WorldWideScience

Sample records for plasma diodes

  1. Plasma-filled diode based on the coaxial gun

    Science.gov (United States)

    Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N.

    2012-10-01

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

  2. Plasma-filled diode based on the coaxial gun.

    Science.gov (United States)

    Zherlitsyn, A A; Kovalchuk, B M; Pedin, N N

    2012-10-01

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

  3. Plasma-filled diode based on the coaxial gun

    International Nuclear Information System (INIS)

    Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N.

    2012-01-01

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

  4. Plasma-filled diode based on the coaxial gun

    Energy Technology Data Exchange (ETDEWEB)

    Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N. [Institute of High Current Electronics, 2/3 Academichesky Avenue, 634055 Tomsk (Russian Federation)

    2012-10-15

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of {>=}1 MeV at the current of Almost-Equal-To 100 kA was obtained in the experiments with a plasma-filled diode. The energy of Almost-Equal-To 5 kJ with the peak power of {>=}100 GW dissipated in the diode.

  5. Plasma filled diodes and application to a PEOS

    International Nuclear Information System (INIS)

    Grossmann, J.M.; Ottinger, P.F.; Drobot, A.T.; Seftor, L.

    1985-01-01

    Pinched beam diodes generally begin operation at large impedances until the diode has had time to turn on (at which point strong electric fields turn on electric emission at the cathode). Current turn-on is accompanied by a sharp drop in impedance and is accomplished initially through space charge limited flow. As the current increases, the diode impedance will be determined by critical current flow when the electron beam pinches. Eventually the diode shorts out by gap closure as the high density electrode plasmas expand cross the AK gap. After turn-on, then, the diode acts as a low impedance load which is favorable for coupling to a PEOS by allowing for strong insulation of the electron flow from the PEOS to the load. It would be advantageous when using a PEOS to have the impedance of the diode low even at early times. This can be accomplished by introducing a low density plasma in the region between the cathode and the anode. The plasma initially presents the PEOS with a low impedance current path at the load as the switch opens - thereby reducing current losses upstream of the load. As the switch opens, the impedance of the diode can increase as the diode plasma erodes away, and the diode gap opens

  6. The Pierce-diode approximation to the single-emitter plasma diode

    International Nuclear Information System (INIS)

    Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

    2006-01-01

    The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the (ε,η) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions

  7. Generation conditions of CW Diode Laser Sustained Plasma

    Science.gov (United States)

    Nishimoto, Koji; Matsui, Makoto; Ono, Takahiro

    2016-09-01

    Laser sustained plasma was generated using 1 kW class continuous wave diode laser. The laser beam was focused on the seed plasma generated by arc discharge in 1 MPa xenon lamp. The diode laser has advantages of high energy conversion efficiency of 80%, ease of maintenance, compact size and availability of conventional quartz based optics. Therefore, it has a prospect of further development compared with conventional CO2 laser. In this study, variation of the plasma shape caused by laser power is observed and also temperature distribution in the direction of plasma radius is measured by optical emission spectroscopy.

  8. Foil-less plasma-filled diode for HPM generator

    International Nuclear Information System (INIS)

    Eltchaninov, A A; Kovalchuk, B M; Kurkan, I K; Zherlitsyn, A A

    2014-01-01

    Plasma-filled diode regarded as perspective source of electron beam feeding HPM generator of GW power level, comparing to conventional explosive emission vacuum diode. Electron beam generation occurs in plasma double layer, where plasma boundary plays as an anode. It allows cancelling the usage of anode foils or grids in HPM generators with the virtual cathode, which could limit its life time to few shots. The presence of ions in the e-beam drift space could raise the limiting current for a drift space, but it could affect to microwave generation also. Sectioned plasma-filled diode with beam current of about 100 kA, electron beam energy of about 0.5 MV and beam current density of 1-10 kA/cm 2 was realized. Cylindrical transport channel with the diameter of 200 mm and the length of about 30 cm was attached to the diode. Beam current measurements in a drift space were performed. Computer simulations of electron beam transport with the presence of ions were carried out with the 2.5D axisymmetric version of PiC-code KARAT. Obtained results would help optimizing electrodynamic system of HPM generator subjected to the presence of ions

  9. Hybrid simulation of electrode plasmas in high-power diodes

    International Nuclear Information System (INIS)

    Welch, Dale R.; Rose, David V.; Bruner, Nichelle; Clark, Robert E.; Oliver, Bryan V.; Hahn, Kelly D.; Johnston, Mark D.

    2009-01-01

    New numerical techniques for simulating the formation and evolution of cathode and anode plasmas have been successfully implemented in a hybrid code. The dynamics of expanding electrode plasmas has long been recognized as a limiting factor in the impedance lifetimes of high-power vacuum diodes and magnetically insulated transmission lines. Realistic modeling of such plasmas is being pursued to aid in understanding the operating characteristics of these devices as well as establishing scaling relations for reliable extrapolation to higher voltages. Here, in addition to kinetic and fluid modeling, a hybrid particle-in-cell technique is described that models high density, thermal plasmas as an inertial fluid which transitions to kinetic electron or ion macroparticles above a prescribed energy. The hybrid technique is computationally efficient and does not require resolution of the Debye length. These techniques are first tested on a simple planar diode then applied to the evolution of both cathode and anode plasmas in a high-power self-magnetic pinch diode. The impact of an intense electron flux on the anode surface leads to rapid heating of contaminant material and diode impedance loss.

  10. Anode plasma dynamics in the self-magnetic-pinch diode

    Directory of Open Access Journals (Sweden)

    Nichelle Bruner

    2011-02-01

    Full Text Available The self-magnetic-pinch diode is being developed as an intense electron beam source for pulsed-power-driven x-ray radiography. In high-power operation, the beam electrons desorb contaminants from the anode surface from which positive ions are drawn to the cathode. The counterstreaming electrons and ions establish an equilibrium current. It has long been recognized, however, that expanding electrode plasmas can disrupt this equilibrium and cause rapid reduction of the diode impedance and the radiation pulse. Recently developed numerical techniques, which enable simultaneous modeling of particle currents with 10^{13}  cm^{-3} densities to plasmas of near solid density, are applied to a model of the self-magnetic-pinch diode which includes the formation and evolution of anode surface plasmas. Two mechanisms are shown to cause rapid impedance loss, anode plasma expansion into the anode-cathode (A-K gap, and increased ion space-charge near the cathode surface. The former mechanism dominates for shorter A-K gaps, while the latter dominates for longer gaps. Model results qualitatively reproduce the time-dependent impedances measured for this diode.

  11. Cathode plasma expansion in diode with explosive emission

    International Nuclear Information System (INIS)

    Zuo Yinghong; Fan Ruyu; Wang Jianguo; Zhu Jinhui

    2012-01-01

    The evolution characteristics of the cathode plasma in a planar diode with explosive emission were analyzed. Be- sides the axial expansion which can reduce the effective anode-cathode gap, the radial expansion of the cathode plasma which can affect the effective emitting area was also taken into account. According to the Child-Langmuir law and the experimental data of current and voltage with a electron vacuum diode under four-pulse mode, the dynamics of the cathode plasma was investigated, on the assumption that the radial speeds of the cathode plasma was approximately equal to the axial speed. The results show that the radial and axial expansion speeds of the cathode plasma are 0.9-2.8 cm/μs. (authors)

  12. Plasma-filled diode experiments on PBFA-II

    International Nuclear Information System (INIS)

    Renk, T.J.; Rochau, G.E.; McDaniel, D.H.; Moore, W.B.; Zuchowski, N.; Padilla, R.

    1987-01-01

    The PBFA-II accelerator is designed to use a Plasma Opening Switch (POS) for pulse shaping and voltage multiplication using inductive storage. The vacuum section of the machine consists of a set of short magnetically insulated transmission lines (MITLs) that both act as a voltage adder for series stacking of the pulses out of the 72 parallel plate water lines, and as a 100 nH (total) storage inductor upstream of a biconically shaped POS region. There are two POS plasma injection areas, located above and below an equatorial load, which has consisted of either a short circuit, a blade (electron beam) diode, or an Applied B magnetically insulated ion diode. The POS is designed to conduct up to 6 MA, and open into a 5 ohm diode load in 10 ns or less. Under these conditions, the voltage at the load is predicted to exceed 24 MV. Initial POS experiments using these loads have produced 1) opening times of typically 20 ns or longer, 2) poor current transfer efficiency (less than 50%) when load impedances averaged 2 ohms or more, and 3) differential switch opening in azimuthal segments of the power feed, thought to be caused by poor plasma uniformity across the flashboard plasma source. One possible explanation for 2) is that efficient transfer out of the POS requires that the current carried to the load be magnetically insulated, or else considerable energy will be deposited in the feed region between the POS and load. This had indeed been observed. The problem is further exacerbated by the longer current turn-on times that occur when an ion diode is used as the load

  13. Temperature effect on protection diode for plasma-process induced charging damage

    NARCIS (Netherlands)

    Wang, Zhichun; Scarpa, A.; Smits, Sander M.; Kuper, F.G.; Salm, Cora

    2002-01-01

    In this paper, the leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the efficacy of the protection diodes in

  14. Ion production and bipolar fluxes in a high-current plasma-filled diode

    International Nuclear Information System (INIS)

    Ivanenkov, G.V.

    1982-01-01

    The model and the evolution of behaviour of binary layers (BL) in expanding plasma of high current plasma-filled diode are described. The model estimates ion current and the laws of plasma expansion at the stage of BL intensive growth. The density range (10 12 -10 15 cm -3 ) is determined in which diode impedance growth takes place in connection with BL appearance. The density of ion current at the outlet of diode is 10 A/cm 2

  15. The impact of plasma dynamics on the self-magnetic-pinch diode impedance

    International Nuclear Information System (INIS)

    Bennett, Nichelle; Crain, M. Dale; Droemer, Darryl W.; Gignac, Raymond E.; Molina, Isidro; Obregon, Robert; Smith, Chase C.; Wilkins, Frank L.; Welch, Dale R.; Webb, Timothy J.; Mazarakis, Michael G.; Kiefer, Mark L.; Johnston, Mark D.; Leckbee, Joshua J.; Nielsen, Dan; Romero, Tobias; Simpson, Sean; Ziska, Derek

    2015-01-01

    The self-magnetic-pinch diode is being developed as an intense electron beam source for pulsed-power-driven x-ray radiography. The basic operation of this diode has long been understood in the context of pinched diodes, including the dynamic effect that the diode impedance decreases during the pulse due to electrode plasma formation and expansion. Experiments being conducted at Sandia National Laboratories' RITS-6 accelerator are helping to characterize these plasmas using time-resolved and time-integrated camera systems in the x-ray and visible. These diagnostics are analyzed in conjunction with particle-in-cell simulations of anode plasma formation and evolution. The results confirm the long-standing theory of critical-current operation with the addition of a time-dependent anode-cathode gap length. The results may suggest that anomalous impedance collapse is driven by increased plasma radial drift, leading to larger-than-average ion v r × B θ acceleration into the gap

  16. Plasma spectroscopy diagnostics in pulsed-power X-ray radiography diode research

    International Nuclear Information System (INIS)

    Maron, Yitzhak; Oliver, Bryan Velten; Portillo, Salvador; Johnston, Mark D.; Rose, David Vincent; Hahn, Kelly Denise; Schamiloglu, Edl; Welch, Dale R.; Droemer, Darryl W.; Rovang, Dean Curtis; Maenchen, John Eric

    2005-01-01

    Spectroscopic investigations in the visible and near UV are underway to study plasmas present in X-ray radiography diodes during the time of the electron beam propagation. These studies are being performed on the RITS-3 accelerator (5.25 MV and 120 kA) at Sandia National Laboratories using several diode configurations. The proper characterization of the plasmas occurring during the time of the X-ray pulse can lead to a greater understanding of diode behavior and X-ray spot size evolution. By studying these plasmas along with the use of selective dopants, insights into such phenomena as impedance collapse, thermal and non-thermal species behavior, charge and current neutralization, anode and cathode plasma formation and propagation, and beam/foil interactions, can be obtained. Information from line and continuum emission and absorption can give key plasma parameters such as temperatures, densities, charge states, and expansion velocities. This information is important for proper modeling and future predictive capabilities for the design and improvement of flash X-ray radiography diodes. Diagnostics include a gated, intensified multichannel plate camera combined with a 1 meter Czerny-Turner monochromator with a multi-fiber spectral input, allowing for both temporal and spatial resolution. Recent results are presented.

  17. Simulative research on the expansion of cathode plasma in high-current electron beam diode

    International Nuclear Information System (INIS)

    Xu Qifu; Liu Lie

    2012-01-01

    The expansion of cathode plasma has long been recognized as a limiting factor in the impedance lifetime of high-current electron beam diode. Realistic modeling of such plasma is of great necessity in order to discuss the dynamics of cathode plasma. Using the method of particle-in-cell, the expansion of cathode plasma is simulated in this paper by a scaled-down diode model. It is found that the formation of cathode plasma increases the current density in the diode. This consequently leads to the decrease of the potential at plasma front. Once the current density has been increased to a certain value, the potential at plasma front would then be equal to or lower than the plasma potential. Then the ions would move towards the anode, and the expansion of cathode plasma is thereby formed. Different factors affecting the plasma expansion velocity are discussed in this paper. It is shown that the decrease of proton genatation rate has the benefit of reducing the plasma expansion velocity.

  18. Study on the plasma diode in the external magnetic field

    International Nuclear Information System (INIS)

    Korenev, S.A.

    1981-01-01

    The experimental investigations of plasma diode with cathode plasma formation on the basis of an incomplete charge over dielectric surface in the external longitudinal magnetic field with the intensity of Hsub(z) up to 2000 Oe are presented. It is demonstrated that at the 150-250 keV diode voltage and the current density of up to 300 A/cm 2 the homogeneity of the current density over transverse cross section is preserved up to the cell size of metallic grid onto cathode with the change of the magnetic field up to 2000 Oe [ru

  19. Optical diagnosis system for intense electron beam diode plasma

    International Nuclear Information System (INIS)

    Yang Jie; Shu Ting; Zhang Jun; Fan Yuwei; Yang Jianhua; Liu Lie; Yin Yi; Luo Ling

    2012-01-01

    A nanosecond time-resolved imaging platform for diode plasmas diagnostics has been constructed based on the pulsed electron beam accelerator and high speed framing camera (HSFC). The accelerator can provide an electrical pulse with voltages of 200-500 kV, rise-time (from 10% to 90% amplitude) of 25 ns and duration of 110 ns. The diode currents up to kA level can be extracted. The trigger signal for camera was picked up by a water-resistor voltage divider after the main switch of the accelerator, which could avoid the disadvantageous influence of the time jitter caused by the breakdown of the gas gaps. Then the sampled negative electrical pulse was converted into a transistor-transistor logic (TTL) signal (5 V) with rise time of about 1.5 ns and time jitter less than 1 ns via a processor. And this signal was taken as the synchronization time base. According to the working characteristics of the camera, the synchronization scheme relying mainly on electrical pulse delay method supplemented by light signal delay method was determined to make sure that the camera can work synchronously with the light production and transportation from the diode plasma within the time scale of nanosecond. Moreover, shielding and filtering methods were used to restrain the interference on the measurement system from the accelerator. Finally, time resolved 2-D framing images of the diode plasma were acquired. (authors)

  20. Improved performance of a plasma filled diode when driven by a PEOS

    International Nuclear Information System (INIS)

    Goyer, J.R.; Barreto, G.; Sincerny, P.S.; Krishnan, M.

    1988-01-01

    The plasma filled diode (PFD) has been used successfully to provide pulse compression and power multiplication for the fast Marx bank EYESS at Physics International. It has been found that the addition of a plasma erosion opening switch (PEOS) between the Marx bank and PFD increases the voltage and power at the diode while reducing the FWHM of the power pulse. Typical results obtained when using the PFD alone are power pulsewidths of 150 ns (FWHM) with a peak power of 500 GW at 1.1 MV. When the PEOS is included, the power pulsewidth narrows to 90 ns (FWHM) and the peak power increases to 550 GW at 1.5 MV. A description is given of the Marx bank, diode hardware, and plasma injection technique along with a presentation of diagnostic waveforms

  1. Magnetically insulated ion diode with a gas-breakdown plasma anode

    International Nuclear Information System (INIS)

    Greenly, J.B.; Ueda, M.; Rondeau, G.D.; Hammer, D.A.

    1987-12-01

    An active anode plasma source has been developed for use in a magnetically insulated ion diode operated on a 10 sup(10)W pulsed power generator. This source uses an inductive voltage from a single turn coil to break down an annular gas puff produced by a supersonic nozzle. The resulting plasma is magnetically driven toward the radial insulating magnetic field in the diode accelerating gap and stagnates at a well-defined surface after about 300ns to form a plasma anode layer defined by magnetic flux surfaces. An ion beam is then extracted from this plasma layer by applying a 150kV, 1 μs pulse to the accelerating gap. Optimization of the timing of the gas puff, the plasma production discharge and the high voltage pulse has resulted in 1μs duration 75-150KeV ion beam pulses with >100A/cm sup(2) peak ion current density over an area of about 400cm sup(2). Up to 5J/cm sup(2) has been collected by a 4cm sup(2) calorimeter. The diode impedance history can be varied so that rising, flat, and falling voltage pulse waveforms can be produced. Streak photographs of beamlets impinging on a scintillator and time integrated targets both show beam divergence angles ≤3 sup(0). However, under certain operating conditions, large excursions (∼25 sup(0)) in mean aiming angle on time scales of 20-200ns are observed. (author)

  2. To the problem of electron beam production in plasma diodes

    International Nuclear Information System (INIS)

    Korenev, S.A.

    1982-01-01

    The results of exprriments on electrOn beam generation from plasma emitting surfaces formed by incompleted charged over the dielectric surface, sliding charge over the dielectric surface covered with a layer of barium oxide, discharge due to explosion-emission effects. The experiments have shown that the formed plasma of sliding discharge and discharge in explosion-emission effects is rather homogeneous and the electron beam has the current density homogeneity in the transverse cross section of approximation 20%. At the diode voltage of 150-300 kV the density of electron current for diodes with cathode on the basis of the sliding charge is approximately 0.4-1.0 kA/cm 2 , while for diodes with cathode made of graphite with metallic grid it is approximately 0.5-1.3 kA/cm 2 . The average gap between anode and cathode is 1 cm for both cases

  3. Plasma opening switch studies of the applied Bz diode on the LION accelerator

    International Nuclear Information System (INIS)

    Struckman, C.K.; Kusse, B.R.; Meyerhofer, D.D.; Rondeau, G.

    1988-01-01

    The LION accelerator, 1.5 MV, 4Ω, at Cornell University is being used to study the characteristics of an applied B z , or, barrel diode. A plasma opening switch (POS) has been used to shape the voltage pulse seen by the diode. The results of a series of experiments utilizing a POS are presented. The plasma switch geometry is unique, with the plasma source located inside the center conductor of a coaxial transmission line. The switch region is located between the 17 cm radius anode and the 23 cm radius cathode. The switch is constructed of a flashboard plasma source bent into an azimuthally symmetric ring. The axial length of the plasma is only about 2 cm; which is much smaller than the switch radius. The plasma diffuses into the anode-cathode space through axially oriented slots in the anode. The plasma in the switch region has been characterized during static testing (no generator pulse) using Faraday cups. By using time of flight calculations, the Faraday cups give rough estimates of both the plasma density and velocity. Since the generator pulse is so short (100 ns) these static characterizations are indicative of the plasma when the voltage pulse is present. This low density, fast plasma produced the best results for the diode voltage pulse. Results from recently constructed Langmuir probes are also presented

  4. Fabrication and characterization of the charge-plasma diode

    NARCIS (Netherlands)

    Rajasekharan, B.; Hueting, Raymond Josephus Engelbart; Salm, Cora; van Hemert, T.; Wolters, Robertus A.M.; Schmitz, Jurriaan

    2010-01-01

    We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low

  5. Effect of cathode and anode plasma motion on current characteristics of pinch diode

    International Nuclear Information System (INIS)

    Yang Hailiang; Qiu Aici; Sun Jianfeng; Li Jingya; He Xiaoping; Tang Junping; Li Hongyu; Wang Haiyang; Huang Jianjun; Ren Shuqing; Yang Li; Zou Lili

    2005-01-01

    The preliminary research results for the effect of cathode and anode plasma motion on current characteristics of the pinch ion diode on FLASH II accelerator are reported. The structure and principle of pinch reflex ion beam diode are introduced. The time dependent evolution of electron and ion flow in large aspect-ratio relativistic diodes is studied by analytic models. The equation of Child-langmuir, weak focused-flow, strong focused-flow and parapotential flow are corrected to reduce the diode A-C gap caused by the motion of cathode and anode plasma. The diode current and ion current are calculated with these corrected equations, and the results are consistent with the experimental data. The methods of increasing ion current and efficiency are also presented. The high power ion beam peak current about 160 kA with a peak energy about 500 keV was produced using water-dielectric transmission-line generators with super-pinch reflex ion diodes on FLASH II accelerator at Northwest Institute of Nuclear Technology (NINT). (authors)

  6. Diode with plasma cathode on the basis of a sliding discharge

    International Nuclear Information System (INIS)

    Korenev, S.A.

    1982-01-01

    The operative regime of a diode with plasma cathode on the basis of a discharge sliding over the surface of dielectric without an additional switching - on discharge generator at the glance of capacity couplings of anode and cathode assemblies is described. It is experimentally shown that at the voltage at the diode of about 150-300 kV electron beams with the 400-1000 A/cm current density can be formed. The velocity of cathode plasma motion in the direction of anode for different materials of dielctric insertion in a cathode assembly amounts to (1.5-10)x10 5 cm/s

  7. Explosive-Emission Plasma Dynamics in Ion Diode in Double-Pulse Mode

    International Nuclear Information System (INIS)

    Pushkarev, Alexander I.; Isakova, Yulia I.

    2011-01-01

    The results of an experimental investigation of explosive-emission plasma dynamics in an ion diode with self-magnetic insulation are presented. The investigations were accomplished at the TEMP-4M accelerator set in a mode of double pulse formation. Plasma behaviour in the anode-cathode gap was analyzed according to both the current-voltage characteristics of the diode (time resolution of 0.5 ns) and thermal imprints on a target (spatial resolution of 0.8 mm). It was shown that when plasma formation at the potential electrode was complete, and up until the second (positive) pulse, the explosive-emission plasma expanded across the anode-cathode gap with a speed of 1.3±0.2 cm/μs. After the voltage polarity at the potential electrode was reversed (second pulse), the plasma erosion in the anode-cathode gap (similar to the effect of a plasma opening switch) occurred. During the generation of an ion beam the size of the anode-cathode gap spacing was determined by the thickness of the plasma layer on the potential electrode and the layer thickness of the electrons drifting along the grounded electrode. (15th asian conference on electrical discharge)

  8. Development of intense pulsed heavy ion beam diode using gas puff plasma gun as ion source

    International Nuclear Information System (INIS)

    Ito, H.; Higashiyama, M.; Takata, S.; Kitamura, I.; Masugata, K.

    2006-01-01

    A magnetically insulated ion diode with an active ion source of a gas puff plasma gun has been developed in order to generate a high-intensity pulsed heavy ion beam for the implantation process of semiconductors and the surface modification of materials. The nitrogen plasma produced by the plasma gun is injected into the acceleration gap of the diode with the external magnetic field system. The ion diode is operated at diode voltage approx. =200 kV, diode current approx. =2 kA and pulse duration approx. =150 ns. A new acceleration gap configuration for focusing ion beam has been designed in order to enhance the ion current density. The experimental results show that the ion current density is enhanced by a factor of 2 and the ion beam has the ion current density of 27 A/cm 2 . In addition, the coaxial type Marx generator with voltage 200 kV and current 15 kA has been developed and installed in the focus type ion diode. The ion beam of ion current density approx. =54 A/cm 2 is obtained. To produce metallic ion beams, an ion source by aluminum wire discharge has been developed and the aluminum plasma of ion current density ∼70 A/cm 2 is measured. (author)

  9. Anode plasma and focusing reb diodes

    International Nuclear Information System (INIS)

    Goldstein, S.A.; Swain, D.W.; Hadley, G.R.; Mix, L.P.

    1975-01-01

    The use of electrical, optical, x-ray, and particle diagnostics to characterize the production of anode plasma and to monitor its influence on beam generation and focusing is reviewed. Studies using the Nereus accelerator show that after cathode turn-on, deposition of several kJ/gm on the anode is necessary before ions from hydrocarbons, adsorbed gases, and heavier metallic species are detected. The actual time at which ions are liberated depends on several factors, one of which is the specific heat of the anode substrate. Once formed, anode ions cross the A-K gap (with an energy equal to the diode voltage) and interact with the cathode to produce an axially peaked beam profile, a ''pinch'' which does not follow the critical current criterion. Experiments with externally generated anode plasma show that this type of pinch can be attracted to localized areas on the anode. Preliminary observations on Hydra indicate the anode plasma composition is similar to that on Nereus. The effect of this plasma on pinch dynamics currently is under investigation

  10. Time-resolved tunable diode laser absorption spectroscopy of pulsed plasma

    Czech Academy of Sciences Publication Activity Database

    Adámek, Petr; Olejníček, Jiří; Čada, Martin; Kment, Š.; Hubička, Zdeněk

    2013-01-01

    Roč. 38, č. 14 (2013), s. 2428-2430 ISSN 0146-9592 R&D Projects: GA MŠk LH12045; GA ČR(CZ) GAP205/11/0386; GA MŠk LD12002; GA MŠk LH12043 Institutional support: RVO:68378271 Keywords : diode laser s * plasma diagnostics * absorption spectroscopy * time resolved Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 3.179, year: 2013

  11. Self-magnetically-insulated 'plasma-focus diode' as a new source of an intence pulsed light-ion beam

    International Nuclear Information System (INIS)

    Takahashi, Akira; Aga, Keigo; Masugata, Katsumi; Ito, Michiaki; Yatsui, Kiyoshi

    1986-01-01

    A new and simple type of self-magnetically-insulated diode named ''Plasma-Focus Diode'' has been successfully developed, where anode and cathode are constituted by a pair of coaxial cylindrical electrodes similarly to a Mather-type plasma-focus device. Operating conditions are typically as follows: inductively-calibrated diode voltage ∼ 660 kV, diode current ∼ 142 kA, total ion current ∼ 32 kA, pulse width ∼ 90 ns and diode efficiency ∼ 22 %. Multiple-shots operation more than 50 shots has been possible without changing flashboard. Local divergence angle has been observed to be 0.9 deg ∼ 1.6 deg. Using such a simple ion diode, we have demonstrated a possibility of high concentration of beam-power density onto a target placed at the center. (author)

  12. Investigation of mechanism of anode plasma formation in ion diode with dielectric anode

    International Nuclear Information System (INIS)

    Pushkarev, A.

    2015-01-01

    The results of investigation of the anode plasma formation in a diode with a passive anode in magnetic insulation mode are presented. The experiments have been conducted using the BIPPAB-450 ion accelerator (350–400 kV, 6–8 kA, 80 ns) with a focusing conical diode with B r external magnetic field (a barrel diode). For analysis of plasma formation at the anode and the distribution of the ions beam energy density, infrared imaging diagnostics (spatial resolution of 1–2 mm) is used. For analysis of the ion beam composition, time-of-flight diagnostics (temporal resolution of 1 ns) were used. Our studies have shown that when the magnetic induction in the A-C gap is much larger than the critical value, the ion beam energy density is close to the one-dimensional Child-Langmuir limit on the entire working surface of the diode. Formation of anode plasma takes place only by the flashover of the dielectric anode surface. In this mode, the ion beam consists primarily of singly ionized carbon ions, and the delay of the start of formation of the anode plasma is 10–15 ns. By reducing the magnetic induction in the A-C gap to a value close to the critical one, the ion beam energy density is 3–6 times higher than that calculated by the one-dimensional Child-Langmuir limit, but the energy density of the ion beam is non-uniform in cross-section. In this mode, the anode plasma formation occurs due to ionization of the anode material with accelerated electrons. In this mode, also, the delay in the start of the formation of the anode plasma is much smaller and the degree of ionization of carbon ions is higher. In all modes occurred effective suppression of the electronic component of the total current, and the diode impedance was 20–30 times higher than the values calculated for the mode without magnetic insulation of the electrons. The divergence of the ion beam was 4.5°–6°

  13. Measuring Plasma Formation Field Strength and Current Loss in Pulsed Power Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, Mark D. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Patel, Sonal G. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Falcon, Ross Edward [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Cartwright, Keith [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Kiefer, Mark L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Cuneo, Michael E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Maron, Yitzhak [Weizmann Inst. of Science, Rehovot (Israel)

    2017-11-01

    This LDRD investigated plasma formation, field strength, and current loss in pulsed power diodes. In particular the Self-Magnetic Pinch (SMP) e-beam diode was studied on the RITS-6 accelerator. Magnetic fields of a few Tesla and electric fields of several MV/cm were measured using visible spectroscopy techniques. The magnetic field measurements were then used to determine the current distribution in the diode. This distribution showed that significant beam current extends radially beyond the few millimeter x-ray focal spot diameter. Additionally, shielding of the magnetic field due to dense electrode surface plasmas was observed, quantified, and found to be consistent with the calculated Spitzer resistivity. In addition to the work on RITS, measurements were also made on the Z-machine looking to quantify plasmas within the power flow regions. Measurements were taken in the post-hole convolute and final feed gap regions on Z. Dopants were applied to power flow surfaces and measured spectroscopically. These measurements gave species and density/temperature estimates. Preliminary B-field measurements in the load region were attempted as well. Finally, simulation work using the EMPHASIS, electromagnetic particle in cell code, was conducted using the Z MITL conditions. The purpose of these simulations was to investigate several surface plasma generations models under Z conditions for comparison with experimental data.

  14. Diode laser irradiation of rat blood and its effect on hemoglobin and plasma

    International Nuclear Information System (INIS)

    Saad-El-Din, A.A.; El-Ahdaal, M.A.; Omran, M.F.

    2002-01-01

    Blood was exposed to diode laser irradiation of wavelength 830 nm and maximum powe of 31.4 MW, with exposure times 15, 30, 45 and 60 minutes. Hemoglobin IR spectra and X-ray crystallography, plasma Na + , K + , Ca + +. cholesterol concentrations and viscosity were measured. There were changes in hemoglobin amide groups as well as changes in the X-ray in hemoglobin structure. Decreases in both Na concentration and plasma viscosity occurred at 15 and 30 minutes of laser exposure. On increasing time to 45 and 60 minutes, the Na concentration and viscosity were increased. K, Ca and cholesterol concentration were decreased linearly with time. Na / K ratio was increased also with time of exposure. The results have been indicated that the diode laser affect the secondary structure of hemoglobin, membranes structures and plasma

  15. Development of high performance Schottky barrier diode and its application to plasma diagnostics

    International Nuclear Information System (INIS)

    Fujita, Junji; Kawahata, Kazuo; Okajima, Shigeki

    1993-10-01

    At the conclusion of the Supporting Collaboration Research on 'Development of High Performance Detectors in the Far Infrared Range' carried out from FY1990 to FY1992, the results of developing Schottky barrier diode and its application to plasma diagnostics are summarized. Some remarks as well as technical know-how for the correct use of diodes are also described. (author)

  16. Characterisation of Plasma Filled Rod Pinch electron beam diode operation

    Science.gov (United States)

    MacDonald, James; Bland, Simon; Chittenden, Jeremy

    2016-10-01

    The plasma filled rod pinch diode (aka PFRP) offers a small radiographic spot size and a high brightness source. It operates in a very similar to plasma opening switches and dense plasma focus devices - with a plasma prefill, supplied via a number of simple coaxial plasma guns, being snowploughed along a thin rod cathode, before detaching at the end. The aim of this study is to model the PFRP and understand the factors that affect its performance, potentially improving future output. Given the dependence on the PFRP on the prefill, we are making detailed measurements of the density (1015-1018 cm-3), velocity, ionisation and temperature of the plasma emitted from a plasma gun/set of plasma guns. This will then be used to provide initial conditions to the Gorgon 3D MHD code, and the dynamics of the entire rod pinch process studied.

  17. X-ray radiation source based on a plasma filled diode

    Energy Technology Data Exchange (ETDEWEB)

    Popkov, N F; Kargin, V I; Ryaslov, E A; Pikar, A S [All-Russian Research Inst. of Experimental Physics, Sarov (Russian Federation). Russian Federal Nuclear Center

    1997-12-31

    The results are given of studies on a plasma X-ray source providing 2.5 krad of radiation dose per pulse over an area of 100 cm{sup 2} in the quantum energy range between 20 and 500 keV. The pulse duration was 100 ns. The spectral radiation distribution was obtained under various operating conditions of plasma and diode. A Marx generator served as the starting power source of 120 kJ with a discharge time of T/4=10{sup -6} s. A short electromagnetic pulse (10{sup -7} s) was shaped using plasma erosion opening switches. (author). 5 figs., 4 refs.

  18. Analytic theory of the Rayleigh-Taylor instability in a uniform density plasma-filled ion diode

    International Nuclear Information System (INIS)

    Hussey, T.W.; Payne, S.S.

    1987-04-01

    The J-vector x B-vector forces associated with the surface current of a plasma-filled ion diode will accelerate this plasma fill toward the anode surface. It is well known that such a configuration with a high I is susceptible to the hydromagnetic Rayleigh-Taylor instability in certain geometries. A number of ion diode plasma sources have been proposed, most of which have a falling density going away from the wall. A somewhat more unstable case, however, is that of uniform density. In this report we attempt to establish an upper limit on this effect with a simple analytic model in which a uniform-density plasma is accelerated by the magnetic field anticipated in a PBFA-II diode. We estimate the number of linear e-foldings experienced by an unstable surface as well as the most damaging wavelength initial perturbation. This model, which accounts approximately for stabilization due to field diffusion, suggests that even with a uniform fill, densities in excess of a few 10 15 are probably not damaged by the instability. In addition, even lower densities might be tolerated if perturbations near the most damaging wavelength can be kept very small

  19. Monitoring Temperature in High Enthalpy Arc-heated Plasma Flows using Tunable Diode Laser Absorption Spectroscopy

    Science.gov (United States)

    Martin, Marcel Nations; Chang, Leyen S.; Jeffries, Jay B.; Hanson, Ronald K.; Nawaz, Anuscheh; Taunk, Jaswinder S.; Driver, David M.; Raiche, George

    2013-01-01

    A tunable diode laser sensor was designed for in situ monitoring of temperature in the arc heater of the NASA Ames IHF arcjet facility (60 MW). An external cavity diode laser was used to generate light at 777.2 nm and laser absorption used to monitor the population of electronically excited oxygen atoms in an air plasma flow. Under the assumption of thermochemical equilibrium, time-resolved temperature measurements were obtained on four lines-of-sight, which enabled evaluation of the temperature uniformity in the plasma column for different arcjet operating conditions.

  20. Anode plasma dynamics in an extraction applied-B ion diode: effects on divergence, ion species and parasitic load

    International Nuclear Information System (INIS)

    Greenly, J.B.; Appartaim, R.K.; Olson, J.C.

    1996-01-01

    Analysis of data from the LION (1.2 MV, 300 kA, 40 ns) extraction applied-B diode allows a number of inferences regarding the effect of anode plasma dynamics on ion beam divergence, ion species composition, and diode impedance and power coupling. The two dominant features of anode plasma dynamics observed on LION are (1) plasma expansion away from the solid anode surface and into the accelerating gap during the beam pulse, and (2) evolution of the composition of the plasma during the pulse. The data presented in this paper characterize the plasma expansion, and suggest a possible picture of the mechanism of the plasma dynamics that could produce these basic features. (J.U.). 2 figs., 5 refs

  1. Anode plasma dynamics in an extraction applied-B ion diode: effects on divergence, ion species and parasitic load

    Energy Technology Data Exchange (ETDEWEB)

    Greenly, J B; Appartaim, R K; Olson, J C [Cornell Univ., Ithaca, NY (United States). Lab. of Plasma Studies

    1997-12-31

    Analysis of data from the LION (1.2 MV, 300 kA, 40 ns) extraction applied-B diode allows a number of inferences regarding the effect of anode plasma dynamics on ion beam divergence, ion species composition, and diode impedance and power coupling. The two dominant features of anode plasma dynamics observed on LION are (1) plasma expansion away from the solid anode surface and into the accelerating gap during the beam pulse, and (2) evolution of the composition of the plasma during the pulse. The data presented in this paper characterize the plasma expansion, and suggest a possible picture of the mechanism of the plasma dynamics that could produce these basic features. (J.U.). 2 figs., 5 refs.

  2. Experimental research on time-resolved evolution of cathode plasma expansion velocity in a long pulsed magnetically insulated coaxial diode

    Science.gov (United States)

    Zhu, Danni; Zhang, Jun; Zhong, Huihuang; Ge, Xingjun; Gao, Jingming

    2018-02-01

    Unlike planar diodes, separate research of the axial and radial plasma expansion velocities is difficult for magnetically insulated coaxial diodes. Time-resolved electrical diagnostic which is based on the voltage-ampere characteristics has been employed to study the temporal evolution of the axial and radial cathode plasma expansion velocities in a long pulsed magnetically insulated coaxial diode. Different from a planar diode with a "U" shaped profile of temporal velocity evolution, the temporal evolution trend of the axial expansion velocity is proved to be a "V" shaped profile. Apart from the suppression on the radial expansion velocity, the strong magnetic field is also conducive to slowing down the axial expansion velocity. Compared with the ordinary graphite cathode, the carbon velvet and graphite composite cathode showed superior characteristics as judged by the low plasma expansion velocity and long-term electrical stability as a promising result for applications where long-pulsed and reliable operation at high power is required.

  3. On the instability of a quasivacuum regime in a plasma diode

    International Nuclear Information System (INIS)

    Zharinov, A.V.; Chikhachev, A.S.

    1978-01-01

    Instability of the plasma diode stationary state developing in the quasivacuum overcompensated regime is investigated by the method of plasma simulation with the charged sheet system. It is shown that instability developes during the time of the order of the electron transit time through the interelectrode space and is due to electron motion. Specific scale of growings disturbances decreases with current increase of electron emission and diminution of compensating parameter. Instability develops at current value exceeding critical one. The results obtained show, that instability under investigation is analogous to the Pierse instability

  4. Numerical simulation of the ion beam generated in the diode with anode plasma column

    International Nuclear Information System (INIS)

    Vrba, P.; Sunka, P.

    1991-02-01

    The ion beam generation in a high current diode with anode plasma slab was studied. The ions were extracted from the anode plasma by the strong electric field of a deep potential well (virtual cathode), arising after the propagation of relativistic electrons through the anode plasma slab. The movement of this potential well with the front part of the ion beam leads to collective ion acceleration up to the 10 MeV energy range. (author). 7 figs., 5 refs

  5. Application of argon atmospheric cold plasma for indium tin oxide (ITO) based diodes

    Science.gov (United States)

    Akbari Nia, S.; Jalili, Y. Seyed; Salar Elahi, A.

    2017-09-01

    Transparent Conductive Oxide (TCO) layers due to transparency, high conductivity and hole injection capability have attracted a lot of attention. One of these layers is Indium Tin Oxide (ITO). ITO due to low resistance, transparency in the visible spectrum and its proper work function is widely used in the manufacture of organic light emitting diodes and solar cells. One way for improving the ITO surface is plasma treatment. In this paper, changes in surface morphology, by applying argon atmospheric pressure cold plasma, was studied through Atomic Force Microscopic (AFM) image analysis and Fourier Transform Infrared Spectroscopy (FTIR) analysis. FTIR analysis showed functional groups were not added or removed, but chemical bond angle and bonds strength on the surface were changed and also AFM images showed that surface roughness was increased. These factors lead to the production of diodes with enhanced Ohmic contact and injection mechanism which are more appropriate in industrial applications.

  6. Characterization of plasma etching damage on p-type GaN using Schottky diodes

    International Nuclear Information System (INIS)

    Kato, M.; Mikamo, K.; Ichimura, M.; Kanechika, M.; Ishiguro, O.; Kachi, T.

    2008-01-01

    The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was observed. On the other hand, by capacitance DLTS measurements for n-type GaN, we observed an increase in concentration of a donor-type defect with an activation energy of 0.25 eV after the ICP etching. The origin of this defect would be due to nitrogen vacancies. We also observed this defect by photocapacitance measurements for ICP-etched p-type GaN. For both n- and p-type GaN, we found that the low bias power ICP etching is effective to reduce the concentration of this defect introduced by the high bias power ICP etching

  7. Interacting Eigenmodes of a plasma diode with a density gradient

    International Nuclear Information System (INIS)

    Loefgren, T.; Gunell, H.

    1997-08-01

    The formation of narrow high frequency electric field spikes in plasma density gradients is investigated using one-dimensional particle in cell simulations. It is found that the shape of the plasma density gradient is very important for the spike formation. The spike appears also in simulations with immobile ions showing that a coupling to the ion motion, as for example in wave interactions, is not necessary for the formation of HF spikes. However, the HF spike influences the ion motion, and ion waves are seen in the simulations. It has been found, in experiments and simulations, that the electron velocity distribution function deviates from the Maxwellian distribution. Dispersion relations are calculated using realistic distribution functions. The spike can be seen as a coupled system of two Eigenmodes of a plasma diode fed by the beam-plasma interaction. Based on a simplified fluid description of such Eigenmodes, explanations for the localization of the spike, spatially and in frequency, are given. The density amplitude is comparable with the DC density level close to the cathode. Space charge limits of waves in this region seem to determine the amplitude of the spike through the Poisson's equation

  8. Application of mid-infrared tuneable diode laser absorption spectroscopy to plasma diagnostics: a review

    International Nuclear Information System (INIS)

    Roepcke, J; Lombardi, G; Rousseau, A; Davies, P B

    2006-01-01

    Within the last decade mid-infrared absorption spectroscopy over a region from 3 to 17μm and based on tuneable lead salt diode lasers, often called tuneable diode laser absorption spectroscopy or TDLAS, has progressed considerably as a powerful diagnostic technique for in situ studies of the fundamental physics and chemistry in molecular plasmas. The increasing interest in processing plasmas containing hydrocarbons, fluorocarbons, organo-silicon and boron compounds has led to further applications of TDLAS because most of these compounds and their decomposition products are infrared active. TDLAS provides a means of determining the absolute concentrations of the ground states of stable and transient molecular species, which is of particular importance for the investigation of reaction kinetic phenomena. Information about gas temperature and population densities can also be derived from TDLAS measurements. A variety of free radicals and molecular ions have been detected by TDLAS. Since plasmas with molecular feed gases are used in many applications such as thin film deposition, semiconductor processing, surface activation and cleaning, and materials and waste treatment, this has stimulated the adaptation of infrared spectroscopic techniques to industrial requirements. The recent development of quantum cascade lasers (QCLs) offers an attractive new option for the monitoring and control of industrial plasma processes. The aim of the present paper is threefold: (i) to review recent achievements in our understanding of molecular phenomena in plasmas (ii) to report on selected studies of the spectroscopic properties and kinetic behaviour of radicals and (iii) to describe the current status of advanced instrumentation for TDLAS in the mid-infrared

  9. Measurement of central nickel density in Doublet III plasmas with a soft x-ray diode array

    International Nuclear Information System (INIS)

    Groebner, R.J.; Jahns, G.L.; Ejima, S.; Hsieh, C.L.

    1985-01-01

    An array of soft x-ray diodes has been used to obtain central nickel densities for discharges in the Doublet III tokamak, during operation with an inconel primary limiter, in which nickel L-line radiation dominated the diode signals. The nature of the diode signals is determined primarily by comparison with soft x-ray spectra. The contribution of the continuum portion of the spectra to the central diode signal can be calculated and compared to the observed signal. When the diode signal is dominated by nickel L-line emission, the observed signal is considerably larger than the calculated continuum contribution. Chordal data from the array of diodes are inverted to provide the spatial profile of soft x-ray emission. Because the diodes are absolute detectors of radiation, the soft x-ray emission profile is used to obtain the absolute nickel concentration and density profile in the center of the plasma. A computer code, including over 100 nickel L-line transitions, has been developed to obtain the nickel density. The nickel L-line cooling rate, calculated with the code, is presented. The nickel density obtained by this technique agrees well with that obtained from the K/sub α/ line intensity measured with a soft x-ray spectrometer and that obtained from a bolometric measurement of central radiated power coupled with a coronal equilibrium model of the radiation

  10. Solution processed organic light-emitting diodes using the plasma cross-linking technology

    Energy Technology Data Exchange (ETDEWEB)

    He, Kongduo [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Liu, Yang [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China); Gong, Junyi; Zeng, Pan; Kong, Xun; Yang, Xilu; Yang, Cheng; Yu, Yan [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Liang, Rongqing [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China); Ou, Qiongrong, E-mail: qrou@fudan.edu.cn [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China)

    2016-09-30

    Highlights: • Mixed acetylene and Ar plasma treatment makes the organic film surface cross-linked. • The plasma treatment for 30 s does not affect the performance of OLEDs. • Cross-linking surface can resist rinsing and corrosion of organic solvent. • The surface morphology is nearly unchanged after plasma treatment. • The plasma cross-linking method can realize solution processed multilayer OLEDs. - Abstract: Solution processed multilayer organic light-emitting diodes (OLEDs) present challenges, especially regarding dissolution of the first layer during deposition of a second layer. In this work, we first demonstrated a plasma cross-linking technology to produce a solution processed OLED. The surfaces of organic films can be cross-linked after mixed acetylene and Ar plasma treatment for several tens of seconds and resist corrosion of organic solvent. The film thickness and surface morphology of emissive layers (EMLs) with plasma treatment and subsequently spin-rinsed with chlorobenzene are nearly unchanged. The solution processed triple-layer OLED is successfully fabricated and the current efficiency increases 50% than that of the double-layer OLED. Fluorescent characteristics of EMLs are also observed to investigate factors influencing the efficiency of the triple-layer OLED. Plasma cross-linking technology may open up a new pathway towards fabrication of all-solution processed multilayer OLEDs and other soft electronic devices.

  11. VUV and ultrasoft X-ray diode detectors for tokamak plasmas

    International Nuclear Information System (INIS)

    Lee, P.; Snider, R.T.; Gernhardt, J.; Armontrout, C.J.

    1987-11-01

    Ultrasoft X-ray diode (USXRD) arrays have been used on D-IIID and ASDEX to study plasma edge radiation, in the photon energy range from 10 eV to 10 keV. The detectors are extremely useful and versatile due to their simplicity and compactness. Furthermore, absolute quantum efficiencies (QE) of many photocathodes such as vitreous C, Al, Cu CuI, CsI and Au have been measured in recent years. With filter technique, broadband resolution, E/ΔE ≅ 1, is possible. QE comparison of USXRD with semiconductor XRD is also presented to better understand the regions of applicability for each detector. (orig.)

  12. A transient model of a cesium-barium diode

    International Nuclear Information System (INIS)

    Luke, J.R.; El-Genk, M.S.

    1995-01-01

    In this work a transient model of a Cs-Ba diode is developed, and a series of experiments is performed using a diode equipped with Langmuir probes. The Langmuir probe data show that the electron energy distribution is non-Maxwellian at low discharge currents, indicating the presence of an electron beam from the emitter. Experimental results also showed that the plasma properties are non-homogeneous across the 1 mm diode gap; the electron temperature and plasma potential were higher near the emitter and the plasma density was higher near the collector. Experimental evidence is presented to show that the discharge contracts to a filament below the maximum thermal emission current

  13. Cyan laser diode grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Turski, H.; Muziol, G.; Wolny, P.; Cywiński, G.; Grzanka, S.; Sawicka, M.; Perlin, P.; Skierbiszewski, C.

    2014-01-01

    We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (Φ N ) during quantum wells (QWs) growth. We found that high Φ N improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold current density are discussed

  14. Production of intense negative ion beams in magnetically insulated diodes

    International Nuclear Information System (INIS)

    Lindenbaum, H.

    1988-01-01

    Production of intense negative ion beams in magnetically insulated diodes was studied in order to develop an understanding of this process by measuring the ion-beam parameters as a function of diode and cathode plasma conditions in different magnetically insulated diodes. A coral diode, a racetrack diode, and an annular diode were used. The UCI APEX pulse line, with a nominal output of 1MV, 140kA, was used under matched conditions with a pulse length of 50 nsec. Negative-ion intensity and divergence were measured with Faraday cups and CR-39 track detectors. Cathode plasma was produced by passive dielectric cathodes and later, by an independent plasma gun. Negative-ion currents had an intensity of a few A/cm 2 with a divergence ranging between a few tenths milliradians for an active TiH 2 plasma gun and 300 milliradians for a passive polyethelene cathode. Negative ions were usually emitted from a few hot spots on the cathode surface. These hot spots are believed to cause transverse electrical fields in the diode gap responsible for the beam divergence. Mass spectrometry measurements showed that the ion beam consists of mainly H - ions when using a polyethelene or a TiH 2 cathodes, and mainly of negative carbon ions when using a carbon cathode

  15. Stability of high current diode under 100-nanosecond-pulse voltage

    International Nuclear Information System (INIS)

    Lai Dingguo; Qiu Aici; Zhang Yongmin; Huang Jianjun; Ren Shuqing; Yang Li

    2012-01-01

    Stability of high current diode under pulse voltage with 80 ns and 34 ns rise time was studied on the flash Ⅱ accelerator. Influence of rise time of diode voltage on startup time and cathode emission uniformity and repeatability of diode impedance was analyzed by comparing the experimental results with numerically simulated results, and the influence mechanism was discussed. The startup time of diode increases with the increasing of rise time of voltage, and the repeatability of diode impedance decreases. Discal plane cathode is prone to emit rays intensely in the center area, the time that plasma covers the surface of the cathode increases and the shielding effect has more impact on cathode emission according to the increase of rise time. Local intense emission on the cathode increases expansion speed of plasma and reduces the effective emission area. The stability of characteristic impedance of diode under a pulse voltage with slow rise time is decreased by the combined action of expansion speed of plasma and the effective emission area. (authors)

  16. Diagnosis of high-intensity pulsed heavy ion beam generated by a novel magnetically insulated diode with gas puff plasma gun.

    Science.gov (United States)

    Ito, H; Miyake, H; Masugata, K

    2008-10-01

    Intense pulsed heavy ion beam is expected to be applied to materials processing including surface modification and ion implantation. For those applications, it is very important to generate high-purity ion beams with various ion species. For this purpose, we have developed a new type of a magnetically insulated ion diode with an active ion source of a gas puff plasma gun. When the ion diode was operated at a diode voltage of about 190 kV, a diode current of about 15 kA, and a pulse duration of about 100 ns, the ion beam with an ion current density of 54 A/cm(2) was obtained at 50 mm downstream from the anode. By evaluating the ion species and the energy spectrum of the ion beam via a Thomson parabola spectrometer, it was confirmed that the ion beam consists of nitrogen ions (N(+) and N(2+)) of energy of 100-400 keV and the proton impurities of energy of 90-200 keV. The purity of the beam was evaluated to be 94%. The high-purity pulsed nitrogen ion beam was successfully obtained by the developed ion diode system.

  17. Model for Generation of Neutrons in a Compact Diode with Laser-Plasma Anode and Suppression of Electron Conduction Using a Permanent Cylindrical Magnet

    Science.gov (United States)

    Shikanov, A. E.; Vovchenko, E. D.; Kozlovskii, K. I.; Rashchikov, V. I.; Shatokhin, V. L.

    2018-04-01

    A model for acceleration of deuterons and generation of neutrons in a compact laser-plasma diode with electron isolation using magnetic field generated by a hollow cylindrical permanent magnet is presented. Experimental and computer-simulated neutron yields are compared for the diode structure under study. An accelerating neutron tube with a relatively high neutron generation efficiency can be constructed using suppression of electron conduction with the aid of a magnet placed in the vacuum volume.

  18. Extraction of high-intensity ion beams from a laser plasma by a pulsed spherical diode

    Directory of Open Access Journals (Sweden)

    Yoshiyuki Oguri

    2005-06-01

    Full Text Available High-current Cu^{+} ion beams were extracted from a laser-produced plasma using a pulsed high-voltage multiaperture diode driven by an induction cavity. The amplitude and the duration of the extraction voltage were 130 kV and 450 ns, respectively. During the extraction, explosive beam divergence due to the strong space-charge force was suppressed by the focusing action of the gap between concentric hemispheres. Modulation of the extracted beam flux due to the plasma prefill in the gap has been eliminated by using a biased control grid put on the anode holes. By means of this extraction scheme we obtained a rectangular beam pulse with a rise time as short as ≈100  ns. The beam current behind the cathode was limited to ≈0.1   A, owing to space-charge effects, as well as to poor geometrical transmission through the cathode sphere. From the measurement of the extracted beam current density distribution along the beam axis and the beam profile measurement, we found a beam waist slightly downstream of the spherical center of the diode structure. The measured beam behavior was consistent with numerical results obtained via a 3D particle code. No serious degradation of the beam emittance was observed for the grid-controlled extraction scheme.

  19. Comparing laser induced plasmas formed in diode and excimer pumped alkali lasers.

    Science.gov (United States)

    Markosyan, Aram H

    2018-01-08

    Lasing on the D 1 transition (6 2 P 1/2 → 6 2 S 1/2 ) of cesium can be reached in both diode and excimer pumped alkali lasers. The first uses D 2 transition (6 2 S 1/2 → 6 2 P 3/2 ) for pumping, whereas the second is pumped by photoexcitation of ground state Cs-Ar collisional pairs and subsequent dissociation of diatomic, electronically-excited CsAr molecules (excimers). Despite lasing on the same D 1 transition, differences in pumping schemes enables chemical pathways and characteristic timescales unique for each system. We investigate unavoidable plasma formation during operation of both systems side by side in Ar/C 2 H 6 /Cs.

