of 30 long-lived species and tracers and 14 short-lived species. The chemistry describes around 110 gas phase reactions, 37 photodissociation processes and the main heterogeneous reactions related to aerosols and polar stratospheric clouds.

  7. Absence of the 90 K structural transition in CuV{sub 2}S{sub 4} crystals grown by chemical vapour transport using TeCl{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Crandles, D A [Department of Physics, Brock University, St Catharines, ON, L2S 3A1 (Canada); Reedyk, M [Department of Physics, Brock University, St Catharines, ON, L2S 3A1 (Canada); Wardlaw, G [Department of Physics, Brock University, St Catharines, ON, L2S 3A1 (Canada); Razavi, F S [Department of Physics, Brock University, St Catharines, ON, L2S 3A1 (Canada); Hagino, T [Department of Materials Science and Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran, Hokkaido 050-8535 (Japan); Nagata, S [Department of Materials Science and Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran, Hokkaido 050-8535 (Japan); Shimono, I [Hokkaido Industrial Technology Centre, 379 Kikyo-cho, Hakodate, Hokkaido 041-0801 (Japan); Kremer, R K [Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)

    2005-08-03

    Various physical properties (magnetization, specific heat, optical reflectance, electrical resistivity) of CuV{sub 2}S{sub 4} crystals grown by chemical vapour transport using TeCl{sub 4} as the transporting agent have been measured. The data show slight differences compared to samples grown using different techniques. These differences include the absence of a sharp drop in magnetization and the absence of a peak in the heat capacity near 90 K. These differences suggest that the cubic-tetragonal phase transition near 90 K does not occur in these particular crystals. The reflectance of the same crystals has been studied from (70-20 000 cm{sup -1}) for temperatures between 40 and 300 K and the data are consistent with those for a disordered metal. A high frequency absorption, perhaps an interband transition, has been observed in addition to absorption due to strongly scattered free carriers.

  8. Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the c-Axis Parallel to the Substrate

    Institute of Scientific and Technical Information of China (English)

    吕建国; 叶志镇; 汪雷; 赵炳辉; 黄靖云

    2002-01-01

    We report on N-doped p-type ZnO films with the c-axis parallel to the substrate. ZnO films were prepared onan α-A12O3 (0001) substrate by solid-source chemical vapour deposition (CVD). Zn( CH3COO)2.2H2O was usedas the precursor and CH3COONH4 as the nitrogen source. The growth temperature was varied from 300℃ C to600℃ C. The as-grown ZnO film deposited at 500° C showed p-type conduction with its resistivity of 42 Ωcrm, carrierdensity 3.7 × 1017 cm-3 and Hall mobility 1.26cm2V-1.s-1 at room temperature, which are the best propertiesfor p-type ZnO deposited by CVD. The p-type ZnO film possesses a transmittance of about 85% in the visibleregion and a bandgap of 3.21 eV at room temperature.

  9. Comparative Study of Properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 Films Grown by Low-Pressure Metal Organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    赵佰军; 杨洪军; 杜国同; 缪国庆; 杨天鹏; 张源涛; 高仲民; 王金忠; 方秀军; 刘大力; 李万成; 马燕; 杨晓天; 刘博阳

    2003-01-01

    ZnO films were deposited by low-pressure metal organic chemical vapour deposition on epi-GaN/Al2O3 films and c-Al2O3 substrates.The structure and optical properties of the ZnO/GaN/Al2O3 and ZnO/Al2O3 films have been investigated to determine the differences between the two substrates.ZnO films on GaN/Al2O3 show very strong emission features associated with exciton transitions,just as ZnO films on Al2O3,while the crystalline structural qualities for ZnO films on GaN/Al2O3 are much better than those for ZnO films directly grown on Al2O3 substrates.Zn and O elements in the deposited ZnO/GaN/Al2O3 and ZnO/Al2O3 films are investigated and compared by x-ray photoelectron spectroscopy.According to the statistical results,the Zn/O ratio changes from Zn-rich for ZnO/Al2O3 films to O-rich for ZnO/GaN/Al2O3 films.

  10. A catalyst-free synthesis of germanium nanowires obtained by combined X-ray chemical vapour deposition of GeH$_4$ and low-temperature thermal treatment techniques

    Indian Academy of Sciences (India)

    CHIARA DEMARIA; ALDO ARRAIS; PAOLA BENZI; ENRICO BOCCALERI; PAOLA ANTONIOTTI; ROBERTO RABEZZANA; LORENZA OPERTI

    2016-04-01

    A catalyst-free innovative synthesis, by combined X-ray chemical vapour deposition and lowtemperature thermal treatments, which has not been applied since so far to the growth of germanium nanowires (Ge-NWs), produced high yields of the nanoproducts with theGeH4 reactant gas. Nanowires were grown on both surfaces of a conventional deposition quartz substrate. They were featured with high purity and very large aspect ratios (ranging from 100 to 500). Products were characterized by scanning electron microscopy with energy-dispersiveatomic X-ray fluorescence and transmission electron microscopies, X-ray powder diffraction diffractometry, thermogravimetric analysis with differential scanning calorimetry, vibrational infrared and Raman and ultraviolet–visible–near infrared spectroscopies. A quantitative nanowire bundles formation was observed in the lower surface of the quartz substrate positioned over a heating support, whilst spots of nanoflowers constituted by Ge-NWs emerged from a bulk amorphous germanium film matter, deposited on the upper surface of the substrate. Thenanoproducts were characterized by crystalline core morphology, providing semiconductive features and optical band gap of about 0.67 eV. The possible interpretative base-growth mechanisms of the nanowires, stimulated bythe concomitant application of radiant and thermal conditions with no specific added metal catalyst, are hereafter investigated and presented.

  11. On-line speciation of inorganic and methyl mercury in waters and fish tissues using polyaniline micro-column and flow injection-chemical vapour generation-inductively coupled plasma mass spectrometry (FI-CVG-ICPMS).

    Science.gov (United States)

    Krishna, M V Balarama; Chandrasekaran, K; Karunasagar, D

    2010-04-15

    A simple and efficient method for the determination of ultra-trace amounts of inorganic mercury (iHg) and methylmercury (MeHg) in waters and fish tissues was developed using a micro-column filled with polyaniline (PANI) coupled online to flow injection-chemical vapour generation-inductively coupled plasma mass spectrometry (FI-CVG-ICPMS) system. Preliminary studies indicated that inorganic and methyl mercury species could be separated on PANI column in two different speciation approaches. At pH extraction of the mercury species from biological samples, was used directly to separate MeHg from iHg in the fish tissues (tuna fish ERM-CE 463, ERM-CE 464 and IAEA-350) by PANI column using speciation procedure 1. The determined values were in good agreement with certified values. Under optimal conditions, the limits of detection (LODs) were 2.52 pg and 3.24 pg for iHg and MeHg (as Hg) respectively. The developed method was applied successfully to the direct determination of iHg and MeHg in various waters (tap water, lake water, ground water and sea-water) and the recoveries for the spiked samples were in the range of 96-102% for both the Hg species.

  12. Annealing effects on capacitance-voltage characteristics of a-Si/SiN(x) multilayer prepared using hot-wire chemical vapour deposition.

    Science.gov (United States)

    Panchal, A K; Rai, D K; Solanki, C S

    2011-04-01

    Post-deposition annealing of a-Si/SiN(x) multilayer films at different temperature shows varying shift in high frequency (1 MHz) capacitance-voltage (HFCV) characteristics. Various a-Si/SiN(x) multilayer films were deposited using hot wire chemical vapor deposition (HWCVD) and annealed in the temperature range of 800 to 900 degrees C to precipitate Si quantum dots (Si-QD) in a-Si layers. HFCV measurements of the as-deposited and annealed films in metal-insulator-semiconductor (MIS) structures show hysterisis in C-V curves. The hysteresis in the as-deposited films and annealed films is attributed to charge trapping in Si-dangling bonds in a-Si layer and in Si-QD respectively. The charge trapping density in Si-QD increases with temperature while the interface defects density (D(it)) remains constant.

  13. Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP

    Energy Technology Data Exchange (ETDEWEB)

    Mohandas, Reshma A.; Freeman, Joshua R., E-mail: j.r.freeman@leeds.ac.uk; Rosamond, Mark C.; Chowdhury, Siddhant; Cunningham, John E.; Davies, A. Giles; Linfield, Edmund H.; Dean, Paul [School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT (United Kingdom); Hatem, Osama [School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT (United Kingdom); Department of Engineering Physics, Faculty of Engineering, Tanta University, PO Box 31521, Tanta (Egypt); Ponnampalam, Lalitha; Fice, Martyn; Seeds, Alwyn J. [Department of Electronic and Electrical Engineering, University College London, London WC1E 6BT (United Kingdom); Cannard, Paul J.; Robertson, Michael J.; Moodie, David G. [CIP Technologies, Adastral Park, Martlesham Heath, Ipswich, Suffolk IP5 3RE (United Kingdom)

    2016-04-21

    We demonstrate the generation of continuous wave terahertz (THz) frequency radiation from photomixers fabricated on both Fe-doped InGaAs and Fe-doped InGaAsP, grown by metal-organic chemical vapor deposition. The photomixers were excited using a pair of distributed Bragg reflector lasers with emission around 1550 nm, and THz radiation was emitted over a bandwidth of greater than 2.4 THz. Two InGaAs and four InGaAsP wafers with different Fe doping concentrations were investigated, with the InGaAs material found to outperform the InGaAsP in terms of emitted THz power. The dependencies of the emitted power on the photomixer applied bias, incident laser power, and material doping level were also studied.

  14. Deposition of cobalt and nickel sulfide thin films from thio- and alkylthio-urea complexes as precursors via the aerosol assisted chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mgabi, L.P.; Dladla, B.S. [Department of Chemistry, University of Zululand, Private bag X1001 KwaDlangezwa, 3880 (South Africa); Malik, M.A. [School of Chemistry, The University of Manchester, Oxford Road, Manchester M13 9PL (United Kingdom); Garje, Shivram S. [Department of Chemistry, University of Mumbai, Vidyanagari, Santacruz (East), Mumbai 400098 (India); Akhtar, J. [Nanoscience and Materials Synthesis Lab, Department of Physics, COMSATS, Institute of Information Technology (CIIT), Chak shahzad, Islamabad (Pakistan); Revaprasadu, N., E-mail: RevaprasaduN@unizulu.ac.za [Department of Chemistry, University of Zululand, Private bag X1001 KwaDlangezwa, 3880 (South Africa)

    2014-08-01

    We report the synthesis of Co(II) and Ni(II) thiourea and alkylthiourea complexes by reacting the metal salts (CoCl{sub 2} and NiCl{sub 2}) with the thiourea, phenylthiourea and dicyclohexylthiourea ligands in a 1:2 ratio. The complexes, [CoCl{sub 2}(CS(NH{sub 2}){sub 2}){sub 2}] (I), [CoCl{sub 2}(CSNHC{sub 6}H{sub 5}NH{sub 2}){sub 2} (II) and [CoCI{sub 2}(SC(NHC{sub 6}H{sub 11}){sub 2}){sub 2}] (III), [NiCl{sub 2}(CS(NH{sub 2}){sub 2}){sub 2}] (IV), [NiCl{sub 2}(CSNHC{sub 6}H{sub 5}NH{sub 2}){sub 2}] (V) and [NiCl{sub 2}(SC(NHC{sub 6}H{sub 11}){sub 2}){sub 2}] (VI) were characterized by C, H, N analysis and Fourier transform infrared spectroscopy. Thermogravimetric analysis shows that all complexes undergo a two step decomposition process except for [NiCl{sub 2}(CSNHC{sub 6}H{sub 5}NH{sub 2}){sub 2}] (V) which decomposes in a single step. The complexes were used as single-source precursors for the deposition of cobalt sulfide and nickel sulfide thin films by aerosol assisted chemical vapor deposition at temperatures between 350 an 500 °C. The crystallinity of the films was determined by X-ray diffraction and their morphology was determined by scanning electron microscopy. The morphology of the cobalt sulfide thin films varies from randomly oriented platelets, to granulated spheres and cubes as the precursor and deposition conditions are changed. For nickel sulfide, the [NiCl{sub 2}(CS(NH{sub 2}){sub 2}){sub 2}] (IV) complex gave rods whereas the [NiCl{sub 2}(CSNHC{sub 6}H{sub 5}NH{sub 2}){sub 2}] (V) produced spherical particles. - Highlights: • We report the synthesis of Co(II) and Ni(II) thiourea and alkylthiourea complexes. • C, H, N analysis and Fourier transform infrared spectroscopy characterization • NiS and CoS thin films deposited by aerosol assisted chemical vapor deposition • X-ray diffraction characterization of the phase of the films • Film morphology determined by scanning electron microscopy.

  15. Investigation of chemical vapour deposition MoS2 field effect transistors on SiO2 and ZrO2 substrates

    Science.gov (United States)

    Liu, Xi; Chai, Yang; Liu, Zhaojun

    2017-04-01

    With the development of portable electronics, higher performance transistors are required to reduce the form factor and improve the performance of the devices. The key issue relies on developing transistors with outstanding electrical properties and low energy consumption at small scale. Here we demonstrate chemical vapor deposition (CVD) grown MoS2 transistors with a high on/off ratio using ZrO2 as a gate dielectric. Using 10 nm thick ZrO2, the transistor has an on/off ratio of 108, a sub-threshold swing of 0.1 V/dec, and a mobility of 64.66 cm2 V-1 s-1. Compared to the MoS2 devices grown on 300 nm SiO2, the electrical performance demonstrates an all round improvement, which indicates the high crystalline quality of MoS2/ZrO2. Owing to the high-k ZrO2 dielectrics, the MoS2 transistor has a high on/off ratio, a low operating voltage, and good channel modulation capability which ensures that MoS2 is a good candidate for low power electronics.

  16. Porous Silicon & Titanium Dioxide Coatings Prepared by Atmospheric Pressure Plasma Jet Chemical Vapour Deposition Technique-A Novel Coating Technology for Photovoltaic Modules

    Directory of Open Access Journals (Sweden)

    S. Bhatt

    2011-01-01

    Full Text Available Atmospheric Pressure Plasma Jet (APPJ is an alternative for wet processes used to make anti reflection coatings and smooth substrate surface for the PV module. It is also an attractive technique because of it’s high growth rate, low power consumption, lower cost and absence of high cost vacuum systems. This work deals with the deposition of silicon oxide from hexamethyldisiloxane (HMDSO thin films and titanium dioxide from tetraisopropyl ortho titanate using an atmospheric pressure plasma jet (APPJ system in open air conditions. A sinusoidal high voltage with a frequency between 19-23 kHz at power up to 1000 W was applied between two tubular electrodes separated by a dielectric material. The jet, characterized by Tg ~ 600-800 K, was mostly laminar (Re ~ 1200 at the nozzle exit and became partially turbulent along the jet axis (Re ~ 3300. The spatially resolved emission spectra showed OH, N2, N2+ and CN molecular bands and O, H, N, Cu and Cr lines as well as the NO2 chemiluminescence continuum (450-800 nm. Thin films with good uniformity on the substrate were obtained at high deposition rate, between 800 -1000 nm.s-1, and AFM results revealed that coatings are relatively smooth (Ra ~ 2 nm. The FTIR and SEM analyses were better used to monitor the chemical composition and the morphology of the films in function of the different experimental conditions.

  17. Resonant and nonresonant vibrational excitation of ammonia molecules in the growth of gallium nitride using laser-assisted metal organic chemical vapour deposition

    Science.gov (United States)

    Golgir, Hossein Rabiee; Zhou, Yun Shen; Li, Dawei; Keramatnejad, Kamran; Xiong, Wei; Wang, Mengmeng; Jiang, Li Jia; Huang, Xi; Jiang, Lan; Silvain, Jean Francois; Lu, Yong Feng

    2016-09-01

    The influence of exciting ammonia (NH3) molecular vibration in the growth of gallium nitride (GaN) was investigated by using an infrared laser-assisted metal organic chemical vapor deposition method. A wavelength tunable CO2 laser was used to selectively excite the individual vibrational modes. Resonantly exciting the NH-wagging mode (v2) of NH3 molecules at 9.219 μm led to a GaN growth rate of 84 μm/h, which is much higher than the reported results. The difference between the resonantly excited and conventional thermally populated vibrational states was studied via resonant and nonresonant vibrational excitations of NH3 molecules. Resonant excitation of various vibrational modes was achieved at 9.219, 10.35, and 10.719 μm, respectively. Nonresonant excitation was conducted at 9.201 and 10.591 μm, similar to conventional thermal heating. Compared to nonresonant excitation, resonant excitation noticeably promotes the GaN growth rate and crystalline quality. The full width at half maximum value of the XRD rocking curves of the GaN (0002) and GaN (10-12) diffraction peaks decreased at resonant depositions and reached its minimum value of 45 and 53 arcmin, respectively, at the laser wavelength of 9.219 μm. According to the optical emission spectroscopic studies, resonantly exciting the NH3 v2 mode leads to NH3 decomposition at room temperature, reduces the formation of the TMGa:NH3 adduct, promotes the supply of active species in GaN formation, and, therefore, results in the increased GaN growth rate.

  18. Estimation of vapour pressure and partial pressure of subliming compounds by low-pressure thermogravimetry

    Indian Academy of Sciences (India)

    G V Kunte; Ujwala Ail; P K Ajikumar; A K Tyagi; S A Shivashankar; A M Umarji

    2011-12-01

    A method for the estimation of vapour pressure and partial pressure of subliming compounds under reduced pressure, using rising temperature thermogravimetry, is described in this paper. The method is based on our recently developed procedure to estimate the vapour pressure from ambient pressure thermogravimetric data using Langmuir equation. Using benzoic acid as the calibration standard, vapour pressure–temperature curves are calculated at 80, 160 and 1000 mbar for salicylic acid and vanadyl bis-2,4-pentanedionate, a precursor used for chemical vapour deposition of vanadium oxides. Using a modification of the Langmuir equation, the partial pressure of these materials at different total pressures is also determined as a function of temperature. Such data can be useful for the deposition of multi-metal oxide thin films or doped thin films by chemical vapour deposition (CVD).

  19. Low Temperature Growth of In2O3and InN Nanocrystals on Si(111) via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In.

    Science.gov (United States)

    Zervos, Matthew; Tsokkou, Demetra; Pervolaraki, Maria; Othonos, Andreas

    2009-02-21

    Indium oxide (In2O3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O2at 1000 °C but also at temperatures as low as 500 °C by the sublimation of ammonium chloride (NH4Cl) which is incorporated into the In under a gas flow of nitrogen (N2). Similarly InN NCs have also been obtained using sublimation of NH4Cl in a gas flow of NH3. During oxidation of In under a flow of O2the transfer of In into the gas stream is inhibited by the formation of In2O3around the In powder which breaks up only at high temperatures, i.e.T > 900 °C, thereby releasing In into the gas stream which can then react with O2leading to a high yield formation of isolated 500 nm In2O3octahedrons but also chains of these nanostructures. No such NCs were obtained by direct oxidation forTG sublimation of NH4Cl into NH3and HCl at around 338 °C which in turn produces an efficient dispersion and transfer of the whole In into the gas stream of N2where it reacts with HCl forming primarily InCl. The latter adsorbs onto the Si(111) where it reacts with H2O and O2leading to the formation of In2O3nanopyramids on Si(111). The rest of the InCl is carried downstream, where it solidifies at lower temperatures, and rapidly breaks down into metallic In upon exposure to H2O in the air. Upon carrying out the reaction of In with NH4Cl at 600 °C under NH3as opposed to N2, we obtain InN nanoparticles on Si(111) with an average diameter of 300 nm.

  20. Study of three dimensional germanium islands and ultrathin Si{sub x}Ge{sub 1-x} films grown by chemical vapour deposition on Si(111)-(7 x 7)

    Energy Technology Data Exchange (ETDEWEB)

    Gopalakrishnan, Selvi

    2005-07-15

    This work probed at the atomic level, processes that occur during the Ge three dimensional island formation and on ultrathin Si{sub x}Ge{sub 1-x} epitaxial growth by chemical vapour deposition on the Si(111)-(7 x 7) substrate with the aid of surface probe techniques such as STM and AFM, XPS, as well as TEM imaging of any 3D island formation. This work could essentially be divided into two parts. The first part studied the growth of the strained Ge on Si system with emphasis on the characterisation of the CVD grown three dimensional germanium islands on a standard Si(111)-(7 x 7) substrate as well as on a surface modified Si(111)-(7 x 7) substrate. The characterisation was carried out using a combination of techniques. XPS was used to calculate the effective coverages of deposited germanium, the STM was used to image the top most layers whenever possible and AFM, cross-sectional TEM and HRTEM to image the three dimensional islands. The possible causes of the surface modification were also examined. In the second part of this work the growth morphologies ultrathin Si{sub x}Ge{sub 1-x} layers grown on the Si(111)-(7 x 7) substrate at 750 K where the hydrogen desorption rate from the Si(111) surface is low and at 850 K which was the temperature at which the rate of hydrogen desorption from the Si(111) surface was a maximum were investigated. In addition modelling of ultrathin layer growth was carried out using two existing growth models. (orig.)

  1. Plasma-enhanced growth, composition, and refractive index of silicon oxy-nitride films

    DEFF Research Database (Denmark)

    Mattsson, Kent Erik

    1995-01-01

    Secondary ion mass spectrometry and refractive index measurements have been carried out on silicon oxy-nitride produced by plasma-enhanced chemical vapor deposition (PECVD). Nitrous oxide and ammonia were added to a constant flow of 2% silane in nitrogen, to produce oxy-nitride films with atomic...... nitrogen concentrations between 2 and 10 at. %. A simple atomic valence model is found to describe both the measured atomic concentrations and published material compositions for silicon oxy-nitride produced by PECVD. A relation between the Si–N bond concentration and the refractive index is found....... This relation suggest that the refractive index of oxy-nitride with a low nitrogen concentration is determined by the material density. It is suggested that the relative oxygen concentration in the gas flow is the major deposition characterization parameter, and that water vapor is the predominant reaction by...

  2. Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

    Directory of Open Access Journals (Sweden)

    Chia-Man Chou

    2017-07-01

    Full Text Available We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD incorporated with radio-frequency (r.f.-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr. High oxygen vapor pressure (150 mTorr and low r.f. power (10 W are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

  3. Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

    Science.gov (United States)

    Chou, Chia-Man; Lai, Chih-Chang; Chang, Chih-Wei; Wen, Kai-Shin; Hsiao, Vincent K. S.

    2017-07-01

    We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

  4. Plasma Enhanced Growth of Carbon Nanotubes For Ultrasensitive Biosensors

    Science.gov (United States)

    Cassell, Alan M.; Li, J.; Ye, Q.; Koehne, J.; Chen, H.; Meyyappan, M.

    2004-01-01

    The multitude of considerations facing nanostructure growth and integration lends itself to combinatorial optimization approaches. Rapid optimization becomes even more important with wafer-scale growth and integration processes. Here we discuss methodology for developing plasma enhanced CVD growth techniques for achieving individual, vertically aligned carbon nanostructures that show excellent properties as ultrasensitive electrodes for nucleic acid detection. We utilize high throughput strategies for optimizing the upstream and downstream processing and integration of carbon nanotube electrodes as functional elements in various device types. An overview of ultrasensitive carbon nanotube based sensor arrays for electrochemical biosensing applications and the high throughput methodology utilized to combine novel electrode technology with conventional MEMS processing will be presented.

  5. Plasma Enhanced Growth of Carbon Nanotubes For Ultrasensitive Biosensors

    Science.gov (United States)

    Cassell, Alan M.; Li, J.; Ye, Q.; Koehne, J.; Chen, H.; Meyyappan, M.

    2004-01-01

    The multitude of considerations facing nanostructure growth and integration lends itself to combinatorial optimization approaches. Rapid optimization becomes even more important with wafer-scale growth and integration processes. Here we discuss methodology for developing plasma enhanced CVD growth techniques for achieving individual, vertically aligned carbon nanostructures that show excellent properties as ultrasensitive electrodes for nucleic acid detection. We utilize high throughput strategies for optimizing the upstream and downstream processing and integration of carbon nanotube electrodes as functional elements in various device types. An overview of ultrasensitive carbon nanotube based sensor arrays for electrochemical biosensing applications and the high throughput methodology utilized to combine novel electrode technology with conventional MEMS processing will be presented.

  6. Vapour Intrusion into Buildings - A Literature Review

    Science.gov (United States)

    This chapter provides a review of recent research on vapour intrusion of volatile organic compounds (VOCs) into buildings. The chapter builds on a report from Tillman and Weaver (2005) which reviewed the literature on vapour intrusion through 2005. Firstly, the term ‘vapour intru...

  7. Chemical vapour deposition of carbon nanotubes

    CSIR Research Space (South Africa)

    Arendse, CJ

    2006-02-01

    Full Text Available Carbon nanotubes (CNTs) have proven to show great promise in a wide variety of applications such as fabrication of strong composites, nano-scale electronic devices, electrochemical devices, power devices, to name a few. This is largely due...

  8. Vapour phase corrosion inhibitors from South African renewable resources and their evaluation

    CSIR Research Space (South Africa)

    Vuorinen, E

    2006-02-01

    Full Text Available ) in an environment depends on the vapour pressure of the compounds. Suitable chemicals from the petroleum industry are used as corrosion inhibitors but often chemicals from renewable resources have been overlooked. Furfural is produced from bagasse (a by... of amines proved to be excellent VCIs for mild steel. Screening of potential VCIs from furfural and furfural derivatives will be done using thermogravimetry. Vapour Phase Corrosion Inhibitors from South African Renewable Resources and their Evaluation...

