Three-dimensional mesoscale heterostructures of ZnO nanowire arrays epitaxially grown on CuGaO2 nanoplates as individual diodes.

Science.gov (United States)

Forticaux, Audrey; Hacialioglu, Salih; DeGrave, John P; Dziedzic, Rafal; Jin, Song

2013-09-24

We report a three-dimensional (3D) mesoscale heterostructure composed of one-dimensional (1D) nanowire (NW) arrays epitaxially grown on two-dimensional (2D) nanoplates. Specifically, three facile syntheses are developed to assemble vertical ZnO NWs on CuGaO2 (CGO) nanoplates in mild aqueous solution conditions. The key to the successful 3D mesoscale integration is the preferential nucleation and heteroepitaxial growth of ZnO NWs on the CGO nanoplates. Using transmission electron microscopy, heteroepitaxy was found between the basal planes of CGO nanoplates and ZnO NWs, which are their respective (001) crystallographic planes, by the observation of a hexagonal Moiré fringes pattern resulting from the slight mismatch between the c planes of ZnO and CGO. Careful analysis shows that this pattern can be described by a hexagonal supercell with a lattice parameter of almost exactly 11 and 12 times the a lattice constants for ZnO and CGO, respectively. The electrical properties of the individual CGO-ZnO mesoscale heterostructures were measured using a current-sensing atomic force microscopy setup to confirm the rectifying p-n diode behavior expected from the band alignment of p-type CGO and n-type ZnO wide band gap semiconductors. These 3D mesoscale heterostructures represent a new motif in nanoassembly for the integration of nanomaterials into functional devices with potential applications in electronics, photonics, and energy.

Electronic structure of GaAs with InAs (001) monolayer

International Nuclear Information System (INIS)

Tit, N.; Peressi, M.

1995-04-01

The effect on the electronic structure of an InAs monomolecular plane inserted in bulk GaAs is investigated theoretically. The (InAs) 1 (GaAs) n (001) strained superlattice is studied via ab-initio self-consistent pseudopotential calculations. Both electrons and holes are localized nearby the inserted InAs monolayer, which therefore acts as a quantum well for all the charge carriers. The small thickness of the inserted InAs slab is responsible of high confinement energies for the charge carriers, and therefore the interband electron-heavy-hole transition energy is close to the energy gap of the bulk GaAs, in agreement with recent experimental data. (author). 18 refs, 4 figs

Investigating dynamic characteristics of porous double-layered FG nanoplates in elastic medium via generalized nonlocal strain gradient elasticity

Science.gov (United States)

Reza Barati, Mohammad

2017-09-01

For the first time, a vibrating porous double-nanoplate system under in-plane periodic loads is modeled via the generalized nonlocal strain gradient theory (NSGT). Based on the proposed theory, one can examine both stiffness-softening and stiffness-hardening effects for a more accurate analysis of nanoplates. Nanopores or nanovoids are incorporated to the model based on a modified rule of mixture. Modeling of porous double-layered nanoplate is conducted according to a refined four-variable plate theory with fewer field variables than first-order plate theory. The governing equations and related classical and nonclassical boundary conditions are derived based on Hamilton's principle. These equations are solved for hinged nanoplates via Galerkin's method. It is shown that porosities, nonlocal parameter, strain gradient parameter, material gradation, interlayer stiffness, elastic foundation, side-to-thickness and aspect ratios have a notable impact on the vibration behavior of nanoporous materials.

Current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization

International Nuclear Information System (INIS)

Stoyanov, D G

2007-01-01

The balances of particles and charges in the volume of parallel-plane ionization chamber are considered. Differential equations describing the distribution of current densities in the chamber volume are obtained. As a result of the differential equations solution an analytical form of the current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization in the volume is obtained

Current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization

Energy Technology Data Exchange (ETDEWEB)

Stoyanov, D G [Faculty of Engineering and Pedagogy in Sliven, Technical University of Sofia, 59, Bourgasko Shaussee Blvd, 8800 Sliven (Bulgaria)

2007-08-15

The balances of particles and charges in the volume of parallel-plane ionization chamber are considered. Differential equations describing the distribution of current densities in the chamber volume are obtained. As a result of the differential equations solution an analytical form of the current-voltage characteristic of parallel-plane ionization chamber with inhomogeneous ionization in the volume is obtained.

A parallel orbital-updating based plane-wave basis method for electronic structure calculations

International Nuclear Information System (INIS)

Pan, Yan; Dai, Xiaoying; Gironcoli, Stefano de; Gong, Xin-Gao; Rignanese, Gian-Marco; Zhou, Aihui

2017-01-01

Highlights: • Propose three parallel orbital-updating based plane-wave basis methods for electronic structure calculations. • These new methods can avoid the generating of large scale eigenvalue problems and then reduce the computational cost. • These new methods allow for two-level parallelization which is particularly interesting for large scale parallelization. • Numerical experiments show that these new methods are reliable and efficient for large scale calculations on modern supercomputers. - Abstract: Motivated by the recently proposed parallel orbital-updating approach in real space method , we propose a parallel orbital-updating based plane-wave basis method for electronic structure calculations, for solving the corresponding eigenvalue problems. In addition, we propose two new modified parallel orbital-updating methods. Compared to the traditional plane-wave methods, our methods allow for two-level parallelization, which is particularly interesting for large scale parallelization. Numerical experiments show that these new methods are more reliable and efficient for large scale calculations on modern supercomputers.

