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Sample records for plasma diodes

  1. Stability theory of Knudsen plasma diodes

    Energy Technology Data Exchange (ETDEWEB)

    Kuznetsov, V. I., E-mail: victor.kuznetsov@mail.ioffe.ru; Ender, A. Ya. [Ioffe Institute, Russian Academy of Sciences (Russian Federation)

    2015-11-15

    A stability theory is developed for a plasma diode in which an electron beam supplied from the emitter propagates without collisions in the self-consistent electric field against the immobile ion background. An integral equation for the amplitude of the perturbed field is deduced using the Q,G method for the regime without electron reflection from a potential barrier. Analytic solutions to this equation are obtained for a number of important particular cases, and the plasma dispersion properties are examined.

  2. Plasma-filled diode based on the coaxial gun.

    Science.gov (United States)

    Zherlitsyn, A A; Kovalchuk, B M; Pedin, N N

    2012-10-01

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

  3. Plasma-filled diode based on the coaxial gun

    Energy Technology Data Exchange (ETDEWEB)

    Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N. [Institute of High Current Electronics, 2/3 Academichesky Avenue, 634055 Tomsk (Russian Federation)

    2012-10-15

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of {>=}1 MeV at the current of Almost-Equal-To 100 kA was obtained in the experiments with a plasma-filled diode. The energy of Almost-Equal-To 5 kJ with the peak power of {>=}100 GW dissipated in the diode.

  4. Plasma-filled diode based on the coaxial gun

    Science.gov (United States)

    Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N.

    2012-10-01

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

  5. Plasma opening switch studies of an applied Bz ion diode

    Science.gov (United States)

    Struckman, C. K.; Kusse, B. R.; Meyerhofer, D. D.; Rondeau, G.

    1989-05-01

    The light ion accelerator (1.5 MV, 4 ohms) at Cornell University is being used to study the characteristics of an applied Bz, or 'barrel', diode. The results of a series of experiments utilizing a plasma opening switch are reported. With a magnetically insulated ion diode load, the peak diode voltage increase from 1.5 to 1.8 MV and the ion power increased from 50 to 80 GW when a plasma opening switch was used.

  6. Plasma-filled applied B ion diode experiments using a plasma opening switch

    Science.gov (United States)

    Renk, T. J.

    1994-12-01

    In order for a plasma opening switch (POS) to open quickly and transfer power efficiently from an inductively charged vacuum transmission line to an applied B ion diode, the load impedance of the ion diode may be required to have an initial low impedance phase. A plasma-filled diode has such an impedance history. To test the effect of a plasma-filled diode on POS-diode coupling, a drifting plasma was introduced from the cathode side of an applied B ion diode operated on the LION accelerator (1.5 MV, 4 Ohm, 40 ns) at Cornell University. This plasma readily crossed the 2.1 T magnetic insulation field of the diode, and resulted in both increased diode electrical power, and an increased ability of the ion beam to remove material from a target. The plasma did not appear to have a noticeable effect on local beam steering angle.

  7. Characterisation of Plasma Filled Rod Pinch electron beam diode operation

    Science.gov (United States)

    MacDonald, James; Bland, Simon; Chittenden, Jeremy

    2016-10-01

    The plasma filled rod pinch diode (aka PFRP) offers a small radiographic spot size and a high brightness source. It operates in a very similar to plasma opening switches and dense plasma focus devices - with a plasma prefill, supplied via a number of simple coaxial plasma guns, being snowploughed along a thin rod cathode, before detaching at the end. The aim of this study is to model the PFRP and understand the factors that affect its performance, potentially improving future output. Given the dependence on the PFRP on the prefill, we are making detailed measurements of the density (1015-1018 cm-3), velocity, ionisation and temperature of the plasma emitted from a plasma gun/set of plasma guns. This will then be used to provide initial conditions to the Gorgon 3D MHD code, and the dynamics of the entire rod pinch process studied.

  8. Plasma formation in diode pumped alkali lasers sustained in Cs

    Science.gov (United States)

    Markosyan, Aram H.; Kushner, Mark J.

    2016-11-01

    In diode pumped alkali lasers (DPALs), lasing action occurs on the resonant lines of alkali atoms following pumping by broadband semiconductor lasers. The goal is to convert the efficient but usually poor optical quality of inexpensive diode lasers into the high optical quality of atomic vapor lasers. Resonant excitation of alkali vapor leads to plasma formation through the excitation transfer from the 2P states to upper lying states, which then are photoionized by the pump and intracavity radiation. A first principles global model was developed to investigate the operation of the He/Cs DPAL system and the consequences of plasma formation on the efficiency of the laser. Over a range of pump powers, cell temperatures, excitation frequency, and mole fraction of the collision mixing agent (N2 or C2H6), we found that sufficient plasma formation can occur that the Cs vapor is depleted. Although N2 is not a favored collisional mixing agent due to large rates of quenching of the 2P states, we found a range of pump parameters where laser oscillation may occur. The poor performance of N2 buffered systems may be explained in part by plasma formation. We found that during the operation of the DPAL system with N2 as the collisional mixing agent, plasma formation is in excess of 1014-1015 cm-3, which can degrade laser output intensity by both depletion of the neutral vapor and electron collisional mixing of the laser levels.

  9. Numerical studies of a plasma diode with external forcing

    Science.gov (United States)

    Rekaa, V. L.; Pécseli, H. L.; Trulsen, J. K.

    2012-08-01

    With reference to laboratory Q-machine studies we analyze the dynamics of a plasma diode under external forcing. Assuming a strong axial magnetic field, the problem is analyzed in one spatial dimension by a particle-in-cell code. The cathode is assumed to be operated in electron rich conditions, supplying an abundance of electrons. We compare different forcing schemes with the results obtained by solving the van der Pol equation. In one method of forcing we apply an oscillation in addition to the DC end plate bias and consider both amplitude and frequency variations. An alternative method of perturbation consists of modelling an absorbing grid at some internal position. Also in this case we can have a constant frequency with varying amplitude or alternatively an oscillation with chirped frequency but constant amplitude. We find that the overall features of the forced van der Pol equation are recovered, but the details in the plasma response need more attention to the harmonic responses, requiring extensions of the model equation. The analysis is extended by introducing collisional effects, where we emphasize charge exchange collisions of ions, since these processes usually have the largest cross sections and give significant modifications of the diode performance. In particular we find a reduction in oscillator frequency, although a linear scaling of the oscillation time with the system length remains also in this case.

  10. Interacting Eigenmodes of a plasma diode with a density gradient

    Energy Technology Data Exchange (ETDEWEB)

    Loefgren, T.; Gunell, H.

    1997-08-01

    The formation of narrow high frequency electric field spikes in plasma density gradients is investigated using one-dimensional particle in cell simulations. It is found that the shape of the plasma density gradient is very important for the spike formation. The spike appears also in simulations with immobile ions showing that a coupling to the ion motion, as for example in wave interactions, is not necessary for the formation of HF spikes. However, the HF spike influences the ion motion, and ion waves are seen in the simulations. It has been found, in experiments and simulations, that the electron velocity distribution function deviates from the Maxwellian distribution. Dispersion relations are calculated using realistic distribution functions. The spike can be seen as a coupled system of two Eigenmodes of a plasma diode fed by the beam-plasma interaction. Based on a simplified fluid description of such Eigenmodes, explanations for the localization of the spike, spatially and in frequency, are given. The density amplitude is comparable with the DC density level close to the cathode. Space charge limits of waves in this region seem to determine the amplitude of the spike through the Poisson`s equation. 12 refs, 19 figs.

  11. Plasma-Filled Rod-Pinch Diode for HEDLP Research

    Science.gov (United States)

    Richardson, Andrew; Weber, Bruce; Swanekamp, Stephen; Schumer, Joseph; Pereira, Nino; Seely, John; Mosher, David

    2016-10-01

    This poster describes recent progress on research into using the plasma-filled rod-pinch (PFRP) at the Naval Research Laboratory (NRL) for warm dense matter (WDM) studies. The objective of this project is to utilize the PFRP diode and associated diagnostics to experimentally quantify the pressure, temperature, and ionization state via independent measurements in WDM comprised of ionized high-Z materials (tungsten). Previous experiments and preliminary results show that the parameters of the PFRP plasma are approximately Z = 17 , ρm = 0.7 g/cm3, T = 30 eV, P = 16 Mb, and Γ = 35 . The experiments and simulations currently underway will allow for more accurate determination of these parameters, which will contribute to an enhanced understanding of these high-Z materials in a WDM state. To achieve this objective, new diagnostics are being developed and current diagnostics are being refined, experiments are being performed, and numerical modeling is being carried out. This project will refine a new technique for producing WDM that can be replicated on pulsed power generators at several US universities and government laboratories, provide data for benchmarking numerical analysis codes, and develop diagnostics that should prove useful on many other WDM sources. This work was supported under the Department of Energy Office of Science Project DE-SC0014331.

  12. Mechanism analysis of radiation generated by the beam-plasma interaction in a vacuum diode

    Science.gov (United States)

    Zengchao, Ji; Shixiu, Chen; Shen, Gao

    2017-01-01

    When we were studying the vacuum switch, we found that the vacuum diode can radiate a broadband microwave. The vacuum diode is comprised of a cathode with a trigger device and planar anode, there is not a metallic bellows waveguide structure in this device, so the radiation mechanism of the vacuum diode is different from the plasma filled microwave device. It is hard to completely imitate the theory of the plasma filled microwave device. This paper analyzes the breakdown process of the vacuum diode, establishes the mathematical model of the radiating microwave from the vacuum diode. Based on the analysis of the dispersion relation in the form of a refractive index, the electromagnetic waves generated in the vacuum diode will resonate. The included angle between the direction of the electromagnetic radiation and the initial motion direction of electron beam is 45 degrees. The paper isolates the electrostatic effect from the beam-plasma interaction when the electromagnetic radiation occurs. According to above analyses, the dispersion relations of radiation are obtained by solving the wave equation. The dispersion curves are also obtained based on the theoretical dispersion relations. The theoretical dispersion curves are consistent with the actual measurement time-frequency maps of the radiation. Theoretical deduction and experiments indicate that the reason for microwave radiating from the vacuum diode can be well explained by the interaction of the electron beam and magnetized plasma. Supported by National Nature Science Foundation of China (No. 11075123), the Young Scientists Fund of Nature Science Foundation of China (No. 51207171).

  13. Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit

    Science.gov (United States)

    Toftul, Alexandra; Polzin, Kurt A.; Martin, Adam K.; Hudgins, Jerry L.

    2014-01-01

    Testing of a 5.5 kV silicon (Si) diode and 5.8 kV prototype silicon carbide (SiC) diode in an inductive pulsed plasma thruster (IPPT) circuit was performed to obtain a comparison of the resulting circuit recapture efficiency,eta(sub r), defined as the percentage of the initial charge energy remaining on the capacitor bank after the diode interrupts the current. The diode was placed in a pulsed circuit in series with a silicon controlled rectifier (SCR) switch, and the voltages across different components and current waveforms were collected over a range of capacitor charge voltages. Reverse recovery parameters, including turn-off time and peak reverse recovery current, were measured and capacitor voltage waveforms were used to determine the recapture efficiency for each case. The Si fast recovery diode in the circuit was shown to yield a recapture efficiency of up to 20% for the conditions tested, while the SiC diode further increased recapture efficiency to nearly 30%. The data presented show that fast recovery diodes operate on a timescale that permits them to clamp the discharge quickly after the first half cycle, supporting the idea that diode-clamping in IPPT circuit reduces energy dissipation that occurs after the first half cycle

  14. Explosive-Emission Plasma Dynamics in Ion Diode in Double-Pulse Mode%Explosive-Emission Plasma Dynamics in Ion Diode in Double-Pulse Mode

    Institute of Scientific and Technical Information of China (English)

    Alexander I. PUSHKAREV; Yulia I. ISAKOVA

    2011-01-01

    The results of an experimental investigation of explosive-emission plasma dynamics in an ion diode with self-magnetic insulation are presented. The investigations were accomplished at the TEMP-4M accelerator set in a mode of double pulse formation. Plasma behaviour in the anode-cathode gap was analyzed according to both the current-voltage characteristics of the diode (time resolution of 0.5 ns) and thermal imprints on a target (spatial resolution of 0.8 mm). It was shown that when plasma formation at the potential electrode was complete, and up until the second (positive) pulse, the explosive-emission plasma expanded across the anode-cathode gap with a speed of 1.3±0.2 cm/μs. After the voltage polarity at the potential electrode was reversed (second pulse), the plasma erosion in the anode-cathode gap (similar to the effect of a plasma opening switch) occurred. During the generation of an ion beam the size of the anode-cathode gap spacing was determined by the thickness of the plasma layer on the potential electrode and the layer thickness of the electrons drifting along the grounded electrode.

  15. Monitoring Temperature in High Enthalpy Arc-heated Plasma Flows using Tunable Diode Laser Absorption Spectroscopy

    Science.gov (United States)

    Martin, Marcel Nations; Chang, Leyen S.; Jeffries, Jay B.; Hanson, Ronald K.; Nawaz, Anuscheh; Taunk, Jaswinder S.; Driver, David M.; Raiche, George

    2013-01-01

    A tunable diode laser sensor was designed for in situ monitoring of temperature in the arc heater of the NASA Ames IHF arcjet facility (60 MW). An external cavity diode laser was used to generate light at 777.2 nm and laser absorption used to monitor the population of electronically excited oxygen atoms in an air plasma flow. Under the assumption of thermochemical equilibrium, time-resolved temperature measurements were obtained on four lines-of-sight, which enabled evaluation of the temperature uniformity in the plasma column for different arcjet operating conditions.

  16. Characterization of plasma etching damage on p -type GaN using Schottky diodes

    OpenAIRE

    2008-01-01

    The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was ...

  17. Interface modification and material synthesis of organic light-emitting diodes using plasma technology

    Science.gov (United States)

    Liang, Rongqing; Ou, Qiongrong; Yang, Cheng; He, Kongduo; Yang, Xilu; Zhong, Shaofeng; plasma application Team

    2015-09-01

    Organic light-emitting diodes (OLEDs), due to their unique properties of solution processability, compatibility with flexible substrates and with large-scale printing technology, attract huge interest in the field of lighting. The integration of plasma technology into OLEDs provides a new route to improve their performance. Here we demonstrate the modification of indium-tin-oxide (ITO) work function by plasma treatment, synthesis of thermally activated delayed fluorescence (TADF) materials using plasma grafting (polymerisation), and multi-layer solution processing achieved by plasma cross-linking.

  18. The impact of plasma dynamics on the self-magnetic-pinch diode impedance

    Energy Technology Data Exchange (ETDEWEB)

    Bennett, Nichelle; Crain, M. Dale; Droemer, Darryl W.; Gignac, Raymond E.; Molina, Isidro; Obregon, Robert; Smith, Chase C.; Wilkins, Frank L. [National Security Technologies, LLC, Las Vegas, Nevada 89193 (United States); Welch, Dale R. [Voss Scientific, LLC, Albuquerque, New Mexico 87108 (United States); Webb, Timothy J.; Mazarakis, Michael G.; Kiefer, Mark L.; Johnston, Mark D.; Leckbee, Joshua J.; Nielsen, Dan; Romero, Tobias; Simpson, Sean; Ziska, Derek [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2015-03-15

    The self-magnetic-pinch diode is being developed as an intense electron beam source for pulsed-power-driven x-ray radiography. The basic operation of this diode has long been understood in the context of pinched diodes, including the dynamic effect that the diode impedance decreases during the pulse due to electrode plasma formation and expansion. Experiments being conducted at Sandia National Laboratories' RITS-6 accelerator are helping to characterize these plasmas using time-resolved and time-integrated camera systems in the x-ray and visible. These diagnostics are analyzed in conjunction with particle-in-cell simulations of anode plasma formation and evolution. The results confirm the long-standing theory of critical-current operation with the addition of a time-dependent anode-cathode gap length. The results may suggest that anomalous impedance collapse is driven by increased plasma radial drift, leading to larger-than-average ion v{sub r} × B{sub θ} acceleration into the gap.

  19. Explosive-Emission Plasma Dynamics in Ion Diode in Double-Pulse Mode

    Science.gov (United States)

    Alexander, I. Pushkarev; Yulia, I. Isakova

    2011-12-01

    The results of an experimental investigation of explosive-emission plasma dynamics in an ion diode with self-magnetic insulation are presented. The investigations were accomplished at the TEMP-4M accelerator set in a mode of double pulse formation. Plasma behaviour in the anode-cathode gap was analyzed according to both the current-voltage characteristics of the diode (time resolution of 0.5 ns) and thermal imprints on a target (spatial resolution of 0.8 mm). It was shown that when plasma formation at the potential electrode was complete, and up until the second (positive) pulse, the explosive-emission plasma expanded across the anode-cathode gap with a speed of 1.3±0.2 cm/μs. After the voltage polarity at the potential electrode was reversed (second pulse), the plasma erosion in the anode-cathode gap (similar to the effect of a plasma opening switch) occurred. During the generation of an ion beam the size of the anode-cathode gap spacing was determined by the thickness of the plasma layer on the potential electrode and the layer thickness of the electrons drifting along the grounded electrode.

  20. Investigation of mechanism of anode plasma formation in ion diode with dielectric anode

    Science.gov (United States)

    Pushkarev, A.

    2015-10-01

    The results of investigation of the anode plasma formation in a diode with a passive anode in magnetic insulation mode are presented. The experiments have been conducted using the BIPPAB-450 ion accelerator (350-400 kV, 6-8 kA, 80 ns) with a focusing conical diode with Br external magnetic field (a barrel diode). For analysis of plasma formation at the anode and the distribution of the ions beam energy density, infrared imaging diagnostics (spatial resolution of 1-2 mm) is used. For analysis of the ion beam composition, time-of-flight diagnostics (temporal resolution of 1 ns) were used. Our studies have shown that when the magnetic induction in the A-C gap is much larger than the critical value, the ion beam energy density is close to the one-dimensional Child-Langmuir limit on the entire working surface of the diode. Formation of anode plasma takes place only by the flashover of the dielectric anode surface. In this mode, the ion beam consists primarily of singly ionized carbon ions, and the delay of the start of formation of the anode plasma is 10-15 ns. By reducing the magnetic induction in the A-C gap to a value close to the critical one, the ion beam energy density is 3-6 times higher than that calculated by the one-dimensional Child-Langmuir limit, but the energy density of the ion beam is non-uniform in cross-section. In this mode, the anode plasma formation occurs due to ionization of the anode material with accelerated electrons. In this mode, also, the delay in the start of the formation of the anode plasma is much smaller and the degree of ionization of carbon ions is higher. In all modes occurred effective suppression of the electronic component of the total current, and the diode impedance was 20-30 times higher than the values calculated for the mode without magnetic insulation of the electrons. The divergence of the ion beam was 4.5°-6°.

  1. Solution processed organic light-emitting diodes using the plasma cross-linking technology

    Science.gov (United States)

    He, Kongduo; Liu, Yang; Gong, Junyi; Zeng, Pan; Kong, Xun; Yang, Xilu; Yang, Cheng; Yu, Yan; Liang, Rongqing; Ou, Qiongrong

    2016-09-01

    Solution processed multilayer organic light-emitting diodes (OLEDs) present challenges, especially regarding dissolution of the first layer during deposition of a second layer. In this work, we first demonstrated a plasma cross-linking technology to produce a solution processed OLED. The surfaces of organic films can be cross-linked after mixed acetylene and Ar plasma treatment for several tens of seconds and resist corrosion of organic solvent. The film thickness and surface morphology of emissive layers (EMLs) with plasma treatment and subsequently spin-rinsed with chlorobenzene are nearly unchanged. The solution processed triple-layer OLED is successfully fabricated and the current efficiency increases 50% than that of the double-layer OLED. Fluorescent characteristics of EMLs are also observed to investigate factors influencing the efficiency of the triple-layer OLED. Plasma cross-linking technology may open up a new pathway towards fabrication of all-solution processed multilayer OLEDs and other soft electronic devices.

  2. Small-size plasma diode with a transparent internal cathode for neutron generation

    Science.gov (United States)

    Shikanov, A. E.; Vovchenko, E. D.; Kozlovskii, K. I.; Shatokhin, V. L.

    2015-01-01

    A discharge plasma system for neutron generation based on the concept of inertial electrostatic confinement is considered. The system is made in the form of a gas-filled (1-60 Pa) diode with a composite hollow cathode placed at its center symmetrically to an embracing hollow cylindrical anode. Preionization of the discharge gap and an original design of the electrode system with a transparent central part make it possible to initiate a pulse high-voltage (100-150 kV) volume discharge in the ion oscillation mode. Estimates of the neutron emission in such a deuterium-filled diode show the feasibility of generating a pulse with a neutron yield on the order of 105 in the reaction D( d, n)3He, which is confirmed in experiments with an optimized geometry of the electrodes.

  3. Plasma Formation During Operation of a Diode Pumped Alkali Laser (DPAL) in Cs

    Science.gov (United States)

    Babaeva, Natalia Yu.; Zatsarinny, Oleg; Bartschat, Klaus; Kushner, Mark J.

    2014-10-01

    Diode pumped Alkali Lasers (DPALs) produce laser action on the resonant lines of alkali atoms. Diode lasers resonantly pump the 2P3/2 state of the alkali atom which is collisionally relaxed to the 2P3/2 state which then lases to the ground state 2S1/2. The low optical quality of high power semiconductor diode lasers is converted into high optical quality laser radiation from the alkali vapor. The Cs DPAL system using Ar/Cs/C2H6 mixtures has shown promising results. (C2H6 is the collisional relaxant.) In other studies, resonant excitation of alkali vapor by low power lasers has been used to produce highly ionized channels, initiated through associative ionization and superelastic electron heating. The issue then arises if plasma formation occurs during DPAL by similar mechanisms which would be detrimental to laser performance. In this paper, we report on results from a computational study of a DPAL using Cs vapor. The global model addresses quasi-cw pumping of the Cs(2P3/2) state by laser diodes, and includes a full accounting of the resulting electron kinetics. To enable this study, the B-spline R-matrix (BSR) with pseudostates method was employed to calculate electron impact cross sections for Cs. We found that for pump rates of many to 10 kW/cm2, plasma densities approaching 1013 cm-3 occur during laser oscillation with higher values in the absence of laser oscillation. Supported by DoD High Energy Laser Mult. Res. Initiative and NSF.

  4. Thin-layer chromatography combined with diode laser thermal vaporization inductively coupled plasma mass spectrometry.

    Science.gov (United States)

    Bednařík, Antonín; Tomalová, Iva; Kanický, Viktor; Preisler, Jan

    2014-10-17

    Here we present a novel coupling of thin-layer chromatography (TLC) to diode laser thermal vaporization inductively coupled plasma mass spectrometry (DLTV ICP MS). DLTV is a new technique of aerosol generation which uses a diode laser to induce pyrolysis of a substrate. In this case the cellulose stationary phase on aluminum-backed TLC sheets overprinted with black ink to absorb laser light. The experimental arrangement relies on economic instrumentation: an 808-nm 1.2-W continuous-wave infrared diode laser attached to a syringe pump serving as the movable stage. Using a glass tubular cell, the entire length of a TLC separation channel is scanned. The 8-cm long lanes were scanned in ∼35 s. The TLC - DLTV ICP MS coupling is demonstrated on the separation of four cobalamins (hydroxo-; adenosyl-; cyano-; and methylcobalamin) with limits of detection ∼2 pg and repeatability ∼15% for each individual species. Copyright © 2014 Elsevier B.V. All rights reserved.

  5. Application of mid-infrared tuneable diode laser absorption spectroscopy to plasma diagnostics: a review

    Energy Technology Data Exchange (ETDEWEB)

    Roepcke, J [INP-Greifswald, 17489 Greifswald, Friedrich-Ludwig-Jahn-Str. 19 (Germany); Lombardi, G [CNRS LIMHP, Universite Paris XIII, 99, av. J.B. Clement, 93430 Villetaneuse (France); Rousseau, A [Laboratoire de Physique et Technologie des Plasmas, Ecole Polytechnique, CNRS, 91128 Palaiseau (France); Davies, P B [Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW (United Kingdom)

    2006-11-01

    Within the last decade mid-infrared absorption spectroscopy over a region from 3 to 17{mu}m and based on tuneable lead salt diode lasers, often called tuneable diode laser absorption spectroscopy or TDLAS, has progressed considerably as a powerful diagnostic technique for in situ studies of the fundamental physics and chemistry in molecular plasmas. The increasing interest in processing plasmas containing hydrocarbons, fluorocarbons, organo-silicon and boron compounds has led to further applications of TDLAS because most of these compounds and their decomposition products are infrared active. TDLAS provides a means of determining the absolute concentrations of the ground states of stable and transient molecular species, which is of particular importance for the investigation of reaction kinetic phenomena. Information about gas temperature and population densities can also be derived from TDLAS measurements. A variety of free radicals and molecular ions have been detected by TDLAS. Since plasmas with molecular feed gases are used in many applications such as thin film deposition, semiconductor processing, surface activation and cleaning, and materials and waste treatment, this has stimulated the adaptation of infrared spectroscopic techniques to industrial requirements. The recent development of quantum cascade lasers (QCLs) offers an attractive new option for the monitoring and control of industrial plasma processes. The aim of the present paper is threefold: (i) to review recent achievements in our understanding of molecular phenomena in plasmas (ii) to report on selected studies of the spectroscopic properties and kinetic behaviour of radicals and (iii) to describe the current status of advanced instrumentation for TDLAS in the mid-infrared.

  6. Electric and Magnetic Field Measurements in High Energy Electron Beam Diode Plasmas using Optical Spectroscopy

    Science.gov (United States)

    Johnston, Mark; Patel, Sonal; Kiefer, Mark; Biswas, S.; Doron, R.; Stambulchik, E.; Bernshtam, V.; Maron, Yitzhak

    2016-10-01

    The RITS accelerator (5-11MV, 100-200kA) at Sandia National Laboratories is being used to evaluate the Self-Magnetic Pinch (SMP) diode as a potential flash x-ray radiography source. This diode consists of a small, hollowed metal cathode and a planar, high atomic mass anode, with a small vacuum gap of approximately one centimeter. The electron beam is focused, due to its self-field, to a few millimeters at the target, generating bremsstrahlung x-rays. During this process, plasmas form on the electrode surfaces and propagate into the vacuum gap, with a velocity of a 1-10 cm's/microseconds. These plasmas are measured spectroscopically using a Czerny-Turner spectrometer with a gated, ICCD detector, and input optical fiber array. Local magnetic and electric fields of several Tesla and several MV/cm were measured through Zeeman splitting and Stark shifting of spectral lines. Specific transitions susceptible to quantum magnetic and electric field effects were utilized through the application of dopants. Data was analyzed using detailed, time-dependent, collisional-radiative (CR) and radiation transport modeling. Recent results will be presented. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  7. Extraction of high-intensity ion beams from a laser plasma by a pulsed spherical diode

    Directory of Open Access Journals (Sweden)

    Yoshiyuki Oguri

    2005-06-01

    Full Text Available High-current Cu^{+} ion beams were extracted from a laser-produced plasma using a pulsed high-voltage multiaperture diode driven by an induction cavity. The amplitude and the duration of the extraction voltage were 130 kV and 450 ns, respectively. During the extraction, explosive beam divergence due to the strong space-charge force was suppressed by the focusing action of the gap between concentric hemispheres. Modulation of the extracted beam flux due to the plasma prefill in the gap has been eliminated by using a biased control grid put on the anode holes. By means of this extraction scheme we obtained a rectangular beam pulse with a rise time as short as ≈100  ns. The beam current behind the cathode was limited to ≈0.1   A, owing to space-charge effects, as well as to poor geometrical transmission through the cathode sphere. From the measurement of the extracted beam current density distribution along the beam axis and the beam profile measurement, we found a beam waist slightly downstream of the spherical center of the diode structure. The measured beam behavior was consistent with numerical results obtained via a 3D particle code. No serious degradation of the beam emittance was observed for the grid-controlled extraction scheme.

  8. High Energy-Density Plasma Dynamics in Plasma-Filled Rod-Pinch Diodes

    Science.gov (United States)

    2013-06-01

    at about 30 eV at the time of maximum energy density, and that the time-averaged ionization is about +17, similar to MHD model predictions [2... MHD model predictions [2]. The plasma mass distribution is inferred from x-ray distribution measurements. The time-dependent mass distribution is used...Previous modeling [2] assumed the tungsten plasma had a time-dependent Gaussian radial profile and a fixed length of 3.5 mm, consistent with time

  9. Time-resolved tunable diode laser absorption spectroscopy of pulsed plasma.

    Science.gov (United States)

    Adámek, P; Olejníček, J; Čada, M; Kment, Š; Hubička, Z

    2013-07-15

    A method for time-resolved tunable diode laser absorption spectroscopy (LAS) has been developed. In this Letter, we describe in detail a developed electronic module that controls the time resolution of the LAS system. The transistor-transistor logic signal triggering the plasma pulse is used for generation of two signals: the first one triggers fine tuning of the laser wavelength and the second one controls time-defined signal sampling from the absorption detector. The described method and electronic system enable investigation of the temporal evolution of the density and temperature of selected particles in technological plasma systems. The high-power impulse magnetron sputtering system with a period of 10 ms and a duty cycle of 1% has been used to verify this method. The temporal evolution of argon metastable density was measured in the active part of the pulse and in the afterglow. The resulting density of Ar* displays a double-peak structure with a first peak in the plasma "ON" phase and a second peak in the afterglow approximately 1 ms after the end of the pulse.

  10. Investigation of neutral and ion dynamics in a HiPIMS plasma by tunable laser diode absorption spectroscopy (TDLAS)

    Science.gov (United States)

    Preissing, Patrick; Hecimovic, Ante; von Keudell, Achim

    2016-09-01

    High power impulse magnetron sputtering (HiPIMS) discharges are known for complex plasma interactions, and complex temporal and spatial dynamics. Spatial and temporal dynamic of argon metastable (Arm), Ti atom (Ti0) and Ti ion (Ti+) density and temperature is studied by an extended tunable diode laser absorption spectroscopy setup (TDLAS) during a HiPIMS pulse. The TDLAS setup used a beam expander in combination with a 6 photo diode array to simultaneously measure spatial (resolution 5 mm) and time resolved absorption profiles of an Arm, Ti0 and Ti+ transition. This in combination with moving the magnetron in axial direction gives a complete 2D map of the density evolution. Temporal resolution of 400 ns was achieved by recording the photo diode signal on the National Instruments card. Final results allowed to investigate temporal evolution of the observed species in the volume between the target and the substrate.

  11. Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Skierbiszewski, C.; Turski, H.; Muziol, G.; Siekacz, M.; Sawicka, M.; Cywiński, G.; Wasilewski, Z. R.; Porowski, S.

    2014-02-01

    The progress in the growth of nitride-based laser diodes (LDs) made by plasma-assisted molecular beam epitaxy (PAMBE) is reviewed. In this work we describe the GaN and InGaN growth peculiarities, p-type doping efficiency, and the properties of InGaN quantum wells (QWs) grown by PAMBE. We demonstrate continuous wave (cw) LDs operating in the range from 410 to 482 nm. These LDs were grown on low dislocation (0 0 0 1) c-plane bulk GaN substrate, which allow one to fabricate cw LDs with a lifetime exceeding 2000 h. Also, the ultraviolet LDs at 388 nm grown on (2 0 -2 1) semipolar substrates are discussed. The use of high active nitrogen fluxes up to 2 µm/h during the InGaN growth was essential for pushing the lasing wavelengths of PAMBE LDs above 460 nm. Recent advancement of InGaN growth by PAMBE allows one to demonstrate high-quality quantum QWs and excellent morphology for thick layers. We discuss the influence of LDs design on their parameters such as lasing threshold current and laser beam quality.

  12. Effects of Plasma Formation on the Cesium Diode (DPAL) and Excimer (XPAL) Pumped Alkali Laser

    Science.gov (United States)

    Markosyan, Aram H.; Kushner, Mark J.

    2015-09-01

    Diode pumped alkali lasers (DPALs) and excimer pumped alkali lasers (XPALs) are being investigated as a means to convert optical pumps having poor optical quality to laser radiation having high optical quality. DPALs sustained in Cs vapor are pumped on the D2(852.35 nm), Cs(62S1/2) --> Cs(62P3/2) , transition and lase on the D1(894.59 nm) transition, Cs(62P1/2) --> Cs(62S1/2) . Collisional mixing (spin orbit relaxation) of the Cs(62P3/2) and Cs(62P1/2) levels is a key part of this three-level (in fact, a quasi-two-level) laser scheme. In the five-level XPAL pumping scheme, the CsAr(B2Σ1/ 2 +) state is optically pumped by 836.7 nm pulses, which later dissociates and produces Cs(62P3/2) . As in DPAL, a collisional relaxant transfers the population of Cs(62P3/2) to Cs(62P1/2) , which enables lasing on D1 transition. A first principals global computer model has been developed for both systems to investigate the effects of plasma formation on the laser performance. Argon is used as a buffer gas and nitrogen or ethane are used as a collisional relaxant at total pressure of 600 Torr at temperatures of 350-450 K, which produces vapor pressures of Cs of systems, a plasma formation in excess of 1014 - 1016cm-3 occurs, which potentially reduces laser output power by electron collisional mixing of upper and lower laser levels. Work supported by DoD High Energy Laser Multidisc, Res. Initiative.

  13. Studies of AN Extractor Geometry Magnetically Insulated Ion Diode with AN Exploding Metal Film Anode Plasma Source.

    Science.gov (United States)

    Rondeau, Gary D.

    Magnetically insulated diodes (MIDs) are of interest as ion sources for inertial confinement fusion. We examine several issues that are of concern with MIDs, including ion turn-on delay and anode plasma production, and diode impedance history and particle current scaling with the applied magnetic field and gap spacing. The LION pulsed power generator (1.5 MV, 4 Omega, 40 ns pulse length) was used to power an extractor geometry magnetically insulated (radial magnetic field) ion beam diode. The diode was studied with three anode configurations. In the first, with epoxy-filled-groove (epoxy) anodes, scaling of the ion and electron currents with the gap and the magnetic field was examined. We found that the observed ion current is consistent with a diode model that has been successful with barrel geometry MIDs. The electron leakage current scaled proportionally to 1/Bd^2, where d is the anode-cathode gap spacing and B is the magnetic field strength. Studies of ion beam propagation in vacuum showed that space charge non -neutrality near the magnetic field coils caused the beam to expand initially. Later in the ion pulse (20 to 30 ns), the beam expansion became much less severe. The second anode configuration utilized an "electron collector" protruding above an epoxy anode surface. With the collector, we observed less bremsstrahlung across the active anode region. From the damage to thin wires inserted into the anode and from the level of the ion current, we inferred that the electron layer was 1-2 mm further from the anode on collector shots. The last anode configuration studied was the exploding metal film active anode plasma source (EMFAAPS). Current from the accelerator was directed by an electron collector or a plasma opening switch through a thin aluminum film, which exploded to form the anode plasma. The primary ion species from EMFAAPS were protons, Al^{3+ } and Al^{2+}, although oxygen discharge cleaning reduced the proton fraction in favor of O^{3+}, O ^{2+}, C

  14. Experimental studies of a microsecond plasma opening switch in the positive polarity regime with inductive load/extraction ion diode

    Science.gov (United States)

    Bystritskii, V. M.; Lisitsyn, I. V.; Sinebryukhov, V. A.; Volkov, S. N.; Krasik, Ya. E.

    1992-06-01

    Systematic studies of the microsecond plasma opening switch (MPOS) operation in the positive polarity of its inner electrode with an inductive load/B-applied ion diode of the extraction type at a level of 0.3 TW of dissipated power were performed at the DOUBLE generator (300 kA, 480 kV, 1 μs). The detailed measurements of ion flow parameters in the conductive phase of the MPOS showed the considerable enhancement of the ion current amplitude over the thermal flow limit (3-10 times) which is coupled with a significant decrease of electron conductivity in the MPOS across its self-magnetic field. The positive polarity MPOS operation proved to be more critical to the stored current amplitudes and geometry of the electrodes in comparison with the negative polarity case. This fact resulted in limitations of satisfactory performance of the MPOS involving short high-voltage pulse duration, low stored current amplitudes, and a narrow region of acceptable electrode diameters. The variation of the diode anode-cathode (AC) gap provided a sensitive control of the MPOS + magnetically insulated diode (MID) system, which displayed very strong coupling, resulting in clamping of the output voltage in a wide region of diode impedances. The early long-duration (<300 ns) high-voltage (50-200 kV) prepulse improves plasma production at the anode of the MID prior to the application of the main pulse. The optimal performance of the MPOS+MID system was realized at the level of ZMPOS/ZMID = 2.5. The energy of the extracted high-power ion beam made up 3.5 kJ, its power being 120 GW with 40% efficiency of energy transfer from MPOS to the MID.

  15. Time-independent states of a non-neutral plasma diode when emitted electrons are partially turned around by a transverse magnetic field

    Science.gov (United States)

    Pramanik, Sourav; Kuznetsov, V. I.; Gerasimenko, A. B.; Chakrabarti, Nikhil

    2016-10-01

    An analytical study is presented on the steady states of a plasma diode that is uniformly occupied by infinitely massive ions of constant density and driven by a cold electron beam in the presence of an external transverse magnetic field. In contrast to our previous work [Pramanik et al., Phys. Plasmas 23, 062118 (2016)], here, we investigate the case when electrons are reflected back to the emitter by the magnetic field for arbitrary values of the neutralization parameter. Using the emitter electric field as a characteristic parameter, the steady-state solutions have been evaluated for the specific values of the diode gap, applied voltage, neutralization parameter, and magnetic field strength. It was found that unlike vacuum diodes (e.g., the Bursian diode), steady state solutions also exist for negative values of the emitter field strength. In case of the Bursian diode, only a single type of solutions (Bursian branches) was observed. However, for the Pierce diode, the new family of solutions appeared along with the Bursian ones. In the absence of the external magnetic field as well as when it is weak, the potential distribution shows a wavy nature. However, when the Larmor radius was ten times the beam Debye length, the wavy potential profile and non-Bursian branches disappeared. Based on this phenomenon, a non-neutral diode can be used to operate fast electronic switches.

  16. Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (2021) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sawicka, M.; Grzanka, S.; Skierbiszewski, C. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland); TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw (Poland); Cheze, C. [TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw (Poland); Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Turski, H.; Muziol, G.; Krysko, M.; Grzanka, E.; Sochacki, T. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland); Hauswald, C.; Brandt, O. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Siekacz, M. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland); Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Kucharski, R. [Ammono S.A., Czerwonego Krzyza 2/31, 00-377 Warsaw (Poland); Remmele, T.; Albrecht, M. [Leibniz Institute for Crystal Growth, Max-Born Strasse 2, Berlin 12489 (Germany)

    2013-03-18

    Multi-quantum well (MQW) structures and light emitting diodes (LEDs) were grown on semipolar (2021) and polar (0001) GaN substrates by plasma-assisted molecular beam epitaxy. The In incorporation efficiency was found to be significantly lower for the semipolar plane as compared to the polar one. The semipolar MQWs exhibit a smooth surface morphology, abrupt interfaces, and a high photoluminescence intensity. The electroluminescence of semipolar (2021) and polar (0001) LEDs fabricated in the same growth run peaks at 387 and 462 nm, respectively. Semipolar LEDs with additional (Al,Ga)N cladding layers exhibit a higher optical output power but simultaneously a higher turn-on voltage.

  17. GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Tseng, H. Y.; Yang, W. C.; Lee, P. Y.; Lin, C. W.; Cheng, Kai-Yuan; Hsieh, K. C.; Cheng, K. Y.; Hsu, C.-H.

    2016-08-01

    GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.

  18. InGaN light emitting diodes for 415 nm-520 nm spectral range by plasma assisted MBE

    Energy Technology Data Exchange (ETDEWEB)

    Szankowska, M.L.; Smalc-Koziorowska, J.; Cywinski, G.; Grzanka, S.; Grzegory, I.; Lucznik, B. [Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa (Poland); Feduniewicz-Zmuda, A. [TopGaN Ltd, ul Sokolowska 29/37, 01-142 Warszawa (Poland); Wasilewski, Z.R. [Institute for Microstructural Sciences, National Research Council, Ottawa (Canada); Porowski, S.; Skierbiszewski, C. [Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warszawa (Poland); TopGaN Ltd, ul Sokolowska 29/37, 01-142 Warszawa (Poland); Siekacz, M

    2009-06-15

    In this work we study the growth of the Light Emitting Diodes (LEDs) by Plasma Assisted MBE (PAMBE). The active LEDs region was grown to cover the spectral range spanning from 415 nm to 520 nm. We demonstrate efficient LEDs with the highest optical power output of 1.5 mW and 20 mA for 415 nm. For longer wavelengths we observe a drop of the optical power. The reduction of the quantum efficiency for green emission can be related to the presence of strong built-in piezoelectric fields or increased number of nonradiative recombination centers. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Determination of metformin in mouse, rat, dog and human plasma samples by laser diode thermal desorption/atmospheric pressure chemical ionization tandem mass spectrometry.

    Science.gov (United States)

    Swales, John G; Gallagher, Richard; Peter, Raimund M

    2010-11-02

    A simple, rapid and robust high-throughput assay for the quantitative analysis of metformin in plasma from different species using laser diode thermal desorption interfaced with atmospheric chemical pressure ionization tandem mass spectrometry (LDTD-APCI-MSMS) was developed for use in a pharmaceutical discovery environment. In order to minimize sample preparation a generic protein precipitation method was used to extract metformin from the plasma. Laser diode thermal desorption is a relatively new sample introduction method, the optimization of the instrumental parameters are presented. The method was successfully applied to spiked mouse, rat, dog and human plasma samples and was subsequently used to determine the oral pharmacokinetics of metformin after dosing to male rats in order to support drug discovery projects. The deviations for intra-assay accuracy and precision across the four species were less than 30% at all calibration and quality control levels.

  20. Diagnosis of high-intensity pulsed heavy ion beam generated by a novel magnetically insulated diode with gas puff plasma gun.

    Science.gov (United States)

    Ito, H; Miyake, H; Masugata, K

    2008-10-01

    Intense pulsed heavy ion beam is expected to be applied to materials processing including surface modification and ion implantation. For those applications, it is very important to generate high-purity ion beams with various ion species. For this purpose, we have developed a new type of a magnetically insulated ion diode with an active ion source of a gas puff plasma gun. When the ion diode was operated at a diode voltage of about 190 kV, a diode current of about 15 kA, and a pulse duration of about 100 ns, the ion beam with an ion current density of 54 A/cm(2) was obtained at 50 mm downstream from the anode. By evaluating the ion species and the energy spectrum of the ion beam via a Thomson parabola spectrometer, it was confirmed that the ion beam consists of nitrogen ions (N(+) and N(2+)) of energy of 100-400 keV and the proton impurities of energy of 90-200 keV. The purity of the beam was evaluated to be 94%. The high-purity pulsed nitrogen ion beam was successfully obtained by the developed ion diode system.

  1. Electron Temperature Measurement Using PIN Diodes as Detectors to Record the X-ray Pulses from a Low-Energy Mather-Type Plasma Focus

    Institute of Scientific and Technical Information of China (English)

    M. Asif; Amna Ikram

    2004-01-01

    In the experiment to determine the plasma electron temperature, a modified multichannel PIN diodes assembly is used as detectors to record the X-ray pulses from a low-energy Mather-type plasma focus device energized by a 32μF, 15 kV (3.6 k J) single capacitor, with deuterium as a filling gas. The ratio of the integrated bremsstrahlung emission transmitting through foils to the total incident flux as a function of foil thickness at various temperatures is obtained for foil absorbers of material. Using 3μm, 6μm, 9μm,12μm,15μm and 18μm thick aluminium absorbers, the transmitted X-ray flux is detected. By comparing the experimental and theoretical curves through a computer program, the plasma electron temperature is determined. Results show that the deuterium focus plasma electron temperature is about 800 eV.

  2. 固态等离子体S-PIN二极管仿真设计%Simulation of Solid State Plasma S-PIN Diode

    Institute of Scientific and Technical Information of China (English)

    李威; 曾繁辉; 张彤

    2014-01-01

    Simulation S-PIN diodes is set up based on semiconductor theory, in order to get the carrier concentration,mobility ratio and optimized structure of diode,in which carrier concentration induced by forward bias on the surface of diodes reaches 1018 cm-3 . This high carrier concentration phenomenon so called solid state plasma phenomena,results in metal-like features of S-PIN diodes. Then the S-PIN diodes array is simulated,in order to confirm metal-like area,which can be used in RF antenna instead of metal.%介绍固态等离子体器件S-PIN二极管的仿真。在半导体理论的基础上建立S-PIN二极管的物理模型,利用软件对S-PIN二极管结构进行仿真计算,研究固态等离子体载流子浓度、载流子迁移率等参数性质,计算出二极管导通状态下的电导率。对二极管结构进行优化设计,使二极管导通情况下载流子浓度能够达到1018 cm-3,导电性能类似金属。这种高密度载流子聚集的现象被称为固态等离子体现象。仿真设计并排级联的S-PIN二极管阵列,得到类似金属导电性的连续固态等离子体区域,能够取代金属材料制备射频微波天线。

  3. Optical diagnosis system for intense electron beam diode plasma%强流电子束二极管等离子体光学诊断

    Institute of Scientific and Technical Information of China (English)

    杨杰; 舒挺; 张军; 樊玉伟; 杨建华; 刘列; 殷毅; 罗玲

    2012-01-01

    通过处理强流电子束加速器主开关导通之后所形成的高压电脉冲,得到了二极管等离子体光学诊断的同步时间基准.采用高压电脉冲延时结合二极管等离子体光信号延时的方案,实现了相机曝光过程与等离子体发光过程的ns级精度同步.综合采取屏蔽、滤波等措施,实现了整个系统的电磁兼容,最终稳定地拍摄到了ns时间分辨的二极管等离子体发光过程.%A nanosecond time-resolved imaging platform for diode plasmas diagnostics has been constructed based on the pulsed electron beam accelerator and high speed framing camera(HSFC). The accelerator can provide an electrical pulse with voltages of 200-500 kV, rise-time (from 10% to 90% amplitude) of 25 ns and duration of 110 ns. The diode currents up to kA level can be extracted. The trigger signal for camera was picked up by a water-resistor voltage divider after the main switch of the accelerator, which could avoid the disadvantageous influence of the time jitter caused by the breakdown of the gas gaps. Then the sampled negative electrical pulse was converted into a transistor-transistor logic(TTL) signal (5 V) with rise time of about 1. 5 ns and time jitter less than 1 ns via a processor. And this signal was taken as the synchronization time base. According to the working characteristics of the camera, the synchronization scheme relying mainly on electrical pulse delay method supplemented by light signal delay method was determined to make sure that the camera can work synchronously with the light production and transportation from the diode plasmas within the time scale of nanosecond. Moreover, shielding and filtering methods were used to restrain the interference on the measurement system from the accelerator. Finally, time resolved 2-D framing images of the diode plasmas were acquired.

  4. Development and validation of a high-performance liquid chromatography method using diode array detection for the simultaneous quantification of aripiprazole and dehydro-aripiprazole in human plasma.

    Science.gov (United States)

    Lancelin, Frédérique; Djebrani, Kayssa; Tabaouti, Khalid; Kraoul, Linda; Brovedani, Sophie; Paubel, Pascal; Piketty, Marie-Liesse

    2008-05-01

    A high-performance liquid chromatography method with diode array detection (HPLC-DAD) was developed for quantification of aripiprazole and dehydro-aripiprazole, in human plasma. After a simple liquid-liquid extraction, chromatographic separation was carried out on a C18 reversed-phase column, using an ammonium buffer-acetonitrile mobile phase (40:60, v/v). The total run time was only 7 min at a flow-rate of 1.0 ml/min. The precision values were less than 12% and the accuracy values were ranging from 98 to 113% and the lower limit of quantification was 2 ng/ml for both compounds. Calibration curves were linear over a range of 2-1000 ng/ml. The mean trough plasma concentrations in patients treated with aripiprazole were 157 and 29 ng/ml for aripiprazole and dehydro-aripiprazole, respectively.

  5. Characteristics of a multi-keV monochromatic point x-ray source based on vacuum diode with laser-produced plasma as cathode

    Indian Academy of Sciences (India)

    A Moorti; A Raghuramaiah; P A Naik; P D Gupta

    2004-11-01

    Temporal, spatial and spectral characteristics of a multi-keV monochromatic point x-ray source based on vacuum diode with laser-produced plasma as cathode are presented. Electrons from a laser-produced aluminium plasma were accelerated towards a conical point tip titanium anode to generate K-shell x-ray radiation. Approximately 1010 photons/pulse were generated in x-ray pulses of ∼ 18 to ∼ 28 ns duration from a source of ∼ 300 m diameter, at ℎ = 4.51 keV ( emission of titanium), with a brightness of ∼ 1020 photons/cm2 /s/sr. This was sufficient to record single-shot x-ray radiographs of physical objects on a DEF-5 x-ray film kept at a distance of up to ∼ 10 cm.

