WorldWideScience

Sample records for plasma-assisted physical vapor

  1. Low temperature metal free growth of graphene on insulating substrates by plasma assisted chemical vapor deposition

    Science.gov (United States)

    Muñoz, R.; Munuera, C.; Martínez, J. I.; Azpeitia, J.; Gómez-Aleixandre, C.; García-Hernández, M.

    2017-03-01

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650 °C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

  2. Microwave plasma-assisted chemical vapor deposition of porous carbon film as supercapacitive electrodes

    Science.gov (United States)

    Wu, Ai-Min; Feng, Chen-Chen; Huang, Hao; Paredes Camacho, Ramon Alberto; Gao, Song; Lei, Ming-Kai; Cao, Guo-Zhong

    2017-07-01

    Highly porous carbon film (PCF) coated on nickel foam was prepared successfully by microwave plasma-assisted chemical vapor deposition (MPCVD) with C2H2 as carbon source and Ar as discharge gas. The PCF is uniform and dense with 3D-crosslinked nanoscale network structure possessing high degree of graphitization. When used as the electrode material in an electrochemical supercapacitor, the PCF samples verify their advantageous electrical conductivity, ion contact and electrochemical stability. The test results show that the sample prepared under 1000 W microwave power has good electrochemical performance. It displays the specific capacitance of 62.75 F/g at the current density of 2.0 A/g and retains 95% of its capacitance after 10,000 cycles at the current density of 2.0 A/g. Besides, its near-rectangular shape of the cyclic voltammograms (CV) curves exhibits typical character of an electric double-layer capacitor, which owns an enhanced ionic diffusion that can fit the requirements for energy storage applications.

  3. Properties of plasma assisted chemical vapor deposited coatings of titanium boride on Ti--6Al--4V alloy substrates

    International Nuclear Information System (INIS)

    Otter, F.A.; Amisola, G.B.; Roman, W.C.; Hay, S.O.

    1992-01-01

    Coatings prepared in a radio-frequency-plasma (plasma assisted chemical vapor deposition) reactor employing in situ laser diagnostics have been tested and characterized. Detailed characterization studies are important to relate gas phase laser diagnostic studies and concurrent heterogeneous modeling efforts to coating characteristics. Establishing how deposition conditions are correlated with coating properties is expected to provide needed methodology for scale up of applications in the hard face protective coating area. After a brief discussion of preparation conditions and mechanical test results, we present results of chemical and physical measurements on these coatings. Measurement techniques include x-ray diffraction, Dektak surface roughness, scanning tunneling microscopy, scanning electron microscopy, and SEI, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and Rutherford backscattering spectroscopy. The coatings (∼20 μm thick) are very hard (40 GPa at depths over 100 nm), adherent (60 N on scratch test), and sand erosion resistant (>40x as durable as Ti-6Al-4V). They are highly oriented with the c axis (hexagonal-close-packed) normal to the coating surface, rough (∼1 μm), and off-stoichiometry (TiB 2.2 )

  4. Properties of Erbium Doped Hydrogenated Amorphous Carbon Layers Fabricated by Sputtering and Plasma Assisted Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    V. Prajzler

    2008-01-01

    Full Text Available We report about properties of carbon layers doped with Er3+ ions fabricated by Plasma Assisted Chemical Vapor Deposition (PACVD and by sputtering on silicon or glass substrates. The structure of the samples was characterized by X-ray diffraction and their composition was determined by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The Absorbance spectrum was taken in the spectral range from 400 nm to 600 nm. Photoluminescence spectra were obtained using two types of Ar laser (λex=514.5 nm, lex=488 nm and also using a semiconductor laser (λex=980 nm. Samples fabricated by magnetron sputtering exhibited typical emission at 1530 nm when pumped at 514.5 nm. 

  5. Time-Resolved Quantum Cascade Laser Absorption Spectroscopy of Pulsed Plasma Assisted Chemical Vapor Deposition Processes Containing BCl3

    Science.gov (United States)

    Lang, Norbert; Hempel, Frank; Strämke, Siegfried; Röpcke, Jürgen

    2011-08-01

    In situ measurements are reported giving insight into the plasma chemical conversion of the precursor BCl3 in industrial applications of boriding plasmas. For the online monitoring of its ground state concentration, quantum cascade laser absorption spectroscopy (QCLAS) in the mid-infrared spectral range was applied in a plasma assisted chemical vapor deposition (PACVD) reactor. A compact quantum cascade laser measurement and control system (Q-MACS) was developed to allow a flexible and completely dust-sealed optical coupling to the reactor chamber of an industrial plasma surface modification system. The process under the study was a pulsed DC plasma with periodically injected BCl3 at 200 Pa. A synchronization of the Q-MACS with the process control unit enabled an insight into individual process cycles with a sensitivity of 10-6 cm-1·Hz-1/2. Different fragmentation rates of the precursor were found during an individual process cycle. The detected BCl3 concentrations were in the order of 1014 molecules·cm-3. The reported results of in situ monitoring with QCLAS demonstrate the potential for effective optimization procedures in industrial PACVD processes.

  6. Physical model for vaporization

    OpenAIRE

    Garai, Jozsef

    2006-01-01

    Based on two assumptions, the surface layer is flexible, and the internal energy of the latent heat of vaporization is completely utilized by the atoms for overcoming on the surface resistance of the liquid, the enthalpy of vaporization was calculated for 45 elements. The theoretical values were tested against experiments with positive result.

  7. Carbon diffusion in uncoated and titanium nitride coated iron substrates during microwave plasma assisted chemical vapor deposition of diamond

    International Nuclear Information System (INIS)

    Weiser, P.S.; Prawer, S.; Manory, R.R.; Paterson, P.J.K.; Stuart, Sue-Anne

    1992-01-01

    Auger Electron Spectroscopy has been employed to investigate the effectiveness of thin films of TiN as barriers to carbon diffusion during Chemical Vapor Deposition (CVD) of diamond onto Fe substrates. Auger Depth Profiling was used to monitor the C concentration in the TiN layer, through the interface and into the substrate both before and after CVD diamond deposition. The results show that a layer of TiN only 250 Angstroems thick is sufficient to inhibit soot formation on the Fe surface and C diffusion into the Fe bulk. 14 refs., 4 figs

  8. Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); Patil, Sandip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Kim, Tae-Gyu [Department of Nano System and Process Engineering, Pusan National University, 50 Cheonghak-ri, Samrangjin-eup, Miryang, Gyeongnam, Pusan 627-706 (Korea, Republic of); Yonekura, Daisuke [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); More, Mahendra A., E-mail: mam@physics.unipune.ac.in [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Joag, Dilip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.jp [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan)

    2011-01-01

    Boron doped diamond films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of B{sub 2}O{sub 3} concentration varied from 1000 to 5000 ppm on the field emission characteristics was examined. The surface morphology and quality of films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. The surface morphology obtained by SEM showed variation from facetted microcrystal covered with nanometric grains to cauliflower of nanocrystalline diamond (NCD) particles with increasing B{sub 2}O{sub 3} concentration. The Raman spectra confirm the formation of NCD films. The field emission properties of NCD films were observed to improve upon increasing boron concentration. The values of the onset field and threshold field are observed to be as low as 0.36 and 0.08 V/{mu}m, respectively. The field emission current stability investigated at the preset value of {approx}1 {mu}A is observed to be good, in each case. The enhanced field emission properties are attributed to the better electrical conductivity coupled with the nanometric features of the diamond films.

  9. Determining the microwave coupling and operational efficiencies of a microwave plasma assisted chemical vapor deposition reactor under high pressure diamond synthesis operating conditions

    Energy Technology Data Exchange (ETDEWEB)

    Nad, Shreya [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States); Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824 (United States); Gu, Yajun; Asmussen, Jes [Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)

    2015-07-15

    The microwave coupling efficiency of the 2.45 GHz, microwave plasma assisted diamond synthesis process is investigated by experimentally measuring the performance of a specific single mode excited, internally tuned microwave plasma reactor. Plasma reactor coupling efficiencies (η) > 90% are achieved over the entire 100–260 Torr pressure range and 1.5–2.4 kW input power diamond synthesis regime. When operating at a specific experimental operating condition, small additional internal tuning adjustments can be made to achieve η > 98%. When the plasma reactor has low empty cavity losses, i.e., the empty cavity quality factor is >1500, then overall microwave discharge coupling efficiencies (η{sub coup}) of >94% can be achieved. A large, safe, and efficient experimental operating regime is identified. Both substrate hot spots and the formation of microwave plasmoids are eliminated when operating within this regime. This investigation suggests that both the reactor design and the reactor process operation must be considered when attempting to lower diamond synthesis electrical energy costs while still enabling a very versatile and flexible operation performance.

  10. Characterisation of Pristine and Recoated electron beam evaporation plasma-assisted physical vapour deposition Cr-N coatings on AISI M2 steel and WC-Co substrates

    International Nuclear Information System (INIS)

    Avelar-Batista, J.C.; Spain, E.; Housden, J.; Fuentes, G.G.; Rebole, R.; Rodriguez, R.; Montala, F.; Carreras, L.J.; Tate, T.J.

    2005-01-01

    This paper is focussed on the characterisation of electron beam evaporation plasma-assisted physical vapour deposition Cr-N coatings deposited on AISI M2 steel and hardmetal (K10) substrates in two different conditions: Pristine (i.e., coated) and Recoated (i.e., stripped and recoated). Analytical methods, including X-ray diffraction (XRD), scanning electron microscopy, scratch adhesion and pin-on-disc tests were used to evaluate several coating properties. XRD analyses indicated that both Pristine and Recoated coatings consisted of a mixture of hexagonal Cr 2 N and cubic CrN, regardless of substrate type. For the M2 steel substrate, only small differences were found in terms of coating phases, microstructure, adhesion, friction and wear coefficients between Pristine and Recoated. Recoated on WC-Co (K10) exhibited a less dense microstructure and significant inferior adhesion compared to Pristine on WC-Co (K10). The wear coefficient of Recoated on WC-Co was 100 times higher than those exhibited by all other specimens. The results obtained confirm that the stripping process did not adversely affect the Cr-N properties when this coating was deposited onto M2 steel substrates, but it is clear from the unsatisfactory tribological performance of Recoated on WC-Co that the stripping process is unsuitable for hardmetal substrates

  11. Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

    KAUST Repository

    Hussain, Aftab M.

    2013-08-16

    We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Physical Vapor Deposition of Thin Films

    Science.gov (United States)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  13. Modeling of Plasma Assisted Combustion

    Science.gov (United States)

    Akashi, Haruaki

    2012-10-01

    Recently, many experimental study of plasma-assisted combustion has been done. However, numerous complex reactions in combustion of hydrocarbons are preventing from theoritical study for clarifying inside the plasma-assisted combustion, and the effect of plasma-assist is still not understood. Shinohara and Sasaki [1,2] have reported that the shortening of flame length by irradiating microwave without increase of gas temperature. And they also reported that the same phenomena would occur when applying dielectric barrier discharges to the flame using simple hydrocarbon, methane. It is suggested that these phenomena may result by the electron heating. To clarify this phenomena, electron behavior under microwave and DBD was examined. For the first step of DBD plasma-assisted combustion simulation, electron Monte Carlo simulation in methane, oxygen and argon mixture gas(0.05:0.14:0.81) [2] has been done. Electron swarm parameters are sampled and electron energy distribution function (EEDF)s are also determined. In the combustion, gas temperature is higher(>1700K), so reduced electric field E/N becomes relatively high(>10V/cm/Torr). The electrons are accelerated to around 14 eV. This result agree with the optical emission from argon obtained by the experiment of reference [2]. Dissociation frequency of methane and oxygens are obtained in high. This might be one of the effect of plasma-assist. And it is suggested that the electrons should be high enough to dissociate methane, but plasma is not needed.[4pt] [1] K. Shinohara et al, J. Phys. D:Appl. Phys., 42, 182008 (1-7) (2009).[0pt] [2] K. Sasaki, 64th Annual Gaseous Electronic Conference, 56, 15 CT3.00001(2011).

  14. Design and physical features of inductive coaxial copper vapor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Batenin, V. M. [Russian Academy of Sciences, Joint Institute for High Temperatures (Russian Federation); Kazaryan, M. A. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Karpukhin, V. T. [Russian Academy of Sciences, Joint Institute for High Temperatures (Russian Federation); Lyabin, N. A. [Istok Research and Production Corporation (Russian Federation); Malikov, M. M., E-mail: mmalikov@oivtran.ru [Russian Academy of Sciences, Joint Institute for High Temperatures (Russian Federation)

    2016-11-15

    A physical model of a copper vapor laser pumped by a pulse-periodic inductive (electrodeless) discharge is considered. The feasibility of efficient laser pumping by an inductive discharge and reaching high output parameters comparable to those of conventional copper vapor lasers pumped by a longitudinal electrode discharge is demonstrated. The design and physical features of an inductive copper vapor laser with an annular working volume are discussed.

  15. Plasma assisted heat treatment: annealing

    International Nuclear Information System (INIS)

    Brunatto, S F; Guimaraes, N V

    2009-01-01

    This work comprises a new dc plasma application in the metallurgical-mechanical field, called plasma assisted heat treatment, and it presents the first results for annealing. Annealing treatments were performed in 90% reduction cold-rolled niobium samples at 900 deg. C and 60 min, in two different heating ways: (a) in a hollow cathode discharge (HCD) configuration and (b) in a plasma oven configuration. The evolution of the samples' recrystallization was determined by means of the microstructure, microhardness and softening rate characterization. The results indicate that plasma species (ions and neutrals) bombardment in HCD plays an important role in the recrystallization process activation and could lead to technological and economical advantages considering the metallic materials' heat treatment application. (fast track communication)

  16. Plasma and Ion Assistance in Physical Vapor Deposition: AHistorical Perspective

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2007-02-28

    Deposition of films using plasma or plasma-assist can betraced back surprisingly far, namely to the 18th century for arcs and tothe 19th century for sputtering. However, only since the 1960s thecoatings community considered other processes than evaporation for largescale commercial use. Ion Plating was perhaps the first importantprocess, introducing vapor ionization and substrate bias to generate abeam of ions arriving on the surface of the growing film. Ratherindependently, cathodic arc deposition was established as an energeticcondensation process, first in the former Soviet Union in the 1970s, andin the 1980s in the Western Hemisphere. About a dozen various ion-basedcoating technologies evolved in the last decades, all characterized byspecific plasma or ion generation processes. Gridded and gridless ionsources were taken from space propulsion and applied to thin filmdeposition. Modeling and simulation have helped to make plasma and ionseffects to be reasonably well understood. Yet--due to the complex, oftennon-linear and non-equilibrium nature of plasma and surfaceinteractions--there is still a place for the experience plasma"sourcerer."

  17. Enthalpy of Vaporization by Gas Chromatography: A Physical Chemistry Experiment

    Science.gov (United States)

    Ellison, Herbert R.

    2005-01-01

    An experiment is conducted to measure the enthalpy of vaporization of volatile compounds like methylene chloride, carbon tetrachloride, and others by using gas chromatography. This physical property was measured using a very tiny quantity of sample revealing that it is possible to measure the enthalpies of two or more compounds at the same time.

  18. Synthesis of nanocrystalline Cu1-xTax composites using physical vapor deposition

    International Nuclear Information System (INIS)

    Savage, H.S.; Wang, H.; Rigsbee, J.M.

    1993-01-01

    Physical vapor deposition (PVD) processes provide the capability for creating new types of metallic, ceramic, and polymeric composites by allowing atomic-scale engineering of structure and chemistry. Because PVD processes provide the capacity for circumventing thermodynamic factors, such as solubility limits, it is possible to produce nonequilibrium alloys and materials with unique mixtures of phases. The ease by which PVD produces materials with nanocrystalline microstructures is an added benefit of these processes. This paper describes ion plating, a plasma-assisted PVD process, and its application for the development of a new class of nanoscale dispersion-strengthened Cu 1-x Ta x alloys. Copper-tantalum was selected as a model system because the extensive liquid miscibility gap and nearly zero mutual solid solubilities prevent creation of Cu-Ta alloys by conventional or rapid solidification processes. Microchemical analyses of the family of Cu 1-x Ta x alloys indicate that PVD can produce materials with any desired level of Ta. X-ray diffraction and transmission electron microscopy analyses show that the as-deposited microstructures consist generally of a Cu matrix supersaturated with Ta and containing a uniform dispersion of Ta particles with diameters below 10 nm. The Ta particles are face centered cubic (exceptionally large Ta particles, larger than ∼100 nm, are body centered cubic) and are oriented identically with the Cu matrix. Particle coarsening studies, at temperatures up to 900C and for times as long as 100 hours, indicate an extreme degree of microstructural stability. The Ta particles also appear highly effective at maintaining a submicron Cu matrix grain size even after annealing at 900C

  19. Plasma-assisted synthesis of MoS2

    Science.gov (United States)

    Campbell, Philip M.; Perini, Christopher J.; Chiu, Johannes; Gupta, Atul; Ray, Hunter S.; Chen, Hang; Wenzel, Kevin; Snyder, Eric; Wagner, Brent K.; Ready, Jud; Vogel, Eric M.

    2018-03-01

    There has been significant interest in transition metal dichalcogenides (TMDs), including MoS2, in recent years due to their potential application in novel electronic and optical devices. While synthesis methods have been developed for large-area films of MoS2, many of these techniques require synthesis temperatures of 800 °C or higher. As a result of the thermal budget, direct synthesis requiring high temperatures is incompatible with many integrated circuit processes as well as flexible substrates. This work explores several methods of plasma-assisted synthesis of MoS2 as a way to lower the synthesis temperature. The first approach used is conversion of a naturally oxidized molybdenum thin film to MoS2 using H2S plasma. Conversion is demonstrated at temperatures as low as 400 °C, and the conversion is enabled by hydrogen radicals which reduce the oxidized molybdenum films. The second method is a vapor phase reaction incorporating thermally evaporated MoO3 exposed to a direct H2S plasma, similar to chemical vapor deposition (CVD) synthesis of MoS2. Synthesis at 400 °C results in formation of super-stoichiometric MoS2 in a beam-interrupted growth process. A final growth method relies on a cyclical process in which a small amount of Mo is sputtered onto the substrate and is subsequently sulfurized in a H2S plasma. Similar results could be realized using an atomic layer deposition (ALD) process to deposit the Mo film. Compared to high temperature synthesis methods, the lower temperature samples are lower quality, potentially due to poor crystallinity or higher defect density in the films. Temperature-dependent conductivity measurements are consistent with hopping conduction in the plasma-assisted synthetic MoS2, suggesting a high degree of disorder in the low-temperature films. Optimization of the plasma-assisted synthesis process for slower growth rate and better stoichiometry is expected to lead to high quality films at low growth temperature.

  20. TOPICAL REVIEW: Plasma assisted ignition and combustion

    Science.gov (United States)

    Starikovskaia, S. M.

    2006-08-01

    In recent decades particular interest in applications of nonequilibrium plasma for the problems of plasma-assisted ignition and plasma-assisted combustion has been observed. A great amount of experimental data has been accumulated during this period which provided the grounds for using low temperature plasma of nonequilibrium gas discharges for a number of applications at conditions of high speed flows and also at conditions similar to automotive engines. The paper is aimed at reviewing the data obtained and discusses their treatment. Basic possibilities of low temperature plasma to ignite gas mixtures are evaluated and historical references highlighting pioneering works in the area are presented. The first part of the review discusses plasmas applied to plasma-assisted ignition and combustion. The paper pays special attention to experimental and theoretical analysis of some plasma parameters, such as reduced electric field, electron density and energy branching for different gas discharges. Streamers, pulsed nanosecond discharges, dielectric barrier discharges, radio frequency discharges and atmospheric pressure glow discharges are considered. The second part depicts applications of discharges to reduce the ignition delay time of combustible mixtures, to ignite transonic and supersonic flows, to intensify ignition and to sustain combustion of lean mixtures. The results obtained by different authors are cited, and ways of numerical modelling are discussed. Finally, the paper draws some conclusions on the main achievements and prospects of future investigations in the field.

  1. Low temperature synthesis of Zn nanowires by physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Schroeder, Philipp; Kast, Michael; Brueckl, Hubert [Austrian Research Centers GmbH ARC, Nano- Systemtechnologies, Donau-City-Strasse 1, A-1220 Wien (Austria)

    2007-07-01

    We demonstrate catalytic growth of zinc nanowires by physical vapor deposition at modest temperatures of 125-175 C on various substrates. In contrast to conventional approaches using tube furnaces our home-built growth system allows to control the vapor sources and the substrate temperature separately. The silicon substrates were sputter coated with a thin gold layer as metal catalyst. The samples were heated to the growth temperature and subsequently exposed to the zinc vapor at high vacuum conditions. The work pressure was adjusted by the partial pressure of oxygen or argon flow gas. Scanning electron microscopy and atomic force microscopy characterizations revealed that the nanowires exhibit straight, uniform morphology and have diameters in the range of 50-350 nm and lengths up to 70 {mu}m. The Zn nanowires grow independently of the substrates crystal orientation via a catalytic vapor-solid growth mechanism. Since no nanowire formation was observed without gold coating, we expect that the onedimensional growth is initiated by a surface reactive Au seed. ZnO nanowires can be produced in the same preparation chamber by oxidation at 500 C in 1atm (80% Ar, 20% O{sub 2}) for 1 hour. ZnO is highly attractive for sensor applications.

  2. Corrosion processes of physical vapor deposition-coated metallic implants.

    Science.gov (United States)

    Antunes, Renato Altobelli; de Oliveira, Mara Cristina Lopes

    2009-01-01

    Protecting metallic implants from the harsh environment of physiological fluids is essential to guaranteeing successful long-term use in a patient's body. Chemical degradation may lead to the failure of an implant device in two different ways. First, metal ions may cause inflammatory reactions in the tissues surrounding the implant and, in extreme cases, these reactions may inflict acute pain on the patient and lead to loosening of the device. Therefore, increasing wear strength is beneficial to the performance of the metallic implant. Second, localized corrosion processes contribute to the nucleation of fatigue cracks, and corrosion fatigue is the main reason for the mechanical failure of metallic implants. Common biomedical alloys such as stainless steel, cobalt-chrome alloys, and titanium alloys are prone to at least one of these problems. Vapor-deposited hard coatings act directly to improve corrosion, wear, and fatigue resistances of metallic materials. The effectiveness of the corrosion protection is strongly related to the structure of the physical vapor deposition layer. The aim of this paper is to present a comprehensive review of the correlation between the structure of physical vapor deposition layers and the corrosion properties of metallic implants.

  3. Plasma assisted combustion of parafin mixture

    International Nuclear Information System (INIS)

    Nedybaliuk, O.A.; Chernyak, V.Ya.; Martysh, E.V.; Lisitchenko, T.E.; Vergun, O.Yu.; Orlovska, S.G.

    2013-01-01

    In this work the results of solid paraffin combustion with the aid of the plasma of transverse and rotational gliding arc studies are represented. The question of the additional activation of paraffin based solid fuels is examined. The mixture of n-paraffin and stearin in the solid state as the model of the solid paraffin based fuel is used. The plasma assisted combustion of this model is experimentally investigated. The voltage-current characteristics of discharge at the different regimes are measured. The population temperatures of excited rotational levels are determined. The flame temperature during the combustion of solid paraffin containing mixture is calculated

  4. Physically vapor deposited coatings on tools: performance and wear phenomena

    International Nuclear Information System (INIS)

    Koenig, W.; Fritsch, R.; Kammermeier, D.

    1991-01-01

    Coatings produced by physical vapor deposition (PVD) enhance the performance of tools for a broad variety of production processes. In addition to TiN, nowadays (Ti,Al)N and Ti(C,N) coated tools are available. This gives the opportunity to compare the performance of different coatings under identical machining conditions and to evaluate causes and phenomena of wear. TiN, (Ti,Al)N and Ti(C,N) coatings on high speed steel (HSS) show different performances in milling and turning of heat treated steel. The thermal and frictional properties of the coating materials affect the structure, the thickness and the flow of the chips, the contact area on the rake face and the tool life. Model tests show the influence of internal cooling and the thermal conductivity of coated HSS inserts. TiN and (Ti,Zr)N PVD coatings on cemented carbides were examined in interrupted turning and in milling of heat treated steel. Experimental results show a significant influence of typical time-temperature cycles of PVD and chemical vapor deposition (CVD) coating processes on the physical data and on the performance of the substrates. PVD coatings increase tool life, especially towards lower cutting speeds into ranges which cannot be applied with CVD coatings. The reason for this is the superior toughness of the PVD coated carbide. The combination of tough, micrograin carbide and PVD coating even enables broaching of case hardened sliding gears at a cutting speed of 66 m min -1 . (orig.)

  5. Scaling behavior of columnar structure during physical vapor deposition

    Science.gov (United States)

    Meese, W. J.; Lu, T.-M.

    2018-02-01

    The statistical effects of different conditions in physical vapor deposition, such as sputter deposition, have on thin film morphology has long been the subject of interest. One notable effect is that of column development due to differential chamber pressure in the well-known empirical model called the Thornton's Structure Zone Model. The model is qualitative in nature and theoretical understanding with quantitative predictions of the morphology is still lacking due, in part, to the absence of a quantitative description of the incident flux distribution on the growth front. In this work, we propose an incident Gaussian flux model developed from a series of binary hard-sphere collisions and simulate its effects using Monte Carlo methods and a solid-on-solid growth scheme. We also propose an approximate cosine-power distribution for faster Monte Carlo sampling. With this model, it is observed that higher chamber pressures widen the average deposition angle, and similarly increase the growth of column diameters (or lateral correlation length) and the column-to-column separation (film surface wavelength). We treat both the column diameter and the surface wavelength as power laws. It is seen that both the column diameter exponent and the wavelength exponent are very sensitive to changes in pressure for low pressures (0.13 Pa to 0.80 Pa); meanwhile, both exponents saturate for higher pressures (0.80 Pa to 6.7 Pa) around a value of 0.6. These predictions will serve as guides to future experiments for quantitative description of the film morphology under a wide range of vapor pressure.

  6. 2017 Report for New LANL Physical Vapor Deposition Capability

    Energy Technology Data Exchange (ETDEWEB)

    Roman, Audrey Rae [Los Alamos National Laboratory; Zhao, Xinxin [Los Alamos National Laboratory; Bond, Evelyn M. [Los Alamos National Laboratory; Gooden, Matthew Edgell [Los Alamos National Laboratory; Rundberg, Robert S. [Los Alamos National Laboratory; Bredeweg, Todd Allen [Los Alamos National Laboratory

    2017-10-03

    There is an urgent need at LANL to achieve uniform, thin film actinide targets that are essential for nuclear physics experiments. The target preparation work is currently performed externally by Professor Walter Loveland at Oregon State University, who has made various evaporated actinide targets such as Th and U for use on several nuclear physics measurements at LANSCE. We are developing a vapor deposition capability, with the goal of evaporating Th and U in the Actinide Research Facility (ARF) at TA-48. In the future we plan to expand this work to evaporating transuranic elements, such as Pu. The ARF is the optimal location for evaporating actinides because this lab is specifically dedicated to actinide research. There are numerous instruments in the ARF that can be used to provide detailed characterization of the evaporated thin films such as: Table top Scanning Electron Microscope, In-situ X-Ray Diffraction, and 3D Raman spectroscopy. These techniques have the ability to determine the uniformity, surface characterization, and composition of the deposits.

  7. Physical vapor deposition of cubic boron nitride thin films

    International Nuclear Information System (INIS)

    Kester, D.J.

    1991-01-01

    Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

  8. Impurities in chromium deposits produced by electroplating and physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dini, J.W.

    1994-05-01

    Impurity contents in electrodeposited (hexavalent and trivalent) chromium deposits and physically vapor deposited (thermal evaporation, electron beam evaporation and rf-sputtering) were compared. Oxygen is the key impurity obtained in electrodeposited films but it can be minimized in hexavalent plating solutions by operating at high temperature, e. g., 85 C. Electrodeposits produced in trivalent chromium plating solutions and physically vapor deposited films have much higher oxygen contents than electrodeposits produced in hexavalent chromium solutions operated at temperatures around 85 C. Depending on the target material used for physically vapor deposited films, these films can also have high amounts of other impurities.

  9. Physical and mathematical modeling of diesel fuel liquid and vapor movement in porous media

    International Nuclear Information System (INIS)

    Johnson, T.E.; Kreamer, D.K.

    1994-01-01

    Two-dimensional physical modeling of diesel fuel leaks was conducted in sand tanks to determine liquid and vapor migration characteristics. Mathematical modeling provided estimation of vapor concentrations at discrete times and distances from the vapor source and was compared to the physical experiment. The mathematical gaseous diffusion model was analogous to the Theis equation for ground-water flow, accounted for sorptive effects of the media, and was calibrated using measured concentrations from the sand tank. Mathematically different positions of the vapor source were tested to better relate observed liquid flow rates and media configuration to gaseous concentrations. The calculated diffusion parameters were then used to estimate theoretical, three-dimensional vapor transport from a hypothetical liquid leak of 2.0 1/hr for 30 days. The associated three-dimensional vapor plume, which would be reasonably detectable by commercially available vadose zone monitors, was estimated to have a diameter of 8 m with a vapor concentration of 50 ppm at the outside edge of the vapor plume. A careful application of the method and values can be used to give a first approximation to the number of vapor monitors required at a field site as well as the optimal locations for the monitors

  10. Plasma and Ion Assistance in Physical Vapor Deposition: A Historical Perspective

    International Nuclear Information System (INIS)

    Anders, Andre

    2007-01-01

    Deposition of films using plasma or plasma-assist can be traced back surprisingly far, namely to the 18th century for arcs and to the 19th century for sputtering. However, only since the 1960s the coatings community considered other processes than evaporation for large scale commercial use. Ion Plating was perhaps the first important process, introducing vapor ionization and substrate bias to generate a beam of ions arriving on the surface of the growing film. Rather independently, cathodic arc deposition was established as an energetic condensation process, first in the former Soviet Union in the 1970s, and in the 1980s in the Western Hemisphere. About a dozen various ion-based coating technologies evolved in the last decades, all characterized by specific plasma or ion generation processes. Gridded and gridless ion sources were taken from space propulsion and applied to thin film deposition. Modeling and simulation have helped to make plasma and ions effects to be reasonably well understood. Yet--due to the complex, often non-linear and non-equilibrium nature of plasma and surface interactions--there is still a place for the experience plasma 'sourcerer'

  11. Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers

    NARCIS (Netherlands)

    Starostin, S. A.; Keuning, W.; Schalken, J.; Creatore, M.; Kessels, W. M. M.; Bouwstra, J. B.; van de Sanden, M. C. M.; de Vries, H. W.

    2016-01-01

    The synergy between fast (1600 nm · min−1), roll-to-roll plasma-enhanced chemical vapor deposited (PE-CVD) SiO2 layers and plasma-assisted atomic layer deposited (PA-ALD) ultra-thin Al2O3 films has been investigated in terms of moisture permeation barrier properties. The effective and intrinsic

  12. Synergy between plasma-assisted ALD and roll-to-roll atmospheric pressure PE-CVD processing of moisture barrier films on polymers

    NARCIS (Netherlands)

    Starostin, S.A.; Keuning, W.; Schalken, J.R.G.; Creatore, M.; Kessels, W.M.M.; Bouwstra, J.B.; Sanden, van de M.C.M.; Vries, de H.W.

    2016-01-01

    The synergy between fast (1600 nm · min−1), roll-to-roll plasma-enhanced chemical vapor deposited (PE-CVD) SiO2 layers and plasma-assisted atomic layer deposited (PA-ALD) ultra-thin Al2O3 films has been investigated in terms of moisture permeation barrier properties. The effective and intrinsic

  13. DBD plasma assisted combustion for 1D flat flame

    NARCIS (Netherlands)

    Elkholy, A.H.E.

    2015-01-01

    The potential use of non-equilibrium plasma for ignition and combustion control has garnered increasing interest due to the possibility of plasma-assisted approaches for ignition and flame stabilization. During the past decade, significant progress has been made toward understanding the mechanisms

  14. Plasma-assisted cleaning of extreme UV optics

    NARCIS (Netherlands)

    Dolgov, Alexandr Alexeevich

    2018-01-01

    Plasma-assisted cleaning of extreme UV optics EUV-induced surface plasma chemistry of photo-active agents The next generation of photolithography, extreme ultraviolet (EUV) lithography, makes use of 13.5 nm radiation. The ionizing photon flux, and vacuum requirements create a challenging operating

  15. Plasma Assisted Combustion Mechanism for Small Hydrocarbons

    Science.gov (United States)

    2015-01-01

    fast ionization wave. Combust.  Theory Modeling, 2001. V.5 pp.97‐129.  N.A.Popov. Effect of a  Pulsed  High‐Current  Discharge  on Hydrogen–Air  Mixtures... Discharge Tube Mono- chro- mator PM Pressure Gauge Electric Gauge Physics of Nonequilibrium  Systems Laboratory Hexane Oxidation by  Pulsed  Nanosecond...Pathways: C2H4‐air  Where PAC Experimental Data is Available Avalanche  to Streamer Transition in Uniform  Electric Field (air, 1 bar, 300 K, 1 cm

  16. Cyan laser diode grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Turski, H.; Muziol, G.; Wolny, P.; Cywiński, G.; Grzanka, S.; Sawicka, M.; Perlin, P.; Skierbiszewski, C.

    2014-01-01

    We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (Φ N ) during quantum wells (QWs) growth. We found that high Φ N improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold current density are discussed

  17. Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

    2017-03-01

    Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

  18. Plasma-assisted catalytic ionization using porous nickel plate

    International Nuclear Information System (INIS)

    Oohara, W.; Maeda, T.; Higuchi, T.

    2011-01-01

    Hydrogen atomic pair ions, i.e., H + and H - ions, are produced by plasma-assisted catalytic ionization using a porous nickel plate. Positive ions in a hydrogen plasma generated by dc arc discharge are irradiated to the porous plate, and pair ions are produced from the back of the irradiation plane. It becomes clear that the production quantity of pair ions mainly depends on the irradiation current of positive ions and the irradiation energy affects the production efficiency of H - ions.

  19. Gaseous material capacity of open plasma jet in plasma spray-physical vapor deposition process

    Science.gov (United States)

    Liu, Mei-Jun; Zhang, Meng; Zhang, Qiang; Yang, Guan-Jun; Li, Cheng-Xin; Li, Chang-Jiu

    2018-01-01

    Plasma spray-physical vapor deposition (PS-PVD) process, emerging as a highly efficient hybrid approach, is based on two powerful technologies of both plasma spray and physical vapor deposition. The maximum production rate is affected by the material feed rate apparently, but it is determined by the material vapor capacity of transporting plasma actually and essentially. In order to realize high production rate, the gaseous material capacity of plasma jet must be fundamentally understood. In this study, the thermal characteristics of plasma were measured by optical emission spectrometry. The results show that the open plasma jet is in the local thermal equilibrium due to a typical electron number density from 2.1 × 1015 to 3.1 × 1015 cm-3. In this condition, the temperature of gaseous zirconia can be equal to the plasma temperature. A model was developed to obtain the vapor pressure of gaseous ZrO2 molecules as a two dimensional map of jet axis and radial position corresponding to different average plasma temperatures. The overall gaseous material capacity of open plasma jet, take zirconia for example, was further established. This approach on evaluating material capacity in plasma jet would shed light on the process optimization towards both depositing columnar coating and a high production rate of PS-PVD.

  20. Plasma Spray-Physical Vapor Deposition (PS-PVD) of Ceramics for Protective Coatings

    Science.gov (United States)

    Harder, Bryan J.; Zhu, Dongming

    2011-01-01

    In order to generate advanced multilayer thermal and environmental protection systems, a new deposition process is needed to bridge the gap between conventional plasma spray, which produces relatively thick coatings on the order of 125-250 microns, and conventional vapor phase processes such as electron beam physical vapor deposition (EB-PVD) which are limited by relatively slow deposition rates, high investment costs, and coating material vapor pressure requirements. The use of Plasma Spray - Physical Vapor Deposition (PS-PVD) processing fills this gap and allows thin (deposited and multilayer coatings of less than 100 microns to be generated with the flexibility to tailor microstructures by changing processing conditions. Coatings of yttria-stabilized zirconia (YSZ) were applied to NiCrAlY bond coated superalloy substrates using the PS-PVD coater at NASA Glenn Research Center. A design-of-experiments was used to examine the effects of process variables (Ar/He plasma gas ratio, the total plasma gas flow, and the torch current) on chamber pressure and torch power. Coating thickness, phase and microstructure were evaluated for each set of deposition conditions. Low chamber pressures and high power were shown to increase coating thickness and create columnar-like structures. Likewise, high chamber pressures and low power had lower growth rates, but resulted in flatter, more homogeneous layers

  1. Processing-structure-property relationships in electron beam physical vapor deposited yttria stabilized zirconia coatings

    International Nuclear Information System (INIS)

    Rao, D. Srinivasa; Valleti, Krishna; Joshi, S. V.; Janardhan, G. Ranga

    2011-01-01

    The physical and mechanical properties of yttria stabilized zirconia (YSZ) coatings deposited by the electron beam physical vapor deposition technique have been investigated by varying the key process variables such as vapor incidence angle and sample rotation speed. The tetragonal zirconia coatings formed under varying process conditions employed were found to have widely different surface and cross-sectional morphologies. The porosity, phase composition, planar orientation, hardness, adhesion, and surface residual stresses in the coated specimens were comprehensively evaluated to develop a correlation with the process variables. Under transverse scratch test conditions, the YSZ coatings exhibited two different crack formation modes, depending on the magnitude of residual stress. The influence of processing conditions on the coating deposition rate, column orientation angle, and adhesion strength has been established. Key relationships between porosity, hardness, and adhesion are also presented.

  2. Kinetic Study of Nonequilibrium Plasma-Assisted Methane Steam Reforming

    Directory of Open Access Journals (Sweden)

    Hongtao Zheng

    2014-01-01

    Full Text Available To develop a detailed reaction mechanism for plasma-assisted methane steam reforming, a comprehensive numerical and experimental study of effect laws on methane conversion and products yield is performed at different steam to methane molar ratio (S/C, residence time s, and reaction temperatures. A CHEMKIN-PRO software with sensitivity analysis module and path flux analysis module was used for simulations. A set of comparisons show that the developed reaction mechanism can accurately predict methane conversion and the trend of products yield in different operating conditions. Using the developed reaction mechanism in plasma-assisted kinetic model, the reaction path flux analysis was carried out. The result shows that CH3 recombination is the limiting reaction for CO production and O is the critical species for CO production. Adding 40 wt.% Ni/SiO2 in discharge region has significantly promoted the yield of H2, CO, or CO2 in dielectric packed bed (DPB reactor. Plasma catalytic hybrid reforming experiment verifies the reaction path flux analysis tentatively.

  3. MgB2 thin films by hybrid physical-chemical vapor deposition

    International Nuclear Information System (INIS)

    Xi, X.X.; Pogrebnyakov, A.V.; Xu, S.Y.; Chen, K.; Cui, Y.; Maertz, E.C.; Zhuang, C.G.; Li, Qi; Lamborn, D.R.; Redwing, J.M.; Liu, Z.K.; Soukiassian, A.; Schlom, D.G.; Weng, X.J.; Dickey, E.C.; Chen, Y.B.; Tian, W.; Pan, X.Q.; Cybart, S.A.; Dynes, R.C.

    2007-01-01

    Hybrid physical-chemical vapor deposition (HPCVD) has been the most effective technique for depositing MgB 2 thin films. It generates high magnesium vapor pressures and provides a clean environment for the growth of high purity MgB 2 films. The epitaxial pure MgB 2 films grown by HPCVD show higher-than-bulk T c due to tensile strain in the films. The HPCVD films are the cleanest MgB 2 materials reported, allowing basic research, such as on magnetoresistance, that reveals the two-band nature of MgB 2 . The carbon-alloyed HPCVD films demonstrate record-high H c2 values promising for high magnetic field applications. The HPCVD films and multilayers have enabled the fabrication of high quality MgB 2 Josephson junctions

  4. Commercialization of Plasma-Assisted Technologies: The Indian Experience

    Science.gov (United States)

    John, P. I.

    The paper describes an initiative by the Institute for Plasma Research (IPR), India in establishing links with the Indian industry for developing and commercialising advanced plasma-based industrial technologies. This has culminated in the creation of a self-financing technology development, incubation, demonstration and delivery facility. A business plan for converting the knowledge base to commercially viable technologies conceived technology as a product and the industry as the market and addressed issues like resistance to new technologies, the key role of entrepreneur, thrust areas and the necessity of technology incubation and delivery. Success of this strategy is discussed in a few case studies. We conclude by identifying the cost, environmental, strategic and techno-economic aspects, which would be the prime drivers for plasma-assisted manufacturing technology in India.

  5. Plasma assisted surface coating/modification processes: An emerging technology

    Science.gov (United States)

    Spalvins, T.

    1986-01-01

    A broad understanding of the numerous ion or plasma assisted surface coating/modification processes is sought. An awareness of the principles of these processes is needed before discussing in detail the ion nitriding technology. On the basis of surface modifications arising from ion or plasma energizing and interactions, it can be broadly classified as deposition of distinct overlay coatings (sputtering-dc, radio frequency, magnetron, reactive; ion plating-diode, triode) and surface property modification without forming a discrete coating (ion implantation, ion beam mixing, laser beam irradiation, ion nitriding, ion carburizing, plasma oxidation). These techniques offer a great flexibility and are capable in tailoring desirable chemical and structural surface properties independent of the bulk properties.

  6. Plasma assisted surface coating/modification processes - An emerging technology

    Science.gov (United States)

    Spalvins, T.

    1987-01-01

    A broad understanding of the numerous ion or plasma assisted surface coating/modification processes is sought. An awareness of the principles of these processes is needed before discussing in detail the ion nitriding technology. On the basis of surface modifications arising from ion or plasma energizing and interactions, it can be broadly classified as deposition of distinct overlay coatings (sputtering-dc, radio frequency, magnetron, reactive; ion plating-diode, triode) and surface property modification without forming a discrete coating (ion implantation, ion beam mixing, laser beam irradiation, ion nitriding, ion carburizing, plasma oxidation. These techniques offer a great flexibility and are capable in tailoring desirable chemical and structural surface properties independent of the bulk properties.

  7. Novel Prospects for Plasma Spray-Physical Vapor Deposition of Columnar Thermal Barrier Coatings

    Science.gov (United States)

    Anwaar, Aleem; Wei, Lianglinag; Guo, Qian; Zhang, Baopeng; Guo, Hongbo

    2017-12-01

    Plasma spray-physical vapor deposition (PS-PVD) is an emerging coating technique that can produce columnar thermal barrier coatings from vapor phase. Feedstock treatment at the start of its trajectory in the plasma torch nozzle is important for such vapor-phase deposition. This study describes the effects of the plasma composition (Ar/He) on the plasma characteristics, plasma-particle interaction, and particle dynamics at different points spatially distributed inside the plasma torch nozzle. The results of calculations show that increasing the fraction of argon in the plasma gas mixture enhances the momentum and heat flow between the plasma and injected feedstock. For the plasma gas combination of 45Ar/45He, the total enthalpy transferred to a representative powder particle inside the plasma torch nozzle is highest ( 9828 kJ/kg). Moreover, due to the properties of the plasma, the contribution of the cylindrical throat, i.e., from the feed injection point (FIP) to the start of divergence (SOD), to the total transferred energy is 69%. The carrier gas flow for different plasma gas mixtures was also investigated by optical emission spectroscopy (OES) measurements of zirconium emissions. Yttria-stabilized zirconia (YSZ) coating microstructures were produced when using selected plasma gas compositions and corresponding carrier gas flows; structural morphologies were found to be in good agreement with OES and theoretical predictions. Quasicolumnar microstructure was obtained with porosity of 15% when applying the plasma composition of 45Ar/45He.

  8. Single-crystalline AlN growth on sapphire using physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cardenas-Valencia, Andres M., E-mail: andres.cardenas@sri.co [SRI International (United States); Onishi, Shinzo; Rossie, Benjamin [SRI International (United States)

    2011-02-07

    A novel technique for growing single crystalline aluminum nitride (AlN) films is presented. The novelty of the technique, specifically, comes from the use of an innovative physical vapor deposition magnetron sputtering tool, which embeds magnets into the target material. A relatively high deposition rates is achieved ({approx}0.2 {mu}m/min), at temperatures between 860 and 940 {sup o}C. The AlN, grown onto sapphire, is single-crystalline as evidenced by observation using transmission electron microscopy. Tool configuration and growth conditions are discussed, as well as a first set of other analytical results, namely, x-ray diffraction and ultraviolet-visible transmission spectrophotometry.

  9. MgB2 ultrathin films fabricated by hybrid physical chemical vapor deposition and ion milling

    Directory of Open Access Journals (Sweden)

    Narendra Acharya

    2016-08-01

    Full Text Available In this letter, we report on the structural and transport measurements of ultrathin MgB2 films grown by hybrid physical-chemical vapor deposition followed by low incident angle Ar ion milling. The ultrathin films as thin as 1.8 nm, or 6 unit cells, exhibit excellent superconducting properties such as high critical temperature (Tc and high critical current density (Jc. The results show the great potential of these ultrathin films for superconducting devices and present a possibility to explore superconductivity in MgB2 at the 2D limit.

  10. Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

    2015-08-31

    We report the growth and characterization of III-nitride ternary thin films (Al{sub x}Ga{sub 1−x}N, In{sub x}Al{sub 1−x}N and In{sub x}Ga{sub 1−x}N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxy • Growth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures.

  11. Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

    International Nuclear Information System (INIS)

    Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

    2015-01-01

    We report the growth and characterization of III-nitride ternary thin films (Al x Ga 1−x N, In x Al 1−x N and In x Ga 1−x N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxy • Growth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures

  12. Modeling film uniformity and symmetry in ionized metal physical vapor deposition with cylindrical targets

    International Nuclear Information System (INIS)

    Lu Junqing; Yang Lin; Yoon, Jae Hong; Cho, Tong Yul; Tao Guoqing

    2008-01-01

    Severe asymmetry of the metal deposits on the trench sidewalls occurs near the wafer edge during low pressure ionized metal physical vapor deposition of Cu seed layer for microprocessor interconnects. To investigate this process and mitigate the asymmetry, an analytical view factor model based on the analogy between metal sputtering and diffuse thermal radiation was constructed to investigate deposition uniformity and symmetry for cylindrical target sputtering in low pressure (below 0.1 Pa) ionized Cu physical vapor deposition. The model predictions indicate that as the distance from the cylindrical target to wafer increases, the metal film thickness becomes more uniform across the wafer and the asymmetry of the metal deposits at the wafer edge increases significantly. These trends are similar to those for planar targets. To minimize the asymmetry, the height of the cylindrical target should be kept at a minimum. For cylindrical targets, the outward-facing sidewall of the trench could receive more direct Cu fluxes than the inward-facing one when the target to wafer distance is short. The predictions also indicate that increasing the diameter of the cylindrical target could significantly reduce the asymmetry in metal deposits at the wafer edge and make the film thickness more uniform across the wafer

  13. PROPERTIES AND OPTICAL APPLICATION OF POLYCRYSTALLINE ZINC SELENIDE OBTAINED BY PHYSICAL VAPOR DEPOSITION

    Directory of Open Access Journals (Sweden)

    A. A. Dunaev

    2015-05-01

    Full Text Available Findings on production technology, mechanical and optical properties of polycrystalline zinc selenide are presented. The combination of its physicochemical properties provides wide application of ZnSe in IR optics. Production technology is based on the method of physical vapor deposition on a heated substrate (Physical Vapor Deposition - PVD. The structural features and heterogeneity of elemental composition for the growth surfaces of ZnSe polycrystalline blanks were investigated using CAMEBAX X-ray micro-analyzer. Characteristic pyramid-shaped crystallites were recorded for all growth surfaces. The measurements of the ratio for major elements concentrations show their compliance with the stoichiometry of the ZnSe compounds. Birefringence, optical homogeneity, thermal conductivity, mechanical and optical properties were measured. It is established that regardless of polycrystalline condensate columnar and texturing, the optical material is photomechanically isotropic and homogeneous. The actual performance of parts made of polycrystalline optical zinc selenide in the thermal spectral ranges from 3 to 5 μm and from 8 to 14 μm and in the CO2 laser processing plants with a power density of 500 W/cm2 is shown. The developed technology gives the possibility to produce polycrystalline optical material on an industrial scale.

  14. Fabrication and characterization of a cell electrostimulator device combining physical vapor deposition and laser ablation

    Science.gov (United States)

    Aragón, Angel L.; Pérez, Eliseo; Pazos, Antonio; Bao-Varela, Carmen; Nieto, Daniel

    2017-08-01

    In this work we present the process of fabrication and optimization of a prototype of a cell electrostimulator device for medical application combining physical vapor deposition and laser ablation. The fabrication of the first prototype begins with a deposition of a thin layer of 200 nm of aluminium on a borosilicate glass substrate using physical vapor deposition (PVD). In the second stage the geometry design of the electrostimulator is made in a CAD-like software available in a Nd:YVO4 Rofin Power line 20E, operating at the fundamental wavelength of 1064 nm and 20 ns pulse width. Choosing the proper laser parameters the negative of the electrostimulator desing is ablated. After that the glass is assembled between two polycarbonate sheets and a thick sheet of polydimethylsiloxane (PDMS). The PDMS sheet has a round hole in where cells are placed. There is also included a thin soda-lime silicate glass (100 μm) between the electrostimulator and the PMDS to prevent the cells for being in contact with the electric circuit. In order to control the electrical signal applied to the electrostimulator is used a digital I/O device from National Instruments (USB-6501) which provides 5 V at the output monitored by a software programmed in LabVIEW. Finally, the optical and electrical characterization of the cell electrostimulator device is presented.

  15. Energy Considerations for Plasma-Assisted N-Fixation Reactions

    Directory of Open Access Journals (Sweden)

    Aikaterini Anastasopoulou

    2014-09-01

    Full Text Available In a time of increasing concerns about the immense energy consumption and poor environmental performance of contemporary processes in the chemical industry, there is great need to develop novel sustainable technologies that enhance energy efficiency. There is abundant chemical literature on process innovations (laboratory-scale around the plasma reactor itself, which, naturally, is the essential part to be intensified to achieve a satisfactory process. In essence, a plasma process needs attention beyond reaction engineering towards the process integration side and also with strong electrical engineering focus. In this mini-review, we have detailed our future focus on the process and energy intensification of plasma-based N-fixation. Three focal points are mainly stressed throughout the review: (I the integration of renewable energy; (II the power supply system of plasma reactors and (III process design of industrial plasma-assisted nitrogen fixation. These different enabling strategies will be set in a holistic and synergetic picture so as to improve process performance.

  16. Suppressed beta relaxations and reduced heat capacity in ultrastable organic glasses prepared by physical vapor deposition

    Science.gov (United States)

    Ediger, Mark

    Glasses play an important role in technology as a result of their macroscopic homogeneity (e.g., the clarity of window glass) and our ability to tune properties through composition changes. A problem with liquid-cooled glasses is that they exhibit marginal kinetic stability and slowly evolve towards lower energy glasses and crystalline states. In contrast, we have shown that physical vapor deposition can prepare glasses with very high kinetic stability. These materials have properties expected for ``million-year-old'' glasses, including high density, low enthalpy, and high mechanical moduli. We have used nanocalorimetry to show that these high stability glasses have lower heat capacities than liquid-cooled glasses for a number of molecular systems. Dielectric relaxation has been used to show that the beta relaxation can be suppressed by nearly a factor of four in vapor-deposited toluene glasses, indicating a very tight packing environment. Consistent with this view, computer simulations of high stability glasses indicate reduced Debye-Waller factors. These high stability materials raise interesting questions about the limiting properties of amorphous packing arrangements.

  17. High Temperature Multilayer Environmental Barrier Coatings Deposited Via Plasma Spray-Physical Vapor Deposition

    Science.gov (United States)

    Harder, Bryan James; Zhu, Dongming; Schmitt, Michael P.; Wolfe, Douglas E.

    2014-01-01

    Si-based ceramic matrix composites (CMCs) require environmental barrier coatings (EBCs) in combustion environments to avoid rapid material loss. Candidate EBC materials have use temperatures only marginally above current technology, but the addition of a columnar oxide topcoat can substantially increase the durability. Plasma Spray-Physical Vapor Deposition (PS-PVD) allows application of these multilayer EBCs in a single process. The PS-PVD technique is a unique method that combines conventional thermal spray and vapor phase methods, allowing for tailoring of thin, dense layers or columnar microstructures by varying deposition conditions. Multilayer coatings were deposited on CMC specimens and assessed for durability under high heat flux and load. Coated samples with surface temperatures ranging from 2400-2700F and 10 ksi loads using the high heat flux laser rigs at NASA Glenn. Coating morphology was characterized in the as-sprayed condition and after thermomechanical loading using electron microscopy and the phase structure was tracked using X-ray diffraction.

  18. Development of amorphous silicon based EUV hardmasks through physical vapor deposition

    Science.gov (United States)

    De Silva, Anuja; Mignot, Yann; Meli, Luciana; DeVries, Scott; Xu, Yongan; Seshadri, Indira; Felix, Nelson M.; Zeng, Wilson; Cao, Yong; Phan, Khoi; Dai, Huixiong; Ngai, Christopher S.; Stolfi, Michael; Diehl, Daniel L.

    2017-10-01

    Extending extreme ultraviolet (EUV) single exposure patterning to its limits requires more than photoresist development. The hardmask film is a key contributor in the patterning stack that offers opportunities to enhance lithographic process window, increase pattern transfer efficiency, and decrease defectivity when utilizing very thin film stacks. This paper introduces the development of amorphous silicon (a-Si) deposited through physical vapor deposited (PVD) as an alternative to a silicon ARC (SiARC) or silicon-oxide-type EUV hardmasks in a typical trilayer patterning scheme. PVD offers benefits such as lower deposition temperature, and higher purity, compared to conventional chemical vapor deposition (CVD) techniques. In this work, sub-36nm pitch line-space features were resolved with a positive-tone organic chemically-amplified resist directly patterned on PVD a-Si, without an adhesion promotion layer and without pattern collapse. Pattern transfer into the underlying hardmask stack was demonstrated, allowing an evaluation of patterning metrics related to resolution, pattern transfer fidelity, and film defectivity for PVD a-Si compared to a conventional tri-layer patterning scheme. Etch selectivity and the scalability of PVD a-Si to reduce the aspect ratio of the patterning stack will also be discussed.

  19. Physically Unclonable Cryptographic Primitives by Chemical Vapor Deposition of Layered MoS2.

    Science.gov (United States)

    Alharbi, Abdullah; Armstrong, Darren; Alharbi, Somayah; Shahrjerdi, Davood

    2017-12-26

    Physically unclonable cryptographic primitives are promising for securing the rapidly growing number of electronic devices. Here, we introduce physically unclonable primitives from layered molybdenum disulfide (MoS 2 ) by leveraging the natural randomness of their island growth during chemical vapor deposition (CVD). We synthesize a MoS 2 monolayer film covered with speckles of multilayer islands, where the growth process is engineered for an optimal speckle density. Using the Clark-Evans test, we confirm that the distribution of islands on the film exhibits complete spatial randomness, hence indicating the growth of multilayer speckles is a spatial Poisson process. Such a property is highly desirable for constructing unpredictable cryptographic primitives. The security primitive is an array of 2048 pixels fabricated from this film. The complex structure of the pixels makes the physical duplication of the array impossible (i.e., physically unclonable). A unique optical response is generated by applying an optical stimulus to the structure. The basis for this unique response is the dependence of the photoemission on the number of MoS 2 layers, which by design is random throughout the film. Using a threshold value for the photoemission, we convert the optical response into binary cryptographic keys. We show that the proper selection of this threshold is crucial for maximizing combination randomness and that the optimal value of the threshold is linked directly to the growth process. This study reveals an opportunity for generating robust and versatile security primitives from layered transition metal dichalcogenides.

  20. Examining the Potential of Plasma-Assisted Pretreated Wheat Straw for Enzyme Production by Trichoderma reesei

    DEFF Research Database (Denmark)

    Rodríguez Gómez, Divanery; Lehmann, Linda Olkjær; Schultz-Jensen, Nadja

    2012-01-01

    Plasma-assisted pretreated wheat straw was investigated for cellulase and xylanase production by Trichoderma reesei fermentation. Fermentations were conducted with media containing washed and unwashed plasma-assisted pretreated wheat straw as carbon source which was sterilized by autoclavation....... To account for any effects of autoclavation, a comparison was made with unsterilized media containing antibiotics. It was found that unsterilized washed plasma-assisted pretreated wheat straw (which contained antibiotics) was best suited for the production of xylanases (110 IU ml(-1)) and cellulases (0...... other nonrefined feedstocks suggests that plasma pretreated wheat straw is a promising and suitable substrate for cellulase and hemicellulase production....

  1. Superconducting magnesium diboride coatings for radio frequency cavities fabricated by hybrid physical-chemical vapor deposition

    Science.gov (United States)

    Wolak, M. A.; Tan, T.; Krick, A.; Johnson, E.; Hambe, M.; Chen, Ke; Xi, X. X.

    2014-01-01

    We have investigated the coating of an inner surface of superconducting radio frequency cavities with a magnesium diboride thin film by hybrid physical-chemical vapor deposition (HPCVD). To simulate a 6 GHz rf cavity, a straight stainless steel tube of 1.5-inch inner diameter and a dummy stainless steel cavity were employed, on which small sapphire and metal substrates were mounted at different locations. The MgB2 films on these substrates showed uniformly good superconducting properties including Tc of 37-40 K, residual resistivity ratio of up to 14, and root-mean-square roughness Rq of 20-30 nm. This work demonstrates the feasibility of coating the interior of cylindrical and curved objects with MgB2 by the HPCVD technique, an important step towards superconducting rf cavities with MgB2 coating.

  2. Superconducting magnesium diboride coatings for radio frequency cavities fabricated by hybrid physical-chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    M. A. Wolak

    2014-01-01

    Full Text Available We have investigated the coating of an inner surface of superconducting radio frequency cavities with a magnesium diboride thin film by hybrid physical-chemical vapor deposition (HPCVD. To simulate a 6 GHz rf cavity, a straight stainless steel tube of 1.5-inch inner diameter and a dummy stainless steel cavity were employed, on which small sapphire and metal substrates were mounted at different locations. The MgB_{2} films on these substrates showed uniformly good superconducting properties including T_{c} of 37–40 K, residual resistivity ratio of up to 14, and root-mean-square roughness R_{q} of 20–30 nm. This work demonstrates the feasibility of coating the interior of cylindrical and curved objects with MgB_{2} by the HPCVD technique, an important step towards superconducting rf cavities with MgB_{2} coating.

  3. Supramolecular structure of a perylene derivative in thin films deposited by physical vapor deposition

    International Nuclear Information System (INIS)

    Fernandes, Jose D.; Aoki, Pedro H.B.; Constantino, Carlos J.J.; Junior, Wagner D.M.; Teixeira, Silvio R.

    2014-01-01

    Full text: Thin films of a perylene derivative, the bis butylimido perylene (BuPTCD), were produced using thermal evaporation (PVD, physical vapor deposition). The main objective is to investigate the supramolecular structure of the BuPTCD in these PVD films, which implies to control the thickness and to determine the molecular organization, morphology at micro and nanometer scales and crystallinity. This supramolecular structure is a key factor in the optical and electrical properties of the film. The ultraviolet-visible absorption revealed an uniform growth of the PVD films. The optical and atomic force microscopy images showed a homogeneous surface of the film at micro and nanometer scales. A preferential orientation of the molecules in the PVD films was determined via infrared absorption. The X-ray diffraction showed that both powder and PVD film are in the crystalline form. (author)

  4. Metallographic techniques for evaluation of Thermal Barrier Coatings produced by Electron Beam Physical Vapor Deposition

    International Nuclear Information System (INIS)

    Kelly, Matthew; Singh, Jogender; Todd, Judith; Copley, Steven; Wolfe, Douglas

    2008-01-01

    Thermal Barrier Coatings (TBC) produced by Electron Beam Physical Vapor Deposition (EB-PVD) are primarily applied to critical hot section turbine components. EB-PVD TBC for turbine applications exhibit a complicated structure of porous ceramic columns separated by voids that offers mechanical compliance. Currently there are no standard evaluation methods for evaluating EB-PVD TBC structure quantitatively. This paper proposes a metallographic method for preparing samples and evaluating techniques to quantitatively measure structure. TBC samples were produced and evaluated with the proposed metallographic technique and digital image analysis for columnar grain size and relative intercolumnar porosity. Incorporation of the proposed evaluation technique will increase knowledge of the relation between processing parameters and material properties by incorporating a structural link. Application of this evaluation method will directly benefit areas of quality control, microstructural model development, and reduced development time for process scaling

  5. Investigation on the corrosion behavior of physical vapor deposition coated high speed steel

    Directory of Open Access Journals (Sweden)

    R Ravi Raja Malarvannan

    2015-08-01

    Full Text Available This work emphasizes on the influence of the TiN and AlCrN coatings fabricated on high speed steel form tool using physical vapor deposition technique. The surface microstructure of the coatings was studied using scanning electron microscope. Hardness and corrosion studies were also performed using Vickers hardness test and salt spray testing, respectively. The salt spray test results suggested that the bilayer coated (TiN- bottom layer and AlCrN- top layer substrate has undergone less amount of corrosion, and this is attributed to the dense microstructure. In addition to the above, the influence of the above coatings on the machining performance of the high speed steel was also evaluated and compared with that of the uncoated material and the results suggested that the bilayered coating has undergone very low weight loss when compared with that of the uncoated substrate depicting enhanced wear resistance.

  6. CMAS Interactions with Advanced Environmental Barrier Coatings Deposited via Plasma Spray- Physical Vapor Deposition

    Science.gov (United States)

    Harder, B. J.; Wiesner, V. L.; Zhu, D.; Johnson, N. S.

    2017-01-01

    Materials for advanced turbine engines are expected to have temperature capabilities in the range of 1370-1500C. At these temperatures the ingestion of sand and dust particulate can result in the formation of corrosive glass deposits referred to as CMAS. The presence of this glass can both thermomechanically and thermochemically significantly degrade protective coatings on metallic and ceramic components. Plasma Spray- Physical Vapor Deposition (PS-PVD) was used to deposit advanced environmental barrier coating (EBC) systems for investigation on their interaction with CMAS compositions. Coatings were exposed to CMAS and furnace tested in air from 1 to 50 hours at temperatures ranging from 1200-1500C. Coating composition and crystal structure were tracked with X-ray diffraction and microstructure with electron microscopy.