Silver nanoplates with ground or metastable structures obtained from template-free two-phase aqueous/organic synthesis

Energy Technology Data Exchange (ETDEWEB)

Zhelev, Doncho V., E-mail: dontcho.jelev@nih.gov; Zheleva, Tsvetanka S. [Army Research Laboratory, 2800 Adelphi, Maryland 20783 (United States)

2014-01-28

Silver has unique electrical, catalytic, and plasmonic characteristics and has been widely sought for fabrication of nanostructures. The properties of silver nanostructures are intimately coupled to the structure of silver crystals. Two crystal structures are known for silver: the stable (ground) state cubic face centered 3C-Ag structure and the metastable hexagonal 4H-Ag structure. Recently, Chackraborty et al. [J. Phys.: Condens. Matter 23, 325401 (2011)] discovered a low density, highly reactive metastable hexagonal 2H-Ag structure accessible during electrodeposition of silver nanowires in porous anodic alumina templates. This 2H-Ag structure has enhanced electrical and catalytic characteristics. In the present work we report template-free synthesis of silver nanoplates with the metastable 2H-Ag crystal structure, which appears together with the ground 3C-Ag and the metastable 4H-Ag structures in a two-phase solution synthesis with citric acid as the capping agent. The capacity of citric acid to stabilize both the stable and the metastable structures is explained by its preferential binding to the close packed facets of Ag crystals, which are the (111) planes for 3C-Ag and the (0001) planes for 4H-Ag and 2H-Ag. Nanoplate morphology and structure are characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. The synthesized nanoplates have thickness from 15 to 17 nm and edge length from 1 to 10 μm. Transmission electron microscopy selected area electron diffraction is used to uniquely identify and distinguish between nanoplates with 2H-Ag or 4H-Ag or 3C-Ag structures.

Compressive buckling of a rectangular nanoplate

Science.gov (United States)

Bochkarev, A. O.

2018-05-01

This paper considers the constitutive relations of the nanoplate theory with surface stresses taken into account according to the original or complete Gurtin-Murdoch (GM) model and according to the simplified strain-consistent GM model (which does not include any non-strain terms in the surface stress-strain relation). It is shown that the potential energy of a deformed nanoplate according to both GM models preserves the classical structure using the redefined elastic moduli (effective tangential and flexural elastic properties, which contain the characteristics of bulk phase and a surface). This allows to apply the known solutions and methods from macroplates to nanoplates. As example, it is shown that the critical load of the compressive buckling of a nanoplate according to the complete and strain-consistent GM models has the difference between two solutions no more than 1.5%.

Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

International Nuclear Information System (INIS)

Bierwagen, O.

2007-01-01

Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

Energy Technology Data Exchange (ETDEWEB)

Bierwagen, O.

2007-12-20

Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

Sorption of Triangular Silver Nanoplates on Polyurethane Foam

Science.gov (United States)

Furletov, A. A.; Apyari, V. V.; Garshev, A. V.; Volkov, P. A.; Tolmacheva, V. V.; Dmitrienko, S. G.

2018-02-01

The sorption of triangular silver nanoplates on polyurethane foam is investigated as a procedure for creating a nanocomposite sensing material for subsequent use in optical means of chemical analysis. Triangular silver nanoplates are synthesized and characterized, and a simple sorption technique for the formation of a composite material based on these nanoplates is proposed.

Facile synthesis and characterization of hexagonal NbSe2 nanoplates

International Nuclear Information System (INIS)

Zhang, Xianghua; Zhang, Du; Tang, Hua; Ji, Xiaorui; Zhang, Yi; Tang, Guogang; Li, Changsheng

2014-01-01

Graphical abstract: - Highlights: • Uniform hexagonal NbSe 2 nanoplates were prepared by a simple solid state reaction. • The possible formation mechanism of the NbSe 2 nanoplates was discussed. • The formation of NbSe 2 nanoplates undergoes a series of phase transition. - Abstract: The NbSe 2 nanoplates with hexagonal morphology have been successfully prepared by a facile, environmentally friendly reaction in closed reactor at moderate temperature. The thermal (750 °C) solid-state reaction between the ball-milled mixture of micro-sized Nb and Se yielded a high yield of NbSe 2 nanoplates. The as-prepared products were characterized by XRD, EDS, and SEM. The results showed that the as-prepared products were hexagonal phase NbSe 2 nanoplates with uniform sizes and the formation of NbSe 2 nanoplates underwent a series of phase transition. On the basis of experimental results obtained at different temperatures, a reasonable reaction process and a formation mechanism were proposed. Moreover, the ball milling time played a crucial role in acquiring the homogeneous distribution nanoplates

The influence of magnetic interactions and shape anisotropy on the alignment and assembly of BaFe{sub 12}O{sub 19} and Er{sub 2}O{sub 3} nanoplates

Energy Technology Data Exchange (ETDEWEB)