  20. Equilibrium double layers in extended Pierce diodes

    International Nuclear Information System (INIS)

    Ciubotariu-Jassy, C.I.

    1992-01-01

    The extended Pierce diode is similar to the standard (or classical) Pierce diode, but has passive circuit elements in place of the short circuit between the electrodes. This device is important as an approximation to real bounded plasma systems. It consists of two parallel plane electrodes (an emitter located at x=0 and a collector located at x=l) and a collisionless cold electron beam travelling between them. The electrons are neutralized by a background of comoving massive ions. This situation is analysed in this paper and new equilibrium double layer (DL) plasma structures are obtained. (author) 6 refs., 3 figs

  1. Ampfion-hybrid diode on the Cornell LION accelerator

    International Nuclear Information System (INIS)

    Rondeau, G.D.; Greenly, J.B.; Hammer, D.A.

    1984-01-01

    An ampfion hybrid diode, previously run on the HYDRAMITE accelerator at Sandia National Laboratories has recently been installed on the Cornell LION accelerator (1 TW, 1.8 MV, 40 ns pulse). The ampfion hybrid diode is magnetically insulated by means of a field coil in series with the cathode structure of the diode. An epoxy dielectric flashboard on the anode provides an anode plasma to supply the extracted ions. The diode has a geometric focal length of 20 cm. The experiment is equipped with plasma erosion opening switches on the anode stock to eliminate prepulse and improve the generator voltage risetime. Diagnostics include magnetic pickup loops to measure currents in the diode structure and non-neutral beam currents, biased charge collectors, and damage targets. An alpha particle pin hole camera utilizing the p,α reaction of fast (>500 kV) protons on boron or lithium is being developed to measure focus quality and proton current. Plastic track detector will be used to image the alpha particles coming from a boron or lithium target. A second pin hole camera uses a plastic scintillator and light detector to give time resolved focused ion intensity

  2. Experiments on high-power ion beam generation in self-insulated diodes

    International Nuclear Information System (INIS)

    Bystritskii, V.M.; Glyshko, Yu.A.; Sinerbrjukhov, A.A.; Kharlov, A.V.

    1991-01-01

    Experimental results are given on high-power ion beams (HPIB) generation in a vacuum spherical focusing diode with self-magnetic insulation, obtained from the nanosecond accelerator PARUS with 0.2-TW power and 60-ns pulse duration for a matched load. When the passive plasma source of the ions was used, the efficiency of the HPIB generation was measured to be as high as 20% for 700-kV diode voltage and 10-kA/cm 2 beam density in the focal plane. The application of a coaxial plasma opening switch (POS) prior to the diode resulted in a factor-of-1.8 increase in the diode power in comparison with a match operation in the absence of a POS. (author)

  3. Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure

    Directory of Open Access Journals (Sweden)

    Chien-Yu Li

    2018-01-01

    Full Text Available In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V, a low reverse leakage current density (≤72 μA/mm2@100 V, and a Schottky barrier height of 1.074 eV.

  4. Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure

    Science.gov (United States)

    Li, Chien-Yu; Cheng, Min-Yu; Houng, Mau-Phon; Yang, Cheng-Fu; Liu, Jing

    2018-01-01

    In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm2@100 V), and a Schottky barrier height of 1.074 eV. PMID:29316726

  5. Electron sheath collapse in an applied-B ion diode

    International Nuclear Information System (INIS)

    Grechikha, A.V.

    1996-01-01

    The effect of the electron sheath collapse in an applied-B ion diode due to the presence of the resistive anode plasma layer was found. This effect is more damaging at higher diode voltages and may be responsible for the parasitic load effect observed in the experiments. (author). 4 figs., 2 refs

  6. Electron sheath collapse in an applied-B ion diode

    Energy Technology Data Exchange (ETDEWEB)

    Grechikha, A V [Forschungszentrum Karlsruhe (Germany). Institut fuer Neutronenphysik und Reaktortechnik

    1997-12-31

    The effect of the electron sheath collapse in an applied-B ion diode due to the presence of the resistive anode plasma layer was found. This effect is more damaging at higher diode voltages and may be responsible for the parasitic load effect observed in the experiments. (author). 4 figs., 2 refs.

  7. Analytic model of Applied-B ion diode impedance behavior

    International Nuclear Information System (INIS)

    Miller, P.A.; Mendel, C.W. Jr.

    1987-01-01

    An empirical analysis of impedance data from Applied-B ion diodes used in seven inertial confinement fusion research experiments was published recently. The diodes all operated with impedance values well below the Child's-law value. The analysis uncovered an unusual unifying relationship among data from the different experiments. The analysis suggested that closure of the anode-cathode gap by electrode plasma was not a dominant factor in the experiments, but was not able to elaborate the underlying physics. Here we present a new analytic model of Applied-B ion diodes coupled to accelerators. A critical feature of the diode model is based on magnetic insulation theory. The model successfully describes impedance behavior of these diodes and supports stimulating new viewpoints of the physics of Applied-B ion diode operation

  8. Investigation of magnetically self-insulated effect in an ion diode with an explosive emission potential electrode

    International Nuclear Information System (INIS)

    Pushkarev, A. I.; Isakova, J. I.; Saltimakov, M. S.; Sazonov, R. V.

    2010-01-01

    The results of an experimental investigation of a magnetically self-insulated effect in an ion diode in bipolar-pulse mode are presented. The investigations were accomplished at the TEMP-4M accelerator by formation of a first negative pulse (100 ns, 150-200 kV) and a second positive pulse (80 ns, 200-300 kV) [G. E. Remnev et al., Surf. Coat. Technol. 114, 206 (1999)]. Plasma behavior in the anode-cathode gap was analyzed according to the current-voltage characteristics of the diode with a time resolution of 0.5 ns. It is shown that during the discrete emissive surface mode, the magnetic field influence on plasma dynamics is slight. During the space charge limitation mode, the current-voltage characteristics of the diode are well-described by the Child-Langmuir ratio. The drift speed of electrons in the diode exceeds 80 mm/ns and the effect of magnetic insulation is insignificant. It was discovered, when plasma formation at the potential electrode is complete and up until the second positive pulse that the plasma speed is constant and equals to 1.3±0.2 cm/μs. After the voltage polarity at the potential electrode changes (second pulse), plasma breakup at the anode-cathode gap takes place. The impedance of the diode begins to increase and, when the total current is more than 30 kA, the diode impedance exceeds the calculated values by more than three times. The energy efficiency and limiting characteristics of the magnetically self-insulated diode are determined.

  9. Magnetically insulated H- diodes

    International Nuclear Information System (INIS)

    Fisher, A.; Bystritskii, V.; Garate, E.; Prohaska, R.; Rostoker, N.

    1993-01-01

    At the Univ. of California, Irvine, the authors have been studying the production of intense H - beams using pulse power techniques for the past 7 years. Previously, current densities of H - ions for various diode designs at UCI have been a few A/cm 2 . Recently, they have developed diodes similar to the coaxial design of the Lebedev Physical Institute, Moscow, USSR, where current densities of up to 200 A/cm 2 were reported using nuclear activation of a carbon target. In experiments at UCI employing the coaxial diode, current densities of up to 35 A/cm 2 from a passive polyethylene cathode loaded with TiH 2 have been measured using a pinhole camera and CR-39 track recording plastic. The authors have also been working on a self-insulating, annular diode which can generate a directed beam of H - ions. In the annular diode experiments a plasma opening switch was used to provide a prepulse and a current path which self-insulated the diode. These experiments were done on the machine APEX, a 1 MV, 50 ns, 7 Ω pulseline with a unipolar negative prepulse of ∼ 100 kV and 400 ns duration. Currently, the authors are modifying the pulseline to include an external LC circuit which can generate a bipolar, 150 kV, 1 μs duration prepulse (similar prepulse characteristic as in the Lebedev Institute experiments cited above)

  10. Inductively coupled plasma-induced defects in n-type GaN studied from Schottky diode characteristics

    International Nuclear Information System (INIS)

    Nakamura, W.; Tokuda, Y.; Ueda, H.; Kachi, T.

    2006-01-01

    Inductively coupled plasma-(ICP-)induced defects in n-type GaN have been studied from current-voltage (I-V) characteristics and deep-level transient spectroscopy (DLTS) for Schottky diodes fabricated on etched surfaces. The samples after ICP etching show the ohmic I-V characteristics. Schottky characteristics are obtained after annealing at 600 and 800 deg. C in N 2 , but are not restored to that of the control samples. DLTS shows that the effect of ICP etching is small on the region beyond 80 nm from the surface. These results suggest that there remain ICP-induced damage in the near-surface region after thermal annealing

  11. High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

    CERN Document Server

    Wuu, D S; Huang, S H; Chung, C R

    2002-01-01

    Dry etch of wafer-bonded AlGaInP/mirror/Si light-emitting diodes (LEDs) with planar electrodes was performed by high-density plasma using an inductively coupled plasma (ICP) etcher. The etching characteristics were investigated by varying process parameters such as Cl sub 2 /N sub 2 gas combination, chamber pressure, ICP power and substrate-bias power. The corresponding plasma properties (ion flux and dc bias), in situ measured by a Langmuir probe, show a strong relationship to the etch results. With a moderate etch rate of 1.3 mu m/min, a near vertical and smooth sidewall profile can be achieved under a Cl sub 2 /(Cl sub 2 +N sub 2) gas mixture of 0.5, ICP power of 800 W, substrate-bias power of 100 W, and chamber pressure of 0.67 Pa. Quantitative analysis of the plasma-induced damage was attempted to provide a means to study the mechanism of leakage current and brightness with various dc bias voltages (-110 to -328 V) and plasma duration (3-5 min) on the wafer-bonded LEDs. It is found that the reverse leaka...

  12. Power ion beam production in a magnetic-insulated diode placed in a circuit with an inductive storage with a plasmoerosion circuit breaker

    International Nuclear Information System (INIS)

    Anan'in, P.S.; Karpov, V.B.; Krasik, Ya.E.; Paul', E.A.

    1991-01-01

    Consideration is given to results of experimental studies of modes of operation of plasma current breaker and magnetic insulated diode, placed parallel in a circuit with inductive storage and microsecond generator, as well as parameters of high-power ion beam, generated in gas-filled diode. Magnetic field of mirror configuration, which enabled to locate the gas-filled diode dose to breaking region was used for decrease of electrodynamic plasma transfer. It is shown that time delay (of the order of ten and more) of power maximum in gas-filled diode with respect to power maximum in plasma breaker is observed when using passive plasma source on anode

  13. 100 years of the physics of diodes

    Science.gov (United States)

    Zhang, Peng; Valfells, Ágúst; Ang, L. K.; Luginsland, J. W.; Lau, Y. Y.

    2017-03-01

    The Child-Langmuir Law (CL), discovered a century ago, gives the maximum current that can be transported across a planar diode in the steady state. As a quintessential example of the impact of space charge shielding near a charged surface, it is central to the studies of high current diodes, such as high power microwave sources, vacuum microelectronics, electron and ion sources, and high current drivers used in high energy density physics experiments. CL remains a touchstone of fundamental sheath physics, including contemporary studies of nanoscale quantum diodes and nano gap based plasmonic devices. Its solid state analog is the Mott-Gurney law, governing the maximum charge injection in solids, such as organic materials and other dielectrics, which is important to energy devices, such as solar cells and light emitting diodes. This paper reviews the important advances in the physics of diodes since the discovery of CL, including virtual cathode formation and extension of CL to multiple dimensions, to the quantum regime, and to ultrafast processes. We review the influence of magnetic fields, multiple species in bipolar flow, electromagnetic and time dependent effects in both short pulse and high frequency THz limits, and single electron regimes. Transitions from various emission mechanisms (thermionic-, field-, and photoemission) to the space charge limited state (CL) will be addressed, especially highlighting the important simulation and experimental developments in selected contemporary areas of study. We stress the fundamental physical links between the physics of beams to limiting currents in other areas, such as low temperature plasmas, laser plasmas, and space propulsion.

  14. Development and testing of immersed-Bz diodes with cryogenic anodes

    International Nuclear Information System (INIS)

    Bruner, Nichelle Lee; Cordova, Steve Ray; Oliver, Bryan Velten; Portillo, Salvador; Cooper, Graham; Puetz, Elizabeth A.; Johnston, Mark D.; Hahn, Kelly Denise; McLean, John; Molina, Isidro; Droemer, Darryl W.; Welch, Dale R.; Rovang, Dean Curtis; Van De Valde, David M.; Gregerson, Darryl; Maenchen, John Eric; O'Malley, John

    2005-01-01

    Sandia National Laboratories is investigating and developing high-dose, high-brightness flash radiographic sources. The immersed-B z diode employs large-bore, high-field solenoid magnets to help guide and confine an intense electron beam from a needle-like cathode 'immersed' in the axial field of the magnet. The electron beam is focused onto a high-atomic-number target/anode to generate an intense source of bremsstrahlung X-rays. Historically, these diodes have been unable to achieve high dose (> 500 rad (at) m) from a small spot (< 3 mm diameter). It is believed that this limitation is due in part to undesirable effects associated with the interaction of the electron beam with plasmas formed at either the anode or the cathode. Previous research concentrated on characterizing the behavior of diodes, which used untreated, room temperature (RT) anodes. Research is now focused on improving the diode performance by modifying the diode behavior by using cryogenic anodes that are coated in-situ with frozen gases. The objective of these cryogenically treated anodes is to control and limit the ion species of the anode plasma formed and hence the species of the counter-streaming ions that can interact with the electron beam. Recent progress in the development, testing and fielding of the cryogenically cooled immersed diodes at Sandia is described.

  15. Proto-I switching and diode studies

    International Nuclear Information System (INIS)

    Prestwich, K.R.; Miller, P.A.; McDaniel, D.H.; Poukey, J.W.; Widner, M.M.; Goldstein, S.A.

    1975-01-01

    Proto-I is a 3 MV, 800 kA, 24 ns electron beam accelerator that is under development at Sandia Laboratories. It represents an initial effort to develop a scalable technology that is applicable to accelerators for electron beam driven, inertial confinement fusion studies. Energy is supplied to each of the two diodes from six oil-dielectric Blumlein transmission lines (PFL) operating in parallel. A Marx generator charges three intermediate storage, water-dielectric capacitors which subsequently transfer the stored energy to the PFL. The discharge of the PFL is initiated by the simultaneous closure of 12 triggered oil-dielectric rail switches. Data will be presented on the operation of these multichannel switches. The two diodes have a common anode. Cathode diameters can be varied from 10 to 60 cm. Results of initial diode experiments and comparisons with theory are discussed. Plasma filled diode experiments are also reported, indicating pinch collapse velocities in excess of 10 9 cm/s

  16. Operation of an extraction, applied-B diode using an externally-driven, metallic foil anode plasma source

    International Nuclear Information System (INIS)

    Hinshelwood, D.D.; Fisher, R.C.; Greenly, J.B.; Neri, J.M.; Oliver, B.V.; Ottinger, P.F.; Rose, D.V.; Stephanakis, S.J.; Young, F.C.

    1995-01-01

    The authors are developing an extraction, applied-B ion diode, on the Gamble II generator at NRL, for ion-beam-transport research in support of the SNL light-ion ICF program. An ion beam with a voltage above 1 MV and a proton current of 150--200 kA is required for transport experiments. At present they are using hardware which allows a maximum anode area of ∼60 cm 2 . These parameters result in enhancement factors 2--3 times greater than those in similar experiments at Cornell, SNL, and KfK. In addition, the early, high-impedance phase of the diode must be minimized to prevent insulator flashover. Transport experiments with beam focusing also preclude ion beam angular momentum. A version of the EMFAP source, developed at Cornell and improved at KfK, is used to provide prompt turn-on of the ion current. To date the authors have obtained ion beams with rapid turn-on, high currents and current densities, high ion efficiencies (80%), relatively stable impedance behavior, and negligible angular momentum. Unfortunately, these have not all been obtained on the same shot. Electron loss current flowing through the anode foil is seen to play an important role in evolution of the anode plasma. Under the conditions of this experiment, the diode self-magnetic field is also important. Work at present centers on viewing the existing data in light of the refined field measurements, coupled with PIC modeling, to identify an operating regime that will provide the required electrical behavior without beam angular momentum

  17. Investigation of Power Flow from a Plasma Opening Switch to an Electron Beam Diode

    National Research Council Canada - National Science Library

    Black, D

    1999-01-01

    ...) and an electron-beam (e-beam) diode load. The parameters that were varied independently in this set of experiments were the conduction time, the e-beam diode anode-cathode (A-K) gap (diode impedance...

  18. Development of a high and low impedance diode testing facility at AWE Aldermaston

    International Nuclear Information System (INIS)

    Sinclair, M.; Aedy, Ch.; Cooper, G.

    2005-01-01

    To meet the future resolution targets for radiography of hydrodynamic experiments is creating a dedicated Diode Research Facility. To perform low impedance diode research, the X-ray simulator Eros has been acquired. To drive the high impedance diodes the EMU machine will be co-located with Eros. The co-located of machines will facilitate the sharing of plasma and X-ray diagnostics [ru

  19. Study on the ion diode with a laser-plasma anode

    International Nuclear Information System (INIS)

    Bykovskij, Yu.A.; Kozyrev, Yu.P.; Kozlovskij, K.I.; Tsybin, A.S.; Shikanov, A.E.

    1981-01-01

    Results of investigation into a pulsed ion diode with magnetic electron isolation (DMI) using a laser ion source are stated. The investigations were carried on by measurement of current characteristics and neutron diode yield for different parameters of laser radiation, isolating magnetic field and DMI geometry. approximately equal to 150 A current of accelerated ions has been generated at a density of approximately equal to 10 A/cm 2 and approximately 1 μs pulse duration when using isolating magnetic field having inductance of up to 10 kGs and laser radiation energy of up to 1 J (power density > or approximately 10 9 W/cm 2 ). Current diode efficiency constituted approximately 50 %. Neutron yield amounted to approximately 10 7 neutr/pulse (D(d, n)He 3 reaction) at an optimal value of inductance of isolating magnetic field. Frequency regime of DMI operation with pulse repetition of up to 10 Hz has been realized [ru

  20. Dependence of plasma treatment of ITO electrode films on electrical and optical properties of polymer light-emitting diodes

    International Nuclear Information System (INIS)

    Kim, Seung Ho; Baek, Seung Jun; Chang, Ho Jung; Chang, Young Chul

    2012-01-01

    Polymer light-emitting diodes (PLEDs) having indium tin oxide (ITO)/PEDOT:PSS [poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate]/PVK [poly-vinylcarbazole]:PFO-poss [poly(9,9-dioctylfluorene) end capped by polyhedral oligomeric silsesquioxane]/TPBI [2,2',2''-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)]/LiF/Al structures were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The effects of the plasma treatment on the ITO films to the optical and electrical properties of the PLEDs were examined. The sheet resistance of the ITO films decreased with an increasing radio frequency (RF) plasma intensity from 20 to 200 W under a 20 mTorr Ar + O 2 gas (50:50 vol.%) pressure. The work function of the ITO films without plasma treatment was 4.97 eV, and increased to about 5.16-5.23 eV after the plasma treatment of the films. The surface roughness improved with increasing plasma intensities. The luminance and current efficiency of the PLEDs were improved when the devices were prepared on the plasma-treated ITO/glass substrates. The maximum current density and luminance for the PLEDs was obtained at a 150-W RF plasma intensity; they were 310 mA cm -2 and 2535 cd m -2 at 9 V, respectively. The Commission Internationale d'Eclairage (CIE) color coordinates were found to be x, y = 0.17, 0.06-0.07, showing a good blue color. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Determination of gas temperature and thermometric species in inductively coupled plasmas by emission and diode laser absorption

    International Nuclear Information System (INIS)

    Bol'shakov, Alexander A; Cruden, Brett A; Sharma, Surendra P

    2004-01-01

    A vertical cavity surface-emitting laser diode (VCSEL) was used as a spectrally tunable emission source for measurements of the radial-integrated gas temperature inside an inductively coupled plasma reactor. The data were obtained by profiling the Doppler-broadened absorption of metastable Ar atoms at 763.51 nm in argon and argon/nitrogen plasmas (3%, 45%, and 90% N 2 in Ar) at pressures of 0.5-70 Pa and inductive powers of 100 and 300 W. The results were compared to the rotational temperature derived from the N 2 emission at the (0,0) vibrational transition of the C 3 Π u -B 3 Π g system. The differences in integrated rotational and Doppler temperatures were attributed to non-uniform spatial distributions of both temperature and thermometric species (Ar * and N 2 *) that varied depending on the conditions. A two-dimensional, three-temperature fluid plasma simulation was employed to explain these differences. This work should facilitate further development of a miniature sensor for non-intrusive acquisition of data (temperature and densities of multiple plasma species) during micro- and nano-fabrication plasma processing, thus enabling diagnostic-assisted continuous optimization and advanced control over the processes. Such sensors would also enable us to track the origins and pathways of damaging contaminants, thereby providing real-time feedback for adjustment of processes. Our work serves as an example of how two line-of-sight integrated temperatures derived from different thermometric species make it possible to characterize the radial non-uniformity of the plasma

  2. Determination of gas temperature and thermometric species in inductively coupled plasmas by emission and diode laser absorption

    Energy Technology Data Exchange (ETDEWEB)

    Bol' shakov, Alexander A; Cruden, Brett A; Sharma, Surendra P [NASA Ames Research Center, Moffett Field, CA 94035 (United States)

    2004-11-01

    A vertical cavity surface-emitting laser diode (VCSEL) was used as a spectrally tunable emission source for measurements of the radial-integrated gas temperature inside an inductively coupled plasma reactor. The data were obtained by profiling the Doppler-broadened absorption of metastable Ar atoms at 763.51 nm in argon and argon/nitrogen plasmas (3%, 45%, and 90% N{sub 2} in Ar) at pressures of 0.5-70 Pa and inductive powers of 100 and 300 W. The results were compared to the rotational temperature derived from the N{sub 2} emission at the (0,0) vibrational transition of the C {sup 3}{pi}{sub u}-B {sup 3}{pi} {sub g} system. The differences in integrated rotational and Doppler temperatures were attributed to non-uniform spatial distributions of both temperature and thermometric species (Ar{sup *} and N{sub 2}*) that varied depending on the conditions. A two-dimensional, three-temperature fluid plasma simulation was employed to explain these differences. This work should facilitate further development of a miniature sensor for non-intrusive acquisition of data (temperature and densities of multiple plasma species) during micro- and nano-fabrication plasma processing, thus enabling diagnostic-assisted continuous optimization and advanced control over the processes. Such sensors would also enable us to track the origins and pathways of damaging contaminants, thereby providing real-time feedback for adjustment of processes. Our work serves as an example of how two line-of-sight integrated temperatures derived from different thermometric species make it possible to characterize the radial non-uniformity of the plasma.

  3. Taming Instabilities in Plasma Discharges

    International Nuclear Information System (INIS)

    Klinger, T.; Krahnstover, N. O.; Mausbach, T.; Piel, A.

    2000-01-01

    Recent experimental work on taming instabilities in plasma discharges is discussed. Instead of suppressing instabilities, it is desired to achieve control over their dynamics, done by perturbing appropriately the current flow in the external circuit of the discharge. Different discrete and continuous feedback as well as open-loop control schemes are applied. Chaotic oscillations in plasma diodes are controlled using the OGY discrete feedback scheme. This is demonstrated both in experiment and computer simulation. Weakly developed ionization wave turbulence is tamed by continuous feedback control. Open-loop control of stochastic fluctuations - stochastic resonance - is demonstrated in a thermionic plasma diode. (author)

  4. Extraction magnetically insulated diode studies on Gamble II

    International Nuclear Information System (INIS)

    Neri, J.M.; Boller, J.R.; Ottinger, P.F.; Stephanakis, S.J.; Greenly, J.

    1993-01-01

    An extraction Magnetically Insulated Diode (MID) with anode and cathode magnetic field coils has been tested on the NRL Gamble II accelerator. The purpose of the experiments is to develop an annular, intense ion beam source for testing ion beam transport physics related to light ion inertial confinement fusion. Initial experiments have been performed with surface flashover ion sources. The experimental challenge has been to obtain a tuning of the 4 magnetic field coils that results in a minimum turn-on time of the ion source and acceptable coupling to the accelerator. Results from several different geometries of magnetic field will be presented. The principal diode diagnostics are the total diode current, net ion current, and corrected diode voltage. Calculations of the magnetic field strength and geometry are performed with the ATHETA code. An active anode ion source is also under development. The initial portion of the accelerator pulse is diverted with a plasma opening switch (POS) and passed through a thin foil that will become the ion source. The foil is swiftly heated by the current pulse and gas is desorbed or diffused from the foil into the anode-cathode gap. The gas is then broken down by the current pulse, forming a dense plasma source on the anode surface. Two different foils are being used. A thin aluminum foil will work with desorbed gases, and provide a beam that is predominately protons. A hydrogen loaded titanium foil, with a paladium overcoating, will use diffused hydrogen, and produce a high purity proton beam. The net result of the POS and active anode plasma source should be much faster ion turn-on time, and better coupling of the ion source to the accelerator. Preliminary results with the active anode sources will be presented

  5. Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV

    Energy Technology Data Exchange (ETDEWEB)

    Etchessahar, Bertrand; Bicrel, Beatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Hebert, David [CEA, DAM, CESTA, F-33114 Le Barp (France); Bernigaud, Virgile; Magnin, Laurent; Nicolas, Remi; Poulet, Frederic; Tailleur, Yaeel [CEA, DAM, VALDUC, F-21120 Is sur Tille (France); Caron, Michel; Cartier, Frederic; Cartier, Stephanie; Hourdin, Laurent; Rosol, Rodolphe; Toury, Martial; Delbos, Christophe; Garrigues, Alain; Soleilhavoup, Isabelle [CEA, DAM, GRAMAT, F-46500 Gramat (France); and others

    2012-09-15

    The negative polarity rod pinch diode (NPRPD) is a potential millimeter spot size radiography source for high voltage generators (4 to 8 MV) [Cooperstein et al., 'Considerations of rod-pinch diode operation in negative polarity for radiography,' in Proceedings of the 14th IEEE Pulsed Power Conference, 2003, pp. 975-978]. The NPRPD consists of a small diameter (few mm) cylindrical anode extending from the front end of the vacuum cell through a thin annular cathode, held by a central conductor. The polarity has been inverted when compared to the original rod pinch diode [Cooperstein et al., 'Theoretical modeling and experimental characterization of a rod-pinch diode,' Phys. Plasmas 8(10), 4618-4636 (2001)] in order to take advantage from the maximal x-ray emission toward the anode holder at such a voltage [Swanekamp et al., 'Evaluation of self-magnetically pinched diodes up to 10 MV as high resolution flash X-ray sources,' IEEE Trans. Plasma Sci. 32(5), 2004-2016 (2004). We have studied this diode at 4.5 MV, driven by the ASTERIX generator [Raboisson et al., 'ASTERIX, a high intensity X-ray generator,' in Proceedings of the 7th IEEE Pulsed Power Conference, 1989, pp. 567-570.]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode has been modified in order to set up flash a radiographic diode [Etchessahar et al., 'Negative polarity rod pinch diode experiments on the ASTERIX generator,' in Conference Records-Abstracts, 37th IEEE International Conference on Plasma Science, 2010]. The experiments and numerical simulations presented here allowed the observation and analysis of various physical phenomena associated with the diode operation. Also, the influence of several experimental parameters, such as cathode and anode diameters, materials and surface states, was examined. In order to

  6. Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV

    International Nuclear Information System (INIS)

    Etchessahar, Bertrand; Bicrel, Béatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Hébert, David; Bernigaud, Virgile; Magnin, Laurent; Nicolas, Rémi; Poulet, Frédéric; Tailleur, Yaël; Caron, Michel; Cartier, Frédéric; Cartier, Stéphanie; Hourdin, Laurent; Rosol, Rodolphe; Toury, Martial; Delbos, Christophe; Garrigues, Alain; Soleilhavoup, Isabelle

    2012-01-01

    The negative polarity rod pinch diode (NPRPD) is a potential millimeter spot size radiography source for high voltage generators (4 to 8 MV) [Cooperstein et al., “Considerations of rod-pinch diode operation in negative polarity for radiography,” in Proceedings of the 14th IEEE Pulsed Power Conference, 2003, pp. 975–978]. The NPRPD consists of a small diameter (few mm) cylindrical anode extending from the front end of the vacuum cell through a thin annular cathode, held by a central conductor. The polarity has been inverted when compared to the original rod pinch diode [Cooperstein et al., “Theoretical modeling and experimental characterization of a rod-pinch diode,” Phys. Plasmas 8(10), 4618–4636 (2001)] in order to take advantage from the maximal x-ray emission toward the anode holder at such a voltage [Swanekamp et al., “Evaluation of self-magnetically pinched diodes up to 10 MV as high resolution flash X-ray sources,” IEEE Trans. Plasma Sci. 32(5), 2004–2016 (2004). We have studied this diode at 4.5 MV, driven by the ASTERIX generator [Raboisson et al., “ASTERIX, a high intensity X-ray generator,” in Proceedings of the 7th IEEE Pulsed Power Conference, 1989, pp. 567–570.]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode has been modified in order to set up flash a radiographic diode [Etchessahar et al., “Negative polarity rod pinch diode experiments on the ASTERIX generator,” in Conference Records–Abstracts, 37th IEEE International Conference on Plasma Science, 2010]. The experiments and numerical simulations presented here allowed the observation and analysis of various physical phenomena associated with the diode operation. Also, the influence of several experimental parameters, such as cathode and anode diameters, materials and surface states, was examined. In order to achieve the most

  7. Modeling and characterization of field-enhanced corona discharge in ozone-generator diode

    Science.gov (United States)

    Patil, Jagadish G.; Vijayan, T.

    2010-02-01

    Electric field enhanced corona plasma discharge in ozone generator diode of axial symmetry has been investigated and characterized in theory. The cathode K of diode is made of a large number of sharpened nozzles arranged on various radial planes on the axial mast and pervaded in oxygen gas inside the anode cup A, produces high fields over MV/m and aids in the formation of a corona plume of dense ozone cloud over the cathode surface. An r-z finite difference scheme has been devised and employed to numerically determine the potential and electric field distributions inside the diode. The analyses of cathode emissions revealed a field emission domain conformed to modified Child-Langmuir diode-current. Passage of higher currents (over μA) in shorter A-K gaps d gave rise to cathode heated plasma extending from the corona to Saha regimes depending on local temperature. Plasma densities of order 102-106 m-3 are predicted in these. For larger d however, currents are smaller and heating negligible and a negative corona favoring ozone formation is attained. High ozone yields about 20 per cent of oxygen input is predicted in this domain. The generator so developed will be applied to various important applications such as, purification of ambient air /drinking water, ozone therapy, and so on.

  8. Modeling and characterization of field-enhanced corona discharge in ozone-generator diode

    Energy Technology Data Exchange (ETDEWEB)

    Patil, Jagadish G; Vijayan, T, E-mail: jagdishlove@gmail.co [Mahatma Education Society' s ' Pillai' s Institute of Information Technology, Engineering, Media Studies and Research' Dr. K M Vasudevan Pillai' s Campus, Sector 16, New Panvel, Navi Mumbai - 410 206 (India)

    2010-02-01

    Electric field enhanced corona plasma discharge in ozone generator diode of axial symmetry has been investigated and characterized in theory. The cathode K of diode is made of a large number of sharpened nozzles arranged on various radial planes on the axial mast and pervaded in oxygen gas inside the anode cup A, produces high fields over MV/m and aids in the formation of a corona plume of dense ozone cloud over the cathode surface. An r-z finite difference scheme has been devised and employed to numerically determine the potential and electric field distributions inside the diode. The analyses of cathode emissions revealed a field emission domain conformed to modified Child-Langmuir diode-current. Passage of higher currents (over {mu}A) in shorter A-K gaps d gave rise to cathode heated plasma extending from the corona to Saha regimes depending on local temperature. Plasma densities of order 10{sup 2}-10{sup 6} m{sup -3} are predicted in these. For larger d however, currents are smaller and heating negligible and a negative corona favoring ozone formation is attained. High ozone yields about 20 per cent of oxygen input is predicted in this domain. The generator so developed will be applied to various important applications such as, purification of ambient air /drinking water, ozone therapy, and so on.

  9. Modeling and characterization of field-enhanced corona discharge in ozone-generator diode

    International Nuclear Information System (INIS)

    Patil, Jagadish G; Vijayan, T

    2010-01-01

    Electric field enhanced corona plasma discharge in ozone generator diode of axial symmetry has been investigated and characterized in theory. The cathode K of diode is made of a large number of sharpened nozzles arranged on various radial planes on the axial mast and pervaded in oxygen gas inside the anode cup A, produces high fields over MV/m and aids in the formation of a corona plume of dense ozone cloud over the cathode surface. An r-z finite difference scheme has been devised and employed to numerically determine the potential and electric field distributions inside the diode. The analyses of cathode emissions revealed a field emission domain conformed to modified Child-Langmuir diode-current. Passage of higher currents (over μA) in shorter A-K gaps d gave rise to cathode heated plasma extending from the corona to Saha regimes depending on local temperature. Plasma densities of order 10 2 -10 6 m -3 are predicted in these. For larger d however, currents are smaller and heating negligible and a negative corona favoring ozone formation is attained. High ozone yields about 20 per cent of oxygen input is predicted in this domain. The generator so developed will be applied to various important applications such as, purification of ambient air /drinking water, ozone therapy, and so on.

  10. Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions

    International Nuclear Information System (INIS)

    SHUL, RANDY J.; ZHANG, LEI; BACA, ALBERT G.; WILLISON, CHRISTI LEE; HAN, JUNG; PEARTON, S.J.; REN, F.

    1999-01-01

    Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl 2 /BCl 3 /Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions (≤ 500 W), pressures ≥2 mTorr, and at ion energies below approximately -275 V

  11. Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Skierbiszewski, C.; Wasilewski, Z.R.; Siekacz, M.; Feduniewicz, A.; Perlin, P.; Wisniewski, P.; Borysiuk, J.; Grzegory, I.; Leszczynski, M.; Suski, T.; Porowski, S.

    2005-01-01

    We report on the InGaN multiquantum laser diodes (LDs) made by rf plasma-assisted molecular beam epitaxy (PAMBE). The laser operation at 408 nm is demonstrated at room temperature with pulsed current injections using 50 ns pulses at 0.25% duty cycle. The threshold current density and voltage for the LDs with cleaved uncoated mirrors are 12 kA/cm 2 (900 mA) and 9 V, respectively. High output power of 0.83 W is obtained during pulse operation at 3.6 A and 9.6 V bias with the slope efficiency of 0.35 W/A. The laser structures are deposited on the high-pressure-grown low dislocation bulk GaN substrates taking full advantage of the adlayer enhanced lateral diffusion channel for adatoms below the dynamic metallic cover. Our devices compare very favorably to the early laser diodes fabricated using the metalorganic vapor phase epitaxy technique, providing evidence that the relatively low growth temperatures used in this process pose no intrinsic limitations on the quality of the blue optoelectronic components that can be fabricated using PAMBE

  12. Experimental study of self magnetic pinch diode as flash radiography source at 4 megavolt

    International Nuclear Information System (INIS)

    Etchessahar, Bertrand; Bicrel, Béatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Maisonny, Rémi; Toury, Martial; Hourdin, Laurent; Cartier, Frédéric; Cartier, Stéphanie; D'Almeida, Thierry; Delbos, Christophe; Garrigues, Alain; Plouhinec, Damien; Ritter, Sandra; Sol, David; Zucchini, Frédéric; Caron, Michel

    2013-01-01

    The Self Magnetic Pinch (SMP) diode is a potential high-brightness X-ray source for high voltage generators (2–10 MV) that has shown good reliability for flash radiography applications [D. D. Hinchelwood et al., “High power self-pinch diode experiments for radiographic applications” IEEE Trans. Plasma Sci. 35(3), 565–572 (2007)]. We have studied this diode at about 4 MV, driven by the ASTERIX generator operated at the CEA/GRAMAT [G. Raboisson et al., “ASTERIX, a high intensity X-ray generator,” in Proceedings of the 7th IEEE Pulsed Power Conference (1989), pp. 567–570]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode is modified in order to set up flash radiographic diodes. A previous set of radiographic experiments was carried out on ASTERIX with a Negative Polarity Rod Pinch (NPRP) diode [B. Etchessahar et al., “Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV,” Phys. Plasmas 19(9), 093104 (2012)]. The SMP diode which is examined in the present study provides an alternative operating point on the same generator and a different radiographic performance: 142 ± 11 rad at 1 m dose (Al) for a 3.46 ± 0.42 mm spot size (1.4× FWHM of the LSF). This performance is obtained in a reproducible and robust nominal configuration. However, several parametric variations were also tested, such as cathode diameter and anode/cathode gap. They showed that an even better performance is accessible after optimization, in particular, a smaller spot size (<3 mm). Numbers of electrical, optical, and X-ray diagnostics have been implemented in order to gain more insight in the diode physics and to optimize it further. For the first time in France, visible and laser imaging of the SMP diode has been realized, from a radial point of view, thus, providing key information on the electrode

  13. GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, H. Y.; Yang, W. C.; Lee, P. Y.; Lin, C. W.; Cheng, Kai-Yuan; Hsieh, K. C.; Cheng, K. Y., E-mail: kycheng@ee.nthu.edu.tw [Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Hsu, C.-H. [Division of Scientific Research, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

    2016-08-22

    GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.

  14. Pulsed Plasma Electron Sources

    Science.gov (United States)

    Krasik, Yakov

    2008-11-01

    Pulsed (˜10-7 s) electron beams with high current density (>10^2 A/cm^2) are generated in diodes with electric field of E > 10^6 V/cm. The source of electrons in these diodes is explosive emission plasma, which limits pulse duration; in the case E Saveliev, J. Appl. Phys. 98, 093308 (2005). Ya. E. Krasik, A. Dunaevsky, and J. Felsteiner, Phys. Plasmas 8, 2466 (2001). D. Yarmolich, V. Vekselman, V. Tz. Gurovich, and Ya. E. Krasik, Phys. Rev. Lett. 100, 075004 (2008). J. Z. Gleizer, Y. Hadas and Ya. E. Krasik, Europhysics Lett. 82, 55001 (2008).

  15. Pulsed diode source of polarized ions

    International Nuclear Information System (INIS)

    Katzenstein, J.; Rostoker, N.

    1983-01-01

    The advantages of polarized nuclei for fusion reactors have recently been described. We propose a pulsed source of polarized nuclei that consists of an ion diode with a polarized anode. With magnetic resonance techniques the nuclear spins of the protons of solid NH 3 can be made about 90 to 95% polarized. This material would be used for the anode. The diode would be pulsed with a voltage of 1-200K-volts for 1-2 μ sec. Flashover of the anode produces a surface plasma from which the polarized protons would be extracted to form a beam. Depolarization could be detected by comparing reaction cross sections and/or distribution of reaction products with similar results for unpolarized beams

  16. Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on p-GaN for InGaN/GaN Light-Emitting Diodes.

    Science.gov (United States)

    Son, Kwang Jeong; Kim, Tae Kyoung; Cha, Yu-Jung; Oh, Seung Kyu; You, Shin-Jae; Ryou, Jae-Hyun; Kwak, Joon Seop

    2018-02-01

    The origin of plasma-induced damage on a p -type wide-bandgap layer during the sputtering of tin-doped indium oxide (ITO) contact layers by using radiofrequency-superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light-emitting diodes (LEDs) with sputtered ITO transparent conductive electrodes (TCE) is systematically studied. Changing the DC power voltage from negative to positive bias reduces the forward voltages and enhances the LOP of the LEDs. The positive DC power drastically decreases the electron flux in the plasma obtained by plasma diagnostics using a cutoff probe and a Langmuir probe, suggesting that the repulsion of plasma electrons from the p -GaN surface can reduce plasma-induced damage to the p -GaN. Furthermore, electron-beam irradiation on p -GaN prior to ITO deposition significantly increases the forward voltages, showing that the plasma electrons play an important role in plasma-induced damage to the p -GaN. The plasma electrons can increase the effective barrier height at the ITO/deep-level defect (DLD) band of p -GaN by compensating DLDs, resulting in the deterioration of the forward voltage and LOP. Finally, the plasma damage-free sputtered-ITO TCE enhances the LOP of the LEDs by 20% with a low forward voltage of 2.9 V at 20 mA compared to LEDs with conventional e-beam-evaporated ITO TCE.

  17. Plasma erosion opening switch in the double-pulse operation mode of a high-current electron accelerator

    International Nuclear Information System (INIS)

    Isakov, I.F.; Lopatin, V.S.; Remnev, G.E.

    1987-01-01

    This paper reports the results of investigations of the operation of a fast current opening switch, with a 10/sup 13/-10/sup 16/ plasma density produced either by dielectric surface flashover or by explosive emission of graphite. A series of two pulses was applied to two diodes in parallel. The first pulse produced plasma in the first diode which closed that diode gap by the arrival time of the second pulse. The first, shorted, diode then acted as an erosion switch for the second pulse. A factor of 2.5-3 power multiplication was obtained under optimum conditions. The opening-switch resistance during the magnetic insulation phase, neglecting the electron losses between the switch and the generating diode, exceeded 100 Ω. The duration of the rapid opening phase was less than 5 ns under optimum conditions. This method of plasma production does not require external plasma sources, and permits a wide variation of plasma density, which in turn allows high inductor currents and stored energies

  18. Electromagnetic interactions in an electron-hole plasma

    International Nuclear Information System (INIS)

    1977-01-01

    Certain problems electromagnetic interactions both of external SHF radiation with an electron-hole (eh) plasma and in the plasma itself are considered. The production and properties of a non-equilibrium eh plasma in semiconductors, pinch effect in a plasma of solids, strong electric fields in a plasma of inhomogeneous semiconductors and heat effects in a semiconductor plasma are discussed. The influence of a surface, kinetics of recombination processes in the semiconductor volume and the plasma statistics the spatial distribution of carriers, current characteristics and plasma recombination radiation under the conditions of pinch effect is described. The diagnostics methods of the phenomena are presented. The behaviour of diode structures with pn transitions in strong SHF fields is discussed. Special attention is paid to collective phenomena in the plasma of semiconductor devices and the variation of carrier density in strong fields. The appearance of electromotive force in inhomogeneous diode structures placed in strong SHF fields is considered

  19. Fabrication and Characterization of Schottky Diodes using Single Wall Carbon Nanotubes

    National Research Council Canada - National Science Library

    Luquette, Brandon E; Nichols, Barbara M

    2008-01-01

    .... Multiple cleanroom processing steps were used to make the diodes which included the deposition of marker layers, oxygen plasma etch for selective nanotube removal, and electron beam evaporation...

  20. Plasma-induced evolution behavior of space-charge-limited current for multiple-needle cathodes

    International Nuclear Information System (INIS)

    Li Limin; Liu Lie; Zhang Jun; Wen Jianchun; Liu Yonggui; Wan Hong

    2009-01-01

    Properties of the plasma and beam flow produced by tufted carbon fiber cathodes in a diode powered by a ∼500 kV, ∼400 ns pulse are investigated. Under electric fields of 230-260 kV cm -1 , the electron current density was in the range 210-280 A cm -2 , and particularly at the diode gap of 20 mm, a maximum beam power density of about 120 MW cm -2 was obtained. It was found that space-charge-limited current exhibited an evolution behavior as the accelerating pulse proceeded. There exists a direct relation between the movement of plasma within the diode and the evolution of space-charge-limited current. Initially in the accelerating pulse, the application of strong electric fields caused the emission sites to explode, forming cathode flares or plasma spots, and in this stage the space-charge-limited current was approximately described by a multiple-needle cathode model. As the pulse proceeded, these plasma spots merged and expanded towards the anode, thus increasing the emission area and shortening the diode gap, and the corresponding space-charge-limited current followed a planar cathode model. Finally, the space-charge-limited current is developed from a unipolar flow into a bipolar flow as a result of the appearance of anode plasma. In spite of the nonuniform distribution of cathode plasma, the cross-sectional uniformity of the extracted electron beam is satisfactory. The plasma expansion within the diode is found to be a major factor in the diode perveance growth and instability. These results show that these types of cathodes can offer promising applications for high-power microwave tubes.

  1. Processes governing pinch formation in diodes

    International Nuclear Information System (INIS)

    Blaugrund, A.E.; Cooperstein, G.; Goldstein, S.A.

    1975-01-01

    The process of pinch formation in large aspect ratio diodes has been studied by means of streak photography and time-resolved x-ray detectors. A tight pinch is formed at the anode center by a collapsing thin hollow electron beam. The collapse velocity depends, among other things, on the type of material in the top 1 μm layer of the anode. In a tentative model it is assumed that an anode plasma is at least partially created from gases released from the surface layer of the anode by the heating action of the beam. These gases are ionized by primary, backscattered, and secondary electrons. Ions emitted from this plasma modify the electron trajectories in the diode leading to a radial collapse of the hollow electron beam. The observed monotonic dependence of the collapse velocity on the atomic number of the anode material can be explained by the smooth dependence on Z of both the specific heat and the electron backscatter coefficient. In the case of high-Z anodes the ion expansion time appears to be the factor limiting the collapse velocity. Detailed experimental data are presented

  2. Application of AXUV diode detectors at ASDEX Upgrade

    Science.gov (United States)

    Bernert, M.; Eich, T.; Burckhart, A.; Fuchs, J. C.; Giannone, L.; Kallenbach, A.; McDermott, R. M.; Sieglin, B.

    2014-03-01

    In the ASDEX Upgrade tokamak, a radiation measurement for a wide spectral range, based on semiconductor detectors, with 256 lines of sight and a time resolution of 5μs was recently installed. In combination with the foil based bolometry, it is now possible to estimate the absolutely calibrated radiated power of the plasma on fast timescales. This work introduces this diagnostic based on AXUV (Absolute eXtended UltraViolet) n-on-p diodes made by International Radiation Detectors, Inc. The measurement and the degradation of the diodes in a tokamak environment is shown. Even though the AXUV diodes are developed to have a constant sensitivity for all photon energies (1 eV-8 keV), degradation leads to a photon energy dependence of the sensitivity. The foil bolometry, which is restricted to a time resolution of less than 1 kHz, offers a basis for a time dependent calibration of the diodes. The measurements of the quasi-calibrated diodes are compared with the foil bolometry and found to be accurate on the kHz time scale. Therefore, it is assumed, that the corrected values are also valid for the highest time resolution (200 kHz). With this improved diagnostic setup, the radiation induced by edge localized modes is analyzed on fast timescales.

  3. Application of AXUV diode detectors at ASDEX Upgrade

    International Nuclear Information System (INIS)

    Bernert, M.; Eich, T.; Burckhart, A.; Fuchs, J. C.; Giannone, L.; Kallenbach, A.; McDermott, R. M.; Sieglin, B.

    2014-01-01

    In the ASDEX Upgrade tokamak, a radiation measurement for a wide spectral range, based on semiconductor detectors, with 256 lines of sight and a time resolution of 5μs was recently installed. In combination with the foil based bolometry, it is now possible to estimate the absolutely calibrated radiated power of the plasma on fast timescales. This work introduces this diagnostic based on AXUV (Absolute eXtended UltraViolet) n-on-p diodes made by International Radiation Detectors, Inc. The measurement and the degradation of the diodes in a tokamak environment is shown. Even though the AXUV diodes are developed to have a constant sensitivity for all photon energies (1 eV-8 keV), degradation leads to a photon energy dependence of the sensitivity. The foil bolometry, which is restricted to a time resolution of less than 1 kHz, offers a basis for a time dependent calibration of the diodes. The measurements of the quasi-calibrated diodes are compared with the foil bolometry and found to be accurate on the kHz time scale. Therefore, it is assumed, that the corrected values are also valid for the highest time resolution (200 kHz). With this improved diagnostic setup, the radiation induced by edge localized modes is analyzed on fast timescales

  4. Experimental observations of electron-backscatter effects from high-atomic-number anodes in large-aspect-ratio, electron-beam diodes

    Energy Technology Data Exchange (ETDEWEB)

    Cooperstein, G; Mosher, D; Stephanakis, S J; Weber, B V; Young, F C [Naval Research Laboratory, Washington, DC (United States); Swanekamp, S B [JAYCOR, Vienna, VA (United States)

    1997-12-31

    Backscattered electrons from anodes with high-atomic-number substrates cause early-time anode-plasma formation from the surface layer leading to faster, more intense electron beam pinching, and lower diode impedance. A simple derivation of Child-Langmuir current from a thin hollow cathode shows the same dependence on the diode aspect ratio as critical current. Using this fact, it is shown that the diode voltage and current follow relativistic Child-Langmuir theory until the anode plasma is formed, and then follows critical current after the beam pinches. With thin hollow cathodes, electron beam pinching can be suppressed at low voltages (< 800 kV) even for high currents and high-atomic-number anodes. Electron beam pinching can also be suppressed at high voltages for low-atomic-number anodes as long as the electron current densities remain below the plasma turn-on threshold. (author). 8 figs., 2 refs.

  5. Two-dimensional ion effects in relativistic diodes

    International Nuclear Information System (INIS)

    Poukey, J.W.

    1975-01-01

    In relativistic diodes, ions are emitted from the anode plasma. The effects and properties of these ions are studied via a two-dimensional particle simulation code. The space charge of these ions enhances the electron emission, and this additional current (including that of the ions, themselves) aids in obtaining superpinched electron beams for use in pellet fusion studies. (U.S.)

  6. Plasma Physics An Introduction to Laboratory, Space, and Fusion Plasmas

    CERN Document Server

    Piel, Alexander

    2010-01-01

    Plasma Physics gives a comprehensive introduction to the basic processes in plasmas and demonstrates that the same fundamental concepts describe cold gas-discharge plasmas, space plasmas, and hot fusion plasmas. Starting from particle drifts in magnetic fields, the principles of magnetic confinement fusion are explained and compared with laser fusion. Collective processes are discussed in terms of plasma waves and instabilities. The concepts of plasma description by magnetohydrodynamics, kinetic theory, and particle simulation are stepwise introduced. Space charge effects in sheath regions, double layers and plasma diodes are given the necessary attention. The new fundamental mechanisms of dusty plasmas are explored and integrated into the framework of conventional plasmas. The book concludes with a brief introduction to plasma discharges. Written by an internationally renowned researcher in experimental plasma physics, the text keeps the mathematical apparatus simple and emphasizes the underlying concepts. T...

  7. Parameter changes in silicon IMPATT diodes for mm wavelength range exposed to gamma-radiation

    International Nuclear Information System (INIS)

    Shcherbina, L.V.; Torchinskaya, T.V.; Shcherbina, E.S.; Polupan, G.P.

    1999-01-01

    We investigated the p + -n-n + -silicon mesa-diodes fabricated using batch technique whose breakdown voltage was 19±1 V. The exposition of IMPATT diodes to 60 Co gamma-radiation was made in the 10 3 to 10 7 Gy dose range. When the gamma-irradiation dose was increased up to (5-8)*10 5 Gy, then the thermal-generation component of the reverse current was monotonously decreasing. The breakdown voltage remained the same during gamma-irradiation. It was shown experimentally that exposition of diodes to (5-8)*10 5 Gy doses of gamma-irradiation led to some drop of both the number of microplasmas in the avalanche breakdown region and the micro plasma noise level. 60 Co gamma-irradiation in the 10 3 -8*10 5 Gy dose range led also to the growth of the microwave output power P out . The decrease of the micro plasma number in the avalanche breakdown region and Pout growth may be explained if one assumes that gamma-irradiation in the 10 3 - 8*10 5 Gy dose range leads to 'healing' of structural defects in the semiconductor due to their interaction with the radiation-induced point defects. The gamma-irradiation dose increase over 8*10 5 Gy results in a storage of some radiation-induced defects in the IMPATT diode base and electrical parameters of diodes are degrading

  8. Effect of plasma formation on electron pinching and microwave emission in a virtual cathode oscillator

    International Nuclear Information System (INIS)

    Yatsuzuka, M.; Nakayama, M.; Nobuhara, S.; Young, D.; Ishihara, O.

    1996-01-01

    Time and spatial evolutions of anode and cathode plasmas in a vircator diode were observed with a streak camera. A cathode plasma appeared immediately after the rise of a beam current and was followed by an anode plasma typically after about 30 ns. Both plasmas expanded with almost the same speed of order of 104 m/s. The anode plasma was confirmed as a hydrogen plasma with an optical filter for H β line and study of anode-temperature rise. Electron beam pinching immediately followed by microwave emission was observed at the beam current less than the critical current for diode pinching in the experiment and the simulation. The electron beam current in the diode region is well characterized by the electron space-charge-limited current in bipolar flow with the expanding plasmas between the anode-cathode gap. As a result, electron bombardment produced the anode plasma, which made the electron beam strongly pinched, resulting in virtual cathode formation and microwave emission. (author). 5 figs., 5 refs

  9. Plasma physics an introduction to laboratory, space, and fusion plasmas

    CERN Document Server

    Piel, Alexander

    2017-01-01

    The enlarged new edition of this textbook provides a comprehensive introduction to the basic processes in plasmas and demonstrates that the same fundamental concepts describe cold gas-discharge plasmas, space plasmas, and hot fusion plasmas. Starting from particle drifts in magnetic fields, the principles of magnetic confinement fusion are explained and compared with laser fusion. Collective processes are discussed in terms of plasma waves and instabilities. The concepts of plasma description by magnetohydrodynamics, kinetic theory, and particle simulation are stepwise introduced. Space charge effects in sheath regions, double layers and plasma diodes are given the necessary attention. The novel fundamental mechanisms of dusty plasmas are explored and integrated into the framework of conventional plasmas. The book concludes with a concise description of modern plasma discharges. Written by an internationally renowned researcher in experimental plasma physics, the text keeps the mathematical apparatus simple a...