  6. High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

    CERN Document Server

    Wuu, D S; Huang, S H; Chung, C R

    2002-01-01

    Dry etch of wafer-bonded AlGaInP/mirror/Si light-emitting diodes (LEDs) with planar electrodes was performed by high-density plasma using an inductively coupled plasma (ICP) etcher. The etching characteristics were investigated by varying process parameters such as Cl sub 2 /N sub 2 gas combination, chamber pressure, ICP power and substrate-bias power. The corresponding plasma properties (ion flux and dc bias), in situ measured by a Langmuir probe, show a strong relationship to the etch results. With a moderate etch rate of 1.3 mu m/min, a near vertical and smooth sidewall profile can be achieved under a Cl sub 2 /(Cl sub 2 +N sub 2) gas mixture of 0.5, ICP power of 800 W, substrate-bias power of 100 W, and chamber pressure of 0.67 Pa. Quantitative analysis of the plasma-induced damage was attempted to provide a means to study the mechanism of leakage current and brightness with various dc bias voltages (-110 to -328 V) and plasma duration (3-5 min) on the wafer-bonded LEDs. It is found that the reverse leaka...

  7. Improved performance of Pd/WO3/SiC Schottky-diode hydrogen gas sensor by using fluorine plasma treatment

    Science.gov (United States)

    Liu, Y.; Tang, W. M.; Lai, P. T.

    2015-08-01

    A high-performance Pd/WO3/SiC Schottky-diode hydrogen gas sensor was fabricated by using fluorine plasma treatment on the WO3 film. From the electrical measurements under various hydrogen concentrations and temperatures, the plasma-treated sensor exhibited a maximum barrier-height change of 279 meV and a static gas sensitivity of more than 30 000, which is 30 times higher than that of the untreated sensor. This significant improvement is attributed to the larger adsorption area caused by the plasma-roughened WO3 film and the lower baseline leakage current induced by fluorine passivation of oxide traps. Additionally, the kinetics analysis and hydrogen coverage of the devices were studied to demonstrate the temperature dependence of the gas sensing behaviors. The hydrogen adsorption enthalpy at the Pd-WO3 interface significantly decreased from -31.2 kJ/mol to -57.6 kJ/mol after the plasma treatment. Therefore, the adsorption process on the plasma-treated sample is much easier and the suppression of sensing properties is more obvious at elevated temperatures above 423 K.

  8. Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes

    Science.gov (United States)

    Chen, Zheng; Wang, Haoran; Wang, Xiao; Chen, Ping; Liu, Yunfei; Zhao, Hongyu; Zhao, Yi; Duan, Yu

    2017-01-01

    Encapsulation is essential to protect the air-sensitive components of organic light-emitting diodes (OLEDs) such as active layers and cathode electrodes. In this study, hybrid zirconium inorganic/organic nanolaminates were fabricated using remote plasma enhanced atomic layer deposition (PEALD) and molecular layer deposition at a low temperature. The nanolaminate serves as a thin-film encapsulation layer for OLEDs. The reaction mechanism of PEALD process was investigated using an in-situ quartz crystal microbalance (QCM) and in-situ quadrupole mass spectrometer (QMS). The bonds present in the films were determined by Fourier transform infrared spectroscopy. The primary reaction byproducts in PEALD, such as CO, CO2, NO, H2O, as well as the related fragments during the O2 plasma process were characterized using the QMS, indicating a combustion-like reaction process. The self-limiting nature and growth mechanisms of the ZrO2 during the complex surface chemical reaction of the ligand and O2 plasma were monitored using the QCM. The remote PEALD ZrO2/zircone nanolaminate structure prolonged the transmission path of water vapor and smooth surface morphology. Consequently, the water barrier properties were significantly improved (reaching 3.078 × 10‑5 g/m2/day). This study also shows that flexible OLEDs can be successfully encapsulated to achieve a significantly longer lifetime.

  9. 5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

    Science.gov (United States)

    Toftul, Alexandra; Polzin, Kurt A.; Hudgins, Jerry L.

    2014-01-01

    Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of µs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high-power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre-ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn-off Thyristors (GTOs) and Silicon-Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast-switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced

  10. A newly validated high-performance liquid chromatography method with diode array ultraviolet detection for analysis of the antimalarial drug primaquine in the blood plasma.

    Science.gov (United States)

    Carmo, Ana Paula Barbosa do; Borborema, Manoella; Ribeiro, Stephan; De-Oliveira, Ana Cecilia Xavier; Paumgartten, Francisco Jose Roma; Moreira, Davyson de Lima

    2017-01-01

    Primaquine (PQ) diphosphate is an 8-aminoquinoline antimalarial drug with unique therapeutic properties. It is the only drug that prevents relapses of Plasmodium vivax or Plasmodium ovale infections. In this study, a fast, sensitive, cost-effective, and robust method for the extraction and high-performance liquid chromatography with diode array ultraviolet detection (HPLC-DAD-UV ) analysis of PQ in the blood plasma was developed and validated. After plasma protein precipitation, PQ was obtained by liquid-liquid extraction and analyzed by HPLC-DAD-UV with a modified-silica cyanopropyl column (250mm × 4.6mm i.d. × 5μm) as the stationary phase and a mixture of acetonitrile and 10mM ammonium acetate buffer (pH = 3.80) (45:55) as the mobile phase. The flow rate was 1.0mL·min-1, the oven temperature was 50OC, and absorbance was measured at 264nm. The method was validated for linearity, intra-day and inter-day precision, accuracy, recovery, and robustness. The detection (LOD) and quantification (LOQ) limits were 1.0 and 3.5ng·mL-1, respectively. The method was used to analyze the plasma of female DBA-2 mice treated with 20mg.kg-1 (oral) PQ diphosphate. By combining a simple, low-cost extraction procedure with a sensitive, precise, accurate, and robust method, it was possible to analyze PQ in small volumes of plasma. The new method presents lower LOD and LOQ limits and requires a shorter analysis time and smaller plasma volumes than those of previously reported HPLC methods with DAD-UV detection. The new validated method is suitable for kinetic studies of PQ in small rodents, including mouse models for the study of malaria.

  11. Determination of penicillamine in pharmaceuticals and human plasma by capillary electrophoresis with in-column fiber optics light-emitting diode induced fluorescence detection.

    Science.gov (United States)

    Yang, Xiupei; Yuan, Hongyan; Wang, Chunling; Su, Xiaodong; Hu, Li; Xiao, Dan

    2007-10-18

    In this paper, a capillary electrophoresis (CE) system with in-column fiber optics light-emitting diode (LED) induced fluorescence detection was developed for the determination of penicillamine (PA). The influence of buffer concentration, buffer pH, applied voltage and injection time was systematically investigated. Optimum separation conditions were obtained with 10 mM borate buffer at pH 9.1, applied voltage 20 kV and 8 s hydrodynamic injection at 30 mbar. The detection system displayed linear dynamic range from 3.2 x 10(-7) to 4.8 x 10(-5) mol L(-1) with a correlation coefficient of 0.9991 and good repeatability (R.S.D.=2.46%). The method was applied to the determination of PA in commercial tablets and human plasma, which the recoveries of standard PA added to tablets and human plasma sample were found to be in the range of 96.26-102.68 and 91.10-99.35%, respectively. The proposed method is cheap, rapid, easy, and accurate, and can be successfully applied to the formulation analysis and bioanalysis.

  12. Diode-Laser Induced Fluorescence Spectroscopy of an Optically Thick Plasma in Combination with Laser Absorption Spectroscopy

    Directory of Open Access Journals (Sweden)

    S. Nomura

    2013-01-01

    Full Text Available Distortion of laser-induced fluorescence profiles attributable to optical absorption and saturation broadening was corrected in combination with laser absorption spectroscopy in argon plasma flow. At high probe-laser intensity, saturated absorption profiles were measured to correct probe-laser absorption. At low laser intensity, nonsaturated absorption profiles were measured to correct fluorescence reabsorption. Saturation broadening at the measurement point was corrected using a ratio of saturated to non-saturated broadening. Observed LIF broadening and corresponding translational temperature without correction were, respectively, 2.20±0.05 GHz and 2510±100 K and corrected broadening and temperature were, respectively, 1.96±0.07 GHz and 1990±150 K. Although this correction is applicable only at the center of symmetry, the deduced temperature agreed well with that obtained by LAS with Abel inversion.

  13. Study of an H{sub 2}/CH{sub 4} moderate pressure microwave plasma used for diamond deposition: modelling and IR tuneable diode laser diagnostic

    Energy Technology Data Exchange (ETDEWEB)

    Lombardi, G [Laboratoire d' Ingenierie des Materiaux et des Hautes Pressions, CNRS UPR 1311, Universite Paris 13, 99 av. J.B. Clement, 93430 Villetaneuse (France); Hassouni, K [Laboratoire d' Ingenierie des Materiaux et des Hautes Pressions, CNRS UPR 1311, Universite Paris 13, 99 av. J.B. Clement, 93430 Villetaneuse (France); Stancu, G D [INP-Greifswald, Friedrich-Ludwig-Jahn-Str. 19, 17489 Greifswald (Germany); Mechold, L [Laser Components GmbH, Werner-von-Siemens-Str. 15, 82140 Olching (Germany); Roepcke, J [INP-Greifswald, Friedrich-Ludwig-Jahn-Str. 19, 17489 Greifswald (Germany); Gicquel, A [Laboratoire d' Ingenierie des Materiaux et des Hautes Pressions, CNRS UPR 1311, Universite Paris 13, 99 av. J.B. Clement, 93430 Villetaneuse (France)

    2005-08-01

    Infra-red tuneable diode laser spectroscopy (IR TDLAS) has been used to detect and quantify the methyl radical and three stable carbon-containing species (CH{sub 4}, C{sub 2}H{sub 2} and C{sub 2}H{sub 6}) in a moderate pressure microwave (f = 2.45 GHz) bell-jar reactor used for diamond films deposition. A wide range of experimental conditions was investigated, with typical pressure/power required to perform diamond deposition, i.e. pressure from 2500 to 12 000 Pa and power from 600 W to 2 kW, which means gas temperatures ranging from 2200 to 3200 K, when the power density increases from 9 to 30 W cm{sup -3}. Since TDLAS is a line of sight averaged technique, the analysis of the experimental data required the use of a one-dimensional non-equilibrium transport model that provides species density and gas temperature variations along the optical beam. This model describes the plasma in terms of 28 species/131 reactions reactive flow. The thermal non-equilibrium is described by distinguishing a first energy mode for the electron and a second one for the heavy species. Parametric studies as a function of power density and methane percentage in the gas mixture are presented. The good agreement obtained between measurement and one-dimensional radial calculations allows a validation of the thermo-chemical model, which can be used as a tool to enlighten the chemistry in the spatially non-uniform H{sub 2}/CH{sub 4} microwave discharge used for diamond deposition. This is especially of interest for high power density discharge conditions that remain poorly understood.

  14. Plasma Studies in Ion Diodes.

    Science.gov (United States)

    1984-09-01

    Czerny -Turner grating spectrometer with a linear dispersion of 26.5 A/mm. The output light was monitored with an EMI 9781R photomultiplier tube, which...Phys. Tech. Phys. 7 1015 (1982). 62. R. P. Little and W. T: Whitney. J. Appl. Phys. 34. 3142 (1963). 63. W. S. Boyle. P. Kisliuk. and L. H. Germer

  15. Liquid-liquid extraction combined with high performance liquid chromatography-diode array-ultra-violet for simultaneous determination of antineoplastic drugs in plasma

    Directory of Open Access Journals (Sweden)

    Ananda Lima Sanson

    2011-06-01

    Full Text Available A liquid-liquid extraction (LLE combined with high-performance liquid chromatography-diode array detection method for simultaneous analysis of four chemically and structurally different antineoplastic drugs (cyclophosphamide, doxorubicin, 5-fluorouracil and ifosfamide was developed. The assay was performed by isocratic elution, with a C18 column (5 µm, 250 x 4.6 mm and mobile phase constituted by water pH 4.0- acetonitrile-methanol (68:19:13, v/v/v, which allowed satisfactory separation of the compounds of interest. LLE, with ethyl acetate, was used for sample clean-up with recoveries ranging from 60 to 98%. The linear ranges were from 0.5 to 100 µg mL-1, for doxorubicin and 1 to 100 µg mL-1, for the other compounds. The relative standard deviations ranged from 5.5 to 17.7%. This method is a fast and simple alternative that can be used, simultaneously, for the determination of the four drugs in plasma, with a range enabling quantification of the drugs in pharmacokinetics, bioequivalence and therapeutic drug-monitoring studies.Um método de extração líquido-líquido (ELL combinado com cromatografia líquida de alta eficiência-detector de arranjo de diodos foi desenvolvido para análise simultânea de quatro fármacos antineoplásicos quimicamente e estruturalmente diferentes (ciclofosfamida, doxorrubicina, fluoruracila e ifosfamida. O estudo foi realizado sob condições isocráticas, com coluna C18 (5µm, 250 x 4.6 mm e fase móvel constituída por água pH 4.0-acetonitrila-metanol (68:19:13, v/v/v, que permitiu separação satisfatória dos analitos de interesse. A ELL, com acetato de etila, foi utilizada para limpeza da amostra, com recuperação variando de 60 a 98%. As faixas foram lineares de 0,5 a 100 µg mL-1 para doxorrubicina e 1 a 100 µg mL-1 para os outros compostos. O desvio padrão relativo variou de 5,5 a 17,7%. Este método é uma alternativa rápida e simples que pode ser usado, simultaneamente, para a determinação dos

  16. 大功率半导体激光加工光致等离子体折射效应%Refraction effect of light-induced plasma during high-power diode laser processing

    Institute of Scientific and Technical Information of China (English)

    潘吉兴; 唐霞辉; 盛利民; 钟理京; 许成文

    2015-01-01

    In order to solve the significant shielding effect of light-induced plasma on laser during high-power diode laser processing , with the help of the mathematical model of electron density of light-induced plasma and ABCD matrix algorithm, the shielding effect of light-induced plasma was studied from the view of absorption and refraction based on a diode laser processing system with wavelength of 976nm, spot size of 0.5mm ×1mm and the maximum power of 4kW.The results showed that laser beam shielding effect is mainly due to refraction effect of light -induced plasma under the condition of electron density ne≤1.0 ×1018/cm3 .Laser beam shielding effect changes laser beam shape , i.e., making the laser focus down-shift, enlarging the spot and making the laser energy density smaller .The effect of induced-laser plasma is similar to a negative lens with non-linear gradient refractive index .%为了研究大功率半导体激光加工过程中,光致等离子体对激光光束显著的屏蔽作用,以波长为976nm、光斑尺寸为0.5mm ×1mm、最大功率为4kW的半导体激光加工系统为实验基础,采用了与实际相符的光致等离子体电子密度数学模型和几何光学ABCD矩阵算法,从吸收和折射两方面对光致等离子体的屏蔽作用进行了理论分析和实验研究,得到了在光致等离子体电子密度ne≤1.0×1018/cm3的条件下,光致等离子体的折射效应才是引起半导体激光光束屏蔽的主要原因这一结果。结果表明,光致等离子体改变了聚焦光束的形态,使其焦点下移、光斑变大、能量密度变小,其效果类似于一个非线性梯度折射率的负透镜。

  17. A transient model of a cesium-barium diode

    Energy Technology Data Exchange (ETDEWEB)

    Luke, J.R.; El-Genk, M.S.

    1995-01-01

    In this work a transient model of a Cs-Ba diode is developed, and a series of experiments is performed using a diode equipped with Langmuir probes. The Langmuir probe data show that the electron energy distribution is non-Maxwellian at low discharge currents, indicating the presence of an electron beam from the emitter. Experimental results also showed that the plasma properties are non-homogeneous across the 1 mm diode gap; the electron temperature and plasma potential were higher near the emitter and the plasma density was higher near the collector. Experimental evidence is presented to show that the discharge contracts to a filament below the maximum thermal emission current.

  18. Simultaneous determination of atorvastatin and valsartan in human plasma by solid-based disperser liquid-liquid microextraction followed by high-performance liquid chromatography-diode array detection.

    Science.gov (United States)

    Farajzadeh, Mir Ali; Khorram, Parisa; Pazhohan, Azar

    2016-04-01

    A simple, sensitive, and efficient method has been developed for simultaneous estimation of valsartan and atorvastatin in human plasma by combination of solid-based dispersive liquid-liquid microextraction and high performance liquid chromatography-diode array detection. In the proposed method, 1,2-dibromoethane (extraction solvent) is added on a sugar cube (as a solid disperser) and it is introduced into plasma sample containing the analytes. After manual shaking and centrifugation, the resultant sedimented phase is subjected to back extraction into a small volume of sodium hydrogen carbonate solution using air-assisted liquid-liquid microextraction. Then the cloudy solution is centrifuged and the obtained aqueous phase is transferred into a microtube and analyzed by the separation system. Under the optimal conditions, extraction recoveries are obtained in the range of 81-90%. Calibration curves plotted in drug-free plasma sample are linear in the ranges of 5-5000μgL(-1) for valsartan and 10-5000μgL(-1) for atorvastatin with the coefficients of determination higher than 0.997. Limits of detection and quantification of the studied analytes in plasma sample are 0.30-2.6 and 1.0-8.2μgL(-1), respectively. Intra-day (n=6) and inter-days (n=4) precisions of the method are satisfactory with relative standard deviations less than 7.4% (at three levels of 10, 500, and 2000μgL(-1), each analyte). These data suggest that the method can be successfully applied to determine trace amounts of valsartan and atorvastatin in human plasma samples.

  19. Theoretical studies on ionospheric irregularities and ion diode performance

    Science.gov (United States)

    Sudan, R. N.

    1993-08-01

    Work accomplished is divided into three parts: ionospheric physics; ion diodes, magnetic insulation, and plasma opening switches; and subgrid modeling in numerical computations and other research. Abstracts of published and conference papers are presented.

  20. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  1. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  2. Header For Laser Diode

    Science.gov (United States)

    Rall, Jonathan A. R.; Spadin, Paul L.

    1990-01-01

    Header designed to contain laser diode. Output combined incoherently with outputs of other laser diodes in grating laser-beam combiner in optical communication system. Provides electrical connections to laser diode, cooling to thermally stabilize laser operation, and optomechanical adjustments that steer and focus laser beam. Range of adjustments provides for correction of worst-case decentering and defocusing of laser beam encountered with laser diodes. Mechanical configuration made simple to promote stability and keep cost low.

  3. Pulsed Plasma Electron Sources

    Science.gov (United States)

    Krasik, Yakov

    2008-11-01

    Pulsed (˜10-7 s) electron beams with high current density (>10^2 A/cm^2) are generated in diodes with electric field of E > 10^6 V/cm. The source of electrons in these diodes is explosive emission plasma, which limits pulse duration; in the case E Hadas and Ya. E. Krasik, Europhysics Lett. 82, 55001 (2008).

  4. Lighting with laser diodes

    Science.gov (United States)

    Basu, Chandrajit; Meinhardt-Wollweber, Merve; Roth, Bernhard

    2013-08-01

    Contemporary white light-emitting diodes (LEDs) are much more efficient than compact fluorescent lamps and hence are rapidly capturing the market for general illumination. LEDs are also replacing halogen lamps or even newer xenon based lamps in automotive headlamps. Because laser diodes are inherently much brighter and often more efficient than corresponding LEDs, there is great research interest in developing laser diode based illumination systems. Operating at higher current densities and with smaller form factors, laser diodes may outperform LEDs in the future. This article reviews the possibilities and challenges in the integration of visible laser diodes in future illumination systems.

  5. Laser Diode Ignition (LDI)

    Science.gov (United States)

    Kass, William J.; Andrews, Larry A.; Boney, Craig M.; Chow, Weng W.; Clements, James W.; Merson, John A.; Salas, F. Jim; Williams, Randy J.; Hinkle, Lane R.

    1994-01-01

    This paper reviews the status of the Laser Diode Ignition (LDI) program at Sandia National Labs. One watt laser diodes have been characterized for use with a single explosive actuator. Extensive measurements of the effect of electrostatic discharge (ESD) pulses on the laser diode optical output have been made. Characterization of optical fiber and connectors over temperature has been done. Multiple laser diodes have been packaged to ignite multiple explosive devices and an eight element laser diode array has been recently tested by igniting eight explosive devices at predetermined 100 ms intervals.

  6. Concurrent determination of olanzapine, risperidone and 9-hydroxyrisperidone in human plasma by ultra performance liquid chromatography with diode array detection method: application to pharmacokinetic study.

    Science.gov (United States)

    Siva Selva Kumar, M; Ramanathan, M

    2016-02-01

    A simple and sensitive ultra-performance liquid chromatography (UPLC) method has been developed and validated for simultaneous estimation of olanzapine (OLZ), risperidone (RIS) and 9-hydroxyrisperidone (9-OHRIS) in human plasma in vitro. The sample preparation was performed by simple liquid-liquid extraction technique. The analytes were chromatographed on a Waters Acquity H class UPLC system using isocratic mobile phase conditions at a flow rate of 0.3 mL/min and Acquity UPLC BEH shield RP18 column maintained at 40°C. Quantification was performed on a photodiode array detector set at 277 nm and clozapine was used as internal standard (IS). OLZ, RIS, 9-OHRIS and IS retention times were found to be 0.9, 1.4, .1.8 and 3.1 min, respectively, and the total run time was 4 min. The method was validated for selectivity, specificity, recovery, linearity, accuracy, precision and sample stability. The calibration curve was linear over the concentration range 1-100 ng/mL for OLZ, RIS and 9-OHRIS. Intra- and inter-day precisions for OLZ, RIS and 9-OHRIS were found to be good with the coefficient of variation <6.96%, and the accuracy ranging from 97.55 to 105.41%, in human plasma. The validated UPLC method was successfully applied to the pharmacokinetic study of RIS and 9-OHRIS in human plasma.

  7. Terahertz Diode Development

    Science.gov (United States)

    2009-03-23

    Gunn Diode , Negative Differential Resistance, Ballistic Transport, GaN, THz, Co-planar Resonator 16. SECURITY CLASSIFICATION OF: REPORT U b...Report DATES COVERED (From - Jo) 1 January 2004- 31 December 2008 4. TITLE AND SUBTITLE Terahertz Diode Development 5a. CONTRACT NUMBER N00014...current-voltage oscillations at the terminals of the diode at a frequency which is, to first order, determined by the average transit time of the EAL

  8. Coaxial foilless diode

    Directory of Open Access Journals (Sweden)

    Long Kong

    2014-05-01

    Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  9. Ultra High Performance Liquid Chromatography Method for the Determination of Two Recently FDA Approved TKIs in Human Plasma Using Diode Array Detection

    Science.gov (United States)

    Fouad, Marwa; Blankert, Bertrand

    2015-01-01

    Generally, tyrosine kinase inhibitors have narrow therapeutic window and large interpatient variability compared to intrapatient variability. In order to support its therapeutic drug monitoring, two fast and accurate methods were developed for the determination of recently FDA approved anticancer tyrosine kinase inhibitors, afatinib and ibrutinib, in human plasma using ultra high performance liquid chromatography coupled to PDA detection. Diclofenac sodium was used as internal standard. The chromatographic separation was achieved on an Acquity UPLC BEH C18 analytical column using a mobile phase combining ammonium formate buffer and acetonitrile at a constant flow rate of 0.4 mL/min using gradient elution mode. A µSPE (solid phase extraction) procedure, using Oasis MCX µElution plates, was processed and it gave satisfying and reproducible results in terms of extraction yields. Additionally, the methods were successfully validated using the accuracy profiles approach (β = 95% and acceptance limits = ±15%) over the ranges 5–250 ng/mL for afatinib and from 5 to 400 ng/mL for ibrutinib in human plasma. PMID:26101692

  10. Ultra High Performance Liquid Chromatography Method for the Determination of Two Recently FDA Approved TKIs in Human Plasma Using Diode Array Detection

    Directory of Open Access Journals (Sweden)

    Marwa Fouad

    2015-01-01

    Full Text Available Generally, tyrosine kinase inhibitors have narrow therapeutic window and large interpatient variability compared to intrapatient variability. In order to support its therapeutic drug monitoring, two fast and accurate methods were developed for the determination of recently FDA approved anticancer tyrosine kinase inhibitors, afatinib and ibrutinib, in human plasma using ultra high performance liquid chromatography coupled to PDA detection. Diclofenac sodium was used as internal standard. The chromatographic separation was achieved on an Acquity UPLC BEH C18 analytical column using a mobile phase combining ammonium formate buffer and acetonitrile at a constant flow rate of 0.4 mL/min using gradient elution mode. A µSPE (solid phase extraction procedure, using Oasis MCX µElution plates, was processed and it gave satisfying and reproducible results in terms of extraction yields. Additionally, the methods were successfully validated using the accuracy profiles approach (β = 95% and acceptance limits = ±15% over the ranges 5–250 ng/mL for afatinib and from 5 to 400 ng/mL for ibrutinib in human plasma.

  11. Sequential cloud-point extraction for toxicological screening analysis of medicaments in human plasma by high pressure liquid chromatography with diode array detector.

    Science.gov (United States)

    Madej, Katarzyna; Persona, Karolina; Wandas, Monika; Gomółka, Ewa

    2013-10-18

    A complex extraction system with the use of cloud-point extraction technique (CPE) was developed for sequential isolation of basic and acidic/neutral medicaments from human plasma/serum, screened by HPLC/DAD method. Eight model drugs (paracetamol, promazine, chlorpromazine, amitriptyline, salicyclic acid, opipramol, alprazolam and carbamazepine) were chosen for the study of optimal CPE conditions. The CPE technique consists in partition of an aqueous sample with addition of a surfactant into two phases: micelle-rich phase with the isolated compounds and water phase containing a surfactant below the critical micellar concentration, mainly under influence of temperature change. The proposed extraction system consists of two chief steps: isolation of basic compounds (from pH 12) and then isolation of acidic/neutral compounds (from pH 6) using surfactant Triton X-114 as the extraction medium. Extraction recovery varied from 25.2 to 107.9% with intra-day and inter-day precision (RSD %) ranged 0.88-1087 and 5.32-17.96, respectively. The limits of detection for the studied medicaments at λ 254nm corresponded to therapeutic or low toxic plasma concentration levels. Usefulness of the proposed CPE-HPLC/DAD method for toxicological drug screening was tested via its application to analysis of two serum samples taken from patients suspected of drug overdosing.

  12. Determination of gemcitabine and its metabolite in human plasma using high-pressure liquid chromatography coupled with a diode array detector

    Institute of Scientific and Technical Information of China (English)

    Neng-ming LIN; Su ZENG; Sheng-lin MA; Yun FAN; Hai-jun ZHONG; Luo FANG

    2004-01-01

    AIM: To establish a high pressure liquid chromatography (HPLC) method for determination of the concentration of gemcitabine (dFdC) and its metabolite (dFdU) in human plasma. METHODS: Plasma 1.0mL spiked with floxuridine as an internal standard was extracted with 3.0 mL of methanol-acetonitrile (v/v, 1:9). The supernatant was evaporated at 60 ℃ and the residue was reconstituted with 0.5 mL of the solution used as the mobile phase. After centrifugation, 50 μL of the supernatant was injected into the HPLC system. Separation was achieved on a C18(4.6 mm×250 mm, 5μm) column at 25℃ with the flow rate of the mobile phase set to 0.8 mL/min. The compounds were detected at 268 nm. The mobile phase consisted of 40.0 mmol/L acetate ammonium buffer solution (pH 5.5) and acetonitrile (v/v, 97.5:2.5). RESULTS: The linear range was 0.20-10.0 mg/L (r=0.9999) for dFdC and 0.50-50.0 mg/L (r=0.9999) for dFdU. The limit of detection (LOD) was 0.10 mg/L for dFdC and 0.25mg/L for dFdU, while the limit of quantification (LOQ) was 0.20 mg/L (RSD<10%) for dFdC and 0.50 mg/L (RSD <3%) for dFdU. The average recovery of dFdC and dFdU by this method were 103.3% and 98.7%, respectively.For intra-day and inter-day, the corresponding standard deviations of the measurements of dFdC and dFdU were both less than 5.5%. CONCLUSION: An analytical method was established to measure the concentrations of dFdC and dFdU in human plasma and was effectively applied to the dFdC and dFdU pharmacokinetic studies of 8Chinese patients with malignant tumors.

  13. Reversed-phase ion-pair chromatography-diode array detection of the bispyridinium compound MB327: plasma analysis of a potential novel antidote for the treatment of organophosphorus poisoning.

    Science.gov (United States)

    John, Harald; Mikler, John; Worek, Franz; Thiermann, Horst

    2016-02-01

    In the case of poisoning by organophosphorus nerve agents or pesticides, there is still a lack of pharmacological treatment of the cholinergic crisis selectively targeting the nicotinic acetylcholine receptor. Recently, the compound MB327 was identified as a potential novel lead structure to close this gap, thus demanding a quantitative assay for initial pharmacokinetic (PK) studies. MB327 is a salt consisting of the dicationic bispyridinium compound (BPC) 1,1´-(propane-1,3-diyl)bis(4-tert-butylpyridinium) and two iodide counter ions. Due to the permanent positive charge of the BPC, an isocratic reversed-phase ion-pair chromatographic separation (RPIPC) was developed using heptanesulfonic acid as ion-pairing reagent and 45% v/v methanol as organic modifier (1 mL/min). Selective UV-detection (230 nm) was done by a diode array detector (DAD) for reliable, rugged, precise (RSD < 7%) and accurate (96-104%) quantitative analysis of 50 μL swine plasma (linear range 1-1000 µg BPC/mL plasma, lower limit of quantification 2 µg/mL). During method validation, diverse parameters essential for the chromatographic process were investigated to generate van´t Hoff, van Deemter and width plots allowing calculation of thermodynamic data like the distribution constant K (5.7 ± 0.3), change in enthalpy, ΔH(0) : -23.66 kJ/mol, and entropy, ΔS(0) : -65 J/(mol*K). In addition, RPIPC-DAD analysis enabled calculation of molar absorptivities of the BPC, ε230 : 17 400 ± 1100 L/(mol*cm), and iodide, ε230 : 9900 ± 400 L/(mol*cm), which determination was hampered by interference with each other in conventional cuvette UV-spectrophotometric measurements. Finally, the RPIPC-DAD procedure was applied to samples from an in vivo study of swine.

  14. Powerful infrared emitting diodes

    Directory of Open Access Journals (Sweden)

    Kogan L. M.

    2012-02-01

    Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

  15. 100 years of the physics of diodes

    Science.gov (United States)

    Zhang, Peng; Valfells, Ágúst; Ang, L. K.; Luginsland, J. W.; Lau, Y. Y.

    2017-03-01

    The Child-Langmuir Law (CL), discovered a century ago, gives the maximum current that can be transported across a planar diode in the steady state. As a quintessential example of the impact of space charge shielding near a charged surface, it is central to the studies of high current diodes, such as high power microwave sources, vacuum microelectronics, electron and ion sources, and high current drivers used in high energy density physics experiments. CL remains a touchstone of fundamental sheath physics, including contemporary studies of nanoscale quantum diodes and nano gap based plasmonic devices. Its solid state analog is the Mott-Gurney law, governing the maximum charge injection in solids, such as organic materials and other dielectrics, which is important to energy devices, such as solar cells and light emitting diodes. This paper reviews the important advances in the physics of diodes since the discovery of CL, including virtual cathode formation and extension of CL to multiple dimensions, to the quantum regime, and to ultrafast processes. We review the influence of magnetic fields, multiple species in bipolar flow, electromagnetic and time dependent effects in both short pulse and high frequency THz limits, and single electron regimes. Transitions from various emission mechanisms (thermionic-, field-, and photoemission) to the space charge limited state (CL) will be addressed, especially highlighting the important simulation and experimental developments in selected contemporary areas of study. We stress the fundamental physical links between the physics of beams to limiting currents in other areas, such as low temperature plasmas, laser plasmas, and space propulsion.

  16. Chemically Modulated Graphene Diodes

    OpenAIRE

    Kim, Hye-young; Lee, Kangho; McEvoy, Niall; Yim, Chanyoung; Duesberg, Georg S.

    2013-01-01

    PUBLISHED We report the manufacture of novel graphene diode sensors (GDS), which are composed of monolayer graphene on silicon substrates, allowing exposure to liquids and gases. Parameter changes in the diode can be correlated with charge transfer from various adsorbates. The GDS allows for investigation and tuning of extrinsic doping of graphene with great reliability. The demonstrated recovery and long-term stability qualifies the GDS as a new platform for gas, environmental, and biocom...

  17. Light-emitting Diodes

    Science.gov (United States)

    Opel, Daniel R.; Hagstrom, Erika; Pace, Aaron K.; Sisto, Krisanne; Hirano-Ali, Stefanie A.; Desai, Shraddha

    2015-01-01

    Background: In the early 1990s, the biological significance of light-emitting diodes was realized. Since this discovery, various light sources have been investigated for their cutaneous effects. Study design: A Medline search was performed on light-emitting diode lights and their therapeutic effects between 1996 and 2010. Additionally, an open-label, investigator-blinded study was performed using a yellow light-emitting diode device to treat acne, rosacea, photoaging, alopecia areata, and androgenetic alopecia. Results: The authors identified several case-based reports, small case series, and a few randomized controlled trials evaluating the use of four different wavelengths of light-emitting diodes. These devices were classified as red, blue, yellow, or infrared, and covered a wide range of clinical applications. The 21 patients the authors treated had mixed results regarding patient satisfaction and pre- and post-treatment evaluation of improvement in clinical appearance. Conclusion: Review of the literature revealed that differing wavelengths of light-emitting diode devices have many beneficial effects, including wound healing, acne treatment, sunburn prevention, phototherapy for facial rhytides, and skin rejuvenation. The authors’ clinical experience with a specific yellow light-emitting diode device was mixed, depending on the condition being treated, and was likely influenced by the device parameters. PMID:26155326

  18. Comparative study of the action of two different types of bleaching agents activated by two different types of irradiation fonts: xenon plasma arc lamp and 960 nm diode laser; Avaliacao da cor e estudo comparativo da acao de dois tipos diferentes de agentes clareadores ativados pelo laser de diodo e lampada xenonio plasmatica, na superficie do esmalte

    Energy Technology Data Exchange (ETDEWEB)

    Walverde, Debora Ayala

    2001-07-01

    This in vitro study compares two different types of tooth bleaching agents stimulated with two different irradiation fonts. These fonts accelerate the action of the bleaching agents upon the enamel surface by heating up the materials. We used the xenon plasma arc lamp and a 960 nm fiber-coupled diode laser to irradiate the two materials containing 35% of hydrogen peroxide (Opus White and Opalescence extra). The color of the teeth was measured with a spectrophotometer using the CIELAB color system that gives the numeric values of L{sup *}a{sup *}b{sup *}. (author)

  19. Fluorine plasma treatment induced deep level traps and their effect on current transportation in Al0.83In0.17N/AlN/GaN Schottky barrier diodes

    Science.gov (United States)

    Xiang, Yong; Yu, Tongjun; Ji, Cheng; Cheng, Yutian; Yang, Xuelin; Kang, Xiangning; Shen, Bo; Zhang, Guoyi

    2016-08-01

    The deep level traps and the electrical properties of fluorine plasma treated (F-treated) and non-treated Al0.83In0.17N/AlN/GaN Schottky barrier diodes (SBDs) were investigated by the temperature-dependent current-voltage (I-V) and deep level transient spectroscopy (DLTS) measurements. Three deep level traps were detected in the SBD after F-treatment at ~E c  -  0.17 eV, ~E c  -  0.27 eV and ~E c  -  1.14 eV. One of the deep level traps at ~E c  -  1.14 eV is mainly located in the Al0.83In0.17N barrier layer with a captured cross section (σ) of ~6.50  ×  10-18 cm2. This F-related deep level trap has 3-4 orders of magnitude of the larger σ and ~0.46 eV greater active energy than that of the dislocation-related one at ~E c  -  0.68 eV with σ of ~1.92  ×  10-21 cm2. Meanwhile, the leakage current of F-treated SBD at  -5 V is reduced by ~2 orders of magnitude compared with that of the non-treated one. This leakage current reduction is mainly attributed to the increase of the Poole-Frenkel emission barrier height from ~0.09 eV in non-treated SBD to ~0.46 eV in the F-treated one. It is believed that the main reverse current transportation is the Poole-Frenkel emission from the F-related deep level trap states into the continuum states of the dislocations in F-treated Al0.83In0.17N/AlN/GaN SBD.

  20. Directed and diode percolation

    Science.gov (United States)

    Redner, S.

    1982-03-01

    We study the novel percolation phenomena that occur in random-lattice networks consisting of resistor-like and diode-like bonds. Resistor bonds connect or "transmit information" in either direction along their length, while diodes connect in one direction only. We first treat the special case of directed bond percolation, in which the diodes are aligned along a preferred axis. Mean-field theory shows that clusters become extremely anisotropic near the percolation transition and that their shapes are characterized by two correlation lengths, one parallel and one transverse to the preferred axis. These lengths diverge with exponents ν∥=1 and ν⊥=12, respectively, from which we can show that the upper critical dimension for this system must be five. We also treat a more general random network on the square lattice containing resistors and diodes of arbitrary orientation. Duality arguments are applied to obtain exact results for the location of phase transitions in this system. We then use a position-space renormalization-group approach to map out the phase diagram and calculate critical exponents. This system has an isotropic percolating phase, and phases which percolate in only one direction. Novel types of transitions occur between these phases, in which the diode orientation plays a fundamental role. These percolating phases meet with the nonpercolating phase along a line of multicritical points, where concentration and orientational fluctuations are simultaneously critical.

  1. Optical and electrical investigations into cathode ignition and diode closure

    Energy Technology Data Exchange (ETDEWEB)

    Coogan, J.J.; Rose, E.A.; Shurter, R.P.

    1991-01-01

    The temporal behavior of high-power diodes is closely related to the impedance collapse caused by the movement of the cathode and/or anode plasmas. This impedance collapse can be especially problematic when a constant power electron beam is required. This is the case for the very large area (square meters) diodes used to pump the amplifiers within the Aurora KrF laser system. The electron beam technology development program at Los Alamos utilizes the Electron Beam Test Facility (EGTF) to study diode physics in an attempt to better understand the basic phenomenology of ignition and closure. A combination of optical and electric diagnostics has been fielded on the Electron Beam Test Facility to study ignition and closure in large area electron beam diodes. A four-channel framing camera is used to observe the formation of microplasmas on the surface of the cathode and the subsequent movement of these plasmas toward the anode. Additionally, a perveance model is used to extract information about this plasma from voltage and current profiles. Results from the two diagnostics are compared. Closure velocity measurements are presented showing little dependence on applied magnetic field for both velvet and carbon felt emitters. We also report the first observation of the screening effect in large area cold cathode diodes. 13 refs., 11 figs.

  2. Optical and electrical investigations into cathode ignition and diode closure

    Science.gov (United States)

    Coogan, J. J.; Rose, E. A.; Shurter, R. P.

    The temporal behavior of high-power diodes is closely related to the impedance collapse caused by the movement of the cathode and/or anode plasmas. This impedance collapse can be especially problematic when a constant power electron beam is required. This is the case for the very large area (square meters) diodes used to pump the amplifiers within the Aurora KrF laser system. The electron beam technology development program at Los Alamos utilizes the Electron Beam Test Facility (EGTF) to study diode physics in an attempt to better understand the basic phenomenology of ignition and closure. A combination of optical and electric diagnostics has been fielded on the Electron Beam Test Facility to study ignition and closure in large area electron beam diodes. A four-channel framing camera is used to observe the formation of microplasmas on the surface of the cathode and the subsequent movement of these plasmas toward the anode. Additionally, a perveance model is used to extract information about this plasma from voltage and current profiles. Results from the two diagnostics are compared. Closure velocity measurements are presented showing little dependence on applied magnetic field for both velvet and carbon felt emitters. We also report the first observation of the screening effect in large area cold cathode diodes.

  3. Silicon Carbide Schottky Barrier Diode

    Science.gov (United States)

    Zhao, Jian H.; Sheng, Kuang; Lebron-Velilla, Ramon C.

    2004-01-01

    This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin-Schottky diodes. The development history is reviewed ad the key performance parameters are discussed. Applications of SiC SBDs in power electronic circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

  4. Plasma Physics An Introduction to Laboratory, Space, and Fusion Plasmas

    CERN Document Server

    Piel, Alexander

    2010-01-01

    Plasma Physics gives a comprehensive introduction to the basic processes in plasmas and demonstrates that the same fundamental concepts describe cold gas-discharge plasmas, space plasmas, and hot fusion plasmas. Starting from particle drifts in magnetic fields, the principles of magnetic confinement fusion are explained and compared with laser fusion. Collective processes are discussed in terms of plasma waves and instabilities. The concepts of plasma description by magnetohydrodynamics, kinetic theory, and particle simulation are stepwise introduced. Space charge effects in sheath regions, double layers and plasma diodes are given the necessary attention. The new fundamental mechanisms of dusty plasmas are explored and integrated into the framework of conventional plasmas. The book concludes with a brief introduction to plasma discharges. Written by an internationally renowned researcher in experimental plasma physics, the text keeps the mathematical apparatus simple and emphasizes the underlying concepts. T...

  5. Advanced Laser and RF Plasma Sources and Diagnostics

    Science.gov (United States)

    2007-06-13

    jacks, fibers, collimators, and breadboards $19,832.71 Interferometry Gunn diode and I-Q mixer $6,775.00 RF Components and Automation High...temperature diagnostics for both our laser window and radiofrequency air plasmas. We have also acquired a tunable 668 nm diode laser, optical filters...diagnostics for both our laser window and radiofrequency air plasmas. We have also acquired a tunable 668 nm diode laser, optical filters, splitters

  6. Plasma physics an introduction to laboratory, space, and fusion plasmas

    CERN Document Server

    Piel, Alexander

    2017-01-01

    The enlarged new edition of this textbook provides a comprehensive introduction to the basic processes in plasmas and demonstrates that the same fundamental concepts describe cold gas-discharge plasmas, space plasmas, and hot fusion plasmas. Starting from particle drifts in magnetic fields, the principles of magnetic confinement fusion are explained and compared with laser fusion. Collective processes are discussed in terms of plasma waves and instabilities. The concepts of plasma description by magnetohydrodynamics, kinetic theory, and particle simulation are stepwise introduced. Space charge effects in sheath regions, double layers and plasma diodes are given the necessary attention. The novel fundamental mechanisms of dusty plasmas are explored and integrated into the framework of conventional plasmas. The book concludes with a concise description of modern plasma discharges. Written by an internationally renowned researcher in experimental plasma physics, the text keeps the mathematical apparatus simple a...

  7. p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

    Science.gov (United States)

    Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

    2000-01-01

    A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

  8. Hyperchaos via X-Diode

    DEFF Research Database (Denmark)

    Lindberg, Erik; Tamasevicius, A.; Cenys, A.

    1998-01-01

    A Chaos diode (X-diode) with a hysteric current-voltage characteristic has been used to generate hyperchaotic oscillations characterized with multiple positive Lyapunov exponents. The hyperchaotic oscillators comprise a X-diode in parallel with an M'th order LC loop (M.GE.4). Numerical simulations...... and hardware experiments have beeen performed. An appropriate mathematical model is provided and is used to calculate the Lyapunov exponents. Synchronization properties have been investigated....

  9. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  10. Photoporation and cell transfection using a violet diode laser

    Science.gov (United States)

    Paterson, L.; Agate, B.; Comrie, M.; Ferguson, R.; Lake, T. K.; Morris, J. E.; Carruthers, A. E.; Brown, C. T. A.; Sibbett, W.; Bryant, P. E.; Gunn-Moore, F.; Riches, A. C.; Dholakia, Kishan

    2005-01-01

    The introduction and subsequent expression of foreign DNA inside living mammalian cells (transfection) is achieved by photoporation with a violet diode laser. We direct a compact 405 nm laser diode source into an inverted optical microscope configuration and expose cells to 0.3 mW for 40 ms. The localized optical power density of ~1200 MW/m2 is six orders of magnitude lower than that used in femtosecond photoporation (~104 TW/m2). The beam perforates the cell plasma membrane to allow uptake of plasmid DNA containing an antibiotic resistant gene as well as the green fluorescent protein (GFP) gene. Successfully transfected cells then expand into clonal groups which are used to create stable cell lines. The use of the violet diode laser offers a new and simple poration technique compatible with standard microscopes and is the simplest method of laser-assisted cell poration reported to date.

  11. Diode laser applications in urology

    Science.gov (United States)

    Sam, Richard C.; Esch, Victor C.

    1995-05-01

    Diode lasers are air-cooled, efficient, compact devices which have the potential of very low cost when produced in quantity. The characteristics of diode lasers are discussed. Their applications in interstitial thermal treatment of the prostate, and laser ablation of prostate tissues, will be presented.

  12. Gallium phosphide high temperature diodes

    Science.gov (United States)

    Chaffin, R. J.; Dawson, L. R.

    1981-01-01

    High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

  13. Metabolic profiling of nuciferine in rat urine, plasma, bile and feces after oral administration using ultra-high performance liquid chromatography-diode array detection-quadrupole time-of-flight mass spectrometry.

    Science.gov (United States)

    Wu, Xiao-Lei; Wu, Ming-Jiang; Chen, Xin-Ze; Ma, Hao-Ling; Ding, Li-Qin; Qiu, Feng; Pan, Qin; Zhang, De-Qin

    2017-03-18

    Nuciferine, a major alkaloid found in Nelumbinis Folium, exhibits a broad spectrum of bioactivities, such as antiobesity, anti-diabetes and anti-inflammatory. However, many research regarding nuciferine focused on the extraction, isolation and biological activity, the metabolism is not comprehensively explained in vivo. Thence, the present of this paper is to establish a simple method for speculating metabolites of nuciferine. A total of 15 metabolites were detected and tentatively identified through ultra high performance liquid chromatography-diode array detection-quadrupole time-of-flight mass spectrometry (UHPLC-DAD-QTOF-MS), including 7 new metabolites. Among them, we also discovered a previously unmentioned metabolically active site at the C1-OCH3 position. These metabolites suggested that demethylation, oxidation, glucuronidation and sulfation were major metabolic pathways. This study provided significant experiment basis for its safety estimate and valuable information about the metabolism of nuciferine, which will be advantageous for new drug development.

  14. Angled stripe superluminescent diode

    Energy Technology Data Exchange (ETDEWEB)

    Figueroa, L.; Morrison, C.B.; Zinkiewicz, L.M.; Niesen, J.W.

    1989-08-08

    This patent describes a superluminescent light-emitting diode device having high power output and high spectral bandwidth. The device comprising: a semiconductor structure including at least one channel region formed in a semiconductor substrate and filled with a first semiconductor cladding layer of material having a higher index of refraction than substrate material outside the channel region, to provide lateral index-guiding of light within the channel region. The semiconductor structure also including a second semiconductor cladding layer of opposite conductivity type to the first, an active semiconductor layer at a junction between the first and second semiconductor cladding layers, and at least one emitting facet formed at a channel end; means for applying an electrical forward-bias voltage across the junction to produce emission of light; and wherein the channel is slightly inclined to a direction normal to the facet, to suppress lasing within the device, which can then operated at high powers and a broad spectral width.

  15. Diode-pumped dye laser

    Science.gov (United States)

    Burdukova, O. A.; Gorbunkov, M. V.; Petukhov, V. A.; Semenov, M. A.

    2016-10-01

    This letter reports diode pumping for dye lasers. We offer a pulsed dye laser with an astigmatism-compensated three-mirror cavity and side pumping by blue laser diodes with 200 ns pulse duration. Eight dyes were tested. Four dyes provided a slope efficiency of more than 10% and the highest slope efficiency (18%) was obtained for laser dye Coumarin 540A in benzyl alcohol.