Lisjak, Darja, E-mail: darja.lisjak@ijs.si

2014-11-14

Magnetically anisotropic material with useful properties can be obtained when the barium ferrite (BaFe{sub 12}O{sub 19}) plates are aligned in a single plane. We studied the influence of the magnetic forces and the shape anisotropy on the alignment of barium ferrite nanoparticles. Nanoplates with diameters of 10–350 nm and diameter-to-thickness ratios of 3–30 were synthesized hydrothermally and stabilized in 1-butanol with dodecylbenzene sulphonic acid. The nanoplates were then deposited from the suspension on gold-coated substrates and dried with or without an applied magnetic field. In both cases the nanoplates aligned preferentially in the plane of the substrate, as evidenced by the scanning electron microscopy observations. To compare the influence of the magnetic field and the magnetic dipole–dipole interactions with that of the nanoparticle shape anisotropy, the alignment of paramagnetic erbium oxide (Er{sub 2}O{sub 3}) nanoplates was also studied. A lower degree of alignment was obtained with the erbium oxide than with the barium ferrite nanoplates. Barium ferrite films with a minimum orientation of 90% were prepared from the deposits after sintering at 1150 °C for 5 h. A comparable alignment of the erbium oxide films was induced hydrodynamically during the electrophoretic deposition. - Highlights: • Aligned deposits from BaFe{sub 12}O{sub 19} and Er{sub 2}O{sub 3} were prepared. • The magnetic interactions prevail over the shape anisotropy effect. • The alignment of the BaFe{sub 12}O{sub 19} nanoplates was obtained by drying a suspension. • The alignment of Er{sub 2}O{sub 3} nanoplates was obtained only by electrophoretic deposition.

Constraint-plane-based synthesis and topology variation of a class of metamorphic parallel mechanisms

International Nuclear Information System (INIS)

Gan, Dongming; Dias, Jorge; Seneviratne, Lakmal; Dai, Jian S.

2014-01-01

This paper investigates various topologies and mobility of a class of metamorphic parallel mechanisms synthesized with reconfigurable rTPS limbs. Based on the reconfigurable Hooke (rT) joint, the rTPS limb has two phases which result in parallel mechanisms having ability of mobility change. While in one phase the limb has no constraint to the platform, in the other it constrains the spherical joint center to lie on a plane which is used to demonstrate different topologies of the nrTPS metamorphic parallel mechanisms by investigating various relations (parallel or intersecting) among the n constraint planes (n = 2,3,..,6). Geometric constraint equations of the platform rotation matrix and translation vector are set up based on the point-plane constraint, which reveals mobility and redundant geometric conditions of the mechanism topologies. By altering the limbs into the non-constraint phase without constraint plane, new mechanism phases are deduced with mobility change based on each mechanism topology.

Transparency in stereopsis: parallel encoding of overlapping depth planes.

Science.gov (United States)

Reeves, Adam; Lynch, David

2017-08-01

We report that after extensive training, expert adults can accurately report the number, up to six, of transparent overlapping depth planes portrayed by brief (400 ms or 200 ms) random-element stereoscopic displays, and can well discriminate six from seven planes. Naïve subjects did poorly above three planes. Displays contained seven rows of 12 randomly located ×'s or +'s; jittering the disparities and number in each row to remove spurious cues had little effect on accuracy. Removing the central 3° of the 10° display to eliminate foveal vision hardly reduced the number of reportable planes. Experts could report how many of six planes contained +'s when the remainder contained ×'s, and most learned to report up to six planes in reverse contrast (left eye white +'s; right eye black +'s). Long-term training allowed some experts to reach eight depth planes. Results suggest that adult stereoscopic vision can learn to distinguish the outputs of six or more statistically independent, contrast-insensitive, narrowly tuned, asymmetric disparity channels in parallel.

Electronic and optical properties of graphene-like InAs: An ab initio study

Science.gov (United States)

Sohrabi, Leila; Boochani, Arash; Ali Sebt, S.; Mohammad Elahi, S.

2018-03-01

The present work initially investigates structural, optical, and electronic properties of graphene-like InAs by using the full potential linear augmented plane wave method in the framework of density functional theory and is then compared with the bulk Indium Arsenide in the wurtzite phase. The lattice parameters are optimized with GGA-PBE and LDA approximations for both 2D- and 3D-InAs. In order to study the electronic properties of graphene-like InAs and bulk InAs in the wurtzite phase, the band gap is calculated by GGA-PBG and GGA-EV approximations. Moreover, optical parameters of graphene-like InAs and bulk InAs such as the real and imaginary parts of dielectric function, electron energy loss function, refractivity, extinction and absorption coefficients, and optical conductivity are investigated. Plasmonic frequencies of 2D- and 3D-InAs are also calculated by using maximum electron energy loss function and the roots of the real part of the dielectric function.

Analysis of Relative Parallelism Between Hamular-Incisive-Papilla Plane and Campers Plane in Edentulous Subjects: A Comparative Study.

Science.gov (United States)

Tambake, Deepti; Shetty, Shilpa; Satish Babu, C L; Fulari, Sangamesh G

2014-12-01

The study was undertaken to evaluate the parallelism between hamular-incisive-papilla plane (HIP) and the Campers plane. And to determine which part of the posterior reference of the tragus i.e., the superior, middle or the inferior of the Camper's plane is parallel to HIP using digital lateral cephalograms. Fifty edentulous subjects with well formed ridges were selected for the study. The master casts were obtained using the standard selective pressure impression procedure. On the deepest point of the hamular notches and the centre of the incisive papilla stainless steel spherical bearings were glued to the cast at the marked points. The study templates were fabricated with autopolymerizing acrylic resin. The subjects were prepared for the lateral cephalograms. Stainless steel spherical bearings were adhered to the superior, middle, inferior points of the tragus of the ear and inferior border of the ala of the nose using surgical adhesive tape. The subjects with study templates were subjected to lateral cephalograms. Cephalometric tracings were done using Autocad 2010 software. Lines were drawn connecting the incisive papilla and hamular notch and the stainless steel spherical bearings placed on the superior, middle and inferior points on the tragus and the ala of the nose i.e., the Campers line S, Campers line M, Campers line I. The angles between the three Camper's line and the HIP were measured and recorded. Higher mean angulation was recorded in Campers line S -HIP (8.03) followed by Campers line M-HIP (4.60). Campers line I-HIP recorded the least angulation (3.80). The HIP is parallel to the Camper's plane. The Camper's plane formed with the posterior reference point as inferior point of the tragus is relatively parallel to the HIP.