  7. Highly ionized physical vapor deposition plasma source working at very low pressure

    Science.gov (United States)

    Stranak, V.; Herrendorf, A.-P.; Drache, S.; Cada, M.; Hubicka, Z.; Tichy, M.; Hippler, R.

    2012-04-01

    Highly ionized discharge for physical vapor deposition at very low pressure is presented in the paper. The discharge is generated by electron cyclotron wave resonance (ECWR) which assists with ignition of high power impulse magnetron sputtering (HiPIMS) discharge. The magnetron gun (with Ti target) was built into the single-turn coil RF electrode of the ECWR facility. ECWR assistance provides pre-ionization effect which allows significant reduction of pressure during HiPIMS operation down to p = 0.05 Pa; this is nearly more than an order of magnitude lower than at typical pressure ranges of HiPIMS discharges. We can confirm that nearly all sputtered particles are ionized (only Ti+ and Ti++ peaks are observed in the mass scan spectra). This corresponds well with high plasma density ne ˜ 1018 m-3, measured during the HiPIMS pulse.

  8. Highly ionized physical vapor deposition plasma source working at very low pressure

    International Nuclear Information System (INIS)

    Stranak, V.; Herrendorf, A.-P.; Drache, S.; Hippler, R.; Cada, M.; Hubicka, Z.; Tichy, M.

    2012-01-01

    Highly ionized discharge for physical vapor deposition at very low pressure is presented in the paper. The discharge is generated by electron cyclotron wave resonance (ECWR) which assists with ignition of high power impulse magnetron sputtering (HiPIMS) discharge. The magnetron gun (with Ti target) was built into the single-turn coil RF electrode of the ECWR facility. ECWR assistance provides pre-ionization effect which allows significant reduction of pressure during HiPIMS operation down to p = 0.05 Pa; this is nearly more than an order of magnitude lower than at typical pressure ranges of HiPIMS discharges. We can confirm that nearly all sputtered particles are ionized (only Ti + and Ti ++ peaks are observed in the mass scan spectra). This corresponds well with high plasma density n e ∼ 10 18 m -3 , measured during the HiPIMS pulse.

  9. Physical vapor transport growth and properties of SiC monocrystals of 4H polytype

    Energy Technology Data Exchange (ETDEWEB)

    Augustine, G.; Hobgood, H.M.; Balakrishna, V.; Dunne, G.; Hopkins, R.H. [Northrop Grumman Corp., Pittsburgh, PA (United States). Electron. Sensors and Syst. Div.

    1997-07-01

    The physical vapor transport technique can be employed to fabricate large diameter silicon carbide crystals (up to 50 mm diameter) exhibiting uniform 4H-polytype over the full crystal volume. Crystal growth rate is controlled to first order by temperature conditions and ambient pressure. 4H-polytype uniformity is controlled by polarity of the seed crystal and the growth temperature. 4H-SiC crystals exhibit crystalline defects mainly in the form of dislocations with densities in the 10{sup 4} cm{sup -2} range and micropipe defects, the latter having densities as low as 10 cm{sup -2} in best crystals. Electrical conductivity in 4H-SiC bulk crystals ranges from <10{sup -2} {Omega} cm, n-type, to insulating (>10{sup 15} {Omega} cm) at room temperature. (orig.) 33 refs.

  10. Rapid growth of zinc oxide nanobars in presence of electric field by physical vapor deposition

    Science.gov (United States)

    Jouya, Mehraban; Taromian, Fahime; Siami, Simin

    2017-12-01

    In this contribution, electric field has some effects to increase growth for specific time duration on zinc oxide (ZnO) nanobars. First, the zinc (Zn) thin film has been prepared by 235,000 V/m electric field assisted physical vapor deposition (PVD) at vacuum of 1.33 × 10-5 mbar. Second, strong electric field of 134,000 V/m has been used in ambient for growing ZnO nanobars in term of the time include 2.5 and 10 h. The performances of the ZnO nanostructure in absence and presence of electric field have been determined by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results of XRD analysis showed that ZnO has a hexagonal bars structure and a strongly preferred (101) orientation which is strongest than without applying electric field. SEM analysis revealed that physical vapored ZnO thin film in presence of electric field are densely packed with uniform morphological, thinner and denser in distribution. Electric field effect for ZnO growth in 2.5 h is better than it in the 2.5 h without electric field but by passing the time the media influence has good power almost as same as electric field. Through this electric field in PVD, the compact and uniform Zn film has been achieved which is less diameter than ordinary PVD method. Finally, we carry out a series of experiments to grow different-orientation ZnO nanobars with less than 100 nm in diameter, which are the time saving process in base of PVD ever reported. Therefore, the significant conclusion in usage electric field is reducing time of growth.

  11. Physics of zinc vaporization and plasma absorption during CO2 laser welding

    International Nuclear Information System (INIS)

    Dasgupta, A. K.; Mazumder, J.; Li, P.

    2007-01-01

    A number of mathematical models have been developed earlier for single-material laser welding processes considering one-, two-, and three-dimensional heat and mass transfers. However, modeling of laser welding of materials with multiple compositions has been a difficult problem. This paper addresses a specific case of this problem where CO 2 laser welding of zinc-coated steel, commonly used in automobile body manufacturing, is mathematically modeled. The physics of a low boiling point material, zinc, is combined with a single-material (steel) welding model, considering multiple physical phenomena such as keyhole formation, capillary and thermocapillary forces, recoil and vapor pressures, etc. The physics of laser beam-plasma interaction is modeled to understand the effect on the quality of laser processing. Also, an adaptive meshing scheme is incorporated in the model for improving the overall computational efficiency. The model, whose results are found to be in close agreement with the experimental observations, can be easily extended for studying zinc-coated steel welding using other high power, continuous wave lasers such as Nd:YAG and Yb:YAG

  12. Measurement of heavy metals by means of a plasma-assisted method

    International Nuclear Information System (INIS)

    Hernberg, R.; Haeyrinen, V.; Oikari, R.

    1995-01-01

    The plasma-assisted measuring device for on-line measurement of alkali metal concentrations in pressurised processes, which has been developed in the Laboratory, will be further developed to provide for simultaneous measurement of heavy metal concentrations. (author)

  13. Ionized physical vapor deposition (IPVD): A review of technology and applications

    International Nuclear Information System (INIS)

    Helmersson, Ulf; Lattemann, Martina; Bohlmark, Johan; Ehiasarian, Arutiun P.; Gudmundsson, Jon Tomas

    2006-01-01

    In plasma-based deposition processing, the importance of low-energy ion bombardment during thin film growth can hardly be exaggerated. Ion bombardment is an important physical tool available to materials scientists in the design of new materials and new structures. Glow discharges and in particular, the magnetron sputtering discharge have the advantage that the ions of the discharge are abundantly available to the deposition process. However, the ion chemistry is usually dominated by the ions of the inert sputtering gas while ions of the sputtered material are rare. Over the last few years, various ionized sputtering techniques have appeared that can achieve a high degree of ionization of the sputtered atoms, often up to 50% but in some cases as much as approximately 90%. This opens a complete new perspective in the engineering and design of new thin film materials. The development and application of magnetron sputtering systems for ionized physical vapor deposition (IPVD) is reviewed. The application of a secondary discharge, inductively coupled plasma magnetron sputtering (ICP-MS) and microwave amplified magnetron sputtering, is discussed as well as the high power impulse magnetron sputtering (HIPIMS), the self-sustained sputtering (SSS) magnetron, and the hollow cathode magnetron (HCM) sputtering discharges. Furthermore, filtered arc-deposition is discussed due to its importance as an IPVD technique. Examples of the importance of the IPVD-techniques for growth of thin films with improved adhesion, improved microstructures, improved coverage of complex shaped substrates, and increased reactivity with higher deposition rate in reactive processes are reviewed

  14. Plasma Assisted Combustion: Flame Regimes and Kinetic Studies

    Science.gov (United States)

    2015-01-05

    Schauer, Yiguang Ju, Schlieren Imaging and Pulsed Detonation Engine Testing of Ignition by a Nanosecond Repetitively Pulsed Discharge , submitted to...diffusional cool flames • A heated counterflow burner integrated with vaporization system1 • n-heptane/nitrogen vs. oxygen/ ozone • Ozone generator...micro-DBD) produces 2- 5 % of ozone in oxygen stream, depending on oxygen flow rate • Speciation profiles by using a micro-probe sampling with a

  15. Thermo-physical properties of epoxy nanocomposites reinforced by carbon nanotubes and vapor grown carbon fibers

    International Nuclear Information System (INIS)

    Miyagawa, Hiroaki; Rich, Michael J.; Drzal, Lawrence T.

    2006-01-01

    In this study, the thermo-physical properties of epoxy nanocomposites reinforced by fluorinated single wall carbon nanotubes (FSWCNT) and vapor grown carbon fibers (VGCF) were investigated. A sonication technique using a suspension of FSWCNT and VGCF in acetone was utilized to process nanocomposites in anhydride-cured epoxy. The viscoelastic properties of the nanocomposites were measured with dynamic mechanical analysis. The glass transition temperature decreased approximately 30 deg. C with an addition of 0.14 vol.% (0.2 wt.%) FSWCNT. The depression in T g is attributed to non-stoichiometric balance of the epoxy matrix caused by the fluorine on single wall carbon nanotubes. The correct amount of the anhydride curing agent needed to achieve stoichiometry was experimentally determined by DMA measurements. After adjusting the amount of the anhydride curing agent for stoichiometry, the storage modulus of the epoxy at room temperature increased 0.63 GPa with the addition of only 0.21 vol.% (0.30 wt.%) of FSWCNT, a 20% improvement compared with the anhydride-cured neat epoxy. For VGCF, the storage modulus at room temperature increased 0.48 GPa with the addition of only 0.94 vol.% (1.5 wt.%) and then reached a plateau for larger amounts of VGCF. To understand the influence of VGCF on thermo-physical properties, the microstructure of the nanocomposites was interrogated using transmission electron microscopy (TEM). This study discusses the chemical effects of fluorine on matrix properties and the effect of stoichiometric balance on the thermo-physical properties of nanocomposites

  16. Oxidation Protection Systems for Carbon-Carbon Composites Formed by Chemical Vapor Deposition and Plasma Assisted Chemical Vapor Deposition Techniques

    Science.gov (United States)

    1992-04-22

    Illinois University at Carbondale, 1991, in printing. I 42. E. Tatarzycki, ABS Report-4538216:#3, 10, 1990. 43. C. Ju, et. al., Proc. of 6th Materials...transducer, ie. a more positive scaleI I 34 thickness of fairly continuous conversion layer carbon 10 , •O.0000 resina 0 0 Fiber O0c00.a 0 Bundlea • 06...at 13000C, 0.1 atm. 1 93 IZ- ... an rI pia irgaho tea-ccv~ ab .. au .re ;--24- Oo. C:caI micrograpt~h ofcin th e csr ossivc sczrbc2 ccirzza Fck

  17. A Plasma-Assisted Route to the Rapid Preparation of Transition-Metal Phosphides for Energy Conversion and Storage

    KAUST Repository

    Liang, Hanfeng

    2017-06-06

    Transition-metal phosphides (TMPs) are important materials that have been widely used in catalysis, supercapacitors, batteries, sensors, light-emitting diodes, and magnets. The physical and chemical structure of a metal phosphide varies with the method of preparation as the electronic, catalytic, and magnetic properties of the metal phosphides strongly depend on their synthesis routes. Commonly practiced processes such as solid-state synthesis and ball milling have proven to be reliable routes to prepare TMPs but they generally require high temperature and long reaction time. Here, a recently developed plasma-assisted conversion route for the preparation of TMPs is reviewed, along with their applications in energy conversion and storage, including water oxidation electrocatalysis, sodium-ion batteries, and supercapacitors. The plasma-assisted synthetic route should open up a new avenue to prepare TMPs with tailored structure and morphology for various applications. In fact, the process may be further extended to the synthesis of a wide range of transition-metal compounds such as borides and fluorides at low temperature and in a rapid manner.

  18. Fabrication and characterization of Ni-YSZ anode functional coatings by electron beam physical vapor deposition

    International Nuclear Information System (INIS)

    Meng, B.; Sun, Y.; He, X.D.; Peng, J.H.

    2009-01-01

    Two kinds of NiO-YSZ (yttria-stabilized zirconia) coatings, respectively with uniform and gradient distributions of NiO content along the coating thickness direction, were prepared by electron beam physical vapor deposition (EB-PVD) via adjusting electron beam currents. Then uniform and graded Ni-YSZ coatings were obtained from corresponding NiO-YSZ coatings after a reduction treatment. For uniform Ni-YSZ coating, the composition and porosity distributions along the coating thickness were uniform. The specific surface area and total pore volume for this coating could reach up to 4.330 m 2 g -1 and 0.0346 cm 3 g -1 respectively. The area specific resistance (ASR) of this coating kept increasing with the rise in temperature and an ASR of 2.1 x 10 -5 Ω cm 2 was obtained at 600 o C. For graded Ni-YSZ coating, a gradient in Ni content and porosity was realized along the coating thickness. A high porosity of up to 33% was achieved in the part of the coating close to the substrate, while a low porosity of 10% was obtained in the part close to coating surface.

  19. Chemical vapor deposition diamond based multilayered radiation detector: Physical analysis of detection properties

    International Nuclear Information System (INIS)

    Almaviva, S.; Marinelli, Marco; Milani, E.; Prestopino, G.; Tucciarone, A.; Verona, C.; Verona-Rinati, G.; Angelone, M.; Pillon, M.; Dolbnya, I.; Sawhney, K.; Tartoni, N.

    2010-01-01

    Recently, solid state photovoltaic Schottky diodes, able to detect ionizing radiation, in particular, x-ray and ultraviolet radiation, have been developed at the University of Rome 'Tor Vergata'. We report on a physical and electrical properties analysis of the device and a detailed study of its detection capabilities as determined by its electrical properties. The design of the device is based on a metal/nominally intrinsic/p-type diamond layered structure obtained by microwave plasma chemical vapor deposition of homoepitaxial single crystal diamond followed by thermal evaporation of a metallic contact. The device can operate in an unbiased mode by using the built-in potential arising from the electrode-diamond junction. We compare the expected response of the device to photons of various energies calculated through Monte Carlo simulation with experimental data collected in a well controlled experimental setup i.e., monochromatic high flux x-ray beams from 6 to 20 keV, available at the Diamond Light Source synchrotron in Harwell (U.K.).

  20. Ultras-stable Physical Vapor Deposited Amorphous Teflon Films with Extreme Fictive Temperature Reduction

    Science.gov (United States)

    McKenna, Gregory; Yoon, Heedong; Koh, Yung; Simon, Sindee

    In the present work, we have produced highly stable amorphous fluoropolymer (Teflon AF® 1600) films to study the calorimetric and relaxation behavior in the deep in the glassy regime. Physical vapor deposition (PVD) was used to produce 110 to 700 nm PVD films with substrate temperature ranging from 0.70 Tg to 0.90 Tg. Fictive temperature (Tf) was measured using Flash DSC with 600 K/s heating and cooling rates. Consistent with prior observations for small molecular weight glasses, large enthalpy overshoots were observed in the stable amorphous Teflon films. The Tf reduction for the stable Teflon films deposited in the vicinity of 0.85 Tg was approximately 70 K compared to the Tgof the rejuvenated system. The relaxation behavior of stable Teflon films was measured using the TTU bubble inflation technique and following Struik's protocol in the temperature range from Tf to Tg. The results show that the relaxation time decreases with increasing aging time implying that devitrification is occurring in this regime.

  1. Morphology and photoresponse of crystalline antimony film grown on mica by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    Shafa Muhammad

    2016-09-01

    Full Text Available Antimony is a promising material for the fabrication of photodetectors. This study deals with the growth of a photosensitive thin film by the physical vapor deposition (PVD of antimony onto mica surface in a furnace tube. The geometry of the grown structures was studied via scanning electron microscopy (SEM, X-ray diffraction (XRD, energy-dispersive X-ray spectroscopy (EDX and elemental diffraction analysis. XRD peaks of the antimony film grown on mica mostly matched with JCPDF Card. The formation of rhombohedral crystal structures in the film was further confirmed by SEM micrographs and chemical composition analysis. The Hall measurements revealed good electrical conductivity of the film with bulk carrier concentration of the order of 1022 Ω·cm-3 and mobility of 9.034 cm2/Vs. The grown film was successfully tested for radiation detection. The photoresponse of the film was evaluated using its current-voltage characteristics. These investigations revealed that the photosensitivity of the antimony film was 20 times higher than that of crystalline germanium.

  2. Magnetron target designs to improve wafer edge trench filling in ionized metal physical vapor deposition

    International Nuclear Information System (INIS)

    Lu Junqing; Yoon, Jae-Hong; Shin, Keesam; Park, Bong-Gyu; Yang Lin

    2006-01-01

    Severe asymmetry of the metal deposits on the trench sidewalls occurs near the wafer edge during low pressure ionized metal physical vapor deposition of Cu seed layer for microprocessor interconnects. To investigate this process and mitigate the asymmetry, an analytical view factor model based on the analogy between metal sputtering and diffuse thermal radiation was constructed. The model was validated based on the agreement between the model predictions and the reported experimental values for the asymmetric metal deposition at trench sidewalls near the wafer edge for a 200 mm wafer. This model could predict the thickness of the metal deposits across the wafer, the symmetry of the deposits on the trench sidewalls at any wafer location, and the angular distributions of the metal fluxes arriving at any wafer location. The model predictions for the 300 mm wafer indicate that as the target-to-wafer distance is shortened, the deposit thickness increases and the asymmetry decreases, however the overall uniformity decreases. Up to reasonable limits, increasing the target size and the sputtering intensity for the outer target portion significantly improves the uniformity across the wafer and the symmetry on the trench sidewalls near the wafer edge

  3. Solar physical vapor deposition: A new approach for preparing magnesium titanate nanopowders

    Energy Technology Data Exchange (ETDEWEB)

    Apostol, Irina [S.C. IPEE Amiral Trading Impex S.A., 115300 Curtea de Arges (Romania); Saravanan, K. Venkata, E-mail: vsk@ua.pt [Department of Materials and Ceramic Engineering, Centre for Research in Ceramics and Composite Materials, CICECO, University of Aveiro, 3810-093 Aveiro (Portugal); Monty, Claude J.A. [CNRS-PROMES Laboratory, Odeillo 66120, Font Romeu (France); Vilarinho, Paula M. [Department of Materials and Ceramic Engineering, Centre for Research in Ceramics and Composite Materials, CICECO, University of Aveiro, 3810-093 Aveiro (Portugal)

    2013-11-15

    Solar energy is a major factor in the equation of energy, because of the unlimited potential of the sun that eclipses all other renewable sources of energy. Solar physical vapor deposition (SPVD) is a core innovative, original and environmentally friendly process to prepare nanocrystalline materials in a powder form. The principle of this process is to melt the material under concentrated solar radiation, which evaporates and condenses as nanopowders on a cold surface. We synthesized nanopowders of magnesium titanate by the SPVD process at PROMES Laboratory in Odeillo-Font Romeu, France. The SPVD system consists of a parabolic mirror concentrator, a mobile plane mirror (“heliostat”) tracking the sun and a solar reactor “heliotron”. The synthesized nanopowders were analyzed by X-ray diffraction (XRD) to know their crystalline structure and scanning electron microscopy (SEM) was used for determining the surface morphology. We have shown that the characteristics of obtained nanotitanates were determined by the targets’ composition and SPVD process parameters such as the working pressure inside the solar reactor and evaporation duration (process time).

  4. Planar structured perovskite solar cells by hybrid physical chemical vapor deposition with optimized perovskite film thickness

    Science.gov (United States)

    Wei, Xiangyang; Peng, Yanke; Jing, Gaoshan; Cui, Tianhong

    2018-05-01

    The thickness of perovskite absorber layer is a critical parameter to determine a planar structured perovskite solar cell’s performance. By modifying the spin coating speed and PbI2/N,N-dimethylformamide (DMF) solution concentration, the thickness of perovskite absorber layer was optimized to obtain high-performance solar cells. Using a PbI2/DMF solution of 1.3 mol/L, maximum power conversion efficiency (PCE) of a perovskite solar cell is 15.5% with a perovskite film of 413 nm at 5000 rpm, and PCE of 14.3% was also obtained for a solar cell with a perovskite film of 182 nm thick. It is derived that higher concentration of PbI2/DMF will result in better perovskite solar cells. Additionally, these perovskite solar cells are highly uniform. In 14 sets of solar cells, standard deviations of 11 sets of solar cells were less than 0.50% and the smallest standard deviation was 0.25%, which demonstrates the reliability and effectiveness of hybrid physical chemical vapor deposition (HPCVD) method.

  5. Electrical characterization of 6H-SiC grown by physical vapor transport method

    Energy Technology Data Exchange (ETDEWEB)

    Zaremba, G., E-mail: gzaremba@ite.waw.p [Institute of Electron Technology, Department of Analysis of Semiconductor Nanostructures, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Kaniewska, M.; Jung, W. [Institute of Electron Technology, Department of Analysis of Semiconductor Nanostructures, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Guziewicz, M. [Institute of Electron Technology, Department of Semiconductor Processing for Photonics, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Grasza, K. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warsaw (Poland)

    2009-11-25

    Deep level transient spectroscopy (DLTS) and capacitance versus voltage (C-V) measurements have been used to study the electrical properties of electron traps in n-type 6H-silicon carbide (SiC) grown by physical vapor transport (PVT) technique, designed as Schottky diodes. Ir Schottky- and Ni ohmic-contacts were deposited by sputtering. Current versus voltage (I-V) measurements showed that sputter deposition of the Schottky contact yields diodes with a reduced barrier height and poor rectification characteristics. Four main electron traps revealed in DLTS spectra have activation energies at 0. 39, 0.41, 0,66, and 0.74 eV below the conduction band. Based on a comparison made with electron traps reported in the literature, we conclude that three of them are well-known traps found in the as-grown or irradiated material. There was no emission signature in the literature to make such a correspondence for the trap at 0.74 eV. Strongly nonhomogenous spatial distribution with a tendency of the trap to accumulation at the surface was found by DLTS and C-V profiling. This together with the fact that the trap at 0.74 eV has not been previously reported in as-grown or processed material makes it possible that the trap is sputter deposition induced defect.

  6. Hybrid Physical Chemical Vapor Deposition of Superconducting Magnesium Diboride Coatings for Large Scale Radio Frequency Cavities

    Science.gov (United States)

    Lee, Namhoon; Withanage, Wenura; Tan, Teng; Wolak, Matthaeus; Xi, Xiaoxing

    2016-03-01

    Magnesium diboride (MgB2) is considered to be a great candidate for next generation superconducting radio frequency (SRF) cavities due to its higher critical temperature Tc (40 K) and increased thermodynamic critical field Hc compared to other conventional superconductors. These properties significantly reduce the BCS surface resistance (RsBCS)and residual resistance (Rres) according to theoretical studies and suggest the possibility of an enhanced accelerating field (Eacc) . We have investigated the possibility of coating the inner surface of a 3 GHz SRF cavity with MgB2 by using a hybrid physical-vapor deposition (HPCVD) system which was modified for this purpose. To simulate a real 3 GHz SRF cavity, a stainless steel mock cavity has been employed for the study. The film quality was characterized on small substrates that were placed at selected locations within the cavity. MgB2 films on stainless steel foils, niobium pieces and SiC substrates showed transition temperatures of above 36 K. Dielectric resonance measurements resulted in promising Q values as obtained for the MgB2 films grown on the various substrates. By employing the HPCVD technique, a uniform film was achieved across the cavity interior, demonstrating the feasibility of HPCVD for MgB2 coatings for SRF cavities.

  7. Electron beam physical vapor deposition of thin ruby films for remote temperature sensing

    International Nuclear Information System (INIS)

    Li Wei; Coppens, Zachary J.; Greg Walker, D.; Valentine, Jason G.

    2013-01-01

    Thermographic phosphors (TGPs) possessing temperature-dependent photoluminescence properties have a wide range of uses in thermometry due to their remote access and large temperature sensitivity range. However, in most cases, phosphors are synthesized in powder form, which prevents their use in high resolution micro and nanoscale thermal microscopy. In the present study, we investigate the use of electron beam physical vapor deposition to fabricate thin films of chromium-doped aluminum oxide (Cr-Al 2 O 3 , ruby) thermographic phosphors. Although as-deposited films were amorphous and exhibited weak photoluminescence, the films regained the stoichiometry and α-Al 2 O 3 crystal structure of the combustion synthesized source powder after thermal annealing. As a consequence, the annealed films exhibit both strong photoluminescence and a temperature-dependent lifetime that decreases from 2.9 ms at 298 K to 2.1 ms at 370 K. Ruby films were also deposited on multiple substrates. To ensure a continuous film with smooth surface morphology and strong photoluminescence, we use a sapphire substrate, which is thermal expansion coefficient and lattice matched to the film. These thin ruby films can potentially be used as remote temperature sensors for probing the local temperatures of micro and nanoscale structures.

  8. Physical vapor deposited films of a perylene derivative: supramolecular arrangement and thermal stability

    Energy Technology Data Exchange (ETDEWEB)

    Fernandes, Jose Diego; Alessio, Priscila; Silva, Matheus Rodrigues Medeiros; Aroca, Ricardo Flavio; Souza, Agda Eunice de; Constantino, Carlos Jose Leopoldo, E-mail: case@fct.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Presidente Prudente, SP (Brazil). Dept. de Fisica

    2017-07-15

    The analysis of supramolecular arrangement is essential to understand the role of this key factor on the optical and electrical properties of organic thin films. In this work, thin solid films of bis(phenethylimido) perylene (PhPTCD) fabricated using physical vapor deposition (PVD) technique (thermal evaporation), deposited simultaneously onto different substrates (Ag mirror, Ge, and quartz plates) contingent on the characterization technique. The main objective is to study the PhPTCD supramolecular arrangement and the thermal stability of this arrangement in PVD films. The ultraviolet-visible absorption reveals a controlled growth of the PVD films, and the micro-Raman scattering data show that the PhPTCD molecule is not thermally degraded in the conditions of these experiments. The microscopy also shows a homogeneous morphological surface of the PVD film at macro and micro scales, with molecular aggregates at nanoscale. Besides, the PVD film roughness does not follow substrate roughness. The X-ray diffraction indicates a crystalline structure for PhPTCD powder and an amorphous form for PhPTCD PVD film. The infrared absorption spectroscopy points to a preferential flat-on organization of the molecules in the PVD films. In addition, the annealing process (200 deg C for 20 minutes) does not affect the supramolecular arrangement of the PhPTCD PVD films. (author)

  9. Etching characteristics and application of physical-vapor-deposited amorphous carbon for multilevel resist

    International Nuclear Information System (INIS)

    Kim, H. T.; Kwon, B. S.; Lee, N.-E.; Park, Y. S.; Cho, H. J.; Hong, B.

    2008-01-01

    For the fabrication of a multilevel resist (MLR) based on a very thin, physical-vapor-deposited (PVD) amorphous carbon (a-C) layer, the etching characteristics of the PVD a-C layer with a SiO x hard mask were investigated in a dual-frequency superimposed capacitively coupled plasma etcher by varying the following process parameters in O 2 /N 2 /Ar plasmas: high-frequency/low-frequency combination (f HF /f LF ), HF/LF power ratio (P HF /P LF ), and O 2 and N 2 flow rates. The very thin nature of the a-C layer helps to keep the aspect ratio of the etched features low. The etch rate of the PVD a-C layer increased with decreasing f HF /f LF combination and increasing P LF and was initially increased but then decreased with increasing N 2 flow rate in O 2 /N 2 /Ar plasmas. The application of a 30 nm PVD a-C layer in the MLR structure of ArF PR/BARC/SiO x /PVD a-C/TEOS oxide supported the possibility of using a very thin PVD a-C layer as an etch-mask layer for the TEOS-oxide layer

  10. Physical vapor deposited films of a perylene derivative: supramolecular arrangement and thermal stability

    International Nuclear Information System (INIS)

    Fernandes, Jose Diego; Alessio, Priscila; Silva, Matheus Rodrigues Medeiros; Aroca, Ricardo Flavio; Souza, Agda Eunice de; Constantino, Carlos Jose Leopoldo

    2017-01-01

    The analysis of supramolecular arrangement is essential to understand the role of this key factor on the optical and electrical properties of organic thin films. In this work, thin solid films of bis(phenethylimido) perylene (PhPTCD) fabricated using physical vapor deposition (PVD) technique (thermal evaporation), deposited simultaneously onto different substrates (Ag mirror, Ge, and quartz plates) contingent on the characterization technique. The main objective is to study the PhPTCD supramolecular arrangement and the thermal stability of this arrangement in PVD films. The ultraviolet-visible absorption reveals a controlled growth of the PVD films, and the micro-Raman scattering data show that the PhPTCD molecule is not thermally degraded in the conditions of these experiments. The microscopy also shows a homogeneous morphological surface of the PVD film at macro and micro scales, with molecular aggregates at nanoscale. Besides, the PVD film roughness does not follow substrate roughness. The X-ray diffraction indicates a crystalline structure for PhPTCD powder and an amorphous form for PhPTCD PVD film. The infrared absorption spectroscopy points to a preferential flat-on organization of the molecules in the PVD films. In addition, the annealing process (200 deg C for 20 minutes) does not affect the supramolecular arrangement of the PhPTCD PVD films. (author)

  11. Nucleation and growth of microdroplets of ionic liquids deposited by physical vapor method onto different surfaces

    Science.gov (United States)

    Costa, José C. S.; Coelho, Ana F. S. M. G.; Mendes, Adélio; Santos, Luís M. N. B. F.

    2018-01-01

    Nanoscience and technology has generated an important area of research in the field of properties and functionality of ionic liquids (ILs) based materials and their thin films. This work explores the deposition process of ILs droplets as precursors for the fabrication of thin films, by means of physical vapor deposition (PVD). It was found that the deposition (by PVD on glass, indium tin oxide, graphene/nickel and gold-coated quartz crystal surfaces) of imidazolium [C4mim][NTf2] and pyrrolidinium [C4C1Pyrr][NTf2] based ILs generates micro/nanodroplets with a shape, size distribution and surface coverage that could be controlled by the evaporation flow rate and deposition time. No indication of the formation of a wetting-layer prior to the island growth was found. Based on the time-dependent morphological analysis of the micro/nanodroplets, a simple model for the description of the nucleation process and growth of ILs droplets is presented. The proposed model is based on three main steps: minimum free area to promote nucleation; first order coalescence; second order coalescence.

  12. Low-Temperature Cu-Cu Bonding Using Silver Nanoparticles Fabricated by Physical Vapor Deposition

    Science.gov (United States)

    Wu, Zijian; Cai, Jian; Wang, Junqiang; Geng, Zhiting; Wang, Qian

    2018-02-01

    Silver nanoparticles (Ag NPs) fabricated by physical vapor deposition (PVD) were introduced in Cu-Cu bonding as surface modification layer. The bonding structure consisted of a Ti adhesive/barrier layer and a Cu substrate layer was fabricated on the silicon wafer. Ag NPs were deposited on the Cu surface by magnetron sputtering in a high-pressure environment and a loose structure with NPs was obtained. Shear tests were performed after bonding, and the influences of PVD pressure, bonding pressure, bonding temperature and annealing time on shear strength were assessed. Cu-Cu bonding with Ag NPs was accomplished at 200°C for 3 min under the pressure of 30 MPa without a post-annealing process, and the average bonding strength of 13.99 MPa was reached. According to cross-sectional observations, a void-free bonding interface with an Ag film thickness of around 20 nm was achieved. These results demonstrated that a reliable low-temperature short-time Cu-Cu bonding was realized by the sintering process of Ag NPs between the bonding pairs, which indicated that this bonding method could be a potential candidate for future ultra-fine pitch 3D integration.

  13. Preparation of Pb(Zr, Ti)O3 Thin Films by Plasma-Assisted Sputtering

    Science.gov (United States)

    Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Suzuki, Kouji

    1999-09-01

    A novel plasma-assisted RF magnetron sputtering system with an immersed coil antenna between a target and a substrate was applied for preparing Pb(Zr, Ti)O3 (PZT) thin films. The antenna enabled the generation of inductively coupled plasma (ICP) independently of the target RF source. The plasma assisted by the antenna resulted in the changes of ion fluxes and these energy distributions irradiating to the substrate. The crystalline phase of the deposited PZT thin films was occupied by the perovskite phase depending on the antenna power. In addition, a high deposition rate, modified uniformity of film thickness, and a dense film structure with large columnar grains were obtained as a result of effects of the assisted plasma. The application of the plasma-assisted sputtering method may enable the preparation of PZT thin films that haveexcellent properties.

  14. Thermal barrier coatings of rare earth materials deposited by electron beam-physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu Zhenhua [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); He Limin, E-mail: he_limin@yahoo.co [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Chen Xiaolong; Zhao Yu [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Cao Xueqiang, E-mail: xcao@ciac.jl.c [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

    2010-10-15

    Thermal barrier coatings (TBCs) have very important applications in gas turbines for higher thermal efficiency and protection of components at high temperature. TBCs of rare earth materials such as lanthanum zirconate (La{sub 2}Zr{sub 2}O{sub 7}, LZ), lanthanum cerate (La{sub 2}Ce{sub 2}O{sub 7}, LC), lanthanum cerium zirconate (La{sub 2}(Zr{sub 0.7}Ce{sub 0.3}){sub 2}O{sub 7}, LZ7C3) were prepared by electron beam-physical vapor deposition (EB-PVD). The composition, crystal structure, cross-sectional morphology and cyclic oxidation behavior of these coatings were studied. These coatings have partially deviated from their original compositions due to the different evaporation rates of oxides, and the deviation could be reduced by properly controlling the deposition condition. A double ceramic layer-thermal barrier coatings (DCL-TBCs) of LZ7C3 and LC could also be deposited with a single LZ7C3 ingot by properly controlling the deposition energy. LaAlO{sub 3} is formed due to the chemical reaction between LC and Al{sub 2}O{sub 3} in the thermally grown oxide (TGO) layer. The failure of DCL-TBCs is a result of the sintering-induced of LZ7C3 coating and the chemical incompatibility of LC and TGO. Since no single material that has been studied so far satisfies all the requirements for high temperature applications, DCL-TBCs are an important development direction of TBCs.

  15. Reactive physical vapor deposition of TixAlyN: Integrated plasma-surface modeling characterization

    International Nuclear Information System (INIS)

    Zhang Da; Schaeffer, J.K.

    2004-01-01

    Reactive physical vapor deposition (RPVD) has been widely applied in the microelectronic industry for producing thin films. Fundamental understanding of RPVD mechanisms is needed for successful process development due to the high sensitivity of film properties on process conditions. An integrated plasma equipment-target nitridation modeling infrastructure for RPVD has therefore been developed to provide mechanistic insights and assist optimal process design. The target nitridation model computes target nitride coverage based on self-consistently derived plasma characteristics from the plasma equipment model; target sputter yields needed in the plasma equipment model are also self-consistently derived taking into account the yield-suppressing effect from nitridation. The integrated modeling infrastructure has been applied to investigating RPVD processing with a Ti 0.8 Al 0.2 compound target and an Ar/N 2 gas supply. It has been found that the process produces athermal metal neutrals as the primary deposition precursor. The metal stoichiometry in the deposited film is close to the target composition due to the predominance of athermal species in the flux that reaches the substrate. Correlations between process parameters (N 2 flow, target power), plasma characteristics, surface conditions, and deposition kinetics have been studied with the model. The deposition process is characterized by two regimes when the N 2 flow rate is varied. When N 2 is dilute relative to argon, target nitride coverage increases rapidly with increasing N 2 flow. The sputter yield and deposition rate consequently decrease. For less dilute N 2 mixtures, the sputter yield and deposition rate are stable due to the saturation of target nitridation. With increasing target power, the electron density increases nearly linearly while the variation of N generation is much smaller. Target nitridation and its suppression of the sputter yield saturate at high N 2 flow rendering these parameters

  16. CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    D. Santos-Cruz

    Full Text Available Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (<300 °C, it is feasible to obtained coper (I oxide whereas at temperatures higher than 300 °C, the copper (II oxide is formed. The band gap is found to vary in between 1.54 and 2.21 eV depending on the oxidation temperature. Both oxides present p-type electrical conductivity. The carrier concentration has been increased as a function of the oxidation temperature from 1.61 × 1012 at 250 °C to 6.8 × 1012 cm−3 at 400 °C. The mobility has attained its maximum of 34.5 cm2 V−1 s−1 at a temperature of 300 °C, and a minimum of 13.8 cm2 V−1 s−1 for 400 °C. Finally, the resistivity of copper oxide films decreases as a function of oxidation temperature from 5.4 × 106 to 2.4 × 105 Ω-cm at 250 and 400 °C, respectively. Keywords: PVD, Oxidizing annealed treatment, Non-toxic material

  17. Using laser absorption spectroscopy to monitor composition and physical properties of metal vapors

    International Nuclear Information System (INIS)

    Berzins, L.V.

    1993-01-01

    The Atomic Vapor Laser Isotope Separation (AVLIS) program has been using laser absorption spectroscopy to monitor vapor densities for over 15 years. Laser absorption spectroscopy has proven itself to be an accurate and reliable method to monitor both density and composition. During this time the diagnostic has moved from a research tool toward a robust component of a process control system. The hardware used for this diagnostic is discussed elsewhere at this symposium. This paper describes how the laser absorption spectroscopy diagnostic is used as a component of a process control system as well as supplying detailed measurements on vapor densities, composition, flow velocity, internal and kinetic temperatures, and constituent distributions. Examples will be drawn from the uranium AVLIS program. In addition potential applications such as composition control in the production of metal matrix composites or aircraft alloys will be discussed

  18. Plasma assisted combustion : Interaction of a flat flame with a nanosecond dielectric barrier discharge plasma

    NARCIS (Netherlands)

    Elkholy, A.H.E.; van Oijen, J.A.; de Goey, L.P.H.

    2016-01-01

    Using of non-equilibrium Plasma-assisted for ignition, combustion and high speed flow applications are rapidly developing in the last decades due to its ability to produce a large amount of radicals and excited species. Which has a great potential in flame stabilization and emission control.

  19. Plasma-Assisted Synthesis of NiCoP for Efficient Overall Water Splitting

    KAUST Repository

    Liang, Hanfeng; Gandi, Appala; Anjum, Dalaver H.; Wang, Xianbin; Schwingenschlö gl, Udo; Alshareef, Husam N.

    2016-01-01

    be further enhanced by substitution with extrinsic metals, though very little work has been conducted in this area. Here we present for the first time a novel PH plasma-assisted approach to convert NiCo hydroxides into ternary NiCoP. The obtained Ni

  20. Large-aperture plasma-assisted deposition of inertial confinement fusion laser coatings.

    Science.gov (United States)

    Oliver, James B; Kupinski, Pete; Rigatti, Amy L; Schmid, Ansgar W; Lambropoulos, John C; Papernov, Semyon; Kozlov, Alexei; Spaulding, John; Sadowski, Daniel; Chrzan, Z Roman; Hand, Robert D; Gibson, Desmond R; Brinkley, Ian; Placido, Frank

    2011-03-20

    Plasma-assisted electron-beam evaporation leads to changes in the crystallinity, density, and stresses of thin films. A dual-source plasma system provides stress control of large-aperture, high-fluence coatings used in vacuum for substrates 1m in aperture.

  1. Microstructural Effects and Properties of Non-line-of-Sight Coating Processing via Plasma Spray-Physical Vapor Deposition

    Science.gov (United States)

    Harder, Bryan J.; Zhu, Dongming; Schmitt, Michael P.; Wolfe, Douglas E.

    2017-08-01

    Plasma spray-physical vapor deposition (PS-PVD) is a unique processing method that bridges the gap between conventional thermal spray and vapor phase methods, and enables highly tailorable coatings composed of a variety of materials in thin, dense layers or columnar microstructures with modification of the processing conditions. The strengths of this processing technique are material and microstructural flexibility, deposition speed, and potential for non-line-of-sight (NLOS) capability by vaporization of the feedstock material. The NLOS capability of PS-PVD is investigated here using yttria-stabilized zirconia and gadolinium zirconate, which are materials of interest for turbine engine applications. PS-PVD coatings were applied to static cylindrical substrates approximately 6-19 mm in diameter to study the coating morphology as a function of angle. In addition, coatings were deposited on flat substrates under various impingement configurations. Impingement angle had significant effects on the deposition mode, and microscopy of coatings indicated that there was a shift in the deposition mode at approximately 90° from incidence on the cylindrical samples, which may indicate the onset of more turbulent flow and PVD-like growth. Coatings deposited at non-perpendicular angles exhibited a higher density and nearly a 2× improvement in erosion performance when compared to coatings deposited with the torch normal to the surface.

  2. Plasma-assisted self-formation of nanotip arrays on the surface of Cu(In,Ga)Se{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zimin, Sergey P.; Mokrov, Dmitry A. [Yaroslavl State University (Russian Federation); Gorlachev, Egor S.; Amirov, Ildar I.; Naumov, Viktor V. [Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl (Russian Federation); Gremenok, Valery F. [Scientific-Practical Materials Research Center, NAS of Belarus, Minsk (Belarus); Bente, Klaus [Applied Mineralogy, University Tuebingen (Germany); Kim, Woo Y. [Fusion Research Center, Hoseo University, Asan-City (Korea, Republic of)

    2017-06-15

    In this paper, we report on the phenomenon of nanostructure self-formation on the surface of Cu(In,Ga)Se{sub 2} (CIGS) thin films during inductively coupled argon plasma treatment with its duration varied from 10 to 120 s. The initial films were grown on glass substrates using the selenization technique. During the CIGS film surface treatment in the high-density low-pressure radio-frequency inductively coupled argon plasma there took place a formation of arrays of uniform vertical nanostructures, which shape with increasing processing duration changed from nanocones to nanorods and back to nanocones. A model of the nanotip plasma-assisted self-formation associated with the implementation of micromasking and vapor-liquid-solid mechanisms involving metallic In-Ga (In-Ga-Cu) liquid alloy droplets is proposed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Room temperature photoluminescence from In{sub x}Al{sub (1−x)}N films deposited by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kong, W., E-mail: wei.kong@duke.edu; Jiao, W. Y.; Kim, T. H.; Brown, A. S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Mohanta, A. [Oak Ridge Institute for Science and Education, Research Participation Program, U.S. Army Aviation and Missile Research, Development and Engineering Center (AMRDEC), Redstone Arsenal, Alabama 35898 (United States); Roberts, A. T. [Charles Bowden Research Lab, Army Aviation and Missile RD and E Center, Redstone Arsenal, Alabama 35898 (United States); Fournelle, J. [Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706 (United States); Losurdo, M. [Plasma Chemistry Research Center-CNR, via Orabona, 4-70126 Bari (Italy); Everitt, H. O. [Charles Bowden Research Lab, Army Aviation and Missile RD and E Center, Redstone Arsenal, Alabama 35898 (United States); Department of Physics, Duke University, Durham, North Carolina 27708 (United States)

    2014-09-29

    InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of In{sub x}Al{sub (1−x)}N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

  4. MD simulation: determination of the physical properties and surface vaporization analysis of beryllium armours

    International Nuclear Information System (INIS)

    Prinzio, M. Di; Aquaro, D.

    2006-01-01

    The erosion of the divertor and of the first wall determined on the base of the anticipated operating conditions, is a critical issue that could affect the performance and the operating schedule of the nuclear fusion reactor ITER. This paper deals with the analysis of beryllium thermal properties by means of MD simulations, in order to better predict thermal behaviour of beryllium armoured PFCs in fusion devices. The importance of this analysis is clearly connected to thermal response evaluation of PFCs to high heat flux exposure, during off-normal events and Edge Localized Modes. The ensuing strong over-heating, in fact, produces material ablation through vaporization of surface material layers and possible loss of melting material. The overall PFCs erosion has bearings on plasma contamination, due to eroded material transport, and components lifetime, due to armour thickness reduction. An important feature of beryllium is its high vapour pressure. During thermal transients the strong vaporization keeps surface temperature relatively low but eroded thickness results high as well. Small changes in beryllium vapour pressure produce not negligible differences in thermal analyses results. On the basis of available force fields, classical Molecular Dynamics simulations have been carried out in order to better understand surface vaporization in tokamak conditions and to evaluate the effect of beryllium oxides formation. This effect has been successfully modelled by MD simulation, carried out with Moldy code. Morse stretching and bending potential for Be-O bond simulation have been used, and partial charges method, accounting for molecular polarity, has been employed. Since during short thermal transients, such as ELMs, only a few microns of Be armour will be overheated and reach melting threshold, the effective thermal conductivity is very important in determining the temperature evolution of surface layers and the ensuing erosion. Thermal conductivity can be evaluated

  5. Effect of zirconium nitride physical vapor deposition coating on preosteoblast cell adhesion and proliferation onto titanium screws.

    Science.gov (United States)

    Rizzi, Manuela; Gatti, Giorgio; Migliario, Mario; Marchese, Leonardo; Rocchetti, Vincenzo; Renò, Filippo

    2014-11-01

    Titanium has long been used to produce dental implants. Problems related to its manufacturing, casting, welding, and ceramic application for dental prostheses still limit its use, which highlights the need for technologic improvements. The aim of this in vitro study was to evaluate the biologic performance of titanium dental implants coated with zirconium nitride in a murine preosteoblast cellular model. The purpose of this study was to evaluate the chemical and morphologic characteristics of titanium implants coated with zirconium nitride by means of physical vapor deposition. Chemical and morphologic characterizations were performed by scanning electron microscopy and energy dispersive x-ray spectroscopy, and the bioactivity of the implants was evaluated by cell-counting experiments. Scanning electron microscopy and energy dispersive x-ray spectroscopy analysis found that physical vapor deposition was effective in covering titanium surfaces with zirconium nitride. Murine MC-3T3 preosteoblasts were seeded onto titanium-coated and zirconium nitride-coated screws to evaluate their adhesion and proliferation. These experiments found a significantly higher number of cells adhering and spreading onto zirconium nitride-coated surfaces (Pzirconium nitride surfaces were completely covered with MC-3T3 cells. Analysis of these data indicates that the proposed zirconium nitride coating of titanium implants could make the surface of the titanium more bioactive than uncoated titanium surfaces. Copyright © 2014 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

  6. Plasma-assisted ignition and combustion: nanosecond discharges and development of kinetic mechanisms

    Science.gov (United States)

    Starikovskaia, S. M.

    2014-09-01

    This review covers the results obtained in the period 2006-2014 in the field of plasma-assisted combustion, and in particular the results on ignition and combustion triggered or sustained by pulsed nanosecond discharges in different geometries. Some benefits of pulsed high voltage discharges for kinetic study and for applications are demonstrated. The necessity of and the possibility of building a particular kinetic mechanism of plasma-assisted ignition and combustion are discussed. The most sensitive regions of parameters for plasma-combustion kinetic mechanisms are selected. A map of the pressure and temperature parameters (P-T diagram) is suggested, to unify the available data on ignition delay times, ignition lengths and densities of intermediate species reported by different authors.

  7. Plasma Assisted Ignition and Combustion at Low Initial Gas Temperatures: Development of Kinetic Mechanism

    Science.gov (United States)

    2016-10-05

    R and Pouvesle J M 2009 Experimental study of a compact nanosecond plasma gun Plasma Processes and Polymers 6 795—802 [11] Heinlin J, Morfill G...radially symmetrical geometry. The thickness of the plasma layer in the direction perpendicular to the dielectric plane is about 1 mm. The central coaxial ...Positive and negative polarity discharge at elevated pres- sures Discharge in coaxial geometry has been developed for plasma assisted ignition at high

  8. Manipulator for plasma-assisted machining of components made of materials with low machinability

    International Nuclear Information System (INIS)

    Lyaoshchukov, M.M.; Agadzhanyan, R.A.

    1984-01-01

    The All-Union Scientific-Research and Technological Institute of Pump Engineering developed, and the ''Uralgidromash'' Production Association has adopted, a manipulator with remote control for the plasma-assisted machining (PAM) of components made of materials with low machinability. The manipulator is distinguished by its universal design and can be used for machining both external and internal surfaces of the bodies of revolution and also end faces and various curvilinear surfaces

  9. Emission characteristics of kerosene-air spray combustion with plasma assistance

    Directory of Open Access Journals (Sweden)

    Xingjian Liu

    2015-09-01

    Full Text Available A plasma assisted combustion system for combustion of kerosene-air mixtures was developed to study emission levels of O2, CO2, CO, and NOx. The emission measurement was conducted by Testo 350-Pro Flue Gas Analyzer. The effect of duty ratio, feedstock gas flow rate and applied voltage on emission performance has been analyzed. The results show that O2 and CO emissions reduce with an increase of applied voltage, while CO2 and NOx emissions increase. Besides, when duty ratio or feedstock gas flow rate decreases, the same emission results would appear. The emission spectrum of the air plasma of plasma assisted combustion actuator was also registered to analyze the kinetic enhancement effect of plasma, and the generation of ozone was believed to be the main factor that plasma makes a difference in our experiment. These results are valuable for the future optimization of kerosene-fueled aircraft engine when using plasma assisted combustion devices to exert emission control.

  10. RF-plasma vapor deposition of siloxane on paper. Part 1: Physical evolution of paper surface

    Science.gov (United States)

    Sahin, Halil Turgut

    2013-01-01

    An alternative, new approach to improve the hydrophobicity and barrier properties of paper was evaluated by radio-frequency (RF) plasma octamethylcyclotetrasiloxane (OMCTSO) vapor treatment. The interaction between OMCTSO and paper, causing the increased hydophobicity, is likely through covalent bonding. The deposited thin silicone-like polymeric layer from OMCTSO plasma treatment possessed desirable hydrophobic properties. The SEM micrographs showed uniformly distributed grainy particles with various shapes on the paper surface. Deposition of the silicone polymer-like layer with the plasma treatment affects the distribution of voids in the network structure and increases the barrier against water intake and air. The water absorptivity was reduced by 44% for the OMCTSO plasma treated sheet. The highest resistance to air flow was an approximately 41% lower air permeability than virgin paper.

  11. High purity and semi-insulating 4H-SiC crystals grown by physical vapor transport

    Energy Technology Data Exchange (ETDEWEB)

    Augustine, G.; Hobgood, H.McD.; Balakrishna, V.; Dunne, G.T.; Hopkins, R.H.; Thomas, R.N. [Northrop Grumman Corp., Pittsburgh, PA (United States). Science and Technology Center; Doolittle, W.A.; Rohatgi, A. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Electrical and Computer Engineering

    1998-06-01

    High purity undoped and semi-insulating vanadium doped 4H-SiC single crystals with diameters up to 50 mm were grown by the physical vapor transport method. Undoped crystals exhibiting resistivities in the 10{sup 2} to 10{sup 3} {Omega}-cm range and photoconductive decay (PCD) lifetimes in the 2 to 9 {mu}s range, were grown from high purity SiC sublimation sources. The crystals were p-type due to the presence of residual acceptor impurities, mainly boron. The semi-insulating behavior of the vanadium doped crystals is attributed to compensation of residual acceptors by the deep level vanadium donor located near the middle of the band gap. (orig.) 6 refs.

  12. Regularly arranged indium islands on glass/molybdenum substrates upon femtosecond laser and physical vapor deposition processing

    Energy Technology Data Exchange (ETDEWEB)

    Ringleb, F.; Eylers, K.; Teubner, Th.; Boeck, T., E-mail: torsten.boeck@ikz-berlin.de [Leibniz-Institute for Crystal Growth, Max-Born-Straße 2, Berlin 12489 (Germany); Symietz, C.; Bonse, J.; Andree, S.; Krüger, J. [Bundesanstalt für Materialforschung und-prüfung (BAM), Unter den Eichen 87, Berlin 12205 (Germany); Heidmann, B.; Schmid, M. [Department of Physics, Freie Universität Berlin, Arnimalle 14, Berlin 14195 (Germany); Nanooptical Concepts for PV, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany); Lux-Steiner, M. [Nanooptical Concepts for PV, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany); Heterogeneous Material Systems, Helmholtz Zentrum Berlin, Hahn-Meitner-Platz 1, Berlin 14109 (Germany)

    2016-03-14

    A bottom-up approach is presented for the production of arrays of indium islands on a molybdenum layer on glass, which can serve as micro-sized precursors for indium compounds such as copper-indium-gallium-diselenide used in photovoltaics. Femtosecond laser ablation of glass and a subsequent deposition of a molybdenum film or direct laser processing of the molybdenum film both allow the preferential nucleation and growth of indium islands at the predefined locations in a following indium-based physical vapor deposition (PVD) process. A proper choice of laser and deposition parameters ensures the controlled growth of indium islands exclusively at the laser ablated spots. Based on a statistical analysis, these results are compared to the non-structured molybdenum surface, leading to randomly grown indium islands after PVD.

  13. High temperature dielectric properties of (BxNyOz thin films deposited using ion source assisted physical vapor deposition

    Directory of Open Access Journals (Sweden)

    N. Badi

    2015-12-01

    Full Text Available The dielectric integrity has been one of the major obstacle in bringing out capacitor devices with suitable performance characteristics at high temperatures. In this paper, BxNyOz dielectric films for high temperature capacitors solutions are investigated. The films were grown on silicon substrate by using ion source assisted physical vapor deposition technique. The as-grown films were characterized by SEM, XRD, and XPS. The capacitor structures were fabricated using BxNyOz as a dielectric and titanium as metal electrodes. The elaborated devices were subjected to electrical and thermal characterization. They exhibited low electrical loss and very good stability when subjected to high temperature for a prolonged period of time.

  14. Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    Science.gov (United States)

    Su, Ching-Hua; Sha, Yi-Gao

    1995-01-01

    The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

  15. Ion-substituted calcium phosphate coatings deposited by plasma-assisted techniques: A review.

    Science.gov (United States)

    Graziani, Gabriela; Bianchi, Michele; Sassoni, Enrico; Russo, Alessandro; Marcacci, Maurilio

    2017-05-01

    One of the main critical aspects behind the failure or success of an implant resides in its ability to fast bond with the surrounding bone. To boost osseointegration, the ideal implant material should exhibit composition and structure similar to those of biological apatite. To this aim, the most common approach is to coat the implant surface with a coating of hydroxyapatite (HA), resembling the main component of mineralized tissues. However, bone apatite is a non-stoichiometric, multi-substituted poorly-crystalline apatite, containing significant amounts of foreign ions, with high biological relevance. Ion-substituted HAs can be deposited by so called "wet methods", which are however poorly reproducible and hardly industrially feasible; at the same time bioactive coatings realized by plasma assisted method, interesting for industrial applications, are generally made of stoichiometric (i.e. un-substituted) HA. In this work, the literature concerning plasma-assisted deposition methods used to deposit ion-substituted HA was reviewed and the last advances in this field discussed. The ions taken into exam are those present in mineralized tissues and possibly having biological relevance. Notably, literature about this topic is scarce, especially relating to in vivo animal and clinical trials; further on, available studies evaluate the performance of substituted coatings from different points of view (mechanical properties, bone growth, coating dissolution, etc.) which hinders a proper evaluation of the real efficacy of ion-doped HA in promoting bone regeneration, compared to stoichiometric HA. Moreover, results obtained for plasma sprayed coatings (which is the only method currently employed for deposition at the industrial scale) were collected and compared to those of novel plasma-assisted techniques, that are expected to overcome its limitations. Data so far available on the topic were discussed to highlight advantages, limitations and possible perspectives of these

  16. Synergistic effects of non-thermal plasma-assisted catalyst and ultrasound on toluene removal.

    Science.gov (United States)

    Sun, Yongli; Zhou, Libo; Zhang, Luhong; Sui, Hong

    2012-01-01

    A wire-mesh catalyst coated by La0.8Sr0.2MnO3 was combined with a dielectric barrier discharge (DBD) reactor for toluene removal at atmospheric pressure. It was found that toluene removal efficiency and carbon dioxide selectivity were enhanced in the catalytic packed-bed reactor. In addition, ozone and nitrogen monoxide from the gas effluent byproducts decreased. This is the first time that ultrasound combined with plasma has been used for toluene removal. A synergistic effect on toluene removal was observed in the plasma-assisted ultrasound system. At the same time, the system increased toluene conversion and reduced ozone emission.

  17. Colour marking of transparent materials by laser-induced plasma-assisted ablation (LIPAA)

    International Nuclear Information System (INIS)

    Hanada, Yasutaka; Sugioka, Koji; Miyamoto, Iwao; Midorikawa, Katsumi

    2007-01-01

    We demonstrate colour marking of a transparent material using laser-induced plasma-assisted ablation (LIPAA) system. After the LIPAA process, metal thin film is deposited on the surface of the ablated groove. This feature is applied to RGB (red, green and blue) colour marking by using specific metal targets. The metal targets, for instance, are Pb 3 O 4 for red, Cr 2 O 3 for green and [Cu(C 32 H 15 ClN 8 )] for blue colour marking. Additionally, adhesion of the metal thin film deposited on the processed groove by various experimental conditions is investigated

  18. Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Losurdo, Maria [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy)]. E-mail: maria.losurdo@ba.imip.cnr.it; Giangregorio, Maria M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Capezzuto, Pio [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Brown, April S. [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Kim, Tong-Ho [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Choi, Soojeong [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States)

    2006-10-31

    GaN is grown on Si-face 4H-SiC(0 0 0 1) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation.

  19. Plasma assisted measurements of alkali metal concentrations in pressurized combustion processes

    International Nuclear Information System (INIS)

    Hernberg, R.; Haeyrinen, V.

    1995-01-01

    The plasma assisted method for continuous measurement of alkali metal concentrations in product gas flows of pressurized energy processes will be tested and applied at the 1.6 MW PFBC/G facility at Delft University of Technology in the Netherlands. Measurements will be performed during 1995 and 1996 at different stages of the research programme. The results are expected to give information about the influence of different process conditions on the generation of alkali metal vapours, the comparison of different methods for alkali measurement and the specific performance of our system. The project belongs to the Joule II extension program under contract JOU2-CT93-0431. (author)

  20. Physical vapor deposited thin films of lignins extracted from sugar cane bagasse: morphology, electrical properties, and sensing applications.

    Science.gov (United States)

    Volpati, Diogo; Machado, Aislan D; Olivati, Clarissa A; Alves, Neri; Curvelo, Antonio A S; Pasquini, Daniel; Constantino, Carlos J L

    2011-09-12

    The concern related to the environmental degradation and to the exhaustion of natural resources has induced the research on biodegradable materials obtained from renewable sources, which involves fundamental properties and general application. In this context, we have fabricated thin films of lignins, which were extracted from sugar cane bagasse via modified organosolv process using ethanol as organic solvent. The films were made using the vacuum thermal evaporation technique (PVD, physical vapor deposition) grown up to 120 nm. The main objective was to explore basic properties such as electrical and surface morphology and the sensing performance of these lignins as transducers. The PVD film growth was monitored via ultraviolet-visible (UV-vis) absorption spectroscopy and quartz crystal microbalance, revealing a linear relationship between absorbance and film thickness. The 120 nm lignin PVD film morphology presented small aggregates spread all over the film surface on the nanometer scale (atomic force microscopy, AFM) and homogeneous on the micrometer scale (optical microscopy). The PVD films were deposited onto Au interdigitated electrode (IDE) for both electrical characterization and sensing experiments. In the case of electrical characterization, current versus voltage (I vs V) dc measurements were carried out for the Au IDE coated with 120 nm lignin PVD film, leading to a conductivity of 3.6 × 10(-10) S/m. Using impedance spectroscopy, also for the Au IDE coated with the 120 nm lignin PVD film, dielectric constant of 8.0, tan δ of 3.9 × 10(-3), and conductivity of 1.75 × 10(-9) S/m were calculated at 1 kHz. As a proof-of-principle, the application of these lignins as transducers in sensing devices was monitored by both impedance spectroscopy (capacitance vs frequency) and I versus time dc measurements toward aniline vapor (saturated atmosphere). The electrical responses showed that the sensing units are sensible to aniline vapor with the process being

  1. Thermal shock behavior of platinum aluminide bond coat/electron beam-physical vapor deposited thermal barrier coatings

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhenhua, E-mail: zhxuciac@163.com [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Dai, Jianwei [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Niu, Jing [Shenyang Liming Aero-engine (Group) Corporation Ltd., Institute of Metallurgical Technology, Technical Center, Shengyang 110043 (China); Li, Na; Huang, Guanghong; He, Limin [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China)

    2014-12-25

    Highlights: • TBCs of (Ni, Pt)Al bond coat with grit blasting process and YSZ ceramic coating. • Grain boundary ridges are the sites for spallation damage initiation in TBCs. • Ridges removed, cavities formation appeared and the damage initiation deteriorated. • Damage initiation and progression at interface lead to a buckling failure. - Abstract: Thermal barrier coating systems (TBCs) including of chemical vapor deposited (Ni, Pt)Al bond coat with grit blasting process and electron beam physical vapor deposited Y{sub 2}O{sub 3}-stabilized-ZrO{sub 2} (YSZ) ceramic coating were investigated. The phase structures, surface and cross-sectional morphologies, thermal shock behaviors and residual stresses of the coatings were studied in detail. Grain boundary ridges still remain on the surface of bond coat prior to the deposition of the ceramic coating, which are shown to be the major sites for spallation damage initiation in TBCs. When these ridges are mostly removed, they appear some of cavities formation and then the damage initiation mode is deteriorated. Damage initiation and progression occurs at the bond coat to thermally grown oxide (TGO) interface leading to a buckling failure behavior. A buckle failure once started may be arrested when it runs into a region of high bond coat to TGO interface toughness. Thus, complete failure requires further loss in toughness of the bond coat to TGO interface during cooling. The suppressed cavities formation, the removed ridges at the grain boundaries, the relative high TGO to bond coat interface toughness, the uniform growth behavior of TGO thickening and the lower of the residual stress are the primary factors for prolonging the lifetime of TBCs.