  10. Impedance characteristics of the Bz diode on the LION accelerator

    International Nuclear Information System (INIS)

    Meyerhofer, D.D.; Horioka, K.; Kusse, B.; Rondeau, G.; Struckman, C.

    1987-01-01

    The LION accelerator at Cornell University is being used to study the characteristics of the applied B/sub z/, or 'barrel' diode. This 0.8 TW, 4 ohm, ion accelerator has the ability to take several shots per day, and hence alloys systematic scans to be performed. An important result of a recent series of experiments is that the diode impedance remains relatively constant, decaying only slowly, during the 50 nsec pulse. When the diode is operated with a 4.5 mm gap and a 21 kG insulating magnetic field, the typical diode parameters, are a voltage of 1 MV and a total current of 250 kA, leading to a diode impedance of 4 ohms and power of 0.25 TW. The diode impedance decays with a 100 nsec time constant. The ion beams have peak currents of roughly 125 kA and typical impedances of Bohms, which decays with a time constant of 25 nsec. The Child-Langmuir gap was approximately 2 mm and closed with a velocity of roughly 2X10/sup 6/ cm/sec. Current experimental work is aimed at characterizing the impedance of the B/sub z/ diode as a function of the applied magnetic field, the A-K gap, the anode curvature, and the anode groove parameters. In addition, the effect of changing the voltage rise with a plasma opening switch and of adding an electron limiter is examined. The ion beam quality is examined at the focus of the barrel diode with a swept Thomson parabola and various Rutherford scattering diagnostics

  11. Contribution of the backstreaming ions to the self-magnetic pinch (SMP) diode current

    Science.gov (United States)

    Mazarakis, Michael G.; Bennett, Nichelle; Cuneo, Michael E.; Fournier, Sean D.; Johnston, Mark D.; Kiefer, Mark L.; Leckbee, Joshua J.; Nielsen, Dan S.; Oliver, Bryan V.; Sceiford, Matthew E.; Simpson, Sean C.; Renk, Timothy J.; Ruiz, Carlos L.; Webb, Timothy J.; Ziska, Derek; Droemer, Darryl W.; Gignac, Raymond E.; Obregon, Robert J.; Wilkins, Frank L.; Welch, Dale R.

    2018-04-01

    through a hollow cathode tip for various diode configurations and different techniques of target cleaning treatment: namely, heating at very high temperatures with DC and pulsed current, with RF plasma cleaning, and with both plasma cleaning and heating. We have also evaluated the A-K gap voltage by energy filtering technique. Experimental results in comparison with LSP simulations are presented.

  12. Velocity spread of REB generated by high current diode

    International Nuclear Information System (INIS)

    Vrba, P.

    1994-05-01

    A theoretical analysis and numerical simulations of the Relativistic Electron Beam (REB) generation in a high current diode immersed in an external magnetic field were performed. The calculations confirmed the generated beam to be homogeneous and monoenergetic in a broad central region. In the case of a cylindrical diode the mixing of electron trajectories was only observed in a narrow peripheral beam region. The angle between particle trajectories and the external longitudinal magnetic field varies chaotically form 0 to -25 deg. This phenomenon suppresses the excitation of the two-stream instability excited by REB in a plasma column. (author) 2 tabs., 12 figs., 7 refs

  13. Development of Schottky diode detectors at Research Institute of Electrical Communication, Tohoku University

    International Nuclear Information System (INIS)

    Mizuno, K.; Ono, S.; Suzuki, T.; Daiku, Y.

    1982-01-01

    Schottky diode detectors are widely used as fast, sensitive submillimeter detectors in plasma physics, radio astronomy, frequency standards and so on. In this paper, the research on submillimeter Schottky diodes at Tohoku University is described. A brief description is given on the theoretical examination of diode parameters for video detection in design and on the fabrication of n/n + GaAs Schottky diode chips. Antennas for Schottky barrier diodes are discussed. Three types of antenna structures have been proposed, and used for whisker-contacted Schottky diodes so far. These are compared with each other for their frequency response and gain. The bicone type antenna is promising because of its larger frequency response, but the optimum design for this type of antenna has not yet sufficiently been obtained. As the application of Schottky barrier diodes, the intensity modulation of submillimeter laser and a quasi-optically coupled harmonic mixer have been studied. The modulation degree of about 4 % for HCN laser output has been so far obtained at the maximum modulation frequency of 2 GHz. Since 1976, a quasi-optically coupled harmonic mixer has been used with a Schottky diode in harmonic mixing between microwaves, millimeter waves, and submillimeter waves. (Wakatsuki, Y.)

  14. Solid Sampling with a Diode Laser for Portable Ambient Mass Spectrometry.

    Science.gov (United States)

    Yung, Yeni P; Wickramasinghe, Raveendra; Vaikkinen, Anu; Kauppila, Tiina J; Veryovkin, Igor V; Hanley, Luke

    2017-07-18

    A hand-held diode laser is implemented for solid sampling in portable ambient mass spectrometry (MS). Specifically, a pseudocontinuous wave battery-powered surgical laser diode is employed for portable laser diode thermal desorption (LDTD) at 940 nm and compared with nanosecond pulsed laser ablation at 2940 nm. Postionization is achieved in both cases using atmospheric pressure photoionization (APPI). The laser ablation atmospheric pressure photoionization (LAAPPI) and LDTD-APPI mass spectra of sage leaves (Salvia officinalis) using a field-deployable quadrupole ion trap MS display many similar ion peaks, as do the mass spectra of membrane grown biofilms of Pseudomonas aeruginosa. These results indicate that LDTD-APPI method should be useful for in-field sampling of plant and microbial communities, for example, by portable ambient MS. The feasibility of many portable MS applications is facilitated by the availability of relatively low cost, portable, battery-powered diode lasers. LDTD could also be coupled with plasma- or electrospray-based ionization for the analysis of a variety of solid samples.

  15. Development of a Laser Induced Fluorescence (LIF) System with a Tunable Diode Laser

    International Nuclear Information System (INIS)

    Woo, Hyun Jong; Do, Jeong Jun; You, Hyun Jong; Choi, Geun Sik; Lee, Myoung Jae; Chung, Kyu Sun

    2005-01-01

    The Laser Induced Fluorescence (LIF) is known as one of the most powerful techniques for measurements of ion velocity distribution function (IVDF) and ion temperature by means of Doppler broadening and Doppler shift. The dye lasers are generally used for LIF system with 611.66 nm (in vac.) for Ar ion, the low power diode laser was also proposed by Severn et al with the wavelength of 664.55 nm and 668.61 nm (in vac.) for Ar ion. Although the diode laser has the disadvantages of low power and small tuning range, it can be used for LIF system at the low temperature plasmas. A tunable diode laser with 668.614 nm of center wavelength and 10 GHz mode hop free tuning region has been used for our LIF system and it can be measured the ion temperature is up to 1 eV. The ion temperature and velocity distribution function have been measured with LaB6 plasma source, which is about 0.23 eV with Ar gas and 2.2 mTorr working pressure

  16. Effects of plasma polymerized para-xylene intermediate layers on characteristics of flexible organic light emitting diodes fabricated on polyethylene terephthalate substrates

    International Nuclear Information System (INIS)

    Sohn, Sunyoung; Kim, Kyuhyung; Kho, Samil; Jung, Donggeun; Boo, Jin-hyo

    2008-01-01

    Characteristics of flexible organic light emitting diodes (FOLEDs) with the plasma polymerized para-xylene (PPpX) intermediate layer were investigated. For the purpose of reducing moisture permeation through plastic substrates, a PPpX intermediate layer was inserted between FOLEDs and the plastic substrates. As the concentration of C-H bonding in the PPpX film deposited at 25 deg. C was increased, PPpX films showed increased transmittance. Surface morphologies of polyethylene terephthalate (PET) covered with the PPpX intermediate layer were improved compared to PET without PPpX on it. Due to the highly cross-linked network structure in the plasma polymer film, water vapor permeability of PET substrates with the PPpX intermediate layer of 75 nm was decreased compared to PET substrates without PPpX on it. FOLEDs with the PPpX intermediate layer showed improved optical and electrical characteristics as well as lifetimes than FOLEDs without the PPpX intermediate layer

  17. Laboratory of plasma studies. Papers on high power particle beams

    International Nuclear Information System (INIS)

    Anon.

    1990-01-01

    This book contains paper on Exploding metal film active anode sources experiments on the Lion extractor Ion Diode; Long conductor time plasma opening switch experiments; and Focusing studies of an applied B r extraction diode on the Lion accelerator

  18. Effect of plasma formation on electron pinching and microwave emission in a virtual cathode oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Yatsuzuka, M; Nakayama, M; Nobuhara, S [Himeji Institute of Technology (Japan); Young, D; Ishihara, O [Texas Tech Univ., Lubbock, TX (United States)

    1997-12-31

    Time and spatial evolutions of anode and cathode plasmas in a vircator diode were observed with a streak camera. A cathode plasma appeared immediately after the rise of a beam current and was followed by an anode plasma typically after about 30 ns. Both plasmas expanded with almost the same speed of order of 104 m/s. The anode plasma was confirmed as a hydrogen plasma with an optical filter for H{sub {beta}} line and study of anode-temperature rise. Electron beam pinching immediately followed by microwave emission was observed at the beam current less than the critical current for diode pinching in the experiment and the simulation. The electron beam current in the diode region is well characterized by the electron space-charge-limited current in bipolar flow with the expanding plasmas between the anode-cathode gap. As a result, electron bombardment produced the anode plasma, which made the electron beam strongly pinched, resulting in virtual cathode formation and microwave emission. (author). 5 figs., 5 refs.

  19. Spectroscopic measurements of anode plasma with cryogenic pulsed ion sources

    International Nuclear Information System (INIS)

    Yoneda, H.; Urata, T.; Ohbayashi, K.; Kim, Y.; Horioka, K.; Kasuya, K.

    1987-01-01

    In ion beam diodes, electromagnetic wave is coupled to ion beam. Ion is extracted from anode plasma, which is produced early in the power pulse. However, exact mechanism of anode plasma production, expansion and ion extraction process is unknown. In particularly, anode plasma expansion is seemed to be one of the reasons of rapid impedance collapse of the diode, which is serious problem in high power experiments. Some experimental results showed that anode plasma expansion velocity was about 5 times larger than that inferred from simple thermal velocity. Several explanations for these results were proposed; for example, electron collisionarity in anode plasma, fast neutral gas particle, diamagnetism. To solve this question, it is necessary to measure the characteristic of anode plasma with space and time resolution. The authors made spectroscopic measurements to investigate variety of electron temperature, electron density, expansion velocity of anode plasma with various ion sources

  20. Contribution of the backstreaming ions to the Self-Magnetic pinch (SMP) diode current

    Energy Technology Data Exchange (ETDEWEB)

    Mazarakis, Michael G.; Cuneo, Michael E.; Fournier, Sean D.; Johnston, Mark D.; Kiefer, Mark L.; Leckbee, Joshua J.; Nielsen, Dan S.; Oliver, Bryan V.; Simpson, Sean; Renk, Timothy J.; Webb, Timothy J.; Ziska, Derek; Bennett, Nichelle; Droemer, Darryl W.; Cignac, Raymond E.; Obregon, Robert J.; Smith, Chase C.; Wilkins, Frank L.; Welch, Dale R.

    2016-08-08

    Summary form only given. The results presented here were obtained with an SMP diode mounted at the front high voltage end of the RITS accelerator. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulses of six 1.3 MV inductively insulated cavities. Our experiments had two objectives: first to measure the contribution of the back-streaming ion currents emitted from the anode target to the diode beam current, and second to try to evaluate the energy of those ions and hence the actual Anode-Cathode (A-K) gap actual voltage. In any very high voltage inductive voltage adder (IVA) utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the anode-cathode (A-K) gap is problematic. The accelerating voltage quoted in the literature is from estimates based on measurements of the anode and cathode currents of the MITL far upstream from the diode and utilizing the para-potential flow theories and inductive corrections. Thus it would be interesting to have another independent measurement to evaluate the A-K voltage. The diode's anode is made of a number of high Z metals in order to produce copious and energetic flash x-rays. The backstreaming currents are a strong fraction of the anode materials and their stage of cleanness and gas adsorption. We have measured the back-streaming ion currents emitted from the anode and propagating through a hollow cathode tip for various diode configurations and different techniques of target cleaning treatments, such as heating to very high temperatures with DC and pulsed current, with RF plasma cleaning and with both plasma cleaning and heating. Finally, we have also evaluated the A-K gap voltage by ion filtering techniques.

  1. Spectroscopic observations of ion line-emission from a magnetically insulated ion diode

    International Nuclear Information System (INIS)

    Maron, Y.; Peng, H.S.; Rondeau, G.D.; Hammer, D.A.

    1984-01-01

    Excited ions, produced in the surface-flashover plasma in a magnetically insulated diode, spontaneously emit light from the anode plasma region as well as (if the life time of the excited level is at least a few ns) from the diode acceleration gap. The emission lines of the ions traversing the gap are shifted from their natural wavelength because of the Stark effect due to the diode electric field. If the light is viewed transverse to the acceleration direction, the line width will be mostly determined by Doppler broadening due to ion transverse velocities. The authors use the OMNI II diode (up to 500 kV, 25 kA, 80 ns) with an insulating B field of ≅12 kG and an A-K gap of ≅7mm. The light emission from the entire 6.5 x 12 cm area in front of the anode is viewed parallel to the applied B field. A spectral resolution of 0.5 A is obtained by dispersing the light using a spectrometer followed by 6 optical fibers attached to PM-tubes. Each channel output is calibrated in situ. The spatial resolution across the gap could be made as small as 0.3 mm and the temporal resolution was varied between a few to a few tens of ns. The line spectral profile is obtained at a single discharge for a given distance from the anode surface

  2. Steady states of a diode with counterstreaming electron and positron beams

    Energy Technology Data Exchange (ETDEWEB)

    Ender, A. Ya.; Kuznetsov, V. I., E-mail: victor.kuznetsov@mail.ioffe.ru; Gruzdev, A. A. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

    2016-10-15

    Steady states of a plasma layer with counterstreaming beams of oppositely charged particles moving without collisions in a self-consistent electric field are analyzed. The study is aimed at clarifying the mechanism of generation and reconstruction of pulsar radiation. Such a layer also models the processes occurring in Knudsen plasma diodes with counterstreaming electron and ion beams. The steady-state solutions are exhaustively classified. The existence of several solutions at the same external parameters is established.

  3. Local electron flow to the anode in a magnetically insulated diode

    International Nuclear Information System (INIS)

    Maron, Y.

    1984-01-01

    Local electron flux to the anode of a magnetically insulated diode is monitored. Intense electron burst to the anode and slow variations in the electron flux are observed. Unlike the slow signals the bursts are accompanied by sharp increases in microwave emission and by increases in the ion current density. The electron bursts are not affected by the presence of the anode plasma. Indications suggest that the bursts are initiated by processes in the cathode plasma

  4. Simulation of electron and ion bipolar flow in high current diode with magnetic insulation

    International Nuclear Information System (INIS)

    Vrba, P.; Engelko, V.I.

    1990-08-01

    Numerical simulation of the formation of the collector ion flow in a magnetically insulated ion diode (MID) with a hollow cylindrical and cone-shaped cathode was studied. Such cathodes are often used for the production of tubular high current microsecond electron beams. The ions, emitted by the collector and born as a result of ionization of the residual gas by the electron beam, are focused into the cathode plasma region. This effect can adversely influence the diode operation

  5. Intense, pulsed, ion-diode sources and their application to mirror machines

    International Nuclear Information System (INIS)

    Prono, D.S.; Shearer, J.W.; Briggs, R.J.

    1975-01-01

    Startup conditions for future mirror fusion experiments require a rapidly formed target plasma of approximately 0.5 coulomb of ions with energy of 50 to 100 keV. Theory suggests that very intense ion-flux emission satisfying these requirements can be extracted from a pulsed ion diode. Developing such sources would be an ideal CTR application of the high-power, single-shot capability of pulsed power technology. Recent experimental results are reviewed in which approximately 2 kA/cm 2 of D + at approximately 50 keV was extracted. In the experiment, an intense relativistic electron beam undergoes many transits through a solid but range-thin anode foil. With each transit the electrons lose energy, causing their trajectories to collapse toward the anode surface. In so doing, the increased space charge extracts an intense ion flux from the anode foil's plasma. Observations are reported on the importance of diode stability. The general agreement between theoretical scaling laws and experimental results are also presented

  6. Features of space-charge-limited emission in foil-less diodes

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Ping; Yuan, Keliang; Liu, Guozhi [Department of Engineering Physics, Tsinghua University, Beijing 100084 (China); Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi' an 710024 (China); Sun, Jun [Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi' an 710024 (China)

    2014-12-15

    Space-charge-limited (SCL) current can always be obtained from the blade surface of annular cathodes in foil-less diodes which are widely used in O-type relativistic high power microwave generators. However, there is little theoretical analysis regarding it due to the mathematical complexity, and almost all formulas about the SCL current in foil-less diodes are based on numerical simulation results. This paper performs an initial trial in calculation of the SCL current from annular cathodes theoretically under the ultra-relativistic assumption and the condition of infinitely large guiding magnetic field. The numerical calculation based on the theoretical research is coherent with the particle-in-cell (PIC) simulation result to some extent under a diode voltage of 850 kV. Despite that the theoretical research gives a much larger current than the PIC simulation (41.3 kA for the former and 9.7 kA for the latter), which is induced by the ultra-relativistic assumption in the theoretical research, they both show the basic characteristic of emission from annular cathodes in foil-less diodes, i.e., the emission enhancement at the cathode blade edges, especially at the outer edge. This characteristic is confirmed to some extent in our experimental research of cathode plasma photographing under the same diode voltage and a guiding magnetic field of 4 T.

  7. Pulsed corona generation using a diode-based pulsed power generator

    Science.gov (United States)

    Pemen, A. J. M.; Grekhov, I. V.; van Heesch, E. J. M.; Yan, K.; Nair, S. A.; Korotkov, S. V.

    2003-10-01

    Pulsed plasma techniques serve a wide range of unconventional processes, such as gas and water processing, hydrogen production, and nanotechnology. Extending research on promising applications, such as pulsed corona processing, depends to a great extent on the availability of reliable, efficient and repetitive high-voltage pulsed power technology. Heavy-duty opening switches are the most critical components in high-voltage pulsed power systems with inductive energy storage. At the Ioffe Institute, an unconventional switching mechanism has been found, based on the fast recovery process in a diode. This article discusses the application of such a "drift-step-recovery-diode" for pulsed corona plasma generation. The principle of the diode-based nanosecond high-voltage generator will be discussed. The generator will be coupled to a corona reactor via a transmission-line transformer. The advantages of this concept, such as easy voltage transformation, load matching, switch protection and easy coupling with a dc bias voltage, will be discussed. The developed circuit is tested at both a resistive load and various corona reactors. Methods to optimize the energy transfer to a corona reactor have been evaluated. The impedance matching between the pulse generator and corona reactor can be significantly improved by using a dc bias voltage. At good matching, the corona energy increases and less energy reflects back to the generator. Matching can also be slightly improved by increasing the temperature in the corona reactor. More effective is to reduce the reactor pressure.

  8. Diode pumped solid state laser by two diodes

    International Nuclear Information System (INIS)

    Li Mingzhong; Zhang Xiaomin; Liang Yue; Man Yongzai; Zhou Pizhang

    1995-01-01

    A Nd: YLF laser is pumped by home-made quantum well diode lasers. Datum of laser output energy 60 μJ and peak power 120 mw are observed at wavelength 1.047 μm. On the same pumping condition, the output power synchronously pumped by two diodes is higher than the total output power pumped by two diodes separately. The fluctuation is <3%. The results agree with theoretical analysis

  9. Transmission and compression of an intense relativistic electron beam produced by a converging annular diode with return current feedback through the cathode. Pt. 2. The experiments

    International Nuclear Information System (INIS)

    Kelly, J.G.; Schuch, R.L.

    1976-02-01

    The complete results of the experiments with the converging annular diode within return current fedback through the cathode (Triax) are reported herein. The diode was designed to focus a relativistic high-current electron beam to a small focus. It did confirm the Triaxial theory detailed in Part I, and it did achieve a factor of 10 areal compression with 50% efficiency (which was below expectations). There were two principal reasons for this shortfall. First, the rapid diode plasma motion of 10 cm/μsec that was discovered necessitated the use of larger A-K gaps than expected and led to thicker beam sheets than are needed for good focusing. Second, the intrinsic angular spread of the electrons, even from the best cathode surfaces, introduced excessive angular momentum into the beam so that only a minor portion of the electrons could reach the axis. However, the yield of useful information about diode physics in general and about the influence of prepulse, the role of diode plasmas, the motion of energetic beams within conducting boundaries, diode emission properties, and diode diagnostic techniques in particle has had a significant and useful impact on the electron beam program at Sandia

  10. Study of opening switch characteristics of a plasma focus

    International Nuclear Information System (INIS)

    Rhee, M.J.; Schneider, R.F.

    1985-01-01

    It is shown that a current charged transmission line and an opening switch can be used as an inductive energy storage system to produce a high power pulse. A plasma focus device, in which a transmission line is inserted in series with the capacitor bank and a coaxial gun, is considered as an inductive energy storage system. The m = 0 instability in the plasma focus is utilized as an opening switch and the disrupted plasma column is considered as bipolar diode. The system is described preferably by the transmission line theory rather than the lumped circuit theory. The relationship between the output voltage and the current drop is given by V = ΔIZ, where Z is the characteristic impedance of the transmission line. The current drop ΔI depends on the mismatched load impedance of the plasma diode which is governed by nature of the m = 0 instability

  11. Time-of-flight measurements of heavy ions using Si PIN diodes

    Energy Technology Data Exchange (ETDEWEB)

    Strekalovsky, A. O., E-mail: alex.strek@bk.ru; Kamanin, D. V. [Joint Institute for Nuclear Research (Russian Federation); Pyatkov, Yu. V. [National Nuclear Research University MEPhI (Moscow Engineering Physics Institute) (Russian Federation); Kondratyev, N. A.; Zhuchko, V. E. [Joint Institute for Nuclear Research (Russian Federation); Ilić, S. [University of Novi Sad (Serbia); Alexandrov, A. A.; Alexandrova, I. A. [Joint Institute for Nuclear Research (Russian Federation); Jacobs, N. [University of Stellenbosch, Faculty of Military Science, Military Academy (South Africa); Kuznetsova, E. A.; Mishinsky, G. V.; Strekalovsky, O. V. [Joint Institute for Nuclear Research (Russian Federation)

    2016-12-15

    A new off-line timing method for PIN diode signals is presented which allows the plasma delay effect to be suppressed. Velocities of heavy ions measured by the new method are in good agreement within a wide range of masses and energies with velocities measured by time stamp detectors based on microchannel plates.

  12. Conference record of the 1986 IEEE international conference on plasma science

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    This book presents the papers given at a conference on plasma science. Topics considered at the conference included inverse diode computations, collisional ion heating, gyrotron phase locking using a modulated electron beam, klystrons and lasertrons, radiation pressure on moving plasma, RF heating by cylindrical plasma waveguide modes, and deionization phase characteristics of hydrogen thyratron plasmas

  13. High-Current Plasma Electron Sources

    International Nuclear Information System (INIS)

    Gushenets, J.Z.; Krokhmal, V.A.; Krasik, Ya. E.; Felsteiner, J.; Gushenets, V.

    2002-01-01

    In this report we present the design, electrical schemes and preliminary results of a test of 4 different electron plasma cathodes operating under Kg h-voltage pulses in a vacuum diode. The first plasma cathode consists of 6 azimuthally symmetrically distributed arc guns and a hollow anode having an output window covered by a metal grid. Plasma formation is initiated by a surface discharge over a ceramic washer placed between a W-made cathode and an intermediate electrode. Further plasma expansion leads to a redistribution of the discharge between the W-cathode and the hollow anode. An accelerating pulse applied between the output anode grid and the collector extracts electrons from this plasma. The operation of another plasma cathode design is based on Penning discharge for preliminary plasma formation. The main glow discharge occurs between an intermediate electrode of the Penning gun and the hollow anode. To keep the background pressure in the accelerating gap at P S 2.5x10 4 Torr either differential pumping or a pulsed gas puff valve were used. The operation of the latter electron plasma source is based on a hollow cathode discharge. To achieve a sharp pressure gradient between the cathode cavity and the accelerating gap a pulsed gas puff valve was used. A specially designed ferroelectric plasma cathode initiated plasma formation inside the hollow cathode. This type of the hollow cathode discharge ignition allowed to achieve a discharge current of 1.2 kA at a background pressure of 2x10 4 Torr. All these cathodes were developed and initially tested inside a planar diode with a background pressure S 2x10 4 Torr under the same conditions: accelerating voltage 180 - 300 kV, pulse duration 200 - 400 ns, electron beam current - 1 - 1.5 kA, and cross-sectional area of the extracted electron beam 113 cm 2

  14. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  15. The vortex-like self-consistent electron fluid model by the applied-B ion diode: equilibrium and instability

    International Nuclear Information System (INIS)

    Gordeev, A.V.

    1996-01-01

    The electron inertia effects in the one-dimensional model of the applied-B ion diode for the relativistic diode potential eU/m e c 2 ≥ 1 were investigated, where the magnetic Debye length r B is of the order of the collisionless electron skin depth c/ω pe . For this, an analytical relation between the magnetic field and the electric potential was developed, owing to which the second order eigenvalue problem can be reduced to a system of algebraic equations. Instabilities inside the vacuum gap and in the near-anode emitting plasma are considered. In the near-anode Hall plasma, the instability with two ion species was obtained; this can can contribute to the ion angle divergence. (author). 10 refs

  16. The vortex-like self-consistent electron fluid model by the applied-B ion diode: equilibrium and instability

    Energy Technology Data Exchange (ETDEWEB)

    Gordeev, A V [Kurchatov Institute, Moscow (Russian Federation). Nuclear Fusion Institute

    1997-12-31

    The electron inertia effects in the one-dimensional model of the applied-B ion diode for the relativistic diode potential eU/m{sub e}c{sup 2} {>=} 1 were investigated, where the magnetic Debye length r{sub B} is of the order of the collisionless electron skin depth c/{omega}{sub pe}. For this, an analytical relation between the magnetic field and the electric potential was developed, owing to which the second order eigenvalue problem can be reduced to a system of algebraic equations. Instabilities inside the vacuum gap and in the near-anode emitting plasma are considered. In the near-anode Hall plasma, the instability with two ion species was obtained; this can can contribute to the ion angle divergence. (author). 10 refs.

  17. Magnetic insulation regimes in high-current diodes and transmission lines of conical configuration

    International Nuclear Information System (INIS)

    Vasilenko, O.I.; Voronin, V.S.; Lebedev, A.N.

    1977-01-01

    Steady states of the electron current in a high-voltage diode and of the transmission line of conical configuration at emission current restriction by the space are considered on the basis of the self-consistant kinetic description in connection with the prospects of controlled thermonuclear synthesis. Proceeding from the magnetic self-insulation principle solved are the problems of controling the emission electron current in the double-electron geometry to prevent it from being present on the anode in the line regime and to achieve its maximum focusing in the diode regime. The motion of plasma boundaries as well as the probable contribution of the ion component of the current were not taken into consideration. It is shown that the beam focusing on the system axis takes place at sufficiently strong currents. It is connected with the fact that some part of the full diode current runs on the cathode surface. The results were compared with existing approximate diode models and with the experimetal data on focusien of strong-current beams

  18. Characterization and investigation of the anomalous behavior of the immersed-Bz diode during operation at 4 to 5 MV

    International Nuclear Information System (INIS)

    Rovang, D. C.; Bruner, N.; Johnston, M. D.; Madrid, E. A.; Maenchen, J. E.; Oliver, B. V.; Portillo, S.; Welch, D. R.

    2008-01-01

    The immersed-B z diode is being developed as a high-brightness, flash x-ray radiography source at Sandia National Laboratories. This diode is a foil-less electron-beam diode with a long, thin, needlelike cathode which is inserted into the bore of a solenoid. The solenoidal magnetic field guides the electron beam emitted from the cathode to the anode while maintaining a small beam radius. The electron beam strikes a thin, high-atomic-number anode and produces forward-directed bremsstrahlung. In addition, electron beam heating of the anode produces surface plasmas allowing ion emission. Two different operating regimes for this diode have been identified: A nominal operating regime where the total diode current is characterized as classically bipolar with stable impedance [see D. C. Rovang et al., Phys. Plasmas 14, 113107 (2007)] and an anomalous operating regime characterized by a rapid impedance collapse where the total diode current greatly exceeds the bipolar limit. The operating regimes are approximately separated by cathode diameters greater than 3 mm for the nominal regime and less than 3 mm for the anomalous impedance collapse regime. Results from a comprehensive series of experiments conducted at 4-5 MV characterizing the transition from this nominal operating regime to the anomalous operating regime as the cathode diameter is reduced are presented. Results from experiments investigating the effects of anode-cathode gap, anode material, and cryogenic modification of the anode surface are also presented. Although these investigations were unsuccessful in completely mitigating the anomalous behavior, insight gained from these experiments has elucidated several key physics issues that are discussed.

  19. Parametric study of x-ray pre-ionizer with plasma cathode

    International Nuclear Information System (INIS)

    Bollanti, S.; Di Lazzaro, P.; Flora, F.; Giordano, G.; Letardi, T.; Schina, G.; Zheng, C.

    1993-01-01

    The construction characteristics and the performance of an x-ray diode working at 200 Hz are described. The temporal behavior of both the plasma cathode emission and the diode discharge was studied, including the measurements of vacuum effects on the repetition rate and lifetime capability, pre-ionization versus electrical features, and ionization density versus dosage. This simple and low-cost x-ray diode was used to uniformly pre-ionize a half-liter XeCl laser, delivering an output laser energy of 800 mJ/shot at a 100-Hz repetition rate

  20. Effect of N incorporation on the characteristics of InSbN P–N diodes

    International Nuclear Information System (INIS)

    Lim, K.P.; Pham, H.T.; Yoon, S.F.; Tan, K.H.

    2012-01-01

    We report on the effect of N incorporation in the characteristics of the 2 μm thick InSbN photoabsorption layer of a p–n diode grown by molecular beam epitaxy using a radio-frequency plasma-assisted nitrogen source. As compared to N free InSb layer, the absorption wavelength extends to near 9 μm. On the other hand, high reverse dark current and series resistances are observed in the electrical characteristics of the InSbN diode which are contributed with the presence of planar growth defects. These results will be useful to those working on midinfrared photodetectors.

  1. Plasma x-ray radiation source.

    Science.gov (United States)

    Popkov, N F; Kargin, V I; Ryaslov, E A; Pikar', A S

    1995-01-01

    This paper gives the results of studies on a plasma x-ray source, which enables one to obtain a 2.5-krad radiation dose per pulse over an area of 100 cm2 in the quantum energy range from 20 to 500 keV. Pulse duration is 100 ns. Spectral radiation distributions from a diode under various operation conditions of a plasma are obtained. A Marx generator served as an initial energy source of 120 kJ with a discharge time of T/4 = 10-6 s. A short electromagnetic pulse (10-7 s) was shaped using plasma erosion opening switches.

  2. Coaxial foilless diode

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng [College of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China)

    2014-05-15

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  3. Simulation study of magnetically insulated power coupling to the applied-B ion diode

    International Nuclear Information System (INIS)

    Rosenthal, S.E.

    1992-01-01

    Power coupling to the applied-B ion diode from magnetically insulated transmission lines is simply described in terms of the voltage-current characteristics of both the diode and the transmission line. The accelerator load line intersects the composite characteristic at the operating voltage and current. Using 2-D PIC simulation, the authors have investigated how modification of either the ion diode or the magnetically insulated transmission line characteristic influences power coupling. Plasma prefill can modify the ion diode characteristic; a partially opened POS in the transmission line upstream of the ion diode is a possible cause of modification of the magnetically insulated transmission line characteristic. It can be useful to consider these two aspects of power coupling separately, but they are actually not independent. A good parameter to characterize the situation is the flow impedance, given by V/(I a 2 I c 2 ) 1/2 . V is the line voltage; I a and I c are the conduction currents flowing through the anode and cathode, respectively. The flow impedance covers a range from one half the vacuum impedance, for saturated magnetically insulated flow, to just below the vacuum impedance, for highly unsaturated flow. As the term ''flow impedance'' implies, low flow impedance coincides with greater electron flow while high flow impedance coincides with less electron flow. The flow impedance is sensitive to both the transmission line and the diode impedance. They show how the two are related, using the flow impedance as a parameter

  4. Coaxial foilless diode

    Directory of Open Access Journals (Sweden)

    Long Kong

    2014-05-01

    Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  5. Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

    Science.gov (United States)

    Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang

    2013-01-23

    Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

  6. Rod-pinch diode operation at 2 to 4 MV for high resolution pulsed radiography

    International Nuclear Information System (INIS)

    Young, F.C.; Commisso, R.J.; Allen, R.J.; Mosher, D.; Swanekamp, S.B.; Cooperstein, G.; Bayol, F.; Charre, P.; Garrigues, A.; Gonzales, C.; Pompier, F.; Vezinet, R.

    2002-01-01

    The rod-pinch diode is operated successfully at peak voltages of 2.4-4.4 MV for peak electrical currents of 55-135 kA delivered to the diode. At 4 MV, tungsten anode rods of 1 or 2 mm diam produce on-axis doses at 1 m of 16 rad(Si) or 20 rad(Si), respectively. The on-axis source diameter based on the full width at half-maximum (FWHM) of the line-spread function (LSF) is 0.9±0.1 mm for a 1 mm diam rod and 1.4±0.1 mm for a 2 mm diam rod, independent of voltage. The LANL source diameter, determined from the modulation transfer function of the LSF, is nearly twice the FWHM. The measured rod-pinch current is reproduced with a diode model that includes ions and accounts for anode and cathode plasma expansion

  7. Finite ion velocity effects on the stability of Pierce-like diodes

    International Nuclear Information System (INIS)

    Kolinsky, H.; Schamel, H.

    1994-01-01

    The stability of Pierce-like plasma diodes is investigated for arbitrary ion injection velocities. A recently developed integral formalism that accounts for ion dynamical effects is applied to derive a generalized dispersion relation for electrostatic perturbations. Its evaluation exhibits several new features, such as the appearance of growing oscillatory modes, which become Pierce--Buneman modes in the limit of initially resting ions, and of weakly damped oscillatory modes, which become undamped ion plasma oscillations in this limit. The stability of this bounded plasma system is shown to be controlled by the new control parameter at signga=α(1+at signgm) 1/2 , where α is the Pierce parameter and at signgm≡m ev 2 e0 /m iv 2 i0 the ratio of electron and ion kinetic energy at the emitter

  8. Comparative study of the action of two different types of bleaching agents activated by two different types of irradiation fonts: xenon plasma arc lamp and 960 nm diode laser

    International Nuclear Information System (INIS)

    Walverde, Debora Ayala

    2001-01-01

    This in vitro study compares two different types of tooth bleaching agents stimulated with two different irradiation fonts. These fonts accelerate the action of the bleaching agents upon the enamel surface by heating up the materials. We used the xenon plasma arc lamp and a 960 nm fiber-coupled diode laser to irradiate the two materials containing 35% of hydrogen peroxide (Opus White and Opalescence extra). The color of the teeth was measured with a spectrophotometer using the CIELAB color system that gives the numeric values of L * a * b * . (author)

  9. Chaos control and taming of turbulence in plasma devices

    DEFF Research Database (Denmark)

    Klinger, T.; Schröder, C.; Block, D.

    2001-01-01

    Chaos and turbulence are often considered as troublesome features of plasma devices. In the general framework of nonlinear dynamical systems, a number of strategies have been developed to achieve active control over complex temporal or spatio-temporal behavior. Many of these techniques apply...... to plasma instabilities. In the present paper we discuss recent progress in chaos control and taming of turbulence in three different plasma "model" experiments: (1) Chaotic oscillations in simple plasma diodes, (2) ionization wave turbulence in the positive column of glow discharges, and (3) drift wave...

  10. Sausage instability of Z-discharged plasma channel in LIB-fusion device

    International Nuclear Information System (INIS)

    Murakami, H.; Kawata, S.; Niu, K.

    1982-07-01

    Current-carring plasma channels have been proposed for transporting intense ion beams from diodes to a target in a LIB-fusion device. In this paper, the growth rate of the most dangerous surface mode, that is, axisymmetric sausage instability is examined for the plasma channel. The growth rate is shown to be smaller than that of the plasma channel with no fluid motion in a sharp boundary. It is concluded that the stable plasma channel can be formed. (author)

  11. Light ion source studies with a magnetically insulated extraction diode

    International Nuclear Information System (INIS)

    Struckman, C.K.

    1992-01-01

    Light ion sources are currently being studied to assess their ability to drive an inertial confinement fusion reactor. The author has produced a high purity, 1MV, 300A/cm 2 lithium beam using a 200cm 2 extraction geometry, magnetically insulated ion diode. The lithium source was an AC glow discharge cleaned, LiF/Al film active anode. The active anode plasma was formed after 50KA of current was shunted through the anode film for 20ns. The stoichiometry of the resulting ion beam was 65% Li + , 20% Al +2 , and 15% H + . Without the glow discharge cleaning, the ion beam was over 55% hydrogen and only 20% Li + . At the time of the diode's design, extraction diodes were producing poor ion beams: their current efficiency was only 60-70%, and their extracted ion current was radially nonuniform. This diode was the first high efficiency extraction diode, and produced over 200KA of ions with 80-90% ion current efficiency. In addition, by varying the tilt of the applied magnetic field, it was possible to show that the ion current density could be made independent of radius. Since the author was unable to make a Li + beam with a passive anode, he installed an active anode that used an external current to vaporize a thin metal film on the anode surface. Poor beam purity was the most serious problem with active anodes. In order to remove impurities, especially the hydrogen contamination, the author cleaned the anodes with a glow discharge. Al film anodes were cleaned with a 110mA, 33W DC glow discharge, and the LiF/Al film anodes were cleaned with an equivalent AC discharge. The results obtained and a model for the mechanism behind the cleaning process are throughly discussed

  12. Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yun [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Su, Ping, E-mail: pingsu@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Yang, Zhimei; Ma, Yao [Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gong, Min, E-mail: mgong@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China)

    2016-12-01

    Highlights: • The complex permittivity has been studied on Si PIN irradiated by heavy Kr ions. • DLTS was used to investigate damages formed in PIN diode during irradiation. • The recombination of carriers has important influence on the complex permittivity. - Abstract: The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at E{sub C}-0.31 eV and E{sub C}-0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

  13. Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

    International Nuclear Information System (INIS)

    Li, Yun; Su, Ping; Yang, Zhimei; Ma, Yao; Gong, Min

    2016-01-01

    Highlights: • The complex permittivity has been studied on Si PIN irradiated by heavy Kr ions. • DLTS was used to investigate damages formed in PIN diode during irradiation. • The recombination of carriers has important influence on the complex permittivity. - Abstract: The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at E C -0.31 eV and E C -0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

  14. Long pulse diode experiments

    Science.gov (United States)

    McClenahan, Charles R.; Weber, Gerald J.; Omalley, Martin W.; Stewart, Joseph; Rinehart, Larry F.; Buttram, Malcolm T.

    1990-10-01

    A diode employing a thermionic cathode has produced 80 A beams at 200 kV for at least 6 microseconds. Moreover, the diode operates at rates as high as 1 Hz. EGUN simulations of the experimental geometry agree with the experiments. Finally, simulation of a proposed diode geometry predicts a 1 kA, 500 kV beam.

  15. Influence of generator structure on pinch reflex diode operation for light ion production

    International Nuclear Information System (INIS)

    Bernard, A.; Bourgeois, C.; Camarcat, N.; Tournier, B.

    1983-01-01

    Light ion beams with characteristics 1 MV, 185 kA, 100 ns FWHM have been accelerated in a pinch-reflex diode driven by the SIDONIX II generator pulsed in positive polarity. The diode impedance of 2 ohms remains higher than the water line impedance of 1.3 ohms, and consequently, the ion efficiency is limited to 25%. This effect is attributed to the slow current rise time and fast anode plasma expansion since the machine does not have an intermediate store to reduce the 100 ns FWHM power pulse. Published data on Hydra, Reiden IV, Gamble II A support this hypothesis. Preliminary results of focusing experiments, when the beam is injected into a 1 Torr air cell downstream the cathode, indicate that 60 kA end up on a 3 cm diameter target. These results should be improved by adding an intermediate store to the generator, giving a 1.3 TW, 45 ns FWHM power pulse for 180 kJ of stored energy in the Marx. We expect that the increase in diode electrical power will lead to an increase in total ion current. For GAMBLE II A, 500 kA of light ion are extracted when the diode power reaches 1.4 TW, for equivalent Marx energies

  16. Simultaneous determination of atorvastatin and valsartan in human plasma by solid-based disperser liquid-liquid microextraction followed by high-performance liquid chromatography-diode array detection.

    Science.gov (United States)

    Farajzadeh, Mir Ali; Khorram, Parisa; Pazhohan, Azar

    2016-04-01

    A simple, sensitive, and efficient method has been developed for simultaneous estimation of valsartan and atorvastatin in human plasma by combination of solid-based dispersive liquid-liquid microextraction and high performance liquid chromatography-diode array detection. In the proposed method, 1,2-dibromoethane (extraction solvent) is added on a sugar cube (as a solid disperser) and it is introduced into plasma sample containing the analytes. After manual shaking and centrifugation, the resultant sedimented phase is subjected to back extraction into a small volume of sodium hydrogen carbonate solution using air-assisted liquid-liquid microextraction. Then the cloudy solution is centrifuged and the obtained aqueous phase is transferred into a microtube and analyzed by the separation system. Under the optimal conditions, extraction recoveries are obtained in the range of 81-90%. Calibration curves plotted in drug-free plasma sample are linear in the ranges of 5-5000μgL(-1) for valsartan and 10-5000μgL(-1) for atorvastatin with the coefficients of determination higher than 0.997. Limits of detection and quantification of the studied analytes in plasma sample are 0.30-2.6 and 1.0-8.2μgL(-1), respectively. Intra-day (n=6) and inter-days (n=4) precisions of the method are satisfactory with relative standard deviations less than 7.4% (at three levels of 10, 500, and 2000μgL(-1), each analyte). These data suggest that the method can be successfully applied to determine trace amounts of valsartan and atorvastatin in human plasma samples. Copyright © 2016 Elsevier B.V. All rights reserved.

  17. A newly validated high-performance liquid chromatography method with diode array ultraviolet detection for analysis of the antimalarial drug primaquine in the blood plasma.

    Science.gov (United States)

    Carmo, Ana Paula Barbosa do; Borborema, Manoella; Ribeiro, Stephan; De-Oliveira, Ana Cecilia Xavier; Paumgartten, Francisco Jose Roma; Moreira, Davyson de Lima

    2017-01-01

    Primaquine (PQ) diphosphate is an 8-aminoquinoline antimalarial drug with unique therapeutic properties. It is the only drug that prevents relapses of Plasmodium vivax or Plasmodium ovale infections. In this study, a fast, sensitive, cost-effective, and robust method for the extraction and high-performance liquid chromatography with diode array ultraviolet detection (HPLC-DAD-UV ) analysis of PQ in the blood plasma was developed and validated. After plasma protein precipitation, PQ was obtained by liquid-liquid extraction and analyzed by HPLC-DAD-UV with a modified-silica cyanopropyl column (250mm × 4.6mm i.d. × 5μm) as the stationary phase and a mixture of acetonitrile and 10mM ammonium acetate buffer (pH = 3.80) (45:55) as the mobile phase. The flow rate was 1.0mL·min-1, the oven temperature was 50OC, and absorbance was measured at 264nm. The method was validated for linearity, intra-day and inter-day precision, accuracy, recovery, and robustness. The detection (LOD) and quantification (LOQ) limits were 1.0 and 3.5ng·mL-1, respectively. The method was used to analyze the plasma of female DBA-2 mice treated with 20mg.kg-1 (oral) PQ diphosphate. By combining a simple, low-cost extraction procedure with a sensitive, precise, accurate, and robust method, it was possible to analyze PQ in small volumes of plasma. The new method presents lower LOD and LOQ limits and requires a shorter analysis time and smaller plasma volumes than those of previously reported HPLC methods with DAD-UV detection. The new validated method is suitable for kinetic studies of PQ in small rodents, including mouse models for the study of malaria.

  18. A newly validated high-performance liquid chromatography method with diode array ultraviolet detection for analysis of the antimalarial drug primaquine in the blood plasma

    Directory of Open Access Journals (Sweden)

    Ana Paula Barbosa do Carmo

    Full Text Available Abstract INTRODUCTION: Primaquine (PQ diphosphate is an 8-aminoquinoline antimalarial drug with unique therapeutic properties. It is the only drug that prevents relapses of Plasmodium vivax or Plasmodium ovale infections. In this study, a fast, sensitive, cost-effective, and robust method for the extraction and high-performance liquid chromatography with diode array ultraviolet detection (HPLC-DAD-UV analysis of PQ in the blood plasma was developed and validated. METHODS: After plasma protein precipitation, PQ was obtained by liquid-liquid extraction and analyzed by HPLC-DAD-UV with a modified-silica cyanopropyl column (250mm × 4.6mm i.d. × 5μm as the stationary phase and a mixture of acetonitrile and 10mM ammonium acetate buffer (pH = 3.80 (45:55 as the mobile phase. The flow rate was 1.0mL·min-1, the oven temperature was 50OC, and absorbance was measured at 264nm. The method was validated for linearity, intra-day and inter-day precision, accuracy, recovery, and robustness. The detection (LOD and quantification (LOQ limits were 1.0 and 3.5ng·mL-1, respectively. The method was used to analyze the plasma of female DBA-2 mice treated with 20mg.kg-1 (oral PQ diphosphate. RESULTS: By combining a simple, low-cost extraction procedure with a sensitive, precise, accurate, and robust method, it was possible to analyze PQ in small volumes of plasma. The new method presents lower LOD and LOQ limits and requires a shorter analysis time and smaller plasma volumes than those of previously reported HPLC methods with DAD-UV detection. CONCLUSIONS: The new validated method is suitable for kinetic studies of PQ in small rodents, including mouse models for the study of malaria.

  19. Leakage current of amorphous silicon p-i-n diodes made by ion shower doping

    International Nuclear Information System (INIS)

    Kim, Hee Joon; Cho, Gyuseong; Choi, Joonhoo; Jung, Kwan-Wook

    2002-01-01

    In this letter, we report the leakage current of amorphous silicon (a-Si:H) p-i-n photodiodes, of which the p layer is formed by ion shower doping. The ion shower doping technique has an advantage over plasma-enhanced chemical vapor deposition (PECVD) in the fabrication of a large-area amorphous silicon flat-panel detector. The leakage current of the ion shower diodes shows a better uniformity within a 30 cmx40 cm substrate than that of the PECVD diodes. However, it shows a higher leakage current of 2-3 pA/mm 2 at -5 V. This high current originates from the high injection current at the p-i junction

  20. Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

    Science.gov (United States)

    Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

    2008-11-01

    Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

  1. Countercurrent in high-current microsecond diodes with magnetic insulation

    International Nuclear Information System (INIS)

    Bugaev, S.P.; Kim, A.A.; Koshelev, V.I.

    1979-01-01

    In order to increase the efficiency of the generation of tube electron beams in diodes and the efficiency of the electron beam current pulse duration studied is the formation of the electron counter current in microsecond diodes with magnetic insulation in dependence on the various geometry of the cathode joint. The experiments have been carried out at the accelerator with the following parameters: diode voltage from 400 to 600 kV, the front and duration of the pulse 75 ns and 1-2 μs respectively, beam current from 4 to 17 kA, magnetic field of 18 kGs. The current in the drift tube and the total current of the electron gun have been measured. Distributing resistance current of vacuum insulator has been controlled. Conclusions have been made, that, in the case when the diameters of cathode and cathode holder are equal, the electron current is being produced from the reverse side of cathode plasma, which expands across the magnetic field with the rate of (4-5)x10 5 sm/cs. The counter current value has constituted 15% of the total current at the use of reflector with the geometry repeating the shape of the magnetic field force lines, corresponding to the cathode radius. The counter current has not been present at the use of the flat reflector

  2. Laterally injected light-emitting diode and laser diode

    Science.gov (United States)

    Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

    2015-06-16

    A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

  3. Laser system for measuring small changes in plasma tracer concentrations.

    Science.gov (United States)

    Klaesner, J W; Pou, N A; Parker, R E; Galloway, R L; Roselli, R J

    1996-01-01

    The authors developed a laser-diode system that can be used for on-line optical concentration measurements in physiologic systems. Previous optical systems applied to whole blood have been hampered by artifacts introduced by red blood cells (RBCs). The system introduced here uses a commercially available filter cartridge to separate RBCs from plasma before plasma concentration measurements are made at a single wavelength. The filtering characteristics of the Cellco filter cartridge (#4007-10, German-town, MD) were adequate for use in the on-line measurement system. The response time of the filter cartridge was less than 40 seconds, and the sieving characteristics of the filter for macromolecules were excellent, with filtrate-to-plasma albumin ratios of 0.98 +/- 0.11 for studies in sheep and 0.94 +/- 0.15 for studies in dogs. The 635-nm laser diode system developed was shown to be more sensitive than the spectrophotometer used in previous studies (Klaesner et al., Annals of Biomedical Engineering, 1994; 22, 660-73). The new system was used to measure the product of filtration coefficient (Kfc) and reflection coefficient for albumin (delta f) in an isolated canine lung preparation. The delta fKfc values [mL/(cmH2O.min.100 g dry lung weight)] measured with the laser diode system (0.33 +/- 0.22) compared favorably with the delta fKfc obtained using a spectrophotometer (0.27 +/- 0.20) and with the Kfc obtained using the blood-corrected gravimetric method (0.32 +/- 0.23). Thus, this new optical system was shown to accurately measure plasma concentration changes in whole blood for physiologic levels of Kfc. The same system can be used with different optical tracers and different source wavelengths to make optical plasma concentration measurements for other physiologic applications.

  4. Powering laser diode systems

    CERN Document Server

    Trestman, Grigoriy A

    2017-01-01

    This Tutorial Text discusses the competent design and skilled use of laser diode drivers (LDDs) and power supplies (PSs) for the electrical components of laser diode systems. It is intended to help power-electronic design engineers during the initial design stages: the choice of the best PS topology, the calculation of parameters and components of the PS circuit, and the computer simulation of the circuit. Readers who use laser diode systems for research, production, and other purposes will also benefit. The book will help readers avoid errors when creating laser systems from ready-made blocks, as well as understand the nature of the "mystical failures" of laser diodes (and possibly prevent them).

  5. Coupling of an applied field magnetically insulated ion diode to a high power magnetically insulated transmission line system

    International Nuclear Information System (INIS)

    Maenchen, J.E.

    1983-01-01

    The coupling of energy from a high power pulsed accelerator through a long triplate magnetically insulated transmission line (MITL) in vacuum to an annular applied magnetic field insulated extraction ion diode is examined. The narrow power transport window and the wave front erosion of the MITL set stringent impedance history conditions on the diode load. A new ion diode design developed to satisfy these criteria with marginal electron insulation is presented. The LION accelerator is used to provide a positive polarity 1.5 MV, 350 kA, 40 ns FWHM pulse with a 30 kA/ns current rate from a triplate MITL source. A transition converts the triplate into a cylindrical cross section which flares into the ion diode load. Extensive current and voltage measurements performed along this structure and on the extracted ion beam provide conclusive evidence that the self insulation condition of the MITL is maintained in the transition by current loss alone. The ion diode utilizes a radial magnetic field between a grounded cathode annular emission tip and a disk anode. A 50 cm 2 dielectric/metal anode area serves as the ion plasma source subject to direct electron bombardment from the opposing cathode tip under marginal magnetic insulation conditions. The ions extracted cross the radial magnetic field and exit the diode volume as an annular cross section beam of peak current about 100 kA. The diode current gradually converts from the initial electron flow to nearly 100% ion current after 30 ns, coupling 60% of the diode energy into ions

  6. Preliminary Calculation for Plasma Chamber Design of Pulsed Electron Source Based on Plasma

    International Nuclear Information System (INIS)

    Widdi Usada

    2009-01-01

    This paper described the characteristics of pulsed electron sources with anode-cathode distance of 5 cm, electrode diameter of 10 cm, driven by capacitor energy of 25 J. The preliminary results showed that if the system is operated with diode resistance is 1.6 Ω, plasma resistance is 0.14 Ω, and β is 0.94, the achieved of plasma voltage is 640 V, its current is 4.395 kA with its pulse width of 0.8 μsecond. According to breakdown voltage based on Paschen empirical formula, with this achieved voltage, this system could be operated for operation pressure of 1 torr. (author)

  7. Limitation of the electron emission in an ion diode with magnetic self-insulation

    International Nuclear Information System (INIS)

    Pushkarev, A. I.; Isakova, Yu. I.; Guselnikov, V. I.

