WorldWideScience

Sample records for plasma cvd process

  1. Low-temperature graphene synthesis using microwave plasma CVD

    International Nuclear Information System (INIS)

    Yamada, Takatoshi; Kim, Jaeho; Ishihara, Masatou; Hasegawa, Masataka

    2013-01-01

    The graphene chemical vapour deposition (CVD) technique at substrate temperatures around 300 °C by a microwave plasma sustained by surface waves (surface wave plasma chemical vapour deposition, SWP-CVD) is discussed. A low-temperature, large-area and high-deposition-rate CVD process for graphene films was developed. It was found from Raman spectra that the deposited films on copper (Cu) substrates consisted of high-quality graphene flakes. The fabricated graphene transparent conductive electrode showed uniform optical transmittance and sheet resistance, which suggests the possibility of graphene for practical electrical and optoelectronic applications. It is intriguing that graphene was successfully deposited on aluminium (Al) substrates, for which we did not expect the catalytic effect to decompose hydrocarbon and hydrogen molecules. We developed a roll-to-roll SWP-CVD system for continuous graphene film deposition towards industrial mass production. A pair of winder and unwinder systems of Cu film was installed in the plasma CVD apparatus. Uniform Raman spectra were confirmed over the whole width of 297 mm of Cu films. We successfully transferred the deposited graphene onto PET films, and confirmed a transmittance of about 95% and a sheet resistance of less than 7 × 10 5 Ω/sq.

  2. Low-temperature graphene synthesis using microwave plasma CVD

    Science.gov (United States)

    Yamada, Takatoshi; Kim, Jaeho; Ishihara, Masatou; Hasegawa, Masataka

    2013-02-01

    The graphene chemical vapour deposition (CVD) technique at substrate temperatures around 300 °C by a microwave plasma sustained by surface waves (surface wave plasma chemical vapour deposition, SWP-CVD) is discussed. A low-temperature, large-area and high-deposition-rate CVD process for graphene films was developed. It was found from Raman spectra that the deposited films on copper (Cu) substrates consisted of high-quality graphene flakes. The fabricated graphene transparent conductive electrode showed uniform optical transmittance and sheet resistance, which suggests the possibility of graphene for practical electrical and optoelectronic applications. It is intriguing that graphene was successfully deposited on aluminium (Al) substrates, for which we did not expect the catalytic effect to decompose hydrocarbon and hydrogen molecules. We developed a roll-to-roll SWP-CVD system for continuous graphene film deposition towards industrial mass production. A pair of winder and unwinder systems of Cu film was installed in the plasma CVD apparatus. Uniform Raman spectra were confirmed over the whole width of 297 mm of Cu films. We successfully transferred the deposited graphene onto PET films, and confirmed a transmittance of about 95% and a sheet resistance of less than 7 × 105 Ω/sq.

  3. Graphene Synthesis by Plasma-Enhanced CVD Growth with Ethanol

    OpenAIRE

    Campo, T.; Cotto, M.; Márquez, F.; Elizalde, E.; Morant, C.

    2016-01-01

    A modified route to synthesize graphene flakes is proposed using the Chemical Vapor Deposition (CVD) technique, by using copper substrates as supports. The carbon source used was ethanol, the synthesis temperature was 950°C and the pressure was controlled along the whole process. In this CVD synthesis process the incorporation of the carbon source was produced at low pressure and 950°C inducing the appearance of a plasma blue flash inside the quartz tube. Apparently, the presence of this plas...

  4. Hard coatings by plasma CVD on polycarbonate for automotive and optical applications

    International Nuclear Information System (INIS)

    Schmauder, T.; Nauenburg, K.-D.; Kruse, K.; Ickes, G.

    2006-01-01

    In many applications, plastic surfaces need coatings as a protection against abrasion or weathering. Leybold Optics is developing Plasma CVD processes and machinery for transparent hard coatings (THC) for polycarbonate parts. In this paper we present the current features and remaining challenges of this technique. The coatings generally show excellent adhesion. Abrasion resistance is superior to commonly used lacquers. Climate durability of the coating has been improved to pass the tests demanded by automotive specifications. Current activities are focused on improving the durability under exposure to UV radiation. Estimations show that our high-rate plasma CVD hard coating process is also economically competitive to lacquering

  5. Diameter Tuning of Single-Walled Carbon Nanotubes by Diffusion Plasma CVD

    Directory of Open Access Journals (Sweden)

    Toshiaki Kato

    2011-01-01

    Full Text Available We have realized a diameter tuning of single-walled carbon nanotubes (SWNTs by adjusting process gas pressures with plasma chemical vapor deposition (CVD. Detailed photoluminescence measurements reveal that the diameter distribution of SWNTs clearly shifts to a large-diameter region with an increase in the pressure during plasma CVD, which is also confirmed by Raman scattering spectroscopy. Based on the systematical investigation, it is found that the main diameter of SWNTs is determined by the pressure during the heating in an atmosphere of hydrogen and the diameter distribution is narrowed by adjusting the pressure during the plasma generation. Our results could contribute to an application of SWNTs to high-performance thin-film transistors, which requires the diameter-controlled semiconductor-rich SWNTs.

  6. Plasma CVD reactor with two-microwave oscillators for diamond film synthesis

    International Nuclear Information System (INIS)

    Nagatsu, M.; Miyake, M.; Maeda, J.

    2006-01-01

    In this study, we present the experimental results of a new type of microwave plasma CVD system, where two of 1.5 kW microwave sources were used for enlarging the plasma discharge and the diamond film growth. One of the microwave oscillators was used to produce the microwave plasma as in the conventional microwave plasma CVD device, while the second one was used to enlarge the plasma by introducing microwave from the launcher mounted at the substrate stage. We demonstrated the enlargement of plasma discharge area from 60 mm to 100 mm in diameter by using the two-microwave oscillators system. Characteristics of diamond films deposited using H 2 /CH 4 plasmas were also investigated using a scanning electron microscope (SEM) and Raman spectroscopy

  7. FY1995 development of a clean CVD process by evaluation and control of gas phase nucleation phenomena; 1995 nendo kisokaku seisei gensho no hyoka to seigyo ni yoru clean CVD process no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The purpose of this study is to develop a high-rate and clean chemical vapor deposition (CVD) process as a breakthrough technique to overcome the problems that particles generated in the gas phase during CVD process for preparation of functional thin films cause reduced product yield and deterioration of the films. In the CVD process proposed here, reactant gas and generated particles are electrically charged to control the motion of them with an electric field. In this study, gas-phase nucleation phenomena are evaluated both theoretically and experimentally. A high-rate, ionized CVD method is first developed, in which reactant gas and generated particles are charged with negative ions generated from a radioisotope source and the UV/photoelectron method, and the motion of the charged gas and particles is controlled with an electric field. Charging and transport processes of fine particles are then investigated experimentally and theoretically to develop a clean CVD method in which generated particles are removed with the electric forces. As a result, quantitative evaluation of the charging and transport process was made possible. We also developed devices for measuring the size distribution and concentration of fine particles in low pressure gas such as those found in plasma CVD processes. In addition, numerical simulation and experiments in this study for a TEOS/O{sub 3} CVD process to prepare thin films could determine reaction rates which have not been known so far and give information on selecting good operation conditions for the process. (NEDO)

  8. Growth of carbon allotropes and plasma characterization in linear antenna microwave plasma CVD system

    Czech Academy of Sciences Publication Activity Database

    Potocký, Štěpán; Babchenko, Oleg; Davydova, Marina; Ižák, Tibor; Čada, Martin; Kromka, Alexander

    2014-01-01

    Roč. 53, č. 5 (2014), "05FP04-1"-"05FP04-3" ISSN 0021-4922 R&D Projects: GA TA ČR TA01011740; GA ČR GAP205/12/0908 Grant - others:AVČR(CZ) M100100902 Institutional support: RVO:68378271 Keywords : antenna linear * CVD system * plasma Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.127, year: 2014

  9. Synergy between plasma-assisted ALD and roll-to-roll atmospheric pressure PE-CVD processing of moisture barrier films on polymers

    NARCIS (Netherlands)

    Starostin, S.A.; Keuning, W.; Schalken, J.R.G.; Creatore, M.; Kessels, W.M.M.; Bouwstra, J.B.; Sanden, van de M.C.M.; Vries, de H.W.

    2016-01-01

    The synergy between fast (1600 nm · min−1), roll-to-roll plasma-enhanced chemical vapor deposited (PE-CVD) SiO2 layers and plasma-assisted atomic layer deposited (PA-ALD) ultra-thin Al2O3 films has been investigated in terms of moisture permeation barrier properties. The effective and intrinsic

  10. Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers

    NARCIS (Netherlands)

    Starostin, S. A.; Keuning, W.; Schalken, J.; Creatore, M.; Kessels, W. M. M.; Bouwstra, J. B.; van de Sanden, M. C. M.; de Vries, H. W.

    2016-01-01

    The synergy between fast (1600 nm · min−1), roll-to-roll plasma-enhanced chemical vapor deposited (PE-CVD) SiO2 layers and plasma-assisted atomic layer deposited (PA-ALD) ultra-thin Al2O3 films has been investigated in terms of moisture permeation barrier properties. The effective and intrinsic

  11. Study of the triton-burnup process in different JET scenarios using neutron monitor based on CVD diamond

    Energy Technology Data Exchange (ETDEWEB)

    Nemtsev, G., E-mail: g.nemtsev@iterrf.ru; Amosov, V.; Meshchaninov, S.; Rodionov, R. [Institution “Project center ITER,” Moscow (Russian Federation); Popovichev, S. [CCFE, Culham Science Centre, Abingdon OX14 3DB (United Kingdom); Collaboration: EUROfusion Consortium, JET, Culham Science Centre, Abingdon OX14 3DB (United Kingdom)

    2016-11-15

    We present the results of analysis of triton burn-up process using the data from diamond detector. Neutron monitor based on CVD diamond was installed in JET torus hall close to the plasma center. We measure the part of 14 MeV neutrons in scenarios where plasma current varies in a range of 1-3 MA. In this experiment diamond neutron monitor was also able to detect strong gamma bursts produced by runaway electrons arising during the disruptions. We can conclude that CVD diamond detector will contribute to the study of fast particles confinement and help predict the disruption events in future tokamaks.

  12. Nucleation of microwave plasma CVD diamond on molybdenum (Mo) substrate

    International Nuclear Information System (INIS)

    Inderjeet, K.; Ramesh, S.

    2000-01-01

    Molybdenum is a metal, which is gaining increasing significance in industrial applications. The main use of Mo is as all alloying element added in small amounts to steel, irons and non- ferrous alloys in order to enhance the strength, toughness and wear resistance. Mo is also vastly being employed in the automotive and aircraft industries, mainly due to its low coefficient of friction. Diamond, on be other hand, is a unique material for innumerable applications because of its usual combination of physical and chemical properties. Several potential applications can be anticipated for diamond in many sectors including electronics, optics, as protective corrosion resistant coatings, cutting tools, etc. With the enhancement in science and technology, diamond microcrystals and thin films are now being produced from the vapour phase by a variety of chemical vapour deposition (CVD) techniques; such as microwave plasma CVD. With such technology being made available, it is envisage that diamond-coated molybdenum would further enhance the performance and to open up new avenue for Mo in various industries. Therefore, it is the aim of the present work to study the nucleation and growth of diamond particles on Mo surface by employing microwave plasma CVD (MAPCVD). In the present work, diamond deposition was carried out in several stages by varying the deposition distance. The nucleation and growth rate were studied using scanning electron microscopy (SEM). In addition, the existence of diamond was verified by X-ray diffraction (XRD) analysis. It has been found that the nucleation and growth rate of diamond particles were influenced by the deposition height between the substrate and plasma. Under the optimum condition, well defined diamond crystallites distributed homogeneously throughout the surface, could be obtained. Some of the important parameters controlling the deposition and growth of diamond particles on Mo surface are discussed. (author)

  13. Mechanics-driven patterning of CVD graphene for roll-based manufacturing process

    Science.gov (United States)

    Kim, Sang-Min; Jang, Bongkyun; Jo, Kyungmin; Kim, Donghyuk; Lee, Jihye; Kim, Kyung-Shik; Lee, Seung-Mo; Lee, Hak-Joo; Han, Seung Min; Kim, Jae-Hyun

    2017-06-01

    Graphene is considered as a promising material for flexible and transparent electrodes due to its outstanding electrical, optical, and mechanical properties. Efforts to mass-produce graphene electrodes led to the development of roll-to-roll chemical vapor deposition (CVD) graphene growth and transfer, and the only remaining obstacle to the mass-production of CVD graphene electrodes is a cost-effective patterning technique that is compatible with the roll-to-roll manufacturing. Herein, we propose a mechanics-driven technique for patterning graphene synthesized on copper foil (commonly used in roll-to-roll manufacturing). The copper foil is exposed to high temperature for a prolonged period during the CVD growth of graphene, and thus can result in recrystallization and grain growth of the copper foil and thereby reducing to the yield strength. This softening behavior of the copper was carefully controlled to allow simple stamp patterning of the graphene. The strength of the underlying substrate was controlled for the accuracy of the residual patterns. The proposed stamp patterning technique is mask-less and photoresist-free, and can be performed at room temperature without high-energy sources such as lasers or plasma. To demonstrate the capability of this process to produce a continuous electrode, a transparent in-plane supercapacitor was fabricated using the proposed patterning technique.

  14. Development of CVD Diamond for Industrial Applications Final Report CRADA No. TC-2047-02

    Energy Technology Data Exchange (ETDEWEB)

    Caplan, M. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Olstad, R. [General Atomics, San Diego, CA (United States); Jory, H. [Communications and Power Industries, Palo Alto, CA (United States); Vikharov, A. L. [Russian Academy of Sciences (RAS), Moscow (Russian Federation)

    2017-09-08

    This project was a collaborative effort to develop and demonstrate a new millimeter microwave assisted chemical vapor deposition(CVD) process for manufacturing large diamond disks with greatly reduced processing times and costs from those now available. In the CVD process, carbon based gases (methane) and hydrogen are dissociated into plasma using microwave discharge and then deposited layer by layer as polycrystalline diamond onto a substrate. The available low frequency (2.45GHz) microwave sources used elsewhere (De Beers) result in low density plasmas and low deposition rates: 4 inch diamond disks take 6-8 weeks to process. The new system developed in this project uses a high frequency 30GHz Gyrotron as the microwave source and a quasi-optical CVD chamber resulting in a much higher density plasma which greatly reduced the diamond processing times (1-2 weeks)

  15. Crystalline silicon thin film growth by ECR plasma CVD for solar cells

    International Nuclear Information System (INIS)

    Licai Wang

    1999-07-01

    This thesis describes the background, motivation and work carried out towards this PhD programme entitled 'Crystalline Silicon Thin Film Growth by ECR Plasma CVD for Solar Cells'. The fundamental principles of silicon solar cells are introduced with a review of silicon thin film and bulk solar cells. The development and prospects for thin film silicon solar cells are described. Some results of a modelling study on thin film single crystalline solar cells are given which has been carried out using a commercially available solar cell simulation package (PC-1D). This is followed by a description of thin film deposition techniques. These include Chemical Vapour Deposition (CVD) and Plasma-Assisted CVD (PACVD). The basic theory and technology of the emerging technique of Electron Cyclotron Resonance (ECR) PACVD, which was used in this research, are introduced and the potential advantages summarised. Some of the basic methods of material and cell characterisation are briefly described, together with the work carried out in this research. The growth by ECR PACVD at temperatures 2 illumination. The best efficiency in the ECR grown structures was 13.76% using an epitaxial emitter. Cell performance was analysed in detail and the factors controlling performance identified by fitting self-consistently the fight and dark current-voltage and spectral response data using PC-1D. Finally, the conclusions for this research and suggestions for further work are outlined. (author)

  16. The study on diamond-coated insert by DC plasma jet CVD

    International Nuclear Information System (INIS)

    Zhou Kesong; Dai Mingjiang; Song Jinbing; Kuang Tongchun; Liu Zhengyi

    2001-01-01

    Diamond coating were deposited on cemented carbide inserts by DC plasma jet CVD. The cemented carbide inserts were pretreated by methods including chemical etching of Co, Ar/H 2 plasma etching. The characteristics of diamond film, interface structure, adhesion strength and film stress were analysized by different methods such as SEM, XRD, Raman spectrum etc. A comparing experiment of cutting Al - 22 % Si alloy was carried out with diamond-coated cemented carbide inserts and uncoated cemented carbide inserts. The results show that the diamond-coated cemented carbide insert has a great advantage for cutting abrasive high content Al - Si alloy. (author)

  17. Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating

    International Nuclear Information System (INIS)

    Sugawara, Katsutoshi; Sakuraba, Masao; Murota, Junichi

    2010-01-01

    Using an 84% relaxed Ge(100) buffer layer formed on Si(100) by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD), influence of strain upon electrical characteristics of B-doped Si film epitaxially grown on the Ge buffer have been investigated. For the thinner B-doped Si film, surface strain amount is larger than that of the thicker film, for example, strain amount reaches 2.0% for the thickness of 2.2 nm. It is found that the hole mobility is enhanced by the introduction of strain to Si, and the maximum enhancement of about 3 is obtained. This value is higher than that of the usually reported mobility enhancement by strain using Si 1 -x Ge x buffer. Therefore, introduction of strain using relaxed Ge film formed by ECR plasma enhanced CVD is useful to improve future Si-based device performance.

  18. Optical characterization of single-crystal diamond grown by DC arc plasma jet CVD

    Science.gov (United States)

    Hei, Li-fu; Zhao, Yun; Wei, Jun-jun; Liu, Jin-long; Li, Cheng-ming; Lü, Fan-xiu

    2017-12-01

    Optical centers of single-crystal diamond grown by DC arc plasma jet chemical vapor deposition (CVD) were examined using a low-temperature photoluminescence (PL) technique. The results show that most of the nitrogen-vacancy (NV) complexes are present as NV- centers, although some H2 and H3 centers and B-aggregates are also present in the single-crystal diamond because of nitrogen aggregation resulting from high N2 incorporation and the high mobility of vacancies under growth temperatures of 950-1000°C. Furthermore, emissions of radiation-induced defects were also detected at 389, 467.5, 550, and 588.6 nm in the PL spectra. The reason for the formation of these radiation-induced defects is not clear. Although a Ni-based alloy was used during the diamond growth, Ni-related emissions were not detected in the PL spectra. In addition, the silicon-vacancy (Si-V)-related emission line at 737 nm, which has been observed in the spectra of many previously reported microwave plasma chemical vapor deposition (MPCVD) synthetic diamonds, was absent in the PL spectra of the single-crystal diamond prepared in this work. The high density of NV- centers, along with the absence of Ni-related defects and Si-V centers, makes the single-crystal diamond grown by DC arc plasma jet CVD a promising material for applications in quantum computing.

  19. A study of the performance and properties of diamond like carbon (DLC) coatings deposited by plasma chemical vapor deposition (CVD) for two stroke engine components

    Energy Technology Data Exchange (ETDEWEB)

    Tither, D. [BEP Grinding Ltd., Manchester (United Kingdom); Ahmed, W.; Sarwar, M.; Penlington, R. [Univ. of Northumbria, Newcastle-upon-Tyne (United Kingdom)

    1995-12-31

    Chemical vapor deposition (CVD) using microwave and RF plasma is arguably the most successful technique for depositing diamond and diamond like carbon (DLC) films for various engineering applications. However, the difficulties of depositing diamond are nearly as extreme as it`s unique combination of physical, chemical and electrical properties. In this paper, the modified low temperature plasma enhanced CVD system is described. The main focus of this paper will be work related to deposition of DLC on metal matrix composite materials (MMCs) for application in two-stroke engine components and results will be presented from SEM, mechanical testing and composition analysis studies. The authors have demonstrated the feasibility of depositing DLC on MMCs for the first time using a vacuum deposition process.

  20. An optical emission spectroscopy study of the plasma generated in the DC HF CVD nucleation of diamond

    Energy Technology Data Exchange (ETDEWEB)

    Larijani, M.M. [Nuclear Research Centre for Agriculture and Medicine, AEOI, P.O. Box 31485-498, Karaj (Iran, Islamic Republic of)]. E-mail: mmojtahedzadeh@nrcam.org; Le Normand, F. [Groupe Surfaces-Interfaces, IPCMS, UMR 7504 CNRS, BP 20, 67037 Strasbourg Cedex 2 (France); Cregut, O. [Groupe Surfaces-Interfaces, IPCMS, UMR 7504 CNRS, BP 20, 67037 Strasbourg Cedex 2 (France)

    2007-02-15

    Optical emission spectroscopy (OES) was used to study the plasma generated by the activation of the gas phase CH{sub 4} + H{sub 2} both by hot filaments and by a plasma discharge (DC HF CVD) during the nucleation of CVD diamond. The effects of nucleation parameters, such as methane concentration and extraction potential, on the plasma chemistry near the surface were investigated. The density of the diamond nucleation and the quality of the diamond films were studied by scanning electron microscopy (SEM) and Raman scattering, respectively. The OES results showed that the methane concentration influenced strongly the intensity ratio of H{sub {beta}}-H{sub {alpha}} implying an increase of electron mean energy, as well as CH, CH{sup +}, C{sub 2}. A correlation between the relative increase of CH{sup +} and the diamond nucleation density was found, conversely the increase of C{sub 2} contributed to the introduction of defects in the diamond nuclei.

  1. Industrial science and technology research and development project of university cooperative type in fiscal 2000. Report on achievements in semiconductor device manufacturing processes using Cat-CVD method (Semiconductor device manufacturing processes using Cat-CVD method); 2000 nendo daigaku renkeigata sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (Cat-CVD ho ni yoru handotai device seizo process)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The catalytic chemical vapor deposition (Cat-CVD) method is a low-temperature thin film depositing technology that can achieve improvement in quality of semiconductor thin films and can perform inexpensive film deposition in a large area. The present project is composed of the basic research and development theme and the demonstrative research and development theme for the Cat-CVD method. This report summarizes the achievements in fiscal 2000 centering on the former theme. Discussions were given on the following five areas: 1) simulation on film thickness distribution in the Cat-CVD method, 2) life extension by preventing the catalyst converting into silicide and development of a catalyst integrated shear head, 3) vapor diagnosis in the film forming process by the Cat-CVD method using silane, hydrogen and ammonia, 4) a technology for high-speed deposition of hydrogenated amorphous silicon films for solar cells using the Cat-CVD method, and the low-temperature silicon oxide nitriding technology using heated catalysts, and 5) discussions on compatibility of transparent oxide electrode materials to the process of manufacturing thin-film silicon-based solar cells by using the Cat-CVD method. (NEDO)

  2. Deposition and micro electrical discharge machining of CVD-diamond layers incorporated with silicon

    Science.gov (United States)

    Kühn, R.; Berger, T.; Prieske, M.; Börner, R.; Hackert-Oschätzchen, M.; Zeidler, H.; Schubert, A.

    2017-10-01

    In metal forming, lubricants have to be used to prevent corrosion or to reduce friction and tool wear. From an economical and ecological point of view, the aim is to avoid the usage of lubricants. For dry deep drawing of aluminum sheets it is intended to apply locally micro-structured wear-resistant carbon based coatings onto steel tools. One type of these coatings are diamond layers prepared by chemical vapor deposition (CVD). Due to the high strength of diamond, milling processes are unsuitable for micro-structuring of these layers. In contrast to this, micro electrical discharge machining (micro EDM) is a suitable process for micro-structuring CVD-diamond layers. Due to its non-contact nature and its process principle of ablating material by melting and evaporating, it is independent of the hardness, brittleness or toughness of the workpiece material. In this study the deposition and micro electrical discharge machining of silicon incorporated CVD-diamond (Si-CVD-diamond) layers were presented. For this, 10 µm thick layers were deposited on molybdenum plates by a laser-induced plasma CVD process (LaPlas-CVD). For the characterization of the coatings RAMAN- and EDX-analyses were conducted. Experiments in EDM were carried out with a tungsten carbide tool electrode with a diameter of 90 µm to investigate the micro-structuring of Si-CVD-diamond. The impact of voltage, discharge energy and tool polarity on process speed and resulting erosion geometry were analyzed. The results show that micro EDM is a suitable technology for micro-structuring of silicon incorporated CVD-diamond layers.

  3. Initial damage processes for diamond film exposure to hydrogen plasma

    International Nuclear Information System (INIS)

    Deslandes, A.; Guenette, M.C.; Samuell, C.M.; Karatchevtseva, I.; Ionescu, M.; Cohen, D.D.; Blackwell, B.; Corr, C.; Riley, D.P.

    2013-01-01

    Graphical abstract: -- Highlights: • Exposing chemical vapour deposited (CVD) diamond films in a recently constructed device, MAGPIE, specially commissioned to simulate fusion plasma conditions. • Non-diamond material is etched from the diamond. • There is no hydrogen retention observed, which suggests diamond is an excellent candidate for plasma facing materials. • Final structure of the surface is dependent on synergistic effects of etching and ion-induced structural change. -- Abstract: Diamond is considered to be a possible alternative to other carbon based materials as a plasma facing material in nuclear fusion devices due to its high thermal conductivity and resistance to chemical erosion. In this work CVD diamond films were exposed to hydrogen plasma in the MAGnetized Plasma Interaction Experiment (MAGPIE): a linear plasma device at the Australian National University which simulates plasma conditions relevant to nuclear fusion. Various negative sample stage biases of magnitude less than 500 V were applied to control the energies of impinging ions. Characterisation results from SEM, Raman spectroscopy and ERDA are presented. No measureable quantity of hydrogen retention was observed, this is either due to no incorporation of hydrogen into the diamond structure or due to initial incorporation as a hydrocarbon followed by subsequent etching back into the plasma. A model is presented for the initial stages of diamond erosion in fusion relevant hydrogen plasma that involves chemical erosion of non-diamond material from the surface by hydrogen radicals and damage to the subsurface region from energetic hydrogen ions. These results show that the initial damage processes in this plasma regime are comparable to previous studies of the fundamental processes as reported for less extreme plasma such as in the development of diamond films

  4. New materials for advanced lithium battery. Especially on plasma-assisted CVD of TiS sub 2

    Energy Technology Data Exchange (ETDEWEB)

    Kikkawa, Shin' ichi [Osaka Univ. (Japan)

    1989-03-15

    Intercalation can be applied to cathode reaction of rechargeable battery. Three kinds of candidate materials, TiS{sub 2}, NbS{sub 3} and alkali transition metal dioxides such as LiCoO{sub 2} were studied as the battery cathode. TiS{sub 2} is closest to a practical usage. Lithium ion has to diffuse in the TiS{sub 2} crystal lattice during the intercalation. Large surface area is necessary to obtain high current density. Preferred orientation of the crystallite is also required in its film formation to further enhance its current density. CVD reactor was used to obtain TiS{sub 2} fine powder and its thin film. Black fine power was obtained on a thin film deposited on a glass substrate. The powder was obtained in high yield under a pressure of 120 Pa at the electrode center where the plasma density was high. In conclusion, TiS{sub 2} fine power with submicron diameter and also highly preferred oriented TiS{sub 2} thin film were obtained using plasma-CVD. 21 refs., 8 figs.

  5. Modelling and analysis of CVD processes for ceramic membrane preparation

    NARCIS (Netherlands)

    Brinkman, H.W.; Cao, G.Z.; Meijerink, J.; de Vries, Karel Jan; Burggraaf, Anthonie

    1993-01-01

    A mathematical model is presented that describes the modified chemical vapour deposition (CVD) process (which takes place in advance of the electrochemical vapour deposition (EVD) process) to deposit ZrO2 inside porous media for the preparation and modification of ceramic membranes. The isobaric

  6. Non-classical crystallization of thin films and nanostructures in CVD and PVD processes

    CERN Document Server

    Hwang, Nong Moon

    2016-01-01

    This book provides a comprehensive introduction to a recently-developed approach to the growth mechanism of thin films and nanostructures via chemical vapour deposition (CVD). Starting from the underlying principles of the low pressure synthesis of diamond films, it is shown that diamond growth occurs not by individual atoms but by charged nanoparticles. This newly-discovered growth mechanism turns out to be general to many CVD and some physical vapor deposition (PVD) processes. This non-classical crystallization is a new paradigm of crystal growth, with active research taking place on growth in solution, especially in biomineralization processes. Established understanding of the growth of thin films and nanostructures is based around processes involving individual atoms or molecules. According to the author’s research over the last two decades, however, the generation of charged gas phase nuclei is shown to be the rule rather than the exception in the CVD process, and charged gas phase nuclei are actively ...

  7. Comparative evaluation of CVD diamond technologies

    Energy Technology Data Exchange (ETDEWEB)

    Anthony, T.R. [General Electric Corporate Research & Development Center, Schenectady, NY (United States)

    1993-01-01

    Chemical vapor deposition (CVD) of diamonds occurs from hydrogen-hydrocarbon gas mixtures in the presence of atomic hydrogen at subatmospheric pressures. Most CVD methods are based on different means of generating and transporting atomic hydrogen in a particular system. Evaluation of these different techniques involves their capital costs, material costs, energy costs, labor costs and the type and quality of diamond that they produce. Currently, there is no universal agreement on which is the best technique and technique selection has been largely driven by the professional background of the user as well as the particular application of interest. This article discusses the criteria for evaluating a process for low-pressure deposition of diamond. Next, a brief history of low-pressure diamond synthesis is reviewed. Several specific processes are addressed, including the hot filament process, hot filament electron-assisted chemical vapor deposition, and plasma generation of atomic hydrogen by glow discharge, microwave discharge, low pressure radio frequency discharge, high pressure DC discharge, high pressure microwave discharge jets, high pressure RF discharge, and high and low pressure flames. Other types of diamond deposition methods are also evaluated. 101 refs., 15 figs.

  8. CVD - main concepts, applications and restrictions

    International Nuclear Information System (INIS)

    Bliznakovska, B.; Milosevski, M.; Krawczynski, S.; Meixner, C.; Koetter, H.R.

    1993-01-01

    Despite of the fact that the existing literature covering the last two decades is plentiful with data related to CVD, this document is an attempt to provide to a reader a concise information about the nature of CVD technique at production of technologically important materials as well as to point at special references. The text is devided into three separate sections. The first section, The Main Features of CVD, is intended to give a complete comprehensive picture of the CVD technique through process description and characterization. The basic principles of thermodynamics, CVD chemical reactions classification, CVD chemical kinetics aspects and physics of CVD (with particular attention on the gas-flow phenomena) are included. As an additional aspect, in CVD unavoidable aspect however, the role of the coating/substrate compatibility on the overall process was outlined. The second section, CVD Equipment, concerns on the pecularities of the complete CVD unit pointing out the individual significances of the separate parts, i.e. pumping system, reactor chamber, control system. The aim of this section is to create to a reader a basic understanding of the arising problems but connected to be actual CVD performance. As a final goal of this review the reader's attention is turned upon the CVD applications for production of an up-to-date important class of coatings such as multilayer coatings. (orig.)

  9. Surface modification on 304 SS by plasma-immersed ion implantation to improve the adherence of a CVD diamond film

    Energy Technology Data Exchange (ETDEWEB)

    Nono, M.C.A.; Corat, E.J. (Instituto Nacional de Pesquisas Espaciais, Sao Jose dos Campos, SP (Brazil)); Ueda, M.; Stellati, C.; Barroso, J.J.; Conrad, J.R.; Shamim, M.; Fetherston, P.; Sridharan, K.

    1999-02-01

    The weak adherence of chemical vapor deposited (CVD) diamond films on steel substrates is an important factor that limits the technological applications of these materials. We are interested in enhancing the film-to-substrate adherence by using substrate surfaces with a previous modification by plasma-immersed ion implantation (PIII). In this work we present and discuss the preliminary results on phase formation, microstructure and adherence evaluations. CVD diamond films were deposited on 304 SS, the surface of which was modified by implanted carbon ions. The samples were first submitted to implantation with 30 keV carbon ions at different doses. Later, these surfaces were examined by Auger spectroscopy (SAM), scanning electron microscopy (SEM) and X-ray diffraction. We observed a metastable carbide phase formed from carbon and iron, which is considered to be a good polycrystalline material for the nucleation of CVD diamond crystals. The CVD diamond nucleation and film growth were observed by SEM and Raman spectroscopy. These results are discussed with the emphasis on the carbon diffusion barrier on the substrate surfaces. The preliminary results of diamond growth were encouraging. (orig.) 7 refs.

  10. FABRICATION OF CNTS BY TOLUENE DECOMPOSITION IN A NEW REACTOR BASED ON AN ATMOSPHERIC PRESSURE PLASMA JET COUPLED TO A CVD SYSTEM

    Directory of Open Access Journals (Sweden)

    FELIPE RAMÍREZ-HERNÁNDEZ

    2017-03-01

    Full Text Available Here, we present a method to produce carbon nanotubes (CNTs based on the coupling between two conventional techniques used for the preparation of nanostructures: an arc-jet as a source of plasma and a chemical vapour deposition (CVD system. We call this system as an “atmospheric pressure plasma (APP-enhanced CVD” (APPE-CVD. This reactor was used to grow CNTs on non-flat aluminosilicate substrates by the decomposition of toluene (carbon source in the presence of ferrocene (as a catalyst. Both, CNTs and by-products of carbon were collected at three different temperatures (780, 820 and 860 °C in different regions of the APPE-CVD system. These samples were analysed by thermogravimetric analysis (TGA and DTG, scanning electron microscopy (SEM and Raman spectroscopy in order to determine the effect of APP on the thermal stability of the as-grown CNTs. It was found that the amount of metal catalyst in the synthesised CNTs is reduced by applying APP, being 820 °C the optimal temperature to produce CNTs with a high yield and carbon purity (95 wt. %. In contrast, when the synthesis temperature was fixed at 780 °C or 860 °C, amorphous carbon or CNTs with different structural defects, respectively, was formed through APEE-CVD reactor. We recommended the use of non-flat aluminosilicate particles as supports to increase CNT yield and facilitate the removal of deposits from the substrate surface. The approach that we implemented (to synthesise CNTs by using the APPE-CVD reactor may be useful to produce these nanostructures on a gram-scale for use in basic studies. The approach may also be scaled up for mass production.

  11. Forming method of a functional layer-built film by micro-wave plasma CVD

    Energy Technology Data Exchange (ETDEWEB)

    Saito, Keishi

    1988-11-18

    In forming an amorphous semi-conductor material film, the micro-wave plasma CVD cannot be generally used because of such demerits as film-separation, low yield, columnar structure in the film, and problems in the optical and electrical properties. In this invention, a specific substrate is placed in a layer-built film forming unit which is capable of maintaining vacuum; raw material gas for the film formation is introduced; plasma is generated by a micro-wave energy to decompose the raw material gas, thus forming the layer-built film on the substarte. Then a film is made by adding a specific amount of calcoganide-containing gas to the raw material gas. By this, the utilization efficiency of the raw material gas gets roughly 100% and both the adhesion to the substrate and the structural flexibility of the layer-built film increase, enhancing the yield of forming various functional elements (sensor, solar cell, thin transistor film, etc.), and thus greatly reducing the production cost. 6 figs., 7 tabs.

  12. Superhydrophobic Copper Surfaces with Anticorrosion Properties Fabricated by Solventless CVD Methods.

    Science.gov (United States)

    Vilaró, Ignasi; Yagüe, Jose L; Borrós, Salvador

    2017-01-11

    Due to continuous miniaturization and increasing number of electrical components in electronics, copper interconnections have become critical for the design of 3D integrated circuits. However, corrosion attack on the copper metal can affect the electronic performance of the material. Superhydrophobic coatings are a commonly used strategy to prevent this undesired effect. In this work, a solventless two-steps process was developed to fabricate superhydrophobic copper surfaces using chemical vapor deposition (CVD) methods. The superhydrophobic state was achieved through the design of a hierarchical structure, combining micro-/nanoscale domains. In the first step, O 2 - and Ar-plasma etchings were performed on the copper substrate to generate microroughness. Afterward, a conformal copolymer, 1H,1H,2H,2H-perfluorodecyl acrylate-ethylene glycol diacrylate [p(PFDA-co-EGDA)], was deposited on top of the metal via initiated CVD (iCVD) to lower the surface energy of the surface. The copolymer topography exhibited a very characteristic and unique nanoworm-like structure. The combination of the nanofeatures of the polymer with the microroughness of the copper led to achievement of the superhydrophobic state. AFM, SEM, and XPS were used to characterize the evolution in topography and chemical composition during the CVD processes. The modified copper showed water contact angles as high as 163° and hysteresis as low as 1°. The coating withstood exposure to aggressive media for extended periods of time. Tafel analysis was used to compare the corrosion rates between bare and modified copper. Results indicated that iCVD-coated copper corrodes 3 orders of magnitude slower than untreated copper. The surface modification process yielded repeatable and robust superhydrophobic coatings with remarkable anticorrosion properties.

  13. Lipids, atherosclerosis and CVD risk: is CRP an innocent bystander?

    DEFF Research Database (Denmark)

    Nordestgaard, B G; Zacho, J

    2009-01-01

    AIM: To evaluate recent human studies with respect to the interpretation of whether elevated plasma levels of C-reactive protein (CRP) cause cardiovascular disease (CVD), or whether elevated CRP levels more likely is an innocent bystander. DATA SYNTHESIS: Elevated CRP concentrations...... and vulnerability of atherosclerotic plaques, and thus simply an innocent bystander in CVD....

  14. Correlation of CVD Diamond Electron Emission with Film Properties

    Science.gov (United States)

    Bozeman, S. P.; Baumann, P. K.; Ward, B. L.; Nemanich, R. J.; Dreifus, D. L.

    1996-03-01

    Electron field emission from metals is affected by surface morphology and the properties of any dielectric coating. Recent results have demonstrated low field electron emission from p-type diamond, and photoemission measurements have identified surface treatments that result in a negative electron affinity (NEA). In this study, the field emission from diamond is correlated with surface treatment, surface roughness, and film properties (doping and defects). Electron emission measurements are reported on diamond films synthesized by plasma CVD. Ultraviolet photoemission spectroscopy indicates that the CVD films exhibit a NEA after exposure to hydrogen plasma. Field emission current-voltage measurements indicate "threshold voltages" ranging from approximately 20 to 100 V/micron.

  15. Growth and characterization of nanodiamond layers prepared using the plasma-enhanced linear antennas microwave CVD system

    Energy Technology Data Exchange (ETDEWEB)

    Fendrych, Frantisek; Taylor, Andrew; Peksa, Ladislav; Kratochvilova, Irena; Kluiber, Zdenek; Fekete, Ladislav [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i, Na Slovance 2, CZ-18221 Prague 8 (Czech Republic); Vlcek, Jan [Department of Physics and Measurement, Institute of Chemical Technology Prague, Technicka 5, CZ-16628 Prague 6 (Czech Republic); Rezacova, Vladimira; Petrak, Vaclav [Faculty of Biomedical Engineering, Czech Technical University, Sitna 3105, CZ-27201 Kladno 2 (Czech Republic); Liehr, Michael [Leybold Optics Dresden GmbH, Zur Wetterwarte 50, D-01109 Dresden (Germany); Nesladek, Milos, E-mail: fendrych@fzu.c [IMOMEC division, IMEC, Institute for Materials Research, University Hasselt, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)

    2010-09-22

    Industrial applications of plasma-enhanced chemical vapour deposition (CVD) diamond grown on large area substrates, 3D shapes, at low substrate temperatures and on standard engineering substrate materials require novel plasma concepts. Based on the pioneering work of the group at AIST in Japan, the high-density coaxial delivery type of plasmas has been explored (Tsugawa et al 2006 New Diamond Front. Carbon Technol. 16 337-46). However, an important challenge is to obtain commercially interesting growth rates at very low substrate temperatures. In this work we introduce the concept of novel linear antenna sources, designed at Leybold Optics Dresden, using high-frequency pulsed MW discharge with a high plasma density. This type of pulse discharges leads to the preparation of nanocrystalline diamond (NCD) thin films, compared with ultra-NCD thin films prepared in (Tsugawa et al 2006 New Diamond Front. Carbon Technol. 16 337-46). We present optical emission spectroscopy data for the CH{sub 4}-CO{sub 2}-H{sub 2} gas chemistry and we discuss the basic properties of the NCD films grown.

  16. Structural Transformation upon Nitrogen Doping of Ultrananocrystalline Diamond Films by Microwave Plasma CVD

    Directory of Open Access Journals (Sweden)

    Chien-Chung Teng

    2009-01-01

    Full Text Available The molecular properties and surface morphology of undoped and N-doped ultra-nanocrystalline diamond (UNCD films deposited by microwave plasma CVD with addition of nitrogen are investigated with various spectroscopic techniques. The results of spatially resolved Raman scattering, ATR/FT-IR and XPS spectra show more amorphous and sp2/sp3 ratio characteristics in N-doped UNCD films. The surface morphology in AFM scans shows larger nanocrystalline diamond clusters in N-doped UNCD films. Incorporation of nitrogen into UNCD films has promoted an increase of amorphous sp2-bonded carbons in the grain boundaries and the size of nanocrystalline diamond grains that are well correlated to the reported enhancement of conductivity and structural changes of UNCD films.

  17. P-type sp3-bonded BN/n-type Si heterodiode solar cell fabricated by laser-plasma synchronous CVD method

    International Nuclear Information System (INIS)

    Komatsu, Shojiro; Nagata, Takahiro; Chikyo, Toyohiro; Sato, Yuhei; Watanabe, Takayuki; Hirano, Daisuke; Takizawa, Takeo; Nakamura, Katsumitsu; Hashimoto, Takuya; Nakamura, Takuya; Koga, Kazunori; Shiratani, Masaharu; Yamamoto, Atsushi

    2009-01-01

    A heterojunction of p-type sp 3 -bonded boron nitride (BN) and n-type Si fabricated by laser-plasma synchronous chemical vapour deposition (CVD) showed excellent rectifying properties and proved to work as a solar cell with photovoltaic conversion efficiency of 1.76%. The BN film was deposited on an n-type Si (1 0 0) substrate by plasma CVD from B 2 H 6 + NH 3 + Ar while doping of Si into the BN film was induced by the simultaneous irradiation of an intense excimer laser with a pulse power of 490 mJ cm -2 , at a wavelength of 193 nm and at a repetition rate of 20 Hz. The source of dopant Si was supposed to be the Si substrate ablated at the initial stage of the film growth. The laser enhanced the doping (and/or diffusion) of Si into BN as well as the growth of sp 3 -bonded BN simultaneously in this method. P-type conduction of BN films was determined by the hot (thermoelectric) probe method. The BN/Si heterodiode with an essentially transparent p-type BN as a front layer is supposed to efficiently absorb light reaching the active region so as to potentially result in high efficiency.

  18. Linear antenna microwave plasma CVD diamond deposition at the edge of no-growth region of C-H-O ternary diagram

    Czech Academy of Sciences Publication Activity Database

    Potocký, Štěpán; Babchenko, Oleg; Hruška, Karel; Kromka, Alexander

    2012-01-01

    Roč. 249, č. 12 (2012), s. 2612-2615 ISSN 0370-1972 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GAP205/12/0908 Institutional research plan: CEZ:AV0Z10100521 Keywords : C-H-O phase diagram * nanocrystalline diamond * plasma enhanced CVD * Raman spectroscopy * SEM Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.489, year: 2012

  19. Estimation of magnetic relaxation property for CVD processed YBCO-coated conductors

    International Nuclear Information System (INIS)

    Takahashi, Y.; Kiuchi, M.; Otabe, E.S.; Matsushita, T.; Shikimachi, K.; Watanabe, T.; Kashima, N.; Nagaya, S.

    2010-01-01

    Ion Beam Assist Deposition/Chemical Vapor Deposition(IBAD/CVD)-processed YBCO-coated conductors with high critical current density J c at high magnetic fields are expected to be applied to superconducting equipments such as superconducting magnetic energy storage (SMES). For application to superconducting magnet in SMES one of the most important properties for superconductors is the relaxation property of superconducting current. In this paper, the relaxation property is investigated for IBAD/CVD-processed YBCO-coated conductors of the superconducting layer in the range of 0.18-0.90 μm. This property can be quantitatively characterized by the apparent pinning potential, U 0 *. It is found that U 0 * takes a smaller value due to the two-dimensional pinning mechanism at high magnetic fields for conductor with thinner superconducting layer. Although U 0 * decreases with increasing thickness at low magnetic fields at 20 K, it increases at high magnetic fields. The results are theoretically explained by the model of the flux creep and flow based on the dimensionality of flux pinning. Scaling analysis is examined for the dependence of U 0 * on the magnetic field, temperature and the layer thickness.

  20. Influence of tungsten on the carbon nanotubes growth by CVD process

    Energy Technology Data Exchange (ETDEWEB)

    Escobar, Mariano [Instituto de Fisicoquimica de Materiales, Ambiente y Energia, CONICET-UBA, Pabellon II, Ciudad Universitaria (1428) Bs As (Argentina); LP and MC, Dep. De Fisica, FCEyN-UBA, Pabellon 1, Ciudad Universitaria (1428) Bs As (Argentina)], E-mail: mescobar@qi.fcen.uba.ar; Rubiolo, Gerardo H. [LP and MC, Dep. De Fisica, FCEyN-UBA, Pabellon 1, Ciudad Universitaria (1428) Bs As (Argentina); Unidad de Actividad Materiales, CNEA, Av. Gral. Paz 1499, San Martin (1650), Bs As (Argentina); Moreno, M. Sergio [Centro Atomico Bariloche, (8400) S.C. de Bariloche, Rio Negro (Argentina); Goyanes, Silvia [LP and MC, Dep. De Fisica, FCEyN-UBA, Pabellon 1, Ciudad Universitaria (1428) Bs As (Argentina); Candal, Roberto [Instituto de Fisicoquimica de Materiales, Ambiente y Energia, CONICET-UBA, Pabellon II, Ciudad Universitaria (1428) Bs As (Argentina)

    2009-06-24

    The effect of tungsten (W) on the growth of multi-walled carbon nanotubes (MWNTs) using the chemical vapour deposition (CVD) process over a metal Fe-W catalyst incorporated into a silica matrix is reported. A W molar content in Fe/SiO{sub 2} up to 10% was studied. The incorporation of only 2% of W substantially modifies the crystalline phases and the crystalline degree of the catalyst during the MWNTs synthesis. This fact seems to have a strong influence on the type and yield of the carbonaceous species obtained by the CVD of acetylene, at 600 deg. C and 180 Torr, over each catalyst. Tungsten interacts with iron within the matrix, diminishing the catalytic activity of the metal nanoparticles, and both, carbon nanotubes and carbon nanofibers, are obtained when tungsten is present. The results obtained support the hypothesis of a base growth model for carbon nanotubes indicating a strong interaction between silica matrix and Fe/W nanoparticles, independently of the content of W.

  1. Influence of tungsten on the carbon nanotubes growth by CVD process

    International Nuclear Information System (INIS)

    Escobar, Mariano; Rubiolo, Gerardo H.; Moreno, M. Sergio; Goyanes, Silvia; Candal, Roberto

    2009-01-01

    The effect of tungsten (W) on the growth of multi-walled carbon nanotubes (MWNTs) using the chemical vapour deposition (CVD) process over a metal Fe-W catalyst incorporated into a silica matrix is reported. A W molar content in Fe/SiO 2 up to 10% was studied. The incorporation of only 2% of W substantially modifies the crystalline phases and the crystalline degree of the catalyst during the MWNTs synthesis. This fact seems to have a strong influence on the type and yield of the carbonaceous species obtained by the CVD of acetylene, at 600 deg. C and 180 Torr, over each catalyst. Tungsten interacts with iron within the matrix, diminishing the catalytic activity of the metal nanoparticles, and both, carbon nanotubes and carbon nanofibers, are obtained when tungsten is present. The results obtained support the hypothesis of a base growth model for carbon nanotubes indicating a strong interaction between silica matrix and Fe/W nanoparticles, independently of the content of W.

  2. Surface coatings deposited by CVD and PVD

    International Nuclear Information System (INIS)

    Gabriel, H.M.

    1982-01-01

    The demand for wear and corrosion protective coatings is increasing due to economic facts. Deposition processes in gas atmospheres like the CVD and PVD processes attained a tremendous importance especially in the field of the deposition of thin hard refractory and ceramic coatings. CVD and PVD processes are reviewed in detail. Some examples of coating installations are shown and numerous applications are given to demonstrate the present state of the art. (orig.) [de

  3. Fabrication and Characterization of FeNiCr Matrix-TiC Composite for Polishing CVD Diamond Film

    Institute of Scientific and Technical Information of China (English)

    Zhuji Jin; Zewei Yuan; Renke Kang; Boxian Dong

    2009-01-01

    Dynamic friction polishing (DFP) is one of the most promising methods appropriate for polishing CVD diamond film with high efficiency and low cost.By this method CVD diamond film is polished through being simply pressed against a metal disc rotating at a high speed utilizing the thermochemical reaction occurring as a result of dynamic friction between them in the atmosphere.However, the relatively soft materials such as stainless steel, cast iron and nickel alloy widely used for polishing CVD diamond film are easy to wear and adhere to diamond film surface, which may further lead to low efficiency and poor polishing quality.In this paper, FeNiCr matrix-TiC composite used as grinding wheel for polishing CVD diamond film was obtained by combination of mechanical alloying (MA) and spark plasma sintering (SPS).The process of ball milling,composition, density, hardness, high-temperature oxidation resistance and wear resistance of the sintered piece were analyzed.The results show that TiC was introduced in MA-SPS process and had good combination with FeNiCr matrix and even distribution in the matrix.The density of composite can be improved by mechanical alloying.The FeNiCr matrix-TiC composite obtained at 1273 K was found to be superior to at 1173 K sintering in hardness, high-temperature oxidation resistance and wearability.These properties are more favorable than SUS304 for the preparation of high-performance grinding wheel for polishing CVD diamond film.

  4. Adhesion of non-selective CVD tungsten to silicon dioxide

    International Nuclear Information System (INIS)

    Woodruff, D.W.; Wilson, R.H.; Sanchez-Martinez, R.A.

    1986-01-01

    Adhesion of non-selective, CVD tungsten to silicon dioxide is a critical issue in the development of tungsten as a metalization for VLSI circuitry. Without special adhesion promoters, tungsten deposited from WF/sub 6/ and H/sub 2/ has typically failed a standard tape test over all types of silicon oxides and nitrides. The reasons for failure of thin films, and CVD tungsten in particular are explored along with standard techniques for improving adhesion of thin films. Experiments are reported which include a number of sputtered metals as adhesion promoters, as well as chemical and plasma treatment of the oxide surface. Sputtered molybdenum is clearly the superior adhesion promoting layer from these tests. Traditional adhesion layers such as chromium or titanium failed as adhesion layers for CVD tungsten possibly due to chemical reactions between the WF/sub 6/ and Cr or Ti

  5. CVD mechanism of pyrolytic boron nitride

    International Nuclear Information System (INIS)

    Tanji, H.; Monden, K.; Ide, M.

    1987-01-01

    Pyrolytic boron nitride (P-BN) has become a essential material for III-V compound semiconductor manufacturing process. As the demand from electronics industry for larger single crystals increases, the demand for larger and more economical P-BN components is growing rapidly. P-BN is manufactured by low pressure CVD using boron-trihalides and ammonia as the reactants. In spite that P-BN has been in the market for quite a long time, limited number of fundamental studies regarding the kinetics and the formation mechanism of P-BN have been reported. As it has been demonstrated in CVD of Si, knowledge and both theoretical and empirical modeling of CVD process can be applied to improve the deposition technology and to give more uniform deposition with higher efficiency, and it should also apply to the deposition of P-BN

  6. The role of (sub)-surface oxygen on the surface electronic structure of hydrogen terminated (100) CVD diamond

    NARCIS (Netherlands)

    Deferme, W.; Tanasa, G.; Amir, J.; Haenen, K.; Nesladek, M.; Flipse, C.F.J.

    2006-01-01

    In this work, scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS) were applied to investigate the surface morphol. and the surface electronic structure of plasma-treated (100)-oriented CVD diamond films. These films were hydrogenated using a conventional MWPE-CVD

  7. Influence of duration time of CVD process on emissive properties of carbon nanotubes films

    Directory of Open Access Journals (Sweden)

    Stępinska Izabela

    2015-03-01

    Full Text Available In this paper various types of films made of carbon nanotubes (CNTs are presented. These films were prepared on different substrates (Al2O3, Si n-type by the two-step method. The two-step method consists of physical vapor deposition step, followed by chemical vapor deposition step (PVD/CVD. Parameters of PVD process were the same for all initial films, while the duration times of the second step - the CVD process, were different (15, 30 min.. Prepared films were characterized by scanning electron microscopy (SEM, transmission electron microscopy (TEM and field emission (FE measurements. The I-E and F-N characteristics of electron emission were discussed in terms of various forms of CNT films. The value of threshold electric field ranged from few V/μm (for CNT dispersed rarely on the surface of the film deposited on Si up to ~20 V/μm (for Al2O3 substrate.

  8. Microwave plasma CVD of oxide films relating to high Tc Bi-Sr-Ca-Cu-O superconductor

    International Nuclear Information System (INIS)

    Hashimoto, T.; Kosaka, T.; Yoshida, Y.; Yoshimoto, M.; Koinuma, H.

    1989-01-01

    Microwave plasma CVD was applied to the synthesis of Bi, Sr, Ca, and Cu oxide films at relatively low temperatures. Gas source materials used were Bi(C 6 H 5 ) 3 , Sr(PPM) 2 , Ca(PPM) 2 , and Cu(HFA) 2 , where PPM and HFA represent C 2 F 5 COCHCOC(CH 3 ) 3 and CF 3 COCHCOCF 3 , respectively. Films were deposited on MgO (100) substrate at temperatures between 200 C and 400 C under an atmosphere of 1000mTorr Ar-O 2 (50/100) mixture which was partially excited by plasma. From Bi(C 6 H 5 ) 3 , Bi 2 O 3 was formed at 200 C without containing carbon above the detection level by XPS analysis. From Cu(HFA) 2 , CuO was prepared at 400 C by increasing oxygen partial pressure to 0.1Torr. (At lower oxygen partial pressure, CuF 2 or amorphous films were deposited.) From Sr(PPM) 2 and Ca(PPM) 2 , SrF 2 and CaF 2 were obtained at 400 C. The attempt to fabricate superconducting films is also reported

  9. Effect of substrate bias on deposition behaviour of charged silicon nanoparticles in ICP-CVD process

    International Nuclear Information System (INIS)

    Yoo, Seung-Wan; Kim, Jung-Hyung; Seong, Dae-Jin; You, Shin-Jae; Seo, Byong-Hoon; Hwang, Nong-Moon

    2017-01-01

    The effect of a substrate bias on the deposition behaviour of crystalline silicon films during inductively coupled plasma chemical vapour deposition (ICP-CVD) was analysed by consideration of non-classical crystallization, in which the building block is a nanoparticle rather than an individual atom or molecule. The coexistence of positively and negatively charged nanoparticles in the plasma and their role in Si film deposition are confirmed by applying bias voltages to the substrate, which is sufficiently small as not to affect the plasma potential. The sizes of positively and negatively charged nanoparticles captured on a carbon membrane and imaged using TEM are, respectively, 2.7–5.5 nm and 6–13 nm. The film deposited by positively charged nanoparticles has a typical columnar structure. In contrast, the film deposited by negatively charged nanoparticles has a structure like a powdery compact with the deposition rate about three times higher than that for positively charged nanoparticles. All the films exhibit crystallinity even though the substrate is at room temperature, which is attributed to the deposition of crystalline nanoparticles formed in the plasma. The film deposited by negatively charged nanoparticles has the highest crystalline fraction of 0.84. (paper)

  10. A measure of the interfacial shear strength between SiC(CVD)/B(CVD) filament--aluminum matrix by fragmentation method

    International Nuclear Information System (INIS)

    Jiang, Y.Q.; Chen, X.J.; Yang, D.M.; Fei, X.; Pan, J.

    1993-01-01

    The tensile specimens used are of dog-bone shape and consist of single axial SiC (CVD) /B (CVD) filament processed by CVD and embedded in a LD-2 aluminum alloy. Model composite specimens have been fabricated by a high pressure squeeze casting technique. This paper describes the application of an Acoustic Emission Technique for locating the position of fiber breaks and thus determining the length distribution of fiber fragments resulting when a composite specimen containing a single fiber is loaded to failure. The critical lengths (minimal lengths) are checked by Corrosion Method

  11. Multilayered and composite PVD-CVD coatings in cemented carbides manufacture

    International Nuclear Information System (INIS)

    Glushkov, V.N.; Anikeev, A.I.; Anikin, V.N.; Vereshchaka, A.S.

    2001-01-01

    Carbide cutting tools with wear-resistant coatings deposited by CVD process are widely employed in mechanical engineering to ensure a substantially longer service life of tool systems. However, the relatively high temperature and long time of the process make the substrate decarburise and, as a result, the bend strength and performance characteristics of a tool decrease. The present study suggests the problem of deteriorated strength of CVD-coated carbide tools be solved by the development of a technology that combines arc-PVD and CVD processes to deposit multilayered coatings of titanium and aluminium compounds. (author)

  12. MgO by injection CVD

    International Nuclear Information System (INIS)

    Abrutis, A.; Kubilius, V.; Teiserkis, A.; Bigelyte, V.; Vengalis, B.; Jukna, A.; Butkute, R.

    1997-01-01

    Epitaxial YBa 2 Cu 3 O 7 layers with 45 in-plane orientation have been grown by injection CVD on MgO substrates polished off-axis to within 1.4-1.9 of the [100] direction. This new single-source CVD process is based on computer-controlled injection of precise microdoses of a metal-organic precursor solution into a CVD reactor. A wide range of solution compositions was tested to investigate compositional effects on phase purity, surface morphology, texturing and superconducting properties of the prepared films. The highest quality films with pure 45 texture had a smooth surface, zero resistance T c (R=0) of 88-89 K, and critical current density J c (77 K) above 10 6 A/cm 2 . (orig.) and critical current density J c (77 K) above 10 6 A/cm 2 . (orig.)

  13. Inductively and capacitively coupled plasmas at interface: A comparative study towards highly efficient amorphous-crystalline Si solar cells

    Science.gov (United States)

    Guo, Yingnan; Ong, Thiam Min Brian; Levchenko, I.; Xu, Shuyan

    2018-01-01

    A comparative study on the application of two quite different plasma-based techniques to the preparation of amorphous/crystalline silicon (a-Si:H/c-Si) interfaces for solar cells is presented. The interfaces were fabricated and processed by hydrogen plasma treatment using the conventional plasma-enhanced chemical vacuum deposition (PECVD) and inductively coupled plasma chemical vapour deposition (ICP-CVD) methods The influence of processing temperature, radio-frequency power, treatment duration and other parameters on interface properties and degree of surface passivation were studied. It was found that passivation could be improved by post-deposition treatment using both ICP-CVD and PECVD, but PECVD treatment is more efficient for the improvement on passivation quality, whereas the minority carrier lifetime increased from 1.65 × 10-4 to 2.25 × 10-4 and 3.35 × 10-4 s after the hydrogen plasma treatment by ICP-CVD and PECVD, respectively. In addition to the improvement of carrier lifetimes at low temperatures, low RF powers and short processing times, both techniques are efficient in band gap adjustment at sophisticated interfaces.

  14. Synthesis of few-layer graphene on a Ni substrate by using DC plasma enhanced chemical vapor deposition (PE-CVD)

    International Nuclear Information System (INIS)

    Kim, Jeong Hyuk; Castro, Edward Joseph; Hwang, Yong Gyoo; Lee, Choong Hun

    2011-01-01

    In this work, few-layer graphene (FLG) was successfully grown on polycrystalline Ni a large scale by using DC plasma enhanced chemical vapor deposition (DC PE-CVD), which may serve as an alternative route in large-scale graphene synthesis. The synthesis time had an effect on the quality of the graphene produced. The applied DC voltage, on the other hand, influenced the minimization of the defect densities in the graphene grown. We also present a method of producing a free-standing polymethyl methacrylate (PMMA)/graphene membrane on a FeCl 3(aq) solution, which could then be transferred to the desired substrate.

  15. CVD diamond Brewster window: feasibility study by FEM analyses

    Directory of Open Access Journals (Sweden)

    Vaccaro A.

    2012-09-01

    Full Text Available Chemical vapor deposition (CVD diamond windows are a crucial component in heating and current drive (H&CD applications. In order to minimize the amount of reflected power from the diamond disc, its thickness must match the desired beam wavelength, thus proper targeting of the plasma requires movable beam reflectors. This is the case, for instance, of the ITER electron cyclotron H&CD system. However, looking at DEMO, the higher heat loads and neutron fluxes could make the use of movable parts close to the plasma difficult. The issue might be solved by using gyrotrons able to tune the beam frequency to the desired resonance, but this concept requires transmission windows that work in a given frequency range, such as the Brewster window. It consists of a CVD diamond disc brazed to two copper cuffs at the Brewster angle. The brazing process is carried out at about 800°C and then the temperature is decreased down to room temperature. Diamond and copper have very different thermal expansion coefficients, therefore high stresses build up during the cool down phase that might lead to failure of the disc. Considering also the complex geometry of the window with the skewed position of the disc, analyses are required in the first place to check its feasibility. The cool down phase was simulated by FEM structural analyses for several geometric and constraint configurations of the window. A study of indirect cooling of the window by water was also performed considering a HE11 mode beam. The results are here reported.

  16. CVD growth of graphene under exfoliated hexagonal boron nitride for vertical hybrid structures

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Min [SKKU Advanced Institute of Nanotechnology (SAINT) (Korea, Republic of); Center for Human Interface Nanotechnology (HINT) (Korea, Republic of); Jang, Sung Kyu [SKKU Advanced Institute of Nanotechnology (SAINT) (Korea, Republic of); Song, Young Jae [SKKU Advanced Institute of Nanotechnology (SAINT) (Korea, Republic of); Department of Physics, Sungkyunkwan University (SKKU), Suwon 440-746 (Korea, Republic of); Lee, Sungjoo, E-mail: leesj@skku.edu [SKKU Advanced Institute of Nanotechnology (SAINT) (Korea, Republic of); Center for Human Interface Nanotechnology (HINT) (Korea, Republic of); College of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon 440-746 (Korea, Republic of)

    2015-01-15

    Graphical abstract: We have demonstrated a novel yet simple method for fabricating graphene-based vertical hybrid structures by performing the CVD growth of graphene at an h-BN/Cu interface. Our systematic Raman measurements combined with plasma etching process indicate that a graphene film is grown under exfoliated h-BN rather than on its top surface, and that an h-BN/graphene vertical hybrid structure has been fabricated. Electrical transport measurements of this h-BN/graphene, transferred on SiO2, show the carrier mobility up to approximately 2250 cm{sup 2} V{sup −1} s{sup −1}. The developed method would enable the exploration of the possibility of novel hybrid structure integration with two-dimensional material systems. - Abstract: We have demonstrated a novel yet simple method for fabricating graphene-based vertical hybrid structures by performing the CVD growth of graphene at an h-BN/Cu interface. Our systematic Raman measurements combined with plasma etching process indicate that a graphene film is grown under exfoliated h-BN rather than on its top surface, and that an h-BN/graphene vertical hybrid structure has been fabricated. Electrical transport measurements of this h-BN/graphene, transferred on SiO{sub 2}, show the carrier mobility up to approximately 2250 cm{sup 2} V{sup −1} s{sup −1}. The developed method would enable the exploration of the possibility of novel hybrid structure integration with two-dimensional material systems.

  17. CVD growth of graphene under exfoliated hexagonal boron nitride for vertical hybrid structures

    International Nuclear Information System (INIS)

    Wang, Min; Jang, Sung Kyu; Song, Young Jae; Lee, Sungjoo

    2015-01-01

    Graphical abstract: We have demonstrated a novel yet simple method for fabricating graphene-based vertical hybrid structures by performing the CVD growth of graphene at an h-BN/Cu interface. Our systematic Raman measurements combined with plasma etching process indicate that a graphene film is grown under exfoliated h-BN rather than on its top surface, and that an h-BN/graphene vertical hybrid structure has been fabricated. Electrical transport measurements of this h-BN/graphene, transferred on SiO2, show the carrier mobility up to approximately 2250 cm 2 V −1 s −1 . The developed method would enable the exploration of the possibility of novel hybrid structure integration with two-dimensional material systems. - Abstract: We have demonstrated a novel yet simple method for fabricating graphene-based vertical hybrid structures by performing the CVD growth of graphene at an h-BN/Cu interface. Our systematic Raman measurements combined with plasma etching process indicate that a graphene film is grown under exfoliated h-BN rather than on its top surface, and that an h-BN/graphene vertical hybrid structure has been fabricated. Electrical transport measurements of this h-BN/graphene, transferred on SiO 2 , show the carrier mobility up to approximately 2250 cm 2 V −1 s −1 . The developed method would enable the exploration of the possibility of novel hybrid structure integration with two-dimensional material systems

  18. Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD).

    Science.gov (United States)

    Böke, Frederik; Giner, Ignacio; Keller, Adrian; Grundmeier, Guido; Fischer, Horst

    2016-07-20

    Densely sintered aluminum oxide (α-Al2O3) is chemically and biologically inert. To improve the interaction with biomolecules and cells, its surface has to be modified prior to use in biomedical applications. In this study, we compared two deposition techniques for adhesion promoting SiOx films to facilitate the coupling of stable organosilane monolayers on monolithic α-alumina; physical vapor deposition (PVD) by thermal evaporation and plasma enhanced chemical vapor deposition (PE-CVD). We also investigated the influence of etching on the formation of silanol surface groups using hydrogen peroxide and sulfuric acid solutions. The film characteristics, that is, surface morphology and surface chemistry, as well as the film stability and its adhesion properties under accelerated aging conditions were characterized by means of X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), inductively coupled plasma-optical emission spectroscopy (ICP-OES), and tensile strength tests. Differences in surface functionalization were investigated via two model organosilanes as well as the cell-cytotoxicity and viability on murine fibroblasts and human mesenchymal stromal cells (hMSC). We found that both SiOx interfaces did not affect the cell viability of both cell types. No significant differences between both films with regard to their interfacial tensile strength were detected, although failure mode analyses revealed a higher interfacial stability of the PE-CVD films compared to the PVD films. Twenty-eight day exposure to simulated body fluid (SBF) at 37 °C revealed a partial delamination of the thermally deposited PVD films whereas the PE-CVD films stayed largely intact. SiOx layers deposited by both PVD and PE-CVD may thus serve as viable adhesion-promoters for subsequent organosilane coupling agent binding to α-alumina. However, PE-CVD appears to be favorable for long-term direct film exposure to aqueous

  19. Bridge between fusion plasma and plasma processing

    International Nuclear Information System (INIS)

    Ohno, Noriyasu; Takamura, Shuichi

    2008-01-01

    In the present review, relationship between fusion plasma and processing plasma is discussed. From boundary-plasma studies in fusion devices new applications such as high-density plasma sources, erosion of graphite in a hydrogen plasma, formation of helium bubbles in high-melting-point metals and the use of toroidal plasmas for plasma processing are emerging. The authors would like to discuss a possibility of knowledge transfer from fusion plasmas to processing plasmas. (T. Ikehata)

  20. The gate oxide integrity of CVD tungsten polycide

    International Nuclear Information System (INIS)

    Wu, N.W.; Su, W.D.; Chang, S.W.; Tseng, M.F.