  2. Plasma assisted measurements of alkali metal concentrations in pressurized combustion processes

    Energy Technology Data Exchange (ETDEWEB)

    Hernberg, R.; Haeyrinen, V. [Tampere Univ. of Technology (Finland). Dept. of Physics

    1996-12-01

    The plasma assisted method for continuous measurement of alkali concentrations in product gas flows of pressurized energy processes will be tested and applied at the 1.6 MW PFBC/G facility at Delft University of Technology in the Netherlands. During the reporting period the alkali measuring device has been tested under pressurized conditions at VTT Energy, DMT, Foster-Wheeler Energia and ABB Carbon. Measurements in Delft will be performed during 1996 after installation of the hot gas filter. The original plan for measurements in Delft has been postponed due to schedule delays in Delft. The results are expected to give information about the influence of different process conditions on the generation of alkali vapours, the comparison of different methods for alkali measurement and the specific performance of our system. This will be the first test of the plasma assisted measurement method in a gasification process. The project belongs to the Joule II extension program under contract JOU2-CT93-0431. (author)

  3. Uncertainty propagation in modeling of plasma-assisted hydrogen production from biogas

    Science.gov (United States)

    Zaherisarabi, Shadi; Venkattraman, Ayyaswamy

    2016-10-01

    With the growing concern of global warming and the resulting emphasis on decreasing greenhouse gas emissions, there is an ever-increasing need to utilize energy-production strategies that can decrease the burning of fossil fuels. In this context, hydrogen remains an attractive clean-energy fuel that can be oxidized to produce water as a by-product. In spite of being an abundant species, hydrogen is seldom found in a form that is directly usable for energy-production. While steam reforming of methane is one popular technique for hydrogen production, plasma-assisted conversion of biogas (carbon dioxide + methane) to hydrogen is an attractive alternative. Apart from producing hydrogen, the other advantage of using biogas as raw material is the fact that two potent greenhouse gases are consumed. In this regard, modeling is an important tool to understand and optimize plasma-assisted conversion of biogas. The primary goal of this work is to perform a comprehensive statistical study that quantifies the influence of uncertain rate constants thereby determining the key reaction pathways. A 0-D chemical kinetics solver in the OpenFOAM suite is used to perform a series of simulations to propagate the uncertainty in rate constants and the resulting mean and standard deviation of outcomes.

  4. Investigation of growth, coverage and effectiveness of plasma assisted nano-films of fluorocarbon

    International Nuclear Information System (INIS)

    Joshi, Pratik P.; Pulikollu, Rajasekhar; Higgins, Steven R.; Hu Xiaoming; Mukhopadhyay, S.M.

    2006-01-01

    Plasma-assisted functional films have significant potential in various engineering applications. They can be tailored to impart desired properties by bonding specific molecular groups to the substrate surface. The aim of this investigation was to develop a fundamental understanding of the atomic level growth, coverage and functional effectiveness of plasma nano-films on flat surfaces and to explore their application-potential for complex and uneven shaped nano-materials. In this paper, results on plasma-assisted nano-scale fluorocarbon films, which are known for imparting inertness or hydrophobicity to the surface, will be discussed. The film deposition was studied as a function of time on flat single crystal surfaces of silicon, sapphire and graphite, using microwave plasma. X-ray photoelectron spectroscopy (XPS) was used for detailed study of composition and chemistry of the substrate and coating atoms, at all stages of deposition. Atomic force microscopy (AFM) was performed in parallel to study the coverage and growth morphology of these films at each stage. Combined XPS and AFM results indicated complete coverage of all the substrates at the nanometer scale. It was also shown that these films grew in a layer-by-layer fashion. The nano-films were also applied to complex and uneven shaped nano-structured and porous materials, such as microcellular porous foam and nano fibers. It was seen that these nano-films can be a viable approach for effective surface modification of complex or uneven shaped nano-materials

  5. Highly ionized physical vapor deposition plasma source working at very low pressure

    Czech Academy of Sciences Publication Activity Database

    Straňák, V.; Herrendorf, A.-P.; Drache, S.; Čada, Martin; Hubička, Zdeněk; Tichý, M.; Hippler, R.

    2012-01-01

    Roč. 100, č. 14 (2012), "141604-1"-"141604-3" ISSN 0003-6951 R&D Projects: GA TA ČR TA01010517; GA ČR(CZ) GAP205/11/0386; GA ČR GAP108/12/1941 Institutional research plan: CEZ:AV0Z10100522 Keywords : magnetron * ECWR * low-pressure * sputtering * plasma diagnostics Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 3.794, year: 2012 http://dx.doi.org/10.1063/1.3699229

  6. Growth of magnesium diboride films on 2 inch diameter copper discs by hybrid physical-chemical vapor deposition

    Science.gov (United States)

    Withanage, Wenura K.; Xi, X. X.; Nassiri, Alireza; Lee, Namhoon; Wolak, Matthäus A.; Tan, Teng; Welander, Paul B.; Franzi, Matthew; Tantawi, Sami; Kustom, Robert L.

    2017-04-01

    Magnesium diboride (MgB2) coating is a potential candidate to replace bulk niobium (Nb) for superconducting radio frequency cavities due to the appealing superconducting properties of MgB2. MgB2 coating on copper may allow cavity operation near 20-25 K as a result of the high transition temperature (T c) of MgB2 and excellent thermal conductivity of Cu. We have grown MgB2 films on 2 inch diameter Cu discs by hybrid physical-chemical vapor deposition for radio frequency characterization. Structural and elemental analyses showed a uniform MgB2 coating on top of a Mg-Cu alloy layer with occasional intrusion of Mg-Cu alloy regions. High T c values of around 37 K and high critical current density (J c) on the order of 107 A cm-2 at zero field were observed. Radio frequency measurements at 11.4 GHz confirmed a high T c and showed a quality factor (Q 0) much higher than for Cu and close to that of Nb.

  7. P-channel transparent thin-film transistor using physical-vapor-deposited NiO layer

    Science.gov (United States)

    Lin, Chiung-Wei; Chung, Wei-Chieh; Zhang, Zhao-De; Hsu, Ming-Chih

    2018-01-01

    The effect of oxygen (O) content on the electrical properties of physical-vapor-deposited nickel oxide (PVD-NiO) was studied. When the NiO target was sputtered, introducing O2 can lead to the formation of Ni3+ ions in the deposited film. These Ni3+ ions can act as acceptors. However, there were too many Ni3+ ions that were obtained following the introduction of O atoms. It resulted in intensive p-type conduction and made the O2-introduced PVD-NiO behave as a conductor. Thus, it was possible to reduce the O content of PVD-NiO to obtain a p-type semiconductor. In this study, a transparent PVD-NiO film with a carrier concentration of 1.62 × 1017 cm-3 and a resistivity of 3.74 Ω cm was sputter-deposited within pure argon plasma. The thin-film transistor (TFT) employing this proposed PVD-NiO can result in good current switching, and even operated at very low drain-source voltage. The ON/OFF current ratio, field-effect carrier mobility, and threshold voltage of the proposed NiO TFT were 3.61 × 104, 1.09 cm2 V-1 s-1 and -3.31 V, respectively.

  8. Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings

    Directory of Open Access Journals (Sweden)

    Januś M.

    2015-06-01

    Full Text Available Plasma Assisted Chemical Vapour Deposition (PA CVD method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy and improving of the wear resistance (in the case of PEEK substrate.

  9. Investigation of flame structure in plasma-assisted turbulent premixed methane-air flame

    Science.gov (United States)

    Hualei, ZHANG; Liming, HE; Jinlu, YU; Wentao, QI; Gaocheng, CHEN

    2018-02-01

    The mechanism of plasma-assisted combustion at increasing discharge voltage is investigated in detail at two distinctive system schemes (pretreatment of reactants and direct in situ discharge). OH-planar laser-induced fluorescence (PLIF) technique is used to diagnose the turbulent structure methane-air flame, and the experimental apparatus consists of dump burner, plasma-generating system, gas supply system and OH-PLIF system. Results have shown that the effect of pretreatment of reactants on flame can be categorized into three regimes: regime I for voltage lower than 6.6 kV; regime II for voltage between 6.6 and 11.1 kV; and regime III for voltage between 11.1 and 12.5 kV. In regime I, aerodynamic effect and slower oxidation of higher hydrocarbons generated around the inner electrode tip plays a dominate role, while in regime III, the temperature rising effect will probably superimpose on the chemical effect and amplify it. For wire-cylinder dielectric barrier discharge reactor with spatially uneven electric field, the amount of radicals and hydrocarbons are decreased monotonically in radial direction which affects the flame shape. With regard to in situ plasma discharge in flames, the discharge pattern changes from streamer type to glow type. Compared with the case of reactants pretreatment, the flame propagates further in the upstream direction. In the discharge region, the OH intensity is highest for in situ plasma assisted combustion, indicating that the plasma energy is coupled into flame reaction zone.

  10. Evaporation temperature-tuned physical vapor deposition growth engineering of one-dimensional non-Fermi liquid tetrathiofulvalene tetracyanoquinodimethane thin films

    DEFF Research Database (Denmark)

    Sarkar, I.; Laux, M.; Demokritova, J.

    2010-01-01

    We describe the growth of high quality tetrathiofulvalene tetracyanoquinodimethane (TTF-TCNQ) organic charge-transfer thin films which show a clear non-Fermi liquid behavior. Temperature dependent angle resolved photoemission spectroscopy and electronic structure calculations show that the growth...... of TTF-TCNQ films is accompanied by the unfavorable presence of neutral TTF and TCNQ molecules. The quality of the films can be controlled by tuning the evaporation temperature of the precursor in physical vapor deposition method....

  11. Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

    NARCIS (Netherlands)

    Profijt, H. B.; M. C. M. van de Sanden,; Kessele, W. M. M.

    2013-01-01

    Two substrate-biasing techniques, i.e., substrate-tuned biasing and RF biasing, have been implemented in a remote plasma configuration, enabling control of the ion energy during plasma-assisted atomic layer deposition (ALD). With both techniques, substrate bias voltages up to -200 V have been

  12. Investigating the Plasma-Assisted and Thermal Catalytic Dry Methane Reforming for Syngas Production: Process Design, Simulation and Evaluation

    Directory of Open Access Journals (Sweden)

    Evangelos Delikonstantis

    2017-09-01

    Full Text Available The growing surplus of green electricity generated by renewable energy technologies has fueled research towards chemical industry electrification. By adapting power-to-chemical concepts, such as plasma-assisted processes, cheap resources could be converted into fuels and base chemicals. However, the feasibility of those electrified processes at large scale has not been investigated yet. Thus, the current work strives to compare, for first time in the literature, plasma-assisted production of syngas, from CH4 and CO2 (dry methane reforming, with thermal catalytic dry methane reforming. Specifically, both processes are conceptually designed to deliver syngas suitable for methanol synthesis (H2/CO ≥ 2 in mole. The processes are simulated in the Aspen Plus process simulator where different process steps are investigated. Heat integration and equipment cost estimation are performed for the most promising process flow diagrams. Collectively, plasma-assisted dry methane reforming integrated with combined steam/CO2 methane reforming is an effective way to deliver syngas for methanol production. It is more sustainable than combined thermal catalytic dry methane reforming with steam methane reforming, which has also been proposed for syngas production of H2/CO ≥ 2; in the former process, 40% more CO2 is captured, while 38% less H2O is consumed per mol of syngas. Furthermore, the plasma-assisted process is less complex than the thermal catalytic one; it requires higher amount of utilities, but comparable capital investment.

  13. Plasma-assisted synthesis of monodispersed and robust Ruthenium ultrafine nanocatalysts for organosilane oxidation and oxygen evolution reactions

    NARCIS (Netherlands)

    Gnanakumar, E.S.; Ng, W.; Filiz, B.C.; Rothenberg, G.; Wang, S.; Xu, H.; Pastor-Pérez, L.; Pastor-Blas, M.M.; Sepúlveda-Escribano, A.; Yan, N.; Shiju, N.R.

    2017-01-01

    We report a facile and general approach for preparing ultrafine ruthenium nanocatalysts by using a plasma-assisted synthesis at <100 °C. The resulting Ru nanoparticles are monodispersed (typical size 2 nm) and remain that way upon loading onto carbon and TiO2 supports. This gives robust catalysts

  14. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Elliot, Alan J., E-mail: alane@ku.edu, E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z., E-mail: alane@ku.edu, E-mail: jwu@ku.edu [Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States); Yu, Haifeng; Zhao, Shiping [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-07-15

    Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

  15. Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Skierbiszewski, C.; Wasilewski, Z.R.; Siekacz, M.; Feduniewicz, A.; Perlin, P.; Wisniewski, P.; Borysiuk, J.; Grzegory, I.; Leszczynski, M.; Suski, T.; Porowski, S.

    2005-01-01

    We report on the InGaN multiquantum laser diodes (LDs) made by rf plasma-assisted molecular beam epitaxy (PAMBE). The laser operation at 408 nm is demonstrated at room temperature with pulsed current injections using 50 ns pulses at 0.25% duty cycle. The threshold current density and voltage for the LDs with cleaved uncoated mirrors are 12 kA/cm 2 (900 mA) and 9 V, respectively. High output power of 0.83 W is obtained during pulse operation at 3.6 A and 9.6 V bias with the slope efficiency of 0.35 W/A. The laser structures are deposited on the high-pressure-grown low dislocation bulk GaN substrates taking full advantage of the adlayer enhanced lateral diffusion channel for adatoms below the dynamic metallic cover. Our devices compare very favorably to the early laser diodes fabricated using the metalorganic vapor phase epitaxy technique, providing evidence that the relatively low growth temperatures used in this process pose no intrinsic limitations on the quality of the blue optoelectronic components that can be fabricated using PAMBE

  16. Plasma and process characterization of high power magnetron physical vapor deposition with integrated plasma equipment--feature profile model

    International Nuclear Information System (INIS)

    Zhang Da; Stout, Phillip J.; Ventzek, Peter L.G.

    2003-01-01

    High power magnetron physical vapor deposition (HPM-PVD) has recently emerged for metal deposition into deep submicron features in state of the art integrated circuit fabrication. However, the plasma characteristics and process mechanism are not well known. An integrated plasma equipment-feature profile modeling infrastructure has therefore been developed for HPM-PVD deposition, and it has been applied to simulating copper seed deposition with an Ar background gas for damascene metalization. The equipment scale model is based on the hybrid plasma equipment model [M. Grapperhaus et al., J. Appl. Phys. 83, 35 (1998); J. Lu and M. J. Kushner, ibid., 89, 878 (2001)], which couples a three-dimensional Monte Carlo sputtering module within a two-dimensional fluid model. The plasma kinetics of thermalized, athermal, and ionized metals and the contributions of these species in feature deposition are resolved. A Monte Carlo technique is used to derive the angular distribution of athermal metals. Simulations show that in typical HPM-PVD processing, Ar + is the dominant ionized species driving sputtering. Athermal metal neutrals are the dominant deposition precursors due to the operation at high target power and low pressure. The angular distribution of athermals is off axis and more focused than thermal neutrals. The athermal characteristics favor sufficient and uniform deposition on the sidewall of the feature, which is the critical area in small feature filling. In addition, athermals lead to a thick bottom coverage. An appreciable fraction (∼10%) of the metals incident to the wafer are ionized. The ionized metals also contribute to bottom deposition in the absence of sputtering. We have studied the impact of process and equipment parameters on HPM-PVD. Simulations show that target power impacts both plasma ionization and target sputtering. The Ar + ion density increases nearly linearly with target power, different from the behavior of typical ionized PVD processing. The

  17. Ion-induced crystal damage during plasma-assisted MBE growth of GaN layers

    Science.gov (United States)

    Kirchner, V.; Heinke, H.; Birkle, U.; Einfeldt, S.; Hommel, D.; Selke, H.; Ryder, P. L.

    1998-12-01

    Gallium nitride layers were grown by plasma-assisted molecular-beam epitaxy on (0001)-oriented sapphire substrates using an electron cyclotron resonance (ECR) and a radio frequency (rf) plasma source. An applied substrate bias was varied from -200 to +250 V, resulting in a change of the density and energy of nitrogen ions impinging the growth surface. The layers were investigated by high-resolution x-ray diffractometry and high-resolution transmission electron microscopy (HRTEM). Applying a negative bias during growth has a marked detrimental effect on the crystal perfection of the layers grown with an ECR plasma source. This is indicated by a change in shape and width of (0002) and (202¯5) reciprocal lattice points as monitored by triple axis x-ray measurements. In HRTEM images, isolated basal plane stacking faults were found, which probably result from precipitation of interstitial atoms. The crystal damage in layers grown with a highly negative substrate bias is comparable to that observed for ion implantation processes at orders of magnitude larger ion energies. This is attributed to the impact of ions on the growing surface. None of the described phenomena was observed for the samples grown with the rf plasma source.

  18. One-dimensional analysis of the rate of plasma-assisted sputter deposition

    International Nuclear Information System (INIS)

    Palmero, A.; Rudolph, H.; Habraken, F. H. P. M.

    2007-01-01

    In this article a recently developed model [A. Palmero, H. Rudolph, and F. H. P. M. Habraken, Appl. Phys. Lett. 89, 211501 (2006)] is applied to analyze the transport of sputtered material from the cathode toward the growing film when using a plasma-assisted sputtering deposition technique. The argon pressure dependence of the deposition rate of aluminum, silicon, vanadium, chromium, germanium, tantalum, and tungsten under several different experimental conditions has been analyzed by fitting experimental results from the literature to the above-mentioned theory. Good fits are obtained. Three quantities are deduced from the fit: the temperature of the cathode and of the growing film, and the value of the effective cross section for thermalization due to elastic scattering of a sputtered particle on background gas atoms. The values derived from the fits for the growing film and cathode temperature are very similar to those experimentally determined and reported in the literature. The effective cross sections have been found to be approximately the corresponding geometrical cross section divided by the average number of collisions required for the thermalization, implying that the real and effective thermalization lengths have a similar value. Finally, the values of the throw distance appearing in the Keller-Simmons model, as well as its dependence on the deposition conditions have been understood invoking the values of the cathode and film temperature, as well as of the value of the effective cross section. The analysis shows the overall validity of this model for the transport of sputtered particles in sputter deposition

  19. Plasma-assisted CO2 conversion: optimizing performance via microwave power modulation

    Science.gov (United States)

    Britun, Nikolay; Silva, Tiago; Chen, Guoxing; Godfroid, Thomas; van der Mullen, Joost; Snyders, Rony

    2018-04-01

    Significant improvement in the energy efficiency of plasma-assisted CO2 conversion is achieved with applied power modulation in a surfaguide microwave discharge. The obtained values of CO2 conversion and energy efficiency are, respectively, 0.23 and 0.33 for a 0.95 CO2  +  0.05 N2 gas mixture. Analysis of the energy relaxation mechanisms shows that power modulation can potentially affect the vibrational-translational energy exchange in plasma. In our case, however, this mechanism does not play a major role, likely due to the low degree of plasma non-equilibrium in the considered pressure range. Instead, the gas residence time in the discharge active zone together with plasma pulse duration are found to be the main factors affecting the CO2 conversion efficiency at low plasma pulse repetition rates. This effect is confirmed experimentally by the in situ time-resolved two-photon absorption laser-induced fluorescence measurements of CO molecular density produced in the discharge as a result of CO2 decomposition.

  20. Effect of actuating voltage and discharge gap on plasma assisted detonation initiation process

    Science.gov (United States)

    Siyin, ZHOU; Xueke, CHE; Wansheng, NIE; Di, WANG

    2018-06-01

    The influence of actuating voltage and discharge gap on plasma assisted detonation initiation by alternating current dielectric barrier discharge was studied in detail. A loose coupling method was used to simulate the detonation initiation process of a hydrogen–oxygen mixture in a detonation tube under different actuating voltage amplitudes and discharge gap sizes. Both the discharge products and the detonation forming process assisted by the plasma were analyzed. It was found that the patterns of the temporal and spatial distributions of discharge products in one cycle keep unchanged as changing the two discharge operating parameters. However, the adoption of a higher actuating voltage leads to a higher active species concentration within the discharge zone, and atom H is the most sensitive to the variations of the actuating voltage amplitude among the given species. Adopting a larger discharge gap results in a lower concentration of the active species, and all species have the same sensitivity to the variations of the gap. With respect to the reaction flow of the detonation tube, the corresponding deflagration to detonation transition (DDT) time and distance become slightly longer when a higher actuating voltage is chosen. The acceleration effect of plasma is more prominent with a smaller discharge gap, and the benefit builds gradually throughout the DDT process. Generally, these two control parameters have little effect on the amplitude of the flow field parameters, and they do not alter the combustion degree within the reaction zone.

  1. Plasma assisted nitriding for micro-texturing onto martensitic stainless steels*

    Directory of Open Access Journals (Sweden)

    Katoh Takahisa

    2015-01-01

    Full Text Available Micro-texturing method has grown up to be one of the most promising procedures to form micro-lines, micro-dots and micro-grooves onto the mold-die materials and to duplicate these micro-patterns onto metallic or polymer sheets via stamping or injection molding. This related application requires for large-area, fine micro-texturing onto the martensitic stainless steel mold-die materials. A new method other than laser-machining, micro-milling or micro-EDM is awaited for further advancement of this micro-texturing. In the present paper, a new micro-texturing method is developed on the basis of the plasma assisted nitriding to transform the two-dimensionally designed micro-patterns to the three dimensional micro-textures in the martensitic stainless steels. First, original patterns are printed onto the surface of stainless steel molds by using the dispenser or the ink-jet printer. Then, the masked mold is subjected to high density plasma nitriding; the un-masked surfaces are nitrided to have higher hardness, 1400 Hv than the matrix hardness, 200 Hv of stainless steels. This nitrided mold is further treated by sand-blasting to selectively remove the soft, masked surfaces. Finally, the micro-patterned martensitic stainless steel mold is fabricated as a tool to duplicate these micro-patterns onto the plastic materials by the injection molding.

  2. Plasma-assisted co-evaporation of {beta}-indium sulfide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kosaraju, Sreenivas; Marino, Joseph A.; Harvey, John A.; Wolden, Colin A. [Department of Chemical Engineering, Colorado School of Mines, Golden, CO 80401 (United States)

    2006-05-05

    This paper describes the development of plasma-assisted co-evaporation (PACE) for the formation of {beta}-In{sub 2}S{sub 3} thin films. Indium was supplied by conventional thermal evaporation, while the chalcogen gas precursor (H{sub 2}S) was activated using an inductively coupled plasma (ICP) source. Using a combination of optical emission spectroscopy and mass spectrometry it was shown that the ICP effectively dissociated H{sub 2}S, producing atomic sulfur. Transport modeling was used to quantify the flux distributions of the co-evaporated metal and the plasma-generated species impinging the substrate. Model predictions were validated by measurements of deposition rate and film properties. Substantial improvements in both materials utilization and substrate temperature reduction were realized with respect to conventional co-evaporation. {beta}-In{sub 2}S{sub 3} was formed as low as 100{sup o}C and it was observed that quality was a strong function of S/In ratio. The grain size decreased and the optical band gap increased as the substrate temperature was reduced. (author)

  3. Plasma-assisted deposition of microcapsule containing Aloe vera extract for cosmeto-textiles

    Science.gov (United States)

    Nascimento do Carmo, S.; Zille, A.; Souto, A. P.

    2017-10-01

    Dielectric Barrier Discharge (DBD) atmospheric-pressure plasma was employed to enhance the deposition of commercial microcapsules (MCs) containing Aloe vera extract onto a cotton/polyester (50:50) fabric. DBD conditions were optimized in term of energy dosage and contact angle. The MCs were applied by padding and printing methods and the coatings were characterized in terms of SEM and FTIR. MCs display a spherical shape with size between 2 and 8 μm with an average wall thickness of 0.5 μm. The MCs applied by printing and pretreated with a plasma dosage of 1.6 kW m2 min-1 showed the best results with an increased adhesion of 200% and significant penetration of MCs into the fibres network. Plasma printed fabric retained 230% more MCs than untreated fabric after 10 washing cycles. However, the coating resistance between unwashed and washed samples was only improved by 5%. Considering the fact that no binder or crosslinking agents were used, the DBD plasma-assisted deposition of MCs revealed to be a promising environmental safe and low cost coating technology.

  4. Plasma-assisted heterogeneous catalysis for NOx reduction in lean-burn engine exhaust

    Energy Technology Data Exchange (ETDEWEB)

    Penetrante, B.M.; Hsaio, M.C.; Merritt, B.T.; Vogtlin, G.E. [Lawrence Livermore National Lab., CA (United States); Wan, C.Z.; Rice, G.W.; Voss, K.E. [Engelhard Corp., Iselin, NJ (United States)

    1997-12-31

    This paper discusses the combination of a plasma with a catalyst to improve the reduction of NO{sub x} under lean-burn conditions. The authors have been investigating the effects of a plasma on the NO{sub x} reduction activity and temperature operating window of various catalytic materials. One of the goals is to develop a fundamental understanding of the interaction between the gas-phase plasma chemistry and the heterogeneous chemistry on the catalyst surface. The authors have observed that plasma assisted heterogeneous catalysis can facilitate NO{sub x} reduction under conditions that normally make it difficult for either the plasma or the catalyst to function by itself. By systematically varying the plasma electrode and catalyst configuration, they have been able to elucidate the process by which the plasma chemistry affects the chemical reduction of NO{sub x} on the catalyst surface. They have discovered that the main effect of the plasma is to induce the gas-phase oxidation of NO to NO{sub 21}. The reduction of NO{sub x} to N{sub 2} is then accomplished by heterogeneous reaction of O with activated hydrocarbons on the catalyst surface. The use of a plasma opens the opportunity for a new class of catalysts that are potentially more durable, more active, more selective and more sulfur-tolerant compared to conventional lean-NO{sub x} catalysts.

  5. Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO2.

    Science.gov (United States)

    Gasvoda, Ryan J; van de Steeg, Alex W; Bhowmick, Ranadeep; Hudson, Eric A; Agarwal, Sumit

    2017-09-13

    Surface phenomena during atomic layer etching (ALE) of SiO 2 were studied during sequential half-cycles of plasma-assisted fluorocarbon (CF x ) film deposition and Ar plasma activation of the CF x film using in situ surface infrared spectroscopy and ellipsometry. Infrared spectra of the surface after the CF x deposition half-cycle from a C 4 F 8 /Ar plasma show that an atomically thin mixing layer is formed between the deposited CF x layer and the underlying SiO 2 film. Etching during the Ar plasma cycle is activated by Ar + bombardment of the CF x layer, which results in the simultaneous removal of surface CF x and the underlying SiO 2 film. The interfacial mixing layer in ALE is atomically thin due to the low ion energy during CF x deposition, which combined with an ultrathin CF x layer ensures an etch rate of a few monolayers per cycle. In situ ellipsometry shows that for a ∼4 Å thick CF x film, ∼3-4 Å of SiO 2 was etched per cycle. However, during the Ar plasma half-cycle, etching proceeds beyond complete removal of the surface CF x layer as F-containing radicals are slowly released into the plasma from the reactor walls. Buildup of CF x on reactor walls leads to a gradual increase in the etch per cycle.

  6. Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3

    International Nuclear Information System (INIS)

    Hinkle, Chris; Lucovsky, Gerry

    2003-01-01

    Remote plasma-assisted nitridation or RPN is demonstrated to be a processing pathway for nitridation of Zr and Hf silicate alloys, and for Al 2 O 3 , as well. The dependence of nitrogen incorporation on the process pressure is qualitatively similar to what has been reported for the plasma-assisted nitridation of SiO 2 , the lower the process pressure the greater the nitrogen incorporation in the film. The increased incorporation of nitrogen has been correlated with the penetration of the plasma-glow into the process chamber, and the accompanying increase in the concentration of N 2 + ions that participate in the reactions leading to bulk incorporation. The nitrogen incorporation as been studied by Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and X-ray absorption spectroscopy (XAS)

  7. Microspectroscopic imaging of solution plasma: How do its physical properties and chemical species evolve in atmospheric-pressure water vapor bubbles?

    Science.gov (United States)

    Yui, Hiroharu; Banno, Motohiro

    2018-01-01

    In this article, we review the development of scientific instruments for obtaining information on the evolution of physical properties and chemical species of solution plasma (SP). When a pulsed high voltage is applied between electrodes immersed in an aqueous solution, SP is formed in water vapor bubbles transiently generated in the solution under atmospheric pressure. To clarify how SP emerges in water vapor bubbles and is sustained in solutions, an instrument with micrometer spatial resolution and nanosecond temporal resolution is required. To meet these requirements, a microscopic system with a custom-made optical discharge cell was newly developed, where the working distance between the SP and the microscopic objective lens was minimized. A hollow electrode equipped in the discharge cell also enabled us to control the chemical composition in water vapor bubbles. To study the spatial and temporal evolutions of chemical species in micrometer and nano- to microsecond regions, a streak camera with a spectrometer and a CCD detector with a time-gated electronic device were combined with the microscope system. The developed instrument is expected to contribute to providing a new means of developing new schemes for chemical reactions and material syntheses.

  8. Plasma-assisted ALD for the conformal deposition of SiO2 : process, material and electronic properties

    NARCIS (Netherlands)

    Dingemans, G.; Helvoirt, van C.A.A.; Pierreux, D.; Keuning, W.; Kessels, W.M.M.

    2012-01-01

    Plasma-assisted atomic layer deposition (ALD) was used to deposit SiO2 films in the temperature range of Tdep = 50–400°C on Si(100). H2Si[N(C2H5)2]2 and an O2 plasma were used as Si precursor and oxidant, respectively. The ALD growth process and material properties were characterized in detail.

  9. Plasma-Assisted ALD TiN/Al2O3 stacks for MIMIM Trench Capacitor Applications

    NARCIS (Netherlands)

    Hoogeland, D.; Jinesh, K.B.; Voogt, F.C.; Besling, W.F.A.; Lamy, Y.; Roozeboom, F.; Sanden, van de M.C.M.; Kessels, W.M.M.; Gendt, de S.

    2009-01-01

    In this paper we report on the overall plasma-assisted ALD processes of Al2O3 and TiN conducted in a single reactor chamber and at a single temperature (340 oC). The individual Al2O3 and TiN films in the stack were consecutively deposited in such a way that they were separated by purge intervals

  10. Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy

    NARCIS (Netherlands)

    Langereis, E.; Keijmel, J.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2008-01-01

    The surface groups created during plasma-assisted atomic layer deposition (ALD) of Al2O3 were studied by infrared spectroscopy. For temperatures in the range of 25–150 °C, –CH3 and –OH were unveiled as dominant surface groups after the Al(CH3)3precursor and O2 plasma half-cycles, respectively. At

  11. A parametric study of the microwave plasma-assisted combustion of premixed ethylene/air mixtures

    Science.gov (United States)

    Fuh, Che A.; Wu, Wei; Wang, Chuji

    2017-11-01

    A parametric study of microwave argon plasma assisted combustion (PAC) of premixed ethylene/air mixtures was carried out using visual imaging, optical emission spectroscopy and cavity ringdown spectroscopy as diagnostic tools. The parameters investigated included the plasma feed gas flow rate, the plasma power, the fuel equivalence ratio and the total flow rate of the fuel/air mixture. The combustion enhancement effects were characterized by the minimum ignition power, the flame length and the fuel efficiency of the combustor. It was found that: (1) increasing the plasma feed gas flow rate resulted in a decrease in the flame length, an increase in the minimum ignition power for near stoichiometric fuel equivalence ratios and a corresponding decrease in the minimum ignition power for ultra-lean and rich fuel equivalence ratios; (2) at a constant plasma power, increasing the total flow rate of the ethylene/air mixture from 1.0 slm to 1.5 slm resulted in an increase in the flame length and a reduction in the fuel efficiency; (3) increasing the plasma power resulted in a slight increase in flame length as well as improved fuel efficiency with fewer C2(d) and CH(A) radicals present downstream of the flame; (4) increasing the fuel equivalence ratio caused an increase in flame length but at a reduced fuel efficiency when plasma power was kept constant; and (5) the ground state OH(X) number density was on the order of 1015 molecules/cm3 and was observed to drop downstream along the propagation axis of the flame at all parameters investigated. Results suggest that each of the parameters independently influences the PAC processes.

  12. Plasma-Assisted Synthesis of NiCoP for Efficient Overall Water Splitting

    KAUST Repository

    Liang, Hanfeng

    2016-11-09

    Efficient water splitting requires highly active, earth-abundant, and robust catalysts. Monometallic phosphides such as NiP have been shown to be active toward water splitting. Our theoretical analysis has suggested that their performance can be further enhanced by substitution with extrinsic metals, though very little work has been conducted in this area. Here we present for the first time a novel PH plasma-assisted approach to convert NiCo hydroxides into ternary NiCoP. The obtained NiCoP nanostructure supported on Ni foam shows superior catalytic activity toward the hydrogen evolution reaction (HER) with a low overpotential of 32 mV at 10 mA cm in alkaline media. Moreover, it is also capable of catalyzing the oxygen evolution reaction (OER) with high efficiency though the real active sites are surface oxides in situ formed during the catalysis. Specifically, a current density of 10 mA cm is achieved at overpotential of 280 mV. These overpotentials are among the best reported values for non-noble metal catalysts. Most importantly, when used as both the cathode and anode for overall water splitting, a current density of 10 mA cm is achieved at a cell voltage as low as 1.58 V, making NiCoP among the most efficient earth-abundant catalysts for water splitting. Moreover, our new synthetic approach can serve as a versatile route to synthesize various bimetallic or even more complex phosphides for various applications.

  13. Comparative Shock-Tube Study of Autoignition and Plasma-Assisted Ignition of C2-Hydrocarbons

    Science.gov (United States)

    Kosarev, Ilya; Kindysheva, Svetlana; Plastinin, Eugeny; Aleksandrov, Nikolay; Starikovskiy, Andrey

    2015-09-01

    The dynamics of pulsed picosecond and nanosecond discharge development in liquid water, ethanol and hexane Using a shock tube with a discharge cell, ignition delay time was measured in a lean (φ = 0.5) C2H6:O2:Ar mixture and in lean (φ = 0.5) and stoichiometric C2H4:O2:Ar mixtures with a high-voltage nanosecond discharge and without it. The measured results were compared with the measurements made previously with the same setup for C2H6-, C2H5OH- and C2H2-containing mixtures. It was shown that the effect of plasma on ignition is almost the same for C2H6, C2H4 and C2H5OH. The reduction in time is smaller for C2H2, the fuel that is well ignited even without the discharge. Autoignition delay time was independent of the stoichiometric ratio for C2H6 and C2H4, whereas this time in stoichiometric C2H2- and C2H5OH-containing mixtures was noticeably shorter than that in the lean mixtures. Ignition after the discharge was not affected by a change in the stoichiometric ratio for C2H2 and C2H4, whereas the plasma-assisted ignition delay time for C2H6 and C2H5OH decreased as the equivalence ratio changed from 1 to 0.5. Ignition delay time was calculated in C2-hydrocarbon-containing mixtures under study by simulating separately discharge and ignition processes. Good agreement was obtained between new measurements and calculated ignition delay times.

  14. Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD).

    Science.gov (United States)

    Böke, Frederik; Giner, Ignacio; Keller, Adrian; Grundmeier, Guido; Fischer, Horst

    2016-07-20

    Densely sintered aluminum oxide (α-Al2O3) is chemically and biologically inert. To improve the interaction with biomolecules and cells, its surface has to be modified prior to use in biomedical applications. In this study, we compared two deposition techniques for adhesion promoting SiOx films to facilitate the coupling of stable organosilane monolayers on monolithic α-alumina; physical vapor deposition (PVD) by thermal evaporation and plasma enhanced chemical vapor deposition (PE-CVD). We also investigated the influence of etching on the formation of silanol surface groups using hydrogen peroxide and sulfuric acid solutions. The film characteristics, that is, surface morphology and surface chemistry, as well as the film stability and its adhesion properties under accelerated aging conditions were characterized by means of X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), inductively coupled plasma-optical emission spectroscopy (ICP-OES), and tensile strength tests. Differences in surface functionalization were investigated via two model organosilanes as well as the cell-cytotoxicity and viability on murine fibroblasts and human mesenchymal stromal cells (hMSC). We found that both SiOx interfaces did not affect the cell viability of both cell types. No significant differences between both films with regard to their interfacial tensile strength were detected, although failure mode analyses revealed a higher interfacial stability of the PE-CVD films compared to the PVD films. Twenty-eight day exposure to simulated body fluid (SBF) at 37 °C revealed a partial delamination of the thermally deposited PVD films whereas the PE-CVD films stayed largely intact. SiOx layers deposited by both PVD and PE-CVD may thus serve as viable adhesion-promoters for subsequent organosilane coupling agent binding to α-alumina. However, PE-CVD appears to be favorable for long-term direct film exposure to aqueous

  15. Temperature measurement of plasma-assisted flames: comparison between optical emission spectroscopy and 2-color laser induced fluorescence techniques

    KAUST Repository

    Lacoste, Deanna A.

    2015-03-30

    Accurate thermometry of highly reactive environments, such as plasma-assisted combustion, is challenging. With the help of conical laminar premixed methane-air flames, this study compares two thermometry techniques for the temperature determination in a combustion front enhanced by nanosecond repetitively pulsed (NRP) plasma discharges. Based on emission spectroscopic analysis, the results show that the rotational temperature of CH(A) gives a reasonable estimate for the adiabatic flame temperature, only for lean and stoichiometric conditions. The rotational temperature of N2(C) is found to significantly underestimate the flame temperature. The 2-color OH-PLIF technique gives correct values of the flame temperature.

  16. Temperature measurement of plasma-assisted flames: comparison between optical emission spectroscopy and 2-color laser induced fluorescence techniques

    KAUST Repository

    Lacoste, Deanna A.; Heitz, Sylvain A.; Moeck, Jonas P.

    2015-01-01

    Accurate thermometry of highly reactive environments, such as plasma-assisted combustion, is challenging. With the help of conical laminar premixed methane-air flames, this study compares two thermometry techniques for the temperature determination in a combustion front enhanced by nanosecond repetitively pulsed (NRP) plasma discharges. Based on emission spectroscopic analysis, the results show that the rotational temperature of CH(A) gives a reasonable estimate for the adiabatic flame temperature, only for lean and stoichiometric conditions. The rotational temperature of N2(C) is found to significantly underestimate the flame temperature. The 2-color OH-PLIF technique gives correct values of the flame temperature.

  17. High throughput production of nanocomposite SiO x powders by plasma spray physical vapor deposition for negative electrode of lithium ion batteries

    Directory of Open Access Journals (Sweden)

    Keiichiro Homma

    2014-04-01

    Full Text Available Nanocomposite Si/SiO x powders were produced by plasma spray physical vapor deposition (PS-PVD at a material throughput of 480 g h−1. The powders are fundamentally an aggregate of primary ~20 nm particles, which are composed of a crystalline Si core and SiO x shell structure. This is made possible by complete evaporation of raw SiO powders and subsequent rapid condensation of high temperature SiO x vapors, followed by disproportionation reaction of nucleated SiO x nanoparticles. When CH4 was additionally introduced to the PS-PVD, the volume of the core Si increases while reducing potentially the SiO x shell thickness as a result of the enhanced SiO reduction, although an unfavorable SiC phase emerges when the C/Si molar ratio is greater than 1. As a result of the increased amount of Si active material and reduced source for irreversible capacity, half-cell batteries made of PS-PVD powders with C/Si = 0.25 have exhibited improved initial efficiency and maintenance of capacity as high as 1000 mAh g−1 after 100 cycles at the same time.

  18. Deposition of MgB2 Thin Films on Alumina-Buffered Si Substrates by using Hybrid Physical-Chemical Vapor Deposition Method

    International Nuclear Information System (INIS)

    Lee, T. G.; Park, S. W.; Seong, W. K.; Huh, J. Y.; Jung, S. G.; Kang, W. N.; Lee, B. K.; An, K. S.

    2008-01-01

    [ MgB 2 ] thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures 500 - 600 degrees C and under the reactor pressures of 25 - 50 degrees C. There are some interfacial reactions in the as-grown films with impurities of mostly Mg 2 Si, MgAl 2 O 4 , and other phases. The T c 's of MgB 2 films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly Mg 2 Si impurity in HPCVD process is discussed, considering the diffusion and reaction of Mg vapor with silicon substrates.

  19. Evaporation of Droplets in Plasma Spray-Physical Vapor Deposition Based on Energy Compensation Between Self-Cooling and Plasma Heat Transfer

    Science.gov (United States)

    Liu, Mei-Jun; Zhang, Meng; Zhang, Qiang; Yang, Guan-Jun; Li, Cheng-Xin; Li, Chang-Jiu

    2017-10-01

    In the plasma spray-physical vapor deposition process (PS-PVD), there is no obvious heating to the feedstock powders due to the free molecular flow condition of the open plasma jet. However, this is in contrast to recent experiments in which the molten droplets are transformed into vapor atoms in the open plasma jet. In this work, to better understand the heating process of feedstock powders in the open plasma jet of PS-PVD, an evaporation model of molten ZrO2 is established by examining the heat and mass transfer process of molten ZrO2. The results reveal that the heat flux in PS-PVD open plasma jet (about 106 W/m2) is smaller than that in the plasma torch nozzle (about 108 W/m2). However, the flying distance of molten ZrO2 in the open plasma jet is much longer than that in the plasma torch nozzle, so the heating in the open plasma jet cannot be ignored. The results of the evaporation model show that the molten ZrO2 can be partly evaporated by self-cooling, whereas the molten ZrO2 with a diameter <0.28 μm and an initial temperature of 3247 K can be completely evaporated within the axial distance of 450 mm by heat transfer.

  20. Instantaneous formation of SiOx nanocomposite for high capacity lithium ion batteries by enhanced disproportionation reaction during plasma spray physical vapor deposition.

    Science.gov (United States)

    Tashiro, Tohru; Dougakiuchi, Masashi; Kambara, Makoto

    2016-01-01

    Nanocomposite SiO x particles have been produced by a single step plasma spray physical vapor deposition (PS-PVD) through rapid condensation of SiO vapors and the subsequent disproportionation reaction. Core-shell nanoparticles, in which 15 nm crystalline Si is embedded within the amorphous SiO x matrix, form under typical PS-PVD conditions, while 10 nm amorphous particles are formed when processed with an increased degree of non-equilibrium effect. Addition of CH 4 promotes reduction in the oxygen content x of SiO x , and thereby increases the Si volume in a nanocomposite particle. As a result, core-shell nanoparticles with x  = 0.46 as anode exhibit increased initial efficiency and the capacity of lithium ion batteries while maintaining cyclability. Furthermore, it is revealed that the disproportionation reaction of SiO is promoted in nanosized particles attaining increased Si diffusivity by two orders of magnitude compared to that in bulk, which facilitates instantaneous composite nanoparticle formation during PS-PVD.

  1. High throughput production of nanocomposite SiO x powders by plasma spray physical vapor deposition for negative electrode of lithium ion batteries.

    Science.gov (United States)

    Homma, Keiichiro; Kambara, Makoto; Yoshida, Toyonobu

    2014-04-01

    Nanocomposite Si/SiO x powders were produced by plasma spray physical vapor deposition (PS-PVD) at a material throughput of 480 g h -1 . The powders are fundamentally an aggregate of primary ∼20 nm particles, which are composed of a crystalline Si core and SiO x shell structure. This is made possible by complete evaporation of raw SiO powders and subsequent rapid condensation of high temperature SiO x vapors, followed by disproportionation reaction of nucleated SiO x nanoparticles. When CH 4 was additionally introduced to the PS-PVD, the volume of the core Si increases while reducing potentially the SiO x shell thickness as a result of the enhanced SiO reduction, although an unfavorable SiC phase emerges when the C/Si molar ratio is greater than 1. As a result of the increased amount of Si active material and reduced source for irreversible capacity, half-cell batteries made of PS-PVD powders with C/Si = 0.25 have exhibited improved initial efficiency and maintenance of capacity as high as 1000 mAh g -1 after 100 cycles at the same time.

  2. Improved cyclic oxidation resistance of electron beam physical vapor deposited nano-oxide dispersed {beta}-NiAl coatings for Hf-containing superalloy

    Energy Technology Data Exchange (ETDEWEB)

    Guo Hongbo [School of Materials Science and Engineering, Beihang University, No. 37, Xueyuan Road, Beijing 100191 (China); Beijing Key Laboratory for Advanced Functional Materials and Thin Film Technology, Beihang University, No. 37, Xueyuan Road, Beijing 100191 (China)], E-mail: Guo.hongbo@buaa.edu.cn; Cui Yongjing; Peng Hui; Gong Shengkai [School of Materials Science and Engineering, Beihang University, No. 37, Xueyuan Road, Beijing 100191 (China); Beijing Key Laboratory for Advanced Functional Materials and Thin Film Technology, Beihang University, No. 37, Xueyuan Road, Beijing 100191 (China)

    2010-04-15

    Oxide dispersed (OD) {beta}-NiAl coatings and OD-free {beta}-NiAl coatings were deposited onto a Hf-containing Ni-based superalloy by electron beam physical vapor deposition (EB-PVD). Excessive enrichment of Hf was found in the TGO on the OD-free coating due to outward diffusion of Hf from the superalloy, causing accelerated TGO thickening and spalling. The OD-coating effectively prevented Hf from outward diffusion. Only small amount of Hf diffused to the coating surface and improved the TGO adherence by virtue of the reactive element effect. The OD-coating exhibited an improved oxidation resistance as compared to the OD-free coating.

  3. Non-enzymatic hydrogen peroxide detection at NiO nanoporous thin film- electrodes prepared by physical vapor deposition at oblique angles

    International Nuclear Information System (INIS)

    Salazar, Pedro; Rico, Victor; González-Elipe, Agustín R.

    2017-01-01

    Highlights: • A non-enzymatic sensor for H 2 O 2 detection based on nickel thin film is reported. • Nanostructured nickel thin films are prepared by physical vapor deposition at oblique angles. • Main analytical parameters were obtained under optimal operation conditions. • Sensors depict an outstanding selectivity and a high stability. • Sensors are successfully used to determine H 2 O 2 in antiseptic solutions. - Abstract: In this work we report a non-enzymatic sensor for hydrogen peroxide (H 2 O 2 ) detection based on nanostructured nickel thin films prepared by physical vapor deposition at oblique angles. Porous thin films deposited on ITO substrates were characterized by X-ray diffraction analysis, scanning electron microcopy (SEMs), X-ray photoelectron spectroscopy (XPS) and electrochemical techniques such as Cyclic Voltammetry (CV) and Constant Potential Amperometry (CPA). The microstructure of the thin films consisted of inclined and separated Ni nanocolumns forming a porous thin layer of about 500 nm thickness. Prior to their use, the films surface was electrochemically modified and the chemical state studied by CV and XPS analysis. These techniques also showed that Ni 2+ /Ni 3+ species were involved in the electrochemical oxidation and detection of H 2 O 2 in alkaline medium. Main analytical parameters such as sensitivity (807 mA M −1 cm −2 ), limit of detection (3.22 μM) and linear range (0.011–2.4 mM) were obtained under optimal operation conditions. Sensors depicted an outstanding selectivity and a high stability and they were successfully used to determine H 2 O 2 concentration in commercial antiseptic solutions.

  4. Atmospheric pressure plasma assisted calcination by the preparation of TiO2 fibers in submicron scale

    Science.gov (United States)

    Medvecká, Veronika; Kováčik, Dušan; Zahoranová, Anna; Černák, Mirko

    2018-01-01

    Atmospheric pressure plasma assisted calcination by the preparation of TiO2 submicron fibers as a low-temperature alternative to the conventional thermal annealing was studied. A special type of dielectric barrier discharge was used for plasma treatment of hybrid titanium butoxide/polyvinylpyrrolidone (Ti(Bu)/PVP) fibers prepared by forcespinning to decompose and oxidize the base polymer and precursor. The obtained fibers were characterized by changes in chemical bonds on the surface using Fourier Transform Infrared Spectroscopy (FTIR), chemical composition by using Energy-Dispersive X-Ray Spectroscopy (EDX), X-ray Photoelectron Spectroscopy (XPS). The morphology of fibers was investigated by Scanning Electron Microscopy (SEM). A significant decrease of organic components was reached by short plasma exposure times less than 1 h. The obtained fibers exhibit a high surface porosity without degradation of the fibrous structure. The results obtained indicate that atmospheric pressure plasma assisted calcination can be a viable low-temperature, energy- and time-saving alternative or pre-treatment method for the conventional high-temperature thermal calcination.

  5. Controlling the physical parameters of crystalline CIGS nanowires for use in superstrate configuration using vapor phase epitaxy

    Science.gov (United States)

    Lee, Dongjin; Jeon, H. C.; Kang, T. W.; Kumar, Sunil

    2018-03-01

    Indium tin oxide (ITO) is a suitable candidate for smart windows and bifacial semi-transparent solar cell applications. In this study, highly crystalline CuInGaSe2 (CIGS) nanowires were successfully grown by horizontal-type vapor phase epitaxy on an ITO substrate. Length, diameter, and density of the nanowires were studied by varying the growth temperature (500, 520, and 560 °C), time (3.5, 6.5, and 9.5 h), and type of catalyst (In, Au, and Ga). Length, diameter, and density of the nanowires were found to be highly dependent on the growth conditions. At an optimized growth period and temperature of 3.5 h and 520 °C, respectively, the length and diameter of the nanowires were found to increase when grown in a catalyst-free environment. However, the density of the nanowires was found to be higher while using a catalyst during growth. Even in a catalyst-free environment, an Indium cluster formed at the bottom of the nanowires. The source of these nanowires is believed to be Indium from the ITO substrate which was observed in the EDS measurement. TEM-based EDS and line EDS indicated that the nanowires are made up of CIGS material with a very low Gallium content. XRD measurements also show the appearance of wurtzite CIS nanowires grown on ITO in addition to the chalcopyrite phase. PL spectroscopy was done to see the near-band-edge emission for finding band-to-band optical transition in this material. Optical response of the CIGS nanowire network was also studied to see the photovoltaic effect. This work creates opportunities for making real solar cell devices in superstrate configuration.

  6. UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    W. Kong

    2017-03-01

    Full Text Available A high Al-content (y > 0.4 multi-quantum-well (MQW structure with a quaternary InxAlyGa(1-x-yN active layer was synthesized using plasma-assisted molecular beam epitaxy. The MQW structure exhibits strong carrier confinement and room temperature ultraviolet-B (UVB photoluminescence an order of magnitude stronger than that of a reference InxAlyGa(1-x-yN thin film with comparable composition and thickness. The samples were characterized using spectroscopic ellipsometry, atomic force microscopy, and high-resolution X-ray diffraction. Numerical simulations suggest that the UVB emission efficiency is limited by dislocation-related non-radiative recombination centers in the MQW and at the MQW - buffer interface. Emission efficiency can be significantly improved by reducing the dislocation density from 109cm−2 to 107cm−2 and by optimizing the width and depth of the quantum wells.

  7. Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

    International Nuclear Information System (INIS)

    Zhang Meng; Bhattacharya, Pallab; Guo Wei; Banerjee, Animesh

    2010-01-01

    Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 deg. C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1x10 18 cm -3 . The corresponding doping efficiency and hole mobility are ∼4.9% and 3.7 cm 2 /V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (λ peak =529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 Ω.

  8. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kong, W., E-mail: wei.kong@duke.edu; Jiao, W. Y.; Kim, T. H.; Brown, A. S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Roberts, A. T. [Charles Bowden Laboratory, Army Aviation and Missile RD& E Center, Redstone Arsenal, Alabama 35898 (United States); Fournelle, J. [Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706 (United States); Losurdo, M. [CNR-NANOTEC, Istituto di Nanotecnologia, via Orabona, 4-70126 Bari (Italy); Everitt, H. O. [Charles Bowden Laboratory, Army Aviation and Missile RD& E Center, Redstone Arsenal, Alabama 35898 (United States); Department of Physics, Duke University, Durham, North Carolina 27708 (United States)

    2015-09-28

    Thin films of the wide bandgap quaternary semiconductor In{sub x}Al{sub y}Ga{sub (1−x−y)}N with low In (x = 0.01–0.05) and high Al composition (y = 0.40–0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280 nm–320 nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation.

  9. GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, H. Y.; Yang, W. C.; Lee, P. Y.; Lin, C. W.; Cheng, Kai-Yuan; Hsieh, K. C.; Cheng, K. Y., E-mail: kycheng@ee.nthu.edu.tw [Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Hsu, C.-H. [Division of Scientific Research, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

    2016-08-22

    GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.

  10. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    International Nuclear Information System (INIS)

    Bolat, Sami; Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-01

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N 2 /H 2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH 3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N 2 :H 2 ambient

  11. Multilayered metal oxide thin film gas sensors obtained by conventional and RF plasma-assisted laser ablation

    International Nuclear Information System (INIS)

    Mitu, B.; Marotta, V.; Orlando, S.

    2006-01-01

    Multilayered thin films of In 2 O 3 and SnO 2 have been deposited by conventional and RF plasma-assisted reactive pulsed laser ablation, with the aim to evaluate their behaviour as toxic gas sensors. The depositions have been carried out by a frequency doubled Nd-YAG laser (λ = 532 nm, τ = 7 ns) on Si(1 0 0) substrates, in O 2 atmosphere. The thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrical resistance measurements. A comparison of the electrical response of the simple (indium oxide, tin oxide) and multilayered oxides to toxic gas (nitric oxide, NO) has been performed. The influence on the structural and electrical properties of the deposition parameters, such as substrate temperature and RF power is reported

  12. Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Oshima, Yuichi; Ahmadi, Elaheh; Kaun, Stephen; Wu, Feng; Speck, James S.

    2018-01-01

    We investigated the homoepitaxial growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy. The growth rate of β-Ga2O3 increased with increasing Ga-flux, reaching a clear plateau of 56 nm h-1, and then decreased at higher Ga-flux. The growth rate decreased from 56 to 42 nm h-1 when the substrate temperature was increased from 750 °C to 800 °C. The growth rate was negative (net etching) when only Ga-flux was supplied. The etching rate proportionally increased with increasing the Ga-flux, reaching 84 nm h-1. The etching was enhanced at higher temperatures. It was found that Ga-etching of (001) β-Ga2O3 substrates prior to the homoepitaxial growth markedly improved the surface roughness of the film.

  13. Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Brown, April S.; Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Morse, Michael [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

    2006-06-15

    We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350 C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450 C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Brown, April [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

    2006-06-15

    The growth of GaN by plasma assisted molecular beam epitaxy on GaN template substrates (GaN on sapphire) is investigated with in-situ multi-channel spectroscopic ellipsometry. Growth is performed under various Ga/N flux ratios at growth temperatures in the range 710-780 C. The thermal roughening of the GaN template caused by decomposition of the surface is investigated through the temporal variation of the GaN pseudodielectric function over the temperature range of 650 C to 850 C. The structural, morphological, and optical properties are also discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Realization of high efficiency in a plasma-assisted microwave source with two-dimensional electron motion

    International Nuclear Information System (INIS)

    Shkvarunets, A.G.; Carmel, Y.; Nusinovich, G.S.; Abu-elfadl, T.M.; Rodgers, J.; Antonsen, T.M. Jr.; Granatstein, V.; Goebel, D.M.

    2002-01-01

    Conventional microwave sources utilize a strong axial magnetic field to guide an electron beam through an interaction region. A plasma-assisted slow wave microwave oscillator (Pasotron) can operate without an external magnetic field because the presence of ions neutralizes the space charge in the beam, permits the self-pinch forces to provide beam propagation, and allows for the radial motion of electrons under the action of transverse fields of the wave. While the inherent efficiency of conventional microwave sources with 1D electron flow is limited to 15%-20%, it is shown in this work that both the calculated and measured inherent efficiency of devices with 2D electron flow can be higher than 50%. Both in situ diagnostics and analysis confirmed that the enhanced efficiency is due to the fact that rf forces dominate the beam dynamics

  16. Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Shinoda, Hiroyuki; Mutsukura, Nobuki

    2005-01-01

    Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

  17. P-type doping of semipolar GaN(11 anti 22) by plasma-assisted molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Das, A.; Lahourcade, L. [Equipe Mixte CEA-CNRS, Nanophysique et Semiconducteurs, CEA-Grenoble, INAC/SP2M, Grenoble (France); Pernot, J. [Institut Neel, CNRS et Universite Joseph Fourier, Grenoble (France); Valdueza-Felip, S. [Equipe Mixte CEA-CNRS, Nanophysique et Semiconducteurs, CEA-Grenoble, INAC/SP2M, Grenoble (France); Dept. Electronica, Escuela Politecnica, Universidad de Alcala, Alcala de Henares, Madrid (Spain); Ruterana, P. [CIMAP, UMR6252, CNRS-ENSICAEN-CEA-UCBN, Caen (France); Laufer, A.; Eickhoff, M. [I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen (Germany); Monroy, E.

    2010-07-15

    We report the effect of Mg doping on the growth kinetics of semipolar GaN(11-22) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(11-22). As a result, the growth widow is reduced for Mg doped layers, and we observe a certain deterioration of the surface morphology. In spite of this difficulties, homogenous Mg incorporation is achieved and layers display p -type conductivity for Mg atomic concentration higher than 7 x 10{sup 18} cm{sup -3}. Microscopy studies show no evidence of the pyramidal defects or polarity inversion domains found in Mg-doped GaN(0001). (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. The growth of III-V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Beh, K.P.; Yam, F.K.; Chin, C.W.; Tneh, S.S.; Hassan, Z.

    2010-01-01

    This paper reports the growth of InGaN/GaN/AlN epitaxial layer on Si(1 1 1) substrate by utilizing plasma-assisted molecular beam epitaxy (PA-MBE) system. The as-grown film was characterized using high-resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). High work function metals, iridium and gold were deposited on the film as metal contacts and their electrical characteristics at pre- and post-annealing were studied. The structural quality of this film is comparative to the values reported in the literature, and the indium molar fraction is 0.57 by employing Vegard's law. The relatively low yellow band emission signifies the grown film is of high quality. For metal contact studies it was found that the post-annealed sample for 5 min shows good conductivity as compared to the other samples.

  19. VO2 Thermochromic Films on Quartz Glass Substrate Grown by RF-Plasma-Assisted Oxide Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Dong Zhang

    2017-03-01

    Full Text Available Vanadium dioxide (VO2 thermochromic thin films with various thicknesses were grown on quartz glass substrates by radio frequency (RF-plasma assisted oxide molecular beam epitaxy (O-MBE. The crystal structure, morphology and chemical stoichiometry were investigated systemically by X-ray diffraction (XRD, atomic force microscopy (AFM, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS analyses. An excellent reversible metal-to-insulator transition (MIT characteristics accompanied by an abrupt change in both electrical resistivity and optical infrared (IR transmittance was observed from the optimized sample. Remarkably, the transition temperature (TMIT deduced from the resistivity-temperature curve was reasonably consistent with that obtained from the temperature-dependent IR transmittance. Based on Raman measurement and XPS analyses, the observations were interpreted in terms of residual stresses and chemical stoichiometry. This achievement will be of great benefit for practical application of VO2-based smart windows.

  20. Modeling of electron behaviors under microwave electric field in methane and air pre-mixture gas plasma assisted combustion

    Science.gov (United States)

    Akashi, Haruaki; Sasaki, K.; Yoshinaga, T.

    2011-10-01

    Recently, plasma-assisted combustion has been focused on for achieving more efficient combustion way of fossil fuels, reducing pollutants and so on. Shinohara et al has reported that the flame length of methane and air premixed burner shortened by irradiating microwave power without increase of gas temperature. This suggests that electrons heated by microwave electric field assist the combustion. They also measured emission from 2nd Positive Band System (2nd PBS) of nitrogen during the irradiation. To clarify this mechanism, electron behavior under microwave power should be examined. To obtain electron transport parameters, electron Monte Carlo simulations in methane and air mixture gas have been done. A simple model has been developed to simulate inside the flame. To make this model simple, some assumptions are made. The electrons diffuse from the combustion plasma region. And the electrons quickly reach their equilibrium state. And it is found that the simulated emission from 2nd PBS agrees with the experimental result. Recently, plasma-assisted combustion has been focused on for achieving more efficient combustion way of fossil fuels, reducing pollutants and so on. Shinohara et al has reported that the flame length of methane and air premixed burner shortened by irradiating microwave power without increase of gas temperature. This suggests that electrons heated by microwave electric field assist the combustion. They also measured emission from 2nd Positive Band System (2nd PBS) of nitrogen during the irradiation. To clarify this mechanism, electron behavior under microwave power should be examined. To obtain electron transport parameters, electron Monte Carlo simulations in methane and air mixture gas have been done. A simple model has been developed to simulate inside the flame. To make this model simple, some assumptions are made. The electrons diffuse from the combustion plasma region. And the electrons quickly reach their equilibrium state. And it is found

  1. Vapor deposition of tantalum and tantalum compounds

    International Nuclear Information System (INIS)

    Trkula, M.

    1996-01-01

    Tantalum, and many of its compounds, can be deposited as coatings with techniques ranging from pure, thermal chemical vapor deposition to pure physical vapor deposition. This review concentrates on chemical vapor deposition techniques. The paper takes a historical approach. The authors review classical, metal halide-based techniques and current techniques for tantalum chemical vapor deposition. The advantages and limitations of the techniques will be compared. The need for new lower temperature processes and hence new precursor chemicals will be examined and explained. In the last section, they add some speculation as to possible new, low-temperature precursors for tantalum chemical vapor deposition

  2. Mobile vapor recovery and vapor scavenging unit

    International Nuclear Information System (INIS)

    Stokes, C.A.; Steppe, D.E.

    1991-01-01

    This patent describes a mobile anti- pollution apparatus, for the recovery of hydrocarbon emissions. It comprises a mobile platform upon which is mounted a vapor recovery unit for recovering vapors including light hydrocarbons, the vapor recovery unit having an inlet and an outlet end, the inlet end adapted for coupling to an external source of hydrocarbon vapor emissions to recover a portion of the vapors including light hydrocarbons emitted therefrom, and the outlet end adapted for connection to a means for conveying unrecovered vapors to a vapor scavenging unit, the vapor scavenging unit comprising an internal combustion engine adapted for utilizing light hydrocarbon in the unrecovered vapors exiting from the vapor recovery unit as supplemental fuel

  3. Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications

    NARCIS (Netherlands)

    Hoogeland, D.; Jinesh, K.B.; Roozeboom, F.; Besling, W.F.A.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2009-01-01

    By employing plasma-assisted atomic layer deposition, thin films of Al2O3 and TiN are subsequently deposited in a single reactor at a single substrate temperature with the objective of fabricating high-quality TiN/Al2O3 / p-Si metal-oxide-semiconductor capacitors. Transmission electron microscopy

  4. CuAlO2 and CuAl2O4 thin films obtained by stacking Cu and Al films using physical vapor deposition

    Science.gov (United States)

    Castillo-Hernández, G.; Mayén-Hernández, S.; Castaño-Tostado, E.; DeMoure-Flores, F.; Campos-González, E.; Martínez-Alonso, C.; Santos-Cruz, J.