Diffraction of love waves by two parallel perfectly weak half planes

International Nuclear Information System (INIS)

Asghar, S.; Zaman, F.D.; Ayub, M.

1986-04-01

We consider the diffraction of Love waves by two parallel perfectly weak half planes in a layer overlying a half space. The problem is formulated in terms of the Wiener-Hopf equations in the transformed plane. The transmitted waves are then calculated using the Wiener-Hopf procedure and inverse transforms. (author)

Kinetics of transformations nucleated on random parallel planes: analytical modelling and computer simulation

International Nuclear Information System (INIS)

Rios, Paulo R; Assis, Weslley L S; Ribeiro, Tatiana C S; Villa, Elena

2012-01-01

In a classical paper, Cahn derived expressions for the kinetics of transformations nucleated on random planes and lines. He used those as a model for nucleation on the boundaries, edges and vertices of a polycrystal consisting of equiaxed grains. In this paper it is demonstrated that Cahn's expression for random planes may be used in situations beyond the scope envisaged in Cahn's original paper. For instance, we derived an expression for the kinetics of transformations nucleated on random parallel planes that is identical to that formerly obtained by Cahn considering random planes. Computer simulation of transformations nucleated on random parallel planes is carried out. It is shown that there is excellent agreement between simulated results and analytical solutions. Such an agreement is to be expected if both the simulation and the analytical solution are correct. (paper)

Driven self-assembly of hard nanoplates on soft elastic shells

International Nuclear Information System (INIS)

Zhang Yao-Yang; Hua Yun-Feng; Deng Zhen-Yu

2015-01-01

The driven self-assembly behaviors of hard nanoplates on soft elastic shells are investigated by using molecular dynamics (MD) simulation method, and the driven self-assembly structures of adsorbed hard nanoplates depend on the shape of hard nanoplates and the bending energy of soft elastic shells. Three main structures for adsorbed hard nanoplates, including the ordered aggregation structures of hard nanoplates for elastic shells with a moderate bending energy, the collapsed structures for elastic shells with a low bending energy, and the disordered aggregation structures for hard shells, are observed. The self-assembly process of adsorbed hard nanoplates is driven by the surface tension of the elastic shell, and the shape of driven self-assembly structures is determined on the basis of the minimization of the second moment of mass distribution. Meanwhile, the deformations of elastic shells can be controlled by the number of adsorbed rods as well as the length of adsorbed rods. This investigation can help us understand the complexity of the driven self-assembly of hard nanoplates on elastic shells. (paper)

Nonlocal free vibration in the pre- and post-buckled states of magneto-electro-thermo elastic rectangular nanoplates with various edge conditions

Science.gov (United States)

Ansari, R.; Gholami, R.

2016-09-01

Considering the small scale effect together with the influences of transverse shear deformation, rotary inertia and the magneto-electro-thermo-mechanical coupling, the linear free vibration of magneto-electro-thermo-elastic (METE) rectangular nanoplates with various edge supports in pre- and post-buckled states is investigated herein. It is assumed that the METE nanoplate is subjected to the external in-plane compressive loads in combination with magnetic, electric and thermal loads. The Mindlin plate theory, von Kármán hypothesis and the nonlocal theory are utilized to develop a size-dependent geometrically nonlinear plate model for describing the size-dependent linear and nonlinear mechanical characteristics of moderately thick METE rectangular nanoplates. The nonlinear governing equations and the corresponding boundary conditions are derived using Hamilton’s principle which are then discretized via the generalized differential quadrature method. The pseudo-arc length continuation approach is used to obtain the equilibrium postbuckling path of METE nanoplates. By the obtained postbuckling response, and taking a time-dependent small disturbance around the buckled configuration, and inserting them into the nonlinear governing equations, an eigenvalue problem is achieved from which the frequencies of pre- and post-buckled METE nanoplates can be calculated. The effects of nonlocal parameter, electric, magnetic and thermal loadings, length-to-thickness ratio and different boundary conditions on the free vibration response of METE rectangular nanoplates in the pre- and post-buckled states are highlighted.

Radiation dosimetry with plane-parallel ionization chambers: An international (IAEA) code of practice

International Nuclear Information System (INIS)

Andreo, P.