    1988-01-01

    CVD tungsten polycide has been demonstrated as a good gate material in recent very large scale integration (VLSI) technology. CVD tungsten silicide offers advantages of low resistivity, high temperature stability and good step coverage. On the other hand, the polysilicon underlayer preserves most characteristics of the polysilicon gate and acts as a stress buffer layer to absorb part of the thermal stress origin from the large thermal expansion coefficient of tungsten silicide. Nevertheless, the gate oxide of CVD tungsten polycide is less stable or reliable than that of polysilicon gate. In this paper, the gate oxide integrity of CVD tungsten polycide with various thickness combinations and different thermal processes have been analyzed by several electrical measurements including breakdown yield, breakdown fluence, room temperature TDDB, I-V characteristics, electron traps and interface state density

  1. Surface structuring of boron doped CVD diamond by micro electrical discharge machining

    Science.gov (United States)

    Schubert, A.; Berger, T.; Martin, A.; Hackert-Oschätzchen, M.; Treffkorn, N.; Kühn, R.

    2018-05-01

    Boron doped diamond materials, which are generated by Chemical Vapor Deposition (CVD), offer a great potential for the application on highly stressed tools, e. g. in cutting or forming processes. As a result of the CVD process rough surfaces arise, which require a finishing treatment in particular for the application in forming tools. Cutting techniques such as milling and grinding are hardly applicable for the finish machining because of the high strength of diamond. Due to its process principle of ablating material by melting and evaporating, Electrical Discharge Machining (EDM) is independent of hardness, brittleness or toughness of the workpiece material. EDM is a suitable technology for machining and structuring CVD diamond, since boron doped CVD diamond is electrically conductive. In this study the ablation characteristics of boron doped CVD diamond by micro electrical discharge machining are investigated. Experiments were carried out to investigate the influence of different process parameters on the machining result. The impact of tool-polarity, voltage and discharge energy on the resulting erosion geometry and the tool wear was analyzed. A variation in path overlapping during the erosion of planar areas leads to different microstructures. The results show that micro EDM is a suitable technology for finishing of boron doped CVD diamond.

  2. Low-pressure c-BN deposition - is a CVD process possible?

    International Nuclear Information System (INIS)

    Haubner, R.; Tang, X.

    2001-01-01

    Since the low-pressure diamond deposition was discovered in 1982 there is a high interest to find a similar process for the c-BN synthesis. A review about the c-BN deposition process as well as its characterization is given. Experiments with a simple chemical vapor deposition(CVD) reactor using tris(dimethylamino)borane as precursor were carried out. In a cold-wall reactor substrates were heated up by high-frequency. Argon was used as protecting and carrying the precursor, it was saturated with tris(dimethylamino)borane (precursor) according to its vapor pressure and transports the pressure to the hot substrate, where deposition occurs. WC-Co hardmetal plates containing 6 wt. % Co, Mo and Si were used as substrates. Various BN layers were deposited and characterized. X-ray diffraction, IR-spectroscopy and SIMS indicate that BN-coatings containing c-BN were deposited. However a final verification of c-BN crystallites by TEM investigations was not possible till now. (nevyjel)

  3. Hard Coat Layers by PE-CVD Process for the Top Surface of Touch Panel

    International Nuclear Information System (INIS)

    Okunishi, T; Sato, N; Yazawa, K

    2013-01-01

    In order to protect surface from damages, the high pencil hardness and the high abrasion resistance are required for the hard coat layers on polyethylene telephthalate (PET) films for the application of touch panel surface. We have already found that the UV-curing-hard-coat-polymer (UHP) coated PET films show the poor abrasion resistance, while they have the high pencil hardness. It reveals that the abrasion resistance of hard coat layers of the UHP is not simply dependent on the pencil hardness. In this work, we have studied to improve the abrasion resistance of SiOC films as hard coat layers, which were formed by PE-CVD process on UHP coated PET. The abrasion resistance was evaluated by Taber abrasion test. PE-CVD hard coat layers which formed on UHP coater PET films have showed the better abrasion resistance and have the possibility of substitution to the thin glass sheets for touch panel application.

  4. Origin, state of the art and some prospects of the diamond CVD

    CERN Document Server

    Spitsyn, B V; Alexenko, A E

    2000-01-01

    A short review on the diamond CVD origin, together with its state of the art and some prospects was given. New hybrid methods of the diamond CVD permit to gain 1.2 to 6 times of growth rate in comparison with ordinary diamond CVD's. Recent results on n-type diamond film synthesis through phosphorus doping in the course of the CVD process are briefly discussed. In comparison with high-pressure diamond synthesis, the CVD processes open new facets of the diamond as ultimate crystal for science and technology evolution. It was stressed that, mainly on the basis of new CVDs of diamond, the properties of natural diamond are not only reproduced, but can be surpassed. As examples, mechanical (fracture resistance), physical (thermal conductivity), and chemical (oxidation stability) properties are mentioned. Some present issues in the field are considered.

  5. Industrial science and technology research and development project of university cooperative type in fiscal 2000. Report on achievements in semiconductor device manufacturing processes using Cat-CVD method (Development of technology to rationalize energy usage); 2000 nendo daigaku renkeigata sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (energy shiyo gorika gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The catalytic chemical vapor deposition (Cat-CVD) method is a low-temperature thin film depositing technology that can achieve improvement in quality of semiconductor thin films and can perform inexpensive film deposition in a large area. This paper summarizes the achievements in fiscal 2000 in the demonstrative research and development theme of the present project, centering on the following five areas: 1) discussions on application of the Cat-CVD method to the mass production process for gallium arsenide integrated circuits, 2) studies on the possibility to apply the Cat-CVD method to the process to fabricate nitrided silicon protective film for ferroelectric memory devices, 3) formation of nitrided silicon films for silicon integrated circuits by means of the Cat-CVD method, and development of a chamber cleaning technology, 4) fabrication of high-mobility poly-crystalline silicon thin film transistors formed by using the Cat-CVD method and large particle size poly-crystalline silicon films by using the catalytic chemical sputtering process, and 5) discussions on properties of amorphous silicon thin film transistors formed by using the Cat-CVD method and formation of large area films by using a catalyst integrated shower head. (NEDO)

  6. CVD carbon powders modified by ball milling

    Directory of Open Access Journals (Sweden)

    Kazmierczak Tomasz

    2015-09-01

    Full Text Available Carbon powders produced using a plasma assisted chemical vapor deposition (CVD methods are an interesting subject of research. One of the most interesting methods of synthesizing these powders is using radio frequency plasma. This method, originally used in deposition of carbon films containing different sp2/sp3 ratios, also makes possible to produce carbon structures in the form of powder. Results of research related to the mechanical modification of these powders have been presented. The powders were modified using a planetary ball mill with varying parameters, such as milling speed, time, ball/powder mass ratio and additional liquids. Changes in morphology and particle sizes were measured using scanning electron microscopy and dynamic light scattering. Phase composition was analyzed using Raman spectroscopy. The influence of individual parameters on the modification outcome was estimated using statistical method. The research proved that the size of obtained powders is mostly influenced by the milling speed and the amount of balls. Powders tend to form conglomerates sized up to hundreds of micrometers. Additionally, it is possible to obtain nanopowders with the size around 100 nm. Furthermore, application of additional liquid, i.e. water in the process reduces the graphitization of the powder, which takes place during dry milling.

  7. Response of CVD diamond detectors to alpha radiation

    Energy Technology Data Exchange (ETDEWEB)

    Souw, E.-K. [Brookhaven National Lab., Upton, NY (United States); Meilunas, R.J. [Northrop-Grumman Corporation, Bethpage, NY 11714-3582 (United States)

    1997-11-21

    This article describes some results from an experiment with CVD diamond films used as {alpha} particle detectors. It demonstrates that bulk polarization can be effectively stopped within a reasonable time interval. This will enable detector calibration and quantitative measurement. A possible mechanism for the observed polarization quenching is discussed. It involves two types of carrier traps and a tentative band-gap model derived from the results of photoconductive current measurements. The experiment was set up mainly to investigate {alpha} detection properties of polycrystalline diamond films grown by the technique of microwave plasma enhanced chemical vapor deposition. For comparison, two commercially purchased diamond wafers were also investigated, i.e., one grown by the DC arc jet method, and the other, a type-IIa natural diamond wafer (not preselected). The best response to {alpha} particles was obtained using diamond thin-films grown by the microwave PECVD method, followed by the type-IIa natural diamond, and finally, the CVD diamond grown by the DC arc jet technique. (orig.). 43 refs.

  8. Ion beam figuring of CVD silicon carbide mirrors

    Science.gov (United States)

    Gailly, P.; Collette, J.-P.; Fleury Frenette, K.; Jamar, C.

    2017-11-01

    Optical and structural elements made of silicon carbide are increasingly found in space instruments. Chemical vapor deposited silicon carbide (CVD-SiC) is used as a reflective coating on SiC optics in reason of its good behavior under polishing. The advantage of applying ion beam figuring (IBF) to CVD-SiC over other surface figure-improving techniques is discussed herein. The results of an IBF sequence performed at the Centre Spatial de Liège on a 100 mm CVD-SiC mirror are reported. The process allowed to reduce the mirror surface errors from 243 nm to 13 nm rms . Beside the surface figure, roughness is another critical feature to consider in order to preserve the optical quality of CVD-SiC . Thus, experiments focusing on the evolution of roughness were performed in various ion beam etching conditions. The roughness of samples etched at different depths down to 3 ≠m was determined with an optical profilometer. These measurements emphasize the importance of selecting the right combination of gas and beam energy to keep roughness at a low level. Kaufman-type ion sources are generally used to perform IBF but the performance of an end-Hall ion source in figuring CVD-SiC mirrors was also evaluated in this study. In order to do so, ion beam etching profiles obtained with the end-Hall source on CVD-SiC were measured and used as a basis for IBF simulations.

  9. Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films

    DEFF Research Database (Denmark)

    Leervad Pedersen, T.P.; Skov Jensen, J.; Chevallier, J.

    2005-01-01

    The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO2 thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can...

  10. Production and transport chemistry of atomic fluorine in remote plasma source and cylindrical reaction chamber

    International Nuclear Information System (INIS)

    Gangoli, S P; Johnson, A D; Fridman, A A; Pearce, R V; Gutsol, A F; Dolgopolsky, A

    2007-01-01

    Increasingly, NF 3 -based plasmas are being used in semiconductor manufacturing to clean chemical vapour deposition (CVD) chambers. With advantages such as faster clean times, substantially lower emissions of gases having high global warming potentials, and reduced chamber damage, NF 3 plasmas are now favoured over fluorocarbon-based processes. Typically, a remote plasma source (RPS) is used to dissociate the NF 3 gas and produce atomic fluorine that etches the CVD residues from the chamber surfaces. However, it is important to efficiently transport F atoms from the plasma source into the process chamber. The current work is aimed at understanding and improving the key processes involved in the production and transport of atomic fluorine atoms. A zero-dimensional model of NF 3 dissociation and F production chemistry in the RPS is developed based on various known and derived plasma parameters. Additionally, a model describing the transport of atomic fluorine is proposed that includes both physical (diffusion, adsorption and desorption) and chemical processes (surface and three-body volume recombination). The kinetic model provides an understanding of the impact of chamber geometry, gas flow rates, pressure and temperature on fluorine recombination. The plasma-kinetic model is validated by comparing model predictions (percentage F atom density) with experimental results (etch rates)

  11. Thermal Analysis of Cold Vacuum Drying (CVD) of Spent Nuclear Fuel (SNF)

    International Nuclear Information System (INIS)

    PIEPHO, M.G.

    2000-01-01

    The thermal analysis examined transient thermal and chemical behavior of the Multi-Canister Overpack (MCO) container for a broad range of cases that represent the Cold Vacuum Drying (CVD) processes. The cases were defined to consider both normal and off-normal operations at the CVD Facility for an MCO with N Reactor spent fuel. This analysis provides the basis for the MCO thermal behavior at the CVD Facility in support of the safety basis documentation

  12. Ultralow field emission from thinned, open-ended, and defected carbon nanotubes by using microwave hydrogen plasma processing

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Jian-Hua, E-mail: jhdeng1983@163.com [College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China); Cheng, Lin; Wang, Fan-Jie; Yu, Bin; Li, Guo-Zheng; Li, De-Jun [College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China); Cheng, Guo-An [Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875 (China)

    2015-01-01

    Graphical abstract: Thinned, open-ended, and defected carbon nanotubes were prepared by using hydrogen plasma processing. The processed carbon nanotubes have far better field emission performance than that of the pristine ones. - Highlights: • CVD prepared CNT arrays were processed by microwave hydrogen plasma. • Thinned, open-ended, and defected CNTs were obtained. • Processed CNTs have far better field emission performance than the pristine ones. • Processed CNTs have applicable emission stability after being perfectly aged. - Abstract: Ultralow field emission is achieved from carbon nanotubes (CNTs) by using microwave hydrogen plasma processing. After the processing, typical capped CNT tips are removed, with thinned, open-ended, and defected CNTs left. Structural analyses indicate that the processed CNTs have more SP{sup 3}-hybridized defects as compared to the pristine ones. The morphology of CNTs can be readily controlled by adjusting microwave powers, which change the shape of CNTs by means of hydrogen plasma etching. Processed CNTs with optimal morphology are found to have an ultralow turn-on field of 0.566 V/μm and threshold field of 0.896 V/μm, much better than 0.948 and 1.559 V/μm of the as-grown CNTs, respectively. This improved FE performance is ascribed to the structural changes of CNTs after the processing. The thinned and open-ended shape of CNTs can facilitate electron tunneling through barriers and additionally, the increased defects at tube walls can serve as new active emission sites. Furthermore, our plasma processed CNTs exhibit excellent field emission stability at a large emission current density of 10.36 mA/cm{sup 2} after being perfectly aged, showing promising prospects in applications as high-performance vacuum electron sources.

  13. Plasma calprotectin and its association with cardiovascular disease manifestations, obesity and the metabolic syndrome in type 2 diabetes mellitus patients

    DEFF Research Database (Denmark)

    Pedersen, Lise; Nybo, M.; Poulsen, M. K.

    2014-01-01

    Background: Plasma calprotectin is a potential biomarker of cardiovascular disease (CVD), insulin resistance (IR), and obesity. We examined the relationship between plasma calprotectin concentrations, CVD manifestations and the metabolic syndrome (MetS) in patients with type 2 diabetes mellitus (T2......DM) in order to evaluate plasma calprotectin as a risk assessor of CVD in diabetic patients without known CVD. Methods: An automated immunoassay for determination of plasma calprotectin was developed based on a fecal Calprotectin ELIA, and a reference range was established from 120 healthy adults...... associated with obesity, MetS status, autonomic neuropathy, PAD, and MI. However, plasma calprotectin was not an independent predictor of CVD, MI, autonomic neuropathy or PAD....

  14. Toroidal plasma enhanced CVD of diamond films

    International Nuclear Information System (INIS)

    Zvanya, John; Cullen, Christopher; Morris, Thomas; Krchnavek, Robert R.; Holber, William; Basnett, Andrew; Basnett, Robert; Hettinger, Jeffrey

    2014-01-01

    An inductively coupled toroidal plasma source is used as an alternative to microwave plasmas for chemical vapor deposition of diamond films. The source, operating at a frequency of 400 kHz, synthesizes diamond films from a mixture of argon, methane, and hydrogen. The toroidal design has been adapted to create a highly efficient environment for diamond film deposition: high gas temperature and a short distance from the sample to the plasma core. Using a toroidal plasma geometry operating in the medium frequency band allows for efficient (≈90%) coupling of AC line power to the plasma and a scalable path to high-power and large-area operation. In test runs, the source generates a high flux of atomic hydrogen over a large area, which is favorable for diamond film growth. Using a deposition temperature of 900–1050 °C and a source to sample distance of 0.1–2.0 cm, diamond films are deposited onto silicon substrates. The results showed that the deposition rate of the diamond films could be controlled using the sample temperature and source to sample spacing. The results also show the films exhibit good-quality polycrystalline diamond as verified by Raman spectroscopy, x-ray diffraction, and scanning electron microscopy. The scanning electron microscopy and x-ray diffraction results show that the samples exhibit diamond (111) and diamond (022) crystallites. The Raman results show that the sp 3 peak has a narrow spectral width (FWHM 12 ± 0.5 cm −1 ) and that negligible amounts of the sp 2 band are present, indicating good-quality diamond films

  15. Interlayer utilization (including metal borides) for subsequent deposition of NSD films via microwave plasma CVD on 316 and 440C stainless steels

    Science.gov (United States)

    Ballinger, Jared

    . Surface boriding was implemented using the novel method of microwave plasma CVD with a mixture of hydrogen and diborane gases. On 440C bearings, dual phase boride layers of Fe2B and FeB were formed which supported adhered nanostructured diamond films. Continuity of the films was not seamless with limited regions remaining uncoated potentially corresponding to delamination of the film as evidenced by the presence of tubular structures presumably composed of sp2 bonded carbon. Surface boriding of 316 stainless steel discs was conducted at various powers and pressures to achieve temperatures ranging from 550-800 °C. The substrate boriding temperature was found to substantially influence the resultant interlayer by altering the metal boride(s) present. The lowest temperatures produced an interlayer where CrB was the single detected phase, higher temperatures yielded the presence of only Fe2B, and a combination of the two phases resulted from an intermediate boriding temperature. Compared with the more common, commercialized boriding methods, this a profound result given the problems posed by the FeB phase in addition to other advantages offered by CVD processes and microwave generated plasmas in general. Indentation testing of the boride layers revealed excellent adhesion strength for all borided interlayers, and above all, no evidence of cracking was observed for a sole Fe2B phase. As with boriding of 440C bearings, subsequent diamond deposition was achieved on these interlayers with substantially improved adhesion strength relative to diamond coated TiN interlayers. Both XRD and Raman spectroscopy confirmed a nanostructured diamond film with interfacial chromium carbides responsible for enhanced adhesion strength. Interlayers consisting solely of Fe2B have displayed an ability to support fully continuous nanostructured diamond films, yet additional study is required for consistent reproduction. This is in good agreement with initial work on pack borided high alloy steels

  16. Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene

    Science.gov (United States)

    Shautsova, Viktoryia; Gilbertson, Adam M.; Black, Nicola C. G.; Maier, Stefan A.; Cohen, Lesley F.

    2016-07-01

    We report a CVD hexagonal boron nitride (hBN-) assisted transfer method that enables a polymer-impurity free transfer process and subsequent top encapsulation of large-area CVD-grown graphene. We demonstrate that the CVD hBN layer that is utilized in this transfer technique acts as a buffer layer between the graphene film and supporting polymer layer. We show that the resulting graphene layers possess lower doping concentration, and improved carrier mobilities compared to graphene films produced by conventional transfer methods onto untreated SiO2/Si, SAM-modified and hBN covered SiO2/Si substrates. Moreover, we show that the top hBN layer used in the transfer process acts as an effective top encapsulation resulting in improved stability to ambient exposure. The transfer method is applicable to other CVD-grown 2D materials on copper foils, thereby facilitating the preparation of van der Waals heterostructures with controlled doping.

  17. Optical study of defects in nanodiamond films grown in linear antenna microwave plasma CVD from H.sub.2./sub./CH.sub.4./sub./CO.sub.2./sub. gas mixture

    Czech Academy of Sciences Publication Activity Database

    Varga, Marián; Remeš, Zdeněk; Babchenko, Oleg; Kromka, Alexander

    2012-01-01

    Roč. 249, č. 12 (2012), s. 2635-2639 ISSN 0370-1972 R&D Projects: GA ČR(CZ) GAP108/11/0794; GA ČR GAP205/12/0908; GA MŠk LH12236 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond * optical spectroscopy * wide band gap semiconductors * pulsed linear plasma CVD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.489, year: 2012

  18. Plasma processing for VLSI

    CERN Document Server

    Einspruch, Norman G

    1984-01-01

    VLSI Electronics: Microstructure Science, Volume 8: Plasma Processing for VLSI (Very Large Scale Integration) discusses the utilization of plasmas for general semiconductor processing. It also includes expositions on advanced deposition of materials for metallization, lithographic methods that use plasmas as exposure sources and for multiple resist patterning, and device structures made possible by anisotropic etching.This volume is divided into four sections. It begins with the history of plasma processing, a discussion of some of the early developments and trends for VLSI. The second section

  19. Future prospect of remote Cat-CVD on the basis of the production, transportation and detection of H atoms

    International Nuclear Information System (INIS)

    Umemoto, Hironobu; Matsumura, Hideki

    2008-01-01

    The future prospect of remote Cat-CVD, in which the decomposition and the deposition chambers are separated, is discussed on the basis of the absolute density measurements of H atoms. It is now well recognized that uniform deposition is possible on a large area without plasma damages by Cat-CVD. However, we may not overlook the demerits in Cat-CVD. One of the demerits is the poisoning of the catalyzer surfaces by the material gases, both temporary and permanent. One technique to overcome this problem is remote Cat-CVD. The question is how to separate the decomposition and deposition areas. If the separation is not enough, there should be back diffusion of the material gases, which will poison the catalyzers. If the separation is too tight, radicals may not effuse out from the decomposition chamber. These problems are discussed and it is shown that SiO 2 coating to reduce the radical recombination rates on walls is promising. The possibility of the polytetrafluoroethene coating by Cat-CVD is also discussed

  20. Antimicrobial Effectiveness of Cellulose based Fabrics treated with Silver Nitrate Solution using Plasma Processes

    Directory of Open Access Journals (Sweden)

    Jelena Peran

    2017-12-01

    Full Text Available In order to obtain antibacterial properties, the possibility of deposition of silver particles from silver nitrate (AgNO3 solutions by plasma deposition process using argon as a carrier gas (PDP-Ar was explored. Hexamethyldisiloxane and acrylic acid were used as precursors and were deposited by plasma enhanced-chemical vapor deposition (PE-CVD. The processes were carried out on lyocell and modal fbrics and antimicrobial efficacy was determined on E. coli and S. aureus using time kill assay method. The results of minimal inhibitory concentration (MIC show that higher antimicrobial efficacy on E. coli is exhibited by the solution of (AgNO3 in ethylene-glycol (0.066 μg/ml rather than in absolute ethanol (0.265 μg/ml. For S. aureus, minimal inhibitory concentrations of AgNO3 solutions in both absolute ethanol and ethylene-glycol as solvents are obtained at the same value (0.132 μg/ml. Overall, the best antibacterial eff ect for both modal and lyocell samples has been achieved against E. coli using treatments with precursors (AAC and HMDSO and Ag-NO3 in ethylene-glycol as solvent, with prolonged incubation time.

  1. Scalable graphene production: perspectives and challenges of plasma applications

    Science.gov (United States)

    Levchenko, Igor; Ostrikov, Kostya (Ken); Zheng, Jie; Li, Xingguo; Keidar, Michael; B. K. Teo, Kenneth

    2016-05-01

    Graphene, a newly discovered and extensively investigated material, has many unique and extraordinary properties which promise major technological advances in fields ranging from electronics to mechanical engineering and food production. Unfortunately, complex techniques and high production costs hinder commonplace applications. Scaling of existing graphene production techniques to the industrial level without compromising its properties is a current challenge. This article focuses on the perspectives and challenges of scalability, equipment, and technological perspectives of the plasma-based techniques which offer many unique possibilities for the synthesis of graphene and graphene-containing products. The plasma-based processes are amenable for scaling and could also be useful to enhance the controllability of the conventional chemical vapour deposition method and some other techniques, and to ensure a good quality of the produced graphene. We examine the unique features of the plasma-enhanced graphene production approaches, including the techniques based on inductively-coupled and arc discharges, in the context of their potential scaling to mass production following the generic scaling approaches applicable to the existing processes and systems. This work analyses a large amount of the recent literature on graphene production by various techniques and summarizes the results in a tabular form to provide a simple and convenient comparison of several available techniques. Our analysis reveals a significant potential of scalability for plasma-based technologies, based on the scaling-related process characteristics. Among other processes, a greater yield of 1 g × h-1 m-2 was reached for the arc discharge technology, whereas the other plasma-based techniques show process yields comparable to the neutral-gas based methods. Selected plasma-based techniques show lower energy consumption than in thermal CVD processes, and the ability to produce graphene flakes of various

  2. Scalable graphene production: perspectives and challenges of plasma applications.

    Science.gov (United States)

    Levchenko, Igor; Ostrikov, Kostya Ken; Zheng, Jie; Li, Xingguo; Keidar, Michael; B K Teo, Kenneth

    2016-05-19

    Graphene, a newly discovered and extensively investigated material, has many unique and extraordinary properties which promise major technological advances in fields ranging from electronics to mechanical engineering and food production. Unfortunately, complex techniques and high production costs hinder commonplace applications. Scaling of existing graphene production techniques to the industrial level without compromising its properties is a current challenge. This article focuses on the perspectives and challenges of scalability, equipment, and technological perspectives of the plasma-based techniques which offer many unique possibilities for the synthesis of graphene and graphene-containing products. The plasma-based processes are amenable for scaling and could also be useful to enhance the controllability of the conventional chemical vapour deposition method and some other techniques, and to ensure a good quality of the produced graphene. We examine the unique features of the plasma-enhanced graphene production approaches, including the techniques based on inductively-coupled and arc discharges, in the context of their potential scaling to mass production following the generic scaling approaches applicable to the existing processes and systems. This work analyses a large amount of the recent literature on graphene production by various techniques and summarizes the results in a tabular form to provide a simple and convenient comparison of several available techniques. Our analysis reveals a significant potential of scalability for plasma-based technologies, based on the scaling-related process characteristics. Among other processes, a greater yield of 1 g × h(-1) m(-2) was reached for the arc discharge technology, whereas the other plasma-based techniques show process yields comparable to the neutral-gas based methods. Selected plasma-based techniques show lower energy consumption than in thermal CVD processes, and the ability to produce graphene flakes of

  3. Advanced research and development for plasma processing of polymers with combinatorial plasma-process analyzer

    International Nuclear Information System (INIS)

    Setsuhara, Yuichi; Cho, Ken; Takenaka, Kosuke; Shiratani, Masaharu; Sekine, Makoto; Hori, Masaru

    2010-01-01

    A plasma-process analyzer has been developed on the basis of combinatorial method, in which process examinations with continuous variations of plasma-process conditions can be carried out on a substrate holder with an inclined distribution of process parameters. Combinatorial plasma-process analyses have been demonstrated for examinations of plasma-polymer interactions in terms of etching characteristics and surface morphologies in order to show feasibility and effectiveness of the methodology as advanced research and development for next-generation plasma nano processes. The etching properties and surface morphologies have been investigated for polyethylene terephthalate (PET) films exposed to argon-oxygen mixture plasmas. The etching depth data obtained from three independent batches of the experiments showed universal and almost linear dependence with increasing product of (ion saturation current) x (exposure time); i.e. ion dose. Surface roughness of the polymer slightly increased with increasing ion dose, while the mean spacing after plasma exposure was found to decrease monotonically with increasing ion dose but was saturated at the level of approximately 250 nm.

  4. Selective CVD tungsten on silicon implanted SiO/sub 2/

    International Nuclear Information System (INIS)

    Hennessy, W.A.; Ghezzo, M.; Wilson, R.H.; Bakhru, H.

    1988-01-01

    The application range of selective CVD tungsten is extended by its coupling to the ion implantation of insulating materials. This article documents the results of selective CVD tungsten using silicon implanted into SiO/sub 2/ to nucleate the tungsten growth. The role of implant does, energy, and surface preparation in achieving nucleation are described. SEM micrographs are presented to demonstrate the selectivity of this process. Measurements of the tungsten film thickness and sheet resistance are provided for each of the experimental variants corresponding to successful deposition. RBS and XPS analysis are discussed in terms of characterizing the tungsten/oxide interface and to evaluate the role of the silicon implant in the CVD tungsten mechanism. Utilizing this method a desired metallization pattern can be readily defined with lithography and ion implantation, and accurately replicated with a layer of CVD tungsten. This approach avoids problems usually associated with blanket deposition and pattern transfer, which are particularly troublesome for submicron VLSI technology

  5. CVD-graphene for low equivalent series resistance in rGO/CVD-graphene/Ni-based supercapacitors

    Science.gov (United States)

    Kwon, Young Hwi; Kumar, Sunil; Bae, Joonho; Seo, Yongho

    2018-05-01

    Reduced equivalent series resistance (ESR) is necessary, particularly at a high current density, for high performance supercapacitors, and the interface resistance between the current collector and electrode material is one of the main components of ESR. In this report, we have optimized chemical vapor deposition-grown graphene (CVD-G) on a current collector (Ni-foil) using reduced graphene oxide as an active electrode material to fabricate an electric double layer capacitor with reduced ESR. The CVD-G was grown at different cooling rates—20 °C min‑1, 40 °C min‑1 and 100 °C min‑1—to determine the optimum conditions. The lowest ESR, 0.38 Ω, was obtained for a cell with a 100 °C min‑1 cooling rate, while the sample without a CVD-G interlayer exhibited 0.80 Ω. The CVD-G interlayer-based supercapacitors exhibited fast CD characteristics with high scan rates up to 10 Vs‑1 due to low ESR. The specific capacitances deposited with CVD-G were in the range of 145.6 F g‑1–213.8 F g‑1 at a voltage scan rate of 0.05 V s‑1. A quasi-rectangular behavior was observed in the cyclic voltammetry curves, even at very high scan rates of 50 and 100 V s‑1, for the cell with optimized CVD-G at higher cooling rates, i.e. 100 °C min‑1.

  6. Cold-walled UHV/CVD batch reactor for the growth of Si1_x/Gex layers

    DEFF Research Database (Denmark)

    Thomsen, Erik Vilain; Christensen, Carsten; Andersen, C.R.

    1997-01-01

    A novel cold-walled, lamp-heated, ultrahigh vacuum chemical vapor deposition (UHV/CVD) batch system for the growth of SiGe layers is presented. This system combines the batch capability of the standard UHV/CVD furnace with the temperature processing available in rapid thermal processing (Rm...

  7. CVD tungsten metallization and electron beam lithography for fabricating submicron interconnects for advanced ULSI

    International Nuclear Information System (INIS)

    Wilson, S.R.; Mattox, R.J.

    1988-01-01

    CVD W (0.45μm thick) and CVD W (0.25μm thick) strapped by Al (0.5μm thick) have been used as metal 1 systems. Electrical and physical data are presented from experiments exploring the effects of processing issues with both e-beam and stepper lithography as well as dry etch chemistry on both metal systems. The special issues encountered with the thick tungsten processing were: (i) Significant e-beam proximity related problems as compared to the sandwich metal layers. The resultant e-beam proximity problem contributed to a high level of metal bridging and poor CD control. (ii) Multiple etch related problems due to mask failure and a lack of etch selectivity. The multilevel masks utilized, consisting of photoresist and plasma enhanced oxide (PEO), failed due to the poor etch selectivity. Poor etch selectivity with respect to the underlying oxide was also observed. These issues were addressed with thicker organic and PEO mask layers as well as changes in etch chemistry. These thick layers were successful in preventing the loss of the mask during etch., but caused problems in the e-beam CD control and did not prevent the degradation of the underlying glass. A higher selectivity etch was developed which greatly reduced the underlying dielectric damage and also allowed the use of the thinner organic and PEO hardmask layers without mask failure

  8. Efecto del argon en películas CNxHy depositadas mediante ECR-CVD

    Directory of Open Access Journals (Sweden)

    Albella, J. M.

    2004-04-01

    Full Text Available Carbon nitride films have been deposited by ECR-CVD, from Ar/CH4/N2 gas mixtures with different methane concentrations. Infrared Spectroscopy (IRS and Elastic Recoil Detection Analysis (ERDA have been used for films characterisation and Optical Emission Spectroscopy (OES for plasma analysis. Argon concentration in the gas mixture controls the growth rate as well as the composition of the film. In the proposed model, argon plays a key role in the activation of methane molecules. Also, during the growth of the film, two processes may be considered: i Film formation and ii Etching of the growing surface. Changing the gas mixture composition affects both processes, which results in films with different composition and structure as well as different deposition rates.Se ha estudiado el efecto del argon durante el proceso de CVD asistido por un plasma ECR para la síntesis de películas de nitruro de carbono (CNxHy a partir de mezclas gaseosas Ar/CH4/N2 con diferente contenido de metano. Las películas depositadas han sido analizadas mediante espectroscopía infrarroja (IRS y ERDA (Elastic Recoil Detection Analysis, y el análisis del plasma ha sido realizado utilizando la técnica de espectroscopía de emisión óptica (OES. La velocidad de deposición y la composición de las películas depositadas se encuentran determinadas por la concentración de argon en la mezcla gaseosa. Se propone un modelo, según el cual el argon juega un papel fundamental como activador de las moléculas de metano. El modelo propuesto incluye dos procesos simultáneos durante el crecimiento de las capas : i formación de la capa y ii ataque de la superficie de crecimiento. Según la composición de la mezcla gaseosa se favorece uno u otro proceso, lo que conduce a velocidades de deposición diferentes así como a depósitos con diferente composición y estructura atómica.

  9. Plasma technology in metallurgical processing

    Energy Technology Data Exchange (ETDEWEB)

    Haile, O.

    1995-12-31

    This literature work is mainly focusing on the mechanisms of plasma technology and telling about metallurgical processing, particularly iron and steelmaking as well as the advantage of the unique properties of plasma. The main advantages of plasma technology in metallurgical operations is to direct utilization of naturally available raw materials and fuels without costly upgrading andlor beneficiation, improved environmental impact, improve process control, significant amplification of reactor and process equipment utilization and increased efficiency of raw materials, energy and man power. This literature survey is based on the publication `plasma technology in metallurgical processing` presents a comprehensive account of the physical, electrical, and mechanical aspects of plasma production and practical processing. The applications of plasma technology in metallurgical processing are covered in depth with special emphasis on developments in promising early stages. Plasma technology of today is mature in the metallurgical process applications. A few dramatic improvements are expected in the near future this giving an impetus to the technologists for the long range planning. (18 refs.) (author)

  10. Turbostratic stacked CVD graphene for high-performance devices

    Science.gov (United States)

    Uemura, Kohei; Ikuta, Takashi; Maehashi, Kenzo

    2018-03-01

    We have fabricated turbostratic stacked graphene with high-transport properties by the repeated transfer of CVD monolayer graphene. The turbostratic stacked CVD graphene exhibited higher carrier mobility and conductivity than CVD monolayer graphene. The electron mobility for the three-layer turbostratic stacked CVD graphene surpassed 10,000 cm2 V-1 s-1 at room temperature, which is five times greater than that for CVD monolayer graphene. The results indicate that the high performance is derived from maintenance of the linear band dispersion, suppression of the carrier scattering, and parallel conduction. Therefore, turbostratic stacked CVD graphene is a superior material for high-performance devices.

  11. Study of plasma-material surface interaction using langmuir probe technique during plasma treatment

    International Nuclear Information System (INIS)

    Saloum, S.; Akel, M.

    2012-01-01

    In this study, we tried to understand the plasma-surface interactions by using Langmuir probes. Two different types of plasmas were studied, the first is the electropositive plasma in Argon and the second is the electronegative plasma in Sulfur Hexafluoride. In the first type, the effects of Argon gas pressure, the injection of Helium in the remote zone and the substrate bias on the measurements of the Electron Energy Probability Function (EEPF) and on the plasma parameters (electron density (n e ), effective electron temperature (T e ff), plasma potential (V p ) and floating potential (V f )) have been investigated. The obtained EEPFs and plasma parameters have been used to control two remote plasma processes. The first is the remote Plasma Enhanced Chemical Vapor Deposition (PE-CVD) of thin films, on silicon wafers, from Hexamethyldisiloxane (HMDSO) precursor diluted in the remote Ar-He plasma. The second is the pure Argon remote plasma treatment of polymethylmethacrylate (PMMA) polymer surface. In the second type, the plasma diagnostics were performed in the remote zone as a function of SF 6 flow rate, where relative concentrations of fluorine atoms were measured using actinometry optical emission spectroscopy; electron density, electron temperature and plasma potential were determined using single cylindrical Langmuir probe, positive ion flux and negative ion fraction were determined using an planar probe. The silicon etching process in SF 6 plasma was studied. (author)

  12. Study of plasma-material surface interaction using Langmuir probe technique during plasma treatment

    International Nuclear Information System (INIS)

    Saloum, S.; Akel, M.

    2009-06-01

    In this study, we tried to understand the plasma-surface interactions by using Langmuir probes. Two different types of plasmas were studied, the first is the electropositive plasma in Argon and the second is the electronegative plasma in Sulfur Hexafluoride. In the first type, the effects of Argon gas pressure, the injection of Helium in the remote zone and the substrate bias on the measurements of the Electron Energy Probability Function (EEPF) and on the plasma parameters (electron density (n e ), effective electron temperature (T e ff), plasma potential (V p ) and floating potential (V f )) have been investigated. The obtained EEPFs and plasma parameters have been used to control two remote plasma processes. The first is the remote Plasma Enhanced Chemical Vapor Deposition (PE-CVD) of thin films, on silicon wafers, from Hexamethyldisoloxane (HMDSO) precursor diluted in the remote Ar-He plasma. The second is the pure Argon remote plasma treatment of polymethylmethacrylate (PMMA) polymer surface. In the second type, the plasma diagnostics were performed in the remote zone as a function of SF 6 flow rate, where relative concentrations of fluorine atoms were measured using actinometry optical emission spectroscopy; electron density, electron temperature and plasma potential were determined using single cylindrical Langmuir probe, positive ion flux and negative ion fraction were determined using an planar probe. The silicon etching process in SF 6 plasma was studied. (author)

  13. Low temperature CVD deposition of silicon carbide

    International Nuclear Information System (INIS)

    Dariel, M.; Yeheskel, J.; Agam, S.; Edelstein, D.; Lebovits, O.; Ron, Y.

    1991-04-01

    The coating of graphite on silicon carbide from the gaseous phase in a hot-well, open flow reactor at 1150degC is described. This study constitutes the first part of an investigation of the process for the coating of nuclear fuel by chemical vapor deposition (CVD)

  14. Development of a CVD silica coating for UK advanced gas-cooled nuclear reactor fuel pins

    International Nuclear Information System (INIS)

    Bennett, M.J.; Houlton, M.R.; Moore, D.A.; Foster, A.I.; Swidzinski, M.A.M.

    1983-04-01

    Vapour deposited silica coatings could extend the life of the 20% Cr/25% Ni niobium stabilised (20/25/Nb) stainless steel fuel cladding of the UK advanced gas cooled reactors. A CVD coating process developed originally to be undertaken at atmospheric pressure has now been adapted for operation at reduced pressure. Trials on the LP CVD process have been pursued to the production scale using commercial equipment. The effectiveness of the LP CVD silica coatings in providing protection to 20/25/Nb steel surfaces against oxidation and carbonaceous deposition has been evaluated. (author)

  15. Processed red meat contribution to dietary patterns and the associated cardio-metabolic outcomes.

    Science.gov (United States)

    Lenighan, Yvonne M; Nugent, Anne P; Li, Kaifeng F; Brennan, Lorraine; Walton, Janette; Flynn, Albert; Roche, Helen M; McNulty, Breige A

    2017-08-01

    Evidence suggests that processed red meat consumption is a risk factor for CVD and type 2 diabetes (T2D). This analysis investigates the association between dietary patterns, their processed red meat contributions, and association with blood biomarkers of CVD and T2D, in 786 Irish adults (18-90 years) using cross-sectional data from a 2011 national food consumption survey. All meat-containing foods consumed were assigned to four food groups (n 502) on the basis of whether they contained red or white meat and whether they were processed or unprocessed. The remaining foods (n 2050) were assigned to twenty-nine food groups. Two-step and k-means cluster analyses were applied to derive dietary patterns. Nutrient intakes, plasma fatty acids and biomarkers of CVD and T2D were assessed. A total of four dietary patterns were derived. In comparison with the pattern with lower contributions from processed red meat, the dietary pattern with greater processed red meat intakes presented a poorer Alternate Healthy Eating Index (21·2 (sd 7·7)), a greater proportion of smokers (29 %) and lower plasma EPA (1·34 (sd 0·72) %) and DHA (2·21 (sd 0·84) %) levels (Pprocessed red meat consumption as a risk factor for CVD and T2D may need to be re-assessed.

  16. Oscillatory processes in plasma

    International Nuclear Information System (INIS)

    Gallin, E.

    1980-01-01

    The oscillatory process play an important part in plasma evolution, In hot plasma in particular, the interactions between the oscillation modes are preponderant in relation to the binary collisions between particles. The nonlineary interactions between collective plasma oscillations can generate, in this case, a non-balanced steady state of plasma (steady turbulence). The paper elucidates some aspects of the oscillatory phenomena which contribute to the plasma state evolution, especially of hot plasma. A major part of the paper is devoted to the study of parametric instabilities in plasma and their role in increasing the temperature of plasma components (electrons, ions). Both parametric instabilities in plasma in the vicinity of thermodynamic balance and parametric processes is steady turbulent plasma are analysed - in relation to additional heating of hot plasma. An important result of the thesis refers to the drowing-up of a non-lineary interaction model between the oscillation modes in turbulent plasma, being responsible for the electromagnetic radiation in hot plasma. On the basis of the model suggested in the paper the existence of a low frequency radiative mode in hot plasma in a turbulent state, can be demonstrated. Its frequency could be even lower than plasma frequency in the field of long waves be even lower than plasma frequency in the field of long waves. Such a radiative mode was detected experimentally in focussed plasma installations. (author)

  17. Plasma processing: Technologies and applications

    International Nuclear Information System (INIS)

    Naddaf, M.; Saloum, S.

    2005-01-01

    This study aims to present the fundamentals of physics of plasmas, methods of generation, diagnostics, and applications for processing of materials. The first chapter defines plasma in general as well as its main parameters, the most important differential equations in plasma physics, and classifies the types of plasmas. the various methods and techniques to create and sustain plasma are presented in the second chapter. Chapter 3 focuses on plasma diagnostic methods and tools. While chapter 4 deals with applications of plasma processing such as; surface modification of materials, plasma ashing and etching, plasma cutting, and the environmental applications of plasma. Plasma polymerization and its various applications have been presented in more details in the last chapter. (Author)

  18. Immobilization of glucoamylase on ceramic membrane surfaces modified with a new method of treatment utilizing SPCP-CVD.

    Science.gov (United States)

    Ida; Matsuyama; Yamamoto

    2000-07-01

    Glucoamylase, as a model enzyme, was immobilized on a ceramic membrane modified by surface corona discharge induced plasma chemical process-chemical vapor deposition (SPCP-CVD). Characterizations of the immobilized enzyme were then discussed. Three kinds of ceramic membranes with different amounts of amino groups on the surface were prepared utilizing the SPCP-CVD method. Each with 1-time, 3-times and 5-times surface modification treatments and used for supports in glucoamylase immobilization. The amount of immobilized glucoamylase increased with the increase in the number of surface modification treatments and saturated to a certain maximum value estimated by a two-dimensional random packing. The operational stability of the immobilized glucoamylase also increased with the increase in the number of the surface treatment. It was almost the same as the conventional method, while the activity of immobilized enzyme was higher. The results indicated the possibility of designing the performance of the immobilized enzyme by controlling the amount of amino groups. The above results showed that the completely new surface modification method using SPCP was effective in modifying ceramic membranes for enzyme immobilization.

  19. Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation

    Science.gov (United States)

    Lu, Yimin; Makihara, Katsunori; Takeuchi, Daichi; Ikeda, Mitsuhisa; Ohta, Akio; Miyazaki, Seiichi

    2017-06-01

    Hydrogenated microcrystalline (µc) Si/Ge heterostructures were prepared on quartz substrates by plasma-enhanced chemical vapor deposition (CVD) from VHF inductively coupled plasma of SiH4 just after GeH4 employing Ni nanodots (NDs) as seeds for crystalline nucleation. The crystallinity of the films and the progress of grain growth were characterized by Raman scattering spectroscopy and atomic force microscopy (AFM), respectively. When the Ge films were grown on Ni-NDs at 250 °C, the growth of µc-Ge films with crystallinity as high as 80% was realized without an amorphous phase near the Ge film/quartz substrate interface. After the subsequent Si film deposition at 250 °C, fine grains were formed in the early stages of film growth on µc-Ge films with compositional mixing (µc-Si0.85Ge0.15:H) caused by the release of large lattice mismatch between c-Si and c-Ge. With further increase in Si:H film thickness, the formation of large grain structures accompanied by fine grains was promoted. These results suggest that crystalline Si/Ge heterojunctions can be used for efficient carrier collection in solar cell application.

  20. Collisional processes in supersymmetric plasma

    International Nuclear Information System (INIS)

    Czajka, Alina; Mrowczynski, Stanislaw

    2011-01-01

    Collisional processes in ultrarelativistic N=1 supersymmetric QED plasma are studied and compared to those in an electromagnetic plasma of electrons, positrons and photons. Cross sections of all binary interactions which occur in the supersymmetric plasma at the order of e 4 are computed. Some processes, in particular, the Compton scattering on selectrons, appear to be independent of momentum transfer and thus they are qualitatively different from processes in an electromagnetic plasma. It suggests that the transport properties of the supersymmetric plasma are different than those of its nonsupersymmetric counterpart. Energy loss and momentum broadening of a particle traversing the supersymmetric plasma are discussed in detail and the characteristics are shown to be surprisingly similar to those of QED plasma.

  1. CVD diamond windows for infrared synchrotron applications

    International Nuclear Information System (INIS)

    Sussmann, R.S.; Pickles, C.S.J.; Brandon, J.R.; Wort, C.J.H.; Coe, S.E.; Wasenczuk, A.; Dodge, C.N.; Beale, A.C.; Krehan, A.J.; Dore, P.; Nucara, A.; Calvani, P.

    1998-01-01

    This paper describes the attributes that make diamond a unique material for infrared synchrotron beam experiments. New developments in diamond synthesised by Chemical Vapour Deposition (CVD) promise to extend the range of applications which have been hitherto limited by the availability and cost of large-size single-crystal diamond. Polycrystalline CVD diamond components such as large (100 mm) diameter windows with extremely good transparency over a wide spectral range are now commercially available. Properties of CVD diamond of relevance to optical applications, such as mechanical strength, thermal conductivity and absolute bulk absorption, are discussed. It is shown that although some of the properties of CVD diamond (similar to other polycrystalline industrial ceramics) are affected by the grain structure, currently produced CVD diamond optical components have the quality and performance required for numerous demanding applications

  2. Enhanced graphitization of c-CVD grown multi-wall carbon nanotube arrays assisted by removal of encapsulated iron-based phases under thermal treatment in argon

    International Nuclear Information System (INIS)

    Boncel, Slawomir; Koziol, Krzysztof K.K.

    2014-01-01

    Graphical abstract: - Highlights: • Annealing of the c-CVD MWCNT arrays toward complete removal of iron nanoparticles. • The ICP-AES protocol established for quantitative analysis of Fe-content in MWCNTs. • The vertical alignment from the as-grown MWCNT arrays found intact after annealing. • A route to decrease number of defects/imperfections in the MWCNT graphene walls. • A foundation for commercial purification of c-CVD derived MWCNTs. - Abstract: The effect of annealing on multi-walled carbon nanotube (MWCNT) arrays grown via catalytic Chemical Vapour Deposition (c-CVD) was studied. The treatment enabled to decrease number of defects/imperfections in the graphene walls of MWCNTs’, which was reflected in Raman spectroscopy by reduction of the I D /I G ratio by 27%. Moreover, the vertical alignment from the as-synthesized nanotube arrays was found intact after annealing. Not only graphitization of the nanotube walls occurred under annealing, but the amount of metal iron-based catalyst residues (interfering with numerous physicochemical properties, and hence applications of MWCNTs) was reduced from 9.00 wt.% (for pristine MWCNTs) to 0.02 wt.% as detected by Inductively Coupled Plasma Atomic Emission Spectroscopy (ICP-AES). This value, established by a new analytical protocol, is the lowest recorded by now for purified c-CVD MWCNTs and, due to operating under atmospheric pressure, medium temperature regime (as for annealing processes), reasonable time-scale and metal residue non-specificity, it could lay the foundation for commercial purification of c-CVD derived MWCNTs

  3. The effects of varying plasma parameters on silicon thin film growth by ECR plasma CVD

    International Nuclear Information System (INIS)

    Summers, S.; Reehal, H.S.; Shirkoohi, G.H.

    2001-01-01

    The technique of electron cyclotron resonance (ECR) plasma enhanced chemical vapour deposition (PECVD) is increasingly being used in electronic and photonic device applications. ECR offers a number of advantages including improved control of the deposition process, less damage to the growing film and the possibility of high deposition rates. ECR occurs in a plasma under appropriate magnetic and electric field conditions. In most cases, as in our system, this is achieved with a combination of 2.45 GHz microwave radiation and a 0.0875 T magnetic field, due to the use of standardized microwave supplies. We have studied the effects on silicon film growth of changing the magnetic field configuration to produce one or more planes of ECR within the system, and of changing the positions of the plane(s) relative to the deposition substrate. The films were grown in silane-hydrogen discharges. The magnetic field in our system was provided by two electromagnets. It was measured experimentally for a number of operating current values and then a detailed profile achieved by modelling using a proprietary software package. A process condition discharge under identical magnetic field configurations to growth was analysed by the use of a Langmuir probe and the results correlated with film properties determined by Raman spectroscopy and Dektak profilometry. (author)

  4. CVD diamond for nuclear detection applications

    International Nuclear Information System (INIS)

    Bergonzo, P.; Brambilla, A.; Tromson, D.; Mer, C.; Guizard, B.; Marshall, R.D.; Foulon, F.

    2002-01-01

    Chemically vapour deposited (CVD) diamond is a remarkable material for the fabrication of radiation detectors. In fact, there exist several applications where other standard semiconductor detectors do not fulfil the specific requirements imposed by corrosive, hot and/or high radiation dose environments. The improvement of the electronic properties of CVD diamond has been under intensive investigations and led to the development of a few applications that are addressing specific industrial needs. Here, we report on CVD diamond-based detector developments and we describe how this material, even though of a polycrystalline nature, is readily of great interest for applications in the nuclear industry as well as for physics experiments. Improvements in the material synthesis as well as on device fabrication especially concern the synthesis of films that do not exhibit space charge build up effects which are often encountered in CVD diamond materials and that are highly detrimental for detection devices. On a pre-industrial basis, CVD diamond detectors have been fabricated for nuclear industry applications in hostile environments. Such devices can operate in harsh environments and overcome limitations encountered with the standard semiconductor materials. Of these, this paper presents devices for the monitoring of the alpha activity in corrosive nuclear waste solutions, such as those encountered in nuclear fuel assembly reprocessing facilities, as well as diamond-based thermal neutron detectors exhibiting a high neutron to gamma selectivity. All these demonstrate the effectiveness of a demanding industrial need that relies on the remarkable resilience of CVD diamond

  5. A secondary fuel removal process: plasma processing

    Energy Technology Data Exchange (ETDEWEB)

    Min, J Y; Kim, Y S [Hanyang Univ., Seoul (Korea, Republic of); Bae, K K; Yang, M S [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    1997-07-01

    Plasma etching process of UO{sub 2} by using fluorine containing gas plasma is studied as a secondary fuel removal process for DUPIC (Direct Use of PWR spent fuel Into Candu) process which is taken into consideration for potential future fuel cycle in Korea. CF{sub 4}/O{sub 2} gas mixture is chosen for reactant gas and the etching rates of UO{sub 2} by the gas plasma are investigated as functions of CF{sub 4}/O{sub 2} ratio, plasma power, substrate temperature, and plasma gas pressure. It is found that the optimum CF{sub 4}/O{sub 2} ratio is around 4:1 at all temperatures up to 400 deg C and the etching rate increases with increasing r.f. power and substrate temperature. Under 150W r.f. power the etching rate reaches 1100 monolayers/min at 400 deg C, which is equivalent to about 0.5mm/min. (author).

  6. The plasma physics of plasma processing

    International Nuclear Information System (INIS)

    Shohet, L.

    1991-01-01

    Plasma processing is used for producing new materials with unusual and superior properties, for developing new chemical compounds and processes, for machining, and for altering and refining materials and surfaces. It has direct applications to semiconductor fabrication, materials synthesis, welding, lighting, polymers, anti-corrosion coatings, machine tools, metallurgy, electrical and electronics devices, hazardous waste removal, high performance ceramics, and many other items in both high-technology and the more traditional industries. Plasma processing takes on a wide variety of apparently different forms in industry, but the techniques share many common characteristics and problems. Control of the generation and flux of ions, electrons and free radicals in the plasma and their incidence on a surface is vital. Diagnostics, sensors, modeling techniques, and associated statistical methods are needed. However, without an in-depth understanding of the variety of phenomena taking place and their application to the industrial environment, advances in this technology, and its efficient use, will occur at a diminishing rate

  7. Diets high in resistant starch increase plasma levels of trimethylamine-N-oxide, a gut microbiome metabolite associated with CVD risk

    Energy Technology Data Exchange (ETDEWEB)

    Bergeron, Nathalie; Williams, Paul T.; Lamendella, Regina; Faghihnia, Nastaran; Grube, Alyssa; Li, Xinmin; Wang, Zeneng; Knight, Rob; Jansson, Janet K.; Hazen, Stanley L.; Krauss, Ronald M.

    2016-12-20

    Production of trimethylamine-N-oxide (TMAO), a biomarker of CVD risk, is dependent on intestinal microbiota, but little is known of dietary conditions promoting changes in gut microbial communities. Resistant starches (RS) alter the human microbiota. We sought to determine whether diets varying in RS and carbohydrate (CHO) content affect plasma TMAO levels. We also assessed postprandial glucose and insulin responses and plasma lipid changes to diets high and low in RS. In a cross-over trial, fifty-two men and women consumed a 2-week baseline diet (41 percentage of energy (%E) CHO, 40 % fat, 19 % protein), followed by 2-week high- and low-RS diets separated by 2-week washouts. RS diets were assigned at random within the context of higher (51–53 %E)v. lower CHO (39–40 %E) intake. Measurements were obtained in the fasting state and, for glucose and insulin, during a meal test matching the composition of the assigned diet. With lower CHO intake, plasma TMAO, carnitine, betaine andγ-butyrobetaine concentrations were higher after the high-v. low-RS diet (P<0·01 each). These metabolites were not differentially affected by highv. low RS when CHO intake was high. Although the high-RS meal reduced postprandial insulin and glucose responses when CHO intake was low (P<0·01 each), RS did not affect fasting lipids, lipoproteins, glucose or insulin irrespective of dietary CHO content. In conclusion, a lower-CHO diet high in RS was associated with higher plasma TMAO levels. These findings, together with the absence of change in fasting lipids, suggest that short-term high-RS diets do not improve markers of cardiometabolic health.

  8. Cold Vacuum Dryer (CVD) Facility Fire Protection System Design Description (SYS 24)

    Energy Technology Data Exchange (ETDEWEB)

    SINGH, G.

    2000-10-17

    This system design description (SDD) addresses the Cold Vacuum Drying (CVD) Facility fire protection system (FPS). The primary features of the FPS for the CVD are a fire alarm and detection system, automatic sprinklers, and fire hydrants. The FPS also includes fire extinguishers located throughout the facility and fire hydrants to assist in manual firefighting efforts. In addition, a fire barrier separates the operations support (administrative) area from the process bays and process bay support areas. Administrative controls to limit combustible materials have been established and are a part of the overall fire protection program. The FPS is augmented by assistance from the Hanford Fire Department (HED) and by interface systems including service water, electrical power, drains, instrumentation and controls. This SDD, when used in conjunction with the other elements of the definitive design package, provides a complete picture of the FPS for the CVD Facility.

  9. Plasma processing and chemistry

    NARCIS (Netherlands)

    Schram, D.C.; Mullen, van der J.J.A.M.; Sanden, van de M.C.M.

    1994-01-01

    The growing field of applications of plasma as deposition, etching, surface modification and chemical conversion has stimulated a renewed interest in plasma science in the atomic physical chemistry regime. The necessity to optimize the various plasma processing techniques in terms of rates, and

  10. Rapid growth of single-layer graphene on the insulating substrates by thermal CVD

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C.Y. [Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China); Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Dai, D.; Chen, G.X.; Yu, J.H. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Nishimura, K. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Advanced Nano-processing Engineering Lab, Mechanical Systems Engineering, Kogakuin University (Japan); Lin, C.-T. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Jiang, N., E-mail: jiangnan@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zhan, Z.L., E-mail: zl_zhan@sohu.com [Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

    2015-08-15

    Highlights: • A rapid thermal CVD process has been developed to directly grow graphene on the insulating substrates. • The treating time consumed is ≈25% compared to conventional CVD procedure. • Single-layer and few-layer graphene can be formed on quartz and SiO{sub 2}/Si substrates, respectively. • The formation of thinner graphene at the interface is due to the fast precipitation rate of carbon atoms during cooling. - Abstract: The advance of CVD technique to directly grow graphene on the insulating substrates is particularly significant for further device fabrication. As graphene is catalytically grown on metal foils, the degradation of the sample properties is unavoidable during transfer of graphene on the dielectric layer. Moreover, shortening the treatment time as possible, while achieving single-layer growth of graphene, is worthy to be investigated for promoting the efficiency of mass production. Here we performed a rapid heating/cooling process to grow graphene films directly on the insulating substrates by thermal CVD. The treating time consumed is ≈25% compared to conventional CVD procedure. In addition, we found that high-quality, single-layer graphene can be formed on quartz, but on SiO{sub 2}/Si substrate only few-layer graphene can be obtained. The pronounced substrate effect is attributed to the different dewetting behavior of Ni films on the both substrates at 950 °C.

  11. Fermented dairy food and CVD risk.

    Science.gov (United States)

    Tapsell, Linda C

    2015-04-01

    Fermented dairy foods such as yoghurt and cheese are commonly found in the Mediterranean diet. Recent landmark research has confirmed the effect of the Mediterranean diet on reducing the CVD risk, but the relative contributions of fermented dairy foods have not been fully articulated. The present study provides a review of the relationship between fermented dairy foods consumption and CVD risk in the context of the whole diet. Studies show that people who eat healthier diets may be more likely to consume yoghurt, so there is a challenge in attributing separate effects to yoghurt. Analyses from large population studies list yoghurt as the food most negatively associated with the risk of weight gain (a problem that may lead to CVD). There is some suggestion that fermented dairy foods consumption (yoghurt or cheese) may be associated with reduced inflammatory biomarkers associated with the development of CVD. Dietary trials suggest that cheese may not have the same effect on raising LDL-cholesterol levels as butter with the same saturated fat content. The same might be stated for yoghurt. The use of different probiotic cultures and other aspects of study design remain a problem for research. Nevertheless, population studies from a range of countries have shown that a reduced risk of CVD occurs with the consumption of fermented dairy foods. A combination of evidence is necessary, and more research is always valuable, but indications remain that fermented dairy foods such as cheese and yoghurt are integral to diets that are protective against CVD.

  12. Report of the results of the fiscal 1997 regional consortium R and D project. Regional consortium energy field / Development of the plasma use surface treatment process by in-situ control (first fiscal year); 1997 nendo chiiki consortium kenkyu kaihatsu jigyo. Chiiki consortium energy bun`ya / in-situ seigyo ni yoru plasma riyo hyohi shori process no kaihatsu (daiichi nendo) seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    The paper described the fiscal 1997 result of the development. To know of in-plasma phenomena such as carburization and nitriding, a basic plasma experimental device was fabricated for quantitative measurement of reaction activity species. For the study of reaction control between plasma and substrate, a rotary analyzer type ellipsometer was fabricated as a method to detect composition and thickness of the deposit on the substrate surface. For He gas cooling after carburization and hardening, basic specifications for He gas refining/circulating system were confirmed. For perfect non-hazardous processing of exhaust gas from plasma carburization furnace, conducted was the thermodynamic computation of the process. Priority in order of the functions to be possessed as specifications for basic design of mini plant is plasma carburization, He gas cooling, and in-situ measurement. To make the most of the plasma use surface treatment as substitutes for expensive alloy elements, sliding parts/die-cast mold raw materials were carburized to measure the hardness. The Cr carbide coating technology by plasma CVD is also under study as an application example except carburization. 47 refs., 59 figs., 31 tabs.

  13. Deposition of silicon oxynitride at room temperature by Inductively Coupled Plasma-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Zambom, Luis da Silva [MPCE-Faculdade de Tecnologia de Sao Paulo - CEETEPS, Pca Coronel Fernando Prestes, 30, Sao Paulo - CEP 01124-060 (Brazil)]. E-mail: zambom@lsi.usp.br; Verdonck, Patrick [PSI-LSI-Escola Politecnica da Universidade de Sao Paulo (Brazil)]. E-mail: patrick@lsi.usp.br

    2006-10-25

    Oxynitride thin films are used in important optical applications and as gate dielectric for MOS devices. Their traditional deposition processes have the drawbacks that high temperatures are needed, high mechanical stresses are induced and the deposition rate is low. Plasma assisted processes may alleviate these problems. In this study, oxynitride films were deposited at room temperature through the chemical reaction of silane, nitrogen and nitrous oxide (N{sub 2}O), in a conventional LPCVD furnace, which was modified into a high density Inductively Coupled Plasma (ICP) reactor. Deposition rates increased with applied coil power and were never lower than 10 nm/min, quite high for room temperature depositions. The films' refractive indexes and FTIR spectra indicate that for processes with low N{sub 2}O gas concentrations, when mixed together with N{sub 2} and SiH{sub 4}, nitrogen was incorporated in the film. This incorporation increased the resistivity, which was up to 70 G{omega} cm, increased the refractive index, from approximately 1.47 to approximately 1.50, and decreased the dielectric constant of these films, which varied in the 4-14 range. These characteristics are adequate for electric applications e.g. for TFT fabrication on glass or polymers which can not stand high temperature steps.

  14. CVD diamond for nuclear detection applications

    CERN Document Server

    Bergonzo, P; Tromson, D; Mer, C; Guizard, B; Marshall, R D; Foulon, F

    2002-01-01

    Chemically vapour deposited (CVD) diamond is a remarkable material for the fabrication of radiation detectors. In fact, there exist several applications where other standard semiconductor detectors do not fulfil the specific requirements imposed by corrosive, hot and/or high radiation dose environments. The improvement of the electronic properties of CVD diamond has been under intensive investigations and led to the development of a few applications that are addressing specific industrial needs. Here, we report on CVD diamond-based detector developments and we describe how this material, even though of a polycrystalline nature, is readily of great interest for applications in the nuclear industry as well as for physics experiments. Improvements in the material synthesis as well as on device fabrication especially concern the synthesis of films that do not exhibit space charge build up effects which are often encountered in CVD diamond materials and that are highly detrimental for detection devices. On a pre-i...

  15. Effect of pulse biasing on the morphology of diamond films grown by hot filament CVD

    International Nuclear Information System (INIS)

    Beake, B.D.; Hussain, I.U.; Rego, C.; Ahmed, W.

    1999-01-01

    There has been considerable interest in the chemical vapour deposition (CVD) of diamond due to its unique mechanical, optical and electronic properties, which make it useful for many applications. For use in optical and electronic applications further developments in the CVD process are required to control the surface morphology and crystal size of the diamond films. These will require a detailed understanding of both the nucleation and growth processes that effect the properties. The technique of bias enhanced nucleation (BEN) of diamond offers better reproducibility than conventional pre-treatment methods such as mechanical abrasion. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) have been used study the surface modification of diamond films on silicon substrates during pulse biased growth in a hot filament CVD reactor. Pre-abraded silicon substrates were subjected to a three-step sequential growth process: (i) diamond deposition under standard CVD conditions, (ii) bias pre-treatment and (iii) deposition under standard conditions. The results show that the bias pre-treatment time is a critical parameter controlling the surface morphology and roughness of the diamond films deposited. Biasing reduces the surface roughness from 152 nm for standard CVD diamond to 68 nm for the 2.5 minutes pulse biased film. Further increase in the bias time results in an increase in surface roughness and crystallite size. (author)

  16. Enhanced graphitization of c-CVD grown multi-wall carbon nanotube arrays assisted by removal of encapsulated iron-based phases under thermal treatment in argon

    Energy Technology Data Exchange (ETDEWEB)

    Boncel, Slawomir, E-mail: slawomir.boncel@polsl.pl [Department of Organic Chemistry, Biochemistry and Biotechnology, Silesian University of Technology, Krzywoustego 4, 44-100 Gliwice (Poland); Koziol, Krzysztof K.K., E-mail: kk292@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, CB3 0FS Cambridge (United Kingdom)

    2014-05-01

    Graphical abstract: - Highlights: • Annealing of the c-CVD MWCNT arrays toward complete removal of iron nanoparticles. • The ICP-AES protocol established for quantitative analysis of Fe-content in MWCNTs. • The vertical alignment from the as-grown MWCNT arrays found intact after annealing. • A route to decrease number of defects/imperfections in the MWCNT graphene walls. • A foundation for commercial purification of c-CVD derived MWCNTs. - Abstract: The effect of annealing on multi-walled carbon nanotube (MWCNT) arrays grown via catalytic Chemical Vapour Deposition (c-CVD) was studied. The treatment enabled to decrease number of defects/imperfections in the graphene walls of MWCNTs’, which was reflected in Raman spectroscopy by reduction of the I{sub D}/I{sub G} ratio by 27%. Moreover, the vertical alignment from the as-synthesized nanotube arrays was found intact after annealing. Not only graphitization of the nanotube walls occurred under annealing, but the amount of metal iron-based catalyst residues (interfering with numerous physicochemical properties, and hence applications of MWCNTs) was reduced from 9.00 wt.% (for pristine MWCNTs) to 0.02 wt.% as detected by Inductively Coupled Plasma Atomic Emission Spectroscopy (ICP-AES). This value, established by a new analytical protocol, is the lowest recorded by now for purified c-CVD MWCNTs and, due to operating under atmospheric pressure, medium temperature regime (as for annealing processes), reasonable time-scale and metal residue non-specificity, it could lay the foundation for commercial purification of c-CVD derived MWCNTs.

  17. Plasma processing of nanomaterials

    CERN Document Server

    Sankaran, R Mohan

    2014-01-01

    CRC Press author R. Mohan Sankaran is the winner of the 2011 Peter Mark Memorial Award "… for the development of a tandem plasma synthesis method to grow carbon nanotubes with unprecedented control over the nanotube properties and chirality." -2011 AVS Awards Committee"Readers who want to learn about how nanomaterials are processed, using the most recent methods, will benefit greatly from this book. It contains very recent technical details on plasma processing and synthesis methods used by current researchers developing new nano-based materials, with all the major plasma-based processing techniques used today being thoroughly discussed."-John J. Shea, IEEE Electrical Insulation Magazine, May/June 2013, Vol. 29, No. 3.