    2018-06-01

    CuAlO2 and CuAl2O4 thin films were synthesized by the deposition of the precursor metals using the physical vapor deposition technique and subsequent annealing. Annealing was carried out for 4-6 h in open and nitrogen atmospheres respectively at temperatures of 900-1000 °C with control of heating and cooling ramps. The band gap measurements ranged from 3.3 to 4.5 eV. Electrical properties were measured using the van der Pauw technique. The preferred orientations of CuAlO2 and CuAl2O4 were found to be along the (1 1 2) and (3 1 1) planes, respectively. The phase percentages were quantified using a Rietveld refinement simulation and the energy dispersive X-ray spectroscopy indicated that the composition is very close to the stoichiometry of CuAlO2 samples and with excess of aluminum and deficiency of copper for CuAl2O4 respectively. High resolution transmission electron microscopy identified the principal planes in CuAlO2 and in CuAl2O4. Higher purities were achieved in nitrogen atmosphere with the control of the cooling ramps.

  5. Silicon-substituted hydroxyapatite coating with Si content on the nanotube-formed Ti–Nb–Zr alloy using electron beam-physical vapor deposition

    International Nuclear Information System (INIS)

    Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

    2013-01-01

    The purpose of this study was to investigate the electrochemical characteristics of silicon-substituted hydroxyapatite coatings on the nanotube-formed Ti–35Nb–10Zr alloy. The silicon-substituted hydroxyapatite (Si–HA) coatings on the nanotube structure were deposited by electron beam-physical vapor deposition and anodization methods, and biodegradation properties were analyzed by potentiodynamic polarization and electrochemical impedance spectroscopy measurement. The surface characteristics were analyzed by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction (XRD). The Si–HA layers were deposited with rough features having highly ordered nanotube structures on the titanium alloy substrate. The thickness of the Si–HA coating was less than that of the HA coating. The XRD results confirmed that the Si–HA coating on the nanotube structure consisted of TiO 2 anatase, TiO 2 rutile, hydroxyapatite, and calcium phosphate silicate. The Si–HA coating surface exhibited lower I corr than the HA coating, and the polarization resistance was increased by substitution of silicon in hydroxyapatite. - Highlights: • Silicon substituted hydroxyapatite (Si–HA) was coated on nanotubular titanium alloy. • The Si–HA coating thickness was less than single hydroxyapatite (HA) coating. • Si–HA coatings consisted of TiO 2 , HA, and Ca 5 (PO 4 ) 2 SiO 4 . • Polarization resistance of the coating was increased by Si substitution in HA

  6. Highly selective etching of silicon nitride to physical-vapor-deposited a-C mask in dual-frequency capacitively coupled CH2F2/H2 plasmas

    International Nuclear Information System (INIS)

    Kim, J. S.; Kwon, B. S.; Heo, W.; Jung, C. R.; Park, J. S.; Shon, J. W.; Lee, N.-E.

    2010-01-01

    A multilevel resist (MLR) structure can be fabricated based on a very thin amorphous carbon (a-C) layer ( congruent with 80 nm) and Si 3 N 4 hard-mask layer ( congruent with 300 nm). The authors investigated the selective etching of the Si 3 N 4 layer using a physical-vapor-deposited (PVD) a-C mask in a dual-frequency superimposed capacitively coupled plasma etcher by varying the process parameters in the CH 2 F 2 /H 2 /Ar plasmas, viz., the etch gas flow ratio, high-frequency source power (P HF ), and low-frequency source power (P LF ). They found that under certain etch conditions they obtain infinitely high etch selectivities of the Si 3 N 4 layers to the PVD a-C on both the blanket and patterned wafers. The etch gas flow ratio played a critical role in determining the process window for infinitely high Si 3 N 4 /PVD a-C etch selectivity because of the change in the degree of polymerization. The etch results of a patterned ArF photoresisit/bottom antireflective coating/SiO x /PVD a-C/Si 3 N 4 MLR structure supported the idea of using a very thin PVD a-C layer as an etch-mask layer for the Si 3 N 4 hard-mask pattern with a pattern width of congruent with 80 nm and high aspect ratio of congruent with 5.

  7. Performance of Erbium-doped TiO2 thin film grown by physical vapor deposition technique

    Science.gov (United States)

    Lahiri, Rini; Ghosh, Anupam; Dwivedi, Shyam Murli Manohar Dhar; Chakrabartty, Shubhro; Chinnamuthu, P.; Mondal, Aniruddha

    2017-09-01

    Undoped and Erbium-doped TiO2 thin films (Er:TiO2 TFs) were fabricated on the n-type Si substrate using physical vapour deposition technique. Field emission scanning electron microscope showed the morphological change in the structure of Er:TiO2 TF as compared to undoped sample. Energy dispersive X-ray spectroscopy (EDX) confirmed the Er doping in the TiO2 thin film (TF). The XRD and Raman spectrum showed the presence of anatase phase TiO2 and Er2O3 in the Er:TiO2 TF. The Raman scattering depicted additional number of vibrational modes for Er:TiO2 TF due to the presence of Er as compared to the undoped TiO2 TF. The UV-Vis absorption measurement showed that Er:TiO2 TF had approximately 1.2 times more absorption over the undoped TiO2 TF in the range of 300-400 nm. The main band transition, i.e., the transition between the oxygen (2p) state and the Ti (3d) state was obtained at 3.0 eV for undoped TiO2 and at 3.2 eV for Er:TiO2 TF, respectively. The photo responsivity measurement was done on both the detectors, where Er:TiO2 TF detector showed better detectivity ( D *), noise equivalent power and temporal response as compared to undoped detector under ultra-violet illumination.

  8. Petroleum Vapor Intrusion

    Science.gov (United States)

    One type of vapor intrusion is PVI, in which vapors from petroleum hydrocarbons such as gasoline, diesel, or jet fuel enter a building. Intrusion of contaminant vapors into indoor spaces is of concern.

  9. Silicon-substituted hydroxyapatite coating with Si content on the nanotube-formed Ti–Nb–Zr alloy using electron beam-physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Yong-Hoon [Division of Restorative, Prosthetic and Primary Care Dentistry, College of Dentistry, The Ohio State University, 305 W. 12th Ave., Columbus, OH (United States); Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Restorative, Prosthetic and Primary Care Dentistry, College of Dentistry, The Ohio State University, 305 W. 12th Ave., Columbus, OH (United States)

    2013-11-01

    The purpose of this study was to investigate the electrochemical characteristics of silicon-substituted hydroxyapatite coatings on the nanotube-formed Ti–35Nb–10Zr alloy. The silicon-substituted hydroxyapatite (Si–HA) coatings on the nanotube structure were deposited by electron beam-physical vapor deposition and anodization methods, and biodegradation properties were analyzed by potentiodynamic polarization and electrochemical impedance spectroscopy measurement. The surface characteristics were analyzed by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction (XRD). The Si–HA layers were deposited with rough features having highly ordered nanotube structures on the titanium alloy substrate. The thickness of the Si–HA coating was less than that of the HA coating. The XRD results confirmed that the Si–HA coating on the nanotube structure consisted of TiO{sub 2} anatase, TiO{sub 2} rutile, hydroxyapatite, and calcium phosphate silicate. The Si–HA coating surface exhibited lower I{sub corr} than the HA coating, and the polarization resistance was increased by substitution of silicon in hydroxyapatite. - Highlights: • Silicon substituted hydroxyapatite (Si–HA) was coated on nanotubular titanium alloy. • The Si–HA coating thickness was less than single hydroxyapatite (HA) coating. • Si–HA coatings consisted of TiO{sub 2}, HA, and Ca{sub 5}(PO{sub 4}){sub 2}SiO{sub 4}. • Polarization resistance of the coating was increased by Si substitution in HA.

  10. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  11. High-rate deposition of photocatalytic TiO2 films by oxygen plasma assist reactive evaporation method

    International Nuclear Information System (INIS)

    Sakai, Tetsuya; Kuniyoshi, Yuji; Aoki, Wataru; Ezoe, Sho; Endo, Tatsuya; Hoshi, Yoichi

    2008-01-01

    High-rate deposition of titanium dioxide (TiO 2 ) film was attempted using oxygen plasma assisted reactive evaporation (OPARE) method. Photocatalytic properties of the film were investigated. During the deposition, the substrate temperature was fixed at 400 deg. C. The film deposition rate can be increased by increasing the supply of titanium atoms to the substrate, although oversupply of the titanium atoms causes oxygen deficiency in the films, which limits the deposition rate. The film structure depends strongly on the supply ratio of oxygen molecules to titanium atoms O 2 /Ti and changes from anatase to rutile structure as the O 2 /Ti supply ratio increased. Consequently, the maximum deposition rates of 77.0 nm min -1 and 145.0 nm min -1 were obtained, respectively, for the anatase and rutile film. Both films deposited at such high rates showed excellent hydrophilicity and organic decomposition performance. Even the film with rutile structure deposited at 145.0 nm min -1 had a contact angle of less than 2.5 deg. by UV irradiation for 5.0 h and an organics-decomposition performance index of 8.9 [μmol l -1 min -1 ] for methylene blue

  12. Roles of kinetics and energetics in the growth of AlN by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Im, I. H.; Minegishi, T.; Hanada, T.; Lee, S. W.; Cho, M. W.; Yao, T.; Oh, D. C.; Chang, J. H.

    2006-01-01

    The roles of kinetics and energetics in the growth processes of AlN on c-sapphire by plasma assisted molecular beam epitaxy are investigated by varying the growth rate from 1 to 31 A/min and the substrate temperature from 800 to 1000 .deg. C. The energetics is found to govern the growth of AlN in the low-growth rate region even at a low substrate temperature of 800 .deg. C owing to the enhanced residence time of adatoms, thereby increasing the surface migration length. As the growth rate increases, the growth tends to be governed by kinetics because of a reduction in the residence time of adatoms. Consequently, the surface roughness and crystal quality are greatly improved for the low-growth-rate case. In addition, the lattice strain relaxation is completed from the beginning of epitaxy for energetics-limiting growth while lattice strain relaxation is retarded for kinetics-limiting growth because of pre-existing partial strain relaxation. Energetics becomes more favorable as the substrate temperature is raised because of an increase in the surface diffusion length owing to an enhanced diffusion coefficient. Consequently high-crystal-quality AlN layers are grown under the energetics-limiting growth condition with a screw dislocation density of 7.4 x 10 8 cm -2 even for a thin 42-nm thick film.

  13. Plasma-assisted partial oxidation of methane at low temperatures: numerical analysis of gas-phase chemical mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Goujard, Valentin; Nozaki, Tomohiro; Yuzawa, Shuhei; Okazaki, Ken [Department of Mechanical and Control Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, 1528552, Tokyo (Japan); Agiral, Anil, E-mail: tnozaki@mech.titech.ac.jp [Mesoscale Chemical Systems, MESA Institute for Nanotechnology, Faculty of Science and Technology, University of Twente, PO Box 217, 7500 AE, Enschede (Netherlands)

    2011-07-13

    Methane partial oxidation was investigated using a plasma microreactor. The experiments were performed at 5 and 300 deg. C. Microreactor configuration allows an efficient evacuation of the heat generated by methane partial oxidation and dielectric barrier discharges, allowing at the same time a better temperature control. At 5 deg. C, liquid condensation of low vapour pressure compounds, such as formaldehyde and methanol, occurs. {sup 1}H-NMR analysis allowed us to demonstrate significant CH{sub 3}OOH formation during plasma-assisted partial oxidation of methane. Conversion and product selectivity were discussed for both temperatures. In the second part of this work, a numerical simulation was performed and a gas-phase chemical mechanism was proposed and discussed. From the comparison between the experimental results and the simulation it was found that CH{sub 3}OO{center_dot} formation has a determinant role in oxygenated compound production, since its fast formation disfavoured radical recombination. At 5 deg. C the oxidation leads mainly towards oxygenated compound formation, and plasma dissociation was the major phenomenon responsible for CH{sub 4} conversion. At 300 deg. C, higher CH{sub 4} conversion resulted from oxidative reactions induced by {center_dot}OH radicals with a chemistry predominantly oxidative, producing CO, H{sub 2}, CO{sub 2} and H{sub 2}O.

  14. Predictive Analysis for the Thermal Diffusion of the Plasma-Assisted Machining of Superalloy Inconel-718 Based on Exponential Smoothing

    Directory of Open Access Journals (Sweden)

    Chen Shao-Hsien

    2018-01-01

    Full Text Available Nickel base and titanium base materials have been widely applied to engines in aerospace industry, and these engines are essential components of airplanes. The machining characteristics of aerospace materials may cause machining cutters to be worn down in a short time and thus reduce the accuracy of processing. The plasma-assisted machining adopted in the research is a kind of the complex machining method. In the cases of nickel base and titanium base alloys, the method can heat workpieces in an extremely short duration to soften the materials for the ease of cutting so that the cutting force, cutter wear, and machining cost will all be reduced. The research adopted plasma heating to soften parts of the materials and aimed to explore the heating of nickel base alloy. The temperature variation of the materials was investigated and measured by adjusting the current and feed velocity. Moreover, Inconel-718 superalloy was adopted for the comparison with nickel base alloy for the observation of the influence and change brought by heat, and the method of exponential smoothing was adopted to conduct the prediction and analysis of thermal diffusion for understanding the influence and change brought by electric current on nickel base materials. Finally, given the current from 20 A to 80 A and feed velocity from 1,000 mm/min to 3,000 mm/min, the influence of thermal diffusion was investigated and the related model was built.

  15. Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

    Science.gov (United States)

    Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

    2016-11-24

    Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

  16. Specific features of NH3 and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

    International Nuclear Information System (INIS)

    Alexeev, A. N.; Krasovitsky, D. M.; Petrov, S. I.; Chaly, V. P.; Mamaev, V. V.; Sidorov, V. G.

    2015-01-01

    The specific features of how nitride HEMT heterostructures are produced by NH 3 and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely high temperatures (up to 1150°C) can drastically improve the structural perfection of the active GaN layers and reduce the dislocation density in these layers to values of 9 × 10 8 −1 × 10 9 cm −2 . The use of buffer layers of this kind makes it possible to obtain high-quality GaN/AlGaN heterostructures by both methods. At the same time, in contrast to ammonia MBE which is difficult to apply at T < 500°C (because of the low efficiency of ammonia decomposition), PA MBE is rather effective at low temperatures, e.g., for the growth of InAlN layers lattice-matched with GaN. The results obtained in the MBE growth of AlN/AlGaN/GaN/InAlN heterostructures by both PA-MBE and NH 3 -MBE with an extremely high ammonia flux are demonstrated

  17. Plasma assisted growth of MoO{sub 3} films on different substrate locations relative to sublimation source

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Rabindar K., E-mail: rkrksharma6@gmail.com; Saini, Sujit K.; Kumar, Prabhat; Singh, Megha; Reddy, G. B. [Thin film laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi – 110016 (India)

    2016-05-06

    In the present paper, we reported the role of substrate locations relative to source on the growth of MoO{sub 3} films deposited on Ni coated glass substrates using plasma assisted sublimation process (PASP). According to the XRD and SEM results, substrate location is very crucial factor to control the morphology of MoO{sub 3} films and the best nanostructure growth (in terms of alignments and features) is obtained in case of Sample B (in which substrate is placed on source). The structural results point out that all films exhibit only orthorhombic phase of molybdenum oxide (i.e. α-MoO{sub 3})but the most preferential growth is recorded in Sample B due to the presence of intense peaks crossponding to only (0 k 0) family of crystal planes (k = 2, 4,6..). The Raman analysis again confirms the orthorhombic nature of MoO{sub 3} NFs and details of vibrational bondsin Sample B have been given in the present report. The MoO{sub 3} NFs show intense PL emission in wavelength range of 300-700 nm with three peaks located at 415, 490, and 523 nm in accordance to the improved crystallinity in Sample B.

  18. The impact of SiC substrate treatment on the heteroepitaxial growth of GaN by plasma assisted MBE

    Energy Technology Data Exchange (ETDEWEB)

    Brown, A.S.; Kim, T.H.; Choi, S.; Morse, M.; Wu, P. [Department of Electrical and Computer Engineering, Duke University, Durham, NC 27709 (United States); Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM via Orabona 4 -70126, Bari (Italy)

    2005-11-01

    We report on the impact of the preparation of the Si-face 4H-SiC(0001){sub Si} substrate using a Ga flash-off process on the epitaxial growth of GaN by plasma-assisted molecular beam epitaxy. The nucleation, as well as the resultant structural and morphological properties of GaN grown directly on 4H-SiC(0001){sub Si} are strongly influenced by the chemical and morphological modifications of the SiC surface induced by the Ga flash-off process. Herein we describe the impact of the specific concentration of Ga incident on the surface (quantified in terms of monolayer (ML) coverage): of 0.5 ML, 1ML and 2ML. The residual oxygen at the SiC surface, unintentional SiC nitridation and the formation of cubic GaN grains during the initial nucleation stage, are all reduced when a 2 ML Ga flash is used. All of the above factors result in structural improvement of the GaN epitaxial layers. The correlation between the SiC surface modification, the initial nucleation stage, and the GaN epitaxial layer structural quality has been articulated using x-ray photoelectron spectroscopy, X-ray diffraction, atomic force microscopy and spectroscopic ellipsometry data. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Plasma-assisted quartz-to-quartz direct bonding for the fabrication of a multilayered quartz template for nanoimprint lithography

    International Nuclear Information System (INIS)

    Lee, Jihye; Ali, Altun; Kim, Ki-don; Choi, Dae-guen; Choi, Jun-Hyuk; Jeong, Jun-ho; Kim, Jae-Hyun

    2010-01-01

    In this paper, a low-temperature plasma-assisted process is developed to realize a uniform, ultraviolet (UV) transparent and chemically inert quartz-to-quartz direct bonding. Two sets of pretests are performed in order to understand how the bond surface energy changes with the plasma exposure time and the wet etching of quartz, respectively. The developed technique is used to fabricate a multilayered quartz template for UV nanoimprint lithography (UV-NIL). The multilayered quartz template is fabricated by bonding a square piece of a standard quartz wafer, which is about 625 µm in thickness, to a wet-etched 6.35 mm thick quartz photomask plate. A fabricated multilayered template is loaded to the commercial UV-NIL tool Imprio(TM) 100, and NIL was performed successfully. The developed direct bonding technique makes it possible for standard quartz wafers, which are compatible with high-resolution semiconductor fabrication processes, to be utilized as the templates in commercial UV-NIL machines with enhanced mechanical stability.

  20. Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Zhang, Jiaqi; Wang, Lei; Wang, Qingpeng; Jiang, Ying; Li, Liuan; Ao, Jin-Ping; Zhu, Huichao

    2016-01-01

    An Al-based ohmic process assisted by an inductively coupled plasma (ICP) recess treatment is proposed for AlGaN/GaN heterostructure field-effect transistors (HFETs) to realize ohmic contact, which is only needed to anneal at 500 °C. The recess treatment was done with SiCl 4 plasma with 100 W ICP power for 20 s and annealing at 575 °C for 1 min. Under these conditions, contact resistance of 0.52 Ωmm was confirmed. To suppress the ball-up phenomenon and improve the surface morphology, an Al/TiN structure was also fabricated with the same conditions. The contact resistance was further improved to 0.30 Ωmm. By using this plasma-assisted ohmic process, a gate-first HFET was fabricated. The device showed high drain current density and high transconductance. The leakage current of the TiN-gate device decreased to 10 −9 A, which was 5 orders of magnitude lower than that of the device annealed at 800 °C. The results showed that the low-temperature ohmic contact process assisted by ICP treatment is promising for the fabrication of gate-first and self-aligned gate HFETs. (paper)

  1. Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Chung, Yee Ling; Peng Xingyu; Liao, Ying Chieh; Yao Shude; Chen, Li Chyong; Chen, Kuei Hsien; Feng, Zhe Chuan

    2011-01-01

    A series of InN thin films was grown on sapphire substrates via plasma-assisted molecular beam epitaxy (PA-MBE) with different nitrogen plasma power. Various characterization techniques, including Hall, photoluminescence, Raman scattering and Rutherford backscattering, have been employed to study these InN films. Good crystalline wurtzite structures have been identified for all PA-MBE grown InN films on sapphire substrate, which have narrower XRD wurtzite (0002) peaks, showed c-axis Raman scattering allowed longitudinal optical (LO) modes of A 1 and E 1 plus E 2 symmetry, and very weak backscattering forbidden transverse optical (TO) modes. The lower plasma power can lead to the lower carrier concentration, to have the InN film close to intrinsic material with the PL emission below 0.70 eV. With increasing the plasma power, high carrier concentration beyond 1 x 10 20 cm -3 can be obtained, keeping good crystalline perfection. Rutherford backscattering confirmed most of InN films keeping stoichiometrical In/N ratios and only with higher plasma power of 400 W leaded to obvious surface effect and interdiffusion between the substrate and InN film.

  2. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States); Zheng, Jian-Guo [Irvine Materials Research Institute, University of California, Irvine, California 92697-2800 (United States)

    2016-07-25

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  3. Arc plasma assisted rotating electrode process for preparation of metal pebbles

    International Nuclear Information System (INIS)

    Mohanty, T.; Tripathi, B.M.; Mahata, T.; Sinha, P.K.

    2014-01-01

    Spherical beryllium pebbles of size ranging from 0.2-2 mm are required as neutron multiplying material in solid Test Blanket Module (TBM) of International Thermonuclear Experimental Reactor (ITER). Rotating electrode process (REP) has been identified as a suitable technique for preparation of beryllium pebbles. In REP, arc plasma generated between non-consumable electrode (cathode) and rotating metal electrode (anode) plays a major role for continuous consumption of metal electrode and preparation of spherical metal pebbles. This paper focuses on description of the process, selection of sub-systems for development of REP experimental set up and optimization of arc parameters, such as, cathode geometry, arc current, arc voltage, arc gap and carrier gas flow rate for preparation of required size spherical metal pebbles. Other parameters which affect the pebbles sizes are rotational speed, metal electrode diameter and physical properties of the metal. As beryllium is toxic in nature its surrogate metals such as stainless steel (SS) and Titanium (Ti) were selected to evaluate the performance of the REP equipment. Several experiments were carried out using SS and Ti electrode and process parameters have been optimized for preparation of pebbles of different sizes. (author)

  4. Recommended Vapor Pressure of Solid Naphthalen

    Czech Academy of Sciences Publication Activity Database

    Růžička, K.; Fulem, Michal; Růžička, V.

    2005-01-01

    Roč. 50, - (2005), s. 1956-1970 ISSN 0021-9568 Institutional research plan: CEZ:AV0Z10100521 Keywords : solid naphthalene * vapor pressure * enthalpy of vaporization * enthalpy of fusion Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.610, year: 2005

  5. 40 CFR 796.1950 - Vapor pressure.

    Science.gov (United States)

    2010-07-01

    ... (CONTINUED) CHEMICAL FATE TESTING GUIDELINES Physical and Chemical Properties § 796.1950 Vapor pressure. (a.... In addition, chemicals that are likely to be gases at ambient temperatures and which have low water... gases until the measured vapor pressure is constant, a process called “degassing.” Impurities more...

  6. The large-area CdTe thin film for CdS/CdTe solar cell prepared by physical vapor deposition in medium pressure

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Run; Liu, Bo; Yang, Xiaoyan; Bao, Zheng; Li, Bing, E-mail: libing70@126.com; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-01-01

    Graphical abstract: - Highlights: • The large-area CdTe film has been prepared by PVD under the pressure of 0.9 kPa. • The as-prepared CdTe thin film processes excellent photovoltaic properties. • This technique is suitable for depositing large-area CdTe thin film. • The 14.6% champion efficiency CdS/CdTe cell has been achieved. - Abstract: The Cadmium telluride (CdTe) thin film has been prepared by physical vapor deposition (PVD), the Ar + O{sub 2} pressure is about 0.9 kPa. This method is a newer technique to deposit CdTe thin film in large area, and the size of the film is 30 × 40 cm{sup 2}. This method is much different from the close-spaced sublimation (CSS), as the relevance between the source temperature and the substrate temperature is weak, and the gas phase of CdTe is transferred to the substrate by Ar + O{sub 2} flow. Through this method, the compact and uniform CdTe film (30 × 40 cm{sup 2}) has been achieved, and the performances of the CdTe thin film have been determined by transmission spectrum, SEM and XRD. The film is observed to be compact with a good crystallinity, the CdTe is polycrystalline with a cubic structure and a strongly preferred (1 1 1) orientation. Using the CdTe thin film (3 × 5 cm{sup 2}) which is taken from the deposited large-area film, the 14.6% efficiency CdS/CdTe thin film solar cell has been prepared successfully. The structure of the cell is glass/FTO/CdS/CdTe/graphite slurry/Au, short circuit current density (J{sub sc}) of the cell is 26.9 mA/cm{sup 2}, open circuit voltage (V{sub oc}) is 823 mV, and filling factor (FF) is 66.05%. This technique can be a quite promising method to apply in the industrial production, as it has great prospects in the fabricating of large-area CdTe film.

  7. Thermal plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Heberlein, J.; Pfender, E.

    1993-01-01

    Thermal plasmas, with temperatures up to and even exceeding 10 4 K, are capable of producing high density vapor phase precursors for the deposition of relatively thick films. Although this technology is still in its infancy, it will fill the void between the relatively slow deposition processes such as physical vapor deposition and the high rate thermal spray deposition processes. In this chapter, the present state-of-the-art of this field is reviewed with emphasis on the various types of reactors proposed for this emerging technology. Only applications which attracted particular attention, namely diamond and high T c superconducting film deposition, are discussed in greater detail. (orig.)

  8. Physical property, phase equilibrium, distillation. Measurement and prediction of vapor-liquid and liquid-liquid equilibria; Bussei / heiko / joryu. Kieki, ekieki heiko no sokutei to suisan

    Energy Technology Data Exchange (ETDEWEB)

    Tochigi, K. [Nihon Univ., Tokyo (Japan)

    1998-08-05

    The data on vapor-liquid equilibrium are basic data indispensable to the designing of a distillation process. The stage required for separation depends greatly upon the x-y curve, and the existence/nonexistence of an azeotropic point is also an important item to be checked. This paper describes the measurement of vapor-liquid equilibrium and liquid-liquid equilibrium, and then introduces reliable data on vapor-liquid equilibrium and parameters of an activity coefficient formula. For the prediction of vapor-liquid equilibrium, the ASOG, UNIFAC, and modified NIFAC, all being group contributive methods are utilized. The differences between these group contributive methods are based on the differences between the contributive items based on the differences in size of molecules influencing the activity coefficients and the expression of the group activity coefficient formula. The applicable number of groups of the ASOG is 43, while that of groups of the UNIFAC is 50. The modified UNIFAC covers 43 groups. The prediction of liquid-liquid equilibrium by using a group contributive method has little progressed since the of the results of the study of Magnussen et al. using the UNIFAC. 12 refs., 8 figs., 1 tab.

  9. On the relation between the ratio of energy of vaporization to activation energy for flow and physical properties of liquid metals

    International Nuclear Information System (INIS)

    Dutt, N.V.K.; Ravikumar, Y.V.L.; Prasad, D.H.L.

    1993-01-01

    A relation between the ratio of energy of vaporization (Esub(vap) to the activation energy for flow (Esub(vis)) and the ratio of melting point (T m ) to the critical temperature (T c ) has been developed for liquid metals, and is shown to be superior to the examinations from Eyring theory. (author). 12 refs

  10. Plasma Assisted Combustion

    Science.gov (United States)

    2007-02-28

    Tracking an individual streamer branch among others in a pulsed induced discharge J. Phys. D: Appl. Phys. 35 2823--9 [29] van Veldhuizen E M and Rutgers...2005) AIAA–2005–0405. [99] E.M. Van Veldhuizen (ed) Electrical Discharges for Environmental Purposes: Fun- damentals and Applications (New York: Nova...Vandooren J, Van Tiggelen P J 1977 Reaction Mechanism and Rate Constants in Lean Hydrogen–Nitrous Oxide Flames Combust. Flame 28 165 [201] Dean A M, Steiner

  11. Recommended vapor pressures for thiophene, sulfolane, and dimethyl sulfoxide

    Czech Academy of Sciences Publication Activity Database

    Fulem, Michal; Růžička, K.; Růžička, M.

    2011-01-01

    Roč. 303, č. 2 (2011), s. 205-216 ISSN 0378-3812 Institutional research plan: CEZ:AV0Z10100521 Keywords : thiophene sulfolane * dimethyl sulfoxide * vapor pressure * heat capacity * vaporization enthalpy * recommended vapor pressure equation Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.139, year: 2011

  12. Comparison of the growth kinetics of In{sub 2}O{sub 3} and Ga{sub 2}O{sub 3} and their suboxide desorption during plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Vogt, Patrick, E-mail: vogt@pdi-berlin.de; Bierwagen, Oliver, E-mail: bierwagen@pdi-berlin.de [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin (Germany)

    2016-08-08

    We present a comprehensive study of the In{sub 2}O{sub 3} growth kinetics during plasma-assisted molecular beam epitaxy and compare it to that of the related oxide Ga{sub 2}O{sub 3} [P. Vogt and O. Bierwagen, Appl. Phys. Lett. 108, 072101 (2016)]. The growth rate and desorbing fluxes were measured during growth in-situ by a laser reflectometry set-up and line-of-sight quadrupole mass spectrometer, respectively. We extracted the In incorporation as a function of the provided In flux, different growth temperatures T{sub G}, and In-to-O flux ratios r. The data are discussed in terms of the competing formation of In{sub 2}O{sub 3} and desorption of the suboxide In{sub 2}O and O. The same three growth regimes as in the case of Ga{sub 2}O{sub 3} can be distinguished: (i) In-transport limited, O-rich (ii) In{sub 2}O-desorption limited, O-rich, and (iii) O-transport limited, In-rich. In regime (iii), In droplets are formed on the growth surface at low T{sub G}. The growth kinetics follows qualitatively that of Ga{sub 2}O{sub 3} in agreement with their common oxide and suboxide stoichiometry. The quantitative differences are mainly rationalized by the difference in In{sub 2}O and Ga{sub 2}O desorption rates and vapor pressures. For the In{sub 2}O, Ga{sub 2}O, and O desorption, we extracted the activation energies and frequency factors by means of Arrhenius-plots.

  13. Process-structure-property relationships of micron thick gadolinium oxide films deposited by reactive electron beam-physical vapor deposition (EB-PVD)

    Science.gov (United States)

    Grave, Daniel A.

    Gadolinium oxide (Gd2O3) is an attractive material for solid state neutron detection due to gadolinium's high thermal neutron capture cross section. Development of neutron detectors based on Gd2 O3 requires sufficiently thick films to ensure neutron absorption. In this dissertation work, the process-structure-property relationships of micron thick Gd2O3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD) were studied. Through a systematic design of experiments, fundamental studies were conducted to determine the effects of processing conditions such as deposition temperature, oxygen flow rate, deposition rate, and substrate material on Gd2O3 film crystallographic phase, texture, morphology, grain size, density, and surface roughness. Films deposited at high rates (> 5 A/s) were examined via x-ray diffraction (XRD) and Raman spectroscopy. Quantitative phase volume calculations were performed via a Rietveld refinement technique. All films deposited at high rates were found to be fully monoclinic or mixed cubic/monoclinic phase. Generally, increased deposition temperature and increased oxygen flow resulted in increased cubic phase volume. As film thickness increased, monoclinic phase volume increased. Grazing incidence x-ray diffraction (GIXRD) depth profiling analysis showed that cubic phase was only present under large incidence angle (large penetration depth) measurements, and after a certain point, only monoclinic phase was grown. This was confirmed by transmission electron microscopy (TEM) analysis with selected area diffraction (SAD). Based on this information, a large compressive stress was hypothesized to cause the formation of the monoclinic phase and this hypothesis was confirmed by demonstrating the existence of a stress induced phase transition. An experiment was designed to introduce compressive stress into the Gd2O 3 films via ion beam assisted deposition (IBAD). This allowed for systematic increase in compressive stress while

  14. Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping

    International Nuclear Information System (INIS)

    Storm, D.F.; Katzer, D.S.; Binari, S.C.; Glaser, E.R.; Shanabrook, B.V.; Roussos, J.A.

    2002-01-01

    Beryllium doping of epitaxial GaN layers is used to reduce leakage currents through interfacial or buffer conducting layers grown by plasma-assisted molecular-beam epitaxy on SiC. Capacitance-voltage measurements of Schottky barrier test structures and dc pinch-off characteristics of unintentionally doped GaN high-electron-mobility transistors indicate that these leakage currents are localized near the GaN/AlN interface of our AlGaN/GaN/AlN device structures. Insertion of a 2000 Aa Be:GaN layer at the interface reduces these currents by three orders of magnitude

  15. The investigation of Al0.29Ga0.71N/GaN/AlN and AlN/GaN/AlN thin films grown on Si (111) by RF plasma-assisted MBE

    Science.gov (United States)

    Yusoff, Mohd Zaki Mohd; Mahyuddin, Azzafeerah; Hassan, Zainuriah; Hassan, Haslan Abu; Abdullah, Mat Johar

    2012-06-01

    Recently, gallium nitride (GaN) and its related compounds involving Al and In have attracted much attention because of their potential to be used as high-efficiency UV light emitting devices, and as high frequency and high power electronic devices. Consequently, the growth and physics of GaN-based materials have attracted remarkable scientific attention. In this work, the growth and characterization of epitaxial Al0.29Ga0.71N and AlN layers grown on Si (111) by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane as x = 0.29. For AlN/GaN/AlN sample, the maximum Raman intensity at 521.53 cm-1 is attributed to crystalline silicon. It was found that the allowed Raman optical phonon mode of GaN, the E1 (high) is clearly visible, which is located at 570.74 cm-1. Photoluminscence (PL) spectrums of both samples have shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing good crystal quality of the samples have been successfully grown on Si substrate.

  16. Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE

    International Nuclear Information System (INIS)

    Kumar, Mahesh; Bhat, Thirumaleshwara N.; Roul, Basanta; Rajpalke, Mohana K.; Kalghatgi, A.T.; Krupanidhi, S.B.

    2012-01-01

    Highlights: ► The n-type GaN layers were grown by plasma-assisted molecular beam epitaxy. ► The optical characteristics of a donor level in Si-doped GaN were studied. ► Activation energy of a Si-related donor was estimated from temperature dependent PL measurements. ► PL peak positions, FWHM of PL and activation energies are found to be proportional to the cube root of carrier density. ► The involvement of donor levels is supported by the temperature-dependent electron concentration measurements. -- Abstract: The n-type GaN layers were grown by plasma-assisted MBE and either intentionally doped with Si or unintentionally doped. The optical characteristics of a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration. Temperature dependent PL measurements allowed us to estimate the activation energy of a Si-related donor from temperature-induced decay of PL intensity. PL peak positions, full width at half maximum of PL and activation energies are found to be proportional to the cube root of carrier density. The involvement of donor levels is supported by the temperature-dependent electron concentration measurements.

  17. Fuel vapor pressure (FVAPRS)

    International Nuclear Information System (INIS)

    Mason, R.E.

    1979-04-01

    A subcode (FVAPRS) is described which calculates fuel vapor pressure. This subcode was developed as part of the fuel rod behavior modeling task performed at EG and G Idaho, Inc. The fuel vapor pressure subcode (FVAPRS), is presented and a discussion of literature data, steady state and transient fuel vapor pressure equations and estimates of the standard error of estimate to be expected with the FVAPRS subcode are included

  18. A technique to depress desflurane vapor pressure.

    Science.gov (United States)

    Brosnan, Robert J; Pypendop, Bruno H

    2006-09-01

    To determine whether the vapor pressure of desflurane could be decreased by using a solvent to reduce the anesthetic molar fraction in a solution (Raoult's Law). We hypothesized that such an anesthetic mixture could produce anesthesia using a nonprecision vaporizer instead of an agent-specific, electronically controlled, temperature and pressure compensated vaporizer currently required for desflurane administration. One healthy adult female dog. Propylene glycol was used as a solvent for desflurane, and the physical characteristics of this mixture were evaluated at various molar concentrations and temperatures. Using a circle system with a breathing bag attached at the patient end and a mechanical ventilator to simulate respiration, an in-circuit, nonprecision vaporizer containing 40% desflurane and 60% propylene glycol achieved an 11.5% +/- 1.0% circuit desflurane concentration with a 5.2 +/- 0.4 (0 = off, 10 = maximum) vaporizer setting. This experiment was repeated with a dog attached to the breathing circuit under spontaneous ventilation with a fresh gas flow of 0.5 L minute(-1). Anesthesia was maintained for over 2 hours at a mean vaporizer setting of 6.2 +/- 0.4, yielding mean inspired and end-tidal desflurane concentrations of 8.7% +/- 0.5% and 7.9% +/- 0.7%, respectively. Rather than alter physical properties of vaporizers to suit a particular anesthetic agent, this study demonstrates that it is also possible to alter physical properties of anesthetic agents to suit a particular vaporizer. However, propylene glycol may not prove an ideal solvent for desflurane because of its instability in solution and substantial-positive deviation from Raoult's Law.

  19. Importance Profiles for Water Vapor

    Science.gov (United States)

    Mapes, Brian; Chandra, Arunchandra S.; Kuang, Zhiming; Zuidema, Paquita

    2017-11-01

    Motivated by the scientific desire to align observations with quantities of physical interest, we survey how scalar importance functions depend on vertically resolved water vapor. Definitions of importance begin from familiar examples of water mass I m and TOA clear-sky outgoing longwave flux I OLR, in order to establish notation and illustrate graphically how the sensitivity profile or "kernel" depends on whether specific humidity S, relative humidity R, or ln( R) are used as measures of vapor. Then, new results on the sensitivity of convective activity I con to vapor (with implied knock-on effects such as weather prediction skill) are presented. In radiative-convective equilibrium, organized (line-like) convection is much more sensitive to moisture than scattered isotropic convection, but it exists in a drier mean state. The lesson for natural convection may be that organized convection is less susceptible to dryness and can survive and propagate into regions unfavorable for disorganized convection. This counterintuitive interpretive conclusion, with respect to the narrow numerical result behind it, highlights the importance of clarity about what is held constant at what values in sensitivity or susceptibility kernels. Finally, the sensitivities of observable radiance signals I sig for passive remote sensing are considered. While the accuracy of R in the lower free troposphere is crucial for the physical importance scalars, this layer is unfortunately the most difficult to isolate with passive remote sensing: In high emissivity channels, water vapor signals come from too high in the atmosphere (for satellites) or too low (for surface radiometers), while low emissivity channels have poor altitude discrimination and (in the case of satellites) are contaminated by surface emissions. For these reasons, active ranging (LiDAR) is the preferred observing strategy.

  20. Structural properties of In2Se3 precursor layers deposited by spray pyrolysis and physical vapor deposition for CuInSe2 thin-film solar cell applications

    International Nuclear Information System (INIS)

    Reyes-Figueroa, P.; Painchaud, T.; Lepetit, T.; Harel, S.; Arzel, L.; Yi, Junsin; Barreau, N.; Velumani, S.

    2015-01-01

    The structural properties of In 2 Se 3 precursor thin films grown by chemical spray pyrolysis (CSP) and physical vapor deposition (PVD) methods were compared. This is to investigate the feasibility to substitute PVD process of CuInSe 2 (CISe) films by CSP films as precursor layer, thus decreasing the production cost by increasing material-utilization efficiency. Both films of 1 μm thickness were deposited at the same substrate temperature of 380 °C. X-ray diffraction and Raman spectra confirm the formation of γ-In 2 Se 3 crystalline phase for both films. The PVD and CSP films exhibited (110) and (006) preferred orientations, respectively. The PVD films showed a smaller full width at half maximum value (0.09°) compared with CSP layers (0.1°). Films with the same crystalline phase but with different orientations are normally used in the preparation of high quality CISe films by 3-stage process. Scanning electron microscope cross-section images showed an important difference in grain size with well-defined larger grains of size 1–2 μm in the PVD films as compared to CSP layers (600 nm). Another important characteristic that differentiates the two precursor films is the oxygen contamination. X-ray photoelectron spectroscopy showed the presence of oxygen in CSP films. The oxygen atoms could be bonded to indium by replacing Se vacancies, which are formed during CSP deposition. Taking account of the obtained results, such CSP films can be used as precursor layer in a PVD process in order to produce CISe absorber films. - Highlights: • To find the intricacies involved in spray pyrolysis (CSP) and physical vapor (PVD) deposition. • Comparison of CSP and PVD film formations — especially in structural properties. • Feasibility to substitute CSP (cheaper) films for PVD in the manufacturing process. • Decreasing the global production cost of Cu(In,Ga)Se 2 devices in the 3-stage process

  1. Petroleum Vapor - Field Technical

    Science.gov (United States)

    The screening approach being developed by EPA OUST to evaluate petroleum vapor intrusion (PVI) requires information that has not be routinely collected in the past at vapor intrusion sites. What is the best way to collect this data? What are the relevant data quality issues and ...

  2. Perspective: Highly stable vapor-deposited glasses

    Science.gov (United States)

    Ediger, M. D.

    2017-12-01

    This article describes recent progress in understanding highly stable glasses prepared by physical vapor deposition and provides perspective on further research directions for the field. For a given molecule, vapor-deposited glasses can have higher density and lower enthalpy than any glass that can be prepared by the more traditional route of cooling a liquid, and such glasses also exhibit greatly enhanced kinetic stability. Because vapor-deposited glasses can approach the bottom of the amorphous part of the potential energy landscape, they provide insights into the properties expected for the "ideal glass." Connections between vapor-deposited glasses, liquid-cooled glasses, and deeply supercooled liquids are explored. The generality of stable glass formation for organic molecules is discussed along with the prospects for stable glasses of other types of materials.

  3. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan; Bresnahan, Rich C.

    2015-10-01

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N2 while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N2 and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 1016 to 3.8 × 1019 cm-3 were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1-2 × 1015 cm-3. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be addressed. Nonetheless, the dramatically enhanced growth rates demonstrate

  4. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Bresnahan, Rich C. [Veeco Instruments, St. Paul, Minnesota 55127 (United States)

    2015-10-21

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N{sub 2} while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N{sub 2} and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 10{sup 16} to 3.8 × 10{sup 19} cm{sup −3} were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 10{sup 15} cm{sup −3}. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be

  5. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan; Bresnahan, Rich C.

    2015-01-01

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N 2 while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N 2 and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 10 16 to 3.8 × 10 19 cm −3 were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 10 15 cm −3 . The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be addressed. Nonetheless, the

  6. Nanoporous gold synthesized by plasma-assisted inert gas condensation: room temperature sintering, nanoscale mechanical properties and stability against high energy electron irradiation

    Science.gov (United States)

    Weyrauch, S.; Wagner, C.; Suckfuell, C.; Lotnyk, A.; Knolle, W.; Gerlach, J. W.; Mayr, S. G.

    2018-02-01

    With a plasma assisted gas condensation system it is possible to achieve high-purity nanoporous Au (np-Au) structures with minimal contaminations and impurities. The structures consist of single Au-nanoparticles, which partially sintered together due to their high surface to volume ratio. Through electron microscopy investigations a porosity  >50% with ligament sizes between 20-30 nm was revealed. The elastic modulus of the np-Au was determined via peak force quantitative nanomechanical mapping and resulted in values of 7.5  ±  1.5 GPa. The presented structures partially sintered at room temperature, but proved to be stable to electron irradiation with energies of 7 MeV up to doses of 100 MGy. The electron irradiation stability opens the venue for electron assisted functionalization with biomolecules.

  7. Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Shuo-Ting You

    2015-12-01

    Full Text Available We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface ( 10 1 ̄ 0 by scanning transmission electron microscope, we found that the ZnGa2O4 compound was formed at the M-plane hetero-interface, which was confirmed by polarization-dependent photoluminescence. We demonstrated that the M-plane ZnO micro-rod surface can be used as an alternative substrate to grow high quality M-plane GaN epi-layers.

  8. Characterization of GaN P-N Junction Grown on Si (111) Substrate by Plasma-assisted Molecular Beam Epitaxy

    International Nuclear Information System (INIS)

    Rosfariza Radzali; Rosfariza Radzali; Mohd Anas Ahmad; Zainuriah Hassan; Norzaini Zainal; Kwong, Y.F.; Woei, C.C.; Mohd Zaki Mohd Yusoff; Mohd Zaki Mohd Yusoff

    2011-01-01

    In this report, the growth of GaN pn junction on Si (111) substrate by plasma assisted molecular beam epitaxy (PAMBE) is presented. Doping of GaN p-n junction has been carried out using Si and Mg as n-type dopant and p-type dopants, respectively. The sample had been characterized by PL, Raman spectroscopy, HR-XRD and SEM. PL spectrum showed strong band edge emission of GaN at ∼364 nm, indicating good quality of the sample. The image of SEM cross section of the sample showed sharp interfaces. The presence of peak ∼657 cm -1 in Raman measurement exhibited successful doping of Mg in the sample. (author)

  9. Structural, optical, and hydrogenation properties of ZnO nanowall networks grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Su, S.C.; Lu, Y.M.; Zhang, Z.Z.; Li, B.H.; Shen, D.Z.; Yao, B.; Zhang, J.Y.; Zhao, D.X.; Fan, X.W.

    2008-01-01

    ZnO nanowall networks were grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (P-MBE) without using catalysts. Scanning electronic microscopy (FE-SEM) confirmed the formation of nanowalls with a thickness of about 10-20 nm. X-ray diffraction (XRD) showed that the ZnO nanowall networks were crystallized in a wurtzite structure with their height parallel to the direction. Photoluminescence (PL) of the ZnO nanowall networks exhibited free excitons (FEs), donor-bound exciton (D 0 X), donor-acceptor pair (DAP), and free exciton to acceptor (FA) emissions. The growth mechanism of the ZnO nanowall networks was discussed, and their hydrogenation was also studied

  10. Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

    Science.gov (United States)

    Agrawal, M.; Ravikiran, L.; Dharmarasu, N.; Radhakrishnan, K.; Karthikeyan, G. S.; Zheng, Y.

    2017-01-01

    The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE) has been studied. AlN nucleation layer and GaN layer were grown as a function of III/V ratio. GaN/AlN structure is found to form buried cracks when AlN is grown in the intermediate growth regime(III/V˜1)and GaN is grown under N-rich growth regime (III/VHEMT) heterostructure was demonstrated on 2-inch SiC that showed good two dimensional electron gas (2DEG) properties with a sheet resistance of 480 Ω/sq, mobility of 1280 cm2/V.s and sheet carrier density of 1×1013 cm-2.

  11. Investigation of the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Bourlange, A.; Payne, D.J.; Palgrave, R.G.; Foord, J.S.; Egdell, R.G.; Jacobs, R.M.J.; Schertel, A.; Hutchison, J.L.; Dobson, P.J.

    2009-01-01

    Thin films of In 2 O 3 have been grown on Y-stabilised ZrO 2 (100) substrates by oxygen plasma assisted molecular beam epitaxy over a range of substrate temperatures between 650 o C and 900 o C. Growth at 650 o C leads to continuous but granular films and complete extinction of substrate core level structure in X-ray photoelectron spectroscopy. However with increasing substrate temperature the films break up into a series of discrete micrometer sized islands. Both the continuous and the island films have excellent epitaxial relationship with the substrate as gauged by X-ray diffraction and selected area electron diffraction and lattice imaging in high resolution transmission electron microscopy.

  12. Growth of a New Ternary BON Crystal on Si(100) by Plasma-Assisted MOCVD and Study on the Effects of Fed Gas and Growth Temperature

    Science.gov (United States)

    Chen, G. C.; Lee, S.-B.; Boo, J.-H.

    A new ternary BOxNy crystal was grown on Si(100) substrate at 500°C by low-frequency (100 kHz) radio-frequency (rf) derived plasma-assisted MOCVD with an organoborate precursor. The as-grown deposits were characterized by SEM, TED, XPS, XRD, AFM and FT-IR. The experimental results showed that BOxNy crystal was apt to be formed at N-rich atmosphere and high temperature. The decrease of hydrogen flux in fed gases was of benefit to form BON crystal structure. The crystal structure of BOxNy was as similar to that of H3BO3 in this study.

  13. Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures

    International Nuclear Information System (INIS)

    Yang, W. C.; Wu, C. H.; Tseng, Y. T.; Chiu, S. Y.; Cheng, K. Y.

    2015-01-01

    The results of the growth of thin (∼3 nm) InGaN/GaN single quantum wells (SQWs) with emission wavelengths in the green region by plasma-assisted molecular beam epitaxy are present. An improved two-step growth method using a high growth temperature up to 650 °C is developed to increase the In content of the InGaN SQW to 30% while maintaining a strong luminescence intensity near a wavelength of 506 nm. The indium composition in InGaN/GaN SQW grown under group-III-rich condition increases with increasing growth temperature following the growth model of liquid phase epitaxy. Further increase in the growth temperature to 670 °C does not improve the photoluminescence property of the material due to rapid loss of indium from the surface and, under certain growth conditions, the onset of phase separation

  14. Step-flow anisotropy of the m-plane GaN (1100) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Sawicka, Marta; Siekacz, Marcin; Skierbiszewski, Czeslaw; Turski, Henryk; Krysko, Marcin; DziePcielewski, Igor; Grzegory, Izabella; Smalc-Koziorowska, Julita

    2011-01-01

    The homoepitaxial growth of m-plane (1100) GaN was investigated by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions. The surface morphologies as a function of sample miscut were studied, providing evidence for a strong growth anisotropy that is a consequence of the anisotropy of Ga adatom diffusion barriers on the m-plane surface recently calculated ab initio[Lymperakis and Neugebauer, Phys. Rev. B 79, 241308(R) (2009)]. We found that substrate miscut toward [0001] implies a step flow toward while substrate miscut toward [0001] causes formation of atomic steps either perpendicular or parallel to the [0001] direction, under N-rich conditions at 730 deg C. We describe the growth conditions for achieving atomically flat m-plane GaN layers with parallel atomic steps.

  15. Plasma assisted fabrication of multi-layer graphene/nickel hybrid film as enhanced micro-supercapacitor electrodes

    Science.gov (United States)

    Ding, Q.; Li, W. L.; Zhao, W. L.; Wang, J. Y.; Xing, Y. P.; Li, X.; Xue, T.; Qi, W.; Zhang, K. L.; Yang, Z. C.; Zhao, J. S.

    2017-03-01

    A facile synthesis strategy has been developed for fabricating multi-layer graphene/nickel hybrid film as micro-supercapacitor electrodes by using plasma enhanced chemical vapor deposition. The as-presented method is advantageous for rapid graphene growth at relatively low temperature of 650 °C. In addition, after pre-treating for the as-deposited nickel film by using argon plasma bombardment, the surface-to-volume ratio of graphene film on the treated nickel substrate is effectively increased by the increasing of surface roughness. This is demonstrated by the characterization results from transmission electron microscopy, scanning electron microscope and atomic force microscopy. Moreover, the electrochemical performance of the resultant graphene/nickel hybrid film as micro-supercapacitor working electrode was investigated by cyclic voltammetry and galvanostatic charge/discharge measurements. It was found that the increase of the surface-to-volume ratio of graphene/nickel hybrid film improved the specific capacitance of 10 times as the working electrode of micro-supercapacitor. Finally, by using comb columnar shadow mask pattern, the micro-supercapacitor full cell device was fabricated. The electrochemical performance measurements of the micro-supercapacitor devices indicate that the method presented in this study provides an effective way to fabricate micro-supercapacitor device with enhanced energy storage property.

  16. Evaluation of mechanism of cold atmospheric pressure plasma assisted polymerization of acrylic acid on low density polyethylene (LDPE) film surfaces: Influence of various gaseous plasma pretreatment

    Science.gov (United States)

    Ramkumar, M. C.; Pandiyaraj, K. Navaneetha; Arun Kumar, A.; Padmanabhan, P. V. A.; Uday Kumar, S.; Gopinath, P.; Bendavid, A.; Cools, P.; De Geyter, N.; Morent, R.; Deshmukh, R. R.

    2018-05-01

    Owing to its exceptional physiochemical properties, low density poly ethylene (LDPE) has wide range of tissue engineering applications. Conversely, its inadequate surface properties make LDPE an ineffectual candidate for cell compatible applications. Consequently, plasma-assisted polymerization with a selected precursor is a good choice for enhancing its biocompatibility. The present investigation studies the efficiency of plasma polymerization of acrylic acid (AAC) on various gaseous plasma pretreated LDPE films by cold atmospheric pressure plasma, to enhance its cytocompatibility. The change in chemical composition and surface topography of various gaseous plasma pretreated and acrylic deposited LDPE films has been assessed by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The changes in hydrophilic nature of surface modified LDPE films were studied by contact angle (CA) analysis. Cytocompatibility of the AAC/LDPE films was also studied in vitro, using RIN-5F cells. The results acquired by the XPS and AFM analysis clearly proved that cold atmospheric pressure (CAP) plasma assisted polymerization of AAC enhances various surface properties including carboxylic acid functional group density and increased surface roughness on various gaseous plasma treated AAC/LDPE film surfaces. Moreover, contact angle analysis clearly showed that the plasma polymerized samples were hydrophilic in nature. In vitro cytocompatibility analysis undoubtedly validates that the AAC polymerized various plasma pretreated LDPE films surfaces stimulate cell distribution and proliferation compared to pristine LDPE films. Similarly, cytotoxicity analysis indicates that the AAC deposited various gaseous plasma pretreated LDPE film can be considered as non-toxic as well as stimulating cell viability significantly. The cytocompatible properties of AAC polymerized Ar + O2 plasma pretreated LDPE films were found to be more pronounced compared to the other plasma pretreated

  17. Physical and photoelectrochemical properties of Sb-doped SnO2 thin films deposited by chemical vapor deposition: application to chromate reduction under solar light

    Science.gov (United States)

    Outemzabet, R.; Doulache, M.; Trari, M.

    2015-05-01

    Sb-doped SnO2 thin films (Sb-SnO2) are prepared by chemical vapor deposition. The X-ray diffraction indicates a rutile phase, and the SEM analysis shows pyramidal grains whose size extends up to 200 nm. The variation of the film thickness shows that the elaboration technique needs to be optimized to give reproducible layers. The films are transparent over the visible region. The dispersion of the optical indices is evaluated by fitting the diffuse reflectance data with the Drude-Lorentz model. The refractive index ( n) and absorption coefficient ( k) depend on both the conditions of preparation and of the doping concentration and vary between 1.4 and 2.0 and 0.2 and 0.01, respectively. Tin oxide is nominally non-stoichiometric, and the conduction is dominated by thermally electrons jump with an electron mobility of 12 cm2 V-1 s-1 for Sb-SnO2 (1 %). The ( C 2- V) characteristic in aqueous electrolyte exhibits a linear behavior from which an electrons density of 4.15 × 1018 cm-3 and a flat-band potential of -0.83 V SCE are determined. The electrochemical impedance spectroscopy shows a semicircle attributed to a capacitive behavior with a low density of surface states. The center lies below the real axis with a depletion angle (12°), due to a constant phase element, i.e., a deviation from a pure capacitive behavior, presumably attributed to the roughness and porosity of the film. The straight line at low frequencies is attributed to the Warburg diffusion. The energy diagram reveals the photocatalytic feasibility of Sb-SnO2. As application, 90 % of the chromate concentration (20 mg L-1, pH ~3) disappears after 6 h of exposure to solar light.

  18. Piezoelectric trace vapor calibrator

    International Nuclear Information System (INIS)

    Verkouteren, R. Michael; Gillen, Greg; Taylor, David W.

    2006-01-01

    The design and performance of a vapor generator for calibration and testing of trace chemical sensors are described. The device utilizes piezoelectric ink-jet nozzles to dispense and vaporize precisely known amounts of analyte solutions as monodisperse droplets onto a hot ceramic surface, where the generated vapors are mixed with air before exiting the device. Injected droplets are monitored by microscope with strobed illumination, and the reproducibility of droplet volumes is optimized by adjustment of piezoelectric wave form parameters. Complete vaporization of the droplets occurs only across a 10 deg. C window within the transition boiling regime of the solvent, and the minimum and maximum rates of trace analyte that may be injected and evaporated are determined by thermodynamic principles and empirical observations of droplet formation and stability. By varying solution concentrations, droplet injection rates, air flow, and the number of active nozzles, the system is designed to deliver--on demand--continuous vapor concentrations across more than six orders of magnitude (nominally 290 fg/l to 1.05 μg/l). Vapor pulses containing femtogram to microgram quantities of analyte may also be generated. Calibrated ranges of three explosive vapors at ng/l levels were generated by the device and directly measured by ion mobility spectrometry (IMS). These data demonstrate expected linear trends within the limited working range of the IMS detector and also exhibit subtle nonlinear behavior from the IMS measurement process

  19. Improvements to vapor generators

    International Nuclear Information System (INIS)

    Keller, Arthur; Monroe, Neil.

    1976-01-01

    A supporting system is proposed for vapor generators of the 'supported' type. Said supporting system is intended to compensate the disparities of thermal expansion due to the differences in the vertical dimensions of the tubes in the walls of the combustion chamber and their collectors compared to that of the balloon tanks and the connecting tube clusters of vaporization, the first one being longer than the second ones. Said system makes it possible to build said combustion chamber higher than the balloon tanks and the tube clusters of vaporization. The capacity of steam production is thus enhanced [fr

  20. Gasoline Reid Vapor Pressure

    Science.gov (United States)

    EPA regulates the vapor pressure of gasoline sold at retail stations during the summer ozone season to reduce evaporative emissions from gasoline that contribute to ground-level ozone and diminish the effects of ozone-related health problems.

  1. Vapor pressures of dimethylcadmium, trimethylbismuth, and tris(dimethylamino)antimony

    Czech Academy of Sciences Publication Activity Database

    Morávek, Pavel; Fulem, Michal; Pangrác, Jiří; Hulicius, Eduard; Růžička, K.

    2013-01-01

    Roč. 360, Dec (2013), s. 106-110 ISSN 0378-3812 R&D Projects: GA ČR GA13-15286S; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : vapor pressure * dimethylcadmium * trimethylbismuth * tris(dimethylamino)antimony * sublimation and vaporization enthalpy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.241, year: 2013

  2. A demonstration experiment for studying the properties of saturated vapor

    Science.gov (United States)

    Grebenev, Igor V.; Lebedeva, Olga V.; Polushkina, Svetlana V.

    2017-11-01

    The paper proposes an important demonstration experiment that can be used at secondary schools in physics. The described experiment helps students learn the main concepts of the topic ‘saturated vapor’, namely, evaporation, condensation, dynamic equilibrium, saturation vapor, partial pressure, and the dependence of saturated vapor pressure on temperature.

  3. R-22 vapor explosions

    International Nuclear Information System (INIS)

    Anderson, R.P.; Armstrong, D.R.

    1977-01-01

    Previous experimental and theoretical studies of R-22 vapor explosions are reviewed. Results from two experimental investigations of vapor explosions in a medium scale R-22/water system are reported. Measurements following the drop of an unrestrained mass of R-22 into a water tank demonstrated the existence of two types of interaction behavior. Release of a constrained mass of R-22 beneath the surface of a water tank improved the visual resolution of the system thus allowing identification of two interaction mechansims: at low water temperatures, R-22/water contact would produce immediate violent boiling; at high water temperatures a vapor film formed around its R-22 as it was released, explosions were generated by a surface wave which initiated at a single location and propagated along the vapor film as a shock wave. A new vapor explosion model is proposed, it suggests explosions are the result of a sequence of three independent steps: an initial mixing phase, a trigger and growth phase, and a mature phase where a propagating shock wave accelerates the two liquids into a collapsing vapor layer causing a high velocity impact which finely fragments and intermixes the two liquids

  4. Atomic-vapor-laser isotope separation

    International Nuclear Information System (INIS)

    Davis, J.I.

    1982-10-01

    This paper gives a brief history of the scientific considerations leading to the development of laser isotope separation (LIS) processes. The close relationship of LIS to the broader field of laser-induced chemical processes is evaluated in terms of physical criteria to achieve an efficient production process. Atomic-vapor LIS processes under development at Livermore are reviwed. 8 figures

  5. Vapor pressure of selected organic iodides

    Czech Academy of Sciences Publication Activity Database

    Fulem, M.; Růžička, K.; Morávek, P.; Pangrác, Jiří; Hulicius, Eduard; Kozyrkin, B.; Shatunov, V.

    2010-01-01

    Roč. 55, č. 11 (2010), 4780-4784 ISSN 0021-9568 R&D Projects: GA ČR GA203/08/0217 Institutional research plan: CEZ:AV0Z10100521 Keywords : vapor pressure * static method * organic iodides Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.089, year : 2010

  6. High performance LiNi0.5Mn1.5O4 cathode by Al-coating and Al3+-doping through a physical vapor deposition method

    International Nuclear Information System (INIS)

    Sun, Peng; Ma, Ying; Zhai, Tianyou; Li, Huiqiao

    2016-01-01

    Highlights: • Metal Al was used as an electrical conductive coating material for LiNi 0.5 Mn 1.5 O 4 . • The uniform surface coating layer of metal Al was successfully achieved with adjusted thickness through a physical vapor deposition technology. • Al 3+ -doped LiNi 0.5 Mn 1.5 O 4 can be easily obtained by further directly annealing of Al-coated LiNi 0.5 Mn 1.5 O 4 in air. • The conductive Al-coating layer can greatly improve the rate performance and cycle stability of LiNi 0.5 Mn 1.5 O 4 . - Abstract: In this work, spinel LiNi 0.5 Mn 1.5 O 4 (LNMO) hollow microspheres are synthesized by an impregnation method using microsphere MnO 2 as both the precursor and template. To enhance the electrical conductivity of LNMO, metal Al was employed for the first time as a coating material for LNMO. Though an Electron-beam Vapor Deposition approach, the surface of LNMO can be easily coated by a tight layer of Al nanoparticles with adjusted thickness. Further annealing the Al-coated sample at 800 °C in air, the Al 3+ -doped LNMO can be obtained. The effects of Al-coating and Al 3+ -doping on the sample morphology and structure are investigated by SEM, TEM, XRD and FT-IR. The electrochemical properties of Al-coated LNMO and Al 3+ -doped LNMO are measured with comparison of bare LNMO by charge/discharge tests and electrochemical impedance spectroscopy (EIS). The results show that both Al-coating and Al 3+ -doping can greatly enhance the cycle performance and rate capability of LNMO. Especially for Al-coated LNMO, it shows the lowest battery impedance due to the existence of conductive Al coating layer, thus delivers the best rate performance among the three. The physical coating procedure used in this work may provide a new facile modification approach for other cathode materials.

  7. Atomic vapor laser isotope separation

    International Nuclear Information System (INIS)

    Stern, R.C.; Paisner, J.A.