1996-01-01

Research on plane-parallel ionization chambers since the IAEA Code of Practice (TRS-277) was published in 1987 has expanded our knowledge on perturbation and other correction factors in ionization chamber dosimeter, and also constructional details of these chambers have been shown to be important. Different national organizations have published, or are in the process of publishing, recommendations on detailed procedures for the calibration and use of plane-parallel ionization chambers. An international working group was formed under the auspices of the IAEA, first to assess the status and validity of IAEA TRS-277, and second to develop an international Code of Practice for the calibration and use of plane-parallel ionization chambers in high-energy electron and photon beams. The purpose of this work is to describe the forthcoming Code of Practice. (author). 39 refs, 3 figs, 2 tabs

Radiation dosimetry with plane-parallel ionization chambers: An international (IAEA) code of practice

Energy Technology Data Exchange (ETDEWEB)

Andreo, P [Lunds Hospital, Lund (Sweden). Radiophysics Dept.; Almond, P R [J.G. Brown Cancer Center, Univ. of Lousville, Lousville, KY (United States). Dept. of Radiation Oncology; Mattsson, O [Sahlgrenska Hospital, Gothenburg (Sweden). Dept. of Radiation Physics; Nahum, A E [Royal Marsden Hospital, Sutton (United Kingdom). Joint Dept. of Physics; Roos, M [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany)

1996-08-01

Research on plane-parallel ionization chambers since the IAEA Code of Practice (TRS-277) was published in 1987 has expanded our knowledge on perturbation and other correction factors in ionization chamber dosimeter, and also constructional details of these chambers have been shown to be important. Different national organizations have published, or are in the process of publishing, recommendations on detailed procedures for the calibration and use of plane-parallel ionization chambers. An international working group was formed under the auspices of the IAEA, first to assess the status and validity of IAEA TRS-277, and second to develop an international Code of Practice for the calibration and use of plane-parallel ionization chambers in high-energy electron and photon beams. The purpose of this work is to describe the forthcoming Code of Practice. (author). 39 refs, 3 figs, 2 tabs.

State-plane analysis of parallel resonant converter

Science.gov (United States)

Oruganti, R.; Lee, F. C.

1985-01-01

A method for analyzing the complex operation of a parallel resonant converter is developed, utilizing graphical state-plane techniques. The comprehensive mode analysis uncovers, for the first time, the presence of other complex modes besides the continuous conduction mode and the discontinuous conduction mode and determines their theoretical boundaries. Based on the insight gained from the analysis, a novel, high-frequency resonant buck converter is proposed. The voltage conversion ratio of the new converter is almost independent of load.

Synthesis and electrical properties of silver nanoplates for electronic applications

Directory of Open Access Journals (Sweden)

Xiong Nana

2015-06-01

Full Text Available In this paper, silver nanoplates of 100 to 500 nm size were synthesized by reduction of silver nitrate with N,Ndimethylformamide, using poly(vinylpyrolidone as a surfactant and ferric chloride as a controlling agent, at 120 to 160 °C for 5 to 24 hours. The influence of the concentration of ferric chloride, the reaction temperature and reaction time on the morphology of the product has been investigated by transmission electron microscopy, scanning electron microscopy and UV-Vis spectroscopy. The results indicated that the products obtained at the low reaction temperature and short reaction time in the presence of FeCl3 in the reaction solution were in the form of silver nanoplates, whose morphology was mainly triangular and hexagonal. In addition, the size and thickness of the nanoplates increased with increasing of the FeCl3 concentration. At a high reaction temperature and long reaction time, the truncated triangle and hexagonal nanoplates were mainly produced. Furthermore, the sintering behavior of nanoplates was studied and the results showed that sintering of the silver nanoplates started at 180 °C, and a typical sintering behavior was observed at higher temperatures. The incorporation of the silver nanoplates into the polymer matrix with micro-sized silver flakes led to an increase in the matrix resistivity in almost all cases, especially at high fractions and low curing temperatures. The curing temperature had an influence on the resistivity of the conductive adhesives filled with micro-sized silver flakes and silver nanoplates due to sintering of the silver nanoplates.

Locating an axis-parallel rectangle on a Manhattan plane

DEFF Research Database (Denmark)

Brimberg, Jack; Juel, Henrik; Körner, Mark-Christoph

2014-01-01

In this paper we consider the problem of locating an axis-parallel rectangle in the plane such that the sum of distances between the rectangle and a finite point set is minimized, where the distance is measured by the Manhattan norm 1. In this way we solve an extension of the Weber problem...

Linear and Nonlinear Optical Properties of Micrometer-Scale Gold Nanoplates

International Nuclear Information System (INIS)

Liu Xiao-Lan; Peng Xiao-Niu; Yang Zhong-Jian; Li Min; Zhou Li

2011-01-01

Micrometer-scale gold nanoplates have been synthesized in high yield through a polyol process. The morphology, crystal structure and linear optical extinction of the gold nanoplates have been characterized. These gold nanoplates are single-crystalline with triangular, truncated triangular and hexagonal shapes, exhibiting strong surface plasmon resonance (SPR) extinction in the visible and near-infrared (NIR) region. The linear optical properties of gold nanoplates are also investigated by theoretical calculations. We further investigate the nonlinear optical properties of the gold nanoplates in solution by Z-scan technique. The nonlinear absorption (NLA) coefficient and nonlinear refraction (NLR) index are measured to be 1.18×10 2 cm/GW and −1.04×10 −3 cm 2 /GW, respectively. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

The enhanced alcohol-sensing response of ultrathin WO3 nanoplates

International Nuclear Information System (INIS)

Chen Deliang; Hou Xianxiang; Wen Hejing; Wang Yu; Wang Hailong; Zhang Rui; Lu Hongxia; Xu Hongliang; Guan Shaokang; Li Xinjian; Sun Jing; Gao Lian