  18. Delaminated Transfer of CVD Graphene

    Science.gov (United States)

    Clavijo, Alexis; Mao, Jinhai; Tilak, Nikhil; Altvater, Michael; Andrei, Eva

    Single layer graphene is commonly synthesized by dissociation of a carbonaceous gas at high temperatures in the presence of a metallic catalyst in a process known as Chemical Vapor Deposition or CVD. Although it is possible to achieve high quality graphene by CVD, the standard transfer technique of etching away the metallic catalyst is wasteful and jeopardizes the quality of the graphene film by contamination from etchants. Thus, development of a clean transfer technique and preservation of the parent substrate remain prominent hurdles to overcome. In this study, we employ a copper pretreatment technique and optimized parameters for growth of high quality single layer graphene at atmospheric pressure. We address the transfer challenge by utilizing the adhesive properties between a polymer film and graphene to achieve etchant-free transfer of graphene films from a copper substrate. Based on this concept we developed a technique for dry delamination and transferring of graphene to hexagonal boron nitride substrates, which produced high quality graphene films while at the same time preserving the integrity of the copper catalyst for reuse. DOE-FG02-99ER45742, Ronald E. McNair Postbaccalaureate Achievement Program.

  19. Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Byung Hyuk; Kim, Chan Joong

    2006-05-15

    Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

  20. Anticorrosive coating of SixOyCz on metallic substrates applied with the plasma CVD technique

    International Nuclear Information System (INIS)

    Perillo, P; Lasorsa, C; Versaci, R

    2006-01-01

    This work deals with the production of anticorrosive coatings of Si x O y C z on metallic substrates by PECVD (Plasma Enhanced Chemical Vapor Deposition) in a two layer coating, with a gaseous mixture using methyltrimethoxysilane (Z6070) with the contribution of O 2 and methane as reactive gases. The process involves two steps, the first with the substrate thermalized to 500 o C and the second step with the substrate at room temperature. In the first step the process is carried out with the mixture of O 2 and Z6070, in the second step methane is added to the mixture of the plasma forming gases. The coatings were carried out on AISI 410 stainless steel, AISI M2 steel, titanium and AA6061 aluminum substrates. This work presents the preliminary results of the electrochemical evaluation and the mechanical properties of the coating. Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS/ESCA ), and scanning electron microscopy were used for this study. Electrochemical techniques were used to study the reaction to the corrosion of the coatings. Potentiodynamic polarization curves were prepared in a solution of 5% H 2 SO 4 and in NaCl 0,1M. The tests were undertaken at room temperature. This process is presented as an alternative to the conventional immersion processes by the sol-gel method, which produces the polymerization of the reagent as a result of the effect of the oxygen from the environment, while the plasma process produces very different chemical reactions in the center of the plasma itself with coatings also different (CW)

  1. Application of CVD diamond film for radiation detection

    International Nuclear Information System (INIS)

    Zhou Haiyang; Zhu Xiaodong; Zhan Rujuan

    2005-01-01

    With the development of diamond synthesis at low pressure, the CVD diamond properties including electronic characteristics have improved continuously. Now the fabrication of electronic devices based on the CVD diamond has been one of hot research subjects in this field. Due to many unique advantages, such as high signal-noise ratio, fast time response, and normal output in extremely harsh surrounding, the CVD diamond radiation detector has attracted more and more interest. In this paper, we have reviewed the development and status of the CVD diamond radiation detector. The prospect of this detector is described. (authors)

  2. High quality aluminide and thermal barrier coatings deposition for new and service exposed parts by CVD techniques

    Energy Technology Data Exchange (ETDEWEB)

    Pedraza, F.; Tuohy, C.; Whelan, L.; Kennedy, A.D. [SIFCO Turbine Components, Carrigtwohill, Cork (Ireland)

    2004-07-01

    In this work, the performance of CVD aluminide coatings is compared to that of coatings deposited by the classical pack cementation technique using standard SIFCO procedures. The CVD coatings always seem to behave better upon exposure to isothermal and cyclic oxidation conditions. This is explained by a longer term stability of CVD coatings, with higher Al amounts in the diffusion zone and less refractory element precipitation in the additive layer. The qualities of Pt/Al coatings by out-of-pack and CVD are also compared as a previous step for further thermal barrier coating deposition. As an example, YSZ thermal barrier coatings are deposited by MO-CVD on Pt/Al CVD bond coats rendering adherent and thick coatings around the surface of turbine blades. This process under development does not require complex manipulation of the component to be coated. (orig.)

  3. Kinetic and radiation processes in cluster plasmas

    International Nuclear Information System (INIS)

    Smirnov, B.M.

    1996-01-01

    The analysis of processes is made for a cluster plasma which is a xenon arc plasma of a high pressure with an admixture of tungsten cluster ions. Because cluster ions emit radiation, this system is a light source which parameters are determined by various processes such as heat release and transport of charged particles in the plasma, radiative processes involving clusters, processes of cluster evaporation and attachment of atoms to it that leads to an equilibrium between clusters and vapor of their atoms, processes of cluster generation, processes of the ionization equilibrium between cluster ions and plasma electrons, transport of cluster ions in the discharge plasma in all directions. These processes govern by properties of a specific cluster plasma under consideration. (author)

  4. New developments in CVD diamond for detector applications

    Science.gov (United States)

    Adam, W.; Berdermann, E.; Bergonzo, P.; de Boer, W.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Dulinski, W.; Doroshenko, J.; van Eijk, B.; Fallou, A.; Fischer, P.; Fizzotti, F.; Furetta, C.; Gan, K. K.; Ghodbane, N.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Keil, M.; Knoepfle, K. T.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pernicka, M.; Perera, L.; Potenza, R.; Riester, J. L.; Roe, S.; Rudge, A.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Sutera, C.; Trischuk, W.; Tromson, D.; Tuve, C.; Vincenzo, B.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

    Chemical Vapor Deposition (CVD) diamond has been discussed extensively as an alternative sensor material for use very close to the interaction region of the LHC and other machines where extreme radiation conditions exist. During the last seven years the RD42 collaboration has developed diamond detectors and tested them with LHC electronics towards the end of creating a device usable by experiments. The most recent results of this work are presented. Recently, a new form of CVD diamond has been developed: single crystal CVD diamond which resolves many of the issues associated with poly-crystalline CVD material. The first tests of this material are also presented.

  5. New developments in CVD diamond for detector applications

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W. [HEPHY, Vienna (Austria); Berdermann, E. [GSI, Darmstadt (Germany); Bergonzo, P.; Brambilla, A. [LETI/DEIN/SPE/CEA Saclay (France); Boer, W. de [Universitaet Karlsruhe, Karlsruhe (Germany); Bogani, F. [LENS, Florence (Italy); Borchi, E.; Bruzzi, M. [University of Florence (Italy); Colledani, C.; Dulinski, W. [LEPSI, IN2P3/CNRS-ULP, Strasbourg (France); Conway, J.; Doroshenko, J. [Rutgers University, Piscataway (United States); D' Angelo, P.; Furetta, C. [INFN, Milano (Italy); Dabrowski, W. [UMM, Cracow (Poland); Delpierre, P.; Fallou, A. [CPPM, Marseille (France); Eijk, B. van [NIKHEF, Amsterdam (Netherlands); Fischer, P. [Universitaet Bonn, Bonn (Germany); Fizzotti, F. [University of Torino (Italy); Gan, K.K.; Ghodbane, N.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Keil, M.; Knoepfle, K.T.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pernicka, M.; Perera, L.; Potenza, R.; Riester, J.L.; Roe, S.; Rudge, A.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Sutera, C.; Trischuk, W.; Tromson, D.; Tuve, C.; Vincenzo, B.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

    2004-07-01

    Chemical Vapor Deposition (CVD) diamond has been discussed extensively as an alternative sensor material for use very close to the interaction region of the LHC and other machines where extreme radiation conditions exist. During the last seven years the RD42 collaboration has developed diamond detectors and tested them with LHC electronics towards the end of creating a device usable by experiments. The most recent results of this work are presented. Recently, a new form of CVD diamond has been developed: single crystal CVD diamond which resolves many of the issues associated with poly-crystalline CVD material. The first tests of this material are also presented. (orig.)

  6. New developments in CVD diamond for detector applications

    International Nuclear Information System (INIS)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Brambilla, A.; Boer, W. de; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Dulinski, W.; Conway, J.; Doroshenko, J.; D'Angelo, P.; Furetta, C.; Dabrowski, W.; Delpierre, P.; Fallou, A.; Eijk, B. van; Fischer, P.; Fizzotti, F.; Gan, K.K.; Ghodbane, N.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Keil, M.; Knoepfle, K.T.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pernicka, M.; Perera, L.; Potenza, R.; Riester, J.L.; Roe, S.; Rudge, A.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Sutera, C.; Trischuk, W.; Tromson, D.; Tuve, C.; Vincenzo, B.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

    2004-01-01

    Chemical Vapor Deposition (CVD) diamond has been discussed extensively as an alternative sensor material for use very close to the interaction region of the LHC and other machines where extreme radiation conditions exist. During the last seven years the RD42 collaboration has developed diamond detectors and tested them with LHC electronics towards the end of creating a device usable by experiments. The most recent results of this work are presented. Recently, a new form of CVD diamond has been developed: single crystal CVD diamond which resolves many of the issues associated with poly-crystalline CVD material. The first tests of this material are also presented. (orig.)

  7. Micro-strip sensors based on CVD diamond

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D. E-mail: dirk.meier@cern.ch; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M

    2000-10-11

    In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

  8. Micro-strip sensors based on CVD Diamond

    CERN Document Server

    Adam, W; Bergonzo, P; Bertuccio, G; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Koeth, T W; Krammer, Manfred; Lo Giudice, A; Lü, R; MacLynne, L; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Oh, A; Pan, L S; Pernicka, Manfred; Peitz, A; Perera, L P; Pirollo, S; Procario, M; Riester, J L; Roe, S; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S R; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trischuk, W; Tromson, D; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Wetstein, M; White, C; Zeuner, W; Zoeller, M M

    2000-01-01

    In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

  9. Micro-strip sensors based on CVD diamond

    International Nuclear Information System (INIS)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.

    2000-01-01

    In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation

  10. Micro-strip sensors based on CVD diamond

    Science.gov (United States)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L. S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J. L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; RD42 Collaboration

    2000-10-01

    In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

  11. Crystal growth of CVD diamond and some of its peculiarities

    CERN Document Server

    Piekarczyk, W

    1999-01-01

    Experiments demonstrate that CVD diamond can form in gas environments that are carbon undersaturated with respect to diamond. This fact is, among others, the most serious violation of principles of chemical thermodynamics. In this $9 paper it is shown that none of the principles is broken when CVD diamond formation is considered not a physical process consisting in growth of crystals but a chemical process consisting in accretion of macro-molecules of polycyclic $9 saturated hydrocarbons belonging to the family of organic compounds the smallest representatives of which are adamantane, diamantane, triamantane and so forth. Since the polymantane macro-molecules are in every respect identical with $9 diamond single crystals with hydrogen-terminated surfaces, the accretion of polymantane macro- molecules is a process completely equivalent to the growth of diamond crystals. However, the accretion of macro-molecules must be $9 described in a way different from that used to describe the growth of crystals because so...

  12. Physical processes in hot cosmic plasmas

    International Nuclear Information System (INIS)

    Fabian, A.G.; Giovannelli, F.

    1990-01-01

    The interpretation of many high energy astrophysical phenomena relies on a detailed knowledge of radiation and transport processes in hot plasmas. The understanding of these plasma properties is one of the aims of terrestrial plasma physics. While the microscopic properties of astrophysical plasmas can hardly be determined experimentally, laboratory plasmas are more easily accessible to experimental techniques, but transient phenomena and the interaction of the plasma with boundaries often make the interpretation of measurements cumbersome. This book contains the talks given at the NATO Advanced Research Workshop on astro- and plasma-physics in Vulcano, Sicily, May 29-June 2, 1989. The book focuses on three main areas: radiation transport processes in hot (astrophysical and laboratory) plasmas; magnetic fields; their generation, reconnection and their effects on plasma transport properties; relativistic and ultra-high density plasmas

  13. An assessment of radiotherapy dosimeters based on CVD grown diamond

    International Nuclear Information System (INIS)

    Ramkumar, S.; Buttar, C.M.; Conway, J.; Whitehead, A.J.; Sussman, R.S.; Hill, G.; Walker, S.

    2001-01-01

    Diamond is potentially a very suitable material for use as a dosimeter for radiotherapy. Its radiation hardness, the near tissue equivalence and chemical inertness are some of the characteristics of diamond, which make it well suited for its application as a dosimeter. Recent advances in the synthesis of diamond by chemical vapour deposition (CVD) technology have resulted in the improvement in the quality of material and increased its suitability for radiotherapy applications. We report in this paper, the response of prototype dosimeters based on two different types (CVD1 and CVD2) of CVD diamond to X-rays. The diamond devices were assessed for sensitivity, dependence of response on dose and dose rate, and compared with a Scanditronix silicon photon diode and a PTW natural diamond dosimeter. The diamond devices of CVD1 type showed an initial increase in response with dose, which saturates after ∼6 Gy. The diamond devices of CVD2 type had a response at low fields ( 1162.8 V/cm), the CVD2-type devices showed polarisation and dose-rate dependence. The sensitivity of the CVD diamond devices varied between 82 and 1300 nC/Gy depending upon the sample type and the applied voltage. The sensitivity of CVD diamond devices was significantly higher than that of natural diamond and silicon dosimeters. The results suggest that CVD diamond devices can be fabricated for successful use in radiotherapy applications

  14. Microwave plasma CVD of NANO structured tin/carbon composites

    Science.gov (United States)

    Marcinek, Marek [Warszawa, PL; Kostecki, Robert [Lafayette, CA

    2012-07-17

    A method for forming a graphitic tin-carbon composite at low temperatures is described. The method involves using microwave radiation to produce a neutral gas plasma in a reactor cell. At least one organo tin precursor material in the reactor cell forms a tin-carbon film on a supporting substrate disposed in the cell under influence of the plasma. The three dimensional carbon matrix material with embedded tin nanoparticles can be used as an electrode in lithium-ion batteries.

  15. Mass production of CNTs using CVD multi-quartz tubes

    Energy Technology Data Exchange (ETDEWEB)

    Yousef, Samy; Mohamed, Alaa [Dept. of Production Engineering and Printing Technology, Akhbar Elyom Academy, Giza (Egypt)

    2016-11-15

    Carbon nanotubes (CNTs) have become the backbone of modern industries, including lightweight and heavy-duty industrial applications. Chemical vapor deposition (CVD) is considered as the most common method used to synthesize high yield CNTs. This work aims to develop the traditional CVD for the mass production of more economical CNTs, meeting the growing CNT demands among consumers by increasing the number of three particular reactors. All reactors housing is connected by small channels to provide the heat exchange possibility between the chambers, thereby decreasing synthesis time and reducing heat losses inside the ceramic body of the furnace. The novel design is simple and cheap with a lower reacting time and heat loss compared with the traditional CVD design. Methane, hydrogen, argon, and catalyzed iron nanoparticles were used as a carbon source and catalyst during the synthesis process. In addition, CNTs were produced using only a single quartz tube for comparison. The produced samples were examined using XRD, TEM, SEM, FTIR, and TGA. The results showed that the yield of CNTs increases by 287 % compared with those synthesized with a single quartz tube. Moreover, the total synthesis time of CNTs decreases by 37 % because of decreased heat leakage.

  16. Fiscal 1998 joint R and D project on industrial science and technology with university. Research report on the production process of semiconductor devices by Cat-CVD (Development of practical technology for rational use of energy); 1998 nendo daigaku renkei sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (energy shiyo gorika kankei gijutsu jitsuyoka kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-03-01

    The Cat-CVD method is in verification test to establish it as production process of various semiconductor devices such as Ga-As IC, ferroelectric IC, Si IC, and TFT. This paper outlines the research results in fiscal 1998. Study was made on concept design of the Cat-CVD equipment for formation of Ga-As protective film, and basic technology for formation of SiN{sub x} film. Although reducing gas is used for deposition of SiN{sub x} film, anxious modification of oxide ferroelectric materials was avoided by substrate temperature control. Design and fabrication of the CVD equipment for Si ICs were also studied. The equipment was made of Al to control degassing as low as possible. As for production of TFT for LCD, formation technology of high-quality insulating thin film for low-temperature poly-Si TFT by CVD method, and formation of advanced insulating thin film and advanced poly- Si thin film were studied. A large-size deposition method of TFT insulating film, and low-temperature formation technology of poly-Si were also studied. (NEDO)

  17. Plasma Ceramides, Mediterranean Diet, and Incident Cardiovascular Disease in the PREDIMED Trial

    Science.gov (United States)

    Wang, Dong D.; Toledo, Estefanía; Hruby, Adela; Rosner, Bernard A.; Willett, Walter C.; Sun, Qi; Razquin, Cristina; Zheng, Yan; Ruiz-Canela, Miguel; Guasch-Ferré, Marta; Corella, Dolores; Gómez-Gracia, Enrique; Fiol, Miquel; Estruch, Ramón; Ros, Emilio; Lapetra, José; Fito, Montserrat; Aros, Fernando; Serra-Majem, Luis; Lee, Chih-Hao; Clish, Clary B.; Liang, Liming; Salas-Salvadó, Jordi; Martínez-González, Miguel A.; Hu, Frank B.

    2017-01-01

    Background Although in vitro studies and investigations in animal models and small clinical populations have suggested that ceramides may represent an intermediate link between over-nutrition and certain pathological mechanisms underlying cardiovascular disease (CVD), no prospective studies have investigated the association between plasma ceramides and risk of CVD. Methods The study population consisted of 980 participants from the PREDIMED trial, including 230 incident cases of CVD and 787 randomly selected participants at baseline (including 37 overlapping cases), followed for up to 7.4 years. Participants were randomized to a Mediterranean diet (MedDiet) supplemented with extra-virgin olive oil, a MedDiet supplemented with nuts, or a control diet. Plasma ceramide concentrations were measured on a liquid chromatography tandem mass spectrometry metabolomics platform. The primary outcome was a composite of non-fatal acute myocardial infarction, non-fatal stroke, or cardiovascular death. Hazard Ratios (HRs) were estimated with weighted Cox regression models, using Barlow weights to account for the case-cohort design. Results The multivariable HRs [95% confidence interval (CI)] comparing the extreme quartiles of plasma concentrations of C16:0, C22:0, C24:0 and C24:1 ceramides were 2.39 (1.49–3.83, P trend <0.001), 1.91 (1.21–3.01, P trend =0.003), 1.97 (1.21–3.01, P trend =0.004), and 1.73 (1.09–2.74, P trend =0.011), respectively. The ceramide score, calculated as a weighted sum of concentrations of four ceramides, was associated with a 2.18-fold higher risk of CVD across extreme quartiles (HR =2.18, 95% CI, 1.36–3.49, P trend <0.001). The association between baseline ceramide score and incident CVD varied significantly by treatment groups (P interaction =0.010). Participants with a higher ceramide score and assigned to either of the two active intervention arms of the trial showed similar CVD risk to those with a lower ceramide score, whereas participants

  18. RF characteristic of MESFET on H-terminated DC arc jet CVD diamond film

    International Nuclear Information System (INIS)

    Liu, J.L.; Li, C.M.; Zhu, R.H.; Guo, J.C.; Chen, L.X.; Wei, J.J.; Hei, L.F.; Wang, J.J.; Feng, Z.H.; Guo, H.; Lv, F.X.

    2013-01-01

    Diamond has been considered to be a potential material for high-frequency and high-power electronic devices due to the excellent electrical properties. In this paper, we reported the radio frequency (RF) characteristic of metal-semiconductor field effect transistor (MESFET) on polycrystalline diamond films prepared by direct current (DC) arc jet chemical vapor deposition (CVD). First, 4 in polycrystalline diamond films were deposited by DC arc jet CVD in gas recycling mode with the deposition rate of 14 μm/h. Then the polished diamond films were treated by microwave hydrogen plasma and the 0.2 μm-gate-length MESFET was fabricated by using Au mask photolithography and electron beam (EB) lithography. The surface conductivity of the H-terminated diamond film and DC and RF performances of the MESFET were characterized. The results demonstrate that, the carrier mobility of 24.6 cm 2 /V s and the carrier density of 1.096 × 10 13 cm −2 are obtained on the surface of H-terminated diamond film. The FET shows the maximum transition frequency (f T ) of 5 GHz and the maximum oscillation frequency (f max ) of 6 GHz at V GS = −0.5 V and V DS = −8 V, which indicates that H-terminated DC arc jet CVD polycrystalline diamond is suitable for the development of high frequency devices.

  19. Plasma technologies: applications to waste processing

    International Nuclear Information System (INIS)

    Fauchais, P.

    2007-01-01

    Since the 1990's, plasma technologies have found applications in the processing of toxic wastes of military and industrial origin, like the treatment of contaminated solids and low level radioactive wastes, the decontamination of soils etc.. Since the years 2000, this development is becoming exponential, in particular for the processing of municipal wastes and the recovery of their synthesis gas. The advantage of thermal plasmas with respect to conventional combustion techniques are: a high temperature (more than 6000 K), a pyrolysis capability (CO formation instead of CO 2 ), about 90% of available energy above 1500 K (with respect to 23% with flames), a greater energy density, lower gas flow rates, and plasma start-up and shut-down times of only few tenth of seconds. This article presents: 1 - the present day situation of thermal plasmas development; 2 - some general considerations about plasma waste processing; 3 - the plasma processes: liquid toxic wastes, solid wastes (contaminated soils and low level radioactive wastes, military wastes, vitrification of incinerators fly ash, municipal wastes processing, treatment of asbestos fibers, treatment of chlorinated industrial wastes), metallurgy wastes (dusts, aluminium slags), medical and ship wastes, perspectives; 4 -conclusion. (J.S.)

  20. Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

    Science.gov (United States)

    Lampkin, Gregory; Thomas, Edward, Jr.; Watson, Michael; Wallace, Kent; Chen, Henry; Burger, Arnold

    1998-01-01

    The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

  1. Non equilibrium atomic processes and plasma spectroscopy

    International Nuclear Information System (INIS)

    Kato, Takako

    2003-01-01

    Along with the technical progress in plasma spectroscopy, non equilibrium ionization processes have been recently observed. We study non local thermodynamic equilibrium and non ionization equilibrium for various kinds of plasmas. Specifically we discuss non equilibrium atomic processes in magnetically confined plasmas, solar flares and laser produced plasmas using a collisional radiative model based on plasma spectroscopic data. (author)

  2. CVD Diamond Sensors In Detectors For High Energy Physics

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00334150; Trischuk, William

    At the end of the next decade an upgrade of the Large Hadron Collider (LHC) to High Luminosity LHC (HL-LHC) is planned which requires the development of new radiation tolerant sensor technology. Diamond is an interesting material for use as a particle detector in high radiation environments. The large band gap ($5.47\\,\\text{eV}$) and the large displacement energy suggest that diamond is a radiation tolerant detector material. In this Thesis the capability of Chemical Vapor Deposition (CVD) diamond as such a sensor technology is investigated. The radiation damage constant for $800\\,\\text{MeV}$ protons is measured using single crystalline CVD (scCVD) and polycrystalline CVD (pCVD) diamonds irradiated to particle fluences up to $12 \\times 10^{15}\\,\\text{p/cm}^2$. In addition the signal response of a pCVD diamond detector after an irradiation to $12 \\times 10^{15}\\,\\text{p/cm}^2$ is investigated to determine if such a detector can be operated efficiently in the expected HL-LHC environment. By using electrodes em...

  3. Plasma copeptin as marker of cardiovascular disease in asymptomatic type 2 diabetes patients

    DEFF Research Database (Denmark)

    Bar-Shalom, Dana; Poulsen, Mikael K; Rasmussen, Lars M

    2014-01-01

    Recently, copeptin was found associated with cardiovascular disease (CVD) and all-cause mortality in type 2 diabetes mellitus (T2DM) patients treated in primary care. This study aimed to evaluate whether plasma copeptin correlated to CVD in asymptomatic T2DM patients intensively investigated....... A variety of clinical investigations were performed, including blood pressure measurements, carotid intima media thickness evaluation and myocardial perfusion scintigraphy. Blood sample analyses included copeptin measurements. Median plasma copeptin concentrations were similar in the T2DM group...... for sub-clinical CVD. A total of 302 T2DM patients referred to the Diabetes Clinic at Odense University Hospital, Denmark, entered the study. None of the patients had known or suspected CVD. As a control group, 30 healthy adults were recruited from the DanRisk study - a random sample of middle-aged Danes...

  4. Atomic processes in high temperature plasmas

    International Nuclear Information System (INIS)

    Hahn, Y.

    1990-03-01

    Much theoretical and experimental efforts have been expended in recent years to study those atomic processes which are specially relevant to understanding high temperature laboratory plasmas. For magnetically confined fusion plasmas, the temperature range of interest spans from the hundreds of eV at plasma edges to 10 keV at the center of the plasma, where most of the impurity ions are nearly fully ionized. These highly stripped ions interact strongly with electrons in the plasma, leading to further excitation and ionization of the ions, as well as electron capture. Radiations are emitted during these processes, which easily escape to plasma container walls, thus cooling the plasma. One of the dominant modes of radiation emission has been identified with dielectronic recombination. This paper reviews this work

  5. Preparation of LiMn2O4 cathode thin films for thin film lithium secondary batteries by a mist CVD process

    International Nuclear Information System (INIS)

    Tadanaga, Kiyoharu; Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro; Duran, Alicia; Aparacio, Mario

    2014-01-01

    Highlights: • LiMn 2 O 4 thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn 2 O 4 thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn 2 O 4 cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles

  6. Growth and characterization of nanodiamond layers prepared using plasma enhanced linear antennas microwave CVD system

    Czech Academy of Sciences Publication Activity Database

    Fendrych, František; Taylor, Andrew; Peksa, Ladislav; Kratochvílová, Irena; Vlček, J.; Řezáčová, V.; Petrák, V.; Kluiber, Z.; Fekete, Ladislav; Liehr, M.; Nesládek, M.

    2010-01-01

    Roč. 43, č. 37 (2010), 374018/1-374018/6 ISSN 0022-3727 R&D Projects: GA AV ČR KAN200100801; GA AV ČR KAN300100801; GA AV ČR KAN301370701 Institutional research plan: CEZ:AV0Z10100520 Keywords : nanodiamond, * thin films * PE MW CVD * linear antennas Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.105, year: 2010

  7. Biomimetic architectures by plasma processing fabrication and applications

    CERN Document Server

    Chattopadhyay, Surojit

    2014-01-01

    Photonic structures in the animal kingdom: valuable inspirations for bio-mimetic applications. Moth eye-type anti-reflecting nanostructures by an electron cyclotron resonance plasma. Plasma-processed biomimetic nano/microstructures. Wetting properties of natural and plasma processed biomimetic surfaces. Biomimetic superhydrophobic surface by plasma processing. Biomimetic interfaces of plasma modified titanium alloy.

  8. Electrolytic plasma processing of steel surfaces

    International Nuclear Information System (INIS)

    Bejar, M.A; Araya, R.N; Baeza, B

    2006-01-01

    The thermo-chemical treatments of steels with plasma is normally carried out in low-pressure ionized gaseous atmospheres. Among the treatments used most often are: nitruration, carburization and boronized. A plasma can also generate at atmospheric pressure. One way to produce it is with an electrochemical cell that works at a relatively high inter-electrode voltage and under conditions of heavy gas generation. This type of plasma is known as electrolytic plasma. This work studies the feasibility of using electrolytic plasma for the surface processing of steels. Two processes were selected: boronized and nitruration., for the hardening of two types of steel: one with low carbon (1020) and one with low alloy (4140). In the case of the nitruration, the 1020 steel was first aluminized. The electrolytes were aqueous solutions of borax for the boronizing and urea for the nitruration. The electrolytic plasmas were classified qualitatively, in relation with their luminosity by low, medium and high intensity. The boronizing was carried out with low intensity plasmas for a period of one hour. The nitruration was performed with plasmas of different intensities and for period of a few minutes to half an hour. The test pieces processed by electrolytic plasma were characterized by micro-hardness tests and X-ray diffraction. The maximum surface hardnesses obtained for the 1020 and 4140 steels were the following: 300 and 700 HV for the boronizing, and 1650 and 1200 HV for the nitruration, respectively. The utilization of an electrolytic plasma permits the surface processing of steels, noticeably increasing their hardness. With this type of plasma some thermo-chemical surface treatments can be done very rapidly as well (CW)

  9. Dimensionless Numbers Expressed in Terms of Common CVD Process Parameters

    Science.gov (United States)

    Kuczmarski, Maria A.

    1999-01-01

    A variety of dimensionless numbers related to momentum and heat transfer are useful in Chemical Vapor Deposition (CVD) analysis. These numbers are not traditionally calculated by directly using reactor operating parameters, such as temperature and pressure. In this paper, these numbers have been expressed in a form that explicitly shows their dependence upon the carrier gas, reactor geometry, and reactor operation conditions. These expressions were derived for both monatomic and diatomic gases using estimation techniques for viscosity, thermal conductivity, and heat capacity. Values calculated from these expressions compared well to previously published values. These expressions provide a relatively quick method for predicting changes in the flow patterns resulting from changes in the reactor operating conditions.

  10. Plasma-chemical processes and systems

    International Nuclear Information System (INIS)

    Castro B, J.

    1987-01-01

    The direct applications of plasma technology on chemistry and metallurgy are presented. The physical fundaments of chemically active non-equilibrium plasma, the reaction kinetics, and the physical chemical transformations occuring in the electrical discharges, which are applied in the industry, are analysed. Some plasma chemical systems and processes related to the energy of hydrogen, with the chemical technology and with the metallurgy are described. Emphasis is given to the optimization of the energy effectiveness of these processes to obtain reducers and artificial energetic carriers. (M.C.K.) [pt

  11. Síntesis de materiales cerámicos mediante técnicas químicas en fase vapor (CVD

    Directory of Open Access Journals (Sweden)

    Gómez-Aleixandre, C.

    2003-02-01

    Full Text Available Chemical vapour deposition (CVD has been successfully used for the synthesis of a large variety of compounds. Initially the technique was developed for microelectronic applications and then was widespread used for the preparation of hard coatings, optoelectronic and superconductor materials. Among the characteristics inherent to the CVD technique it is worth mentioning the preparation of homogeneous deposits at relatively low temperatures mostly when the reaction is electrically or laser plasma or photon activated. New materials with given characteristics can be produced by properly choosing the reactant gas mixture as well as its relative composition. The presentation will be also focussed onto the deposition of different materials, such as carbon films (both crystalline, and amorphous with diamond-like properties, deposited by plasma assisted CVD techniques using methane and hydrogen gas mixtures. Also, the deposition of binary compounds, as boron nitride will be reviewed. Finally, the experimental requirements for obtaining new ternary compounds from the system Si-B-N-C (i.e.: CBN, SiBN will be discussed. The properties of these materials strongly depend on their composition and structure. Therefore, by adequate selection of the experimental parameters, it is possible to obtain ternary compounds with tailored characteristics.

    Actualmente, la técnica de CVD está siendo utilizada en la síntesis de una gran variedad de compuestos cerámicos, generalmente en forma de capa delgada. La técnica, desarrollada inicialmente para su aplicación en microelectrónica, ha sido después utilizada con éxito en otras áreas de gran actividad científica y tecnológica (recubrimientos duros, dispositivos optoelectrónicos, materiales superconductores, etc.. Entre las características más positivas de las técnicas de CVD, cabe destacar la obtención de depósitos homogéneos a temperaturas relativamente bajas, sobre todo cuando la activación de

  12. Transport mechanisms through PE-CVD coatings: influence of temperature, coating properties and defects on permeation of water vapour

    International Nuclear Information System (INIS)

    Kirchheim, Dennis; Jaritz, Montgomery; Hopmann, Christian; Dahlmann, Rainer; Mitschker, Felix; Awakowicz, Peter; Gebhard, Maximilian; Devi, Anjana; Brochhagen, Markus; Böke, Marc

    2017-01-01

    Gas transport mechanisms through plastics are usually described by the temperature-dependent Arrhenius-model and compositions of several plastic layers are represented by the CLT. When it comes to thin films such as plasma-enhanced chemical vapour deposition (PE-CVD) or plasma-enhanced atomic layer deposition (PE-ALD) coatings on substrates of polymeric material, a universal model is lacking. While existing models describe diffusion through defects, these models presume that permeation does not occur by other means of transport mechanisms. This paper correlates the existing transport models with data from water vapour transmission experiments. (paper)

  13. The capability of plasma osteoprotegerin as a predictor of cardiovascular disease: a systematic literature review

    DEFF Research Database (Denmark)

    Nybo, Mads; Rasmussen, Lars M

    2008-01-01

    OBJECTIVE: Osteoprotegerin (OPG) strongly inhibits bone resorption and may also serve as a vascular calcification inhibitor. However, recent studies have indicated that high plasma OPG is a strong predictor of cardiovascular disease (CVD) and mortality. To evaluate this capability, the data...... to the existing markers of CVD and mortality in high-risk populations. Hazard ratios emphasized the significant correlation between plasma OPG concentration and mortality. Due to methodological problems (e.g., population investigated, measurement principle, and statistics performed), meta-analysis could...... not be performed. As only one study was conducted in a healthy cohort, the results cannot per se be extrapolated to the general population. CONCLUSION: The combined results support plasma OPG as an independent predictor of CVD and mortality in high-risk populations. However, more longitudinal studies in general...

  14. Micro-texturing into DLC/diamond coated molds and dies via high density oxygen plasma etching

    Directory of Open Access Journals (Sweden)

    Yunata Ersyzario Edo

    2015-01-01

    Full Text Available Diamond-Like Carbon (DLC and Chemical Vapor Deposition (CVD-diamond films have been widely utilized not only as a hard protective coating for molds and dies but also as a functional substrate for bio-MEMS/NEMS. Micro-texturing into these hard coated molds and dies provides a productive tool to duplicate the original mother micro-patterns onto various work materials and to construct any tailored micro-textures for sensors and actuators. In the present paper, the high density oxygen plasma etching method is utilized to make micro-line and micro-groove patterns onto the DLC and diamond coatings. Our developing oxygen plasma etching system is introduced together with characterization on the plasma state during etching. In this quantitative plasma diagnosis, both the population of activated species and the electron and ion densities are identified through the emissive light spectroscopy and the Langmuir probe method. In addition, the on-line monitoring of the plasmas helps to describe the etching process. DLC coated WC (Co specimen is first employed to describe the etching mechanism by the present method. Chemical Vapor Deposition (CVD diamond coated WC (Co is also employed to demonstrate the reliable capacity of the present high density oxygen plasma etching. This oxygen plasma etching performance is discussed by comparison of the etching rates.

  15. Review: Plasma-enhanced chemical vapor deposition of nanocrystalline diamond

    Directory of Open Access Journals (Sweden)

    Katsuyuki Okada

    2007-01-01

    Full Text Available Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles of 200–700 nm diameter have been prepared in a 13.56 MHz low-pressure inductively coupled CH4/CO/H2 plasma. The bonding state of carbon atoms was investigated by ultraviolet-excited Raman spectroscopy. Electron energy loss spectroscopy identified sp2-bonded carbons around the 20–50 nm subgrains of nanocrystalline diamond particles. Plasma diagnostics using a Langmuir probe and the comparison with plasma simulation are also reviewed. The electron energy distribution functions are discussed by considering different inelastic interaction channels between electrons and heavy particles in a molecular CH4/H2 plasma.

  16. Synthesis of AlN fine particles by surface corona discharge-CVD; Enmen corona hoden CVD ni yoru AlN biryushi no gosei

    Energy Technology Data Exchange (ETDEWEB)

    Oyama, Y.; Chiba, S. [Hokkaido National Industrial Research Institute, Sapporo (Japan); Harima, K> ; Kondo, K.; Shinohara, K. [Hokkaido University, Sapporo (Japan)

    1994-09-15

    With an objective to improve insulating and heat dissipating substrates substituting for the conventional alumina substrates, discussions been given on synthesis of AlN fine particles by means of gaseous phase reaction between AlCl3 and NH3 using surface corona discharge as a reaction exciting source. AIN particles should be highly pure to acquire high-heat conductivity, and fine and uniform particles to obtain dense sinters at low temperatures. The particles obtained by using the present method were amorphous particles having nearly spherical form and smooth surface. The particle diameter depends on the initial concentration of AlCl3, and is proportional to 0.4 square of the concentration. Within the range in the present experiment, the diameters ranged from 208 nm to 431 nm. The particle diameter increased in proportion to 0.2 square of an average gas stagnating time within the plasma generating region. The particle size distribution consisted of highly uniform fine particles having the standard deviation at about the same degree as that in the conventional thermal CVD process. The alumina-based oxygen was removed completely by reduction due to graphite powder, but the re-oxidation during removal of the remaining graphite using combustion had oxygen remained at 7.4% by weight. 16 refs., 7 figs.

  17. High plasma homocyst(e)ine levels in elderly Japanese patients are associated with increased cardiovascular disease risk independently from markers of coagulation activation and endothelial cell damage.

    Science.gov (United States)

    Kario, K; Duell, P B; Matsuo, T; Sakata, T; Kato, H; Shimada, K; Miyata, T

    2001-08-01

    Elevated plasma homocyst(e)ine is a risk factor for cardiovascular disease (CVD) in many populations, but the relationship between homocyst(e)ine and CVD in Japanese subjects has been unclear. It has been hypothesized that the link between homocyst(e)ine and CVD may be mediated in part by activation of coagulation and endothelial cell injury in the elderly Japanese subjects. To further evaluate this hypothesis, the present cross-sectional study was designed to assess the relationships among plasma homocyst(e)ine concentrations, risk of CVD, and markers of coagulation (fibrinogen, FVII, F1+2, FVIIa and FXIIa) and endothelial cell damage (vWF and thrombomodulin) in 146 elderly Japanese subjects (79 healthy controls and 67 patients with CVD). The geometric mean (range) of plasma homocyst(e)ine concentrations was 10.2 (3.2--33) micromol/l in 79 Japanese healthy elderly subjects. As expected, healthy female and male elderly subjects had homocyst(e)ine levels that were 2.5 and 5.3 micromol/; higher, respectively, compared to healthy young control subjects (n=62). Healthy young and elderly men had homocyst(e)ine levels that were 1.7 and 4.5 micromol/l higher, respectively, compared to values in women. This higher plasma homocyst(e)ine levels in the elderly subjects were negatively correlated with levels of folic acid, albumin and total cholesterol, but were not significantly related to markers of coagulation or endothelial cell-damage. The results of multiple logistic regression analyses suggested that high homocyst(e)ine levels were independently related to CVD risk. In addition, levels of FVIIa, and F1+2 were significantly higher in elderly Japanese patients with CVD compared to elderly subjects without CVD, but were unrelated to plasma homocyst(e)ine concentrations. In summary, elevated plasma concentrations of homocyst(e)ine, FVIIa, and F1+2 were associated with increased risk of CVD in elderly male and female Japanese subjects, but the association between homocyst

  18. Beam-generated plasmas for processing applications

    Science.gov (United States)

    Meger, R. A.; Blackwell, D. D.; Fernsler, R. F.; Lampe, M.; Leonhardt, D.; Manheimer, W. M.; Murphy, D. P.; Walton, S. G.

    2001-05-01

    The use of moderate energy electron beams (e-beams) to generate plasma can provide greater control and larger area than existing techniques for processing applications. Kilovolt energy electrons have the ability to efficiently ionize low pressure neutral gas nearly independent of composition. This results in a low-temperature, high-density plasma of nearly controllable composition generated in the beam channel. By confining the electron beam magnetically the plasma generation region can be designated independent of surrounding structures. Particle fluxes to surfaces can then be controlled by the beam and gas parameters, system geometry, and the externally applied rf bias. The Large Area Plasma Processing System (LAPPS) utilizes a 1-5 kV, 2-10 mA/cm2 sheet beam of electrons to generate a 1011-1012cm-3 density, 1 eV electron temperature plasma. Plasma sheets of up to 60×60 cm2 area have been generated in a variety of molecular and atomic gases using both pulsed and cw e-beam sources. The theoretical basis for the plasma production and decay is presented along with experiments measuring the plasma density, temperature, and potential. Particle fluxes to nearby surfaces are measured along with the effects of radio frequency biasing. The LAPPS source is found to generate large-area plasmas suitable for materials processing.

  19. Treatment with liraglutide may improve markers of CVD reflected by reduced levels of apoB.

    Science.gov (United States)

    Engelbrechtsen, L; Lundgren, J; Wewer Albrechtsen, N J; Mahendran, Y; Iepsen, E W; Finocchietto, P; Jonsson, A E; Madsbad, S; Holst, J J; Vestergaard, H; Hansen, T; Torekov, S S

    2017-12-01

    Dislipidaemia and increased levels of apolipoprotein B (apoB) in individuals with obesity are risk factors for development of cardiovascular disease (CVD). The aim of this study was to investigate the effect of weight loss and weight maintenance with and without liraglutide treatment on plasma lipid profiles and apoB. Fifty-eight individuals with obesity (body mass index 34.5 ± 3.0 kg/m 2 [mean ± SD]) were included in this study. After 8 weeks on a very low-calorie diet (800 kcal/day), participants were randomized to weight maintenance with meal replacements with or without liraglutide (1.2 mg daily) for 1 year. Plasma samples from before and after weight loss and after 1 year of weight maintenance were subjected to nuclear magnetic resonance-based lipidomics analysis. After an 8-week low-calorie diet, study participants lost 12.0 ± 2.9 kg (mean ± SD) of their body weight, which was reflected in their lipid profiles (80 out of 124 lipids changed significantly), including reduced levels of apoB, total cholesterol, free cholesterol, remnant cholesterol, triglycerides, low-density lipoprotein and very low-density lipoprotein subclasses. After 1 year of maintained weight loss, the majority of the lipids had returned to pre-weight loss levels even though weight loss was successfully maintained in both groups. Interestingly, apoB levels remained low in the liraglutide treated group (apoB change: 0.03 ± 0.02 mmol/L, p = 0.4) in contrast to an increase in the control group (apoB change: 0.06 ± 0.07 mmol/L, p = 0.02). An 8-week low-calorie diet, in individuals with obesity, reduced plasma levels of lipids and the atherogenic marker apoB. After 1 year of weight maintenance, only study participants treated with liraglutide maintained reduced levels of apoB, despite similar body weight maintenance. Treatment with liraglutide may therefore reduce apoB levels and thus reflect lower CVD risk. Including apoB measurements in clinical practice when

  20. Effect of PbI2 deposition rate on two-step PVD/CVD all-vacuum prepared perovskite

    International Nuclear Information System (INIS)

    Ioakeimidis, Apostolos; Christodoulou, Christos; Lux-Steiner, Martha; Fostiropoulos, Konstantinos

    2016-01-01

    In this work we fabricate all-vacuum processed methyl ammonium lead halide perovskite by a sequence of physical vapour deposition of PbI 2 and chemical vapour deposition (CVD) of CH 3 NH 3 I under a static atmosphere. We demonstrate that for higher deposition rate the (001) planes of PbI 2 film show a higher degree of alignment parallel to the sample's surface. From X-ray diffraction data of the resulted perovskite film we derive that the intercalation rate of CH 3 NH 3 I is fostered for PbI 2 films with higher degree of (001) planes alignment. The stoichiometry of the produced perovskite film is also studied by Hard X-ray photoelectron spectroscopy measurements. Complete all-vacuum perovskite solar cells were fabricated on glass/ITO substrates coated by an ultra-thin (5 nm) Zn-phthalocyanine film as hole selective layer. A dependence of residual PbI 2 on the solar cells performance is displayed, while photovoltaic devices with efficiency up to η=11.6% were achieved. - Graphical abstract: A two-step PVD/CVD processed perovskite film with the CVD intercalation rate of CH 3 NCH 3 molecules been fostered by increasing the PVD rate of PbI 2 and prolonging the CVD time. - Highlights: • A simple PVD/CVD process for perovskite film production. • Increased PVD rate yields better alignment of the PbI 2 (001) crystallite planes. • CH 3 NH 3 I intercalation process fostered by increased PbI 2 PVD rate. • Stoichiometric CH 3 NH 3 PbI 3 suitable as absorber in photovoltaic applications • Reduced PbI 2 residue at the bottom of CH 3 NH 3 PbI 3 improves device performance.

  1. Understanding plasma spraying process and characteristics of DC-arc plasma gun (PJ-100

    Directory of Open Access Journals (Sweden)

    Jovana Ružić

    2012-12-01

    Full Text Available The thermal spray processes are a group of coating processes used to apply metallic or non-metallic coatings. In these processes energy sources are used to heat the coating material (in the form of powder, wire, or rod form to a molten or semi-molten state and accelerated towards a prepared surface by either carrier gases or atomization jets. In plasma spraying process, the spraying material is generally in the form of powder and requires a carrier gas to feed the powder into the plasma jet, which is passing between the hot cathode and the cylindrical nozzle-shaped anode. The design of DC plasma gun (PJ - 100 is designed and manufactured in Serbia. Plasma spaying process, the powder injection with the heat, momentum and mass transfers between particles and plasma jet, and the latest developments related to the production of DC plasma gun are described in this article.

  2. Test of radiation hardness of pcCVD detectors

    Energy Technology Data Exchange (ETDEWEB)

    Schlemme, Steffen [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Technische Universitaet Darmstadt (Germany); Enders, Joachim [Technische Universitaet Darmstadt (Germany); Figuera, P.; Salamone, S. [LNS-INFN Catania (Italy); Fruehauf, J.; Kis, Mladen; Kratz, A.; Kurz, N.; Loechner, S.; Nociforo, Chiara; Schirru, Fabio; Szczepanczyk, B.; Traeger, M.; Visinka, R. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Musumarra, A. [LNS-INFN Catania (Italy); University of Catania (Italy)

    2016-07-01

    The new in-flight separator Super-FRS is under construction at the Facility for Antiproton and Ion Research (FAIR, Darmstadt). Ion rates up to 3 x 10{sup 11} {sup 238}U/spill demand an adaption of detectors to a high radiation environment. A test experiment to investigate the radiation hardness of polycrystalline diamond detectors (pcCVD) was performed at the LNS-INFN in Catania using a {sup 12}C beam at 62 MeV/u and intensities of up to 1.5 pnA. The setup consisted of pcCVD strip detectors to measure the beam profile, a single crystal diamond detector to calibrate the ionisation chamber working in current mode as a beam intensity monitor and a pcCVD sample to be irradiated. The IC used was designed for FAIR and showed a stable counting rate allowing us to calibrate and perform beam intensity measurements with it. The total measured counts on the sample were 8.25 x 10{sup 11} counts/mm{sup 2} over a period of 60 hours. Digital waveforms of the pcCVD signals were taken with an oscilloscope and analysed. The results showed no change of the pcCVD signal properties during the entire irradiation.

  3. CVD of solid oxides in porous substrates for ceramic membrane modification

    NARCIS (Netherlands)

    Lin, Y.S.; Lin, Y.S.; Burggraaf, Anthonie; Burggraaf, A.J.

    1992-01-01

    The deposition of yttria-doped zirconia has been experimented systematically in various types of porous ceramic substrates by a modified chemical vapor deposition (CVD) process operating in an opposing reactant geometry using water vapor and corresponding metal chloride vapors as reactants. The

  4. Plasma surface interaction processes and possible synergisms

    International Nuclear Information System (INIS)

    Behrisch, R.; Roberto, J.B.

    1984-08-01

    The process determining the plasma surface interaction in today's high temperature plasma experiments are investigated following several lines. First, in plasma devices, the particle and energy fluxes to the different first wall areas the fluxes from the walls back into the plasma are measured and the boundary plasma parameters are determined. The surface composition and structure of the walls, limiters and divertor plates are analyzed following exposure to many discharges. Secondly, the different surface processes which are expected to contribute to the plasma surface interaction (particularly to hydrogen particle balance and impurity introduction) are studied in simulation experiments using well defined particle beams

  5. Hydrogen Plasma Processing of Iron Ore

    Science.gov (United States)

    Sabat, Kali Charan; Murphy, Anthony B.

    2017-06-01

    Iron is currently produced by carbothermic reduction of oxide ores. This is a multiple-stage process that requires large-scale equipment and high capital investment, and produces large amounts of CO2. An alternative to carbothermic reduction is reduction using a hydrogen plasma, which comprises vibrationally excited molecular, atomic, and ionic states of hydrogen, all of which can reduce iron oxides, even at low temperatures. Besides the thermodynamic and kinetic advantages of a hydrogen plasma, the byproduct of the reaction is water, which does not pose any environmental problems. A review of the theory and practice of iron ore reduction using a hydrogen plasma is presented. The thermodynamic and kinetic aspects are considered, with molecular, atomic and ionic hydrogen considered separately. The importance of vibrationally excited hydrogen molecules in overcoming the activation energy barriers, and in transferring energy to the iron oxide, is emphasized. Both thermal and nonthermal plasmas are considered. The thermophysical properties of hydrogen and argon-hydrogen plasmas are discussed, and their influence on the constriction and flow in the of arc plasmas is considered. The published R&D on hydrogen plasma reduction of iron oxide is reviewed, with both the reduction of molten iron ore and in-flight reduction of iron ore particles being considered. Finally, the technical and economic feasibility of the process are discussed. It is shown that hydrogen plasma processing requires less energy than carbothermic reduction, mainly because pelletization, sintering, and cokemaking are not required. Moreover, the formation of the greenhouse gas CO2 as a byproduct is avoided. In-flight reduction has the potential for a throughput at least equivalent to the blast furnace process. It is concluded that hydrogen plasma reduction of iron ore is a potentially attractive alternative to standard methods.

  6. Method and apparatus for monitoring plasma processing operations

    Science.gov (United States)

    Smith, Jr., Michael Lane; Ward, Pamela Denise Peardon; Stevenson, Joel O'Don

    2002-01-01

    The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber. Plasma health evaluations and process identification through optical emissions analysis are included in this aspect. Yet another aspect associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma recipe, plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasma step of a multiple step plasma recipe). Another aspect associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility, such as the distribution of wafers to a wafer production system. A final aspect of the present invention relates to a network a plurality of plasma monitoring systems, including with remote capabilities (i.e., outside of the clean room).

  7. Surface photo reaction processes using synchrotron radiation; Hoshako reiki ni yoru hyomenko hanno process

    Energy Technology Data Exchange (ETDEWEB)

    Imaizumi, Y. [Tohoku University, Sendai (Japan). Institute for Materials Research; Yoshigoe, A. [Toyohashi University of Technology, Aichi (Japan); Urisu, T. [Toyohashi University of Technology, Aichi (Japan). Institute for Molecular Science

    1997-08-20

    This paper introduces the surface photo reaction processes using synchrotron radiation, and its application. A synchrotron radiation process using soft X-rays contained in electron synchrotron radiated light as an excited light source has a possibility of high-resolution processing because of its short wave length. The radiated light can excite efficiently the electronic state of a substance, and can induce a variety of photochemical reactions. In addition, it can excite inner shell electrons efficiently. In the aspect of its application, it has been found that, if radiated light is irradiated on surfaces of solids under fluorine-based reaction gas or Cl2, the surfaces can be etched. This technology is utilized practically. With regard to radiated light excited CVD process, it may be said that anything that can be deposited by the ordinary plasma CVD process can be deposited. Its application to epitaxial crystal growth may be said a nano processing application in thickness direction, such as forming an ultra-lattice structure, the application being subjected to expectation. In micromachine fabricating technologies, a possibility is searched on application of a photo reaction process of the radiated light. 5 refs., 6 figs.

  8. Plasma Technologies of Solid Fuels Processing

    International Nuclear Information System (INIS)

    Karpenko, E.I.; Messerle, V.E.; Ustimenko, A.

    2003-01-01

    Use of fuel processing plasma technologies improves ecological and economical indexes of low-grade coal utilization at thermal power plants. This paper presents experimental plasma plant 70 k W of power and 11 kg per hour of coal productivity. On the base of material and heat balances integral indexes of the process of plasma gasification of Podmoskovny brown coal 48% of ash content were found. Synthesis gas with concentration 85.2% was got. Hydrogen concentration in the synthesis gas was higher than carbon monoxide one. Ratio H 2 :CO in synthesis gas was 1.4-1.5. It was shown that steam consumption and temperature of the process increase causes H 2 concentration and coal gasification degree increase. Fulfilled experiments and comparison of their result with theoretical investigations allowed creating pilot experimental plant for plasma processing of low-grade coals. The power of the pilot plant is 1000 k W and coal productivity is 300 kg/h. (author)

  9. Plasma Clot Lysis Time and Its Association with Cardiovascular Risk Factors in Black Africans

    NARCIS (Netherlands)

    Z. de Lange (Zelda); M. Pieters (Marlien); J.C. Jerling (Johann); A. Kruger (Annamarie); D.C. Rijken (Dingeman)

    2012-01-01

    textabstractStudies in populations of European descent show longer plasma clot lysis times (CLT) in patients with cardiovascular disease (CVD) than in controls. No data are available on the association between CVD risk factors and fibrinolytic potential in black Africans, a group undergoing rapid

  10. New deposition processes for the growth of oxide and nitride thin films

    International Nuclear Information System (INIS)

    Apen, E.A.; Atagi, L.M.; Barbero, R.S.; Espinoza, B.F.; Hubbard, K.M.; Salazar, K.V.; Samuels, J.A.; Smith, D.C.; Hoffman, D.M.

    1998-01-01

    This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The goal of this effort is to study the use of homoleptic metal amido compounds as precursors for chemical vapor deposition (CVD). The amides offer potential for the deposition of a variety of important materials at low temperatures. The establishment of these precursor compounds will enhance the ability to exploit the properties of advanced materials in numerous coatings applications. Experiments were performed to study the reactivity of Sn[NMe 2 ] 4 with oxygen. The data demonstrated that gas-phase insertion of oxygen into the Sn-N bond, leading to a reactive intermediate, plays an important role in tin oxide deposition. Several CVD processes for technologically important materials were developed using the amido precursor complexes. These included the plasma enhanced CVD of TiN and Zr 3 N 4 , and the thermal CVD of GaN and AlN. Quality films were obtained in each case, demonstrating the potential of the amido compounds as CVD precursors

  11. A CVD diamond beam telescope for charged particle tracking

    CERN Document Server

    Adam, W; Bergonzo, P; de Boer, Wim; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Dulinski, W; Doroshenko, J; Doucet, M; van Eijk, B; Fallou, A; Fischer, P; Fizzotti, F; Kania, D R; Gan, K K; Grigoriev, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kaplon, J; Kass, R; Keil, M; Knöpfle, K T; Koeth, T W; Krammer, Manfred; Meuser, S; Lo Giudice, A; MacLynne, L; Manfredotti, C; Meier, D; Menichelli, D; Mishina, M; Moroni, L; Noomen, J; Oh, A; Pan, L S; Pernicka, Manfred; Perera, L P; Riester, J L; Roe, S; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Trischuk, W; Tromson, D; Vittone, E; Weilhammer, Peter; Wermes, N; Wetstein, M; Zeuner, W; Zöller, M

    2002-01-01

    CVD diamond is a radiation hard sensor material which may be used for charged particle tracking near the interaction region in experiments at high luminosity colliders. The goal of the work described here is to investigate the use of several detector planes made of CVD diamond strip sensors for charged particle tracking. Towards this end a tracking telescope composed entirely of CVD diamond planes has been constructed. The telescope was tested in muon beams and its tracking capability has been investigated.

  12. Verification of thermo-fluidic CVD reactor model

    International Nuclear Information System (INIS)

    Lisik, Z; Turczynski, M; Ruta, L; Raj, E

    2014-01-01

    Presented paper describes the numerical model of CVD (Chemical Vapour Deposition) reactor created in ANSYS CFX, whose main purpose is the evaluation of numerical approaches used to modelling of heat and mass transfer inside the reactor chamber. Verification of the worked out CVD model has been conducted with measurements under various thermal, pressure and gas flow rate conditions. Good agreement between experimental and numerical results confirms correctness of the elaborated model.

  13. Mapping of 79 loci for 83 plasma protein biomarkers in cardiovascular disease

    DEFF Research Database (Denmark)

    Folkersen, Lasse Westergaard; Fauman, Eric; Sabater-Lleal, Maria

    2017-01-01

    Recent advances in highly multiplexed immunoassays have allowed systematic large-scale measurement of hundreds of plasma proteins in large cohort studies. In combination with genotyping, such studies offer the prospect to 1) identify mechanisms involved with regulation of protein expression...... in plasma, and 2) determine whether the plasma proteins are likely to be causally implicated in disease. We report here the results of genome-wide association (GWA) studies of 83 proteins considered relevant to cardiovascular disease (CVD), measured in 3,394 individuals with multiple CVD risk factors. We...... on coronary artery disease, and highlight several potentially causal associations. Overall, a majority of the plasma proteins studied showed evidence of regulation at the genetic level. Our results enable future studies of the causal architecture of human disease, which in turn should aid discovery of new...

  14. Atomic and molecular processes in fusion plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Janev, R.K. [International Atomic Energy Agency, Vienna (Austria)

    1997-01-01

    The role of atomic and molecular processes in achieving and maintaining the conditions for thermonuclear burn in a magnetically confined fusion plasma is described. Emphasis is given to the energy balance and power and particle exhaust issues. The most important atomic and molecular processes which affect the radiation losses and impurity transport in the core plasma, the neutral particle transport in the plasma edge and the radiative cooling of divertor plasmas are discussed in greater detail. (author)

  15. Fundamental Processes in Plasmas. Final report

    International Nuclear Information System (INIS)

    O'Neil, Thomas M.; Driscoll, C. Fred

    2009-01-01

    This research focuses on fundamental processes in plasmas, and emphasizes problems for which precise experimental tests of theory can be obtained. Experiments are performed on non-neutral plasmas, utilizing three electron traps and one ion trap with a broad range of operating regimes and diagnostics. Theory is focused on fundamental plasma and fluid processes underlying collisional transport and fluid turbulence, using both analytic techniques and medium-scale numerical simulations. The simplicity of these systems allows a depth of understanding and a precision of comparison between theory and experiment which is rarely possible for neutral plasmas in complex geometry. The recent work has focused on three areas in basic plasma physics. First, experiments and theory have probed fundamental characteristics of plasma waves: from the low-amplitude thermal regime, to inviscid damping and fluid echoes, to cold fluid waves in cryogenic ion plasmas. Second, the wide-ranging effects of dissipative separatrices have been studied experimentally and theoretically, finding novel wave damping and coupling effects and important plasma transport effects. Finally, correlated systems have been investigated experimentally and theoretically: UCSD experients have now measured the Salpeter correlation enhancement, and theory work has characterized the 'guiding center atoms of antihydrogen created at CERN

  16. Effect of PbI{sub 2} deposition rate on two-step PVD/CVD all-vacuum prepared perovskite

    Energy Technology Data Exchange (ETDEWEB)

    Ioakeimidis, Apostolos; Christodoulou, Christos; Lux-Steiner, Martha; Fostiropoulos, Konstantinos, E-mail: fostiropoulos@helmholtz-berlin.de

    2016-12-15

    In this work we fabricate all-vacuum processed methyl ammonium lead halide perovskite by a sequence of physical vapour deposition of PbI{sub 2} and chemical vapour deposition (CVD) of CH{sub 3}NH{sub 3}I under a static atmosphere. We demonstrate that for higher deposition rate the (001) planes of PbI{sub 2} film show a higher degree of alignment parallel to the sample's surface. From X-ray diffraction data of the resulted perovskite film we derive that the intercalation rate of CH{sub 3}NH{sub 3}I is fostered for PbI{sub 2} films with higher degree of (001) planes alignment. The stoichiometry of the produced perovskite film is also studied by Hard X-ray photoelectron spectroscopy measurements. Complete all-vacuum perovskite solar cells were fabricated on glass/ITO substrates coated by an ultra-thin (5 nm) Zn-phthalocyanine film as hole selective layer. A dependence of residual PbI{sub 2} on the solar cells performance is displayed, while photovoltaic devices with efficiency up to η=11.6% were achieved. - Graphical abstract: A two-step PVD/CVD processed perovskite film with the CVD intercalation rate of CH{sub 3}NCH{sub 3} molecules been fostered by increasing the PVD rate of PbI{sub 2} and prolonging the CVD time. - Highlights: • A simple PVD/CVD process for perovskite film production. • Increased PVD rate yields better alignment of the PbI{sub 2} (001) crystallite planes. • CH{sub 3}NH{sub 3}I intercalation process fostered by increased PbI{sub 2} PVD rate. • Stoichiometric CH{sub 3}NH{sub 3}PbI{sub 3} suitable as absorber in photovoltaic applications • Reduced PbI{sub 2} residue at the bottom of CH{sub 3}NH{sub 3}PbI{sub 3} improves device performance.

  17. Direct deposition of patterned nanocrystalline CVD diamond using an electrostatic self-assembly method with nanodiamond particles

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung-Koo; Kim, Jong-Hoon; Jeong, Min-Goon; Lim, Dae-Soon [Department of Materials Science and Engineering, Korea University, Anam-Dong 5-1, Seoungbuk-Ku, Seoul 136-713 (Korea, Republic of); Song, Min-Jung, E-mail: dslim@korea.ac.kr [Center for Advanced Device Materials, Korea University, Anam-Dong 5-1, Seoungbuk-Ku, Seoul 136-713 (Korea, Republic of)

    2010-12-17

    Micron-sized and precise patterns of nanocrystalline CVD diamond were fabricated successfully on substrates using dispersed nanodiamond particles, charge connection by electrostatic self-assembly, and photolithography processes. Nanodiamond particles which had been dispersed using an attritional milling system were attached electrostatically on substrates as nuclei for diamond growth. In this milling process, poly sodium 4-styrene sulfonate (PSS) was added as an anionic dispersion agent to produce the PSS/nanodiamond conjugates. Ultra dispersed nanodiamond particles with a {zeta}-potential and average particle size of - 60.5 mV and {approx} 15 nm, respectively, were obtained after this milling process. These PSS/nanodiamond conjugates were attached electrostatically to a cationic polyethyleneimine (PEI) coated surface on to which a photoresist had been patterned in an aqueous solution of the PSS/nanodiamond conjugated suspension. A selectively seeded area was formed successfully using the above process. A hot filament chemical vapor deposition system was used to synthesize the nanocrystalline CVD diamond on the seeded area. Micron-sized, thin and precise nanocrystalline CVD diamond patterns with a high nucleation density (3.8 {+-} 0.4 x 10{sup 11} cm{sup -2}) and smooth surface were consequently fabricated.

  18. Direct deposition of patterned nanocrystalline CVD diamond using an electrostatic self-assembly method with nanodiamond particles

    International Nuclear Information System (INIS)

    Lee, Seung-Koo; Kim, Jong-Hoon; Jeong, Min-Goon; Lim, Dae-Soon; Song, Min-Jung

    2010-01-01

    Micron-sized and precise patterns of nanocrystalline CVD diamond were fabricated successfully on substrates using dispersed nanodiamond particles, charge connection by electrostatic self-assembly, and photolithography processes. Nanodiamond particles which had been dispersed using an attritional milling system were attached electrostatically on substrates as nuclei for diamond growth. In this milling process, poly sodium 4-styrene sulfonate (PSS) was added as an anionic dispersion agent to produce the PSS/nanodiamond conjugates. Ultra dispersed nanodiamond particles with a ζ-potential and average particle size of - 60.5 mV and ∼ 15 nm, respectively, were obtained after this milling process. These PSS/nanodiamond conjugates were attached electrostatically to a cationic polyethyleneimine (PEI) coated surface on to which a photoresist had been patterned in an aqueous solution of the PSS/nanodiamond conjugated suspension. A selectively seeded area was formed successfully using the above process. A hot filament chemical vapor deposition system was used to synthesize the nanocrystalline CVD diamond on the seeded area. Micron-sized, thin and precise nanocrystalline CVD diamond patterns with a high nucleation density (3.8 ± 0.4 x 10 11 cm -2 ) and smooth surface were consequently fabricated.

  19. Evaluation of CVD silicon carbide for synchrotron radiation mirrors

    International Nuclear Information System (INIS)

    Takacs, P.Z.

    1981-07-01

    Chemical vapor deposited silicon carbide (CVD SiC) is a recent addition to the list of materials suitable for use in the harsh environment of synchrotron radiation (SR) beam lines. SR mirrors for use at normal incidence must be ultrahigh vacuum compatible, must withstand intense x-ray irradiation without surface damage, must be capable of being polished to an extremely smooth surface finish, and must maintain surface figure under thermal loading. CVD SiC exceeds the performance of conventional optical materials in all these areas. It is, however, a relatively new optical material. Few manufacturers have experience in producing optical quality material, and few opticians have experience in figuring and polishing the material. The CVD material occurs in a variety of forms, sensitively dependent upon reaction chamber production conditions. We are evaluating samples of CVD SiC obtained commercially from various manufacturers, representing a range of deposition conditions, to determine which types of CVD material are most suitable for superpolishing. At the time of this writing, samples are being polished by several commercial vendors and surface finish characteristics are being evaluated by various analytical methods

  20. Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers

    Science.gov (United States)

    Kohen, David; Vohra, Anurag; Loo, Roger; Vandervorst, Wilfried; Bhargava, Nupur; Margetis, Joe; Tolle, John

    2018-02-01

    Highly doped GeSn material is interesting for both electronic and optical applications. GeSn:B is a candidate for source-drain material in future Ge pMOS device because Sn adds compressive strain with respect to pure Ge, and therefore can boost the Ge channel performances. A high B concentration is required to obtain low contact resistivity between the source-drain material and the metal contact. To achieve high performance, it is therefore highly desirable to maximize both the Sn content and the B concentration. However, it has been shown than CVD-grown GeSn:B shows a trade-off between the Sn incorporation and the B concentration (increasing B doping reduces Sn incorporation). Furthermore, the highest B concentration of CVD-grown GeSn:B process reported in the literature has been limited to below 1 × 1020 cm-3. Here, we demonstrate a CVD process where B δ-doping layers are inserted in the GeSn layer. We studied the influence of the thickness between each δ-doping layers and the δ-doping layers process conditions on the crystalline quality and the doping density of the GeSn:B layers. For the same Sn content, the δ-doping process results in a 4-times higher B doping than the co-flow process. In addition, a B doping concentration of 2 × 1021 cm-3 with an active concentration of 5 × 1020 cm-3 is achieved.

  1. Polymer Adsorption on Graphite and CVD Graphene Surfaces Studied by Surface-Specific Vibrational Spectroscopy.

    Science.gov (United States)

    Su, Yudan; Han, Hui-Ling; Cai, Qun; Wu, Qiong; Xie, Mingxiu; Chen, Daoyong; Geng, Baisong; Zhang, Yuanbo; Wang, Feng; Shen, Y R; Tian, Chuanshan

    2015-10-14

    Sum-frequency vibrational spectroscopy was employed to probe polymer contaminants on chemical vapor deposition (CVD) graphene and to study alkane and polyethylene (PE) adsorption on graphite. In comparing the spectra from the two surfaces, it was found that the contaminants on CVD graphene must be long-chain alkane or PE-like molecules. PE adsorption from solution on the honeycomb surface results in a self-assembled ordered monolayer with the C-C skeleton plane perpendicular to the surface and an adsorption free energy of ∼42 kJ/mol for PE(H(CH2CH2)nH) with n ≈ 60. Such large adsorption energy is responsible for the easy contamination of CVD graphene by impurity in the polymer during standard transfer processes. Contamination can be minimized with the use of purified polymers free of PE-like impurities.

