WorldWideScience

Sample records for plasma ion implantation

  1. Dimension effects in plasma immersion ion implantation of cylindrical bore

    CERN Document Server

    Tian Xiu Bo; Tong Hong Hui; Chu, P K

    2002-01-01

    Plasma immersion ion implantation is a new technique pertaining to ion implantation. Different from the case of exterior surface treatment, plasma immersion ion implantation of interior surface possesses dimension effects. Consequently it is a challenge to implant the inner wall of a cylindrical bore due to this finite dimension.The ion energy cannot be linearly changed with applied voltage and there exists a saturation value due to overlap effect of plasma sheath. The plasma in the bore may rapidly be depleted, which is attributed to finite plasma volume and plasma-sheath con-flowing effect. For instance the plasma depletion time is about 0.55 mu s when a bore with a diameter of 20 cm is treated under conditions of applied voltage of 30 kV and plasma density of 2 x 10 sup 1 sup 5 ions/cm sup 3. Interior plasma-source hardware may be an effective solution

  2. Plasma immersion ion implantation for reducing metal ion release

    Energy Technology Data Exchange (ETDEWEB)

    Diaz, C.; Garcia, J. A.; Maendl, S.; Pereiro, R.; Fernandez, B.; Rodriguez, R. J. [Centro de Ingenieria Avanzada de Superficies AIN, 31191, Cordovilla-Pamplona (Spain); Leibniz-Institut fuer Oberflaechenmodifizierung, 04318 Leipzig (Germany); Universidad de Oviedo, Departamento Quimica Fisica y Analitica (Spain); Centro de Ingenieria Avanzada de Superficies AIN, 31191, Cordovilla-Pamplona (Spain)

    2012-11-06

    Plasma immersion ion implantation of Nitrogen and Oxygen on CoCrMo alloys was carried out to improve the tribological and corrosion behaviors of these biomedical alloys. In order to optimize the implantation results we were carried experiments at different temperatures. Tribocorrosion tests in bovine serum were used to measure Co, Cr and Mo releasing by using Inductively Coupled Plasma Mass Spectrometry analysis after tests. Also, X-ray Diffraction analysis were employed in order to explain any obtained difference in wear rate and corrosion tests. Wear tests reveals important decreases in rate of more than one order of magnitude for the best treatment. Moreover decreases in metal release were found for all the implanted samples, preserving the same corrosion resistance of the unimplanted samples. Finally this paper gathers an analysis, in terms of implantation parameters and achieved properties for industrial implementation of these treatments.

  3. Semiconductor applications of plasma immersion ion implantation technology

    Indian Academy of Sciences (India)

    Mukesh Kumar; Rajkumar; Dinesh Kumar; P J George

    2002-11-01

    Many semiconductor integrated circuit manufacturing processes require high dose of implantation at very low energies. Conventional beam line ion implantation system suffers from low beam current at low energies, therefore, cannot be used economically for high dose applications. Plasma immersion ion implantation (PIII) is emerging as a potential technique for such implantations. This method offers high dose rate irrespective of implantation energy. In the present study nitrogen ions were implanted using PIII in order to modify the properties of silicon and some refractory metal films. Oxidation behaviour of silicon was observed for different implantation doses. Diffusion barrier properties of refractory barrier metals were studied for copper metallization.

  4. Influence of plasma density and plasma sheath dynamics on the ion implantation by plasma immersion technique

    OpenAIRE

    Ensinger, Wolfgang

    1996-01-01

    Influence of plasma density and plasma sheath dynamics on the ion implantation by plasma immersion technique / B. Rauschenbach ... - In: Nuclear instruments and methods in physics research. B. 113. 1996. S. 266-269

  5. The distribution and depth of ion doses implanted into wedges by plasma immersion ion implantation in drifting and stationary plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Tarrant, R N; Devasahayam, S; McKenzie, D R; Bilek, M M M [School of Physics (A28), University of Sydney, NSW 2006 (Australia)

    2006-08-15

    The distribution of ion dose arising from plasma immersion ion implantation (PIII) of a complex shape in the form of a wedge is measured. Two types of plasma are considered: a drifting titanium plasma derived from a pulsed cathodic arc and a stationary plasma generated by PIII pulses in oxygen or nitrogen gas. The distributions of the implanted material over the surface of the aluminium wedge were studied using secondary ion mass spectroscopy and Rutherford backscattering. The effects of varying the apex angles of the wedge and the plasma density are investigated. We conclude that ion-focusing effects at the apex of the wedge were more important for the drifting plasma than for the stationary plasmas. In a drifting plasma, the ion drift velocity directed towards the apex of the wedge compresses the sheath close to the apex and enhances the concentration of the dose. For the stationary plasma, the dose is more uniform.

  6. Ge laser-generated plasma for ion implantation

    Science.gov (United States)

    Giuffrida, L.; Torrisi, L.; Czarnecka, A.; Wołowski, J.; Quarta, Ge; Calcagnile, L.; Lorusso, A.; Nassisi, V.

    Laser-generated plasma obtained by Ge ablation in vacuum was investigated with the aim to implant energetic Ge ions in light substrates (C, Si, SiO2). Different intensities of laser sources were employed for these experiments: Nd:Yag of Catania-LNS; Nd:Yag of Warsaw-IPPL; excimer laser of Lecce-INFN; iodine laser of Prague-PALS. Different experimental setups were used to generate multiple ion stream emissions, multiple ion energetic distributions, high implantation doses, thin film deposition and post-acceleration effects. `On line' measurements of ion energy were obtained with ion collectors and ion energy analyzer in time-of-flight configuration. `Off line' measurement of Ge implants were obtained with 2.25 MeV helium beam in Rutherford backscattering spectrometry. Results indicated that ion implants show typical deep profiles only for substrates placed along the normal to the target surface at which the ion energy is maximum.

  7. Hardening of Metallic Materials Using Plasma Immersion Ion Implantation (PIII)

    Science.gov (United States)

    Xu, Yufan; Clark, Mike; Flanagan, Ken; Milhone, Jason; Nonn, Paul; Forest, Cary

    2016-10-01

    A new approach of Plasma Immersion Ion Implantation (PIII) has been developed with the Plasma Couette Experiment Upgrade (PCX-U). The new approach efficiently reduces the duty cycle under the same average power for PIII. The experiment uses a Nitrogen plasma at a relatively high density of 1010 1011 cm-3 with ion temperatures of working cycle. The samples (Alloy Steel 9310) are analyzed by a Vicker Hardness Tester to study the hardness and X-ray Photoelectron Spectroscopy (XPS) to study implantation density and depth. Different magnetic fields are also applied on samples to reduce the energy loss and secondary emission. Higher efficiency of implantation is expected from this experiment and the results will be presented. Hilldale Undergraduate/Faculty Research Fellowship of University of Wisconsin-Madison; Professor Cary Forest's Kellett Mid-Career Faculty Award.

  8. Surface modification of polymeric materials by plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Ricky K.Y. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Cheung, I.T.L. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Mei, Y.F. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Shek, C.H. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Siu, G.G. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: paul.chu@cityu.edu.hk; Yang, W.M. [School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031 (China); Leng, Y.X. [School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031 (China); Huang, Y.X. [State Key Laboratory of Welding Production Technology, Harbin Institute of Technology, Harbin (China); Tian, X.B. [State Key Laboratory of Welding Production Technology, Harbin Institute of technology, Harbin (China); Yang, S.Q. [State Key Laboratory of Welding Production Technology, Harbin Institute of Technology, Harbin (China)

    2005-08-01

    Polymer surfaces typically have low surface tension and high chemical inertness and so they usually have poor wetting and adhesion properties. The surface properties can be altered by modifying the molecular structure using plasma immersion ion implantation (PIII). In this work, Nylon-6 was treated using oxygen/nitrogen PIII. The observed improvement in the wettability is due to the oxygenated and nitrogen (amine) functional groups created on the polymer surface by the plasma treatment. X-ray photoelectron spectroscopy (XPS) results show that nitrogen and oxygen plasma implantation result in C-C bond breaking to form the imine and amine groups as well as alcohol and/or carbonyl groups on the surface. The water contact angle results reveal that the surface wetting properties depend on the functional groups, which can be adjusted by the ratio of oxygen-nitrogen mixtures.

  9. Industrial plasma immersion ion implanter and its applications

    CERN Document Server

    Tong Hong Hui; Huo Yan Feng; Wang Ke; Mu Li Lan; Feng Tie Min; Zhao Jun; Yan Bing; Geng Man

    2002-01-01

    A new generation industrial plasma immersion ion implanter was developed recently in South-western Institute of Physics and some experimental results are reported. The vacuum chamber with 900 mm in diameter and 1050 mm in height stands vertically. The pumping system includes turbo -pump and mechanical pump and it can be automatically controlled by PLC. The background pressure is less than 4 x 10 sup - sup 4 Pa. The plasma in the chamber can be generated by hot-filament discharge and three high-efficiency magnetic filter metal plasma sources, so that the plasma immersion ion implantation and enhanced deposition can be done. The maximum pulse voltage output is 80 kV, maximum pulse current is 60 A, repetition frequency is 50-500 Hz, and the pulse rise time is less than 2 mu s. The power modulator can operate in the pulse bunching mode if necessary. In general, the plasma density is 10 sup 8 -10 sup 1 sup 0 cm sup - sup 3 , the film deposition rate is 0.1-0.5 nm/s

  10. Sheath overlap during very large scale plasma source ion implantation

    Science.gov (United States)

    Cluggish, B. P.; Munson, C. P.

    1998-12-01

    Measurements of plasma source ion implantation have been performed on a large target of complex geometry. The target consists of 1000 aluminum, automotive piston surrogates mounted on four racks; total surface area is over 16 m2. The four racks are positioned parallel to each other, 0.25 m apart, in an 8 m3 vacuum chamber. The racks of pistons are immersed in a capacitive radio frequency plasma, with an argon gas pressure of 20-65 mPa. Langmuir probe measurements indicate that the plasma density profile is highly nonuniform, due to particle losses to the racks of pistons. The plasma ions are implanted into the pistons by pulse biasing the workpiece to negative voltages as low as -18 kV for up to 20 μs. During the voltage pulse, the high-voltage sheaths from adjacent racks of pistons converge towards each other. At plasma densities less than 109 cm-3 the sheaths are observed to overlap. Measurements of the sheath overlap time are compared with standard analytic theory and with simulations run with a two-dimensional particle-in-cell code.

  11. Simulation methods of ion sheath dynamics in plasma source ion implantation

    Institute of Scientific and Technical Information of China (English)

    WANG Jiuli; ZHANG Guling; WANG Younian; LIU Yuanfu; LIU Chizi; YANG Size

    2004-01-01

    Progress of the theoretical studies on the ion sheath dynamics in plasma source ion implantation (PSII) is reviewed in this paper. Several models for simulating the ion sheath dynamics in PSII are provided. The main problem of nonuniform ion implantation on the target in PSII is discussed by analyzing some calculated results. In addition, based on the relative researches in our laboratory, some calculated results of the ion sheath dynamics in PSII for inner surface modification of a cylindrical bore are presented. Finally, new ideas and tendency for future researches on ion sheath dynamics in PSII are proposed.

  12. Droplet-free high-density metal ion source for plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Keiji [Department of Electrical Engineering, College of Engineering, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487-8501 (Japan)]. E-mail: nakamura@solan.chubu.ac.jp; Yoshinaga, Hiroaki [Department of Electrical Engineering, Doshisha University, 1-3 Tatara Miyakodani, Kyotanabe, Kyoto 610-0321 (Japan); Yukimura, Ken [Department of Electrical Engineering, Doshisha University, 1-3 Tatara Miyakodani, Kyotanabe, Kyoto 610-0321 (Japan)

    2006-01-15

    This paper reports on plasma parameters and ion composition of droplet-free Zr ion source for plasma immersion ion implantation and deposition (PIII and D). Zirconium (Zr) ions were obtained by ionizing sputtered Zr atoms in inductively-coupled argon discharge. The characteristics of plasma density, plasma potential and electron temperature were typical ones of such a inductive discharge, and the plasma parameters were not significantly influenced by mixing the sputtered Zr atoms into the plasma. Actually, the main ionic component was still Ar{sup +} ions, and the ion density ratio of [Zr{sup +}]/[Ar{sup +}] was as low as {approx}8%. Increase in sputtering rate of the Zr source will be necessary to improve the ion density ratio.

  13. Argon plasma immersion ion implantation of polystyrene films

    Energy Technology Data Exchange (ETDEWEB)

    Kondyurin, A. [Applied and Plasma Physics, School of Physics (A28), University of Sydney, New South Wales 2006 (Australia)], E-mail: kond@mailcity.com; Gan, B.K.; Bilek, M.M.M.; McKenzie, D.R.; Mizuno, K. [Applied and Plasma Physics, School of Physics (A28), University of Sydney, New South Wales 2006 (Australia); Wuhrer, R. [Microstructural Analysis Unit, University of Technology Sydney, P.O. Box 123, Broadway, NSW 2007 (Australia)

    2008-04-15

    Plasma immersion ion implantation (PIII), using bias voltages of 5, 10, 15 and 20 kV in an argon plasma and fluences in the range of 2 x 10{sup 14}-2 x 10{sup 16} ions/cm{sup 2}, was applied to 100 nm polystyrene films coated on silicon wafer substrates. The etching kinetics and structural changes induced in the polystyrene films were investigated with ellipsometry, Raman and FTIR spectroscopies, optical and scanning electron microscopies, atomic force microscopy and contact angle measurements. Effects such as carbonisation, oxidation and cross-linking were observed and their dependence on the applied bias voltage is reported. Variations in the etching rate during the PIII process and its relationship to carbonisation of the modified surface layer are explored.

  14. Influence of ion species ratio on grid-enhanced plasma source ion implantation

    Institute of Scientific and Technical Information of China (English)

    Wang Jiu-Li; Zhang Gu-Ling; Liu Yuan-Fu; Wang You-Nian; Liu Chi-Zi; Yang Si-Ze

    2004-01-01

    @@ Grid-enhanced plasma source ion implantation (GEPSII) is a newly proposed technique to modify the inner-surface properties of a cylindrical bore. In this paper, a two-ion fluid model describing nitrogen molecular ions N2+ and atomic ions N+ is used to investigate the ion sheath dynamics between the grid electrode and the inner surface of a cylindrical bore during the GEPSII process, which is an extension of our previous calculations in which only N2+ was considered.Calculations are concentrated on the results of ion dose and impact energy on the target for different ion species ratios in the core plasma. The calculated results show that more atomic ions N+ in the core plasma can raise the ion impact energy and reduce the ion dose on the target.

  15. Modification of plasma polymer films by ion implantation

    Directory of Open Access Journals (Sweden)

    Santos Deborah Cristina Ribeiro dos

    2004-01-01

    Full Text Available In this work, thin polymer films were prepared from acetylene and argon radiofrequency (13.56 MHz, 80 W glow discharges. Post-deposition treatment was performed by plasma immersion ion implantation in nitrogen or helium glow discharges (13.56 MHz, 70 W. In these cases, samples were biased with 25 kV negative pulses. Exposure time to the bombardment plasma, t, ranged from 900 to 7200 s. Chemical composition of the film surfaces was investigated by X-ray Photoelectron Spectroscopy and the resistance to oxidation by the etching process, in reactive oxygen plasmas. Oxygen and nitrogen were detected in all the samples. While the concentration of the former continuously changed with t, that of N kept practically constant in small proportions. The film is predominantly formed by sp² states, but the proportion of sp³ hybridization slightly increased with t. The etching rate dropped under certain conditions of nitrogen bombardment whereas helium implantation has not significantly improved it. These results are ascribed to the crosslinking degree of the polymeric chains, ruled by the total amount of energy delivered to the film.

  16. Surface insulating properties of titanium implanted alumina ceramics by plasma immersion ion implantation

    Science.gov (United States)

    Zhu, Mingdong; Song, Falun; Li, Fei; Jin, Xiao; Wang, Xiaofeng; Wang, Langping

    2017-09-01

    The insulating property of the alumina ceramic in vacuum under high voltage is mainly limited by its surface properties. Plasma immersion ion implantation (PIII) is an effective method to modify the surface chemical and physical properties of the alumina ceramic. In order to improve the surface flashover voltage of the alumina ceramic in vacuum, titanium ions with an energy of about 20 keV were implanted into the surface of the alumina ceramic using the PIII method. The surface properties of the as-implanted samples, such as the chemical states of the titanium, morphology and surface resistivity, were characterized by X-ray photoelectron spectroscopy, scanning electron microscope and electrometer, respectively. The surface flashover voltages of the as-implanted alumina samples were measured by a vacuum surface flashover experimental system. The XPS spectra revealed that a compound of Ti, TiO2 and Al2O3 was formed in the inner surface of the alumina sample. The electrometer results showed that the surface resistivity of the implanted alumina decreased with increased implantation time. In addition, after the titanium ion implantation, the maximum hold-off voltage of alumina was increased to 38.4 kV, which was 21.5% higher than that of the unimplanted alumina ceramic.

  17. Dose-time relation in BF3 plasma immersion ion implantation

    Science.gov (United States)

    Shao, Jiqun; Round, Mark; Qin, Shu; Chan, Chung

    1995-03-01

    Etching and deposition rates of silicon and SiO2 during BF3 plasma immersion ion implantation are measured. The relation between total dose and plasma immersion ion implantation processing time is developed through computer modeling. The results are in very good agreement with the experimental data. Comparison with a previously published model is also given.

  18. Plasma immersion ion implantation. (Latest citations from the EI Compendex*plus database). Published Search

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-01-01

    The bibliography contains citations concerning plasma immersion ion implantation (PIII) and equipment. PIII is a new technique to implant plasma ions into materials for surface modification and treatment. Topics include plasma nitriding, semiconductor doping, ion energy distribution, ion dose, pulsed plasma, metal plasma, and defect passivation. References also review applications in semiconductor device and integrated circuit manufacture, silicon material fabrication, aerospace bearings, carbon coatings on metals, and ceramic coatings. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

  19. The third generation multi-purpose plasma immersion ion implanter for surface modification of materials

    CERN Document Server

    Tang Bao Yin; Wang Xiao Feng; Gan Kong Yin; Wang Song Yan; Chu, P K; Huang Nian Ning; Sun Hong

    2002-01-01

    The third generation multi-purpose plasma immersion ion implantation (PIII) equipment has been successfully used for research and development of surface modification of biomedical materials, metals and their alloys in the Southwest Jiaotong University. The implanter equipped with intense current, pulsed cathodic arc metal plasma sources which have both strong coating function and gas and metal ion implantation function. Its pulse high voltage power supply can provide big output current. It can acquire very good implantation dose uniformity. The equipment can both perform ion implantation and combine ion implantation with sputtering deposition and coating to form many kinds of synthetic surface modification techniques. The main design principles, features of important components and achievement of research works in recent time have been described

  20. Application of a pulsed, RF-driven, multicusp source for low energy plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Wengrow, A.B.; Leung, K.N.; Perkins, L.T.; Pickard, D.S.; Rickard, M.; Williams, M.D. [Lawrence Berkeley Lab., CA (United States); Tucker, M. [Spectrum Sciences, Inc., Santa Clara, CA (United States)

    1996-06-01

    The multicusp ion source can produce large volumes of uniform, quiescent, high density plasmas. A plasma chamber suited for plasma immersion ion implantation (PIII) was readily made. Conventional PIII pulses the bias voltage applied to the substrate which is immersed in a CW mode plasma. Here, a method by which the plasma itself is pulsed was developed. Typically pulse lengths of 500 {mu}s are used and are much shorter than that of the substrate voltage pulse (5-15 ms). This approach, together with low gas pressures and low bias voltages, permits the constant energy implantation of an entire wafer simultaneously without glow discharge. Results show that this process can yield implant currents of up to 2.5 mA/cm{sup 2}; thus very short implant times can be achieved. Uniformity of the ion flux is also discussed. As this method can be scaled to any dimension, it can be made to handle any size wafer.

  1. Application of nitrogen plasma immersion ion implantation to titanium nasal implants with nanonetwork surface structure

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Ying-Sui; Yang, Wei-En [Department of Dentistry, National Yang-Ming University, Taipei 112, Taiwan (China); Zhang, Lan [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Zhu, Hongqin [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Lan, Ming-Ying [Division of Rhinology, Department of Otolaryngology Head and Neck Surgery, Taipei Veterans General Hospital, Taipei 112, Taiwan and School of Medicine, National Yang-Ming University, Taipei 112, Taiwan (China); Lee, Sheng-Wei [Institute of Materials Science and Engineering, National Central University, Taoyuan 320, Taiwan (China); Huang, Her-Hsiung, E-mail: hhhuang@ym.edu.tw [Department of Dentistry, National Yang-Ming University, Taipei 112, Taiwan (China); Institute of Oral Biology, National Yang-Ming University, Taipei 112, Taiwan (China); Graduate Institute of Basic Medical Science, China Medical University, Taichung 404, Taiwan (China); Department of Medical Research, China Medical University Hospital, Taichung 407, Taiwan (China); Department of Bioinformatics and Medical Engineering, Asia University, Taichung 413, Taiwan (China); Department of Stomatology, Taipei Veterans General Hospital, Taipei 112, Taiwan (China)

    2016-07-15

    In nasal reconstruction, the response of cells to titanium (Ti) implants is mainly determined by surface features of the implant. In a pilot study, the authors applied electrochemical anodization to Ti surfaces in an alkaline solution to create a network of nanoscale surface structures. This nanonetwork was intended to enhance the responses of primary human nasal epithelial cell (HNEpC) to the Ti surface. In this study, the authors then treated the anodized, nanonetwork-structured Ti surface using nitrogen plasma immersion ion implantation (NPIII) in order to further improve the HNEpC response to the Ti surface. Subsequently, surface characterization was performed to elucidate morphology, roughness, wettability, and chemistry of specimens. Cytotoxicity, blood, and HNEpC responses were also evaluated. Our results demonstrate that NPIII treatment led to the formation of a noncytotoxic TiN-containing thin film (thickness <100 nm) on the electrochemically anodized Ti surface with a nanonetwork-structure. NPIII treatment was shown to improve blood clotting and the adhesion of platelets to the anodized Ti surface as well as the adhesion and proliferation of hNEpC. This research spreads our understanding of the fact that a TiN-containing thin film, produced using NPIII treatment, could be used to improve blood and HNEpC responses to anodized, nanonetwork-structured Ti surfaces in nasal implant applications.

  2. Deuterium retention after deuterium plasma implantation in tungsten pre-damaged by fast C+ ions

    Science.gov (United States)

    Efimov, V. S.; Gasparyan, Yu M.; Pisarev, A. A.; Khripunov, B. I.; Koidan, V. S.; Ryazanov, A. I.; Semenov, E. V.

    2016-09-01

    Thermal desorption of deuterium from W was investigated. Virgin samples and samples damaged by 10 MeV C 3+ ions were implanted from plasma in the LENTA facility at 370 K and 773 K. In comparison with the undamaged sample, deuterium retention in the damaged sample slightly increased in the case of deuterium implantation at RT, but decreased in the case of deuterium implantation at 773 K. At 773 K, deuterium was concluded to diffuse far behind the D ion range in the virgin sample, while C implantation region was concluded to be a barrier for D diffusion in the damaged sample.

  3. Effect of plasma immersion ion implantation in TiNi implants on its interaction with animal subcutaneous tissues

    Science.gov (United States)

    Lotkov, Aleksandr I.; Kashin, Oleg A.; Kudryavtseva, Yuliya A.; Shishkova, Darya K.; Krukovskii, Konstantin V.; Kudryashov, Andrey N.

    2016-08-01

    Here we investigated in vivo interaction of Si-modified titanium nickelide (TiNi) samples with adjacent tissues in a rat subcutaneous implant model to assess the impact of the modification on the biocompatibility of the implant. Modification was performed by plasma immersion ion processing, which allows doping of different elements into surface layers of complex-shaped articles. The aim of modification was to reduce the level of toxic Ni ions on the implant surface for increasing biocompatibility. We identified a thin connective tissue capsule, endothelial cells, and capillary-like structures around the Si-modified implants both 30 and 90 days postimplantation. No signs of inflammation were found. In conclusion, modification of TiNi samples with Si ions increases biocompatibility of the implant.

  4. Pulsed ion sheath dynamics in a cylindrical bore for inner surface grid-enhanced plasma source ion implantation

    CERN Document Server

    Wang Jiu Li; Fan Song Hua; Yang Wu Bao; Yang Size

    2002-01-01

    Based on authors' recently proposed grid-enhanced plasma source ion implantation (GEPSII) technique for inner surface modification of materials with cylindrical geometry, the authors present the corresponding theoretical studies of the temporal evolution of the plasma ion sheath between the grid electrode and the target in a cylindrical bore. Typical results such as the ion sheath evolution, time-dependent ion density and time-integrated ion energy distribution at the target are calculated by solving Poisson's equation coupled with fluid equations for collisionless ions and Boltzmann assumption for electrons using finite difference methods. The calculated results can further verify the feasibility and superiority of this new technique

  5. Platelet adhesion and plasma protein adsorption control of collagen surfaces by He{sup +} ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Kurotobi, K. E-mail: kurotobi@postman.riken.go.jp; Suzuki, Y.; Nakajima, H.; Suzuki, H.; Iwaki, M

    2003-05-01

    He{sup +} ion implanted collagen-coated tubes with a fluence of 1 x 10{sup 14} ions/cm{sup 2} were exhibited antithrombogenicity. To investigate the mechanisms of antithrombogenicity of these samples, plasma protein adsorption assay and platelet adhesion experiments were performed. The adsorption of fibrinogen (Fg) and von Willebrand factor (vWf) was minimum on the He{sup +} ion implanted collagen with a fluence of 1 x 10{sup 14} ions/cm{sup 2}. Platelet adhesion (using platelet rich plasma) was inhibited on the He{sup +} ion implanted collagen with a fluence of 1 x 10{sup 14} ions/cm{sup 2} and was accelerated on the untreated collagen and ion implanted collagen with fluences of 1 x 10{sup 13}, 1 x 10{sup 15} and 1 x 10{sup 16} ions/cm{sup 2}. Platelet activation with washed platelets was observed on untreated collagen and He{sup +} ion implanted collagen with a fluence of 1 x 10{sup 14} ions/cm{sup 2} and was inhibited with fluences of 1 x 10{sup 13}, 1 x 10{sup 15} and 1 x 10{sup 16} ions/cm{sup 2}. Generally, platelets can react with a specific ligand inside the collagen (GFOGER sequence). The results of platelets adhesion experiments using washed platelets indicated that there were no ligands such as GFOGER on the He{sup +} ion implanted collagen over a fluence of 1 x 10{sup 13} ions/cm{sup 2}. On the 1 x 10{sup 14} ions/cm{sup 2} implanted collagen, no platelet activation was observed due to the influence of plasma proteins. >From the above, it is concluded that the decrease of adsorbed Fg and vWf caused the antithrombogenicity of He{sup +} ion implanted collagen with a fluence of 1 x 10{sup 14} ions/cm{sup 2} and that plasma protein adsorption took an important role repairing the graft surface.

  6. Plasma immersion ion implantation for the efficient surface modification of medical materials

    Energy Technology Data Exchange (ETDEWEB)

    Slabodchikov, Vladimir A., E-mail: dipis1991@mail.ru; Borisov, Dmitry P., E-mail: borengin@mail.ru; Kuznetsov, Vladimir M., E-mail: kuznetsov@rec.tsu.ru [National Research Tomsk State University, Tomsk, 634050 (Russian Federation)

    2015-10-27

    The paper reports on a new method of plasma immersion ion implantation for the surface modification of medical materials using the example of nickel-titanium (NiTi) alloys much used for manufacturing medical implants. The chemical composition and surface properties of NiTi alloys doped with silicon by conventional ion implantation and by the proposed plasma immersion method are compared. It is shown that the new plasma immersion method is more efficient than conventional ion beam treatment and provides Si implantation into NiTi surface layers through a depth of a hundred nanometers at low bias voltages (400 V) and temperatures (≤150°C) of the substrate. The research results suggest that the chemical composition and surface properties of materials required for medicine, e.g., NiTi alloys, can be successfully attained through modification by the proposed method of plasma immersion ion implantation and by other methods based on the proposed vacuum equipment without using any conventional ion beam treatment.

  7. Characterisation of polystyrene coatings after plasma immersion ion implantation and adsorption of protein

    CERN Document Server

    Dekker, S; Steel, B; Bilek, M M M; McKenzie, D R; James, M

    2012-01-01

    A polystyrene film spun onto polished silicon substrates was implanted with either nitrogen or argon ions using plasma immersion ion implantation (PIII) and subsequently investigated by X-ray and neutron reflectometry, UV-VIS and FTIR ellipsometry, as well as by FTIR and Raman spectroscopy. The depth profile of the densified carbon structures resulting from the ion collision cascades in the polystyrene coating are clearly observed by both X-ray and neutron reflectometry. Argon ions produce a higher density modified layer at a shallower depth than nitrogen ions. The thickness measured for these graded layers agrees with the expected depths of ion implantation as calculated by SRIM. The sensitivity of X-ray and neutron reflectometry allows resolution of density and hydrogen content gradients within the graphitized layers. The treated layers were found to covalently immobilized protein directly from solution. The tropoelastin protein monolayers immobilized on the surface were characterized. Tropoelastin remained...

  8. Plasma-polymerized hexamethyldisilazane treated by nitrogen plasma immersion ion implantation technique

    Energy Technology Data Exchange (ETDEWEB)

    Honda, R Y; Mota, R P; Batocki, R G S; Santos, D C R; Nicoleti, T; Kostov, K G; Kayama, M E; Algatti, M A [Laboratorio de Plasma, Faculdade de Engenharia, UNESP, Av. Dr Ariberto Pereira da Cunha-333, 12516-410, Guaratingueta, SP (Brazil); Cruz, N C [Laboratorio de Plasmas Tecnologicos, Unidade Diferenciada, UNESP, Av. Tres de Marco-511, 18085-180, Sorocaba, SP (Brazil); Ruggiero, L, E-mail: honda@feg.unesp.b [Faculdade de Ciencias, UNESP, Av. Luis E. Carrijo Coube 14-1, 17033-360, Bauru, SP (Brazil)

    2009-05-01

    This paper describes the effect of nitrogen Plasma Immersion Ion Implantation (PIII) on chemical structure, refraction index and surface hardness of plasma-polymerized hexamethyldisilazane (PPHMDSN) thin films. Firstly, polymeric films were deposited at 13.56 MHz radiofrequency (RF) Plasma Enhanced Chemical Vapour Deposition (PECVD) and then, were treated by nitrogen PIII from 15 to 60 min. Fourier Transformed Infrared (FTIR) spectroscopy was employed to analyse the molecular structure of the samples, and it revealed that vibrations modes at 3350 cm{sup -1}, 2960 cm{sup -1}, 1650 cm{sup -1}, 1250 cm{sup -1} and 1050 cm{sup -1} were altered by nitrogen PIII. Visible-ultraviolet (vis-UV) spectroscopy was used to evaluate film refractive index and the results showed a slight increase from 1.6 to 1.8 following the implantation time. Nanoindentation revealed a surface hardness rise from 0.5 to 2.3 GPa as PIII treatment time increased. These results indicate nitrogen PIII is very promising in improving optical and mechanical properties of PPHMDSN films.

  9. CEMS-investigations of AISI M2 steel after nitrogen plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Uglov, V.V. E-mail: info@research.bsu.unibel.by; Kholmetskii, A.L.; Kuleshov, A.K.; Fedotova, J.A.; Rusalsky, D.P.; Khodasevich, V.V.; Ruebenbauer, K.; Richter, E.; Guenzel, R.; Parascandola, S

    1999-01-02

    Plasma-immersion ion implantation (PIII) and high-current ion implantation (HCII) of nitrogen into M2 steel were carried out. The formation of a multilayer system consisting of a surface layer of austenite on top of {epsilon}-Fe{sub 3}N nitride precipitates was manifested in M2 steel after PIII. HCII forms a thick (more than 14 {mu}m) layer with {epsilon}-Fe{sub 3}N precipitates. Apparently, the formation of the austenite layer after PIII is connected with a local tempering of the steel surface by the pulsed nitrogen ion beam.

  10. High power impulse magnetron sputtering and related discharges: scalable plasma sources for plasma-based ion implantation and deposition

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2009-09-01

    High power impulse magnetron sputtering (HIPIMS) and related self-sputtering techniques are reviewed from a viewpoint of plasma-based ion implantation and deposition (PBII&D). HIPIMS combines the classical, scalable sputtering technology with pulsed power, which is an elegant way of ionizing the sputtered atoms. Related approaches, such as sustained self-sputtering, are also considered. The resulting intense flux of ions to the substrate consists of a mixture of metal and gas ions when using a process gas, or of metal ions only when using `gasless? or pure self-sputtering. In many respects, processing with HIPIMS plasmas is similar to processing with filtered cathodic arc plasmas, though the former is easier to scale to large areas. Both ion implantation and etching (high bias voltage, without deposition) and thin film deposition (low bias, or bias of low duty cycle) have been demonstrated.

  11. Capacitance of High-Voltage Coaxial Cable in Plasma Immersion Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Plasma immersion ion implantation (PIII) is an excellent technique for the surface modification of complex-shaped components. Owing to pulsed operation mode of the high voltage and large slew rate, the capacitance on the high-voltage coaxial cable can be detrimental to the processand cannot be ignored. In fact, a significant portion of the rise-time/fall-time of the implantation voltage pulse and big initial current can be attributed to the coaxial cable.

  12. Etching and structure transformations in uncured epoxy resin under rf-plasma and plasma immersion ion implantation

    Science.gov (United States)

    Kondyurin, Alexey; Bilek, Marcela

    2010-05-01

    Uncured epoxy resin was spun onto silicon wafer and treated by plasma and plasma immersion ion implantation (PIII) by argon ions with energy up to 20 keV. Ellipsometry, FTIR spectroscopy and optical microscopy methods were used for analysis. The etching, carbonization, oxidation and crosslinking effects were observed. The curing reactions in modified epoxy resin are observed without a hardening agent. A model of structural transformations in epoxy resin under plasma and ion beam irradiation is proposed and discussed in relation to processes in a space environment.

  13. From plasma immersion ion implantation to deposition: A historical perspective on principles and trends

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2001-06-14

    Plasma immersion techniques of surface modification are known under a myriad of names. The family of techniques reaches from pure plasma ion implantation, to ion implantation and deposition hybrid modes, to modes that are essentially plasma film deposition with substrate bias. In the most general sense, all plasma immersion techniques have in common that the surface of a substrate (target) is exposed to plasma and that relatively high substrate bias is applied. The bias is usually pulsed. In this review, the roots of immersion techniques are explored, some going back to the 1800s, followed by a discussion of the groundbreaking works of Adler and Conrad in the 1980s. In the 1990s, plasma immersion techniques matured in theoretical understanding, scaling, and the range of applications. First commercial facilities are now operational. Various immersion concepts are compiled and explained in this review. While gas (often nitrogen) ion implantation dominated the early years, film-forming immersion techniques and semiconductor processing gained importance. In the 1980s and 1990s we have seen exponential growth of the field but signs of slowdown are clear since 1998. Nevertheless, plasma immersion techniques have found, and will continue to have, an important place among surface modification techniques.

  14. Laser plasma ion implantation and deposition of platinum for SiC-based hydrogen detector fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Fominski, V. Yu., E-mail: vyfominskij@mephi.ru [National Research Nuclear University MEPhI, Kashirskoe sh., 31, Moscow 115409 (Russian Federation); Grigoriev, S.N. [Moscow State University of Technology STANKIN, Vadkovskii per., 3a, Moscow 127005 (Russian Federation); Romanov, R.I. [National Research Nuclear University MEPhI, Kashirskoe sh., 31, Moscow 115409 (Russian Federation); Gnedovets, A.G. [Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences, Leninsky Prospect 49, Moscow 119991 (Russian Federation); Chernykh, P.N. [Lomonosov Moscow State University Scobeltsyn Institute of Nuclear Physics, 1(2) Leninskie Gory, GSP-1, Moscow 119991 (Russian Federation)

    2013-10-15

    Highlights: •Pt ion implantation and film deposition were carried out using pulsed laser plume. •Experimental diagnostics and modeling of Pt ion implantation in SiC were performed. •Mechanism of Pt depth distribution in SiC substrate was determined. •Layered structure of Pt on Pt-doped SiC crystal was used to detect hydrogen at 500 °C. •The response of sensor to hydrogen was pronounced and stable after long-term tests. -- Abstract: A pulsed plasma plume obtained by pulsed laser irradiation of a Pt target was used to fabricate a hydrogen sensor on a 6H–SiC single crystal by means of ion implantation followed by thin film deposition. To realize the ion implantation, high voltage pulses with positive polarity were applied to the Pt target when the laser plasma expanded from the target to the SiC substrate. Experimental diagnostics of pulsed ion beams extracted from laser-produced plasma were performed and the structure of the SiC crystal after high-temperature (500 °C) ion implantation was studied by Rutherford backscattering spectroscopy of {sup 4}He{sup +} ions. At the same time, a one-dimensional model of the plasma movement in a pulsed electric field was developed and simulations were carried out using the particle-in-cell method. Modeling allowed determination of the ion energy distribution depending on the delay time of the high voltage pulse after the laser pulse. The calculated energy distribution of Pt ions was used to predict the depth profile of implanted Pt ions in the SiC substrate. The predicted profile agreed sufficiently well with the experimentally measured depth distribution of Pt in the SiC substrate. To characterize the fabricated SiC sensor, the current flow through a barrier structure was studied. The volt–ampere characteristics of the structure were measured in air and in a mixture of air and hydrogen (2%) at a temperature of 500 °C. The characteristic value of the change in voltage exceeded 2 V at the bias current of 1 mA when

  15. Nitrogen mass transfer models for plasma-based low-energy ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Bocong; Wang, Kesheng; Zhang, Zhipeng; Che, Honglong; Lei, Mingkai, E-mail: mklei@dlut.edu.cn [Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China)

    2015-03-15

    The nitrogen mass transfer process in plasma-based low-energy ion implantation (PBLEII) is theoretically and experimentally studied in order to explore the process mechanism of PBLEII and therefore to optimize the apparatus design and the process conditions. An electron cyclotron resonance (ECR) microwave discharge generates the nitrogen plasma with a high density of 10{sup 11}–10{sup 12} ions/cm{sup 3}, which diffuses downstream to the process chamber along the divergent magnetic field. The nitrogen ions in the plasma implant into the surface and transport to the matrix of an austenitic stainless steel under the low negative pulsed bias of −2 kV at a process temperature of 400 °C. A global plasma model is used to simulate the ECR microwave plasma discharge for a range of working pressures and microwave powers. The fluid models are adopted to calculate the plasma downstream diffusion, the sheath expansion and the low-energy ion implantation on the surface. A nonlinear kinetic discrete model is established to describe the nitrogen transport in the austenitic stainless steel and the results are compared with the experimental measurements. Under an average implantation current density of 0.3–0.6 mA/cm{sup 2}, the surface nitrogen concentration in the range from 18.5 to 29 at. % is a critical factor for the nitrogen transport in the AISI 304 austenitic stainless steel by PBLEII, which accelerates the implanted nitrogen diffusion inward up to 6–12 μm during a nitriding time of 4 h.

  16. Effect of Yttrium Pre-Implantation on Implantation Behavior of Ti-6Al-4V Alloy in Nitrogen Plasma Immersion Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    In order to increase the peak depth of nitrogen atoms during the nitrogen plasma immersion ion implantation of Ti-6Al-4V alloy, the rare earth metal yttrium was applied. In the experiment, yttrium and nitrogen ions were implanted under the voltage of 20 and 30 kV, respectively. In the samples with yttrium pre-implantation for 30 min, the Auger electron spectroscopy(AES) analysis shows that the peak depth of the nitrogen atoms increases from 50 up to 100 nm. It can also be seen from the tribological tests that the wear resistance of these samples is increased remarkably.

  17. Surface Properties of AZ31B Magnesium Alloy by Oxygen Plasma Immersion Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    WEI Chunbei; GONG Chunzhi; TIAN Xiubo; YANG Shiqin; Ricky K.Y.Fu; Paul K.CHU

    2009-01-01

    Oxygen plasma immersion ion implantation(PIII)has been conducted on AZ31B magnesium alloy using different bias voltages.The modified layer is mainly composed of MgO and some MgAl2O4.Results form Rutherford backscattering spectrometry(RBS)and X-ray photoelectron spectroscopy(XPS)indicate that the bias voltage has a significant impact on the structure of the films.The oxygen implant fluences and the thickness of the implanted layer increase with higher bias voltages.A high bias voltage such as 60 kV leads to an unexpected increments in the oxygen-rich layer's thickness compared to those of the samples implanted at 20 kV and 40 kV.The hardness is hardly enhanced by oxygen PIII.The corrosion resistance of magnesium alloy may be improved by a proper implantation voltage.

  18. Experimental study of dropwise condensation on plasma-ion implanted stainless steel tubes

    Energy Technology Data Exchange (ETDEWEB)

    Bani Kananeh, A.; Rausch, M.H.; Froeba, A.P.; Leipertz, A. [Lehrstuhl fuer Technische Thermodynamik (LTT), Universitaet Erlangen-Nuernberg, Am Weichselgarten 8, D-91058 Erlangen (Germany)

    2006-12-15

    Plasma-ion implantation was used to achieve stable dropwise condensation of saturated steam on stainless steel tubes. For the investigation of the efficiency of plasma-ion implantation regarding the condensation process a condenser was constructed in order to measure the heat flux density q-dot and the heat transfer coefficient h{sub c} for the condensation of steam on the outside surface of a single horizontal tube. For tubes implanted with a nitrogen ion dose of 10{sup 16} cm{sup -2}, the heat transfer coefficient h{sub c} was found to be larger, by a factor of 3.2, in comparison to values theoretically calculated by the corrected Nusselt film theory. The heat flux density q-dot and the heat transfer coefficient h{sub c} were found to increase with increasing ion dose and steam pressure. The heat transfer coefficient decreases with increasing surface subcooling as it has been found in former work for dropwise condensation on ion implanted vertical plates. (author)

  19. Plasma-based ion implantation and deposition: A review of physics,technology, and applications

    Energy Technology Data Exchange (ETDEWEB)

    Pelletier, Jacques; Anders, Andre

    2005-05-16

    After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes used of PBII&D to produce surgical implants, bio- and blood-compatible surfaces and coatings, etc. With limitations, also non-conducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few eV up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process non-flat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures. We use the acronym PBII&D when referring to both implantation and deposition, while PBIID implies that deposition is part of the process.

  20. Irradiation influence on Mylar and Makrofol induced by argon ions in a plasma immersion ion implantation system

    Energy Technology Data Exchange (ETDEWEB)

    Hassan, A. [Accelerators & Ion Sources Department, Nuclear Research Center, Atomic Energy Authority, P.O. 13759, Cairo (Egypt); El-Saftawy, A.A., E-mail: aama1978@yahoo.com [Accelerators & Ion Sources Department, Nuclear Research Center, Atomic Energy Authority, P.O. 13759, Cairo (Egypt); Aal, S.A. Abd El [Central Lab. for Elemental & Isotopic Analysis, Nuclear Research Center, Atomic Energy Authority, P.O. 13759, Cairo (Egypt); Ghazaly, M. El [Physiology Department, College of Medicine, Taif University, P.O. 888, Taif (Saudi Arabia); Physics Department, Faculty of Science, Zagazig University, P.O. 44519, Zagazig (Egypt)

    2015-08-30

    Highlights: • A home-built plasma immersion ion implantation system was tested in modifying surfaces. • Wettability modifications within the energy range 10 keV implantation are not investigated elsewhere, up to our knowledge. • The wettability of Mylar and Makrofol surface was enhanced by the dual effect of ion implantation and plasma treatment. • The improved wettability was found to depend on both surface roughness and chemistry. • The adhesive bonding and surface energy of the polymers are improved. - Abstract: Mylar and Makrofol polycarbonate polymers were irradiated by Ar ions in a plasma immersion ion implantation (PIII) system. The surface wettability of both polymers was investigated by employing the contact angle method. The measured contact angles were found to depend on the surface layer properties. Good wetting surfaces were found to depend not only on surface roughness but also on its chemistry that analyzed by Fourier transform infrared (FTIR) spectroscopy. Surfaces topography and roughness was investigated and correlated to their surface energy which studied with the aid of acid-base model for evaluating the improvement of surface wettability after irradiation. PIII improves polymers surface properties efficiently in a controllable way.

  1. Hybrid processing of Ti-6Al-4V using plasma immersion ion implantation combined with plasma nitriding

    Directory of Open Access Journals (Sweden)

    Silva Maria Margareth da

    2006-01-01

    Full Text Available Based on the fact that the Ti-6Al-4V alloy has good mechanical properties, excellent resistance to corrosion and also excellent biocompatibility, however with low wear resistance, this work aims to test plasma processes or combination of plasma and ion implantation processes to improve these characteristics. Two types of processing were used: two steps PIII (Plasma Immersion Ion Implantation combined with PN (Plasma Nitriding and single step PIII treatment. According to Auger Electron Spectroscopy (AES results, the best solution was obtained by PIII for 150 minutes resulting in ~ 65 nm of nitrogen implanted layer, while the sample treated with PIII (75 minutes and PN (75 minutes reached ~ 35 nm implanted layer. The improvement of surface properties could also be confirmed by the nanoindentation technique, with values of hardness increasing for both processes. AFM (Atomic Force Microscopy characterization showed that the single step PIII process presented greater efficiency than the duplex process (PIII + PN, probably due to the sputtering occurring during the second step (PN removing partially the implanted layer of first step (PIII.

  2. A Method for Measurement of Dynamic Sheath Behavior in Plasma Immersion Ion Implantation and Deposition Process

    Institute of Scientific and Technical Information of China (English)

    WU Hongchen; MA Guojia; PENG Liping; FENG Jianji; ZHANG Huafang; MA Tengcai

    2008-01-01

    A method to measure temporal and spatial evolution of sheath in plasma immersion ion implantation (PⅢ) process is presented.A long Langrnuir probe (φ 5 mm×φ 78 mm) with low bias is used to detect the sheath propagation and backup with time.The aubstrate made of Al cylinder (φ20 mm×φ150 mm) is immersed in nitrogen and argon plasma induced by magnetron self-sustained discharge.The maximum sheath sizes,at different plasma densities under different discharge currents,are measured and compared.

  3. Synthesis of tantalum nitride diffusion barriers for Cu metal by plasma immersion ion implantation

    CERN Document Server

    Kumar, M; Kumar, D; George, P J; Paul, A K

    2002-01-01

    A Tantalum nitride diffusion barrier layer for copper metal was synthesized by Plasma Immersion Ion Implantation technique (PIII). Effect of nitrogen dose in Ta layer was investigated in improving its diffusion barrier properties. Silicon wafers coated with Ta were implanted with nitrogen at two different doses viz. 10$^{15}$ions/cm$^2$ and 10$^{17}$ions/cm$^2$ corresponding to low and high dose regime. High dose of implanted nitrogen ions in the film render it to become Ta(N), Thereafter a copper (Cu) layer was deposited on the samples to produce Cu/Ta(N)/Si structure. To evaluate the barrier properties of Ta(N) these samples were annealed up to 700$^\\circ$C for 30 minutes. Sheet resistance, X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM) measurements were carried out to investigate the effect of annealing. Low dose implanted Ta layer does not show any change in its diffusion barrier properties, while high dose implanted layer stops the diffusion of Cu metal through it at annealing temperature...

  4. Ellipsometric study of crystalline silicon hydrogenated by plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Szekeres, A. [Institute of Solid State Physics, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Alexandrova, S. [Department of Applied Physics, Technical University of Sofia, Kl. Ohridski 8, 1797 Sofia (Bulgaria); Petrik, P., E-mail: petrik@mfa.kfki.hu [MFA Institute for Technical Physics and Materials Science, TTK Research Centre for Natural Sciences, Konkoly Thege Rd. 29-33, 1121 Budapest (Hungary); Fodor, B. [MFA Institute for Technical Physics and Materials Science, TTK Research Centre for Natural Sciences, Konkoly Thege Rd. 29-33, 1121 Budapest (Hungary); Bakalova, S. [Institute of Solid State Physics, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria)

    2013-09-15

    The structure and the optical properties of thin Si layer hydrogenated by shallow plasma ion implantation with different fluences up to 10{sup 15} cm{sup −2} are studied using spectroscopic ellipsometry and simulation of the distributions of the ions and implantation induced defects. The implantation was regarded to proceed into Si through the native SiO{sub 2}. Two-layer optical models are applied for examination of the composition and dielectric function behavior of the formed structures. The native oxide is found to be 3 nm thick. The thickness of the Si modified layer decreased 23 to 14 nm with ion fluence due to increased formation of highly hydrogenated surface region that hinder further H-penetration into the Si bulk, especially at the highest fluence. Shifts of the features in the obtained dielectric functions related with Si interband transitions at about 3.4 and 4.2 eV are found caused by process-induced tensile stress. The modified Si region is related rather to defects created by the ion implantation process than the projected range of hydrogen ions. The overall layer modification can be characterized by a low degree of amorphization (up to 5.8%), creation of structural defects and internal tensile stress.

  5. An All Solid-State Pulsed Power Generator for Plasma Immersion Ion Implantation (PⅢ)

    Institute of Scientific and Technical Information of China (English)

    LIU Kefu; QIU Jian; WU Yifan

    2009-01-01

    An all solid-state pulsed power generator for plasma immersion ion implantation (PⅢ) is described. The pulsed power system is based on a Marx circuit configuration and semi-conductor switches, which have many advantages in adjustable repetition frequency, pulse width modulation and long serving life compared with the conventional circuit category, tube-based technologies such as gridded vacuum tubes, thyratrons, pulse forming networks and transformers.The operation of PⅢ with pulse repetition frequencies up to 500 Hz has been achieved at a pulse voltage amplitude from 2 kV to 60 kV, with an adjustable pulse duration from 1 μs to 100 μs.The proposed system and its performance, as used to drive a plasma ion implantation chamber,axe described in detail on the basis of the experimental results.

  6. Diamond-like carbon produced by plasma source ion implantation as a corrosion barrier

    Energy Technology Data Exchange (ETDEWEB)

    Lillard, R.S.; Butt, D.P.; Taylor, T.N.; Walter, K.C.; Nastasi, M.

    1998-03-01

    There currently exists a broad range of applications for which the ability to produce an adherent, hard, wear and, corrosion-resistant coating plays a vital role. These applications include engine components, orthopedic devices, textile manufacturing components, hard disk media, optical coatings, and cutting and machining tools (e.g., punches, taps, scoring dies, and extrusion dies). Ion beam processing can play an important role in all of these technologies. Plasma source ion implantation (PSII) is an emerging technology which has the potential to overcome the limitations of conventional ion implantation by: (1) reducing the time and expense for implanting onto complex shapes and large areas and (2) extending the thickness of the modification zone through ion beam enhanced plasma growth of surface coatings. In PSII, targets are placed directly in a plasma source and then pulse biased to produce a non-line-of-sight process for complex-shaped targets without complex fixturing. If the pulse bias is a relatively high negative potential (20 to 100 kV) ion implantation will result. If however, a low voltage (50--1,200 eV) high duty cycle pulse bias is applied, film deposition from the chamber gas will result, thereby increasing the extent of the surface modification into the 1--10 micron regime. To evaluate the potential for DLC to be used as a corrosion barrier, Electrochemical Impedance Spectroscopy (EIS) and traditional electrochemistry techniques were used to investigate the breakdown mechanism in chloride and nonchloride containing environments. The effect of surface preparation on coating breakdown was also evaluated.

  7. Practical plasma immersion ion implantation for stress regulation and treatment of insulators

    Energy Technology Data Exchange (ETDEWEB)

    Bilek, M.M.M.; McKenzie, D.R.; Tarrant, R.N.; Oates, T.W.H.; Ruch, P.; Newton-McGee, K.; Shi, Yang; Tompsett, D.; Nguyen, H.C.; Gan, B.K.; Kwok, D.T. [School of Physics, University of Sydney, NSW (Australia)

    2004-07-01

    Plasma immersion ion implantation has been attracting the interest of research groups around the world over the last two decades. The technique has been developed to the stage where it is a well-established technique for a number of materials processing applications, such as plasma nitriding. Recent research has focussed on developing the method for a range of new applications, including stress regulation and control of microstructure, as well as surface treatment of insulators. Recent developments in these technologically important applications are discussed in this paper. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Two-dimensional simulation and modeling for dynamic sheath expansion during plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Qin, S.; Zhou, Y.; Chan, C. [Northeastern Univ., Boston, MA (United States)

    1996-12-31

    Plasma immersion ion implantation (PIII) has been utilized as a low cost, low energy doping method for large area targets with applications to semiconductor manufacturing. They include doping, shallow junction formation, hydrogenation for poly-Si thin film transistors, and SIMOX (Separated by IMplant of OXygen) structure formation. The characteristics of the dynamic sheath expansion during PIII process is very important for the optimum PIII configuration design and process control in order to obtain more accurate doping results such as the implant dose and impurity profile. For example, the sheath thickness is critical to chamber design and monoenergetic ion implant for a more accurate control of as-implanted impurity profile of shallow junction and SIMOX structures. A PDP2 simulation code has been used to simulate PIII process which will aid in understanding the physics of PIII processes and obtain the optimum process parameters. This model was verified by comparing with the PDP2 computer simulations and the experimental results of the PIII doping processes.

  9. Plasma immersion ion implantation of boron for ribbon silicon solar cells

    Directory of Open Access Journals (Sweden)

    Derbouz K.

    2013-09-01

    Full Text Available In this work, we report for the first time on the solar cell fabrication on n-type silicon RST (for Ribbon on Sacrificial Template using plasma immersion ion implantation. The experiments were also carried out on FZ silicon as a reference. Boron was implanted at energies from 10 to 15 kV and doses from 1015 to 1016 cm-2, then activated by a thermal annealing in a conventional furnace at 900 and 950 °C for 30 min. The n+ region acting as a back surface field was achieved by phosphorus spin-coating. The frontside boron emitter was passivated either by applying a 10 nm deposited SiOX plasma-enhanced chemical vapor deposition (PECVD or with a 10 nm grown thermal oxide. The anti-reflection coating layer formed a 60 nm thick SiNX layer. We show that energies less than 15 kV and doses around 5 × 1015 cm-2 are appropriate to achieve open circuit voltage higher than 590 mV and efficiency around 16.7% on FZ-Si. The photovoltaic performances on ribbon silicon are so far limited by the bulk quality of the material and by the quality of the junction through the presence of silicon carbide precipitates at the surface. Nevertheless, we demonstrate that plasma immersion ion implantation is very promising for solar cell fabrication on ultrathin silicon wafers such as ribbons.

  10. Plasma immersion ion implantation of boron for ribbon silicon solar cells

    Science.gov (United States)

    Derbouz, K.; Michel, T.; De Moro, F.; Spiegel, Y.; Torregrosa, F.; Belouet, C.; Slaoui, A.

    2013-09-01

    In this work, we report for the first time on the solar cell fabrication on n-type silicon RST (for Ribbon on Sacrificial Template) using plasma immersion ion implantation. The experiments were also carried out on FZ silicon as a reference. Boron was implanted at energies from 10 to 15 kV and doses from 1015 to 1016 cm-2, then activated by a thermal annealing in a conventional furnace at 900 and 950 °C for 30 min. The n+ region acting as a back surface field was achieved by phosphorus spin-coating. The frontside boron emitter was passivated either by applying a 10 nm deposited SiOX plasma-enhanced chemical vapor deposition (PECVD) or with a 10 nm grown thermal oxide. The anti-reflection coating layer formed a 60 nm thick SiNX layer. We show that energies less than 15 kV and doses around 5 × 1015 cm-2 are appropriate to achieve open circuit voltage higher than 590 mV and efficiency around 16.7% on FZ-Si. The photovoltaic performances on ribbon silicon are so far limited by the bulk quality of the material and by the quality of the junction through the presence of silicon carbide precipitates at the surface. Nevertheless, we demonstrate that plasma immersion ion implantation is very promising for solar cell fabrication on ultrathin silicon wafers such as ribbons.

  11. Simultaneous Sterilization With Surface Modification Of Plastic Bottle By Plasma-Based Ion Implantation

    Science.gov (United States)

    Sakudo, N.; Ikenaga, N.; Ikeda, F.; Nakayama, Y.; Kishi, Y.; Yajima, Z.

    2011-01-01

    Dry sterilization of polymeric material is developed. The technique utilizes the plasma-based ion implantation which is same as for surface modification of polymers. Experimental data for sterilization are obtained by using spores of Bacillus subtilis as samples. On the other hand we previously showed that the surface modification enhanced the gas barrier characteristics of plastic bottles. Comparing the implantation conditions for the sterilization experiment with those for the surface modification, we find that both sterilization and surface modification are simultaneously performed in a certain range of implantation conditions. This implies that the present bottling system for plastic vessels will be simplified and streamlined by excluding the toxic peroxide water that has been used in the traditional sterilization processes.

  12. Optimization of a plasma immersion ion implantation process for shallow junctions in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ray, Ashok; Nori, Rajashree; Bhatt, Piyush; Lodha, Saurabh; Pinto, Richard, E-mail: rpinto@ee.iitb.ac.in; Rao, Valipe Ramgopal [Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Jomard, François; Neumann-Spallart, Michael [Groupe d' Étude de la Matière Condensée, C.N.R.S./Université de Versailles-St.Quentin, 45, Avenue des États-Unis, 78035 Versailles Cedex (France)

    2014-11-01

    A plasma immersion ion implantation (PIII) process has been developed for realizing shallow doping profiles of phosphorus and boron in silicon using an in-house built dual chamber cluster tool. High Si etch rates observed in a 5% PH{sub 3} in H{sub 2} plasma have been ascribed to high concentration of H(α) radicals. Therefore, subsequent work was carried out with 5% PH{sub 3} in He, leading to much smaller etch rates. By optical emission spectroscopy, the radical species H(α), PH*{sub 2}, and PH* have been identified. The concentration of all three species increased with pressure. Also, ion concentrations increased with pressure as evidenced by Langmuir data, with a maximum occurring at 0.12 mbar. The duty cycle of pulsed DC bias has a significant bearing on both the implantation and the etching process as it controls the leakage of positive charge collected at the surface of the silicon wafer during pulse on-time generated primarily due to secondary electron emission. The P implant process was optimized for a duty cycle of 10% or less at a pressure of 0.12 mbar with implant times as low as 30 s. Secondary ion mass spectroscopy showed a P dopant depth of 145 nm after rapid thermal annealing (RTA) at 950 °C for 5 s, resulting in a sheet resistance of 77 Ω/◻. Si n{sup +}/p diodes fabricated with phosphorus implantation using optimized PIII and RTA conditions exhibit J{sub on}/J{sub off} > 10{sup 6} with an ideality factor of nearly 1.2. Using similar conditions, shallow doping profiles of B in silicon have also been realized.

  13. Irradiation influence on Mylar and Makrofol induced by argon ions in a plasma immersion ion implantation system

    Science.gov (United States)

    Hassan, A.; El-Saftawy, A. A.; Aal, S. A. Abd El; Ghazaly, M. El

    2015-08-01

    Mylar and Makrofol polycarbonate polymers were irradiated by Ar ions in a plasma immersion ion implantation (PIII) system. The surface wettability of both polymers was investigated by employing the contact angle method. The measured contact angles were found to depend on the surface layer properties. Good wetting surfaces were found to depend not only on surface roughness but also on its chemistry that analyzed by Fourier transform infrared (FTIR) spectroscopy. Surfaces topography and roughness was investigated and correlated to their surface energy which studied with the aid of acid-base model for evaluating the improvement of surface wettability after irradiation. PIII improves polymers surface properties efficiently in a controllable way.

  14. Modification of diamond-like carbon films by nitrogen incorporation via plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Flege, S., E-mail: flege@ca.tu-darmstadt.de [Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany); Hatada, R.; Hoefling, M.; Hanauer, A.; Abel, A. [Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany); Baba, K. [Industrial Technology Center of Nagasaki, Applied Technology Division, Omura, Nagasaki 856-0026 (Japan); Ensinger, W. [Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany)

    2015-12-15

    Highlights: • Nitrogen containing diamond-like carbon films were prepared by a plasma ignited by a high voltage. • Variation of preparation method (N{sub 2} implantation, N{sub 2} and C{sub 2}H{sub 4} co-deposition). • Maximum nitrogen content similar for co-deposition and implantation. • Electrical resistivity decreases for small nitrogen contents, increases again for higher contents. - Abstract: The addition of nitrogen to diamond-like carbon films affects properties such as the inner stress of the film, the conductivity, biocompatibility and wettability. The nitrogen content is limited, though, and the maximum concentration depends on the preparation method. Here, plasma immersion ion implantation was used for the deposition of the films, without the use of a separate plasma source, i.e. the plasma was generated by a high voltage applied to the samples. The plasma gas consisted of a mixture of C{sub 2}H{sub 4} and N{sub 2}, the substrates were silicon and glass. By changing the experimental parameters (high voltage, pulse length and repetition rate and gas flow ratio) layers with different N content were prepared. Additionally, some samples were prepared using a DC voltage. The nitrogen content and bonding was investigated with SIMS, AES, XPS, FTIR and Raman spectroscopy. Their influence on the electrical resistivity of the films was investigated. Depending on the preparation conditions different nitrogen contents were realized with maximum contents around 11 at.%. Those values were compared with the nitrogen concentration that can be achieved by implantation of nitrogen into a DLC film.

  15. Surface, electrical and mechanical modifications of PMMA after implantation with laser produced iron plasma ions

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Qazi Salman; Bashir, Shazia, E-mail: shaziabashir@gcu.edu.pk; Jalil, Sohail Abdul; Shabbir, Muhammad Kaif; Mahmood, Khaliq; Akram, Mahreen; Khalid, Ayesha; Yaseen, Nazish; Arshad, Atiqa

    2016-07-01

    Laser Produced Plasma (LPP) was employed as an ion source for the modifications in surface, electrical and mechanical properties of poly methyl (methacrylate) PMMA. For this purpose Nd:YAG laser (532 nm, 6 ns, 10 Hz) at a fluence of 12.7 J/cm{sup 2} was employed to generate Fe plasma. The fluence and energy measurements of laser produced Fe plasma ions were carried out by employing Thomson Parabola Technique in the presence of magnetic field strength of 0.5 T, using CR-39 as Solid State Nuclear Track Detector (SSNTD). It has been observed that ion fluence ejecting from ablated plasma was maximum at an angle of 5° with respect to the normal to the Fe target surface. PMMA substrates were irradiated with Fe ions of constant energy of 0.85 MeV at various ion fluences ranging from 3.8 × 10{sup 6} ions/cm{sup 2} to 1.8 × 10{sup 8} ions/cm{sup 2} controlled by varying laser pulses from 3000 to 7000. Optical microscope and Scanning Electron Microscope (SEM) were utilized for the analysis of surface features of irradiated PMMA. Results depicted the formation of chain scission, crosslinking, dendrites and star like structures. To explore the electrical behavior, four probe method was employed. The electrical conductivity of ion irradiated PMMA was increased with increasing ion fluence. The surface hardness was measured by shore D hardness tester and results showed the monotonous increment in surface hardness with increasing ion fluence. The increasing trend of surface hardness and electrical conductivity with increasing Fe ion fluence has been well correlated with the surface morphology of ion implanted PMMA. The temperature rise of PMMA surface due to Fe ion irradiation is evaluated analytically and comes out to be in the range of 1.72 × 10{sup 4} to 1.82 × 10{sup 4} K. The values of total Linear Energy Transfer (LET) or stopping power of 0.8 MeV Fe ions in PMMA is 61.8 eV/Å and their range is 1.34 μm evaluated by SRIM simulation.

  16. Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Page, Matthew R.; Theingi, San; Young, Matthew; Aguiar, Jeffery; Lee, Benjamin G.; Stradins, Paul

    2016-11-21

    We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam-line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures grown on n-Cz wafers with PH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by photoluminescence and SIMS depth profiles. Initial IBPC cell results are presented.

  17. Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Page, Matthew R.; Theingi, San; Aguiar, Jeffery; Lee, Benjamin G.; Stradins, Paul

    2016-12-01

    We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures (~100 nm thick) grown on n-Cz wafers with pH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by SIMS, photoluminescence, TEM, EELS, and post-metallization TLM to reveal micro- and macro-scopic structural, chemical and electrical information.

  18. PLASMA IMMERSION ION IMPLANTER FOR THE MODIFICATION OF INDUSTRIAL AEROSPACE COMPONENTS

    Institute of Scientific and Technical Information of China (English)

    TONG Hong-hui; CHEN Qin-chuan; HUO Yan-feng; WANG Ke; FENG Tan-min; MU Li-lan; ZHAO Jun; Paul K Chu

    2003-01-01

    A commercial plasma immersion ion implanter has been designed and constructed to enhance the surface properties of parts and components used in aerospace applications. The implanter consists of a vacuum chamber, pumping and gas inlet system, custom sample chuek, four sets of hot-filaments, three-filtered vacuum arc plasma sources, special high voltage modulator, as well as monitoring and control systems. Special attention has been paid to improve the uniformity of plasma in the chamber. The power modulator operates in both the pulse bunching and single pulse modes. The maximum pulse voltage output is 80kV, maximum pulse current is 60A, and repetition frequency is 50 ~ 500Hz. The target chuck has been specially designed for uniform implantation into multiple aerospace components with irregular geometries as well as effective sample cooling. An in situ temperature monitoring device comprising dual thermocouples has been developed. The instrument was installed in an aerospace company and has been operating reliably for a year. In addition to reporting some of the hardware innovations, data on the improvement of the lifetime of an aircraft hydraulic pump disk using a dual nitrogen treatment process [60 ~ 70kV & (1 - 6) × 1017 cm-2; 30 ~ 45kV & (1 - 4) × 1017cm-2] are presented. This treatment protocol has been adopted as a standard production procedure in the factory.

  19. Kinetics of post-treatment structural transformations of nitrogen plasma ion immersion implanted polystyrene

    Energy Technology Data Exchange (ETDEWEB)

    Kosobrodova, E., E-mail: elenak@physics.usyd.edu.au; Kondyurin, A.; McKenzie, D.R.; Bilek, M.M.M.