  9. Simulation of the isotopic composition of stratospheric water vapour - Part 2: Investigation of HDO/H2O variations

    OpenAIRE

    Eichinger, Roland; Jöckel, Patrick; Lossow, Stefan

    2015-01-01

    Studying the isotopic composition of water vapour in the lower stratosphere can reveal the driving mechanisms of changes in the stratospheric water vapour budget and therefore help to explain the trends and variations of stratospheric water vapour during recent decades. We equipped a global chemistry climate model with a description of the water isotopologue HDO, comprising its physical and chemical fractionation effects throughout the hydrological cycle. We use this m...

  10. Simulation of the isotopic composition of stratospheric water vapour – Part 2: Investigation of HDO / H2O variations

    OpenAIRE

    R. Eichinger; Jöckel, P.; S. Lossow

    2015-01-01

    Studying the isotopic composition of water vapour in the lower stratosphere can reveal the driving mechanisms of changes in the stratospheric water vapour budget and therefore help to explain the trends and variations of stratospheric water vapour during recent decades. We equipped a global chemistry climate model with a description of the water isotopologue HDO, comprising its physical and chemical fractionation effects throughout the hydrological cycle. We use this mode...

  11. The Research on Atmospheric Pressure Water Vapour Plasma Generation and Application for the Destruction of Wastes

    Directory of Open Access Journals (Sweden)

    Viktorija Grigaitiene

    2013-01-01

    Full Text Available In the Lithuanian Energy Institute an experimental atmospheric pressure Ar/water vapour plasma torch has been designed and tested. The power of plasma torch was estimated 40 ÷ 69 kW, the mean temperature of plasma jet at the exhaust nozzle was 2300÷2900K. The chemical compositionof water vapour plasma was established from the emission spectrum lines at 300 ÷ 800nm range. The main species observed in Ar/water vapour plasma were: Ar, OH, H, O, Cu. The experiments on water vapour steam reforming were performed. The results confirmed that water vapour plasma has the unique properties – high enthalpy and environmentally friendly conditions. It could be employed for environmental purposes such as destruction of wastes into simple molecules or conversion to synthetic gas.

  12. Low Temperature Growth of In2O3and InN Nanocrystals on Si(111 via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In

    Directory of Open Access Journals (Sweden)

    Tsokkou Demetra

    2009-01-01

    Full Text Available Abstract Indium oxide (In2O3 nanocrystals (NCs have been obtained via atmospheric pressure, chemical vapour deposition (APCVD on Si(111 via the direct oxidation of In with Ar:10% O2at 1000 °C but also at temperatures as low as 500 °C by the sublimation of ammonium chloride (NH4Cl which is incorporated into the In under a gas flow of nitrogen (N2. Similarly InN NCs have also been obtained using sublimation of NH4Cl in a gas flow of NH3. During oxidation of In under a flow of O2the transfer of In into the gas stream is inhibited by the formation of In2O3around the In powder which breaks up only at high temperatures, i.e.T > 900 °C, thereby releasing In into the gas stream which can then react with O2leading to a high yield formation of isolated 500 nm In2O3octahedrons but also chains of these nanostructures. No such NCs were obtained by direct oxidation forT G < 900 °C. The incorporation of NH4Cl in the In leads to the sublimation of NH4Cl into NH3and HCl at around 338 °C which in turn produces an efficient dispersion and transfer of the whole In into the gas stream of N2where it reacts with HCl forming primarily InCl. The latter adsorbs onto the Si(111 where it reacts with H2O and O2leading to the formation of In2O3nanopyramids on Si(111. The rest of the InCl is carried downstream, where it solidifies at lower temperatures, and rapidly breaks down into metallic In upon exposure to H2O in the air. Upon carrying out the reaction of In with NH4Cl at 600 °C under NH3as opposed to N2, we obtain InN nanoparticles on Si(111 with an average diameter of 300 nm.

  13. Sistema RTP: uma técnica poderosa para o monitoramento da formação de nanotubos de carbono durante o processo por deposição de vapor químico TPR system: a powerful technique to monitor carbon nanotube formation during chemical vapour deposition

    Directory of Open Access Journals (Sweden)

    Juliana Cristina Tristão

    2010-01-01

    Full Text Available In this work, a TPR (Temperature Programmed Reduction system is used as a powerful tool to monitor carbon nanotubes production during CVD (Chemical Vapour Deposition, The experiments were carried out using catalyst precursors based on Fe-Mo supported on Al2O3 and methane as carbon source. As methane reacts on the Fe metal surface, carbon is deposited and H2 is produced. TPR is very sensitive to the presence of H2 and affords information on the temperature where catalyst is active to form different forms of carbon, the reaction kinetics, the catalyst deactivation and carbon yields.

  14. Ozone and water vapour in the austral polar stratospheric vortex and sub-vortex

    OpenAIRE

    Peet, E.; V. Rudakov; V. Yushkov; G. Redaelli; A. R. MacKenzie

    2004-01-01

    In-situ measurements of ozone and water vapour, in the Antarctic lower stratosphere, were made as part of the APE-GAIA mission in September and October 1999. The measurements show a distinct difference above and below the 415K isentrope. Above 415K, the chemically perturbed region of low ozone and water vapour is clearly evident. Below 415K, but still above the tropopause, no sharp meridional gradients in ozone and water vapour were observed. The observations are consistent with analyses of p...

  15. Plasma-enhanced synthesis of bactericidal quaternary ammonium thin layers on stainless steel and cellulose surfaces.

    Science.gov (United States)

    Jampala, Soujanya N; Sarmadi, M; Somers, E B; Wong, A C L; Denes, F S

    2008-08-19

    We have investigated bottom-up chemical synthesis of quaternary ammonium (QA) groups exhibiting antibacterial properties on stainless steel (SS) and filter paper surfaces via nonequilibrium, low-pressure plasma-enhanced functionalization. Ethylenediamine (ED) plasma under suitable conditions generated films rich in secondary and tertiary amines. These functional structures were covalently attached to the SS surface by treating SS with O 2 and hexamethyldisiloxane plasma prior to ED plasma treatment. QA structures were formed by reaction of the plasma-deposited amines with hexyl bromide and subsequently with methyl iodide. Structural compositions were examined by electron spectroscopy for chemical analysis and Fourier transform infrared spectroscopy, and surface topography was investigated with atomic force microscopy and water contact angle measurements. Modified SS surfaces exhibited greater than a 99.9% decrease in Staphylococcus aureus counts and 98% in the case of Klebsiella pneumoniae. The porous filter paper surfaces with immobilized QA groups inactivated 98.7% and 96.8% of S. aureus and K. pneumoniae, respectively. This technique will open up a novel way for the synthesis of stable and very efficient bactericidal surfaces with potential applications in development of advanced medical devices and implants with antimicrobial surfaces.

  16. Condensation of water vapour on moss-dominated biological soil crust, NW China

    Indian Academy of Sciences (India)

    Xin-Ping Wang; Yan-Xia Pan; Rui Hu; Ya-Feng Zhang; Hao Zhang

    2014-03-01

    Characteristics of water vapour condensation, including the onset, duration, and amount of water vapour condensation on moss-dominated biological soil crust (BSC) and dune sand were studied under simulated conditions with varying air temperature and relative humidity. The simulations were performed in a plant growth chamber using an electronic balance recording the weight of condensation. There was a positive linear correlation between the water vapour condensation and relative humidity while the mean temperature was negatively linearly related to amounts of water vapour condensation for both soil surfaces. The amount of water vapour condensation on BSC and dune sand can be described by the difference between air temperature and dew point with an exponential function, indicating that when the difference of air temperature and dew point exceeds a value of 35.3°C, there will be zero water vapour condensed on BSC. In contrast, when the difference of air temperature and dew point exceeds a value of 20.4°C, the water vapour condensation will be zero for dune sand. In general, when the air is fully saturated with water and the dew point is equal to the current air temperature, the water vapour condensed on BSC attained its maximum value of 0.398 mm, whereas it was 0.058 mm for dune sand. In comparison, water vapour condensed on BSC was at a relatively high temperature and low relative humidity, while we did not detect water vapour condensation on the dune sand under the similar conditions. Physical and chemical analyses of the samples pointed to a greater porosity, high content of fine particles, and high salinity for BSC compared to the dune sand. These results highlight that soil physicochemical properties are the likely factors influencing the mechanism of water vapour condensation under specific meteorological conditions, as onset was earlier and the duration was longer for water vapour condensation on BSC in comparison with that of dune sand. This contributed to

  17. Condensation of water vapour on moss-dominated biological soil crust, NW China

    Science.gov (United States)

    Wang, Xin-Ping; Pan, Yan-Xia; Hu, Rui; Zhang, Ya-Feng; Zhang, Hao

    2014-03-01

    Characteristics of water vapour condensation, including the onset, duration, and amount of water vapour condensation on moss-dominated biological soil crust (BSC) and dune sand were studied under simulated conditions with varying air temperature and relative humidity. The simulations were performed in a plant growth chamber using an electronic balance recording the weight of condensation. There was a positive linear correlation between the water vapour condensation and relative humidity while the mean temperature was negatively linearly related to amounts of water vapour condensation for both soil surfaces. The amount of water vapour condensation on BSC and dune sand can be described by the difference between air temperature and dew point with an exponential function, indicating that when the difference of air temperature and dew point exceeds a value of 35.3◦C, there will be zero water vapour condensed on BSC. In contrast, when the difference of air temperature and dew point exceeds a value of 20.4◦C, the water vapour condensation will be zero for dune sand. In general, when the air is fully saturated with water and the dew point is equal to the current air temperature, the water vapour condensed on BSC attained its maximum value of 0.398 mm, whereas it was 0.058 mm for dune sand. In comparison, water vapour condensed on BSC was at a relatively high temperature and low relative humidity, while we did not detect water vapour condensation on the dune sand under the similar conditions. Physical and chemical analyses of the samples pointed to a greater porosity, high content of fine particles, and high salinity for BSC compared to the dune sand. These results highlight that soil physicochemical properties are the likely factors influencing the mechanism of water vapour condensation under specific meteorological conditions, as onset was earlier and the duration was longer for water vapour condensation on BSC in comparison with that of dune sand. This contributed to

  18. Towards outperforming conventional sensor arrays with fabricated individual photonic vapour sensors inspired by Morpho butterflies

    Science.gov (United States)

    Potyrailo, Radislav A.; Bonam, Ravi K.; Hartley, John G.; Starkey, Timothy A.; Vukusic, Peter; Vasudev, Milana; Bunning, Timothy; Naik, Rajesh R.; Tang, Zhexiong; Palacios, Manuel A.; Larsen, Michael; Le Tarte, Laurie A.; Grande, James C.; Zhong, Sheng; Deng, Tao

    2015-09-01

    Combining vapour sensors into arrays is an accepted compromise to mitigate poor selectivity of conventional sensors. Here we show individual nanofabricated sensors that not only selectively detect separate vapours in pristine conditions but also quantify these vapours in mixtures, and when blended with a variable moisture background. Our sensor design is inspired by the iridescent nanostructure and gradient surface chemistry of Morpho butterflies and involves physical and chemical design criteria. The physical design involves optical interference and diffraction on the fabricated periodic nanostructures and uses optical loss in the nanostructure to enhance the spectral diversity of reflectance. The chemical design uses spatially controlled nanostructure functionalization. Thus, while quantitation of analytes in the presence of variable backgrounds is challenging for most sensor arrays, we achieve this goal using individual multivariable sensors. These colorimetric sensors can be tuned for numerous vapour sensing scenarios in confined areas or as individual nodes for distributed monitoring.

  19. Surface polish of PLA parts in FDM using dichloromethane vapour

    Directory of Open Access Journals (Sweden)

    Jin Yifan

    2017-01-01

    Full Text Available Fused deposition modelling has become one of the most diffused rapid prototyping techniques, which is widely used to fabricate prototypes. However, further application of this technology is severely limited by poor surface roughness. Thus it is necessary to adopt some operations to improve surface quality. Chemical finishing is typically employed to finish parts in fused deposition modelling (FDM. The purpose of this paper is to decrease the surface roughness for polylactic acid (PLA parts in FDM. The chemical reaction mechanism during the treating process is analysed. Then NaOH solution and dichloromethane vapour are used to treat FDM specimens respectively. A 3D laser microscope has been applied to assess the effects in terms of surface topography and roughness. The experimental results show that treatment using dichloromethane vapour performs much better than NaOH solution. Compared with the untreated group, surface roughness obtained through vapour treatment decreases by 88 per cent. This research has been conducted to provide a better method to treat PLA parts using chemical reagents.

  20. Switchable hydrophobic-hydrophilic layer obtained onto porous alumina by plasma-enhanced fluorination

    Institute of Scientific and Technical Information of China (English)

    A.TRESSAUD; C.LABRUG(E)RE; E.DURAND; C.BRIGOULEIX; H.ANDRIESSEN

    2009-01-01

    Conventional lithographic printing processes using porous alumina for offset applications generally use "wet" routes. Recently "dry" processes have been developed which are based on a heat-induced hydrophilic/oleophilic conversion of one or more layers of the coating so that a stronger affinity to-wards ink or water fountain is created at the exposed areas with respect to the surface of the unex-posed coating. Treatments involving rf plasma-enhanced fluorination (PEF) constitute exceptional tools for modifying the surface properties of materials. Many advantages of these techniques can be indeed outlined, when compared to more conventional methods: room-temperature reactions, chemical modi-fications limited to surface only without changing the bulk properties, possible non-equilibrium reac-tions. The influence of PEF treatments on porous alumina layer used in printing plates has been tested with various fluorinated gases (CF4, C3F8and C4F8) and characterized by XPS. The hydrophobic prop-erties of the fluorinated layer have been deduced from contact angle measurements. Using C4Fs rf-PEF treatment, the outmost surface of the hydrophilic alumina substrate used for lithographic printing is hydrophobized, or in other words, the hydrophilic substrate is converted into a support with hydro-phobic properties. Once being hydrophobized, the surface layer may be rendered hydrophilic using a heat pulse, thus giving rise to switchable hydrophobic-hydrophilic properties of the material.

  1. Facile plasma-enhanced deposition of ultrathin crosslinked amino acid films for conformal biometallization.

    Science.gov (United States)

    Anderson, Kyle D; Slocik, Joseph M; McConney, Michael E; Enlow, Jesse O; Jakubiak, Rachel; Bunning, Timothy J; Naik, Rajesh R; Tsukruk, Vladimir V

    2009-03-01

    A novel method for the facile fabrication of conformal, ultrathin, and uniform synthetic amino acid coatings on a variety of practical surfaces by plasma-enhanced chemical vapor deposition is introduced. Tyrosine, which is utilized as an agent to reduce gold nanoparticles from solution, is sublimed into the plasma field and directly deposited on a variety of substrates to form a homogeneous, conformal, and robust polyamino acid coating in a one-step, solvent-free process. This approach is applicable to many practical surfaces and allows surface-induced biometallization while avoiding multiple wet-chemistry treatments that can damage many soft materials. Moreover, by placing a mask over the substrate during deposition, the tyrosine coating can be micropatterned. Upon its exposure to a solution of gold chloride, a network of gold nanoparticles forms on the surface, replicating the initial micropattern. This method of templated biometallization is adaptable to a variety of practical inorganic and organic substrates, such as silicon, glass, nitrocellulose, polystyrene, polydimethylsiloxane, polytetrafluoroethylene, polyethylene, and woven silk fibers. No special pretreatment is necessary, and the technique results in a rapid, conformal amino acid coating that can be utilized for further biometallization.

  2. Switchable hydrophobic-hydrophilic layer obtained onto porous alumina by plasma-enhanced fluorination

    Institute of Scientific and Technical Information of China (English)

    A.; TRESSAUD; C.; LABRUGèRE; E.; DURAND; C.; BRIGOULEIX; H.; ANDRIESSEN

    2009-01-01

    Conventional lithographic printing processes using porous alumina for offset applications generally use "wet" routes. Recently "dry" processes have been developed which are based on a heat-induced hydrophilic/oleophilic conversion of one or more layers of the coating so that a stronger affinity to-wards ink or water fountain is created at the exposed areas with respect to the surface of the unex-posed coating. Treatments involving rf plasma-enhanced fluorination (PEF) constitute exceptional tools for modifying the surface properties of materials. Many advantages of these techniques can be indeed outlined, when compared to more conventional methods: room-temperature reactions, chemical modi-fications limited to surface only without changing the bulk properties, possible non-equilibrium reac-tions. The influence of PEF treatments on porous alumina layer used in printing plates has been tested with various fluorinated gases (CF4, C3F8 and C4F8) and characterized by XPS. The hydrophobic prop-erties of the fluorinated layer have been deduced from contact angle measurements. Using C4F8 rf-PEF treatment, the outmost surface of the hydrophilic alumina substrate used for lithographic printing is hydrophobized, or in other words, the hydrophilic substrate is converted into a support with hydro-phobic properties. Once being hydrophobized, the surface layer may be rendered hydrophilic using a heat pulse, thus giving rise to switchable hydrophobic-hydrophilic properties of the material.

  3. Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon

    Science.gov (United States)

    Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca i

    2017-01-01

    Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C. PMID:28262840

  4. Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition

    CERN Document Server

    Kim, H

    2002-01-01

    We have investigated the growth kinetics of plasma-enhanced Ti atomic layer deposition (ALD) using a quartz crystal microbalance. Ti ALD films were grown at temperatures from 20 to 200 deg. C using TiCl sub 4 as a source gas and rf plasma-produced atomic H as the reducing agent. Postdeposition ex situ chemical analyses of thin films showed that the main impurity is oxygen, mostly incorporated during the air exposure prior to analysis. The thickness per cycle, corresponding to the growth rate, was measured by quartz crystal microbalance as a function of various key growth parameters, including TiCl sub 4 and H exposure time, rf plasma power, and sample temperature. The growth rates were independent of TiCl sub 4 exposure above 1x10 sup 3 L, indicating typical ALD mode growth. The key kinetic parameters for Cl extraction reaction and TiCl sub 4 adsorption kinetics were obtained and the growth kinetics were modeled to predict the growth rates based upon these results. Also, the dependency of growth kinetics on d...

  5. Plasma-enhanced synthesis of surfaces that kill bacteria on contact

    Science.gov (United States)

    Jampala, Soujanya Naga

    High incidences of microbial contamination and infections are a major concern in all existing and evolving technologies of medicine and biology. The propensity towards infections is directly related to bacterial colonization and biofilms on surfaces. This dissertation presents the development of surfaces that can kill bacteria on contact by using cold plasma technology. Quaternary ammonium (QA) groups are known to exhibit antibacterial characteristics in water-based environments. To overcome the limitations of residual toxicity, alternative strategies involving covalent attachment of QA groups to metallic and cellulosic surfaces have been developed. Low pressure, non-equilibrium plasma-enhanced functionalization and subsequent ex situ chemical reactions were designed for step-by-step "bottom-up" chemical synthesis of QA groups covalently anchored to surfaces. The plasma processes under selected discharge parameters generated structure- and functionality-controlled crosslinked networks of macromolecular layers with high concentrations of reactive amine groups. Subsequent derivatization of the plasma-deposited films with alkyl halides yielded surface-bound QA groups rendering surfaces with high bactericidal efficacy against Gram-positive Staphylococcus aureus and Gram-negative Klebsiella pneumoniae. Stainless steel and cotton surfaces sequentially treated with ethylene diamine plasma, n-hexyl bromide and methyl iodide exhibited at least 99.9% and 98% kill of S. aureus and K. pneumoniae respectively. The influence of chemical architecture of QA groups with different alkyl substituents on the efficacy of bactericidal surfaces was quantified. Results from this work will permit the development of novel plasma-aided technologies for the synthesis of antibacterial surfaces with potential biomedical applications. The cold plasma approach can be used on any solid material surfaces including polymers, metals, ceramics and semiconductors.

  6. Intercomparison on measurement of water vapour permeability

    DEFF Research Database (Denmark)

    Hansen, Kurt Kielsgaard

    Three different materials are tested - hard woodfibre board - damp proof course - underlay for roofing The water vapour permeability has been measured according to EN ISO 12572 (2001).......Three different materials are tested - hard woodfibre board - damp proof course - underlay for roofing The water vapour permeability has been measured according to EN ISO 12572 (2001)....

  7. Gas and vapour detection using polypyrrole

    NARCIS (Netherlands)

    Leur, R.H.M. van de; Waal, A. van der

    1999-01-01

    The vapours of organic solvents like toluene, butanon, and ethanol do effect the electrical conductivity of electrochemically synthesised polypyrrole. This property allows the use of polypyrrole in sensors for vapour detection. The conductivity is also a function of temperature and the history of

  8. Plasma enhanced vortex fluidic device manipulation of graphene oxide.

    Science.gov (United States)

    Jones, Darryl B; Chen, Xianjue; Sibley, Alexander; Quinton, Jamie S; Shearer, Cameron J; Gibson, Christopher T; Raston, Colin L

    2016-08-25

    A vortex fluid device (VFD) with non-thermal plasma liquid processing within dynamic thin films has been developed. This plasma-liquid microfluidic platform facilitates chemical processing which is demonstrated through the manipulation of the morphology and chemical character of colloidal graphene oxide in water.

  9. Sensing response of copper phthalocyanine salt dispersed glass with organic vapours

    Energy Technology Data Exchange (ETDEWEB)

    Ridhi, R.; Sachdeva, Sheenam; Saini, G. S. S.; Tripathi, S. K., E-mail: surya@pu.ac.in [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (INDIA) Fax: +91-172-2783336; Tel.:+91-172-2544362 (India)

    2016-05-06

    Copper Phthalocyanine and other Metal Phthalocyanines are very flexible and tuned easily to modify their structural, spectroscopic, optical and electrical properties by either functionalizing them with various substituent groups or by replacing or adding a ligand to the central metal atom in the phthalocyanine ring and accordingly can be made sensitive and selective to various organic species or gaseous vapours. In the present work, we have dispersed Copper Phthalocyanine Salt (CuPcS) in sol-gel glass form using chemical route sol-gel method and studied its sensing mechanism with organic vapours like methanol and benzene and found that current increases onto their exposure with vapours. A variation in the activation energies was also observed with exposure of vapours.

  10. Simulation of the isotopic composition of stratospheric water vapour – Part 2: Investigation of HDO/H2O variations

    OpenAIRE

    R. Eichinger; Jöckel, P.; S. Lossow

    2014-01-01

    Studying the isotopic composition of water vapour in the lower stratosphere can reveal the driving mechanisms of changes in the stratospheric water vapour budget and therefore help to explain the trends and variations of stratospheric water vapour during the recent decades. We equipped a global chemistry climate model with a description of the water isotopologue HDO, comprising its physical and chemical fractionation effects throughout the hydrological cycle. We use this mod...

  11. Surface chemical studies of chemical vapour deposited diamond thin films

    CERN Document Server

    Proffitt, S

    2001-01-01

    could not easily be correlated to the bulk film properties. It is suggested that electron emission arises from the graphite component of graphite- diamond grain boundaries that are present in the nanocrystalline films. species. The adsorbed O and Cl species are more strongly bound to the K layer than they are to the diamond substrate, so thermal desorption of K from the K/CI/diamond or K/O/diamond surface results also in the simultaneous loss ofO and Cl. The phosphorus precursor trisdimethylaminophosphine (TDMAP) has a negligible reactive sticking probability on the clean diamond surface. This can be increased by thermal cracking of the gas phase precursor by a heated filament, resulting in non-activated adsorption to produce an adlayer containing a mixture of surface-bound ligands and phosphorus containing species. The ligands were readily lost upon heating, leaving P, some of which was lost from the surface at higher temperatures. Pre-hydrogenation of the diamond surface inhibited the uptake of cracked TDMA...

  12. Preparation and Characterization of DLC Films by Twinned ECR Microwave Plasma Enhanced CVD for Microelectromechanical Systems (MEMS) Applications

    Institute of Scientific and Technical Information of China (English)

    LI Xin; TANG Zhen-an; DENG Xin-lu; SHEN Yu-xiu; DING Hai-tao

    2004-01-01

    Diamond-like carbon (DLC) films have recently been pursued as the protection of MEMS against their friction and wear.Plasma enhanced chemical vapor deposition (PECVD) technique is very attractive to prepare DLC coating for MEMS.This paper describes the preparation of DLC films using twinned electron cyclotron resonance (ECR) microwave PECVD process.Raman spectra confirmed the DLC characteristics of the films.Fourier-transform infrared (FT-IR)characterization indicates the carbon is bonded in the form sp3 and sp2 with hydrogen participating in bonding.The surface roughness of the films is as low as approximately 0.093nm measured with an atomic force microscope.A CERT microtribometer system is employed to obtain information about the scratch resistance,friction properties,and sliding wear resistance of the films.The results show the deposited DLC films have low friction and good scratch/wear resistance properties.

  13. Plasma enhanced C1 chemistry for green technology

    Science.gov (United States)

    Nozaki, Tomohiro

    2013-09-01

    Plasma catalysis is one of the innovative next generation green technologies that meet the needs for energy and materials conservation as well as environmental protection. Non-thermal plasma uniquely generates reactive species independently of reaction temperature, and these species are used to initiate chemical reactions at unexpectedly lower temperatures than normal thermochemical reactions. Non-thermal plasma thus broadens the operation window of existing chemical conversion processes, and ultimately allows modification of the process parameters to minimize energy and material consumption. We have been specifically focusing on dielectric barrier discharge (DBD) as one of the viable non-thermal plasma sources for practical fuel reforming. In the presentation, room temperature one-step conversion of methane to methanol and hydrogen using a miniaturized DBD reactor (microplasma reactor) is highlighted. The practical impact of plasma technology on existing C1-chemistry is introduced, and then unique characteristics of plasma fuel reforming such as non-equilibrium product distribution is discussed.