  2. Plasma processing of superconducting radio frequency cavities

    Science.gov (United States)

    Upadhyay, Janardan

    The development of plasma processing technology of superconducting radio frequency (SRF) cavities not only provides a chemical free and less expensive processing method, but also opens up the possibility for controlled modification of the inner surfaces of the cavity for better superconducting properties. The research was focused on the transition of plasma etching from two dimensional flat surfaces to inner surfaces of three dimensional (3D) structures. The results could be applicable to a variety of inner surfaces of 3D structures other than SRF cavities. Understanding the Ar/Cl2 plasma etching mechanism is crucial for achieving the desired modification of Nb SRF cavities. In the process of developing plasma etching technology, an apparatus was built and a method was developed to plasma etch a single cell Pill Box cavity. The plasma characterization was done with the help of optical emission spectroscopy. The Nb etch rate at various points of this cavity was measured before processing the SRF cavity. Cylindrical ring-type samples of Nb placed on the inner surface of the outer wall were used to measure the dependence of the process parameters on plasma etching. The measured etch rate dependence on the pressure, rf power, dc bias, temperature, Cl2 concentration and diameter of the inner electrode was determined. The etch rate mechanism was studied by varying the temperature of the outer wall, the dc bias on the inner electrode and gas conditions. In a coaxial plasma reactor, uniform plasma etching along the cylindrical structure is a challenging task due to depletion of the active radicals along the gas flow direction. The dependence of etch rate uniformity along the cylindrical axis was determined as a function of process parameters. The formation of dc self-biases due to surface area asymmetry in this type of plasma and its variation on the pressure, rf power and gas composition was measured. Enhancing the surface area of the inner electrode to reduce the

  3. Langmuir-probe characterization of an inductively-coupled remote plasma system intended for CVD and ALD

    NARCIS (Netherlands)

    Boogaard, A.; Kovalgin, Alexeij Y.; Aarnink, Antonius A.I.; Wolters, Robertus A.M.; Holleman, J.; Brunets, I.; Schmitz, Jurriaan

    2006-01-01

    We measured electron density and electron energy distribution function (EEDS) vertically through our reactor for a range of process conditions and for various gases. The EEDF of Ar plasma in the reactor could largely be described by the Maxwell-Boltzmann distribution function, but it also contained

  4. Pulsed high-density plasmas for advanced dry etching processes

    International Nuclear Information System (INIS)

    Banna, Samer; Agarwal, Ankur; Cunge, Gilles; Darnon, Maxime; Pargon, Erwine; Joubert, Olivier

    2012-01-01

    Plasma etching processes at the 22 nm technology node and below will have to satisfy multiple stringent scaling requirements of microelectronics fabrication. To satisfy these requirements simultaneously, significant improvements in controlling key plasma parameters are essential. Pulsed plasmas exhibit considerable potential to meet the majority of the scaling challenges, while leveraging the broad expertise developed over the years in conventional continuous wave plasma processing. Comprehending the underlying physics and etching mechanisms in pulsed plasma operation is, however, a complex undertaking; hence the full potential of this strategy has not yet been realized. In this review paper, we first address the general potential of pulsed plasmas for plasma etching processes followed by the dynamics of pulsed plasmas in conventional high-density plasma reactors. The authors reviewed more than 30 years of academic research on pulsed plasmas for microelectronics processing, primarily for silicon and conductor etch applications, highlighting the potential benefits to date and challenges in extending the technology for mass-production. Schemes such as source pulsing, bias pulsing, synchronous pulsing, and others in conventional high-density plasma reactors used in the semiconductor industry have demonstrated greater flexibility in controlling critical plasma parameters such as ion and radical densities, ion energies, and electron temperature. Specifically, plasma pulsing allows for independent control of ion flux and neutral radicals flux to the wafer, which is key to eliminating several feature profile distortions at the nanometer scale. However, such flexibility might also introduce some difficulty in developing new etching processes based on pulsed plasmas. Therefore, the main characteristics of continuous wave plasmas and different pulsing schemes are compared to provide guidelines for implementing different schemes in advanced plasma etching processes based on

  5. Cardiovascular disease (CVD and chronic kidney disease (CKD event rates in HIV-positive persons at high predicted CVD and CKD risk: A prospective analysis of the D:A:D observational study.

    Directory of Open Access Journals (Sweden)

    Mark A Boyd

    2017-11-01

    Full Text Available The Data Collection on Adverse Events of Anti-HIV Drugs (D:A:D study has developed predictive risk scores for cardiovascular disease (CVD and chronic kidney disease (CKD, defined as confirmed estimated glomerular filtration rate [eGFR] ≤ 60 ml/min/1.73 m2 events in HIV-positive people. We hypothesized that participants in D:A:D at high (>5% predicted risk for both CVD and CKD would be at even greater risk for CVD and CKD events.We included all participants with complete risk factor (covariate data, baseline eGFR > 60 ml/min/1.73 m2, and a confirmed (>3 months apart eGFR 1%-5%, >5% and fitted Poisson models to assess whether CVD and CKD risk group effects were multiplicative. A total of 27,215 participants contributed 202,034 person-years of follow-up: 74% male, median (IQR age 42 (36, 49 years, median (IQR baseline year of follow-up 2005 (2004, 2008. D:A:D risk equations predicted 3,560 (13.1% participants at high CVD risk, 4,996 (18.4% participants at high CKD risk, and 1,585 (5.8% participants at both high CKD and high CVD risk. CVD and CKD event rates by predicted risk group were multiplicative. Participants at high CVD risk had a 5.63-fold (95% CI 4.47, 7.09, p < 0.001 increase in CKD events compared to those at low risk; participants at high CKD risk had a 1.31-fold (95% CI 1.09, 1.56, p = 0.005 increase in CVD events compared to those at low risk. Participants' CVD and CKD risk groups had multiplicative predictive effects, with no evidence of an interaction (p = 0.329 and p = 0.291 for CKD and CVD, respectively. The main study limitation is the difference in the ascertainment of the clinically defined CVD endpoints and the laboratory-defined CKD endpoints.We found that people at high predicted risk for both CVD and CKD have substantially greater risks for both CVD and CKD events compared with those at low predicted risk for both outcomes, and compared to those at high predicted risk for only CVD or CKD events. This suggests that CVD and

  6. Functional materials - Study of process for CVD SiC/C composite material

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Doo Jin; Wang, Chae Chyun; Lee, Young Jin; Oh, Byung Jun [Yonsei University, Seoul (Korea)

    2000-04-01

    The CVD SiC coating techniques are the one of high functional material manufactures that improve the thermal, wear, oxidization and infiltration resistance of the surface of raw materials and extend the life of material. Silicon carbide films have been grown onto graphite substrates by low pressure chemical vapor deposition using MTS(CH{sub 3}SiCl{sub 3}) as a source precursor and H{sub 2} or N{sub 2} as a diluent gas. The experiments for temperature and diluent gas addition changes were performed. The effect of temperature from 900 deg. C to 1350 deg. C and the alteration of diluent gas species on the growth rate and structure of deposits have been studied. The experimental results showed that the deposition rate increased with increasing deposition temperature irrespective of diluent gases and reactant depletion effect increased especially at H{sub 2} diluent gas ambient. As the diluent gas added, the growth rate decreased parabolically. For N{sub 2} addition, surface morphology of leaf-like structure appeared, and for H{sub 2}, faceted structure at 1350 deg. C. The observed features were involved by crystalline phase of {beta}-SiC and surface composition with different gas ambient. We also compared the experimental results of the effect of partial pressure on the growth rate with the results of theoretical approach based on the Langmuir-Hinshelwood model. C/SiC composites were prepared by isothermal chemical vapor infiltration (ICVI). In order to fabricate the more dense C/SiC composites, a novel process of the in-situ whisker growing and filling during ICVI was devised, which was manipulated by alternating dilute gas species. The denser C/SiC composites were successfully prepared by the novel process comparing with the conventional ICVI process. 64 refs., 36 figs., 5 tabs. (Author)

  7. Lower Plasma Fetuin-A Levels Are Associated With a Higher Mortality Risk in Patients With Coronary Artery Disease.

    Science.gov (United States)

    Chen, Xuechen; Zhang, Yuan; Chen, Qian; Li, Qing; Li, Yanping; Ling, Wenhua

    2017-11-01

    The present study was designed to evaluate the association of circulating fetuin-A with cardiovascular disease (CVD) and all-cause mortality. We measured plasma fetuin-A in 1620 patients using an enzyme-linked immunosorbent assay kit. The patients were members of the Guangdong coronary artery disease cohort and were recruited between October 2008 and December 2011. Cox regression models were used to estimate the association between plasma fetuin-A and the risk of mortality. A total of 206 deaths were recorded during a median follow-up of 5.9 years, 146 of whom died from CVD. The hazard ratios for the second and third tertiles of the fetuin-A levels (using the first tertile as a reference) were 0.65 (95% confidence interval, 0.44-0.96) and 0.51 (95% confidence interval, 0.33-0.78) for CVD mortality ( P =0.005) and 0.65 (95% confidence interval, 0.47-0.91) and 0.48 (95% confidence interval, 0.33-0.70) for all-cause mortality ( P <0.001), respectively. Lower plasma fetuin-A levels were associated with an increased risk of all-cause and CVD mortality in patients with coronary artery disease independently of traditional CVD risk factors. © 2017 American Heart Association, Inc.

  8. Experiment and equipment of depositing diamond films with CVD system

    International Nuclear Information System (INIS)

    Xie Erqing; Song Chang'an

    2002-01-01

    CVD (chemical vapor deposition) emerged in recent years is a new technique for thin film deposition, which play a key role in development of modern physics. It is important to predominate the principle and technology of CVD for studying modern physics. In this paper, a suit of CVD experimental equipment for teaching in college physics is presented, which has simple design and low cost. The good result was gained in past teaching practices

  9. Development Status of a CVD System to Deposit Tungsten onto UO2 Powder via the WCI6 Process

    Science.gov (United States)

    Mireles, O. R.; Kimberlin, A.; Broadway, J.; Hickman, R.

    2014-01-01

    Nuclear Thermal Propulsion (NTP) is under development for deep space exploration. NTP's high specific impulse (> 850 second) enables a large range of destinations, shorter trip durations, and improved reliability. W-60vol%UO2 CERMET fuel development efforts emphasize fabrication, performance testing and process optimization to meet service life requirements. Fuel elements must be able to survive operation in excess of 2850 K, exposure to flowing hydrogen (H2), vibration, acoustic, and radiation conditions. CTE mismatch between W and UO2 result in high thermal stresses and lead to mechanical failure as a result UO2 reduction by hot hydrogen (H2) [1]. Improved powder metallurgy fabrication process control and mitigated fuel loss can be attained by coating UO2 starting powders within a layer of high density tungsten [2]. This paper discusses the advances of a fluidized bed chemical vapor deposition (CVD) system that utilizes the H2-WCl6 reduction process.

  10. Automated Plasma Spray (APS) process feasibility study: Plasma spray process development and evaluation

    Science.gov (United States)

    Fetheroff, C. W.; Derkacs, T.; Matay, I. M.

    1979-01-01

    An automated plasma spray (APS) process was developed to apply two layer (NiCrAlY and ZrO2-12Y2O3) thermal-barrier coatings to aircraft gas turbine engine blade airfoils. The APS process hardware consists of four subsystems: a mechanical blade positioner incorporating two interlaced six-degree-of-freedom assemblies; a noncoherent optical metrology subsystem; a microprocessor-based adaptive system controller; and commercial plasma spray equipment. Over fifty JT9D first stage turbine blades specimens were coated with the APS process in preliminary checkout and evaluation studies. The best of the preliminary specimens achieved an overall coating thickness uniformity of + or - 53 micrometers, much better than is achievable manually. Factors limiting this performance were identified and process modifications were initiated accordingly. Comparative evaluations of coating thickness uniformity for manually sprayed and APS coated specimens were initiated. One of the preliminary evaluation specimens was subjected to a torch test and metallographic evaluation.

  11. Electrocatalysts with platinum, cobalt and nickel preparations by mechanical alloyed and CVD for the reaction of oxygen reduction; Electrocatalizadores a base de platino, cobalto y niquel preparados por aleado mecanico y CVD para la reaccion de reduccion de oxigeno

    Energy Technology Data Exchange (ETDEWEB)

    Garcia C, M A [ININ, 52750 La Marquesa, Estado de Mexico (Mexico)

    2008-07-01

    In this research, the molecular oxygen reduction reaction (ORR) was investigated on electrocatalysts of Co, Ni, Pt and their alloys CoNi, PtCo, PtNi and PtCoNi by using H{sub 2}SO{sub 4} 0.5 and KOH 0.5 M solutions as electrolytes. The electrocatalysts were synthesized by Mechanical Alloying (MA) and Chemical Vapor Deposition (CVD) processes. For MA, metallic powders were processed during 20 h of milling in a high energy SPEX 8000 mill. For CVD, a hot-wall reactor was utilized and Co, Ni and Pt acetilactetonates were used as precursors. Films were deposited at a total pressure of 1 torr and temperatures of 400-450 C. Electrocatalysts were characterized by X-Ray Diffraction (XRD). Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Energy Dispersive X-Ray Spectroscopy (EDS). Electrocatalysts prepared by mechanical alloying showed a homogeneously dispersed agglomeration of particles with nano metric size. Electrocatalysts obtained by CVD showed, in some cases, non uniform films, with particles of nano metric size, as well. The electrocatalytic performance was evaluated by using the Rotating Disk Electrode technique (RDE). Electrocatalysts prepared by MA showed higher activity than those obtained by CVD. All electrocatalysts were evaluated in alkaline media. Only electrocatalysts containing Pt were evaluated in acid media, because those materials with Co, Ni and their alloys showed instability in acidic media. Most electrocatalysts followed a mechanism for the ORR producing a certain proportion of H{sub 2}O{sub 2}. All electrocatalysts, exhibited a fair or good electrocatalytic activity in comparison with other similar reported materials. It was found that MA and CVD are appropriate processes to prepare electrocatalysts for the ORR with particles of nano metric size and performing with an acceptable catalytic activity. PtCoNi 70-23-7% by MA and PtCoNi-CVD electrocatalysts showed the highest activity in alkaline media, while in acidic

  12. Radiant-and-plasma technology for coal processing

    Directory of Open Access Journals (Sweden)

    Vladimir Messerle

    2012-12-01

    Full Text Available Radiant-and-plasma technology for coal processing is presented in the article. Thermodynamic computation and experiments on plasma processing of bituminous coal preliminary electron-beam activated were fulfilled in comparison with plasma processing of the coal. Positive influence of the preliminary electron-beam activation of coal on synthesis gas yield was found. Experiments were carried out in the plasma gasifier of 100 kW power. As a result of the measurements of material and heat balance of the process gave the following integral indicators: weight-average temperature of 2200-2300 K, and carbon gasification degree of 82,4-83,2%. Synthesis gas yield at thermochemical preparation of raw coal dust for burning was 24,5% and in the case of electron-beam activation of coal synthesis gas yield reached 36,4%, which is 48% higher.

  13. Preparation of tantalum-based alloys by a unique CVD process

    International Nuclear Information System (INIS)

    Bryant, W.A.; Meier, G.H.

    1975-01-01

    One of the greatest problems associated with the formation of alloys by CVD is the achievement of compositional uniformity. In a typical deposition apparatus, wherein reactant gases are made to flow over the substrate in a continuous manner, this nonuniformity is inherent for two reasons. The composition of the gas stream changes as a function of its distance of travel over the substrate and, inevitably, one of the reactant compounds is more easily reduced than the other(s). This problem was overcome by the development of a process termed ''pulsing.'' In it reactant gases are periodically injected into a previously evacuated reaction chamber where they cover the substrate almost instantaneously. By this technique, gas composition at any point in time is not dependent upon distance along the substrate. Formation of alternating layers of the alloy components and subsequent homogenization allows the formation of an alloy of uniform composition with the composition being determined by the duration and relative number of the various cycles. This technique has been utilized to produce dense alloys with the composition Ta--10 wt percent W by depositing alternating layers of TA and W by the hydrogen reduction of TaCl 5 and WCl 6 . The alloys were uniform in thickness and composition over lengths in excess of 20 cm and the target composition was attained. A similar attempt to deposit a Ta--8 wt percent W--2 wt percent Hf alloy was unsuccessful because of the difficulty in reducing HfCl 4 at temperatures below those at which gas phase nucleation of Ta and W occurred (1200 and 1175 0 C respectively). 7 fig

  14. Plasma Processing of Model Residential Solid Waste

    Science.gov (United States)

    Messerle, V. E.; Mossé, A. L.; Nikonchuk, A. N.; Ustimenko, A. B.; Baimuldin, R. V.

    2017-09-01

    The authors have tested the technology of processing of model residential solid waste. They have developed and created a pilot plasma unit based on a plasma chamber incinerator. The waste processing technology has been tested and prepared for commercialization.

  15. On improved understanding of plasma-chemical processes in complex low-temperature plasmas

    Science.gov (United States)

    Röpcke, Jürgen; Loffhagen, Detlef; von Wahl, Eric; Nave, Andy S. C.; Hamann, Stephan; van Helden, Jean-Piere H.; Lang, Norbert; Kersten, Holger

    2018-05-01

    Over the last years, chemical sensing using optical emission spectroscopy (OES) in the visible spectral range has been combined with methods of mid infrared laser absorption spectroscopy (MIR-LAS) in the molecular fingerprint region from 3 to 20 μm, which contains strong rotational-vibrational absorption bands of a large variety of gaseous species. This optical approach established powerful in situ diagnostic tools to study plasma-chemical processes of complex low-temperature plasmas. The methods of MIR-LAS enable to detect stable and transient molecular species in ground and excited states and to measure the concentrations and temperatures of reactive species in plasmas. Since kinetic processes are inherent to discharges ignited in molecular gases, high time resolution on sub-second timescales is frequently desired for fundamental studies as well as for process monitoring in applied research and industry. In addition to high sensitivity and good temporal resolution, the capacity for broad spectral coverage enabling multicomponent detection is further expanding the use of OES and MIR-LAS techniques. Based on selected examples, this paper reports on recent achievements in the understanding of complex low-temperature plasmas. Recently, a link with chemical modeling of the plasma has been provided, which is the ultimate objective for a better understanding of the chemical and reaction kinetic processes occurring in the plasma. Contribution to the Topical Issue "Fundamentals of Complex Plasmas", edited by Jürgen Meichsner, Michael Bonitz, Holger Fehske, Alexander Piel.

  16. 16. Hot dense plasma atomic processes

    International Nuclear Information System (INIS)

    Werner, Dappen; Totsuji, H.; Nishii, Y.

    2002-01-01

    This document gathers 13 articles whose common feature is to deal with atomic processes in hot plasmas. Density functional molecular dynamics method is applied to the hydrogen plasma in the domain of liquid metallic hydrogen. The effects of the density gradient are taken into account in both the electronic kinetic energy and the exchange energy and it is shown that they almost cancel with each other, extending the applicability of the Thomas-Fermi-Dirac approximation to the cases where the density gradient is not negligible. Another article reports about space and time resolved M-shell X-ray measurements of a laser-produced gas jet xenon plasma. Plasma parameters have been measured by ion acoustic and electron plasma waves Thomson scattering. Photo-ionization becomes a dominant atomic process when the density and the temperature of plasmas are relatively low and when the plasma is submitted to intense external radiation. It is shown that 2 plasmas which have a very different density but have the same ionization parameters, are found in a similar ionization state. Most radiation hydrodynamics codes use radiative opacity data from available libraries of atomic data. Several articles are focused on the determination of one group Rosseland and Planck mean analytical formulas for several single elements used in inertial fusion targets. In another paper the plasma density effect on population densities, effective ionization, recombination rate coefficients and on emission lines from carbon and Al ions in hot dense plasma, is studied. The last article is devoted to a new atomic model in plasmas that considers the occupation probability of the bound state and free state density in the presence of the plasma micro-field. (A.C.)

  17. Treatment with liraglutide may improve markers of CVD reflected by reduced levels of apoB

    Science.gov (United States)

    Engelbrechtsen, L.; Lundgren, J.; Wewer Albrechtsen, N. J.; Mahendran, Y.; Iepsen, E. W.; Finocchietto, P.; Jonsson, A. E.; Madsbad, S.; Holst, J. J.; Vestergaard, H.; Hansen, T.

    2017-01-01

    Summary Background Dislipidaemia and increased levels of apolipoprotein B (apoB) in individuals with obesity are risk factors for development of cardiovascular disease (CVD). The aim of this study was to investigate the effect of weight loss and weight maintenance with and without liraglutide treatment on plasma lipid profiles and apoB. Methods Fifty‐eight individuals with obesity (body mass index 34.5 ± 3.0 kg/m2 [mean ± SD]) were included in this study. After 8 weeks on a very low‐calorie diet (800 kcal/day), participants were randomized to weight maintenance with meal replacements with or without liraglutide (1.2 mg daily) for 1 year. Plasma samples from before and after weight loss and after 1 year of weight maintenance were subjected to nuclear magnetic resonance‐based lipidomics analysis. Results After an 8‐week low‐calorie diet, study participants lost 12.0 ± 2.9 kg (mean ± SD) of their body weight, which was reflected in their lipid profiles (80 out of 124 lipids changed significantly), including reduced levels of apoB, total cholesterol, free cholesterol, remnant cholesterol, triglycerides, low‐density lipoprotein and very low‐density lipoprotein subclasses. After 1 year of maintained weight loss, the majority of the lipids had returned to pre‐weight loss levels even though weight loss was successfully maintained in both groups. Interestingly, apoB levels remained low in the liraglutide treated group (apoB change: 0.03 ± 0.02 mmol/L, p = 0.4) in contrast to an increase in the control group (apoB change: 0.06 ± 0.07 mmol/L, p = 0.02). Conclusion An 8‐week low‐calorie diet, in individuals with obesity, reduced plasma levels of lipids and the atherogenic marker apoB. After 1 year of weight maintenance, only study participants treated with liraglutide maintained reduced levels of apoB, despite similar body weight maintenance. Treatment with liraglutide may therefore reduce apoB levels and thus reflect lower

  18. Application of Cat-CVD for ULSI technology

    International Nuclear Information System (INIS)

    Akasaka, Yoichi

    2008-01-01

    The ULSI technology has been following Moore's law into the sub-100 nm era, although several challenging technical issues must be resolved. This paper describes possible application of Cat-CVD for ULSI technology beyond the 45 nm node. Especially, Cat-CVD SiN film for a transistor gate sidewall and/or a pre-metallic liner layer, and removal of photo resist (ash) by Cat-induced hydrogen atoms in the interconnect structure with an extreme low-k material are mainly discussed

  19. Plasma Ceramides, Mediterranean Diet, and Incident Cardiovascular Disease in the PREDIMED Trial (Prevención con Dieta Mediterránea).

    Science.gov (United States)

    Wang, Dong D; Toledo, Estefanía; Hruby, Adela; Rosner, Bernard A; Willett, Walter C; Sun, Qi; Razquin, Cristina; Zheng, Yan; Ruiz-Canela, Miguel; Guasch-Ferré, Marta; Corella, Dolores; Gómez-Gracia, Enrique; Fiol, Miquel; Estruch, Ramón; Ros, Emilio; Lapetra, José; Fito, Montserrat; Aros, Fernando; Serra-Majem, Luis; Lee, Chih-Hao; Clish, Clary B; Liang, Liming; Salas-Salvadó, Jordi; Martínez-González, Miguel A; Hu, Frank B

    2017-05-23

    Although in vitro studies and investigations in animal models and small clinical populations have suggested that ceramides may represent an intermediate link between overnutrition and certain pathological mechanisms underlying cardiovascular disease (CVD), no prospective studies have investigated the association between plasma ceramides and risk of CVD. The study population consisted of 980 participants from the PREDIMED trial (Prevención con Dieta Mediterránea), including 230 incident cases of CVD and 787 randomly selected participants at baseline (including 37 overlapping cases) followed for ≤7.4 years. Participants were randomized to a Mediterranean diet supplemented with extra virgin olive oil, a Mediterranean diet supplemented with nuts, or a control diet. Plasma ceramide concentrations were measured on a liquid chromatography tandem mass spectrometry metabolomics platform. The primary outcome was a composite of nonfatal acute myocardial infarction, nonfatal stroke, or cardiovascular death. Hazard ratios were estimated with weighted Cox regression models using Barlow weights to account for the case-cohort design. The multivariable hazard ratios (HR) and 95% confidence intervals (CIs) comparing the extreme quartiles of plasma concentrations of C16:0, C22:0, C24:0, and C24:1 ceramides were 2.39 (1.49-3.83, P trend Mediterranean diet and control groups during the first year of follow-up. Our study documented a novel positive association between baseline plasma ceramide concentrations and incident CVD. In addition, a Mediterranean dietary intervention may mitigate potential deleterious effects of elevated plasma ceramide concentrations on CVD. URL: http://www.isrctn.com. Unique identifier: ISRCTN35739639. © 2017 American Heart Association, Inc.

  20. Ballistic Josephson junctions based on CVD graphene

    Science.gov (United States)

    Li, Tianyi; Gallop, John; Hao, Ling; Romans, Edward

    2018-04-01

    Josephson junctions with graphene as the weak link between superconductors have been intensely studied in recent years, with respect to both fundamental physics and potential applications. However, most of the previous work was based on mechanically exfoliated graphene, which is not compatible with wafer-scale production. To overcome this limitation, we have used graphene grown by chemical vapour deposition (CVD) as the weak link of Josephson junctions. We demonstrate that very short, wide CVD-graphene-based Josephson junctions with Nb electrodes can work without any undesirable hysteresis in their electrical characteristics from 1.5 K down to a base temperature of 320 mK, and their gate-tuneable critical current shows an ideal Fraunhofer-like interference pattern in a perpendicular magnetic field. Furthermore, for our shortest junctions (50 nm in length), we find that the normal state resistance oscillates with the gate voltage, consistent with the junctions being in the ballistic regime, a feature not previously observed in CVD-graphene-based Josephson junctions.

  1. Electrostatic double layers and a plasma evacuation process

    International Nuclear Information System (INIS)

    Raadu, M.A.; Carlqvist, P.

    1979-12-01

    An evacuation process due to the growth of current driven instabilities in a plasma is discussed. The process, which leads to localized extreme density reductions, is related to the formation of electrostatic double layers. The initial linear phase is treated using the superposition of unstable plasma waves. In the long wave length, non-dispersive limit a density dip, which is initially present as a small disturbance, grows rapidly and remains localized in the plasma. The process works for a variety of plasma conditions provided a certain current density is exceeded. For a particular choice of plasma parameters the non-linear development is followed, by solving the coupled Vlasov-Poisson equations by finite difference methods. The evacuation process is found to work even more effectively in the non-linear phase and leads to an extreme density reduction within the dip. It is suggested that the growth of such structures produces weak points within the plasma that can lead to the formation of double layers. (Auth.)

  2. Transport processes in space plasmas

    International Nuclear Information System (INIS)

    Birn, J.; Elphic, R.C.; Feldman, W.C.

    1997-01-01

    This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project represents a comprehensive research effort to study plasma and field transport processes relevant for solar-terrestrial interaction, involving the solar wind and imbedded magnetic field and plasma structures, the bow shock of the Earth's magnetosphere and associated waves, the Earth's magnetopause with imbedded flux rope structures and their connection with the Earth, plasma flow in the Earth's magnetotail, and ionospheric beam/wave interactions. The focus of the work was on the interaction between plasma and magnetic and electric fields in the regions where different plasma populations exist adjacent to or superposed on each other. These are the regions of particularly dynamic plasma behavior, important for plasma and energy transport and rapid energy releases. The research addressed questions about how this interaction takes place, what waves, instabilities, and particle/field interactions are involved, how the penetration of plasma and energy through characteristic boundaries takes place, and how the characteristic properties of the plasmas and fields of the different populations influence each other on different spatial and temporal scales. These topics were investigated through combining efforts in the analysis of plasma and field data obtained through space missions with theory and computer simulations of the plasma behavior

  3. Low temperature diamond growth by linear antenna plasma CVD over large area

    International Nuclear Information System (INIS)

    Izak, Tibor; Babchenko, Oleg; Potocky, Stepan; Kromka, Alexander; Varga, Marian

    2012-01-01

    Recently, there is a great effort to increase the deposition area and decrease the process temperature for diamond growth which will enlarge its applications including use of temperature sensitive substrates. In this work, we report on the large area (20 x 30 cm 2 ) and low temperature (250 C) polycrystalline diamond growth by pulsed linear antenna microwave plasma system. The influence of substrate temperature varied from 250 to 680 C, as controlled by the table heater and/or by microwave power, is studied. It was found that the growth rate, film morphology and diamond to non-diamond phases (sp 3 /sp 2 carbon bonds) are influenced by the growth temperature, as confirmed by SEM and Raman measurements. The surface chemistry and growth processes were studied in terms of activation energies (E a ) calculated from Arrhenius plots. The activation energies of growth processes were very low (1.7 and 7.8 kcal mol -1 ) indicating an energetically favourable growth process from the CO 2 -CH 4 -H 2 gas mixture. In addition, from activation energies two different growth regimes were observed at low and high temperatures, indicating different growth mechanism. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Non-equilibrium plasma reactor for natrual gas processing

    International Nuclear Information System (INIS)

    Shair, F.H.; Ravimohan, A.L.

    1974-01-01

    A non-equilibrium plasma reactor for natural gas processing into ethane and ethylene comprising means of producing a non-equilibrium chemical plasma wherein selective conversion of the methane in natural gas to desired products of ethane and ethylene at a pre-determined ethane/ethylene ratio in the chemical process may be intimately controlled and optimized at a high electrical power efficiency rate by mixing with a recycling gas inert to the chemical process such as argon, helium, or hydrogen, reducing the residence time of the methane in the chemical plasma, selecting the gas pressure in the chemical plasma from a wide range of pressures, and utilizing pulsed electrical discharge producing the chemical plasma. (author)

  5. Submillimeter Spectroscopic Study of Semiconductor Processing Plasmas

    Science.gov (United States)

    Helal, Yaser H.

    Plasmas used for manufacturing processes of semiconductor devices are complex and challenging to characterize. The development and improvement of plasma processes and models rely on feedback from experimental measurements. Current diagnostic methods are not capable of measuring absolute densities of plasma species with high resolution without altering the plasma, or without input from other measurements. At pressures below 100 mTorr, spectroscopic measurements of rotational transitions in the submillimeter/terahertz (SMM) spectral region are narrow enough in relation to the sparsity of spectral lines that absolute specificity of measurement is possible. The frequency resolution of SMM sources is such that spectral absorption features can be fully resolved. Processing plasmas are a similar pressure and temperature to the environment used to study astrophysical species in the SMM spectral region. Many of the molecular neutrals, radicals, and ions present in processing plasmas have been studied in the laboratory and their absorption spectra have been cataloged or are in the literature for the purpose of astrophysical study. Recent developments in SMM devices have made its technology commercially available for applications outside of specialized laboratories. The methods developed over several decades in the SMM spectral region for these laboratory studies are directly applicable for diagnostic measurements in the semiconductor manufacturing industry. In this work, a continuous wave, intensity calibrated SMM absorption spectrometer was developed as a remote sensor of gas and plasma species. A major advantage of intensity calibrated rotational absorption spectroscopy is its ability to determine absolute concentrations and temperatures of plasma species from first principles without altering the plasma environment. An important part of this work was the design of the optical components which couple 500 - 750 GHz radiation through a commercial inductively coupled plasma

  6. CVD and obesity in transitional Syria: a perspective from the Middle East.

    Science.gov (United States)

    Barakat, Hani; Barakat, Hanniya; Baaj, Mohamad K

    2012-01-01

    Syria is caught in the middle of a disruptive nutritional transition. Its healthcare system is distracted by challenges and successes in other areas while neglecting to address the onslaught of Syria's cardiovascular disease (CVD) epidemic. Despite the official viewpoint touting improvement in health indicators, current trends jeopardize population health, and several surveys in the Syrian population signal the epidemic spreading far and wide. The goal is to counteract the indifference towards obesity as a threat to Syrian's health, as the country is slowly becoming a leader in CVD mortality globally. PubMed, World Health Organization, and official government websites were searched for primary surveys in Syria related to CVD morbidity, mortality, and risk factors. Inclusion criteria ensured that results maximized relevance while producing comparable studies. Statistical analysis was applied to detect the most common risk factor and significant differences in risk factor prevalence and CVD rates. Obesity remained the prevailing CVD risk factor except in older Syrian men, where smoking and hypertension were more common. CVD mortality was more common in males due to coronary disease, while stroke dominated female mortality. The young workforce is especially impacted, with 50% of CVD mortality occurring before age 65 years and an 81% prevalence of obesity in women over 45 years. Syria can overcome its slow response to the CVD epidemic and curb further deterioration by reducing obesity and, thus, inheritance and clustering of risk factors. This can be achieved via multilayered awareness and intensive parental and familial involvement. Extinguishing the CVD epidemic is readily achievable as demonstrated in other countries.

  7. Fundamental atomic plasma chemistry for semiconductor manufacturing process analysis

    International Nuclear Information System (INIS)

    Ventzek, P.L.G.; Zhang, D.; Stout, P.J.; Rauf, S.; Orlowski, M.; Kudrya, V.; Astapenko, V.; Eletskii, A.

    2002-01-01

    An absence of fundamental atomic plasma chemistry data (e.g. electron impact cross-sections) hinders the application of plasma process models in semiconductor manufacturing. Of particular importance is excited state plasma chemistry data for metallization applications. This paper describes important plasma chemistry processes in the context of high density plasmas for metallization application and methods for the calculation of data for the study of these processes. Also discussed is the development of model data sets that address computational tractability issues. Examples of model electron impact cross-sections for Ni reduced from multiple collision processes are presented

  8. Some new radiation processes in plasmas

    International Nuclear Information System (INIS)

    Wu, C.S.

    1981-01-01

    Some new plasma radiation processes are reviewed, viz., (1) emission near the electron plasma frequency, (2) direct amplification of radiation near the electron cycloton frequency, and (3) parametic amplification of radiation by stimulated scattering. (L.C.) [pt

  9. CVD refractory metals and alloys for space nuclear power application

    International Nuclear Information System (INIS)

    Yang, L.; Gulden, T.D.; Watson, J.F.

    1984-01-01

    CVD technology has made significant contributions to the development of space nuclear power systems during the period 1962 to 1972. For the in-core thermionic concept, CVD technology is essential to the fabrication of the tungsten electron emitter. For the liquid metal cooled fuel pin using uranium nitride as fuel and T-111 and Nb-1 Zr as cladding, a tungsten barrier possibly produced by CVD methods is essential to the fuel-cladding compatibility at the designed operating temperature. Space power reactors may use heat pipes to transfer heat from the reactor core to the conversion system. CVD technology has been used for fabricating the heat pipe used as cross-flow heat exchanger, including the built-in channels on the condenser wall for liquid lithium return. 28 references, 17 figures

  10. Investigation of defects in CVD diamond: Influence for radiotherapy applications

    International Nuclear Information System (INIS)

    Guerrero, M.J.; Tromson, D.; Bergonzo, P.; Barrett, R.

    2005-01-01

    In this study we present the potentialities of CVD diamond as an ionisation chamber for radiotherapy applications. Trapping levels present in CVD diamond are characterised using Thermally Stimulated Current (TSC) method with X-ray sources. The influence of the corresponding defects on the detector response is investigated and compared to those observed in natural diamond. Also, their spatial distribution across a large area polycrystalline diamond ionisation chamber is discussed. Results show the relative influence of two different populations of trapping levels in CVD diamond whose effect is crucial for radiotherapy applications. To partially overcome the defect detrimental effects, we propose to use CVD diamond ionisation chambers at moderate temperatures from 70 to 100 deg. C that could be provided by self heating of the device, for a dramatically improved stability and reproducibility

  11. The formation of tritium permeation barriers by CVD

    International Nuclear Information System (INIS)

    Forcey, K.S.; Perujo, A.; Reiter, F.; Lolli-Ceroni, P.L.

    1993-01-01

    The effectiveness as permeation barriers of the following CVD coatings have been investigated: TiC (1 to 2 μm in thickness); a bi-layer of TiN on TiC (3 μm total thickness) and CVD Al 2 O 3 on a TiN/TiC bi-layer. The substrate materials were TZM (a Mo alloy) and 316L stainless steel in the form of discs of diameter 48 mm and thickness 0.1 or 1 mm. Permeation measurements were performed in the temperature range 515-742 K using deuterium at pressures in the range 1-50 kPa. CVD layers were shown to form reasonably effective permeation barriers. At a temperature of 673 K TiC is around 6000 times less permeable to deuterium than 316L stainless steel. (orig.)

  12. Surface studies of plasma processed Nb samples

    International Nuclear Information System (INIS)

    Tyagi, Puneet V.; Doleans, Marc; Hannah, Brian S.; Afanador, Ralph; Stewart, Stephen; Mammosser, John; Howell, Matthew P; Saunders, Jeffrey W; Degraff, Brian D; Kim, Sang-Ho

    2015-01-01

    Contaminants present at top surface of superconducting radio frequency (SRF) cavities can act as field emitters and restrict the cavity accelerating gradient. A room temperature in-situ plasma processing technology for SRF cavities aiming to clean hydrocarbons from inner surface of cavities has been recently developed at the Spallation Neutron Source (SNS). Surface studies of the plasma-processed Nb samples by Secondary ion mass spectrometry (SIMS) and Scanning Kelvin Probe (SKP) showed that the NeO_2 plasma processing is very effective to remove carbonaceous contaminants from top surface and improves the surface work function by 0.5 to 1.0 eV.

  13. Monitoring non-thermal plasma processes for nanoparticle synthesis

    Science.gov (United States)

    Mangolini, Lorenzo

    2017-09-01

    Process characterization tools have played a crucial role in the investigation of dusty plasmas. The presence of dust in certain non-thermal plasma processes was first detected by laser light scattering measurements. Techniques like laser induced particle explosive evaporation and ion mass spectrometry have provided the experimental evidence necessary for the development of the theory of particle nucleation in silane-containing non-thermal plasmas. This review provides first a summary of these early efforts, and then discusses recent investigations using in situ characterization techniques to understand the interaction between nanoparticles and plasmas. The advancement of such monitoring techniques is necessary to fully develop the potential of non-thermal plasmas as unique materials synthesis and processing platforms. At the same time, the strong coupling between materials and plasma properties suggest that it is also necessary to advance techniques for the measurement of plasma properties while in presence of dust. Recent progress in this area will be discussed.

  14. Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

    Energy Technology Data Exchange (ETDEWEB)

    Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Duran, Alicia; Aparacio, Mario [Instituto de Cerámica y Vidrio, Consejo Superior de Investigaciones Científicas, Kelsen 5 (Campus de Cantoblanco), Madrid, 28049 (Spain)

    2014-05-01

    Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.

  15. Advanced oxide powders processing based on cascade plasma

    International Nuclear Information System (INIS)

    Solonenko, O P; Smirnov, A V

    2014-01-01

    Analysis of the potential advantages offered to thermal spraying and powder processing by the implementation of plasma torches with inter-electrode insert (IEI) or, in other words, cascade plasma torches (CPTs) is presented. The paper provides evidence that the modular designed single cathode CPT helps eliminate the following major disadvantages of conventional plasma torches: plasma parameters drifting, 1-5 kHz pulsing of plasma flow, as well as excessive erosion of electrodes. More stable plasma results in higher quality, homogeneity and reproducibility of plasma sprayed coatings and powders treated. In addition, CPT offers an extremely wide operating window, which allows better control of plasma parameters, particle dwell time and, consequently, particle temperature and velocity within a wide range by generating high enthalpy quasi-laminar plasmas, medium enthalpy transient plasmas, as well as relatively low enthalpy turbulent plasmas. Stable operation, flexibility with plasma gases as well as wide operating window of CPT should help significantly improve the existing plasma spraying processes and coatings, and also help develop new advanced technologies

  16. Electrocatalysts with platinum, cobalt and nickel preparations by mechanical alloyed and CVD for the reaction of oxygen reduction

    International Nuclear Information System (INIS)

    Garcia C, M. A.

    2008-01-01

    In this research, the molecular oxygen reduction reaction (ORR) was investigated on electrocatalysts of Co, Ni, Pt and their alloys CoNi, PtCo, PtNi and PtCoNi by using H 2 SO 4 0.5 and KOH 0.5 M solutions as electrolytes. The electrocatalysts were synthesized by Mechanical Alloying (MA) and Chemical Vapor Deposition (CVD) processes. For MA, metallic powders were processed during 20 h of milling in a high energy SPEX 8000 mill. For CVD, a hot-wall reactor was utilized and Co, Ni and Pt acetilactetonates were used as precursors. Films were deposited at a total pressure of 1 torr and temperatures of 400-450 C. Electrocatalysts were characterized by X-Ray Diffraction (XRD). Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Energy Dispersive X-Ray Spectroscopy (EDS). Electrocatalysts prepared by mechanical alloying showed a homogeneously dispersed agglomeration of particles with nano metric size. Electrocatalysts obtained by CVD showed, in some cases, non uniform films, with particles of nano metric size, as well. The electrocatalytic performance was evaluated by using the Rotating Disk Electrode technique (RDE). Electrocatalysts prepared by MA showed higher activity than those obtained by CVD. All electrocatalysts were evaluated in alkaline media. Only electrocatalysts containing Pt were evaluated in acid media, because those materials with Co, Ni and their alloys showed instability in acidic media. Most electrocatalysts followed a mechanism for the ORR producing a certain proportion of H 2 O 2 . All electrocatalysts, exhibited a fair or good electrocatalytic activity in comparison with other similar reported materials. It was found that MA and CVD are appropriate processes to prepare electrocatalysts for the ORR with particles of nano metric size and performing with an acceptable catalytic activity. PtCoNi 70-23-7% by MA and PtCoNi-CVD electrocatalysts showed the highest activity in alkaline media, while in acidic electrolyte PtCoNi 70

  17. Plasma boriding of a cobalt–chromium alloy as an interlayer for nanostructured diamond growth

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, Jamin M.; Jubinsky, Matthew; Catledge, Shane A., E-mail: catledge@uab.edu

    2015-02-15

    Highlights: • Metal-boride layer creates a compatible surface for NSD deposition. • PECVD boriding on CoCrMo produces robust metal-boride layer. • Deposition temperature comparison shows 750 °C boriding masks surface cobalt. • EDS shows boron diffusion as well as deposition. • Nanoindentation hardness of CoCrMo substantially increases after boriding. - Abstract: Chemical vapor deposited (CVD) diamond coatings can potentially improve the wear resistance of cobalt–chromium medical implant surfaces, but the high cobalt content in these alloys acts as a catalyst to form graphitic carbon. Boriding by high temperature liquid baths and powder packing has been shown to improve CVD diamond compatibility with cobalt alloys. We use the microwave plasma-enhanced (PE) CVD process to deposit interlayers composed primarily of the borides of cobalt and chromium. The use of diborane (B{sub 2}H{sub 6}) in the plasma feedgas allows for the formation of a robust boride interlayer for suppressing graphitic carbon during subsequent CVD of nano-structured diamond (NSD). This metal–boride interlayer is shown to be an effective diffusion barrier against elemental cobalt for improving nucleation and adhesion of NSD coatings on a CoCrMo alloy. Migration of elemental cobalt to the surface of the interlayer is significantly reduced and undetectable on the surface of the subsequently-grown NSD coating. The effects of PECVD boriding are compared for a range of substrate temperatures and deposition times and are evaluated using glancing-angle X-ray diffraction (XRD), cross-sectional scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and micro-Raman spectroscopy. Boriding of CoCrMo results in adhered nanostructured diamond coatings with low surface roughness.

  18. Radicals and Non-Equilibrium Processes in Low-Temperature Plasmas

    Science.gov (United States)

    Petrović, Zoran; Mason, Nigel; Hamaguchi, Satoshi; Radmilović-Radjenović, Marija

    2007-06-01

    project the recent results onto the standard Townsend theory and phenomenology. New developments in plasma diagnostics are given by U Czarnetzki who studies application of the plasma series resonance effect in RF-discharges and by J Röpcke who describes the recent progress in understanding kinetics of molecular plasmas using laser absorption techniques. Theoretical description of the two frequency operation of capacitively coupled plasmas in CF4 mixtures is provided by Z Donko. Different plasma sources are well covered. First S Popović discusses microwave discharges in oxygen and the role of the oxygen metastable, K Becker analyzes UV production in dielectric barrier discharges while K Tachibana and O Sakai show results on generation and applications of atmospheric pressure glow discharges by integration of microplasmas Plasma surface interactions are addressed from the viewpoint of the surface processes (etching of organic dielectrics and Si in particular) by S Hamaguchi while the recent numerical techniques in predicting 3D etched profiles are presented by B Radjenović who discusses coupling of the profile charging and the level set calculations in 3D profile evolution simulations. A detailed study of SiO2 etching in two frequency plasma is provided by F Hamaoka, T Yagisawa and T Makabe. Plasmas may not only be used in their destructive (etching) mode, they may be used to build (deposit) new materials or structures. Thus plasma assisted growth of ultrathin oxides and nitrides on Si surfaces for CMOS applications is described in the paper by P Morgen and coworkers while E Neyts et al discuss reaction mechanisms and thin a-C:H film growth from low energy hydrocarbon radicals. Finally M Shiratani describes control of nano-strucutures produced by plasma CVD films and its application in development of novel photovoltaic devices. Although the major applications discussed in this Symposium were related to nano-electronics, much of the basic research was relevant for the

  19. Plasma Enhanced Growth of Carbon Nanotubes For Ultrasensitive Biosensors

    Science.gov (United States)

    Cassell, Alan M.; Li, J.; Ye, Q.; Koehne, J.; Chen, H.; Meyyappan, M.

    2004-01-01

    The multitude of considerations facing nanostructure growth and integration lends itself to combinatorial optimization approaches. Rapid optimization becomes even more important with wafer-scale growth and integration processes. Here we discuss methodology for developing plasma enhanced CVD growth techniques for achieving individual, vertically aligned carbon nanostructures that show excellent properties as ultrasensitive electrodes for nucleic acid detection. We utilize high throughput strategies for optimizing the upstream and downstream processing and integration of carbon nanotube electrodes as functional elements in various device types. An overview of ultrasensitive carbon nanotube based sensor arrays for electrochemical biosensing applications and the high throughput methodology utilized to combine novel electrode technology with conventional MEMS processing will be presented.

  20. PLASMA EMISSION BY NONLINEAR ELECTROMAGNETIC PROCESSES

    Energy Technology Data Exchange (ETDEWEB)

    Ziebell, L. F.; Petruzzellis, L. T.; Gaelzer, R. [Instituto de Física, UFRGS, Porto Alegre, RS (Brazil); Yoon, P. H. [Institute for Physical Science and Technology, University of Maryland, College Park (United States); Pavan, J., E-mail: luiz.ziebell@ufrgs.br, E-mail: laripetruzzellis@yahoo.com.br, E-mail: rudi.gaelzer@ufrgs.br, E-mail: yoonp@umd.edu, E-mail: joel.pavan@ufpel.edu.br [Instituto de Física e Matemática, UFPel, Pelotas, RS (Brazil)

    2015-06-20

    The plasma emission, or electromagnetic (EM) radiation at the plasma frequency and/or its harmonic(s), is generally accepted as the radiation mechanism responsible for solar type II and III radio bursts. Identification and characterization of these solar radio burst phenomena were done in the 1950s. Despite many decades of theoretical research since then, a rigorous demonstration of the plasma emission process based upon first principles was not available until recently, when, in a recent Letter, Ziebell et al. reported the first complete numerical solution of EM weak turbulence equations; thus, quantitatively analyzing the plasma emission process starting from the initial electron beam and the associated beam-plasma (or Langmuir wave) instability, as well as the subsequent nonlinear conversion of electrostatic Langmuir turbulence into EM radiation. In the present paper, the same problem is revisited in order to elucidate the detailed physical mechanisms that could not be reported in the brief Letter format. Findings from the present paper may be useful for interpreting observations and full-particle numerical simulations.

  1. High plasma cholesteryl ester transfer protein levels may favour reduced incidence of cardiovascular events in men with low triglycerides

    NARCIS (Netherlands)

    Borggreve, Susanna E.; Hillege, Hans L.; Dallinga-Thie, Geesje M.; de Jong, Paul E.; Wolffenbuttel, Bruce H. R.; Grobbee, Diederik E.; van Tol, Arie; Dullaart, Robin P. F.

    Aims High cholesteryl ester transfer protein (CETP) concentrations are associated with increased risk of cardiovascular disease (CVD) in subjects with high triglycerides. We determined the relationship of plasma CETP with incident CVD in a population with relatively low triglycerides. Methods and

  2. High plasma cholesteryl ester transfer protein levels may favour reduced incidence of cardiovascular events in men with low triglycerides

    NARCIS (Netherlands)

    Borggreve, Susanna E.; Hillege, Hans L.; Dallinga-Thie, Geesje M.; de Jong, Paul E.; Wolffenbuttel, Bruce H. R.; Grobbee, Diederik E.; van Tol, Arie; Dullaart, Robin P. F.

    2007-01-01

    High cholesteryl ester transfer protein (CETP) concentrations are associated with increased risk of cardiovascular disease (CVD) in subjects with high triglycerides. We determined the relationship of plasma CETP with incident CVD in a population with relatively low triglycerides. A nested

  3. Validation of a model to investigate the effects of modifying cardiovascular disease (CVD) risk factors on the burden of CVD: the rotterdam ischemic heart disease and stroke computer simulation (RISC) model.

    Science.gov (United States)

    van Kempen, Bob J H; Ferket, Bart S; Hofman, Albert; Steyerberg, Ewout W; Colkesen, Ersen B; Boekholdt, S Matthijs; Wareham, Nicholas J; Khaw, Kay-Tee; Hunink, M G Myriam

    2012-12-06

    We developed a Monte Carlo Markov model designed to investigate the effects of modifying cardiovascular disease (CVD) risk factors on the burden of CVD. Internal, predictive, and external validity of the model have not yet been established. The Rotterdam Ischemic Heart Disease and Stroke Computer Simulation (RISC) model was developed using data covering 5 years of follow-up from the Rotterdam Study. To prove 1) internal and 2) predictive validity, the incidences of coronary heart disease (CHD), stroke, CVD death, and non-CVD death simulated by the model over a 13-year period were compared with those recorded for 3,478 participants in the Rotterdam Study with at least 13 years of follow-up. 3) External validity was verified using 10 years of follow-up data from the European Prospective Investigation of Cancer (EPIC)-Norfolk study of 25,492 participants, for whom CVD and non-CVD mortality was compared. At year 5, the observed incidences (with simulated incidences in brackets) of CHD, stroke, and CVD and non-CVD mortality for the 3,478 Rotterdam Study participants were 5.30% (4.68%), 3.60% (3.23%), 4.70% (4.80%), and 7.50% (7.96%), respectively. At year 13, these percentages were 10.60% (10.91%), 9.90% (9.13%), 14.20% (15.12%), and 24.30% (23.42%). After recalibrating the model for the EPIC-Norfolk population, the 10-year observed (simulated) incidences of CVD and non-CVD mortality were 3.70% (4.95%) and 6.50% (6.29%). All observed incidences fell well within the 95% credibility intervals of the simulated incidences. We have confirmed the internal, predictive, and external validity of the RISC model. These findings provide a basis for analyzing the effects of modifying cardiovascular disease risk factors on the burden of CVD with the RISC model.

  4. Validation of a model to investigate the effects of modifying cardiovascular disease (CVD risk factors on the burden of CVD: the rotterdam ischemic heart disease and stroke computer simulation (RISC model

    Directory of Open Access Journals (Sweden)

    van Kempen Bob JH

    2012-12-01

    Full Text Available Abstract Background We developed a Monte Carlo Markov model designed to investigate the effects of modifying cardiovascular disease (CVD risk factors on the burden of CVD. Internal, predictive, and external validity of the model have not yet been established. Methods The Rotterdam Ischemic Heart Disease and Stroke Computer Simulation (RISC model was developed using data covering 5 years of follow-up from the Rotterdam Study. To prove 1 internal and 2 predictive validity, the incidences of coronary heart disease (CHD, stroke, CVD death, and non-CVD death simulated by the model over a 13-year period were compared with those recorded for 3,478 participants in the Rotterdam Study with at least 13 years of follow-up. 3 External validity was verified using 10 years of follow-up data from the European Prospective Investigation of Cancer (EPIC-Norfolk study of 25,492 participants, for whom CVD and non-CVD mortality was compared. Results At year 5, the observed incidences (with simulated incidences in brackets of CHD, stroke, and CVD and non-CVD mortality for the 3,478 Rotterdam Study participants were 5.30% (4.68%, 3.60% (3.23%, 4.70% (4.80%, and 7.50% (7.96%, respectively. At year 13, these percentages were 10.60% (10.91%, 9.90% (9.13%, 14.20% (15.12%, and 24.30% (23.42%. After recalibrating the model for the EPIC-Norfolk population, the 10-year observed (simulated incidences of CVD and non-CVD mortality were 3.70% (4.95% and 6.50% (6.29%. All observed incidences fell well within the 95% credibility intervals of the simulated incidences. Conclusions We have confirmed the internal, predictive, and external validity of the RISC model. These findings provide a basis for analyzing the effects of modifying cardiovascular disease risk factors on the burden of CVD with the RISC model.

  5. Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer-Free Device Fabrication.

    Science.gov (United States)

    Wang, Huaping; Yu, Gui

    2016-07-01

    Graphene is the most broadly discussed and studied two-dimensional material because of its preeminent physical, mechanical, optical, and thermal properties. Until now, metal-catalyzed chemical vapor deposition (CVD) has been widely employed for the scalable production of high-quality graphene. However, in order to incorporate the graphene into electronic devices, a transfer process from metal substrates to targeted substrates is inevitable. This process usually results in contamination, wrinkling, and breakage of graphene samples - undesirable in graphene-based technology and not compatible with industrial production. Therefore, direct graphene growth on desired semiconductor and dielectric substrates is considered as an effective alternative. Over the past years, there have been intensive investigations to realize direct graphene growth using CVD methods without the catalytic role of metals. Owing to the low catalytic activity of non-metal substrates for carbon precursor decomposition and graphene growth, several strategies have been designed to facilitate and engineer graphene fabrication on semiconductors and insulators. Here, those developed strategies for direct CVD graphene growth on semiconductors and dielectrics for transfer-free fabrication of electronic devices are reviewed. By employing these methods, various graphene-related structures can be directly prepared on desired substrates and exhibit excellent performance, providing versatile routes for varied graphene-based materials fabrication. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Stress in ion-implanted CVD Si3N4 films

    International Nuclear Information System (INIS)

    EerNisse, E.P.

    1977-01-01

    The compressive stress buildup caused in chemical-vapor-deposited (CVD) Si 3 N 4 films by ion implantation is shown to be caused entirely by atomic collision effects, ionization effects being unimportant. The stress introduction rate is shown to be independent of CVD processing variables and O content of the film. The maximum attainable compressive stress change is 3.5 x 10 10 dyn/cm 2 , resulting in a maximum net compressive stress of 2 x 10 10 dyn/cm 2 for films on Si where the as-deposited films inherently have 1.5 x 10 10 dyn/cm 2 tensile stress before ion implantation. Results are presented which show that O in the films inhibits thermal annealing of the ion-implantation-induced compressive stress. Results for introduction rate and annealing effects are presented in normalized form so that workers can use the effects for intentional stress level adjustment in the films to reduce probability of cracking and detachment

  7. Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

    NARCIS (Netherlands)

    Ponomarev, M.; Verheijen, M.A.; Keuning, W.; Sanden, van de M.C.M.; Creatore, M.

    2012-01-01

    Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO:Al layers by focusing on the control

  8. Undoped CVD diamond films for electrochemical applications

    International Nuclear Information System (INIS)

    Mosinska, Lidia; Fabisiak, Kazimierz; Paprocki, Kazimierz; Kowalska, Magdalena; Popielarski, Pawel; Szybowicz, Miroslaw

    2013-01-01

    By using different deposition conditions, the CVD diamond films with different qualities and orientation were grown by the hot-filament CVD technique. The object of this article is to summarize and discuss relation between structural, physical and electrochemical properties of different diamond electrodes. The physical properties of the Hot Filament CVD microcrystalline diamond films are analyzed by scanning electron microscopy and Raman spectroscopy. In presented studies two different electrodes were used of the diamond grain sizes around 200 nm and 10 μm, as it was estimated from SEM picture. The diamond layers quality was checked on basis of FWHM (Full width at Half Maximum) of 1332 cm −1 diamond Raman peak. The ratio of sp 3 /sp 2 carbon bonds was determined by 1550 cm −1 G band and 1350 cm −1 D band in the Raman spectrum. The electrochemical properties were analyzed using (CV) cyclic voltammetry measurements in aqueous solutions. The sensitivity of undoped diamond electrodes depends strongly on diamond film quality and concentration of amorphous carbon phase in the diamond layer

  9. Modeling the astrophysical dynamical process with laser-plasmas

    International Nuclear Information System (INIS)

    Xia Jiangfan; Zhang Jun; Zhang Jie

    2001-01-01

    The use of the state-of-the-art laser facility makes it possible to create conditions of the same or similar to those in the astrophysical processes. The introduction of the astrophysics-relevant ideas in laser-plasma experiments is propitious to the understanding of the astrophysical phenomena. However, the great difference between the laser-produced plasmas and the astrophysical processes makes it awkward to model the latter by laser-plasma experiments. The author addresses the physical backgrounds for modeling the astrophysical plasmas by laser plasmas, connecting these two kinds of plasmas by scaling laws. Thus, allowing the creation of experimental test beds where observations and models can be quantitatively compared with laser-plasma data. Special attentions are paid on the possibilities of using home-made laser facilities to model astrophysical phenomena

  10. CVD diamond detectors and dosimeters

    International Nuclear Information System (INIS)

    Manfredotti, C.; Fizzotti, F.; LoGiudice, A.; Paolini, C.; Oliviero, P.; Vittone, E.; Torino Univ., Torino

    2002-01-01

    Natural diamond, because of its well-known properties of tissue-equivalence, has recorded a wide spreading use in radiotherapy planning with electron linear accelerators. Artificial diamond dosimeters, as obtained by Chemical Vapour Deposition (CVD) could be capable to offer the same performances and they can be prepared in different volumes and shapes. The dosimeter sensitivity per unit volume may be easily proved to be better than standard ionization microchamber. We have prepared in our laboratory CVD diamond microchamber (diamond tips) in emispherical shape with an external diameter of 200 μm, which can be used both as X-ray beam profilometers and as microdosimeters for small field applications like stereotaxy and also for in vivo applications. These dosimeters, which are obtained on a wire substrate that could be either metallic or SiC or even graphite, display good performances also as ion or synchrotron X-rays detectors

  11. Hydrogen production using plasma processing

    International Nuclear Information System (INIS)

    Wagner, D.; Whidden, T.K.

    2006-01-01

    Plasma processing is a promising method of extracting hydrogen from natural gas while avoiding the greenhouse gas (GHG) production typical of other methods such as steam methane reforming. This presentation describes a plasma discharge process based that, in a single reactor pass, can yield hydrogen concentrations of up to 50 % by volume in the product gas mixture. The process is free of GHG's, does not require catalysts and is easily scalable. Chemical and morphological analyses of the gaseous and solid products of the process by gas-chromatography/mass-spectrometry, microscopic Raman analyses and electron microscopy respectively are reviewed. The direct production of hydrogen-enriched natural gas (HENG) as a fuel for low pollution internal combustion engines and its purification to high-purity hydrogen (99.99%) from the product gas by pressure swing adsorption (PSA) purifier beds are reviewed. The presentation reviews potential commercial applications for the technology

  12. Study on the low leakage current of an MIS structure fabricated by ICP-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, S-Y; Hon, M-H [Department of Materials Science and Engineering, National Cheng Kung University, 1, Ta-Hsueh Road, Tainan, 701 Taiwan (China); Lu, Y-M, E-mail: ymlumit@yahoo.com.tw

    2008-03-15

    As the dimensions of electric devices continue to shrink, it is becoming increasingly important to understand how to obtain good quality gate oxide film materials wilth higher carrier mobility, lower leakage current and greater reliability. All of them have become major concerns in the fabrication of thin film oxide transistors. A novel film deposition method called Inductively Coupled Plasma-Chemical Vapor Deposition (ICP-CVD) has received attraction in the semiconductor industry, because it can be capable of generating high density plasmas at extremely low temperature, resulting in less ion bombardment of the material surface. In this work, we present the results of crystallized silicon dioxide films deposited by inductively coupled plasma chemical vapor deposition technique at an extremely low temperature of 90 deg. C. The value of the refractive index of the crystallized ICP-CVD SiO{sub 2} film depends on the r.f. power of the ICP system, and approximates to be 1.46. This value is comparable to that of SiO{sub 2} films prepared by thermal oxidation. As the r.f. power of ICP applied more than 1250 Watts, still only the (111) diffraction peak is observed by XRD, which implies a very strong preferred orientation or single crystal structure. Too low or too high r.f. power both produces amorphous SiO{sub 2} films. From the I-V curve, the MIS device with a SiO{sub 2} dielectric film has a lower leakage current density of 6.8x10{sup -8}A/cm{sup 2} at 1V as the film prepared at 1750 watts. The highest breakdown field in this study is 15.8 MV/cm. From the FTIR analysis, it was found that more hydrogen atoms incorporate into films and form Si-OH bonds as the r.f. power increases. The existence of Si-OH bonds leads to a poor reliability of the MIS device.

  13. Recent results on CVD diamond radiation sensors

    Science.gov (United States)

    Weilhammer, P.; Adam, W.; Bauer, C.; Berdermann, E.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; v. d. Eijk, R.; van Eijk, B.; Fallou, A.; Fish, D.; Fried, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knopfle, K. T.; Krammer, M.; Manfredi, P. F.; Meier, D.; LeNormand; Pan, L. S.; Pernegger, H.; Pernicka, M.; Plano, R.; Re, V.; Riester, J. L.; Roe, S.; Roff; Rudge, A.; Schieber, M.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; RD 42 Collaboration

    1998-02-01

    CVD diamond radiation sensors are being developed for possible use in trackers in the LHC experiments. The diamond promises to be radiation hard well beyond particle fluences that can be tolerated by Si sensors. Recent results from the RD 42 collaboration on charge collection distance and on radiation hardness of CVD diamond samples will be reported. Measurements with diamond tracking devices, both strip detectors and pixel detectors, will be discussed. Results from beam tests using a diamond strip detector which was read out with fast, 25 ns shaping time, radiation-hard pipeline electronics will be presented.

  14. Synthesis of graphene on nickel films by CVD method using methane

    International Nuclear Information System (INIS)

    Castro, Manuela O. de; Liebold-Ribeiro, Yvonne; Barros, Eduardo B.; Salomao, Francisco C.C.; Mendes Filho, Josue; Souza Filho, Antonio G.; Chesman, Carlos

    2011-01-01

    Full text: Nanomaterials have opened up many possibilities for groundbreaking innovations in various technologies of modern society. One key example is graphene, which is composed of one-atom-thick sheet of sp2-bonded carbon atoms, arranged in a hexagonal symmetry. However, real world applications of graphene require well-established and large synthesis techniques. The so-called Chemical Vapor Deposition (CVD) is one of the most promising method for synthesizing graphene. The general idea of this technique is to dissolve carbon atoms inside a transition metal melt at a certain temperature, then allowing the dissolved carbon to precipitate at lower temperatures as single layer graphene (SLG). In the present work, we used the CVD method and methane gas as carbon source for the synthesis of graphene on silicon (Si) substrates (300nm thermal oxide) covered with sputtered nickel (Ni) films as catalyst. In order to achieve large-area and defect-free graphene sheets the influence of the different growth parameters (growth temperature and time, gas flow of methane, film thickness and grain size of Ni) on quality and quantity of graphene growth were studied. The obtained graphene films were transferred to a silicon substrate by the polymer coating process, using polymethyl-methacrylate (PMMA) as coating. In order to characterize the transferred graphene we used Scanning Electron Microscopy (SEM), Raman Spectroscopy, Optical Microscopy and Atomic Force Microscopy (AFM). The results show the influence of CVD process parameters on the quality and quantity of graphene growth in our experimental conditions. Acknowledgments: The authors thank Brazilian agencies CNPq and FUNCAP for financial support and Alfonso Reina (MIT, USA) for helpful discussions. (author)

  15. Plasma spraying process of disperse carbides for spraying and facing

    International Nuclear Information System (INIS)

    Blinkov, I.V.; Vishnevetskaya, I.A.; Kostyukovich, T.G.; Ostapovich, A.O.

    1989-01-01

    A possibility to metallize carbides in plasma of impulsing capacitor discharge is considered. Powders granulation occurs during plasma spraying process, ceramic core being completely capped. X-ray phase and chemical analyses of coatings did not show considerable changes of carbon content in carbides before and after plasma processing. This distinguishes the process of carbides metallization in impulsing plasma from the similar processing in arc and high-frequency plasma generator. Use of powder composites produced in the impulsing capacitor discharge, for plasma spraying and laser facing permits 2-3 times increasing wear resistance of the surface layer as against the coatings produced from mechanical powders mixtures

  16. Microwave Plasma Sources for Gas Processing

    International Nuclear Information System (INIS)

    Mizeraczyk, J.; Jasinski, M.; Dors, M.; Zakrzewski, Z.

    2008-01-01

    In this paper atmospheric pressure microwave discharge methods and devices used for producing the non-thermal plasmas for processing of gases are presented. The main part of the paper concerns the microwave plasma sources (MPSs) for environmental protection applications. A few types of the MPSs, i.e. waveguide-based surface wave sustained MPS, coaxial-line-based and waveguide-based nozzle-type MPSs, waveguide-based nozzleless cylinder-type MPS and MPS for microdischarges are presented. Also, results of the laboratory experiments on the plasma processing of several highly-concentrated (up to several tens percent) volatile organic compounds (VOCs), including Freon-type refrigerants, in the moderate (200-400 W) waveguide-based nozzle-type MPS (2.45 GHz) are presented. The results showed that the microwave discharge plasma fully decomposed the VOCs at relatively low energy cost. The energy efficiency of VOCs decomposition reached 1000 g/kWh. This suggests that the microwave discharge plasma can be a useful tool for environmental protection applications. In this paper also results of the use of the waveguide-based nozzleless cylinder-type MPS to methane reforming into hydrogen are presented

  17. Plasma Discharge Process in a Pulsed Diaphragm Discharge System

    Science.gov (United States)

    Duan, Jianjin; Hu, Jue; Zhang, Chao; Wen, Yuanbin; Meng, Yuedong; Zhang, Chengxu

    2014-12-01

    As one of the most important steps in wastewater treatment, limited study on plasma discharge process is a key challenge in the development of plasma applications. In this study, we focus on the plasma discharge process of a pulsed diaphragm discharge system. According to the analysis, the pulsed diaphragm discharge proceeds in seven stages: (1) Joule heating and heat exchange stage; (2) nucleated site formation; (3) plasma generation (initiation of the breakdown stage); (4) avalanche growth and plasma expansion; (5) plasma contraction; (6) termination of the plasma discharge; and (7) heat exchange stage. From this analysis, a critical voltage criterion for breakdown is obtained. We anticipate this finding will provide guidance for a better application of plasma discharges, especially diaphragm plasma discharges.