    2013-06-01

    The surface chemistry of a synthetic material in contact with a biological system has a strong influence on the adhesion of proteins to the surface of the material and requires careful consideration in biomedical applications. The structure of plasma immersion ion implantation (PIII) treated polymer and its surface free energy depend on the ion fluence delivered during the treatment and on the time after the PIII treatment. These dependences have been investigated using the example of nitrogen plasma implanted polystyrene (PS). Contact angle measurements, FTIR–ATR spectra and X-ray photoelectron (XPS) spectra were acquired as a function of ion fluence and time after treatment. The results showed a close relationship to the kinetics of free radicals that had been examined in a previous study. The kinetics of oxidation and surface free energy had two stages, one with a characteristic time of several hours and the other with a characteristic time of several days. The concentration of nitrogen-containing groups decreased with time after PIII treatment, partly, due to their release from the PS surface.

  20. Plasma immersion ion implantation of polyurethane shape memory polymer: Surface properties and protein immobilization

    Science.gov (United States)

    Cheng, Xinying; Kondyurin, Alexey; Bao, Shisan; Bilek, Marcela M. M.; Ye, Lin

    2017-09-01

    Polyurethane-type shape memory polymers (SMPU) are promising biomedical implant materials due to their ability to recover to a predetermined shape from a temporary shape induced by thermal activation close to human body temperature and their advantageous mechanical properties including large recovery strains and low recovery stresses. Plasma Immersion Ion Implantation (PIII) is a surface modification process using energetic ions that generates radicals in polymer surfaces leading to carbonisation and oxidation and the ability to covalently immobilise proteins without the need for wet chemistry. Here we show that PIII treatment of SMPU significantly enhances its bioactivity making SMPU suitable for applications in permanent implantable biomedical devices. Scanning Electron Microscopy (SEM), contact angle measurements, surface energy measurements, attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to characterise the PIII modified surface, including its after treatment aging kinetics and its capability to covalently immobilise protein directly from solution. The results show a substantial improvement in wettability and dramatic changes of surface chemical composition dependent on treatment duration, due to the generation of radicals and subsequent oxidation. The SMPU surface, PIII treated for 200s, achieved a saturated level of covalently immobilized protein indicating that a full monolayer coverage was achieved. We conclude that PIII is a promising and efficient surface modification method to enhance the biocompatibility of SMPU for use in medical applications that demand bioactivity for tissue integration and stability in vivo.

  1. Titanium and aluminium ions implanted by plasma on polyethylene; lones de titanio y aluminio implantados por plasma sobre polietileno

    Energy Technology Data Exchange (ETDEWEB)

    Cruz, G.J.; Olayo, M.G.; Lopez, R.; Granda, E.; Munoz, A.; Valencia, R. [ININ, 52750 La Marquesa, Estado de Mexico (Mexico); Morales, J. [UAM-I, Apdo. Postal 5534, Iztapalapa, D.F. (Mexico)]. e-mail: gcc@nuclear.inin.mx

    2007-07-01

    The ion implantation by plasma of titanium and aluminum on polyethylene thin films (PE) is presented. The results indicate that the polymers reacted firstly with the oxygen and/or nitrogen carrying gases, and later its received the metallic particles that formed thin films. The stainless steel and the titanium formed a single phase. The metallic layers grew in the interval of 1 to 2 nm/min, its are thin, but enough to change the hardness of the polymer that it is increased in more of 20 times. (Author)

  2. Tribological behavior of AISI302 austenitic stainless steel modified by elevated temperature nitrogen plasma immersion ion implantation

    Institute of Scientific and Technical Information of China (English)

    JIANG Shao-qun; MA Xin-xin; SUN Yue

    2004-01-01

    AISI302 stainless steel samples were modified by elevated temperature nitrogen plasma immersion ion implantation at temperature ranging from 330 ℃ to 450 ℃. The tribological behaviors of the implanted layers of the samples were investigated. The samples were characterized by Auger electron spectroscopy (AES), glancing angle X-ray diffraction (GXRD), and nanoindentation. The results show that the implantation temperature plays an important rule on the microstructure and surface properties of the implanted layers. The thickness of the modified layer implanted at 390 ℃ is about 9 μm. It is improved about two orders compared with that of the implanted at room temperature. The surface nanohardness and the wear resistance of elevated temperature implanted layers increase significantly, and the friction coefficient decreases obviously in comparison with the unimplanted one. These data suggests that the improvement results from the formation of new phases such as ε-(Fe, Cr, Ni)2+xN, or noncrystal phase.

  3. Research of the Effects of Electron Focused Electric Field upon an Enhanced Glow Discharge Plasma Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    LI Liu-he; WU Yong-qin; ZHANG Yan-hua; CAI Xun; CHU Paul K

    2004-01-01

    A new Enhanced Glow Discharge Plasma Ion Implantation methods are introduced, in which the plasma are produced by the self glow discharge excitated by high negative voltage bias. The electric field is designed to a electron focusing mode by using a small area hollow anode and a large area sample holder cathode. The pattern of equipotentials of the electric field are calculated through finite-element method. By using the special electron-focusing field, the self glow discharge are enhanced and provide denser ions to implanted into the substrate.

  4. Plasma-enhanced Chemical Vapordeposition SiO2 Film after Ion Implantation Induces Quantum Well Intermixing

    Institute of Scientific and Technical Information of China (English)

    PENG Jucun; WU Boying; CHEN Jie; ZHAO Jie; WANG Yongchen

    2006-01-01

    A method of QWI ( quantum well intermixing) realizing through plasma-enhanced chemical vapordepositiom (PECVD) SiO2 film following ion implantation was investigated. PECVD 200 nm SiO2 film after 160 keV phosphorus(P) ion implantation was performed to induce InP-based multiple-quantum-well (MQW) laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N2 flue, the blue shift ofphotoluminescence (PL) peak related to implanted dose: 1 × 1011 , 1 × 1012, 1 × 1013 ,3 × 1013 , 7 × 1013 ion/ cm2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However , SiO2 film also may promote the quantum well intermixing.

  5. Diamondlike carbon deposition on plastic films by plasma source ion implantation

    CERN Document Server

    Tanaka, T; Shinohara, M; Takagi, T

    2002-01-01

    Application of pulsed high negative voltage (approx 10 mu s pulse width, 300-900 pulses per second) to a substrate is found to induce discharge, thereby increasing ion current with an inductively coupled plasma source. This plasma source ion beam implantation (PSII) technique is investigated for the pretreatment and deposition of diamond-like carbon (DLC) thin layer on polyethylene terepthalate (PET) film. Pretreatment of PET with N sub 2 and Ar plasma is expected to provide added barrier effects when coupled with DLC deposition, with possible application to fabrication of PET beverage bottles. PSII treatment using N sub 2 and Ar in separate stages is found to change the color of the PET film, effectively increasing near-ultraviolet absorption. The effects of this pretreatment on the chemical bonding of C, H, and O are examined by x-ray photoelectron spectroscopy (XPS). DLC thin film was successfully deposited on the PET film. The surface of the DLC thin layer is observed to be smooth by scanning electron mic...

  6. Low-energy plasma immersion ion implantation to induce DNA transfer into bacterial E. coli

    Energy Technology Data Exchange (ETDEWEB)

    Sangwijit, K. [Biotechnology Unit, University of Phayao, Muang, Phayao 56000 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Sarapirom, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Bang Khen, Chiang Mai 50290 (Thailand); Pitakrattananukool, S. [School of Science, University of Phayao, Muang, Phayao 56000 (Thailand); Anuntalabhochai, S. [Biotechnology Unit, University of Phayao, Muang, Phayao 56000 (Thailand)

    2015-12-15

    Plasma immersion ion implantation (PIII) at low energy was for the first time applied as a novel biotechnology to induce DNA transfer into bacterial cells. Argon or nitrogen PIII at low bias voltages of 2.5, 5 and 10 kV and fluences ranging from 1 × 10{sup 12} to 1 × 10{sup 17} ions/cm{sup 2} treated cells of Escherichia coli (E. coli). Subsequently, DNA transfer was operated by mixing the PIII-treated cells with DNA. Successes in PIII-induced DNA transfer were demonstrated by marker gene expressions. The induction of DNA transfer was ion-energy, fluence and DNA-size dependent. The DNA transferred in the cells was confirmed functioning. Mechanisms of the PIII-induced DNA transfer were investigated and discussed in terms of the E. coli cell envelope anatomy. Compared with conventional ion-beam-induced DNA transfer, PIII-induced DNA transfer was simpler with lower cost but higher efficiency.

  7. Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Peralvarez, M; Carreras, Josep; Navarro-Urrios, D; Lebour, Y; Garrido, B [MIND, IN2UB, Department of Electronics, University of Barcelona, C/Marti i Franques 1, PL2, E-08028 Barcelona (Spain); Barreto, J; DomInguez, C [IMB-CNM, CSIC, Bellaterra, E-08193 Barcelona (Spain); Morales, A, E-mail: mperalvarez@el.ub.e [INAOE, Electronics Department, Apartado 51, Puebla 72000 (Mexico)

    2009-10-07

    An in-depth study of the physical and electrical properties of Si-nanocrystal-based MOSLEDs is presented. The active layers were fabricated with different concentrations of Si by both ion implantation and plasma-enhanced chemical vapour deposition. Devices fabricated by ion implantation exhibit a combination of direct current and field-effect luminescence under a bipolar pulsed excitation. The onset of the emission decreases with the Si excess from 6 to 3 V. The direct current emission is attributed to impact ionization and is associated with the reasonably high current levels observed in current-voltage measurements. This behaviour is in good agreement with transmission electron microscopy images that revealed a continuous and uniform Si nanocrystal distribution. The emission power efficiency is relatively low, {approx}10{sup -3}%, and the emission intensity exhibits fast degradation rates, as revealed from accelerated ageing experiments. Devices fabricated by chemical deposition only exhibit field-effect luminescence, whose onset decreases with the Si excess from 20 to 6 V. The absence of the continuous emission is explained by the observation of a 5 nm region free of nanocrystals, which strongly reduces the direct current through the gate. The main benefit of having this nanocrystal-free region is that tunnelling current flow assisted by nanocrystals is blocked by the SiO{sub 2} stack so that power consumption is strongly reduced, which in return increases the device power efficiency up to 0.1%. In addition, the accelerated ageing studies reveal a 50% degradation rate reduction as compared to implanted structures.

  8. Nitrocarburizing of AISI-304 stainless steel using high-voltage plasma immersion ion implantation

    Science.gov (United States)

    Abd El-Rahman, A. M.; Mohamed, S. H.; Ahmed, M. R.; Richter, E.; Prokert, F.

    2009-05-01

    AISI-304 austenitic stainless steel has been nitrocarburized in N 2 and C 2H 2 ambient using high-voltage plasma immersion ion implantation (PIII) technology. The use of different PIII treatment times revealed important hints with respect to the microstructural, mechanical and corrosion properties of the nitrocarburized layer. Grazing incidence X-ray diffraction (GIXRD) shows the presence of nitride ( γN and CrN) and carbide ( γC and Fe 3C) phases. Glow discharge optical spectroscopy (GDOS) has been used to characterize the elemental depth profiles in which the thickness of the modified layers is derived. Dynamic microindentation method is used for the study of mechanical performance of the nitrocarburized layer as well as the untreated material. The microhardness has been increased to a maximum value of more than nine times compared to that of the untreated one. The corrosion performance is characterized by potentiodynamic polarization technique and was found to be treatment time dependent.

  9. Surface Modification by Nitrogen Plasma Immersion Ion Implantation on Austenitic AISI 304 Stainless Steel

    Institute of Scientific and Technical Information of China (English)

    Miguel CASTRO-COLIN; William DURRER; Jorge ALPEZ; Enrique RAMIREZ-HOMS

    2016-01-01

    Surfaces of AISI 304 austenitic stainless steel plates nitrided by plasma immersion ion implantation (PIII) technology were studied by means of Auger electron spectroscopy (AES)and X-ray photoelectron spectroscopy (XPS)to determine the effect of the nitriding process on the surface and subjacent layers.Elemental compositions obtained by AES and XPS at varying depths indicate that the saturation of N is relatively constant as a function of depth,indicating the reliability of PIII technology for subsurface saturation.It is concluded that the concentrations of both Cr and O increase with depth,the subjacent oxide is driven by the Ar+ sputtering process used to access the lower layers,and then N is bound to Cr.

  10. Plasma immersion ion implantation and deposition of DLC coating for modification of orthodontic magnets

    Energy Technology Data Exchange (ETDEWEB)

    Wongsarat, W. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sarapirom, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); National Metal and Materials Technology Center, 114 Thailand Science Park, Paholyothin Road, Klong 1, Klong Luang, Pathumthani, Bangkok 12120 (Thailand); Aukkaravittayapun, S. [National Metal and Materials Technology Center, 114 Thailand Science Park, Paholyothin Road, Klong 1, Klong Luang, Pathumthani, Bangkok 12120 (Thailand); Jotikasthira, D. [Department of Odontology-Oral Pathology, Faculty of Dentistry, Chiang Mai University, Chiang Mai 50200 (Thailand); Boonyawan, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2012-02-01

    This study was aimed to use the plasma immersion ion implantation and deposition (PIII-D) technique to form diamond-like carbon (DLC) thin films on orthodontic magnets to solve the corrosion problem. To search for the optimal material modification effect, PIII-D conditions including gases, processing time, and pulsing mode were varied. The formation of DLC films was confirmed and characterized with Raman spectra. The intensity of the remnant magnetic field of the magnets and the hardness, adhesion and thickness of the thin films were then measured. A corrosion test was carried out using clinic dental fluid. Improved benefits including a satisfying hardness, adhesion, remnant magnetic strength and corrosion resistance of the DLC coating could be achieved by using a higher interrupting time ratio and shorter processing time.

  11. Composition and Structure of Ti-6Al-4V Alloy Plasma-based Ion Implanted with Nitrogen

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The composition and structure of Ti-6Al-4V alloy plasma-based ion implanted with nitrogen was investigated.The nitrogen depth distribution shows more antiballistic with distribution peak heightened with increased implantation time(dose),and more like a parabola at the low implantation pulse voltage.When implantation pulse voltage is increased,the implantation depth increased with the nitrogen distribution peak being deepened,widened and lowered somewhat.TiN,TiN+Ti2N,or Ti2N second phases were formed in the implanted layer.The relative percentage of nitrogen content in the form of TiN increases when going deeper into the implanted(TiN formed) layer.The increase of implantation pulse width and/or time is favourable for the formation of TiN rather than Ti2N.It is unfavourable for formation of any nitrides when implantation pulse voltage is decreased to 30kV or less.Tiny crystalline particles (made mainly of Ti2N and a smaller percentage of TiO2 phases) of regular shapes such as triangle and tetragon,etc.(about 20 nm) are found distrbuted dispersively in the near surface region of samples implanted at the high implantation pulse voltage (75kV).

  12. Preparation of plastic and biopolymer multilayer films by plasma source ion implantation.

    Science.gov (United States)

    Shin, Gye Hwa; Lee, Yeon Hee; Lee, Jin Sil; Kim, Young Soo; Choi, Won Seok; Park, Hyun Jin

    2002-07-31

    The plasma source ion implantation (PSII) technique was used to improve the adhesion between linear low-density polyethylene (LLDPE) and biopolymer. LLDPE was treated with the PSII using O(2) or CF(4) gas to modify its surface. After modification, chitosan or corn zein was used for coating on LLDPE. Wettability of the LLDPE surface was evaluated with a contact angle meter by the sessile drop method. X-ray photoelectron spectroscopy (XPS) was used to analyze the LLDPE surface. Before and after treatment, in the case of LLDPE treated with O(2) PSII, oxygen-containing functional groups were formed on the implanted surface. In the CF(4) PSII treated LLDPE, it was observed that the fluorine concentration on the surface of LLDPE remarkably increased and hydrophobic groups were formed by chemical reaction. Bilayer films coated with chitosan or corn zein showed 10 times lower oxygen permeability. Tensile strength of multilayer films was decreased a little compared with that of LLDPE. The plastic and biopolymer multilayer films have potential for food packaging application because of their O(2) gas barrier property and easy recyclability of the multilayer film.

  13. Temperature elevated N ion implantation of Ti6Al4V alloys using the plasma source

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Specimens of Ti6Al4V alloy were implanted with nitrogen ions of 4× 1018 cm-2 at temperatures from 100 to 600℃. Auger Electron Spectroscopy (AES), microhardness measurements and pin-on-disk wear testing, Scanning Electron Mi croscopy (SEM), and Glancing angle X-ray Diffraction (XRD) were utilized to evaluate the surface property improvements. The thickness of implanted layers increased by about an order of magnitude when the temperature was elevated from 100 to 600℃. Higher surface hardness and wear resistance were also obtained in the high tempera ture implantation. The XRD image showed the presence of nitrides of titanium at the implanted surface.

  14. Surface modification of stainless steel by plasma-based fluorine and silver dual ion implantation and deposition.

    Science.gov (United States)

    Shinonaga, Yukari; Arita, Kenji

    2009-11-01

    The aims of this study were to modify dental device surface with fluorine and silver and to examine the effectiveness of this new surface modification method. Stainless steel plates were modified by plasma-based fluorine and silver ion implantation-deposition method. The surface characteristics and brushing abrasion resistance were evaluated by XPS, contact angle and brushing abrasion test. XPS spectra of modified specimens showed the peaks of fluoride and silver. These peaks were detected even after brushing abrasion test. Water contact angle significantly increased due to implantation-deposition of both fluorine and silver ions. Moreover, the contact angle of the modified specimen was significantly higher than that of fluorine only deposited specimen with the same number of brushing strokes. This study indicates that this new surface modification method of fluorine and silver ion implantation-deposition improved the brushing abrasion resistance and hydrophobic property making it a potential antimicrobial device.

  15. Structure and tribological performance by nitrogen and oxygen plasma based ion implantation on Ti6Al4V alloy

    Science.gov (United States)

    Feng, Xingguo; Sun, Mingren; Ma, Xinxin; Tang, Guangze

    2011-09-01

    Ti6Al4V alloy was implanted with nitrogen-oxygen mixture by using plasma based ion implantation (PBII) at pulsed voltage -10, -30 and -50 kV. The implantation was up to 6 × 1017 ions/cm2 fluence. The changes in chemical composition, structure and hardness of the modified surfaces were studied by XPS and nanoindentation measurements. According to XPS, it was found that the modified layer was predominantly TiO2, but contained small amounts of TiO, Ti2O3, TiN and Al2O3 between the outmost layer and metallic substrate. Surface hardness and wear resistance of the samples increased significantly after PBII treatment, the wear rate of the sample implanted N2-O2 mixture at -50 kV decreased eight times than the untreated one. The sample implanted N2-O2 mixture showed better wear resistance than that of the sample only implanted oxygen at - 50 kV. The wear mechanism of untreated sample was abrasive-dominated and adhesive, and the wear scar of the sample implanted at -50 kV was characterized by abrasive wear-type ploughing.

  16. Two-dimensional temperature distribution inside a hemispherical bowl-shaped target for plasma source ion implantation

    Institute of Scientific and Technical Information of China (English)

    刘成森; 王艳辉; 王德真

    2005-01-01

    One important parameter for the plasma source ion implantation (PSII) process is the target temperature obtained during the surface modification. Because the power input to the target being implanted can be large, its temperature is quite high. The target temperature prediction is useful, whether the high temperature is required in the experiment.In addition, there is likely to be temperature variation across the target surface, which can lead to locally different surface properties. In this paper, we have presented a model to predict and explain the temperature distribution on a hemispherical bowl-shaped vessel during plasma source ion implantation. A two-dimensional fluid model to derive both the ion flux to the target and the energy imparted to the substrate by the ions in the plasma sheath simulation is employed. The calculated energy input and radiative heat loss are used to predict the temperature rise and variation inside the sample in the thermal model. The shape factor of the target for radiation is taken into account in the radiative energy loss. The influence of the pulse duration and the pulsing frequency on the temperature distribution is investigated in detail. Our work shows that at high pulsing frequencies the temperature of the bowl will no longer rise with the increase of the pulsing frequency.

  17. Nitrocarburizing of AISI-304 stainless steel using high-voltage plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Abd El-Rahman, A.M. [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt)], E-mail: ahmedphys96@hotmail.com; Mohamed, S.H.; Ahmed, M.R. [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); Richter, E.; Prokert, F. [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden Rossendorf (Germany)

    2009-05-15

    AISI-304 austenitic stainless steel has been nitrocarburized in N{sub 2} and C{sub 2}H{sub 2} ambient using high-voltage plasma immersion ion implantation (PIII) technology. The use of different PIII treatment times revealed important hints with respect to the microstructural, mechanical and corrosion properties of the nitrocarburized layer. Grazing incidence X-ray diffraction (GIXRD) shows the presence of nitride ({gamma}{sub N} and CrN) and carbide ({gamma}{sub C} and Fe{sub 3}C) phases. Glow discharge optical spectroscopy (GDOS) has been used to characterize the elemental depth profiles in which the thickness of the modified layers is derived. Dynamic microindentation method is used for the study of mechanical performance of the nitrocarburized layer as well as the untreated material. The microhardness has been increased to a maximum value of more than nine times compared to that of the untreated one. The corrosion performance is characterized by potentiodynamic polarization technique and was found to be treatment time dependent.

  18. Growth of surface structures correlated with structural and mechanical modifications of brass by laser-induced Si plasma ions implantation

    Science.gov (United States)

    Ahmad, Shahbaz; Bashir, Shazia; Rafique, M. Shahid; Yousaf, Daniel

    2017-04-01

    Laser-produced Si plasma is employed as an ion source for implantation on the brass substrate for its surface, structural, and mechanical modifications. Thomson parabola technique is employed for the measurement of energy and flux of Si ions using CR-39. In response to stepwise increase in number of laser pulses from 3000 to 12000, four brass substrates were implanted by laser-induced Si plasma ions of energy 290 keV at different fluxes ranging from 45 × 1012 to 75 × 1015 ions/cm2. SEM analysis reveals the formation of nano/micro-sized irregular shaped cavities and pores for the various ion fluxes for varying numbers of laser pulses from 3000 to 9000. At the maximum ion flux for 12,000 pulses, distinct and organized grains with hexagonal and irregular shaped morphology are revealed. X-ray diffractometer (XRD) analysis exhibits that a new phase of CuSi (311) is identified which confirms the implantation of Si ions in brass substrate. A significant decrease in mechanical properties of implanted brass, such as Yield Stress (YS), Ultimate Tensile Strength (UTS), and hardness, with increasing laser pulses from 3000 to 6000 is observed. However, with increasing laser pulses from 9000 to a maximum value of 12,000, an increase in mechanical properties like hardness, YS, and UTS is observed. The generation as well as annihilation of defects, recrystallization, and intermixing of Si precipitates with brass matrix is considered to be responsible for variations in surface, structural, and mechanical modifications of brass.

  19. Ion implantation technology

    CERN Document Server

    Downey, DF; Jones, KS; Ryding, G

    1993-01-01

    Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approach

  20. The influence of repetitively pulsed plasma immersion low energy ion implantation on TiN coating formation and properties

    Science.gov (United States)

    Sivin, D. O.; Ananin, P. S.; Dektyarev, S. V.; Ryabchikov, A. I.; Shevelev, A. E.

    2017-05-01

    Application of high frequency short pulse plasma immersion low energy ion implantation for titanium nitride coating deposition using vacuum arc metal plasma and hot-cathode gas-discharge plasma on R6M5 alloy was investigated. Implementation of negative repetitively pulsed bias with bias amplitude 2 kV, pulse duration 5 μs and pulse frequency 105 Hz leads to 6.2-fold decrease of vacuum arc macroparticle surface density for macroparticles with diameter less than 0.5 μm. Ion sputtering due coating deposition reduces the production rate approximately by 30%. It was found that with bias amplitude range from 1.1 to 1.4 kV and pulse duration 5 μs yields to formation of coatings with local hardness up to 40 GPa. This paper presents the results of experimental studies of adhesion strength, tribological properties and surface morphology of deposited TiN coatings.

  1. Surface modification of NiTi by plasma based ion implantation for application in harsh environments

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, R.M., E-mail: rogerio@plasma.inpe.br [Instituto Nacional de Pesquisas Espaciais (INPE), S. J. Campos, SP (Brazil); Fernandes, B.B.; Carreri, F.C.; Goncalves, J.A.N.; Ueda, M.; Silva, M.M.N.F. [Instituto Nacional de Pesquisas Espaciais (INPE), S. J. Campos, SP (Brazil); Silva, M.M. [Instituto Tecnologico de Aeronautica (ITA), S. J. Campos, SP (Brazil); Pichon, L. [Laboratoire de Metallurgie Physique, University of Poitiers, Poitiers (France); Camargo, E.N.; Otubo, J. [Instituto Tecnologico de Aeronautica (ITA), S. J. Campos, SP (Brazil)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer New nitrogen PBII set up was used to treat samples of NiTi in moderate temperature of 450 Degree-Sign C. Black-Right-Pointing-Pointer A very rich nitrogen atomic concentration was achieved on the top surface. Black-Right-Pointing-Pointer Nitrogen diffused at least for 11 {mu}m depth. Black-Right-Pointing-Pointer Improved tribological and corrosion properties were achieved. Black-Right-Pointing-Pointer A concentration dependent diffusion coefficient was calculated. - Abstract: The substitution of conventional components for NiTi in distinct devices such as actuators, valves, connectors, stents, orthodontic arc-wires, e.g., usually demands some kind of treatment to be performed on the surface of the alloy. A typical case is of biomaterials made of NiTi, in which the main drawback is the Ni out-diffusion, an issue that has been satisfactorily addressed by plasma based ion implantation (PBII). Even though PBII can tailor selective surface properties of diverse materials, usually, only thin modified layers are attained. When NiTi alloys are to be used in the harsh space environment, as is the case of devices designed to remotely release the solar panels and antenna arrays of satellites, e.g., superior mechanical and tribological properties are demanded. For this case the thickness of the modified layer must be larger than the one commonly achieved by conventional PBII. In this paper, new nitrogen PBII set up was used to treat samples of NiTi in moderate temperature of 450 Degree-Sign C, with negative voltage pulses of 7 kV/250 Hz/20 {mu}s, in a process lasting 1 h. A rich nitrogen atomic concentration of 85 at.% was achieved on the near surface and nitrogen diffused at least for 11 {mu}m depth. Tribological properties as well as corrosion resistance were evaluated.

  2. Pulse generator for bias materials in the plasma immerse ion implantation process; Generador de pulsos para polarizar materiales en el proceso de implantacion de iones inmersos en plasma

    Energy Technology Data Exchange (ETDEWEB)

    Lopez Callegas, Regulo; Valencia Alvarado, Raul; Munoz Castro, Arturo Eduardo; Godoy Cabrera, Oscar Gerardo [Instituto Nacional de Investigaciones Nucleares, Mexico D.F. (Mexico); Moreno Saavedra, Hilda; Gonzalez Colin, Mireya; Mariano Escamilla, Hector Fernando [Instituto Tecnologico de Toluca, Estado de Mexico (Mexico)

    2003-10-15

    The 0-10 kV pulse generator has been designed, with 100 {mu}s duration and 1-100 Hz frequencies ranges. The use of the pulse generator is in the plasma immersed ion implantation technique (P III). The process was realized in 304 austenitic stainless steel, the results were analyzed by: SEM, X-rays diffraction and hardness Vickers. The hardness was increased due to the efficiency of the pulse generator and P III process, the results obtained showed that the nitrogen inside the stainless steel was implanted and besides some nitrides was formed and therefore the hardness was increased. Also, the more adequate work pressure was determined to carry out the P III process. [Spanish] Se presenta el diseno de un generador de pulsos de alto voltaje con amplitudes controladas de hasta 10 kV, la duracion maxima de los pulsos es del orden de los 100 {mu}s y frecuencia de repeticion en el intervalo de 1-100 Hz. La aplicacion de este generador de pulsos es para el proceso de implantacion de iones en materiales inmersos en plasmas (PIII). Los analisis hechos a los aceros austeniticos cedula 304 mediante microscopia electronica de barrido, difraccion de rayos X y dureza Vickers, muestran la eficiencia obtenida con el generador de pulsos en el proceso PIII, debido a que en el acero inoxidable se presenta un incremento en el nitrogeno y conformacion de algunos nitruros, lo cual da lugar al incremento de la dureza. Asimismo, se determino la presion de trabajo mas adecuada para llevar a cabo el proceso PIII.

  3. Ion Implantation of Polymers

    DEFF Research Database (Denmark)

    Popok, Vladimir

    2012-01-01

    are discussed. Related to that, the effects of radiothermolysis, degassing and carbonisation are considered. Specificity of depth distributions of implanted into polymers impurities is analysed and the case of high-fluence implantation is emphasised. Within rather broad topic of ion bombardment, the focus...

  4. EFECT OF PLASMA IMMERSION ION IMPLANTATION TREATEMENT IN THE WEAR RESISTANCE OF Ti-6Al-4V ALLOY

    Directory of Open Access Journals (Sweden)

    Zepka, Susana

    2015-07-01

    Full Text Available The objective of this work was the evaluation of wear resistance of Ti-6Al-4V alloy after plasma immersion ion implantation (PIII in different immersion times. The goal of this process was the modification of surface properties of the alloy to obtain better tribology properties. In this process, atoms can be injected on the material´s surface changing the mechanical properties in the region near the surface independently of thermodynamics variables, as solubility and difusivity. The samples were submitted to 120 e 180 minutes of implantation at 250°C in the three samples for each condition. The wear analyses were made by pin-on-disk process, where the lost volumes and wear coefficients were compared in the samples. It was observed the decreasing of attrite coefficient and the lost volume of the material during wear test. The implanted sample by 180 minutes has showed the wear coefficient 35.12% lower in comparison of the sample without treatment, and 11.09% lower in comparison of implanted sample by 120 minutes. It can be observed that the sample implanted by 180 minutes showed lower wear coefficient.

  5. Dispersion and absorption of longitudinal electro-kinetic wave in ion-implanted GaN semiconductor plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Soni, Dilip [Government P G Madhav Science College, Ujjain (M P) (India); Sharma, Giriraj, E-mail: grsharma@gmail.com [SRJ Government Girls’ College, Neemuch (M P) (India); Saxena, Ajay [Government College, Garoth, Dist. Mandsaur (M P) (India); Jadhav, Akhilesh [Government J Yoganandam Chhattisgarh College, Raipur (C G) (India)

    2015-07-31

    An analytical study on propagation characteristics of longitudinal electro-kinetic (LEK) waves is presented. Based on multi-fluid model of plasma, we have derived a dispersion relation for LEK waves in colloid laden GaN semiconductor plasmas. It is assumed that ions are implanted to form colloids in the GaN sample. The colloids are continuously bombarded by the plasma particles and stick on them, but they acquire a net negative charge due to relatively higher mobility of electrons. It is found from the dispersion relation that the presence of charged colloids not only modifies the existing modes but also supports new novel modes of LEKWs. It is hoped that the study would enhance understanding on dispersion and absorption of LEKWs and help in singling out the appropriate configurations in which GaN crystal would be better suited for fabrication of microwave devices.

  6. Diamond-like carbon films synthesized on bearing steel surface by plasma immersion ion implantation and deposition

    Institute of Scientific and Technical Information of China (English)

    LIU Hong-xi; TANG Bao-yin; WANG Lang-ping; WANG Xiao-feng; YU Yong-hao; SUN Tao; HU Li-guo

    2004-01-01

    Diamond-like carbon (DLC) films were synthesized by plasma immersion ion implantation and deposition (PIIID) on 9Cr18 bearing steel surface. Influences of working gas pressure and pulse width of the bias voltage on properties of the thin film were investigated. The chemical compositions of the as-deposited films were characterized by Raman spectroscopy. The micro-hardness, friction and wear behavior, corrosion resistance of the samples were evaluated, respectively. Compared with uncoated substrates, micro-hardness results reveal that the maximum is increased by 88.7%. In addition, the friction coefficient decreases to about 0.1, and the corrosion resistance of treated coupons surface are improved significantly.

  7. Deposition of TiC film on titanium for abrasion resistant implant material by ion-enhanced triode plasma CVD

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Yuhe, E-mail: zyh1120@hotmail.co.jp [School of Stomatology, China Medical University, Shen Yang (China); Wang Wei; Jia Xingya [School of Stomatology, China Medical University, Shen Yang (China); Akasaka, Tsukasa [Department of Health Science, School of Dental Medicine Hokkaido University, Sapporo (Japan); Liao, Susan [School of Materials Science and Engineering, Nanyang Technological University (Singapore); Watari, Fumio [Department of Health Science, School of Dental Medicine Hokkaido University, Sapporo (Japan)

    2012-12-01

    Highlights: Black-Right-Pointing-Pointer Deposition of Titanium Carbide (TiC) layer on titanium (Ti) surface has been demonstrated by an ion-enhanced triode plasma chemical vapor deposition (CVD) method. Black-Right-Pointing-Pointer The Vickers hardness of surface carbide was more than 2000, which confirmed its high abrasion resistance. Black-Right-Pointing-Pointer Physical and mechanical properties of the deposited TiC film on Ti were investigated to examine its potential application as an abrasion resistant implant material. - Abstract: Deposition of titanium carbide (TiC) layer on titanium (Ti) surface has been demonstrated by an ion-enhanced triode plasma chemical vapor deposition (CVD) method using a TiCl{sub 4} + CH{sub 4} + H{sub 2} gas mixture. Physical and mechanical properties of the deposited TiC film on Ti were investigated to examine its potential application as an abrasion resistant implant material. X-ray diffraction (XRD) showed that the specimen was consisted of TiC and Ti. Carbide layer of about 6 {mu}m thickness was observed on the cross section of the specimen by scanning electron microscopy (SEM). The Vickers hardness of surface carbide was more than 2000, which confirmed its high abrasion resistance.

  8. Dynamics Study of Impact of Ion Acceleration in Conventional Ion Implantation Combined with Plasma Ion Implantation%一种新型复合加速离子注入动力学研究

    Institute of Scientific and Technical Information of China (English)

    朱宗涛; 巩春志; 汪志健; 田修波; 杨士勤; Ricky Fu

    2012-01-01

    提出了一种基于靶台(工件)二次加速的束线离子注入的新方法,基本原理是将传统束线离子注入和等离子体离子注入有效复合.采用二维Particle-in-cell (PIC)模型对这种注入方法进行了数值仿真研究.考察了靶台加负偏压情况下靶台表面空间电势、离子密度变化以及离子的运动状态的时空演化.统计分析了不同时刻离子注入剂量、注入能量和注入角度的 分布规律.结果表明:靶台施加偏压对束流离子起到了很好的二次加速效果,束线离子复合加速离子注入这种新方法理论上是切实可行的.同时发现在靶台附近空间电场的作用下,离子束会发生小角度偏转,由柱状形逐渐变成“喇叭口”形,靶台表面有效注入范围扩大.靶台表面注入剂量分布呈中心区域高边缘区域低的趋势.这种新方法有助于减缓电源硬件加工的难度,增加了工艺的灵活性.%Abstract A novel technique was developed to improve the conventional ion implantation. In the newly-developed technique,a negative pulsed voltage,with respect to the vacuum chamber,was applied to the target so as to re-accelerate the impinging ions;and the conventional ion implantation was combined with plasma ion implantation.The various influencing factors,including the time evolutions of the field distribution above the negatively biased target surfaces,ion density distribution and ion trajectories,were modeled and simulated with 2-D software package particle-in-cell. The distributions of the implantation dosage,energy and incident angle of the ions at different times were statistically evaluated. The simulated results show that the negative bias significantly accelerates the ion for a second time,and the technique has a sold theoretical basis. Besides,the field distribution,originated from the bias,slightly bends the ion beam in such a way that its cylindrical shape changes into a bell-like one,considerably increasing the

  9. Improving the corrosion resistance of nitinol by plasma-immersion ion implantation with silicon for biomedical applications

    Science.gov (United States)

    Abramova, P. V.; Korshunov, A. V.; Lotkov, A. I.; Kashin, O. A.; Borisov, D. P.

    2015-11-01

    Cyclic voltammetry and potentiostatic polarization have been applied to study electrochemical behavior and to determine corrosion resistance of nitinol, which surface was modified with silicon using plasma-immersion ion implantation, in 0.9 % NaCl solution and in artificial blood plasma. It was found out that continuous, and also homogeneous in composition thin Si-containing layers are resistant to corrosion damage at high positive potentials in artificial physiological solutions due to formation of stable passive films. Breakdown potential Eb of Si-modified NiTi depends on the character of silicon and Ni distribution at the alloy surface, Eb values amounted to 0.9-1.5 V (Ag/AgCl/KCl sat.) for the alloy samples with continuous Si-containing surface layers and with decreased Ni surface concentration.

  10. Plasma immersion ion implantation: A viable candidate for low cost purification of mc-Si by nanocavities?

    Energy Technology Data Exchange (ETDEWEB)

    Kouadri-boudjelthia, E.-A., E-mail: e.kouadri@cder.dz [Centre de Développement des Energies Renouvelables, CDER, 16340 Algiers (Algeria); Ntsoenzok, E. [Conditions Extrêmes et Matériaux: Haute Température et Irradiation (CEMHTI), CNRS UPR 3079, 3A Rue de la Férollerie, 45071 Orléans Cedex 2 (France); Benoit, R. [Centre de Recherche sur la Matière Divisée (CRMD), 1B rue de la Férollerie, 45071 Orléans Cedex 2 (France); Regula, G. [Aix-Marseille Université, CNRS, IM2NP, UMR 7334, 13397 Marseille (France); Etienne, H.; Michel, T. [Ion Beam Services (IBS), Rue G. Imbert Prolongée, F-13790 Peynier (France); Ashok, S. [Pennsylvania State University, 212 Earth and Engineering Science Building, University Park, PA 16802 (United States)

    2016-01-01

    Highlights: • The ability of the H implantation by PIII, to form cavities in mc-Si. • The difference between PIII and Classical implantation (multi and mono-energy). • The good trapping ability in real conditions (low impurities concentration). - Abstract: A low-cost purification technique was evaluated on multicrystalline silicon (mc-Si). It consists of an efficient impurity trapping process involving nanocavities created by plasma immersion ion implantation (PIII). The study consisted of assessing (i) the creation of nanocavities by PIII and (ii) their ability to trap impurities in real conditions (without intentional contamination). Square pieces of p-type mc-Si samples, having a surface of 4 cm{sup 2} were used. They were implanted with hydrogen by PIII at 20 kV with a fluence of 5 × 10{sup 16} cm{sup −2} and then annealed for 30 min, in the temperature range 673–1273 K. The evolution of shape, size and spatial distribution of nanocavities was studied by transmission electron microscopy and time of flight secondary ion mass spectrometry in order to check both the formation of cavities and to test their ability to getter impurities by either precipitation or chemisorption. Results reveal surprisingly that, despite the triangular as-implanted H profile, nanocavities can be created by H-PIII, evidently because of the multi-energetic and high flux implantation (about 8 × 10{sup 13} cm{sup −2} s{sup −1}, 40–80 times greater than in conventional implantation) and that they are able to trap various impurities, initially present in mc-Si, such as Fe, Cu and Ni (according to their Gibbs energy), competing with the many existing gettering sites available in mc-Si, such as Si-related precipitates (oxygen, carbon, nitrogen or metal silicides), dislocations and grain boundaries. The area containing the biggest cavities have the highest density of gettering sites, especially for Cu, which can be trapped either by chemisorption (since it has higher binding

  11. Preparation and Properties of Ag-Containing Diamond-Like Carbon Films by Magnetron Plasma Source Ion Implantation

    Directory of Open Access Journals (Sweden)

    K. Baba

    2012-01-01

    Full Text Available The doping effect of silver on the structure and properties of diamond-like carbon (DLC films was investigated. The samples were prepared by a process combining acetylene plasma source ion implantation (high-voltage pulses of −10 kV with reactive magnetron sputtering of an Ag disc. A mixture of two gases, argon, and acetylene was introduced into the discharge chamber as working gas for plasma formation. A negative high-voltage pulse was applied to the substrate holder, thus, accelerating ions towards the substrate. The chemical composition of the deposited films was modified by the respective gas flows and determined using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The silver concentration within the DLC films influenced the structure and the tribological properties. The surface roughness, as observed by scanning electron microscopy, increased with silver concentration. The film structure was characterized by Raman spectroscopy and X-ray diffractometry (XRD. The DLC films were mainly amorphous, containing crystalline silver, with the amount of silver depending on the process conditions. The tribological properties of the films were improved by the silver doping. The lowest friction coefficient of around 0.06 was derived at a low silver content.

  12. Ion implantation in polymers

    Science.gov (United States)

    Wintersgill, M. C.

    1984-02-01

    An introductory overview will be given of the effects of ion implantation on polymers, and certain areas will be examined in more detail. Radiation effects in general and ion implantation in particular, in the field of polymers, present a number of contrasts with those in ionic crystals, the most obvious difference being that the chemical effects of both the implanted species and the energy transfer to the host may profoundly change the nature of the target material. Common effects include crosslinking and scission of polymer chains, gas evolution, double bond formation and the formation of additional free radicals. Research has spanned the chemical processes involved, including polymerization reactions achievable only with the use of radiation, to applied research dealing both with the effects of radiation on polymers already in commercial use and the tailoring of new materials to specific applications. Polymers are commonly divided into two groups, in describing their behavior under irradiation. Group I includes materials which form crosslinks between molecules, whereas Group II materials tend to degrade. In basic research, interest has centered on Group I materials and of these polyethylene has been studied most intensively. Applied materials research has investigated a variety of polymers, particularly those used in cable insulation, and those utilized in ion beam lithography of etch masks. Currently there is also great interest in enhancing the conducting properties of polymers, and these uses would tend to involve the doping capabilities of ion implantation, rather than the energy deposition.

  13. Plasma immersion ion implantation on 15-5PH stainless steel: influence on fatigue strength and wear resistance

    Science.gov (United States)

    Bonora, R.; Cioffi, M. O. H.; Voorwald, H. J. C.

    2017-05-01

    Surface improvement in steels is of great interest for applications in industry. The aim of this investigation is to study the effect of nitrogen ion implantation on the axial fatigue strength and wear resistance of 15-5 PH stainless steel. It is well know that electroplated coatings, which are used to improve abrasive wear and corrosion properties, affects negatively the fatigue strength. It is also important to consider requirements to reduce the use of coated materials with electroplated chromium and cadmium, that produce waste, which is harmful to health and environment. The HVOF (High velocity oxygen fuel) process provides hardness, wear strength and higher fatigue resistance in comparison to electroplated chromium. Plasma immersion ion implantation has been used to enhance the hardness, wear, fatigue and corrosion properties of metals and alloys. In the present research the fatigue life increased twice for 15-5 PH three hours PIII treated in comparison to base material. From the abrasive wear tests a lower pin mass reduction was observed, associated to the superficial treatments. The improvement of fatigue and mechanical performance is attributed to a combination of nitrides phase structure and compressive residual stresses during the PIII treatment.

  14. Diffusion, trapping, and isotope exchange of plasma implanted deuterium in ion beam damaged tungsten

    Science.gov (United States)

    Barton, Joseph Lincoln

    Tritium accumulation in nuclear fusion reactor materials is a major concern for practical and safe fusion energy. This work examines hydrogen isotope exchange as a tritium removal technique, analyzes the effects of neutron damage using high energy copper ion beams, and introduces a diffusion coefficient that is a function of the concentration of trapped atoms. Tungsten samples were irradiated with high energy (0.5 - 5 MeV) copper ions for controlled levels of damage - 10-3 to 10-1 displacements per atom (dpa) - at room temperature. Samples were then exposed to deuterium plasma at constant temperature (˜ 380 K) to a high fluence of 1024 ions/m2, where retention is at is maximized (i.e. saturated). By then subsequently exposing these samples to fractions of this fluence with hydrogen plasma, isotope exchange rates were observed. The resulting deuterium still trapped in the tungsten is then measured post mortem. Nuclear reaction analysis (NRA) gives the depth resolved deuterium retention profile with the 3He(D,p) 4He reaction, and thermal desorption spectroscopy (TDS) gives the total amount of deuterium trapped in the tungsten by heating a sample in vacuum up to 1200 K and measuring the evaporated gas molecules with a residual gas analyzer. Isotope exchange data show that hydrogen atoms can displace trapped deuterium atoms efficiently only up to the first few microns, but does not affect the atoms trapped at greater depths. In ion damaged tungsten, measurements showed a significant increase in retention in the damage region proportional to dpa 0.66, which results in a significant spike in total retention, and isotope exchange in damaged samples is still ineffective at depths greater than a few microns. Thus, isotope exchange is not an affective tritium removal technique; however, these experiments have shown that trapping in material defects greatly affects diffusion. These experiments lead to a simplified diffusion model with defect densities as the only free

  15. P-type ZnO films by phosphorus doping using plasma immersion ion-implantation technique

    Science.gov (United States)

    Nagar, S.; Chakrabarti, S.

    2013-03-01

    ZnO has been a subject of intense research in the optoelectronics community owing to its wide bandgap (3.3eV) and large exciton binding energy (60meV). However, difficulty in doping it p-type posts a hindrance in fabricating ZnO-based devices. In order to make p-type ZnO films, phosphorus implantation, using plasma immersion ion-implantation technique (2kV, 900W, 10μs pulse width) for 30 seconds, was performed on ZnO thin film deposited by RF Magnetron Sputtering (Sample A). The implanted samples were subsequently rapid thermal annealed at 700°C and 1000°C (Samples B and C) in oxygen environment for 30 seconds. Low temperature (8K) photoluminescence spectra reveal dominant donor-bound exciton (D°X) peak at 3.36eV for samples A and B. However, for Sample B the peaks around 3.31eV and 3.22eV corresponding to the free electron-acceptor (FA) and donor to acceptor pair peaks (DAP) are also observed. A dominant peak around 3.35eV, corresponding to acceptor bound exciton (A°X) peak, is detected for Sample C along with the presence of FA and DAP peaks around 3.31eV and 3.22eV. Moreover, the deep level peak around 2.5eV is higher for Sample B which may be due to implantation and acceptor related defects. However, for Sample C, the deep level peaks are very weak compared to the near band edge peaks confirming that these peaks are mainly due to intrinsic defects and not related to acceptors. These results clearly show us a promising way to achieve p-type ZnO films using phosphorus doping.

  16. Formation of amorphous carbon on the surface of poly(ethylene terephthalate) by helium plasma based ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Toth, A., E-mail: totha@chemres.hu [Institute of Materials and Environmental Chemistry, Chemical Research Center, Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 17 (Hungary); Veres, M. [Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 49 (Hungary); Kereszturi, K.; Mohai, M.; Bertoti, I.; Szepvoelgyi, J. [Institute of Materials and Environmental Chemistry, Chemical Research Center, Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 17 (Hungary)

    2011-08-15

    The surface modification of poly(ethylene terephthalate) (PET) by helium plasma based ion implantation (He PBII) was studied. The effect of the main process parameters (acceleration voltage, fluence and fluence rate) on the alterations of the surface chemical composition and structure were investigated by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. According to SRIM calculations, at ion energies above 2 keV the stopping power of PET for He{sup +} ions is dominated by the electronic component and the contribution of the nuclear component is relatively small. Degradation of the ester group and carbonisation were observed by XPS due to elimination of O-rich fragments. The total C-content of the modified layer increased with the increase of fluence rate and acceleration voltage of particles, enabling the purposeful alteration of the surface composition. A strong broadening was detected in the Raman spectrum between 1000 and 1700 cm{sup -1}, testifying to the intense formation of amorphous carbon. The area ratio of the D ({approx}1410 cm{sup -1}) to G ({approx}1570 cm{sup -1}) band increased with the increase of particle fluence and the increase of acceleration voltage, offering the possibility of tailoring the chemical structure of the amorphous carbon layer created by the He PBII treatment.

  17. Model development of plasma implanted hydrogenic diffusion and trapping in ion beam damaged tungsten

    Science.gov (United States)

    Barton, J. L.; Wang, Y. Q.; Doerner, R. P.; Tynan, G. R.

    2016-10-01

    A Cu ion beam is used to induce controlled levels of damage (10-3, 10-2, and 10-1 dpa) in room temperature W samples. A single 5 MeV beam energy yielding a peaked damage profile 0.8 μm into the material, or three beam energies (0.5, 2, and 5 MeV) producing a relatively uniform damage profile from the near surface up to 0.8 μm were used. The W samples were then exposed to a D plasma ion fluence of 1024 ions m-2 at 380 K, and the resulting D retention was measured using the D(3He,p)4He reaction analysis (NRA) and thermal desorption spectroscopy (TDS). We observe that within experimental error there is no significant difference in retention whether the damage profile is peaked or uniform. The increase in retention is observed to increase proportional to \\text{dp}{{\\text{a}}0.66} estimated from the dpa peak calculated from the SRIM program. A simplified retention model is proposed that provides concentration profiles that can be directly compared to NRA data and total retention measurements. Taking the trapping energies due to three defect types calculated from density functional theory (DFT), the only free-parameters are three defect densities of in-grain monovacancies, dislocations, and grain boundary vacancies, and we assume these defects to be the dominant trapping locations. The model can fit D retention data in a pristine W sample within the experimental error of the measurements, and in subsequent modeling these intrinsic defect densities are then fixed. We model the retention profile after ion damage by adding the SRIM predicted vacancy profile to the intrinsic monovacancy defect density. Since the increase in retention, and therefore the increase in vacancy production, does not increase linearly with dpa, a correction factor is multiplied to the predicted vacancy profile to fit the data. A new diffusion coefficient is calculated with the model that is a function of the concentration of trapped atoms. This calculation may resolve discrepancies of various

  18. The microstructure of Si surface layers after plasma-immersion He+ ion implantation and subsequent thermal annealing1

    Science.gov (United States)

    Lomov, Andrey; Shcherbachev, Kirill; Chesnokov, Yurii

    2017-01-01

    The structural changes in the surface layer of p-type Cz-Si(001) samples after high-dose low-energy (2 keV) He+ plasma-immersion ion implantation and subsequent thermal annealing were studied using a set of complementary methods: high-resolution X-ray reflectometry, high-resolution X-ray diffraction, transmission electron microscopy and atomic force microscopy. The formation of a three-layer structure was observed (an amorphous a-SiOx layer at the surface, an amorphous a-Si layer and a heavily damaged tensile-strained crystalline c-Si layer), which remained after annealing. Helium-filled bubbles were observed in the as-implanted sample. The influence of annealing on the evolution of the three-layer structure and the bubbles is considered. The bubbles are shown to grow after annealing. Their characteristic size is determined to be in the range of 5–20 nm. Large helium-filled bubbles are located in the amorphous a-Si layer. Small bubbles form inside the damaged crystalline Si layer. These bubbles are a major source of tensile strain in the c-Si layer.

  19. Study rationale and protocol: prospective randomized comparison of metal ion concentrations in the patient's plasma after implantation of coated and uncoated total knee prostheses

    Directory of Open Access Journals (Sweden)

    Günther Klaus-Peter

    2009-10-01

    Full Text Available Abstract Background Any metal placed in a biological environment undergoes corrosion. Thus, with their large metallic surfaces, TKA implants are particularly prone to corrosion with subsequent release of metal ions into the human body which may cause local and systemic toxic effects and hypersensitivity reactions, and increase cancer risk. To address this problem, a new 7-layer zirconium coating developed especially for cobalt-chrome orthopaedic implants was tested biomechanically and found to lower metal ion release. The purpose of the proposed clinical trial is to compare the metal ion concentration in patients' plasma before and after implantation of a coated or uncoated TKA implant. Methods/Design In this randomised controlled trial, 120 patients undergoing primary TKA will be recruited at the Department of Orthopaedic Surgery of the University Hospital in Dresden, Germany, and randomised to either the coated or uncoated prosthesis. Outcome assessments will be conducted preoperatively and at 3 months, 12 months and 5 years postoperatively. The primary clinical endpoint will be the chromium ion concentration in the patient's plasma after 1 and 5 years. Secondary outcomes include cobalt, molybdenum and nickel ion concentrations after 1 and 5 years, allergy testing for hypersensitivity against one of these metals, the Knee Society Score to assess clinical and physical function of the knee joint, the self-assessment Oxford Score and the Short Form 36 quality of live questionnaire. Discussion The metal ion concentration in the patient's plasma has been shown to increase after TKA, its eventual adverse effects being widely debated. In the light of this discussion, ways to reduce metal ion release from orthopaedic implants should be studied in detail. The results of this investigation may lead to a new method to achieve this goal. Trials register Clinicaltrials registry NCT00862511

  20. Study rationale and protocol: prospective randomized comparison of metal ion concentrations in the patient's plasma after implantation of coated and uncoated total knee prostheses

    Science.gov (United States)

    Lützner, Jörg; Dinnebier, Gerd; Hartmann, Albrecht; Günther, Klaus-Peter; Kirschner, Stephan

    2009-01-01

    Background Any metal placed in a biological environment undergoes corrosion. Thus, with their large metallic surfaces, TKA implants are particularly prone to corrosion with subsequent release of metal ions into the human body which may cause local and systemic toxic effects and hypersensitivity reactions, and increase cancer risk. To address this problem, a new 7-layer zirconium coating developed especially for cobalt-chrome orthopaedic implants was tested biomechanically and found to lower metal ion release. The purpose of the proposed clinical trial is to compare the metal ion concentration in patients' plasma before and after implantation of a coated or uncoated TKA implant. Methods/Design In this randomised controlled trial, 120 patients undergoing primary TKA will be recruited at the Department of Orthopaedic Surgery of the University Hospital in Dresden, Germany, and randomised to either the coated or uncoated prosthesis. Outcome assessments will be conducted preoperatively and at 3 months, 12 months and 5 years postoperatively. The primary clinical endpoint will be the chromium ion concentration in the patient's plasma after 1 and 5 years. Secondary outcomes include cobalt, molybdenum and nickel ion concentrations after 1 and 5 years, allergy testing for hypersensitivity against one of these metals, the Knee Society Score to assess clinical and physical function of the knee joint, the self-assessment Oxford Score and the Short Form 36 quality of live questionnaire. Discussion The metal ion concentration in the patient's plasma has been shown to increase after TKA, its eventual adverse effects being widely debated. In the light of this discussion, ways to reduce metal ion release from orthopaedic implants should be studied in detail. The results of this investigation may lead to a new method to achieve this goal. Trials register Clinicaltrials registry NCT00862511 PMID:19828019

  1. Influence of temperature on properties of nitrogen plasma source ion implantation (N-PSII) of Ti6A14V alloy

    CERN Document Server

    Geng Man; Zhao Qing

    2001-01-01

    Specimens of Ti6Al4V alloy were implanted with nitrogen plasma source ion implantation (N-PSII) at temperatures between 100 degree C and 600 degree C to a ion dose of 4 x 10 sup 1 sup 7 cm sup - sup 2. Auger Electron Spectroscopy (AES) was used to determine the nitrogen concentration depth profiles. Microhardness measurements and pin-on-disk wear test were performed to evaluate the improvements of the surface modification. Glancing angle X-ray diffraction (XRD) was employed to determine the phases presented in the surface modified layer. The thickness of implanted layer increased by about an order of magnitude when the temperature was elevated from 100 degree C to 600 degree C. Higher surface hardness and wear resistance was also obtained at higher temperature. Scanning electron microscopy (SEM) showed distinct microstructural changes and the presence of titanium nitrides in the implanted surface

  2. Semiconductor Ion Implanters

    Science.gov (United States)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at 7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at 6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing `only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around 2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  3. [XPS characterization of TiN layer on bearing steel surface treated by plasma immersion ion implantation and deposition technique].

    Science.gov (United States)

    Liu, Hong-xi; Jiang, Ye-hua; Zhan, Zhao-lin; Tang, Bao-yin

    2009-09-01

    Titanium nitride (TIN) hard protective films were fabricated on AISI52100 bearing steel surface employing plasma immersion ion implantation and deposition (PIIID) technique. The TiN films were characterized using a variety of test methods. Atomic force microscope (AFM) revealed that the titanium nitride film has extremely smooth surface, very high uniformity and efficiency of space filling over large areas. X-ray diffraction (XRD) result indicated that (200) crystal face of titanium nitride phase is the preferred orientation and three kinds of titanium components exist in the surface modified layer. Tailor fitting analysis of X-ray photoelectron spectroscopy (XPS) combined with Ar ion etching proved that Ti2p(1/2) and Ti2p(3/2) have two peaks in the titanium nitride film layer, respectively. It is shown that different chemical state exists in titanium compound. N(1s) bond energy of XPS has also three fitting peaks at 396.51, 397. 22 and 399.01 eV, corresponding to the nitrogen atom in TiNxOy, TiN and N--N, respectively. Combined with the XPS Tailor fitting analysis results of O(1s) bond energy, it was shown that there is a large amount of titanium nitride phase in addition to a small amount of simple substance nitrogen and oxide of titanium in the surface layer. The whole film system is made up of TiN, TiO2, N--N and Ti--O--N compound.

  4. Evolution of arsenic in high fluence plasma immersion ion implanted silicon : Behavior of the as-implanted surface

    NARCIS (Netherlands)

    Vishwanath, V.; Demenev, E.; Giubertoni, D.; Vanzetti, L.; Koh, A. L.; Steinhauser, G.; Pepponi, G.; Bersani, M.; Meirer, F.; Foad, M. A.

    2015-01-01

    High fluence (>1015 ions/cm2) low-energy (3 + on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon

  5. Evolution of arsenic in high fluence plasma immersion ion implanted silicon : Behavior of the as-implanted surface

    NARCIS (Netherlands)

    Vishwanath, V.; Demenev, E.; Giubertoni, D.; Vanzetti, L.; Koh, A. L.; Steinhauser, G.; Pepponi, G.; Bersani, M.; Meirer, F.; Foad, M. A.

    2015-01-01

    High fluence (>1015 ions/cm2) low-energy (3 + on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon

  6. Influence of the residual oxygen in the plasma immersion ion implantation (PI3) processing of materials

    Energy Technology Data Exchange (ETDEWEB)

    Ueda, M., E-mail: ueda@plasma.inpe.br [Instituto Nacional de Pesquisas Espaciais, Sao Jose dos Campos, SP (Brazil); Silva, A.R.; Mello, Carina B. [Instituto Nacional de Pesquisas Espaciais, Sao Jose dos Campos, SP (Brazil); Silva, G. [Instituto Nacional de Pesquisas Espaciais, Sao Jose dos Campos, SP (Brazil); Instituto Tecnologico de Aeronautica, Sao Jose dos Campos, SP (Brazil); Reuther, H. [Institute of Ion Beam Physics and Materials Research, Forschungzentrum Dresden-Rossendorf, Dresden (Germany); Oliveira, V.S. [Instituto Nacional de Pesquisas Espaciais, Sao Jose dos Campos, SP (Brazil)

    2011-12-15

    In this work, we investigated the effects of the contaminants present in the vacuum chamber of the PI3 system, in particular, the residual oxygen, which results in the formation of the oxide compounds on the surface and hence is responsible for the high implantation energies required to achieve reasonably thick treated layers. We used a mass spectrometer (RGA) with a quadruple filter to verify the composition of the residual vacuum and pressure of the elements present in the chamber. Initially we found a high proportion of residual oxygen in a vacuum with a pressure of 1 Multiplication-Sign 10{sup -3} Pa. Minimizing the residual oxygen percentage in about 80%, by efficient cleaning of the chamber walls and by improving the gas feeding process, we mitigated the formation of oxides during the PI3 process. Therefore we achieved a highly efficient PI3 processing obtaining implanted layers reaching about 50 nm, even in cases such as an aluminum alloy, where is very difficult to nitrogen implant at low energies. We performed nitrogen PI3 treatment of SS304 and Al7075 using pulses of only 3 kV and 15 Multiplication-Sign 10{sup -6} s at 1 kHz with an operating pressure of 1 Pa.

  7. Photoelectrocatalytic properties of nitrogen doped TiO2/Ti photoelectrode prepared by plasma based ion implantation under visible light.

    Science.gov (United States)

    Han, Lei; Xin, Yanjun; Liu, Huiling; Ma, Xinxin; Tang, Guangze

    2010-03-15

    Nitrogen doped TiO(2)/Ti photoelectrodes were prepared by a sequence of anodization and plasma based ion implantation (PBII). The properties of this photoelectrode were characterized by scanning electronic microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectrometry (XPS), Ultra violet/visible light diffuse reflectance spectra (UV/vis/DRS), surface photovoltage (SPV), etc. Photoelectrocatalytic (PEC) performance of N-doped TiO(2)/Ti photoelectrode was tested under visible light irradiation. Their photocatalytic activity was evaluated by degradation of Rhodamine B (Rh.B). The results of XPS showed that nitrogen element was in form of three species, i.e. beta-N, molecular gamma-N and O-Ti-N, which existed in the lattices of TiO(2) and gaps between molecules. The results of UV/vis/DRS spectra and SPV revealed that proper doping of nitrogen could expand the response of photoelectrodes towards visible light and diminish the recombination of photo-generated holes and electrons, respectively. The photoelectrocatalytic activity of N-doped TiO(2)/Ti photoelectrodes was superior to those of undoped one under visible light region irradiation.

  8. Deposition of DLC Coating on Biomedical TiNi Alloys by Plasma Based Ion Implantation to Improve Surface Properties

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    Diamond-like carbon ( DLC ) -films were successfully deposited on Ti- 50.8at% Ni using plasma based ion implantation (PBII) technique. The influence of the pulsed negative bias voltage applied to the substrate from 12 kV to 40 kV on the microstructure, nano- indentation hardness and Young' s modulus, the surface characteristics and corrosion resistant property as well as hemocompatibility were investigated. The experimental results showed that C 1 s peak depended heavily on the bias voltage. With the increase of bias voltage , the ratio of sp2 / sp3 -first decreased, renching a minimum value at 20 kV, and then increased. The DLC coating deposited at20 kV showed the highest hardness and elastic modulus values as a result of lower sp2 / sp3 ratio. The RMS values first decreased from 7.202 nm( 12 kV) to 5.279 nm(20 kV), and then increased to 11.449 nm(30 kV) and7.060 nm(40 kV). The uncoated TiNi alloy showed severe pitting corrosion, due to the presence of Cl-ions in the solution. On the contrary, the DLC coated sample showed very little pitting corrosion and behaved better corrosion resistant property especially for the specimens deposited at 20 kV bias voltages. The platelet adhesion test show that the hemocompatibility of DLC coated TiNi alloy is much better than that of bare TiNi alloy, and the hemocompatibility performauce of DLC coated TiNi alloy deposited at 20 kV is superior to that of other coated specimens.

  9. Ion sources for ion implantation technology (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Sakai, Shigeki, E-mail: sakai-shigeki@nissin.co.jp; Hamamoto, Nariaki; Inouchi, Yutaka; Umisedo, Sei; Miyamoto, Naoki [Nissin Ion Equipment co., ltd, 575 Kuze-Tonoshiro-cho Minami-ku, Kyoto 601-8205 (Japan)

    2014-02-15

    Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important. On the other hand, to fabricate miniaturized devices, cluster ion implantation has been proposed to make shallow PN junction. While for power devices such as silicon carbide, aluminum ion is required. For doping processes of LCD fabrication, a large ion source is required. The extraction area is about 150 cm × 10 cm, and the beam uniformity is important as well as the total target beam current.

  10. Highly Stripped Ion Sources for MeV Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, Ady

    2009-06-30

    manufacturing industry by lowering power consumption by as much as 30 kW per ion implanter. Major problem was meeting commercialization goals did not succeed for the following reasons (which were discovered after R&D completion): record output of high charge state phosphorous would have thermally damage wafers; record high charge state of antimony requires tool (ion implanting machine in ion implantation jargon) modification, which did not make economic sense due to the small number of users. High fraction boron ion was delivered to PVI client Axcelis for retrofit and implantation testing; the source could have reduced beam preinjector power consumption by a factor of 3.5. But, since the source generated some lithium (though in miniscule amounts); last minute decision was made not to employ the source in implanters. An additional noteworthy reason for failure to commercialize is the fact that the ion implantation manufacturing industry had been in a very deep bust cycle. BNL, however, has benefited from advances in high-charge state ion generation, due to the need high charge state ions in some RHIC preinjectors. Since the invention of the transistor, the trend has been to miniaturize semiconductor devices. As semiconductors become smaller (and get miniaturized), ion energy needed for implantation decreases, since shallow implantation is desired. But, due to space charge (intra-ion repulsion) effects, forming and transporting ion beams becomes a rather difficult task. A few small manufacturers of low quality semiconductors use plasma immersion to circumvent the problem. However, in plasma immersion undesired plasma impurity ions are also implanted; hence, the quality of those semiconductors is poor. For high quality miniature semiconductor manufacturing, pure, low energy ion beams are utilized. But, low energy ion implanters are characterized by low current (much lower than desirable) and, therefore, low production rates. Consequently, increasing the current of pure low energy

  11. Development of a microwave ion source for ion implantations

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, N., E-mail: Nbk-Takahashi@shi.co.jp; Murata, H.; Kitami, H.; Mitsubori, H.; Sakuraba, J.; Soga, T.; Aoki, Y.; Katoh, T. [Technology Research Center, Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555 (Japan)

    2016-02-15

    A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P{sup +} beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within the chamber. The extracted P{sup +} beam current is more than 30 mA, at a 25 kV acceleration voltage, using PH{sub 3} gas.

  12. Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn0.85Mg0.15O thin films

    Science.gov (United States)

    Saha, S.; Nagar, S.; Chakrabarti, S.

    2014-08-01

    ZnMgO thin films deposited on Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of and peaks for all the samples. However, in case of the annealed samples, the peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton-exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton-exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices.

  13. Preparation of Ag-containing diamond-like carbon films on the interior surface of tubes by a combined method of plasma source ion implantation and DC sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hatada, R., E-mail: hatada@ca.tu-darmstadt.de [Technische Universität Darmstadt, Department of Materials Science, 64287 Darmstadt (Germany); Flege, S.; Bobrich, A.; Ensinger, W.; Dietz, C. [Technische Universität Darmstadt, Department of Materials Science, 64287 Darmstadt (Germany); Baba, K. [Industrial Technology Center of Nagasaki, Applied Technology Division, Omura, Nagasaki 856-0026 (Japan); Sawase, T.; Watamoto, T. [Nagasaki University, Department of Applied Prosthodontics, Nagasaki 852-8523 (Japan); Matsutani, T. [Technische Universität Darmstadt, Department of Materials Science, 64287 Darmstadt (Germany); Kinki University, Department of Electric and Electronic Engineering, Higashi-osaka 577-2332 (Japan)

    2014-08-15

    Highlights: • Deposition of Ag-containing diamond-like carbon films inside of tubes. • Combination of plasma source ion implantation and DC sputtering. • Antibacterial effect against S. aureus bacteria. - Abstract: Adhesive diamond-like carbon (DLC) films can be prepared by plasma source ion implantation (PSII), which is also suitable for the treatment of the inner surface of a tube. Incorporation of a metal into the DLC film provides a possibility to change the characteristics of the DLC film. One source for the metal is DC sputtering. In this study PSII and DC sputtering were combined to prepare DLC films containing low concentrations of Ag on the interior surfaces of stainless steel tubes. A DLC film was deposited using a C{sub 2}H{sub 4} plasma with the help of an auxiliary electrode inside of the tube. This electrode was then used as a target for the DC sputtering. A mixture of the gases Ar and C{sub 2}H{sub 4} was used to sputter the silver. By changing the gas flow ratios and process time, the resulting Ag content of the films could be varied. Sample characterizations were performed by X-ray photoelectron spectroscopy, secondary ion mass spectrometry, atomic force microscopy and Raman spectroscopy. Additionally, a ball-on-disk test was performed to investigate the tribological properties of the films. The antibacterial activity was determined using Staphylococcus aureus bacteria.