  14. [Turpentined vapour baths with coniferous oil].

    Science.gov (United States)

    Raynal, Cécile

    2007-10-01

    This article presents the history of turpentined vapour baths used to treat rheumatismes. In the same time appeared patent medicines made with coniferous oil, sold by chemist near those baths establishments.

  15. A liquid crystalline chirality balance for vapours

    OpenAIRE

    Ohzono, Takuya; Yamamoto, Takahiro; Fukuda, Jun-Ichi

    2014-01-01

    Chiral discrimination of vapours plays an important role in olfactory perception of biological systems and its realization by artificial sensors has been an intriguing challenge. Here, we report a simple method that tangibly visualizes the chirality of a diverse variety of molecules dissolved from vapours with high sensitivity, by making use of a structural change in a periodic microstructure of a nematic liquid crystal confined in open microchannels. This microstructure is accompanied by a t...

  16. Co-TPP functionalized carbon nanotube composites for detection of nitrobenzene and chlorobenzene vapours

    Indian Academy of Sciences (India)

    Swasti Saxena; G S S SAINI; A L Verma

    2015-04-01

    We report preparation of nanocomposites by non-covalent functionalization of carbon nanotubes (CNTs) with metal-tetraphenylporphyrins (M-TPP). Fourier transform infrared (FTIR) spectroscopy and transmission electron microscopy (TEM) results suggest formation of nanosized clusters of Co-TPP around the CNTs surface. X-ray diffraction studies indicate electronic charge re-distribution and strong interactions among CNTs and Co-TPP on functionalization. The films of the hybrid CNT–M-TPP nanocomposite exhibit change in conductivity on exposure to some chemical vapours. In the present work, the films prepared from the cobalt-TPP functionalized CNTs hybrid composites have been investigated for the detection of chlorobenzene (CB) and nitrobenzene (NB) vapours at room temperature. The films show response time of few seconds on exposure to both the NB and CB vapours while the recovery time for NB is significantly different compared to CB. A distinct and highly reproducible response pattern in the relative changes in resistance, recovery and response times on exposure to the vapours of NB, CB and few other chemicals at room temperature has been exploited to differentiate CB and NB vapours from one another.

  17. Solvents for CO2 capture. Structure-activity relationships combined with vapour-liquid-equilibrium measurements

    NARCIS (Netherlands)

    Mergler, Y.L.; Rumley-Van Gurp, R.; Brasser, P.; Koning, M.C. de; Goetheer, E.L.V.

    2011-01-01

    In this study a systematic approach was chosen to test and characterize amine systems for CO2 capture. Vapour-liquid-equilibrium measurements were performed on a homologue series of amines, with ethylene amine as base structure. Various functional groups were used that ranged in chemical and

  18. Solvents for CO2 capture. Structure-activity relationships combined with vapour-liquid-equilibrium measurements

    NARCIS (Netherlands)

    Mergler, Y.L.; Rumley-Van Gurp, R.; Brasser, P.; Koning, M.C. de; Goetheer, E.L.V.

    2011-01-01

    In this study a systematic approach was chosen to test and characterize amine systems for CO2 capture. Vapour-liquid-equilibrium measurements were performed on a homologue series of amines, with ethylene amine as base structure. Various functional groups were used that ranged in chemical and physica

  19. Modelling vapour transport in Surtseyan bombs

    Science.gov (United States)

    McGuinness, Mark J.; Greenbank, Emma; Schipper, C. Ian

    2016-05-01

    We address questions that arise if a slurry containing liquid water is enclosed in a ball of hot viscous vesicular magma ejected as a bomb in the context of a Surtseyan eruption. We derive a mathematical model for transient changes in temperature and pressure due to flashing of liquid water to vapour inside the bomb. The magnitude of the transient pressure changes that are typically generated are calculated together with their dependence on material properties. A single criterion to determine whether the bomb will fragment as a result of the pressure changes is derived. Timescales for ejection of water vapour from a bomb that remains intact are also revealed.

  20. Growth of carbon nanofibers in plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Denysenko, Igor; Ostrikov, Kostya; Tam, Eugene

    2008-10-01

    A theoretical model describing the plasma-assisted growth of carbon nanofibers with metal catalyst particles on top is proposed. Using the model, the plasma-related effects on the nanofiber growth parameters such us the surface diffusion growth rate, the effective carbon flux to the catalyst surface, the characteristic residence time and diffusion length of carbon on the catalyst surface, and the surface coverages, have been studied. It has been found how these parameters depend on the catalyst surface temperature and ion and etching gas fluxes to the catalyst surface. The optimum conditions under which a low-temperature plasma environment can benefit the carbon nanofiber growth are formulated. It has been also found how the plasma environment affects the temperature distribution over the length of the carbon nanofibers. Conditions when the temperature of the catalyst nanoparticles is higher than the temperature of the substrate holder are determined. The results here are in a good agreement with the available experimental data on the carbon nanofiber growth and can be used for optimizing synthesis of nanoassemblies in low-temperature plasma-assisted nanofabrication.

  1. Plasma enhanced chemical vapor deposition of ZrO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Saravanan, K.

    1993-12-09

    Amorphous ZrO{sub 2} thin films were deposited in an inductively coupled PECVD system using a Zr {beta}-diketonate, Zr(C{sub 11}H{sub 19}O{sub 2}){sub 4}, as the precursor. The deposits were air annealed at 900C for 5 min to get pure, single phase, oriented, polycrystalline {alpha}-ZrO{sub 2}. Feasibility of using 2 different types of reactors was investigated. The inductively heated horizontal reactor depositions at 600C had a lower deposition rate and the films were non-uniform in thickness with a columnar structure. The resistively heated vertical reactor depositions at 350C had a higher deposition rate and the films were more uniform in thickness with a fine grained microstructure. The statistical design was demonstrated as an effective technique to analyze the effect of process conditions on the rate of deposition and relative (h00) orientation. The factorial design was used to quantify the two responses in terms of the process variables and their mutual interactions. The statistical design for rate of deposition was found to correlate with the trends observed in classical design.

  2. Method of plasma enhanced chemical vapor deposition of diamond using methanol-based solutions

    Science.gov (United States)

    Tzeng, Yonhua (Inventor)

    2009-01-01

    Briefly described, methods of forming diamond are described. A representative method, among others, includes: providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system; introducing, in the absence of a gas stream, a liquid precursor substantially free of water and containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, into an inlet of the reaction chamber; vaporizing the liquid precursor; and subjecting the vaporized precursor, in the absence of a carrier gas and in the absence in a reactive gas, to a plasma under conditions effective to disassociate the vaporized precursor and promote diamond growth on the substrate in a pressure range from about 70 to 130 Torr.

  3. Glutamate biosensor based on carbon nanowalls grown using plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Tomatsu, Masakazu; Hiramatsu, Mineo; Kondo, Hiroki; Hori, Masaru

    2015-09-01

    Carbon nanowalls (CNWs) are composed of few-layer graphene standing almost vertically on the substrate. Due to the large surface area of vertical nanographene network, CNWs draw attention as platform for electrochemical sensing, biosensing and energy conversion applications. In this work, CNWs were grown on nickel substrate using inductively coupled plasma with methane/Ar mixture. After the CNW growth, the surface of CNWs was oxidized using Ar atmospheric pressure plasma to obtain super-hydrophilic surface. For the biosensing application, the surface of CNWs was decorated with platinum (Pt) nanoparticles by the reduction of hydrogen hexachloroplatinate (IV) solution. The resultant Pt particle size was estimated to be 3-4 nm. From the XPS analysis, pure Pt existed without being oxidized on the CNW surface. Electrochemical surface area of the Pt catalyst was evaluated by cyclic voltammetry. Pt-decorated CNWs will be used as an electrode for electrochemical glutamate biosensing. L-glutamate is one of the most important in the mammalian central nervous system, playing a vital role in many physiological processes. Nanoplatform based on vertical nanographene offers great promise for providing a new class of nanostructured electrodes for electrochemical sensing.

  4. Simulation of Discharge Production in a Water Vapour Layer on an Electrode

    Science.gov (United States)

    Karim, Mohammad; Evans, Benjamin; Asimakoulas, Leonidas; Stalder, Kenneth; Field, Thomas; Graham, Bill; Murakami, Tomoyuki

    2016-09-01

    Electrical discharges in water are receiving increasing attention because of chemical, environmental and biomedical applications.The work to be presented focuses on plasmas created directly in high conductivity water, saline solution. Here the plasma is produced at low voltage ( 200V) and is clearly associated with an initial vapour layer on the electrode surface that isolates the electrode from the liquid. In a previous paper a finite element multi-physics program, incorporating all relevant electrical and thermal properties of the solution was shown to reproduce the experimentally observed pre-plasma vapour layer behaviour. The results of a simulation of the plasma production in vapour layers of the same size and shape as predicted in will be presented, At present inert gas fills the ``vapour layer''. However this produces spatial distributions of the electron parameters that are consistent with the electric fields predicted in the original simulations. The water plasma simulation recently developed by Murakami is currently being included. It is anticipated that results of the coupled codes, showing the temporal and 2-D spatial development of the vapour and plasma, will be presented.

  5. Capillary microextraction: A new method for sampling methamphetamine vapour.

    Science.gov (United States)

    Nair, M V; Miskelly, G M

    2016-11-01

    Clandestine laboratories pose a serious health risk to first responders, investigators, decontamination companies, and the public who may be inadvertently exposed to methamphetamine and other chemicals used in its manufacture. Therefore there is an urgent need for reliable methods to detect and measure methamphetamine at such sites. The most common method for determining methamphetamine contamination at former clandestine laboratory sites is selected surface wipe sampling, followed by analysis with gas chromatography-mass spectrometry (GC-MS). We are investigating the use of sampling for methamphetamine vapour to complement such wipe sampling. In this study, we report the use of capillary microextraction (CME) devices for sampling airborne methamphetamine, and compare their sampling efficiency with a previously reported dynamic SPME method. The CME devices consisted of PDMS-coated glass filter strips inside a glass tube. The devices were used to dynamically sample methamphetamine vapour in the range of 0.42-4.2μgm(-3), generated by a custom-built vapour dosing system, for 1-15min, and methamphetamine was analysed using a GC-MS fitted with a ChromatoProbe thermal desorption unit. The devices showed good reproducibility (RSDsampling times and peak area, which can be utilised for calibration. Under identical sampling conditions, the CME devices were approximately 30 times more sensitive than the dynamic SPME method. The CME devices could be stored for up to 3days after sampling prior to analysis. Consecutive sampling of methamphetamine and its isotopic substitute, d-9 methamphetamine showed no competitive displacement. This suggests that CME devices, pre-loaded with an internal standard, could be a feasible method for sampling airborne methamphetamine at former clandestine laboratories. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

  6. The 2009 stratospheric major warming described from synergistic use of BASCOE water vapour analyses and MLS observations

    Directory of Open Access Journals (Sweden)

    W. A. Lahoz

    2010-10-01

    Full Text Available The record–breaking major stratospheric warming of northern winter 2009 (January–February is studied using BASCOE (Belgian Assimilation System for Chemical ObsErvation stratospheric water vapour analyses and MLS (Microwave Limb Sounder water vapour observations, together with meteorological data from the European Centre for Medium-Range Weather Forecasts (ECMWF and potential vorticity derived from ECMWF meteorological data. We focus on the interaction between the cyclonic wintertime stratospheric polar vortex and subsidiary anticyclonic stratospheric circulations during the build-up, peak and aftermath of the major warming. We show dynamical consistency between the water vapour analysed fields, and the meteorological and PV fields. New results include the analysis of water vapour during the major warming and demonstration of the benefit of assimilating MLS satellite data into the BASCOE model.

  7. Developments in vapour cloud explosion blast modeling

    NARCIS (Netherlands)

    Mercx, W.P.M.; Berg, A.C. van den; Hayhurst, C.J.; Robertson, N.J.; Moran, K.C.

    2000-01-01

    TNT Equivalency methods are widely used for vapour cloud explosion blast modeling. Presently, however, other types of models are available which do not have the fundamental objections TNT Equivalency models have. TNO Multi-Energy method is increasingly accepted as a more reasonable alternative to be

  8. Water vapour loss measurements on human skin.

    NARCIS (Netherlands)

    Valk, Petrus Gerardus Maria van der

    1984-01-01

    In this thesis, the results of a series of investigations into the barrier function of human skin are presented. In these investigations, the barrier function was assessed by water vapour loss measurements of the skin using a method based on gradient estimation.... Zie: Summary and conclusions

  9. The experiment on the saturation polarization of Rb vapour

    Institute of Scientific and Technical Information of China (English)

    Huang Xiang-You; You Pei-Lin; Du Wei-Min

    2004-01-01

    @@ A cylindrical capacitor containing rubidium vapour is made. The capacitance of it at. different voltages is measured under a certain Rb vapour pressure. The experimental C-V curve shows that the saturation polarization of Rb vapour is easily observed. The experiment further supports the idea that the Rb atom has a large permanent electric dipole moment.

  10. Synthesis of carbon nanotubes by plasma-enhanced CVD process: gas phase study of synthesis conditions

    OpenAIRE

    Guláš, Michal; Cojocaru, Costel Sorin; Fleaca, Claudiu; Farhat, Samir; Veis, Pavel; Le Normand, Francois

    2008-01-01

    International audience; To support experimental investigations, a model based on ChemkinTM software was used to simulate gas phase and surface chemistry during plasma-enhanced catalytic CVD of carbon nanotubes. According to these calculations, gas phase composition, etching process and growth rates are calculated. The role of several carbon species, hydrocarbon molecules and ions in the growth mechanism of carbon nanotubes is presented in this study. Study of different conditions of gas phase ...

  11. Synthesis of carbon nanbotubes by plasma-enhanced CVD process: gas phase study of synthesis conditions

    Science.gov (United States)

    Guláš, M.; Cojocaru, C. S.; Fleaca, C. T.; Farhat, S.; Veis, P.; Le Normand, F.

    2008-09-01

    To support experimental investigations, a model based on Chemkin^TM software was used to simulate gas phase and surface chemistry during plasma-enhanced catalytic CVD of carbon nanotubes. According to these calculations, gas phase composition, etching process and growth rates are calculated. The role of several carbon species, hydrocarbon molecules and ions in the growth mechanism of carbon nanotubes is presented in this study. Study of different conditions of gas phase activation sources and pressure is performed.

  12. Simulation of the isotopic composition of stratospheric water vapour - Part 2: Investigation of HDO / H2O variations

    Science.gov (United States)

    Eichinger, R.; Jöckel, P.; Lossow, S.

    2015-06-01

    Studying the isotopic composition of water vapour in the lower stratosphere can reveal the driving mechanisms of changes in the stratospheric water vapour budget and therefore help to explain the trends and variations of stratospheric water vapour during recent decades. We equipped a global chemistry climate model with a description of the water isotopologue HDO, comprising its physical and chemical fractionation effects throughout the hydrological cycle. We use this model to improve our understanding of the processes which determine the patterns in the stratospheric water isotope composition and in the water vapour budget itself. The link between the water vapour budget and its isotopic composition in the tropical stratosphere is presented through their correlation in a simulated 21-year time series. The two quantities depend on the same processes; however, they are influenced with different strengths. A sensitivity experiment shows that fractionation effects during the oxidation of methane have a damping effect on the stratospheric tape recorder signal in the water isotope ratio. Moreover, the chemically produced high water isotope ratios overshadow the tape recorder in the upper stratosphere. Investigating the origin of the boreal-summer signal of isotopically enriched water vapour reveals that in-mixing of old stratospheric air from the extratropics and the intrusion of tropospheric water vapour into the stratosphere complement each other in order to create the stratospheric isotope ratio tape recorder signal. For this, the effect of ice lofting in monsoon systems is shown to play a crucial role. Furthermore, we describe a possible pathway of isotopically enriched water vapour through the tropopause into the tropical stratosphere.

  13. Graphene composites containing chemically bonded metal oxides

    Indian Academy of Sciences (India)

    K Pramoda; S Suresh; H S S Ramakrishna Matte; A Govindaraj

    2013-08-01

    Composites of graphene involving chemically bonded nano films of metal oxides have been prepared by reacting graphene containing surface oxygen functionalities with metal halide vapours followed by exposure to water vapour. The composites have been characterized by electron microscopy, atomic force microscopy and other techniques. Magnetite particles chemically bonded to graphene dispersible in various solvents have been prepared and they exhibit fairly high magnetization.

  14. Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition

    Science.gov (United States)

    Park, Hamin; Kim, Tae Keun; Cho, Sung Woo; Jang, Hong Seok; Lee, Sang Ick; Choi, Sung-Yool

    2017-01-01

    Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray diffraction. The film composition studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy corresponded to a B:N stoichiometric ratio close to 1:1, and the band-gap value (5.65 eV) obtained by electron energy loss spectroscopy was consistent with the dielectric properties. The h-BN-containing capacitors were characterized by highly uniform properties, a reasonable dielectric constant (3), and low leakage current density, while graphene on h-BN substrates exhibited enhanced electrical performance such as the high carrier mobility and neutral Dirac voltage, which resulted from the low density of charged impurities on the h-BN surface.

  15. Electron collisions by metal atom vapours

    Energy Technology Data Exchange (ETDEWEB)

    Marinkovic, B.P. [Institute of Physics, P.O. Box 68, 11080, Belgrade (Serbia)]. E-mail: bratislav.marinkovic@phy.bg.ac.yu; Pejcev, V. [Institute of Physics, P.O. Box 68, 11080, Belgrade (Serbia); Faculty of Natural Sciences, University of Kragujevac (Serbia); Filipovic, D.M. [Institute of Physics, P.O. Box 68, 11080, Belgrade (Serbia); Faculty of Physics, University of Belgrade, P.O. Box 368, 11001 Belgrade (Serbia); Sevic, D. [Institute of Physics, P.O. Box 68, 11080, Belgrade (Serbia); Milisavljevic, S. [Institute of Physics, P.O. Box 68, 11080, Belgrade (Serbia); Predojevic, B. [Institute of Physics, P.O. Box 68, 11080, Belgrade (Serbia); Faculty of Natural Sciences, University of Banja Luka, Republic of Srpska (Bosnia and Herzegowina)

    2007-03-15

    Differential cross sections (DCS) for the elastic electron scattering and electron excitation of metal atom vapours are presented and discussed. Absolute scale was obtained by normalization procedure where generalized oscillator strengths were fitted to terminate at forward scattering function which leads to optical oscillator strength at zero momentum transfer. DCSs are compared with other available experimental and theoretical results and their importance for our understanding of basic electron atom interactions is pointed out.

  16. Interactions of fission product vapours with aerosols

    Energy Technology Data Exchange (ETDEWEB)

    Benson, C.G.; Newland, M.S. [AEA Technology, Winfrith (United Kingdom)

    1996-12-01

    Reactions between structural and reactor materials aerosols and fission product vapours released during a severe accident in a light water reactor (LWR) will influence the magnitude of the radiological source term ultimately released to the environment. The interaction of cadmium aerosol with iodine vapour at different temperatures has been examined in a programme of experiments designed to characterise the kinetics of the system. Laser induced fluorescence (LIF) is a technique that is particularly amenable to the study of systems involving elemental iodine because of the high intensity of the fluorescence lines. Therefore this technique was used in the experiments to measure the decrease in the concentration of iodine vapour as the reaction with cadmium proceeded. Experiments were conducted over the range of temperatures (20-350{sup o}C), using calibrated iodine vapour and cadmium aerosol generators that gave well-quantified sources. The LIF results provided information on the kinetics of the process, whilst examination of filter samples gave data on the composition and morphology of the aerosol particles that were formed. The results showed that the reaction of cadmium with iodine was relatively fast, giving reaction half-lives of approximately 0.3 s. This suggests that the assumption used by primary circuit codes such as VICTORIA that reaction rates are mass-transfer limited, is justified for the cadmium-iodine reaction. The reaction was first order with respect to both cadmium and iodine, and was assigned as pseudo second order overall. However, there appeared to be a dependence of aerosol surface area on the overall rate constant, making the precise order of the reaction difficult to assign. The relatively high volatility of the cadmium iodide formed in the reaction played an important role in determining the composition of the particles. (author) 23 figs., 7 tabs., 22 refs.

  17. Photoinduced Charge Transfer at Metal Oxide/Oxide Interfaces Prepared with Plasma Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Kaur, Manpuneet

    LiNbO3 and ZnO have shown great potential for photochemical surface reactions and specific photocatalytic processes. However, the efficiency of LiNbO3 is limited due to recombination or back reactions and ZnO exhibits a chemical instability in a liquid cell. In this dissertation, both materials were coated with precise thickness of metal oxide layers to passivate the surfaces and to enhance their photocatalytic efficiency. LiNbO 3 was coated with plasma enhanced atomic layer deposited (PEALD) ZnO and Al2O3, and molecular beam deposited TiO2 and VO2. On the other hand, PEALD ZnO and single crystal ZnO were passivated with PEALD SiO2 and Al2O3. Metal oxide/LiNbO3 heterostructures were immersed in aqueous AgNO3 solutions and illuminated with ultraviolet (UV) light to form Ag nanoparticle patterns. Alternatively, Al2O3 and SiO2/ZnO heterostructures were immersed in K3PO 4 buffer solutions and studied for photoelectrochemical reactions. A fundamental aspect of the heterostructures is the band alignment and band bending, which was deduced from in situ photoemission measurements. This research has provided insight to three aspects of the heterostructures. First, the band alignment at the interface of metal oxides/LiNbO 3, and Al2O3 or SiO2/ZnO were used to explain the possible charge transfer processes and the direction of carrier flow in the heterostructures. Second, the effect of metal oxide coatings on the LiNbO3 with different internal carrier concentrations was related to the surface photochemical reactions. Third is the surface passivation and degradation mechanism of Al2O 3 and SiO2 on ZnO was established. The heterostructures were characterized after stability tests using atomic force microscopy (AFM), scanning electron microscopy (SEM), and cross-section transmission electron microscopy (TEM). The results indicate that limited thicknesses of ZnO or TiO2 on polarity patterned LiNbO3 (PPLN) enhances the Ag+ photoinduced reduction process. ZnO seems more efficient

  18. Metal Vapour Lasers: Physics, Engineering and Applications

    Science.gov (United States)

    Little, Christopher E.

    1999-03-01

    Metal Vapour Lasers Christopher E. Little University of St Andrews, St Andrews, Scotland Since the first successful demonstration of a metal vapour laser (MVL) in 1962, this class of laser has become widely used in a broad range of fields including precision materials processing, isotope separation and medicine. The MVLs that are used today have a range of impressive characteristics that are not readily available using other technologies. In particular, the combination of high average output powers, pulse recurrence frequencies and beam quality available from green/yellow Cu vapour lasers (CVLs) and Cu bromide lasers, coupled with the high-quality, multiwatt ultraviolet (265-289 nm) radiation that can be produced using simple nonlinear optical techniques, means that Cu lasers will continue to be important for many years. Metal Vapour Lasers covers all the most commercially important and scientifically interesting pulsed and continuous wave (CW) gas-discharge MVLs, and includes device histories, operating characteristics, engineering, kinetics, commercial exploitation and applications. Short descriptions of gas discharges and excitation techniques make this volume self-consistent. A comprehensive bibliography is also provided. The greater part of this book is devoted to CVLs and their variants, including new sealed-off, high-power 'kinetically enhanced' CVLs and Cu bromide lasers. However, many other self-terminating MVLs are also discussed, including the red AuVL, green/infrared MnVL and infrared BaVL. Pulsed, high-gain, high average power lasers in the UV/violet (373.7, 430.5 nm) spectral regions are represented by Sr¯+ and Ca¯+ discharge-afterglow recombination lasers. The most commercially successful of the MVLs - the CW, UV/blue cataphoretic He-Cd¯+ ion laser - is described. Hollow cathode lasers are represented in two guises: 'white light' (blue/green/red) He-Cd¯+ ion lasers and UV/infrared Ne/He-Cu¯+ ion lasers. This unique volume is an

  19. [Qualitative Determination of Organic Vapour Using Violet and Visible Spectrum].

    Science.gov (United States)

    Jiang, Bo; Hu, Wen-zhong; Liu, Chang-jian; Zheng, Wei; Qi, Xiao-hui; Jiang, Ai-li; Wang, Yan-ying

    2015-12-01

    Vapours of organic matters were determined qualitatively employed with ultraviolet-visible absorption spectroscopy. Vapours of organic matters were detected using ultraviolet-visible spectrophotometer employing polyethylene film as medium, the ultraviolet and visible absorption spectra of vegetable oil vapours of soybean oil, sunflower seed oil, peanut oil, rapeseed oil, sesame oil, cotton seed oil, tung tree seed oil, and organic compound vapours of acetone, ethyl acetate, 95% ethanol, glacial acetic acid were obtained. Experimental results showed that spectra of the vegetable oil vapour and the organic compound vapour could be obtained commendably, since ultra violet and visible spectrum of polyethylene film could be deducted by spectrograph zero setting. Different kinds of vegetable oils could been distinguished commendably in the spectra since the λ(max), λ(min), number of absorption peak, position, inflection point in the ultra violet and visible spectra obtained from the vapours of the vegetable oils were all inconsistent, and the vapours of organic compounds were also determined perfectly. The method had a good reproducibility, the ultraviolet and visible absorption spectra of the vapours of sunflower seed oil in 10 times determination were absolutely the same. The experimental result indicated that polyethylene film as a kind of medium could be used for qualitative analysis of ultraviolet and visible absorption spectroscopy. The method for determination of the vapours of the vegetable oils and organic compounds had the peculiarities of fast speed analysis, well reproducibility, accuracy and reliability and low cost, and so on. Ultraviolet and visible absorption spectrum of organic vapour could provide feature information of material vapour and structural information of organic compound, and provide a novel test method for identifying vapour of compound and organic matter.