  18. Lp(a-cholesterol is associated with HDL-cholesterol in overweight and obese African American children and is not an independent risk factor for CVD

    Directory of Open Access Journals (Sweden)

    Sharma Sushma

    2012-01-01

    Full Text Available Abstract Background The role of Lipoprotein (a cholesterol {Lp(a-C}as an additional and/or independent risk factor for cardiovascular disease (CVD is not clear. We evaluated the associations between Lp(a-C and other CVD risk factors including plasma lipoprotein concentrations and body fatness in overweight and obese African American children. Methods A cross-sectional analysis was carried out using data from a sample of 121 African American children aged 9-11 years with Body Mass Index (BMI's greater than the 85th percentile. Body height, weight and waist circumference (WC were measured. Fasting plasma concentrations of Lp(a-C, Total cholesterol (TC, High density lipoprotein cholesterol (HDL-C, Very low density lipoprotein cholesterol (VLDL-C, Intermediate density lipoprotein cholesterol (IDL-C, Low density lipoprotein cholesterol (LDL-C, and Triacylglycerides (TAG were analyzed using the vertical auto profile (VAP cholesterol method. Results After adjusting for child age, gender, and pubertal status, Lp(a-C was positively associated with both HDL-C and TC, and negatively associated with VLDL-C and TAG. Including BMIz and WC as additional covariates did not alter the direction of the relationships between Lp(a-C and the other lipoproteins. Finally, after adjusting for the other plasma lipoproteins, Lp(a-C remained strongly associated with HDL-C, whereas the associations of Lp(a-C with the other lipoproteins were not significant when HDL-C was simultaneously included in the regression models. Conclusions Lp(a-C was positively associated with HDL-C and this association is not influenced by other lipoprotein subclasses or by the degree of obesity. We conclude that Lp(a cholesterol is not an independent risk factor for CVD in African American children.

  19. Automatic system for processing the plasma radiation spectra

    International Nuclear Information System (INIS)

    Isakaev, Eh.Kh.; Markin, A.V.; Khajmin, V.A.; Chinnov, V.F.

    2001-01-01

    One is tackling a problem to ensure computer for processing of experimental data when studying plasma obtained due to the present day systems to acquire information. One elaborated rather simple and reliable programs for processing. The system is used in case of plasma quantitative spectroscopy representing the classical and most widely used method to analyze the parameters and the properties of low-temperature and high-temperature plasma [ru

  20. Effects of Light Intensity Activity on CVD Risk Factors: A Systematic Review of Intervention Studies

    Directory of Open Access Journals (Sweden)

    Romeo B. Batacan

    2015-01-01

    Full Text Available The effects of light intensity physical activity (LIPA on cardiovascular disease (CVD risk factors remain to be established. This review summarizes the effects of LIPA on CVD risk factors and CVD-related markers in adults. A systematic search of four electronic databases (PubMed, Academic Search Complete, SPORTDiscus, and CINAHL examining LIPA and CVD risk factors (body composition, blood pressure, glucose, insulin, glycosylated hemoglobin, and lipid profile and CVD-related markers (maximal oxygen uptake, heart rate, C-reactive protein, interleukin-6, tumor necrosis factor-alpha, and tumor necrosis factor receptors 1 and 2 published between 1970 and 2015 was performed on 15 March 2015. A total of 33 intervention studies examining the effect of LIPA on CVD risk factors and markers were included in this review. Results indicated that LIPA did not improve CVD risk factors and CVD-related markers in healthy individuals. LIPA was found to improve systolic and diastolic blood pressure in physically inactive populations with a medical condition. Reviewed studies show little support for the role of LIPA to reduce CVD risk factors. Many of the included studies were of low to fair study quality and used low doses of LIPA. Further studies are needed to establish the value of LIPA in reducing CVD risk.

  1. Sub-bandgap optical absorption spectroscopy of hydrogenated microcrystalline silicon thin films prepared using hot-wire CVD (Cat-CVD) process

    International Nuclear Information System (INIS)

    Goktas, O.; Isik, N.; Okur, S.; Gunes, M.; Carius, R.; Klomfass, J.; Finger, F.

    2006-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films with different silane concentration (SC) have been prepared using the HW-CVD technique. Dual beam photoconductivity (DBP), photothermal deflection spectroscopy (PDS), and transmission measurements have been used to investigate the optical properties of the μc-Si:H films. Two different sub-bandgap absorption, α(hν), methods have been applied and analyzed to obtain a better insight into the electronic states involved. A good agreement has been obtained in the absorption spectrum obtained from the PDS and DBP measurements at energies above the bandgap. Differences between PDS and DBP spectra exist below the bandgap energy where DBP spectra always give lower α(hν) values and show a dependence on the SC. For some films, differences exist in the α(hν) spectra when the DBP measurements are carried out through the film and substrate side. In addition, for some films, there remains fringe pattern left on the spectrum after the calculation of the fringe-free absorption spectrum, which indicates structural inhomogeneities present throughout the film

  2. Preparación de tamices moleculares de carbono por CVD

    OpenAIRE

    Manso, R.; Pajares, J. A.; Albiniak, A.; Broniek, E.; Siemieniewska, T.

    2001-01-01

    Carbon molecular sieves (CMS) have been prepared by chemical vapour deposition (CVD) of carbon from the pyrolysis of benzene molecules on activated carbon surfaces. The pyrolysis of benzene at temperatures in the range 650-850 ºC restricts the accessibility of the micropores due to the creation of constrictions on the microporous network. Temperatures higher than 850 ºC (temperature of carbonisation) add difficulties due to decomposition and sinterization processes. Low flows of nitrogen (30 ...

  3. Recent results with CVD diamond trackers

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Ziock, H.; Zoeller, M

    1999-08-01

    We present recent results on the use of Chemical Vapor Deposition (CVD) diamond microstrip detectors for charged particle tracking. A series of detectors was fabricated using 1 x 1 cm{sup 2} diamonds. Good signal-to-noise ratios were observed using both slow and fast readout electronics. For slow readout electronics, 2 {mu}s shaping time, the most probable signal-to-noise ratio was 50 to 1. For fast readout electronics, 25 ns peaking time, the most probable signal-to-noise ratio was 7 to 1. Using the first 2 x 4 cm{sup 2} diamond from a production CVD reactor with slow readout electronics, the most probable signal-to-noise ratio was 23 to 1. The spatial resolution achieved for the detectors was consistent with the digital resolution expected from the detector pitch.

  4. Recent results with CVD diamond trackers

    CERN Document Server

    Adam, W; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Runólfsson, O; Russ, J; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; White, C; Ziock, H J; Zöller, M

    1999-01-01

    We present recent results on the use of chemical vapor deposition (CVD) diamond microstrip detectors for charged particle tracking. A series of detectors was fabricated using 1*1 cm/sup 2/ diamonds. Good signal-to-noise ratios were observed using both slow and fast readout electronics. For slow readout electronics, 2 mu s shaping time, the most probable signal-to-noise ratio was 50 to 1. For fast readout electronics, 25 ns peaking time, the most probable signal-to-noise ratio was 7 to 1. Using the first 2*4 cm/sup 2/ diamond from a production CVD reactor with slow readout electronics, the most probable signal-to-noise ratio was 23 to 1. The spatial resolution achieved for the detectors was consistent with the digital resolution expected from the detector pitch. (6 refs).

  5. Friction Properties of Polished Cvd Diamond Films Sliding against Different Metals

    Science.gov (United States)

    Lin, Zichao; Sun, Fanghong; Shen, Bin

    2016-11-01

    Owing to their excellent mechanical and tribological properties, like the well-known extreme hardness, low coefficient of friction and high chemical inertness, chemical vapor deposition (CVD) diamond films have found applications as a hard coating for drawing dies. The surface roughness of the diamond films is one of the most important attributes to the drawing dies. In this paper, the effects of different surface roughnesses on the friction properties of diamond films have been experimentally studied. Diamond films were fabricated using hot filament CVD. The WC-Co (Co 6wt.%) drawing dies were used as substrates. A gas mixture of acetone and hydrogen gas was used as the feedstock gas. The CVD diamond films were polished using mechanical polishing. Polished diamond films with three different surface roughnesses, as well as the unpolished diamond film, were fabricated in order to study the tribological performance between the CVD diamond films and different metals with oil lubrication. The unpolished and polished CVD diamond films are characterized with scanning electron microscope (SEM), atomic force microscope (AFM), surface profilometer, Raman spectrum and X-ray diffraction (XRD). The friction examinations were carried out by using a ball-on-plate type reciprocating friction tester. Low carbide steel, stainless steel, copper and aluminum materials were used as counterpart balls. Based on this study, the results presented the friction coefficients between the polished CVD films and different metals. The friction tests demonstrate that the smooth surface finish of CVD diamond films is beneficial for reducing their friction coefficients. The diamond films exhibit low friction coefficients when slid against the stainless steel balls and low carbide steel ball, lower than that slid against copper ball and aluminum ball, attributed to the higher ductility of copper and aluminum causing larger amount of wear debris adhering to the sliding interface and higher adhesive

  6. Fluorophore-based sensor for oxygen radicals in processing plasmas

    International Nuclear Information System (INIS)

    Choudhury, Faraz A.; Shohet, J. Leon; Sabat, Grzegorz; Sussman, Michael R.; Nishi, Yoshio

    2015-01-01

    A high concentration of radicals is present in many processing plasmas, which affects the processing conditions and the properties of materials exposed to the plasma. Determining the types and concentrations of free radicals present in the plasma is critical in order to determine their effects on the materials being processed. Current methods for detecting free radicals in a plasma require multiple expensive and bulky instruments, complex setups, and often, modifications to the plasma reactor. This work presents a simple technique that detects reactive-oxygen radicals incident on a surface from a plasma. The measurements are made using a fluorophore dye that is commonly used in biological and cellular systems for assay labeling in liquids. Using fluorometric analysis, it was found that the fluorophore reacts with oxygen radicals incident from the plasma, which is indicated by degradation of its fluorescence. As plasma power was increased, the quenching of the fluorescence significantly increased. Both immobilized and nonimmobilized fluorophore dyes were used and the results indicate that both states function effectively under vacuum conditions. The reaction mechanism is very similar to that of the liquid dye

  7. Fluorophore-based sensor for oxygen radicals in processing plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Choudhury, Faraz A.; Shohet, J. Leon, E-mail: shohet@engr.wisc.edu [Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Sabat, Grzegorz; Sussman, Michael R. [Department of Biochemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Nishi, Yoshio [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

    2015-11-15

    A high concentration of radicals is present in many processing plasmas, which affects the processing conditions and the properties of materials exposed to the plasma. Determining the types and concentrations of free radicals present in the plasma is critical in order to determine their effects on the materials being processed. Current methods for detecting free radicals in a plasma require multiple expensive and bulky instruments, complex setups, and often, modifications to the plasma reactor. This work presents a simple technique that detects reactive-oxygen radicals incident on a surface from a plasma. The measurements are made using a fluorophore dye that is commonly used in biological and cellular systems for assay labeling in liquids. Using fluorometric analysis, it was found that the fluorophore reacts with oxygen radicals incident from the plasma, which is indicated by degradation of its fluorescence. As plasma power was increased, the quenching of the fluorescence significantly increased. Both immobilized and nonimmobilized fluorophore dyes were used and the results indicate that both states function effectively under vacuum conditions. The reaction mechanism is very similar to that of the liquid dye.

  8. Changes in CVD risk factors in the activity counseling trial

    Directory of Open Access Journals (Sweden)

    Meghan Baruth

    2011-01-01

    Full Text Available Meghan Baruth1, Sara Wilcox1, James F Sallis3, Abby C King4,5, Bess H Marcus6, Steven N Blair1,21Department of Exercise Science, 2Department of Epidemiology and Biostatistics, Arnold School of Public Health, University of South Carolina, Public Health Research Center, Columbia, SC, USA; 3Department of Psychology, San Diego State University, San Diego, CA, USA; 4Department of Health Research and Policy, 5Stanford Prevention Research Center, Department of Medicine, Stanford University School of Medicine, Stanford, CA, USA; 6Behavioral and Social Sciences Section, Brown University Program in Public Health, Providence, RI, USAAbstract: Primary care facilities may be a natural setting for delivering interventions that focus on behaviors that improve cardiovascular disease (CVD risk factors. The purpose of this study was to examine the 24-month effects of the Activity Counseling Trial (ACT on CVD risk factors, to examine whether changes in CVD risk factors differed according to baseline risk factor status, and to examine whether changes in fitness were associated with changes in CVD risk factors. ACT was a 24-month multicenter randomized controlled trial to increase physical activity. Participants were 874 inactive men and women aged 35–74 years. Participants were randomly assigned to one of three arms that varied by level of counseling, intensity, and resource requirements. Because there were no significant differences in change over time between arms on any of the CVD risk factors examined, all arms were combined, and the effects of time, independent of arm, were examined separately for men and women. Time × Baseline risk factor status interactions examined whether changes in CVD risk factors differed according to baseline risk factor status. Significant improvements in total cholesterol, high-density lipoprotein cholesterol (HDL-C and low-density lipoprotein cholesterol, the ratio of total cholesterol to HDL-C, and triglycerides were seen in

  9. Radiation monitoring with CVD diamonds and PIN diodes at BaBar

    Energy Technology Data Exchange (ETDEWEB)

    Bruinsma, M. [University of California Irvine, Irvine, CA 92697 (United States); Burchat, P. [Stanford University, Stanford, CA 94305-4060 (United States); Curry, S. [University of California Irvine, Irvine, CA 92697 (United States)], E-mail: scurry@slac.stanford.edu; Edwards, A.J. [Stanford University, Stanford, CA 94305-4060 (United States); Kagan, H.; Kass, R. [Ohio State University, Columbus, OH 43210 (United States); Kirkby, D. [University of California Irvine, Irvine, CA 92697 (United States); Majewski, S.; Petersen, B.A. [Stanford University, Stanford, CA 94305-4060 (United States)

    2007-12-11

    The BaBar experiment at the Stanford Linear Accelerator Center has been using two polycrystalline chemical vapor deposition (pCVD) diamonds and 12 silicon PIN diodes for radiation monitoring and protection of the Silicon Vertex Tracker (SVT). We have used the pCVD diamonds for more than 3 years, and the PIN diodes for 7 years. We will describe the SVT and SVT radiation monitoring system as well as the operational difficulties and radiation damage effects on the PIN diodes and pCVD diamonds in a high-energy physics environment.

  10. Preparation of Li4Ti5O12 electrode thin films by a mist CVD process with aqueous precursor solution

    Directory of Open Access Journals (Sweden)

    Kiyoharu Tadanaga

    2015-03-01

    Full Text Available Spinel Li4Ti5O12 thin films were prepared by a mist CVD process, using an aqueous solution of lithium nitrate and a water-soluble titanium lactate complex as the source of Li and Ti, respectively. In this process, mist particles ultrasonically atomized from a source aqueous solution were transferred by nitrogen gas to a heating substrate to prepare thin films. Scanning electron microscopy observation showed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 500 nm were obtained. In the X-ray diffraction analysis, formation of Li4Ti5O12 spinel phase was confirmed in the obtained thin film sintered at 700 °C for 4 h. The cell with the thin films as an electrode exhibited a capacity of about 110 mAh g−1, and the cell showed good cycling performance during 10 cycles.

  11. Oxide Dispersion Strengthened Iron Aluminide by CVD Coated Powders

    Energy Technology Data Exchange (ETDEWEB)

    Asit Biswas Andrew J. Sherman

    2006-09-25

    This I &I Category2 program developed chemical vapor deposition (CVD) of iron, aluminum and aluminum oxide coated iron powders and the availability of high temperature oxidation, corrosion and erosion resistant coating for future power generation equipment and can be used for retrofitting existing fossil-fired power plant equipment. This coating will provide enhanced life and performance of Coal-Fired Boilers components such as fire side corrosion on the outer diameter (OD) of the water wall and superheater tubing as well as on the inner diameter (ID) and OD of larger diameter headers. The program also developed a manufacturing route for readily available thermal spray powders for iron aluminide coating and fabrication of net shape component by powder metallurgy route using this CVD coated powders. This coating can also be applid on jet engine compressor blade and housing, industrial heat treating furnace fixtures, magnetic electronic parts, heating element, piping and tubing for fossil energy application and automotive application, chemical processing equipment , heat exchanger, and structural member of aircraft. The program also resulted in developing a new fabrication route of thermal spray coating and oxide dispersion strengthened (ODS) iron aluminide composites enabling more precise control over material microstructures.

  12. VOx effectively doping CVD-graphene for transparent conductive films

    Science.gov (United States)

    Ji, Qinghua; Shi, Liangjing; Zhang, Qinghong; Wang, Weiqi; Zheng, Huifeng; Zhang, Yuzhi; Liu, Yangqiao; Sun, Jing

    2016-11-01

    Chemical vapor deposition(CVD)-synthesized graphene is potentially an alternative for tin-doped indium oxide (ITO) transparent conductive films (TCFs), however its sheet resistance is still too high to meet many demands. Vanadium oxide has been widely applied as smart window materials, however, no study has been reported to use it as dopant to improve the conductivity of graphene TCFs. In this study, we firstly reported that VOx doping can effectively lower the sheet resistance of CVD-graphene films while keeping its good optical properties, whose transmittance is as high as 86-90%. The optimized VOx-doped graphene exhibits a sheet resistance as low as 176 Ω/□, which decreases by 56% compared to the undoped graphene films. The doping process is convenient, stable, economical and easy to operate. What is more, VOx can effectively increase the work function(WF) of the film, making it more appropriate for use in solar cells. The evolution of the VOx species annealed at different temperatures below 400 °C has been detailed studied for the first time, based on which the doping mechanism is proposed. The prepared VOx doped graphene is expected to be a promising candidate for transparent conductive film purposes.

  13. Plasma hearth process demonstration project

    International Nuclear Information System (INIS)

    Geimer, R.M.; Gillins, R.L.

    1995-01-01

    The Plasma Hearth Process (PHP) demonstration project is one of the key technology projects in the US Department of Energy (DOE) Office of Technology Development Mixed Waste Focus Area. The PHP is a high temperature thermal treatment process using a plasma arc torch in a stationary, refractory lined chamber that destroys organics and stabilizes the residuals in a nonleaching, vitrified waste form, greatly improving the disposability of the waste. This paper describes the PHP system and summarizes test results to date, including volume reduction, destruction and removal efficiencies for organic wastes, and emission characteristics. Tests performed so far demonstrate that the PHP adresses DOE mixed waste final waste form requirements and US Environmental Protection Agency Toxicity Characteristic Leaching Procedure requirements

  14. Plasma Assisted Chemical Vapour Deposition – Technological Design Of Functional Coatings

    Directory of Open Access Journals (Sweden)

    Januś M.

    2015-06-01

    Full Text Available Plasma Assisted Chemical Vapour Deposition (PA CVD method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy and improving of the wear resistance (in the case of PEEK substrate.

  15. Utilization of plasmas for graphene synthesis

    Science.gov (United States)

    Shashurin, Alexey; Keidar, Michael

    2013-10-01

    Graphene is a one-atom-thick planar sheet of carbon atoms that are densely packed in a honeycomb crystal lattice. Grapheen has tremendous range of potential applications ranging from high-speed transistors to electrochemical energy storage devices and biochemical sensors. Methods of graphene synthesis include mechanical exfoliation, epitaxial growth on SiC, CVD and colloidal suspensions. In this work the utilization of plasmas in synthesis process is considered. Types of carbonaceous structures produced by the anodic arc and regions of their synthesis were studied. Ultimate role of substrate temperature and transformations occurring with various carbonaceous structures generated in plasma discharge were considered. Formation of graphene film on copper substrate was detected at temperatures around the copper melting point. The film was consisted of several layers graphene flakes having typical sizes of about 200 nm. Time required for crystallization of graphene on externally heated substrates was determined. This work was supported by National Science Foundation (NSF Grant No. CBET-1249213).

  16. Contribution to understanding and controlling a-Si:H thin films growth by mercury-sensitised photo-CVD

    International Nuclear Information System (INIS)

    Barhdadi, A.

    2003-09-01

    Mercury-sensitized photo-CVD technique is widely used for growing amorphous silicon thin films. This attractive method allows damage-free thin film depositions at very low substrate temperatures without the deleterious effects of the other processes. This review reports on the principle and potential of this technique. It also recalls and summarizes some fundamental issues such as experimental systems or apparatus particularities, the analysis of gas-phase reactions in the reactor, the surface-reaction model of SiH 3 and H during the film growth and all the kinetic model for lamp-induced Photo-CVD. (author)

  17. Cutting characteristics of dental diamond burs made with CVD technology Características de corte de pontas odontológicas diamantadas obtidas pela tecnologia CVD

    Directory of Open Access Journals (Sweden)

    Luciana Monti Lima

    2006-04-01

    Full Text Available The aim of this study was to determine the cutting ability of chemical vapor deposition (CVD diamond burs coupled to an ultrasonic dental unit handpiece for minimally invasive cavity preparation. One standard cavity was prepared on the mesial and distal surfaces of 40 extracted human third molars either with cylindrical or with spherical CVD burs. The cutting ability was compared regarding type of substrate (enamel and dentin and direction of handpiece motion. The morphological characteristics, width and depth of the cavities were analyzed and measured using scanning electron micrographs. Statistical analysis using the Kruskal-Wallis test (p O objetivo deste estudo foi determinar a habilidade de corte das pontas de diamante obtidas pelo processo de deposição química a vapor (CVD associadas ao aparelho de ultra-som no preparo cavitário minimamente invasivo. Uma cavidade padronizada foi preparada nas faces mesial e distal de 40 terceiros molares, utilizando-se pontas de diamante CVD cilíndrica e esférica. A habilidade de corte foi comparada quanto ao tipo de substrato (esmalte e dentina e quanto à direção do movimento realizado com a ponta. As características morfológicas, a largura e profundidade das cavidades foram analisadas e medidas em microscopia eletrônica de varredura. A análise estatística pelo teste de Kruskal-Wallis (p < 0,05 revelou que a largura e profundidade das cavidades foram significativamente maiores em dentina. Cavidades mais largas foram obtidas quando se utilizou a ponta de diamante CVD cilíndrica, e mais profundas quando a ponta esférica foi empregada. A direção do movimento da ponta não influenciou o tamanho das cavidades, sendo os cortes produzidos pelas pontas de diamante CVD precisos e conservadores.

  18. Diamond radiation detectors II. CVD diamond development for radiation detectors

    International Nuclear Information System (INIS)

    Kania, D.R.

    1997-01-01

    Interest in radiation detectors has supplied some of the impetus for improving the electronic properties of CVD diamond. In the present discussion, we will restrict our attention to polycrystalhne CVD material. We will focus on the evolution of these materials over the past decade and the correlation of detector performance with other properties of the material

  19. Gaseous material capacity of open plasma jet in plasma spray-physical vapor deposition process

    Science.gov (United States)

    Liu, Mei-Jun; Zhang, Meng; Zhang, Qiang; Yang, Guan-Jun; Li, Cheng-Xin; Li, Chang-Jiu

    2018-01-01

    Plasma spray-physical vapor deposition (PS-PVD) process, emerging as a highly efficient hybrid approach, is based on two powerful technologies of both plasma spray and physical vapor deposition. The maximum production rate is affected by the material feed rate apparently, but it is determined by the material vapor capacity of transporting plasma actually and essentially. In order to realize high production rate, the gaseous material capacity of plasma jet must be fundamentally understood. In this study, the thermal characteristics of plasma were measured by optical emission spectrometry. The results show that the open plasma jet is in the local thermal equilibrium due to a typical electron number density from 2.1 × 1015 to 3.1 × 1015 cm-3. In this condition, the temperature of gaseous zirconia can be equal to the plasma temperature. A model was developed to obtain the vapor pressure of gaseous ZrO2 molecules as a two dimensional map of jet axis and radial position corresponding to different average plasma temperatures. The overall gaseous material capacity of open plasma jet, take zirconia for example, was further established. This approach on evaluating material capacity in plasma jet would shed light on the process optimization towards both depositing columnar coating and a high production rate of PS-PVD.

  20. NEXAFS Study of the Annealing Effect on the Local Structure of FIB-CVD DLC

    International Nuclear Information System (INIS)

    Saikubo, Akihiko; Kato, Yuri; Igaki, Jun-ya; Kanda, Kazuhiro; Matsui, Shinji; Kometani, Reo

    2007-01-01

    Annealing effect on the local structure of diamond like carbon (DLC) formed by focused ion beam-chemical vapor deposition (FIB-CVD) was investigated by the measurement of near edge x-ray absorption fine structure (NEXAFS) and energy dispersive x-ray (EDX) spectra. Carbon K edge absorption NEXAFS spectrum of FIB-CVD DLC was measured in the energy range of 275-320 eV. In order to obtain the information on the location of the gallium in the depth direction, incidence angle dependence of NEXAFS spectrum was measured in the incident angle range from 0 deg. to 60 deg. . The peak intensity corresponding to the resonance transition of 1s→σ* originating from carbon-gallium increased from the FIB-CVD DLC annealed at 200 deg. C to the FIB-CVD DLC annealed at 400 deg. C and decreased from that at 400 deg. C to that at 600 deg. C. Especially, the intensity of this peak remarkably enhanced in the NEXAFS spectrum of the FIB-CVD DLC annealed at 400 deg. C at the incident angle of 60 deg. . On the contrary, the peak intensity corresponding to the resonance transition of 1s→π* originating from carbon double bonding of emission spectrum decreased from the FIB-CVD DLC annealed at 200 deg. C to that at 400 deg. C and increased from that at 400 deg. C to that at 600 deg. C. Gallium concentration in the FIB-CVD DLC decreased from ≅2.2% of the as-deposited FIB-CVD DLC to ≅1.5% of the FIB-CVD DLC annealed at 600 deg. C from the elementary analysis using EDX. Both experimental results indicated that gallium atom departed from FIB-CVD DLC by annealing at the temperature of 600 deg. C

  1. Dense high-temperature plasma transport processes

    International Nuclear Information System (INIS)

    Giniyatova, Sh.G.

    2002-01-01

    In this work the transport processes in dense high-temperature semiclassical plasma are studied on the base of the kinetic equation, where the semiclassical potential was used, in its collision integral. The coefficient of plasma electrical conductivity, viscosity and thermal conductivity were received. There were compared with the other authors' results. The Grad's method was used obtaining of viscosity and thermal coefficients. (author)

  2. Effects of Dietary Macronutrients on Plasma Lipid Levels and the Consequence for Cardiovascular Disease

    Directory of Open Access Journals (Sweden)

    Emilie Daoud

    2014-10-01

    Full Text Available Despite gaining focus, cardiovascular disease (CVD remains the leading cause of death worldwide. Health promotion agencies have traditionally recommended diets that are low in fat in order to reduce CVD risk however, much debate remains about which dietary approaches are the most efficient for effective disease prevention. Common markers of CVD include elevated plasma triglycerides (TG and low-density lipoprotein (LDL cholesterol levels, as well as reduced high-density lipoprotein (HDL cholesterol levels. While weight loss alone can significantly reduce markers of CVD, manipulating dietary macronutrient content contributes to the beneficial effects of weight loss and furthers the improvement of lipid profiles even without the alteration of total caloric intake. Considering the recent attention to diets that are low in carbohydrates rather than fat, it remains to be elucidated the beneficial effects of each diet type when establishing new recommendations for CVD prevention. This review aims to examine the effects of different macronutrient compositions on lipid markers, thus providing insight into the potential roles of various diet types in the targeted prevention against CVD.

  3. A Hybrid Information Mining Approach for Knowledge Discovery in Cardiovascular Disease (CVD

    Directory of Open Access Journals (Sweden)

    Stefania Pasanisi

    2018-04-01

    Full Text Available The healthcare ambit is usually perceived as “information rich” yet “knowledge poor”. Nowadays, an unprecedented effort is underway to increase the use of business intelligence techniques to solve this problem. Heart disease (HD is a major cause of mortality in modern society. This paper analyzes the risk factors that have been identified in cardiovascular disease (CVD surveillance systems. The Heart Care study identifies attributes related to CVD risk (gender, age, smoking habit, etc. and other dependent variables that include a specific form of CVD (diabetes, hypertension, cardiac disease, etc.. In this paper, we combine Clustering, Association Rules, and Neural Networks for the assessment of heart-event-related risk factors, targeting the reduction of CVD risk. With the use of the K-means algorithm, significant groups of patients are found. Then, the Apriori algorithm is applied in order to understand the kinds of relations between the attributes within the dataset, first looking within the whole dataset and then refining the results through the subsets defined by the clusters. Finally, both results allow us to better define patients’ characteristics in order to make predictions about CVD risk with a Multilayer Perceptron Neural Network. The results obtained with the hybrid information mining approach indicate that it is an effective strategy for knowledge discovery concerning chronic diseases, particularly for CVD risk.

  4. Multi-scale Dynamical Processes in Space and Astrophysical Plasmas

    CERN Document Server

    Vörös, Zoltán; IAFA 2011 - International Astrophysics Forum 2011 : Frontiers in Space Environment Research

    2012-01-01

    Magnetized plasmas in the universe exhibit complex dynamical behavior over a huge range of scales. The fundamental mechanisms of energy transport, redistribution and conversion occur at multiple scales. The driving mechanisms often include energy accumulation, free-energy-excited relaxation processes, dissipation and self-organization. The plasma processes associated with energy conversion, transport and self-organization, such as magnetic reconnection, instabilities, linear and nonlinear waves, wave-particle interactions, dynamo processes, turbulence, heating, diffusion and convection represent fundamental physical effects. They demonstrate similar dynamical behavior in near-Earth space, on the Sun, in the heliosphere and in astrophysical environments. 'Multi-scale Dynamical Processes in Space and Astrophysical Plasmas' presents the proceedings of the International Astrophysics Forum Alpbach 2011. The contributions discuss the latest advances in the exploration of dynamical behavior in space plasmas environm...

  5. CVD diamond based soft X-ray detector with fast response

    International Nuclear Information System (INIS)

    Li Fang; Hou Lifei; Su Chunxiao; Yang Guohong; Liu Shenye

    2010-01-01

    A soft X-ray detector has been made with high quality chemical vapor deposited (CVD) diamond and the electrical structure of micro-strip. Through the measurement of response time on a laser with the pulse width of 10 ps, the full width at half maximum of the data got in the oscilloscope was 115 ps. The rise time of the CVD diamond detector was calculated to be 49 ps. In the experiment on the laser prototype facility, the signal got by the CVD diamond detector was compared with that got by a soft X-ray spectrometer. Both signals coincided well. The detector is proved to be a kind of reliable soft X-ray detector with fast response and high signal-to-noise ratio. (authors)

  6. CVD polycrystalline diamond. A novel neutron detector and applications

    International Nuclear Information System (INIS)

    Mongkolnavin, R.

    1998-01-01

    Chemical Vapour Deposition (CVD) Polycrystalline Diamond film has been investigated as a low noise sensor for beta particles, gammas and neutrons using High Energy Physics technologies. Its advantages and disadvantages have been explored in comparison with other particle detectors such as silicon detector and other plastic scintillators. The performance and characteristic of the diamond detector have been fully studied and discussed. These studies will lead to a better understanding of how CVD diamonds perform as a detector and how to improve their performance under various conditions. A CVD diamond detector model has been proposed which is an attempt to explain the behaviour of such an extreme detector material. A novel neutron detector is introduced as a result of these studies. A good thermal and fast neutron detector can be fabricated with CVD diamond with new topologies. This detector will perform well without degradation in a high neutron radiation environment, as diamond is known to be radiation hard. It also offers better neutrons and gammas discrimination for high gamma background applications compared to other semiconductor detectors. A full simulation of the detector has also been done using GEANT, a Monte-Carlo simulation program for particle detectors. Simulation results show that CVD diamond detectors with this novel topology can detect neutrons with great directionality. Experimental work has been done on this detector in a nuclear reactor environment and accelerator source. A novel neutron source which offers a fast pulse high-energy neutrons has also been studied. With this detector, applications in neutron spectrometer for low-Z material have been pursued with various neutron detection techniques. One of these is a low-Z material identification system. The system has been designed and simulated for contraband luggage interrogation using the detector and the novel neutron source. Also other neutron related applications have been suggested. (author)

  7. CVD polycrystalline diamond. A novel neutron detector and applications

    International Nuclear Information System (INIS)

    Mongkolnavin, R.

    1998-07-01

    Chemical Vapour Deposition (CVD) Polycrystalline Diamond film has been investigated as a low noise sensor for beta particles, gammas and neutrons using High Energy Physics technologies. Its advantages and disadvantages have been explored in comparison with other particle detectors such as silicon detector and other plastic scintillators. The performance and characteristic of the diamond detector have been fully studied and discussed. These studies will lead to a better understanding of how CVD diamonds perform as a detector and how to improve their performance under various conditions. A CVD diamond detector model has been proposed which is an attempt to explain the behaviour of such an extreme detector material. A novel neutron detector is introduced as a result of these studies. A good thermal and fast neutron detector can be fabricated with CVD diamond with new topologies. This detector will perform well without degradation in a high neutron radiation environment, as diamond is known to be radiation-hard. It also offers better neutrons and gammas discrimination for high gamma background applications compared to other semiconductor detectors. A full simulation of the detector has also been done using GEANT, a Monte Carlo simulation program for particle detectors. Simulation results show that CVD diamond detectors with this novel topology can detect neutrons with great directionality. Experimental work has been done on this detector in a nuclear reactor environment and accelerator source. A novel neutron source which offers a fast pulse high-energy neutrons has also been studied. With this detector, applications in neutron spectrometry for low-Z material have been pursued with various neutron detection techniques. One of these is a low-Z material identification system. The system has been designed and simulated for contraband luggage interrogation using the detector and the novel neutron source. (author)

  8. Cluster processes in gases and plasmas

    CERN Document Server

    Smirnov, Boris M

    2009-01-01

    Boris M. Smirnov received his Ph.D. in physics from Leningrad State University in 1968. After working in different research positions, he finally accepted a post as head of one of the divisions of the Institute for High Temperatures at the Russian Academy of Sciences in Moscow in 1986. Professor Smirnov is the author and co-author of approximately 50 books as well as 400 research articles in plasma physics, atomic physics, and atomic clusters. He is Vice Chairman of the National Council for Low Temperature Plasma and Chairman ofa Section on Elementary Processes in Plasma. Professor Smirnov`s r

  9. Variables and advantages of the polymerization process in plasma

    International Nuclear Information System (INIS)

    Rojas, Andres F; Ortiz, Jairo A; Restrepo, Elizabeth; Devia Alfonso

    1998-01-01

    They are given to know the parameters that affect the polymerization process in plasma like they are: the kinetics, the electric joining, the variables related to the substrata and the interaction plasma/surface. Some advantages of the polymerization process are also presented with regard to the conventional processes

  10. Tungsten-rhenium composite tube fabricated by CVD for application in 18000C high thermal efficiency fuel processing furnace

    International Nuclear Information System (INIS)

    Svedberg, R.C.; Bowen, W.W.; Buckman, R.W. Jr.

    1980-04-01

    Chemical Vapor Deposit (CVD) rhenium was selected as the muffle material for an 1800 0 C high thermal efficiency fuel processing furnace. The muffle is exposed to high vacuum on the heater/insulation/instrumentation side and to a flowing argon-8 V/0 hydrogen gas mixture at one atmosphere pressure on the load volume side. During operation, the muffle cycles from room temperature to 1800 0 C and back to room temperature once every 24 hours. Operational life is dependent on resistance to thermal fatigue during the high temperature exposure. For a prototypical furnace, the muffle is approximately 13 cm I.D. and 40 cm in length. A small (about one-half size) rhenium closed end tube overcoated with tungsten was used to evaluate the concept. The fabrication and testing of the composite tungsten-rhenium tube and prototypic rhenium muffle is described

  11. Plasma nitriding - an eco friendly surface hardening process

    International Nuclear Information System (INIS)

    Mukherjee, S.

    2015-01-01

    Surface hardening is a process of heating the metal such that the surface gets only hardened. This process is adopted for many components like gears, cams, and crankshafts, which desire high hardness on the outer surface with a softer core to withstand the shocks. So, to attain such properties processes like carburising, nitriding, flame hardening and induction hardening are employed. Amongst these processes nitriding is the most commonly used process by many industries. In nitriding process the steel material is heated to a temperature of around 550 C and then exposed to atomic nitrogen. This atomic nitrogen reacts with iron and other alloying elements and forms nitrides, which are very hard in nature. By this process both wear resistance and hardness of the product can be increased. The atomic nitrogen required for this process can be obtained using ammonia gas (gas nitriding), cyanide based salt bath (liquid nitriding) and plasma medium (plasma nitriding). However, plasma nitriding has recently received considerable industrial interest owing to its characteristic of faster nitrogen penetration, short treatment time, low process temperature, minimal distortion, low energy use and easier control of layer formation compared with conventional techniques such as gas and liquid nitriding. This process can be used for all ferrous materials including stainless steels. Plasma nitriding is carried out using a gas mixture of nitrogen and hydrogen gas at sub atmospheric pressures hence, making it eco-friendly in nature. Plasma nitriding allows modification of the surface layers and hardness profiles by changing the gas mixture and temperature. The wide applicable temperature range enables a multitude of applications, beyond the possibilities of gas or salt bath processes. This has led to numerous applications of this process in industries such as the manufacture of machine parts for plastics and food processing, packaging and tooling as well as pumps and hydraulic, machine

  12. A Study on Decontamination Process Using Atmospheric Pressure Plasma

    International Nuclear Information System (INIS)

    Kim, Yong Soo; Jeon, Sang Hwan; Jin, Dong Sik; Park, Dong Min

    2010-05-01

    Radioactive decontamination process using atmospheric pressure plasma which can be operated parallel with low vacuum cold plasma processing is studied. Two types of cold plasma torches were designed and manufactured. One of them is the cylindrical type applicable to the treatment of three-dimensional surfaces. The other is the rectangular type for the treatment of flat and large surface areas. Ar palsam was unstable but using He as a carrier gas, discharge condition was improved. Besides filtering module using pre, medium, charcoal, and HEPA filter was designed and manufactured. More intensive study for developing filtering system will be followed. Atmospheric pressure plasma decontamination process can be used to the equipment and facility wall decontamination

  13. CVD-graphene growth on different polycrystalline transition metals

    Directory of Open Access Journals (Sweden)

    M. P. Lavin-Lopez

    2017-01-01

    Full Text Available The chemical vapor deposition (CVD graphene growth on two polycrystalline transition metals (Ni and Cu was investigated in detail using Raman spectroscopy and optical microscopy as a way to synthesize graphene of the highest quality (i.e. uniform growth of monolayer graphene, which is considered a key issue for electronic devices. Key CVD process parameters (reaction temperature, CH4/H2flow rate ratio, total flow of gases (CH4+H2, reaction time were optimized for both metals in order to obtain the highest graphene uniformity and quality. The conclusions previously reported in literature about the performance of low and high carbon solubility metals in the synthesis of graphene and their associated reaction mechanisms, i.e. surface depositionand precipitation on cooling, respectively, was not corroborated by the results obtained in this work. Under the optimal reaction conditions, a large percentage of monolayer graphene was obtained over the Ni foil since the carbon saturation was not complete, allowing carbon atoms to be stored in the bulk metal, which could diffuse forming high quality monolayer graphene at the surface. However, under the optimal reaction conditions, the formation of a non-uniform mixture of few layers and multilayer graphene on the Cu foil was related to the presence of an excess of active carbon atoms on the Cu surface.

  14. FY 1999 achievement report on the project on the R and D of university-cooperation industrial science technology. Semiconductor device production process by Cat-CVD method (Semiconductor device production process by Cat-CVD method); 1999 nendo Cat-CVD ho ni yoru handotai device seizo process seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The paper described the results obtained by FY 1999 of the semiconductor device production using the catalytic chemical vapor deposition method. As to the thermal fluid simulation modeling in the thermal insulation thin film formation process, elucidated were the decomposition rate (40%) of SiH{sub 4} gas on catalyst body and the gas use efficiency (60% in two collisions with catalyst body). The range where the gas flow has effects was made clear. In researches on the substrate temperature control and catalyst body structure, thermal radiation effects from catalyst body were evaluated, which led to a success in high-speed deposition of high-quality a-Si. Concerning the optical monitor technology in film deposition, the identification of decomposition species (Si, etc.) and temperature of decomposition species could be made clear. Effects of pollutant removal were also monitored. Relating to the basic technology for thermal insulation thin film formation, conditions for Si nitride film formation were made clear, and stoichiometric composition films of Si{sub 3}N{sub 4} were acquired at low temperature of 300 degrees C. Also acquired were high etching resistant/high wetting resistant films. As to the ultra-high purity thin film formation, it was successful to find out the metal pollution resource and remove it. In regard to the Cat-CVD application on to metal oxide ferroelectric substances, low temperature Si{sub 3}N{sub 4} films could be formed at deposition speed of 20nm/min. by making the temperature condition (200 degrees C or less) clear and controlling the substrate temperature. (NEDO)

  15. Protection of active implant electronics with organosilicon open air plasma coating for plastic overmolding

    Directory of Open Access Journals (Sweden)

    Zeppenfeld Matthias

    2016-09-01

    Full Text Available To overcome challenges for manufacturing of modern smart medical plastic parts by injection molding, e.g. for active implants, the optimization of the interface between electronics and the polymer component concerning adhesion and diffusion behavior is crucial. Our results indicate that a nano-sized SiOxCyHz layer formed by plasma-enhanced chemical vapour deposition (PE-CVD via open air atmospheric pressure plasma jet (APPJ and by use of a hexamthyldisiloxane (HMDSO precursor can form a non-corrosive, anti-permeable and biocompatible coating. Due to the open air character of the APPJ process an inline coating before overmolding could be an easy applicable method and a promising advancement.

  16. Technology and plasma-materials interaction processes of tokamak disruptions

    International Nuclear Information System (INIS)

    McGrath, R.T.; Kellman, A.G.

    1992-01-01

    A workshop on the technology and plasma-materials interaction processes of tokamak disruptions was held April 3, 1992 in Monterey, California, as a satellite meeting of the 10th International Conference on Plasma-Surface Interactions. The objective was to bring together researchers working on disruption measurements in operating tokamaks, those performing disruption simulation experiments using pulsed plasma gun, electron beam and laser systems, and computational physicists attempting to model the evolution and plasma-materials interaction processes of tokamak disruptions. This is a brief report on the workshop. 4 refs

  17. Hard graphitelike hydrogenated amorphous carbon grown at high rates by a remote plasma

    DEFF Research Database (Denmark)

    Singh, Shailendra Vikram; Zaharia, T.; Creatore, M.

    2010-01-01

    Hydrogenated amorphous carbon (a-C:H) deposited from an Ar-C 2H2 expanding thermal plasma chemical vapor deposition (ETP-CVD) is reported. The downstream plasma region of an ETP is characterized by a low electron temperature (∼0.3 eV), which leads to an ion driven chemistry and negligible physical...

  18. Atomic processes in high temperature plasmas

    International Nuclear Information System (INIS)

    Hahn, Y.

    1991-07-01

    This is the final report on the project Atomic Processes in High Temperature Plasmas', which has been completed in June 30, 1991. The original contract started in 1978. The dielectronic recombination (DR) rate coefficients were calculated for ions with the number of electrons N = 1, 2, 3, 4, 5, 10, 11, and 12. The result was then used to construct a new and improved rate formula. Other important resonant processes, which are closely related to DR, were also studied to interpret experiments and to test the DR theory. The plasma field and the density effects on the rate coefficients was found to be important, and a consistent correction procedure is being developed. The available data on the DR rates and their accuracy do not yet fully meet the requirement for plasma modeling; there are serious gaps in the available data, and the currently adopted theoretical procedure needs improvements. Critical assessment of the current status of the DR problem is presented, and possible future work needed is summarized

  19. Two-Step Plasma Process for Cleaning Indium Bonding Bumps

    Science.gov (United States)

    Greer, Harold F.; Vasquez, Richard P.; Jones, Todd J.; Hoenk, Michael E.; Dickie, Matthew R.; Nikzad, Shouleh

    2009-01-01

    A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.

  20. Flavonoids and Reduction of Cardiovascular Disease (CVD) in Chronic Obstructive Pulmonary Disease (COPD).

    Science.gov (United States)

    Russo, Patrizia; Prinzi, Giulia; Lamonaca, Palma; Cardaci, Vittorio; Fini, Massimo

    2018-05-13

    Chronic obstructive pulmonary disease (COPD) and cardiovascular diseases (CV) often coexist. COPD and CVD are complex diseases characterized by a strict interaction between environment and genetic. The mechanisms linking these two diseases are complex, multifactorial and not entirely understood, influencing the therapeutic approach. COPD is characterized by several comorbidities, it is hypothesizable that treatment of cardiovascular co-morbidities may reduce morbidity and mortality. Flavonoids are an important class of plant low molecular weight secondary metabolites (SMs). Convincing data from laboratory, epidemiological, and human clinical studies point to an important effects on CVD risk prevention. This review aims to provide up-to-date information on the ability of Flavonoids to reduce the CVD risk. Current studies support the potential of Flavonoids to prevent the risk of CVD. Well-designed clinical studies are suggested to evaluate advantages and limits of Flavonoids for managing CVD comorbidity in COPD. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

  1. Synthesis of functional nanocrystallites through reactive thermal plasma processing

    Directory of Open Access Journals (Sweden)

    Takamasa Ishigaki and Ji-Guang Li

    2007-01-01

    Full Text Available A method of synthesizing functional nanostructured powders through reactive thermal plasma processing has been developed. The synthesis of nanosized titanium oxide powders was performed by the oxidation of solid and liquid precursors. Quench gases, either injected from the shoulder of the reactor or injected counter to the plasma plume from the bottom of the reactor, were used to vary the quench rate, and therefore the particle size, of the resultant powders. The experimental results are well supported by numerical analysis on the effects of the quench gas on the flow pattern and temperature field of the thermal plasma as well as on the trajectory and temperature history of the particles. The plasma-synthesized TiO2 nanoparticles showed phase preferences different from those synthesized by conventional wet-chemical processes. Nanosized particles of high crystallinity and nonequilibrium chemical composition were formed in one step via reactive thermal plasma processing.

  2. Atmospheric plasma processes for environmental applications

    OpenAIRE

    Shapoval, Volodymyr

    2012-01-01

    Plasma chemistry is a rapidly growing field which covers applications ranging from technological processing of materials, including biological tissues, to environmental remediation and energy production. The so called atmospheric plasma, produced by electric corona or dielectric barrier discharges in a gas at atmospheric pressure, is particularly attractive for the low costs and ease of operation and maintenance involved. The high concentrations of energetic and chemically active species (e.g...

  3. Plasma-assisted synthesis of MoS2

    Science.gov (United States)

    Campbell, Philip M.; Perini, Christopher J.; Chiu, Johannes; Gupta, Atul; Ray, Hunter S.; Chen, Hang; Wenzel, Kevin; Snyder, Eric; Wagner, Brent K.; Ready, Jud; Vogel, Eric M.

    2018-03-01

    There has been significant interest in transition metal dichalcogenides (TMDs), including MoS2, in recent years due to their potential application in novel electronic and optical devices. While synthesis methods have been developed for large-area films of MoS2, many of these techniques require synthesis temperatures of 800 °C or higher. As a result of the thermal budget, direct synthesis requiring high temperatures is incompatible with many integrated circuit processes as well as flexible substrates. This work explores several methods of plasma-assisted synthesis of MoS2 as a way to lower the synthesis temperature. The first approach used is conversion of a naturally oxidized molybdenum thin film to MoS2 using H2S plasma. Conversion is demonstrated at temperatures as low as 400 °C, and the conversion is enabled by hydrogen radicals which reduce the oxidized molybdenum films. The second method is a vapor phase reaction incorporating thermally evaporated MoO3 exposed to a direct H2S plasma, similar to chemical vapor deposition (CVD) synthesis of MoS2. Synthesis at 400 °C results in formation of super-stoichiometric MoS2 in a beam-interrupted growth process. A final growth method relies on a cyclical process in which a small amount of Mo is sputtered onto the substrate and is subsequently sulfurized in a H2S plasma. Similar results could be realized using an atomic layer deposition (ALD) process to deposit the Mo film. Compared to high temperature synthesis methods, the lower temperature samples are lower quality, potentially due to poor crystallinity or higher defect density in the films. Temperature-dependent conductivity measurements are consistent with hopping conduction in the plasma-assisted synthetic MoS2, suggesting a high degree of disorder in the low-temperature films. Optimization of the plasma-assisted synthesis process for slower growth rate and better stoichiometry is expected to lead to high quality films at low growth temperature.

  4. A 3D tomographic EBSD analysis of a CVD diamond thin film

    International Nuclear Information System (INIS)

    Liu Tao; Raabe, Dierk; Zaefferer, Stefan

    2008-01-01

    We have studied the nucleation and growth processes in a chemical vapor deposition (CVD) diamond film using a tomographic electron backscattering diffraction method (3D EBSD). The approach is based on the combination of a focused ion beam (FIB) unit for serial sectioning in conjunction with high-resolution EBSD. Individual diamond grains were investigated in 3-dimensions particularly with regard to the role of twinning.

  5. Sawtooth oscillations as MHD relaxation process in a plasma

    International Nuclear Information System (INIS)

    Yoshida, Zensho; Inoue, Nobuyuki; Ogawa, Yuichi

    1992-01-01

    The sawtooth oscillation in a tokamak plasma is a spontaneous relaxation process accompanying global instabilities which behave to reduce the internal magnetic energy. This phenomenon has a similarity to the MHD relaxation processes in Reversed Field Pinch (RFP) and Ultra Low Q (ULQ) plasmas. The self-stabilizing effect of instabilities with m (poloidal mode number) = 1 results in an increase in the central safety factor q(0). Nonlinear dynamics of m = 1 instabilities has been discussed both for global and local modes. The latter appears when a pitch minimum exists in the plasma, and is relevant to the compound sawtooth oscillation. The MHD relaxation is a restructuring process of the plasma current profile that is competitive with the resistive diffusion. (author)

  6. Development of plasma cutting process at observation of environmental requirements

    International Nuclear Information System (INIS)

    Czech, J.; Matusiak, J.; Pasek-Siurek, H.

    1997-01-01

    Plasma cutting is one of the basic methods for thermal cutting of metals. It is characterized by high productivity and quality of the cut surface. However, the plasma cutting process is one of the most harmful processes for environment and human health. It results from many agents being a potential environmental risk The large amount of dust and gases emitted during the process as well as an intensive radiation of electric arc and excessive noise are considered as the most harmful hazards. The existing ventilation and filtration systems are not able to solve all problems resulting from the process. Plasma cutting under water is worthy of notice, especially during an advancement of plasma cutting process, because of human safety and environment protection. Such a solution allows to reduce considerably the emission of dust and gases, as well as to decrease the noise level and ultraviolet radiation. An additional advantage of underwater plasma cutting is a reduction in the width of material heating zone and a decrease in strains of elements being cut. However, the productivity of this process is a little lower what results in an increase in cutting cost. In the paper, it has been presented the results of the investigations made at the Institute of Welding in Gliwice on the area of plasma cutting equipment with energy-saving inverter power supplies used in automated processes of underwater plasma cutting as well as the results of testing of welding environment contamination and safety hazards. (author)

  7. Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures

    Science.gov (United States)

    Gurram, M.; Omar, S.; Zihlmann, S.; Makk, P.; Li, Q. C.; Zhang, Y. F.; Schönenberger, C.; van Wees, B. J.

    2018-01-01

    We study room-temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapor deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN substrate. We find mobilities and spin-relaxation times comparable to that of SiO2 substrate-based graphene devices, and we obtain a similar order of magnitude of spin relaxation rates for both the Elliott-Yafet and D'Yakonov-Perel' mechanisms. The behavior of ferromagnet/two-layer-CVD-hBN/graphene/hBN contacts ranges from transparent to tunneling due to inhomogeneities in the CVD-hBN barriers. Surprisingly, we find both positive and negative spin polarizations for high-resistance two-layer-CVD-hBN barrier contacts with respect to the low-resistance contacts. Furthermore, we find that the differential spin-injection polarization of the high-resistance contacts can be modulated by dc bias from -0.3 to +0.3 V with no change in its sign, while its magnitude increases at higher negative bias. These features point to the distinctive spin-injection nature of the two-layer-CVD-hBN compared to the bilayer-exfoliated-hBN tunnel barriers.

  8. VO{sub x} effectively doping CVD-graphene for transparent conductive films

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Qinghua; Shi, Liangjing [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Zhang, Qinghong [State Key Laboratory of Modification of Chemical Fibers and Polymer Materials, College of Material Science and Engineering, Donghua University, 2999 North Renmin Road, Shanghai 201620 (China); Wang, Weiqi; Zheng, Huifeng [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Zhang, Yuzhi [The Key Laboratory of Inorganic Coating Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences,1295 Dingxi Road, Shanghai 200050 (China); Liu, Yangqiao, E-mail: yqliu@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Sun, Jing, E-mail: jingsun@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

    2016-11-30

    Highlights: • Doping process operated easily. • Sheet resistance decreased efficiently after doping. • Sheet resistance of doped graphene is stable after exposed in the air. • Mechanism of doping process is studied. - Abstract: Chemical vapor deposition(CVD)-synthesized graphene is potentially an alternative for tin-doped indium oxide (ITO) transparent conductive films (TCFs), however its sheet resistance is still too high to meet many demands. Vanadium oxide has been widely applied as smart window materials, however, no study has been reported to use it as dopant to improve the conductivity of graphene TCFs. In this study, we firstly reported that VO{sub x} doping can effectively lower the sheet resistance of CVD-graphene films while keeping its good optical properties, whose transmittance is as high as 86–90%. The optimized VO{sub x}-doped graphene exhibits a sheet resistance as low as 176 Ω/□, which decreases by 56% compared to the undoped graphene films. The doping process is convenient, stable, economical and easy to operate. What is more, VO{sub x} can effectively increase the work function(WF) of the film, making it more appropriate for use in solar cells. The evolution of the VO{sub x} species annealed at different temperatures below 400 °C has been detailed studied for the first time, based on which the doping mechanism is proposed. The prepared VO{sub x} doped graphene is expected to be a promising candidate for transparent conductive film purposes.

  9. CVD diamonds as thermoluminescent detectors for medical applications

    International Nuclear Information System (INIS)

    Marczewska, B.; Olko, P.; Nesladek, M.; Waligorski, M.P.R.; Kerremans, Y.

    2002-01-01

    Diamond is believed to be a promising material for medical dosimetry due to its tissue equivalence, mechanical and radiation hardness, and lack of solubility in water or in disinfecting agents. A number of diamond samples, obtained under different growth conditions at Limburg University, using the chemical vapour deposition (CVD) technique, was tested as thermoluminescence dosemeters. Their TL glow curve, TL response after doses of gamma rays, fading, and so on were studied at dose levels and for radiation modalities typical for radiotherapy. The investigated CVD diamonds displayed sensitivity comparable with that of MTS-N (Li:Mg,Ti) detectors, signal stability (reproducibility after several readouts) below 10% (1 SD) and no fading was found four days after irradiation. A dedicated CVD diamond plate was grown, cut into 20 detector chips (3x3x0.5 mm) and used for measuring the dose-depth distribution at different depths in a water phantom, for 60 Co and six MV X ray radiotherapy beams. Due to the sensitivity of diamond to ambient light, it was difficult to achieve reproducibility comparable with that of standard LiF detectors. (author)

  10. Defining the relationship between COPD and CVD: what are the implications for clinical practice?

    Science.gov (United States)

    Morgan, Ann D; Zakeri, Rosita; Quint, Jennifer K

    2018-01-01

    Cardiovascular diseases (CVDs) are arguably the most important comorbidities in chronic obstructive pulmonary disease (COPD). CVDs are common in people with COPD, and their presence is associated with increased risk for hospitalization, longer length of stay and all-cause and CVD-related mortality. The economic burden associated with CVD in this population is considerable and the cumulative cost of treating comorbidities may even exceed that of treating COPD itself. Our understanding of the biological mechanisms that link COPD and various forms of CVD has improved significantly over the past decade. But despite broad acceptance of the prognostic significance of CVDs in COPD, there remains widespread under-recognition and undertreatment of comorbid CVD in this population. The reasons for this are unclear; however institutional barriers and a lack of evidence-based guidelines for the management of CVD in people with COPD may be contributory factors. In this review, we summarize current knowledge relating to the prevalence and incidence of CVD in people with COPD and the mechanisms that underlie their coexistence. We discuss the implications for clinical practice and highlight opportunities for improved prevention and treatment of CVD in people with COPD. While we advocate more active assessment for signs of cardiovascular conditions across all age groups and all stages of COPD severity, we suggest targeting those aged under 65 years. Evidence indicates that the increased risks for CVD are particularly pronounced in COPD patients in mid-to-late-middle-age and thus it is in this age group that the benefits of early intervention may prove to be the most effective. PMID:29355081

  11. Development of CVD diamond radiation detectors

    CERN Document Server

    Adam, W; Berdermann, E; Bogani, F; Borchi, E; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fisch, D; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E A; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Knöpfle, K T; Krammer, Manfred; Manfredi, P F; Meier, D; Mishina, M; Le Normand, F; Pan, L S; Pernegger, H; Pernicka, Manfred; Pirollo, S; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Turchetta, R; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zoeller, M M

    1998-01-01

    Diamond is a nearly ideal material for detecting ionizing radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow a diamond detector to be used in high ra diation, high temperature and in aggressive chemical media. We have constructed charged particle detectors using high quality CVD diamond. Characterization of the diamond samples and various detect ors are presented in terms of collection distance, $d=\\mu E \\tau$, the average distance electron-hole pairs move apart under the influence of an electric field, where $\\mu$ is the sum of carrier mo bilities, $E$ is the applied electric field, and $\\tau$ is the mobility weighted carrier lifetime. Over the last two years the collection distance increased from $\\sim$ 75 $\\mu$m to over 200 $\\mu$ m. With this high quality CVD diamond a series of micro-strip and pixel particle detectors have been constructed. These devices were tested to determine their position resolution and signal to n oise performance. Diamond detectors w...

  12. Plasma Processes of Cutting and Welding

    Science.gov (United States)

    1976-02-01

    TIG process. 2.2.2 Keyhole Welding In plasma arc welding , the term...Cutting 3 3 4 4 4 2.2 Plasma Arc Welding 5 2.2.1 Needle Arc Welding 2.2.2 Keyhole Welding 5 6 3. Applications 8 93.1 Economics 4. Environmental Aspects of...Arc Lengths III. Needle Arc Welding Conditions IV. Keyhole Welding Conditions v. Chemical Analyses of Plates Used - vii - 1. 2. 3. 4. 5. 6. 7. 8.

  13. Plasma processes and film growth of expanding thermal plasma deposited textured zinc oxide

    NARCIS (Netherlands)

    Groenen, R.; Linden, J.L.; Sanden, van de M.C.M.

    2005-01-01

    Plasma processes and film growth of textured zinc oxide deposited from oxygen and diethyl zinc utilizing expanding thermal argon plasma created by a cascaded arc is discussed. In all conditions explored, an excess of argon ions and low temperature electrons is available, which represent the

  14. Status and challenges in electrical diagnostics of processing plasmas

    DEFF Research Database (Denmark)

    Stamate, Eugen

    2014-01-01

    Dry processing based on reactive plasmas was the main driven force for micro- and recently nano-electronic industry. Once with the increasing in plasma complexity new diagnostics methods have been developed to ensure a proper process control during etching, thin film deposition, ion implantation...

  15. Thermoluminescence properties of undoped diamond films deposited using HF CVD technique

    Directory of Open Access Journals (Sweden)

    Paprocki K.

    2018-03-01

    Full Text Available Natural diamond has been considered as a perspective material for clinical radiation dosimetry due to its tissuebiocompatibility and chemical inertness. However, the use of natural diamond in radiation dosimetry has been halted by the high market price. The recent progress in the development of CVD techniques for diamond synthesis, offering the capability of growing high quality diamond layers, has renewed the interest in using this material in radiation dosimeters having small geometricalsizes. Polycrystalline CVD diamond films have been proposed as detectors and dosimeters of β and α radiation with prospective applications in high-energy photon dosimetry. In this work, we present a study on the TL properties of undoped diamond film samples grown by the hot filament CVD (HF CVD method and exposed to β and α radiation. The glow curves for both types of radiation show similar character and can be decomposed into three components. The dominant TL peaks are centered at around 610 K and exhibit activation energy of the order of 0.90 eV.

  16. CVD calibration light systems specifications. Rev. 0

    International Nuclear Information System (INIS)

    Mcllwain, A. K.

    1992-04-01

    Two prototype Cerenkov Viewing Device Calibration Light systems for the Mark IV CVD have been fabricated. They consist of a maintenance unit that will be used by the IAEA maintenance staff and a field unit that will be used by IAEA inspectors. More detailed information on the design of the calibration units can be obtained from the document SSP-39 and additional information on the Mark IV CVD can be obtained from the operating manual published as Canadian Safeguards Support Program document CSSP 6. The specifications refer to the prototype units which will be demonstrated to the IAEA in 1992 May. Based upon the feedback from the IAEA, the instruments will be changed in the final production models to provide devices that more closely satisfy the needs of the end users

  17. Radiative processes in a laser-fusion plasma

    International Nuclear Information System (INIS)

    Campbell, P.M.; Kubis, J.J.; Mitrovich, D.

    1976-01-01

    Plasmas compressed and heated by an intense laser pulse offer promise for the ignition of propagating thermonuclear burn and, ultimately, for use in fusion reactors. It is evident theoretically that the emission and absorption of x-rays by the plasma has a significant effect on the dynamics of the laser compression process. In order to achieve densities high enough for efficient thermonuclear burn, the fusion pellet must be compressed along a low adiabat. This will not be possible if the compressed region of the pellet is significantly preheated by x-rays originating in the hot outer regions. A satisfactory model of compression hydrodynamics must, therefore, include a comprehensive treatment of radiation transport based on a non-LTE model of the plasma. The model must be valid for Fermi-Dirac statistics, since high compression along a low adiabat will, in general, produce degenerate electron distributions. This report is concerned with the plasma model and the corresponding radiation emission and absorption coefficients, including nonthermal processes which occur in the laser deposition region

  18. A 3D tomographic EBSD analysis of a CVD diamond thin film

    Directory of Open Access Journals (Sweden)

    Tao Liu, Dierk Raabe and Stefan Zaefferer

    2008-01-01

    Full Text Available We have studied the nucleation and growth processes in a chemical vapor deposition (CVD diamond film using a tomographic electron backscattering diffraction method (3D EBSD. The approach is based on the combination of a focused ion beam (FIB unit for serial sectioning in conjunction with high-resolution EBSD. Individual diamond grains were investigated in 3-dimensions particularly with regard to the role of twinning.

  19. Recent Results from Beam Tests of 3D and Pad pCVD Diamond Detectors

    CERN Document Server

    Wallny, Rainer

    2017-01-01

    Results from prototypes of a detector using chemical vapor deposited (CVD) diamond with embedded resistive electrodes in the bulk forming a 3D diamond device are presented. A detector system consisting of 3D devices based on poly-crystalline CVD (pCVD) diamond was connected to a multi-channel readout and successfully tested in a 120 GeV/c proton beam at CERN proving for the first time the feasibility of the 3D detector concept in pCVD for particle tracking applications. We also present beam test results on the dependence of signal size on incident particle rate in charged particle detectors based on poly-crystalline CVD diamond. The detectors were tested in a 260 MeV/c pion beam over a range of particle fluxes from 2 kHz/cm2 to 10 MHz/cm2 . The pulse height of the sensors was measured with pad readout electronics at a peaking time of 7 ns. Our data from the 2015 beam tests at PSI indicate that the pulse height of poly-crystalline CVD diamond sensor irradiated to 5×1014 neq/cm2 is independent of particle flux...

  20. An experimental facility for microwave induced plasma processing of materials

    International Nuclear Information System (INIS)

    Patil, D.S.; Ramachandran, K.; Bhide, A.L.; Venkatramani, N.

    1997-01-01

    Microwave induced plasma processing offers many advantages over conventional processes. However this technology is in the development stage. This report gives a detailed information about a microwave plasma processing facility (2.45 GHz, 700 W) set up in the Laser and Plasma Technology Division. The equipment details and the results obtained on deposition of diamond like carbon (DLC) thin films and surface modification of polymer PET (polyethylene terephthalate) using this facility are given in this report. (author)

  1. Organo-Functionalization of Silicon Nanocrystals Synthesized by Inductively Coupled Plasma Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Don-Sung; Choe, Dong-Hoe; Jeong, Hyun-Dam [Chonnam National University, Gwangju (Korea, Republic of); Yoo, Seung-Wan; Kim, Jung-Hyung [Korea Research Institute of Standards and Science, Daejeon (Korea, Republic of)

    2016-05-15

    Octadecyl-terminated silicon nanocrystals (ODE-Si NCs) are obtained via a surface-initiated thermal hydrosilylation reaction on hydride-terminated Si NCs (H-Si NCs). Pristine Si NCs were synthesized at the gram scale by using inductively coupled plasma chemical vapor deposition (ICP-CVD) . The H-Si NCs were produced through a chemical etching process with hydrofluoric acid (HF), ethanol (EtOH), and distilled water (d-H{sub 2}O). The results obtained from X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) indicate that the synthesized Si NCs obtained via ICP-CVD have diamond cubic-structured silicon with a grain size of 10 nm and a densely packed Si NC array consisting of individual NCs. Organo-functionalized Si NCs, i.e., ODE-Si NCs, are well soluble in organic solvent whereas pristine Si NCs synthesized through ICP-CVD are not. The surface chemistry of the ODE-Si NCs was confirmed via Fourier transform infrared spectroscopy (FT-IR), proton nuclear magnetic resonance spectroscopy ({sup 1}H-NMR), and field emission transmission electron microscopy (FE-TEM). Thereby, these newly synthesized and scalable organo-functionalized Si NCs are applicable as raw materials for practical use in devices by tuning the surface chemistry with various capping molecules.

