X-ray amplifier energy deposition scaling with channeled propagation

International Nuclear Information System (INIS)

Boyer, K.; Luk, T.S.; McPherson, A.

1991-01-01

The spatial control of the energy deposited for excitation of an x-ray amplifier plays an important role in the fundamental scaling relationship between the required energy, the gain and the wavelength. New results concerning the ability to establish confined modes of propagation of sort pulse radiation of sufficiently high intensity in plasmas lead to a sharply reduced need for the total energy deposited, since the concentration of deposited power can be very efficiently organized

Patterned deposition by atmospheric pressure plasma-enhanced spatial atomic layer deposition

NARCIS (Netherlands)

Poodt, P.; Kniknie, B.J.; Branca, A.; Winands, G.J.J.; Roozeboom, F.

2011-01-01

An atmospheric pressure plasma enhanced atomic layer deposition reactor has been developed, to deposit Al2O3 films from trimethyl aluminum and an He/O2 plasma. This technique can be used for 2D patterned deposition in a single in-line process by making use of switched localized plasma sources. It

Deposition of dielectric films on silicon using a fore-vacuum plasma electron source

Energy Technology Data Exchange (ETDEWEB)

Zolotukhin, D. B.; Tyunkov, A. V.; Yushkov, Yu. G., E-mail: yuyushkov@gmail.com [Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050 (Russian Federation); Oks, E. M. [Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050 (Russian Federation); Institute of High Current Electronics SB RAS, 2/3, Akademichesky Ave., Tomsk 634055 (Russian Federation)

2016-06-15

We describe an experiment on the use of a fore-vacuum-pressure, plasma-cathode, electron beam source with current up to 100 mA and beam energy up to 15 keV for deposition of Mg and Al oxide films on Si substrates in an oxygen atmosphere at a pressure of 10 Pa. The metals (Al and Mg) were evaporated and ionized using the electron beam with the formation of a gas-metal beam-plasma. The plasma was deposited on the surface of Si substrates. The elemental composition of the deposited films was analyzed.

Oxide cathodes produced by plasma deposition

International Nuclear Information System (INIS)

Scheitrum, G.; Caryotakis, G.; Pi, T.; Umstattd, R.; Brown, I.; Montiero, O.

1997-01-01

These are two distinct applications for high-current-density, long-life thermionic cathodes. The first application is as a substitute for explosive emission cathodes used in high-power microwave (HPM) devices being developed for Air Force programs. The second application is in SLAC's X-band klystrons for the Next Linear Collider (NLC). SLAC, UCD, and LBL are developing a plasma deposition process that eliminates the problems with binders, carbonate reduction, peeling, and porosity. The emission layer is deposited using plasma deposition of metallic barium in vacuum with an oxygen background gas. An applied bias voltage drives the oxide plasma into the nickel surface. Since the oxide is deposited directly, it does not have problems with poisoning from a hydrocarbon binder. The density of the oxide layer is increased from the 40--50% for standard oxide cathodes to nearly 100% for plasma deposition

Energy deposition in STARFIRE reactor components

International Nuclear Information System (INIS)

Gohar, Y.; Brooks, J.N.

1985-04-01

The energy deposition in the STARFIRE commercial tokamak reactor was calculated based on detailed models for the different reactor components. The heat deposition and the 14 MeV neutron flux poloidal distributions in the first wall were obtained. The poloidal surface heat load distribution in the first wall was calculated from the plasma radiation. The Monte Carlo method was used for the calculation to allow an accurate modeling for the reactor geometry

Crystalline and amorphous carbon nitride films produced by high-energy shock plasma deposition

International Nuclear Information System (INIS)

Bursilll, L.A.; Peng, Julin; Gurarie, V.N.; Orlov, A.V.; Prawer, S.

1995-01-01

High-energy shock plasma deposition techniques are used to produce carbon-nitride films containing both crystalline and amorphous components. The structures are examined by high-resolution transmission electron microscopy, parallel-electron-energy loss spectroscopy and electron diffraction. The crystalline phase appears to be face-centered cubic with unit cell parameter approx. a=0.63nm and it may be stabilized by calcium and oxygen at about 1-2 at % levels. The carbon atoms appear to have both trigonal and tetrahedral bonding for the crystalline phase. There is PEELS evidence that a significant fraction of the nitrogen atoms have sp 2 trigonal bonds in the crystalline phase. The amorphous carbon-nitride film component varies from essentially graphite, containing virtually no nitrogen, to amorphous carbon-nitride containing up to 10 at % N, where the fraction of sp 3 bonds is significant. 15 refs., 5 figs

Process maps for plasma spray. Part II: Deposition and properties

International Nuclear Information System (INIS)

XIANGYANG, JIANG; MATEJICEK, JIRI; KULKARNI, ANAND; HERMAN, HERBERT; SAMPATH, SANJAY; GILMORE, DELWYN L.; NEISER A, RICHARD Jr.

2000-01-01

This is the second paper of a two part series based on an integrated study carried out at the State University of New York at Stony Brook and Sandia National Laboratories. The goal of the study is the fundamental understanding of the plasma-particle interaction, droplet/substrate interaction, deposit formation dynamics and microstructure development as well as the deposit property. The outcome is science-based relationships, which can be used to link processing to performance. Molybdenum splats and coatings produced at 3 plasma conditions and three substrate temperatures were characterized. It was found that there is a strong mechanical/thermal interaction between droplet and substrate, which builds up the coatings/substrate adhesion. Hardness, thermal conductivity, and modulus increase, while oxygen content and porosity decrease with increasing particle velocity. Increasing deposition temperature resulted in dramatic improvement in coating thermal conductivity and hardness as well as increase in coating oxygen content. Indentation reveals improved fracture resistance for the coatings prepared at higher deposition temperature. Residual stress was significantly affected by deposition temperature, although not significant by particle energy within the investigated parameter range. Coatings prepared at high deposition temperature with high-energy particles suffered considerably less damage in wear tests. Possible mechanisms behind these changes are discussed within the context of relational maps which are under development

Niobium thin film coating on a 500-MHz copper cavity by plasma deposition

Energy Technology Data Exchange (ETDEWEB)

Haipeng Wang; Genfa Wu; H. Phillips; Robert Rimmer; Anne-Marie Valente; Andy Wu

2005-05-16

A system using an Electron Cyclotron Resonance (ECR) plasma source for the deposition of a thin niobium film inside a copper cavity for superconducting accelerator applications has been designed and is being constructed. The system uses a 500-MHz copper cavity as both substrate and vacuum chamber. The ECR plasma will be created to produce direct niobium ion deposition. The central cylindrical grid is DC biased to control the deposition energy. This paper describes the design of several subcomponents including the vacuum chamber, RF supply, biasing grid and magnet coils. Operational parameters are compared between an operating sample deposition system and this system. Engineering work progress toward the first plasma creation will be reported here.

Controlled fluoridation of amorphous carbon films deposited at reactive plasma conditions

Directory of Open Access Journals (Sweden)

Yoffe Alexander

2015-09-01

Full Text Available A study of the correlations between plasma parameters, gas ratios, and deposited amorphous carbon film properties is presented. The injection of a C4F8/Ar/N2 mixture of gases was successfully used in an inductively coupled plasma system for the preparation of amorphous carbon films with different fluoride doping at room-temperature, using silicon as a substrate. This coating was formed at low-pressure and low-energy using an inductively coupled plasma process. A strong dependence between the ratios of gases during deposition and the composition of the substrate compounds was shown. The values of ratios between Ar (or Ar+N2 and C4F8 - 1:1 and between N2 and Ar - 1:2 in the N2/Ar/C4F8 mixture were found as the best for low fluoridated coatings. In addition, an example of improving the etch-passivation in the Bosch procedure was described. Scanning electron microscopy with energy dispersive spectroscopy options, X-ray diffraction, and X-ray reflectivity were used for quantitative analysis of the deposited films.

Heating of polymer substrate by discharge plasma in radiofrequency magnetron sputtering deposition

International Nuclear Information System (INIS)

Sirghi, Lucel; Popa, Gheorghe; Hatanaka, Yoshinori

2006-01-01

The substrate used for the thin film deposition in a radiofrequency magnetron sputtering deposition system is heated by the deposition plasma. This may change drastically the surface properties of the polymer substrates. Deposition of titanium dioxide thin films on polymethyl methacrylate and polycarbonate substrates resulted in buckling of the substrate surfaces. This effect was evaluated by analysis of atomic force microscopy topography images of the deposited films. The amount of energy received by the substrate surface during the film deposition was determined by a thermal probe. Then, the results of the thermal probe measurements were used to compute the surface temperature of the polymer substrate. The computation revealed that the substrate surface temperature depends on the substrate thickness, discharge power and substrate holder temperature. For the case of the TiO 2 film depositions in the radiofrequency magnetron plasma, the computation indicated substrate surface temperature values under the polymer melting temperature. Therefore, the buckling of polymer substrate surface in the deposition plasma may not be regarded as a temperature driven surface instability, but more as an effect of argon ion bombardment

Industrial implementation of plasma deposition using the expanding thermal plasma technique

NARCIS (Netherlands)

Sanden, van de M.C.M.; Oever, van den P.J.; Creatore, M.; Schaepkens, M.; Miebach, T.; Iacovangelo, C.D.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Kessels, W.M.M.

2004-01-01

Two successful industrial implementations of the expanding thermal plasma setup, a novel plasma source, obtaining high deposition rate are discussed. The Ar/O2/hexamethyldisiloxane and Ar/O2/octamethyl-cyclosiloxane-fed expanding thermal plasma setup is used to deposit scratch resistant silicone

Very low pressure plasma sprayed yttria-stabilized zirconia coating using a low-energy plasma gun

International Nuclear Information System (INIS)

Zhu, Lin; Zhang, Nannan; Bolot, Rodolphe; Planche, Marie-Pierre; Liao, Hanlin; Coddet, Christian

2011-01-01

In the present study, a more economical low-energy plasma source was used to perform a very low pressure plasma-spray (VLPPS) process. The plasma-jet properties were analyzed by means of optical emission spectroscopy (OES). Moreover, yttria-stabilized zirconia coating (YSZ) was elaborated by a F100 low-power plasma gun under working pressure of 1 mbar, and the substrate specimens were partially shadowed by a baffle-plate during plasma spraying for obtaining different coating microstructures. Based on the SEM observation, a column-like grain coating was deposited by pure vapor deposition at the shadowed region, whereas, in the unshadowed region, the coating exhibited a binary microstructure which was formed by a mixed deposition of melted particles and evaporated particles. The mechanical properties of the coating were also well under investigation. (orig.)

Energy coupling in the plasma focus

International Nuclear Information System (INIS)

Wainwright, T.E.; Pickles, W.L.; Sahlin, H.L.; Price, D.F.

1979-01-01

Experiments have been performed with a 125-kJ plasma focus to investigate mechanisms for rapid coupling of inductively-stored energy into plasmas. The coupling can take place through the formation of an electron or ion beam that deposits its energy in a target or directly by the penetration of the magnetic field into a resistive plasma. Some preliminary results from experiments of both types are described. The experiments use a replaceable conical anode tip that is intended to guide the focus to within a few millimeters of the axis, where it can suddenly deliver energy either to a small target or to particles that are accelerated. X-ray and fast-ion diagnostics have been used to study the effects

Study on effect of plasma surface treatments for diamond deposition by DC arc plasmatron.

Science.gov (United States)

Kang, In-Je; Joa, Sang-Beom; Lee, Heon-Ju

2013-11-01

To improve the thermal conductivity and wear resistance of ceramic materials in the field of renewable energy technologies, diamond coating by plasma processing has been carried out in recent years. This study's goal is to improve diamond deposition on Al2O3 ceramic substrates by plasma surface treatments. Before diamond deposition was carried out in a vacuum, plasma surface treatments using Ar gas were conducted to improve conditions for deposition. We also conducted plasma processing for diamond deposition on Al2O3 ceramic substrates using a DC arc Plasmatron. The Al2O3 ceramic substrates with diamond film (5 x 15 mm2), were investigated by SEM (Scanning Electron Microscopy), AFM (Atomic Force Microscopy) and XRD (X-ray Diffractometer). Then, the C-H stretching of synthetic diamond films by FTIR (Fourier Transform Infrared Spectroscopy) was studied. We identified nanocrystalline diamond films on the Al2O3 ceramic substrates. The results showed us that the deposition rate of diamond films was 2.3 microm/h after plasma surface treatments. Comparing the above result with untreated ceramic substrates, the deposition rate improved with the surface roughness of the deposited diamond films.

Review: Plasma-enhanced chemical vapor deposition of nanocrystalline diamond

Directory of Open Access Journals (Sweden)

Katsuyuki Okada

2007-01-01

Full Text Available Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles of 200–700 nm diameter have been prepared in a 13.56 MHz low-pressure inductively coupled CH4/CO/H2 plasma. The bonding state of carbon atoms was investigated by ultraviolet-excited Raman spectroscopy. Electron energy loss spectroscopy identified sp2-bonded carbons around the 20–50 nm subgrains of nanocrystalline diamond particles. Plasma diagnostics using a Langmuir probe and the comparison with plasma simulation are also reviewed. The electron energy distribution functions are discussed by considering different inelastic interaction channels between electrons and heavy particles in a molecular CH4/H2 plasma.

Achieving uniform layer deposition by atmospheric-pressure plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Lee, Jae-Ok [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Kang, Woo Seok, E-mail: kang@kimm.re.kr [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Department of Environment & Energy Mechanical Engineering, University of Science & Technology (UST), Daejeon 305-350 (Korea, Republic of); Hur, Min; Lee, Jin Young [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Song, Young-Hoon [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Department of Environment & Energy Mechanical Engineering, University of Science & Technology (UST), Daejeon 305-350 (Korea, Republic of)

2015-12-31

This work investigates the use of plasma-enhanced chemical vapor deposition under atmospheric pressure for achieving uniform layer formation. Electrical and optical measurements demonstrated that the counterbalance between oxygen and precursors maintained the homogeneous discharge mode, while creating intermediate species for layer deposition. Several steps of the deposition process of the layers, which were processed on a stationary stage, were affected by flow stream and precursor depletion. This study showed that by changing the flow streamlines using substrate stage motion uniform layer deposition under atmospheric pressure can be achieved. - Highlights: • Zirconium oxide was deposited by atmospheric-pressure plasma-enhanced chemical vapor deposition. • Homogeneous plasma was maintained by counterbalancing between discharge gas and precursors. • Several deposition steps were observed affected by the gas flow stream and precursor depletion. • Thin film layer was uniformly grown when the substrate underwent a sweeping motion.

Tailored ion energy distributions on plasma electrodes

International Nuclear Information System (INIS)

Economou, Demetre J.

2013-01-01

As microelectronic device features continue to shrink approaching atomic dimensions, control of the ion energy distribution on the substrate during plasma etching and deposition becomes increasingly critical. The ion energy should be high enough to drive ion-assisted etching, but not too high to cause substrate damage or loss of selectivity. In many cases, a nearly monoenergetic ion energy distribution (IED) is desired to achieve highly selective etching. In this work, the author briefly reviews: (1) the fundamentals of development of the ion energy distribution in the sheath and (2) methods to control the IED on plasma electrodes. Such methods include the application of “tailored” voltage waveforms on an electrode in continuous wave plasmas, or the application of synchronous bias on a “boundary electrode” during a specified time window in the afterglow of pulsed plasmas

Aligned, plasma sprayed SmCo5 deposits

International Nuclear Information System (INIS)

Kumar, K.; Das, D.

1986-01-01

Highly aligned SmCo 5 deposits were produced using plasma spraying. c-axis alignment, normal to the plane of the deposit, was achieved by depositing the Sm-Co alloys on steel substrates maintained at high temperatures. The substrates were heated by the plasma flame to obtain the high temperatures. The attainment of a range of substrate temperatures was made possible through control over the geometry of the substrate

Substrate Effect on Plasma Clean Efficiency in Plasma Enhanced Chemical Vapor Deposition System

Directory of Open Access Journals (Sweden)

Shiu-Ko JangJian

2007-01-01

Full Text Available The plasma clean in a plasma-enhanced chemical vapor deposition (PECVD system plays an important role to ensure the same chamber condition after numerous film depositions. The periodic and applicable plasma clean in deposition chamber also increases wafer yield due to less defect produced during the deposition process. In this study, the plasma clean rate (PCR of silicon oxide is investigated after the silicon nitride deposited on Cu and silicon oxide substrates by remote plasma system (RPS, respectively. The experimental results show that the PCR drastically decreases with Cu substrate compared to that with silicon oxide substrate after numerous silicon nitride depositions. To understand the substrate effect on PCR, the surface element analysis and bonding configuration are executed by X-ray photoelectron spectroscopy (XPS. The high resolution inductively coupled plasma mass spectrometer (HR-ICP-MS is used to analyze microelement of metal ions on the surface of shower head in the PECVD chamber. According to Cu substrate, the results show that micro Cu ion and the CuOx bonding can be detected on the surface of shower head. The Cu ion contamination might grab the fluorine radicals produced by NF3 ddissociation in the RPS and that induces the drastic decrease on PCR.

Fast waves mode conversion and energy deposition in simulated, pre-heated, neoclassical, tight aspect ratio tokamak plasmas

Energy Technology Data Exchange (ETDEWEB)

Bruma, C.; Komoshvili, K. [Tel Aviv Univ. (Israel). School of Physics and Astronomy; Coll. of Judea and Samaria, Ariel (Israel); Cuperman, S. [Tel Aviv Univ. (Israel). School of Physics and Astronomy

2000-11-01

Some basic aspects of wave-plasma interaction of special interest for tight aspect ratio (spherical) tokamaks (ST's) are investigated numerically; these aspects include fast mode conversion and energy deposition. The study is based on the numerical solution of the full electro-magnetic (e.m.) wave equation which includes a quite general two-fluid, resistive MHD dielectric tensor, with consideration of equilibrium current and neoclassical effects. A generalized expression for the power absorption appropriate for the above scenario, with consideration of all the basic effects also present in the dielectric tensor-operator, was derived and used. The current-carrying ST-plasma has a circular cross-section and toroidicity effects are simulated by a Grad-Shafranov type, radially dependent axial magnetic field and its shear; however, the Shafranov shift is not considered. Actually, the equilibrium parameters and radial profiles (magnetic field, pressure and current) observed in the low field side (LFS) of spherical tokamaks (viz., START at Culham, UK) are used. Fast magnetosonic waves are launched from an external antenna into this simulated spherical tokamak plasma; these waves are converted to Alfven waves at points (layers) satisfying the Alfven resonance condition. Quantitative-results concerning (i) the structure and space dependence of the mode-converted Alfven waves and (ii) the basic features of the deposited power are presented. Their dependence on the equilibrium plasma current, neoclassical resistivity and electron inertia as well as on those of the antenna launched wave (wave numbers, frequency and current intensity) is systematically studied and discussed. (orig.)

Fast waves mode conversion and energy deposition in simulated, pre-heated, neoclassical, tight aspect ratio tokamak plasmas

International Nuclear Information System (INIS)

Bruma, C.; Komoshvili, K.; Cuperman, S.

2000-01-01

Some basic aspects of wave-plasma interaction of special interest for tight aspect ratio (spherical) tokamaks (ST's) are investigated numerically; these aspects include fast mode conversion and energy deposition. The study is based on the numerical solution of the full electro-magnetic (e.m.) wave equation which includes a quite general two-fluid, resistive MHD dielectric tensor, with consideration of equilibrium current and neoclassical effects. A generalized expression for the power absorption appropriate for the above scenario, with consideration of all the basic effects also present in the dielectric tensor-operator, was derived and used. The current-carrying ST-plasma has a circular cross-section and toroidicity effects are simulated by a Grad-Shafranov type, radially dependent axial magnetic field and its shear; however, the Shafranov shift is not considered. Actually, the equilibrium parameters and radial profiles (magnetic field, pressure and current) observed in the low field side (LFS) of spherical tokamaks (viz., START at Culham, UK) are used. Fast magnetosonic waves are launched from an external antenna into this simulated spherical tokamak plasma; these waves are converted to Alfven waves at points (layers) satisfying the Alfven resonance condition. Quantitative-results concerning (i) the structure and space dependence of the mode-converted Alfven waves and (ii) the basic features of the deposited power are presented. Their dependence on the equilibrium plasma current, neoclassical resistivity and electron inertia as well as on those of the antenna launched wave (wave numbers, frequency and current intensity) is systematically studied and discussed. (orig.)

A comparison of diamond growth rate using in-liquid and conventional plasma chemical vapor deposition methods

International Nuclear Information System (INIS)

Takahashi, Yoshiyuki; Toyota, Hiromichi; Nomura, Shinfuku; Mukasa, Shinobu; Inoue, Toru

2009-01-01

In order to make high-speed deposition of diamond effective, diamond growth rates for gas-phase microwave plasma chemical vapor deposition and in-liquid microwave plasma chemical vapor deposition are compared. A mixed gas of methane and hydrogen is used as the source gas for the gas-phase deposition, and a methanol solution of ethanol is used as the source liquid for the in-liquid deposition. The experimental system pressure is in the range of 60-150 kPa. While the growth rate of diamond increases as the pressure increases, the amount of input microwave energy per unit volume of diamond is 1 kW h/mm 3 regardless of the method used. Since the in-liquid deposition method provides a superior cooling effect through the evaporation of the liquid itself, a higher electric input power can be applied to the electrodes under higher pressure environments. The growth rate of in-liquid microwave plasma chemical vapor deposition process is found to be greater than conventional gas-phase microwave plasma chemical vapor deposition process under the same pressure conditions.

A comparison of diamond growth rate using in-liquid and conventional plasma chemical vapor deposition methods

Science.gov (United States)

Takahashi, Yoshiyuki; Toyota, Hiromichi; Nomura, Shinfuku; Mukasa, Shinobu; Inoue, Toru

2009-06-01

In order to make high-speed deposition of diamond effective, diamond growth rates for gas-phase microwave plasma chemical vapor deposition and in-liquid microwave plasma chemical vapor deposition are compared. A mixed gas of methane and hydrogen is used as the source gas for the gas-phase deposition, and a methanol solution of ethanol is used as the source liquid for the in-liquid deposition. The experimental system pressure is in the range of 60-150 kPa. While the growth rate of diamond increases as the pressure increases, the amount of input microwave energy per unit volume of diamond is 1 kW h/mm3 regardless of the method used. Since the in-liquid deposition method provides a superior cooling effect through the evaporation of the liquid itself, a higher electric input power can be applied to the electrodes under higher pressure environments. The growth rate of in-liquid microwave plasma chemical vapor deposition process is found to be greater than conventional gas-phase microwave plasma chemical vapor deposition process under the same pressure conditions.

Kinetic calculation of plasma deposition in castellated tile gaps

International Nuclear Information System (INIS)

Dejarnac, R.; Gunn, J.P.

2007-01-01

Plasma-facing divertors and limiters are armoured with castellated tiles to withstand intense heat fluxes. Recent experimental studies show that a non-negligible amount of deuterium is deposited in the gaps between tiles. We present here a numerical study of plasma deposition in this critical region. For this purpose we have developed a particle-in-cell code with realistic boundary conditions determined from kinetic calculations. We find a strong asymmetry of plasma deposition into the gaps. A significant fraction of the plasma influx is expelled from the gap to be deposited on the leading edge of the downstream tile

Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition

International Nuclear Information System (INIS)

Sharma, Uttam; Chauhan, Sachin S; Sharma, Jayshree; Sanyasi, A K; Ghosh, J; Choudhary, K K; Ghosh, S K

2016-01-01

The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m 2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS. (paper)

Thermal plasma chemical vapor deposition

International Nuclear Information System (INIS)

Heberlein, J.; Pfender, E.

1993-01-01

Thermal plasmas, with temperatures up to and even exceeding 10 4 K, are capable of producing high density vapor phase precursors for the deposition of relatively thick films. Although this technology is still in its infancy, it will fill the void between the relatively slow deposition processes such as physical vapor deposition and the high rate thermal spray deposition processes. In this chapter, the present state-of-the-art of this field is reviewed with emphasis on the various types of reactors proposed for this emerging technology. Only applications which attracted particular attention, namely diamond and high T c superconducting film deposition, are discussed in greater detail. (orig.)

Modelling of the energy density deposition profiles of ultrashort laser pulses focused in optical media

International Nuclear Information System (INIS)

Vidal, F; Lavertu, P-L; Bigaouette, N; Moore, F; Brunette, I; Giguere, D; Kieffer, J-C; Olivie, G; Ozaki, T

2007-01-01

The propagation of ultrashort laser pulses in dense optical media is investigated theoretically by solving numerically the nonlinear Schroedinger equation. It is shown that the maximum energy density deposition as a function of the pulse energy presents a well-defined threshold that increases with the pulse duration. As a consequence of plasma defocusing, the maximum energy density deposition is generally smaller and the size of the energy deposition zone is generally larger for shorter pulses. Nevertheless, significant values of the energy density deposition can be obtained near threshold, i.e., at lower energy than for longer pulses

Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

Energy Technology Data Exchange (ETDEWEB)

Suh, Sungin; Kim, Jun-Rae; Kim, Seongkyung; Hwang, Cheol Seong; Kim, Hyeong Joon, E-mail: thinfilm@snu.ac.kr [Department of Materials Science and Engineering with Inter-University Semiconductor Research Center (ISRC), Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 08826 (Korea, Republic of); Ryu, Seung Wook, E-mail: tazryu78@gmail.com [Department of Electrical Engineering, Stanford University, Stanford, California 94305-2311 (United States); Cho, Seongjae [Department of Electronic Engineering and New Technology Component & Material Research Center (NCMRC), Gachon University, Seongnam-si, Gyeonggi-do 13120 (Korea, Republic of)

2016-01-15

It has not been an easy task to deposit SiN at low temperature by conventional plasma-enhanced atomic layer deposition (PE-ALD) since Si organic precursors generally have high activation energy for adsorption of the Si atoms on the Si-N networks. In this work, in order to achieve successful deposition of SiN film at low temperature, the plasma processing steps in the PE-ALD have been modified for easier activation of Si precursors. In this modification, the efficiency of chemisorption of Si precursor has been improved by additional plasma steps after purging of the Si precursor. As the result, the SiN films prepared by the modified PE-ALD processes demonstrated higher purity of Si and N atoms with unwanted impurities such as C and O having below 10 at. % and Si-rich films could be formed consequently. Also, a very high step coverage ratio of 97% was obtained. Furthermore, the process-optimized SiN film showed a permissible charge-trapping capability with a wide memory window of 3.1 V when a capacitor structure was fabricated and measured with an insertion of the SiN film as the charge-trap layer. The modified PE-ALD process using the activated Si precursor would be one of the most practical and promising solutions for SiN deposition with lower thermal budget and higher cost-effectiveness.

Silicon oxide barrier films deposited on PET foils in pulsed plasmas: influence of substrate bias on deposition process and film properties

International Nuclear Information System (INIS)

Steves, S; Bibinov, N; Awakowicz, P; Ozkaya, B; Liu, C-N; Ozcan, O; Grundmeier, G

2013-01-01

A widely used plastic for packaging, polyethylene terephtalate (PET) offers limited barrier properties against gas permeation. For many applications of PET (from food packaging to micro electronics) improved barrier properties are essential. A silicon oxide barrier coating of PET foils is applied by means of a pulsed microwave driven low-pressure plasma. While the adjustment of the microwave power allows for a control of the ion production during the plasma pulse, a substrate bias controls the energy of ions impinging on the substrate. Detailed analysis of deposited films applying oxygen permeation measurements, x-ray photoelectron spectroscopy and atomic force microscopy are correlated with results from plasma diagnostics describing the deposition process. The influence of a change in process parameters such as gas mixture and substrate bias on the gas temperature, electron density, mean electron energy, ion energy and the atomic oxygen density is studied. An additional substrate bias results in an increase in atomic oxygen density up to a factor of 6, although plasma parameter such as electron density of n e = 3.8 ± 0.8 × 10 17 m −3 and electron temperature of k B T e = 1.7 ± 0.1 eV are unmodified. It is shown that atomic oxygen densities measured during deposition process higher than n O = 1.8 × 10 21 m −3 yield in barrier films with a barrier improvement factor up to 150. Good barrier films are highly cross-linked and show a smooth morphology. (paper)

Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

NARCIS (Netherlands)

Profijt, H. B.; M. C. M. van de Sanden,; Kessele, W. M. M.

2013-01-01

Two substrate-biasing techniques, i.e., substrate-tuned biasing and RF biasing, have been implemented in a remote plasma configuration, enabling control of the ion energy during plasma-assisted atomic layer deposition (ALD). With both techniques, substrate bias voltages up to -200 V have been

Surface modification of biomaterials by pulsed laser ablation deposition and plasma/gamma polymerization

Science.gov (United States)

Rau, Kaustubh R.

Surface modification of stainless-steel was carried out by two different methods: pulsed laser ablation deposition (PLAD) and a combined plasma/gamma process. A potential application was the surface modification of endovascular stents, to enhance biocompatibility. The pulsed laser ablation deposition process, had not been previously reported for modifying stents and represented a unique and potentially important method for surface modification of biomaterials. Polydimethylsiloxane (PDMS) elatomer was studied using the PLAD technique. Cross- linked PDMS was deemed important because of its general use for biomedical implants and devices as well as in other fields. Furthermore, PDMS deposition using PLAD had not been previously studied and any information gained on its ablation characteristics could be important scientifically and technologically. The studies reported here showed that the deposited silicone film properties had a dependence on the laser energy density incident on the target. Smooth, hydrophobic, silicone-like films were deposited at low energy densities (100-150 mJ/cm2). At high energy densities (>200 mJ/cm2), the films had an higher oxygen content than PDMS, were hydrophilic and tended to show a more particulate morphology. It was also determined that (1)the deposited films were stable and extremely adherent to the substrate, (2)silicone deposition exhibited an `incubation effect' which led to the film properties changing with laser pulse number and (3)films deposited under high vacuum were similar to films deposited at low vacuum levels. The mechanical properties of the PLAD films were determined by nanomechanical measurements which are based on the Atomic Force Microscope (AFM). From these measurements, it was possible to determine the modulus of the films and also study their scratch resistance. Such measurement techniques represent a significant advance over current state-of-the-art thin film characterization methods. An empirical model for

Plasma-deposited hybrid silica membranes with a controlled retention of organic bridges

Energy Technology Data Exchange (ETDEWEB)

Ngamou, P.H.T.; Creatore, M. [Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands); Overbeek, J.P.; Kreiter, R.; Van Veen, H.M.; Vente, J.F. [ECN, Energy research Centre of the Netherlands, Petten (Netherlands); Wienk, I.M.; Cuperus, P.F. [SolSep BV, Apeldoorn (Netherlands)

2013-03-05

Hybrid organically bridged silica membranes are suitable for energy-efficient molecular separations under harsh industrial conditions. Such membranes can be useful in organic solvent nanofiltration if they can be deposited on flexible, porous and large area supports. Here, we report the proof of concept for applying an expanding thermal plasma to the synthesis of perm-selective hybrid silica films from an organically bridged monomer, 1,2-bis(triethoxysilyl)ethane. This membrane is the first in its class to be produced by plasma enhanced chemical vapor deposition. By tuning the plasma and process parameters, the organic bridging groups could be retained in the separating layer. This way, a defect free film could be made with pervaporation performances of an n-butanol-water mixture comparable with those of conventional ceramic supported membranes made by sol-gel technology (i.e. a water flux of [similar]1.8 kg m'-{sup 2} h{sup -1}, a water concentration in the permeate higher than 98% and a separation factor of >1100). The obtained results show the suitability of expanding thermal plasma as a technology for the deposition of hybrid silica membranes for molecular separations.

Deposition of polymeric perfluored thin films in proton ionic membranes by plasma processes

International Nuclear Information System (INIS)

Polak, Peter Lubomir; Mousinho, Ana Paula; Ordonez, Nelson; Silva Zambom, Luis da; Mansano, Ronaldo Domingues

2007-01-01

In this work the surfaces of polymeric membranes based on Nafion (proton conducting material), used in proton exchange membranes fuel cells (PEMFC) had been modified by plasma deposition of perfluored polymers, in order to improve its functioning in systems of energy generation (fuel cells). The deposition increases the chemical resistance of the proton ionic polymers without losing the electrical properties. The processing of the membranes also reduces the permeability of the membranes to the alcohols (methanol and ethanol), thus preventing poisoning of the fuel cell. The processing of the membranes of Nafion was carried through in a system of plasma deposition using a mixture of CF 4 and H 2 gases. The plasma processing was made mainly to increase the chemical resistance and result in hydrophobic surfaces. The Fourier transformed infrared (FTIR) technique supplies a spectrum with information about the CF n bond formation. Through the Rutherford back scattering (RBS) technique it was possible to verify the deposition rate of the polymeric layer. The plasma process with composition of 60% of CF 4 and 40% of H 2 presented the best deposition rate. By the spectrum analysis for the optimized configuration, it was possible to verify that the film deposition occurred with a thickness of 90 nm, and fluorine concentration was nearly 30%. Voltammetry made possible to verify that the fluorination increases the membranes chemical resistance, improving the stability of Nafion, becoming an attractive process for construction of fuel cells

Neutral-beam deposition in large, finite-beta noncircular tokamak plasmas

International Nuclear Information System (INIS)

Wieland, R.M.; Houlberg, W.A.

1982-02-01

A parametric pencil beam model is introduced for describing the attenuation of an energetic neutral beam moving through a tokamak plasma. The nonnegligible effects of a finite beam cross section and noncircular shifted plasma cross sections are accounted for in a simple way by using a smoothing algorithm dependent linearly on beam radius and by including information on the plasma flux surface geometry explicitly. The model is benchmarked against more complete and more time-consuming two-dimensional Monte Carlo calculations for the case of a large D-shaped tokamak plasma with minor radius a = 120 cm and elongation b/a = 1.6. Deposition profiles are compared for deuterium beam energies of 120 to 150 keV, central plasma densities of 8 x 10 13 - 2 x 10 14 cm -3 , and beam orientation ranging from perpendicular to tangential to the inside wall

Plasma and process characterization of high power magnetron physical vapor deposition with integrated plasma equipment--feature profile model

International Nuclear Information System (INIS)

Zhang Da; Stout, Phillip J.; Ventzek, Peter L.G.

2003-01-01

total metal flux to the wafer increases with target power due to enhanced target sputtering. However, the ionization fraction of the total flux decreases due in part to the increased diffusion loss of charged species. Wafer bias power controls ion energy, and it has a negligible impact on plasma ionization and deposition flux composition. Feature simulations show the redistribution of deposited metals within a feature when wafer resputtering is promoted at sufficient bias power. Target-wafer spacing (TWS) impacts the total ionization and metal flux to the wafer. The Ar + density and deposition rate decrease with increasing TWS due to increased surface loss. Simulations suggest that reducing the TWS results in more efficient usage of target source

Energy Conversion in Imploding Z-Pinch Plasma

International Nuclear Information System (INIS)

Fisher, V.I.; Gregorian, L.; Davara, G.; Kroupp, E.; Bernshtam, V.A.; Ralchenko, Yu. V.; Starobinets, A.; Maron, Y.

2002-01-01

Due to important applications, Z-pinches became a subject of extensive studies. In these studies, main attention is directed towards improvement in efficiency of electric energy conversion into high-power radiation burst. At present, knowledge available on physics of Z-pinch operation, plasma motion, atomic kinetics, and energy conversion is mainly knowledge of numerical simulation results. We believe further progress require (i) experimental determination of spatial distribution and time history of thermodynamic parameters and magnetic field, as well as (ii) utilization of this data for experiment-based calculation of r,t-distribution of driving forces, mass and energy fluxes, and local energy deposition rates due to each of contributing mechanisms, what provides an insight into a process of conversion of stored electric energy into radiation burst. Moreover, experimentally determined r, t-distribution of parameters may serve for verification of computer programs developed for simulation of Z-pinch operation and optimization of radiation output. Within this research program we performed detailed spectroscopic study of plasmas imploding in modest-size (25 kV, 5 kJ, 1.2 μs quaterperiod) gas-puff Z-pinch. This facility has reasonably high repetition rate and provides good reproducibility of results. Consistent with plasma ionization degree in the implosion period, measurements are performed in UV-visible spectral range. Observation of spectral lines emitted at various azimuthal angles f showed no dependence on f. Dependence on axial coordinate z is found to be weak in near-anode half of the anode-cathode gap. Based on these observations and restricting the measurements to near-anode half of the gap, an evolution of parameters is studied in time and radial coordinate r only. In present talk we report on determination of radial component of plasma hydrodynamic velocity u r (r,t), magnetic field B ζ (r,t), electron density n e (r,t), density of ions in various

Plasma-based ion implantation and deposition: A review of physics,technology, and applications

Energy Technology Data Exchange (ETDEWEB)

Pelletier, Jacques; Anders, Andre

2005-05-16

After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes used of PBII&D to produce surgical implants, bio- and blood-compatible surfaces and coatings, etc. With limitations, also non-conducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few eV up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process non-flat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures. We use the acronym PBII&D when referring to both implantation and deposition, while PBIID implies that deposition is part of the process.

Modelling of diamond deposition microwave cavity generated plasmas

International Nuclear Information System (INIS)

Hassouni, K; Silva, F; Gicquel, A

2010-01-01

Some aspects of the numerical modelling of diamond deposition plasmas generated using microwave cavity systems are discussed. The paper mainly focuses on those models that allow (i) designing microwave cavities in order to optimize the power deposition in the discharge and (ii) estimating the detailed plasma composition in the vicinity of the substrate surface. The development of hydrogen plasma models that may be used for the self-consistent simulation of microwave cavity discharge is first discussed. The use of these models for determining the plasma configuration, composition and temperature is illustrated. Examples showing how to use these models in order to optimize the cavity structure and to obtain stable process operations are also given. A transport model for the highly reactive H 2 /CH 4 moderate pressure discharges is then presented. This model makes possible the determination of the time variation of plasma composition and temperature on a one-dimensional domain located on the plasma axis. The use of this model to analyse the transport phenomena and the chemical process in diamond deposition plasmas is illustrated. The model is also utilized to analyse pulsed mode discharges and the benefit they can bring as far as diamond growth rate and quality enhancement are concerned. We, in particular, show how the model can be employed to optimize the pulse waveform in order to improve the deposition process. Illustrations on how the model can give estimates of the species density at the growing substrate surface over a wide domain of deposition conditions are also given. This brings us to discuss the implication of the model prediction in terms of diamond growth rate and quality. (topical review)

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition

International Nuclear Information System (INIS)

Bollani, M; Fedorov, A; Chrastina, D; Sordan, R; Picco, A; Bonera, E

2010-01-01

Si 1-x Ge x islands grown on Si patterned substrates have received considerable attention during the last decade for potential applications in microelectronics and optoelectronics. In this work we propose a new methodology to grow Ge-rich islands using a chemical vapour deposition technique. Electron-beam lithography is used to pre-pattern Si substrates, creating material traps. Epitaxial deposition of thin Ge films by low-energy plasma-enhanced chemical vapour deposition then leads to the formation of Ge-rich Si 1-x Ge x islands (x > 0.8) with a homogeneous size distribution, precisely positioned with respect to the substrate pattern. The island morphology was characterized by atomic force microscopy, and the Ge content and strain in the islands was studied by μRaman spectroscopy. This characterization indicates a uniform distribution of islands with high Ge content and low strain: this suggests that the relatively high growth rate (0.1 nm s -1 ) and low temperature (650 deg. C) used is able to limit Si intermixing, while maintaining a long enough adatom diffusion length to prevent nucleation of islands outside pits. This offers the novel possibility of using these Ge-rich islands to induce strain in a Si cap.

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

Science.gov (United States)

Bollani, M; Chrastina, D; Fedorov, A; Sordan, R; Picco, A; Bonera, E

2010-11-26

Si(1-x)Ge(x) islands grown on Si patterned substrates have received considerable attention during the last decade for potential applications in microelectronics and optoelectronics. In this work we propose a new methodology to grow Ge-rich islands using a chemical vapour deposition technique. Electron-beam lithography is used to pre-pattern Si substrates, creating material traps. Epitaxial deposition of thin Ge films by low-energy plasma-enhanced chemical vapour deposition then leads to the formation of Ge-rich Si(1-x)Ge(x) islands (x > 0.8) with a homogeneous size distribution, precisely positioned with respect to the substrate pattern. The island morphology was characterized by atomic force microscopy, and the Ge content and strain in the islands was studied by μRaman spectroscopy. This characterization indicates a uniform distribution of islands with high Ge content and low strain: this suggests that the relatively high growth rate (0.1 nm s(-1)) and low temperature (650 °C) used is able to limit Si intermixing, while maintaining a long enough adatom diffusion length to prevent nucleation of islands outside pits. This offers the novel possibility of using these Ge-rich islands to induce strain in a Si cap.

Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

Energy Technology Data Exchange (ETDEWEB)

Romero, M F; Sanz, M M; Munoz, E [ISOM-Universidad Politecnica de Madrid (UPM). ETSIT, Madrid (Spain); Tanarro, I [Instituto de Estructura de la Materia, CSIC, Madrid (Spain); Jimenez, A, E-mail: itanarro@iem.cfmac.csic.e [Departamento Electronica, Escuela Politecnica Superior, Universidad de Alcala, Alcala de Henares, Madrid (Spain)

2010-12-15

In this work, silicon nitride thin films have been deposited by plasma enhanced chemical vapour deposition on both silicon samples and AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH{sub 4} and NH{sub 3} precursors and the formation of H{sub 2} and N{sub 2} have been analysed by mass spectrometry as a function of the NH{sub 3}/SiH{sub 4} flow ratio and the RF power applied to the plasma reactor. Afterwards, the properties of the films and the HEMT electrical characteristics have been studied. Plasma composition has been correlated with the SiN deposition rate, refractive index, H content and the final electric characteristics of the passivated transistors.

Reactive physical vapor deposition of TixAlyN: Integrated plasma-surface modeling characterization

International Nuclear Information System (INIS)

Zhang Da; Schaeffer, J.K.

2004-01-01

Reactive physical vapor deposition (RPVD) has been widely applied in the microelectronic industry for producing thin films. Fundamental understanding of RPVD mechanisms is needed for successful process development due to the high sensitivity of film properties on process conditions. An integrated plasma equipment-target nitridation modeling infrastructure for RPVD has therefore been developed to provide mechanistic insights and assist optimal process design. The target nitridation model computes target nitride coverage based on self-consistently derived plasma characteristics from the plasma equipment model; target sputter yields needed in the plasma equipment model are also self-consistently derived taking into account the yield-suppressing effect from nitridation. The integrated modeling infrastructure has been applied to investigating RPVD processing with a Ti 0.8 Al 0.2 compound target and an Ar/N 2 gas supply. It has been found that the process produces athermal metal neutrals as the primary deposition precursor. The metal stoichiometry in the deposited film is close to the target composition due to the predominance of athermal species in the flux that reaches the substrate. Correlations between process parameters (N 2 flow, target power), plasma characteristics, surface conditions, and deposition kinetics have been studied with the model. The deposition process is characterized by two regimes when the N 2 flow rate is varied. When N 2 is dilute relative to argon, target nitride coverage increases rapidly with increasing N 2 flow. The sputter yield and deposition rate consequently decrease. For less dilute N 2 mixtures, the sputter yield and deposition rate are stable due to the saturation of target nitridation. With increasing target power, the electron density increases nearly linearly while the variation of N generation is much smaller. Target nitridation and its suppression of the sputter yield saturate at high N 2 flow rendering these parameters

Gaseous material capacity of open plasma jet in plasma spray-physical vapor deposition process

Science.gov (United States)

Liu, Mei-Jun; Zhang, Meng; Zhang, Qiang; Yang, Guan-Jun; Li, Cheng-Xin; Li, Chang-Jiu

2018-01-01

Plasma spray-physical vapor deposition (PS-PVD) process, emerging as a highly efficient hybrid approach, is based on two powerful technologies of both plasma spray and physical vapor deposition. The maximum production rate is affected by the material feed rate apparently, but it is determined by the material vapor capacity of transporting plasma actually and essentially. In order to realize high production rate, the gaseous material capacity of plasma jet must be fundamentally understood. In this study, the thermal characteristics of plasma were measured by optical emission spectrometry. The results show that the open plasma jet is in the local thermal equilibrium due to a typical electron number density from 2.1 × 1015 to 3.1 × 1015 cm-3. In this condition, the temperature of gaseous zirconia can be equal to the plasma temperature. A model was developed to obtain the vapor pressure of gaseous ZrO2 molecules as a two dimensional map of jet axis and radial position corresponding to different average plasma temperatures. The overall gaseous material capacity of open plasma jet, take zirconia for example, was further established. This approach on evaluating material capacity in plasma jet would shed light on the process optimization towards both depositing columnar coating and a high production rate of PS-PVD.

Plasma deposited fluorinated films on porous membranes

Energy Technology Data Exchange (ETDEWEB)

Gancarz, Irena [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Bryjak, Marek, E-mail: marek.bryjak@pwr.edu.pl [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Kujawski, Jan; Wolska, Joanna [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Kujawa, Joanna; Kujawski, Wojciech [Nicolaus Copernicus University, Faculty of Chemistry, 7 Gagarina St., 87-100 Torun (Poland)

2015-02-01

75 KHz plasma was used to modify track etched poly(ethylene terephthalate) membranes and deposit on them flouropolymers. Two fluorine bearing monomers were used: perflourohexane and hexafluorobenzene. The modified surfaces were analyzed by means of attenuated total reflection infra-red spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy and wettability. It was detected that hexaflourobenxene deposited to the larger extent than perflourohaxane did. The roughness of surfaces decreased when more fluoropolymer was deposited. The hydrophobic character of surface slightly disappeared during 20-days storage of hexaflourobenzene modified membrane. Perfluorohexane modified membrane did not change its character within 120 days after modification. It was expected that this phenomenon resulted from post-reactions of oxygen with radicals in polymer deposits. The obtained membranes could be used for membrane distillation of juices. - Highlights: • Plasma deposited hydrophobic layer of flouropolymers. • Deposition degree affects the surface properties. • Hydrohilization of surface due to reaction of oxygen with entrapped radicals. • Possibility to use modified porous membrane for water distillation and apple juice concentration.

Plasma-assisted deposition of microcapsule containing Aloe vera extract for cosmeto-textiles

Science.gov (United States)

Nascimento do Carmo, S.; Zille, A.; Souto, A. P.

2017-10-01

Dielectric Barrier Discharge (DBD) atmospheric-pressure plasma was employed to enhance the deposition of commercial microcapsules (MCs) containing Aloe vera extract onto a cotton/polyester (50:50) fabric. DBD conditions were optimized in term of energy dosage and contact angle. The MCs were applied by padding and printing methods and the coatings were characterized in terms of SEM and FTIR. MCs display a spherical shape with size between 2 and 8 μm with an average wall thickness of 0.5 μm. The MCs applied by printing and pretreated with a plasma dosage of 1.6 kW m2 min-1 showed the best results with an increased adhesion of 200% and significant penetration of MCs into the fibres network. Plasma printed fabric retained 230% more MCs than untreated fabric after 10 washing cycles. However, the coating resistance between unwashed and washed samples was only improved by 5%. Considering the fact that no binder or crosslinking agents were used, the DBD plasma-assisted deposition of MCs revealed to be a promising environmental safe and low cost coating technology.