  20. Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition

    KAUST Repository

    Zhao, Chao

    2013-09-01

    The growth of TiO2 films by plasma enhanced atomic layer deposition using Star-Ti as a precursor has been systematically studied. The conversion from amorphous to crystalline TiO2 was observed either during high temperature growth or annealing process of the films. The refractive index and bandgap of TiO2 films changed with the growth and annealing temperatures. The optimization of the annealing conditions for TiO2 films was also done by morphology and density studies. © 2013 Elsevier B.V. All rights reserved.

  1. Vapour Recoil Effect on a Vapour-Liquid System with a Deformable Interface

    Institute of Scientific and Technical Information of China (English)

    LIU Rong; LIU Qiu-Sheng

    2006-01-01

    @@ A new two-sided model of vapour-Iiquid layer system with a deformable interface is proposed. In this model,the vapour recoil effect on the Marangoni-Bénard instability of a thin evaporating liquid layer can be examined only when the interface deflexion is considered. The instability of a liquid layer undergoing steady evaporation induced by the coupling of vapour recoil effect and the Marangoni effect is analysed using a linear stability theory.We modify and develop the Chebyshev-Tau method to solve the instability problem of a deformable interface system by introducing a new equation at interface boundary. New instability behaviour of the system has been found and the self-amplification mechanism between the evaporation flux and the interface deflexion is discussed.

  2. Characterization of TiO{sub 2} thin films obtained by metal-organic chemical vapour deposition; Caracterizacao de filmes finos de TiO{sub 2} obtidos por deposicao quimica em fase vapor

    Energy Technology Data Exchange (ETDEWEB)

    Carriel, Rodrigo Crociati

    2015-07-01

    Titanium dioxide (TiO{sub 2}) thin films were grown on silicon substrate (100) by MOCVD process (chemical deposition of organometallic vapor phase). The films were grown at 400, 500, 600 and 700 ° C in a conventional horizontal equipment. Titanium tetraisopropoxide was used as source of both oxygen and titanium. Nitrogen was used as carrier and purge gas. X-ray diffraction technique was used for the characterization of the crystalline structure. Scanning electron microscopy with field emission gun was used to evaluate the morphology and thickness of the films. The films grown at 400 and 500°C presented anatase phase. The film grown at 600ºC presented rutile besides anatase phase, while the film grown at 700°C showed, in addition to anatase and rutile, brookite phase. In order to evaluate the electrochemical behavior of the films cyclic voltammetry technique was used. The tests revealed that the TiO2 films formed exclusively by the anatase phase exhibit strong capacitive character. The anodic current peak is directly proportional to the square root of the scanning rate for films grown at 500ºC, suggesting that linear diffusion is the predominant mechanism of cations transport. It was observed that in the film grown during 60 minutes the Na+ ions intercalation and deintercalation easily. The films grown in the other conditions did not present the anodic current peak, although charge was accumulated in the film. (author)

  3. Formation and yield of multi-walled carbon nanotubes synthesized via chemical vapour deposition routes using different metal-based catalysts of FeCoNiAl, CoNiAl and FeNiAl-LDH.

    Science.gov (United States)

    Hussein, Mohd Zobir; Jaafar, Adila Mohamad; Yahaya, Asmah Hj; Masarudin, Mas Jaffri; Zainal, Zulkarnain

    2014-11-05

    Multi-walled carbon nanotubes (MWCNTs) were prepared via chemical vapor deposition (CVD) using a series of different catalysts, derived from FeCoNiAl, CoNiAl and FeNiAl layered double hydroxides (LDHs). Catalyst-active particles were obtained by calcination of LDHs at 800 °C for 5 h. Nitrogen and hexane were used as the carrier gas and carbon source respectively, for preparation of MWCNTs using CVD methods at 800 °C. MWCNTs were allowed to grow for 30 min on the catalyst spread on an alumina boat in a quartz tube. The materials were subsequently characterized through X-ray diffraction, Fourier transform infrared spectroscopy, surface area analysis, field emission scanning electron microscopy and transmission electron microscopy. It was determined that size and yield of MWCNTs varied depending on the type of LDH catalyst precursor that is used during synthesis. MWCNTs obtained using CoNiAl-LDH as the catalyst precursor showed smaller diameter and higher yield compared to FeCoNiAl and FeNiAl LDHs.

  4. Formation and Yield of Multi-Walled Carbon Nanotubes Synthesized via Chemical Vapour Deposition Routes Using Different Metal-Based Catalysts of FeCoNiAl, CoNiAl and FeNiAl-LDH

    Directory of Open Access Journals (Sweden)

    Mohd Zobir Hussein

    2014-11-01

    Full Text Available Multi-walled carbon nanotubes (MWCNTs were prepared via chemical vapor deposition (CVD using a series of different catalysts, derived from FeCoNiAl, CoNiAl and FeNiAl layered double hydroxides (LDHs. Catalyst-active particles were obtained by calcination of LDHs at 800 °C for 5 h. Nitrogen and hexane were used as the carrier gas and carbon source respectively, for preparation of MWCNTs using CVD methods at 800 °C. MWCNTs were allowed to grow for 30 min on the catalyst spread on an alumina boat in a quartz tube. The materials were subsequently characterized through X-ray diffraction, Fourier transform infrared spectroscopy, surface area analysis, field emission scanning electron microscopy and transmission electron microscopy. It was determined that size and yield of MWCNTs varied depending on the type of LDH catalyst precursor that is used during synthesis. MWCNTs obtained using CoNiAl-LDH as the catalyst precursor showed smaller diameter and higher yield compared to FeCoNiAl and FeNiAl LDHs.

  5. Chlorine-free plasma-based vapour growth of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Siche, D.; Kachel, K.; Zwierz, R.; Golka, S.; Sudhoff, P.; Gogova, D. [Leibniz-Institut fuer Kristallzuechtung, Berlin (Germany); Vodopyanov, A.; Izotov, I.; Sennikov, P.; Golubev, S. [Institute of Applied Physics, Nizhny Novgorod (Russian Federation); Franke, K.P. [Institute fuer Umwelttechnologien GmbH, Berlin (Germany)

    2012-03-15

    In pure physical vapour transport process for GaN growth, the liquid Ga source has to be kept at temperatures about 1300-1400 C to provide sufficient Ga vapour pressure for reasonably large growth rates. The growth temperature needs to be slightly lower to prevent droplet formation in the Ga vapour. At such high temperatures, however, the early ammonia decomposition prevents the favorable growth with reactive nitrogen in excess. The vapour processes under development in this study aim at overcoming the drawbacks of the reaction of physically or chemically transported Ga and ammonia. For this purpose, the reactive nitrogen will be supplied by plasma excitation of N{sub 2}. First, the results on ammonia-based GaN growth and their disadvantages are discussed. Then, the challenges in designing of a new type of plasma sources (a microwave and a dielectric barrier discharge) and the first experimental results on the ammonia-free process development are presented. The microwave approach seems to be very promising in terms of GaN growth. It has higher growth rates than the dielectric barrier discharge method and therefore it is more cost-effective. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Need for Vapour-Liquid Equilibrium Data Generation of Systems Involving Green Solvents

    Directory of Open Access Journals (Sweden)

    V. M. Parsana

    2015-06-01

    Full Text Available Much has been said and written over the years regarding green chemistry concept and use of green solvents. The green solvents can potentially replace the traditional or classical solvents in order to reduce the environment footprint or their harmful impact on human being and/or environment. Vapour-liquid equilibrium data is indispensable for the design of distillation columns for separation processes which account for a large percentage of total costs in a typical chemical plant. Though extensive approach has been made for the replacement of traditional solvents, but not enough consideration been given for vapour-liquid equilibrium data, required for designing separation processes in case of replacement with green solvents. So this paper aims at encouraging vapour-liquid equilibrium data generation for design of efficient separation for binary systems involving ethereal green solvents such as cyclopentyl methyl ether (CPME and 2-methyl tetrahydrofuran (2-MeTHF. A brief review and outline of procedure for generating vapour-liquid equilibrium data is presented here.

  7. Ultrafast vapourization dynamics of laser-activated polymeric microcapsules

    Science.gov (United States)

    Lajoinie, Guillaume; Gelderblom, Erik; Chlon, Ceciel; Böhmer, Marcel; Steenbergen, Wiendelt; de Jong, Nico; Manohar, Srirang; Versluis, Michel

    2014-04-01

    Precision control of vapourization, both in space and time, has many potential applications; however, the physical mechanisms underlying controlled boiling are not well understood. The reason is the combined microscopic length scales and ultrashort timescales associated with the initiation and subsequent dynamical behaviour of the vapour bubbles formed. Here we study the nanoseconds vapour bubble dynamics of laser-heated single oil-filled microcapsules using coupled optical and acoustic detection. Pulsed laser excitation leads to vapour formation and collapse, and a simple physical model captures the observed radial dynamics and resulting acoustic pressures. Continuous wave laser excitation leads to a sequence of vapourization/condensation cycles, the result of absorbing microcapsule fragments moving in and out of the laser beam. A model incorporating thermal diffusion from the capsule shell into the oil core and surrounding water reveals the mechanisms behind the onset of vapourization. Excellent agreement is observed between the modelled dynamics and experiment.

  8. Modelling the budget of middle atmospheric water vapour isotopes

    Directory of Open Access Journals (Sweden)

    A. Zahn

    2006-01-01

    Full Text Available A one-dimensional chemistry model is applied to study the stable hydrogen (D and stable oxygen isotope (17O, 18O composition of water vapour in stratosphere and mesosphere. In the troposphere, this isotope composition is determined by 'physical'' fractionation effects, that are phase changes (e.g. during cloud formation, diffusion processes (e.g. during evaporation from the ocean, and mixing of air masses. Due to these processes water vapour entering the stratosphere first shows isotope depletions in D/H relative to ocean water, which are ~5 times of those in 18O/16O, and secondly is mass-dependently fractionated (MDF, i.e. changes in the isotope ratio 17O/16O are ~0.52 times of those of 18O/16O. In contrast, in the stratosphere and mesosphere 'chemical'' fractionation mechanisms, that are the production of HO due to the oxidation of methane, re-cycling of H2O via the HOx family, and isotope exchange reactions considerably enhance the isotope ratios in the water vapour imported from the troposphere. The model reasonably predicts overall enhancements of the stable isotope ratios in H2O by up to ~25% for D/H, ~8.5% for 17O/16O, and ~14% for 18O/16O in the mesosphere relative to the tropopause values. The 17O/16O and 18O/16O ratios in H2O are shown to be a measure of the relative fractions of HOx that receive the O atom either from the reservoirs O2 or O3. Throughout the middle atmosphere, MDF O2 is the major donator of oxygen atoms incorporated in OH and HO2 and thus in H2O. In the stratosphere the known mass-independent fractionation (MIF signal in O3 is in a first step transferred to the NOx family and only in a second step to HOx and H2O. In contrast to CO2, O(1D only plays a minor role in this MIF transfer. The major uncertainty in our calculation arises from poorly quantified isotope exchange reaction rate coefficients and kinetic isotope fractionation factors.

  9. Need for Vapour-Liquid Equilibrium Data Generation of Systems Involving Green Solvents

    OpenAIRE

    V. M. Parsana; S. P. Parikh

    2015-01-01

    Much has been said and written over the years regarding green chemistry concept and use of green solvents. The green solvents can potentially replace the traditional or classical solvents in order to reduce the environment footprint or their harmful impact on human being and/or environment. Vapour-liquid equilibrium data is indispensable for the design of distillation columns for separation processes which account for a large percentage of total costs in a typical chemical plant. ...

  10. Variability of water vapour in the Arctic stratosphere

    Science.gov (United States)

    Thölix, Laura; Backman, Leif; Kivi, Rigel; Karpechko, Alexey Yu.

    2016-04-01

    This study evaluates the stratospheric water vapour distribution and variability in the Arctic. A FinROSE chemistry transport model simulation covering the years 1990-2014 is compared to observations (satellite and frost point hygrometer soundings), and the sources of stratospheric water vapour are studied. In the simulations, the Arctic water vapour shows decadal variability with a magnitude of 0.8 ppm. Both observations and the simulations show an increase in the water vapour concentration in the Arctic stratosphere after the year 2006, but around 2012 the concentration started to decrease. Model calculations suggest that this increase in water vapour is mostly explained by transport-related processes, while the photochemically produced water vapour plays a relatively smaller role. The increase in water vapour in the presence of the low winter temperatures in the Arctic stratosphere led to more frequent occurrence of ice polar stratospheric clouds (PSCs) in the Arctic vortex. We perform a case study of ice PSC formation focusing on January 2010 when the polar vortex was unusually cold and allowed large-scale formation of PSCs. At the same time a large-scale persistent dehydration was observed. Ice PSCs and dehydration observed at Sodankylä with accurate water vapour soundings in January and February 2010 during the LAPBIAT (Lapland Atmosphere-Biosphere facility) atmospheric measurement campaign were well reproduced by the model. In particular, both the observed and simulated decrease in water vapour in the dehydration layer was up to 1.5 ppm.

  11. Improvement of multicrystalline silicon wafer solar cells by post-fabrication wet-chemical etching in phosphoric acid

    Indian Academy of Sciences (India)

    A Mefoued; M Fathi; J Bhatt; A Messaoud; B Palahouane; N Benrekaa

    2011-12-01

    In this study, we have improved electrical characteristics such as the efficiency () and the fill factor (FF) of finished multicrystalline silicon (-Si) solar cells by using a new chemical treatment with a hot phosphoric (H3PO4) acidic solution. These -Si solar cells were made by a standard industrial process with screen-printed contacts and a silicon nitride (SiN) antireflection coating. We have deposited SiN thin layer (80 nm) on -type -Si substrate by the mean of plasma enhanced chemical vapour deposition (PECVD) technique. The reactive gases used as precursors inside PECVD chamber are a mixture of silane (SiH4) and ammonia (NH3) at a temperature of 380°C. The developed H3PO4 chemical surface treatment has improved from 5.4 to 7.7% and FF from 50.4 to 70.8%, this means a relative increase of up to 40% from the initial values of and FF. In order to explain these improvements, physical (AFM, EDX), chemical (FTIR) and optical (spectrophotometer) analyses were done.

  12. Water vapour measurements during POLINAT 1

    Energy Technology Data Exchange (ETDEWEB)

    Ovarlez, J.; Ovarlez, H. [Centre National de la Recherche Scientifique, 91 - Palaiseau (France). Lab. de Meteorologie Dynamique

    1997-12-31

    The POLINAT (POLlution from aircraft emissions In the North ATlantic flight corridor)1 experiment has been performed within the framework of the Environment Programme of the Commission of the European Community. It was devoted to the study of the pollution from aircraft in the North Atlantic flight corridor, in order to investigate the impact of pollutants emitted by aircraft on the concentrations of ozone and other trace gases in the upper troposphere and lower stratosphere. For that experiment the water vapour content was measured with a frost-point hygrometer on board of the DLR Falcon research aircraft. This instrument is described, and some selected results are given. (author) 19 refs.

  13. A conservative vapour intrusion screening model of oxygen-limited hydrocarbon vapour biodegradation accounting for building footprint size

    Science.gov (United States)

    Knight, John H.; Davis, Gregory B.

    2013-12-01

    Petroleum hydrocarbon vapours pose a reduced risk to indoor air due to biodegradation processes where oxygen is available in the subsurface or below built structures. However, no previous assessment has been available to show the effects of a building footprint (slab size) on oxygen-limited hydrocarbon vapour biodegradation and the potential for oxygen to be present beneath the entire sub-slab region of a building. Here we provide a new, conservative and conceptually simple vapour screening model which links oxygen and hydrocarbon vapour transport and biodegradation in the vicinity and beneath an impervious slab. This defines when vapour risk is insignificant, or conversely when there is potential for vapour to contact the sub-slab of a building. The solution involves complex mathematics to determine the position of an unknown boundary interface between oxygen diffusing in from the ground surface and vapours diffusing upwards from a subsurface vapour source, but the mathematics reduces to a simple relationship between the vapour source concentration and the ratio of the half slab width and depth to the vapour source. Data from known field investigations are shown to be consistent with the model predictions. Examples of 'acceptable' slab sizes for vapour source depths and strengths are given. The predictions are conservative as an estimator of when petroleum hydrocarbon vapours might come in contact with a slab-on-ground building since additional sources of oxygen due to advective flow or diffusion through the slab are ignored. As such the model can be used for screening sites for further investigation.

  14. Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers

    Science.gov (United States)

    Karbasian, Golnaz

    The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performance and reliability of the circuits, minimization of the energy consumption in logic devices is now the center of attention. According to the International Technology Roadmaps for Semiconductors (ITRS), single electron transistors (SETs) hold the promise of achieving the lowest power of any known logic device, as low as 1x10-18 J per switching event. Moreover, SETs are the most sensitive electrometers to date, and are capable of detecting a fraction of an electron charge. Despite their low power consumption and high sensitivity for charge detection, room temperature operation of these devices is quite challenging mainly due to lithographical constraints in fabricating structures with the required dimensions of less than 10 nm. Silicon based SETs have been reported to operate at room temperature. However, they all suffer from significant variation in batch-to-batch performance, low fabrication yield, and temperature-dependent tunnel barrier height. In this project, we explored the fabrication of SETs featuring metal-insulator-metal (MIM) tunnel junctions. While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Therefore, metal SETs are potentially more predictable in behavior, making them easier to incorporate into circuits, and easier to check against theoretical models. Here, the proposed fabrication method takes advantage of unique properties of chemical mechanical polishing (CMP) and plasma enhanced atomic layer deposition (PEALD). Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam

  15. Properties of meso-Erythritol; phase state, accommodation coefficient and saturation vapour pressure

    Science.gov (United States)

    Emanuelsson, Eva; Tschiskale, Morten; Bilde, Merete

    2016-04-01

    Introduction Saturation vapour pressure and the associated temperature dependence (enthalpy ΔH), are key parameters for improving predictive atmospheric models. Generally, the atmospheric aerosol community lack experimentally determined values of these properties for relevant organic aerosol compounds (Bilde et al., 2015). In this work we have studied the organic aerosol component meso-Erythritol. Methods Sub-micron airborne particles of meso-Erythritol were generated by nebulization from aqueous solution, dried, and a mono disperse fraction of the aerosol was selected using a differential mobility analyser. The particles were then allowed to evaporate in the ARAGORN (AaRhus Atmospheric Gas phase OR Nano particle) flow tube. It is a temperature controlled 3.5 m long stainless steel tube with an internal diameter of 0.026 m (Bilde et al., 2003, Zardini et al., 2010). Changes in particle size as function of evaporation time were determined using a scanning mobility particle sizer system. Physical properties like air flow, temperature, humidity and pressure were controlled and monitored on several places in the setup. The saturation vapour pressures were then inferred from the experimental results in the MATLAB® program AU_VaPCaP (Aarhus University_Vapour Pressure Calculation Program). Results Following evaporation, meso-Erythriol under some conditions showed a bimodal particle size distribution indicating the formation of particles of two different phase states. The issue of physical phase state, along with critical assumptions e.g. the accommodation coefficient in the calculations of saturation vapour pressures of atmospheric relevant compounds, will be discussed. Saturation vapour pressures from the organic compound meso-Erythritol will be presented at temperatures between 278 and 308 K, and results will be discussed in the context of atmospheric chemistry. References Bilde, M. et al., (2015), Chemical Reviews, 115 (10), 4115-4156. Bilde, M. et. al., (2003

  16. Is there a solar signal in lower stratospheric water vapour?

    Science.gov (United States)

    Schieferdecker, Tobias; Lossow, Stefan; Stiller, Gabriele; von Clarmann, Thomas

    2016-04-01

    A merged time series of stratospheric water vapour built from the Halogen Occultation Instrument (HALOE) and the Michelson Interferometer for Passive Atmospheric Sounding (MIPAS) data between 60 deg S and 60 deg N and 15 to 30 km, and covering the years 1992 to 2012, was analysed by multivariate linear regression, including an 11-year solar cycle proxy. Lower stratospheric water vapour was found to reveal a phase-shifted anti-correlation with the solar cycle, with lowest water vapour after solar maximum. The phase shift is composed of an inherent constant time lag of about 2 years and a second component following the stratospheric age of air. The amplitudes of the water vapour response are largest close to the tropical tropopause (up to 0.35 ppmv) and decrease with altitude and latitude. Including the solar cycle proxy in the regression results in linear trends of water vapour being negative over the full altitude/latitude range, while without the solar proxy, positive water vapour trends in the lower stratosphere were found. We conclude from these results that a solar signal seems to be generated at the tropical tropopause which is most likely imprinted on the stratospheric water vapour abundances and transported to higher altitudes and latitudes via the Brewer-Dobson circulation. Hence it is concluded that the tropical tropopause temperature at the final dehydration point of air may also be governed to some degree by the solar cycle. The negative water vapour trends obtained when considering the solar cycle impact on water vapour abundances can possibly solve the "water vapour conundrum" of increasing stratospheric water vapour abundances despite constant or even decreasing tropopause temperatures.

  17. Hot-filament chemical vapour deposition of diamond onto steel

    NARCIS (Netherlands)

    Buijnsters, Ivan

    2003-01-01

    The main goal of this project was to establish the feasibility of depositing well adhering polycrystalline diamond coatings on steel substrates. It is well known that the growth and adhesion of diamond layers directly onto steels is complicated by the high carbon solubility and the high thermal expa

  18. Hot-wire chemical vapour deposition of carbon nanotubes

    CSIR Research Space (South Africa)

    Cummings, FR

    2006-07-01

    Full Text Available and thermal conductivity, which have led to them being identified as possible components in a variety of applications such as reinforced composites, nano-scale electronic, electrochemical and power devices. Techniques used to synthesize CNTs include laser...

  19. Silicon dioxide mask by plasma enhanced atomic layer deposition in focused ion beam lithography

    Science.gov (United States)

    Liu, Zhengjun; Shah, Ali; Alasaarela, Tapani; Chekurov, Nikolai; Savin, Hele; Tittonen, Ilkka

    2017-02-01

    In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiO2 hard mask. The PEALD process greatly decreases the deposition temperature of the SiO2 hard mask. FIB Ga+ ion implantation on the deposited SiO2 layer increases the wet etch resistivity of the irradiated region. A programmed exposure in FIB followed by development in a wet etchant enables the precisely defined nanoscale patterning. The combination of FIB exposure parameters and the development time provides greater freedom for optimization. The developed process provides high pattern dimension accuracy over the tested range of 90–210 nm. Utilizing the SiO2 mask developed in this work, silicon nanopillars with 40 nm diameter were successfully fabricated with cryogenic deep reactive ion etching and the aspect ratio reached 16:1. The fabricated mask is suitable for sub-100 nm high aspect ratio silicon structure fabrication.

  20. TiN coating on wall of holes and stitches by pulsed DC plasma enhanced CVD

    Institute of Scientific and Technical Information of China (English)

    马胜利; 徐可为; 介万奇

    2003-01-01

    TiN coating samples with narrow-stitch or deep-hole of different sizes and real dies with complex shape were processed by a larger-scale pulsed plasma enhanced CVD(PECVD) reactor. Scanning electron microscopy, optical microscopy, Vicker's hardness and interfacial adhesion tests were conducted to find the relation between the microstructure and properties of TiN coating on a flat and an inner surface. The results indicate that the inner-wall of holes (d>2 mm) and inner surface of narrow-stitches (d>3 mm) can be coated with the aid of pulsed DC plasma in an industrial-scale reactor. The quality of coatings on different surfaces is almost the same. The coating was applied to aluminum extrusion mould, and the mould life was increased at least by one time.

  1. Beam-profile monitor using a sodium-vapour

    CERN Multimedia

    1972-01-01

    Beam-profile monitor using a sodium-vapour curtain at 45 degrees to the ISR beam in Ring I (sodium generator is in white cylinder just left of centre). Electrons produced by ionization of the sodium vapour give an image of the beam on a fluorescent screen that is observed by a TV camera (at upper right).

  2. Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Jhang, Pei-Ci; Lu, Chi-Pin; Shieh, Jung-Yu; Yang, Ling-Wu; Yang, Tahone; Chen, Kuang-Chao; Lu, Chih-Yuan

    2017-07-01

    An N-rich silicon nitride film, with a lower refractive index (RI) than the stoichiometric silicon nitride (RI = 2.01), was deposited by alternating the exposure of dichlorosilane (DCS, SiH2Cl2) and that of ammonia (NH3) in a plasma-enhanced atomic layer deposition (PEALD) process. In this process, the plasma ammonia was easily decomposed to reactive radicals by RF power activating so that the N-rich silicon nitride was easily formed by excited ammonia radicals. The growth kinetics of N-rich silicon nitride were examined at various deposition temperatures ranging from 400 °C to 630 °C; the activation energy (Ea) decreased as the deposition temperature decreased below 550 °C. N-rich silicon nitride film with a wide range of values of refractive index (RI) (RI = 1.86-2.00) was obtained by regulating the deposition temperature. At the optimal deposition temperature, the effects of RF power, NH3 flow rate and NH3 flow time were on the characteristics of the N-rich silicon nitride film were evaluated. The results thus reveal that the properties of the N-rich silicon nitride film that was formed by under plasma-enhanced atomic layer deposition (PEALD) are dominated by deposition temperature. In charge trap flash (CTF) study, an N-rich silicon nitride film was applied to MAONOS device as a charge-trapping layer. The films exhibit excellent electron trapping ability and favor a fresh cell data retention performance as the deposition temperature decreased.