  16. Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV

    Science.gov (United States)

    Etchessahar, Bertrand; Bernigaud, Virgile; Caron, Michel; Cartier, Frédéric; Cartier, Stéphanie; Hourdin, Laurent; Magnin, Laurent; Nicolas, Rémi; Poulet, Frédéric; Rosol, Rodolphe; Tailleur, Yaël; Toury, Martial; Compant La Fontaine, Antoine; Bicrel, Béatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Hébert, David; Delbos, Christophe; Garrigues, Alain; Soleilhavoup, Isabelle

    2012-09-01

    The negative polarity rod pinch diode (NPRPD) is a potential millimeter spot size radiography source for high voltage generators (4 to 8 MV) [Cooperstein et al., "Considerations of rod-pinch diode operation in negative polarity for radiography," in Proceedings of the 14th IEEE Pulsed Power Conference, 2003, pp. 975-978]. The NPRPD consists of a small diameter (few mm) cylindrical anode extending from the front end of the vacuum cell through a thin annular cathode, held by a central conductor. The polarity has been inverted when compared to the original rod pinch diode [Cooperstein et al., "Theoretical modeling and experimental characterization of a rod-pinch diode," Phys. Plasmas 8(10), 4618-4636 (2001)] in order to take advantage from the maximal x-ray emission toward the anode holder at such a voltage [Swanekamp et al., "Evaluation of self-magnetically pinched diodes up to 10 MV as high resolution flash X-ray sources," IEEE Trans. Plasma Sci. 32(5), 2004-2016 (2004). We have studied this diode at 4.5 MV, driven by the ASTERIX generator [Raboisson et al., "ASTERIX, a high intensity X-ray generator," in Proceedings of the 7th IEEE Pulsed Power Conference, 1989, pp. 567-570.]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode has been modified in order to set up flash a radiographic diode [Etchessahar et al., "Negative polarity rod pinch diode experiments on the ASTERIX generator," in Conference Records-Abstracts, 37th IEEE International Conference on Plasma Science, 2010]. The experiments and numerical simulations presented here allowed the observation and analysis of various physical phenomena associated with the diode operation. Also, the influence of several experimental parameters, such as cathode and anode diameters, materials and surface states, was examined. In order to achieve the most comprehensive characterization of the

  17. Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV

    Energy Technology Data Exchange (ETDEWEB)

    Etchessahar, Bertrand; Bicrel, Beatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Hebert, David [CEA, DAM, CESTA, F-33114 Le Barp (France); Bernigaud, Virgile; Magnin, Laurent; Nicolas, Remi; Poulet, Frederic; Tailleur, Yaeel [CEA, DAM, VALDUC, F-21120 Is sur Tille (France); Caron, Michel; Cartier, Frederic; Cartier, Stephanie; Hourdin, Laurent; Rosol, Rodolphe; Toury, Martial; Delbos, Christophe; Garrigues, Alain; Soleilhavoup, Isabelle [CEA, DAM, GRAMAT, F-46500 Gramat (France); and others

    2012-09-15

    The negative polarity rod pinch diode (NPRPD) is a potential millimeter spot size radiography source for high voltage generators (4 to 8 MV) [Cooperstein et al., 'Considerations of rod-pinch diode operation in negative polarity for radiography,' in Proceedings of the 14th IEEE Pulsed Power Conference, 2003, pp. 975-978]. The NPRPD consists of a small diameter (few mm) cylindrical anode extending from the front end of the vacuum cell through a thin annular cathode, held by a central conductor. The polarity has been inverted when compared to the original rod pinch diode [Cooperstein et al., 'Theoretical modeling and experimental characterization of a rod-pinch diode,' Phys. Plasmas 8(10), 4618-4636 (2001)] in order to take advantage from the maximal x-ray emission toward the anode holder at such a voltage [Swanekamp et al., 'Evaluation of self-magnetically pinched diodes up to 10 MV as high resolution flash X-ray sources,' IEEE Trans. Plasma Sci. 32(5), 2004-2016 (2004). We have studied this diode at 4.5 MV, driven by the ASTERIX generator [Raboisson et al., 'ASTERIX, a high intensity X-ray generator,' in Proceedings of the 7th IEEE Pulsed Power Conference, 1989, pp. 567-570.]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode has been modified in order to set up flash a radiographic diode [Etchessahar et al., 'Negative polarity rod pinch diode experiments on the ASTERIX generator,' in Conference Records-Abstracts, 37th IEEE International Conference on Plasma Science, 2010]. The experiments and numerical simulations presented here allowed the observation and analysis of various physical phenomena associated with the diode operation. Also, the influence of several experimental parameters, such as cathode and anode diameters, materials and surface states, was examined. In order to

  18. Light Emitting Diodes (LEDs)

    Science.gov (United States)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique, called Photodynamic Therapy, requires the surgeon to use tiny, pinhead-size Light Emitting Diodes (LEDs) (a source that releases long wavelengths of light ) to activate light-sensitive, tumor-treating drugs. 'A young woman operated on in May 1999 has fully recovered with no complications and no evidence of the tumor coming back,' said Dr. Harry Whelan, a pediatric neurologist at the Medical Hospital of Wisconsin in Milwaukee. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can be used for hours at a time while still remaining cool to the touch. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The LEDs, developed and managed by NASA's Marshall Space Flight Center, have been used on seven Space Shuttle flights inside the Microgravity Astroculture Facility. This technology has also been successfully used to further commercial research in crop growth.

  19. Intense ion beam generation, plasma radiation source and plasma opening switch research

    Science.gov (United States)

    Hammer, D. A.; Coleman, M. D.; Qi, N.; Similon, P. L.; Sudan, R. N.

    1989-04-01

    This report describes research on intense ion beam diodes, plasma opening switches and dense z-pinch plasma radiators. Laser induced fluorescence spectroscopy has been used to map the electrostatic potential profile in a plasma-prefilled magnetically insulated ion diode. In a simple planar diode, the measured profile is inconsistent with the electrons being confined in a sheath near the cathode by the magnetic field. Rather, the profile implies the presence of electrons throughout the accelerating gap. A theoretical model of the penetration of current and magnetic field into a plasma, and of the current-driven effective collision frequency has been developed. The snowplow action of the rising magnetic field causes a steep rise in the plasma density at the leading edge. The subsequent multistreaming of the ions caused by ion reflection at the current layer could lead to ion heating through collective effects. The two-dimensional electron flow in the plasma cathode vacuum gap is also treated. Dense z-pinch plasma radiation source experiments have been initiated on the LION accelerator using gas puff and fine wire loads. The x-pinch was found to be a more effective way to generate soft x-rays than a single wire pinch or a gas puff implosion. Plasma opening switch experiments being initiated, and plasma anode ion diode development work being terminated are also briefly described.

  20. Laser Diode Beam Basics, Manipulations and Characterizations

    CERN Document Server

    Sun, Haiyin

    2012-01-01

    Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

  1. Few-photon optical diode

    CERN Document Server

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficiently than the opposite.

  2. Few-photon optical diode

    OpenAIRE

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

  3. Few-photon optical diode

    OpenAIRE

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

  4. Scaling of nano-Schottky-diodes

    NARCIS (Netherlands)

    Smit, G.D.J.; Rogge, S.; Klapwijk, T.M.

    2002-01-01

    A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes th

  5. Ultrafast and nanoscale diodes

    Science.gov (United States)

    Zhang, Peng; Lau, Y. Y.

    2016-10-01

    Charge carrier transport across interfaces of dissimilar materials (including vacuum) is the essence of all electronic devices. Ultrafast charge transport across a nanometre length scale is of fundamental importance in the miniaturization of vacuum and plasma electronics. With the combination of recent advances in electronics, photonics and nanotechnology, these miniature devices may integrate with solid-state platforms, achieving superior performance. This paper reviews recent modelling efforts on quantum tunnelling, ultrafast electron emission and transport, and electrical contact resistance. Unsolved problems and challenges in these areas are addressed.

  6. Terahertz current oscillations assisted by optical phonon emission in GaN n+nn+ diodes: Monte Carlo simulations

    Science.gov (United States)

    Íñiguez-de-la-Torre, A.; Mateos, J.; González, T.

    2010-03-01

    Under certain conditions, plasma instabilities associated with streaming motion of carriers taking place in n+nn+ diodes can lead to current oscillations. The origin of the phenomenon, known as optical phonon transit time resonance, is characterized by a frequency related to the transit time between consecutive optical phonon emissions by electrons along the active region of the diode. By means of Monte Carlo simulations, the possibility to obtaining current oscillations in GaN n+nn+ diodes is analyzed. The optimum conditions for the onset of such mechanism are investigated: applied bias, temperature, doping, and length of the active n region. Simulations show that current oscillations at frequencies in the terahertz range can be obtained at very low temperatures. Moreover, by choosing the appropriate applied voltage and length of the n region, some degree of tunability can be achieved for frequencies close to the plasma frequency of the n region of the n+nn+ diode.

  7. Experimental study of self magnetic pinch diode as flash radiography source at 4 megavolt

    Energy Technology Data Exchange (ETDEWEB)

    Etchessahar, Bertrand; Bicrel, Béatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc [CEA, DAM, CESTA—F-33114 Le Barp (France); Maisonny, Rémi; Toury, Martial; Hourdin, Laurent; Cartier, Frédéric; Cartier, Stéphanie; D' Almeida, Thierry; Delbos, Christophe; Garrigues, Alain; Plouhinec, Damien; Ritter, Sandra; Sol, David; Zucchini, Frédéric; Caron, Michel [CEA, DAM, GRAMAT—F-46500 Gramat (France)

    2013-10-15

    The Self Magnetic Pinch (SMP) diode is a potential high-brightness X-ray source for high voltage generators (2–10 MV) that has shown good reliability for flash radiography applications [D. D. Hinchelwood et al., “High power self-pinch diode experiments for radiographic applications” IEEE Trans. Plasma Sci. 35(3), 565–572 (2007)]. We have studied this diode at about 4 MV, driven by the ASTERIX generator operated at the CEA/GRAMAT [G. Raboisson et al., “ASTERIX, a high intensity X-ray generator,” in Proceedings of the 7th IEEE Pulsed Power Conference (1989), pp. 567–570]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode is modified in order to set up flash radiographic diodes. A previous set of radiographic experiments was carried out on ASTERIX with a Negative Polarity Rod Pinch (NPRP) diode [B. Etchessahar et al., “Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV,” Phys. Plasmas 19(9), 093104 (2012)]. The SMP diode which is examined in the present study provides an alternative operating point on the same generator and a different radiographic performance: 142 ± 11 rad at 1 m dose (Al) for a 3.46 ± 0.42 mm spot size (1.4× FWHM of the LSF). This performance is obtained in a reproducible and robust nominal configuration. However, several parametric variations were also tested, such as cathode diameter and anode/cathode gap. They showed that an even better performance is accessible after optimization, in particular, a smaller spot size (<3 mm). Numbers of electrical, optical, and X-ray diagnostics have been implemented in order to gain more insight in the diode physics and to optimize it further. For the first time in France, visible and laser imaging of the SMP diode has been realized, from a radial point of view, thus, providing key information on the electrode

  8. Experimental study of self magnetic pinch diode as flash radiography source at 4 megavolt

    Science.gov (United States)

    Etchessahar, Bertrand; Maisonny, Rémi; Toury, Martial; Hourdin, Laurent; Bicrel, Béatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Cartier, Frédéric; Cartier, Stéphanie; D'Almeida, Thierry; Delbos, Christophe; Garrigues, Alain; Plouhinec, Damien; Ritter, Sandra; Sol, David; Zucchini, Frédéric; Caron, Michel

    2013-10-01

    The Self Magnetic Pinch (SMP) diode is a potential high-brightness X-ray source for high voltage generators (2-10 MV) that has shown good reliability for flash radiography applications [D. D. Hinchelwood et al., "High power self-pinch diode experiments for radiographic applications" IEEE Trans. Plasma Sci. 35(3), 565-572 (2007)]. We have studied this diode at about 4 MV, driven by the ASTERIX generator operated at the CEA/GRAMAT [G. Raboisson et al., "ASTERIX, a high intensity X-ray generator," in Proceedings of the 7th IEEE Pulsed Power Conference (1989), pp. 567-570]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode is modified in order to set up flash radiographic diodes. A previous set of radiographic experiments was carried out on ASTERIX with a Negative Polarity Rod Pinch (NPRP) diode [B. Etchessahar et al., "Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV," Phys. Plasmas 19(9), 093104 (2012)]. The SMP diode which is examined in the present study provides an alternative operating point on the same generator and a different radiographic performance: 142 ± 11 rad at 1 m dose (Al) for a 3.46 ± 0.42 mm spot size (1.4× FWHM of the LSF). This performance is obtained in a reproducible and robust nominal configuration. However, several parametric variations were also tested, such as cathode diameter and anode/cathode gap. They showed that an even better performance is accessible after optimization, in particular, a smaller spot size (<3 mm). Numbers of electrical, optical, and X-ray diagnostics have been implemented in order to gain more insight in the diode physics and to optimize it further. For the first time in France, visible and laser imaging of the SMP diode has been realized, from a radial point of view, thus, providing key information on the electrode plasmas evolution

  9. Powerful diode nanosecond current opening switch made of p-silicon ( p-SOS)

    Science.gov (United States)

    Grekhov, I. V.; Lyublinskii, A. G.; Belyakova, E. I.

    2016-03-01

    The nanosecond semiconductor diode-based opening switch (SOS-diode) capable of switching currents with densities up to several tens of kiloamperes per cubic centimeter represents a p + p'Nn+ silicon structure fabricated by the deep simultaneous diffusion doping (to about 200 μm) of n-Si by Al and B from one side and P from the other. In the SOS mode, first a short pulse of forward current passes through the diode and then a fast-growing pulse of reverse voltage is applied. A resulting pulse of reverse current carries away injected holes and thereby forms a plasma front in the p' layer, which moves toward the p' N junction. When the hole concentration in the flow exceeds the dopant concentration in the p' layer, a space charge region arises in this layer, the resistivity of the diode increases sharply, and the current switches to a load connected parallel to the diode. Early results concerning an alternative configuration of the SOS diode are presented. Here, the diode was made by the rapid simultaneous diffusion of B and P from the opposite sides of a p-Si wafer to a depth of 60-80 μm. If a short pulse of forward current is passed through such a p + pn + structure and a pulse of reverse voltage is then applied, a plasma front arising in the p + region moves toward the p + p interface through the heavily doped (i.e., low-resistivity) p + region. Having crossed this interface, the front passes into a low-doped region, where the hole concentration in the flow becomes much higher than the dopant concentration and a space charge region causing the current to pass to the load forms at once. It is shown experimentally that, all other things being the same, the time of current breaking in the p-SOS-diode is roughly twice as short as in the conventional n-SOS-diode, switched currents are considerably lower, and the fabrication technique of p-SOS-diodes is much simpler. Ways of optimizing the design of the semiconductor structure of the p-SOS-diode to further raise the

  10. Effect of longitudinal applied magnetic field on the self-pinched critical current in intense electron beam diode

    Institute of Scientific and Technical Information of China (English)

    Liu Guo-Zhi; Huang Wen-Hua; Shao Hao; Xiao Ren-Zhen

    2006-01-01

    The effect of applied longitudinal magnetic field on the self-pinched critical current in the intense electron beam diode is discussed. The self-pinched critical current is derived and its validity is tested by numerical simulations. The results shows that an applied longitudinal magnetic field tends to increase the self-pinched critical current. Without the effect of anode plasma, the maximal diode current approximately equals the self-pinched critical current with the longitudinal magnetic field applied; when self-pinched occurs, the diode current approaches the self-pinched critical current.

  11. Crossed-beam superluminescent diode.

    Science.gov (United States)

    Vaissié, Laurent; Smolski, Oleg V; Johnson, Eric G

    2005-07-01

    We investigate a novel surface-emitting superluminescent diode configuration that uses two detuned grating outcouplers to suppress lasing. This device exhibits a shaped beam with a peak power of 1.5 W quasi-continuous wave with an 11 nm bandwidth centered on 970 nm.

  12. Thermal-Diode Sandwich Panel

    Science.gov (United States)

    Basiulis, A.

    1986-01-01

    Thermal diode sandwich panel transfers heat in one direction, but when heat load reversed, switches off and acts as thermal insulator. Proposed to control temperature in spacecraft and in supersonic missiles to protect internal electronics. In combination with conventional heat pipes, used in solar panels and other heat-sensitive systems.

  13. Spin-photon entangling diode

    DEFF Research Database (Denmark)

    Flindt, Christian; Sørensen, A. S.; Lukin, M. D.;

    2007-01-01

    We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

  14. Electrical and thermal finite element modeling of arc faults in photovoltaic bypass diodes.

    Energy Technology Data Exchange (ETDEWEB)

    Bower, Ward Isaac; Quintana, Michael A.; Johnson, Jay

    2012-01-01

    Arc faults in photovoltaic (PV) modules have caused multiple rooftop fires. The arc generates a high-temperature plasma that ignites surrounding materials and subsequently spreads the fire to the building structure. While there are many possible locations in PV systems and PV modules where arcs could initiate, bypass diodes have been suspected of triggering arc faults in some modules. In order to understand the electrical and thermal phenomena associated with these events, a finite element model of a busbar and diode was created. Thermoelectrical simulations found Joule and internal diode heating from normal operation would not normally cause bypass diode or solder failures. However, if corrosion increased the contact resistance in the solder connection between the busbar and the diode leads, enough voltage potentially would be established to arc across micron-scale electrode gaps. Lastly, an analytical arc radiation model based on observed data was employed to predicted polymer ignition times. The model predicted polymer materials in the adjacent area of the diode and junction box ignite in less than 0.1 seconds.

  15. Edge state and crisis in the Pierce diode

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, Pablo R.; Rempel, Erico L. [Institute of Aeronautical Technology (ITA) and World Institute for Space Environment Research (WISER), CTA/ITA/IEFM, Sao Jose dos Campos-SP 12228-900 (Brazil); Barroso, Joaquim J. [National Institute for Space Research (INPE) and World Institute for Space Environment Research (WISER), P. O. Box 515, Sao Jose dos Campos-SP 12227-010 (Brazil); Chian, Abraham C.-L. [National Institute for Space Research (INPE) and World Institute for Space Environment Research (WISER), P. O. Box 515, Sao Jose dos Campos-SP 12227-010 (Brazil); Observatoire de Paris, LESIA, CNRS, 92195 Meudon (France)

    2012-09-15

    We study the chaotic dynamics of the Pierce diode, a simple spatially extended system for collisionless bounded plasmas, focusing on the concept of edge of chaos, the boundary that separates transient from asymptotic dynamics. We fully characterize an interior crisis at the end of a periodic window, thereby showing direct evidence of the collision between a chaotic attractor, a chaotic saddle, and the edge of chaos, formed by a period-3 unstable periodic orbit and its stable manifold. The edge of chaos persists after the interior crisis, when the global attractor of the system increases its size in the phase space.

  16. X-Pinch in High-Current Diode

    Science.gov (United States)

    Bryunetkin, B. A.; Faenov, A. Ya.; Ivanenkov, G. V.; Khakhalin, S. Ya.; Mingaleev, A. R.; Pikuz, S. A.; Romanova, V. M.; Shelkovenko, T. A.; Skobelev, I. Yu.

    1994-03-01

    The review of X-pinch investigations in high current diode of BIN facility (250 kA, 100 ns) is presented. The main purposes were to investigate pinch forming processes and hot dense plasma properties. X-pinch is also considered as a source for multiple charged ions spectroscopy and for X-ray optics testing. The set of diagnostics applied in these experiments allowed us to investigate the pinch forming processes in different configurations of crossed wires loads. High spectral and space resolved measurements of plasma radiation in 1-200 Å range, absolute energy measurements and electron beam registration were provided. Plasma parameters were obtained from relative intensities and shapes of multiple charged ions spectral lines. Electron density of plasma with the temperature Te = 0.2-1 keV variated from 1023 cm-3 in hot spot to 1018 cm-3 during plasma expansion. In recombining plasma, an inversion of Al He-like ions levels population was registrated. Total radiation output of 0.5 mm pinch reached hundreds Joules in 2-100 Å range during 100 ns.

  17. ORGANIC LIGHT EMITTING DIODE (OLED

    Directory of Open Access Journals (Sweden)

    Aririguzo Marvis Ijeaku

    2015-09-01

    Full Text Available An Organic Light Emitting Diode (OLED is a device composed of an organic layer that emits lights in response to an electrical current. Organic light emitting diodes have advanced tremendously over the past decades. The different manufacturing processes of the OLED itself to several advantages over flat panel displays made with LCD technology which includes its light weight and flexible plastic substrates, wider viewing angles, improved brightness, better power efficiency and quicker response time. However, its drawbacks include shorter life span, poor color balance, poor outdoor performance, susceptibility to water damage etc.The application of OLEDs in electronics is on the increase on daily basics from cameras to cell phones to OLED televisions, etc. Although OLEDs provides prospects for thinner, smarter, lighter and ultraflexible electronics displays, however, due to high cost of manufacturing, it is not yet widely used.

  18. Quantum Noise in Laser Diodes

    Science.gov (United States)

    Giacobino, E.; Marin, F.; Bramati, A.; Jost, V.; Poizat, J. Ph.; Roch, J.-F.; Grangier, P.; Zhang, T.-C.

    1996-01-01

    We have investigated the intensity noise of single mode laser diodes, either free-running or using different types of line narrowing techniques at room temperature. We have measured an intensity squeezing of 1.2 dB with grating-extended cavity lasers and 1.4 dB with injection locked lasers (respectively 1.6 dB and 2.3 dB inferred at the laser output). We have observed that the intensity noise of a free-running nominally single mode laser diode results from a cancellation effect between large anti-correlated fluctuations of the main mode and of weak longitudinal side modes. Reducing the side modes by line narrowing techniques results in intensity squeezing.

  19. Megahertz organic/polymer diodes

    Science.gov (United States)

    Katz, Howard Edan; Sun, Jia; Pal, Nath Bhola

    2012-12-11

    Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

  20. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  1. Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    P. J. Carrington

    2011-01-01

    Full Text Available Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.

  2. Modeling and characterization of field-enhanced corona discharge in ozone-generator diode

    Science.gov (United States)

    Patil, Jagadish G.; Vijayan, T.

    2010-02-01

    Electric field enhanced corona plasma discharge in ozone generator diode of axial symmetry has been investigated and characterized in theory. The cathode K of diode is made of a large number of sharpened nozzles arranged on various radial planes on the axial mast and pervaded in oxygen gas inside the anode cup A, produces high fields over MV/m and aids in the formation of a corona plume of dense ozone cloud over the cathode surface. An r-z finite difference scheme has been devised and employed to numerically determine the potential and electric field distributions inside the diode. The analyses of cathode emissions revealed a field emission domain conformed to modified Child-Langmuir diode-current. Passage of higher currents (over μA) in shorter A-K gaps d gave rise to cathode heated plasma extending from the corona to Saha regimes depending on local temperature. Plasma densities of order 102-106 m-3 are predicted in these. For larger d however, currents are smaller and heating negligible and a negative corona favoring ozone formation is attained. High ozone yields about 20 per cent of oxygen input is predicted in this domain. The generator so developed will be applied to various important applications such as, purification of ambient air /drinking water, ozone therapy, and so on.

  3. High power coherent polarization locked laser diode.

    Science.gov (United States)

    Purnawirman; Phua, P B

    2011-03-14

    We have coherently combined a broad area laser diode array to obtain high power single-lobed output by using coherent polarization locking. The single-lobed coherent beam is achieved by spatially combining four diode emitters using walk-off crystals and waveplates while their phases are passively locked via polarization discrimination. While our previous work focused on coherent polarization locking of diode in Gaussian beams, we demonstrate in this paper, the feasibility of the same polarization discrimination for locking multimode beams from broad area diode lasers. The resonator is designed to mitigate the loss from smile effect by using retro-reflection feedback in the cavity. In a 980 nm diode array, we produced 7.2 W coherent output with M2 of 1.5x11.5. The brightness of the diode is improved by more than an order of magnitude.

  4. Electromagnetic wave analogue of electronic diode

    OpenAIRE

    Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

  5. Electromagnetic wave analogue of electronic diode

    OpenAIRE

    Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

  6. Physics and Applications of Laser Diode Chaos

    CERN Document Server

    Sciamanna, Marc

    2015-01-01

    An overview of chaos in laser diodes is provided which surveys experimental achievements in the area and explains the theory behind the phenomenon. The fundamental physics underpinning this behaviour and also the opportunities for harnessing laser diode chaos for potential applications are discussed. The availability and ease of operation of laser diodes, in a wide range of configurations, make them a convenient test-bed for exploring basic aspects of nonlinear and chaotic dynamics. It also makes them attractive for practical tasks, such as chaos-based secure communications and random number generation. Avenues for future research and development of chaotic laser diodes are also identified.

  7. Effects of radiation on laser diodes.

    Energy Technology Data Exchange (ETDEWEB)

    Phifer, Carol Celeste

    2004-09-01

    The effects of ionizing and neutron radiation on the characteristics and performance of laser diodes are reviewed, and the formation mechanisms for nonradiative recombination centers, the primary type of radiation damage in laser diodes, are discussed. Additional topics include the detrimental effects of aluminum in the active (lasing) volume, the transient effects of high-dose-rate pulses of ionizing radiation, and a summary of ways to improve the radiation hardness of laser diodes. Radiation effects on laser diodes emitting in the wavelength region around 808 nm are emphasized.

  8. Advances in high power semiconductor diode lasers

    Science.gov (United States)

    Ma, Xiaoyu; Zhong, Li

    2008-03-01

    High power semiconductor lasers have broad applications in the fields of military and industry. Recent advances in high power semiconductor lasers are reviewed mainly in two aspects: improvements of diode lasers performance and optimization of packaging architectures of diode laser bars. Factors which determine the performance of diode lasers, such as power conversion efficiency, temperature of operation, reliability, wavelength stabilization etc., result from a combination of new semiconductor materials, new diode structures, careful material processing of bars. The latest progress of today's high-power diode lasers at home and abroad is briefly discussed and typical data are presented. The packaging process is of decisive importance for the applicability of high-power diode laser bars, not only technically but also economically. The packaging techniques include the material choosing and the structure optimizing of heat-sinks, the bonding between the array and the heat-sink, the cooling and the fiber coupling, etc. The status of packaging techniques is stressed. There are basically three different diode package architectural options according to the integration grade. Since the package design is dominated by the cooling aspect, different effective cooling techniques are promoted by different package architectures and specific demands. The benefit and utility of each package are strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made. Modularity of package for special application requirements is an important developing tendency for high power diode lasers.

  9. Destructive Single-Event Effects in Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Campola, Michael J.; Wilcox, Edward P.; Phan, Anthony M.; Label, Kenneth A.

    2017-01-01

    In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.

  10. Materials for diode pumped solid state lasers

    Science.gov (United States)

    Chase, L. L.; Davis, L. E.; Krupke, W. F.; Payne, S. A.

    1991-07-01

    The advantages of semiconductor diode lasers and laser arrays as pump sources for solid state lasers are reviewed. The properties that are desirable in solid state laser media for various diode pumping applications are discussed, and the characteristics of several promising media are summarized.

  11. Temperature dependence of commercially available diode detectors.

    Science.gov (United States)

    Saini, Amarjit S; Zhu, Timothy C

    2002-04-01

    Temperature dependence of commercially available n- and p-type diodes were studied experimentally under both high instantaneous dose rate (pulsed) and low dose rate (continuous) radiation. The sensitivity versus temperature was measured at SSD = 80 or 100 cm, 10 x 10 cm2, and 5 cm depth in a 30 x 30 x 30 cm3 water phantom between 10 degrees C and 35 degrees C. The response was linear for all the diode detectors. The temperature coefficient (or sensitivity variation with temperature, svwt) was dose rate independent for preirradiated diodes. They were (0.30 +/- 0.01)%/degrees C, (0.36 +/- 0.03)%/degrees C, and (0.29 +/- 0.08)%/degrees C for QED p-type, EDP p-type, and Isorad n-type diodes, respectively. The temperature coefficient for unirradiated n-type diodes was different under low dose rate [(0.16 to 0.45)%/degrees C, continuous, cobalt] and high instantaneous dose rate [(0.07 +/- 0.02)%/degrees C, pulsed radiation]. Moreover, the temperature coefficient varies among individual diodes. Similarly, the temperature coefficient for a special unirradiated QED p-type diode was different under low dose rate (0.34%/degrees C, cobalt) and high instantaneous dose rate [(0.26 +/- 0.01)%/degrees C, pulsed radiation]. Sufficient preirradiation can eliminate dose rate dependence of the temperature coefficient. On the contrary, preirradiation cannot eliminate dose rate dependence of the diode sensitivity itself.

  12. Electromagnetic wave analogue of electronic diode

    CERN Document Server

    Shadrivov, Ilya V; Kivshar, Yuri S; Fedotov, Vassili A; Zheludev, Nikolay I

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by an extraordinary strong nonlinear wave propagation effect in the same way as electronic diode function is provided by a nonlinear current characteristic of a semiconductor junction. The effect exploited in this new electromagnetic diode is an intensity-dependent polarization change in an artificial chiral metamolecule. This microwave effect exceeds a similar optical effect previously observed in natural crystals by more than 12 orders of magnitude and a direction-dependent transmission that differing by a factor of 65.

  13. Laser diode package with enhanced cooling

    Science.gov (United States)

    Deri, Robert J.; Kotovsky, Jack; Spadaccini, Christopher M.

    2011-09-13

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  14. Hermetic diode laser transmitter module

    Science.gov (United States)

    Ollila, Jyrki; Kautio, Kari; Vahakangas, Jouko; Hannula, Tapio; Kopola, Harri K.; Oikarinen, Jorma; Sivonen, Matti

    1999-04-01

    In very demanding optoelectronic sensor applications it is necessary to encapsulate semiconductor components hermetically in metal housings to ensure reliable operation of the sensor. In this paper we report on the development work to package a laser diode transmitter module for a time- off-light distance sensor application. The module consists of a lens, laser diode, electronic circuit and optomechanics. Specifications include high acceleration, -40....+75 degree(s)C temperature range, very low gas leakage and mass-production capability. We have applied solder glasses for sealing optical lenses and electrical leads hermetically into a metal case. The lens-metal case sealing has been made by using a special soldering glass preform preserving the optical quality of the lens. The metal housings are finally sealed in an inert atmosphere by welding. The assembly concept to retain excellent optical power and tight optical axis alignment specifications is described. The reliability of the laser modules manufactured has been extensively tested using different aging and environmental test procedures. Sealed packages achieve MIL- 883 standard requirements for gas leakage.

  15. Adiabatic plasma buncher

    Energy Technology Data Exchange (ETDEWEB)

    Ferrario, M. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Frascati, Frascati, RM (Italy); Katsouleas, T.C. [Los Angeles Univ. of Southern California, Los Angeles, CA (United States); Serafini, L. [Istituto Nazionale di Fisica Nucleare, Milan (Italy); Ben Zvi, I. [Brookhaven National Laboratory, Upton, NY (United States)

    2000-07-01

    In this paper is presented a new scheme of injection into a plasma accelerator, aimed at producing a high quality beam while relaxing the demands on the bunch length of the injected beam. The beam dynamics in the injector, consisting of a high voltage pulsed photo-diode, is analyzed and optimized to produce a {lambda}{sub p}/20 long electron bunch at 2.5 MeV. This bunch is injected into a plasma wave in which it compresses down to {lambda}{sub p}/100 while simultaneously accelerating up to 250 MeV. This simultaneous bunching and acceleration of a high quality beam requires a proper combination of injection energy and injection phase. Preliminary results from simulations are shown to assess the potentials of the scheme.

  16. Anode Plasma Expansion in Pinch-Reflex Diodes.

    Science.gov (United States)

    1983-08-16

    the expansion. Prono et a12 have studied a charge-exchange mechanism to account for the large expansion velocity but this mechanism does not explain...1978). 2. D. S. Prono , H. Ishizuka, E. P. Lee, B. W. Stallard and W. C. Turner, J. App. Phys. 52, 3004 (1981). 3. S. A. Goldstein, D. W. Swain, G. R

  17. Cern DD4424 ROM Diode Matrix

    CERN Multimedia

    A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

  18. A Diode Matrix model M792

    CERN Multimedia

    A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

  19. Bilayer avalanche spin-diode logic

    Energy Technology Data Exchange (ETDEWEB)

    Friedman, Joseph S., E-mail: joseph.friedman@u-psud.fr; Querlioz, Damien [Institut d’Electronique Fondamentale, Univ. Paris-Sud, CNRS, 91405 Orsay (France); Fadel, Eric R. [Department of Materials Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Wessels, Bruce W. [Department of Electrical Engineering & Computer Science, Northwestern University, Evanston, IL 60208 (United States); Department of Materials Science & Engineering, Northwestern University, Evanston, IL 60208 (United States); Sahakian, Alan V. [Department of Electrical Engineering & Computer Science, Northwestern University, Evanston, IL 60208 (United States); Department of Biomedical Engineering, Northwestern University, Evanston, IL 60208 (United States)

    2015-11-15

    A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.

  20. Improved Thermoelectrically Cooled Laser-Diode Assemblies

    Science.gov (United States)

    Glesne, Thomas R.; Schwemmer, Geary K.; Famiglietti, Joe

    1994-01-01

    Cooling decreases wavelength and increases efficiency and lifetime. Two improved thermoelectrically cooled laser-diode assemblies incorporate commercial laser diodes providing combination of both high wavelength stability and broad wavelength tuning which are broadly tunable, highly stable devices for injection seeding of pulsed, high-power tunable alexandrite lasers used in lidar remote sensing of water vapor at wavelengths in vicinity of 727 nanometers. Provide temperature control needed to take advantage of tunability of commercial AlGaAs laser diodes in present injection-seeding application.

  1. Full-quantum light diode

    CERN Document Server

    Ghobadi, Roohollah

    2015-01-01

    Unidirectional light transport in one-dimensional nanomaterials at the quantum level is a crucial goal to achieve for upcoming computational devices. We here employ a full-quantum mechanical approach based on master equation to describe unidirectional light transport through a pair of two-level systems coupled to a one-dimensional waveguide. By comparing with published semi-classical results, we find that the nonlinearity of the system is reduced, thereby reducing also the unidirectional light transport efficiency. Albeit not fully efficient, we find that the considered quantum system can work as a light diode with an efficiency of approximately 60%. Our results may be used in quantum computation with classical and quantized light.

  2. Quantum noise in superluminescent diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yuvek, A.M.; Taylor, H.F.; Goldberg, L.; Weller, J.F.; Dandridge, A.

    1986-04-01

    Intensity noise in a superluminescent diode (SLD) has been studied over the frequency range from 100 Hz to 2 MHz. The ''1/F'' noise which dominates at low frequencies (<59 kHz) is superceded by a flat ''white noise'' spectrum at higher frequencies (> 500 5Hz). A more extensive investigation has been carried out in this higher frequency regime, where the intensity noise is assumed to result from quantum fluctuation effects. For a given SLD driving current, the excess noise power is found to be a linear function of photodetector current to the maximum observed level of 12 db. These results agree well with the behavior predicted by a quantum amplifier model for the SLD.

  3. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  4. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  5. Arbitrary waveform generator to improve laser diode driver performance

    Science.gov (United States)

    Fulkerson, Jr, Edward Steven

    2015-11-03

    An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

  6. High Power Diode Lasers Technology and Applications

    CERN Document Server

    Bachmann, Friedrich; Poprawe, Reinhart

    2007-01-01

    In a very comprehensive way this book covers all aspects of high power diode laser technology for materials processing. Basics as well as new application oriented results obtained in a government funded national German research project are described in detail. Along the technological chain after a short introduction in the second chapter diode laser bar technology is discussed regarding structure, manufacturing technology and metrology. The third chapter illuminates all aspects of mounting and cooling, whereas chapter four gives wide spanning details on beam forming, beam guiding and beam combination, which are essential topics for incoherently coupled multi-emitter based high power diode lasers. Metrology, standards and safety aspects are the theme of chapter five. As an outcome of all the knowledge from chapter two to four various system configurations of high power diode lasers are described in chapter six; not only systems focussed on best available beam quality but especially also so called "modular" set...

  7. Advanced laser diodes for sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    VAWTER,GREGORY A.; MAR,ALAN; CHOW,WENG W.; ALLERMAN,ANDREW A.

    2000-01-01

    The authors have developed diode lasers for short pulse duration and high peak pulse power in the 0.01--100.0 m pulsewidth regime. A primary goal of the program was producing up to 10 W while maintaining good far-field beam quality and ease of manufacturability for low cost. High peak power, 17 W, picosecond pulses have been achieved by gain switching of flared geometry waveguide lasers and amplifiers. Such high powers area world record for this type of diode laser. The light emission pattern from diode lasers is of critical importance for sensing systems such as range finding and chemical detection. They have developed a new integrated optical beam transformer producing rib-waveguide diode lasers with a symmetric, low divergence, output beam and increased upper power limits for irreversible facet damage.

  8. I-V characteristics of foilless diodes

    Institute of Scientific and Technical Information of China (English)

    Liu Guo-Zhi; Huang Wen-Hua; Yang Zhan-Feng

    2005-01-01

    Some physical characteristics of foilless diodes are obtained and analysed by numerical simulations. Relations between diode current andconfiguration parameters, i.e. diode voltage and external magnetic field, are investigated.Employing these relations and assuming that the external magnetic field is strong enough, the diode current can be approximately written as Ib=(7.5/x)(x+(0.81-x)/(1+0.7Ld2/δr))(γ0 2/3-1)3/2, in which Ld is the Anode-Cathode(AK) gap, Rc the outer radius of cathode, and Rp the radius of drifting tube; x=ln(Rp/Rc), δr=Rp- Rc. This expression is comparatively accurate for different configuration parameters and voltages; results obtained from this expression are consistent with that of numerical simulations within an error of 10%.

  9. Near infrared polymer light-emitting diodes

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong; YANG Jian; HOU Qiong; MO Yueqi; PENG Junbiao; CAO Yong

    2005-01-01

    High efficiency of near infrared polymer light-emitting diodes with bilayer structure was obtained. The diode structure is ITO/PEDOT/L1/L2/Ba/Al, where L1 is phenyl-substituted poly [p-phenylphenylene vinylene] derivative (P-PPV), L2 is 9,9-dioctylfluorene (DOF) and 4,7- bis(3-hexylthiophen)-2-yl-2,1,3-naphthothiadiazole (HDNT) copolymer (PFHDNT10). The electroluminescence (EL) spectrum of diodes from PFHDNT10 is at 750 nm located in the range of near infrared. The maximum external quantum efficiency is up to 2.1% at the current density of 35 mA/cm2. The improvement of the diode's performances was considered to be the irradiative excitons confined in the interface between L1 and L2 layers.

  10. Diode laser (980nm) cartilage reshaping

    Science.gov (United States)

    El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

    2011-03-01

    Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

  11. AlGaInN laser diode technology for defence, security and sensing applications

    Science.gov (United States)

    Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lucja; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

    2014-10-01

    The latest developments in AlGaInN laser diode technology are reviewed for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Gallium-nitride (GaN) blue laser diode is reported. High power operation of AlGaInN laser diodes is demonstrated with a single chip, AlGaInN laser diode `mini-array' with a common p-contact configuration at powers up to 2.5W cw at 410nm. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. GaN laser bars of up to 5mm with 20 emitters, mounted in a CS mount package, give optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.or.

  12. Phase Noise Reduction of Laser Diode

    Science.gov (United States)

    Zhang, T. C.; Poizat, J.-Ph.; Grelu, P.; Roch, J.-F.; Grangier, P.; Marin, F.; Bramati, A.; Jost, V.; Levenson, M. D.; Giacobino, E.

    1996-01-01

    Phase noise of single mode laser diodes, either free-running or using line narrowing technique at room temperature, namely injection-locking, has been investigated. It is shown that free-running diodes exhibit very large excess phase noise, typically more than 80 dB above shot-noise at 10 MHz, which can be significantly reduced by the above-mentioned technique.

  13. Interferometry and Holography With Diode Laser Light

    CERN Document Server

    Lunazzi, Jose Joaquin

    2016-01-01

    We made an interferometric Michelson type setup and a simple holographic setup to demonstrate the feasibility of interferometric and holographic techniques by means of a diode laser. The laser was made by using a common diode available as a penlight element (less than R$ 15,00 value) and a simple stabilized 110 VCA- 3 VCC power supply. Interference fringes and holograms of small objects where obtained very similar to those of a helium-neon laser based setup.

  14. Multiple and broad frequency response Gunn diodes

    Science.gov (United States)

    Pilgrim, N. J.; Macpherson, R. F.; Khalid, A.; Dunn, G. M.; Cumming, D. R. S.

    2009-10-01

    Gunn diodes, operating in transit time mode, are usually thought of as incapable of generating power at multiple frequencies or over a broad frequency range. In this paper, we report experimental results showing that these diodes can generate power at several frequencies and, using Monte Carlo simulations of both planar and vertical devices, we offer an explanation of how this unusual behaviour may come into being and suggest possible applications for this novel device.

  15. SiC Schottky diode electrothermal macromodel

    OpenAIRE

    Masana Nadal, Francisco

    2010-01-01

    This paper presents a SiC Schottky diode model including static, dynamic and thermal features implemented as separate parameterized blocks constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for each block are easy to extract, even from readily available diode data sheet information. The model complexity is low thus allowing reasonably long simulation times to cope with the rather slow self heating process and yet accurate enough for practical purposes.

  16. Bypass diode for a solar cell

    Science.gov (United States)

    Rim, Seung Bum; Kim, Taeseok; Smith, David D.; Cousins, Peter J.

    2012-03-13

    Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

  17. Varactor diodes for millimeter and submillimeter wavelengths

    Science.gov (United States)

    Rizzi, Brian J.; Hesler, Jeffrey L.; Dossal, Hasan; Crowe, Thomas W.

    1992-01-01

    Whisker-contacted GaAs Schottky barrier varactor diodes are the most common high-frequency multiplier element in use today. They are inherently simple devices that have very high frequency response and have been used to supply local oscillator power for Schottky heterodyne receivers to frequencies approaching 700 GHz. This paper discusses the development of improved varactor diode technology for space based applications at millimeter and submillimeter wavelengths.

  18. Chlorine Analysis by Diode Laser Atomic Absorption Spectrometry

    Institute of Scientific and Technical Information of China (English)

    Joachim Koch; Aleksandr Zybin; Kay Niemax

    2000-01-01

    The general characteristics of Diode Laser Absorption Spectrometry (DLAAS) in low pressure plasmas particulary with respect to the detection of non-metals are comprehensively recapitulated and discussed. Furthermore, a detector, which is based on DLAAS in a microwave-induced low pressure plasma as an alternative technique for halogene-specific analysis of volatile compounds and polymeric matrices is described. The analytical capability of the technique is demonstrated on the chlorine-specific analysis of ablated polymer fragments as well as gas chromatographically separated hydrocarbons. Since the measurements were carried out by means of a balanced-heterodyne detection scheme, different technical noise contributions, such as laser excess and RAM noise could efficiently be suppressed and the registered absorption was limited only by the principal shot noise. Thus, in the case of the polymer analysis a chlorine-specific absolute detection limit of 10 pg could be achieved. Furthermore, fundamental investigations concerning the influence of hydrocarbons on the dissociation capability of the microwave induced plasma were performed. For this purpose, the carbon-, chlorine-and hydrogen-specific stoichiometry of the compounds were empirically determined. Deviations from the exspected proportions were found to be insignificant, implying the possibility of internal standardization relative to the response of a reference sample.

  19. Dynamics of a relativistic electron beam in a high-current diode with a knife-edge cathode

    Science.gov (United States)

    Babykin, V. M.; Gordeev, A. V.; Golovin, G. T.; Korolev, V. D.; Kopchikov, A. V.; Tulupov, M. V.; Chernenko, A. S.; Shuvaev, V. Iu.

    1991-09-01

    The generation of a 130-kA electron beam with a pulse width of 60 ns is investigated experimentally and analytically. In particular, attention is given to the volt-ampere characteristics of knife-edge cathodes of different geometries, angular scatter dynamics, and beam structure. A study of the relativistic electron beam dynamics shows that diode operation in these experiments can be approximated by a formula allowing for the finite thickness of the knife-edge cathode and for plasma and ion motion in the diode gap.

  20. Mutual phase locking of a coupled laser diode-Gunn diode pair

    OpenAIRE

    Izadpanah, S.H; Rav-Noy, Z.; Mukai, S.; Margalit, S.; Yariv, Amnon

    1984-01-01

    Mutual phase locking has been achieved through series connection of a semiconductor laser and a Gunn diode oscillator. Experimental results obtained demonstrate a mutual interaction between the two oscillators which results in a short term Gunn diode oscillator stability and improved spectral purity of its output. We also observe a narrowing of laser pulses and an improvement in regularity.

  1. Performance of the cold powered diodes and diode leads in the main magnets of the LHC

    CERN Document Server

    Willering, G P; Bajko, M; Bednarek, M; Bottura, L; Charifoulline, Z; Dahlerup-Petersen, K; Dib, G; D'Angelo, G; Gharib, A; Grand-Clement, L; Izquierdo Bermudez, S; Prin, H; Roger, V; Rowan, S; Savary, F; Tock, J-Ph; Verweij, A

    2015-01-01

    During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the co...

  2. Inductively Coupled Plasma-Induced Etch Damage of GaN p-n Junctions

    Energy Technology Data Exchange (ETDEWEB)

    SHUL,RANDY J.; ZHANG,LEI; BACA,ALBERT G.; WILLISON,CHRISTI LEE; HAN,JUNG; PEARTON,S.J.; REN,F.

    1999-11-03

    Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl{sub 2}/BCl{sub 3}/Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions ({le} 500 W), pressures {ge}2 mTorr, and at ion energies below approximately -275 V.

  3. p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes

    Science.gov (United States)

    Wensheng, Wei; Chunxi, Zhang

    2016-06-01

    Using p+-type crystalline Si with n+-type nanocrystalline Si (nc-Si) and n+-type crystalline Si with p+-type nc-Si mosaic structures as electrodes, a type of power diode was prepared with epitaxial technique and plasma-enhanced chemical vapor deposition (PECVD) method. Firstly, the basic p+-n--n+-type Si diode was fabricated by epitaxially growing p+- and n+-type layers on two sides of a lightly doped n--type Si wafer respectively. Secondly, heavily phosphorus-doped Si film was deposited with PECVD on the lithography mask etched p+-type Si side of the basic device to form a component with mosaic anode. Thirdly, heavily boron-doped Si film was deposited on the etched n+-type Si side of the second device to form a diode with mosaic anode and mosaic cathode. The images of high resolution transmission electronic microscope and patterns of X-ray diffraction reveal nanocrystallization in the phosphorus- and boron-deposited films. Electrical measurements such as capacitance-voltage relation, current-voltage feature and reverse recovery waveform were carried out to clarify the performance of prepared devices. The important roles of (n-)Si/(p+)nc-Si and (n-)Si/(n+)nc-Si junctions in the static and dynamic conduction processes in operating diodes were investigated. The performance of mosaic devices was compared to that of a basic one. Project supported by the National Natural Science Foundation of China (No. 61274006).

  4. Analysis of the reverse recovery oscillation of superjunction MOSFET body diode

    Science.gov (United States)

    Xue, Peng; Fu, Guicui

    2017-03-01

    The voltage and current oscillations occasionally occur during the reverse recovery transient of the superjunction MOSFET body diode. This paper identifies the unique reverse recovery oscillation characteristics of the superjunction MOSFET body diode. Base on the experimental investigation and theoretical analysis, the various reverse recovery oscillation mechanisms are clarified. At first, with a discrete 650 V/47 A superjunction MOSFET utilized, the high-frequency and low-frequency oscillation characteristics during the reverse recovery transient are obtained by the double-pulse test. After the theoretical analysis, it is found that the superjunction MOSFET body diode has various oscillation mechanisms depending on its drift region injection level. Under high-level injection condition, the high-frequency oscillation occurs due to the plasma extraction transient-time (PETT) effect. Under low-level injection condition, the body diode's snappy reverse recovery results in the low-frequency LC oscillation. In the end of the paper, the oscillation behaviors under both high and low level injection conditions are reproduced by the mixed-mode numerical simulation, the simulation results validate the proposed oscillation mechanisms.

  5. Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

    Science.gov (United States)

    Li, Yun; Su, Ping; Yang, Zhimei; Ma, Yao; Gong, Min

    2016-12-01

    The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at EC-0.31 eV and EC-0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

  6. Tunable diode laser control by a stepping Michelson interferometer

    Energy Technology Data Exchange (ETDEWEB)

    Valentin, A.; Nicolas, C.; Henry, L.; Mantz, A.W.

    1987-01-01

    A tunable diode laser beam is sent through a Michelson interferometer and is locked to a fringe of the diode laser interferometer pattern by controlling the diode laser polarization current. The path difference change of the Michelson interferometer is controlled step by step by a stabilized He--Ne red laser. When the interferometer path differences increases or decreases, the polarization current of the diode is forced to change in order to preserve the interference order of the diode beam. At every step the diode frequency is accurately fixed and its phase noise significantly reduced.

  7. SiC-based Schottky diode gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Hunter, G.W.; Neudeck, P.G.; Chen, L.Y. [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center; Knight, D. [Cortez/NASA Lewis Research Center, Cleveland, OH (United States); Liu, C.C.; Wu, Q.H. [Electronics Design Center, Case Western Reserve Univ., Cleveland, OH (United States)

    1998-08-01

    Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor array for versatile high temperature gas sensing applications. (orig.) 6 refs.

  8. SiC-Based Schottky Diode Gas Sensors

    Science.gov (United States)

    Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai

    1997-01-01

    Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

  9. Plasma turbulence

    Energy Technology Data Exchange (ETDEWEB)

    Horton, W. [Univ. of Texas, Austin, TX (United States). Inst. for Fusion Studies; Hu, G. [Globalstar LP, San Jose, CA (United States)

    1998-07-01

    The origin of plasma turbulence from currents and spatial gradients in plasmas is described and shown to lead to the dominant transport mechanism in many plasma regimes. A wide variety of turbulent transport mechanism exists in plasmas. In this survey the authors summarize some of the universally observed plasma transport rates.

  10. High-current long-duration uniform electron beam generation in a diode with multicapillary carbon-epoxy cathode

    Energy Technology Data Exchange (ETDEWEB)

    Queller, T.; Gleizer, J. Z.; Krasik, Ya. E. [Physics Department, Technion, Haifa 32000 (Israel)

    2013-09-28

    The results of reproducibly generating an electron beam with a current density of up to 5 kA/cm{sup 2}, without the cathode-anode gap being shorted by the plasma formed inside the cathode carbon-epoxy capillaries, in a ∼350 kV, ∼600 ns diode, with and without an external guiding magnetic field, are presented. The cathode sustained hundreds of pulses without degradation of its emission properties. Time- and space-resolved emissions of the plasma and spectroscopy analyses were used to determine the cathode plasma's density, temperature, and expansion velocity.

  11. High-current long-duration uniform electron beam generation in a diode with multicapillary carbon-epoxy cathode

    Science.gov (United States)

    Queller, T.; Gleizer, J. Z.; Krasik, Ya. E.