Fast Waves Mode Conversion and Energy Deposition in Simulated, Pre-Heated, Neoclassical, Tight Aspect Ratio Tokamak Plasmas

International Nuclear Information System (INIS)

Bruma, C.; Cuperman, S.; Komoshvili, K.

1999-01-01

Some basic aspects of wave-plasma interaction of interest for tight aspect ratio spherical tokamaks are investigated theoretically. The following scenario is considered: A. Fast magnetosonic waves are launched by an external antenna into a simulated spherical Tokamak plasma; these waves are converted to Alfven waves at points (layer) satisfying the Alfven resonance condition. B. The simulated spherical tokamaks-plasma has a circular cross-section and toroidicity effects are simulated by Grad-Shafranov type, radially dependent axial magnetic field and its shear. (J. Actual equilibrium profiles (magnetic field, pressure and current) observed in the low field side (LFS) of spherical tokamaks (viz., START at Culham, UK) are used. D. The study is based on the numerical solution of the full e.m. wave equation which includes a quite general resistive MHD dielectric tensor, with consideration of equilibrium current and neoclassical effects. Two kinds of results will be presented: I. Proofs validating the computational algorithm used and including convergence and energy conservation. II. Exact quantitative results concerning (i) the structure and space dependence of the mode-converted Alfven waves and (ii) the basic features of the deposited p over . The dependence of the results on the launched wave characteristics (wave numbers, frequency and intensity) as well as on those of the equilibrium plasma (equilibrium current, neoclassical resistivity and electron inertia) will be discussed

Iridium Coating Deposited by Double Glow Plasma Technique — Effect of Glow Plasma on Structure of Coating at Single Substrate Edge

International Nuclear Information System (INIS)

Wu Wangping; Chen Zhaofeng; Liu Yong

2012-01-01

Double glow plasma technique has a high deposition rate for preparing iridium coating. However, the glow plasma can influence the structure of the coating at the single substrate edge. In this study, the iridium coating was prepared by double glow plasma on the surface of single niobium substrate. The microstructure of iridium coating at the substrate edge was observed by scanning electron microscopy. The composition of the coating was confirmed by energy dispersive spectroscopy and X-ray diffraction. There was a boundary between the coating and the substrate edge. The covered area for the iridium coating at the substrate edge became fewer and fewer from the inner area to the outer flange-area. The bamboo sprout-like particles on the surface of the substrate edge were composed of elemental niobium. The substrate edge was composed of the Nb coating and there was a transition zone between the Ir coating and the Nb coating. The interesting phenomenon of the substrate edge could be attributed to the effects of the bias voltages and the plasma cloud in the deposition chamber. The substrate edge effect could be mitigated or eliminated by adding lots of small niobium plates around the substrate in a deposition process. (plasma technology)

Novel Prospects for Plasma Spray-Physical Vapor Deposition of Columnar Thermal Barrier Coatings

Science.gov (United States)

Anwaar, Aleem; Wei, Lianglinag; Guo, Qian; Zhang, Baopeng; Guo, Hongbo

2017-12-01

Plasma spray-physical vapor deposition (PS-PVD) is an emerging coating technique that can produce columnar thermal barrier coatings from vapor phase. Feedstock treatment at the start of its trajectory in the plasma torch nozzle is important for such vapor-phase deposition. This study describes the effects of the plasma composition (Ar/He) on the plasma characteristics, plasma-particle interaction, and particle dynamics at different points spatially distributed inside the plasma torch nozzle. The results of calculations show that increasing the fraction of argon in the plasma gas mixture enhances the momentum and heat flow between the plasma and injected feedstock. For the plasma gas combination of 45Ar/45He, the total enthalpy transferred to a representative powder particle inside the plasma torch nozzle is highest ( 9828 kJ/kg). Moreover, due to the properties of the plasma, the contribution of the cylindrical throat, i.e., from the feed injection point (FIP) to the start of divergence (SOD), to the total transferred energy is 69%. The carrier gas flow for different plasma gas mixtures was also investigated by optical emission spectroscopy (OES) measurements of zirconium emissions. Yttria-stabilized zirconia (YSZ) coating microstructures were produced when using selected plasma gas compositions and corresponding carrier gas flows; structural morphologies were found to be in good agreement with OES and theoretical predictions. Quasicolumnar microstructure was obtained with porosity of 15% when applying the plasma composition of 45Ar/45He.

Hydrogen plasma treatment of silicon dioxide for improved silane deposition.

Science.gov (United States)

Gupta, Vipul; Madaan, Nitesh; Jensen, David S; Kunzler, Shawn C; Linford, Matthew R

2013-03-19

We describe a method for plasma cleaning silicon surfaces in a commercial tool that removes adventitious organic contamination and enhances silane deposition. As shown by wetting, ellipsometry, and XPS, hydrogen, oxygen, and argon plasmas effectively clean Si/SiO2 surfaces. However, only hydrogen plasmas appear to enhance subsequent low-pressure chemical vapor deposition of silanes. Chemical differences between the surfaces were confirmed via (i) deposition of two different silanes: octyldimethylmethoxysilane and butyldimethylmethoxysilane, as evidenced by spectroscopic ellipsometry and wetting, and (ii) a principal components analysis (PCA) of TOF-SIMS data taken from the different plasma-treated surfaces. AFM shows no increase in surface roughness after H2 or O2 plasma treatment of Si/SiO2. The effects of surface treatment with H2/O2 plasmas in different gas ratios, which should allow greater control of surface chemistry, and the duration of the H2 plasma (complete surface treatment appeared to take place quickly) are also presented. We believe that this work is significant because of the importance of silanes as surface functionalization reagents, and in particular because of the increasing importance of gas phase silane deposition.

Diamond deposition using a planar radio frequency inductively coupled plasma

Science.gov (United States)

Bozeman, S. P.; Tucker, D. A.; Stoner, B. R.; Glass, J. T.; Hooke, W. M.

1995-06-01

A planar radio frequency inductively coupled plasma has been used to deposit diamond onto scratched silicon. This plasma source has been developed recently for use in large area semiconductor processing and holds promise as a method for scale up of diamond growth reactors. Deposition occurs in an annulus which coincides with the area of most intense optical emission from the plasma. Well-faceted diamond particles are produced when the substrate is immersed in the plasma.

Optimized plasma-deposited fluorocarbon coating for dry release and passivation of thin SU-8 cantilevers

DEFF Research Database (Denmark)

Keller, Stephan Urs; Häfliger, Daniel; Boisen, Anja

2008-01-01

during fluorocarbon deposition, the surface free energy of the coating can be tuned to allow for uniform wetting during spin coating of arbitrary thin SU-8 films. Further, they define an optimal pressure regime for the release of thin polymer structures at high yield. They demonstrate the successful......Plasma-deposited fluorocarbon coatings are introduced as a convenient method for the dry release of polymer structures. In this method, the passivation process in a deep reactive ion etch reactor was used to deposit hydrophobic fluorocarbon films. Standard photolithography with the negative epoxy......-based photoresist SU-8 was used to fabricate polymer structures such as cantilevers and membranes on top of the nonadhesive release layer. The authors identify the plasma density as the main parameter determining the surface properties of the deposited fluorocarbon films. They show that by modifying the pressure...

Plasma deposition of refractories

International Nuclear Information System (INIS)

Kudinov, V.V.; Ivanov, V.M.

1981-01-01

The problems of deposition, testing and application of plasma coating of refractory metals and oxides are considered. The process fundamentals, various manufacturing procedures and equipment for their realization are described in detail. Coating materials are given (Al, Mg, Al 2 O 3 , ZrO 2 , MgAlO 4 ) which are used in reactor engineering and their designated purposes are shown [ru

Plasma deposition of amorphous silicon-based materials

CERN Document Server

Bruno, Giovanni; Madan, Arun

1995-01-01

Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices.

Ultra-small platinum and gold nanoparticles by arc plasma deposition

International Nuclear Information System (INIS)

Kim, Sang Hoon; Jeong, Young Eun; Ha, Heonphil; Byun, Ji Young; Kim, Young Dok

2014-01-01

Highlights: • Ultra-small (<2 nm) and bigger platinum and gold nanoparticles were produced by arc plasma deposition (APD). • Size and coverage of deposited nanoparticles were easily controlled with APD parameters. • Crystalline structures of deposited nanoparticles emerged only when the particle size was bigger than ∼2 nm. - Abstract: Ultra-small (<2 nm) nanoparticles of platinum and gold were produced by arc plasma deposition (APD) in a systematic way and the deposition behavior was studied. Nanoparticles were deposited on two dimensional amorphous carbon and amorphous titania thin films and characterized by transmission electron microscopy (TEM). Deposition behavior of nanoparticles by APD was studied with discharge voltage (V), discharge condenser capacitance (C), and the number of plasma pulse shots (n) as controllable parameters. The average size of intrinsic nanoparticles generated by APD process was as small as 0.9 nm and deposited nanoparticles began to have crystal structures from the particle size of about 2 nm. V was the most sensitive parameter to control the size and coverage of generated nanoparticles compared to C and n. Size of APD deposited nanoparticles was also influenced by the nature of evaporating materials and substrates

Magnetic filtered plasma deposition and implantation technique

CERN Document Server

Zhang Hui Xing; Wu Xian Ying

2002-01-01

A high dense metal plasma can be produced by using cathodic vacuum arc discharge technique. The microparticles emitted from the cathode in the metal plasma can be removed when the metal plasma passes through the magnetic filter. It is a new technique for making high quality, fine and close thin films which have very widespread applications. The authors describe the applications of cathodic vacuum arc technique, and then a filtered plasma deposition and ion implantation system as well as its applications

Hydrogen diffusion between plasma-deposited silicon nitride-polyimide polymer interfaces

International Nuclear Information System (INIS)

Nguyen, S.V.; Kerbaugh, M.

1988-01-01

This paper reports a nuclear reaction analysis (NRA) for hydrogen technique used to analyze the hydrogen concentration near plasma enhanced chemical vapor deposition (PECVD) silicon nitride-polyimide interfaces at various nitride-deposition and polyimide-polymer-curing temperatures. The CF 4 + O 2 (8% O 2 ) plasma-etch-rate variation of PECVD silicon nitride films deposited on polyimide appeared to correlate well with the variation of hydrogen-depth profiles in the nitride films. The NRA data indicate that hydrogen-depth-profile fluctuation in the nitride films is due to hydrogen diffusion between the nitride-polyimide interfaces during deposition. Annealing treatment of polyimide films in a hydrogen atmosphere prior to the nitride film deposition tends to enhance the hydrogen-depth-profile uniformity in the nitride films, and thus substantially reduces or eliminates variation in the nitride plasma-etch rate

Hydrogen and helium trapping in tungsten deposition layers formed by RF plasma sputtering

International Nuclear Information System (INIS)

Kazunari Katayama; Kazumi Imaoka; Takayuki Okamura; Masabumi Nishikawa

2006-01-01

Understanding of tritium behavior in plasma facing materials is an important issue for fusion reactor from viewpoints of fuel control and radiation safety. Tungsten is used as a plasma facing material in the divertor region of ITER. However, investigation of hydrogen isotope behavior in tungsten deposition layer is not sufficient so far. It is also necessary to evaluate an effect of helium on a formation of deposition layer and an accumulation of hydrogen isotopes because helium generated by fusion reaction exists in fusion plasma. In this study, tungsten deposition layers were formed by sputtering method using hydrogen and helium RF plasma. An erosion rate and a deposition rate of tungsten were estimated by weight measurement. Hydrogen and helium retention were investigated by thermal desorption method. Tungsten deposition was performed using a capacitively-coupled RF plasma device equipped with parallel-plate electrodes. A tungsten target was mounted on one electrode which is supplied with RF power at 200 W. Tungsten substrates were mounted on the other electrode which is at ground potential. The plasma discharge was continued for 120 hours where pressure of hydrogen or helium was controlled to be 10 Pa. The amounts of hydrogen and helium released from deposition layers was quantified by a gas chromatograph. The erosion rate of target tungsten under helium plasma was estimated to be 1.8 times larger than that under hydrogen plasma. The deposition rate on tungsten substrate under helium plasma was estimated to be 4.1 times larger than that under hydrogen plasma. Atomic ratio of hydrogen to tungsten in a deposition layer formed by hydrogen plasma was estimated to be 0.17 by heating to 600 o C. From a deposition layer formed by helium plasma, not only helium but also hydrogen was released by heating to 500 o C. Atomic ratios of helium and hydrogen to tungsten were estimated to be 0.080 and 0.075, respectively. The trapped hydrogen is probably impurity hydrogen

Investigation and application of microwave electron cyclotron resonance plasma physical vapour deposition

International Nuclear Information System (INIS)

Ren Zhaoxing; Sheng Yanya; Shi Yicai; Wen Haihu; Cao Xiaowen

1991-06-01

The evaporating deposition of Ti film and Cu film by using microwave electron cyclotron resonance (ECR) technique was investigated. It deposition rate was about 50 nm/min and the temperature of the substrate was 50∼150 deg C. The thin amorphous films with strong adherent force were obtained. The sputtering deposition with ECR plasma was studied by employing higher plasma density and ionicity and negative substrate potential to make YBaCuO superconducting film. Its film was compact and amorphous with a thickness of 1.0 μm and the deposition rate was about 10 nm/min. The results show that this technique can initiate a high density and high ionicity plasma at lower gas pressure (10 -2 ∼10 -3 Pa). This plasma is the most suitable plasma source in thin film deposition process and surface treatment technique

Solid oxide fuel cell electrolytes produced via very low pressure suspension plasma spray and electrophoretic deposition

Science.gov (United States)

Fleetwood, James D.

Solid oxide fuel cells (SOFCs) are a promising element of comprehensive energy policies due to their direct mechanism for converting the oxidization of fuel, such as hydrogen, into electrical energy. Both very low pressure plasma spray and electrophoretic deposition allow working with high melting temperature SOFC suspension based feedstock on complex surfaces, such as in non-planar SOFC designs. Dense, thin electrolytes of ideal composition for SOFCs can be fabricated with each of these processes, while compositional control is achieved with dissolved dopant compounds that are incorporated into the coating during deposition. In the work reported, sub-micron 8 mole % Y2O3-ZrO2 (YSZ) and gadolinia-doped ceria (GDC), powders, including those in suspension with scandium-nitrate dopants, were deposited on NiO-YSZ anodes, via very low pressure suspension plasma spray (VLPSPS) at Sandia National Laboratories' Thermal Spray Research Laboratory and electrophoretic deposition (EPD) at Purdue University. Plasma spray was carried out in a chamber held at 320 - 1300 Pa, with the plasma composed of argon, hydrogen, and helium. EPD was characterized utilizing constant current deposition at 10 mm electrode separation, with deposits sintered from 1300 -- 1500 °C for 2 hours. The role of suspension constituents in EPD was analyzed based on a parametric study of powder loading, powder specific surface area, polyvinyl butyral (PVB) content, polyethyleneimine (PEI) content, and acetic acid content. Increasing PVB content and reduction of particle specific surface area were found to eliminate the formation of cracks when drying. PEI and acetic acid content were used to control suspension stability and the adhesion of deposits. Additionally, EPD was used to fabricate YSZ/GDC bilayer electrolyte systems. The resultant YSZ electrolytes were 2-27 microns thick and up to 97% dense. Electrolyte performance as part of a SOFC system with screen printed LSCF cathodes was evaluated with peak

Power deposition to the pump limiters in Tore-Supra with ohmic plasmas

International Nuclear Information System (INIS)

Guilhem, D.; Chatelier, M.; Chappuis Fleury, I.; Klepper, C.

1990-01-01

The modification of power scrape-off-length, λq, and power deposition are studied both with the horizontal limiter alone and with the full set of 7 pump limiters for 1MW ohmic plasmas in TORE-SUPRA. By making spatially resolved infrared surface temperature measurements during the plasma discharge, the magnitude and distribution of the energy flux can be derived. For comparison, the surface temperature of the horizontal pump limiter is calculated with a finite element code using a 3D description of the field lines, an exponential scrape-off-layer, and the pump limiter geometry. From comparison of the infrared images of the limiter we derived that the λq for power deposition was slightly less than 9 mm (±1mm) which is in agreement with the predicted design value of 10 mm. For an 8 seconds discharge, the maximum surface temperature on the horizontal limiter is 450 0 C. Inserting the 7 limiters does not modify λq (which becomes 10 mm). The power is shared by all the limiters and the maximum surface temperature on the horizontal limiter decreased to 320 0 C. These λq values have been independently measured by the integrated energy deposition on the horizontal limiter and other internal structures 5 cm into the scrape-off layer. These values agree with the infrared measurements in the two cases

Wettability of modified silica layers deposited on glass support activated by plasma

Energy Technology Data Exchange (ETDEWEB)

Terpiłowski, Konrad, E-mail: terpil@umcs.pl [Department of Physical Chemistry – Interfacial Phenomena, Faculty of Chemistry, Maria Curie-Sklodowska University, Lublin (Poland); Rymuszka, Diana [Department of Physical Chemistry – Interfacial Phenomena, Faculty of Chemistry, Maria Curie-Sklodowska University, Lublin (Poland); Goncharuk, Olena V.; Sulym, Iryna Ya.; Gun’ko, Vladimir M. [Chuiko Institute of Surface Chemistry, National Academy of Science of Ukraine, Kiev (Ukraine)

2015-10-30

Highlights: • New modified silica materials synthesis. • Support surface plasma activation. • Apparent surface free energy determination. • Equilibrium contact angle calculation. - Abstract: Fumed silica modified by hexamethyldisilazane [HDMS] and polydimethylsiloxane [PDMS] was dispersed in a polystyrene/chloroform solution. To increase adhesion between deposited silica layers and a glass surface, the latter was pretreated with air plasma for 30 s. The silica/polystyrene dispersion was deposited on the glass support using a spin coater. After deposition, the plates were dried in a desiccator for 24 h. Water advancing and receding contact angles were measured using the tilted plate method. The apparent surface free energy (γ{sub S}) was evaluated using the contact angle hysteresis approach. The surface topography was determined using the optical profilometry method. Contact angles changed from 59.7° ± 4.4 (at surface coverage with trimethylsilyl groups Θ = 0.14) to 155° ± 3.1 at Θ = 1. The value of γ{sub S} decreased from 51.3 ± 2.8 mJ/m{sup 2} (for the sample at the lowest value of Θ) to 1.0 ± 0.4 mJ/m{sup 2} for the most hydrophobic sample. Thus, some systems with a high degree of modification by HDMS showed superhydrophobicity, and the sliding angle amounted to about 16° ± 2.1.

Thin polymer films prepared by plasma immersion ion implantation and deposition

International Nuclear Information System (INIS)

Rangel, Elidiane C.; Silva, Paulo A.F.; Mota, Rogerio P.; Schreiner, Wido H.; Cruz, Nilson C.

2005-01-01

This work describes an investigation of the properties of polymer films prepared by plasma immersion ion implantation and deposition. Films were synthesized from low pressure benzene glow discharges, biasing the samples with 25 kV negative pulses. The total energy deposited in the growing layer was varied tailoring simultaneously pulse frequency and duty cycle. The effect of the pulse characteristics on the chemical composition and mechanical properties of the films was studied by X-ray photoelectron spectroscopy (XPS) and nanoindentation, respectively. Analysis of the deconvoluted C 1s XPS peaks demonstrated that oxygen was incorporated in all the samples. The chemical modifications induced structural reorganization, characterized by chain cross-linking and unsaturation, affecting material properties. Hardness and plastic resistance parameter increased under certain bombardment conditions. An interpretation is proposed in terms of the total energy delivered to the growing layer

Topographic, optical and chemical properties of zinc particle coatings deposited by means of atmospheric pressure plasma

Science.gov (United States)

Wallenhorst, L. M.; Loewenthal, L.; Avramidis, G.; Gerhard, C.; Militz, H.; Ohms, G.; Viöl, W.

2017-07-01

In this research, topographic, optical and chemical properties of zinc oxide layers deposited by a cold plasma-spray process were measured. Here, zinc micro particles were fed to the afterglow of a plasma spark discharge whereas the substrates were placed in a quite cold zone of the effluent plasma jet. In this vein, almost closed layers were realised on different samples. As ascertained by laser scanning and atomic force microscopic measurements the particle size of the basic layer is in the nanometre scale. Additionally, larger particles and agglomerates were found on its top. The results indicate a partial plasma-induced diminishment of the initial particles, most probably due to melting or vaporisation. It is further shown that the plasma gives rise to an increased oxidation of such particles as confirmed by X-ray photoelectron spectroscopy. Quantitative analysis of the resulting mixed layer was performed. It is shown that the deposited layers consist of zinc oxide and elemental zinc in approximately equal shares. In addition, the layer's band gap energy was determined by spectroscopic analysis. Here, considerable UV blocking properties of the deposited layers were observed. Possible underlying effects as well as potential applications are presented.

Plasma sprayed and electrospark deposited zirconium metal diffusion barrier coatings

International Nuclear Information System (INIS)

Hollis, Kendall J.; Pena, Maria I.

2010-01-01

Zirconium metal coatings applied by plasma spraying and electrospark deposition (ESD) have been investigated for use as diffusion barrier coatings on low enrichment uranium fuel for research nuclear reactors. The coatings have been applied to both stainless steel as a surrogate and to simulated nuclear fuel uranium-molybdenum alloy substrates. Deposition parameter development accompanied by coating characterization has been performed. The structure of the plasma sprayed coating was shown to vary with transferred arc current during deposition. The structure of ESD coatings was shown to vary with the capacitance of the deposition equipment.

Ion energy loss at maximum stopping power in a laser-generated plasma

International Nuclear Information System (INIS)

Cayzac, W.

2013-01-01

In the frame of this thesis, a new experimental setup for the measurement of the energy loss of carbon ions at maximum stopping power in a hot laser-generated plasma has been developed and successfully tested. In this parameter range where the projectile velocity is of the same order of magnitude as the thermal velocity of the plasma free electrons, large uncertainties of up to 50% are present in the stopping-power description. To date, no experimental data are available to perform a theory benchmarking. Testing the different stopping theories is yet essential for inertial confinement fusion and in particular for the understanding of the alpha-particle heating of the thermonuclear fuel. Here, for the first time, precise measurements were carried out in a reproducible and entirely characterized beam-plasma configuration. It involved a nearly fully-stripped ion beam probing a homogeneous fully-ionized plasma. This plasma was generated by irradiating a thin carbon foil with two high-energy laser beams and features a maximum electron temperature of 200 eV. The plasma conditions were simulated with a two-dimensional radiative hydrodynamic code, while the ion-beam charge-state distribution was predicted by means of a Monte-Carlo code describing the charge-exchange processes of projectile ions in plasma. To probe at maximum stopping power, high-frequency pulsed ion bunches were decelerated to an energy of 0.5 MeV per nucleon. The ion energy loss was determined by a time-of-flight measurement using a specifically developed chemical-vapor-deposition diamond detector that was screened against any plasma radiation. A first experimental campaign was carried out using this newly developed platform, in which a precision better than 200 keV on the energy loss was reached. This allowed, via the knowledge of the plasma and of the beam parameters, to reliably test several stopping theories, either based on perturbation theory or on a nonlinear T-Matrix formalism. A preliminary

Deposition Rate and Energy Enhancements of TiN Thin-Film in a Magnetized Sheet Plasma Source

OpenAIRE

Hamdi Muhyuddin D. Barra; Henry J. Ramos

2011-01-01

Titanium nitride (TiN) has been synthesized using the sheet plasma negative ion source (SPNIS). The parameters used for its effective synthesis has been determined from previous experiments and studies. In this study, further enhancement of the deposition rate of TiN synthesis and advancement of the SPNIS operation is presented. This is primarily achieved by the addition of Sm-Co permanent magnets and a modification of the configuration in the TiN deposition process. The ...

Enhanced surface functionality via plasma modification and plasma deposition techniques to create more biologically relevant materials

Science.gov (United States)

Shearer, Jeffrey C.

Functionalizing nanoparticles and other unusually shaped substrates to create more biologically relevant materials has become central to a wide range of research programs. One of the primary challenges in this field is creating highly functionalized surfaces without modifying the underlying bulk material. Traditional wet chemistry techniques utilize thin film depositions to functionalize nanomaterials with oxygen and nitrogen containing functional groups, such as --OH and --NHx. These functional groups can serve to create surfaces that are amenable to cell adhesion or can act as reactive groups for further attachment of larger structures, such as macromolecules or antiviral agents. Additional layers, such as SiO2, are often added between the nanomaterial and the functionalized coating to act as a barrier films, adhesion layers, and to increase overall hydrophilicity. However, some wet chemistry techniques can damage the bulk material during processing. This dissertation examines the use of plasma processing as an alternative method for producing these highly functionalized surfaces on nanoparticles and polymeric scaffolds through the use of plasma modification and plasma enhanced chemical vapor deposition techniques. Specifically, this dissertation will focus on (1) plasma deposition of SiO2 barrier films on nanoparticle substrates; (2) surface functionalization of amine and alcohol groups through (a) plasma co-polymerization and (b) plasma modification; and (3) the design and construction of plasma hardware to facilitate plasma processing of nanoparticles and polymeric scaffolds. The body of work presented herein first examines the fabrication of composite nanoparticles by plasma processing. SiOxC y and hexylamine films were coated onto TiO2 nanoparticles to demonstrate enhanced water dispersion properties. Continuous wave and pulsed allyl alcohol plasmas were used to produce highly functionalized Fe2 O3 supported nanoparticles. Specifically, film composition was

Pressure dependence of morphology and phase composition of SiC films deposited by microwave plasma chemical vapor deposition on cemented carbide substrates

Energy Technology Data Exchange (ETDEWEB)

Yu Shengwang, E-mail: bkdysw@yahoo.cn; Fan Pengwei; Tang Weizhong; Li Xiaojing; Hu Haolin; Hei Hongjun; Zhang Sikai; Lu Fanxiu

2011-11-01

SiC films were deposited on cemented carbide substrates by employing microwave plasma chemical vapor deposition method using tetramethylsilane (Si(CH{sub 3}){sub 4}) diluted in H{sub 2} as the precursor. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and scratching technique were used to characterize morphology, composition, phases present and adhesion of the films. Experimental results show that the deposition pressure has great influence on morphologies and phase composition of the films. In sequence, SiC films with a cauliflower-like microstructure, granular films with terrace-featured SiC particles coexisting with Co{sub 2}Si compound and clusters of nanometer SiC nanoplatelets appear as a function of the deposition pressure. In terms of plasma density and substrate temperature, this sequential appearance of microstructures of SiC films was explained. Adhesion tests showed that among the three types of films studied, the films with the terrace-featured SiC particles have relatively higher adhesion. Such knowledge will be of importance when the SiC films are used as interlayer between diamond films and cemented carbide substrates.

Pressure dependence of morphology and phase composition of SiC films deposited by microwave plasma chemical vapor deposition on cemented carbide substrates

International Nuclear Information System (INIS)

Yu Shengwang; Fan Pengwei; Tang Weizhong; Li Xiaojing; Hu Haolin; Hei Hongjun; Zhang Sikai; Lu Fanxiu

2011-01-01

SiC films were deposited on cemented carbide substrates by employing microwave plasma chemical vapor deposition method using tetramethylsilane (Si(CH 3 ) 4 ) diluted in H 2 as the precursor. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and scratching technique were used to characterize morphology, composition, phases present and adhesion of the films. Experimental results show that the deposition pressure has great influence on morphologies and phase composition of the films. In sequence, SiC films with a cauliflower-like microstructure, granular films with terrace-featured SiC particles coexisting with Co 2 Si compound and clusters of nanometer SiC nanoplatelets appear as a function of the deposition pressure. In terms of plasma density and substrate temperature, this sequential appearance of microstructures of SiC films was explained. Adhesion tests showed that among the three types of films studied, the films with the terrace-featured SiC particles have relatively higher adhesion. Such knowledge will be of importance when the SiC films are used as interlayer between diamond films and cemented carbide substrates.

Evaporation of Droplets in Plasma Spray-Physical Vapor Deposition Based on Energy Compensation Between Self-Cooling and Plasma Heat Transfer

Science.gov (United States)

Liu, Mei-Jun; Zhang, Meng; Zhang, Qiang; Yang, Guan-Jun; Li, Cheng-Xin; Li, Chang-Jiu

2017-10-01

In the plasma spray-physical vapor deposition process (PS-PVD), there is no obvious heating to the feedstock powders due to the free molecular flow condition of the open plasma jet. However, this is in contrast to recent experiments in which the molten droplets are transformed into vapor atoms in the open plasma jet. In this work, to better understand the heating process of feedstock powders in the open plasma jet of PS-PVD, an evaporation model of molten ZrO2 is established by examining the heat and mass transfer process of molten ZrO2. The results reveal that the heat flux in PS-PVD open plasma jet (about 106 W/m2) is smaller than that in the plasma torch nozzle (about 108 W/m2). However, the flying distance of molten ZrO2 in the open plasma jet is much longer than that in the plasma torch nozzle, so the heating in the open plasma jet cannot be ignored. The results of the evaporation model show that the molten ZrO2 can be partly evaporated by self-cooling, whereas the molten ZrO2 with a diameter <0.28 μm and an initial temperature of 3247 K can be completely evaporated within the axial distance of 450 mm by heat transfer.

Topographic, optical and chemical properties of zinc particle coatings deposited by means of atmospheric pressure plasma

International Nuclear Information System (INIS)

Wallenhorst, L.M.; Loewenthal, L.; Avramidis, G.; Gerhard, C.; Militz, H.; Ohms, G.; Viöl, W.

2017-01-01

Highlights: • Zn/ZnO mixed systems were deposited from elemental zinc by a cold plasma-spray process. • Oxidation was confirmed by XPS. • The coatings exhibited a strong absorption in the UV spectral range, thus being suitable as protective layers, e.g. on thermosensitive materials. - Abstract: In this research, topographic, optical and chemical properties of zinc oxide layers deposited by a cold plasma-spray process were measured. Here, zinc micro particles were fed to the afterglow of a plasma spark discharge whereas the substrates were placed in a quite cold zone of the effluent plasma jet. In this vein, almost closed layers were realised on different samples. As ascertained by laser scanning and atomic force microscopic measurements the particle size of the basic layer is in the nanometre scale. Additionally, larger particles and agglomerates were found on its top. The results indicate a partial plasma-induced diminishment of the initial particles, most probably due to melting or vaporisation. It is further shown that the plasma gives rise to an increased oxidation of such particles as confirmed by X-ray photoelectron spectroscopy. Quantitative analysis of the resulting mixed layer was performed. It is shown that the deposited layers consist of zinc oxide and elemental zinc in approximately equal shares. In addition, the layer's band gap energy was determined by spectroscopic analysis. Here, considerable UV blocking properties of the deposited layers were observed. Possible underlying effects as well as potential applications are presented.

Topographic, optical and chemical properties of zinc particle coatings deposited by means of atmospheric pressure plasma

Energy Technology Data Exchange (ETDEWEB)

Wallenhorst, L.M., E-mail: lena.wallenhorst@hawk-hhg.de [University of Applied Sciences and Arts, Laboratory of Laser and Plasma Technologies, Von-Ossietzky-Str. 99, 37085 Göttingen (Germany); Loewenthal, L.; Avramidis, G. [University of Applied Sciences and Arts, Laboratory of Laser and Plasma Technologies, Von-Ossietzky-Str. 99, 37085 Göttingen (Germany); Gerhard, C. [University of Applied Sciences and Arts, Laboratory of Laser and Plasma Technologies, Von-Ossietzky-Str. 99, 37085 Göttingen (Germany); Fraunhofer Institute for Surface Engineering and Thin Films, Application Center for Plasma and Photonics, Von-Ossietzky-Str. 100, 37085 Göttingen (Germany); Militz, H. [Wood Biology and Wood Products, Burckhardt Institute, Georg-August-University Göttingen, Büsgenweg 4, 37077 Göttingen (Germany); Ohms, G. [University of Applied Sciences and Arts, Laboratory of Laser and Plasma Technologies, Von-Ossietzky-Str. 99, 37085 Göttingen (Germany); Viöl, W. [University of Applied Sciences and Arts, Laboratory of Laser and Plasma Technologies, Von-Ossietzky-Str. 99, 37085 Göttingen (Germany); Fraunhofer Institute for Surface Engineering and Thin Films, Application Center for Plasma and Photonics, Von-Ossietzky-Str. 100, 37085 Göttingen (Germany)

2017-07-15

Highlights: • Zn/ZnO mixed systems were deposited from elemental zinc by a cold plasma-spray process. • Oxidation was confirmed by XPS. • The coatings exhibited a strong absorption in the UV spectral range, thus being suitable as protective layers, e.g. on thermosensitive materials. - Abstract: In this research, topographic, optical and chemical properties of zinc oxide layers deposited by a cold plasma-spray process were measured. Here, zinc micro particles were fed to the afterglow of a plasma spark discharge whereas the substrates were placed in a quite cold zone of the effluent plasma jet. In this vein, almost closed layers were realised on different samples. As ascertained by laser scanning and atomic force microscopic measurements the particle size of the basic layer is in the nanometre scale. Additionally, larger particles and agglomerates were found on its top. The results indicate a partial plasma-induced diminishment of the initial particles, most probably due to melting or vaporisation. It is further shown that the plasma gives rise to an increased oxidation of such particles as confirmed by X-ray photoelectron spectroscopy. Quantitative analysis of the resulting mixed layer was performed. It is shown that the deposited layers consist of zinc oxide and elemental zinc in approximately equal shares. In addition, the layer's band gap energy was determined by spectroscopic analysis. Here, considerable UV blocking properties of the deposited layers were observed. Possible underlying effects as well as potential applications are presented.

Local thermodynamic equilibrium in rapidly heated high energy density plasmas

International Nuclear Information System (INIS)

Aslanyan, V.; Tallents, G. J.

2014-01-01

Emission spectra and the dynamics of high energy density plasmas created by optical and Free Electron Lasers (FELs) depend on the populations of atomic levels. Calculations of plasma emission and ionization may be simplified by assuming Local Thermodynamic Equilibrium (LTE), where populations are given by the Saha-Boltzmann equation. LTE can be achieved at high densities when collisional processes are much more significant than radiative processes, but may not be valid if plasma conditions change rapidly. A collisional-radiative model has been used to calculate the times taken by carbon and iron plasmas to reach LTE at varying densities and heating rates. The effect of different energy deposition methods, as well as Ionization Potential Depression are explored. This work shows regimes in rapidly changing plasmas, such as those created by optical lasers and FELs, where the use of LTE is justified, because timescales for plasma changes are significantly longer than the times needed to achieve an LTE ionization balance

Ti film deposition process of a plasma focus: Study by an experimental design

Directory of Open Access Journals (Sweden)

M. J. Inestrosa-Izurieta

2017-10-01

Full Text Available The plasma generated by plasma focus (PF devices have substantially different physical characteristics from another plasma, energetic ions and electrons, compared with conventional plasma devices used for plasma nanofabrication, offering new and unique opportunities in the processing and synthesis of Nanomaterials. This article presents the use of a plasma focus of tens of joules, PF-50J, for the deposition of materials sprayed from the anode by the plasma dynamics in the axial direction. This work focuses on the determination of the most significant effects of the technological parameters of the system on the obtained depositions through the use of a statistical experimental design. The results allow us to give a qualitative understanding of the Ti film deposition process in our PF device depending on four different events provoked by the plasma dynamics: i an electric erosion of the outer material of the anode; ii substrate ablation generating an interlayer; iii electron beam deposition of material from the center of the anode; iv heat load provoking clustering or even melting of the deposition surface.

Positron deposition in plasmas by positronium beam ionization and transport of positrons in tokamak plasmas

International Nuclear Information System (INIS)

Murphy, T.J.

1986-11-01

In a recently proposed positron transport experiment, positrons would be deposited in a fusion plasma by forming a positronium (Ps) beam and passing it through the plasma. Positrons would be deposited as the beam is ionized by plasma ions and electrons. Radial transport of the positrons to the limiter could then be measured by detecting the gamma radiation produced by annihilation of positrons with electrons in the limiter. This would allow measurements of the transport of electron-mass particles and might shed some light on the mechanisms of electron transport in fusion plasmas. In this paper, the deposition and transport of positrons in a tokamak are simulated and the annihilation signal determined for several transport models. Calculations of the expected signals are necessary for the optimal design of a positron transport experiment. There are several mechanisms for the loss of positrons besides transport to the limiter. Annihilation with plasma electrons and reformation of positronium in positron-hydrogen collisions are two such processes. These processes can alter the signal and place restrictions ons on the plasma conditions in which positron transport experiments can be effectively performed

Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

International Nuclear Information System (INIS)

Jeon, Ki-Moon; Shin, Jae-Su; Yun, Ju-Young; Jun Lee, Sang; Kang, Sang-Woo

2014-01-01

The plasma-enhanced atomic layer deposition (PEALD) process was developed as a growth technique of SiO 2 thin films using a plasma-activated triisopropylsilane [TIPS, ((iPr) 3 SiH)] precursor. TIPS was activated by an argon plasma at the precursor injection stage of the process. Using the activated TIPS, it was possible to control the growth rate per cycle of the deposited films by adjusting the plasma ignition time. The PEALD technique allowed deposition of SiO 2 films at temperatures as low as 50 °C without carbon impurities. In addition, films obtained with plasma ignition times of 3 s and 10 s had similar values of root-mean-square surface roughness. In order to evaluate the suitability of TIPS as a precursor for low-temperature deposition of SiO 2 films, the vapor pressure of TIPS was measured. The thermal stability and the reactivity of the gas-phase TIPS with respect to water vapor were also investigated by analyzing the intensity changes of the C–H and Si–H peaks in the Fourier-transform infrared spectrum of TIPS

Deposition of aluminium nanoparticles using dense plasma focus device

International Nuclear Information System (INIS)

Devi, Naorem Bilasini; Srivastava, M P; Roy, Savita

2010-01-01

Plasma route to nanofabrication has drawn much attention recently. The dense plasma focus (DPF) device is used for depositing aluminium nanoparticles on n-type Si (111) wafer. The plasma chamber is filled with argon gas and evacuated at a pressure of 80 Pa. The substrate is placed at distances 4.0 cm, 5.0 cm and 6.0 cm from the top of the central anode. The aluminium is deposited on Si wafer at room temperature with two focused DPF shots. The deposits on the substrate are examined for their morphological properties using atomic force microscopy (AFM). The AFM images have shown the formation of aluminium nanoparticles. From the AFM images, it is found that the size of aluminium nanoparticles increases with increase in distance between the top of anode and the substrate for same number of DPF shots.

Plasma distribution of cathodic ARC deposition system

International Nuclear Information System (INIS)

Anders, S.; Raoux, S.; Krishnan, K.; MacGill, R.A.; Brown, I.G.

1996-01-01

The plasma distribution using a cathodic arc plasma source with and without magnetic macroparticle filter has been determined by depositing on a transparent plastic substrate and measuring the film absorption. It was found that the width of the distribution depends on the arc current, and it also depends on the cathode material which leads to a spatial separation of the elements when an alloy cathode is used. By applying a magnetic multicusp field near the exit of the magnetic filter, it was possible to modify the plasma distribution and obtain a flat plasma profile with a constant and homogeneous elemental distribution

An Evaluation of Atmospheric-pressure Plasma for the Cost-Effective Deposition of Antireflection Coatings

Energy Technology Data Exchange (ETDEWEB)

Rob Sailer; Guruvenket Srinivasan; Kyle W. Johnson; Douglas L. Schulz

2010-04-01

Atmospheric-pressure plasma deposition (APPD) has previously been used to deposit various functional materials including polymeric surface modification layers, transparent conducting oxides, and photo catalytic materials. For many plasma polymerized coatings, reaction occurs via free radical mechanism where the high energy electrons from the plasma activate the olefinic carbon-carbon double bonds - a typical functional group in such precursors. The precursors for such systems are typically inexpensive and readily available and have been used in vacuum PECVD previously. The objectives are to investigate: (1) the effect of plasma power, gas composition and substrate temperature on the Si-based film properties using triethylsilane(TES) as the precursor; and (2) the chemical, mechanical, and optical properties of several experimental matrices based on Design of Experiment (DOE) principals. A simple APPD route has been utilized to deposit Si based films from an inexpensive precursor - Triethylsilane (TES). Preliminary results indicates formation of Si-C & Si-O and Si-O, Si-C & Si-N bonds with oxygen and nitrogen plasmas respectively. N{sub 2}-O{sub 2} plasma showed mixed trend; however oxygen remains a significant portion of all films, despite attempts to minimize exposure to atmosphere. SiN, SiC, and SiO ratios can be modified by the reaction conditions resulting in differing film properties. SE studies revealed that films with SiN bond possess refractive index higher than coatings with Si-O/Si-C bonds. Variable angle reflectance studies showed that SiOCN coatings offer AR properties; however thickness and refractive index optimization of these coatings remains necessary for application as potential AR coatings.

Plasma processes and film growth of expanding thermal plasma deposited textured zinc oxide

NARCIS (Netherlands)

Groenen, R.; Linden, J.L.; Sanden, van de M.C.M.

2005-01-01

Plasma processes and film growth of textured zinc oxide deposited from oxygen and diethyl zinc utilizing expanding thermal argon plasma created by a cascaded arc is discussed. In all conditions explored, an excess of argon ions and low temperature electrons is available, which represent the

Corrosion properties of plasma deposited high-alloy steel

Czech Academy of Sciences Publication Activity Database

Voleník, Karel; Pražák, M.; Kalabisová, E.; Kreislová, K.; Neufuss, Karel

2002-01-01

Roč. 47, - (2002), s. 243-254 ISSN 0001-7043 R&D Projects: GA ČR GA106/99/0298 Institutional research plan: CEZ:AV0Z2043910 Keywords : plasma deposits, high-alloy steel, polarization curves, corrosion test Subject RIV: BL - Plasma and Gas Discharge Physics

Novel Cyclosilazane-Type Silicon Precursor and Two-Step Plasma for Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride.

Science.gov (United States)

Park, Jae-Min; Jang, Se Jin; Lee, Sang-Ick; Lee, Won-Jun

2018-03-14

We designed cyclosilazane-type silicon precursors and proposed a three-step plasma-enhanced atomic layer deposition (PEALD) process to prepare silicon nitride films with high quality and excellent step coverage. The cyclosilazane-type precursor, 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2), has a closed ring structure for good thermal stability and high reactivity. CSN-2 showed thermal stability up to 450 °C and a sufficient vapor pressure of 4 Torr at 60 °C. The energy for the chemisorption of CSN-2 on the undercoordinated silicon nitride surface as calculated by density functional theory method was -7.38 eV. The PEALD process window was between 200 and 500 °C, with a growth rate of 0.43 Å/cycle. The best film quality was obtained at 500 °C, with hydrogen impurity of ∼7 atom %, oxygen impurity less than 2 atom %, low wet etching rate, and excellent step coverage of ∼95%. At 300 °C and lower temperatures, the wet etching rate was high especially at the lower sidewall of the trench pattern. We introduced the three-step PEALD process to improve the film quality and the step coverage on the lower sidewall. The sequence of the three-step PEALD process consists of the CSN-2 feeding step, the NH 3 /N 2 plasma step, and the N 2 plasma step. The H radicals in NH 3 /N 2 plasma efficiently remove the ligands from the precursor, and the N 2 plasma after the NH 3 plasma removes the surface hydrogen atoms to activate the adsorption of the precursor. The films deposited at 300 °C using the novel precursor and the three-step PEALD process showed a significantly improved step coverage of ∼95% and an excellent wet etching resistance at the lower sidewall, which is only twice as high as that of the blanket film prepared by low-pressure chemical vapor deposition.

Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperatures

NARCIS (Netherlands)

Verkerk, A.D.; de Jong, M.M.; Rath, J.K.; Brinza, M.; Schropp, R.E.I.; Goedheer, W.J.; Krzhizhanovskaya, V.V.; Gorbachev, Y.E.; Orlov, K.E.; Khilkevitch, E.M.; Smirnov, A.S.

2009-01-01

In order to deposit thin film silicon solar cells on plastics and papers, the deposition process needs to be adapted for low deposition temperatures. In a very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) process, both the gas phase and the surface processes are affected by

Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

International Nuclear Information System (INIS)

Brillson, L. J.; Young, A. P.; White, B. D.; Schaefer, J.; Niimi, H.; Lee, Y. M.; Lucovsky, G.

2000-01-01

Low-energy electron-excited nanoluminescence spectroscopy reveals depth-resolved optical emission associated with traps near the interface between ultrathin SiO 2 deposited by plasma-enhanced chemical vapor deposition on plasma-oxidized crystalline Si. These near-interface states exhibit a strong dependence on local chemical bonding changes introduced by thermal/gas processing, layer-specific nitridation, or depth-dependent radiation exposure. The depth-dependent results provide a means to test chemical and structural bond models used to develop advanced dielectric-semiconductor junctions. (c) 2000 American Vacuum Society

Solution precursor plasma deposition of nanostructured ZnO coatings

International Nuclear Information System (INIS)

Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

2011-01-01

Highlights: → The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. → It is highly capable of developing tailorable nanostructures. → This technique can be employed to spray the coatings on any kind of substrates including polymers. → The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance (∼65-80%) and reflectivity (∼65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 mΩ cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

Solution precursor plasma deposition of nanostructured ZnO coatings

Energy Technology Data Exchange (ETDEWEB)

Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States)

2011-08-15

Highlights: {yields} The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. {yields} It is highly capable of developing tailorable nanostructures. {yields} This technique can be employed to spray the coatings on any kind of substrates including polymers. {yields} The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance ({approx}65-80%) and reflectivity ({approx}65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 m{Omega} cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

Low pressure plasma spray deposition of W-Ni-Fe alloy

International Nuclear Information System (INIS)

Mutasim, Z.Z.; Smith, R.W.

1991-01-01

The production of net shape refractory metal structural preforms are increasing in importance in chemical processing, defense and aerospace applications. Conventional methods become limited for refractory metal processing due to the high melting temperatures and fabrication difficulties. Plasma spray forming, a high temperature process, has been shown to be capable of refractory metal powder consolidation in net shape products. The research reported here has evaluated this method for the deposition of heavy tungsten alloys. Plasma Melted Rapidly Solidified (PMRS) W 8%Ni-2%Fe refractory metal powders were spray formed using vacuum plasma spray (VPS) process and produced 99% dense, fine grain and homogeneous microstructures. In this paper plasma operating parameters (plasma arc gas type and flowrate plasma gun nozzle size and spray distance) were studied and their effects on deposit's density and microstructure are reported

Effect of deposition strategy on the microstructure and mechanical properties of Inconel 625 superalloy fabricated by pulsed plasma arc deposition

International Nuclear Information System (INIS)

Xu, F.J.; Lv, Y.H.; Xu, B.S.; Liu, Y.X.; Shu, F.Y.; He, P.