  3. Influence of growth conditions on microstructure and defects in diamond coatings grown by microwave plasma enhanced CVD

    Indian Academy of Sciences (India)

    Kalyan Sundar Pal; Sandip Bysakh; Awadesh Kumar Mallik; Nandadulal Dandapat; Someswar Datta; Bichitra K Guha

    2015-06-01

    Diamond coatings were grown on SiO2/Si substrate under various process conditions by microwave plasma chemical vapour deposition (MPCVD) using CH4/H2 gas mixture. In this paper, we present a microstructural study to elucidate on the growth mechanism and evolution of defects, viz., strain, dislocations, stacking faults, twins and non-diamond impurities in diamond coatings grown under different process conditions. Transmission electron microscopy (TEM), X-ray diffraction (XRD) and Raman spectroscopy were used to characterize the diamond coatings. It has been shown that our new approach of prolonged substrate pre-treatment under hydrogen plasma yielded a new growth sequence that the SiO2 layer on the Si substrate was first reduced to yield Si layer of ∼150 nm thickness before diamond was allowed to grow under CH4–H2 plasma, created subsequently. It has also been shown that Si and O as impurity from the substrate hinders the initial diamond growth to yield non-diamond phases. It is being suggested that the crystal defects like twins, stacking faults, dislocations in the diamond grains and dislocations in the intermediate Si layer are generated due to the development of non-uniform stresses during diamond growth at high temperature.

  4. Effect of Water Vapour to Temperature Inside Sonoluminescing Bubble

    Institute of Scientific and Technical Information of China (English)

    安宇; 谢崇国; 应崇福

    2003-01-01

    Using the model based on the homo-pressure approximation, we explain why the maximum temperature is sensitive to the ambient temperature in the single bubble sonoluminescence. The numerical simulation shows that the maximum temperature inside a sonoluminescing bubble depends on how much water vapour evaporates or coagulates at the bubble wall during the bubble shrinking to its minimum size. While the amount of water vapour inside the bubble at the initial and the final state of the compression depends on the saturated water vapour pressure which is sensitive to the ambient temperature. The lower the saturated vapour pressure is, the higher the maximum temperature is. This may lead to more general conclusion that those liquids with lower saturated vapour pressure are more favourable for the single bubble sonoluminescence. We also compare those bubbles with different noble gases, the result shows that the maximum temperatures in the different gas bubbles are almost the same for those with the same ambient temperature.

  5. Localisation of an unknown number of land mines using a network of vapour detectors.

    Science.gov (United States)

    Chhadé, Hiba Haj; Abdallah, Fahed; Mougharbel, Imad; Gning, Amadou; Julier, Simon; Mihaylova, Lyudmila

    2014-11-06

    We consider the problem of localising an unknown number of land mines using concentration information provided by a wireless sensor network. A number of vapour sensors/detectors, deployed in the region of interest, are able to detect the concentration of the explosive vapours, emanating from buried land mines. The collected data is communicated to a fusion centre. Using a model for the transport of the explosive chemicals in the air, we determine the unknown number of sources using a Principal Component Analysis (PCA)-based technique. We also formulate the inverse problem of determining the positions and emission rates of the land mines using concentration measurements provided by the wireless sensor network. We present a solution for this problem based on a probabilistic Bayesian technique using a Markov chain Monte Carlo sampling scheme, and we compare it to the least squares optimisation approach. Experiments conducted on simulated data show the effectiveness of the proposed approach.

  6. Stabilization of Leidenfrost vapour layer by textured superhydrophobic surfaces.

    Science.gov (United States)

    Vakarelski, Ivan U; Patankar, Neelesh A; Marston, Jeremy O; Chan, Derek Y C; Thoroddsen, Sigurdur T

    2012-09-13

    In 1756, Leidenfrost observed that water drops skittered on a sufficiently hot skillet, owing to levitation by an evaporative vapour film. Such films are stable only when the hot surface is above a critical temperature, and are a central phenomenon in boiling. In this so-called Leidenfrost regime, the low thermal conductivity of the vapour layer inhibits heat transfer between the hot surface and the liquid. When the temperature of the cooling surface drops below the critical temperature, the vapour film collapses and the system enters a nucleate-boiling regime, which can result in vapour explosions that are particularly detrimental in certain contexts, such as in nuclear power plants. The presence of these vapour films can also reduce liquid-solid drag. Here we show how vapour film collapse can be completely suppressed at textured superhydrophobic surfaces. At a smooth hydrophobic surface, the vapour film still collapses on cooling, albeit at a reduced critical temperature, and the system switches explosively to nucleate boiling. In contrast, at textured, superhydrophobic surfaces, the vapour layer gradually relaxes until the surface is completely cooled, without exhibiting a nucleate-boiling phase. This result demonstrates that topological texture on superhydrophobic materials is critical in stabilizing the vapour layer and thus in controlling--by heat transfer--the liquid-gas phase transition at hot surfaces. This concept can potentially be applied to control other phase transitions, such as ice or frost formation, and to the design of low-drag surfaces at which the vapour phase is stabilized in the grooves of textures without heating.

  7. Stabilization of Leidenfrost vapour layer by textured superhydrophobic surfaces

    KAUST Repository

    Vakarelski, Ivan Uriev

    2012-09-12

    In 1756, Leidenfrost observed that water drops skittered on a sufficiently hot skillet, owing to levitation by an evaporative vapour film. Such films are stable only when the hot surface is above a critical temperature, and are a central phenomenon in boiling. In this so-called Leidenfrost regime, the low thermal conductivity of the vapour layer inhibits heat transfer between the hot surface and the liquid. When the temperature of the cooling surface drops below the critical temperature, the vapour film collapses and the system enters a nucleate-boiling regime, which can result in vapour explosions that are particularly detrimental in certain contexts, such as in nuclear power plants. The presence of these vapour films can also reduce liquid-solid drag. Here we show how vapour film collapse can be completely suppressed at textured superhydrophobic surfaces. At a smooth hydrophobic surface, the vapour film still collapses on cooling, albeit at a reduced critical temperature, and the system switches explosively to nucleate boiling. In contrast, at textured, superhydrophobic surfaces, the vapour layer gradually relaxes until the surface is completely cooled, without exhibiting a nucleate-boiling phase. This result demonstrates that topological texture on superhydrophobic materials is critical in stabilizing the vapour layer and thus in controlling-by heat transfer-the liquid-gas phase transition at hot surfaces. This concept can potentially be applied to control other phase transitions, such as ice or frost formation, and to the design of low-drag surfaces at which the vapour phase is stabilized in the grooves of textures without heating. © 2012 Macmillan Publishers Limited. All rights reserved.

  8. 三正丁基膦稳定的铜(Ⅰ)β-二酮配合物的合成、表征以及作为前驱物用化学汽相沉积法生长铜膜%Synthesis of Tri-n-butylphosphine Copper(Ⅰ)β-Diketonates and Their Use in Chemical Vapour Deposition of Copper

    Institute of Scientific and Technical Information of China (English)

    沈应中; Marion Leschke; Stefan E. Schulz; Ramona Ecke; Thomas Gessner; Heinrich Lang

    2004-01-01

    A series of copper(Ⅰ)β-diketonate complexes of type [(nBu3P)mCuL] [m=1 or 2. m=1: L=acac (4), acac=acety lacetonate; L=dbac (5), dbac=1,3-di-tert-butylacetonate; L=hfac (6), hfac=1, 1, 1, 5, 5, 5-hexafluoroacetylaceto nate; m=2: L=acac (7); L=dbac (8); L=hfac (9)] with nBu3P as ancillary Lewis-base ligand is accessible by the reaction of [(nBu3P)mCuCl] (1: m=1, 2: m=2) with the sodium-β-diketonate salts NaL (3a: L=acac; 3b: L=dbac; 3c:L=hfac) in a 1:1 molar ratio. Complexes 7~9 can also be prepared by treatment of 4~6 with one equivalent of nBu3P (10).Spectroscopic data (IR,1H-,13C{1H}-NMR)of 4~9 reveal that the respective β-diketonates are chelate -bound to copper(Ⅰ), thus resulting in a tri-(4~6) or trtra-coordination (7~9) at the transition metal ion.The thermal properties of 4~9 were studied by ThermoGravimetric anlaysis (TG) and Differential Scanning Calorometry (DSC).Hot -wall Chemical Vapour Deposition experiments (CVD) were carried-out by using ,for example ,complexes 4 and 7 as precursors for the deposition of copper onto TiN-coated SiO2 wafers. SEM and EDX studies were applied to characterize the obained copper films.%合成了一系列三正丁基膦辅助配体稳定的铜(Ⅰ)β-二酮配合物,对合成的配合物用元素分析、红外、核磁共振以及热重和差热等手段进行了表征.筛选出性能优良的配合物为前驱物用化学汽相沉积(CVD)的方法生长出金属铜膜,用SEM和EDX等手段对生长的铜膜进行了表征.

  9. The ignitability of petrol vapours and potential for vapour phase explosion by use of TASER® law enforcement electronic control device.

    Science.gov (United States)

    Clarke, C; Andrews, S P

    2014-12-01

    An experimental study was made of the potential of the TASER-X26™ law enforcement electronic control device to ignite petrol vapours if used by an officer to incapacitate a person soaked in petrol, or within a flammable atmosphere containing petrol vapour. Bench scale tests have shown that a wooden mannequin with pig skin covering the chest was a suitable representation of a human target. Full scale tests using the mannequin have shown that the arc from a TASER-X26™ is capable of igniting petrol/air vapours on a petrol-soaked person. Further tests in a 1/5 scale and a full scale compartment have shown that if a TASER is used within a compartment, a petrol vapour explosion (deflagration) may be achieved. It is evident from this research that if used in a flammable vapour rich environment, the device could prove fatal not only to the target but the TASER® operator as well.

  10. The impact of deep overshooting convection on the water vapour and trace gas distribution in the TTL and lower stratosphere

    Science.gov (United States)

    Frey, W.; Schofield, R.; Hoor, P. M.; Ravegnani, F.; Ulanovsky, A.; Viciani, S.; D'Amato, F.; Lane, T. P.

    2014-12-01

    Overshooting convection penetrating the tropical tropopause layer (TTL) and the lower stratosphere has a significant impact on the redistribution of water vapour and further trace gases. This is of importance for the stratospheric water vapour budget, which plays a central role in radiative and chemical processes. Modelling studies and in situ measurements show the hydration potential of convective overshooting partly by direct injection of ice particles into the stratosphere and subsequent sublimation. However, processes leading to dehydration of the TTL may also impact the stratospheric humidity by limiting the amount of water vapour carried aloft. While the large scale drives some of the dehydrating processes, others are of convective origin, for example gravity waves and cooling associated with overshooting turrets. Furthermore, downdrafts may transport dry and ozone rich air masses from the stratosphere into the TTL. Improving our understanding of overshooting convection and its influence on TTL water vapour will ultimately place better constraints on the budget of water vapour in the stratosphere.In this study we use three-dimensional cloud resolving (WRF-ARW) simulations of a deep convective thunderstorm (Hector) to study the redistribution of water vapour and trace gases in the upper TTL/lower stratosphere. Passive tracers are initialised to investigate the transport of air masses. The simulations focus on an Hector event that has been probed by aircraft during the SCOUT-O3 field campaign. Observations were performed in and around overshoots that even penetrated the stratosphere. These observations as well as the model simulations show downward transport and mixing of air masses from the stratosphere, though less strong and more localised in the simulation. Furthermore, the simulations shows a layering of hydrated and dehydrated air masses post-convection in the upper TTL and lower stratosphere. Here we use the model to explain the processes causing the

  11. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

    Energy Technology Data Exchange (ETDEWEB)

    Dechana, A. [Program of Physics and General Science, Faculty of Science and Technology, Songkhla Rajabhat University, Songkhla 90000 (Thailand); Thamboon, P. [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Boonyawan, D., E-mail: dheerawan.b@cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2014-10-15

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al{sub 2}O{sub 3} layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al{sub 2}O{sub 3} films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

  12. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

    Science.gov (United States)

    Dechana, A.; Thamboon, P.; Boonyawan, D.

    2014-10-01

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

  13. Use of plasma enhanced ALD to construct efficient interference filters for astronomy in the FUV

    Science.gov (United States)

    Scowen, Paul A.; Nemanich, Robert; Eller, Brianna; Yu, Hongbin; Mooney, Tom; Beasley, Matt

    2016-07-01

    Over the past few years the advent of atomic layer deposition (ALD) technology has opened new capabilities to the field of coatings deposition for use in optical elements. At the same time, there have been major advances in both optical designs and detector technologies that can provide orders of magnitude improvement in throughput in the far ultraviolet (FUV) and near ultraviolet (NUV) passbands. Recent review work has shown that a veritable revolution is about to happen in astronomical diagnostic work for targets ranging from protostellar and protoplanetary systems, to the intergalactic medium that feeds gas supplies for galactic star formation, and supernovae and hot gas from star forming regions that determine galaxy formation feedback. These diagnostics are rooted in access to a forest of emission and absorption lines in the ultraviolet (UV)[1], and all that prevents this advance is the lack of throughput in such systems, even in space-based conditions. We outline an approach to use a range of materials to implement stable optical layers suitable for protective overcoats with high UV reflectivity and unprecedented uniformity, and use that capability to leverage innovative ultraviolet/optical filter construction to enable astronomical science. These materials will be deposited in a multilayer format over a metal base to produce a stable construct. Specifically, we will employ the use of PEALD (plasma-enhanced atomic layer deposition) methods for the deposition and construction of reflective layers that can be used to construct unprecedented filter designs for use in the ultraviolet.

  14. Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study

    Energy Technology Data Exchange (ETDEWEB)

    Sowińska, Małgorzata, E-mail: malgorzata.sowinska@b-tu.de; Henkel, Karsten; Schmeißer, Dieter [Brandenburg University of Technology Cottbus-Senftenberg, Applied Physics and Sensors, K.-Wachsmann-Allee 17, 03046 Cottbus (Germany); Kärkkänen, Irina; Schneidewind, Jessica; Naumann, Franziska; Gruska, Bernd; Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

    2016-01-15

    The process parameters' impact of the plasma-enhanced atomic layer deposition (PE-ALD) method on the oxygen to nitrogen (O/N) ratio in titanium oxynitride (TiO{sub x}N{sub y}) films was studied. Titanium(IV)isopropoxide in combination with NH{sub 3} plasma and tetrakis(dimethylamino)titanium by applying N{sub 2} plasma processes were investigated. Samples were characterized by the in situ spectroscopic ellipsometry, x-ray photoelectron spectroscopy, and electrical characterization (current–voltage: I-V and capacitance–voltage: C-V) methods. The O/N ratio in the TiO{sub x}N{sub y} films is found to be very sensitive for their electric properties such as conductivity, dielectric breakdown, and permittivity. Our results indicate that these PE-ALD film properties can be tuned, via the O/N ratio, by the selection of the process parameters and precursor/coreactant combination.

  15. RF plasma enhanced MOCVD of yttria stabilized zirconia thin films using octanedionate precursors and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Chopade, S.S. [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India); Nayak, C.; Bhattacharyya, D.; Jha, S.N.; Tokas, R.B.; Sahoo, N.K. [Atomic & Molecular Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India); Deo, M.N. [High Pressure & Synchrotron Radiation Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India); Biswas, A. [Atomic & Molecular Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India); Rai, Sanjay [Indus Synchrotron Utilization Division, RRCAT, Indore 452013 (India); Thulasi Raman, K.H.; Rao, G.M. [Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012 (India); Kumar, Niranjan [Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Patil, D.S., E-mail: dspatil@iitb.ac.in [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India)

    2015-11-15

    Highlights: • YSZ films are deposited by RF plasma MOCVD using Zr(tod){sub 4} and Y(tod){sub 3} precursors. • Films are deposited under the influence of RF self-bias on the substrates. • Films are characterized by different techniques. • Films properties are dependent on yttria content and film structure. - Abstract: Yttria stabilized zirconia thin films have been deposited by RF plasma enhanced MOCVD technique on silicon substrates at substrate temperature of 400 °C. Plasma of precursor vapors of (2,7,7-trimethyl-3,5-octanedionate) yttrium (known as Y(tod){sub 3}), (2,7,7-trimethyl-3,5-octanedionate) zirconium (known as Zr(tod){sub 4}), oxygen and argon gases is used for deposition. To the best of our knowledge, plasma assisted MOCVD of YSZ films using octanediaonate precursors have not been reported in the literature so far. The deposited films have been characterized by GIXRD, FTIR, XPS, FESEM, AFM, XANES, EXAFS, EDAX and spectroscopic ellipsometry. Thickness of the films has been measured by stylus profilometer while tribological property measurement has been done to study mechanical behavior of the coatings. Characterization by different techniques indicates that properties of the films are dependent on the yttria content as well as on the structure of the films.

  16. Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS

    Directory of Open Access Journals (Sweden)

    Stephan Ratzsch

    2015-11-01

    Full Text Available In this study, the influence of direct current (DC biasing on the growth of titanium dioxide (TiO2 layers and their nucleation behavior has been investigated. Titania films were prepared by plasma enhanced atomic layer deposition (PEALD using Ti(OiPr4 as metal organic precursor. Oxygen plasma, provided by remote inductively coupled plasma, was used as an oxygen source. The TiO2 films were deposited with and without DC biasing. A strong dependence of the applied voltage on the formation of crystallites in the TiO2 layer is shown. These crystallites form spherical hillocks on the surface which causes high surface roughness. By applying a higher voltage than the plasma potential no hillock appears on the surface. Based on these results, it seems likely, that ions are responsible for the nucleation and hillock growth. Hence, the hillock formation can be controlled by controlling the ion energy and ion flux. The growth per cycle remains unchanged, whereas the refractive index slightly decreases in the absence of energetic oxygen ions.

  17. Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor.

    Science.gov (United States)

    Park, Jae-Min; Jang, Se Jin; Yusup, Luchana L; Lee, Won-Jun; Lee, Sang-Ick

    2016-08-17

    We report the plasma-enhanced atomic layer deposition (PEALD) of silicon nitride thin film using a silylamine compound as the silicon precursor. A series of silylamine compounds were designed by replacing SiH3 groups in trisilylamine by dimethylaminomethylsilyl or trimethylsilyl groups to obtain sufficient thermal stability. The silylamine compounds were synthesized through redistribution, amino-substitution, lithiation, and silylation reactions. Among them, bis(dimethylaminomethylsilyl)trimethylsilyl amine (C9H29N3Si3, DTDN2-H2) was selected as the silicon precursor because of the lowest bond dissociation energy and sufficient vapor pressures. The energies for adsorption and reaction of DTDN2-H2 with the silicon nitride surface were also calculated by density functional theory. PEALD silicon nitride thin films were prepared using DTDN2-H2 and N2 plasma. The PEALD process window was between 250 and 400 °C with a growth rate of 0.36 Å/cycle. The best film quality was obtained at 400 °C with a RF power of 100 W. The PEALD film prepared showed good bottom and sidewall coverages of ∼80% and ∼73%, respectively, on a trench-patterned wafer with an aspect ratio of 5.5.

  18. The physical properties of cubic plasma-enhanced atomic layer deposition TaN films

    Science.gov (United States)

    Kim, H.; Lavoie, C.; Copel, M.; Narayanan, V.; Park, D.-G.; Rossnagel, S. M.

    2004-05-01

    Plasma-enhanced atomic layer deposition (PE-ALD) is a promising technique to produce high quality metal and nitride thin films at low growth temperature. In this study, very thin (<10 nm) low resistivity (350 μΩ cm) cubic TaN Cu diffusion barrier were deposited by PE-ALD from TaCl5 and a plasma of both hydrogen and nitrogen. The physical properties of TaN thin films including microstructure, conformality, roughness, and thermal stability were investigated by various analytical techniques including x-ray diffraction, medium energy ion scattering, and transmission electron microscopy. The Cu diffusion barrier properties of PE-ALD TaN thin films were studied using synchrotron x-ray diffraction, optical scattering, and sheet resistance measurements during thermal annealing of the test structures. The barrier failure temperatures were obtained as a function of film thickness and compared with those of PE-ALD Ta, physical vapor deposition (PVD) Ta, and PVD TaN. A diffusion kinetics analysis showed that the microstructure of the barrier materials is one of the most critical factors for Cu diffusion barrier performance.

  19. Water Vapour Radiometers for the Australia Telescope Compact Array

    CERN Document Server

    Indermuehle, Balthasar T; Crofts, Jonathan

    2012-01-01

    We have developed Water Vapour Radiometers (WVRs) for the Australia Telescope Compact Array (ATCA) that are capable of determining path fluctuations by virtue of measuring small temperature fluctuations in the atmosphere using the 22.2 GHz water vapour line for each of the six antennae. By measuring the line of sight variations of the water vapour, the induced path excess and thus the phase delay can be estimated and corrections can then be applied during data reduction. This reduces decorrelation of the source signal. We demonstrate how this recovers the telescope's efficiency and image quality as well as how this improves the telescope's ability to use longer baselines at higher frequencies, thereby resulting in higher spatial resolution. A description of the WVR hardware design, their calibration and water vapour retrieval mechanism is given.

  20. Probabilistic risk assessment for six vapour intrusion algorithms

    NARCIS (Netherlands)

    Provoost, J.; Reijnders, L.; Bronders, J.; Van Keer, I.; Govaerts, S.

    2014-01-01

    A probabilistic assessment with sensitivity analysis using Monte Carlo simulation for six vapour intrusion algorithms, used in various regulatory frameworks for contaminated land management, is presented here. In addition a deterministic approach with default parameter sets is evaluated against obse

  1. Probabilistic risk assessment for six vapour intrusion algorithms

    NARCIS (Netherlands)

    Provoost, J.; Reijnders, L.; Bronders, J.; Van Keer, I.; Govaerts, S.

    2014-01-01

    A probabilistic assessment with sensitivity analysis using Monte Carlo simulation for six vapour intrusion algorithms, used in various regulatory frameworks for contaminated land management, is presented here. In addition a deterministic approach with default parameter sets is evaluated against

  2. Probabilistic risk assessment for six vapour intrusion algorithms

    NARCIS (Netherlands)

    Provoost, J.; Reijnders, L.; Bronders, J.; Van Keer, I.; Govaerts, S.

    2014-01-01

    A probabilistic assessment with sensitivity analysis using Monte Carlo simulation for six vapour intrusion algorithms, used in various regulatory frameworks for contaminated land management, is presented here. In addition a deterministic approach with default parameter sets is evaluated against obse

  3. Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride

    Science.gov (United States)

    Yang, Jialing; Eller, Brianna S.; Zhu, Chiyu; England, Chris; Nemanich, Robert J.

    2012-09-01

    Al2O3 films, HfO2 films, and HfO2/Al2O3 stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H2/N2 plasma at 650 °C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 °C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 °C. The valence band and conduction band offsets (VBOs and CBOs) of the Al2O3/GaN and HfO2/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations based on the electron affinity model and charge neutrality level model. Moreover, subsequent annealing had little effect on these offsets; however, the GaN band bending did change depending on the annealing and processing. An Al2O3 layer was investigated as an interfacial passivation layer (IPL), which, as results suggest, may lead to improved stability, performance, and reliability of HfO2/IPL/GaN structures. The VBOs were ˜0.1 and 1.3 eV, while the deduced CBOs were 0.6 and 1.1 eV for HfO2 with respect to Al2O3 and GaN, respectively.

  4. Landmine Detection Technologies to TraceExplosive Vapour Detection Techniques

    OpenAIRE

    2007-01-01

    Large quantity of explosive is manufactured worldwide for use in various types of ammunition,arms, and mines, and used in armed conflicts. During manufacturing and usage of the explosiveequipment, some of the explosive residues are released into the environment in the form ofcontaminated effluents, unburnt explosives fumes and vapours. Limited but uncontrolledcontinuous release of trace vapours also takes place when explosive-laden landmines are deployedin the field. One of the major technolo...

  5. Stand-off detection of alcohol vapours in moving cars

    Science.gov (United States)

    Kopczyński, Krzysztof; Kubicki, Jan; Młyńczak, Jaroslaw; Mierczyk, Jadwiga; Hackiewicz, Klaudia

    2016-12-01

    In this article we present the research on optoelectronic system for stand-off detection of alcohol vapours in moving cars. The idea of using commercially available cascade lasers was presented. Special attention was paid to the optical characteristics of the car windowpanes. It was shown that using 3.45 μm and 3.59 μm wavelengths the alcohol vapours inside a car can be successfully detected even for cars with different windows

  6. An apparatus for determining water vapour permeability of fabrics

    Directory of Open Access Journals (Sweden)

    B. L. Saksena

    1955-04-01

    Full Text Available An apparatus for the determination of water vapour permeability (W.V.P. of fabrics is described. The fabric partitions a closed space into two compartments in which are circulated air streams having high and low water vapour pressure respectively, without any overall pressure or temperature difference. The transfer of moisture from the high to the low humidity side of the fabric is gravimetrically measured. Results of tests are given.