  14. Surface modification by nitrogen plasma immersion ion implantation into new steel 460Li–21Cr in a capacitively coupled radio frequency discharge

    Energy Technology Data Exchange (ETDEWEB)

    Bhuyan, H., E-mail: hbhuyan@fis.puc.cl [Institute of Physics, Pontificia Universidad Católica de Chile, Santiago (Chile); Mändl, S. [Leibniz-Institut für Oberflächenmodifizierung, Leipzig (Germany); Bora, B.; Favre, M.; Wyndham, E.; Maze, J.R. [Institute of Physics, Pontificia Universidad Católica de Chile, Santiago (Chile); Walczak, M. [Department of Mechanical and Metallurgical Engineering, Pontificia Universidad Católica de Chile, Santiago (Chile); Manova, D. [Leibniz-Institut für Oberflächenmodifizierung, Leipzig (Germany)

    2014-10-15

    Highlights: • Nitriding of a novel steel has been done in a RF plasma by PIII technique. • Improved hardness and wear behavior have been observed. • Hardness was improved by a factor 4 and the wear by 2 orders of magnitude. • Fast, anomalous diffusion, similar to nitrogen in expanded austenite is observed. - Abstract: A novel steel 460Li–21Cr belonging to a new generation of superferritic grade steel has been implanted with nitrogen in a low power 13.56 MHz radio frequency plasma by the plasma immersion ion implantation (PIII) technique in order to study its physical and chemical properties under different experimental conditions. We observed improved hardness and wear behavior of 460Li–21Cr steel with a layer thickness between 1.5 and 4.0 μm after 60 min implantation in the temperature range from 350 to 550 °C. The modified surface layer containing nitrogen does not show CrN in X-ray diffraction (XRD). Compared to untreated substrates, the hardness can be increased by a factor of 4, depending on the experimental conditions, and the wear behavior was also improved by two orders of magnitude. The results are very similar to those for austenitic stainless steel with a similar pronounced increase in wear resistance and plateau-like nitrogen depth profiles.

  15. Ion implanted dielectric elastomer circuits

    Science.gov (United States)

    O'Brien, Benjamin M.; Rosset, Samuel; Anderson, Iain A.; Shea, Herbert R.

    2013-06-01

    Starfish and octopuses control their infinite degree-of-freedom arms with panache—capabilities typical of nature where the distribution of reflex-like intelligence throughout soft muscular networks greatly outperforms anything hard, heavy, and man-made. Dielectric elastomer actuators show great promise for soft artificial muscle networks. One way to make them smart is with piezo-resistive Dielectric Elastomer Switches (DES) that can be combined with artificial muscles to create arbitrary digital logic circuits. Unfortunately there are currently no reliable materials or fabrication process. Thus devices typically fail within a few thousand cycles. As a first step in the search for better materials we present a preliminary exploration of piezo-resistors made with filtered cathodic vacuum arc metal ion implantation. DES were formed on polydimethylsiloxane silicone membranes out of ion implanted gold nano-clusters. We propose that there are four distinct regimes (high dose, above percolation, on percolation, low dose) in which gold ion implanted piezo-resistors can operate and present experimental results on implanted piezo-resistors switching high voltages as well as a simple artificial muscle inverter. While gold ion implanted DES are limited by high hysteresis and low sensitivity, they already show promise for a range of applications including hysteretic oscillators and soft generators. With improvements to implanter process control the promise of artificial muscle circuitry for soft smart actuator networks could become a reality.

  16. Physico-chemical and mechanical modifications of polyethylene and polypropylene by ion implantation, micro-wave plasma, electron beam radiation and gamma ray irradiation; Modifications physico-chimiques et mecaniques du polyethylene et du polypropylene par implantation ionique, plasma micro-ondes, bombardement d`electrons et irradiation gamma

    Energy Technology Data Exchange (ETDEWEB)

    Liao, J.D.

    1995-03-29

    A polyolefin surface becomes wettable when treated by micro-wave plasma or low-dose nitrogen ion implantation. A short time argon plasma treatment is sufficient to obtain polarizable peroxides on a polyolefin. X-ray photoelectron spectroscopy analyses, paramagnetic electronic resonance analyses, peroxides decomposition, wettability measurements and infrared active spectra analyses have shown that oxidized structures obtained from different treatment techniques play an important role in the interpretation of surface chemical properties of the polymer. Micro-wave plasma treatment, and in particular argon plasma treatment, yields more polarizable groups than ion implantation and is interesting for grafting. Hardness and elasticity modulus, measured by nano-indentation on a polyolefin, increase with an appropriate ion implantation dose. A 1.4 x 10{sup 17} ions.cm{sup -2} dose can multiply by 15 the hardness of high molecular weight polyethylene, and by 7 the elasticity modulus for a 30 nm depth. The viscous-plastic to quasi-elastic transition is shown. The thickness of the modified layer is over 300 nm. The study of friction between a metal sphere and a polyethylene cupula shows that ion implantation in the polymer creates a reticulated hard and elastic layer which improves its mechanical properties and reduces the erosion rate. Surface treatments on polymers used as biomaterials allow to adapt the surface properties to specific applications. 107 refs., 66 figs., 19 tabs., 4 annexes.

  17. Influence of surface modification of nitinol with silicon using plasma-immersion ion implantation on the alloy corrosion resistance in artificial physiological solutions

    Science.gov (United States)

    Kashin, O. A.; Borisov, D. P.; Lotkov, A. I.; Abramova, P. V.; Korshunov, A. V.

    2015-10-01

    Cyclic voltammetry and potentiostatic polarization have been applied to study electrochemical behavior and to determine corrosion resistance of nitinol, which surface was modified with silicon using plasma-immersion ion implantation, in 0.9% NaCl solution and in artificial blood plasma. It was found out that continuous, and also homogeneous in composition, thin Si-containing layers are resistant to corrosion damage at high positive potentials in artificial physiological solutions due to formation of stable passive films. Breakdown potential Eb of Si-modified NiTi depends on the character of silicon and Ni distribution at the alloy surface, Eb values amounted to 0.9-1.5 V (Ag/AgCl/KCl sat.) for the alloy samples with continuous Si-containing surface layers and with decreased Ni surface concentration.

  18. Ion implantation of superhard ceramic cutting tools

    Science.gov (United States)

    Chou, Y. Kevin; Liu, Jie

    2004-08-01

    Despite numerous reports of tool life increase by ion implantation in machining operations, ion implantation applications of cutting tools remain limited, especially for ceramic tools. Mechanisms of tool-life improvement by implantation are not clearly established due to complexity of both implantation and tool-wear processes. In an attempt to improve performance of cubic boron nitride (CBN) tools for hard machining by ion implantation, a literature survey of ion-implanted cutting tools was carried out with a focus on mechanisms of tool-wear reduction by ion implantation. Implantation and machining experiments were then conducted to investigate implantation effects on CBN tools in hard machining. A batch of CBN tools was implanted with nitrogen ions at 150 keV and 2.5×1017 ions/cm2 and further used to cut 61 HRc AISI 52100 steel at different conditions. Results show that ion implantation has strong effects on partsurface finish, moderate effect on cutting forces, but an insignificant impact on tool wear. Friction coefficients, estimated from measured cutting forces, are possibly reduced by ion implantation, which may improve surface finish. However, surprisingly, 2-D orthogonal cutting to evaluate tribological loading in hard machining showed no difference on contact stresses and friction coefficients between implanted and nonimplanted CBN tools.

  19. Structure and tribological properties of modified layer on 2024 aluminum alloy by plasma-based ion implantation with nitrogen/titanium/carbon

    Institute of Scientific and Technical Information of China (English)

    张玲召; 廖家轩; 夏立芳; 刘维民; 徐洮; 薛群基

    2003-01-01

    2024 aluminum alloy was implanted with nitrogen then titanium finally carbon by plasma-based ion implantatio to form a gradient layer.The structure and tribological properties of the layer were investigated.Its composition profiles and chemical states were analyzed with X-ray photoelectron spectroscopy(XPS).The surface carbonlayer was analyzed by Raman spectrum.The appearances were observed by atomic force microscope(AFM).Thesurface hardness was measured with the mechanical property microprobe.The dry wear tests against GCr15 steelball at various sliding loads were performed with a ball-on-disk wear tester in ambient environment.The resultsshow that the thickness of the modified layer is 1 200 nm,the carbon layer is a smooth and compact diamond-likecarbon(DLC)films,and the carbon-titanium interface is broadened due to carbon ions implantation,resulting in agood composition and structure transition between DLC films and titanium layer.Surface hardness is improvedmarkedly,with a slow and uniform change.Tribological properties are improved greatly although they reduce withthe increase of sliding loads because the modified layer becomes thin rapidly.

  20. Effect of Mo ion-implantation on the adhesion of diamond coatings

    CERN Document Server

    Yang Shie; Wang Xiao Ping; Li Hui; Ma Bing Xian; Qin Guang Yong; Zhang Bing Lin

    2002-01-01

    Diamond coatings were deposited on the cobalt-cemented tungsten carbide (YG6) substrates, which have been implanted with Mo ions, by microwave plasma CVD (MPCVD) method. The effect of ion-implantation on the adhesion of diamond coatings was studied. The results showed that the chemical compositions of cemented carbide substrate surfaces change obviously after Mo ion-implantation; and the adhesion strength between the CVD diamond coatings and the substrates implanted with Mo ions in proper concentration is improved remarkably

  1. Preparation of Metal-Containing Diamond-Like Carbon Films by Magnetron Sputtering and Plasma Source Ion Implantation and Their Properties

    Directory of Open Access Journals (Sweden)

    Stefan Flege

    2017-01-01

    Full Text Available Metal-containing diamond-like carbon (Me-DLC films were prepared by a combination of plasma source ion implantation (PSII and reactive magnetron sputtering. Two metals were used that differ in their tendency to form carbide and possess a different sputter yield, that is, Cu with a relatively high sputter yield and Ti with a comparatively low one. The DLC film preparation was based on the hydrocarbon gas ethylene (C2H4. The preparation technique is described and the parameters influencing the metal content within the film are discussed. Film properties that are changed by the metal addition, such as structure, electrical resistivity, and friction coefficient, were evaluated and compared with those of pure DLC films as well as with literature values for Me-DLC films prepared with a different hydrocarbon gas or containing other metals.

  2. Influence of albumin and inorganic ions on electrochemical corrosion behavior of plasma electrolytic oxidation coated magnesium for surgical implants

    Science.gov (United States)

    Wan, Peng; Lin, Xiao; Tan, LiLi; Li, Lugee; Li, WeiRong; Yang, Ke

    2013-10-01

    Magnesium and its alloys are of great interest for biodegradable metallic devices. However, the degradation behavior and mechanisms of magnesium treated with coating in physiological environment in the presence of organic compound such as albumin have not been elucidated. In this study, the plasma electrolytic oxidation coated magnesium immersed in four different simulated body fluids: NaCl, PBS and with the addition of albumin to investigate the influence of protein and inorganic ions on degradation behavior by electrochemical methods. The results of electrochemical tests showed that aggressive corrosion took place in 0.9 wt.% NaCl solution; whereas albumin can act as an inhibitor, its adsorption impeded further dissolution of the coating. The mechanism was attributed to the synergistic effect of protein adsorption and precipitation of insoluble salts.

  3. Preparation of Ag-containing diamond-like carbon films on the interior surface of tubes by a combined method of plasma source ion implantation and DC sputtering

    Science.gov (United States)

    Hatada, R.; Flege, S.; Bobrich, A.; Ensinger, W.; Dietz, C.; Baba, K.; Sawase, T.; Watamoto, T.; Matsutani, T.

    2014-08-01

    Adhesive diamond-like carbon (DLC) films can be prepared by plasma source ion implantation (PSII), which is also suitable for the treatment of the inner surface of a tube. Incorporation of a metal into the DLC film provides a possibility to change the characteristics of the DLC film. One source for the metal is DC sputtering. In this study PSII and DC sputtering were combined to prepare DLC films containing low concentrations of Ag on the interior surfaces of stainless steel tubes. A DLC film was deposited using a C2H4 plasma with the help of an auxiliary electrode inside of the tube. This electrode was then used as a target for the DC sputtering. A mixture of the gases Ar and C2H4 was used to sputter the silver. By changing the gas flow ratios and process time, the resulting Ag content of the films could be varied. Sample characterizations were performed by X-ray photoelectron spectroscopy, secondary ion mass spectrometry, atomic force microscopy and Raman spectroscopy. Additionally, a ball-on-disk test was performed to investigate the tribological properties of the films. The antibacterial activity was determined using Staphylococcus aureus bacteria.

  4. Ion Implantation and Synthesis of Materials

    CERN Document Server

    Nastasi, Michael

    2006-01-01

    Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

  5. Single ion implantation in semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Niepelt, Raphael; Johannes, Andreas; Gnauck, Martin; Slowik, Irma; Geburt, Sebastian; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet, Jena (Germany)

    2011-07-01

    Ion implantation is well established as a standard doping technique for semiconductor nanowires. The concentration of dopant atoms per area is typically determined by total beam current monitoring during the irradiation. However, at extremely low ion fluencies, it is not possible to distinguish the exact number of implanted ions in a nanometer sized structure, as the ions are distributed statistically over the irradiated area that is usually far wider than the nanostructure of interest. In our experiments we implanted electrically contacted semiconductor nanostructures that were connected to a preamplifier/amplifier setup. As with every impinging ion a certain amount of energy is deposited inside the material, one can detect signals directly induced by the ion implantation and the nanostructures themselves can act as a radiation sensor. This leads to a countable and very precisely adjustable ion dose during the implantation down to doping with single ions.

  6. Rolling contact fatigue life of ion-implanted GCr15

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Presents an experimental research into the rooling contact fatigue life of GCr15 steel with Tix N, TiX N + Ag and Tix N + DLC layers ion-implanted using the plasma ion-implantation technology on a ball-rod style high-speed con tact fatigue tester, and concludes with test results that the fatigue life increases to varying degrees with Tix N, Tix N + Ag, and Tix N + DLC layers implanted, and increases 1.8 times with Tix N + Ag layer implanted, hairline cracks grow continuously into fatigue pits under the action of shear stress in the superficial layer of material, and ion-implantation acts to prevent initiation of cracks and slow down propagation of cracks.

  7. Enhanced Physicochemical and Biological Properties of Ion-Implanted Titanium Using Electron Cyclotron Resonance Ion Sources

    Directory of Open Access Journals (Sweden)

    Csaba Hegedűs

    2016-01-01

    Full Text Available The surface properties of metallic implants play an important role in their clinical success. Improving upon the inherent shortcomings of Ti implants, such as poor bioactivity, is imperative for achieving clinical use. In this study, we have developed a Ti implant modified with Ca or dual Ca + Si ions on the surface using an electron cyclotron resonance ion source (ECRIS. The physicochemical and biological properties of ion-implanted Ti surfaces were analyzed using various analytical techniques, such as surface analyses, potentiodynamic polarization and cell culture. Experimental results indicated that a rough morphology was observed on the Ti substrate surface modified by ECRIS plasma ions. The in vitro electrochemical measurement results also indicated that the Ca + Si ion-implanted surface had a more beneficial and desired behavior than the pristine Ti substrate. Compared to the pristine Ti substrate, all ion-implanted samples had a lower hemolysis ratio. MG63 cells cultured on the high Ca and dual Ca + Si ion-implanted surfaces revealed significantly greater cell viability in comparison to the pristine Ti substrate. In conclusion, surface modification by electron cyclotron resonance Ca and Si ion sources could be an effective method for Ti implants.

  8. Three Filtered Vacuum Arc Plasma Sources Deposition & Implantation System

    Institute of Scientific and Technical Information of China (English)

    WU Xian-ying; ZHANG Hui-xing; LI Qiang

    2004-01-01

    A deposition & implantation system, which includes three filtered vacuum arc plasma sources, has been built. Vacuum arc discharge is used to produce high-density metal plasma; Curved magnetic filtering technique is used to transfer the plasma into out-of-sight vacuum chamber and reduce macro-particles from the vacuum arc plasma in order to drastically reduce the macro-particles contamination of the films. The up to 30 kV negative bias applied to the target can be used for ion implantation in order to improve the film adhesion; or for ion sputtering to clear the substrate surface. The 0 to 300 V negative bias can be used to adjust the ion energy which forming films. The system is designed for various thin films synthesizing, such as single-layer, compound layer, multi-layer films. It's principle, components and applications are described in the literature.

  9. Improving electric contacts by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Xu Shiru; Zhang Ying; Zheng Tiampi

    1989-01-01

    This article studies the improvement of electric contacts by ion implantation. 1 x 10/sup 17/ cm/sup -2/ of N/sup +/ and N/sub 2//sup +/ was implanted into two kinds of electric contacts, then a make-and-break test was made with the low voltage electrical apparatus. The weight loss of the contacts, temperature rise, contact resistance and transfer of material between the two contacts were measured. The contacts implanted by ions have improved electrical erosion properties.

  10. Surface modification of sapphire by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    McHargue, C.J.

    1998-11-01

    The range of microstructures and properties of sapphire (single crystalline Al{sub 2}O{sub 3}) that are produced by ion implantation are discussed with respect to the implantation parameters of ion species, fluence, irradiation temperature and the orientation of the ion beam relative to crystallographic axes. The microstructure of implanted sapphire may be crystalline with varying concentrations of defects or it may be amorphous perhaps with short-range order. At moderate to high fluences, implanted metallic ions often coalesce into pure metallic colloids and gas ions form bubbles. Many of the implanted microstructural features have been identified from studies using transmission electron microscopy (TEM), optical spectroscopy, Moessbauer spectroscopy, and Rutherford backscattering-channeling. The chemical, mechanical, and physical properties reflect the microstructures.

  11. Structure-property and composition-property relationships for poly(ethylene terephthalate) surfaces modified by helium plasma-based ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Toth, A., E-mail: totha@chemres.hu [Institute of Materials and Environmental Chemistry, Chemical Research Center, Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 17 (Hungary); Veres, M. [Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 49 (Hungary); Kereszturi, K.; Mohai, M.; Bertoti, I.; Szepvoelgyi, J. [Institute of Materials and Environmental Chemistry, Chemical Research Center, Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 17 (Hungary)

    2011-10-01

    The surfaces of untreated and helium plasma-based ion implantation (He PBII) treated poly(ethylene terephthalate) (PET) samples were characterised by reflectance colorimetry, contact angle studies and measurements of surface electrical resistance. The results were related to the structural and compositional data obtained by the authors earlier on parallel samples by XPS and Raman spectroscopy. Inverse correlations between lightness and I{sub D}/I{sub G} ratio and between chroma and I{sub D}/I{sub G} ratio were obtained, suggesting that the PBII-treated PET samples darken and their colourfulness decreases with the increase of the portion of aromatic sp{sup 2} carbon rings in the chemical structure of the modified layer. Direct correlation between water contact angle and the I{sub D}/I{sub G} ratio and inverse correlations between surface energy and I{sub D}/I{sub G} ratio and between dispersive component of surface energy and I{sub D}/I{sub G} ratio were found, reflecting that surface wettability, surface energy and its dispersive component decrease with the formation of surface structure, characterised again by enhanced portion of aromatic sp{sup 2} carbon rings. The surface electrical resistance decreased with the increase of the surface C-content determined by XPS and also with the increase of the surface concentration of conjugated double bonds, reflected by the increase of the {pi} {yields} {pi}* shake-up satellite of the C 1s peak.

  12. Ion implantation in crystalline and amorphous materials

    Science.gov (United States)

    Tasch, Al F.

    1998-05-01

    Ion implantation continues to be the selective doping technique of choice in silicon integrated circuit (IC) manufacturing, and its applications continue to grow in doping, damage gettering, and process simplification. However, in both technology and manufacturing equipment development there is a rapidly increasing need to understand in detail the dependence of implanted impurity profiles and implant-induced damage profiles in silicon on all key implant parameters. These reasons include largely reduced thermal budgets in IC processing, heavy emphasis on control of equipment and process costs, and the need for rigid manufacturing control. Towards this end, accurate, comprehensive, and computationally efficient models for ion implanted profiles (impurity and damage) in silicon are indispensable. These models greatly facilitate more timely technology development and implementation in manufacturing, improved manufacturing process control; and the development of new ion implantation tools can be executed more efficiently. This talk describes ion implant models and simulators developed in the ion implant modeling research/education project at the University of Texas at Austin. Physically based models for ion implantation into single-crystal Si have been developed for the commonly used implant species B, BF(2), As, P, and Si for the most commonly used implant energy ranges. These models have explicit dependence on the major implant parameters (energy, dose, tilt angle and rotation angle). In addition, the models have been extensively verified by the vast amount of experimental data which has been obtained in the experimental part of this project. The models have been extended down to ultra-low implant energies (model has been developed which accurately predicts as-implanted profiles for B and P up to at least 2.5 and 5 MeV, respectively. In addition, for energies below 200keV (the most commonly used energies), a rigorous physically based implant-induced damage model has

  13. Los Alamos National Laboratory Ion Implantation Program with General Motors and the University of Wisconsin

    Energy Technology Data Exchange (ETDEWEB)

    Sherwood, A. [Los Alamos National Lab., NM (United States)

    1993-12-01

    The Plasma Source Ion Implantation (PSII) collaboration is described. Its principal objective is to develop the PSII process, invented at the University of Wisconsin, on a large-scale for practical use in the automotive industry. The process achieves ion implantation for surface modification at higher implantation currents than conventional methods by biasing a target part immersed in a low temperature plasma to high negative voltage. Automotive applications being explored involve hardening of tool dies and automotive power train components.

  14. Spectroscopic studies of ion implanted PPV films

    Energy Technology Data Exchange (ETDEWEB)

    Moreau, C. (Cavendish Lab., Univ. of Cambridge (United Kingdom)); Friend, R.H. (Cavendish Lab., Univ. of Cambridge (United Kingdom)); Sarnecki, G.J. (Cavendish Lab., Univ. of Cambridge (United Kingdom)); Lucas, B. (LEPOFI, Faculte des Sciences, 87 - Limoges (France)); Moliton, A. (LEPOFI, Faculte des Sciences, 87 - Limoges (France)); Ratier, B. (LEPOFI, Faculte des Sciences, 87 - Limoges (France)); Belorgeot, C. (Lab. de Physique Moleculaire, Faculte des Sciences, 87 - Limoges (France))

    1993-03-15

    The main results of the spectroscopic analyses (infrared and ultraviolet - visible - near infrared) carried out on PPV films before and after ion implantation with halogen and alkali ions are presented in this paper. The influence of both ions nature and implantation parameters on optical properties of this polymer have been pointed out and the appearance of a weak band due to doping has been observed by infrared spectroscopy. (orig.)

  15. Formation of Nanoscale Intermetallic Phases in Ni Surface Layer at High Intensity Implantation of Al Ions

    Institute of Scientific and Technical Information of China (English)

    I.A.Bozhko; S.V.Fortuna; I.A.Kurzina; I.B.Stepanov; E.V.Kozlov; Yu.P. Sharkeev

    2004-01-01

    The results of experimental study of nanoscale intermetallic formation in surface layer of a metal target at ion implantation are presented. To increase the thickness of the ion implanted surface layer the high intensive ion implantation is used. Compared with the ordinary ion implantation, the high intensive ion implantation allows a much thicker modified surface layer. Pure polycrystalline nickel was chosen as a target. Nickel samples were irradiated with Al ions on the vacuum-arc ion beam and plasma flow source "Raduga-5". It was shown that at the high intensity ion implantation the fine dispersed particles of Ni3Al, NiAl intermetallic compounds and solid solution Al in Ni are formed in the nickel surface layer of 200 nm and thicker. The formation of phases takes place in complete correspondence with the Ni-Al phase diagram.

  16. Cell attachment on ion implanted titanium surface

    Directory of Open Access Journals (Sweden)

    P.S. Sreejith

    2008-12-01

    Full Text Available Purpose: Of outmost importance for the successful use of an implant is a good adhesion of the surrounding tissue to the biomaterial. In addition to the surface composition of the implant, the surface topography also influences the properties of the adherent cells. In the present investigation, ion implanted and untreated surfaces were compared for cell adhesion and spreading.Design/methodology/approach: The surface topography of the surfaces were analyzed using AFM and the cell studies with SEM.Findings: The results of our present investigation is indicative of the fact that ion implanted titanium surface offer better cell binding affinity compared to untreated/polished surface.Practical implications: Success of non-biodegradable implants will first and foremost depend on biocompatibility, followed by the capacity of the surface topography of the implants to evince desired cell matrix, surface cell matrix interactions. In the present study, the cell growth on ion implanted Ti material is analyzed and discussed.Originality/value: In this paper, we have utilized ion implantation technique, which will produce nano-texturing of the surface without producing any detrimental effects to both the dimensions and properties of the implants.

  17. Silicon technologies ion implantation and thermal treatment

    CERN Document Server

    Baudrant, Annie

    2013-01-01

    The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.

  18. Optimization of the ion implantation process

    Science.gov (United States)

    Maczka, D.; Latuszynski, A.; Kuduk, R.; Partyka, J.

    This work is devoted to the optimization of the ion implantation process in the implanter Unimas of the Institute of Physics, Maria Curie-Sklodowska University, Lublin. The results obtained during several years of operation allow us to determine the optimal work parameters of the device [1-3].

  19. Development of industrial ion implantation technology

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Byung Hoh; Jung, Kee Suk; Kim, Wan; Song, Woo Sub; Hwang, Chul Kyoo [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    1994-02-01

    We developed an ion implanter fitted for the treatment of 12 inch or larger wafers to make 256 or higher Mega D-Ram wafers. Design features are dual usage of gas/solid for the ion source loading, production of multi-balanced ions, and the possible oxygen ion implantation. BOSII program was used for the ion optics calculation. Beams are triangularly scanned to wafers for the even implantation by a proper magnetic field application. More than 10 mA ion current is produced. For the efficient implantation to be made, target is made to rotate with tilted angle at a displaced axis. High speed tools, diamond tools, precision dies, and razor blades were implanted and the performance was evaluated after two or three times of line application. Of those materials studied, PCB drills and end mills are on the commercial treatment stages. Industrial materials as SKD-11, WC-Co, NAK-55 was compositely treated with ion beam and coating. Resultant properties were analyzed using AES, XRD, and TEM. For the case of xenon ions, excellent TiN coating resulted and its application to microcircuit lead frame increased the performance to more than 30 percent. 94 figs, 29 pix, 19 tabs, 50 refs. (Author).

  20. Electrochemical behavior of TiAlSiN hard coatings synthesized by a multi-plasma immersion ion implantation and deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Gengzhu [University of Science and Technology Liaoning, Anshan 114051 (China); Xie, Zhiwen, E-mail: xzw@cigit.ac.cn [University of Science and Technology Liaoning, Anshan 114051 (China); Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 401122 (China); Chen, Tian [Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 401122 (China); Chen, Zhenyu [Key Laboratory of Power Sources, Institute of Power Sources, Tianjin 300381 (China); Song, Xiaohang [Shanghai Aerospace Equipments Manufacturer, Shanghai 401122 (China); Gao, Xu; Yu, Xiaoguang; Song, Hua [University of Science and Technology Liaoning, Anshan 114051 (China)

    2015-06-01

    The TiAlSiN coatings are synthesized by a multi-plasma immersion ion implantation and deposition technique. The microstructure and the electrochemical behavior of the as-deposited coatings are investigated by using X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy and electrochemical tests. These studies reveal that huge lattice distortions and dislocations emerge in the coating after introducing a small amount of Al component. These structural defects can facilitate the corrosion process of the TiAlN coating. The TiAlN coating exhibits a worse corrosion resistance performance than the TiN coating. The TiAlSiN coating has a two phase microstructure, nc-TiAlN/a-Si{sub 3}N{sub 4.} The grain size is greatly reduced after introducing Si component, whereas the portion of the a-Si{sub 3}N{sub 4} phase increases as the amount of Si increases in the coating. The reduced grain size and the increased percentage of the a-Si{sub 3}N{sub 4} phase in the TiAlSiN coatings enhance their ability in corrosion resistance. The TiAlSiN coating with a larger amount of Si shows better corrosion resistance performance. This research provides a comprehensive understanding of the relationship between the microstructure and the electrochemical behavior of the TiAlSiN hard coatings. - Highlights: • Microstructure and electrochemical behavior of TiAlSiN coatings are presented. • Al addition induces serious lattice distortions and dislocations. • Si incorporation induces an obvious grain refinement effect. • TiAlN coating shows a higher corrosion rate than the TiN coating. • TiAlSiN coating with higher Si content shows better corrosion resistance.

  1. Ion beam analysis of metal ion implanted surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Evans, P.J.; Chu, J.W.; Johnson, E.P.; Noorman, J.T. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Sood, D.K. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    Ion implantation is an established method for altering the surface properties of many materials. While a variety of analytical techniques are available for the characterisation of implanted surfaces, those based on particle accelerators such as Rutherford backscattering (RBS) and nuclear reaction analysis (NRA) provide some of the most useful and powerful for this purpose. Application of the latter techniques to metal ion implantation research at ANSTO will be described with particular reference to specific examples from recent studies. Where possible, the information obtained from ion beam analysis will be compared with that derived from other techniques such as Energy Dispersive X-ray (EDX) and Auger spectroscopies. 4 refs., 5 figs.

  2. Surface disorder production during plasma immersion implantation

    NARCIS (Netherlands)

    Lohner, T.; Khanh, N.Q.; Petrik, P.; Biro, L.P.; Fried, M.; Pinter, I.; Lehnert, W.; Frey, L.; Ryssel, H.; Wentink, D.J.; Gyulai, J.

    1998-01-01

    Comparative investigations were performed using high-depth-resolution Rutherford backscattering (RBS) combined with channeling, spectroellipsometry (SE) and atomic force microscopy (AFM) to analyze surface disorder and surface roughness formed during plasma immersion implantation of silicon (100) su

  3. Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn{sub 0.85}Mg{sub 0.15}O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Saha, S.; Nagar, S.; Chakrabarti, S., E-mail: subho@ee.iitb.ac.in [Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

    2014-08-11

    ZnMgO thin films deposited on 〈100〉 Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of 〈101{sup ¯}0〉 and 〈101{sup ¯}3〉 peaks for all the samples. However, in case of the annealed samples, the 〈0002〉 peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton–exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton–exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices.

  4. Effect of Implantation Machine Parameters on N+ ion Implantation for Upland Cotton (Gossypium hirsutum L.) Pollen

    Institute of Scientific and Technical Information of China (English)

    YUE Jieyu; YU Lixiang; WU Yuejin; TANG Canming

    2008-01-01

    Effect of parameters of ion implantation machine,including ion energy,total dose,dose rate,impulse energy and implantation interval on the pollen grains of upland cotton implanted with nitrogen ion beam were studied.The best parameters were screened out.The results also showed that the vacuum condition before the nitrogen ion implantation does not affect the pollen viability.

  5. Ion implantations of oxide dispersion strengthened steels

    Science.gov (United States)

    Sojak, S.; Simeg Veternikova, J.; Slugen, V.; Petriska, M.; Stacho, M.

    2015-12-01

    This paper is focused on a study of radiation damage and thermal stability of high chromium oxide dispersion strengthened steel MA 956 (20% Cr), which belongs to the most perspective structural materials for the newest generation of nuclear reactors - Generation IV. The radiation damage was simulated by the implantation of hydrogen ions up to the depth of about 5 μm, which was performed at a linear accelerator owned by Slovak University of Technology. The ODS steel MA 956 was available for study in as-received state after different thermal treatments as well as in ions implanted state. Energy of the hydrogen ions chosen for the implantation was 800 keV and the implantation fluence of 6.24 × 1017 ions/cm2. The investigated specimens were measured by non-destructive technique Positron Annihilation Lifetime Spectroscopy in order to study the defect behavior after different thermal treatments in the as-received state and after the hydrogen ions implantation. Although, different resistance to defect production was observed in individual specimens of MA 956 during the irradiation, all implanted specimens contain larger defects than the ones in as-received state.

  6. Krypton ion implantation effect on selenium nanowires

    Science.gov (United States)

    Panchal, Suresh; Chauhan, R. P.

    2017-08-01

    Among the rapidly progressing interdisciplinary areas of physics, chemistry, material science etc. ion induced modifications of materials is one such evolving field. It has been realized in recent years that a material, in the form of an accelerated ion beam, embedded into a target specimen offers a most productive tool for transforming its properties in a controlled manner. In semiconductors particularly, where the transport behavior is determined by very small concentrations of certain impurities, implantation of ions may bring considerable changes. The present work is based on the study of the effect of krypton ion implantation on selenium nanowires. Selenium nanowires of diameter 80 nm were synthesized by template assisted electro deposition technique. Implantation of krypton ions was done at Inter University Accelerator Centre (IUAC), New Delhi, India. The effect of implantation on structural, electrical and optical properties of selenium nanowires was investigated. XRD analysis of pristine and implanted nanowires shows no shifting in the peak position but there is a variation in the relative intensity with fluence. UV-Visible spectroscopy shows the decrease in the optical band gap with fluence. PL spectra showed emission peak at higher wavelength. A substantial rise in the current was observed from I-V measurements, after implantation and with the increase in fluence. The increase in current conduction may be due to the increase in the current carriers.

  7. Mg ion implantation on SLA-treated titanium surface and its effects on the behavior of mesenchymal stem cell

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Beom-Su; Kim, Jin Seong [Wonkwang Bone Regeneration Research Institute, Wonkwang University, Iksan 570-749 (Korea, Republic of); Bonecell Biotech Inc., 77, Dunsan-ro, Seo-gu, Daejeon 302-830 (Korea, Republic of); Park, Young Min [DIO Corporation, 66, Centum seo-ro, Haeundae-gu, Busan (Korea, Republic of); Choi, Bo-Young [Department of Oral and maxillofacial Surgery, Wonkwang University Daejeon Dental Hospital, Daejeon 302-830 (Korea, Republic of); Lee, Jun, E-mail: omslee@wku.ac.kr [Wonkwang Bone Regeneration Research Institute, Wonkwang University, Iksan 570-749 (Korea, Republic of); Bonecell Biotech Inc., 77, Dunsan-ro, Seo-gu, Daejeon 302-830 (Korea, Republic of)

    2013-04-01

    Magnesium (Mg) is one of the most important ions associated with bone osseointegration. The aim of this study was to evaluate the cellular effects of Mg implantation in titanium (Ti) surfaces treated with sand blast using large grit and acid etching (SLA). Mg ions were implanted into the surface via vacuum arc source ion implantation. The surface morphology, chemical properties, and the amount of Mg ion release were evaluated by scanning electron microscopy (SEM), Auger electron spectroscopy (AES), Rutherford backscattering spectroscopy (RBS), and inductively coupled plasma-optical emission spectrometer (ICP-OES). Human mesenchymal stem cells (hMSCs) were used to evaluate cellular parameters such as proliferation, cytotoxicity, and adhesion morphology by MTS assay, live/dead assay, and SEM. Furthermore, osteoblast differentiation was determined on the basis of alkaline phosphatase (ALP) activity and the degree of calcium accumulation. In the Mg ion-implanted disk, 2.3 × 10{sup 16} ions/cm{sup 2} was retained. However, after Mg ion implantation, the surface morphology did not change. Implanted Mg ions were rapidly released during the first 7 days in vitro. The MTS assay, live/dead assay, and SEM demonstrated increased cell attachment and growth on the Mg ion-implanted surface. In particular, Mg ion implantation increased the initial cell adhesion, and in an osteoblast differentiation assay, ALP activity and calcium accumulation. These findings suggest that Mg ion implantation using the plasma source ion implantation (PSII) technique may be useful for SLA-treated Ti dental implants to improve their osseointegration capacity. - Highlights: ► Mg ion was coated onto surface of SLA treated titanium via vacuum arc source ion implantation method. ► The morphological characteristics did not change after Mg ion implantation. ► Mg ion implanted SLA Ti is highly cytocompatible. ► Initial cell adhesion of MSCs is improved by Mg ion implantation. ► Mg ion implantation

  8. Transverse microanalysis of high energy Ion implants

    Energy Technology Data Exchange (ETDEWEB)

    Dooley, S.P.; Jamieson, D.N.; Nugent, K.W.; Prawer, S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

  9. High-energy ion implantation for ULSI

    Energy Technology Data Exchange (ETDEWEB)

    Tsukamoto, K.; Komori, S.; Kuroi, T.; Akasaka, Y. (LSI R and D Lab., Mitsubishi Electric Corp., Itami (Japan))

    1991-07-01

    The ''well engineering'' of a retrograde twin well formed by high-energy ion implantation for 0.5 {mu}m CMOS is demonstrated to be quite useful in improving many device characteristics, such as leakage current reduction, soft-error immunity, low latchup susceptibility, smaller device isolation dimensions, etc. In forming a heavily doped buried layer by high-energy ion implantation, a drastic reduction in leakage current has been found. This would be caused by gettering of impurities or microdefects by secondary defects which are induced either by implantation of dopant itself (''self-gettering'') or by an additional implantation of oxygen, carbon or fluorine (''proximity gettering''). (orig.).

  10. Simulation of ion implantation for ULSI technology

    CERN Document Server

    Hoessinger, A

    2000-01-01

    approximately constant an almost linear performance gain could be achieved by the parallelization method, even if a fairly slow network connects the workstations. Finally, the developed Monte-Carlo ion implantation simulator is applied to a set of examples making use of some of the special features of the simulator. Additionally a small operating manual for the simulator is included in the appendix. been developed and implemented. These methods enable to treat the implantation of molecular ions and atom clusters and thus the implantation of BF, which is a widely used for the doping with boron atoms. By providing two methods for the simulation of molecular ions the functionality of the simulator can be adapted to the problem requirements. While the simplified molecular method needs less computation time, the full molecular method provides more precise results. Another part of this work was the design and the implementation of a point response interface method. It allows to interface Monte-Carlo simulation resu...

  11. Cobalt alloy ion sources for focused ion beam implantation

    Energy Technology Data Exchange (ETDEWEB)

    Muehle, R.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Zimmermann, P. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Cobalt alloy ion sources have been developed for silicide formation by focused ion beam implantation. Four eutectic alloys AuCo, CoGe, CoY and AuCoGe were produced by electron beam welding. The AuCo liquid alloy ion source was investigated in detail. We have measured the emission current stability, the current-voltage characteristics, and the mass spectrum as a function of the mission current. (author) 1 fig., 2 refs.

  12. Hip implants - Paper VI - Ion concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Sargeant, A. [Department of Biological Sciences, Ohio Northern University, Ada, OH 45810 (United States); Goswami, T. [Department of Mechanical Engineering, Ohio Northern University, Ada, OH 45810 (United States)]. E-mail: t-goswami@onu.edu

    2007-07-01

    Total hip-joint arthroplasty is performed in increasing numbers where it translates to about 0.16-0.2% of population per year in industrial countries. In most cases, an implant is a metallic component articulating with a metal, ceramic or poly-ethylene liner as seen in the case of hip, knee and spine. The metal implants release ions in vivo. Therefore, there is a need to study metallic implants and ions released as a result. Toxic concentrations of ions can lead to many adverse physiological effects, including cytotoxicity, genotoxicity, carcinogenicity, and metal sensitivity. There is a need to map ion concentrations establishing boundaries between normal and toxic levels; which however, does not exist. Reference levels of ion concentrations in body fluids and tissues determined by many studies are compiled, reviewed, and presented in this paper. The concentrations of ions released from different alloys, including cobalt, chromium, nickel, molybdenum titanium, aluminum, and vanadium, are presented in this paper. This paper reviews the literature pertaining to clinical data on metal ion concentrations in patients with metal joint prostheses, and laboratory data on the physiological effects of the metals.

  13. Single Ion Implantation and Deterministic Doping

    Energy Technology Data Exchange (ETDEWEB)

    Schenkel, Thomas

    2010-06-11

    The presence of single atoms, e.g. dopant atoms, in sub-100 nm scale electronic devices can affect the device characteristics, such as the threshold voltage of transistors, or the sub-threshold currents. Fluctuations of the number of dopant atoms thus poses a complication for transistor scaling. In a complementary view, new opportunities emerge when novel functionality can be implemented in devices deterministically doped with single atoms. The grand price of the latter might be a large scale quantum computer, where quantum bits (qubits) are encoded e.g. in the spin states of electrons and nuclei of single dopant atoms in silicon, or in color centers in diamond. Both the possible detrimental effects of dopant fluctuations and single atom device ideas motivate the development of reliable single atom doping techniques which are the subject of this chapter. Single atom doping can be approached with top down and bottom up techniques. Top down refers to the placement of dopant atoms into a more or less structured matrix environment, like a transistor in silicon. Bottom up refers to approaches to introduce single dopant atoms during the growth of the host matrix e.g. by directed self-assembly and scanning probe assisted lithography. Bottom up approaches are discussed in Chapter XYZ. Since the late 1960's, ion implantation has been a widely used technique to introduce dopant atoms into silicon and other materials in order to modify their electronic properties. It works particularly well in silicon since the damage to the crystal lattice that is induced by ion implantation can be repaired by thermal annealing. In addition, the introduced dopant atoms can be incorporated with high efficiency into lattice position in the silicon host crystal which makes them electrically active. This is not the case for e.g. diamond, which makes ion implantation doping to engineer the electrical properties of diamond, especially for n-type doping much harder then for silicon. Ion

  14. Synthesis of titanium sapphire by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Morpeth, L.D.; McCallum, J.C.; Nugent, K.W. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1998-06-01

    Since laser action was first demonstrated in titanium sapphire (Ti:Al{sub 2}O{sub 3}) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al{sub 2}O{sub 3} waveguide laser. The implantation of Ti and O ions into c-axis oriented {alpha}-Al{sub 2}O{sub 3} followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti{sup 3+} ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of {approx} .6 to .9 {mu}m, similar to that expected from Ti{sup 3+}. Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al{sub 2O}3 waveguide. (authors). 8 refs., 3 figs.

  15. Hybrid quantum circuit with implanted erbium ions

    Energy Technology Data Exchange (ETDEWEB)

    Probst, S.; Rotzinger, H.; Tkalčec, A. [Physikalisches Institut, Karlsruhe Institute of Technology, D-76128 Karlsruhe (Germany); Kukharchyk, N.; Wieck, A. D. [Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstraße 150, D-44780 Bochum (Germany); Wünsch, S.; Siegel, M. [Institut für Mikro- und Nanoelektronische Systeme, Karlsruhe Institute of Technology, D-76189 Karlsruhe (Germany); Ustinov, A. V. [Physikalisches Institut, Karlsruhe Institute of Technology, D-76128 Karlsruhe (Germany); Laboratory of Superconducting Metamaterials, National University of Science and Technology “MISIS,” Moscow 119049 (Russian Federation); Bushev, P. A. [Experimentalphysik, Universität des Saarlandes, D-66123 Saarbrücken (Germany)

    2014-10-20

    We report on hybrid circuit quantum electrodynamics experiments with focused ion beam implanted Er{sup 3+} ions in Y{sub 2}SiO{sub 5} coupled to an array of superconducting lumped element microwave resonators. The Y{sub 2}SiO{sub 5} crystal is divided into several areas with distinct erbium doping concentrations, each coupled to a separate resonator. The coupling strength is varied from 5 MHz to 18.7 MHz, while the linewidth ranges between 50 MHz and 130 MHz. We confirm the paramagnetic properties of the implanted spin ensemble by evaluating the temperature dependence of the coupling. The efficiency of the implantation process is analyzed and the results are compared to a bulk doped Er:Y{sub 2}SiO{sub 5} sample. We demonstrate the integration of these engineered erbium spin ensembles with superconducting circuits.

  16. Implantation of sodium ions into germanium

    Energy Technology Data Exchange (ETDEWEB)

    Korol' , V. M., E-mail: vkorol@ctsnet.ru [Southern Federal University, Research Institute of Physics (Russian Federation); Kudriavtsev, Yu. [CINVESTAV, Dep. Ingenieria Electrica (Mexico)

    2012-02-15

    The donor properties of Na atoms introduced by ion implantation into p-Ge with the resistivity 20-40 {Omega} cm are established for the first time. Na profiles implanted into Ge (the energies 70 and 77 keV and the doses (0.8, 3, 30) Multiplication-Sign 10{sup 14} cm{sup -2}) are studied. The doses and annealing temperatures at which the thermoprobe detects n-type conductivity on the sample surface are established. After implantation, the profiles exhibit an extended tail. The depth of the concentration maximum is in good agreement with the calculated mean projected range of Na ions R{sub p}. Annealing for 30 min at temperatures of 250-700 Degree-Sign C brings about a redistribution of Na atoms with the formation of segregation peaks at a depth, which is dependent on the ion dose, and is accompanied by the diffusion of Na atoms to the surface with subsequent evaporation. After annealing at 700 Degree-Sign C less than 7% of the implanted ions remain in the matrix. The shape of the profile tail portions measured after annealing at temperatures 300-400 Degree-Sign C is indicative of the diffusion of a small fraction of Na atoms into the depth of the sample.

  17. Characterization of stainless steel through Scanning Electron Microscopy, nitrided in the process of implantation of immersed ions in plasma; Caracterizacion de acero inoxidable mediante Microscopia Electronica de Barrido nitrurado en el proceso de implantacion de iones inmersos en plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Moreno S, H

    2003-07-01

    The present project carries out the investigation of the nitridation of the austenitic stainless steel schedule 304, applying the novel technology of installation of nitrogen ions in immersed materials in plasma (Plll), by means of which they modify those properties of the surface of the steel. The obtained results by means of tests of Vickers microhardness, shows that the hardness was increment from 266 to 740 HV (microhardness units). It was determined by means of scanning electron microscopy, the one semiquantitative chemical analysis of the elements that constitute the austenitic stainless steel schedule 304; the obtained results, show to the nitrogen like an element of their composition in the pieces where carried out to end the PIII technology. The parameters of the plasma with which carried out the technology Plll, were monitored and determined by means of electric probes, and with which it was determined that the density of particles is stable in the interval of 1x10{sup -1} at 3x10{sup -1}Torr, and it is where better results of hardness were obtained. That reported in this work, they are the first results obtained when applying the technology Plll in Mexico, and with base in these, it is even necessary to investigate and to deepen until to dominate the process and to be in possibilities of proposing it to be carried out and exploited in an industrial way. (Author)

  18. Influence of Temperature on Nitrogen Ion Implantation of Ti6Al4V Alloy

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    In order to achieve increased layer thickness, and wearing resistance, enhanced ion implantation with nitrogen has been carried out at temperatures of 100, 200, 400, and 600℃ with a dose of 4× 1018 ions. cm-2. Using the Plasma Source Ion Implantation (PSⅡ) device, specimens of Ti6Al4V alloy were implanted at elevated temperatures, using the ion flux as the heating source. Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), micro-hardness measurements and pin-on-disk wearing tester were utilized to evaluate the surface property improvements. The thickness of the implanted layer increased by about an order of magnitude when the temperature was elevated from 100 to 600℃. Higher surface hardness and wearing resistance was also obtained in implantation under higher temperature. XRD image showed the presence of titanium nitrides on the implanted surface.

  19. Energetic ions in ITER plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Pinches, S. D. [ITER Organization, Route de Vinon-sur-Verdon, CS 90 046, 13067 St Paul-lez-Durance Cedex (France); Chapman, I. T.; Sharapov, S. E. [CCFE, Culham Science Centre, Abingdon, Oxfordshire OX14 3DB (United Kingdom); Lauber, Ph. W. [Max-Planck-Institut für Plasmaphysik, EURATOM-Association, Boltzmanstraße 2, D-85748 Garching (Germany); Oliver, H. J. C. [H H Wills Physics Laboratory, University of Bristol, Royal Fort, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); CCFE, Culham Science Centre, Abingdon, Oxfordshire OX14 3DB (United Kingdom); Shinohara, K. [Japan Atomic Energy Agency, Naka, Ibaraki 311-0193 (Japan); Tani, K. [Nippon Advanced Technology Co., Ltd, Naka, Ibaraki 311-0102 (Japan)

    2015-02-15

    This paper discusses the behaviour and consequences of the expected populations of energetic ions in ITER plasmas. It begins with a careful analytic and numerical consideration of the stability of Alfvén Eigenmodes in the ITER 15 MA baseline scenario. The stability threshold is determined by balancing the energetic ion drive against the dominant damping mechanisms and it is found that only in the outer half of the plasma (r/a>0.5) can the fast ions overcome the thermal ion Landau damping. This is in spite of the reduced numbers of alpha-particles and beam ions in this region but means that any Alfvén Eigenmode-induced redistribution is not expected to influence the fusion burn process. The influence of energetic ions upon the main global MHD phenomena expected in ITER's primary operating scenarios, including sawteeth, neoclassical tearing modes and Resistive Wall Modes, is also reviewed. Fast ion losses due to the non-axisymmetric fields arising from the finite number of toroidal field coils, the inclusion of ferromagnetic inserts, the presence of test blanket modules containing ferromagnetic material, and the fields created by the Edge Localised Mode (ELM) control coils in ITER are discussed. The greatest losses and associated heat loads onto the plasma facing components arise due to the use of the ELM control coils and come from neutral beam ions that are ionised in the plasma edge.

  20. Energetic ions in ITER plasmas

    Science.gov (United States)

    Pinches, S. D.; Chapman, I. T.; Lauber, Ph. W.; Oliver, H. J. C.; Sharapov, S. E.; Shinohara, K.; Tani, K.

    2015-02-01

    This paper discusses the behaviour and consequences of the expected populations of energetic ions in ITER plasmas. It begins with a careful analytic and numerical consideration of the stability of Alfvén Eigenmodes in the ITER 15 MA baseline scenario. The stability threshold is determined by balancing the energetic ion drive against the dominant damping mechanisms and it is found that only in the outer half of the plasma ( r / a > 0.5 ) can the fast ions overcome the thermal ion Landau damping. This is in spite of the reduced numbers of alpha-particles and beam ions in this region but means that any Alfvén Eigenmode-induced redistribution is not expected to influence the fusion burn process. The influence of energetic ions upon the main global MHD phenomena expected in ITER's primary operating scenarios, including sawteeth, neoclassical tearing modes and Resistive Wall Modes, is also reviewed. Fast ion losses due to the non-axisymmetric fields arising from the finite number of toroidal field coils, the inclusion of ferromagnetic inserts, the presence of test blanket modules containing ferromagnetic material, and the fields created by the Edge Localised Mode (ELM) control coils in ITER are discussed. The greatest losses and associated heat loads onto the plasma facing components arise due to the use of the ELM control coils and come from neutral beam ions that are ionised in the plasma edge.

  1. ION SOURCES FOR ENERGY EXTREMES OF ION IMPLANTATION.

    Energy Technology Data Exchange (ETDEWEB)

    HERSCHCOVITCH,A.; JOHNSON, B.M.; BATALIN, V.A.; KROPACHEV, G.N.; KUIBEDA, R.P.; KULEVOY, T.V.; KOLOMIETS, A.A.; PERSHIN, V.I.; PETRENKO, S.V.; RUDSKOY, I.; SELEZNEV, D.N.; BUGAEV, A.S.; GUSHENETS, V.I.; LITOVKO, I.V.; OKS, E.M.; YUSHKOV, G. YU.; MASEUNOV, E.S.; POLOZOV, S.M.; POOLE, H.J.; STOROZHENKO, P.A.; SVAROVSKI, YA.

    2007-08-26

    For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques, which meet the two energy extreme range needs of mega-electron-volt and 100's of electron-volt ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of Antimony and Phosphorous ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb{sup 4+}, Sb{sup 5+}, and Sb{sup 6+} respectively. For low energy ion implantation our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA of positive Decaborane ions were extracted at 10 keV and smaller currents of negative Decaborane ions were also extracted. Additionally, Boron current fraction of over 70% was extracted from a Bemas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.

  2. Ion sources for energy extremes of ion implantation.

    Science.gov (United States)

    Hershcovitch, A; Johnson, B M; Batalin, V A; Kropachev, G N; Kuibeda, R P; Kulevoy, T V; Kolomiets, A A; Pershin, V I; Petrenko, S V; Rudskoy, I; Seleznev, D N; Bugaev, A S; Gushenets, V I; Litovko, I V; Oks, E M; Yushkov, G Yu; Masunov, E S; Polozov, S M; Poole, H J; Storozhenko, P A; Svarovski, A Ya

    2008-02-01

    For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques that meet the two energy extreme range needs of meV and hundreads of eV ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of antimony and phosphorus ions: P(2+) [8.6 pmA (particle milliampere)], P(3+) (1.9 pmA), and P(4+) (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb(3+)Sb(4+), Sb(5+), and Sb(6+) respectively. For low energy ion implantation, our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA (electrical milliampere) of positive decaborane ions was extracted at 10 keV and smaller currents of negative decaborane ions were also extracted. Additionally, boron current fraction of over 70% was extracted from a Bernas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.

  3. Ion beam extraction from a matrix ECR plasma source by discrete ion-focusing effect

    DEFF Research Database (Denmark)

    Stamate, Eugen; Draghici, Mihai

    2010-01-01

    Positive or negative ion beams extracted from plasma are used in a large variety of surface functionalization techniques such as implantation, etching, surface activation, passivation or oxidation. Of particular importance is the surface treatment of materials sensitive to direct plasma exposure ...

  4. Plasma ion composition measurements for Europa

    Science.gov (United States)

    Sittler, E. C.; Cooper, J. F.; Hartle, R. E.; Paterson, W. R.; Christian, E. R.; Lipatov, A. S.; Mahaffy, P. R.; Paschalidis, N. P.; Coplan, M. A.; Cassidy, T. A.; Richardson, J. D.; Fegley, B.; Andre, N.

    2013-11-01

    Jupiter magnetospheric interactions and surface composition, both important to subsurface ocean detection for the Galilean icy moons Europa, Ganymede, and Callisto, can be measured using plasma ion mass spectrometry on either an orbiting spacecraft or one designed for multiple flybys of these moons. Detection of emergent oceanic materials at the Europa surface is more likely than at Ganymede and Callisto. A key challenge is to resolve potential intrinsic Europan materials from the space weathering patina of iogenic species implanted onto the sensible surface by magnetospheric interactions. Species-resolved measurements of pickup ion currents are also critical to extraction of oceanic induced magnetic fields from magnetospheric interaction background dominated by these currents. In general the chemical astrobiological potential of Europa should be determined through the combination of surface, ionospheric, and pickup ion composition measurements. The requisite Ion Mass Spectrometer (IMS) for these measurements would need to work in the high radiation environment of Jupiter's magnetosphere between the orbits of Europa and Ganymede, and beyond. A 3D hybrid model of the moon-magnetosphere interaction is also needed to construct a global model of the electric and magnetic fields, and the plasma environment, around Europa. Europa's ionosphere is probably usually dominated by hot pickup ions with 100-1000 eV temperatures, excursions to a "classical" cold ionosphere likely being infrequent. A field aligned ionospheric wind driven by the electron polarization electric field should arise and be measurable.

  5. Molecular ion sources for low energy semiconductor ion implantation (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, A., E-mail: hershcovitch@bnl.gov [Brookhaven National Laboratory, Upton, New York 11973 (United States); Gushenets, V. I.; Bugaev, A. S.; Oks, E. M.; Vizir, A.; Yushkov, G. Yu. [High Current Electronics Institute, Siberian Branch of Russian Academy of Sciences, Tomsk 634055 (Russian Federation); Seleznev, D. N.; Kulevoy, T. V.; Kozlov, A.; Kropachev, G. N.; Kuibeda, R. P.; Minaev, S. [Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Dugin, S.; Alexeyenko, O. [State Scientific Center of the Russian Federation State Research Institute for Chemistry and Technology of Organoelement Compounds, Moscow (Russian Federation)

    2016-02-15

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C{sub 4}H{sub 12}B{sub 10}O{sub 4}) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH{sub 3} = P{sub 4} + 6H{sub 2}; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P{sub 4}{sup +} ion beams were extracted. Results from devices and some additional concepts are described.

  6. Accelerating degradation rate of pure iron by zinc ion implantation

    Science.gov (United States)

    Huang, Tao; Zheng, Yufeng; Han, Yong

    2016-01-01

    Pure iron has been considered as a promising candidate for biodegradable implant applications. However, a faster degradation rate of pure iron is needed to meet the clinical requirement. In this work, metal vapor vacuum arc technology was adopted to implant zinc ions into the surface of pure iron. Results showed that the implantation depth of zinc ions was about 60 nm. The degradation rate of pure iron was found to be accelerated after zinc ion implantation. The cytotoxicity tests revealed that the implanted zinc ions brought a slight increase on cytotoxicity of the tested cells. In terms of hemocompatibility, the hemolysis of zinc ion implanted pure iron was lower than 2%. However, zinc ions might induce more adhered and activated platelets on the surface of pure iron. Overall, zinc ion implantation can be a feasible way to accelerate the degradation rate of pure iron for biodegradable applications. PMID:27482462

  7. Cluster Ion Implantation in Graphite and Diamond

    DEFF Research Database (Denmark)

    Popok, Vladimir

    2014-01-01

    Cluster ion beam technique is a versatile tool which can be used for controllable formation of nanosize objects as well as modification and processing of surfaces and shallow layers on an atomic scale. The current paper present an overview and analysis of data obtained on a few sets of graphite a...... implantation. Implantation of cobalt and argon clusters into two different allotropic forms of carbon, namely, graphite and diamond is analysed and compared in order to approach universal theory of cluster stopping in matter....... and diamond samples implanted by keV-energy size-selected cobalt and argon clusters. One of the emphases is put on pinning of metal clusters on graphite with a possibility of following selective etching of graphene layers. The other topic of concern is related to the development of scaling law for cluster...

  8. Ion beam extraction from a matrix ECR plasma source by discrete ion-focusing effect

    DEFF Research Database (Denmark)

    Stamate, Eugen; Draghici, Mihai

    2010-01-01

    Positive or negative ion beams extracted from plasma are used in a large variety of surface functionalization techniques such as implantation, etching, surface activation, passivation or oxidation. Of particular importance is the surface treatment of materials sensitive to direct plasma exposure...... due to high heath fluxes, the controllability of the ion incidence angle, and charge accumulation when treating insulating materials. Despite of a large variety of plasma sources available for ion beam extraction, there is a clear need for new extraction mechanisms that can make available ion beams...... with high current densities that can treat surfaces placed adjacent to the extraction region. This work introduces a new phenomenology for ion beam extraction using the discrete ion-focusing effect associated with three-dimensional plasma-sheath-lenses [1, 2]. Experiments are performed in a matrix...

  9. Study on the Properties of TiN Coatings on Previously Ion-Implanted Pure Magnesium Surface by MEVVA Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    ZHOU Hai; CHEN Fei; WANG Jian-ping

    2007-01-01

    A metal vapor vacuum arc (MEVVA) is used in ion implantation for substrate preparation before the deposition process which would ensure the improvement of mechanical properties of the coating.Ti ion is implanted into pure magnesium surface by MEVVA implanter operated with a modified cathode.Implanting energy is kept at 45 keV and dose is set at 3×1017 cm-2.TiN coatings are deposited by magnetically filtered vacuum-arc plasma source on unimplanted and previously implanted substrates.Microstructure and phase composition are analysed using scanning electron microscopy (SEM) and X-ray diffraction (XRD).The property of corrosion resistance of TiN coatings was studied by CS300P electrochemistry-corrosion workstation,and the main impact factor of the corrosion resistance was also analyzed.

  10. Paramagnetism in ion-implanted oxides

    CERN Document Server

    Mølholt, Torben Esmann; Gíslason, Hafliði Pétur; Ólafsson, Sveinn

    This thesis describes the investigation on para-magnetism in dilute ion-implanted single-crystal oxide samples studied by on- and off-line $^{57}$Fe emission Mössbauer spectroscopy. The ion-implantation of the radioactive isotopes ( $^{57}$Mn and $^{57}$Co) was performed at the ISOLDE facility at CERN in Geneva, Switzerland. The off-line measurements were performed at Aarhus University, Denmark. Mössbauer spectroscopy is a unique method, giving simultaneously local information on valence/spin state of the $^{57}$Fe probe atoms, site symmetry and magnetic properties on an atomic scale. The utilisation of emission Mössbauer spectroscopy opens up many new possibilities compared with traditional transmission Mössbauer spectroscopy. Among them is the possibility of working with a low concentration below 10$^{-4}$ –10$^{-3}$ at.%, where the implanted Mössbauer $^{57}$Fe probes are truly dilute impurities exclusively interacting with their nearest neighbours and therefore the possibility of crea...

  11. Ion-Implanted Diamond Films and Their Tribological Properties

    Science.gov (United States)

    Wu, Richard L. C.; Miyoshi, Kazuhisa; Korenyi-Both, Andras L.; Garscadden, Alan; Barnes, Paul N.

    1993-01-01

    This paper reports the physical characterization and tribological evaluation of ion-implanted diamond films. Diamond films were produced by microwave plasma, chemical vapor deposition technique. Diamond films with various grain sizes (0.3 and 3 microns) and roughness (9.1 and 92.1 nm r.m.s. respectively) were implanted with C(+) (m/e = 12) at an ion energy of 160 eV and a fluence of 6.72 x 10(exp 17) ions/sq cm. Unidirectional sliding friction experiments were conducted in ultrahigh vacuum (6.6 x 10(exp -7)Pa), dry nitrogen and humid air (40% RH) environments. The effects of C(+) ion bombardment on fine and coarse-grained diamond films are as follows: the surface morphology of the diamond films did not change; the surface roughness increased (16.3 and 135.3 nm r.m.s.); the diamond structures were damaged and formed a thin layer of amorphous non-diamond carbon; the friction coefficients dramatically decreased in the ultrahigh vacuum (0.1 and 0.4); the friction coefficients decreased slightly in the dry nitrogen and humid air environments.

  12. Production of Endohedral Fullerenes by Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Diener, M.D.; Alford, J. M.; Mirzadeh, S.

    2007-05-31

    The empty interior cavity of fullerenes has long been touted for containment of radionuclides during in vivo transport, during radioimmunotherapy (RIT) and radioimaging for example. As the chemistry required to open a hole in fullerene is complex and exceedingly unlikely to occur in vivo, and conformational stability of the fullerene cage is absolute, atoms trapped within fullerenes can only be released during extremely energetic events. Encapsulating radionuclides in fullerenes could therefore potentially eliminate undesired toxicity resulting from leakage and catabolism of radionuclides administered with other techniques. At the start of this project however, methods for production of transition metal and p-electron metal endohedral fullerenes were completely unknown, and only one method for production of endohedral radiofullerenes was known. They therefore investigated three different methods for the production of therapeutically useful endohedral metallofullerenes: (1) implantation of ions using the high intensity ion beam at the Oak Ridge National Laboratory (ORNL) Surface Modification and Characterization Research Center (SMAC) and fullerenes as the target; (2) implantation of ions using the recoil energy following alpha decay; and (3) implantation of ions using the recoil energy following neutron capture, using ORNL's High Flux Isotope Reactor (HFIR) as a thermal neutron source. While they were unable to obtain evidence of successful implantation using the ion beam at SMAC, recoil following alpha decay and neutron capture were both found to be economically viable methods for the production of therapeutically useful radiofullerenes. In this report, the procedures for preparing fullerenes containing the isotopes {sup 212}Pb, {sup 212}Bi, {sup 213}Bi, and {sup 177}Lu are described. None of these endohedral fullerenes had ever previously been prepared, and all of these radioisotopes are actively under investigation for RIT. Additionally, the chemistry for

  13. Computational stochastic model of ions implantation

    Energy Technology Data Exchange (ETDEWEB)

    Zmievskaya, Galina I., E-mail: zmi@gmail.ru; Bondareva, Anna L., E-mail: bal310775@yandex.ru [M.V. Keldysh Institute of Applied Mathematics RAS, 4,Miusskaya sq., 125047 Moscow (Russian Federation); Levchenko, Tatiana V., E-mail: tatlevchenko@mail.ru [VNII Geosystem Russian Federal Center, Varshavskoye roadway, 8, Moscow (Russian Federation); Maino, Giuseppe, E-mail: giuseppe.maino@enea.it [Scuola di Lettere e BeniCulturali, University di Bologna, sede di Ravenna, via Mariani 5, 48100 Ravenna (Italy)

    2015-03-10

    Implantation flux ions into crystal leads to phase transition /PT/ 1-st kind. Damaging lattice is associated with processes clustering vacancies and gaseous bubbles as well their brownian motion. System of stochastic differential equations /SDEs/ Ito for evolution stochastic dynamical variables corresponds to the superposition Wiener processes. The kinetic equations in partial derivatives /KE/, Kolmogorov-Feller and Einstein-Smolukhovskii, were formulated for nucleation into lattice of weakly soluble gases. According theory, coefficients of stochastic and kinetic equations uniquely related. Radiation stimulated phase transition are characterized by kinetic distribution functions /DFs/ of implanted clusters versus their sizes and depth of gas penetration into lattice. Macroscopic parameters of kinetics such as the porosity and stress calculated in thin layers metal/dielectric due to Xe{sup ++} irradiation are attracted as example. Predictions of porosity, important for validation accumulation stresses in surfaces, can be applied at restoring of objects the cultural heritage.

  14. Biodegradable radioactive implants for glaucoma filtering surgery produced by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Assmann, W. [Department fuer Physik, Ludwig-Maximilians-Universitaet Muenchen, 85748 Garching (Germany)]. E-mail: walter.assmann@lmu.de; Schubert, M. [Department fuer Physik, Ludwig-Maximilians-Universitaet Muenchen, 85748 Garching (Germany); Held, A. [Augenklinik, Technische Universitaet Muenchen, 81675 Munich (Germany); Pichler, A. [Augenklinik, Technische Universitaet Muenchen, 81675 Muenchen (Germany); Chill, A. [Zentralinstitut fuer Medizintechnik, Technische Universitaet Muenchen, 85748 Garching (Germany); Kiermaier, S. [Zentralinstitut fuer Medizintechnik, Technische Universitaet Muenchen, 85748 Garching (Germany); Schloesser, K. [Forschungszentrum Karlsruhe, 76021 Karlsruhe (Germany); Busch, H. [NTTF GmbH, 53619 Rheinbreitbach (Germany); Schenk, K. [NTTF GmbH, 53619 Rheinbreitbach (Germany); Streufert, D. [Acri.Tec GmbH, 16761 Hennigsdorf (Germany); Lanzl, I. [Augenklinik, Technische Universitaet Muenchen, 81675 Munich (Germany)

    2007-04-15

    A biodegradable, {beta}-emitting implant has been developed and successfully tested which prevents fresh intraocular pressure increase after glaucoma filtering surgery. Ion implantation has been used to load the polymeric implants with the {beta}-emitter {sup 32}P. The influence of ion implantation and gamma sterilisation on degradation and {sup 32}P-fixation behavior has been studied by ion beam and chemical analysis. Irradiation effects due to the applied ion fluence (10{sup 15} ions/cm{sup 2}) and gamma dose (25 kGy) are found to be tolerable.