  2. Analysis of processes in DC arc plasma torches for spraying that use air as plasma forming gas

    International Nuclear Information System (INIS)

    Frolov, V; Ivanov, D; Toropchin, A

    2014-01-01

    Developed in Saint Petersburg State Polytechnical University technological processes of air-plasma spraying of wear-resistant, regenerating, hardening and decorative coatings used in number of industrial areas are described. The article contains examples of applications of air plasma spraying of coatings as well as results of mathematical modelling of processes in air plasma torches for spraying

  3. CVD of alternated microcrystalline (MCD) and nanocrystalline (NCD) diamond films on WC-TIC-CO substrates

    International Nuclear Information System (INIS)

    Campos, Raonei Alves; Contin, Andre; Trava-Airoldi, Vladimir J.; Corat, Evaldo Jose; Barquete, Danilo Maciel

    2010-01-01

    CVD Diamond coating of WC-TiC-Co cutting tools has been an alternative to increase tool lifetime. Experiments have shown that residual stresses produced during films growth on WC-TiC-Co substrates significantly increases with increasing film thickness up to 20 μm and usually leads to film delamination. In this work alternated micro- and nanocrystalline CVD diamond films have been used to relax interface stresses and to increase diamond coatings performance. WC-TiC-Co substrates have been submitted to a boronizing thermal diffusion treatment prior to CVD diamond films growth. After reactive heat treatment samples were submitted to chemical etching in acid and alkaline solution. The diamond films deposition was performed using HFCVD reactor with different gas concentrations for microcrystalline (MCD) and nano-crystalline (NCD) films growth. As a result, we present the improvement of diamond films adherence on WC-TiC-Co, evaluated by indentation and machining tests. Samples were characterized by Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray (EDX) for qualitative analysis of diamond films. X-ray Diffraction (XRD) was used for phases identification after boronizing process. Diamond film compressive residual stresses were analyzed by Raman Scattering Spectroscopy (RSS). (author)

  4. Status and potential of atmospheric plasma processing of materials

    Energy Technology Data Exchange (ETDEWEB)

    Pappas, Daphne [United States Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005 (United States)

    2011-03-15

    This paper is a review of the current status and potential of atmospheric plasma technology for materials processing. The main focus is the recent developments in the area of dielectric barrier discharges with emphasis in the functionalization of polymers, deposition of organic and inorganic coatings, and plasma processing of biomaterials. A brief overview of both the equipment being used and the physicochemical reactions occurring in the gas phase is also presented. Atmospheric plasma technology offers major industrial, economic, and environmental advantages over other conventional processing methods. At the same time there is also tremendous potential for future research and applications involving both the industrial and academic world.

  5. Status and potential of atmospheric plasma processing of materials

    International Nuclear Information System (INIS)

    Pappas, Daphne

    2011-01-01

    This paper is a review of the current status and potential of atmospheric plasma technology for materials processing. The main focus is the recent developments in the area of dielectric barrier discharges with emphasis in the functionalization of polymers, deposition of organic and inorganic coatings, and plasma processing of biomaterials. A brief overview of both the equipment being used and the physicochemical reactions occurring in the gas phase is also presented. Atmospheric plasma technology offers major industrial, economic, and environmental advantages over other conventional processing methods. At the same time there is also tremendous potential for future research and applications involving both the industrial and academic world.

  6. The plasma hearth process: Process residuals characterization

    International Nuclear Information System (INIS)

    Leatherman, G.L.; Geimer, R.; Batdorf, J.; Hassel, G.; Wolfe, P.; Carney, K.P.

    1994-01-01

    The Plasma Hearth Process (PHP) is a high-temperature waste treatment process being developed by Science Applications International Corporation (SAIC) for the Department of Energy (DOE) that destroys hazardous organics while stabilizing radionuclides and hazardous metals in a vitreous slag waste form. The PHP has potential application for the treatment of a wide range of mixed waste types in both the low-level and transuranic (TRU) mixed waste categories. DOE, through the Office of Technology Development's Mixed Waste Integrated Program (MWIP) is conducting a three phase development project to ready the PHP for implementation in the DOE complex

  7. CVD Diamond, DLC, and c-BN Coatings for Solid Film Lubrication

    Science.gov (United States)

    Miyoshi, Kazuhisa

    1998-01-01

    When the main criteria for judging coating performance were coefficient of friction and wear rate, which had to be less than 0.1 and 10(exp -6) mm(exp 3)/N-m, respectively, carbon- and nitrogen-ion-implanted, fine-grain CVD diamond and DLC ion beam deposited on fine-grain CVD diamond met the requirements regardless of environment (vacuum, nitrogen, and air).

  8. Proteome changes in rat plasma in response to sibutramine.

    Science.gov (United States)

    Choi, Jung-Won; Joo, Jeong In; Kim, Dong Hyun; Wang, Xia; Oh, Tae Seok; Choi, Duk Kwon; Yun, Jong Won

    2011-04-01

    Sibutramine is an anti-obesity agent that induces weight loss by selective inhibition of neuronal reuptake of serotonin and norepinephrine; however, it is associated with the risk of cardiovascular diseases (CVD), including heart attack and stroke. Here, we analyzed global protein expression patterns in plasma of control and sibutramine-treated rats using proteomic analysis for a better understanding of the two conflicting functions of this drug, appetite regulation, and cardiovascular risk. The control (n=6) and sibutramine-treated groups (n=6) were injected by vehicle and sibutramine, respectively, and 2-DE combined with MALDI-TOF/MS were performed. Compared to control rats, sibutramine-administered rats gained approximately 18% less body weight and consumed about 13% less food. Plasma leptin and insulin levels also showed a significant decrease in sibutramine-treated rats. As a result of proteomic analysis, 23 differentially regulated proteins were discovered and were reconfirmed by immunoblot analysis. Changed proteins were classified into appetite regulation and cardiovascular risk, according to their regulation pattern. Because the differential levels of proteins that have been well recognized as predictors of CVD risk were not well matched with the results of our proteomic analysis, this study does not conclusively prove that sibutramine has an effect on CVD risk. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Air plasma processing of poly(methyl methacrylate) micro-beads: Surface characterisations

    International Nuclear Information System (INIS)

    Liu Chaozong; Cui Naiyi; Osbeck, Susan; Liang He

    2012-01-01

    Highlights: ► PMMA micro-beads were processed using a rotary air plasma reactor. ► Surface chemistry and surface texture of PMMA micro-beads were characterised. ► Surface wettability was evaluated using “floating” water contact angle method. ► Surface oxidation and texture changes induced by air plasma attributed to the improvement of surface wettability. - Abstract: This paper reports the surface processing of poly(methyl methacrylate) (PMMA) micro-beads by using a rotary air plasma reactor, and its effects on surface properties. The surface properties, including surface wettability, surface chemistry and textures of the PMMA beads, were characterised. It was observed that the air plasma processing can improve the surface wettability of the PMMA microbeads significantly. A 15 min plasma processing can reduce the surface water contact angle of PMMA beads to about 50° from its original value of 80.3°. This was accompanied by about 8% increase in surface oxygen concentration as confirmed by XPS analysis. The optical profilometry examination revealed the air plasma processing resulted in a rougher surface that has a “delicate” surface texture. It is concluded that the surface chemistry and texture, induced by air plasma processing, co-contributed to the surface wettability improvement of PMMA micro-beads.

  10. Processing of volatile organic compounds by microwave plasmas

    International Nuclear Information System (INIS)

    Mizeraczyk, J.; Jasinski, M.; Dors, M.; Zakrzewski, Z.

    2011-01-01

    In this paper atmospheric pressure microwave discharge methods and devices used for producing the nonthermal plasmas for processing of gases are presented. The main part of the paper concerns the microwave plasma sources (MPSs) for environmental protection applications. A few types of the MPSs, i.e. waveguidebased surface wave sustained MPS, coaxial-line-based and waveguide-based nozzle-type MPSs, waveguidebased nozzleless cylinder-type MPS and MPS for microdischarges are presented. Also, results of the laboratory experiments on the plasma processing of several highly-concentrated (up to several tens percent) volatile organic compounds (VOCs), including Freon-type refrigerants, in the moderate (200-400 W) waveguide-based nozzletype MPS (2.45 GHz) are presented. The results showed that the microwave discharge plasma fully decomposed the VOCs at relatively low energy cost. The energy efficiency of VOCs decomposition reached 1000 g/kWh. This suggests that the microwave discharge plasma can be a useful tool for environmental protection applications. In this paper also results of the use of the waveguide-based nozzleless cylinder-type MPS to methane reforming into hydrogen are presented. (author)

  11. Processing of volatile organic compounds by microwave plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Mizeraczyk, J. [Centre for Plasma and Laser Engineering, Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, Gdansk (Poland); Department of Marine Electronics, Gdynia Martime University, Gdynia (Poland); Jasinski, M.; Dors, M.; Zakrzewski, Z. [Centre for Plasma and Laser Engineering, Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, Gdansk (Poland)

    2011-07-01

    In this paper atmospheric pressure microwave discharge methods and devices used for producing the nonthermal plasmas for processing of gases are presented. The main part of the paper concerns the microwave plasma sources (MPSs) for environmental protection applications. A few types of the MPSs, i.e. waveguidebased surface wave sustained MPS, coaxial-line-based and waveguide-based nozzle-type MPSs, waveguidebased nozzleless cylinder-type MPS and MPS for microdischarges are presented. Also, results of the laboratory experiments on the plasma processing of several highly-concentrated (up to several tens percent) volatile organic compounds (VOCs), including Freon-type refrigerants, in the moderate (200-400 W) waveguide-based nozzletype MPS (2.45 GHz) are presented. The results showed that the microwave discharge plasma fully decomposed the VOCs at relatively low energy cost. The energy efficiency of VOCs decomposition reached 1000 g/kWh. This suggests that the microwave discharge plasma can be a useful tool for environmental protection applications. In this paper also results of the use of the waveguide-based nozzleless cylinder-type MPS to methane reforming into hydrogen are presented. (author)

  12. Atomic Processes in Plasmas: Tenth Topical Conference. Proceedings

    International Nuclear Information System (INIS)

    Osterheld, A.L.; Goldstein, W.H.

    1997-01-01

    These proceedings contain the papers presented at the 10th topical conference on atomic processes in plasmas held in San Francisco, California. This conference series provides a forum for those whose research overlaps atomic and plasma physics. The topics discussed included tokamak plasmas, x-ray sources and x-ray lasers, dense plasmas, laser plasmas, radiative opacity and atomic databases. Among the sponsors of this conference were the Office of Fusion Energy and the Office of Energy Research of the U.S. department of Energy and Lawrence Livermore National Laboratory. There were 30 papers presented and 28 have been abstracted for the Energy Science and Technology database

  13. Universal Design: Supporting Students with Color Vision Deficiency (CVD) in Medical Education

    Science.gov (United States)

    Meeks, Lisa M.; Jain, Neera R.; Herzer, Kurt R.

    2016-01-01

    Color Vision Deficiency (CVD) is a commonly occurring condition in the general population. For medical students, it has the potential to create unique challenges in the classroom and clinical environments. Few studies have provided medical educators with comprehensive recommendations to assist students with CVD. This article presents a focused…

  14. 25th anniversary article: CVD polymers: a new paradigm for surface modification and device fabrication.

    Science.gov (United States)

    Coclite, Anna Maria; Howden, Rachel M; Borrelli, David C; Petruczok, Christy D; Yang, Rong; Yagüe, Jose Luis; Ugur, Asli; Chen, Nan; Lee, Sunghwan; Jo, Won Jun; Liu, Andong; Wang, Xiaoxue; Gleason, Karen K

    2013-10-11

    Well-adhered, conformal, thin (polymers can be achieved on virtually any substrate: organic, inorganic, rigid, flexible, planar, three-dimensional, dense, or porous. In CVD polymerization, the monomer(s) are delivered to the surface through the vapor phase and then undergo simultaneous polymerization and thin film formation. By eliminating the need to dissolve macromolecules, CVD enables insoluble polymers to be coated and prevents solvent damage to the substrate. CVD film growth proceeds from the substrate up, allowing for interfacial engineering, real-time monitoring, and thickness control. Initiated-CVD shows successful results in terms of rationally designed micro- and nanoengineered materials to control molecular interactions at material surfaces. The success of oxidative-CVD is mainly demonstrated for the deposition of organic conducting and semiconducting polymers. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Association of BMI with risk of CVD mortality and all-cause mortality.

    Science.gov (United States)

    Kee, Chee Cheong; Sumarni, Mohd Ghazali; Lim, Kuang Hock; Selvarajah, Sharmini; Haniff, Jamaiyah; Tee, Guat Hiong Helen; Gurpreet, Kaur; Faudzi, Yusoff Ahmad; Amal, Nasir Mustafa

    2017-05-01

    To determine the relationship between BMI and risk of CVD mortality and all-cause mortality among Malaysian adults. Population-based, retrospective cohort study. Participants were followed up for 5 years from 2006 to 2010. Mortality data were obtained via record linkages with the Malaysian National Registration Department. Multiple Cox regression was applied to compare risk of CVD and all-cause mortality between BMI categories adjusting for age, gender and ethnicity. Models were generated for all participants, all participants the first 2 years of follow-up, healthy participants, healthy never smokers, never smokers, current smokers and former smokers. All fourteen states in Malaysia. Malaysian adults (n 32 839) aged 18 years or above from the third National Health and Morbidity Survey. Total follow-up time was 153 814 person-years with 1035 deaths from all causes and 225 deaths from CVD. Underweight (BMIBMI ≥30·0 kg/m2) was associated with a heightened risk of CVD mortality. Overweight (BMI=25·0-29·9 kg/m2) was inversely associated with risk of all-cause mortality. Underweight was significantly associated with all-cause mortality in all models except for current smokers. Overweight was inversely associated with all-cause mortality in all participants. Although a positive trend was observed between BMI and CVD mortality in all participants, a significant association was observed only for severe obesity (BMI≥35·0 kg/m2). Underweight was associated with increased risk of all-cause mortality and obesity with increased risk of CVD mortality. Therefore, maintaining a normal BMI through leading an active lifestyle and healthy dietary habits should continue to be promoted.

  16. A beam radiation monitor based on CVD diamonds for SuperB

    Science.gov (United States)

    Cardarelli, R.; Di Ciaccio, A.

    2013-08-01

    Chemical Vapor Deposition (CVD) diamond particle detectors are in use in the CERN experiments at LHC and at particle accelerator laboratories in Europe, USA and Japan mainly as beam monitors. Nowadays it is considered a proven technology with a very fast signal read-out and a very high radiation tolerance suitable for measurements in high radiation environment zones i.e. near the accelerators beam pipes. The specific properties of CVD diamonds make them a prime candidate for measuring single particles as well as high-intensity particle cascades, for timing measurements on the sub-nanosecond scale and for beam protection systems in hostile environments. A single-crystalline CVD (scCVD) diamond sensor, read out with a new generation of fast and high transition frequency SiGe bipolar transistor amplifiers, has been tested for an application as radiation monitor to safeguard the silicon vertex tracker in the SuperB detector from excessive radiation damage, cumulative dose and instantaneous dose rates. Test results with 5.5 MeV alpha particles from a 241Am radioactive source and from electrons from a 90Sr radioactive source are presented in this paper.

  17. CVD of SiC and AlN using cyclic organometallic precursors

    Science.gov (United States)

    Interrante, L. V.; Larkin, D. J.; Amato, C.

    1992-01-01

    The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

  18. Process maps for plasma spray: Part 1: Plasma-particle interactions

    International Nuclear Information System (INIS)

    Gilmore, Delwyn L.; Neiser, Richard A. Jr.; Wan, Yuepeng; Sampath, Sanjay

    2000-01-01

    This is the first paper of a two part series based on an integrated study carried out at Sandia National Laboratories and the State University of New York at Stony Brook. The aim of the study is to develop a more fundamental understanding of plasma-particle interactions, droplet-substrate interactions, deposit formation dynamics and microstructural development as well as final deposit properties. The purpose is to create models that can be used to link processing to performance. Process maps have been developed for air plasma spray of molybdenum. Experimental work was done to investigate the importance of such spray parameters as gun current, auxiliary gas flow, and powder carrier gas flow. In-flight particle diameters, temperatures, and velocities were measured in various areas of the spray plume. Samples were produced for analysis of microstructures and properties. An empirical model was developed, relating the input parameters to the in-flight particle characteristics. Multi-dimensional numerical simulations of the plasma gas flow field and in-flight particles under different operating conditions were also performed. In addition to the parameters which were experimentally investigated, the effect of particle injection velocity was also considered. The simulation results were found to be in good general agreement with the experimental data

  19. CVD in nuclear energy

    International Nuclear Information System (INIS)

    Nickel, H.

    1981-08-01

    CVD-deposited pyrocarbon, especially the coatings of nuclear fuel kernels show a structure depending on many parameters such as deposition temperature, nature and pressure of the pyrolysis gas, nature of the substrate, geometry of the deposition system, etc. Because of the variety of pyrocarbon different characterization methods have been developed or qualified for this new application. Additionally classical characterization procedures are available. Beside theoretical aspects concerning the formation and deposition mechanism of pyrocarbon from the gas phase the behaviour of such coatings under irradiation with fast neutrons is discussed. (orig.) [de

  20. Advanced methods for processing ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Carter, W.B. [Georgia Institute of Technology, Atlanta, GA (United States)

    1997-04-01

    Combustion chemical vapor deposition (combustion CVD) is being developed for the deposition of high temperature oxide coatings. The process is being evaluated as an alternative to more capital intensive conventional coating processes. The thrusts during this reporting period were the development of the combustion CVD process for depositing lanthanum monazite, the determination of the influence of aerosol size on coating morphology, the incorporation of combustion CVD coatings into thermal barrier coatings (TBCs) and related oxidation research, and continued work on the deposition of zirconia-yttria coatings.

  1. Thermoluminescent properties of CVD diamond: applications to ionising radiation dosimetry; Proprietes thermoluminescentes du diamant CVD: applications a la dosimetrie des rayonnements ionisants

    Energy Technology Data Exchange (ETDEWEB)

    Petitfils, A

    2007-09-15

    Remarkable properties of synthetic diamond (human soft tissue equivalence, chemical stability, non-toxicity) make this material suitable for medical application as thermoluminescent dosimeter (TLD). This work highlights the interest of this material as radiotherapy TLD. In the first stage of this work, we looked after thermoluminescent (TL) and dosimetric properties of polycrystalline diamond made by Chemically Vapor Deposited (CVD) synthesis. Dosimetric characteristics are satisfactory as TLD for medical application. Luminescence thermal quenching on diamond has been investigated. This phenomenon leads to a decrease of dosimetric TL peak sensitivity when the heating rate increases. The second part of this work analyses the use of synthetic diamond as TLD in radiotherapy. Dose profiles, depth dose distributions and the cartography of an electron beam obtained with our samples are in very good agreement with results from an ionisation chamber. It is clearly shown that CVD) diamond is of interest to check beams of treatment accelerators. The use of these samples in a control of treatment with Intensity Modulated Radiation Therapy underlines good response of synthetic diamond in high dose gradient areas. These results indicate that CVD diamond is a promising material for radiotherapy dosimetry. (author)

  2. Effect of surface irradiation during the photo-CVD deposition of a-Si:H thin films. Hikari CVD ho ni yoru amorphous silicon sakuseiji no kiban hikari reiki koka

    Energy Technology Data Exchange (ETDEWEB)

    Tasaka, K.; Doering, H.; Hashimoto, K.; Fujishima, A. (The University of Tokyo, Tokyo (Japan))

    1990-12-06

    This paper shows the impact of the irradiation from an additional light source during the deposition of hydrogenated amorphous silicon by photo-CVD deposition. Using a mercury sensitized photo-CVD process from Disilan (Si {sub 2} H {sub 6}) and hydrogen, silicon was deposited. A 40W low pressure mercury lamp was applied as the light source. A portion of the substrate was in addition irradiated using an Xg-He lamp through a thermal filter. Irradiation of the substrate using only Xg-He lamp produced no deposition, since this light has a wavelength which is too long to produce the SiH {sub 3}-radicals needed for Si deposition. The additional Xg-He light source was discovered to cause an increased thickness of deposited a-Si:H film and a transmission of the band structure. The reasons of these are considered that the influence of irradiation is not limited to film thickness, but that irradiation also impacts the composition of the a-Si:H film so as to cause a reduction in the hydrogen content. 10 figs., 1 tab.

  3. CVD diamond pixel detectors for LHC experiments

    Energy Technology Data Exchange (ETDEWEB)

    Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J.C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N

    1999-08-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described.

  4. CVD diamond pixel detectors for LHC experiments

    International Nuclear Information System (INIS)

    Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J.C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N.

    1999-01-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described

  5. High-efficiency supercapacitor electrodes of CVD-grown graphenes hybridized with multiwalled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Kalam, Amir Abul; Bae, Joon Ho [Dept. of Nano-physics, Gachon University, Seongnam (Korea, Republic of); Park, Soo Bin; Seo, Yong Ho [Nanotechnology and Advanced Material Engineering, HMC, and GRI, Sejong University, Seoul (Korea, Republic of)

    2015-08-15

    We demonstrate, for the first time, high-efficiency supercapacitors by utilizing chemical vapor deposition (CVD)-grown graphenes hybridized with multiwalled carbon nanotubes (CNTs). A single-layer graphene was grown by simple CVD growth method, and transferred to polyethylene terephthalate substrates. The bare graphenes were further hybridized with multiwalled CNTs by drop-coating CNTs on graphenes. The supercapacitors using bare graphenes and graphenes with CNTs revealed that graphenes with CNTs resulted in enhanced supercapacitor performances of 2.2- (the mass-specific capacitance) and 4.4-fold (the area-specific capacitance) of those of bare graphenes. Our strategy to improve electrochemical performance of CVD-grown graphenes is advantageous for large-scale graphene electrodes due to high electrical conductivity of CVD-grown graphenes and cost-effectiveness of using multiwalled CNTs as compared to conventional employment of single-walled CNTs.

  6. High-efficiency supercapacitor electrodes of CVD-grown graphenes hybridized with multiwalled carbon nanotubes

    International Nuclear Information System (INIS)

    Kalam, Amir Abul; Bae, Joon Ho; Park, Soo Bin; Seo, Yong Ho

    2015-01-01

    We demonstrate, for the first time, high-efficiency supercapacitors by utilizing chemical vapor deposition (CVD)-grown graphenes hybridized with multiwalled carbon nanotubes (CNTs). A single-layer graphene was grown by simple CVD growth method, and transferred to polyethylene terephthalate substrates. The bare graphenes were further hybridized with multiwalled CNTs by drop-coating CNTs on graphenes. The supercapacitors using bare graphenes and graphenes with CNTs revealed that graphenes with CNTs resulted in enhanced supercapacitor performances of 2.2- (the mass-specific capacitance) and 4.4-fold (the area-specific capacitance) of those of bare graphenes. Our strategy to improve electrochemical performance of CVD-grown graphenes is advantageous for large-scale graphene electrodes due to high electrical conductivity of CVD-grown graphenes and cost-effectiveness of using multiwalled CNTs as compared to conventional employment of single-walled CNTs

  7. Prevalence of undiagnosed cardiovascular risk factors and 10-year CVD risk in male steel industry workers.

    Science.gov (United States)

    Gray, Benjamin J; Bracken, Richard M; Turner, Daniel; Morgan, Kerry; Mellalieu, Stephen D; Thomas, Michael; Williams, Sally P; Williams, Meurig; Rice, Sam; Stephens, Jeffrey W

    2014-05-01

    To assess the prevalence of undiagnosed cardiovascular disease (CVD) in a cohort of male steelworkers in South Wales, UK. Male steel industry workers (n = 221) with no prior diagnosis of CVD or diabetes accepted a CVD risk assessment within the work environment. Demographic, anthropometric, family, and medical histories were all recorded and capillary blood samples obtained. The 10-year CVD risk was predicted using the QRISK2-2012 algorithm. Up to 81.5% of workers were either overweight or obese. More than 20% of workers were found to have diastolic hypertension, high total cholesterol, and/or a total cholesterol/high-density lipoprotein ratio of six or more. Over one quarter of workers assessed had an increased 10-year CVD risk. Despite a physically demanding occupation, risk assessment in the workplace uncovered significant occult factors in CVD risk in a sample of male heavy industry workers.

  8. COMPARATIVE EVALUATION OF RISK FACTORS FOR CARDIOVASCULAR DISEASE (CVD) IN GENETICALLY PREDISPOSED RATS

    Science.gov (United States)

    Rodent CVD models are increasingly used for understanding individual differences in susceptibility to environmental stressors such as air pollution. We characterized pathologies and a number of known human risk factors of CVD in genetically predisposed, male young adult Spontaneo...

  9. Proceedings of the international seminar on atomic processes in plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Kato, Takako; Murakami, Izumi [eds.

    2000-01-01

    The International Seminar on Atomic Processes in Plasmas (ISAPP), a satellite meeting to the ICPEAC was held July 28-29 at the National Institute for Fusion Science in Toki, Gifu, Japan. About 110 scientists attended the ISAPP meeting and discussed atomic processes and atomic data required for fusion research. This Proceedings book includes the papers of the talks, posters and panel discussion given at the meeting. The invited talks described the super configuration array method for complex spectra, near-LTE atomic kinetics, R-matrix calculations, the binary-encounter dipole model for electron-impact ionization of molecules, other calculations of molecular processes, the ADAS project and the NIFS atomic data-base, and a survey of the role of molecular processes in divertor plasmas. On the experimental side crossed-beam ion-ion collision-experiments for charge transfer, and storage-ring and EBIT measurements of ionization, excitation and dielectronic recombination cross-sections were presented, and atomic processes important for x-ray laser experiments and x-ray spectroscopy of astrophysical plasmas were described. The new method of plasma polarization spectroscopy was outlined. There was also a spectroscopic study of particle transport in JT-60U, new results for detached plasmas, and a sketch of the first hot plasma experiments with the Large Helical Device recently completed at NIFS. The 63 of the presented papers are indexed individually. (J.P.N.)

  10. Spectroscopic diagnostics of plasma during laser processing of aluminium

    International Nuclear Information System (INIS)

    Lober, R; Mazumder, J

    2007-01-01

    The role of the plasma in laser-metal interaction is of considerable interest due to its influence in the energy transfer mechanism in industrial laser materials processing. A 10 kW CO 2 laser was used to study its interaction with aluminium under an argon environment. The objective was to determine the absorption and refraction of the laser beam through the plasma during the processing of aluminium. Laser processing of aluminium is becoming an important topic for many industries, including the automobile industry. The spectroscopic relative line to continuum method was used to determine the electron temperature distribution within the plasma by investigating the 4158 A Ar I line emission and the continuum adjacent to it. The plasmas are induced in 1.0 atm pure Ar environment over a translating Al target, using f/7 and 10 kW CO 2 laser. Spectroscopic data indicated that the plasma composition and behaviour were Ar-dominated. Experimental results indicated the plasma core temperature to be 14 000-15 300 K over the incident range of laser powers investigated from 5 to 7 kW. It was found that 7.5-29% of the incident laser power was absorbed by the plasma. Cross-section analysis of the melt pools from the Al samples revealed the absence of any key-hole formation and confirmed that the energy transfer mechanism in the targets was conduction dominated for the reported range of experimental data

  11. Spectroscopic diagnostics of plasma during laser processing of aluminium

    Science.gov (United States)

    Lober, R.; Mazumder, J.

    2007-10-01

    The role of the plasma in laser-metal interaction is of considerable interest due to its influence in the energy transfer mechanism in industrial laser materials processing. A 10 kW CO2 laser was used to study its interaction with aluminium under an argon environment. The objective was to determine the absorption and refraction of the laser beam through the plasma during the processing of aluminium. Laser processing of aluminium is becoming an important topic for many industries, including the automobile industry. The spectroscopic relative line to continuum method was used to determine the electron temperature distribution within the plasma by investigating the 4158 Å Ar I line emission and the continuum adjacent to it. The plasmas are induced in 1.0 atm pure Ar environment over a translating Al target, using f/7 and 10 kW CO2 laser. Spectroscopic data indicated that the plasma composition and behaviour were Ar-dominated. Experimental results indicated the plasma core temperature to be 14 000-15 300 K over the incident range of laser powers investigated from 5 to 7 kW. It was found that 7.5-29% of the incident laser power was absorbed by the plasma. Cross-section analysis of the melt pools from the Al samples revealed the absence of any key-hole formation and confirmed that the energy transfer mechanism in the targets was conduction dominated for the reported range of experimental data.

  12. CVD diamond pixel detectors for LHC experiments

    CERN Document Server

    Wedenig, R; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Runólfsson, O; Russ, J; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Vittone, E; Wagner, A; Walsh, A M; Weilhammer, Peter; White, C; Zeuner, W; Ziock, H J; Zöller, M

    1999-01-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described. (9 refs).

  13. Plasma clot lysis time and its association with cardiovascular risk factors in black Africans.

    Directory of Open Access Journals (Sweden)

    Zelda de Lange

    Full Text Available Studies in populations of European descent show longer plasma clot lysis times (CLT in patients with cardiovascular disease (CVD than in controls. No data are available on the association between CVD risk factors and fibrinolytic potential in black Africans, a group undergoing rapid urbanisation with increased CVD prevalence. We investigated associations between known CVD risk factors and CLT in black Africans and whether CLTs differ between rural and urban participants in light of differences in CVD risk.Data from 1000 rural and 1000 urban apparently healthy black South Africans (35-60 years were cross-sectionally analysed.Increased PAI-1(act, BMI, HbA1c, triglycerides, the metabolic syndrome, fibrinogen concentration, CRP, female sex and positive HIV status were associated with increased CLTs, while habitual alcohol consumption associated with decreased CLT. No differences in CLT were found between age and smoking categories, contraceptive use or hyper- and normotensive participants. Urban women had longer CLT than rural women while no differences were observed for men.CLT was associated with many known CVD risk factors in black Africans. Differences were however observed, compared to data from populations of European descent available in the literature, suggesting possible ethnic differences. The effect of urbanisation on CLT is influenced by traditional CVD risk factors and their prevalence in urban and rural communities.

  14. Plasma clot lysis time and its association with cardiovascular risk factors in black Africans.

    Science.gov (United States)

    de Lange, Zelda; Pieters, Marlien; Jerling, Johann C; Kruger, Annamarie; Rijken, Dingeman C

    2012-01-01

    Studies in populations of European descent show longer plasma clot lysis times (CLT) in patients with cardiovascular disease (CVD) than in controls. No data are available on the association between CVD risk factors and fibrinolytic potential in black Africans, a group undergoing rapid urbanisation with increased CVD prevalence. We investigated associations between known CVD risk factors and CLT in black Africans and whether CLTs differ between rural and urban participants in light of differences in CVD risk.Data from 1000 rural and 1000 urban apparently healthy black South Africans (35-60 years) were cross-sectionally analysed.Increased PAI-1(act), BMI, HbA1c, triglycerides, the metabolic syndrome, fibrinogen concentration, CRP, female sex and positive HIV status were associated with increased CLTs, while habitual alcohol consumption associated with decreased CLT. No differences in CLT were found between age and smoking categories, contraceptive use or hyper- and normotensive participants. Urban women had longer CLT than rural women while no differences were observed for men.CLT was associated with many known CVD risk factors in black Africans. Differences were however observed, compared to data from populations of European descent available in the literature, suggesting possible ethnic differences. The effect of urbanisation on CLT is influenced by traditional CVD risk factors and their prevalence in urban and rural communities.

  15. PREFACE: 12th High-Tech Plasma Processes Conference (HTPP-12)

    Science.gov (United States)

    Gleizes, Alain; Ghedini, Emanuele; Gherardi, Matteo; Sanibondi, Paolo; Dilecce, Giorgio

    2012-12-01

    The High-Tech Plasma Processes - 12th European Plasma Conference (HTPP-12) was held in Bologna (Italy) on 24-29 June 2012. The conference series started in 1990 as a thermal plasma conference and gradually expanded to include other topic fields as well. Now the High-Tech Plasma Processes - European Plasma Conference (HTPP) is a bi-annual international conference based in Europe with topics encompassing the whole area of plasma processing science. The aim of the conference is to bring different scientific communities together, facilitate the contacts between science, technology and industry and provide a platform for the exploration of both fundamental topics and new applications of plasmas. Thanks to the efforts of the conference chairman, Professor Vittorio Colombo and of the co-chair, Professor Piero Favia, a well balanced participation from both the communities of thermal and nonthermal plasma researchers was achieved; this resulted in just about 196 attendees from 39 countries, with 8 plenary and 15 invited talks, plus 50 oral and 140 poster contributions. This volume of Journal of Physics: Conference Series gathers papers from regular contributions of HTPP-12; each contribution submitted for publication has been peer reviewed and the Editors are very grateful to the referees for their careful support in improving the original manuscripts. In the end, 39 manuscripts were accepted for publication, covering different topics of plasma processing science: from plasma fundamentals and modelling to source design and process diagnostics, from nanomaterial synthesis to surface modification, from waste treatment to plasma applications in a liquid environment. It is an honour to present this volume of Journal of Physics: Conference Series and we deeply thank the authors for their enthusiastic and high-grade contribution. Finally, we would like to thank the conference chairmen, the members of the steering committee, the international scientific committee, the local

  16. Quasi-molecular processes in dense plasmas

    International Nuclear Information System (INIS)

    Younger, S.M.

    1991-01-01

    Quasi-molecular phenomena occur in dense plasmas when the interatomic spacing is comparable to the characteristic wavelength of the electrons. If the electronic states are bound, covalent orbitals arise with different excitation energies, radiative rates, and collisional rates than for isolated ions. For continuum electrons, charge localization near transient clusters of nuclei can influence many scattering and transport processes. We identify several novel consequences of quasi-molecular phenomena in plasmas and give a possible explanation of high energy features associated with helium-like emissions lines observed in recent inertial fusion experiments. 7 refs

  17. Atomic and molecular processes with lithium in peripheral plasmas

    International Nuclear Information System (INIS)

    Murakami, I.; Kato, D.; Hirooka, Y.; Sawada, K.

    2010-01-01

    Atomic and molecular processes for Li chemistry are examined for low temperature plasma such as peripheral plasmas in fusion research laboratory devices. Particle abundances of Li, Li ions, LiH and LiH ion are calculated by solving rate equations in which all reactions of the Li chemistry are considered for low temperature plasma.

  18. Thermodynamic and experimental studies of the CVD of A-15 superconductors. I

    International Nuclear Information System (INIS)

    Madar, R.; Weiss, F.; Fruchart, R.; Bernard, C.

    1978-01-01

    This paper deals with the experimental and thermodynamic study of the chemical vapor deposition (CVD) synthesis of Nb 3 Ga layers on various metallic and insulating substrates using the coreduction of mixed halides by hydrogen. Thermodynamic equilibrium in the seven-component system Nb-Ga-H-Cl-Si-O-Ar has been calculated using the method of minimization of the system Gibbs free energy as a function of the variables directly available in the CVD system. The chosen variables were the chloride ratio, the reduction and dilution parameters and the temperature of the deposition zone. The equilibrium compositions were calculated for the two composition limits of the A-15 phase: NbGasub(0.15) and Nb 3 Ga. They are presented in the form of CVD phase diagrams. A CVD reactor has been set up and more than one hundred measurements have been made in order to check the validity of the equilibrium calculations. The comparisons between equilibrium and experimental results show a good agreement and lead to a better understanding of the chemistry and thermodynamics of the system. (Auth.)

  19. Hybrid processing of Ti-6Al-4V using plasma immersion ion implantation combined with plasma nitriding

    Directory of Open Access Journals (Sweden)

    Silva Maria Margareth da

    2006-01-01

    Full Text Available Based on the fact that the Ti-6Al-4V alloy has good mechanical properties, excellent resistance to corrosion and also excellent biocompatibility, however with low wear resistance, this work aims to test plasma processes or combination of plasma and ion implantation processes to improve these characteristics. Two types of processing were used: two steps PIII (Plasma Immersion Ion Implantation combined with PN (Plasma Nitriding and single step PIII treatment. According to Auger Electron Spectroscopy (AES results, the best solution was obtained by PIII for 150 minutes resulting in ~ 65 nm of nitrogen implanted layer, while the sample treated with PIII (75 minutes and PN (75 minutes reached ~ 35 nm implanted layer. The improvement of surface properties could also be confirmed by the nanoindentation technique, with values of hardness increasing for both processes. AFM (Atomic Force Microscopy characterization showed that the single step PIII process presented greater efficiency than the duplex process (PIII + PN, probably due to the sputtering occurring during the second step (PN removing partially the implanted layer of first step (PIII.

  20. Investigation of CVD graphene topography and surface electrical properties

    International Nuclear Information System (INIS)

    Wang, Rui; Pearce, Ruth; Gallop, John; Patel, Trupti; Pollard, Andrew; Hao, Ling; Zhao, Fang; Jackman, Richard; Klein, Norbert; Zurutuza, Amaia

    2016-01-01

    Combining scanning probe microscopy techniques to characterize samples of graphene, a selfsupporting, single atomic layer hexagonal lattice of carbon atoms, provides far more information than a single technique can. Here we focus on graphene grown by chemical vapour deposition (CVD), grown by passing carbon containing gas over heated copper, which catalyses single atomic layer growth of graphene on its surface. To be useful for applications the graphene must be transferred onto other substrates. Following transfer it is important to characterize the CVD graphene. We combine atomic force microscopy (AFM) and scanning Kelvin probe microscopy (SKPM) to reveal several properties of the transferred film. AFM alone provides topographic information, showing ‘wrinkles’ where the transfer provided incomplete substrate attachment. SKPM measures the surface potential indicating regions with different electronic properties for example graphene layer number. By combining AFM and SKPM local defects and impurities can also be observed. Finally, Raman spectroscopy can confirm the structural properties of the graphene films, such as the number of layers and level of disorder, by observing the peaks present. We report example data on a number of CVD samples from different sources. (paper)

  1. Validation of a model to investigate the effects of modifying cardiovascular disease (CVD) risk factors on the burden of CVD: The rotterdam ischemic heart disease and stroke computer simulation (RISC) model

    NARCIS (Netherlands)

    B.J.H. van Kempen (Bob); B.S. Ferket (Bart); A. Hofman (Albert); E.W. Steyerberg (Ewout); E.B. Colkesen (Ersen); S.M. Boekholdt (Matthijs); N.J. Wareham (Nick); K-T. Khaw (Kay-Tee); M.G.M. Hunink (Myriam)

    2012-01-01

    textabstractBackground: We developed a Monte Carlo Markov model designed to investigate the effects of modifying cardiovascular disease (CVD) risk factors on the burden of CVD. Internal, predictive, and external validity of the model have not yet been established.Methods: The Rotterdam Ischemic

  2. Predictive properties of plasma amino acid profile for cardiovascular disease in patients with type 2 diabetes.

    Directory of Open Access Journals (Sweden)

    Shinji Kume

    Full Text Available Prevention of cardiovascular disease (CVD is an important therapeutic object of diabetes care. This study assessed whether an index based on plasma free amino acid (PFAA profiles could predict the onset of CVD in diabetic patients. The baseline concentrations of 31 PFAAs were measured with high-performance liquid chromatography-electrospray ionization-mass spectrometry in 385 Japanese patients with type 2 diabetes registered in 2001 for our prospective observational follow-up study. During 10 years of follow-up, 63 patients developed cardiovascular composite endpoints (myocardial infarction, angina pectoris, worsening of heart failure and stroke. Using the PFAA profiles and clinical information, an index (CVD-AI consisting of six amino acids to predict the onset of any endpoints was retrospectively constructed. CVD-AI levels were significantly higher in patients who did than did not develop CVD. The area under the receiver-operator characteristic curve of CVD-AI (0.72 [95% confidence interval (CI: 0.64-0.79] showed equal or slightly better discriminatory capacity than urinary albumin excretion rate (0.69 [95% CI: 0.62-0.77] on predicting endpoints. A multivariate Cox proportional hazards regression analysis showed that the high level of CVD-AI was identified as an independent risk factor for CVD (adjusted hazard ratio: 2.86 [95% CI: 1.57-5.19]. This predictive effect of CVD-AI was observed even in patients with normoalbuminuria, as well as those with albuminuria. In conclusion, these results suggest that CVD-AI based on PFAA profiles is useful for identifying diabetic patients at risk for CVD regardless of the degree of albuminuria, or for improving the discriminative capability by combining it with albuminuria.

  3. Predictive Properties of Plasma Amino Acid Profile for Cardiovascular Disease in Patients with Type 2 Diabetes

    Science.gov (United States)

    Kume, Shinji; Araki, Shin-ichi; Ono, Nobukazu; Shinhara, Atsuko; Muramatsu, Takahiko; Araki, Hisazumi; Isshiki, Keiji; Nakamura, Kazuki; Miyano, Hiroshi; Koya, Daisuke; Haneda, Masakazu; Ugi, Satoshi; Kawai, Hiromichi; Kashiwagi, Atsunori; Uzu, Takashi; Maegawa, Hiroshi

    2014-01-01

    Prevention of cardiovascular disease (CVD) is an important therapeutic object of diabetes care. This study assessed whether an index based on plasma free amino acid (PFAA) profiles could predict the onset of CVD in diabetic patients. The baseline concentrations of 31 PFAAs were measured with high-performance liquid chromatography-electrospray ionization-mass spectrometry in 385 Japanese patients with type 2 diabetes registered in 2001 for our prospective observational follow-up study. During 10 years of follow-up, 63 patients developed cardiovascular composite endpoints (myocardial infarction, angina pectoris, worsening of heart failure and stroke). Using the PFAA profiles and clinical information, an index (CVD-AI) consisting of six amino acids to predict the onset of any endpoints was retrospectively constructed. CVD-AI levels were significantly higher in patients who did than did not develop CVD. The area under the receiver-operator characteristic curve of CVD-AI (0.72 [95% confidence interval (CI): 0.64–0.79]) showed equal or slightly better discriminatory capacity than urinary albumin excretion rate (0.69 [95% CI: 0.62–0.77]) on predicting endpoints. A multivariate Cox proportional hazards regression analysis showed that the high level of CVD-AI was identified as an independent risk factor for CVD (adjusted hazard ratio: 2.86 [95% CI: 1.57–5.19]). This predictive effect of CVD-AI was observed even in patients with normoalbuminuria, as well as those with albuminuria. In conclusion, these results suggest that CVD-AI based on PFAA profiles is useful for identifying diabetic patients at risk for CVD regardless of the degree of albuminuria, or for improving the discriminative capability by combining it with albuminuria. PMID:24971671

  4. Selective tungsten deposition in a batch cold wall CVD system

    International Nuclear Information System (INIS)

    Chow, R.; Kang, S.; Harshbarger, W.R.; Susoeff, M.

    1987-01-01

    Selective deposition of tungsten offers many advantages for VLSI technology. The process can be used as a planarization technique for multilevel interconnect technology, it can be used to fill contacts and to provide a barrier layer between Al and Si materials, and the selective W process might be used as a self-aligned technology to provide low resistance layers on source/drain and gate conductors. Recent publications have indicate that cold wall CVD systems provide advantages for development of selective W process. Genus has investigated selective W deposition processing, and we have developed a selective W deposition process for the Genus 8402 multifilm deposition system. This paper describes the Genus 8402 system and the selective W process developed in this reactor. To further develop selective W technology, Genus has signed an agreement with General Electric establishing a joint development program. As a part of this program, the authors characterized the selective W process for encroachment, Si consumption and degrees of selectivity on various dielectrics. The status of this development activity and process characterization is reviewed in this paper

  5. PREFACE: 13th High-Tech Plasma Processes Conference (HTPP-2014)

    Science.gov (United States)

    2014-11-01

    The High-Tech Plasma Processes - 13th European Plasma Conference (HTPP-2014) was held in Toulouse (France) on 22-27 June 2014. The conference series started in 1990 as a thermal plasma conference and has gradually expanded to include other related topics. Now the High-Tech Plasma Processes - European Plasma Conference (HTPP) is an international conference organised in Europe every two years with topics encompassing the whole field of plasma processing science. The aim of the conference is to bring different scientific communities together, to facilitate contacts between science, technology and industry and to provide a platform for the exploration of both the fundamental topics and new applications of plasmas. For this edition of HTPP, as was the case for the last, we have acheived a well balanced participation from the communities of both thermal and non-thermal plasma researchers. 142 people from 17 countries attended the conference with the total number of contributions being 155, consisting of 8 plenary and 8 invited talks plus 51 oral and 88 poster contributions. We have received numerous papers corresponding to the contributions of HTPP-2014 that have been submitted for publication in this volume of Journal of Physics: Conference Series. Each submitted contribution has been peer reviewed (60 referees with at least two reviewing each paper) and the Editors are very grateful to the referees for their careful support in improving the original manuscripts. In total, 52 manuscripts have been accepted for publication covering a range of topics of plasma processing science from plasma fundamentals to process applications through to experiments, diagnostics and modelling. We have grouped the papers into the following 5 topics: - Arc-Materials Interaction and Metallurgy - Plasma Torches and Spraying - Synthesis of Powders and Nanomaterials - Deposition and Surface Treatment - Non-Equilibrium Plasmas We deeply thank the authors for their enthusiastic and high

  6. Physical processes in relativistic plasmas

    International Nuclear Information System (INIS)

    Svensson, R.

    1984-01-01

    The continuum emission in many active galactic nuclei (AGNs) extend to 100 keV and beyond (e.g. Rothschild et al. 1983). In thermal models of the continuum emission this implies temperatures above 10 9 K or kT of order mc 2 . In such a plasma the electrons are at least mildly relativistic and furthermore the particles and the photons are energetic enough to produce electron-positron pairs. The physics of such hot plasmas has only recently been studied in any detail and here we review the results of those studies. Significant electron-positron pair production may also occur in non-thermal models of the continuum emission if the optical depth to photon-photon pair production is greater than unity. We review the few results obtained regarding this interesting but not very well studied possibility. First, however, we briefly discuss the processes taking place in relativistic plasmas and the standard models for the continuum emission from AGNs. We then summarize the effects pair production have on these models and the observational implications of the presence of electron-positron pairs. (orig./WL)

  7. Influence of surface morphology and microstructure on performance of CVD tungsten coating under fusion transient thermal loads

    Energy Technology Data Exchange (ETDEWEB)

    Lian, Youyun, E-mail: lianyy@swip.ac.cn [Southwestern Institute of Physics, Chengdu (China); Liu, Xiang; Wang, Jianbao; Feng, Fan [Southwestern Institute of Physics, Chengdu (China); Lv, Yanwei; Song, Jiupeng [China National R& D Center for Tungsten Technology, Xiamen Tungsten Co. Ltd, 361026 Xiamen (China); Chen, Jiming [Southwestern Institute of Physics, Chengdu (China)

    2016-12-30

    Highlights: • Thick CVD-W coatingswere deposited at a rapid growth rate. • The polished CVD-W coatings have highly textured structure and exhibited a very strong preferred orientation. • The polished CVD tungsten coatings show superior thermal shock resistance as compared with that of the as-deposited coatings. • The crack formation of the polished CVD-W was almost suppressed at an elevated temperature. - Abstract: Thick tungsten coatings have been deposited by chemical vapor deposition (CVD) at a rapid growth rate. A series of tungsten coatings with different thickness and surface morphology were prepared. The surface morphology, microstructure and preferred orientation of the CVD tungsten coatings were investigated. Thermal shock analyses were performed by using an electron beam facility to study the influence of the surface morphology and the microstructure on the thermal shock resistance of the CVD tungsten coatings. Repetitive (100 pulses) ELMs-like thermal shock loads were applied at various temperatures between room temperature and 600 °C with pulse duration of 1 ms and an absorbed power density of up to 1 GW/m{sup 2}. The results of the tests demonstrated that the specific surface morphology and columnar crystal structure of the CVD tungsten have significant influence on the surface cracking threshold and crack propagation of the materials. The CVD tungsten coatings with a polished surface show superior thermal shock resistance as compared with that of the as-deposited coatings with a rough surface.

  8. Movers and stayers: The geography of residential mobility and CVD hospitalisations in Auckland, New Zealand.

    Science.gov (United States)

    Exeter, Daniel J; Sabel, Clive E; Hanham, Grant; Lee, Arier C; Wells, Susan

    2015-05-01

    The association between area-level disadvantage and health and social outcomes is unequivocal. However, less is known about the health impact of residential mobility, particularly at intra-urban scales. We used an encrypted National Health Index (eNHI) number to link individual-level data recorded in routine national health databases to construct a cohort of 641,532 participants aged 30+ years to investigate the association between moving and CVD hospitalisations in Auckland, New Zealand. Residential mobility was measured for participants according to changes in the census Meshblock of usual residence, obtained from the Primary Health Organisation (PHO) database for every calendar quarter between 1/1/2006 and 31/12/2012. The NZDep2006 area deprivation score at the start and end of a participant's inclusion in the study was used to measure deprivation mobility. We investigated the relative risk of movers being hospitalised for CVD relative to stayers using multi-variable binomial regression models, controlling for age, gender, deprivation and ethnicity. Considered together, movers were 1.22 (1.19-1.26) times more likely than stayers to be hospitalised for CVD. Using the 5×5 deprivation origin-destination matrix to model a patient's risk of CVD based on upward, downward or sideways deprivation mobility, movers within the least deprived (NZDep2006 Quintile 1) areas were 10% less likely than stayers to be hospitalised for CVD, while movers within the most deprived (NZDep2006 Q5) areas were 45% more likely than stayers to have had their first CVD hospitalisation in 2006-2012 (RR: 1.45 [1.35-1.55]). Participants who moved upward also had higher relative risks of having a CVD event, although their risk was less than those observed for participants experiencing downward deprivation mobility. This research suggests that residential mobility is an important determinant of CVD in Auckland. Further investigation is required to determine the impact moving has on the risk of

  9. Powder processing and spheroidizing with thermal inductively coupled plasma

    International Nuclear Information System (INIS)

    Nutsch, G.; Linke, P.; Zakharian, S.; Dzur, B.; Weiss, K.-H.

    2001-01-01

    Processing of advanced powder materials for the spraying industry is one of the most promising applications of the thermal RF inductively coupled plasma. By selecting the feedstock carefully and adjusting the RF plasma parameters, unique materials with high quality can be achieved. Powders injected in the hot plasma core emerge with modified shapes, morphology, crystal structure and chemical composition. Ceramic oxide powders such as Al 2 O 3 , ZrO 2 , SiO 2 are spheroidized with a high spheroidization rate. By using the RF induction plasma spheroidizing process tungsten melt carbide powders are obtained with a high spheroidization rate at high feeding rates by densification of agglomerated powders consisting of di-tungsten carbide and monocarbide with a definite composition. This kind of ball-like powders is particularly suited for wear resistant applications. (author)

  10. Validation of a model to investigate the effects of modifying cardiovascular disease (CVD) risk factors on the burden of CVD: the rotterdam ischemic heart disease and stroke computer simulation (RISC) model

    NARCIS (Netherlands)

    van Kempen, Bob J. H.; Ferket, Bart S.; Hofman, Albert; Steyerberg, Ewout W.; Colkesen, Ersen B.; Boekholdt, S. Matthijs; Wareham, Nicholas J.; Khaw, Kay-Tee; Hunink, M. G. Myriam

    2012-01-01

    Background: We developed a Monte Carlo Markov model designed to investigate the effects of modifying cardiovascular disease (CVD) risk factors on the burden of CVD. Internal, predictive, and external validity of the model have not yet been established. Methods: The Rotterdam Ischemic Heart Disease

  11. Diffusion barriers of Al2O3 to reduce the bondcoat-oxidation of MCrAlY alloys

    International Nuclear Information System (INIS)

    Schmitt-Thomas, K.G.; Dietl, U.

    1992-01-01

    Under operating conditions in gas turbines plasma sprayed MCrAlY bondcoats (M = Co and/or Ni) for thermal barrier coatings are exposed to a strong oxidation attack. One possibility to reduce bondcoat oxidation is the application of diffusion barriers. Onto the bondcoat, diffusion barriers of Al 2 O 3 are deposited by CVD, PVD and plasma pulse process. The oxidation behaviour of these coating systems were examined at a temperature of 1273 K for times up to 250 hours. The CVD and PVD Al 2 O 3 - coated specimens show compared to the uncoated specimens smaller oxidation rates. The porous Al 2 O 3 coatings, produced by plasma pulse process are not fit for oxidation protection of the bondcoat. There is hope for further improvement of the oxidation resistance by optimizing the CVD- and PVD-process parameters. (orig.) [de

  12. Performance of irradiated CVD diamond micro-strip sensors

    International Nuclear Information System (INIS)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; Plano, R.; Somalwar, S.V.; Thomson, G.B.

    2002-01-01

    CVD diamond detectors are of interest for charged particle detection and tracking due to their high radiation tolerance. In this article, we present, for the first time, beam test results from recently manufactured CVD diamond strip detectors and their behavior under low doses of electrons from a β-source and the performance before and after intense (>10 15 /cm 2 ) proton- and pion-irradiations. We find that low dose irradiation increase the signal-to-noise ratio (pumping of the signal) and slightly deteriorate the spatial resolution. Intense irradiation with protons 2.2x10 15 p/cm 2 lowers the signal-to-noise ratio slightly. Intense irradiation with pions 2.9x10 15 π/cm 2 lowers the signal-to-noise ratio more. The spatial resolution of the diamond sensors improves after irradiations

  13. Performance of irradiated CVD diamond micro-strip sensors

    Science.gov (United States)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L. S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J. L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; Plano, R.; Somalwar, S. V.; Thomson, G. B.

    2002-01-01

    CVD diamond detectors are of interest for charged particle detection and tracking due to their high radiation tolerance. In this article, we present, for the first time, beam test results from recently manufactured CVD diamond strip detectors and their behavior under low doses of electrons from a β-source and the performance before and after intense (>10 15/cm 2) proton- and pion-irradiations. We find that low dose irradiation increase the signal-to-noise ratio (pumping of the signal) and slightly deteriorate the spatial resolution. Intense irradiation with protons 2.2×10 15 p/ cm2 lowers the signal-to-noise ratio slightly. Intense irradiation with pions 2.9×10 15 π/ cm2 lowers the signal-to-noise ratio more. The spatial resolution of the diamond sensors improves after irradiations.

  14. Metal droplet erosion and shielding plasma layer under plasma flows typical of transient processes in tokamaks

    Energy Technology Data Exchange (ETDEWEB)

    Martynenko, Yu. V., E-mail: Martynenko-YV@nrcki.ru [National Research Nuclear University “MEPhI” (Russian Federation)

    2017-03-15

    It is shown that the shielding plasma layer and metal droplet erosion in tokamaks are closely interrelated, because shielding plasma forms from the evaporated metal droplets, while droplet erosion is caused by the shielding plasma flow over the melted metal surface. Analysis of experimental data and theoretical models of these processes is presented.

  15. Analysis of benzoquinone decomposition in solution plasma process

    International Nuclear Information System (INIS)

    Bratescu, M.A.; Saito, N.

    2016-01-01

    The decomposition of p-benzoquinone (p-BQ) in Solution Plasma Processing (SPP) was analyzed by Coherent Anti-Stokes Raman Spectroscopy (CARS) by monitoring the change of the anti-Stokes signal intensity of the vibrational transitions of the molecule, during and after SPP. Just in the beginning of the SPP treatment, the CARS signal intensities of the ring vibrational molecular transitions increased under the influence of the electric field of plasma. The results show that plasma influences the p-BQ molecules in two ways: (i) plasma produces a polarization and an orientation of the molecules in the local electric field of plasma and (ii) the gas phase plasma supplies, in the liquid phase, hydrogen and hydroxyl radicals, which reduce or oxidize the molecules, respectively, generating different carboxylic acids. The decomposition of p-BQ after SPP was confirmed by UV-visible absorption spectroscopy and liquid chromatography

  16. Analysis of benzoquinone decomposition in solution plasma process

    Science.gov (United States)

    Bratescu, M. A.; Saito, N.

    2016-01-01

    The decomposition of p-benzoquinone (p-BQ) in Solution Plasma Processing (SPP) was analyzed by Coherent Anti-Stokes Raman Spectroscopy (CARS) by monitoring the change of the anti-Stokes signal intensity of the vibrational transitions of the molecule, during and after SPP. Just in the beginning of the SPP treatment, the CARS signal intensities of the ring vibrational molecular transitions increased under the influence of the electric field of plasma. The results show that plasma influences the p-BQ molecules in two ways: (i) plasma produces a polarization and an orientation of the molecules in the local electric field of plasma and (ii) the gas phase plasma supplies, in the liquid phase, hydrogen and hydroxyl radicals, which reduce or oxidize the molecules, respectively, generating different carboxylic acids. The decomposition of p-BQ after SPP was confirmed by UV-visible absorption spectroscopy and liquid chromatography.

  17. Statistical dynamics of transient processes in a gas discharge plasma

    International Nuclear Information System (INIS)

    Smirnov, G.I.; Telegin, G.G.

    1991-01-01

    The properties of a gas discharge plasma to a great extent depend on random processes whose study has recently become particularly important. The present work is concerned with analyzing the statistical phenomena that occur during the prebreakdown stage in a gas discharge. Unlike other studies of breakdown in the discharge gap, in which secondary electron effects and photon processes at the electrodes must be considered, here the authors treat the case of an electrodeless rf discharge or a laser photoresonant plasma. The analysis is based on the balance between the rates of electron generation and recombination in the plasma. The fluctuation kinetics for ionization of atoms in the hot plasma may also play an important role when the electron temperature changes abruptly, as occurs during adiabatic pinching of the plasma or during electron cyclotron heating

  18. Apparatus and method for plasma processing of SRF cavities

    Science.gov (United States)

    Upadhyay, J.; Im, Do; Peshl, J.; Bašović, M.; Popović, S.; Valente-Feliciano, A.-M.; Phillips, L.; Vušković, L.

    2016-05-01

    An apparatus and a method are described for plasma etching of the inner surface of superconducting radio frequency (SRF) cavities. Accelerator SRF cavities are formed into a variable-diameter cylindrical structure made of bulk niobium, for resonant generation of the particle accelerating field. The etch rate non-uniformity due to depletion of the radicals has been overcome by the simultaneous movement of the gas flow inlet and the inner electrode. An effective shape of the inner electrode to reduce the plasma asymmetry for the coaxial cylindrical rf plasma reactor is determined and implemented in the cavity processing method. The processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise way to establish segmented plasma columns. The test structure was a pillbox cavity made of steel of similar dimension to the standard SRF cavity. This was adopted to experimentally verify the plasma surface reaction on cylindrical structures with variable diameter using the segmented plasma generation approach. The pill box cavity is filled with niobium ring- and disk-type samples and the etch rate of these samples was measured.

  19. A CVD Diamond Detector for (n,a) Cross-Section Measurements

    CERN Document Server

    Weiss, Christina; Griesmayer, Erich; Guerrero, Carlos

    A novel detector based on the chemical vapor deposition (CVD) diamond technology has been developed in the framework of this PhD, for the experimental determination of (n,a) cross-sections at the neutron time-of-flight facility n_TOF at CERN. The 59Ni(n,a)56Fe cross-section, which is relevant for astrophysical questions as well as for risk-assessment studies in nuclear technology, has been measured in order to validate the applicability of the detector for such experiments. The thesis is divided in four parts. In the introductory part the motivation for measuring (n,a) cross-sections, the experimental challenges for such measurements and the reasons for choosing the CVD diamond technology for the detector are given. This is followed by the presentation of the n_TOF facility, an introduction to neutron-induced nuclear reactions and a brief summary of the interaction of particles with matter. The CVD diamond technology and the relevant matters related to electronics are given as well in this first part of the t...

  20. Nonthermal Radiation Processes in Interplanetary Plasmas

    Science.gov (United States)

    Chian, A. C. L.

    1990-11-01

    RESUMEN. En la interacci6n de haces de electrones energeticos con plasmas interplanetarios, se excitan ondas intensas de Langmuir debido a inestabilidad del haz de plasma. Las ondas Langmuir a su vez interaccio nan con fluctuaciones de densidad de baja frecuencia para producir radiaciones. Si la longitud de las ondas de Langmujr exceden las condicio nes del umbral, se puede efectuar la conversi5n de modo no lineal a on- das electromagneticas a traves de inestabilidades parametricas. As se puede excitar en un plasma inestabilidades parametricas electromagneticas impulsadas por ondas intensas de Langmuir: (1) inestabilidades de decaimiento/fusi5n electromagnetica impulsadas por una bomba de Lang- muir que viaja; (2) inestabilidades dobles electromagneticas de decai- miento/fusi5n impulsadas por dos bombas de Langrnuir directamente opues- tas; y (3) inestabilidades de dos corrientes oscilatorias electromagne- ticas impulsadas por dos bombas de Langmuir de corrientes contrarias. Se concluye que las inestabilidades parametricas electromagneticas in- ducidas por las ondas de Langmuir son las fuentes posibles de radiacio- nes no termicas en plasmas interplanetarios. ABSTRACT: Nonthermal radio emissions near the local electron plasma frequency have been detected in various regions of interplanetary plasmas: solar wind, upstream of planetary bow shock, and heliopause. Energetic electron beams accelerated by solar flares, planetary bow shocks, and the terminal shock of heliosphere provide the energy source for these radio emissions. Thus, it is expected that similar nonthermal radiation processes may be responsible for the generation of these radio emissions. As energetic electron beams interact with interplanetary plasmas, intense Langmuir waves are excited due to a beam-plasma instability. The Langmuir waves then interact with low-frequency density fluctuations to produce radiations near the local electron plasma frequency. If Langmuir waves are of sufficiently large

  1. Coffee consumption is not associated with prevalent subclinical cardiovascular disease (CVD) or the risk of CVD events, in nonalcoholic fatty liver disease: results from the multi-ethnic study of atherosclerosis.

    Science.gov (United States)

    Simon, Tracey G; Trejo, Maria Esther Perez; Zeb, Irfan; Frazier-Wood, Alexis C; McClelland, Robyn L; Chung, Raymond T; Budoff, Matthew J

    2017-10-01

    Atherosclerosis and its clinical sequelae represent the leading cause of mortality among patients with nonalcoholic fatty liver disease (NAFLD). While epidemiologic data support the hepatoprotective benefits of coffee in NAFLD, whether coffee improves NAFLD-associated CVD risk is unknown. We examined 3710 ethnically-diverse participants from the Multi-Ethnic Study of Atherosclerosis (MESA) cohort, without history of known liver disease, and with available coffee data from a validated 120-item food frequency questionnaire. All participants underwent baseline non-contrast cardiac CT from which NAFLD was defined by liver:spleen ratio (L:S0. Major CVD events were defined by the first occurrence of myocardial infarction, cardiac arrest, angina, stroke, or CVD death. We used log-binomial regression to calculate the adjusted prevalence ratio (PR) for CAC>0 by coffee intake and NAFLD status, and events were compared between groups using frequency of events within adjusted Cox proportional hazard regression models. Seventeen percent (N=637) of participants met criteria for NAFLD. NAFLD participants were more likely to have elevated BMI (mean 31.1±5.5kg/m 2 vs. 28.0±5.2kg/m 2 , pcoffee consumption (p=0.97). Among NAFLD participants, coffee consumption was not associated with prevalent, baseline CAC>0 (PR=1.02 [0.98-1.07]). Over 12.8years of follow-up, 93 NAFLD and 415 non-NAFLD participants experienced a CV event. However, coffee intake was not associated with incident CVD events, in either NAFLD (HR=1.05 [0.91-1.21]) or non-NAFLD participants (HR=1.03 [0.97-1.11]). In a large, population-based cohort, coffee consumption was not associated with the prevalence of subclinical CVD, nor did coffee impact the future risk of major CVD events, regardless of underlying NAFLD status. Copyright © 2017 Elsevier Inc. All rights reserved.

  2. Process for titanium powders spheroidization by RF induction plasma

    International Nuclear Information System (INIS)

    Gu Zhongtao; Ye Gaoying; Liu Chuandong; Tong Honghui

    2010-01-01

    Spherical titanium (Ti) particles were obtained by the process of heating irregularly shaped Ti powders under the radio frequency induction plasma (RF induction plasma) condition. The effect of feed rate, various dispersion methods and Ti particle size on the spheroidization efficiency was studied. The efficiency of the spheroidization is evaluated through the measurements of the percentage of powder spheroidized based on the electron microscopic observations and the tap density measurement of the processed powder. During the short flight of the particles in the plasma flow, of the order of a few milliseconds, the individual titanium particles of the powder are heated and melt, forming a spherical liquid droplet which upon freezing gives rise to the formation of a perfectly dense spherical solid particle. So RF induction plasma is a promising method for the preparation of spherical titanium powders with high flow ability. (authors)

  3. Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite

    International Nuclear Information System (INIS)

    Liu Yongsheng; Cheng Laifei; Zhang Litong; Wu Shoujun; Li Duo; Xu Yongdong

    2007-01-01

    A CVD boron coating was introduced between two CVD SiC coating layers. EDS and XRD results showed that the CVD B coating was a boron crystal without other impurity elements. SEM results indicated that the CVD B coating was a flake-like or column-like crystal with a compact cross-section. The crack width in the CVD SiC coating deposited on CVD B is smaller than that in a CVD SiC coating deposited on CVD SiC coating. After oxidation at 700 deg. C and 1000 deg. C, XRD results indicated that the coating was covered by product B 2 O 3 or B 2 O 3 .xSiO 2 film. The cracks were sealed as observed by SEM. There was a large amount of flake-like material on hybrid coating surface after oxidation at 1300 deg. C. Oxidation weight loss and residual flexural strength results showed that hybrid SiC/B/SiC multilayer coating provided better oxidation protection for C/SiC composite than a three layer CVD SiC coating at temperatures from 700 deg. C to 1000 deg. C for 600 min, but worse oxidation protection above 1000 deg. C due to the large amount of volatilization of B 2 O 3 or B 2 O 3 .xSiO 2

  4. Signal processing methods for MFE plasma diagnostics

    International Nuclear Information System (INIS)

    Candy, J.V.; Casper, T.; Kane, R.