    2011-01-01

    The results of a study of the generation of a pulsed ion beam of gigawatt power formed by a diode with an explosive-emission potential electrode in a mode of magnetic self-insulation are presented. The studies were conducted at the TEMP-4M ion accelerator set in double pulse formation mode: the first pulse was negative (300-500 ns and 100-150 kV) and the second, positive (150 ns and 250-300 kV). The ion current density was 20-40 A/cm 2 ; the beam composition was protons and carbon ions. It was shown that plasma is effectively formed over the entire working surface of the graphite potential electrode. During the ion beam generation, a condition of magnetic cutoff of electrons along the entire length of the diode (B/B cr ≥ 4) is fulfilled. Because of the high drift rate, the residence time of the electrons and protons in the anode-cathode gap is 3-5 ns, while for the C + carbon ions, it is more than 8 ns. This denotes low efficiency of magnetic self-insulation in a diode of such a design. At the same time, it has been experimentally observed that, during the generation of ion current (second pulse), the electronic component of the total current is suppressed by a factor of 1.5-2 for a strip diode with plane and focusing geometry. A new model of the effect of limiting the electron emission explaining the decrease in the electronic component of the total current in a diode with magnetic self-insulation is proposed.

  8. Performance of the cold powered diodes and diode leads in the main magnets of the LHC

    CERN Document Server

    Willering, G P; Bajko, M; Bednarek, M; Bottura, L; Charifoulline, Z; Dahlerup-Petersen, K; Dib, G; D'Angelo, G; Gharib, A; Grand-Clement, L; Izquierdo Bermudez, S; Prin, H; Roger, V; Rowan, S; Savary, F; Tock, J-Ph; Verweij, A

    2015-01-01

    During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the co...

  9. Dynamics of a relativistic electron beam in a high-current diode with a knife-edge cathode

    International Nuclear Information System (INIS)

    Babykin, V.M.; Gordeev, A.V.; Golovin, G.T.; Korolev, V.D.; Kopchikov, A.V.; Tulupov, M.V.; Chernenko, A.S.; Shuvaev, V.Yu.

    1991-01-01

    For a number of practical applications, e.g., producing discharges in large volumes in order to pump gas lasers and for short x-ray pulses, it is necessary to generate electron beams in megamp range with electron energies from hundreds of kilovolts to several megavolts. It has been possible to obtain high currents (I ± 1 MA) by using diodes with knife-edge cathodes. Knife-edge diodes have an important advantage over the parapotential type because the ion current in them comprises a relatively small fraction of the total current. This is because the electron path in the accelerating gap of knife-edge diodes is quite short in comparison with that in high-current parapotential diodes. From the point of view of applying ribbon-shaped or narrow electron beams, the important problems are in measuring the current-voltage characteristics of the diodes and determining the dynamics of the energy spectrum and the angular spread of the electrons. The generation of an electron beam with a current ∼130 kA and pulse length ∼60 ns is studied. The current-voltage characteristics of knife-edge diodes with various geometries, the dynamics of the angular spread, and the beam structure are studied. As a result of the study of the REB dynamics it is found that the operation of the diode with these experiments can be approximated by a proposed formula which includes the finite thickness of the knife-edge cathode and the motion of the plasma and ions in the discharge gap. Breaking up of the beam into individual current-carrying channels is observed with the characteristic scale ∼1-2 mm. It is noted that for the diode geometry with a knife-edge cathode, when the magnetic field changes sign and passes through zero, an instability can exist which is analogous to the dissipative tearing instability

  10. Element selective detection of molecular species applying chromatographic techniques and diode laser atomic absorption spectrometry.

    Science.gov (United States)

    Kunze, K; Zybin, A; Koch, J; Franzke, J; Miclea, M; Niemax, K

    2004-12-01

    Tunable diode laser atomic absorption spectroscopy (DLAAS) combined with separation techniques and atomization in plasmas and flames is presented as a powerful method for analysis of molecular species. The analytical figures of merit of the technique are demonstrated by the measurement of Cr(VI) and Mn compounds, as well as molecular species including halogen atoms, hydrogen, carbon and sulfur.

  11. Graphene geometric diodes for terahertz rectennas

    International Nuclear Information System (INIS)

    Zhu Zixu; Joshi, Saumil; Grover, Sachit; Moddel, Garret

    2013-01-01

    We demonstrate a new thin-film graphene diode called a geometric diode that relies on geometric asymmetry to provide rectification at 28 THz. The geometric diode is coupled to an optical antenna to form a rectenna that rectifies incoming radiation. This is the first reported graphene-based antenna-coupled diode working at 28 THz, and potentially at optical frequencies. The planar structure of the geometric diode provides a low RC time constant, on the order of 10 −15 s, required for operation at optical frequencies, and a low impedance for efficient power transfer from the antenna. Fabricated geometric diodes show asymmetric current–voltage characteristics consistent with Monte Carlo simulations for the devices. Rectennas employing the geometric diode coupled to metal and graphene antennas rectify 10.6 µm radiation, corresponding to an operating frequency of 28 THz. The graphene bowtie antenna is the first demonstrated functional antenna made using graphene. Its response indicates that graphene is a suitable terahertz resonator material. Applications for this terahertz diode include terahertz-wave and optical detection, ultra-high-speed electronics and optical power conversion. (paper)

  12. Exploding metal film active anode source experiments on the LION extractor ion diode

    International Nuclear Information System (INIS)

    Rondeau, G.D.; Bordonaro, G.J.; Greenly, J.B.; Hammer, D.A.

    1989-01-01

    In this paper the authors report results using an extractor geometry magnetically insulated ion diode on the 0.5 TW LION accelerator. Experiments with an exploding metal film active anode plasma source (EMFAAPS) have shown that intense beams with significantly improved turn-on time compared to epoxy-filled-groove anodes can be produced. A new geometry, in which a plasma switch is used to provide the current path that explodes the thin film anode, has improved the ion efficiency (to typically 70%) compared with the previous scheme in which an electron collector on the anode provided this current. Leakage electron current is reduced when no collector is used

  13. Characterization of the rod-pinch diode at 2 to 4 Mv as a high-resolution source for flash radiography

    International Nuclear Information System (INIS)

    Commisso, R.J.; Allen, R.J.; Cooperstein, G.; Mosher, D.; Young, F.C.; Boller, J.R.; Swanekamp, S.B.; Bayol, F.; Charre, P.; Garrigues, A.; Gonzales, C.; Pompier, F.; Vezinet, R.

    2002-01-01

    The ASTERIX generator is used to evaluatate the rod-pinch electron-beam diode as an intense source of x-rays for high-resolution, pulsed (30- to 40-ns FWHM) radiography at peak diode voltages of voltages of 2.4 to 4.4 MV and peak diode currents of 55 to 135 kA. At 4 MV, tungsten anode rods of 1-mm or 2-mm diameter produce on-axis doses at 1 meter of 16 rad(Si) or 20 rad(Si), respectively. The on-axis source diameter based on the full-width at half-maximum (FWHM) of the line-spread-function (LSF) is 0.9 ± 0.1 mm for a 1-mm diameter rod and 1.4 ± 0.1 mm for a 2-mm diam rod, independent of voltage. The LANL source diameter is nearly twice the FWHM. The measured rod-pinch current is reproduced with a diode model that includes ions and accounts for anode and cathode plasma expansion. A composite diode with a large diameter carbon-rod anode followed by a smaller-diameter tungsten-tip converter shows promise for applications where a small central source feature is desired

  14. On the non-linear dynamics of potential relaxation oscillations in bounded plasmas

    International Nuclear Information System (INIS)

    Krssak, M.; Skalny, J.D.; Gyergyek, T.; Cercek, M.

    2007-01-01

    Plasma in a 1-dimensional diode is studied theoretically and the computer simulations are used for verification of the theoretical model. When collector in the diode is biased positively, a double-layer is created in the system and consequently, we are able to observe oscillations of the potential, density and other plasma parameters. When external periodic forcing is applied, spectra of these oscillations are changed and effects of synchronisation and periodic pulling can be observed. Both of these effects are of non-linear nature and a good explanation is found using the analogy with Van der Pol oscillators. Following [1] and [2] approximate analytical solutions are found and then compared with computer simulations obtained using a 1-dimensional particle-in-cell code XPDP1. (author)

  15. Adiabatic plasma buncher

    Energy Technology Data Exchange (ETDEWEB)

    Ferrario, M. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Frascati, Frascati, RM (Italy); Katsouleas, T.C. [Los Angeles Univ. of Southern California, Los Angeles, CA (United States); Serafini, L. [Istituto Nazionale di Fisica Nucleare, Milan (Italy); Ben Zvi, I. [Brookhaven National Laboratory, Upton, NY (United States)

    2000-07-01

    In this paper is presented a new scheme of injection into a plasma accelerator, aimed at producing a high quality beam while relaxing the demands on the bunch length of the injected beam. The beam dynamics in the injector, consisting of a high voltage pulsed photo-diode, is analyzed and optimized to produce a {lambda}{sub p}/20 long electron bunch at 2.5 MeV. This bunch is injected into a plasma wave in which it compresses down to {lambda}{sub p}/100 while simultaneously accelerating up to 250 MeV. This simultaneous bunching and acceleration of a high quality beam requires a proper combination of injection energy and injection phase. Preliminary results from simulations are shown to assess the potentials of the scheme.

  16. Highly ionized copper contribution to the soft X-ray emission in a plasma focus device

    Energy Technology Data Exchange (ETDEWEB)

    Zoita, V; Patran, A [Inst. of Physics and Technology of Radiation Devices, Bucharest (Romania); Larour, J [Ecole Polytechnique, Palaiseau (France). Lab. de Physique des Milieux Ionises

    1997-12-31

    In order to discriminate between the contributions of the gas plasma and of the anode (solid or plasma) to the soft X-ray emission in a plasma focus device, a series of experiments was carried out using the following combinations of experimental conditions: various gases, different absorption filters and viewing different regions in front of the centre electrode. The experiments were performed on the IPF-2/20 plasma focus device using the following working gases: helium, neon and helium-argon mixtures. The diagnostics used: magnetic probe for current derivative, PIN diode for the minimum pinch radius detection, PIN diodes for the soft X-ray emission, scintillator-photomultiplier detector for the hard X-ray emission. From the analysis of the various diagnostics data recorded with very good time correlation, it followed that the soft K-ray signals had a strong contribution from optical transitions of the highly ionised Cu (Cu XX to XXII) emitting in the range 0.8-1.3 nm. (author). 7 figs., 9 refs.

  17. Tunable diode-pumped-LNA laser

    International Nuclear Information System (INIS)

    Cassimi, A.; Hardy, V.; Hamel, J.; Leduc, M.

    1987-01-01

    Diode-pumped crystals provided recently new compact laser devices. We report the first end pumping of a La x Nd 1-x MgAl 11 O 19 (LNA) crystal using a 200mW diode array (Spectra Diode Lab). We also report the first results obtained with a 1mW diode (SONY). This C.W. laser can be tuned from 1.048μm to 1.086μm. Without selective elements in the cavity, the laser emits around 1.054μm with a threshold of 24mW and a slope efficiency of 4.4% (output mirror of transmission T = 1%) when pumped by the diode array. With the selective elements, the threshold increases to 100mW and we obtain a power of 4mW for a pump power of 200mW

  18. X-ray diodes for laser fusion plasma diagnostics

    International Nuclear Information System (INIS)

    Day, R.H.; Lee, P.; Saloman, E.B.; Nagel, D.J.

    1981-02-01

    Photodiodes with x-ray sensitive photocathodes are commonly used as broadband x-ray detectors in fusion plasma diagnostics. We have measured the risetime of the detector system and have measured the quantum efficiency between 1 to 500 A of numerous photocathode materials of practical interest. The materials studied include aluminum, copper, nickel, gold, three forms of carbon, chromium, and cesium iodide. The results of the measurements are compared with Henke's semiempirical model of photoyield. We have studied the effects of long-term cathode aging and use as a plasma diagnostic on cathode quantum efficiency. In addition, we have measured the x-ray mass-absorption coefficient of several ultrasoft x-ray windows in energy regions where data were unavailable. Windows studied were made of aluminum, Formvar, polypropylene, and Kimfoil. Measurements between 1 to 50 A were performed with the Los Alamos Scientific Laboratory's low-energy x-ray calibration facility, and the measurements between 50 to 550 A were performed at the National Bureau of Standard's synchrotron ultraviolet radiation facility

  19. Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

    Energy Technology Data Exchange (ETDEWEB)

    Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

    2000-04-01

    Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

  20. The determination of the electron collision cross sections for the momentum transfer in potassium by measuring the DC conductivity of a plasma

    International Nuclear Information System (INIS)

    Luknarova, M.; Veis, S.

    1976-01-01

    The DC conductivity of a thermally produced plasma in a plasma diode has been measured in pure potassium vapour. The plasma diode consists of two tungsten electrodes heated to a temperature of 2200 K. A simple theory for determining the influence of the plasma sheaths on the measured conductivity was developed and experimental conditions were established under which the potential drops across the sheaths could be neglected. By measuring the DC conductivity of the plasma at temperatures ranging from 1250 to 1600 K the potassium momentum-transfer cross section has been obtained. The measured cross section (2.37 +- 0.24) x 10 -14 cm 2 at 1500 K is in good agreement with results of other workers. Results for the work function of tungsten in potassium vapour were also obtained. (author)

  1. Effect of radiofrequency on capacitance of low density plasma sheath

    International Nuclear Information System (INIS)

    Carneiro, L.T.; Cunha Rapozo, C. da

    1988-01-01

    It is shown that the influence of induced radiofrequency potential (V RF ) modifies the Bohm theory on ion saturation current, measured with Langmuir probes. The effect of radiofrequency potential on diode type plasma sheath resonance is also investigated. (M.C.K.)

  2. Vortex diode jet

    Science.gov (United States)

    Houck, Edward D.

    1994-01-01

    A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.

  3. Laser Diode Beam Basics, Manipulations and Characterizations

    CERN Document Server

    Sun, Haiyin

    2012-01-01

    Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

  4. Boundary conditions on the plasma emitter surface in the presence of a particle counter flow: I. Ion emitter

    Energy Technology Data Exchange (ETDEWEB)

    Astrelin, V. T., E-mail: V.T.Astrelin@inp.nsk.su; Kotelnikov, I. A. [Russian Academy of Sciences, Budker Institute of Nuclear Physics, Siberian Branch (Russian Federation)

    2017-02-15

    Emission of positively charged ions from a plasma emitter irradiated by a counterpropagating electron beam is studied theoretically. A bipolar diode with a plasma emitter in which the ion temperature is lower than the electron temperature and the counter electron flow is extracted from the ion collector is calculated in the one-dimensional model. An analog of Bohm’s criterion for ion emission in the presence of a counterpropagating electron beam is derived. The limiting density of the counterpropagating beam in a bipolar diode operating in the space-charge-limited-emission regime is calculated. The full set of boundary conditions on the plasma emitter surface that are required for operation of the high-current optics module in numerical codes used to simulate charged particle sources is formulated.

  5. Operation and maintenance manual for diode performance analysis program DIODE0

    International Nuclear Information System (INIS)

    Boyer, W.B.

    1977-03-01

    This program computes diode performance parameters for the e beam fusion accelerators HYDRA, PROTO I and PROTO II. The program works in conjunction with other programs in the data acquisition facility library. It reads the input data produced by the Tekronix R7012 Transient Digitizers off the disc. It then computes and plots the diode corrected voltages, impedances, powers, and energies

  6. The classical Pierce diode: Using particle simulations on linear and nonlinear behavior and final states

    International Nuclear Information System (INIS)

    Crystal, T.L.; Kuhn, S.; Birdsall, C.K.

    1984-01-01

    The classical Pierce diode is a simple 1-d system of two shorted metal plates, a cold beam of electrons injected from one side and a neutralizing background of rigid ions. While the plasma medium is technically stable, the finiteness of the Pierce system allows stable and unstable operation. It is usefully studied as an archetypical bounded plasma system, related e.g., to Q-machines, particle accelerators, thermionic converters. New particle simulations of the Pierce diode have successfully recovered many novel linear phenomena including the dominant linear eigenmodes (seen in the internal electrostatic fields), and the dominant and subdominant eigenfrequencies, (seen both in the internal electrostatics and in the external circuit current, J/sub ext/(t)). These simulation results conform very well to detailed predictions of a new linear analysis. The final (nonlinear) state recovered can show critical dependence on initial (linear perturbation) conditions, and can be made steady-state (d.c.) or periodic-oscillatory by simply changing the initial conditions by a factor of 10/sup -4/ or less. A third class of final state is also possible which has oscillations which seem to be nonperiodic

  7. Spectroscopic studies of pulsed-power plasmas

    International Nuclear Information System (INIS)

    Maron, Y.; Arad, R.; Dadusc, G.; Davara, G.; Duvall, R.E.; Fisher, V.; Foord, M.E.; Fruchtman, A.; Gregorian, L.; Krasik, Ya.

    1993-01-01

    Recently developed spectroscopic diagnostic techniques are used to investigate the plasma behavior in a Magnetically Insulated Ion Diode, a Plasma Opening Switch, and a gas-puffed Z-pinch. Measurements with relatively high spectral, temporal, and spatial resolutions are performed. The particle velocity and density distributions within a few tens of microns from the dielectric-anode surface are observed using laser spectroscopy. Collective fluctuating electric fields in the plasma are inferred from anisotropic Stark broadening. For the Plasma Opening Switch experiment, a novel gaseous plasma source was developed which is mounted inside the high-voltage inner conductor. The properties of this source, together with spectroscopic observations of the electron density and particle velocities of the injected plasma, are described. Emission line intensities and spectral profiles give the electron kinetic energies during the switch operation and the ion velocity distributions. Secondary plasma ejection from the electrodes is also studied. In the Z-pinch experiment, spectral emission-line profiles are studied during the implosion phase. Doppler line shifts and widths yield the radial velocity distributions for various charge states in various regions of the plasma. Effects of plasma ejection from the cathode are also studied

  8. Laser diode package with enhanced cooling

    Science.gov (United States)

    Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA

    2011-09-13

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  9. High power diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Solarz, R.; Albrecht, G.; Beach, R.; Comaskey, B.

    1992-01-01

    Although operational for over twenty years, diode pumped solid state lasers have, for most of their existence, been limited to individual diodes pumping a tiny volume of active medium in an end pumped configuration. More recent years have witnessed the appearance of diode bars, packing around 100 diodes in a 1 cm bar which have enabled end and side pumped small solid state lasers at the few Watt level of output. This paper describes the subsequent development of how proper cooling and stacking of bars enables the fabrication of multi kill average power diode pump arrays with irradiances of 1 kw/cm peak and 250 W/cm 2 average pump power. Since typical conversion efficiencies from the diode light to the pumped laser output light are of order 30% or more, kW average power diode pumped solid state lasers now are possible

  10. Powerful infrared emitting diodes

    Directory of Open Access Journals (Sweden)

    Kogan L. M.

    2012-02-01

    Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

  11. X radiation diagnostics of high-temperature laser plasma

    International Nuclear Information System (INIS)

    Marsak, Z.; Bryknar, Z.; Legova, S.; Pina, L.

    1980-01-01

    Main aspects of X-ray emission from plasma heated by a pulsed laser and methods of its detection are presented, especially using a pinhole camera and a multichannel spectrometer with p-i-n diodes and Be-filters for measurement in the energy range 0.5 keV to 3 keV. (author)

  12. Manufacture of axially insulated large-area diodes

    International Nuclear Information System (INIS)

    Ma Weiyi; Zhou Kungang; Wang Youtian; Zhang Dong; Shan Yusheng; Wang Naiyan

    1999-01-01

    The author describes the design and construction of the axially insulated large-area diodes used in the 'Heaven-1'. The four axially insulated large-area diodes are connected to the 10 ohm pulse transmission lines via the vacuum feed through tubes. The experimental results with the diodes are given. The diodes can steadily work at the voltage of 650 kV, and the diode current density is about 80 A per cm 2 with a pulse width of 220 ns. The electron beams with a total energy of 25 kJ are obtained

  13. Coupling Phenomenon in Diode with Dielectric Gridded Cathode

    International Nuclear Information System (INIS)

    Lahav, A.; Berezovsky, V.; Schachter, L.

    1999-01-01

    We investigated the current characteristic in a vacuum diode with a Gridded cathode. The grid is located on a top of a Ferro - Electric disk with a uniform cathode on its back side. We found experimental evidence that the current in such a system exceeds Child - Langmuir limit, in agreement with results reported in [1]. Explanations to this phenomenon were given in term of the non-linear characteristic of the ferro - electric ceramic or by plasma-assisted emission and gap closure. Recently [2] it has been shown theoretically that electrostatic coupling between the dielectric disk and the vacuum gap is directly responsible to the excess of current. We shall report experimental results that may support this possibility

  14. Enhanced vbasis laser diode package

    Science.gov (United States)

    Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

    2014-08-19

    A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

  15. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  16. Diode lasers: From laboratory to industry

    Science.gov (United States)

    Nasim, Hira; Jamil, Yasir

    2014-03-01

    The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

  17. Studies of cold protection diodes

    International Nuclear Information System (INIS)

    Carcagno, R.; Zeigler, J.

    1990-01-01

    The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current IV measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 14 refs., 8 figs., 2 tabs

  18. Studies of cold protection diodes

    International Nuclear Information System (INIS)

    Carcagno, R.; Zeigler, J.

    1990-03-01

    The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current 4 measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 11 refs., 8 figs., 2 tabs

  19. Spin-current diode with a ferromagnetic semiconductor

    International Nuclear Information System (INIS)

    Sun, Qing-Feng; Xie, X. C.

    2015-01-01

    Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here, we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current diode does in electronics

  20. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  1. Multilayer mirror and foil filter AXUV diode arrays on CDX-U spherical torus

    International Nuclear Information System (INIS)

    Soukhanovskii, V. A.; Stutman, D.; Iovea, M.; Finkenthal, M.; Moos, H. W.; Munsat, T.; Jones, B.; Hoffman, D.; Kaita, R.; Majeski, R.

    2001-01-01

    Recent upgrades to CDX-U spherical torus diagnostics include two 10-channel AXUV diode arrays. The multilayer mirror (MLM) array measures the λ150 O VI brightness profile in the poloidal plane using the Mo/B 4 C synthetic multilayer structures as dispersive elements. The foil filter array has a tangential view and is equipped with interchangeable clear aperture, beryllium and titanium filters. This allows measurements of radiated power, O VI or C V radial distributions, respectively. The O VI and C V emissivity and the radiated power profiles are highly peaked. A Neoclassical impurity accumulation mechanism is considered as an explanation. For radiated power measurements in the T e ≤100 eV plasmas, photon energy dependent corrections must be used in order to account for nonlinear AXUV sensitivity in the range E phot ≤20 eV. The arrays are also used for characterization of resistive MHD phenomena, such as the low m modes, saw-tooth oscillations and internal reconnection events. Based on the successful operation of the diagnostics, a new ultra soft x-ray multilayer mirror diode AXUV diode array monitoring the 34 Aa emissivity distribution of C VI will be built and installed on the National Spherical Torus Experiment

  2. Sensitive determination of three aconitum alkaloids and their metabolites in human plasma by matrix solid-phase dispersion with vortex-assisted dispersive liquid-liquid microextraction and HPLC with diode array detection.

    Science.gov (United States)

    Wang, Xiaozhong; Li, Xuwen; Li, Lanjie; Li, Min; Liu, Ying; Wu, Qian; Li, Peng; Jin, Yongri

    2016-05-01

    A simple and sensitive method for determination of three aconitum alkaloids and their metabolites in human plasma was developed using matrix solid-phase dispersion combined with vortex-assisted dispersive liquid-liquid microextraction and high-performance liquid chromatography with diode array detection. The plasma sample was directly purified by matrix solid-phase dispersion and the eluate obtained was concentrated and further clarified by vortex-assisted dispersive liquid-liquid microextraction. Some important parameters affecting the extraction efficiency, such as type and amount of dispersing sorbent, type and volume of elution solvent, type and volume of extraction solvent, salt concentration as well as sample solution pH, were investigated in detail. Under optimal conditions, the proposed method has good repeatability and reproducibility with intraday and interday relative standard deviations lower than 5.44 and 5.75%, respectively. The recoveries of the aconitum alkaloids ranged from 73.81 to 101.82%, and the detection limits were achieved within the range of 1.6-2.1 ng/mL. The proposed method offered the advantages of good applicability, sensitivity, simplicity, and feasibility, which makes it suitable for the determination of trace amounts of aconitum alkaloids in human plasma samples. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Focusing experiments with light ion diodes

    International Nuclear Information System (INIS)

    Johnson, D.L.

    1978-01-01

    A review of recent experimental and theoretical work at Sandia Laboratories on magnetically insulated single stage ion diodes for inertial confinement fusion experiments is presented. The production, focusing, and numerical simulation of a 0.5 TW annular proton beam using the Proto I dual transmission line generator is described. The modular magnetically insulated ion diode for the Hydra generator is also described along with recent experimental results. A brief description of how an array of modular diodes similar to the Hydra magnetically insulated diode could be used on the EBFA I generator for breakeven fusion experiments is presented

  4. Thermodynamic analysis of acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures

    International Nuclear Information System (INIS)

    Das, Subhashis; Majumdar, Shubhankar; Kumar, Rahul; Ghosh, Saptarsi; Biswas, Dhrubes

    2016-01-01

    An AlGaN/GaN heterostructure based metal–semiconductor–metal symmetrically bi-directional Schottky diode sensor structure has been employed to investigate acetone sensing and to analyze thermodynamics of acetone adsorption at low temperatures. The AlGaN/GaN heterostructure has been grown by plasma-assisted molecular beam epitaxy on Si (111). Schottky diode parameters at different temperatures and acetone concentrations have been extracted from I–V characteristics. Sensitivity and change in Schottky barrier height have been studied. Optimum operating temperature has been established. Coverage of acetone adsorption sites at the AlGaN surface and the effective equilibrium rate constant of acetone adsorption have been explored to determine the endothermic nature of acetone adsorption enthalpy.

  5. Quaternary InGaAsSb Thermophotovoltaic Diodes

    International Nuclear Information System (INIS)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-01-01

    In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV = 19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950 C, diode temperature of T diode = 27 C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV = 28% and PD = 0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects

  6. Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

    Science.gov (United States)

    Jaya, T. P.; Pradyumnan, P. P.

    2017-12-01

    Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

  7. Low-cost 420nm blue laser diode for tissue cutting and hemostasis

    Science.gov (United States)

    Linden, Kurt J.

    2016-03-01

    This paper describes the use of a 420 nm blue laser diode for possible surgery and hemostasis. The optical absorption of blood-containing tissue is strongly determined by the absorption characteristics of blood. Blood is primarily comprised of plasma (yellowish extracellular fluid that is approximately 95% water by volume) and formed elements: red blood cells (RBCs), white blood cells (WBCs) and platelets. The RBCs (hemoglobin) are the most numerous, and due to the spectral absorption characteristics of hemoglobin, the optical absorption of blood has a strong relative maximum value in the 420 nm blue region of the optical spectrum. Small, low-cost laser diodes emitting at 420 nm with tens of watts of continuous wave (CW) optical power are becoming commercially available. Experiments on the use of such laser diodes for tissue cutting with simultaneous hemostasis were carried out and are here described. It was found that 1 mm deep x 1 mm wide cuts can be achieved in red meat at a focused laser power level of 3 W moving at a velocity of ~ 1 mm/s. The peripheral necrosis and thermal damage zone extended over a width of approximately 0.5 mm adjacent to the cuts. Preliminary hemostasis experiments were carried out with fresh equine blood in Tygon tubing, where it was demonstrated that cauterization can occur in regions of intentional partial tubing puncture.

  8. Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

    Science.gov (United States)

    Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

    2018-03-01

    The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.

  9. Atomic spectroscopy with diode lasers

    International Nuclear Information System (INIS)

    Tino, G.M.

    1994-01-01

    Some applications of semiconductor diode lasers in atomic spectroscopy are discussed by describing different experiments performed with lasers emitting in the visible and in the near-infrared region. I illustrate the results obtained in the investigation of near-infrared transitions of atomic oxygen and of the visible intercombination line of strontium. I also describe how two offset-frequency-locked diode lasers can be used to excite velocity selective Raman transitions in Cs. I discuss the spectral resolution, the accuracy of frequency measurements, and the detection sensitivity achievable with diode lasers. (orig.)

  10. Ion beam enhancement in magnetically insulated ion diodes for high-intensity pulsed ion beam generation in non-relativistic mode

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, X. P. [Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Zhang, Z. C.; Lei, M. K., E-mail: surfeng@dlut.edu.cn [Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Pushkarev, A. I. [Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024 (China); Laboratory of Beam and Plasma Technology, High Technologies Physics Institute, Tomsk Polytechnic University, 30, Lenin Ave, 634050 Tomsk (Russian Federation)

    2016-01-15

    High-intensity pulsed ion beam (HIPIB) with ion current density above Child-Langmuir limit is achieved by extracting ion beam from anode plasma of ion diodes with suppressing electron flow under magnetic field insulation. It was theoretically estimated that with increasing the magnetic field, a maximal value of ion current density may reach nearly 3 times that of Child-Langmuir limit in a non-relativistic mode and close to 6 times in a highly relativistic mode. In this study, the behavior of ion beam enhancement by magnetic insulation is systematically investigated in three types of magnetically insulated ion diodes (MIDs) with passive anode, taking into account the anode plasma generation process on the anode surface. A maximal enhancement factor higher than 6 over the Child-Langmuir limit can be obtained in the non-relativistic mode with accelerating voltage of 200–300 kV. The MIDs differ in two anode plasma formation mechanisms, i.e., surface flashover of a dielectric coating on the anode and explosive emission of electrons from the anode, as well as in two insulation modes of external-magnetic field and self-magnetic field with either non-closed or closed drift of electrons in the anode-cathode (A-K) gap, respectively. Combined with ion current density measurement, energy density characterization is employed to resolve the spatial distribution of energy density before focusing for exploring the ion beam generation process. Consistent results are obtained on three types of MIDs concerning control of neutralizing electron flows for the space charge of ions where the high ion beam enhancement is determined by effective electron neutralization in the A-K gap, while the HIPIB composition of different ion species downstream from the diode may be considerably affected by the ion beam neutralization during propagation.

  11. Thermometric characteristics of silicon semiconductor diodes

    International Nuclear Information System (INIS)

    Bezverkhnyaya, N.S.; Vasil'ev, L.M.; Dmitrevskij, Yu.P.; Mel'nik, Yu.M.

    1975-01-01

    To substantiate the feasibility of using silicon diodes made by the Soviet industry as detectors of temperature in the 15 - 300 K range, 25 different types of silicon diodes have been investigated. The results obtained for the thermometric characteristics of the diodes are presented in tabular form. It is shown that a stability of readings of up to 0.05 deg can be obtained [ru

  12. Computer simulation of bounded plasmas

    International Nuclear Information System (INIS)

    Lawson, W.S.

    1987-01-01

    The problems of simulating a one-dimensional bounded plasma system using particles in a gridded space are systematically explored and solutions to them are given. Such problems include the injection of particles at the boundaries, the solution of Poisson's equation, and the inclusion of an external circuit between the confining boundaries. A recently discovered artificial cooling effect is explained as being a side-effect of quiet injection, and its potential for causing serious but subtle errors in bounded simulation is noted. The methods described in the first part of the thesis are then applied to the simulation of an extension of the Pierce diode problem, specifically a Pierce diode modified by an external circuit between the electrodes. The results of these simulations agree to high accuracy with theory when a theory exists, and also show some interesting chaotic behavior in certain parameter regimes. The chaotic behavior is described in detail

  13. Experimental study of a diod with magnetic insulation at the pulse duration more or equal to 10-5 s

    International Nuclear Information System (INIS)

    Rojfe, I.M.; Burtsev, V.A.; Vasilevskij, M.A.; Ehngel'ko, V.I.

    1980-01-01

    Results of the experimental investigation of a heavy-current diod with magnetic insulation are presented. Diod characteristics dependence on magnetic field distribution and magnitude in the accelerating interval has been studied. It is noted that the magnetic insulation of the accelerating tube has permitted to obtain the pulse duration of > or approximately 10 sub(s)sup(-5) at the voltage of > or approximately 400 kV in the tube and electron beam current of 3-4 kA. Maximum insulating magnetic field is 2.5 kOe. It is shown that the pulse duration of electron current in diods with magnetic insulation is limitted by break-down development along the accelerating tube surface. When magnetic field on the cathode is approximately 5kOe thre is a time interval of 4-5μs when the impedance is constant. The difference of diod impedance behaviour in time in these two cases are defined by a distinct expansion of cathode plasma at low magnetic fields. Cathode lateral surface plays a significant role in the process of plasma expantion. When the interelectrode gap is 3-5 cm and the voltage amplitude - < or approximately 400 kV it is possible to obtain tubular electron beams with the pulse duration of 10-15 μs, beam energy of 5-6 kJat a relatively small (approximately equal to 5kOe) magnitudes of magnetic field on the cathode. A possibility is shown to use multipoint graphite cathodes with a large area for obtaining tubular beams. The tubular electron beam of approximately equal to 400 A with the pulse duration of 25 μs have been obtained in the first experiments with such cathode at the voltage amplitude of < or approximately 150 kV. The conclusion is made that the tube magnetic isolation permits to increase considerably the pulse duration

  14. Characteristics of magnetically insulated diode in a multi-shot operation

    Energy Technology Data Exchange (ETDEWEB)

    Chishiro, E; Masugata, K; Yatsui, K [Nagaoka Univ. of Technology (Japan). Laboratory of Beam Technology

    1997-12-31

    The beam characteristics in a multi-shot operation were evaluated. The MID utilized in the experiment is a racetrack type diode, where flat anode and cathode electrodes are utilized. On the anode, a polyethylene sheet of 1 mm thickness is attached as an ion source. The MID is successively operated without breaking the vacuum. An ion current density (J{sub i}) of 350 A/cm{sup 2} is observed at the first shot when the diode gap is 5 mm. The value decreases with increasing number of shots and at the 7th shot, J{sub i} is less than 150 A/cm{sup 2}. After 7 shots, the anode surface is inspected and found to be covered with stuck matter of metallic materials such as Zn, Al, Fe, Cu. These materials seem to be produced by the ablation of the MID electrode. By eliminating the stuck matter from the surface, J{sub i} is recovered to the initial value. The decrease in J{sub i} is due to the fact that the anode is covered with the stuck matter, which prevents the growth of anode plasma. (author). 6 figs., 8 refs.

  15. Axial motion of collector plasma in a relativistic backward wave oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Renzhen; Chen, Changhua; Deng, Yuqun; Cao, Yibing; Sun, Jun; Li, Jiawei [Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi' an 710024 (China)

    2016-06-15

    In this paper, it is proposed that plasma formed at the collector may drift back to the cathode and cause pulse shortening of the relativistic backward wave oscillator. Theoretical analysis shows that the axial drift velocity of plasma ions can be up to 5 mm/ns due to the presence of space charge potential provided by an intense relativistic electron beam. Particle-in-cell simulations indicate that the plasma electrons are initially trapped around the collector surface. With the accumulation of the plasma ions, a large electrostatic field forms and drives the plasma electrons to overcome the space charge potential and enter the beam-wave interaction region along the magnetic field lines. As a result, the beam current modulation is disturbed and the output microwave power falls rapidly. The plasma ions move in the beam-wave interaction region with an average axial velocity of 5–8 mm/ns. After the plasma ions reach the diode region, the emitted current at the cathode rises due to the charge neutralizations by the ions. The impedance collapse leads to further decrease of the microwave power. In experiments, when the diode voltage and beam current were 850 kV and 9.2 kA, and the collector radius was 2.15 cm, the output microwave power was 2.4 GW with a pulse width of less than 20 ns. The ion drift velocity was estimated to be about 5 mm/ns. After an improved collector with 3.35 cm radius was adopted, the pulse width was prolonged to more than 30 ns.

  16. Measurements of the Backstreaming Proton IONS in the Self-Magnetic Pinch (SMP) Diode Utilizing Copper Activation Technique

    Science.gov (United States)

    Mazarakis, Michael; Cuneo, Michael; Fournier, Sean; Johnston, Mark; Kiefer, Mark; Leckbee, Joshua; Simpson, Sean; Renk, Timothy; Webb, Timothy; Bennett, Nichelle

    2016-10-01

    The results presented here were obtained with an SMP diode mounted at the front high voltage end of the 8-10-MV RITS Self-Magnetically Insulated Transmission Line (MITL) voltage adder. Our experiments had two objectives: first, to measure the contribution of the back-streaming proton currents emitted from the anode target, and second, to evaluate the energy of those ions and hence the actual Anode-Cathode (A-K) gap voltage. The accelerating voltage quoted in the literature is estimated utilizing para-potential flow theories. Thus, it is interesting to have another independent measurement of the A-K voltage. We have measured the back-streaming protons emitted from the anode and propagating through a hollow cathode tip for various diode configurations and different techniques of target cleaning treatment, namely, heating at very high temperatures with DC and pulsed current, with RF plasma cleaning, and with both plasma cleaning and heating. We have also evaluated the A-K gap voltage by energy filtering techniques. Sandia is operated by Sandia Corporation, a subsidiary of Lockheed Martin Company, for the US DOE NNSA under Contract No. DE-AC04-94AL85000.

  17. Characterization of X-ray emission from laser generated plasma

    Science.gov (United States)

    Cannavò, Antonino; Torrisi, Lorenzo; Ceccio, Giovanni; Cutroneo, Mariapompea; Calcagno, Lucia; Sciuto, Antonella; Mazzillo, Massimo

    2018-01-01

    X-ray emission from laser generated plasma was studied at low (1010 W/cm2) and high (1018 W/cm2) intensity using ns and fs laser, respectively. Plasma characteristics were controlled trough the laser parameters, the irradiation conditions and the target properties. The X-ray spectra were acquired using fast detection technique based on SiC diodes with different active regions. The X-ray yield increases with the atomic number of the target, both at low and high intensity, and a similar empirical law has been obtained. The X-ray emission mechanisms from plasma are correlated to the plasma temperature and density and to the Coulomb charge particle acceleration, due to the charge separation effects produced in the non-equilibrium plasma. Functional dependences, theoretical approaches and interpretation of possible mechanism will be presented and discussed.

  18. Characterization of X-ray emission from laser generated plasma

    Directory of Open Access Journals (Sweden)

    Cannavò Antonino

    2018-01-01

    Full Text Available X-ray emission from laser generated plasma was studied at low (1010 W/cm2 and high (1018 W/cm2 intensity using ns and fs laser, respectively. Plasma characteristics were controlled trough the laser parameters, the irradiation conditions and the target properties. The X-ray spectra were acquired using fast detection technique based on SiC diodes with different active regions. The X-ray yield increases with the atomic number of the target, both at low and high intensity, and a similar empirical law has been obtained. The X-ray emission mechanisms from plasma are correlated to the plasma temperature and density and to the Coulomb charge particle acceleration, due to the charge separation effects produced in the non-equilibrium plasma. Functional dependences, theoretical approaches and interpretation of possible mechanism will be presented and discussed.

  19. Respiratory complications after diode-laser-assisted tonsillotomy.

    Science.gov (United States)

    Fischer, Miloš; Horn, Iris-Susanne; Quante, Mirja; Merkenschlager, Andreas; Schnoor, Jörg; Kaisers, Udo X; Dietz, Andreas; Kluba, Karsten

    2014-08-01

    Children with certain risk factors, such as comorbidities or severe obstructive sleep apnea syndrome (OSAS) are known to require extended postoperative monitoring after adenotonsillectomy. However, there are no recommendations available for diode-laser-assisted tonsillotomy. A retrospective chart review of 96 children who underwent diode-laser-assisted tonsillotomy (07/2011-06/2013) was performed. Data for general and sleep apnea history, power of the applied diode-laser (λ = 940 nm), anesthesia parameters, the presence of postoperative respiratory complications and postoperative healing were evaluated. After initially uncomplicated diode-laser-assisted tonsillotomy, an adjustment of post-anesthesia care was necessary in 16 of 96 patients due to respiratory failure. Respiratory complications were more frequent in younger children (3.1 vs. 4.0 years, p = 0.049, 95 % CI -1.7952 to -0.0048) and in children who suffered from nocturnal apneas (OR = 5.00, p diode-laser power higher than 13 W could be identified as a risk factor for the occurrence of a postoperative oropharyngeal edema (OR = 3.45, p diode-laser-assisted tonsillotomy. We recommend a reduced diode-laser power (<13 W) to reduce oropharyngeal edema.

  20. Laser diode technology for coherent communications

    Science.gov (United States)

    Channin, D. J.; Palfrey, S. L.; Toda, M.

    1989-01-01

    The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.

  1. Plasma Emission Profile Recreation using Soft X-Ray Tomography

    Science.gov (United States)

    Page, J. W.; Mauel, M. E.; Levesque, J. P.

    2015-11-01

    With sufficient views from multiple diode arrays, soft X-ray tomography is an invaluable plasma diagnostic because it is a non-perturbing method to reconstruct the emission within the interior of the plasma. In preparation for the installation of new SXR arrays in HBT-EP, we compute high-resolution tomographic reconstructions of discharges having kink-like structures that rotate nearly rigidly. By assuming a uniform angular mapping from the kink mode rotation, Δϕ ~ ωΔ t, a temporal sequence from a single 16-diode fan array represents as many as 16 x 100 independent views. We follow the procedure described by Wang and Granetz and use Bessel basis functions to take the inverse Radon transform. This transform is fit to our data using a least-squares method to estimate the internal SXR emissivity as a sum of polar functions. By varying different parameters of the transformation, we optimize the quality of our recreation of the emission profile and quantify how the reconstruction changes with the azimuthal order of the transform. Supported by U.S. DOE Grant DE-FG02-86ER53222.

  2. Recent advancements in spectroscopy using tunable diode lasers

    International Nuclear Information System (INIS)

    Nasim, Hira; Jamil, Yasir

    2013-01-01

    Spectroscopy using tunable diode lasers is an area of research that has gone through a dramatic evolution over the last few years, principally because of new exciting approaches in the field of atomic and molecular spectroscopy. This article attempts to review major recent advancements in the field of diode laser based spectroscopy. The discussion covers the developments made so far in the field of diode lasers and illustrates comprehensively the properties of free-running diode lasers. Since the commercially available free-running diode lasers are not suitable for high-precision spectroscopic studies, various techniques developed so far for converting these free-running diode lasers into true narrow linewidth tunable laser sources are discussed comprehensively herein. The potential uses of diode lasers in different spectroscopic fields and their extensive list of applications have also been included, which may be interesting for the novice and the advanced user as well. (topical review)

  3. Laser-heated emissive plasma probe.

    Science.gov (United States)

    Schrittwieser, Roman; Ionita, Codrina; Balan, Petru; Gstrein, Ramona; Grulke, Olaf; Windisch, Thomas; Brandt, Christian; Klinger, Thomas; Madani, Ramin; Amarandei, George; Sarma, Arun K

    2008-08-01

    Emissive probes are standard tools in laboratory plasmas for the direct determination of the plasma potential. Usually they consist of a loop of refractory wire heated by an electric current until sufficient electron emission. Recently emissive probes were used also for measuring the radial fluctuation-induced particle flux and other essential parameters of edge turbulence in magnetized toroidal hot plasmas [R. Schrittwieser et al., Plasma Phys. Controlled Fusion 50, 055004 (2008)]. We have developed and investigated various types of emissive probes, which were heated by a focused infrared laser beam. Such a probe has several advantages: higher probe temperature without evaporation or melting and thus higher emissivity and longer lifetime, no deformation of the probe in a magnetic field, no potential drop along the probe wire, and faster time response. The probes are heated by an infrared diode laser with 808 nm wavelength and an output power up to 50 W. One probe was mounted together with the lens system on a radially movable probe shaft, and radial profiles of the plasma potential and of its oscillations were measured in a linear helicon discharge.

  4. Laser-heated emissive plasma probe

    International Nuclear Information System (INIS)

    Schrittwieser, Roman; Ionita, Codrina; Balan, Petru; Gstrein, Ramona; Grulke, Olaf; Windisch, Thomas; Brandt, Christian; Klinger, Thomas; Madani, Ramin; Amarandei, George; Sarma, Arun K.

    2008-01-01

    Emissive probes are standard tools in laboratory plasmas for the direct determination of the plasma potential. Usually they consist of a loop of refractory wire heated by an electric current until sufficient electron emission. Recently emissive probes were used also for measuring the radial fluctuation-induced particle flux and other essential parameters of edge turbulence in magnetized toroidal hot plasmas [R. Schrittwieser et al., Plasma Phys. Controlled Fusion 50, 055004 (2008)]. We have developed and investigated various types of emissive probes, which were heated by a focused infrared laser beam. Such a probe has several advantages: higher probe temperature without evaporation or melting and thus higher emissivity and longer lifetime, no deformation of the probe in a magnetic field, no potential drop along the probe wire, and faster time response. The probes are heated by an infrared diode laser with 808 nm wavelength and an output power up to 50 W. One probe was mounted together with the lens system on a radially movable probe shaft, and radial profiles of the plasma potential and of its oscillations were measured in a linear helicon discharge

  5. Laser-heated emissive plasma probe

    Science.gov (United States)

    Schrittwieser, Roman; Ionita, Codrina; Balan, Petru; Gstrein, Ramona; Grulke, Olaf; Windisch, Thomas; Brandt, Christian; Klinger, Thomas; Madani, Ramin; Amarandei, George; Sarma, Arun K.

    2008-08-01

    Emissive probes are standard tools in laboratory plasmas for the direct determination of the plasma potential. Usually they consist of a loop of refractory wire heated by an electric current until sufficient electron emission. Recently emissive probes were used also for measuring the radial fluctuation-induced particle flux and other essential parameters of edge turbulence in magnetized toroidal hot plasmas [R. Schrittwieser et al., Plasma Phys. Controlled Fusion 50, 055004 (2008)]. We have developed and investigated various types of emissive probes, which were heated by a focused infrared laser beam. Such a probe has several advantages: higher probe temperature without evaporation or melting and thus higher emissivity and longer lifetime, no deformation of the probe in a magnetic field, no potential drop along the probe wire, and faster time response. The probes are heated by an infrared diode laser with 808nm wavelength and an output power up to 50W. One probe was mounted together with the lens system on a radially movable probe shaft, and radial profiles of the plasma potential and of its oscillations were measured in a linear helicon discharge.

  6. Noise temperature improvement for magnetic fusion plasma millimeter wave imaging systems

    Energy Technology Data Exchange (ETDEWEB)

    Lai, J.; Domier, C. W.; Luhmann, N. C. [Department of Electrical and Computer Engineering, University of California at Davis, Davis, California 95616 (United States)

    2014-03-15

    Significant progress has been made in the imaging and visualization of magnetohydrodynamic and microturbulence phenomena in magnetic fusion plasmas [B. Tobias et al., Plasma Fusion Res. 6, 2106042 (2011)]. Of particular importance have been microwave electron cyclotron emission imaging and microwave imaging reflectometry systems for imaging T{sub e} and n{sub e} fluctuations. These instruments have employed heterodyne receiver arrays with Schottky diode mixer elements directly connected to individual antennas. Consequently, the noise temperature has been strongly determined by the conversion loss with typical noise temperatures of ∼60 000 K. However, this can be significantly improved by making use of recent advances in Monolithic Microwave Integrated Circuit chip low noise amplifiers to insert a pre-amplifier in front of the Schottky diode mixer element. In a proof-of-principle design at V-Band (50–75 GHz), significant improvement of noise temperature from the current 60 000 K to measured 4000 K has been obtained.

  7. Noise temperature improvement for magnetic fusion plasma millimeter wave imaging systems.

    Science.gov (United States)

    Lai, J; Domier, C W; Luhmann, N C

    2014-03-01

    Significant progress has been made in the imaging and visualization of magnetohydrodynamic and microturbulence phenomena in magnetic fusion plasmas [B. Tobias et al., Plasma Fusion Res. 6, 2106042 (2011)]. Of particular importance have been microwave electron cyclotron emission imaging and microwave imaging reflectometry systems for imaging T(e) and n(e) fluctuations. These instruments have employed heterodyne receiver arrays with Schottky diode mixer elements directly connected to individual antennas. Consequently, the noise temperature has been strongly determined by the conversion loss with typical noise temperatures of ~60,000 K. However, this can be significantly improved by making use of recent advances in Monolithic Microwave Integrated Circuit chip low noise amplifiers to insert a pre-amplifier in front of the Schottky diode mixer element. In a proof-of-principle design at V-Band (50-75 GHz), significant improvement of noise temperature from the current 60,000 K to measured 4000 K has been obtained.

  8. Noise temperature improvement for magnetic fusion plasma millimeter wave imaging systems

    International Nuclear Information System (INIS)

    Lai, J.; Domier, C. W.; Luhmann, N. C.

    2014-01-01

    Significant progress has been made in the imaging and visualization of magnetohydrodynamic and microturbulence phenomena in magnetic fusion plasmas [B. Tobias et al., Plasma Fusion Res. 6, 2106042 (2011)]. Of particular importance have been microwave electron cyclotron emission imaging and microwave imaging reflectometry systems for imaging T e and n e fluctuations. These instruments have employed heterodyne receiver arrays with Schottky diode mixer elements directly connected to individual antennas. Consequently, the noise temperature has been strongly determined by the conversion loss with typical noise temperatures of ∼60 000 K. However, this can be significantly improved by making use of recent advances in Monolithic Microwave Integrated Circuit chip low noise amplifiers to insert a pre-amplifier in front of the Schottky diode mixer element. In a proof-of-principle design at V-Band (50–75 GHz), significant improvement of noise temperature from the current 60 000 K to measured 4000 K has been obtained

  9. Quasi-CW Laser Diode Bar Life Tests

    Science.gov (United States)

    Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

    1997-01-01

    NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

  10. Carbon nanotube Schottky diode: an atomic perspective

    International Nuclear Information System (INIS)

    Bai, P; Li, E; Kurniawan, O; Koh, W S; Lam, K T

    2008-01-01

    The electron transport properties of semiconducting carbon nanotube (SCNT) Schottky diodes are investigated with atomic models using density functional theory and the non-equilibrium Green's function method. We model the SCNT Schottky diode as a SCNT embedded in the metal electrode, which resembles the experimental set-up. Our study reveals that the rectification behaviour of the diode is mainly due to the asymmetric electron transmission function distribution in the conduction and valence bands and can be improved by changing metal-SCNT contact geometries. The threshold voltage of the diode depends on the electron Schottky barrier height which can be tuned by altering the diameter of the SCNT. Contrary to the traditional perception, the metal-SCNT contact region exhibits better conductivity than the other parts of the diode

  11. Dry etching characteristics of GaN for blue/green light-emitting diode fabrication

    International Nuclear Information System (INIS)

    Baik, K.H.; Pearton, S.J.

    2009-01-01

    The etch rates, surface morphology and sidewall profiles of features formed in GaN/InGaN/AlGaN multiple quantum well light-emitting diodes by Cl 2 -based dry etching are reported. The chlorine provides an enhancement in etch rate of over a factor of 40 relative to the physical etching provided by Ar and the etching is reactant-limited until chlorine gas flow rates of at least 50 standard cubic centimeters per minute. Mesa sidewall profile angle control is possible using a combination of Cl 2 /Ar plasma chemistry and SiO 2 mask. N-face GaN is found to etch faster than Ga-face surfaces under the same conditions. Patterning of the sapphire substrate for improved light extraction is also possible using the same plasma chemistry

  12. Electromagnetic wave analogue of electronic diode

    OpenAIRE

    Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

  13. Plasma assisted surface coating/modification processes: An emerging technology

    Science.gov (United States)

    Spalvins, T.

    1986-01-01

    A broad understanding of the numerous ion or plasma assisted surface coating/modification processes is sought. An awareness of the principles of these processes is needed before discussing in detail the ion nitriding technology. On the basis of surface modifications arising from ion or plasma energizing and interactions, it can be broadly classified as deposition of distinct overlay coatings (sputtering-dc, radio frequency, magnetron, reactive; ion plating-diode, triode) and surface property modification without forming a discrete coating (ion implantation, ion beam mixing, laser beam irradiation, ion nitriding, ion carburizing, plasma oxidation). These techniques offer a great flexibility and are capable in tailoring desirable chemical and structural surface properties independent of the bulk properties.

  14. Plasma assisted surface coating/modification processes - An emerging technology

    Science.gov (United States)

    Spalvins, T.

    1987-01-01

    A broad understanding of the numerous ion or plasma assisted surface coating/modification processes is sought. An awareness of the principles of these processes is needed before discussing in detail the ion nitriding technology. On the basis of surface modifications arising from ion or plasma energizing and interactions, it can be broadly classified as deposition of distinct overlay coatings (sputtering-dc, radio frequency, magnetron, reactive; ion plating-diode, triode) and surface property modification without forming a discrete coating (ion implantation, ion beam mixing, laser beam irradiation, ion nitriding, ion carburizing, plasma oxidation. These techniques offer a great flexibility and are capable in tailoring desirable chemical and structural surface properties independent of the bulk properties.

  15. A practical guide to handling laser diode beams

    CERN Document Server

    Sun, Haiyin

    2015-01-01

    This book offers the reader a practical guide to the control and characterization of laser diode beams.  Laser diodes are the most widely used lasers, accounting for 50% of the global laser market.  Correct handling of laser diode beams is the key to the successful use of laser diodes, and this requires an in-depth understanding of their unique properties. Following a short introduction to the working principles of laser diodes, the book describes the basics of laser diode beams and beam propagation, including Zemax modeling of a Gaussian beam propagating through a lens.  The core of the book is concerned with laser diode beam manipulations: collimating and focusing, circularization and astigmatism correction, coupling into a single mode optical fiber, diffractive optics and beam shaping, and manipulation of multi transverse mode beams.  The final chapter of the book covers beam characterization methods, describing the measurement of spatial and spectral properties, including wavelength and linewidth meas...