    1985-01-01

    Atomic vapor laser isotope separation (AVLIS) is a general and powerful technique. A major present application to the enrichment of uranium for light-water power reactor fuel has been under development for over 10 years. In June 1985 the Department of Energy announced the selection of AVLIS as the technology to meet the nation's future need for the internationally competitive production of uranium separative work. The economic basis for this decision is considered, with an indicated of the constraints placed on the process figures of merit and the process laser system. We then trace an atom through a generic AVLIS separator and give examples of the physical steps encountered, the models used to describe the process physics, the fundamental parameters involved, and the role of diagnostic laser measurements

  8. Crystalline phase control and growth selectivity of β-MnO{sub 2} thin films by remote plasma assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Abi-Akl, M.; Tabbal, M., E-mail: malek.tabbal@aub.edu.lb; Kassem, W.

    2016-08-01

    In this paper, we exploit the effect of coupling an oxygen remote plasma source to Pulsed Laser Deposition (PLD) for the growth of pure and well crystallized β-MnO{sub 2} films. Films were grown on Si substrates by laser ablation of a MnO target in oxygen ambient and remote plasma. X-Ray Diffraction, Fourier Transform Infra-Red spectroscopy and Raman scattering were used to determine the crystalline structure and bonding in the grown layers, whereas Atomic Force Microscopy was used to study their morphology and surface roughness. Deposition at 500 °C and high oxygen pressure (33.3–66.6 Pa) resulted in the formation of films with roughness of 12 nm consisting of nsutite γ-MnO{sub 2}, a structure characterized by the intergrowth of the pyrolusite β-MnO{sub 2} in a ramsdellite R-MnO{sub 2} matrix. Deposition at the same temperature but low pressure (1.33–3.33 Pa) in oxygen ambient lead to the formation of Mn{sub 2}O{sub 3} whereas plasma activation within the same pressure range induced the growth of single phase highly crystalline β-MnO{sub 2} having smooth surfaces with a roughness value of 0.6 nm. Such results underline the capability of remote plasma assisted PLD in selecting and controlling the crystalline phase of manganese oxide layers. - Highlights: • MnO{sub 2} films were grown by Remote Plasma Assisted Pulsed Laser Deposition. • Crystalline MnO{sub 2} is formed at a substrate temperature of 500 °C. • Smooth crystalline single phase β-MnO{sub 2} films were obtained at 1.33–3.33 Pa. • Deposition at 1.33–3.33 Pa without plasma activation lead to the growth of Mn{sub 2}O{sub 3}. • Without plasma, mixed phases of MnO{sub 2} polymorphs are obtained at 33.3 Pa and above.

  9. Detection of water vapor on Jupiter

    Science.gov (United States)

    Larson, H. P.; Fink, U.; Treffers, R.; Gautier, T. N., III

    1975-01-01

    High-altitude (12.4 km) spectroscopic observations of Jupiter at 5 microns from the NASA 91.5 cm airborne infrared telescope have revealed 14 absorptions assigned to the rotation-vibration spectrum of water vapor. Preliminary analysis indicates a mixing ratio about 1 millionth for the vapor phase of water. Estimates of temperature (greater than about 300 K) and pressure (less than 20 atm) suggest observation of water deep in Jupiter's hot spots responsible for its 5 micron flux. Model-atmosphere calculations based on radiative-transfer theory may change these initial estimates and provide a better physical picture of Jupiter's atmosphere below the visible cloud tops.

  10. Synthesis of chiral polyaniline films via chemical vapor phase polymerization

    DEFF Research Database (Denmark)

    Chen, J.; Winther-Jensen, B.; Pornputtkul, Y.

    2006-01-01

    Electrically and optically active polyaniline films doped with (1)-(-)-10- camphorsulfonic acid were successfully deposited on nonconductive substrates via chemical vapor phase polymerization. The above polyaniline/ R- camphorsulfonate films were characterized by electrochemical and physical...

  11. Vapor pressures and enthalpies of vaporization of azides

    International Nuclear Information System (INIS)

    Verevkin, Sergey P.; Emel'yanenko, Vladimir N.; Algarra, Manuel; Manuel Lopez-Romero, J.; Aguiar, Fabio; Enrique Rodriguez-Borges, J.; Esteves da Silva, Joaquim C.G.

    2011-01-01

    Highlights: → We prepared and measured vapor pressures and vaporization enthalpies of 7 azides. → We examined consistency of new and available in the literature data. → Data for geminal azides and azido-alkanes selected for thermochemical calculations. - Abstract: Vapor pressures of some azides have been determined by the transpiration method. The molar enthalpies of vaporization Δ l g H m of these compounds were derived from the temperature dependencies of vapor pressures. The measured data sets were successfully checked for internal consistency by comparison with vaporization enthalpies of similarly structured compounds.

  12. Toxic vapor concentrations in the control room following a postulated accidental release

    International Nuclear Information System (INIS)

    Wing, J.

    1979-05-01

    An acceptable method is presented for calculating the vapor concentrations in a control room as a function of time after a postulated accidental release. Included are the mathematical formulas for computing the rates of vaporization and evaporation of liquid spills, the vapor dispersion in air, and the control room air exchange. A list of toxic chemicals and their physical properties is also given

  13. Schottky barrier height of Ni to β-(AlxGa1-x)2O3 with different compositions grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Ahmadi, Elaheh; Oshima, Yuichi; Wu, Feng; Speck, James S.

    2017-03-01

    Coherent β-(AlxGa1-x)2O3 films (x = 0, 0.038, 0.084, 0.164) were grown successfully on a Sn-doped β-Ga2O3 (010) substrate using plasma-assisted molecular beam epitaxy. Atom probe tomography, transmission electron microscopy, and high resolution x-ray diffraction were used to verify the alloy composition and high quality of the films. Schottky diodes were then fabricated using Ni as the Schottky metal. Capacitance-voltage measurements revealed a very low (current-voltage (I-V) measurements performed at temperatures varying from 300 K to 500 K on the Schottky diodes. These measurements revealed that the apparent Schottky barrier height could have similar values for different compositions of β-(AlxGa1-x)2O3. We believe this is attributed to the lateral fluctuation in the alloy’s composition. This results in a lateral variation in the barrier height. Therefore, the average Schottky barrier height extracted from I-V measurements could be similar for β-(AlxGa1-x)2O3 films with different compositions.

  14. On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy

    KAUST Repository

    Mishra, Pawan; Janjua, Bilal; Ng, Tien Khee; Anjum, Dalaver H.; Elafandy, Rami T.; Prabaswara, Aditya; Shen, Chao; Salhi, Abdelmajid; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2016-01-01

    In this paper, c-plane stepped- and graded- InGaN/GaN multiple quantum wells (MQWs) are grown using plasma assisted molecular beam epitaxy (PAMBE) by in situ surface stoichiometry monitoring (i-SSM). Such a technique considerably reduces the strain build-up due to indium clustering within and across graded-MQWs; especially for QW closer to the top which results in mitigation of the quantum-confined Stark effect (QCSE). This is validated by a reduced power dependent photoluminescence blueshift of 10 meV in graded-MQWs as compared to a blueshift of 17 meV for stepped-MQWs. We further analyze microstrain within the MQWs, using Raman spectroscopy and geometrical phase analysis (GPA) on high-angle annular dark-field (HAADF)-scanning transmission electron microscope (STEM) images of stepped- and graded-MQWs, highlighting the reduction of ~1% strain in graded-MQWs over stepped-MQWs. Our analysis provides direct evidence of the advantage of graded-MQWs for the commercially viable c-plane light-emitting and laser diodes. © 2016 Optical Society of America.

  15. Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

    Science.gov (United States)

    Chèze, C.; Feix, F.; Lähnemann, J.; Flissikowski, T.; Kryśko, M.; Wolny, P.; Turski, H.; Skierbiszewski, C.; Brandt, O.

    2018-01-01

    Previously, we found that N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C . This exceptionally high temperature results in a vanishing In incorporation for the Ga-polar sample. In contrast, quantum wells with an In content of 20% and abrupt interfaces are formed on N-polar GaN. Moreover, these quantum wells exhibit a spatially uniform green luminescence band up to room temperature, but the intensity of this band is observed to strongly quench with temperature. Temperature-dependent photoluminescence transients show that this thermal quenching is related to a high density of nonradiative Shockley-Read-Hall centers with large capture coefficients for electrons and holes.

  16. Properties of InSbN grown on GaAs by radio frequency nitrogen plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lim, K P; Yoon, S F; Pham, H T

    2009-01-01

    We report the growth of InSbN on a lattice-mismatched GaAs substrate using radio frequency nitrogen plasma-assisted molecular beam epitaxy. The effects of a two-step thin InSb buffer layer grown at 330 and 380 deg. C and substrate temperature (270-380 deg. C) on the properties of the InSbN are studied. The crystalline quality of the InSbN is significantly improved by the two-step buffer layer due to defect suppression. The shifting in the absorption edge of the InSbN from ∼5 to 8 μm following an increase in the substrate temperature is correlated with the reduction in free carrier concentration from ∼10 18 to 10 16 cm -3 and increase in concentration of N substituting Sb from ∼0.2 to 1%. These results will be beneficial to those working on the pseudo-monolithic integration of InSbN detectors on a GaAs platform.

  17. Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

    International Nuclear Information System (INIS)

    Sui Yan-Ping; Yu Guang-Hui

    2011-01-01

    We investigate undoped GaN and Mg-doped GaN grown by rf plasma-assisted molecular beam epitaxy (MBE) with different Mg concentrations by photoluminescence (PL) at low temperature, Hall-effect and XRD measurements. In the PL spectra of lightly Mg-doped GaN films, a low intensity near band edge (NBE) emission and strong donor-acceptor pair (DAP) emission with its phonon replicas are observed. As the Mg concentration is increased, the DAP and NBE bands become weaker and a red shift of these bands is observed in the PL spectra. Yellow luminescence (YL) is observed in heavily Mg-doped GaN. The x-ray diffraction is employed to study the structure of the films. Hall measurement shows that there is a maximum value (3.9 × 10 18 cm −3 ) of hole concentration with increasing Mg source temperature for compensation effect. PL spectra of undoped GaN are also studied under N-rich and Ga-rich growth conditions. Yellow luminescences of undoped Ga-rich GaN and heavily Mg-doped GaN are compared, indicating the different origins of the YL bands. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. Techno-Economic Feasibility Study of Renewable Power Systems for a Small-Scale Plasma-Assisted Nitric Acid Plant in Africa

    Directory of Open Access Journals (Sweden)

    Aikaterini Anastasopoulou

    2016-12-01

    Full Text Available The expected world population growth by 2050 is likely to pose great challenges in the global food demand and, in turn, in the fertilizer consumption. The Food and Agricultural Organization of the United Nations has forecasted that 46% of this projected growth will be attributed to Africa. This, in turn, raises further concerns about the sustainability of Africa’s contemporary fertilizer production, considering also its high dependence on fertilizer imports. Based on these facts, a novel “green” route for the synthesis of fertilizers has been considered in the context of the African agriculture by means of plasma technology. More precisely, a techno-economic feasibility study has been conducted for a small-scale plasma-assisted nitric acid plant located in Kenya and South Africa with respect to the electricity provision by renewable energy sources. In this study, standalone solar and wind power systems, as well as a hybrid system, have been assessed for two different electricity loads against certain economic criteria. The relevant simulations have been carried out in HOMER software and the optimized configurations of each examined renewable power system are presented in this study.

  19. High Al-content AlxGa1-xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hussein, A.SH.; Thahab, S.M.; Hassan, Z.; Chin, C.W.; Abu Hassan, H.; Ng, S.S.

    2009-01-01

    The microstructure and optical properties of Al x Ga 1-x N/GaN/AlN films on Si (1 1 1) substrate grown by plasma-assisted molecular beam epitaxy (MBE) have been studied and investigated. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HR-XRD), energy dispersive X-ray spectroscopy (EDS) line analysis and photoluminescence (PL) were used to investigate a reconstruction pattern, cross-section, mole fraction and crystalline quality of the heterostructure. By applying the Vegard's law, a high Al-mole fraction of Al x Ga 1-x N sample with value of 0.43 has been obtained and compared with EDS line analysis measurement value. PL spectrum has exhibited a sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good crystal quality of the Al x Ga 1-x N has been successfully grown on Si substrate.

  20. The Study of Al0.29Ga0.71N-BASED Schottky Photodiodes Grown on Silicon by Plasma-Assisted Molecular Beam Epitaxy

    Science.gov (United States)

    Mohd Yusoff, M. Z.; Hassan, Z.; Chin, C. W.; Hassan, H. Abu; Abdullah, M. J.; Mohammad, N. N.; Ahmad, M. A.; Yusof, Y.

    2013-05-01

    In this paper, the growth and characterization of epitaxial Al0.29Ga0.71N grown on Si(111) by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane as x = 0.29. PL spectrum of sample has shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing that it is comparable in crystal quality of the sample when compared with previous reports. From the Raman measurement of as-grown Al0.29Ga0.71N layer on GaN/AlN/Si sample. We found that the dominant E2 (high) phonon mode of GaN appears at 572.7 cm-1. The E2 (high) mode of AlN appears at 656.7 cm-1 and deviates from the standard value of 655 cm-1 for unstrained AlN. Finally, AlGaN Schottky photodiode have been fabricated and analyzed by mean of electrical characterization, using current-voltage (I-V) measurement to evaluate the performance of this device.

  1. Plasma-Assisted Co-evaporation of S and Se for Wide Band Gap Chalcopyrite Photovoltaics: Final Subcontract Report, December 2001 -- April 2005

    Energy Technology Data Exchange (ETDEWEB)

    Repins, I.; Wolden, C.

    2005-08-01

    In this work, ITN Energy Systems (ITN) and lower-tier subcontractor Colorado School of Mines (CSM) explore the replacement of the molecular chalcogen precursors during deposition (e.g., Se2 or H2Se) with more reactive chalcogen monomers or radicals (e.g., Se). Molecular species are converted to atomic species in a low-pressure inductively coupled plasma (ICP). This program explored the use of plasma-activated chalcogen sources in CIGS co-evaporation to lower CIGS deposition temperature, increase utilization, increase deposition rate, and improve S:Se stoichiometry control. Plasma activation sources were designed and built, then operated and characterized over a wide range of conditions. Optical emission and mass spectrometry data show that chalcogens are effectively dissociated in the plasma. The enhanced reactivity achieved by the plasma processing was demonstrated by conversion of pre-deposited metal films to respective chalcogen-containing phases at low temperature and low chalcogen flux. The plasma-assisted co-evaporation (PACE) sources were also implemented in CIGS co-evaporation. No benefit from PACE was observed in device results, and frequent deposition failures occurred.

  2. Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

    Directory of Open Access Journals (Sweden)

    Abraham Arias

    2018-01-01

    Full Text Available β-Ga2O3 thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The films were grown using an elemental gallium source and oxygen supplied by an RF plasma source. Reflection high-energy electron diffraction (RHEED was used to monitor the surface quality in real time. Both in situ RHEED and ex situ X-ray diffraction confirmed the formation of single crystal β-phase films with excellent crystallinity on c-plane sapphire. Spectroscopic ellipsometry was used to determine the film thicknesses, giving values in the 11.6–18.8 nm range and the refractive index dispersion curves. UV-Vis transmittance measurements revealed that strong absorption of β-Ga2O3 starts at ∼270 nm. Top metal contacts were deposited by thermal evaporation for I-V characterization, which has been carried out in dark, as well as under visible and UV light illumination. The optical and electrical measurements showed that the grown thin films of β-Ga2O3 are excellent candidates for deep-ultraviolet detection and sensing.

  3. Specific features of NH{sub 3} and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Alexeev, A. N. [NTO ZAO (Russian Federation); Krasovitsky, D. M. [Svetlana-Rost ZAO (Russian Federation); Petrov, S. I., E-mail: petrov@semiteq.ru [NTO ZAO (Russian Federation); Chaly, V. P.; Mamaev, V. V. [Svetlana-Rost ZAO (Russian Federation); Sidorov, V. G. [St. Petersburg State Polytechnic University (Russian Federation)

    2015-01-15

    The specific features of how nitride HEMT heterostructures are produced by NH{sub 3} and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely high temperatures (up to 1150°C) can drastically improve the structural perfection of the active GaN layers and reduce the dislocation density in these layers to values of 9 × 10{sup 8}−1 × 10{sup 9} cm{sup −2}. The use of buffer layers of this kind makes it possible to obtain high-quality GaN/AlGaN heterostructures by both methods. At the same time, in contrast to ammonia MBE which is difficult to apply at T < 500°C (because of the low efficiency of ammonia decomposition), PA MBE is rather effective at low temperatures, e.g., for the growth of InAlN layers lattice-matched with GaN. The results obtained in the MBE growth of AlN/AlGaN/GaN/InAlN heterostructures by both PA-MBE and NH{sub 3}-MBE with an extremely high ammonia flux are demonstrated.

  4. A highly stable (SnOx-Sn)@few layered graphene composite anode of sodium-ion batteries synthesized by oxygen plasma assisted milling

    Science.gov (United States)

    Cheng, Deliang; Liu, Jiangwen; Li, Xiang; Hu, Renzong; Zeng, Meiqing; Yang, Lichun; Zhu, Min

    2017-05-01

    The (SnOx-Sn)@few layered graphene ((SnOx-Sn)@FLG) composite has been synthesized by oxygen plasma-assisted milling. Owing to the synergistic effect of rapid plasma heating and ball mill grinding, SnOx (1 ≤ x ≤ 2) nanoparticles generated from the reaction of Sn with oxygen are tightly wrapped by FLG nanosheets which are simultaneously exfoliated from expanded graphite, forming secondary micro granules. Inside the granules, the small size of the SnOx nanoparticles enables the fast kinetics for Na+ transfer. The in-situ formed FLG and residual Sn nanoparticles improve the electrical conductivity of the composite, meanwhile alleviate the aggregation of SnOx nanoparticles and relieve the volume change during the cycling, which is beneficial for the cyclic stability for the Na+ storage. As an anode material for sodium-ion batteries, the (SnOx-Sn)@FLG composite exhibits a high reversible capacity of 448 mAh g-1 at a current density of 100 mA g-1 in the first cycle, with 82.6% capacity retention after 250 cycles. Even when the current density increases to 1000 mA g-1, this composite retains 316.5 mAh g-1 after 250 cycles. With superior Na+ storage stability, the (SnOx-Sn)@FLG composite can be a promising anode material for high performance sodium-ion batteries.

  5. Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kalkofen, Bodo, E-mail: bodo.kalkofen@ovgu.de; Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Garke, Bernd [Institute for Experimental Physics, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

    2015-05-15

    Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

  6. Self-excitation of microwave oscillations in plasma-assisted slow-wave oscillators by an electron beam with a movable focus

    Science.gov (United States)

    Bliokh, Yu. P.; Nusinovich, G. S.; Shkvarunets, A. G.; Carmel, Y.

    2004-10-01

    Plasma-assisted slow-wave oscillators (pasotrons) operate without external magnetic fields, which makes these devices quite compact and lightweight. Beam focusing in pasotrons is provided by ions, which appear in the device due to the impact ionization of a neutral gas by beam electrons. Typically, the ionization time is on the order of the rise time of the beam current. This means that, during the rise of the current, beam focusing by ions becomes stronger. Correspondingly, a beam of electrons, which was initially diverging radially due to the self-electric field, starts to be focused by ions, and this focus moves towards the gun as the ion density increases. This feature makes the self-excitation of electromagnetic (em) oscillations in pasotrons quite different from practically all other microwave sources where em oscillations are excited by a stationary electron beam. The process of self-excitation of em oscillations has been studied both theoretically and experimentally. It is shown that in pasotrons, during the beam current rise the amount of current entering the interaction space and the beam coupling to the em field vary. As a result, the self-excitation can proceed faster than in conventional microwave sources with similar operating parameters such as the operating frequency, cavity quality-factor and the beam current and voltage.

  7. On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy

    KAUST Repository

    Mishra, Pawan

    2016-05-23

    In this paper, c-plane stepped- and graded- InGaN/GaN multiple quantum wells (MQWs) are grown using plasma assisted molecular beam epitaxy (PAMBE) by in situ surface stoichiometry monitoring (i-SSM). Such a technique considerably reduces the strain build-up due to indium clustering within and across graded-MQWs; especially for QW closer to the top which results in mitigation of the quantum-confined Stark effect (QCSE). This is validated by a reduced power dependent photoluminescence blueshift of 10 meV in graded-MQWs as compared to a blueshift of 17 meV for stepped-MQWs. We further analyze microstrain within the MQWs, using Raman spectroscopy and geometrical phase analysis (GPA) on high-angle annular dark-field (HAADF)-scanning transmission electron microscope (STEM) images of stepped- and graded-MQWs, highlighting the reduction of ~1% strain in graded-MQWs over stepped-MQWs. Our analysis provides direct evidence of the advantage of graded-MQWs for the commercially viable c-plane light-emitting and laser diodes. © 2016 Optical Society of America.

  8. Vaporization of irradiated droplets

    International Nuclear Information System (INIS)

    Armstrong, R.L.; O'Rourke, P.J.; Zardecki, A.

    1986-01-01

    The vaporization of a spherically symmetric liquid droplet subject to a high-intensity laser flux is investigated on the basis of a hydrodynamic description of the system composed of the vapor and ambient gas. In the limit of the convective vaporization, the boundary conditions at the fluid--gas interface are formulated by using the notion of a Knudsen layer in which translational equilibrium is established. This leads to approximate jump conditions at the interface. For homogeneous energy deposition, the hydrodynamic equations are solved numerically with the aid of the CON1D computer code (''CON1D: A computer program for calculating spherically symmetric droplet combustion,'' Los Alamos National Laboratory Report No. LA-10269-MS, December, 1984), based on the implict continuous--fluid Eulerian (ICE) [J. Comput. Phys. 8, 197 (1971)] and arbitrary Lagrangian--Eulerian (ALE) [J. Comput. Phys. 14, 1227 (1974)] numerical mehtods. The solutions exhibit the existence of two shock waves propagating in opposite directions with respect to the contact discontinuity surface that separates the ambient gas and vapor

  9. Vapor liquid fraction determination

    International Nuclear Information System (INIS)

    1980-01-01

    This invention describes a method of measuring liquid and vapor fractions in a non-homogeneous fluid flowing through an elongate conduit, such as may be required with boiling water, non-boiling turbulent flows, fluidized bed experiments, water-gas mixing analysis, and nuclear plant cooling. (UK)

  10. Heat of vaporization spectrometer

    International Nuclear Information System (INIS)

    Edwards, D. Jr.

    1978-01-01

    Multilayer desorption measurements of various substances adsorbed on a stainless steel substrate are found to exhibit desorption profiles consistent with a zeroth order desorption model. The singleness of the desorption transients together with their narrow peak widths makes the technique ideally suited for a heat of vaporization spectrometer for either substance analysis or identification

  11. Enthalpy of Vaporization and Vapor Pressures: An Inexpensive Apparatus

    Science.gov (United States)

    Battino, Rubin; Dolson, David A.; Hall, Michael A.; Letcher, Trevor M.

    2007-01-01

    A simple and inexpensive method to determine the enthalpy of vaporization of liquids by measuring vapor pressure as a function of temperature is described. The vapor pressures measured with the stopcock cell were higher than the literature values and those measured with the sidearm rubber septum cell were both higher and lower than literature…

  12. Influence of non-thermal TiCl{sub 4}/Ar + O{sub 2} plasma-assisted TiOx based coatings on the surface of polypropylene (PP) films for the tailoring of surface properties and cytocompatibility

    Energy Technology Data Exchange (ETDEWEB)

    Pandiyaraj, K.N., E-mail: dr.knpr@gmail.com [Surface Engineering Laboratory, Department of Physics, Sri Shakthi Institute of Engineering and Technology, L& T by pass, Chinniyam Palayam (post), Coimbatore 641062 (India); Kumar, A. Arun; Ramkumar, M.C. [Surface Engineering Laboratory, Department of Physics, Sri Shakthi Institute of Engineering and Technology, L& T by pass, Chinniyam Palayam (post), Coimbatore 641062 (India); Sachdev, A.; Gopinath, P. [Nanobiotechnology Laboratory, Centre for Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand 247667 (India); Cools, Pieter; De Geyter, N.; Morent, R. [Research Unit Plasma Technology (RUPT), Department of Applied Physics, Faculty of Engineering and Architecture, Ghent University, Jozef Plateaustraat 22, 9000 Gent (Belgium); Deshmukh, R.R. [Department of Physics, Institute of Chemical Technology, Matunga, Mumbai 400 019 (India); Hegde, P. [William Mason High School, Mason 45040 (United States); Han, C. [Department of Biomedical, Chemical and Environmental Engineering, University of Cincinnati, Cincinnati, OH 45221-0012 (United States); Nadagouda, M.N. [Center for Nanoscale Multifunctional Materials, Wright State University, Dayton, OH 45435 (United States)

    2016-05-01

    of plasma treated PP films. Moreover the surface of modified PP films exhibited nano structured morphology, as confirmed by SEM, TEM and AFM. The physico-chemical changes have improved the hydrophilicity of the PP films. The in-vitro analysis clearly confirms that the TiOx coated PP films performs as good as the standard tissue culture plates and also are unlikely to impact the bacterial cell viability. - Highlights: • Developed TiOx based coating on the surface of PP films through DC glow discharge plasma assisted chemical vapor deposition. • The TiOx based coating was deposited as a function of applied potentials. • The comprehensive investigation has made on mechanism of formation of TiOx based coating. • The surface TiOx/PP films were characterized by various techniques. • The cell compatibility and antibacterial activity of the TiOx/PP films wasanalyzed in detail.

  13. PHYSICS

    CERN Multimedia

    P. Sphicas

    There have been three physics meetings since the last CMS week: “physics days” on March 27-29, the Physics/ Trigger week on April 23-27 and the most recent physics days on May 22-24. The main purpose of the March physics days was to finalize the list of “2007 analyses”, i.e. the few topics that the physics groups will concentrate on for the rest of this calendar year. The idea is to carry out a full physics exercise, with CMSSW, for select physics channels which test key features of the physics objects, or represent potential “day 1” physics topics that need to be addressed in advance. The list of these analyses was indeed completed and presented in the plenary meetings. As always, a significant amount of time was also spent in reviewing the status of the physics objects (reconstruction) as well as their usage in the High-Level Trigger (HLT). The major event of the past three months was the first “Physics/Trigger week” in Apri...

  14. Vapor pressure and enthalpy of vaporization of linear aliphatic alkanediamines

    International Nuclear Information System (INIS)

    Pozdeev, Vasiliy A.; Verevkin, Sergey P.

    2011-01-01

    Highlights: → We measured vapor pressure of diamines H 2 N-(CH 2 ) n -NH 2 with n = 3 to 12. → Vaporization enthalpies at 298 K were derived. → We examined consistency of new and available in the literature data. → Enthalpies of vaporization show linear dependence on numbers n. → Enthalpies of vaporization correlate linearly with Kovat's indices. - Abstract: Vapor pressures and the molar enthalpies of vaporization of the linear aliphatic alkanediamines H 2 N-(CH 2 ) n -NH 2 with n = (3 to 12) have been determined using the transpiration method. A linear correlation of enthalpies of vaporization (at T = 298.15 K) of the alkanediamines with the number n and with the Kovat's indices has been found, proving the internal consistency of the measured data.

  15. Plasma-surface interaction at sharp edges and corners during ion-assisted physical vapor deposition. Part I: Edge-related effects and their influence on coating morphology and composition

    International Nuclear Information System (INIS)

    Macak, E.B.; Muenz, W.-D.; Rodenburg, J.M.

    2003-01-01

    Ion-assisted physical vapor deposition (PVD) is a common industrial method for growing thin coatings of various interstitial nitride alloys. The interaction between the ions and three-dimensional nonflat samples during the deposition can, however, lead to unwanted local changes in the properties of the coating and thus its performance. We analyze the characteristics of the ion bombardment during ion-assisted PVD on sharp convex substrates and their effect on the growing coating. We show that the magnitude and the spatial extent of the edge-related changes are directly related to the characteristics of the plasma sheath around the biased edges. We examine the influence of the edge geometry and the deposition conditions. The edge-related effects are studied on the example of wedge-shaped samples coated with TiAlN/VN by closed-field unbalanced magnetron deposition process using high-flux low-energy Ar + -ion irradiation (J i /J me ∼4, E i =75-150 eV). The samples are analyzed by scanning electron microscopy and energy-dispersive x-ray spectroscopy. Significant changes in the morphology, thickness, and composition of the coatings are found in the edge region. In order to account for the changes, we apply a self-consistent model of the plasma sheath around wedge-shaped samples proposed by Watterson [J. Phys. D 22, 1300 (1989)], to our conditions. For a 30 deg. wedge coated at -150 V, the resputtering rate in the edge region is found to be increased by up to ten times as compared to flat substrate areas. The effect is due to the combined action of an increased ion flux and increased sputtering yield as a result of the nonperpendicular angle of incidence of ions in the edge region. The situation at sharp corners, where even more severe effects are observed, is analyzed and modeled in the companion article E. B. Macak et al., J. Appl. Phys. (2003) (Part II)

  16. Development of a plasma assisted ITER level controlled heat source and observation of novel micro/nanostructures produced upon exposure of tungsten targets

    Energy Technology Data Exchange (ETDEWEB)

    Aomoa, N.; Sarmah, Trinayan; Sah, Puspalata [CIMPLE-PSI Laboratory, Centre of Plasma Physics-Institute for Plasma Research, Sonapur 782 402 Assam (India); Chaudhuri, P.; Khirwarker, S.; Ghosh, J. [Institute for Plasma Research, Gandhinagar 382428 Gujarat (India); Satpati, B. [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Kakati, M., E-mail: mayurkak@rediffmail.com [CIMPLE-PSI Laboratory, Centre of Plasma Physics-Institute for Plasma Research, Sonapur 782 402 Assam (India); De Temmerman, G. [ITER Organization, Route de Vinon-sur-Verdon, CS 90 046 Saint Paul Lez Durance, Cedex (France)

    2016-05-15

    Highlights: • Developed a plasma assisted ITER level high heat flux device for material testing. • The beam deposits over 10 MW/m{sup 2} flux uniformly over a remote material target. • Hopper micro-crystals were growing while exposing Plansee tungsten in the device. • CIMPLE-PSI being developed for exact reproduction of Tokomak Divertor conditions. - Abstract: This paper reports on the development of a simple, low-cost, segmented plasma torch assisted high-heat flux device for material testing, which can simulate the extreme heat flux expected in future fusion devices. Calorimetric measurements confirmed uniform heat deposition by the well collimated argon plasma beam over a target surface with power fluxes in excess of 10 MW/m{sup 2} during high current, high gas flow rate operations. To understand the outcome of possible melting of first wall material in an ITER like machine, an Plansee tungsten target was exposed in this device, which witnessed growth of micrometer level Hopper crystals and their aggregation to vertical grains in central exposed region. Increase in viscosity of the metal during high under-cooling is believed to have lead to the skeletal patterns, observed for the first time for tungsten here. Transmission electron microscopy confirmed that re-solidified grains on the target actually had crystalline substructures in the nanometer level. This laboratory is in the process of developing an exact linear Tokamak Divertor simulator, where a magnetized hydrogen/helium collimated plasma jet will be produced at higher vacuum, for plasma material interaction studies with direct relevance to modern plasma fusion machines.

  17. Low-loss interference filter arrays made by plasma-assisted reactive magnetron sputtering (PARMS) for high-performance multispectral imaging

    Science.gov (United States)

    Broßmann, Jan; Best, Thorsten; Bauer, Thomas; Jakobs, Stefan; Eisenhammer, Thomas

    2016-10-01

    Optical remote sensing of the earth from air and space typically utilizes several channels in the visible and near infrared spectrum. Thin-film optical interference filters, mostly of narrow bandpass type, are applied to select these channels. The filters are arranged in filter wheels, arrays of discrete stripe filters mounted in frames, or patterned arrays on a monolithic substrate. Such multi-channel filter assemblies can be mounted close to the detector, which allows a compact and lightweight camera design. Recent progress in image resolution and sensor sensitivity requires improvements of the optical filter performance. Higher demands placed on blocking in the UV and NIR and in between the spectral channels, in-band transmission and filter edge steepness as well as scattering lead to more complex filter coatings with thicknesses in the range of 10 - 25μm. Technological limits of the conventionally used ion-assisted evaporation process (IAD) can be overcome only by more precise and higher-energetic coating technologies like plasma-assisted reactive magnetron sputtering (PARMS) in combination with optical broadband monitoring. Optics Balzers has developed a photolithographic patterning process for coating thicknesses up to 15μm that is fully compatible with the advanced PARMS coating technology. This provides the possibility of depositing multiple complex high-performance filters on a monolithic substrate. We present an overview of the performance of recently developed filters with improved spectral performance designed for both monolithic filter-arrays and stripe filters mounted in frames. The pros and cons as well as the resulting limits of the filter designs for both configurations are discussed.

  18. Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy

    KAUST Repository

    Tangi, Malleswararao

    2016-07-26

    The dislocation free Inx Al 1-xN nanowires (NWs) are grown on Si(111) by nitrogen plasma assisted molecular beam epitaxy in the temperature regime of 490 °C–610 °C yielding In composition ranges over 0.50 ≤ x ≤ 0.17. We study the optical properties of these NWs by spectroscopic ellipsometry (SE), photoluminescence, and Raman spectroscopies since they possesses minimal strain with reduced defects comparative to the planar films. The optical bandgap measurements of Inx Al 1-xN NWs are demonstrated by SE where the absorption edges of the NW samples are evaluated irrespective of substrate transparency. A systematic Stoke shift of 0.04–0.27 eV with increasing x was observed when comparing the micro-photoluminescence spectra with the Tauc plot derived from SE. The micro-Raman spectra in the NWs with x = 0.5 showed two-mode behavior for A1(LO) phonons and single mode behavior for E2 H phonons. As for x = 0.17, i.e., high Al content, we observed a peculiar E2 H phonon mode splitting. Further, we observe composition dependent frequency shifts. The 77 to 600 K micro-Raman spectroscopy measurements show that both AlN- and InN-like modes of A1(LO) and E2 H phonons in Inx Al 1-xN NWs are redshifted with increasing temperature, similar to that of the binary III group nitride semiconductors. These studies of the optical properties of the technologically important Inx Al 1-xN nanowires will path the way towards lasers and light-emitting diodes in the wavelength of the ultra-violet and visible range.

  19. Controlled release of moxifloxacin from intraocular lenses modified by Ar plasma-assisted grafting with AMPS or SBMA: An in vitro study.

    Science.gov (United States)

    Pimenta, A F R; Vieira, A P; Colaço, R; Saramago, B; Gil, M H; Coimbra, P; Alves, P; Bozukova, D; Correia, T R; Correia, I J; Guiomar, A J; Serro, A P

    2017-08-01

    Intraocular lenses (IOLs) present an alternative for extended, local drug delivery in the prevention of post-operative acute endophthalmitis. In the present work, we modified the surface of a hydrophilic acrylic material, used for manufacturing of IOLs, through plasma-assisted grafting copolymerization of 2-acrylamido-2-methylpropane sulfonic acid (AMPS) or [2-(methacryloyloxy)ethyl]dimethyl-(3-sulfopropyl)ammonium hydroxide (SBMA), with the aim of achieving a controlled and effective drug release. The material was loaded with moxifloxacin (MFX), a commonly used antibiotic for endophthalmitis prevention. The characterization of the modified material showed that relevant properties, like swelling capacity, wettability, refractive index and transmittance, were not affected by the surface modification. Concerning the drug release profiles, the most promising result was obtained when AMPS grafting was done in the presence of MFX. This modification led to a higher amount of drug being released for a longer period of time, which is a requirement for the prevention of endophthalmitis. The material was found to be non-cytotoxic for rabbit corneal endothelial cells. In a second step, prototype IOLs were modified with AMPS and loaded with MFX as previously and, after sterilization and storage (30days), they were tested under dynamic conditions, in a microfluidic cell with volume and renovation rate similar to the eye aqueous humour. MFX solutions collected in this assay were tested against Staphylococcus aureus and Staphylococcus epidermidis and the released antibiotic proved to be effective against both bacteria until the 12th day of release. Copyright © 2017 Elsevier B.V. All rights reserved.

  20. Nitridation effects of Si(1 1 1) substrate surface on InN nanorods grown by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Shan [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tan, Jin, E-mail: jintan_cug@163.com [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Engineering Research Center of Nano-Geomaterials of Ministry of Education, China University of Geosciences, Wuhan 430074 (China); Li, Bin; Song, Hao; Wu, Zhengbo; Chen, Xin [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China)

    2015-02-05

    Graphical abstract: The morphology evolution of InN nanorods in samples (g)–(i). The alignment of InN nanorods is improved and the deviation angle distribution narrows down with increase in nitriding time. It suggests that extending the nitriding time can enhance the vertical orientation of InN nanorods. - Highlights: • InN nanorods were grown on surface nitrided Si(1 1 1) substrate using PAMBE system. • Nitridation of substrate surface has a strong effect on morphology of InN nanorods. • InN nanorods cannot be formed with 1 min nitridation of Si(1 1 1) substrate. • Increasing nitriding time will increase optimum growth temperature of InN nanorods. • Increasing nitriding time can enhance vertical orientation of InN nanorods. - Abstract: The InN nanorods were grown on Si(1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE) system, with a substrate nitridation process. The effect of nitriding time of Si(1 1 1) substrate on morphology, orientation and growth temperature of InN nanorods was characterized via scanning electron microscopy (SEM) and X-ray diffraction (XRD). The deviation angle of InN nanorods was measured to evaluate the alignment of arrays. The results showed that InN nanorods could not be formed with 1 min nitridation of Si(1 1 1) substrate, but they could be obtained again when the nitriding time was increased to more than 10 min. In order to get aligned InN nanorods, the growth temperature needed to increase with longer nitriding time. The vertical orientation of InN nanorods could be enhanced with increase in nitriding time. The influence of the substrate nitridation on the photoluminescence (PL) spectra of InN nanorods has been investigated.

  1. Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

    2018-04-01

    Deep level defects were characterized in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using deep level optical spectroscopy (DLOS) and deep level transient (thermal) spectroscopy (DLTS) applied to Ni/β-Ga2O3:Ge (010) Schottky diodes that displayed Schottky barrier heights of 1.50 eV. DLOS revealed states at EC - 2.00 eV, EC - 3.25 eV, and EC - 4.37 eV with concentrations on the order of 1016 cm-3, and a lower concentration level at EC - 1.27 eV. In contrast to these states within the middle and lower parts of the bandgap probed by DLOS, DLTS measurements revealed much lower concentrations of states within the upper bandgap region at EC - 0.1 - 0.2 eV and EC - 0.98 eV. There was no evidence of the commonly observed trap state at ˜EC - 0.82 eV that has been reported to dominate the DLTS spectrum in substrate materials synthesized by melt-based growth methods such as edge defined film fed growth (EFG) and Czochralski methods [Zhang et al., Appl. Phys. Lett. 108, 052105 (2016) and Irmscher et al., J. Appl. Phys. 110, 063720 (2011)]. This strong sensitivity of defect incorporation on crystal growth method and conditions is unsurprising, which for PAMBE-grown β-Ga2O3:Ge manifests as a relatively "clean" upper part of the bandgap. However, the states at ˜EC - 0.98 eV, EC - 2.00 eV, and EC - 4.37 eV are reminiscent of similar findings from these earlier results on EFG-grown materials, suggesting that possible common sources might also be present irrespective of growth method.

  2. Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    M. Agrawal

    2017-01-01

    Full Text Available The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE has been studied. AlN nucleation layer and GaN layer were grown as a function of III/V ratio. GaN/AlN structure is found to form buried cracks when AlN is grown in the intermediate growth regime(III/V∼1and GaN is grown under N-rich growth regime (III/V<1. The III/V ratio determines the growth mode of the layers that influences the lattice mismatch at the GaN/AlN interface. The lattice mismatch induced interfacial stress at the GaN/AlN interface relaxes by the formation of buried cracks in the structure. Additionally, the stress also relaxes by misorienting the AlN resulting in two misorientations with different tilts. Crack-free layers were obtained when AlN and GaN were grown in the N-rich growth regime (III/V<1 and metal rich growth regime (III/V≥1, respectively. AlGaN/GaN high electron mobility transistor (HEMT heterostructure was demonstrated on 2-inch SiC that showed good two dimensional electron gas (2DEG properties with a sheet resistance of 480 Ω/sq, mobility of 1280 cm2/V.s and sheet carrier density of 1×1013 cm−2.

  3. PHYSICS

    CERN Multimedia

    D. Acosta

    2010-01-01

    A remarkable amount of progress has been made in Physics since the last CMS Week in June given the exponential growth in the delivered LHC luminosity. The first major milestone was the delivery of a variety of results to the ICHEP international conference held in Paris this July. For this conference, CMS prepared 15 Physics Analysis Summaries on physics objects and 22 Summaries on new and interesting physics measurements that exploited the luminosity recorded by the CMS detector. The challenge was incorporating the largest batch of luminosity that was delivered only days before the conference (300 nb-1 total). The physics covered from this initial running period spanned hadron production measurements, jet production and properties, electroweak vector boson production, and even glimpses of the top quark. Since then, the accumulated integrated luminosity has increased by a factor of more than 100, and all groups have been working tremendously hard on analysing this dataset. The September Physics Week was held ...

  4. Constrained Vapor Bubble Experiment

    Science.gov (United States)

    Gokhale, Shripad; Plawsky, Joel; Wayner, Peter C., Jr.; Zheng, Ling; Wang, Ying-Xi

    2002-11-01

    Microgravity experiments on the Constrained Vapor Bubble Heat Exchanger, CVB, are being developed for the International Space Station. In particular, we present results of a precursory experimental and theoretical study of the vertical Constrained Vapor Bubble in the Earth's environment. A novel non-isothermal experimental setup was designed and built to study the transport processes in an ethanol/quartz vertical CVB system. Temperature profiles were measured using an in situ PC (personal computer)-based LabView data acquisition system via thermocouples. Film thickness profiles were measured using interferometry. A theoretical model was developed to predict the curvature profile of the stable film in the evaporator. The concept of the total amount of evaporation, which can be obtained directly by integrating the experimental temperature profile, was introduced. Experimentally measured curvature profiles are in good agreement with modeling results. For microgravity conditions, an analytical expression, which reveals an inherent relation between temperature and curvature profiles, was derived.

  5. PHYSICS

    CERN Multimedia

    J. Incandela

    There have been numerous developments in the physics area since the September CMS week. The biggest single event was the Physics/Trigger week in the end of Octo¬ber, whereas in terms of ongoing activities the “2007 analyses” went into high gear. This was in parallel with participation in CSA07 by the physics groups. On the or¬ganizational side, the new conveners of the physics groups have been selected, and a new database for man¬aging physics analyses has been deployed. Physics/Trigger week The second Physics-Trigger week of 2007 took place during the week of October 22-26. The first half of the week was dedicated to working group meetings. The ple¬nary Joint Physics-Trigger meeting took place on Wednesday afternoon and focused on the activities of the new Trigger Studies Group (TSG) and trigger monitoring. Both the Physics and Trigger organizations are now focused on readiness for early data-taking. Thus, early trigger tables and preparations for calibr...

  6. PHYSICS

    CERN Multimedia

    P. Sphicas

    The CPT project came to an end in December 2006 and its original scope is now shared among three new areas, namely Computing, Offline and Physics. In the physics area the basic change with respect to the previous system (where the PRS groups were charged with detector and physics object reconstruction and physics analysis) was the split of the detector PRS groups (the old ECAL-egamma, HCAL-jetMET, Tracker-btau and Muons) into two groups each: a Detector Performance Group (DPG) and a Physics Object Group. The DPGs are now led by the Commissioning and Run Coordinator deputy (Darin Acosta) and will appear in the correspond¬ing column in CMS bulletins. On the physics side, the physics object groups are charged with the reconstruction of physics objects, the tuning of the simulation (in collaboration with the DPGs) to reproduce the data, the provision of code for the High-Level Trigger, the optimization of the algorithms involved for the different physics analyses (in collaboration with the analysis gr...

  7. Vapor condensation device

    International Nuclear Information System (INIS)

    Sakurai, Manabu; Hirayama, Fumio; Kurosawa, Setsumi; Yoshikawa, Jun; Hosaka, Seiichi.

    1992-01-01

    The present invention enables to separate and remove 14 C as CO 3 - ions without condensation in a vapor condensation can of a nuclear facility. That is, the vapor condensation device of the nuclear facility comprises (1) a spray pipe for spraying an acidic aqueous solution to the evaporation surface of an evaporation section, (2) a spray pump for sending the acidic aqueous solution to the spray pipe, (3) a tank for storing the acidic aqueous solution, (4) a pH sensor for detecting pH of the evaporation section, (5) a pH control section for controlling the spray pump, depending on the result of the detection of the pH sensor. With such a constitution, the pH of liquid wastes on the vaporization surface is controlled to 7 by spraying an aqueous solution of dilute sulfuric acid to the evaporation surface, thereby enabling to increase the transfer rate of 14 C to condensates to 60 to 70%. If 14 C is separated and removed as a CO 2 gas from the evaporation surface, the pH of the liquid wastes returns to the alkaline range of 9 to 10 and the liquid wastes are returned to a heating section. The amount of spraying the aqueous solution of dilute sulfuric acid can be controlled till the pH is reduced to 5. (I.S.)

  8. The vapor pressures of explosives

    Energy Technology Data Exchange (ETDEWEB)

    Ewing, Robert G.; Waltman, Melanie J.; Atkinson, David A.; Grate, Jay W.; Hotchkiss, Peter

    2013-01-05

    The vapor pressures of many explosive compounds are extremely low and thus determining accurate values proves difficult. Many researchers, using a variety of methods, have measured and reported the vapor pressures of explosives compounds at single temperatures, or as a function of temperature using vapor pressure equations. There are large variations in reported vapor pressures for many of these compounds, and some errors exist within individual papers. This article provides a review of explosive vapor pressures and describes the methods used to determine them. We have compiled primary vapor pressure relationships traceable to the original citations and include the temperature ranges for which they have been determined. Corrected values are reported as needed and described in the text. In addition, after critically examining the available data, we calculate and tabulate vapor pressures at 25 °C.

  9. VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS

    Energy Technology Data Exchange (ETDEWEB)

    Eric M. Suuberg; Vahur Oja

    1997-07-01

    This project had as its main focus the determination of vapor pressures of coal pyrolysis tars. It involved performing measurements of these vapor pressures and from them, developing vapor pressure correlations suitable for use in advanced pyrolysis models (those models which explicitly account for mass transport limitations). This report is divided into five main chapters. Each chapter is a relatively stand-alone section. Chapter A reviews the general nature of coal tars and gives a summary of existing vapor pressure correlations for coal tars and model compounds. Chapter B summarizes the main experimental approaches for coal tar preparation and characterization which have been used throughout the project. Chapter C is concerned with the selection of the model compounds for coal pyrolysis tars and reviews the data available to us on the vapor pressures of high boiling point aromatic compounds. This chapter also deals with the question of identifying factors that govern the vapor pressures of coal tar model materials and their mixtures. Chapter D covers the vapor pressures and heats of vaporization of primary cellulose tars. Chapter E discusses the results of the main focus of this study. In summary, this work provides improved understanding of the volatility of coal and cellulose pyrolysis tars. It has resulted in new experimentally verified vapor pressure correlations for use in pyrolysis models. Further research on this topic should aim at developing general vapor pressure correlations for all coal tars, based on their molecular weight together with certain specific chemical characteristics i.e. hydroxyl group content.

  10. PHYSICS

    CERN Multimedia

    Submitted by

    Physics Week: plenary meeting on physics groups plans for startup (14–15 May 2008) The Physics Objects (POG) and Physics Analysis (PAG) Groups presented their latest developments at the plenary meeting during the Physics Week. In the presentations particular attention was given to startup plans and readiness for data-taking. Many results based on the recent cosmic run were shown. A special Workshop on SUSY, described in a separate section, took place the day before the plenary. At the meeting, we had also two special DPG presentations on “Tracker and Muon alignment with CRAFT” (Ernesto Migliore) and “Calorimeter studies with CRAFT” (Chiara Rovelli). We had also a report from Offline (Andrea Rizzi) and Computing (Markus Klute) on the San Diego Workshop, described elsewhere in this bulletin. Tracking group (Boris Mangano). The level of sophistication of the tracking software increased significantly over the last few months: V0 (K0 and Λ) reconstr...

  11. Plasma-Assisted Deposition of Au/SiO2 Multi-layers as Surface Plasmon Resonance-Based Red-Colored Coatings

    NARCIS (Netherlands)

    Beyene, H. T.; Tichelaar, F. D.; Verheijen, M. A.; M. C. M. van de Sanden,; Creatore, M.

    2011-01-01

    In this work, the expanding thermal plasma chemical vapor deposition in combination with radio frequency magnetron sputtering is used to deposit dielectric/metal multi-layers with controlled size and density of nanoparticles. The multi-layer structure serves the purpose of increasing the

  12. Plasma assisted deposition of Au/SiO2 multi-layers as surface plasmon resonance-based red colored coatings

    NARCIS (Netherlands)

    Takele Beyene, H.T.; Tichelaar, F.D.; Verheijen, M.A.; Sanden, van de M.C.M.; Creatore, M.

    2011-01-01

    In this work, the expanding thermal plasma chemical vapor deposition in combination with radio frequency magnetron sputtering is used to deposit dielectric/metal multi-layers with controlled size and density of nanoparticles. The multi-layer structure serves the purpose of increasing the

  13. Experimental setup for producing tungsten coated graphite tiles using plasma enhanced chemical vapor deposition technique for fusion plasma applications

    International Nuclear Information System (INIS)

    Chauhan, Sachin Singh; Sharma, Uttam; Choudhary, K.K.; Sanyasi, A.K.; Ghosh, J.; Sharma, Jayshree

    2013-01-01

    Plasma wall interaction (PWI) in fusion grade machines puts stringent demands on the choice of materials in terms of high heat load handling capabilities and low sputtering yields. Choice of suitable material still remains a challenge and open topic of research for the PWI community. Carbon fibre composites (CFC), Beryllium (Be), and Tungsten (W) are now being considered as first runners for the first wall components of future fusion machines. Tungsten is considered to be one of the suitable materials for the job because of its superior properties than carbon like low physical sputtering yield and high sputter energy threshold, high melting point, fairly high re-crystallization temperature, low fuel retention capabilities, low chemical sputtering with hydrogen and its isotopes and most importantly the reparability with various plasma techniques both ex-situ and in-situ. Plasma assisted chemical vapour deposition is considered among various techniques as the most preferable technique for fabricating tungsten coated graphite tiles to be used as tokamak first wall and target components. These coated tiles are more favourable compared to pure tungsten due to their light weight and easier machining. A system has been designed, fabricated and installed at SVITS, Indore for producing tungsten coated graphite tiles using Plasma Enhanced Chemical Vapor Deposition (PE-CVD) technique for Fusion plasma applications. The system contains a vacuum chamber, a turbo-molecular pump, two electrodes, vacuum gauges, mass analyzer, mass flow controllers and a RF power supply for producing the plasma using hydrogen gas. The graphite tiles will be put on one of the electrodes and WF6 gas will be inserted in a controlled manner in the hydrogen plasma to achieve the tungsten-coating with WF6 dissociation. The system is integrated at SVITS, Indore and a vacuum of the order of 3*10 -6 is achieved and glow discharge plasma has been created to test all the sub-systems. The system design with

  14. Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces

    International Nuclear Information System (INIS)

    Michl, Julia; Zaiser, Sebastian; Jakobi, Ingmar; Waldherr, Gerald; Dolde, Florian; Neumann, Philipp; Wrachtrup, Jörg; Teraji, Tokuyuki; Doherty, Marcus W.; Manson, Neil B.; Isoya, Junichi

    2014-01-01

    Synthetic diamond production is a key to the development of quantum metrology and quantum information applications of diamond. The major quantum sensor and qubit candidate in diamond is the nitrogen-vacancy (NV) color center. This lattice defect comes in four different crystallographic orientations leading to an intrinsic inhomogeneity among NV centers, which is undesirable in some applications. Here, we report a microwave plasma-assisted chemical vapor deposition diamond growth technique on (111)-oriented substrates, which yields perfect alignment (94% ± 2%) of as-grown NV centers along a single crystallographic direction. In addition, clear evidence is found that the majority (74% ± 4%) of the aligned NV centers were formed by the nitrogen being first included in the (111) growth surface and then followed by the formation of a neighboring vacancy on top. The achieved homogeneity of the grown NV centers will tremendously benefit quantum information and metrology applications

  15. PHYSICS

    CERN Multimedia

    D. Futyan

    A lot has transpired on the “Physics” front since the last CMS Bulletin. The summer was filled with preparations of new Monte Carlo samples based on CMSSW_3, the finalization of all the 10 TeV physics analyses [in total 50 analyses were approved] and the preparations for the Physics Week in Bologna. A couple weeks later, the “October Exercise” commenced and ran through an intense two-week period. The Physics Days in October were packed with a number of topics that are relevant to data taking, in a number of “mini-workshops”: the luminosity measurement, the determination of the beam spot and the measurement of the missing transverse energy (MET) were the three main topics.  Physics Week in Bologna The second physics week in 2009 took place in Bologna, Italy, on the week of Sep 7-11. The aim of the week was to review and establish how ready we are to do physics with the early collisions at the LHC. The agenda of the week was thus pac...

  16. PHYSICS

    CERN Multimedia

    D. Futyan

    A lot has transpired on the “Physics” front since the last CMS Bulletin. The summer was filled with preparations of new Monte Carlo samples based on CMSSW_3, the finalization of all the 10 TeV physics analyses [in total 50 analyses were approved] and the preparations for the Physics Week in Bologna. A couple weeks later, the “October Exercise” commenced and ran through an intense two-week period. The Physics Days in October were packed with a number of topics that are relevant to data taking, in a number of “mini-workshops”: the luminosity measurement, the determination of the beam spot and the measurement of the missing transverse energy (MET) were the three main topics.   Physics Week in Bologna The second physics week in 2009 took place in Bologna, Italy, on the week of Sep 7-11. The aim of the week was to review and establish (we hoped) the readiness of CMS to do physics with the early collisions at the LHC. The agenda of the...

  17. Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods

    Energy Technology Data Exchange (ETDEWEB)

    Nepal, Neeraj [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Anderson, Virginia R. [American Society for Engineering Education, 1818 N Street NW, Washington, DC 20036; Johnson, Scooter D. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Downey, Brian P. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Meyer, David J. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; DeMasi, Alexander [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Robinson, Zachary R. [Department of Physics, SUNY College at Brockport, 350 New Campus Dr, Brockport, New York 14420; Ludwig, Karl F. [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Eddy, Charles R. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375

    2017-03-13

    The temporal evolution of high quality indium nitride (InN) growth by plasma-assisted atomic layer epitaxy (ALEp) on a-plane sapphire at 200 and 248 °C was probed by synchrotron x-ray methods. The growth was carried out in a thin film growth facility installed at beamline X21 of the National Synchrotron Light Source at Brookhaven National Laboratory and at beamline G3 of the Cornell High Energy Synchrotron Source, Cornell University. Measurements of grazing incidence small angle x-ray scattering (GISAXS) during the initial cycles of growth revealed a broadening and scattering near the diffuse specular rod and the development of scattering intensities due to half unit cell thick nucleation islands in the Yoneda wing with correlation length scale of 7.1 and 8.2 nm, at growth temperatures (Tg) of 200 and 248 °C, respectively. At about 1.1 nm (two unit cells) of growth thickness nucleation islands coarsen, grow, and the intensity of correlated scattering peak increased at the correlation length scale of 8.0 and 8.7 nm for Tg = 200 and 248 °C, respectively. The correlated peaks at both growth temperatures can be fitted with a single peak Lorentzian function, which support single mode growth. Post-growth in situ x-ray reflectivity measurements indicate a growth rate of ~0.36 Å/cycle consistent with the growth rate previously reported for self-limited InN growth in a commercial ALEp reactor. Consistent with the in situ GISAXS study, ex situ atomic force microscopy power spectral density measurements also indicate single mode growth. Electrical characterization of the resulting film revealed an electron mobility of 50 cm2/V s for a 5.6 nm thick InN film on a-plane sapphire, which is higher than the previously reported mobility of much thicker InN films grown at higher temperature by molecular beam epitaxy directly on sapphire. These early results indicated that in situ synchrotron x-ray study of the epitaxial growth kinetics of InN films is a very powerful method to

  18. Photoelectrochemical behavior of Al{sub x}In{sub 1−x}N thin films grown by plasma-assisted dual source reactive evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Alizadeh, M., E-mail: alizadeh_kozerash@yahoo.com; Ganesh, V.; Pandikumar, A.; Goh, B.T.; Azianty, S.; Huang, N.M.; Rahman, S.A., E-mail: saadah@um.edu.my

    2016-06-15

    In this work the dependence of photoelectrochemical (PEC) behavior of Al{sub x}In{sub 1−x}N (0.48 ≤x ≤ 0.66) thin films grown by plasma-assisted dual source reactive evaporation, on the plasma dynamics and the alloys properties was studied. The influence of nitrogen flow rate on the compositional, morphological, structural and optical properties of the as-prepared films were investigated using X-ray photoelectron spectroscopy (XPS), Field emission scanning electron microscopy (FESEM), micro Raman spectroscopy and UV–vis spectroscopy. The PEC study of the as-grown Al{sub x}In{sub 1−x}N thin films targeted for water splitting application were performed in the presence of simulated solar irradiation of AM 1.5G (100 mW/cm{sup 2}). The PEC results revealed that the photocurrent for the Al{sub x}In{sub 1−x}N thin film grown at nitrogen flow rate of 80 sccm is ∼10-fold higher than the dark current. From the Mott–Schottky (MS) plots it was deduced that by increasing N{sub 2} flow rate up to 80 sccm, the flat band potential shifts toward more negative values. The good photoelectrochemical behavior of Al{sub x}In{sub 1−x}N thin films showed that this material could be a potential candidate for PEC water splitting. - Highlights: • Al{sub x}In{sub 1−x}N films were grown by Plasma-aided dual source reactive evaporation. • Effect of nitrogen flow rate on the films properties was investigated. • The band gap of the films decreased from 2.33 to 1.92 eV. • A good photoelectrochemical behavior of the Al{sub x}In{sub 1−x}N thin films was shown. • The photocurrent for the Al{sub 0.55}In{sub 0.45}N films is ∼10-fold higher than dark current.

  19. Dependence of surface-enhanced infrared absorption (SEIRA) enhancement and spectral quality on the choice of underlying substrate: a closer look at silver (Ag) films prepared by physical vapor deposition (PVD).

    Science.gov (United States)

    Killian, Michelle M; Villa-Aleman, Eliel; Sun, Zhelin; Crittenden, Scott; Leverette, Chad L

    2011-03-01

    Silver (Ag) films of varying thickness were simultaneously deposited using physical vapor deposition (PVD) onto six infrared (IR) substrates (BaF(2), CaF(2), Ge, AMTIR, KRS-5, and ZnSe) in order to correlate the morphology of the deposited film with optimal SEIRA response and spectral band symmetry and quality. Significant differences were observed in the surface morphology of the deposited silver films, the degree of enhancement provided, and the spectral appearance of para-nitrobenzoic acid (PNBA) cast films for each silver-coated substrate. These differences were attributed to each substrate's chemical properties, which dictate the morphology of the Ag film and ultimately determine the spectral appearance of the adsorbed analyte and the magnitude of SEIRA enhancement. Routine SEIRA enhancement factors (EFs) for all substrates were between 5 and 150. For single-step Ag depositions, the following ranking identifies the greatest SEIRA enhancement factor and the maximum absorption of the 1345 cm(-1) spectral marker of PNBA at the optimal silver thickness for each substrate: BaF(2) (EF = 85 ± 19, 0.059 A, 10 nm Ag) > CaF(2) (EF = 75 ± 30, 0.052 A, 10 nm Ag) > Ge (EF = 45 ± 8, 0.019 A, 5 nm Ag) > AMTIR (EF = 38 ± 8, 0.024 A, 15 nm Ag) > KRS-5 (EF = 24 ± 1, 0.015 A, 12 nm Ag) > ZnSe (EF = 9 ± 5, 0.008 A, 8 nm Ag). A two-step deposition provides 59% larger EFs than single-step depositions of Ag on CaF(2). A maximum EF of 147 was calculated for a cast film of PNBA (surface coverage = 341 ng/cm(2)) on a 10 nm two-step Ag film on CaF(2) (0.102 A, 1345 cm(-1) symmetric NO(2) stretching band). The morphology of the two-step Ag film has smaller particles and greater particle density than the single-step Ag film.

  20. PHYSICS

    CERN Multimedia

    J. Incandela

    The all-plenary format of the CMS week in Cyprus gave the opportunity to the conveners of the physics groups to present the plans of each physics analysis group for tackling early physics analyses. The presentations were complete, so all are encouraged to browse through them on the Web. There is a wealth of information on what is going on, by whom and on what basis and priority. The CMS week was followed by two CMS “physics events”, the ICHEP08 days and the physics days in July. These were two weeks dedicated to either the approval of all the results that would be presented at ICHEP08, or to the review of all the other Monte-Carlo based analyses that were carried out in the context of our preparations for analysis with the early LHC data (the so-called “2008 analyses”). All this was planned in the context of the beginning of a ramp down of these Monte Carlo efforts, in anticipation of data.  The ICHEP days are described below (agenda and talks at: http://indic...

  1. PHYSICS

    CERN Multimedia

    Joe Incandela

    There have been two plenary physics meetings since the December CMS week. The year started with two workshops, one on the measurements of the Standard Model necessary for “discovery physics” as well as one on the Physics Analysis Toolkit (PAT). Meanwhile the tail of the “2007 analyses” is going through the last steps of approval. It is expected that by the end of January all analyses will have converted to using the data from CSA07 – which include the effects of miscalibration and misalignment. January Physics Days The first Physics Days of 2008 took place on January 22-24. The first two days were devoted to comprehensive re¬ports from the Detector Performance Groups (DPG) and Physics Objects Groups (POG) on their planning and readiness for early data-taking followed by approvals of several recent studies. Highlights of POG presentations are included below while the activities of the DPGs are covered elsewhere in this bulletin. January 24th was devo...

  2. A study on vapor explosions

    International Nuclear Information System (INIS)

    Takagi, N.; Shoji, M.