    1985-02-01

    The application of various signal processing methods to extract energy storage information from plasma diamagnetism sensors occurring during physics experiments on the Tandom Mirror Experiment-Upgrade (TMX-U) is discussed. We show how these processing techniques can be used to decrease the uncertainty in the corresponding sensor measurements. The algorithms suggested are implemented using SIG, an interactive signal processing package developed at LLNL

  5. Prediction of the properties of PVD/CVD coatings with the use of FEM analysis

    International Nuclear Information System (INIS)

    Śliwa, Agata; Mikuła, Jarosław; Gołombek, Klaudiusz; Tański, Tomasz; Kwaśny, Waldemar; Bonek, Mirosław; Brytan, Zbigniew

    2016-01-01

    Highlights: • Prediction of the properties of PVD/CVD coatings with the use of (FEM) analysis. • Stress distribution in multilayer Ti/Ti(C,N)/CrN, Ti/Ti(C,N)/(Ti,Al)N coatings. • The experimental values of stresses were determined on X-ray diffraction patterns. • An FEM model was established for the purpose of building a computer simulation. - Abstract: The aim of this paper is to present the results of the prediction of the properties of PVD/CVD coatings with the use of finite element method (FEM) analysis. The possibility of employing the FEM in the evaluation of stress distribution in multilayer Ti/Ti(C,N)/CrN, Ti/Ti(C,N)/(Ti,Al)N, Ti/(Ti,Si)N/(Ti,Si)N, and Ti/DLC/DLC coatings by taking into account their deposition conditions on magnesium alloys has been discussed in the paper. The difference in internal stresses in the zone between the coating and the substrate is caused by, first of all, the difference between the mechanical and thermal properties of the substrate and the coating, and also by the structural changes that occur in these materials during the fabrication process, especially during the cooling process following PVD and CVD treatment. The experimental values of stresses were determined based on X-ray diffraction patterns that correspond to the modelled values, which in turn can be used to confirm the correctness of the accepted mathematical model for testing the problem. An FEM model was established for the purpose of building a computer simulation of the internal stresses in the coatings. The accuracy of the FEM model was verified by comparing the results of the computer simulation of the stresses with experimental results. A computer simulation of the stresses was carried out in the ANSYS environment using the FEM method. Structure observations, chemical composition measurements, and mechanical property characterisations of the investigated materials has been carried out to give a background for the discussion of the results that were

  6. Prediction of the properties of PVD/CVD coatings with the use of FEM analysis

    Energy Technology Data Exchange (ETDEWEB)

    Śliwa, Agata; Mikuła, Jarosław; Gołombek, Klaudiusz; Tański, Tomasz; Kwaśny, Waldemar; Bonek, Mirosław, E-mail: miroslaw.bonek@polsl.pl; Brytan, Zbigniew

    2016-12-01

    Highlights: • Prediction of the properties of PVD/CVD coatings with the use of (FEM) analysis. • Stress distribution in multilayer Ti/Ti(C,N)/CrN, Ti/Ti(C,N)/(Ti,Al)N coatings. • The experimental values of stresses were determined on X-ray diffraction patterns. • An FEM model was established for the purpose of building a computer simulation. - Abstract: The aim of this paper is to present the results of the prediction of the properties of PVD/CVD coatings with the use of finite element method (FEM) analysis. The possibility of employing the FEM in the evaluation of stress distribution in multilayer Ti/Ti(C,N)/CrN, Ti/Ti(C,N)/(Ti,Al)N, Ti/(Ti,Si)N/(Ti,Si)N, and Ti/DLC/DLC coatings by taking into account their deposition conditions on magnesium alloys has been discussed in the paper. The difference in internal stresses in the zone between the coating and the substrate is caused by, first of all, the difference between the mechanical and thermal properties of the substrate and the coating, and also by the structural changes that occur in these materials during the fabrication process, especially during the cooling process following PVD and CVD treatment. The experimental values of stresses were determined based on X-ray diffraction patterns that correspond to the modelled values, which in turn can be used to confirm the correctness of the accepted mathematical model for testing the problem. An FEM model was established for the purpose of building a computer simulation of the internal stresses in the coatings. The accuracy of the FEM model was verified by comparing the results of the computer simulation of the stresses with experimental results. A computer simulation of the stresses was carried out in the ANSYS environment using the FEM method. Structure observations, chemical composition measurements, and mechanical property characterisations of the investigated materials has been carried out to give a background for the discussion of the results that were

  7. Higher plasma soluble Receptor for Advanced Glycation End Products (sRAGE) levels are associated with incident cardiovascular disease and all-cause mortality in type 1 diabetes

    DEFF Research Database (Denmark)

    Nin, Johanna W M; Jorsal, Anders; Ferreira, Isabel

    2010-01-01

    To investigate the associations of plasma levels of soluble receptor for advanced glycation end products (sRAGE) with incident cardiovascular disease (CVD) and all-cause mortality in type 1 diabetes and the extent to which any such associations could be explained by endothelial and renal dysfunct......To investigate the associations of plasma levels of soluble receptor for advanced glycation end products (sRAGE) with incident cardiovascular disease (CVD) and all-cause mortality in type 1 diabetes and the extent to which any such associations could be explained by endothelial and renal...

  8. A study of the potential of plasma processing in the chemical industry

    International Nuclear Information System (INIS)

    Estey, P.N.; Connolly, T.J.

    1984-01-01

    This work describes a systematic approach to determine the potential for plasma processing in the United States chemical industry. A model was developed that describes the physical inputs and outputs from a plasma based processing system. Based on these mass flows and the energy flows to the processor an economic assessment of the plasma processing system is made. This economic assessment which also includes the capital costs of the processor, can be used to determine if the plasma system is competitive with the conventional system

  9. Magnetic filter apparatus and method for generating cold plasma in semicoductor processing

    Science.gov (United States)

    Vella, Michael C.

    1996-01-01

    Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a "cold plasma" which is diffused in the region of the process surface while the ion implantation process takes place.

  10. Magnetic filter apparatus and method for generating cold plasma in semiconductor processing

    Science.gov (United States)

    Vella, M.C.

    1996-08-13

    Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a ``cold plasma`` which is diffused in the region of the process surface while the ion implantation process takes place. 15 figs.

  11. Atmospheric Pressure Plasma Processing for Polymer Adhesion: A Review

    DEFF Research Database (Denmark)

    Kusano, Yukihiro

    2014-01-01

    Atmospheric pressure plasma processing has attracted significant interests over decades due to its usefulness and a variety of applications. Adhesion improvement of polymer surfaces is among the most important applications of atmospheric pressure plasma treatment. Reflecting recent significant de...

  12. Assessment of CVD diamond as a thermoluminescence dosemeter material

    International Nuclear Information System (INIS)

    Borchi, E.; Furetta, C.; Leroy, C.

    1996-01-01

    Diamond has a low atomic number (Z = 6) and is therefore essentially soft tissue (Z = 7.4) equivalent. As such, diamond is an attractive material for applications in dosimetry in which the radiation absorption in the sensor material should be as close as possible to that of soft tissue. Synthetic diamond prepared by chemical vapour deposition (CVD) offers an attractive option for this application. The aim of the present work is to report results on the thermoluminescence (TL) properties of CVD diamond samples. The annealing procedures, the linearity of the TL response as a function of dose, a short-term fading experiment and some kinetic properties have been investigated and are reported here. (Author)

  13. Collisional and radiative processes in high-pressure discharge plasmas

    Science.gov (United States)

    Becker, Kurt H.; Kurunczi, Peter F.; Schoenbach, Karl H.

    2002-05-01

    Discharge plasmas at high pressures (up to and exceeding atmospheric pressure), where single collision conditions no longer prevail, provide a fertile environment for the experimental study of collisions and radiative processes dominated by (i) step-wise processes, i.e., the excitation of an already excited atomic/molecular state and by (ii) three-body collisions leading, for instance, to the formation of excimers. The dominance of collisional and radiative processes beyond binary collisions involving ground-state atoms and molecules in such environments allows for many interesting applications of high-pressure plasmas such as high power lasers, opening switches, novel plasma processing applications and sputtering, absorbers and reflectors for electromagnetic waves, remediation of pollutants and waste streams, and excimer lamps and other noncoherent vacuum-ultraviolet light sources. Here recent progress is summarized in the use of hollow cathode discharge devices with hole dimensions in the range 0.1-0.5 mm for the generation of vacuum-ultraviolet light.

  14. Plasma and ion beam processing at Los Alamos

    International Nuclear Information System (INIS)

    Rej, D.J.; Davis, H.A.; Henins, I.

    1994-01-01

    Efforts are underway at Los Alamos National Laboratory to utilize plasma and intense ion beam science and technology of the processing of advanced materials. A major theme involves surface modification of materials, e.g., etching, deposition, alloying, and implantation. In this paper, we concentrate on two programs, plasma source ion implantation and high-intensity pulsed ion beam deposition

  15. Simple method for the calculation and use of CVD phase diagrams with applications to the Ti-B-Cl-H system, 1200 to 8000K

    International Nuclear Information System (INIS)

    Randich, E.; Gerlach, T.M.

    1980-03-01

    A simple method for calculating multi-component gas-solid equilibrium phase diagrams for chemical vapor deposition (CVD) systems is presented. The method proceeds in three steps: dtermination of stable solid assemblages, evaluation of gas-solid stability relations, and calcuation of conventional phase diagrams using a new free energy minimization technique. The phase diagrams can be used to determine (1) bulk compositions and phase fields accessible by CVD techniques; (2) expected condensed phases for various starting gas mixtures; and (3) maximum equilibrium yields for specific CVD process variables. The three step thermodynamic method is used to calcuate phase diagrams for the example CVD system Ti-B-Cl-H at 1200 and 800 0 K. Examples of applications of the diagrams for yield optimization and experimental accessibility studies are presented and discussed. Experimental verification of the TiB 2 + Gas/Gas phase field boundary at 1200 0 K, H/Cl = 1 confirms the calculated boundary and indicates that equilibrium is nearly and rapidly approached under laboratory conditions

  16. Performance of irradiated CVD diamond micro-strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D. E-mail: dirk.meier@cern.ch; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; Plano, R.; Somalwar, S.V.; Thomson, G.B

    2002-01-11

    CVD diamond detectors are of interest for charged particle detection and tracking due to their high radiation tolerance. In this article, we present, for the first time, beam test results from recently manufactured CVD diamond strip detectors and their behavior under low doses of electrons from a {beta}-source and the performance before and after intense (>10{sup 15}/cm{sup 2}) proton- and pion-irradiations. We find that low dose irradiation increase the signal-to-noise ratio (pumping of the signal) and slightly deteriorate the spatial resolution. Intense irradiation with protons 2.2x10{sup 15} p/cm{sup 2} lowers the signal-to-noise ratio slightly. Intense irradiation with pions 2.9x10{sup 15} {pi}/cm{sup 2} lowers the signal-to-noise ratio more. The spatial resolution of the diamond sensors improves after irradiations.

  17. Performance of irradiated CVD diamond micro-strip sensors

    CERN Document Server

    Adam, W; Bergonzo, P; Bertuccio, G; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Koeth, T W; Krammer, Manfred; Lo Giudice, A; Lü, R; MacLynne, L; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Noomen, J; Oh, A; Pan, L S; Pernicka, Manfred; Peitz, A; Perera, L P; Pirollo, S; Procario, M; Riester, J L; Roe, S; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S R; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trischuk, W; Tromson, D; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Wetstein, M; White, C; Zeuner, W; Zöller, M

    2002-01-01

    CVD diamond detectors are of interest for charged particle detection and tracking due to their high radiation tolerance. In this article we present, for the first time, beam test results from recently manufactured CVD diamond strip detectors and their behavior under low doses of electrons from a $\\beta$-source and the performance before and after intense ($>10^{15}/{\\rm cm^2}$) proton- and pion-irradiations. We find that low dose irradiations increase the signal-to-noise ratio (pumping of the signal) and slightly deteriorate the spatial resolution. Intense irradiations with protons ($2.2\\times 10^{15}~p/{\\rm cm^2}$) lowers the signal-to-noise ratio slightly. Intense irradiation with pions ($2.9\\times 10^{15}~\\pi/{\\rm cm^2}$) lowers the signal-to-noise ratio more. The spatial resolution of the diamond sensors improves after irradiations.

  18. Solution processed organic light-emitting diodes using the plasma cross-linking technology

    Energy Technology Data Exchange (ETDEWEB)

    He, Kongduo [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Liu, Yang [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China); Gong, Junyi; Zeng, Pan; Kong, Xun; Yang, Xilu; Yang, Cheng; Yu, Yan [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Liang, Rongqing [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China); Ou, Qiongrong, E-mail: qrou@fudan.edu.cn [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China)

    2016-09-30

    Highlights: • Mixed acetylene and Ar plasma treatment makes the organic film surface cross-linked. • The plasma treatment for 30 s does not affect the performance of OLEDs. • Cross-linking surface can resist rinsing and corrosion of organic solvent. • The surface morphology is nearly unchanged after plasma treatment. • The plasma cross-linking method can realize solution processed multilayer OLEDs. - Abstract: Solution processed multilayer organic light-emitting diodes (OLEDs) present challenges, especially regarding dissolution of the first layer during deposition of a second layer. In this work, we first demonstrated a plasma cross-linking technology to produce a solution processed OLED. The surfaces of organic films can be cross-linked after mixed acetylene and Ar plasma treatment for several tens of seconds and resist corrosion of organic solvent. The film thickness and surface morphology of emissive layers (EMLs) with plasma treatment and subsequently spin-rinsed with chlorobenzene are nearly unchanged. The solution processed triple-layer OLED is successfully fabricated and the current efficiency increases 50% than that of the double-layer OLED. Fluorescent characteristics of EMLs are also observed to investigate factors influencing the efficiency of the triple-layer OLED. Plasma cross-linking technology may open up a new pathway towards fabrication of all-solution processed multilayer OLEDs and other soft electronic devices.

  19. Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

    Directory of Open Access Journals (Sweden)

    Evgeny E. Ashkinazi

    2017-06-01

    Full Text Available Epitaxial growth of diamond films on different facets of synthetic IIa-type single crystal (SC high-pressure high temperature (HPHT diamond substrate by a microwave plasma CVD in CH4-H2-N2 gas mixture with the high concentration (4% of nitrogen is studied. A beveled SC diamond embraced with low-index {100}, {110}, {111}, {211}, and {311} faces was used as the substrate. Only the {100} face is found to sustain homoepitaxial growth at the present experimental parameters, while nanocrystalline diamond (NCD films are produced on other planes. This observation is important for the choice of appropriate growth parameters, in particular, for the production of bi-layer or multilayer NCD-on-microcrystalline diamond (MCD superhard coatings on tools when the deposition of continuous conformal NCD film on all facet is required. The development of the film morphology with growth time is examined with SEM. The structure of hillocks, with or without polycrystalline aggregates, that appear on {100} face is analyzed, and the stress field (up to 0.4 GPa within the hillocks is evaluated based on high-resolution mapping of photoluminescence spectra of nitrogen-vacancy NV optical centers in the film.

  20. Modeling and simulation of plasma materials processing devices

    International Nuclear Information System (INIS)

    Graves, D.B.

    1996-01-01

    Plasma processing has emerged as a central technology in the manufacture of integrated circuits (ICs) and related industries. These plasmas are weakly to partially ionized gases, typically operated at a few to several hundred mTorr gas pressure, with neutral temperatures ranging from room temperature to 500 degrees K. Electron mean energies are typically a few eV and ion energies in the bulk plasma are about 0.05-0.5 eV. Positive ions axe accelerated in the sheaths to impact surfaces with energies ranging from about 10 eV to hundreds of eV. These energetic ions profoundly affect rates of surface chemical reactions. One of the consequences of the recent rapid growth in the IC industry has been a greater focus on manufacturing productivity. The capital costs of equipment that is used in manufacturing IC's has become a large fraction of the ∼ $1 billion cost of building a wafer fab. There is now a strong economic incentive to develop workstation-based simulations of plasma chemical reactors in order to design, optimize and control plasma reactors. I will summarize efforts to develop such models, including electromagnetic coupling, and transport and kinetics of charged and neutral species. Length and time scale disparities in the plasma tool challenge current simulation approaches, and I will address strategies to attack aspects of this problem. In addition, I will present some of our recent efforts to exploit molecular dynamics simulations employing empirical potentials to get hints about qualitative mechanisms and ideas on how to formulate rate expressions for plasma-surface chemical processes. Video illustrations of selected sets of ion trajectories impacting near-surface regions of the substrate will be presented

  1. The inverse association of incident cardiovascular disease with plasma bilirubin is unaffected by adiponectin

    NARCIS (Netherlands)

    Dullaart, Robin P. F.; Boersema, Jeltje; Lefrandt, Joop D.; Wolffenbuttel, Bruce H. R.; Bakker, Stephan J. L.

    Objective: Bilirubin may protect against atherosclerotic cardiovascular disease (CVD). The heme oxygenase pathway is crucial for bilirubin generation, and is stimulated by adiponectin. We tested the relationship of plasma bilirubin with adiponectin, and determined whether the association of incident

  2. Use of Amino‐Functionalized CNTs and CVD Grown CNTs for Better Dispersion in Al Powder in the Fabrication of Composites

    Energy Technology Data Exchange (ETDEWEB)

    Singhal, S. K.; Mathur, R. B. [National Physical Laboratory (CSIR), New Delhi‐1100 12 (India); Mamta,; Teotia, Satish [Guru Jambheshwar University of Science and Technology, Hisar (India); Chahal, Rajiv [Nanoscience and Nanotechnology, Panjab University, Chandigarh (India)

    2011-12-12

    We report an improved process for the better dispersion of multiwalled carbon nanotubes (MWCNTs) in Al powder used for the fabrication of Al‐matrix composites employing powder metallurgy process. For obtaining a better dispersion of MWCNTs in Al, we used two types of MWCNTs. In the first type, the MWCNTs were firstly functionalized by using ammonium bi‐carbonate and mix with Al powder using a high energy ball mill in the presence of a process control agent. In the second type we grew MWCNTs directly on Al powder using CVD. Various mechanical properties of the composites including micro hardness, compressive strength etc. were determined. It has been observed that using functionalized MWCNTs (fCNTs) and CVD grown MWCNTs, these properties were found to enhance significantly. The dispersion of functionalized CNTs was studied by SEM and the interfacial bonding between functionalized CNTs and Al matrix using high resolution transmission electron microscopy (HRTEM).

  3. Plasma assisted surface coating/modification processes: An emerging technology

    Science.gov (United States)

    Spalvins, T.

    1986-01-01

    A broad understanding of the numerous ion or plasma assisted surface coating/modification processes is sought. An awareness of the principles of these processes is needed before discussing in detail the ion nitriding technology. On the basis of surface modifications arising from ion or plasma energizing and interactions, it can be broadly classified as deposition of distinct overlay coatings (sputtering-dc, radio frequency, magnetron, reactive; ion plating-diode, triode) and surface property modification without forming a discrete coating (ion implantation, ion beam mixing, laser beam irradiation, ion nitriding, ion carburizing, plasma oxidation). These techniques offer a great flexibility and are capable in tailoring desirable chemical and structural surface properties independent of the bulk properties.

  4. Plasma assisted surface coating/modification processes - An emerging technology

    Science.gov (United States)

    Spalvins, T.

    1987-01-01

    A broad understanding of the numerous ion or plasma assisted surface coating/modification processes is sought. An awareness of the principles of these processes is needed before discussing in detail the ion nitriding technology. On the basis of surface modifications arising from ion or plasma energizing and interactions, it can be broadly classified as deposition of distinct overlay coatings (sputtering-dc, radio frequency, magnetron, reactive; ion plating-diode, triode) and surface property modification without forming a discrete coating (ion implantation, ion beam mixing, laser beam irradiation, ion nitriding, ion carburizing, plasma oxidation. These techniques offer a great flexibility and are capable in tailoring desirable chemical and structural surface properties independent of the bulk properties.

  5. 14th High-Tech Plasma Processes Conference (HTPP 14)

    Science.gov (United States)

    2017-04-01

    Preface The High-Tech Plasma Processes Conference (HTPP) is a bi-annual international conference based in Europe with topics encompassing the whole area of plasma processing science. This conference is open to all the international community in the world involved in plasma science and plasma technology. The aim of the conference is to bring different scientific communities together, facilitate the contacts between science, technology and industry and provide a platform for the exploration of both fundamental topics and new applications of plasmas. For this edition of HTPP, as was the case for the last, we have achieved a well balanced participation from the communities of both thermal and non-thermal plasma researchers. 75 people from 17 countries attended the conference with the total number of contributions being 74, consisting of 19 invited talks and 55 poster contributions. As a HTPP tradition a poster competition has been carried out during the conference. The winner of the poster competition was Fabrice Mavier from Université de Limoges, France with his paper “Pulsed arc plasma jet synchronized with drop-on-demand dispenser” All the participants also ejoyed the social program including an “unconventional” tour of the city, the visit to the famous Hofbräuhaus and the dinner at the Blutenburg, a beautiful inner-city castle. We have received papers corresponding to the contributions of HTPP-2014 that have been submitted for publication in this volume of Journal of Physics: Conference Series. Each submitted contribution has been peer reviewed and the Editors are very grateful to the referees for their careful support in improving the original manuscripts. In total, 18 manuscripts have been accepted for publication covering a range of topics of plasma processing science from plasma fundamentals to process applications through to experiments, diagnostics and modelling. We deeply thank the authors for their enthusiastic and high-grade contributions and we

  6. Electron-beam generated plasmas for processing applications

    Science.gov (United States)

    Meger, Robert; Leonhardt, Darrin; Murphy, Donald; Walton, Scott; Blackwell, David; Fernsler, Richard; Lampe, Martin; Manheimer, Wallace

    2001-10-01

    NRL's Large Area Plasma Processing System (LAPPS) utilizes a 5-10 mA/cm^2, 2-4 kV, 1 cm x 30-60 cm cross section beam of electrons guided by a magnetic field to ionize a low density (10-100 mTorr) gas.[1] Beam ionization allows large area, high density, low temperature plasmas to be generated in an arbitrary gas mixture at a well defined location. Energy and composition of particle fluxes to surfaces on both sides of the plasma can be controlled by gas mixture, location, rf bias, and other factors. Experiments have been performed using both pulsed and cw beams. Extensive diagnostics (Langmuir probes, mass and ion energy analyzers, optical emissions, microwave interferometry, etc.) have been fielded to measure the plasma properties and neutral particle fluxes (ions, neutrals, free radicals) with and without rf bias on nearby surfaces both with the beam on and off. Uniform, cold (Te < 1eV), dense (ne 10^13 cm-3) plasmas in molecular and atomic gases and mixtures thereof have been produced in agreement with theoretical expectations. Initial tests of LAPPS application such as ashing, etching, sputtering, and diamond growth have been performed. Program status will be presented. [1]R.A. Meger, et al, Phys. of Plasmas 8(5), p. 2558 (2001)

  7. Low resistive edge contacts to CVD-grown graphene using a CMOS compatible metal

    Energy Technology Data Exchange (ETDEWEB)

    Shaygan, Mehrdad; Otto, Martin; Sagade, Abhay A.; Neumaier, Daniel [Advanced Microelectronic Center Aachen, AMO GmbH, Aachen (Germany); Chavarin, Carlos A. [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany); Innovations for High Performance Microelectronics, IHP GmbH, Frankfurt (Oder) (Germany); Bacher, Gerd; Mertin, Wolfgang [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany)

    2017-11-15

    The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one of the most promising solutions for realizing low ohmic contacts. In this paper the fabrication and characterization of edge contacts to large area CVD-grown monolayer graphene by means of optical lithography using CMOS compatible metals, i.e. Nickel and Aluminum is reported. Extraction of the contact resistance by Transfer Line Method (TLM) as well as the direct measurement using Kelvin Probe Force Microscopy demonstrates a very low width specific contact resistance down to 130 Ωμm. The contact resistance is found to be stable for annealing temperatures up to 150 C enabling further device processing. Using this contact scheme for edge contacts, a field effect transistor based on CVD graphene with a high transconductance of 0.63 mS/μm at 1 V bias voltage is fabricated. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. PLASMA EMISSION BY WEAK TURBULENCE PROCESSES

    Energy Technology Data Exchange (ETDEWEB)

    Ziebell, L. F.; Gaelzer, R. [Instituto de Física, UFRGS, Porto Alegre, RS (Brazil); Yoon, P. H. [Institute for Physical Science and Technology, University of Maryland, College Park, MD (United States); Pavan, J., E-mail: luiz.ziebell@ufrgs.br, E-mail: rudi.gaelzer@ufrgs.br, E-mail: yoonp@umd.edu, E-mail: joel.pavan@ufpel.edu.br [Instituto de Física e Matemática, UFPel, Pelotas, RS (Brazil)

    2014-11-10

    The plasma emission is the radiation mechanism responsible for solar type II and type III radio bursts. The first theory of plasma emission was put forth in the 1950s, but the rigorous demonstration of the process based upon first principles had been lacking. The present Letter reports the first complete numerical solution of electromagnetic weak turbulence equations. It is shown that the fundamental emission is dominant and unless the beam speed is substantially higher than the electron thermal speed, the harmonic emission is not likely to be generated. The present findings may be useful for validating reduced models and for interpreting particle-in-cell simulations.

  9. Surface modification of pitch-based spherical activated carbon by CVD of NH3 to improve its adsorption to uric acid

    International Nuclear Information System (INIS)

    Liu Chaojun; Liang Xiaoyi; Liu Xiaojun; Wang Qin; Zhan Liang; Zhang Rui; Qiao Wenming; Ling Licheng

    2008-01-01

    Surface chemistry of pitch-based spherical activated carbon (PSAC) was modified by chemical vapor deposition of NH 3 (NH 3 -CVD) to improve the adsorption properties of uric acid. The texture and surface chemistry of PSAC were studied by N 2 adsorption, pH PZC (point of zero charge), acid-base titration and X-ray photoelectron spectroscopy (XPS). NH 3 -CVD has a limited effect on carbon textural characteristics but it significantly changed the surface chemical properties, resulting in positive effects on uric acid adsorption. After modification by NH 3 -CVD, large numbers of nitrogen-containing groups (especially valley-N and center-N) are introduced on the surface of PSAC, which is responsible for the increase of pH PZC , surface basicity and uric acid adsorption capacity. Pseudo-second-order kinetic model can be used to describe the dynamic adsorption of uric acid on PSAC, and the thermodynamic parameters show that the adsorption of uric acid on PSAC is spontaneous, endothermic and irreversible process in nature

  10. Surface modification of pitch-based spherical activated carbon by CVD of NH 3 to improve its adsorption to uric acid

    Science.gov (United States)

    Liu, Chaojun; Liang, Xiaoyi; Liu, Xiaojun; Wang, Qin; Zhan, Liang; Zhang, Rui; Qiao, Wenming; Ling, Licheng

    2008-08-01

    Surface chemistry of pitch-based spherical activated carbon (PSAC) was modified by chemical vapor deposition of NH 3 (NH 3-CVD) to improve the adsorption properties of uric acid. The texture and surface chemistry of PSAC were studied by N 2 adsorption, pH PZC (point of zero charge), acid-base titration and X-ray photoelectron spectroscopy (XPS). NH 3-CVD has a limited effect on carbon textural characteristics but it significantly changed the surface chemical properties, resulting in positive effects on uric acid adsorption. After modification by NH 3-CVD, large numbers of nitrogen-containing groups (especially valley-N and center-N) are introduced on the surface of PSAC, which is responsible for the increase of pH PZC, surface basicity and uric acid adsorption capacity. Pseudo-second-order kinetic model can be used to describe the dynamic adsorption of uric acid on PSAC, and the thermodynamic parameters show that the adsorption of uric acid on PSAC is spontaneous, endothermic and irreversible process in nature.

  11. Method for atmospheric pressure reactive atom plasma processing for surface modification

    Science.gov (United States)

    Carr, Jeffrey W [Livermore, CA

    2009-09-22

    Reactive atom plasma processing can be used to shape, polish, planarize and clean the surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, and/or clean the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from the surface of the workpiece.

  12. Solar terrestrial coupling through space plasma processes

    International Nuclear Information System (INIS)

    Birn, J.

    2000-01-01

    This is the final report of a three-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project investigates plasma processes that govern the interaction between the solar wind, charged particles ejected from the sun, and the earth's magnetosphere, the region above the ionosphere governed by the terrestrial magnetic field. Primary regions of interest are the regions where different plasma populations interact with each other. These are regions of particularly dynamic plasma behavior, associated with magnetic flux and energy transfer and dynamic energy release. The investigations concerned charged particle transport and energization, and microscopic and macroscopic instabilities in the magnetosphere and adjacent regions. The approaches combined space data analysis with theory and computer simulations

  13. Plasma spray technology process parameters and applications

    International Nuclear Information System (INIS)

    Sreekumar, K.P.; Karthikeyan, J.; Ananthapadmanabhan, P.V.; Venkatramani, N.; Chatterjee, U.K.

    1991-01-01

    The current trend in the structural design philosophy is based on the use of substrate with the necessary mechanical properties and a thin coating to exhibit surface properties. Plasma spray process is a versatile surface coating technique which finds extensive application in meeting advance technologies. This report describes the plasma spray technique and its use in developing coatings for various applications. The spray system is desribed in detail including the different variables such as power input to the torch, gas flow rate, powder properties, powder injection, etc. and their interrelation in deciding the quality of the coating. A brief write-up on the various plasma spray coatings developed for different applications is also included. (author). 15 refs., 15 figs., 2 tabs

  14. Research on EBEP (Electron Beam Excited Plasma) applications; EBEP (denshi beam reiki plasma) no tekiyo gijutsu ni kansuru kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Yanase, E.; Ryoji, M.; Mori, Y.; Tokai, M. [Kawasaki Heavy Industries, Ltd., Kobe (Japan)

    1996-04-20

    Research and development is actively conducted on machining technologies using plasma in various fields, with studies energetically pursued on etching techniques or those of forming a thin film by the use of high frequency and microwave plasma. The EBEP system jointly developed by Kawasaki Heavy Industries Ltd. and Institute of Physical and Chemical Research is a plasma source for forming a high density plasma by implanting into a plasma chamber from the outside a high-current electron beam accelerated to an energy of approximately 60 to 100eV where the collision cross-section of gas ionization is maximized. The characteristics of the system are such as (1) it enables electron energy distribution to be controlled from outside by varying acceleration voltage, (2) it excels in the controllability of ion energy and (3) it allows to form a steady high-density plasma in a nonmagnetic field. This paper presents the generating principle of EBEP, its plasma characteristics, etching technique using EBEP, thin film forming technique by EBEP-CVD method, and multipurpose apparatus for research and development. 6 refs., 7 figs., 1 tab.

  15. Production method of hydrogen jet plasma process in hydro machinery

    International Nuclear Information System (INIS)

    Amini, F.

    2007-01-01

    The purpose of present paper is to the process of plasma formation in hydro machinery when a hydro turbine operates at various conditions and load rejection. By investigation the power, shock pressure , and impact effects of hydro machinery, it is revealed that energy and hydrogen are generated by the plasma process. The investigation on several turbines of various hydro power plants reveals that cold fusion process in hydro machinery generates hydrogen. The hypothesis concerning the participation of alkaline metals in river water and the atomic nuclei of the runner blade material in the formation of hydrogen are considered. It is possible to assume hydrogen, deuterium, helium, and tritium atoms (based on Dr. Mizuno and Dr. Kanarev theories) that are formed, diffuse into cavitation bubbles. The plasma is generated during the collapse of the bubble; thus, the quantity of burnt hydrogen determine the volume of generating hydrogen and the impact force caused by hydrogen explosion (noise).There are five main notions, which can determine hydrogen and plasma process: (1) turbine power effect, (2) high shock pressure, (3) crack on turbine parts, (4) impacts effects and (4) the lift of rotating parts. The frequency of the excitation lies in a range from 0.786 to 1.095 Hz.In future, it may be possible to design hydro turbines based on the plasma process that generates hydrogen; or there may exist turbines that rotate with a mixture of hydrogen explosion and water energies

  16. Patterned growth of carbon nanotubes obtained by high density plasma chemical vapor deposition

    Science.gov (United States)

    Mousinho, A. P.; Mansano, R. D.

    2015-03-01

    Patterned growth of carbon nanotubes by chemical vapor deposition represents an assembly approach to place and orient nanotubes at a stage as early as when they are synthesized. In this work, the carbon nanotubes were obtained at room temperature by High Density Plasmas Chemical Vapor Deposition (HDPCVD) system. This CVD system uses a new concept of plasma generation, where a planar coil coupled to an RF system for plasma generation was used with an electrostatic shield for plasma densification. In this mode, high density plasmas are obtained. We also report the patterned growth of carbon nanotubes on full 4-in Si wafers, using pure methane plasmas and iron as precursor material (seed). Photolithography processes were used to pattern the regions on the silicon wafers. The carbon nanotubes were characterized by micro-Raman spectroscopy, the spectra showed very single-walled carbon nanotubes axial vibration modes around 1590 cm-1 and radial breathing modes (RBM) around 120-400 cm-1, confirming that high quality of the carbon nanotubes obtained in this work. The carbon nanotubes were analyzed by atomic force microscopy and scanning electron microscopy too. The results showed that is possible obtain high-aligned carbon nanotubes with patterned growth on a silicon wafer with high reproducibility and control.

  17. Plasma processes including electron beam for off-gases purification

    International Nuclear Information System (INIS)

    Chmielewski, A.G.; Witman, S.; Licki, J.

    2011-01-01

    Complete text of publication follows. Non-thermal plasma technologies based on different methods of plasma generation are being applied for ozone generation for different applications, waste water and off-gases treatment. Plasmas create reactive species, in particular ions, radicals or other reactive compounds, which can decompose pollutant molecules, organic particulate matter or soot. Electron beam flue gas treatment is another plasma-based technology which has been successfully demonstrated on industrial scale coal fired power plants. High efficiency of SO 2 (> 95%) and NO x (> 70%) has been obtained and industrial plant applying this process has been built in Poland. The further investigations carried out all over the world have illustrated that the process can be applied for poly-aromatic hydrocarbons (PAH) destruction as well, and just recently research laboratories in the US and South Korea have reported in the feasibility of the process for mercury removal from the flue gas. The recent studies concern a new type of accelerators implementation in the industrial scale, application of the process in the high sulfur oil fired boilers and Diesel off - gases purification. The treatment of the flue gases with the high NOx concentration is a special challenge for the technology since the main energy consumption (and applied accelerators power) is related to this pollutant content in the processed off gases. The pulse beams and scavenger application can be a solution to reduce investment and operational costs. The further development of the technology is directly connected with high power accelerators development. Acknowledgement: The R and D activities are supported by the European Regional Development Found in the frame of the project PlasTEP 'Dissemination and fostering of plasma based technological innovation for environment protection in the Baltic Sea Region'.

  18. Study of Pulsed vs. RF Plasma Properties for Surface Processing Applications

    Science.gov (United States)

    Tang, Ricky; Hopkins, Matthew; Barnat, Edward; Miller, Paul

    2015-09-01

    The ability to manipulate the plasma parameters (density, E/N) was previously demonstrated using a double-pulsed column discharge. Experiments extending this to large-surface plasmas of interest to the plasma processing community were conducted. Differences between an audio-frequency pulsed plasma and a radio-frequency (rf) discharge, both prevalent in plasma processing applications, were studied. Optical emission spectroscopy shows higher-intensity emission in the UV/visible range for the pulsed plasma comparing to the rf plasma at comparable powers. Data suggest that the electron energy is higher for the pulsed plasma leading to higher ionization, resulting in increased ion density and ion flux. Diode laser absorption measurements of the concentration of the 1S5 metastable and 1S4 resonance states of argon (correlated with the plasma E/N) provide comparisons between the excitation/ionization states of the two plasmas. Preliminary modeling efforts suggest that the low-frequency polarity switch causes a much more abrupt potential variation to support interesting transport phenomena, generating a ``wave'' of higher temperature electrons leading to more ionization, as well as ``sheath capture'' of a higher density bolus of ions that are then accelerated during polarity switch.

  19. Pulse-height defect in single-crystal CVD diamond detectors

    Energy Technology Data Exchange (ETDEWEB)

    Beliuskina, O.; Imai, N. [The University of Tokyo, Center for Nuclear Study, Wako, Saitama (Japan); Strekalovsky, A.O.; Aleksandrov, A.A.; Aleksandrova, I.A.; Ilich, S.; Kamanin, D.V.; Knyazheva, G.N.; Kuznetsova, E.A.; Mishinsky, G.V.; Pyatkov, Yu.V.; Strekalovsky, O.V.; Zhuchko, V.E. [JINR, Flerov Laboratory of Nuclear Reactions, Dubna, Moscow Region (Russian Federation); Devaraja, H.M. [Manipal University, Manipal Centre for Natural Sciences, Manipal, Karnataka (India); Heinz, C. [II. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Giessen (Germany); Heinz, S. [II. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Giessen (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Hofmann, S.; Kis, M.; Kozhuharov, C.; Maurer, J.; Traeger, M. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Pomorski, M. [CEA, LIST, Diamond Sensor Laboratory, CEA/Saclay, Gif-sur-Yvette (France)

    2017-02-15

    The pulse-height versus deposited energy response of a single-crystal chemical vapor deposition (scCVD) diamond detector was measured for ions of Ti, Cu, Nb, Ag, Xe, Au, and of fission fragments of {sup 252} Cf at different energies. For the fission fragments, data were also measured at different electric field strengths of the detector. Heavy ions have a significant pulse-height defect in CVD diamond material, which increases with increasing energy of the ions. It also depends on the electrical field strength applied at the detector. The measured pulse-height defects were explained in the framework of recombination models. Calibration methods known from silicon detectors were modified and applied. A comparison with data for the pulse-height defect in silicon detectors was performed. (orig.)

  20. TSC response of irradiated CVD diamond films

    CERN Document Server

    Borchi, E; Bucciolini, M; Guasti, A; Mazzocchi, S; Pirollo, S; Sciortino, S

    1999-01-01

    CVD diamond films have been irradiated with electrons, sup 6 sup 0 Co photons and protons in order to study the dose response to exposure to different particles and energies and to investigate linearity with dose. The Thermally Stimulated Current (TSC) has been studied as a function of the dose delivered to polymethilmetacrilate (PMMA) in the range from 1 to 12 Gy with 20 MeV electrons from a linear accelerator. The TSC spectrum has revealed the presence of two components with peak temperatures of about 470 and 520 K, corresponding to levels lying in the diamond band gap with activation energies of the order of 0.7 - 1 eV. After the subtraction of the exponential background the charge emitted during the heating scan has been evaluated and has been found to depend linearly on the dose. The thermally emitted charge of the CVD diamond films has also been studied using different particles. The samples have been irradiated with the same PMMA dose of about 2 Gy with 6 and 20 MeV electrons from a Linac, sup 6 sup 0 ...

  1. Nitrogen and hydrogen related infrared absorption in CVD diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Titus, E. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal)]. E-mail: elby@mec.ua.pt; Ali, N. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal); Cabral, G. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal); Madaleno, J.C. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal); Neto, V.F. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal); Gracio, J. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal); Ramesh Babu, P [Materials Ireland, Polymer research Centre, School of Physics, Dublin (Ireland); Sikder, A.K. [Department of Physics, Indian Institute of Technology (IIT), Bombay (India); Okpalugo, T.I. [Northern Ireland Bio-Engineering Centre, NIBEC, University of Ulster (United Kingdom); Misra, D.S. [Department of Physics, Indian Institute of Technology (IIT), Bombay (India)

    2006-09-25

    In this paper, we investigate on the presence of hydrogen and nitrogen related infrared absorptions in chemical vapour deposited (CVD) diamond films. Investigations were carried out in cross sections of diamond windows, deposited using hot filament CVD (HFCVD). The results of Scanning Electron Microscopy (SEM), Fourier Transform Infrared (FTIR) and Raman spectroscopy carried out in a cross section of self-standing diamond sheets are presented. The FTIR spectra showed several features that have not been reported before. In order to confirm the frequency of nitrogen related vibrations, ab-initio calculations were carried out using GAMESS program. The investigations showed the presence of several C-N related peaks in one-phonon (1000-1333 cm{sup -1}). The deconvolution of the spectra in the three-phonon region (2700-3150 cm{sup -1}) also showed a number of vibration modes corresponding to sp {sup m}CH {sub n} phase of carbon. Elastic recoil detection analysis (ERDA) was employed to compare the H content measured using FTIR technique. Using these measurements we point out that the oscillator strength of the different IR modes varies depending upon the structure and H content of CVD diamond sheets.

  2. Thermoluminescent properties of CVD diamond: applications to ionising radiation dosimetry

    International Nuclear Information System (INIS)

    Petitfils, A.

    2007-09-01

    Remarkable properties of synthetic diamond (human soft tissue equivalence, chemical stability, non-toxicity) make this material suitable for medical application as thermoluminescent dosimeter (TLD). This work highlights the interest of this material as radiotherapy TLD. In the first stage of this work, we looked after thermoluminescent (TL) and dosimetric properties of polycrystalline diamond made by Chemically Vapor Deposited (CVD) synthesis. Dosimetric characteristics are satisfactory as TLD for medical application. Luminescence thermal quenching on diamond has been investigated. This phenomenon leads to a decrease of dosimetric TL peak sensitivity when the heating rate increases. The second part of this work analyses the use of synthetic diamond as TLD in radiotherapy. Dose profiles, depth dose distributions and the cartography of an electron beam obtained with our samples are in very good agreement with results from an ionisation chamber. It is clearly shown that CVD) diamond is of interest to check beams of treatment accelerators. The use of these samples in a control of treatment with Intensity Modulated Radiation Therapy underlines good response of synthetic diamond in high dose gradient areas. These results indicate that CVD diamond is a promising material for radiotherapy dosimetry. (author)

  3. Cold Vacuum Drying (CVD) OCRWM Loop Error Determination

    International Nuclear Information System (INIS)

    PHILIPP, B.L.

    2000-01-01

    Characterization is specifically identified by the Richland Operations Office (RL) for the Office of Civilian Radioactive Waste Management (OCRWM) of the US Department of Energy (DOE), as requiring application of the requirements in the Quality Assurance Requirements and Description (QARD) (RW-0333P DOE 1997a). Those analyses that provide information that is necessary for repository acceptance require application of the QARD. The cold vacuum drying (CVD) project identified the loops that measure, display, and record multi-canister overpack (MCO) vacuum pressure and Tempered Water (TW) temperature data as providing OCRWM data per Application of the Office of Civilian Radioactive Waste Management (OCRWM) Quality Assurance Requirements to the Hanford Spent Nuclear Fuel Project HNF-SD-SNF-RPT-007. Vacuum pressure transmitters (PT 1*08, 1*10) and TW temperature transmitters (TIT-3*05, 3*12) are used to verify drying and to determine the water content within the MCO after CVD

  4. Effect of pretreatment and deposition parameters on diamond nucleation in CVD

    International Nuclear Information System (INIS)

    Nazim, E.; Izman, S.; Ourdjini, A.; Shaharoun, A.M.

    2007-01-01

    Chemical vapour deposition (CVD) of diamond films on cemented carbide (WC) has aroused great interest in recent years. The combination of toughness from the WC and the high hardness of diamond results in outstanding wear resistance. This will increase the lifetime and better technical performance of the components made of diamond coated carbide. One of the important steps in the growth of diamond film is the nucleation of diamond as its density strongly influences the diamond growth process, film quality and morphology. In this paper the various effects of surface pretreatment and diamond deposition conditions on the diamond nucleation density are reviewed. (author)

  5. Performance of CVD and CVR coated carbon-carbon in high temperature hydrogen

    Science.gov (United States)

    Adams, J. W.; Barletta, R. E.; Svandrlik, J.; Vanier, P. E.

    As a part of the component development process for the particle bed reactor (PBR), it is necessary to develop coatings which will be time and temperature stable at extremely high temperatures in flowing hydrogen. These coatings must protect the underlying carbon structure from attack by the hydrogen coolant. Degradation which causes small changes in the reactor component, e.g. hole diameter in the hot frit, can have a profound effect on operation. The ability of a component to withstand repeated temperature cycles is also a coating development issue. Coatings which crack or spall under these conditions would be unacceptable. While refractory carbides appear to be the coating material of choice for carbon substrates being used in PBR components, the method of applying these coatings can have a large effect on their performance. Two deposition processes for these refractory carbides, chemical vapor deposition (CVD) and chemical vapor reaction (CVR), have been evaluated. Screening tests for these coatings consisted of testing of coated 2-D and 3-D weave carbon-carbon in flowing hot hydrogen at one atmosphere. Carbon loss from these samples was measured as a function of time. Exposure temperatures up to 3,000 K were used, and samples were exposed in a cyclical fashion cooling to room temperature between exposures. The results of these measurements are presented along with an evaluation of the relative merits of CVR and CVD coatings for this application.

  6. A microwave interferometer for density measurement and stabilization in process plasmas

    International Nuclear Information System (INIS)

    Pearson, D.I.C.; Campbell, G.A.; Domier, C.W.

    1988-01-01

    A low-cost heterodyne microwave interferometer system capable of measuring and/or controlling the plasma density over a dynamic range covering two orders of magnitude is demonstrated. The microwave frequency is chosen to match the size and density of plasma to be monitored. Large amplitude, high frequency fluctuations can be quantitatively followed and the longer-time-scale density can be held constant over hours of operation, for example during an inline production process to maintain uniformity and stoichiometry of films. A linear relationship is shown between plasma density and discharge current in a specific plasma device. This simple relationship makes control of the plasma straightforward using the interferometer as a density monitor. Other plasma processes could equally well benefit from such density control capability. By combining the interferometer measurement with diagnostics such as probes or optical spectroscopy, the total density profile and the constituent proportions of the various species in the plasma could be determined

  7. Treatment with liraglutide may improve markers of CVD reflected by reduced levels of apoB

    DEFF Research Database (Denmark)

    Engelbrechtsen, Line; Lundgren, J; Wewer Albrechtsen, Nicolai Jacob

    2017-01-01

    Background: Dislipidaemia and increased levels of apolipoprotein B (apoB) in individuals with obesity are risk factors for development of cardiovascular disease (CVD). The aim of this study was to investigate the effect of weight loss and weight maintenance with and without liraglutide treatment ......B, despite similar body weight maintenance. Treatment with liraglutide may therefore reduce apoB levels and thus reflect lower CVD risk. Including apoB measurements in clinical practice when monitoring patients with dislipidemia or CVD might prove to be useful....

  8. Modeling of subtle kinetic processes in plasma simulation

    International Nuclear Information System (INIS)

    Sydora, R.D.; Decyk, V.K.; Dawson, J.M.

    1988-01-01

    A new diagnostic method for plasma simulation models is presented which enables one to probe the subtle dielectric properties of the plasma medium. The procedure involves the removal of the background plasma response in order to isolate the effects of small perturbing influences which are externally added. We have found the technique accurately describes fundamental kinetic plasma behavior such as the shielding of individual test charges and currents. Wave emission studies and drag of test particles has been carried out in explicit particle algorithms as well as large time step implicit and gyrokinetic models. Accurate plasma behavior is produced and it is possible to investigate in detail, processes which can be compared with plasma kinetic theory. The technique of subtraction is not only limited to particle simulation models but also can be used in MHD or fluid models where resolution is difficult due to the intensity of the background response relative to the phenomena one is interested in measuring, such as a weakly grouwing instability or nonlinear mode coupling effect. (author)

  9. Improvement of a microwave ECR plasma source for the plasma immersion ion implantation and deposition process

    International Nuclear Information System (INIS)

    Wu Hongchen; Zhang Huafang; Peng Liping; Jiang Yanli; Ma Guojia

    2004-01-01

    The Plasma Immersion Ion Implantation and Deposition (PIII and D) process has many advantages over the pure plasma immersion ion implantation or deposition. It can compensate for or eliminate the disadvantages of the shallow modification layer (for PIII) and increase the bond strength of the coating (of deposition). For this purpose, a new type of microwave plasma source used in the PIII and D process was developed, composed of a vacuum bend wave guide and a special magnetic circuit, so that the coupling window was protected from being deposited with a coating and bombarded by high-energy particles. So the life of the window is increased. To enhance the bonding between the coating and substrate a new biasing voltage is applied to the work piece so that the implantation and deposition (or hybrid process) can be completed in one vacuum cycle

  10. Plasma analysis of different TiN PVD processes at various process parameters

    International Nuclear Information System (INIS)

    Strauss, G.N.; Schlichtherle, S.; Pulker, H.K.; Meyer, M.; Jehn, H.; Balzer, M.; Misiano, C.; Silipo, V.

    2002-01-01

    TiN coatings of some microns in thickness were deposited by different reactive plasma deposition technologies (Magnetron Sputtering Magnetically Assisted, Arc Source Ion Plating, Sputter Ion Plating Plasma Assisted) on various metal parts. The experiments were carried out in specially designed plants under variable vacuum and plasma conditions. The plasma properties of the different processes were investigated by mass spectrometry and the energy distribution of process relevant particles was additionally determined. The aim of this work was to find proper processes and conditions for a reliable low cost deposition of hard coatings at relatively high gas pressures. It was found that the magnetically forced and medium frequency pulsed biased dc magnetron sputter deposition variants, operating in the 10 -3 mbar gas pressure range, showed a relatively large amount of single and double charged positive ions with kinetic energies up to 55 and 95 eV, as consequence of the applied modifications. Cathodic arc deposition, in the same gas pressure range of 10 - 3 mbar, showed a very high number of such ions with energies up to more than 100 eV, depending on the value of the applied arc current. However, at constant distance between source and substrate the higher gas pressure increases also the number of energy reducing collisions of the coating-material vapour-species with the gas molecules. The arc source process, even when performed at high gas pressures of about 10 -1 mbar, showed a remarkable amount of ions with energies up to 75 eV resulting in high performance TiN films of quite proper 3D homogeneity. The arc source technique is able to increase film thickness uniformity up to 3 times with respect to the traditional coatings if the samples are mounted in a way that they do not influence each other. (nevyjel)

  11. Radiation tolerance of CVD diamond detectors for pions and protons

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F. E-mail: f.hartjes@nikhef.nl; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M

    2002-01-11

    The paper gives new results on the radiation tolerance of CVD diamond for irradiation with 300 MeV/c pions and 24 GeV/c protons. The measured charge signal spectrum is compared at several irradiation levels with the spectrum calculated by a model. Irradiation by particles causes damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model show that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal.

  12. Radiation tolerance of CVD diamond detectors for pions and protons

    Science.gov (United States)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L. S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J. L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.

    2002-01-01

    The paper gives new results on the radiation tolerance of CVD diamond for irradiation with 300 MeV/ c pions and 24 GeV/ c protons. The measured charge signal spectrum is compared at several irradiation levels with the spectrum calculated by a model. Irradiation by particles causes damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model show that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal.

  13. Radiation tolerance of CVD diamond detectors for pions and protons

    International Nuclear Information System (INIS)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.

    2002-01-01

    The paper gives new results on the radiation tolerance of CVD diamond for irradiation with 300 MeV/c pions and 24 GeV/c protons. The measured charge signal spectrum is compared at several irradiation levels with the spectrum calculated by a model. Irradiation by particles causes damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model show that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal

  14. Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes

    Energy Technology Data Exchange (ETDEWEB)

    Ermakova, E.N.; Sysoev, S.V.; Nikulina, L.D. [Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Acad. Lavrentiev Ave. 3, Novosibirsk 630090 (Russian Federation); Tsyrendorzhieva, I.P.; Rakhlin, V.I. [Favorskii Institute of Chemistry, Siberian Branch of the Russian Academy of Sciences, Favorskii Str. 1, Irkutsk 664033 (Russian Federation); Kosinova, M.L., E-mail: marina@niic.nsc.ru [Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Acad. Lavrentiev Ave. 3, Novosibirsk 630090 (Russian Federation)

    2015-12-20

    Highlights: • The temperature dependences of vapor pressure of four precursors have been measured. • The experimental data were used to calculate standard thermodynamic functions. • The thermodynamic modelling of SiC{sub x}N{sub y} films formation has been performed. - Abstract: Chemical vapor deposition using single-source organosilicon precursors is one of the most effective ways to produce multifunctional SiC{sub x}N{sub y} films. It is worth mentioning that the precursor molecule design affects both the composition and properties of films. Four organosilicon compounds containing a phenyl substituent (namely, trimethylphenylsilane, trimethyl(phenylamino) silane, trimethyl(benzylamino)silane and bis(trimethylsilyl)phenylamine) have been synthesized and characterized as potential CVD precursors for SiC{sub x}N{sub y} films synthesis. The compounds have been shown to be volatile and stable enough to be used in chemical vapor deposition of SiC{sub x}N{sub y} films. Thermodynamic modeling of the film deposition from the gaseous mixture of trimethylphenylsilane and ammonia in Si–C–N–H system has demonstrated that SiC{sub x}N{sub y} films can be deposited, and there is an opportunity to determine the area of appropriate deposition conditions.

  15. How dietary evidence for the prevention and treatment of CVD is translated into practice in those with or at high risk of CVD: a systematic review.

    Science.gov (United States)

    Schumacher, Tracy L; Burrows, Tracy L; Neubeck, Lis; Redfern, Julie; Callister, Robin; Collins, Clare E

    2017-01-01

    CVD is a leading cause of mortality and morbidity, and nutrition is an important lifestyle factor. The aim of the present systematic review was to synthesise the literature relating to knowledge translation (KT) of dietary evidence for the prevention and treatment of CVD into practice in populations with or at high risk of CVD. A systematic search of six electronic databases (CINAHL, Cochrane, EMBASE, MEDLINE, PsycINFO and Scopus) was performed. Studies were included if a nutrition or dietary KT was demonstrated to occur with a relevant separate measureable outcome. Quality was assessed using a tool adapted from two quality checklists. Population with or at high risk of CVD or clinicians likely to treat this population. A total of 4420 titles and abstracts were screened for inclusion, with 354 full texts retrieved to assess inclusion. Forty-three articles were included in the review, relating to thirty-five separate studies. No studies specifically stated their aim to be KT. Thirty-one studies were in patient or high-risk populations and four targeted health professionals. Few studies stated a theory on which the intervention was based (n 10) and provision of instruction was the most common behaviour change strategy used (n 26). KT in nutrition and dietary studies has been inferred, not stated, with few details provided regarding how dietary knowledge is translated to the end user. This presents challenges for implementation by clinicians and policy and decision makers. Consequently a need exists to improve the quality of publications in this area.

  16. Ion beam induced surface graphitization of CVD diamond for x-ray beam position monitor applications

    International Nuclear Information System (INIS)

    Liu, Chian; Shu, D.; Kuzay, T.M.; Wen, L.; Melendres, C.A.; Argonne National Lab., IL

    1996-01-01

    The Advanced Photon Source at ANL is a third-generation synchrotron facility that generates powerful x-ray beams on its undulator beamlines. It is important to know the position and angle of the x- ray beam during experiments. Due to very high heat flux levels, several patented x-ray beam position monitors (XBPM) exploiting chemical vapor deposition (CVD) diamond have been developed. These XBPMs have a thin layer of low-atomic-mass metallic coating so that photoemission from the x rays generate a minute but measurable current for position determination. Graphitization of the CVD diamond surface creates a very thin, intrinsic and conducting layer that can stand much higher temperatures and minimal x-ray transmission losses compared to the coated metallic layers. In this paper, a laboratory sputter ion source was used to transform selected surfaces of a CVD diamond substrate into graphite. The effect of 1-5 keV argon ion bombardment on CVD diamond surfaces at various target temperatures from 200 to 500 C was studied using Auger electron spectroscopy and in-situ electrical resistivity measurements. Graphitization after the ion bombardment has been confirmed and optimum conditions for graphitization studied. Raman spectroscopy was used to identify the overall diamond structure in the bulk of CVD diamond substrate after the ion bombardments. It was found that target temperature plays an important role in stability and electrical conductivity of the irradiated CVD diamonds

  17. Low and intermediate level radioactive waste processing in plasma reactor

    International Nuclear Information System (INIS)

    Sauchyn, V.; Khvedchyn, I.; Van Oost, G.

    2013-01-01

    Methods of low and intermediate level radioactive waste processing comprise: cementation, bituminization, curing in polymer matrices, combustion and pyrolysis. All these methods are limited in their application in the field of chemical, morphological, and aggregate composition of material to be processed. The thermal plasma method is one of the universal methods of RAW processing. The use of electric-arc plasma with mean temperatures 2000 - 8000 K can effectively carry out the destruction of organic compounds into atoms and ions with very high speeds and high degree of conversion. Destruction of complex substances without oxygen leads to a decrease of the volume of exhaust gases and dimension of gas cleaning system. This paper presents the plasma reactor for thermal processing of low and intermediate level radioactive waste of mixed morphology. The equipment realizes plasma-pyrolytic conversion of wastes and results in a conditioned product in a single stage. As a result, the volume of conditioned waste is significantly reduced (more than 10 times). Waste is converted into an environmentally friendly form that suits long-term storage. The leaching rate of macro-components from the vitrified compound is less than 1.10 -7 g/(cm 2 .day). (authors)

  18. Reference Intervals for Non-Fasting CVD Lipids and Inflammation Markers in Pregnant Indigenous Australian Women.

    Science.gov (United States)

    Schumacher, Tracy L; Oldmeadow, Christopher; Clausen, Don; Weatherall, Loretta; Keogh, Lyniece; Pringle, Kirsty G; Rae, Kym M

    2017-10-14

    Indigenous Australians experience high rates of cardiovascular disease (CVD). The origins of CVD may commence during pregnancy, yet few serum reference values for CVD biomarkers exist specific to the pregnancy period. The Gomeroi gaaynggal research project is a program that undertakes research and provides some health services to pregnant Indigenous women. Three hundred and ninety-nine non-fasting samples provided by the study participants (206 pregnancies and 175 women) have been used to construct reference intervals for CVD biomarkers during this critical time. A pragmatic design was used, in that women were not excluded for the presence of chronic or acute health states. Percentile bands for non-linear relationships were constructed according to the methods of Wright and Royston (2008), using the xriml package in StataIC 13.1. Serum cholesterol, triglycerides, cystatin-C and alkaline phosphatase increased as gestational age progressed, with little change seen in high-sensitivity C-Reactive Protein and γ glutamyl transferase. Values provided in the reference intervals are consistent with findings from other research projects. These reference intervals will form a basis with which future CVD biomarkers for pregnant Indigenous Australian women can be compared.

  19. Expanding thermal plasma chemical vapour deposition of ZnO:Al layers for CIGS solar cells

    NARCIS (Netherlands)

    Sharma, K.; Williams, B.L.; Mittal, A.; Knoops, H.C.M.; Kniknie, B.J.; Bakker, N.J.; Kessels, W.M.M.; Schropp, R.E.I.; Creatore, M.

    2014-01-01

    Aluminium-doped zinc oxide (ZnO:Al) grown by expanding thermal plasma chemical vapour deposition (ETP-CVD) has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing

  20. Enhancing quality of carbon nanotubes through a real-time controlled CVD process with application to next-generation nanosystems

    Science.gov (United States)

    Laxminarayana, Karthik; Jalili, Nader

    2004-07-01

    Nanocrystals and nanostructures will be the building blocks for future materials that will exhibit enhanced or entirely new combinations of properties with tremendous opportunity for novel technologies that can have far-reaching impact on our society. It is, however, realized that a major challenge for the near future is the design, synthesis and integration of nanostructures to develop functional nanosystems. In view of this, this exploratory research seeks to facilitate the development of a controlled and deterministic framework for nanomanufacturing of nanotubes as the most suitable choice among nanostructures for a plethora of potential applications in areas such as nanoelectronic devices, biological probes, fuel cell electrodes, supercapacitors and filed emission devices. Specifically, this paper proposes to control and maintain the most common nanotube growth parameters (i.e., reaction temperature and gas flow rate) through both software and hardware modifications. The influence of such growth parameters in a CVD process on some of the most vital and crucial aspects of nanotubes (e.g., length, diameter, yield, growth rate and structure) can be utilized to arrive at some unique and remarkable properties for the nanotubes. The objective here is, therefore, to control the process parameters to pinpoint accuracy, which would enable us to fabricate nanotubes having the desired properties and thereby maximize their ability to function at its fullest potential. To achieve this and in order to provide for experimental validation of the proposed research program, an experimental test-bed using the nanotube processing test chamber and a mechatronics workstation are being constructed.

  1. Thermodynamic study of CVD-ZrO2 phase diagrams

    International Nuclear Information System (INIS)

    Torres-Huerta, A.M.; Vargas-Garcia, J.R.; Dominguez-Crespo, M.A.; Romero-Serrano, J.A.

    2009-01-01

    Chemical vapor deposition (CVD) of zirconium oxide (ZrO 2 ) from zirconium acetylacetonate Zr(acac) 4 has been thermodynamically investigated using the Gibbs' free energy minimization method and the FACTSAGE program. Thermodynamic data Cp o , ΔH o and S o for Zr(acac) 4 have been estimated using the Meghreblian-Crawford-Parr and Benson methods because they are not available in the literature. The effect of deposition parameters, such as temperature and pressure, on the extension of the region where pure ZrO 2 can be deposited was analyzed. The results are presented as calculated CVD stability diagrams. The phase diagrams showed two zones, one of them corresponds to pure monoclinic phase of ZrO 2 and the other one corresponds to a mix of monoclinic phase of ZrO 2 and graphite carbon.

  2. Graphene growth on Ge(100)/Si(100) substrates by CVD method.

    Science.gov (United States)

    Pasternak, Iwona; Wesolowski, Marek; Jozwik, Iwona; Lukosius, Mindaugas; Lupina, Grzegorz; Dabrowski, Pawel; Baranowski, Jacek M; Strupinski, Wlodek

    2016-02-22

    The successful integration of graphene into microelectronic devices is strongly dependent on the availability of direct deposition processes, which can provide uniform, large area and high quality graphene on nonmetallic substrates. As of today the dominant technology is based on Si and obtaining graphene with Si is treated as the most advantageous solution. However, the formation of carbide during the growth process makes manufacturing graphene on Si wafers extremely challenging. To overcome these difficulties and reach the set goals, we proposed growth of high quality graphene layers by the CVD method on Ge(100)/Si(100) wafers. In addition, a stochastic model was applied in order to describe the graphene growth process on the Ge(100)/Si(100) substrate and to determine the direction of further processes. As a result, high quality graphene was grown, which was proved by Raman spectroscopy results, showing uniform monolayer films with FWHM of the 2D band of 32 cm(-1).

  3. FY 2000 report on the results of the regional consortium R and D project - Regional consortium energy R and D. Third year report. R and D of a hybrid pulse plasma coating (HPPC) system; 2000 nendo chiiki consortium kenkyu kaihatsu jigyo - chiiki consortium energy kenkyu kaihatsu. Hybrid gata pulse plasma coating (HPPC) system no kenkyu kaihatsu (dai 3 nendo) seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The development was proceeded with of the surface reforming technology system in which plasma CVD technology and PSII (plasma source ion implantation) technology are connected. HPPC forms DLC (diamond like carbon) layers excellent in adhesion and ceramic layers on the surface of work pieces such as complicatedly shaped dies and tools/sliding parts. Element technologies are the raw material gas pulse introducing technology for efficiently introducing raw materials into the reaction container in a state of gas, high density plasma formation technology and pulse plasma formation technology, minus pulse voltage application technology for vertically implanting various ions on the surface of complicatedly shaped work pieces, and advanced hybrid control technology enabling the control of ion species/implantation amount/layer formation speed. In FY 2000, using the prototype of the HPPC system, studies were made of the development of the DLC layer process and the low temperature DLC layer process, and development and commercialization of technology to improve throwing power, etc. (NEDO)

  4. Quantum tunneling resonant electron transfer process in Lorentzian plasmas

    International Nuclear Information System (INIS)

    Hong, Woo-Pyo; Jung, Young-Dae

    2014-01-01

    The quantum tunneling resonant electron transfer process between a positive ion and a neutral atom collision is investigated in nonthermal generalized Lorentzian plasmas. The result shows that the nonthermal effect enhances the resonant electron transfer cross section in Lorentzian plasmas. It is found that the nonthermal effect on the classical resonant electron transfer cross section is more significant than that on the quantum tunneling resonant charge transfer cross section. It is shown that the nonthermal effect on the resonant electron transfer cross section decreases with an increase of the Debye length. In addition, the nonthermal effect on the quantum tunneling resonant electron transfer cross section decreases with increasing collision energy. The variation of nonthermal and plasma shielding effects on the quantum tunneling resonant electron transfer process is also discussed

  5. Atomic and molecular processes in JT-60U divertor plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Takenaga, H.; Shimizu, K.; Itami, K. [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment] [and others

    1997-01-01

    Atomic and molecular data are indispensable for the understanding of the divertor characteristics, because behavior of particles in the divertor plasma is closely related to the atomic and molecular processes. In the divertor configuration, heat and particles escaping from the main plasma flow onto the divertor plate along the magnetic field lines. In the divertor region, helium ash must be effectively exhausted, and radiation must be enhanced for the reduction of the heat load onto the divertor plate. In order to exhaust helium ash effectively, the difference between behavior of neutral hydrogen (including deuterium and tritium) and helium in the divertor plasma should be understood. Radiation from the divertor plasma generally caused by the impurities which produced by the erosion of the divertor plate and/or injected by gas-puffing. Therefore, it is important to understand impurity behavior in the divertor plasma. The ions hitting the divertor plate recycle through the processes of neutralization, reflection, absorption and desorption at the divertor plates and molecular dissociation, charge-exchange reaction and ionization in the divertor plasma. Behavior of hydrogen, helium and impurities in the divertor plasmas can not be understood without the atomic and molecular data. In this report, recent results of the divertor study related to the atomic and molecular processes in JT-60U were summarized. Behavior of neural deuterium and helium was discussed in section 2. In section 3, the comparisons between the modelling of the carbon impurity transport and the measurements of C II and C IV were discussed. In section 4, characteristics of the radiative divertor using Ne puffing were reported. The new diagnostic method for the electron density and temperature in the divertor plasmas using the intensity ratios of He I lines was described in section 5. (author)

  6. Tribological Characteristics and Applications of Superhard Coatings: CVD Diamond, DLC, and c-BN

    Science.gov (United States)

    Miyoshi, Kazuhisa; Murakawa, Masao; Watanabe, Shuichi; Takeuchi, Sadao; Wu, Richard L. C.

    1999-01-01

    Results of fundamental research on the tribological properties of chemical-vapor-deposited (CVD) diamond, diamondlike carbon, and cubic boron nitride films in sliding contact with CVD diamond in ultrahigh vacuum, dry nitrogen, humid air, and water are discussed. Furthermore, the actual and potential applications of the three different superhard coatings in the field of tribology technology, particularly for wear parts and tools, are reviewed.

  7. Simulation of a perfect CVD diamond Schottky diode steep forward current–voltage characteristic

    Energy Technology Data Exchange (ETDEWEB)

    Kukushkin, V.A., E-mail: vakuk@appl.sci-nnov.ru [Institute of Applied Physics of the Russian Academy of Science, 46 Ulyanov St., 603950 Nizhny Novgorod (Russian Federation); Nizhny Novgorod State University named after N.I. Lobachevsky, 23 Gagarin pr., 603950 Nizhny Novgorod (Russian Federation)

    2016-10-01

    The kinetic equation approach to the simulation of the perfect CVD diamond Schottky diode current–voltage characteristic is considered. In result it is shown that the latter has a significantly steeper forward branch than that of perfect devices of such a type on usual semiconductors. It means that CVD diamond-based Schottky diodes have an important potential advantage over analogous devices on conventional materials.

  8. Spectral line intensity irreversibility in circulatory plasma magnetization processes

    Science.gov (United States)

    Qu, Z. Q.; Dun, G. T.

    2012-01-01

    Spectral line intensity variation is found to be irreversible in circulatory plasma magnetization process by experiments described in this paper, i.e., the curves illustrating spectral line photon fluxes irradiated from a light source immerged in a magnetic field by increasing the magnetic induction cannot be reproduced by decreasing the magnetic induction within the errors. There are two plasma magnetization patterns found. One shows that the intensities are greater at the same magnetic inductions during the magnetic induction decreasing process after the increasing, and the other gives the opposite effect. This reveals that the magneto-induced excitation and de-excitation process is irreversible like ferromagnetic magnetization. But the two irreversible processes are very different in many aspects stated in the text.

  9. Improving the work function of the niobium surface of SRF cavities by plasma processing

    International Nuclear Information System (INIS)

    Tyagi, P.V.; Doleans, M.; Hannah, B.; Afanador, R.; McMahan, C.; Stewart, S.; Mammosser, J.; Howell, M.; Saunders, J.; Degraff, B.; Kim, S.-H.

    2016-01-01

    Highlights: • An in situ plasma processing for SNS SRF cavities has been developed to remove hydrocarbons from cavity surface. • Reactive oxygen plasma is very effective to remove hydrocarbons from niobium top surface. • Reactive oxygen plasma processing increases the work function of niobium surface in the range of 0.5–1.0 eV. • It was observed that hydrocarbons can migrate at plasma cleaned top surface from near surface regions when waiting in vacuum at room temperature. • Multiple cycles of plasma processing with waiting periods in between was found beneficial to mitigate such hydrocarbons migration at plasma cleaned surface. - Abstract: An in situ plasma processing technique using chemically reactive oxygen plasma to remove hydrocarbons from superconducting radio frequency cavity surfaces at room temperature has been developed at the spallation neutron source, at Oak Ridge National Laboratory. To understand better the interaction between the plasma and niobium surface, surface studies on small samples were performed. In this article, we report the results from those surface studies. The results show that plasma processing removes hydrocarbons from top surface and improves the surface work function by 0.5–1.0 eV. Improving the work function of RF surface of cavities can help to improve their operational performance.