2010-01-01

Chemical sensors based on semiconducting metal oxide nanocrystals are of academic and practical significance in industrial processing and environment-related applications. Novel alcohol response sensors using two-dimensional WO 3 nanoplates as active elements have been investigated in this paper. Single-crystalline WO 3 nanoplates were synthesized through a topochemical approach on the basis of intercalation chemistry (Chen et al 2008 Small 4 1813). The as-obtained WO 3 nanoplate pastes were coated on the surface of an Al 2 O 3 ceramic microtube with four Pt electrodes to measure their alcohol-sensing properties. The results show that the WO 3 nanoplate sensors are highly sensitive to alcohols (e.g., methanol, ethanol, isopropanol and butanol) at moderate operating temperatures (260-360 deg. C). For butanol, the WO 3 nanoplate sensors have a sensitivity of 31 at 2 ppm and 161 at 100 ppm, operating at 300 deg. C. For other alcohols, WO 3 nanoplate sensors also show high sensitivities: 33 for methanol at 300 ppm, 70 for ethanol at 200 ppm, and 75 for isopropanol at 200 ppm. The response and recovery times of the WO 3 nanoplate sensors are less than 15 s for all the test alcohols. A good linear relationship between the sensitivity and alcohol concentrations has been observed in the range of 2-300 ppm, whereas the WO 3 nanoparticle sensors have not shown such a linear relationship. The sensitivities of the WO 3 nanoplate sensors decrease and their response times become short when the operating temperatures increase. The enhanced alcohol-sensing performance could be attributed to the ultrathin platelike morphology, the high crystallinity and the loosely assembling structure of the WO 3 nanoplates, due to the advantages of the effective adsorption and rapid diffusion of the alcohol molecules.

Modeling of Electromagnetic Fields in Parallel-Plane Structures: A Unified Contour-Integral Approach

Directory of Open Access Journals (Sweden)

M. Stumpf

2017-04-01

Full Text Available A unified reciprocity-based modeling approach for analyzing electromagnetic fields in dispersive parallel-plane structures of arbitrary shape is described. It is shown that the use of the reciprocity theorem of the time-convolution type leads to a global contour-integral interaction quantity from which novel both time- and frequency-domain numerical schemes can be arrived at. Applications of the numerical method concerning the time-domain radiated interference and susceptibility of parallel-plane structures are discussed and illustrated on numerical examples.

The Crystal structure of InAs nanorods grown onto Si[111] substrate

Energy Technology Data Exchange (ETDEWEB)

Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Walter-Flex-Str. 3,57072, Siegen (Germany); Breuer, Steffen; Dimakis, Manos; Geelhaar, Lutz [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2011-07-01

Nanowires are of particular interest due to the ability to synthesize heterostructures in the nanometer range. It was found that nearly any AIIIBV semiconductor material can be grown as NWs onto another AIIIBV or group IV [111] substrate independent from lattice mismatch. We presented an X-ray characterization of InAs NRs on Si [111] grown by assist free MBE method. Lattice mismatch of this materials is 11%. For study of strain realizing we concentrated our research on initial stages of growth process investigating samples set with different growth time. Using synchrotron radiation we have performed experiments in symmetrical and asymmetrical out-of plane scattering geometry and grazing-incidence diffraction. Combining the results we were able to characterize the transition between silicon silicon substrate and InAs NWs. We find in-plane lattice mismatch of -0.18% close to the interface compared to InAs bulk material. With help of micro-focus setup we are able measure structural parameters of single NWs to determine the strain accomodation as function of NW size. In particular using asymmetric wurzite-sensitive reflections under coherent beam illumination we could quantify the number of stacking faults. In the talk we present details of the analysis and first simulation results.

Ultraflat Au nanoplates as a new building block for molecular electronics.

Science.gov (United States)

Jeong, Wooseok; Lee, Miyeon; Lee, Hyunsoo; Lee, Hyoban; Kim, Bongsoo; Park, Jeong Young

2016-05-27

We demonstrate the charge transport properties of a self-assembled organic monolayer on Au nanoplates with conductive probe atomic force microscopy (CP-AFM). Atomically flat Au nanoplates, a few hundred micrometers on each side, that have only (111) surfaces, were synthesized using the chemical vapor transport method; these nanoplates were employed as the substrates for hexadecanethiol (HDT) self-assembled monolayers (SAMs). Atomic-scale high-resolution images show (√3 x √3) R30° molecular periodicity, indicating a well-ordered structure of the HDT on the Au nanoplates. We observed reduced friction and adhesion forces on the HDT SAMs on Au nanoplates, compared with Si substrates, which is consistent with the lubricating nature of HDT SAMs. The electrical properties, such as I-V characteristics and current as a function of load, were measured using CP-AFM. We obtained a tunneling decay constant (β) of 0.57 Å(-1), including through-bond (βtb = 0.99 Å(-1)) and through-space (βts = 1.36 Å(-1)) decay constants for the two-pathway model. This indicates that the charge transport properties of HDT SAMs on Au nanoplates are consistent with those on a Au (111) film, suggesting that SAMs on nanoplates can provide a new building block for molecular electronics.

Preparation of triangular and hexagonal silver nanoplates on the surface of quartz substrate

International Nuclear Information System (INIS)

Jia Huiying; Zeng Jianbo; An Jing; Song Wei; Xu Weiqing; Zhao Bing

2008-01-01

In this paper, triangular and hexagonal silver nanoplates were prepared on the surface of quartz substrate using photoreduction of silver ions in the presence of silver seeds. The obtained silver nanoplates were characterized by atomic force microscopy and UV-vis spectroscopy. It was found that the silver seeds played an important role in the formation of triangular and hexagonal silver nanoplates. By varying the irradiation time, nanoplates with different sizes and shapes could be obtained. The growth mechanism for triangular and hexagonal nanoplates prepared on quartz substrate was discussed

Facile synthesis of porous Co3O4 nanoplates for supercapacitor ...