    2013-09-01

    The results of reproducibly generating an electron beam with a current density of up to 5 kA/cm2, without the cathode-anode gap being shorted by the plasma formed inside the cathode carbon-epoxy capillaries, in a ˜350 kV, ˜600 ns diode, with and without an external guiding magnetic field, are presented. The cathode sustained hundreds of pulses without degradation of its emission properties. Time- and space-resolved emissions of the plasma and spectroscopy analyses were used to determine the cathode plasma's density, temperature, and expansion velocity.

  12. A study of the coupling between LO phonons and plasmons in InP p-i-n diodes

    Science.gov (United States)

    Thao, Dinh Nhu

    2017-03-01

    This paper reports a study investigating the coupling between longitudinal optical (LO) phonons and plasmons in InP p-i-n diodes by a numerical simulation. A significant change is observed in the Fourier transform spectra of transient electric field when taking the coupling into account. The findings show two separate peaks instead of a single plasma peak as for non-coupling case. In addition, the bulk-like dispersion relations of the frequencies of those two peaks on the carrier density are found. Therefore, it is proposed that those behaviors manifest the LO phonon-plasmon coupling in the diodes. Also, there is evidence of the peak clipping by the diode itself, a phenomenon not being seen in the bulk InP semiconductor.

  13. Effect of a transverse magnetic field on the generation of electron beams in the gas-filled diode

    Science.gov (United States)

    Baksht, E. H.; Burachenko, A. G.; Erofeev, M. V.; Kostyrya, I. D.; Lomaev, M. I.; Rybka, D. V.; Tarasenko, V. F.

    2008-06-01

    The effect of a transverse magnetic field (0.080 and 0.016 T) on generation of an electron beam in the gas-filled diode is experimentally investigated. It is shown that, at voltage U = 25 kV across the diode and a low helium pressure (45 Torr), the transverse magnetic field influences the beam current amplitude behind a foil and its distribution over the foil cross section. At elevated pressures and under the conditions of ultrashort avalanche electron beam formation in helium, nitrogen, and air, the transverse magnetic field (0.080 and 0.016 T) has a minor effect on the amplitude and duration of the beam behind the foil. It is established that, when the voltage of the pulse generator reaches several hundreds of kilovolts, some runaway electrons (including the electrons from the discharge plasma near the cathode) are incident on the side walls of the diode.

  14. Diode-pumped laser altimeter

    Science.gov (United States)

    Welford, D.; Isyanova, Y.

    1993-01-01

    TEM(sub 00)-mode output energies up to 22.5 mJ with 23 percent slope efficiencies were generated at 1.064 microns in a diode-laser pumped Nd:YAG laser using a transverse-pumping geometry. 1.32-micron performance was equally impressive at 10.2 mJ output energy with 15 percent slope efficiency. The same pumping geometry was successfully carried forward to several complex Q-switched laser resonator designs with no noticeable degradation of beam quality. Output beam profiles were consistently shown to have greater than 90 percent correlation with the ideal TEM(sub 00)-order Gaussian profile. A comparison study on pulse-reflection-mode (PRM), pulse-transmission-mode (PTM), and passive Q-switching techniques was undertaken. The PRM Q-switched laser generated 8.3 mJ pulses with durations as short as 10 ns. The PTM Q-switch laser generated 5 mJ pulses with durations as short as 5 ns. The passively Q-switched laser generated 5 mJ pulses with durations as short as 2.4 ns. Frequency doubling of both 1.064 microns and 1.32 microns with conversion efficiencies of 56 percent in lithium triborate and 10 percent in rubidium titanyl arsenate, respectively, was shown. Sum-frequency generation of the 1.064 microns and 1.32 microns radiations was demonstrated in KTP to generate 1.1 mJ of 0.589 micron output with 11.5 percent conversion efficiency.

  15. Plasma harmonics

    CERN Document Server

    Ganeev, Rashid A

    2014-01-01

    Preface; Why plasma harmonics? A very brief introduction Early stage of plasma harmonic studies - hopes and frustrations New developments in plasma harmonics studies: first successes Improvements of plasma harmonics; Theoretical basics of plasma harmonics; Basics of HHG Harmonic generation in fullerenes using few-cycle pulsesVarious approaches for description of observed peculiarities of resonant enhancement of a single harmonic in laser plasmaTwo-colour pump resonance-induced enhancement of odd and even harmonics from a tin plasmaCalculations of single harmonic generation from Mn plasma;Low-o

  16. Destructive Single-Event Failures in Schottky Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Gigliuto, Robert A.; Wilcox, Edward P.; Phan, Anthony M.; Kim, Hak; Chen, Dakai; LaBel, Kenneth A.

    2014-01-01

    This presentation contains test results for destructive failures in DC-DC converters. We have shown that Schottky diodes are susceptible to destructive single-event effects. Future work will be completed to identify parameter that determines diode susceptibility.

  17. DC characteristics of the SiC Schottky diodes

    National Research Council Canada - National Science Library

    W Janke; A Hapka; M Oleksy

    2011-01-01

      DC characteristics of the SiC Schottky diodes The isothermal and non-isothermal characteristics of silicon carbide Schottky diodes in the wide range of currents and ambient temperatures are investigated in this paper...

  18. Stirling-Cycle Cooling For Tunable Diode Laser

    Science.gov (United States)

    Durso, Santo S.; May, Randy D.; Tuchscherer, Matthew A.; Webster, Christopher R.

    1991-01-01

    Miniature Stirling-cycle cooler effective in continously cooling PbSnTe tunable diode laser to stable operating temperature near 80 K. Simplifies laboratory diode-laser spectroscopy and instruments for use aboard aircraft and balloons.

  19. Logarithmic current electrometer using light emitting diodes

    Science.gov (United States)

    Acharya, Y. B.; Aggarwal, A. K.

    1996-02-01

    The limit of low current measurement using logarithmic current to voltage converter is improved by 6 - 7 orders of magnitude with the use of diodes of large band gap as compared with silicon diodes. Low cost commercially available light emitting diodes (LEDs) have been used for this purpose. A theoretical study and experimental measurement of device constant and reverse saturation currents of the whole class of commercially available LEDs has been carried out. A circuit has been developed which makes use of a new technique for temperature compensation and its performance is compared with the technique in common use. The performance of the amplifier is found to be stable in the temperature range 5 - 600957-0233/7/2/005/img5 for both polarity of signals from 0957-0233/7/2/005/img6 to 0957-0233/7/2/005/img7 A.

  20. Thermal diode made by nematic liquid crystal

    Energy Technology Data Exchange (ETDEWEB)

    Melo, Djair, E-mail: djfmelo@gmail.com [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Fernandes, Ivna [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Moraes, Fernando [Departamento de Física, CCEN, Universidade Federal da Paraíba, Caixa Postal 5008, 58051-900, João Pessoa, PB (Brazil); Departamento de Física, Universidade Federal Rural de Pernambuco, 52171-900 Recife, PE (Brazil); Fumeron, Sébastien [Institut Jean Lamour, Université de Lorraine, BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre les Nancy (France); Pereira, Erms [Escola Politécnica de Pernambuco, Universidade de Pernambuco, Rua Benfíca, 455, Madalena, 50720-001 Recife, PE (Brazil)

    2016-09-07

    This work investigates how a thermal diode can be designed from a nematic liquid crystal confined inside a cylindrical capillary. In the case of homeotropic anchoring, a defect structure called escaped radial disclination arises. The asymmetry of such structure causes thermal rectification rates up to 3.5% at room temperature, comparable to thermal diodes made from carbon nanotubes. Sensitivity of the system with respect to the heat power supply, the geometry of the capillary tube and the molecular anchoring angle is also discussed. - Highlights: • An escaped radial disclination as a thermal diode made by a nematic liquid crystal. • Rectifying effects comparable to those caused by carbon and boron nitride nanotubes. • Thermal rectification increasing with radius and decreasing with height of the tube. • Asymmetric BCs cause rectification from the spatial asymmetry produced by the escape. • Symmetric BCs provide rectifications smaller than those yields by asymmetric BCs.

  1. Drivers for High Power Laser Diodes

    Institute of Scientific and Technical Information of China (English)

    Yankov P; Todorov D; Saramov E

    2006-01-01

    During the last year the high power laser diodes jumped over the 1 kW level of CW power for a stack,and the commercial 1 cm bars reached 100 W output optical power at the standard wavelengths around 800 nm and 980 nm. The prices are reaching the industry acceptable levels. All Nd:YAG and fiber industrial lasers manufacturers have developed kW prototypes. Those achievements have set new requirements for the power supplies manufactuers-high and stable output current, and possibilities for fast control of the driving current, keeping safe the expensive laser diode. The fast switching frequencies also allow long range free space communications and optical range finding. The high frequencies allow the design of a 3D laser radar with high resolution and other military applications. The prospects for direct laser diode micro machining are also attractive.

  2. Deterministic polarization chaos from a laser diode

    CERN Document Server

    Virte, Martin; Thienpont, Hugo; Sciamanna, Marc

    2014-01-01

    Fifty years after the invention of the laser diode and fourty years after the report of the butterfly effect - i.e. the unpredictability of deterministic chaos, it is said that a laser diode behaves like a damped nonlinear oscillator. Hence no chaos can be generated unless with additional forcing or parameter modulation. Here we report the first counter-example of a free-running laser diode generating chaos. The underlying physics is a nonlinear coupling between two elliptically polarized modes in a vertical-cavity surface-emitting laser. We identify chaos in experimental time-series and show theoretically the bifurcations leading to single- and double-scroll attractors with characteristics similar to Lorenz chaos. The reported polarization chaos resembles at first sight a noise-driven mode hopping but shows opposite statistical properties. Our findings open up new research areas that combine the high speed performances of microcavity lasers with controllable and integrated sources of optical chaos.

  3. Optical communications. V - Light emitting diodes /LED/

    Science.gov (United States)

    Best, S. W.

    1980-10-01

    The process of assembling diode chips is discussed, along with their application in optical communications. Metal plating is performed with an evaporation technique using primarily AuGe on the back side and Al or AuZn on the front side. The assembling of LED-chips with metal casings is illustrated. The chip is mounted on a flat bottom plate and electrical contact is established by means of an alloying or adhesion procedure. A glass fiber can be attached to the diode and then fitted with a casing, or the diode can be assembled with a metal cap and a lense, or with an open cap that is sealed with a clear synthetic resin plastic. The typical emission spectra of an LED and a semiconductor laser are compared. Limitations in the operation of an LED in a photoconductor are examined, taking into account spectral line width and radiated power criteria.

  4. Diode laser and endoscopic laser surgery.

    Science.gov (United States)

    Sullins, Kenneth E

    2002-05-01

    Two functionally important differences exist between the diode laser and the carbon dioxide (CO2) laser (used more commonly in small animal surgery). Diode laser energy is delivered through a quartz fiber instead of being reflected through an articulated arm or waveguide. Quartz fibers are generally more flexible and resilient than waveguides and can be inserted through an endoscope for minimally invasive procedures. Laser-tissue interaction is the other significant difference. The CO2 laser is completely absorbed by water, which limits the effect to visible tissue. The diode wavelength is minimally absorbed by water and may affect tissue as deep as 10 mm below the surface in the free-beam mode. With proper respect for the tissue effect, these differences can be used to the advantage of the patient.

  5. Diode laser based light sources for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin;

    2013-01-01

    Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode...... imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications....

  6. Semiconductor diode characterization for total skin electron irradiation.

    Science.gov (United States)

    Madrid González, O A; Rivera Montalvo, T

    2014-01-01

    In this paper, a semiconductor diode characterization was performed. The diode characterization was completed using an electron beam with 4 MeV of energy. The semiconductor diode calibration used irradiation with an electron beam in an ion chamber. "In vivo" dosimetry was also conducted. The dosimetry results revealed that the semiconductor diode was a good candidate for use in the total skin electron therapy (TSET) treatment control.

  7. Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

    Energy Technology Data Exchange (ETDEWEB)

    Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

    2000-04-01

    Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

  8. Investigation of radial temperature gradients in diode pumped alkali lasers using tunable diode laser absorption spectroscopy

    Science.gov (United States)

    Fox, Charles D.; Perram, Glen P.

    2012-03-01

    Heat loads in Diode Pumped Alkali Lasers (DPAL) have been investigated using a diode laser to probe the radial dependence of the absorbance. A TiS pump laser heats the medium in a T=50-100°C cesium heat pipe with 5 Torr nitrogen used for quenching. A tunable diode laser probes the spectral absorbance of the cesium cell. Local alkali concentration, temperature, and saturation broadening modify Voigt lineshapes in the wing of the hyperfine split lines. The temperature within the pumped volume exceeds the wall temperature by almost 200 C.

  9. High-quality distributed Bragg reflectors for resonant-cavity light-emitting diode applications

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S.; Naranjo, F.B.; Calle, F.; Sanchez-Garcia, M.A.; Calleja, E. [ISOM, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Vennegues, P. [CHREA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France)

    2002-08-16

    Efficient distributed Bragg reflectors based on Al{sub x}Ga{sub 1} {sub -} {sub x}N/GaN multilayer stacks have been grown by plasma-assisted molecular-beam epitaxy on GaN/Al{sub 2}O{sub 3} templates. The final goal is to incorporate these reflectors as bottom mirrors in a backside (sapphire) resonant-cavity light-emitting diode at 510 nm. The reflectors have been characterised by atomic force microscopy, high-resolution X-ray diffraction and high-resolution transmission electron microscopy. Reflectivity measurements have also been performed, obtaining values between 30% and 50%, depending on the Al content used. The incorporation of the Al{sub x}Ga{sub 1} {sub -} {sub x}N/GaN Bragg reflector as bottom mirror in a RCLED structure improves the output power by a factor of 12 compared with conventional light-emitting diodes. (Abstract Copyright[2002], Wiley Periodicals, Inc.)

  10. Diode lasers and photonic integrated circuits

    CERN Document Server

    Coldren, Larry A; Mashanovitch, Milan L

    2011-01-01

    Diode Lasers and Photonic Integrated Circuits, Second Edition provides a comprehensive treatment of optical communication technology, its principles and theory, treating students as well as experienced engineers to an in-depth exploration of this field. Diode lasers are still of significant importance in the areas of optical communication, storage, and sensing. Using the the same well received theoretical foundations of the first edition, the Second Edition now introduces timely updates in the technology and in focus of the book. After 15 years of development in the field, this book wil

  11. Phase-change radiative thermal diode

    CERN Document Server

    Ben-Abdallah, Philippe

    2013-01-01

    A thermal diode transports heat mainly in one preferential direction rather than in the opposite direction. This behavior is generally due to the non-linear dependence of certain physical properties with respect to the temperature. Here we introduce a radiative thermal diode which rectifies heat transport thanks to the phase transitions of materials. Rectification coefficients greater than 70% and up to 90% are shown, even for small temperature differences. This result could have important applications in the development of futur contactless thermal circuits or in the conception of radiative coatings for thermal management.

  12. Planar jumping-drop thermal diodes

    Science.gov (United States)

    Boreyko, Jonathan B.; Zhao, Yuejun; Chen, Chuan-Hua

    2011-12-01

    Phase-change thermal diodes rectify heat transport much more effectively than solid-state ones, but are limited by either the gravitational orientation or one-dimensional configuration. Here, we report a planar phase-change diode scalable to large areas with an orientation-independent diodicity of over 100, in which water/vapor is enclosed by parallel superhydrophobic and superhydrophilic plates. The thermal rectification is enabled by spontaneously jumping dropwise condensate which only occurs when the superhydrophobic surface is colder than the superhydrophilic surface.

  13. An all-silicon passive optical diode.

    Science.gov (United States)

    Fan, Li; Wang, Jian; Varghese, Leo T; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao

    2012-01-27

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.

  14. Investigation of MIM Diodes for RF Applications

    KAUST Repository

    Khan, Adnan

    2015-05-01

    Metal Insulator Metal (MIM) diodes that work on fast mechanism of tunneling have been used in a number of very high frequency applications such as (Infra-Red) IR detectors and optical Rectennas for energy harvesting. Their ability to operate under zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF use is the requirement of a very thin oxide layer essential for the tunneling operation that requires sophisticated nano-fabrication processes. Another issue is that the reliability and stable performance of MIM diodes is highly dependent on the surface roughness of the metallic electrodes. Finally, comprehensive RF characterization has not been performed for MIM diodes reported in the literature, particularly from the perspective of their integration with antennas as well as their rectification abilities. In this thesis, various metal deposition methods such as sputtering, electron beam evaporation, and Atomic Layer Deposition (ALD) are compared in pursuit of achieving low surface roughness. It is worth mentioning here that MIM diodes realized through ALD method have been presented for the first time in this thesis. Amorphous metal alloy have also been investigated in terms of their low surface roughness. Zinc-oxide has been investigated for its suitability as a thin dielectric layer for MIM diodes. Finally, comprehensive RF characterization of MIM diodes has been performed in two ways: 1) by standard S-parameter methods, and 2) by investigating their rectification ability under zero bias operation. It is concluded from the Atomic Force Microscopy (AFM) imaging that surface roughness as low as sub 1 nm can be achieved reliably from crystalline metals such as copper and platinum. This value is comparable to surface roughness achieved from amorphous alloys, which are non

  15. Thermal diode made by nematic liquid crystal

    Science.gov (United States)

    Melo, Djair; Fernandes, Ivna; Moraes, Fernando; Fumeron, Sébastien; Pereira, Erms

    2016-09-01

    This work investigates how a thermal diode can be designed from a nematic liquid crystal confined inside a cylindrical capillary. In the case of homeotropic anchoring, a defect structure called escaped radial disclination arises. The asymmetry of such structure causes thermal rectification rates up to 3.5% at room temperature, comparable to thermal diodes made from carbon nanotubes. Sensitivity of the system with respect to the heat power supply, the geometry of the capillary tube and the molecular anchoring angle is also discussed.

  16. Laser diode initiated detonators for space applications

    Science.gov (United States)

    Ewick, David W.; Graham, J. A.; Hawley, J. D.

    1993-01-01

    Ensign Bickford Aerospace Company (EBAC) has over ten years of experience in the design and development of laser ordnance systems. Recent efforts have focused on the development of laser diode ordnance systems for space applications. Because the laser initiated detonators contain only insensitive secondary explosives, a high degree of system safety is achieved. Typical performance characteristics of a laser diode initiated detonator are described in this paper, including all-fire level, function time, and output. A finite difference model used at EBAC to predict detonator performance, is described and calculated results are compared to experimental data. Finally, the use of statistically designed experiments to evaluate performance of laser initiated detonators is discussed.

  17. External cavity diode laser around 657 nm

    Institute of Scientific and Technical Information of China (English)

    Desheng Lǖ (吕德胜); Kaikai Huang (黄凯凯); Fengzhi Wang (王凤芝); DonghaiYang (杨东海)

    2003-01-01

    Operating a laser diode in an external cavity, which provides frequency-selective feedback, is a very effective method to tune the laser frequency to a range far from its free running frequency. For the Ca atomic Ramsey spectroscopy experiment, we have constructed a 657-nm laser system based on the LittmanMetcalf configuration with a 660-nm commercial laser diode. Continuously 10-GHz tuning range was achieved with about 100-kHz spectral linewidth, measured with beat-note spectrum of two identical laser systems.

  18. Linear variable voltage diode capacitor and adaptive matching networks

    NARCIS (Netherlands)

    Larson, L.E.; De Vreede, L.C.N.

    2006-01-01

    An integrated variable voltage diode capacitor topology applied to a circuit providing a variable voltage load for controlling variable capacitance. The topology includes a first pair of anti-series varactor diodes, wherein the diode power-law exponent n for the first pair of anti-series varactor di

  19. Linear variable voltage diode capacitor and adaptive matching networks

    NARCIS (Netherlands)

    Larson, L.E.; De Vreede, L.C.N.

    2006-01-01

    An integrated variable voltage diode capacitor topology applied to a circuit providing a variable voltage load for controlling variable capacitance. The topology includes a first pair of anti-series varactor diodes, wherein the diode power-law exponent n for the first pair of anti-series varactor

  20. A 640 GHz Planar-Diode Fundamental Mixer/Receiver

    Science.gov (United States)

    Siegel, P.; Mehdi, I.; Dengler, R.; Lee, T.; Humphrey, D.; Pease, A.

    1998-01-01

    The design and performance of a 640 GHz solid-state receiver using a fundamental planar-Schottky-diode mixer, InP Gunn diode oscillator, whisker-contacted Schottky-varactor-diode sextupler and folded-Fabry-Perot diplexer are reported.

  1. Dusty plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Fortov, Vladimir E; Khrapak, Aleksei G; Molotkov, Vladimir I; Petrov, Oleg F [Institute for High Energy Densities, Associated Institute for High Temperatures, Russian Academy of Sciences, Moscow (Russian Federation); Khrapak, Sergei A [Max-Planck-Institut fur Extraterrestrische Physik, Garching (Germany)

    2004-05-31

    The properties of dusty plasmas - low-temperature plasmas containing charged macroparticles - are considered. The most important elementary processes in dusty plasmas and the forces acting on dust particles are investigated. The results of experimental and theoretical investigations of different states of strongly nonideal dusty plasmas - crystal-like, liquid-like, gas-like - are summarized. Waves and oscillations in dusty plasmas, as well as their damping and instability mechanisms, are studied. Some results on dusty plasma investigated under microgravity conditions are presented. New directions of experimental research and potential applications of dusty plasmas are discussed. (reviews of topical problems)

  2. Multicapillary cathode controlled by a ferroelectric plasma source

    Science.gov (United States)

    Gleizer, J. Z.; Hadas, Y.; Krasik, Ya. E.

    2008-06-01

    We present results of high-current microsecond and sub-microsecond duration electron beam generation in a ~200 kV diode with a multicapillary dielectric cathode (MCDC) assisted by a ferroelectric plasma source (FPS). Electron beam current densities are achieved up to 40 A/cm2. It was shown that the operation of the MCDC is determined by the parameters of the plasma flow generated by the FPS. Also, it was found that the high resistivity of the plasma produced inside the capillaries allows effective de-coupling of individual capillary plasma discharges which results in uniform electron beam generation.

  3. Final report for EDI energy conservation with diode light; Slutrapport for EDI energibesparelser med diodelys

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2006-07-01

    The aim of this project has been to develop technological knowledge and a competence platform for utilization of new light emitting diode technology for general lighting purposes. Furthermore the project has aimed at developing a 3 W light diode bulb to replace 15-20 W filament bulbs and halogen spotlights, and thereby demonstrating a large energy conservation potential in the use of LED technology for lighting purposes. (BA)

  4. Electronically controlled heat sink for high-power laser diodes

    Science.gov (United States)

    Vetrovec, John

    2009-05-01

    We report on a novel electronically controlled active heat sink for high-power laser diodes offering unparalleled capacity in high-heat flux handling and temperature control. The heat sink receives diode waste heat at high flux and transfers it at reduced flux to environment, coolant fluid, heat pipe, or structure. Thermal conductance of the heat sink is electronically adjustable, allowing for precise control of diode temperature and the diode light wavelength. When pumping solid-state or alkaline vapor lasers, diode wavelength can be precisely temperature-tuned to the gain medium absorption features. This paper presents the heat sink physics, engineering design, and performance modeling.

  5. Coherent polarization locking of a diode emitter array.

    Science.gov (United States)

    Ng, S P; Phua, P B

    2009-07-01

    We present our work on the coherent combining of an array of diode emitters in a conventional diode bar configuration using the coherent polarization locking technique. An external laser cavity is designed so that the diode emissions from four diode emitters are spatially overlapped and passively phase locked via a series of birefringent walk-off crystals and a polarizing beam splitter. This concept was experimentally demonstrated up to 1030 mW of coherently combined power and was shown to increase the laser brightness of the diode bar by approximately 50 times.

  6. Study on the Beam Quality of Uncoupled Laser Diode Arrays

    Institute of Scientific and Technical Information of China (English)

    GAO Chunqing; WEI Guanghui

    2001-01-01

    The beam quality of uncoupled laser diode array is studied theoretically and experimentally. By calculating the second order moments of the beam emitted from the laser diode array, the dependence of the M2-factor of the laser diode array on the M2-factor of the single emitter, the ratio of the emitting region to the non-emitting space, and the number of emitters, has been deduced. From the measurement of the beam propagation the M2-factor of a laser diode bar is experimentally determined. The measured M2-factor of the laser diode bar agrees with the theoretical prediction.

  7. High-power green diode laser systems for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André

    Due to their unique characteristics, diode lasers are increasingly attractive for numerous applications. For example, in the biomedical field the provided output power, spatial quality, and wavelength coverage of diode lasers has enabled their applications in, e.g., dermatology, diffuse spectrosc......Due to their unique characteristics, diode lasers are increasingly attractive for numerous applications. For example, in the biomedical field the provided output power, spatial quality, and wavelength coverage of diode lasers has enabled their applications in, e.g., dermatology, diffuse......, the obtained results clearly strengthen the application potential of diode lasers, including the biomedical field....

  8. 2-D Design of Schottky Diodes

    Science.gov (United States)

    2000-09-29

    Schottky diode with- Lb, rse = 2.5 ,im as can be observed in figure 3. 25 ........... ...... ..... Series roi~ttarce for *ý,,,,-io irm. Ii bsai.10in 0...epitaxial layer Wp ( rse < 𔃽 -4), which is typical 4D0 ............. . . for submillimeter varactors. Of course, the influence of the .............. ~ L

  9. Tunnel Diode Discriminator with Fixed Dead Time

    DEFF Research Database (Denmark)

    Diamond, J. M.

    1965-01-01

    A solid state discriminator for the range 0.4 to 10 V is described. Tunnel diodes are used for the discriminator element and in a special fixed dead time circuit. An analysis of temperature stability is presented. The regulated power supplies are described, including a special negative resistance...

  10. Superluminescent Diode Light Sources for OCT

    Science.gov (United States)

    Shidlovski, Vladimir R.

    Contrary to laser diodes, the path of superluminescent diodes (SLDs) to widespread practical use was much longer. There was always a scientific interest in "superluminescent" light output from laser diode structures slightly below threshold that might be considerably enhanced by "damping" of the laser resonator. SLD design efforts were intensified in early 1980s when it was proved that they are "light sources of choice" for fiber-optic gyroscopes. The next wave of interest to SLDs as a "stand-alone" type of semiconductor emitters was related to advances in OCT technologies. Challenging OCT requirements, e.g. simultaneous high-power, high brightness and very low coherence length of a light source, resulted in the development of new generation of SLDs characterized by output power and brightness the same as that of medium-to-high power laser diodes, but with the spectral width and flatness of edge-emitting LEDs. In this chapter, the main principles of the development of powerful broadband SLDs and ultra-low-coherence SLD-based light sources in 650-1600 nm spectral range, and the main parameters reported to date, are reviewed. Important aspects of SLD use in practice are discussed.

  11. Light-Emitting Diodes: Learning New Physics

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the third paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide the readers with the description of experiments and pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper, published…

  12. Light-Emitting Diodes: Solving Complex Problems

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the fourth paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide readers with the description of experiments and the pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper provided…

  13. Light-Emitting Diodes: A Hidden Treasure

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2014-01-01

    LEDs, or light-emitting diodes, are cheap, easy to purchase, and thus commonly used in physics instruction as indicators of electric current or as sources of light (Fig. 1). In our opinion LEDs represent a unique piece of equipment that can be used to collect experimental evidence, and construct and test new ideas in almost every unit of a general…

  14. Achromatic optical diode in fiber optics

    CERN Document Server

    Berent, Michal; Vitanov, Nikolay V

    2013-01-01

    We propose a broadband optical diode, which is composed of one achromatic reciprocal quarter-wave plate and one non-reciprocal quarter-wave plate, both placed between two crossed polarizers. The presented design of achromatic wave plates relies on an adiabatic evolution of the Stokes vector, thus, the scheme is robust and efficient. The possible simple implementation using fiber optics is suggested.

  15. Light-Emitting Diodes: A Hidden Treasure

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2014-01-01

    LEDs, or light-emitting diodes, are cheap, easy to purchase, and thus commonly used in physics instruction as indicators of electric current or as sources of light (Fig. 1). In our opinion LEDs represent a unique piece of equipment that can be used to collect experimental evidence, and construct and test new ideas in almost every unit of a general…

  16. Phosphorescent Nanocluster Light-Emitting Diodes.

    Science.gov (United States)

    Kuttipillai, Padmanaban S; Zhao, Yimu; Traverse, Christopher J; Staples, Richard J; Levine, Benjamin G; Lunt, Richard R

    2016-01-13

    Devices utilizing an entirely new class of earth abundant, inexpensive phosphorescent emitters based on metal-halide nanoclusters are reported. Light-emitting diodes with tunable performance are demonstrated by varying cation substitution to these nanoclusters. Theoretical calculations provide insight about the nature of the phosphorescent emitting states, which involves a strong pseudo-Jahn-Teller distortion.

  17. Monolithic resonant optical reflector laser diodes

    Science.gov (United States)

    Hirata, T.; Suehiro, M.; Maeda, M.; Hihara, M.; Hosomatsu, H.

    1991-10-01

    The first monolithic resonant optical reflector laser diode that has a waveguide directional coupler and two DBR reflectors integrated by compositional disordering of quantum-well heterostructures is described. A linewidth of 440 kHz was obtained, and this value is expected to be greatly decreased by reducing the propagation loss in the integrated waveguide.

  18. Diode pumped Nd:YAG laser development

    Science.gov (United States)

    Reno, C. W.; Herzog, D. G.

    1976-01-01

    A low power Nd:YAG laser was constructed which employs GaAs injection lasers as a pump source. Power outputs of 125 mW TEM CW with the rod at 250 K and the pump at 180 K were achieved for 45 W input power to the pump source. Operation of the laser, with array and laser at a common heat sink temperature of 250 K, was inhibited by difficulties in constructing long-life GaAs LOC laser arrays. Tests verified pumping with output power of 20 to 30 mW with rod and pump at 250 K. Although life tests with single LOC GaAs diodes were somewhat encouraging (with single diodes operating as long as 9000 hours without degradation), failures of single diodes in arrays continue to occur, and 50 percent power is lost in a few hundred hours at 1 percent duty factor. Because of the large recent advances in the state of the art of CW room temperature AlGaAs diodes, their demonstrated lifetimes of greater than 5,000 hours, and their inherent advantages for this task, it is recommended that these sources be used for further CW YAG injection laser pumping work.

  19. A CW Gunn Diode Switching Element.

    Science.gov (United States)

    Hurtado, Marco; Rosenbaum, Fred J.

    As part of a study of the application of communication satellites to educational development, certain technical aspects of such a system were examined. A current controlled bistable switching element using a CW Gunn diode is reported on here. With modest circuits switching rates of the order of 10 MHz have been obtained. Switching is initiated by…

  20. A CW Gunn diode bistable switching element.

    Science.gov (United States)

    Hurtado, M.; Rosenbaum, F. J.

    1972-01-01

    Experiments with a current-controlled bistable switching element using a CW Gunn diode are reported. Switching rates of the order of 10 MHz have been obtained. Switching is initiated by current pulses of short duration (5-10 ns). Rise times of the order of several nanoseconds could be obtained.

  1. Determining Extinction Ratio Of A Laser Diode

    Science.gov (United States)

    Unger, Glenn L.

    1992-01-01

    Improved technique to determine extinction ratio of pulsed laser diode based partly on definition of extinction ratio applicable to nonideal laser pulses. Heretofore, determinations involved assumption of ideal laser pulses, and neglected optical power from background light. Because power fluctuates during real pulse, more realistic to define extinction ratio in terms of energy obtained.

  2. Microring Diode Laser for THz Generation

    DEFF Research Database (Denmark)

    Mariani, S.; Andronico, A.; Favero, I.;

    2013-01-01

    We report on the modeling and optical characterization of AlGaAs/InAs quantum-dot microring diode lasers designed for terahertz (THz) difference frequency generation (DFG) between two whispering gallery modes (WGMs) around 1.3 $\\mu$m. In order to investigate the spectral features of this active...

  3. Light-Emitting Diodes: Learning New Physics

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the third paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide the readers with the description of experiments and pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper, published…

  4. High-Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    2010-01-01

    We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 2...

  5. Qualification and Selection of Flight Diode Lasers for Space Applications

    Science.gov (United States)

    Liebe, Carl C.; Dillon, Robert P.; Gontijo, Ivair; Forouhar, Siamak; Shapiro, Andrew A.; Cooper, Mark S.; Meras, Patrick L.

    2010-01-01

    The reliability and lifetime of laser diodes is critical to space missions. The Nuclear Spectroscopic Telescope Array (NuSTAR) mission includes a metrology system that is based upon laser diodes. An operational test facility has been developed to qualify and select, by mission standards, laser diodes that will survive the intended space environment and mission lifetime. The facility is situated in an electrostatic discharge (ESD) certified clean-room and consist of an enclosed temperature-controlled stage that can accommodate up to 20 laser diodes. The facility is designed to characterize a single laser diode, in addition to conducting laser lifetime testing on up to 20 laser diodes simultaneously. A standard laser current driver is used to drive a single laser diode. Laser diode current, voltage, power, and wavelength are measured for each laser diode, and a method of selecting the most adequate laser diodes for space deployment is implemented. The method consists of creating histograms of laser threshold currents, powers at a designated current, and wavelengths at designated power. From these histograms, the laser diodes that illustrate a performance that is outside the normal are rejected and the remaining lasers are considered spaceborne candidates. To perform laser lifetime testing, the facility is equipped with 20 custom laser drivers that were designed and built by California Institute of Technology specifically to drive NuSTAR metrology lasers. The laser drivers can be operated in constant-current mode or alternating-current mode. Situated inside the enclosure, in front of the laser diodes, are 20 power-meter heads to record laser power throughout the duration of lifetime testing. Prior to connecting a laser diode to the current source for characterization and lifetime testing, a background program is initiated to collect current, voltage, and resistance. This backstage data collection enables the operational test facility to have full laser diode

  6. Plasma waves

    CERN Document Server

    Swanson, DG

    1989-01-01

    Plasma Waves discusses the basic development and equations for the many aspects of plasma waves. The book is organized into two major parts, examining both linear and nonlinear plasma waves in the eight chapters it encompasses. After briefly discussing the properties and applications of plasma wave, the book goes on examining the wave types in a cold, magnetized plasma and the general forms of the dispersion relation that characterize the waves and label the various types of solutions. Chapters 3 and 4 analyze the acoustic phenomena through the fluid model of plasma and the kinetic effects. Th

  7. Plasma astrophysics

    CERN Document Server

    Kaplan, S A; ter Haar, D

    2013-01-01

    Plasma Astrophysics is a translation from the Russian language; the topics discussed are based on lectures given by V.N. Tsytovich at several universities. The book describes the physics of the various phenomena and their mathematical formulation connected with plasma astrophysics. This book also explains the theory of the interaction of fast particles plasma, their radiation activities, as well as the plasma behavior when exposed to a very strong magnetic field. The text describes the nature of collective plasma processes and of plasma turbulence. One author explains the method of elementary

  8. Analytical and simulation studies for diode and triode ion beam extraction systems

    Institute of Scientific and Technical Information of China (English)

    M. M. Abdelrahman1; N. I. Basal; S. G. Zakhary

    2012-01-01

    This work is concerned with ion beam dynamics and compares the emittance to aberration ratios of two-and three-electrode extraction systems.The study is conducted with the aid of Version 7 of SIMION 3D ray-tracing software.The beam dependence on various parameters of the extraction systems is studied and the numerical results lead to qualitative conclusions.Ion beam characteristics using diode and triode extraction systems are investigated with the aid of the computer code SIMION 3 D,Version 7.0. The diode (two electrode extraction system) and triode (threeelectrode extraction,acceleration-deceleration system) extraction systems are designed and optimized with different geometric parameters of the electrode system,voltage applied to the extraction electrode,and plasma parameters inside the ion source chamber,as well as by the ion beam space charge.This work attempts to describe the importance of the acceleration-deceleration extraction system.It shows that besides an increase of the beam energy,the ion beam has lower emittance than the two-electrode extraction system.Ion beams of the highest quality are extracted whenever the half-angular divergence is minimum for which the perveance current intensity and the extraction gap have optimum value.Knowing the electron temperature of the plasma is necessary to determine plasma potential and the exact beam energy.

  9. Hα/ DαMeasurements Based on Photo Diode Array in the HT-7 Tokamak

    Institute of Scientific and Technical Information of China (English)

    刘建坤; 吴振伟; 万宝年; 张先梅; 周倩

    2001-01-01

    Photo Diode Array (PDA) has been successfully applied in HT-7 tokamak experiments. The PDA system is almost free of electromagnetic interference from the machine. The system is compact and inexpensive, and it is convenient to be arranged in experiment. With the PDA system, the particle confinement time (Tp) has been systematically investigated. The relations such as Tp on the center-line-averaged electron density (ne), Tp on plasma current (Ip),and Tp on the toroidal magnetic field (Bt) have been obtained. The particle confinement under the Ion Berstain Wave (IBW) Heating has also been measured and analyzed.

  10. Photovoltaic-module bypass-diode encapsulation. Annual report

    Energy Technology Data Exchange (ETDEWEB)

    1983-06-20

    The design and processing techniques necessary to incorporate bypass diodes within the module encapsulant are presented in this annual report. A comprehensive survey of available pad-mounted PN junction and Schottky diodes led to the selection of Semicon PN junction diode cells for this application. Diode junction-to-heat spreader thermal resistance measurements, performed on a variety of mounted diode chip types and sizes, have yielded values which are consistently below 1/sup 0/C per watt, but show some instability when thermally cycled over the temperature range from -40 to 150/sup 0/C. Based on the results of a detailed thermal analysis, which covered the range of bypass currents from 2 to 20 amperes, three representative experimental modules, each incorporating integral bypass diode/heat spreader assemblies of various sizes, were designed and fabricated. Thermal testing of these modules has enabled the formation of a recommended heat spreader plate sizing relationship. The production cost of three encapsulated bypass diode/heat spreader assemblies were compared with similarly rated externally-mounted packaged diodes. An assessment of bypass diode reliability, which relies heavily on rectifying diode failure rate data, leads to the general conclusion that, when proper designed and installed, these devices will improve the overall reliability of a terrestrial array over a 20 year design lifetime.

  11. Application of spherical micro diodes for brachytherapy dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Broisman, Andrey, E-mail: andreybr@ariel.ac.i [Medical Physics, Ariel University Center, Ariel 40700 (Israel); Shani, Gad [Biomedical Engineering, Ben Gurion University, P.O. Box 653, Beer Sheva 84105 (Israel)

    2011-03-15

    The research presented in this paper demonstrates the feasibility and the advantages of using spherical micro diodes for radiation dosimetry. The spherical symmetry of the diode response is demonstrated, compared to that of planar diodes. The application of the spherical diode described here is for radiotherapy dosimetry, particularly brachytherapy. Measurements were done in PMMA phantoms. The advantage of the spherical diode is that it can be used for radiation measurement in a 4{pi} geometry, it was demonstrated by measurements in both axial and azimuthal planes. The diodes were found to respond equally to radiation coming from all directions, directly from the source or due to scattered radiation within the medium. In the present work 1.8 mm diameter silicone diodes were used. The small size of these spherical diodes provides local dose measurement and can be used for in situ dosimetry while treatment takes place. Treatment planning correction can be made accordingly. Commercially available seeds of the isotopes I{sup 125} and Pd{sup 103} were used as radiation sources. The spherical diodes response was compared with that of planar diodes XRB generally used for UV and X-ray dosimetry, and with TLD measurements. We have also compared the measured results with Monte Carlo simulation, applying the MCNP code and with calculations shown in the TG-43 report.

  12. Advanced Plasma Diagnostic Analysis using Neural Networks

    Science.gov (United States)

    Tritz, Kevin; Reinke, Matt

    2016-10-01

    Machine learning techniques, specifically neural networks (NN), are used with sufficient internal complexity to develop an empirically weighted relationship between a set of filtered X-ray emission measurements and the electron temperature (Te) profile for a specific class of discharges on NSTX. The NN response matrix is used to calculate the Te profile directly from the filtered X-ray diode measurements which extends the electron temperature time response from the 60Hz Thomson Scattering profile measurements to fast timescales (>10kHz) and greatly expands the applicability of Te profile information to fast plasma phenomena, such as ELM dynamics. This process can be improved by providing additional information which helps the neural network refine the relationship between Te and the corresponding X-ray emission. NN supplement limited measurements of a particular quantity using related measurements with higher time or spatial resolution. For example, the radiated power (Prad) determined using resistive foil bolometers is related to similar measurements using AXUV diode arrays through a complex and slowly time-evolving quantum efficiency curve in the VUV spectral region. Results from a NN trained using Alcator C-Mod resistive foil bolometry and AXUV diodes are presented, working towards hybrid Prad measurements with the quantitative accuracy of resistive foil bolometers and with the enhanced temporal and spatial resolution of the unfiltered AXUV diode arrays. Work supported by Department of Energy Grant #: DE-FG02-09ER55012.

  13. Efficient Visible Electroluminescence from Porous Silicon Diodes Passivated by Carbon Films

    Institute of Scientific and Technical Information of China (English)

    李宏建; 彭景翠; 瞿述; 颜永红; 许雪梅; 赵楚军

    2002-01-01

    By using n-butylamine as a carbon resource, carbon film is deposited on the p-n porous silicon (PS) surface with aradio-frequency glow discharge plasma system. Raman spectra and infrared reflection (IR) spectra of the carbonfilms indicate that there are amine-group and hydrogen atoms therein. The IR spectra of the passivated PSsamples exhibit that the PS surfaces are mainly covered with Si-C, Si-N and Si-O bonds. Electroluminescence(EL) spectra show that the EL intensity of the passivated PS diodes increases greatly and the blueshift of theEL peak occurs compared with the diodes without treatment. Both of these are stable while the passivateddiodes are exposed to the air indoors. The I-V characteristics reveal that the passivated diodes have a smallerseries resistance and a lower onset voltage. The influence of the carbon film passivation on EL properties of PShas also been discussed. The results have proven that carbon film passivation is a good way to enhance the PSluminescent intensity and stability.

  14. Magnetically insulated diode for generating pulsed neutron and gamma ray emissions

    Science.gov (United States)

    Kuswa, Glenn W.; Leeper, Ramon J.

    1987-01-01

    A magnetically insulated diode employs a permanent magnet to generate a magnetic insulating field between a spaced anode and cathode in a vacuum. An ion source is provided in the vicinity of the anode and used to liberate ions for acceleration toward the cathode. The ions are virtually unaffected by the magnetic field and are accelerated into a target for generating an nuclear reaction. The ions and target material may be selected to generate either neutrons or gamma ray emissions from the reaction of the accelerated ions and the target. In another aspect of the invention, a field coil is employed as part of one of the electrodes. A plasma prefill is provided between the electrodes prior to the application of a pulsating potential to one of the electrodes. The field coil multiplies the applied voltage for high diode voltage applications. The diode may be used to generate a .sup.7 Li(p,.gamma.).sup.8 Be reaction to produce 16.5 MeV gamma emission.

  15. Low-cost 420nm blue laser diode for tissue cutting and hemostasis

    Science.gov (United States)

    Linden, Kurt J.

    2016-03-01

    This paper describes the use of a 420 nm blue laser diode for possible surgery and hemostasis. The optical absorption of blood-containing tissue is strongly determined by the absorption characteristics of blood. Blood is primarily comprised of plasma (yellowish extracellular fluid that is approximately 95% water by volume) and formed elements: red blood cells (RBCs), white blood cells (WBCs) and platelets. The RBCs (hemoglobin) are the most numerous, and due to the spectral absorption characteristics of hemoglobin, the optical absorption of blood has a strong relative maximum value in the 420 nm blue region of the optical spectrum. Small, low-cost laser diodes emitting at 420 nm with tens of watts of continuous wave (CW) optical power are becoming commercially available. Experiments on the use of such laser diodes for tissue cutting with simultaneous hemostasis were carried out and are here described. It was found that 1 mm deep x 1 mm wide cuts can be achieved in red meat at a focused laser power level of 3 W moving at a velocity of ~ 1 mm/s. The peripheral necrosis and thermal damage zone extended over a width of approximately 0.5 mm adjacent to the cuts. Preliminary hemostasis experiments were carried out with fresh equine blood in Tygon tubing, where it was demonstrated that cauterization can occur in regions of intentional partial tubing puncture.

  16. Combustion control using an IR diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Niska, J.; Rensgard, A.; Malmberg, D. [MEFOS, Lulea (Sweden)

    2003-07-01

    Tunable diode laser absorption spectroscopy (TDLAS) is a recent development in process instrumentation. This paper describes the testing of a commercial TDLAS instrument for continuous oxygen analysis of the furnace combustion gases in an industrial reheating furnace and in a pilot furnace at MEFOS. A time-averaged oxygen concentration signal with a TDC2000 furnace controller at MEFOS was used to prove automatic control of the air-to-fuel ratio. The local measurements of the oxygen concentration using a zirconia probe in both furnaces compared well with the oxygen concentrations measured by the TDLAS instrument. The advantage of the diode laser is its high reliability for average gas concentration measurements in the path of the beam, when compared to point gas analysis with conventional zirconia instrumentation. Improved process control is derived from reliable gas analysis, which translates into energy savings, reduced emissions and improved productivity for steel reheating furnaces. 7 refs., 8 figs.

  17. Diode-pumped optical parametric oscillator.

    Science.gov (United States)

    Geiger, A R; Hemmati, H; Farr, W H; Prasad, N S

    1996-02-01

    Diode-pumped optical parametric oscillation has been demonstrated for the first time to our knowledge in a single Nd:MgO:LiNbO(3) nonlinear crystal. The crystal is pumped by a semiconductor diode laser array at 812 nm. The Nd(3+) ions absorb the 812-nm radiation to generate 1084-nm laser oscillation. On internal Q switching the 1084-nm radiation pumps the LiNbO(3) host crystal that is angle cut at 46.5 degrees and generates optical parametric oscillation. The oscillation threshold that is due to the 1084-nm laser pump with a pulse length of 80 ns in a 1-mm-diameter beam was measured to be approximately 1 mJ and produced 0.5-mJ output at 3400-nm signal wavelength.

  18. Diode-quad bridge circuit means

    Science.gov (United States)

    Harrison, D. R.; Dimeff, J. (Inventor)

    1975-01-01

    A transducer and frequency discriminator circuit is described including a four-terminal circulating diode bridge, a first pair of capacitors connected in series across two terminals of the bridge, and a second pair of capacitors, or other impedance elements, connected in series across the other two terminals of the bridge. A source of balanced alternating electrical energy for energizing the circuit is coupled between the commonly connected plates of the first pair of capacitors and the commonly connected plates of the second pair of capacitors. Due to the operation of the diode bridge, the sum of the resultant charges developed on the first pair of capacitors is proportional to the relationship between the respective capacitors of the second pair, and consequently, an output voltage taken across the first pair of capacitors will be proportional to that relationship.

  19. Schottky diodes from 2D germanane

    Science.gov (United States)

    Sahoo, Nanda Gopal; Esteves, Richard J.; Punetha, Vinay Deep; Pestov, Dmitry; Arachchige, Indika U.; McLeskey, James T.

    2016-07-01

    We report on the fabrication and characterization of a Schottky diode made using 2D germanane (hydrogenated germanene). When compared to germanium, the 2D structure has higher electron mobility, an optimal band-gap, and exceptional stability making germanane an outstanding candidate for a variety of opto-electronic devices. One-atom-thick sheets of hydrogenated puckered germanium atoms have been synthesized from a CaGe2 framework via intercalation and characterized by XRD, Raman, and FTIR techniques. The material was then used to fabricate Schottky diodes by suspending the germanane in benzonitrile and drop-casting it onto interdigitated metal electrodes. The devices demonstrate significant rectifying behavior and the outstanding potential of this material.

  20. Schottky diodes from 2D germanane

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, Nanda Gopal; Punetha, Vinay Deep [Nanoscience and Nanotechnology Centre, Department of Chemistry, Kumaun University, Nainital, 263001 Uttarakhand (India); Esteves, Richard J; Arachchige, Indika U. [Department of Chemistry, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Pestov, Dmitry [Nanomaterials Core Characterization Center, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); McLeskey, James T., E-mail: JamesMcLeskey@rmc.edu [Department of Physics, Randolph-Macon College, Ashland, Virginia 23005 (United States)

    2016-07-11

    We report on the fabrication and characterization of a Schottky diode made using 2D germanane (hydrogenated germanene). When compared to germanium, the 2D structure has higher electron mobility, an optimal band-gap, and exceptional stability making germanane an outstanding candidate for a variety of opto-electronic devices. One-atom-thick sheets of hydrogenated puckered germanium atoms have been synthesized from a CaGe{sub 2} framework via intercalation and characterized by XRD, Raman, and FTIR techniques. The material was then used to fabricate Schottky diodes by suspending the germanane in benzonitrile and drop-casting it onto interdigitated metal electrodes. The devices demonstrate significant rectifying behavior and the outstanding potential of this material.

  1. Reconfigurable nonreciprocity with nonlinear Fano diode

    OpenAIRE

    Xu, Yi; Miroshnichenko, Andrey E.