2013-01-01

Highlights: ► PPAD Inconel 625 sample deposited with ICS strategy exhibits improved surface quality. ► ICS sample exhibits finer microstructure and improved mechanical properties. ► Higher level γ′ and γ″ phases are precipitated in the ICS sample. ► STA heat treatment reduced the concentration of Nb element. ► STA heat treatment improved the mechanical properties of PPAD Inconel 625. -- Abstract: Pulsed plasma arc deposition (PPAD), which combines pulsed plasma cladding with rapid prototyping, is a promising technology for manufacturing near net shape components due to its superiority in cost and convenience of processing. The aim of this study was to investigate the influences of interpass cooling strategy (ICS) and continuous deposition strategy (CDS) on microstructure and mechanical properties of the PPAD Inconel 625 non-ferrous alloy. The as-deposited samples in the two conditions were subjected to the post heat treatment: 980 °C solution treatment + direct aging (STA). The microstructures and mechanical properties of the samples were characterized by means of scanning electron microscopy (SEM) equipped with energy dispersive spectrometer (EDS), transmission electron microscopy (TEM), micro-hardness and tensile testers. It was found that the as-deposited microstructure exhibited homogenous cellular dendrite structure, which grew epitaxially along the deposition direction. The as-deposited microstructure of ICS sample revealed smaller dendritic arm spacing, less niobium segregation and discontinuous finer Laves phase in the interdendritic regions compared to the case of continuous deposition strategy (CDS). The ICS sample exhibited better mechanical properties than CDS sample. After STA heat treatment, a large amount of Laves particles in the interdendritic regions were dissolved, resulting in the reduction of Nb segregation and the precipitation of needle-like δ (Ni 3 Nb). The tensile and yield strength of the as-deposited samples were

Antireflection coatings on plastics deposited by plasma ...

Indian Academy of Sciences (India)

In the ophthalmic industry, plastic lenses are rapidly displacing glass lenses ... Moreover, the plasma polymerization process allows deposition of optical films at room temperature, essential for plastics. ... Bulletin of Materials Science | News.

Two dimensional radial gas flows in atmospheric pressure plasma-enhanced chemical vapor deposition

Science.gov (United States)

Kim, Gwihyun; Park, Seran; Shin, Hyunsu; Song, Seungho; Oh, Hoon-Jung; Ko, Dae Hong; Choi, Jung-Il; Baik, Seung Jae

2017-12-01

Atmospheric pressure (AP) operation of plasma-enhanced chemical vapor deposition (PECVD) is one of promising concepts for high quality and low cost processing. Atmospheric plasma discharge requires narrow gap configuration, which causes an inherent feature of AP PECVD. Two dimensional radial gas flows in AP PECVD induces radial variation of mass-transport and that of substrate temperature. The opposite trend of these variations would be the key consideration in the development of uniform deposition process. Another inherent feature of AP PECVD is confined plasma discharge, from which volume power density concept is derived as a key parameter for the control of deposition rate. We investigated deposition rate as a function of volume power density, gas flux, source gas partial pressure, hydrogen partial pressure, plasma source frequency, and substrate temperature; and derived a design guideline of deposition tool and process development in terms of deposition rate and uniformity.

Ion deposition by inductively coupled plasma mass spectrometry

International Nuclear Information System (INIS)

Hu, K.; Houk, R.S.

1996-01-01

An atmospheric pressure inductively coupled plasma (ICP) is used with a quadrupole mass spectrometer (MS) for ion deposition. The deposited element is introduced as a nebulized aqueous solution. Modifications to the ICP-MS device allow generation and deposition of a mass-resolved beam of 165 Ho + at 5x10 12 ions s -1 . The ICP is a universal, multielement ion source that can potentially be used for applications such as deposition of mixtures of widely varying stoichiometry or of alternating layers of different elements. copyright 1996 American Vacuum Society

Relationship between energy deposition and shock wave phenomenon in an underwater electrical wire explosion

Science.gov (United States)

Han, Ruoyu; Zhou, Haibin; Wu, Jiawei; Qiu, Aici; Ding, Weidong; Zhang, Yongmin

2017-09-01

An experimental study of pressure waves generated by an exploding copper wire in a water medium is performed. We examined the effects of energy deposited at different stages on the characteristics of the resulting shock waves. In the experiments, a microsecond time-scale pulsed current source was used to explode a 300-μm-diameter, 4-cm-long copper wire with initial stored energies ranging from 500 to 2700 J. Our experimental results indicated that the peak pressure (4.5-8.1 MPa) and energy (49-287 J) of the shock waves did not follow a simple relationship with any electrical parameters, such as peak voltage or deposited energy. Conversely, the impulse had a quasi-linear relationship with the parameter Π. We also found that the peak pressure was mainly influenced by the energy deposited before separation of the shock wave front and the discharge plasma channel (DPC). The decay time constant of the pressure waveform was affected by the energy injection after the separation. These phenomena clearly demonstrated that the deposited energy influenced the expansion of the DPC and affected the shock wave characteristics.

Calcium titanate (CaTiO{sub 3}) dielectrics prepared by plasma spray and post-deposition thermal treatment

Energy Technology Data Exchange (ETDEWEB)

Ctibor, Pavel [Materials Engineering Department, Institute of Plasma Physics ASCR, v.v.i., Za Slovankou 3, Prague 8 (Czech Republic); Kotlan, Jiri, E-mail: kotlan@ipp.cas.cz [Materials Engineering Department, Institute of Plasma Physics ASCR, v.v.i., Za Slovankou 3, Prague 8 (Czech Republic); Department of Electrotechnology, Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2, Prague 6 (Czech Republic); Pala, Zdenek [Materials Engineering Department, Institute of Plasma Physics ASCR, v.v.i., Za Slovankou 3, Prague 8 (Czech Republic); Sedlacek, Josef [Department of Electrotechnology, Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2, Prague 6 (Czech Republic); Hajkova, Zuzana; Grygar, Tomas Matys [Institute of Inorganic Chemistry ASCR, v.v.i., Husinec-Rez 1001, Rez (Czech Republic)

2015-12-15

Highlights: • Calcium titanate was sprayed by two different plasma spray systems. • Significant improvement of dielectric properties after annealing was observed. • Calcium titanate self-supporting parts can be fabricated by plasma spraying. - Abstract: This paper studies calcium titanate (CaTiO{sub 3}) dielectrics prepared by plasma spray technology. A water stabilized plasma gun (WSP) as well as a widely used gas stabilized plasma gun (GSP) were employed in this study to deposit three sample sets at different spray conditions. Prepared specimens were annealed in air at atmospheric pressure for 2 h at various temperatures from 530 to 1170 °C. X-ray diffraction (XRD), Raman spectroscopy and porosity measurements were used for sample characterization. Dielectric spectroscopy was applied to obtain relative permittivity, conductivity and loss factor frequency dependence. Band gap energy was estimated from reflectance measurements. The work is focused on the explanation of changes in microstructure and properties of a plasma sprayed deposit after thermal annealing. Obtained results show significant improvement of dielectric properties after thermal annealing.

Plasma-deposited a-C(N) H films

CERN Document Server

Franceschini, D E

2000-01-01

The growth behaviour, film structure and mechanical properties of plasma-deposited amorphous hydrogenated carbon-nitrogen films are shortly reviewed. The effect of nitrogen-containing gas addition to the deposition to the hydrocarbon atmospheres used is discussed, considering the modifications observed in the chemical composition growth kinetics, carbon atom hybridisation and chemical bonding arrangements of a-C(N):H films. The overall structure behaviour is correlated to the variation of the mechanical properties.

High powered pulsed plasma enhanced deposition of thin film semiconductor and optical materials

International Nuclear Information System (INIS)

Llewellyn, I.P.; Sheach, K.J.A.; Heinecke, R.A.

1993-01-01

A glow discharge deposition technique is described which allows the deposition of a large range of high quality materials without the requirement for substrate heating. The method is differentiated from conventional plasma deposition techniques in that a much higher degree of dissociation is achieved in the gases prior to deposition, such that thermally activated surface reactions are no longer required in order to produce a dense film. The necessary discharge intensity (>300Wcm -3 ) is achieved using a high power radio frequency generator which is pulsed at a low duty cycle (1%) to keep the average energy of the discharge low (100W), in order to avoid the discharge heating the substrate. In addition, by varying the gas composition between discharge pulses, layered structures of materials can be produced, with a disordered interface about 8 A thick. Various uses of the technique in semiconductor and optical filter production are described, and the properties of films deposited using these technique are presented. (orig.)

Plasma deposition of polymer composite films incorporating nanocellulose whiskers

Science.gov (United States)

Samyn, P.; Airoudj, A.; Laborie, M.-P.; Mathew, A. P.; Roucoules, V.

2011-11-01

In a trend for sustainable engineering and functionalization of surfaces, we explore the possibilities of gas phase processes to deposit nanocomposite films. From an analysis of pulsed plasma polymerization of maleic anhydride in the presence of nanocellulose whiskers, it seems that thin nanocomposite films can be deposited with various patterns. By specifically modifying plasma parameters such as total power, duty cycle, and monomer gas pressure, the nanocellulose whiskers are either incorporated into a buckled polymer film or single nanocellulose whiskers are deposited on top of a polymeric film. The density of the latter can be controlled by modifying the exact positioning of the substrate in the reactor. The resulting morphologies are evaluated by optical microscopy, AFM, contact angle measurements and ellipsometry.

Interpretation of plasma impurity deposition probes. Analytic approximation

Science.gov (United States)

Stangeby, P. C.

1987-10-01

Insertion of a probe into the plasma induces a high speed flow of the hydrogenic plasma to the probe which, by friction, accelerates the impurity ions to velocities approaching the hydrogenic ion acoustic speed, i.e., higher than the impurity ion thermal speed. A simple analytic theory based on this effect provides a relation between impurity fluxes to the probe Γimp and the undisturbed impurity ion density nimp, with the hydrogenic temperature and density as input parameters. Probe size also influences the collection process and large probes are found to attract a higher flux density than small probes in the same plasma. The quantity actually measured, cimp, the impurity atom surface density (m-2) net-deposited on the probe, is related to Γimp and thus to nimp by taking into account the partial removal of deposited material caused by sputtering and the redeposition process.

Optimizing Thermoelectric Properties of In Situ Plasma-Spray-Synthesized Sub-stoichiometric TiO2-x Deposits

Science.gov (United States)

Lee, Hwasoo; Seshadri, Ramachandran Chidambaram; Pala, Zdenek; Sampath, Sanjay

2018-06-01

In this article, an attempt has been made to relate the thermoelectric properties of thermal spray deposits of sub-stoichiometric titania to process-induced phase and microstructural variances. The TiO2-x deposits were formed through the in situ reaction of the TiO1.9 or TiO1.7 feedstock within the high-temperature plasma flame and manipulated via varying the amounts of hydrogen fed into in the thermal plasma. Changes in the flow rates of H2 in the plasma plume greatly affected the in-flight particle behavior and composition of the deposits. For reference, a high-velocity oxy-fuel spray torch was also used to deposit the two varieties of feedstocks. Refinements to the representation of the in-flight particle characteristics derived via single particle and ensemble diagnostic methods are proposed using the group parameters (melting index and kinetic energy). The results show that depending on the value of the melting index, there is an inverse proportional relationship between electrical conductivity and Seebeck coefficient, whereas thermal conductivity has a directly proportional relationship with the electrical conductivity. Retention of the original phase and reduced decomposition is beneficial to retain the high Seebeck coefficient or the high electrical conductivity in the TiO2 system.

Thermal plasma spheroidization and spray deposition of barium titanate powder and characterization of the plasma sprayable powder

Energy Technology Data Exchange (ETDEWEB)

Pakseresht, A.H., E-mail: amirh_pak@yahoo.com [Department of Ceramics, Materials and Energy Research Center, P.O. Box 31787-316, Karaj (Iran, Islamic Republic of); Rahimipour, M.R. [Department of Ceramics, Materials and Energy Research Center, P.O. Box 31787-316, Karaj (Iran, Islamic Republic of); Vaezi, M.R. [Department of Nanotechnology and Advanced Materials, Materials and Energy Research Center, P.O. Box 31787-316, Karaj (Iran, Islamic Republic of); Salehi, M. [Department of Materials Engineering, Isfahan University of Technology, P.O. Box 84156-83111, Isfahan (Iran, Islamic Republic of)

2016-04-15

In this paper, atmospheric plasma spray method was used to produce dense plasma sprayable powder and thick barium titanate film. In this regard, the commercially feedstock powders were granulated and spheroidized by the organic binder and the thermal spray process, respectively. Scanning electron microscopy was used to investigate the microstructure of the produced powders and the final deposits. X-ray diffraction was also implemented to characterize phase of the sprayed powder. The results indicated that spheroidized powder had suitable flowability as well as high density. The micro-hardness of the film produced by the sprayed powders was higher than that of the film deposited by the irregular granules. Additionally, relative permittivity of the films was increased by decreasing the defects from 160 to 293 for film deposited using spheroidized powder. The reduction in the relative permittivity of deposits, in comparison with the bulk material, was due to the existence of common defects in the thermal spray process. - Highlights: • We prepare sprayable BaTiO{sub 3} powder with no or less inside voids for plasma spray application for first time. • The sprayable powder has good flow characteristics and high density. • Powder spheroidization via plasma spray improves the hardness and dielectric properties of the deposited film.

Thermal plasma spheroidization and spray deposition of barium titanate powder and characterization of the plasma sprayable powder

International Nuclear Information System (INIS)

Pakseresht, A.H.; Rahimipour, M.R.; Vaezi, M.R.; Salehi, M.

2016-01-01

In this paper, atmospheric plasma spray method was used to produce dense plasma sprayable powder and thick barium titanate film. In this regard, the commercially feedstock powders were granulated and spheroidized by the organic binder and the thermal spray process, respectively. Scanning electron microscopy was used to investigate the microstructure of the produced powders and the final deposits. X-ray diffraction was also implemented to characterize phase of the sprayed powder. The results indicated that spheroidized powder had suitable flowability as well as high density. The micro-hardness of the film produced by the sprayed powders was higher than that of the film deposited by the irregular granules. Additionally, relative permittivity of the films was increased by decreasing the defects from 160 to 293 for film deposited using spheroidized powder. The reduction in the relative permittivity of deposits, in comparison with the bulk material, was due to the existence of common defects in the thermal spray process. - Highlights: • We prepare sprayable BaTiO_3 powder with no or less inside voids for plasma spray application for first time. • The sprayable powder has good flow characteristics and high density. • Powder spheroidization via plasma spray improves the hardness and dielectric properties of the deposited film.

Measurements of recombination coefficient of hydrogen atoms on plasma deposited thin films

International Nuclear Information System (INIS)

Drenik, A.; Vesel, A.; Mozetic, M.

2006-01-01

We have performed experiments in plasma afterglow in order to determine the recombination coefficients of plasma deposited thin films of tungsten and graphite. Plasma deposited films rather than bulk material were used in order to more closely emulate surface structure of plasma-facing material deposits in fusion reactors. We have also determined the recombination coefficient of 85250 borosilicate glass and Teflon. Plasma was created by means of a radio frequency generator in a mixture of argon and hydrogen at the pressures between 60 Pa and 280 Pa. The degree of dissociation of hydrogen molecules was found to be between 0.1 and 1. The H-atom density was measured by Fiber Optic Catalytic Probe. The recombination coefficient was determined by measuring the axial profile of the H-atom density and using Smith's side arm diffusion model. (author)

Evidence of coexistence of micro and nanoporosity of organo-silica polymeric films deposited on silicon by plasma deposition

International Nuclear Information System (INIS)

Purohit, Viswas; Mielczarski, Ela; Mielczarski, Jerzy A.; Akesso, Laurent

2013-01-01

A range of hybrid, SiOCH films were deposited on silicon substrates within a radio frequency plasma reactor using hexamethyldisiloxane (HMDSO) as a precursor. The plasma polymerized films were deposited at various HMDSO/argon/oxygen ratios. The composition and structure, at microscopic and nanoscopic levels, of the deposited films were determined by external reflection and transmission Fourier Transform Infrared (FTIR) spectroscopy as well as by X-Ray Photoelectron Spectroscopy (XPS). The content of carbon and oxygen in films were found to be inversely proportional to each other. XPS results showed that the outermost surface of the deposited films are nanoporous and coexist with microporosity which was revealed by electron microscopy. The structure of deposited coatings is anisotropic as was documented by polarized external reflection FTIR spectroscopy. Several correlations between the film chemical composition, surface structure, and macroscopic properties of the films such as: hydrophobicity and hydrophilicity were established. - Highlights: • Hybrid organo-polymer silicon films deposited by RF plasma on silicon substrates. • FTIR and XPS reveal porosity by interpreting bonding between Si and –O. • Quantification of nano and microporosity are identified with bonding of Si with –O

Evidence of coexistence of micro and nanoporosity of organo-silica polymeric films deposited on silicon by plasma deposition

Energy Technology Data Exchange (ETDEWEB)

Purohit, Viswas, E-mail: vishwas.purohit@gmail.com [Laboratoire Environnment et Mineralurgie, UMR 7569 CNRS, INPL-ENSG, BP.40, 54501 Vandoeuvre-les-Nancy (France); Mielczarski, Ela; Mielczarski, Jerzy A. [Laboratoire Environnment et Mineralurgie, UMR 7569 CNRS, INPL-ENSG, BP.40, 54501 Vandoeuvre-les-Nancy (France); Akesso, Laurent [Teer Coatings Ltd., Droitwich, Worcestershire WR9 9AS (United Kingdom)

2013-09-16

A range of hybrid, SiOCH films were deposited on silicon substrates within a radio frequency plasma reactor using hexamethyldisiloxane (HMDSO) as a precursor. The plasma polymerized films were deposited at various HMDSO/argon/oxygen ratios. The composition and structure, at microscopic and nanoscopic levels, of the deposited films were determined by external reflection and transmission Fourier Transform Infrared (FTIR) spectroscopy as well as by X-Ray Photoelectron Spectroscopy (XPS). The content of carbon and oxygen in films were found to be inversely proportional to each other. XPS results showed that the outermost surface of the deposited films are nanoporous and coexist with microporosity which was revealed by electron microscopy. The structure of deposited coatings is anisotropic as was documented by polarized external reflection FTIR spectroscopy. Several correlations between the film chemical composition, surface structure, and macroscopic properties of the films such as: hydrophobicity and hydrophilicity were established. - Highlights: • Hybrid organo-polymer silicon films deposited by RF plasma on silicon substrates. • FTIR and XPS reveal porosity by interpreting bonding between Si and –O. • Quantification of nano and microporosity are identified with bonding of Si with –O.

The application of magnetic self-filter to optimization of AIN film growth process during the impulse plasma deposition synthesis

Directory of Open Access Journals (Sweden)

Chodun Rafal

2016-03-01

Full Text Available This work presents the very first results of the application of plasma magnetic filtering achieved by a coil coupled with an electrical circuit of a coaxial accelerator during the synthesis of A1N thin films by use of Impulse Plasma Deposition method (IPD. The uniqueness of this technical solution lies in the fact that the filter is not supplied, controlled and synchronized from any external device. Our solution uses the energy from the electrical circuit of plasma accelerator. The plasma state was described on the basis of OES studies. Estimation of the effects of plasma filtering on the film quality was carried out on the basis of characterization of structure morphology (SEM, phase and chemical composition (vibrational spectroscopy. Our work has shown that the use of the developed magnetic self-filter improved the structure of the AlN coatings synthesized under the condition of impulse plasma, especially by the minimization of the tendency to deposit metallic aluminum droplets and columnar growth.

Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

Science.gov (United States)

Chou, Chia-Man; Lai, Chih-Chang; Chang, Chih-Wei; Wen, Kai-Shin; Hsiao, Vincent K. S.

2017-07-01

We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

Plasma and Ion Assistance in Physical Vapor Deposition: A Historical Perspective

International Nuclear Information System (INIS)

Anders, Andre

2007-01-01

Deposition of films using plasma or plasma-assist can be traced back surprisingly far, namely to the 18th century for arcs and to the 19th century for sputtering. However, only since the 1960s the coatings community considered other processes than evaporation for large scale commercial use. Ion Plating was perhaps the first important process, introducing vapor ionization and substrate bias to generate a beam of ions arriving on the surface of the growing film. Rather independently, cathodic arc deposition was established as an energetic condensation process, first in the former Soviet Union in the 1970s, and in the 1980s in the Western Hemisphere. About a dozen various ion-based coating technologies evolved in the last decades, all characterized by specific plasma or ion generation processes. Gridded and gridless ion sources were taken from space propulsion and applied to thin film deposition. Modeling and simulation have helped to make plasma and ions effects to be reasonably well understood. Yet--due to the complex, often non-linear and non-equilibrium nature of plasma and surface interactions--there is still a place for the experience plasma 'sourcerer'

Characteristics of toroidal energy deposition asymmetries in ASDEX

International Nuclear Information System (INIS)

Evans, T.E.; Neuhauser, J.; Leuterer, F.; Mueller, E.R.

1990-01-01

Large toroidal and poloidal asymmetries with characteristics which are sensitively dependent on q a , the vertical position of the plasma, and the type of additional heating are observed in the energy flow to the ASDEX divertor target plates. The largest asymmetries and total energy depositions are observed during lower hybrid wave injection experiments with approximately 50% of the input energy going to the combined divertor targets and shields. A maximum localized energy density loading of 10 MJ/m 2 is typical under these conditions. Measurements of the asymmetries are consistent with a model in which magnetic islands and ergodicity due to intrinsic magnetic perturbations dominate the energy transpot across the primary magnetic separatrix. The results emphasize the essential role of resonant magnetic perturbations in determining the performance of tokamaks and demonstrate that non-axisymmetric effects caused by small perturbations become increasingly important in determining the transport properties as the injected power is increased. (orig.)

Contamination due to memory effects in filtered vacuum arc plasma deposition systems

CERN Document Server

Martins, D R; Verdonck, P; Brown, I G

2002-01-01

Thin film synthesis by filtered vacuum arc plasma deposition is a widely used technique with a number of important emerging technological applications. A characteristic feature of the method is that during the deposition process not only is the substrate coated by the plasma, but the plasma gun itself and the magnetic field coil and/or vacuum vessel section constituting the macroparticle filter are also coated to some extent. If then the plasma gun cathode is changed to a new element, there can be a contamination of the subsequent film deposition by sputtering from various parts of the system of the previous coating species. We have experimentally explored this effect and compared our results with theoretical estimates of sputtering from the SRIM (Stopping and Range of Ions in Matter) code. We find film contamination of order 10-4 - 10-3, and the memory of the prior history of the deposition hardware can be relatively long-lasting.

Contamination due to memory effects in filtered vacuum arc plasma deposition systems

International Nuclear Information System (INIS)

Martins, D.R.; Salvadori, M.C.; Verdonck, P.; Brown, I.G.

2002-01-01

Thin film synthesis by filtered vacuum arc plasma deposition is a widely used technique with a number of important emerging technological applications. A characteristic feature of the method is that during the deposition process not only is the substrate coated by the plasma, but the plasma gun itself and the magnetic field coil and/or vacuum vessel section constituting the macroparticle filter are also coated to some extent. If then the plasma gun cathode is changed to a new element, there can be a contamination of the subsequent film deposition by sputtering from various parts of the system of the previous coating species. We have experimentally explored this effect and compared our results with theoretical estimates of sputtering from the stopping and range of ions in matter code. We find film contamination of the order of 10 -4 -10 -3 , and the memory of the prior history of the deposition hardware can be relatively long lasting

Contamination due to memory effects in filtered vacuum arc plasma deposition systems

Energy Technology Data Exchange (ETDEWEB)

Martins, D.R.; Salvadori, M.C.; Verdonck, P.; Brown, I.G.

2002-08-13

Thin film synthesis by filtered vacuum arc plasma deposition is a widely used technique with a number of important emerging technological applications. A characteristic feature of the method is that during the deposition process not only is the substrate coated by the plasma, but the plasma gun itself and the magnetic field coil and/or vacuum vessel section constituting the macroparticle filter are also coated to some extent. If then the plasma gun cathode is changed to a new element, there can be a contamination of the subsequent film deposition by sputtering from various parts of the system of the previous coating species. We have experimentally explored this effect and compared our results with theoretical estimates of sputtering from the SRIM (Stopping and Range of Ions in Matter) code. We find film contamination of order 10-4 - 10-3, and the memory of the prior history of the deposition hardware can be relatively long-lasting.

Plasma Deposited Thin Iron Oxide Films as Electrocatalyst for Oxygen Reduction Reaction in Proton Exchange Membrane Fuel Cells

Directory of Open Access Journals (Sweden)

Lukasz JOZWIAK

2017-02-01

Full Text Available The possibility of using plasma deposited thin films of iron oxides as electrocatalyst for oxygen reduction reaction (ORR in proton exchange membrane fuel cells (PEMFC was examined. Results of energy-dispersive X-ray spectroscopy (EDX and X-ray photoelectron spectroscopy (XPS analysis indicated that the plasma deposit consisted mainly of FeOX structures with the X parameter close to 1.5. For as deposited material iron atoms are almost exclusively in the Fe3+ oxidation state without annealing in oxygen containing atmosphere. However, the annealing procedure can be used to remove the remains of carbon deposit from surface. The single cell test (SCT was performed to determine the suitability of the produced material for ORR. Preliminary results showed that power density of 0.23 mW/cm2 could be reached in the tested cell.DOI: http://dx.doi.org/10.5755/j01.ms.23.1.14406

Permeation mechanisms of pulsed microwave plasma deposited silicon oxide films for food packaging applications

International Nuclear Information System (INIS)

Deilmann, Michael; Grabowski, Mirko; Theiss, Sebastian; Bibinov, Nikita; Awakowicz, Peter

2008-01-01

Silicon oxide barrier layers are deposited on polyethylene terephthalate as permeation barriers for food packaging applications by means of a low pressure microwave plasma. Hexamethyldisiloxane (HMDSO) and oxygen are used as process gases to deposit SiO x coatings via pulsed low pressure plasmas. The layer composition of the coating is investigated by Fourier transform infrared spectroscopy and energy dispersive x-ray spectroscopy to show correlations with barrier properties of the films. The oxygen permeation barrier is determined by the carrier gas method using an electrochemical detector. The transition from low to high barrier films is mapped by the transition from organic SiO x C y H z layers to quartz-like SiO 1.7 films containing silanol bound hydrogen. A residual permeation as low as J = 1 ± 0.3 cm 3 m -2 day -1 bar -1 is achieved, which is a good value for food packaging applications. Additionally, the activation energy E p of oxygen permeation is analysed and a strong increase from E p = 31.5 kJ mol -1 for SiO x C y H z -like coatings to E p = 53.7 kJ mol -1 for SiO 1.7 films is observed by increasing the oxygen dilution of HMDSO:O 2 plasma. The reason for the residual permeation of high barrier films is discussed and coating defects are visualized by capacitively coupled atomic oxygen plasma etching of coated substrates. A defect density of 3000 mm -2 is revealed

Influence of substrate geometry on ion-plasma coating deposition process

International Nuclear Information System (INIS)

Khoroshikh, V.M.; Leonov, S.A.; Belous, V.A.

2008-01-01

Influence of substrate geometry on the feature of Ti vacuum arc plasma streams condensation process in presence of N 2 or Ar in a discharge ambient were investigated. Character of gas pressure and substrate potential influence on deposition rate is conditioned the competitive processes of condensation and sputtering, and also presence of double electric layer on a border plasma-substrate. Influence of potential on deposition rate especially strongly shows up for cylindrical substrates of small size. For such substrates it was found substantial (approximately in 4 times) growth of deposition rate at the increasing of negative potential from 100 to 700 V when nitrogen pressure is ∼0,3...2,5 Pa. Possibility of droplet-free coating deposition the substrate backs and in discharge ambient, being outside area of cathode direct visibility is shown

Inductively coupled plasma nanoetching of atomic layer deposition alumina

DEFF Research Database (Denmark)

Han, Anpan; Chang, Bingdong; Todeschini, Matteo

2018-01-01

such as silicon dioxide, silicon nitride, and diamond. In this report, we systematically study nanoscale plasma etching of Al2O3 with electron beam lithography and deep UV resist masks. The gas composition and pressure were tuned for optimal etching, and redeposition conditions were mapped. With a BCl3 and Ar...... the resist profile angle. For Al2O3 patterned with deep UV lithography, the smallest structures were 220 nm. For electron beam lithography patterns, the smallest gratings were 18-nm-wide with 50-nm-pitch. Using alumina as a hard mask, we show aspect ratio of 7-10 for subsequent silicon plasma etching, and we......Al2O3 thin-film deposited by atomic layer deposition is an attractive plasma etch mask for Micro and Nano Electro-Mechanical Systems (MEMS and NEMS). 20-nm-thick Al2O3 mask enables through silicon wafer plasma etching. Al2O3 is also an excellent etch mask for other important MEMS materials...

Plasma Spray-Physical Vapor Deposition (PS-PVD) of Ceramics for Protective Coatings

Science.gov (United States)

Harder, Bryan J.; Zhu, Dongming

2011-01-01

In order to generate advanced multilayer thermal and environmental protection systems, a new deposition process is needed to bridge the gap between conventional plasma spray, which produces relatively thick coatings on the order of 125-250 microns, and conventional vapor phase processes such as electron beam physical vapor deposition (EB-PVD) which are limited by relatively slow deposition rates, high investment costs, and coating material vapor pressure requirements. The use of Plasma Spray - Physical Vapor Deposition (PS-PVD) processing fills this gap and allows thin (deposited and multilayer coatings of less than 100 microns to be generated with the flexibility to tailor microstructures by changing processing conditions. Coatings of yttria-stabilized zirconia (YSZ) were applied to NiCrAlY bond coated superalloy substrates using the PS-PVD coater at NASA Glenn Research Center. A design-of-experiments was used to examine the effects of process variables (Ar/He plasma gas ratio, the total plasma gas flow, and the torch current) on chamber pressure and torch power. Coating thickness, phase and microstructure were evaluated for each set of deposition conditions. Low chamber pressures and high power were shown to increase coating thickness and create columnar-like structures. Likewise, high chamber pressures and low power had lower growth rates, but resulted in flatter, more homogeneous layers

Optical, mechanical and surface properties of amorphous carbonaceous thin films obtained by plasma enhanced chemical vapor deposition and plasma immersion ion implantation and deposition

Science.gov (United States)

Turri, Rafael G.; Santos, Ricardo M.; Rangel, Elidiane C.; da Cruz, Nilson C.; Bortoleto, José R. R.; Dias da Silva, José H.; Antonio, César Augusto; Durrant, Steven F.

2013-09-01

Diverse amorphous hydrogenated carbon-based films (a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:Si:O) were obtained by radiofrequency plasma enhanced chemical vapor deposition (PECVD) and plasma immersion ion implantation and deposition (PIIID). The same precursors were used in the production of each pair of each type of film, such as a-C:H, using both PECVD and PIIID. Optical properties, namely the refractive index, n, absorption coefficient, α, and optical gap, ETauc, of these films were obtained via transmission spectra in the ultraviolet-visible near-infrared range (wavelengths from 300 to 3300 nm). Film hardness, elastic modulus and stiffness were obtained as a function of depth using nano-indentation. Surface energy values were calculated from liquid drop contact angle data. Film roughness and morphology were assessed using atomic force microscopy (AFM). The PIIID films were usually thinner and possessed higher refractive indices than the PECVD films. Determined refractive indices are consistent with literature values for similar types of films. Values of ETauc were increased in the PIIID films compared to the PECVD films. An exception was the a-C:H:Si:O films, for which that obtained by PIIID was thicker and exhibited a decreased ETauc. The mechanical properties - hardness, elastic modulus and stiffness - of films produced by PECVD and PIIID generally present small differences. An interesting effect is the increase in the hardness of a-C:H:Cl films from 1.0 to 3.0 GPa when ion implantation is employed. Surface energy correlates well with surface roughness. The implanted films are usually smoother than those obtained by PECVD.

Optical, mechanical and surface properties of amorphous carbonaceous thin films obtained by plasma enhanced chemical vapor deposition and plasma immersion ion implantation and deposition

International Nuclear Information System (INIS)

Turri, Rafael G.; Santos, Ricardo M.; Rangel, Elidiane C.; Cruz, Nilson C. da; Bortoleto, José R.R.; Dias da Silva, José H.; Antonio, César Augusto; Durrant, Steven F.

2013-01-01

Diverse amorphous hydrogenated carbon-based films (a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:Si:O) were obtained by radiofrequency plasma enhanced chemical vapor deposition (PECVD) and plasma immersion ion implantation and deposition (PIIID). The same precursors were used in the production of each pair of each type of film, such as a-C:H, using both PECVD and PIIID. Optical properties, namely the refractive index, n, absorption coefficient, α, and optical gap, E Tauc , of these films were obtained via transmission spectra in the ultraviolet–visible near-infrared range (wavelengths from 300 to 3300 nm). Film hardness, elastic modulus and stiffness were obtained as a function of depth using nano-indentation. Surface energy values were calculated from liquid drop contact angle data. Film roughness and morphology were assessed using atomic force microscopy (AFM). The PIIID films were usually thinner and possessed higher refractive indices than the PECVD films. Determined refractive indices are consistent with literature values for similar types of films. Values of E Tauc were increased in the PIIID films compared to the PECVD films. An exception was the a-C:H:Si:O films, for which that obtained by PIIID was thicker and exhibited a decreased E Tauc . The mechanical properties – hardness, elastic modulus and stiffness – of films produced by PECVD and PIIID generally present small differences. An interesting effect is the increase in the hardness of a-C:H:Cl films from 1.0 to 3.0 GPa when ion implantation is employed. Surface energy correlates well with surface roughness. The implanted films are usually smoother than those obtained by PECVD.

Plasma Deposition and Characterization of Copper-doped Cobalt Oxide Nanocatalysts

Directory of Open Access Journals (Sweden)

Jacek TYCZKOWSKI

2013-09-01

Full Text Available A series of pure and copper-doped cobalt oxide films was prepared by plasma-enhanced metalorganic chemical vapor deposition (PEMOCVD. The effect of Cu-doping on the chemical structure and morphology of the deposited films was investigated. Raman and FTIR spectroscopies were used to characterize the chemical structure and morphology of the produced films. The bulk composition and homogeneity of the samples were investigated by energy dispersive X-ray microanalysis (EDX, and X-ray photoelectron spectroscopy (XPS was employed to assess the surface chemical composition of pure and doped materials. The obtained results permit to affirm that the PEMOCVD technique is a simple, versatile and efficient method for providing homogeneous layers of cobalt oxides with a different content of copper. It has been found that pure cobalt oxide films mainly contain Co3O4 in the form of nanoclusters whereas the films doped with Cu are much more complex, and CoOx (also Co3O4, mixed Co-Cu oxides and CuOx nanoclusters are detected in them. Preliminary catalytical tests show that Cu-doped cobalt oxide films allow to initiate catalytic combustion of n-hexane at a lower temperature compared to the pure cobalt oxide (Co3O4 films. From what has been stated above, the plasma-deposited thin films of Cu-doped cobalt oxides pave the way towards a new class of nanomaterials with interesting catalytic properties. DOI: http://dx.doi.org/10.5755/j01.ms.19.3.2320

Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane

International Nuclear Information System (INIS)

Yamaoka, K.; Yoshizako, Y.; Kato, H.; Tsukiyama, D.; Terai, Y.; Fujiwara, Y.

2006-01-01

Carbon-doped silicon oxide (SiOCH) thin films were deposited by room-temperature plasma-enhanced chemical vapor deposition (PECVD) using tetraethoxysilane (TEOS). The deposition rate and composition of the films strongly depended on radio frequency (RF) power. The films deposited at low RF power contained more CH n groups. The SiOCH films showed high etch rate and low refractive index in proportion to the carbon composition. The deposition with low plasma density and low substrate temperature is effective for SiOCH growth by PECVD using TEOS

Plasma deposition of antimicrobial coating on organic polymer

Science.gov (United States)

Rżanek-Boroch, Zenobia; Dziadczyk, Paulina; Czajkowska, Danuta; Krawczyk, Krzysztof; Fabianowski, Wojciech

2013-02-01

Organic materials used for packing food products prevent the access of microorganisms or gases, like oxygen or water vapor. To prolong the stability of products, preservatives such as sulfur dioxide, sulfites, benzoates, nitrites and many other chemical compounds are used. To eliminate or limit the amount of preservatives added to food, so-called active packaging is sought for, which would limit the development of microorganisms. Such packaging can be achieved, among others, by plasma modification of a material to deposit on its surface substances inhibiting the growth of bacteria. In this work plasma modification was carried out in barrier discharge under atmospheric pressure. Sulfur dioxide or/and sodium oxide were used as the coating precursors. As a result of bacteriological studies it was found that sulfur containing coatings show a 16% inhibition of Salmonella bacteria growth and 8% inhibition of Staphylococcus aureus bacteria growth. Sodium containing coatings show worse (by 10%) inhibiting properties. Moreover, films with plasma deposited coatings show good sealing properties against water vapor. Contribution to the Topical Issue "13th International Symposium on High Pressure Low Temperature Plasma Chemistry (Hakone XIII)", Edited by Nicolas Gherardi, Henryca Danuta Stryczewska and Yvan Ségui.

Modeling of Sheath Ion-Molecule Reactions in Plasma Enhanced Chemical Vapor Deposition of Carbon Nanotubes

Science.gov (United States)

Hash, David B.; Govindan, T. R.; Meyyappan, M.

2004-01-01

In many plasma simulations, ion-molecule reactions are modeled using ion energy independent reaction rate coefficients that are taken from low temperature selected-ion flow tube experiments. Only exothermic or nearly thermoneutral reactions are considered. This is appropriate for plasma applications such as high-density plasma sources in which sheaths are collisionless and ion temperatures 111 the bulk p!asma do not deviate significantly from the gas temperature. However, for applications at high pressure and large sheath voltages, this assumption does not hold as the sheaths are collisional and ions gain significant energy in the sheaths from Joule heating. Ion temperatures and thus reaction rates vary significantly across the discharge, and endothermic reactions become important in the sheaths. One such application is plasma enhanced chemical vapor deposition of carbon nanotubes in which dc discharges are struck at pressures between 1-20 Torr with applied voltages in the range of 500-700 V. The present work investigates The importance of the inclusion of ion energy dependent ion-molecule reaction rates and the role of collision induced dissociation in generating radicals from the feedstock used in carbon nanotube growth.

Influence of substrate pre-treatments by Xe{sup +} ion bombardment and plasma nitriding on the behavior of TiN coatings deposited by plasma reactive sputtering on 100Cr6 steel

Energy Technology Data Exchange (ETDEWEB)

Vales, S., E-mail: sandra.vales@usp.br [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Brito, P., E-mail: ppbrito@gmail.com [Pontifícia Universidade Católica de Minas Gerais (PUC-MG), Av. Dom José Gaspar 500, 30535-901 Belo Horizonte, MG (Brazil); Pineda, F.A.G., E-mail: pipe8219@gmail.com [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Ochoa, E.A., E-mail: abigail_ochoa@hotmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Droppa, R., E-mail: roosevelt.droppa@ufabc.edu.br [Universidade Federal do ABC (UFABC), Av. dos Estados, 5001, Santo André, SP CEP 09210-580 (Brazil); Garcia, J., E-mail: jose.garcia@sandvik.com [Sandvik Coromant R& D, Lerkrogsvägen 19, SE-12680, Stockholm (Sweden); Morales, M., E-mail: monieriz@gmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Alvarez, F., E-mail: alvarez@ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); and others

2016-07-01

In this paper the influence of pre-treating a 100Cr6 steel surface by Xe{sup +} ion bombardment and plasma nitriding at low temperature (380 °C) on the roughness, wear resistance and residual stresses of thin TiN coatings deposited by reactive IBAD was investigated. The Xe{sup +} ion bombardment was carried out using a 1.0 keV kinetic energy by a broad ion beam assistance deposition (IBAD, Kaufman cell). The results showed that in the studied experimental conditions the ion bombardment intensifies nitrogen diffusion by creating lattice imperfections, stress, and increasing roughness. In case of the combined pre-treatment with Xe{sup +} ion bombardment and subsequent plasma nitriding, the samples evolved relatively high average roughness and the wear volume increased in comparison to the substrates exposed to only nitriding or ion bombardment. - Highlights: • Effect of Xe ion bombardment and plasma nitriding on TiN coatings was investigated. • Xe ion bombardment with 1.0 KeV increases nitrogen retention in plasma nitriding. • 1.0 KeV ion impact energy causes sputtering, thus increasing surface roughness. • TiN coating wear is minimum after plasma nitriding due to lowest roughness.

Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

Energy Technology Data Exchange (ETDEWEB)

Ghrib, M., E-mail: mondherghrib@yahoo.fr [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Gaidi, M.; Ghrib, T.; Khedher, N. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Ben Salam, M. [L3M, Department of Physics, Faculty of Sciences of Bizerte, 7021 Zarzouna (Tunisia); Ezzaouia, H. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

2011-08-15

Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

International Nuclear Information System (INIS)

Ghrib, M.; Gaidi, M.; Ghrib, T.; Khedher, N.; Ben Salam, M.; Ezzaouia, H.

2011-01-01

Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

Directory of Open Access Journals (Sweden)

Chia-Man Chou

2017-07-01

Full Text Available We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD incorporated with radio-frequency (r.f.-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr. High oxygen vapor pressure (150 mTorr and low r.f. power (10 W are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.

Plasma-enhanced chemical vapor deposition of graphene on copper substrates

Directory of Open Access Journals (Sweden)

Nicolas Woehrl

2014-04-01

Full Text Available A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO2 substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm2. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

Ge/Si (100) heterojunction photodiodes fabricated from material grown by low-energy plasma-enhanced chemical vapour deposition

International Nuclear Information System (INIS)

Osmond, Johann; Isella, Giovanni; Chrastina, Daniel; Kaufmann, Rolf; Kaenel, Hans von

2008-01-01

We have fabricated a series of p-i-n Ge/Si heterojunction photodetectors with different thicknesses of the intrinsic Ge layer, different doping levels of the p and n layers and different diode diameters. Epitaxial Ge was deposited on Si(100) using low-energy plasma-enhanced CVD (LEPECVD) followed by cyclic annealing. Dark current values as low as 0.04 mA/cm 2 were achieved for 1 μm thick p-i-n photodiodes on lightly doped substrates at - 1 V bias, and external quantum efficiencies of 56% at 1.30 μm and 44% at 1.55 μm for 3 μm thick p + -i-n + photodiodes on highly doped substrates under 0.5 V reverse bias. For a 30 μm diameter diode a RC frequency of 21 GHz is obtained at a reverse bias of 1 V. With such characteristics, these diodes are attractive for telecommunication and optoelectronic applications

Plasma and Ion Assistance in Physical Vapor Deposition: AHistorical Perspective

Energy Technology Data Exchange (ETDEWEB)

Anders, Andre

2007-02-28

Deposition of films using plasma or plasma-assist can betraced back surprisingly far, namely to the 18th century for arcs and tothe 19th century for sputtering. However, only since the 1960s thecoatings community considered other processes than evaporation for largescale commercial use. Ion Plating was perhaps the first importantprocess, introducing vapor ionization and substrate bias to generate abeam of ions arriving on the surface of the growing film. Ratherindependently, cathodic arc deposition was established as an energeticcondensation process, first in the former Soviet Union in the 1970s, andin the 1980s in the Western Hemisphere. About a dozen various ion-basedcoating technologies evolved in the last decades, all characterized byspecific plasma or ion generation processes. Gridded and gridless ionsources were taken from space propulsion and applied to thin filmdeposition. Modeling and simulation have helped to make plasma and ionseffects to be reasonably well understood. Yet--due to the complex, oftennon-linear and non-equilibrium nature of plasma and surfaceinteractions--there is still a place for the experience plasma"sourcerer."

Experimental setup for producing tungsten coated graphite tiles using plasma enhanced chemical vapor deposition technique for fusion plasma applications

International Nuclear Information System (INIS)

Chauhan, Sachin Singh; Sharma, Uttam; Choudhary, K.K.; Sanyasi, A.K.; Ghosh, J.; Sharma, Jayshree

2013-01-01

Plasma wall interaction (PWI) in fusion grade machines puts stringent demands on the choice of materials in terms of high heat load handling capabilities and low sputtering yields. Choice of suitable material still remains a challenge and open topic of research for the PWI community. Carbon fibre composites (CFC), Beryllium (Be), and Tungsten (W) are now being considered as first runners for the first wall components of future fusion machines. Tungsten is considered to be one of the suitable materials for the job because of its superior properties than carbon like low physical sputtering yield and high sputter energy threshold, high melting point, fairly high re-crystallization temperature, low fuel retention capabilities, low chemical sputtering with hydrogen and its isotopes and most importantly the reparability with various plasma techniques both ex-situ and in-situ. Plasma assisted chemical vapour deposition is considered among various techniques as the most preferable technique for fabricating tungsten coated graphite tiles to be used as tokamak first wall and target components. These coated tiles are more favourable compared to pure tungsten due to their light weight and easier machining. A system has been designed, fabricated and installed at SVITS, Indore for producing tungsten coated graphite tiles using Plasma Enhanced Chemical Vapor Deposition (PE-CVD) technique for Fusion plasma applications. The system contains a vacuum chamber, a turbo-molecular pump, two electrodes, vacuum gauges, mass analyzer, mass flow controllers and a RF power supply for producing the plasma using hydrogen gas. The graphite tiles will be put on one of the electrodes and WF6 gas will be inserted in a controlled manner in the hydrogen plasma to achieve the tungsten-coating with WF6 dissociation. The system is integrated at SVITS, Indore and a vacuum of the order of 3*10 -6 is achieved and glow discharge plasma has been created to test all the sub-systems. The system design with

Plasma-enhanced chemical vapor deposition of aluminum oxide using ultrashort precursor injection pulses

NARCIS (Netherlands)

Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.

2012-01-01

An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the

Deposition of titanium nitride on Si(1 0 0) wafers using plasma focus

International Nuclear Information System (INIS)

Hussain, Tousif; Ahmad, R.; Khan, I.A.; Siddiqui, Jamil; Khalid, Nida; Bhatti, Arshad Saleem; Naseem, Shahzad

2009-01-01

Titanium nitride thin films were deposited on Si(1 0 0) substrates by using a low energy (2.3 KJ) Mather-type plasma focus device. The composition of the deposited films was characterized by X-ray diffraction (XRD). The crystallite size has strong dependence on the numbers of focus shots. The crystallinity of TiN thin films is found to increase with increasing the number of focus shots. The effect of different number of focus shots on micro structural changes of thin films was characterized by Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM). SEM results showed net-like structure for film deposited for 15 numbers of shots, which are elongated grains of Si 3 N 4 in amorphous form embedded into TiN crystals. The average surface roughness was calculated from AFM images of the thin films. These results indicated that the average surface roughness increased for films deposited with increased number of focus shots. The least crystallite size and roughness are observed for film deposited with 25 focus shots.