  7. Effect of wet-chemical substrate pretreatment on electronic interface properties and recombination losses of a -Si:H/c -Si and a -SiN{sub x}:H/c -Si hetero-interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Angermann, Heike; Conrad, Erhard; Korte, Lars; Schmidt, Manfred [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institut fuer Silizium-Photovoltaik, Berlin (Germany); Wuensch, Frank; Kunst, Marinus [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institut Solare Brennstoffe und Energiespeichermaterialien, Berlin (Germany); Laades, Abdelazize; Stuerzebecher, Uta [CiS Institut fuer Mikrosensorik GmbH, SolarZentrum Erfurt (Germany)

    2011-03-15

    Surface charge, surface state density and interface recombination behavior on polished float zone (FZ) solar cell substrates were investigated after various wet-chemical pre-cleaning procedures and deposition of amorphous silicon (a-Si:H) or silicon nitride (a-SiNx:H). Applying surface photo voltage (SPV), microwave detected photo conductance decay ({mu}W-PCD) and transient microwave conduction (TRMC) measurements, electronic interface properties were monitored repeatedly during the preparation processes. As shown for an inverted a-Si:H/c-Si hetero-junction structure, with front side passivation by a-SiN{sub x}:H and a p-type a-Si:H emitter on the rear side, the effect of optimised wet-chemical pre-treatment can be preserved during the subsequent soft plasma enhanced chemical vapour deposition of a-Si:H or a-SiN{sub x}:H. This leads to hetero-interfaces with low interface recombination velocities. These results were compared to previously reported findings, obtained on textured Czochralski (CZ) single crystalline substrates. a-SiN{sub x}:H is known to result in a field effect passivation. Nevertheless a strong influence of wet-chemical treatments on surface charge and recombination losses was observed on both flat and textured a-SiN{sub x}:H/c-Si interfaces. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. CHEMICALS

    CERN Document Server

    Medical Service

    2002-01-01

    It is reminded that all persons who use chemicals must inform CERN's Chemistry Service (TIS-GS-GC) and the CERN Medical Service (TIS-ME). Information concerning their toxicity or other hazards as well as the necessary individual and collective protection measures will be provided by these two services. Users must be in possession of a material safety data sheet (MSDS) for each chemical used. These can be obtained by one of several means : the manufacturer of the chemical (legally obliged to supply an MSDS for each chemical delivered) ; CERN's Chemistry Service of the General Safety Group of TIS ; for chemicals and gases available in the CERN Stores the MSDS has been made available via EDH either in pdf format or else via a link to the supplier's web site. Training courses in chemical safety are available for registration via HR-TD. CERN Medical Service : TIS-ME :73186 or service.medical@cern.ch Chemistry Service : TIS-GS-GC : 78546

  9. Double-plasma enhanced carbon shield for spatial/interfacial controlled electrodes in lithium ion batteries via micro-sized silicon from wafer waste

    Science.gov (United States)

    Chen, Bing-Hong; Chuang, Shang-I.; Duh, Jenq-Gong

    2016-11-01

    Using spatial and interfacial control, the micro-sized silicon waste from wafer slurry could greatly increase its retention potential as a green resource for silicon-based anode in lithium ion batteries. Through step by step spatial and interfacial control for electrode, the cyclability of recycled waste gains potential performance from its original poor retention property. In the stages of spatial control, the electrode stabilizers of active, inactive and conductive additives were mixed into slurries for maintaining architecture and conductivity of electrode. In addition, a fusion electrode modification of interfacial control combines electrolyte additive, technique of double-plasma enhanced carbon shield (D-PECS) to convert the chemical bond states and to alter the formation of solid electrolyte interphases (SEIs) in the first cycle. The depth profiles of chemical composition from external into internal electrode illustrate that the fusion electrode modification not only forms a boundary to balance the interface between internal and external electrodes but also stabilizes the SEIs formation and soothe the expansion of micro-sized electrode. Through these effect approaches, the performance of micro-sized Si waste electrode can be boosted from its serious capacity degradation to potential retention (200 cycles, 1100 mAh/g) and better meet the requirements for facile and cost-effective in industrial production.

  10. Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma

    Science.gov (United States)

    Han, Jeong Hwan; Lee, Byoung Kook; Jung, Eun Ae; Kim, Hyo-Suk; Kim, Seong Jun; Kim, Chang Gyoun; Chung, Taek-Mo; An, Ki-Seok

    2015-12-01

    Amorphous ZnSnOx (ZTO) films were prepared using plasma-enhanced atomic layer deposition (PEALD) in a temperature range of 100-200 °C. Metal-organic precursors of Sn(dmamp)2 (dmamp = bis(1-dimethylamino-2-methyl-2-propoxide) and diethylzinc were employed as sources of Sn and Zn, respectively, in combination with O2 plasma as a reactant. Sn levels in the ZTO films were controlled by varying the SnO2/ZnO cycle ratio from 0 to 8. According to the growth behaviour of the ZTO film by alternating SnO2 and ZnO PEALD cycles, it was observed that ZnO growth on Sn-rich ZTO film is retarded, whereas SnO2 growth is enhanced on Zn-rich ZTO film. The chemical states of the ZTO films were confirmed by X-ray photoelectron spectroscopy (XPS); the chemical compositions of the ZTO films were characterised by XPS depth profiling. Grazing-angle X-ray diffraction revealed that the PEALD ZTO films possess an amorphous structure, irrespective of Sn levels from 20 to 59 at.%. ZTO films with intermediate Sn at.% exhibited smooth surface morphology compared to binary ZnO and SnO2 films. Additionally, the step coverage of a ZTO film deposited on hole pattern with an aspect ratio of 8 and opening diameter of 110 nm was about 93%, suggesting the realisation of self-limited growth.

  11. Work function tuning of plasma-enhanced atomic layer deposited WC{sub x}N{sub y} electrodes for metal/oxide/semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Zonensain, Oren; Fadida, Sivan; Eizenberg, Moshe [Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Fisher, Ilanit; Gao, Juwen; Chattopadhyay, Kaushik; Harm, Greg; Mountsier, Tom; Danek, Michal [Lam Research Corporation, 4000 N. First Street, San Jose, California 95134 (United States)

    2015-02-23

    One of the main challenges facing the integration of metals as gate electrodes in advanced MOS devices is control over the Fermi level position at the metal/dielectric interface. In this study, we demonstrate the ability to tune the effective work function (EWF) of W-based electrodes by process modifications of the atomic layer deposited (ALD) films. Tungsten carbo-nitrides (WC{sub x}N{sub y}) films were deposited via plasma-enhanced and/or thermal ALD processes using organometallic precursors. The process modifications enabled us to control the stoichiometry of the WC{sub x}N{sub y} films. Deposition in hydrogen plasma (without nitrogen based reactant) resulted in a stoichiometry of WC{sub 0.4} with primarily W-C chemical bonding, as determined by x-ray photoelectron spectroscopy. These films yielded a relatively low EWF of 4.2 ± 0.1 eV. The introduction of nitrogen based reactant to the plasma or the thermal ALD deposition resulted in a stoichiometry of WC{sub 0.1}N{sub 0.6–0.8} with predominantly W-N chemical bonding. These films produced a high EWF of 4.7 ± 0.1 eV.

  12. Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition

    Science.gov (United States)

    Dendooven, Jolien; Solano, Eduardo; Minjauw, Matthias M.; Van de Kerckhove, Kevin; Coati, Alessandro; Fonda, Emiliano; Portale, Giuseppe; Garreau, Yves; Detavernier, Christophe

    2016-11-01

    We report the design of a mobile setup for synchrotron based in situ studies during atomic layer processing. The system was designed to facilitate in situ grazing incidence small angle x-ray scattering (GISAXS), x-ray fluorescence (XRF), and x-ray absorption spectroscopy measurements at synchrotron facilities. The setup consists of a compact high vacuum pump-type reactor for atomic layer deposition (ALD). The presence of a remote radio frequency plasma source enables in situ experiments during both thermal as well as plasma-enhanced ALD. The system has been successfully installed at different beam line end stations at the European Synchrotron Radiation Facility and SOLEIL synchrotrons. Examples are discussed of in situ GISAXS and XRF measurements during thermal and plasma-enhanced ALD growth of ruthenium from RuO4 (ToRuS™, Air Liquide) and H2 or H2 plasma, providing insights in the nucleation behavior of these processes.

  13. Nonthermal atmospheric pressure plasma enhances mouse limb bud survival, growth, and elongation.

    Science.gov (United States)

    Chernets, Natalie; Zhang, Jun; Steinbeck, Marla J; Kurpad, Deepa S; Koyama, Eiki; Friedman, Gary; Freeman, Theresa A

    2015-01-01

    The enhanced differentiation of mesenchymal cells into chondrocytes or osteoblasts is of paramount importance in tissue engineering and regenerative therapies. A newly emerging body of evidence demonstrates that appendage regeneration is dependent on reactive oxygen species (ROS) production and signaling. Thus, we hypothesized that mesenchymal cell stimulation by nonthermal (NT)-plasma, which produces and induces ROS, would (1) promote skeletal cell differentiation and (2) limb autopod development. Stimulation with a single treatment of NT-plasma enhanced survival, growth, and elongation of mouse limb autopods in an in vitro organ culture system. Noticeable changes included enhanced development of digit length and definition of digit separation. These changes were coordinated with enhanced Wnt signaling in the distal apical epidermal ridge (AER) and presumptive joint regions. Autopod development continued to advance for approximately 144 h in culture, seemingly overcoming the negative culture environment usually observed in this in vitro system. Real-time quantitative polymerase chain reaction analysis confirmed the up-regulation of chondrogenic transcripts. Mechanistically, NT-plasma increased the number of ROS positive cells in the dorsal epithelium, mesenchyme, and the distal tip of each phalange behind the AER, determined using dihydrorhodamine. The importance of ROS production/signaling during development was further demonstrated by the stunting of digital outgrowth when anti-oxidants were applied. Results of this study show NT-plasma initiated and amplified ROS intracellular signaling to enhance development of the autopod. Parallels between development and regeneration suggest that the potential use of NT-plasma could extend to both tissue engineering and clinical applications to enhance fracture healing, trauma repair, and bone fusion.

  14. Properties of HfAlO film deposited by plasma enhanced atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Duo [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Cheng, Xinhong, E-mail: xh_cheng@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Jia, Tingting; Zheng, Li; Xu, Dawei; Wang, Zhongjian; Xia, Chao; Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China)

    2013-07-15

    Plasma enhanced atomic layer deposition (PEALD) method can reduce film growing temperature, and allow in situ plasma treatment. In this work, HfAlO and HfO{sub 2} films were deposited with PEALD at 160 °C. Microstructure analysis showed that both films were amorphous after rapid thermal annealing (RTA) treatment, and HfAlO sample showed better interfacial structure than HfO{sub 2}. X-ray photoelectron spectroscopy (XPS) spectra indicated that main component of the interfacial layer of HfAlO sample was Hf–Si–O and Al–Si–O bonds, the valence band offset value between the HfAlO film and Si substrate was calculated to be 2.5 eV. The dominant leakage current mechanism of the samples was Schottky emission at a low electric field (<1.4 MV/cm), and Poole–Frenkel emission mechanism at a higher electric field (>1.4 MV/cm). The equivalent oxide thicknesses (EOT) of the HfAlO samples were 1.0 nm and 1.3 nm, respectively. The density of interface states between dielectric and substrate were calculated to be 1.2 × 10{sup 12} eV{sup −1}cm{sup −2} and 1.3 × 10{sup 12} eV{sup −1}cm{sup −2}, respectively. In comparison with HfO{sub 2} film, HfAlO film has good interfacial structure and electrical performance.

  15. Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

    Energy Technology Data Exchange (ETDEWEB)

    Amusan, Akinwumi A., E-mail: akinwumi.amusan@ovgu.de; Kalkofen, Bodo; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Gargouri, Hassan; Wandel, Klaus; Pinnow, Cay [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

    2016-01-15

    Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt{sub 3}) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO{sub 2}, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detection limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10{sup −6} Ω cm was obtained for approximately 97 nm Ag film on SiO{sub 2}/Si substrate. The thickness was determined from the SEM cross section on the SiO{sub 2}/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO{sub 2} surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images.

  16. Luminescence studies of isolated ZnO nanowires grown by the vapour-liquid-solid method

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, Oscar; Hortelano, Vanesa; Jimenez, Juan [Optronlab Group, Edificio I and D, Universidad de Valladolid, Paseo de Belen 1, 47011 Valladolid (Spain); Gueell, Frank; Cornet, Albert [Departament d' Electronica, Universitat de Barcelona, C/Marti i Franques 1, 08028 Barcelona, Catalunya (Spain); Morante, Joan Ramon [Departament d' Electronica, Universitat de Barcelona, C/Marti i Franques 1, 08028 Barcelona, Catalunya (Spain); IREC, Institut de Recerca en Energia de Catalunya, C/Josep Pla 2, 08019 Barcelona, Catalunya (Spain)

    2012-07-15

    In this work we analysed, by means of Spectral Imaging Cathodoluminescence, the luminescence properties of individual ZnO nanowires (NWs) grown by chemical vapour deposition. The NWs show a general increase of the radiative recombination channels, and a decrease of the relative intensity of the visible band respect to the bound exciton emission, pointing to a high crystal quality. Local changes in the peak position and intensity of the near band edge were found by studying the luminescence of individual NWs, which have been ascribed to structural changes along them (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Vapour Growth of Micro-Coiled Ceramic Fibers and their Properties

    OpenAIRE

    1995-01-01

    Micro-coiled fibers of carbon, SiC, Si3N4 TiC, ZrC and HfC were prepared by a metal-impurity activated chemical vapor deposition or vapour phase metallizing of the coiled carbon fibers. The growth conditions, morphology, growth mechanism and some properties were examined. The double-coiled carbon fibers were prepared using acetylene as a carbon source and various powders or plates of transition metals, metal carbides, MoS2, Ti2O3, and Ni single crystal plate as a catalyst at 650-850°C. The tr...

  18. Plasma-enhanced atomic-layer-deposited MoO{sub x} emitters for silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ziegler, Johannes; Schneider, Thomas; Sprafke, Alexander N. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Mews, Mathias; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institute for Silicon-Photovoltaics, Berlin (Germany); Kaufmann, Kai [Fraunhofer Center for Silicon Photovoltaics CSP, Halle (Germany); University of Applied Sciences, Hochschule Anhalt Koethen, Koethen (Germany); Wehrspohn, Ralf B. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Fraunhofer Institute for Mechanics of Materials IWM Halle, Halle (Germany)

    2015-09-15

    A method for the deposition of molybdenum oxide (MoO{sub x}) with high growth rates at temperatures below 200 C based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric MoO{sub x} films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed. (orig.)

  19. A new approach to the water vapour feedback

    Science.gov (United States)

    Ingram, W.

    2012-12-01

    Climate sensitivity is often said to be doubled by water vapour feedback. From simple physical arguments, confirmed by GCMs, and consistent with the limited observational evidence, we expect the distribution of RH to change little under climate change. This implies a substantial positive feedback on climate change - but why about a doubling? And why is this value so robust even to major modelling errors and approximations? And why do GCMs never give a run-away water vapour greenhouse effect, plausible though extrapolation can make it seem? Considering the "paradox" of Simpson (1928) leads to a simple model that explains all these. The "partly-Simpsonian" model for the water vapour feedback on climate change implies a very simple constraint - that the component of OLR radiated by water vapour does not change as climate changes, while that radiated by everything else (surface, clouds, CO2, etc.) increases following Planck's Law. This does not predict the actual non-cloud LW response λCSLW of GCMs quantitatively accurately, but gives the general size. It also explains why a run-away water vapour greenhouse effect is not possible in Earth-like conditions: the partly-Simpsonian water vapour feedback can do no more than cancel part of the basic Planck's-Law negative feedback - less than 100% as long as some OLR is not from water vapour. The robustness of the GCMs' water vapour feedbacks, even if they simulate the water vapour distribution very badly, also follows: the fraction of emission by water vapour is both innately computationally robust (even large errors in water vapour amounts can only affect those limited parts of the spectrum of intermediate optical depth: most of the spectrum will be effectively opaque or effectively transparent at any given location), and closely related to the surface downward LW flux, which is verifiable and tunable. In addition, the partly-Simpsonian model provides a physical explanation for the long-known fact that LW radiances or OLR

  20. RESEARCH NOTE WCA repulsive and attractive contributions to the thermodynamic properties at the vapour-liquid equilibrium

    Science.gov (United States)

    Cuadros, F.; Mulero, A.; Faundez, C. A.

    The Lennard-Jones attractive and repulsive contributions of intermolecular forces (as separated in the Weeks-Chandler-Andersen (WCA) theory) to the pressure and chemical potential of coexisting vapour and liquid phases are obtained by using an equation of state recently proposed by us. Some comments are given about the computer simulation results obtained by Plackov and Sadus (1997, Fluid Phase Equilib., 134, 77) using the McQuarrie-Katz separation of the intermolecular potential.

  1. Nanofluidic transport governed by the liquid/vapour interface.

    Science.gov (United States)

    Lee, Jongho; Laoui, Tahar; Karnik, Rohit

    2014-04-01

    Liquid/vapour interfaces govern the behaviour of a wide range of systems but remain poorly understood, leaving ample margin for the exploitation of intriguing functionalities for applications. Here, we systematically investigate the role of liquid/vapour interfaces in the transport of water across apposing liquid menisci in osmosis membranes comprising short hydrophobic nanopores that separate two fluid reservoirs. We show experimentally that mass transport is limited by molecular reflection from the liquid/vapour interface below a certain length scale, which depends on the transmission probability of water molecules across the nanopores and on the condensation probability of a water molecule incident on the liquid surface. This fundamental yet elusive condensation property of water is measured under near-equilibrium conditions and found to decrease from 0.36 ± 0.21 at 30 °C to 0.18 ± 0.09 at 60 °C. These findings define the regime in which liquid/vapour interfaces govern nanofluidic transport and have implications for understanding mass transport in nanofluidic devices, droplets and bubbles, biological components and porous media involving liquid/vapour interfaces.

  2. Simultaneous synthesis of nanodiamonds and graphene via plasma enhanced chemical vapor deposition (MW PE-CVD) on copper.

    Science.gov (United States)

    Gottlieb, Steven; Wöhrl, Nicolas; Schulz, Stephan; Buck, Volker

    2016-01-01

    The simultaneous growth of both nanodiamonds and graphene on copper samples is described for the first time. A PE-CVD process is used to synthesize graphene layers and nanodiamond clusters from a hydrogen/methane gas mixture as it is typically done successfully in thermal CVD processes for graphene synthesis. However, the standard thermal CVD process is not without problems since the deposition of graphene is affected by the evaporation of a notable amount of copper caused by the slow temperature increase typical for thermal CVD resulting in a long process time. In sharp contrast, the synthesis of graphene by PE-CVD can circumvent this problem by substantially shortening the process time at holding out the prospect of a lower substrate temperature. The reduced thermal load and the possibility to industrially scale-up the PE-CVD process makes it a very attractive alternative to the thermal CVD process with respect to the graphene production in the future. Nanodiamonds are synthesized in PE-CVD reactors for a long time because these processes offer a high degree of control over the film's nanostructure and simultaneously providing a significant high deposition rate. To model the co-deposition process, the three relevant macroscopic parameters (pressure, gas mixture and microwave power) are correlated with three relevant process properties (plasma ball size, substrate temperature and C2/Hα-ratio) and the influence on the quality of the deposited carbon allotropes is investigated. For the evaluation of the graphene as well as the nanodiamond quality, Raman spectroscopy used whereas the plasma properties are measured by optical methods. It is found that the diamond nucleation can be influenced by the C2/Hα-ratio in the plasma, while the graphene quality remains mostly unchanged by this parameter. Moreover it is derived from the experimental data that the direct plasma contact with the copper surface is beneficial for the nucleation of the diamond while the growth and quality of the graphene benefits from a larger distance to the plasma. Therefore, this work presents a basis for a method to tailor the deposition of graphene-diamond hybrid films using a MW PE-CVD process or to suppress the diamond deposition entirely if desired.

  3. Can painted glass felt or glass fibre cloth be used as vapour barrier?

    DEFF Research Database (Denmark)

    El-Khattam, Amira; Andersen, Mie Them; Hansen, Kurt Kielsgaard

    2014-01-01

    it is essential to know how much influence a surface treatment has on the water vapour transport. Traditionally, there has been most focus on paints that affect the permeability as little as possible. However, sometimes water vapour resistance is desirable. Especially, this is relevant in existing buildings...... with a ventilated attic where the ceiling may be air tight but has no vapour barrier; post-insulation of the attic may cause the need for a vapour barrier. Placing a vapour barrier above the ceiling can be tiresome and it is difficult to ensure tightness. A simpler way is to paint a vapour barrier directly...

  4. SOSA – a new model to simulate the concentrations of organic vapours and sulphuric acid inside the ABL – Part 1: Model description and initial evaluation

    DEFF Research Database (Denmark)

    Boy, M.; Sogachev, Andrey; Lauros, J.

    2010-01-01

    Chemistry in the atmospheric boundary layer (ABL) is controlled by complex processes of surface fluxes, flow, turbulent transport, and chemical reactions. We present a new model SOSA (model to simulate the concentration of organic vapours and sulphuric acid) and attempt to reconstruct the emissions...

  5. SOSA – a new model to simulate the concentrations of organic vapours and sulphuric acid inside the ABL – Part 1: Model description and initial evaluation

    DEFF Research Database (Denmark)

    Boy, M.; Sogachev, Andrey; Lauros, J.

    2011-01-01

    Chemistry in the atmospheric boundary layer (ABL) is controlled by complex processes of surface fluxes, flow, turbulent transport, and chemical reactions. We present a new model SOSA (model to simulate the concentration of organic vapours and sulphuric acid) and attempt to reconstruct the emissions...

  6. Landmine Detection Technologies to TraceExplosive Vapour Detection Techniques

    Directory of Open Access Journals (Sweden)

    J. C. Kapoor

    2007-11-01

    Full Text Available Large quantity of explosive is manufactured worldwide for use in various types of ammunition,arms, and mines, and used in armed conflicts. During manufacturing and usage of the explosiveequipment, some of the explosive residues are released into the environment in the form ofcontaminated effluents, unburnt explosives fumes and vapours. Limited but uncontrolledcontinuous release of trace vapours also takes place when explosive-laden landmines are deployedin the field. One of the major technological challenges in post-war scenario worldwide is thedetection of landmines using these trace vapour signatures and neutralising them safely.  Differenttypes of explosives are utilised as the main charge in antipersonnel and antitank landmines. Inthis paper, an effort has been made to review the techniques so far available based on explosivevapour detection especially to detect the landmines. A comprehensive compilation of relevantinformation on the techniques is presented, and their maturity levels, shortcomings, and difficultiesfaced are highlighted.

  7. Single mode quadrature entangled light from room temperature atomic vapour

    CERN Document Server

    Wasilewski, W; Jensen, K; Madsen, L S; Krauter, H; Polzik, E S

    2009-01-01

    We analyse a novel squeezing and entangling mechanism which is due to correlated Stokes and anti-Stokes photon forward scattering in a multi-level atom vapour. Following the proposal we present an experimental demonstration of 3.5 dB pulsed frequency nondegenerate squeezed (quadrature entangled) state of light using room temperature caesium vapour. The source is very robust and requires only a few milliwatts of laser power. The squeezed state is generated in the same spatial mode as the local oscillator and in a single temporal mode. The two entangled modes are separated by twice the Zeeman frequency of the vapour which can be widely tuned. The narrow-band squeezed light generated near an atomic resonance can be directly used for atom-based quantum information protocols. Its single temporal mode characteristics make it a promising resource for quantum information processing.

  8. Simultaneous negative permittivity and permeability in a coherent atomic vapour

    Institute of Scientific and Technical Information of China (English)

    Shen Jian-Qi

    2007-01-01

    A new quantum optical mechanism to realize simultaneously negative electric permittivity and magnetic permeability is suggested. In order to obtain a negative permeability, we choose a proper atomic configuration that can dramatically enhance the contribution of the magnetic-dipole allowed transition via the atomic phase coherence. It is shown that the atomic system chosen with proper optical parameters can give rise to striking electromagnetic responses (leading to a negative refractive index) and that the atomic vapour becomes a left-handed medium in an optical frequency band. Differing from the previous schemes of artificial composite metamaterials (based on classical electromagnetic theory) to achieve the left-handed materials, which consist of anisotropic millimetre-scale composite structure units, the left-handed atomic vapour presented here is isotropic and homogeneous at the atomic-scale level. Such an advantage may be valuable in realizing the superlens (and hence perfect image) with left-handed atomic vapour.

  9. An Investigative and Concise Review on Evaporation and Condensation Processes Using Vapour Adsorption Technique

    Directory of Open Access Journals (Sweden)

    Dim Dim Kumar

    2014-10-01

    Full Text Available The vapour adsorption refrigeration is based on the evaporation and condensation of a refrigerant combined with adsorption or chemical reaction. The towering fossil fuel price and the responsiveness of environmental problems offer many potential applications to thermal powered adsorption cooling. However, the adsorption cooling machines still have some disadvantages that hinder their wide application. The patents surveyed are classified into four main groups: adsorption system development, adsorbent bed innovation, adsorbent/adsorbate material development and novel application of adsorption cooling system. The adsorption refrigeration is based on the evaporation and condensation of a refrigerant combined with adsorption or chemical reaction. Important targets are to reach a high efficiency through optimization measures at various components and the control system. On the other hand measures are to verify to simplify the construction with regard to a low-cost manufacturing, as well as to reach long periods with maintenance-free operation. This review paper gives a comprehensive review on the work carried out on vapour adsorption refrigeration for cryogenic applications.

  10. Synthesis of graphene by cobalt-catalyzed decomposition of methane in plasma-enhanced CVD: Optimization of experimental parameters with Taguchi method

    Science.gov (United States)

    Mehedi, H.-A.; Baudrillart, B.; Alloyeau, D.; Mouhoub, O.; Ricolleau, C.; Pham, V. D.; Chacon, C.; Gicquel, A.; Lagoute, J.; Farhat, S.