    2013-01-01

    We propose a dynamically tunable nonreciprocal response for wave propagations by employing nonlinear Fano resonances. We demonstrate that transmission contrast of waves propagation in opposite directions can be controlled by excitation signal. In particular, the unidirectional transmission can be flipped at different times of a pulse, resembling a diode operation with {\\em dynamical reconfigurable nonreciprocity}. The key mechanism is the interaction between the linear and nonlinear Fano reso...

  2. Safety of light emitting diodes in toys.

    Science.gov (United States)

    Higlett, M P; O'Hagan, J B; Khazova, M

    2012-03-01

    Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

  3. An All-Silicon Passive Optical Diode

    OpenAIRE

    Fan, Li; Wang, Jian; Varghese, Leo T.; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M.; Qi, Minghao

    2012-01-01

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input pow...

  4. An All-Silicon Passive Optical Diode

    OpenAIRE

    Fan, Li; Wang,Jian; Varghese, Leo T.; Shen,Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M.; Qi, Minghao

    2012-01-01

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input pow...

  5. Diode Laser Sensor for Scramjet Inlet

    Science.gov (United States)

    2010-05-11

    Conference’. 1.2 O’Byrne, S., Huynh, L., Wittig, S. M. and Smith, N. S. A. (2009), Non- intrusive water vapour absorp- tion measurements in a simulated...O’Byrne, L. Huynh, S. M. Wittig and N. S. A. Smith, “Non- intrusive Water Vapour Absorp- tion Measurements in a Simulated Helicopter Exhaust”, Proceedings...rather than at a surface. The measurement techniques used at these hypersonic flow conditions should also be non- intrusive . Tuneable diode laser

  6. Rugged, Tunable Extended-Cavity Diode Laser

    Science.gov (United States)

    Moore, Donald; Brinza, David; Seidel, David; Klipstein, William; Choi, Dong Ho; Le, Lam; Zhang, Guangzhi; Iniguez, Roberto; Tang, Wade

    2007-01-01

    A rugged, tunable extended-cavity diode laser (ECDL) has been developed to satisfy stringent requirements for frequency stability, notably including low sensitivity to vibration. This laser is designed specifically for use in an atomic-clock experiment to be performed aboard the International Space Station (ISS). Lasers of similar design would be suitable for use in terrestrial laboratories engaged in atomic-clock and atomic-physics research.

  7. Diode having trenches in a semiconductor region

    Science.gov (United States)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  8. Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide

    Science.gov (United States)

    Muziol, Grzegorz; Turski, Henryk; Siekacz, Marcin; Grzanka, Szymon; Perlin, Piotr; Skierbiszewski, Czesław

    2016-09-01

    A novel design consisting of a thick InGaN waveguide is proposed to fully eliminate leakage to the GaN substrate in nitride laser diodes. The design is based on the effective refractive index engineering and does not require the commonly used thick AlGaN claddings. The conditions required to fully eliminate the optical leakage are discussed. Experimental results from eight blue laser diodes with different indium contents and thicknesses of the InGaN waveguide grown by plasma-assisted molecular beam epitaxy are presented to validate the theoretical results.

  9. Integrated software package for laser diodes characterization

    Science.gov (United States)

    Sporea, Dan G.; Sporea, Radu A.

    2003-10-01

    The characteristics of laser diodes (wavelength of the emitted radiation, output optical power, embedded photodiode photocurrent, threshold current, serial resistance, external quantum efficiency) are strongly influenced by their driving circumstances (forward current, case temperature). In order to handle such a complex investigation in an efficient and objective manner, the operation of several instruments (a laser diode driver, a temperature controller, a wavelength meter, a power meter, and a laser beam analyzer) is synchronously controlled by a PC, through serial and GPIB communication. For each equipment, instruments drivers were designed using the industry standards graphical programming environment - LabVIEW from National Instruments. All the developed virtual instruments operate under the supervision of a managing virtual instrument, which sets the driving parameters for each unit under test. The manager virtual instrument scans as appropriate the driving current and case temperature values for the selected laser diode. The software enables data saving in Excel compatible files. In this way, sets of curves can be produced according to the testing cycle needs.

  10. New laser materials for laser diode pumping

    Science.gov (United States)

    Jenssen, H. P.

    1990-01-01

    The potential advantages of laser diode pumped solid state lasers are many with high overall efficiency being the most important. In order to realize these advantages, the solid state laser material needs to be optimized for diode laser pumping and for the particular application. In the case of the Nd laser, materials with a longer upper level radiative lifetime are desirable. This is because the laser diode is fundamentally a cw source, and to obtain high energy storage, a long integration time is necessary. Fluoride crystals are investigated as host materials for the Nd laser and also for IR laser transitions in other rare earths, such as the 2 micron Ho laser and the 3 micron Er laser. The approach is to investigate both known crystals, such as BaY2F8, as well as new crystals such as NaYF8. Emphasis is on the growth and spectroscopy of BaY2F8. These two efforts are parallel efforts. The growth effort is aimed at establishing conditions for obtaining large, high quality boules for laser samples. This requires numerous experimental growth runs; however, from these runs, samples suitable for spectroscopy become available.

  11. HETEROJUNCTION DIODES OF POROUS SILICON WITH SOLUBLE POLYANILINE

    Institute of Scientific and Technical Information of China (English)

    Jun-hua Fan; Mei-xiang Wan; Dao-ben Zhu

    1999-01-01

    Two kinds of heterojunction diodes of porous silicon (PS) with soluble polyaniline (PANI) were fabricated. One is a heterojunction diode of PS with water-soluble copolymer of polyaniline(PAOABSA),Al/PS-PAOABSA/Au cell as rectifying diode. Another is a heterojunction diode of PS with soluble polyaniline doped with DBSA, Al/PS-PANI (DBSA)/Au cell as light emitting diode (LED). The rectifying characteristics of the rectifying diodes were measured as a function of the degree of sulfonation and thickness of the copolymers, as well as oxidation of PS. The rectifying ratio of the heterojunction can reach 5.0×104 at ±3 V bias. For the LED, the photoluminescence (PL) and electroluminescence (EL) spectra were measured and discussed.

  12. Theoretical simulation of the picosecond runaway-electron beam in coaxial diode filled with SF6 at atmospheric pressure

    Science.gov (United States)

    Kozyrev, Andrey; Kozhevnikov, Vasily; Lomaev, Mikhail; Sorokin, Dmitry; Semeniuk, Natalia; Tarasenko, Victor

    2016-05-01

    This paper presents detailed results of gas discharge theoretical simulation and the explanation of probabilistic mechanism of fast-electrons generation. Within the framework of a hybrid mathematical model, the hydrodynamic and the kinetic approaches are used simultaneously in order to describe the dynamics of different components of a low-temperature discharge plasma. The breakdown of a coaxial diode occurs in the form of a dense plasma region expanding from the cathode. On this background there is a formation of runaway electrons that are initiated by the ensemble of plasma electrons generated in the region of locally enhanced electric field within the front of the dense plasma. It is shown that the power spectrum of fast electrons in the discharge contains the group of electrons with the so-called “anomalous” energies. Comparison of the calculation results with the existent experimental data gives a good agreement for all major process parameters.

  13. An Optical Streak Diagnostic for Observing Anode-Cathode Plasmas for Radiographic Source Development

    Energy Technology Data Exchange (ETDEWEB)

    Droemer, Darryl W. [National Security Technologies, LLC; Crain, Marlon D.; Lare, Gregory A. [National Security Technologies, LLC; Bennett, Nichelle L. [National Security Technologies, LLC; Johnston, Mark D. [Sandia National Laboratories

    2013-06-13

    National Security Technologies, LLC, and Sandia National Laboratories are collaborating in the development of pulsed power–driven flash x-ray radiographic sources that utilize high-intensity electron beam diodes. The RITS 6 (Radiographic Integrated Test Stand) accelerator at Sandia is used to drive a self magnetic pinch diode to produce a Bremsstrahlung x-ray source. The high electric fields and current densities associated with these short A-K gap pinch beam diodes present many challenges in diode development. Plasmas generated at both the anode and cathode affect the diode performance, which is manifested in varying spot (source) sizes, total dose output, and impedance profiles. Understanding the nature of these plasmas including closure rates and densities is important in modeling their behavior and providing insight into their mitigation. In this paper we describe a streak camera–based optical diagnostic that is capable of observing and measuring plasma evolution within the A-K gap. By imaging a region of interest onto the input slit of a streak camera, we are able to produce a time-resolved one-dimensional image of the evolving plasma. Typical data are presented.

  14. Underwater Chaotic Lidar using Blue Laser Diodes

    Science.gov (United States)

    Rumbaugh, Luke K.

    The thesis proposes and explores an underwater lidar system architecture based on chaotic modulation of recently introduced, commercially available, low cost blue laser diodes. This approach is experimentally shown to allow accurate underwater impulse response measurements while eliminating the need for several major components typically found in high-performance underwater lidar systems. The proposed approach is to: 1. Generate wideband, noise-like intensity modulation signals using optical chaotic modulation of blue-green laser diodes, and then 2. Use this signal source to develop an underwater chaotic lidar system that uses no electrical signal generator, no electro-optic modulator, no optical frequency doubler, and no large-aperture photodetector. The outcome of this thesis is the demonstration of a new underwater lidar system architecture that could allow high resolution ranging, imaging, and water profiling measurements in turbid water, at a reduced size, weight, power and cost relative to state-of-the-art high-performance underwater lidar sensors. This work also makes contributions to the state of the art in optics, nonlinear dynamics, and underwater sensing by demonstrating for the first time: 1. Wideband noise-like intensity modulation of a blue laser diode using no electrical signal generator or electro-optic modulator. Optical chaotic modulation of a 462 nm blue InGaN laser diode by self-feedback is explored for the first time. The usefulness of the signal to chaotic lidar is evaluated in terms of bandwidth, modulation depth, and autocorrelation peak-to-sidelobe-ratio (PSLR) using both computer and laboratory experiments. In laboratory experiments, the optical feedback technique is shown to be effective in generating wideband, noise-like chaotic signals with strong modulation depth when the diode is operated in an external-cavity dominated state. The modulation signal strength is shown to be limited by the onset of lasing within the diode's internal

  15. Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

    Science.gov (United States)

    Bai, Yang; Jia, Rui; Wu, De-Qi; Jin, Zhi; Liu, Xin-Yu; Lin, Mei-Yu

    2013-08-01

    Mesa etching technology is considerably important in the Gunn diode fabrication process. In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study. We use two chlorine-based etchants, one is HCl-based solution (HCl/H3PO4), and the other is Cl2-based gas mixture by utilizing inductively coupled plasma system (ICP). The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall, whilst ICP system (Cl2-based) offers an excellent and uniform vertical sidewall, and the over-etching is tiny on the top and the bottom of mesa. And the fabricated mesas of Gunn diodes have average etching rates of ~ 0.6 μm/min and ~ 1.2 μm/min, respectively. The measured data show that the current of Gunn diode by wet etching is lower than that by ICP, and the former has a higher threshold voltage. It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.

  16. Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

    Institute of Scientific and Technical Information of China (English)

    Bai Yang; Jia Rui; Wu De-Qi; Jin Zhi; Liu Xin-Yu; Lin Mei-Yu

    2013-01-01

    Mesa etching technology is considerably important in the Gunn diode fabrication process.In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study.We use two chlorine-based etchants,one is HCl-based solution (HCl/H3PO4),and the other is Cl2-based gas mixture by utilizing inductively coupled plasma system (ICP).The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall,whilst ICP system (Cl2-based) offers an excellent and uniform vertical sidewall,and the over-etching is tiny on the top and the bottom of mesa.And the fabricated mesas of Gunn diodes have average etching rates of ~ 0.6 μm/min and ~ 1.2 μm/min,respectively.The measured data show that the current of Gunn diode by wet etching is lower than that by ICP,and the former has a higher threshold voltage.It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.

  17. Control of a large vacuum wave precursor on the SABRE voltage adder MITL and extraction ion diode

    Science.gov (United States)

    Cuneo, M. E.; Hanson, D. L.; Poukey, J. W.; Menge, P. R.; Savage, M. E.; Smith, J. R.; Bernard, M. A.

    SABRE is a ten-cavity magnetically insulated voltage adder (6MV, 300 kA) used to study ion beam production in high voltage extraction applied-B ion diodes. Observations indicate that the machine power initially propagates in a large-amplitude vacuum wave prior to electron emission. This vacuum wave 'precursor' has an important impact on the turn-on and impedance history of ion diodes. Some typical precursor characteristics are shown using transmission line, diode, and beam current and voltage data and are compared to TWOQUICK simulations. Two techniques are under investigation to control the precursor and its effects on diode performance. A plasma opening switch (POS) has been used to erode the precursor. Field enhancing inserts are also planned to decrease the macroscopic field required for electron emission from the cathode. This will limit the distance over which vacuum and insulated waves separate by propagation at different velocities. Experimental data from the POS technique and TWOQUICK simulations of the insert technique are presented and discussed.

  18. Laboratory diode laser spectroscopy in molecular planetary astronomy

    Science.gov (United States)

    Jennings, D. E.

    1988-01-01

    Infrared spectroscopy of planetary atmospheres is performed at high spectral resolution comparable to that in the laboratory. This requires that laboratory spectroscopy use the highest resolution and the most accurate techniques. Tunable diode laser spectroscopy can supply many of the spectroscopic parameters needed by astronomers. In particular, line positions, line strengths, and collisional line widths are measured with diode lasers, and these are often among the best values available. Diode laser spectra are complimentary to lower resolution, broader-coverage Fourier transform spectra. Certain procedures must be adopted, however, when using diode lasers, for determining their output characteristics and for calibrating each spectrum against quality references.

  19. A novel diode laser system for photodynamic therapy

    DEFF Research Database (Denmark)

    Samsøe, E.; Andersen, P. E.; Petersen, P.;

    2001-01-01

    In this paper a novel diode laser system for photodynamic therapy is demonstrated. The system is based on linear spatial filtering and optical phase conjugate feedback from a photorefractive BaTiO3 crystal. The spatial coherence properties of the diode laser are significantly improved. The system...... is extracted in a high-quality beam and 80 percent of the output power is extracted through the fiber. The power transmitted through tile fiber scales linearly with the power of the laser diode. which means that a laser diode emitting 1.7 W multi-mode radiation would provide 1 W of optical power through a 50...

  20. High stable power control of a laser diode

    Institute of Scientific and Technical Information of China (English)

    YANG Jiu-ru; LI Cheng; YE Hong-an; L(U) Guo-hui; JIA Shi-lou

    2006-01-01

    In this paper,the low and the high frequency noises of a laser diode have been analyzed. Based on the analysis a novel scheme that adapts analog and digital hybrid techniques is proposed to stabilize the output power of a laser diode. With the hybrid controller,the low and the high frequency noises of a laser diode are conspicuously reduced.By accurate calculation,the short-term stability of the output power of laser diode reaches ±0.55‰, and the long-term stability is ±0.7‰.

  1. Comparison of Diode and Argon Laser Lesions in Rabbit Retina

    Institute of Scientific and Technical Information of China (English)

    Hui Zhang; Xiaoxin Li; Bin Li; Jiping Da

    2004-01-01

    Purpose: To compare the histological alteration of retina with various spot intensities between diode and argon lasers in order to instruct the clinical use of 810 nm diode laser.Methods: Transpupillary retinal photocoagulations were performed on 42 eyes of 27pigmented rabbits. Histopathologic alteration of lesions in different intensities and different time intervals after irradiation produced by diode and argon laser was observed and compared using light microscopy. Areas of various lesions measured by image analysis system (CMIAS) were compared quantitatively.Results: Histopathologically, two-week-old grade 2 lesions produced by diode laser induced the disappearance of outer nuclear cells. More than a half of all showed reduction in number of outer nuclear layer cells in argon. Fibroblasts appeared in the diode grade 3lesions 5 days after irradiation. CMIAS data showed that all the areas of diode lesions immediately after photocoagulation were to be larger than those of argon laser lesions in the same spot intensity (P < 0.05). However, twenty-four hours after photocoagulation, the area of the diode lesions increased less than that of the argon laser lesions (8%vs.23%).Conclusion: The acute histological effect caused by 810 nm diode laser and argon green laser is similar,while the expansion of lesion area 24 hours after photocoagulation was less with the diode laser compared to the argon. This may be the first report in the literature regarding quantitative analysis of the delayed reaction of argon green lasers.

  2. Planar GaAs diodes for THz frequency mixing applications

    Science.gov (United States)

    Bishop, William L.; Crowe, Thomas W.; Mattauch, Robert J.; Dossal, Hasan

    1992-01-01

    Schottky barrier diodes for terahertz applications are typically fabricated as a micron to sub-micron circular anode metallization on GaAs which is contacted with a sharp wire (whisker). This structure has the benefits of the simplicity of the fabrication of the diode chip, the minimal shunt capacitance of the whisker contact and the ability of the whisker wire to couple energy to the diode. However, whisker-contacted diodes are costly to assembly and difficult to qualify for space applications. Also, complex receiver systems which require many diodes are difficult to assemble. The objective of this paper is to discuss the advantages of planar Schottky diodes for high frequency receiver applications and to summarize the problems of advancing the planar technology to the terahertz frequency range. Section 2 will discuss the structure, fabrication and performance of state-of-the-art planar Schottky diodes. In Section 3 the problems of designing and fabricating planar diodes for terahertz frequency operation are discussed along with a number of viable solutions. Section 4 summarizes the need for further research and cooperation between diode designers and RF engineers.

  3. Position and mode dependent coupling of terahertz quantum cascade laser fields to an integrated diode

    Science.gov (United States)

    Dyer, Gregory C.; Nordquist, Christopher D.; Cich, Michael J.; Ribaudo, Troy; Grine, Albert D.; Fuller, Charles T.; Reno, John L.; Wanke, Michael C.

    2013-10-01

    A Schottky diode integrated into a terahertz quantum cascade laser waveguide couples directly to the internal laser fields. In a multimode laser, the diode response is correlated with both the instantaneous power and the coupling strength to the diode of each lasing mode. Measurements of the rectified response of diodes integrated in two quantum cascade laser cavities at different locations indicate that the relative diode position strongly influences the laser-diode coupling.

  4. Position and mode dependent coupling of terahertz quantum cascade laser fields to an integrated diode

    CERN Document Server

    Dyer, Gregory C; Cich, Michael J; Ribaudo, Troy; Grine, Albert D; Fuller, Charles T; Reno, John L; Wanke, Michael C

    2016-01-01

    A Schottky diode integrated into a terahertz quantum cascade laser waveguide couples directly to the internal laser fields. In a multimode laser, the diode response is correlated with both the instantaneous power and the coupling strength to the diode of each lasing mode. Measurements of the rectified response of diodes integrated in two quantum cascade laser cavities at different locations indicate that the relative diode position strongly influences the laser-diode coupling.

  5. Plasma Antenna

    OpenAIRE

    N M Vijay

    2014-01-01

    The fundamental base of plasma antenna is the use of an ionized medium as a conductor. The plasma antenna is a radiofrequency antenna formed by a plasma columns, Filaments or sheets, which are excited by a surface wave. The relevance of this device is how rapidly it can be turned on and off, only applying an electrical pulse. Besides its wide carrier frequency, the great directivity and controllable antenna shape. Otherwise a disadvantage is that it needs energy to be ionized....

  6. Plasma physics

    CERN Document Server

    Drummond, James E

    2013-01-01

    A historic snapshot of the field of plasma physics, this fifty-year-old volume offers an edited collection of papers by pioneering experts in the field. In addition to assisting students in their understanding of the foundations of classical plasma physics, it provides a source of historic context for modern physicists. Highly successful upon its initial publication, this book was the standard text on plasma physics throughout the 1960s and 70s.Hailed by Science magazine as a ""well executed venture,"" the three-part treatment ranges from basic plasma theory to magnetohydrodynamics and microwa

  7. Control of GaAs Microwave Schottky Diode Electrical Characteristics by Contact Geometry: The Gap Diode.

    Science.gov (United States)

    1982-05-01

    versus incident RF power of a Gap diode (V- bO ) .. . . . Ii i.... .. l -- _ _ __ll .. . I -82- c"-)) IZDn UU Figure 36. Single-ended mixer conversion...267 (1970). (12] C.J. Madams , D.V. Morgan, J.M. Howes, "Outmigratlon of Gallium from Au-GaAs Interfaces", Electronic Letters, Vol. 11(24), 574 (1975

  8. Superluminescent diode and single mode laser

    Energy Technology Data Exchange (ETDEWEB)

    Kwong, S.K.; Lau, K.Y.; BarChim, N.; Ury, I.

    1989-06-27

    A buried heterostructure superluminescent diode is described comprising: an elongated active gain layer having an output end and a non-output end; a first n-type cladding layer on one face of the gain layer and a second p-type cladding layer on the other face of the gain layer for pumping the active gain layer, the cladding layer having a lower index of refraction than the active gain layer; a blocking layer having a lower index of refraction than the active gain layer along each longitudinal edge of the active gain layer; and a light absorbing medium at the non-output end of the active gain layer.

  9. Method for partially coating laser diode facets

    Science.gov (United States)

    Dholakia, Anil R. (Inventor)

    1990-01-01

    Bars of integral laser diode devices cleaved from a wafer are placed with their p regions abutting and n regions abutting. A thin BeCu mask having alternate openings and strips of the same width as the end facets is used to mask the n region interfaces so that multiple bars can be partially coated over their exposed p regions with a reflective or partial reflective coating. The partial coating permits identification of the emitting facet from the fully coated back facet during a later device mounting procedure.

  10. Atomically thin quantum light-emitting diodes

    Science.gov (United States)

    Palacios-Berraquero, Carmen; Barbone, Matteo; Kara, Dhiren M.; Chen, Xiaolong; Goykhman, Ilya; Yoon, Duhee; Ott, Anna K.; Beitner, Jan; Watanabe, Kenji; Taniguchi, Takashi; Ferrari, Andrea C.; Atatüre, Mete

    2016-09-01

    Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.

  11. Efficient organic light emitting-diodes (OLEDs)

    CERN Document Server

    Chang, Yi-Lu

    2015-01-01

    Following two decades of intense research globally, the organic light-emitting diode (OLED) has steadily emerged as the ultimate display technology of choice for the coming decades. Portable active matrix OLED displays have already become prevalent, and even large-sized ultra-high definition 4K TVs are being mass-produced. More exotic applications such as wearable displays have been commercialized recently. With the burgeoning success in displays, researchers are actively bringing the technology forward into the exciting solid-state lighting market. This book presents the knowledge needed for

  12. Neutron Detection Using Gadolinium-Based Diodes

    Science.gov (United States)

    2011-03-01

    U Uranium UNL The University of Nebraska, Lincoln XRD X-Ray Diffraction 1 NEUTRON DETECTION USING GADOLINIUM-BASED DIODES I...detector volume of approximately 3.46x10-6 cm3. 6 4 2 0 2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Applied BiasV De ple tio nW idt hm  Si SiC 22...Layer deposition on the SiC substrate was confirmed by x-ray diffraction ( XRD ), however, no ellipsometry or other characterization measurements were

  13. Laser Diode Pumped Solid State Lasers

    Science.gov (United States)

    1987-01-01

    CRYSTAL ._____ ____ &m? * Deuterated • Potassium Dihydrogen . Phosphate - ’ KD PO (KD*P) ~ .~ ,_ .i-; Deuterated Ceslum 43ssI6 1 .. r., Dihydrogen ...as a buffer layer to absorb the thermal strain differential between the diode and a copper heatsink has also been suggested in the past and a recent...Potassium Titanium d33829-3 0.16 *; . ~ Penta- Phosphate - ’(20 na) ;A.: KTiOPOi (KTP) - Barium Sodium d33 8 43 .0j 4 eNilhatsh RA.NaNhO

  14. Composite resonator vertical cavity laser diode

    Energy Technology Data Exchange (ETDEWEB)

    Choquette, K.D.; Hou, H.Q.; Chow, W.W.; Geib, K.M.; Hammons, B.E.

    1998-05-01

    The use of two coupled laser cavities has been employed in edge emitting semiconductor lasers for mode suppression and frequency stabilization. The incorporation of coupled resonators within a vertical cavity laser opens up new possibilities due to the unique ability to tailor the interaction between the cavities. Composite resonators can be utilized to control spectral and temporal properties within the laser; previous studies of coupled cavity vertical cavity lasers have employed photopumped structures. The authors report the first composite resonator vertical cavity laser diode consisting of two optical cavities and three monolithic distributed Bragg reflectors. Cavity coupling effects and two techniques for external modulation of the laser are described.

  15. Multifractal properties of resistor diode percolation.

    Science.gov (United States)

    Stenull, Olaf; Janssen, Hans-Karl

    2002-03-01

    Focusing on multifractal properties we investigate electric transport on random resistor diode networks at the phase transition between the nonpercolating and the directed percolating phase. Building on first principles such as symmetries and relevance we derive a field theoretic Hamiltonian. Based on this Hamiltonian we determine the multifractal moments of the current distribution that are governed by a family of critical exponents [psi(l)]. We calculate the family [psi(l)] to two-loop order in a diagrammatic perturbation calculation augmented by renormalization group methods.

  16. Diode-Assisted Buck-Boost Voltage-Source Inverters

    DEFF Research Database (Denmark)

    Gao, Feng; Loh, Poh Chiang; Teodorescu, Remus;

    2009-01-01

    This paper proposes a number of diode-assisted buck-boost voltage-source inverters with a unique X-shaped diode-capacitor network inserted between the inverter circuitry and dc source for producing a voltage gain that is comparatively higher than those of other buck-boost conversion techniques...

  17. Compact green-diode-based lasers for biophotonic bioimaging

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Petersen, Paul Michael

    2014-01-01

    Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers.......Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers....

  18. IMPATT diodes. Citations from the NTIS data base

    Science.gov (United States)

    Reed, W. E.

    1980-04-01

    Government sponsored research reports are cited covering the design, characterization, and applications of IMPATT diodes. Topics include reliability, power handling, properties, noise, fabrication, and radiation effects. The use of silicon and gallium arsenide IMPATT diodes for microwave generation and amplification is included. This updated bibliography contains 182 abstracts, 14 of which are new entries to the previous edition.

  19. Organic reprogrammable circuits based on electrochemically formed diodes.

    Science.gov (United States)

    Liu, Jiang; Engquist, Isak; Berggren, Magnus

    2014-08-13

    We report a method to construct reprogrammable circuits based on organic electrochemical (EC) p-n junction diodes. The diodes are built up from the combination of the organic conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] and a polymer electrolyte. The p-n diodes are defined by EC doping performed at 70 °C, and then stabilized at -30 °C. The reversible EC reaction allows for in situ reprogramming of the polarity of the organic p-n junction, thus enabling us to reconfigure diode circuits. By combining diodes of specific polarities dedicated circuits have been created, such as various logic gates, a voltage limiter and an AC/DC converter. Reversing the EC reaction allows in situ reprogramming of the p-n junction polarity, thus enabling reconfiguration of diode circuits, for example, from an AND gate to an OR gate. The reprogrammable circuits are based on p-n diodes defined from only two layers, the electrodes and then the active semiconductor:electrolyte composite material. Such simple device structures are promising for large-area and fully printed reconfigurable circuits manufactured using common printing tools. The structure of the reported p-n diodes mimics the architecture of and is based on identical materials used to construct light-emitting electrochemical cells (LEC). Our findings thus provide a robust signal routing technology that is easily integrated with traditional LECs.

  20. Solar spectrum rectification using nano-antennas and tunneling diodes

    Science.gov (United States)

    Dagenais, Mario; Choi, Kwangsik; Yesilkoy, Filiz; Chryssis, Athanasios N.; Peckerar, Martin C.

    2010-02-01

    Our goal is to develop a rectifying antenna (rectenna) applicable to solar spectrum energy harvesting. In particular, we aim to demonstrate viable techniques for converting portion of the solar spectrum not efficiently converted to electric power by current photovoltaic approaches. Novel design guidelines are suggested for rectifying antenna coupled tunneling diodes. We propose a new geometric field enhancement scheme in antenna coupled tunneling diodes that uses surface plasmon resonances. For this purpose, we have successfully implemented a planar tunneling diode with polysilion/SiO2/polysilcon structure. An antenna coupled asymmetric tunneling diode is developed with a pointed triangle electrode for geometric field enhancement. The geometrically asymmetric tunneling diode shows a unique asymmetric tunneling current versus voltage characteristic. Through comparison with crossover tunneling diodes, we verified that the current asymmetry is not from the work function difference between the two electrodes. Results of RF rectification tests using the asymmetric diode demonstrate that our approach is practical for energy harvesting application. Furthermore, we describe how surface plasmons can enhance the electric field across the tunnel junction, lowering the effective "turn-on" voltage of the diode, further improving rectification efficiency.

  1. Spectral control of diode lasers using external waveguide circuits

    NARCIS (Netherlands)

    Oldenbeuving, Ruud

    2013-01-01

    We investigated spectral control of diode lasers using external waveguide circuits. The purpose of this work is to investigate such external control for providing a new class of diode lasers with technologically interesting properties, such as a narrow spectral bandwidth and spectrally tunable

  2. Diode pumped solid-state laser oscillators for spectroscopic applications

    Science.gov (United States)

    Byer, R. L.; Basu, S.; Fan, T. Y.; Kozlovsky, W. J.; Nabors, C. D.; Nilsson, A.; Huber, G.

    1987-01-01

    The rapid improvement in diode laser pump sources has led to the recent progress in diode laser pumped solid state lasers. To date, electrical efficiencies of greater than 10 percent were demonstrated. As diode laser costs decrease with increased production volume, diode laser and diode laser array pumped solid state lasers will replace the traditional flashlamp pumped Nd:YAG laser sources. The use of laser diode array pumping of slab geometry lasers will allow efficient, high peak and average power solid state laser sources to be developed. Perhaps the greatest impact of diode laser pumped solid state lasers will be in spectroscopic applications of miniature, monolithic devices. Single-stripe diode-pumped operation of a continuous-wave 946 nm Nd:YAG laser with less than 10 m/w threshold was demonstrated. A slope efficiency of 16 percent near threshold was shown with a projected slope efficiency well above a threshold of 34 percent based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. The KNbO3 and periodically poled LiNbO3 appear to be the most promising.

  3. Spectral control of diode lasers using external waveguide circuits

    NARCIS (Netherlands)

    Oldenbeuving, R.M.

    2013-01-01

    We investigated spectral control of diode lasers using external waveguide circuits. The purpose of this work is to investigate such external control for providing a new class of diode lasers with technologically interesting properties, such as a narrow spectral bandwidth and spectrally tunable outpu

  4. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    Wanum, van Maurice; Lebouille, Tom; Visser, Guido; Vliet, van Frank E.

    2009-01-01

    Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are c

  5. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    Wanum, M. van; Lebouille, T.T.N.; Visser, G.C.; Vliet, F.E. van

    2009-01-01

    In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are Silicon, Gallium Arsenide and Gallium Nitride. The diodes in the diverse semiconductor technologies themselves are close in p

  6. Operation of AC Adapters Visualized Using Light-Emitting Diodes

    Science.gov (United States)

    Regester, Jeffrey

    2016-01-01

    A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

  7. Digital control of diode laser for atmospheric spectroscopy

    Science.gov (United States)

    Menzies, R. T.; Rutledge, C. W. (Inventor)

    1985-01-01

    A system is described for remote absorption spectroscopy of trace species using a diode laser tunable over a useful spectral region of 50 to 200 cm(-1) by control of diode laser temperature over range from 15 K to 100 K, and tunable over a smaller region of typically 0.1 to 10 cm(-1) by control of the diode laser current over a range from 0 to 2 amps. Diode laser temperature and current set points are transmitted to the instrument in digital form and stored in memory for retrieval under control of a microprocessor during measurements. The laser diode current is determined by a digital to analog converter through a field effect transistor for a high degree of ambient temperature stability, while the laser diode temperature is determined by set points entered into a digital to analog converter under control of the microprocessor. Temperature of the laser diode is sensed by a sensor diode to provide negative feedback to the temperature control circuit that responds to the temperature control digital to analog converter.

  8. Stacked, Filtered Multi-Channel X-Ray Diode Array

    Energy Technology Data Exchange (ETDEWEB)

    MacNeil, Lawrence P. [National Security Technologies, LLC; Dutra, Eric C. [National Security Technologies, LLC; Raphaelian, Mark; Compton, Steven [Lawrence Livermore National Laboratory; Jacoby, Barry [Lawrence Livermore National Laboratory

    2015-08-01

    This system meets the need for a low-cost, robust X-ray diode array to use for experiments in hostile environments on multiple platforms, and for experiments utilizing forces that may destroy the diode(s). Since these uses require a small size with a minimal single line-of-sight, a parallel array often cannot be used. So a stacked, filtered multi-channel X-ray diode array was developed that was called the MiniXRD. The design was modeled, built, and tested at National Security Technologies, LLC (NSTec) Livermore Operations (LO) to determine fundamental characteristics. Then, several different systems were fielded as ancillary “ridealong” diagnostics at several national facilities to allow us to iteratively improve the design and usability. Presented here are design considerations and experimental results. This filtered diode array is currently at Technical Readiness Level (TRL) 6.

  9. Fiber Optic Coupling of CW Linear Laser Diode Array

    Institute of Scientific and Technical Information of China (English)

    WANG Xiaowei; XIAO Jianwei; MA Xiaoyu; WANG Zhongming; FANG Gaozhan

    2002-01-01

    Based on a set of microoptics the output radiation from a continuous wave (CW) linear laser diode array is coupled into a multi-mode optical fiber of 400 μm diameter.The CW linear laser diode array is a 1 cm laser diode bar with 19 stripes with 100 μm aperture spaced on 500 μm centers.The coupling system contains packaged laser diode bar,fast axis collimator,slow axis collimation array,beam transformation system and focusing system.The high brightness,high power density and single fiber output of a laser diode bar is achieved.The coupling efficiency is 65% and the power density is up to 1.03×104 W/cm2.

  10. Diode and Final Focus Simulations for DARHT

    Science.gov (United States)

    Hughes, Thomas P.; Welch, Dale R.; Carlson, Randolph L.

    1997-05-01

    We have used the numerical simulation codes uc(ivory,) uc(iprop) and uc(pbguns) to simulate beam dynamics in the diode and final focus of the 4 kA, 20 MV DARHT linear accelerator. A low emittance 4 MV, 4 kA source for a 4-pulse injector was designed using uc(ivory) and uc(pbguns.) Due to the long pulse length (four 70 ns pulses over 1 μsec), we have kept the field stress to stacks. The normalized edge emittance produced by the diode optics is only ≈ 130 mm-mrad. In the final-focus region, we have used uc(iprop) to model the effect of ion emission from the target. The intense electric field of the beam at the 1 mm diameter focal spot produces substantial ion velocities, and, if the space-charge-limited current density can be supplied, significant focal spot degradation may occur due to ion space-charge. Calculations for the ITS test stand, which has a larger focal spot, show that the effect should be observable for H^+ and C^+ ion species. The effect may be lessened if there is insufficient ion density on the target to supply the space-charge-limited current density, or if the ion charge-to-mass ratio is sufficiently large.

  11. Sensitivity of resonant tunneling diode photodetectors

    Science.gov (United States)

    Pfenning, Andreas; Hartmann, Fabian; Langer, Fabian; Kamp, Martin; Höfling, Sven; Worschech, Lukas

    2016-09-01

    We have studied the sensitivity of AlGaAs/GaAs double barrier resonant tunneling diode photodetectors with an integrated GaInNAs absorption layer for light sensing at the telecommunication wavelength of λ = 1.3 μm for illumination powers from pico- to microwatts. The sensitivity decreases nonlinearly with power. An illumination power increase of seven orders of magnitude leads to a reduction of the photocurrent sensitivity from S I = 5.82 × 103 A W-1 to 3.2 A W-1. We attribute the nonlinear sensitivity-power dependence to an altered local electrostatic potential due to hole-accumulation that on the one hand tunes the tunneling current, but on the other hand affects the lifetime of photogenerated holes. In particular, the lifetime decreases exponentially with increasing hole population. The lifetime reduction results from an enhanced electrical field, a rise of the quasi-Fermi level, and an increased energy splitting within the triangular potential well. The non-constant sensitivity is a direct result of the non-constant lifetime. Based on these findings, we provide an expression that allows us to calculate the sensitivity as a function of illumination power and bias voltage, show a way to model the time-resolved photocurrent, and determine the critical power up to which the resonant tunneling diode photodetector sensitivity can be assumed constant.

  12. Charge Transport in Resonant Tunneling Double - Diodes

    Science.gov (United States)

    Diff, Karim

    With the advent of semiconductor devices with typical lengths of the order of a few nanometers and response times of a few picoseconds, the conventional methods used in device modeling have reached their limits of validity. Modern devices based on heterostructures fabricated by Molecular Beam Epitaxy (MBE) require more fundamental approaches based entirely on quantum mechanics. These generally necessitate numerical solutions and are computationally intensive. This dissertation focuses on Resonant Tunneling Double-Barrier (RTDB) diodes as the prototype of "quantum devices". A one-electron model and the effective mass approximation are used. By solving numerically the time-dependent Schrodinger equation for Gaussian wavepackets, the various time characteristics of resonant tunneling are probed. These characteristics are usually overlooked in other treatments based on the time-independent Schrodinger equation. The transit time, the build-up time and the exponential decay time are studied. The difference between these various time scales and their relative importance are discussed. A new method that takes into account the finite extent of the electron wavefunction, is proposed to compute the I-V characteristics of such devices. Results indicate a possible explanation for the discrepancy observed between experimental results and previous analyses. The effect of high frequency fields on resonant tunneling is also studied, and a method to determine the intrinsic cut-off frequency is suggested. The role of the effective mass in the determination of the characteristics of RTDB diodes is emphasized throughout this work.

  13. A new diode laser acupuncture therapy apparatus

    Science.gov (United States)

    Li, Chengwei; Huang, Zhen; Li, Dongyu; Zhang, Xiaoyuan

    2006-06-01

    Since the first laser-needles acupuncture apparatus was introduced in therapy, this kind of apparatus has been well used in laser biomedicine as its non-invasive, pain- free, non-bacterium, and safetool. The laser acupuncture apparatus in this paper is based on single-chip microcomputer and associated by semiconductor laser technology. The function like traditional moxibustion including reinforcing and reducing is implemented by applying chaos method to control the duty cycle of moxibustion signal, and the traditional lifting and thrusting of acupuncture is implemented by changing power output of the diode laser. The radiator element of diode laser is made and the drive circuit is designed. And chaos mathematic model is used to produce deterministic class stochastic signal to avoid the body adaptability. This function covers the shortages of continuous irradiation or that of simple disciplinary stimulate signal, which is controlled by some simple electronic circuit and become easily adjusted by human body. The realization of reinforcing and reducing of moxibustion is technological innovation in traditional acupuncture coming true in engineering.

  14. Generation of incoherent light from a laser diode based on the injection of an emission from a superluminescent diode

    CERN Document Server

    Takamizawa, Akifumi; Ikegami, Takeshi

    2013-01-01

    In this study, incoherent light with a spectral linewidth of 7 nm and 140 mW of power was generated from a laser diode into which incoherent light emitted from a superluminescent diode was injected with 2.7 mW of power. The spectral linewidth of the light from the laser diode was broadened to 12 nm when the diode's output power was reduced to 15 mW. In the process of transformation from single-mode laser light to incoherent light with a broad spectrum by increasing injection-light power, multimode laser oscillation and a noisy spectrum were found in the light from the laser diode. This optical system can be used not only for amplification of incoherent light but also as a coherence-convertible light source.

  15. "Diode Pumped Solid State Lasers At 2 And 3 µm"

    Science.gov (United States)

    Esterowitz, Leon

    1988-06-01

    The most attractive alternative to flashlamp pumping of solid state lasers is the diode laser. In the past two decades numerous laboratory devices have been assembled which incorporated single diode lasers, small laser diode arrays or LED's for pumping of Nd:YAG, Nd:glass and a host of other Nd lasers. The low power output, low packaging density, and extremely high cost of diode lasers prevented any serious applications for laser pumping in the past. The reason for the continued interest in this area stems from the potential dramatic increase in system efficiency and component lifetime, and reduction of thermal load of the solid-state laser material. The latter not only will reduce thereto-optic effects and therefore lead to better beam quality but also will enable an increase in pulse repetition frequency. The attractive operating parameters combined with low voltage operation and the compactness of an all solid-state laser system have a potential high payoff. The high pumping efficiency compared to flashlamps stems from the good spectral match between the laser diode emission and the rare earth activator absorption bands. A significant advantage of laser diode pumping compared to arc lamps is system lifetime and reliability. Laser diode arrays have exhibited lifetimes on the order of 10,000 hours in cw operation and 109 shots in the pulsed mode. Flashlamp life is on the order of 107 shots, and about 200 hours for cw operation. In addition, the high pump flux combined with a substantial UV content in lamp pumped systems causes material degradation in the pump cavity and in the coolant. Such problems are virtually eliminated with laser diode pump sources. The absence of high voltage pulses, high temperatures and UV radiation encountered with arc lamps leads to much more benign operating features for solid state laser systems employing laser diode pumps. Laser diode technology dates back to 1962 when laser action in GaAs diodes was first demonstrated. However, it

  16. High-current electron beam generation in a diode with a multicapillary dielectric cathode

    Science.gov (United States)

    Gleizer, J. Z.; Hadas, Y.; Gurovich, V. Tz.; Felsteiner, J.; Krasik, Ya. E.

    2008-02-01

    Results of high-current electron beam generation in an ˜200kV, ˜250ns diode with a multicapillary dielectric cathode (MCDC) assisted by either velvet-type or ferroelectric plasma sources (FPSs) are presented. Multicapillary cathodes made of cordierite, glass, and quartz glass samples were studied. It was found that the source of electrons is the plasma ejected from capillaries. The plasma parameters inside capillary channels and in the vicinity of the cathode surface were determined during the accelerating pulse using visible range spectroscopy. It was shown that glass multicapillary cathodes are characterized by less surface erosion than the cordierite cathodes. Also, it was found that multicapillary cathodes assisted by a FPS showed longer lifetime and better vacuum compatibility than multicapillary cathodes assisted by a velvet-type igniter. Finally, it was found that quartz glass MCDC assisted by FPS is characterized by almost simultaneous formation of the plasma in a cross-sectional area of the dielectric sample with respect to the beginning of the accelerating pulse. The latter is explained by intense UV radiation which synchronized formation of parallel discharges due to induced secondary electron emission.

  17. Plasma characterization on carbon fiber cathode by spectroscopic diagnostics

    Institute of Scientific and Technical Information of China (English)

    Liu Lie; Li Li-Min; Xu Qi-Fu; Chang Lei; Wen Jian-Chun

    2009-01-01

    This paper mainly investigates plasma characterization on carbon fiber cathodes with and without cesium iodide (CsI) coating powered by a~300 ns,~200 kV accelerating pulse. It was found that the CsI layers can not only improve the diode voltage,but also maintain a stable perveance.This indicates a slowly changed diode gap or a low cathode plasma expansion velocity.By spectroscopic diagnostics,in the vicinity of the cathode surface the average plasma density and temperature were found to be~3×1014 cm-3 and~5 eV,respectively,for an electron current density of~40 A/cm2.Furthermore,there exists a multicomponent plasma expansion toward the anode.The plasma expansion velocity,corresponding to the carbon and hydrogen ions,is estimated to be~1.5 cm/μs.Most notably,Cs spectroscopic line was obtained only at the distance ≤0.5 mm from the cathode surface.Carbon and hydrogen ions are obtained up to the distance of 2.5 mm from the cathode surface.Cs ions almost remain at the vicinity of the cathode surface.These results show that the addition of Cal enables a slow cathode plasma expansion toward the anode,providing a positive prospect for developing long-pulse electron beam sources.

  18. Plasma chromograninx

    DEFF Research Database (Denmark)

    Goetze, Jens P; Hilsted, Linda M; Rehfeld, Jens F

    2014-01-01

    Cardiovascular risk assessment remains difficult in elderly patients. We examined whether chromogranin A (CgA) measurement in plasma may be valuable in assessing risk of death in elderly patients with symptoms of heart failure in a primary care setting. A total of 470 patients (mean age 73 years......) were followed for 10 years. For CgA plasma measurement, we used a two-step method including a screening test and a confirmative test with plasma pre-treatment with trypsin. Cox multivariable proportional regression and receiver-operating curve (ROC) analyses were used to assess mortality risk...... of follow-up showed significant additive value of CgA confirm measurements compared with NT-proBNP and clinical variables. CgA measurement in the plasma of elderly patients with symptoms of heart failure can identify those at increased risk of short- and long-term mortality....

  19. Plasma Cleaning

    Science.gov (United States)

    Hintze, Paul E.

    2016-01-01

    NASA's Kennedy Space Center has developed two solvent-free precision cleaning techniques: plasma cleaning and supercritical carbon dioxide (SCCO2), that has equal performance, cost parity, and no environmental liability, as compared to existing solvent cleaning methods.

  20. A practical guide to handling laser diode beams

    CERN Document Server

    Sun, Haiyin

    2015-01-01

    This book offers the reader a practical guide to the control and characterization of laser diode beams.  Laser diodes are the most widely used lasers, accounting for 50% of the global laser market.  Correct handling of laser diode beams is the key to the successful use of laser diodes, and this requires an in-depth understanding of their unique properties. Following a short introduction to the working principles of laser diodes, the book describes the basics of laser diode beams and beam propagation, including Zemax modeling of a Gaussian beam propagating through a lens.  The core of the book is concerned with laser diode beam manipulations: collimating and focusing, circularization and astigmatism correction, coupling into a single mode optical fiber, diffractive optics and beam shaping, and manipulation of multi transverse mode beams.  The final chapter of the book covers beam characterization methods, describing the measurement of spatial and spectral properties, including wavelength and linewidth meas...

  1. Respiratory complications after diode-laser-assisted tonsillotomy.

    Science.gov (United States)

    Fischer, Miloš; Horn, Iris-Susanne; Quante, Mirja; Merkenschlager, Andreas; Schnoor, Jörg; Kaisers, Udo X; Dietz, Andreas; Kluba, Karsten

    2014-08-01

    Children with certain risk factors, such as comorbidities or severe obstructive sleep apnea syndrome (OSAS) are known to require extended postoperative monitoring after adenotonsillectomy. However, there are no recommendations available for diode-laser-assisted tonsillotomy. A retrospective chart review of 96 children who underwent diode-laser-assisted tonsillotomy (07/2011-06/2013) was performed. Data for general and sleep apnea history, power of the applied diode-laser (λ = 940 nm), anesthesia parameters, the presence of postoperative respiratory complications and postoperative healing were evaluated. After initially uncomplicated diode-laser-assisted tonsillotomy, an adjustment of post-anesthesia care was necessary in 16 of 96 patients due to respiratory failure. Respiratory complications were more frequent in younger children (3.1 vs. 4.0 years, p = 0.049, 95 % CI -1.7952 to -0.0048) and in children who suffered from nocturnal apneas (OR = 5.00, p diode-laser power higher than 13 W could be identified as a risk factor for the occurrence of a postoperative oropharyngeal edema (OR = 3.45, p diode-laser-assisted tonsillotomy. We recommend a reduced diode-laser power (<13 W) to reduce oropharyngeal edema.

  2. Additional electric field in real trench MOS barrier Schottky diode

    Science.gov (United States)

    Mamedov, R. K.; Aslanova, A. R.

    2016-04-01

    In real trench MOS barrier Schottky diode (TMBS diode) additional electric field (AEF) the whole is formed in the near contact region of the semiconductor and its propagation space is limited with the barrier metal and the metallic electrodes of MOS structures. Effective potential barrier height TMBS diode is formed via resulting electric field of superposition AEF and electric field of space charge region (SCR) semiconductor. The dependence of the resulting electric field intensity of the distance towards the inside the semiconductor is nonlinear and characterized by a peak at a certain distance from the interface. The thickness of the SCR in TMBS diode becomes equal to the trench depth. Force and energy parameters of the AEF, and thus resulting electric field in the SCR region, become dependent on the geometric design parameters TMBS diode. The forward I-V characteristic TMBS diode is described by the thermionic emission theory as in conventional flat Scottky diode, and in the reverse bias, current is virtually absent at initial voltage, appears abruptly at a certain critical voltage.

  3. Plasma confinement

    CERN Document Server

    Hazeltine, R D

    2003-01-01

    Detailed and authoritative, this volume examines the essential physics underlying international research in magnetic confinement fusion. It offers readable, thorough accounts of the fundamental concepts behind methods of confining plasma at or near thermonuclear conditions. Designed for a one- or two-semester graduate-level course in plasma physics, it also represents a valuable reference for professional physicists in controlled fusion and related disciplines.

  4. Light-Emitting Diodes: Phosphorescent Nanocluster Light-Emitting Diodes (Adv. Mater. 2/2016).

    Science.gov (United States)

    Kuttipillai, Padmanaban S; Zhao, Yimu; Traverse, Christopher J; Staples, Richard J; Levine, Benjamin G; Lunt, Richard R

    2016-01-13

    On page 320, R. R. Lunt and co-workers demonstrate electroluminescence from earth-abundant phosphorescent metal halide nanoclusters. These inorganic emitters, which exhibit rich photophysics combined with a high phosphorescence quantum yield, are employed in red and near-infrared light-emitting diodes, providing a new platform of phosphorescent emitters for low-cost and high-performance light-emission applications.