  10. Increased plasma apolipoprotein (a) levels in IDDM patients with diabetic nephropathy

    DEFF Research Database (Denmark)

    Tarnow, L; Rossing, P; Nielsen, F S

    1996-01-01

    OBJECTIVE: The relative mortality from cardiovascular disease (CVD) is increased 40-fold in IDDM patients suffering from diabetic nephropathy as compared with nondiabetic subjects on average. We assessed the potential contribution of dyslipidemia in general and elevated serum apolipoprotein (a.......0001. Multiple logistic regression analysis of cardiovascular risk factors revealed that plasma apo(a) concentration > 300 U/l is an independent risk factor for coronary heart disease, odds ratio 1.86 (1.03-3.36) (P Dyslipidemia and raised plasma concentrations of apo(a), particularly > 300...

  11. Plasma diagnostics with electrostatic probes in the reactive low voltage ion plating process

    International Nuclear Information System (INIS)

    Lechleitner, T.; Huber, D.; Pulker, H.K.

    2002-01-01

    The analysis of cold plasmas, which are used in thin film coating techniques, is mainly important for the understanding of the correlation between the film properties and the plasma (or the process) parameters. With the knowledge of these correlations, one is able to optimise and eventually improve the coating processes for the production of films with certain desirable properties. The plasma for the reactive-low-voltage-ion-plating processes is a cold non-isothermal plasma produced by a low-pressure dc non-self sustained arc discharge, controlled by two main parameters, the arc current and the total gas pressure in the chamber. It was shown that the arc current is in a direct linear relation to the degree of ionization and the increase of the total gas pressure has a contrary effect. Besides, it was also demonstrated, that the usage of electrostatic probes for the plasma analysis od deposition processes is a powerful tool to complete the common plasma monitor measurements (energy analysing quadrupol mass spectrometer) and to improve the understanding of industrially used plasma. (nevyjel)

  12. In-situ plasma processing to increase the accelerating gradients of superconducting radio-frequency cavities

    Science.gov (United States)

    Doleans, M.; Tyagi, P. V.; Afanador, R.; McMahan, C. J.; Ball, J. A.; Barnhart, D. L.; Blokland, W.; Crofford, M. T.; Degraff, B. D.; Gold, S. W.; Hannah, B. S.; Howell, M. P.; Kim, S.-H.; Lee, S.-W.; Mammosser, J.; Neustadt, T. S.; Saunders, J. W.; Stewart, S.; Strong, W. H.; Vandygriff, D. J.; Vandygriff, D. M.

    2016-03-01

    A new in-situ plasma processing technique is being developed at the Spallation Neutron Source (SNS) to improve the performance of the cavities in operation. The technique utilizes a low-density reactive oxygen plasma at room temperature to remove top surface hydrocarbons. The plasma processing technique increases the work function of the cavity surface and reduces the overall amount of vacuum and electron activity during cavity operation; in particular it increases the field emission onset, which enables cavity operation at higher accelerating gradients. Experimental evidence also suggests that the SEY of the Nb surface decreases after plasma processing which helps mitigating multipacting issues. In this article, the main developments and results from the plasma processing R&D are presented and experimental results for in-situ plasma processing of dressed cavities in the SNS horizontal test apparatus are discussed.

  13. A diet rich in high-glucoraphanin broccoli interacts with genotype to reduce discordance in plasma metabolite profiles by modulating mitochondrial function123

    Science.gov (United States)

    Armah, Charlotte N; Traka, Maria H; Dainty, Jack R; Defernez, Marianne; Janssens, Astrid; Leung, Wing; Doleman, Joanne F; Potter, John F

    2013-01-01

    Background: Observational and experimental studies suggest that diets rich in cruciferous vegetables and glucosinolates may reduce the risk of cancer and cardiovascular disease (CVD). Objective: We tested the hypothesis that a 12-wk dietary intervention with high-glucoraphanin (HG) broccoli would modify biomarkers of CVD risk and plasma metabolite profiles to a greater extent than interventions with standard broccoli or peas. Design: Subjects were randomly assigned to consume 400 g standard broccoli, 400 g HG broccoli, or 400 g peas each week for 12 wk, with no other dietary restrictions. Biomarkers of CVD risk and 347 plasma metabolites were quantified before and after the intervention. Results: No significant differences in the effects of the diets on biomarkers of CVD risk were found. Multivariate analyses of plasma metabolites identified 2 discrete phenotypic responses to diet in individuals within the HG broccoli arm, differentiated by single nucleotide polymorphisms associated with the PAPOLG gene. Univariate analysis showed effects of sex (P broccoli arm, the consequence of the intervention was to reduce variation in lipid and amino acid metabolites, tricarboxylic acid (TCA) cycle intermediates, and acylcarnitines between the 2 PAPOLG genotypes. Conclusions: The metabolic changes observed with the HG broccoli diet are consistent with a rebalancing of anaplerotic and cataplerotic reactions and enhanced integration of fatty acid β-oxidation with TCA cycle activity. These modifications may contribute to the reduction in cancer risk associated with diets that are rich in cruciferous vegetables. This trial was registered at clinicaltrials.gov as NCT01114399. PMID:23964055

  14. Research progress of laser welding process dynamic monitoring technology based on plasma characteristics signal

    Directory of Open Access Journals (Sweden)

    Teng WANG

    2017-02-01

    Full Text Available During the high-power laser welding process, plasmas are induced by the evaporation of metal under laser radiation, which can affect the coupling of laser energy and the workpiece, and ultimately impact on the reliability of laser welding quality and process directly. The research of laser-induced plasma is a focus in high-power deep penetration welding field, which provides a promising research area for realizing the automation of welding process quality inspection. In recent years, the research of laser welding process dynamic monitoring technology based on plasma characteristics is mainly in two aspects, namely the research of plasma signal detection and the research of laser welding process modeling. The laser-induced plasma in the laser welding is introduced, and the related research of laser welding process dynamic monitoring technology based on plasma characteristics at home and abroad is analyzed. The current problems in the field are summarized, and the future development trend is put forward.

  15. DU Processing Efficiency and Reclamation: Plasma Arc Melting

    Energy Technology Data Exchange (ETDEWEB)

    Imhoff, Seth D. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Aikin, Jr., Robert M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Swenson, Hunter [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Solis, Eunice Martinez [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-09-26

    The work described here corresponds to one piece of a larger effort to increase material usage efficiency during DU processing operations. In order to achieve this goal, multiple technologies and approaches are being tested. These technologies occupy a spectrum of technology readiness levels (TRLs). Plasma arc melting (PAM) is one of the technologies being investigated. PAM utilizes a high temperature plasma to melt materials. Depending on process conditions, there are potential opportunities for recycling and material reclamation. When last routinely operational, the LANL research PAM showed extremely promising results for recycling and reclamation of DU and DU alloys. The current TRL is lower due to machine idleness for nearly two decades, which has proved difficult to restart. This report describes the existing results, promising techniques, and the process of bringing this technology back to readiness at LANL.

  16. Imploding process and x-ray emission of shotgun z-pinch plasma

    International Nuclear Information System (INIS)

    Muto, Ryusuke; Takasugi, Keiichi; Miyamoto, Tetsu

    2001-01-01

    Rayleigh-Taylor instability was observed on the surface of a contracting z-pinch plasma. Wavelength of the instability was analyzed from the envelope of the profile, and it increased with implosion. Analysis with finite Larmor radius effect shows that there is some acceleration of ions during the contraction process. A suggestion to obtain macroscopically uniform plasma is to increase plasma current without heating the plasma. (author)

  17. Imploding process and x-ray emission of shotgun z-pinch plasma

    Energy Technology Data Exchange (ETDEWEB)

    Muto, Ryusuke [Nihon University, College of Science and Technology, Tokyo (Japan); Takasugi, Keiichi; Miyamoto, Tetsu [Nihon University, Atomic Energy Research Institute, Tokyo (Japan)

    2001-09-01

    Rayleigh-Taylor instability was observed on the surface of a contracting z-pinch plasma. Wavelength of the instability was analyzed from the envelope of the profile, and it increased with implosion. Analysis with finite Larmor radius effect shows that there is some acceleration of ions during the contraction process. A suggestion to obtain macroscopically uniform plasma is to increase plasma current without heating the plasma. (author)

  18. On the possibility of the multiple inductively coupled plasma and helicon plasma sources for large-area processes

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jin-Won; Lee, Yun-Seong, E-mail: leeeeys@kaist.ac.kr; Chang, Hong-Young [Low-temperature Plasma Laboratory, Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); An, Sang-Hyuk [Agency of Defense Development, Yuseong-gu, Daejeon 305-151 (Korea, Republic of)

    2014-08-15

    In this study, we attempted to determine the possibility of multiple inductively coupled plasma (ICP) and helicon plasma sources for large-area processes. Experiments were performed with the one and two coils to measure plasma and electrical parameters, and a circuit simulation was performed to measure the current at each coil in the 2-coil experiment. Based on the result, we could determine the possibility of multiple ICP sources due to a direct change of impedance due to current and saturation of impedance due to the skin-depth effect. However, a helicon plasma source is difficult to adapt to the multiple sources due to the consistent change of real impedance due to mode transition and the low uniformity of the B-field confinement. As a result, it is expected that ICP can be adapted to multiple sources for large-area processes.

  19. Increased risk of cardiovascular disease (CVD) with age in HIV-positive men

    DEFF Research Database (Denmark)

    Petoumenos, K; Reiss, P; Ryom, L

    2014-01-01

    equations. METHODS: We analysed three endpoints: myocardial infarction (MI), coronary heart disease (CHD: MI or invasive coronary procedure) and CVD (CHD or stroke). We fitted a number of parametric age effects, adjusting for known risk factors and antiretroviral therapy (ART) use. The best-fitting age...... rates per 1000 person-years increased from 2.29, 3.11 and 3.65 in those aged 40-45 years to 6.53, 11.91 and 15.89 in those aged 60-65 years, respectively. The best-fitting models included inverse age for MI and age + age(2) for CHD and CVD. In D:A:D there was a slowly accelerating increased risk of CHD...... and CVD per year older, which appeared to be only modest yet was consistently raised compared with the risk in the general population. The relative risk of MI with age was not different between D:A:D and the general population. CONCLUSIONS: We found only limited evidence of accelerating increased risk...

  20. High collection efficiency CVD diamond alpha detectors

    International Nuclear Information System (INIS)

    Bergonzo, P.; Foulon, F.; Marshall, R.D.; Jany, C.; Brambilla, A.; McKeag, R.D.; Jackman, R.B.

    1998-01-01

    Advances in Chemical Vapor Deposited (CVD) diamond have enabled the routine use of this material for sensor device fabrication, allowing exploitation of its unique combination of physical properties (low temperature susceptibility (> 500 C), high resistance to radiation damage (> 100 Mrad) and to corrosive media). A consequence of CVD diamond growth on silicon is the formation of polycrystalline films which has a profound influence on the physical and electronic properties with respect to those measured on monocrystalline diamond. The authors report the optimization of physical and geometrical device parameters for radiation detection in the counting mode. Sandwich and co-planar electrode geometries are tested and their performances evaluated with regard to the nature of the field profile and drift distances inherent in such devices. The carrier drift length before trapping was measured under alpha particles and values as high as 40% of the overall film thickness are reported. Further, by optimizing the device geometry, they show that a gain in collection efficiency, defined as the induced charge divided by the deposited charge within the material, can be achieved even though lower bias values are used

  1. Achievement report for fiscal 1984 on Sunshine Program-entrusted research and development. Research and development of amorphous solar cells (Research on amorphous silicon interface); 1984 nendo amorphous taiyo denchi no kenkyu kaihatsu seika hokokusho. Amorphous silicon no kaimen no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1985-03-01

    As for the formation of amorphous semiconductors by photo-CVD (chemical vapor deposition) processes, details are examined of a-Si formed by the excimer laser-excited photo-CVD process, a-SiC formed by the directly excited photo-CVD process, a-SiGe formed by the mercury sensitized reaction photo-CVD process, and {mu}c-Si formed by the mercury-sensitized reaction photo-CVD process. It is then found that all of the said materials are superior to a product of the plasma CVD process in terms of film quality. As for the fabrication of amorphous Si solar cells by a photo-CVD process, a 3-separate-chamber unit is built, in which all the p-, I-, and n-layer are formed by photo-CVD. It is then found that the introduction of a buffer layer into the p/I interface is a powerful tool to enhance efficiency and that the use of the buffer zone brings about an increase of 9% or more in conversion efficiency. In the case of an amorphous solar cell using monosilane, buffer layer introduction results in a conversion efficiency of 9.05%. (NEDO)

  2. Cardiovascular disease (CVD) and chronic kidney disease (CKD) event rates in HIV-positive persons at high predicted CVD and CKD risk

    DEFF Research Database (Denmark)

    Boyd, Mark A; Mocroft, Amanda; Ryom, Lene

    2017-01-01

    BACKGROUND: The Data Collection on Adverse Events of Anti-HIV Drugs (D:A:D) study has developed predictive risk scores for cardiovascular disease (CVD) and chronic kidney disease (CKD, defined as confirmed estimated glomerular filtration rate [eGFR] ≤ 60 ml/min/1.73 m2) events in HIV...

  3. Plasma processes in water under effect of short duration pulse discharges

    Science.gov (United States)

    Gurbanov, Elchin

    2013-09-01

    It is very important to get a clear water without any impurities and bacteria by methods, that don't change the physical and chemical indicators of water now. In this article the plasma processes during the water treatment by strong electric fields and short duration pulse discharges are considered. The crown discharge around an electrode with a small radius of curvature consists of plasma leader channels with a high conductivity, where the thermo ionization processes and UV-radiation are taken place. Simultaneously the partial discharges around potential electrode lead to formation of atomic oxygen and ozone. The spark discharge arises, when plasma leader channels cross the all interelectrode gap, where the temperature and pressure are strongly grown. As a result the shock waves and dispersing liquid streams in all discharge gap are formed. The plasma channels extend, pressure inside it becomes less than hydrostatic one and the collapse and UV-radiation processes are started. The considered physical processes can be successfully used as a basis for development of pilot-industrial installations for conditioning of drinking water and to disinfecting of sewage.

  4. One possible method of mathematical modeling of turbulent transport processes in plasma

    International Nuclear Information System (INIS)

    Skvortsova, Nina N.; Batanov, German M.; Petrov, Alexander E.; Pshenichnikov, Anton A.; Sarksyan, Karen A.; Kharchev, Nikolay K.; Bening, Vladimir E.; Korolev, Victor Yu.

    2003-01-01

    It is proposed to use the mathematical modeling of the increments of fluctuating plasma variables to analyzing the probability characteristics of turbulent transport processes in plasma. It is shown that, in plasma of the L-2M stellarator and the TAU-1 linear device, the increments of the process of local fluctuating particle flux are stochastic in nature and their distribution is a scale mixture of Gaussians. (author)

  5. A novel Mo-W interlayer approach for CVD diamond deposition on steel

    Science.gov (United States)

    Kundrát, Vojtěch; Zhang, Xiaoling; Cooke, Kevin; Sun, Hailin; Sullivan, John; Ye, Haitao

    2015-04-01

    Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD) processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference in the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42) substrates using a multi-structured molybdenum (Mo) - tungsten (W) interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.

  6. A novel Mo-W interlayer approach for CVD diamond deposition on steel

    Energy Technology Data Exchange (ETDEWEB)

    Kundrát, Vojtěch; Sullivan, John; Ye, Haitao, E-mail: h.ye@aston.ac.uk [School of Engineering and Applied Science, Aston University, Birmingham, B4 7ET (United Kingdom); Zhang, Xiaoling; Cooke, Kevin; Sun, Hailin [Miba Coating Group: Teer Coatings Ltd, West-Stone-House, West-Stone, Berry-Hill-Industrial-Estate, WR9 9AS, Droitwich (United Kingdom)

    2015-04-15

    Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD) processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference in the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42) substrates using a multi-structured molybdenum (Mo) – tungsten (W) interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.

  7. A novel Mo-W interlayer approach for CVD diamond deposition on steel

    Directory of Open Access Journals (Sweden)

    Vojtěch Kundrát

    2015-04-01

    Full Text Available Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference in the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42 substrates using a multi-structured molybdenum (Mo – tungsten (W interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.

  8. Electromagnetic effects in high-frequency capacitive discharges used for plasma processing

    International Nuclear Information System (INIS)

    Chabert, P

    2007-01-01

    In plasma processing, capacitive discharges have classically been operated in the electrostatic regime, for which the excitation wavelength λ is much greater than the electrode radius, and the plasma skin depth δ is much greater than the electrode spacing. However, contemporary reactors are larger and excited at higher frequencies which leads to strong electromagnetic effects. This paper gives a review of the work that has recently been carried out to carefully model and diagnose these effects, which cause major uniformity problems in plasma processing for microelectronics and flat panel displays industries. (topical review)

  9. Research of plasma-electrolyte discharge in the processes of obtaining metallic powders

    Science.gov (United States)

    Kashapov, R. N.; Kashapov, L. N.; Kashapov, N. F.

    2017-11-01

    The use of the plasma electrolyte process has never been considered as a simple, cheap and fast method of obtaining powders used in selective laser melting processes. Therefore, the adaptation of the plasma-electrolyte process to the production of metal powders used in additive production is an urgent task. The paper presents the results of studies of gas discharge parameters between a metal and liquid electrode in the processes of obtaining metallic iron powders. The discharge combustion conditions necessary for the formation of metal powders of micron size are determined. A possible mechanism for the formation of powder particles in a discharge plasma is proposed.

  10. Higher plasma soluble Receptor for Advanced Glycation End Products (sRAGE) levels are associated with incident cardiovascular disease and all-cause mortality in type 1 diabetes: a 12-year follow-up study

    DEFF Research Database (Denmark)

    Nin, Johanna W M; Jorsal, Anders; Merces Ferreira, Isabel Maria

    2010-01-01

    To investigate the associations of plasma levels of soluble receptor for advanced glycation end products (sRAGE) with incident cardiovascular disease (CVD) and all-cause mortality in type 1 diabetes and the extent to which any such associations could be explained by endothelial and renal dysfunct......To investigate the associations of plasma levels of soluble receptor for advanced glycation end products (sRAGE) with incident cardiovascular disease (CVD) and all-cause mortality in type 1 diabetes and the extent to which any such associations could be explained by endothelial and renal...

  11. Dynamics and structure of ignition process in plasma. Ignition dynamics and structure of laboratory plasmas

    International Nuclear Information System (INIS)

    Nagasaki, Kazunobu; Takamura, Shuichi; Razzak, Md. Abdur; Uesugi, Yoshihiko; Yoshimura, Yasuo; Cappa, Alvaro

    2008-01-01

    The dynamics and structure of plasma production are stated by the results of two experiments such as the radio frequency thermal plasmas produced by inductively coupled plasma technique at atmospheric pressure and the second harmonic ECH. The first experiment results explained transition from the electrostatic discharge mode of forming streamer to the induced discharge mode after forming the discharge channel that the streamer connected to in the azimuth direction. The other experiment explained the dynamics which the initial plasma produced at the ECH resonance point spread in the direction of radius. The divergence and transition related to the nonlinear process were observed independently existing the magnetic field or incident power. The experiment devices, conditions, results, and modeling are reported. (S.Y.)

  12. Microwave plasma emerging technologies for chemical processes

    NARCIS (Netherlands)

    de la Fuente, Javier F.; Kiss, Anton A.; Radoiu, Marilena T.; Stefanidis, Georgios D.

    2017-01-01

    Microwave plasma (MWP) technology is currently being used in application fields such as semiconductor and material processing, diamond film deposition and waste remediation. Specific advantages of the technology include the enablement of a high energy density source and a highly reactive medium,

  13. On the potential of Hg-Photo-CVD process for the low temperature growth of nano-crystalline silicon (Topical review)

    International Nuclear Information System (INIS)

    Barhdadi, A.

    2005-08-01

    Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides an overview of this technique, with the emphasis on its potential in low temperature elaboration of nano-crystalline silicon for the development of thin films photovoltaic technology. (author)

  14. Spent Nuclear Fuel (SNF) Project Cold Vacuum Drying (CVD) Facility Operations Manual

    Energy Technology Data Exchange (ETDEWEB)

    IRWIN, J.J.

    2000-02-03

    This document provides the Operations Manual for the Cold Vacuum Drying Facility (CVDF). The Manual was developed in conjunction with HNF-SD-SNF-SAR-002, Safety Analysis Report for the Cold Vacuum Drying Facility, Phase 2, Supporting Installation of the Processing Systems (Garvin 1998) and, the HNF-SD-SNF-DRD-002, 1997, Cold Vacuum Drying Facility Design Requirements, Rev. 3a. The Operations Manual contains general descriptions of all the process, safety and facility systems in the CVDF, a general CVD operations sequence, and has been developed for the spent nuclear fuel project (SNFP) Operations Organization and shall be updated, expanded, and revised in accordance with future design, construction and startup phases of the CVDF until the CVDF final ORR is approved.

  15. Spent Nuclear Fuel (SNF) Project Cold Vacuum Drying (CVD) Facility Operations Manual

    International Nuclear Information System (INIS)

    IRWIN, J.J.

    2000-01-01

    This document provides the Operations Manual for the Cold Vacuum Drying Facility (CVDF). The Manual was developed in conjunction with HNF-SD-SNF-SAR-002, Safety Analysis Report for the Cold Vacuum Drying Facility, Phase 2, Supporting Installation of the Processing Systems (Garvin 1998) and, the HNF-SD-SNF-DRD-002, 1997, Cold Vacuum Drying Facility Design Requirements, Rev. 3a. The Operations Manual contains general descriptions of all the process, safety and facility systems in the CVDF, a general CVD operations sequence, and has been developed for the spent nuclear fuel project (SNFP) Operations Organization and shall be updated, expanded, and revised in accordance with future design, construction and startup phases of the CVDF until the CVDF final ORR is approved

  16. Thermoluminescence properties of undoped and nitrogen-doped CVD diamond exposed to gamma radiation

    International Nuclear Information System (INIS)

    Barboza-Flores, M.; Gastelum, S.; Cruz-Zaragoza, E.; Melendrez, R.; Chernov, V.; Pedroza-Montero, M.; Favalli, A.

    2008-01-01

    It is known that the thermoluminescence (TL) performance of CVD diamond depends on the impurity concentration and doping materials introduced during growing. We report on the TL properties of undoped and 750 ppm nitrogen-doped CVD diamond grown on (0 0 1) silicon substrate. The samples were exposed to gamma radiation from a Gammacell 200 Nordion irradiator in the 10-500 Gy dose range at 627 mGy/min dose rate. The nitrogen-doped CVD diamond sample exhibited a TL glow curve peaked around 537 K and a small shoulder about 411 K and a linear dose behavior in the 10-60 Gy dose range. In contrast, the undoped specimen showed a 591 K peaked TL glow curve and linear dose response for 10-100 Gy doses. However, both samples displayed a non-linear dose response for doses higher than 100 Gy. The doping effects seem to cause a higher TL efficiency, which may be attributed to the differences in the diamond bonding and amorphous carbon on the CVD samples as well as to the presence of nitrogen. In addition, the nitrogen content may produce some structural and morphological surface effects, which may account for the distinctive TL features and dose response of the diamond samples

  17. Characterization of surface hardening in a nitrated chromium steel by microwave plasma type ECR (Electron Cyclotron Resonance); Caracterizacion del endurecimiento superficial del acero H-12 nitrurado con plasma de microondas tipo ECR

    Energy Technology Data Exchange (ETDEWEB)

    La O C, G de

    1996-12-31

    With this work it is demonstrated the possibility of performing the nitriding process by using a CVD-ECR source, based on the results obtained after treating several samples of AISI H-12 steel. Also, the main operating parameters (time of treatment, sample temperatures and gas mixture) are determined during nitriding of this steel with the mentioned source. Samples used before nitriding were quenched and tempered at 580 Centigrade degrees. Several experiments were done by using a pure nitrogen plasma with exposure times of the samples of 20 minutes at temperatures from 450 to 550 Centigrade degrees, and by using a N{sub 2} - H{sub 2} plasma with exposure times of the samples of 20, 30 and 40 minutes at temperatures from 350 to 550 Centigrade degrees. Metallography, microhardness, EDS and Auger analysis were done to observe changes suffered for the samples after treatment. (Author).

  18. Crystallization process of a three-dimensional complex plasma

    Science.gov (United States)

    Steinmüller, Benjamin; Dietz, Christopher; Kretschmer, Michael; Thoma, Markus H.

    2018-05-01

    Characteristic timescales and length scales for phase transitions of real materials are in ranges where a direct visualization is unfeasible. Therefore, model systems can be useful. Here, the crystallization process of a three-dimensional complex plasma under gravity conditions is considered where the system ranges up to a large extent into the bulk plasma. Time-resolved measurements exhibit the process down to a single-particle level. Primary clusters, consisting of particles in the solid state, grow vertically and, secondarily, horizontally. The box-counting method shows a fractal dimension of df≈2.72 for the clusters. This value gives a hint that the formation process is a combination of local epitaxial and diffusion-limited growth. The particle density and the interparticle distance to the nearest neighbor remain constant within the clusters during crystallization. All results are in good agreement with former observations of a single-particle layer.

  19. Atmospheric pressure plasma processing of polymeric materials utilizing close proximity indirect exposure

    Science.gov (United States)

    Paulauskas, Felix L.; Bonds, Truman

    2016-09-20

    A plasma treatment method that includes providing treatment chamber including an intermediate heating volume and an interior treatment volume. The interior treatment volume contains an electrode assembly for generating a plasma and the intermediate heating volume heats the interior treatment volume. A work piece is traversed through the treatment chamber. A process gas is introduced to the interior treatment volume of the treatment chamber. A plasma is formed with the electrode assembly from the process gas, wherein a reactive species of the plasma is accelerated towards the fiber tow by flow vortices produced in the interior treatment volume by the electrode assembly.

  20. Plasma processing conditions substantially influence circulating microRNA biomarker levels.

    Science.gov (United States)

    Cheng, Heather H; Yi, Hye Son; Kim, Yeonju; Kroh, Evan M; Chien, Jason W; Eaton, Keith D; Goodman, Marc T; Tait, Jonathan F; Tewari, Muneesh; Pritchard, Colin C

    2013-01-01

    Circulating, cell-free microRNAs (miRNAs) are promising candidate biomarkers, but optimal conditions for processing blood specimens for miRNA measurement remain to be established. Our previous work showed that the majority of plasma miRNAs are likely blood cell-derived. In the course of profiling lung cancer cases versus healthy controls, we observed a broad increase in circulating miRNA levels in cases compared to controls and that higher miRNA expression correlated with higher platelet and particle counts. We therefore hypothesized that the quantity of residual platelets and microparticles remaining after plasma processing might impact miRNA measurements. To systematically investigate this, we subjected matched plasma from healthy individuals to stepwise processing with differential centrifugation and 0.22 µm filtration and performed miRNA profiling. We found a major effect on circulating miRNAs, with the majority (72%) of detectable miRNAs substantially affected by processing alone. Specifically, 10% of miRNAs showed 4-30x variation, 46% showed 30-1,000x variation, and 15% showed >1,000x variation in expression solely from processing. This was predominantly due to platelet contamination, which persisted despite using standard laboratory protocols. Importantly, we show that platelet contamination in archived samples could largely be eliminated by additional centrifugation, even in frozen samples stored for six years. To minimize confounding effects in microRNA biomarker studies, additional steps to limit platelet contamination for circulating miRNA biomarker studies are necessary. We provide specific practical recommendations to help minimize confounding variation attributable to plasma processing and platelet contamination.

  1. Mixed plasma-facing materials research at INEEL

    International Nuclear Information System (INIS)

    Anderl, R.A.; Longhurst, G.R.; Pawelko, R.J.

    2001-01-01

    Mixed-materials research at the Idaho National Engineering and Environmental Laboratory (INEEL) has focused on Be-C and W-C systems. The purpose of this work was to investigate hydrogen isotope retention in these systems. Plasma-mixed material layers using carbon coated Be and W specimens that were heat-treated and tungsten carbide specimens prepared by chemical vapor deposition (CVD) were simulated. Hydrogen isotope retention was investigated by means of thermal desorption spectroscopy (TDS) measurements on deuterium implanted samples

  2. Surface PIXE analysis of phosphorus in a thin SiO2 (P, B) CVD layer deposited onto Si substrate

    International Nuclear Information System (INIS)

    Roumie, M.; Nsouli, B.

    2001-01-01

    Phosphorus determination, at level of percent, in Si matrix is not an easy analytical task. The analyzed materials arc Borophosphosilicate glass which are an important component of silicon based semiconductor technology. It's a thin SiO2 layer (400 nm) doped with boron and phosphorus using, in general, CVD (Chemical Vapor Deposition) process, in order to improve its plasticity, and deposited onto Si substrate. Therefore, the mechanical behaviour of the CVD SiO2 (P, B) layer is very sensitive to the phosphorus concentration. In this work we explore the capability of FIXE (Particle Induced X-ray Emission) to monitor a rapid and accurate quantification of P which is usually very low in such materials (few percent of the thin CVD layer deposited onto a silicon substrate). A systematic study is undertaken using Proton (0.5-3 MeV energy) and helium (1-3 MeV energy) beams, different thickness of X-ray absorber (131 and 146 μm of Kapton filter) and different tilting angles (0,45,60 and 80 deg.). The optimized measurement conditions should improve the P signal detection comparing to the Si and Background ones

  3. Fish consumption and its motives in households with versus without self-reported medical history of CVD

    DEFF Research Database (Denmark)

    Pieniak, Zuzanna; Verbeke, Wim; Perez-Cueto, Federico

    2008-01-01

    subjective and objective knowledge related to nutrition issues about fish. In the other countries, objective knowledge about fish was on a low level, similar for CVD+ as for CVD- subjects, despite a higher claimed use of medical information sources about fish among CVD+ subjects. Conclusions - Although...... consumption. This study exemplifies the need for nutrition education and more effective communication about fish, not only to the people facing chronic diseases, but also to the broader public. European consumers are convinced that eating fish is healthy, but particular emphasis should be made...

  4. Chemical vapor deposition of Si/SiC nano-multilayer thin films

    International Nuclear Information System (INIS)

    Weber, A.; Remfort, R.; Woehrl, N.; Assenmacher, W.; Schulz, S.

    2015-01-01

    Stoichiometric SiC films were deposited with the commercially available single source precursor Et_3SiH by classical thermal chemical vapor deposition (CVD) as well as plasma-enhanced CVD at low temperatures in the absence of any other reactive gases. Temperature-variable deposition studies revealed that polycrystalline films containing different SiC polytypes with a Si to carbon ratio of close to 1:1 are formed at 1000 °C in thermal CVD process and below 100 °C in the plasma-enhanced CVD process. The plasma enhanced CVD process enables the reduction of residual stress in the deposited films and offers the deposition on temperature sensitive substrates in the future. In both deposition processes the film thickness can be controlled by variation of the process parameters such as the substrate temperature and the deposition time. The resulting material films were characterized with respect to their chemical composition and their crystallinity using scanning electron microscope, energy dispersive X-ray spectroscopy (XRD), atomic force microscopy, X-ray diffraction, grazing incidence X-ray diffraction, secondary ion mass spectrometry and Raman spectroscopy. Finally, Si/SiC multilayers of up to 10 individual layers of equal thickness (about 450 nm) were deposited at 1000 °C using Et_3SiH and SiH_4. The resulting multilayers features amorphous SiC films alternating with Si films, which feature larger crystals up to 300 nm size as measured by transmission electron microscopy as well as by XRD. XRD features three distinct peaks for Si(111), Si(220) and Si(311). - Highlights: • Stoichiometric silicon carbide films were deposited from a single source precursor. • Thermal as well as plasma-enhanced chemical vapor deposition was used. • Films morphology, crystallinity and chemical composition were characterized. • Silicon/silicon carbide multilayers of up to 10 individual nano-layers were deposited.

  5. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

    Science.gov (United States)

    Hamann, S.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.; Röpcke, J.

    2015-12-01

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH4, C2H2, HCN, and NH3). With the help of OES, the rotational temperature of the screen plasma could be determined.

  6. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

    International Nuclear Information System (INIS)

    Hamann, S.; Röpcke, J.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.

    2015-01-01

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH 4 , C 2 H 2 , HCN, and NH 3 ). With the help of OES, the rotational temperature of the screen plasma could be determined

  7. Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

    Energy Technology Data Exchange (ETDEWEB)

    Hamann, S., E-mail: hamann@inp-greifswald.de; Röpcke, J. [INP-Greifswald, Felix-Hausdorff-Str. 2, 17489 Greifswald (Germany); Börner, K.; Burlacov, I.; Spies, H.-J. [TU Bergakademie Freiberg, Institute of Materials Engineering, Gustav-Zeuner-Str. 5, 09599 Freiberg (Germany); Strämke, M.; Strämke, S. [ELTRO GmbH, Arnold-Sommerfeld-Ring 3, 52499 Baesweiler (Germany)

    2015-12-15

    A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH{sub 4}, C{sub 2}H{sub 2}, HCN, and NH{sub 3}). With the help of OES, the rotational temperature of the screen plasma could be determined.

  8. Plasma processing of compacted drums of simulated radioactive waste

    International Nuclear Information System (INIS)

    Geimer, R.; Batdorf, J.; Larsen, M.M.

    1991-01-01

    The charter of the Department of Energy (DOE) Office of Technology Development (OTD) is to identify and develop technologies that have potential application in the treatment of DOE wastes. One particular waste of concern within the DOE is transuranic (TRU) waste, which is generated and stored at several DOE sites. High temperature DC arc generated plasma technology is an emerging treatment method for TRU waste, and its use has the potential to provide many benefits in the management of TRU. This paper begins by discussing the need for development of a treatment process for TRU waste, and the potential benefits that a plasma waste treatment system can provide in treating TRU waste. This is followed by a discussion of the results of a project conducted for the DOE to demonstrate the effectiveness of a plasma process for treating supercompacted TRU waste. 1 fig., 1 tab

  9. Recent progress in thin film processing by magnetron sputtering with plasma diagnostics

    International Nuclear Information System (INIS)

    Han, Jeon G

    2009-01-01

    The precise control of the structure and related properties becomes crucial for sophisticated applications of thin films deposited by magnetron sputtering in emerging industries including the flat panel display, digital electronics and nano- and bio-industries. The film structure is closely related to the total energy delivered to the substrate surface for nucleation and growth during all kinds of thin film processes, including magnetron sputtering. Therefore, the energy delivered to the surface for nucleation and growth during magnetron sputtering should be measured and analysed by integrated diagnostics of the plasma parameters which are closely associated with the process parameters and other external process conditions. This paper reviews the background of thin film nucleation and growth, the status of magnetron sputtering technology and the progress of plasma diagnostics for plasma processing. The evolution of the microstructure during magnetron sputtering is then discussed with respect to the change in the process variables in terms of the plasma parameters along with empirical data of the integrated plasma diagnostics for various magnetron sputtering conditions with conventional dc, pulsed dc and high power pulsed dc sputtering modes. Among the major energy terms to be discussed are the temperature change in the top surface region and the energies of ions and neutral species. (topical review)

  10. Growth, characterization and properties of CVD diamond films for applications as radiation detectors

    International Nuclear Information System (INIS)

    Sciorti, S.

    1999-01-01

    The aim of the work is to give a picture of the current state of the art of CVD (chemical vapour deposition) diamond. The interest is due to the capability to grow over large areas a material with physical properties suitable for an impressive number of applications. The authors focuses on the potential of diamond as a radiation detector and gets into details of the huge field that extends from the thermochemistry of the deposition process to the test of a diamond-based tracker with a fast readout electronics

  11. Influence of pulsed plasma streams processing on wear behavior of steels in different friction conditions

    International Nuclear Information System (INIS)

    Bandura, A.N.; Byrka, O.V.; Tereshin, V.I.; Bovda, A.M.; Tortika, A.S.

    2000-01-01

    Pulsed plasma streams processing was applied for surface modification of industrial steel samples. Different types of wear tests (pin-on-disk,flat-on-flat, abrasive,cavitation) were carried out for samples irradiated by pulsed nitrogen plasma streams. There was achieved essential decrease of wear and tear of processed surfaces of all kinds of steels including previously thermally quenched ones. Obtained results are of importance for both determination of optimal regimes of plasma streams processing and the most resulting use of pulsed plasma streams for technology purpose, i.e. for identification of wear modes and optimal friction conditions for steels processed by plasma streams

  12. Numerical simulation of plasma processes driven by transverse ion heating

    Science.gov (United States)

    Singh, Nagendra; Chan, C. B.

    1993-01-01

    The plasma processes driven by transverse ion heating in a diverging flux tube are investigated with numerical simulation. The heating is found to drive a host of plasma processes, in addition to the well-known phenomenon of ion conics. The downward electric field near the reverse shock generates a doublestreaming situation consisting of two upflowing ion populations with different average flow velocities. The electric field in the reverse shock region is modulated by the ion-ion instability driven by the multistreaming ions. The oscillating fields in this region have the possibility of heating electrons. These results from the simulations are compared with results from a previous study based on a hydrodynamical model. Effects of spatial resolutions provided by simulations on the evolution of the plasma are discussed.

  13. Plasma CXCL10, sCD163 and sCD14 Levels Have Distinct Associations with Antiretroviral Treatment and Cardiovascular Disease Risk Factors.

    Directory of Open Access Journals (Sweden)

    Alison Castley

    Full Text Available We investigate the associations of three established plasma biomarkers in the context of HIV and treatment-related variables including a comprehensive cardiovascular disease risk assessment, within a large ambulatory HIV cohort. Patients were recruited in 2010 to form the Royal Perth Hospital HIV/CVD risk cohort. Plasma sCD14, sCD163 and CXCL10 levels were measured in 475 consecutive patients with documented CVD risk (age, ethnicity, gender, smoking, blood pressure, BMI, fasting metabolic profile and HIV treatment history including immunological/virological outcomes. The biomarkers assessed showed distinct associations with virological response: CXCL10 strongly correlated with HIV-1 RNA (p0.2. Associations between higher sCD163 and protease inhibitor therapy (p = 0.05 and lower sCD14 with integrase inhibitor therapy (p = 0.02 were observed. Levels of sCD163 were also associated with CVD risk factors (age, ethnicity, HDL, BMI, with a favourable influence of Framingham score <10% (p = 0.04. Soluble CD14 levels were higher among smokers (p = 0.002, with no effect of other CVD risk factors, except age (p = 0.045. Our findings confirm CXCL10, sCD163 and sCD14 have distinct associations with different aspects of HIV infection and treatment. Levels of CXCL10 correlated with routinely monitored variables, sCD163 levels reflect a deeper level of virological suppression and influence of CVD risk factors, while sCD14 levels were not associated with routinely monitored variables, with evidence of specific effects of smoking and integrase inhibitor therapy warranting further investigation.

  14. Plasma CXCL10, sCD163 and sCD14 Levels Have Distinct Associations with Antiretroviral Treatment and Cardiovascular Disease Risk Factors

    Science.gov (United States)

    Castley, Alison; Williams, Leah; James, Ian; Guelfi, George; Berry, Cassandra; Nolan, David

    2016-01-01

    We investigate the associations of three established plasma biomarkers in the context of HIV and treatment-related variables including a comprehensive cardiovascular disease risk assessment, within a large ambulatory HIV cohort. Patients were recruited in 2010 to form the Royal Perth Hospital HIV/CVD risk cohort. Plasma sCD14, sCD163 and CXCL10 levels were measured in 475 consecutive patients with documented CVD risk (age, ethnicity, gender, smoking, blood pressure, BMI, fasting metabolic profile) and HIV treatment history including immunological/virological outcomes. The biomarkers assessed showed distinct associations with virological response: CXCL10 strongly correlated with HIV-1 RNA (p0.2). Associations between higher sCD163 and protease inhibitor therapy (p = 0.05) and lower sCD14 with integrase inhibitor therapy (p = 0.02) were observed. Levels of sCD163 were also associated with CVD risk factors (age, ethnicity, HDL, BMI), with a favourable influence of Framingham score <10% (p = 0.04). Soluble CD14 levels were higher among smokers (p = 0.002), with no effect of other CVD risk factors, except age (p = 0.045). Our findings confirm CXCL10, sCD163 and sCD14 have distinct associations with different aspects of HIV infection and treatment. Levels of CXCL10 correlated with routinely monitored variables, sCD163 levels reflect a deeper level of virological suppression and influence of CVD risk factors, while sCD14 levels were not associated with routinely monitored variables, with evidence of specific effects of smoking and integrase inhibitor therapy warranting further investigation. PMID:27355513

  15. Comparison endpoint study of process plasma and secondary electron beam exciter optical emission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Stephan Thamban, P. L.; Yun, Stuart; Padron-Wells, Gabriel; Hosch, Jimmy W.; Goeckner, Matthew J. [Department of Mechanical Engineering, University of Texas at Dallas, 800W Campbell Road, Richardson, Texas 75080 (United States); Department of Electrical Engineering, University of Texas at Dallas, 800W Campbell Road, Richardson, Texas 75080 (United States); Verity Instruments, Inc., 2901 Eisenhower Street, Carrollton, Texas 75007 (United States); Department of Mathematical Sciences, University of Texas at Dallas, 800 W Campbell Road, Richardson, Texas 75080 (United States)

    2012-11-15

    Traditionally process plasmas are often studied and monitored by optical emission spectroscopy. Here, the authors compare experimental measurements from a secondary electron beam excitation and direct process plasma excitation to discuss and illustrate its distinctiveness in the study of process plasmas. They present results that show excitations of etch process effluents in a SF{sub 6} discharge and endpoint detection capabilities in dark plasma process conditions. In SF{sub 6} discharges, a band around 300 nm, not visible in process emission, is observed and it can serve as a good indicator of etch product emission during polysilicon etches. Based on prior work reported in literature the authors believe this band is due to SiF{sub 4} gas phase species.

  16. Plasma gasification process: Modeling, simulation and comparison with conventional air gasification

    International Nuclear Information System (INIS)

    Janajreh, Isam; Raza, Syed Shabbar; Valmundsson, Arnar Snaer

    2013-01-01

    Highlights: ► Plasma/conventional gasification are modeled via Gibbs energy minimization. ► The model is applied to wide range of feedstock, tire, biomass, coal, oil shale. ► Plasma gasification show high efficiency for tire waste and coal. ► Efficiency is around 42% for plasma and 72% for conventional gasification. ► Lower plasma gasification efficiency justifies hazardous waste energy recovery. - Abstract: In this study, two methods of gasification are developed for the gasification of various feedstock, these are plasma gasification and conventional air gasification. The two methods are based on non-stoichiometric Gibbs energy minimization approach. The model takes into account the different type of feedstocks, which are analyzed at waste to energy lab at Masdar Institute, oxidizer used along with the plasma energy input and accurately evaluates the syngas composition. The developed model is applied for several types of feedstock, i.e. waste tire material, coal, plywood, pine needles, oil shale, and municipal solid waste (MSW), algae, treated/untreated wood, instigating air/steam as the plasma gas and only air as oxidizer for conventional gasification. The results of plasma gasification and conventional air gasification are calculated on the bases of product gas composition and the process efficiency. Results of plasma gasification shows that high gasification efficiency is achievable using both tire waste material and coal, also, the second law efficiency is calculated for plasma gasification that shows a relative high efficiency for tire and coal as compare to other feedstock. The average process efficiency for plasma gasification is calculated to be around 42%. On other hand the result of conventional gasification shows an average efficiency of 72%. The low efficiency of plasma gasification suggest that if only the disposal of hazard waste material is considered then plasma gasification can be a viable option to recover energy.

  17. Atomic processes relevant to polarization plasma spectroscopy

    International Nuclear Information System (INIS)

    Fujimoto, T.; Koike, F.; Sakimoto, K.; Okasaka, R.; Kawasaki, K.; Takiyama, K.; Oda, T.; Kato, T.

    1992-04-01

    When atoms (ions) are excited anisotropically, polarized excited atoms are produced and the radiation emitted by these atoms is polarized. From the standpoint of plasma spectroscopy research, we review the existing data for various atomic processes that are related to the polarization phenomena. These processes are: electron impact excitation, excitation by atomic and ionic collisions, photoexcitation, radiative recombination and bremsstrahlung. Collisional and radiative relaxation processes of atomic polarization follow. Other topics included are: electric-field measurement, self alignment, Lyman doublet intensity ratio, and magnetic-field measurement of the solar prominence. (author)

  18. Correlates of CVD and discussing sexual issues with physicians among male military veterans.

    Science.gov (United States)

    Smith, Matthew Lee; Goltz, Heather Honoré; Motlagh, Audry S; Ahn, SangNam; Bergeron, Caroline D; Ory, Marcia G

    2016-10-01

    This study aims to identify socio-demographic and health behavior factors associated with cardiovascular disease (CVD) diagnosis and patient-physician communication concerning sexual issues among older Veterans. Cross-sectional data were collected from 635 male Veterans over age 55 years as part of the 2010 National Social Life, Health and Aging Project, a nationally-representative, population-based study of community-dwelling older Americans. Two independent logistic regression analyses were performed. Over 33% of Veterans were aged 75 years or older. Over one-half of participants reported having a CVD diagnosis (58%) and sexual intercourse within the previous year (58%); over one-third (37%) reported having one or more sexual dysfunctions and discussing sexual issues with their physician (42%). Veterans diagnosed with CVD were significantly more likely to self-identify as racial/ethnic minorities (OR=1.89, P=0.021), have more chronic disease comorbidities (OR=1.23, P=0.041), and have more sexual dysfunctions (OR=1.19, P=0.028). Veterans diagnosed with CVD were significantly less likely to report having sex within the previous year (OR=0.53, P=0.005). Veterans who reported discussing sexual issues with a physician were significantly more likely to be ≥75 years (OR=1.79, P=0.010), and report more than a high school education (OR=1.62, P=0.016), CVD diagnosis (OR=1.59, P=0.015), sex within the previous year (OR=1.69, P=0.033), and trouble achieving/maintaining an erection (OR=3.39, Paging and sexual health/counseling services. These services should promote increased patient-physician communication as well as referrals between physicians and sex health/counseling specialists. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

  19. Surface modification of pitch-based spherical activated carbon by CVD of NH{sub 3} to improve its adsorption to uric acid

    Energy Technology Data Exchange (ETDEWEB)

    Liu Chaojun [State Key Laboratory of Chemical Engineering, East China University of Science and Technology (ECUST), Shanghai 200237 (China); Liang Xiaoyi [State Key Laboratory of Chemical Engineering, East China University of Science and Technology (ECUST), Shanghai 200237 (China)], E-mail: xyliang@ecust.edu.cn; Liu Xiaojun; Wang Qin; Zhan Liang; Zhang Rui; Qiao Wenming; Ling Licheng [State Key Laboratory of Chemical Engineering, East China University of Science and Technology (ECUST), Shanghai 200237 (China)

    2008-08-30

    Surface chemistry of pitch-based spherical activated carbon (PSAC) was modified by chemical vapor deposition of NH{sub 3} (NH{sub 3}-CVD) to improve the adsorption properties of uric acid. The texture and surface chemistry of PSAC were studied by N{sub 2} adsorption, pH{sub PZC} (point of zero charge), acid-base titration and X-ray photoelectron spectroscopy (XPS). NH{sub 3}-CVD has a limited effect on carbon textural characteristics but it significantly changed the surface chemical properties, resulting in positive effects on uric acid adsorption. After modification by NH{sub 3}-CVD, large numbers of nitrogen-containing groups (especially valley-N and center-N) are introduced on the surface of PSAC, which is responsible for the increase of pH{sub PZC}, surface basicity and uric acid adsorption capacity. Pseudo-second-order kinetic model can be used to describe the dynamic adsorption of uric acid on PSAC, and the thermodynamic parameters show that the adsorption of uric acid on PSAC is spontaneous, endothermic and irreversible process in nature.

  20. Effect of non-surgical periodontal therapy on plasma homocysteine levels in Indian population with chronic periodontitis: a pilot study.

    Science.gov (United States)

    Bhardwaj, Smiti; Prabhuji, M L Venkatesh; Karthikeyan, Bangalore Vardhan

    2015-03-01

    Homocysteine (Hcy) is implicated in the development of cardiovascular diseases (CVD). The effect of periodontal disease and periodontal therapy on plasma Hcy remains controversial. Hence, in this pilot study we assessed the effect of periodontal disease and non-surgical periodontal therapy (NSPT) on plasma Hcy in systemically healthy Indian subjects. Forty participants (30 to 39 years) were enrolled in the study and were divided into two groups based on gingival index, probing depth, and clinical attachment level (CAL): Healthy (control group; n = 20) and Chronic Periodontitis (test group; n = 20). Plasma samples were collected and quantified at baseline and 12 weeks after scaling and root planing (SRP) for Hcy using High Performance Liquid Chromatography with fluorescent detection (HPLC-fld). Plasma Hcy levels of chronic periodontitis (17.87 ± 1.21 μmol/l) subjects was significantly higher than healthy subjects (9.09 ± 2.11 μmol/l). Post-therapy, the plasma Hcy concentration reduced significantly (11.34 ± 1.87 μmol/l) (p periodontal inflammation and therapy, respectively, indicate a direct relationship of Hcy with chronic periodontitis. NSPT may be employed as an adjunctive Hcy Lowering Therapy, contributing towards primary prevention against CVD's. © 2015 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  1. Plasma processing of soft materials for development of flexible devices

    International Nuclear Information System (INIS)

    Setsuhara, Yuichi; Cho, Ken; Takenaka, Kosuke; Shiratani, Masaharu; Sekine, Makoto; Hori, Masaru

    2011-01-01

    Plasma-polymer interactions have been studied as a basis for development of next-generation processing of flexible devices with soft materials by means of low-damage plasma technologies (soft materials processing technologies). In the present article, interactions between argon plasmas and polyethylene terephthalate (PET) films have been examined for investigations of physical damages induced by plasma exposures to the organic material via chemical bonding-structure analyses using hard X-ray photoelectron spectroscopy (HXPES) together with conventional X-ray photoelectron spectroscopy (XPS). The PET film has been selected as a test material for investigations in the present study not merely because of its specific applications, such as a substrate material, but because PET is one of the well defined organic materials containing major components in a variety of functional soft materials; C-C main chain, CH bond, oxygen functionalities (O=C-O bond and C-O bond) and phenyl group. Especially, variations of the phenyl group due to argon plasma exposures have been investigated in the present article in order to examine plasma interactions with π-conjugated system, which is in charge of electronic functions in many of the π-conjugated electronic organic materials to be utilized as functional layer for advanced flexible device formations. The PET films have been exposed to argon plasmas sustained via inductive coupling of RF power with low-inductance antenna modules. The HXPES analyses exhibited that the degradations of the oxygen functionalities and the phenyl group in the deeper regions up to 50 nm from the surface of the samples were insignificant indicating that the bond scission and/or the degradations of the chemical bonding structures due to photoirradiation from the plasma and/or surface heating via plasma exposure were relatively insignificant as compared with damages in the vicinity of the surface layers.

  2. Coated particle waste form development

    International Nuclear Information System (INIS)

    Oma, K.H.; Buckwalter, C.Q.; Chick, L.A.

    1981-12-01

    Coated particle waste forms have been developed as part of the multibarrier concept at Pacific Northwest Laboratory under the Alternative Waste Forms Program for the Department of Energy. Primary efforts were to coat simulated nuclear waste glass marbles and ceramic pellets with low-temperature pyrolytic carbon (LT-PyC) coatings via the process of chemical vapor deposition (CVD). Fluidized bed (FB) coaters, screw agitated coaters (SAC), and rotating tube coaters were used. Coating temperatures were reduced by using catalysts and plasma activation. In general, the LT-PyC coatings did not provide the expected high leach resistance as previously measured for carbon alone. The coatings were friable and often spalled off the substrate. A totally different concept, thermal spray coating, was investigated at PNL as an alternative to CVD coating. Flame spray, wire gun, and plasma gun systems were evaluated using glass, ceramic, and metallic coating materials. Metal plasma spray coatings (Al, Sn, Zn, Pb) provided a two to three orders-of-magnitude increase in chemical durability. Because the aluminum coatings were porous, the superior leach resistance must be due to either a chemical interaction or to a pH buffer effect. Because they are complex, coated waste form processes rank low in process feasibility. Of all the possible coated particle processes, plasma sprayed marbles have the best rating. Carbon coating of pellets by CVD ranked ninth when compared with ten other processes. The plasma-spray-coated marble process ranked sixth out of eleven processes

  3. Endogenous magnetic reconnection and associated high energy plasma processes

    Science.gov (United States)

    Coppi, B.; Basu, B.

    2018-02-01

    An endogenous reconnection process involves a driving factor that lays inside the layer where a drastic change of magnetic field topology occurs. A process of this kind is shown to take place when an electron temperature gradient is present in a magnetically confined plasma and the evolving electron temperature fluctuations are anisotropic. The width of the reconnecting layer remains significant even when large macroscopic distances are considered. In view of the fact that there are plasmas in the Universe with considerable electron thermal energy contents this feature can be relied upon in order to produce generation or conversion of magnetic energy, high energy particle populations and momentum and angular momentum transport.

  4. Precision microwave applicators and systems for plasma and materials processing

    International Nuclear Information System (INIS)

    Asmussen, J.; Garard, R.

    1988-01-01

    Modern applications of microwave energy have imposed new requirements upon microwave processing systems. Interest in energy efficiency, processing uniformity and control of process cycles has placed new design conditions upon microwave power oscillators, microwave systems and microwave applicator design. One approach of meeting new application requirements is the use of single-mode or controlled multimode applicators. The use of a single-mode applicator for plasma generation and materials processing will be presented. Descriptions of actual applicator designs for heating, curing, and processing of solid materials and the generations of high and low pressure discharges will be given. The impact of these applicators on the total microwave system including the microwave power source will be described. Specific examples of applicator and associated microwave systems will be detailed for the applications of (1) plasma thin film deposition and (2) the precision processing and diagnosis of materials. Methods of process control and diagnosis, control of process uniformity and process scale up are discussed

  5. Pulse height distribution and radiation tolerance of CVD diamond detectors

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dangelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F. E-mail: f.hartjes@nikhef.nl; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; D.Tromson,; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Zoeller, M.; Fenyvesi, A.; Molnar, J.; Sohler, D

    2000-06-01

    The paper reviews measurements of the radiation tolerance of CVD diamond for irradiation with 24 GeV/c protons, 300 MeV/c pions and 1 MeV neutrons. For proton and neutron irradiation, the measured charge signal spectrum is compared with the spectrum calculated by a model. Irradiation by particles causes radiation damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model shows that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. In addition, we observed after proton irradiation at the charge signal spectrum a decrease of the number of small signals. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal.

  6. Pulse height distribution and radiation tolerance of CVD diamond detectors

    International Nuclear Information System (INIS)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dangelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; D.Tromson,; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Zoeller, M.; Fenyvesi, A.; Molnar, J.; Sohler, D.

    2000-01-01

    The paper reviews measurements of the radiation tolerance of CVD diamond for irradiation with 24 GeV/c protons, 300 MeV/c pions and 1 MeV neutrons. For proton and neutron irradiation, the measured charge signal spectrum is compared with the spectrum calculated by a model. Irradiation by particles causes radiation damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model shows that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. In addition, we observed after proton irradiation at the charge signal spectrum a decrease of the number of small signals. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal

  7. Applicability of the Existing CVD Risk Assessment Tools to Type II Diabetics in Oman: A Review

    Directory of Open Access Journals (Sweden)

    Abdulhakeem Al-Rawahi

    2015-09-01

    Full Text Available Patients with type II diabetes (T2DM have an elevated risk for cardiovascular disease (CVD, and it is considered to be a leading cause of morbidity and premature mortality in these patients. Many traditional risk factors such as age, male sex, hypertension, dyslipidemia, glycemic control, diabetes duration, renal dysfunction, obesity, and smoking have been studied and identified as independent factors for CVD. Quantifying the risk of CVD among diabetics using the common risk factors in order to plan the treatment and preventive measures is important in the management of these patients as recommended by many clinical guidelines. Therefore, several risk assessment tools have been developed in different parts of the world for this purpose. These include the tools that have been developed for general populations and considered T2DM as a risk factor, and the tools that have been developed for T2DM populations specifically. However, due to the differences in sociodemographic factors and lifestyle patterns, as well as the differences in the distribution of various CVD risk factors in different diabetic populations, the external applicability of these tools on different populations is questionable. This review aims to address the applicability of the existing CVD risk models to the Omani diabetic population.

  8. Association of metabolic and genetic factors with cholesterol esterification rate in HDL plasma and atherogenic index of plasma in a 40 years old Slovak population

    Czech Academy of Sciences Publication Activity Database

    Rašlová, K.; Dobiášová, Milada; Hubáček, J. A.; Bencová, D.; Siváková, D.; Danková, Z.; Franeková, J.; Jabor, A.; Gašparovič, J.; Vohnout, B.

    2011-01-01

    Roč. 60, č. 5 (2011), s. 758-795 ISSN 0862-8408 R&D Projects: GA MZd(CZ) NR8328; GA MŠk(CZ) 1M0510 Institutional research plan: CEZ:AV0Z50110509 Keywords : fractional esterification rate of cholesterol (FERHDL) * atherogenic index of plasma (AIP) * biomarkers of CVD * CILP2 * FTO * MLXIPL Subject RIV: EB - Genetics ; Molecular Biology Impact factor: 1.555, year: 2011

  9. Characterization of surface hardening in a nitrated chromium steel by microwave plasma type ECR (Electron Cyclotron Resonance)

    International Nuclear Information System (INIS)

    La O C, G. de.

    1995-01-01

    With this work it is demonstrated the possibility of performing the nitriding process by using a CVD-ECR source, based on the results obtained after treating several samples of AISI H-12 steel. Also, the main operating parameters (time of treatment, sample temperatures and gas mixture) are determined during nitriding of this steel with the mentioned source. Samples used before nitriding were quenched and tempered at 580 Centigrade degrees. Several experiments were done by using a pure nitrogen plasma with exposure times of the samples of 20 minutes at temperatures from 450 to 550 Centigrade degrees, and by using a N 2 - H 2 plasma with exposure times of the samples of 20, 30 and 40 minutes at temperatures from 350 to 550 Centigrade degrees. Metallography, microhardness, EDS and Auger analysis were done to observe changes suffered for the samples after treatment. (Author)

  10. Effects of background neutral particles on a field-reversed configuration plasma in the translation process

    International Nuclear Information System (INIS)

    Matsuzawa, Yoshiki; Asai, Tomohiko; Takahashi, Tsutomu; Takahashi, Toshiki

    2008-01-01

    A field-reversed configuration (FRC) plasma was translated into a weakly ionized plasma and the effects of heating and particle buildup of the FRC plasma due to the background neutral particles and plasma injection in the translation process were investigated. Improvement of the particle and poloidal flux confinements and delay of onset of n=2 rotational instability were observed in the translation process. It was found that the internal structure of the plasma pressure (plasma temperature and density) at the separatrix and field null was deformed by the particle injection. FRC plasma translation through the background particles was equivalent to an end-on particle beam injection to the FRC plasma. Particles and energy were supplied during the translation. The results obtained for the phenomena of particle supply and plasma heating were also supported by the results of two-dimensional particle simulation. The effects of background particle injection appear to be a promising process for the regeneration of translation kinetic energy to plasma internal energy

  11. Comparison study of nitrogen and argon processing in a plasma arc centrifugal treatment system

    International Nuclear Information System (INIS)

    Shuey, M.; Tsuji, Y.

    2000-01-01

    Recent testing performed at the plasma research center of Retech Services, Inc. compared nitrogen with argon as plasma gas in the processing of simulated wastes. The testing took place in a full-scale production PACT system under a cooperative research and development study between Retech Services Inc. and Toyo Engineering Corporation. This study shows that simulated waste can be processed by both nitrogen and argon plasmas. Heat losses to the torch nozzle were significantly lower with argon and should be studied further. Both argon and nitrogen plasma were able to process feeds containing both metals and oxides. Some of the drawbacks to using argon plasma are cost, higher volume flow rates, and dual mode torch nozzle erosion. (authors)

  12. Plasma nitrocarburizing process - a solution to improve wear and corrosion resistance

    International Nuclear Information System (INIS)

    Joseph, Alphonsa J.; Ghanshyam, J.; Mukherjee, S.

    2015-01-01

    To prevent wear and corrosion problems in steam turbines, coatings have proved to have an advantage of isolating the component substrate from the corrosive environment with minimal changes in turbine material and design. Diffusion based coatings like plasma nitriding and plasma nitrocarburizing have been used for improving the wear and corrosion resistance of components undergoing wear during their operation. In this study plasma nitrocarburizing process was carried out on ferritic alloys like ASTM A182 Grade F22 and ATM A105 alloy steels and austenitic stainless steels like AISI 304 and AISI 316 which are used to make trim parts of control valves used for high pressure and high temperature steam lines to enhance their wear and corrosion resistance properties. The corrosion rate was measured by a potentiodynamic set up and salt spray unit in two different environments viz., tap water and 5% NaCl solutions. The Tafel plots of ferritic alloys and austenitic stainless steels show that plasma nitrocarburizing process show better corrosion resistance compared to that of the untreated steel. It was found that after plasma nitrocarburizing process the hardness of the alloy steels increased by a factor of two. The corrosion resistance of all the steels mentioned above improved in comparison to the untreated steels. This improvement can be attributed to the nitrogen and carbon incorporation in the surface of the material. This process can be also applied to components used in nuclear industries to cater to the wear and corrosion problems. (author)

  13. Deposição por plasma com arco transferido Hardfacing by plasma transfer arc process

    Directory of Open Access Journals (Sweden)

    Víctor Vergara Díaz

    2010-03-01

    Full Text Available Em virtude do Processo de Soldagem Plasma com Alimentação de Pó ter similaridades com o Processo de Soldagem Plasma com Alimentação de Arame, foi realizado um estudo comparativo entre ambos os processos utilizando-se a liga a base de cobalto comercialmente conhecida como Stellite 6, como material de adição na forma de pó e arame. A pesquisa foi realizada com a expectativa de ser aplicada nas operações de revestimentos de superfícies, em especial em pás de turbinas hidráulicas desgastadas por cavitação. A seleção do material de adição a ser empregado depende da natureza do mecanismo de desgaste encontrado. No Labsolda, a liga Stellite 6 vem sendo uma das mais utilizadas, por apresentar uma excelente resistência ao desgaste erosivo por cavitação. Foi avaliada a influência da vazão de gás de plasma a partir dos valores de diluição, dimensões do cordão, dureza e microestrutura. O Processo de Soldagem Plasma com Alimentação de Pó foi o que produziu o melhor acabamento superficial, menor diluição, melhor molhamento e maior largura. Com isto abre-se uma nova perspectiva para revestimentos metálicos e neste contexto se insere a recuperação por soldagem de partes erodidas de turbinas hidráulicas.The Plasma powder transferred arc welding process, which uses feed stock in the powder form, has similarities with Plasma wire transferred arc welding. This work describes a comparative study of the two processes using a Cobalt-based alloy commercially known as Stellite 6. This Co-based alloy is recognized for its superior cavitation erosion resistance. The aim of this work is to investigate the potential of PTA coatings for the protection and refurbishiment hydraulic turbine blades. Coatings were evaluated for the influence of Plasma gas flow rate on coating dilution, geometry, hardness and microstructure. Coatings processed with the atomized Stellite 6 powder feestock showed a superior surface quality, lower dilution

  14. Generation of Suprathermal Electrons by Collective Processes in Collisional Plasma

    Science.gov (United States)

    Tigik, S. F.; Ziebell, L. F.; Yoon, P. H.

    2017-11-01

    The ubiquity of high-energy tails in the charged particle velocity distribution functions (VDFs) observed in space plasmas suggests the existence of an underlying process responsible for taking a fraction of the charged particle population out of thermal equilibrium and redistributing it to suprathermal velocity and energy ranges. The present Letter focuses on a new and fundamental physical explanation for the origin of suprathermal electron velocity distribution function (EVDF) in a collisional plasma. This process involves a newly discovered electrostatic bremsstrahlung (EB) emission that is effective in a plasma in which binary collisions are present. The steady-state EVDF dictated by such a process corresponds to a Maxwellian core plus a quasi-inverse power-law tail, which is a feature commonly observed in many space plasma environments. In order to demonstrate this, the system of self-consistent particle- and wave-kinetic equations are numerically solved with an initially Maxwellian EVDF and Langmuir wave spectral intensity, which is a state that does not reflect the presence of EB process, and hence not in force balance. The EB term subsequently drives the system to a new force-balanced steady state. After a long integration period it is demonstrated that the initial Langmuir fluctuation spectrum is modified, which in turn distorts the initial Maxwellian EVDF into a VDF that resembles the said core-suprathermal VDF. Such a mechanism may thus be operative at the coronal source region, which is characterized by high collisionality.

  15. Diagramas de fase CVD para la preparación de películas de iridio

    Directory of Open Access Journals (Sweden)

    Hernández-Pérez, M. A.

    2002-02-01

    Full Text Available Chemical vapor deposition (CVD phase diagrams for the preparation of iridium films were calculated using Gibbs free energy minimization method. Iridium acetylacetonate (Ir(acac3 was used as the precursor compound. Two gaseous mixtures were analyzed: Ir(acac3-O2-Ar and Ir(acac3-Ar. The deposition temperatures were explored from 300 to 800 °C, total pressures from 13.3 to 13.332 Pa and partial pressures of Ir(acac3 gas and O2 gas from 0.001 to 1.000 Pa. The Ir-CVD diagrams predicted that without Oj gas in the gaseous mixture, the solid films consist of two solid phases: Ir+C. In contrast, with addition of O2 to the gaseous mixture, the Ir-CVD diagrams revealed different domains of condensed phases which include IrO2, IrO2+Ir, Ir and Ir+C. These diagrams allow one to establish the total pressures and temperatures required to obtain a given film composition. The results predicted by the Ir-CVD diagrams are in good agreement with those experimentally obtained.

    Se calcularon los diagramas de fase CVD (Chemical Vapor Deposition para la preparación de películas de iridio empleando el método de minimización de la energía libre de Gibbs. Como precursor se utilizó acetilacetonato de iridio (Ir(acac3. Se analizaron las mezclas gaseosas Ir(acac3-O2Ar e Ir(acac3-Ar. Las temperaturas de depósito se exploraron desde 300 hasta 800 °C, las presiones totales de 13,3 a 13.332 Pa y las presiones parciales de los gases Ir(acac3 y O2 desde 0,001 hasta 1.000 Pa. Los diagramas Ir-CVD predicen que sin O2 en la mezcla gaseosa, las películas constan de las fases sólidas Ir+C. En contraste, con adición de O2 los diagramas Ir-CVD revelan diferentes dominios de fases sólidas que incluyen IrO2, IrO2+Ir, Ir e Ir+C. Estos diagramas permiten establ