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

Science.gov (United States)

Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

2017-12-01

Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

Remote plasma-enhanced metalorganic chemical vapor deposition of aluminum oxide thin films

NARCIS (Netherlands)

Volintiru, I.; Creatore, M.; Hemmen, van J.L.; Sanden, van de M.C.M.

2008-01-01

Aluminum oxide films were deposited using remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/trimethylaluminum mixtures. Initial studies by in situ spectroscopic ellipsometry demonstrated that the aluminum oxide films deposited at temperatures

Hydrogen retention in carbon-tungsten co-deposition layer formed by hydrogen RF plasma

International Nuclear Information System (INIS)

Katayama, K.; Kawasaki, T.; Manabe, Y.; Nagase, H.; Takeishi, T.; Nishikawa, M.

2006-01-01

Carbon-tungsten co-deposition layers (C-W layers) were formed by sputtering method using hydrogen or deuterium RF plasma. The deposition rate of the C-W layer by deuterium plasma was faster than that by hydrogen plasma, where the increase of deposition rate of tungsten was larger than that of carbon. This indicates that the isotope effect on sputtering-depositing process for tungsten is larger than that for carbon. The release curve of hydrogen from the C-W layer showed two peaks at 400 deg. C and 700 deg. C. Comparing the hydrogen release from the carbon deposition layer and the tungsten deposition layer, it is considered that the increase of the release rate at 400 deg. C is affected by tungsten and that at 700 deg. C is affected by carbon. The obtained hydrogen retention in the C-W layers which have over 60 at.% of carbon was in the range between 0.45 and 0.16 as H/(C + W)

Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings

Directory of Open Access Journals (Sweden)

Januś M.

2015-06-01

Full Text Available Plasma Assisted Chemical Vapour Deposition (PA CVD method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy and improving of the wear resistance (in the case of PEEK substrate.

Plasma effects in aligned carbon nanoflake growth by plasma-enhanced hot filament chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China); Cheng, Q.J., E-mail: qijin.cheng@xmu.edu.cn [School of Energy Research, Xiamen University, Xiamen 361005 (China); Ostrikov, K. [Plasma Nanoscience Center Australia (PNCA), Manufacturing Flagship, Commonwealth Scientific and Industrial Research Organization, PO Box 218, Lindfield 2070, NSW (Australia); Institute for Future Environments and School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane 4000, QLD (Australia); Plasma Nanoscience, School of Physics, The University of Sydney, Sydney 2006, NSW (Australia)

2015-01-15

Highlights: • Plasma-specific effects in the growth of carbon nanoflakes (CNFs) are studied. • Electic field in the plasma sheath promotes separation of CNFs from the substrate. • The orentention of GNFs is related to the combined electic force and growth effects. • The high growth grates of aligned GNFs are plasma-related. - Abstract: Carbon nanofilms are directly grown on silicon substrates by plasma-enhanced hot filament chemical vapor deposition in methane environment. It is shown that the nanofilms are composed of aligned carbon nanoflakes by extensive investigation of experimental results of field emission scanning electron microscopy, micro-Raman spectroscopy and transmission electron microscopy. In comparison with the graphene-like films grown without plasmas, the carbon nanoflakes grow in an alignment mode and the growth rate of the films is increased. The effects of the plasma on the growth of the carbon nanofilms are studied. The plasma plays three main effects of (1) promoting the separation of the carbon nanoflakes from the silicon substrate, (2) accelerating the motion of hydrocarbon radicals, and (3) enhancing the deposition of hydrocarbon ions onto the substrate surface. Due to these plasma-specific effects, the carbon nanofilms can be formed from the aligned carbon nanoflakes with a high rate. These results advance our knowledge on the synthesis, properties and applications of graphene-based materials.

Plasma processing techniques for deposition of carbonic thin protective coatings on structural nuclear materials

International Nuclear Information System (INIS)

Andrei, V.; Oncioiu, G.; Coaca, E.; Rusu, O.; Lungu, C.

2009-01-01

Full text of publication follows: The production of nano-structured surface films with controlled properties is crucial for the development of materials necessary for the Advanced Systems for Nuclear Energy. Since the surface of materials is the zone through which materials interact with the environment, the surface science and surface engineering techniques plays an essential role in the understanding and control of the processes involved. Complex surface structures were developed on stainless steels used as structural nuclear materials: austenitic stainless steels based on Fe, austenitic steels with high content of Cr, ferrites resistant to corrosion, by various Plasma Processing methods which include: - Plasma Electrolytic (PE) treatments: the steel substrates were modified by nitriding and nitro-carburizing plasma diffusion treatments; - carbonic films deposition in Thermionic Vacuum Arc Plasma. The results of the characterization of surface structures obtained in various experimental conditions for improvement of the properties (corrosion resistance, hardness, wear properties) are reported: the processes and structures were characterized by correlation of the results of the complementary techniques: XPS, 'depth profiling', SEM, XRD, EIS. An overall description of the processes involved in the surface properties improvement, and some consideration about the new materials development for energy technologies are presented

Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

Science.gov (United States)

Oliveira, M. H.; Viana, G. A.; de Lima, M. M.; Cros, A.; Cantarero, A.; Marques, F. C.

2010-12-01

Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH4) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Oliveira, M. H. Jr.; Viana, G. A.; Marques, F. C.; Lima, M. M. Jr. de; Cros, A.; Cantarero, A.

2010-01-01

Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH 4 ) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition

International Nuclear Information System (INIS)

Jung, Hyunsoo; Choi, Hagyoung; Lee, Sanghun; Jeon, Heeyoung; Jeon, Hyeongtag

2013-01-01

In the present study, we investigated the gas and moisture permeation barrier properties of Al 2 O 3 films deposited on polyethersulfone films (PES) by capacitively coupled plasma (CCP) type Remote Plasma Atomic Layer Deposition (RPALD) at Radio Frequency (RF) plasma powers ranging from 100 W to 400 W in 100 W increments using Trimethylaluminum [TMA, Al(CH 3 ) 3 ] as the Al source and O 2 plasma as the reactant. To study the gas and moisture permeation barrier properties of 100-nm-thick Al 2 O 3 at various plasma powers, the Water Vapor Transmission Rate (WVTR) was measured using an electrical Ca degradation test. WVTR decreased as plasma power increased with WVTR values for 400 W and 100 W of 2.6 × 10 −4 gm −2 day −1 and 1.2 × 10 −3 gm −2 day −1 , respectively. The trends for life time, Al-O and O-H bond, density, and stoichiometry were similar to that of WVTR with improvement associated with increasing plasma power. Further, among plasma power ranging from 100 W to 400 W, the highest power of 400 W resulted in the best moisture permeation barrier properties. This result was attributed to differences in volume and amount of ion and radical fluxes, to join the ALD process, generated by O 2 plasma as the plasma power changed during ALD process, which was determined using a plasma diagnosis technique called the Floating Harmonic Method (FHM). Plasma diagnosis by FHM revealed an increase in ion flux with increasing plasma power. With respect to the ALD process, our results indicated that higher plasma power generated increased ion and radical flux compared with lower plasma power. Thus, a higher plasma power provides the best gas and moisture permeation barrier properties

Characterisation by optical spectroscopy of a plasma of depositions of thins layers

International Nuclear Information System (INIS)

Chouan, Yannick

1984-01-01

This research thesis reports a work which, by correlating emission and absorption spectroscopic measurements with properties of deposited thin layers, aimed at being a complement to works undertaken by a team in charge of the realisation of a flat screen. In a first part, the author reports the study of a cathodic pulverisation of a silicon target. He describes the experimental set-up, presents correlations obtained between plasma electric properties (target self-polarisation voltage), emission spectroscopic measurements (line profile and intensity) and absorption spectroscopic measurements (density of metastables), and the composition of deposited thin layers for two reactive pulverisation plasmas (Ar-H_2 and Ar-CH_4). The second part addresses the relationship between experimental conditions and spectroscopic characteristics (emission and absorption lines, excitation and rotation temperature) of a He-SiH_4 plasma. The author also determined the most adapted spectroscopic measurements to the 'control' of deposition, and which result in an optimisation of electronic properties and of the deposition rate for the hydrogenated amorphous silicon. The third part reports the characterisation of depositions. Electric and optic measurements are reported. Then, for both deposition techniques, the author relates the influence of experimental conditions to deposition properties and to spectroscopic diagnosis. The author finally presents static characteristics of a thin-layer-based transistor

Fundamental processes of fuel removal by cyclotron frequency range plasmas and integral scenario for fusion application studied with carbon co-deposits

Energy Technology Data Exchange (ETDEWEB)

Möller, S., E-mail: s.moeller@fz-juelich.de [Forschungszentrum Jülich GmbH, Institut für Energie- und Klimaforschung – Plasmaphysik, Partner of the Trilateral Euregio Cluster (TEC), 52425 Jülich (Germany); Wauters, T. [Laboratory for Plasma Physics, ERM/KMS, TEC Partner, 1000 Brussels (Belgium); Kreter, A. [Forschungszentrum Jülich GmbH, Institut für Energie- und Klimaforschung – Plasmaphysik, Partner of the Trilateral Euregio Cluster (TEC), 52425 Jülich (Germany); Petersson, P.; Carrasco, A.G. [Fusion Plasma Physics, KTH Royal Institute of Technology, Teknikringen 31, 10044 Stockholm (Sweden)

2015-08-15

Plasma impact removal using radio frequency heated plasmas is a candidate method to control the co-deposit related tritium inventory in fusion devices. Plasma parameters evolve according to the balance of input power to losses (transport, radiation, collisions). Material is sputtered by the ion fluxes with impact energies defined by the plasma sheath. H{sub 2}, D{sub 2} and {sup 18}O{sub 2} plasmas are produced in the carbon limiter tokamak TEXTOR. Pre-characterised a-C:D layers are exposed to study local removal rates. The D{sub 2} plasma exhibits the highest surface release rate of 5.7 ± 0.9 ∗ 10{sup 19} D/m{sup 2}s. Compared to this the rate of the O{sub 2} plasma is 3-fold smaller due to its 11-fold lower ion flux density. Re-deposition of removed carbon is observed, indicating that pumping and ionisation are limiting the removal in TEXTOR. Presented models can explain the observations and allow tailoring removal discharges. An integral application scenario using ICWC and thermo-chemical removal is presented, allowing to remove 700 g T from a-C:DT co-deposits in 20 h with fusion compatible wall conditions using technical specifications similar to ITER.

A new thin film deposition process by cathodic plasma electrolysis

International Nuclear Information System (INIS)

Paulmier, T.; Kiriakos, E.; Bell, J.; Fredericks, P.

2004-01-01

Full text: A new technique, called atmospheric pressure plasma deposition (APPD), has been developed since a few years for the deposition of carbon and DLC, Titanium or Silicon films on metal and metal alloys substrates. A high voltage (2kV) is applied in a liquid electrolytic solution between an anode and a cathode, both electrodes being cylindrical: a glow discharge is then produced and confined at the vicinity of the cathode. The physic of the plasma in the electrolytic solution near the cathode is very different form the other techniques of plasma deposition since the pressure is here close to the atmospheric pressure. We describe here the different physico-chemical processes occurring during the process. In this cathodic process, the anodic area is significantly larger than the cathode area. In a first step, the electrolytic solution is heated by Joule effect induced by the high voltage between the electrodes. Due to the high current density, the vaporization of the solution occurs near the cathode: a large amount of bubbles are produced which are stabilized at the electrode by hydrodynamic and electromagnetic forces, forming a vapour sheath. The electric field and voltage drop are then concentrated in this gas envelope, inducing the ionization of the gas and the ignition of a glow discharge at the surface of the material. This plasma induces the formation of ionized and reactive species which diffuse and are accelerated toward the cathode. These excited species are the precursors for the formation of the deposition material. At the same time, the glow discharge interacts with the electrolyte solution inducing also ionization, convection and polymerization processes in the liquid: the solution is therefore a second source of the deposition material. A wide range of films have been deposited with a thickness up to 10 micrometers. These films have been analyzed by SEM and Raman spectroscopy. The electrolytic solution has been characterized by GC-MS and the

Ion enhanced deposition by dual titanium and acetylene plasma immersion ion implantation

Science.gov (United States)

Zeng, Z. M.; Tian, X. B.; Chu, P. K.

2003-01-01

Plasma immersion ion implantation and deposition (PIII-D) offers a non-line-of-sight fabrication method for various types of thin films on steels to improve the surface properties. In this work, titanium films were first deposited on 9Cr18 (AISI440) stainless bearing steel by metal plasma immersion ion implantation and deposition (MePIII-D) using a titanium vacuum arc plasma source. Afterwards, carbon implantation and carbon film deposition were performed by acetylene (C2H2) plasma immersion ion implantation. Multiple-layered structures with superior properties were produced by conducting Ti MePIII-D + C2H2 PIII successively. The composition and structure of the films were investigated employing Auger electron spectroscopy and Raman spectroscopy. It is shown that the mixing for Ti and C atoms is much better when the target bias is higher during Ti MePIII-D. A top diamond-like carbon layer and a titanium oxycarbide layer are formed on the 9Cr18 steel surface. The wear test results indicate that this dual PIII-D method can significantly enhance the wear properties and decrease the surface friction coefficient of 9Cr18 steel.

Ion enhanced deposition by dual titanium and acetylene plasma immersion ion implantation

International Nuclear Information System (INIS)

Zeng, Z.M.; Tian, X.B.; Chu, P.K.

2003-01-01

Plasma immersion ion implantation and deposition (PIII-D) offers a non-line-of-sight fabrication method for various types of thin films on steels to improve the surface properties. In this work, titanium films were first deposited on 9Cr18 (AISI440) stainless bearing steel by metal plasma immersion ion implantation and deposition (MePIII-D) using a titanium vacuum arc plasma source. Afterwards, carbon implantation and carbon film deposition were performed by acetylene (C 2 H 2 ) plasma immersion ion implantation. Multiple-layered structures with superior properties were produced by conducting Ti MePIII-D + C 2 H 2 PIII successively. The composition and structure of the films were investigated employing Auger electron spectroscopy and Raman spectroscopy. It is shown that the mixing for Ti and C atoms is much better when the target bias is higher during Ti MePIII-D. A top diamond-like carbon layer and a titanium oxycarbide layer are formed on the 9Cr18 steel surface. The wear test results indicate that this dual PIII-D method can significantly enhance the wear properties and decrease the surface friction coefficient of 9Cr18 steel

Effect of the ions energy in the physical properties of thin films of CNx deposited by laser ablation

International Nuclear Information System (INIS)

Arrieta C, A.; Escobar A, L.; Camps C, E.; Romero H, S.; Mejia H, J.A.; Gonzalez, P.R.; Camacho L, M.A.

2004-01-01

Thin films of carbon nitride were deposited using the laser ablation technique starting from a carbon target in atmosphere of N 2 , varying the fluence of the laser and maintaining fixed the distance target-substrate. It was diagnosed the formed plasma, being determined the average kinetic energy of the ions present in the plasma, as well as their density. The characterization of the deposited films includes composition, optical gap, chemical structure and microstructure. They were related the properties of the layers with the plasma parameters with the purpose of clarifying that paper plays in the growth of the layer. Additionally it was studied their thermoluminescent response to being excited with UV radiation. (Author)

Deposition of fluorocarbon films by Pulsed Plasma Thruster on the anode side

International Nuclear Information System (INIS)

Zhang, Rui; Zhang, Daixian; Zhang, Fan; He, Zhen; Wu, Jianjun

2013-01-01

Fluorocarbon thin films were deposited by Pulsed Plasma Thruster at different angles on the anode side of the thruster. Density and velocity of the plasma in the plume of the Pulsed Plasma Thruster were determined using double and triple Langmuir probe apparatus respectively. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), scanning probe microscope (SPM) and UV–vis spectrometer. Low F/C ratio (0.64–0.86) fluorocarbon films are deposited. The F/C ratio decreases with angle increasing from 0 degree to 30 degree; however it turns to increase with angle increasing from 45 degree to 90 degree. The films deposited at center angles appear rougher compared with that prepared at angles beyond 45 degree. These films basically show having strong absorption properties for wavelength below 600 nm and having enhanced reflective characteristics. Due to the influence of the chemical composition and the surface morphology of the films, the optical properties of these films also show significant angular dependence.

Energy confinement and MHD activity in shaped TCV plasmas with localised electron cyclotron heating

International Nuclear Information System (INIS)

Pochelon, A.; Alberti, S.; Angioni, C.

2001-01-01

Confinement in TCV (Tokamak a Configuration Variable) EC heated discharges is studied as a function of plasma shape, i.e. as a function of elongation 1.1<κ<2.15 and triangularity -0.65≤δ≤0.5. The electron energy confinement time is found to increase with elongation, in part due to the increase of plasma current with elongation. The beneficial effect of negative triangularities is most effective at low power and tends to reduce at the higher powers used. The large variety of sawtooth types observed in TCV for different power deposition locations from on axis to the q=1 region can be simulated with a model including a local power deposition, a growing m/n=1 island (convection and reconnection), plasma rotation and finite heat diffusivity across flux surfaces. (author)

Application of plasma deposition technology for nuclear fuel fabrication

International Nuclear Information System (INIS)

Jung, I. H.; Moon, J. S.; Park, H. S.; Song, K. C.; Lee, C. Y.; Kang, K. H.; Ryu, H. J.; Kim, H. S.; Yang, M. S.

2001-01-01

Yttria-stabilized-zirconia (m.p. 2670.deg. C), was deposited by induction plasma spraying system with a view to develop a new nuclear fuel fabrication technology. To fabricate the dense pellets, the spraying condition was optimized through the process parameters such as, chamber pressure, plasma plate power, powder spraying distance, sheath gas composition, probe position particle size and its morphology. The results with a 5mm thick deposit on rectangular planar graphite substrates showed 97.11% theoretical density, when the sheath gas flow rate was Ar/H 2 120/20 L/min, probe position 8cm, particle size-75 μm and spraying distance 22cm. The microstructure of YSZ deposit by ICP was lamellae and columnar perpendicular to the spraying direction. In the bottom part near the substrate, small equiaxed grains bounded in a layer. In the middle part, relatively regular size of columnar grains with excellent bonding each other were distinctive

Observation of non-uniform erosion and deposition phenomena on graphite after plasma exposure

International Nuclear Information System (INIS)

Hildebrandt, D.; Grote, H.; Schneider, W.; Wienhold, P.; Seggern, J. von

1999-01-01

The modifications of fine grain isotropic graphite surfaces after plasma exposure have been investigated using surface analysis techniques with high spatial resolution in area and depth. The samples are graphite target tiles of ASDEX-upgrade and coated graphite collector samples exposed for special erosion/deposition experiments in the divertor plasma of ASDEX-upgrade or in the scrape-off plasma of TEXTOR-94. In addition, a graphite sample was exposed to a low temperature, clean deuterium plasma to study the modifications of the surface morphology during plasma exposure. The results give clear indications of non-uniform erosion and deposition processes. The change of the surface morphology during these processes is discussed. (orig.)

Deposition of hybrid organic-inorganic composite coatings using an atmospheric plasma jet system.

Science.gov (United States)

Dembele, Amidou; Rahman, Mahfujur; Reid, Ian; Twomey, Barry; MacElroy, J M Don; Dowling, Denis P

2011-10-01

The objective of this study is to investigate the influence of alcohol addition on the incorporation of metal oxide nanoparticles into nm thick siloxane coatings. Titanium oxide (TiO2) nanoparticles with diameters of 30-80 nm were incorporated into an atmospheric plasma deposited tetramethylorthosilicate (TMOS) siloxane coating. The TMOS/TiO2 coating was deposited using the atmospheric plasma jet system known as PlasmaStream. In this system the liquid precursor/nanoparticle mixture is nebulised into the plasma. It was observed that prior to being nebulised the TiO2 particles agglomerated and settled over time in the TMOS/TiO2 mixture. In order to obtain a more stable nanoparticle/TMOS suspension the addition of the alcohols methanol, octanol and pentanol to this mixture was investigated. The addition of each of these alcohols was found to stabilise the nanoparticle suspension. The effect of the alcohol was therefore assessed with respect to the properties of the deposited coatings. It was observed that coatings deposited from TMOS/TiO2, with and without the addition of methanol were broadly similar. In contrast the coatings deposited with octanol and pentanol addition to the TMOS/TiO2 mixture were significantly thicker, for a given set of deposition parameters and were also more homogeneous. This would indicate that the alcohol precursor was incorporated into the plasma polymerised siloxane. The incorporation of the organic functionality from the alcohols was confirmed from FTIR spectra of the coatings. The difference in behaviour with alcohol type is likely to be due to the lower boiling point of methanol (65 degrees C), which is lower than the maximum plasma temperature measured at the jet orifice (77 degrees C). This temperature is significantly lower than the 196 degrees C and 136 degrees C boiling points of octanol and pentanol respectively. The friction of the coatings was determined using the Pin-on-disc technique. The more organic coatings deposited with

Tailored adhesion behavior of polyelectrolyte thin films deposited on plasma-treated poly(dimethylsiloxane) for functionalized membranes

Energy Technology Data Exchange (ETDEWEB)

Bassil, Joelle, E-mail: joelle.bassil@univ-lorraine.fr [Institut Jean Lamour (IJL), UMR CNRS 7198, Université de Lorraine, Parc de Saurupt CS50840, 54011 Nancy (France); Alem, Halima, E-mail: halima.alem@univ-lorraine.fr [Institut Jean Lamour (IJL), UMR CNRS 7198, Université de Lorraine, Parc de Saurupt CS50840, 54011 Nancy (France); Henrion, Gérard, E-mail: gerard.henrion@univ-lorraine.fr [Institut Jean Lamour (IJL), UMR CNRS 7198, Université de Lorraine, Parc de Saurupt CS50840, 54011 Nancy (France); Roizard, Denis, E-mail: denis.roizard@univ-lorraine.fr [Laboratoire Réactions et Génie des Procédés (LRGP), UMR CNRS 7274, ENSIC, Université de Lorraine, 1 rue Grandville, 54011 Nancy (France)

2016-04-30

Graphical abstract: - Highlights: • The surface of PDMS membrane was first modified by Ar/O{sub 2} plasma to increase its surface energy. • Subsequently, a homogeneous multilayer of the well-known couple of polyelectrolyte PDADMAC/PSS was deposited on the plasma treated PDMS. • The relation between the parameters of the modification processes and the morphology, wettability, structure and adhesion of the polyelectrolytes layers based PDMS membranes is investigated and enlightened. - Abstract: Completely homogenous films formed via the layer-by-layer assembly of poly(diallyldimethylammonium chloride) (PDADMAC) and the poly(styrene sulfonate) were successfully obtained on plasma-treated poly(dimethylsiloxane) (PDMS) substrates. To modify the hydrophobicity of the PDMS surface, a cold plasma treatment was previously applied to the membrane, which led to the creation of hydrophilic groups on the surface of the membrane. PDMS wettability and surface morphology were successfully correlated with the plasma parameters. A combination of contact angle measurements, scanning electron microscopy (SEM) and atomic force microscopy (AFM) analysis was used to demonstrate that homogeneous and hydrophilic surfaces could be achieved on PDMS cold-plasma-treated membranes. The stability of the assembled PEL layer on the PDMS was evaluated using a combination of pull-off testing and X-ray photoelectron spectroscopy (XPS), which confirmed the relevance of a plasma pre-treatment as the adhesion of the polyelectrolyte multilayers was greatly enhanced when the deposition was completed on an activated PDMS surface at 80 W for 5 min.

Evolution of α-particle distribution in burning plasmas including energy dependent α-transport effects

International Nuclear Information System (INIS)

Kamelander, G.; Sigmar, D.; Woloch, F.

1991-09-01

This report resumes the essential results of a common OEFZS/MIT (Plasma Fusion Center) project to investigate fusion alpha transport. A computer code has been developed going beyond standard FOKKER-PLANCK-codes assuming that the fusion products give their energy to the plasma on the place of their birth. The present transport code admits the calculation of the α-distribution function. By means of the distribution function the energy deposition rates are calculated. The time-evolution of the α-distribution function has been evaluated for an ignited plasma. A description of the transport code, of the subroutines and of the input data as well as a listing is enclosed to this report. (Authors)

Diamondlike carbon deposition on plastic films by plasma source ion implantation

CERN Document Server

Tanaka, T; Shinohara, M; Takagi, T

2002-01-01

Application of pulsed high negative voltage (approx 10 mu s pulse width, 300-900 pulses per second) to a substrate is found to induce discharge, thereby increasing ion current with an inductively coupled plasma source. This plasma source ion beam implantation (PSII) technique is investigated for the pretreatment and deposition of diamond-like carbon (DLC) thin layer on polyethylene terepthalate (PET) film. Pretreatment of PET with N sub 2 and Ar plasma is expected to provide added barrier effects when coupled with DLC deposition, with possible application to fabrication of PET beverage bottles. PSII treatment using N sub 2 and Ar in separate stages is found to change the color of the PET film, effectively increasing near-ultraviolet absorption. The effects of this pretreatment on the chemical bonding of C, H, and O are examined by x-ray photoelectron spectroscopy (XPS). DLC thin film was successfully deposited on the PET film. The surface of the DLC thin layer is observed to be smooth by scanning electron mic...

Collisional particle-in-cell modeling for energy transport accompanied by atomic processes in dense plasmas

Energy Technology Data Exchange (ETDEWEB)

Mishra, R.; Beg, F. N. [Center for Energy Research, University of California, San Diego, California 92093 (United States); Leblanc, P.; Sentoku, Y. [Department of Physics, University of Nevada, Reno, Nevada 89557 (United States); Wei, M. S. [General Atomics, San Diego, California 92121 (United States)

2013-07-15

Fully relativistic collisional Particle-in-Cell (PIC) code, PICLS, has been developed to study extreme energy density conditions produced in intense laser-solid interaction. Recent extensions to PICLS, such as the implementation of dynamic ionization, binary collisions in a partially ionized plasma, and radiative losses, enhance the efficacy of simulating intense laser plasma interaction and subsequent energy transport in resistive media. Different ionization models are introduced and benchmarked against each other to check the suitability of the model. The atomic physics models are critical to determine the energy deposition and transport in dense plasmas, especially when they consist of high Z (atomic number) materials. Finally we demonstrate the electron transport simulations to show the importance of target material on fast electron dynamics.

A simple method to deposit palladium doped SnO2 thin films using plasma enhanced chemical vapor deposition technique

International Nuclear Information System (INIS)

Kim, Young Soon; Wahab, Rizwan; Shin, Hyung-Shik; Ansari, S. G.; Ansari, Z. A.

2010-01-01

This work presents a simple method to deposit palladium doped tin oxide (SnO 2 ) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl 4 ) was used as precursor and oxygen (O 2 , 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C 5 HF 6 O 2 ) 2 ) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd 2 Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 mΩ cm as a function of deposition temperature from 400 to 600 deg. C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature.

Nanostructure and optical properties of CeO{sub 2} thin films obtained by plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Barreca, D.; Bruno, G.; Gasparotto, A.; Losurdo, M.; Tondello, E

2003-12-15

In the present study, Spectroscopic Ellipsometry (SE) is used to investigate the interrelations between nanostructure and optical properties of CeO{sub 2} thin films deposited by Plasma-Enhanced Chemical Vapor Deposition (PE-CVD). The layers were synthesized in Ar and Ar-O{sub 2} plasmas on Si(100) substrates at temperatures lower than 300 deg. C. Both the real and imaginary parts of the complex dielectric functions and, subsequently, the optical constants of the films are derived up to 6.0 eV photon energy. Particular attention is devoted to the influence of synthesis conditions and sample properties on the optical response, taking into account the effects of surface roughness and SiO{sub 2} interface layer on Si.

Properties of a-C:H:O plasma polymer films deposited from acetone vapors

Energy Technology Data Exchange (ETDEWEB)

Drabik, M., E-mail: martin.drabik@gmail.com [Empa, Swiss Federal Laboratories for Materials Science and Technology, Lerchenfeldstrasse 5, 9014 St. Gallen (Switzerland); Celma, C. [Empa, Swiss Federal Laboratories for Materials Science and Technology, Lerchenfeldstrasse 5, 9014 St. Gallen (Switzerland); Kousal, J.; Biederman, H. [Charles University in Prague, Faculty of Mathematics and Physics, Department of Macromolecular Physics, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Hegemann, D. [Empa, Swiss Federal Laboratories for Materials Science and Technology, Lerchenfeldstrasse 5, 9014 St. Gallen (Switzerland)

2014-12-31

To gain insight into the deposition and stability of oxygen-containing plasma polymer films, the properties of amorphous oxygenated hydrocarbon (a-C:H:O) plasma polymer coatings deposited from acetone vapors under various experimental conditions are investigated. Apart from the discharge power, the influence of the reactive carbon dioxide (CO{sub 2}) gas on the structure of the resulting films is studied. It is found by characterization using X-ray Photoelectron Spectroscopy and Fourier-Transform Infrared Spectroscopy that the experimental conditions particularly influence the amount of oxygen in the deposited a-C:H:O plasma polymer films. The O/C elemental ratio increases with increasing amount of CO{sub 2} in the working gas mixture (up to 0.2 for 24 sccm of CO{sub 2} at 30 W) and decreases with increasing RF discharge power (down to 0.17 for 50 W). Furthermore, the nature of bonds between the oxygen and carbon atoms has been examined. Only low amounts of double and triple bonded carbon are observed. This has a particular influence on the aging of the plasma polymer films which is studied both in ambient air and in distilled water for up to 4 months. Overall, stable a-C:H:O plasma polymer films are deposited comprising low amounts (up to about 5%) of ester/carboxyl groups. - Highlights: • Hydrocarbon plasma polymer films with variable oxygen content can be prepared. • Stable oxygenated hydrocarbon plasma polymers contain max 5% of ester/carboxyl groups. • Acetone-derived plasma polymer films can be used as permanent hydrophilic surfaces.

Microwave plasma deposition of diamond like carbon coatings

Indian Academy of Sciences (India)

Abstract. The promising applications of the microwave plasmas have been appearing in the fields of chemical processes and semiconductor manufacturing. Applications include surface deposition of all types including diamond/diamond like carbon (DLC) coatings, etching of semiconductors, promotion of organic reactions, ...

WC-Co coatings deposited by the electro-thermal chemical spray method

Energy Technology Data Exchange (ETDEWEB)

Zhitomirsky, V.N. [Tel Aviv Univ. (Israel). Faculty of Engineering; Wald, S.; Rabani, L.; Zoler, D. [Propulsion Physics Division, SOREQ NRC, 81800, Yavne (Israel); Factor, M.; Roman, I. [School of Applied Sciences, The Hebrew University, 91904, Jerusalem (Israel); Cuperman, S.; Bruma, C. [School of Physics and Astronomy, Tel-Aviv University, 69978, Tel-Aviv (Israel)

2000-10-02

A novel thermal spray technology - an electro-thermal chemical spray (ETCS) for producing hard coatings is presented. The experimental coating apparatus consists of a machine gun barrel, a cartridge containing the coating material in powder form, a solid propellant, and a plasma ignition system. The plasma ignition system produces plasma in pulsed mode to ignite the solid propellant. On ignition, the drag force exerted by the combustion gases accelerates the powder particles towards the substrate. Using the ETCS technique, the process of single-shot WC-Co coating deposition on stainless steel substrate was studied. The influence of process parameters (plasma energy, mass of the solid propellant and the coated powder, distance between the gun muzzle and the substrate) on the coating structure and some of its properties were investigated. It was shown that ECTS technique effectively deposited the WC-Co coating with deposition thicknesses of 100-200 {mu}m per shot, while deposition yield of {proportional_to}70% was attained. The WC-Co coatings consisted of carbide particles distributed in amorphous matrix. The powder particle velocity was found to depend on the solid propellant mass and was weakly dependent on the plasma energy, while the particle processing temperature was strongly dependent on the plasma energy and almost independent of the solid propellant mass. Whilst increasing the solid propellant mass from 5 to 7 g, the deposition rate and yield correspondingly increased. When increasing the plasma energy, the temperature of the powder particles increased, the average carbide particle size decreased and their shape became more rounded. The deposition yield and microhardness at first increased and then achieved saturation by increasing the plasma energy. (orig.)

Development of a high energy pulsed plasma simulator for the study of liquid lithium trenches

Energy Technology Data Exchange (ETDEWEB)

Jung, S., E-mail: jung73@illinois.edu [Department of Nuclear, Plasma, and Radiological Engineering, University of Illinois at Urbana-Champaign, Urbana 61801 (United States); Christenson, M.; Curreli, D. [Department of Nuclear, Plasma, and Radiological Engineering, University of Illinois at Urbana-Champaign, Urbana 61801 (United States); Bryniarski, C. [Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana 61801 (United States); Andruczyk, D.; Ruzic, D.N. [Department of Nuclear, Plasma, and Radiological Engineering, University of Illinois at Urbana-Champaign, Urbana 61801 (United States)

2014-12-15

Highlights: • A pulse device for a liquid lithium trench study is developed. • It consists of a coaxial plasma gun, a theta pinch, and guiding magnets. • A large energy enhancement is observed with the use of the plasma gun. • A further increase in energy and velocity is observed with the theta pinch. - Abstract: To simulate detrimental events in a tokamak and provide a test-stand for a liquid-lithium infused trench (LiMIT) device [1], a pulsed plasma source utilizing a theta pinch in conjunction with a coaxial plasma accelerator has been developed. The plasma is characterized using a triple Langmuir probe, optical methods, and a calorimeter. Clear advantages have been observed with the application of a coaxial plasma accelerator as a pre-ionization source. The experimental results of the plasma gun in conjunction with the existing theta pinch show a significant improvement from the previous energy deposition by a factor of 14 or higher, resulting in a maximum energy and heat flux of 0.065 ± 0.002 MJ/m{sup 2} and 0.43 ± 0.01 GW/m{sup 2}. A few ways to further increase the plasma heat flux for LiMIT experiments are discussed.

Development of a high energy pulsed plasma simulator for the study of liquid lithium trenches

International Nuclear Information System (INIS)

Jung, S.; Christenson, M.; Curreli, D.; Bryniarski, C.; Andruczyk, D.; Ruzic, D.N.

2014-01-01

Highlights: • A pulse device for a liquid lithium trench study is developed. • It consists of a coaxial plasma gun, a theta pinch, and guiding magnets. • A large energy enhancement is observed with the use of the plasma gun. • A further increase in energy and velocity is observed with the theta pinch. - Abstract: To simulate detrimental events in a tokamak and provide a test-stand for a liquid-lithium infused trench (LiMIT) device [1], a pulsed plasma source utilizing a theta pinch in conjunction with a coaxial plasma accelerator has been developed. The plasma is characterized using a triple Langmuir probe, optical methods, and a calorimeter. Clear advantages have been observed with the application of a coaxial plasma accelerator as a pre-ionization source. The experimental results of the plasma gun in conjunction with the existing theta pinch show a significant improvement from the previous energy deposition by a factor of 14 or higher, resulting in a maximum energy and heat flux of 0.065 ± 0.002 MJ/m 2 and 0.43 ± 0.01 GW/m 2 . A few ways to further increase the plasma heat flux for LiMIT experiments are discussed

Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

Science.gov (United States)

Jagannathan, Basanth

Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

New system for vacuum deposition of refractory materials using an atmospheric-pressure inductively coupled plasma

International Nuclear Information System (INIS)

Merkle, B.D.; Kniseley, R.N.; Schmidt, F.A.

1987-01-01

We have successfully developed a technique utilizing an atmospheric-pressure inductively coupled plasma combined with a low-pressure deposition chamber for deposition of thin films. The equipment and method of operation are discussed. Refractory powders (Nb and Y 2 O 3 ) were injected into the plasma and deposited as Nb and substoichiometric yttrium oxide, YO/sub 1.49/, onto Fe and Cu substrates. The substoichiometric yttrium oxide deposit adhered well to the Fe and Cu substrates, while the Nb deposit adhered well to the Fe only. The Nb deposit on the Cu substrate flaked and peeled probably because of stresses induced from the thermal expansion mismatch between the Nb and Cu. Further studies will be undertaken to better understand the processes occurring in this type of plasma-coating system in order to optimize the instrumental parameters for particular coating applications

Modeling high-density-plasma deposition of SiO{sub 2} in SiH{sub 4}/O{sub 2}/Ar

Energy Technology Data Exchange (ETDEWEB)

Meeks, E.; Larson, R.S. [Sandia National Labs., Livermore, CA (United States); Ho, P.; Apblett, C. [Sandia National Labs., Albuquerque, NM (United States); Han, S.M.; Edelberg, E.; Aydil, E. [Univ. of California, Santa Barbara, CA (United States)

1997-03-01

The authors have compiled sets of gas-phase and surface reactions for use in modeling plasma-enhanced chemical vapor deposition of silicon dioxide from silane, oxygen and argon gas mixtures in high-density-plasma reactors. They have applied the reaction mechanisms to modeling three different kinds of high-density plasma deposition chambers, and tested them by comparing model predictions to a variety of experimental measurements. The model simulates a well mixed reactor by solving global conservation equations averaged across the reactor volume. The gas-phase reaction mechanism builds from fundamental electron-impact cross section data available in the literature, and also includes neutral-molecule, ion-ion, and ion-molecule reaction paths. The surface reaction mechanism is based on insight from attenuated total-reflection Fourier-transform infrared spectroscopy experiments. This mechanism describes the adsorption of radical species on an oxide surface, ion-enhanced reactions leading to species desorption from the surface layer, radical abstractions competing for surface sites, and direct energy-dependent ion sputtering of the oxide material. Experimental measurements of total ion densities, relative radical densities as functions of plasma operating conditions, and net deposition-rate have been compared to model predictions to test and modify the chemical kinetics mechanisms. Results show good quantitative agreement between model predictions and experimental measurements.

Factors affecting the adhesion of microwave plasma deposited siloxane films on polycarbonate

International Nuclear Information System (INIS)

Muir, B.W.; Thissen, H.; Simon, G.P.; Murphy, P.J.; Griesser, H.J.

2006-01-01

The effects of a radiofrequency oxygen plasma pretreatment and residual water content in the substrate on the adhesion of microwave plasma deposited tetramethyldisiloxane thin films on Bisphenol-A polycarbonate (BPA-PC) were investigated. Samples were characterised using a crosshatch adhesion test, optical and electron microscopy, and X-ray photoelectron spectroscopy. It was found that the use of a low power (5 W) and low treatment time (0.1 s) oxygen plasma can improve adhesion while greater treatment times (1-30 s) and higher oxygen plasma powers (40 W) resulted in a decreased level of adhesion. In addition, it was shown that a BPA-PC water content greater than 90 ppm resulted in rapid adhesion failure of deposited films at the substrate-plasma polymer interface during outdoor weathering. All films degraded substantially when exposed to environmental weathering, indicating ageing reactions within the plasma polymer films themselves, and at the bulk polymer-coating interface

Developing a plasma focus research training system for the fusion energy age

International Nuclear Information System (INIS)

Lee, S.

2014-01-01

The 3 kJ UNU/ICTP Plasma Focus Facility is the most significant device associated with the AAAPT (Asian African Association for Plasma Training). In original and modified/upgraded form it has trained generations of plasma focus (PF) researchers internationally, producing many PhD theses and peer-reviewed papers. The Lee Model code was developed for the design of this PF. This code has evolved to cover all PF machines for design, interpretation and optimization, for derivation of radiation scaling laws; and to provide insights into yield scaling limitations, radiative collapse, speed-enhanced and current-stepped PF variants. As example of fresh perspectives derivable from this code, this paper presents new results on energy transfers of the axial and radial phases of generalized PF devices. As the world moves inexorably towards the Fusion Energy Age it becomes ever more important to train plasma fusion researchers. A recent workshop in Nepal shows that demand for such training continues. Even commercial project development consultants are showing interest. We propose that the AAAPT-proven research package be upgraded, by modernizing the small PF for extreme modes of operation, switchable from the typical strong-focus mode to a slow-mode which barely pinches, thus producing a larger, more uniform plasma stream with superior deposition properties. Such a small device would be cost-effective and easily duplicated, and have the versatility of a range of experiments from intense multi-radiation generation and target damage studies to superior advanced-materials deposition. The complementary code is used to reference experiments up to the largest existing machine. This is ideal for studying machine limitations and scaling laws and to suggest new experiments. Such a modernized versatile PF machine complemented by the universally versatile code would extend the utility of the PF experience; so that AAAPT continues to provide leadership in pulsed plasma research training in

Plasma enhanced atomic layer deposited MoOx emitters for silicon heterojunction solar cells

OpenAIRE

Ziegler, J.; Mews, M.; Kaufmann, K.; Schneider, T.; Sprafke, A.N.; Korte, L.; Wehrsporn, R.B

2015-01-01

A method for the deposition of molybdenum oxide MoOx with high growth rates at temperatures below 200 C based on plasma enhanced atomic layer deposition is presented. The stoichiometry of the overstoichiometric MoOx films can be adjusted by the plasma parameters. First results of these layers acting as hole selective contacts in silicon heterojunction solar cells are presented and discussed

Plasma exposure behavior of re-deposited tungsten on structural materials of fusion reactors

Energy Technology Data Exchange (ETDEWEB)

Xu, Yu-Ping; Wang, Jing [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Science Island Branch of Graduate School, University of Science & Technology of China, Hefei 230031 (China); Zhou, Hai-Shan, E-mail: haishanzhou@ipp.ac.cn [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Liu, Feng [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Li, Zeng-De [General Research Institute for Nonferrous Metals, Beijing 100088 (China); Li, Xiao-Chun; Lu, Tao [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Liu, Hao-Dong [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Science Island Branch of Graduate School, University of Science & Technology of China, Hefei 230031 (China); Ding, Fang; Mao, Hong-Min; Zhao, Ming-Zhong [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Lin, Chen-Guang [General Research Institute for Nonferrous Metals, Beijing 100088 (China); Luo, Guang-Nan [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Science Island Branch of Graduate School, University of Science & Technology of China, Hefei 230031 (China); Hefei Center for Physical Science and Technology, Hefei 230031 (China); Hefei Science Center of Chinese Academy of Science, Hefei 230027 (China)

2017-05-15

To evaluate the effects of re-deposited tungsten (W) on the surface modification and hydrogen isotope retention behavior of fusion structural materials, the plasma exposure behavior of re-deposited W samples prepared by magnetron sputtering on the F82H steel, the V-5Cr-5Ti alloy as well as bare substrate samples was investigated. All the samples were exposed to 367 shots of deuterium plasmas in the 2015 spring EAST campaign. After the plasma exposure, large area of W layer was exfoliated, while big blisters were found at the interface between the remaining W layer and the substrate materials. The deuterium retention behavior of the samples with re-deposited W layer was characterized by thermal desorption spectroscopy and compared with the bare substrate samples.

Role of plasma enhanced atomic layer deposition reactor wall conditions on radical and ion substrate fluxes

Energy Technology Data Exchange (ETDEWEB)

Sowa, Mark J., E-mail: msowa@ultratech.com [Ultratech/Cambridge NanoTech, 130 Turner Street, Building 2, Waltham, Massachusetts 02453 (United States)

2014-01-15

Chamber wall conditions, such as wall temperature and film deposits, have long been known to influence plasma source performance on thin film processing equipment. Plasma physical characteristics depend on conductive/insulating properties of chamber walls. Radical fluxes depend on plasma characteristics as well as wall recombination rates, which can be wall material and temperature dependent. Variations in substrate delivery of plasma generated species (radicals, ions, etc.) impact the resulting etch or deposition process resulting in process drift. Plasma enhanced atomic layer deposition is known to depend strongly on substrate radical flux, but film properties can be influenced by other plasma generated phenomena, such as ion bombardment. In this paper, the chamber wall conditions on a plasma enhanced atomic layer deposition process are investigated. The downstream oxygen radical and ion fluxes from an inductively coupled plasma source are indirectly monitored in temperature controlled (25–190 °C) stainless steel and quartz reactors over a range of oxygen flow rates. Etch rates of a photoresist coated quartz crystal microbalance are used to study the oxygen radical flux dependence on reactor characteristics. Plasma density estimates from Langmuir probe ion saturation current measurements are used to study the ion flux dependence on reactor characteristics. Reactor temperature was not found to impact radical and ion fluxes substantially. Radical and ion fluxes were higher for quartz walls compared to stainless steel walls over all oxygen flow rates considered. The radical flux to ion flux ratio is likely to be a critical parameter for the deposition of consistent film properties. Reactor wall material, gas flow rate/pressure, and distance from the plasma source all impact the radical to ion flux ratio. These results indicate maintaining chamber wall conditions will be important for delivering consistent results from plasma enhanced atomic layer deposition

Simulation of spatially dependent excitation rates and power deposition in RF discharges for plasma processing

International Nuclear Information System (INIS)

Kushner, M.J.; Anderson, H.M.; Hargis, P.J.

1985-01-01

In low pressure, radio frequency (RF) discharges of the type used in plasma processing of semiconductor materials, the rate of electron impact excitation and energy transfer processes depends upon both the phase of the RF excitation and position in the discharge. Electron impact collisions create radicals that diffuse or drift to the surfaces of interest where they are adsorbed or otherwise react. To the extent that these radicals have a finite lifetime, their transport time from point of creation to surface of interest is an important parameter. The spatial dependence of the rate of the initial electron impact collisions is therefore also an important parameter. The power that sustains the discharge is coupled into the system by two mechanisms: a high energy e-beam component of the electron distribution resulting from electrons falling through or being accelerated by the sheaths, and by joule heating in the body of the plasma. In this paper, the authors discuss the spatial dependence of excitation rates and the method of power deposition iin RF discharges of the type used for plasma processing

Influence of plasma density on the chemical composition and structural properties of pulsed laser deposited TiAlN thin films

Energy Technology Data Exchange (ETDEWEB)

Quiñones-Galván, J. G.; Camps, Enrique [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, México D.F. C.P. 11801 (Mexico); Muhl, S. [Instituto de Investigaciones en Materiales, UNAM, México D.F. C.P. 04510 (Mexico); Flores, M. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, Apdo. Postal 307, C.P. 45101 Zapopan, Jalisco (Mexico); Campos-González, E. [Departamento de Física, CINVESTAV-IPN, Apdo. Postal 14-740, México D.F. 07360 (Mexico)

2014-05-15

Incorporation of substitutional Al into the TiN lattice of the ternary alloy TiAlN results in a material with improved properties compared to TiN. In this work, TiAlN thin films were grown by the simultaneous ablation of Ti and Al targets in a nitrogen containing reactive atmosphere. The deposit was formed on silicon substrates at low deposition temperature (200 °C). The dependence of the Al content of the films was studied as a function of the ion density of the plasma produced by the laser ablation of the Al target. The plasma parameters were measured by means of a planar Langmuir probe and optical emission spectroscopy. The chemical composition of the films was measured by energy dispersive X-ray spectroscopy. The results showed a strong dependence of the amount of aluminum incorporated in the films with the plasma density. The structural characterization of the deposits was carried out by Raman spectroscopy, X-ray diffraction, and transmission electron microscopy, where the substitutional incorporation of the Al into the TiN was demonstrated.