Indian Academy of Sciences (India)

Administrator

Abstract. Porous tricobalt tetraoxide (Co3O4) nanoplates with large aspect ratio have been obtained by annealing Co(OH)2 precursor nanoplates synthesized by a facile reflux method without the need for any template or surfactant. After the heat treatment, the as-obtained phase-pure Co3O4 nanoplates with a well- retained ...

Nonlocal vibration and biaxial buckling of double-viscoelastic-FGM-nanoplate system with viscoelastic Pasternak medium in between

Energy Technology Data Exchange (ETDEWEB)

Liu, J.C. [College of Civil Engineering and Architecture, Zhejiang University, Hangzhou 310058 (China); Zhang, Y.Q., E-mail: cyqzhang@zju.edu.cn [College of Civil Engineering and Architecture, Zhejiang University, Hangzhou 310058 (China); State Key Laboratory of Mechanical Structural Strength and Vibration, Xi' an Jiaotong University, Xi' an 710049 (China); Fan, L.F. [College of Architecture and Civil Engineering, Beijing University of Technology, Beijing 100084 (China)

2017-04-11

The general equation for transverse vibration of double-viscoelastic-FGM-nanoplate system with viscoelastic Pasternak medium in between and each nanoplate subjected to in-plane edge loads is formulated on the basis of the Eringen's nonlocal elastic theory and the Kelvin model. The factors of the structural damping, medium damping, small size effect, loading ratio, and Winkler modulus and shear modulus of the medium are incorporated in the formulation. Based on the Navier's method, the analytical solutions for vibrational frequency and buckling load of the system with simply supported boundary conditions are obtained. The influences of these factors on vibrational frequency and buckling load of the system are discussed. It is demonstrated that the vibrational frequency of the system for the out-of-phase vibration is dependent upon the structural damping, small size effect and viscoelastic Pasternak medium, whereas the vibrational frequency for the in-phase vibration is independent of the viscoelastic Pasternak medium. While the buckling load of the system for the in-phase buckling case has nothing to do with the viscoelastic Pasternak medium, the buckling load for the out-of-phase case is related to the small size effect, loading ratio and Pasternak medium. - Highlights: • Vibration of double-viscoelastic-FGM-nanoplate system under in-plane edge loads is investigated. • Biaxial buckling of the system with simply supported boundary conditions is analyzed. • Explicit expression for the vibrational frequency and buckling load is obtained. • Impacts of viscoelastic Pasternak medium on vibrational frequency and buckling load are discussed. • Influences of structural damping, small size effect and loading ratio are also considered.

Light-induced reversible expansion of individual gold nanoplates

Directory of Open Access Journals (Sweden)

Jinsheng Lu

2017-10-01

Full Text Available Light-induced mechanical response of materials has been extensively investigated and widely utilized to convert light energy into mechanical energy directly. The metallic nanomaterials have excellent photothermal properties and show enormous potential in micromechanical actuators, etc. However, the photo-thermo-mechanical properties of individual metallic nanostructures have yet to be well investigated. Here, we experimentally demonstrate a way to realize light-induced reversible expansion of individual gold nanoplates on optical microfibers. The light-induced thermal expansion coefficient is obtained as 21.4 ± 4.6 ∼ 31.5 ± 4.2 μ·K-1 when the light-induced heating temperature of the gold nanoplates is 240 ∼ 490 °C. The photo-thermo-mechanical response time of the gold nanoplates is about 0.3 ± 0.1 s. This insight into the photo-thermo-mechanical properties of the gold nanoplates could deepen the understanding of the light-induced reversible expansion behavior in nanoscale and pave the way for applications based on this piezoelectric-like response, such as light-driven metallic micromotors.

CuS nanoplates from ionic liquid precursors—Application in organic photovoltaic cells

Science.gov (United States)

Kim, Yohan; Heyne, Benjamin; Abouserie, Ahed; Pries, Christopher; Ippen, Christian; Günter, Christina; Taubert, Andreas; Wedel, Armin

2018-05-01

Hexagonal p-type semiconductor CuS nanoplates were synthesized via a hot injection method from bis(trimethylsilyl)sulfide and the ionic liquid precursor bis(N-dodecylpyridinium) tetrachloridocuprate(ii). The particles have a broad size distribution with diameters between 30 and 680 nm and well-developed crystal habits. The nanoplates were successfully incorporated into organic photovoltaic (OPV) cells as hole conduction materials. The power conversion efficiency of OPV cells fabricated with the nanoplates is 16% higher than that of a control device fabricated without the nanoplates.