  15. Drift wave in pair-ion plasma

    Indian Academy of Sciences (India)

    Samiran Ghosh; Nikhil Chakrabarti; Manoranjan Khan; M R Gupta

    2013-02-01

    The conditions for the existence of low-frequency electrostatic drift wave in pair-ion plasma are discussed. It is shown that the temperature and/or mass difference of both species could produce drift wave in a pair-ion plasma. The results are discussed in the context of the fullerene pair-ion plasma experiment.

  16. Effect of Implantation Machine Parameters on N+ ion Implantation for Upland Cotton(Gossypium hirsutum L.) Pollen

    Science.gov (United States)

    Yue, Jieyu; Yu, Lixiang; Wu, Yuejin; Tang, Canming

    2008-10-01

    Effect of parameters of ion implantation machine, including ion energy, total dose, dose rate, impulse energy and implantation interval on the pollen grains of upland cotton implanted with nitrogen ion beam were studied. The best parameters were screened out. The results also showed that the vacuum condition before the nitrogen ion implantation does not affect the pollen viability.

  17. Some plasma aspects and plasma diagnostics of ion sources.

    Science.gov (United States)

    Wiesemann, Klaus

    2008-02-01

    We consider plasma properties in the most advanced type of plasma ion sources, electron cyclotron resonance ion sources for highly charged ions. Depending on the operation conditions the plasma in these sources may be highly ionized, which completely changes its transport properties. The most striking difference to weakly ionized plasma is that diffusion will become intrinsically ambipolar. We further discuss means of plasma diagnostics. As noninvasive diagnostic methods we will discuss analysis of the ion beam, optical spectroscopy, and measurement of the x-ray bremsstrahlung continuum. From beam analysis and optical spectroscopy one may deduce ion densities, and electron densities and distribution functions as a mean over the line of sight along the axis (optical spectroscopy) or at the plasma edge (ion beam). From x-ray spectra one obtains information about the population of highly energetic electrons and the energy transfer from the driving electromagnetic waves to the plasma -- basic data for plasma modeling.

  18. Plasma ion sources and ion beam technology inmicrofabrications

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Lili [Univ. of California, Berkeley, CA (United States)

    2007-01-01

    For over decades, focused ion beam (FIB) has been playing a very important role in microscale technology and research, among which, semiconductor microfabrication is one of its biggest application area. As the dimensions of IC devices are scaled down, it has shown the need for new ion beam tools and new approaches to the fabrication of small-scale devices. In the meanwhile, nanotechnology has also deeply involved in material science research and bioresearch in recent years. The conventional FIB systems which utilize liquid gallium ion sources to achieve nanometer scale resolution can no longer meet the various requirements raised from such a wide application area such as low contamination, high throughput and so on. The drive towards controlling materials properties at nanometer length scales relies on the availability of efficient tools. In this thesis, three novel ion beam tools have been developed and investigated as the alternatives for the conventional FIB systems in some particular applications. An integrated focused ion beam (FIB) and scanning electron microscope (SEM) system has been developed for direct doping or surface modification. This new instrument employs a mini-RF driven plasma source to generate focused ion beam with various ion species, a FEI two-lens electron (2LE) column for SEM imaging, and a five-axis manipulator system for sample positioning. An all-electrostatic two-lens column has been designed to focus the ion beam extracted from the source. Based on the Munro ion optics simulation, beam spot sizes as small as 100 nm can be achieved at beam energies between 5 to 35 keV if a 5 μm-diameter extraction aperture is used. Smaller beam spot sizes can be obtained with smaller apertures at sacrifice of some beam current. The FEI 2LE column, which utilizes Schottky emission, electrostatic focusing optics, and stacked-disk column construction, can provide high-resolution (as small as 20 nm) imaging capability, with fairly long working distance (25

  19. Mg ion implantation on SLA-treated titanium surface and its effects on the behavior of mesenchymal stem cell.

    Science.gov (United States)

    Kim, Beom-Su; Kim, Jin Seong; Park, Young Min; Choi, Bo-Young; Lee, Jun

    2013-04-01

    Magnesium (Mg) is one of the most important ions associated with bone osseointegration. The aim of this study was to evaluate the cellular effects of Mg implantation in titanium (Ti) surfaces treated with sand blast using large grit and acid etching (SLA). Mg ions were implanted into the surface via vacuum arc source ion implantation. The surface morphology, chemical properties, and the amount of Mg ion release were evaluated by scanning electron microscopy (SEM), Auger electron spectroscopy (AES), Rutherford backscattering spectroscopy (RBS), and inductively coupled plasma-optical emission spectrometer (ICP-OES). Human mesenchymal stem cells (hMSCs) were used to evaluate cellular parameters such as proliferation, cytotoxicity, and adhesion morphology by MTS assay, live/dead assay, and SEM. Furthermore, osteoblast differentiation was determined on the basis of alkaline phosphatase (ALP) activity and the degree of calcium accumulation. In the Mg ion-implanted disk, 2.3×10(16) ions/cm(2) was retained. However, after Mg ion implantation, the surface morphology did not change. Implanted Mg ions were rapidly released during the first 7 days in vitro. The MTS assay, live/dead assay, and SEM demonstrated increased cell attachment and growth on the Mg ion-implanted surface. In particular, Mg ion implantation increased the initial cell adhesion, and in an osteoblast differentiation assay, ALP activity and calcium accumulation. These findings suggest that Mg ion implantation using the plasma source ion implantation (PSII) technique may be useful for SLA-treated Ti dental implants to improve their osseointegration capacity. Copyright © 2012 Elsevier B.V. All rights reserved.

  20. PLEPS study of ions implanted RAFM steels

    Science.gov (United States)

    Sojak, S.; Slugeň, V.; Egger, W.; Ravelli, L.; Petriska, M.; Veterníková, J.; Stacho, M.; Sabelová, V.

    2014-04-01

    Current nuclear power plants (NPP) require radiation, heat and mechanical resistance of their structural materials with the ability to stay operational during NPP planned lifetime. Radiation damage much higher, than in the current NPP, is expected in new generations of nuclear power plants, such as Generation IV and fusion reactors. Investigation of perspective structural materials for new generations of nuclear power plants is among others focused on study of reduced activation ferritic/martensitic (RAFM) steels. These steels have good characteristics as reduced activation, good resistance to volume swelling, good radiation, and heat resistance. Our experiments were focused on the study of microstructural changes of binary Fe-Cr alloys with different chromium content after irradiation, experimentally simulated by ion implantations. Fe-Cr alloys were examined, by Pulsed Low Energy Positron System (PLEPS) at FRM II reactor in Garching (Munich), after helium ion implantations at the dose of 0.1 C/cm2. The investigation was focused on the chromium effect and the radiation defects resistivity. In particular, the vacancy type defects (monovacancies, vacancy clusters) have been studied. Based on our previous results achieved by conventional lifetime technique, the decrease of the defects size with increasing content of chromium is expected also for PLEPS measurements.

  1. Biological Effects on Fruit Fly by N+ ion Beam Implantation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Mutation induced by low energy ion beam implantation has beenapplied widely both in plants and microbes. However, due to the vacuum limitation, such ion implantation into animals was never studied except for silkworm. In this study, Pupae of fruit fly were irradiated with different dosage N+ ions at energy 20 KeV to study the biological effect of ion beam on animal. The results showed a saddle-like curve exists between incubate rate and dosage. Damage of pupae by ion beam implantation was observed using scanning electron microscope. Some individuals with incomplete wing were obtained after implantation but no similar character was observed in their offspring. Furthermore, about 5.47% mutants with wide variation appeared in M1 generation. Therefore, ion beam implantation could be widely used for mutation breeding.

  2. Surface bioactivity of plasma implanted silicon and amorphous carbon

    Institute of Scientific and Technical Information of China (English)

    Paul K CHU

    2004-01-01

    Plasma immersion ion implantation and deposition (PⅢ&D) has been shown to be an effective technique to enhance the surface bioactivity of materials. In this paper, recent progress made in our laboratory on plasma surface modification single-crystal silicon and amorphous carbon is reviewed. Silicon is the most important material in the integrated circuit industry but its surface biocompatibility has not been investigated in details. We have recently performed hydrogen PⅢ into silicon and observed the biomimetic growth of apatite on its surface in simulated body fluid. Diamond-like carbon (DLC) is widely used in the industry due to its excellent mechanical properties and chemical inertness. The use of this material in biomedical engineering has also attracted much attention. It has been observed in our laboratory that doping DLC with nitrogen by means of PⅢ can improve the surface blood compatibility. The properties as well as in vitro biological test results will be discussed in this article.

  3. Ion implantation induced blistering of rutile single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Bing-Xi [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Jiao, Yang [College of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250100 (China); Guan, Jing [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Wang, Lei [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China)

    2015-07-01

    The rutile single crystals were implanted by 200 keV He{sup +} ions with a series fluence and annealed at different temperatures to investigate the blistering behavior. The Rutherford backscattering spectrometry, optical microscope and X-ray diffraction were employed to characterize the implantation induced lattice damage and blistering. It was found that the blistering on rutile surface region can be realized by He{sup +} ion implantation with appropriate fluence and the following thermal annealing.

  4. Streaming instability in negative ion plasma

    Science.gov (United States)

    Kumar, Ajith; Mathew, Vincent

    2017-09-01

    The streaming instability in an unmagnetized negative ion plasma has been studied by computational and theoretical methods. A one dimensional electrostatic Particle In Cell Simulation and fluid dynamical description of negative ion plasma showed that, if the positive ions are having a relative streaming velocity, four different wave modes corresponding to Langmuir wave, fast and slow ion waves and ion acoustic waves are produced. Below a critical wave number, instead of two distinct fast and slow ion waves, we observed a coupled wave mode. The value of the critical wave number is strongly determined by the ion streaming velocity. The thermal velocities of electrons and ions influence the growth rate of instability.

  5. Self-organized surface ripple pattern formation by ion implantation

    Science.gov (United States)

    Hofsäss, Hans; Zhang, Kun; Bobes, Omar

    2016-10-01

    Ion induced ripple pattern formation on solid surfaces has been extensively studied in the past and the theories describing curvature dependent ion erosion as well as redistribution of recoil atoms have been very successful in explaining many features of the pattern formation. Since most experimental studies use noble gas ion irradiation, the incorporation of the ions into the films is usually neglected. In this work we show that the incorporation or implantation of non-volatile ions also leads to a curvature dependent term in the equation of motion of a surface height profile. The implantation of ions can be interpreted as a negative sputter yield; and therefore, the effect of ion implantation is opposite to the one of ion erosion. For angles up to about 50°, implantation of ions stabilizes the surface, whereas above 50°, ion implantation contributes to the destabilization of the surface. We present simulations of the curvature coefficients using the crater function formalism and we compare the simulation results to the experimental data on the ion induced pattern formation using non-volatile ions. We present several model cases, where the incorporation of ions is a crucial requirement for the pattern formation.

  6. Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Chang Seouk [Busan Center, Korea Basic Science Institute, Busan 609-735 (Korea, Republic of); School of Mechanical Engineering, Pusan National University, Pusan 609-735 (Korea, Republic of); Lee, Byoung-Seob; Choi, Seyong; Yoon, Jang-Hee; Kim, Hyun Gyu; Ok, Jung-Woo; Park, Jin Yong; Kim, Seong Jun; Bahng, Jungbae; Hong, Jonggi; Won, Mi-Sook, E-mail: mswon@kbsi.re.kr [Busan Center, Korea Basic Science Institute, Busan 609-735 (Korea, Republic of); Lee, Seung Wook, E-mail: Seunglee@pusan.ac.kr [School of Mechanical Engineering, Pusan National University, Pusan 609-735 (Korea, Republic of)

    2016-02-15

    The installation of the 28 GHz electron cyclotron resonance ion source (ECRIS) ion implantation beamline was recently completed at the Korea Basic Science Institute. The apparatus contains a beam monitoring system and a sample holder for the ion implantation process. The new implantation system can function as a multipurpose tool since it can implant a variety of ions, ranging hydrogen to uranium, into different materials with precise control and with implantation areas as large as 1–10 mm{sup 2}. The implantation chamber was designed to measure the beam properties with a diagnostic system as well as to perform ion implantation with an in situ system including a mass spectrometer. This advanced implantation system can be employed in novel applications, including the production of a variety of new materials such as metals, polymers, and ceramics and the irradiation testing and fabrication of structural and functional materials to be used in future nuclear fusion reactors. In this investigation, the first nitrogen ion implantation experiments were conducted using the new system. The 28 GHz ECRIS implanted low-energy, multi-charged nitrogen ions into copper, zinc, and cobalt substrates, and the ion implantation depth profiles were obtained. SRIM 2013 code was used to calculate the profiles under identical conditions, and the experimental and simulation results are presented and compared in this report. The depths and ranges of the ion distributions in the experimental and simulation results agree closely and demonstrate that the new system will enable the treatment of various substrates for advanced materials research.

  7. Ultrahigh-current-density metal-ion implantation and diamondlike-hydrocarbon films for tribological applications

    Science.gov (United States)

    Wilbur, P. J.

    1993-09-01

    The metal-ion-implantation system used to implant metals into substrates are described. The metal vapor required for operation is supplied by drawing sufficient electron current from the plasma discharge to an anode-potential crucible so a solid, pure metal placed in the crucible will be heated to the point of vaporization. The ion-producing, plasma discharge is initiated within a graphite-ion-source body, which operates at high temperature, by using an argon flow that is turned off once the metal vapor is present. Extraction of ion beams several cm in diameter at current densities ranging to several hundred micro-A/sq cm on a target 50 cm downstream of the ion source were demonstrated using Mg, Ag, Cr, Cu, Si, Ti, V, B, and Zr. These metals were implanted into over 100 substrates (discs, pins, flats, wires). A model describing thermal stresses induced in materials (e.g. ceramic plates) during high-current-density implantation is presented. Tribological and microstructural characteristics of iron and 304-stainless-steel samples implanted with Ti or B are examined. Diamondlike-hydrocarbon coatings were applied to steel surfaces and found to exhibit good tribological performance.

  8. The effect of plasma surface treatment on the bioactivity of titanium implant materials (in vitro).

    Science.gov (United States)

    Abdelrahim, Ramy A; Badr, Nadia A; Baroudi, Kusai

    2016-01-01

    The surface of an implantable biomaterial plays a very important role in determining the biocompatibility, osteoinduction, and osteointegration of implants because it is in intimate contact with the host bone and soft tissues. This study was aimed to assess the effect of plasma surface treatment on the bioactivity of titanium alloy (Ti-6Al-4V). Fifteen titanium alloy samples were used in this study. The samples were divided into three groups (with five samples in each group). Five samples were kept untreated and served as control (group A). Another five plasma samples were sprayed for nitrogen ion implantation on their surfaces (group B) and the last five samples were pre-etched with acid before plasma treatment (group C). All the investigated samples were immersed for 7 days in Hank's balanced salt solution (HBSS) which was used as a simulating body fluid (SBF) at pH 7.4 and 37°C. HBSS was renewed every 3 days. The different surfaces were characterized by X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDXA), and Fourier Transformation Infrared Spectroscopy (FTIR). Nitriding of Ti-alloy samples via plasma nitrogen ion implantation increased the bioactivity of titanium. Moreover, the surface topography affected the chemical structure of the formed apatite. Increasing the surface roughness enhanced the bioactivity of the implant material. Nitridation can be exploited as an effective way to promote the formation of bone-like material on the implant surface.

  9. Thin hydroxyapatite surface layers on titanium produced by ion implantation

    CERN Document Server

    Baumann, H; Bilger, G; Jones, D; Symietz, I

    2002-01-01

    In medicine metallic implants are widely used as hip replacement protheses or artificial teeth. The biocompatibility is in all cases the most important requirement. Hydroxyapatite (HAp) is frequently used as coating on metallic implants because of its high acceptance by the human body. In this paper a process is described by which a HAp surface layer is produced by ion implantation with a continuous transition to the bulk material. Calcium and phosphorus ions are successively implanted into titanium under different vacuum conditions by backfilling oxygen into the implantation chamber. Afterwards the implanted samples are thermally treated. The elemental composition inside the implanted region was determined by nuclear analysis methods as (alpha,alpha) backscattering and the resonant nuclear reaction sup 1 H( sup 1 sup 5 N,alpha gamma) sup 1 sup 2 C. The results of X-ray photoelectron spectroscopy indicate the formation of HAp. In addition a first biocompatibility test was performed to compare the growing of m...

  10. Temperature-dependant study of phosphorus ion implantation in germanium

    Science.gov (United States)

    Razali, M. A.; Smith, A. J.; Jeynes, C.; Gwilliam, R. M.

    2012-11-01

    We present experimental results on shallow junction formation in germanium by phosphorus ion implantation and standard rapid thermal processing. An attempt is made to improve phosphorus activation by implanting phosphorus at high and low temperature. The focus is on studying the germanium damage and phosphorus activation as a function of implant temperature. Rutherford backscattering spectrometry with channelling and Hall Effect measurements are employed for characterisation of germanium damage and phosphorus activation, respectively. High and low temperature implants were found to be better compared to room temperature implant.

  11. Ion-Acoustic Instabilities in a Multi-Ion Plasma

    Directory of Open Access Journals (Sweden)

    Noble P. Abraham

    2013-01-01

    Full Text Available We have, in this paper, studied the stability of the ion-acoustic wave in a plasma composed of hydrogen, positively and negatively charged oxygen ions, and electrons, which approximates very well the plasma environment around a comet. Modelling each cometary component (H+, O+, and O− by a ring distribution, we find that ion-acoustic waves can be generated at frequencies comparable to the hydrogen ion plasma frequency. The dispersion relation has been solved both analytically and numerically. We find that the ratio of the ring speed (u⊥s to the thermal spread (vts modifies the dispersion characteristics of the ion-acoustic wave. The contrasting behaviour of the phase velocity of the ion-acoustic wave in the presence of O− ions for u⊥s>vts (and vice versa can be used to detect the presence of negatively charged oxygen ions and also their thermalization.

  12. Ion implantation in silicon to facilitate testing of photonic circuits

    Science.gov (United States)

    Reed, Graham T.; Milosevic, Milan M.; Chen, Xia; Cao, Wei; Littlejohns, Callum G.; Wang, Hong; Khokhar, Ali Z.; Thomson, David J.

    2017-02-01

    In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to develop a range of optical devices that are reported in this paper. Ion implantation into silicon causes radiation damage resulting in a refractive index increase, and can therefore form the basis of multiple optical devices. We demonstrate the principle of a series of devices for wafers scale testing and have also implemented the ion implantation based refractive index change in integrated photonics devices for device trimming.

  13. Modification of polyvinyl alcohol surface properties by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Pukhova, I.V., E-mail: ivpuhova@mail.ru [National Research Tomsk State University, 36 Lenin Ave, Tomsk 634050 (Russian Federation); Institute of High Current Electronics, 2/3 Akademichesky Ave, Tomsk 634055 (Russian Federation); Kurzina, I.A. [National Research Tomsk State University, 36 Lenin Ave, Tomsk 634050 (Russian Federation); Savkin, K.P. [Institute of High Current Electronics, 2/3 Akademichesky Ave, Tomsk 634055 (Russian Federation); Laput, O.A. [National Research Tomsk Polytechnic University, 30 Lenin Ave, Tomsk 634050 (Russian Federation); Oks, E.M. [Institute of High Current Electronics, 2/3 Akademichesky Ave, Tomsk 634055 (Russian Federation)

    2017-05-15

    We describe our investigations of the surface physicochemical properties of polyvinyl alcohol modified by silver, argon and carbon ion implantation to doses of 1 × 10{sup 14}, 1 × 10{sup 15} and 1 × 10{sup 16} ion/cm{sup 2} and energies of 20 keV (for C and Ar) and 40 keV (for Ag). Infrared spectroscopy (IRS) indicates that destructive processes accompanied by chemical bond (−C=O) generation are induced by implantation, and X-ray photoelectron spectroscopy (XPS) analysis indicates that the implanted silver is in a metallic Ag3d state without stable chemical bond formation with polymer chains. Ion implantation is found to affect the surface energy: the polar component increases while the dispersion part decreases with increasing implantation dose. Surface roughness is greater after ion implantation and the hydrophobicity increases with increasing dose, for all ion species. We find that ion implantation of Ag, Ar and C leads to a reduction in the polymer microhardness by a factor of five, while the surface electrical resistivity declines modestly.

  14. Development of vertical compact ion implanter for gemstones applications

    Energy Technology Data Exchange (ETDEWEB)

    Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Wijaikhum, A. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science (Gems and Jewelry), Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D.; Tippawan, U.; Yu, L.D.; Singkarat, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2014-08-15

    Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

  15. Development of vertical compact ion implanter for gemstones applications

    Science.gov (United States)

    Intarasiri, S.; Wijaikhum, A.; Bootkul, D.; Suwannakachorn, D.; Tippawan, U.; Yu, L. D.; Singkarat, S.

    2014-08-01

    Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

  16. Investigation of corrosion and ion release from titanium dental implant

    Energy Technology Data Exchange (ETDEWEB)

    Ektessabi, A.M. (Graduate School of Engineering, Kyoto University, Kyoto (Japan)); Mouhyi, J.; Louvette, P.; Sennerby, L.

    1997-01-01

    A thin passive titanium dioxide, in its stoichiometric form, has a very high corrosion resistance, but the same conclusion can not be made on corrosion resistance of a surface which is not stoichiometrically titanium dioxide, or even a surface which is a composition of various elements and oxides. In practice, the implants available on the market have an oxide surface contaminated with other elements. The aim of this paper is to correlate clinical observations that show the deterioration of Ti made implants after certain period of insertion in the patients, and in vitro corrosion resistance of Ti implants with surface passive oxide layer. For this purpose, surface analysis of the retrieved failed implants were performed and in vivo animal experiments with relation to ion release from implants were done. Finally, on the basis of the clinical observation, in vivo animal test, and in vitro electrochemical corrosion test, a model is proposed to explain the corrosion and ion release from the Ti implant. (author)

  17. Bacterial adhesion on ion-implanted stainless steel surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Q. [Department of Mechanical Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom)]. E-mail: q.zhao@dundee.ac.uk; Liu, Y. [Department of Mechanical Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Wang, C. [Department of Mechanical Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Wang, S. [Department of Mechanical Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Peng, N. [Surrey Ion Beam Centre, University of Surrey, Surrey GU2 7XH (United Kingdom); Jeynes, C. [Surrey Ion Beam Centre, University of Surrey, Surrey GU2 7XH (United Kingdom)

    2007-08-31

    Stainless steel disks were implanted with N{sup +}, O{sup +} and SiF{sub 3} {sup +}, respectively at the Surrey Ion Beam Centre. The surface properties of the implanted surfaces were analyzed, including surface chemical composition, surface topography, surface roughness and surface free energy. Bacterial adhesion of Pseudomonas aeruginosa, Staphylococcus epidermidis and Staphylococcus aureus, which frequently cause medical device-associated infections was evaluated under static condition and laminar flow condition. The effect of contact time, growth media and surface properties of the ion-implanted steels on bacterial adhesion was investigated. The experimental results showed that SiF{sub 3} {sup +}-implanted stainless steel performed much better than N{sup +}-implanted steel, O{sup +}-implanted steel and untreated stainless steel control on reducing bacterial attachment under identical experimental conditions.

  18. Ion implantation induced nanotopography on titanium and bone cell adhesion

    Energy Technology Data Exchange (ETDEWEB)

    Braceras, Iñigo, E-mail: inigo.braceras@tecnalia.com [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Vera, Carolina; Ayerdi-Izquierdo, Ana [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Muñoz, Roberto [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); Lorenzo, Jaione; Alvarez, Noelia [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Maeztu, Miguel Ángel de [Private Practice, P° San Francisco, 43 A-1°, 20400 Tolosa (Spain)

    2014-08-15

    Graphical abstract: Titanium surfaces modified by inert ion implantation affect cell adhesion through modification of the nanotopography in the same dimensional range of that of human bone inorganic phases. - Highlights: • Inert ion implantation on Ti modifies surface nanotopography and bone cell adhesion. • Ion implantation can produce nanostructured surfaces on titanium in the very same range as of those of the mineral phase of the human bone. • Appropriate tool for studying the relevance of nanostructured surfaces on bone mineralization and implant osseointegration. • Ion implantation induced nanotopography have a statistically significant influence on bone cell adhesion. - Abstract: Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40–80 keV), fluence (1–2 e17 ion/cm{sup 2}) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted

  19. Improving Sustainability of Ion Implant Modules

    Science.gov (United States)

    Mayer, Jim

    2011-01-01

    Semiconductor fabs have long been pressured to manage capital costs, reduce energy consumption and increasingly improve efforts to recycle and recover resources. Ion implant tools have been high-profile offenders on all three fronts. They draw such large volumes of air for heat dissipation and risk reduction that historically, they are the largest consumer of cleanroom air of any process tool—and develop energy usage and resource profiles to match. This paper presents a documented approach to reduce their energy consumption and dramatically downsize on-site facilities support for cleanroom air manufacture and abatement. The combination produces significant capital expenditure savings. The case entails applying SAGS Type 1 (sub-atmospheric gas systems) toxic gas packaging to enable engineering adaptations that deliver the energy savings and cost benefits without any reduction in environmental health and safety. The paper also summarizes benefits as they relate to reducing a fabs carbon emission footprint (and longer range advantages relative to potential cap and trade programs) with existing technology.

  20. Enhancement of Ag nanoparticles concentration by prior ion implantation

    Science.gov (United States)

    Mu, Xiaoyu; Wang, Jun; Liu, Changlong

    2017-09-01

    Thermally grown SiO2 layer on Si substrates were singly or sequentially implanted with Zn or Cu and Ag ions at the same fluence of 2 × 1016/cm2. The profiles of implanted species, structure, and spatial distribution of the formed nanoparticles (NPs) have been characterized by the cross-sectional transmission electron microscope (XTEM) and Rutherford backscattering spectrometry (RBS). It is found that pre-implantation of Zn or Cu ions could suppress the self sputtering of Ag atoms during post Ag ion implantation, which gives rise to fabrication of Ag NPs with a high density. Moreover, it has also been demonstrated that the suppressing effect strongly depends on the applied energy and mobility of pre-implanted ions. The possible mechanism for the enhanced Ag NPs concentration has been discussed in combination with SRIM simulations. Both vacancy-like defects acting as the increased nucleation sites for Ag NPs and a high diffusivity of prior implanted ions in SiO2 play key roles in enhancing the deposition of Ag implants.

  1. SEM analysis of ion implanted SiC

    Energy Technology Data Exchange (ETDEWEB)

    Malherbe, Johan B., E-mail: johan.malherbe@up.ac.za [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Berg, N.G. van der; Botha, A.J.; Friedland, E.; Hlatshwayo, T.T.; Kuhudzai, R.J. [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Wendler, E.; Wesch, W. [Institut für Festkörperphysik, Friedrich-Schiller-Universität, 07743 Jena (Germany); Chakraborty, P. [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Silveira, E.F. da [Physics Department, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro (Brazil)

    2013-11-15

    SiC is a material used in two future energy production technologies, firstly as a photovoltaic layer to harness the UV spectrum in high efficient power solar cells, and secondly as a diffusion barrier material for radioactive fission products in the fuel elements of the next generation of nuclear power plants. For both applications, there is an interest in the implantation of reactive and non-reactive ions into SiC and their effects on the properties of the SiC. In this study 360 keV Ag{sup +}, I{sup +} and Xe{sup +} ions were separately implanted into 6H–SiC and in polycrystalline SiC at various substrate temperatures. The implanted samples were also annealed in vacuum at temperatures ranging from 900 °C to 1600 °C for various times. In recent years, there had been significant advances in scanning electron microscopy (SEM) with the introduction of an in-lens detector combined with field emission electron guns. This allows defects in solids, such as radiation damage created by the implanted ions, to be detected with SEM. Cross-sectional SEM images of 6H–SiC wafers implanted with 360 keV Ag{sup +} ions at room temperature and at 600 °C and then vacuum annealed at different temperatures revealed the implanted layers and their thicknesses. A similar result is shown of 360 keV I{sup +} ions implanted at 600 °C into 6H–SiC and annealed at 1600 °C. The 6H–SiC is not amorphized but remained crystalline when implanting at 600 °C. There are differences in the microstructure of 6H–SiC implanted with silver at the two temperatures as well as with reactive iodine ions. Voids (bubbles) are created in the implanted layers into which the precipitation of silver and iodine can occur after annealing of the samples. The crystallinity of the substrate via implantation temperature caused differences in the distribution and size of the voids. Implantation of xenon ions in polycrystalline SiC at 350 °C does not amorphize the substrate as is the case with room

  2. Ion dynamics in plasma compensation scheme

    Energy Technology Data Exchange (ETDEWEB)

    Timofeev, I.V.; Lotov, K.V. E-mail: lotov@inp.nsk.su

    2002-06-11

    In this paper the ability of a plasma to compensate beam-induced fields at the interaction point of muon colliders is discussed. Among numerous factors that limit beam and plasma parameters for which a given compensation degree can be achieved, one of the most important limitations (the motion of plasma ions) is analyzed in details. It is found that this limitation is determined by an instability of the relative motion of plasma electrons and ions. It is shown that discussed parameters of ultimate muon colliders fall outside the applicability area of plasma compensation.

  3. Ion Plasma Responses to External Electromagnetic Fields

    NARCIS (Netherlands)

    Naus, H.W.L.

    2010-01-01

    The response of ion plasmas to external radiation fields is investigated in a quantum mechanical formalism.We focus on the total electric field within the plasma. For general bandpass signals three frequency regions can be distinguished in terms of the plasma frequency. For low frequencies, the exte

  4. Bone tissue response to plasma-nitrided titanium implant surfaces

    Directory of Open Access Journals (Sweden)

    Emanuela Prado FERRAZ

    2015-02-01

    Full Text Available A current goal of dental implant research is the development of titanium (Ti surfaces to improve osseointegration. Plasma nitriding treatments generate surfaces that favor osteoblast differentiation, a key event to the process of osteogenesis. Based on this, it is possible to hypothesize that plasma-nitrided Ti implants may positively impact osseointegration. Objective The aim of this study was to evaluate the in vivo bone response to Ti surfaces modified by plasma-nitriding treatments. Material and Methods Surface treatments consisted of 20% N2 and 80% H2, 450°C and 1.5 mbar during 1 h for planar and 3 h for hollow cathode. Untreated surface was used as control. Ten implants of each surface were placed into rabbit tibiae and 6 weeks post-implantation they were harvested for histological and histomorphometric analyses. Results Bone formation was observed in contact with all implants without statistically significant differences among the evaluated surfaces in terms of bone-to-implant contact, bone area between threads, and bone area within the mirror area. Conclusion Our results indicate that plasma nitriding treatments generate Ti implants that induce similar bone response to the untreated ones. Thus, as these treatments improve the physico-chemical properties of Ti without affecting its biocompatibility, they could be combined with modifications that favor bone formation in order to develop new implant surfaces.

  5. Bone tissue response to plasma-nitrided titanium implant surfaces.

    Science.gov (United States)

    Ferraz, Emanuela Prado; Sverzut, Alexander Tadeu; Freitas, Gileade Pereira; Sá, Juliana Carvalho; Alves, Clodomiro; Beloti, Marcio Mateus; Rosa, Adalberto Luiz

    2015-01-01

    A current goal of dental implant research is the development of titanium (Ti) surfaces to improve osseointegration. Plasma nitriding treatments generate surfaces that favor osteoblast differentiation, a key event to the process of osteogenesis. Based on this, it is possible to hypothesize that plasma-nitrided Ti implants may positively impact osseointegration. Objective The aim of this study was to evaluate the in vivo bone response to Ti surfaces modified by plasma-nitriding treatments. Material and Methods Surface treatments consisted of 20% N2 and 80% H2, 450°C and 1.5 mbar during 1 h for planar and 3 h for hollow cathode. Untreated surface was used as control. Ten implants of each surface were placed into rabbit tibiae and 6 weeks post-implantation they were harvested for histological and histomorphometric analyses. Results Bone formation was observed in contact with all implants without statistically significant differences among the evaluated surfaces in terms of bone-to-implant contact, bone area between threads, and bone area within the mirror area. Conclusion Our results indicate that plasma nitriding treatments generate Ti implants that induce similar bone response to the untreated ones. Thus, as these treatments improve the physico-chemical properties of Ti without affecting its biocompatibility, they could be combined with modifications that favor bone formation in order to develop new implant surfaces.

  6. Effect of Fe ion implantation on tribological properties and Raman spectra characteristics of diamond-like carbon film

    Institute of Scientific and Technical Information of China (English)

    JIA Wen-Bao; SUN Zhuo

    2004-01-01

    Fe ions in the fluence range of 2 × 1015 to 1×1017 cm -2 were implanted into diamond-like carbon (DLC) thin film of 100 nm thick, which were deposited on silicon substrate by plasma enhanced chemical vapor deposition.Effects of Fe ion implantation on microstructure and friction coefficient of the DLC were studied. With increasing Fe ion fluence, friction coefficient of the DLC film increased as compared with that of DLC without implantation, and then decreased. The Raman spectra characteristics also show a dependence on the Fe ion fluence. With increasing the ion fluence, the sp2 bonding increased in the DLC film, resulting in the decrease of friction coefficient of the film after implantation. Substantial surface roughness was also measured.

  7. Hydrogenation of zirconium film by implantation of hydrogen ions

    Science.gov (United States)

    Yang, LIU; Kaihong, FANG; Huiyi, LV; Jiwei, LIU; Boyu, WANG

    2017-03-01

    In order to understand the drive-in target in a D–D type neutron generator, it is essential to study the mechanism of the interaction between hydrogen ion beams and the hydrogen-absorbing metal film. The present research concerns the nucleation of hydride within zirconium film implanted with hydrogen ions. Doses of 30 keV hydrogen ions ranging from 4.30 × 1017 to 1.43 × 1018 ions cm‑2 were loaded into the zirconium film through the ion beam implantation technique. Features of the surface morphology and transformation of phase structures were investigated with scanning electron microscopy, atomic force microscopy and x-ray diffraction. Confirmation of the formation of δ phase zirconium hydride in the implanted samples was first made by x-ray diffraction, and the different stages in the gradual nucleation and growth of zirconium hydride were then observed by atomic force microscope and scanning electron microscopy.

  8. Ion transport from plasma ion source at ISOLTRAP

    CERN Document Server

    Steinsberger, Timo Pascal

    2017-01-01

    In this report, my work as CERN Summer Student at the ISOLTRAP experiment at ISOLDE is described. A new plasma ion source used as oine source for calibration and implemented before my arrival was commissioned and transportation settings for the produced ions to the ion traps were found. The cyclotron frequencies of 40Ar and the xenon isotopes 129-132Xe were measured using time-of-flight and phase-imaging ion-cyclotron-resonance mass spectroscopy.

  9. Effects of COOH+ ion implantation on hemocompatibility of polypropylene

    Institute of Scientific and Technical Information of China (English)

    LI; Dejun(李德军); NIU; Lifang(牛丽芳)

    2002-01-01

    Carboxyl ion (COOH+) implantation was performed at 50 keV with different fluences for polypropylene. Hemocompatibility tests show that blood coagulation time and recalcification time of polypropylene were enhanced significantly with the increasing fluence. At the same time, the human endothelial cells grown on the surface of the implanted samples exhibited normal cellular growth and morphology. X-ray photoelectron spectroscopy and water contact angle analysis showed that COOH+ ion implantation rearranges chemical bonds and produces some new polar O-containing groups on the surface. The formation of polar functional groups, together with increase of roughness, induced an increase in hydrophilicity, which in turn improved the surface hemocompatibility of polypropylene.

  10. Characterization of surface enhancement of carbon ion-implanted TiN coatings by metal vapor vacuum arc ion implantation

    CERN Document Server

    Chang, C L

    2002-01-01

    The modification of the surfaces of energetic carbon-implanted TiN films using metal vapor vacuum arc (MEVVA) ion implantation was investigated, by varying ion energy and dose. The microhardness, microstructure and chemical states of carbon, implanted on the surface layer of TiN films, were examined, as functions of ion energy and dose, by nanoindenter, transmission electron microscopy, Auger electron spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction. Results revealed that the microhardness increased from 16.8 up to 25.3 GPa and the friction coefficient decreased to approximately 0.2, depending on the implanted ion energy and dose. The result is attributed to the new microcrystalline phases of TiCN and TiC formed, and carbon concentration saturation of the implanted matrix can enhance the partial mechanical property of TiN films after MEVVA treatment. The concentration distribution, implantation depth and chemical states of carbon-implanted TiN coatings depended strongly on the ion dose and...

  11. Development of industrial ion implantation and ion assisted coating processes: A perspective

    Science.gov (United States)

    Legg, Keith O.; Solnick-Legg, Hillary

    1989-04-01

    Ion beam processes have gone through a series of developmental stages, from being the mainstay of the semiconductor industry for production of integrated circuits, to new commercial processes for biomedical, aerospace and other industries. Although research is still continuing on surface modification using ion beam methods, ion implantation and ion assisted coatings for treatment of metals, ceramics, polymers and composites must now be considered viable industrial processes of benefit in a wide variety of applications. However, ion implantation methods face various barriers to acceptability, in terms not only of other surface treatment processes, but for implantation itself. This paper will discuss some of the challenges faced by a small company whose primary business is development and marketing of ion implantation and ion-assisted coating processes.

  12. Surface modification of TiO2 coatings by Zn ion implantation for improving antibacterial activities

    Indian Academy of Sciences (India)

    Xiaobing Zhao; Jiashen Yang; Jing You

    2016-02-01

    TiO$_2$ coating has been widely applied in orthopaedic and dental implants owing to its excellent mechanical and biological properties. However, one of the biggest complications of TiO$_2$ coating is implant-associated infections. The aim of this work is to improve the antibacterial activity of plasma-sprayed TiO$_2$ coatings by plasma immersion ion implantation (PIII) using zinc (Zn) ions. Results indicate that the as-sprayed TiO$_2$ coating is mainly composed of rutile phase. Zn-PIII modification does not change the phase compositions and the surface morphologies of TiO$_2$ coatings, while change their hydrophilicity. Zn-implanted TiO$_2$ coatings can inhibit the growth of Staphylococcus aureus (S. aureus) and Escherichia coli (E. coli), and the ability to inhibit S. aureus is greater than that to E. coli. Zn ion release and reactive oxygen species may be attributed to improving the antibacterial activity of TiO$_2$ coating. Therefore, Zn-PIII TiO$_2$ coatings on titanium suggest promising candidates for orthopaedic and dental implants.

  13. Friction and wear properties of N+ ion implanted nylon 1010

    Institute of Scientific and Technical Information of China (English)

    XIONG Dang-sheng

    2004-01-01

    The PA1010 was implanted with 450 keV N+ ions to three doses of 5× 1014 cm-2 , 2.5× 1015 cm-2 and 1.25 × 1016 cm-2. The friction and wear behaviors of the ion implanted PA1010 disks rubbing with two ceramic (ZrO2 and Si3N4) balls were studied using a pin-on-disk tribometer under dry friction. The results shows that the wear resistance of PA1010 is increased with the increasing implantation doses. The adhesion, plastic deformation and plow groove are wearing mechanisms for un-implanted PA1010, while abrasive wear for implanted PA1010.

  14. Surface Engineering of Nanostructured Titanium Implants with Bioactive Ions.

    Science.gov (United States)

    Kim, H-S; Kim, Y-J; Jang, J-H; Park, J-W

    2016-05-01

    Surface nanofeatures and bioactive ion chemical modification are centrally important in current titanium (Ti) oral implants for enhancing osseointegration. However, it is unclear whether the addition of bioactive ions definitively enhances the osteogenic capacity of a nanostructured Ti implant. We systematically investigated the osteogenesis process of human multipotent adipose stem cells triggered by bioactive ions in the nanostructured Ti implant surface. Here, we report that bioactive ion surface modification (calcium [Ca] or strontium [Sr]) and resultant ion release significantly increase osteogenic activity of the nanofeatured Ti surface. We for the first time demonstrate that ion modification actively induces focal adhesion development and expression of critical adhesion–related genes (vinculin, talin, and RHOA) of human multipotent adipose stem cells, resulting in enhanced osteogenic differentiation on the nanofeatured Ti surface. It is also suggested that fibronectin adsorption may have only a weak effect on early cellular events of mesenchymal stem cells (MSCs) at least in the case of the nanostructured Ti implant surface incorporating Sr. Moreover, results indicate that Sr overrides the effect of Ca and other important surface factors (i.e., surface area and wettability) in the osteogenesis function of various MSCs (derived from human adipose, bone marrow, and murine bone marrow). In addition, surface engineering of nanostructured Ti implants using Sr ions is expected to exert additional beneficial effects on implant bone healing through the proper balancing of the allocation of MSCs between adipogenesis and osteogenesis. This work provides insight into the future surface design of Ti dental implants using surface bioactive ion chemistry and nanotopography.

  15. Fe doped Magnetic Nanodiamonds made by Ion Implantation.

    Science.gov (United States)

    Chen, ChienHsu; Cho, I C; Jian, Hui-Shan; Niu, H

    2017-02-09

    Here we present a simple physical method to prepare magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are embedded into NDs through Fe ion-implantation and the crystal structure of NDs are recovered by thermal annealing. The results of TEM and Raman examinations indicated the crystal structure of the Fe implanted NDs is recovered completely. The SQUID-VSM measurement shows the Fe-NDs possess room temperature ferromagnetism. That means the Fe atoms are distributed inside the NDs without affecting NDs crystal structure, so the NDs can preserve the original physical and chemical properties of the NDs. In addition, the ion-implantation-introduced magnetic property might make the NDs to become suitable for variety of medical applications.

  16. Statistical 3D damage accumulation model for ion implant simulators

    CERN Document Server

    Hernandez-Mangas, J M; Enriquez, L E; Bailon, L; Barbolla, J; Jaraiz, M

    2003-01-01

    A statistical 3D damage accumulation model, based on the modified Kinchin-Pease formula, for ion implant simulation has been included in our physically based ion implantation code. It has only one fitting parameter for electronic stopping and uses 3D electron density distributions for different types of targets including compound semiconductors. Also, a statistical noise reduction mechanism based on the dose division is used. The model has been adapted to be run under parallel execution in order to speed up the calculation in 3D structures. Sequential ion implantation has been modelled including previous damage profiles. It can also simulate the implantation of molecular and cluster projectiles. Comparisons of simulated doping profiles with experimental SIMS profiles are presented. Also comparisons between simulated amorphization and experimental RBS profiles are shown. An analysis of sequential versus parallel processing is provided.

  17. Statistical 3D damage accumulation model for ion implant simulators

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Mangas, J.M. E-mail: jesman@ele.uva.es; Lazaro, J.; Enriquez, L.; Bailon, L.; Barbolla, J.; Jaraiz, M

    2003-04-01

    A statistical 3D damage accumulation model, based on the modified Kinchin-Pease formula, for ion implant simulation has been included in our physically based ion implantation code. It has only one fitting parameter for electronic stopping and uses 3D electron density distributions for different types of targets including compound semiconductors. Also, a statistical noise reduction mechanism based on the dose division is used. The model has been adapted to be run under parallel execution in order to speed up the calculation in 3D structures. Sequential ion implantation has been modelled including previous damage profiles. It can also simulate the implantation of molecular and cluster projectiles. Comparisons of simulated doping profiles with experimental SIMS profiles are presented. Also comparisons between simulated amorphization and experimental RBS profiles are shown. An analysis of sequential versus parallel processing is provided.

  18. Optical attenuation in ion-implanted silicon waveguide racetrack resonators.

    Science.gov (United States)

    Doylend, J K; Jessop, P E; Knights, A P

    2011-08-01

    The optical absorption at wavelengths near 1550 nm has been quantified as a function of annealing temperature in ion-implanted silicon-on-insulator racetrack resonators. The variation of the output characteristics of the bus waveguide versus the concentration of implantation-induced lattice disorder in the ring is used to develop a novel method for the determination of the coupling and round-trip loss of the resonator, independently. This experimental procedure has general applicability for the determination of these parameters. Significant propagation loss is found to persist following annealing at temperatures previously observed to remove the majority of ion implantation damage. It is suggested that these annealing characteristics are a consequence of an ion implantation range which is greater than the silicon waveguide layer thickness.

  19. Fe doped Magnetic Nanodiamonds made by Ion Implantation

    Science.gov (United States)

    Chen, Chienhsu; Cho, I. C.; Jian, Hui-Shan; Niu, H.

    2017-02-01

    Here we present a simple physical method to prepare magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are embedded into NDs through Fe ion-implantation and the crystal structure of NDs are recovered by thermal annealing. The results of TEM and Raman examinations indicated the crystal structure of the Fe implanted NDs is recovered completely. The SQUID-VSM measurement shows the Fe-NDs possess room temperature ferromagnetism. That means the Fe atoms are distributed inside the NDs without affecting NDs crystal structure, so the NDs can preserve the original physical and chemical properties of the NDs. In addition, the ion-implantation-introduced magnetic property might make the NDs to become suitable for variety of medical applications.

  20. Surface Modification of Aerospace Flywheel-Bearings by Nitrogen Plasma Immersion Ion Implantation%空间飞轮轴承等离子体浸没离子注入氮层性能研究

    Institute of Scientific and Technical Information of China (English)

    李兆光; 张人佶; 杨宇; 王浪平

    2011-01-01

    研究了氮等离子体浸没离子注入(PⅢ)技术处理后空间飞轮轴承内圈的摩擦学性能.通过原子力显微镜分析改性前后试样表面形貌,利用X射线电子能谱分析试样表面成分及结构,通过显微硬度计测量改性前后及不同注入时间下试样表面硬度,考察改性前后试样摩擦系数变化情况.结果表明,空间飞轮轴承内圈进行表面注氮后,表面形成Cr-N化合物,形成第二相及固溶强化使得试样表面硬度显著增加,摩擦系数明显减小,耐磨性增加,轴承组件工作电流明显减小.%The surfaces of the bearings, used in aerospace flywheels, were modified by nitrogen plasma immersion ion implantation (PⅢ),to improve its mechanical properties, such as wear resistance, surface hardness, and friction coefficients. The impacts of the coating conditions on the microstructures and mechanical properties was characterized with Xray photoelectron spectroscopy, atomic force microscopy and conventional probes. The results show that the surface modification of the bearings by PⅢ significantly improves its mechanical properties. For instance, formation of the Cr-N compound,the second phase and solid phase,considerably increased its surface micro-hardness and wear-resistance, and reduced both its surface friotion coefficients and the rotating current of the bearing

  1. Hydrogen-induced defects in ion-implanted Si

    Science.gov (United States)

    Socher, S.; Lavrov, E. V.; Weber, J.

    2012-09-01

    Single crystalline silicon implanted with 28Si ions and subsequently hydrogenated from an rf plasma at 200∘C is studied by Raman and photoluminescence spectroscopy. A broad Raman band at 3830 cm-1 previously assigned to the rovibrational transitions of hydrogen molecules trapped in Si multivacancies [Ishioka , Phys. Rev. BPRBMDO1098-012110.1103/PhysRevB.60.10852 60, 10852 (1999)] reveals a complex line shape at 60 K. In contrast, our study correlates the Raman band to three different localized traps for hydrogen molecules which are identified from the dependence on the ion dose and annealing behavior. Each of these traps, which is saturated with H2, gives rise to three Raman transitions due to para- and ortho-H2. The H2 signals are shown to correlate with the Si-H vibrational modes at 1888, 1930, and 1964 cm-1. Ortho to para conversion rates of H2 at 77 K and room temperature were found to be 62±15 and 8±2 h, respectively.

  2. Chaotic ion motion in magnetosonic plasma waves

    Science.gov (United States)

    Varvoglis, H.

    1984-01-01

    The motion of test ions in a magnetosonic plasma wave is considered, and the 'stochasticity threshold' of the wave's amplitude for the onset of chaotic motion is estimated. It is shown that for wave amplitudes above the stochasticity threshold, the evolution of an ion distribution can be described by a diffusion equation with a diffusion coefficient D approximately equal to 1/v. Possible applications of this process to ion acceleration in flares and ion beam thermalization are discussed.

  3. Multifunctions of dual Zn/Mg ion co-implanted titanium on osteogenesis, angiogenesis and bacteria inhibition for dental implants.

    Science.gov (United States)

    Yu, Yiqiang; Jin, Guodong; Xue, Yang; Wang, Donghui; Liu, Xuanyong; Sun, Jiao

    2017-02-01

    In order to improve the osseointegration and long-term survival of dental implants, it is urgent to develop a multifunctional titanium surface which would simultaneously have osteogeneic, angiogeneic and antibacterial properties. In this study, a potential dental implant material-dual Zn/Mg ion co-implanted titanium (Zn/Mg-PIII) was developed via plasma immersion ion implantation (PIII). The Zn/Mg-PIII surfaces were found to promote initial adhesion and spreading of rat bone marrow mesenchymal stem cells (rBMSCs) via the upregulation of the gene expression of integrin α1 and integrin β1. More importantly, it was revealed that Zn/Mg-PIII could increase Zn(2+) and Mg(2+) concentrations in rBMSCs by promoting the influx of Zn(2+) and Mg(2+) and inhibiting the outflow of Zn(2+), and then could enhance the transcription of Runx2 and the expression of ALP and OCN. Meanwhile, Mg(2+) ions from Zn/Mg-PIII increased Mg(2+) influx by upregulating the expression of MagT1 transporter in human umbilical vein endothelial cells (HUVECs), and then stimulated the transcription of VEGF and KDR via activation of hypoxia inducing factor (HIF)-1α, thus inducing angiogenesis. In addition to this, it was discovered that zinc in Zn/Mg-PIII had certain inhibitory effects on oral anaerobic bacteria (Pg, Fn and Sm). Finally, the Zn/Mg-PIII implants were implanted in rabbit femurs for 4 and 12weeks with Zn-PIII, Mg-PIII and pure titanium as controls. Micro-CT evaluation, sequential fluorescent labeling, histological analysis and push-out test consistently demonstrated that Zn/Mg-PIII implants exhibit superior capacities for enhancing bone formation, angiogenesis and osseointegration, while consequently increasing the bonding strength at bone-implant interfaces. All these results suggest that due to the multiple functions co-produced by zinc and magnesium, rapid osseointegration and sustained biomechanical stability are enhanced by the novel Zn/Mg-PIII implants, which have the potential

  4. Spherical solitons in ion-beam plasma

    Energy Technology Data Exchange (ETDEWEB)

    Das, G.C.; Ibohanbi Singh, K. (Manipur Univ., Imphal (India). Dept. of Mathematics)

    1991-01-01

    By using the reductive perturbation technique, the soliton solution of an ion-acoustic wave radially ingoing in a spherically bounded plasma consisting of ions and ion-beams with multiple electron temperatures is obtained. In sequel to the earlier investigations, the solitary waves are studied as usual through the derivation of a modified Korteweg-de Vries (K-dV) equation in different plasma models arising due to the variation of the isothermality of the plasmas. The characteristics of the solitons are finally compared with those of the planar and the cylindrical solitons. (orig.).

  5. Transport properties of ion implanted poly (p-phenylene vinylene)

    Energy Technology Data Exchange (ETDEWEB)

    Lucas, B. (LEPOFI, Faculte des Sciences, 87 Limoges (France)); Ratier, B. (LEPOFI, Faculte des Sciences, 87 Limoges (France)); Moliton, A. (LEPOFI, Faculte des Sciences, 87 Limoges (France)); Moreau, C. (Cavendish Lab., Univ. of Cambridge, Cambridge (United Kingdom)); Friend, R.H. (Cavendish Lab., Univ. of Cambridge, Cambridge (United Kingdom))

    1993-04-19

    We have studied the effect of ion implantation on transport properties (thermopower S, dc conductivity [sigma], ac conductivity [sigma][sub T]) of poly (p-phenylene vinylene). We have noticed that the thermopower sign is characteristic of the implanted ion (S > 0 for halogen, S < 0 for alkali) at low implantation energy (E [<=] 50 keV). The slope of [sigma] = f (T[sup -1]) varies, with values for activation energy between 32 meV (D = 10[sup 16] ions/cm[sup 2]) and 57 meV (D = 10[sup 15] ions/cm[sup 2]): the activation energy falls as the fluence increases in the case of implantation at low energy (E [<=] 50 keV). AC conductivity has been studied as a function of frequency v (v = 20 Hz - 1 MHz) and of temperatures T (T = 100 K - 380 K). For lower fluences (D = 2.10[sup 15] ions/cm[sup 2]), at low temperatures the ac conductivity shows hopping behaviour, switching to activated behaviour at higher temperatures. For higher fluences (D = 2.10[sup 16] ions/cm[sup 2]) the main processes are thermally activated. Thus for a high implantation energy (E = 250 keV), the related conductivity is less thermally activated and the curve [sigma][sub T] = f (1/T) slightly depends on temperature (hopping mechanism). (orig.)

  6. Plasma ion stratification by weak planar shocks

    Science.gov (United States)

    Simakov, Andrei N.; Keenan, Brett D.; Taitano, William T.; Chacón, Luis

    2017-09-01

    We derive fluid equations for describing steady-state planar shocks of a moderate strength ( 0 shock Mach number) propagating through an unmagnetized quasineutral collisional plasma comprising two separate ion species. In addition to the standard fluid shock quantities, such as the total mass density, mass-flow velocity, and electron and average ion temperatures, the equations describe shock stratification in terms of variations in the relative concentrations and temperatures of the two ion species along the shock propagation direction. We have solved these equations analytically for weak shocks ( 0 shocks, and they have been used to verify kinetic simulations of shocks in multi-ion plasmas.

  7. Surface modification of commercial tin coatings by carbon ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, L.J.; Sood, D.K.; Manory, R.R. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    Commercial TiN coatings of about 2 {mu}m thickness on high speed steel substrates were implanted at room temperature with 95 keV carbon ions at nominal doses between 1 x 10{sup 17} - 8x10{sup 17} ions cm{sup -2}. Carbon ion implantation induced a significant improvement in ultramicrohardness, friction coefficient and wear properties. The surface microhardness increases monotonically by up to 115% until a critical dose is reached. Beyond this dose the hardness decreases, but remains higher than that of unimplanted sample. A lower friction coefficient and a longer transition period towards a steady state condition were obtained by carbon ion implantation. The changes in tribomechanical properties are discussed in terms of radiation damage and possible formation of a second phase rich in carbon. 6 refs., 3 figs.

  8. Passive Mechanisms of Surfaces Produced by Ion Beam Mixing and Ion Implantation

    Science.gov (United States)

    1990-05-01

    34 evaporated thin film of several hundreds to thousands angstroms thickness is induced to intermix with the substrate using the collisional cascades...behavior of the ion implanted samples was silar to that of Al and the pitting potentials of the ion implanted samples ere 115 to 155 mV higher than that of...state so that the desired mixed oxide films were not formed. Ion beam mixing did impart additional stability compared to as-deposited samples since the

  9. Terahertz generation from Cu ion implantation into lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yuhua, E-mail: wyh61@163.com [Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan university of Science and Technology, Wuhan 430081 (China); Wang, Ruwu; Yuan, Jie [Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan university of Science and Technology, Wuhan 430081 (China); Wang, Yumei [Department of Nephrology, Union Hospital, Tongji Medical College, Huazhong University of Science and Technology, Wuhan 430022 (China)

    2014-03-15

    In this letter, the authors present first observation of terahertz generation from Cu implantation of lithium niobate crystal substrate. Lithium niobate single crystal is grown by Czochralski method. Metal nanoparticles synthesized by Cu ion implantation were implanted into lithium niobate single crystal using metal vapor vacuum arc (MEVVA) ion source. 1 kHz, 35 fs laser pulse centred at 800 nm was focused onto the samples. The supercontinuum spectra of the sample are obtained. Terahertz was generated via this kind of sample and investigated using the electro-optical sampling technique. The findings suggest that under the investigated implantation parameter, a strong spectral component in excess of 0.46 THz emission was found from Cu ion implantation of lithium niobate. -- Highlights: • We first observation of terahertz generation from Cu implantation of lithium niobate crystal substrate. • Lithium niobate single crystal is grown by Czochralski method. Cu nanoparticles in lithium niobate have been formed by using MEVVA ion source. • The THz bandwidth and center from this kind of sample were determined.

  10. High temperature annealing studies of strontium ion implanted glassy carbon

    Energy Technology Data Exchange (ETDEWEB)

    Odutemowo, O.S., E-mail: u12052613@tuks.co.za [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Malherbe, J.B.; Prinsloo, L.; Langa, D.F. [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Wendler, E. [Institut für Festkörperphysik, Friedrich-Schiller University, Jena (Germany)

    2016-03-15

    Glassy carbon samples were implanted with 200 keV strontium ions to a fluence of 2 × 10{sup 16} ions/cm{sup 2} at room temperature. Analysis with Raman spectroscopy showed that ion bombardment amorphises the glassy carbon structure. Partial recovery of the glassy carbon structure was achieved after the implanted sample was vacuum annealed at 900 °C for 1 h. Annealing the strontium ion bombarded sample at 2000 °C for 5 h resulted in recovery of the glassy carbon substrate with the intensity of the D peak becoming lower than that of the pristine glassy carbon. Rutherford backscattering spectroscopy (RBS) showed that the implanted strontium diffused towards the surface of the glassy carbon after annealing the sample at 900 °C. This diffusion was also accompanied by loss of the implanted strontium. Comparison between the as-implanted and 900 °C depth profiles showed that less than 30% of the strontium was retained in the glassy carbon after heat treatment at 900 °C. The RBS profile after annealing at 2000 °C indicated that no strontium ions were retained after heat treatment at this temperature.

  11. High temperature annealing studies of strontium ion implanted glassy carbon

    Science.gov (United States)

    Odutemowo, O. S.; Malherbe, J. B.; Prinsloo, L.; Langa, D. F.; Wendler, E.

    2016-03-01

    Glassy carbon samples were implanted with 200 keV strontium ions to a fluence of 2 × 1016 ions/cm2 at room temperature. Analysis with Raman spectroscopy showed that ion bombardment amorphises the glassy carbon structure. Partial recovery of the glassy carbon structure was achieved after the implanted sample was vacuum annealed at 900 °C for 1 h. Annealing the strontium ion bombarded sample at 2000 °C for 5 h resulted in recovery of the glassy carbon substrate with the intensity of the D peak becoming lower than that of the pristine glassy carbon. Rutherford backscattering spectroscopy (RBS) showed that the implanted strontium diffused towards the surface of the glassy carbon after annealing the sample at 900 °C. This diffusion was also accompanied by loss of the implanted strontium. Comparison between the as-implanted and 900 °C depth profiles showed that less than 30% of the strontium was retained in the glassy carbon after heat treatment at 900 °C. The RBS profile after annealing at 2000 °C indicated that no strontium ions were retained after heat treatment at this temperature.

  12. Ion implantation phenomena in 4H-silicon carbide

    CERN Document Server

    Phelps, Gordon James

    2003-01-01

    Silicon Carbide is a promising wide band gap semiconductor with many new properties yet to be established and investigated. Ion implantation is the dominant method of incorporating dopant materials into the Silicon Carbide crystalline structure for electronic device fabrication. The implantation process of dopants into Silicon Carbide, both theoretical and practical, is described in this Thesis. Additional fabrication process steps, such as annealing, and their implications are also described. To gain further insight into the process of ion implantation into Silicon Carbide, the detailed design of a special test die is discussed. The aim of the special test die was to obtain general information such as implanted dopant sheet resistivity and to test a novel bipolar transistor design. The fabrication steps involved for the special test die are discussed in detail. The results from the special test die take the form of specific electrical measurements, together with detailed visual observations provided by a sca...

  13. Ion implantation of diamond: Damage, doping, and lift-off

    Energy Technology Data Exchange (ETDEWEB)

    Parikh, N.R.; McGucken, E.; Swanson, M.L. [North Carolina Univ., Chapel Hill, NC (United States). Dept. of Physics and Astronomy; Hunn, J.D.; White, C.W.; Zuhr, R.A. [Oak Ridge National Lab., TN (United States)

    1993-09-01

    In order to make good quality economical diamond electronic devices, it is essential to grow films and to dope these films to obtain n- and p- type conductivity. This review talk discuss first doping by ion implantation plus annealing of the implantation damage, and second flow to make large area single crystal diamonds. C implantation damage below an estimated Frenkel defect concentration of 7% could be recovered almost completely by annealing at 950C. For a defect concentration between 7 and 10%, a stable damage form of diamond (``green diamond``) was formed by annealing. At still higher damage levels, the diamond graphitized. To introduce p-type doping, we have co-implanted B and C into natural diamond at 77K, followed by annealing up to 1100C. The resulting semiconducting material has electrical properties similar to those of natural B-doped diamond. To create n-type diamond, we have implanted Na{sup +}, P+ and As{sup +} ions and have observed semiconducting behavior. This has been compared with carbon or noble element implantation, in an attempt to isolate the effect of radiation damage. Recently, in order to obtain large area signal crystals, we have developed a novel technique for removing thin layers of diamond from bulk or homoepitaxial films. This method consists of ion implantation, followed by selective etching. High energy (4--5 MeV) implantation of carbon or oxygen ions creates a well-defined layer of damaged diamond buried at a controlled depth. This layer is graphitized and selectivity etched either by heating at 550C in an oxygen ambient or by electrolysis. This process successfully lifts off the diamond plate above the graphite layer. The lift-off method, combined with well-established homoepitaxial growth processes, has potential for fabrication of large area single-crystal diamond sheets.

  14. N + surface doping on nanoscale polymer fabrics via ion implantation

    Science.gov (United States)

    Ho Wong, Kenneth Kar; Zinke-Allmang, Martin; Wan, Wankei

    2006-08-01

    Non-woven poly(vinyl alcohol) (PVA) fabrics composed of small diameter (∼110 nm) fibers have been spun by an electrospinning technique and then have been modified by ion implantation. 1.7 MeV N+ ion implantation with a dose of 1.2 × 1016 ions/cm2 was applied on the fabrics through a metal foil at room temperature. By using scanning electron microscopy (SEM), no surface morphology degradation has been observed on the fabric after the ion beam treatment. The diameter of the fibers has shrunk by 30% to about 74 nm. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) show that nitrogen surface doping was achieved and the formation of two new functional chemical groups (N-Cdbnd O and C-N) in the PVA is observed.

  15. Synthesis of copper nanoparticles in polycarbonate by ion implantation

    Indian Academy of Sciences (India)

    Annu Sharma; Suman Bahniwal; Sanjeev Aggarwal; S Chopra; D Kanjilal

    2011-07-01

    Copper nanoparticles have been synthesized in polycarbonate by 75 KeV Cu– ion implantation with various doses ranging from 6.4 × 1015 to 1.6 × 1017 ions/cm2 with a beam current density of 800 nA/cm2. The composites formed were structurally characterized using Ultraviolet-Visible (UV-Visible) absorption spectroscopy. The appearance of particle plasmon resonance peak, characteristic of copper nanoparticles at 603 nm in absorption spectra of polycarbonate implanted to a dose of 1.6 × 1017 ions/cm2, indicates towards the formation of copper nanoparticles in polycarbonate. Transmission electron microscopy further confirms the formation of copper nanoparticles having size ∼ 3.15 nm. The formation of copper nanoparticles in the layers carbonized by Cu– implantation has been discussed. The synthesized copper-polycarbonate nanocomposite has been found to be more conducting than polycarbonate as ascertained using current–voltage characteristics.

  16. Ion implantation for manufacturing bent and periodically bent crystals

    Energy Technology Data Exchange (ETDEWEB)

    Bellucci, Valerio; Camattari, Riccardo; Guidi, Vincenzo, E-mail: guidi@fe.infn.it; Mazzolari, Andrea; Paternò, Gianfranco [Department of Physics and Earth Sciences, University of Ferrara, Via Saragat 1/c, 44122 Ferrara, Italy and INFN, Section of Ferrara (Italy); Mattei, Giovanni, E-mail: giovanni.mattei@unipd.it; Scian, Carlo [Department of Physics and Astronomy Galileo Galilei, University of Padova, Via Marzolo 8, 35131 Padova (Italy); Lanzoni, Luca [Dipertimento di Economia e Tecnologia, Università degli Studi della Repubblica di San Marino, Salita alla Rocca, 44, 47890 San Marino Città (San Marino)

    2015-08-10

    Ion implantation is proposed to produce self-standing bent monocrystals. A Si sample 0.2 mm thick was bent to a radius of curvature of 10.5 m. The sample curvature was characterized by interferometric measurements; the crystalline quality of the bulk was tested by X-ray diffraction in transmission geometry through synchrotron light at ESRF (Grenoble, France). Dislocations induced by ion implantation affect only a very superficial layer of the sample, namely, the damaged region is confined in a layer 1 μm thick. Finally, an elective application of a deformed crystal through ion implantation is here proposed, i.e., the realization of a crystalline undulator to produce X-ray beams.

  17. Ion current extracted from a self ignition plasma around the target immersed in a pulsed rf ICP methane plasma

    Science.gov (United States)

    Tanaka, Takeshi; Watanabe, Satoshi; Mizuno, Giichiro; Takagi, Toshinori; Yoshida, Mitsuhiro; Horibe, Hiroshi; Yukimura, Ken

    2003-05-01

    When a pulsed voltage is applied to a target immersed in plasma, the surrounding medium of the target is self-ignited under an appropriate discharge condition. For a three-dimensional substrate, ion implantation and deposition of the plasma species are promising to be uniformly attained by the self-ignition plasma. A retained dose of conformal ion implantation may increase with the self-ignition plasma generated in the target-immersed plasma. Ion are extracted from both the target-immersed plasma and the self-ignition plasma. In this research, a stainless steel target with a diameter of 140 mm and a thickness of 18 mm was immersed in a pulsed inductively coupled methane plasma to which a pulse voltage of -400 V to -10 kV with a width of 12 μs was repeatedly applied. The self-ignition plasma was generated at the voltage higher than about -1.2 kV. It was found that the shape of the current waveform changes by varying the applied voltage due to the change of the current from the self-ignition plasma.