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber.

Science.gov (United States)

Dechana, A; Thamboon, P; Boonyawan, D

2014-10-01

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films-analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques-will be discussed.

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

Energy Technology Data Exchange (ETDEWEB)

Dechana, A. [Program of Physics and General Science, Faculty of Science and Technology, Songkhla Rajabhat University, Songkhla 90000 (Thailand); Thamboon, P. [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Boonyawan, D., E-mail: dheerawan.b@cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

2014-10-15

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al{sub 2}O{sub 3} layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al{sub 2}O{sub 3} films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

Science.gov (United States)

Dechana, A.; Thamboon, P.; Boonyawan, D.

2014-10-01

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

International Nuclear Information System (INIS)

Dechana, A.; Thamboon, P.; Boonyawan, D.

2014-01-01

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al 2 O 3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al 2 O 3 films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed

Effect of plasma energy on enhancing biocompatibility and hemocompatibility of diamond-like carbon film with various titanium concentrations

International Nuclear Information System (INIS)

Cheng, H.-C.; Chiou, S.-Y.; Liu, C.-M.; Lin, M.-H.; Chen, C.-C.; Ou, K.-L.

2009-01-01

This investigation develops and explores a new method for depositing a DLC film containing titanium. A bioactive DLC film with titanium dopant (Ti-DLC) was formed by co-sputtering. To determine the properties of DLC films with and without Ti, the specimens were evaluated by material analyses and cell culture. The multilayered nanocrystal TiC was embedded in the amorphous DLC matrix. Microtwins were present between TiC and Ti-DLC. They relaxed residual stress and improved the adhesion of Ti-DLC to the TiC film. The Ti-DLC film proliferates more effectively than Ti or DLC, revealing that the biocompatibility of Ti-DLC clearly exceeds that of DLC, Ti and TiC films. The Ti-DLC film proliferates more effectively than Ti, TiC or DLC film, revealing that the biocompatibility of Ti-DLC clearly exceeds that of DLC and Ti film. In addition, the higher deposited plasma energies were, more densification the films were. It is believed that high plasma energy enhanced the film densification, and then improves surface contact area of adsorbing proteins. It is believed that enhancing cell attachment and subsequently inducing cell proliferation and cell differentiation is related with plasma energy during deposition of Ti-DLC films.

Films deposited from reactive sputtering of aluminum acetylacetonate under low energy ion bombardment

Energy Technology Data Exchange (ETDEWEB)

Battaglin, Felipe Augusto Darriba; Prado, Eduardo Silva; Cruz, Nilson Cristino da; Rangel, Elidiane Cipriano, E-mail: elidiane@sorocaba.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Sorocaba, SP (Brazil). Lab. de Plasmas Tecnologicos; Caseli, Luciano [Universidade Federal de Sao Paulo (UNIFESP), Diadema, SP (Brazil). Instituto de Ciencias Ambientais, Quimicas e Farmaceuticas; Silva, Tiago Fiorini da; Tabacniks, Manfredo Harri [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica

2017-07-15

Films were deposited from aluminum acetylacetonate (Al(acac)3 ) using a methodology involving reactive sputtering and low energy ion bombardment. The plasma was generated by the application of radiofrequency power to the powder containing electrode and simultaneously, negative pulses were supplied to the electrode where the substrates were attached. It was investigated the effect of the duty cycle of the pulses (Δ) on the properties of the coatings. Association of ion bombardment to the deposition process increased film thickness, structure reticulation and organic content. Ions from the deposition environment were implanted at the film-air interface or underneath it. Morphology and topography were altered depending on Δ. Considering the enhancement of Δ, it affected the flux of ions reaching the depositing interface and then the deposition rate, H content, crosslinking degree and surface microstructure. Alumina groups were detected in the infrared spectra, whereas the precipitation of amorphous alumina was confirmed by X-ray diffraction. (author)

Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

Energy Technology Data Exchange (ETDEWEB)

Jun, Byung Hyuk; Kim, Chan Joong

2006-05-15

Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

Science.gov (United States)

Alcinkaya, Burak; Sel, Kivanc

2018-01-01

The properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.

Deposition of porous cathodes using plasma spray technique for reduced-temperature SOFCs

Energy Technology Data Exchange (ETDEWEB)

Jankovic, J.; Hui, S.; Roller, J.; Kesler, O.; Xie, Y.; Maric, R.; Ghosh, D. [National Research Council of Canada, Vancouver, BC (Canada). Inst. for Fuel Cell Innovation

2005-07-01

Current techniques for Solid Oxide Fuel Cell (SOFC) materials deposition are often expensive and time-consuming. Plasma-spraying techniques provide higher deposition rates, short processing times and control over porosity and composition during deposition. Optimum plasma spraying for lanthanum based cathode materials were discussed. Plasma-spraying was used to deposit cathode materials onto ceramic and stainless steel substrates to obtain highly porous structures. Lanthanum cathode materials with composition of La{sub 0.6}Sr{sub 0.4}C{sub 0.2}Fe{sub 0.8}O{sub 3} were employed in the powder form. The powder was prepared from powder precursors with different power formers and binder levels, or from produced single-phase lanthanum powders. The (La{sub 0.8}Sr{sub 0.2}){sub 0.98}MnO{sub 3} cathode material was also processed for comparison purposes. The deposition process was developed to obtain coatings with good bond strength, porosity, film thickness and residual stresses. The phase and microstructure of deposited materials were characterized using X-Ray Diffraction and Scanning Electron Microscopy (SEM). It was concluded that good flow of the powder precursors is achieved by spraying 50-100 um particle size powders and using vibrating feeders. Further processing of the spraying powders was recommended. It was noted that oxide precursors showed greater reactivity among the precursors. The best precursor reactivity and coating morphology was obtained using 40 volume per cent of graphite pore former, incorporated into the precursor mixture during wet ball milling. It was concluded that higher power levels and larger distances between the plasma gun and the substrate result in coatings with the highest porosities and best phase compositions. 5 refs., 1 tab., 6 figs.

Modification of optical and electrical properties of chemical bath deposited CdS using plasma treatments

International Nuclear Information System (INIS)

Gonzalez, G.; Krishnan, B.; Avellaneda, D.; Castillo, G. Alan; Das Roy, T.K.; Shaji, S.

2011-01-01

Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar cells. Here we report preparation and characterization of chemical bath deposited CdS thin films and modification of their optical and electrical properties using plasma treatments. CdS thin films were prepared from a chemical bath containing Cadmium chloride, Triethanolamine and Thiourea under various deposition conditions. Good quality thin films were obtained during deposition times of 5, 10 and 15 min. CdS thin films prepared for 10 min. were treated using a glow discharge plasma having nitrogen and argon carrier gases. The changes in morphology, optical and electrical properties of these plasma treated CdS thin films were analyzed in detail. The results obtained show that plasma treatment is an effective technique in modification of the optical and electrical properties of chemical bath deposited CdS thin films.

Modification of optical and electrical properties of chemical bath deposited CdS using plasma treatments

Energy Technology Data Exchange (ETDEWEB)

Gonzalez, G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G. Alan; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon, C.P 66450 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

2011-08-31

Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar cells. Here we report preparation and characterization of chemical bath deposited CdS thin films and modification of their optical and electrical properties using plasma treatments. CdS thin films were prepared from a chemical bath containing Cadmium chloride, Triethanolamine and Thiourea under various deposition conditions. Good quality thin films were obtained during deposition times of 5, 10 and 15 min. CdS thin films prepared for 10 min. were treated using a glow discharge plasma having nitrogen and argon carrier gases. The changes in morphology, optical and electrical properties of these plasma treated CdS thin films were analyzed in detail. The results obtained show that plasma treatment is an effective technique in modification of the optical and electrical properties of chemical bath deposited CdS thin films.

One-step microwave plasma enhanced chemical vapor deposition (MW-PECVD) for transparent superhydrophobic surface

Science.gov (United States)

Thongrom, Sukrit; Tirawanichakul, Yutthana; Munsit, Nantakan; Deangngam, Chalongrat

2018-02-01

We demonstrate a rapid and environmental friendly fabrication technique to produce optically clear superhydrophobic surfaces using poly (dimethylsiloxane) (PDMS) as a sole coating material. The inert PDMS chain is transformed into a 3-D irregular solid network through microwave plasma enhanced chemical vapor deposition (MW-PECVD) process. Thanks to high electron density in the microwave-activated plasma, coating can be done in just a single step with rapid deposition rate, typically much shorter than 10 s. Deposited layers show excellent superhydrophobic properties with water contact angles of ∼170° and roll-off angles as small as ∼3°. The plasma-deposited films can be ultrathin with thicknesses under 400 nm, greatly diminishing the optical loss. Moreover, with appropriate coating conditions, the coating layer can even enhance the transmission over the entire visible spectrum due to a partial anti-reflection effect.

Plasma device

International Nuclear Information System (INIS)

Thode, L.E.

1981-01-01

A method is described for electron beam heating of a high-density plasma to drive a fast liner. An annular or solid relativistic electron beam is used to heat a plasma to kilovolt temperatures through streaming instabilities in the plasma. Energy deposited in the plasma then converges on a fast liner to explosively or ablatively drive the liner to implosion. (U.K.)

Formation of microchannels from low-temperature plasma-deposited silicon oxynitride

Science.gov (United States)

Matzke, Carolyn M.; Ashby, Carol I. H.; Bridges, Monica M.; Manginell, Ronald P.

2000-01-01

A process for forming one or more fluid microchannels on a substrate is disclosed that is compatible with the formation of integrated circuitry on the substrate. The microchannels can be formed below an upper surface of the substrate, above the upper surface, or both. The microchannels are formed by depositing a covering layer of silicon oxynitride over a mold formed of a sacrificial material such as photoresist which can later be removed. The silicon oxynitride is deposited at a low temperature (.ltoreq.100.degree. C.) and preferably near room temperature using a high-density plasma (e.g. an electron-cyclotron resonance plasma or an inductively-coupled plasma). In some embodiments of the present invention, the microchannels can be completely lined with silicon oxynitride to present a uniform material composition to a fluid therein. The present invention has applications for forming microchannels for use in chromatography and electrophoresis. Additionally, the microchannels can be used for electrokinetic pumping, or for localized or global substrate cooling.

Energy deposition in NSRR test fuels

International Nuclear Information System (INIS)

Ohnishi, Nobuaki; Tanzawa, Sadamitsu; Tanzawa, Tomio; Kitano, Teruaki; Okazaki, Shuji

1978-02-01

Interpretation of fuel performance data collected during inpile testing in the NSRR requires a knowledge of the energy deposition or enthalpy increase in each sample tested. The report describes the results of absolute measurement of fission products and contents of uranium in irradiated test fuels which were performed to determine the energy deposition. (auth.)

Sputter deposition of tantalum-nitride films on copper using an rf-plasma

International Nuclear Information System (INIS)

Walter, K.C.; Fetherston, R.P.; Sridharan, K.; Chen, A.; Shamim, M.M.; Conrad, J.R.

1994-01-01

A tantalum-nitride film was successfully deposited at ambient temperature on copper with a modified ion-assisted-deposition (IAD) technique. The process uses an argon and nitrogen plasma to sputter deposit from a tantalum rf-cathode and ion implant the deposited film simultaneously. Both argon and nitrogen ions are used for sputtering and ion implantation. Auger spectroscopy and x-ray diffraction were used to characterize the resulting film

The Electrical Properties of Plasma-Deposited Thin Films Derived from Pelargonium graveolens

Directory of Open Access Journals (Sweden)

Ahmed Al-Jumaili

2017-10-01

Full Text Available Inherently volatile at atmospheric pressure and room temperature, plant-derived precursors present an interesting human-health-friendly precursor for the chemical vapour deposition of thin films. The electrical properties of films derived from Pelargonium graveolens (geranium were investigated in metal–insulator–metal (MIM structures. Thin polymer-like films were deposited using plasma-enhanced synthesis under various plasma input power. The J–V characteristics of thus-fabricated MIM were then studied in order to determine the direct current (DC conduction mechanism of the plasma polymer layers. It was found that the capacitance of the plasma-deposited films decreases at low frequencies (C ≈ 10−11 and remains at a relatively constant value (C ≈ 10−10 at high frequencies. These films also have a low dielectric constant across a wide range of frequencies that decreases as the input RF power increases. The conductivity was determined to be around 10−16–10−17 Ω−1 m−1, which is typical for insulating materials. The Richardson–Schottky mechanism might dominate charge transport in the higher field region for geranium thin films.

Hidden parameters in the plasma deposition of microcrystalline silicon solar cells

NARCIS (Netherlands)

van den Donker, M.N.; Rech, B.; Schmitz, R.; Klomfass, J.; Dingemans, G.; Finger, F.; Houben, L.; Kessels, W.M.M.; Sanden, van de M.C.M.

2007-01-01

The effect of process parameters on the plasma deposition of µc-Si:H solar cells is reviewed in this article. Several in situ diagnostics are presented, which can be used to study the process stability as an additional parameter in the deposition process. The diagnostics were used to investigate the

Deposition of mullite and mullite-like coatings on silicon carbide by dual-source metal plasma immersion. Topical report, October 1995--September 1996

Energy Technology Data Exchange (ETDEWEB)

Brown, I.G.; Monteiro, O.R. [Lawrence Berkeley National Lab., CA (United States)

1997-04-01

Mullite and mullite-like coatings on silicon carbide have been produced by a Metal Plasma Immersion Ion Implantation and Deposition (Mepiiid) technique based on two cathodic vacuum arc sources and concurrent pulse biasing of the substrate in an oxygen atmosphere. The deposition was carried out at oxygen partial pressures of between 0.66 and 3.33 Pa. The Al:Si ratio in the films varied from 1:1 to 8:1 and was controlled by varying the pulse duration of the separate plasma guns. High bias voltage was used early in the deposition process in order to produce atomic mixing at the film-substrate interface, while lower bias voltage was used later in the deposition; low ion energy allows control of the physical properties of the film as well as faster deposition rates. The as-deposited films were amorphous, and crystalline mullite was formed by subsequent annealing at 1,100 C for 2 hours in air. Strong adhesion between the mullite and the SiC was achieved, in some cases exceeding the 70 MPa instrumental limit of the pull-tester.

Supersonic Plasma Spray Deposition of CoNiCrAlY Coatings on Ti-6Al-4V Alloy

Science.gov (United States)

Caliari, F. R.; Miranda, F. S.; Reis, D. A. P.; Essiptchouk, A. M.; Filho, G. P.

2017-06-01

Plasma spray is a versatile technology used for production of environmental and thermal barrier coatings, mainly in the aerospace, gas turbine, and automotive industries, with potential application in the renewable energy industry. New plasma spray technologies have been developed recently to produce high-quality coatings as an alternative to the costly low-pressure plasma-spray process. In this work, we studied the properties of as-sprayed CoNiCrAlY coatings deposited on Ti-6Al-4V substrate with smooth surface ( R a = 0.8 μm) by means of a plasma torch operating in supersonic regime at atmospheric pressure. The CoNiCrAlY coatings were evaluated in terms of their surface roughness, microstructure, instrumented indentation, and phase content. Static and dynamic depositions were investigated to examine their effect on coating characteristics. Results show that the substrate surface velocity has a major influence on the coating properties. The sprayed CoNiCrAlY coatings exhibit low roughness ( R a of 5.7 μm), low porosity (0.8%), excellent mechanical properties ( H it = 6.1 GPa, E it = 155 GPa), and elevated interface toughness (2.4 MPa m1/2).

Influence of damping on proton energy loss in plasmas of all degeneracies

International Nuclear Information System (INIS)

Barriga-Carrasco, Manuel D.

2007-01-01

The purpose of the present paper is to describe the effects of electron-electron collisions on the stopping power of plasmas of any degeneracy. Plasma targets are considered fully ionized so electronic stopping is only due to the free electrons. We focus our analysis on plasmas which electronic density is around solid values n e ≅10 23 cm -3 and which temperature is around T≅10 eV; these plasmas are in the limit of weakly coupled plasmas. This type of plasma has not been studied extensively though it is very important for inertial confinement fusion. The electronic stopping is obtained from an exact quantum mechanical evaluation, which takes into account the degeneracy of the target plasma, and later it is compared with common classical and degenerate approximations. Differences are around 30% in some cases which can produce bigger mistakes in further energy deposition and projectile range studies. Then we consider electron-electron collisions in the exact quantum mechanical electronic stopping calculation. Now the maximum stopping occurs at velocities smaller than for the calculations without considering collisions for all kinds of plasmas analyzed. The energy loss enhances for velocities smaller than the velocity at maximum while decreases for higher velocities. Latter effects are magnified with increasing collision frequency. Differences with the same results for the case of not taking into account collisions are around 20% in the analyzed cases

SiOx Ink-Repellent Layer Deposited by Radio Frequency (RF) Plasmas in Continuous Wave and Pulse Mode

International Nuclear Information System (INIS)

Chen Qiang; Fu Yabo; Pang Hua; Zhang Yuefei; Zhang Guangqiu

2007-01-01

Low surface energy layers, proposed application for non-water printing in computer to plate (CTP) technology, are deposited in both continuous wave and pulse radio frequency (13.56 MHz) plasma with hexamethyldisiloxane (HMDSO) as precursor. It is found that the plasma mode dominates the polymer growth rate and the surface composition. Derived from the spectra of X-ray photoelectron spectroscopy (XPS) and combined with printable test it is concluded that concentration of Si in coatings plays an important role for the ink printability and the ink does not adhere on the surface with high silicon concentration

Reduced chemical warfare agent sorption in polyurethane-painted surfaces via plasma-enhanced chemical vapor deposition of perfluoroalkanes.

Science.gov (United States)

Gordon, Wesley O; Peterson, Gregory W; Durke, Erin M

2015-04-01

Perfluoralkalation via plasma chemical vapor deposition has been used to improve hydrophobicity of surfaces. We have investigated this technique to improve the resistance of commercial polyurethane coatings to chemicals, such as chemical warfare agents. The reported results indicate the surface treatment minimizes the spread of agent droplets and the sorption of agent into the coating. The improvement in resistance is likely due to reduction of the coating's surface free energy via fluorine incorporation, but may also have contributing effects from surface morphology changes. The data indicates that plasma-based surface modifications may have utility in improving chemical resistance of commercial coatings.

Atomic layer deposition of ruthenium on plasma-treated vertically aligned carbon nanotubes for high-performance ultracapacitors.

Science.gov (United States)

Kim, Jun Woo; Kim, Byungwoo; Park, Suk Won; Kim, Woong; Shim, Joon Hyung

2014-10-31

It is challenging to realize a conformal metal coating by atomic layer deposition (ALD) because of the high surface energy of metals. In this study, ALD of ruthenium (Ru) on vertically aligned carbon nanotubes (CNTs) was carried out. To activate the surface of CNTs that lack surface functional groups essential for ALD, oxygen plasma was applied ex situ before ALD. X-ray photoelectron spectroscopy and Raman spectroscopy confirmed surface activation of CNTs by the plasma pretreatment. Transmission electron microscopy analysis with energy-dispersive x-ray spectroscopy composition mapping showed that ALD Ru grew conformally along CNTs walls. ALD Ru/CNTs were electrochemically oxidized to ruthenium oxide (RuOx) that can be a potentially useful candidate for use in the electrodes of ultracapacitors. Electrode performance of RuOx/CNTs was evaluated using cyclic voltammetry and galvanostatic charge-discharge measurements.

On the excess energy of nonequilibrium plasma

International Nuclear Information System (INIS)

Timofeev, A. V.

2012-01-01

The energy that can be released in plasma due to the onset of instability (the excess plasma energy) is estimated. Three potentially unstable plasma states are considered, namely, plasma with an anisotropic Maxwellian velocity distribution of plasma particles, plasma with a two-beam velocity distribution, and an inhomogeneous plasma in a magnetic field with a local Maxwellian velocity distribution. The excess energy can serve as a measure of the degree to which plasma is nonequilibrium. In particular, this quantity can be used to compare plasmas in different nonequilibrium states.

A possible method of carbon deposit mapping on plasma facing components using infrared thermography

International Nuclear Information System (INIS)

Mitteau, R.; Spruytte, J.; Vallet, S.; Travere, J.M.; Guilhem, D.; Brosset, C.

2007-01-01

The material eroded from the surface of plasma facing components is redeposited partly close to high heat flux areas. At these locations, the deposit is heated by the plasma and the deposition pattern evolves depending on the operation parameters. The mapping of the deposit is still a matter of intense scientific activity, especially during the course of experimental campaigns. A method based on the comparison of surface temperature maps, obtained in situ by infrared cameras and by theoretical modelling is proposed. The difference between the two is attributed to the thermal resistance added by deposited material, and expressed as a deposit thickness. The method benefits of elaborated imaging techniques such as possibility theory and fuzzy logics. The results are consistent with deposit maps obtained by visual inspection during shutdowns

Cobalt oxide-based catalysts deposited by cold plasma for proton exchange membrane fuel cells

Energy Technology Data Exchange (ETDEWEB)

Kazimierski, P.; Jozwiak, L.; Sielski, J.; Tyczkowski, J., E-mail: jacek.tyczkowski@p.lodz.pl

2015-11-02

In proton exchange membrane fuel cells (PEMFC), both the anodic hydrogen oxidation reaction and the cathodic oxygen reduction reaction (ORR) require appropriate catalysts. So far, platinum-based catalysts are still the best option for this purpose. However, because these catalysts are too expensive for making commercially viable fuel cells, extensive research over the past decade has focused on developing noble metal-free alternative catalysts. In this paper, an approach based on cobalt oxide films fabricated by plasma-enhanced metal-organic chemical vapor deposition is presented. Such a material can be used to prepare catalysts for ORR in PEMFC. The films containing CoO{sub X} were deposited on a carbon paper thereby forming the electrode. Morphology and atomic composition of the films were investigated by scanning electron microscopy and energy-dispersive X-ray spectroscopy, respectively. The possibility of their application as the electro-catalyst for ORR in PEMFC was investigated and the electro-catalytic activities were evaluated by the electrochemical measurements and single cell tests. It was found that the fuel cell with Pt as the anode catalyst and CoO{sub X} deposit as the cathode catalyst was characterized by the open circuit voltage of 635 mV, Tafel slope of approx. 130 mV/dec and the maximum power density of 5.3 W/m{sup 2}. - Highlights: • Cobalt oxide catalyst for proton exchange membrane fuel cells was plasma deposited. • The catalyst exhibits activity for the oxygen reduction reaction. • Morphology and atomic composition of the catalyst were determined.

Scaling experiments on plasma opening switches for inductive energy storage applications

International Nuclear Information System (INIS)

Boller, J.R.; Commisso, R.J.; Cooperstein, G.

1983-01-01

A new type of fast opening switch for use with pulsed power accelerators is examined. This Plasma Opening Switch (POS) utilizes an injected carbon plasma to conduct large currents (circa 1 MA) for up to 100 ns while a vacuum inductor (circa 100 nH) is charged. The switch is then capable of opening on a short (circa 10 ns) timescale and depositing the stored energy into a load impedance. Output pulse widths and power levels are determined by the storage inductance and the load impedance. The switch operation is studied in detail both analytically and experimentally. Experiments are performed at the 5 kJ stored energy level on the Gamble I generator and at the 50 kJ level on the Gamble II generator. Results of both experiments are reported and the scaling of switch operation is discussed

Plasma deposition of silver nanoparticles on ultrafiltration membranes: antibacterial and anti-biofouling properties.

Science.gov (United States)

Cruz, Mercedes Cecilia; Ruano, Gustavo; Wolf, Marcus; Hecker, Dominic; Vidaurre, Elza Castro; Schmittgens, Ralph; Rajal, Verónica Beatriz

2015-02-01

A novel and versatile plasma reactor was used to modify Polyethersulphone commercial membranes. The equipment was applied to: i) functionalize the membranes with low-temperature plasmas, ii) deposit a film of poly(methyl methacrylate) (PMMA) by Plasma Enhanced Chemical Vapor Deposition (PECVD) and, iii) deposit silver nanoparticles (SNP) by Gas Flow Sputtering. Each modification process was performed in the same reactor consecutively, without exposure of the membranes to atmospheric air. Scanning electron microscopy and transmission electron microscopy were used to characterize the particles and modified membranes. SNP are evenly distributed on the membrane surface. Particle fixation and transport inside membranes were assessed before- and after-washing assays by X-ray photoelectron spectroscopy depth profiling analysis. PMMA addition improved SNP fixation. Plasma-treated membranes showed higher hydrophilicity. Anti-biofouling activity was successfully achieved against Gram-positive ( Enterococcus faecalis ) and -negative ( Salmonella Typhimurium) bacteria. Therefore, disinfection by ultrafiltration showed substantial resistance to biofouling. The post-synthesis functionalization process developed provides a more efficient fabrication route for anti-biofouling and anti-bacterial membranes used in the water treatment field. To the best of our knowledge, this is the first report of a gas phase condensation process combined with a PECVD procedure in order to deposit SNP on commercial membranes to inhibit biofouling formation.

CMAS Interactions with Advanced Environmental Barrier Coatings Deposited via Plasma Spray- Physical Vapor Deposition

Science.gov (United States)

Harder, B. J.; Wiesner, V. L.; Zhu, D.; Johnson, N. S.

2017-01-01

Materials for advanced turbine engines are expected to have temperature capabilities in the range of 1370-1500C. At these temperatures the ingestion of sand and dust particulate can result in the formation of corrosive glass deposits referred to as CMAS. The presence of this glass can both thermomechanically and thermochemically significantly degrade protective coatings on metallic and ceramic components. Plasma Spray- Physical Vapor Deposition (PS-PVD) was used to deposit advanced environmental barrier coating (EBC) systems for investigation on their interaction with CMAS compositions. Coatings were exposed to CMAS and furnace tested in air from 1 to 50 hours at temperatures ranging from 1200-1500C. Coating composition and crystal structure were tracked with X-ray diffraction and microstructure with electron microscopy.

Effects of target electron collisions on energy loss straggling in plasmas of all degeneracies

Energy Technology Data Exchange (ETDEWEB)

Barriga Carrasco, Manuel D. [E.T.S.I. Industriales, Universisdad de Castilla La Mancha, Ciudad Real E13071 (Spain)]. E-mail: ManuelD.Barriga@uclm.es

2007-07-01

The purpose of the present paper is to describe the effects of target electron collisions on the energy loss straggling in plasmas of any degeneracy. We focus our analysis on targets that are in the limit of weakly coupled electron gases, where the random phase approximation can be applied. This type of plasmas targets has not been studied extensively, though they are very important for inertial confinement fusion. The energy loss straggling is obtained from an exact quantum mechanical evaluation, which takes into account the degeneracy of the target plasma, and later it is compared with common classical and degenerate approximations. Also we consider electron collisions in the exact quantum mechanical straggling calculation. Now the maximum straggling occurs at velocities smaller than for the calculations without considering collisions for all kinds of plasmas analyzed. The straggling remains equal or enhances for velocities less than or equal to the velocity at maximum while is slightly decreases for higher velocities. Differences are significant in all cases, that can let large errors creep on in further energy deposition and projectile range studies.

Effects of target electron collisions on energy loss straggling in plasmas of all degeneracies

International Nuclear Information System (INIS)

Barriga Carrasco, Manuel D.

2007-01-01

The purpose of the present paper is to describe the effects of target electron collisions on the energy loss straggling in plasmas of any degeneracy. We focus our analysis on targets that are in the limit of weakly coupled electron gases, where the random phase approximation can be applied. This type of plasmas targets has not been studied extensively, though they are very important for inertial confinement fusion. The energy loss straggling is obtained from an exact quantum mechanical evaluation, which takes into account the degeneracy of the target plasma, and later it is compared with common classical and degenerate approximations. Also we consider electron collisions in the exact quantum mechanical straggling calculation. Now the maximum straggling occurs at velocities smaller than for the calculations without considering collisions for all kinds of plasmas analyzed. The straggling remains equal or enhances for velocities less than or equal to the velocity at maximum while is slightly decreases for higher velocities. Differences are significant in all cases, that can let large errors creep on in further energy deposition and projectile range studies

Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure

Czech Academy of Sciences Publication Activity Database

Schäfer, J.; Fricke, K.; Mika, Filip; Pokorná, Zuzana; Zajíčková, L.; Foest, R.

2017-01-01

Roč. 630, MAY 30 (2017), s. 71-78 ISSN 0040-6090 R&D Projects: GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : plasma jet * liquid assisted plasma enhanced chemical * vapour deposition * silicon oxide Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering OBOR OECD: Coating and films Impact factor: 1.879, year: 2016

Ellipsometric study of nanostructured carbon films deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Bereznai, M.; Budai, J.; Hanyecz, I.; Kopniczky, J.; Veres, M.; Koos, M.; Toth, Z.

2011-01-01

When depositing carbon films by plasma processes the resulting structure and bonding nature strongly depends on the plasma energy and background gas pressure. To produce different energy plasma, glassy carbon targets were ablated by laser pulses of different excimer lasers: KrF (248 nm) and ArF (193 nm). To modify plume characteristics argon atmosphere was applied. The laser plume was directed onto Si substrates, where the films were grown. To evaluate ellipsometric measurements first a combination of the Tauc-Lorentz oscillator and the Sellmeier formula (TL/S) was applied. Effective Medium Approximation models were also used to investigate film properties. Applying argon pressures above 10 Pa the deposits became nanostructured as indicated by high resolution scanning electron microscopy. Above ∼ 100 and ∼ 20 Pa films could not be deposited by KrF and ArF laser, respectively. Our ellipsometric investigations showed, that with increasing pressure the maximal refractive index of both series decreased, while the optical band gap starts with a decrease, but shows a non monotonous course. Correlation between the size of the nanostructures, bonding structure, which was followed by Raman spectroscopy and optical properties were also investigated.

Transport and deposition of injected hydrocarbons in plasma generator PSI-2

International Nuclear Information System (INIS)

Bohmeyer, W.; Naujoks, D.; Markin, A.; Arkhipov, I.; Koch, B.; Schroeder, D.; Fussmann, G.

2005-01-01

The transport and deposition of hydrocarbons were studied in the stationary plasma of plasma generator PSI-2. CH 4 or C 2 H 4 were injected into the plasma at different positions in the target chamber. After an interaction between the plasma and the hydrocarbons, different species are produced, some of them having high sticking probabilities and forming a:CH films on a temperature controlled collector. The film growth is studied in situ for different plasma parameters. The 3D Monte Carlo code ERO including three different sets of atomic data is used to describe the formation of hydrocarbon films

Monte Carlo charged-particle tracking and energy deposition on a Lagrangian mesh.

Science.gov (United States)

Yuan, J; Moses, G A; McKenty, P W

2005-10-01

A Monte Carlo algorithm for alpha particle tracking and energy deposition on a cylindrical computational mesh in a Lagrangian hydrodynamics code used for inertial confinement fusion (ICF) simulations is presented. The straight line approximation is used to follow propagation of "Monte Carlo particles" which represent collections of alpha particles generated from thermonuclear deuterium-tritium (DT) reactions. Energy deposition in the plasma is modeled by the continuous slowing down approximation. The scheme addresses various aspects arising in the coupling of Monte Carlo tracking with Lagrangian hydrodynamics; such as non-orthogonal severely distorted mesh cells, particle relocation on the moving mesh and particle relocation after rezoning. A comparison with the flux-limited multi-group diffusion transport method is presented for a polar direct drive target design for the National Ignition Facility. Simulations show the Monte Carlo transport method predicts about earlier ignition than predicted by the diffusion method, and generates higher hot spot temperature. Nearly linear speed-up is achieved for multi-processor parallel simulations.

Deposition of waste kaolin in aluminum alloy by electrolytic plasma technique

International Nuclear Information System (INIS)

Palinkas, Fabiola Bergamasco da Silva Marcondes; Antunes, Maria Lucia Pereira; Cruz, Nilson Cristino; Rangel, Elidiane Cipriano; Souza, Jose Antonio da Silva

2016-01-01

Full text: Kaolin is a widely explored mineral for various industrial purposes and its processing generates up to 90% of waste, corresponding to 500 thousand tons annually. The Deposition of Kaolin residue on aluminum alloys by electrolytic plasma has objective of a valorization of the residue. It was evaluated the mineralogical composition by X-ray diffraction (XRD), using PANalytical diffractometer X'Pert Pro. The scanning electron microscopy (SEM) and the spectrometry of dispersive of energy (EDS) evaluated the morphology and elementary chemical composition by microscope scanning electron JEOL JSM-6010LA. The Infrared Spectroscopy (FTIR) has used a Spectrometer the Perkin-Elmer 1760X FT-IR with spectral range 4000-400 cm -1 . XRD results indicate peaks of kaolinite as the main constituent. The morphology of the particles correspond to pseudo-hexagonal lamellar crystals characteristic of kaolinite, analysis by EDS allows to identify the composition of the particles as Al and Si. The samples were deposited at concentrations of 5, 10 and 15 mg of the residue and each concentration were considered deposition times of 5, 10 and 15 minutes. Tests evaluate the films as the wettability, chemical composition, morphology, mechanical strength and corrosion resistance. Results indicate the presence of kaolinite, alumina and mullite in the obtained coatings. (author)

Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition

International Nuclear Information System (INIS)

Kakiuchi, H.; Nakahama, Y.; Ohmi, H.; Yasutake, K.; Yoshii, K.; Mori, Y.

2005-01-01

Silicon nitride (SiN x ) films have been prepared at extremely high deposition rates by the atmospheric pressure plasma chemical vapor deposition (AP-PCVD) technique on Si(001) wafers from gas mixtures containing He, H 2 , SiH 4 and N 2 or NH 3 . A 150 MHz very high frequency (VHF) power supply was used to generate high-density radicals in the atmospheric pressure plasma. Deposition rate, composition and morphology of the SiN x films prepared with various deposition parameters were studied by scanning electron microscopy and Auger electron spectroscopy. Fourier transformation infrared (FTIR) absorption spectroscopy was also used to characterize the structure and the chemical bonding configurations of the films. Furthermore, etching rate with buffered hydrofluoric acid (BHF) solution, refractive index and capacitance-voltage (C-V) characteristics were measured to evaluate the dielectric properties of the films. It was found that effective passivation of dangling bonds and elimination of excessive hydrogen atoms at the film-growing surface seemed to be the most important factor to form SiN x film with a dense Si-N network. The C-V curve of the optimized film showed good interface properties, although further improvement was necessary for use in the industrial metal-insulator-semiconductor (MIS) applications

Improvement of the characteristics of chemical bath deposition-cadmium sulfide films deposited on an O{sub 2} plasma-treated polyethylene terephthalate substrate

Energy Technology Data Exchange (ETDEWEB)

Lim, Donggun [Department of Electronic Engineering, Korea National University of Transportation, Chungju-si, Chungcheongbuk-do 380-702 (Korea, Republic of); Lee, Jaehyeong [School of Electronic and Electrical Engineering, Sungkyunkwan University 300, Cheoncheon-dong, Jangan-gu, Sunwon, Kyeonggi-do, 440-746 (Korea, Republic of); Song, Woochang, E-mail: wcsong@kangwon.ac.kr [Department of Electrical Engineering, Kangwon National University, Samcheok-si, Gangwon-do 245-711 (Korea, Republic of)

2013-11-01

We prepared cadmium sulfide (CdS) films on a polyethylene terephthalate (PET) substrate by a chemical bath deposition (CBD) technique. To improve the adhesion between the CdS film and the PET substrate, the substrate was pre-treated with an O{sub 2} plasma by an inductively coupled plasma. The surface characterizations of the pre-treated PET substrate were analyzed by a contact angle measurement and atomic force microscopy. The results showed that that O{sub 2} plasma-treated PET films had more hydrophilic surface. The hydrophilic property of the substrate is one of the important factors when a film is prepared by CBD. The structural and the optical properties of the CdS films, deposited on PET substrates, were analyzed by using a scanning electron microscope, X-ray diffraction and a UV–visible spectrophotometer. The CdS films were formed on a compact and granular structure. The optical transmittance was also improved. Therefore, the O{sub 2} plasma treatment of a PET surface is an effective method of preparing CdS films deposited on substrates by CBD. - Highlights: • Chemical bath deposition of CdS film for flexible solar cells • O{sub 2} plasma treatment improved adhesion between the CdS and polymer substrate • Identification of best fabrication condition of CdS window layers for flexible solar cells.

Plasma deposition of microcrystalline silicon solar cells. Looking beyond the glass

Energy Technology Data Exchange (ETDEWEB)

Donker, M.N. van den

2006-07-01

Microcrystalline silicon emerged in the past decade as highly interesting material for application in efficient and stable thin film silicon solar cells. It consists of nanometer-sized crystallites embedded in a micrometer-sized columnar structure, which gradually evolves during the SiH{sub 4} based deposition process starting from an amorphous incubation layer. Understanding of and control over this transient and multi-scale growth process is essential in the route towards low-cost microcrystalline silicon solar cells. This thesis presents an experimental study on the technologically relevant high rate (5-10 Aa s{sup -1}) parallel plate plasma deposition process of state-of-the-art microcrystalline silicon solar cells. The objective of the work was to explore and understand the physical limits of the plasma deposition process as well as to develop diagnostics suitable for process control in eventual solar cell production. Among the developed non-invasive process diagnostics were a pyrometer, an optical spectrometer, a mass spectrometer and a voltage probe. Complete thin film silicon solar cells and modules were deposited and characterized. (orig.)

A solid-state nuclear magnetic resonance study of post-plasma reactions in organosilicone microwave plasma-enhanced chemical vapor deposition (PECVD) coatings.

Science.gov (United States)

Hall, Colin J; Ponnusamy, Thirunavukkarasu; Murphy, Peter J; Lindberg, Mats; Antzutkin, Oleg N; Griesser, Hans J

2014-06-11

Plasma-polymerized organosilicone coatings can be used to impart abrasion resistance and barrier properties to plastic substrates such as polycarbonate. Coating rates suitable for industrial-scale deposition, up to 100 nm/s, can be achieved through the use of microwave plasma-enhanced chemical vapor deposition (PECVD), with optimal process vapors such as tetramethyldisiloxane (TMDSO) and oxygen. However, it has been found that under certain deposition conditions, such coatings are subject to post-plasma changes; crazing or cracking can occur anytime from days to months after deposition. To understand the cause of the crazing and its dependence on processing plasma parameters, the effects of post-plasma reactions on the chemical bonding structure of coatings deposited with varying TMDSO-to-O2 ratios was studied with (29)Si and (13)C solid-state magic angle spinning nuclear magnetic resonance (MAS NMR) using both single-pulse and cross-polarization techniques. The coatings showed complex chemical compositions significantly altered from the parent monomer. (29)Si MAS NMR spectra revealed four main groups of resonance lines, which correspond to four siloxane moieties (i.e., mono (M), di (D), tri (T), and quaternary (Q)) and how they are bound to oxygen. Quantitative measurements showed that the ratio of TMDSO to oxygen could shift the chemical structure of the coating from 39% to 55% in Q-type bonds and from 28% to 16% for D-type bonds. Post-plasma reactions were found to produce changes in relative intensities of (29)Si resonance lines. The NMR data were complemented by Fourier transform infrared (FTIR) spectroscopy. Together, these techniques have shown that the bonding environment of Si is drastically altered by varying the TMDSO-to-O2 ratio during PECVD, and that post-plasma reactions increase the cross-link density of the silicon-oxygen network. It appears that Si-H and Si-OH chemical groups are the most susceptible to post-plasma reactions. Coatings produced at a

A novel method of calculating the energy deposition curve of nanosecond pulsed surface dielectric barrier discharge

International Nuclear Information System (INIS)

He, Kun; Wang, Xinying; Lu, Jiayu; Cui, Quansheng; Pang, Lei; Di, Dongxu; Zhang, Qiaogen

2015-01-01

To obtain the energy deposition curve is very important in the fields to which nanosecond pulse dielectric barrier discharges (NPDBDs) are applied. It helps the understanding of the discharge physics and fast gas heating. In this paper, an equivalent circuit model, composed of three capacitances, is introduced and a method of calculating the energy deposition curve is proposed for a nanosecond pulse surface dielectric barrier discharge (NPSDBD) plasma actuator. The capacitance C d and the energy deposition curve E R are determined by mathematically proving that the mapping from C d to E R is bijective and numerically searching one C d that satisfies the requirement for E R to be a monotonically non-decreasing function. It is found that the value of capacitance C d varies with the amplitude of applied pulse voltage due to the change of discharge area and is dependent on the polarity of applied voltage. The bijectiveness of the mapping from C d to E R in nanosecond pulse volumetric dielectric barrier discharge (NPVDBD) is demonstrated and the feasibility of the application of the new method to NPVDBD is validated. This preliminarily shows a high possibility of developing a unified approach to calculate the energy deposition curve in NPDBD. (paper)

Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

Energy Technology Data Exchange (ETDEWEB)

Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho; Cha, Suk Won, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Iui-dong, Yeongtong-gu, Suwon 443-270 (Korea, Republic of); Hong, Soon Wook; Koo, Bongjun; Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); An, Jihwan [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

2016-01-15

Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.

Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

International Nuclear Information System (INIS)

Sulyaeva, Veronica S.; Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A.; Kesler, Valerii G.; Kirienko, Viktor V.

2014-01-01

Thin BC x N y films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC x N y films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC x N y layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC x N y films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC x N y films were found to be high optical transparent layers (93%). • BC x N y layers are dielectrics with dielectric constant k = 2.2–8.9

Reduced energy conservation law for magnetized plasma

International Nuclear Information System (INIS)

Sosenko, P.P.; Decyk, V.K.

1994-01-01

A global energy conservation law for a magnetized plasma is studied within the context of a quasiparticle description. A reduced energy conservation law is derived for low-frequency, as compared to the gyromagnetic frequency, plasma motions with regard to both non-uniform mean flows and fluctuations in the plasma. The mean value of plasma energy is calculated and sufficient stability conditions for non-equilibrium plasmas are derived. (orig.)

Study of oxygen diluted silane plasmas applied for the deposition of silicium oxyde; Etudes des plasmas organoscilicies dilues en oxygene utilises pour la deposition d'oxyde de silicium

Energy Technology Data Exchange (ETDEWEB)

Magni, D. [Ecole Polytechnique Federale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland)

2001-09-01

Plasma enhanced chemical vapour deposition of thin films such as silicon dioxide is used in many applications such as the insulator production in semiconductor technology or anticorrosion coating in packaging industry as a substitute for aluminium which is less ecological. Oxygen diluted silane plasmas are often utilized to produce SiO{sub 2} film, but the tendency is to work with organosilicon precursors such as HMDSO (hexamethyldisiloxane ) described as non-toxic and requiring less stringent safety and costly installation. In this study, the species in gaseous phase and the powder produced in oxygen-diluted HMDSO plasmas were experimentally characterized in a radiofrequency (RF) capacitively-coupled reactor at 13.56 MHz. Some aspects of plasma enhanced deposition of SiO{sub 2} were studied in a RF magnetron reactor . The gaseous phase of the oxygen-diluted plasmas were studied by infrared absorption spectroscopy and mass spectrometry .The complementarity of these diagnostics allowed to show that the dominant species in gaseous phase come from the homogeneous reaction between oxygen and the radical CH{sub x} (with x 1,2 and 3), abundantly produced in the plasma. Two principal pathways were shown to occur. A first way leads to hydrocarbon formation such as methane (CH{sub 4}) and acetylene (C{sub 2}H{sub 2}), whose partial pressures are close to 2 %. A second way leads to the formation of molecules from the combustion of CH{sub x}, such as formaldehyde (CH{sub 2}O), formic acid (CH{sub 2}O{sub 2}), carbon monoxide (CO), carbon dioxide (CO{sub 2}) and water. Moreover it is shown that the CO{sub 2} results from a heterogeneous reaction between the carbon on the surfaces and the oxygen coming from the plasma. At low dilution conditions, the partial pressures of CO and CO{sub 2} were estimated at 25 and 10 % of the total pressure respectively. In argon or helium diluted HMDSO plasmas, methane, acetylene and hydrogen are the main stable molecules produced in the gaseous

Low temperature (< 100 °C) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

International Nuclear Information System (INIS)

Li, Flora M.; Waddingham, Rob; Milne, William I.; Flewitt, Andrew J.; Speakman, Stuart; Dutson, James; Wakeham, Steve; Thwaites, Mike

2011-01-01

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p–n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu 2 O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu 2 O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu 2 O films are reported. It is known from previously published work that the formation of pure Cu 2 O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu 2 O thin films (as opposed to CuO or mixed phase CuO/Cu 2 O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu 2 O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a

Hydrogen gas driven permeation through tungsten deposition layer formed by hydrogen plasma sputtering

International Nuclear Information System (INIS)

Uehara, Keiichiro; Katayama, Kazunari; Date, Hiroyuki; Fukada, Satoshi

2015-01-01

Highlights: • H permeation tests for W layer formed by H plasma sputtering are performed. • H permeation flux through W layer is larger than that through W bulk. • H diffusivity in W layer is smaller than that in W bulk. • The equilibrium H concentration in W layer is larger than that in W bulk. - Abstract: It is important to evaluate the influence of deposition layers formed on plasma facing wall on tritium permeation and tritium retention in the vessel of a fusion reactor from a viewpoint of safety. In this work, tungsten deposition layers having different thickness and porosity were formed on circular nickel plates by hydrogen RF plasma sputtering. Hydrogen permeation experiment was carried out at the temperature range from 250 °C to 500 °C and at hydrogen pressure range from 1013 Pa to 101,300 Pa. The hydrogen permeation flux through the nickel plate with tungsten deposition layer was significantly smaller than that through a bare nickel plate. This indicates that a rate-controlling step in hydrogen permeation was not permeation through the nickel plate but permeation though the deposition layer. The pressure dependence on the permeation flux differed by temperature. Hydrogen permeation flux through tungsten deposition layer is larger than that through tungsten bulk. From analysis of the permeation curves, it was indicated that hydrogen diffusivity in tungsten deposition layer is smaller than that in tungsten bulk and the equilibrium hydrogen concentration in tungsten deposition layer is enormously larger than that in tungsten bulk at same hydrogen pressure.

Increase in the energy absorption of pulsed plasma by the formation of tungsten nanostructure

Science.gov (United States)

Sato, D.; Ohno, N.; Domon, F.; Kajita, S.; Kikuchi, Y.; Sakuma, I.