  16. Plasma etching of niobium-SiO/sub x/ layers

    International Nuclear Information System (INIS)

    Schelle, D.; Tiller, H.J.

    1986-01-01

    CF 4 -plasma etching of niobium and SiO/sub x/ layers has been investigated in a r.f. diode reactor. Etch rates increase linearly with increasing power density and also increase with pressure. The etch rate ratio can be changed using different etch gases or operating in different plasma modes (PE or IEPE). Changing from the ion enhanced plasma etching mode (IEPE) to plasma etching mode (PE) the etch rate ratio is changing by a factor of ten. On the basis of etch rate dependences on process parametes and thermodynamic data it has been suggested the generation of fluorine radicals as the rate limiting step. A general etching model has been proposed, which explains qualitatively and quantitatively (on account of data from literature) the measured results. (author)

  17. 2D imaging X-ray diagnostic for measuring the current density distribution in a wide-area electron beam produced in a multiaperture diode with plasma cathode

    Science.gov (United States)

    Kurkuchekov, V.; Kandaurov, I.; Trunev, Y.

    2018-05-01

    A simple and inexpensive X-ray diagnostic tool was designed for measuring the cross-sectional current density distribution in a low-relativistic pulsed electron beam produced in a source based on an arc-discharge plasma cathode and multiaperture diode-type electron optical system. The beam parameters were as follows: Uacc = 50–110 kV, Ibeam = 20–100 A, τbeam = 0.1–0.3 ms. The beam effective diameter was ca. 7 cm. Based on a pinhole camera, the diagnostic allows one to obtain a 2D profile of electron beam flux distribution on a flat metal target in a single shot. The linearity of the diagnostic system response to the electron flux density was established experimentally. Spatial resolution of the diagnostic was also estimated in special test experiments. The optimal choice of the main components of the diagnostic technique is discussed.

  18. Diode for providing X-rays

    International Nuclear Information System (INIS)

    Rix, W.H.; Shannon, J.P.

    1991-01-01

    This patent describes a diode for generating X-rays and adapted for connection to a source of high electrical energy having a source of high energy electrons and a ground, the diode having a first end from which the X-rays are emitted, a second end and an axis extending between the ends. It comprises: a ring cathode connected to the electron source; an intermediate anode spaced from the ring cathode and with at least a portion of the intermediate anode being disposed between the ring cathode and the diode first end, the intermediate anode hiving means for decelerating electrons to cause the generation of X-rays emitted from the first end; an intermediate cathode disposed radially outwardly of the intermediate anode and connected thereto; and an inverse anode spaced from the intermediate cathode, the inverse and anode being disposed radially outwardly of the intermediate cathode and the inverse anode being positioned between the intermediate cathode and the diode second end

  19. Diode laser based light sources for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin

    2013-01-01

    Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode...... imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications....

  20. Diode-Assisted Buck-Boost Voltage-Source Inverters

    DEFF Research Database (Denmark)

    Gao, Feng; Loh, Poh Chiang; Teodorescu, Remus

    2009-01-01

    , a number of diode-assisted inverter variants can be designed with each having its own operational principle and voltage gain expression. For controlling them, a generic modulation scheme that can be used for controlling all diode-assisted variants with minimized harmonic distortion and component stress......This paper proposes a number of diode-assisted buck-boost voltage-source inverters with a unique X-shaped diode-capacitor network inserted between the inverter circuitry and dc source for producing a voltage gain that is comparatively higher than those of other buck-boost conversion techniques....... Using the diode-assisted network, the proposed inverters can naturally configure themselves to perform capacitive charging in parallel and discharging in series to give a higher voltage multiplication factor without compromising waveform quality. In addition, by adopting different front-end circuitries...

  1. Ion current reduction in pinched electron beam diodes

    International Nuclear Information System (INIS)

    Quintenz, J.P.; Poukey, J.W.

    1977-01-01

    A new version of a particle-in-cell diode code has been written which permits the accurate treatment of higher-current diodes with greater physical dimensions. Using this code, we have studied ways to reduce the ion current in large-aspect-ratio pinched electron beam diodes. In particular, we find that allowing the ions to reflex in such diodes lowers the ion to electron current ratio considerably. In a 3-MV R/d=24 case this ratio was lowered by a factor of 6--8 compared with the corresponding nonreflexing-ion diode, while still producing a superpinched electron beam

  2. Arbitrary waveform generator to improve laser diode driver performance

    Science.gov (United States)

    Fulkerson, Jr, Edward Steven

    2015-11-03

    An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

  3. Trap-induced photoconductivity in singlet fission pentacene diodes

    Energy Technology Data Exchange (ETDEWEB)

    Qiao, Xianfeng, E-mail: qiaoxianfeng@hotmail.com; Zhao, Chen; Chen, Bingbing; Luan, Lin [WuHan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wu Han 430074 (China)

    2014-07-21

    This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

  4. Refractive index gradient diagnostics: analysis of different optical systems and application to COBRA ion diode

    Energy Technology Data Exchange (ETDEWEB)

    Knyazev, B A; Greenly, J B; Hammer, D A; Krastelev, E G [Cornell Univ., Ithaca, NY (United States). Laboratory of Plasma Studies; Cuneo, M E [Sandia National Laboratories, Albuquerque, NM (United States)

    1997-12-31

    Different optical system variations for refractive index gradient diagnostics with a laser beam probe have been analyzed. A `three-telescope` optical system which permits simultaneous measurement of both the laser beam centroid deflection by a bi-cell photodiode and the spatial Fourier spectrum of the deflected beam by a streak camera has been implemented on the COBRA ion diode. The dynamics of the anode plasma layer was studied with these techniques. (author). 3 figs., 8 refs.

  5. Silicon monolithic microchannel-cooled laser diode array

    International Nuclear Information System (INIS)

    Skidmore, J. A.; Freitas, B. L.; Crawford, J.; Satariano, J.; Utterback, E.; DiMercurio, L.; Cutter, K.; Sutton, S.

    2000-01-01

    A monolithic microchannel-cooled laser diode array is demonstrated that allows multiple diode-bar mounting with negligible thermal cross talk. The heat sink comprises two main components: a wet-etched Si layer that is anodically bonded to a machined glass block. The continuous wave (cw) thermal resistance of the 10 bar diode array is 0.032 degree sign C/W, which matches the performance of discrete microchannel-cooled arrays. Up to 1.5 kW/cm 2 is achieved cw at an emission wavelength of ∼808 nm. Collimation of a diode array using a monolithic lens frame produced a 7.5 mrad divergence angle by a single active alignment. This diode array offers high average power/brightness in a simple, rugged, scalable architecture that is suitable for large two-dimensional areas. (c) 2000 American Institute of Physics

  6. Kinetic and Diagnostic Studies of Molecular Plasmas Using Laser Absorption Techniques

    International Nuclear Information System (INIS)

    Welzel, S; Rousseau, A; Davies, P B; Roepcke, J

    2007-01-01

    Within the last decade mid infrared absorption spectroscopy between 3 and 20 μm, known as Infrared Laser Absorption Spectroscopy (IRLAS) and based on tuneable semiconductor lasers, namely lead salt diode lasers, often called tuneable diode lasers (TDL), and quantum cascade lasers (QCL) has progressed considerably as a powerful diagnostic technique for in situ studies of the fundamental physics and chemistry of molecular plasmas. The increasing interest in processing plasmas containing hydrocarbons, fluorocarbons, organo-silicon and boron compounds has lead to further applications of IRLAS because most of these compounds and their decomposition products are infrared active. IRLAS provides a means of determining the absolute concentrations of the ground states of stable and transient molecular species, which is of particular importance for the investigation of reaction kinetics. Information about gas temperature and population densities can also be derived from IRLAS measurements. A variety of free radicals and molecular ions have been detected, especially using TDLs. Since plasmas with molecular feed gases are used in many applications such as thin film deposition, semiconductor processing, surface activation and cleaning, and materials and waste treatment, this has stimulated the adaptation of infrared spectroscopic techniques to industrial requirements. The recent development of QCLs offers an attractive new option for the monitoring and control of industrial plasma processes as well as for highly time-resolved studies on the kinetics of plasma processes. The aim of the present article is threefold: (i) to review recent achievements in our understanding of molecular phenomena in plasmas (ii) to report on selected studies of the spectroscopic properties and kinetic behaviour of radicals, and (iii) to describe the current status of advanced instrumentation for TDLAS in the mid infrared

  7. The Beam Characteristics of High Power Diode Laser Stack

    Science.gov (United States)

    Gu, Yuanyuan; Fu, Yueming; Lu, Hui; Cui, Yan

    2018-03-01

    Direct diode lasers have some of the most attractive features of any laser. They are very efficient, compact, wavelength versatile, low cost, and highly reliable. However, the full utilization of direct diode lasers has yet to be realized. However, the poor quality of diode laser beam itself, directly affect its application ranges, in order to better use of diode laser stack, need a proper correction of optical system, which requires accurate understanding of the diode laser beam characteristics. Diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. Therefore diode laser cladding will open a new field of repairing for the damaged machinery parts which must contribute to recycling of the used machines and saving of cost.

  8. Low-cost electrochemical treatment of indium tin oxide anodes for high-efficiency organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hui Cheng, Chuan, E-mail: chengchuanhui@dlut.edu.cn; Shan Liang, Ze; Gang Wang, Li; Dong Gao, Guo; Zhou, Ting; Ming Bian, Ji; Min Luo, Ying [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Tong Du, Guo, E-mail: dugt@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

    2014-01-27

    We demonstrate a simple low-cost approach as an alternative to conventional O{sub 2} plasma treatment to modify the surface of indium tin oxide (ITO) anodes for use in organic light-emitting diodes. ITO is functionalized with F{sup −} ions by electrochemical treatment in dilute hydrofluoric acid. An electrode with a work function of 5.2 eV is achieved following fluorination. Using this electrode, a maximum external quantum efficiency of 26.0% (91 cd/A, 102 lm/W) is obtained, which is 12% higher than that of a device using the O{sub 2} plasma-treated ITO. Fluorination also increases the transparency in the near-infrared region.

  9. Progress in semiconductor laser diodes: SPIE volume 723

    International Nuclear Information System (INIS)

    Eichen, E.

    1987-01-01

    This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

  10. Performance of magnetically-injected-plasma opening switches on the particle beam fusion accelerator 2

    International Nuclear Information System (INIS)

    Rochau, G.E.; McDaniel, D.H.; Mendel, C.W.; Sweeney, M.A.; Moore, W.B.S.; Mowrer, G.R.; Zagar, D.M.

    1990-01-01

    Plasma opening switch (POS) experiments have been performed on the PBFA II ion beam accelerator to develop a switch which will provide voltage and power gain to an applied-B lithium ion diode. These experiments have successfully coupled power to electron and ion beam diodes using a Magnetically-Injected-Plasma (MIP) POS. Carbon plasma with electron densities of 1 x 10 12 to 2 x 10 13 /cm 3 have been injected from the anode into the 8 cm gap of the 20-ohm Magnetically-Insulated-Transmission Line (MITL) of PBFA II along a B r,z magnetic field. The MIP switch uses the inertia of the plasma to keep the switch closed and the magnetic pressure of B θ from the conduction current to open the switch. The configuration of the injecting magnetic field and the plasma source has a significant effect on the efficiency of coupling power to high impedance loads. Plasma near the center of the injecting magnetic field limits the opening impedance of the switch and subsequently the power delivered to the load. The axial location of the switch with respect to the load has also been identified as a critical parameter in increasing the coupling efficiency. A length of 10 to 20 cm of MITL between the POS and the load has increased the power delivered to the load. Data on switch performance with high impedance loads and factors which improved performance are discussed

  11. High voltage, high power operation of the plasma erosion opening switch

    International Nuclear Information System (INIS)

    Neri, J.M.; Boller, J.R.; Ottinger, P.F.; Weber, B.V.; Young, F.C.

    1987-01-01

    A Plasma Erosion Opening Switch (PEOS) is used as the opening switch for a vacuum inductive storage system driven by a 1.8-MV, 1.6-TW pulsed power generator. A 135-nH vacuum inductor is current charged to ∼750 kA in 50 ns through the closed PEOS which then opens in <10 ns into an inverse ion diode load. Electrical diagnostics and nuclear activations from ions accelerated in the diode yield a peak load voltage (4.25 MV) and peak load power (2.8 TW) that are 2.4 and 1.8 times greater than ideal matched load values for the same generator pulse

  12. Radiation effects in semiconductor laser diode arrays

    International Nuclear Information System (INIS)

    Carson, R.F.

    1988-01-01

    The effects of radiation events are important for many of the present and future applications that involve optoelectronic components. Laser diodes show a strong resistance to degradation by gamma rays, prompt x-rays and (to a lesser extent), neutrons. This is due to the short carrier lifetime that is associated with stimulated emission and the high current injection conditions that are present in these devices. Radiation-resistant properties should carry over to many of the more recently developed devices such as multi-stripe array and broad area laser diodes. There are, however, additional considerations for radiation tolerance that are introduced by these devices. Arrays and other high power laser diodes have larger active region volumes than lower power single stripe devices. In addition, evanescent field coupling between stripes, the material quality available from newer MOCVD epitaxial growth techniques, and stripe definition methods may all influence the radiation tolerance of the high power laser diode devices. Radiation tests have been conducted on various GaAs-GaAlAs laser diode array and broad area devices. Tests involving total gamma dose have indicated that high power laser diodes and arrays have small degradations in light power output with current input after 4 MRad(Si) of radiation from a Co 60 source. Additional test results involving flash x-rays indicate that high power diode lasers and arrays are tolerant to 10 12 rads(Si)/sec, when observed on microsecond or millisecond time scales. High power diode laser devices were also irradiated with neutrons to a fluence of 10 14 neutrons/cm 2 with some degradation of threshold current level

  13. Microclump effects in magnetically-immersed electron diodes

    International Nuclear Information System (INIS)

    Olson, C.L.

    1998-01-01

    Magnetically-immersed electron diodes are being developed to produce needle-like, high-current, electron beams for radiography applications. An immersed diode consists of a needle cathode and a planar anode/bremmstrahlung converter which are both immersed in a strong solenoidal magnetic field (12--50 T); nominal parameters are 10 MV, 40 kA, 0.5 mm radius cathode, and 5--35 cm anode-cathode gaps. A physical picture of normal and abnormal diode behavior is emerging. Normal diode behavior occurs for times 0 ≤ t ≤ τ, where the transition time τ is typically 30 ns; during this time, bipolar space-charge limited flow occurs, which scales well to desired radiography parameters of high dose and small spot size. Abnormal diode behavior occurs for t ≥ τ, which results in substantial increases in spot size and current (impedance reduction). This abnormal behavior appears to be caused by an increase in ion charge in the gap, which may result from poor vacuum, impurity ions undergoing ion-ion stripping collisions during transit, or microclumps undergoing stripping collisions during transit. The potential effects of microclumps on diode behavior are reported here

  14. High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Darbari, S; Shahmohammadi, M; Mortazavi, M; Mohajerzadeh, S [Thin Film and Nano-Electronic Laboratory, School of ECE, University of Tehran, Tehran (Iran, Islamic Republic of); Abdi, Y [Nano-Physics Research Laboratory, Department of Physics, University of Tehran, Tehran (Iran, Islamic Republic of); Robertson, M; Morrison, T, E-mail: mohajer@ut.ac.ir [Department of Physics, Acadia University, Wolfville, NS (Canada)

    2011-09-16

    A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create nano-scale features. The physical characteristics of the films prepared using different plasma conditions were investigated using scanning electron microscopy, transmission electron microscopy, room temperature photoluminescence and infrared spectroscopy. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence and a thin layer of silicon oxy-nitride was then used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been demonstrated and the electroluminescence spectrum has been measured.

  15. Numerical Study of Radiation Emissions from the Plasma Focus

    International Nuclear Information System (INIS)

    Akel, M.; Salo, S.

    2013-12-01

    Ion populations of studied plasma have been calculated versus electron temperatures. The expected emission spectra (full, Bremsstrahlung, recombination, and line) of plasma focus operated with different gases (nitrogen, oxygen, neon, argon, krypton and xenon) have been studied for different conditions using POPULATE, SPECTRA, XRAYFIL and FLYCHK codes for non-local thermodynamic equilibrium model (NLTE). The suitable electron temperatures ranges for soft X-ray and extreme ultraviolet (EUV) emissions from plasma focus have been investigated. The Ratio- BPX65.F code has been written in FORTRAN 77 for studying the soft X-ray emission of plasma focus using BPX65 PIN Diode X-ray Spectrometer technique. The X-ray ratio curves for various electron temperatures with probable electron and ion densities of the studied plasma produced have been computed with the assumption of non-LTE model for the distribution of the ionic species. The calculated X-ray ratio curves have been compared with experimental results for the argon plasma focus. These ratio curves could be used for electron temperatures deduction of plasma focus (author).

  16. Electron injection in diodes with field emission

    International Nuclear Information System (INIS)

    Denavit, J.; Strobel, G.L.

    1986-01-01

    This paper presents self-consistent steady-state solutions of the space charge, transmitted current, and return currents in diodes with electron injection from the cathode and unlimited field emission of electrons and ions from both electrodes. Time-dependent particle simulations of the diode operation confirm the analytical results and show how these steady states are reached. The results are applicable to thermionic diodes and to photodiodes

  17. Phenomenological studies of electron-beam transport in wire-plasma channels

    International Nuclear Information System (INIS)

    Lockwood, G.J.; Beezhold, W.

    1980-01-01

    Multiple electron-beam transport in air through plasma channels is an important method for delivering many intense beams to a bremsstrahlung converter system. This paper reports work intended to optimize this transport technique with emphasis on transport through curved channels and on transport efficiencies. Curved-channel transport allows accelerators such as Sandia's PROTO II and PBFA I facilities to be used as flash x-ray sources for weapon effects simulation without reconfiguring the diodes or developing advanced converters. The formation mechanisms of wire-initiated plasma channels in air were examined and the subsequent transport efficiencies of relativistic electron beams through various-length straight and curved plasma channels were determined. Electron transport efficiency through a channel was measured to be 80 to 100% of a zero length channel for 40 cm long straight channels and for curved channels which re-directed the electron beam through an angle of 90 0 . Studies of simultaneous e-beam transport along two curved channels closely spaced at the converter showed that transport efficiency remained at 80 to 100%. However, it was observed that the two e-beams were displaced towards each other. Transport efficiency was observed to depend only weakly on parameters such as wire material, wire length and shape, diode anode aperture, e-beam injection time, and wire-channel applied voltage. For off-center injection conditions the electron beam strongly perturbed the plasma channel in periodic or regularly spaced patterns even though the total energy lost by the electron beam remained small. Plasma-channel transport, when all experimental parameters have been optimized for maximum transport efficiency, is a workable method for directing electron beams to a converter target

  18. Cold cathode diode X-ray source

    International Nuclear Information System (INIS)

    Cooperstein, G.; Lanza, R.C.; Sohval, A.R.

    1983-01-01

    A cold cathode diode X-ray source for radiation imaging, especially computed tomography, comprises a rod-like anode and a generally cylindrical cathode, concentric with the anode. The spacing between anode and cathode is so chosen that the diode has an impedance in excess of 100 ohms. The anode may be of tungsten, or of carbon with a tungsten and carbon coating. An array of such diodes may be used with a closely packed array of detectors to produce images of rapidly moving body organs, such as the beating heart. (author)

  19. Cern DD4424 ROM Diode Matrix

    CERN Multimedia

    A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

  20. A Diode Matrix model M792

    CERN Multimedia

    A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

  1. On the intrinsic moisture permeation rate of remote microwave plasma-deposited silicon nitride layers

    NARCIS (Netherlands)

    van Assche, F. J. H.; Unnikrishnan, S.; Michels, J. J.; van Mol, A. M. B.; van de Weijer, P.; M. C. M. van de Sanden,; Creatore, M.

    2014-01-01

    We report on a low substrate temperature (110 °C) remote microwave plasma-enhanced chemical vapor deposition (PECVD) process of silicon nitride barrier layers against moisture permeation for organic light emitting diodes (OLEDs) and other moisture sensitive devices such as organic

  2. Electromagnetic wave analogue of an electronic diode

    International Nuclear Information System (INIS)

    Shadrivov, Ilya V; Powell, David A; Kivshar, Yuri S; Fedotov, Vassili A; Zheludev, Nikolay I

    2011-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of rotation of the polarization state and is also a key component in optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by an extraordinarily strong nonlinear wave propagation effect in the same way as the electronic diode function is provided by the nonlinear current characteristic of a semiconductor junction. The effect exploited in this new electromagnetic diode is an intensity-dependent polarization change in an artificial chiral metamolecule. This microwave effect exceeds a similar optical effect previously observed in natural crystals by more than 12 orders of magnitude and a direction-dependent transmission that differs by a factor of 65.

  3. High-temperature current conduction through three kinds of Schottky diodes

    International Nuclear Information System (INIS)

    Fei, Li; Xiao-Ling, Zhang; Yi, Duan; Xue-Song, Xie; Chang-Zhi, Lü

    2009-01-01

    Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I–V–T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. Diode laser pumping

    International Nuclear Information System (INIS)

    Skagerlund, L.E.

    1975-01-01

    A diode laser is pumped or pulsed by a repeated capacitive discharge. A capacitor is periodically charged from a dc voltage source via a transformer, the capacitor being discharged through the diode laser via a controlled switching means after one or more charging periods. During a first interval of each charging period the transformer, while unloaded, stores a specific amount of energy supplied from the dc voltage source. During a subsequent interval of the charging period said specific amount of energy is transmitted from the transformer to the capacitor. The discharging of the capacitor takes place during a first interval of a charging period. (auth)

  5. Few-photon optical diode

    OpenAIRE

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

  6. Developments in lead-salt diode lasers

    International Nuclear Information System (INIS)

    Partin, D.L.

    1985-01-01

    Lead-chalcogenide diode lasers are useful as mid-infrared sources (2-1/2 <λ<30 μm), but have generally operated CW below 100K. A new materials system, PbEuSeTe, has been used to fabricate diode lasers operating from 10K (at 6.5 μm wavelength) up to 174K CW (at 4.4 μm) and up to 280K pulsed (at 3.8 μm). These are large optical cavity single quantum well devices grown by molecular beam epitaxy. These are currently the highest diode laser operating temperatures ever achieved at these wavelengths to our knowledge. Single ended output powers as high as 1 mW single mode (5 mW multimode) have been attained from mesa stripe diodes. These characteristics make these devices attractive for long wavelength fiber optic sensor/communications systems. The performance limits of these devices are discussed

  7. Use of epitaxial silicon diodes in photon dosimetry

    International Nuclear Information System (INIS)

    Pereira, Lilian Nunes

    2013-01-01

    In this work we report on results obtained with two rad-hard epitaxial (EPI) silicon diodes as on-line dosimeter for diagnostic radiology, mammography and computed tomography, in the 28 kV to 150 kV range. The epitaxial diodes used were processed at University of Hamburg on 50 μm thick epitaxial silicon layer. One sample was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 200kGy from 60 Co. For comparison, a standard float zone silicon diode was also studied. The samples irradiation was performed using X-ray beams from a Pantak/Seifert generator, model Isovolt 160 HS, previously calibrated with standardized ionization chambers, located at Laboratorio de Calibracao de Instrumentos of IPEN-CNEN/SP. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. Irradiations were carried out with the diodes positioned at lm from the X-ray tube (focal spot). The main dosimetric parameters of the EPI samples were evaluated in according to IEC 61674 norm. The calibration coefficients of the diode, in terms of air kerma, were also determined. The repeatability was measured with photon beams of all qualities. The current signals induced showed the diodes are stable, characterized by coefficients of variation less than 0.3%. The current response of the unirradiated EPI diode has been shown to be very linear with dose-rate in the range of 0.8 up to 77.2 mGy/min. A linear relation between charge and dose in the whole energy range was observed for the three samples. It is important to notice that for EPI diodes non energy dependence was observed for mammography beams and until 70kV for radiodiagnostic qualities. The unirradiated diode presented sensitivity higher than the others, showing a decrease of 8% in this parameter after accumulated dose of 49.15 Gy. The dark currents were stable about 0.4 pA during the irradiations, value 10 4 higher than the lowest photocurrents measured. The directional response of both

  8. Diode Laser for Laryngeal Surgery: a Systematic Review.

    Science.gov (United States)

    Arroyo, Helena Hotz; Neri, Larissa; Fussuma, Carina Yuri; Imamura, Rui

    2016-04-01

    Introduction The diode laser has been frequently used in the management of laryngeal disorders. The portability and functional diversity of this tool make it a reasonable alternative to conventional lasers. However, whether diode laser has been applied in transoral laser microsurgery, the ideal parameters, outcomes, and adverse effects remain unclear. Objective The main objective of this systematic review is to provide a reliable evaluation of the use of diode laser in laryngeal diseases, trying to clarify its ideal parameters in the larynx, as well as its outcomes and complications. Data Synthesis We included eleven studies in the final analysis. From the included articles, we collected data on patient and lesion characteristics, treatment (diode laser's parameters used in surgery), and outcomes related to the laser surgery performed. Only two studies were prospective and there were no randomized controlled trials. Most of the evidence suggests that the diode laser can be a useful tool for treatment of different pathologies in the larynx. In this sense, the parameters must be set depending on the goal (vaporization, section, or coagulation) and the clinical problem. The literature lacks studies on the ideal parameters of the diode laser in laryngeal surgery. The available data indicate that diode laser is a useful tool that should be considered in laryngeal surgeries. Thus, large, well-designed studies correlated with diode compared with other lasers are needed to better estimate its effects.

  9. Improvements to a high-frequency fiber-optic system for plasma diagnostics

    International Nuclear Information System (INIS)

    Ogle, J.W.; Lyons, P.B.; Looney, L.; Hocker, L.; Nelson, M.A.; Zagarino, P.A.; Davies, T.J.; Simmons, R.D.; Selk, R.; Hopkins, B.

    1981-01-01

    A system for high-frequency recording of plasma diagnostics has previously been reported. Substantial improvements have been made in the system response, dynamic range, and calibration of the system. Plastic-clad silica fiber is used as a radiation-to-light converter using the Cerenkov process. A spectral equalizer device is used to compensate for the material dispersion in the fiber, increasing the frequency response (approx. = 1 GHz-km) and the dynamic range (a factor of > 20 over a FWHM 1 nm, 50% transmitting interference filter). The calibration system uses a pulsed injection laser diode (< 100 ps FWHM) injected into the fiber at the radiation end of the fiber and detected by a microchannel plate photomultiplier tube on the recording end. The injection laser diode is triggered by a synchronous trigger delay unit, which also triggers a sampling or real time scope after as much as 10 μs delay with < 50 ps jitter. The system improvements are described in detail and the utility of these components in other plasma diagnostic systems is discussed

  10. Temporal evolution of ion energy in a plasma focus

    International Nuclear Information System (INIS)

    Rhee, M.J.; Weidman, D.J.

    1988-01-01

    For the first time, the temporal structure of ion energy in a plasma focus is revealed using a time-resolving Thomson spectrometer. The velocities and arrival times of ions are determined from the spectrogram. The resulting distribution of ions in velocity--time space at the source is found to be a line distribution, as if the ions were accelerated in a diode by a pulsed voltage

  11. Development of SMM wave laser scattering apparatus for the measurements of waves and turbulences in the tokamak plasma

    International Nuclear Information System (INIS)

    Saito, T.; Hamada, Y.; Yamashita, T.; Ikeda, M.; Nakamura, M.

    1980-01-01

    The SMM wave laser scattering apparatus has been developed for the measurement of the waves and turbulences in the plasma. This apparatus will help greatly to clarify the physics of RF heating of the tokamak plasma. The present status of main parts of the apparatus, the SMM wave laser and the Schottky barrier diode mixer for the heterodyne receiver, are described. (author)

  12. Study, realization and operation of a fast amplitude selector for X-ray spectrometry in thermonuclear plasma

    International Nuclear Information System (INIS)

    Allard, P.

    1986-06-01

    A semiconductor diode detector is here used to measure soft X radiation emitted by a plasma. Energetic resolution, in this case, is enough for electron study to improve time resolution - for use on Petula - a fast amplitude selector has been used with a good channel number. The Si(Li) diode X spectrometry system is detailed. For amplitude coder, ''video coders'' have been chosen which are parallel coders in integrated circuits. The different modules (coder rock memory one, visualization, Camac interface) of the multichannel analyzer are presented. Amplitude, selector characteristics are detailed, they are measured with pulses directly applied to the coder stage. Measurements made with the complete spectrometry system are shown; they are made successively with radioactive sources ( 55 Fe and 93 Nb), with a simulation generator and with the X radiation of Petula plasma [fr

  13. Current transport mechanisms in mercury cadmium telluride diode

    Energy Technology Data Exchange (ETDEWEB)

    Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [Institute of Defence Scientists and Technologists, CFEES Complex, Brig. S. K. Majumdar Marg, Delhi 110054 (India); Li, Qing; He, Jiale; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); He, Kai; Lin, Chun [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

    2016-08-28

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  14. High-performance noncontact thermal diode via asymmetric nanostructures

    Science.gov (United States)

    Shen, Jiadong; Liu, Xianglei; He, Huan; Wu, Weitao; Liu, Baoan

    2018-05-01

    Electric diodes, though laying the foundation of modern electronics and information processing industries, suffer from ineffectiveness and even failure at high temperatures. Thermal diodes are promising alternatives to relieve above limitations, but usually possess low rectification ratios, and how to obtain a high-performance thermal rectification effect is still an open question. This paper proposes an efficient contactless thermal diode based on the near-field thermal radiation of asymmetric doped silicon nanostructures. The rectification ratio computed via exact scattering theories is demonstrated to be as high as 10 at a nanoscale gap distance and period, outperforming the counterpart flat-plate diode by more than one order of magnitude. This extraordinary performance mainly lies in the higher forward and lower reverse radiative heat flux within the low frequency band compared with the counterpart flat-plate diode, which is caused by a lower loss and smaller cut-off wavevector of nanostructures for the forward and reversed scheme, respectively. This work opens new routes to realize high performance thermal diodes, and may have wide applications in efficient thermal computing, thermal information processing, and thermal management.

  15. Transition to chaos in periodically driven thermionic diodes at low pressure

    International Nuclear Information System (INIS)

    Klinger, T.; Timm, R.; Piel, A.

    1992-01-01

    The static I(U) characteristic of thermionic diodes at mbar pressures shows a large hysteresis, which describes the transition from the 'anode-glow-mode' (AGM), with essentially negative plasma potential, to the 'temperature-limited-mode' (TLM), with positive plasma potential. Many features of these modes are also found in magnetic-box discharges with filament cathodes at pressures of 10 -2 -10 -1 Pa. Although these two pressure regimes are basically different concerning the transport properties (diffusion vs. free streaming), the elementary processes that establish the AGM in the low pressure regime are very similar to the high pressure regime. Ions are produced in that part of the anode sheath where the potential exceeds the ionization energy. The production rate is enhanced by multiple reflections of electrons between the magnetic fields of the permanent magnet array at the anode and the repulsive potential of the cathode plasma. Although the mean free path for charge exchange or elastic collisions substantially exceeds the anode-cathode distance, some few ions are stopped and trapped within the potential well of the virtual cathode. This accumulation of ions forms a cathodic plasma, which is essentially at cathode potential. Plasma formation in the anode sheath is suppressed as long as the ion production time is larger than the ion transit time through the sheath. These model ideas are supported by 1d-Particle-in-cell simulations using a modified PDP1-code. The AGM is attractive for studies of nonlinear dynamics because of its feedback processes and oscillations, which occur close to the hysteresis point. (author) 7 refs., 3 figs

  16. Compact laser-diode-based femtosecond sources

    International Nuclear Information System (INIS)

    Brown, C T A; Cataluna, M A; Lagatsky, A A; Rafailov, E U; Agate, M B; Leburn, C G; Sibbett, W

    2004-01-01

    This paper describes the development of compact femtosecond laser systems that are capable of being directly pumped by laser diodes or are based directly on laser diodes. The paper demonstrates the latest results in a highly efficient vibronic based gain medium and a diode-pumped Yb:KYW laser is reported that has a wall plug efficiency >14%. A Cr 4+ :YAG oscillator is described that generates transform-limited pulses of 81 fs duration at a pulse repetition frequency of >4 GHz. The development of Cr 3+ :LiSAF lasers that can be operated using power supplies based on batteries is briefly discussed. We also present a summary of work being carried out on the generation of fs-pulses from laser diodes and discuss the important issues in this area. Finally, we outline results obtained on the generation of pulses as short as 550 fs directly from a two-section quantum dot laser without any external pulse compression

  17. Diode laser (980nm) cartilage reshaping

    Science.gov (United States)

    El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

    2011-03-01

    Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

  18. Thermic diode performance characteristics and design manual

    Science.gov (United States)

    Bernard, D. E.; Buckley, S.

    1979-01-01

    Thermic diode solar panels are a passive method of space and hot water heating using the thermosyphon principle. Simplified methods of sizing and performing economic analyses of solar heating systems had until now been limited to passive systems. A mathematical model of the thermic diode including its high level of stratification has been constructed allowing its performance characteristics to be studied. Further analysis resulted in a thermic diode design manual based on the f-chart method.

  19. High-speed and efficient silicon modulator based on forward-biased pin diodes

    Directory of Open Access Journals (Sweden)

    Suguru eAkiyama

    2014-11-01

    Full Text Available Silicon modulators, which use the free-carrier-plasma effect, were studied, both analytically and experimentally. It was demonstrated that the loss-efficiency product, a-VpL, was a suitable figure of merit for silicon modulators that enabled their intrinsic properties to be compared. Subsequently, the dependence of VpL on frequency was expressed by using the electrical parameters of a phase shifter when the modulator was operated by assuming a simple driving configuration. A diode-based modulator operated in forward biased mode was expected from analyses to provide more efficient operation than that in reversed mode at high frequencies due to its large capacitance. We obtained an a-VpL of 9.5 dB-V at 12.5 GHz in experiments by using the fabricated phase shifter with pin diodes operated in forward biased mode. This a-VpL was comparable to the best modulators operated in depletion mode. The modulator exhibited a clear eye opening at 56 Gb/s operated by 2 V peak-to-peak signals that was achieved by incorporating such a phase shifter into a ring resonator.

  20. Wavelength stabilized multi-kW diode laser systems

    Science.gov (United States)

    Köhler, Bernd; Unger, Andreas; Kindervater, Tobias; Drovs, Simon; Wolf, Paul; Hubrich, Ralf; Beczkowiak, Anna; Auch, Stefan; Müntz, Holger; Biesenbach, Jens

    2015-03-01

    We report on wavelength stabilized high-power diode laser systems with enhanced spectral brightness by means of Volume Holographic Gratings. High-power diode laser modules typically have a relatively broad spectral width of about 3 to 6 nm. In addition the center wavelength shifts by changing the temperature and the driving current, which is obstructive for pumping applications with small absorption bandwidths. Wavelength stabilization of high-power diode laser systems is an important method to increase the efficiency of diode pumped solid-state lasers. It also enables power scaling by dense wavelength multiplexing. To ensure a wide locking range and efficient wavelength stabilization the parameters of the Volume Holographic Grating and the parameters of the diode laser bar have to be adapted carefully. Important parameters are the reflectivity of the Volume Holographic Grating, the reflectivity of the diode laser bar as well as its angular and spectral emission characteristics. In this paper we present detailed data on wavelength stabilized diode laser systems with and without fiber coupling in the spectral range from 634 nm up to 1533 nm. The maximum output power of 2.7 kW was measured for a fiber coupled system (1000 μm, NA 0.22), which was stabilized at a wavelength of 969 nm with a spectral width of only 0.6 nm (90% value). Another example is a narrow line-width diode laser stack, which was stabilized at a wavelength of 1533 nm with a spectral bandwidth below 1 nm and an output power of 835 W.

  1. New enhanced sensitivity infrared laser spectroscopy techniques applied to reactive plasmas and trace gas detection

    NARCIS (Netherlands)

    Welzel, S.

    2009-01-01

    Infrared laser absorption spectroscopy (IRLAS) employing both tuneable diode and quantum cascade lasers (TDLs, QCLs) has been applied with both high sensitivity and high time resolution to plasma diagnostics and trace gas measurements. TDLAS combined with a conventional White type multiple pass cell

  2. Use of tunnel diode for nanosecond pulse amplification; Utilisation de la diode tunnel pour l'amplification d'impulsions nanosecondes

    Energy Technology Data Exchange (ETDEWEB)

    Chartier, P [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

    1970-07-01

    In a first part, after a brief review of tunnel diode properties, the paper presents graphic and analytic investigations of series, shunt and compound connected tunnel diode amplifiers. A study of the noise problem is given. In a second part, practical realizations are described and results of measurements of their gain and noise characteristics are presented. (author) [French] Une premiere partie presente, apres une breve revue des proprietes de la diode tunnel, une etude graphique et analytique des amplificateurs a diode tunnel, pour les configurations serie, parallele et serie-parallele. Le bruit de fond y est egalement etudie. La seconde partie decrit quelques realisations pratiques et indique les resultats des mesures effectuees sur le gain et le bruit de fond. (auteur)

  3. Diode Laser Application in Soft Tissue Oral Surgery

    Science.gov (United States)

    Azma, Ehsan; Safavi, Nassimeh

    2013-01-01

    Introduction: Diode laser with wavelengths ranging from 810 to 980 nm in a continuous or pulsed mode was used as a possible instrument for soft tissue surgery in the oral cavity. Discussion: Diode laser is one of laser systems in which photons are produced by electric current with wavelengths of 810, 940 and 980nm. The application of diode laser in soft tissue oral surgery has been evaluated from a safety point of view, for facial pigmentation and vascular lesions and in oral surgery excision; for example frenectomy, epulis fissuratum and fibroma. The advantages of laser application are that it provides relatively bloodless surgical and post surgical courses with minimal swelling and scarring. We used diode laser for excisional biopsy of pyogenic granuloma and gingival pigmentation. Conclusion: The diode laser can be used as a modality for oral soft tissue surgery PMID:25606331

  4. High Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    NWs were contacted in a NW-FET setup. Electrical measurements at room temperature display typical tunnel diode behavior, with a Peak-to-Valley Current Ratio (PVCR) as high as 8.2 and a peak current density as high as 329 A/cm2. Low temperature measurements show improved PVCR of up to 27.6....... is the tunnel (Esaki) diode, which provides a low-resistance connection between junctions. We demonstrate an InP-GaAs NW axial heterostructure with tunnel diode behavior. InP and GaAs can be readily n- and p-doped, respectively, and the heterointerface is expected to have an advantageous type II band alignment...

  5. Ultrafast photoconductor detector-laser-diode transmitter

    International Nuclear Information System (INIS)

    Wang, C.L.; Davis, B.A.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.

    1987-01-01

    We report the results of an experiment in which we used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When we irradiated the neutron-damaged Cr-doped GaAs detector with 17-MeV electron beams, the temporal response was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. We are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

  6. Solid density, low temperature plasma formation in a capillary discharge

    International Nuclear Information System (INIS)

    Kania, D.R.; Jones, L.A.; Maestas, M.D.; Shepherd, R.L.

    1987-01-01

    This work discusses the ability of the authors to produce solid density, low temperature plasmas in polyurethane capillary discharges. The initial capillary diameter is 20 μm. The plasma is produced by discharging a one Ohm parallel plate waterline and Marx generator system through the capillary. A peak current of 340 kA in 300 ns heats the inner wall of the capillary, and the plasma expands into the surrounding material. The authors studied the evolution of the discharge using current and voltage probes, axial and radial streak photography, axial x-ray diode array and schlieren photography, and have estimated the peak temperature of the discharge to be approximately 10 eV and the density to be near 10/sup 23/cm/sup -3/. This indicates that the plasma may approach the strongly coupled regime. They discuss their interpretation of the data and compare their results with theoretical models of the plasma dynamics

  7. Topical Conference on High Temperature Plasma Diagnostics, 7th, Napa, CA, Mar. 13-17, 1988, Proceedings

    International Nuclear Information System (INIS)

    Luhmann, N.C. Jr.; Peebles, W.A.

    1988-01-01

    Various papers concerning scientific instruments are presented. The general topics addressed include: laser scattering and optical diagnostics, collective scattering and interferometry, millimeter wave and current profile measurements, particle-based diagnostics, data acquisition and analysis, X-ray diagnostics, and particle- and photon-based diagnostics. Individual subjects discussed include: atomic hydrogen density measurements in an ion source plasma using VUV absorption spectrometer, resonant diagnostics of laser-produced Ba plasmas, radiative and diffusional effects to the population densities of the excited-state atoms in hydrogen plasma, and Watt-level millimeter-wave monolithic diode-grid frequency multipliers

  8. XUV preionization effects in high power magnetically insulated diodes

    International Nuclear Information System (INIS)

    Maenchen, J.; Woodworth, J.R.; Foltz, B.W.

    1985-01-01

    Electrode surface desorption and photoionization by an intense XUV pulse has been shown to dramatically improve a vacuum diode impedance history. The 6-Terawatt Applied-B ion diode experiment on PBFA I is limited by a delay in both diode and ion current initiation. The insulation magnetic field impedes electron crossings which are believed to aid the ion source initiation. The diode is therefore initially a severe overmatch to the accelerator 40-nsec, 2.2-MV, 0.5-ohm pulse. The diode current increases during the pulse, leading to a rapidly falling impedance history. The application of an intense (30 to 50-kW/cm 2 ) XUV flux from an array of sixteen 60-kA spark sources is found to cause immediate diode current flow, resulting in both a greatly improved impedance history and the prompt initiation of an intense higher power ion beam

  9. A single-molecule diode

    Science.gov (United States)

    Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

    2005-01-01

    We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current–voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur–gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current–voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current–voltage characteristics, similar to the phenomena in a semiconductor diode. PMID:15956208

  10. Final report for EDI energy conservation with diode light; Slutrapport for EDI energibesparelser med diodelys

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2006-07-01

    The aim of this project has been to develop technological knowledge and a competence platform for utilization of new light emitting diode technology for general lighting purposes. Furthermore the project has aimed at developing a 3 W light diode bulb to replace 15-20 W filament bulbs and halogen spotlights, and thereby demonstrating a large energy conservation potential in the use of LED technology for lighting purposes. (BA)

  11. Experimental observations on long pulse intense ion diode operation

    International Nuclear Information System (INIS)

    Prono, D.S.; Clark, R.; Prestwich, K.

    1976-01-01

    An experiment in which a long pulse electron beam diode is converted to a reflex ion diode is reported. The results further substantiate the model of reflex ion diode behavior as well as extend the duration of ion mode operation to greater than 500 nsec

  12. High power diode lasers converted to the visible

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Andersen, Peter E.

    2017-01-01

    High power diode lasers have in recent years become available in many wavelength regions. However, some spectral regions are not well covered. In particular, the visible spectral range is lacking high power diode lasers with good spatial quality. In this paper, we highlight some of our recent...... results in nonlinear frequency conversion of high power near infrared diode lasers to the visible spectral region....

  13. Phase-change radiative thermal diode

    OpenAIRE

    Ben-Abdallah, Philippe; Biehs, Svend-Age

    2013-01-01

    A thermal diode transports heat mainly in one preferential direction rather than in the opposite direction. This behavior is generally due to the non-linear dependence of certain physical properties with respect to the temperature. Here we introduce a radiative thermal diode which rectifies heat transport thanks to the phase transitions of materials. Rectification coefficients greater than 70% and up to 90% are shown, even for small temperature differences. This result could have important ap...

  14. Crosstalk of HgCdTe LWIR n-on-p diode arrays

    International Nuclear Information System (INIS)

    Sun Yinghui; Zhang Bo; Yu Meifang; Liao Qingjun; Zhang Yan; Wen Xin; Jiang Peilu; Hu Xiaoning; Dai Ning

    2009-01-01

    Crosstalk of HgCdTe long-wavelength infrared (LWIR) n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area (optically sensitive area) is also measured and discussed.

  15. Study of Pulsed vs. RF Plasma Properties for Surface Processing Applications

    Science.gov (United States)

    Tang, Ricky; Hopkins, Matthew; Barnat, Edward; Miller, Paul

    2015-09-01

    The ability to manipulate the plasma parameters (density, E/N) was previously demonstrated using a double-pulsed column discharge. Experiments extending this to large-surface plasmas of interest to the plasma processing community were conducted. Differences between an audio-frequency pulsed plasma and a radio-frequency (rf) discharge, both prevalent in plasma processing applications, were studied. Optical emission spectroscopy shows higher-intensity emission in the UV/visible range for the pulsed plasma comparing to the rf plasma at comparable powers. Data suggest that the electron energy is higher for the pulsed plasma leading to higher ionization, resulting in increased ion density and ion flux. Diode laser absorption measurements of the concentration of the 1S5 metastable and 1S4 resonance states of argon (correlated with the plasma E/N) provide comparisons between the excitation/ionization states of the two plasmas. Preliminary modeling efforts suggest that the low-frequency polarity switch causes a much more abrupt potential variation to support interesting transport phenomena, generating a ``wave'' of higher temperature electrons leading to more ionization, as well as ``sheath capture'' of a higher density bolus of ions that are then accelerated during polarity switch.

  16. Linear variable voltage diode capacitor and adaptive matching networks

    NARCIS (Netherlands)

    Larson, L.E.; De Vreede, L.C.N.

    2006-01-01

    An integrated variable voltage diode capacitor topology applied to a circuit providing a variable voltage load for controlling variable capacitance. The topology includes a first pair of anti-series varactor diodes, wherein the diode power-law exponent n for the first pair of anti-series varactor

  17. Simulations of Large-Area Electron Beam Diodes

    Science.gov (United States)

    Swanekamp, S. B.; Friedman, M.; Ludeking, L.; Smithe, D.; Obenschain, S. P.

    1999-11-01

    Large area electron beam diodes are typically used to pump the amplifiers of KrF lasers. Simulations of large-area electron beam diodes using the particle-in-cell code MAGIC3D have shown the electron flow in the diode to be unstable. Since this instability can potentially produce a non-uniform current and energy distribution in the hibachi structure and lasing medium it can be detrimental to laser efficiency. These results are similar to simulations performed using the ISIS code.(M.E. Jones and V.A. Thomas, Proceedings of the 8^th) International Conference on High-Power Particle Beams, 665 (1990). We have identified the instability as the so called ``transit-time" instability(C.K. Birdsall and W.B. Bridges, Electrodynamics of Diode Regions), (Academic Press, New York, 1966).^,(T.M. Antonsen, W.H. Miner, E. Ott, and A.T. Drobot, Phys. Fluids 27), 1257 (1984). and have investigated the role of the applied magnetic field and diode geometry. Experiments are underway to characterize the instability on the Nike KrF laser system and will be compared to simulation. Also some possible ways to mitigate the instability will be presented.

  18. Effect of anomalous resistivity on the dynamics of plasma switching

    Energy Technology Data Exchange (ETDEWEB)

    Kingsep, A [Kurchatov Institute, Moscow (Russian Federation); Munier, A [Centre d` Etudes Limeil-Vaneton, Villeneuve St. Georges (France)

    1997-12-31

    Some of the conditions for electron MHD are recollected, and it is shown how this leads to anomalous resistivity which may play an important role in the dynamics of POS. It has been shown that not only the order of value of the resistance of the plasma-filled diode but rather basic scalings have to be changed in the regime of essential anomalous resistivity. (author). 11 refs.

  19. Ultrafast photoconductive detector-laser-diode transmitter

    International Nuclear Information System (INIS)

    Wang, C.L.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.; Davis, B.A.

    1987-01-01

    The authors report the results of an experiment in which they used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When they irradiated the neutron-damaged Cr-doped Ga/As detector with 17-MeV electron beams, the temporal response of was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. They are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

  20. Plasma production and heating by a laser TEA-CO2

    International Nuclear Information System (INIS)

    Goes, L.C.S.; Sudano, J.P.; Rodrigues, N.A.S.

    1987-01-01

    Preliminary experiments of plasma production and heating by laser irradiation of gases and solid targets have been performed with a laser TEA-CO 2 (1 MW, 80 ns, monomode), developed and built at the IEAv/Laser Laboratory. The laser beam was focused in the interior of a vacuum chamber (100 1) with a base pressure of 10 1 torr, and recolimated by a system of confocal lenses. The breakdown theresholds for nitrogen gas was investigated by varying the laser power, the neutral gas density and the focal lenght of the lenses. Plasma breakdown observed in the range of pressures between 100-720 torr was in good agreement with calculations of cascade ionization theory and classical absorption by inverse-Bremsstrahlung. The laser absorption was inferred by measuring the power transmitted in the presence and absence of plasma. The light emitted by the plasma was detected by a fast photo-diode, indicating that the plasma expansion phase lasted for several microseconds. These investigations have been applied in the development of plasma shutters for laser pulse compression. (author) [pt

  1. Destructive Single-Event Effects in Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Campola, Michael J.; Wilcox, Edward P.; Phan, Anthony M.; Label, Kenneth A.

    2017-01-01

    In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.

  2. Design and experimental testing of air slab caps which convert commercial electron diodes into dual purpose, correction-free diodes for small field dosimetry.

    Science.gov (United States)

    Charles, P H; Cranmer-Sargison, G; Thwaites, D I; Kairn, T; Crowe, S B; Pedrazzini, G; Aland, T; Kenny, J; Langton, C M; Trapp, J V

    2014-10-01

    Two diodes which do not require correction factors for small field relative output measurements are designed and validated using experimental methodology. This was achieved by adding an air layer above the active volume of the diode detectors, which canceled out the increase in response of the diodes in small fields relative to standard field sizes. Due to the increased density of silicon and other components within a diode, additional electrons are created. In very small fields, a very small air gap acts as an effective filter of electrons with a high angle of incidence. The aim was to design a diode that balanced these perturbations to give a response similar to a water-only geometry. Three thicknesses of air were placed at the proximal end of a PTW 60017 electron diode (PTWe) using an adjustable "air cap". A set of output ratios (ORDet (fclin) ) for square field sizes of side length down to 5 mm was measured using each air thickness and compared to ORDet (fclin) measured using an IBA stereotactic field diode (SFD). kQclin,Qmsr (fclin,fmsr) was transferred from the SFD to the PTWe diode and plotted as a function of air gap thickness for each field size. This enabled the optimal air gap thickness to be obtained by observing which thickness of air was required such that kQclin,Qmsr (fclin,fmsr) was equal to 1.00 at all field sizes. A similar procedure was used to find the optimal air thickness required to make a modified Sun Nuclear EDGE detector (EDGEe) which is "correction-free" in small field relative dosimetry. In addition, the feasibility of experimentally transferring kQclin,Qmsr (fclin,fmsr) values from the SFD to unknown diodes was tested by comparing the experimentally transferred kQclin,Qmsr (fclin,fmsr) values for unmodified PTWe and EDGEe diodes to Monte Carlo simulated values. 1.0 mm of air was required to make the PTWe diode correction-free. This modified diode (PTWeair) produced output factors equivalent to those in water at all field sizes (5-50 mm

  3. Overview on new diode lasers for defense applications

    Science.gov (United States)

    Neukum, Joerg

    2012-11-01

    Diode lasers have a broad wavelength range, from the visible to beyond 2.2μm. This allows for various applications in the defense sector, ranging from classic pumping of DPSSL in range finders or target designators, up to pumping directed energy weapons in the 50+ kW range. Also direct diode applications for illumination above 1.55μm, or direct IR countermeasures are of interest. Here an overview is given on some new wavelengths and applications which are recently under discussion. In this overview the following aspects are reviewed: • High Power CW pumps at 808 / 880 / 940nm • Pumps for DPAL - Diode Pumped Alkali Lasers • High Power Diode Lasers in the range market.

  4. Self-magnetically insulated ion diode

    International Nuclear Information System (INIS)

    VanDevender, J.; Quintenz, J.; Leeper, R.; Johnson, D.; Crow, J.

    1981-01-01

    Light ion diodes for producing 1--100 TW ion beams are required for inertial confinement fusion. The theory, numerical simulations, and experiments on a self-magnetically insulated ion diode are presented. The treatment is from the point of view of a self-magnetically insulated transmission line with an ion loss current and differs from the usual treatment of the pinched electron beam diode. The simulations show that the ratio V/IZ 0 =0.25 in such a structure with voltage V, local total current I, and local vacuum wave impedance Z 0 . The ion current density is enhanced by a factor of approximately 2 over the simple space-charge limited value. The simulation results are verified in an experiment. An analytical theory is then presented for scaling the results to produce a focused beam of protons with a power of up to 10 13 W

  5. Sausage instabilities stabilized by radial motion in Z-discharged plasma channel for beam propagation in LIB-fusion

    International Nuclear Information System (INIS)

    Murakami, Hiroyuki; Kawata, Shigeo; Niu, Keishiro.