  18. Mass flow facilitates tungsten blistering under 60 keV helium ion implantation

    Science.gov (United States)

    Han, Wenjia; Yu, Jiangang; Chen, Zhe; Lu, Guanghong; Zhu, Kaigui

    2017-07-01

    Gaseous ion implantation induces displacement damage and gaseous atom uptake in the target material and is widely adopted to simulate plasma-material interaction in fusion devices. Here we report an observation of tungsten blistering with large plastic deformation under 60 keV helium ion implantation at room temperature. The near-surface morphology and microstructure analyses suggest more than 50% plastic elongation and breakdown of lattice periodicity in the blister caps. We propose that collision cascades and high-concentration helium atoms not only greatly modify the tungsten microstructure, but also enhance mass flow in terms of point defect diffusion in blister caps. The mass flow ultimately aggravates the relaxation of stresses in the tungsten surface and facilitates tungsten blistering during high-energy gaseous ion implantation. We sketch out the blistering process and stress the vital importance of dynamic processes in the response of plasma-facing materials subjected to low-energy plasma penetration and high-energy neutron bombardment in fusion devices.

  19. Ion Implanted Passivated Contacts for Interdigitated Back Contacted Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Reedy, Robert; Bateman, Nicholas; Stradins, Pauls

    2015-06-14

    We describe work towards an interdigitated back contacted (IBC) solar cell utilizing ion implanted, passivated contacts. Formation of electron and hole passivated contacts to n-type CZ wafers using tunneling SiO2 and ion implanted amorphous silicon (a-Si) are described. P and B were ion implanted into intrinsic amorphous Si films at several doses and energies. A series of post-implant anneals showed that the passivation quality improved with increasing annealing temperatures up to 900 degrees C. The recombination parameter, Jo, as measured by a Sinton lifetime tester, was Jo ~ 14 fA/cm2 for Si:P, and Jo ~ 56 fA/cm2 for Si:B contacts. The contact resistivity for the passivated contacts, as measured by TLM patterns, was 14 milliohm-cm2 for the n-type contact and 0.6 milliohm-cm2 for the p-type contact. These Jo and pcontact values are encouraging for forming IBC cells using ion implantation to spatially define dopants.

  20. Ion implantation of CdTe single crystals

    Directory of Open Access Journals (Sweden)

    Wiecek Tomasz

    2017-01-01

    Full Text Available Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (1017 1/cm2. The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

  1. Ion implantation of CdTe single crystals

    Science.gov (United States)

    Wiecek, Tomasz; Popovich, Volodymir; Bester, Mariusz; Kuzma, Marian

    2016-12-01

    Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (1017 1/cm2). The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

  2. Structural modification of tantalum crystal induced by nitrogen ion implantation

    Indian Academy of Sciences (India)

    A H RAMEZANI; M R HANTEHZADEH; M GHORANNEVISS; E DARABI

    2016-06-01

    This paper investigates the effect of nitrogen ion implantation on tantalum surface structure. In this experiment, nitrogen ions which had an energy of 30 keV and doses of $1 \\times 10^{17}$ to $10 \\times 10^{17}$ ions cm$^{−2}$ were used. X-ray diffraction analysis (XRD) was applied for both the metallic Ta substrate and the study of new structures that have been created through the nitrogen ion implantation. Atomic force microscopy (AFM) was also used tocheck the roughness variations prior to and also after the implantation phase. The experimental results show the formation of hexagonal tantalum nitride (TaN$_{0.43}$) in addition to the fact that by increasing the ion dose, the nitrogen atoms occupy more interstitial spaces in the target crystal. The nitride phase also seen for $3\\times 10^{17}$ and $5\\times 10^{17}$ ions cm$^{−2}$, while it disappeared for higher dose of $7\\times 10^{17}$ and $1\\times 10^{18}$ ions cm$^{−2}$. The FWHM of the dominant peak of tantalum nitride suggest the growth of the crystallite’s size, which is in agreement with the AFM results ofthe grains.

  3. Raman scattering in silicon disordered by gold ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Lavrentiev, Vasily; Vacik, Jiri; Vosecek, Vaclav [NS Lab, Nuclear Physics Institute AS CR, Rez-130, Husinec 250 68 (Czech Republic); Vorlicek, Vladimir [Institute of Physics AS CR, Na Slovance 2, Prague 182 21 (Czech Republic)

    2010-08-15

    Si (111) covered by a 250-nm thick SiO{sub 2} surface layer has been disordered through implantation of 3.035 MeV gold ions within broad range of fluences from 1 x 10{sup 13} ions/cm{sup 2} to 1 x 10{sup 16} ions/cm{sup 2}. Raman spectroscopy (514.5 nm laser) was applied for characterization of the silicon disordering. Variation of the Raman spectra of silicon after low-fluence implantation (fluences lower than 5 x 10{sup 14} ions/cm{sup 2}) in the vicinity of the transverse optical phonon (1TO) peak reflects the coexistence of bulk Si crystals (c-Si) and Si nanocrystals (nc-Si) in the implanted layer. Implantation with higher fluences yields only the stable 470 cm{sup -1} 1TO peak, corresponding to formation of amorphous phase (a-Si), in this region of the spectra. Detailed analysis of the silicon disorder was performed through calculation of the transverse acoustical phonon (1TA) peak area. The fluence dependence of the peak area reveals qualitative correlation with the depth profile of structural defects in the modified Si layer evaluated from RBS (Rutherford backscattering) experiment and from SRIM (stopping and range of ions in matter) code simulation. This correlation suggests a decrease of the structural disorder in the modified layer region enriched by vacancies. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  4. Dislocation mechanism of deuterium retention in tungsten under plasma implantation.

    Science.gov (United States)

    Dubinko, V I; Grigorev, P; Bakaev, A; Terentyev, D; van Oost, G; Gao, F; Van Neck, D; Zhurkin, E E

    2014-10-01

    We have developed a new theoretical model for deuterium (D) retention in tungsten-based alloys on the basis of its being trapped at dislocations and transported to the surface via the dislocation network with parameters determined by ab initio calculations. The model is used to explain experimentally observed trends of D retention under sub-threshold implantation, which does not produce stable lattice defects to act as traps for D in conventional models. Saturation of D retention with implantation dose and effects due to alloying of tungsten with, e.g. tantalum, are evaluated, and comparison of the model predictions with experimental observations under high-flux plasma implantation conditions is presented.

  5. Characterization of duplex hard coatings with additional ion implantation

    Directory of Open Access Journals (Sweden)

    B. Škorić

    2012-01-01

    Full Text Available In this paper, we present the results of a study of TiN thin fi lms which are deposited by a Physical Vapour Deposition (PVD and Ion Beam Assisted Deposition (IBAD. In the present investigation the subsequent ion implantation was provided with N+2 ions. The ion implantation was applied to enhance the mechanical properties of surface. The thin film deposition process exerts a number of eff ects such as crystallographic orientation, morphology, topography, densifi cation of the fi lms. The evolution of the microstructure from porous and columnar grains to densel packed grains is accompanied by changes in mechanical and physical properties. A variety of analytic techniques were used for characterization, such as scratch test, calo test, Scanning electron microscopy (SEM, Atomic Force Microscope (AFM, X-ray diff raction (XRD and Energy Dispersive X-ray analysis (EDAX.

  6. Analysis of metal ion release from biomedical implants

    Directory of Open Access Journals (Sweden)

    Ivana Dimić

    2013-06-01

    Full Text Available Metallic biomaterials are commonly used for fixation or replacement of damaged bones in the human body due to their good combination of mechanical properties. The disadvantage of metals as implant materials is their susceptibility to corrosion and metal ion release, which can cause serious health problems. In certain concentrations metals and metal ions are toxic and their presence can cause diverse inflammatory reactions, genetic mutations or even cancer. In this paper, different approaches to metal ion release examination, from biometallic materials sample preparation to research results interpretation, will be presented. An overview of the analytical techniques, used for determination of the type and concentration of released ions from implants in simulated biofluids, is also given in the paper.

  7. The Use of Ion Implantation for Materials Processing.

    Science.gov (United States)

    1980-10-06

    IPreEEhhh I l...fflllffllff NRL Memorandum Report 4341 TheUseofIon Implantation for Materials Processing Semana Progres Report for the Period 1 Oct. 1979...beam current. The temperature was judged by observing of results to be expected from such a Gaussian distribution the color of the samples through a...light multiply tion." ion channeling,’ ’ Coates-Kikuchi lines,’ physical ap- reflected between the front surface and the interface between pearance ( color

  8. EPR of ion-implanted, laser-annealed silicon

    Energy Technology Data Exchange (ETDEWEB)

    Brower, K.L.; Peercy, P.S.

    1979-01-01

    Electron paramagnetic resonance and ion backscattering measurements were made on ion-implanted, pulsed laser-annealed silicon. For phosphorus-implanted silicon (3 x 10/sup 13/ 200 keV P/sup +//cm/sup 2/) the electrical activity of the implanted donors is restored after laser annealing with greater than or equal to 1.8 J/cm/sup 2/. Silicon made amorphous with 2 x 10/sup 15/ 200 keV Si/sup +//cm/sup 2/ and implanted with 3 x 10/sup 13/ 200 keV P/sup +//cm/sup 2/ can be restored to crystallinity after laser annealing, but electrical activity of the P was not restored due to residual defects for laser energies less than or equal to 3 J/cm/sup 2/. Electrical activity can be restored, at least in part, for amorphous silicon implanted at lower energies (approx. = 50 keV). We also observed that N/sub 2/ reacts with amorphous silicon surfaces to form silicon-nitride. Under laser annealing the N is redistributed and exists as an N interstitial within the implanted layer.

  9. Observations of strong ion-ion correlations in dense plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Ma, T., E-mail: ma8@llnl.gov; Pak, A.; Landen, O. L.; Le Pape, S.; Turnbull, D.; Döppner, T. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Fletcher, L.; Galtier, E.; Hastings, J.; Lee, H. J.; Nagler, B.; Glenzer, S. H. [SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Chapman, D. A. [Plasma Physics Group, AWE plc, Reading RG7 4PR (United Kingdom); Centre for Fusion, Space and Astrophysics, Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Falcone, R. W. [Physics Department, University of California, Berkeley, California 94720 (United States); Fortmann, C. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Department of Physics and Astronomy, University of California, Los Angeles, California 90095 (United States); Gericke, D. O. [Centre for Fusion, Space and Astrophysics, Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Gregori, G.; White, T. G. [University of Oxford, Clarendon Laboratory, Oxford OX1 3PU (United Kingdom); Neumayer, P. [Extreme Matter Institute, GSI Helmholtzzentrum für Schwerionenforschung, Planckstr. 1, 64291 Darmstadt (Germany); Vorberger, J. [Max Planck Institut für Physik komplexer Systeme, Nötthnizer Straße 38, 01187 Dresden (Germany); and others

    2014-05-15

    Using simultaneous spectrally, angularly, and temporally resolved x-ray scattering, we measure the pronounced ion-ion correlation peak in a strongly coupled plasma. Laser-driven shock-compressed aluminum at ∼3× solid density is probed with high-energy photons at 17.9 keV created by molybdenum He-α emission in a laser-driven plasma source. The measured elastic scattering feature shows a well-pronounced correlation peak at a wave vector of k=4Å{sup −1}. The magnitude of this correlation peak cannot be described by standard plasma theories employing a linear screened Coulomb potential. Advanced models, including a strong short-range repulsion due to the inner structure of the aluminum ions are however in good agreement with the scattering data. These studies have demonstrated a new highly accurate diagnostic technique to directly measure the state of compression and the ion-ion correlations. We have since applied this new method in single-shot wave-number resolved S(k) measurements to characterize the physical properties of dense plasmas.

  10. Erbium ion implantation into different crystallographic cuts of lithium niobate

    Science.gov (United States)

    Nekvindova, P.; Svecova, B.; Cajzl, J.; Mackova, A.; Malinsky, P.; Oswald, J.; Kolistsch, A.; Spirkova, J.

    2012-02-01

    Single crystals like lithium niobate are frequently doped with optically active rare-earth or transition-metal ions for a variety of applications in optical devices such as solid-state lasers, amplifiers or sensors. To exploit the potential of the Er:LiNbO 3, one must ensure high intensity of the 1.5 μm luminescence as an inevitable prerequisite. One of the important factors influencing the luminescence properties of a lasing ion is the crystal field of the surrounding, which is inevitably determined by the crystal structure of the pertinent material. From that point it is clear that it cannot be easy to affect the resulting luminescence properties - intensity or position of the luminescence band - without changing the structure of the substrate. However, there is a possibility to utilise a potential of the ion implantation of the lasing ions, optionally accompanied with a sensitising one, that can, besides the doping, also modify the structure of the treated area od the crystal. This effect can be eventually enhanced by a post-implantation annealing that may help to recover the damaged structure and hence to improve the desired luminescence. In this paper we are going to report on our experiments with ion-implantation technique followed with subsequent annealing could be a useful way to influence the crystal field of LN. Optically active Er:LiNbO 3 layers were fabricated by medium energy implantation under various experimental conditions. The Er + ions were implanted at energies of 330 and 500 keV with fluences ranging from 1.0 × 10 15 to 1.0 × 10 16 ion cm -2 into LiNbO 3 single-crystal cuts of both common and special orientations. The as-implanted samples were annealed in air and oxygen at two different temperatures (350 and 600 °C) for 5 h. The depth concentration profiles of the implanted erbium were measured by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He + ions. The photoluminescence spectra of the samples were measured to determine the

  11. Vickers hardness measurement of ion implanted MgO

    Energy Technology Data Exchange (ETDEWEB)

    Aoki, Y. (TRCRE, JAERI, 1233 Watanuki-machi, Takasaki, Gunma 370-12 (Japan)); Rueck, D.M. (Materialforschung, UNILAC, GSI, D-6100, Darmstadt (Germany)); Vogt, D. (Materialforschung, UNILAC, GSI, D-6100, Darmstadt (Germany)); Leible, K. (Materialforschung, UNILAC, GSI, D-6100, Darmstadt (Germany)); Khubeis, I. (University of Jordan, P.O. Box 13097, Amman (Jordan)); Meyer, O. (INFP, KfK, D-7500, Karlsruhe 1 (Germany))

    1994-06-01

    The Vickers hardness was measured for single crystals of MgO(100) implanted with 130 keV or 1.8 MeV Ar[sup +] ions and with 400 keV Xe[sup 2+] ions by means of the indentation technique with an applied load of 0.4-30 mN. Implantation with 130 keV Ar[sup +] and 400 keV Xe[sup 2+] gave similar results in hardening of MgO surface layers. In addition, the dose dependence of the measured hardness curve showed that a softening mechanism takes place at high doses. High energy implantation (1.8 MeV Ar[sup +]) made a hardened surface layer on MgO. This hardened layer also became softer at high doses. ((orig.))

  12. Surface induced reactivity for titanium by ion implantation.

    Science.gov (United States)

    Pham, M T; Reuther, H; Matz, W; Mueller, R; Steiner, G; Oswald, S; Zyganov, I

    2000-06-01

    Calcium and phosphorus storage in a thin layer of titanium surface was achieved by ion implantation. We study the reactivity of this surface in response to a hydrothermal treatment. The incipient implanted species are observed to convert to Ca(2+) and PO(4)(3-), the precursors for generating calcium phosphate polymorphs. Hydroxyapatite is formed from these precursors by an interface-liquid mediated mineralization preceded by the hydrolysis of oxygen compounds of Ca and P from the solid phase. The morphology and organization of apatite mineral is controlled by the fluid dynamics reflecting the surface remodeling to adapt to the available local environment. Exposed to calcium and phosphate ion containing solution, the hydrothermally treated surface templates hydroxyapatite deposition. Ca and P implanted Ti surface was shown to be chemically and morphologically actively involved in the interfacial reactions.

  13. Study of ion implantation profiles by the PIXE technique

    Science.gov (United States)

    Midy, P.; Lagarde, G.; Brissaud, I.; Frontier, J. P.; Chaumont, J.

    1998-03-01

    The RBS technique is currently used with alpha particles as a non-destructive way of studying concentration depth profiles. This technique is especially convenient in characterizing heavy atom distributions inside a matrix of lighter elements, and its use is less convenient in the case of light elements in a matrix of heavier ones. On the other hand the probing depth is limited by the small range of alpha particles in the matrix. We present here a new procedure for determining ion implantation profiles by means of the PIXE technique and by varying the impinging proton energy. As an example, silicon ions of two energies have been implanted into pure titanium samples in order to obtain implantation profiles with a double peak. The results presented here are in good agreement with the calculations using the TRIM code.

  14. Electronic properties of ion-implanted yttria-stabilized zirconia

    NARCIS (Netherlands)

    Vohrer, U.; Wiemhöfer, H.-D.; Göpel, W.; Hassel, van B.A.; Burggraaf, A.J.

    1993-01-01

    Ion implantation of iron and titanium has been applied to modify the surface properties of polycrystalline yttria-stabilized zirconia ((ZrO2)0.87(YO1.5)0.13 (YSZ)) discs in an attempt to prepare surfaces with a mixed conductivity and by this an enhanced surface oxygen exchange kinetics. Surface-sen

  15. Microactuators based on ion implanted dielectric electroactive polymer (EAP) membranes

    NARCIS (Netherlands)

    Dubois, Philippe; Rosset, Samuel; Koster, Sander; Stauffer, Johann; Mikhailov, Serguei; Dadras, Massoud; de Rooij, Nico-F.; Shea, Herbert

    2006-01-01

    We report on the first successfully microfabricated and tested ion implanted dielectric electroactive polymer (DEAP) actuators. Dielectric EAP (DEAP) actuators combine exceptionally high energy-density with large amplitude displacements [S. Ashley, Artificial muscles, Sci. Am. 289 (2003) 52-59: R. P

  16. Buried injector logic, a vertical IIL using deep ion implantation

    NARCIS (Netherlands)

    Mouthaan, A.J.

    1987-01-01

    A vertically integrated alternative for integrated injection logic has been realized, named buried injector logic (BIL). 1 MeV ion implantations are used to create buried layers. The vertical pnp and npn transistors have thin base regions and exhibit a limited charge accumulation if a gate is satura

  17. Raman microprobe measurements of stress in ion implanted materials

    Energy Technology Data Exchange (ETDEWEB)

    Nugent, K.W.; Prawer, S.; Weiser, P.S.; Dooley, S.P. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1993-12-31

    Raman microprobe measurements of ion implanted diamond and silicon have shown significant shifts in the Raman line due to stresses in the materials. The Raman line shifts to higher energy if the stress is compressive and to lower energy for tensile stress{sup 1}. The silicon sample was implanted in a 60 {mu}m square with 2.56 x 10{sup 17} ions per square centimeter of 2 MeV Helium. This led to the formation of raised squares with the top 370mm above the original surface. In Raman studies of silicon using visible light, the depth of penetration of the laser beam into the sample is much less than one micron. It was found that the Raman line is due to the silicon overlying the damage region. The diamond sample was implanted with 2 x 10{sup 15} ions per square centimeter of 2.8 MeV carbon. It was concluded that the Raman spectrum could provide information concerning both the magnitude and the direction of stress in an ion implanted sample. It was possible in some cases to determine whether the stress direction is parallel or perpendicular to the sample surface. 1 refs., 2 figs.

  18. Evidence of light guiding in ion-implanted diamond

    CERN Document Server

    Lagomarsino, S; Bosia, F; Vannoni, M; Calusi, S; Giuntini, L; Massi, M

    2016-01-01

    We demonstrate the feasibility of fabricating light-waveguiding microstructures in bulk single-crystal diamond by means of direct ion implantation with a scanning microbeam, resulting in the modulation of the refractive index of the ion-beam damaged crystal. Direct evidence of waveguiding through such buried microchannels is obtained with a phase-shift micro-interferometric method allowing the study of the multi-modal structure of the propagating electromagnetic field. The possibility of defining optical and photonic structures by direct ion writing opens a range of new possibilities in the design of quantum-optical devices in bulk single crystal diamond.

  19. Cooperative emission in ion implanted Yb:YAG waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Vazquez, G V; Desirena, H; De la Rosa, E [Centro de Investigaciones en Optica, Loma del Bosque 115, Lomas del Campestre, 37150 Leon, Guanajuato (Mexico); Flores-Romero, E; Rickards, J; Trejo-Luna, R [Instituto de Fisica, UNAM, Apartado Postal 20364, 01000 Mexico, D. F. (Mexico); Marquez, H, E-mail: gvvazquez@cio.mx [Departamento de Optica, CICESE, Km 107 Carr. Tijuana-Ensenada, 22860 Ensenada, B. C. (Mexico)

    2011-01-01

    In this work, we report the analysis of spectroscopic properties of waveguides fabricated by ion implantation in YAG doped with Yb{sup 3+} ions. Three emission bands were detected in the blue, green and red regions under 970-nm excitation. The strong blue-green emission can be explained by a cooperative process between ytterbium ion pairs, leading to emission centered at 514 nm. The additional blue bands as well as green and red emission bands are attributed to the presence of Tm{sup 3+} and Er{sup 3+} traces. The results include absorption and emission curves as well as decay time rates.

  20. Zinc-ion implanted and deposited titanium surfaces reduce adhesion of Streptococccus mutans

    Energy Technology Data Exchange (ETDEWEB)

    Xu Juan, E-mail: doctorxue@126.com [Implant Center, School of Stomatology Jilin University, Changchun, Jilin (China) and Stomatological Hospital, Urumqi, Xinjiang (China); Ding Gang [Department of Stomatology, Yidu Central Hospital, Weifang, Shandong (China); Capital Medical University School of Stomatology, Beijing (China); Li Jinlu; Yang Shenhui; Fang Bisong [Capital Medical University School of Stomatology, Beijing (China); Sun Hongchen, E-mail: hcsun@jlu.edu.cn [Implant Center, School of Stomatology Jilin University, Changchun, Jilin (China); Zhou Yanmin, E-mail: zhouym62@126.com [Implant Center, School of Stomatology Jilin University, Changchun, Jilin (China)

    2010-10-01

    While titanium (Ti) is a commonly used dental implant material with advantageous biocompatible and mechanical properties, native Ti surfaces do not have the ability to prevent bacterial colonization. The objective of this study was to evaluate the chemical composition and bacterial adhesive properties of zinc (Zn) ion implanted and deposited Ti surfaces (Zn-PIIID-Ti) as potential dental implant materials. Surfaces of pure Ti (cp-Ti) were modified with increasing concentrations of Zn using plasma immersion ion implantation and deposition (PIIID), and elemental surface compositions were characterized by X-ray photoelectron spectrometry (XPS). To evaluate bacterial responses, Streptococcus mutans were seeded onto the modifiedTi surfaces for 48 h and subsequently observed by scanning electron microscopy. Relative numbers of bacteria on each surface were assessed by collecting the adhered bacteria, reculturing and counting colony forming units after 48 h on bacterial grade plates. Ti, oxygen and carbon elements were detected on all surfaces by XPS. Increased Zn signals were detected on Zn-PIIID-Ti surfaces, correlating with an increase of Zn-deposition time. Substantial numbers of S. mutans adhered to cp-Ti samples, whereas bacterial adhesion on Zn-PIIID-Ti surfaces signficantly decreased as the Zn concentration increased (p < 0.01). In conclusion, PIIID can successfully introduce Zn onto a Ti surface, forming a modified surface layer bearing Zn ions that consequently deter adhesion of S. mutans, a common bacterium in the oral environment.

  1. Application of Coaxial Ion Gun for Film Generation and Ion Implantation

    Science.gov (United States)

    Takatsu, Mikio; Asai, Tomohiko; Kurumi, Satoshi; Suzuki, Kaoru; Hirose, Hideharu; Masutani, Shigeyuki

    A magnetized coaxial plasma gun (MCPG) is here utilized for deposition on high-melting-point metals. MCPGs have hitherto been studied mostly in the context of nuclear fusion research, for particle and magnetic helicity injection and spheromak formation. During spheromak formation, the electrode materials are ionized and mixed into the plasmoid. In this study, this ablation process by gun-current sputtering is enhanced for metallic thin-film generation. In the proposed system geometry, only ionized materials are electromagnetically accelerated by the self-Lorentz force, with ionized operating gas as a magnetized thermal plasmoid, contributing to the thin-film deposition. This reduces the impurity and non-uniformity of the deposited thin-film. Furthermore, as the ions are accelerated in a parallel direction to the injection axis, vertical implantation of the ions into the substrate surface is achieved. To test a potential application of the developed system, experiments were conducted involving the formation of a buffer layer on hard ceramics, for use in dental materials.

  2. Mass spectrometry improvement on an high current ion implanter

    Energy Technology Data Exchange (ETDEWEB)

    Lopes, J.G., E-mail: jgabriel@deea.isel.ipl.pt [Instituto Superior de Engenharia de Lisboa and Centro de Fisica Nuclear of the University of Lisbon, Rua Conselheiro Emidio Navarro, 1, 1959-007 Lisbon (Portugal); Alegria, F.C., E-mail: falegria@lx.it.pt [Instituto Superior Tecnico/Technical University of Lisbon and Instituto de Telecomunicacoes, Av. Rovisco Pais, 1, 1049-001 Lisbon (Portugal); Redondo, L.M., E-mail: lmredondo@deea.isel.ipl.pt [Instituto Superior de Engenharia de Lisboa and Centro de Fisica Nuclear of the University of Lisbon, Rua Conselheiro Emidio Navarro, 1, 1959-007 Lisbon (Portugal); Rocha, J., E-mail: jrocha@itn.pt [Instituto Tecnologico Nuclear, Estrada Nacional 10, 2686-953 Sacavem (Portugal); Alves, E., E-mail: ealves@itn.pt [Instituto Tecnologico Nuclear, Estrada Nacional 10, 2686-953 Sacavem (Portugal)

    2011-12-15

    The development of accurate mass spectrometry, enabling the identification of all the ions extracted from the ion source in a high current implanter is described. The spectrometry system uses two signals (x-y graphic), one proportional to the magnetic field (x-axes), taken from the high-voltage potential with an optic fiber system, and the other proportional to the beam current intensity (y-axes), taken from a beam-stop. The ion beam mass register in a mass spectrum of all the elements magnetically analyzed with the same radius and defined by a pair of analyzing slits as a function of their beam intensity is presented. The developed system uses a PC to control the displaying of the extracted beam mass spectrum, and also recording of all data acquired for posterior analysis. The operator uses a LabVIEW code that enables the interfacing between an I/O board and the ion implanter. The experimental results from an ion implantation experiment are shown.

  3. Detection and reduction of tungsten contamination in ion implantation processes

    Energy Technology Data Exchange (ETDEWEB)

    Polignano, M.L.; Galbiati, A.; Grasso, S.; Mica, I.; Barbarossa, F.; Magni, D. [STMicroelectronics, Agrate Brianza (Italy)

    2016-12-15

    In this paper, we review the results of some studies addressing the problem of tungsten contamination in implantation processes. For some tests, the implanter was contaminated by implantation of wafers with an exposed tungsten layer, resulting in critical contamination conditions. First, DLTS (deep level transient spectroscopy) measurements were calibrated to measure tungsten contamination in ion-implanted samples. DLTS measurements of tungsten-implanted samples showed that the tungsten concentration increases linearly with the dose up to a rather low dose (5 x 10{sup 10} cm{sup -2}). Tungsten deactivation was observed when the dose was further increased. Under these conditions, ToF-SIMS revealed tungsten at the wafer surface, showing that deactivation was due to surface segregation. DLTS calibration could therefore be obtained in the linear dose regime only. This calibration was used to evaluate the tungsten contamination in arsenic implantations. Ordinary operating conditions and critical contamination conditions of the equipment were compared. A moderate tungsten contamination was observed in samples implanted under ordinary operating conditions. This contamination was easily suppressed by a thin screen oxide. On the contrary, implantations in critical conditions of the equipment resulted in a relevant tungsten contamination, which could be reduced but not suppressed even by a relatively thick screen oxide (up to 150 Aa). A decontamination process consisting of high dose implantations of dummy wafers was tested for its efficiency to remove tungsten and titanium contamination. This process was found to be much more effective for titanium than for tungsten. Finally, DLTS proved to be much more sensitive that TXRF (total reflection X-ray fluorescence) in detecting tungsten contamination. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Ignition and dynamics of high-voltage glow discharge plasma implantation

    Science.gov (United States)

    Fu, Ricky K. Y.; Chu, Paul K.; Tian, X. B.; Yang, S. Q.

    2006-01-01

    The self-ignition and dynamics of glow discharge plasma in the pulsed high-voltage plasma immersion ion implantation mode have been investigated. After ignition during the pulse-on period, the glow discharge continues to be sustained for a long period of time after the high-voltage pulse has been turned off as monitored by a Langmuir probe. The glow discharge and ignition lie on the left side of the Paschen curve when pd (gas pressure times electrode separation) is adjusted by using different anode to cathode distances utilizing a conducting grounded grid. The increased or constant implantation current Ia reveals that the ion sheath is stable and conforms to the cathode structure as the plasma density increases by one to two orders of magnitude towards the anode. In addition, the duration of the post-pulse-off plasma can be as long as several times of the pulse duration. The ignition time and duration of the plasma depend on the working pressure, applied voltage and pulse duration.

  5. Pulse height defect of energetic heavy ions in ion-implanted Si detectors

    Science.gov (United States)

    Pasquali, G.; Casini, G.; Bini, M.; Calamai, S.; Olmi, A.; Poggi, G.; Stefanini, A. A.; Saint-Laurent, F.; Steckmeyer, J. C.

    1998-02-01

    The pulse height defect in ion-implanted silicon detectors for elastically scattered 93Nb, 100Mo, 116Sn, 120Sn and 129Xe ions, at energies ranging from about 4 to 25 A MeV has been measured. The results are compared with two widely used parametrizations taken from the literature.

  6. Pulse height defect of energetic heavy ions in ion-implanted Si detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pasquali, G.; Casini, G.; Bini, M.; Calamai, S.; Olmi, A.; Poggi, G.; Stefanini, A.A. [Istituto Nazionale di Fisica Nucleare, Florence (Italy)]|[Univ. of Florence (Italy); Saint-Laurent, F. [DRFC/STEP, CEN Cadarache, 13108 Saint Paul Lez Durance Cedex (France); Steckmeyer, J.C. [Laboratoire de Physique Corpuscolaire, ISMRA, 14050 Caen Cedex (France)

    1998-03-01

    The pulse height defect in ion-implanted silicon detectors for elastically scattered {sup 93}Nb, {sup 100}Mo, {sup 116}Sn, {sup 120}Sn and {sup 129}Xe ions, at energies ranging from about 4 to 25 A MeV has been measured. The results are compared with two widely used parametrizations taken from the literature. (orig.). 14 refs.

  7. Ion implantation damage and crystalline-amorphous transition in Ge

    Energy Technology Data Exchange (ETDEWEB)

    Impellizzeri, G.; Mirabella, S.; Grimaldi, M.G. [Universita di Catania, MATIS IMM-CNR (Italy); Dipartimento di Fisica e Astronomia, Catania (Italy)

    2011-05-15

    Experimental studies on the damage produced in (100) Ge substrates by implantation of Ge{sup +} ions at different energies (from 25 to 600 keV), fluences (from 2 x 10{sup 13} to 4 x 10{sup 14} cm{sup -2}) and temperature (room temperature, RT, or liquid-nitrogen temperature, LN{sub 2}T) have been performed by using the Rutherford backscattering spectrometry technique. We demonstrated that the higher damage rate of Ge with respect to Si is due to both the high stopping power of germanium atoms and the low mobility of point defects within the collision cascades. The amorphization of Ge has been modeled by employing the critical damage energy density model in a large range of implantation energies and fluences both at RT and LN{sub 2}T. The experimental results for implantation at LN{sub 2}T were fitted using a critical damage energy density of {proportional_to}1 eV/atom. A fictitious value of {proportional_to}5 eV/atom was obtained for the samples implanted at RT, essentially because at RT the damage annihilation plays a non-negligible role against the crystalline-amorphous transition phase. The critical damage energy density model was found to stand also for other ions implanted in crystalline Ge (Ar{sup +} and Ga{sup +}). (orig.)

  8. Study of the amorphization of surface silicon layers implanted by low-energy helium ions

    Science.gov (United States)

    Lomov, A. A.; Myakon'kikh, A. V.; Oreshko, A. P.; Shemukhin, A. A.

    2016-03-01

    The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2-5)-keV helium ions to a dose of D = 6 × 1015-5 × 1017 cm-2 have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ( z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 1016 cm-2 leads to the formation of a 20- to 30-nm-thick amorphized surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer.

  9. Acid etching and plasma sterilization fail to improve osseointegration of grit blasted titanium implants

    DEFF Research Database (Denmark)

    Mortensen, Mikkel Saksø; Jakobsen, Stig Storgaard; Saksø, Henrik

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation...... compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri......-implant tissue density) and mechanical push-out testing after four weeks observation time.Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner....

  10. Oxidation of polyethylene implanted with low energy magnesium ions

    Energy Technology Data Exchange (ETDEWEB)

    Deslandes, Alec, E-mail: acd@ansto.gov.au [Australian Nuclear Science and Technology Organisation, Sydney (Australia); Ionescu, Mihail, E-mail: mio@ansto.gov.au [Australian Nuclear Science and Technology Organisation, Sydney (Australia); Karatchevtseva, Inna, E-mail: ikm@ansto.gov.au [Australian Nuclear Science and Technology Organisation, Sydney (Australia); Siegele, Rainer, E-mail: rns@ansto.gov.au [Australian Nuclear Science and Technology Organisation, Sydney (Australia); Cohen, David D., E-mail: dcz@ansto.gov.au [Australian Nuclear Science and Technology Organisation, Sydney (Australia)

    2013-07-15

    The oxidation of polyethylene implanted with low energy, i.e. 25–50 keV, Mg ions to fluences from 5 × 10{sup 12}–5 × 10{sup 16} ions/cm{sup 2} was studied. Rutherford back-scattering spectroscopy showed all implanted samples gained oxygen but the distribution did not match that of the implanted Mg. An increase in carbon content was also observed for the near-surface region. Depth profiles of hydrogen were obtained via elastic recoil detection analysis, showing that hydrogen was lost throughout and beyond the range of the Mg ions, producing unsaturated and chemically active sites available for oxidation. Fourier-transform infrared spectroscopy revealed the formation of carbon–oxygen bonding such as carbonyl groups, but showed no evidence of oxidised magnesium. Raman spectroscopy showed disordered and graphitic carbon bonding configurations were created by the irradiation, but no evidence of oxidised magnesium. The implantation of films to high fluence produced a carbonized surface-layer that made the irradiated polymer more resistant to oxidation.

  11. 120-kV ion-implantation system

    Energy Technology Data Exchange (ETDEWEB)

    Bhatia, M.S.; Bhattacharya, P.K.; Gaonkar, S.; Kansara, M.J.; Sarma, N.; Wagh, A.G.

    1980-01-01

    A compact and versatile heavy ion accelerator has been constructed for the uniform implantation of wafers with beams of microamperes and acceleration voltages of up to 120 keV. The mass analysis of the ion beam is carried out within the high voltage terminal at an energy of 10 keV after beam formation and focussing by an Extractor-cum-Einzel lens. The electromagnet utilized for this was of 14/sup 0/ bending angle. Acceleration is provided by a modified insulated core transformer of five sections operating on three phase power input. Provision is made for the implantation of either single targets and for the batch implantation of up to 36 wafers at a time. The ion source is a Nielsen type in which evaporation and ionization are achieved by the impact of thermionic electrons from a hot filament. It is capable of delivering currents in the microampere range for most of the elements and accepts liquid, solid and gaseous charges. While the facility enables implants of a wide range of doses, species and energies, it is mainly used for boron and phosphorous doping in semiconductors. Electrostatic scanning in two dimensions ensures maximum uniformity. All controls are operated at ground potential and are easily accessible.

  12. The compaction of fused silica resulting from ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, C.M.; Ridgway, M.C. [Australian National Univ., Canberra, ACT (Australia); Leech, P.L. [Telstra Research Laboratories, Clayton, Victoria (Australia)

    1996-12-31

    Ion implantation of fused silica results in compaction and consequently an increase in refractive index. This method of modifying the near-surface region has been shown as a potential means for fabricating single mode channel waveguides. This study has measured the compaction of the implanted regions for Si implantations as a function of dose (2x10{sup 12} - 6x10{sup l6} ions/cm{sup 2}), energy (1-9 MeV) and post-implantation annealing temperature (200-900 degree C). For a given energy, a dose-dependence of the step height (depth of compacted region) is observed for doses less than {approx}10{sup 15} ions/cm{sup 2}. At higher doses the step height saturates. For a given dose, a linear trend is evident for the step height as a function of energy suggesting that the major mechanism for this compaction is electronic stopping. As the annealing temperature increases, the step height gradually decreases from {approx}0.1-0.2 {mu} to -10-20% of the original value. From the annealing data, it is possible to extract an activation energy of 0.08 eV associated with the thermal removal of the compacted region. 4 refs., 4 figs.

  13. N and Cr ion implantation of natural ruby surfaces and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Rao, K. Sudheendra; Sahoo, Rakesh K.; Dash, Tapan [CSIR-Institute of Minerals and Materials Technology, Bhubaneswar 751013 (India); Magudapathy, P.; Panigrahi, B.K. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Nayak, B.B.; Mishra, B.K. [CSIR-Institute of Minerals and Materials Technology, Bhubaneswar 751013 (India)

    2016-04-15

    Highlights: • Cr and N ion implantation on natural rubies of low aesthetic quality. • Cr-ion implantation improves colour tone from red to deep red (pigeon eye red). • N-ion implantation at fluence of 3 × 10{sup 17} causes blue coloration on surface. • Certain extent of amorphization is observed in the case of N-ion implantation. - Abstract: Energetic ions of N and Cr were used to implant the surfaces of natural rubies (low aesthetic quality). Surface colours of the specimens were found to change after ion implantation. The samples without and with ion implantation were characterized by diffuse reflectance spectra in ultra violet and visible region (DRS-UV–Vis), field emission scanning electron microscopy (FESEM), selected area electron diffraction (SAED) and nano-indentation. While the Cr-ion implantation produced deep red surface colour (pigeon eye red) in polished raw sample (without heat treatment), the N-ion implantation produced a mixed tone of dark blue, greenish blue and violet surface colour in the heat treated sample. In the case of heat treated sample at 3 × 10{sup 17} N-ions/cm{sup 2} fluence, formation of colour centres (F{sup +}, F{sub 2}, F{sub 2}{sup +} and F{sub 2}{sup 2+}) by ion implantation process is attributed to explain the development of the modified surface colours. Certain degree of surface amorphization was observed to be associated with the above N-ion implantation.

  14. Factors affecting the ion beam implantation in silicon

    CERN Document Server

    El-Shanshoury, A I

    2003-01-01

    The factors affecting the ion beam implantation in silicon have been studied using boron, phosphorus, oxygen, and argon ions having energy range 0.5 ke V-200 ke V. It was found that the range of the ions in silicon increases with the increase of their energy and decreases with the increase of their masses. The ionization process is found to be the main process for causing damage in the silicon matrix whether it is produced by the accelerated ions or by the recoiled silicon atoms. The magnitude of ionization in silicon is found to be inversely proportional to the mass of ions. Ionization produced by ions or recoils shows different contributions to the damage depending on the mass of ions where the ions energy loss to ionization decreases from 70% to 23% as the mass is increased from 11 for boron (B) to 40 for argon (Ar). Its magnitude, as produced by ions, is found to decrease with the increase of their masses. Its value is observed to increase in a complementary way with the mass increase. Ions energy loss to...

  15. Characterization of Ion-Implanted Semiconductors

    Science.gov (United States)

    1980-11-01

    UM OFNovoE •-_• Air Force Wright Aeronautical Laboratories (A C 3.NUMBER OF, WAGES ’ Wright-Pattexson AFB. Ohio 4%433 241 14. 14ON’|T/QRNG-AGENCY..NAME...monotonical) v with ion dose at all anneal temperatures before the conversion to n-type occurs , :od a moi!bilitv minimuns is evident at a dose of 3 lýl1 CM

  16. Dependence of implantation sequence on surface blistering characteristics due to H and He ions co-implanted in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Liang, J.H. [Institute of Nuclear Engineering and Science, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Hsieh, H.Y.; Wu, C.W. [Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Lin, C.M. [Department of Applied Science, National Hsinchu University of Education, Hsinchu 300, Taiwan, ROC (China)

    2015-12-15

    This study investigated surface blistering characteristics due to H and He ions co-implanted in silicon at room temperature. The H and He ion energies were 40 and 50 keV, respectively, so that their depth profiles were similar. The total implantation fluence for the H and He ions was 5 × 10{sup 16} cm{sup −2} under various fluence fractions in the H ions. The implantation sequences under investigation were He + H and H + He. Dynamic optical microscopy (DOM) was employed in order to dynamically analyze surface blistering characteristics. This study used DOM data to construct so-called time–temperature–transformation (T–T–T) curves to easily predict blistering and crater transformation at specific annealing times and temperatures. The results revealed that the curves of blister initialization, crater initialization, and crater completion in the He + H implant occurred at a lower annealing temperature but with a longer annealing time compared to those in the H + He implant. Furthermore, the threshold annealing temperatures for blister and crater formation in the He + H implant were lower than they were in the H + He implant. The size distributions of the blisters and craters in the He + H implant extended wider than those in the H + He implant. In addition, the He + H implant exhibited larger blisters and craters compared to the ones in the H + He implant. Since the former has a higher percentage of exfoliation area than the latter, it is regarded as the more optimal implantation sequence.

  17. Some features of ion mixing during simultaneous ion implantation and deposition of metallic coatings

    CERN Document Server

    Pogrebnyak, A D; Mikhalev, A D; Shablya, V T; Yanovskij, V P

    2001-01-01

    The results on the Ta, Cu ions implantation into the aluminium substrate by simultaneous deposition of these ions in the form of coatings are presented. The complex structure of these coatings from the given elements in the substrate, as well as the increase in the microhardness, adhesion and corrosion resistance growth are determined. It is shown on the basis of the results of the secondary ions energy distribution, that intermetallic phases are formed in the substrate surface layer

  18. Fast ion beam-plasma interaction system.

    Science.gov (United States)

    Breun, R A; Ferron, J R

    1979-07-01

    A device has been constructed for the study of the interaction between a fast ion beam and a target plasma of separately controllable parameters. The beam of either hydrogen or helium ions has an energy of 1-4 keV and a total current of 0.5-2 A. The beam energy and beam current can be varied separately. The ion source plasma is created by a pulsed (0.2-10-ms pulse length) discharge in neutral gas at up to 3 x 10(-3) Torr. The neutrals are pulsed into the source chamber, allowing the neutral pressure in the target region to remain less than 5 x 10(-5) Torr at a 2-Hz repetition rate. The creation of the source plasma can be described by a simple set of equations which predict optimum source design parameters. The target plasma is also produced by a pulsed discharge. Between the target and source chambers the beam is neutralized by electrons drawn from a set of hot filaments. Currently under study is an unstable wave in a field-free plasma excited when the beam velocity is nearly equal to the target electron thermal velocity (v(beam) approximately 3.5 x 10(7) cm/s, Te = 0.5 eV).

  19. Plasma-Based Ion Beam Sources

    Energy Technology Data Exchange (ETDEWEB)

    Loeb, H. W.

    2005-07-01

    Ion beam sources cover a broad spectrum of scientific and technical applications delivering ion currents between less than 1 mA and about 100 A at acceleration voltages between 100 V and 100 kV. The ions are mostly generated by electron collisions in a gas discharge and then extracted from the discharge plasma, focused and post-accelerated by single- or multi-aperture electrode systems. Some important applications require the neutralization of the exhausted beam either by charge exchange or by admixture of electrons. In the first part of the paper, the theory of ionization by electron impact, the energy and carrier balances in the plasma, and the extraction and focusing mechanisms will be outlined. The principles of the preferred gas discharges and of the ion beam sources based on them are discussed; i.e. of the Penning, bombardment, arc, duoplasmatron, radio frequency, and microwave types. In the second part of the paper, the special requirements of the different applications are described together with the related source hardware. One distinguishes: 1. Single-aperture ion sources producing protons, heavy ions, isotope ions, etc. for particle accelerators, ion microprobes, mass spectrometers, isotope separators, etc.; quality determinative quantities are brightness, emittance, energy width, etc. 2. Broad-beam multi-aperture injector sources for fusion machines with positive or negative deuterium ions; very high beam densities, small portions of molecular ions, flat beam profiles with small divergence angles, etc. are required. 3. Broad-beam multi-aperture ion thrusters for space propulsion operated with singly charged xenon ions; high efficiencies, reliable operation, and long lifetimes are most important. Spin-offs are applied in industry for material processing. Referring to these applications, the following sources will be described in some detail: 1. Cold cathode and filament driven sources, capillary arc and plasmatron types, microwave and ECR-sources. 2

  20. Iron-Ion Implantation into the Structure of Rock Crystal

    Directory of Open Access Journals (Sweden)

    A.V. Mukhametshin

    2017-03-01

    Full Text Available Iron ions with the energy of 40 keV have been implanted into colorless natural rock crystals to high fluencies of 1.0∙1017 and 1.5∙1017 ion/cm2. These crystals were selected from Svetlinsky deposits of the Southern Urals, which are well-known as minerals with high quality and low content of impurities. A radical change in the color of the crystals after iron-ion implantation and subsequent high-temperature annealing in air has been revealed. The origin of color changes has been studied by using optical methods, as well as Mössbauer and X-ray photoelectron spectroscopy. It has been established that the high-dose and high-energy flow of ions results in the formation of various kinds of structural defects on the surface layer of the matrix, such as electron-hole centers, as well as in the formation at a specific depth of the irradiated matrix of the ultrafine iron-containing phases with a structure, which is non-coherent to the structure of the original matrix. The subsequent high-temperature annealing of the implanted quartz has changed the color of the samples to orange-yellow. This color is similar to the color of natural citrine. The orange color richness of the heat-treated samples grew with increasing amounts of embedded iron impurity in the crystal. The nature of orange-yellow coloration of the implanted and annealed quartz plates can be explained by the formation of ultrafine hematite nanoparticles located in a layer at a depth of ~15 nm. The possibility of refining the color of minerals by ion-beam exposure has been discussed.

  1. Ion Implantation of Wide Bandgap Semiconductors.

    Science.gov (United States)

    1978-05-01

    u s i n g nomina l l v • S’~ xi lane in UHP argon and r o u g h ly eq u i va l e n t system cond it ions. We probably obtained a h o t t i t ’ of...dilute silane that is more c o nce n t rat e d han t he nomina l 1 .5Z reques ted . Both Auger ana l vs is and Rut her f o rd b ackscu t t er ing

  2. 4-rod RFQ linac for ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Fujisawa, Hiroshi; Hamamoto, Nariaki; Inouchi, Yutaka [Nisshin Electric Co. Ltd., Kyoto (Japan)

    1997-03-01

    A 34 MHz 4-rod RFQ linac system has been upgraded in both its rf power efficiency and beam intensity. The linac is able to accelerate in cw operation 0.83 mA of a B{sup +} ion beam from 0.03 to 0.91 MeV with transmission of 61 %. The rf power fed to the RFQ is 29 kW. The unloaded Q-value of the RFQ has been improved approximately 61 % to 5400 by copper-plating stainless steel cooling pipes in the RFQ cavity. (author)

  3. Conductivity kinetics and conductivity levels of ion implanted poly(paraphenylene) pellets

    Energy Technology Data Exchange (ETDEWEB)

    Le Huee, C. (LEPOFI, Faculte des Sciences, 87 Limoges (France)); Moreau, C. (LEPOFI, Faculte des Sciences, 87 Limoges (France)); Moliton, A. (LEPOFI, Faculte des Sciences, 87 Limoges (France)); Guille, B. (LEPOFI, Faculte des Sciences, 87 Limoges (France)); Froyer, G. (Lab OCM, CNET, 22 Lannion (France))

    1993-04-19

    We have studied the kinetics of the dc conductivity [sigma][sub dc] of PPP pellets after ion implantation versus implantation parameters (size of ions, current density, fluence). The main process occurs during the vacuum - open air transition: the higher the implantation parameters are, the larger the [sigma][sub dc] decrease is. Finally, the conductivity level is all the higher as the implanted ion is heavy. (orig.)

  4. Annealing of ion-implanted GaN

    CERN Document Server

    Burchard, A; Stötzler, A; Weissenborn, R; Deicher, M

    1999-01-01

    $^{111m}$Cd and $^{112}$Cd ions have been implanted into GaN. With photoluminescence spectroscopy and perturbed $\\gamma-\\gamma$-angular correlation spectroscopy (PAC) the reduction of implantation damage and the optical activation of the implants have been observed as a function of annealing temperature using different annealing methods. The use of N$_{2}$ or NH$_{3}$ atmosphere during annealing allows temperatures up to 1323k and 1373 K, respectively, but above 1200 K a strong loss of Cd from the GaN has been observed. Annealing GaN together with elementary Al forms a protective layer on the GaN surface allowing annealing temperatures up to 1570 K for 10 min. (11 refs).

  5. Gyrophase bunched ions in the plasma sheet

    Science.gov (United States)

    Wang, Zhiqiang; Zhai, Hao; Gao, Zhuxiu; Huang, Chaoyan

    2017-01-01

    Gyrophase bunched ions were first detected in the upstream region of the Earth's bow shock in the early 1980s which is formed by the microphysical process associated with reflected solar wind ions at the bow shock. Inside the magnetosphere, the results of computer simulations demonstrated that nonlinear wave-particle interaction can also result in the gyrophase bunching of particles. However, to date direct observations barely exist regarding this issue occurred inside the magnetosphere. In this paper, we report for the first time an event of gyrophase bunched ions observed in the near-Earth plasma sheet. The nongyrotropic distributions of ions were closely accompanied with the electromagnetic waves at the oxygen cyclotron frequency. The phase of bunched ions and the phase of waves mainly have very narrow phase differences (helicity with respect to the propagation direction, which agrees with the characteristic of electromagnetic ion cyclotron waves. The observation of O+ ions composition suggests that the oxygen band waves are excited due to the enhancements of the O+ ion density. This study suggests that the gyrophase bunching is a significant nonlinear effect that exists not only in the bow shock but also in the inner magnetosphere.

  6. Method of ions acceleration for laser-induced implantation of semiconductor materials

    Science.gov (United States)

    Czarnecka, A.; Badziak, J.; Parys, P.; Rosinski, M.; Wołowski, J.

    The application of electrostatic fields for the formation of laser-generated ions makes it possible to control the ion stream parameters in broad energy and current density ranges. It also permits to remove the useless ions from the ion stream designed for laser-induced implantation and deposition of layers of semiconductor materials. For acceleration of ions a special electrostatic system has been completed and tested at the Institute of Plasma Physics and Laser Microfusion (IPPLM). A repetitive Nd: glass laser with energy of ˜0.5 J in a 3.5 ns pulse, wavelength of 1.06 μm, repetition rate of up to 10 Hz and intensity on the target of up to 1011 W cm-2, has been recently employed to produce ions emitted from irradiated solid targets. The movable target holder was located inside the cylindrical box connected with a high-voltage source (up to 50 kV). The ions passing through the diaphragm in this box were accelerated in the system of electrodes in the electrostatic field formed in the gap between the box and a grid mounted at the end of the grounded cylindrical electrode. The parameters of the ion streams were measured with the use of several ion collectors and an electrostatic ion energy analyzer (IEA). The Ge ion stream attained energy of up to 30 keV and ion fluency 1011 ions/cm2 for one laser shot. The maximum ion charge state measured with the use of IEA was 3+.

  7. Identification and Manipulations of Impurity Ions in Magnesium Ion Plasma

    Science.gov (United States)

    Anderegg, F.; Affolter, M.; Driscoll, C. F.; Dubin, D. H. E.

    2011-10-01

    A nominally ``pure'' Mg24+ ion plasma accumulates impurity ions over periods of hours to days by charge exchange with residual background gas (P ~10-10 Torr) in a Penning-Malmberg trap. We use thermal cyclotron spectroscopy (TCS) to identify ion impurities, and observe spatial separation at low temperatures. TCS consists of applying rf bursts at the impurity cyclotron frequencies, with LIF measurement of the majority species heating due to collisions with the heated impurites. We find that for short bursts the heating is proportional to the burst amplitude squared, and to the square of the burst duration, as predicted by a simple single particle model. We spatially separate the impurities from the Magnesium ions by two different techniques: a) With laser cooling to T ions at larger radii. We typically observe a 5-20% ``hole'' in the center of the Mg plasma where the ``dark'' lower-mass impurities reside; and we directly observe the Mg25 and Mg26 at the outer edge of the Mg24 column. b) Resonant laser pressure in the z-direction pushes on the Mg24, and the species separates longitudinally when this laser force is greater than the mass-dependent centrifugal force. Supported by NSF PHY-0903877 and DOE DE-SC0002451.

  8. Design and Construction of a Microwave Plasma Ion Source

    CERN Document Server

    Çınar, Kamil

    2011-01-01

    This thesis is about the designing and constructing a microwave ion source. The ions are generated in a thermal and dense hydrogen plasma by microwave induction. The plasma is generated by using a microwave source with a frequency of 2.45 GHz and a power of 700 W. The generated microwave is pulsing with a frequency of 50 Hz. The designed and constructed microwave system generates hydrogen plasma in a pyrex plasma chamber. Moreover, an ion extraction unit is designed and constructed in order to extract the ions from the generated hydrogen plasma. The ion beam extraction is achieved and ion currents are measured. The plasma parameters are determined by a double Langmuir probe and the ion current is measured by a Faraday cup. The designed ion extraction unit is simulated by using the dimensions of the designed and constructed ion extraction unit in order to trace out the trajectories of the extracted ions.

  9. The enhanced anticoagulation for graphene induced by COOH(+) ion implantation.

    Science.gov (United States)

    Liu, Xiaoqi; Cao, Ye; Zhao, Mengli; Deng, Jianhua; Li, Xifei; Li, Dejun

    2015-01-01

    Graphene may have attractive properties for some biomedical applications, but its potential adverse biological effects, in particular, possible modulation when it comes in contact with blood, require further investigation. Little is known about the influence of exposure to COOH(+)-implanted graphene (COOH(+)/graphene) interacting with red blood cells and platelets. In this paper, COOH(+)/graphene was prepared by modified Hummers' method and implanted by COOH(+) ions. The structure and surface chemical and physical properties of COOH(+)/graphene were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and contact angle measurement. Systematic evaluation of anticoagulation, including in vitro platelet adhesion assays and hemolytic assays, proved that COOH(+)/graphene has significant anticoagulation. In addition, at the dose of 5 × 10(17) ions/cm(2), COOH(+)/graphene responded best on platelet adhesion, aggregation, and platelet activation.

  10. Ion implantation, a method for fabricating light guides in polymers

    Science.gov (United States)

    Kulish, J. R.; Franke, H.; Singh, Amarjit; Lessard, Roger A.; Knystautas, Emile J.

    1988-04-01

    Li+ and N+ ions were implanted into aliphatic polymethylmethacrylate (PMMA), polyvinylalcohol (PVA), and aromatic polyimide (PI) polycarbonate (PC) polymers in the energy range of 100-130 keV. Planar optical waveguides guiding between one and three modes were formed. For low implantation doses (≤ 1014 ions/cm2), total waveguide loss values at λ=633 nm were found to be less than 2 dB/cm. The changes in the refractive index were found to be very large (Δn≥0.05) in the case of PMMA and PVA. We interpret this change in refractive index as being due to the formation of aromatic compounds in the regions of electronic scattering.

  11. Carbon Multicharged Ion Generation from Laser Plasma

    Science.gov (United States)

    Balki, Oguzhan; Elsayed-Ali, Hani E.

    2014-10-01

    Multicharged ions (MCI) have potential uses in different areas such as microelectronics and medical physics. Carbon MCI therapy for cancer treatment is considered due to its localized energy delivery to hard-to-reach tumors at a minimal damage to surrounding tissues. We use a Q-switched Nd:YAG laser with 40 ns pulse width operated at 1064 nm to ablate a graphite target in ultrahigh vacuum. A time-of-flight energy analyzer followed by a Faraday cup is used to characterize the carbon MCI extracted from the laser plasma. The MCI charge state and energy distribution are obtained. With increase in the laser fluence, the ion charge states and ion energy are increased. Carbon MCI up to C+6 are observed along with carbon clusters. When an acceleration voltage is applied between the carbon target and a grounded mesh, ion extraction is observed to increase with the applied voltage. National Science Foundation.

  12. Highly antibacterial UHMWPE surfaces by implantation of titanium ions

    Energy Technology Data Exchange (ETDEWEB)

    Delle Side, D., E-mail: domenico.delleside@le.infn.it [LEAS, Dipartimento di Matematica e Fisica “Ennio de Giorgi”, Università del Salento, Lecce (Italy); Istituto Nazionale di Fisica Nucleare – Sezione di Lecce, Lecce (Italy); Nassisi, V.; Giuffreda, E.; Velardi, L. [LEAS, Dipartimento di Matematica e Fisica “Ennio de Giorgi”, Università del Salento, Lecce (Italy); Istituto Nazionale di Fisica Nucleare – Sezione di Lecce, Lecce (Italy); Alifano, P.; Talà, A.; Tredici, S.M. [Dipartimento di Scienze e Tecnologie Biologiche ed Ambientali, Università del Salento, Lecce (Italy)

    2014-07-15

    The spreading of pathogens represents a serious threat for human beings. Consequently, efficient antimicrobial surfaces are needed in order to reduce risks of contracting severe diseases. In this work we present the first evidences of a new technique to obtain a highly antibacterial Ultra High Molecular Weight Polyethylene (UHMWPE) based on a non-stoichiometric titanium oxide coating, visible-light responsive, obtained through ion implantation.

  13. Fe doped Magnetic Nanodiamonds made by Ion Implantation

    CERN Document Server

    Chen, ChienHsu; Jian, Hui-Shan; Niu, H

    2016-01-01

    Here we present a simple physical method to produce magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are distributed inside the NDs without affecting their crystal structure. So the NDs can be still functionalized through surface modification for targeted chemotherapy and the added magnetic property will make the NDs suitable for localized thermal treatment for cancer cells without the toxicity from the Fe atoms being directly in contact with the living tissue.

  14. Swept Line Electron Beam Annealing of Ion Implanted Semiconductors.

    Science.gov (United States)

    1982-07-01

    a pre- liminary study using silicon solar cells. This work was undertaken in cooperation with Dr. J. Eguren of the Instituto De Energia Solar , Madrid...device fabrication has been attempted. To date, resistors, capacitors, diodes, bipolar transistors, MOSFEs, and solar cells have been fabricated with...34 " 48 *Si Solar Cells Ruby PL P+ Ion-Implanted 49 Ruby PL Pulsed Diffused 50 :C

  15. RF characteristics of IHQ linac for heavy ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Ito, T.; Sasa, K.; Hayashizaki, N.; Isokawa, K.; Hattori, T. [Tokyo Inst. of Tech. (Japan). Research Lab. for Nuclear Reactors; Osvath, E. [Institute of Atomic Physics, Institute of Physics and Nuclear Engineering, P.O. Box MG-6, Bucharest (Romania); Schubert, H. [HSI, Tuerkenstrasse 28, 80333 Muenchen (Germany)

    1998-04-01

    At Tokyo institute of technology (TIT), an interdigital-H type quadrupole (IHQ) linac has been constructed for application in high energy heavy ion implantation. The linac can accelerate particles with charge to mass ratio greater than 1/16 from 0.24 MeV up to 1.6 MeV (for {sup 16}O{sup +}). As a result of the low power test, the resonant frequency is 36.26 MHz, the shunt impedance is 252 M{Omega}/m and therefore, the required power to accelerate {sup 16}O{sup +} ion is 39.5 kW. (orig.) 8 refs.

  16. RF characteristics of IHQ linac for heavy ion implantation

    Science.gov (United States)

    Ito, Takashi; Osvath, E.; Sasa, Kimikazu; Hayashizaki, Noriyosu; Isokawa, Katsushi; Schubert, H.; Hattori, Toshiyuki

    1998-04-01

    At Tokyo Institute of Technology (TIT), an Interdigital-H type Quadrupole (IHQ) linac has been constructed for application in high energy heavy ion implantation. The linac can accelerate particles with charge to mass ratio greater than 1/16 from 0.24 MeV up to 1.6 MeV (for 16O +). As a result of the low power test, the resonant frequency is 36.26 MHz, the shunt impedance is 252 MΩ/m and therefore, the required power to accelerate 16O + ion is 39.5 kW.

  17. Zinc-ion implanted and deposited titanium surfaces reduce adhesion of Streptococccus mutans

    Science.gov (United States)

    Xu, Juan; Ding, Gang; Li, Jinlu; Yang, Shenhui; Fang, Bisong; Sun, Hongchen; Zhou, Yanmin

    2010-10-01

    While titanium (Ti) is a commonly used dental implant material with advantageous biocompatible and mechanical properties, native Ti surfaces do not have the ability to prevent bacterial colonization. The objective of this study was to evaluate the chemical composition and bacterial adhesive properties of zinc (Zn) ion implanted and deposited Ti surfaces (Zn-PIIID-Ti) as potential dental implant materials. Surfaces of pure Ti (cp-Ti) were modified with increasing concentrations of Zn using plasma immersion ion implantation and deposition (PIIID), and elemental surface compositions were characterized by X-ray photoelectron spectrometry (XPS). To evaluate bacterial responses, Streptococcus mutans were seeded onto the modifiedTi surfaces for 48 h and subsequently observed by scanning electron microscopy. Relative numbers of bacteria on each surface were assessed by collecting the adhered bacteria, reculturing and counting colony forming units after 48 h on bacterial grade plates. Ti, oxygen and carbon elements were detected on all surfaces by XPS. Increased Zn signals were detected on Zn-PIIID-Ti surfaces, correlating with an increase of Zn-deposition time. Substantial numbers of S. mutans adhered to cp-Ti samples, whereas bacterial adhesion on Zn-PIIID-Ti surfaces signficantly decreased as the Zn concentration increased ( p S. mutans, a common bacterium in the oral environment.

  18. Modifications in surface, structural and mechanical properties of brass using laser induced Ni plasma as an ion source

    Directory of Open Access Journals (Sweden)

    Shahbaz Ahmad

    2016-03-01

    Full Text Available Laser induced Ni plasma has been employed as source of ion implantation for surface, structural and mechanical properties of brass. Excimer laser (248 nm, 20 ns, 120mJ and 30 Hz was used for the generation of Ni plasma. Thomson parabola technique was employed to estimate the energy of generated ions using CR39 as a detector. In response to stepwise increase in number of laser pulses from 3000 to 12000, the ion dose varies from 60 × 1013 to 84 × 1016 ions/cm2 with constant energy of 138 KeV. SEM analysis reveals the growth of nano/micro sized cavities, pores, pits, voids and cracks for the ion dose ranging from 60 × 1013 to 70 × 1015 ions/cm2. However, at maximum ion dose of 84 × 1016 ions/cm2 the granular morphology is observed. XRD analysis reveals that new phase of CuZnNi (200 is formed in the brass substrate after ion implantation. However, an anomalous trend in peak intensity, crystallite size, dislocation line density and induced stresses is observed in response to the implantation with various doses. The increase in ion dose causes to decrease the Yield Stress (YS, Ultimate Tensile Strength (UTS and hardness. However, for the maximum ion dose the highest values of these mechanical properties are achieved. The variations in the mechanical properties are correlated with surface and crystallographical changes of ion implanted brass.

  19. Temperature behavior of damage in sapphire implanted with light ions

    Energy Technology Data Exchange (ETDEWEB)

    Alves, E. [Ion Beam Laboratory, Instituto Tecnologico e Nuclear, Sacavem 2686-953 (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Lisbon (Portugal)], E-mail: ealves@itn.pt; Marques, C. [Ion Beam Laboratory, Instituto Tecnologico e Nuclear, Sacavem 2686-953 (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Lisbon (Portugal); Safran, G. [Research Institute for Technical Physics and Materials Science, H-1525 Budapest (Hungary); McHargue, Carl J. [University of Tennessee, Knoxville, TN 37996-0750 (United States)

    2009-05-01

    In this study, we compare and discuss the defect behavior of sapphire single crystals implanted with different fluences (1 x 10{sup 16}-1 x 10{sup 17} cm{sup -2}) of carbon and nitrogen with 150 keV. The implantation temperatures were RT, 500 deg. C and 1000 deg. C to study the influence of temperature on the defect structures. For all the ions the Rutherford backscattering-channeling (RBS-C) results indicate a surface region with low residual disorder in the Al-sublattice. Near the end of range the channeled spectrum almost reaches the random indicating a high damage level for fluences of 1 x 10{sup 17} cm{sup -2}. The transmission electron microscopy (TEM) photographs show a layered contrast feature for the C implanted sample where a buried amorphous region is present. For the N implanted sample the Electron Energy Loss Spectroscopy (EELS) elemental mapping give evidence for the presence of a buried damage layer decorated with bubbles. Samples implanted at high temperatures (500 deg. C and 1000 deg. C) show a strong contrast fluctuation indicating a defective crystalline structure of sapphire.

  20. Ion beam system for implanting industrial products of various shapes

    Science.gov (United States)

    Denholm, A. S.; Wittkower, A. B.

    1985-01-01

    Implantation of metals and ceramics with ions of nitrogen and other species has improved surface properties such as friction, wear and corrosion in numerous industrial applications. Zymet has built a production machine to take advantage of this process which can implant a 2 × 10 17 ions/cm 2 dose of nitrogen ions into a 20 cm × 20 cm area in about 30 min using a 100 keV beam. Treatment is accomplished by mounting the product on a cooled, tiltable, turntable which rotates continuously, or is indexed in 15° steps to expose different surfaces in fixed position. Product cooling is accomplished by using a chilled eutectic metal to mount and grip the variously shaped objects. A high voltage supply capable of 10 mA at 100 kV is used, and the equipment is microcomputer controlled via serial light links. All important machine parameters are presented in sequenced displays on a CRT. Uniformity of treatment and accumulated dose are monitored by a Faraday cup system which provides the microprocessor with data for display of time to completion on the process screen. For routine implants the operator requires only two buttons; one for chamber vacuum control, and the other for process start and stop.

  1. Electrical properties of oxygen ion-implanted InP

    Science.gov (United States)

    He, L.; Anderson, W. A.