2017-06-01

The synergistic effects of steady-state and pulsed plasma irradiation to material have been investigated in the device NAGDIS-PG (NAGoya DIvertor Simulator with Plasma Gun). The duration of the pulsed plasma was ~0.25 ms. To investigate the pulsed plasma heat load on the materials, we developed a temperature measurement system using radiation from the sample in a high time resolution. The heat deposited in response to the transient plasma on a tungsten surface was revealed by using this system. When the nanostructures were formed by helium plasma irradiation, the temperature increase on the bulk sample was enhanced. The result suggested that the amount of absorbed energy on the surface was increased by the formation of nanostructures. The possible mechanisms causing the phenomena are discussed with the calculation of a sample temperature in response to the transient heat load.

Dynamic behavior of plasma-facing materials during plasma instabilities in tokamak reactors

International Nuclear Information System (INIS)

Hassanein, A.; Konkashbaev, I.

1997-01-01

Damage to plasma-facing and nearby components due to plasma instabilities remains a major obstacle to a successful tokamak concept. The high energy deposited on facing materials during plasma instabilities can cause severe erosion, plasma contamination, and structural failure of these components. Erosion damage can take various forms such as surface vaporization, spallation, and liquid ejection of metallic materials. Comprehensive thermodynamic and radiation hydrodynamic codes have been developed, integrated, and used to evaluate the extent of various damage to plasma-facing and nearby components. The eroded and splashed materials will be transported and then redeposited elsewhere on other plasma-facing components. Detailed physics of plasma/solid-liquid/vapor interaction in a strong magnetic field have been developed, optimized, and implemented in a self-consistent model. The plasma energy deposited in the evolving divertor debris is quickly and intensely reradiated, which may cause severe erosion and melting of other nearby components. Factors that influence and reduce vapor-shielding efficiency such as vapor diffusion and turbulence are also discussed and evaluated

Plasma polymerization at different positions in an asymmetric ethylene discharge

International Nuclear Information System (INIS)

Trieschmann, Jan; Hegemann, Dirk

2011-01-01

The characteristics of plasma polymerization are investigated in an asymmetric, capacitively coupled plasma discharge. Here, the deposition in different plasma zones, i.e. on the driven electrode, within the plasma bulk and the plasma sheath as well as approximately at the plasma-sheath edge, is investigated. Principal expectations are perfectly met, though new interesting dependences of the obtained a-C : H coatings with respect to film properties and deposition rates are also found. That is, the deposition rates as measured on thin, small glass slides placed directly on the electrode are considerably higher than everywhere else in the plasma, yet only single-sided. In contrast, the deposition rates on the samples within the plasma are lowered depending on the exact placement, while a double-sided coating is obtained. Furthermore, film properties, such as the film density, are highly dependent on the sample placement in the plasma, which can even be higher under floating conditions. With simple physical arguments we are able to show the relations between the deposition rate and the energy input into the plasma as well as between the energy density during film growth and the film density itself.

Surface and corrosion characteristics of carbon plasma implanted and deposited nickel-titanium alloy

International Nuclear Information System (INIS)

Poon, R.W.Y.; Liu, X.Y.; Chung, C.Y.; Chu, P.K.; Yeung, K.W.K.; Lu, W.W.; Cheung, K.M.C.

2005-01-01

Nickel-titanium shape memory alloys (NiTi) are potentially useful in orthopedic implants on account of their super-elastic and shape memory properties. However, the materials are prone to surface corrosion and the most common problem is out-diffusion of harmful Ni ions from the substrate into body tissues and fluids. In order to improve the corrosion resistance and related surface properties, we used the technique of plasma immersion ion implantation and deposition to deposit an amorphous hydrogenated carbon coating onto NiTi and implant carbon into NiTi. Both the deposited amorphous carbon film and carbon plasma implanted samples exhibit much improved corrosion resistances and surface mechanical properties and possible mechanisms are suggested

Study on re-sputtering during CN{sub x} film deposition through spectroscopic diagnostics of plasma

Energy Technology Data Exchange (ETDEWEB)

Liang, Peipei; Yang, Xu; Li, Hui; Cai, Hua [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Sun, Jian; Xu, Ning [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Fudan University, Shanghai 200433 (China); Wu, Jiada, E-mail: jdwu@fudan.edu.cn [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Fudan University, Shanghai 200433 (China)

2015-10-15

A nitrogen-carbon plasma was generated during the deposition of carbon nitride (CN{sub x}) thin films by pulsed laser ablation of a graphite target in a discharge nitrogen plasma, and the optical emission of the generated nitrogen-carbon plasma was measured for the diagnostics of the plasma and the characterization of the process of CN{sub x} film deposition. The nitrogen-carbon plasma was recognized to contain various species including nitrogen molecules and molecular ions excited in the ambient N{sub 2} gas, carbon atoms and atomic ions ablated from the graphite target and CN radicals. The temporal evolution and spatial distribution of the CN emission and their dependence on the substrate bias voltage show two groups of CN radicals flying in opposite directions. One represents the CN radicals formed as the products of the reactions occurring in the nitrogen-carbon plasma, revealing the reactive deposition of CN{sub x} film due to the reactive expansion of the ablation carbon plasma in the discharge nitrogen plasma and the effective formation of gaseous CN radicals as precursors for CN{sub x} film growth. The other one represents the CN radicals re-sputtered from the growing CN{sub x} film by energetic plasma species, evidencing the re-sputtering of the growing film accompanying film growth. And, the re-sputtering presents ion-induced sputtering features.

High Temperature Multilayer Environmental Barrier Coatings Deposited Via Plasma Spray-Physical Vapor Deposition

Science.gov (United States)

Harder, Bryan James; Zhu, Dongming; Schmitt, Michael P.; Wolfe, Douglas E.

2014-01-01

Si-based ceramic matrix composites (CMCs) require environmental barrier coatings (EBCs) in combustion environments to avoid rapid material loss. Candidate EBC materials have use temperatures only marginally above current technology, but the addition of a columnar oxide topcoat can substantially increase the durability. Plasma Spray-Physical Vapor Deposition (PS-PVD) allows application of these multilayer EBCs in a single process. The PS-PVD technique is a unique method that combines conventional thermal spray and vapor phase methods, allowing for tailoring of thin, dense layers or columnar microstructures by varying deposition conditions. Multilayer coatings were deposited on CMC specimens and assessed for durability under high heat flux and load. Coated samples with surface temperatures ranging from 2400-2700F and 10 ksi loads using the high heat flux laser rigs at NASA Glenn. Coating morphology was characterized in the as-sprayed condition and after thermomechanical loading using electron microscopy and the phase structure was tracked using X-ray diffraction.

Scaling of energy deposition in fast ignition targets

International Nuclear Information System (INIS)

Welch, Dale R.; Slutz, Stephen A.; Mehlhorn, Thomas Alan; Campbell, Robert B.

2005-01-01

We examine the scaling to ignition of the energy deposition of laser generated electrons in compressed fast ignition cores. Relevant cores have densities of several hundred g/cm 3 , with a few keV initial temperature. As the laser intensities increase approaching ignition systems, on the order of a few 10 21 W/cm 2 , the hot electron energies expected to approach 100MeV. Most certainly anomalous processes must play a role in the energy transfer, but the exact nature of these processes, as well as a practical way to model them, remain open issues. Traditional PIC explicit methods are limited to low densities on current and anticipated computing platforms, so the study of relevant parameter ranges has received so far little attention. We use LSP to examine a relativistic electron beam (presumed generated from a laser plasma interaction) of legislated energy and angular distribution is injected into a 3D block of compressed DT. Collective effects will determine the stopping, most likely driven by magnetic field filamentation. The scaling of the stopping as a function of block density and temperature, as well as hot electron current and laser intensity is presented. Sub-grid models may be profitably used and degenerate effects included in the solution of this problem.

Floating harmonic probe measurements in the low-temperature plasma jet deposition system

Czech Academy of Sciences Publication Activity Database

Zanáška, M.; Hubička, Zdeněk; Čada, Martin; Kudrna, Pavel; Tichý, M.

2018-01-01

Roč. 51, č. 2 (2018), s. 1-8, č. článku 025205. ISSN 0022-3727 R&D Projects: GA ČR(CZ) GA15-00863S Institutional support: RVO:68378271 Keywords : plasma diagnostic * floating harmonic probe * Langmuir probe * hollow cathode * non-conducting film deposition Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics ) Impact factor: 2.588, year: 2016

Effect of additional sample bias in Meshed Plasma Immersion Ion Deposition (MPIID) on microstructural, surface and mechanical properties of Si-DLC films

Energy Technology Data Exchange (ETDEWEB)

Wu, Mingzhong [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Tian, Xiubo, E-mail: xiubotian@163.com [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Li, Muqin [School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Gong, Chunzhi [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Wei, Ronghua [Southwest Research Institute, San Antonio, TX 78238 (United States)

2016-07-15

Highlights: • A novel Meshed Plasma Immersion Ion Deposition is proposed. • The deposited Si-DLC films possess denser structures and high deposition rate. • It is attributed to ion bombardment of the deposited films. • The ion energy can be independently controlled by an additional bias (novel set up). - Abstract: Meshed Plasma Immersion Ion Deposition (MPIID) using cage-like hollow cathode discharge is a modified process of conventional PIID, but it allows the deposition of thick diamond-like carbon (DLC) films (up to 50 μm) at a high deposition rate (up to 6.5 μm/h). To further improve the DLC film properties, a new approach to the MPIID process is proposed, in which the energy of ions incident to the sample surface can be independently controlled by an additional voltage applied between the samples and the metal meshed cage. In this study, the meshed cage was biased with a pulsed DC power supply at −1350 V peak voltage for the plasma generation, while the samples inside the cage were biased with a DC voltage from 0 V to −500 V with respect to the cage to study its effect. Si-DLC films were synthesized with a mixture of Ar, C{sub 2}H{sub 2} and tetramethylsilane (TMS). After the depositions, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectrons spectroscopy (XPS), Raman spectroscopy and nanoindentation were used to study the morphology, surface roughness, chemical bonding and structure, and the surface hardness as well as the modulus of elasticity of the Si-DLC films. It was observed that the intense ion bombardment significantly densified the films, reduced the surface roughness, reduced the H and Si contents, and increased the nanohardness (H) and modulus of elasticity (E), whereas the deposition rate decreased slightly. Using the H and E data, high values of H{sup 3}/E{sup 2} and H/E were obtained on the biased films, indicating the potential excellent mechanical and tribological properties of the films. In this

Microwave plasma-enhanced chemical vapour deposition growth of carbon nanostructures

Directory of Open Access Journals (Sweden)

Shivan R. Singh

2010-05-01

Full Text Available The effect of various input parameters on the production of carbon nanostructures using a simple microwave plasma-enhanced chemical vapour deposition technique has been investigated. The technique utilises a conventional microwave oven as the microwave energy source. The developed apparatus is inexpensive and easy to install and is suitable for use as a carbon nanostructure source for potential laboratory-based research of the bulk properties of carbon nanostructures. A result of this investigation is the reproducibility of specific nanostructures with the variation of input parameters, such as carbon-containing precursor and support gas flow rate. It was shown that the yield and quality of the carbon products is directly controlled by input parameters. Transmission electron microscopy and scanning electron microscopy were used to analyse the carbon products; these were found to be amorphous, nanotubes and onion-like nanostructures.

Plasma device

International Nuclear Information System (INIS)

Thode, L.E.

1981-01-01

A method is described of providing electron beam heating of a high-density plasma to drive a fast liner to implode a structured microsphere. An annular relativistic electron beam is used to heat an annular plasma to kilovolt temperatures through streaming instabilities in the plasma. Energy deposited in the annular plasma then converges on a fast liner to explosively or ablatively drive the liner to convergence to implode the structured microsphere. (U.K.)

Method for depositing high-quality microcrystalline semiconductor materials

Science.gov (United States)

Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

2011-03-08

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Hydrogen retention properties of co-deposition under high-density plasmas in TRIAM-1M

International Nuclear Information System (INIS)

Tokitani, M.; Miyamoto, M.; Tokunaga, K.; Fujiwara, T.; Yoshida, N.; Sakamoto, M.; Zushi, H.; Hanada, K.; TRIAM Group,; Nagata, S.; Tsuchiya, B.

2007-01-01

Retention of hydrogen in co-deposits formed under high-density plasma discharge in TRIAM-1M was studied. In order to quantify the retained hydrogen, material probe experiments were performed under the high-density (n at e ∼10 19 m -3 ) discharges. After the exposure to the plasma, the quantitative analysis of deposition, hydrogen retention, and microscopic modification of specimens were performed by means of ion beam analysis and transmission electron microscopy. The co-deposits mainly consisted of Mo. The deposition rate of Mo was about ten times higher than that of the low-density discharge case. The hydrogen concentrations (H/Mo) retained in the co-deposits were 0.06-0.17, which was much higher than that in bulk-Mo and almost equal to the low-density case. These results indicate that as long as the co-deposition layers are continuously formed, strong wall pumping in TRIAM-1M is maintained during the discharges

Induction plasma deposition technology for nuclear fuel fabrication

International Nuclear Information System (INIS)

Jung, I. H.; Bae, K. K.; Lee, J. W.; Kim, T. K.; Yang, M. S.

1998-01-01

A study on induction plasma deposition with ceramic materials, yttria-stabilized-zirconia ZrO 2 -Y 2 O 3 (m.p. 2640 degree C), was conducted with a view of developing a new method for nuclear fuel fabrication. Before making dense pellets of more than 96%T.D., the spraying condition was optimized through the process parameters, such as chamber pressure, plasma plate power, powder spraying distance, sheath gas composition, probe position, particle size and powders of different morphology. The results with a 5mm thick deposit on rectangular planar graphite substrates showed a 97.11% theoretical density when the sheath gas flow rate was Ar/H 2 120/20 l/min, probe position 8cm, particle size -75 μm and spraying distance 22cm by AMDRY146 powder. The degree of influence of the main effects on density were powder morphology, particle size, sheath gas composition, plate power and spraying distance, in that order. Among the two parameter interactions, the sheath gas composition and chamber pressure affects density greatly. By using the multi-pellets mold of wheel type, the pellet density did not exceed 94%T.D., owing to the spraying angle

Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

Energy Technology Data Exchange (ETDEWEB)

Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

2015-07-28

Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

Deposition and surface treatment of Ag-embedded indium tin oxide by plasma processing

International Nuclear Information System (INIS)

Kim, Jun Young; Kim, Jae-Kwan; Kim, Ja-Yeon; Kwon, Min-Ki; Yoon, Jae-Sik; Lee, Ji-Myon

2013-01-01

Ag-embedded indium tin oxide (ITO) films were deposited on Corning 1737 glass by radio-frequency magnetron sputtering under an Ar or Ar/O 2 mixed gas ambient with a combination of ITO and Ag targets that were sputtered alternately by switching on and off the shutter of the sputter gun. The effects of a subsequent surface treatment using H 2 and H 2 + O 2 mixed gas plasma were also examined. The specific resistance of the as-deposited Ag-embedded ITO sample was lower than that of normal ITO. The transmittance was quenched when Ag was incorporated in ITO. To enhance the specific resistance of Ag-embedded ITO, a surface treatment was conducted using H 2 or H 2 + O 2 mixed gas plasma. Although all samples showed improved specific resistance after the H 2 plasma treatment, the transmittance was quenched due to the formation of agglomerated metals on the surface. The specific resistance of the film was improved without any deterioration of the transmittance after a H 2 + O 2 mixed gas plasma treatment. - Highlights: • Ag-embedded indium tin oxide was deposited. • The contact resistivity was decreased by H 2 + O 2 plasma treatment. • The process was carried out at room temperature without thermal treatment. • The mechanism of enhancing the contact resistance was clarified

Coaxial carbon plasma gun deposition of amorphous carbon films

Science.gov (United States)

Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

1984-01-01

A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

Coaxial carbon plasma gun deposition of amorphous carbon films

International Nuclear Information System (INIS)

Sater, D.M.; Gulino, D.A.

1984-03-01

A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented

BIRTH: a beam deposition code for non-circular tokamak plasmas

International Nuclear Information System (INIS)

Otsuka, Michio; Nagami, Masayuki; Matsuda, Toshiaki

1982-09-01

A new beam deposition code has been developed which is capable of calculating fast ion deposition profiles including the orbit correction. The code incorporates any injection geometry and a non-circular cross section plasma with a variable elongation and an outward shift of the magnetic flux surface. Typical cpu time on a DEC-10 computer is 10 - 20 seconds and 5 - 10 seconds with and without the orbit correction, respectively. This is shorter by an order of magnitude than that of other codes, e.g., Monte Carlo codes. The power deposition profile calculated by this code is in good agreement with that calculated by a Monte Carlo code. (author)

A study of the performance and properties of diamond like carbon (DLC) coatings deposited by plasma chemical vapor deposition (CVD) for two stroke engine components

Energy Technology Data Exchange (ETDEWEB)

Tither, D. [BEP Grinding Ltd., Manchester (United Kingdom); Ahmed, W.; Sarwar, M.; Penlington, R. [Univ. of Northumbria, Newcastle-upon-Tyne (United Kingdom)

1995-12-31

Chemical vapor deposition (CVD) using microwave and RF plasma is arguably the most successful technique for depositing diamond and diamond like carbon (DLC) films for various engineering applications. However, the difficulties of depositing diamond are nearly as extreme as it`s unique combination of physical, chemical and electrical properties. In this paper, the modified low temperature plasma enhanced CVD system is described. The main focus of this paper will be work related to deposition of DLC on metal matrix composite materials (MMCs) for application in two-stroke engine components and results will be presented from SEM, mechanical testing and composition analysis studies. The authors have demonstrated the feasibility of depositing DLC on MMCs for the first time using a vacuum deposition process.

Characteristics of SiOx-containing hard film prepared by low temperature plasma enhanced chemical vapor deposition using hexamethyldisilazane or vinyltrimethylsilane and post oxygen plasma treatment

Energy Technology Data Exchange (ETDEWEB)

Wei, Yi-Syuan; Liu, Wan-Yu; Wu, Hsin-Ming [Department of Materials Engineering, Tatung University, Taipei, 104, Taiwan (China); Chen, Ko-Shao, E-mail: kschen@ttu.edu.tw [Department of Materials Engineering, Tatung University, Taipei, 104, Taiwan (China); Cech, Vladimir [Institute of Materials Chemistry, Brno University of Technology (Czech Republic)

2017-03-01

This study, monomers of hexamethyldisilazane (HMDSZ) and vinyltrimethylsilane (VTMS) were respectively used to deposit on the surface of polyethylene terephthalate (PET) substrate by plasma enhanced chemical vapor deposition. Oxygen plasma treatment follows the HMDSZ and VTMS deposition to produce a hydrophilic surface film on the deposited surface. Time for HMDSZ and VTMS plasma deposition was changed to investigate its influences on water contact angle, deposited film thickness, refractive index, and friction coefficient properties. The surface morphologies of the processed samples were observed by scanning electron microscope and their chemical compositions were measured by X-ray photoelectron spectroscopy. At 550 nm wavelength, the optical transmittance of PET after the HMDSZ treatment decreases from 89% to 83%, but increases from 89% to 95% for the VTMS treatment. With increase in HMDSZ and VTMS deposition times, the film thickness increases and the refractive index decreases. Result revealed by XPS, SiO{sub 2} film is formed on the sample surface after the O{sub 2} plasma treatment. The film adhesion capability by the HMDSZ+O{sub 2} and VTMS+O{sub 2} treatment was stronger than that by the HMDSZ and VTMS treatment only. The SiOx films produced by HMDSZ+O{sub 2} and VTMS+O{sub 2} treatment can increase the film hardness and improve light transmittance. - Highlights: • With increase in HMDSZ and VTMS deposition times, the film thickness increases and the refractive index decreases. • The optical transmittance of PET after the VTMS treatment increases from 89% to 95%. • The SiO{sub 2} films deposited by HMDSZ+O{sub 2} and VTMS+O{sub 2} plasma can increase the film hardness and improve light transmittance. • It is expected that they can be applied to the optical transmittance protective film on plastic substrate in the future.

GORGON - a computer code for the calculation of energy deposition and the slowing down of ions in cold materials and hot dense plasmas

International Nuclear Information System (INIS)

Long, K.A.; Moritz, N.; Tahir, N.A.

1983-11-01

The computer code GORGON, which calculates the energy deposition and slowing down of ions in cold materials and hot plasmas is described, and analyzed in this report. This code is in a state of continuous development but an intermediate stage has been reached where it is considered useful to document the 'state of the art' at the present time. The GORGON code is an improved version of a code developed by Zinamon et al. as part of a more complex program system for studying the hydrodynamic motion of plane metal targets irradiated by intense beams of protons. The improvements made in the code were necessary to improve its usefulness for problems related to the design and burn of heavy ion beam driven inertial confinement fusion targets. (orig./GG) [de

Experimental investigation on the energy deposition and morphology of the electrical explosion of copper wire in vacuum

International Nuclear Information System (INIS)

Shi, Zongqian; Shi, Yuanjie; Wang, Kun; Jia, Shenli

2016-01-01

This paper presents the experimental results of the electrical explosion of copper wires in vacuum using negative nanosecond-pulsed current with magnitude of 1–2 kA. The 20 μm-diameter copper wires with different lengths are exploded with three different current rates. A laser probe is applied to construct the shadowgraphy and interferometry diagnostics to investigate the distribution and morphology of the exploding product. The interference phase shift is reconstructed from the interferogram, by which the atomic density distribution is calculated. Experimental results show that there exist two voltage breakdown modes depending on the amount of the specific energy deposition. For the strong-shunting mode, shunting breakdown occurs, leading to the short-circuit-like current waveform. For the weak-shunting mode with less specific energy deposition, the plasma generated during the voltage breakdown is not enough to form a conductive plasma channel, resulting in overdamped declining current waveform. The influence of the wire length and current rate on the characteristics of the exploding wires is also analyzed.

Experimental investigation on the energy deposition and morphology of the electrical explosion of copper wire in vacuum

Energy Technology Data Exchange (ETDEWEB)

Shi, Zongqian; Shi, Yuanjie; Wang, Kun; Jia, Shenli [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Shanxi 710049 (China)

2016-03-15

This paper presents the experimental results of the electrical explosion of copper wires in vacuum using negative nanosecond-pulsed current with magnitude of 1–2 kA. The 20 μm-diameter copper wires with different lengths are exploded with three different current rates. A laser probe is applied to construct the shadowgraphy and interferometry diagnostics to investigate the distribution and morphology of the exploding product. The interference phase shift is reconstructed from the interferogram, by which the atomic density distribution is calculated. Experimental results show that there exist two voltage breakdown modes depending on the amount of the specific energy deposition. For the strong-shunting mode, shunting breakdown occurs, leading to the short-circuit-like current waveform. For the weak-shunting mode with less specific energy deposition, the plasma generated during the voltage breakdown is not enough to form a conductive plasma channel, resulting in overdamped declining current waveform. The influence of the wire length and current rate on the characteristics of the exploding wires is also analyzed.

Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

International Nuclear Information System (INIS)

Shinoda, Hiroyuki; Mutsukura, Nobuki

2005-01-01

Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

Laser ablation and deposition of wide bandgap semiconductors: plasma and nanostructure of deposits diagnosis

Science.gov (United States)

Sanz, M.; López-Arias, M.; Rebollar, E.; de Nalda, R.; Castillejo, M.

2011-12-01

Nanostructured CdS and ZnS films on Si (100) substrates were obtained by nanosecond pulsed laser deposition at the wavelengths of 266 and 532 nm. The effect of laser irradiation wavelength on the surface structure and crystallinity of deposits was characterized, together with the composition, expansion dynamics and thermodynamic parameters of the ablation plume. Deposits were analyzed by environmental scanning electron microscopy, atomic force microscopy and X-ray diffraction, while in situ monitoring of the plume was carried out with spectral, temporal and spatial resolution by optical emission spectroscopy. The deposits consist of 25-50 nm nanoparticle assembled films but ablation in the visible results in larger aggregates (150 nm) over imposed on the film surface. The aggregate free films grown at 266 nm on heated substrates are thicker than those grown at room temperature and in the former case they reveal a crystalline structure congruent with that of the initial target material. The observed trends are discussed in reference to the light absorption step, the plasma composition and the nucleation processes occurring on the substrate.

Self-enhanced plasma discharge effect in the deposition of diamond-like carbon films on the inner surface of slender tube

Energy Technology Data Exchange (ETDEWEB)

Xu, Yi [Department of 702, Beihang University, Beijing (China); Li, Liuhe, E-mail: liliuhe@buaa.edu.cn [Department of 702, Beihang University, Beijing (China); Luo, Sida [Department of 702, Beihang University, Beijing (China); International Research Institute for Multidisciplinary Science, Beihang University, Beijing (China); Lu, Qiuyuan [Dong Feng Commercial Vehicle Technical Center, Dong Feng Commercial Vehicle Co., LTD, Wuhan (China); Gu, Jiabin; Lei, Ning [Department of 702, Beihang University, Beijing (China); Huo, Chunqin [Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, Shenzhen University, Guangdong (China)

2017-01-30

Highlights: • Effect of inner surface materials of tubes on plasma discharge is examined. • Electron mean free path is used to analyze the films deposition. • Secondary electrons emitted from inner surface of tube enhance plasma discharge. - Abstract: Enhanced glow discharge plasma immersion ion implantation and deposition (EGD-PIII&D) have been proved to be highly effective for depositing diamond-like carbon (DLC) films on the inner surface of the slender quartz tube with a deposition rate of 1.3 μm/min. Such a high-efficiency DLC films deposition was explained previously as the short electrons mean free path to cause large collision frequency between electrons and neutral particles. However, in this paper, we found that the inner surface material of the tube itself play a vital role on the films deposition. To disclose the mechanism of this phenomenon, the effect of different inner surface materials on plasma discharge was experimentally and theoretically investigated. Then a self-enhancing plasma discharge is discovered. It is found that secondary electrons emitted from the inner surface material, whatever it is the tube inner surface or deposited DLC films, can dramatically enhance the plasma discharge to improve the DLC films deposition rate.

Modification of optical and electrical properties of chemical bath deposited SnS using O{sub 2} plasma treatments

Energy Technology Data Exchange (ETDEWEB)

Gómez, A. [Facultad de Ciencias, Universidad Autónoma del Estado de México, Estado de México, México (Mexico); Martínez, H., E-mail: hm@fis.unam.mx [Instituto de Ciencias Fisicas, Universidad Nacional Autónoma de México, Apartado Postal 48-3, 62251, Cuernavaca, Morelos (Mexico); Calixto-Rodríguez, M. [Centro de Investigación en Energía, Universidad Autónoma del Estado de México, Estado de México, México (Mexico); Avellaneda, D. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, México (Mexico); Reyes, P.G. [Facultad de Ciencias, Universidad Autónoma del Estado de México, Estado de México, México (Mexico); Flores, O. [Instituto de Ciencias Fisicas, Universidad Nacional Autónoma de México, Apartado Postal 48-3, 62251, Cuernavaca, Morelos (Mexico)

2013-06-15

In this paper, we report modifications of structural and optical, electrical properties that occur in tin sulphide (SnS) treated in O{sub 2} plasma. The SnS thin films were deposited by chemical bath deposition technique. The samples were treated in an O{sub 2} plasma discharge at 3 Torr of pressure discharge, a discharge voltage of 2.5 kV and 20 mA of discharge current. The prepared and treated thin films were characterized by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The photoconductivity and electrical effects of SnS have been studied. The SnS thin films had an orthorhombic crystalline structure. With the plasma treatment the optical gap and electrical properties of the SnS films changed from 1.61 to 1.84 eV, for 3.9 × 10{sup 5} to 10.42 Ω cm, respectively. These changes can be attributed to an increase in electron density, percolation effects due to porosity, surface degradation/etching that is an increase in surface roughness, where some structural changes related to crystallinity occurs like a high grain size as revealed by SEM images.

Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

International Nuclear Information System (INIS)

Lim, Taekyung; Kim, Dongchool; Ju, Sanghyun

2013-01-01

Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al 2 O 3 ) on a graphene channel through nitrogen plasma treatment. The deposited Al 2 O 3 thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al 2 O 3 as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics

Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

Directory of Open Access Journals (Sweden)

Laura B. Ruppalt

2014-12-01

Full Text Available In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD high-k dielectric stacks with device-quality p-type GaSb(001 epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H2/Ar plasma treatment and subsequently removed to air. High-k HfO2 and Al2O3/HfO2 bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H2-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H2-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

Rapid plasma treatment of polyimide for improved adhesive and durable copper film deposition

International Nuclear Information System (INIS)

Usami, Kenji; Ishijima, Tatsuo; Toyoda, Hirotaka

2012-01-01

To improve adhesion at the interface between Cupper (Cu) and polyimide (PI) layers, a PI film surface was treated with a microwave-excited plasma. The Ar/N 2 plasma treatment improved the Cu adhesion force to 10 N/cm even for PI substrates with absorbed water. A dramatic improvement of the adhesion durability was achieved by depositing a thin carbon film (C) on the PI substrate as an interlayer between PI and Cu using a microwave plasma followed by treatment with the Ar/N 2 plasma prior to the Cu deposition. After a 20-h accelerated aging test, the reduction of the adhesion force for the resulting Cu/C/PI sample was only 10%, whereas that for the Cu/PI sample was 55%. To gain insight into the film properties, the interface between the Cu and PI film was investigated by X-ray photoelectron spectroscopy.

Atmospheric Plasma Deposition of SiO2 Films for Adhesion Promoting Layers on Titanium

Directory of Open Access Journals (Sweden)

Liliana Kotte

2014-12-01

Full Text Available This paper evaluates the deposition of silica layers at atmospheric pressure as a pretreatment for the structural bonding of titanium (Ti6Al4V, Ti15V3Cr3Sn3Al in comparison to an anodizing process (NaTESi process. The SiO2 film was deposited using the LARGE plasma source, a linearly extended DC arc plasma source and applying hexamethyldisiloxane (HMDSO as a precursor. The morphology of the surface was analyzed by means of SEM, while the characterization of the chemical composition of deposited plasma layers was done by XPS and FTIR. The long-term durability of bonded samples was evaluated by means of a wedge test in hot/wet condition. The almost stoichiometric SiO2 film features a good long-term stability and a high bonding strength compared to the films produced with the wet-chemical NaTESi process.

Atmospheric pulsed laser deposition of plasmonic nanoparticle films of silver with flowing gas and flowing atmospheric plasma

Science.gov (United States)

Khan, T. M.; Pokle, A.; Lunney, J. G.

2018-04-01

Two methods of atmospheric pulsed laser deposition of plasmonic nanoparticle films of silver are described. In both methods the ablation plume, produced by a 248 nm, 20 ns excimer laser in gas, is strongly confined near the target and forms a nanoparticle aerosol. For both the flowing gas, and the atmospheric plasma from a dielectric barrier discharge plasma source, the aerosol is entrained in the flow and carried to a substrate for deposition. The nanoparticle films produced by both methods were examined by electron microscopy and optical absorption spectroscopy. With plasma assistance, the deposition rate was significantly enhanced and the film morphology altered. With argon gas, isolated nanoparticles of 20 nm size were obtained, whereas in argon plasma, the nanoparticles are aggregated in clusters of 90 nm size. Helium gas also leads to the deposition of isolated nanoparticles, but with helium plasma, two populations of nanoparticles are observed: one of rounded particles with a mean size of 26 nm and the other of faceted particles with a mean size 165 nm.

Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

Energy Technology Data Exchange (ETDEWEB)

Sulyaeva, Veronica S., E-mail: veronica@niic.nsc.ru [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A. [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, Valerii G. [Laboratory of Physical Principles for Integrated Microelectronics, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Kirienko, Viktor V. [Laboratory of Nonequilibrium Semiconductors Systems, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation)

2014-05-02

Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers (93%). • BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9.

Research on high energy density plasmas and applications

International Nuclear Information System (INIS)

1999-01-01

Recently, technologies on lasers, accelerators, and pulse power machines have been significantly advanced and input power density covers the intensity range from 10 10 W/cm 2 to higher than 10 20 W/cm 2 . As the results, high pressure gas and solid targets can be heated up to very high temperature to create hot dense plasmas which have never appeared on the earth. The high energy density plasmas opened up new research fields such as inertial confinement fusion, high brightness X-ray radiation sources, interiors of galactic nucleus,supernova, stars and planets, ultra high pressure condensed matter physics, plasma particle accelerator, X-ray laser, and so on. Furthermore, since these fields are intimately connected with various industrial sciences and technologies, the high energy density plasma is now studied in industries, government institutions, and so on. This special issue of the Journal of Plasma Physics and Nuclear Fusion Research reviews the high energy density plasma science for the comprehensive understanding of such new fields. In May, 1998, the review committee for investigating the present status and the future prospects of high energy density plasma science was established in the Japan Society of Plasma Science and Nuclear Fusion Research. We held three committee meetings to discuss present status and critical issues of research items related to high energy density plasmas. This special issue summarizes the understandings of the committee. This special issue consists of four chapters: They are Chapter 1: Physics important in the high energy density plasmas, Chapter 2: Technologies related to the plasma generation; drivers such as lasers, pulse power machines, particle beams and fabrication of various targets, Chapter 3: Plasma diagnostics important in high energy density plasma experiments, Chapter 4: A variety of applications of high energy density plasmas; X-ray radiation, particle acceleration, inertial confinement fusion, laboratory astrophysics

Effect of plasma composition on nanocrystalline diamond layers deposited by a microwave linear antenna plasma-enhanced chemical vapour deposition system

Czech Academy of Sciences Publication Activity Database

Taylor, Andrew; Ashcheulov, Petr; Čada, Martin; Fekete, Ladislav; Hubík, Pavel; Klimša, Ladislav; Olejníček, Jiří; Remeš, Zdeněk; Jirka, Ivan; Janíček, P.; Bedel-Pereira, E.; Kopeček, Jaromír; Mistrík, J.; Mortet, Vincent

2015-01-01

Roč. 212, č. 11 (2015), s. 2418-2423 ISSN 1862-6300 R&D Projects: GA ČR GA13-31783S; GA MŠk LO1409 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 ; RVO:61388955 Keywords : diamond * electrical conductivity * nanocrystalline materials * optical emission spectroscopy * plasma enhanced chemical vapour deposition * SiC Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.648, year: 2015

Study of oxygen diluted silane plasmas applied for the deposition of silicium oxyde

International Nuclear Information System (INIS)

Magni, D.

2001-09-01

Plasma enhanced chemical vapour deposition of thin films such as silicon dioxide is used in many applications such as the insulator production in semiconductor technology or anticorrosion coating in packaging industry as a substitute for aluminium which is less ecological. Oxygen diluted silane plasmas are often utilized to produce SiO 2 film, but the tendency is to work with organosilicon precursors such as HMDSO (hexamethyldisiloxane ) described as non-toxic and requiring less stringent safety and costly installation. In this study, the species in gaseous phase and the powder produced in oxygen-diluted HMDSO plasmas were experimentally characterized in a radiofrequency (RF) capacitively-coupled reactor at 13.56 MHz. Some aspects of plasma enhanced deposition of SiO 2 were studied in a RF magnetron reactor . The gaseous phase of the oxygen-diluted plasmas were studied by infrared absorption spectroscopy and mass spectrometry .The complementarity of these diagnostics allowed to show that the dominant species in gaseous phase come from the homogeneous reaction between oxygen and the radical CH x (with x 1,2 and 3), abundantly produced in the plasma. Two principal pathways were shown to occur. A first way leads to hydrocarbon formation such as methane (CH 4 ) and acetylene (C 2 H 2 ), whose partial pressures are close to 2 %. A second way leads to the formation of molecules from the combustion of CH x , such as formaldehyde (CH 2 O), formic acid (CH 2 O 2 ), carbon monoxide (CO), carbon dioxide (CO 2 ) and water. Moreover it is shown that the CO 2 results from a heterogeneous reaction between the carbon on the surfaces and the oxygen coming from the plasma. At low dilution conditions, the partial pressures of CO and CO 2 were estimated at 25 and 10 % of the total pressure respectively. In argon or helium diluted HMDSO plasmas, methane, acetylene and hydrogen are the main stable molecules produced in the gaseous phase. Particle formation in oxygen-diluted HMDSO

Plasma immersion surface modification with metal ion plasma

International Nuclear Information System (INIS)

Brown, I.G.; Yu, K.M.; Godechot, X.

1991-04-01

We describe here a novel technique for surface modification in which metal plasma is employed and by which various blends of plasma deposition and ion implantation can be obtained. The new technique is a variation of the plasma immersion technique described by Conrad and co-workers. When a substrate is immersed in a metal plasma, the plasma that condenses on the substrate remains there as a film, and when the substrate is then implanted, qualitatively different processes can follow, including' conventional' high energy ion implantation, recoil implantation, ion beam mixing, ion beam assisted deposition, and metallic thin film and multilayer fabrication with or without species mixing. Multiple metal plasma guns can be used with different metal ion species, films can be bonded to the substrate through ion beam mixing at the interface, and multilayer structures can be tailored with graded or abrupt interfaces. We have fabricated several different kinds of modified surface layers in this way. 22 refs., 4 figs

Characterisation of silicon carbide films deposited by plasma-enhanced chemical vapour deposition

International Nuclear Information System (INIS)

Iliescu, Ciprian; Chen Bangtao; Wei Jiashen; Pang, A.J.

2008-01-01

The paper presents a characterisation of amorphous silicon carbide films deposited in plasma-enhanced chemical vapour deposition (PECVD) reactors for MEMS applications. The main parameter was optimised in order to achieve a low stress and high deposition rate. We noticed that the high frequency mode (13.56 MHz) gives a low stress value which can be tuned from tensile to compressive by selecting the correct power. The low frequency mode (380 kHz) generates high compressive stress (around 500 MPa) due to ion bombardment and, as a result, densification of the layer achieved. Temperature can decrease the compressive value of the stress (due to annealing effect). A low etching rate of the amorphous silicon carbide layer was noticed for wet etching in KOH 30% at 80 o C (around 13 A/min) while in HF 49% the layer is practically inert. A very slow etching rate of amorphous silicon carbide layer in XeF 2 -7 A/min- was observed. The paper presents an example of this application: PECVD-amorphous silicon carbide cantilevers fabricated using surface micromachining by dry-released technique in XeF 2

Monte Carlo simulation of energy deposition by low-energy electrons in molecular hydrogen

Science.gov (United States)

Heaps, M. G.; Furman, D. R.; Green, A. E. S.

1975-01-01

A set of detailed atomic cross sections has been used to obtain the spatial deposition of energy by 1-20-eV electrons in molecular hydrogen by a Monte Carlo simulation of the actual trajectories. The energy deposition curve (energy per distance traversed) is quite peaked in the forward direction about the entry point for electrons with energies above the threshold of the electronic states, but the peak decreases and broadens noticeably as the electron energy decreases below 10 eV (threshold for the lowest excitable electronic state of H2). The curve also assumes a very symmetrical shape for energies below 10 eV, indicating the increasing importance of elastic collisions in determining the shape of the curve, although not the mode of energy deposition.

Enhanced energy deposition symmetry by hot electron transport

International Nuclear Information System (INIS)

Wilson, D.; Mack, J.; Stover, E.; VanHulsteyn, D.; McCall, G.; Hauer, A.

1981-01-01

High energy electrons produced by resonance absorption carry the CO 2 laser energy absorbed in a laser fusion pellet. The symmetrization that can be achieved by lateral transport of the hot electrons as they deposit their energy is discussed. A K/sub α/ experiment shows a surprising symmetrization of energy deposition achieved by adding a thin layer of plastic to a copper sphere. Efforts to numerically model this effect are described

Corrosion properties of plasma deposited nickel and nickel-based alloys

Czech Academy of Sciences Publication Activity Database

Voleník, Karel; Pražák, M.; Kalabisová, E.; Kreislová, K.; Had, J.; Neufuss, Karel

2003-01-01

Roč. 48, č. 3 (2003), s. 215-226 ISSN 0001-7043 R&D Projects: GA ČR GA106/99/0298 Institutional research plan: CEZ:AV0Z2043910 Keywords : plasma deposits, nickel, nickel-based alloys Subject RIV: JK - Corrosion ; Surface Treatment of Materials

Plasma-enhanced atomic-layer-deposited MoO{sub x} emitters for silicon heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Ziegler, Johannes; Schneider, Thomas; Sprafke, Alexander N. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Mews, Mathias; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institute for Silicon-Photovoltaics, Berlin (Germany); Kaufmann, Kai [Fraunhofer Center for Silicon Photovoltaics CSP, Halle (Germany); University of Applied Sciences, Hochschule Anhalt Koethen, Koethen (Germany); Wehrspohn, Ralf B. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Fraunhofer Institute for Mechanics of Materials IWM Halle, Halle (Germany)

2015-09-15

A method for the deposition of molybdenum oxide (MoO{sub x}) with high growth rates at temperatures below 200 C based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric MoO{sub x} films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed. (orig.)

Study on stability of a-SiCOF films deposited by plasma enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Ding Shijin; Zhang Qingquan; Wang Pengfei; Zhang Wei; Wang Jitao

2001-01-01

Low-dielectric-constant a-SiCOF films have been prepared from TEOS, C 4 F 8 and Ar by using plasma enhanced chemical vapor deposition method. With the aid of X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR), the chemical bonding configuration, thermal stability and resistance to water of the films are explored

Ion-substituted calcium phosphate coatings deposited by plasma-assisted techniques: A review.

Science.gov (United States)

Graziani, Gabriela; Bianchi, Michele; Sassoni, Enrico; Russo, Alessandro; Marcacci, Maurilio

2017-05-01

One of the main critical aspects behind the failure or success of an implant resides in its ability to fast bond with the surrounding bone. To boost osseointegration, the ideal implant material should exhibit composition and structure similar to those of biological apatite. To this aim, the most common approach is to coat the implant surface with a coating of hydroxyapatite (HA), resembling the main component of mineralized tissues. However, bone apatite is a non-stoichiometric, multi-substituted poorly-crystalline apatite, containing significant amounts of foreign ions, with high biological relevance. Ion-substituted HAs can be deposited by so called "wet methods", which are however poorly reproducible and hardly industrially feasible; at the same time bioactive coatings realized by plasma assisted method, interesting for industrial applications, are generally made of stoichiometric (i.e. un-substituted) HA. In this work, the literature concerning plasma-assisted deposition methods used to deposit ion-substituted HA was reviewed and the last advances in this field discussed. The ions taken into exam are those present in mineralized tissues and possibly having biological relevance. Notably, literature about this topic is scarce, especially relating to in vivo animal and clinical trials; further on, available studies evaluate the performance of substituted coatings from different points of view (mechanical properties, bone growth, coating dissolution, etc.) which hinders a proper evaluation of the real efficacy of ion-doped HA in promoting bone regeneration, compared to stoichiometric HA. Moreover, results obtained for plasma sprayed coatings (which is the only method currently employed for deposition at the industrial scale) were collected and compared to those of novel plasma-assisted techniques, that are expected to overcome its limitations. Data so far available on the topic were discussed to highlight advantages, limitations and possible perspectives of these

Deposition of silicon oxynitride at room temperature by Inductively Coupled Plasma-CVD

Energy Technology Data Exchange (ETDEWEB)

Zambom, Luis da Silva [MPCE-Faculdade de Tecnologia de Sao Paulo - CEETEPS, Pca Coronel Fernando Prestes, 30, Sao Paulo - CEP 01124-060 (Brazil)]. E-mail: zambom@lsi.usp.br; Verdonck, Patrick [PSI-LSI-Escola Politecnica da Universidade de Sao Paulo (Brazil)]. E-mail: patrick@lsi.usp.br

2006-10-25

Oxynitride thin films are used in important optical applications and as gate dielectric for MOS devices. Their traditional deposition processes have the drawbacks that high temperatures are needed, high mechanical stresses are induced and the deposition rate is low. Plasma assisted processes may alleviate these problems. In this study, oxynitride films were deposited at room temperature through the chemical reaction of silane, nitrogen and nitrous oxide (N{sub 2}O), in a conventional LPCVD furnace, which was modified into a high density Inductively Coupled Plasma (ICP) reactor. Deposition rates increased with applied coil power and were never lower than 10 nm/min, quite high for room temperature depositions. The films' refractive indexes and FTIR spectra indicate that for processes with low N{sub 2}O gas concentrations, when mixed together with N{sub 2} and SiH{sub 4}, nitrogen was incorporated in the film. This incorporation increased the resistivity, which was up to 70 G{omega} cm, increased the refractive index, from approximately 1.47 to approximately 1.50, and decreased the dielectric constant of these films, which varied in the 4-14 range. These characteristics are adequate for electric applications e.g. for TFT fabrication on glass or polymers which can not stand high temperature steps.

Simulation study of depositing the carbon film on nanoparticles in the magnetized methane plasma

Science.gov (United States)

Mohammadzadeh, Hosein; Pourali, Nima; Ebadi, Zahra

2018-03-01

Plasma coating of nanoparticles in low-temperature magnetized methane plasma is studied by a simulation approach. To this end, by using the global model, the electron temperature and concentration of different species considered in this plasma are determined in the center of a capacitively coupled discharge. Then, the plasma-wall transition region in the presence of an oblique magnetic field is simulated by the multi-component fluid description. Nanoparticles with different radii are injected into the transition region and surface deposition and heating models, as well as dynamics and charging models, are employed to examine the coating process. The results of the simulation show that the non-spherical growth of nanoparticles is affected by the presence of the magnetic field, as with passing time, an oscillating increase is seen in the thickness of the film deposited on nanoparticles. Also, it is shown that the uniformity of the deposited film is dependent on the rotation velocity of nanoparticles. Generally, the obtained results imply that the sphericity of nanoparticles and uniformity of the film coated on them are controllable by the magnitude and orientation of the magnetic field.

Cold plasmas

International Nuclear Information System (INIS)

Franz, G.