  5. Current transport mechanisms in mercury cadmium telluride diode

    Energy Technology Data Exchange (ETDEWEB)

    Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [Institute of Defence Scientists and Technologists, CFEES Complex, Brig. S. K. Majumdar Marg, Delhi 110054 (India); Li, Qing; He, Jiale; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); He, Kai; Lin, Chun [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

    2016-08-28

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  6. Current transport mechanisms in mercury cadmium telluride diode

    Science.gov (United States)

    Gopal, Vishnu; Li, Qing; He, Jiale; He, Kai; Lin, Chun; Hu, Weida

    2016-08-01

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I-V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I-V characteristics have been modelled over a range of gate voltages from -9 V to -2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I-V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from -3 V to -5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  7. Role of electron blocking layer in III-nitride laser diodes and light-emitting diodes

    Science.gov (United States)

    Kuo, Yen-Kuang; Chang, Jih-Yuan; Chen, Mei-Ling

    2010-02-01

    A high energy bandgap electron blocking layer (EBL) just behind the active region is conventionally used in the nitride-based laser diodes (LDs) and light-emitting diodes (LEDs) to improve the confinement capability of electrons within the quantum wells. Nevertheless, the EBL may also act as a potential barrier for the holes and cause non-uniform distribution of holes among quantum wells. A most recent study by Han et al. (Appl. Phys. Lett. 94, 231123, 2009) reported that, because of the blocking effect for holes, the InGaN LED device without an EBL has slighter efficiency droop and higher light output at high level of current injection when compared with the LED device with an EBL. This result seems to contradict with the original intention of using the EBL. Furthermore, findings from our previous studies (IEEE J. Lightwave Technol. 26, 329, 2008; J. Appl. Phys. 103, 103115, 2008; Appl. Phys. Lett. 91, 201118, 2007) indicated that the utilization of EBL is essential for the InGaN laser diodes. Thus, in this work, the optical properties of the InGaN LDs and LEDs are explored numerically with the LASTIP simulation program and APSYS simulation program, respectively. The analyses focus particularly on the light output power, energy band diagrams, recombination rates, distribution of electrons and holes in the active region, and electron overflow. This study will then conclude with a discussion of the effect of EBL on the optical properties of the InGaN LDs and LEDs.

  8. Bulk molybdenum field emitters by inductively coupled plasma etching.

    Science.gov (United States)

    Zhu, Ningli; Cole, Matthew T; Milne, William I; Chen, Jing

    2016-12-07

    In this work we report on the fabrication of inductively coupled plasma (ICP) etched, diode-type, bulk molybdenum field emitter arrays. Emitter etching conditions as a function of etch mask geometry and process conditions were systematically investigated. For optimized uniformity, aspect ratios of >10 were achieved, with 25.5 nm-radius tips realised for masks consisting of aperture arrays some 4.45 μm in diameter and whose field electron emission performance has been herein assessed.

  9. IR detection and energy harvesting using antenna coupled MIM tunnel diodes

    Science.gov (United States)

    Yesilkoy, Filiz

    -wave dipole-like bow-tie antennas are fabricated using simulation-optimized geometries. The major challenge of this work is designing and fabricating MIM diodes and coupled antennas with internal capacitances and resistances small enough to allow response in the desired frequency range (˜30 THz) and yet capable of efficiently coupling to the incident radiation. It is crucial to keep the RC time constant of the tunnel junction small to achieve the requisite cut-off frequency and adequate rectification efficiency. Moreover, a low junction resistance is necessary to load the coupled AC power across the MIM junction. For energy harvesting applications, the device has to operate without an external bias, which requires asymmetry at the zero bias operation point. To address these requirements, the MIM tunnel junction is established so that one electrode has a field enhancing sharp tip (cathode) and the other is a rectangular patch. This asymmetric geometry not only offers asymmetric current-voltage behavior at the zero bias point, but also it decouples the junction resistance and capacitance by concentrating the charge transport in a small volume around the tip. Various fabrication methods are developed in order to create small junction area (= low parasitic capacitance), low junction resistance (= effective power coupling through antenna), asymmetry (= zero bias operation), high fabrication yield and low cost ACMIM tunnel diodes. High resolution fabrication needs are accomplished by electron beam lithography and nano-accuracy in the junction area is achieved by employing dose modifying proximity effect correction and critical alignment methods. Our Ni/NiOx/Ni ACMIM diodes with an optimized insulation layer created with O2 plasma oxidation are the most successful devices presented to date. A novel fabrication technique called "strain assisted self lift-off process" is used to achieve small junction area devices without relying on lithographic resolution. This technique eliminates

  10. Forward gated-diode method for parameter extraction of MOSFETs*

    Institute of Scientific and Technical Information of China (English)

    Zhang Chenfei; Ma Chenyue; Guo Xinjie; Zhang Xiufang; He Jin; Wang Guozeng; Yang Zhang; Liu Zhiwei

    2011-01-01

    The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously. First, the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination-generation (R-G) current are derived from the device physics. Then the peak R-G current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction. The results from the simulation data demonstrate excellent agreement with those extracted from the forward gated-diode method.

  11. Bipolar Host Materials for Organic Light-Emitting Diodes.

    Science.gov (United States)

    Yook, Kyoung Soo; Lee, Jun Yeob

    2016-02-01

    It is important to balance holes and electrons in the emitting layer of organic light-emitting diodes to maximize recombination efficiency and the accompanying external quantum efficiency. Therefore, the host materials of the emitting layer should transport both holes and electrons for the charge balance. From this perspective, bipolar hosts have been popular as the host materials of thermally activated delayed fluorescent devices and phosphorescent organic light-emitting diodes. In this review, we have summarized recent developments of bipolar hosts and suggested perspectives of host materials for organic light-emitting diodes.

  12. Diode-pumped Alexandrite ring laser for lidar applications

    Science.gov (United States)

    Munk, A.; Jungbluth, B.; Strotkamp, M.; Hoffmann, H.-D.; Poprawe, R.; Höffner, J.

    2016-03-01

    We present design and performance data of a diode-pumped Q-switched Alexandrite ring laser in the millijoule regime, which is longitudinally pumped by laser diode bar modules in the red spectral range. As a first step, a linear resonator was designed and characterized in qcw operation as well as in Q-switched operation. Based on these investigations, two separate linear cavities were set up, each with one Alexandrite crystal longitudinally pumped by one diode module. The two cavities are fused together and form a ring cavity which yields up to 6 mJ pulse burst energy in the qcw regime at 770 nm.

  13. Tapered diode laser pumped 946 nm Nd:YAG laser

    DEFF Research Database (Denmark)

    Cheng, Haynes Pak Hay; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2009-01-01

    We successfully implemented a 946 nm Nd:YAG laser based on a 808 nm tapered diode pump laser. The tapered diode is developed at the Ferdinand-Braun-Institute fur Hochstfrequenztechnik in Germany. Figure 2 shows the experimental setup and results of each pump source coupled into a 1.5 mm crystal...... laser, we show that tapered diode laser pumping potentially increase the power of 946 nm lasers by a factor of two and reduce the threshold by a factor of three....

  14. Physical based Schottky barrier diode modeling for THz applications

    DEFF Research Database (Denmark)

    Yan, Lei; Krozer, Viktor; Michaelsen, Rasmus Schandorph;

    2013-01-01

    In this work, a physical Schottky barrier diode model is presented. The model is based on physical parameters such as anode area, Ohmic contact area, doping profile from epitaxial (EPI) and substrate (SUB) layers, layer thicknesses, barrier height, specific contact resistance, and device...... temperature. The effects of barrier height lowering, nonlinear resistance from the EPI layer, and hot electron noise are all included for accurate characterization of the Schottky diode. To verify the diode model, measured I-V and C-V characteristics are compared with the simulation results. Due to the lack...

  15. Diode laser sensor for process control and environmental monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Zaatar, Y.; Bechara, J.; Khoury, A.; Zaouk, D. [Lebanese Univ., Physics Dept., Fanar (Lebanon); Charles, J.-P. [Metz Univ., L.I.C.M., Metz, 57 (France)

    2000-04-01

    Absorption spectroscopy with tunable diode lasers (TDLAS) in the infrared region is a well-known technique for the chemical analysis of gas mixtures. The laser provides a high selectivity, which is important in industrial environments such as in-line stack monitoring, where complex gas mixtures are present. A wavelength tunable diode laser in the near infrared region has been utilised as a light source in absorption measurements of air pollution resulting from energy usage for industry. The emission frequency can be varied over a relatively wide spectral range by changing the current and temperature of the diode. (Author)

  16. Frequency Comb Assisted Broadband Precision Spectroscopy with Cascaded Diode Lasers

    CERN Document Server

    Liu, Junqiu; Pfeiffer, Martin H P; Kordts, Arne; Kamel, Ayman N; Guo, Hairun; Geiselmann, Michael; Kippenberg, Tobias J

    2016-01-01

    Frequency comb assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this letter we present a novel method using cascaded frequency agile diode lasers, which allows extending the measurement bandwidth to 37.4 THz (1355 to 1630 nm) at MHz resolution with scanning speeds above 1 THz/s. It is demonstrated as a useful tool to characterize a broadband spectrum for molecular spectroscopy and in particular it enables to characterize the dispersion of integrated microresonators up to the fourth order.

  17. High power collimated diode laser stack

    Institute of Scientific and Technical Information of China (English)

    LIU Yuan-yuan; FANG Gao-zhan; MA Xiao-yu; LIU Su-ping; FENG Xiao-ming

    2006-01-01

    A high power collimated diode laser stack is carried out based on fast-axis collimation and stack packaging techniques.The module includes ten typical continuous wave (cw) bars and the total output power can be up to 368W at 48.6A.Using a cylindrical lens as the collimation elements,we can make the fast-axis divergence and the slow-axis divergence are 0.926 40 and 8.2060 respectively.The light emitting area is limited in a square area of 18.3 mm×11 mm.The module has the advantage of high power density and offers a wide potential applications in pumping and material processing.

  18. Superluminescent diode and single mode laser

    Energy Technology Data Exchange (ETDEWEB)

    Kwong, S.K.; Lau, K.Y.; Bar-Chaim, N.; Ury, I.

    1988-08-16

    A buried heterostructure superluminescent diode comprising: an elongated active gain layer having an output end and a non-output end; a first n-type cladding layer on one face of the gain layer and a second p-type cladding layer on the other face of the gain layer for pumping the active gain layer, the cladding layer having a lower index of refraction than the active gain layer; a blocking layer having a lower index of refraction than the active gain layer along each longitudinal edge of the active gain layer, a transparent window at the output end of the active gain layer; an antireflective coating on the window layer; and a light absorbing medium at the non-output end of the active gain layer.

  19. Terahertz optoelectronics with surface plasmon polariton diode.

    Science.gov (United States)

    Vinnakota, Raj K; Genov, Dentcho A

    2014-05-09

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

  20. Active coherent beam combining of diode lasers.

    Science.gov (United States)

    Redmond, Shawn M; Creedon, Kevin J; Kansky, Jan E; Augst, Steven J; Missaggia, Leo J; Connors, Michael K; Huang, Robin K; Chann, Bien; Fan, Tso Yee; Turner, George W; Sanchez-Rubio, Antonio

    2011-03-15

    We have demonstrated active coherent beam combination (CBC) of up to 218 semiconductor amplifiers with 38.5 W cw output using up to eleven one-dimensional 21-element individually addressable diode amplifier arrays operating at 960 nm. The amplifier array elements are slab-coupled-optical-waveguide semiconductor amplifiers (SCOWAs) set up in a master-oscillator-power-amplifier configuration. Diffractive optical elements divide the master-oscillator beam to seed multiple arrays of SCOWAs. A SCOWA was phase actuated by adjusting the drive current to each element and controlled using a stochastic-parallel-gradient-descent (SPGD) algorithm for the active CBC. The SPGD is a hill-climbing algorithm that maximizes on-axis intensity in the far field, providing phase locking without needing a reference beam.

  1. Destructive Single-Event Failures in Diodes

    Science.gov (United States)

    Casey, Megan C.; Gigliuto, Robert A.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Kim, Hak; Chen, Dakai; Phan, Anthony M.; LaBel, Kenneth A.

    2013-01-01

    In this summary, we have shown that diodes are susceptible to destructive single-event effects, and that these failures occur along the guard ring. By determining the last passing voltages, a safe operating area can be derived. By derating off of those values, rather than by the rated voltage, like what is currently done with power MOSFETs, we can work to ensure the safety of future missions. However, there are still open questions about these failures. Are they limited to a single manufacturer, a small number, or all of them? Is there a threshold rated voltage that must be exceeded to see these failures? With future work, we hope to answer these questions. In the full paper, laser results will also be presented to verify that failures only occur along the guard ring.

  2. Coupled Resonator Vertical Cavity Laser Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Choquette, K.D.; Chow, W.W.; Fischer, A.J.; Allerman, A.A.; Hou, H.Q.; Geib, K.M.

    1999-07-22

    For many applications, the device performance of edge emitting semiconductor lasers can be significantly improved through the use of multiple section devices. For example, cleaved coupled cavity (C3) lasers have been shown to provide single mode operation, wavelength tuning, high speed switching, as well as the generation of short pulses via mode-locking and Q-switching [1]. Using composite resonators within a vertical cavity laser opens up new possibilities due to the unique ability to tailor the coupling between the monolithic cavities, incorporate passive or active resonators which are spectrally degenerate or detuned, and to fabricate these devices in 2-dimensional arrays. Composite resonator vertical cavity lasers (CRVCL) have been examined using optical pumping and electrical injection [2-5]. We report on CRVCL diodes and show that efficient modulation of the laser emission can be achieved by either forward or reverse biasing the passive cavity within a CRVCL.

  3. Contact Whiskers for Millimeter Wave Diodes

    Science.gov (United States)

    Kerr, A. R.; Grange, J. A.; Lichtenberger, J. A.

    1978-01-01

    Several techniques are investigated for making short conical tips on wires (whiskers) used for contacting millimeter-wave Schottky diodes. One procedure, using a phosphoric and chromic acid etching solution (PCE), is found to give good results on 12 microns phosphor-bronze wires. Full cone angles of 60 degrees-80 degrees are consistently obtained, compared with the 15 degrees-20 degrees angles obtained with the widely used sodium hydroxide etch. Methods are also described for cleaning, increasing the tip diameter (i.e. blunting), gold plating, and testing the contact resistance of the whiskers. The effects of the whisker tip shape on the electrical resistance, inductance, and capacitance of the whiskers are studied, and examples given for typical sets of parameters.

  4. Light-emitting diodes for analytical chemistry.

    Science.gov (United States)

    Macka, Mirek; Piasecki, Tomasz; Dasgupta, Purnendu K

    2014-01-01

    Light-emitting diodes (LEDs) are playing increasingly important roles in analytical chemistry, from the final analysis stage to photoreactors for analyte conversion to actual fabrication of and incorporation in microdevices for analytical use. The extremely fast turn-on/off rates of LEDs have made possible simple approaches to fluorescence lifetime measurement. Although they are increasingly being used as detectors, their wavelength selectivity as detectors has rarely been exploited. From their first proposed use for absorbance measurement in 1970, LEDs have been used in analytical chemistry in too many ways to make a comprehensive review possible. Hence, we critically review here the more recent literature on their use in optical detection and measurement systems. Cloudy as our crystal ball may be, we express our views on the future applications of LEDs in analytical chemistry: The horizon will certainly become wider as LEDs in the deep UV with sufficient intensity become available.

  5. Model for topological phononics and phonon diode

    Science.gov (United States)

    Liu, Yizhou; Xu, Yong; Zhang, Shou-Cheng; Duan, Wenhui

    2017-08-01

    The quantum anomalous Hall effect, an exotic topological state first theoretically predicted by Haldane and recently experimentally observed, has attracted enormous interest for low-power-consumption electronics. In this work, we derived a Schrödinger-like equation of phonons, where topology-related quantities, time-reversal symmetry, and its breaking can be naturally introduced similar to the process for electrons. Furthermore, we proposed a phononic analog of the Haldane model, which makes the novel quantum (anomalous) Hall-like phonon states characterized by one-way gapless edge modes immune to scattering. The topologically nontrivial phonon states are useful not only for conducting phonons without dissipation but also for designing highly efficient phononic devices, like an ideal phonon diode, which could find important applications in future phononics.

  6. Study of the prebreakdown stage of a gas discharge in a diode with point cathode by laser probing

    Science.gov (United States)

    Parkevich, E. V.; Tkachenko, S. I.; Agafonov, A. V.; Mingaleev, A. R.; Romanova, V. M.; Shelkovenko, T. A.; Pikuz, S. A.

    2017-04-01

    The prebreakdown stage of a gas discharge in a diode with strongly overloaded cathode is studied by laser methods (by simultaneous use of multiframe interferometry and shadow and schlieren photographing) at atmospheric pressure. The spatial resolution of the methods is about 20 μm. A probing pulse of a laser (LS-2151 Nd: YAG laser with a half amplitude duration of 70 ps and a pulse energy of up to 40 mJ) is synchronized with a voltage pulse with accuracy of about 1 ns. High field strength at the cathode is achieved due to the use of thin individual metal tips on the electrodes. It is shown that the initial stage of breakdown of a discharge gap is accompanied by the emergence of a dense plasma cloud at the end of a tip with electron density of about 5 × 1019 cm-3 with a size of tens of microns, as well as by a sharp increase in the total current through the diode. After the emergence of a dense plasma cloud at the end of a cathode tip, a similar cloud is formed on the surface of the anode; sometime later, these clouds join together and form a tubular current channel. The dynamics of the breakdown, as well as the parameters of the plasma are studied by the abovementioned techniques in three independent optical channels.

  7. Optical Characterization of Plasma Generated in a Commercial Grade Plasma Etching System

    Science.gov (United States)

    Hardy, Ashley; Drake, Dereth

    2015-11-01

    The use of plasma for etching and cleaning of many types of metal surfaces is becoming more prominent in industry. This is primarily due to the fact that plasma etching can reduce the amount of time necessary to clean/etch the surface and does not require large amounts of environmentally hazardous chemicals. Most plasma etching systems are designed and built in academic institutions. These systems provide reasonable etching rates and easy accessibility for monitoring plasma parameters. The downside is that the cost is typically high. Recently a number of commercial grade plasma etchers have been introduced on the market. These etching systems cost near a fraction of the price, making them a more economical choice for researchers in the field. However, very few academics use these devices because their effectiveness has not yet been adequately verified in the current literature. We will present the results from experiments performed in a commercial grade plasma etching system, including analysis of the pulse characteristics observed by a photo diode and the plasma parameters obtained with optical emission spectroscopy.

  8. On the intrinsic moisture permeation rate of remote microwave plasma-deposited silicon nitride layers

    NARCIS (Netherlands)

    Assche, F.J.H. Van; Unnikrishnan, S.; Michels, J.J.; Mol, A.M.B. van; Weijer, P. van de; Sanden, M.C.M. van de; Creatore, M.

    2014-01-01

    We report on a low substrate temperature (110°C) remote microwave plasma-enhanced chemical vapor deposition (PECVD) process of silicon nitride barrier layers against moisture permeation for organic light emitting diodes (OLEDs) and other moisture sensitive devices such as organic photovoltaic cells

  9. plasma treatment

    Directory of Open Access Journals (Sweden)

    Puač Nevena

    2014-11-01

    Full Text Available In this paper we will present results for plasma sterilization of planktonic samples of two reference strains of bacteria, Pseudomonas aeruginosa ATCC 27853 and Enterococcus faecalis ATCC 29212. We have used a plasma needle as a source of non-equilibrium atmospheric plasma in all treatments. This device is already well characterized by OES, derivative probes and mass spectrometry. It was shown that power delivered to the plasma is bellow 2 W and that it produces the main radical oxygen and nitrogen species believed to be responsible for the sterilization process. Here we will only present results obtained by electron paramagnetic resonance which was used to detect the OH, H and NO species. Treatment time and power delivered to the plasma were found to have the strongest influence on sterilization. In all cases we have observed a reduction of several orders of magnitude in the concentration of bacteria and for the longest treatment time complete eradication. A more efficient sterilization was achieved in the case of gram negative bacteria.

  10. Plasma metallization

    CERN Document Server

    Crowther, J M

    1997-01-01

    Many methods are currently used for the production of thin metal films. However, all of these have drawbacks associated with them, for example the need for UHV conditions, high temperatures, exotic metal precursors, or the inability to coat complex shaped objects. Reduction of supported metal salts by non-isothermal plasma treatment does not suffer from these drawbacks. In order to produce and analyse metal films before they become contaminated, a plasma chamber which could be attached directly to a UHV chamber with XPS capability was designed and built. This allowed plasma treatment of supported metal salts and surface analysis by XPS to be performed without exposure of the metal film to the atmosphere. Non-equilibrium plasma treatment of Nylon 66 supported gold(lll) chloride using hydrogen as the feed gas resulted in a 95% pure gold film, the remaining 5% of the film being carbon. If argon or helium were used as the feed gases during plasma treatment the resultant gold films were 100% pure. Some degree of s...

  11. InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes

    OpenAIRE

    Krishnamoorthy, Sriram; Akyol, Fatih; Rajan, Siddharth

    2014-01-01

    InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer thereby requiring less top metal contact coverage on the surface. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 x 10-2 ohm cm2 and a higher light output power are measured in tunnel junction LED. A low resistance of 5 x 10-4 ohm cm2 was measur...

  12. Modeling the effects of anode secondary electron emission on transmitted current in crossed-field diodes

    Science.gov (United States)

    Gopinath, Venkatesh; Vanderberg, Bo

    1996-11-01

    Recent experimental measurements of transmitted current in a crossed-field switch by Vanderberg and Eninger ( B. H. Vanderberg and J. E. Eninger, ``Space-charge limited current cut-off in crossed fields,'' presented at IEEE ICOPS'95, Madison, Wi. ) have shown that the measured values of transmitted current are significantly smaller than the theoretically predicted limit. The experiments also showed larger decrease in transmitted current for higher magnetic fields, implying an effect due to the higher angle of incidence of incident electrons (i.e., at values of B closer to B_H). Studies by Verboncoeur and Birdsall ( J. P. Verboncoeur and C. K. Birdsall. ``Rapid current transition in a crossed-field diode,'' Phys. Plasmas 3) 3, March 1996. have shown that even small amount ( < 1%) of over injection in a crossed-field diode near cut-off led to substantial decrease in transmitted current. In our current work, we show that the same effect can be triggered by the presence of secondary electron emission from the anode. This study models the dependence of emission upon incident electron angle and energy. Since the yield of secondary electrons increases with incident angle, this model follows the experimental results as B approaches B_Hull accurately. This work was supported in part by ONR under grant FD-N00014-90-J-1198

  13. Thermal stability of boron nitride/silicon p-n heterojunction diodes

    Energy Technology Data Exchange (ETDEWEB)

    Teii, Kungen, E-mail: teii@asem.kyushu-u.ac.jp; Mizusako, Yusei; Hori, Takuro [Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Matsumoto, Seiichiro [Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Exploratory Materials Research Laboratory for Energy and Environment, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2015-10-21

    Heterojunctions of p-type cubic boron nitride (cBN) and n-type silicon with sp{sup 2}-bonded BN (sp{sup 2}BN) interlayers are fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition, and their rectification properties are studied at temperatures up to 573 K. The rectification ratio is increased up to the order of 10{sup 5} at room temperature by optimizing the thickness of the sp{sup 2}BN interlayer and the cBN fraction for suppressing the reverse leakage current. A highly rectifying p-type cBN/thick sp{sup 2}BN/n-type silicon junction diode shows irreversible rectification properties mainly characterized by a marked decrease in reverse current by an order of magnitude in an initial temperature ramp/down cycle. This irreversible behavior is much more reduced by conducting the cycle twice or more. The temperature-dependent properties confirm an overall increase in effective barrier heights for carrier injection and conduction by biasing at high temperatures, which consequently increases the thermal stability of the diode performance.

  14. High-speed and efficient silicon modulator based on forward-biased pin diodes

    Directory of Open Access Journals (Sweden)

    Suguru eAkiyama

    2014-11-01

    Full Text Available Silicon modulators, which use the free-carrier-plasma effect, were studied, both analytically and experimentally. It was demonstrated that the loss-efficiency product, a-VpL, was a suitable figure of merit for silicon modulators that enabled their intrinsic properties to be compared. Subsequently, the dependence of VpL on frequency was expressed by using the electrical parameters of a phase shifter when the modulator was operated by assuming a simple driving configuration. A diode-based modulator operated in forward biased mode was expected from analyses to provide more efficient operation than that in reversed mode at high frequencies due to its large capacitance. We obtained an a-VpL of 9.5 dB-V at 12.5 GHz in experiments by using the fabricated phase shifter with pin diodes operated in forward biased mode. This a-VpL was comparable to the best modulators operated in depletion mode. The modulator exhibited a clear eye opening at 56 Gb/s operated by 2 V peak-to-peak signals that was achieved by incorporating such a phase shifter into a ring resonator.

  15. Nanotexturing of GaN light-emitting diode material through mask-less dry etching

    Energy Technology Data Exchange (ETDEWEB)

    Dylewicz, Rafal; Khokhar, Ali Z; Rahman, Faiz [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Wasielewski, Radoslaw; Mazur, Piotr, E-mail: Faiz.Rahman@glasgow.ac.uk [Institute of Experimental Physics, University of Wroclaw, plac Maxa Borna 9, 50-204 Wroclaw (Poland)

    2011-02-04

    We describe a new technique for random surface texturing of a gallium nitride (GaN) light-emitting diode wafer through a mask-less dry etch process. This involves depositing a sub-monolayer film of silica nanospheres (typical diameter of 200 nm) and then subjecting the coated wafer to a dry etch process with enhanced physical bombardment. The silica spheres acting as nanotargets get sputtered and silica fragments are randomly deposited on the GaN epi-layer. Subsequently, the reactive component of the dry etch plasma etches through the exposed GaN surface. Silica fragments act as nanoparticles, locally masking the underlying GaN. The etch rate is much reduced at these sites and consequently a rough topography develops. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) inspections show that random topographic features at the scale of a few tens of nanometres are formed. Optical measurements using angle-resolved photoluminescence show that GaN light-emitting diode material thus roughened has the capability to extract more light from within the epilayers.

  16. Nanotexturing of GaN light-emitting diode material through mask-less dry etching

    Science.gov (United States)

    Dylewicz, Rafal; Khokhar, Ali Z.; Wasielewski, Radoslaw; Mazur, Piotr; Rahman, Faiz

    2011-02-01

    We describe a new technique for random surface texturing of a gallium nitride (GaN) light-emitting diode wafer through a mask-less dry etch process. This involves depositing a sub-monolayer film of silica nanospheres (typical diameter of 200 nm) and then subjecting the coated wafer to a dry etch process with enhanced physical bombardment. The silica spheres acting as nanotargets get sputtered and silica fragments are randomly deposited on the GaN epi-layer. Subsequently, the reactive component of the dry etch plasma etches through the exposed GaN surface. Silica fragments act as nanoparticles, locally masking the underlying GaN. The etch rate is much reduced at these sites and consequently a rough topography develops. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) inspections show that random topographic features at the scale of a few tens of nanometres are formed. Optical measurements using angle-resolved photoluminescence show that GaN light-emitting diode material thus roughened has the capability to extract more light from within the epilayers.

  17. Enhanced performance thermal diode via thermal boundary resistance at nanoscale

    Science.gov (United States)

    Tovar-Padilla, M.; Licea-Jimenez, L.; Pérez-Garcia, S. A.; Alvarez-Quintana, J.

    2015-08-01

    Hypothetically, a thermal rectifier is a device which leads a greater heat flux in one direction than another one, similarly as the electrical diode works for the electrical flux. Here, a drastic increment in the rectification factor has been obtained in nanoscale layered thermal diodes due to the effect of thermal boundary resistance present on an asymmetrical stack of nanofilms. Measurements show a thermal rectification factor as large as 3.3 under a temperature bias well below 1 K, which is the biggest thermal rectification factor reported at room temperature compared to previously reported thermal diodes so far. According to the direction of the applied heat flux, the observed impact of the thermal boundary resistance on the device is manifested through the presence of an asymmetric temperature rise along the heat transfer axis. Such effect provides an alternative route for the development of high performance thermal diodes.

  18. Response time of light emitting diode-logarithmic electrometer

    Science.gov (United States)

    Acharya, Y. B.; Vyavahare, P. D.

    1998-02-01

    In a logarithmic electrometer which uses a transistor as a nonlinear element, a capacitance is generally connected across the feedback element of the operational amplifier. This stabilizes the loop but degrades the response at low current levels. However the stability problem is not so serious when a junction diode is used. In the present work an attempt was made to study the response time of a logarithmic electrometer which uses a light emitting diode (LED) as a nonlinear element and without external capacitance. The calculated values of rise time are based on an equivalent circuit with a depletion layer capacitance and voltage dependent conductance. These values are found to be in reasonable agreement with the experimentally measured values. This study will be useful in the estimation of dynamical errors in logarithmic electrometers using junction diode/LED, LED photometers and will be helpful in the techniques for improvements of the response time of logarithmic electrometers using a junction diode, particularly at low currents.

  19. Organic light-emitting diodes: High-throughput virtual screening

    Science.gov (United States)

    Hirata, Shuzo; Shizu, Katsuyuki

    2016-10-01

    Computer networks, trained with data from delayed-fluorescence materials that have been successfully used in organic light-emitting diodes, facilitate the high-speed prediction of good emitters for display and lighting applications.

  20. Pulse-Width Jitter Measurement for Laser Diode Pulses

    Institute of Scientific and Technical Information of China (English)

    TANG Jun-Hua; WANG Yun-Cai

    2006-01-01

    @@ Theoretical analysis and experimental measurement of pulse-width jitter of diode laser pulses are presented. The expression of pulse power spectra with all amplitude jitter, timing jitter and pulse-width jitter is deduced.

  1. Future Solid State Lighting using LEDs and Diode Lasers

    DEFF Research Database (Denmark)

    Petersen, Paul Michael

    2014-01-01

    significant savings. Solid state lighting (SSL) based on LEDs is today the most efficient light source for generation of high quality white light. Diode lasers, however, have the potential of being more efficient than LEDs for the generation of white light. A major advantage using diode lasers for solid state...... diodes (LEDs). Blue emitting 445-460 nm LED chips with conversion in phosphorescent materials have undergone tremendous development in the last decade with ultra high efficiencies. However, the technology suffers from a decrease in efficiency at high input current densities, known as the “efficiency...... and non-radiative recombination could be the origins. Recently, Auger recombination was proposed as the dominant mechanism for efficiency droop. In the talk we discuss the mechanisms of the efficiency droop in LEDs and we show how this problem can be eliminated in laser diodes. With the introduction...

  2. Differential Diode Laser Sensor for High-Purity Oxygen Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A compact portable sensor for determining the purity of oxygen concentrations near 100 percent is proposed based on differential absorption of two beams from a diode...

  3. Active Stabilization of a Diode Laser Injection Lock

    CERN Document Server

    Saxberg, Brendan; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  4. Active graphene-silicon hybrid diode for terahertz waves.

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-11

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  5. Active stabilization of a diode laser injection lock

    Science.gov (United States)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-06-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  6. The Adjunctive Soft-Tissue Diode Laser in Orthodontics.

    Science.gov (United States)

    Borzabadi-Farahani, Ali

    2017-04-01

    Lasers are a relatively new addition to the orthodontist's armamentarium. This article reviews the fundamental basic science of available soft-tissue lasers, with an emphasis on diode lasers, and discusses various adjunct applications of the diode laser for soft-tissue orthodontic procedures. Diode lasers function by cutting with an initiated hot tip and produce minimal to no interaction with healthy dental hard tissue, making them suitable for soft-tissue procedures. The contact cutting mode provides enhanced bloodless site visibility and facility to perform delicate soft tissue procedures, which is important in areas with difficult access. Such adjunctive uses include laser gingivectomy to improve oral hygiene or bracket positioning, esthetic laser gingival recontouring, and laser exposure of superficially impacted teeth. Selected cases treated with a 940-nm indium-gallium-arsenide-phosphide (InGaAsP) diode laser will be presented.

  7. Active graphene–silicon hybrid diode for terahertz waves

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-01-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene–silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices. PMID:25959596

  8. Femtosecond soliton diode on heterojunction Bragg-grating structure

    CERN Document Server

    Deng, Zhigui; Li, Hongji; Fu, Shenhe; Liu, Yikun; Xiang, Ying; Li, Yongyao

    2016-01-01

    We numerically propose a scheme for realizing an all-optical femtosecond soliton diode based on a tailored heterojunction Bragg grating, which is designed by two spatially asymmetric chirped cholesteric liquid crystals. Our simulations demonstrate that with the consideration of optical nonlinearity, not only the femtosecond diode effect with nonreciprocal transmission ratio up to 120 can be achieved, but also the optical pulse evolving into soliton which maintains its shape during propagation through the sample is observed. Further, the influence of pulse width and the carrier wavelength to the femtosecond diode effect is also discussed in detail. Our demonstrations might suggest a new direction for experimentally realizing the femtosecond soliton diode based on the cholesteric liquid crystals.

  9. An all MMIC Replacement for Gunn Diode Oscillators Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to replace the Gunn Diode Oscillators (GDOs) in NASA?s millimeter- and submillimeter-wave sensing instruments. Our new solution will rely on modern and...

  10. Active multi-mode-interferometer broadband superluminescent diodes

    Science.gov (United States)

    Feifei, Wang; Peng, Jin; Ju, Wu; Yanhua, Wu; Fajie, Hu; Zhanguo, Wang

    2016-01-01

    We report a new quantum dot superluminescent diode with a new device structure. In this device, a multi-mode-interferometer configuration and a J-bend structure were monolithically integrated. Owing to the multi-mode-interferometer structure, the superluminescent diode exhibits 60% increase in output power and 43% reduction in the differential resistance compared with the uniform waveguide width superluminescent diode fabricated from the same wafer. Our device produces an emission spectrum as wide as 103.7 nm with an output power of 2.5 mW at 600 mA continue-wave injection current. This broadband emission spectrum makes the axial resolution of the optical coherence tomography system employing the superluminescent diode to 6 μm in theory, which is high enough for most tissue imaging. Project supported by the National Natural Science Foundation of China (No. 61274072) and the National High Technology Research and Development Program of China (No. 2013AA014201).

  11. Giant Thermal Rectification from Polyethylene Nanofiber Thermal Diodes

    CERN Document Server

    Zhang, Teng

    2015-01-01

    The realization of phononic computing is held hostage by the lack of high performance thermal devices. Here we show through theoretical analysis and molecular dynamics simulations that unprecedented thermal rectification factors (as large as 1.20) can be achieved utilizing the phase dependent thermal conductivity of polyethylene nanofibers. More importantly, such high thermal rectifications only need very small temperature differences (< 20 oC) across the device, which is a significant advantage over other thermal diodes which need temperature biases on the order of the operating temperature. Taking this into consideration, we show that the dimensionless temperature-scaled rectification factors of the polymer nanofiber diodes range from 12 to 25 - much larger than other thermal diodes (< 8). The polymer nanofiber thermal diode consists of a crystalline portion whose thermal conductivity is highly phase-sensitive and a cross-linked portion which has a stable phase. Nanoscale size effect can be utilized t...

  12. Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Campola, Michael J.; Label, Kenneth A.

    2017-01-01

    In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

  13. Motion of current filaments in avalanching PIN diodes

    Science.gov (United States)

    Xingrong, Ren; Changchun, Chai; Zhenyang, Ma; Yintang, Yang; Liping, Qiao; Chunlei, Shi; Lihua, Ren

    2013-04-01

    The motion of current filaments in avalanching PIN diodes has been investigated in this paper by 2D transient numerical simulations. The simulation results show that the filament can move along the length of the PIN diode back and forth when the self-heating effect is considered. The voltage waveform varies periodically due to the motion of the filament. The filament motion is driven by the temperature gradient in the filament due to the negative temperature dependence of the impact ionization rates. Contrary to the traditional understanding that current filamentation is a potential cause of thermal destruction, it is shown in this paper that the thermally-driven motion of current filaments leads to the homogenization of temperature in the diode and is expected to have a positive influence on the failure threshold of the PIN diode.

  14. Qualification of diode foil materials for excimer lasers

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, R.G.; Shurter, R.P.; Rose, E.A.

    1989-01-01

    The Aurora facility at Los Alamos National Laboratory uses KrF excimer lasers to produce 248 nm light for inertial confinement fusion applications. Diodes in each amplifier produce relativistic electron beams to pump a Kr-F-Ar gas mixture. A foil is necessary to separate the vacuum diode from the laser gas. High tensile strength, high electron transmission, low ultraviolet reflectivity, and chemical compatibility with fluorine have been identified as requisite foil properties. Several different materials were acquired and tested for use as diode foils. Transmission and fluorine compatibility tests were performed using the Electron Gun Test Facility (EGTF) at Los Alamos. Off-line tests of tensile strength and reflectivity were performed. Titanium foil, which is commonly used as a diode foil, was found to generate solid and gaseous fluoride compounds, some of which are highly reactive in contact with water vapor. 6 refs., 6 figs., 1 tab.

  15. Qualification of diode foil materials for excimer lasers

    Science.gov (United States)

    Anderson, R. G.; Shurter, R. P.; Rose, E. A.

    The Aurora facility at Los Alamos National Laboratory uses KrF excimer lasers to produce 248 nm light for inertial confinement fusion applications. Diodes in each amplifier produce relativistic electron beams to pump a Kr-F-Ar gas mixture. A foil is necessary to separate the vacuum diode from the laser gas. High tensile strength, high electron transmission, low ultraviolet reflectivity, and chemical compatibility with fluorine have been identified as requisite foil properties. Several different materials were acquired and tested for use as diode foils. Transmission and fluorine compatibility tests were performed using the Electron Gun Test Facility (EGTF) at Los Alamos. Off-line tests of tensile strength and reflectivity were performed. Titanium foil, which is commonly used as a diode foil, was found to generate solid and gaseous fluoride compounds, some of which are highly reactive in contact with water vapor.

  16. Active graphene-silicon hybrid diode for terahertz waves

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  17. Unmanned Aerial Vehicle Diode Laser Sensor for Methane Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A compact, lightweight, and low power diode laser sensor will be developed for atmospheric methane detection on small unmanned aerial vehicles (UAVs). The physical...

  18. Plasma dynamo

    CERN Document Server

    Rincon, F; Schekochihin, A A; Valentini, F

    2015-01-01

    Magnetic fields pervade the entire Universe and, through their dynamical interactions with matter, affect the formation and evolution of astrophysical systems from cosmological to planetary scales. How primordial cosmological seed fields arose and were further amplified to $\\mu$Gauss levels reported in nearby galaxy clusters, near equipartition with kinetic energy of plasma motions and on scales of at least tens of kiloparsecs, is a major theoretical puzzle still largely unconstrained by observations. Extragalactic plasmas are weakly collisional (as opposed to collisional magnetohydrodynamic fluids), and whether magnetic-field growth and its sustainment through an efficient dynamo instability driven by chaotic motions is possible in such plasmas is not known. Fully kinetic numerical simulations of the Vlasov equation in a six-dimensional phase space necessary to answer this question have until recently remained beyond computational capabilities. Here, we show by means of such simulations that magnetic-field a...

  19. Efficient potassium diode pumped alkali laser operating in pulsed mode.

    Science.gov (United States)

    Zhdanov, Boris V; Rotondaro, Matthew D; Shaffer, Michael K; Knize, Randall J

    2014-07-14

    This paper presents the results of our experiments on the development of an efficient hydrocarbon free diode pumped alkali laser based on potassium vapor buffered by He gas at 600 Torr. A slope efficiency of more than 50% was demonstrated with a total optical conversion efficiency of 30%. This result was achieved by using a narrowband diode laser stack as the pump source. The stack was operated in pulsed mode to avoid limiting thermal effects and ionization.

  20. Stacked, filtered multi-channel X-ray diode array

    Science.gov (United States)

    MacNeil, L. P.; Dutra, E. C.; Compton, S. M.; Jacoby, B. A.; Raphaelian, M. L.

    2015-08-01

    There are many types of X-ray diodes that are used for X-ray flux or spectroscopic measurements and for estimating the spectral shape of the VUV to soft X-ray spectrum. However, a need arose for a low cost, robust X-ray diode to use for experiments in hostile environments on multiple platforms, and for experiments that utilize forces that may destroy the diode(s). Since the typical proposed use required a small size with a minimal single line-of-sight, a parallel array could not be used. So, a stacked, filtered multi-channel X-ray diode array was developed, called the MiniXRD. To achieve significant cost savings while maintaining robustness and ease of field setup, repair, and replacement, we designed the system to be modular. The filters were manufactured in-house and cover the range from 450 eV to 5000 eV. To achieve the line-of-sight accuracy needed, we developed mounts and laser alignment techniques. We modeled and tested elements of the diode design at NSTec Livermore Operations (NSTec / LO) to determine temporal response and dynamic range, leading to diode shape and circuitry changes to optimize impedance and charge storage. We fielded individual and stacked systems at several national facilities as ancillary `ride-along' diagnostics to test and improve the design usability. We present the MiniXRD system performance which supports consideration as a viable low-cost alternative for multiple-channel low-energy X-ray measurements. This diode array is currently at Technical Readiness Level (TRL) 6.

  1. Organic light emitting diode with surface modification layer

    Energy Technology Data Exchange (ETDEWEB)

    Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.

    2017-09-12

    An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).

  2. Active Stabilization of a Diode Laser Injection Lock

    OpenAIRE

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudde...

  3. Active graphene–silicon hybrid diode for terahertz waves

    OpenAIRE

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-01-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The di...

  4. Wavelength stabilized multi-kW diode laser systems

    Science.gov (United States)

    Köhler, Bernd; Unger, Andreas; Kindervater, Tobias; Drovs, Simon; Wolf, Paul; Hubrich, Ralf; Beczkowiak, Anna; Auch, Stefan; Müntz, Holger; Biesenbach, Jens

    2015-03-01

    We report on wavelength stabilized high-power diode laser systems with enhanced spectral brightness by means of Volume Holographic Gratings. High-power diode laser modules typically have a relatively broad spectral width of about 3 to 6 nm. In addition the center wavelength shifts by changing the temperature and the driving current, which is obstructive for pumping applications with small absorption bandwidths. Wavelength stabilization of high-power diode laser systems is an important method to increase the efficiency of diode pumped solid-state lasers. It also enables power scaling by dense wavelength multiplexing. To ensure a wide locking range and efficient wavelength stabilization the parameters of the Volume Holographic Grating and the parameters of the diode laser bar have to be adapted carefully. Important parameters are the reflectivity of the Volume Holographic Grating, the reflectivity of the diode laser bar as well as its angular and spectral emission characteristics. In this paper we present detailed data on wavelength stabilized diode laser systems with and without fiber coupling in the spectral range from 634 nm up to 1533 nm. The maximum output power of 2.7 kW was measured for a fiber coupled system (1000 μm, NA 0.22), which was stabilized at a wavelength of 969 nm with a spectral width of only 0.6 nm (90% value). Another example is a narrow line-width diode laser stack, which was stabilized at a wavelength of 1533 nm with a spectral bandwidth below 1 nm and an output power of 835 W.

  5. Stacked, filtered multi-channel X-ray diode array

    Energy Technology Data Exchange (ETDEWEB)

    MacNeil, Lawrence [National Security Technologies, LLC. (NSTec), Mercury, NV (United States); Dutra, Eric [National Security Technologies, LLC. (NSTec), Mercury, NV (United States); Raphaelian, Mark [National Security Technologies, LLC. (NSTec), Mercury, NV (United States); Compton, Steve [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Jacoby, Barry [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2015-08-01

    There are many types of X-ray diodes used for X-ray flux or spectroscopic measurements and for estimating the spectral shape of the VUV to soft X-ray spectrum. However, a need exists for a low-cost, robust X-ray diode to use for experiments in hostile environments on multiple platforms, and for experiments that utilize forces that may destroy the diode(s). Since the typical proposed use required a small size with a minimal single line-of-sight, a parallel array could not be used. So, a stacked, filtered multi-channel X-ray diode array was developed, called the MiniXRD. To achieve significant cost savings while maintaining robustness and ease of field setup, repair, and replacement, we designed the system to be modular. The filters were manufactured in-house and cover the range from 450 eV to 5000 eV. To achieve the line-of-sight accuracy needed, we developed mounts and laser alignment techniques. We modeled and tested elements of the diode design at NSTec Livermore Operations (NSTec / LO) to determine temporal response and dynamic range, leading to diode shape and circuitry changes to optimize impedance and charge storage. The authors fielded individual and stacked systems at several national facilities as ancillary "ride-along" diagnostics to test and improve the design usability. This paper presents the MiniXRD system performance, which supports consideration as a viable low-costalternative for multiple-channel low-energy X-ray measurements. This diode array is currently at Technical Readiness Level (TRL) 6.

  6. Organic light emitting diode with light extracting electrode

    Energy Technology Data Exchange (ETDEWEB)

    Bhandari, Abhinav; Buhay, Harry

    2017-04-18

    An organic light emitting diode (10) includes a substrate (20), a first electrode (12), an emissive active stack (14), and a second electrode (18). At least one of the first and second electrodes (12, 18) is a light extracting electrode (26) having a metallic layer (28). The metallic layer (28) includes light scattering features (29) on and/or in the metallic layer (28). The light extracting features (29) increase light extraction from the organic light emitting diode (10).

  7. Active Stabilization of a Diode Laser Injection Lock

    OpenAIRE

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudde...

  8. Avalanche robustness of SiC Schottky diode

    OpenAIRE

    Dchar, Ilyas; Buttay, Cyril; Morel, Hervé

    2016-01-01

    International audience; Reliability is one of the key issues for the application of Silicon carbide (SiC) diode in high power conversion systems. For instance, in high voltage direct current (HVDC) converters, the devices can be submitted to high voltage transients which yield to avalanche. This paper presents the experimental evaluation of SiC diodes submitted to avalanche, and shows that the energy dissipation in the device can increase quickly and will not be uniformly distributed across t...

  9. Spectral beam combining of diode lasers with high efficiency

    DEFF Research Database (Denmark)

    Müller, André; Vijayakumar, Deepak; Jensen, Ole Bjarlin;

    2012-01-01

    Based on spectral beam combining we obtain 16 W of output power, combining two 1063 nm DBR-tapered diode lasers. The spectral separation within the combined beam can be used for subsequent sum-frequency generation.......Based on spectral beam combining we obtain 16 W of output power, combining two 1063 nm DBR-tapered diode lasers. The spectral separation within the combined beam can be used for subsequent sum-frequency generation....

  10. Plasma medicine

    CERN Document Server

    Fridman, Alexander

    2012-01-01

    This comprehensive text is suitable for researchers and graduate students of a 'hot' new topic in medical physics. Written by the world's leading experts,  this book aims to present recent developments in plasma medicine, both technological and scientific, reviewed in a fashion accessible to the highly interdisciplinary audience consisting of doctors, physicists, biologists, chemists and other scientists, university students and professors, engineers and medical practitioners. The book focuses on major topics and covers the physics required to develop novel plasma discharges relevant for medic

  11. Design and Fabrication of Planar GaAs Gunn Diodes

    Science.gov (United States)

    Kim, Mi-Ra; Lee, Seong-Dae; Chae, Yeon-Sik; Rhee, Jin-Koo

    We studied planar graded-gap injector GaAs Gunn diodes designed for operation at 94GHz. Two types of planar Gunn diodes were designed and fabricated. In the first diode, a cathode was situated inside a circular anode with a diameter of 190μm. The distance between the anode and cathode varied from 60μm to 68μm depending on the cathode size. Also, we designed a structure with a constant distance between the anode and cathode of 10μm. In the second diode, the anode was situated inside the cathode for the flip-chip mounting on the oscillator circuits. The fabrication of the Gunn diode was based on ohmic contact metallization, mesa etching, and air-bridge and overlay metallization. DC measurements were carried out, and the nature of the negative differential resistance, the operating voltage, and the peak current in the graded-gap injector GaAs Gunn diodes are discussed for different device structures. It is shown that the structure with the shorter distance between the cathode and anode has a higher peak current, higher breakdown voltage, and lower threshold voltage than those of the structure with the larger distance between the cathode and anode.

  12. Coherent and noncoherent low-power diodes in clinical practice

    Science.gov (United States)

    Antipa, Ciprian; Pascu, Mihail-Lucian; Stanciulescu, Viorica; Vlaiculescu, Mihaela; Ionescu, Elena; Bordea, Daniel

    1997-05-01

    Clinical efficacy of the low power laser (LPL) in medical treatments is still not well established. In a double blind, placebo controlled study, we tried to find out first which type of LPL is more efficient, and second if coherence is an important character for clinical efficacy. We treated 1228 patients having different rheumatic diseases, with low power diode, used as follows: A group: IR coherent diode, continuous emission, 3 mW power; B group: IR coherent diode, pulsed emission, output power about 3 mW; C group: IR noncoherent diode continuous emission 9 mW power; D group: both IR diode lasers (continuous or pulsed) and HeNe laser, continuous emission, 2 mW power; E group: placebo laser as control group. The energy dose used for every group was the same, as well as the clinical protocols. The positive results were: 66.16% for A group; 64.06% for B group; 48.87% for C group; 76.66% for D group, and 39.07% for E group. Finally, we showed that LPL is really efficient in the treatment of some rheumatic diseases, especially when red and IR diode laser were used in combination. The type of emission (continuous or pulsed) is not important, but coherence is obviously necessary for clinical efficacy.