    2016-08-01

    This article describes the significant roles of process parameters in the deposition of graphene films via cobalt-catalyzed decomposition of methane diluted in hydrogen using plasma-enhanced chemical vapor deposition (PECVD). The influence of growth temperature (700-850 °C), molar concentration of methane (2%-20%), growth time (30-90 s), and microwave power (300-400 W) on graphene thickness and defect density is investigated using Taguchi method which enables reaching the optimal parameter settings by performing reduced number of experiments. Growth temperature is found to be the most influential parameter in minimizing the number of graphene layers, whereas microwave power has the second largest effect on crystalline quality and minor role on thickness of graphene films. The structural properties of PECVD graphene obtained with optimized synthesis conditions are investigated with Raman spectroscopy and corroborated with atomic-scale characterization performed by high-resolution transmission electron microscopy and scanning tunneling microscopy, which reveals formation of continuous film consisting of 2-7 high quality graphene layers.

  11. Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes

    Science.gov (United States)

    Chen, Zheng; Wang, Haoran; Wang, Xiao; Chen, Ping; Liu, Yunfei; Zhao, Hongyu; Zhao, Yi; Duan, Yu

    2017-01-01

    Encapsulation is essential to protect the air-sensitive components of organic light-emitting diodes (OLEDs) such as active layers and cathode electrodes. In this study, hybrid zirconium inorganic/organic nanolaminates were fabricated using remote plasma enhanced atomic layer deposition (PEALD) and molecular layer deposition at a low temperature. The nanolaminate serves as a thin-film encapsulation layer for OLEDs. The reaction mechanism of PEALD process was investigated using an in-situ quartz crystal microbalance (QCM) and in-situ quadrupole mass spectrometer (QMS). The bonds present in the films were determined by Fourier transform infrared spectroscopy. The primary reaction byproducts in PEALD, such as CO, CO2, NO, H2O, as well as the related fragments during the O2 plasma process were characterized using the QMS, indicating a combustion-like reaction process. The self-limiting nature and growth mechanisms of the ZrO2 during the complex surface chemical reaction of the ligand and O2 plasma were monitored using the QCM. The remote PEALD ZrO2/zircone nanolaminate structure prolonged the transmission path of water vapor and smooth surface morphology. Consequently, the water barrier properties were significantly improved (reaching 3.078 × 10‑5 g/m2/day). This study also shows that flexible OLEDs can be successfully encapsulated to achieve a significantly longer lifetime.

  12. Plasma-enhanced CVD of functional coatings in Ar/maleic anhydride/C2H2 homogeneous dielectric barrier discharges at atmospheric pressure

    Science.gov (United States)

    Zajíčková, Lenka; Jelínek, Petr; Obrusník, Adam; Vodák, Jiří; Nečas, David

    2017-03-01

    In this contribution, we focus on the general problems of plasma-enhanced chemical vapor deposition in atmospheric pressure dielectric barrier discharges, i.e. deposition uniformity, film roughness and the formation of dust particles, and demonstrate them on the example of carboxyl coatings prepared by co-polymerization of acetylene and maleic anhydride. Since the transport of monomers at atmospheric pressure is advection-driven, special attention is paid to the gas dynamics simulations, gas flow patterns, velocity and residence time. By using numerical simulations, we design an optimized gas supply geometry capable of synthesizing uniform layers. The selection of the gas mixture containing acetylene was motivated by two of its characteristics: (i) suppression of filaments in dielectric barrier discharges, and (ii) improved film cross-linking, keeping the amount of functional groups high. However, acetylene discharges are prone to the formation of nanoparticles that can be incorporated into the deposited films, leading to their high roughness. Therefore, we also discuss the role of the gas composition, the spatial position of the substrate with respect to gas flow and the deposition time on the topography of the deposited films.

  13. Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho; Cha, Suk Won, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Iui-dong, Yeongtong-gu, Suwon 443-270 (Korea, Republic of); Hong, Soon Wook; Koo, Bongjun; Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); An, Jihwan [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

    2016-01-15

    Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.

  14. Intercomparison of TCCON and MUSICA Water Vapour Products

    Science.gov (United States)

    Weaver, D.; Strong, K.; Deutscher, N. M.; Schneider, M.; Blumenstock, T.; Robinson, J.; Notholt, J.; Sherlock, V.; Griffith, D. W. T.; Barthlott, S.; García, O. E.; Smale, D.; Palm, M.; Jones, N. B.; Hase, F.; Kivi, R.; Ramos, Y. G.; Yoshimura, K.; Sepúlveda, E.; Gómez-Peláez, Á. J.; Gisi, M.; Kohlhepp, R.; Warneke, T.; Dohe, S.; Wiegele, A.; Christner, E.; Lejeune, B.; Demoulin, P.

    2014-12-01

    We present an intercomparison between the water vapour products from the Total Carbon Column Observing Network (TCCON) and the MUlti-platform remote Sensing of Isotopologues for investigating the Cycle of Atmospheric water (MUSICA), two datasets from ground-based Fourier Transform InfraRed (FTIR) spectrometers with good global representation. Where possible, comparisons to radiosondes are also included. The near-infrared TCCON measurements are optimized to provide precise monitoring of greenhouse gases for carbon cycle studies; however, TCCON's retrievals also produce water vapour products. The mid-infrared MUSICA products result from retrievals optimized to give precise and accurate information about H2O, HDO, and δD. The MUSICA water vapour products have been validated by extensive intercomparisons with H2O and δD in-situ measurements made from ground, radiosonde, and aircraft (Schneider et al. 2012, 2014), as well as by intercomparisons with satellite-based H2O and δD remote sensing measurements (Wiegele et al., 2014). This dataset provides a valuable reference point for other measurements of water vapour. This study is motivated by the limited intercomparisons performed for TCCON water vapour products and limited characterisation of their uncertainties. We compare MUSICA and TCCON products to assess the potential for TCCON measurements to contribute to studies of the water cycle, water vapour's role in climate and use as a tracer for atmospheric dynamics, and to evaluate the performance of climate models. The TCCON and MUSICA products result from measurements taken using the same FTIR instruments, enabling a comparison with constant instrumentation. The retrieval techniques differ, however, in their method and a priori information. We assess the impact of these differences and characterize the comparability of the TCCON and MUSICA datasets.

  15. Validation of SCIAMACHY AMC-DOAS water vapour columns

    Directory of Open Access Journals (Sweden)

    S. Noël

    2005-04-01

    Full Text Available A first validation of water vapour total column amounts derived from measurements of the SCanning Imaging Absorption spectroMeter for Atmospheric CHartographY (SCIAMACHY in the visible spectral region has been performed. For this purpose, SCIAMACHY water vapour data have been determined for the year 2003 using an extended version of the Differential Optical Absorption Spectroscopy (DOAS method, called Air Mass Corrected (AMC-DOAS. The SCIAMACHY results are compared with corresponding water vapour measurements by the Special Sensor Microwave Imager (SSM/I and with model data from the European Centre for Medium-Range Weather Forecasts (ECMWF.

    In confirmation of previous results it could be shown that SCIAMACHY derived water vapour columns are typically slightly lower than both SSM/I and ECMWF data, especially over ocean areas. However, these deviations are much smaller than the observed scatter of the data which is caused by the different temporal and spatial sampling and resolution of the data sets. For example, the overall difference with ECMWF data is only −0.05 g/cm2 whereas the typical scatter is in the order of 0.5 g/cm2. Both values show almost no variation over the year.

    In addition, first monthly means of SCIAMACHY water vapour data have been computed. The quality of these monthly means is currently limited by the availability of calibrated SCIAMACHY spectra. Nevertheless, first comparisons with ECMWF data show that SCIAMACHY (and similar instruments are able to provide a new independent global water vapour data set.

  16. A Discharge-Excited SrBr2 Vapour Laser

    Institute of Scientific and Technical Information of China (English)

    潘佰良; 姚志欣; 陈钢

    2002-01-01

    A new-style discharge tube for a metal vapour laser has been designed and built. SrBr2 was successfullyused to replace the metal strontium as a working medium. Multi-line laser oscillations from resonance tometastable transition of strontium atoms (6.45um), ions (1.03um/1.O9um) and from strontium ion recombi-nation (416.2nm/430.5nm) have been obtained through longitudinal pulsed discharge. The problem of an in-compatibility reaction between metallic strontium and the discharge tube in the strontium vapour laser has beensolved. Some proposals are presented for further developments of strontium halide lasers.

  17. Spontaneous and parametric processes in warm rubidium vapours

    CERN Document Server

    Dąbrowski, Michał; Pęcak, Daniel; Chrapkiewicz, Radosław; Wasilewski, Wojciech

    2014-01-01

    Warm rubidium vapours are known to be a versatile medium for a variety of experiments in atomic physics and quantum optics. Here we present experimental results on producing the frequency converted light for quantum applications based on spontaneous and stimulated processes in rubidium vapours. In particular, we study the efficiency of spontaneously initiated stimulated Raman scattering in the {\\Lambda}-level configuration and conditions of generating the coherent blue light assisted by multi-photon transitions in the diamond-level configuration. Our results will be helpful in search for new types of interfaces between light and atomic quantum memories.

  18. Spontaneuos and Parametric Processes in Warm Rubidium Vapours

    Directory of Open Access Journals (Sweden)

    Dąbrowski M.

    2014-12-01

    Full Text Available Warm rubidium vapours are known to be a versatile medium for a variety of experiments in atomic physics and quantum optics. Here we present experimental results on producing the frequency converted light for quantum applications based on spontaneous and stimulated processes in rubidium vapours. In particular, we study the efficiency of spontaneously initiated stimulated Raman scattering in the Λ-level configuration and conditions of generating the coherent blue light assisted by multi-photon transitions in the diamond-level configuration. Our results will be helpful in search for new types of interfaces between light and atomic quantum memories.

  19. Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements.

    Science.gov (United States)

    Melo, Luis; Burton, Geoff; Kubik, Philip; Wild, Peter

    2016-04-04

    Long period gratings (LPGs) are coated with hafnium oxide using plasma-enhanced atomic layer deposition (PEALD) to increase the sensitivity of these devices to the refractive index of the surrounding medium. PEALD allows deposition at low temperatures which reduces thermal degradation of UV-written LPGs. Depositions targeting three different coating thicknesses are investigated: 30 nm, 50 nm and 70 nm. Coating thickness measurements taken by scanning electron microscopy of the optical fibers confirm deposition of uniform coatings. The performance of the coated LPGs shows that deposition of hafnium oxide on LPGs induces two-step transition behavior of the cladding modes.

  20. Can painted glass felt or glass fibre cloth be used as vapour barrier?

    DEFF Research Database (Denmark)

    El-Khattam, Amira; Andersen, Mie Them; Hansen, Kurt Kielsgaard

    2014-01-01

    it is essential to know how much influence a surface treatment has on the water vapour transport. Traditionally, there has been most focus on paints that affect the permeability as little as possible. However, sometimes water vapour resistance is desirable. Especially, this is relevant in existing buildings...... with a ventilated attic where the ceiling may be air tight but has no vapour barrier; post-insulation of the attic may cause the need for a vapour barrier. Placing a vapour barrier above the ceiling can be tiresome and it is difficult to ensure tightness. A simpler way is to paint a vapour barrier directly...... on the ceiling e.g. as an ordinary paint. This paper presents the results of an investigation of the water vapour resistance of surface treatments which are commonly used in-door. The water vapour resistance was measured by the cup method. Aerated concrete was investigated with and without various surface...

  1. Simulation of Satellite Water Vapour Lidar Measurements: Performance Assessment under Real Atmospheric Conditions.

    OpenAIRE

    Di Girolamo, Paolo; Behrendt, Andreas; Kiemle, Christoph; Wulfmeyer, Volker; Bauer, Heinz; Summa, Donato; Dörnbrack, Andreas; Ehret, Gerhard

    2008-01-01

    A lidar simulator has been applied to assess the performances of a satellite water vapour differential absorption lidar (DIAL) system. Measurements performed by the airborne Deutsches Zentrum für Luft- und Raumfahrt (DLR) water vapour DIAL on 15 May 2002 during ESA’s Water Vapour Lidar Experiment (WALEX), in combination with MM5 mesoscale model output, were used to obtain backscatter and water vapour fields with high resolution and accuracy. These data and model output serve as input for the ...

  2. Impact of major volcanic eruptions on stratospheric water vapour

    Science.gov (United States)

    Löffler, Michael; Brinkop, Sabine; Jöckel, Patrick

    2016-05-01

    Volcanic eruptions can have a significant impact on the Earth's weather and climate system. Besides the subsequent tropospheric changes, the stratosphere is also influenced by large eruptions. Here changes in stratospheric water vapour after the two major volcanic eruptions of El Chichón in Mexico in 1982 and Mount Pinatubo on the Philippines in 1991 are investigated with chemistry-climate model simulations. This study is based on two simulations with specified dynamics of the European Centre for Medium-Range Weather Forecasts Hamburg - Modular Earth Submodel System (ECHAM/MESSy) Atmospheric Chemistry (EMAC) model, performed within the Earth System Chemistry integrated Modelling (ESCiMo) project, of which only one includes the long-wave volcanic forcing through prescribed aerosol optical properties. The results show a significant increase in stratospheric water vapour induced by the eruptions, resulting from increased heating rates and the subsequent changes in stratospheric and tropopause temperatures in the tropics. The tropical vertical advection and the South Asian summer monsoon are identified as sources for the additional water vapour in the stratosphere. Additionally, volcanic influences on tropospheric water vapour and El Niño-Southern Oscillation (ENSO) are evident, if the long-wave forcing is strong enough. Our results are corroborated by additional sensitivity simulations of the Mount Pinatubo period with reduced nudging and reduced volcanic aerosol extinction.

  3. Surface Electrical Conductivity of Single Crystal Spinel in Cesium Vapour.

    Science.gov (United States)

    2007-11-02

    magnesium aluminate spinel at temperatures ranging from 573K to 923K, in the presence of cesium vapour at pressures up to 1Torr. The interest in spinel has...in the core of a nuclear reactor. In contrast to magnesium oxide and alumina, electron irradiation of spinel produces no dislocation structures

  4. Water vapour and carbon dioxide decrease nitric oxide readings

    NARCIS (Netherlands)

    vanderMark, TW; Kort, E; Meijer, RJ; Postma, DS; Koeter, GH

    Measurement of nitric oxide levels in exhaled ah-is commonly performed using a chemiluminescence detector. However, water vapour and carbon dioxide affect the chemiluminescence process, The influence of these gases at the concentrations present in exhaled air has not vet been studied. For this in

  5. Human volunteer study with PGME: Eye irritation during vapour exposure

    NARCIS (Netherlands)

    Emmen, H.H.; Muijser, H.; Arts, J.H.E.; Prinsen, M.K.

    2003-01-01

    The objective of this study was to establish the possible occurrence of eye irritation and subjective symptoms in human volunteers exposed to propylene glycol monomethyl ether (PGME) vapour at concentrations of 0, 100 and 150 ppm. Testing was conducted in 12 healthy male volunteers using a repeated

  6. Condensation of saturated vapours on isentropic compression: a simple criterion

    Energy Technology Data Exchange (ETDEWEB)

    Patwardhan, V.S.

    1987-01-01

    A criterion is derived and tested for determining whether the isentropic compression of saturated vapours leads to superheat or condensation. This criterion needs only values of the critical temperature, the acentric factor and the liquid specific heat. The application of the criterion for selection of a working fluid both for heat pumps and heat engines is discussed.

  7. Detection of quadrupole relaxation in an optically pumped cesium vapour

    Energy Technology Data Exchange (ETDEWEB)

    Bernabeu, E.; Tornos, J.

    1985-10-01

    The relaxation of quadrupole orientation induced by means of optical pumping in a cesium vapour is experimentally studied, and the results are compared to the theoretical predictions. The optical detection process of this type of orientation is also discussed as a function of the polarization and spectral profile of the detection light.

  8. Consistent vapour-liquid equilibrium data containing lipids

    DEFF Research Database (Denmark)

    Cunico, Larissa; Ceriani, Roberta; Sarup, Bent

    for their mixtures in open literature, what makes necessary the development of reliable predictive models based on limited data. To contribute to the missing data, measurements of isobaric vapour-liquid equilibrium (VLE) data of three binary mixtures at two different pressures were performed at State University...

  9. Human volunteer study with PGME: Eye irritation during vapour exposure

    NARCIS (Netherlands)

    Emmen, H.H.; Muijser, H.; Arts, J.H.E.; Prinsen, M.K.

    2003-01-01

    The objective of this study was to establish the possible occurrence of eye irritation and subjective symptoms in human volunteers exposed to propylene glycol monomethyl ether (PGME) vapour at concentrations of 0, 100 and 150 ppm. Testing was conducted in 12 healthy male volunteers using a repeated

  10. Resonant CARS Spectroscopy of s-Tetrazine Vapour

    NARCIS (Netherlands)

    Aartsma, Thijs J.; Hesselink, Wim H.; Wiersma, Douwe A.

    1980-01-01

    CARS experiments on s-tetrazine vapour show that the eletronic resonance enhancement in the Q-branch is most effective for the lower J values. This suggests that the radiationless relaxation rate in the excited state increases with rotational quantum number. Delayed picosecond CARS experiments indic

  11. Vapour intrusion from the vadose zone—seven algorithms compared

    NARCIS (Netherlands)

    Provoost, J.; Bosman, A.; Reijnders, L.; Bronders, J.; Touchant, K.; Swartjes, F.

    2010-01-01

    Background, aim and scope: Vapours of volatile organic compounds (VOCs) emanating from contaminated soils may move through the unsaturated zone to the subsurface. VOC in the subsurface can be transported to the indoor air by convective air movement through openings in the foundation and basement. On

  12. Modelling the budget of middle atmospheric water vapour isotopes

    NARCIS (Netherlands)

    Zahn, A.; Franz, P.; Bechtel, C.; Grooss, J.U.; Röckmann, T.

    2006-01-01

    A one-dimensional chemistry model is applied to study the stable hydrogen (D) and stable oxygen isotope (17O, 18O) composition of water vapour in stratosphere and mesosphere. In the troposphere, this isotope composition is determined by “physical” fractionation effects, that are phase changes (e.g.

  13. Effect of paint on vapour resistivity in plaster

    Directory of Open Access Journals (Sweden)

    de Villanueva, L.

    2008-12-01

    Full Text Available The vapour resistivity of plaster coatings such as paint and their effectiveness as water repellents were studied in several types of plaster. To this end, painted, unpainted and pigmented specimens were tested. Experimental values were collected on diffusion and vapour permeability, or its inverse, water vapour resistivity.The data obtained were very useful for evaluating moisture exchange between plaster and the surrounding air, both during initial drying and throughout the life of the material. They likewise served as a basis for ensuring the proper evacuation of water vapour in walls, and use of the capacity of the porous network in plaster products to regulate moisture content or serve as a water vapour barrier to avoid condensation.Briefly, the research showed that pigments, water-based paints and silicon-based water repellents scantly raised vapour resistance. Plastic paints, enamels and lacquers, however, respectively induced five-, ten- and twenty-fold increases in vapour resistivity, on average.Se estudia el fenómeno de la resistividad al vapor de los de yeso y el efecto impermeabilizante que producen los recubrimientos de pintura sobre diversos tipos de yeso y escayola. Para ello, se ensayan probetas desnudas y recubiertas con distintos tipos de pintura, así como coloreados en masa. Se obtienen valores experimentales de la difusividad o permeabilidad al vapor o su inverso la resistividad al vapor de agua.Los datos obtenidos son muy útiles para valorar el fenómeno del intercambio de humedad entre el yeso y el ambiente, tanto durante el proceso de su secado inicial, como en el transcurso de su vida. Así como para disponer soluciones adecuadas para la evacuación del vapor de agua a través de los cerramientos, para utilizar la capacidad de regulación de la humedad, que proporciona el entramado poroso de los productos de yeso, o para impedir el paso del vapor de agua y evitar condensaciones.Como resumen de la investigación, se

  14. Antifungal Activity of Clove Essential Oil and its Volatile Vapour Against Dermatophytic Fungi

    OpenAIRE

    2007-01-01

    Antifungal activities of clove essential oil and its volatile vapour against dermatophytic fungi including Candida albicans, Epidermophyton floccosum. Microsporum audouinii, Trichophyton mentagrophytes, and Trichophyton rubrum were investigated. Both clove essential oil and its volatile vapour strongly inhibit spore germination and mycelial growth of the dermatophytic fungi tested. The volatile vapour of clove essential oil showed fungistatic activity whereas direct application of clove essen...

  15. Vapour-liquid equilibrium relationship between toluene and mixed surfactants.

    Science.gov (United States)

    Tian, Senlin; Li, Yingjie; Mo, Hong; Ning, Ping

    2012-01-01

    Micellar partitioning of volatile organic compounds (VOCs) in surfactant solutions and its effects on vapour-liquid equilibrium is fundamental to the overall design and implementation ofsurfactant-enhanced remediation. Knowledge of the vapour-liquid equilibrium partitioning coefficients for VOCs, especially in contaminated soils and groundwater in which they exist, is required. Headspace experiments were performed to quantify the effect of three mixed surfactants, cetyltrimethyl ammonium bromide (CTMAB) with tetrabutylammonium bromide (TBAB), sodium dodecyl sulphate (SDS) with Triton X-405 (TX405), and CTMAB with Triton X-100 (TX100), on the apparent Henry's constants (Hc) of toluene at temperatures ranging from 25 degrees C to 40 degrees C. The Hc values were significantly reduced in the presence of all three mixed surfactants at concentrations above their critical micelle concentrations (CMC). Mixed micellar partitioning, showing effects on the vapour-liquid equilibrium of toluene, was primarily responsible for the significant reduction of Hc in their mixed systems. The mixed surfactants CTMAB-TX100 had the greatest effect on Hc above the CMC, followed by SDS-TX405, then CTMAB-TBAB. Mixed systems of CTMAB-TX100 decreased Hc at concentrations significantly lower than the SDS-TX405 and CTMAB-TBAB concentrations, because of to the lower CMC of CTMAB-TX100. Vapour-liquid equilibrium data were also tested against the model (Hc = H/(1 + K(X - CMC)) that described the partitioning of VOCs in vapour-water-micelle phases. The correlation of Hc with mixed surfactant concentrations (X) and CMC can be utilized as an effective tool to predict the Hc by mixed surfactants.

  16. Thermal and plasma enhanced atomic layer deposition of SiO{sub 2} using commercial silicon precursors

    Energy Technology Data Exchange (ETDEWEB)

    Putkonen, Matti, E-mail: matti.putkonen@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, Espoo (Finland); Laboratory of Inorganic Chemistry, Aalto University School of Chemical Technology, P.O. Box 16100, FI-00076, Espoo (Finland); Bosund, Markus [Beneq Oy, Ensimmäinen savu, FI-01510, Vantaa (Finland); Ylivaara, Oili M.E.; Puurunen, Riikka L.; Kilpi, Lauri; Ronkainen, Helena [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, Espoo (Finland); Sintonen, Sakari; Ali, Saima; Lipsanen, Harri [Aalto University School of Electrical Engineering, Department of Micro- and Nanosciences, P.O. Box 13500, FI-00076 Espoo (Finland); Liu, Xuwen; Haimi, Eero; Hannula, Simo-Pekka [Aalto University School of Chemical Technology, Department of Materials Science and Engineering, P.O. Box 16200, FI-00076 Espoo (Finland); Sajavaara, Timo [University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland); Buchanan, Iain; Karwacki, Eugene [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195 (United States); Vähä-Nissi, Mika [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, Espoo (Finland)

    2014-05-02

    In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R and D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O{sub 3} as oxidant and with substrates measuring 150 × 400 mm. The SiO{sub 2} film deposition rate was greatly dependent on the precursors used, highest values being 1.5–2.0 Å/cycle at 30–200 °C for one precursor with an O{sub 2} plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures. - Highlights: • SiO{sub 2} thin film is deposited by thermal and plasma enhanced atomic layer deposition (PEALD). • We report low-temperature deposition of SiO{sub 2} even at 30 °C by PEALD. • Scaling up of the atomic layer deposition processes to industrial batch is reported. • Deposited films had low low compressive residual stress and good conformality.

  17. Multivariate prediction of eight kerosene properties employing vapour-phase mid-infrared spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    M.P. Gomez-Carracedo; J.M. Andrade; M. Calvino; E. Fernandez; D. Prada; S. Muniategui [University of La Coruna, La Coruna (Spain)

    2003-07-01

    Eight physico-chemical properties of kerosene (aviation jet fuel) are predicted employing vapour-phase generation, Fourier transform mid-infrared (FT-MIR) spectra and partial least squares regression (PLS). Two devices were implemented and studied in order to generate the kerosene vapour from 100 liquid samples from a Spanish refinery. One of them is very simple whilst the other one requires thermostatic and gas flow controls. The FT-MIR spectra are recorded and used to deploy PLS models for each property (distillation curve, flash point, freezing point, percentage of aromatics and viscosity) and each device. In general, the simplest device yields the more satisfactory models. Several criteria are used to evaluate their performance: the average prediction error (corrected to take into account the error in the reference values), the F-test to assess the absence of bias in the predictions, repeatability and reproducibility. In general, all the models provide unbiased predictions, with low average errors and good precision. 31 refs., 7 figs., 2 tabs.

  18. Thermal and plasma-enhanced oxidation of ALD TiN

    NARCIS (Netherlands)

    Groenland, A.W.; Brunets, I.; Boogaard, A.; Aarnink, A.A.I.; Kovalgin, A.Y.; Schmitz, J.