    1979-01-01

    An experimental study was carried out for vapor explosions of molten tin falling in water. For various initial metal temperatures and subcooling of water, transient pressure of the explosions, relative frequency of the explosions and the position where the explosions occur were measured in detail. The influence of ambient pressure was also investigated. From the results, it was concluded that the vapor explosion is closely related to the collapse of a vapor film around the molten metal. (author)

  3. Physics

    CERN Document Server

    Cullen, Katherine

    2005-01-01

    Defined as the scientific study of matter and energy, physics explains how all matter behaves. Separated into modern and classical physics, the study attracts both experimental and theoretical physicists. From the discovery of the process of nuclear fission to an explanation of the nature of light, from the theory of special relativity to advancements made in particle physics, this volume profiles 10 pioneers who overcame tremendous odds to make significant breakthroughs in this heavily studied branch of science. Each chapter contains relevant information on the scientist''s childhood, research, discoveries, and lasting contributions to the field and concludes with a chronology and a list of print and Internet references specific to that individual.

  4. Nuclear system vaporization

    International Nuclear Information System (INIS)

    Bougault, R.; Brou, R.; Colin, J.; Cussol, D.; Durand, D.; Le Brun, C.; Lecolley, J.F.; Lopez, O.; Louvel, M.; Nakagawa, T.; Peter, J.; Regimbart, R.; Steckmeyer, J.C.; Tamain, B.; Vient, E.; Yuasa-Nakagawa, K.; Wieloch, A.

    1998-01-01

    A particular case of the hot nuclei de-excitation is the total nuclear dislocation into light particles (n, p, d, t, 3 He and α). Such events were first observed at bombarding energies lower than 100 MeV/nucleon due to high detection performances of the INDRA multidetector. The light system Ar + Ni was studied at several bombarding energies ranging from 32 to 95 MeV/nucleon. The events associated to a total vaporization of the system occur above the energy threshold of ∼ 50 MeV/nucleon. A study of the form of these events shows that we have essentially two sources. The excitation energy of these sources may be determined by means of the kinematic properties of their de-excitation products. A preliminary study results in excitation energy values of the order 10 - 14 MeV/nucleon. The theoretical calculation based on a statistical model modified to take into account high excitation energies and excited levels in the lightest nuclei predicts that the vaporization of the two partner nuclei in the Ar + Ni system takes place when the excitation energy exceeds 12 MeV/nucleon what is qualitatively in agreement with the values deduced from calorimetric analysis

  5. PHYSICS

    CERN Multimedia

    Guenther Dissertori

    The time period between the last CMS week and this June was one of intense activity with numerous get-together targeted at addressing specific issues on the road to data-taking. The two series of workshops, namely the “En route to discoveries” series and the “Vertical Integration” meetings continued.   The first meeting of the “En route to discoveries” sequence (end 2007) had covered the measurements of the Standard Model signals as necessary prerequisite to any claim of signals beyond the Standard Model. The second meeting took place during the Feb CMS week and concentrated on the commissioning of the Physics Objects, whereas the third occurred during the April Physics Week – and this time the theme was the strategy for key new physics signatures. Both of these workshops are summarized below. The vertical integration meetings also continued, with two DPG-physics get-togethers on jets and missing ET and on electrons and photons. ...

  6. PHYSICS

    CERN Multimedia

    Chris Hill

    2012-01-01

    The months that have passed since the last CMS Bulletin have been a very busy and exciting time for CMS physics. We have gone from observing the very first 8TeV collisions produced by the LHC to collecting a dataset of the collisions that already exceeds that recorded in all of 2011. All in just a few months! Meanwhile, the analysis of the 2011 dataset and publication of the subsequent results has continued. These results come from all the PAGs in CMS, including searches for the Higgs boson and other new phenomena, that have set the most stringent limits on an ever increasing number of models of physics beyond the Standard Model including dark matter, Supersymmetry, and TeV-scale gravity scenarios, top-quark physics where CMS has overtaken the Tevatron in the precision of some measurements, and bottom-quark physics where CMS made its first discovery of a new particle, the Ξ*0b baryon (candidate event pictured below). Image 2:  A Ξ*0b candidate event At the same time POGs and PAGs...

  7. PHYSICS

    CERN Multimedia

    D. Acosta

    2011-01-01

    Since the last CMS Week, all physics groups have been extremely active on analyses based on the full 2010 dataset, with most aiming for a preliminary measurement in time for the winter conferences. Nearly 50 analyses were approved in a “marathon” of approval meetings during the first two weeks of March, and the total number of approved analyses reached 90. The diversity of topics is very broad, including precision QCD, Top, and electroweak measurements, the first observation of single Top production at the LHC, the first limits on Higgs production at the LHC including the di-tau final state, and comprehensive searches for new physics in a wide range of topologies (so far all with null results unfortunately). Most of the results are based on the full 2010 pp data sample, which corresponds to 36 pb-1 at √s = 7 TeV. This report can only give a few of the highlights of a very rich physics program, which is listed below by physics group...

  8. Bionanomaterials and Bioinspired Nanostructures for Selective Vapor Sensing

    Science.gov (United States)

    Potyrailo, Radislav; Naik, Rajesh R.

    2013-07-01

    At present, monitoring of air at the workplace, in urban environments, and on battlefields; exhaled air from medical patients; air in packaged food containers; and so forth can be accomplished with different types of analytical instruments. Vapor sensors have their niche in these measurements when an unobtrusive, low-power, and cost-sensitive technical solution is required. Unfortunately, existing vapor sensors often degrade their vapor-quantitation accuracy in the presence of high levels of interferences and cannot quantitate several components in complex gas mixtures. Thus, new sensing approaches with improved sensor selectivity are required. This technological task can be accomplished by the careful design of sensing materials with new performance properties and by coupling these materials with the suitable physical transducers. This review is focused on the assessment of the capabilities of bionanomaterials and bioinspired nanostructures for selective vapor sensing. We demonstrate that these sensing materials can operate with diverse transducers based on electrical, mechanical, and optical readout principles and can provide vapor-response selectivity previously unattainable by using other sensing materials. This ability for selective vapor sensing provides opportunities to significantly impact the major directions in development and application scenarios of vapor sensors.

  9. Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition

    International Nuclear Information System (INIS)

    Alevli, Mustafa; Haider, Ali; Kizir, Seda; Leghari, Shahid A.; Biyikli, Necmi

    2016-01-01

    GaN films grown by hollow cathode plasma-assisted atomic layer deposition using trimethylgallium (TMG) and triethylgallium (TEG) as gallium precursors are compared. Optimized and saturated TMG/TEG pulse widths were used in order to study the effect of group-III precursors. The films were characterized by grazing incidence x-ray diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry. Refractive index follows the same trend of crystalline quality, mean grain, and crystallite sizes. GaN layers grown using TMG precursor exhibited improved structural and optical properties when compared to GaN films grown with TEG precursor

  10. Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Alevli, Mustafa, E-mail: mustafaalevli@marmara.edu.tr [Department of Physics, Marmara University, Göztepe Kadıköy, 34722 İstanbul (Turkey); Haider, Ali; Kizir, Seda; Leghari, Shahid A.; Biyikli, Necmi, E-mail: biyikli@unam.bilkent.edu.tr [Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, 06800 Ankara, Turkey and National Nanotechnology Research Center (UNAM), Bilkent University, Bilkent, 06800 Ankara (Turkey)

    2016-01-15

    GaN films grown by hollow cathode plasma-assisted atomic layer deposition using trimethylgallium (TMG) and triethylgallium (TEG) as gallium precursors are compared. Optimized and saturated TMG/TEG pulse widths were used in order to study the effect of group-III precursors. The films were characterized by grazing incidence x-ray diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry. Refractive index follows the same trend of crystalline quality, mean grain, and crystallite sizes. GaN layers grown using TMG precursor exhibited improved structural and optical properties when compared to GaN films grown with TEG precursor.

  11. Chemical vapor composites (CVC)

    International Nuclear Information System (INIS)

    Reagan, P.

    1993-01-01

    The Chemical Vapor Composite, CVC trademark , process fabricates composite material by simply mixing particles (powders and or fibers) with CVD reactants which are transported and co-deposited on a hot substrate. A key feature of the CVC process is the control provided by varing the density, geometry (aspect ratio) and composition of the entrained particles in the matrix material, during deposition. The process can fabricate composite components to net shape (± 0.013 mm) on a machined substrate in a single step. The microstructure of the deposit is described and several examples of different types of particles in the matrix are illustrated. Mechanical properties of SiC composite material fabricated with SiC powder and fiber will be presented. Several examples of low cost ceramic composite products will be shown. (orig.)

  12. Iron bromide vapor laser

    Science.gov (United States)

    Sukhanov, V. B.; Shiyanov, D. V.; Trigub, M. V.; Dimaki, V. A.; Evtushenko, G. S.

    2016-03-01

    We have studied the characteristics of a pulsed gas-discharge laser on iron bromide vapor generating radiation with a wavelength of 452.9 nm at a pulse repetition frequency (PRF) of 5-30 kHz. The maximum output power amounted to 10 mW at a PRF within 5-15 kHz for a voltage of 20-25 kV applied to electrodes of the discharge tube. Addition of HBr to the medium produced leveling of the radial profile of emission. Initial weak lasing at a wavelength of 868.9 nm was observed for the first time, which ceased with buildup of the main 452.9-nm line.

  13. PHYSICS

    CERN Multimedia

    Darin Acosta

    2010-01-01

    The collisions last year at 900 GeV and 2.36 TeV provided the long anticipated collider data to the CMS physics groups. Quite a lot has been accomplished in a very short time. Although the delivered luminosity was small, CMS was able to publish its first physics paper (with several more in preparation), and commence the commissioning of physics objects for future analyses. Many new performance results have been approved in advance of this CMS Week. One remarkable outcome has been the amazing agreement between out-of-the-box data with simulation at these low energies so early in the commissioning of the experiment. All of this is testament to the hard work and preparation conducted beforehand by many people in CMS. These analyses could not have happened without the dedicated work of the full collaboration on building and commissioning the detector, computing, and software systems combined with the tireless work of many to collect, calibrate and understand the data and our detector. To facilitate the efficien...

  14. PHYSICS

    CERN Multimedia

    D. Acosta

    2010-01-01

    The Physics Groups are actively engaged on analyses of the first data from the LHC at 7 TeV, targeting many results for the ICHEP conference taking place in Paris this summer. The first large batch of physics approvals is scheduled for this CMS Week, to be followed by four more weeks of approvals and analysis updates leading to the start of the conference in July. Several high priority analysis areas were organized into task forces to ensure sufficient coverage from the relevant detector, object, and analysis groups in the preparation of these analyses. Already some results on charged particle correlations and multiplicities in 7 TeV minimum bias collisions have been approved. Only one small detail remains before ICHEP: further integrated luminosity delivered by the LHC! Beyond the Standard Model measurements that can be done with these data, the focus changes to the search for new physics at the TeV scale and for the Higgs boson in the period after ICHEP. Particle Flow The PFT group is focusing on the ...

  15. PHYSICS

    CERN Multimedia

    the PAG conveners

    2011-01-01

    The delivered LHC integrated luminosity of more than 1 inverse femtobarn by summer and more than 5 by the end of 2011 has been a gold mine for the physics groups. With 2011 data, we have submitted or published 14 papers, 7 others are in collaboration-wide review, and 75 Physics Analysis Summaries have been approved already. They add to the 73 papers already published based on the 2010 and 2009 datasets. Highlights from each physics analysis group are described below. Heavy ions Many important results have been obtained from the first lead-ion collision run in 2010. The published measurements include the first ever indications of Υ excited state suppression (PRL synopsis), long-range correlation in PbPb, and track multiplicity over a wide η range. Preliminary results include the first ever measurement of isolated photons (showing no modification), J/ψ suppression including the separation of the non-prompt component, further study of jet fragmentation, nuclear modification factor...

  16. PHYSICS

    CERN Multimedia

    L. Demortier

    Physics-wise, the CMS week in December was dominated by discussions of the analyses that will be carried out in the “next six months”, i.e. while waiting for the first LHC collisions.  As presented in December, analysis approvals based on Monte Carlo simulation were re-opened, with the caveat that for this work to be helpful to the goals of CMS, it should be carried out using the new software (CMSSW_2_X) and associated samples.  By the end of the week, the goal for the physics groups was set to be the porting of our physics commissioning methods and plans, as well as the early analyses (based an integrated luminosity in the range 10-100pb-1) into this new software. Since December, the large data samples from CMSSW_2_1 were completed. A big effort by the production group gave a significant number of events over the end-of-year break – but also gave out the first samples with the fast simulation. Meanwhile, as mentioned in December, the arrival of 2_2 meant that ...

  17. PHYSICS

    CERN Multimedia

    C. Hill

    2012-01-01

      2012 has started off as a very busy year for the CMS Physics Groups. Planning for the upcoming higher luminosity/higher energy (8 TeV) operation of the LHC and relatively early Rencontres de Moriond are the high-priority activities for the group at the moment. To be ready for the coming 8-TeV data, CMS has made a concerted effort to perform and publish analyses on the 5 fb−1 dataset recorded in 2011. This has resulted in the submission of 16 papers already, including nine on the search for the Higgs boson. In addition, a number of preliminary results on the 2011 dataset have been released to the public. The Exotica and SUSY groups approved several searches for new physics in January, such as searches for W′ and exotic highly ionising particles. These were highlighted at a CERN seminar given on 24th  January. Many more analyses, from all the PAGs, including the newly formed SMP (Standard Model Physics) and FSQ (Forward and Small-x QCD), were approved in February. The ...

  18. PHYSICS

    CERN Document Server

    C. Hill

    2012-01-01

      The period since the last CMS Bulletin has been historic for CMS Physics. The pinnacle of our physics programme was an observation of a new particle – a strong candidate for a Higgs boson – which has captured worldwide interest and made a profound impact on the very field of particle physics. At the time of the discovery announcement on 4 July, 2012, prominent signals were observed in the high-resolution H→γγ and H→ZZ(4l) modes. Corroborating excess was observed in the H→W+W– mode as well. The fermionic channel analyses (H→bb, H→ττ), however, yielded less than the Standard Model (SM) expectation. Collectively, the five channels established the signal with a significance of five standard deviations. With the exception of the diphoton channel, these analyses have all been updated in the last months and several new channels have been added. With improved analyses and more than twice the i...

  19. Vapor-droplet flow equations

    International Nuclear Information System (INIS)

    Crowe, C.T.

    1975-01-01

    General features of a vapor-droplet flow are discussed and the equations expressing the conservation of mass, momentum, and energy for the vapor, liquid, and mixture using the control volume approach are derived. The phenomenological laws describing the exchange of mass, momentum, and energy between phases are also reviewed. The results have application to development of water-dominated geothermal resources

  20. Tritium-gas/water-vapor monitor. Tests and evaluation

    International Nuclear Information System (INIS)

    Jalbert, R.A.

    1982-07-01

    A tritium gas/water-vapor monitor was designed and built by the Health Physics Group at the Los Alamos National Laboratory. In its prototype configuration, the monitor took the shape of two separate instruments: a (total) tritium monitor and a water-vapor monitor. Both instruments were tested and evaluated. The tests of the (total) tritium monitor, basically an improved version of the standard flow-through ion-chamber instrument, are briefly reported here and more completely elsewhere. The tests of the water-vapor monitor indicated that the novel approach used to condense water vapor for scintillation counting has a number of serious drawbacks and that further development of the instrument is unwarranted

  1. Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Dimakis, E.; Iliopoulos, E.; Tsagaraki, K.; Kehagias, Th.; Komninou, Ph.; Georgakilas, A.

    2005-01-01

    The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of the Stranski-Krastanov for substrate temperatures between 350 and 520 deg. C. The number of monolayers of initial two-dimensional growth, in the case of Stranski-Krastanov mode, varies monotonically with substrate temperature, from 2 ML at 400 deg. C to about 12 ML at 500 deg. C. The evolution and coalescence of nucleated islands were also investigated as a function of substrate temperature. It was found that at higher temperature their coalescence is inhibited leading to porous-columnar InN thin films, which exhibit growth rates higher than the nominal value. Therefore, in order to achieve continuous InN layers on GaN (0001) a two-step growth approach is introduced. In that approach, InN is nucleated at low temperatures on GaN and the growth continues until full coalescence of the nucleated islands. Subsequently, this nucleation layer is overgrown at higher substrate temperature in order to achieve high-quality continuous films. The InN films grown by the two-step method were investigated by x-ray diffraction, Hall-effect measurements, and

  2. Uptake of mercury vapor by wheat. An assimilation model

    International Nuclear Information System (INIS)

    Browne, C.L.; Fang, S.C.

    1978-01-01

    Using a whole-plant chamber and 203 Hg-labeled mercury, a quantitative study was made of the effect of environmental parameters on the uptake, by wheat (Triticum aestivum), of metallic mercury vapor, an atmospheric pollutant. Factors were examined in relation to their influence on components of the gas-assimilation model, U(Hg) = (C/sub A' -- C/sub L')/(r/sub L.Hg/ + r/sub M.Hg/) where U(Hg) is the rate of mercury uptake per unit leaf surface, C/sub A'/ is the ambient mercury vapor concentration, C/sub L'/ is the mercury concentration at immobilization sites within the plant (assumed to be zero), r/sub L.Hg/ is the total leaf resistance to mercury vapor exchange, and r/sub M.Hg/ is a residual term to account for unexplained physical and biochemical resistances to mercury vapor uptake. Essentially all mercury vapor uptake was confined to the leaves. r/sub L.Hg/ was particularly influenced by illumination (0 to 12.8 klux), but unaffected by ambient temperature (17 to 33 0 C) and mercury vapor concentration (0 to 40 μg m -3 ). The principal limitation to mercury vapor uptake was r/sub M.Hg/, which was linearly related to leaf temperature, but unaffected by mercury vapor concentration and illumination, except for apparent high values in darkness. Knowing C/sub A'/ and estimating r/sub L.Hg/ and r/sub M.Hg/ from experimental data, mercury vapor uptake by wheat in light was accurately predicted for several durations of exposure using the above model

  3. Vapor pressure and enthalpy of vaporization of aliphatic propanediamines

    International Nuclear Information System (INIS)

    Verevkin, Sergey P.; Chernyak, Yury

    2012-01-01

    Highlights: ► We measured vapor pressure of four aliphatic 1,3-diamines. ► Vaporization enthalpies at 298 K were derived. ► We examined consistency of new and available data in the literature. ► A group-contribution method for prediction was developed. - Abstract: Vapor pressures of four aliphatic propanediamines including N-methyl-1,3-propanediamine (MPDA), N,N-dimethyl-1,3-propanediamine (DMPDA), N,N-diethyl-1,3-propanediamine (DEPDA) and N,N,N′,N′-tetramethyl-1,3-propanediamine (4MPDA) were measured using the transpiration method. The vapor pressures developed in this work and reported in the literature were used to derive molar enthalpy of vaporization values at the reference temperature 298.15 K. An internal consistency check of the enthalpy of vaporization was performed for the aliphatic propanediamines studied in this work. A group-contribution method was developed for the validation and prediction vaporization enthalpies of amines and diamines.

  4. A Citizen's Guide to Vapor Intrusion Mitigation

    Science.gov (United States)

    This guide describes how vapor intrusion is the movement of chemical vapors from contaminated soil and groundwater into nearby buildings.Vapors primarily enter through openings in the building foundation or basement walls.

  5. Vapor pressure measured with inflatable plastic bag

    Science.gov (United States)

    1965-01-01

    Deflated plastic bag in a vacuum chamber measures initial low vapor pressures of materials. The bag captures the test sample vapors and visual observation of the vapor-inflated bag under increasing external pressures yields pertinent data.

  6. PHYSICS

    CERN Multimedia

    J. D'Hondt

    The Electroweak and Top Quark Workshop (16-17th of July) A Workshop on Electroweak and Top Quark Physics, dedicated on early measurements, took place on 16th-17th July. We had more than 40 presentations at the Workshop, which was an important milestone for 2007 physics analyses in the EWK and TOP areas. The Standard Model has been tested empirically by many previous experiments. Observables which are nowadays known with high precision will play a major role for data-based CMS calibrations. A typical example is the use of the Z to monitor electron and muon reconstruction in di-lepton inclusive samples. Another example is the use of the W mass as a constraint for di-jets in the kinematic fitting of top-quark events, providing information on the jet energy scale. The predictions of the Standard Model, for what concerns proton collisions at the LHC, are accurate to a level that the production of W/Z and top-quark events can be used as a powerful tool to commission our experiment. On the other hand the measure...

  7. PHYSICS

    CERN Multimedia

    Christopher Hill

    2013-01-01

    Since the last CMS Bulletin, the CMS Physics Analysis Groups have completed more than 70 new analyses, many of which are based on the complete Run 1 dataset. In parallel the Snowmass whitepaper on projected discovery potential of CMS for HL-LHC has been completed, while the ECFA HL-LHC future physics studies has been summarised in a report and nine published benchmark analyses. Run 1 summary studies on b-tag and jet identification, quark-gluon discrimination and boosted topologies have been documented in BTV-13-001 and JME-13-002/005/006, respectively. The new tracking alignment and performance papers are being prepared for submission as well. The Higgs analysis group produced several new results including the search for ttH with H decaying to ZZ, WW, ττ+bb (HIG-13-019/020) where an excess of ~2.5σ is observed in the like-sign di-muon channel, and new searches for high-mass Higgs bosons (HIG-13-022). Search for invisible Higgs decays have also been performed both using the associ...

  8. PHYSICS

    CERN Multimedia

    C. Hill

    2013-01-01

    In the period since the last CMS Bulletin, the LHC – and CMS – have entered LS1. During this time, CMS Physics Analysis Groups have performed more than 40 new analyses, many of which are based on the complete 8 TeV dataset delivered by the LHC in 2012 (and in some cases on the full Run 1 dataset). These results were shown at, and well received by, several high-profile conferences in the spring of 2013, including the inaugural meeting of the Large Hadron Collider    Physics Conference (LHCP) in Barcelona, and the 26th International Symposium on Lepton Photon Interactions at High Energies (LP) in San Francisco. In parallel, there have been significant developments in preparations for Run 2 of the LHC and on “future physics” studies for both Phase 1 and Phase 2 upgrades of the CMS detector. The Higgs analysis group produced five new results for LHCP including a new H-to-bb search in VBF production (HIG-13-011), ttH with H to γ&ga...

  9. PHYSICS

    CERN Multimedia

    C. Hill

    2013-01-01

    The period since the last CMS bulletin has seen the end of proton collisions at a centre-of-mass energy 8 TeV, a successful proton-lead collision run at 5 TeV/nucleon, as well as a “reference” proton run at 2.76 TeV. With these final LHC Run 1 datasets in hand, CMS Physics Analysis Groups have been busy analysing these data in preparation for the winter conferences. Moreover, despite the fact that the pp run only concluded in mid-December (and there was consequently less time to complete data analyses), CMS again made a strong showing at the Rencontres de Moriond in La Thuile (EW and QCD) where nearly 40 new results were presented. The highlight of these preliminary results was the eagerly anticipated updated studies of the properties of the Higgs boson discovered in July of last year. Meanwhile, preparations for Run 2 and physics performance studies for Phase 1 and Phase 2 upgrade scenarios are ongoing. The Higgs analysis group produced updated analyses on the full Run 1 dataset (~25 f...

  10. n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Han, Sang-Heon; Mauze, Akhil; Ahmadi, Elaheh; Mates, Tom; Oshima, Yuichi; Speck, James S.

    2018-04-01

    Ge and Sn as n-type dopants in (001) β-Ga2O3 films were investigated using plasma-assisted molecular beam epitaxy. The Ge concentration showed a strong dependence on the growth temperature, whereas the Sn concentration remains independent of the growth temperature. The maximum growth temperature at which a wide range of Ge concentrations (from 1017 to 1020 cm-3) could be achieved was 675 °C while the same range of Sn concentration could be achieved at growth temperature of 750 °C. Atomic force microscopy results revealed that higher growth temperature shows better surface morphology. Therefore, our study reveals a tradeoff between higher Ge doping concentration and high quality surface morphology on (001) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy. The Ge doped films had an electron mobility of 26.3 cm2 V-1 s-1 at the electron concentration of 6.7 × 1017 cm-3 whereas the Sn doped films had an electron mobility of 25.3 cm2 V-1 s-1 at the electron concentration of 1.1 × 1018 cm-3.

  11. Passive vapor extraction feasibility study

    International Nuclear Information System (INIS)

    Rohay, V.J.

    1994-01-01

    Demonstration of a passive vapor extraction remediation system is planned for sites in the 200 West Area used in the past for the disposal of waste liquids containing carbon tetrachloride. The passive vapor extraction units will consist of a 4-in.-diameter pipe, a check valve, a canister filled with granular activated carbon, and a wind turbine. The check valve will prevent inflow of air that otherwise would dilute the soil gas and make its subsequent extraction less efficient. The granular activated carbon is used to adsorb the carbon tetrachloride from the air. The wind turbine enhances extraction rates on windy days. Passive vapor extraction units will be designed and operated to meet all applicable or relevant and appropriate requirements. Based on a cost analysis, passive vapor extraction was found to be a cost-effective method for remediation of soils containing lower concentrations of volatile contaminants. Passive vapor extraction used on wells that average 10-stdft 3 /min air flow rates was found to be more cost effective than active vapor extraction for concentrations below 500 parts per million by volume (ppm) of carbon tetrachloride. For wells that average 5-stdft 3 /min air flow rates, passive vapor extraction is more cost effective below 100 ppm

  12. The lithium vapor box divertor

    International Nuclear Information System (INIS)

    Goldston, R J; Schwartz, J; Myers, R

    2016-01-01

    It has long been recognized that volumetric dissipation of the plasma heat flux from a fusion power system is preferable to its localized impingement on a material surface. Volumetric dissipation mitigates both the anticipated very high heat flux and intense particle-induced damage due to sputtering. Recent projections to a tokamak demonstration power plant suggest an immense upstream parallel heat flux, of order 20 GW m −2 , implying that fully detached operation may be a requirement for the success of fusion power. Building on pioneering work on the use of lithium by Nagayama et al and by Ono et al as well as earlier work on the gas box divertor by Watkins and Rebut, we present here a concept for a lithium vapor box divertor, in which lithium vapor extracts momentum and energy from a fusion-power-plant divertor plasma, using fully volumetric processes. At the high powers and pressures that are projected this requires a high density of lithium vapor, which must be isolated from the main plasma in order to avoid lithium build-up on the chamber walls or in the plasma. Isolation is achieved through a powerful multi-box differential pumping scheme available only for condensable vapors. The preliminary box-wise calculations are encouraging, but much more work is required to demonstrate the practical viability of this scheme, taking into account at least 2D plasma and vapor flows within and between the vapor boxes and out of the vapor boxes to the main plasma. (paper)

  13. Dimers in nucleating vapors

    Science.gov (United States)

    Lushnikov, A. A.; Kulmala, M.

    1998-09-01

    The dimer stage of nucleation may affect considerably the rate of the nucleation process at high supersaturation of the nucleating vapor. Assuming that the dimer formation limits the nucleation rate, the kinetics of the particle formation-growth process is studied starting with the definition of dimers as bound states of two associating molecules. The partition function of dimer states is calculated by summing the Boltzmann factor over all classical bound states, and the equilibrium population of dimers is found for two types of intermolecular forces: the Lennard-Jones (LJ) and rectangular well+hard core (RW) potentials. The principle of detailed balance is used for calculating the evaporation rate of dimers. The kinetics of the particle formation-growth process is then investigated under the assumption that the trimers are stable with respect to evaporation and that the condensation rate is a power function of the particle mass. If the power exponent λ=n/(n+1) (n is a non-negative integer), the kinetics of the process is described by a finite set of moments of particle mass distribution. When the characteristic time of the particle formation by nucleation is much shorter than that of the condensational growth, n+2 universal functions of a nondimensional time define the kinetic process. These functions are calculated for λ=2/3 (gas-to-particle conversion in the free molecular regime) and λ=1/2 (formation of islands on surfaces).

  14. Vapor plume oscillation mechanisms in transient keyhole during tandem dual beam fiber laser welding

    Science.gov (United States)

    Chen, Xin; Zhang, Xiaosi; Pang, Shengyong; Hu, Renzhi; Xiao, Jianzhong

    2018-01-01

    Vapor plume oscillations are common physical phenomena that have an important influence on the welding process in dual beam laser welding. However, until now, the oscillation mechanisms of vapor plumes remain unclear. This is primarily because mesoscale vapor plume dynamics inside a millimeter-scale, invisible, and time-dependent keyhole are difficult to quantitatively observe. In this paper, based on a developed three-dimensional (3D) comprehensive model, the vapor plume evolutions in a dynamical keyhole are directly simulated in tandem dual beam, short-wavelength laser welding. Combined with the vapor plume behaviors outside the keyhole observed by high-speed imaging, the vapor plume oscillations in dynamical keyholes at different inter-beam distances are the first, to our knowledge, to be quantitatively analyzed. It is found that vapor plume oscillations outside the keyhole mainly result from vapor plume instabilities inside the keyhole. The ejection velocity at the keyhole opening and dynamical behaviors outside the keyhole of a vapor plume both violently oscillate with the same order of magnitude of high frequency (several kHz). Furthermore, the ejection speed at the keyhole opening and ejection area outside the keyhole both decrease as the beam distance increases, while the degree of vapor plume instability first decreases and then increases with increasing beam distance from 0.6 to 1.0 mm. Moreover, the oscillation mechanisms of a vapor plume inside the dynamical keyhole irradiated by dual laser beams are investigated by thoroughly analyzing the vapor plume occurrence and flow process. The vapor plume oscillations in the dynamical keyhole are found to mainly result from violent local evaporations and severe keyhole geometry variations. In short, the quantitative method and these findings can serve as a reference for further understanding of the physical mechanisms in dual beam laser welding and of processing optimizations in industrial applications.

  15. PHYSICS

    CERN Multimedia

    V.Ciulli

    2011-01-01

    The main programme of the Physics Week held between 16th and 20th May was a series of topology-oriented workshops on di-leptons, di-photons, inclusive W, and all-hadronic final states. The goal of these workshops was to reach a common understanding for the set of objects (ID, cleaning...), the handling of pile-up, calibration, efficiency and purity determination, as well as to revisit critical common issues such as the trigger. Di-lepton workshop Most analysis groups use a di-lepton trigger or a combination of single and di-lepton triggers in 2011. Some groups need to collect leptons with as low PT as possible with strong isolation and identification requirements as for Higgs into WW at low mass, others with intermediate PT values as in Drell-Yan studies, or high PT as in the Exotica group. Electron and muon reconstruction, identification and isolation, was extensively described in the workshop. For electrons, VBTF selection cuts for low PT and HEEP cuts for high PT were discussed, as well as more complex d...

  16. Eddy transport of water vapor in the Martian atmosphere

    Science.gov (United States)

    Murphy, J. R.; Haberle, Robert M.

    1993-01-01

    Viking orbiter measurements of the Martian atmosphere suggest that the residual north polar water-ice cap is the primary source of atmospheric water vapor, which appears at successively lower northern latitudes as the summer season progresses. Zonally symmetric studies of water vapor transport indicate that the zonal mean meridional circulation is incapable of transporting from north polar regions to low latitudes the quantity of water vapor observed. This result has been interpreted as implying the presence of nonpolar sources of water. Another possibility is the ability of atmospheric wave motions, which are not accounted for in a zonally symmetric framework, to efficiently accomplish the transport from a north polar source to the entirety of the Northern Hemisphere. The ability or inability of the full range of atmospheric motions to accomplish this transport has important implications regarding the questions of water sources and sinks on Mars: if the full spectrum of atmospheric motions proves to be incapable of accomplishing the transport, it strengthens arguments in favor of additional water sources. Preliminary results from a three dimensional atmospheric dynamical/water vapor transport numerical model are presented. The model accounts for the physics of a subliming water-ice cap, but does not yet incorporate recondensation of this sublimed water. Transport of vapor away from this water-ice cap in this three dimensional framework is compared with previously obtained zonally symmetric (two dimensional) results to quantify effects of water vapor transport by atmospheric eddies.

  17. Tubing For Sampling Hydrazine Vapor

    Science.gov (United States)

    Travis, Josh; Taffe, Patricia S.; Rose-Pehrsson, Susan L.; Wyatt, Jeffrey R.

    1993-01-01

    Report evaluates flexible tubing used for transporting such hypergolic vapors as those of hydrazines for quantitative analysis. Describes experiments in which variety of tubing materials, chosen for their known compatibility with hydrazine, flexibility, and resistance to heat.

  18. Vapor trap for liquid metal

    Energy Technology Data Exchange (ETDEWEB)

    Watanabe, T

    1968-05-22

    In a pipe system which transfers liquid metal, inert gas (cover gas) is packed above the surface of the liquid metal to prevent oxidization of the liquid. If the metal vapor is contained in such cover gas, the circulating system of the cover gas is blocked due to condensation of liquid metal inside the system. The present invention relates to an improvement in vapor trap to remove the metal vapor from the cover gas. The trap consists of a cylindrical outer body, an inlet nozzle which is deeply inserted inside the outer body and has a number of holes to inject the cove gas into the body, metal mesh or steel wool which covers the exterior of the nozzle and on which the condensation of the metal gas takes place, and a heater wire hich is wound around the nozzle to prevent condensation of the metal vapor at the inner peripheral side of the mesh.

  19. Vapor pressure, heat capacities, and phase transitions of tetrakis(tert-butoxy)hafnium

    Czech Academy of Sciences Publication Activity Database

    Fulem, Michal; Růžička, K.

    2011-01-01

    Roč. 311, Dec. (2011), s. 25-29 ISSN 0378-3812 Institutional research plan: CEZ:AV0Z10100521 Keywords : tetrakis(tert-butoxy)hafnium * MO precursor * vapor pressure * heat capacity * vaporization enthalpy * enthalpy of fusion Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.139, year: 2011

  20. Vapor pressures of solid and liquid xanthene and phenoxathiin from effusion and static studies

    Czech Academy of Sciences Publication Activity Database

    Monte, M.J.S.; Santos, L.M.N.B.F.; Sousa, C.A.D.; Fulem, Michal

    2008-01-01

    Roč. 53, č. 8 (2008), s. 1922-1926 ISSN 0021-9568 Institutional research plan: CEZ:AV0Z10100521 Keywords : vapor pressure * xanthene * phenoxanthiin * sublimation and vaporization enthalpy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.063, year: 2008

  1. Student Understanding of Liquid-Vapor Phase Equilibrium

    Science.gov (United States)

    Boudreaux, Andrew; Campbell, Craig

    2012-01-01

    Student understanding of the equilibrium coexistence of a liquid and its vapor was the subject of an extended investigation. Written assessment questions were administered to undergraduates enrolled in introductory physics and chemistry courses. Responses have been analyzed to document conceptual and reasoning difficulties in sufficient detail to…

  2. Vapor Pressure of Selected Aliphatic Alcohols by Ebulliometry. Part 1

    Czech Academy of Sciences Publication Activity Database

    Čenský, M.; Roháč, V.; Růžička, K.; Fulem, M.; Aim, Karel

    2010-01-01

    Roč. 298, č. 2 (2010), s. 192-198 ISSN 0378-3812 R&D Projects: GA AV ČR IAA400720710 Institutional research plan: CEZ:AV0Z40720504 Keywords : vapor pressure * ebulliometry * aliphatic alcohols Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.253, year: 2010

  3. Melting temperature, vapor density, and vapor pressure of molybdenum pentafluoride

    Energy Technology Data Exchange (ETDEWEB)

    Krause, Jr, R F; Douglas, T B [National Bureau of Standards, Washington, D.C. (USA). Inst. for Materials Research

    1977-12-01

    A sample of MoF/sub 5/ was prepared by reaction of MoF/sub 6/(g) and Mo(c). Melting curves of temperature against time established the melting temperature at zero impurity to be 318.85 K, the enthalpy of fusion to be 6.1 kJ mol/sup -1/ (+ - 5 per cent), and the cryoscopic impurity of the sample to be 0.15 mole per cent. In the presence of MoF/sub 6/(g) which was added to suppress disproportionation, the vapor density of MoF/sub 5/ over the liquid was measured by the transpiration method at 343, 363, and 383 K, the total MoF/sub 5/ that evaporated being determined by permanganate titration. The total vapor pressure of MoF/sub 5/ oligomers over the liquid was measured by a simple static method at 373 and 392 K, while melting temperatures were taken alternately to monitor possible contamination of the sample. Although the vapor pressures were adjusted for disproportionation, solution of MoF/sub 6/ in MoF/sub 5/ (1), and wall adsorption of MoF/sub 6/ their percentage uncertainty is probably several times that of the vapor densities. A combination of the two properties indicates the average extent of association of the saturated vapor to be near 2, which is the value for the dimer species (MoF/sub 5/)/sub 2/.

  4. m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates

    International Nuclear Information System (INIS)

    Armitage, R.; Horita, M.; Suda, J.; Kimoto, T.

    2007-01-01

    A series of m-plane GaN layers with the Ga beam-equivalent pressure (BEP) as the only varied parameter was grown by rf-plasma assisted molecular beam epitaxy on m-plane 4H-SiC substrates using AlN buffer layers. The smoothest growth surfaces and most complete film coalescence were found for the highest Ga BEP corresponding to the Ga droplet accumulation regime. However, better structural quality as assessed by x-ray rocking curves was observed for growth at a lower Ga BEP value below the droplet limit. The variation of rocking curve widths for planes inclined with respect to the epilayer c axis followed a different trend with Ga BEP than those of reflections parallel to the c axis. The GaN layers were found to exhibit a large residual compressive strain along the a axis

  5. One-Step Fast-Synthesized Foamlike Amorphous Co(OH)2 Flexible Film on Ti Foil by Plasma-Assisted Electrolytic Deposition as a Binder-Free Anode of a High-Capacity Lithium-Ion Battery.

    Science.gov (United States)

    Li, Tao; Nie, Xueyuan

    2018-05-23

    This research prepared an amorphous Co(OH) 2 flexible film on Ti foil using plasma-assisted electrolytic deposition within 3.5 min. Amorphous Co(OH) 2 structure was determined by X-ray diffraction and X-ray photoelectron spectroscopy. Its areal capacity testing as the binder and adhesive-free anode of a lithium-ion battery shows that the cycling capacity can reach 2000 μAh/cm 2 and remain at 930 μAh/cm 2 after 50 charge-discharge cycles, which benefits from the emerging Co(OH) 2 active material and amorphous foamlike structure. The research introduced a new method to synthesize amorphous Co(OH) 2 as the anode in a fast-manufactured low-cost lithium-ion battery.

  6. Demonstration of β-(Al x Ga1- x )2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Ahmadi, Elaheh; Koksaldi, Onur S.; Zheng, Xun; Mates, Tom; Oshima, Yuichi; Mishra, Umesh K.; Speck, James S.

    2017-07-01

    β-(Al x Ga1- x )2O3/β-Ga2O3 heterostructures were grown via plasma-assisted molecular beam epitaxy. The β-(Al x Ga1- x )2O3 barrier was partially doped by Ge to achieve a two-dimensional electron gas (2DEG) in Ga2O3. The formation of the 2DEG was confirmed by capacitance-voltage measurements. The impact of Ga-polishing on both the surface morphology and the reduction of the unintentionally incorporated Si at the growth interface was investigated using atomic force microscopy and secondary-ion mass spectrometry. Modulation doped field-effect transistors were fabricated. A maximum current density of 20 mA/mm with a pinch-off voltage of -6 V was achieved on a sample with a 2DEG sheet charge density of 1.2 × 1013 cm-2.

  7. Vapor Cartesian diver

    Science.gov (United States)

    Grebenev, Igor V.; Lebedeva, Olga V.; Polushkina, Svetlana V.

    2018-07-01

    The article proposes a new research object for a general physics course—the vapour Cartesian diver, designed to study the properties of saturated water vapour. Physics education puts great importance on the study of the saturated vapour state, as it is related to many fundamental laws and theories. For example, the temperature dependence of the saturated water vapour pressure allows the teacher to demonstrate the Le Chatelier’s principle: increasing the temperature of a system in a dynamic equilibrium favours the endothermic change. That means that increasing the temperature increases the amount of vapour present, and so increases the saturated vapour pressure. The experimental setup proposed in this paper can be used as an example of an auto-oscillatory system, based on the properties of saturated vapour. The article describes a mathematical model of physical processes that occur in the experiment, and proposes a numerical solution method for the acquired system of equations. It shows that the results of numerical simulation coincide with the self-oscillation parameters from the real experiment. The proposed installation can also be considered as a model of a thermal engine.

  8. Molecular Models for DSMC Simulations of Metal Vapor Deposition

    OpenAIRE

    Venkattraman, A; Alexeenko, Alina A

    2010-01-01

    The direct simulation Monte Carlo (DSMC) method is applied here to model the electron‐beam (e‐beam) physical vapor deposition of copper thin films. A suitable molecular model for copper‐copper interactions have been determined based on comparisons with experiments for a 2D slit source. The model for atomic copper vapor is then used in axi‐symmetric DSMC simulations for analysis of a typical e‐beam metal deposition system with a cup crucible. The dimensional and non‐dimensional mass fluxes obt...

  9. Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, Virginia R.; Nepal, Neeraj; Johnson, Scooter D.; Robinson, Zachary R.; Nath, Anindya; Kozen, Alexander C.; Qadri, Syed B.; DeMasi, Alexander; Hite, Jennifer K.; Ludwig, Karl F.; Eddy, Charles R.

    2017-05-01

    Wide bandgap semiconducting nitrides have found wide-spread application as light emitting and laser diodes and are under investigation for further application in optoelectronics, photovoltaics, and efficient power switching technologies. Alloys of the binary semiconductors allow adjustments of the band gap, an important semiconductor material characteristic, which is 6.2 eV for aluminum nitride (AlN), 3.4 eV for gallium nitride, and 0.7 eV for (InN). Currently, the highest quality III-nitride films are deposited by metalorganic chemical vapor deposition and molecular beam epitaxy. Temperatures of 900 °C and higher are required to deposit high quality AlN. Research into depositing III-nitrides with atomic layer epitaxy (ALEp) is ongoing because it is a fabrication friendly technique allowing lower growth temperatures. Because it is a relatively new technique, there is insufficient understanding of the ALEp growth mechanism which will be essential to development of the process. Here, grazing incidence small angle x-ray scattering is employed to observe the evolving behavior of the surface morphology during growth of AlN by ALEp at temperatures from 360 to 480 °C. Increased temperatures of AlN resulted in lower impurities and relatively fewer features with short range correlations.

  10. Dynamic scaling and kinetic roughening of poly(ethylene) islands grown by vapor phase deposition

    Czech Academy of Sciences Publication Activity Database

    Choukourov, A.; Melnichuk, I.; Gordeev, I.; Kylián, O.; Hanuš, J.; Kousal, J.; Solař, P.; Hanyková, L.; Brus, Jiří; Slavínská, D.; Biederman, H.

    2014-01-01

    Roč. 565, 28 August (2014), s. 249-260 ISSN 0040-6090 Institutional support: RVO:61389013 Keywords : poly(ethylene) * physical vapor deposition * island growth Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.759, year: 2014

  11. A Fundamental Study of Gas and Vapor Bubble Dynamics in Micro-Channels

    National Research Council Canada - National Science Library

    Prosperetti, Andrea

    1999-01-01

    The aim of this project was to carry out a fundamental study of the basic: Physics underlying the applications of gas and vapor bubbles in heat transfer systems, pumps, actuators, and other small-scale systems...

  12. Effects of Solutally Dominant Convection on Physical Vapor Transport for a Mixture of Hg{sub 2}Br{sub 2} and Br{sub 2} under Microgravity Environments

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Geug-Tae [Hannam University, Daejeon (Korea, Republic of); Kown, Moo Hyun [Woosuk University, Wanju (Korea, Republic of)

    2014-02-15

    The convective flow structures in the vapor phase on earth are shown to be single unicellular, indicating the solutally dominant convection is important. These findings reflect that the total molar fluxes show asymmetrical patterns in a viewpoint of interfacial distributions. With decreasing the gravitational level form 1 g{sub 0} down to 1.0x10{sup -4} g{sub 0}, the total molar fluxes decay first order exponentially. It is also found that the total molar fluxes decay first order exponentially with increasing the partial pressure of component B, PB (Torr) form 5 Torr up to 400 Torr.. Under microgravity environments less than 1 g{sub 0}, a diffusive-convection mode is dominant and, results in much uniformity in front of the crystal regions in comparisons with a normal gravity acceleration of 1 g{sub 0}.

  13. On the vapor-liquid equilibrium in hydroprocessing reactors

    Energy Technology Data Exchange (ETDEWEB)

    Chen, J.; Munteanu, M.; Farooqi, H. [National Centre for Upgrading Technology, Devon, AB (Canada)

    2009-07-01

    When petroleum distillates undergo hydrotreating and hydrocracking, the feedstock and hydrogen pass through trickle-bed catalytic reactors at high temperatures and pressures with large hydrogen flow. As such, the oil is partially vaporized and the hydrogen is partially dissolved in liquid to form a vapor-liquid equilibrium (VLE) system with both vapor and liquid phases containing oil and hydrogen. This may result in considerable changes in flow rates, physical properties and chemical compositions of both phases. Flow dynamics, mass transfer, heat transfer and reaction kinetics may also be modified. Experimental observations of VLE behaviours in distillates with different feedstocks under a range of operating conditions were presented. In addition, VLE was predicted along with its effects on distillates in pilot and commercial scale plants. tabs., figs.

  14. Queijo gorgonzola fabricado com leite pasteurizado por ejetor de vapor e HTST: parâmetros físico-químicos e sensoriais Gorgonzola type cheese manufactured with milk pasteurized by the HTST and steam ejector systems: physic-chemical and sensory parameters

    Directory of Open Access Journals (Sweden)

    Cristiane Gattini Sbampato

    2000-01-01

    Full Text Available Este trabalho teve como objetivo avaliar a influência de dois sistemas de pasteurização (High Temperature Short Time ¾ HTST¾ e ejetor de vapor nas características físico-químicas e sensoriais do queijo tipo Gorgonzola. As coletas de amostras de queijo e análises foram realizadas aos 5, 25, 45, 65 e 85 dias de maturação. Durante o período de maturação ocorreu aumento gradual de pH, sal/umidade e índice de acidez nos dois tratamentos. Os queijos fabricados com leite pasteurizado pelo sistema HTST obtiveram valores médios de pH superiores aos dos queijos fabricados com leite pasteurizado pelo sistema ejetor de vapor; os queijos fabricados com leite pasteurizado pelo sistema ejetor de vapor, obtiveram teores de índice de acidez e metilcetonas superiores aos dos queijos fabricados com leite pasteurizado pelo sistema HTST, indicando maior atividade lipolítica nesses queijos. Pela análise sensorial realizada aos 65 dias de maturação, pode se observar que não houve diferença significativa entre os tratamentos em relação à aparência, cor, consistência, textura e sabor. Porém foi observada diferença significativa com relação ao desenvolvimento do mofo e aroma. Os queijos fabricados com leite pasteurizado pelo sistema ejetor de vapor apresentaram maior atividade lipolítica e massa mais macia e fechada.The objective of this work was to evaluate the influence of two pasteurization systems (HTST and steam ejector on the physic-chemical and sensory characteristics of Gorgonzola type cheese. Sampling and analysis were conducted at 5, 25, 45, 65 and 85 days of ripening. Along the maturation period, pH, acidity index, salt/humidity, gradually increased. Cheeses manufactured with milk pasteurized by the HTST system had average values of pH higher than those manufactured with milk pasteurized by the steam ejector system. Milk pasteurized by the steam ejector system produced cheeses with higher acidity index (lipolysis and

  15. Microstructure of vapor deposited coatings on curved substrates

    Energy Technology Data Exchange (ETDEWEB)

    Rodgers, Theron M.; Zhao, Hengbei; Wadley, Haydn N. G., E-mail: haydn@virginia.edu [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., P.O. Box 400745, Charlottesville, Virginia 22904 (United States)

    2015-09-15

    Thermal barrier coating systems consisting of a metallic bond coat and ceramic over layer are widely used to extend the life of gas turbine engine components. They are applied using either high-vacuum physical vapor deposition techniques in which vapor atoms rarely experience scattering collisions during propagation to a substrate, or by gas jet assisted (low-vacuum) vapor deposition techniques that utilize scattering from streamlines to enable non-line-of-sight deposition. Both approaches require substrate motion to coat a substrate of complex shape. Here, direct simulation Monte Carlo and kinetic Monte Carlo simulation methods are combined to simulate the deposition of a nickel coating over the concave and convex surfaces of a model airfoil, and the simulation results are compared with those from experimental depositions. The simulation method successfully predicted variations in coating thickness, columnar growth angle, and porosity during both stationary and substrate rotated deposition. It was then used to investigate a wide range of vapor deposition conditions spanning high-vacuum physical vapor deposition to low-vacuum gas jet assisted vapor deposition. The average coating thickness was found to increase initially with gas pressure reaching a maximum at a chamber pressure of 8–10 Pa, but the best coating thickness uniformity was achieved under high vacuum deposition conditions. However, high vacuum conditions increased the variation in the coatings pore volume fraction over the surface of the airfoil. The simulation approach was combined with an optimization algorithm and used to investigate novel deposition concepts to tailor the local coating thickness.

  16. Microstructure of vapor deposited coatings on curved substrates

    International Nuclear Information System (INIS)

    Rodgers, Theron M.; Zhao, Hengbei; Wadley, Haydn N. G.

    2015-01-01

    Thermal barrier coating systems consisting of a metallic bond coat and ceramic over layer are widely used to extend the life of gas turbine engine components. They are applied using either high-vacuum physical vapor deposition techniques in which vapor atoms rarely experience scattering collisions during propagation to a substrate, or by gas jet assisted (low-vacuum) vapor deposition techniques that utilize scattering from streamlines to enable non-line-of-sight deposition. Both approaches require substrate motion to coat a substrate of complex shape. Here, direct simulation Monte Carlo and kinetic Monte Carlo simulation methods are combined to simulate the deposition of a nickel coating over the concave and convex surfaces of a model airfoil, and the simulation results are compared with those from experimental depositions. The simulation method successfully predicted variations in coating thickness, columnar growth angle, and porosity during both stationary and substrate rotated deposition. It was then used to investigate a wide range of vapor deposition conditions spanning high-vacuum physical vapor deposition to low-vacuum gas jet assisted vapor deposition. The average coating thickness was found to increase initially with gas pressure reaching a maximum at a chamber pressure of 8–10 Pa, but the best coating thickness uniformity was achieved under high vacuum deposition conditions. However, high vacuum conditions increased the variation in the coatings pore volume fraction over the surface of the airfoil. The simulation approach was combined with an optimization algorithm and used to investigate novel deposition concepts to tailor the local coating thickness

  17. Adsorption of radon and water vapor on commercial activated carbons

    International Nuclear Information System (INIS)

    Hassan, N.M.; Ghosh, T.K.; Hines, A.L.; Loyalka, S.K.

    1995-01-01

    Equilibrium adsorption isotherms are reported for radon and water vapor on two commercial activated carbons: coconut shell Type PCB and hardwood Type BD. The isotherms of the water vapor were measured gravimetrically at 298 K. The isotherms of radon from dry nitrogen were obtained at 293, 298, and 308 K while the data for the mixture of radon and water vapor were measured at 298 K. The concentrations of radon in the gas and solid phases were measured simultaneously, once the adsorption equilibrium and the radioactive equilibrium between the radon and its daughter products were established. The shape of the isotherms was of Type III for the radon and Type V for the water vapor, according to Brunauer's classification. The adsorption mechanism was similar for both the radon and the water vapor, being physical adsorption on the macropore surface area in the low pressure region and micropore filling near saturation pressure. The uptake capacity of radon decreased both with increasing temperature and relative humidity. The heat of adsorption data indicated that the PCB- and the BD-activated carbons provided a heterogeneous surface for radon adsorption. The equilibrium data for radon were correlated with a modified Freundlich equation

  18. Waste Tank Vapor Project: Tank vapor database development

    International Nuclear Information System (INIS)

    Seesing, P.R.; Birn, M.B.; Manke, K.L.

    1994-09-01

    The objective of the Tank Vapor Database (TVD) Development task in FY 1994 was to create a database to store, retrieve, and analyze data collected from the vapor phase of Hanford waste tanks. The data needed to be accessible over the Hanford Local Area Network to users at both Westinghouse Hanford Company (WHC) and Pacific Northwest Laboratory (PNL). The data were restricted to results published in cleared reports from the laboratories analyzing vapor samples. Emphasis was placed on ease of access and flexibility of data formatting and reporting mechanisms. Because of time and budget constraints, a Rapid Application Development strategy was adopted by the database development team. An extensive data modeling exercise was conducted to determine the scope of information contained in the database. a A SUN Sparcstation 1000 was procured as the database file server. A multi-user relational database management system, Sybase reg-sign, was chosen to provide the basic data storage and retrieval capabilities. Two packages were chosen for the user interface to the database: DataPrism reg-sign and Business Objects trademark. A prototype database was constructed to provide the Waste Tank Vapor Project's Toxicology task with summarized and detailed information presented at Vapor Conference 4 by WHC, PNL, Oak Ridge National Laboratory, and Oregon Graduate Institute. The prototype was used to develop a list of reported compounds, and the range of values for compounds reported by the analytical laboratories using different sample containers and analysis methodologies. The prototype allowed a panel of toxicology experts to identify carcinogens and compounds whose concentrations were within the reach of regulatory limits. The database and user documentation was made available for general access in September 1994

  19. Estimated vapor pressure for WTP process streams

    Energy Technology Data Exchange (ETDEWEB)

    Pike, J. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Poirier, M. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

    2015-01-01

    Design assumptions during the vacuum refill phase of the Pulsed Jet Mixers (PJMs) in the Hanford Waste Treatment and Immobilization Plant (WTP) equate the vapor pressure of all process streams to that of water when calculating the temperature at which the vacuum refill is reduced or eliminated. WTP design authority asked the authors to assess this assumption by performing calculations on proposed feed slurries to calculate the vapor pressure as a function of temperature. The vapor pressure was estimated for each WTP waste group. The vapor pressure suppression caused by dissolved solids is much greater than the increase caused by organic components such that the vapor pressure for all of the waste group compositions is less than that of pure water. The vapor pressure for each group at 145°F ranges from 81% to 98% of the vapor pressure of water. If desired, the PJM could be operated at higher temperatures for waste groups with high dissolved solids that suppress vapor pressure. The SO4 group with the highest vapor pressure suppression could be operated up to 153°F before reaching the same vapor pressure of water at 145°F. However, most groups would reach equivalent vapor pressure at 147 to 148°F. If any of these waste streams are diluted, the vapor pressure can exceed the vapor pressure of water at mass dilution ratios greater than 10, but the overall effect is less than 0.5%.

  20. Vapor generation methods for explosives detection research

    Energy Technology Data Exchange (ETDEWEB)

    Grate, Jay W.; Ewing, Robert G.; Atkinson, David A.

    2012-12-01

    The generation of calibrated vapor samples of explosives compounds remains a challenge due to the low vapor pressures of the explosives, adsorption of explosives on container and tubing walls, and the requirement to manage (typically) multiple temperature zones as the vapor is generated, diluted, and delivered. Methods that have been described to generate vapors can be classified as continuous or pulsed flow vapor generators. Vapor sources for continuous flow generators are typically explosives compounds supported on a solid support, or compounds contained in a permeation or diffusion device. Sources are held at elevated isothermal temperatures. Similar sources can be used for pulsed vapor generators; however, pulsed systems may also use injection of solutions onto heated surfaces with generation of both solvent and explosives vapors, transient peaks from a gas chromatograph, or vapors generated by s programmed thermal desorption. This article reviews vapor generator approaches with emphasis on the method of generating the vapors and on practical aspects of vapor dilution and handling. In addition, a gas chromatographic system with two ovens that is configurable with up to four heating ropes is proposed that could serve as a single integrated platform for explosives vapor generation and device testing. Issues related to standards, calibration, and safety are also discussed.

  1. Vapor generating unit blowdown arrangement

    International Nuclear Information System (INIS)

    McDonald, B.N.

    1978-01-01

    A vapor generating unit having a U-shaped tube bundle is provided with an orificed downcomer shroud and a fluid flow distribution plate between the lower hot and cold leg regions to promote fluid entrained sediment deposition in proximity to an apertured blowdown pipe

  2. Hanford soil partitioning and vapor extraction study

    International Nuclear Information System (INIS)

    Yonge, D.; Hossain, A.; Cameron, R.; Ford, H.; Storey, C.

    1996-07-01

    This report describes the testing and results of laboratory experiments conducted to assist the carbon tetrachloride soil vapor extraction project operating in the 200 West Area of the Hanford Site in Richland, Washington. Vapor-phase adsorption and desorption testing was performed using carbon tetrachloride and Hanford Site soils to estimate vapor-soil partitioning and reasonably achievable carbon tetrachloride soil concentrations during active vapor extractions efforts at the 200 West Area. (CCl 4 is used in Pu recovery from aqueous streams.)

  3. Vapor Pressure Data Analysis and Statistics

    Science.gov (United States)

    2016-12-01

    near 8, 2000, and 200, respectively. The A (or a) value is directly related to vapor pressure and will be greater for high vapor pressure materials...1, (10) where n is the number of data points, Yi is the natural logarithm of the i th experimental vapor pressure value, and Xi is the...VAPOR PRESSURE DATA ANALYSIS AND STATISTICS ECBC-TR-1422 Ann Brozena RESEARCH AND TECHNOLOGY DIRECTORATE

  4. Estimating enthalpy of vaporization from vapor pressure using Trouton's rule.

    Science.gov (United States)

    MacLeod, Matthew; Scheringer, Martin; Hungerbühler, Konrad

    2007-04-15

    The enthalpy of vaporization of liquids and subcooled liquids at 298 K (delta H(VAP)) is an important parameter in environmental fate assessments that consider spatial and temporal variability in environmental conditions. It has been shown that delta H(VAP)P for non-hydrogen-bonding substances can be estimated from vapor pressure at 298 K (P(L)) using an empirically derived linear relationship. Here, we demonstrate that the relationship between delta H(VAP)and PL is consistent with Trouton's rule and the ClausiusClapeyron equation under the assumption that delta H(VAP) is linearly dependent on temperature between 298 K and the boiling point temperature. Our interpretation based on Trouton's rule substantiates the empirical relationship between delta H(VAP) degree and P(L) degrees for non-hydrogen-bonding chemicals with subcooled liquid vapor pressures ranging over 15 orders of magnitude. We apply the relationship between delta H(VAP) degrees and P(L) degrees to evaluate data reported in literature reviews for several important classes of semivolatile environmental contaminants, including polycyclic aromatic hydrocarbons, chlorobenzenes, polychlorinated biphenyls and polychlorinated dibenzo-dioxins and -furans and illustrate the temperature dependence of results from a multimedia model presented as a partitioning map. The uncertainty associated with estimating delta H(VAP)degrees from P(L) degrees using this relationship is acceptable for most environmental fate modeling of non-hydrogen-bonding semivolatile organic chemicals.

  5. Handbook of vacuum physics

    CERN Document Server

    1964-01-01

    Handbook of Vacuum Physics, Volume 3: Technology is a handbook of vacuum physics, with emphasis on the properties of miscellaneous materials such as mica, oils, greases, waxes, and rubber. Accurate modern tables of physical constants, properties of materials, laboratory techniques, and properties of commercial pumps, gauges, and leak detectors are presented. This volume is comprised of 12 chapters and begins with a discussion on pump oils, divided into rotary pump oils and vapor pump oils. The next chapter deals with the properties and applications of greases, including outgassing and vapor pr

  6. Detailed kinetic and heat transport model for the hydrolysis of lignocellulose by anhydrous hydrogen fluoride vapor

    Energy Technology Data Exchange (ETDEWEB)

    Rorrer, G.L.; Mohring, W.R.; Lamport, D.T.A.; Hawley, M.C.

    1988-01-01

    Anhydrous Hydrogen Fluoride (HF) vapor at ambient conditions efficiently and rapidly hydrolyzed lignocellulose to glucose and lignin. The unsteady-state reaction of HF vapor with a single lignocellulose chip was mathematically modeled under conditions where external and internal mass-transfer resistances were minimized. The model incorporated physical adsorption of HF vapor onto the lignocellulosic matrix and solvolysis of cellulose to glucosyl fluoride by adsorbed HF into the differential material and energy balance expressions. Model predictions for the temperature distribution and global glucose yield in the HF-reacting lignocellulose chip as a function of reaction time and HF vapor stream temperature agreed reasonably with the complimentary experimental data. The model correctly predicted that even when mass-transfer resistances for the reaction of HF vapor with a single lignocellulose chip are minimized, external and internal heat-transfer resistances are still significant.

  7. What Good is Raman Water Vapor Lidar?

    Science.gov (United States)

    Whitman, David

    2011-01-01

    Raman lidar has been used to quantify water vapor in the atmosphere for various scientific studies including mesoscale meteorology and satellite validation. Now the international networks of NDACC and GRUAN have interest in using Raman water vapor lidar for detecting trends in atmospheric water vapor concentrations. What are the data needs for addressing these very different measurement challenges. We will review briefly the scientific needs for water vapor accuracy for each of these three applications and attempt to translate that into performance specifications for Raman lidar in an effort to address the question in the title of "What good is Raman water vapor Iidar."

  8. High temperature vapors science and technology

    CERN Document Server

    Hastie, John

    2012-01-01

    High Temperature Vapors: Science and Technology focuses on the relationship of the basic science of high-temperature vapors to some areas of discernible practical importance in modern science and technology. The major high-temperature problem areas selected for discussion include chemical vapor transport and deposition; the vapor phase aspects of corrosion, combustion, and energy systems; and extraterrestrial high-temperature species. This book is comprised of seven chapters and begins with an introduction to the nature of the high-temperature vapor state, the scope and literature of high-temp

  9. Physical vapor deposition of Er.sup.3+./sup.: Yb.sub.3./sub.Al.sub.5./sub.O.sub.12./sub. thin films from sol-gel derived targets

    Czech Academy of Sciences Publication Activity Database

    Hlásek, T.; Rubešová, K.; Jakeš, V.; Nováček, M.; Oswald, Jiří; Fitl, P.; Siegel, J.; Macháč, P.

    2016-01-01

    Roč. 60, č. 4 (2016), s. 285-290 ISSN 0862-5468 Institutional support: RVO:68378271 Keywords : PLD * electron beam deposition * thin film * ytterbium-aluminium garnet * erbium Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.439, year: 2016

  10. Vapor Pressure of Antimony Triiodide

    Science.gov (United States)

    2017-12-07

    unlimited. iii Contents List of Figures iv 1. Introduction 1 2. Vapor Pressure 1 3. Experiment 3 4. Discussion and Measurements 5 5...SbI3 as a function of temperature ......................... 6 Approved for public release; distribution is unlimited. 1 1. Introduction ...single-crystal thin films of n-type (Bi,Sb)2(Te,Se)3 materials presents new doping challenges because it is a nonequilibrium process. (Bi,Sb)2(Te,Se)3

  11. Sodium vapor charge exchange cell

    International Nuclear Information System (INIS)

    Hiddleston, H.R.; Fasolo, J.A.; Minette, D.C.; Chrien, R.E.; Frederick, J.A.