    1992-10-01

    The effect of oxygen ion implantation on defect levels and the electrical properties of undoped InP ( n-type) and Sn-doped InP have been investigated as a function of postimplant annealing at temperatures of 300 and 400° C. The surface interruption by ion bombardment was studied by a non-invasive optical technique—photoreflectance (PR) spectroscopy. Current-voltage (I-V) characterization and deep level transient spectros-copy (DLTS) were carried out. The free carrier compensation mechanism was studied from the microstructure behavior of defect levels associated with O+ implantation. Free carriers may be trapped in both residual and ion-bombardment-induced defect sites. Rapid thermal annealing (RTA) performed at different temperatures showed that if residual traps were removed by annealing, the compensation efficiency will be enhanced. Post-implant RTA treatment showed that at the higher temperature (400°C), trapped carriers may be re-excited, resulting in a weakened compensation. Comparing the results of undoped and Sn-doped InP indicated that the carrier compensation effect is substrate doping dependent.

  2. The effect of ion implantation on cellular adhesion.

    Science.gov (United States)

    Howlett, C R; Evans, M D; Wildish, K L; Kelly, J C; Fisher, L R; Francis, G W; Best, D J

    1993-01-01

    As there are only a finite number of materials suitable for orthopaedic reconstruction, considerable effort has been devoted recently to investigating ways of altering the surface chemistry of prosthetic materials without altering their bulk properties. Ion beam implantation is one such technique which is appropriate for orthopaedic reconstructive materials. This paper investigates the early effect of ion beam modification on cellular attachment of bone derived cells using a prototype device which measures the strength of attachment of individual cells to a silicon substratum. The results point to several conclusions. (1) There is no evidence that ion beam implantation with nitrogen, phosphorus, manganese or magnesium produces increased adhesion of human bone derived cells. (2) Surface etching with hydrofluoric acid, electron bombardment and thermal oxidation increases the strength of attachment between cells and substrata. (3) There is a correlation between wettability and rate of cellular attachment to oxygen implanted substrata during the first 2 h after cellular seeding. However, the increase in cellular attachment cannot be entirely explained by the change in critical surface tension or via increased fibronectin attachment to the substrata.

  3. Nanoscale patterns produced by self-sputtering of solid surfaces: The effect of ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Bradley, R. Mark [Department of Physics, Colorado State University, Fort Collins, Colorado 80523 (United States); Hofsäss, Hans [II. Physikalisches Institut, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany)

    2016-08-21

    A theory of the effect that ion implantation has on the patterns produced by ion bombardment of solid surfaces is introduced. For simplicity, the case of self-sputtering of an elemental material is studied. We find that implantation of self-ions has a destabilizing effect along the projected beam direction for angles of incidence θ that exceed a critical value. In the transverse direction, ion implantation has a stabilizing influence for all θ.

  4. Morphology Control and Optical Absorption Properties of Ag Nanoparticles by Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    G.X. Cai; F. Ren; X.H. Xiao; L.X. Fan; X.D. Zhou; C.Z. Jiang

    2009-01-01

    Ion implantation is a powerful method for fabricating nanoparticles in dielectric. For the actual application of nanoparticle composites, a careful control of nanoparticles has to be achieved. In this letter, the size, distribution and morphology of Ag nanoparticles are controlled by controlling the ion current density, ion implantation sequence and ion irradiation dose. Single layer Ag nanoparticles are formed by Ag~+ ion implantation at current density of 2.5 μA/cm~2. By Ag and Cu ions sequential implantation, the size of single layer Ag nanoparticles increases. While, by Cu and Ag ions sequential implantation, uniform Ag nanoparticles with wide distribution are formed. The morphology of Ag nanoparticles changes to hollow and sandwiched nanoparticles by Cu~+ ion irradiation to doses of 3×10~(16) and 5×10~(16) ions/cm~2. The optical absorption properties of Ag nanoparticles are also tailored by these ways.

  5. Fundamental plasma emission involving ion sound waves

    Science.gov (United States)

    Cairns, Iver H.

    1987-01-01

    The theory for fundamental plasma emission by the three-wave processes L + or - S to T (where L, S and T denote Langmuir, ion sound and transverse waves, respectively) is developed. Kinematic constraints on the characteristics and growth lengths of waves participating in the wave processes are identified. In addition the rates, path-integrated wave temperatures, and limits on the brightness temperature of the radiation are derived.

  6. Characterization and simulation studies on high tilt ion implantation for precision halo implant applications

    Energy Technology Data Exchange (ETDEWEB)

    Guo, B.N. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States)]. E-mail: baonian.guo@vsea.com; Zhao, Z.Y. [Spansion LLC, 5204 E. Ben White Blvd., Austin, TX 78741 (United States); Falk, S. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States); Liu, J. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States); Shim, K.H. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States); Jeong, U. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States); Mehta, S. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States)

    2007-08-15

    Precision dopant placement at high tilt angles for halo applications is required in the fabrication of advanced devices to achieve better transistor characteristics, such as suppression of short channel effects, V {sub t} control and drive current. However, monitoring high tilt implants is not popular in semiconductor fabs, even though most have started monitoring zero-tilt implants in the recent couple of years. In this paper, the authors explore the possibilities of using high tilt angles with higher Miller Index channels. As an example, axial channeling along the <1 1 2> direction is used to evaluate the angle control performance of the VIISta 810EHP medium current ion implanter. Crystal-TRIM (a Monte Carlo simulation code) calculations are compared with experimental SIMS (Secondary Ion Mass Spectrometry) profiles. In addition, the effects of wafer orientation on the platen and wafer mis-cut on the dopant profiles are discussed. Metrology characterization, such as ThermaWave{sup TM} and SIMS, of the <1 1 2> ion channeling is presented.

  7. Influence of platelet-rich plasma on dental implants. Osseointegration in well-controlled diabetic patients.

    Science.gov (United States)

    Malik, A; Shaari, R; Rahman, S A; Aljuboori, M J

    2012-12-01

    The purpose of this study is to evaluate the effect of platelet-rich plasma (PRP) on the osseointegration of dental implants in diabetic patients. A split-mouth design was employed in all 14 patients, with each patient receiving two mini implants. A PRP-coated mini implant was installed in one quadrant as a trial and a plain mini implant was added in the opposite quadrant to serve as a control. Radiographic evaluation was done at 3, 6, and 9 weeks after implant placement. Radiographic density is measured at five points around the implants, repeatedly. Results showed no statistically significant difference between the two groups of implants. The minimally invasive mini implants successfully maintained integration at the end of 9 weeks. There were no cases of implant failure. The results of this study suggest that platelet-rich plasma implant coating has no significant effect in reducing the time for mini implant osseointegration in diabetic patients.

  8. Synthesis of amorphous carbon nitride by ion implantation

    Institute of Scientific and Technical Information of China (English)

    ChenZ.; OlofinjanaA.; BellJ

    2001-01-01

    N2+ were implanted into diamondlike carbon (DLC) films in an attempt to synthesizeamorphous carbon nitride. The DLC films were previously deposited on steel substrate by using anion beam sputtering deposition (IBSD) where a single Kaufman type ion gun with argon sourcewas used to sputter a graphite target and simultaneously bombard the growing film. Parallel to theion implantation route, amorphous carbon nitride films were also synthesized by directly using thereactive ion beam sputtering deposition (RIBSD) with nitrogen source to incorporate nitrogen intothe film. The structure and properties of the films were determined by using Raman spectroscopy,XPS and nano-indentation. The implantation of N2+ into a-C films offers a higher hardness thanthat directly synthesized by RIBSD, probably through an increase in sp3/sp2 ratio and in the pro-portion of nitrogen atoms chemically bonding to carbon atoms. The results show that althoughthere are differences in film composition, structure and properties between these two processes,both methods can be used for synthesis of nitrogen-containing amorphous DLC thin films whichsignificantly modify the substrate surface.

  9. Bimodal distribution of damage morphology generated by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Mok, K.R.C. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain) and Department of Chemical and Biomolecular Engineering, National University of Singapore, Engineering Drive 4, Singapore 117576 (Singapore)]. E-mail: g0202446@nus.edu.sg; Jaraiz, M. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Martin-Bragado, I. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Synopsys, Karl-Hammerschmidt Strasse 34, D-85609 Aschheim/Dornach (Germany); Rubio, J.E. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Castrillo, P. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Pinacho, R. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Srinivasan, M.P. [Department of Chemical and Biomolecular Engineering, National University of Singapore, Engineering Drive 4, Singapore 117576 (Singapore); Benistant, F. [Chartered Semiconductor Manufacturing, 60 Woodlands Industrial Park D Street 2, Singapore 738406 (Singapore)

    2005-12-05

    A nucleation and evolution model of damage based on amorphous pockets (APs) has recently been developed and implemented in an atomistic kinetic Monte Carlo simulator. In the model, APs are disordered structures (I {sub n}V {sub m}), which are agglomerates of interstitials (I) and vacancies (V). This model has been used to study the composition and size distribution of APs during different ion implantations. Depending strongly on the dose rate, ion mass and implant temperature, the APs can evolve to a defect population where the agglomerates have a similar number of I and V (n {approx} m), or to a defect population with pure I (m {approx} 0) and pure V (n {approx} 0) clusters, or a mixture of APs and clusters. This behaviour corresponds to a bimodal (APs/clusters) distribution of damage. As the AP have different thermal stability compared to the I and V clusters, the same damage concentration obtained through different implant conditions has a different damage morphology and, consequently, exhibit a different resistance to subsequent thermal treatments.

  10. Lateral Magnetically Modulated Multilayers by Combining Ion Implantation and Lithography.

    Science.gov (United States)

    Menéndez, Enric; Modarresi, Hiwa; Petermann, Claire; Nogués, Josep; Domingo, Neus; Liu, Haoliang; Kirby, Brian J; Mohd, Amir Syed; Salhi, Zahir; Babcock, Earl; Mattauch, Stefan; Van Haesendonck, Chris; Vantomme, André; Temst, Kristiaan

    2017-03-01

    The combination of lithography and ion implantation is demonstrated to be a suitable method to prepare lateral multilayers. A laterally, compositionally, and magnetically modulated microscale pattern consisting of alternating Co (1.6 µm wide) and Co-CoO (2.4 µm wide) lines has been obtained by oxygen ion implantation into a lithographically masked Au-sandwiched Co thin film. Magnetoresistance along the lines (i.e., current and applied magnetic field are parallel to the lines) reveals an effective positive giant magnetoresistance (GMR) behavior at room temperature. Conversely, anisotropic magnetoresistance and GMR contributions are distinguished at low temperature (i.e., 10 K) since the O-implanted areas become exchange coupled. This planar GMR is principally ascribed to the spatial modulation of coercivity in a spring-magnet-type configuration, which results in 180° Néel extrinsic domain walls at the Co/Co-CoO interfaces. The versatility, in terms of pattern size, morphology, and composition adjustment, of this method offers a unique route to fabricate planar systems for, among others, spintronic research and applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Titanium Nitride and Nitrogen Ion Implanted Coated Dental Materials

    Directory of Open Access Journals (Sweden)

    David W. Berzins

    2012-07-01

    Full Text Available Titanium nitride and/or nitrogen ion implanted coated dental materials have been investigated since the mid-1980s and considered in various applications in dentistry such as implants, abutments, orthodontic wires, endodontic files, periodontal/oral hygiene instruments, and casting alloys for fixed restorations. Multiple methodologies have been employed to create the coatings, but detailed structural analysis of the coatings is generally lacking in the dental literature. Depending on application, the purpose of the coating is to provide increased surface hardness, abrasion/wear resistance, esthetics, and corrosion resistance, lower friction, as well as greater beneficial interaction with adjacent biological and material substrates. While many studies have reported on the achievement of these properties, a consensus is not always clear. Additionally, few studies have been conducted to assess the efficacy of the coatings in a clinical setting. Overall, titanium nitride and/or nitrogen ion implanted coated dental materials potentially offer advantages over uncoated counterparts, but more investigation is needed to document the structure of the coatings and their clinical effectiveness.

  12. Photoluminescence in silicon implanted with silicon ions at amorphizing doses

    Energy Technology Data Exchange (ETDEWEB)

    Sobolev, N. A., E-mail: nick@sobolev.ioffe.rssi.ru; Kalyadin, A. E.; Kyutt, R. N.; Sakharov, V. I.; Serenkov, I. T.; Shek, E. I.; Afrosimov, V. V. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Tetel' baum, D. I. [Lobachevsky State University, Physicotechnical Research Institute (Russian Federation)

    2011-09-15

    Luminescent and structural properties of n-FZ-Si and n-Cz-Si implanted with Si ions at amorphizing doses and annealed at 1100 Degree-Sign C in a chlorine-containing atmosphere have been studied. An analysis of proton Rutherford backscattering spectra of implanted samples demonstrated that an amorphous layer is formed, and its position and thickness depend on the implantation dose. An X-ray diffraction analysis revealed that defects of the interstitial type are formed in the samples upon annealing. Photoluminescence spectra measured at 78 K and low excitation levels are dominated by the dislocation-related line D1, which is also observed at 300 K. The peak position of this line, its full width at half-maximum, and intensity depend on the conduction type of Si and implantation dose. As the luminescence excitation power is raised, a continuous band appears in the spectrum. A model is suggested that explains the fundamental aspects of the behavior of the photoluminescence spectra in relation to the experimental conditions.

  13. Modification of anti-bacterial surface properties of textile polymers by vacuum arc ion source implantation

    Energy Technology Data Exchange (ETDEWEB)

    Nikolaev, A.G., E-mail: nik@opee.hcei.tsc.ru [High Current Electronics Institute, Siberian Branch of the Russian Academy of Sciences, Tomsk 634055 (Russian Federation); Yushkov, G.Yu.; Oks, E.M. [High Current Electronics Institute, Siberian Branch of the Russian Academy of Sciences, Tomsk 634055 (Russian Federation); Oztarhan, A. [Izmir University, Izmir 35140 (Turkey); Akpek, A.; Hames-Kocabas, E.; Urkac, E.S. [Bioengineering Department, Ege University, Bornova 35100, Izmir (Turkey); Brown, I.G. [Lawrence Berkeley National Laboratory, Berkeley, CA 94708 (United States)

    2014-08-15

    Highlights: • Ion implantation. • Anti-bacterial properties. • Textile polymer. • Vacuum arc ion source. - Abstract: Ion implantation provides an important technology for the modification of material surface properties. The vacuum arc ion source is a unique instrument for the generation of intense beams of metal ions as well as gaseous ions, including mixed metal–gas beams with controllable metal:gas ion ratio. Here we describe our exploratory work on the application of vacuum arc ion source-generated ion beams for ion implantation into polymer textile materials for modification of their biological cell compatibility surface properties. We have investigated two specific aspects of cell compatibility: (i) enhancement of the antibacterial characteristics (we chose to use Staphylococcus aureus bacteria) of ion implanted polymer textile fabric, and (ii) the “inverse” concern of enhancement of neural cell growth rate (we chose Rat B-35 neuroblastoma cells) on ion implanted polymer textile. The results of both investigations were positive, with implantation-generated antibacterial efficiency factor up to about 90%, fully comparable to alternative conventional (non-implantation) approaches and with some potentially important advantages over the conventional approach; and with enhancement of neural cell growth rate of up to a factor of 3.5 when grown on suitably implanted polymer textile material.

  14. Ions beams and ferroelectric plasma sources

    Science.gov (United States)

    Stepanov, Anton

    Near-perfect space-charge neutralization is required for the transverse compression of high perveance ion beams for ion-beam-driven warm dense matter experiments, such as the Neutralized Drift Compression eXperiment (NDCX). Neutralization can be accomplished by introducing a plasma in the beam path, which provides free electrons that compensate the positive space charge of the ion beam. In this thesis, charge neutralization of a 40 keV, perveance-dominated Ar+ beam by a Ferroelectric Plasma Source (FEPS) is investigated. First, the parameters of the ion beam, such as divergence due to the extraction optics, charge neutralization fraction, and emittance were measured. The ion beam was propagated through the FEPS plasma, and the effects of charge neutralization were inferred from time-resolved measurements of the transverse beam profile. In addition, the dependence of FEPS plasma parameters on the configuration of the driving pulser circuit was studied to optimize pulser design. An ion accelerator was constructed that produced a 30-50 keV Ar + beam with pulse duration angle divergence of 0.87°. The measurements show that near-perfect charge neutralization with FEPS can be attained. No loss of ion beam current was detected, indicating the absence of a neutral cloud in the region of beam propagation, which would cause beam loss to charge exchange collisions. This provides evidence in favor of using FEPS in a future Heavy Ion Fusion accelerator. The FEPS discharge was investigated based on current-voltage measurements in the pulser circuit. Different values of series resistance and storage capacitance in the pulser circuit were used. The charged particle current emitted by the FEPS into vacuum was measured from the difference in forward and return currents in the driving circuit. It was found that FEPS is an emitter of negative charge, and that electron current emission begins approximately 0.5 mus after the fast-rising high voltage pulse is applied and lasts for tens

  15. The effect of metal ion implantation on the surface mechanical properties of Mylar (PET)

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, W.; Sood, D.K. [Royal Melbourne Inst. of Tech., VIC (Australia); Yao, X.; Brown, I.G. [California Univ., Berkeley, CA (United States). Lawrence Berkeley Lab.

    1993-12-31

    Ion implantation of polymers leads to the formation of new carbonaceous materials, the revolution during implantation of various species consists of (1) ion beam induced damage: chain scission, crosslinking, molecular emission of volatile elements and compounds, stoichiometric change in the surface layer of pristine polymers; and (2) chemical effect between ion and target materials: microalloying and precipitation. Literature regarding ion implanted polymers shows that the reorganisation of the carbon network after implantation can dramatically modify several properties of pristine polymers solubility, molecular weight, and electrical, optical and mechanical properties. However, ion implantation of polymers is actually a very complex interaction which depends on not only ion species, implantation condition, but also polymer type and specific structure. In this paper the effect of Ag or Ti ions implantation on surface mechanical properties of PET (polyethylenne terephthalate) polymer is reported. There was a clear deterioration in wear resistance after implantation of both Ag and Ti ions. It is suggested that the increment of wear after implantation may result from not only ion damage but also chemical effect between ion and target material. 3 refs., 1 tab., 2 figs.

  16. Ion beam technology applications study. [ion impact, implantation, and surface finishing

    Science.gov (United States)

    Sellen, J. M., Jr.; Zafran, S.; Komatsu, G. K.

    1978-01-01

    Specific perceptions and possible ion beam technology applications were obtained as a result of a literature search and contact interviews with various institutions and individuals which took place over a 5-month period. The use of broad beam electron bombardment ion sources is assessed for materials deposition, removal, and alteration. Special techniques examined include: (1) cleaning, cutting, and texturing for surface treatment; (2) crosslinking of polymers, stress relief in deposited layers, and the creation of defect states in crystalline material by ion impact; and (3) ion implantation during epitaxial growth and the deposition of neutral materials sputtered by the ion beam. The aspects, advantages, and disadvantages of ion beam technology and the competitive role of alternative technologies are discussed.

  17. Characterization of low temperature metallic magnetic calorimeters having gold absorbers with implanted $^{163}$Ho ions

    CERN Document Server

    Gastaldo, L; von Seggern, F; Porst, J P; Schäfer, S; Pies, C; Kempf, S; Wolf, T; Fleischmann, A; Enss, C; Herlert, A; Johnston, K

    2013-01-01

    For the first time we have investigated the behavior of fully micro-fabricated low temperature metallic magnetic calorimeters (MMCs) after undergoing an ion-implantation process. This experiment had the aim to show the possibility to perform a high precision calorimetric measurement of the energy spectrum following the electron capture of $^{163}$Ho using MMCs having the radioactive $^{163}$Ho ions implanted in the absorber. The implantation of $^{163}$Ho ions was performed at ISOLDE-CERN. The performance of a detector that underwent an ion-implantation process is compared to the one of a detector without implanted ions. The results show that the implantation dose of ions used in this experiment does not compromise the properties of the detector. In addition an optimized detector design for future $^{163}$Ho experiments is presented.

  18. Ion-beam characterization of He implanted into nuclear matrices

    Energy Technology Data Exchange (ETDEWEB)

    Pantelica, D.; Thome, L. E-mail: thome@csnsm.in2p3.fr; Enescu, S.E.; Negoita, F.; Ionescu, P.; Stefan, I.; Gentils, A

    2004-06-01

    The behavior of helium produced by the disintegration of actinides is a very important issue in the management of radioactive waste arising from nuclear reactors. The experimental techniques generally used to determine He profiles, based on standard nuclear reaction analysis, are either time consuming or lacking in accuracy. Elastic recoil detection analysis (ERDA) with high-energy heavy ions offers the possibility to extract helium profiles in a simpler way. This paper presents results obtained in the case of spinel single crystals implanted with He ions at several fluences (2 x 10{sup 16} and 5 x 10{sup 16} cm{sup -2}), providing different He concentrations ({approx}2 and 5 at.%, respectively). Helium depth profiles were measured by ERDA using high-energy Cu ions, whereas the damage induced by implantation was analyzed by classical Rutherford backscattering and channeling (RBS/C). Good He profiles were recorded, even at the smallest fluence used. Moreover, the combination of ERDA and RBS/C allows one to correlate He profiles and damage distributions.

  19. Antibacterial PVD coatings doped with silver by ion implantation

    Science.gov (United States)

    Osés, J.; Palacio, J. F.; Kulkarni, S.; Medrano, A.; García, J. A.; Rodríguez, R.

    2014-08-01

    The antibacterial effect of certain metal ions, like silver, has been exploited since antiquity. Obviously, the ways to employ the biocide activity of this element have evolved throughout time and it is currently used in a wide range of clinical applications. The work presented here reports the results of an investigation focused on combining the protective properties of PVD coatings with the biocide property of silver, applied by ion implantation. For this purpose, chromium nitride layers were doped with silver implanted at two different doses (5 × 1016 and 1 × 1017 ion/cm2) at 100 keV of energy and perpendicular incidence. Full characterization of the coatings was performed to determine its topographical and mechanical properties. The concentration profile of Ag was analyzed by GD-OES. The thickness of the layers, nano-hardness, roughness, wear resistance and coefficient of friction were measured. Finally, the anti-bacterial efficacy of the coatings was determined following the JIS Z-2801:2010 Standard. The results provide clear insights into the efficacy of silver for antibacterial purposes, as well as on its influence in the mechanical and tribological behaviour of the coatings matrix.

  20. NANOMECHANICAL AND CORROSION PROPERTIES OF ZK60 MAGNESIUM ALLOY IMPROVED BY GD ION IMPLANTATION

    OpenAIRE

    XUE WEI TAO; ZHANG ZHONG WANG; XIAO BO ZHANG; ZHI XIN BA; YA MEI WANG

    2014-01-01

    Gadolinium (Gd) ion implantation with doses from 2.5 × 1016 to 1 × 1017 ions/cm2 into ZK60 magnesium alloy was carried out to improve its surface properties. X-ray photoelectron spectroscopy (XPS), nanoindenter, electrochemical workstation and scanning electron microscope (SEM) were applied to analyze the chemical composition, nanomechanical properties and corrosion characteristics of the implanted layer. The results indicate that Gd ion implantation produces a hybrid-structure protective lay...

  1. Structure analysis of bimetallic Co-Au nanoparticles formed by sequential ion implantation

    Science.gov (United States)

    Chen, Hua-jian; Wang, Yu-hua; Zhang, Xiao-jian; Song, Shu-peng; chen, Hong; Zhang, Ke; Xiong, Zu-zhao; Ji, Ling-ling; Dai, Hou-mei; Wang, Deng-jing; Lu, Jian-duo; Wang, Ru-wu; Zheng, Li-rong

    2016-08-01

    Co-Au alloy Metallic nanoparticles (MNPs) are formed by sequential ion implantation of Co and Au into silica glass at room temperature. The ion ranges of Au ions implantation process have been displayed to show the ion distribution. We have used the atomic force microscopy (AFM) and transmission electron microscopy (TEM) to investigate the formation of bimetallic nanoparticles. The extended X-ray absorption fine structure (EXAFS) has been used to study the local structural information of bimetallic nanoparticles. With the increase of Au ion implantation, the local environments of Co ions are changed enormously. Hence, three oscillations, respectively, Co-O, Co-Co and Co-Au coordination are determined.

  2. Corrosion resistance enhancement of SAE 1020 steel after Chromium implantation by nitrogen ion recoil

    Directory of Open Access Journals (Sweden)

    Geraldo Francisco Gomes

    2005-12-01

    Full Text Available SAE 1020 construction steel is widely used as mortar reinforcement and small machine parts, but aside good surface properties as high ductility, hardness and wear resistance, its surface is prone to severe corrosion. As it is known, Chromium in amount over 12%-13% in the Fe alloys renders them resistance to several corrosive attacks. SAE 1020 samples were recovered with Chromium film and then bombarded either by nitrogen Ion Beam (IB or Plasma Immersion Ion Implantation (PIII to recoil implant Cr atoms in the Fe matrix. Samples treated by 100 keV N+ IB showed irregular, thin Cr profile, remaining a part of the film on the surface, to about 10 nm. Samples treated by 40 kV N PIII presented Cr layer of about 18% at., ranging to around 90 nm. Cr of the film was implanted in the Fe matrix in an almost flat profile. Results of corrosion test showed good performance of the PIII treated sample. The IB treated sample showed some enhancement over the non-treated reference and the only Cr film deposited sample showed no modification on the corrosion behavior as compared to the non-treated reference sample.

  3. Ion acceleration in non-equilibrium plasmas driven by fast drifting electron

    Energy Technology Data Exchange (ETDEWEB)

    Castro, G. [INFN- Laboratori Nazionali del Sud, via S.Sofia 62, 95123 Catania (Italy); Università degli Studi di Catania, Dipartimento di Fisica e Astronomia, V. S.Sofia 64, 95123 Catania (Italy); Di Bartolo, F., E-mail: fdibartolo@unime.it [Università di Messina, V.le F. Stagno D’Alcontres 31, 98166, Messina (Italy); Gambino, N. [INFN- Laboratori Nazionali del Sud, via S.Sofia 62, 95123 Catania (Italy); Università degli Studi di Catania, Dipartimento di Metodologie Fisiche e Chimiche per L’ingegneria, Viale A.Doria 6, 95125 Catania (Italy); Mascali, D. [INFN- Laboratori Nazionali del Sud, via S.Sofia 62, 95123 Catania (Italy); CSFNSM, Viale A. Doria 6, 95125 Catania (Italy); Romano, F.P. [INFN- Laboratori Nazionali del Sud, via S.Sofia 62, 95123 Catania (Italy); CNR-IBAM Via Biblioteca 4, 95124 Catania (Italy); Anzalone, A.; Celona, L.; Gammino, S. [INFN- Laboratori Nazionali del Sud, via S.Sofia 62, 95123 Catania (Italy); Di Giugno, R. [INFN- Laboratori Nazionali del Sud, via S.Sofia 62, 95123 Catania (Italy); Università degli Studi di Catania, Dipartimento di Fisica e Astronomia, V. S.Sofia 64, 95123 Catania (Italy); Lanaia, D. [INFN- Laboratori Nazionali del Sud, via S.Sofia 62, 95123 Catania (Italy); Miracoli, R. [INFN- Laboratori Nazionali del Sud, via S.Sofia 62, 95123 Catania (Italy); Università degli Studi di Catania, Dipartimento di Fisica e Astronomia, V. S.Sofia 64, 95123 Catania (Italy); Serafino, T. [CSFNSM, Viale A. Doria 6, 95125 Catania (Italy); Tudisco, S. [INFN- Laboratori Nazionali del Sud, via S.Sofia 62, 95123 Catania (Italy); CSFNSM, Viale A. Doria 6, 95125 Catania (Italy)

    2013-05-01

    We hereby present results on ion acceleration mechanisms in non equilibrium plasmas generated by microwaves or high intensity laser pulses. Experiments point out that in magnetized plasmas X–B conversion takes place for under resonance values of the magnetic field, i.e. an electromagnetic mode is converted into an electrostatic wave. The strong self-generated electric field, of the order of 10{sup 7} V/m, causes a E × B drift which accelerates both ions and electrons, as it is evident by localized sputtering in the plasma chamber. These fields are similar (in magnitude) to the ones obtainable in laser generated plasmas at intensity of 10{sup 12} W/cm{sup 2}. In this latter case, we observe that the acceleration mechanism is driven by electrons drifting much faster than plasma bulk, thus generating an extremely strong electric field ∼10{sup 7} V/m. The two experiments confirm that ions acceleration at low energy is possible with table-top devices and following complementary techniques: i.e. by using microwave-driven (producing CW beams) plasmas, or non-equilibrium laser-driven plasmas (producing pulsed beams). Possible applications involve ion implantation, materials surface modifications, ion beam assisted lithography, etc.

  4. Surface modification of titanium and titanium alloys by ion implantation.

    Science.gov (United States)

    Rautray, Tapash R; Narayanan, R; Kwon, Tae-Yub; Kim, Kyo-Han

    2010-05-01

    Titanium and titanium alloys are widely used in biomedical devices and components, especially as hard tissue replacements as well as in cardiac and cardiovascular applications, because of their desirable properties, such as relatively low modulus, good fatigue strength, formability, machinability, corrosion resistance, and biocompatibility. However, titanium and its alloys cannot meet all of the clinical requirements. Therefore, to improve the biological, chemical, and mechanical properties, surface modification is often performed. In view of this, the current review casts new light on surface modification of titanium and titanium alloys by ion beam implantation.

  5. Particle orbit simulation for high energy heavy ion implanter

    Energy Technology Data Exchange (ETDEWEB)

    Ito, Takashi; Hattori, Toshiyuki; Oguri, Yoshiyuki; Sasa, Kimikazu; Hayashizaki, Noriyosu [Tokyo Inst. of Tech. (Japan). Research Lab. for Nuclear Reactors; Osvath, E.

    1995-10-01

    We have studied an Interdigital-H type Quadrupole (IHQ) linac structure for application to heavy ion implanter. It is possible to vary the output energy by changing the voltage between gaps only. Operating frequency of this IHQ linac is 30 MHz and the synchronous phase is -30deg{r_brace} with the exception of -90deg{r_brace} at the first gap that works as a bunching section. The calculated results show that the output energy can be varied from 0.48 MeV (30 keV/u) to 1.6 MeV (100 keV/u) for {sup 16}O{sup +}. (author).

  6. Ion Implantation in III-V Compound Semiconductors

    Science.gov (United States)

    1984-09-01

    340 keV H + -0 Ga P  O UES-723-292 !:• (H o>ray *P-K X - rayO Ga-K X -ray iii! RBS * ..I -iO.. 0 10I to1. 01 • .0 -. I0 1 LI =i, O I 0 01 0.J 10...Identity by blo ," pume) Ion Implantation, GaAs, Hall effect, electrical resistivity, Rutherford Backscattering (RBS), channeling, Proton induced x -ray...Mebility (jH) upon Aiinealing Temperature (TA) for 1 X 101 /cm• Dose Samples of GaAs:Mg with Three Different Capping Methods 33 p 14 Dependence of Surface

  7. Detection of ion implanted patterns in silicon using STM

    Science.gov (United States)

    Kim, Hyun-Soo; Ramanayaka, A. N.; Dwyer, K. J.; Stewart, M. D., Jr.; Pomeroy, J. M.

    Ion implanted regions in silicon are scanned using STM to detect features which will facilitate in-situ overlay and alignment of STM hydrogen patterned nano-devices. STM hydrogen lithography is used to make atomically precise devices such as single electron transistors and single atom qubits. However, with currently available imaging techniques, we are limited to make devices on a single plane using STM lithography. In-situ detection of high local doping concentrations using STM will allow precise alignment between the multiple layers of buried nano-devices and metal electrodes.

  8. The Gridless Plasma Ion Source(GIS)for Plasma Ion Assisted Optical Coating

    Institute of Scientific and Technical Information of China (English)

    尤大伟; 李晓谦; 王宇; 林永昌

    2004-01-01

    High-quality optical coating is a key technology for modern optics. Ion-assisted deposition technology was used to improve the vaporized coating in 1980's. The GIS (gridless ion source), which is an advanced plasma source for producing a high-quality optical coating in large area, can produce a large area uniformity>1000 mm(diameter), a high ion current density ~ 0.5mA/cm2, 20 eV ~ 200 eV energetic plasma ions and can activate reactive gas and film atoms. Now we have developed a GIS system. The GIS and the plasma ion-assisted deposition technology are investigated to achieve a high-quality optical coating. The GIS is a high power and high current source with a power of I kW ~ 7.5 kW, a current of 10 A ~ 70 A and an ion density of 200μA/cm2 ~ 500μA/cm2. Because of the special magnetic structure, the plasma-ion extraction efficiency has been improved to obtain a maximum ion density of 500μA/cm2 in the medium power (~ 4 kW) level. The GIS applied is of a special cathode structure, so that the GIS operation can be maintained under a rather low power and the lifetime of cathode will be extended. The GIS has been installed in the LPSX-1200 type box coating system. The coated TiO2, SiO2 films such as antireflective films with the system have the same performance reported by Leybold Co, 1992, along with a controllable refractive index and film structure.

  9. Mass and energy analysis of the ions in a plasma flood system

    Energy Technology Data Exchange (ETDEWEB)

    Wooding, A.C. [Institute of Materials Research, University of Salford, Salford M54WT (United Kingdom); Armour, D.G. [Institute of Materials Research, University of Salford, Salford M54WT (United Kingdom); Berg, J.A. van den [Institute of Materials Research, University of Salford, Salford M54WT (United Kingdom)]. E-mail: j.a.vandenberg@salford.ac.uk; Holmes, A.J.T. [Marcham Scientific, Hungerford, Berks RG17 0LH (United Kingdom); Burgess, C. [Applied Materials UK Ltd., Foundry Lane, Horsham, West Sussex RH13 5PX (United Kingdom); Goldberg, R.D. [Applied Materials UK Ltd., Foundry Lane, Horsham, West Sussex RH13 5PX (United Kingdom)

    2005-08-01

    Plasma flood systems, capable of providing a copious supply of electrons are used in ion implanters to control wafer charging and provide effective space charge neutralisation of the ion beam in the post-analysis/post-deceleration section of the beamline. Under appropriate conditions the plasma from the flood system interacts with the ion beam and this bridging leads to an enhanced beam transport efficiency in the final critical stage of the beamline. The effectiveness of this process depends on the properties of the plasma emanating from the system. In this study, a plasma analyser comprising a double hemi-spherical electrostatic energy analyser and a quadrupole mass spectrometer, was used to measure the energy distributions of all the ion species leaving a magnetically confined argon plasma, generated in the discharge chamber of a conventional flood neutraliser. The energy distributions extended to surprisingly high energies and the peak structures depended strongly on discharge voltage, discharge current and gas pressure. The nature of these dependencies was complex with both the pressure and arc current affecting the way in which the ion energy distributions depended on arc voltage. In all cases, multiply charged ions played a significant role in determining the nature of the ion energy distributions.

  10. SURFACE MODIFICATION OF TITANIUM FILMS WITH SODIUM ION IMPLANTATION: SURFACE PROPERTIES AND PROTEIN ADSORPTION

    Institute of Scientific and Technical Information of China (English)

    K. Y. Cai

    2007-01-01

    Sodium implanted titanium films with different ion doses were characterized to correlate their ion implantation parameters. Native titanium films and ion implanted titanium films were characterized with combined techniques of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and light microscopy (LM). The surface presented increased sodium concentration on treated titanium films with ion dose increasing, except for the group with the highest ion dose of 4× 1017 ions/cm2. XPS depth profiling displayed that sodium entered titanium film around 25-50 nm depth depending on its implantation ion dose. AFM characterization showed that sodium ion implantation treatment changed the surface morphology from a relatively smooth titanium film to rough surfaces corresponding to different implantation doses.After sodium implantation, implanted titanium films presented big particles with island structure morphology. The surface morphology and particle growth displayed the corresponding trend.Fibrinogen adsorption on these titanium films was performed to correlate with the surface properties of treated titanium films. The results show that protein adsorption on ion-implanted samples with dose of 2 × 1017 and 4 × 1017 are statistically higher (p < 0. 01) than samples treated with dose of 5×1016 and 1 ×1017, as well as the control samples.

  11. Nanometer structure and conductor mechanism of polymer modified by metal ion implantation

    Institute of Scientific and Technical Information of China (English)

    吴瑜光; 张通和; 张燕文; 张荟星; 张孝吉; 周固

    2001-01-01

    Polyethylene terephthalate (PET) has been modified by Ag, Ti, Cu and Si ion implanta-tion with a dose ranging from 1 × l016 to 2 x 1017 ions/cm2 using a metal vapor vacuum arc (MEVVA)source. The electrical properties of PET have been improved by metal ion implantation. The resistivityof implanted PET decreased obviously with an increase in ion dose. The results show that the conduc-tive behavior of a metal ion implanted sample is different from Si-implantation samples. In order to un-derstant the mechanism of electrical conduction, the structures of implanted layer were observed in de-tail by XRD and TEM. The nano carbon particles were dispersed in implanted PET. The nano metallicparticles were built up in metallic ion implanted layers with dose range from 1 × 1016 to 1 x 1017 ions/cm2. The nanometer metal net structure was formed in implanted layer when a dose of 2 x 1017ions/cm2 is reached. Anomalous fractal growths were observed. These surface structure changes revealedconducting mechanism evolution, lt is believed that the change would result in an improvement of theconductive properties. The conducting mechanism will be changed with increasing metal ion dose.

  12. Influence of Low-Energy Ion Irradiation on Plasma MembranePermeability of Cells

    Institute of Scientific and Technical Information of China (English)

    ZHANG Dong-Mei; CUI Fu-Zhai; SUN Su-Qin; LIN You-Bo; TIAN Min-Bo; CHEN Guo-Qiang

    2000-01-01

    Effect of low-energy ion irradiation on plasma membrane permeability has been investigated by using electron spin resonance (ESR) spectroscopy of spin probe technique. The investigated system is plumule cells of wheat (Triticum aestivum L.) seeds implanted by 30keV N+ ions. ESR spectra indicated that plasmalemma permeability is sensitive to low-energyion irradiation. Ion irradiations with increasing fluences up to semi-lethal dose lead to gradual increase in plasmalemma permeability of the plumule cells. The possible factors relevant to the changes in membrane permeability are discussed in relation to the changes in the physical state and chemical nature of membranes.

  13. Magnetic plasma confinement for laser ion source.

    Science.gov (United States)

    Okamura, M; Adeyemi, A; Kanesue, T; Tamura, J; Kondo, K; Dabrowski, R

    2010-02-01

    A laser ion source (LIS) can easily provide a high current beam. However, it has been difficult to obtain a longer beam pulse while keeping a high current. On occasion, longer beam pulses are required by certain applications. For example, more than 10 micros of beam pulse is required for injecting highly charged beams to a large sized synchrotron. To extend beam pulse width, a solenoid field was applied at the drift space of the LIS at Brookhaven National Laboratory. The solenoid field suppressed the diverging angle of the expanding plasma and the beam pulse was widened. Also, it was observed that the plasma state was conserved after passing through a few hundred gauss of the 480 mm length solenoid field.

  14. Acid etching and plasma sterilization fail to improve osseointegration of grit blasted titanium implants.

    Science.gov (United States)

    Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation.The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy implants were inserted press fit in each proximal tibia. In the first study grit blasted implants were compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri-implant tissue density) and mechanical push-out testing after four weeks observation time.Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner.

  15. Research on Surface Modification of 96 Al2O3 by Ni Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    WANG Xiao-hong; SUN Zhi; ZHU Xin; WANG Zhen-zhong

    2006-01-01

    A matrix of 96 Al2O3 ceramics was implanted with Ni ion of different dosages and energies using a MEVVA implanter. Then metallic structures of copper were made on the implanted ceramics, by using selective electroless copper plating. In addition, the characteristics and microstructure of the implanted layer were studied by using the SEM, RBS and XPS. The results show that: 1) the implanted Ni exits as Ni0 , Ni2+, and Ni3+ in the surface of Al2O3 and metal Ni particles precipitate on ceramics during implantation; 2) the concentration of Ni submits to the Gauss distribution along the direction of implantation on the surface of Al2O3 and high Ni concentration on the surface can be obtained if the Ni is implanted with low energy and a high dosage and 3) Ni ion implantation can activate the surface of Al2O3 and induce electroless copper plating on the ceramics.

  16. Selection of RIB targets using ion implantation at the Holifield Radioactive Ion Beam Facility

    Science.gov (United States)

    Alton, G. D.; Dellwo, J.

    1996-02-01

    Among several major challenges posed by generating and accelerating adequate intensities of RIBs, selection of the most appropriate target material is perhaps the most difficult because of the requisite fast and selective thermal release of minute amounts of the short-lived product atoms from the ISOL target in the presence of bulk amounts of target material. Experimental studies are under way at the Oak Ridge National Laboratory (ORNL) which are designed to measure the time evolution of implanted elements diffused from refractory target materials which are candidates for forming radioactive ion beams (RIBs) at the Holifield Radioactive Ion Beam Facility (HRIBF). The diffusion coefficients are derived by comparing experimental data with numerical solutions to a one-dimensional form of Fick's second equation for ion implanted distributions. In this report, we describe the experimental arrangement, experimental procedures, and provide time release data and diffusion coefficients for releasing ion implanted 37Cl from Zr 5Si 3 and 75As, 79Br, and 78Se from Zr 5Ge 3 and estimates of the diffusion coefficients for 35Cl, 63Cu, 65Cu, 69Ga, and 71Ga diffused from BN; 35Cl, 63Cu, 65Cu, 69Ga, 75As, and 78Se diffused from C; 35Cl, 68Cu, 69Ga, 75As, and 78Se diffused from Ta.

  17. Comprehensive modeling of ion-implant amorphization in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Mok, K.R.C. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain) and Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117576 (Singapore)]. E-mail: g0202446@nus.edu.sg; Jaraiz, M. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Martin-Bragado, I. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Synopsys, Karl-Hammerschmidt Strasse 34, D-85609 Aschheim/Dornach (Germany); Rubio, J.E. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Castrillo, P. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Pinacho, R. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Srinivasan, M.P. [Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117576 (Singapore); Benistant, F. [Chartered Semiconductor Manufacturing. 60 Woodlands Industrial Park D, Street 2, Singapore 738406 (Singapore)

    2005-12-05

    A physically based model has been developed to simulate the ion-implant induced damage accumulation up to amorphization in silicon. Based on damage structures known as amorphous pockets (AP), which are three-dimensional, irregularly shaped agglomerates of interstitials (I) and vacancies (V) surrounded by crystalline silicon, the model is able to reproduce a wide range of experimental observations of damage accumulation and amorphization with interdependent implantation parameters. Instead of recrystallizing the I's and V's instantaneously, the recrystallization rate of an AP containing nI and mV is a function of its effective size, defined as min(n, m), irrespective of its internal spatial configuration. The parameters used in the model were calibrated using the experimental silicon amorphous-crystalline transition temperature as a function of dose rate for C, Si, and Ge. The model is able to show the superlinear damage build-up with dose, the extent of amorphous layer and the superadditivity effect of polyatomic ions.

  18. Ion-implantation and analysis for doped silicon slot waveguides

    Directory of Open Access Journals (Sweden)

    McCallum J. C.

    2012-10-01

    Full Text Available We have utilised ion implantation to fabricate silicon nanocrystal sensitised erbium-doped slot waveguide structures in a Si/SiO2/Si layered configuration and photoluminescence (PL and Rutherford backscattering spectrometry (RBS to analyse these structures. Slot waveguide structures in which light is confined to a nanometre-scale low-index region between two high-index regions potentially offer significant advantages for realisation of electrically-pumped Si devices with optical gain and possibly quantum optical devices. We are currently investigating an alternative pathway in which high quality thermal oxides are grown on silicon and ion implantation is used to introduce the Er and Si-ncs into the SiO2 layer. This approach provides considerable control over the Er and Si-nc concentrations and depth profiles which is important for exploring the available parameter space and developing optimised structures. RBS is well-suited to compositional analysis of these layered structures. To improve the depth sensitivity we have used a 1 MeV α beam and results indicate that a layered silicon-Er:SiO2/silicon structure has been fabricated as desired. In this paper structural results will be compared to Er photoluminescence profiles for samples processed under a range of conditions.

  19. Ni ion release, osteoblast-material interactions, and hemocompatibility of hafnium-implanted NiTi alloy.

    Science.gov (United States)

    Zhao, Tingting; Li, Yan; Zhao, Xinqing; Chen, Hong; Zhang, Tao

    2012-04-01

    Hafnium ion implantation was applied to NiTi alloy to suppress Ni ion release and enhance osteoblast-material interactions and hemocompatibility. The auger electron spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscope results showed that a composite TiO(2)/HfO(2) nanofilm with increased surface roughness was formed on the surface of NiTi, and Ni concentration was reduced in the superficial surface layer. Potentiodynamic polarization tests displayed that 4 mA NiTi sample possessed the highest E(br) - E(corr), 470 mV higher than that of untreated NiTi, suggesting a significant improvement on pitting corrosion resistance. Inductively coupled plasma mass spectrometry tests during 60 days immersion demonstrated that Ni ion release rate was remarkably decreased, for example, a reduction of 67% in the first day. The water contact angle increased and surface energy decreased after Hf implantation. Cell culture and methyl-thiazol-tetrazolium indicated that Hf-implanted NiTi expressed enhanced osteoblasts adhesion and proliferation, especially after 7 days culture. Hf implantation decreased fibrinogen adsorption, but had almost no effect on albumin adsorption. Platelets adhesion and activation were suppressed significantly (97% for 4 mA NiTi) and hemolysis rate was decreased by at least 57% after Hf implantation. Modified surface composition and morphology and decreased surface energy should be responsible for the improvement of cytocompatibility and hemocompatibility. Copyright © 2011 Wiley Periodicals, Inc.

  20. Heavy ion time-of-flight ERDA of high dose metal implanted germanium

    Energy Technology Data Exchange (ETDEWEB)

    Dytlewski, N.; Evans, P.J.; Noorman, J.T. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Wielunski, L.S. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), Lindfield, NSW (Australia). Div. of Applied Physics; Bunder, J. [New South Wales Univ., Wollongong, NSW (Australia). Wollongong Univ. Coll

    1996-12-31

    With the thick Ge substrates used in ion implantation, RBS can have difficulty in resolving the mass-depth ambiguities when analysing materials composed of mixtures of elements with nearly equal masses. Additional, and complimentary techniques are thus required. This paper reports the use of heavy ion time-of-flight elastic recoil detection analysis (ToF- ERDA), and conventional RBS in the analysis of Ge(100) implanted with high dose Ti and Cu ions from a MEWA ion source . Heavy ion ToF ERDA has been used to resolve, and profile the implanted transition metal species, and also to study any oxygen incorporation into the sample resulting from the implantation, or subsequential reactions with air or moisture. This work is part of a study on high dose metal ion implantation of medium atomic weight semiconductor materials. 13 refs., 6 figs.

  1. Peripheral nerve regeneration through a silicone chamber implanted with negative carbon ions: Possibility to clinical application

    Science.gov (United States)

    Ikeguchi, Ryosuke; Kakinoki, Ryosuke; Tsuji, Hiroshi; Yasuda, Tadashi; Matsuda, Shuichi

    2014-08-01

    We investigated whether a tube with its inner surface implanted with negative-charged carbon ions (C- ions) would enable axons to extend over a distance greater than 10 mm. The tube was found to support nerves regenerating across a 15-mm-long inter-stump gap. We also investigated whether a C- ion-implanted tube pretreated with basic fibroblast growth factor (bFGF) promotes peripheral nerve regeneration. The C- ion implanted tube accelerated nerve regeneration, and this effect was enhanced by bFGF. Silicone treated with C- ions showed increased hydrophilic properties and cellular affinity, and axon regeneration was promoted with this increased biocompatibility.

  2. Improve the corrosion and cytotoxic behavior of NiTi implants with use of the ion beam technologies

    Energy Technology Data Exchange (ETDEWEB)

    Meisner, L. L., E-mail: llm@isps.tsc.ru; Meisner, S. N. [Institute of Strength Physics and Materials Science SB RAS, 2/4 Akademichesky Ave., Tomsk, 634021 (Russian Federation); National Research Tomsk State University, 36, Lenina Avenue, Tomsk, 634050 (Russian Federation); Matveeva, V. A.; Matveev, A. L. [Institute of Chemical Biology and Fundamental Medicine, Siberian Branch,Russian Academy of Sciences, Novosibirsk, 630090 (Russian Federation)

    2015-11-17

    The corrosion resistance behavior and cytotoxicity of binary NiTi-base alloy specimens subjected to surface modification by silicon ion beams and the proliferative ability of mesenchymal stem cells (MSC) of rat marrow on an ion-implanted surface of the alloy have been studied. The silicon ion beam processing of specimen surfaces is shown to bring about a nearly two-fold improvement in the corrosion resistance of the material to attack by acqueous solutions of NaCl and human plasma and a drastic decrease in the nickel concentration after immersion of the specimens into the solutions for ∼3400 and ∼6000 h, respectively. It is found that MSC proliferation strongly depends on the surface structure, roughness and chemical condition of NiTi implants.

  3. Ion acoustic shocks in magneto rotating Lorentzian plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, S.; Akhtar, N. [Theoretical Physics Division, PINSTECH, NILORE, Islamabad 44000 (Pakistan); DPAM, PIEAS, NILORE, Islamabad 44000 (Pakistan); Hasnain, H. [Theoretical Physics Division, PINSTECH, NILORE, Islamabad 44000 (Pakistan)

    2014-12-15

    Ion acoustic shock structures in magnetized homogeneous dissipative Lorentzian plasma under the effects of Coriolis force are investigated. The dissipation in the plasma system is introduced via dynamic viscosity of inertial ions. The electrons are following the kappa distribution function. Korteweg-de Vries Burger (KdVB) equation is derived by using reductive perturbation technique. It is shown that spectral index, magnetic field, kinematic viscosity of ions, rotational frequency, and effective frequency have significant impact on the propagation characteristic of ion acoustic shocks in such plasma system. The numerical solution of KdVB equation is also discussed and transition from oscillatory profile to monotonic shock for different plasma parameters is investigated.

  4. Ion Acoustic Waves in the Presence of Electron Plasma Waves

    DEFF Research Database (Denmark)

    Michelsen, Poul; Pécseli, Hans; Juul Rasmussen, Jens

    1977-01-01

    Long-wavelength ion acoustic waves in the presence of propagating short-wavelength electron plasma waves are examined. The influence of the high frequency oscillations is to decrease the phase velocity and the damping distance of the ion wave.......Long-wavelength ion acoustic waves in the presence of propagating short-wavelength electron plasma waves are examined. The influence of the high frequency oscillations is to decrease the phase velocity and the damping distance of the ion wave....

  5. Effect of disorder and defects in ion-implanted semiconductors electrical and physiochemical characterization

    CERN Document Server

    Willardson, Robert K; Christofides, Constantinos; Ghibaudo, Gerard

    2014-01-01

    Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing.Electrical and Physicochemical Characterization focuses on the physics of the annealing kine

  6. Metal-ion release from titanium and TiN coated implants in rat bone

    Energy Technology Data Exchange (ETDEWEB)

    Ferrari, F. (Dipt. di Meccanica Strutturale, Univ. degli Studi di Trento (Italy)); Miotello, A. (Dipt. di Fisica, Univ. degli Studi di Trento (Italy)); Pavloski, L. (CSM, Trento (Italy)); Galvanetto, E. (Dipt. di Meccanica Strutturale, Univ. degli Studi di Trento (Italy)); Moschini, G. (INFN-Lab. Nazionali di Legnaro, Padova (Italy)); Galassini, S. (INFN-Lab. Nazionali di Legnaro, Padova (Italy)); Passi, P. (Dental School, Univ. of Padua (Italy)); Bogdanovic, S. (R. Boskovic Inst., Zagreb (Croatia)); Fazinic, S. (R. Boskovic Inst., Zagreb (Croatia)); Jaksic, M. (R. Boskovic Inst., Zagreb (Croatia)); Valkovic, V. (R. Boskovic Inst., Zagreb (Croatia) IAEA Seibersdorf Labs., Wien (Austria))

    1993-06-01

    Titanium is a good material for dental and orthopaedic implants, but many authors reported that it releases ions into the surrounding tissues and into the serum. Titanium nitride has good mechanical properties and chemical inertless and may be employed as an implant coating material. In this experiment, pure titanium and SiO[sub 2] coated with TiN implants were inserted in the tibia of rats. After thirty days, the bones were taken and examined by a proton microprobe. TiN-coated implants showed a lower ion release into the bone compared with pure titanium. This suggests that TiN may be a good coating for endosseous implants. (orig.)

  7. A comparison of batch and single wafer high dose arsenic ion implantation techniques

    Energy Technology Data Exchange (ETDEWEB)

    Irwin, R.B.; Filo, A.J.; Kannan, V.C.; Feygenson, A.; Prematta, R.J.

    1989-04-01

    High dose, low energy (4x10/sup 15/ cm/sup -2/ at 15 keV) arsenic ion implantation into silicon was performed in batch and single wafer mode using medium and high current ion implanters. An investigation of implanted and annealed samples by Rutherford backscattering (RBS), transmission electron microscopy (TEM), thermal wave technique, and sheet resistance mapping showed little to no difference of arsenic profiles and residual damage between batch and single wafer implantation conditions when the sample temperature during implantation was kept below 120/sup 0/C. (orig.).

  8. A comparison of batch and single wafer high dose arsenic ion implantation techniques

    Science.gov (United States)

    Irwin, R. B.; Filo, A. J.; Kannan, V. C.; Feygenson, A.; Prematta, R. J.

    1989-04-01

    High dose, low energy (4×10 15 cm -2 at 15 keV) arsenic ion implantation into silicon was performed in batch and single wafer mode using medium and high current ion implanters. An investigation of implanted and annealed samples by Rutherford backscattering (RBS), transmission electron microscopy (TEM), thermal wave technique, and sheet resistance mapping showed little to no difference of arsenic profiles and residual damage between batch and single wafer implantation conditions when the sample temperature during implantation was kept below 120° C.

  9. Practical applications of ion beam and plasma processing for improving corrosion and wear protection

    CERN Document Server

    Klingenberg, M L; Wei, R; Demaret, J; Hirvonen, J

    2002-01-01

    A multi-year project for the US Army has been investigating the use of various ion beam and plasma-based surface treatments to improve the corrosion and wear properties of military hardware. These processes are intended to be complementary to, rather than competing with, other promising macro scale coating processes such high velocity oxy-fuel (HVOF) deposition, particularly in non-line-of- sight and flash chrome replacement applications. It is believed that these processes can improve the tribological and corrosion behavior of parts without significantly altering the dimensions of the part, thereby eliminating the need for further machining operations and reducing overall production costs. The ion beam processes chosen are relatively mature, low-cost processes that can be scaled-up. The key methods that have been considered under this program include nitrogen ion implantation into electroplated hard chrome, ion beam assisted chromium and chromium nitride coatings, and plasma-deposited diamond- like carbon an...

  10. Structure analysis of bimetallic Co–Au nanoparticles formed by sequential ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hua-jian [Hubei province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081 (China); Wang, Yu-hua, E-mail: wangyuhua@wust.edu.cn [Hubei province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081 (China); Zhang, Xiao-jian [Hubei province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081 (China); Song, Shu-peng [State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Chen, Hong; Zhang, Ke; Xiong, Zu-zhao; Ji, Ling-ling; Dai, Hou-mei; Wang, Deng-jing; Lu, Jian-duo; Wang, Ru-wu [Hubei province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081 (China); Zheng, Li-rong [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

    2016-08-15

    Highlights: • Co–Au alloy Metallic nanoparticles (MNPs) are formed by ion implantation in silica glass. • The ion ranges of Au ions implantation process have been displayed to show the ion distribution. • EXAFS, AFM and TEM have been used to study the local structural information of imetallic nanoparticles. • With the increase of Au ion implantation, the local environments of Co ions are changed enormously. Three oscillations are determined. - Abstract: Co–Au alloy Metallic nanoparticles (MNPs) are formed by sequential ion implantation of Co and Au into silica glass at room temperature. The ion ranges of Au ions implantation process have been displayed to show the ion distribution. We have used the atomic force microscopy (AFM) and transmission electron microscopy (TEM) to investigate the formation of bimetallic nanoparticles. The extended X-ray absorption fine structure (EXAFS) has been used to study the local structural information of bimetallic nanoparticles. With the increase of Au ion implantation, the local environments of Co ions are changed enormously. Hence, three oscillations, respectively, Co–O, Co–Co and Co–Au coordination are determined.

  11. Modification of anti-bacterial surface properties of textile polymers by vacuum arc ion source implantation

    Science.gov (United States)

    Nikolaev, A. G.; Yushkov, G. Yu.; Oks, E. M.; Oztarhan, A.; Akpek, A.; Hames-Kocabas, E.; Urkac, E. S.; Brown, I. G.

    2014-08-01

    Ion implantation provides an important technology for the modification of material surface properties. The vacuum arc ion source is a unique instrument for the generation of intense beams of metal ions as well as gaseous ions, including mixed metal-gas beams with controllable metal:gas ion ratio. Here we describe our exploratory work on the application of vacuum arc ion source-generated ion beams for ion implantation into polymer textile materials for modification of their biological cell compatibility surface properties. We have investigated two specific aspects of cell compatibility: (i) enhancement of the antibacterial characteristics (we chose to use Staphylococcus aureus bacteria) of ion implanted polymer textile fabric, and (ii) the "inverse" concern of enhancement of neural cell growth rate (we chose Rat B-35 neuroblastoma cells) on ion implanted polymer textile. The results of both investigations were positive, with implantation-generated antibacterial efficiency factor up to about 90%, fully comparable to alternative conventional (non-implantation) approaches and with some potentially important advantages over the conventional approach; and with enhancement of neural cell growth rate of up to a factor of 3.5 when grown on suitably implanted polymer textile material.

  12. Shunting arc plasma source for pure carbon ion beam.

    Science.gov (United States)

    Koguchi, H; Sakakita, H; Kiyama, S; Shimada, T; Sato, Y; Hirano, Y

    2012-02-01

    A plasma source is developed using a coaxial shunting arc plasma gun to extract a pure carbon ion beam. The pure carbon ion beam is a new type of deposition system for diamond and other carbon materials. Our plasma device generates pure carbon plasma from solid-state carbon material without using a hydrocarbon gas such as methane gas, and the plasma does not contain any hydrogen. The ion saturation current of the discharge measured by a double probe is about 0.2 mA∕mm(2) at the peak of the pulse.

  13. Shunting arc plasma source for pure carbon ion beama)

    Science.gov (United States)

    Koguchi, H.; Sakakita, H.; Kiyama, S.; Shimada, T.; Sato, Y.; Hirano, Y.

    2012-02-01

    A plasma source is developed using a coaxial shunting arc plasma gun to extract a pure carbon ion beam. The pure carbon ion beam is a new type of deposition system for diamond and other carbon materials. Our plasma device generates pure carbon plasma from solid-state carbon material without using a hydrocarbon gas such as methane gas, and the plasma does not contain any hydrogen. The ion saturation current of the discharge measured by a double probe is about 0.2 mA/mm2 at the peak of the pulse.

  14. Influence of irradiation spectrum and implanted ions on the amorphization of ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Zinkle, S.J.; Snead, L.L. [Oak Ridge National Laboratory, TN (United States)

    1996-04-01

    Amorphization cannot be tolerated in ceramics proposed for fusion energy applications due to the accompanying large volume change ({approx} 15% in SiC) and loss of strength. Ion beam irradiations at temperatures between 200 K and 450 K were used to examine the likelihood of amorphization in ceramics being considered for the structure (SiC) and numerous diagnostic and plasma heating systems (MgAl{sub 2}O{sub 4}, Al{sub 2}O{sub 3}, MgO, Si{sub 3}N{sub 4}) in fusion energy systems. The microstructures were examined following irradiation using cross-section transmission electron microscopy. The materials in this study included ceramics with predominantly covalent bonding (SiC, Si{sub 3}N{sub 4}) and predominantely ionic bonding (MgAl{sub 2}O{sub 4}, Al{sub 2}O{sub 3}, MgO). The samples were irradiated with a variety of ion beams (including some simultaneous dual ion beam irradiations) in order to investigate possible irradiation spectrum effects. The ion energies were >0.5 MeV in all cases, so that the displacement damage effects could be examined in regions well separated from the implanted ion region.

  15. Recrystallization and reactivation of dopant atoms in ion-implanted silicon nanowires.

    Science.gov (United States)

    Fukata, Naoki; Takiguchi, Ryo; Ishida, Shinya; Yokono, Shigeki; Hishita, Shunichi; Murakami, Kouichi

    2012-04-24

    Recrystallization of silicon nanowires (SiNWs) after ion implantation strongly depends on the ion doses and species. Full amorphization by high-dose implantation induces polycrystal structures in SiNWs even after high-temperature annealing, with this tendency more pronounced for heavy ions. Hot-implantation techniques dramatically suppress polycrystallization in SiNWs, resulting in reversion to the original single-crystal structures and consequently high reactivation rate of dopant atoms. In this study, the chemical bonding states and electrical activities of implanted boron and phosphorus atoms were evaluated by Raman scattering and electron spin resonance, demonstrating the formation of p- and n-type SiNWs.

  16. Effect of Sequential Ions Implantation on Structure of Cu, Ag Nanoparticles

    Institute of Scientific and Technical Information of China (English)

    XIAO Xiang-heng; LU Zhuo-yu; GUO Li-ping; REN Feng; CHEN Dong-liang; WU Zi-yu; JIA Quan-jie

    2007-01-01

    The preparation of metal nanoparticles composites by Cu, Ag ions sequential implantation is studied. The formation of Cu, Ag nanoparticles has been evidenced by grazing incidence X-ray diffraction, extended x-ray absorption fine structure and transmission electron microscopy. With the increase of Ag ion implantation dose, the size and density of Ag nanoparticles increase significantly.

  17. Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

    Directory of Open Access Journals (Sweden)

    Jeffrey C. McCallum

    2012-01-01

    Full Text Available Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics. Here, we provide an overview of international research work on single ion implantation and single ion detection for development of electronic devices for quantum computing. The scope of international research into single ion implantation is presented in the context of our own research in the Centre for Quantum Computation and Communication Technology in Australia. Various single ion detection schemes are presented, and limitations on dopant placement accuracy due to ion straggling are discussed together with pathways for scale-up to multiple quantum devices on the one chip. Possible future directions for ion implantation in quantum computing and communications are also discussed.

  18. Single ion impact detection and scanning probe aligned ion implantation for quantum bit formation

    Energy Technology Data Exchange (ETDEWEB)

    Weis, Christoph D.

    2011-10-04

    Quantum computing and quantum information processing is a promising path to replace classical information processing via conventional computers which are approaching fundamental physical limits. Instead of classical bits, quantum bits (qubits) are utilized for computing operations. Due to quantum mechanical phenomena such as superposition and entanglement, a completely different way of information processing is achieved, enabling enhanced performance for certain problem sets. Various proposals exist on how to realize a quantum bit. Among them are electron or nuclear spins of defect centers in solid state systems. Two such candidates with spin degree of freedom are single donor atoms in silicon and nitrogen vacancy (NV) defect centers in diamond. Both qubit candidates possess extraordinary qualities which makes them promising building blocks. Besides certain advantages, the qubits share the necessity to be placed precisely in their host materials and device structures. A commonly used method is to introduce the donor atoms into the substrate materials via ion implantation. For this, focused ion beam systems can be used, or collimation techniques as in this work. A broad ion beam hits the back of a scanning probe microscope (SPM) cantilever with incorporated apertures. The high resolution imaging capabilities of the SPM allows the non destructive location of device areas and the alignment of the cantilever and thus collimated ion beam spot to the desired implant locations. In this work, this technique is explored, applied and pushed forward to meet necessary precision requirements. The alignment of the ion beam to surface features, which are sensitive to ion impacts and thus act as detectors, is demonstrated. The technique is also used to create NV center arrays in diamond substrates. Further, single ion impacts into silicon device structures are detected which enables deliberate single ion doping.

  19. Nonlinear dust-ion-acoustic waves in a multi-ion plasma with trapped electrons

    Indian Academy of Sciences (India)

    S S Duha; B Shikha; A A Mamun

    2011-08-01

    A dusty multi-ion plasma system consisting of non-isothermal (trapped) electrons, Maxwellian (isothermal) light positive ions, warm heavy negative ions and extremely massive charge fluctuating stationary dust have been considered. The dust-ion-acoustic solitary and shock waves associated with negative ion dynamics, Maxwellian (isothermal) positive ions, trapped electrons and charge fluctuating stationary dust have been investigated by employing the reductive perturbation method. The basic features of such dust-ion-acoustic solitary and shock waves have been identified. The implications of our findings in space and laboratory dusty multi-ion plasmas are discussed.

  20. Synthesis and characterisation of ion-implanted epoxy composites for X-ray shielding

    Energy Technology Data Exchange (ETDEWEB)

    Noor Azman, N.Z. [Department of Imaging and Applied Physics, Faculty of Science and Engineering, Curtin University, GPO Box U1987, Perth, WA 6845 (Australia); School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Siddiqui, S.A. [Department of Imaging and Applied Physics, Faculty of Science and Engineering, Curtin University, GPO Box U1987, Perth, WA 6845 (Australia); Ionescu, M. [Australian Nuclear Science and Technology Organisation (ANSTO), Lucas Heights, NSW 2234 (Australia); Low, I.M., E-mail: j.low@curtin.edu.au [Department of Imaging and Applied Physics, Faculty of Science and Engineering, Curtin University, GPO Box U1987, Perth, WA 6845 (Australia)

    2012-09-15

    The epoxy samples were implanted with heavy ions such as tungsten (W), gold (Au) and lead (Pb) to investigate the attenuation characteristics of these composites. Near-surface composition depth profiling of ion-implanted epoxy systems was studied using Rutherford Backscattering Spectroscopy (RBS). The effect of implanted ions on the X-ray attenuation was studied with a general diagnostic X-ray machine with X-ray tube voltages from 40 to 100 kV at constant exposure 10 mAs. Results show that the threshold of implanted ions above which X-ray mass attenuation coefficient, {mu}{sub m} of the ion-implanted epoxy composite is distinguishably higher than the {mu}{sub m} of the pure epoxy sample is different for W, Au and Pb.