    1983-01-01

    The stability of current-carrying plasma channels, which have been proposed for transporting intense ion beams from the diodes to the target in LIB-fusion devices, is discussed. The growth rate of the most dangerous surface mode, that is, the axisymmetric sausage instabilities, are examined for plasma channels with or without radial fluid motion. The growth rate of the channel with radial fluid motion is shown to be far smaller than that of the channel with no fluid motion. It is concluded that a stable plasma channel can be formed by radial fluid motion. (author)

  6. Polycrystalline Diamond Schottky Diodes and Their Applications.

    Science.gov (United States)

    Zhao, Ganming

    In this work, four-hot-filament CVD techniques for in situ boron doped diamond synthesis on silicon substrates were extensively studied. A novel tungsten filament shape and arrangement used to obtain large-area, uniform, boron doped polycrystalline diamond thin films. Both the experimental results and radiative heat transfer analysis showed that this technique improved the uniformity of the substrate temperature. XRD, Raman and SEM studies indicate that large area, uniform, high quality polycrystalline diamond films were obtained. Schottky diodes were fabricated by either sputter deposition of silver or thermal evaporation of aluminum or gold, on boron doped diamond thin films. High forward current density and a high forward-to-reverse current ratio were exhibited by silver on diamond Schottky diodes. Schottky barrier heights and the majority carrier concentrations of both aluminum and gold contacted diodes were determined from the C-V measurements. Furthermore, a novel theoretical C-V-f analysis of deep level boron doped diamond Schottky diodes was performed. The analytical results agree well with the experimental results. Compressive stress was found to have a large effect on the forward biased I-V characteristics of the diamond Schottky diodes, whereas the effect on the reverse biased characteristics was relatively small. The stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. This result shows that CVD diamond device has potential for mechanical transducer applications. The quantitative photoresponse characteristics of the diodes were studied in the spectral range of 300 -1050 nm. Semi-transparent gold contacts were used for better photoresponse. Quantum efficiency as high as 50% was obtained at 500 nm, when a reverse bias of over 1 volt was applied. The Schottky barrier heights between either gold or

  7. Radiation resistant quench protection diodes for the LHC

    International Nuclear Information System (INIS)

    Hagedorn, D.; Coull, L.

    1994-01-01

    The quench protection diodes for the proposed Large Hadron Collider at CERN will be located inside the He-II vessel of the short straight section of one half cell, where they could be exposed to a radiation dose of about 50 kGy and a total neutron fluence of about 10 15 n/cm 2 over 10 years at temperatures of about 2 K. To investigate the influence of irradiation on the electrical characteristics of the diodes, newly developed diodes of thin base region of the diffusion type and of the epitaxial type have been submitted to irradiation tests at liquid nitrogen temperature in a target area of the SPS accelerator at CERN. The degradation of the electrical characteristics of the diodes for a radiation dose up to about 20 kGy and neutron fluence of up to about 5 10 14 n/cm 2 and the effect of carrier injection and thermal annealing after irradiation have been measured. The test results show that only the thin base diodes of the epitaxial type are really radiation resistant. A compromise must be found between required blocking characteristics and radiation resistance. Annealing by carrier injection and occasional warm up to room temperature can extend the service life of irradiated diodes quite substantially

  8. Cryogenic thermometry with a common diode: type BAS16

    NARCIS (Netherlands)

    Rijpma, A.P.; ter Brake, Hermanus J.M.

    2006-01-01

    Cryogenic test experiments often require a large number of temperatures to be monitored. In order to reduce cost, we investigated the feasibility of low-cost common diodes. We chose the Philips BAS16 diode in a type SOT23 package. By means of Stycast 2850FT, these diodes were glued into alumina

  9. Asymmetric anode and cathode extraction structure fast recovery diode

    Science.gov (United States)

    Xie, Jiaqiang; Ma, Li; Gao, Yong

    2018-05-01

    This paper presents an asymmetric anode structure and cathode extraction fast and soft recovery diode. The device anode is partial-heavily doped and partial-lightly doped. The P+ region is introduced into the cathode. Firstly, the characteristics of the diode are simulated and analyzed. Secondly, the diode was fabricated and its characteristics were tested. The experimental results are in good agreement with the simulation results. The results show that, compared with the P–i–N diode, although the forward conduction characteristic of the diode is declined, the reverse recovery peak current is reduced by 47%, the reverse recovery time is shortened by 20% and the softness factor is doubled. In addition, the breakdown voltage is increased by 10%. Project supported by the National Natural Science Foundation of China (No. 51177133).

  10. High-power green diode laser systems for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André

    propagation parameters and therefore efficiently increases the brightness of compact and cost-effective diode laser systems. The condition of overlapping beams is an ideal scenario for subsequent frequency conversion. Based on sum-frequency generation of two beam combined diode lasers a 3.2 fold increase...... output power of frequency doubled single emitters is limited by thermal effects potentially resulting in laser degradation and failure. In this work new concepts for power scaling of visible diode laser systems are introduced that help to overcome current limitations and enhance the application potential....... Implementing the developed concept of frequency converted, beam combined diode laser systems will help to overcome the high pump thresholds for ultrabroad bandwidth titanium sapphire lasers, leading towards diode based high-resolution optical coherence tomography with enhanced image quality. In their entirety...

  11. Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes

    Energy Technology Data Exchange (ETDEWEB)

    Guan-Hung Shen [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Hong, Franklin Chau-Nan, E-mail: hong@mail.ncku.edu.tw [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); NCKU Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (China)

    2014-11-03

    A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10{sup −4} A at − 20 V bias, a forward current of 7.2 × 10{sup −3} A at 20 V bias, and the turn-on voltage at around 5.6 V. - Highlights: • High-quality zinc oxide layer was epitaxially grown on gallium nitride nanorods. • The morphology of zinc oxide can be controlled by varying the growth conditions. • The n-zinc oxide/p-gallium nitride diodes with rectifying behavior were fabricated.

  12. Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes

    International Nuclear Information System (INIS)

    Guan-Hung Shen; Hong, Franklin Chau-Nan

    2014-01-01

    A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on the morphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaN NRs were single crystals with the growth orientation along [0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 × 10 −4 A at − 20 V bias, a forward current of 7.2 × 10 −3 A at 20 V bias, and the turn-on voltage at around 5.6 V. - Highlights: • High-quality zinc oxide layer was epitaxially grown on gallium nitride nanorods. • The morphology of zinc oxide can be controlled by varying the growth conditions. • The n-zinc oxide/p-gallium nitride diodes with rectifying behavior were fabricated

  13. Cryogenic thermometry with a common diode: Type BAS16

    NARCIS (Netherlands)

    Rijpma, A.P.; Brake, ter H.J.M.

    2006-01-01

    Cryogenic test expts. often require a large no. of temps. to be monitored. In order to reduce cost, we investigated the feasibility of low-cost common diodes. We chose the Philips BAS16 diode in a type SOT23 package. By means of Stycast 2850FT, these diodes were glued into alumina holders. In total,

  14. Production of molecules on a surface under plasma exposure: example of NO on pyrex

    International Nuclear Information System (INIS)

    Marinov, D; Guaitella, O; Rousseau, A; Ionikh, Y

    2010-01-01

    We propose a new experimental approach to the study of surface-catalysed nitric oxide production under plasma exposure. Stable nitrogen species are grafted to the surface of a pyrex discharge tube during N 2 plasma pretreatment. These species are trapped by surface active sites and on being exposed to O 2 plasma, they initiate the production of NO molecules, which are detected using tunable diode laser absorption spectroscopy. Supposing that nitrogen species are adsorbed N atoms, we estimate the initial surface coverage as [N ads ] = 3 x 10 13 cm -2 . This gives an assessment of the lower boundary of the density of surface active sites.

  15. High Power High Efficiency Diode Laser Stack for Processing

    Science.gov (United States)

    Gu, Yuanyuan; Lu, Hui; Fu, Yueming; Cui, Yan

    2018-03-01

    High-power diode lasers based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. As diode laser is simple in structure, small size, longer life expectancy with the advantages of low prices, it is widely used in the industry processing, such as heat treating, welding, hardening, cladding and so on. Respectively, diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. At this power level, it can have many important applications, such as surgery, welding of polymers, soldering, coatings and surface treatment of metals. But there are some applications, which require much higher power and brightness, e.g. hardening, key hole welding, cutting and metal welding. In addition, High power diode lasers in the military field also have important applications. So all developed countries have attached great importance to high-power diode laser system and its applications. This is mainly due their low performance. In this paper we will introduce the structure and the principle of the high power diode stack.

  16. Next generation diode lasers with enhanced brightness

    Science.gov (United States)

    Ried, S.; Rauch, S.; Irmler, L.; Rikels, J.; Killi, A.; Papastathopoulos, E.; Sarailou, E.; Zimer, H.

    2018-02-01

    High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF's diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer's shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).

  17. High-power direct diode laser output by spectral beam combining

    Science.gov (United States)

    Tan, Hao; Meng, Huicheng; Ruan, Xu; Du, Weichuan; Wang, Zhao

    2018-03-01

    We demonstrate a spectral beam combining scheme based on multiple mini-bar stacks, which have more diode laser combining elements, to increase the combined diode laser power and realize equal beam quality in both the fast and slow axes. A spectral beam combining diode laser output of 1130 W is achieved with an operating current of 75 A. When a 9.6 X de-magnifying telescope is introduced between the output mirror and the diffraction grating, to restrain cross-talk among diode laser emitters, a 710 W spectral beam combining diode laser output is achieved at the operating current of 70 A, and the beam quality on the fast and slow axes of the combined beam is about 7.5 mm mrad and 7.3 mm mrad respectively. The power reduction is caused by the existence of a couple resonator between the rear facet of the diode laser and the fast axis collimation lens, and it should be eliminated by using diode laser chips with higher front facet transmission efficiency and a fast axis collimation lens with lower residual reflectivity.

  18. Measurements of sulfur compounds in CO2 by diode laser atomic absorption spectrometry

    International Nuclear Information System (INIS)

    Franzke, J.; Stancu, D.G.; Niemax, K.

    2003-01-01

    Two simple methods for the analysis of the total concentration of sulfur in CO 2 by diode laser atomic absorption spectrometry of excited, metastable sulfur atoms in a direct current discharge are presented. In the first method, the CO 2 sample gas is mixed with the plasma gas (Ar or He) while the second is based on reproducible measurements of the sulfur released from the walls in a helium discharge after being deposited as a result of operating the discharge in pure CO 2 sample gas. The detection limits obtained satisfy the requirements for the control of sulfur compounds in CO 2 used in the food and beverage industry

  19. Conical pinched electron beam diode for intense ion beam source

    International Nuclear Information System (INIS)

    Matsukawa, Yoshinobu; Nakagawa, Yoshiro

    1982-01-01

    For the purpose of improvement of the pinched electron beam diode, the production of an ion beam by a diode with electrodes in a conical shape was studied at low voltage operation (--200 kV). The ion beam is emitted from a small region of the diode apex. The mean ion beam current density near the axis at 12 cm from the diode apex is two or three times that from an usual flat parallel diode with the same dimension and impedance. The brightness and the power brightness at the otigin are 450 MA/cm 2 sr and 0.12 TW/cm 2 sr respectively. (author)

  20. Production of ion beam by conical pinched electron beam diode

    International Nuclear Information System (INIS)

    Matsukawa, Y.; Nakagawa, Y.

    1982-01-01

    Some properties of the ion beam produced by pinched electron beam diode having conical shape electrodes and organic insulator anode was studied. Ion energy is about 200keV and the peak diode current is about 30 kA. At 11cm from the diode apex, not the geometrical focus point, concentrated ion beam was obtained. Its density is more than 500A/cm 2 . The mean ion current density within the radius of 1.6cm around the axis from conical diode is two or three times that from an usual pinched electron beam diode with flat parallel electrodes of same dimension and impedance under the same conditions. (author)

  1. Current in heavy-current planar diode with discrete emission surface

    International Nuclear Information System (INIS)

    Belomyttsev, S.Ya.; Korovin, S.D.; Pegel', I.V

    1999-01-01

    Dependence of current in a high-current planar diode on the size of emission centres was studied. Essential effect of emission surface microstructure on the current value in the planar diode was demonstrated. It was determined that if the distance between the emitter essentially exceeded their size then current dependence on the ratio of size to the value of the diode gap was an exponential function with 3/2 index. Current dependence on voltage obeyed the exponential law with 3/2 index up to higher voltage values in the planar diode with discrete emission surface in contrast to the case of a planar diode with homogeneous emission surface [ru

  2. Disruptive laser diode source for embedded LIDAR sensors

    Science.gov (United States)

    Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

    2017-02-01

    Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources

  3. Durability of PEDOT: PSS-pentacene Schottky diode

    International Nuclear Information System (INIS)

    Kang, K S; Lim, H K; Cho, K Y; Han, K J; Kim, Jaehwan

    2008-01-01

    The durability and failure cause of a polymer Schottky diode made with PEDOT : PSS-pentacene were investigated. A polymer Schottky diode was fabricated by dissolving pentacene in N-methylpyrrolidone (NMP) and mixing with PEDOT : PSS. Pentacene solution having a maximum concentration of approximately 9.7 mmoles was prepared by simply stirring the solution at room temperature for 36 h. As the pentacene concentration increased, the absorption of the broad UV regime increased dramatically. However, absorption peaks of pentacene at 301 and 260 nm were not observed for the PEDOT : PSS-pentacene. A three-layered polymer Schottky diode was fabricated and its current-voltage (I-V) characteristic was evaluated. The current was reduced by 7% in the first 50 min and then stabilized during biased electrical field sweeps. After 500 and 800 min, catastrophic failure occurred. FESEM images revealed that the electrode damage caused catastrophic failure of the Schottky diode. (fast track communication)

  4. Simultaneous Determination of Procainamide and N-acetylprocainamide in Rat Plasma by Ultra-High-Pressure Liquid Chromatography Coupled with a Diode Array Detector and Its Application to a Pharmacokinetic Study in Rats.

    Science.gov (United States)

    Balla, Anusha; Cho, Kwan Hyung; Kim, Yu Chul; Maeng, Han-Joo

    2018-03-30

    A simple, sensitive, and reliable reversed-phase, Ultra-High-Pressure Liquid Chromatography (UHPLC) coupled with a Diode Array Detector (DAD) method for the simultaneous determination of Procainamide (PA) and its major metabolite, N -acetylprocainamide (NAPA), in rat plasma was developed and validated. A simple deproteinization method with methanol was applied to the rat plasma samples, which were analyzed using UHPLC equipped with DAD at 280 nm, and a Synergi™ 4 µm polar, reversed-phase column using 1% acetic acid (pH 5.5) and methanol (76:24, v / v ) as eluent in isocratic mode at a flow rate 0.2 mL/min. The method showed good linearity ( r ² > 0.998) over the concentration range of 20-100,000 and 20-10,000 ng/mL for PA and NAPA, respectively. Intra- and inter-day accuracies ranged from 97.7 to 110.9%, and precision was HPLC methods is that it requires small sample and injection volumes, with a straightforward, one-step sample preparation. It overcomes the limitations of previous methods, which use large sample volume and complex sample preparation. The devised method was successfully applied to the quantification of PA and NAPA after an intravenous bolus administration of 10 mg/kg procainamide hydrochloride to rats.

  5. Effect of oxygen plasma on field emission characteristics of single-wall carbon nanotubes grown by plasma enhanced chemical vapour deposition system

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid; Zulfequar, Mohammad [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Harsh [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India); Husain, Mushahid, E-mail: mush-reslab@rediffmail.com [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India)

    2014-02-28

    Field emission properties of single wall carbon nanotubes (SWCNTs) grown on iron catalyst film by plasma enhanced chemical vapour deposition system were studied in diode configuration. The results were analysed in the framework of Fowler-Nordheim theory. The grown SWCNTs were found to be excellent field emitters, having emission current density higher than 20 mA/cm{sup 2} at a turn-on field of 1.3 V/μm. The as grown SWCNTs were further treated with Oxygen (O{sub 2}) plasma for 5 min and again field emission characteristics were measured. The O{sub 2} plasma treated SWCNTs have shown dramatic improvement in their field emission properties with emission current density of 111 mA/cm{sup 2} at a much lower turn on field of 0.8 V/μm. The as grown as well as plasma treated SWCNTs were also characterized by various techniques, such as scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy before and after O{sub 2} plasma treatment and the findings are being reported in this paper.

  6. Pellet-plasma interaction studies at ASDEX Upgrade

    International Nuclear Information System (INIS)

    Kocsis, G.; Belonohy, E.; Gal, K.; Kalvin, S.; Veres, G.; Lang, P.T.

    2005-01-01

    Pellets produced from cryogenic hydrogen isotopes are used for efficient plasma refueling. Beyond this 'classical' application, pellets pacing the frequency of Edge Localized Modes (ELMs) turned out to be a suitable technique to mitigate the power load on plasma facing components. Although pellet pacing is already integrated in the toolkit for plasma control, its underlying physics is still poorly understood. For investigations aiming to resolve where and how an ELM is triggered by the pellet imposed local perturbation precise knowledge of the ablation profile is required. This renewed and even boosted the interest to understand the interaction of pellets with the hot ambient plasma. Both the investigation of the pellet ablation and also its impact on the target plasma were highlighted. Dedicated investigations require precise information both in the space and time domain. E. g. it is necessary to determine the localization of the pellet at the moment it triggers the ELM as well as the actual imposed 3D distribution of the pellet cloud and its mass deposition profile. By these means, a spatial distribution can be mapped out for a local perturbation of the plasma sufficient to release ELMs. High resolution ablation profile and pellet path measurements at different pellet parameters (mass and velocity) could also help to understand the mechanism of the ELM triggering. Recently pellet-plasma interaction is intensively investigated both experimentally at ASDEX Upgrade tokamak and theoretically based on the obtained experimental data. To gain detailed information an observation system was developed at ASDEX Upgrade consisting of digital cameras that detect the pellet cloud distribution and photo diodes that measure the time evolution of the light emission. The great variety of possible combinations of different images, timings and wavelength selections makes the detection sophisticated. Combination of triggered fast camera images and photo diode signals also enables us

  7. Nonimaging concentrators for diode-pumped slab lasers

    Science.gov (United States)

    Lacovara, Philip; Gleckman, Philip L.; Holman, Robert L.; Winston, Roland

    1991-10-01

    Diode-pumped slab lasers require concentrators for high-average power operation. We detail the properties of diode lasers and slab lasers which set the concentration requirements and the concentrator design methodologies that are used, and describe some concentrator designs used in high-average power slab lasers at Lincoln Laboratory.

  8. Development of a semiconductor neutron dosimeter with a PIN diode

    International Nuclear Information System (INIS)

    Kim, Seungho; Lee, Namho; Cho, Jaiwan; Youk, Geunuck

    2004-01-01

    When a Si PIN diode is exposed to fast neutrons, it produces displacement in Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed, and multi PIN diode arrays with various intrinsic layer (I layer) thicknesses and cross sections were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have good characteristics of linearity in a neutron irradiation experiment and give results that the increase of thickness of I layer and the decrease of the cross-section of the PIN diodes improve the sensitivity. Newly developed PIN diodes with a thicker I layer and various cross sections were retested and showed the best neutron sensitivity in the condition that the I layer thickness was similar to the length of a side of the cross-section. On the basis of two test results, final PIN diodes with a rectangular shape were manufactured and the characteristics for neutron detectors were analyzed through the neutron beam test using the on-line electronic dosimetry system. The developed PIN diode shows a good linearity to absorbed dose in the range of 0 to 1,000cGy (Tissue) and its neutron sensitivity is 13 mV/cGy at a constant current of 5 mA, that is three higher than that of similar commercially developed neutron detectors. Moreover the device shows less dependency on the orientation of the neutron beam and a considerable stability in an annealing test for a long period. (author)

  9. Patient dosimetry quality assurance program with a commerical diode system

    International Nuclear Information System (INIS)

    Lee, P.C.; Sawicka, J.M.; Glasgow, G.P.

    1994-01-01

    The purpose was to evaluate a commercial silicone diode dosimeter for a patient dosimetry quality assurance program. The diode dosimeter was calibrated against an ion chamber, and percentage depth dose, linearity, anisotrophy, virtual source position, and field size factor studies were performed. Correction factors for lack of full scatter medium in the diode entrance and exit dose measurements were acquired. Dosimetry equations were proposed for calculation of dose delivered at isocenter. Diode dose accuracy and reproducibility were tested on phantom and on four patients. A patient dosimetry quality assurance program based on diode-measured dose was instituted and patient dose data were collected. Diode measured percentage depth dose and field factors agreed to within 3% with those measured with an ion chamber. The diode exhibited less than 1.7% angular dose anisotrophy and less than 0.5% nonlinearity up to 4 Gy. Diode dose measurements in phantom showed that the calculated doses differed from the prescribed dose by less than 1.%; the diode exhibited a daily dose reproducibility of better than 0.2%. On four selected patients, the measured dose reproducibility was 1.5%; the average calculated doses were all within ± 7% of the prescribed doses. For 33 of 40 patients treated with a 6 MW beam, measured doses were within ± 7% of the prescribed doses. For 11 out of 12 patients, a second repeat measurements yielded doses within ± 7% of the prescribed doses. The proposed diode-based patient dosimetry quality assurance program with dose tolerance at ± 7% is simple and feasible. It is capable of detecting certain serious treatment errors such as incorrect daily dose greater than 7%, incorrect wedge use, incorrect photon energy and patient setup errors involving some incorrect source-to-surface-distance vs. source-to-axis-distance treatments. 13 refs., 5 figs., 5 tabs

  10. Laser diagnostics on magnetically insulated flashover pulsed ion diodes

    International Nuclear Information System (INIS)

    Horioka, K.; Tazima, N.; Fukui, T.; Kasuya, K.

    1989-01-01

    Our recent experimental results on the characteristics of a flashover-type applied-B magnetically insulated pulsed ion diode are described. The main issues are to investigate the cause of impurity of the extracted beam and to examine the effect of neutral particles on the diode characteristics. In the experiment, our main efforts were placed on laser diagnostics of the diode gap behavior. (author)

  11. Photoluminescence excitation measurements using pressure-tuned laser diodes

    Science.gov (United States)

    Bercha, Artem; Ivonyak, Yurii; Medryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard

    2015-06-01

    Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available.

  12. Photoluminescence excitation measurements using pressure-tuned laser diodes

    International Nuclear Information System (INIS)

    Bercha, Artem; Ivonyak, Yurii; Mędryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard

    2015-01-01

    Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available

  13. Detection of x-rays emitted from a plasma focus device with energy of 2.8 KJ, and its applications in plasma diagnostic and radiography

    International Nuclear Information System (INIS)

    AL-Hawat, Sh.; Akel, M.

    2011-06-01

    The local plasma focus device was modified by replacing the old capacitors (25μF,20 kV ,1.43μH ) and the open spark gap by new capacitors with (25μF,20 kV ,200 nH ) and a new closed spark gap, so instead of a current of 50 kA as a maximum value we obtained a maximum current about 120 kA. The modified device is capable now to generate x-rays, which was confirmed by taking some radiographies for metallic pieces, electronic elements and others . In addition to that some diagnostics were carried out on the device using Ohm voltage divider to record voltage curves, Rogovskii coil for measuring the current, and five channel diodes to evaluate the temporal evolution of x-rays generated in the device working on argon vs. pressure and voltage. The generation of the soft x-ray emission in a low energy 2.8 kJ plasma focus device operated with argon using a detector of five PIN-Si BPX-65 diodes filtered with different foils of Mylar, Al and Cu. Spectral analysis using the recorded x-ray signals ratio method shows that there are two components in the x-ray emissions: one arising from the focused argon plasma with temperature of 2.5 keV and the other arising from the electron beam activity on copper anode, where the second component is predominant in most of investigated experiments due to the used of solid anode. Numerical experiments were carried out using five phases radiative Lee model RADPF5.15d-dd with N 2 , O 2 , Ar, Ne gases on plasma focus device AECS PF1-2 (or PF SY1-2) for its characterization and soft x-ray optimization. (author)

  14. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    International Nuclear Information System (INIS)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-01

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency (η TPV ) and a power density (PD) of η TPV = 19% and PD=0.58 W/cm 2 were measured for T radiator = 950 C and T diode = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be η TPV = 26% and PD = 0.75 W/cm 2 . These limits are extended to η TPV = 30% and PD = 0.85W/cm 2 if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are ∼10

  15. Active stabilization of a diode laser injection lock.

    Science.gov (United States)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-06-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  16. Multi-kW high-brightness fiber coupled diode laser based on two dimensional stacked tailored diode bars

    Science.gov (United States)

    Bayer, Andreas; Unger, Andreas; Köhler, Bernd; Küster, Matthias; Dürsch, Sascha; Kissel, Heiko; Irwin, David A.; Bodem, Christian; Plappert, Nora; Kersten, Maik; Biesenbach, Jens

    2016-03-01

    The demand for high brightness fiber coupled diode laser devices in the multi kW power region is mainly driven by industrial applications for materials processing, like brazing, cladding and metal welding, which require a beam quality better than 30 mm x mrad and power levels above 3kW. Reliability, modularity, and cost effectiveness are key factors for success in the market. We have developed a scalable and modular diode laser architecture that fulfills these requirements through use of a simple beam shaping concept based on two dimensional stacking of tailored diode bars mounted on specially designed, tap water cooled heat sinks. The base element of the concept is a tailored diode laser bar with an epitaxial and lateral structure designed such that the desired beam quality in slow-axis direction can be realized without using sophisticated beam shaping optics. The optical design concept is based on fast-axis collimator (FAC) and slow-axis collimator (SAC) lenses followed by only one additional focusing optic for efficient coupling into a 400 μm fiber with a numerical aperture (NA) of 0.12. To fulfill the requirements of scalability and modularity, four tailored bars are populated on a reduced size, tap water cooled heat sink. The diodes on these building blocks are collimated simply via FAC and SAC. The building blocks can be stacked vertically resulting in a two-dimensional diode stack, which enables a compact design of the laser source with minimum beam path length. For a single wavelength, up to eight of these building blocks, implying a total of 32 tailored bars, can be stacked into a submodule, polarization multiplexed, and coupled into a 400 μm, 0.12NA fiber. Scalability into the multi kW region is realized by wavelength combining of replaceable submodules in the spectral range from 900 - 1100 nm. We present results of a laser source based on this architecture with an output power of more than 4 kW and a beam quality of 25 mm x mrad.

  17. Common rectifier diodes in temperature measurement applications below 50 K

    International Nuclear Information System (INIS)

    Jaervelae, J; Stenvall, A; Mikkonen, R

    2010-01-01

    In this paper we studied the use of common electronic semiconductor diodes in temperature measurements at cryogenic atmosphere. The motivation for this is the high price of calibrated cryogenic temperature sensors since there are some applications, like quench detection, in which a cheaper and a less accurate sensor would suffice. We measured the forward voltage as a function of temperature, V f (T), of several silicon rectifier diodes to determine the accuracy and interchangeability of the diodes. The experimental results confirmed that V f (T) of common rectifier diodes are similar to cryogenic sensor diodes, but the variability between two samples is much larger. The interchangeability of the diodes proved to be poor if absolute temperatures are to be measured. However for sensing changes in temperature they proved to be adequate and thus can be used to measure e.g. quench propagation or sense quench ignition at multiple locations with cheap price.

  18. Design, fabrication and testing of a thermal diode

    Science.gov (United States)

    Swerdling, B.; Kosson, R.

    1972-01-01

    Heat pipe diode types are discussed. The design, fabrication and test of a flight qualified diode for the Advanced Thermal Control Flight Experiment (ATFE) are described. The review covers the use of non-condensable gas, freezing, liquid trap, and liquid blockage techniques. Test data and parametric performance are presented for the liquid trap and liquid blockage techniques. The liquid blockage technique was selected for the ATFE diode on the basis of small reservoir size, low reverse mode heat transfer, and apparent rapid shut-off.

  19. Anisotropy of ultraviolet radiation of high current discharge in a plasma of exploding wire

    International Nuclear Information System (INIS)

    Bogolyubskij, S.L.

    1987-01-01

    The experiments on exploding thin wires in a diode of a high current generator of relativistic electron beams ''Triton'' have demonstrated that the presence of a hot plasma corona and a colder and denser core is typical for appearing radiation coolled Z-pinch. It is found that for 5-10 ns ultraviolet radiation emmitted by plasma channel has a pronounced axial directivity conditioned by quanta with the energy in the 60-120 eV range. Control experiments have shown that this effect is not connected with various near-electrode phenomena

  20. outcome of diode laser cyclophotocoagulation in neovascular ...

    African Journals Online (AJOL)

    Duke

    including, ruby, ND:YAG, argon, krypton and, more recently, trans scleral cyclophotocoagulation with the diode laser, which has been shown to be more effective with less side effects than the others. The diode laser, 810nm, has. 4,5 greater melanin absorption compared to other lasers. Of the various cyclodestructive laser ...

  1. A small spacecraft for multipoint measurement of ionospheric plasma

    Science.gov (United States)

    Roberts, T. M.; Lynch, K. A.; Clayton, R. E.; Weiss, J.; Hampton, D. L.

    2017-07-01

    Measurement of ionospheric plasma is often performed by a single in situ device or remotely using cameras and radar. This article describes a small, low-resource, deployed spacecraft used as part of a local, multipoint measurement network. A B-field aligned sounding rocket ejects four of these spin-stabilized spacecraft in a cross pattern. In this application, each spacecraft carries two retarding potential analyzers which are used to determine plasma density, flow, and ion temperature. An inertial measurement unit and a light-emitting diode array are used to determine the position and orientation of the devices after deployment. The design of this spacecraft is first described, and then results from a recent test flight are discussed. This flight demonstrated the successful operation of the deployment mechanism and telemetry systems, provided some preliminary plasma measurements in a simple mid-latitude environment, and revealed several design issues.

  2. Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

    Science.gov (United States)

    Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

    2014-10-01

    The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

  3. Performance of EPI diodes as dosimeters for photon beam radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Santos, Thais C. dos; Bizetto, Cesar A., E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Neves-Junior, Wellington F.P.; Haddad, Cecilia M.K. [Hospital Sirio Libanes (HSL), Sao Paulo, SP (Brazil); Goncalves, Josemary A.C.; Bueno, Carmen C. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Pontificia Universidade Catolica de Sao Paulo (PUC-SP), SP (Brazil)

    2011-07-01

    In this work we present the preliminary results about the performance of an epitaxial (EPI) diode as on-line dosimeter for photon beam radiotherapy. The diode used was processed at University of Hamburg on n-type 75 {mu}m thick epitaxial silicon layer grown on a highly doped n-type 300 {mu}m thick Czochralski (Cz) silicon substrate. The measurements were performed with a diode which not received any type of pre-dose. In order to use this device as a dosimeter, it was enclosed in a black polymethylmethacrylate (PMMA) probe. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. During all measurements, the diode was held between PMMA plates, placed at 10.0 cm depth and centered in a radiation field of 10 x 10 cm{sup 2}, with the source-to-surface distance (SSD) kept at 100 cm. The short-term repeatability was measured with photon beams of 6 and 18 MV energy by registering five consecutive current signals for the same radiation dose. The current signals induced showed good instantaneous repeatability of the diode, characterized by a smallest coefficient of variation (CV) of 0.21%. Furthermore, the dose-response curves of the diode were quite linear with the highest charge sensitivity achieved of 5.0 {mu}C/Gy. It worth noting that still remains to be investigated the pre-dose influence on epitaxial silicon diode response in radiotherapy photon beam dosimetry, the long term stability and the radiation hardness of these diodes for absorbed doses higher than that investigated in this work. All these studies are under way. (author)

  4. Active stabilization of a diode laser injection lock

    Energy Technology Data Exchange (ETDEWEB)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep [Department of Physics, University of Washington, P.O. Box 351560, Seattle, Washington 98195-1560 (United States)

    2016-06-15

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  5. Active graphene-silicon hybrid diode for terahertz waves.

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-11

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  6. Active stabilization of a diode laser injection lock

    International Nuclear Information System (INIS)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  7. Laser Induced Fluorescence of Helium Ions in a Helicon Plasma

    Science.gov (United States)

    Compton, C. S.; Biloui, C.; Hardin, R. A.; Keesee, A. M.; Scime, E. E.; Boivin, R.

    2003-10-01

    The lack of a suitable Laser Induced Fluorescence (LIF) scheme for helium ions at visible wavelengths has prevented LIF from being employed in helium plasmas for measurements of ion temperature and bulk ion flow speeds. In this work, we will discuss our attempts to perform LIF of helium ions in a helicon source plasma using an infrared, tunable diode laser operating at 1012.36 nm. The infrared transition corresponds to excitation from the n = 4 level (4f ^2F) to the n = 5 (5g ^2G) level of singly ionized helium and therefore requires substantial electron temperatures (> 10 eV) to maintain an adequate ion population in the n = 4 state. Calculations using a steady state coronal model predict that the n = 4 state population will be 25% larger than the n = 5 population for our experimental conditions. The fluorescence decay from the n = 5 (5f ^2F) level of singly ionized helium level to the n = 3 (3d ^2D) level at 320.31 nm is monitored as the diode laser is swept through 10 GHz around the 1012.36 nm line. Note that the fluorescence emission requires a collisionally coupled transition between two different n = 5 quantum states. We will also present measurements of the emission intensities of both the 1012.36 nm and the 320.31 nm lines as a function of source neutral pressure, rf power, and plasma density. This work supported by the U.S. DoE EPSCoR Lab Partnership Program.

  8. Molecular diodes in optical rectennas

    Science.gov (United States)

    Duché, David; Palanchoke, Ujwol; Terracciano, Luigi; Dang, Florian-Xuan; Patrone, Lionel; Le Rouzo, Judikael; Balaban, Téodore Silviu; Alfonso, Claude; Charai, Ahmed; Margeat, Olivier; Ackermann, Jorg; Gourgon, Cécile; Simon, Jean-Jacques; Escoubas, Ludovic

    2016-09-01

    The photo conversion efficiencies of the 1st and 2nd generat ion photovoltaic solar cells are limited by the physical phenomena involved during the photo-conversion processes. An upper limit around 30% has been predicted for a monojunction silicon solar cell. In this work, we study 3rd generation solar cells named rectenna which could direct ly convert visible and infrared light into DC current. The rectenna technology is at odds with the actual photovoltaic technologies, since it is not based on the use of semi-conducting materials. We study a rectenna architecture consist ing of plasmonic nano-antennas associated with rectifying self assembled molecular diodes. We first opt imized the geometry of plasmonic nano-antennas using an FDTD method. The optimal antennas are then realized using a nano-imprint process and associated with self assembled molecular diodes in 11- ferrocenyl-undecanethiol. Finally, The I(V) characterist ics in darkness of the rectennas has been carried out using an STM. The molecular diodes exhibit averaged rect ification ratios of 5.

  9. Plasma opening switch experiments on the Particle Beam Accelerator II

    International Nuclear Information System (INIS)

    Sweeney, M.A.; McDaniel, D.H.; Mendel, C.W.; Rochau, G.E.; Moore, W.B.S.; Mowrer, G.R.; Simpson, W.W.; Zagar, D.M.; Grasser, T.; McDougal, C.D.

    1989-01-01

    Plasma opening switch (POS) experiments have been done since 1986 on the PBFA-II ion beam accelerator to develop a rugged POS that will open rapidly ( 80%) into a high impedance (> 10 ohm) load. In a recent series of experiments on PBFA II, the authors have developed and tested three different switch designs that use magnetic fields to control and confine the injected plasma. All three configurations couple current efficiently to a 5-ohm electron beam diode. In this experimental series, the PBFA-II Delta Series, more extensive diagnostics were used than in previous switch experiments on PBFA II or on the Blackjack 5 accelerator at Maxwell Laboratories. Data from the experiments with these three switch designs is presented

  10. Spectral perturbations from silicon diode detector encapsulation and shielding in photon fields.

    Science.gov (United States)

    Eklund, Karin; Ahnesjö, Anders

    2010-11-01

    Silicon diodes are widely used as detectors for relative dose measurements in radiotherapy. The common manufacturing practice is to encapsulate the diodes in plastic for protection and to facilitate mounting in scanning devices. Diodes intended for use in photon fields commonly also have a shield of a high atomic number material (usually tungsten) integrated into the encapsulation to selectively absorb low-energy photons to which silicon diodes would otherwise over-response. However, new response models based on cavity theories and spectra calculations have been proposed for direct correction of the readout from unshielded (e.g., "electron") diodes used in photon fields. This raises the question whether it is correct to assume that the spectrum in a water phantom at the location of the detector cavity is not perturbed by the detector encapsulation materials. The aim of this work is to investigate the spectral effects of typical encapsulations, including shielding, used for clinical diodes. The effects of detector encapsulation of an unshielded and a shielded commercial diode on the spectra at the detector cavity location are studied through Monte Carlo simulations with PENELOPE-2005. Variance reduction based on correlated sampling is applied to reduce the CPU time needed for the simulations. The use of correlated sampling is found to be efficient and to not introduce any significant bias to the results. Compared to reference spectra calculated in water, the encapsulation for an unshielded diode is demonstrated to not perturb the spectrum, while a tungsten shielded diode caused not only the desired decrease in low-energy scattered photons but also a large increase of the primary electron fluence. Measurements with a shielded diode in a 6 MV photon beam proved that the shielding does not completely remove the field-size dependence of the detector response caused by the over-response from low-energy photons. Response factors of a properly corrected unshielded diode

  11. Temperature dependent electrical characterisation of Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Shetty, Arjun, E-mail: arjun@ece.iisc.ernet.in; Vinoy, K. J. [Electrical Communication Engineering, Indian Institute of Science, Bangalore, India 560012 (India); Roul, Basanta; Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore, India 560012 (India)

    2015-09-15

    This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO{sub 2} (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diode showed an increase in rectification ratio from 35.9 to 98.9(@ 2V), increase in barrier height (0.52 eV to 0.63eV) and a reduction in ideality factor (2.1 to 1.3) as compared to the MS Schottky. Epitaxial n-type GaN films of thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE). The crystalline and optical qualities of the films were confirmed using high resolution X-ray diffraction and photoluminescence measurements. Metal-semiconductor (Pt/n-GaN) and metal-insulator-semiconductor (Pt/HfO{sub 2}/n-GaN) Schottky diodes were fabricated. To gain further understanding of the Pt/HfO{sub 2}/GaN interface, I-V characterisation was carried out on the MIS Schottky diode over a temperature range of 150 K to 370 K. The barrier height was found to increase (0.3 eV to 0.79 eV) and the ideality factor decreased (3.6 to 1.2) with increase in temperature from 150 K to 370 K. This temperature dependence was attributed to the inhomogeneous nature of the contact and the explanation was validated by fitting the experimental data into a Gaussian distribution of barrier heights.

  12. Preliminary studies on a plasma focus opening switch

    Energy Technology Data Exchange (ETDEWEB)

    Wong, C S; Moo, S P; Singh, J P [Univ. of Malaya, Kuala Lumpur (Malaysia). Physics Dept., Plasma Research Laboratory; Choi, P [Ecole Polytechnique, Palaiseau (France). Laboratoire de Physique des Milieux Ionises

    1997-12-31

    The small plasma focus device UNU/ICTP PFF has been modified to assess the operation of a plasma focus based long conduction (> 2 {mu}s) opening switch, with a plasma filled diode as the load. The UNU/ICTP PFF is a Mather type plasma focus device powered by a single 15 kV, 30 {mu}F capacitor delivering a peak current of 150 kA when discharged at 15 kV. The device has been optimized for reproducible focusing in various gases including deuterium, argon, carbon dioxide, helium as well as in air. In particular, the optimum operating pressure for air is between 0.5 to 1.1 mbar, whereas for argon it is between 0.3 to 3 mbar. For the operation of the UNU/ICTP PFF as an opening switch, the electrode geometry is modified to redirect the plasma motion at the end of the axial rundown phase to avoid the normal plasma focus action, and the operating regime is shifted to low pressure to favour plasma opening switch action. With air as the working gas, pressure as low as 10{sup -3} mbar was tested. At such a low pressure, a set of 12 plasma injection cable guns is used to initiate breakdown of the discharge. The design and operating principle is presented and some preliminary results obtained on the operational characteristics of this device are discussed. (author). 5 figs., 4 refs.

  13. High performance Schottky diodes based on indium-gallium-zinc-oxide

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiawei; Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Xin, Qian [School of Physics, Shandong University, Jinan 250100 (China)

    2016-07-15

    Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in the rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.

  14. High brightness diode lasers controlled by volume Bragg gratings

    Science.gov (United States)

    Glebov, Leonid

    2017-02-01

    Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

  15. Room-temperature spin-polarized organic light-emitting diodes with a single ferromagnetic electrode

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Baofu, E-mail: b.ding@ecu.edu.au; Alameh, Kamal, E-mail: k.alameh@ecu.edu.au [Electron Science Research Institute, Edith Cowan University, 270 Joondalup Drive, Joondalup WA 6027 Australia (Australia); Song, Qunliang [Institute for Clean Energy and Advanced Materials, Southwest University, Chongqing 400715 (China)

    2014-05-19

    In this paper, we demonstrate the concept of a room-temperature spin-polarized organic light-emitting diode (Spin-OLED) structure based on (i) the deposition of an ultra-thin p-type organic buffer layer on the surface of the ferromagnetic electrode of the Spin-OLED and (ii) the use of oxygen plasma treatment to modify the surface of that electrode. Experimental results demonstrate that the brightness of the developed Spin-OLED can be increased by 110% and that a magneto-electroluminescence of 12% can be attained for a 150 mT in-plane magnetic field, at room temperature. This is attributed to enhanced hole and room-temperature spin-polarized injection from the ferromagnetic electrode, respectively.

  16. Sub-keV, subnanosecond measurements of x-ray spectra from laser-produced plasmas

    International Nuclear Information System (INIS)

    Kornblum, H.N.; Koppel, L.N.; Slivinsky, V.W.; Glaros, S.S.; Ahlstrom, H.G.; Larsen, J.T.

    1977-01-01

    As part of the effort to extend our x-ray diagnostic capabilities, we have made x-ray spectral measurements of laser-produced plasmas for photon energies down to 100 eV with a time response of 0.5 nsec. Fast, windowless x-ray diodes were used in conjunction with critical angle reflecting mirrors and thin filters for energy definition for two channels, 300 to 600 eV and 800 to 1300 eV. A third channel, using only an x-ray diode and filter, provided spectral information in the 100 to 300 eV region. Results from exploding pusher targets will be presented and compared with those of other diagnostic techniques and Lasnex calculations. Future expansion and modifications of the present system will be discussed

  17. Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode

    International Nuclear Information System (INIS)

    Deng, R.; Yao, B.; Li, Y.F.; Xu, Y.; Li, J.C.; Li, B.H.; Zhang, Z.Z.; Zhang, L.G.; Zhao, H.F.; Shen, D.Z.

    2013-01-01

    The n-ZnO/p-NiO heterojunction was prepared by depositing a p-type NiO film on a c-plane sapphire by rf magnetron sputtering and then growing a n-type ZnO film on the NiO film by plasma-assisted molecular beam epitaxy. The heterojunction shows a diode-like rectification characteristic with a turn-on voltage of ∼3.6 V and emits UV light upon putting a forward bias. The intensity of the UV emission increases as injection current increases from 0.5 to 3.5 mA, but the wavelength of the UV emission decreases from 404 to 387 nm. It is demonstrated that the UV emission comes from near band-edge radiative recombination of electron and hole in the ZnO layer. The mechanism of the UV electroluminescence is discussed in the present work. - Highlights: ► The n-ZnO/p-NiO heterojunction was prepared by rf magnetron sputtering. ► The heterojunction shows a diode-like rectification characteristic with a turn-on voltage of ∼3.6 V. ► The heterojunction realizes UV EL emission with wavelength of 387 nm at the injection current of 3.5 mA.

  18. High efficiency and broadband acoustic diodes

    Science.gov (United States)

    Fu, Congyi; Wang, Bohan; Zhao, Tianfei; Chen, C. Q.

    2018-01-01

    Energy transmission efficiency and working bandwidth are the two major factors limiting the application of current acoustic diodes (ADs). This letter presents a design of high efficiency and broadband acoustic diodes composed of a nonlinear frequency converter and a linear wave filter. The converter consists of two masses connected by a bilinear spring with asymmetric tension and compression stiffness. The wave filter is a linear mass-spring lattice (sonic crystal). Both numerical simulation and experiment show that the energy transmission efficiency of the acoustic diode can be improved by as much as two orders of magnitude, reaching about 61%. Moreover, the primary working band width of the AD is about two times of the cut-off frequency of the sonic crystal filter. The cut-off frequency dependent working band of the AD implies that the developed AD can be scaled up or down from macro-scale to micro- and nano-scale.

  19. Improvement of ITO properties in green-light-emitting devices by using N2:O2 plasma treatment

    Science.gov (United States)

    Jeon, Hyeonseong; Kang, Seongjong; Oh, Hwansool

    2016-01-01

    Plasma treatment reduces the roughness of the indium-tin-oxide (ITO) interface in organic light emitting diodes (OLEDs). Oxygen gas is typically used in the plasma treatment of conventional OLED devices. However, in this study, nitrogen and oxygen gases were used for surface treatment to improve the properties of ITO. To investigate the improvements resulting from the use of nitrogen and oxygen plasma treatment, fabricated green OLED devices. The device's structure was ITO (600 Å) / α-NPD (500 Å) / Alq3:NKX1595 (400 Å:20 Å,5%) / LiF / Al:Li (10 Å:1000 Å). The plasma treatment was performed in a capacitive coupled plasma (CCP) type plasma treatment chamber similar to that used in the traditional oxygen plasma treatment. The results of this study show that the combined nitrogen/oxygen plasma treatment increases the lifetime, current density, and brightness of the fabricated OLED while decreasing the operating voltage relative to those of OLEDs fabricated using oxygen plasma treatment.

  20. Plasma diagnostics: Detection of laser scattering: Final report, September 1, 1978 to August 31, 1982

    International Nuclear Information System (INIS)

    Dutta, J.M.; Jones, C.R.

    1985-01-01

    Submillimeter (SMM) radiation is the optimum radiation to use in studying some parameters of plasmas produced in Tokamak machines. The ultimate objective has been in constructing a low-noise SMM receiver suitable for application to the diagnosis of Tokamak plasmas. In this connection, a compact, stable SMM laser has been designed and constructed, and its performance as a local oscillator in the heterodyne detection has been tested. The performance of Schottky diodes as mixer elements has been evaluated by utilizing them in a quasi-optical modulation for the heterodyne generation of tunable sidebands

  1. Radiation yield from SHIVA Star plasma flow switch driven fast liner implosions

    International Nuclear Information System (INIS)

    Degnan, J.H.; Baker, W.L.; Beason, J.D.

    1987-01-01

    A 2.5 Terawatt 0.5 MJ isotropic equivalent radiation yield was obtained in a SHIVA Star plasma flow switch driven fast liner implosion. The 1313 μF 80 kV discharge delivered 13 MA to a coaxial vacuum inductive store with a plasma armature. Over 9.4 MA current was plasma flow switched to the implosion load (>90% of the gun muzzle current at that time). The load wa a 5 cm radius, 2 cm tall, 200 μg/cm/sup 2/ aluminum plated Formvar cylindrical foil. The radiation pulse was measured with an array of seven X-ray diodes (XRDs). The XRDs all had aluminum photocathodes, a variety of filters and nickel mesh to reduce the incident X-ray photon flux to avoid Child-Langmuir saturation. The filters were chosen so that the authors had seven different diode response functions covering the energy range from 15 eV to about 3 keV. The filters were mounted remote (about 30 cm) from the XRDs. The anode mesh served as part of the mesh array. The distance between meshes was greater than 10 cm. Each XRD had a 5 cm diameter cathode with an aperture limited to a 2 cm diameter. The XRD anode-cathode gap was 1 cm and the bias was 5 kV. The theoretical Child-Langmuir saturation signal was 125 V with 50 Ω termination. The maximum observed signal was 75 V

  2. Effects of the bleaching procedures on enamel micro-hardness: Plasma Arc and diode laser comparison.

    Science.gov (United States)

    Nematianaraki, Saeid; Fekrazad, Reza; Naghibi, Nasim; Kalhori, Katayoun Am; Junior, Aldo Brugnera

    2015-10-02

    One of the major side effects of vital bleaching is the reduction of enamel micro-hardness. The purpose of this study was to evaluate the influence of two different bleaching systems, Plasma Arc and GaAlAs laser, on the enamel micro-hardness. 15 freshly extracted human third molars were sectioned to prepare 30 enamel blocks (5×5 mm). These samples were then randomly divided into 2 groups of 15 each (n=15): a plasma arc bleaching group (: 350-700 nm) + 35% Hydrogen Peroxide whitening gel and a laser bleaching group (GaAlAs laser, λ: 810 nm, P: 10 W, CW, Special Tip) + 35% Hydrogen Peroxide whitening gel. Samples were subjected to the Vickers micro-hardness test (VHN) at a load of 50 g for 15s before and after treatment. Data were statistically analyzed by a Mann-Whitney test (p≤0.05). In the GaAlAs laser group, the enamel micro-hardness was 618.2 before and was reduced to 544.6 after bleaching procedures. In the plasma arc group, the enamel micro-hardness was 644.8 before and 498.9 after bleaching. Although both techniques significantly reduced VHN, plasma arc bleaching resulted in a 22.62% reduction in VHN for enamel micro-hardness, whereas an 11.89% reduction in VHN was observed for laser bleaching; this difference is statistically significant (plaser than with the plasma arc. Therefore GaAlAs laser bleaching has fewer harmful effects than plasma arc in respect to enamel micro-hardness reduction.

  3. Design concepts for PBFA-II's applied-B ion diode

    International Nuclear Information System (INIS)

    Rovang, D.C.

    1985-01-01

    The lithium ion diode to be used at the center of Particle Beam Fusion Accelerator-II (PBFA-II) at Sandia National Laboratories is an applied-B ion diode. The center section of the PBFA-II accelerator is where the electrical requirements of the accelerator, the design requirements of the diode, and the operational requirements must all be satisfied simultaneously for a successful experiment. From an operational standpoint, the ion diode is the experimental hub of the accelerator and needs to be easily and quickly installed and removed. Because of the physical size and geometry of the PBFA-II center section, achieving the operational requirements has presented an interesting design challenge. A discussion of the various design requirements and the proposed concepts for satisfying them is presented

  4. Zener diode controls switching of large direct currents

    Science.gov (United States)

    1965-01-01

    High-current zener diode is connected in series with the positive input terminal of a dc supply to block the flow of direct current until a high-frequency control signal is applied across the zener diode. This circuit controls the switching of large dc signals.

  5. Suppression of vertical instability in elongated current-carrying plasmas by applying stellarator rotational transform

    International Nuclear Information System (INIS)

    ArchMiller, M. C.; Cianciosa, M. R.; Ennis, D. A.; Hanson, J. D.; Hartwell, G. J.; Hebert, J. D.; Herfindal, J. L.; Knowlton, S. F.; Ma, X.; Maurer, D. A.; Pandya, M. D.; Traverso, P.

    2014-01-01

    The passive stability of vertically elongated current-carrying toroidal plasmas has been investigated in the Compact Toroidal Hybrid, a stellarator/tokamak hybrid device. In this experiment, the fractional transform f, defined as the ratio of the imposed external rotational transform from stellarator coils to the total rotational transform, was varied from 0.04 to 0.50, and the elongation κ was varied from 1.4 to 2.2. Plasmas that were vertically unstable were evidenced by motion of the plasma in the vertical direction. Vertical drifts are measured with a set of poloidal field pickup coils. A three chord horizontally viewing interferometer and a soft X-ray diode array confirmed the drifts. Plasmas with low fractional transform and high elongation are the most susceptible to vertical instability, consistent with analytic predictions that the vertical mode in elongated plasmas can be stabilized by the poloidal field of a relatively weak stellarator equilibrium

  6. Dose rate and SDD dependence of commercially available diode detectors

    International Nuclear Information System (INIS)

    Saini, Amarjit S.; Zhu, Timothy C.

    2004-01-01

    The dose-rate dependence of commercially available diode detectors was measured under both high instantaneous dose-rate (pulsed) and low dose rate (continuous, Co-60) radiation. The dose-rate dependence was measured in an acrylic miniphantom at a 5-cm depth in a 10x10 cm 2 collimator setting, by varying source-to-detector distance (SDD) between at least 80 and 200 cm. The ratio of a normalized diode reading to a normalized ion chamber reading (both at SDD=100 cm) was used to determine diode sensitivity ratio for pulsed and continuous radiation at different SDD. The inverse of the diode sensitivity ratio is defined as the SDD correction factor (SDD CF). The diode sensitivity ratio increased with increasing instantaneous dose rate (or decreasing SDD). The ratio of diode sensitivity, normalized to 4000 cGy/s, varied between 0.988 (1490 cGy/s)-1.023 (38 900 cGy/s) for unirradiated n-type Isorad Gold, 0.981 (1460 cGy/s)-1.026 (39 060 cGy/s) for unirradiated QED Red (n type), 0.972 (1490 cGy/s)-1.068 (38 900 cGy/s) for preirradiated Isorad Red (n type), 0.985 (1490 cGy/s)-1.012 (38 990 cGy/s) for n-type Pt-doped Isorad-3 Gold, 0.995 (1450 cGy/s)-1.020 (21 870 cGy/s) for n-type Veridose Green, 0.978 (1450 cGy/s)-1.066 (21 870 cGy/s) for preirradiated Isorad-p Red, 0.994 (1540 cGy/s)-1.028 (17 870 cGy/s) for p-type preirradiated QED, 0.998 (1450 cGy/s)-1.003 (21 870 cGy/s) for the p-type preirradiated Scanditronix EDP20 3G , and 0.998 (1490 cGy/s)-1.015 (38 880 cGy/s) for Scanditronix EDP10 3G diodes. The p-type diodes do not always show less dose-rate dependence than the n-type diodes. Preirradiation does not always reduce diode dose-rate dependence. A comparison between the SDD dependence measured at the surface of a full scatter phantom and that in a miniphantom was made. Using a direct adjustment of radiation pulse height, we concluded that the SDD dependence of diode sensitivity can be explained by the instantaneous dose-rate dependence if sufficient buildup is

  7. Light Converting Inorganic Phosphors for White Light-Emitting Diodes

    OpenAIRE

    Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

    2010-01-01

    White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incand...

  8. InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

    Science.gov (United States)

    Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.