    1976-01-01

    An operational sequential charge-exchange ion source yielding a 50 MeV H - current of approximately 8 mA is planned for use with the Argonne 500 MeV booster synchrotron. We report on the progress for development of a sodium vapor charge-exchange cell as part of that planned effort. Design, fabrication, and operating results to date are presented and discussed. (author)

  12. Sodium and potassium vapor Faraday filters revisited: theory and applications

    International Nuclear Information System (INIS)

    Harrell, S. D.; She, C.-Y.; Yuan Tao; Krueger, David A.; Chen, H.; Chen, S. S.; Hu, Z. L.

    2009-01-01

    A complete theory describing the transmission of atomic vapor Faraday filters is developed. The dependence of the filter transmission on atomic density and external magnetic field strength, as well as the frequency dependence of transmission, are explained in physical terms. As examples, applications of the computed results to ongoing research to suppress sky background, thus allowing Na lidar operation under sunlit conditions, and to enable measurement of the density of mesospheric oxygen atoms are briefly discussed

  13. Effect of organic-buffer-layer on electrical property and environmental reliability of Ga-doped ZnO films prepared by RF plasma assisted DC magnetron sputtering on plastic substrate

    International Nuclear Information System (INIS)

    Hinoki, Toshio; Kyuhara, Chika; Agura, Hideaki; Yazawa, Kenji; Kinoshita, Kentaro; Ohmi, Koutoku; Kishida, Satoru

    2010-01-01

    Ga-doped ZnO (GZO) transparent conductive films have been prepared by RF plasma assisted DC magnetron sputtering under a reductive atmosphere on organic-buffer-layer (OBL) coated polyethylene telephthalate (PET) substrates without intentionally heating substrates. Electrical and optical properties, crystallinity, and environmental reliability of the GZO films have been investigated. The distributional characteristic of resistivity is observed in the GZO film deposited on the OBL-coated PET substrates. The high resistivity at facing the erosion area in the source target is reduced by providing the RF plasma and H 2 gas near the substrate, resulting in a uniform distribution of the sheet resistance. It has been also found that the increase of resistivity by an accelerated aging test performed under a storage condition at 60 o C and at a relative humidity of 95% is suppressed by employing the OBL. The OBL suppresses the formation of cracks, which are induced by the aging test. These facts are thought to contribute to a high environmental reliability of GZO films on PET substrates. Values of resistivity, Hall mobility and carrier concentration are obtained: 5.0-20 x 10 -3 Ω cm, 4.0 cm 2 /Vs, and 3.8 x 10 20 cm -3 , respectively. An average transmittance of the GZO film including OBL and PET substrate is 78% in a visible region. The OBL enables to realize the practical use of GZO films on PET sheets.

  14. Growth of c-plane ZnO on γ-LiAlO2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yan, T.; Lu, C.-Y.J.; Schuber, R.; Chang, L.; Schaadt, D.M.; Chou, M.M.C.; Ploog, K.H.; Chiang, C.-M.

    2015-01-01

    Highlights: • ZnO epilayers were grown on LiAlO 2 (1 0 0) substrate with a GaN buffer layer by MBE. • A high Zn/O flux ratio is beneficial for reducing the density of screw dislocations. • Reciprocal space maps demonstrate that the misfit strain in ZnO has been relaxed. • No interfacial layer is formed at ZnO/GaN interface using a Zn pre-exposure strategy. - Abstract: C-plane ZnO epilayers were grown on LiAlO 2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy. Both the X-ray rocking curves and the transmission electron microscopy analyses indicate that the ZnO epilayers exhibit a lower threading dislocation density (∼1 × 10 10 cm −2 ) as compared to those grown on LiAlO 2 substrate without the buffer layer. A high Zn/O flux ratio is beneficial for reducing the density of screw-type dislocations. Reciprocal space maps demonstrate that the misfit strain has been relaxed. No interfacial layer is formed at the ZnO/GaN interface by using a Zn pre-exposure strategy. The ZnO epilayers exhibit a strong near band edge emission at 3.28 eV at room temperature with a negligible green band emission

  15. Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si(111) by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Agrawal, Manvi; Dharmarasu, Nethaji; Radhakrishnan, K.; Pramana, Stevin Snellius

    2015-01-01

    Wet chemical etching, reflection high energy electron diffraction, scanning electron microscope and convergent beam electron diffraction have been employed to study the polarities of AlN and the subsequently grown GaN as a function of metal flux in the metal rich growth regime. Both AlN and GaN exhibited metal polarity in the intermediate growth conditions. However, in the droplet growth regime, the polarity of AlN and GaN were N polar and Ga polar, respectively. It was observed that Ga polar GaN could be obtained on both Al and N polar AlN. AlGaN/GaN high electron mobility transistor (HEMT) heterostructure exhibiting hall mobility of 900 cm 2 V -1 s -1 and sheet carrier density of 1.2 × 10 13 cm -2 was demonstrated using N polar AlN which confirmed Ga polarity of GaN. Al metal flux was likely to play an important role in controlling the polarity of AlN and determining the polarity of the subsequent GaN grown on Si(111) by plasma assisted molecular beam epitaxy (PA-MBE). (author)

  16. Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yodo, T.; Nakamura, T.; Kouyama, T.; Harada, Y.

    2005-01-01

    We investigated the influences of residual oxygen (O) impurities, cubic indium oxide (β-In 2 O 3 ) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal (α)-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although β-In 2 O 3 grains with wide band-gap energy were formed in In film by N 2 annealing, they were not easily formed in N 2 -annealed InN films. Even if they were not detected in N 2 -annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]≤0.5%). Although [O]∝1% could be estimated by investigating In 2 O 3 grains formed in N 2 -annealed InN films, [O]≤0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In 2 O 3 grains formed by H 2 annealing with higher reactivity with InN and O 2 , using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hussein, A. SH.; Hassan, Z.; Thahab, S.M.; Ng, S.S.; Hassan, H. Abu; Chin, C.W.

    2011-01-01

    The effect of Al mole fractions on the structural and electrical properties of Al x Ga 1-x N/GaN thin films grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si (1 1 1) substrates has been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage (I-V) measurements. X-ray results revealed that the AlGaN/GaN/AlN was epitaxially grown on Si substrate. By applying Vegard's law, the Al mole fractions of Al x Ga 1-x N samples were found to be 0.11, 0.24, 0.30 and 0.43, respectively. The structural and morphology results indicated that there is a relatively larger tensile strain for the sample with the smallest Al mole fraction; while a smaller compressive strain and larger grain size appear with Al mole fraction equal to 0.30. The strain gets relaxed with the highest Al mole fraction sample. Finally, the linear relationship between the barrier height and Al mole fraction was obtained.

  18. Imparting passivity to vapor deposited magnesium alloys

    Science.gov (United States)

    Wolfe, Ryan C.

    Magnesium has the lowest density of all structural metals. Utilization of low density materials is advantageous from a design standpoint, because lower weight translates into improved performance of engineered products (i.e., notebook computers are more portable, vehicles achieve better gas mileage, and aircraft can carry more payload). Despite their low density and high strength to weight ratio, however, the widespread implementation of magnesium alloys is currently hindered by their relatively poor corrosion resistance. The objective of this research dissertation is to develop a scientific basis for the creation of a corrosion resistant magnesium alloy. The corrosion resistance of magnesium alloys is affected by several interrelated factors. Among these are alloying, microstructure, impurities, galvanic corrosion effects, and service conditions, among others. Alloying and modification of the microstructure are primary approaches to controlling corrosion. Furthermore, nonequilibrium alloying of magnesium via physical vapor deposition allows for the formation of single-phase magnesium alloys with supersaturated concentrations of passivity-enhancing elements. The microstructure and surface morphology is also modifiable during physical vapor deposition through the variation of evaporation power, pressure, temperature, ion bombardment, and the source-to-substrate distance. Aluminum, titanium, yttrium, and zirconium were initially chosen as candidates likely to impart passivity on vapor deposited magnesium alloys. Prior to this research, alloys of this type have never before been produced, much less studied. All of these metals were observed to afford some degree of corrosion resistance to magnesium. Due to the especially promising results from nonequilibrium alloying of magnesium with yttrium and titanium, the ternary magnesium-yttrium-titanium system was investigated in depth. While all of the alloys are lustrous, surface morphology is observed under the scanning

  19. Vapor phase coatings of metals and organics for laser fusion target applications

    International Nuclear Information System (INIS)

    Simonsic, G.A.; Powell, B.W.

    Techniques for applying a variety of metal and organic coatings to 50- to 500 μm diameter glass micro-balloons are discussed. Coating thicknesses vary from 1- to 10 μm. Physical vapor deposition (PVD), chemical vapor deposition (CVD), and electrolytic and electroless plating are some of the techniques being evaluated for metal deposition. PVD and glow discharge polymerization are being used for the application of organic coatings. (U.S.)

  20. Effects of biochar and manure amendments on water vapor sorption in a sandy loam soil

    DEFF Research Database (Denmark)

    Arthur, Emmanuel; Tuller, Markus; Moldrup, Per

    2015-01-01

    Over the last few years, the application of biochar (BC) as a soil amendment to sequester carbon and mitigate global climate change has received considerable attention. While positive effects of biochar on plant nutrition are well documented, little is known about potential impacts on the physical....... Hysteresis of the water vapor sorption isotherms increased with increasing BC application rates. Biochar age did not significantly affect vapor sorption and SSA....

  1. Surface conductivity of the single crystal aluminum oxide in vacuum and caesium vapors

    International Nuclear Information System (INIS)

    Vasilchenko, A.V.; Izhvanov, O.L.

    1996-01-01

    Results of measurements of surface conductivity of single-crystal aluminum oxide samples in vacuum and cesium vapors at T=620 endash 830 K and P Cs =0.13 endash 2 Pa are shown in the paper. Analysis of caesium vapor influence is carried out and ultimate characteristics of samples conductivity under operation conditions in thermionic nuclear power system (NPP) TFE are estimated. copyright 1996 American Institute of Physics

  2. Spark Ignition of Combustible Vapor in a Plastic Bottle as a Demonstration of Rocket Propulsion

    Science.gov (United States)

    Mattox, J. R.

    2017-01-01

    I report an innovation that provides a compelling demonstration of rocket propulsion, appropriate for students of physics and other physical sciences. An electrical spark is initiated from a distance to cause the deflagration of a combustible vapor mixed with air in a lightweight plastic bottle that is consequently propelled as a rocket by the…

  3. Effect of Preferential Solvation of Polymer Chains on Vapor-Pressure Osmometry Results. Computer Simulation Study.

    Czech Academy of Sciences Publication Activity Database

    Svoboda, Martin; Lísal, Martin; Limpouchová, Z.; Procházka, Karel

    2018-01-01

    Roč. 23, č. 3 (2018), s. 244-251 ISSN 1023-666X R&D Projects: GA ČR GA15-19542S Institutional support: RVO:67985858 Keywords : vapor-pressure osmometry * simulation * solvatation Subject RIV: CF - Physical ; Theoretical Chemistry OBOR OECD: Physical chemistry

  4. Microwave assisted chemical vapor infiltration

    International Nuclear Information System (INIS)

    Devlin, D.J.; Currier, R.P.; Barbero, R.S.; Espinoza, B.F.; Elliott, N.

    1991-01-01

    A microwave assisted process for production of continuous fiber reinforced ceramic matrix composites is described. A simple apparatus combining a chemical vapor infiltration reactor with a conventional 700 W multimode oven is described. Microwave induced inverted thermal gradients are exploited with the ultimate goal of reducing processing times on complex shapes. Thermal gradients in stacks of SiC (Nicalon) cloths have been measured using optical thermometry. Initial results on the ''inside out'' deposition of SiC via decomposition of methyltrichlorosilane in hydrogen are presented. Several key processing issues are identified and discussed. 5 refs

  5. Overview of chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M.; Stinton, D.P.; Lowden, R.A.

    1993-06-01

    Chemical vapor infiltration (CVI) is developing into a commercially important method for the fabrication of continuous filament ceramic composites. Current efforts are focused on the development of an improved understanding of the various processes in CVI and its modeling. New approaches to CVI are being explored, including pressure pulse infiltration and microwave heating. Material development is also proceeding with emphasis on improving the oxidation resistance of the interfacial layer between the fiber and matrix. This paper briefly reviews these subjects, indicating the current state of the science and technology.

  6. A Lithium Vapor Box Divertor Similarity Experiment

    Science.gov (United States)

    Cohen, Robert A.; Emdee, Eric D.; Goldston, Robert J.; Jaworski, Michael A.; Schwartz, Jacob A.

    2017-10-01

    A lithium vapor box divertor offers an alternate means of managing the extreme power density of divertor plasmas by leveraging gaseous lithium to volumetrically extract power. The vapor box divertor is a baffled slot with liquid lithium coated walls held at temperatures which increase toward the divertor floor. The resulting vapor pressure differential drives gaseous lithium from hotter chambers into cooler ones, where the lithium condenses and returns. A similarity experiment was devised to investigate the advantages offered by a vapor box divertor design. We discuss the design, construction, and early findings of the vapor box divertor experiment including vapor can construction, power transfer calculations, joint integrity tests, and thermocouple data logging. Heat redistribution of an incident plasma-based heat flux from a typical linear plasma device is also presented. This work supported by DOE Contract No. DE-AC02-09CH11466 and The Princeton Environmental Institute.

  7. Thermogravimetric measurements of liquid vapor pressure

    International Nuclear Information System (INIS)

    Rong Yunhong; Gregson, Christopher M.; Parker, Alan

    2012-01-01

    Highlights: ► Rapid determination of vapor pressure by TGA. ► Demonstration of limitations of currently available approaches in literature. ► New model for vapor pressure assessment of small size samples in TGA. ► New model accounts for vapor diffusion and sample geometry and measures vapor pressure normally within 10%. - Abstract: A method was developed using thermo-gravimetric analysis (TGA) to determine the vapor pressure of volatile liquids. This is achieved by measuring the rate of evaporation (mass loss) of a pure liquid contained within a cylindrical pan. The influence of factors like sample geometry and vapor diffusion on evaporation rate are discussed. The measurement can be performed across a wide range of temperature yielding reasonable results up to 10 kPa. This approach may be useful as a rapid and automatable method for measuring the volatility of flavor and fragrance raw materials.

  8. Ion vapor deposition and its application

    International Nuclear Information System (INIS)

    Bollinger, H.; Schulze, D.; Wilberg, R.

    1981-01-01

    Proceeding from the fundamentals of ion vapor deposition the characteristic properties of ion-plated coatings are briefly discussed. Examples are presented of successful applications of ion-plated coatings such as coatings with special electrical and dielectric properties, coatings for corrosion prevention, and coatings for improving the surface properties. It is concluded that ion vapor deposition is an advantageous procedure in addition to vapor deposition. (author)

  9. Linear Stability Analysis of an Acoustically Vaporized Droplet

    Science.gov (United States)

    Siddiqui, Junaid; Qamar, Adnan; Samtaney, Ravi

    2015-11-01

    Acoustic droplet vaporization (ADV) is a phase transition phenomena of a superheat liquid (Dodecafluoropentane, C5F12) droplet to a gaseous bubble, instigated by a high-intensity acoustic pulse. This approach was first studied in imaging applications, and applicable in several therapeutic areas such as gas embolotherapy, thrombus dissolution, and drug delivery. High-speed imaging and theoretical modeling of ADV has elucidated several physical aspects, ranging from bubble nucleation to its subsequent growth. Surface instabilities are known to exist and considered responsible for evolving bubble shapes (non-spherical growth, bubble splitting and bubble droplet encapsulation). We present a linear stability analysis of the dynamically evolving interfaces of an acoustically vaporized micro-droplet (liquid A) in an infinite pool of a second liquid (liquid B). We propose a thermal ADV model for the base state. The linear analysis utilizes spherical harmonics (Ynm, of degree m and order n) and under various physical assumptions results in a time-dependent ODE of the perturbed interface amplitudes (one at the vapor/liquid A interface and the other at the liquid A/liquid B interface). The perturbation amplitudes are found to grow exponentially and do not depend on m. Supported by KAUST Baseline Research Funds.

  10. Monofilament Vaporization Propulsion (MVP) System, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Monofilament Vaporization Propulsion (MVP) is a new propulsion technology targeted at secondary payload applications. It does not compromise on performance while...

  11. Experiences of marijuana-vaporizer users.

    Science.gov (United States)

    Malouff, John M; Rooke, Sally E; Copeland, Jan

    2014-01-01

    Using a marijuana vaporizer may have potential harm-reduction advantages on smoking marijuana, in that the user does not inhale smoke. Little research has been published on use of vaporizers. In the first study of individuals using a vaporizer on their own initiative, 96 adults anonymously answered questions about their experiences with a vaporizer and their use of marijuana with tobacco. Users identified 4 advantages to using a vaporizer over smoking marijuana: perceived health benefits, better taste, no smoke smell, and more effect from the same amount of marijuana. Users identified 2 disadvantages: inconvenience of setup and cleaning and the time it takes to get the device operating for each use. Only 2 individuals combined tobacco in the vaporizer mix, whereas 15 combined tobacco with marijuana when they smoked marijuana. Almost all participants intended to continue using a vaporizer. Vaporizers seem to have appeal to marijuana users, who perceive them as having harm-reduction and other benefits. Vaporizers are worthy of experimental research evaluating health-related effects of using them.

  12. Vapor pressures and thermophysical properties of selected hexenols and recommended vapor pressure for hexan-1-ol

    Czech Academy of Sciences Publication Activity Database

    Štejfa, V.; Fulem, Michal; Růžička, K.; Matějka, P.

    2015-01-01

    Roč. 402, Sep (2015), 18-29 ISSN 0378-3812 Institutional support: RVO:68378271 Keywords : alcohols * vapor pressure * heat capacity * ideal - gas thermodynamic properties * vaporization enthalpy Subject RIV: BJ - Thermodynamics Impact factor: 1.846, year: 2015

  13. Physical physics

    CERN Document Server

    Schulman, Mark

    2006-01-01

    "Protons, electrons, positrons, quarks, gluons, muons, shmuons! I should have paid better attention to my high scholl physics teacher. If I had, maybe I could have understood even a fration of what Israeli particle physicist Giora Mikenberg was talking about when explaining his work on the world's largest science experiment." (2 pages)

  14. Double-ceramic-layer thermal barrier coatings based on La{sub 2}(Zr{sub 0.7}Ce{sub 0.3}){sub 2}O{sub 7}/La{sub 2}Ce{sub 2}O{sub 7} deposited by electron beam-physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Z.H. [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); He, L.M., E-mail: he_limin@yahoo.com [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Mu, R.D.; He, S.M.; Huang, G.H. [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Cao, X.Q., E-mail: xcao@ciac.jl.cn [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

    2010-03-15

    Double-ceramic-layer (DCL) thermal barrier coatings (TBCs) of La{sub 2}(Zr{sub 0.7}Ce{sub 0.3}){sub 2}O{sub 7} (LZ7C3) and La{sub 2}Ce{sub 2}O{sub 7} (LC) were deposited by electron beam-physical vapor deposition (EB-PVD). The composition, interdiffusion, surface and cross-sectional morphologies, cyclic oxidation behavior of DCL coating were studied. Energy dispersive spectroscopy and X-ray diffraction analyses indicate that both LZ7C3 and LC coatings are effectively fabricated by a single LZ7C3 ingot with properly controlling the deposition energy. The chemical compatibility of LC coating and thermally grown oxide (TGO) layer is unstable. LaAlO{sub 3} is formed due to the chemical reaction between LC and Al{sub 2}O{sub 3} which is the main composition of TGO layer. Additionally, the thermal cycling behavior of DCL coating is influenced by the interdiffusion of Zr and Ce between LZ7C3 and LC coatings. The failure of DCL coating is a result of the sintering of LZ7C3 coating surface, the chemical incompatibility of LC coating and TGO layer and the abnormal oxidation of bond coat. Since no single material that has been studied so far satisfies all the requirements for high temperature applications, DCL coating is an important development direction of TBCs.

  15. Enthalpy of vaporization and vapor pressure of whiskey lactone and menthalactone by correlation gas chromatography

    International Nuclear Information System (INIS)

    Simmons, Daniel; Chickos, James

    2017-01-01

    Highlights: • The vapor pressure and vaporization enthalpies of cis and trans-whiskey lactone have been evaluated. • Enthalpies of vaporization and vapor pressures of (+)-isomintlactone and (−)-mintlactone were also evaluated. • The sublimation enthalpy and corresponding vapor pressure of (+) -isomintlactone at T = 298.15 K is estimated. - Abstract: Enthalpies of vaporization at T = 298.15 K of cis and trans-whiskey lactone have been evaluated by correlation gas chromatography to be (68.4 ± 1.7) kJ·mol −1 and (67.5 ± 1.7) kJ·mol −1 , respectively. The enthalpies of vaporization of isomintlactone and mintlactone also evaluated by correlation gas chromatography have been found to have vaporization enthalpies of (74.2 ± 1.8) kJ·mol −1 and (73.2 ± 1.8) kJ·mol −1 respectively. The vapor pressures for cis and trans-whiskey lactone at T = 298.15 K have been evaluated as (1.5 ± 0.09) Pa and (2.0 ± 0.1) Pa using vapor pressures of a series of lactones as standards. Vapor pressures for isomintlactone and mintlactone were evaluated as (0.26 ± 0.012) Pa and (0.33 ± 0.02) Pa, respectively. Fusion and sublimation enthalpies for (+)-isomintlactone as well as the vapor pressure of the solid have been estimated.

  16. Optical Sensor for Diverse Organic Vapors at ppm Concentration Ranges

    Directory of Open Access Journals (Sweden)

    Dora M. Paolucci

    2011-03-01

    Full Text Available A broadly responsive optical organic vapor sensor is described that responds to low concentrations of organic vapors without significant interference from water vapor. Responses to several classes of organic vapors are highlighted, and trends within classes are presented. The relationship between molecular properties (vapor pressure, boiling point, polarizability, and refractive index and sensor response are discussed.

  17. Plasma assisted surface treatments of biomaterials.

    Science.gov (United States)

    Minati, L; Migliaresi, C; Lunelli, L; Viero, G; Dalla Serra, M; Speranza, G

    2017-10-01

    The biocompatibility of an implant depends upon the material it is composed of, in addition to the prosthetic device's morphology, mechanical and surface properties. Properties as porosity and pore size should allow, when required, cells penetration and proliferation. Stiffness and strength, that depend on the bulk characteristics of the material, should match the mechanical requirements of the prosthetic applications. Surface properties should allow integration in the surrounding tissues by activating proper communication pathways with the surrounding cells. Bulk and surface properties are not interconnected, and for instance a bone prosthesis could possess the necessary stiffness and strength for the application omitting out prerequisite surface properties essential for the osteointegration. In this case, surface treatment is mandatory and can be accomplished using various techniques such as applying coatings to the prosthesis, ion beams, chemical grafting or modification, low temperature plasma, or a combination of the aforementioned. Low temperature plasma-based techniques have gained increasing consensus for the surface modification of biomaterials for being effective and competitive compared to other ways to introduce surface functionalities. In this paper we review plasma processing techniques and describe potentialities and applications of plasma to tailor the interface of biomaterials. Copyright © 2017 Elsevier B.V. All rights reserved.

  18. Plasma-Assisted Pretreatment of Wheat Straw

    DEFF Research Database (Denmark)

    Schultz-Jensen, Nadja; Leipold, Frank; Bindslev, Henrik

    2011-01-01

    O3 generated in a plasma at atmospheric pressure and room temperature, fed with dried air (or oxygen-enriched dried air), has been used for the degradation of lignin in wheat straw to optimize the enzymatic hydrolysis and to get more fermentable sugars. A fixed bed reactor was used combined...... with a CO2 detector and an online technique for O3 measurement in the fed and exhaust gas allowing continuous measurement of the consumption of O3. This rendered it possible for us to determine the progress of the pretreatment in real time (online analysis). The process time can be adjusted to produce wheat...... straw with desired lignin content because of the online analysis. The O3 consumption of wheat straw and its polymeric components, i.e., cellulose, hemicellulose, and lignin, as well as a mixture of these, dry as well as with 50% water, were studied. Furthermore, the process parameters dry matter content...

  19. Toward Plasma-Assisted Ignition in Scramjets

    National Research Council Canada - National Science Library

    Jacobsen, Lance S; Carter, Campbell D; Baurie, Robert A; Jackson, Thomas A

    2003-01-01

    .... The two plasma torches currently under investigation consist of a DC constricted-arc design from the Virginia Polytechnic Institute and State University and an AC unconstricted-arc design based...

  20. SOIL VAPOR EXTRACTION TECHNOLOGY: REFERENCE HANDBOOK

    Science.gov (United States)

    Soil vapor extraction (SVE) systems are being used in Increasing numbers because of the many advantages these systems hold over other soil treatment technologies. SVE systems appear to be simple in design and operation, yet the fundamentals governing subsurface vapor transport ar...

  1. Mechanics of gas-vapor bubbles

    NARCIS (Netherlands)

    Hao, Yue; Zhang, Yuhang; Prosperetti, Andrea

    2017-01-01

    Most bubbles contain a mixture of vapor and incondensible gases. While the limit cases of pure vapor and pure gas bubbles are well studied, much less is known about the more realistic case of a mixture. The bubble contents continuously change due to the combined effects of evaporation and

  2. Vapor Pressures of Several Commercially Used Alkanolamines

    NARCIS (Netherlands)

    Klepacova, Katarina; Huttenhuis, Patrick J. G.; Derks, Peter W. J.; Versteeg, Geert F.; Klepáčová, Katarína

    For the design of acid gas treating processes, vapor-liquid equilibrium (VLE) data must be available of the solvents to be applied. In this study the vapor pressures of seven frequently industrially used alkanolamines (diethanolamine, N-methylethanolamine, N,N-dimethylethanolamine,

  3. Effect of granosan vapors on mitosis

    Energy Technology Data Exchange (ETDEWEB)

    Lishenko, N P; Lishenko, I D

    1974-01-01

    Experiments were performed to determine the effects of granosan on the germination of vetch seeds. Vetch seeds were stored from 4-6 days in ethyl mercuric chloride vapors. Results indicated that the vapors caused a sharp decrease in germination and caused chromosomal aberrations during the anaphase.

  4. Condensation of vapor bubble in subcooled pool

    Science.gov (United States)

    Horiuchi, K.; Koiwa, Y.; Kaneko, T.; Ueno, I.

    2017-02-01

    We focus on condensation process of vapor bubble exposed to a pooled liquid of subcooled conditions. Two different geometries are employed in the present research; one is the evaporation on the heated surface, that is, subcooled pool boiling, and the other the injection of vapor into the subcooled pool. The test fluid is water, and all series of the experiments are conducted under the atmospheric pressure condition. The degree of subcooling is ranged from 10 to 40 K. Through the boiling experiment, unique phenomenon known as microbubble emission boiling (MEB) is introduced; this phenomenon realizes heat flux about 10 times higher than the critical heat flux. Condensation of the vapor bubble is the key phenomenon to supply ambient cold liquid to the heated surface. In order to understand the condensing process in the MEB, we prepare vapor in the vapor generator instead of the evaporation on the heated surface, and inject the vapor to expose the vapor bubble to the subcooled liquid. Special attention is paid to the dynamics of the vapor bubble detected by the high-speed video camera, and on the enhancement of the heat transfer due to the variation of interface area driven by the condensation.

  5. Risk assessment of metal vapor arcing

    Science.gov (United States)

    Hill, Monika C. (Inventor); Leidecker, Henning W. (Inventor)

    2009-01-01

    A method for assessing metal vapor arcing risk for a component is provided. The method comprises acquiring a current variable value associated with an operation of the component; comparing the current variable value with a threshold value for the variable; evaluating compared variable data to determine the metal vapor arcing risk in the component; and generating a risk assessment status for the component.

  6. Boiling crisis as inhibition of bubble detachment by the vapor recoil force

    International Nuclear Information System (INIS)

    Nikolayev, V.S.; Beysens, D.; Garrabos, Y.

    2004-01-01

    Boiling crisis is a transition between nucleate and film boiling. In this communication we present a physical model of the boiling crisis based on the vapor recoil effect. Our numerical simulations of the thermally controlled bubble growth at high heat fluxes show how the bubble begins to spread over the heater thus forming a germ for the vapor film. The vapor recoil force not only causes the vapor spreading, it also creates a strong adhesion to the heater that prevents the bubble departure, thus favoring the further bubble spreading. Near the liquid-gas critical point, the bubble growth is very slow and allows the kinetics of the bubble spreading to be observed. Since the surface tension is very small in this regime, only microgravity conditions can preserve a convex bubble shape. Under such conditions, we observed an increase of the apparent contact angle and spreading of the dry spot under the bubble, thus confirming our model of the boiling crisis. (authors)

  7. TRACER-II: a complete computational model for mixing and propagation of vapor explosions

    Energy Technology Data Exchange (ETDEWEB)

    Bang, K.H. [School of Mechanical Engineering, Korea Maritime Univ., Pusan (Korea, Republic of); Park, I.G.; Park, G.C.

    1998-01-01

    A vapor explosion is a physical process in which very rapid energy transfer occurs between a hot liquid and a volatile, colder liquid when the two liquids come into a sudden contact. For the analyses of potential impacts from such explosive events, a computer program, TRACER-II, has been developed, which contains a complete description of mixing and propagation phases of vapor explosions. The model consists of fuel, fragmented fuel (debris), coolant liquid, and coolant vapor in two-dimensional Eulerian coordinates. The set of governing equations are solved numerically using finite difference method. The results of this numerical simulation of vapor explosions are discussed in comparison with the recent experimental data of FARO and KROTOS tests. When compared to some selected FARO and KROTOS data, the fuel-coolant mixing and explosion propagation behavior agree reasonably with the data, although the results are yet sensitive primarily to the melt breakup and fragmentation modeling. (author)

  8. Activated coal of tomato seeds for adsorption of vapors of ammonia, benzene and gasoline

    International Nuclear Information System (INIS)

    Márquez-Montesino, Francisco; Aguiar-Trujillo, Leonardo; Ramos-Robaina, Boris Abel; Zanzi-Vigouroux, Rolando; Birbas, Daniella

    2013-01-01

    The objective was to prove the adsorption possibilities of ammonia, benzene and vapors of gasoline in activated coals with phosphoric acid, of tomato seed. An immediate analysis to the biomass was carried out. It was concluded that the vapors adsorption of ammonia, is related with the physical adsorption and the presence of functional groups of acid character in the active surface of the coal that form weak connections with the molecules of ammonia. Experiments of adsorption of benzene and gasoline were carried out, these substances haven't functional groups as the ammonia, so they were less adsorbed, and it was confirmed a chemical adsorption preferably. The activation temperature, the relationship of impregnation (RI) and the concentration of the acid dissolution haven't a significant influence in the capacity of adsorption of benzene, but they have in the adsorption of ammonia and vapors of gasoline, it's of great application for the elimination of vapors' escape in the motors of vehicles. (author)

  9. MICHIGAN SOIL VAPOR EXTRACTION REMEDIATION (MISER) MODEL: A COMPUTER PROGRAM TO MODEL SOIL VAPOR EXTRACTION AND BIOVENTING OF ORGANIC CHEMICALS IN UNSATURATED GEOLOGICAL MATERIAL

    Science.gov (United States)

    Soil vapor extraction (SVE) and bioventing (BV) are proven strategies for remediation of unsaturated zone soils. Mathematical models are powerful tools that can be used to integrate and quantify the interaction of physical, chemical, and biological processes occurring in field sc...

  10. Acoustic Droplet Vaporization in Biology and Medicine

    Directory of Open Access Journals (Sweden)

    Chung-Yin Lin

    2013-01-01

    Full Text Available This paper reviews the literature regarding the use of acoustic droplet vaporization (ADV in clinical applications of imaging, embolic therapy, and therapeutic delivery. ADV is a physical process in which the pressure waves of ultrasound induce a phase transition that causes superheated liquid nanodroplets to form gas bubbles. The bubbles provide ultrasonic imaging contrast and other functions. ADV of perfluoropentane was used extensively in imaging for preclinical trials in the 1990s, but its use declined rapidly with the advent of other imaging agents. In the last decade, ADV was proposed and explored for embolic occlusion therapy, drug delivery, aberration correction, and high intensity focused ultrasound (HIFU sensitization. Vessel occlusion via ADV has been explored in rodents and dogs and may be approaching clinical use. ADV for drug delivery is still in preclinical stages with initial applications to treat tumors in mice. Other techniques are still in preclinical studies but have potential for clinical use in specialty applications. Overall, ADV has a bright future in clinical application because the small size of nanodroplets greatly reduces the rate of clearance compared to larger contrast agent bubbles and yet provides the advantages of ultrasonographic contrast, acoustic cavitation, and nontoxicity of conventional perfluorocarbon contrast agent bubbles.

  11. Metal vapor vacuum arc ion sources

    International Nuclear Information System (INIS)

    Brown, I.G.; Dickinson, M.R.; Galvin, J.E.; Godechot, X.; MacGill, R.A.

    1990-06-01

    We have developed a family of metal vapor vacuum are (MEVVA) high current metal ion sources. The sources were initially developed for the production of high current beams of metal ions for heavy ion synchrotron injection for basic nuclear physics research; more recently they have also been used for metal ion implantation. A number of different embodiments of the source have been developed for these specific applications. Presently the sources operate in a pulsed mode, with pulse width of order 1 ms and repetition rate up to 100 pps. Beam extraction voltage is up to 100 kV, and since the ions produced in the vacuum arc plasma are in general multiply ionized the ion energy is up to several hundred keV. Beam current is up to several Amperes peak and around 10 mA time averaged delivered onto target. Nearly all of the solid metals of the Periodic Table have been use to produce beam. A number of novel features have been incorporated into the sources, including multiple cathodes and the ability to switch between up to 18 separate cathode materials simply and quickly, and a broad beam source version as well as miniature versions. here we review the source designs and their performance. 45 refs., 7 figs

  12. Building blocks for ionic liquids: Vapor pressures and vaporization enthalpies of 1-(n-alkyl)-imidazoles

    International Nuclear Information System (INIS)

    Emel'yanenko, Vladimir N.; Portnova, Svetlana V.; Verevkin, Sergey P.; Skrzypczak, Andrzej; Schubert, Thomas

    2011-01-01

    Highlights: → We measured vapor pressures of the 1-(n-alkyl)-imidazoles by transpiration method. → Variations on the alkyl chain length n were C 3 , C 5 -C 7 , and C 9 -C 10 . → Enthalpies of vaporization were derived from (p, T) dependencies. → Enthalpies of vaporization at 298.15 K were linear dependent on the chain length. - Abstract: Vapor pressures of the linear 1-(n-alkyl)-imidazoles with the alkyl chain C 3 , C 5 -C 7 , and C 9 -C 10 have been measured by the transpiration method. The molar enthalpies of vaporization Δ l g H m of these compounds were derived from the temperature dependencies of vapor pressures. A linear correlation of enthalpies of vaporization Δ l g H m (298.15 K) of the 1-(n-alkyl)-imidazoles with the chain length has been found.

  13. Defect analysis in low temperature atomic layer deposited Al{sub 2}O{sub 3} and physical vapor deposited SiO barrier films and combination of both to achieve high quality moisture barriers

    Energy Technology Data Exchange (ETDEWEB)

    Maindron, Tony, E-mail: tony.maindron@cea.fr; Jullien, Tony; André, Agathe [Université Grenoble-Alpes, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France)

    2016-05-15

    Al{sub 2}O{sub 3} [20 nm, atomic layer deposition (ALD)] and SiO films' [25 nm, physical vacuum deposition (PVD)] single barriers as well as hybrid barriers of the Al{sub 2}O{sub 3}/SiO or SiO/Al{sub 2}O{sub 3} have been deposited onto single 100 nm thick tris-(8-hydroxyquinoline) aluminum (AlQ{sub 3}) organic films made onto silicon wafers. The defects in the different barrier layers could be easily observed as nonfluorescent AlQ{sub 3} black spots, under ultraviolet light on the different systems stored into accelerated aging conditions (85 °C/85% RH, ∼2000 h). It has been observed that all devices containing an Al{sub 2}O{sub 3} layer present a lag time τ from which defect densities of the different systems start to increase significantly. This is coherent with the supposed pinhole-free nature of fresh, ALD-deposited, Al{sub 2}O{sub 3} films. For t > τ, the number of defect grows linearly with storage time. For devices with the single Al{sub 2}O{sub 3} barrier layer, τ has been estimated to be 64 h. For t > τ, the defect occurrence rate has been calculated to be 0.268/cm{sup 2}/h. Then, a total failure of fluorescence of the AlQ{sub 3} film appears between 520 and 670 h, indicating that the Al{sub 2}O{sub 3} barrier has been totally degraded by the hot moisture. Interestingly, the device with the hybrid barrier SiO/Al{sub 2}O{sub 3} shows the same characteristics as the device with the single Al{sub 2}O{sub 3} barrier (τ = 59 h; 0.246/cm{sup 2}/h for t > τ), indicating that Al{sub 2}O{sub 3} ALD is the factor that limits the performance of the barrier system when it is directly exposed to moisture condensation. At the end of the storage period (1410 h), the defect density for the system with the hybrid SiO/Al{sub 2}O{sub 3} barrier is 120/cm{sup 2}. The best sequence has been obtained when Al{sub 2}O{sub 3} is passivated by the SiO layer (Al{sub 2}O{sub 3}/SiO). In that case, a large lag time of 795 h and a very

  14. Molecular restrictions for human eye irritation by chemical vapors

    International Nuclear Information System (INIS)

    Cometto-Muniz, J. Enrique; Cain, William S.; Abraham, Michael H.

    2005-01-01

    Previous research showed a cut-off along homologous volatile organic compounds (VOCs) in their ability to produce acute human mucosal irritation. The present study sought to specify the particular cut-off homolog for sensory eye irritation in an acetate and n-alcohol series. A 1900-ml glass vessel system and a three-alternative forced-choice procedure served to test nonyl, decyl, and dodecyl acetate, and 1-nonanol, 1-decanol, and 1-undecanol. Flowrate to the eye ranged from 2 to 8 L/min and time of exposure from 3 to 24 s. Decyl acetate and 1-undecanol were the shortest homologs that failed to produce eye irritation under all conditions, producing a cut-off effect. Increasing the vapor concentration of decyl acetate and 1-undecanol by 3 and 8 times, respectively, via heating them to 37 deg C made either or both VOCs detectable to only half of the 12 subjects tested, even though the higher vapor concentration was well above a predicted eye irritation threshold. When eye irritation thresholds for homologous acetates and n-alcohols were plotted as a function of the longest unfolded length of the molecule, the values for decyl acetate and 1-undecanol fell within a restricted range of 18 to 19 A. The outcome suggests that the basis for the cut-off is biological, that is, the molecule lacks a key size or structure to trigger transduction, rather than physical, that is, the vapor concentration is too low to precipitate detection

  15. Water vapor emission from H II regions and infrared stars

    International Nuclear Information System (INIS)

    Cato, B.T.; Ronnang, B.O.; Rydbeck, O.E.H.; Lewin, P.T.; Yngvesson, K.S.; Cardiasmenos, A.G.; Shanley, J.F.

    1976-01-01

    The spatial structure of water vapor microwave line emission has been investigated with moderate angular resolution in several well-known H II regions. New H 2 O sources have been with infrared (1R) sources. One of these sources, IRC: 20411, has been investigated at optical wavelengths. It is found to be of spectral class M3-M5 and by indirect evidence the luminosity class is preliminarily determined to Ib. The distance is estimated to be approx.2 kpc, and the star must be in front of the dust complex which obscures W28 A2. In NGC 7538 new high-velocity features have been discovered. Two new weak water vapor masers, G30.1: 0.7 and G32.8: 0.3, have been detected in a search among eight class II OH/IR sources. H 2 O emission coinciding with the low-velocity OH features of VY Canis Majoris has also been detected. A search for local thermodynamic equilibrium (LTE) water-vapor line emission in molecular clouds associated with H II regions is also reported. No line was detected with the utilized sensitivity. The physical implications of this are discussed and an upper limit of the H 2 O column density has been estimated. Gaussian analysis of the strong, narrow feature in the spectrum of ON 1 indicates a possible presence of two hyperfine components, viz., F→F'=7→6 and 6→5

  16. Effect of nitrogen flow rate on structural, morphological and optical properties of In-rich In{sub x}Al{sub 1−x}N thin films grown by plasma-assisted dual source reactive evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Alizadeh, M., E-mail: alizadeh_kozerash@yahoo.com [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ganesh, V.; Goh, B.T. [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Dee, C.F.; Mohmad, A.R. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, Bangi, Selangor (Malaysia); Rahman, S.A., E-mail: saadah@um.edu.my [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2016-08-15

    Highlights: • In-rich In{sub x}Al{sub 1−x}N films were grown by Plasma-aided reactive evaporation. • Effect of nitrogen flow rate on the films properties was investigated. • The band gap of the films was varied from 1.17 to 0.90 eV. • By increasing N{sub 2} flow rate the In{sub x}Al{sub 1−x}N films tend to turn into amorphous state. • At higher N{sub 2} flow rate agglomeration of the particles is highly enhanced. - Abstract: In-rich In{sub x}Al{sub 1−x}N thin films were deposited on quartz substrate at various nitrogen flow rates by plasma-assisted dual source reactive evaporation technique. The elemental composition, surface morphology, structural and optical properties of the films were investigated by X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray diffraction (XRD), UV–vis spectrophotometer and photoluminescence (PL) measurements. XPS results revealed that the indium composition (x) of the In{sub x}Al{sub 1−x}N films increases from 0.90 to 0.97 as the nitrogen flow rate is increased from 40 to 100 sccm, respectively. FESEM images of the surface and cross-sectional microstructure of the In{sub x}Al{sub 1−x}N films showed that by increasing the N{sub 2} flow rate, the grown particles are highly agglomerated. Raman and XRD results indicated that by increasing nitrogen flow rate the In-rich In{sub x}Al{sub 1−x}N films tend to turn into amorphous state. It was found that band gap energy of the films are in the range of 0.90–1.17 eV which is desirable for the application of full spectra solar cells.

  17. Bandgap measurements and the peculiar splitting of E{sub 2}{sup H} phonon modes of In{sub x}Al{sub 1-x}N nanowires grown by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Tangi, Malleswararao; Mishra, Pawan; Janjua, Bilal; Ng, Tien Khee; Prabaswara, Aditya; Ooi, Boon S., E-mail: boon.ooi@kaust.edu.sa [Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Anjum, Dalaver H.; Yang, Yang [Adavanced nanofabrication Imaging and characterization, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; El-Desouki, Munir M. [National Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442-6086 (Saudi Arabia)

    2016-07-28

    The dislocation free In{sub x}Al{sub 1-x}N nanowires (NWs) are grown on Si(111) by nitrogen plasma assisted molecular beam epitaxy in the temperature regime of 490 °C–610 °C yielding In composition ranges over 0.50 ≤ x ≤ 0.17. We study the optical properties of these NWs by spectroscopic ellipsometry (SE), photoluminescence, and Raman spectroscopies since they possesses minimal strain with reduced defects comparative to the planar films. The optical bandgap measurements of In{sub x}Al{sub 1-x}N NWs are demonstrated by SE where the absorption edges of the NW samples are evaluated irrespective of substrate transparency. A systematic Stoke shift of 0.04–0.27 eV with increasing x was observed when comparing the micro-photoluminescence spectra with the Tauc plot derived from SE. The micro-Raman spectra in the NWs with x = 0.5 showed two-mode behavior for A{sub 1}(LO) phonons and single mode behavior for E{sub 2}{sup H} phonons. As for x = 0.17, i.e., high Al content, we observed a peculiar E{sub 2}{sup H} phonon mode splitting. Further, we observe composition dependent frequency shifts. The 77 to 600 K micro-Raman spectroscopy measurements show that both AlN- and InN-like modes of A{sub 1}(LO) and E{sub 2}{sup H} phonons in In{sub x}Al{sub 1-x}N NWs are redshifted with increasing temperature, similar to that of the binary III group nitride semiconductors. These studies of the optical properties of the technologically important In{sub x}Al{sub 1-x}N nanowires will path the way towards lasers and light-emitting diodes in the wavelength of the ultra-violet and visible range.

  18. Characterization and modelling of microwave multi dipole plasmas. Application to multi dipolar plasma assisted sputtering; Caracterization et modelisation des plasmas micro-onde multi-dipolaires. Application a la pulverisation assistee par plasma multi-dipolaire

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Tan Vinh [Universite Joseph Fourier/CNRS-IN2P3, 53 Avenue des Martyrs, F-38026 Grenoble (France)

    2006-07-01

    the magnet has also shown a better radial confinement with magnets exhibiting high length over diameter ratios. In addition, the numerical study corroborates the results of the experimental study, i.e. an ECR coupling region close to the equatorial plane of the magnet and not near the end of the coaxial microwave line. Finally, these results have been successfully applied to plasma assisted sputtering of targets allowing, in particular, their uniform erosion. (author)

  19. Assessment of water vapor content from MIVIS TIR data

    Directory of Open Access Journals (Sweden)

    V. Tramutoli

    2006-06-01

    Full Text Available The main objective of land remotely sensed images is to derive biological, chemical and physical parameters by inverting sample sets of spectral data. For the above aim hyperspectral scanners on airborne platform are a powerful remote sensing instrument for both research and environmental applications because of their spectral resolution and the high operability of the platform. Fine spectral information by MIVIS (airborne hyperspectral scanner operating in 102 channels ranging from VIS to TIR allows researchers to characterize atmospheric parameters and their effects on measured data which produce undesirable features on surface spectral signatures. These effects can be estimated (and remotely sensed radiances corrected if atmospheric spectral transmittance is known at each image pixel. Usually ground-based punctual observations (atmospheric sounding balloons, sun photometers, etc. are used to estimate the main physical parameters (like water vapor and temperature profiles which permit us to estimate atmospheric spectral transmittance by using suitable radiative transfer model and a specific (often too strong assumption which enable atmospheric properties measured only in very few points to be extended to the whole image. Several atmospheric gases produce observable absorption features, but only water vapor strongly varies in time and space. In this work the authors customize a self-sufficient «split-window technique» to derive (at each image pixel atmospheric total columnar water vapor content (TWVC using only MIVIS data collected by the fourth MIVIS spectrometer (Thermal Infrared band. MIVIS radiances have been simulated by means of MODTRAN4 radiative transfer code and the coefficients of linear regression to estimate TWVC from «split-windows» MIVIS radiances, based on 450 atmospheric water vapor profiles obtained by radiosonde data provided by NOAANESDIS. The method has been applied to produce maps describing the spatial variability of

  20. Low temperature measurement of the vapor pressures of planetary molecules

    Science.gov (United States)

    Kraus, George F.

    1989-01-01

    Interpretation of planetary observations and proper modeling of planetary atmospheres are critically upon accurate laboratory data for the chemical and physical properties of the constitutes of the atmospheres. It is important that these data are taken over the appropriate range of parameters such as temperature, pressure, and composition. Availability of accurate, laboratory data for vapor pressures and equilibrium constants of condensed species at low temperatures is essential for photochemical and cloud models of the atmospheres of the outer planets. In the absence of such data, modelers have no choice but to assume values based on an educated guess. In those cases where higher temperature data are available, a standard procedure is to extrapolate these points to the lower temperatures using the Clausius-Clapeyron equation. Last summer the vapor pressures of acetylene (C2H2) hydrogen cyanide (HCN), and cyanoacetylene (HC3N) was measured using two different methods. At the higher temperatures 1 torr and 10 torr capacitance manometers were used. To measure very low pressures, a technique was used which is based on the infrared absorption of thin film (TFIR). This summer the vapor pressure of acetylene was measured the TFIR method. The vapor pressure of hydrogen sulfide (H2S) was measured using capacitance manometers. Results for H2O agree with literature data over the common range of temperature. At the lower temperatures the data lie slightly below the values predicted by extrapolation of the Clausius-Clapeyron equation. Thin film infrared (TFIR) data for acetylene lie significantly below the values predicted by extrapolation. It is hoped to bridge the gap between the low end of the CM data and the upper end of the TFIR data in the future using a new spinning rotor gauge.

  1. Runaway electron beam control for longitudinally pumped metal vapor lasers

    Science.gov (United States)

    Kolbychev, G. V.; Kolbycheva, P. D.

    1995-08-01

    Physics and techniques for producing of the pulsed runaway electron beams are considered. The main obstacle for increasing electron energies in the beams is revealed to be a self- breakdown of the e-gun's gas-filled diode. Two methods to suppress the self-breakdown and enhance the volumetric discharge producing the e-beam are offered and examined. Each of them provides 1.5 fold increase of the ceiling potential on the gun. The methods also give the ways to control several guns simultaneously. Resulting in the possibility of realizing the powerful longitudinal pumping of metal-vapor lasers on self-terminated transitions of atoms or ions.

  2. Water vapor retrieval over many surface types

    Energy Technology Data Exchange (ETDEWEB)

    Borel, C.C.; Clodius, W.C.; Johnson, J.

    1996-04-01

    In this paper we present a study of of the water vapor retrieval for many natural surface types which would be valuable for multi-spectral instruments using the existing Continuum Interpolated Band Ratio (CIBR) for the 940 nm water vapor absorption feature. An atmospheric code (6S) and 562 spectra were used to compute the top of the atmosphere radiance near the 940 nm water vapor absorption feature in steps of 2.5 nm as a function of precipitable water (PW). We derive a novel technique called ``Atmospheric Pre-corrected Differential Absorption`` (APDA) and show that APDA performs better than the CIBR over many surface types.

  3. Rendimento e composição físico-química do queijo prato elaborado com leite pasteurizado pelo sistema HTST e injeção direta de vapor Yield and physical-chemistry composition of prato cheese elaborated with milk pasteurized by the HTST and direct steam injection

    Directory of Open Access Journals (Sweden)

    Patricia Rodrigues da Silveira

    2003-12-01

    Full Text Available Avaliaram-se o rendimento, a transição de gordura e extrato seco do leite para a coalhada e as características físico-químicas do queijo prato produzido com leite pasteurizado pelo sistema de placas (ou HTST e injeção direta de vapor (IDV. Utilizou-se o delineamento inteiramente casualizado, constituído por dois tratamentos (HTST e IDV e seis repetições (fabricações. O sistema IDV incorporou cerca de 8,5% de água ao leite, havendo como conseqüência redução (PCheese yield, fat and dry matter transitions from milk pasteurized by the two pasteurization systems to the curd, as well as, the physical-chemistry characteristics of cheeses were evaluated. The statistical treatment was full randomly, with two treatments: pasteurization by high temperature short time system (HTST and direct steam injection (DSI, with six replications. The DSI system incorporated about 8,5% of water to the milk, having as consequence reduction (P<.05 in the total solids, in the fat and in the acidity of the pasteurized milk. Larger transition of fat of the milk to the curd was observed, when this was pasteurized by the DSI system, it resulted in larger cheeses yield manufactured with milk pasteurized by this system. (8.48 liters of milk /kg of cheese, when compared to the HTST system (9.54 liters of milk /kg of cheese. Cheeses manufactured by the DSI system presented higher fat content and fat in dry matter (29.06 and 55.25%, compared to the HTST system (27.02 and 49.88%, respectively. The DSI system provides expressive increases in the cheeses yield and, of the components of the milk it was conclude that the fat was the main responsible for this increase.

  4. Novel thermal barrier coatings based on La{sub 2}(Zr{sub 0.7}Ce{sub 0.3}){sub 2}O{sub 7}/8YSZ double-ceramic-layer systems deposited by electron beam physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu Zhenhua, E-mail: zhxuciac@yahoo.com.cn [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); He Shimei; He Limin; Mu Rende; Huang Guanghong [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Cao Xueqiang [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

    2011-03-17

    Research highlights: > LZ7C3 and YSZ have good chemical compatibility for the formation of DCL coating. > DCL coating has a longer lifetime than that of single layer coating of LZ7C3 or YSZ. > Similar TECs of LZ7C3 with YSZ coatings and YSZ coating with TGO layer. > Unique growth modes of columns within DCL coating. > Outward diffusion of Cr element (bond coat) into LZ7C3 layer. - Abstract: Double-ceramic-layer (DCL) thermal barrier coatings (TBCs) of La{sub 2}(Zr{sub 0.7}Ce{sub 0.3}){sub 2}O{sub 7} (LZ7C3) and yttria stabilized zirconia (YSZ) were deposited by electron beam-physical vapor deposition (EB-PVD). The thermal cycling test at 1373 K in an air furnace indicates the DCL coating has a much longer lifetime than the single layer LZ7C3 coating, and even longer than that of the single layer YSZ coating. The superior sintering-resistance of LZ7C3 coating, the similar thermal expansion behaviors of YSZ interlayer with LZ7C3 coating and thermally grown oxide (TGO) layer, and the unique growth modes of columns within DCL coating are all very helpful to the prolongation of thermal cycling life of DCL coating. The failure of DCL coating is mainly a result of the reduction-oxidation of cerium oxide, the crack initiation, propagation and extension, the abnormal oxidation of bond coat, the degradation of t'-phase in YSZ coating and the outward diffusion of Cr alloying element into LZ7C3 coating.

  5. Water Vapor Permeation in Plastics

    Energy Technology Data Exchange (ETDEWEB)

    Keller, Paul E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Kouzes, Richard T. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2017-01-01

    Polyvinyl toluene (PVT) and polystyrene (PS) (referred to as “plastic scintillator”) are used for gamma ray detectors. A significant decrease in radiation detection performance has been observed in some PVT-based gamma-ray detectors in systems in outdoor environments as they age. Recent studies have revealed that plastic scintillator can undergo an environmentally related material degradation that adversely affects gamma ray detection performance under certain conditions and histories. A significant decrease in sensitivity has been seen in some gamma-ray detectors in some systems as they age. The degradation of sensitivity of plastic scintillator over time is due to a variety of factors, and the term “aging” is used to encompass all factors. Some plastic scintillator samples show no aging effects (no significant change in sensitivity over more than 10 years), while others show severe aging (significant change in sensitivity in less than 5 years). Aging effects arise from weather (variations in heat and humidity), chemical exposure, mechanical stress, light exposure, and loss of volatile components. The damage produced by these various causes can be cumulative, causing observable damage to increase over time. Damage may be reversible up to some point, but becomes permanent under some conditions. The objective of this report is to document the phenomenon of permeability of plastic scintillator to water vapor and to derive the relationship between time, temperature, humidity and degree of water penetration in plastic. Several conclusions are documented about the properties of water permeability of plastic scintillator.

  6. Investigation on energetics of ex-vessel vapor explosion based on spontaneous nucleation fragmentation

    International Nuclear Information System (INIS)

    Liu, Jie; Koshizuka, Seiichi; Oka, Yoshiaki

    2002-01-01

    A computer code PROVER-I is developed for propagation phase of vapor explosion. A new thermal fragmentation model is proposed with three kinds of time scale for modeling instant fragmentation, spontaneous nucleation fragmentation and normal boiling fragmentation. The energetics of ex-vessel vapor explosion is investigated based on different fragmentation models. A higher pressure peak and a larger mechanical energy conversion ratio are obtained by spontaneous nucleation fragmentation. A smaller energy conversion ratio results from normal boiling fragmentation. When the delay time in thermal fragmentation model is near 0.0 ms, the pressure propagation behavior tends to be analogous with that in hydrodynamic fragmentation. If the delay time is longer, pressure attenuation occurs at the shock front. The high energy conversion ratio (>4%) is obtained in a small vapor volume fraction together with spontaneous nucleation fragmentation. These results are consistent with fuel-coolant interaction experiments with alumina melt. However, in larger vapor volume fraction conditions (α υ >0.3), the vapor explosion is weak. For corium melt, a coarse mixture with void fraction of more than 30% can be generated in the pre-mixing process because of its physical properties. In the mixture with such a high void fraction the energetic vapor explosion hardly takes place. (author)

  7. Half-sandwich cobalt complexes in the metal-organic chemical vapor deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Georgi, Colin [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Hapke, Marko; Thiel, Indre [Leibniz-Institut für Katalyse e.V. an der Universität Rostock (LIKAT), Albert-Einstein-Straße 29a, Rostock 18059 (Germany); Hildebrandt, Alexander [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Waechtler, Thomas; Schulz, Stefan E. [Fraunhofer Institute of Electronic Nano Systems (ENAS), Technologie-Campus 3, Chemnitz 09126 (Germany); Technische Universität Chemnitz, Center for Microtechnologies (ZfM), Chemnitz 09107 (Germany); Lang, Heinrich, E-mail: heinrich.lang@chemie.tu-chemnitz.de [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany)

    2015-03-02

    A series of cobalt half-sandwich complexes of type [Co(η{sup 5}-C{sub 5}H{sub 5})(L)(L′)] (1: L, L′ = 1,5-hexadiene; 2: L = P(OEt){sub 3}, L′ = H{sub 2}C=CHSiMe{sub 3}; 3: L = L′ = P(OEt){sub 3}) has been studied regarding their physical properties such as the vapor pressure, decomposition temperature and applicability within the metal-organic chemical vapor deposition (MOCVD) process, with a focus of the influence of the phosphite ligands. It could be shown that an increasing number of P(OEt){sub 3} ligands increases the vapor pressure and thermal stability of the respective organometallic compound. Complex 3 appeared to be a promising MOCVD precursor with a high vapor pressure and hence was deposited onto Si/SiO{sub 2} (100 nm) substrates. The resulting reflective layer is closed, dense and homogeneous, with a slightly granulated surface morphology. X-ray photoelectron spectroscopy (XPS) studies demonstrated the formation of metallic cobalt, cobalt phosphate, cobalt oxide and cobalt carbide. - Highlights: • Thermal studies and vapor pressure measurements of cobalt half-sandwich complexes was carried out. • Chemical vapor deposition with cobalt half-sandwich complexes is reported. • The use of Co-phosphites results in significant phosphorous-doped metallic layers.

  8. Determination of Chlorinated Solvent Sorption by Porous Material-Application to Trichloroethene Vapor on Cement Mortar.

    Science.gov (United States)

    Musielak, Marion; Brusseau, Mark L; Marcoux, Manuel; Morrison, Candice; Quintard, Michel

    2014-08-01

    Experiments have been performed to investigate the sorption of trichloroethene (TCE) vapor by concrete material or, more specifically, the cement mortar component. Gas-flow experiments were conducted using columns packed with small pieces of cement mortar obtained from the grinding of typical concrete material. Transport and retardation of TCE at high vapor concentrations (500 mg L -1 ) was compared to that of a non-reactive gas tracer (Sulfur Hexafluoride, SF6). The results show a large magnitude of retardation (retardation factor = 23) and sorption (sorption coefficient = 10.6 cm 3 g -1 ) for TCE, compared to negligible sorption for SF6. This magnitude of sorption obtained with pollutant vapor is much bigger than the one obtained for aqueous-flow experiments conducted for water-saturated systems. The considerable sorption exhibited for TCE under vapor-flow conditions is attributed to some combination of accumulation at the air-water interface and vapor-phase adsorption, both of which are anticipated to be significant for this system given the large surface area associated with the cement mortar. Transport of both SF6 and TCE was simulated successfully with a two-region physical non-equilibrium model, consistent with the dual-medium structure of the crushed cement mortar. This work emphasizes the importance of taking into account sorption phenomena when modeling transport of volatile organic compounds through concrete material, especially in regard to assessing vapor intrusion.

  9. Recovery of Platinum Group Metals from Spent Catalysts Using Iron Chloride Vapor Treatment

    Science.gov (United States)

    Taninouchi, Yu-ki; Okabe, Toru H.

    2018-05-01

    The recovery of platinum group metals (PGMs) from spent automobile catalysts is a difficult process because of their relatively low contents in the scrap. In this study, to improve the efficiency of the existing recycling techniques, a novel physical concentration method involving treatment with FeCl2 vapor has been examined. The reactions occurring between typical catalyst components and FeCl2 vapor are discussed from the thermodynamic point of view, and the validity of the proposed technique was experimentally verified. The obtained results indicate that the vapor treatment at around 1200 K (927 °C) can effectively alloy PGMs (Pt, Pd, and Rh) with Fe, resulting in the formation of a ferromagnetic alloy. It was also confirmed that cordierite and alumina (the major catalyst components) remained unreacted after the vapor treatment, while ceria species were converted into oxychlorides. The samples simulating the automobile catalyst were also subjected to magnetic separation after the treatment with FeCl2 vapor; as a result, PGMs were successfully extracted and concentrated in the form of a magnetic powder. Thus, the FeCl2 vapor treatment followed by magnetic separation can be utilized for recovering PGMs directly from spent catalysts as an effective pretreatment for the currently used recycling methods.

  10. Point of net vapor generation and vapor void fraction in subcooled boiling

    International Nuclear Information System (INIS)

    Saha, P.; Zuber, N.

    1974-01-01

    An analysis is presented directed at predicting the point of net vapor generation and vapor void fraction in subcooled boiling. It is shown that the point of net vapor generation depends upon local conditions--thermal and fluid dynamic. Thus, at low mass flow rates the net vapor generation is determined by thermal conditions, whereas at high mass flow rates the phenomenon is hydrodynamically controlled. Simple criteria are derived which can be used to predict these local conditions for net vapor generation. These criteria are used to determine the vapor void fraction is subcooled boiling. Comparison between the results predicted by this analysis and experimental data presently available shows good agreement for wide range of operating conditions, fluids and geometries. (U.S.)

  11. GOES WATER VAPOR TRANSPORT V1

    Data.gov (United States)

    National Aeronautics and Space Administration — The GOES Water Vapor Transport CD contains nineteen months of geostationary satellite-derived products from the GOES-8 satellite spanning the 1987-1988 El Nino...

  12. Vaporization of Samarium trichloride studied by thermogravimetry

    International Nuclear Information System (INIS)

    Esquivel, Marcelo R.; Pasquevich, Daniel M.