1990-01-01

This textbook discusses the following topics: Phenomenological description of a direct current glow discharge; the plasma (temperature distribution and measurement, potential variation, electron energy distribution function, charge neutralization, wall potentials, plasma oscillations); Production of charge carriers (ions, electrons, ionization in the cathode zone, negative glowing zone, Faraday dark space, positive column, anode zone, hollow cathode discharges); RF-discharges (charge carrier production, RF-Shields, scattering mechanisms); Sputtering (ion-surface interaction, kinetics, sputtering yield and energy distribution, systems and conditions, film formation and stresses, contamination, bias techniques, multicomponent film deposition, cohesion, magnetrons, triode systems, plasma enhanced chemical vapor deposition); Dry etching (sputter etching, reactive etching, topography, process control, quantitative investigations); Etching mechanisms (etching of Si and SiO 2 with CF 4 , of III/V-compound-semiconductors, combination of isotrope and anisotrope etching methods, surface cleaning); ion beam systems (applications, etching); Dyclotron-resonance-systems (electron cyclotron resonance systems, whistler-sources and 'resonant inductive plasma etching'); Appendix (electron energy distribution functions, Bohm's transition zone, plasma oscillations, scattering cross sections and mean free path, metastable states, Child-Langmuir-Schottky equation, loss mechanisms, charge carrier distribution in the positive column, breakdown at high frequencies, motion in a magnetic field, skin depth of an electric field for a HF-discharge, whistler waves, dispersion relations for plane wave propagation). (orig.) With 138 figs

Thermal energy storage in granular deposits

Science.gov (United States)

Ratuszny, Paweł

2017-10-01

Energy storage technology is crucial for the development of the use of renewable energy sources. This is a substantial constraint, however it can, to some extent, be solved by storing energy in its various forms: electrical, mechanical, chemical and thermal. This article presents the results of research in thermal properties of granular deposits. Correlation between temperature changes in the stores over a period of time and their physical properties has been studied. The results of the research have practical application in designing thermal stores based on bulk materials and ground deposits. Furthermore, the research results are significant for regeneration of the lower ground sources for heat pumps and provide data for designing ground heat exchangers for ventilation systems.

Metastable phases in yttrium oxide plasma spray deposits and their effect on coating properties

International Nuclear Information System (INIS)

Gourlaouen, V.; Schnedecker, G.; Boncoeur, M.; Lejus, A.M.; Collongues, R.

1993-01-01

Yttrium oxide coatings were obtained by plasma spray. Structural investigations on these deposits show that, due to the drastic conditions of this technique, a minor monoclinic B phase is formed in the neighborhood of the major cubic C form. The authors discuss here the influence of different plasma spray parameters on the amount of the B phase formed. They describe also the main properties of Y 2 O 3 B and C phases in these deposits such as structural characteristics, thermal stability and mechanical behavior

Plasma-assisted ALD for the conformal deposition of SiO2 : process, material and electronic properties

NARCIS (Netherlands)

Dingemans, G.; Helvoirt, van C.A.A.; Pierreux, D.; Keuning, W.; Kessels, W.M.M.

2012-01-01

Plasma-assisted atomic layer deposition (ALD) was used to deposit SiO2 films in the temperature range of Tdep = 50–400°C on Si(100). H2Si[N(C2H5)2]2 and an O2 plasma were used as Si precursor and oxidant, respectively. The ALD growth process and material properties were characterized in detail.

Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Hemawan, Kadek W.; Gou, Huiyang; Hemley, Russell J. [Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Rd., NW, Washington, DC 20015 (United States)

2015-11-02

Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH{sub 4}/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H{sub 2} into the deposition gas chemistry. Electronically excited species of CN, C{sub 2}, Ar, N{sub 2}, CH, H{sub β}, and H{sub α} were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T{sub 2g} phonon at 1333 cm{sup −1} peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

Properties of deposited layer formed by interaction with Be seeded D–He mixture plasma and tungsten

Energy Technology Data Exchange (ETDEWEB)

Tokunaga, K., E-mail: tokunaga@riam.kyushu-u.ac.jp [Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Baldwin, M.J.; Nishijima, D.; Doerner, R.P. [Center for Energy Research, University of California at San Diego, 9500 Gilman Drive, La Jolla, CA 92093-0417 (United States); Nagata, S. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Tsuchiya, B. [Department of General Education, Faculty of Science and Technology, Meiji University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502 (Japan); Kurishita, H. [International Research Center for Nuclear Materials Science, IMR, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Fujiwara, T.; Araki, K.; Miyamoto, Y. [Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Ohno, N. [School of Engineering, Nagoya University, Nagoya 464-8603 (Japan); Ueda, Y. [Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan)

2013-11-15

Be-seeded, high-flux, deuterium/helium mixture plasma exposure experiments on tungsten target materials have been performed to simulate ITER all tungsten divertor erosion/modification and deposition phenomena. The exposure conditions are kept fixed at a typical low-ion-energy of 60 eV and a flux of 3–6 × 10{sup 22}/m{sup 2}/s. Sample temperature is 1123 K and plasma exposure times spanning 1050–10,100 s are explored. The typical ratio of He/D ions is 0.2 and Be content is 0.2%. A He-induced nanostructure layer is formed on the exposure surfaces of tungsten materials and the surface of the nanostructure is covered by a thin layer of Be and O. A fraction of the re-eroded Be from the target is deposited on a glassy carbon plate with line of sight to the tungsten target. Rutherford backscattering spectrometry analyses show that the Be redeposit layer is in the form of laminae. Small amounts of Mo, W and C are also found in the redeposited Be layer. Elastic recoil detection analyses show that D, He and H are also included in the redeposited Be layer.

Synthesis of electro-active manganese oxide thin films by plasma enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Merritt, Anna R. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Rajagopalan, Ramakrishnan [Department of Engineering, The Pennsylvania State University, Dubois, PA 15801 (United States); Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Carter, Joshua D. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States)

2014-04-01

The good stability, cyclability and high specific capacitance of manganese oxide (MnO{sub x}) has recently promoted a growing interest in utilizing MnO{sub x} in asymmetric supercapacitor electrodes. Several literature reports have indicated that thin film geometries of MnO{sub x} provide specific capacitances that are much higher than bulk MnO{sub x} powders. Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique for the production of metal oxide thin films with high purity and controllable thickness. In this work, MnO{sub x} thin films deposited by PECVD from a methylcyclopentadienyl manganese tricarbonyl precursor are presented and the effect of processing conditions on the quality of MnO{sub x} films is described. The film purity and oxidation state of the MnO{sub x} films were studied by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Preliminary electrochemical testing of MnO{sub x} films deposited on carbon fiber electrodes in aqueous electrolytes indicates that the PECVD synthesized films are electrochemically active. - Highlights: • Plasma enhanced chemical vapor deposition of manganese oxide thin films. • Higher plasma power and chamber pressure increase deposition rate. • Manganese oxide thin films are electrochemically active. • Best electrochemical performance observed for pure film with low stress • Lower capacitance observed at higher scan rates despite thin film geometry.

Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

NARCIS (Netherlands)

O'Donoghue, R.; Rechmann, J.; Aghaee, M.; Rogalla, D.; Becker, H.-W.; Creatore, M.; Wieck, A.D.; Devi, A.P.K.

2017-01-01

Herein we describe an efficient low temperature (60–160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga2O3) thin films using hexakis(dimethylamido)digallium [Ga(NMe2)3]2 with oxygen (O2) plasma on Si(100). The use of O2 plasma was found to have a significant

Investigation of plasma potential and pulsed discharge characteristics in enhanced glow discharge plasma immersion ion implantation and deposition

International Nuclear Information System (INIS)

Li Liuhe; Lu Qiuyuan; Fu, Ricky K.Y.; Chu, Paul K.

2009-01-01

Enhanced glow discharge plasma immersion ion implantation and deposition (EGD-PII and D) does not require external plasma sources. In this technique, the plasma is produced by self-glow discharge when a high negative voltage is applied to the sample. The small-area, pointed-shape hollow anode and large area tabular cathode form an electron-focused electric field. Using a special electric field design, the electrons from either the plasma or target (secondary electrons) are focused to a special hollow anode. As a result of the special electron-focusing field, the self-glow discharge process can be enhanced to achieve effective ion implantation into the substrate. In this work, the plasma potential distribution is investigated in details and the possible pulse discharge mechanism is discussed. The unique characteristics of the pulsed plasma and plasma extinction are studied.

RF-plasma vapor deposition of siloxane on paper. Part 1: Physical evolution of paper surface

Science.gov (United States)

Sahin, Halil Turgut

2013-01-01

An alternative, new approach to improve the hydrophobicity and barrier properties of paper was evaluated by radio-frequency (RF) plasma octamethylcyclotetrasiloxane (OMCTSO) vapor treatment. The interaction between OMCTSO and paper, causing the increased hydophobicity, is likely through covalent bonding. The deposited thin silicone-like polymeric layer from OMCTSO plasma treatment possessed desirable hydrophobic properties. The SEM micrographs showed uniformly distributed grainy particles with various shapes on the paper surface. Deposition of the silicone polymer-like layer with the plasma treatment affects the distribution of voids in the network structure and increases the barrier against water intake and air. The water absorptivity was reduced by 44% for the OMCTSO plasma treated sheet. The highest resistance to air flow was an approximately 41% lower air permeability than virgin paper.

Time-resolved measurements of highly-polymerised negative ions in rf silane plasma deposition experiments

International Nuclear Information System (INIS)

Howling, A.A.; Sansonnens, L.; Dorier, J.L.; Hollenstein, C.

1993-07-01

The time-resolved fluxes of negative polysilicon hydride ions from a power-modulated rf silane plasma have been measured by quadrupole mass spectrometry and modeled using a simple polymerisation scheme. Experiments were performed with plasma parameters suitable for high-quality amorphous silicon deposition. Polysilicon hydride anions diffuse from the plasma with low energy (approximately 0.5 eV) during the afterglow after the electron density has decayed and the sheath fields have collapsed. The mass-dependence of the temporal behavior of the anion loss flux demonstrates that the plasma composition is influenced by the modulation frequency. The negative species attain much higher masses than the positive or neutral species, and anions containing as many as sixteen silicon atoms have been observed, corresponding to the 500 amu limit of the mass spectrometer. This suggests that negative ions could be the precursors to particle formation. Ion-molecule and ion-ion reactions are discussed and a simple negative ion polymerisation scheme is proposed which qualitatively reproduces the experimental results. The model shows that the densities of high mass negative ions in the plasma are strongly reduced by modulation frequencies near 1 kHz. Each plasma period is then too short for the polymerisation chain to propagate to high masses before the elementary anions are lost in each subsequent afterglow period. This explains why modulation of the rf power can reduce particle contamination. We conclude that, for the case of silane rf plasmas, the initiation steps which ultimately lead to particle contamination proceed by negative ion polymerisation. (author) 15 figs., 72 refs

Study of hard diamond-like carbon films deposited in an inductively coupled plasma source

International Nuclear Information System (INIS)

Yu Shiji; Ma Tengcai

2003-01-01

Chemical vapor deposition of the hard diamond-like carbon (DLC) films was achieved using an inductively coupled plasma source (ICPS). The microscopy, microhardness, deposition rate and structure characteristic of the DLC films were analyzed. It is shown that the ICPS is suitable for the hard DLC film deposition at relatively low substrate negative bias voltage, and the substrate negative bias voltage greatly affects chemical vapor deposition of the DLC film and its quality

Deposition and surface characterization of nanoparticles of zinc oxide using dense plasma focus device in nitrogen atmosphere

International Nuclear Information System (INIS)

Malhotra, Yashi; Srivastava, M P; Roy, Savita

2010-01-01

Nanoparticles of zinc oxide from zinc oxide pellets in the nitrogen plasma atmosphere are deposited on n and p type silicon substrates using Dense Plasma Focus device. The hot and dense nitrogen plasma formed during the focus phase ionizes the ZnO pellet, which then move upward in a fountain like shape and gets deposited on substrates which are placed above the top of the anode. Structural and surface properties of the deposited ZnO are investigated using X-ray diffraction and Atomic force microscope (AFM). X-ray spectra shows the diffraction plane (002) of ZnO nanoparticles deposited on Si with few shots in nitrogen atmosphere. AFM investigations revealed that there are nanoparticles of size between 15-80 nm on n-Si and p-Si substrates. The deposition on n-type Si is better than the p-type Si can be seen from AFM images, this may be due to different orientation of silicon.

Ionizing Energy Depositions After Fast Neutron Interactions in Silicon

CERN Document Server

Bergmann, Benedikt; Caicedo, Ivan; Kierstead, James; Takai, Helio; Frojdh, Erik

2016-01-01

In this study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast neutron impact. With the Time-of-Flight (ToF) technique, the ionizing energy deposition spectra of recoil silicons and secondary charged particles were assigned to (quasi-)monoenergetic neutron energies in the range from 180 keV to hundreds of MeV. We show and interpret representative measured energy spectra. By separating the ionizing energy losses of the recoil silicon from energy depositions by products of nuclear reactions, the competition of ionizing (IEL) and non-ionizing energy losses (NIEL) of a recoil silicon within the silicon lattice was investigated. The data give supplementary information to the results of a previous measurement and are compared with different theoretical predictions.

Chemistry of plasma-polymerized vinyltriethoxysilane controlled by deposition conditions

Czech Academy of Sciences Publication Activity Database

Čech, V.; Zemek, Josef; Peřina, Vratislav

2008-01-01

Roč. 5, č. 8 (2008), s. 745-752 ISSN 1612-8850 Grant - others:GAČR(CZ) GA104/06/0437 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10480505 Keywords : ESCA/XPS * FTIR * plasma-enhanced chemical vapor deposition (PECVD) * Rutherford back-scattering (RBS) * thin films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.921, year: 2008

Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

NARCIS (Netherlands)

Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

1999-01-01

Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer

Surface characterization of hydrophobic thin films deposited by inductively coupled and pulsed plasmas

International Nuclear Information System (INIS)

Kim, Youngsoo; Lee, Ji-Hye; Kim, Kang-Jin; Lee, Yeonhee

2009-01-01

Different fluorocarbon thin films were deposited on Si substrates using a plasma-polymerization method. Fluorine-containing hydrophobic thin films were obtained by inductively coupled plasma (ICP) and pulsed plasma (PP) with a mixture of fluorocarbon precursors C 2 F 6 , C 3 F 8 , and c-C 4 F 8 and the unsaturated hydrocarbons of C 2 H 2 . The influence on the fluorocarbon surfaces of the process parameters for plasma polymerization, including the gas ratio and the plasma power, were investigated under two plasma-polymerized techniques with different fluorocarbon gas precursors. The hydrophobic properties, surface morphologies, and chemical compositions were elucidated using water contact angle measurements, field emission-scanning electron microscope, x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR), and time-of-flight secondary ion mass spectrometry (TOF-SIMS). In this study, the ICP technique provides coarser grained films and more hydrophobic surfaces as well as a higher deposition rate compared to the PP technique. XPS, FT-IR, and TOF-SIMS analyses indicated that the ICP technique produced more fluorine-related functional groups, including CF 2 and CF 3 , on the surface. From the curve-fitted XPS results, fluorocarbon films grown under ICP technique exhibited less degree of cross-linking and higher CF 2 concentrations than those grown under PP technique.

Patterned growth of carbon nanotubes obtained by high density plasma chemical vapor deposition

Science.gov (United States)

Mousinho, A. P.; Mansano, R. D.

2015-03-01

Patterned growth of carbon nanotubes by chemical vapor deposition represents an assembly approach to place and orient nanotubes at a stage as early as when they are synthesized. In this work, the carbon nanotubes were obtained at room temperature by High Density Plasmas Chemical Vapor Deposition (HDPCVD) system. This CVD system uses a new concept of plasma generation, where a planar coil coupled to an RF system for plasma generation was used with an electrostatic shield for plasma densification. In this mode, high density plasmas are obtained. We also report the patterned growth of carbon nanotubes on full 4-in Si wafers, using pure methane plasmas and iron as precursor material (seed). Photolithography processes were used to pattern the regions on the silicon wafers. The carbon nanotubes were characterized by micro-Raman spectroscopy, the spectra showed very single-walled carbon nanotubes axial vibration modes around 1590 cm-1 and radial breathing modes (RBM) around 120-400 cm-1, confirming that high quality of the carbon nanotubes obtained in this work. The carbon nanotubes were analyzed by atomic force microscopy and scanning electron microscopy too. The results showed that is possible obtain high-aligned carbon nanotubes with patterned growth on a silicon wafer with high reproducibility and control.

Comparison study of biomimetic strontium-doped calcium phosphate coatings by electrochemical deposition and air plasma spray: morphology, composition and bioactive performance.

Science.gov (United States)

Li, Ling; Lu, Xia; Meng, Yizhi; Weyant, Christopher M

2012-10-01

In this study, strontium-doped calcium phosphate coatings were deposited by electrochemical deposition and plasma spray under different process parameters to achieve various coating morphologies. The coating composition was investigated by energy dispersive X-ray spectroscopy and X-ray diffraction. The surface morphologies of the coatings were studied through scanning electron microscopy while the cytocompatibility and bioactivity of the strontium-doped calcium phosphate coatings were evaluated using bone cell culture using MC3T3-E1 osteoblast-like cells. The addition of strontium leads to enhanced proliferation suggesting the possible benefits of strontium incorporation in calcium phosphate coatings. The morphology and composition of deposited coatings showed a strong influence on the growth of cells.

Vacuum arc plasma generation and thin film deposition from a TiB{sub 2} cathode

Energy Technology Data Exchange (ETDEWEB)

Zhirkov, Igor, E-mail: igozh@ifm.liu.se; Petruhins, Andrejs; Naslund, Lars-Ake; Rosen, Johanna [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Kolozsvári, Szilard; Polcik, Peter [PLANSEE Composite Materials GmbH, Siebenbürgerstraße 23, 86983 Lechbruck am See (Germany)

2015-11-02

We have studied the utilization of TiB{sub 2} cathodes for thin film deposition in a DC vacuum arc system. We present a route for attaining a stable, reproducible, and fully ionized plasma flux of Ti and B by removal of the external magnetic field, which leads to dissipation of the vacuum arc discharge and an increased active surface area of the cathode. Applying a magnetic field resulted in instability and cracking, consistent with the previous reports. Plasma analysis shows average energies of 115 and 26 eV, average ion charge states of 2.1 and 1.1 for Ti and B, respectively, and a plasma ion composition of approximately 50% Ti and 50% B. This is consistent with measured resulting film composition from X-ray photoelectron spectroscopy, suggesting a negligible contribution of neutrals and macroparticles to the film growth. Also, despite the observations of macroparticle generation, the film surface is very smooth. These results are of importance for the utilization of cathodic arc as a method for synthesis of metal borides.

Development of high energy pulsed plasma simulator for plasma-lithium trench experiment

Science.gov (United States)

Jung, Soonwook

To simulate detrimental events in a tokamak and provide a test-stand for a liquid lithium infused trench (LiMIT) device, a pulsed plasma source utilizing a theta pinch in conjunction with a coaxial plasma accelerator has been developed. An overall objective of the project is to develop a compact device that can produce 100 MW/m2 to 1 GW/m2 of plasma heat flux (a typical heat flux level in a major fusion device) in ~ 100 mus (≤ 0.1 MJ/m2) for a liquid lithium plasma facing component research. The existing theta pinch device, DEVeX, was built and operated for study on lithium vapor shielding effect. However, a typical plasma energy of 3 - 4 kJ/m2 is too low to study an interaction of plasma and plasma facing components in fusion devices. No or little preionized plasma, ringing of magnetic field, collisions of high energy particles with background gas have been reported as the main issues. Therefore, DEVeX is reconfigured to mitigate these issues. The new device is mainly composed of a plasma gun for a preionization source, a theta pinch for heating, and guiding magnets for a better plasma transportation. Each component will be driven by capacitor banks and controlled by high voltage / current switches. Several diagnostics including triple Langmuir probe, calorimeter, optical emission measurement, Rogowski coil, flux loop, and fast ionization gauge are used to characterize the new device. A coaxial plasma gun is manufactured and installed in the previous theta pinch chamber. The plasma gun is equipped with 500 uF capacitor and a gas puff valve. The increase of the plasma velocity with the plasma gun capacitor voltage is consistent with the theoretical predictions and the velocity is located between the snowplow model and the weak - coupling limit. Plasma energies measured with the calorimeter ranges from 0.02 - 0.065 MJ/m2 and increases with the voltage at the capacitor bank. A cross-check between the plasma energy measured with the calorimeter and the triple probe

Thin films of thermoelectric compound Mg2Sn deposited by co-sputtering assisted by multi-dipolar microwave plasma

International Nuclear Information System (INIS)

Le-Quoc, H.; Lacoste, A.; Hlil, E.K.; Bes, A.; Vinh, T. Tan; Fruchart, D.; Skryabina, N.

2011-01-01

Highlights: → Mg 2 Sn thin films deposited by plasma co-sputtering, on silicon and glass substrates. → Formation of nano-grained polycrystalline films on substrates at room temperature. → Structural properties vary with target biasing and target-substrate distance. → Formation of the hexagonal phase of Mg 2 Sn in certain deposition conditions. → Power factor ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn films doped with ∼1 at.% Ag. - Abstract: Magnesium stannide (Mg 2 Sn) thin films doped with Ag intended for thermoelectric applications are deposited on both silicon and glass substrates at room temperature by plasma assisted co-sputtering. Characterization by scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction confirms the formation of fine-grained polycrystalline thin films with thickness of 1-3 μm. Stoichiometry, microstructure and crystal structure of thin films are found to vary with target biasing and the distance from targets to substrate. Measurements of electrical resistivity and Seebeck coefficient at room temperature show the maximum power factor of ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn thin films doped with ∼1 at.% Ag.

A global plasma model for reactive deposition of compound films by modulated pulsed power magnetron sputtering discharges

Science.gov (United States)

Zheng, B. C.; Wu, Z. L.; Wu, B.; Li, Y. G.; Lei, M. K.

2017-05-01

A spatially averaged, time-dependent global plasma model has been developed to describe the reactive deposition of a TiAlSiN thin film by modulated pulsed power magnetron sputtering (MPPMS) discharges in Ar/N2 mixture gas, based on the particle balance and the energy balance in the ionization region, and considering the formation and erosion of the compound at the target surface. The modeling results show that, with increasing the N2 partial pressure from 0% to 40% at a constant working pressure of 0.3 Pa, the electron temperature during the strongly ionized period increases from 4 to 7 eV and the effective power transfer coefficient, which represents the power fraction that effectively heats the electrons and maintains the discharge, increases from about 4% to 7%; with increasing the working pressure from 0.1 to 0.7 Pa at a constant N2 partial pressure of 25%, the electron temperature decreases from 10 to 4 eV and the effective power transfer coefficient decreases from 8% to 5%. Using the modeled plasma parameters to evaluate the kinetic energy of arriving ions, the ion-to-neutral flux ratio of deposited species, and the substrate heating, the variations of process parameters that increase these values lead to an enhanced adatom mobility at the target surface and an increased input energy to the substrate, corresponding to the experimental observation of surface roughness reduction, the microstructure transition from the columnar structure to the dense featureless structure, and the enhancement of phase separation. At higher N2 partial pressure or lower working pressure, the modeling results demonstrate an increase in electron temperature, which shifts the discharge balance of Ti species from Ti+ to Ti2+ and results in a higher return fraction of Ti species, corresponding to the higher Al/Ti ratio of deposited films at these conditions. The modeling results are well correlated with the experimental observation of the composition variation and the microstructure

Effect of Energy Input on the Characteristic of AISI H13 and D2 Tool Steels Deposited by a Directed Energy Deposition Process

Science.gov (United States)

Park, Jun Seok; Park, Joo Hyun; Lee, Min-Gyu; Sung, Ji Hyun; Cha, Kyoung Je; Kim, Da Hye

2016-05-01

Among the many additive manufacturing technologies, the directed energy deposition (DED) process has attracted significant attention because of the application of metal products. Metal deposited by the DED process has different properties than wrought metal because of the rapid solidification rate, the high thermal gradient between the deposited metal and substrate, etc. Additionally, many operating parameters, such as laser power, beam diameter, traverse speed, and powder mass flow rate, must be considered since the characteristics of the deposited metal are affected by the operating parameters. In the present study, the effect of energy input on the characteristics of H13 and D2 steels deposited by a direct metal tooling process based on the DED process was investigated. In particular, we report that the hardness of the deposited H13 and D2 steels decreased with increasing energy input, which we discuss by considering microstructural observations and thermodynamics.

Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

Science.gov (United States)

Huang, Yanwei; Zhang, Qun; Xi, Junhua; Ji, Zhenguo

2012-07-01

Transparent p-type Li0.25Ni0.75O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li0.25Ni0.75O/n-SnO2:W was fabricated by depositing n-SnO2:W on top of the p-Li0.25Ni0.75O, which exhibits typical rectifying current-voltage characteristics.

Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

International Nuclear Information System (INIS)

Huang Yanwei; Zhang Qun; Xi Junhua; Ji Zhenguo

2012-01-01

Transparent p-type Li 0.25 Ni 0.75 O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li 0.25 Ni 0.75 O/n-SnO 2 :W was fabricated by depositing n-SnO 2 :W on top of the p-Li 0.25 Ni 0.75 O, which exhibits typical rectifying current-voltage characteristics.

High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

KAUST Repository

Nayak, Pradipta K.

2012-05-16

Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.

Comparison of stress in single and multiple layer depositions of plasma-deposited amorphous silicon dioxide

International Nuclear Information System (INIS)

Au, V; Charles, C; Boswell, R W

2006-01-01

The stress in a single-layer continuous deposition of amorphous silicon dioxide (SiO 2 ) film is compared with the stress within multiple-layer intermittent or 'stop-start' depositions. The films were deposited by helicon activated reactive evaporation (plasma assisted deposition with electron beam evaporation source) to a 1 μm total film thickness. The relationships for stress as a function of film thickness for single, two, four and eight layer depositions have been obtained by employing the substrate curvature technique on a post-deposition etch-back of the SiO 2 film. At film thicknesses of less than 300 nm, the stress-thickness relationships clearly show an increase in stress in the multiple-layer samples compared with the relationship for the single-layer film. By comparison, there is little variation in the film stress between the samples when it is measured at 1 μm film thickness. Localized variations in stress were not observed in the regions where the 'stop-start' depositions occurred. The experimental results are interpreted as a possible indication of the presence of unstable, strained Si-O-Si bonds in the amorphous SiO 2 film. It is proposed that the subsequent introduction of a 'stop-start' deposition process places additional strain on these bonds to affect the film structure. The experimental stress-thickness relationships were reproduced independently by assuming a linear relationship between the measured bow and film thickness. The constants of the linear model are interpreted as an indication of the density of the amorphous film structure

Development of solid oxide fuel cells by applying DC and RF plasma deposition technologies

Energy Technology Data Exchange (ETDEWEB)

Schiller, G.; Henne, R.; Lang, M.; Mueller, M. [Deutsches Zentrum fuer Luft- und Raumfahrt (DLR), Institut fuer Technische Thermodynamik, Postfach 800370, 70503 Stuttgart (Germany)

2004-04-01

Based on advanced plasma deposition technology with both DC and RF plasmas DLR Stuttgart has developed a concept of a planar SOFC with consecutive deposition of all layers of a thin-film cell onto a porous metallic substrate support. This concept is an alternative approach to conventionally used sintering techniques for SOFC fabrication without needing any sintering steps or other thermal post-treatment. Furthermore, is has the potential to be developed into an automated continous production process. For both stationary and mobile applications, adequate stack designs and stack technologies have been developed. Future development work will focus on light-weight stacks to be applied as an Auxillary Power Unit (APU) for on-board electricity supply in passenger cars and airplanes. This paper describes the plasma deposition technologies used for cell fabrication and the DLR spray concept including the resulting stack designs. The current status of development and recent progress with respect to materials development and electrochemical characterization of single cells and short-stacks is presented. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

Effect of growth interruptions on TiO{sub 2} films deposited by plasma enhanced chemical vapour deposition

Energy Technology Data Exchange (ETDEWEB)

Li, D., E-mail: dyli@yzu.edu.cn [College of Mechanical Engineering, Yangzhou University, Yangzhou, 225127 (China); Goullet, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Carette, M. [Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré, 59652, Villeneuve d' Ascq (France); Granier, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Landesman, J.P. [Institut de Physique de Rennes, UMR CNRS 6251, 263 av. Général Leclerc, 35042, Rennes (France)

2016-10-01

TiO{sub 2} films of ∼300 nm were deposited at low temperature (<140 °C) and pressure (0.4 Pa) using plasma enhanced chemical vapour deposition at the floating potential (V{sub f}) or the substrate self-bias voltage (V{sub b}) of −50 V. The impact of growth interruptions on the morphology, microstructure and optical properties of the films was investigated. The interruptions were carried out by stopping the plasma generation and gas injection once the increase of the layer thickness during each deposition step was about ∼100 nm. In one case of V{sub f}, the films of ∼300 nm exhibit a columnar morphology consisting of a bottom dense layer, an intermediate gradient layer and a top roughness layer. But the growth interruptions result in an increase of the dense layer thickness and a decrease of surface roughness. The film inhomogeneity has been identified by the in-situ real-time evolution of the kinetic ellipsometry (KE) parameters and the modeling process of spectroscopic ellipsometry (SE). The discrepancy of the refractive index measured by SE between bottom and upper layers can be reduced by growth interruptions. In the other case of V{sub b} = −50 V, the films exhibit a more compact arrangement which is homogeneous along the growth direction as confirmed by KE and SE. Both of Fourier transform infrared spectra and X-ray diffraction illustrate a phase transformation from anatase to rutile with the bias of −50 V, and also evidenced on the evolution of the refractive index dispersion curves. And a greatly increase of the refractive indice in the transparent range can be identified. However, the growth interruptions seem to have no influence on the morphology and optical properties in this case. - Highlights: • TiO{sub 2} films deposited by plasma processes at low temperature and pressure. • Influence of growth interruptions on structural and optical properties. • In-situ real-time ellipsometry measurements on film properties. • Structural and

Low energy plasma observations at synchronous orbit

International Nuclear Information System (INIS)

Reasoner, D.L.; Lennartsson, W.

1977-08-01

The University of California at San Diego Auroral Particles Experiment on the ATS-6 Satellite in synchronous orbit has detected a low-energy plasma population which is separate and distinct from both the ring current and plasma sheet populations. These observations suggest that this plasma is the outer zone of the plasmasphere. During magnetically active periods, this low energy plasma is often observed flowing sunward. In the dusk sector, enhanced plasma flow is often observed for 1-2 hours prior to the onset of a substorm-associated particle injection. (author)

RACLETTE: a model for evaluating the thermal response of plasma facing components to slow high power plasma transients. Part I: Theory and description of model capabilities

Science.gov (United States)

Raffray, A. René; Federici, Gianfranco

1997-04-01

RACLETTE (Rate Analysis Code for pLasma Energy Transfer Transient Evaluation), a comprehensive but relatively simple and versatile model, was developed to help in the design analysis of plasma facing components (PFCs) under 'slow' high power transients, such as those associated with plasma vertical displacement events. The model includes all the key surface heat transfer processes such as evaporation, melting, and radiation, and their interaction with the PFC block thermal response and the coolant behaviour. This paper represents part I of two sister and complementary papers. It covers the model description, calibration and validation, and presents a number of parametric analyses shedding light on and identifying trends in the PFC armour block response to high plasma energy deposition transients. Parameters investigated include the plasma energy density and deposition time, the armour thickness and the presence of vapour shielding effects. Part II of the paper focuses on specific design analyses of ITER plasma facing components (divertor, limiter, primary first wall and baffle), including improvements in the thermal-hydraulic modeling required for better understanding the consequences of high energy deposition transients in particular for the ITER limiter case.

RACLETTE: a model for evaluating the thermal response of plasma facing components to slow high power plasma transients. Pt. I. Theory and description of model capabilities

International Nuclear Information System (INIS)

Raffray, A.R.; Federici, G.

1997-01-01

For pt.II see ibid., p.101-30, 1997. RACLETTE (Rate Analysis Code for pLasma Energy Transfer Transient Evaluation), a comprehensive but relatively simple and versatile model, was developed to help in the design analysis of plasma facing components (PFCs) under 'slow' high power transients, such as those associated with plasma vertical displacement events. The model includes all the key surface heat transfer processes such as evaporation, melting, and radiation, and their interaction with the PFC block thermal response and the coolant behaviour. This paper represents part I of two sister and complementary papers. It covers the model description, calibration and validation, and presents a number of parametric analyses shedding light on and identifying trends in the PFC armour block response to high plasma energy deposition transients. Parameters investigated include the plasma energy density and deposition time, the armour thickness and the presence of vapour shielding effects. Part II of the paper focuses on specific design analyses of ITER plasma facing components (divertor, limiter, primary first wall and baffle), including improvements in the thermal-hydraulic modeling required for better understanding the consequences of high energy deposition transients in particular for the ITER limiter case. (orig.)

Streaming metal plasma generation by vacuum arc plasma guns

International Nuclear Information System (INIS)

MacGill, R.A.; Dickinson, M.R.; Anders, A.; Monteiro, O.R.; Brown, I.G.

1998-01-01

We have developed several different embodiments of repetitively pulsed vacuum arc metal plasma gun, including miniature versions, multicathode versions that can produce up to 18 different metal plasma species between which one can switch, and a compact high-duty cycle well-cooled version, as well as a larger dc gun. Plasma guns of this kind can be incorporated into a vacuum arc ion source for the production of high-energy metal ion beams, or used as a plasma source for thin film formation and for metal plasma immersion ion implantation and deposition. The source can also be viewed as a low-energy metal ion source with ion drift velocity in the range 20 - 200 eV depending on the metal species used. Here we describe the plasma sources that we have developed, the properties of the plasma generated, and summarize their performance and limitations. copyright 1998 American Institute of Physics

From plasma immersion ion implantation to deposition: A historical perspective on principles and trends

Energy Technology Data Exchange (ETDEWEB)

Anders, Andre

2001-06-14

Plasma immersion techniques of surface modification are known under a myriad of names. The family of techniques reaches from pure plasma ion implantation, to ion implantation and deposition hybrid modes, to modes that are essentially plasma film deposition with substrate bias. In the most general sense, all plasma immersion techniques have in common that the surface of a substrate (target) is exposed to plasma and that relatively high substrate bias is applied. The bias is usually pulsed. In this review, the roots of immersion techniques are explored, some going back to the 1800s, followed by a discussion of the groundbreaking works of Adler and Conrad in the 1980s. In the 1990s, plasma immersion techniques matured in theoretical understanding, scaling, and the range of applications. First commercial facilities are now operational. Various immersion concepts are compiled and explained in this review. While gas (often nitrogen) ion implantation dominated the early years, film-forming immersion techniques and semiconductor processing gained importance. In the 1980s and 1990s we have seen exponential growth of the field but signs of slowdown are clear since 1998. Nevertheless, plasma immersion techniques have found, and will continue to have, an important place among surface modification techniques.

Deuterium trapping in tungsten deposition layers formed by deuterium plasma sputtering

International Nuclear Information System (INIS)

Alimov, V.Kh.; Roth, J.; Shu, W.M.; Komarov, D.A.; Isobe, K.; Yamanishi, T.

2010-01-01

A study of the influence of the deposition conditions on the surface morphology and deuterium (D) concentration in tungsten (W) deposition layers formed by magnetron sputtering and in the linear plasma generator has been carried out. Thick W layers (≥0.4 μm) deposited onto copper substrates demonstrate areas of pilling and, after post-deposition heating to 1300 K, flaking-off and fracturing. For thin W layers (≤80 nm) deposited onto stainless steel (SS) and W substrates, no areas of flaking-off and fracturing exist both after deposition and after post-deposition heating to 673 K for the SS substrate and to 1300 K for the W substrate. The concentration of deuterium in the W layers was found to decrease with increasing substrate temperature and with increasing tungsten deposition rate. For layers with relatively high concentration of oxygen (0.20-0.60 O/W), a decrease of the D concentration with increasing substrate temperature is more pronounced than that for layers deposited in good vacuum conditions. To describe the evolution of the D/W ratio with the substrate temperature and the tungsten deposition rate, an empirical equation proposed by De Temmerman and Doerner [J. Nucl. Mater. 389 (2009) 479] but with alternative parameters has been used.

Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)

International Nuclear Information System (INIS)

Iwata, K.; Sakemi, T.; Yamada, A.; Fons, P.; Awai, K.; Yamamoto, T.; Shirakata, S.; Matsubara, K.; Tampo, H.; Sakurai, K.; Ishizuka, S.; Niki, S.

2005-01-01

Reactive plasma deposition (RPD) is a technique for depositing a thin film on a substrate using a pressure-slope type plasma ion gun. This method offers the advantage of low-ion damage, low deposition temperature, large area deposition and high growth rates. Ga-doped zinc oxide (ZnO) thin film was grown on a moving glass substrate by RPD. Evaporation of very small quantity of tungsten from anode electrode by plasma collision lets the resistivity of grown ZnO transparent conductive oxide (TCO) film to increase. However, no reduction of carrier concentration was observed but only reduction of carrier mobility. It indicates that reduction of evaporation of tungsten from anode electrode induces increase of carrier mobility without any increase of carrier concentration. After installation of an anode cooling system in order to avoid the tungsten evaporation, increase of the mobility (37 cm 2 /Vsec) was observed and the lowest resistivity (2.0x10 -4 no. OMEGAno. cm) film was obtained from large size grown ZnO TCO of 200x200 mm at low growth temperature of 200 deg. C with high growth rate of 24 no. muno. m/h

Deposition of Composite LSCF-SDC and SSC-SDC Cathodes by Axial-Injection Plasma Spraying

Science.gov (United States)

Harris, Jeffrey; Qureshi, Musab; Kesler, Olivera

2012-06-01

The performance of solid oxide fuel cell cathodes can be improved by increasing the number of electrochemical reaction sites, by controlling microstructures, or by using composite materials that consist of an ionic conductor and a mixed ionic and electronic conductor. LSCF (La0.6Sr0.4Co0.2Fe0.8O3-δ) and SSC (Sm0.5Sr0.5CoO3) cathodes were manufactured by axial-injection atmospheric plasma spraying, and composite cathodes were fabricated by mixing SDC (Ce0.8Sm0.2O1.9) into the feedstock powders. The plasma power was varied by changing the proportion of nitrogen in the plasma gas. The microstructures of cathodes produced with different plasma powers were characterized by scanning electron microscopy and gas permeation measurements. The deposition efficiencies of these cathodes were calculated based on the mass of the sprayed cathode. Particle surface temperatures were measured in-flight to enhance understanding of the relationship between spray parameters, microstructure, and deposition efficiency.

Comparison of cryogenic (hydrogen) and TESPEL (polystyrene) pellet particle deposition in a magnetically confined plasma

Science.gov (United States)

McCarthy, K. J.; Tamura, N.; Combs, S. K.; Panadero, N.; Ascabíbar, E.; Estrada, T.; García, R.; Hernández Sánchez, J.; López Fraguas, A.; Navarro, M.; Pastor, I.; Soleto, A.; TJ-II Team

2017-10-01

A cryogenic pellet injector (PI) and tracer encapsulated solid pellet (TESPEL) injector system has been operated in combination on the stellarator TJ-II. This unique arrangement has been created by piggy-backing a TESPEL injector onto the backend of a pipe-gun-type PI. The combined injector provides a powerful new tool for comparing ablation and penetration of polystyrene TESPEL pellets and solid hydrogen pellets, as well as for contrasting subsequent pellet particle deposition and plasma perturbation under analogous plasma conditions. For instance, a significantly larger increase in plasma line-averaged electron density, and electron content, is observed after a TESPEL pellet injection compared with an equivalent cryogenic pellet injection. Moreover, for these injections from the low-magnetic-field side of the plasma cross-section, TESPEL pellets deposit electrons deeper into the plasma core than cryogenic pellets. Finally, the physics behind these observations and possible implications for pellet injection studies are discussed.

Deposition of nanostructured photocatalytic zinc ferrite films using solution precursor plasma spraying

International Nuclear Information System (INIS)

Dom, Rekha; Sivakumar, G.; Hebalkar, Neha Y.; Joshi, Shrikant V.; Borse, Pramod H.

2012-01-01

Highlights: ► Highly economic solution precursor route capable of producing films/coating even for mass scale production. ► Pure spinel phase ZnFe 2 O 4 porous, immobilized films deposited in single step. ► Parameter optimization yields access to nanostructuring in SPPS method. ► The ecofriendly immobilized ferrite films were active under solar radiation. ► Such magnetic system display advantage w.r.t. recyclability after photocatalyst extraction. -- Abstract: Deposition of pure spinel phase, photocatalytic zinc ferrite films on SS-304 substrates by solution precursor plasma spraying (SPPS) has been demonstrated for the first time. Deposition parameters such as precursor solution pH, concentration, film thickness, plasma power and gun-substrate distance were found to control physico-chemical properties of the film, with respect to their crystallinity, phase purity, and morphology. Alkaline precursor conditions (7 2 O 4 film. Very high/low precursor concentrations yielded mixed phase, less adherent, and highly inhomogeneous thin films. Desired spinel phase was achieved in as-deposited condition under appropriately controlled spray conditions and exhibited a band gap of ∼1.9 eV. The highly porous nature of the films favored its photocatalytic performance as indicated by methylene blue de-coloration under solar radiation. These immobilized films display good potential for visible light photocatalytic applications.

Gravimetrical and chemical characterization of SiOx structures deposited on fine powders by short plasma exposure in a plasma down stream reactor

International Nuclear Information System (INIS)

Spillmann, Adrian; Sonnenfeld, Axel; Rohr, Philipp Rudolf von

2008-01-01

The surface of lactose particles was modified by a plasma-enhanced chemical vapor deposition process to improve the flow behavior of the powder. For this, the particulates were treated in a plasma down stream reactor which provides a short (50 ms) and homogeneous exposure to the capacitively coupled RF discharge. The organosilicon monomer hexamethyldisiloxane (HMDSO) was used as a precursor for the formation of SiO x which is deposited on the substrate particle surface. For varying process gas mixtures (O 2 /Ar/HMDSO) and RF power applied, the amount of the deposited material was determined gravimetrically after dissolution of the lactose substrate particles and the chemical composition of the accumulated deposition material was investigated by means of attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy. The concentration of the deposited SiO x relating to the substrate material was found to be in the range of 0.1 wt.%. Based on the ATR-FTIR analysis, the inorganic, i.e. oxidic SiO x fraction of the obtained deposits was shown to be controllable by varying the process parameters, whilst a relatively large amount of organic structures must be considered.

Properties of thin films deposited from HMDSO/O2 induced remote plasma: Effect of oxygen fraction

International Nuclear Information System (INIS)

Saloum, S.; Naddaf, M.; Al-Khaled, B.

2008-01-01

Thin films deposited from hexamethyle disiloxane (HMDSO)/O 2 mixture excited in a radio-frequency hollow cathode discharge system have been investigated for their structural, optical and corrosive properties as a function of oxygen fraction χo 2 (χo 2 =0, 0.38, 0.61, 0.76 and 0.90). It is found that the effect of oxygen fraction on films properties is related to O 2 dissociation degree (αd) behavior in pure oxygen plasma. αd has been investigated by actinometry optical emission spectroscopy (AOES) combined with double langmuir probe measurements, a maximum of O 2 dissociation degree of 15% has been obtained for 50 sccm flow rate of O 2 (χo 2 =0.61 in HMDSO/O 2 plasma). Fourier transform infrared spectroscopy (FTIR) and optical measurements showed that the behavior of both identified IR group densities and deposition rate as a function of oxygen fraction is similar to that of O 2 dissociation degree. The inorganic nature of the films depends significantly on oxygen fraction, the best inorganic structure of deposited films has been obtained for 62% HMDSO content in the mixture HMDSO/O 2 (χo 2 =0.38). The refractive index for deposited films from pure HMDSO(χo 2 =0) has been found to be higher than that of films deposited from HMDSO/O 2 mixture. In HMDSO/O 2 plasma, it has a behavior similar to that of deposition rate, and it is comparable to that of quartz. The effect of oxygen fraction on the corrosive properties of thin films deposited on steel has been investigated. It is found that the measured corrosion current density in 0.1 M KCI solution decreases with the addition of O 2 to HMDSO plasma, and it is minimum for χo 2 =0.38. (author)

Plasma technology directory

International Nuclear Information System (INIS)

Ward, P.P.; Dybwad, G.L.

1995-01-01

The Plasma Technology Directory has two main goals: (1) promote, coordinate, and share plasma technology experience and equipment within the Department of Energy; and (2) facilitate technology transfer to the commercial sector where appropriate. Personnel are averaged first by Laboratory and next by technology area. The technology areas are accelerators, cleaning and etching deposition, diagnostics, and modeling

Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition.

Science.gov (United States)

Saeed, Saba; Buters, Frank; Dohnalova, Katerina; Wosinski, Lech; Gregorkiewicz, Tom

2014-10-10

We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO(2).Optical characterization reveals two prominent emission bands centered around 2.6 eV and 3.4 eV, and tunable by excitation energy. In addition, the lower energy band shows an excitation power-dependent blue shift of up to 0.3 eV. Decay dynamics of the observed emission contains fast (nanosecond) and slow (microseconds) components, indicating contributions of several relaxation channels. Based on these material characteristics, a possible microscopic origin of the individual emission bands is discussed.

Large area ion and plasma beam sources

Energy Technology Data Exchange (ETDEWEB)

Waldorf, J. [IPT Ionen- und Plasmatech. GmbH, Kaiserslautern (Germany)

1996-06-01

In the past a number of ion beam sources utilizing different methods for plasma excitation have been developed. Nevertheless, a widespread use in industrial applications has not happened, since the sources were often not able to fulfill specific demands like: broad homogeneous ion beams, compatibility with reactive gases, low ion energies at high ion current densities or electrical neutrality of the beam. Our contribution wants to demonstrate technical capabilities of rf ion and plasma beam sources, which can overcome the above mentioned disadvantages. The physical principles and features of respective sources are presented. We report on effective low pressure plasma excitation by electron cyclotron wave resonance (ECWR) for the generation of dense homogeneous plasmas and the rf plasma beam extraction method for the generation of broad low energy plasma beams. Some applications like direct plasma beam deposition of a-C:H and ion beam assisted deposition of Al and Cu with tailored thin film properties are discussed. (orig.).

Large area ion and plasma beam sources

International Nuclear Information System (INIS)

Waldorf, J.

1996-01-01

In the past a number of ion beam sources utilizing different methods for plasma excitation have been developed. Nevertheless, a widespread use in industrial applications has not happened, since the sources were often not able to fulfill specific demands like: broad homogeneous ion beams, compatibility with reactive gases, low ion energies at high ion current densities or electrical neutrality of the beam. Our contribution wants to demonstrate technical capabilities of rf ion and plasma beam sources, which can overcome the above mentioned disadvantages. The physical principles and features of respective sources are presented. We report on effective low pressure plasma excitation by electron cyclotron wave resonance (ECWR) for the generation of dense homogeneous plasmas and the rf plasma beam extraction method for the generation of broad low energy plasma beams. Some applications like direct plasma beam deposition of a-C:H and ion beam assisted deposition of Al and Cu with tailored thin film properties are discussed. (orig.)

Formation of vertically aligned carbon nanostructures in plasmas: numerical modelling of growth and energy exchange

Energy Technology Data Exchange (ETDEWEB)

Denysenko, I; Azarenkov, N A, E-mail: idenysenko@yahoo.com [School of Physics and Technology, V N Karazin Kharkiv National University, 4 Svobody sq., 61077 Kharkiv (Ukraine)

2011-05-04

Results on modelling of the plasma-assisted growth of vertically aligned carbon nanostructures and of the energy exchange between the plasma and the growing nanostructures are reviewed. Growth of carbon nanofibres and single-walled carbon nanotubes is considered. Focus is made on studies that use the models based on mass balance equations for species, which are adsorbed on catalyst nanoparticles or walls of the nanostructures. It is shown that the models can be effectively used for the study and optimization of nanostructure growth in plasma-enhanced chemical vapour deposition. The results from these models are in good agreement with the available experimental data on the growth of nanostructures. It is discussed how input parameters for the models may be obtained.