    1992-01-01

    This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

  9. Spin-Wave Diode

    Directory of Open Access Journals (Sweden)

    Jin Lan (兰金

    2015-12-01

    Full Text Available A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound states in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. Our findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.

  10. Seven-laser diode end-pumped Nd

    International Nuclear Information System (INIS)

    Berger, J.; Welch, D.F.; Streifer, W.; Scifres, D.R.; Smith, J.J.; Hoffman, H.J.; Peisley, D.; Radecki, D.

    1988-01-01

    End pumping of solid-state lasers by single semiconductor laser diode arrays (LDAs) is efficient, but the maximum pump power is limited by the source brightness and matching the TEM/sub 00/ Nd:YAG cavity mode. To increase the output power from a solid-state Nd:YAG laser, one option is to employ a multiplicity of LDA to provide more pump power than is available from a single source. The authors report herein a 660-mW cw TEM/sub 00/ Nd:YAG laser, end-pumped by seven LDA, with bundled optical fibers coupling the light from each diode to the Nd:YAG rod end. The maximum electrical-to-optical conversion efficiency attained was 4.7% at 560-mW Nd:YAG output power. The LDAs (SDL-2430-C, 100 μm wide) were mounted on separate thermoelectric coolers to tune emission wavelength to the Nd:YAG absorption bands. The diodes were operated at their rated output power (50,000 h mean time to failure). The 110/125-μm diam 0.37-N.A. fibers were butt coupled to the lasers and glued together into a hexagonal close pack. The authors have obtained the highest average power demonstrated to date in the TEM/sub 00/ mode from a Nd:YAG laser, reliably end-pumped by multiple laser diodes with good efficiency

  11. Vortex Diode Analysis and Testing for Fluoride Salt-Cooled High-Temperature Reactors

    International Nuclear Information System (INIS)

    Yoder, Graydon L. Jr.; Elkassabgi, Yousri M.; De Leon, Gerardo I.; Fetterly, Caitlin N.; Ramos, Jorge A.; Cunningham, Richard Burns

    2012-01-01

    Fluidic diodes are presently being considered for use in several fluoride salt-cooled high-temperature reactor designs. A fluidic diode is a passive device that acts as a leaky check valve. These devices are installed in emergency heat removal systems that are designed to passively remove reactor decay heat using natural circulation. The direct reactor auxiliary cooling system (DRACS) uses DRACS salt-to-salt heat exchangers (DHXs) that operate in a path parallel to the core flow. Because of this geometry, under normal operating conditions some flow bypasses the core and flows through the DHX. A flow diode, operating in reverse direction, is-used to minimize this flow when the primary coolant pumps are in operation, while allowing forward flow through the DHX under natural circulation conditions. The DRACSs reject the core decay heat to the environment under loss-of-flow accident conditions and as such are a reactor safety feature. Fluidic diodes have not previously been used in an operating reactor system, and therefore their characteristics must be quantified to ensure successful operation. This report parametrically examines multiple design parameters of a vortex-type fluidic diode to determine the size of diode needed to reject a particular amount of decay heat. Additional calculations were performed to size a scaled diode that could be tested in the Oak Ridge National Laboratory Liquid Salt Flow Loop. These parametric studies have shown that a 152.4 mm diode could be used as a test article in that facility. A design for this diode is developed, and changes to the loop that will be necessary to test the diode are discussed. Initial testing of a scaled flow diode has been carried out in a water loop. The 150 mm diode design discussed above was modified to improve performance, and the final design tested was a 171.45 mm diameter vortex diode. The results of this testing indicate that diodicities of about 20 can be obtained for diodes of this size. Experimental

  12. Electron dosimetry in irradiation processing with rad-hard diodes

    International Nuclear Information System (INIS)

    Santos, Thais Cavalheri dos

    2012-01-01

    This work had the aim of the development of dosimetric systems based on Si special diodes, resistant to radiation damage to online monitoring of irradiation processing using 1.5 MeV electrons energy and for relative dosimetry and clinical electron beam scanning within an energy range of 6 MeV up to 21 MeV. The diodes used were produced by Float Zone standard (FZ), Magnetic Czochralski (MCz) and epitaxy growth (EPI) methods. In order to use the diodes as detectors, they were fixed on alumina base to allow the connection of the polarization electrodes and the signals extraction. After the diode assembly on the base, each one was housed in a black acrylic probe with aluminized Mylar® window and LEMO® connector. With the devices operating in photovoltaic mode, the integration of the current signals as a function of irradiation time allowed obtain the charge produced in the sensitive volume of each diode irradiated. The electron accelerator used for high doses irradiation was the DC 1500/25/4 JOB 188 of the 1.5 MeV installed at the Radiation Technology Center of the IPEN/CNEN-SP. The current profile as function of exposure time, the response repeatability, the sensitivity as function of absorbed dose and the dose response curve were studied for each device. In comparison to FZ diode, we observed a greater decrease in the sensitivity for MCz diode, and good repeatability in both cases. Also, the increasing of the charge with the absorbed dose was well fitted by a second order polynomial function. In the EPI diode characterization, this one exhibited repeatability better than CTA dosimeters applied routinely in radiation processing. The above results indicate the potential use of these radiation hardness Si diodes in online dosimetry to high doses applications. For low doses irradiation were used the linear accelerators KD2 and Primus, both manufactured by Siemens and located at Sirio-Libanes Hospital. The diodes responses were evaluated for electron beams within the

  13. Method and system for homogenizing diode laser pump arrays

    Science.gov (United States)

    Bayramian, Andy J

    2013-10-01

    An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

  14. Room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diodes and high-frequency diode rectifiers

    International Nuclear Information System (INIS)

    Chen, Wei-Chung; Hsu, Po-Ching; Chien, Chih-Wei; Chang, Kuei-Ming; Hsu, Chao-Jui; Chang, Ching-Hsiang; Lee, Wei-Kai; Chou, Wen-Fang; Wu, Chung-Chih; Hsieh, Hsing-Hung

    2014-01-01

    In this work, we report successful implementation of room-temperature-processed flexible n-InGaZnO/p-Cu 2 O heterojunction diodes on polyethylene naphthalate (PEN) plastic substrates using the sputtering technique. Using n-type InGaZnO and p-type Cu 2 O films deposited by sputtering at room temperature, flexible n-InGaZnO/p-Cu 2 O heterojunction diodes were successfully fabricated on PEN plastic substrates. The didoes on PEN substrates exhibited a low apparent turn-on voltage of 0.44 V, a high rectification ratio of up to 3.4 × 10 4 at ±1.2 V, a high forward current of 1 A cm −2 around 1 V and a decent ideality factor of 1.4, similar to the characteristics of n-InGaZnO/p-Cu 2 O diodes fabricated on glass substrates. The characterization of the frequency response of the room-temperature-processed flexible n-InGaZnO/p-Cu 2 O heterojunction diode rectifiers indicated that they are capable of high-frequency operation up to 27 MHz, sufficient for high-frequency (13.56 MHz) applications. Preliminary bending tests on diode characteristics and rectifier frequency responses indicate their promise for applications in flexible electronics. (paper)

  15. A novel diode laser system for photodynamic therapy

    DEFF Research Database (Denmark)

    Samsøe, E.; Andersen, P. E.; Petersen, P.

    2001-01-01

    In this paper a novel diode laser system for photodynamic therapy is demonstrated. The system is based on linear spatial filtering and optical phase conjugate feedback from a photorefractive BaTiO3 crystal. The spatial coherence properties of the diode laser are significantly improved. The system...

  16. Chip-scale white flip-chip light-emitting diode containing indium phosphide/zinc selenide quantum dots

    Science.gov (United States)

    Fan, Bingfeng; Yan, Linchao; Lao, Yuqin; Ma, Yanfei; Chen, Zimin; Ma, Xuejin; Zhuo, Yi; Pei, Yanli; Wang, Gang

    2017-08-01

    A method for preparing a quantum dot (QD)-white light-emitting diode (WLED) is reported. Holes were etched in the SiO2 layer deposited on the sapphire substrate of the flip-chip LED by inductively coupled plasma, and these holes were then filled with QDs. An ultraviolet-curable resin was then spin-coated on top of the QD-containing SiO2 layer, and the resin was cured to act as a protecting layer. The reflective sidewall structure minimized sidelight leakage. The fabrication of the QD-WLED is simple in preparation and compatible with traditional LED processes, which was the minimum size of the WLED chip-scale integrated package. InP/ZnS core-shell QDs were used as the converter in the WLED. A blue light-emitting diode with a flip-chip structure was used as the excitation source. The QD-WLED exhibited color temperatures from 5900 to 6400 K and Commission Internationale De L'Elcairage color coordinates from (0.315, 0.325) to (0.325, 0.317), under drive currents from 100 to 400 mA. The QD-WLED exhibited stable optoelectronic properties.

  17. Effect of laser-diode light on growth of Lactuca sativa L

    International Nuclear Information System (INIS)

    Yamazaki, A.; Tsuchiya, H.; Miyajima, H.; Honma, T.; Kan, H.

    2000-01-01

    Development of an effective, high-power, low-cost, artificial light source for use in plant-growing facilities would be very beneficial for plant production. Recently, the laser-diode lamp was proposed as a new type of light source for plant production. The advantages of the laser-diode lamp over conventional light sources are its high electrical-to-optical power conversion efficiency, low thermal radiation, easy set-up for high power and pulse irradiation, small weight and small volume for mounting, and selectivity for proper wavelength. Because laser light itself differs from the light sources presently used in plant growing, we confirmed the possibility of growing plants under the laser-diode light using lettuces. Lettuce seedlings with 5-6 leaves were grown under a laser-diode lamp panel with 30 pieces of high-power and high-efficiency AlGaInP laser-diodes. The power of each laser-diode lamp was 500 mW, and the wavelength was 680 nm, which was efficient for photosynthesis. The lettuce plants were able to grow under the laser-diode light. However, plants were lighter and had thinner leaves than those grown under high-pressure sodium lamps. (author)

  18. Mis-diode as a low-energy X- and γ-ray spectrometer

    International Nuclear Information System (INIS)

    Konova, A.

    1980-01-01

    Considered are main peculiarities of apparata called MIS-diods having metal-thin isolating semiconductor structure and used as detectors of low-energy gamma and X-ray radiation. Discussed are advantages of tunnel MIS-diods based on non-primitive carriers. Presented are results of experimental measurements carried out using system of metal-silion oxide-silicon with the oxide layer width of 10-25 A (silicon with acceptor concentration of 10 19 m -3 ). Data presented show that MIS-diods can be considered as diods with p-n - transition in which n + - region is an inversion layer near the semiconductor surface, and further a leant region is situated. When voltage is applied only the depth of the leant region changes. In case of high quality diods the leakage currents are very small. Results of the investigation performed show that MIS-diods with oxide film wiolth of 10-22 A (the film covering p-silicon with high specific resistance) can be used as spectrometers of low-energy photons having particularly high energetic solution at room temperature. An advantage of new diods is the reverse current significantly lower in comparison with that of usual detectors with the Schottky barrier

  19. Ion channelling analysis of pre-amorphised silicon diodes using a nuclear microprobe

    International Nuclear Information System (INIS)

    Thornton, J.; Paus, K.C.

    1988-01-01

    Aligned and random ion channelling analysis was performed on p + n diode structures in silicon, with the Surrey nuclear microprobe. Three different types of diode were investigated, each pre-amorphised by a different ion (Si + , Ge + or Sn + ) before the p + region was formed by BF 2 + implantation. The ion channelling measurements are presented and compared with previously published electrical measurements on these diodes. Relatively large residual disorder and junction leakage currents were found for the Si + pre-amorphised diodes; however, all the diodes were leaky. The results are consistent with dislocation loops within the depletion regions of the diodes causing both the residual disorder and the large leakage currents. Cross-sectional transmission electron microscopy studies support this model. (author)

  20. High efficiency GaN-based LEDs using plasma selective treatment of p-GaN surface

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Young-Bae; Naoi, Yoshiki; Sakai, Shiro [Department of Electrical and Electronic Engineering, University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506 (Japan); Takaki, Ryohei; Sato, Hisao [Nitride Semiconductor Co., Ltd., 115-7 Itayajima, Akinokami, Seto-cho, Naruto, Tokushima 771-0360 (Japan)

    2003-11-01

    We have studied a new method of increasing the extraction efficiency of a GaN-based light-emitting diode (LED) using a plasma surface treatment. In this method, prior to the evaporation of a semitransparent p-metal, the surface of a p-GaN located beneath a p-pad is selectively exposed to a nitrogen plasma in a reactive ion etching (RIE) chamber. The electrical characteristics of the plasma treated p-GaN remarkably changes its resistivity into semi-insulator without any parasitic damage. Since the LEDs with a new method have no light absorption in a p-pad region, a higher optical power can be extracted compared to a conventional LEDs without plasma selective treatment on the p-GaN surface. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Fabrication study of GaAs mesa diodes for X-ray detection

    OpenAIRE

    Ng, J.S.; Meng, X.; Lees, J.E.; Barnett, A.; Tan, C.H.

    2014-01-01

    A study of leakage currents using GaAs mesa p-i-n diodes for X-ray photon counting is presented. Different wet chemical etching solution and etch depth were used in the fabrication of these mesa diodes. Low and uniform leakage currents were achieved when the diode fabrication used (i) a combination of main etching solution and finishing etching solution for the etching, and (ii) partially etched mesas. The diodes fabricated using these methods showed well-defined X-ray peaks when illuminated ...

  2. Tapered diode laser pumped 946 nm Nd:YAG laser

    DEFF Research Database (Denmark)

    Cheng, Haynes Pak Hay; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2009-01-01

    We successfully implemented a 946 nm Nd:YAG laser based on a 808 nm tapered diode pump laser. The tapered diode is developed at the Ferdinand-Braun-Institute fur Hochstfrequenztechnik in Germany. Figure 2 shows the experimental setup and results of each pump source coupled into a 1.5 mm crystal...... laser, we show that tapered diode laser pumping potentially increase the power of 946 nm lasers by a factor of two and reduce the threshold by a factor of three....

  3. Compact 2100 nm laser diode module for next-generation DIRCM

    Science.gov (United States)

    Dvinelis, Edgaras; Greibus, Mindaugas; TrinkÅ«nas, Augustinas; NaujokaitÄ--, Greta; Vizbaras, Augustinas; Vizbaras, Dominykas; Vizbaras, Kristijonas

    2017-10-01

    Compact high-power 2100 nm laser diode module for next-generation directional infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state and fiber laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 - 2450 nm band [1] while also maintaining very attractive size, weight, power consumption and cost characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Total 2 emitters stacked vertically were used in 2100 nm laser diode module. Final optical output power of the module goes up to 2 W at temperature of 20 °C. Total dimensions of the laser diode module are 35 x 25 x 16 mm (L x W x H) with a weight of 28 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.

  4. Constant-current regulator improves tunnel diode threshold-detector performance

    Science.gov (United States)

    Cancro, C. A.

    1965-01-01

    Grounded-base transistor is placed in a tunnel diode threshold detector circuit, and a bias voltage is applied to the tunnel diode. This provides the threshold detector with maximum voltage output and overload protection.

  5. Electrical parameters of metal doped n-CdO/p-Si heterojunction diodes

    Energy Technology Data Exchange (ETDEWEB)

    Umadevi, P. [Department of Physics, Sri Vidya College of Engineering & Technology, Virudhunagar 626005, Tamilnadu (India); Prithivikumaran, N., E-mail: janavi_p@yahoo.com [Nanoscience Research Lab, Department of Physics, VHNSN College, Virudhunagar 626001, Tamilnadu (India)

    2016-11-15

    The CdO, Al doped CdO and Cu doped CdO thin films were coated on p-type silicon substrates by sol–gel spin coating method. The structural, surface morphological and electrical properties of undoped, Al and Cu doped CdO films on silicon substrate were studied. The Ag/CdO/p-Si, Ag/Al: CdO/p-Si and Ag/Cu: CdO/p-Si heterojunction diodes were fabricated and the diode parameters such as reverse saturation current, barrier height and ideality factor of the diodes were investigated by current–voltage (I–V)characteristics. The reverse current of the diode was found to increase strongly with the doping. The values of barrier height and ideality factor were decreased by doping with aluminium and copper. Photo response of the heterojunction diodes was studied and it was found that, the heterojunction diode constructed with the doped CdO has larger Photo response than the undoped heterojunction diode.

  6. Photon response of silicon diode neutron detectors

    International Nuclear Information System (INIS)

    McCall, R.C.; Jenkins, T.M.; Oliver, G.D. Jr.

    1976-07-01

    The photon response of silicon diode neutron detectors was studied to solve the problem on detecting neutrons in the presence of high energy photons at accelerator neutron sources. For the experiment Si diodes, Si discs, and moderated activation foil detectors were used. The moderated activation foil detector consisted of a commercial moderator and indium foils 2'' in diameter and approximately 2.7 grams each. The moderator is a cylinder of low-density polyethylene 6 1 / 4 '' in diameter by 6 1 / 16 '' long covered with 0.020'' of cadmium. Neutrons are detected by the reaction 115 In (n,γ) 116 In(T/sub 1 / 2 / = 54 min). Photons cannot be detected directly but photoneutrons produced in the moderator assembly can cause a photon response. The Si discs were thin slices of single-crystal Si about 1.4 mils thick and 1'' in diameter which were used as activation detectors, subsequently being counted on a thin-window pancake G.M. counter. The Si diode fast neutron dosimeter 5422, manufactured by AB Atomenergi in Studsvik, Sweden, consists of a superdoped silicon wafer with a base width of 0.050 inches between two silver contacts coated with 2 mm of epoxy. For this experiment, the technique of measuring the percent change of voltage versus dose was used. Good precision was obtained using both unirradiated and preirradiated diodes. All diodes, calibrated against 252 CF in air,were read out 48 hours after irradiation to account for any room temperature annealing. Results are presented and discussed

  7. Compact green-diode-based lasers for biophotonic bioimaging

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Petersen, Paul Michael

    2014-01-01

    Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers.......Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers....

  8. Design and fabrication of metal-insulator-metal diode for high frequency applications

    Science.gov (United States)

    Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

    2017-02-01

    Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

  9. Electromagnetic particle-in-cell simulations of Applied-B proton diodes

    International Nuclear Information System (INIS)

    Slutz, S.A.; Seidel, D.B.; Coats, R.S.

    1986-01-01

    Fully electromagnetic particle-in-cell simulations of Applied-B ion diodes have been performed using the magic code. These calculations indicate that Applied-B diodes can be nearly 100% efficient. Furthermore, the simulations exhibit an impedance relaxation phenomenon due to the buildup of electron space charge near the anode which causes a time-dependent enhancement of the ion emission above the Child--Langmuir value. This phenomenon may at least partially explain the rapidly decreasing impedance that has been observed in Applied-B ion diode experiments. The results of our numerical simulations will be compared to experimental data on Applied-B ion diodes and to analytic theories of their operation

  10. Wideband 4-diode sampling circuit

    Science.gov (United States)

    Wojtulewicz, Andrzej; Radtke, Maciej

    2016-09-01

    The objective of this work was to develop a wide-band sampling circuit. The device should have the ability to collect samples of a very fast signal applied to its input, strengthen it and prepare for further processing. The study emphasizes the method of sampling pulse shaping. The use of ultrafast pulse generator allows sampling signals with a wide frequency spectrum, reaching several gigahertzes. The device uses a pulse transformer to prepare symmetrical pulses. Their final shape is formed with the help of the step recovery diode, two coplanar strips and Schottky diode. Made device can be used in the sampling oscilloscope, as well as other measurement system.

  11. Measurement of soft X-ray power from high-power Z-pinch plasma

    International Nuclear Information System (INIS)

    Wang Wensheng; Qiu Aici; Sun Fengrong; Luo Jianhui; Zhou Haisheng; He Duohui

    2003-01-01

    A Ni-film bolometer driven by the pulsed constant-voltage supply was developed for measuring soft X-ray energy under 1 keV generated from the Qiang-Guang-I, while the measuring system of the soft X-ray power was established with an X-ray diode detector. Results of the soft X-ray energy and power measurements were obtained at the experiment of Kr gas-puff high-power Z-pinch plasma

  12. Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

    Directory of Open Access Journals (Sweden)

    Bisewski Damian

    2016-09-01

    Full Text Available This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.

  13. Dark Current And Voltage Measurements Of Metal-Organic-Semiconductor (M-Or-S) Diode

    International Nuclear Information System (INIS)

    Adianto

    1996-01-01

    . Some Metal-Organic-Semiconductor (M-Or-S) thin film diodes, constructed with an organic polymer (polymerized toluene) as an active component has been successfully fabricated. The thin film M-Or-S diodes were fabricated on an n-type silicon with resistivity of 250-500 Ocm and p type silicon with resistivity of 10-20 Ocm as a substrate with polymerized toluene used as insulator. When deposited on silicon wafers with electrode of evaporated Ni on the n-type silicon and evaporated Au as the electrode on the polymerized toluene film, the electronic devices of Metal-Organic- Semiconductor (M-Or-S) type can be produced with one of its characteristics is that their light sensitivity. A plasma ion deposition system was constructed and used to deposit organic monomeric substance (toluene) that functioned as an isolator between semiconductor and the evaporated metal electrodes. The current-voltage measurements for different configurations of M-Or-S devices were carried out to determine the current-voltage (1-V) characteristics for M-Or-S devices with different materials and thicknesses. In addition to the 1-V measurement mentioned before, 1-V measurements of the devices were also carried out by using a curve tracer oscilloscope, and the picture of the effective parameters of each of the device could be taken by using a polaroid camera. Since the devices are very sensitive to light, the devices were all tested in a black-box which was covered by a black cloth to make sure that there was no light coming through. The experimental results for p- and n-type silicon substrates showed that an M-Or-S diode with n-type gave a higher breakdown voltage than that p- type silicon. In addition, the reverse bias breakdown voltage increased as the thickness of the thin film increased in the range of 50 -2500 V/μm

  14. Direct diode lasers and their advantages for materials processing and other applications

    Science.gov (United States)

    Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

    2015-03-01

    The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of direct current control allows pulses of several microseconds with hundreds of watts average power. Spot sizes of less than 100 μm are obtained at the work piece. Such a diode system allows materials processing with a pulse parameter range that is hardly addressed by any other laser system. High productivity material ablation with cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but

  15. Investigation of MIM Diodes for RF Applications

    KAUST Repository

    Khan, Adnan

    2015-05-01

    Metal Insulator Metal (MIM) diodes that work on fast mechanism of tunneling have been used in a number of very high frequency applications such as (Infra-Red) IR detectors and optical Rectennas for energy harvesting. Their ability to operate under zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF use is the requirement of a very thin oxide layer essential for the tunneling operation that requires sophisticated nano-fabrication processes. Another issue is that the reliability and stable performance of MIM diodes is highly dependent on the surface roughness of the metallic electrodes. Finally, comprehensive RF characterization has not been performed for MIM diodes reported in the literature, particularly from the perspective of their integration with antennas as well as their rectification abilities. In this thesis, various metal deposition methods such as sputtering, electron beam evaporation, and Atomic Layer Deposition (ALD) are compared in pursuit of achieving low surface roughness. It is worth mentioning here that MIM diodes realized through ALD method have been presented for the first time in this thesis. Amorphous metal alloy have also been investigated in terms of their low surface roughness. Zinc-oxide has been investigated for its suitability as a thin dielectric layer for MIM diodes. Finally, comprehensive RF characterization of MIM diodes has been performed in two ways: 1) by standard S-parameter methods, and 2) by investigating their rectification ability under zero bias operation. It is concluded from the Atomic Force Microscopy (AFM) imaging that surface roughness as low as sub 1 nm can be achieved reliably from crystalline metals such as copper and platinum. This value is comparable to surface roughness achieved from amorphous alloys, which are non

  16. Numerical simulation on the energy spectrum of the electron beam generated by low-impedance diode and the influence of external magnetic field on diode impedance

    International Nuclear Information System (INIS)

    Liu Guozhi

    2003-01-01

    The energy spectrum of the electron beam generated by low-impedance diode and the influence of external magnetic field on the impedance of diode are studied numerically in this paper. The results show that the beam generated by the diode has an energy spread, even with constant applied voltage. Additionally, external magnetic field has great but reverse influence on the impedance of low-impedance diode, which is, according to the author's analysis, the result of the change of the electron's track due to external magnetic field. If the beam current is less than the critical one for self-pinch, the impedance will be constant with the variation of external magnetic field

  17. Clinical experience with routine diode dosimetry for electron beam radiotherapy

    International Nuclear Information System (INIS)

    Yaparpalvi, Ravindra; Fontenla, Doracy P.; Vikram, Bhadrasain

    2000-01-01

    Purpose: Electron beam radiotherapy is frequently administered based on clinical setups without formal treatment planning. We felt, therefore, that it was important to monitor electron beam treatments by in vivo dosimetry to prevent errors in treatment delivery. In this study, we present our clinical experience with patient dose verification using electron diodes and quantitatively assess the dose perturbations caused by the diodes during electron beam radiotherapy. Methods and Materials: A commercial diode dosimeter was used for the in vivo dose measurements. During patient dosimetry, the patients were set up as usual by the therapists. Before treatment, a diode was placed on the patient's skin surface and secured with hypoallergenic tape. The patient was then treated and the diode response registered and stored in the patient radiotherapy system database via our in-house software. A customized patient in vivo dosimetry report showing patient details, expected and measured dose, and percent difference was then generated and printed for analysis and record keeping. We studied the perturbation of electron beams by diodes using film dosimetry. Beam profiles at the 90% prescription isodose depths were obtained with and without the diode on the beam central axis, for 6-20 MeV electron beams and applicator/insert sizes ranging from a 3-cm diameter circular field to a 25 x 25 cm open field. Results: In vivo dose measurements on 360 patients resulted in the following ranges of deviations from the expected dose at the various anatomic sites: Breast (222 patients) -20.3 to +23.5% (median deviation 0%); Head and Neck (63 patients) -21.5 to +14.8% (median -0.7%); Other sites (75 patients) -17.6 to +18.8% (median +0.5%). Routine diode dosimetry during the first treatment on 360 patients (460 treatment sites) resulted in 11.5% of the measurements outside our acceptable ±6% dose deviation window. Only 3.7% of the total measurements were outside ±10% dose deviation. Detailed

  18. Testing of high current by-pass diodes for the LHC magnet quench protection

    International Nuclear Information System (INIS)

    Berland, V.; Hagedorn, D.; Rodriguez-Mateos, F.

    1996-01-01

    Within the framework of the Large Hadron Collider (LHC) R and D program, CERN is performing experiments to establish the current carrying capability of irradiated diodes at liquid Helium temperatures for the superconducting magnet protection. Even if the diodes are degraded by radiation dose and neutron fluence, they must be able to support the by-pass current during a magnet quench and the de-excitation of the superconducting magnet ring. During this discharge, the current in the diode reaches a maximum value up to 13 kA and decreased with an exponential time constant of 100 s. Two sets of 75 mm wafer diameter epitaxial diodes, one irradiated and one non-irradiated, were submitted to this experiment. The irradiated diodes have been exposed to radiation in the accelerator environment up to 20 kGy and then annealed at room temperature. After the radiation exposure the diodes had shown a degradation of forward voltage of 50% which reduced to about 14% after the thermal annealing. During the long duration high current tests, one of the diodes was destroyed and the other two irradiated diodes showed a different behavior compared with non-irradiated diodes

  19. Transurethral vaporesection of prostate: diode laser or thulium laser?

    Science.gov (United States)

    Tan, Xinji; Zhang, Xiaobo; Li, Dongjie; Chen, Xiong; Dai, Yuanqing; Gu, Jie; Chen, Mingquan; Hu, Sheng; Bai, Yao; Ning, Yu

    2018-05-01

    This study compared the safety and effectiveness of the diode laser and thulium laser during prostate transurethral vaporesection for treating benign prostate hyperplasia (BPH). We retrospectively analyzed 205 patients with BPH who underwent a diode laser or thulium laser technique for prostate transurethral vaporesection from June 2016 to June 2017 and who were followed up for 3 months. Baseline characteristics of the patients, perioperative data, postoperative outcomes, and complications were compared. We also assessed the International Prostate Symptom Score (IPSS), quality of life (QoL), maximum flow rate (Q max ), average flow rate (AFR), and postvoid residual volume (PVR) at 1 and 3 months postoperatively to evaluate the functional improvement of each group. There were no significant differences between the diode laser and thulium laser groups related to age, prostate volume, operative time, postoperative hospital stays, hospitalization costs, or perioperative data. The catheterization time was 3.5 ± 0.8 days for the diode laser group and 4.7 ± 1.8 days for the thulium laser group (p diode laser and thulium laser contributes to safe, effective transurethral vaporesection in patients with symptomatic BPH. Diode laser, however, is better than thulium laser for prostate transurethral vaporesection because of its shorter catheterization time. The choice of surgical approach is more important than the choice of laser types during clinical decision making for transurethral laser prostatectomy.

  20. Application of PIN diodes in Physics Research

    International Nuclear Information System (INIS)

    Ramirez-Jimenez, F. J.; Mondragon-Contreras, L.; Cruz-Estrada, P.

    2006-01-01

    A review of the application of PIN diodes as radiation detectors in different fields of Physics research is presented. The development and research in semiconductor technology, the use of PIN diodes in particle counting, X-and γ-ray spectroscopy, medical applications and charged particle spectroscopy are considered. Emphasis is made in the activities realized in the different research and development Mexican institutions dealing with this kind of radiation detectors

  1. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  2. Time resolved measurements of triton burnup in JET plasmas

    International Nuclear Information System (INIS)

    Conroy, S.; Jarvis, O.N.; Sadler, G.; Huxtable, G.B.

    1988-01-01

    Triton production from one branch of the deuteron-deuteron fusion reaction is routinely measured at 6 ms time intervals in JET plasma discharges by recording the 2.5 MeV neutrons produced in the other branch using a set of calibrated fission chambers. The burnup of the tritons is measured by detecting the 14 MeV t-d neutrons with a 0.2 cm 3 Si(Li) diode. The 2.5 MeV neutron flux can be used in a simple time dependent calculation based on classical slowing-down theory to predict the 14 MeV neutron flux. The measured flux and the triton slowing-down time are systematically lower than the values estimated from the key plasma parameters but the differences are within the experimental errors. (author). 19 refs, 8 figs

  3. Future Solid State Lighting using LEDs and Diode Lasers

    DEFF Research Database (Denmark)

    Petersen, Paul Michael

    2014-01-01

    applications. Within the coming years, it is expected that the efficiency of blue laser diodes will approach the efficiency of infrared diode lasers. This will enable high efficiency white light generation with very high lumen per watt values. SSL today is mainly based on phosphor converted blue light emitting......Lighting accounts for 20% of all electrical energy usage. Household lighting and commercial lighting such as public and street lighting are responsible for significant greenhouse gas emissions. Therefore, currently many research initiatives focus on the development of new light sources which shows...... significant savings. Solid state lighting (SSL) based on LEDs is today the most efficient light source for generation of high quality white light. Diode lasers, however, have the potential of being more efficient than LEDs for the generation of white light. A major advantage using diode lasers for solid state...

  4. High performance MIIM diode based on cobalt oxide/titanium oxide

    Science.gov (United States)

    Herner, S. B.; Weerakkody, A. D.; Belkadi, A.; Moddel, G.

    2017-05-01

    Optical rectennas for infrared energy harvesting commonly incorporate metal/double-insulator/metal diodes. Required diode characteristics include high responsivity and low resistance near zero bias with a sub-micron area, which have not been obtainable simultaneously. Diodes based on a new material set, Co/Co3O4/TiO2/Ti and an area of 0.071 μm2, provide a median maximum responsivity of 4.1 A/W, a median zero-bias responsivity of 1.2 A/W, and a median resistance of 14 kΩ. The highest performing diode has a maximum responsivity of 4.4 A/W, a zero-bias responsivity of 2.2 A/W, and a resistance of 18 kΩ.

  5. Iodine-stabilized single-frequency green InGaN diode laser.

    Science.gov (United States)

    Chen, Yi-Hsi; Lin, Wei-Chen; Shy, Jow-Tsong; Chui, Hsiang-Chen

    2018-01-01

    A 520-nm InGaN diode laser can emit a milliwatt-level, single-frequency laser beam when the applied current slightly exceeds the lasing threshold. The laser frequency was less sensitive to diode temperature and could be finely tuned by adjusting the applied current. Laser frequency was stabilized onto a hyperfine component in an iodine transition through the saturated absorption spectroscopy. The uncertainty of frequency stabilization was approximately 8×10 -9 at a 10-s integration time. This compact laser system can replace the conventional green diode-pumped solid-state laser and applied as a frequency reference. A single longitudinal mode operational region with diode temperature, current, and output power was investigated.

  6. Modeling of SVM Diode Clamping Three-Level Inverter Connected to Grid

    DEFF Research Database (Denmark)

    Guo, Yougui; Zeng, Ping; Zhu, Jieqiong

    2011-01-01

    PLECS is used to model the diode clamping three-level inverter connected to grid and good results are obtained. First the output voltage SVM is described for diode clamping three-level inverter with loads connected to Y. Then the output voltage SVM of diode clamping three-level inverter is simply...... analyzed with loads connected to △. But it will be further researched in the future. Third, PLECS is briefly introduced. Fourth, the modeling of diode clamping three-level inverter is briefly presented with PLECS. Finally, a series of simulations are carried out. The simulation results tell us PLECS...... is very powerful tool to real power circuits and it is very easy to simulate them. They have also verified that SVM control strategy is feasible to control the diode clamping three-level inverter....

  7. Protection Scheme for Modular Multilevel Converters under Diode Open-Circuit Faults

    DEFF Research Database (Denmark)

    Deng, Fujin; Zhu, Rongwu; Liu, Dong

    2018-01-01

    devices. The diode open-circuit fault in the submodule (SM) is an important issue for the MMC, which would affect the performance of the MMC and disrupt the operation of the MMC. This paper analyzes the impact of diode open-circuit failures in the SMs on the performance of the MMC and proposes...... a protection scheme for the MMC under diode open-circuit faults. The proposed protection scheme not only can effectively eliminate the possible caused high voltage due to the diode open-circuit fault but also can quickly detect the faulty SMs, which effectively avoids the destruction and protects the MMC....... The proposed protection scheme is verified with a downscale MMC prototype in the laboratory. The results confirm the effectiveness of the proposed protection scheme for the MMC under diode open-circuit faults....

  8. Preliminary results on a 4 kJ, 140 k A plasma focus; Resultados preliminares en un plasma foco de 4 KJ

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Patricio; Favre, Mario; Chuaqui, Hernan; Wyndham, Edmund [Pontificia Univ. Catolica de Chile, Santiago (Chile). Facultad de Fisica

    1997-12-31

    Preliminary results on the operation of a 4 kJ, 140 kA Plasma Focus device are presented. The machine operates Hydrogen and Hydrogen-Argon mixtures at pressures between 400 m Torr to 10 Torr. Main diagnostics include electric and current measurements, time and space resolved X-ray observations, with limited spectral resolution, and B-dot sensors to monitor the evolution of de current sheet during the run up phase of the discharge. The results indicate that good focus is obtained in the above pressure range. This is inferred from I-dot traces and Pin diode and pin-hole camera X-ray observations. The B-dot loops suggest that a symmetric current sheet is produced. These results show that the machine exhibits a reliable performance, which allows further studies on dense transient plasmas to be developed. (author). 5 refs., 5 figs.

  9. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    van Wanum, Maurice; Lebouille, Tom; Visser, Guido; van Vliet, Frank Edward

    2009-01-01

    Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are

  10. Planar transistors and impatt diodes with ion implantation

    International Nuclear Information System (INIS)

    Dorendorf, H.; Glawischnig, H.; Grasser, L.; Hammerschmitt, J.

    1975-03-01

    Low frequency planar npn and pnp transistors have been developed in which the base and emitter have been fabricated using ion implantation of boron and phosphorus by a drive-in diffusion. Electrical parameters of the transistors are comparable with conventionally produced transistors; the noise figure was improved and production tolerances were significantly reduced. Silicon-impatt diodes for the microwave range were also fabricated with implanted pn junctions and tested for their high frequency characteristics. These diodes, made in an improved upside down technology, delivered output power up to 40 mW (burn out power) at 30 GHz. Reverse leakage current and current carrying capability of these diodes were comparable to diffused structures. (orig.) 891 ORU 892 MB [de

  11. Design and experimental testing of air slab caps which convert commercial electron diodes into dual purpose, correction-free diodes for small field dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Charles, P. H., E-mail: paulcharles111@gmail.com [Department of Radiation Oncology, Princess Alexandra Hospital, Ipswich Road, Woolloongabba, Brisbane, Queensland 4102, Australia and School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, GPO Box 2434, Brisbane, Queensland 4001 (Australia); Cranmer-Sargison, G. [Department of Medical Physics, Saskatchewan Cancer Agency, 20 Campus Drive, Saskatoon, Saskatchewan S7L 3P6, Canada and College of Medicine, University of Saskatchewan, 107 Wiggins Road, Saskatoon, Saskatchewan S7N 5E5 (Canada); Thwaites, D. I. [Institute of Medical Physics, School of Physics, University of Sydney, New South Wales 2006 (Australia); Kairn, T. [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, GPO Box 2434, Brisbane, Queensland 4001, Australia and Genesis CancerCare Queensland, The Wesley Medical Centre, Suite 1, 40 Chasely Street, Auchenflower, Brisbane, Queensland 4066 (Australia); Crowe, S. B.; Langton, C. M.; Trapp, J. V. [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, GPO Box 2434, Brisbane, Queensland 4001 (Australia); Pedrazzini, G. [Genesis CancerCare Queensland, The Wesley Medical Centre, Suite 1, 40 Chasely Street, Auchenflower, Brisbane, Queensland 4066 (Australia); Aland, T.; Kenny, J. [Epworth Radiation Oncology, 89 Bridge Road, Richmond, Melbourne, Victoria 3121 (Australia)

    2014-10-15

    Purpose: Two diodes which do not require correction factors for small field relative output measurements are designed and validated using experimental methodology. This was achieved by adding an air layer above the active volume of the diode detectors, which canceled out the increase in response of the diodes in small fields relative to standard field sizes. Methods: Due to the increased density of silicon and other components within a diode, additional electrons are created. In very small fields, a very small air gap acts as an effective filter of electrons with a high angle of incidence. The aim was to design a diode that balanced these perturbations to give a response similar to a water-only geometry. Three thicknesses of air were placed at the proximal end of a PTW 60017 electron diode (PTWe) using an adjustable “air cap”. A set of output ratios (OR{sub Det}{sup f{sub c}{sub l}{sub i}{sub n}}) for square field sizes of side length down to 5 mm was measured using each air thickness and compared to OR{sub Det}{sup f{sub c}{sub l}{sub i}{sub n}} measured using an IBA stereotactic field diode (SFD). k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} was transferred from the SFD to the PTWe diode and plotted as a function of air gap thickness for each field size. This enabled the optimal air gap thickness to be obtained by observing which thickness of air was required such that k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} was equal to 1.00 at all field sizes. A similar procedure was used to find the optimal air thickness required to make a modified Sun Nuclear EDGE detector (EDGEe) which is “correction-free” in small field relative dosimetry. In addition, the feasibility of experimentally transferring k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r

  12. Intense pulsed light-ion beam generated by planar type self-magnetically insulated diode

    International Nuclear Information System (INIS)

    Yoshikawa, T.; Masugata, K.; Ito, M.; Matsui, M.; Yatsui, K.

    1984-01-01

    New type of ion diode named ''Planar Type Self-Magnetically Insulated Diode'' (PSID) has been developed. By using a 1.5-mm-thick-polyethylene sheet as an anode surface, we have obtained Vsub(d) (diode voltage) -- 886 kV, Isub(d) (diode current) -- 180 kA, and Isub(i) (net ion current) -- 52 kA, yielding the diode efficiency of ion production to be -- 30 %. Multiple-shots operation (more than 40 shots) has been possible with good reproducibility in such a relatively high powers above. (author)

  13. In vivo dosimetry with silicon diodes in total body irradiation

    International Nuclear Information System (INIS)

    Oliveira, F.F.; Amaral, L.L.; Costa, A.M.; Netto, T.G.

    2014-01-01

    The aim of this work is the characterization and application of silicon diode detectors for in vivo dosimetry in total body irradiation (TBI) treatments. It was evaluated the diode response with temperature, dose rate, gantry angulations and field size. A maximum response variation of 2.2% was obtained for temperature dependence. The response variation for dose rate and angular was within 1.2%. For field size dependence, the detector response increased with field until reach a saturation region, where no more primary radiation beam contributes for dose. The calibration was performed in a TBI setup. Different lateral thicknesses from one patient were simulated and then the calibration factors were determined by means of maximum depth dose readings. Subsequent to calibration, in vivo dosimetry measurements were performed. The response difference between diode readings and the prescribed dose for all treatments was below 4%. This difference is in agreement as recommended by the International Commission on Radiation Units and Measurements (ICRU), which is ±5%. The present work to test the applicability of a silicon diode dosimetry system for performing in vivo dose measurements in TBI techniques presented good results. These measurements demonstrated the value of diode dosimetry as a treatment verification method and its applicability as a part of a quality assurance program in TBI treatments. - Highlights: ► Characterization of a silicon diode dosimetry system. ► Application of the diodes for in vivo dosimetry in total body irradiation treatments. ► Implementation of in vivo dosimetry as a part of a quality assurance program in radiotherapy

  14. Direct-current polarization characteristics of various AlGaAs laser diodes

    Science.gov (United States)

    Fuhr, P. L.

    1984-01-01

    Polarization characteristics of AlGaAs laser diodes having various device geometries have been measured. Measurements were performed with the laser diodes operating under dc conditions. Results show that laser diodes having different device geometries have optical outputs that exhibit varying degrees of polarization purity. Implications of this result, with respect to incoherent polarization-beam combining, are addressed.

  15. Characterization of High-power Quasi-cw Laser Diode Arrays

    Science.gov (United States)

    Stephen, Mark A.; Vasilyev, Aleksey; Troupaki, Elisavet; Allan, Graham R.; Kashem, Nasir B.

    2005-01-01

    NASA s requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance and comprehensive characterization data of Quasi-CW, High-power, laser diode arrays is presented.

  16. V-shaped resonators for addition of broad-area laser diode arrays

    Science.gov (United States)

    Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

    2012-12-25

    A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

  17. Ge/Si (100) heterojunction photodiodes fabricated from material grown by low-energy plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Osmond, Johann; Isella, Giovanni; Chrastina, Daniel; Kaufmann, Rolf; Kaenel, Hans von

    2008-01-01

    We have fabricated a series of p-i-n Ge/Si heterojunction photodetectors with different thicknesses of the intrinsic Ge layer, different doping levels of the p and n layers and different diode diameters. Epitaxial Ge was deposited on Si(100) using low-energy plasma-enhanced CVD (LEPECVD) followed by cyclic annealing. Dark current values as low as 0.04 mA/cm 2 were achieved for 1 μm thick p-i-n photodiodes on lightly doped substrates at - 1 V bias, and external quantum efficiencies of 56% at 1.30 μm and 44% at 1.55 μm for 3 μm thick p + -i-n + photodiodes on highly doped substrates under 0.5 V reverse bias. For a 30 μm diameter diode a RC frequency of 21 GHz is obtained at a reverse bias of 1 V. With such characteristics, these diodes are attractive for telecommunication and optoelectronic applications

  18. Visible-light imaging MHD studies of the edge plasma in the JIPP-T-IIU tokamak

    International Nuclear Information System (INIS)

    Yamazaki, K.; Haba, K.; Hirokura, S.

    1984-06-01

    MHD activity and turbulence near the plasma edge are studied on the JIPP-T-IIU tokamak using a new high-speed visible-light image-converter video-camera system. Different from conventional cinefilm and photo-diode array systems, this system is convenient for the instantaneous display of the high-speed optical plasma images after plasma discharges. The effectiveness of this instrument for the research of the plasma wall interaction is demonstrated in this experiment. The observed characteristics on the edge-plasma behavior are as follows: (1) The helical mode structure of the luminous plasma boundary suggesting plasma-surface interaction is identified in the case of OH or ICRF-heated discharge. (2) In the LH-current drive case, no clear large-scale coherent modes are identified, however, on the initial stage a medium-scale turbulence (lambda-- a few cm, f -- ten kHz) is found. (3) Before current disruptions, an m=2 or m=3 helical mode is found and up-down asymmetric light emissions are often observed during disruptions. (author)

  19. Tunable high-power narrow-linewidth green external-cavity GaN diode laser

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2016-01-01

    A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system.......A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system....

  20. Investigation on a radiation tolerant betavoltaic battery based on Schottky barrier diode

    International Nuclear Information System (INIS)

    Liu Yebing; Hu Rui; Yang Yuqing; Wang Guanquan; Luo Shunzhong; Liu Ning

    2012-01-01

    An Au–Si Schottky barrier diode was studied as the energy conversion device of betavoltaic batteries. Its electrical performance under radiation of Ni-63 and H-3 sources and radiation degradation under Am-241 were investigated and compared with those of the p–n junction. The results show that the Schottky diode had a higher I sc and harder radiation tolerance but lower V oc than the p–n junction. The results indicated that the Schottky diode can be a promising candidate for energy conversion of betavoltaic batteries. - Highlights: ► The Schottky diode was used as the converter of the betavoltaic battery. ► The radiation damage of converter was accelerated by using alpha particles. ► The Schottky diode has higher radiation resistance than that of the p–n junction. ► The Schottky diode could still be a promising converter of the betavoltaic battery.

  1. Simplified atom trap using a single microwave modulated diode laser

    International Nuclear Information System (INIS)

    Newbury, N.R.; Myatt, C.J.; Wieman, C.E.

    1993-01-01

    We have demonstrated microwave modulation of a diode laser which is operated with optical feedback from a diffraction grating. By directly modulating the diode laser current at frequencies up to 6.8 GHz, we observed 2-30% of the laser power in a single sideband for 20mW of microwave power. Using such a diode laser modulated at 6.6GHz, we have trapped 87 Rb in a vapor cell. With 10mW of microwave power, the number of trapped atoms was only 15% smaller than the number obtained using two lasers in the conventional manner. A microwave modulated diode laser should also be useful for driving stimulated Raman transitions between the hyperfine levels of Rb or Cs

  2. Gamma and electron high dose dosimetry with rad-hard Si diodes

    International Nuclear Information System (INIS)

    Pascoalino, Kelly Cristina da Silva

    2014-01-01

    In this work the main dosimetric characteristics of rad-hard Float Zone (FZ) and magnetic Czochralski (MCz) diodes to electrons (1.5 MeV) and gamma ( 60 Co) radiation are evaluated. The dosimetric system proposed is based on electrical current measurements due to radiation interactions on the devices. The batch response uniformity was studied for the n-type FZ diodes irradiated with gamma rays. The coefficient of variation of the current measurement was about 1.25% at 5 kGy of accumulated dose. A sensitivity decrease with the increase of the accumulated dose (Total Ionizing Dose - TID) was observed for both FZ and MCz diodes. For gamma irradiation, these effect is more pronounced for n-type or smaller resistivity diodes. Two types of dosimetric probe were used on the electron irradiation procedures, one of them specially designed to avoid the deterioration of the electrical contacts and the diodes metallization. The sensitivity of the preirradiated FZ and MCz diodes fell about 10% and 40%, respectively, during electron irradiation at 1.25 MGy of accumulated dose. The effect of electron radiation damage on the electrical properties of the diodes was studied by the means of leakage current and capacitance measurements as a function of bias voltage. The leakage current increases with the accumulated dose but does not contributes significantly to the current signal, since the diodes are operated in photovoltaic mode, without bias voltage. For the MCz diode no change in the full depletion voltage was observed, which indicates its higher tolerance to radiation-induced damage, as expected. During electron irradiation the temperature increases and in order to determine its influence for the current signals, the leakage current values were extrapolated up to 35 °C. The contribution does not exceed 0.1% for FZ and MCz diodes. The effect of the radiation type, electrons or gamma rays, on the pre dose procedures was analyzed for the FZ n-type device and was observed that the

  3. DFB laser diodes for sensing applications using photoacoustic spectroscopy

    International Nuclear Information System (INIS)

    Koeth, J; Fischer, M; Legge, M; Seufert, J; Roessner, K; Groninga, H

    2010-01-01

    We present typical device characteristics of novel DFB laser diodes which are employed in various sensing applications including high resolution photoacoustic spectroscopy. The laser diodes discussed are based on a genuine fabrication technology which allows for the production of ultra stable devices within a broad spectral range from 760 nm up to 3000 nm wavelength. The devices exhibit narrow linewidths down to <1 MHz which makes them ideally suited for all photoacoustic sensing applications where a high spectral purity is required. As an example we will focus on a typical medical application where these diodes are used for breath analysis using photoacoustic spectroscopy.

  4. Simulated electron affinity tuning in metal-insulator-metal (MIM) diodes

    Science.gov (United States)

    Mistry, Kissan; Yavuz, Mustafa; Musselman, Kevin P.

    2017-05-01

    Metal-insulator-metal diodes for rectification applications must exhibit high asymmetry, nonlinearity, and responsivity. Traditional methods of improving these figures of merit have consisted of increasing insulator thickness, adding multiple insulator layers, and utilizing a variety of metal contact combinations. However, these methods have come with the price of increasing the diode resistance and ultimately limiting the operating frequency to well below the terahertz regime. In this work, an Airy Function Transfer Matrix simulation method was used to observe the effect of tuning the electron affinity of the insulator as a technique to decrease the diode resistance. It was shown that a small increase in electron affinity can result in a resistance decrease in upwards of five orders of magnitude, corresponding to an increase in operating frequency on the same order. Electron affinity tuning has a minimal effect on the diode figures of merit, where asymmetry improves or remains unaffected and slight decreases in nonlinearity and responsivity are likely to be greatly outweighed by the improved operating frequency of the diode.

  5. Dust generation at interaction of plasma jet with surfaces

    Science.gov (United States)

    Ticos, Catalin; Toader, Dorina; Banu, Nicoleta; Scurtu, Adrian; Oane, Mihai

    2013-10-01

    Coatings of W and C with widths of a few microns will be exposed to plasma jet for studying the erosion of the surface and detachment of micron size dust particles. A coaxial plasma gun has been built inside a vacuum chamber for producing supersonic plasma jets. Its design is based on a 50 kJ coaxial plasma gun which has been successfully used for accelerating hypervelocity dust. Initial shots were carried out for a capacitor bank with C = 12 μF and charged up to 2 kV. Currents of tens of amps were measured with a Rogowsky coil and plasma flow speeds of 4 km/s were inferred from high-speed images of jet propagation. An upgrade consisting in adding capacitors in parallel will be performed in order to increase the energy up to 2 kJ. A coil will be installed at the gun muzzle to compress the plasma flow and increase the energy density of the jet on the sample surface. A CCD camera with a maximum recording speed of 100 k fps and a maximum resolution of 1024 × 1024 pixels was set for image acquisition of the plasma and dust. A laser system used to illuminate the ejected dust from the surface includes a laser diode emitting at 650 nm with a beam power of 25 mW. The authors acknowledge support from EURATOM WP13-IPH-A03-P2-02-BS22.

  6. Analysis of InP-based single photon avalanche diodes based on a single recess-etching process

    Science.gov (United States)

    Lee, Kiwon

    2018-04-01

    Effects of the different etching techniques have been investigated by analyzing electrical and optical characteristics of two-types of single-diffused single photon avalanche diodes (SPADs). The fabricated two-types of SPADs have no diffusion depth variation by using a single diffusion process at the same time. The dry-etched SPADs show higher temperature dependence of a breakdown voltage, larger dark-count-rate (DCR), and lower photon-detection-efficiency (PDE) than those of the wet-etched SPADs due to plasma-induced damage of dry-etching process. The results show that the dry etching damages can more significantly affect the performance of the SPADs based on a single recess-etching process.

  7. 15-MeV proton emission from ICRF-heated plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Jarvis, O N; Conroy, S W; Hone, M; Sadler, G J; Van Belle, P [Commission of the European Communities, Luxembourg (Luxembourg)

    1994-07-01

    {sup 3} He-d fusion reaction protons emitted from ICRF-heated discharges were recorded with a silicon diode detector installed in the JET tokamak. The detection rates demonstrated that sawtooth crashes eject fast particles from the inner region of the plasma. The energy spectra of the fusion product protons using H minority provided evidence for the second harmonic acceleration of deuterons at sub-MW levels of RF power and those with {sup 3} He minority did not possess the expected twin-lobed shape predicted by kinematics calculations. (authors). 5 refs., 6 figs.

  8. 15-MeV proton emission from ICRF-heated plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Jarvis, O.N.; Conroy, S.W.; Hone, M.; Sadler, G.J.; Belle, P. van [Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking

    1994-12-31

    {sup 3}He-d fusion reaction protons emitted from ICRF-heated discharges were recorded with a silicon diode detector installed in the Joint European Torus (JET). The detection rates demonstrated that sawtooth crashes eject fast particles from the inner region of the plasma. The energy spectra of the fusion product protons using H minority provided evidence for the second harmonic acceleration of deuterons at sub-MW levels of RF power and those with {sup 3}He minority did not possess the expected twin-lobed shape predicted by kinematics calculations. (author) 5 refs., 6 figs.

  9. Diode lasers and their applications in spectrometry

    International Nuclear Information System (INIS)

    Pavone, F.S.