    2003-01-01

    In the present work, the vaporization reaction of SmCl 3 (l) obtained from the 'in situ' reaction of Sm 2 O 3 (s) and Cl 2 (g)-C(s) was studied by thermogravimetry under controlled atmosphere. The effects of both the temperature between 825 C degrees and 950 C degrees and the total flow gas on the vaporization rate of the following reaction: SmCl 3 (l) = SmCl 3 (g) were analyzed. The vaporization rate of the process was found to be independent of then total gas flow rate and highly dependent on the temperature. E ap calculation led to a value of 240 ± 10 kJ.mol -1 . A comparison between this value and that of the molar enthalpy of vaporization allow to the conclusion that the reaction occur in conditions near to equilibrium. The SmCl 3 identity was determined by X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). (author)

  13. Fundamentals of Friction and Vapor Phase Lubrication

    National Research Council Canada - National Science Library

    Gellman, Andrew

    2004-01-01

    This is the final report for the three year research program on "Fundamentals of Friction and Vapor Phase Lubrication" conducted at Carnegie Mellon with support from AFOSR grant number F49630-01-1-0069...

  14. GOES WATER VAPOR TRANSPORT V1

    Data.gov (United States)

    National Aeronautics and Space Administration — The GOES Water Vapor Transport CD contains nineteen months of geostationary satellite-derived products spanning the 1987/1988 El Nino Southern Oscillation (ENSO)...

  15. Drag Reduction by Leidenfrost Vapor Layers

    KAUST Repository

    Vakarelski, Ivan Uriev; Marston, Jeremy O.; Chan, Derek Y. C.; Thoroddsen, Sigurdur T

    2011-01-01

    , we show that such vapor layers can reduce the hydrodynamic drag by over 85%. These results appear to approach the ultimate limit of drag reduction possible by different methods based on gas-layer lubrication and can stimulate the development

  16. DMSP SSMT/2 - Atmospheric Water Vapor Profiler

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The SSM/T-2 sensor is a five channel, total power microwave radiometer with three channels situated symmetrically about the 183.31 GHz water vapor resonance line and...

  17. 78 FR 42595 - Marine Vapor Control Systems

    Science.gov (United States)

    2013-07-16

    ... revise the substance As noted in the NPRM, the changes in this section were of this section. intended... the vapor-moving device, as recommended by CTAC in 1997 to maintain a minimum size of non-flammable...

  18. Metal Vapor Arcing Risk Assessment Tool

    Science.gov (United States)

    Hill, Monika C.; Leidecker, Henning W.

    2010-01-01

    The Tin Whisker Metal Vapor Arcing Risk Assessment Tool has been designed to evaluate the risk of metal vapor arcing and to help facilitate a decision toward a researched risk disposition. Users can evaluate a system without having to open up the hardware. This process allows for investigating components at risk rather than spending time and money analyzing every component. The tool points to a risk level and provides direction for appropriate action and documentation.

  19. A heated vapor cell unit for dichroic atomic vapor laser lock in atomic rubidium.

    Science.gov (United States)

    McCarron, Daniel J; Hughes, Ifan G; Tierney, Patrick; Cornish, Simon L

    2007-09-01

    The design and performance of a compact heated vapor cell unit for realizing a dichroic atomic vapor laser lock (DAVLL) for the D(2) transitions in atomic rubidium is described. A 5 cm long vapor cell is placed in a double-solenoid arrangement to produce the required magnetic field; the heat from the solenoid is used to increase the vapor pressure and correspondingly the DAVLL signal. We have characterized experimentally the dependence of important features of the DAVLL signal on magnetic field and cell temperature. For the weaker transitions both the amplitude and gradient of the signal are increased by an order of magnitude.

  20. A heated vapor cell unit for dichroic atomic vapor laser lock in atomic rubidium

    International Nuclear Information System (INIS)

    McCarron, Daniel J.; Hughes, Ifan G.; Tierney, Patrick; Cornish, Simon L.

    2007-01-01

    The design and performance of a compact heated vapor cell unit for realizing a dichroic atomic vapor laser lock (DAVLL) for the D 2 transitions in atomic rubidium is described. A 5 cm long vapor cell is placed in a double-solenoid arrangement to produce the required magnetic field; the heat from the solenoid is used to increase the vapor pressure and correspondingly the DAVLL signal. We have characterized experimentally the dependence of important features of the DAVLL signal on magnetic field and cell temperature. For the weaker transitions both the amplitude and gradient of the signal are increased by an order of magnitude

  1. Vapor Explosions with Subcooled Freon

    International Nuclear Information System (INIS)

    Henry, R.E.; Fauske, Hans K.; McUmber, L.M.

    1976-01-01

    Explosive vapor formation accompanied by destructive shock waves, can be produced when two liquids, at much different temperatures, are brought into intimate contact. A proposed analytical model states that the interface temperature upon contact between the two liquid systems, gust be greater than or equal to the spontaneous nucleation temperature of that liquid-liquid system and that the thermal boundary layer must be sufficiently developed to support a critical size cavity. For time scales greater than 10-12 sec, the interface temperature upon contact of two semi-infinite masses, with constant thermal properties, can be related to the initial liquid temperatures. The spontaneous nucleation behavior at the interface can either be heterogeneous or homogeneous in nature. In either case, the critical size cavities, which initiate the vaporization process, are produced by local density fluctuations within the cold liquid. For homogeneous conditions, the two liquids present a well-wetted system and the vapor embryos are produced entirely within the cold liquid. For heterogeneous conditions, which result from poor, or imperfect wetting, at the liquid-liquid interface, the critical sized cavities are created at the interface at somewhat lower temperatures. A sequence of experiments, using Freon-22 and water, Freon-22 and mineral oil, and Freon-12 and mineral oil have been performed to test this spontaneous nucleation premise. For Freon-22 at its normal boiling point, the interface temperature of the water must be at least 77 deg. C before the interface temperature equals or exceeds the minimum homogeneous nucleation value of 54 deg. C and 84 deg. C before the interface temperature equals 60 deg. C where the homogeneous nucleation rate becomes truly explosive. The Freon-water test demonstrated explosive interactions for water temperatures considerably lower than this value and this was attributed to the heterogeneous nucleation characteristics of that particular system

  2. Effect of impact angle on vaporization

    Science.gov (United States)

    Schultz, Peter H.

    1996-09-01

    Impacts into easily vaporized targets such as dry ice and carbonates generate a rapidly expanding vapor cloud. Laboratory experiments performed in a tenuous atmosphere allow deriving the internal energy of this cloud through well-established and tested theoretical descriptions. A second set of experiments under near-vacuum conditions provides a second measure of energy as the internal energy converts to kinetic energy of expansion. The resulting data allow deriving the vaporized mass as a function of impact angle and velocity. Although peak shock pressures decrease with decreasing impact angle (referenced to horizontal), the amount of impact-generated vapor is found to increase and is derived from the upper surface. Moreover, the temperature of the vapor cloud appears to decrease with decreasing angle. These unexpected results are proposed to reflect the increasing roles of shear heating and downrange hypervelocity ricochet impacts created during oblique impacts. The shallow provenance, low temperature, and trajectory of such vapor have implications for larger-scale events, including enhancement of atmospheric and biospheric stress by oblique terrestrial impacts and impact recycling of the early atmosphere of Mars.

  3. Attenuation of concentration fluctuations of water vapor and other trace gases in turbulent tube flow

    Directory of Open Access Journals (Sweden)

    W. J. Massman

    2008-10-01

    Full Text Available Recent studies with closed-path eddy covariance (EC systems have indicated that the attenuation of fluctuations of water vapor concentration is dependent upon ambient relative humidity, presumably due to sorption/desorption of water molecules at the interior surface of the tube. Previous studies of EC-related tube attenuation effects have either not considered this issue at all or have only examined it superficially. Nonetheless, the attenuation of water vapor fluctuations is clearly much greater than might be expected from a passive tracer in turbulent tube flow. This study reexamines the turbulent tube flow issue for both passive and sorbing tracers with the intent of developing a physically-based semi-empirical model that describes the attenuation associated with water vapor fluctuations. Toward this end, we develop a new model of tube flow dynamics (radial profiles of the turbulent diffusivity and tube airstream velocity. We compare our new passive-tracer formulation with previous formulations in a systematic and unified way in order to assess how sensitive the passive-tracer results depend on fundamental modeling assumptions. We extend the passive tracer model to the vapor sorption/desorption case by formulating the model's wall boundary condition in terms of a physically-based semi-empirical model of the sorption/desorption vapor fluxes. Finally we synthesize all modeling and observational results into a single analytical expression that captures the effects of the mean ambient humidity and tube flow (Reynolds number on tube attenuation.

  4. Analysis of Petrol and Diesel Vapor Using Selective Ion Flow Tube/Mass Spectrometry

    Czech Academy of Sciences Publication Activity Database

    Ping, CH.; Weijun, Z.; Yaman, CH.; Španěl, Patrik; Smith, D.

    2003-01-01

    Roč. 5, - (2003), s. 548-551 ISSN 0253-3820 Institutional research plan: CEZ:AV0Z4040901 Keywords : selected ion flow tube/mass spectrometry * fuel vapor Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 0.224, year: 2003

  5. Statistical mechanical perturbation theory of solid-vapor interfacial free energy

    NARCIS (Netherlands)

    Kalikmanov, Vitalij Iosifovitsj; Hagmeijer, Rob; Venner, Cornelis H.

    2017-01-01

    The solid–vapor interfacial free energy γsv plays an important role in a number of physical phenomena, such as adsorption, wetting, and adhesion. We propose a closed form expression for the orientation averaged value of this quantity using a statistical mechanical perturbation approach developed in

  6. Statistical Mechanical Perturbation Theory of Solid−Vapor Interfacial Free Energy

    NARCIS (Netherlands)

    Kalikmanov, V.I.; Hagmeijer, R.; Venner, C.H.

    2017-01-01

    The solid–vapor interfacial free energy γsv plays an important role in a number of physical phenomena, such as adsorption, wetting, and adhesion. We propose a closed form expression for the orientation averaged value of this quantity using a statistical mechanical perturbation approach developed in

  7. CVB: The Constrained Vapor Bubble 40 mm Capillary Experiment on the ISS

    Science.gov (United States)

    Wayner, Peter C., Jr.; Kundan, Akshay; Plawsky, Joel

    2013-01-01

    Discuss the Constrained Vapor Bubble (CVB) 40mm Fin experiment on the ISS and how it aims to achieve a better understanding of the physics of evaporation and condensation and how they affect cooling processes in microgravity using a remotely controlled microscope and a small cooling device

  8. Ion - beam assisted process in the physical deposition of organic thin layers

    Energy Technology Data Exchange (ETDEWEB)

    Dimov, D; Spassova, E; Assa, J; Danev, G [Acad. J .Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl.109, 1113 Sofia (Bulgaria); Georgiev, A, E-mail: dean@clf.bas.b [University of Chemical Technology and Metallurgy, 8 Kl. Ohridski Blvd., 1756 Sofia (Bulgaria)

    2010-04-01

    A novel method was developed for physical deposition of thin polyimide layers by applying an argon plasma assisted process. The influence was investigated of the plasma on the combined molecular flux of the two thermally evaporated precursors - oxydianiline and pyromellitic dianhydride. The effects observed on the properties of the deposited films are explained with the increased energy of the precursor molecules resulting from the ion-molecular collisions. As could be expected, molecules with higher energy possess higher mobility and thus determine the modification of the films structure and their electrical properties.

  9. Water Vapor Tracers as Diagnostics of the Regional Hydrologic Cycle

    Science.gov (United States)

    Bosilovich, Michael G.; Schubert, Siegfried D.; Einaudi, Franco (Technical Monitor)

    2001-01-01

    Numerous studies suggest that local feedback of surface evaporation on precipitation, or recycling, is a significant source of water for precipitation. Quantitative results on the exact amount of recycling have been difficult to obtain in view of the inherent limitations of diagnostic recycling calculations. The current study describes a calculation of the amount of local and remote geographic sources of surface evaporation for precipitation, based on the implementation of three-dimensional constituent tracers of regional water vapor sources (termed water vapor tracers, WVT) in a general circulation model. The major limitation on the accuracy of the recycling estimates is the veracity of the numerically simulated hydrological cycle, though we note that this approach can also be implemented within the context of a data assimilation system. In the WVT approach, each tracer is associated with an evaporative source region for a prognostic three-dimensional variable that represents a partial amount of the total atmospheric water vapor. The physical processes that act on a WVT are determined in proportion to those that act on the model's prognostic water vapor. In this way, the local and remote sources of water for precipitation can be predicted within the model simulation, and can be validated against the model's prognostic water vapor. As a demonstration of the method, the regional hydrologic cycles for North America and India are evaluated for six summers (June, July and August) of model simulation. More than 50% of the precipitation in the Midwestern United States came from continental regional sources, and the local source was the largest of the regional tracers (14%). The Gulf of Mexico and Atlantic regions contributed 18% of the water for Midwestern precipitation, but further analysis suggests that the greater region of the Tropical Atlantic Ocean may also contribute significantly. In most North American continental regions, the local source of precipitation is

  10. A Simple Experiment for Determining Vapor Pressure and Enthalpy of Vaporization of Water.

    Science.gov (United States)

    Levinson, Gerald S.

    1982-01-01

    Laboratory procedures, calculations, and sample results are described for a freshman chemistry experiment in which the Clausius-Clapeyron equation is introduced as a means of describing the variation of vapor pressure with temperature and for determining enthalpy of vaporization. (Author/SK)

  11. Vapor pressure and enthalpy of vaporization of oil of catnip by correlation gas chromatography

    International Nuclear Information System (INIS)

    Simmons, Daniel; Gobble, Chase; Chickos, James

    2016-01-01

    Highlights: • Vaporization enthalpies of the nepetalactones from oil of catnip have been evaluated. • Vapor pressures from T = (298.15 to 350) K have been evaluated. • Oil of catnip has a vapor pressure similar to DEET at T = 298.15 K. - Abstract: The vaporization enthalpy and vapor pressure of the two nepetalactones found in Nepeta cataria have been evaluated by correlation gas chromatography. Vaporization enthalpies at T = 298.15 K of {(68.0 ± 1.9) and (69.4 ± 1.9)} kJ ⋅ mol"−"1 have been derived for the minor diastereomer, (4aS,7S,7aS)-nepetalactone, and major one, (4aS,7S,7aR)-nepetalactone, respectively. Vapor pressures also at T = 298.15 K of p = (1.2 ± 0.04) Pa and (0.91 ± 0.03) Pa have been evaluated for the minor and the major stereoisomer. In addition to being of interest because of the remarkable effect it has on various felids, oil of catnip is also quite effective in repelling mosquitoes, comparable to diethyl-m-toluamide (DEET). The vapor pressures evaluated in this work suggest that the two stereoisomers have similar volatility to DEET at ambient temperatures.

  12. Vapor pressures and enthalpies of vaporization of a series of the linear aliphatic aldehydes

    Czech Academy of Sciences Publication Activity Database

    Verevkin, S. P.; Krasnykh, E. L.; Vasiltsova, T. V.; Koutek, Bohumír; Doubský, Jan; Heintz, A.

    2003-01-01

    Roč. 206, - (2003), s. 331-339 ISSN 0378-3812 Institutional research plan: CEZ:AV0Z4055905 Keywords : aldehydes * vapor pressure * enthalpy of vaporization Subject RIV: CC - Organic Chemistry Impact factor: 1.165, year: 2003

  13. Vapor pressures and vaporization enthalpy of codlemone by correlation gas chromatography

    International Nuclear Information System (INIS)

    Schultz, Shannon M.; Harris, Harold H.; Chickos, James S.

    2015-01-01

    Highlights: • The vaporization enthalpy of codlemone has been evaluated. • The vapor pressure of codlemone has been evaluated from T = (298.15 to T b ) K. • Vapor pressures for the 1-alkanols standards are available from T = (298.15 to 500) K. - Abstract: The vapor pressure and vaporization enthalpy of codlemone (trans, trans 8,10-dodecadien-1-ol), the female sex hormone of the codling moth is evaluated by correlation gas chromatography using a series of saturated primary alcohols as standards. A vaporization enthalpy of (92.3 ± 2.6) kJ · mol −1 and a vapor pressure, p/Pa = (0.083 ± 0.012) were evaluated at T = 298.15 K. An equation for the evaluation of vapor pressure from ambient temperature to boiling has been derived by correlation for codlemone. The calculated boiling temperature of T B = 389 K at p = 267 Pa is within the temperature range reported in the literature. A normal boiling temperature of T B = (549.1 ± 0.1) K is also estimated by extrapolation

  14. Evidence of a sewer vapor transport pathway at the USEPA vapor intrusion research duplex

    Science.gov (United States)

    The role of sewer lines as preferential pathways for vapor intrusion is poorly understood. Although the importance of sewer lines for volatile organic compound (VOC) transport has been documented at a small number of sites with vapor intrusion, sewer lines are not routinely sampl...

  15. Vapor pressures of (3-(Dimethylamino)propyl)dimethylindium, (tert-Butylimino)bis(diethylamino)cyclopentadienyltantalum, and (tert-Butylimino)tris(ethylmethylamino)tantalum

    Czech Academy of Sciences Publication Activity Database

    Morávek, Pavel; Pangrác, Jiří; Fulem, Michal; Hulicius, Eduard; Růžička, K.

    2014-01-01

    Roč. 59, č. 12 (2014), s. 4179-4183 ISSN 0021-9568 Institutional support: RVO:68378271 Keywords : vapor pressure * static method * organometallics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.037, year: 2014

  16. MICHIGAN SOIL VAPOR EXTRACTION REMEDIATION (MISER) MODEL: A COMPUTER PROGRAM TO MODEL SOIL VAPORT EXTRACTION AND BIOVENTING OF ORGANIC MATERIALS IN UNSATURATED GEOLOGICAL MATERIAL

    Science.gov (United States)

    This report describes the formulation, numerical development, and use of a multiphase, multicomponent, biodegradation model designed to simulate physical, chemical, and biological interactions occurring primarily in field scale soil vapor extraction (SVE) and bioventing (B...

  17. Water vapor profiling using microwave radiometry

    Science.gov (United States)

    Wang, J. R.; Wilheit, T. T.

    1988-01-01

    Water vapor is one of the most important constituents in the Earth's atmosphere. Its spatial and temporal variations affect a wide spectrum of meteorological phenomena ranging from the formation of clouds to the development of severe storms. The passive microwave technique offers an excellent means for water vapor measurements. It can provide both day and night coverage under most cloud conditions. Two water vapor absorption features, at 22 and 183 GHz, were explored in the past years. The line strengths of these features differ by nearly two orders of magnitude. As a consequence, the techniques and the final products of water vapor measurements are also quite different. The research effort in the past few years was to improve and extend the retrieval algorithm to the measurements of water vapor profiles under cloudy conditions. In addition, the retrieval of total precipitable water using 183 GHz measurements, but in a manner analogous to the use of 22 GHz measurements, to increase measurement sensitivity for atmospheres of very low moisture content was also explored.

  18. Control of sodium vapor transport in annuli

    International Nuclear Information System (INIS)

    Meadows, G.E.; Bohringer, A.P.

    1983-11-01

    The method used to control sodium vapor transport in the annuli of various components at the Fast Flux Test Facility (FFTF) is a downward purge of the annuli with high purity argon. The purge rates for the FFTF were selected by calculating the gas velocity required to overcome thermal convection transport in the annuli. To evaluate the effectiveness of the gas purge, laboratory apparatus was fabricated which simulated selected annuli in the FFTF In-Vessel Handling Machine (IVHM) and the Instrument Tree (IT) annuli. Tests were conducted at temperatures similar to FFTF conditions. Gas purge rates ranged from zero to 130% of FFTF flow rates. Test results show the effectiveness of a high purity gas purge in decreasing the accumulation of sodium vapor deposits in an annulus. The presence of water vapor and oxygen in the purge gas increased the sodium deposition rate by a factor of three over other tests usig high purity argon. The presence of a vapor control collar used in the IT annulus was shown to be beneficial for controlling vapor transport into the upper region of the annulus

  19. Vapor pressure and thermodynamics of beryllium carbide

    International Nuclear Information System (INIS)

    Rinehart, G.H.; Behrens, R.G.

    1980-01-01

    The vapor pressure of beryllium carbide has been measured over the temperature range 1388 to 1763 K using Knudsen-effusion mass spectrometry. Vaporization occurs incongruently according to the reaction Be 2 C(s) = 2Be(g) + C(s). The equilibrium vapor pressure above the mixture of Be 2 C and C over the experimental temperature range is (R/J K -1 mol -1 )ln(p/Pa) = -(3.610 +- 0.009) x 10 5 (K/T) + (221.43 +- 1.06). The third-law enthalpy change for the above reaction obtained from the present vapor pressures is ΔH 0 (298.15 K) = (740.5 +- 0.1) kJ mol -1 . The corresponding second-law result is ΔH 0 (298.15 K) = (732.0 +- 1.8) kJ mol -1 . The enthalpy of formation for Be 2 C(s) calculated from the present third-law vaporization enthalpy and the enthalpy of formation of Be(g) is ΔH 0 sub(f)(298.15 K) = -(92.5 +- 15.7) kJ mol -1 . (author)

  20. Vapor pumps and gas-driven machines

    International Nuclear Information System (INIS)

    Guillet, R.

    1991-01-01

    The vapor pump, patented in 1979 by Gaz de France, is an additional mass and heat exchanger which uses the combustion air of fuel-burning machines as an additional cold source. This cold source is preheated and, above all, humidified before reaching the burner, by means of the residual sensible and latent heat in the combustion products of the fuel-burning process. This final exchanger thus makes it possible, in many cases, to recover all the gross calorific value of natural gas, even when the combustion products leave the process at a wet temperature greater than 60 0 C, the maximum dew point of the products of normal combustion. Another significant advantage of the vapor pump being worth highlighting is the selective recycling of water vapor by the vapor pump which reduces the adiabatic combustion temperature and the oxygen concentration in the combustion air, two factors which lead to considerable reductions in nitrogen oxides formation, hence limiting atmospheric pollution. Alongside a wide range of configurations which make advantageous use of the vapor pump in association with gas-driven machines and processes, including gas turbines, a number of boiler plant installations are also presented [fr

  1. Distribution of tropical tropospheric water vapor

    Science.gov (United States)

    Sun, De-Zheng; Lindzen, Richard S.

    1993-01-01

    Utilizing a conceptual model for tropical convection and observational data for water vapor, the maintenance of the vertical distribution of the tropical tropospheric water vapor is discussed. While deep convection induces large-scale subsidence that constrains the turbulent downgradient mixing to within the convective boundary layer and effectively dries the troposphere through downward advection, it also pumps hydrometeors into the upper troposphere, whose subsequent evaporation appears to be the major source of moisture for the large-scale subsiding motion. The development of upper-level clouds and precipitation from these clouds may also act to dry the outflow, thus explaining the low relative humidity near the tropopause. A one-dimensional model is developed to simulate the mean vertical structure of water vapor in the tropical troposphere. It is also shown that the horizontal variation of water vapor in the tropical troposphere above the trade-wind boundary layer can be explained by the variation of a moisture source that is proportional to the amount of upper-level clouds. Implications for the nature of water vapor feedback in global warming are discussed.

  2. Thermodynamics and Kinetics of Silicate Vaporization

    Science.gov (United States)

    Jacobson, Nathan S.; Costa, Gustavo C. C.

    2015-01-01

    Silicates are a common class of materials that are often exposed to high temperatures. The behavior of these materials needs to be understood for applications as high temperature coatings in material science as well as the constituents of lava for geological considerations. The vaporization behavior of these materials is an important aspect of their high temperature behavior and it also provides fundamental thermodynamic data. The application of Knudsen effusion mass spectrometry (KEMS) to silicates is discussed. There are several special considerations for silicates. The first is selection of an appropriate cell material, which is either nearly inert or has well-understood interactions with the silicate. The second consideration is proper measurement of the low vapor pressures. This can be circumvented by using a reducing agent to boost the vapor pressure without changing the solid composition or by working at very high temperatures. The third consideration deals with kinetic barriers to vaporization. The measurement of these barriers, as encompassed in a vaporization coefficient, is discussed. Current measured data of rare earth silicates for high temperature coating applications are discussed. In addition, data on magnesium-iron-silicates (olivine) are presented and discussed.

  3. A Numerical Investigation of Vapor Intrusion — the Dynamic Response of Contaminant Vapors to Rainfall Events

    Science.gov (United States)

    Shen, Rui; Pennell, Kelly G.; Suuberg, Eric M.

    2013-01-01

    The U.S. government and various agencies have published guidelines for field investigation of vapor intrusion, most of which suggest soil gas sampling as an integral part of the investigation. Contaminant soil gas data are often relatively more stable than indoor air vapor concentration measurements, but meteorological conditions might influence soil gas values. Although a few field and numerical studies have considered some temporal effects on soil gas vapor transport, a full explanation of the contaminant vapor concentration response to rainfall events is not available. This manuscript seeks to demonstrate the effects on soil vapor transport during and after different rainfall events, by applying a coupled numerical model of fluid flow and vapor transport. Both a single rainfall event and seasonal rainfall events were modeled. For the single rainfall event models, the vapor response process could be divided into three steps: namely, infiltration, water redistribution, and establishment of a water lens atop the groundwater source. In the infiltration step, rainfall intensity was found to determine the speed of the wetting front and wash-out effect on the vapor. The passage of the wetting front led to an increase of the vapor concentration in both the infiltration and water redistribution steps and this effect is noted at soil probes located 1 m below the ground surface. When the mixing of groundwater with infiltrated water was not allowed, a clean water lens accumulated above the groundwater source and led to a capping effect which can reduce diffusion rates of contaminant from the source. Seasonal rainfall with short time intervals involved superposition of the individual rainfall events. This modeling results indicated that for relatively deeper soil that the infiltration wetting front could not flood, the effects were damped out in less than a month after rain; while in the long term (years), possible formation of a water lens played a larger role in

  4. Auxiliary Electrodes for Chromium Vapor Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Fergus, Jeffrey; Shahzad, Moaiz; Britt, Tommy

    2018-05-15

    Measurement of chromia-containing vapors in solid oxide fuel cell systems is useful for monitoring and addressing cell degradation caused by oxidation of the chomia scale formed on alloys for interconnects and balance-of-plant components. One approach to measuring chromium is to use a solid electrolyte with an auxiliary electrode that relates the partial pressure of the chromium containing species to the mobile species in the electrolyte. One example is YCrO3 which can equilibrate with the chromium containing vapor and yttrium in yttria stabilized zirconia to establish an oxygen activity. Another is Na2CrO4 which can equilibrate with the chromium-containing vapor to establish a sodium activity.

  5. Monolithic microwave integrated circuit water vapor radiometer

    Science.gov (United States)

    Sukamto, L. M.; Cooley, T. W.; Janssen, M. A.; Parks, G. S.

    1991-01-01

    A proof of concept Monolithic Microwave Integrated Circuit (MMIC) Water Vapor Radiometer (WVR) is under development at the Jet Propulsion Laboratory (JPL). WVR's are used to remotely sense water vapor and cloud liquid water in the atmosphere and are valuable for meteorological applications as well as for determination of signal path delays due to water vapor in the atmosphere. The high cost and large size of existing WVR instruments motivate the development of miniature MMIC WVR's, which have great potential for low cost mass production. The miniaturization of WVR components allows large scale deployment of WVR's for Earth environment and meteorological applications. Small WVR's can also result in improved thermal stability, resulting in improved calibration stability. Described here is the design and fabrication of a 31.4 GHz MMIC radiometer as one channel of a thermally stable WVR as a means of assessing MMIC technology feasibility.

  6. Numerical modeling of a vaporizing multicomponent droplet

    Science.gov (United States)

    Megaridis, C. M.; Sirignano, W. A.

    The fundamental processes governing the energy, mass, and momentum exchange between the liquid and gas phases of vaporizing, multicomponent liquid droplets have been investigated. The axisymmetric configuration under consideration consists of an isolated multicomponent droplet vaporizing in a convective environment. The model considers different volatilities of the liquid components, variable liquid properties due to variation of the species concentrations, and non-Fickian multicomponent gaseous diffusion. The bicomponent droplet model was employed to examine the commonly used assumptions of unity Lewis number in the liquid phase and Fickian gaseous diffusion. It is found that the droplet drag coefficients, the vaporization rates, and the related transfer numbers are not influenced by the above assumptions in a significant way.

  7. Safety assessment of in-vessel vapor explosion loads in next generation reactor

    Energy Technology Data Exchange (ETDEWEB)

    Bang, Kwang Hyun; Cho, Jong Rae; Choi, Byung Uk; Kim, Ki Yong; Lee, Kyung Jung [Korea Maritime University, Busan (Korea); Park, Ik Kyu [Seoul National University, Seoul (Korea)

    1998-12-01

    A safety assessment of the reactor vessel lower head integrity under in-vessel vapor explosion loads has been performed. The premixing and explosion calculations were performed using TRACER-II code. Using the calculated explosion pressures imposed on the lower head inner wall, strain calculations were performed using ANSYS code. The explosion analyses show that the explosion impulses are not altered significantly by the uncertain parameters of triggering location and time, fuel and vapor volume fractions in uniform premixture bounding calculations within the conservative ranges. Strain analyses using the calculated pressure loads on the lower head inner wall show that the vapor explosion-induced lower head failure is physically unreasonable. The static analysis using the conservative explosion-end pressure of 7,246 psia shows that the maximum equivalent strain is 4.3% at the bottom of lower head, which is less than the allowable threshold value of 11%. (author). 24 refs., 40 figs., 3 tabs.

  8. Application of Discharges in Vapor of Evaporated Metals for the Film Deposition from the Ionized Stream

    International Nuclear Information System (INIS)

    Kostin, E.G.

    2006-01-01

    results of researches of the discharge device for ionization of the vapor of solid materials are presented. Evaporation of a material was made by an electron gun with a deviation of a beam on 180 degree. Diode type discharge device for ionization was placed above a surface of evaporated metal and was in a longitudinal adjustable magnetic field. Discharge was carried out in crossed electric and magnetic fields. Partial ionization of the vapor was made by primary and secondary electrons of the gun in a vapor cloud above evaporated substance. Physical properties and structure of the films. The comparative analysis of the films properties, besieged in conditions of influence of bombardment by ions of evaporated metal were studied depending on energy and the contents of ions in a stream of particles on a substrate

  9. Secondhand Exposure to Vapors From Electronic Cigarettes

    Science.gov (United States)

    Czogala, Jan; Fidelus, Bartlomiej; Zielinska-Danch, Wioleta; Travers, Mark J.; Sobczak, Andrzej

    2014-01-01

    Introduction: Electronic cigarettes (e-cigarettes) are designed to generate inhalable nicotine aerosol (vapor). When an e-cigarette user takes a puff, the nicotine solution is heated and the vapor is taken into lungs. Although no sidestream vapor is generated between puffs, some of the mainstream vapor is exhaled by e-cigarette user. The aim of this study was to evaluate the secondhand exposure to nicotine and other tobacco-related toxicants from e-cigarettes. Materials and Methods: We measured selected airborne markers of secondhand exposure: nicotine, aerosol particles (PM2.5), carbon monoxide, and volatile organic compounds (VOCs) in an exposure chamber. We generated e-cigarette vapor from 3 various brands of e-cigarette using a smoking machine and controlled exposure conditions. We also compared secondhand exposure with e-cigarette vapor and tobacco smoke generated by 5 dual users. Results: The study showed that e-cigarettes are a source of secondhand exposure to nicotine but not to combustion toxicants. The air concentrations of nicotine emitted by various brands of e-cigarettes ranged from 0.82 to 6.23 µg/m3. The average concentration of nicotine resulting from smoking tobacco cigarettes was 10 times higher than from e-cigarettes (31.60±6.91 vs. 3.32±2.49 µg/m3, respectively; p = .0081). Conclusions: Using an e-cigarette in indoor environments may involuntarily expose nonusers to nicotine but not to toxic tobacco-specific combustion products. More research is needed to evaluate health consequences of secondhand exposure to nicotine, especially among vulnerable populations, including children, pregnant women, and people with cardiovascular conditions. PMID:24336346

  10. Vapor characterization of Tank 241-C-103

    International Nuclear Information System (INIS)

    Huckaby, J.L.; Story, M.S.

    1994-06-01

    The Westinghouse Hanford Company Tank Vapor Issue Resolution Program has developed, in cooperation with Northwest Instrument Systems, Inc., Oak Ridge National Laboratory, Oregon Graduate Institute of Science and Technology, Pacific Northwest Laboratory, and Sandia National Laboratory, the equipment and expertise to characterize gases and vapors in the high-level radioactive waste storage tanks at the Hanford Site in south central Washington State. This capability has been demonstrated by the characterization of the tank 241-C-103 headspace. This tank headspace is the first, and for many reasons is expected to be the most problematic, that will be characterized (Osborne 1992). Results from the most recent and comprehensive sampling event, sample job 7B, are presented for the purpose of providing scientific bases for resolution of vapor issues associated with tank 241-C-103. This report is based on the work of Clauss et al. 1994, Jenkins et al. 1994, Ligotke et al. 1994, Mahon et al. 1994, and Rasmussen and Einfeld 1994. No attempt has been made in this report to evaluate the implications of the data presented, such as the potential impact of headspace gases and vapors to tank farm workers health. That and other issues will be addressed elsewhere. Key to the resolution of worker health issues is the quantitation of compounds of toxicological concern. The Toxicology Review Panel, a panel of Pacific Northwest Laboratory experts in various areas, of toxicology, has chosen 19 previously identified compounds as being of potential toxicological concern. During sample job 7B, the sampling and analytical methodology was validated for this preliminary list of compounds of toxicological concern. Validation was performed according to guidance provided by the Tank Vapor Conference Committee, a group of analytical chemists from academic institutions and national laboratories assembled and commissioned by the Tank Vapor Issue Resolution Program

  11. Vapor characterization of Tank 241-C-103

    Energy Technology Data Exchange (ETDEWEB)

    Huckaby, J.L. [Westinghouse Hanford Co., Richland, WA (United States); Story, M.S. [Northwest Instrument Systems, Inc. Richland, WA (United States)

    1994-06-01

    The Westinghouse Hanford Company Tank Vapor Issue Resolution Program has developed, in cooperation with Northwest Instrument Systems, Inc., Oak Ridge National Laboratory, Oregon Graduate Institute of Science and Technology, Pacific Northwest Laboratory, and Sandia National Laboratory, the equipment and expertise to characterize gases and vapors in the high-level radioactive waste storage tanks at the Hanford Site in south central Washington State. This capability has been demonstrated by the characterization of the tank 241-C-103 headspace. This tank headspace is the first, and for many reasons is expected to be the most problematic, that will be characterized (Osborne 1992). Results from the most recent and comprehensive sampling event, sample job 7B, are presented for the purpose of providing scientific bases for resolution of vapor issues associated with tank 241-C-103. This report is based on the work of Clauss et al. 1994, Jenkins et al. 1994, Ligotke et al. 1994, Mahon et al. 1994, and Rasmussen and Einfeld 1994. No attempt has been made in this report to evaluate the implications of the data presented, such as the potential impact of headspace gases and vapors to tank farm workers health. That and other issues will be addressed elsewhere. Key to the resolution of worker health issues is the quantitation of compounds of toxicological concern. The Toxicology Review Panel, a panel of Pacific Northwest Laboratory experts in various areas, of toxicology, has chosen 19 previously identified compounds as being of potential toxicological concern. During sample job 7B, the sampling and analytical methodology was validated for this preliminary list of compounds of toxicological concern. Validation was performed according to guidance provided by the Tank Vapor Conference Committee, a group of analytical chemists from academic institutions and national laboratories assembled and commissioned by the Tank Vapor Issue Resolution Program.

  12. Vacuum distillation/vapor filtration water recovery

    Science.gov (United States)

    Honegger, R. J.; Neveril, R. B.; Remus, G. A.

    1974-01-01

    The development and evaluation of a vacuum distillation/vapor filtration (VD/VF) water recovery system are considered. As a functional model, the system converts urine and condensates waste water from six men to potable water on a steady-state basis. The system is designed for 180-day operating durations and for function on the ground, on zero-g aircraft, and in orbit. Preparatory tasks are summarized for conducting low gravity tests of a vacuum distillation/vapor filtration system for recovering water from urine.

  13. Vapor deposition in basaltic stalactites, Kilauea, Hawaii

    Science.gov (United States)

    Baird, A. K.; Mohrig, D. C.; Welday, E. E.

    Basaltic stalacties suspended from the ceiling of a large lava tube at Kilauea, Hawaii, have totally enclosed vesicles whose walls are covered with euhedral FeTi oxide and silicate crystals. The walls of the vesicles and the exterior surfaces of stalactites are Fe and Ti enriched and Si depleted compared to common basalt. Minerals in vesicles have surface ornamentations on crystal faces which include alkali-enriched, aluminosilicate glass(?) hemispheres. No sulfide-, chloride-, fluoride-, phosphate- or carbonate-bearing minerals are present. Minerals in the stalactites must have formed by deposition from an iron oxide-rich vapor phase produced by the partial melting and vaporization of wall rocks in the tube.

  14. Flammability characteristics of combustible gases and vapors

    Energy Technology Data Exchange (ETDEWEB)

    Zabetakis, M. G. [Bureau of Mines, Pittsburgh, PA (United States)

    1964-05-01

    This is a summary of the available limit of flammability, autoignition and burning-rate data for more than 200 combustible gases and vapors in air and other oxidants, as well as of empirical rules and graphs that can be used to predict similar data for thousands of other combustibles under a variety of environmental conditions. Spec$c data are presented on the paraffinic, unsaturated, aromatic, and alicyclic hydrocarbons, alcohols, ethers, aldehydes, ketones, and sulfur compounds, and an assortment of fuels, fuel blends, hydraulic fluids, engine oils, and miscellaneous combustible gases and vapors.

  15. Laser vapor phase deposition of semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Karlov, N.V.; Luk' ianchuk, B.S.; Sisakian, E.V.; Shafeev, G.A.

    1987-06-01

    The pyrolytic effect of IR laser radiation is investigated with reference to the initiation and control of the vapor phase deposition of semiconductor films. By selecting the gas mixture composition and laser emission parameters, it is possible to control the deposition and crystal formation processes on the surface of semiconductors, with the main control action achieved due to the nonadiabatic kinetics of reactions in the gas phase and high temperatures in the laser heating zone. This control mechanism is demonstrated experimentally during the laser vapor deposition of germanium and silicon films from tetrachlorides on single-crystal Si and Ge substrates. 5 references.

  16. The vertical distribution of Mars water vapor

    Science.gov (United States)

    Davies, D. W.

    1979-01-01

    Analysis of observations made from the Viking 1 Orbiter indicates that the water vapor over the Viking 1 landing site is uniformly mixed with the atmosphere and not concentrated near the surface. The analysis incorporates the effects of atmospheric scattering and explains why previous earth-based observations showed a strong diurnal variation in water content. It also explains the lack of an early morning fog and removes the necessity of daily exchange of large amounts of water between the surface and the atmosphere. A water vapor volume mixing ratio of 1.5 x 10 to the -4th is inferred for the Viking 1 site in late summer.

  17. Drag Reduction by Leidenfrost Vapor Layers

    KAUST Repository

    Vakarelski, Ivan Uriev

    2011-05-23

    We demonstrate and quantify a highly effective drag reduction technique that exploits the Leidenfrost effect to create a continuous and robust lubricating vapor layer on the surface of a heated solid sphere moving in a liquid. Using high-speed video, we show that such vapor layers can reduce the hydrodynamic drag by over 85%. These results appear to approach the ultimate limit of drag reduction possible by different methods based on gas-layer lubrication and can stimulate the development of related energy saving technologies.

  18. Low temperature vapor phase digestion of graphite

    Energy Technology Data Exchange (ETDEWEB)

    Pierce, Robert A.

    2017-04-18

    A method for digestion and gasification of graphite for removal from an underlying surface is described. The method can be utilized to remove graphite remnants of a formation process from the formed metal piece in a cleaning process. The method can be particularly beneficial in cleaning castings formed with graphite molding materials. The method can utilize vaporous nitric acid (HNO.sub.3) or vaporous HNO.sub.3 with air/oxygen to digest the graphite at conditions that can avoid damage to the underlying surface.

  19. Macroscopic modeling for heat and water vapor transfer in dry snow by homogenization.

    Science.gov (United States)

    Calonne, Neige; Geindreau, Christian; Flin, Frédéric

    2014-11-26

    Dry snow metamorphism, involved in several topics related to cryospheric sciences, is mainly linked to heat and water vapor transfers through snow including sublimation and deposition at the ice-pore interface. In this paper, the macroscopic equivalent modeling of heat and water vapor transfers through a snow layer was derived from the physics at the pore scale using the homogenization of multiple scale expansions. The microscopic phenomena under consideration are heat conduction, vapor diffusion, sublimation, and deposition. The obtained macroscopic equivalent model is described by two coupled transient diffusion equations including a source term arising from phase change at the pore scale. By dimensional analysis, it was shown that the influence of such source terms on the overall transfers can generally not be neglected, except typically under small temperature gradients. The precision and the robustness of the proposed macroscopic modeling were illustrated through 2D numerical simulations. Finally, the effective vapor diffusion tensor arising in the macroscopic modeling was computed on 3D images of snow. The self-consistent formula offers a good estimate of the effective diffusion coefficient with respect to the snow density, within an average relative error of 10%. Our results confirm recent work that the effective vapor diffusion is not enhanced in snow.

  20. A new method for the determination of vaporization enthalpies of ionic liquids at low temperatures.

    Science.gov (United States)

    Verevkin, Sergey P; Zaitsau, Dzmitry H; Emelyanenko, Vladimir N; Heintz, Andreas

    2011-11-10

    A new method for the determination of vaporization enthalpies of extremely low volatile ILs has been developed using a newly constructed quartz crystal microbalance (QCM) vacuum setup. Because of the very high sensitivity of the QCM it has been possible to reduce the average temperature of the vaporization studies by approximately 100 K in comparison to other conventional techniques. The physical basis of the evaluation procedure has been developed and test measurements have been performed with the common ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide [C(2)mim][NTf(2)] extending the range of measuring vaporization enthalpies down to 363 K. The results obtained for [C(2)mim][NTf(2)] have been tested for thermodynamic consistency by comparison with data already available at higher temperatures. Comparison of the temperature-dependent vaporization enthalpy data taken from the literature show only acceptable agreement with the heat capacity difference of -40 J K(-1) mol(-1). The method developed in this work opens also a new way to obtain reliable values of vaporization enthalpies of thermally unstable ionic liquids.

  1. Laser pulse propagation in a meter scale rubidium vapor/plasma cell in AWAKE experiment

    Energy Technology Data Exchange (ETDEWEB)

    Joulaei, A. [Max-Planck Institute for Physics, Munich (Germany); University of Mazandaran (Iran, Islamic Republic of); Moody, J. [Max-Planck Institute for Physics, Munich (Germany); Berti, N.; Kasparian, J. [University of Geneva (Switzerland); Mirzanejhad, S. [University of Mazandaran (Iran, Islamic Republic of); Muggli, P. [Max-Planck Institute for Physics, Munich (Germany)

    2016-09-01

    We present the results of numerical studies of laser pulse propagating in a 3.5 cm Rb vapor cell in the linear dispersion regime by using a 1D model and a 2D code that has been modified for our special case. The 2D simulation finally aimed at finding laser beam parameters suitable to make the Rb vapor fully ionized to obtain a uniform, 10 m-long, at least 1 mm in radius plasma in the next step for the AWAKE experiment. - Highlights: • Discussion the AWAKE plasma source based on photoionization of rubidium vapor with a TW/cm^2 Intensity laser with a spectrum across valence ground state transition resonances. • Examines the propagation of the AWAKE ionization laser through rubidium vapor at design density on a small scale and reduced intensity with a linear numerical model compared to experimental results. • Discusses physics of pulse propagation through the vapor at high intensity regime where strong ionization occurs within the laser pulse.

  2. The use of laser diodes for control of uranium vaporization rates

    International Nuclear Information System (INIS)

    Hagans, K.; Galkowski, J.

    1993-09-01

    Within the Atomic Vapor Laser Isotope Separation (AVLIS) program we have successfully used the laser absorption spectroscopy technique (LAS) to diagnose process physics performance and control vaporization rate. In the LAS technique, a narrow line-width laser is tuned to an absorption line of the species to be measured. The laser light that is propagated through the sample is and, from this data, the density of the species can be calculated. These laser systems have exclusively consisted of expensive, cumbersome, and difficult to maintain argon-ion-pumped ring dye lasers. While the wavelength flexibility of dye lasers is very useful in a laboratory environment, these laser systems are not well suited for the industrial process control system under development for an AVLIS plant. Diode-lasers offer lower system costs, reduced man power requirements, reduced space requirements, higher system availability, and improved operator safety. We report the. successful deployment and test of a prototype laser diode based uranium vapor rate control system. Diode-laser generated LAS data was used to control the uranium vaporization rate in a hands-off mode for greater than 50 hours. With one minor adjustment the system successfully controlled the vaporization rate for greater than 147 hours. We report excellent agreement with ring dye laser diagnostics and uranium weigh-back measurements

  3. Separation of aromatics by vapor permeation through solvent swollen membrane

    Energy Technology Data Exchange (ETDEWEB)

    Ito, A.; Adachi, K.; Feng, Y. [Niigata University, Niigata (Japan)

    1995-12-20

    A vapor permeation process for aromatics separation from a hydrocarbon mixture was studied by means of the simultaneous permeation of dimethylsulfoxide vapor as an agent for membrane swelling and preferential permeation of aromatics. The separation performance of the process was demonstrated by a polyvinylalcohol membrane for mixed vapors of benzene/cyclohexane, xylene/octane and a model gasoline. The aromatic vapors preferentially permeated from these mixed vapor feeds. The separation factor was over 10. The separation mechanism of the process mainly depends on the relative salability of the vapors between aromatics and other hydrocarbons in dimethylsulfoxide. 14 refs., 9 figs., 1 tab.

  4. A Local Propagation for Vapor Explosions

    International Nuclear Information System (INIS)

    Ochiai, M.; Bankoff, S.G.

    1976-01-01

    Explosive boiling, defined as energy transfer leading to formation of vapor rapidly enough to produce large shock waves, has been widely studied in a number of contexts. Depending upon the nature and temperatures of the liquids and mode of contacting, large-scale mixing and explosive vaporization may occur, or alternatively, only relatively non-energetic, film-type boiling may exist. The key difference is whether a mechanism is operative for increasing the liquid-liquid interfacial area in a time scale consistent with the formation of a detonation wave. Small drops of a cold volatile liquid were dropped onto a free surface of a hot, non-volatile liquid. The critical Weber number for coalescence is obtained from the envelope of the film boiling region. Markedly different behavior for the two hot liquids is observed. A 'splash' theory for local propagation of vapor explosions in spontaneously nucleating liquid-liquid systems is now formulated. After a random contact is made, explosive growth and coalescence of the vapor bubbles occurs as soon as the surrounding pressure is relieved, resulting in a high-pressure vapor layer at the liquid-liquid contact area. This amounts to an impact pressure applied to the free surface, with a resulting velocity distribution obtained from potential flow theory. The peak pressure predictions are. consistent with data for Freon-oil mixing, but further evaluation will await additional experimental data. Nevertheless, the current inference is that a UO 2 -Na vapor explosion in a reactor environment cannot be visualized. In conclusion: The propagation model presented here differs in some details from that of Henry and Fauske, although both are consistent with some peak pressure data obtained by Henry, et al. Clearly, additional experimental information is needed for further evaluation of these theories. Nevertheless, it should be emphasized that even at this time a number of important observations concerning the requirements for a vapor

  5. Knudsen cell vaporization of rare earth nitrides: enthalpy of vaporization of HoN098

    International Nuclear Information System (INIS)

    Brown, R.C.; Clark, N.J.

    1975-01-01

    The enthalpy of vaporization of HoN 0 . 98 was measured by the weight-loss Knudsen cell technique using Motzfeldt-Whitman extrapolations to zero orifice area. A third-law enthalpy of vaporization of HoN 0 . 98 of 155.9 +- 5 kcal mole -1 was obtained compared to a second-law value of 162.0 +- 5 kcal mole -1 . Similar measurements on the nitrides of samarium, erbium, and ytterbium gave third-law enthalpies of vaporization of 126.8 +-- 5 kcal mole -1 ; 159.6 +- 5 kcal mole -1 , and 121.0 +- 5 kcal mole -1 , respectively. 7 tables

  6. Collapsing criteria for vapor film around solid spheres as a fundamental stage leading to vapor explosion

    International Nuclear Information System (INIS)

    Freud, Roy; Harari, Ronen; Sher, Eran

    2009-01-01

    Following a partial fuel-melting accident, a Fuel-Coolant Interaction (FCI) can result with the fragmentation of the melt into tiny droplets. A vapor film is then formed between the melt fragments and the coolant, while preventing a contact between them. Triggering, propagation and expansion typically follow the premixing stage. In the triggering stage, vapor film collapse around one or several of the fragments occurs. This collapse can be the result of fragments cooling, a sort of mechanical force, or by any other means. When the vapor film collapses and the coolant re-establishes contact with the dry surface of the hot melt, it may lead to a very rapid and rather violent boiling. In the propagation stage the shock wave front leads to stripping of the films surrounding adjacent droplets which enhance the fragmentation and the process escalates. During this process a large quantity of liquid vaporizes and its expansion can result in destructive mechanical damage to the surrounding structures. This multiphase thermal detonation in which high pressure shock wave is formed is regarded as 'vapor explosion'. The film boiling and its possible collapse is a fundamental stage leading to vapor explosion. If the interaction of the melt and the coolant does not result in a film boiling, no explosion occurs. Many studies have been devoted to determine the minimum temperature and heat flux that is required to maintain a film boiling. The present experimental study examines the minimum temperature that is required to maintain a film boiling around metal spheres immersed into a liquid (subcooled distilled water) reservoir. In order to simulate fuel fragments that are small in dimension and has mirror-like surface, small spheres coated with anti-oxidation layer were used. The heat flux from the spheres was calculated from the sphere's temperature profiles and the sphere's properties. The vapor film collapse was associated with a sharp rise of the heat flux during the cooling

  7. Raman lidar water vapor profiling over Warsaw, Poland

    Science.gov (United States)

    Stachlewska, Iwona S.; Costa-Surós, Montserrat; Althausen, Dietrich

    2017-09-01

    Water vapor mixing ratio and relative humidity profiles were derived from the multi-wavelength Raman PollyXT lidar at the EARLINET site in Warsaw, using the Rayleigh molecular extinction calculation based on atmospheric temperature and pressure from three different sources: i) the standard atmosphere US 62, ii) the Global Data Assimilation System (GDAS) model output, and iii) the WMO 12374 radiosoundings launched at Legionowo. With each method, 136 midnight relative humidity profiles were obtained for lidar observations from July 2013 to August 2015. Comparisons of these profiles showed in favor of the latter method (iii), but it also indicated that the other two data sources could replace it, if necessary. Such use was demonstrated for an automated retrieval of water vapor mixing ratio from dusk until dawn on 19/20 March 2015; a case study related to an advection of biomass burning aerosol from forest fires over Ukraine. Additionally, an algorithm that applies thresholds to the radiosounding relative humidity profiles to estimate macro-physical cloud vertical structure was used for the first time on the Raman lidar relative humidity profiles. The results, based on a subset of 66 profiles, indicate that below 6 km cloud bases/tops can be successfully obtained in 53% and 76% cases from lidar and radiosounding profiles, respectively. Finally, a contribution of the lidar derived mean relative humidity to cloudy conditions within the range of 0.8 to 6.2 km, in comparison to clear-sky conditions, was estimated.

  8. Modelling and numerical simulation of liquid-vapor phase transitions

    International Nuclear Information System (INIS)

    Caro, F.

    2004-11-01

    This work deals with the modelling and numerical simulation of liquid-vapor phase transition phenomena. The study is divided into two part: first we investigate phase transition phenomena with a Van Der Waals equation of state (non monotonic equation of state), then we adopt an alternative approach with two equations of state. In the first part, we study the classical viscous criteria for selecting weak solutions of the system used when the equation of state is non monotonic. Those criteria do not select physical solutions and therefore we focus a more recent criterion: the visco-capillary criterion. We use this criterion to exactly solve the Riemann problem (which imposes solving an algebraic scalar non linear equation). Unfortunately, this step is quite costly in term of CPU which prevent from using this method as a ground for building Godunov solvers. That is why we propose an alternative approach two equations of state. Using the least action principle, we propose a phase changing two-phase flow model which is based on the second thermodynamic principle. We shall then describe two equilibrium submodels issued from the relaxations processes when instantaneous equilibrium is assumed. Despite the weak hyperbolicity of the last sub-model, we propose stable numerical schemes based on a two-step strategy involving a convective step followed by a relaxation step. We show the ability of the system to simulate vapor bubbles nucleation. (author)

  9. TEXTILE SURFACE MODIFICATION BY PYHSICAL VAPOR DEPOSITION – (REVIEW

    Directory of Open Access Journals (Sweden)

    YUCE Ismail

    2017-05-01

    Full Text Available Textile products are used in various branches of the industry from automotive to space products. Textiles produced for industrial use are generally referred to as technical textiles. Technical textiles are nowadays applied to several areas including transportation, medicine, agriculture, protection, sports, packaging, civil engineering and industry. There are rapid developments in the types of materials used in technical textiles. Therefore, modification and functionalization of textile surfaces is becoming more crucial. The improvements of the properties such as anti-bacterial properties, fire resistivity, UV radiation resistance, electrical conductivity, self cleaning, and super hydrophobic, is getting more concern with respect to developments in textile engineering. The properties of textile surfaces are closely related to the fiber structure, the differences in the polymer composition, the fiber mixture ratio, and the physical and chemical processes applied. Textile surface modifications can be examined in four groups under the name mechanical, chemical, burning and plasma. Surface modifications are made to improve the functionality of textile products. Textile surface modifications affect the properties of the products such as softness, adhesion and wettability. The purpose of this work is to reveal varieties of vapor deposition modifications to improve functionality. For this purpose, the pyhsical vapor deposition methods, their affects on textile products and their end-uses will be reviewed.

  10. Chemical vapor deposition of refractory metals and ceramics III

    International Nuclear Information System (INIS)

    Gallois, B.M.; Lee, W.Y.; Pickering, M.A.

    1995-01-01

    The papers contained in this volume were originally presented at Symposium K on Chemical Vapor Deposition of Refractory Metals and Ceramics III, held at the Fall Meeting of the Materials Research Society in Boston, Massachusetts, on November 28--30, 1994. This symposium was sponsored by Morton International Inc., Advanced Materials, and by The Department of Energy-Oak Ridge National Laboratory. The purpose of this symposium was to exchange scientific information on the chemical vapor deposition (CVD) of metallic and ceramic materials. CVD technology is receiving much interest in the scientific community, in particular, to synthesize new materials with tailored chemical composition and physical properties that offer multiple functionality. Multiphase or multilayered films, functionally graded materials (FGMs), ''smart'' material structures and nanocomposites are some examples of new classes of materials being produced via CVD. As rapid progress is being made in many interdisciplinary research areas, this symposium is intended to provide a forum for reporting new scientific results and addressing technological issues relevant to CVD materials and processes. Thirty four papers have been processed separately for inclusion on the data base

  11. A three-dimensional numerical study on dynamics behavior of a rising vapor bubble in uniformly superheated liquid by lattice Boltzmann method

    International Nuclear Information System (INIS)

    Sun, Tao; Sun, Jiangang; Ang, Xueye; Li, Shanshan; Su, Xin

    2016-01-01

    Highlights: • Dynamics of vapor bubble in uniformly superheated liquid is studied by a 3D LBM. • The growth rate reaches a maximum value and then decrease until a certain value. • The vapor bubble will take place a larger deformation at high ratio of Re/Eo. • The bubble wake has a great influence on motion and deformation of vapor bubble. • Ratio of Re/Eo has an important influence on evolution of temperature field. - Abstract: In this paper, dynamics behaviors of a rising vapor bubble in uniformly superheated liquid are firstly studied by a hybrid three-dimensional lattice Boltzmann model. In order to validate this model, two test cases regarding bubble rising in an isothermal system and vapor bubble growth in a superheated liquid are performed, respectively. The test results are consistent with existing results and indicate the feasibility of the hybrid model. The hybrid model is further applied to simulate growth and deformation of a rising vapor bubble in different physical conditions. Some physical parameters of vapor bubble such as equivalent diameter and growth rate are evaluated accurately by three-dimensional simulations. It is found that the growth rate of vapor bubble changes with time and temperature gradient. It reaches a maximum value at the initial stage and then decrease until a certain value. The growth and deformation of vapor bubble at different ratios of Re/Eo are discussed. The numerical results show the vapor bubble will take place a larger deformation at high ratio of Re/Eo at the middle and final stages. In addition, the hybrid model is also applied to predict the evolution of flow and temperature fields. The bubble wake has a great influence on the motion and deformation of vapor bubble during rising process. As far as the temperature field is concerned, a ratio of Re/Eo has an important influence on heat transfer and evolution of temperature field.

  12. Solvent-vapor-assisted imprint lithography

    NARCIS (Netherlands)

    Voicu, Nicoleta E.; Ludwigs, Sabine; Crossland, Edward J. W.; Andrew, Piers; Steiner, Ullrich

    2007-01-01

    Sub-micrometer features are replicated into high-molecular-weight polymer resists by using solvent-assisted nanoimprint lithography (see figure). By swelling the polymer in a controlled solvent-vapor atmosphere, millibar pressures and ambient temperatures are sufficient to achieve high-fidelity

  13. General well function for soil vapor extraction

    Science.gov (United States)

    Perina, Tomas

    2014-04-01

    This paper develops a well function applicable to extraction of groundwater or soil vapor from a well under the most common field test conditions. The general well function (Perina and Lee, 2006) [12] is adapted to soil vapor extraction and constant head boundary at the top. For groundwater flow, the general well function now applies to an extraction well of finite diameter with uniform drawdown along the screen, finite-thickness skin, and partially penetrating an unconfined, confined, and leaky aquifer, or an aquifer underneath a reservoir. With a change of arguments, the model applies to soil vapor extraction from a vadose zone with no cover or with leaky cover at the ground surface. The extraction well can operate in specified drawdown (pressure for soil vapor) or specified flowrate mode. Frictional well loss is computed as flow-only dependent component of the drawdown inside the extraction well. In general case, the calculated flow distribution is not proportional to screen length for a multiscreen well.

  14. Atomic lithium vapor laser isotope separation

    CERN Document Server

    Olivares, I E

    2002-01-01

    An atomic vapor laser isotope separation in lithium was performed using tunable diode lasers. The method permits also the separation of the isotopes between the sup 6 LiD sub 2 and the sup 7 LiD sub 1 lines using a self-made mass separator which includes a magnetic sector and an ion beam designed for lithium. (Author)

  15. Atomic lithium vapor laser isotope separation

    International Nuclear Information System (INIS)

    Olivares, I.E.; Rojas, C.

    2002-01-01

    An atomic vapor laser isotope separation in lithium was performed using tunable diode lasers. The method permits also the separation of the isotopes between the 6 LiD 2 and the 7 LiD 1 lines using a self-made mass separator which includes a magnetic sector and an ion beam designed for lithium. (Author)

  16. Resonant second harmonic generation in potassium vapor

    International Nuclear Information System (INIS)

    Kim, D.; Mullin, C.S.; Shen, Y.R.; Lawrence Berkeley Lab., CA

    1995-06-01

    Picosecond pulses are used to study resonant second harmonic generation in potassium vapor. Although the process is both microscopically and macroscopically forbidden, it can readily be observed. The results can be quantitatively understood by a multiphoton-ionization-initiated, dc-field-induced, coherent transient model

  17. Vapor Bubbles in Flow and Acoustic Fields

    NARCIS (Netherlands)

    Prosperetti, Andrea; Hao, Yue; Sadhal, S.S

    2002-01-01

    A review of several aspects of the interaction of bubbles with acoustic and flow fields is presented. The focus of the paper is on bubbles in hot liquids, in which the bubble contains mostly vapor, with little or no permanent gas. The topics covered include the effect of translation on condensation

  18. A FGGE water vapor wind data set

    Science.gov (United States)

    Stewart, Tod R.; Hayden, Christopher M.

    1985-01-01

    It has been recognized for some time that water vapor structure visible in infrared imagery offers a potential for obtaining motion vectors when several images are considered in sequence (Fischer et al., 1981). A study evaluating water vapor winds obtained from the VISSR atmospheric sounder (Stewart et al., 1985) has confirmed the viability of the approach. More recently, 20 data sets have been produced from METEOSAT water vapor imagery for the FGGE period of 10-25 November 1979. Where possible, two data sets were prepared for each day at 0000 and 1200 GMT and compared with rawinsondes over Europe, Africa, and aircraft observations over the oceans. Procedures for obtaining winds were, in general, similar to the earlier study. Motions were detected both by a single pixel tracking and a cross correlation method by using three images individually separated by one hour. A height assignment was determined by matching the measured brightness temperature to the temperature structure represented by the FGGE-IIIB analyses. Results show that the METEOSAT water vapor winds provide uniform horizontal coverage of mid-level flow over the globe with good accuracy.

  19. External fuel vaporization study, phase 2

    Science.gov (United States)

    Szetela, E. J.; Chiappetta, L.

    1981-01-01

    An analytical study was conducted to evaluate the effect of variations in fuel properties on the design of an external fuel vaporizaton system. The fuel properties that were considered included thermal stability, critical temperature, enthalpy a critical conditions, volatility, and viscosity. The design parameters that were evaluated included vaporizer weight and the impact on engine requirement such as maintenance, transient response, performance, and altitude relight. The baseline fuel properties were those of Jet A. The variation in thermal stability was taken as the thermal stability variation for Experimental Referee Broad Specification (ERBS) fuel. The results of the analysis indicate that a change in thermal stability equivalent to that of ERBS would increase the vaporization system weight by 20 percent, decrease oprating time between cleaning by 40 percent and make altitude relight more difficult. An increase in fuel critical temperature of 39 K would require a 40 percent increase in vaporization system weight. The assumed increase in enthalpy and volatility would also increase vaporizer weight by 40 percent and make altitude relight extremely difficult. The variation in fuel viscosity would have a negligible effect on the design parameters.

  20. Fractional condensation of biomass pyrolysis vapors

    NARCIS (Netherlands)

    Westerhof, Roel Johannes Maria; Brilman, Derk Willem Frederik; Garcia Perez, M.; Wang, Zhouhong; Oudenhoven, Stijn; van Swaaij, Willibrordus Petrus Maria; Kersten, Sascha R.A.

    2011-01-01

    In this paper, we have investigated the possibilities to steer the composition and, thus, the quality of pyrolysis liquids by the reactor temperature and the pyrolysis vapor condenser temperature. Pine wood was pyrolyzed in a 1 kg/h fluidized-bed pyrolysis reactor operated at 330 or 480 °C. The