  13. Transition metal dichalcogenide heterojunction PN diode toward ultimate photovoltaic benefits

    Science.gov (United States)

    Ahn, Jongtae; Jeon, Pyo Jin; Raza, Syed Raza Ali; Pezeshki, Atiye; Min, Sung-Wook; Hwang, Do Kyung; Im, Seongil

    2016-12-01

    Recently, two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors as van der Waals (vdW) materials have attracted much attention from researchers. Among many 2D TMDC materials, a few layer-thin molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) have been most intensively studied respectively as 2D n- and p-type semiconductors. Here, we have fabricated vertical vdW heterojunction n-MoS2/p-WSe2 diode with a few tens nm-thick layers by using vertically-sandwiched ohmic terminals, so that no quasi neutral region may exist between two terminals. As a result, we obtained high photo responsivity at zero volt without any electric power, and it appears comparable to those of commercially-optimized Si PN diode. Photo-voltage output of 0.3 V was easily obtained from our vdW PN diode as open circuit voltage, and can be doubled up to 0.6 V by using two PN diodes. These beneficial photovoltaic results from vdW PN diode were directly applied to PV switching dynamics and transistor photo gating, for the first time. We regard that our vdW n-MoS2/p-WSe2 heterojunction diode could maximize its photovoltaic energy benefits with optimized TMDC thicknesses.

  14. Improved calibration technique of the infrared imaging bolometer using ultraviolet light-emitting diodes.

    Science.gov (United States)

    Drapiko, E; Peterson, B; Alekseev, A; Seo, D C

    2010-10-01

    The technique used until recently utilizing the Ne-He laser for imaging bolometer foils calibration [B. J. Peterson et al., J. Plasma Fusion Res. 2, S1018 (2007)] has showed several issues. The method was based on irradiation of 1 cm spaced set of points on a foil by the laser beam moved by set of mirrors. Issues were the nonuniformity of laser power due to the vacuum window transmission nonuniformity and high reflection coefficient for the laser. Also, due to the limited infrared (IR) window size, it was very time consuming. The new methodology uses a compact ultraviolet (uv) light-emitting diodes installed inside the vacuum chamber in a fixed position and the foil itself will be moved in the XY directions by two vacuum feedthroughs. These will help to avoid the above mentioned issues due to lack of a vacuum window, fixed emitters, higher uv power absorption, and a fixed IR camera position.

  15. Improved spectral characteristics of 980 nm broad area slotted Fabry-Perot diode lasers

    Institute of Scientific and Technical Information of China (English)

    Gao Zhuo; Wang Jun; Xiong Cong; Liu Yuanyuan; Liu Suping; Ma Xiaoyu

    2012-01-01

    A novel broad area slotted Fabry-Perot diode laser is designed and fabricated.Using a new semianalytical method,we introduce effective refractive index perturbations in the form of etched slot features into a conventional 980 nm broad area Fabry-Perot cavity,and the spectral characteristics of the device are expected to be noticeably improved.A low density of slot features is formed by using standard optical lithography and inductively coupled plasma dry etching.The experimental results show that the full spectral width at half-maximum is less than 0.4 nm,meanwhile,the thermal shift of the emission spectrum is decreased from 0.26 to 0.07 nm/℃ over a temperature range of 10 to 60 ℃.The improved spectral characteristics of the device are proved to be attributed to such slotted Fabry-Perot laser structures.

  16. Clinical comparison between the bleaching efficacy of light-emitting diode and diode laser with sodium perborate.

    Science.gov (United States)

    Koçak, Sibel; Koçak, Mustafa Murat; Sağlam, Baran Can

    2014-04-01

    The aim of this clinical study was to test the efficacy of a light-emitting diode (LED) light and a diode laser, when bleaching with sodium perborate. Thirty volunteers were selected to participate in the study. The patients were randomly divided into two groups. The initial colour of each tooth to be bleached was quantified with a spectrophotometer. In group A, sodium perborate and distilled water were mixed and placed into the pulp chamber, and the LED light was source applied. In group B, the same mixture was used, and the 810 nm diode laser was applied. The final colour of each tooth was quantified with the same spectrophotometer. Initial and final spectrophotometer values were recorded. Mann-Whitney U-test and Wicoxon tests were used to test differences between both groups. Both devices successfully whitened the teeth. No statistical difference was found between the efficacy of the LED light and the diode laser.

  17. Diagnostics of nonlocal plasmas: advanced techniques

    Science.gov (United States)

    Mustafaev, Alexander; Grabovskiy, Artiom; Strakhova, Anastasiya; Soukhomlinov, Vladimir

    2014-10-01

    This talk generalizes our recent results, obtained in different directions of plasma diagnostics. First-method of flat single-sided probe, based on expansion of the electron velocity distribution function (EVDF) in series of Legendre polynomials. It will be demonstrated, that flat probe, oriented under different angles with respect to the discharge axis, allow to determine full EVDF in nonlocal plasmas. It is also shown, that cylindrical probe is unable to determine full EVDF. We propose the solution of this problem by combined using the kinetic Boltzmann equation and experimental probe data. Second-magnetic diagnostics. This method is implemented in knudsen diode with surface ionization of atoms (KDSI) and based on measurements of the magnetic characteristics of the KDSI in presence of transverse magnetic field. Using magnetic diagnostics we can investigate the wide range of plasma processes: from scattering cross-sections of electrons to plasma-surface interactions. Third-noncontact diagnostics method for direct measurements of EVDF in remote plasma objects by combination of the flat single-sided probe technique and magnetic polarization Hanley method.

  18. Plasma physics and engineering

    CERN Document Server

    Fridman, Alexander

    2011-01-01

    Part I: Fundamentals of Plasma Physics and Plasma ChemistryPlasma in Nature, in the Laboratory, and in IndustryOccurrence of Plasma: Natural and Man MadeGas DischargesPlasma Applications, Plasmas in IndustryPlasma Applications for Environmental ControlPlasma Applications in Energy ConversionPlasma Application for Material ProcessingBreakthrough Plasma Applications in Modern TechnologyElementary Processes of Charged Species in PlasmaElementary Charged Particles in Plasma and Their Elastic and Inelastic CollisionsIonization ProcessesMechanisms of Electron Losses: The Electron-Ion RecombinationEl

  19. Investigation of Diode Pumped Alkali Laser Atmospheric Transmission Using Tunable Diode Laser Absorption Spectroscopy

    Science.gov (United States)

    2012-09-01

    House Appropriations hearing on May 20th, 2010 where Robert Gates, then U.S. Secretary of Defense, said the following in answer to a question from Rep...Henry, B. P. Wert, T. Gilpin , and J. R. Drummond. “Tunable diode laser absorption spectrometer for ground-based measurements of formaldehyde”. Journal...spectroscopy (TDLAS) at 1.37 µm”. Applied Physics B: Lasers and Optics, 92(3):393–401, 2008. 43. Kormann, Robert , Horst Fischer, and Frank G. Wienhold

  20. Profiling compact toroid plasma density on CTIX with laser deflection

    Science.gov (United States)

    Brockington, Samuel Joseph Erwin

    A laser deflectometer measures line-integrated plasma density gradient using laser diodes and amplified point detectors. A laser passing through an optically thin plasma is refracted by an amount proportional to the line-integrated electron density gradient. I have designed, installed, and operated a deflection diagnostic for the Compact Toroid Injection Experiment (CTIX), a plasma rail gun which can create compact toroid (CT) plasmas of controllable density and velocity. The diagnostic design and motivation are discussed, as well as three experiments performed with deflectometry. Thus, my thesis consists of the design of the deflectometer diagnostic, a comparison of its accuracy to interferometer density measurements, and finally a survey of compact toroid density profiles in two dimensions conducted with an array of detectors.

  1. Design of drive circuit of laser diode

    Science.gov (United States)

    Ran, Yingying; Huang, Xuegong; Xu, Xiaobin

    2016-10-01

    Aiming at the difficult problem of high precision frequency stabilization of semiconductor laser diode, the laser frequency control is realized through the design of the semiconductor drive system. Above all, the relationship between the emission frequency and the temperature of LD is derived theoretically. Then the temperature corresponding to the stable frequency is obtained. According to the desired temperature stability of LD, temperature control system is designed, which is composed of a temperature setting circuit, temperature gathering circuit, the temperature display circuit, analog PID control circuit and a semiconductor refrigerator control circuit module. By sampling technology, voltage of platinum resistance is acquired, and the converted temperature is display on liquid crystal display. PID analog control circuit controls speed stability and precision of temperature control. The constant current source circuit is designed to provide the reference voltage by a voltage stabilizing chip, which is buffered by an operational amplifier. It is connected with the MOSFET to drive the semiconductor laser to provide stable current for the semiconductor laser. PCB circuit board was finished and the experimental was justified. The experimental results show that: the design of the temperature control system could achieve the goal of temperature monitoring. Meanwhile, temperature can be stabilized at 40°C +/- 0.1°C. The output voltage of the constant current source is 2 V. The current is 35 mA.

  2. MMIC Replacement for Gunn Diode Oscillators

    Science.gov (United States)

    Crowe, Thomas W.; Porterfield, David

    2011-01-01

    An all-solid-state replacement for high-frequency Gunn diode oscillators (GDOs) has been proposed for use in NASA s millimeter- and submillimeter-wave sensing instruments. Highly developed microwave oscillators are used to achieve a low-noise and highly stable reference signal in the 10-40-GHz band. Compact amplifiers and high-power frequency multipliers extend the signal to the 100-500-GHz band with minimal added phase noise and output power sufficient for NASA missions. This technology can achieve improved output power and frequency agility, while maintaining phase noise and stability comparable to other GDOs. Additional developments of the technology include: a frequency quadrupler to 145 GHz with 18 percent efficiency and 15 percent fixed tuned bandwidth; frequency doublers featuring 124, 240, and 480 GHz; an integrated 874-GHz subharmonic mixer with a mixer noise temperature of 3,000 K DSB (double sideband) and mixer conversion loss of 11.8 dB DSB; a high-efficiency frequency tripler design with peak output power of 23 mW and 14 mW, and efficiency of 16 and 13 percent, respectively; millimeter-wave integrated circuit (MMIC) power amplifiers to the 30-40 GHz band with high DC power efficiency; and an 874-GHz radiometer suitable for airborne observation with state-of-the-art sensitivity at room temperature and less than 5 W of total power consumption.

  3. Diode laser absorption spectroscopy of lithium isotopes

    Science.gov (United States)

    Olivares, Ignacio E.; González, Iván A.

    2016-10-01

    We study Doppler-limited laser intensity absorption, in a thermal lithium vapor containing 7Li and 6Li atoms in a 9 to 1 ratio, using a narrow-linewidth single-longitudinal-mode tunable external cavity diode laser at the wavelength of 670.8 nm. The lithium vapor was embedded in helium or argon buffer gas. The spectral lineshapes were rigorously predicted for D_1 and D_2 for the lithium 6 and 7 isotope lines using reduced optical Bloch equations, specifically derived, from a density matrix analysis. Here, a detailed comparison is provided of the predicted lineshapes with the measured 7Li-D_2, 7Li-D_1, 6Li-D_2 and 6Li-D_1 lines, in the case of high vapor density and with intensity above the saturation intensity. To our knowledge, this is the first time that such detailed comparison is reported in the open literature. The calculations were also extended to saturated absorption spectra and compared to measured Doppler-free 7Li-D_2 and 6Li-D_2 hyperfine lines.

  4. Development of realtime monitoring technology for laser photoreaction product - Study on spectroscopy of rare earth elements by using diode laser and hollow cathode glow discharge

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sang Chun [Kyungnam University, Masan (Korea); Lee, Gea Ho [Chungnam National University, Taejon (Korea); Lee, Yong Il [Changwon National University, Changwon (Korea); Kim, Hyo Jin [Dongduk Women' s University, Seoul (Korea); Huh, Yong Dck [Dankook University, Seoul (Korea)

    1998-05-01

    Currently, fast and precise analysis of rare earth and actinide elements are much concerned and required for the safe treatments and storage of nuclear wastes generated by nuclear power plants. However, current technology is still far from the requirements for accurate realtime monitoring and measurement of radioactive elements. This project is of development of new technology of realtime monitoring and analysis of rare earth elements by using glow discharge and diode laser spectroscopy, and the study of spectroscopic characteristics of rare earth elements in glow discharge plasma. And, saturated absorption spectroscopy of rare earth elements was investigated with diode lasers. A see-through hollow cathode glow discharge (st-HCGD) cell was developed for the purpose of a portable atomizer and and its characteristics were investigated. High resolution spectroscopy was achieved with diode laser assisted saturated absorption spectroscopy. it is considered for major improvement of radioactive isotope detection technology. We expect a portable high resolution spectrometry with a see-through HCGD atomizer and diode lasers in near future. (Author). 63 refs., 39 figs., 7 tabs.

  5. Applications of microlens-conditioned laser diode arrays

    Energy Technology Data Exchange (ETDEWEB)

    Beach, R.J.; Emanuel, M.A.; Freitas, B.L. [and others

    1995-01-01

    The ability to condition the radiance of laser diodes using shaped-fiber cylindrical-microlens technology has dramatically increased the number of applications that can be practically engaged by diode laser arrays. Lawrence Livermore National Laboratory (LLNL) has actively pursued optical efficiency and engineering improvements in this technology in an effort to supply large radiance-conditioned laser diode array sources for its own internal programs. This effort has centered on the development of a modular integrated laser diode packaging technology with the goal of enabling the simple and flexible construction of high average power, high density, two-dimensional arrays with integrated cylindrical microlenses. Within LLNL, the principal applications of microlens-conditioned laser diode arrays are as high intensity pump sources for diode pumped solid state lasers (DPSSLs). A simple end-pumping architecture has been developed and demonstrated that allows the radiation from microlens-conditioned, two-dimensional diode array apertures to be efficiently delivered to the end of rod lasers. To date, pump powers as high as 2.5 kW have been delivered to 3 mm diameter laser rods. Such high power levels are critical for pumping solid state lasers in which the terminal laser level is a Stark level lying in the ground state manifold. Previously, such systems have often required operation of the solid state gain medium at low temperature to freeze out the terminal laser Stark level population. The authors recently developed high intensity pump sources overcome this difficulty by effectively pumping to much higher inversion levels, allowing efficient operation at or near room temperature. Because the end-pumping technology is scalable in absolute power, the number of rare-earth ions and transitions that can be effectively accessed for use in practical DPSSL systems has grown tremendously.

  6. Ablation of dentin by irradiation of violet diode laser

    Science.gov (United States)

    Hatayama, H.; Kato, J.; Akashi, G.; Hirai, Y.; Inoue, A.

    2006-02-01

    Several lasers have been used for clinical treatment in dentistry. Among them, diode lasers are attractive because of their compactness compared with other laser sources. Near-infrared diode lasers have been practically used for cutting soft tissues. Because they penetrate deep to soft tissues, they cause sufficiently thick coagulation layer. However, they aren't suitable for removal of carious dentin because absorption by components in dentin is low. Recently, a violet diode laser with a wavelength of 405nm has been developed. It will be effective for cavity preparation because dentin contains about 20% of collagen whose absorption coefficient at a violet wavelength is larger than that at a near-infrared wavelength. In this paper, we examined cutting performance of the violet diode laser for dentin. To our knowledge, there have been no previous reports on application of a violet laser to dentin ablation. Bovine teeth were irradiated by continuous wave violet diode laser with output powers in a range from 0.4W to 2.4W. The beam diameter on the sample was about 270μm and an irradiation time was one second. We obtained the crater ablated at more than an output power of 0.8W. The depth of crater ranged from 20μm at 0.8W to 90μm at 2.4W. Furthermore, the beam spot with an output power of 1.7W was scanned at a speed of 1mm/second corresponding to movement of a dentist's hand in clinical treatment. Grooves with the depth of more than 50μm were also obtained. From these findings, the violet diode laser has good potential for cavity preparation. Therefore, the violet diode laser may become an effective tool for cavity preparation.

  7. High brightness diode lasers controlled by volume Bragg gratings

    Science.gov (United States)

    Glebov, Leonid

    2017-02-01

    Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

  8. Magnetoresistive waves in plasmas

    Science.gov (United States)

    Felber, F. S.; Hunter, R. O., Jr.; Pereira, N. R.; Tajima, T.

    1982-10-01

    The self-generated magnetic field of a current diffusing into a plasma between conductors can magnetically insulate the plasma. Propagation of magnetoresistive waves in plasmas is analyzed. Applications to plasma opening switches are discussed.

  9. Electrosurgical plasmas

    Science.gov (United States)

    Stalder, Kenneth R.; McMillen, Donald F.; Woloszko, Jean

    2005-06-01

    Electrosurgical medical devices based on repetitively pulsed nonequilibrium micron-scale to millimetre-scale plasma discharges in saline solutions are described. The formation of vapour layers (bubbles) around active electrodes appears to be a common feature at moderate (<300 V rms) voltages, and dissociation, excitation and ionization of the vapour in these bubbles produces chemical conditions that are thought to be the source of beneficial tissue removal and treatment. Experimental data are discussed, as are the results of modelling efforts of the plasma chemistry. Hydroxyl radicals, hydrogen atoms and other species are observed spectroscopically and their interactions with collagen, a common component of tissue encountered in surgical situations, are considered. Several pathways by which hydroxyl radicals interacting with collagen can lead to tissue removal are discussed.

  10. Electrosurgical plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Stalder, Kenneth R; McMillen, Donald F; Woloszko, Jean [ArthroCare Corp., Sunnyvale, CA 94085-3523 (United States)

    2005-06-07

    Electrosurgical medical devices based on repetitively pulsed nonequilibrium micron-scale to millimetre-scale plasma discharges in saline solutions are described. The formation of vapour layers (bubbles) around active electrodes appears to be a common feature at moderate (<300 V rms) voltages, and dissociation, excitation and ionization of the vapour in these bubbles produces chemical conditions that are thought to be the source of beneficial tissue removal and treatment. Experimental data are discussed, as are the results of modelling efforts of the plasma chemistry. Hydroxyl radicals, hydrogen atoms and other species are observed spectroscopically and their interactions with collagen, a common component of tissue encountered in surgical situations, are considered. Several pathways by which hydroxyl radicals interacting with collagen can lead to tissue removal are discussed.

  11. High-efficiency fast scintillators for "optical" soft x-ray arrays for laboratory plasma diagnostics.

    Science.gov (United States)

    Delgado-Aparicio, L F; Stutman, D; Tritz, K; Vero, R; Finkenthal, M; Suliman, G; Kaita, R; Majeski, R; Stratton, B; Roquemore, L; Tarrio, C

    2007-08-20

    Scintillator-based "optical" soft x-ray (OSXR) arrays have been investigated as a replacement for the conventional silicon (Si)-based diode arrays used for imaging, tomographic reconstruction, magnetohydrodynamics, transport, and turbulence studies in magnetically confined fusion plasma research. An experimental survey among several scintillator candidates was performed, measuring the relative and absolute conversion efficiencies of soft x rays to visible light. Further investigations took into account glass and fiber-optic face-plates (FOPs) as substrates, and a thin aluminum foil (150 nm) to reflect the visible light emitted by the scintillator back to the optical detector. Columnar (crystal growth) thallium-doped cesium iodide (CsI:Tl) deposited on an FOP, was found to be the best candidate for the previously mentioned plasma diagnostics. Its luminescence decay time of the order of approximately 1-10 micros is thus suitable for the 10 micros time resolution required for the development of scintillator-based SXR plasma diagnostics. A prototype eight channel OSXR array using CsI:Tl was designed, built, and compared to an absolute extreme ultraviolet diode counterpart: its operation on the National Spherical Torus Experiment showed a lower level of induced noise relative to the Si-based diode arrays, especially during neutral beam injection heated plasma discharges. The OSXR concept can also be implemented in less harsh environments for basic spectroscopic laboratory plasma diagnostics.

  12. Plasma physics

    CERN Document Server

    Cairns, R A

    1985-01-01

    This book is intended as an introduction to plasma physics at a level suitable for advanced undergraduates or beginning postgraduate students in physics, applied mathematics or astrophysics. The main prerequisite is a knowledge of electromagnetism and of the associated mathematics of vector calculus. SI units are used throughout. There is still a tendency amongst some plasma physics researchers to· cling to C.g.S. units, but it is the author's view that universal adoption of SI units, which have been the internationally agreed standard since 1960, is to be encouraged. After a short introductory chapter, the basic properties of a plasma con­ cerning particle orbits, fluid theory, Coulomb collisions and waves are set out in Chapters 2-5, with illustrations drawn from problems in nuclear fusion research and space physics. The emphasis is on the essential physics involved and (he theoretical and mathematical approach has been kept as simple and intuitive as possible. An attempt has been made to draw attention t...

  13. Plasma pharmacy - physical plasma in pharmaceutical applications.

    Science.gov (United States)

    von Woedtke, Th; Haertel, B; Weltmann, K-D; Lindequist, U

    2013-07-01

    During the last years the use of physical plasma for medical applications has grown rapidly. A multitude of findings about plasma-cell and plasma-tissue interactions and its possible use in therapy have been provided. One of the key findings of plasma medical basic research is that several biological effects do not result from direct plasma-cell or plasma-tissue interaction but are mediated by liquids. Above all, it was demonstrated that simple liquids like water or physiological saline, are antimicrobially active after treatment by atmospheric pressure plasma and that these effects are attributable to the generation of different low-molecular reactive species. Besides, it could be shown that plasma treatment leads to the stimulation of specific aspects of cell metabolism and to a transient and reversible increase of diffusion properties of biological barriers. All these results gave rise to think about another new and innovative field of medical plasma application. In contrast to plasma medicine, which means the direct use of plasmas on or in the living organism for direct therapeutic purposes, this field - as a specific field of medical plasma application - is called plasma pharmacy. Based on the present state of knowledge, most promising application fields of plasma pharmacy might be: plasma-based generation of biologically active liquids; plasma-based preparation, optimization, or stabilization of - mainly liquid - pharmaceutical preparations; support of drug transport across biological barriers; plasma-based stimulation of biotechnological processes.

  14. Measurements of the Backstreaming Proton IONS in the Self-Magnetic Pinch (SMP) Diode Utilizing Copper Activation Technique

    Science.gov (United States)

    Mazarakis, Michael; Cuneo, Michael; Fournier, Sean; Johnston, Mark; Kiefer, Mark; Leckbee, Joshua; Simpson, Sean; Renk, Timothy; Webb, Timothy; Bennett, Nichelle

    2016-10-01

    The results presented here were obtained with an SMP diode mounted at the front high voltage end of the 8-10-MV RITS Self-Magnetically Insulated Transmission Line (MITL) voltage adder. Our experiments had two objectives: first, to measure the contribution of the back-streaming proton currents emitted from the anode target, and second, to evaluate the energy of those ions and hence the actual Anode-Cathode (A-K) gap voltage. The accelerating voltage quoted in the literature is estimated utilizing para-potential flow theories. Thus, it is interesting to have another independent measurement of the A-K voltage. We have measured the back-streaming protons emitted from the anode and propagating through a hollow cathode tip for various diode configurations and different techniques of target cleaning treatment, namely, heating at very high temperatures with DC and pulsed current, with RF plasma cleaning, and with both plasma cleaning and heating. We have also evaluated the A-K gap voltage by energy filtering techniques. Sandia is operated by Sandia Corporation, a subsidiary of Lockheed Martin Company, for the US DOE NNSA under Contract No. DE-AC04-94AL85000.

  15. Disruptive laser diode source for embedded LIDAR sensors

    Science.gov (United States)

    Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

    2017-02-01

    Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources

  16. Obtaining the high-current low-energy electron beams in the systems with a plasma emitter

    CERN Document Server

    Devyatkov, V N; Shchanin, P M

    2001-01-01

    Using gas filled diodes with arc and glow-discharge base plasma emitters one investigated into generation and transfer of high-current electron beams. Using a diode with arc discharge base plasma emitter at 15 kV accelerating voltage one obtained a space charge compensated with up to 1 kA current compressed by proper magnetic field from 8 cm diameter up to 1 cm and transported at over 20 cm distance with 70% efficiency. Using a diode with a glow-discharge one obtained a 80 A current and up to 100 A/cm current density beam. In a weak axial magnetic field with B=0.015 T induction such a beam is transported at 30 cm distance

  17. In vivo dosimetry with silicon diodes in total body irradiation

    Science.gov (United States)

    Oliveira, F. F.; Amaral, L. L.; Costa, A. M.; Netto, T. G.

    2014-02-01

    The aim of this work is the characterization and application of silicon diode detectors for in vivo dosimetry in total body irradiation (TBI) treatments. It was evaluated the diode response with temperature, dose rate, gantry angulations and field size. A maximum response variation of 2.2% was obtained for temperature dependence. The response variation for dose rate and angular was within 1.2%. For field size dependence, the detector response increased with field until reach a saturation region, where no more primary radiation beam contributes for dose. The calibration was performed in a TBI setup. Different lateral thicknesses from one patient were simulated and then the calibration factors were determined by means of maximum depth dose readings. Subsequent to calibration, in vivo dosimetry measurements were performed. The response difference between diode readings and the prescribed dose for all treatments was below 4%. This difference is in agreement as recommended by the International Commission on Radiation Units and Measurements (ICRU), which is ±5%. The present work to test the applicability of a silicon diode dosimetry system for performing in vivo dose measurements in TBI techniques presented good results. These measurements demonstrated the value of diode dosimetry as a treatment verification method and its applicability as a part of a quality assurance program in TBI treatments.

  18. Diode laser power module for beamed power transmission

    Science.gov (United States)

    Choi, S. H.; Williams, M. D.; Lee, J. H.; Conway, E. J.

    1991-01-01

    Recent progress with powerful, efficient, and coherent monolithic diode master-oscillator/power-amplifier (M-MOPA) systems is promising for the development of a space-based diode laser power station. A conceptual design of a 50-kW diode laser power module was made for space-based power stations capable of beaming coherent power to the moon, Martian rovers, or other satellites. The laser diode power module consists of a solar photovoltaic array or nuclear power source, diode laser arrays (LDAs), a phase controller, beam-steering optics, a thermal management unit, and a radiator. Thermal load management and other relevant aspects of the system (such as power requirements and system mass) are considered. The 50-kW power module described includes the highest available efficiency of LD M-MOPA system to date. However, the overall efficiency of three amplifier stages, including the coupling efficiency, turns out to be 55.5 percent. Though a chain of PA stages generates a high-power coherent beam, there is a penalty due to the coupling loss between stages. The specific power of the 50-kW module using solar power is 6.58 W/kg.

  19. Reliability of high power laser diodes with external optical feedback

    Science.gov (United States)

    Bonsendorf, Dennis; Schneider, Stephan; Meinschien, Jens; Tomm, Jens W.

    2016-03-01

    Direct diode laser systems gain importance in the fields of material processing and solid-state laser pumping. With increased output power, also the influence of strong optical feedback has to be considered. Uncontrolled optical feedback is known for its spectral and power fluctuation effects, as well as potential emitter damage. We found that even intended feedback by use of volume Bragg gratings (VBG) for spectral stabilization may result in emitter lifetime reduction. To provide stable and reliable laser systems design, guidelines and maximum feedback ratings have to be found. We present a model to estimate the optical feedback power coupled back into the laser diode waveguide. It includes several origins of optical feedback and wide range of optical elements. The failure thresholds of InGaAs and AlGaAs bars have been determined not only at standard operation mode but at various working points. The influence of several feedback levels to laser diode lifetime is investigated up to 4000h. The analysis of the semiconductor itself leads to a better understanding of the degradation process by defect spread. Facet microscopy, LBIC- and electroluminescence measurements deliver detailed information about semiconductor defects before and after aging tests. Laser diode protection systems can monitor optical feedback. With this improved understanding, the emergency shutdown threshold can be set low enough to ensure laser diode reliability but also high enough to provide better machine usability avoiding false alarms.

  20. Method and system for homogenizing diode laser pump arrays

    Energy Technology Data Exchange (ETDEWEB)

    Bayramian, Andrew James

    2016-05-03

    An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

  1. Violet Laser Diode Enables Lighting Communication.

    Science.gov (United States)

    Chi, Yu-Chieh; Huang, Yu-Fang; Wu, Tsai-Chen; Tsai, Cheng-Ting; Chen, Li-Yin; Kuo, Hao-Chung; Lin, Gong-Ru

    2017-09-05

    Violet laser diode (VLD) based white-light source with high color rendering index (CRI) for lighting communication is implemented by covering with Y3Al5O12:Ce(3+) (YAG:Ce) or Lu3Al5O12:Ce(3+)/CaAlSiN3:Eu(2+) (LuAG:Ce/CASN:Eu) phosphorous diffuser plates. After passing the beam of VLD biased at 70 mA (~2I th ) through the YAG:Ce phosphorous diffuser, a daylight with a correlated color temperature (CCT) of 5068 K and a CRI of 65 is acquired to provide a forward error correction (FEC) certified data rate of 4.4 Gbit/s. By using the VLD biased at 122 mA (~3.5I th ) to excite the LuAG:Ce/CASN:Eu phosphorous diffuser with 0.85-mm thickness, a warm white-light source with a CCT of 2700 K and a CRI of 87.9 is obtained at a cost of decreasing transmission capacity to 2.4 Gbit/s. Thinning the phosphor thickness to 0.75 mm effectively reduces the required bias current by 32 mA to achieve the same CCT for the delivered white light, which offers an enlarged CRI of 89.1 and an increased data rate of 4.4 Gbit/s. Further enlarging the bias current to 105 mA remains the white-light transmission capacity at 4.4 Gbit/s but reveals an increased CCT of 3023 K and an upgraded CRI of 91.5.

  2. Characteristics of Cylindrical Microwave Plasma Source at Low Pressure

    Science.gov (United States)

    Park, Seungil; Youn, S.; Kim, S. B.; Yoo, S. J.

    2016-10-01

    A microwave plasma source with a cylindrical resonance cavity has been proposed to generate the plasma at low pressure. This plasma source consists of magnetron, waveguide, antenna, and cavity. The microwave generating device is a commercial magnetron with 1 kW output power at the frequency of 2.45 GHz. The microwave is transmitted through the rectangular waveguide with the whistle shape, and coupled to the cavity by the slot antenna. The resonant mode of the cylindrical cavity is the TE111 mode. The operating pressure is between 0.1 Torr and 0.3 Torr with the Argon and nitrogen gas. The electron temperature and electron number density of argon plasma were measured with the optical emission spectroscopy measurement. And Ar1s5 metastable density was measured using tunable diode laser absorption spectroscopy (TDLAS). The plasma diagnostic results of a cylindrical microwave plasma source would be described in this study. This work was supported by R&D Program of ``Plasma Advanced Technology for Agriculture and Food (Plasma Farming)'' through the National Fusion Research Institute of Korea (NFRI) funded by the Government funds.

  3. Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes

    NARCIS (Netherlands)

    Bijlsma, S.J.; Bijlsma, Sipke J.; van Kranenburg, H.; Nieuwesteeg, K.J.B.M.; Pitt, Michael G.; Verweij, Jan F.; Verweij, J.F.

    1996-01-01

    Electrical breakdown, both intrinsic and extrinsic, of thin film diodes used as switches in active matrix addressed liquid crystal displays has been studied using electrical measurements, thermal measurements, thermal 3D simulations, electrical simulations and post breakdown observations. The diodes

  4. Fazostabilny RF attenuator on the р—і—n diods

    Directory of Open Access Journals (Sweden)

    A. S. Makarenko

    1987-12-01

    Full Text Available Considered agreed attenuator р—і—n diods low uneven phase response when you change the insertion loss is achieved by separate compensation of reactive elements diodes. Calculated characteristics.

  5. Practical applications of the diode in dental practice

    Science.gov (United States)

    Moldoveanu, Lucia E.; Odor, Alin A.

    2016-03-01

    Introduction: The use of lasers has become a practice in modern periodontology and it is a fact that the use of diodes in the dental office can bring a real benefit in periodontal surgery. Material and method: These case reports describe few of various soft tissue procedures that were performed with diode laser 940 nm (Epic 10, Biolase Inc., USA). Discussions: There are a few immediate benefits of the intervention: the "periodontal bandage" belongs to the patient, the procedure is painless, performed under a superficial anesthesia and the psychological impact on the patient, as well as the acceptance, are superior to conventional methods of dentistry. Conclusions: Diode lasers at the level of periodontium have become a significant part of the dentistry, reducing the patient's stress and giving satisfaction to practitioners as well.

  6. Experimental study of the diode pumped alkali laser (DPAL)

    Science.gov (United States)

    Endo, Masamori; Nagaoka, Ryuji; Nagaoka, Hiroki; Nagai, Toru; Wani, Fumio

    2014-02-01

    A small-scale cesium diode-pumped alkali laser (DPAL) apparatus has been developed for fundamental researches. A commercial laser diode with volume Bragg grating outcoupler is used to pump the gain cell longitudinally. Both windows of the gain cell are set at Brewster's angle for minimum loss and maximum durability. Output coupling coefficient is continuously variable from 13% to 85% by the slanted quartz plate outcoupler inserted in the optical resonator. Small signal gain is measured with a laser diode probe at various gain cell temperatures. A 6.5 W continuouswave output with 56% optical-to-optical conversion efficiency (based on the absorbed power) has been achieved. A numerical simulation code is developed and its calculation results are in good agreement with the experiments.

  7. Space-charge limiting current in spherical cathode diodes

    Institute of Scientific and Technical Information of China (English)

    刘国治; 邵浩

    2003-01-01

    The results of the investigation on the space-charge limiting current for a spherical-cathode diode in the nonrelativistic situation are presented in this paper. The results show that the current enhancement factor equals the square of E-field enhancement factor on the cathode surface. The generated space-charge limiting current is deduced.In the case of a pin-shaped-cathode diode, the space-charge limiting current is also obtained, indicating that the current is independent of the geometric parameters of the diode. Analyses of the shielding effects and the conditions for generation of the uniform space-charge limiting beam show that, for pin-arrayed cathodes, the distance between pins should be in the range from 1.2D to 1.5D, where D is the distance between the two electrodes.

  8. Gate Modulation of Graphene-ZnO Nanowire Schottky Diode.

    Science.gov (United States)

    Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

    2015-05-06

    Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping Vg towards the negative value, while decreases slowly towards the positive Vg. Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.

  9. Enhancement in performance of polycarbazole-graphene nanocomposite Schottky diode

    Directory of Open Access Journals (Sweden)

    Rajiv K. Pandey

    2013-12-01

    Full Text Available We report formation of polycarbazole (PCz–graphene nanocomposite over indium tin oxide (ITO coated glass substrate using electrochemical technique for fabrication of high performance Schottky diodes. The synthesized nanocomposite is characterized before fabrication of devices for confirmation of uniform distribution of graphene nanosheets in the polymer matrix. Pure PCz and PCz-graphene nanocomposites based Schottky diodes are fabricated of configuration Al/PCz/ITO and Al/PCz-graphene nanocomposite/ITO, respectively. The current density–voltage (J-V characteristics and diode performance parameters (such as the ideality factor, barrier height, and reverse saturation current density are compared under ambient condition. Al/PCz-graphene nanocomposite/ITO device exhibits better ideality factor in comparison to the device formed using pure PCz. It is also observed that the Al/PCz-graphene nanocomposite/ITO device shows large forward current density and low turn on voltage in comparison to Al/PCz/ITO device.

  10. 1-D array of perforated diode neutron detectors

    Energy Technology Data Exchange (ETDEWEB)

    McNeil, Walter J. [Kansas State University, Mechanical and Nuclear Engineering Department, Manhattan, KS 66506 (United States)], E-mail: wjm4444@ksu.edu; Bellinger, Steven L.; Unruh, Troy C.; Henderson, Chris M.; Ugorowski, Phil; Morris-Lee, Bryce [Kansas State University, Mechanical and Nuclear Engineering Department, Manhattan, KS 66506 (United States); Taylor, Russell D. [Electronics Design Laboratory, Kansas State University, Manhattan, KS 66506 (United States); McGregor, Douglas S. [Kansas State University, Mechanical and Nuclear Engineering Department, Manhattan, KS 66506 (United States)], E-mail: mcgregor@ksu.edu

    2009-06-01

    Performance of a 4 cm long 64-pixel perforated diode neutron detector array is compared with an identical array of thin-film coated diodes. The perforated neutron detector design has been adapted to a 1-D pixel array capable of 120 {mu}m spatial resolution and counting efficiency greater than 12%. Deep vertical trenches filled with {sup 6}LiF provide outstanding improvement in efficiency over thin-film coated diode designs limited to only 4.5%. This work marks the final step towards the construction of a much larger array consisting of 1024 pixels spanning 10 cm. The larger detector array will be constructed with a sub-array of 64-pixel sensors, and will be used for small-angle neutron scattering experiments at the Spallation Neutron Source of Oak Ridge National Laboratory.

  11. A Direct Diode Laser System Using a Planar Lightwave Circuit

    Science.gov (United States)

    Hasegawa, Kazuo; Matsubara, Hiroyuki; Ichikawa, Tadashi; Maeda, Mitsutoshi; Ito, Hiroshi

    2008-08-01

    In this paper we propose a direct diode laser (DDL) system consisting of laser diode (LD) bars, a planar lightwave circuit (PLC), and an optical fiber. We have developed a PLC as an optical power combiner and an LD mounting technology that is suitable for coupling to the PLC. A DDL system is presented that consists of six LD-PLC optical modules for the laser-welding of highly heat-resistant plastics. The total output power is in the 200 W class, with a spot diameter of 5.52 mm for the major axis and 5.00 mm for the minor axis at a focal length of 50 mm. The total output efficiency is 60.9% from the laser diode to the welding torch.

  12. Dose rate and SDD dependence of commercially available diode detectors.

    Science.gov (United States)

    Saini, Amarjit S; Zhu, Timothy C

    2004-04-01

    The dose-rate dependence of commercially available diode detectors was measured under both high instantaneous dose-rate (pulsed) and low dose rate (continuous, Co-60) radiation. The dose-rate dependence was measured in an acrylic miniphantom at a 5-cm depth in a 10 x 10 cm2 collimator setting, by varying source-to-detector distance (SDD) between at least 80 and 200 cm. The ratio of a normalized diode reading to a normalized ion chamber reading (both at SDD=100 cm) was used to determine diode sensitivity ratio for pulsed and continuous radiation at different SDD. The inverse of the diode sensitivity ratio is defined as the SDD correction factor (SDD CF). The diode sensitivity ratio increased with increasing instantaneous dose rate (or decreasing SDD). The ratio of diode sensitivity, normalized to 4000 cGy/s, varied between 0.988 (1490 cGy/s)-1.023 (38,900 cGy/s) for unirradiated n-type Isorad Gold, 0.981 (1460 cGy/s)-1.026 (39,060 cGy/s) for unirradiated QED Red (n type), 0.972 (1490 cGy/s)-1.068 (38,900 cGy/s) for preirradiated Isorad Red (n type), 0.985 (1490 cGy/s)-1.012 (38,990 cGy/s) for n-type Pt-doped Isorad-3 Gold, 0.995 (1450 cGy/s)-1.020 (21,870 cGy/s) for n-type Veridose Green, 0.978 (1450 cGy/s)-1.066 (21,870 cGy/s) for preirradiated Isorad-p Red, 0.994 (1540 cGy/s)-1.028 (17,870 cGy/s) for p-type preirradiated QED, 0.998 (1450 cGy/s)-1.003 (21,870 cGy/s) for the p-type preirradiated Scanditronix EDP20(3G), and 0.998 (1490 cGy/s)-1.015 (38,880 cGy/s) for Scanditronix EDP10(3G) diodes. The p-type diodes do not always show less dose-rate dependence than the n-type diodes. Preirradiation does not always reduce diode dose-rate dependence. A comparison between the SDD dependence measured at the surface of a full scatter phantom and that in a miniphantom was made. Using a direct adjustment of radiation pulse height, we concluded that the SDD dependence of diode sensitivity can be explained by the instantaneous dose-rate dependence if sufficient buildup is

  13. Monolithic watt-level millimeter-wave diode-grid frequency tripler array

    Science.gov (United States)

    Hwu, R. J.; Luhmann, N. C., Jr.; Rutledge, D. B.; Hancock, B.; Lieneweg, U.

    1988-01-01

    In order to provide watt-level CW output power throughout the millimeter and submillimeter wave region, thousands of solid-state diodes have been monolithically integrated using a metal grid to produce a highly efficient frequency multiplier. Devices considered include GaAs Schottky diodes, thin MOS diodes, and GaAs Barrier-Intrinsic-N(+)diodes. The performance of the present compact low-cost device has been theoretically and experimentally validated.

  14. Stimulated Brillouin Scattering Suppression in Fiber Amplifiers via Chirped Diode Lasers

    Science.gov (United States)

    2011-09-01

    1.55-µm diode laser at 1014 Hz/s using a phase-locked loop and a fiber -optic Michelson interferometer (9). The chirp has now been extended to 5×1015...diode lasers. By incorporating a fiber interferometer , the technique has been extended to chirp a (single) laser diode at 1015 Hz/s in an extremely...Stimulated Brillouin Scattering Suppression in Fiber Amplifiers via Chirped Diode Lasers by Jeffrey O. White, George Rakuljic, and Carl E

  15. Hyper NRD guide oscillator with Gunn diodes mounted in the dielectric strip

    OpenAIRE

    Sanagi, Minoru; Nogi, Shigeji

    2000-01-01

    Hyper NRD guide oscillators mounted with a single and multiple Gunn diodes have been investigated. The operating mode of the hyper NRD guide can be lower order by optimizing the structure of the guide. The Gunn diodes were arranged in the dielectric strip of the guide. In experiments at X-band, the oscillation frequencies could be varied by a movable shorting plane for the single diode case and an almost perfect power combining was obtained for the double diode case

  16. Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

    Directory of Open Access Journals (Sweden)

    Bisewski Damian

    2016-09-01

    Full Text Available This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.

  17. Planar Schottky barrier mixer diodes for space applications at submillimeter wavelengths

    Science.gov (United States)

    Bishop, W. L.; Crowe, T. W.; Mattauch, R. J.; Ostdiek, P. H.

    1991-01-01

    Available planar diodes for space-based applications at submillimeter wavelengths have not achieved either the required low junction capacitance or the low series resistance-junction capacitance product. Here, the development of a novel planar diode structure that overcomes both of these difficulties is outlined. The characteristics of these Schottky barrier mixer diodes are presented and electron micrographs are shown. The diode structure will allow planar technology to be extended throughout the submillimeter wavelength range.

  18. Experimental evidence of energetic neutrals production in an ion diode

    Energy Technology Data Exchange (ETDEWEB)

    Pushkarev, A.I., E-mail: aipush@mail.ru; Isakova, Y.I.; Khaylov, I.P.

    2015-01-15

    The paper presents several experimental proofs of the formation of energetic charge-exchange neutrals in a self-magnetically insulated ion diode with a graphite cathode. The energetic neutrals are thought to be produced as a result of charge exchange process between accelerated ions and stationary neutral molecules. The experiments have been carried out using both a diode with externally applied magnetic insulation (single-pulse mode: 100 ns, 250–300 kV) and a diode with self-magnetic insulation (double-pulse mode: 300–500 ns, 100–150 kV (negative pulse); 120 ns, 250–300 kV (positive pulse)). The motivation for looking at the neutral component of the ion beam came when we compared two independent methods to measure the energy density of the beam. A quantitative comparison of infrared measurements with signals from Faraday cups and diode voltage was made to assess the presence of neutral atoms in the ion beam. As another proof of charge-exchange effects in ion diode we present the results of statistical analysis of diode performance. It was found that the shot-to shot variation of the energy density in a set of 50–100 shots does not exceed 11%, whilst the same variation for ion current density was 20–30%; suggesting the presence of neutrals in the beam. Moreover, the pressure in the zone of ion beam energy dissipation exceeds the results stated in cited references. The difference between our experimental data and results stated by other authors we attribute to the presence of a low-energy charge-exchange neutral component in the ion beam.

  19. Study of the anode plasma dynamics under the action of a high-power electron beam on epoxy resin

    Science.gov (United States)

    Ananyev, S. S.; Bagdasarov, G. A.; Gasilov, V. A.; Dan'ko, S. A.; Demidov, B. A.; Kazakov, E. D.; Kalinin, Yu. G.; Kurilo, A. A.; Ol'khovskaya, O. G.; Strizhakov, M. G.; Tkachenko, S. I.

    2017-07-01

    Results are presented from experimental studies of plasma dynamics in a diode gap under the action of a high-current relativistic electron beam on epoxy resin at energy densities in the range of 170-860 J/cm2. The plasma expansion was studied by means of an optical streak camera. Three-dimensional numerical simulations in the one-temperature hydrodynamic approximation were also performed. The experimental data are compared with the results of numerical simulations.

  20. Light-emitting diode applications of colloidal CdSe/ZnS quantum dots embedded in TiO{sub 2-{delta}} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Seung-Hee; Huh, Hoon-Hoe; Son, Kee-Chul; Kim, Eui-Tae [Department of Materials Engineering, Chungnam National University, Daeduk Science Town, Daejeon (Korea); Lee, Chang-Soo [Department of Chemical Engineering, Chungnam National University, Daeduk Science Town, Daejeon (Korea); Kim, Kyung-Hyun; Huh, Chul [Electronics and Telecommunications Research Institute, Daeduk Science Town, Daejeon (Korea)

    2009-04-15

    We report the light-emitting diode (LED) characteristics of colloidal core-shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in TiO{sub 2-{delta}} thin films on Si substrate. High-quality CdSe/ZnS QDs were synthesized via a pyrolysis in the range of 220-280 C. The QDs were embedded in TiO{sub 2-{delta}} thin film at 200 C by plasma-enhanced metallorganic chemical vapor deposition. The diode structure of n-TiO{sub 2-{delta}}/QDs/p-Si showed electroluminescence characteristics, indicating the possibility of LED applications of colloidal CdSe/ZnS nanocrystal QDs embedded in oxide films on large-area Si wafer. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Management of gingival hyperpigmentation by semiconductor diode laser.

    Science.gov (United States)

    Gupta, Geeti

    2011-09-01

    Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile). Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO(2) laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

  2. Millimeter Wave Metal-Insulator-Metal Detector/Mixer Diode.

    Science.gov (United States)

    1983-12-01

    AO-A138 391 MILLIMETER WAVE METAL-INSULATOR- METAL DETECTOR /MIXER 1/1 DIODE(VI NORTH CAROLIN A AGRICULTURAL A NO TECHNI CA L STATE UNIV GREENSRO. C TV...163-A I V AFWAL-TR-83-1179 MILLIMETER WAVE METAL-INSULATOR- METAL DETECTOR /MIXER DIODE CHUNG YU NORTH CAROLINA A&T STATE UNIVERSITY GREENSBORO, NORTH...TITLE (ad subsorle.I S. TYPE CrjflT&PEO OER MILLIMETER WAVE May, 1981--July, 1983 METAL-INSULATOR- METAL DETECTOR /MIXER G. PERFORMING ORG. REPORT

  3. Hybrid Light-Emitting Diode Enhanced With Emissive Nanocrystals

    DEFF Research Database (Denmark)

    Kopylov, Oleksii

    This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non...... of the hybrid diode fabrication including process techniques for GaN LED and incorporation of the nanocrystals are presented with the emphasis on the differences with standard LED processing. Results and analysis of optical and electrical characterization including photoluminescence (PL), micro-PL, time...

  4. Electrically driven surface plasmon light-emitting diodes

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

    We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

  5. Computer Processing Of Tunable-Diode-Laser Spectra

    Science.gov (United States)

    May, Randy D.

    1991-01-01

    Tunable-diode-laser spectrometer measuring transmission spectrum of gas operates under control of computer, which also processes measurement data. Measurements in three channels processed into spectra. Computer controls current supplied to tunable diode laser, stepping it through small increments of wavelength while processing spectral measurements at each step. Program includes library of routines for general manipulation and plotting of spectra, least-squares fitting of direct-transmission and harmonic-absorption spectra, and deconvolution for determination of laser linewidth and for removal of instrumental broadening of spectral lines.

  6. Daily check of the electron beams with a diode system

    Energy Technology Data Exchange (ETDEWEB)

    Pilette, P. [Hospital Civil de Charleroi (Belgium). Centre for Radiotherapy

    1995-12-01

    A fast systems to check all the accelerator beams on a daily basis has been developed. A cheap home-made detector, based on non-medical diodes (type 1N5408), has been used since July 1992 to verify all the electron beams every day. The relative energy and Top-cGy correspondence is verified with one single irradiation of less than 1 minute by 6 diodes fixed in a polystyrene phantom. The principle of construction, software implementation and results are presented.