  1. Fabrication of thin diamond membranes by using hot implantation and ion-cut methods

    Science.gov (United States)

    Suk, Jaekwon; Kim, Hyeongkwon; Lim, Weon Cheol; Yune, Jiwon; Moon, Sung; Eliades, John A.; Kim, Joonkon; Lee, Jaeyong; Song, Jonghan

    2017-03-01

    A thin (2 μm) and relatively large area (3 × 3 mm2) diamond membrane was fabricated by cleaving a surface from a single crystal chemical vapor deposition (CVD) diamond wafer (3 × 3 mm2× 300 μm) using a hot implantation and ion-cut method. First, while maintaining the CVD diamond at 400 °C, a damage zone was created at a depth of 2.3 μm underneath the surface by implanting 4 MeV carbon ions into the diamond in order to promote membrane cleavage (hot implantation). According to TEM data, hot implantation reduces the thickness of the implantation damage zone by about a factor of 10 when compared to implanting carbon ions with the CVD diamond at room temperature (RT). In order to recover crystallinity, the implanted sample was then annealed at 850 °C. Next, 380 keV hydrogen ions were implanted into the sample to a depth of 2.3 μm below the surface with the CVD diamond at RT. After annealing at 850 °C, the CVD diamond surface layer was cleaved at the damage-zone due to internal pressure from H2 gas arising from the implanted hydrogen (ion-cut). A thin layer of graphite (˜300 nm) on the cleavage surface, arising from the implanted carbon, was removed by O2 annealing. This technique can potentially be used to produce much larger area membranes of variable thickness.

  2. Effect of calcium-ion implantation on the corrosion resistance and biocompatibility of titanium.

    Science.gov (United States)

    Krupa, D; Baszkiewicz, J; Kozubowski, J A; Barcz, A; Sobczak, J W; Bilińiski, A; Lewandowska-Szumieł, M D; Rajchel, B

    2001-08-01

    This work presents data on the structure and corrosion resistance of titanium after calcium-ion implantation with a dose of 10(17) Ca+/cm2. The ion energy was 25 keV. Transmission electron microscopy was used to investigate the microstructure of the implanted layer. The chemical composition of the surface layer was examined by XPS and SIMS. The corrosion resistance was examined by electrochemical methods in a simulated body fluid (SBF) at a temperature of 37 degrees C. Biocompatibility tests in vitro were performed in a culture of human derived bone cells (HDBC) in direct contact with the materials tested. Both, the viability of the cells determined by an XTT assay and activity of the cells evaluated by alkaline phosphatase activity measurements in contact with implanted and non-implanted titanium samples were detected. The morphology of the cells spread on the surface of the materials examined was also observed. The results confirmed the biocompatibility of both calcium-ion-implanted and non-implanted titanium under the conditions of the experiment. As shown by TEM results, the surface layer formed during calcium-ion implantation was amorphous. The results of electrochemical examinations indicate that calcium-ion implantation increases the corrosion resistance, but only under stationary conditions; during anodic polarization the calcium-ion-implanted samples undergo pitting corrosion. The breakdown potential is high (2.7-3 V).

  3. Comparison of Wear Resistance Mechanisms of Die Steel Implanted with C and mo Ions

    Science.gov (United States)

    Cheng, M. F.; Yang, J. H.; Luo, X. D.; Zhang, T. H.

    Mo and C ions extracted from a metal vapor vacuum arc ion source were implanted into the surface of die steel (H13) to compare the wear resistance mechanisms of the implanted samples, respectively. The concentration depth profiles of implanted ions were measured using Rutherford backscattering spectroscopy and calculated by a code called TRIDYN. The structures of the implanted steel were observed by X-ray photoelectron spectroscopy and grazing-angle X-ray diffraction, respectively. It was found that the conventional heat-treated H13 steel could not be further hardened by the subsequent implanted C ions, and the thickness of the implanted layer was not an important factor for the Mo and C ion implantation to improve the wear resistance of the H13 steel. Mo ion implantation could obviously improve the wear resistance of the steel at an extraction voltage of 48 kV and a dose of 5 × 1017cm-2 due to formation of a modification layer of little oxidation with Mo2C in the implanted surface.

  4. Near-surface recrystallization of the amorphous implanted layer of ion implanted 6H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Kuhudzai, R.J., E-mail: joeykuhu@yahoo.com [Physics Department, University of Pretoria, Pretoria (South Africa); Berg, N.G. van der; Malherbe, J.B.; Hlatshwayo, T.T.; Theron, C.C. [Physics Department, University of Pretoria, Pretoria (South Africa); Buys, A.V.; Botha, A.J. [Laboratory for Microscopy and Microanalysis, University of Pretoria (South Africa); Wendler, E.; Wesch, W. [Institut Für Festköperphysik, Friedrich-Schiller-Universität Jena, Jena (Germany)

    2014-08-01

    The recrystallization and subsequent crystal growth during annealing of amorphous surface layers on 6H-SiC produced by ion implantation is investigated. Amorphous surface layers were produced by ion implantation of 360 keV ions of iodine, silver, xenon, cesium and strontium into single crystalline 6H-silicon carbide samples. The ion fluence for all the implantations were in the order of 10{sup 16} cm{sup −2}. Vacuum annealing of the damaged silicon carbide samples was then performed. The microstructure of SiC surfaces before and after annealing was investigated using a high resolution field emission scanning electron microscope (SEM). SEM analysis was complimented by Atomic Force Microscopy (AFM). SEM images acquired by an in-lens detector using an accelerating voltage of 2 kV show nano-crystallites developed for all implanted samples after annealing. Larger and more faceted crystallites along with elongated thin crystallites were observed for iodine and xenon implanted 6H-SiC. Crystallites formed on surfaces implanted with strontium and cesium were smaller and less faceted. Strontium, silver and cesium implanted samples also exhibited more cavities on the surface. AFM was used to evaluate the effect of annealing on the surface roughness. For all the amorphous surfaces which were essentially featureless, the root mean square (rms) roughness was approximately 1 nm. The roughness increased to approximately 17 nm for the iodine implanted sample after annealing with the surface roughness below this value for all the other samples. AFM also showed that the largest crystals grew to heights of about 17, 20, 45, 50 and 65 nm for Sr, Cs, Ag, Xe and I implanted samples after annealing at 1200 °C for 5 h respectively. SEM images and AFM analysis suggest that iodine is more effective in promoting crystal growth during the annealing of bombardment-induced amorphous SiC layers than the rest of the ions we implanted. In samples of silicon carbide co-implanted with iodine and

  5. Quasi-periodic behavior of ion acoustic solitary waves in electron-ion quantum plasma

    Energy Technology Data Exchange (ETDEWEB)

    Sahu, Biswajit [Department of Mathematics, West Bengal State University Barasat, Kolkata-700126 (India); Poria, Swarup [Department of Applied Mathematics, University of Calcutta Kolkata-700009 (India); Narayan Ghosh, Uday [Department of Mathematics, Siksha Bhavana, Visva Bharati University Santiniketan (India); Roychoudhury, Rajkumar [Physics and Applied Mathematics Unit, Indian Statistical Institute Kolkata-700108 (India)

    2012-05-15

    The ion acoustic solitary waves are investigated in an unmagnetized electron-ion quantum plasmas. The one dimensional quantum hydrodynamic model is used to study small as well as arbitrary amplitude ion acoustic waves in quantum plasmas. It is shown that ion temperature plays a critical role in the dynamics of quantum electron ion plasma, especially for arbitrary amplitude nonlinear waves. In the small amplitude region Korteweg-de Vries equation describes the solitonic nature of the waves. However, for arbitrary amplitude waves, in the fully nonlinear regime, the system exhibits possible existence of quasi-periodic behavior for small values of ion temperature.

  6. Dependence of the depth distribution of implanted silver ions on the temperature of irradiated glass

    CERN Document Server

    Stepanov, A L

    2001-01-01

    The peculiarities of the glass ion implantation by the silver ions in dependence on the substrate temperature within the interval of 20-100 deg C are studied. Modeling the profiles of the implanted ions distribution in depth with an account of the thermostimulated increase in the admixture diffusion mobility is carried out. It is shown, that increase in the substrate temperature leads to the diffusion wash-out of the introduced admixture ions distribution. The analysis of the modeling results indicates the necessity of strict control of the substrate temperature by the dielectrics implantation for obtaining the conditions for the metal nanoparticles synthesis

  7. Dry Machining Tool Design via Chlorine Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    Tatsuhiko Aizawa; Atsushi Mitsuo; Shigeo Yamamoto; Shinji Muraishi; Taro Sumitomo

    2004-01-01

    Dry machining has become a key issue to significantly reduce the wastes of used lubricants and cleaning agents and to improve the environmental consciousness for medical and food applications of special tooling. Since the tools and metallic works are in direct contact in dry, severe adhesive wear and oxidation are thought to occur even at the presence of hard protective coatings. Self-lubrication mechanism with use of lubricous oxide films is found to be effective for dry machining. Through the chlorine ion implantation to tools, titanium base oxides are in-situ formed on the tool surface.This oxide deforms elasto-plastically so that both friction coefficient and wear volume are reduced even in the high-speed cutting.

  8. Focussed MeV ion beam implanted waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Von Bibra, M.L.; Roberts, A.; Nugent, K.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

  9. Dry Machining Tool Design via Chlorine Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    TatsuhikoAizawa; AtsushiMitsuo; ShigeoYamamoto; ShinjiMuraishi; TaroSumitomo

    2004-01-01

    Dry machining has become a key issue to significantly reduce the wastes of used lubricants and cleaning agents and to improve the environmental consciousness for medical and food applications of special tooling. Since the tools and metallic works are in direct contact in dry, severe adhesive wear and oxidation are thought to occur even at the presence of hard protective coatings. Self-lubrication mechanism with use of lubricous oxide films is found to be effective for dry machining. Through the chlorine ion implantation to tools, titanium base oxides are in-situ formed on the tool surface. This oxide deforms elasto-plastically so that both friction coefficient and wear volume are reduced even in the high-speed cutting.

  10. Attractive interaction between ions inside a quantum plasma structure

    CERN Document Server

    Dvornikov, Maxim

    2013-01-01

    We construct the model of a quantum spherically symmetric plasma structure based on radial oscillations of ions. We suppose that ions are involved in ion-acoustic waves. We find the exact solution of the Schrodinger equation for an ion moving in the self-consistent oscillatory potential of an ion-acoustic wave. The system of ions is secondly quantized and its ground state is constructed. Then we consider the interaction between ions by the exchange of an acoustic wave. It is shown that this interaction can be attractive. We describe the formation of pairs of ions inside a plasma structure and demonstrate that such a plasmoid can exist in dense astrophysical medium. The application of our results for terrestrial plasmas is also discussed.

  11. A simple ion implanter for material modifications in agriculture and gemmology

    Science.gov (United States)

    Singkarat, S.; Wijaikhum, A.; Suwannakachorn, D.; Tippawan, U.; Intarasiri, S.; Bootkul, D.; Phanchaisri, B.; Techarung, J.; Rhodes, M. W.; Suwankosum, R.; Rattanarin, S.; Yu, L. D.

    2015-12-01

    In our efforts in developing ion beam technology for novel applications in biology and gemmology, an economic simple compact ion implanter especially for the purpose was constructed. The designing of the machine was aimed at providing our users with a simple, economic, user friendly, convenient and easily operateable ion implanter for ion implantation of biological living materials and gemstones for biotechnological applications and modification of gemstones, which would eventually contribute to the national agriculture, biomedicine and gem-industry developments. The machine was in a vertical setup so that the samples could be placed horizontally and even without fixing; in a non-mass-analyzing ion implanter style using mixed molecular and atomic nitrogen (N) ions so that material modifications could be more effective; equipped with a focusing/defocusing lens and an X-Y beam scanner so that a broad beam could be possible; and also equipped with a relatively small target chamber so that living biological samples could survive from the vacuum period during ion implantation. To save equipment materials and costs, most of the components of the machine were taken from decommissioned ion beam facilities. The maximum accelerating voltage of the accelerator was 100 kV, ideally necessary for crop mutation induction and gem modification by ion beams from our experience. N-ion implantation of local rice seeds and cut gemstones was carried out. Various phenotype changes of grown rice from the ion-implanted seeds and improvements in gemmological quality of the ion-bombarded gemstones were observed. The success in development of such a low-cost and simple-structured ion implanter provides developing countries with a model of utilizing our limited resources to develop novel accelerator-based technologies and applications.

  12. A simple ion implanter for material modifications in agriculture and gemmology

    Energy Technology Data Exchange (ETDEWEB)

    Singkarat, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Wijaikhum, A. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Physics, University of York, Heslington, York YO10 5DD (United Kingdom); Suwannakachorn, D.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Intarasiri, S. [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Bootkul, D. [Department of General Science, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Phanchaisri, B.; Techarung, J. [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Rhodes, M.W.; Suwankosum, R.; Rattanarin, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2015-12-15

    In our efforts in developing ion beam technology for novel applications in biology and gemmology, an economic simple compact ion implanter especially for the purpose was constructed. The designing of the machine was aimed at providing our users with a simple, economic, user friendly, convenient and easily operateable ion implanter for ion implantation of biological living materials and gemstones for biotechnological applications and modification of gemstones, which would eventually contribute to the national agriculture, biomedicine and gem-industry developments. The machine was in a vertical setup so that the samples could be placed horizontally and even without fixing; in a non-mass-analyzing ion implanter style using mixed molecular and atomic nitrogen (N) ions so that material modifications could be more effective; equipped with a focusing/defocusing lens and an X–Y beam scanner so that a broad beam could be possible; and also equipped with a relatively small target chamber so that living biological samples could survive from the vacuum period during ion implantation. To save equipment materials and costs, most of the components of the machine were taken from decommissioned ion beam facilities. The maximum accelerating voltage of the accelerator was 100 kV, ideally necessary for crop mutation induction and gem modification by ion beams from our experience. N-ion implantation of local rice seeds and cut gemstones was carried out. Various phenotype changes of grown rice from the ion-implanted seeds and improvements in gemmological quality of the ion-bombarded gemstones were observed. The success in development of such a low-cost and simple-structured ion implanter provides developing countries with a model of utilizing our limited resources to develop novel accelerator-based technologies and applications.

  13. Target dependent femtosecond laser plasma implantation dynamics in enabling silica for high density erbium doping

    Science.gov (United States)

    Chandrappan, Jayakrishnan; Murray, Matthew; Kakkar, Tarun; Petrik, Peter; Agocs, Emil; Zolnai, Zsolt; Steenson, D. P.; Jha, Animesh; Jose, Gin

    2015-09-01

    Chemical dissimilarity of tellurium oxide with silica glass increases phase separation and crystallization tendency when mixed and melted for making a glass. We report a novel technique for incorporating an Er3+-doped tellurite glass composition into silica substrates through a femtosecond (fs) laser generated plasma assisted process. The engineered material consequently exhibits the spectroscopic properties of Er3+-ions, which are unachievable in pure silica and implies this as an ideal material for integrated photonics platforms. Formation of a well-defined metastable and homogeneous glass structure with Er3+-ions in a silica network, modified with tellurite has been characterized using high-resolution cross-sectional transmission electron microscopy (HRTEM). The chemical and structural analyses using HRTEM, Rutherford backscattering spectrometry (RBS) and laser excitation techniques, confirm that such fs-laser plasma implanted glasses may be engineered for significantly higher concentration of Er3+-ions without clustering, validated by the record high lifetime-density product 0.96 × 1019 s.cm-3. Characterization of planar optical layers and photoluminescence emission spectra were undertaken to determine their thickness, refractive indices and photoluminescence properties, as a function of Er3+ concentration via different target glasses. The increased Er3+ content in the target glass enhance the refractive index and photoluminescence intensity of the modified silica layer whilst the lifetime and thickness decrease.

  14. Staging and laser acceleration of ions in underdense plasma

    Science.gov (United States)

    Ting, Antonio; Hafizi, Bahman; Helle, Michael; Chen, Yu-Hsin; Gordon, Daniel; Kaganovich, Dmitri; Polyanskiy, Mikhail; Pogorelsky, Igor; Babzien, Markus; Miao, Chenlong; Dover, Nicholas; Najmudin, Zulfikar; Ettlinger, Oliver

    2017-03-01

    Accelerating ions from rest in a plasma requires extra considerations because of their heavy mass. Low phase velocity fields or quasi-electrostatic fields are often necessary, either by operating above or near the critical density or by applying other slow wave generating mechanisms. Solid targets have been a favorite and have generated many good results. High density gas targets have also been reported to produce energetic ions. It is interesting to consider acceleration of ions in laser-driven plasma configurations that will potentially allow continuous acceleration in multiple consecutive stages. The plasma will be derived from gaseous targets, producing plasma densities slightly below the critical plasma density (underdense) for the driving laser. Such a plasma is experimentally robust, being repeatable and relatively transparent to externally injected ions from a previous stage. When optimized, multiple stages of this underdense laser plasma acceleration mechanism can progressively accelerate the ions to a high final energy. For a light mass ion such as the proton, relativistic velocities could be reached, making it suitable for further acceleration by high phase velocity plasma accelerators to energies appropriate for High Energy Physics applications. Negatively charged ions such as antiprotons could be similarly accelerated in this multi-staged ion acceleration scheme.

  15. Cell adhesion of F{sup +} ion implantation of intraocular lens

    Energy Technology Data Exchange (ETDEWEB)

    Li, D.J. E-mail: dejunli@hotmail.com; Cui, F.Z.; Gu, H.Q

    1999-04-01

    The cell adhesion of ion implanted polymethylmethacrylate (PMMA) intraocular lens was studied using cultured cells in vitro. F{sup +} ion implantation was performed at the energies of 40, 60, 80, 100 keV with the fluences ranging from 5x10{sup 13} to 1x10{sup 15} ions/cm{sup 2} at room temperature. The cell adhesion tests gave interesting results that the number of the neutral granulocytes and the macrophages adhering on surface were reduced significantly after ion implantation. The optimal fluence was about 4x10{sup 14} ions/cm{sup 2}. The hydrophobicity imparted to the lens surface was also enhanced. The results of X-ray photoelectron spectroscopy analysis indicated that ion implantation resulted in the cleavage of some pendant groups, the oxidation of the surface, and the formation of some new chemical bonds, which was probably the main reason for the cell adhesion change.

  16. Transferring gfp gene with ion implantation and transient expression of gfp in liliaceous pollen cells

    Institute of Scientific and Technical Information of China (English)

    YUAN Shibin; CHEN Qizhong; WANG Yugang; ZHAO Weijiang; XU An; YANG Gen; WANG Wenxian; WU Lijun

    2004-01-01

    Liliaceous pollen cells were implanted by 4.0 MeV C2+ ion beam or by 25.0 keV N+ ion beam. Laser confocal scanning microscopy (LCSM) of the implanted intact samples showed that parts of the implanted pollen cells could be stained by propidium iodide (PI). This indicated that energetic ion beam could directly act on cells beneath the pollen coats and made channels for entry of the molecules from outside of the cells. LCSM analysis of green fluorescent protein (GFP) showed that energetic ion beam could mediate transient expression of gfp in treated pollen cells. Compared with 25.0 keV N+ ion beam, implantation of 4.0 MeV C2+ ion beam greatly improved gene transfer efficiency in pollen cells.

  17. Trapped ion mode in toroidally rotating plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Artun, M.; Tang, W.M.; Rewoldt, G.

    1995-04-01

    The influence of radially sheared toroidal flows on the Trapped Ion Mode (TIM) is investigated using a two-dimensional eigenmode code. These radially extended toroidal microinstabilities could significantly influence the interpretation of confinement scaling trends and associated fluctuation properties observed in recent tokamak experiments. In the present analysis, the electrostatic drift kinetic equation is obtained from the general nonlinear gyrokinetic equation in rotating plasmas. In the long perpendicular wavelength limit k{sub {tau}}{rho}{sub bi} {much_lt} 1, where {rho}{sub bi} is the average trapped-ion banana width, the resulting eigenmode equation becomes a coupled system of second order differential equations nmo for the poloidal harmonics. These equations are solved using finite element methods. Numerical results from the analysis of low and medium toroidal mode number instabilities are presented using representative TFTR L-mode input parameters. To illustrate the effects of mode coupling, a case is presented where the poloidal mode coupling is suppressed. The influence of toroidal rotation on a TFTR L-mode shot is also analyzed by including a beam species with considerable larger temperature. A discussion of the numerical results is presented.

  18. Ion flux and ion distribution function measurements in synchronously pulsed inductively coupled plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Brihoum, Melisa; Cunge, Gilles; Darnon, Maxime; Joubert, Olivier [Laboratoire des Technologies de la Microelectronique CNRS, Grenoble Cedex 9, Isere 38054 (France); Gahan, David [Impedans Ltd., Dublin 17 (Ireland); Braithwaite, Nicholas St. J. [Department of Physical Sciences, Open University, Walton Hall, Milton Keynes MK7 6AA (United Kingdom)

    2013-03-15

    Changes in the ion flux and the time-averaged ion distribution functions are reported for pulsed, inductively coupled RF plasmas (ICPs) operated over a range of duty cycles. For helium and argon plasmas, the ion flux increases rapidly after the start of the RF pulse and after about 50 {mu}s reaches the same steady state value as that in continuous ICPs. Therefore, when the plasma is pulsed at 1 kHz, the ion flux during the pulse has a value that is almost independent of the duty cycle. By contrast, in molecular electronegative chlorine/chlorosilane plasmas, the ion flux during the pulse reaches a steady state value that depends strongly on the duty cycle. This is because both the plasma chemistry and the electronegativity depend on the duty cycle. As a result, the ion flux is 15 times smaller in a pulsed 10% duty cycle plasma than in the continuous wave (CW) plasma. The consequence is that for a given synchronous RF biasing of a wafer-chuck, the ion energy is much higher in the pulsed plasma than it is in the CW plasma of chlorine/chlorosilane. Under these conditions, the wafer is bombarded by a low flux of very energetic ions, very much as it would in a low density, capacitively coupled plasma. Therefore, one can extend the operating range of ICPs through synchronous pulsing of the inductive excitation and capacitive chuck-bias, offering new means by which to control plasma etching.

  19. N and Cr ion implantation of natural ruby surfaces and their characterization

    Science.gov (United States)

    Rao, K. Sudheendra; Sahoo, Rakesh K.; Dash, Tapan; Magudapathy, P.; Panigrahi, B. K.; Nayak, B. B.; Mishra, B. K.

    2016-04-01

    Energetic ions of N and Cr were used to implant the surfaces of natural rubies (low aesthetic quality). Surface colours of the specimens were found to change after ion implantation. The samples without and with ion implantation were characterized by diffuse reflectance spectra in ultra violet and visible region (DRS-UV-Vis), field emission scanning electron microscopy (FESEM), selected area electron diffraction (SAED) and nano-indentation. While the Cr-ion implantation produced deep red surface colour (pigeon eye red) in polished raw sample (without heat treatment), the N-ion implantation produced a mixed tone of dark blue, greenish blue and violet surface colour in the heat treated sample. In the case of heat treated sample at 3 × 1017 N-ions/cm2 fluence, formation of colour centres (F+, F2, F2+ and F22+) by ion implantation process is attributed to explain the development of the modified surface colours. Certain degree of surface amorphization was observed to be associated with the above N-ion implantation.

  20. Investigation on the Tribology of Co Implanted Stainless Steel Using Metal Vapor Vacuum Arc Ion Source

    Institute of Scientific and Technical Information of China (English)

    Junxia GUO; Xun CAI; Qiulong CHEN

    2004-01-01

    AISI 304 stainless steel was ion implanted with Co, and the tribological property on the surface of the stainless steel was investigated. The Co ion implantation was carried out using a metal vapor vacuum arc (Mevva) broad-beam ion source with an extraction voltage of 40 kV, implantation doses of 3×1017/cm2 and 5×1017/cm2, and ion current densities of 13, 22 and 32 μA/cm2. The results showed that the near-surface hardness of Co-implanted stainless steel sample was increased by 50% or more, and it increased with increasing ion current density at first and then declined. The friction coefficient decreased from 0.74 to 0.20 after Co implantation. The wear rate after Co implantation reduced by 25% or more as compared to the unimplanted sample. The wear rate initially decreased with increasing ion current density and then an increase was observed. Within the range of experimental parameters, there exists a critical ion current density for the Co-implanted stainless steel, at which the wear rate decreased with increasing retained dose, going through a minimum and then increased. The critical ion current density in this paper is about 22 μA/cm2.

  1. Development of pulsed processes for the manufacture of solar cells. [Ion implantation and annealing process

    Energy Technology Data Exchange (ETDEWEB)

    Minnucci, J.A.

    1978-12-01

    This report describes the results of a 1-year program to develop the processes required for low-energy ion implantation for the automated production of silicon solar cells. The program included (1) demonstrating state-of-the-art ion implantation equipment and designing an automated ion implanter, (2) making efforts to improve the performance of ion-implanted solar cells to 16.5 percent AM1, (3) developing a model of the pulse annealing process used in solar cell production, and (4) preparing an economic analysis of the process costs of ion implantation. During the program, phosphorus ions at an energy of 10 keV and dose of 2 x 10/sup 15/ cm/sup -2/ were implanted in silicon solar cells to produce junctions, while boron ions at 25 keV and 5 x 10/sup 15/ cm/sup -2/ were implanted in the cells to produce effective back surface fields. An ion implantation facility with a beam current up to 4 mA and a production throughput of 300 wafers per hour was designed and installed. A design was prepared for a 100-mA, automated implanter with a production capacity of 100 MW/sub e/ per year. A Solar Array Manufacturing Industry Costing Standards (SAMICS) economic analysis of the automated process steps of ion implantation and pulse annealing indicated that junctions can be formed and annealed at a cost of less than 3 cents per watt. The efforts during this program represent a major advancement in developing the automated production of silicon solar cells with efficiencies greater than 16 percent AM1.

  2. Ion holes in the hydrodynamic regime in ultracold neutral plasmas

    Energy Technology Data Exchange (ETDEWEB)

    McQuillen, P.; Castro, J.; Strickler, T.; Bradshaw, S. J.; Killian, T. C. [Department of Physics and Astronomy, Rice University, Houston, Texas 77005 (United States)

    2013-04-15

    We describe the creation of localized density perturbations, or ion holes, in an ultracold neutral plasma in the hydrodynamic regime, and show that the holes propagate at the local ion acoustic wave speed. We also observe the process of hole splitting, which results from the formation of a density depletion initially at rest in the plasma. One-dimensional, two-fluid hydrodynamic simulations describe the results well. Measurements of the ion velocity distribution also show the effects of the ion hole and confirm the hydrodynamic conditions in the plasma.

  3. Advanced transmission electron microscopy studies in low-energy ion implanted Si Semiconductors; Junctions; Silicon

    CERN Document Server

    Wang, T S

    2002-01-01

    As the dimensions of semiconductor devices shrink down to 0.1 mu m and beyond, low energy ion implantation is required to introduce shallower junctions to match such small devices. In this work, transmission electron microscopy (TEM) is employed to analyse low energy implanted junctions with both structural and chemical analyses. High resolution transmission electron microscopy (HRTEM) has been employed to observe Si crystal damage and amorphization due to low energy B sup + /As sup + ion implantations, and also, defect formation/annihilation during rapid thermal annealing (RTA). The damage effects due to different implant temperatures between 300 deg C and -150 deg C are also discussed. Since knowledge of the distribution of low energy ion implanted dopants in Si is extremely important for semiconductor device processing, energy filtered transmission electron microscopy (EFTEM) has been employed to determine implanted B distributions in Si while Z-contrast imaging and X-ray analytical mapping techniques are ...

  4. Effect of disorder and defects in ion-implanted semiconductors optical and photothermal characterization

    CERN Document Server

    Willardson, R K; Christofides, Constantinos; Ghibaudo, Gerard

    1997-01-01

    Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Key Features * Provides basic knowledge of ion implantation-induced defects * Focuses on physical mechanisms of defect annealing * Utilizes electrical, physical, and optical characterization tools for processed semiconductors * Provides the basis for understanding the problems caused by the defects g...

  5. Ion sampling and transport in Inductively Coupled Plasma Mass Spectrometry

    Science.gov (United States)

    Farnsworth, Paul B.; Spencer, Ross L.

    2017-08-01

    Quantitative accuracy and high sensitivity in inductively coupled plasma mass spectrometry (ICP-MS) depend on consistent and efficient extraction and transport of analyte ions from an inductively coupled plasma to a mass analyzer, where they are sorted and detected. In this review we examine the fundamental physical processes that control ion sampling and transport in ICP-MS and compare the results of theory and computerized models with experimental efforts to characterize the flow of ions through plasma mass spectrometers' vacuum interfaces. We trace the flow of ions from their generation in the plasma, into the sampling cone, through the supersonic expansion in the first vacuum stage, through the skimmer, and into the ion optics that deliver the ions to the mass analyzer. At each stage we consider idealized behavior and departures from ideal behavior that affect the performance of ICP-MS as an analytical tool.

  6. Surface hardness changes induced by O-, Ca- or P-ion implantation into titanium.

    Science.gov (United States)

    Ikeyama; Nakao; Morikawa; Yokogawa; Wielunski; Clissold; Bell

    2000-12-30

    Titanium or titanium alloys are very attractive biomedical materials. Biocompatible elements of oxygen, calcium and phosphorus were implanted into titanium and changes of surface hardness were measured using an ultra micro indenter (UMIS-2000). A multiple load-partial unload procedure that can reveal a hardness versus depth profile was adopted. Depth profiles of concentration of implanted ions were obtained by SIMS measurement. For O and P implantation, it is observed that the hardness increases with the increases in the dose. O implantation produced the largest increase in hardness, up to 2.2 times higher than the unimplanted titanium. On the other hand, Ca implantation produced only a small increase in the hardness that was independent of the ion dose. The surface oxide layer of a Ca implanted titanium sample was much thicker than the unimplanted samples or those implanted with O and P ions. The depth of maximum hardness increases with increasing energy of implanted ions. The depths of the maximum hardness occur at indentation depths of one-third to one-eighth of the mean ranges of implanted ions.

  7. CoCrMo alloy for orthopedic implant application enhanced corrosion and tribocorrosion properties by nitrogen ion implantation

    Science.gov (United States)

    Guo, Zijian; Pang, Xiaolu; Yan, Yu; Gao, Kewei; Volinsky, Alex A.; Zhang, Tong-Yi

    2015-08-01

    CoCrMo alloy corrosion and tribocorrosion properties are crucial for orthopedic implant application. These properties have been enhanced by implanting nitrogen ions with 100 keV energy. The corrosion current density of the implanted alloy is reduced by an order of magnitude, compared with the original alloy without implantation. In the tribocorrosion tests, the potential of the implanted alloy remain almost unchanged at around 0.05 V versus Ag/AgCl, while the potential of the original alloy without implantation changes from -0.4 to -0.6 and then to about -0.5 V versus Ag/AgCl, showing typical tribocorrosion behavior. Tribocorrosion tests also show that the 4 × 1017 N+/cm2 implantation reduces the friction coefficient from 0.35 to 0.15. Various characterization results indicate that the implantation induces a novel composite microstructure of the nanocrystalline CrN embedded inside amorphous CoCrMo matrix in the implanted layer, which enhances hardness, corrosion and tribocorrosion properties.

  8. Optical and magnetic properties of nitrogen ion implanted MgO single crystal

    Institute of Scientific and Technical Information of China (English)

    Liu Chun-Ming; Gu Hai-Quan; Xiang Xia; Zhang Yan; Jiang Yong; Chen Meng; Zu Xiao-Tao

    2011-01-01

    The microstructure, optical property and magnetism of nitrogen ion implanted single MgO crystals are studied.A parallel investigation is also performed in an iron ion implanted single MgO sample as a reference. Large structural,optical and magnetic differences are obtained between the nitrogen and iron implanted samples. Room temperature ferromagnetism with a fairly large coercivity field of 300 Oe (1 Oe=79.5775 A/m), a remanence of 38% and a slightly changed optical absorption is obtained in the sample implanted using nitrogen with a dose of 1×1018 ions/cm2. Transition metal contamination and defects induced magnetism can be excluded when compared with those of the iron ion implanted sample, and the nitrogen doping is considered to be the main origin of ferromagnetism.

  9. Effect of phosphorus-ion implantation on the corrosion resistance and biocompatibility of titanium.

    Science.gov (United States)

    Krupa, D; Baszkiewicz, J; Kozubowski, J A; Barcz, A; Sobczak, J W; Biliński, A; Lewandowska-Szumieł, M; Rajchel, B

    2002-08-01

    This work presents data on the structure and corrosion resistance of titanium after phosphorus-ion implantation with a dose of 10(17)P/cm2. The ion energy was 25keV. Transmission electron microscopy was used to investigate the microstructure of the implanted layer. The chemical composition of the surface layer was examined by X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The corrosion resistance was examined by electrochemical methods in a simulated body fluid at a temperature of 37 C. Biocompatibility tests in vitro were performed in a culture of human derived bone cells in direct contact with the materials tested. Both, the viability of the cells determined by an XTT assay and activity of the cells evaluated by alkaline phosphatase activity measurements in contact with implanted and non-implanted titanium samples were detected. The morphology of the cells spread on the surface of the materials examined was also observed. The results confirmed the biocompatibility of both phosphorus-ion-implanted and non-implanted titanium under the conditions of the experiment. As shown by transmission electron microscope results, the surface layer formed during phosphorus-ion implantation was amorphous. The results of electrochemical examinations indicate that phosphorus-ion implantation increases the corrosion resistance after short-term as well as long-term exposures.

  10. MAGNESIUM PRECIPITATION AND DIFUSSION IN Mg+ ION IMPLANTED SILICON CARBIDE

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Weilin; Jung, Hee Joon; Kovarik, Libor; Wang, Zhaoying; Roosendaal, Timothy J.; Zhu, Zihua; Edwards, Danny J.; Hu, Shenyang Y.; Henager, Charles H.; Kurtz, Richard J.; Wang, Yongqiang

    2015-03-02

    As a candidate material for fusion reactor applications, silicon carbide (SiC) undergoes transmutation reactions under high-energy neutron irradiation with magnesium as the major metallic transmutant; the others include aluminum, beryllium and phosphorus in addition to helium and hydrogen gaseous species. Calculations by Sawan et al. predict that at a dose of ~100 dpa (displacements per atom), there is ~0.5 at.% Mg generated in SiC. The impact of these transmutants on SiC structural stability is currently unknown. This study uses ion implantation to introduce Mg into SiC. Multiaxial ion-channeling analysis of the as-produced damage state indicates a lower dechanneling yield observed along the <100> axis. The microstructure of the annealed sample was examined using high-resolution scanning transmission electron microscopy. The results show a high concentration of likely non-faulted tetrahedral voids and possible stacking fault tetrahedra near the damage peak. In addition to lattice distortion, dislocations and intrinsic and extrinsic stacking faults are also observed. Magnesium in 3C–SiC prefers to substitute for Si and it forms precipitates of cubic Mg2Si and tetragonal MgC2. The diffusion coefficient of Mg in 3C–SiC single crystal at 1573 K has been determined to be 3.8 ± 0.4E-19 m2/s.

  11. "Super-acceleration" of ions in a stationary plasma discharge

    Science.gov (United States)

    Bardakov, Vladimir; Ivanov, Sergey; Kazantsev, Alexander; Strokin, Nikolay; Stupin, Aleksey

    2016-10-01

    We report on the detection of the acceleration effect of the bulk of ions in a stationary plasma E × B discharge to energies exceeding considerably the value equivalent to the discharge voltage. We determined the conditions necessary for the generation of high-energy ions, and ascertained the influence exerted on the value of the ion energies by pressure (flow rate) and the kind of plasma-producing gas, and by the value of discharge current. The possible acceleration mechanism is suggested.

  12. Plasma opening switch studies of an applied Bz ion diode

    Science.gov (United States)

    Struckman, C. K.; Kusse, B. R.; Meyerhofer, D. D.; Rondeau, G.

    1989-05-01

    The light ion accelerator (1.5 MV, 4 ohms) at Cornell University is being used to study the characteristics of an applied Bz, or 'barrel', diode. The results of a series of experiments utilizing a plasma opening switch are reported. With a magnetically insulated ion diode load, the peak diode voltage increase from 1.5 to 1.8 MV and the ion power increased from 50 to 80 GW when a plasma opening switch was used.

  13. Solitons in a relativistic plasma with negative ions--

    Energy Technology Data Exchange (ETDEWEB)

    Das, G.C. (Dept. of Mathematics, Manipur Univ. Canchipur, Imphal-795003 (IN)); Karmakar, B. (Dept. of Mathematics, Dinabandhu College, Bongaon, Calcutta (IN)); Ibohanbi Singh, KH. (Dept. of Mathematics, Modern College, Imphal-795001 (IN))

    1990-02-01

    The interaction of the nonlinearity and the dispersiveness causing the solitary waves are studied in a relativistic plasma with negative ions through the derivation of a nonlinear partial differential equation known as the Korteweg-Devries (K-DV) equation. The negative ions play a salient feature on the existence and behavior of the solitons and could be of interest in laboratory plasmas. First, the observations are made in a nonisothermal plasma, and later the reduction to the nonisothermality of the plasma shows entirely different characteristics as compared to the solitons in the isothermal plasmas. A comparison with the various solutions has been emphasized.

  14. Kinetic study of ion-acoustic plasma vortices

    Energy Technology Data Exchange (ETDEWEB)

    Khan, S. A. [National Centre for Physics (NCP), Quaid-i-Azam University Campus, Islamabad 45320 (Pakistan); Aman-ur-Rehman, E-mail: amansadiq@gmail.com [Pakistan Institute of Engineering and Applied Sciences (PIEAS), P.O. Nilore, Islamabad 45650 (Pakistan); Mendonca, J. T. [IPFN, Instituto Superior Téchnico, Av. Rovisco Pais 1, 1049-001 Lisboa (Portugal)

    2014-09-15

    The kinetic theory of electron plasma waves with finite orbital angular momentum has recently been introduced by Mendonca. This model shows possibility of new kind of plasma waves and instabilities. We have extended the theory to ion-acoustic plasma vortices carrying orbital angular momentum. The dispersion equation is derived under paraxial approximation which exhibits a kind of linear vortices and their Landau damping. The numerical solutions are obtained and compared with analytical results which are in good agreement. The physical interpretation of the ion-acoustic plasma vortices and their Landau resonance conditions are given for typical case of Maxwellian plasmas.

  15. Ion irradiated graphite exposed to fusion-relevant deuterium plasma

    Energy Technology Data Exchange (ETDEWEB)

    Deslandes, Alec, E-mail: acd@ansto.gov.au [Institute of Materials Engineering, Australian Nuclear Science and Technology Organisation, Sydney (Australia); Institute for Environmental Research, Australian Nuclear Science and Technology Organisation, Sydney (Australia); Guenette, Mathew C. [Institute of Materials Engineering, Australian Nuclear Science and Technology Organisation, Sydney (Australia); Corr, Cormac S. [Plasma Research Laboratory, Research School of Physics and Engineering, The Australian National University, Canberra 0200 (Australia); Karatchevtseva, Inna [Institute of Materials Engineering, Australian Nuclear Science and Technology Organisation, Sydney (Australia); Thomsen, Lars [Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168 (Australia); Ionescu, Mihail [Institute for Environmental Research, Australian Nuclear Science and Technology Organisation, Sydney (Australia); Lumpkin, Gregory R.; Riley, Daniel P. [Institute of Materials Engineering, Australian Nuclear Science and Technology Organisation, Sydney (Australia)

    2014-12-01

    Graphite samples were irradiated with 5 MeV carbon ions to simulate the damage caused by collision cascades from neutron irradiation in a fusion environment. The ion irradiated graphite samples were then exposed to a deuterium plasma in the linear plasma device, MAGPIE, for a total ion fluence of ∼1 × 10{sup 24} ions m{sup −2}. Raman and near edge X-ray absorption fine structure (NEXAFS) spectroscopy were used to characterize modifications to the graphitic structure. Ion irradiation was observed to decrease the graphitic content and induce disorder in the graphite. Subsequent plasma exposure decreased the graphitic content further. Structural and surface chemistry changes were observed to be greatest for the sample irradiated with the greatest fluence of MeV ions. D retention was measured using elastic recoil detection analysis and showed that ion irradiation increased the amount of retained deuterium in graphite by a factor of four.

  16. Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

    Directory of Open Access Journals (Sweden)

    Jhovani Bornacelli

    2013-01-01

    Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

  17. Energetic-ion-driven global instabilities in stellarator/helical plasmas and comparison with tokamak plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Toi, K. [National Institute for Fusion Science, Toki, Japan; Ogawa, K. [Nagoya University, Japan; Isobe, M. [National Institute for Fusion Science, Toki, Japan; Osakabe, M. [National Institute for Fusion Science, Toki, Japan; Spong, Donald A [ORNL; Todo, Yasushi [National Institute for Fusion Science, Toki, Japan

    2011-01-01

    Comprehensive understanding of energetic-ion-driven global instabilities such as Alfven eigenmodes (AEs) and their impact on energetic ions and bulk plasma is crucially important for tokamak and stellarator/helical plasmas and in the future for deuterium-tritium (DT) burning plasma experiments. Various types of global modes and their associated enhanced energetic ion transport are commonly observed in toroidal plasmas. Toroidicity-induced AEs and ellipticity-induced AEs, whose gaps are generated through poloidal mode coupling, are observed in both tokamak and stellarator/helical plasmas. Global AEs and reversed shear AEs, where toroidal couplings are not as dominant were also observed in those plasmas. Helicity induced AEs that exist only in 3D plasmas are observed in the large helical device (LHD) and Wendelstein 7 Advanced Stellarator plasmas. In addition, the geodesic acoustic mode that comes from plasma compressibility is destabilized by energetic ions in both tokamak and LHD plasmas. Nonlinear interaction of these modes and their influence on the confinement of the bulk plasma as well as energetic ions are observed in both plasmas. In this paper, the similarities and differences in these instabilities and their consequences for tokamak and stellarator/helical plasmas are summarized through comparison with the data sets obtained in LHD. In particular, this paper focuses on the differences caused by the rotational transform profile and the 2D or 3D geometrical structure of the plasma equilibrium. Important issues left for future study are listed.

  18. Lattice location of platinum ions implanted into single crystal zirconia and their annealing behaviour

    Energy Technology Data Exchange (ETDEWEB)

    Cao, D.X. [Royal Melbourne Inst. of Tech., VIC (Australia); Sood, D.K. [Academia Sinica, Shanghai, SH (China). Shanghai Inst. of Nuclear Research; Brown, I.G. [Lawrence Berkeley Lab., CA (United States)

    1993-12-31

    Single crystal samples of (100) oriented cubic zirconia stabilised with 9.5 mol % yttria were implanted with platinum ions, using a metal vapour vacuum arc (MEVVA) high current ion implanter, to a nominal dose of 1x10{sup 17} ions/cm{sup 2}. The implanted samples were annealed isothermally in air ambient at 1200 deg C, from 1-24 hours. Rutherford Backscattering Spectrometry and Channeling (RBSC) of 2 MeV He ions are employed to determine depth distributions of ion damage, Pt ions and substitutionality of Pt ions before and after annealing. The damage behaviour, Pt migration and lattice location are discussed in terms of metastable phase formation and solid solubility considerations. 7 refs., 3 figs.

  19. FATIGUE LIFE PREDICTION OF COMMERCIALLY PURE TITANIUM AFTER NITROGEN ION IMPLANTATION

    Directory of Open Access Journals (Sweden)

    Nurdin Ali

    2013-06-01

    Full Text Available Prediction of fatigue life has become an interesting issue in biomaterial engineering and design for reliability and quality purposes, particularly for biometallic material with modified surfaces. Commercially pure titanium (Cp-Ti implanted with nitrogen ions is a potential metallic biomaterial of the future. The effect of nitrogen ion implantation on fatigue behavior of Cp-Ti was investigated by means of axial loading conditions. The as-received and nitrogen-ion implanted specimens with the energy of 100 keV and dose of 2 × 1017 ions cm-2, were used to determine the fatigue properties and to predict the life cycle of the specimens. The effect of nitrogen ion implantation indicated revealed improved the tensile strength due to the formation of nitride phases, TiN and Ti2N. The fatigue strength of Cp-Ti and Nii-Ti was 250 and 260 MPa, respectively. The analytical results show good agreement with experimental results.

  20. Improvement of polydimethylsiloxane guide tube for nerve regeneration treatment by carbon negative-ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Tsuji, H. E-mail: tsuji@kuee.kyoto-u.ac.jp; Izukawa, M.; Ikeguchi, R.; Kakinoki, R.; Sato, H.; Gotoh, Y.; Ishikawa, J

    2003-05-01

    Modification of polydimethylsiloxane (PDMS) rubber by negative ion-implantation was investigated for improvement of nerve regeneration property. The PDMS rubber surface was found to have more hydrophilic property after carbon negative-ion implantation than before. At the conditions of 10 keV and 3.0 x 10{sup 15} ions/cm{sup 2}, the contact angle decreased to 83 deg. from 100 deg. . The reason of the hydrophilic modification is due to hydrophilic functional groups such as hydroxyl formed at the surface by radiation effect of ion implantation. The in vivo regeneration test of rat sciatic nerve was performed by using 18-mm-long PDMS rubber tubes with inner diameter of 2 mm, the inner surface of which was implanted with carbon negative ions at the above conditions. At 24 weeks after the clinical surgery, the sciatic nerve was regenerated through the tube between the proximal and distal nerve stumps.

  1. Work function increase of Al-doped ZnO thin films by B+ ion implantation.

    Science.gov (United States)

    Hong, Sang-Jin; Heo, Gi-Seok; Park, Jong-Woon; Lee, In-Hwan; Choi, Bum-Ho; Lee, Jong-Ho; Park, Se-Yeon; Shin, Dong-Chan

    2007-11-01

    The work function of an Al-doped ZnO (AZO) thin film can be increased via B+ ion implantation from 3.92 eV up to 4.22 eV. The ion implantation has been carried out with the ion dose of 1 x 10(16) cm(-2) and ion energy of 5 keV. The resistance of the B+ implanted AZO films has been a bit raised, while their transmittance is slightly lowered, compared to those of un-implanted AZO films. These behaviors can be explained by the doping profile and the resultant band diagram. It is concluded that the coupling between the B+ ions and oxygen vacancies would be the main reason for an increase in the work function and a change in the other properties. We also address that the work function is more effectively alterable if the defect density of the top transparent conducting oxide layer can be controlled.

  2. Interferometric pump-probe characterization of the nonlocal response of optically transparent ion implanted polymers

    Science.gov (United States)

    Stefanov, Ivan L.; Hadjichristov, Georgi B.

    2012-03-01

    Optical interferometric technique is applied to characterize the nonlocal response of optically transparent ion implanted polymers. The thermal nonlinearity of the ion-modified material in the near-surface region is induced by continuous wave (cw) laser irradiation at a relatively low intensity. The interferometry approach is demonstrated for a subsurface layer of a thickness of about 100 nm formed in bulk polymethylmethacrylate (PMMA) by implantation with silicon ions at an energy of 50 keV and fluence in the range 1014-1017 cm-2. The laser-induced thermooptic effect in this layer is finely probed by interferometric imaging. The interference phase distribution in the plane of the ion implanted layer is indicative for the thermal nonlinearity of the near-surface region of ion implanted optically transparent polymeric materials.

  3. First-principles calculations on implanted TiO2 by 3d transition metal ions

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    3d transition metal (V, Cr and Fe) ions are implanted into TiO2 by the method of metal ion implantation. The electronic band structures of TiO2 films doped 3d transition metal ions have been analyzed by ab initio band calculations based on a self-consistent full-potential linearized augmented plane-wave method within the first-principle formalism. Influence of implantation on TiO2 films is examined by the method of UV-visible spectrometry. The results of experiment and calculation show that the optical band gap of TiO2 films is narrowed by ion implantation. The calculation shows that the 3d state of V, Cr and Fe ions plays a significant role in red shift of UV-Vis absorbance spectrum.

  4. Nanomechanical and Corrosion Properties of ZK60 Magnesium Alloy Improved by GD Ion Implantation

    Science.gov (United States)

    Tao, Xue Wei; Wang, Zhang Zhong; Zhang, Xiao Bo; Ba, Zhi Xin; Wang, Ya Mei

    2014-09-01

    Gadolinium (Gd) ion implantation with doses from 2.5 × 1016 to 1 × 1017 ions/cm2 into ZK60 magnesium alloy was carried out to improve its surface properties. X-ray photoelectron spectroscopy (XPS), nanoindenter, electrochemical workstation and scanning electron microscope (SEM) were applied to analyze the chemical composition, nanomechanical properties and corrosion characteristics of the implanted layer. The results indicate that Gd ion implantation produces a hybrid-structure protective layer composed of MgO, Gd2O3 and metallic Gd in ZK60 magnesium alloy. The surface hardness and modulus of the Gd implanted magnesium alloy are improved by about 300% and 100%, respectively with the dose of 1 × 1017 ions/cm2, while the slowest corrosion rate of the magnesium alloy in 3.5 wt.% NaCl solution is obtained with the dose of 5 × 1016 ions/cm2.

  5. Effects of nitrogen ion implantation on Ca2+ concentration and membrane potential of pollen cell

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The effects of low energy nitrogen ion implantation on Ca2+ concentration and membrane potential of lily (lilium davidii Duch) pollen cell have been studied. The results showed that the Ca2+ concentration was increased when pollen grain was implanted by nitrogen ion with energy 100keV and dose 1013 ions/cra2. However, the increase of Ca2+ concentration was partly inhibited by the addition of Ca2+channel inhibitor depending on dose. And nitrogen ion implantation caused depolarization of pollen cell membrane potential. In other words, membrane potential was increased,but the effect decreased by adding Ca2+ channel inhibitor.However, it was still significantly higher than the membrane potential of control cells. It was indicated that the depolarization of cell membrane potential opened the calcium channel on the membrane that caused the increasing of intraceilular calcium concentration. This might be an earlier step of the effect of low energy nitrogen ion implantation on pollen germination.

  6. Antibacterial Property of Martensitic Stainless Steel Generated by Cu Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    XU Bo-fan; NI Hong-wei; DAN Zhi-gang; XIONG Juan; XIONG Ping-yuan

    2004-01-01

    Copper ions were implanted into a AISI420 martensitic stainless steel (SS) by metal vapor vacuum arc (MEVVA) with a dose range 0.2 ×1017 ~5.0×1017 cm-2 at the energy of 100keV. The Cu-implanted stainless steel was treated by a special antibacterial treatment subsequently. The phase compositions in the implanted layer were studied by glancing X-ray diffraction (GXRD) and changes of bacterial appearance on the surface of Cu un-implanted SS and Cu-implanted SS with antibacterial treatment SS were observed by bio-TEM (transmission electron microscopy) separately. The results showed that a suitable amount of Cu-rich phase was dispersed in the implanted layer of Cu-implanted SS that was treated by special antibacterial treatment. So the Cu-implanted martensitic stainless steel with antibacterial treatment reveals excellent antibacterial property against both E. coli and S. aureus.

  7. Antibacterial Property of Martensitic Stainless Steel Generated by Cu Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    XUBo-fan; NIHong-wei; DANZhi-gang; XIONGJuan; XIONGPing-yuan

    2004-01-01

    Copper ions were implanted into a AISI420 martensitic stainless steel (SS) by metal vapor vacuum arc (MEVVA) with a dose range 0.2×1017-5.0×1017cm-2 at the energy of 100keV. The Cu-implanted stainless steel was treated by a special antibacterial treatment subsequently. The phase compositions in the implanted layer were studied by glancing X-ray diffraction (GXRD) and changes of bacterial appearance on the surface of Cu un-implanted SS and Cu-implanted SS with antibacterial treatment SS were observed by bio-TEM (transmission electron microscopy) separately. The results showed that a suitable amount of Cu-rich phase was dispersed in the implanted layer of Cu-implanted SS that was treated by special antibacterial treatment. So the Cu-implanted martensitic stainless steel with antibacterial treatment reveals excellent antibacterial property against both E. coli and S. aureus.

  8. Effects of post-deposition argon implantation on the memory properties of plasma-deposited silicon nitride films

    Science.gov (United States)

    Shams, Q. A.; Brown, W. D.

    1989-10-01

    Post-deposition ion implantation has been used to introduce argon into plasma-enhanced chemically vapor deposited silicon nitride films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the metal-silicon nitride-silicon oxide-silicon structure. Argon was implanted into the SiH4 -NH3 -N2 deposited films at energies ranging from 25 to 75 keV, current densities ranging from 0.1 to 75 μA/cm2 and fluences ranging from 1×1012 to 1×1016 ions/cm2. Physical properties of the films were studied by ellipsometry and infrared spectroscopy, while high frequency capacitance-voltage (C-V) curves were used to obtain programming, retention, and endurance characteristics.

  9. Effect of dual ion implantation of calcium and phosphorus on the properties of titanium.

    Science.gov (United States)

    Krupa, D; Baszkiewicz, J; Kozubowski, J A; Barcz, A; Sobczak, J W; Biliński, A; Lewandowska-Szumieł, M; Rajchel, B

    2005-06-01

    This study is concerned with the effect of dual implantation of calcium and phosphorus upon the structure, corrosion resistance and biocompatibility of titanium. The ions were implanted in sequence, first Ca and then P, both at a dose of 10(17) ions/cm2 at a beam energy of 25 keV. Transmission electron microscopy was used to investigate the microstructure of the implanted layer. The chemical composition of the implanted layer was examined by XPS and SIMS. The corrosion resistance was determined by electrochemical methods in a simulated body fluid (SBF) at a temperature of 37 degrees C. The biocompatibility tests were performed in vitro in a culture of human-derived bone cells (HDBC) in contact with the tested materials. The viability of the cells was determined by an XTT assay and their activity by the measurements of the alkaline phosphatase activity in contact with implanted and non-implanted titanium samples. The in vitro examinations confirmed that, under the conditions prevailing during the experiments, the biocompatibility of Ca + P ion-implanted titanium was satisfactory. TEM results show that the surface layer formed by the Ca + P implantation is amorphous. The corrosion resistance of titanium, examined by the electrochemical methods, appeared to be increased after the Ca + P ion implantation.

  10. Algorithm for statistical noise reduction in three-dimensional ion implant simulations

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Mangas, J.M. E-mail: jesman@ele.uva.es; Arias, J.; Jaraiz, M.; Bailon, L.; Barbolla, J

    2001-05-01

    As integrated circuit devices scale into the deep sub-micron regime, ion implantation will continue to be the primary means of introducing dopant atoms into silicon. Different types of impurity profiles such as ultra-shallow profiles and retrograde profiles are necessary for deep submicron devices in order to realize the desired device performance. A new algorithm to reduce the statistical noise in three-dimensional ion implant simulations both in the lateral and shallow/deep regions of the profile is presented. The computational effort in BCA Monte Carlo ion implant simulation is also reduced.

  11. Long-range effect of ion implantation of Raex and Hardox steels

    Science.gov (United States)

    Budzyński, P.; Kamiński, M.; Droździel, A.; Wiertel, M.

    2016-09-01

    Ion implantation involves introduction of ionized atoms of any element (nitrogen) to metals thanks to the high kinetic energy that they acquired in the electric field. The distribution of nitrogen ions implanted at E = 65 keV energy and D = 1.1017 N+ /cm2 fluence in the steel sample and vacancies produced by them was calculated using the SRIM program. This result was confirmed by RBS measurements. The initial maximum range of the implanted nitrogen ions is ∼⃒0.17 μm. This value is relatively small compared to the influence of nitriding on the thickness surface layer of modified steel piston rings. Measurements of the friction coefficient during the pin-on-disc tribological test were performed under dry friction conditions. The friction coefficient of the implanted sample increased to values characteristic of an unimplanted sample after ca. 1500 measurement cycles. The depth of wear trace is ca. 2.4 μm. This implies that the thickness of the layer modified by the implantation process is ∼⃒2.4 μm and exceeds the initial range of the implanted ions by an order of magnitude. This effect, referred to as a long-range implantation effect, is caused by migration of vacancies and nitrogen atoms into the sample. This phenomenon makes ion implantation a legitimate process of modification of the surface layer in order to enhance the tribological properties of critical components of internal combustion engines such as steel piston rings.

  12. Negative ion studies on the RF plasma device MAGPIE

    Science.gov (United States)

    Willett, Hannah; Santoso, Jesse; Corr, Cormac; Gibson, Kieran

    2016-10-01

    Neutral beam injection (NBI) systems provide both heating and current drive in tokamak fusion reactors. High energy (> 1 MeV) neutral beams are produced by neutralising accelerated ions, for which negative ions are used; the neutralisation cross section for positive ions becomes negligible at these energies. This requires very high throughput negative ion sources. Currently this is achieved using inductively coupled plasma sources, which incorporate caesium to improve the production rate. It has been proposed that helicon plasma sources could provide a more efficient, higher throughput method of producing negative ions for NBI, possibly even removing the need for caesium. We report on studies of the negative hydrogen ion population in the MAGPIE helicon device (Australian National University) under a variety of operating conditions. The probe-based laser photodetachment method and Langmuir probes are employed to estimate the negative hydrogen ion density throughout the device. Initial results support the viability of helicon-based negative ion sources.

  13. Relativistic electromagnetic waves in an electron-ion plasma

    Science.gov (United States)

    Chian, Abraham C.-L.; Kennel, Charles F.

    1987-01-01

    High power laser beams can drive plasma particles to relativistic energies. An accurate description of strong waves requires the inclusion of ion dynamics in the analysis. The equations governing the propagation of relativistic electromagnetic waves in a cold electron-ion plasma can be reduced to two equations expressing conservation of energy-momentum of the system. The two conservation constants are functions of the plasma stream velocity, the wave velocity, the wave amplitude, and the electron-ion mass ratio. The dynamic parameter, expressing electron-ion momentum conversation in the laboratory frame, can be regarded as an adjustable quantity, a suitable choice of which will yield self-consistent solutions when other plasma parameters were specified. Circularly polarized electromagnetic waves and electrostatic plasma waves are used as illustrations.

  14. Fast ions and momentum transport in JET tokamak plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Salmi, A.

    2012-07-01

    Fast ions are an inseparable part of fusion plasmas. They can be generated using electromagnetic waves or injected into plasmas as neutrals to heat the bulk plasma and to drive toroidal rotation and current. In future power plants fusion born fast ions deliver the main heating into the plasma. Understanding and controlling the fast ions is of crucial importance for the operation of a power plant. Furthermore, fast ions provide ways to probe the properties of the thermal plasma and get insight of its confinement properties. In this thesis, numerical code packages are used and developed to simulate JET experiments for a range of physics issues related to fast ions. Namely, the clamping fast ion distribution at high energies with RF heating, fast ion ripple torque generation and the toroidal momentum transport properties using NBI modulation technique are investigated. Through a comparison of numerical simulations and the JET experimental data it is shown that the finite Larmor radius effects in ion cyclotron resonance heating are important and that they can prevent fast ion tail formation beyond certain energy. The identified mechanism could be used for tailoring the fast ion distribution in future experiments. Secondly, ASCOT simulations of NBI ions in a ripple field showed that most of the reduction of the toroidal rotation that has been observed in the JET enhanced ripple experiments could be attributed to fast ion ripple torque. Finally, fast ion torque calculations together with momentum transport analysis have led to the conclusion that momentum transport in not purely diffusive but that a convective component, which increases monotonically in radius, exists in a wide range of JET plasmas. Using parameter scans, the convective transport has been shown to be insensitive to collisionality and q-profile but to increase strongly against density gradient. (orig.)

  15. Ion temperature evolution in an ultracold neutral plasma

    Energy Technology Data Exchange (ETDEWEB)

    McQuillen, P., E-mail: patrickmcquillen@rice.edu; Strickler, T.; Langin, T.; Killian, T. C. [Department of Physics and Astronomy, Rice University, Houston, Texas 77005 (United States)

    2015-03-15

    We study the long-time evolution of the ion temperature in an expanding ultracold neutral plasma using spatially resolved, laser-induced-fluorescence spectroscopy. Adiabatic cooling reduces the ion temperature by an order of magnitude during the plasma expansion, to temperatures as low as 0.2 K. Cooling is limited by heat exchange between ions and the much hotter electrons. We also present evidence for an additional heating mechanism and discuss possible sources. Data are described by a model of the plasma evolution, including the effects of ion-electron heat exchange. We show that for appropriate initial conditions, the degree of Coulomb coupling of ions in the plasma increases during expansion.

  16. Ion Temperature Evolution in an Ultracold Neutral Plasma

    CERN Document Server

    McQuillen, P; Langin, T; Killian, T C

    2015-01-01

    We study the long-time evolution of the ion temperature in an expanding ultracold neutral plasma using spatially resolved, laser-induced-fluorescence spectroscopy. Adiabatic cooling reduces the ion temperature by an order of magnitude during the plasma expansion, to temperatures as low as 0.2 K. Cooling is limited by heat exchange between ions and the much hotter electrons. We also present evidence for an additional heating mechanism and discuss possible sources. Data are described by a model of the plasma evolution, including the effects of ion-electron heat exchange. We show that for appropriate initial conditions, the degree of Coulomb coupling of ions in the plasma increases during expansion.

  17. Decrease of Staphylococcal adhesion on surgical stainless steel after Si ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Braceras, Iñigo, E-mail: inigo.braceras@tecnalia.com [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Pacha-Olivenza, Miguel A. [CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Universidad de Extremadura, Departamento de Física Aplicada, Facultad de Ciencias, Av. Elvas s/n, 06006 Badajoz (Spain); Calzado-Martín, Alicia [Hospital Universitario La Paz-IdiPAZ, Paseo de la Castellana 261, 28046 Madrid (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Multigner, Marta [Centro Nacional de Investigaciones Metalúrgicas, CENIM-CSIC, Avda Gregorio del Amo 8, 28040 Madrid (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Vera, Carolina [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Broncano, Luis Labajos-; Gallardo-Moreno, Amparo M. [Universidad de Extremadura, Departamento de Física Aplicada, Facultad de Ciencias, Av. Elvas s/n, 06006 Badajoz (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); González-Carrasco, José Luis [Centro Nacional de Investigaciones Metalúrgicas, CENIM-CSIC, Avda Gregorio del Amo 8, 28040 Madrid (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Vilaboa, Nuria [Hospital Universitario La Paz-IdiPAZ, Paseo de la Castellana 261, 28046 Madrid (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); and others

    2014-08-15

    Highlights: • Si ion implantation of AISI 316LVM medical grade alloy might reduce bacterial adhesion and colonization. • Si ion implantation does not impair the attachment, viability and matrix maturation of human mesenchymal stem cells. • Nano-topography and surface chemistry changes account for the Si ion implantation induced effects. - Abstract: 316LVM austenitic stainless steel is often the material of choice on temporal musculoskeletal implants and surgical tools as it combines good mechanical properties and acceptable corrosion resistance to the physiologic media, being additionally relatively inexpensive. This study has aimed at improving the resistance to bacterial colonization of this surgical stainless steel, without compromising its biocompatibility and resistance. To achieve this aim, the effect of Si ion implantation on 316LVM has been studied. First, the effect of the ion implantation parameters (50 keV; fluence: 2.5–5 × 10{sup 16} ions/cm{sup 2}; angle of incidence: 45–90°) has been assessed in terms of depth profiling of chemical composition by XPS and nano-topography evaluation by AFM. The in vitro biocompatibility of the alloy has been evaluated with human mesenchymal stem cells. Finally, bacterial adhesion of Staphylococcus epidermidis and Staphylococcus aureus on these surfaces has been assessed. Reduction of bacterial adhesion on Si implanted 316LVM is dependent on the implantation conditions as well as the features of the bacterial strains, offering a promising implantable biomaterial in terms of biocompatibility, mechanical properties and resistance to bacterial colonization. The effects of surface composition and nano-topography on bacterial adhesion, directly related to ion implantation conditions, are also discussed.

  18. Ion implantation effect on surface properties of quartz. [Ar/sup +/, Ne/sup +/, C/sup +/, N/sup +/ implantation

    Energy Technology Data Exchange (ETDEWEB)

    Shitova, Eh.V.; Genkina, N.A.; Zotova, T.M.; Nikolaeva, L.E.; Chigrinskij, Yu.I.; Treskin, S.A.

    Results of studying the effects of implantation of various ions on the surface structure and microhardness of amorphous quartz are presented. Implantation of Ar/sup +/, Ne/sup +/, C/sup +/, N/sup +/ ions is shown to result in the microhardness increase by a factor of 1.5-2. The subsequent annealing of the ion-implanted specimens increases the microhardness 1.5-2 times as much.

  19. Electrostatic solitary waves in dusty pair-ion plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Misra, A. P. [Department of Mathematics, Siksha Bhavana, Visva-Bharati University, Santiniketan-731 235, West Bengal (India); Adhikary, N. C. [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Vigyan Path, Paschim Boragaon, Garchuk, Guwahati-781035, Assam (India)

    2013-10-15

    The propagation of electrostatic waves in an unmagnetized collisionless pair-ion plasma with immobile positively charged dusts is studied for both large- and small-amplitude perturbations. Using a two-fluid model for pair-ions, it is shown that there appear two linear ion modes, namely the “fast” and “slow” waves in dusty pair-ion plasmas. The properties of these wave modes are studied with different mass (m) and temperature (T) ratios of negative to positive ions, as well as the effects of immobile charged dusts (δ). For large-amplitude waves, the pseudopotential approach is performed, whereas the standard reductive perturbation technique is used to study the small-amplitude Korteweg-de Vries (KdV) solitons. The profiles of the pseudopotential, the large amplitude solitons as well as the dynamical evolution of KdV solitons, are numerically studied with the system parameters as above. It is found that the pair-ion plasmas with positively charged dusts support the propagation of solitary waves (SWs) with only the negative potential. The results may be useful for the excitation of SWs in laboratory dusty pair-ion plasmas, electron-free industrial plasmas as well as for observation in space plasmas where electron density is negligibly small compared to that of negative ions.

  20. Complex dielectric function of ion implantation amorphized SiC determined by spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Lohner, T.; Zolnai, Z.; Petrik, P.; Battistig, G.; Koos, A.; Osvath, Z.; Fried, M. [Research Institute for Technical Physics and Materials Science, Konkoly Thege Miklos ut 29-33, 1121 Budapest (Hungary); Garcia Lopez, J.; Morilla, Y. [Centro Nacional de Aceleradores, Av. Thomas A. Edison 7, 41092 Sevilla (Spain)

    2008-05-15

    Measuring with a spectroscopic ellipsometer we determined the complex dielectric function of completely amorphous silicon carbide prepared by ion implantation. 860 keV Ni{sup +} ions were implanted into single crystalline 4H-SiC to produce thick amorphized layer. Ion beam analysis was applied to assess total amorphization. For this purpose {sup 4}He{sup +} ion beam of 3.5 MeV was selected taking the advantage that the scattering cross section of carbon at this energy at 165 detection angle is about six times larger than the Rutherford type. Atomic force microscopy was performed to characterize the roughness of the ion-implanted surfaces. Multiple energy Ar{sup +} implantation was used to produce homogeneous amorphous layer. The Tauc-Lorentz model was applied for the evaluation of the ellipsometric results. The implantation-induced swelling was obtained through the measurement of the step height across the masked and implanted areas. Comparison was made among the complex dielectric functions of amorphized SiC studied by us and by different research groups. It is found that the complex dielectric functions of amorphized SiC differ considerably if different ion implantation conditions were applied. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Pre-formed plasma channels for ion beam fusion

    Science.gov (United States)

    Peterson, R. R.; Olson, C. L.