Expanding thermal plasma chemical vapour deposition of ZnO:Al layers for CIGS solar cells

NARCIS (Netherlands)

Sharma, K.; Williams, B.L.; Mittal, A.; Knoops, H.C.M.; Kniknie, B.J.; Bakker, N.J.; Kessels, W.M.M.; Schropp, R.E.I.; Creatore, M.

2014-01-01

Aluminium-doped zinc oxide (ZnO:Al) grown by expanding thermal plasma chemical vapour deposition (ETP-CVD) has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing

Boron erosion and carbon deposition due to simultaneous bombardment with deuterium and carbon ions in plasmas

International Nuclear Information System (INIS)

Ohya, K.; Kawata, J.; Wienhold, P.; Karduck, P.; Rubel, M.; Seggern, J. von

1999-01-01

Erosion of boron out of a thin film exposed to deuterium edge plasmas and the simultaneous carbon deposition have been investigated in the tokamak TEXTOR-94 and simulated by means of a dynamic Monte Carlo code. The calculated results are compared with some observations (colorimetry, spectroscopy and AES) during and after the exposures. The implantation of carbon impurities strongly changes the effective boron sputtering yield of the film, which results into a lowering of the film erosion and a formation of thick carbon deposits. A strong decrease in the observed BII line emission around a surface location far from the plasma edge can be explained by a carbon deposition on the film. The calculated carbon depth profiles in the film, depending on the distance of the exposed surface from the plasma edge, are in reasonable agreement with measurements by AES after the exposures. Although simultaneous surface erosion and carbon deposition can be simulated, the calculated erosion rate is larger, by a factor of 2, than the observations by colorimetry at the early stage of the exposure

Effects of bias voltage on the corrosion resistance of titanium nitride thin films fabricated by dynamic plasma immersion ion implantation-deposition

International Nuclear Information System (INIS)

Tian Xiubo; Fu, Ricky K. Y.; Chu, Paul K.

2002-01-01

Dynamic plasma-based thin-film deposition incorporating ion mixing and plasma immersion is an effective technique to synthesize nitride-based hard films. We have fabricated TiN films using a filtered titanium vacuum arc in a nitrogen plasma environment. A pulsed high voltage is applied to the target for a short time when the metallic arc is fired to attain simultaneous plasma deposition and ion mixing. We investigate the dependence of the corrosion resistance and interfacial structure of the treated samples on the applied voltage. Our Auger results reveal an oxygen-rich surface film due to the non-ultra-high-vacuum conditions and high affinity of oxygen to titanium. The corrosion current is reduced by two orders of magnitude comparing the sample processed at 8 kV to the untreated sample, but the 23 kV sample unexpectedly shows worse results. The pitting potential diminishes substantially although the corrosion current is similar to that observed in the 8 kV sample. The polarization test data are consistent with our scanning electron microscopy observation, corroborating the difference in the pitting distribution and appearance. This anomalous behavior is believed to be due to the change in the chemical composition as a result of high-energy ion bombardment

Process development for synthesis and plasma spray deposition of LaPO4 and YPO4 for nuclear applications

International Nuclear Information System (INIS)

Chakravarthy, Y.; Sreekumar, K.P.; Jayakumar, S.; Thiyagarajan, T.K.; Ananthapadmanabhan, P.V.; Das, A.K.; Gantayet, L.M.; Krishnan, K.

2009-01-01

Rare earth phosphates are geologically very stable and considered as potential matrix material for nuclear waste disposal and also for many high temperature thermal barrier and corrosion barrier applications involving molten metals. This paper focuses on developmental studies related to synthesis, thermal stability and plasma spray deposition of LaPO 4 and YPO 4 . The rare earth phosphates were synthesized by chemical method from their respective oxide materials using ortho phosphoric acid. The as-precipitated powders were converted to thermal spray grade powder by compaction, sintering and crushing. Thermal stability of these phosphates up to their melting point was determined by arc plasma melting, followed by X-ray diffraction. Results indicate that LaPO 4 and YPO 4 melt congruently without decomposition. Plasma spray deposition was carried out using the in-house 40 kW atmospheric plasma spray system. Adherent coatings could be deposited on various substrates by optimizing the plasma spray parameters. (author)

Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma.

Science.gov (United States)

Knoops, Harm C M; Braeken, Eline M J; de Peuter, Koen; Potts, Stephen E; Haukka, Suvi; Pore, Viljami; Kessels, Wilhelmus M M

2015-09-09

Atomic layer deposition (ALD) of silicon nitride (SiNx) is deemed essential for a variety of applications in nanoelectronics, such as gate spacer layers in transistors. In this work an ALD process using bis(tert-butylamino)silane (BTBAS) and N2 plasma was developed and studied. The process exhibited a wide temperature window starting from room temperature up to 500 °C. The material properties and wet-etch rates were investigated as a function of plasma exposure time, plasma pressure, and substrate table temperature. Table temperatures of 300-500 °C yielded a high material quality and a composition close to Si3N4 was obtained at 500 °C (N/Si=1.4±0.1, mass density=2.9±0.1 g/cm3, refractive index=1.96±0.03). Low wet-etch rates of ∼1 nm/min were obtained for films deposited at table temperatures of 400 °C and higher, similar to that achieved in the literature using low-pressure chemical vapor deposition of SiNx at >700 °C. For novel applications requiring significantly lower temperatures, the temperature window from room temperature to 200 °C can be a solution, where relatively high material quality was obtained when operating at low plasma pressures or long plasma exposure times.

Plasma response to electron energy filter in large volume plasma device

International Nuclear Information System (INIS)

Sanyasi, A. K.; Awasthi, L. M.; Mattoo, S. K.; Srivastava, P. K.; Singh, S. K.; Singh, R.; Kaw, P. K.

2013-01-01

An electron energy filter (EEF) is embedded in the Large Volume Plasma Device plasma for carrying out studies on excitation of plasma turbulence by a gradient in electron temperature (ETG) described in the paper of Mattoo et al. [S. K. Mattoo et al., Phys. Rev. Lett. 108, 255007 (2012)]. In this paper, we report results on the response of the plasma to the EEF. It is shown that inhomogeneity in the magnetic field of the EEF switches on several physical phenomena resulting in plasma regions with different characteristics, including a plasma region free from energetic electrons, suitable for the study of ETG turbulence. Specifically, we report that localized structures of plasma density, potential, electron temperature, and plasma turbulence are excited in the EEF plasma. It is shown that structures of electron temperature and potential are created due to energy dependence of the electron transport in the filter region. On the other hand, although structure of plasma density has origin in the particle transport but two distinct steps of the density structure emerge from dominance of collisionality in the source-EEF region and of the Bohm diffusion in the EEF-target region. It is argued and experimental evidence is provided for existence of drift like flute Rayleigh-Taylor in the EEF plasma

On the enhancement of pervaporation properties of plasma-deposited hybrid silica membranes

Energy Technology Data Exchange (ETDEWEB)

Ngamou, P.H.T.; Creatore, M. [Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands); Overbeek, J.P.; Kreiter, R.; Van Veen, H.M.; Vente, J.F. [ECN, Energy research Centre of the Netherlands, Petten (Netherlands); Cuperus, P.F. [SolSep BV, Apeldoorn (Netherlands)

2013-06-24

The separation performance of a polymeric-supported hybrid silica membrane in the dehydration process of a butanol-water mixture at 95C has been enhanced by applying a bias to the substrate during the plasma deposition.

Impulse Plasma In Surface Engineering - a review

Science.gov (United States)

Zdunek, K.; Nowakowska-Langier, K.; Chodun, R.; Okrasa, S.; Rabinski, M.; Dora, J.; Domanowski, P.; Halarowicz, J.

2014-11-01

The article describes the view of the plasma surface engineering, assuming the role of non-thermal energy effects in the synthesis of materials and coatings deposition. In the following study it was underlined that the vapor excitation through the application of an electric field during coatings deposition gives new possibilities for coatings formation. As an example the IPD method was chosen. During the IPD (Impulse Plasma Deposition) the impulse plasma is generated in the coaxial accelerator by strong periodic electrical pulses. The impulse plasma is distributed in the form of energetic plasma pockets. Due to the almost completely ionization of gas, the nucleation of new phases takes place on ions directly in the plasma itself. As a result the coatings of metastable materials with nano-amorphous structure and excellent adhesion to the non-heated intentionally substrates could be deposited. Recently the novel way of impulse plasma generation during the coatings deposition was proposed and developed by our group. An efficient tool for plasma process control, the plasma forming gas injection to the interelectrode space was used. Periodic changing the gas pressure results in increasing both the degree of dispersion and the dynamics of the plasma pulses. The advantage of the new technique in deposition of coatings with exceptionally good properties has been demonstrated in the industrial scale not only in the case of the IPD method but also in the case of very well known magnetron sputtering method.

Deposition of polymer films in low pressure reactive plasmas

Energy Technology Data Exchange (ETDEWEB)

Biederman, H.

1981-12-11

Sputtering and plasma polymerization have found wide application as deposition techniques and have been extensively studied. R.f. sputtering of plastics, in particular of polytetrafluoroethylene, are discussed in the first part of this paper. In the second part, the general concept of plasma polymerization is considered and some examples of applications of plasma-polymerized films are presented. Special attention is paid to fluorocarbon and fluorochlorocarbon films. It has been suggested that these films could be used in thin film capacitors or as passivating layers for integrated circuits. In the optical field some of these films have been used as convenient moisture-resistant, protective and antireflecting coatings. Their mechanical properties have also been examined with the intention of using them for reducing surface friction. More recently some metals have been incorporated into fluorocarbon films to obtain layers with novel properties. Experiments in which films were prepared by the plasma polymerization of certain Freons are described. Some electrical and optical properties of these films are presented. High dielectric losses were obtained in a metal/film/metal sandwich configuration and the possible influence of ambient atmospheric effects on these measurements is discussed.

Synthesis of multicomponent metallic layers during impulse plasma deposition

Directory of Open Access Journals (Sweden)

Nowakowska-Langier Katarzyna

2015-12-01

Full Text Available Pulsed plasma in the impulse plasma deposition (IPD synthesis is generated in a coaxial accelerator by strong periodic electrical pulses, and it is distributed in a form of energetic plasma packets. A nearly complete ionization of gas, in these conditions of plasma generation, favors the nucleation of new phase of ions and synthesis of metastable materials in a form of coatings which are characterized by amorphous and/or nanocrystalline structure. In this work, the Fe–Cu alloy, which is immiscible in the state of equilibrium, was selected as a model system to study the possibility of formation of a non-equilibrium phase during the IPD synthesis. Structural characterization of the layers was done by means of X-ray diffraction and conversion-electron Mössbauer spectroscopy. It was found that supersaturated solid solutions were created as a result of mixing and/or alloying effects between the layer components delivered to the substrate independently and separately in time. Therefore, the solubility in the Fe–Cu system was largely extended in relation to the equilibrium conditions, as described by the equilibrium phase diagram in the solid state.

Diamond-like carbon films deposited on polycarbonates by plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Guo, C.T. [Department of Computer and Communication, Diwan College of Management, 72141 Taiwan (China)], E-mail: ctguo@dwu.edu.tw

2008-04-30

Diamond-like carbon films were coated on optical polycarbonate using plasma-enhanced chemical vapor deposition. A mixture of SiH{sub 4} and CH{sub 4}/H{sub 2} gases was utilized to reduce the internal compressive stress of the deposited films. The structure of the DLC films was characterized as a function of film thickness using Raman spectroscopy. The dependence of G peak positions and the intensity ratio of I{sub D}/I{sub G} on the DLC film thicknesses was analyzed in detail. Other studies involving atomic force microscopy, ultraviolet visible spectrometry, and three adhesion tests were conducted. Good transparency in the visible region, and good adhesion between diamond-like carbon films and polycarbonate were demonstrated. One-time recordings before and after a DLC film was coated on compact rewritable disc substrates were analyzed as a case study. The results reveal that the diamond-like carbon film overcoating the optical polycarbonates effectively protects the storage media.

Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies.

Science.gov (United States)

Faraz, Tahsin; Knoops, Harm C M; Verheijen, Marcel A; van Helvoirt, Cristian A A; Karwal, Saurabh; Sharma, Akhil; Beladiya, Vivek; Szeghalmi, Adriana; Hausmann, Dennis M; Henri, Jon; Creatore, Mariadriana; Kessels, Wilhelmus M M

2018-04-18

Oxide and nitride thin-films of Ti, Hf, and Si serve numerous applications owing to the diverse range of their material properties. It is therefore imperative to have proper control over these properties during materials processing. Ion-surface interactions during plasma processing techniques can influence the properties of a growing film. In this work, we investigated the effects of controlling ion characteristics (energy, dose) on the properties of the aforementioned materials during plasma-enhanced atomic layer deposition (PEALD) on planar and 3D substrate topographies. We used a 200 mm remote PEALD system equipped with substrate biasing to control the energy and dose of ions by varying the magnitude and duration of the applied bias, respectively, during plasma exposure. Implementing substrate biasing in these forms enhanced PEALD process capability by providing two additional parameters for tuning a wide range of material properties. Below the regimes of ion-induced degradation, enhancing ion energies with substrate biasing during PEALD increased the refractive index and mass density of TiO x and HfO x and enabled control over their crystalline properties. PEALD of these oxides with substrate biasing at 150 °C led to the formation of crystalline material at the low temperature, which would otherwise yield amorphous films for deposition without biasing. Enhanced ion energies drastically reduced the resistivity of conductive TiN x and HfN x films. Furthermore, biasing during PEALD enabled the residual stress of these materials to be altered from tensile to compressive. The properties of SiO x were slightly improved whereas those of SiN x were degraded as a function of substrate biasing. PEALD on 3D trench nanostructures with biasing induced differing film properties at different regions of the 3D substrate. On the basis of the results presented herein, prospects afforded by the implementation of this technique during PEALD, such as enabling new routes for

Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

Science.gov (United States)

Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

2017-03-01

Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

Structure of ELMs in MAST and the implications for energy deposition

International Nuclear Information System (INIS)

Kirk, A; Wilson, H R; Akers, R; Conway, N J; Counsell, G F; Cowley, S C; Dowling, J; Dudson, B; Field, A; Lott, F; Lloyd, B; Martin, R; Meyer, H; Price, M; Taylor, D; Walsh, M

2005-01-01

This paper presents a description of the spatial and temporal structure of edge-localized modes (ELMs) observed in the MAST tokamak. Filamentary enhancements of visible light are observed on photographic images of the plasma obtained during ELMs. Comparisons with simulations show that these filaments are consistent with following field lines at the outboard edge of the plasma. The toroidal mode number of these filaments has been extracted from a study of the discrete peaks observed in the ion saturation current recorded by a mid-plane reciprocating probe. A study of the time delay of these peaks with respect to the onset of the ELM has been used to calculate an effective radial velocity for the expansion of the filaments. A comparison of this derived radial velocity as a function of distance from the last closed flux surface with simulations indicates that the filament is accelerating away from the plasma. Evidence for the temporal evolution of the ELM comes from studies of outboard mid-plane Thomson scattering density profiles. In addition, a study of the toroidal velocity as a function of radius shows that during an ELM the strong velocity shear near the edge of the plasma, normally present in H-modes, is strongly reduced. The picture that emerges is that the ELM can be viewed as being composed of filamentary structures that are generated on a 100 μs timescale, accelerate away from the plasma edge, are extended along a field line and have a typical toroidal mode number ∼10. The implications of these filaments for the energy deposition on plasma facing components are discussed

Deposition of titanium nitride layers by electric arc – Reactive plasma spraying method

International Nuclear Information System (INIS)

Şerban, Viorel-Aurel; Roşu, Radu Alexandru; Bucur, Alexandra Ioana; Pascu, Doru Romulus

2013-01-01

Highlights: ► Titanium nitride layers deposited by electric arc – reactive plasma spraying method. ► Deposition of titanium nitride layers on C45 steel at different spraying distances. ► Characterization of the coatings hardness as function of the spraying distances. ► Determination of the corrosion behavior of titanium nitride layers obtained. - Abstract: Titanium nitride (TiN) is a ceramic material which possesses high mechanical properties, being often used in order to cover cutting tools, thus increasing their lifetime, and also for covering components which are working in corrosive environments. The paper presents the experimental results on deposition of titanium nitride coatings by a new combined method (reactive plasma spraying and electric arc thermal spraying). In this way the advantages of each method in part are combined, obtaining improved quality coatings in the same time achieving high productivity. Commercially pure titanium wire and C45 steel as substrate were used for experiments. X-ray diffraction analysis shows that the deposited coatings are composed of titanium nitride (TiN, Ti 2 N) and small amounts of Ti 3 O. The microstructure of the deposited layers, investigated both by optical and scanning electron microscopy, shows that the coatings are dense, compact, without cracks and with low porosity. Vickers microhardness of the coatings presents maximum values of 912 HV0.1. The corrosion tests in 3%NaCl solution show that the deposited layers have a high corrosion resistance compared to unalloyed steel substrate.

Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application

International Nuclear Information System (INIS)

Su, Meiying; Yu, Daquan; Liu, Yijun; Wan, Lixi; Song, Chongshen; Dai, Fengwei; Xue, Kai; Jing, Xiangmeng; Guidotti, Daniel

2014-01-01

The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO 2 films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. - Highlights: • Tetraethyl orthosilicate-based oxide films were deposited for packaging application. • The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400 °C. • The PECVD oxide films exhibit good step coverage. • The 400 °C PECVD oxide films exhibit low thermal stress and current leakage. • The 400 °C PECVD oxide films show high breakdown voltage and acceptable permittivity

Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application

Energy Technology Data Exchange (ETDEWEB)

Su, Meiying, E-mail: sumeiying@ime.ac.cn [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Yu, Daquan, E-mail: yudaquan@ime.ac.cn [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Jiangsu R and D Center for Internet of Things, Wuxi 214135 (China); Liu, Yijun [Piotech Co. Ltd, Shenyang 110179 (China); Wan, Lixi [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Song, Chongshen; Dai, Fengwei [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Xue, Kai [National Center for Advanced Packaging, Wuxi 214135 (China); Jing, Xiangmeng [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Guidotti, Daniel [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China)

2014-01-01

The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO{sub 2} films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. - Highlights: • Tetraethyl orthosilicate-based oxide films were deposited for packaging application. • The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400 °C. • The PECVD oxide films exhibit good step coverage. • The 400 °C PECVD oxide films exhibit low thermal stress and current leakage. • The 400 °C PECVD oxide films show high breakdown voltage and acceptable permittivity.

Plasma Process Modeling for Integrated Circuits Manufacturing

OpenAIRE

M. Meyyappan; T. R. Govindan

1998-01-01

A reactor model for plasma-based deposition and etching is presented. Two-dimensional results are discussed in terms of plasma density, ion flux, and ion energy. Approaches to develop rapid CAD-type models are discussed.

Advances in energy deposition theory

International Nuclear Information System (INIS)

Paretzke, H.G.

1980-01-01

In light of the fields of radiation protection and dosimetric problems in medicine, advances in the area of microscopic target related studies are discussed. Energy deposition is discussed with emphasis upon track structures of electrons and heavy charged particles and track computer calculations

Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150 deg. C

International Nuclear Information System (INIS)

Park, Joong-Hyun; Han, Sang-Myeon; Park, Sang-Geun; Han, Min-Koo; Shin, Moon-Young

2006-01-01

Polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated at low temperature (under 200 deg. C) have been widely investigated for flexible substrate applications such as a transparent plastic substrate. Unlike the conventional TFT process using glass substrate, the maximum process temperature should be kept less than 200 deg. C in order to avoid thermal damage on flexible substrates. We report the characteristics of nanocrystalline silicon (nc-Si) irradiated by an excimer laser. Nc-Si precursors were deposited on various buffer layers by inductively coupled plasma chemical vapour deposition (ICP-CVD) at 150 deg. C. We employed various buffer layers, such as silicon nitride (SiN X ) and silicon dioxide (SiO 2 ), in order to report recrystallization characteristics in connection with a buffer layer of a different thermal conductivity. The dehydrogenation and recrystallization was performed by step-by-step excimer laser annealing (ELA) (XeCl,λ=308 nm) in order to prevent the explosive release of hydrogen atoms. The grain size of the poly-Si film, which was recrystallized on the various buffer layers, was measured by scanning electron microscopy (SEM) at each laser energy density. The process margin of step-by-step ELA employing the SiN X buffer layer is wider than SiO 2 and the maximum grain size slightly increased

Investigations on the pyrolysis of hydrocarbons in the inductive coupled RF-plasma and the deposited pyrocarbon

International Nuclear Information System (INIS)

Eisgruber, H.; Mazurkiewicz, M.; Nickel, H.

1979-08-01

The pyrocarbon coatings of the nuclear fuel particles for the High-Temperature Reactor (HTR) are produced by pyrolysis of hydrocarbons under high temperatures. The investigations of the inductive coupled argon or argon/hydrocarbon-plasma performed in the frame of this work deliver a contribution for the clarification of pyrolysis processes and the production of pyrolytic carbons in the plasma of an electric discharge. The argon-plasma, as high-temperature source, is diagnosed theoretically and emission-spectroscopically. To the pure argon-plasma the various hydrocarbons are added. Due to the thermal decomposition the carbon is separated in solid form. The structure of the deposited pyrocarbon is composed of different components. The depositions are characterised with the principles in use at the IRW and are assigned to the fluidized bed pyrocarbons as fas as possible. (orig.) [de

Response of plasma facing components in Tokamaks due to intense energy deposition using Particle-In-Cell (PIC) methods

Science.gov (United States)

Genco, Filippo

Damage to plasma-facing components (PFC) due to various plasma instabilities is still a major concern for the successful development of fusion energy and represents a significant research obstacle in the community. It is of great importance to fully understand the behavior and lifetime expectancy of PFC under both low energy cycles during normal events and highly energetic events as disruptions, Edge-Localized Modes (ELM), Vertical Displacement Events (VDE), and Run-away electron (RE). The consequences of these high energetic dumps with energy fluxes ranging from 10 MJ/m2 up to 200 MJ/m 2 applied in very short periods (0.1 to 5 ms) can be catastrophic both for safety and economic reasons. Those phenomena can cause a) large temperature increase in the target material b) consequent melting, evaporation and erosion losses due to the extremely high heat fluxes c) possible structural damage and permanent degradation of the entire bulk material with probable burnout of the coolant tubes; d) plasma contamination, transport of target material into the chamber far from where it was originally picked. The modeling of off-normal events such as Disruptions and ELMs requires the simultaneous solution of three main problems along time: a) the heat transfer in the plasma facing component b) the interaction of the produced vapor from the surface with the incoming plasma particles c) the transport of the radiation produced in the vapor-plasma cloud. In addition the moving boundaries problem has to be considered and solved at the material surface. Considering the carbon divertor as target, the moving boundaries are two since for the given conditions, carbon doesn't melt: the plasma front and the moving eroded material surface. The current solution methods for this problem use finite differences and moving coordinates system based on the Crank-Nicholson method and Alternating Directions Implicit Method (ADI). Currently Particle-In-Cell (PIC) methods are widely used for solving

Science of mineral deposits and economics of energy

International Nuclear Information System (INIS)

Mackowsky, M.T.

1978-01-01

The availability of fossile energy carriers is investigated with regard to raw material reserves and their know deposits, by means of output and consumption. According to the author's opinion its discussion should have a priority over all discussions concerning energy crisis, energy supply and environmental protection. The author also touches the high measure of political problems beside the geoscientifical and technological problems of raw material supply. He briefly points to the general situation on the energy market with the help of data on stocks and consumption as given by the 10th International Energy Conference 1977 at Istambul and eventually deals with topics on mineral deposits science and uranium production. (HK) [de

Energy-enhanced atomic layer deposition : offering more processing freedom

NARCIS (Netherlands)

Potts, S.E.; Kessels, W.M.M.

2013-01-01

Atomic layer deposition (ALD) is a popular deposition technique comprising two or more sequential, self-limiting surface reactions, which make up an ALD cycle. Energy-enhanced ALD is an evolution of traditional thermal ALD methods, whereby energy is supplied to a gas in situ in order to convert a

Relationship between plasma parameters and film microstructure in radio frequency magnetron sputter deposition of barium strontium titanate

Science.gov (United States)

Panda, B.; Dhar, A.; Nigam, G. D.; Bhattacharya, D.; Ray, S. K.

1998-01-01

Radio frequency magnetron sputtered Ba0.8Sr0.2TiO3 thin films have been deposited on silicon and Si/SiO2/SiN/Pt substrates. The analysis of plasma discharge has been carried out using the Langmuir probe technique. Both the pressure and power have been found to influence the ion density and self-bias of the target. Introduction of oxygen into the discharge effectively decreases the ion density. The structural and electrical properties have been investigated using x-ray diffraction, atomic force microscopy of deposited films and capacitance-voltage, conductance-voltage, and current density-electric field characteristics of fabricated capacitors. The growth and orientation of the films have been found to depend upon the type of substrates and deposition temperatures. The texture in the film is promoted at a pressure 0.25 Torr with a moderately high value of ion density and low ion bombardment energy. Films deposited on Si/SiO2/SiN/Pt substrate have shown higher dielectric constant (191) and lower leakage current density (2.8×10-6 A/cm2 at 100 kV/cm) compared to that on silicon.

Magnetic energy density and plasma energy density in the Venus wake

Science.gov (United States)

Perez De Tejada, H. A.; Durand-Manterola, H. J.; Lundin, R.; Barabash, S.; Zhang, T.; Reyes-Ruiz, M.; Sauvaud, J.

2013-05-01

Magnetic energy density and plasma energy density in the Venus wake H. Pérez-de-Tejada1, H. Durand-Manterola1, R. Lundin2, S. Barabash2, T. L. Zhang3, A. Sauvaud4, M. Reyes-Ruiz5. 1 - Institute of Geophysics, UNAM, México, D. F. 2 - Swedish Institute of Space Physics, Umea, Sweden 3 - Space Research Institute, Graz, Austria 4 - CESR, Toulouse, France 5 - Institute of Astronomy, UNAM, Ensenada, México Measurements conducted in the Venus wake with the magnetometer and the Aspera-4 plasma instrument of the Venus Express spacecraft show that average values of the kinetic energy density of the plasma in that region are comparable to average local values of the magnetic energy density. Observations were carried out in several orbits of the Venus Express near the midnight plane and suggest that the total energy content in the Venus wake is distributed with nearly comparable values between the plasma and the magnetic field. Processes associated with the solar wind erosion of planetary ions from the polar magnetic regions of the ionosphere are involved in the comparable distribution of both energy components.

Temperature effect on hydrocarbon deposition on molybdenum mirrors under ITER-relevant long-term plasma operation

NARCIS (Netherlands)

Rapp, J.; van Rooij, G. J.; Litnovsky, A.; Marot, L.; De Temmerman, G.; Westerhout, J.; Zoethout, E.

2009-01-01

Optical diagnostics in ITER will rely on mirrors near the plasma and the deterioration of the reflectivity is a concern. The effect of temperature on the deposition efficiency of hydrocarbons under long-term operation conditions similar to ITER was investigated in the linear plasma generator

Optical study of plasma sprayed hydroxyapatite coatings deposited at different spray distance

Science.gov (United States)

Belka, R.; Kowalski, S.; Żórawski, W.

2017-08-01

Series of hydroxyapatite (HA) coatings deposited on titanium substrate at different spray (plasma gun to workpiece) distance were investigated. The optical methods as dark field confocal microscopy, Raman/PL and UV-VIS spectroscopy were used for study the influence of deposition process on structural degradation of HA precursor. The hydroxyl group concentration was investigated by study the OH mode intensity in the Raman spectra. Optical absorption coefficients at near UV region were analyzed by Diffuse Reflectance Spectroscopy. PL intensity observed during Raman measurement was also considered as relation to defects concentration and degradation level. It was confirmed the different gunsubstrate distance has a great impact on structure of deposited HA ceramics.

Equilibrium fluctuation energy of gyrokinetic plasma

International Nuclear Information System (INIS)

Krommes, J.A.; Lee, W.W.; Oberman, C.

1985-11-01

The thermal equilibrium electric field fluctuation energy of the gyrokinetic model of magnetized plasma is computed, and found to be smaller than the well-known result (k)/8π = 1/2T/[1 + (klambda/sub D/) 2 ] valid for arbitrarily magnetized plasmas. It is shown that, in a certain sense, the equilibrium electric field energy is minimum in the gyrokinetic regime. 13 refs., 2 figs

Comprehensive simulation of vertical plasma instability events and their serious damage to ITER plasma facing components

International Nuclear Information System (INIS)

Hassanein, A.; Sizyuk, T.

2008-01-01

Safe and reliable operation is still one of the major challenges in the development of the new generation of ITER-like fusion reactors. The deposited plasma energy during major disruptions, edge-localized modes (ELMs) and vertical displacement events (VDEs) causes significant surface erosion, possible structural failure and frequent plasma contamination. While plasma disruptions and ELM will have no significant thermal effects on the structural materials or coolant channels because of their short deposition time, VDEs having longer-duration time could have a destructive impact on these components. Therefore, modelling the response of structural materials to VDE has to integrate detailed energy deposition processes, surface vaporization, phase change and melting, heat conduction to coolant channels and critical heat flux criteria at the coolant channels. The HEIGHTS 3D upgraded computer package considers all the above processes to specifically study VDE in detail. Results of benchmarking with several known laboratory experiments prove the validity of HEIGHTS implemented models. Beryllium and tungsten are both considered surface coating materials along with copper structure and coolant channels using both smooth tubes with swirl tape insert. The design requirements and implications of plasma facing components are discussed along with recommendations to mitigate and reduce the effects of plasma instabilities on reactor components.

Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition

KAUST Repository

Zhao, Chao; Hedhili, Mohamed N.; Li, Jingqi; Wang, Qingxiao; Yang, Yang; Chen, Long; LI, LIANG

2013-01-01

The growth of TiO2 films by plasma enhanced atomic layer deposition using Star-Ti as a precursor has been systematically studied. The conversion from amorphous to crystalline TiO2 was observed either during high temperature growth or annealing

Amorphous carbon nitrogenated films prepared by plasma immersion ion implantation and deposition

International Nuclear Information System (INIS)

Rangel, Elidiane C.; Durrant, Steven F.; Rangel, Rita C.C.; Kayama, Milton E.; Landers, Richard; Cruz, Nilson C. da

2006-01-01

In this work, an investigation was conducted on amorphous hydrogenated-nitrogenated carbon films prepared by plasma immersion ion implantation and deposition. Glow discharge was excited by radiofrequency power (13.56 MHz, 40 W) whereas the substrate-holder was biased with 25 kV negative pulses. The films were deposited from benzene, nitrogen and argon mixtures. The proportion of nitrogen in the chamber feed (R N ) was varied against that of argon, while keeping the total pressure constant (1.3 Pa). From infrared reflectance-absorbance spectroscopy it was observed that the molecular structure of the benzene is not preserved in the film. Nitrogen was incorporated from the plasma while oxygen arose as a contaminant. X-ray photoelectron spectroscopy revealed that N/C and O/C atomic ratios change slightly with R N . Water wettability decreased as the proportion of N in the gas phase increased while surface roughness underwent just small changes. Nanoindentation measurements showed that film deposition by means of ion bombardment was beneficial to the mechanical properties of the film-substrate interface. The intensity of the modifications correlates well with the degree of ion bombardment

Energy expenditures of plasma method of isotope separation

International Nuclear Information System (INIS)

Karchevskij, A.I.; Potanin, E.P.

1986-01-01

The estimations are performed of specific energy expenditares in isotope separation of binary mixtures in different plasma systems with weak medium ionization (plasma centrifuge, gas discharge system with travelling magnetic field, direct current discharge). Potential advantages of plasma centrifuge over other gas discharge facilities are pointed out. The comparison of specific energy expenditure values in case of using plasma and conventional methods of isotope separation is carried out

Physical properties of chemically deposited Bi{sub 2}S{sub 3} thin films using two post-deposition treatments

Energy Technology Data Exchange (ETDEWEB)

Moreno-García, H., E-mail: hamog@ier.unam.mx [Instituto de Ciencias Físicas, Laboratorio de espectroscopia, Universidad Nacional Autónoma de México, Apartado Postal 48-3, C.P. 62210 Cuernavaca, Morelos (Mexico); Messina, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63155 Tepic, Nayarit (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Martínez, H. [Instituto de Ciencias Físicas, Laboratorio de espectroscopia, Universidad Nacional Autónoma de México, Apartado Postal 48-3, C.P. 62210 Cuernavaca, Morelos (Mexico)

2014-08-30

Highlights: • The post-deposition treatment by Ar plasma is a viable alternative to enhance the optical, electrical, morphological and structural properties of Bi{sub 2}S{sub 3} semiconductor thin films. • The plasma treatment avoids the loss in thickness of the chemically deposited Bi{sub 2}S{sub 3} thin films. • The E{sub g} values were 1.60 eV for the thermally annealed samples and 1.56 eV for the Ar plasma treated samples. • The highest value obtained for the electrical conductivity was 7.7 × 10{sup −2} (Ω cm){sup −1} in plasma treated samples. - Abstract: As-deposited bismuth sulfide (Bi{sub 2}S{sub 3}) thin films prepared by chemical bath deposition technique were treated with thermal annealed in air atmosphere and argon AC plasma. The as-deposited, thermally annealing and plasma treatment Bi{sub 2}S{sub 3} thin films have been characterized by X-ray diffraction (XRD) analysis, atomic force microscopy analysis (AFM), transmission, specular reflectance and electrical measurements. The structural, morphological, optical and electrical properties of the films are compared. The XRD analysis showed that both post-deposition treatments, transform the thin films from amorphous to a crystalline phase. The atomic force microscopy (AFM) measurement showed a reduction of roughness for the films treated in plasma. The energy band gap value of the as-prepared film was E{sub g} = 1.61 eV, while for the film thermally annealed was E{sub g} = 1.60 eV and E{sub g} = 1.56 eV for film treated with Plasma. The electrical conductivity under illumination of the as-prepared films was 3.6 × 10{sup −5} (Ω cm){sup −1}, whereas the conductivity value for the thermally annealed films was 2.0 × 10{sup −3} (Ω cm){sup −1} and for the plasma treated films the electrical conductivity increases up to 7.7 × 10{sup −2} (Ω cm){sup −1}.

High energy plasma accelerators

International Nuclear Information System (INIS)

Tajima, T.

1985-05-01

Colinear intense laser beams ω 0 , kappa 0 and ω 1 , kappa 1 shone on a plasma with frequency separation equal to the electron plasma frequency ω/sub pe/ are capable of creating a coherent large longitudinal electric field E/sub L/ = mc ω/sub pe//e of the order of 1GeV/cm for a plasma density of 10 18 cm -3 through the laser beat excitation of plasma oscillations. Accompanying favorable and deleterious physical effects using this process for a high energy beat-wave accelerator are discussed: the longitudinal dephasing, pump depletion, the transverse laser diffraction, plasma turbulence effects, self-steepening, self-focusing, etc. The basic equation, the driven nonlinear Schroedinger equation, is derived to describe this system. Advanced accelerator concepts to overcome some of these problems are proposed, including the plasma fiber accelerator of various variations. An advanced laser architecture suitable for the beat-wave accelerator is suggested. Accelerator physics issues such as the luminosity are discussed. Applications of the present process to the current drive in a plasma and to the excitation of collective oscillations within nuclei are also discussed

Integrated models for plasma/material interaction during loss of plasma confinement

International Nuclear Information System (INIS)

Hassanein, A.

1998-01-01

A comprehensive computer package, High Energy Interaction with General Heterogeneous Target Systems (HEIGHTS), has been developed to evaluate the damage incurred on plasma-facing materials during loss of plasma confinement. The HEIGHTS package consists of several integrated computer models that follow the start of a plasma disruption at the scrape-off layer (SOL) through the transport of the eroded debris and splashed target materials to nearby locations as a result of the energy deposited. The package includes new models to study turbulent plasma behavior in the SOL and predicts the plasma parameters and conditions at the divertor plate. Full two-dimensional comprehensive radiation magnetohydrodynamic models are coupled with target thermodynamics and liquid hydrodynamics to evaluate the integrated response of plasma-facing materials. A brief description of the HEIGHTS package and its capabilities are given in this work with emphasis on turbulent plasma behavior in the SOL during disruptions

Characteristics of Ge-Sb-Te films prepared by cyclic pulsed plasma-enhanced chemical vapor deposition.

Science.gov (United States)

Suk, Kyung-Suk; Jung, Ha-Na; Woo, Hee-Gweon; Park, Don-Hee; Kim, Do-Heyoung

2010-05-01

Ge-Sb-Te (GST) thin films were deposited on TiN, SiO2, and Si substrates by cyclic-pulsed plasma-enhanced chemical vapor deposition (PECVD) using Ge{N(CH3)(C2H5)}, Sb(C3H7)3, Te(C3H7)3 as precursors in a vertical flow reactor. Plasma activated H2 was used as the reducing agent. The growth behavior was strongly dependent on the type of substrate. GST grew as a continuous film on TiN regardless of the substrate temperature. However, GST formed only small crystalline aggregates on Si and SiO2 substrates, not a continuous film, at substrate temperatures > or = 200 degrees C. The effects of the deposition temperature on the surface morphology, roughness, resistivity, crystallinity, and composition of the GST films were examined.

Deposition of diamond-like carbon films by plasma source ion implantation with superposed pulse

International Nuclear Information System (INIS)

Baba, K.; Hatada, R.

2003-01-01

Diamond-like carbon (DLC) films were prepared on silicon wafer substrate by plasma source ion implantation with superposed negative pulse. Methane and acetylene gases were used as working gases for plasma. A negative DC voltage and a negative pulse voltage were superposed and applied to the substrate holder. The DC voltage was changed in the range from 0 to -4 kV and the pulse voltage was changed from 0 to -18 kV. The surface of DLC films was very smooth. The deposition rate of DLC films increased with increasing in superposed DC bias voltage. Carbon ion implantation was confirmed for the DLC film deposited from methane plasma with high pulse voltage. I D /I G ratios of Raman spectroscopy were around 1.5 independent on pulse voltage. The maximum hardness of 20.3 GPa was observed for the film prepared with high DC and high pulse voltage

Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition

International Nuclear Information System (INIS)

Kim, H.; Detavenier, C.; Straten, O. van der; Rossnagel, S.M.; Kellock, A.J.; Park, D.-G.

2005-01-01

TaN x diffusion barriers with good barrier properties at subnanometer thickness were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from pentakis(dimethylamino)Ta. Hydrogen and/or nitrogen plasma was used as reactants to produce TaN x thin films with a different nitrogen content. The film properties including the carbon and oxygen impurity content were affected by the nitrogen flow during the process. The deposited film has nanocrystalline grains with hydrogen-only plasma, while the amorphous structure was obtained for nitrogen plasma. The diffusion barrier properties of deposited TaN films for Cu interconnects have been studied by thermal stress test based on synchrotron x-ray diffraction. The results indicate that the PE-ALD TaN films are good diffusion barriers even at a small thickness as 0.6 nm. Better diffusion barrier properties were obtained for higher nitrogen content. Based on a diffusion kinetics analysis, the nanocrystalline microstructure of the films was responsible for the better diffusion barrier properties compared to polycrystalline PE-ALD TaN films deposited from TaCl 5

Simultaneous Power Deposition Detection of Two EC Beams with the BIS Analysis in Moving TCV Plasmas

Science.gov (United States)

Curchod, L.; Pochelon, A.; Decker, J.; Felici, F.; Goodman, T. P.; Moret, J.-M.; Paley, J. I.

2009-11-01

Modulation of power amplitude is a widespread to determine the radial absorption profile of externally launched power in fusion plasmas. There are many techniques to analyze the plasma response to such a modulation. The break-in-slope (BIS) analysis can draw an estimated power deposition profile for each power step up. In this paper, the BIS analysis is used to monitor the power deposition location of one or two EC power beams simultaneously in a non-stationary plasma being displaced vertically in the TCV tokamak vessel. Except from radial discrepancies, the results have high time resolution and compare well with simulations from the R2D2-C3PO-LUKE ray-tracing and Fokker-Planck code suite.

Comparative X-ray photoelectron spectroscopy study of plasma enhanced chemical vapor deposition and micro pressure chemical vapor deposition of phosphorus silicate glass layers after rapid thermal annealing

International Nuclear Information System (INIS)

Beshkov, G.; Krastev, V.; Gogova, D.; Talik, E.; Adamies, M.

2008-01-01

In this paper the bonding state of Phosphorus Silicate Glass (PSG) layers obtained by two different technological approaches, i.e. in two types of reactors: Plasma Enhanced Chemical Vapor Deposition (PECVD) and Micro Pressure Chemical Vapor Deposition (MPCVD) are investigated employing XPS and AES. The PSG layers are deposited at 380 0 C and 420 0 C in corresponding reactors. XPS and AES analyses show that Si2p peak recorded from PECVD layers are not as expected at their position characteristics of silicon dioxide but instead they are at the characteristic of elemental silicon. Plasma enhancement during deposition leads to less oxidized and more inhomogeneous layer. After rapid thermal annealing the Si2p peak is situated at position characteristic of silicon dioxide. (authors)

In situ plasma diagnostics study of a commercial high-power hollow cathode magnetron deposition tool

International Nuclear Information System (INIS)

Meng Liang; Raju, Ramasamy; Flauta, Randolph; Shin, Hyungjoo; Ruzic, David N.; Hayden, Douglas B.

2010-01-01

Using a newly designed and built plasma diagnostic system, the plasma parameters were investigated on a commercial 200 mm high-power hollow cathode magnetron (HCM) physical vapor deposition tool using Ta target under argon plasma. A three dimensional (3D) scanning radio frequency (rf)-compensated Langmuir probe was constructed to measure the spatial distribution of the electron temperature (T e ) and electron density (n e ) in the substrate region of the HCM tool at various input powers (2-15 kW) and pressures (10-70 mTorr). The T e was in the range of 1-3 eV, scaling with decreasing power and decreasing pressure. Meanwhile, n e was in the range of 4x10 10 -1x10 12 cm -3 scaling with increasing power and decreasing pressure. As metal deposits on the probe during the probe measurements, a self-cleaning plasma cup was designed and installed in the chamber to clean the tungsten probe tip. However, its effectiveness in recovering the measured plasma parameters was hindered by the metal layer deposited on the insulating probe tube which was accounted for the variation in the plasma measurements. Using a quartz crystal microbalance combined with electrostatic filters, the ionization fraction of the metal flux was measured at various input power of 2-16 kW and pressure of 5-40 mTorr. The metal ionization fraction reduced significantly with the increasing input power and decreasing gas pressure which were attributed to the corresponding variation in the ionization cross section and the residence time of the sputtered atoms in the plasma, respectively. Both the metal neutral and ion flux increased at higher power and lower pressure. The 3D measurements further showed that the ionization fraction decreased when moving up from the substrate to the cathode.

Studies of internal stress in diamond films prepared by DC plasma chemical vapour deposition

International Nuclear Information System (INIS)

Wang Wanlu; Gao Jinying; Liao Kejun; Liu Anmin

1992-01-01

The internal stress in diamond thin films deposited by DC plasma CVD was studied as a function of methane concentration and deposited temperature. Experimental results have shown that total stress in diamond thin films is sensitive to the deposition conditions. The results also indicate that the compressive stress can be explained in terms of amorphous state carbon and hydrogen, and tensile stress is ascribed to the grain boundary relaxation model due to high internal surface area and microstructure with voids

Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor–insulator–semiconductor heterojunction solar cell

Energy Technology Data Exchange (ETDEWEB)

Talkenberg, Florian, E-mail: florian.talkenberg@ipht-jena.de; Illhardt, Stefan; Schmidl, Gabriele; Schleusener, Alexander; Sivakov, Vladimir [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, D-07745 Jena (Germany); Radnóczi, György Zoltán; Pécz, Béla [Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege Miklós u. 29-33, H-1121 Budapest (Hungary); Dikhanbayev, Kadyrjan; Mussabek, Gauhar [Department of Physics and Engineering, al-Farabi Kazakh National University, 71 al-Farabi Ave., 050040 Almaty (Kazakhstan); Gudovskikh, Alexander [Nanotechnology Research and Education Centre, St. Petersburg Academic University, Russian Academy of Sciences, Hlopina Str. 8/3, 194021 St. Petersburg (Russian Federation)

2015-07-15

Semiconductor–insulator–semiconductor heterojunction solar cells were prepared using atomic layer deposition (ALD) technique. The silicon surface was treated with oxygen and hydrogen plasma in different orders before dielectric layer deposition. A plasma-enhanced ALD process was applied to deposit dielectric Al{sub 2}O{sub 3} on the plasma pretreated n-type Si(100) substrate. Aluminum doped zinc oxide (Al:ZnO or AZO) was deposited by thermal ALD and serves as transparent conductive oxide. Based on transmission electron microscopy studies the presence of thin silicon oxide (SiO{sub x}) layer was detected at the Si/Al{sub 2}O{sub 3} interface. The SiO{sub x} formation depends on the initial growth behavior of Al{sub 2}O{sub 3} and has significant influence on solar cell parameters. The authors demonstrate that a hydrogen plasma pretreatment and a precursor dose step repetition of a single precursor improve the initial growth behavior of Al{sub 2}O{sub 3} and avoid the SiO{sub x} generation. Furthermore, it improves the solar cell performance, which indicates a change of the Si/Al{sub 2}O{sub 3} interface states.

Energy transport in laser produced plasmas

International Nuclear Information System (INIS)

Key, M.H.

1989-06-01

The study of energy transport in laser produced plasmas is of great interest both because it tests and develops understanding of several aspects of basic plasma physics and also because it is of central importance in major applications of laser produced plasmas including laser fusion, the production of intense X-ray sources, and X-ray lasers. The three sections cover thermal electrons (energy transport in one dimension, plane targets and lateral transport from a focal spot, thermal smoothing, thermal instabilities), hot electrons (preheating in one dimension, lateral transport from a focal spot) and radiation (preheating in one dimension, lateral transport and smoothing, instabilities). (author)

Deposition probe measurements of impurities injected into a tokamak plasma

International Nuclear Information System (INIS)

Hildebrandt, D.; Grote, H.; Herrmann, A.

1985-01-01

Impurity confinement behaviour has been studied by using a deposition probe in conjunction with pellet injection. Generally, an exponential decay of the impurity efflux and nearly symmetric ion/electron side toroidal flows have been observed. During phases of strong plasma disturbances, asymmetric flow is seen, indicative of edge transport and prompt recycling from local sources. The application of ECRH may cause such disturbances. (author)