    1997-01-01

    The impact of semiconductor diode laser in different fields ranging from communications to spectroscopy is becoming huge and pushes the research into developing sources satisfying the different requirements. For applications related to trace gas detection, the low amplitude noise in the light source of semiconductor diode laser is sufficient to obtain interesting results. Trace gas of molecular species as methane is interesting for different reason: it plays an important role in both radiative transport an photochemistry in the atmosphere

  10. Zener Diode Compact Model Parameter Extraction Using Xyce-Dakota Optimization.

    Energy Technology Data Exchange (ETDEWEB)

    Buchheit, Thomas E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wilcox, Ian Zachary [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandoval, Andrew J [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Reza, Shahed [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-12-01

    This report presents a detailed process for compact model parameter extraction for DC circuit Zener diodes. Following the traditional approach of Zener diode parameter extraction, circuit model representation is defined and then used to capture the different operational regions of a real diode's electrical behavior. The circuit model contains 9 parameters represented by resistors and characteristic diodes as circuit model elements. The process of initial parameter extraction, the identification of parameter values for the circuit model elements, is presented in a way that isolates the dependencies between certain electrical parameters and highlights both the empirical nature of the extraction and portions of the real diode physical behavior which of the parameters are intended to represent. Optimization of the parameters, a necessary part of a robost parameter extraction process, is demonstrated using a 'Xyce-Dakota' workflow, discussed in more detail in the report. Among other realizations during this systematic approach of electrical model parameter extraction, non-physical solutions are possible and can be difficult to avoid because of the interdependencies between the different parameters. The process steps described are fairly general and can be leveraged for other types of semiconductor device model extractions. Also included in the report are recommendations for experiment setups for generating optimum dataset for model extraction and the Parameter Identification and Ranking Table (PIRT) for Zener diodes.

  11. Thermal diode made by nematic liquid crystal

    Energy Technology Data Exchange (ETDEWEB)

    Melo, Djair, E-mail: djfmelo@gmail.com [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Fernandes, Ivna [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Moraes, Fernando [Departamento de Física, CCEN, Universidade Federal da Paraíba, Caixa Postal 5008, 58051-900, João Pessoa, PB (Brazil); Departamento de Física, Universidade Federal Rural de Pernambuco, 52171-900 Recife, PE (Brazil); Fumeron, Sébastien [Institut Jean Lamour, Université de Lorraine, BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre les Nancy (France); Pereira, Erms [Escola Politécnica de Pernambuco, Universidade de Pernambuco, Rua Benfíca, 455, Madalena, 50720-001 Recife, PE (Brazil)

    2016-09-07

    This work investigates how a thermal diode can be designed from a nematic liquid crystal confined inside a cylindrical capillary. In the case of homeotropic anchoring, a defect structure called escaped radial disclination arises. The asymmetry of such structure causes thermal rectification rates up to 3.5% at room temperature, comparable to thermal diodes made from carbon nanotubes. Sensitivity of the system with respect to the heat power supply, the geometry of the capillary tube and the molecular anchoring angle is also discussed. - Highlights: • An escaped radial disclination as a thermal diode made by a nematic liquid crystal. • Rectifying effects comparable to those caused by carbon and boron nitride nanotubes. • Thermal rectification increasing with radius and decreasing with height of the tube. • Asymmetric BCs cause rectification from the spatial asymmetry produced by the escape. • Symmetric BCs provide rectifications smaller than those yields by asymmetric BCs.

  12. Maximum time-dependent space-charge limited diode currents

    Energy Technology Data Exchange (ETDEWEB)

    Griswold, M. E. [Tri Alpha Energy, Inc., Rancho Santa Margarita, California 92688 (United States); Fisch, N. J. [Princeton Plasma Physics Laboratory, Princeton University, Princeton, New Jersey 08543 (United States)

    2016-01-15

    Recent papers claim that a one dimensional (1D) diode with a time-varying voltage drop can transmit current densities that exceed the Child-Langmuir (CL) limit on average, apparently contradicting a previous conjecture that there is a hard limit on the average current density across any 1D diode, as t → ∞, that is equal to the CL limit. However, these claims rest on a different definition of the CL limit, namely, a comparison between the time-averaged diode current and the adiabatic average of the expression for the stationary CL limit. If the current were considered as a function of the maximum applied voltage, rather than the average applied voltage, then the original conjecture would not have been refuted.

  13. An all-silicon passive optical diode.

    Science.gov (United States)

    Fan, Li; Wang, Jian; Varghese, Leo T; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao

    2012-01-27

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.

  14. The electron irradiation effects in different structures of diodes

    International Nuclear Information System (INIS)

    Li Quanfen; Wang Jiaxu

    1993-01-01

    This paper describes the different electron irradiation effects in different structures of diodes and the different results produced by different irradiation ways. From this work, we can know how to choose proper manufacture arts and comprehensive factors according to the structures of diodes and the irradiation conditions

  15. The danger of semiconductor laser diode radiation to the human eye

    International Nuclear Information System (INIS)

    Nier, J.

    1977-01-01

    The UVV 'Laserstrahlen' (laser beam regulation) sets maximum permissible values for radiation exposure that must not be exceeded on the cornea or skin (wavelength range 200 to 1400nm; cornea values: Normal pulsed operation 5 x 10 -7 Ws/cm 2 , continuous operation (>0.1s)5 x 10 -6 W/cm 2 ). Especially laser diodes emitting in the near infrared invite careless handling, of which this paper warns by a detailed illustration of the danger involved and by numerical examples. Data are given on two commercial laser diodes, a continuous operation diode (continuous power 5mW) and a pulse diode (peak pwer 1W, pulse duration 0.2μs), as well as data on aperture angles and geometrical dimensions. Critical cornea and skin distances are distinguished below which the exposure of cornea and skin in the axis of the emission beam is dangerous. For the unfavourable conditions of focussing with a lens (f = 4cm), the following critical cornea distances are obtained: Continuous diode 2.5 km; pulse diode 23.5m. Calculation formulas for special cases are given. (orig.) 891 MG [de

  16. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.

    2016-12-29

    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

  17. Pseudo-diode based on protonic/electronic hybrid oxide transistor

    Science.gov (United States)

    Fu, Yang Ming; Liu, Yang Hui; Zhu, Li Qiang; Xiao, Hui; Song, An Ran

    2018-01-01

    Current rectification behavior has been proved to be essential in modern electronics. Here, a pseudo-diode is proposed based on protonic/electronic hybrid indium-gallium-zinc oxide electric-double-layer (EDL) transistor. The oxide EDL transistors are fabricated by using phosphorous silicate glass (PSG) based proton conducting electrolyte as gate dielectric. A diode operation mode is established on the transistor, originating from field configurable proton fluxes within the PSG electrolyte. Current rectification ratios have been modulated to values ranged between ˜4 and ˜50 000 with gate electrode biased at voltages ranged between -0.7 V and 0.1 V. Interestingly, the proposed pseudo-diode also exhibits field reconfigurable threshold voltages. When the gate is biased at -0.5 V and 0.3 V, threshold voltages are set to ˜-1.3 V and -0.55 V, respectively. The proposed pseudo-diode may find potential applications in brain-inspired platforms and low-power portable systems.

  18. Thermal sensor based zinc oxide diode for low temperature applications

    Energy Technology Data Exchange (ETDEWEB)

    Ocaya, R.O. [Department of Physics, University of the Free State (South Africa); Al-Ghamdi, Ahmed [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589 (Saudi Arabia); El-Tantawy, F. [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt); Center of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Farooq, W.A. [Department of Physics and Astronomy, College of Science, King Saud University, Riyadh (Saudi Arabia); Yakuphanoglu, F., E-mail: fyhan@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589 (Saudi Arabia); Department of Physics, Faculty of Science, Firat University, Elazig, 23169 (Turkey)

    2016-07-25

    The device parameters of Al/p-Si/Zn{sub 1-x}Al{sub x}O-NiO/Al Schottky diode for x = 0.005 were investigated over the 50 K–400 K temperature range using direct current–voltage (I–V) and impedance spectroscopy. The films were prepared using the sol–gel method followed by spin-coating on p-Si substrate. The ideality factor, barrier height, resistance and capacitance of the diode were found to depend on temperature. The calculated barrier height has a mean. Capacitance–voltage (C–V) measurements show that the capacitance decreases with increasing frequency, suggesting a continuous distribution of interface states over the surveyed 100 kHz to 1 MHz frequency range. The interface state densities, N{sub ss}, of the diode were calculated and found to peak as functions of bias and temperature in two temperature regions of 50 K–300 K and 300 K–400 K. A peak value of approximately 10{sup 12}/eV cm{sup 2} was observed around 0.7 V bias for 350 K and at 3 × 10{sup 12}/eVcm{sup 2} around 2.2 V bias for 300 K. The relaxation time was found to average 4.7 μs over all the temperatures, but showing its lowest value of 1.58 μs at 300 K. It is seen that the interface states of the diode is controlled by the temperature. This suggests that Al/p-Si/Zn1-xAlxO-NiO/Al diode can be used as a thermal sensors for low temperature applications. - Highlights: • Al/pSi/Zn1-xAlxO-NiO/Al Schottky diode was fabricated by sol gel method. • The interface state density of the diode is controlled by the temperature. • Zinc oxide based diode can be used as a thermal sensor for low temperature applications.

  19. Characteristics of ion beam and anode plasma in open-quotes Point Pinch Diodeclose quotes

    International Nuclear Information System (INIS)

    Masugata, K.; Yatsui, K.; Tazima, T.

    1993-01-01

    Diagnostics and evaluation have been carried out on an ion beam and anode plasma in open-quotes Point Pinch Diode.close quotes Mass spectra of ion beam measured by Thomson-parabola spectrometer have shown that the main component are (1) proton and H 2 + , (2) highly ionized carbon and oxygen ions, and (3) singly ionized C, O and molecules such as CO 2 + , OH + , OH 2 + . X-ray and particle pinhole images have shown the size of the electron beam on the plasma to be less than ∼0.5 mm in diameter, in which fine structures are found with size less than 0.05 mm. A K α satelite line of Al V is observed with crystal spectrograph, which indicates the existence of Al 4+ in the plasma

  20. A new fabrication technique for back-to-back varactor diodes

    Science.gov (United States)

    Smith, R. Peter; Choudhury, Debabani; Martin, Suzanne; Frerking, Margaret A.; Liu, John K.; Grunthaner, Frank A.

    1992-01-01

    A new varactor diode process has been developed in which much of the processing is done from the back of an extremely thin semiconductor wafer laminated to a low-dielectric substrate. Back-to-back BNN diodes were fabricated with this technique; excellent DC and low-frequency capacitance measurements were obtained. Advantages of the new technique relative to other techniques include greatly reduced frontside wafer damage from exposure to process chemicals, improved capability to integrate devices (e.g. for antenna patterns, transmission lines, or wafer-scale grids), and higher line yield. BNN diodes fabricated with this technique exhibit approximately the expected capacitance-voltage characteristics while showing leakage currents under 10 mA at voltages three times that needed to deplete the varactor. This leakage is many orders of magnitude better than comparable Schottky diodes.

  1. Experimental investigations of interaction of supercritical electron beams with plasma

    International Nuclear Information System (INIS)

    Chupikov, P.T.; Medvedev, D.V.; Onishchenko, I.N.; Panasenko, B.D.; Faehl, R.J.

    2002-01-01

    The first section of the collective ions acceleration based on simultaneous temporal and spatial modulation of relativistic electron beam (REB) was studied experimentally. The virtual cathode was originated in the electrodynamic structure consisting of two tubes with different diameters (jump of electrodynamics) by REB, produced in magnetically insulated diode. At plasma assistance the low-frequency oscillations of REB current and the low-frequency microwave radiation were obtained due to the virtual cathode periodical relaxation in the processes of charge compensation by ionized residual gas

  2. Dosimetric properties characterization of silicon diodes used in photon beam radiotherapy

    International Nuclear Information System (INIS)

    Bizetto, Cesar Augusto

    2013-01-01

    In the current work it was studied the performance of epitaxial (EPI) and float zone (FZ) silicon diodes as on-line dosimeters for megavoltage (EPI diode) and orthovoltage (EPI and FZ diode) photon beam radiotherapy. In order to be used as dosimeters the diodes were enclosed in black polymethylmethacrylate (PMMA) probes. The devices were then connected, on photovoltaic mode, to an electrometer Keithley® 6517B to allow measurements of the photocurrent. The irradiations were performed with 6 and 18 MV photon beams (Siemens Primus® linear accelerator), 6 and 15 MV (Novalis TX®) and 10, 25, 30 and 50 kV of a Pantak / Seifert X ray radiation device. During the measurements with the Siemens Primus the diodes were held between PMMA plates placed at 10.0 cm depth. When using Novalis TX® the devices were held between solid water plates placed at 50 cm depth. In both cases the diodes were centered in a radiation field of 10 x 10 cm 2 , with the source-to-surface distance (SSD) kept at 100 cm. In measurements with orthovoltage photon beams the diodes were placed 50.0 cm from the tube in a radiation field of 8 cm diameter. The dose-rate dependency was studied for 6 and 15 MV (varying the dose-rate from 100 to 600 monitor units per minute) and for the 50 kV beam by varying the current tube from 2 to 20 mA. All devices showed linear response with dose rate and, within uncertainties the charge collected is independent of dose rate. The current signals induced showed good instantaneous repeatability of the diodes, characterized by coefficients of variation of current (CV) smaller than 1.14% (megavoltage beams) and 0.15% for orthovoltage beams and coefficients of variation of charge (CV) smaller than 1.84% (megavoltage beams) and 1.67% (orthovoltage beams). The dose response curves were quite linear with linear correlation coefficients better than 0.9999 for all diodes. (author)

  3. Thermometric Property of a Diode.

    Science.gov (United States)

    Inman, Fred W.; Woodruff, Dan

    1995-01-01

    Presents a simple way to implement the thermometric property of a semiconductor diode to produce a thermometer with a nearly linear dependence upon temperature over a wide range of temperatures. (JRH)

  4. Electrically driven surface plasmon light-emitting diodes

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

    We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

  5. Pulse power applications of silicon diodes in EML capacitive pulsers

    Science.gov (United States)

    Dethlefsen, Rolf; McNab, Ian; Dobbie, Clyde; Bernhardt, Tom; Puterbaugh, Robert; Levine, Frank; Coradeschi, Tom; Rinaldi, Vito

    1993-01-01

    Crowbar diodes are used for increasing the energy transfer from capacitive pulse forming networks. They also prevent voltage reversal on the energy storage capacitors. 52 mm diameter diodes with a 5 kV reverse blocking voltage, rated 40 kA were successfully used for the 32 MJ SSG rail gun. An uprated diode with increased current capability and a 15 kV reverse blocking voltage has been developed. Transient thermal analysis has predicted the current ratings for different pulse length. Analysis verification is obtained from destructive testing.

  6. Study of PIN diode energy traps created by neutrons

    International Nuclear Information System (INIS)

    Sopko, V; Dammer, J; Sopko, B; Chren, D

    2013-01-01

    Characterization of radiation defects is still ongoing and finds greater application in the increasing radiation doses on semiconductor detectors in experiments. Studying the changes of silicon PIN diode for high doses of radiation is the fundamental motivation for our measurements. In this article we describe the behavior of the PIN diode and development of the disorder caused by neutrons from a 252Cf and doses up to 8 Gy. The calibration curve for PIN diode shows the effect of disorders as the changes of the voltampere characteristics depending on the dose of neutron irradiation. The measured values for defects are in good agreement with created energy traps.

  7. Electron collector and ion species experiments on the LION extractor ion diode

    International Nuclear Information System (INIS)

    Rondeau, G.; Greenly, J.B.; Hammer, D.A.; Horioka, K.; Meyerhofer, D.D.

    1987-01-01

    Studies of the effects of an electron collector on the electron flow in an ion diode and on diode impedance history are being done with an extractor geometry ion diode (B/sub r/ magnetic insulation field) on the LION accelerator (1.5 MV, 4Ω, 40 ns). The collector is a flux-penetrable metal protrusion on the inner radius of the anode that collects electrons. This device increases the diode operating impedance particularly during the later part of the pulse when the diode impedance collapses without the collector. In the present set of experiments, several thin wires are inserted into the anode and allowed to protrude a few millimeters into the A-K gap. These wires are damaged by the electron flow during the pulse and by measuring the length of the remaining wire, the distance of the electron layer from the anode can be inferred. The ion current density is also measured in three radial locations across the diode, giving a measure, through the Child-Langmuir law, of the effective gap spacing between the anode and the electron sheath. A simple model is proposed to account for the scaling of ion current density with the diode voltage observed in the experiment

  8. Spherical distribution structure of the semiconductor laser diode stack for pumping

    International Nuclear Information System (INIS)

    Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

    2011-01-01

    A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

  9. In Vivo Diode Dosimetry for Imrt Treatments Generated by Pinnacle Treatment Planning System

    International Nuclear Information System (INIS)

    Alaei, Parham; Higgins, Patrick D.; Gerbi, Bruce J.

    2009-01-01

    Dose verification using diodes has been proposed and used for intensity modulated radiation therapy (IMRT) treatments. We have previously evaluated diode response for IMRT deliveries planned with the Eclipse/Helios treatment planning system. The Pinnacle treatment planning system generates plans that are delivered in a different fashion than Eclipse. Whereas the Eclipse-generated segments are delivered in organized progression from one side of each field to the other, Pinnacle-generated segments are delivered in a much more randomized fashion to different areas within the field. This makes diode measurements at a point more challenging because the diode may be exposed fully or partially to multiple small segments during one single field's treatment as opposed to being exposed to very few segments scanning across the diode during an Eclipse-generated delivery. We have evaluated in vivo dosimetry for Pinnacle-generated IMRT plans and characterized the response of the diode to various size segments on phantom. We present results of patient measurements on approximately 300 fields, which show that 76% of measurements agree to within 10% of the treatment-plan generated calculated doses. Of the other 24%, about 11% are within 15% of the calculated dose. Comparison of these with phantom measurements indicates that many of the discrepancies are due to diode positioning on patients and increased diode response at short source-to-surface distances (SSDs), with the remainder attributable to other factors such as segment size and partial irradiation of the diode

  10. Investigation of thermometrical characteristics of p+–n-GaP diodes

    Directory of Open Access Journals (Sweden)

    Sypko N. I.

    2008-12-01

    Full Text Available The method of reception of p+–n-diode epitaxial structures of GaP from liquid phase is developed. In the temperature range of 80—520 K thermometric and current-voltage characteristics of test models of diode temperature sensors are measured and their basic technical parameters are determined. Perspectivity of developed GaP-diodes application as sensitive elements of high-temperature sensor is shown.

  11. Extremely high-brightness kW-class fiber coupled diode lasers with wavelength stabilization

    Science.gov (United States)

    Huang, Robin K.; Chann, Bien; Glenn, John D.

    2011-06-01

    TeraDiode has produced ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Higher brightness fiber-coupled diode lasers, including a module with 418 W of power coupled to a 100 μm, 0.15 NA fiber, have also been demonstrated.

  12. Experimental investigation of the hot point generation in the Z pinch plasma

    International Nuclear Information System (INIS)

    Afonin, V.I.; Podgornov, V.A.; Litvin, D.N.; Senik, A.V.

    1999-01-01

    Experiments to explode thin composite (W-Al-W, W-SiO 2 -W) wires in SIGNAL fast high-current generator diode under about 200 kA load current amplitude and about 50 ns rise duration were carried out to study the possibility to control generation of hot point in Z pinch plasma. The parameters of generated hot points were studied using X-ray techniques. Analysis of the experiment results shows the possibility to control this process [ru

  13. Origin of Negative Capacitance in Bipolar Organic Diodes

    Science.gov (United States)

    Niu, Quan; Crǎciun, N. Irina; Wetzelaer, Gert-Jan A. H.; Blom, Paul W. M.

    2018-03-01

    Negative differential capacitance (NC) occurring at low frequencies in organic light-emitting diodes (OLEDs) is a poorly understood phenomenon. We study the origin of the NC effect by systematically varying the number of electron traps in OLEDs based on the polymeric semiconductor poly(p -phenylene vinylene). Increasing the electron trap density enhances the NC effect. The magnitude and observed decrease of the relaxation time is consistent with the (inverse) rate of trap-assisted recombination. The absence of NC in a nearly trap-free light-emitting diode unambiguously shows that trap-assisted recombination is the responsible mechanism for the negative contribution to the capacitance in bipolar organic diodes. Our results reveal that the NC effect can be exploited to quantitatively determine the number of traps in organic semiconductors in a nondestructive fashion.

  14. Response of STFZ diode as on-line gamma dosimeter in radiation processing

    International Nuclear Information System (INIS)

    Camargo, Fabio de; Goncalves, Josemary A.C.; Pascoalino, Kelly C.; Bueno, Carmen C.; Tuominen, Eija; Tuovinen, Esa; Haerkoenen, Jaakko

    2009-01-01

    In this work, it is presented the results obtained with this rad-hard STFZ silicon diode as a high-dose gamma dosimeter. This device is a p + /n/n + junction diode, made on FZ Si wafer manufactured by Okmetic Oyj., Vantaa, Finland and processed by the Microelectronics Center of Helsinki University of Technology. The results obtained about the photocurrent registered and total charge accumulated on the diode as a function of the total absorbed dose are presented. The diodes' response showed a significant saturation effect for total absorbed doses higher than approximately 15 kGy. To reduce this effect, some STFZ samples have been pre-irradiated with gamma rays at accumulated dose of 700 kGy in order to saturate the trap production in the diode's sensitive volume. (author)

  15. Deep diode atomic battery

    International Nuclear Information System (INIS)

    Anthony, T.R.; Cline, H.E.

    1977-01-01

    A deep diode atomic battery is made from a bulk semiconductor crystal containing three-dimensional arrays of columnar and lamellar P-N junctions. The battery is powered by gamma rays and x-ray emission from a radioactive source embedded in the interior of the semiconductor crystal

  16. Spin-photon entangling diode

    DEFF Research Database (Denmark)

    Flindt, Christian; Sørensen, A. S.; Lukin, M. D.

    2007-01-01

    We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

  17. Relativistic properties of spherical diodes with a radial electron flux

    International Nuclear Information System (INIS)

    Chetvertkov, V.I.

    1987-01-01

    Forward and backward electron diodes with concentric spherical electrodes (inner cathode, outer anode or vice versa) are considered under the assumption that the emission is limited by the space charge and the guiding magnetic field is predominantly radial within a region of solid angle α f < 4π bounding the electron flux. The Poisson equations for the relativistic factor γ are solved for generalized model dependences. Ultrarelativistic and new nonrelativistic solutions are found, and analytic approximations to the solution near the cathode are used to carry out numerical calculations. The characteristics of forward and backward diodes turn out to be related to the exact solutions for a planar diode. Accurate approximations are found for calculating the diode parameters in a wide range of voltages; they can also be used to check the validity of the 3/2 laws and the ultrarelativistic solutions

  18. Personal neutron diode dosemeter

    International Nuclear Information System (INIS)

    Barthe, J.; Lahaye, T.; Moiseev, T.; Portal, G.

    1993-01-01

    The control and management of neutron doses, received by workers in nuclear power or research facilities, requires a knowledge of cumulated dose equivalent or dose equivalent rate in real time. Individual dosemeters so far developed for this purpose are scarce and not very satisfactory. Passive dosemeters such as TLD systems based on the albedo effect, nuclear emulsions or solid track detectors, do not give sufficiently accurate measurements. Furthermore, the increase in the quality factor and the more restrictive new ICRP recommendations diminish the maximum admissible threshold making currently used systems obsolete. Other than bubble dosemeter systems, based on thermodynamic effects of a superheated gel, no simple electronic device is available at the present time. The development of diode based dosimetric gamma badges, having a size similar to that of credit cards, has stimulated us to design and develop a personal neutron dosemeter based on a double diode system. The results obtained are very encouraging and practical models should become available in the near future. (author)

  19. Fine tuning power diodes with irradiation

    International Nuclear Information System (INIS)

    Tarneja, K.S.; Bartko, J.; Johnson, J.E.

    1976-01-01

    Diodes of a particular type are fine tuned with irradiation to optimize the reverse recovery time while minimizing forward voltage drop and providing more uniform electrical characcteristics. The initial and desired minority carrier lifetimes in the anode region of the type are determined as a function of forward voltage drop and reverse recovery time, and the minority carrier radiation damage factor is determined for a desired type of diode and radiation source. The radiation dosage to achieve the desired carrier lifetime with the radiation source is thereafter determined from the function 1/tau = 1/tau 0 + K phi, where tau is the desired minority carrier lifetime, tau 0 is the initial minority carrier lifetime, K is the determined minority carrier radiation damage factor and phi is the radiation dosage. A major surface and preferably the major surface adjoining the anode region of the diodes is then irradiated with the radiation source to the determined radiation dosage. Preferably, the radiation dosage is between about 1 X 10 12 and 5 X 10 13 e/cm 2 , with electron radiation of intensity between 1 and 3 MeV

  20. 0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    International Nuclear Information System (INIS)

    MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

    2004-01-01

    Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm 2 multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm 2 respectively at operating at temperatures of T radiator = 950 C and T diode = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and ∼0.85 W/cm 2 could be attained under the above operating temperatures

  1. Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

    Science.gov (United States)

    Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

    2013-08-01

    Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

  2. Computer Processing Of Tunable-Diode-Laser Spectra

    Science.gov (United States)

    May, Randy D.

    1991-01-01

    Tunable-diode-laser spectrometer measuring transmission spectrum of gas operates under control of computer, which also processes measurement data. Measurements in three channels processed into spectra. Computer controls current supplied to tunable diode laser, stepping it through small increments of wavelength while processing spectral measurements at each step. Program includes library of routines for general manipulation and plotting of spectra, least-squares fitting of direct-transmission and harmonic-absorption spectra, and deconvolution for determination of laser linewidth and for removal of instrumental broadening of spectral lines.

  3. Temperature issues with white laser diodes, calculation and approach for new packages

    Science.gov (United States)

    Lachmayer, Roland; Kloppenburg, Gerolf; Stephan, Serge

    2015-01-01

    Bright white light sources are of significant importance for automotive front lighting systems. Today's upper class systems mainly use HID or LED light sources. As a further step laser diode based systems offer a high luminance, efficiency and allow the realization of new dynamic and adaptive light functions and styling concepts. The use of white laser diode systems in automotive applications is still limited to laboratories and prototypes even though announcements of laser based front lighting systems have been made. But the environment conditions for vehicles and other industry sectors differ from laboratory conditions. Therefor a model of the system's thermal behavior is set up. The power loss of a laser diode is transported as thermal flux from the junction layer to the diode's case and on to the environment. Therefor its optical power is limited by the maximum junction temperature (for blue diodes typically 125 - 150 °C), the environment temperature and the diode's packaging with its thermal resistances. In a car's headlamp the environment temperature can reach up to 80 °C. While the difference between allowed case temperature and environment temperature is getting small or negative the relevant heat flux also becomes small or negative. In early stages of LED development similar challenges had to be solved. Adapting LED packages to the conditions in a vehicle environment lead to today's efficient and bright headlights. In this paper the need to transfer these results to laser diodes is shown by calculating the diodes lifetimes based on the presented model.

  4. Organic light emitting diode with surface modification layer

    Science.gov (United States)

    Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.

    2017-09-12

    An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).

  5. Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

    KAUST Repository

    Khan, A.A.; Jayaswal, Gaurav; Gahaffar, F.A.; Shamim, Atif

    2017-01-01

    For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

  6. Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

    KAUST Repository

    Khan, A.A.

    2017-07-27

    For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

  7. Infrared diode laser spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Civiš, Svatopluk; Cihelka, Jaroslav; Matulková, Irena

    2010-01-01

    Roč. 18, č. 4 (2010), s. 408-420 ISSN 1230-3402 R&D Projects: GA AV ČR IAA400400705 Institutional research plan: CEZ:AV0Z40400503 Keywords : FTIR spectroscopy * absorption spectroscopy * laser diodes Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.027, year: 2010

  8. Non-Reciprocal Geometric Wave Diode by Engineering Asymmetric Shapes of Nonlinear Materials

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Jie [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Li, Nianbei [Tongji Univ., Shanghai Shi (China)

    2014-02-18

    Unidirectional nonreciprocal transport is at the heart of many fundamental problems and applications in both science and technology. Here we study how to design the novel wave diode devices to realize the non-reciprocal wave propagations. Analytical results reveal that such non-reciprocal wave propagation can be purely induced by asymmetric geometry in nonlinear materials. The detailed numerical simulations are performed for a more realistic geometric wave diode model with typical asymmetric shape, where good non-reciprocal wave diode effect has been demonstrated. The results open a way for making wave diodes efficiently simply through shape engineering.

  9. Performance enhancement of polymer Schottky diode by doping pentacene

    International Nuclear Information System (INIS)

    Kang, K.S.; Chen, Y.; Lim, H.K.; Cho, K.Y.; Han, K.J.; Kim, Jaehwan

    2009-01-01

    Schottky diodes have been fabricated using pentacene-doped poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) as a semiconducting material. To understand the fundamental properties of the pentacene-doped PEDOT:PSS, ultraviolet visible (UV) absorption spectroscopy was employed. It was found that a significant amount of pentacene can dissolve in n-methylpyrrolidone solvent. No characteristic absorption peak of pentacene was observed in the UV-visible spectra of PEDOT:PSS films doped with pentacene,. However, the absorption intensity of the doped PEDOT:PSS films increased as the pentacene concentration increased in particular in the UV region. The atomic force microscope images show that the surface roughnesses of PEDOT:PSS films increased as the pentacene concentration increased. Three-layer Schottky diodes comprising Al/PEDOT:PSS/Au or Al/PEDOT:PSS-pentacene/Au were fabricated. The maximum forward currents of non-doped and doped Schottky diodes were 4.8 and 440 μA/cm 2 at 3.3 MV/m, respectively. The forward current increased nearly two orders of magnitude for Schottky diode doped with 11.0 wt.% of pentacene.

  10. Gate Modulation of Graphene-ZnO Nanowire Schottky Diode.

    Science.gov (United States)

    Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

    2015-05-06

    Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping Vg towards the negative value, while decreases slowly towards the positive Vg. Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.

  11. Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

    International Nuclear Information System (INIS)

    Feng-Ping, Chen; Yu-Ming, Zhang; Hong-Liang, Lü; Yi-Men, Zhang; Jian-Hua, Huang

    2010-01-01

    This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Quench protection diodes for the large hadron collider LHC at CERN

    International Nuclear Information System (INIS)

    Hagedorn, D.; Naegele, W.

    1992-01-01

    For the quench protection of the main ring dipole and quadrupole magnets for the proposed Large Hadron Collider at CERN two lines of approach have been pursued for the realization of a suitable high current by-pass element and liquid helium temperature. Two commercially available diodes of the HERA type connected in parallel can easily meet the requirements if a sufficient good current sharing is imposed by current balancing elements. Design criteria for these current balancing elements are derived from individual diode characteristics. Single diode elements of thin base region, newly developed in industry, have been successfully tested. The results are promising and, if the diodes can be made with reproducible characteristics, they will provide the preferred solution especially in view of radiation hardness

  13. Integrated power conditioning for laser diode arrays

    International Nuclear Information System (INIS)

    Hanks, R.L.; Kirbie, H.C.; Newton, M.A.; Farhoud, M.S.

    1995-01-01

    This compact modulator has demonstated its ability to efficiently and accurately drive a laser diode array. The addition of the crowbar protection circuit is an invaluable addition to the integrated system and is capable of protecting the laser diode array against severe damage. We showed that the correlation between measured data and simulation indicates that our modulator model is valid and can be used as a tool in the design of future systems. The spectrometer measurements that we conducted underline the imprtance of current regulation to stable laser operation

  14. Operation of AC Adapters Visualized Using Light-Emitting Diodes

    Science.gov (United States)

    Regester, Jeffrey

    2016-01-01

    A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

  15. Junction depth dependence of breakdown in silicon detector diodes

    International Nuclear Information System (INIS)

    Beck, G.A.; Carter, A.A.; Carter, J.R.; Greenwood, N.M.; Lucas, A.D.; Munday, D.J.; Pritchard, T.W.; Robinson, D.; Wilburn, C.D.; Wyllie, K.

    1996-01-01

    The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction.We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage,in reasonable agreement with previous studies of junction breakdown. (orig.)

  16. Reliability of semiconductor and gas-filled diodes for over-voltage protection exposed to ionizing radiation

    Directory of Open Access Journals (Sweden)

    Stanković Koviljka

    2009-01-01

    Full Text Available The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.

  17. Resonant photopumping of a neon lasant plasma by a sodium pump plasma

    International Nuclear Information System (INIS)

    Young, F.C.; Apruzese, J.P.; Burkhalter, P.G.; Cooperstein, G.; Davis, J.; Mosher, D.; Ottinger, P.F.; Scherrer, V.E.; Stephanakis, S.J.; Mehlman, C.; Welch, B.L.

    1988-01-01

    Resonant photopumping of heliumlike neon by helium like sodium is being investigated to extend this pumping technique to the soft x-ray region. In the Na-pump/Ne-lasant system, the 1s 2 -1s2p 1 P 1 line of Na X at 11.0027 A differs by 2 parts in 10 4 from the 1s 2 -1s 4 p 1 P 1 line of Ne 1X at 11.0003 A. This wavelength difference corresponds to about one Doppler width at the sodium plasma temperatures (200-500 eV) required for strong Na X pump radiation. Sodium line radiation of sufficient power irradiating a properly prepared neon plasma will cause overpopulation of the Ne 1X n = 4 singlet level leading to lasing in the 4-3, 4-2, and possibly 3-2 singlet transitions. Experimentally, the current pulse from the NRL Gamble-II generator is used to produce side-by-side z-pinch plasmas of sodium fluoride (NaF) and neon. The discharges are viewed radially with x-ray diagnostics including time-integrated pinhole cameras, time-resolved x-ray diodes, and a time-integrated curved-crystal spectrograph. Measurements of the neon plasma indicate that a discharge current of about 200 kA is required to produce a neon lasant with a dominant heliumlike ground-state population. For fluorescence experiments, appropriate neon lasant conditions (density of about 10 18 cm -3 and temperature of 50-100 eV) must be produced at the time of the intense sodium pump-line radiation. Fluorescence is demonstrated by observing enhancement of the 4-1 line (He-γ) from the neon plasma relative to the 3-1 line (He-γ) when the neon is pumped by sodium. An increase in this γ-to-β ratio of 25% has been observed when the sodium pump radiation is present. The results of recent experiments are reported, and their implications for future experiments are discussed

  18. A study on the steady-state solutions of a relativistic Bursian diode in the presence of a transverse magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Pramanik, Sourav; Chakrabarti, Nikhil [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Kuznetsov, V. I.; Bakaleinikov, L. A. [Ioffe Institute, St. Petersburg 194021 (Russian Federation)

    2016-08-15

    A comprehensive study on the steady states of a planar vacuum diode driven by a cold relativistic electron beam in the presence of an external transverse magnetic field is presented. The regimes, where no electrons are turned around by the external magnetic field and where they are reflected back to the emitter by the magnetic field, are both considered in a generalized way. The problem is solved by two methods: with the Euler and the Lagrange formulation. Taking non-relativistic limit, the solutions are compared with the similar ones which were obtained for the Bursian diode with a non-relativistic electron beam in previous work [Pramanik et al., Phys. Plasmas 22, 112108 (2015)]. It is shown that, at a moderate value of the relativistic factor of the injected beam, the region of the ambiguous solutions located to the right of the SCL bifurcation point (space charge limit) in the non-relativistic regime disappears. In addition, the dependencies of the characteristic bifurcation points and the transmitted current on the Larmor frequency as well as on the relativistic factor are explored.

  19. Ion diode diagnostics to resolve beam quality issues

    Energy Technology Data Exchange (ETDEWEB)

    Bluhm, H; Buth, L; Hoppe, P [Forschungszentrum Karlsruhe (Germany). Institut fuer Neutronenphysik und Reaktortechnik; and others

    1997-12-31

    Various diagnostic methods and instruments are under development at the Forschungszentrum Karlsruhe to measure important physical quantities in the accelerating gap of high power diodes on KALIF with a high spatial and temporal resolution. The methods include optical spectroscopy, refractive index measurements, dispersion interferometry, and high resolution energy analysis. The setup of these diagnostic tools and the first results obtained for applied and self-magnetically insulated diodes are presented. (author). 6 figs., 5 refs.

  20. The All Boron Carbide Diode Neutron Detector: Experiment and Modeling Approach

    International Nuclear Information System (INIS)

    Sabirianov, Ildar F.; Brand, Jennifer I.; Fairchild, Robert W.

    2008-01-01

    Boron carbide diode detectors, fabricated from two different polytypes of semiconducting boron carbide, will detect neutrons in reasonable agreement with theoretical expectations. The performance of the all boron carbide neutron detector differs, as expected, from devices where a boron rich neutron capture layer is distinct from the diode charge collection region (i.e. a conversion layer solid state detector). Diodes were fabricated from natural abundance boron (20% 10 B and 80% 11 B.) directly on the metal substrates and metal contacts applied to the films as grown. The total boron depth was on the order of 2 microns. This is clearly not a conversion-layer configuration. The diodes were exposed to thermal neutrons generated from a paraffin moderated plutonium-beryllium source in moderated and un-moderated, as well as shielded and unshielded experimental configurations, where the expected energy peaks at at 2.31 MeV and 2.8 MeV were clearly observed, albeit with some incomplete charge collection typical of thinner diode structures. The results are compared with other boron based thin film detectors and literature models. (authors)

  1. Design and first plasma measurements of the ITER-ECE prototype radiometer

    Energy Technology Data Exchange (ETDEWEB)

    Austin, M. E.; Brookman, M. W.; Rowan, W. L. [Institute for Fusion Studies, University of Texas at Austin, Austin, Texas 78712 (United States); Danani, S. [ITER-India/Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Bryerton, E. W.; Dougherty, P. [Virginia Diodes, Inc., Charlottesville, Virginia 22902 (United States)

    2016-11-15

    On ITER, second harmonic optically thick electron cyclotron emission (ECE) in the range of 220-340 GHz will supply the electron temperature (T{sub e}). To investigate the requirements and capabilities prescribed for the ITER system, a prototype radiometer covering this frequency range has been developed by Virginia Diodes, Inc. The first plasma measurements with this instrument have been carried out on the DIII-D tokamak, with lab bench tests and measurements of third through fifth harmonic ECE from high T{sub e} plasmas. At DIII-D the instrument shares the transmission line of the Michelson interferometer and can simultaneously acquire data. Comparison of the ECE radiation temperature from the absolutely calibrated Michelson and the prototype receiver shows that the ITER radiometer provides accurate measurements of the millimeter radiation across the instrument band.

  2. Extraction of diode parameters of silicon solar cells under high illumination conditions

    International Nuclear Information System (INIS)

    Khan, Firoz; Baek, Seong-Ho; Park, Yiseul; Kim, Jae Hyun

    2013-01-01

    Graphical abstract: We have developed an analytical method to determine the diode parameters of concentrator solar cells under high illumination conditions. The determined values of diode parameters have been used to compute the theoretical values of performance parameters. The computed values of the open circuit voltage, curve factor, and efficiency obtained using diode parameters determined with this method showed good agreement (<2% discrepancy) with their experimental values in the temperature range 298–323 K. Highlights: • An analytical method to extract the diode parameters of concentrated Si solar cells. • This method uses single I–V curve under high illumination conditions. • The theoretical values of performance parameters have been computed. • Theoretical values of parameters matched within 2% discrepancy limit. • This method gives best results among the methods used in this work. - Abstract: An analytical method has been developed to extract all four diode parameters, namely the shunt resistance, series resistance, diode ideality factor, and reverse saturation current density, using a single J–V curve, based on one exponential model of silicon solar cells under high illumination conditions. The slope of the J–V curve (dV/dJ) at a short circuit condition is used to determine the value of the shunt resistance. The slope of the J–V curve at an open circuit condition together with the short circuit current density, open circuit voltage, current density, and voltage at maximum power point have been used to determine the values of the series resistance, diode ideality factor, and reverse saturation current density. The determined values of the diode parameters have been used to compute the theoretical values of the open circuit voltage, curve factor, and efficiency of the solar cell. The theoretical J–V curves matched well with the corresponding experimental curves. This method is applied to determine the diode parameters of concentrator

  3. Diode laser spectroscopy of oxygen electronic band at 760 nm

    International Nuclear Information System (INIS)

    Lucchesini, A.; De Rosa, M.; Gozzini, S.

    1998-01-01

    Collisional broadening and shift coefficients have been obtained by analyzing the line shapes of oxygen absorptions in the 760 nm electronic band. By using a diode laser spectrometer with commercially available etherostructure Al x Ga 1-x As diode lasers operating in 'free-running mode', line shape parameters have been collected at room temperature by varying the gas pressure. A systematic study has been carried on seven absorption lines by scanning the diode laser emission wavelength around the gas resonances. The weak absorption lines have been detected by using the wavelength modulation (WM) spectroscopy technique with second-harmonic detection

  4. Frequency-comb-assisted broadband precision spectroscopy with cascaded diode lasers

    DEFF Research Database (Denmark)

    Liu, Junqiu; Brasch, Victor; Pfeiffer, Martin H. P.

    2016-01-01

    Frequency-comb-assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this Letter, we present a novel method using cascaded frequency agile diode lasers......, which allows us to extend the measurement bandwidth to 37.4 THz (1355-1630 nm) at megahertz resolution with scanning speeds above 1 THz/s. It is demonstrated as a useful tool to characterize a broadband spectrum for molecular spectroscopy, and in particular it enables us to characterize the dispersion...

  5. Investigations of shot reproducibility for the SMP diode at 4.5 MV.

    Energy Technology Data Exchange (ETDEWEB)

    Bennett, Nichelle [National Security Technologies, LLC, Las Vegas, NV (United States); Crain, Marlon D. [National Security Technologies, LLC, Las Vegas, NV (United States); Droemer, Darryl W. [National Security Technologies, LLC, Las Vegas, NV (United States); Gignac, Raymond Edward [National Security Technologies, LLC, Las Vegas, NV (United States); Lare, Gregory A. [National Security Technologies, LLC, Las Vegas, NV (United States); Molina, Isidro [National Security Technologies, LLC, Las Vegas, NV (United States); Obregon, Rafael [National Security Technologies, LLC, Las Vegas, NV (United States); Smith, Chase C. [National Security Technologies, LLC, Las Vegas, NV (United States); Wilkins, Frank Lee [National Security Technologies, LLC, Las Vegas, NV (United States); Welch, Dale Robert [Voss Scientific, LLC, Albuquerque, NM (United States); Cordova, Steve Ray; Gallegos, M.; Johnston, Mark D.; Kiefer, Mark Linden; Leckbee, Joshua J.; Nielsen, Daniel Scott; Oliver, Bryan Velten; Renk, Timothy Jerome; Romero, Tobias; Webb, Timothy Jay; Ziska, Derek Raymond

    2013-11-01

    In experiments conducted on the RITS-6 accelerator, the SMP diode exhibits sig- ni cant shot-to-shot variability. Speci cally, for identical hardware operated at the same voltage, some shots exhibit a catastrophic drop in diode impedance. A study is underway to identify sources of shot-to-shot variations which correlate with diode impedance collapse. To remove knob emission as a source, only data from a shot series conducted with a 4.5-MV peak voltage are considered. The scope of this report is limited to sources of variability which occur away from the diode, such as power ow emission and trajectory changes, variations in pulsed power, dustbin and transmission line alignment, and di erent knob shapes. We nd no changes in the transmission line hardware, alignment, or hardware preparation methods which correlate with impedance collapse. However, in classifying good versus poor shots, we nd that there is not a continuous spectrum of diode impedance behavior but that the good and poor shots can be grouped into two distinct impedance pro les. This result forms the basis of a follow-on study focusing on the variability resulting from diode physics. 3

  6. Features of current-voltage characteristic of nonequilibrium trench MOS barrier Schottky diode

    Science.gov (United States)

    Mamedov, R. K.; Aslanova, A. R.

    2018-06-01

    The trench MOS barrier Schottky diodes (TMBS diode) under the influence of the voltage drop of the additional electric field (AEF) appearing in the near-contact region of the semiconductor are in a nonequilibrium state and their closed external circuit flows currents in the absence of an external voltage. When an external voltage is applied to the TMBS diode, the current transmission is described by the thermionic emission theory with a specific feature. Both forward and reverse I-V characteristics of the TMBS diode consist of two parts. In the initial first part of the forward I-V characteristic there are no forward currents, but reverse saturation currents flow, in its subsequent second part the currents increase exponentially with the voltage. In the initial first part of the reverse I-V characteristic, the currents increase in an abrupt way and in the subsequent second part the saturation currents flow under the action of the image force. The mathematical expressions for forward and reverse I-V characteristic of the TMBS diode and also narrow or nanostructure Schottky diode are proposed, which are in good agreement with the results of experimental and calculated I-V characteristics.

  7. Plasma theory and simulation. Third and fourth quarter progress report, July 1-December 31, 1984

    International Nuclear Information System (INIS)

    Birdsall, C.K.

    1984-01-01

    Several theoretical investigations are reported. These topics include: (1) oblique electron Bernstein waves; (2) the effect of large amplitude rf waves on the interchange instability; (3) one-beam Alfven ion-cyclotron instabilities of multibeam ion distribution; (4) linear mode coupling in simulations of the Alfven ion-cyclotron instability; (5) plasma-sheath region; (6) planar magnetron discharges; (7) low-alpha Pierce diode; and (8) ion-acoustic double layers. 8 refs., 37 figs

  8. Ultra-high brightness wavelength-stabilized kW-class fiber coupled diode laser

    Science.gov (United States)

    Huang, Robin K.; Chann, Bien; Glenn, John D.

    2011-03-01

    TeraDiode has produced a fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Further advances of these ultra-bright lasers are also projected.

  9. Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

    Science.gov (United States)

    Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

    2017-06-01

    N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

  10. Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

    Science.gov (United States)

    Navarro, Dondee; Herrera, Fernando; Zenitani, Hiroshi; Miura-Mattausch, Mitiko; Yorino, Naoto; Jürgen Mattausch, Hans; Takusagawa, Mamoru; Kobayashi, Jun; Hara, Masafumi

    2018-04-01

    A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS is accomplished by modeling the distributed resistance induced by the p+ implant developed for minimizing the leakage current at reverse bias. Only the geometrical features of the p+ implant are necessary to model the distributed resistance. Reproduction of 4H-SiC SBD and JBS current-voltage characteristics with the developed compact model are validated against two-dimensional (2D) device-simulation results as well as measurements at different temperatures.

  11. Efficient thermal diode with ballistic spacer

    Science.gov (United States)

    Chen, Shunda; Donadio, Davide; Benenti, Giuliano; Casati, Giulio

    2018-03-01

    Thermal rectification is of importance not only for fundamental physics, but also for potential applications in thermal manipulations and thermal management. However, thermal rectification effect usually decays rapidly with system size. Here, we show that a mass-graded system, with two diffusive leads separated by a ballistic spacer, can exhibit large thermal rectification effect, with the rectification factor independent of system size. The underlying mechanism is explained in terms of the effective size-independent thermal gradient and the match or mismatch of the phonon bands. We also show the robustness of the thermal diode upon variation of the model's parameters. Our finding suggests a promising way for designing realistic efficient thermal diodes.

  12. Non-laminar flow model for the impedance of a rod-pinch diode

    International Nuclear Information System (INIS)

    Ottinger, Paul F.; Schumer, Joseph W.; Strasburg, Sean D.; Swanekamp, Stephen B.; Oliver, Bryan V.

    2002-01-01

    A previous laminar flow model for the rod-pinch diode is extended to include a transverse pressure term to study the effects of non-laminar flow. The non-laminar nature of the flow has a significant impact on the diode impedance. Results show that the introduction of the transverse pressure decreases the diode impedance predicted by the model bringing it into better agreement with experimental data

  13. Performance measurements of hybrid PIN diode arrays

    International Nuclear Information System (INIS)

    Jernigan, J.G.; Arens, J.F.; Collins, T.; Herring, J.; Shapiro, S.L.; Wilburn, C.D.

    1990-05-01

    We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format having 10 x 64 pixels, each 120 μm square, and the other format having 256 x 256 pixels, each 30 μm square. In both cases, the thickness of the PIN diode layer is 300 μm. Measurements of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 13 figs

  14. Nearest-IR superluminescent diodes with a 100-nm spectral width

    Energy Technology Data Exchange (ETDEWEB)

    Il' chenko, S N; Ladugin, M A; Marmalyuk, Aleksandr A; Yakubovich, S D

    2012-11-30

    This paper presents an experimental study of quantum well superluminescent diodes with an extremely thin (InGa)As active layer. Under cw injection, the output power of such diodes is several milliwatts, with a centre wavelength of 830 nm and emission bandwidth of about 100 nm. (letters)

  15. Determination of QW laser diode degradation based on the emission spectrum

    Directory of Open Access Journals (Sweden)

    Bliznyuk Vladimir

    2017-01-01

    Full Text Available The possibility of laser diodes degradation control by monitoring of their spectrum is shown. For red and infra-red laser diodes, the time dependence of the radiation spectrum width was obtained.

  16. Diode-pumped Tm:YAP/YVO4 intracavity Raman laser

    International Nuclear Information System (INIS)

    Zhao, Jiaqun; Zhou, Xiaofeng; Wang, Guodong; Cheng, Ping; Xu, Feng

    2017-01-01

    The laser performance based on YVO 4 Raman conversion in a diode-pumped actively Q-switched Tm:YAP laser is demonstrated for the first time. With an incident diode power of 10.9 W and a pulse repetition rate of 1 kHz, the average output powers for the first Stokes laser at 2.4 μm is about 270 mW. (paper)

  17. Interference phenomenon determines the color in an organic light emitting diode

    Science.gov (United States)

    Granlund, Thomas; Pettersson, Leif A. A.; Anderson, Mats R.; Inganäs, Olle

    1997-06-01

    We report on electroluminescence from two-layer organic diodes made of poly(3-methyl-4-octylthiophene) and 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,2,4-oxadiazole films between electrodes of indium tin oxide and Ca/Al. The diodes emitted light in the green-blue range; the electroluminescence spectra varied between diodes with different thicknesses of the polymer and molecular layers. The optical phenomena were simulated with a model accounting for interference effects; simulated results showed that the electroluminescence from the organic diode can be due neither to luminescence of the polymer nor of the molecular layer. These model simulations, together with electrochemical measurements, can be interpreted as evidence for an indirect optical transition at the polymer/molecule interface that only occurs in a strong electric field. We label this transition an electroplex.

  18. Dosimetric validation of new semiconductor diode dosimetry system for intensity modulated radiotherapy

    Directory of Open Access Journals (Sweden)

    Rajesh Kinhikar

    2012-01-01

    Full Text Available Introduction: The new diode Isorad was validated for intensity modulated radiotherapy (IMRT and the observations during the validation are reported. Materials and Methods: The validation includes intrinsic precision, post-irradiation stability, dose linearity, dose-rate effect, angular response, source to surface (SSD dependence, field size dependence, and dose calibration. Results: The intrinsic precision of the diode was more than 1% (1 σ. The linearity found in the whole range of dose analyzed was 1.93% (R 2 = 1. The minimum and maximum variation in the measured and calculated dose were found to be 0.78% (with 25 MU at ioscentre and 4.8% (with 1000 MU at isocentre, respectively. The maximal variation in angular response with respect to arbitrary angle 0° found was 1.31%. The diode exhibited a 51.7% and 35% decrease in the response in the 35 cm and 20 cm SSD range, respectively. The minimum and the maximum variation in the measured dose from the diode and calculated dose were 0.82% (5 cm × 5 cm and 3.75% (30 cm × 30 cm, respectively. At couch 270°, the response of the diode was found to vary maximum by 1.4% with ΁ 60 gantry angle. Mean variation between measured dose with diode and planned dose by TPS was found to be 1.3% (SD 0.75 for IMRT patient-specific quality assurance. Conclusion: For the evaluation of IMRT, use of cylindrical diode is strongly recommended.

  19. Diode-laser-illuminated automotive lamp systems

    Science.gov (United States)

    Marinelli, Michael A.; Remillard, Jeffrey T.

    1998-05-01

    We have utilized the high brightness of state-of-the-art diode laser sources, and a variety of emerging optical technologies to develop a new class of thin, uniquely styled automotive brake and signal lamps. Using optics based on thin (5 mm) plastic sheets, these lamps provide appearance and functional advantages not attainable with traditional automotive lighting systems. The light is coupled into the sheets using a 1 mm diameter glass fiber, and manipulated using refraction and reflection from edges, surfaces, and shaped cut-outs. Light can be extracted with an efficiency of approximately 50% and formed into a luminance distribution that meets the Society of Automotive Engineers (SAE) photometric requirements. Prototype lamps using these optics have been constructed and are less than one inch in thickness. Thin lamps reduce sheet metal costs, complexity, material usage, weight, and allow for increased trunk volume. In addition, these optics enhance lamp design flexibility. When the lamps are not energized, they can appear body colored, and when lighted, the brightness distribution across the lamp can be uniform or structured. A diode laser based brake lamp consumes seven times less electrical power than one using an incandescent source and has instant on capability. Also, diode lasers have the potential to be 10-year/150,000 mile light sources.

  20. Organic light emitting diode with light extracting electrode

    Energy Technology Data Exchange (ETDEWEB)

    Bhandari, Abhinav; Buhay, Harry

    2017-04-18

    An organic light emitting diode (10) includes a substrate (20), a first electrode (12), an emissive active stack (14), and a second electrode (18). At least one of the first and second electrodes (12, 18) is a light extracting electrode (26) having a metallic layer (28). The metallic layer (28) includes light scattering features (29) on and/or in the metallic layer (28). The light extracting features (29) increase light extraction from the organic light emitting diode (10).