    1997-04-01

    The transport of driver ions to the target in an IFE power plant is an important consideration in IFE target chamber design. Pre-formed laser-guided plasma discharge channels have been considered for light ions because they reduce the beam microdivergence constraints, allow long transport lengths, and require a target chamber fill gas that can help protect the target chamber from the target explosion. Here, pre-formed plasma discharge channels are considered for heavy ion transport. The channel formation parameters are similar to those for light ions. The allowable ion power per channel is limited by the onset of plasma instabilities and energy loss due to a reverse emf from the rapid channel expansion driven by the ion beam.

  2. Electron Acoustic Waves in Pure Ion Plasmas

    Science.gov (United States)

    Anderegg, F.; Affolter, M.; Driscoll, C. F.; O'Neil, T. M.; Valentini, F.

    2012-10-01

    Electron Acoustic Waves (EAWs) are the low-frequency branch of near-linear Langmuir (plasma) waves: the frequency is such that the complex dielectric function (Dr, Di) has Dr= 0; and ``flattening'' of f(v) near the wave phase velocity vph gives Di=0 and eliminates Landau damping. Here, we observe standing axisymmetric EAWs in a pure ion column.footnotetextF. Anderegg, et al., Phys. Rev. Lett. 102, 095001 (2009). At low excitation amplitudes, the EAWs have vph˜1.4 v, in close agreement with near-linear theory. At moderate excitation strengths, EAW waves are observed over a range of frequencies, with 1.3 v vphvph.footnotetextF. Valentini et al., arXiv:1206.3500v1. Large amplitude EAWs have strong phase-locked harmonic content, and experiments will be compared to same-geometry simulations, and to simulations of KEENfootnotetextB. Afeyan et al., Proc. Inertial Fusion Sci. and Applications 2003, A.N.S. Monterey (2004), p. 213. waves in HEDLP geometries.

  3. The Kadomtsev-Petviashvili equation for dust ion-acoustic solitons in pair-ion plasmas

    Institute of Scientific and Technical Information of China (English)

    Hafeez Ur-Rehman

    2013-01-01

    Using the reductive perturbation method,we have derived the Kadomtsev-Petviashvili (KP) equation to study the nonlinear properties of electrostatic collisionless dust ion-acoustic solitons in pair-ion (p-i) plasmas.We have chosen the fluid model for the positive ions,the negative ions,and a fraction of static charged (both positively and negatively) dust particles.Numerical solutions of these dust ion-acoustic solitons are plotted and their characteristics are discussed.It is found that only the amplitudes of the electrostatic dust ion-acoustic solitons vary when the dust is introduced in the pair-ion plasma.It is also noticed that the amplitude and the width of these solitons both vary when the thermal energy of the positive or negative ions is varied.It is shown that potential hump structures are formed when the temperature of the negative ions is higher than that of the positive ions,and potential dip structures are observed when the temperature of the positive ions supersedes that of the negative ions.As the pair-ion plasma mimics the electron-positron plasma,thus our results might be helpful in understanding the nonlinear dust ion acoustic solitary waves in super dense astronomical bodies.

  4. Deuterium recycling rate constants derived from plasma implantation/desorption shots in a martensitic steel surface

    Energy Technology Data Exchange (ETDEWEB)

    Sedano, L.A. [CIEMAT/DIAE, Madrid (Spain); European Commission/JRC, H-Materials Interaction Sector, Ispra (Italy); Esteban, G.A. [UPV-EHU/ETSIIT, D. Nuc. Eng. and Fluid Mec., Bilbao (Spain); Perujo, A. [European Commission/JRC, H-Materials Interaction Sector, Ispra (Italy)

    2001-12-04

    The recombination (K{sub 2}) and dissociation rate constants (K{sub 1}) are essential magnitudes for the tracking of tritium at the first wall (FW) of fusion reactors (FR). This paper presents our plasma implantation/recycling test, the modelling of the experiment and the results obtained for K{sub 2} and K{sub 1} in the case of a deuterium (D{sub 3}{sup +}/D{sub 2}{sup +}) plasma in the martensitic steel DIN 1.4914 (MANET). Once parasitic contributions were accounted, the D{sub 2} release from the target was seen to be surface limited. The values obtained for K{sub 1} and K{sub 2} show low dispersion on impinging flux and ion energies. For K{sub 1} a roughly constant value of 7 x 10{sup -6} mol Pa{sup -1} m{sup -2} s{sup -1} is derived. The obtained K{sub 2} is written as: K{sub 2} = 2.414 exp (-1571/RT) (m{sup 4} mol{sup -1} s{sup -1}), with R = 8.314 J mol{sup -1} K{sup -1}. Our activation energies agree with those existing in the literature derived from permeation experiments. High reflection coefficients are derived, which are in good agreement with the classical theory of ion scattering at low energy. (orig.)

  5. Laser-plasma booster for ion post acceleration

    Directory of Open Access Journals (Sweden)

    Satoh D.

    2013-11-01

    Full Text Available A remarkable ion energy increase is demonstrated for post acceleration by a laser-plasma booster. An intense short-pulse laser generates a strong current by high-energy electrons accelerated, when this intense short-pulse laser illuminates a plasma target. The strong electric current creates a strong magnetic field along the high-energy electron current in plasma. During the increase phase in the magnetic field, a longitudinal inductive electric field is induced for the forward ion acceleration by the Faraday law. Our 2.5-dimensional particle-in-cell simulations demonstrate a remarkable increase in ion energy by several tens of MeV.

  6. Parametric instabilities in magnetized bi-ion and dusty plasmas

    Indian Academy of Sciences (India)

    N F Cramer; M P Hertzberg; S V Vladimirov

    2003-12-01

    The excitation of low frequency modes of oscillations in a magnetized bi-ion or dusty plasma with parametric pumping of the magnetic field is analysed. The equation of motion governing the perturbed plasma is derived and parametrically excited transverse modes propagating along the magnetic field are found. With multiple ion species or charged dust present, a number of different circularly polarized modes can be excited. The stability of these modes is investigated as a function of the plasma parameters. The modulational instabilities of large amplitude normal modes, modified by the extra ion species or dust and propagating along the magnetic field, are also investigated.

  7. Fractal Pattern Growth in Ti-Implanted Steel with High Ion Flux

    Institute of Scientific and Technical Information of China (English)

    张通和; 吴瑜光; 刘安东

    2002-01-01

    We report on the formation of metal nanometre phase and fractal patterns in steel using metal vapour vacuum arc source ion implantation with high ion flux. The dense nanometre phases are cylindrical and well dispersed in the Ti-implanted layer with an ion flux up to 50μA/cm2. The collision fractal pattern is formed in Ti-implanted steel with an ion flux of 25μA/cm2 and the disconnected fractal pattern is observed with an ion flux of 50μA/cm2.The average density ofnanometre phases decreases from 1.2 × 1011/cm2 to 6.5 × 1010/cm2 as the ion flux increases from 25 μA/cm2 to 50 μA/cm2. Fractal pattern growth is in remarkable agreement with Sander's diffusion-limited aggregation model. The alloy clusters have diffused and aggregated in chains forming branches to grow a beautiful tree during Ti implantation with an ion flux ranging from 75μA/cm2 to 85μA/cm2. We discuss the model of fractal pattern growth during ion implantation with high ion flux.

  8. Unidirectional expansion of lattice parameters in GaN induced by ion implantation

    Institute of Scientific and Technical Information of China (English)

    Fa Tao; Li Lin; Yao Shu-De; Wu Ming-Fang; Zhou Sheng-Qiang

    2011-01-01

    This paper reports that the 150-keV Mn ions are implanted into GaN thin film grown on Al2O3 by metalorganic chemical vapour deposition. The X-ray diffraction reciprocal spacing mapping is applied to study the lattice parameter variation upon implantation and post-annealing. After implantation, a significant expansion is observed in the perpendicular direction. The lattice strain in perpendicular direction strongly depends on ion fluence and implantation geometry and can be partially relaxed by post-annealing. While in the parallel direction, the lattice parameter approximately keeps the same as the unimplanted GaN, which is independent of ion fluence, implantation geometry and post-annealing temperature.

  9. Influence of implantation of three metallic ions on the mechanical properties of two polymers

    Energy Technology Data Exchange (ETDEWEB)

    Swain, M.V. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), Lindfield, NSW (Australia). Div. of Applied Physics; Perry, A.J. [Australian National Univ., Canberra, ACT (Australia); Treglio, J.R.

    1996-12-31

    Ion implantation of poly ethylene terephthalate (PET) and polystyrene (PS) with various high energy metallic ions at 70 kV to dose of 3 x 10{sup 16} ions/cm 2 have been made. Measurements of the mechanical properties of the polymers before and after implantation have been made with an ultra microindentation system using both pointed and a small (2 nm) radiused spherical tipped indenter. Significant differences have been observed between the Ti-B dual implanted surfaces and those of the Au and W implanted surfaces. For both the PET and PS the resistance to indenter penetration at very low loads was much greater for the Ti-B dual implanted surfaces. The estimated hardness and modulus versus depth of penetration for both indenters shows that the spherical indenter produces more consistent and less controversial values that are somewhat lower than the optimistic estimates from pointed indenters. 8 refs., 2 fig.

  10. Blistering and cracking of LiTaO{sub 3} single crystal under helium ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Changdong; Lu, Fei; Ma, Yujie [Shandong University, School of Information Science and Engineering, Jinan, Shandong (China)

    2014-11-29

    Blistering and cracking in LiTaO{sub 3} surface are investigated after 200-keV helium ion implantation and subsequent post-implantation annealing. Rutherford backscattering/channeling is used to examine the lattice damage caused by ion implantation. Blistering is observed through optical microscopy in a dynamic heating process. Atomic force microscopy and scanning electron microscopy measurements are used to detect the LiTaO{sub 3} surface morphology. Experimental results show that blistering and flaking are dependent on implantation fluence, beam current, and also annealing temperature. We speculate that the surface cracking of He{sup +}-implanted LiTaO{sub 3} results from the implantation-induced stress and compression. (orig.)

  11. No positive effect of Acid etching or plasma cleaning on osseointegration of titanium implants in a canine femoral condyle press-fit model

    DEFF Research Database (Denmark)

    Saksø, Henrik; Jakobsen, Thomas Vestergaard; Mortensen, Mikkel Saksø

    2013-01-01

    Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants.......Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants....

  12. Photoluminescence evolution in self-ion-implanted and annealed silicon

    Institute of Scientific and Technical Information of China (English)

    Yang Yu; Wang Chong; Yang Rui-Dong; Li Liang; Xiong Fei; Bao Ji-Ming

    2009-01-01

    Si+ ion-implanted silicon wafers are annealed at different temperatures from room temperature to 950℃ and then characterized by using the photoluminescence (PL) technique at different recorded temperatures (RETs). Plentiful optical features are observed and identified clearly in these PL curves. The PL spectra of these samples annealed in different temperature ranges are correspondingly dominated by different emission peaks. Several characteristic features, such as an R line, S bands, a W line, the phonon-assistant W~(TA) and Si~(TO) peaks, can be detected in the PL spectra of samples annealed at different temperatures. For the samples annealed at 800 ℃, emission peaks from the dislocations bounded at the deep energy levels of the forbidden band, such as D_1 and D_2 bands, can be observed at a temperature as high as 280 K. These data strongly indicate that a severe transformation of defect structures could be manipulated by the annealing and recorded temperatures. The deactivation energies of the main optical features are extracted from the PL data at different temperatures.

  13. EFFECT OF CERIUM ION IMPLANTATION ON THE AQUEOUS CORROSION BEHAVIOR OF ZIRCONIUM

    Institute of Scientific and Technical Information of China (English)

    D.Q. Peng; X.D. Bai; Q.G. Zhou; X.W. Chen; R.H. Yu; X.Y. Liu

    2004-01-01

    In order to study the influence of cerium ion implantation on the aqueous corrosion behavior of zirconium, specimens were implanted by cerium ions with a dosage range from 1 ×1016 to 1 ×1017 ions/cm2 at about 150℃, using MEWA source at an acceler ative voltage of 40kV. The valence of the surface layer was analyzed by X-ray photoelectron spectroscopy (XPS); Three-sweep potentiodynamic polarization measurement was employed to value the aqueous corrosion resistance of zirconium in a 0.5mol/L H2SO4 solution. It was found that a remarkable decline in the aqueous corrosion behavior of zirconium implanted with cerium ions compared with that of the as-received zirconium. Finally, the mechanism of the corrosion resistance decline of the cerium-implanted zirconium is discussed.

  14. Surface properties of nitrogen-ion-implanted TiNi shape memory alloy

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    X-ray diffraction (XRD), auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS) were used to characterize the surface properties of the N+-ion-implanted TiNi alloy.There is a high nitrogen content region at the outermost surface of the N+-ion-implanted TiNi alloy.The detected nitrogen exists mainly in the form of TiN.Small amounts of Ti3O5 and TiO2 also exist on the surface of the N+-ion-implanted TiNi sample.The modified layer of the N+-ion-implanted sample can work as an obstacle layer of the nickel's dissolution, which obstructs Ni dissolving from the TiNi surface effectively.

  15. CHARACTERIZATION OF PRECIPITATES IN CUBIC SILICON CARBIDE IMPLANTED WITH 25Mg+ IONS

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Weilin; Spurgeon, Steven R.; Liu, Jia; Edwards, Danny J.; Schreiber, Daniel K.; Henager, Charles H.; Kurtz, Richard J.; Wang, Yongqiang

    2016-09-26

    The aim of this study is to characterize precipitates in Mg+ ion implanted and high-temperature annealed cubic silicon carbide using scanning transmission electron microscopy, electron energy loss spectroscopy and atom probe tomography.

  16. SELECTIVE NEURITE OUTGROWTH ON SILVER NEGATIVE ION (Ag-)-IMPLANTED POLYSTYRENE SURFACES

    Institute of Scientific and Technical Information of China (English)

    Hiroko Sato; Hiroshi Tsuji; Hitoshi Sasaki; Shinichi Ikemura; Yasuhito Gotoh; Junzo Ishikawa; Sei-ichi Nishimoto

    2004-01-01

    The negative ion implantation technique was applied to modify polymer surfaces of culture dishes for neuronal cells, PC12h. The silver negative ion (Ag-)-implantation was carried out at an ion energy of 20 keV and a dose of 3 ×1015 ions/cm2 with non-treated polystyrene (NTPS), tissue culture polystyrene (TCPS), and collagen-coated TCPS-Iwaki (CCPS). Ag--implanted surfaces of Ag/NTPS, Ag/TCPS, and Ag/CCPS were studied with respect to contact angle and/or chemical composition. The numerical values of contact angles on Ag/NTPS and Ag/TCPS were similar within experimental error, indicating the resemblance in their hydrophobicity and hydrophilicity. The PC12h cells, however, were attached only to the Ag--implanted region of NTPS, but not to the non-implanted NTPS region. Moreover, the neurite outgrowth was also observed to extend specifically along the Ag--implanted region of NTPS but not on the non-implanted NTPS region,although neurites extended towards all directions on collagen-coated TCPS as a control surface. There was no remarkable difference in neurite outgrowth among Ag--implanted regions of TCPS and CCPS. Thus Ag/NTPS region was affirmed to promote highly selective attachment, growth, and differentiation of PC 12h cells, although its mechanism is still unknown.

  17. Effect of calcium and phosphorus ion implantation on the corrosion resistance and biocompatibility of titanium.

    Science.gov (United States)

    Krupa, D; Baszkiewicz, J; Kozubowski, J A; Lewandowska-Szumieł, M; Barcz, A; Sobczak, J W; Biliński, A; Rajchel, A

    2004-01-01

    This paper is concerned with the corrosion resistance and biocompatibility of titanium after surface modification by the ion implantation of calcium or phosphorus or calcium + phosphorus. Calcium and phosphorus ions were implanted in a dose of 10(17) ions/cm(2). The ion beam energy was 25 keV. The microstructure of the implanted layers was examined by TEM. The chemical composition of the surface layers was determined by XPS and SIMS. The corrosion resistance was examined by electrochemical methods in a simulated body fluid (SBF) at a temperature of 37 degrees C. The biocompatibility was evaluated in vitro. As shown by TEM results, the surface layers formed during calcium, phosphorus and calcium + phosphorus implantation were amorphous. The results of the electrochemical examinations (Stern's method) indicate that the calcium, phosphorus and calcium + phosphorus implantation into the surface of titanium increases its corrosion resistance in stationary conditions after short- and long-term exposures in SBF. Potentiodynamic tests show that the calcium-implanted samples undergo pitting corrosion during anodic polarisation. The breakdown potentials measured are high (2.5 to 3 V). The good biocompatibility of all the investigated materials was confirmed under the specific conditions of the applied examination, although, in the case of calcium implanted titanium it was not as good as that of non-implanted titanium.

  18. Low-cost ion implantation and annealing technology for solar cells

    Science.gov (United States)

    Kirkpatrick, A. H.; Minnucci, J. A.; Greenwald, A. C.

    1980-01-01

    Ion implantation and thermal annealing techniques for processing junctions and back surface layers in solar cells are discussed. Standard 10 keV (31)p(+) junction implants and 25 keV (11)B(+) back surface implants in combination with three-step furnace annealing are used for processing a range of silicon materials and device structures. Cells with efficiencies up to 16.5% AM1 are being produced, and large-area terrestrial cells with implanted junctions and back fields being fabricated in pilot production exhibit average efficiencies in excess of 15% AM1. Thermal annealing methods for removal of the radiation damage caused by implantation should be replaced by transient processing techniques in future production. Design studies have been completed for solar cell processing implanters to support 10 MW/yr and 100 MW/yr production lines, and analyses indicate that implantation costs can be reduced to approximately 1 cent/watt.

  19. Scanning-electron-microscopy observations and mechanical characteristics of ion-beam-sputtered surgical implant alloys

    Science.gov (United States)

    Weigand, A. J.; Meyer, M. L.; Ling, J. S.

    1977-01-01

    An electron bombardment ion thruster was used as an ion source to sputter the surfaces of orthopedic prosthetic metals. Scanning electron microscopy photomicrographs were made of each ion beam textured surface. The effect of ion texturing an implant surface on its bond to bone cement was investigated. A Co-Cr-W alloy and surgical stainless steel were used as representative hard tissue implant materials to determine effects of ion texturing on bulk mechanical properties. Work was done to determine the effect of substrate temperature on the development of an ion textured surface microstructure. Results indicate that the ultimate strength of the bulk materials is unchanged by ion texturing and that the microstructure will develop more rapidly if the substrate is heated prior to ion texturing.

  20. Comparison of plasma sheet ion composition with the IMF and solar wind plasma

    Science.gov (United States)

    Lennartsson, W.

    Plasma sheet energetic ion data (0.1- to 16 keV/e) obtained by the Plasma Composition Experiment on ISEE-1 between 10 and 23 earth radii are compared with concurrent IMF and solar wind plasma data. The densities of H(+) and He(++) ions in the plasma sheet are found to be the highest, and the most nearly proportional to the solar wind density, when the IMF B(z) is not northward. The density of terrestrial O(+) ions increases strongly with increasing magnitude of the IMF, in apparent agreement with the notion that the IMF plays a fundamental role in the electric coupling between the solar wind and the ionosphere.

  1. Development of physical fundamentals and computer design of technology of ion implantation of metals

    Energy Technology Data Exchange (ETDEWEB)

    Kolobov, Yu.P.; Sharkeev, Yu.P.; Abdrashitov, V.G.; Kashin, O.A

    2001-07-01

    The unique possibilities of controlled modification of the chemical composition, structure and properties of thin surface films of metals and alloys are offered by the method of high-dose ion implantation (Hll). Modification of the surface of materials by ion implantation has been used on an increasing scale as an industrial technology of ensuring a large increase of the service life of components and tools. It is urgent to investigate the physical fundamentals of this promising technology.

  2. Direction-dependent RBS channelling studies in ion implanted LiNbO3

    Science.gov (United States)

    Wendler, E.; Becker, G.; Rensberg, J.; Schmidt, E.; Wolf, S.; Wesch, W.

    2016-07-01

    Damage formation in ion implanted LiNbO3 was studied by Rutherford backscattering spectrometry (RBS) along various directions of the LiNbO3 crystal. From the results obtained it can be unambiguously concluded that Nb atoms being displaced during ion implantation preferably occupy the free octahedron sites of the LiNbO3 lattice structure and most likely also form NbLi antisite defects.

  3. Direction-dependent RBS channelling studies in ion implanted LiNbO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Wendler, E., E-mail: elke.wendler@uni-jena.de; Becker, G.; Rensberg, J.; Schmidt, E.; Wolf, S.; Wesch, W.

    2016-07-15

    Damage formation in ion implanted LiNbO{sub 3} was studied by Rutherford backscattering spectrometry (RBS) along various directions of the LiNbO{sub 3} crystal. From the results obtained it can be unambiguously concluded that Nb atoms being displaced during ion implantation preferably occupy the free octahedron sites of the LiNbO{sub 3} lattice structure and most likely also form Nb{sub Li} antisite defects.

  4. Efficient ion beam extraction from a flowing plasma

    Energy Technology Data Exchange (ETDEWEB)

    Dembinski, M.; John, P.K.

    1979-10-01

    A moving plasma with directed flow velocities v larger than the ion acoustic speed c/sub s/ is used as a source of high-current ion beams in the 10--20-keV range of energies. Current densities up to 3 A/cm/sup 2/ are obtained at the plasma boundary which is an order of magnitude larger than the limiting value of Bohm current in a stationary plasma. The observed current densities were proportional to v, unlike the Bohm current densities which are proportional to ion acoustic speed. Total ion currents up to approx.100 A were extracted from the plasma through a two electrode extraction system. Simple geometric shaping of the electrodes enabled an 8-cm-diam beam to be focused to approx.7 mm.

  5. Plasma-filled applied B ion diode experiments using a plasma opening switch

    Science.gov (United States)

    Renk, T. J.

    1994-12-01

    In order for a plasma opening switch (POS) to open quickly and transfer power efficiently from an inductively charged vacuum transmission line to an applied B ion diode, the load impedance of the ion diode may be required to have an initial low impedance phase. A plasma-filled diode has such an impedance history. To test the effect of a plasma-filled diode on POS-diode coupling, a drifting plasma was introduced from the cathode side of an applied B ion diode operated on the LION accelerator (1.5 MV, 4 Ohm, 40 ns) at Cornell University. This plasma readily crossed the 2.1 T magnetic insulation field of the diode, and resulted in both increased diode electrical power, and an increased ability of the ion beam to remove material from a target. The plasma did not appear to have a noticeable effect on local beam steering angle.

  6. Laser Plasmas : Multiple charge states of titanium ions in laser produced plasma

    Indian Academy of Sciences (India)

    M Shukla; S Bandhyopadhyay; V N Rai; A V Kilpio; H C Pant

    2000-11-01

    An intense laser radiation (1012 to 1014 W/cm-2) focused on the solid target creates a hot (≥ 1 keV) and dense plasma having high ionization state. The multiple charged ions with high current densities produced during laser matter interaction have potential application in accelerators as an ion source. This paper presents generation and detection of highly stripped titanium ions (Ti) in laser produced plasma. An Nd:glass laser (KAMETRON) delivering 50 J energy ( = 0.53 m) in 2.5 ns was focused onto a titanium target to produce plasma. This plasma was allowed to drift across a space of ∼ 3 m through a diagnostic hole in the focusing mirror before ions are finally detected with the help of electrostatic ion analyzer. Maximum current density was detected for the charge states of +16 and +17 of Ti ions for laser intensity of ∼ 1014 W/cm-2.

  7. Annealing effects on the migration of ion-implanted cadmium in glassy carbon

    Science.gov (United States)

    Hlatshwayo, T. T.; Sebitla, L. D.; Njoroge, E. G.; Mlambo, M.; Malherbe, J. B.

    2017-03-01

    The migration behaviour of cadmium (Cd) implanted into glassy carbon and the effects of annealing on radiation damage introduced by ion implantation were investigated. The glassy carbon substrates were implanted with Cd at a dose of 2 × 1016 ions/cm2 and energy of 360 keV. The implantation was performed at room temperature (RT), 430 °C and 600 °C. The RT implanted samples were isochronally annealed in vacuum at 350, 500 and 600 °C for 1 h and isothermally annealed at 350 °C up to 4 h. The as-implanted and annealed samples were characterized by Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Raman results revealed that implantation at room temperature amorphized the glassy carbon structure while high temperature implantations resulted in slightly less radiation damage. Isochronal annealing of the RT implanted samples resulted in some recrystallization as a function of increasing temperature. The original glassy carbon structure was not achieved at the highest annealing temperature of 600 °C. Diffusion of Cd in glassy carbon was already taking place during implantation at 430 °C. This diffusion of Cd was accompanied by significant loss from the surface during implantation at 600 °C. Isochronal annealing of the room temperature implanted samples at 350 °C for 1 h caused Cd to diffuse towards the bulk while isothermal annealing at 500 and 600 °C resulted in the migration of implanted Cd toward the surface accompanied by a loss of Cd from the surface. Isothermal annealing at 350 °C for 1 h caused Cd to diffuse towards the bulk while for annealing time >1 h Cd diffused towards the surface. These results were interpreted in terms of trapping and de-trapping of implanted Cd by radiation damage.

  8. Doping effects induced by potassium ion implantation in solid C{sub 60}

    Energy Technology Data Exchange (ETDEWEB)

    Trouillas, P. [Faculte des Sci., Limoges (France). Lab. d`Electronique des Polymers sous Faisceau Ionique; Moliton, A. [Faculte des Sci., Limoges (France). Lab. d`Electronique des Polymers sous Faisceau Ionique; Ratier, B. [Faculte des Sci., Limoges (France). Lab. d`Electronique des Polymers sous Faisceau Ionique

    1995-08-01

    Ion implantation is presented here as another technique for investigating the electrical properties of doped solid C{sub 60}. The conductivity and the thermopower have been studied versus the implantation parameters in order to investigate electrical transport phenomena which occur in implanted solid C{sub 60}, and thus prove doping effects. First results on ion implantation in C{sub 60} show a strong competition between damaging (induced by energetic ions) and doping effect (induced by charge transfer). Generally, electron transfers between the potassium atoms and the C{sub 60} molecules produce a conducting phase: up to x{approx} =0.1, metallic K{sub 3}C{sub 60} islands are dispersed in an insulating phase (virgin C{sub 60}); then, for x>0.1, damage plays a major role, leading to conduction paths through the samples (the saturation threshold x{approx} =0.1 is lower than in chemical doping due to the degradations). Potassium ion implantation with low energy (E{approx} =30 keV) and low fluence (D<10{sup 15} ions/cm{sup 2}) seems to provide the best implantation parameters for doping. Indeed, small ion size, low energy and low fluence are necessary in order to diminish the degradation effects. (orig.)

  9. Effect of Energetic Ion on Spatial Distribution of Recombining Plasma

    Science.gov (United States)

    Okamoto, A.; Daibo, A.; Kitajima, S.; Kumagai, T.; Takahashi, H.; Takahashi, T.; Tsubota, S.

    Spatial distribution of electron density is considered. By using a one-dimensional recombining plasma model, effects of transient energetic ion flux are investigated. The time response of the system against the transient flux is dominated by the recombination frequency. The magnitude of modification of the spatial distribution is determined by the ratio between the ionization due to the energetic ion and the recombination of the bulk plasma.

  10. Structural and magnetic characteristics of FeCo thin films modified by combinatorial ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Groudeva-Zotova, S. [Combinatorial Materials Science Group- Research Center CAESAR, Ludwig-Erhard-Allee 2, 53175 Bonn (Germany); Karl, H. [Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Savan, A. [Combinatorial Materials Science Group- Research Center CAESAR, Ludwig-Erhard-Allee 2, 53175 Bonn (Germany); Feydt, J. [Combinatorial Materials Science Group- Research Center CAESAR, Ludwig-Erhard-Allee 2, 53175 Bonn (Germany); Wehner, B. [Combinatorial Materials Science Group- Research Center CAESAR, Ludwig-Erhard-Allee 2, 53175 Bonn (Germany); Walther, T. [Combinatorial Materials Science Group- Research Center CAESAR, Ludwig-Erhard-Allee 2, 53175 Bonn (Germany); Zotov, N. [Combinatorial Materials Science Group- Research Center CAESAR, Ludwig-Erhard-Allee 2, 53175 Bonn (Germany)]. E-mail: zotov@caesar.de; Stritzker, B. [Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Ludwig, A. [Combinatorial Materials Science Group- Research Center CAESAR, Ludwig-Erhard-Allee 2, 53175 Bonn (Germany); Institute of Materials, Faculty of Mechanical Engineering, Ruhr-University, 44780 Bochum (Germany)

    2006-01-20

    This work presents results on modifications of the structure and the magnetic properties of magnetron-sputtered Fe{sub 5}Co{sub 5} films induced by high dose Sm or Xe ion implantation. A combinatorial approach was used in order to screen a wide range of implantation doses from 4 x 10{sup 15} to 1.6 x 10{sup 17} ions/cm{sup 2}. Sm-implanted FeCo films are considered as precursors for the synthesis of multi-phase exchange-spring magnetic materials while Xe ion implantation of such films is known as a method to modify film stresses and magnetic properties. Materials libraries of as-implanted films were investigated by energy dispersive X-ray analysis (EDX) and secondary ion mass spectrometry (SIMS) for the film composition and concentration depth profiles, transmission electron microscopy (TEM) and X-ray diffraction (XRD) for the film morphology and crystalline structure, vibrating sample magnetometry (VSM) for the magnetization behaviour and four-point probe measurements for the film resistivity. Three main results were found on the basis of this combinatorial study: (i) The high-dose Sm-implanted samples have an overall Sm concentration above the value necessary for Sm-Fe(Co) alloy formation and show magnetic hysteresis curves corresponding to two-phase or two-layer film structure; (ii) The two implanted series show quite different magnetic anisotropy in the film plane - a negligible one for Xe and a strong one for Sm implantation; (iii) For the Sm-implanted samples a clear local maxima in the coercivity H{sub c} and the anisotropy field H {sub k} can be seen at D {sub Sm} {>=} 1 x 10{sup 16} ions/cm{sup 2}. The XRD spectra of the libraries show that the last two effects are closely related to the film strains introduced by the implantation process.

  11. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    Science.gov (United States)

    Reichel, Christian; Feldmann, Frank; Müller, Ralph; Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul; Hermle, Martin; Glunz, Stefan W.

    2015-11-01

    Passivated contacts (poly-Si/SiOx/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF2), the ion implantation dose (5 × 1014 cm-2 to 1 × 1016 cm-2), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iVoc) of 725 and 720 mV, respectively. For p-type passivated contacts, BF2 implantations into intrinsic a-Si yield well passivated contacts and allow for iVoc of 690 mV, whereas implanted B gives poor passivation with iVoc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved Voc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with Voc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

  12. Comparative Evaluation of Osseointegration of Dental Endodontic Implants with and without Plasma- Sprayed Hydroxy apatite Coating

    Directory of Open Access Journals (Sweden)

    Moosavi SB

    2001-05-01

    Full Text Available Bone osseointegration around dental implant can cause earlier stabilization and fixation of implant and reduce healing time. Hydroxyapatite coating can affect bone osseointegration and enhance its rates. The aim of this study was comparison of osseointegration between plasma sprayed hydroxyapatite coated and uncoated dental implants in cats. Four endodontic implants including, vitallium and two stainless steel with and without hydroxyapatite coating were prepared and placed in mandibular canines of 20 cats after completion of root canal treatment and osseous preparation. After a healing period of 4 months, investigation by scanning electron microscopy showed significant difference in ossointegration between coated and uncoated dental implants and average bone osseointegration of coated implants was more than uncoated implants.

  13. Optical Filters Utilizing Ion Implanted Bragg Gratings in SOI Waveguides

    Directory of Open Access Journals (Sweden)

    M. P. Bulk

    2008-01-01

    Full Text Available The refractive index modulation associated with the implantation of oxygen or silicon into waveguides formed in silicon-on-insulator (SOI has been investigated to determine the feasibility of producing planar, implantation induced Bragg grating optical filters. A two-dimensional coupled mode theory-based simulation suggests that relatively short grating lengths, on the order of a thousand microns, can exhibit sufficient wavelength suppression, of >10 dB, using the implantation technique. Fabricated planar implanted slab-guided SOI waveguides demonstrated an extinction of −10 dB for TE modes and −6 dB for TM modes for the case of oxygen implantation. Extinctions of −5 dB and −2 dB have been demonstrated with silicon implantation.

  14. Enhancement of surface properties of SAE 1020 by chromium plasma immersion recoil implantation

    Science.gov (United States)

    Ueda, M.; Mello, C. B.; Beloto, A. F.; Rossi, J. O.; Reuther, H.

    2007-04-01

    SAE 1020 steel is commonly used as concrete reinforcement and small machine parts, but despite its good mechanical properties, as ductility, hardness and wear resistance, it is susceptible to severe corrosion. It is well known that chromium content above 12% in Fe alloys increases their corrosion resistance. In order to obtain this improvement, we studied the introduction of chromium atoms into the matrix of SAE 1020 steel by recoil implantation process using a plasma immersion ion implantation (PIII) system. Potentiodynamic scans showed that the presence of Cr film leads to a gain in the corrosion potential, from -650 mV to -400 mV. After PIII treatment, the corrosion potential increased further to -340 mV, but the corrosion current density presented no significant change. Vickers microhardness tests showed surface hardness increase of up to about 27% for the treated samples. Auger electron spectroscopy showed that, for a 30 nm film, Cr was introduced for about 20 nm into the steel matrix. Tribology tests, of pin-on-disk type, showed that friction coefficient of treated samples was reduced by about 50% and a change in wear mechanism, from adhesive to abrasive mode, occurred.

  15. Intense ion beam generation, plasma radiation source and plasma opening switch research

    Science.gov (United States)

    Hammer, D. A.; Coleman, M. D.; Qi, N.; Similon, P. L.; Sudan, R. N.

    1989-04-01

    This report describes research on intense ion beam diodes, plasma opening switches and dense z-pinch plasma radiators. Laser induced fluorescence spectroscopy has been used to map the electrostatic potential profile in a plasma-prefilled magnetically insulated ion diode. In a simple planar diode, the measured profile is inconsistent with the electrons being confined in a sheath near the cathode by the magnetic field. Rather, the profile implies the presence of electrons throughout the accelerating gap. A theoretical model of the penetration of current and magnetic field into a plasma, and of the current-driven effective collision frequency has been developed. The snowplow action of the rising magnetic field causes a steep rise in the plasma density at the leading edge. The subsequent multistreaming of the ions caused by ion reflection at the current layer could lead to ion heating through collective effects. The two-dimensional electron flow in the plasma cathode vacuum gap is also treated. Dense z-pinch plasma radiation source experiments have been initiated on the LION accelerator using gas puff and fine wire loads. The x-pinch was found to be a more effective way to generate soft x-rays than a single wire pinch or a gas puff implosion. Plasma opening switch experiments being initiated, and plasma anode ion diode development work being terminated are also briefly described.

  16. Interaction of an ion bunch with a plasma slab

    Energy Technology Data Exchange (ETDEWEB)

    Krasovitskiy, V. B., E-mail: krasovit@mail.ru [Russian Academy of Sciences, Keldysh Institute of Applied Mathematics (Russian Federation); Turikov, V. A. [Peoples’ Friendship University of Russia (Russian Federation)

    2016-11-15

    Charge neutralization of a short ion bunch passing through a plasma slab is studied by means of numerical simulation. It is shown that a fraction of plasma electrons are trapped by the bunch under the action of the collective charge separation field. The accelerated electrons generated in this process excite beam−plasma instability, thereby violating the trapping conditions. The process of electron trapping is also strongly affected by the high-frequency electric field caused by plasma oscillations at the slab boundaries. It is examined how the degree of charge neutralization depends on the parameters of the bunch and plasma slab.

  17. Modification in surface properties of poly-allyl-diglycol-carbonate (CR-39 implanted by Au+ ions at different fluences

    Directory of Open Access Journals (Sweden)

    Sagheer Riffat

    2016-06-01

    Full Text Available Ion implantation has a potential to modify the surface properties and to produce thin conductive layers in insulating polymers. For this purpose, poly-allyl-diglycol-carbonate (CR-39 was implanted by 400 keV Au+ ions with ion fluences ranging from 5 × 1013 ions/cm2 to 5 × 1015 ions/cm2. The chemical, morphological and optical properties of implanted CR-39 were analyzed using Raman, Fourier transform infrared (FT-IR spectroscopy, atomic force microscopy (AFM and UV-Vis spectroscopy. The electrical conductivity of implanted samples was determined through four-point probe technique. Raman spectroscopy revealed the formation of carbonaceous structures in the implanted layer of CR-39. From FT-IR spectroscopy analysis, changes in functional groups of CR-39 after ion implantation were observed. AFM studies revealed that morphology and surface roughness of implanted samples depend on the fluence of Au ions. The optical band gap of implanted samples decreased from 3.15 eV (for pristine to 1.05 eV (for sample implanted at 5 × 1015 ions/cm2. The electrical conductivity was observed to increase with the ion fluence. It is suggested that due to an increase in ion fluence, the carbonaceous structures formed in the implanted region are responsible for the increase in electrical conductivity.

  18. Damage properties in ion-implanted YbVO4 crystals using RBS/Channeling study

    Science.gov (United States)

    Jia, Chuan-Lei; Wei, Zhi-Ning

    2014-03-01

    YbVO4 crystals are implanted with 3.0 MeV Ni ions and 600 keV H ions with fluences of 2.0-10.0×1014 cm-2 and 6.0×1016 cm-2, respectively. In addition, post-implantation thermal annealing is performed at selected temperatures. The disorder induced by implantation and the effect of the annealing on the recovery of the crystal lattice are investigated by RBS/Channeling measurements with the help of simulation code RUMP.

  19. Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    CUI Jin-Ming; CHEN Xiang-Dong; FAN Le-Le; GONG Zhao-Jun; ZOU Chong-Wen; SUN Fang-Wen; HAN Zheng-Fu; GUO Guang-Can

    2012-01-01

    Nitrogen-vacancy defect color centers are created in a high purity single crystal diamond by nitrogen-ion implantation.Both optical spectrum and optically detected magnetic resonance are measured for these artificial quantum emitters.Moreover,with a suitable mask,a lattice composed of nitrogen-vacancy centers is fabricated.Rabi oscillation driven by micro-waves is carried out to show the quality of the ion implantation and potential in quantum manipulation.Along with compatible standard lithography,such an implantation technique shows high potential in future to make structures with nitrogen-vacancy centers for diamond photonics and integrated photonic quantum chip.

  20. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    Science.gov (United States)

    Rysbaev, A. S.; Khuzhaniyazov, Zh. B.; Normuradov, M. T.; Rakhimov, A. M.; Bekpulatov, I. R.

    2014-11-01

    The effect of implantation of Ba, P, B, and alkali element ions with a low energy ( E 0 narrowing of the band gap in silicon, which can be explained by overlapping of the wavefunctions of electrons of impurity atoms and the formation of the impurity subband overlapping with the allowed band. After implantation thermal annealing, SiP, BaSi, and SiB3 films of nano-sized thickness are obtained for the first time. Optimal regimes of ion implantation and subsequent annealing for the formation of silicide films are determined, and their electron structure is investigated.

  1. Production yield of rare-earth ions implanted into an optical crystal

    Energy Technology Data Exchange (ETDEWEB)

    Kornher, Thomas, E-mail: t.kornher@physik.uni-stuttgart.de; Xia, Kangwei; Kolesov, Roman; Reuter, Rolf; Villa, Bruno; Wrachtrup, Jörg [3. Physikalisches Institut, Universität Stuttgart, 70569 Stuttgart (Germany); Kukharchyk, Nadezhda; Wieck, Andreas D. [Angewandte Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum (Germany); Siyushev, Petr [Universität Ulm, Institut für Quantenoptik, 89081 Ulm (Germany); Stöhr, Rainer [3. Physikalisches Institut, Universität Stuttgart, 70569 Stuttgart (Germany); Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Schreck, Matthias [Experimentalphysik IV, Universität Augsburg, 86159 Augsburg (Germany); Becker, Hans-Werner [RUBION, Ruhr-Universität Bochum, 44780 Bochum (Germany)

    2016-02-01

    Rare-earth (RE) ions doped into desired locations of optical crystals might enable a range of novel integrated photonic devices for quantum applications. With this aim, we have investigated the production yield of cerium and praseodymium by means of ion implantation. As a measure, the collected fluorescence intensity from both implanted samples and single centers was used. With a tailored annealing procedure for cerium, a yield up to 53% was estimated. Praseodymium yield amounts up to 91%. Such high implantation yield indicates a feasibility of creation of nanopatterned rare-earth doping and suggests strong potential of RE species for on-chip photonic devices.

  2. Electrostatic acceleration and deflection system for modification of semiconductor materials in laser-produced ion implantation

    Science.gov (United States)

    Rosinski, M.; Parys, P.; Wolowski, J.; Gasior, P.; Pisarek, M.

    2010-10-01

    To optimize the efficiency of laser ion implantation technology, it is advisable to properly select the laser beam characteristics (i.e. power density, target illumination geometry, etc.). In many applications, it is important to select a specific range of ion energy to implant the ions at a given depth and at a given density. To make it possible, the electrostatic system for acceleration and deflection of low-energy laser-produced ions can be used. This contribution provides a description of the experiments aimed at the implantation of Ge ions from a narrow energy band onto SiO2/Si substrates, which were conducted at IPPLM. As the source of irradiation, we used a Nd:YAG up to 10 Hz laser system with pulse duration of 3.5 ns and pulse energy ∼ 0.5 J, which gave a power density of 1010 W/cm2. The ion stream parameters were measured using the time-of-fight method. The laser-produced ions passing through the diaphragm have been accelerated in the system of electrodes. Due to the electrostatic field configuration provided by the electrode system and a diaphragm located at the axis of the system, the selected ions were focussed at the area of interest to increase implantation density. The accelerating voltage, the distance of the diaphragm from the target, the diaphragm diameter and the gap width between electrodes were changed for choosing the desired parameters of the ion stream.

  3. Surface engineering of a Zr-based bulk metallic glass with low energy Ar- or Ca-ion implantation.

    Science.gov (United States)

    Huang, Lu; Zhu, Chao; Muntele, Claudiu I; Zhang, Tao; Liaw, Peter K; He, Wei

    2015-02-01

    In the present study, low energy ion implantation was employed to engineer the surface of a Zr-based bulk metallic glass (BMG), aiming at improving the biocompatibility and imparting bioactivity to the surface. Ca- or Ar-ions were implanted at 10 or 50 keV at a fluence of 8 × 10(15)ions/cm(2) to (Zr0.55Al0.10Ni0.05Cu0.30)99Y1 (at.%) BMG. The effects of ion implantation on material properties and subsequent cellular responses were investigated. Both Ar- and Ca-ion implantations were suggested to induce atom displacements on the surfaces according to the Monte-Carlo simulation. The change of atomic environment of Zr in the surface regions as implied by the alteration in X-ray absorption measurements at Zr K-edge. X-ray photoelectron spectroscopy revealed that the ion implantation process has modified the surface chemical compositions and indicated the presence of Ca after Ca-ion implantation. The surface nanohardness has been enhanced by implantation of either ion species, with Ca-ion implantation showing more prominent effect. The BMG surfaces were altered to be more hydrophobic after ion implantation, which can be attributed to the reduced amount of hydroxyl groups on the implanted surfaces. Higher numbers of adherent cells were found on Ar- and Ca-ion implanted samples, while more pronounced cell adhesion was observed on Ca-ion implanted substrates. The low energy ion implantation resulted in concurrent modifications in atomic structure, nanohardness, surface chemistry, hydrophobicity, and cell behavior on the surface of the Zr-based BMG, which were proposed to be mutually correlated with each other. Published by Elsevier B.V.

  4. Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

    Science.gov (United States)

    Tran, Tuan T.; Alkhaldi, Huda S.; Gandhi, Hemi H.; Pastor, David; Huston, Larissa Q.; Wong-Leung, Jennifer; Aziz, Michael J.; Williams, J. S.

    2016-08-01

    Ion implantation with high ion fluences is indispensable for successful use of germanium (Ge) in the next generation of electronic and photonic devices. However, Ge readily becomes porous after a moderate fluence implant ( ˜1 ×1015 ion cm-2 ) at room temperature, and for heavy ion species such as tin (Sn), holding the target at liquid nitrogen (LN2) temperature suppresses porosity formation only up to a fluence of 2 ×1016 ion cm-2 . We show, using stylus profilometry and electron microscopy, that a nanometer scale capping layer of silicon dioxide significantly suppresses the development of the porous structure in Ge during a S n - implant at a fluence of 4.5 ×1016 ion cm-2 at LN2 temperature. The significant loss of the implanted species through sputtering is also suppressed. The effectiveness of the capping layer in preventing porosity, as well as suppressing sputter removal of Ge, permits the attainment of an implanted Sn concentration in Ge of ˜15 at.% , which is about 2.5 times the maximum value previously attained. The crystallinity of the Ge-Sn layer following pulsed-laser-melting induced solidification is also greatly improved compared with that of uncapped material, thus opening up potential applications of the Ge-Sn alloy as a direct bandgap material fabricated by an ion beam synthesis technique.

  5. Dense Metal Plasma in a Solenoid for Ion Beam Neutralization

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre; Kauffeldt, Marina; Oks, Efim M.; Roy, Prabir K.

    2010-10-30

    Space-charge neutralization is required to compress and focus a pulsed, high-current ion beam on a target for warm dense matter physics or heavy ion fusion experiments. We described approaches to produce dense plasma in and near the final focusing solenoid through which the ion beam travels, thereby providing an opportunity for the beam to acquire the necessary space-charge compensating electrons. Among the options are plasma injection from pulsed vacuum arc sources located outside the solenoid, and using a high current (> 4 kA) pulsed vacuum arc plasma from a ring cathode near the edge of the solenoid. The plasma distribution is characterized by photographic means, by an array of movable Langmuir probes, by a small single probe, and by evaluating Stark broadening of the Balmer H beta spectral line. In the main approach described here, the plasma is produced at several cathode spots distributed azimuthally on the ring cathode. It is shown that the plasma is essentially hollow, as determined by the structure of the magnetic field, though the plasma density exceeds 1014 cm-3 in practically all zones of the solenoid volume if the ring electrode is placed a few centimeters off the center of the solenoid. The plasma is non-uniform and fluctuating, however, since its density exceeds the ion beam density it is believed that this approach could provide a practical solution to the space charge neutralization challenge.

  6. Ion Temperature-Measurements in Tokamak Plasmas by Rutherford Scattering

    NARCIS (Netherlands)

    Vanblokland, A. A. E.; Barbian, E. P.; Donne, A. J. H.; van der Grift, A. F.; Grimbergen, T. W. M.; Oyevaar, T.; Schüller, F. C.; Tammen, H. F.; Vanderven, H. W.; Vijverberg, T. F.; Dewinter, F. D. A.; Bertschinger, G.; Cosler, A.; Korten, M.

    1992-01-01

    A Rutherford scattering diagnostic has been applied at the TEXTOR tokamak to obtain spatially and temporally resolved information on the temperature of the bulk ions in the plasma. In the experimental setup, a helium atomic beam (30-keV, 12-mA equivalent current) passes vertically through the plasma

  7. Wave Propagation in an Ion Beam-Plasma System

    DEFF Research Database (Denmark)

    Jensen, T. D.; Michelsen, Poul; Juul Rasmussen, Jens

    1979-01-01

    The spatial evolution of a velocity- or density-modulated ion beam is calculated for stable and unstable ion beam plasma systems, using the linearized Vlasov-Poisson equations. The propagation properties are found to be strongly dependent on the form of modulation. In the case of velocity...

  8. Calculation of Ion Equilibrium Temperature in Ultracold Neutral Plasmas

    Institute of Scientific and Technical Information of China (English)

    李金星; 曹明涛; 韩亮; 齐越蓉; 张首刚; 高宏; 李福利; T.C.Killian

    2011-01-01

    We provide a fast iteration method to calculate the ion equilibrium temperature in an ultracold neutral plasma (UNP). The temperature as functions of electron initial temperature and ion density is obtained and compared with the recent UNP experimental data. The theoretical predictions agree with the experimental results very well. The calculated ion equilibrium temperature by this method can be applied to study the UNP expansion process more effectively.%We provide a fast iteration method to calculate the ion equilibrium temperature in an ultracold neutral plasma (UNP).The temperature as functions of electron initial temperature and ion density is obtained and compared with the recent UNP experimental data.The theoretical predictions agree with the experimental results very well.The calculated ion equilibrium temperature by this method can be applied to study the UNP expansion process more effectively.

  9. Sheet resistance of alumina ceramic after high energy implantation of tantalum ions

    Energy Technology Data Exchange (ETDEWEB)

    Savkin, Konstantin P., E-mail: savkinkp@mail2000.ru [Institute of High Current Electronics SB RAS, 2/3 Akademichesky Avenue, 634055 Tomsk (Russian Federation); Bugaev, Alexey S., E-mail: bugaev@opee.hcei.tsc.ru [Institute of High Current Electronics SB RAS, 2/3 Akademichesky Avenue, 634055 Tomsk (Russian Federation); Nikolaev, Alexey G., E-mail: nik@opee.hcei.tsc.ru [Institute of High Current Electronics SB RAS, 2/3 Akademichesky Avenue, 634055 Tomsk (Russian Federation); Oks, Efim M., E-mail: oks@opee.hcei.tsc.ru [Institute of High Current Electronics SB RAS, 2/3 Akademichesky Avenue, 634055 Tomsk (Russian Federation); Shandrikov, Maxim V., E-mail: shandrikov@opee.hcei.tsc.ru [Institute of High Current Electronics SB RAS, 2/3 Akademichesky Avenue, 634055 Tomsk (Russian Federation); Yushkov, Georgy Yu., E-mail: gyushkov@mail.ru [Institute of High Current Electronics SB RAS, 2/3 Akademichesky Avenue, 634055 Tomsk (Russian Federation); Tyunkov, Andrey V., E-mail: tyunkov@opee.hcei.tsc.ru [Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Avenue, 634050 Tomsk (Russian Federation); Savruk, Elena V., E-mail: savruk@mail.ru [Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Avenue, 634050 Tomsk (Russian Federation)

    2014-08-15

    Highlights: • Tantalum ions with the average energy about 145 keV were implanted in the surfaces of flat polycrystalline alumina samples. • The sheet resistance of implanted ceramic reduced after implantation with increasing of the implanted dose. • Normalized surface conductivity of treated alumina ceramic reduced only on 1% during 200 days after finishing the implantation process. • Creation of weak conducting layer on the surface of the ceramic insulator electric field strength of the flashover increases more than 25%. - Abstract: The results of investigation of the sheet resistance of alumina ceramic as a function of the fluence of implanted metal ions are presented. Tantalum ions with the average energy about 145 keV were used in experiments. Estimation of the sheet resistance was performed from analysis of volt–ampere characteristics by measuring the leakage current at a voltage between 100 V and several kilovolts, which was applied at a small area of the implanted surface. Energy dispersive X-ray analysis was used to determine composition of elements in the surface of the implanted ceramics. As a practical application of research results, it was shown that, after the creation of a weak conducting layer on the surface of the ceramic insulator, the electric field strength of the flashover increases by more than 25%.

  10. Effect of plasma inhomogeneity on ion acceleration when an ultra-intense laser pulse interacts with a foil target

    Energy Technology Data Exchange (ETDEWEB)

    Andreev, A.A.; Platonov, K.Yu. [Institute for Laser Physics, SC Vavilov State Optical Institute, St. Petersburg (Russian Federation); Zhidkov, A.G. [University of Tokyo, Graduate School of Engineering, Nuclear Engineering Research Laboratory, Tokai, Naka, Ibaraki (Japan); Sasaki, A. [Advanced Photon Research Center JAERI, Kizu-cho, Soraku-gun, Kyoto (Japan)

    2002-07-01

    Fast electrons generated via the interaction of ultra-intense laser pulses with a solid target can produce multi-MeV ions from laser-induced plasmas. These fast ions can be used for various applications ranging from the ion implantation to the stimulation of nuclear reactions. The most important point here is the efficiency of production of such fast ions. We analyse in detail, with the help of an analytical model and particle-in-cell simulations, the most efficient acceleration mechanisms including the ponderomotive force driving and acceleration by the shock wave, and compare the electrostatic ion acceleration at the front side and at the rear side of a foil target. We also determine the optimal plasma density distribution shaped by the laser pre-pulse. (author)

  11. Photoluminescence study of 1018 meV defect lines from ion-implanted silicon

    CERN Document Server

    Lee, H S; Seong, E Z; Kim, S M; Lim, H J

    1999-01-01

    We investigated the defects of ion-implanted silicon with boron and argon ions using photoluminescence method. The 1018 meV line, so called I sub 1 line, and its phonon side bands were observed in both boron- and argon-implanted silicon crystals. In argon-implanted silicon crystals, we observed 1009 meV line (I sub r - Ar) and its phonon side bands which arose from argon-I sub 1 complex in addition to the splitting of the I sub 1 line. Annealing temperature dependence of the intensities of the I sub 1 and I sub 1 -Ar lines in argon-implanted silicon was very similar for both Czochralski and float zone silicon crystals whereas that of boron-implanted silicon was very different between the two growing methods. We discussed on the origin of the defects responsible for the I sub 1 and I sub 1 - Ar lines.

  12. Comparison of proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Barik, S; Tan, H H; Jagadish, C [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2007-05-02

    We report and compare proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots (QDs). After ion implantation at 20-300 deg. C, the QDs are rapid thermally annealed at 850 deg. C for 30 s. Proton implantation induces less energy shift than P ion implantation for a given concentration of atomic displacements due to the more efficient dynamic annealing of the defects created by protons. The implantation-induced energy shift reaches a maximum value of about 260 meV for a dose of 5 x 10{sup 12} ions cm{sup -2} in the P ion implanted QDs, which also show narrower PL linewidths compared to the proton implanted QDs. We also report the effects of an InGaAs top cap layer on the ion implantation-induced QD intermixing and show that defect production and annihilation processes evolve differently in InGaAs and InP layers and vary with the implantation temperature. When the implantation is performed at higher temperatures, the energy shift of the P ion implanted QDs capped with an InP layer increases due to the reduction in larger defect cluster formation at higher temperatures, while the energy shift of the proton implanted QDs decreases due to increased dynamic annealing irrespective of their cap layers.

  13. Propagation of ion beams through a tenuous magnetized plasma

    Energy Technology Data Exchange (ETDEWEB)

    Chrien, E.F.; Valeo, E.J.; Kulsrud, R.M.; Oberman, C.R.

    1985-10-01

    When an ion beam is propagated through a plasma, the question of charge neutralization is critical to its propagation. We consider such a problem where the plasma is magnetized with magnetic field perpendicular to the beam. The plasma-number density and beam-number density are assumed comparable. We reduce the problem to a two-dimensional model, which we solve. The solution suggests that it should be possible to attain charge neutralization if the beam density is properly varied along itself.

  14. High-current ion beam from a moving plasma

    Energy Technology Data Exchange (ETDEWEB)

    Dembinski, M.; John, P.K.; Ponomarenko, A.G.

    1979-05-01

    High-current ion beams in the 10--20-keV range are extracted from a moving plasma. Current densities up to 2.5 A/cm/sup 2/ are obtained at the plasma boundary, which is almost an order of magnitude larger than the Bohm current. Total currents of over 100 A are obtained from the plasma. Simple geometric focusing gives current densities approx.200 A/cm/sup 2/ at the focus.

  15. Accessibility condition of wave propagation and multicharged ion production in electron cyclotron resonance ion source plasma

    Energy Technology Data Exchange (ETDEWEB)

    Kato, Yushi, E-mail: kato@eei.eng.osaka-u.ac.jp; Yano, Keisuke; Nishiokada, Takuya; Nagaya, Tomoki; Kimura, Daiju; Kumakura, Sho; Imai, Youta; Hagino, Shogo; Otsuka, Takuro; Sato, Fuminobu [Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita-shi, Osaka 565-0871 (Japan)

    2016-02-15

    A new tandem type source of electron cyclotron resonance (ECR) plasmas has been constructing for producing synthesized ion beams in Osaka University. Magnetic mirror field configuration with octupole magnets can be controlled to various shape of ECR zones, namely, in the 2nd stage plasma to be available by a pair mirror and a supplemental coil. Noteworthy correlations between these magnetic configurations and production of multicharged ions are investigated in detail, as well as their optimum conditions. We have been considering accessibility condition of electromagnetic and electrostatic waves propagating in ECR ion source plasma, and then investigated their correspondence relationships with production of multicharged ions. It has been clarified that there exits efficient configuration of ECR zones for producing multicharged ion beams experimentally, and then has been suggested from detail accessibility conditions on the ECR plasma that new resonance, i.e., upper hybrid resonance, must have occurred.

  16. Depth concentrations of deuterium ions implanted into some pure metals and alloys

    Science.gov (United States)

    Didyk, A. Yu.; Wiśniewski, R.; Kitowski, K.; Kulikauskas, V.; Wilczynska, T.; Hofman, A.; Shiryaev, A. A.; Zubavichus, Ya. V.

    2012-01-01

    Pure metals (Cu, Ti, Zr, V, Pd) and diluted Pd alloys (Pd-Ag, Pd-Pt, Pd-Ru, Pd-Rh) were implanted by 25-keV deuterium ions at fluences in the range (1.2-2.3) × 1022 m-2. The post-treatment depth distributions of deuterium ions were measured 10 days and three months after the implantation by using Elastic Recoil Detection Analysis (ERDA) and Rutherford Backscattering (RBS). Comparison of the obtained results allowed us to make conclusions about relative stability of deuterium and hydrogen gases in pure metals and diluted Pd alloys. Very high diffusion rates of implanted deuterium ions in V and Pd pure metals and Pd alloys were observed. Small-angle X-ray scattering revealed formation of nanosized defects in implanted corundum and titanium.

  17. FRACTAL PATTERN GROWTH OF METAL ATOM CLUSTERS IN ION IMPLANTED POLYMERS

    Institute of Scientific and Technical Information of China (English)

    ZHANG TONG-HE; WU YU-GUANG; SANG HAI-BO; ZHOU GU

    2001-01-01

    The fractal and multi-fractal patterns of metal atoms are observed in the surface layer and cross section of a metal ion implanted polymer using TEM and SEM for the first time. The surface structure in the metal ion implanted polyethylene terephthalane (PET) is the random fractal. Certain average quantities of the random geometric patterns contain self-similarity. Some growth origins appeared in the fractal pattern which has a dimension of 1.67. The network structure of the fractal patterns is formed in cross section, having a fractal dimension of 1.87. So it can be seen that the fractal pattern is three-dimensional space fractal. We also find the collision cascade fractal in the cross section of implanted nylon, which is similar to the collision cascade pattern in transverse view calculated by the TRIM computer program. Finally, the mechanism for the formation and growth of the fractal patterns during ion implantation is discussed.

  18. Defects and defect generation in oxide layer of ion implanted silicon-silicon dioxide structures

    CERN Document Server

    Baraban, A P

    2002-01-01

    One studies mechanism of generation of defects in Si-SiO sub 2 structure oxide layer as a result of implantation of argon ions with 130 keV energy and 10 sup 1 sup 3 - 3.2 x 10 sup 1 sup 7 cm sup - sup 2 doses. Si-SiO sub 2 structures are produced by thermal oxidation of silicon under 950 deg C temperature. Investigations were based on electroluminescence technique and on measuring of high-frequency volt-farad characteristics. Increase of implantation dose was determined to result in spreading of luminosity centres and in its maximum shifting closer to boundary with silicon. Ion implantation was shown, as well, to result in increase of density of surface states at Si-SiO sub 2 interface. One proposed model of defect generation resulting from Ar ion implantation into Si-SiO sub 2

  19. Assessment of CpTi Surface Properties after Nitrogen Ion Implantation with Various Doses and Energies

    Science.gov (United States)

    Fulazzaky, Mohamad Ali; Ali, Nurdin; Samekto, Haryanti; Ghazali, Mohd Imran

    2012-11-01

    Nitrogen ion implantation is one of the surface modification techniques used for increasing corrosion resistance of commercially pure titanium (CpTi). The nitrogen ion implanted CpTi in various doses markedly changes the corrosion resistance. Still the effect of nitrogen ion implantation on the CpTi at different energies needs to be verified. This study uses different methods to assess the CpTi surface properties after nitrogen ion implantation in various doses and energy. Surface hardness of the CpTi increases with an increase of the dose and decreases with an increase of the energy. The precipitation of the TiN increases with an increase of the nitrogen dose, and no formation of the Ti2N phase clearly appears. Corrosion resistance of the CpTi specimens can be upgraded to some extent after their surfaces are modified, implanting nitrogen ions at 100 keV by increasing dose. The optimum surface properties of the implanted CpTi are analyzed to contribute to materials science technology.

  20. A Plasma Ion Source for ISOLTRAP

    CERN Document Server

    Skov, Thomas Guldager

    2016-01-01

    In this report, my work testing the new Penning ion source as a summer student at ISOLTRAP is described. The project was composed of three stages: (1) Setting up a test laboratory in building 275, (2) characterizing the ion source, and (3) implementing and testing the source in the ISOLTRAP setup. After setting up the test laboratory, the ion source was tested in a constant pressure environment with produced ion currents in the range of nA . An extensive scan of the source ion current versus operating parameters (pressure, voltage) was performed. A setup with pulsed gas flow was also tested, allowing a reduction of the gas load on the vacuum system. The behavior of the ion source together with the ISOLTRAP setup was also investigated, allowing to understand current limitations and future directions of improvement.

  1. Microstructure and antibacterial property of stainless steel implanted by Cu ions

    Institute of Scientific and Technical Information of China (English)

    XU Bo-fan; NI Hong-wei; XIONG Ping-yuan; XIONG Juan; DAN Zhi-gang

    2004-01-01

    Copper ions were implanted into AISI 304 austenitic stainless steel by metal vapor vacuum are (MEVVA) with 60 - 100 keV energy and a dose range (0.2 - 5.0) × 1017 cm-2. Then Cu-implanted stainless steel was treated by a special antibacterial treatment. Antibacterial rates of Cu-implanted stainless steel, Cu-implanted stainless steel with special antibacterial treatment and un-implanted stainless steel were obtained by agar plate method. Phase composition in the implanted layer was analyzed by glancing X-ray diffraction (GXRD). Microstructure of antibacterial stainless steel was observed with transmission electron microscopy (TEM), and changes of the bacterium appearance after 24 h antibacterial action on the surface of un-implanted and Cu-implanted stainless steel with antibacterial treatment were observed with bio-TEM respectively. The results show that stainless steel obtains antibacterial property against E. coli when the Cu ions dose approaches to the saturated one. A suitable amount of Cu-rich phase uniformly disperses on the surface of Cu-implanted stainless steel that is treated by the special antibacterial treatment. The Cu-rich phase naked on the surface has a function of damage to pericellular membrane and cell wall,the pericellular membrane is thickened and the karyon degraded, and finally, bacteria die. Cu-rich phase naked on the surface endows stainless steel with best antibacterial property.

  2. Synergistic effects of iodine and silver ions co-implanted in 6H-SiC

    Science.gov (United States)

    Kuhudzai, R. J.; Malherbe, J. B.; Hlatshwayo, T. T.; van der Berg, N. G.; Devaraj, A.; Zhu, Z.; Nandasiri, M.

    2015-12-01

    Motivated by the aim of understanding the release of fission products through the SiC coating of fuel kernels in modern high temperature nuclear reactors, a fundamental investigation is conducted to understand the synergistic effects of implanted silver (Ag) and iodine (I) in 6H-SiC. The implantation of the individual species, as well as the co-implantation of 360 keV ions of I and Ag at room temperature in 6H-SiC and their subsequent annealing behaviour has been investigated by Secondary Ion Mass Spectrometry (SIMS), Atom Probe Tomography (APT) and X-ray Photoelectron Spectroscopy (XPS). SIMS and APT measurements indicated the presence of Ag in the co-implanted samples after annealing at 1500 °C for 30 h in sharp contrast to the samples implanted with Ag only. In samples implanted with Ag only, complete loss of the implanted Ag was observed. However, for I only implanted samples, some iodine was retained. APT of annealed co-implanted 6H-SiC showed clear spatial association of Ag and I clusters in SiC, which can be attributed to the observed I assisted retention of Ag after annealing. Such detailed studies will be necessary to identify the fundamental mechanism of fission products migration through SiC coatings.

  3. Non-thermal atmospheric pressure plasma functionalized dental implant for enhancement of bacterial resistance and osseointegration.

    Science.gov (United States)

    Lee, Jung-Hwan; Jeong, Won-Seok; Seo, Seog-Jin; Kim, Hae-Won; Kim, Kyoung-Nam; Choi, Eun-Ha; Kim, Kwang-Mahn

    2017-03-01

    Even though roughened titanium (Ti) and Ti alloys have been clinically used as dental implant, they encourage bacterial adhesion, leading to failure of the initial stability. Here, the non-thermal atmospheric pressure plasma jet (NTAPPJ) functionalized Ti and Ti alloy were investigated to promote cellular activities but inhibit the initial attachment of the adherent pioneer bacterium, Streptococcus sanguinis, without topographical changes. After the produced radicals from NTAPPJ were characterized, bacterial adhesion to specimens was assessed by PrestoBlue assay and live-dead staining with or without the NTAPPJ functionalizing. After the surface was characterized using optical profilometry, X-ray photoelectron spectroscopy and contact angle analysis, the ions released from the specimens were investigated. In vitro initial cell attachment (4h or 24h) with adhesion images and alkaline phosphatase activity (ALP, 14 days) measurements were performed using rat bone marrow-derived mesenchymal stem cells. The initial bacterial adhesion to the Ti and Ti alloy was significantly inhibited after NTAPPJ functionalizing (padhesion-resistance effect was induced by carbon cleaning, which was dependent on the working gas used on the Ti specimens (nitrogen>ammonia and air, padhesion with well-developed vinculin localization and consequent ALP activity at 14days to the NTAPPJ-functionalized specimens were superior to the non-treated specimens. For the promising success of dental implants, NTAPPJ functionalizing is suggested as a novel surface modification technique; this technique can help ensure the success of integration between the dental implants and bone tissues with less concern of inflammation. Copyright © 2016 The Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

  4. Slow ions in plasma wind tunnels. [satellite-ionosphere interacti