  7. Gummy Smile Correction with Diode Laser: Two Case Reports

    Science.gov (United States)

    Narayanan, Mahesh; Laju, S; Erali, Susil M; Erali, Sunil M; Fathima, Al Zainab; Gopinath, P V

    2015-01-01

    Beautification of smiles is becoming an everyday requirement in dental practice. Apart from teeth, gingiva also plays an important role in smile esthetics. Excessive visualization of gingiva is a common complaint among patients seeking esthetic treatment. A wide variety of procedures are available for correction of excessive gum display based on the cause of the condition. Soft tissue diode laser contouring of gingiva is a common procedure that can be undertaken in a routine dental setting with excellent patient satisfaction and minimal post-operative sequale. Two cases of esthetic crown lengthening with diode laser 810 nm are presented here. PMID:26668491

  8. Three-phase bridge rectifiers with freewheeling diodes

    CERN Document Server

    Hausler, M

    1973-01-01

    Freewheeling diodes are used in controlled rectifiers working in one quadrant only in order to reduce the reactive power and the d.c.- voltage ripple. In addition the freewheeling diodes allow a higher d.c.-current at low d.c.-voltages. The mean value of the freewheeling current depends on the d.c.-current, the load, and the stray-reactance of the rectifier transformer. This paper describes how the freewheeling current can be determined with these parameters. Results for some typical cases are shown in diagrams. (2 refs).

  9. Performance characteristics and optimal analysis of a nonlinear diode refrigerator

    Institute of Scientific and Technical Information of China (English)

    Wang Xiu-Mei; He Ji-Zhou; Liang Hong-Ni

    2011-01-01

    This paper establishes a model of a nonlinear diode refrigerator consisting of two diodes switched in the opposite directions and located in two heat reservoirs with different temperatures. Based on the theory of thermal fluctuations, the expressions of the heat flux absorbed from the heat reservoirs are derived. After the heat leak between the two reservoirs is considered, the cooling rate and the coefficient of performance are obtained analytically. The influence of the heat leak and the temperature ratio on the performance characteristics of the refrigerator is analysed in detail.

  10. Combless broadband terahertz generation with conventional laser diodes.

    Science.gov (United States)

    Molter, D; Wagner, A; Weber, S; Jonuscheit, J; Beigang, R

    2011-03-14

    We present a novel technique to generate a continuous, combless broadband Terahertz spectrum with conventional low-cost laser diodes. A standard time-domain spectroscopy system using photoconductive antennas is pumped by the output of two tunable diode lasers. Using fine tuning for one laser and fine and coarse tuning for the second laser, difference frequency generation results in a continuous broadband THz spectrum. Fast coarse-tuning is achieved by a simple spatial light modulator introduced in an external cavity. The results are compared to multi-mode operation for THz generation.

  11. Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

    OpenAIRE

    Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

    2015-01-01

    Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increa...

  12. Degradation of light emitting diodes: a proposed methodology*

    Institute of Scientific and Technical Information of China (English)

    Sau Koh; Willem Van Driel; G.Q.Zhang

    2011-01-01

    Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters.

  13. Radiation hardness of n-GaN schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Lebedev, A. A., E-mail: shura.lebe@mail.ioffe.ru; Belov, S. V.; Mynbaeva, M. G.; Strel’chuk, A. M.; Bogdanova, E. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Makarov, Yu. N. [Nitride Crystals Group (Russian Federation); Usikov, A. S. [Nitride Crystals Inc. (United States); Kurin, S. Yu.; Barash, I. S.; Roenkov, A. D. [Nitride Crystals Group (Russian Federation); Kozlovski, V. V. [St. Petersburg State Polytechnic University (Russian Federation)

    2015-10-15

    Schottky-barrier diodes with a diameter of ∼10 µm are fabricated on n-GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates. The changes in the parameters of the diodes under irradiation with 15 MeV protons are studied. The carrier removal rate was found to be 130–145 cm{sup –1}. The linear nature of the dependence N = f(D) (N is the carrier concentration, and D, the irradiation dose) shows that compensation of the material is associated with transitions of electrons from shallow donors to deep acceptor levels which are related to primary radiation defects.

  14. Mode locking and spatiotemporal chaos in periodically driven Gunn diodes

    DEFF Research Database (Denmark)

    Mosekilde, Erik; Feldberg, Rasmus; Knudsen, Carsten;

    1990-01-01

    Numerical simulation is applied to study the highly nonlinear-dynamic phenomena that can arise in Gunn diodes by interaction between the internally generated domain mode and an external microwave signal. By adjusting the time of domain formation and the speed of propagation, the internal...... oscillation entrains with the external signal. This produces a devil’s staircase of frequency-locked solutions. At higher microwave amplitudes, period doubling and other forms of mode-converting bifurcations can be seen. In this interval the diode also exhibits spatiotemporal chaos. At still higher microwave...

  15. Characteristic of laser diode beam propagation through a collimating lens.

    Science.gov (United States)

    Xu, Qiang; Han, Yiping; Cui, Zhiwei

    2010-01-20

    A mathematical model of a laser diode beam propagating through a collimating lens is presented. Wave propagation beyond the paraxial approximation is studied. The phase delay of the laser diode wave in passing through the lens is analyzed in detail. The propagation optical field after the lens is obtained from the diffraction integral by the stationary phase method. The model is employed to predict the light intensity at various beam cross sections, and the computed intensity distributions are in a good agreement with the corresponding measurements.

  16. Electrical and optical study of semiconductor laser diodes and materials

    Science.gov (United States)

    Albin, Sacharia

    1987-01-01

    The characterization of a 2-D diode laser array from McDonald Douglas has been completed. The array consisted of 8 linear arrays of approximately 11 mm x 0.18 mm. Each array has between 7 and 8 diodes per mm. The threshold current is approximately 15 amps. The power output vs drive current (above threshold) of the array was measured. A peak power of 50 W was obtained at a drive current of 26 amps. Its far field pattern has a double lobe.

  17. System and method for high power diode based additive manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    El-Dasher, Bassem S.; Bayramian, Andrew; Demuth, James A.; Farmer, Joseph C.; Torres, Sharon G.

    2016-04-12

    A system is disclosed for performing an Additive Manufacturing (AM) fabrication process on a powdered material forming a substrate. The system may make use of a diode array for generating an optical signal sufficient to melt a powdered material of the substrate. A mask may be used for preventing a first predetermined portion of the optical signal from reaching the substrate, while allowing a second predetermined portion to reach the substrate. At least one processor may be used for controlling an output of the diode array.

  18. Theory of piezo-phototronics for light-emitting diodes.

    Science.gov (United States)

    Zhang, Yan; Wang, Zhong Lin

    2012-09-04

    Devices fabricated by using the inner-crystal piezopotential as a "gate" voltage to tune/control the carrier generation, transport, and recombination processes at the vicinity of a p-n junction are named piezo-phototronics. Here, the theory of the photon emission and carrier transport behavior in piezo-phototronic devices is investigated as a p-n junction light-emitting diode. Numerical calculations are given for predicting the photon emission and current-voltage characteristics of a general piezo-phototronic light-emitting diode.

  19. Strain tunable light emitting diodes with germanium P-I-N heterojunctions

    Science.gov (United States)

    Lagally, Max G; Sanchez Perez, Jose Roberto

    2016-10-18

    Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.

  20. 77 FR 21038 - Energy Conservation Program: Test Procedures for Light-Emitting Diode Lamps

    Science.gov (United States)

    2012-04-09

    ... Parts 429 and 430 RIN 1904-AC67 Energy Conservation Program: Test Procedures for Light-Emitting Diode... light-emitting diode (LED) lamps to support implementation of labeling provisions by the Federal Trade... procedures. This rulemaking establishes test procedures that manufacturers of light-emitting diode (LED...

  1. A Novel Current-Mode Full-Wave Rectifier Based on One CDTA and Two Diodes

    Directory of Open Access Journals (Sweden)

    F. Khateb

    2010-09-01

    Full Text Available Precision rectifiers are important building blocks for analog signal processing. The traditional approach based on diodes and operational amplifiers (OpAmps exhibits undesirable effects caused by limited OpAmp slew rate and diode commutations. In the paper, a full-wave rectifier based on one CDTA and two Schottky diodes is presented. The PSpice simulation results are included.

  2. Estimating p-n Diode Bulk Parameters, Bandgap Energy and Absolute Zero by a Simple Experiment

    Science.gov (United States)

    Ocaya, R. O.; Dejene, F. B.

    2007-01-01

    This paper presents a straightforward but interesting experimental method for p-n diode characterization. The method differs substantially from many approaches in diode characterization by offering much tighter control over the temperature and current variables. The method allows the determination of important diode constants such as temperature…

  3. Investigating Bandgap Energies, Materials, and Design of Light-Emitting Diodes

    Science.gov (United States)

    Wagner, Eugene P., II

    2016-01-01

    A student laboratory experiment to investigate the intrinsic and extrinsic bandgaps, dopant materials, and diode design in light-emitting diodes (LEDs) is presented. The LED intrinsic bandgap is determined by passing a small constant current through the diode and recording the junction voltage variation with temperature. A second visible…

  4. Frequency-comb-assisted broadband precision spectroscopy with cascaded diode lasers

    DEFF Research Database (Denmark)

    Liu, Junqiu; Brasch, Victor; Pfeiffer, Martin H. P.;

    2016-01-01

    Frequency-comb-assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this Letter, we present a novel method using cascaded frequency agile diode lasers...

  5. Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

    Science.gov (United States)

    Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

    2017-06-01

    N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

  6. Superluminescent diode versus Fabry-Perot laser diode seeding in pulsed MOPA fiber laser systems for SBS suppression

    Science.gov (United States)

    Melo, M.; Sousa, J. M.; Salcedo, J. R.

    2015-03-01

    We demonstrate the use of a pulsed superluminescent diode (SLD) through direct current injection modulation as seeding source in a master oscillator power amplifier (MOPA) configuration when compared to a Fabry-Perot (FP) laser diode in the same system. The performance limitations imposed by the use of the Fabry-Perot lasers, caused by the backward high peak power pulses triggered due to stimulated Brillouin scattering (SBS) are not observed in the case of the SLD. Compared to conventional Fabry-Perot laser diodes, the SLD provides a smooth and broad output spectrum which is independent of the input pulse parameters. Moreover, the spectrum can be sliced and tailored to the application. Thus, free SBS operation is shown when using the SLD seeder in the same system, allowing for a significant increase on the extractable power and energy.

  7. Dynamics of Dust Aggregates in a Complex Plasma

    Science.gov (United States)

    Davis, Allen; Carmona Reyes, Jorge; Matthews, Lorin; Hyde, Truell

    2012-10-01

    Charged dust aggregates play an important role in many astrophysical phenomena, such as early stages of protostellar and protoplanetary growth, the dynamics of planetary rings and cometary tails, and the formation of noctilucent clouds in earth's upper atmosphere. Dust is also expected to be an unwanted byproduct in the operation of plasma fusion devices, such as ITER. In all of these environments, direct study of the dust aggregates in their in situ environment is extremely difficult, if not impossible. As a model for these complex plasma environments, dust aggregates are formed in a laboratory plasma as monodisperse spheres are accelerated in a self-excited dust density wave. Individual dust particles are perturbed using a diode pumped solid state laser (Coherent VERDI) with their motions recorded by a high-speed camera at 1000 fps. Analysis of the particle motion allows determination of the aggregate characteristics which determine the grain dynamics, such as charge, mass, and gas drag.

  8. Dust generation at interaction of plasma jet with surfaces

    Science.gov (United States)

    Ticos, Catalin; Toader, Dorina; Banu, Nicoleta; Scurtu, Adrian; Oane, Mihai

    2013-10-01

    Coatings of W and C with widths of a few microns will be exposed to plasma jet for studying the erosion of the surface and detachment of micron size dust particles. A coaxial plasma gun has been built inside a vacuum chamber for producing supersonic plasma jets. Its design is based on a 50 kJ coaxial plasma gun which has been successfully used for accelerating hypervelocity dust. Initial shots were carried out for a capacitor bank with C = 12 μF and charged up to 2 kV. Currents of tens of amps were measured with a Rogowsky coil and plasma flow speeds of 4 km/s were inferred from high-speed images of jet propagation. An upgrade consisting in adding capacitors in parallel will be performed in order to increase the energy up to 2 kJ. A coil will be installed at the gun muzzle to compress the plasma flow and increase the energy density of the jet on the sample surface. A CCD camera with a maximum recording speed of 100 k fps and a maximum resolution of 1024 × 1024 pixels was set for image acquisition of the plasma and dust. A laser system used to illuminate the ejected dust from the surface includes a laser diode emitting at 650 nm with a beam power of 25 mW. The authors acknowledge support from EURATOM WP13-IPH-A03-P2-02-BS22.

  9. Sputter-cleaning of an aluminum alloy using a thermionically assisted triode plasma system

    Energy Technology Data Exchange (ETDEWEB)

    Hsieh, J.H., E-mail: jhhsieh@mail.mcut.edu.tw [Dept. of Materials Engineering, Ming Chi University of Technology, Taishan, Taipei 24301, Taiwan ROC (China); Center for Thin Film Technologies and Applications (CTFTA), Ming Chi University of Technology, Taishan, Taipei 24301, Taiwan, ROC (China); Li, C. [Dept. of Biomedical Engineering, National Yang Ming University, Taipei, Taiwan, ROC (China); Center for Thin Film Technologies and Applications (CTFTA), Ming Chi University of Technology, Taishan, Taipei 24301, Taiwan, ROC (China); Liu, S.J. [Dept. of Math. and Sci., National Taiwan Normal University, Linkou 244, Taiwan, ROC (China)

    2013-09-16

    Polished aluminum alloy (6061) samples were cleaned using Ar plasma in a diode or triode plasma system. By monitoring cathode current, the changes of surface state and removal (cleaning) rate were determined and compared based on various setup. A modified mathematical model, based on Berg's reactive sputtering model, is derived and proposed to simulate the cleaning process. The results show that it is possible to sputter-clean the substrate under a triode setup with low bias and high ion bombardment rate (i.e. −500 V, triode, 1.3 Pa). This triode cleaning process was comparable with high bias and high working pressure diode process (i.e. −2500 V, diode, 3.3 Pa). Cleaning with high energy particle bombardment can create rough surface in nano-scale, although with the similar efficiency. Also, according to the regressive fitting on the cathode current–time curve, it is found that the average secondary electron yield for the oxide compound is around 0.33 if the average secondary electron yield for aluminum metal is 0.1. - Highlights: • Plasma with various ion energies could be generated using a triode system. • A model was built to explain the plasma cleaning process. • The results are believed to be useful in cleaning precision metal parts. • Secondary electron yield could be estimated using the adopted approach. • By using a triode system, the surface roughness could be controlled as will.

  10. Amplitude-stabilized frequency-modulated laser diode and its interferometric sensing applications.

    Science.gov (United States)

    Takahashi, Y; Yoshino, T; Ohde, N

    1997-08-20

    A direct frequency-modulated (FM) laser diode light source without light power variation is developed. The amplitude variation of the FM laser diode is compensated by means of a feedback system with use of a superluminescent diode as an external light power controller. Output power greater than 1 mW is obtained at the modulation frequency to 5 kHz with a >10 stabilization factor. By use of the amplitude-stabilized FM laser diode, we measured subfringes with high accuracy in FM continuous wave interferometry, increased the dynamic range of the displacement measurement, and improved the stabilization factor in the laser diode feedback interferometer.

  11. Rectified diode response of a multimode quantum cascade laser integrated terahertz transceiver

    CERN Document Server

    Dyer, Gregory C; Cich, Michael J; Grine, Albert D; Fuller, Charles T; Reno, John L; Wanke, Michael C

    2016-01-01

    We characterized the DC transport response of a diode embedded in a THz quantum cascade laser as the laser current was changed. The overall response is described by parallel contributions from the rectification of the laser field due to the non-linearity of the diode I-V and from thermally activated transport. Sudden jumps in the diode response when the laser changes from single mode to multi-mode operation, with no corresponding jumps in output power, suggest that the coupling between the diode and laser field depends on the spatial distribution of internal fields. The results demonstrate conclusively that the internal laser field couples directly to the integrated diode.

  12. Characteristics of a GaN-based Gunn diode for THz signal generation

    Science.gov (United States)

    Parida, R. K.; Agrawala, N. C.; Dash, G. N.; Panda, A. K.

    2012-08-01

    A generalized large-signal computer simulation program for a Gunn oscillator has been developed. The properties of a Gunn diode oscillator based on the widely explored GaN, are investigated using the developed program. The results show some interesting properties in GaN Gunn diodes which are not seen in GaAs and InP diodes. An output power of 1400 kW/cm2 is achieved from the GaN Gunn diode, as compared to 4.9 kW/cm2 from a GaAs diode.

  13. Characteristics of a GaN-based Gunn diode for THz signal generation

    Institute of Scientific and Technical Information of China (English)

    R K Parida; N C Agrawala; G N Dash; A K Panda

    2012-01-01

    A generalized large-signal computer simulation program for a Gunn oscillator has been developed.The properties of a Gunn diode oscillator based on the widely explored GaN,are investigated using the developed program.The results show some interesting properties in GaN Gunn diodes which are not seen in GaAs and lnP diodes.An output power of 1400 kW/cm2 is achieved from the GaN Gunn diode,as compared to 4.9 kW/cm2 from a GaAs diode.

  14. The influence of edge effects on the determination of the doping profile of silicon pad diodes

    Science.gov (United States)

    Fretwurst, E.; Garutti, E.; Hufschmidt, M.; Klanner, R.; Kopsalis, I.; Schwandt, J.

    2017-09-01

    Edge effects for square p+ n pad diodes with guard rings, fabricated on high-ohmic silicon, are investigated. Using capacitance-voltage measurements of two pad diodes with different areas, the planar and the edge contributions to the diode capacitance are determined separately. It is found that the edge contributions are significant and that they strongly influence the determination of the doping concentration using capacitance-voltage measurements. After edge correction, the bulk doping of the pad diodes is found to be uniform within ± 1.5 %, which agrees with expectations. The edge-correction method is verified using TCAD simulations of two circular pad diodes with different radii.

  15. Analysis of diodes used as precision power detectors above the square law region

    DEFF Research Database (Denmark)

    Guldbrandsen, Tom

    1990-01-01

    The deviation from square law found in diode power detectors at moderate power levels has been modeled for a general system consisting of a number of diode detectors connected to a common arbitrary linear passive network, containing an approximately sinusoidal source. This situation covers the case...... of the six-port. The diodes are isolated from each other at DC. No assumption has been made about diode impedances, so that the diodes are interacting with the network as well as with each other at the fundamental frequency and at the harmonics. By applying the model the deviation can be eliminated...

  16. Toward inkjet printing of small molecule organic light emitting diodes

    NARCIS (Netherlands)

    Gorter, H.; Coenen, M.J.J.; Slaats, M.W.L.; Ren, M.; Lu, W.; Kuijpers, C.J.; Groen, W.A.

    2013-01-01

    Thermal evaporation is the current standard for the manufacture of small molecule organic light emitting diodes (smOLEDs), but it requires vacuum process, complicated shadow masks and is inefficient in material utilization, resulting in high cost of ownership. As an alternative, wet solution deposit

  17. Role of diode lasers in oro-facial pain management.

    Science.gov (United States)

    Javed, F; Kellesarian, S V; Romanos, G E

    2017-01-01

    With the increasing use of low level laser therapy (LLLT) in clinical dentistry, the aim of the present study was to assess the effectiveness of diode lasers in the management of orofacial pain. Indexed databases were searched without language and time restrictions up to and including July 2016 using different combinations of the following key words: oral, low level laser therapy, dental, pain, diode lasers, discomfort and analgesia. From the literature reviewed it is evident that LLLT is effective compared to traditional procedures in the management of oro-facial pain associated to soft tissue and hard tissue conditions such as premalignant lesions, gingival conditions and dental extractions. However, it remains to be determined which particular wavelength will produce the more favorable and predictable outcome in terms of pain reduction. It is highly recommended that further randomized control trials with well-defined control groups should be performed to determine the precise wavelengths of the diode lasers for the management of oro-facial pain. Within the limits of the present review, it is concluded that diode lasers therapy is more effective in the management of oro-facial pain compared to traditional procedures.

  18. Device Physics of White Polymer Light-Emitting Diodes

    NARCIS (Netherlands)

    Nicolai, Herman T.; Hof, Andre; Blom, Paul W. M.

    2012-01-01

    The charge transport and recombination in white-emitting polymer light- emitting diodes (PLEDs) are studied. The PLED investigated has a single emissive layer consisting of a copolymer in which a green and red dye are incorporated in a blue backbone. From single-carrier devices the effect of the gre

  19. Dichroic mirror for diode pumped YAG:Nd-laser

    DEFF Research Database (Denmark)

    Dinca, Andreea; Skettrup, Torben; Lupei, V.

    1996-01-01

    The paper describes the design and realization of a dichroic mirror for a diode pumped YAG:Nd laser. The mirror is deposed on an optical glass substrate and works in optical contact with the laser crystal. The design was performed by admittance matching of the basic stack with the adjacent media...

  20. Effects of thermal cycling on aluminum metallization of power diodes

    DEFF Research Database (Denmark)

    Brincker, Mads; Pedersen, Kristian Bonderup; Kristensen, Peter Kjær

    2015-01-01

    Reconstruction of aluminum metallization on top of power electronic chips is a well-known wear out phenomenon under power cycling conditions. However, the origins of reconstruction are still under discussion. In the current study, a method for carrying out passive thermal cycling of power diodes...

  1. Giant Thermal Rectification from Polyethylene Nanofiber Thermal Diodes.

    Science.gov (United States)

    Zhang, Teng; Luo, Tengfei

    2015-09-01

    The realization of phononic computing is held hostage by the lack of high-performance thermal devices. Here, it is shown through theoretical analysis and molecular dynamics simulations that unprecedented thermal rectification factors (as large as 1.20) can be achieved utilizing the phase-dependent thermal conductivity of polyethylene nanofibers. More importantly, such high thermal rectifications only need very small temperature differences (rectification factors of the polymer nanofiber diodes range from 12 to 25-much larger than those of other thermal diodes (<8). The polymer nanofiber thermal diode consists of a crystalline portion whose thermal conductivity is highly phase-sensitive and a cross-linked portion which has a stable phase. Nanoscale size effect can be utilized to tune the phase transition temperature of the crystalline portion, enabling thermal diodes capable of operating at different temperatures. This work will be instrumental to the design of high performance, inexpensive, and easily processible thermal devices, based on which thermal circuits can be built to ultimately enable phononic computing.

  2. Silicon light-emitting diode antifuse: properties and devices

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.

    2006-01-01

    This paper reviews our research on the silicon light-emitting diode antifuse, a tiny source featuring a full white-light spectrum. Optical and electrical properties of the device are discussed together with the modelling of the spectral emission, explaining the emitting mechanism of the device. An e

  3. Atom probe tomography of a commercial light emitting diode

    Science.gov (United States)

    Larson, D. J.; Prosa, T. J.; Olson, D.; Lefebvre, W.; Lawrence, D.; Clifton, P. H.; Kelly, T. F.

    2013-11-01

    The atomic-scale analysis of a commercial light emitting diode device purchased at retail is demonstrated using a local electrode atom probe. Some of the features are correlated with transmission electron microscopy imaging. Subtle details of the structure that are revealed have potential significance for the design and performance of this device.

  4. Tunneling spectroscopy of a p-i-n diode interface

    Energy Technology Data Exchange (ETDEWEB)

    Loth, Sebastian; Wenderoth, Martin; Teichmann, Karen; Homoth, Jan; Loeser, Karolin; Ulbrich, Rainer G. [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany); Malzer, Stefan; Doehler, Gottfried H. [Universitaet Erlangen-Nuernberg (Germany). Max-Planck-Research Group, Institute of Optics, Information, and Photonics

    2008-07-01

    The performance of modern semiconductor devices is largely influenced by the spatial distribution of dopants in the device's active region on the nanoscale. Since the late 80's Scanning Tunneling Microscopy (STM) was employed to study the local properties of p-n interfaces. Most studies were carried out on p-n superlattices allowing the investigation of intrinsic features accessible without applied bias across the diode. Here, a single GaAs p-i-n diode heterostructure is investigated with cross-sectional STM (X-STM) in a three-terminal configuration. External source and drain contacts control the electric field across the junction. Then, the diode's active region is mapped with atomic resolution. Local I(V)-spectroscopy (STS) directly resolves the band edge alignment from p to n for different diode bias conditions. The effect of the external electric field on the spatial and spectral images of individual dopant atoms in the active layer is discussed.

  5. Modelling and Simulation of the Diode Split Transformer

    DEFF Research Database (Denmark)

    Østergaard, Leo

    a significant influence on the picture quality. The most critical component is undoubtedly the diode split transformer (DST). Therefore, if developing a simulation model of the DST is possible, a significant step has been taken in the attempt to model the entire horizontal deflection circuit and to obtain...

  6. Local mechanical stress relaxation of Gunn diodes irradiated by protons

    Science.gov (United States)

    Gradoboev, A. V.; Tesleva, E. P.

    2017-05-01

    The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40-60) MeV with an absorbed dose of (1-6)·102 Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production.

  7. Vertical III-nitride thin-film power diode

    Energy Technology Data Exchange (ETDEWEB)

    Wierer, Jr., Jonathan; Fischer, Arthur J.; Allerman, Andrew A.

    2017-03-14

    A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.

  8. Diode-pumped laser with improved pumping system

    Science.gov (United States)

    Chang, Jim J.

    2004-03-09

    A laser wherein pump radiation from laser diodes is delivered to a pump chamber and into the lasing medium by quasi-three-dimensional compound parabolic concentrator light channels. The light channels have reflective side walls with a curved surface and reflective end walls with a curved surface. A flow tube between the lasing medium and the light channel has a roughened surface.

  9. High Power Diode Lasers with External Feedback: Overview and Prospects

    DEFF Research Database (Denmark)

    Chi, Mingjun; Petersen, Paul Michael

    2012-01-01

    In summary, different external-cavity feedback techniques to improve the spatial beam quality and narrow the linewidth of the output beam from both BALs and TDLs are presented. Broad-area diode laser system with external-cavity feedback around 800 nm can produce several Watts of output power...

  10. Quantum thermal rectification to design thermal diodes and transistors

    Energy Technology Data Exchange (ETDEWEB)

    Joulain, Karl; Ezzahri, Younes; Ordonez-Miranda, Jose [Univ. de Poitiers, Futuroscope Chasseneuil (France). Inst. Pprime, CNRS

    2017-05-01

    We study in this article how heat can be exchanged between two-level systems, each of them being coupled to a thermal reservoir. Calculations are performed solving a master equation for the density matrix using the Born-Markov approximation. We analyse the conditions for which a thermal diode and a thermal transistor can be obtained as well as their optimisation.

  11. In-volume heating using high-power laser diodes

    NARCIS (Netherlands)

    Denisenkov, V.S.; Kiyko, V.V.; Vdovin, G.V.

    2015-01-01

    High-power lasers are useful instruments suitable for applications in various fields; the most common industrial applications include cutting and welding. We propose a new application of high-power laser diodes as in-bulk heating source for food industry. Current heating processes use surface

  12. Organic light emitting diodes with spin polarized electrodes

    NARCIS (Netherlands)

    Arisi, E.; Bergenti, I.; Dediu, V.; Loi, M.A.; Muccini, M.; Murgia, M.; Ruani, G.; Taliani, C.; Zamboni, R.

    2003-01-01

    Electrical and optical properties of Alq3 based organic light emitting diodes with normal and spin polarized electrodes are presented. Epitaxial semitransparent highly spin polarized La0.7Sr0.3MnO3 were used as hole injector, substituting the traditional indium tin oxide electrode. A comparison of e

  13. GaAs IMPATT diodes for microstrip circuit applications.

    Science.gov (United States)

    Wisseman, W. R.; Tserng, H. Q.; Shaw, D. W.; Mcquiddy, D. N.

    1972-01-01

    GaAs IMPATT diodes with plated heat sinks are shown to be particularly well suited for microstrip circuit applications. Details of materials growth and device fabrication procedures are given, and experimental results are presented for a GaAs IMPATT microstrip oscillator operating at X band.

  14. The Light-Emitting Diode as a Light Detector

    Science.gov (United States)

    Baird, William H.; Hack, W. Nathan; Tran, Kiet; Vira, Zeeshan; Pickett, Matthew

    2011-01-01

    A light-emitting diode (LED) and operational amplifier can be used as an affordable method to provide a digital output indicating detection of an intense light source such as a laser beam or high-output LED. When coupled with a microcontroller, the combination can be used as a multiple photogate and timer for under $50. A similar circuit is used…

  15. Toward inkjet printing of small molecule organic light emitting diodes

    NARCIS (Netherlands)

    Gorter, H.; Coenen, M.J.J.; Slaats, M.W.L.; Ren, M.; Lu, W.; Kuijpers, C.J.; Groen, W.A.

    2013-01-01

    Thermal evaporation is the current standard for the manufacture of small molecule organic light emitting diodes (smOLEDs), but it requires vacuum process, complicated shadow masks and is inefficient in material utilization, resulting in high cost of ownership. As an alternative, wet solution deposit

  16. Gunn diodes and devices (bibliography for 1978-1980)

    Science.gov (United States)

    Yelenskiy, Y. G.; Kosov, A. S.; Strukov, I. A.

    1981-01-01

    A listing of about 500 works from Soviet and foreign scientific literature on Gunn diodes and devices based on them is presented. The bibliography includes publications in which various questions pertinent to all (or several) types of semiconductor instruments in the superhigh frequency range are mentioned. A subject index is included.

  17. Magnetic frequency tuning of the microwave Gunn diode oscillator

    OpenAIRE

    Gorbatov, Sergey S.; A.A. Semenov; Usanov, Dmitry A.; Sorokin, A. N.; Kvasko, Vladimir Yu.

    2009-01-01

    It has been found experimentally that the oscillation frequency of a Gunn diode placed in the low-dimensional resonance system “metal pin–closely set short-circuiter” can be effectively controlled by magnetic field applied in the normal direction with respect to the waveguide wide wall.

  18. Spectrometry and dosimetry of fast neutrons using pin diode detectors

    Energy Technology Data Exchange (ETDEWEB)

    Zaki Dizaji, H., E-mail: hz.dizaji@znu.ac.ir [Physics Department, Faculty of Science, Zanjan University, Zanjan (Iran, Islamic Republic of); Kakavand, T. [Physics Department, Faculty of Science, International Imam Khomeini University, Qazvin (Iran, Islamic Republic of); Abbasi Davani, F. [Radiation Application Department, Shahid Beheshti University, Tehran (Iran, Islamic Republic of)

    2014-03-21

    Elastic scattering of light nuclei, especially hydrogen, is widely used for detection of fast neutrons. Semiconductor devices based on silicon detectors are frequently used for different radiation detections. In this work, a neutron spectrometer consisting of a pin diode coupled with a polyethylene converter and aluminum degrader layers has been developed. Aluminum layers are used as discriminators of different neutron energies for detectors. The response of the converter–degrader–pin diode configuration, the optimum thickness of the converter and the degrader layers have been extracted using MCNP and SRIM simulation codes. The possibility of using this type of detector for fast neutron spectrometry and dosimetry has been investigated. A fairly good agreement was seen between neutron energy spectrum and dose obtained from our configurations and these specifications from an {sup 241}Am–Be neutron source. - Highlights: • Silicon pin diodes are applied to the fast neutron detection. • The technique of converter degrader pin diode is used for spectrometry of fast neutrons. • The method is used for dosimetry of fast neutron.

  19. Pseudoepitheliomatous hyperplasia after diode laser oral surgery. An experimental study

    Science.gov (United States)

    Seoane, Juan; González-Mosquera, Antonio; García-Martín, José-Manuel; García-Caballero, Lucía; Varela-Centelles, Pablo

    2015-01-01

    Background To examine the process of epithelial reparation in a surgical wound caused by diode laser. Material and Methods An experimental study with 27 Sprage-Dawley rats was undertaken. The animals were randomly allocated to two experimental groups, whose individuals underwent glossectomy by means of a diode laser at different wattages, and a control group treated using a number 15 scalpel blade. The animals were slaughtered at the 2nd, 7th, and 14th day after glossectomy. The specimens were independently studied by two pathologists (blinded for the specimens’ group). Results At the 7th day, re-epithelisation was slightly faster for the control group (conventional scalpel) (p=0.011). At the 14th day, complete re-epithelization was observed for all groups. The experimental groups displayed a pseudoepitheliomatous hyperplasia. Conclusions It is concluded that, considering the limitations of this kind of experimental studies, early re-epithelisation occurs slightly faster when a conventional scalpel is used for incision, although re-epithelisation is completed in two weeks no matter the instrument used. In addition, pseudoepitheliomatous hyperplasia is a potential event after oral mucosa surgery with diode laser. Knowledge about this phenomenon (not previously described) may prevent diagnostic mistakes and inadequate treatment approaches, particularly when dealing with potentially malignant oral lesions. Key words:Diode laser, animal model, oral biopsy, oral cancer, oral precancer, pseudoepitheliomatous hyperplasia. PMID:26116841

  20. Power blue and green laser diodes and their applications

    Science.gov (United States)

    Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

    2013-03-01

    InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

  1. Terahertz pulse detection by the GaAs Schottky diodes

    Science.gov (United States)

    Laperashvili, Tina; Kvitsiani, Orest; Imerlishvili, Ilia; Laperashvili, David

    2010-06-01

    We present the results of experimental studies of physical properties of the detection process of GaAs Schottky diodes for terahertz frequency radiation. The development of technology in the THz frequency band has a rapid progress recently. Considered as an extension of the microwave and millimeter wave bands, the THz frequency offers greater communication bandwidth than is available at microwave frequencies. The Schottky barrier contact has an important role in the operation of many GaAs devices. GaAs Schottky diodes have been the primary nonlinear device used in millimeter and sub millimeter wave detectors and receivers. GaAs Schottky diodes are especially interesting due to their high mobility transport characteristics, which allows for a large reduction of the resistance-capacitance (RC) time constant and thermal noise. In This work are investigated the electrical and photoelectric properties of GaAs Schottky diodes. Samples were obtained by deposition of different metals (Au, Ni, Pt, Pd, Fe, In, Ga, Al) on semiconductor. For fabrication metal-semiconductor (MS) structures is used original method of metal electrodepositing. In this method electrochemical etching of semiconductor surface occurs just before deposition of metal from the solution, which contains etching material and metal ions together. For that, semiconductor surface cleaning processes and metal deposition carries out in the same technological process. In the experiments as the electrolyte was used aqueous solution of chlorides. Metal deposition was carried out at room temperature.

  2. Tuning the colour of white polymer light emitting diodes

    NARCIS (Netherlands)

    Kok, M.M. de; Sarfert, W.; Paetzold, R.

    2010-01-01

    Colour tuning of white polymer light emitting diode (LED) light sources can be attained by various methods at various stages in the production process of the lamps and/or by the design of the active material incorporated in the LEDs. In this contribution we will describe the methods and discuss the

  3. In-volume heating using high-power laser diodes

    NARCIS (Netherlands)

    Denisenkov, V.S.; Kiyko, V.V.; Vdovin, G.V.

    2015-01-01

    High-power lasers are useful instruments suitable for applications in various fields; the most common industrial applications include cutting and welding. We propose a new application of high-power laser diodes as in-bulk heating source for food industry. Current heating processes use surface heatin

  4. Tuning the colour of white polymer light emitting diodes

    NARCIS (Netherlands)

    Kok, M.M. de; Sarfert, W.; Paetzold, R.

    2010-01-01

    Colour tuning of white polymer light emitting diode (LED) light sources can be attained by various methods at various stages in the production process of the lamps and/or by the design of the active material incorporated in the LEDs. In this contribution we will describe the methods and discuss the

  5. Vertical III-nitride thin-film power diode

    Science.gov (United States)

    Wierer, Jr., Jonathan; Fischer, Arthur J.; Allerman, Andrew A.

    2017-03-14

    A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.

  6. High-power non linear frequency converted laser diodes

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Andersen, Peter E.; Hansen, Anders Kragh;

    2015-01-01

    We present different methods of generating light in the blue-green spectral range by nonlinear frequency conversion of tapered diode lasers achieving state-of-the-art power levels. In the blue spectral range, we show results using single-pass second harmonic generation (SHG) as well as cavity...

  7. Fast Tunable Wavelength Sources Based on the Laser Diode Array

    Institute of Scientific and Technical Information of China (English)

    Sung-Chan; Cho; Hyun; Ha; Hong; Byoung-Whi; Kim

    2003-01-01

    We report a demonstration of a fast wavelength tunable source (TWS) based on the laser diode array coupled to the arrayed waveguide grating (AWG) multiplexer. The switching and optical characteristics of TWS make it a candidate for implementing the wavelength-division space switch fabric for an optical packet/burst switching.

  8. Laser diode ignition characteristics of Zirconium Potassium Perchlorate (ZPP)

    Science.gov (United States)

    Callaghan, Jerry D.; Tindol, Scot

    1993-01-01

    Hi-Shear Technology, Corp., (HSTC) has designed and built a Laser equivalent NASA Standard Initiator (LNSI). Langlie tests with a laser diode output initiating ZPP were conducted as a part of this effort. The test parameters include time to first pressure, laser power density requirements, and ignition time. The data from these laser tests on ZPP are presented.

  9. Computer-Assisted Experiments with a Laser Diode

    Science.gov (United States)

    Kraftmakher, Yaakov

    2011-01-01

    A laser diode from an inexpensive laser pen (laser pointer) is used in simple experiments. The radiant output power and efficiency of the laser are measured, and polarization of the light beam is shown. The "h/e" ratio is available from the threshold of spontaneous emission. The lasing threshold is found using several methods. With a…

  10. A super junction SiGe low-loss fast switching power diode

    Institute of Scientific and Technical Information of China (English)

    Ma Li; Gao Yong

    2009-01-01

    This paper proposes a novel super junction (S J) SiGe switching power diode which has a columnar structure of alternating p-and n- doped pillar substituting conventional n- base region and has far thinner strained SiGe p+layer to overcome the drawbacks of existing Si switching power diode. The SJ SiCe diode can achieve low specific on-resistance, high breakdown voltages and fast switching speed. The results indicate that the forward voltage drop of SJ SiGe diode is much lower than that of conventional Si power diode when the operating current densities do not exceed 1000 A/cm2which is very good for getting lower operating loss. The forward voltage drop of the Si diode is 0.66 V whereas that of the SJ SiGe diode is only 0.52 V at operating current density of 10 A/cm2The breakdown voltages are 203 V for the former and 235 V for the latter. Compared with the conventional Si power diode, the reverse recovery time of SJ SiGe diode with 20 per cent Ge content is shortened by above a half and the peak reverse current is reduced by over 15%. The SJ SiGe diode can remarkably improve the characteristics of power diode by combining the merits of both SJ structure and SiGe material.

  11. Plasma Free Metanephrines

    Science.gov (United States)

    ... be limited. Home Visit Global Sites Search Help? Plasma Free Metanephrines Share this page: Was this page helpful? Also known as: Plasma Metanephrines Formal name: Fractionated Plasma Free Metanephrines (Metanephrine ...

  12. Improved plasma accelerator

    Science.gov (United States)

    Cheng, D. Y.

    1971-01-01

    Converging, coaxial accelerator electrode configuration operates in vacuum as plasma gun. Plasma forms by periodic injections of high pressure gas that is ionized by electrical discharges. Deflagration mode of discharge provides acceleration, and converging contours of plasma gun provide focusing.

  13. Effect of dielectric barrier on rectification, injection and transport properties of printed organic diodes

    Science.gov (United States)

    Lilja, K. E.; Majumdar, H. S.; Lahtonen, K.; Heljo, P.; Tuukkanen, S.; Joutsenoja, T.; Valden, M.; Österbacka, R.; Lupo, D.

    2011-07-01

    Rectification ratios of 105 were observed in printed organic copper/polytriarylamine (PTAA)/silver diodes with a thin insulating barrier layer at the copper/PTAA interface. To clarify the origin of the high rectification ratio in the diodes, the injection, transport and structure of the diodes with two different copper cathodes were examined using impedance spectroscopy and x-ray photoelectron spectroscopy (XPS). The impedance data confirm that the difference in diode performance arises from the copper/PTAA interface. The XPS measurements show that the copper surface in both diode structures is covered by a layer of Cu2O topped by an organic layer. The organic layer is thicker on one of the surfaces, which results in lower reverse currents and higher rectification ratios in the printed diodes. We suggest a model where a dipole at the dual insulating layer induces a shift in the semiconductor energy levels explaining the difference between the diodes with different cathodes.

  14. Plasma physics and fusion plasma electrodynamics

    CERN Document Server

    Bers, Abraham

    2016-01-01

    Plasma is a ubiquitous state of matter at high temperatures. The electrodynamics of plasmas encompasses a large number of applications, from understanding plasmas in space and the stars, to their use in processing semiconductors, and their role in controlled energy generation by nuclear fusion. This book covers collective and single particle dynamics of plasmas for fully ionized as well as partially ionized plasmas. Many aspects of plasma physics in current fusion energy generation research are addressed both in magnetic and inertial confinement plasmas. Linear and nonlinear dynamics in hydrodynamic and kinetic descriptions are offered, making both simple and complex aspects of the subject available in nearly every chapter. The approach of dividing the basic aspects of plasma physics as "linear, hydrodynamic descriptions" to be covered first because they are "easier", and postponing the "nonlinear and kinetic descriptions" for later because they are "difficult" is abandoned in this book. For teaching purpose...

  15. Frequency Response of Modulated Electroluminescence of Light-Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    FENG Lie-Feng; LI Yang; LI Ding; WANG Cun-Da; ZHANG Guo-Yi; YAO Dong-Sheng; LIU Wei-Fang; XING Peng-Fei

    2011-01-01

    Frequency responses of modulated electroluminescence (EL) of light-emitting diodes were measured using a testing setup.With increasing frequency of the ac signal,the relative light intensity (RLI) clearly decreases.Furthermore,a peculiar asynchrony between the RLI and ac small-signal is observed.At frequencies higher than 10kHz,the RLI clearly lags behind the ac signal and the absolute value of the lagging angle is nearly proportional to the signal frequency.Using the classical recombination model of light-emitting diodes under ac small-signal modulation,these abnormal characteristics of modulated EL can be clearly explained.High-power light-emitting diodes (LEDs) have received great attention recently owing to their applications in energy-saving lights,display items and many other fields;therefore,the optical and electrical characteristics of LEDs at forward bias hold significant potential for research.[1-4] However,for a new kind of light emission device,the general research on its performance focuses on the light emission and dc currentvoltage (I-V) characteristics.%Frequency responses of modulated electroluminescence (EL) of light-emitting diodes were measured using a testing setup. With increasing frequency of the ac signal, the relative light intensity (RLI) clearly decreases. Furthermore, a peculiar asynchrony between the RLI and ac small-signal is observed. At frequencies higher than 10kHz, the RLI clearly lags behind the ac signal and the absolute value of the lagging angle is nearly proportional to the signal frequency. Using the classical recombination model of light-emitting diodes under ac small-signal modulation, these abnormal characteristics of modulated EL can be clearly explained.

  16. Polarization/Spatial Combining of Laser-Diode Pump Beams

    Science.gov (United States)

    Gelsinger, Paul; Liu, Duncan

    2008-01-01

    A breadboard version of an optical beam combiner is depicted which make it possible to use the outputs of any or all of four multimode laser diodes to pump a non-planar ring oscillator (NPRO) laser. The output of each laser diode has a single-mode profile in the meridional plane containing an axis denoted the 'fast' axis and a narrower multimode profile in the orthogonal meridional plane, which contains an axis denoted the 'slow' axis and a narrower multimode profile in the orthogonal meridional plane, which contains an axis denoted the 'slow' axis. One of the purposes served by the beam-combining optics is to reduce the fast-axis numerical aperture (NA) of the laser-diode output to match the NA of the optical fiber. Along the slow axis, the unmodified laser-diode NA is already well matched to the fiber optic NA, so no further slow-axis beam shaping is needed. In this beam combiner, the laser-diode outputs are collimated by aspherical lenses, then half-wave plates and polarizing beam splitters are used to combine the four collimated beams into two beams. Spatial combination of the two beams and coupling into the optical fiber is effected by use of anamorphic prisms, mirrors, and a focusing lens. The anamorphic prisms are critical elements in the NA-matching scheme, in that they reduce the fast-axis beam width to 1/6 of its original values. Inasmuch as no slow-axis beam shaping is needed, the collimating and focusing lenses are matched for 1:1 iumaging. Because these lenses are well corrected for infinite conjugates the combiner offers diffraction-limited performance along both the fast and slow axes.

  17. A model of the generation and transport of ozone in high-tension nozzle driven corona inside a novel diode.

    Science.gov (United States)

    Vijayan, T; Patil, Jagadish G

    2012-12-01

    The genesis and transport of ozone (O(3)) are investigated in a novel plasma diode and described in this paper. The innovative cathode (K) of this axial symmetric diode which operated at the high voltage (φ(0)), has a large number of sharpened nozzles located on different radial planes of its central tubular-mast and is encircled by the anode (A). The nozzles played the dual role of oxygen (O(2)) injection as well as creation of high electric field (E) in the A-K gap, enabled the formation of a cold corona. Electrons in the corona under the influence of E moved towards anode, collided with O(2) and created the O radicals. O in turn joined the free O(2) and formed O(3). The evolution of O(3) here is modeled in various O(2) pressure (P), electron density (n(e)), and temperature (T) in terms of the major reaction modes involving e, O, O(2), and O(3). Typical steady state O(3) density attained so in P ~ bar, n(e) ~ 10(15) m(-3) and T ~ 300 K is over 10(25) m(-3) and that of O lower ~10(20) m(-3). Both the O and O(3) densities increased with an enhanced n(e) of avalanche multiplications in corona. O(3) increased also with a higher P but the temporal O reversed in trend midway and reduced with P towards the steady state. A sharp decline in diode resistance with smaller A-K gap induced finite discharge current and led to the undesired heating of corona. It is shown that the O(3) density reduced with the temperature rise but O density reduced with the T rise up to 500 K and then rose modestly with the further T increase.

  18. Lifetime of anode polymer in magnetically insulated ion diodes for high-intensity pulsed ion beam generation.

    Science.gov (United States)

    Zhu, X P; Dong, Z H; Han, X G; Xin, J P; Lei, M K

    2007-02-01

    Generation of high-intensity pulsed ion beam (HIPIB) has been studied experimentally using polyethylene as the anode polymer in magnetically insulated ion diodes (MIDs) with an external magnetic field. The HIPIB is extracted from the anode plasma produced during the surface discharging process on polyethylene under the electrical and magnetic fields in MIDs, i.e., high-voltage surface breakdown (flashover) with bombardments by electrons. The surface morphology and the microstructure of the anode polymer are characterized using scanning electron microscopy and differential scanning calorimetry, respectively. The surface roughening of the anode polymer results from the explosive release of trapped gases or newly formed gases under the high-voltage discharging, leaving fractured surfaces with bubble formation. The polyethylene in the surface layer degrades into low-molecular-weight polymers such as polyethylene wax and paraffin under the discharging process. Both the surface roughness and the fraction of low molecular polymers apparently increase as the discharging times are prolonged for multipulse HIPIB generation. The changes in the surface morphology and the composition of anode polymer lead to a noticeable decrease in the output of ion beam intensity, i.e., ion current density and diode voltage, accompanied with an increase in instability of the parameters with the prolonged discharge times. The diode voltage (or surface breakdown voltage of polymer) mainly depends on the surface morphology (or roughness) of anode polymers, and the ion current density on the composition of anode polymers, which account for the two stages of anode polymer degradation observed experimentally, i.e., stage I which has a steady decrease of the two parameters and stage II which shows a slow decrease, but with an enhanced fluctuation of the two parameters with increasing pulses of HIPIB generation.

  19. A model of the generation and transport of ozone in high-tension nozzle driven corona inside a novel diode

    Science.gov (United States)

    Vijayan, T.; Patil, Jagadish G.

    2012-12-01

    The genesis and transport of ozone (O3) are investigated in a novel plasma diode and described in this paper. The innovative cathode (K) of this axial symmetric diode which operated at the high voltage (ϕ0), has a large number of sharpened nozzles located on different radial planes of its central tubular-mast and is encircled by the anode (A). The nozzles played the dual role of oxygen (O2) injection as well as creation of high electric field (E) in the A-K gap, enabled the formation of a cold corona. Electrons in the corona under the influence of E moved towards anode, collided with O2 and created the O radicals. O in turn joined the free O2 and formed O3. The evolution of O3 here is modeled in various O2 pressure (P), electron density (ne), and temperature (T) in terms of the major reaction modes involving e, O, O2, and O3. Typical steady state O3 density attained so in P ˜ bar, ne ˜ 1015 m-3 and T ˜ 300 K is over 1025 m-3 and that of O lower ˜1020 m-3. Both the O and O3 densities increased with an enhanced ne of avalanche multiplications in corona. O3 increased also with a higher P but the temporal O reversed in trend midway and reduced with P towards the steady state. A sharp decline in diode resistance with smaller A-K gap induced finite discharge current and led to the undesired heating of corona. It is shown that the O3 density reduced with the temperature rise but O density reduced with the T rise up to 500 K and then rose modestly with the further T increase.

  20. Diode Dynamics, Beam Generation and Transport and Plasma Erosion Opening Switch Development.

    Science.gov (United States)

    1983-05-17

    ortis f Th fluirh05t Corfuntc~ 2on vsa t useon Of IhO-M- 2.I,; Z A.ihui at~ onda . in!.i per o ogI.ti G..ir I piaer., f ,...~aOl.i~y.2t.110. r C..CuL -rS...S-S)/’So, on in- Berkeley Laboratory Report No. 5543 (unpublished). ternal energy per gram for aluminum. 4G. Cooperstein, Sh.’ke A. Goldstein, D