    2008-01-01

    Despite its high chemical stability, sputtered stoichiometric TiN can still be oxidized at temperatures below 400 ºC, whereas a non-stoichiometric TiN is known to oxidize even at room temperature. In this work, the oxidation behaviour of thin TiN layers, realized via atomic layer deposition (ALD), i

  19. Plasma-Enhanced Combustion of Hydrocarbon Fuels and Fuel Blends Using Nanosecond Pulsed Discharges

    Energy Technology Data Exchange (ETDEWEB)

    Cappelli, Mark; Mungal, M Godfrey

    2014-10-28

    This project had as its goals the study of fundamental physical and chemical processes relevant to the sustained premixed and non-premixed jet ignition/combustion of low grade fuels or fuels under adverse flow conditions using non-equilibrium pulsed nanosecond discharges.

  20. A new test method for measuring the water vapour permeability of fabrics

    Science.gov (United States)

    Huang, Jianhua; Qian, Xiaoming

    2007-09-01

    The water vapour permeability of textile fabrics is a critical determinant of wearer comfort. Existing test methods are either time consuming or require large amounts of material. A new test apparatus was developed for characterizing the water vapour permeability of fabrics. An aluminium cylinder covered with waterproof and vapour permeable PTFE laminate is used for generating water vapour source on one side of the sample. A dry nitrogen sweep gas stream is used to carry water vapour away. The calculation of the rate of water vapour transmission across the fabric is based on the measurement of the relative humidity of the outgoing nitrogen stream. This new measuring apparatus offers a short test time and calls for a small sample size. The comparison measurements show that the test results correlated well with those obtained from ISO 11092 and ASTM E96. Therefore, this test method provides a new technique to accurately and precisely characterize the water vapour transport properties of fabrics.

  1. Removal of vapour phase PCDD/Fs in electric arc furnace steelmaking emissions by sorption using plastics.

    Science.gov (United States)

    Ooi, Tze Chean; Ewan, Bruce C R; Cliffe, Keith R; Anderson, David R; Fisher, Raymond; Thompson, Dennis

    2008-08-01

    Plastics are potentially suitable for the removal of vapour phase PCDD/Fs in emissions from the electric arc furnace (EAF) steelmaking process. Three different commercial plastics, i.e. polypropylene BE170MO (Borealis A/S, Denmark), polypropylene in the form of 5 mm spheres (The Precision Plastic Ball Co. Ltd., UK) and polyethylene LD605BA (ExxonMobil Chemical, Belgium), have been studied using a novel experimental apparatus for the removal of vapour phase PCDD/Fs. Polypropylene BE170MO was identified to be the most suitable product amongst the three plastics in terms of PCDD/F sorption and potential industrial application. The optimum temperature for PCDD/F sorption on polypropylene BE170MO was below 90 degrees C for a removal efficiency of >99% at an average vapour phase PCDD/F concentration of 3.5 ng I-TEQ/Nm(3). At 130 degrees C, 53% of the PCDD/Fs trapped on polypropylene BE170MO were desorbed.

  2. Quality changes of fresh-cut pomegranate arils during shelf life as affected by deficit irrigation and postharvest vapour treatments.

    Science.gov (United States)

    Peña-Estévez, María E; Gómez, Perla A; Artés, Francisco; Aguayo, Encarna; Martínez-Hernández, Ginés Benito; Otón, Mariano; Galindo, Alejandro; Artés-Hernández, Francisco

    2015-08-30

    The effect of two sustained deficit irrigation (SDI) strategies, compared to a control, on postharvest physicochemical, microbial, sensory quality attributes and anthocyanin content of fresh-cut pomegranates arils throughout 18 days at 5 °C was studied. Furthermore, the effect of vapour treatments (4, 7 and 10 s) compared to a conventional sanitizing treatment with NaClO on such quality parameters in combination with the preharvest treatments was also studied. According to sensory analyses, the shelf life of arils from control and SDI-irrigated fruit was established in 14 and 18 days at 5 °C, respectively, showing 4 and 7 s vapour treatment time the best sensory quality. No significant change was observed in physicochemical quality attributes, across all treatments during storage, while low microbial loads were registered (<3 log CFU g(-1)) after shelf life. Postharvest treatments that had least effect on anthocyanin content on processing day were 7 and 10 s. Vapour treatments of 7-10 s applied to pomegranate arils led to an extended shelf life up to 18 days at 5 °C with better results in SDI-irrigated samples with a water saving of 6-11%. © 2014 Society of Chemical Industry.

  3. Preparation and characterization of SiC/C/SiC composites by hybrid wet/vapour processing

    Energy Technology Data Exchange (ETDEWEB)

    Licciulli, A. [Centro Nazionale Ricerca e Sviluppo Materiali, Brindisi (Italy). PASTIS; De Riccardis, F. [Centro Nazionale Ricerca e Sviluppo Materiali, Brindisi (Italy). PASTIS; Quirini, A. [Centro Nazionale Ricerca e Sviluppo Materiali, Brindisi (Italy). PASTIS; Nannetti, C.A. [ENEA-INN-NUMA C.R. Casaccia, Roma (Italy); Filacchioni, G. [ENEA-INN-NUMA C.R. Casaccia, Roma (Italy); Pilloni, L. [ENEA-INN-NUMA C.R. Casaccia, Roma (Italy); Botti, S. [ENEA-INN-FIS C.R. Frascati, Roma (Italy); Ortona, A. [INTERNOVA, Milano (Italy); Cammarota, A. [INTERNOVA, Milano (Italy)

    1997-06-01

    In this work the preparation of ceramic matrix composites with improved mechanical properties and reduced process time and cost has been investigated. A combination of liquid and vapour infiltration processes has been developed for producing SiC(fibers)/C/SiC composites. 2D-woven Nicalon fibers were coated with pyrolitic carbon and stacked to form flat panel preforms. Chemical vapour infiltration was achieved using methyltrichlorosilane (MTS) as SiC precursor in a hot wall reactor under isothermal (1050 C) and isobaric (20torr) conditions. The solution infiltration was achieved using polycarbosilane (PCS) as SiC precursor along with laser formed SiC nanopowders. Pyrolysis was performed in inert atmosphere up to 1100 C. Various combinations of the two routes were tested in order to optimise the composite properties. A short vapour infiltration run was used to form a uniform SiC deposit on the fibers that were subsequently filled by several cycles of liquid infiltration/pyrolysis. CVI was also effective to fill the submicron porosity resulting from PCS to SiC transformation. Scanning electron microscopy (SEM) is presented for the description of the morphology of the composites. Mercury porosimetry along with SEM, was used to evaluate the infiltration yield and the quality of the deposit in the various steps of the process. The mechanical behavior of the composites was investigated by flexural tests. Fibers push-in by microindentation measurements were performed to characterize the fiber/matrix interface and to investigate how it is affected by the pyrocarbon coating on the fibers. On the basis of the obtained results, a preparative process for SiC/SiC composites can be optimized by the proper use of both liquid and vapour infiltration. (orig.)

  4. Air sampling and determination of vapours and aerosols of bitumen and polycyclic aromatic hydrocarbons in the Human Bitumen Study.

    Science.gov (United States)

    Breuer, Dietmar; Hahn, Jens-Uwe; Höber, Dieter; Emmel, Christoph; Musanke, Uwe; Rühl, Reinhold; Spickenheuer, Anne; Raulf-Heimsoth, Monika; Bramer, Rainer; Seidel, Albrecht; Schilling, Bernd; Heinze, Evelyn; Kendzia, Benjamin; Marczynski, Boleslaw; Welge, Peter; Angerer, Jürgen; Brüning, Thomas; Pesch, Beate

    2011-06-01

    The chemical complexity of emissions from bitumen applications is a challenge in the assessment of exposure. Personal sampling of vapours and aerosols of bitumen was organized in 320 bitumen-exposed workers and 69 non-exposed construction workers during 2001-2008. Area sampling was conducted at 44 construction sites. Area and personal sampling of vapours and aerosols of bitumen showed similar concentrations between 5 and 10 mg/m(3), while area sampling yielded higher concentrations above the former occupational exposure limit (OEL) of 10 mg/m(3). The median concentration of personal bitumen exposure was 3.46 mg/m(3) (inter-quartile range 1.80-5.90 mg/m(3)). Only few workers were exposed above the former OEL. The specificity of the method measuring C-H stretch vibration is limited. This accounts for a median background level of 0.20 mg/m³ in non-exposed workers which is likely due to ubiquitous aliphatic hydrocarbons. Further, area measurements of polycyclic aromatic hydrocarbons (PAHs) were taken at 25 construction sites. U.S. EPA PAHs were determined with GC/MS, with the result of a median concentration of 2.47 μg/m(3) at 15 mastic asphalt worksites associated with vapours and aerosols of bitumen, with a Spearman correlation coefficient of 0.45 (95% CI -0.13 to 0.78). PAH exposure at mastic-asphalt works was higher than at reference worksites (median 0.21 μg/m(3)), but about one order of magnitude lower compared to coke-oven works. For a comparison of concentrations of vapours and aerosols of bitumen and PAHs in asphalt works, differences in sampling and analytical methods must to be taken into account.

  5. Mapping of tritium emissions using absorption vapour samplers.

    Science.gov (United States)

    Vodila, Gergely; Molnár, Mihály; Veres, Mihály; Svingor, Eva; Futó, István; Barnabás, István; Kapitány, Sándor

    2009-02-01

    Püspökszilágy Radioactive Waste Treatment and Disposal Facility (RWTDF) is a typical near-surface engineered repository designated to store low- and intermediate-level wastes from various institutes, research facilities and hospitals in Hungary. Two automatic combined (14)C-tritium sampling units installed at the facility sample the air 2 m above surface. The one installed near the vaults detects tritium (T) activities two orders of magnitude higher than the far reference sampling unit. To localize the T emissions, 19 small absorption vapour samplers filled with silica gel were settled onto the ground surface. After the saturation of the silica gel, the water was recovered and its T concentration was measured with a low-background liquid scintillation counter. The absorption vapour samplers are cheap, simple and easy-to-use. We present the samplers and the T distribution map constructed from the data, which helps to localize the T emission.

  6. Vapour pressure and enthalpy of vaporization of aliphatic dialkyl carbonates

    Energy Technology Data Exchange (ETDEWEB)

    Kozlova, Svetlana A.; Emel' yanenko, Vladimir N.; Georgieva, Miglena [Department of Physical Chemistry, University of Rostock, Hermannstrasse 14, D-18051 Rostock (Germany); Verevkin, Sergey P. [Department of Physical Chemistry, University of Rostock, Hermannstrasse 14, D-18051 Rostock (Germany)], E-mail: sergey.verevkin@uni-rostock.de; Chernyak, Yury [Huntsman Corporation, Advanced Technology Center, 8600 Gosling Road, The Woodlands, TX 77381 (United States); Schaeffner, Benjamin; Boerner, Armin [Leibniz Institut fuer Katalyse an der Universitaet Rostock e.V., Albert-Einstein Strasse 29a, 18059 Rostock (Germany)

    2008-07-15

    Molar enthalpies of vaporization of aliphatic alkyl carbonates: dimethyl carbonate [616-38-6], diethyl carbonate [105-58-8], di-n-propyl carbonate [623-96-1], di-n-butyl carbonate [542-52-9], and dibenzyl carbonate [3459-92-5] were obtained from the temperature dependence of the vapour pressure measured by the transpiration method. A large number of the primary experimental results on temperature dependences of vapour pressures have been collected from the literature and have been treated uniformly in order to derive vaporization enthalpies of dialkyl carbonates at the reference temperature 298.15 K. An internal consistency check was performed on enthalpy of vaporization values for dialkyl carbonates studied in this work.

  7. Study of vapour pressure of lithium nitrate solutions in ethanol

    Energy Technology Data Exchange (ETDEWEB)

    Verevkin, Sergey [Abteilung Physikalische Chemie, Institut fuer Chemie, Universitaet Rostock, Hermannstrasse, 14, D-18055 Rostock (Germany); Safarov, Javid [Heat and Refrigeration Techniques, Azerbaijan Technical University, H. Javid Avn. 25, AZ1073 Baku (Azerbaijan)]. E-mail: javids@azdata.net; Bich, Eckard [Abteilung Physikalische Chemie, Institut fuer Chemie, Universitaet Rostock, Hermannstrasse, 14, D-18055 Rostock (Germany); Hassel, Egon [Lehrstuhl fuer Technische Thermodynamik, Fakultaet Maschinenbau und Schiffstechnik, Universitaet Rostock, Albert-Einstein-Str. 2, D-18059 Rostock (Germany); Heintz, Andreas [Abteilung Physikalische Chemie, Institut fuer Chemie, Universitaet Rostock, Hermannstrasse, 14, D-18055 Rostock (Germany)

    2006-05-15

    Vapour pressure p of (LiNO{sub 3} + C{sub 2}H{sub 5}OH) solutions at T = (298.15 to 323.15) K were measured, osmotic, activity coefficients ({phi}, {gamma}) and activity of solvent a {sub s} have been evaluated. The experiments were carried out in the molality range m = (0.19125 to 2.21552) mol . kg{sup -1}. The Antoine equation was used for the empirical description of the experimental vapour pressure results and the (Pitzer + Mayorga) model with inclusion of Archer's ionic strength dependence of the third virial coefficient for the calculated osmotic coefficients were used. The parameters of the Archer for the extended Pitzer model was used for the evaluation of activity coefficients.

  8. Room temperature radio-frequency plasma-enhanced pulsed laser deposition of ZnO thin films

    Science.gov (United States)

    Huang, S.-H.; Chou, Y.-C.; Chou, C.-M.; Hsiao, V. K. S.

    2013-02-01

    In this study, we compared the crystalline structures, optical properties, and surface morphologies of ZnO thin films deposited on silicon and glass substrates by conventional pulsed laser deposition (PLD) and radio-frequency (RF) plasma-enhanced PLD (RF-PEPLD). The depositions were performed at room temperature under 30-100 mTorr pressure conditions. The RF-PEPLD process was found to have deposited a ZnO structure with preferred (0 0 2) c-axis orientation at a higher deposition rate; however, the RF-PEPLD process generated more defects in the thin films. The application of oxygen pressure to the RF-PEPLD process reduced defects effectively and also increased the deposition rate.

  9. Plasma-Enhanced Atomic Layer Deposition (PEALD of TiN using the Organic Precursor Tetrakis(ethylmethylamidoTitanium (TEMAT

    Directory of Open Access Journals (Sweden)

    Chen Z.X.

    2016-01-01

    Full Text Available This paper presents the plasma-enhanced atomic layer deposition (PEALD of titanium nitride (TiN using the organic precursor tetrakis(ethylmethylamidotitanium (TEMAT, with remote ammonia (NH3 plasma as reactant gas. This work investigates the impact of substrate temperature, from 150-350°C, and plasma times, from 5-30s, on deposition rate, resistivity, carbon content, N/Ti ratio and film density. The lowest resistivity of ~ 250 μΩ.cm was achieved at substrate temperatures 300-350°C and plasma time of 20s. At low substrate temperatures, although deposition was possible, carbon concentration was found to be higher, which thus affects film resistivity and density.

  10. Navier slip model of drag reduction by Leidenfrost vapour layers

    OpenAIRE

    Berry, Joseph D; Vakarelski, Ivan U.; Chan, Derek Y. C.; Thoroddsen, Sigurdur T.

    2016-01-01

    Recent experiments found that a hot solid sphere that is able to sustain a stable Leidenfrost vapour layer in a liquid exhibits significant drag reduction during free fall. The variation of the drag coefficient with Reynolds number shows substantial deviation from the characteristic drag crisis behavior at high Reynolds numbers. Results obtained with liqiuds of different viscosities show that onset of the drag crisis depends on the viscosity ratio of the vapor to the liquid. The key feature o...

  11. Relaxation of quadrupole orientation in an optically pumped alkali vapour

    Energy Technology Data Exchange (ETDEWEB)

    Bernabeu, E.; Tornos, J.

    1985-04-01

    The relaxation of quadrupole orientation (alignment) in an optically pumped alkali vapour is theoretically studied by taking into account the relaxation processes by alkali-buffer gas, alkali-alkali with spin exchange and alkali-cell wall (diffusion process) collisions. The relaxation transients of the quadrupole orientation are obtained by introducing a first-order weak-pumping approximation (intermediate pumping) less restrictive than the usually considered (zeroth order) one.

  12. Combined Dial Sounding of Ozone, Water Vapour and Aerosol

    OpenAIRE

    Trickl Thomas; Vogelmann Hannes

    2016-01-01

    Routine high-quality lidar measurements of ozone, water vapour and aerosol at Garmisch-Partenkirchen since 2007 have made possible more comprehensive atmospheric studies and lead to a growing insight concerning the most frequently occurring long-range transport pathways. In this contribution we present as examples results on stratospheric layers travelling in the free troposphere for extended periods of time without eroding. In particular, we present a case of an intrusion layer that subsided...

  13. Probabilistic risk assessment for six vapour intrusion algorithms

    OpenAIRE

    Provoost, J.; Reijnders, L.; Bronders, J.; Van Keer, I.; Govaerts, S.

    2014-01-01

    A probabilistic assessment with sensitivity analysis using Monte Carlo simulation for six vapour intrusion algorithms, used in various regulatory frameworks for contaminated land management, is presented here. In addition a deterministic approach with default parameter sets is evaluated against observed concentrations for benzene, ethylbenzene and trichloroethylene. The screening-level algorithms are ranked according to accuracy and conservatism in predicting observed soil air and indoor air ...

  14. Nonequilibrium study of the intrinsic free-energy profile across a liquid-vapour interface

    Energy Technology Data Exchange (ETDEWEB)

    Braga, Carlos, E-mail: ccorreia@imperial.ac.uk; Muscatello, Jordan, E-mail: jordan.muscatello@imperial.ac.uk; Lau, Gabriel, E-mail: gabriel.lau07@imperial.ac.uk; Müller, Erich A., E-mail: e.muller@imperial.ac.uk; Jackson, George, E-mail: g.jackson@imperial.ac.uk [Department of Chemical Engineering, Imperial College London, South Kensington Campus, London SW72AZ (United Kingdom)

    2016-01-28

    We calculate an atomistically detailed free-energy profile across a heterogeneous system using a nonequilibrium approach. The path-integral formulation of Crooks fluctuation theorem is used in conjunction with the intrinsic sampling method to calculate the free-energy profile for the liquid-vapour interface of the Lennard-Jones fluid. Free-energy barriers are found corresponding to the atomic layering in the liquid phase as well as a barrier associated with the presence of an adsorbed layer as revealed by the intrinsic density profile. Our findings are in agreement with profiles calculated using Widom’s potential distribution theorem applied to both the average and the intrinsic profiles as well as the literature values for the excess chemical potential.

  15. Structure and properties of molecular and ionic clusters in vapour over caesium fluoride

    Science.gov (United States)

    Mwanga, Stanley F.; Pogrebnaya, Tatiana P.; Pogrebnoi, Alexander M.

    2015-06-01

    The properties of neutral molecules Cs2F2, Cs3F3, and Cs4F4, and positive and negative cluster ions Cs2F+, CsF2-, Cs3F2+, Cs2F3-, Cs4F3+, and Cs5F4+ were studied by several of quantum chemical methods implementing density function theory and Möller-Plesset perturbation theory of second and fourth orders. For all species, the equilibrium geometrical structure and vibrational spectra were determined. Different isomers have been revealed for the trimer neutral molecule Cs3F3; pentaatomic, both positive and negative, Cs3F2+, Cs2F3-; and heptaatomic Cs4F3+ ions. The most abundant isomers in the saturated vapour were determined. Enthalpies of dissociation reactions and enthalpies of formation of the species were obtained.

  16. Standardisation of a Vapour Generator for Calibration of Environmental Monitoring Instruments

    Directory of Open Access Journals (Sweden)

    Parul Rana

    2003-10-01

    Full Text Available Very low vapour pressure of 2,4,6 trinitrotoulene (TNT yields extremely low vapour concentrations at different flow rates in the air, yet considerable quantity of vapours and TNTdust during handling may be present at the workplace environment which is harmful to the health of the personnel working there. The explosive vapours, such as TNT,  2,6-dinitrotoluene (DNT, etc., though harmful to the health of the personnel, are not covered either in the emission standards or in the ambient air quality standards. Presently, no instrument is available for air monitoring of TNT vapours. These vapours need to be collected on-site to estimate TNT concentration. Realising the need for real-time air monitoring of TNT, efforts have been made to understand and device an instrument for on-site determination of TNT vapours parts per billiion (ppb range. Low-level TNT vapours and TNT buried in the soil in military operations are required to be detected. The instruments for this require careful calibration to yield accurate and reliable results. Hence, an effort has been made to develop a trace-level ppb vapour generator. The vapour generator of a spiral glass column of length 170 cm and inner diameter 4 mm 2 0.5 mm has been used. An activated charcoal glass tube has been used for sampling TNT vapours. The adsorbed TNT vapours were desorbed and analysed using high performance liquid chromatography. Thesolid support used has been studied. These vapours generated at different flow rates have been evaluated. The calibrated instrument can be used for in situ and on-site analysis of samples of TNT and also for samples collected.

  17. Influence of water and water vapour on the characteristics of KI treated HgI 2 detectors

    Science.gov (United States)

    Ponpon, J. P.; Amann, M.; Sieskind, M.

    After being cleaned using a potassium iodide solution in water followed by a water rinse, the surface of mercuric iodide is covered by a chemical complex identified as being KHgI 3·H 2O. This compound can adsorb large quantities of water and its electrical properties are strongly sensitive to water and water vapour. The consequences on the manufacturing and storing conditions (especially the relative humidity), of mercuric iodide-based devices are therefore of great concern. They are illustrated by the study of the electrical and spectrometric properties of HgI 2 nuclear radiation detectors.

  18. Factors affecting release of ethanol vapour in active modified atmosphere packaging systems for horticultural products

    Directory of Open Access Journals (Sweden)

    Weerawate Utto

    2014-04-01

    Full Text Available The active modified atmosphere packaging (active MAP system , which provides interactive postharvest control , using ethanol vapour controlled release, is one of the current interests in the development of active packaging for horticultural products. A number of published research work have discussed the relationship between the effectiveness of ethanol vapour and its concentration in the package headspace, including its effect on postharvest decay and physiological controls. This is of importance because a controlled release system should release and maintain ethanol vapour at effective concentrations during the desired storage period. A balance among the mass transfer processes of ethanol vapour in the package results in ethanol vapour accumulation in the package headspace. Key factors affecting these processes include ethanol loading, packaging material, packaged product and storage environment (temperature and relative h umidity. This article reviews their influences and discusses future work required to better understand their influences on ethanol vapour release and accumulations in active MAP.

  19. Global distributions of water vapour isotopologues retrieved from IMG/ADEOS data

    Directory of Open Access Journals (Sweden)

    H. Herbin

    2007-07-01

    Full Text Available The isotopologic composition of water vapour in the atmosphere provides valuable information on many climate, chemical and dynamical processes. The accurate measurements of the water isotopologues by remote-sensing techniques remains a challenge, due to the large spatial and temporal variations. Simultaneous profile retrievals of the main water isotopologues (i.e. H216O, H218O and HDO and their ratios are presented here for the first time, along their retrieved global distributions. The results are obtained by exploiting the high resolution infrared spectra recorded by the Interferometric Monitor for Greenhouse gases (IMG instrument, which has operated in the nadir geometry onboard the ADEOS satellite between 1996 and 1997. The retrievals are performed on cloud-free radiances, measured during ten days of April 1997, considering two atmospheric windows (1205–1228 cm−1; 2004–2032 cm−1 and using a line-by-line radiative transfer model and an inversion procedure based on the Optimal Estimation Method (OEM. Characterizations in terms of vertical sensitivity and error budget are provided. We show that a relatively high vertical resolution is achieved for H216O (~4–5 km, and that the retrieved profiles are in fair agreement with local sonde measurements, at different latitudes. The retrieved global distributions of H216O, H218O, HDO and their ratios are presented and found to be consistent with previous experimental studies and models. The Ocean-Continent difference, the latitudinal and vertical dependence of the water vapour amount and the isotopologic depletion are notably well reproduced. Others trends, possibly related to small-scale variations in the vertical profiles are also discussed. Despite the difficulties encountered for computing accurately the isotopologic ratios, our results demonstrate the ability

  20. The Seasonal Cycle of Water Vapour on Mars from Assimilation of Thermal Emission Spectrometer Data

    Science.gov (United States)

    Steele, Liam J.; Lewis, Stephen R.; Patel, Manish R.; Montmessin, Franck; Forget, Francois; Smith, Michael D.

    2014-01-01

    We present for the first time an assimilation of Thermal Emission Spectrometer (TES) water vapour column data into a Mars global climate model (MGCM). We discuss the seasonal cycle of water vapour, the processes responsible for the observed water vapour distribution, and the cross-hemispheric water transport. The assimilation scheme is shown to be robust in producing consistent reanalyses, and the global water vapour column error is reduced to around 2-4 pr micron depending on season. Wave activity is shown to play an important role in the water vapour distribution, with topographically steered flows around the Hellas and Argyre basins acting to increase transport in these regions in all seasons. At high northern latitudes, zonal wavenumber 1 and 2 stationary waves during northern summer are responsible for spreading the sublimed water vapour away from the pole. Transport by the zonal wavenumber 2 waves occurs primarily to the west of Tharsis and Arabia Terra and, combined with the effects of western boundary currents, this leads to peak water vapour column abundances here as observed by numerous spacecraft. A net transport of water to the northern hemisphere over the course of one Mars year is calculated, primarily because of the large northwards flux of water vapour which occurs during the local dust storm around L(sub S) = 240-260deg. Finally, outlying frost deposits that surround the north polar cap are shown to be important in creating the peak water vapour column abundances observed during northern summer.