Size-dependent bending, buckling and vibration of higher-order shear deformable magneto-electro-thermo-elastic rectangular nanoplates

Science.gov (United States)

Gholami, Raheb; Ansari, Reza; Gholami, Yousef

2017-06-01

The aim of the present study is to propose a unified size-dependent higher-order shear deformable plate model for magneto-electro-thermo-elastic (METE) rectangular nanoplates by adopting the nonlocal elasticity theory to capture the size effect, and by utilizing a generalized shape function to consider the effects of transverse shear deformation and rotary inertia. By considering various shape functions, the proposed plate model can be reduced to the nonlocal plate model based upon the Kirchhoff, Mindlin and Reddy plate theories, as well as the parabolic, trigonometric, hyperbolic and exponential shear deformation plate theories. The governing equations of motion and corresponding boundary conditions of METE nanoplates subjected to external in-plane, transverse loads as well as magnetic, electric and thermal loadings, are obtained using Hamilton’s principle. Then, as in some case studies, the static bending, buckling, and free vibration characteristics of simply-supported METE rectangular nanoplates are investigated based upon the Navier solution approach. Numerical results are provided in order to investigate the influences of various parameters including the nondimensional nonlocal parameter, type of transverse loading, temperature change, applied voltage, and external magnetic potential on the mechanical behaviors of METE nanoplates. Furthermore, comparisons are made between the results predicted by different nonlocal plate models by utilizing the developed unified nonlocal plate model and selecting the associated shape functions. It is illustrated that by using the presented unified nonlocal plate model, the development of a nonlocal plate model based upon any existing higher-order shear deformable plate theory is a simple task.

Energy Band Structure Studies Of Zinc-Blende GaAs and InAs ...

African Journals Online (AJOL)

A self-consistent calculation of the structural and electronic properties of zinc blende GaAs and InAs has been carried out. The calculations were done using the full potential-linearized augmented plane wave (FPLAPW) method within the density functional theory (DFT). The exchange-correlation energy used is the ...

Comparing calibration methods of electron beams using plane-parallel chambers with absorbed-dose to water based protocols

International Nuclear Information System (INIS)

Stewart, K.J.; Seuntjens, J.P.

2002-01-01

Recent absorbed-dose-based protocols allow for two methods of calibrating electron beams using plane-parallel chambers, one using the N D,w Co for a plane-parallel chamber, and the other relying on cross-calibration of the plane-parallel chamber in a high-energy electron beam against a cylindrical chamber which has an N D,w Co factor. The second method is recommended as it avoids problems associated with the P wall correction factors at 60 Co for plane-parallel chambers which are used in the determination of the beam quality conversion factors. In this article we investigate the consistency of these two methods for the PTW Roos, Scanditronics NACP02, and PTW Markus chambers. We processed our data using both the AAPM TG-51 and the IAEA TRS-398 protocols. Wall correction factors in 60 Co beams and absorbed-dose beam quality conversion factors for 20 MeV electrons were derived for these chambers by cross-calibration against a cylindrical ionization chamber. Systematic differences of up to 1.6% were found between our values of P wall and those from the Monte Carlo calculations underlying AAPM TG-51, and up to 0.6% when comparing with the IAEA TRS-398 protocol. The differences in P wall translate directly into differences in the beam quality conversion factors in the respective protocols. The relatively large spread in the experimental data of P wall , and consequently the absorbed-dose beam quality conversion factor, confirms the importance of the cross-calibration technique when using plane-parallel chambers for calibrating clinical electron beams. We confirmed that for well-guarded plane-parallel chambers, the fluence perturbation correction factor at d max is not significantly different from the value at d ref . For the PTW Markus chamber the variation in the latter factor is consistent with published fits relating it to average energy at depth

Identifying logical planes formed of compute nodes of a subcommunicator in a parallel computer

Science.gov (United States)

Davis, Kristan D.; Faraj, Daniel A.

2016-03-01

In a parallel computer, a plurality of logical planes formed of compute nodes of a subcommunicator may be identified by: for each compute node of the subcommunicator and for a number of dimensions beginning with a first dimension: establishing, by a plane building node, in a positive direction of the first dimension, all logical planes that include the plane building node and compute nodes of the subcommunicator in a positive direction of a second dimension, where the second dimension is orthogonal to the first dimension; and establishing, by the plane building node, in a negative direction of the first dimension, all logical planes that include the plane building node and compute nodes of the subcommunicator in the positive direction of the second dimension.

Self-templated synthesis of single-crystal and single-domain ferroelectric nanoplates

KAUST Repository

Chao, Chunying

2012-08-15

Free-standing single-crystal PbTiO 3 nanoplates (see picture) were synthesized by a facile hydrothermal method. A "self-templated" crystal growth is presumed to lead to the formation of the PbTiO 3 nanoplates, which have ferroelectric single-domain structures, whose polarization areas can be manipulated by writing and reading. The nanoplates are also effective catalysts for the oxidation of carbon monoxide. © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

A study of parallelism of the occlusal plane and ala-tragus line.

Science.gov (United States)

Sadr, Katayoun; Sadr, Makan

2009-01-01

Orientation of the occlusal plane is one of the most important clinical procedures in prostho-dontic rehabilitation of edentulous patients. The aim of this study was to define the best posterior reference point of ala-tragus line for orientation of occlusal plane for complete denture fabrication. Fifty-three dental students (27 females and 26 males) with complete natural dentition and Angel's Class I occlusal relationship were selected. The subjects were photographed in natural head position while clenching on a Fox plane. After tracing the photographs, the angles between the following lines were measured: the occlusal plane (Fox plane) and the superior border of ala-tragus, the occlusal plane (Fox plane) and the middle of ala-tragus as well as the occlusal plane (Fox plane) and the inferior border of ala-tragus. Descriptive statistics, one sample t-test and independent t-test were used. P value less than 0.05 was considered significant. There was no parallelism between the occlusal plane and ala-tragus line with three different posterior ends and one sample t-test showed that the angles between them were significantly different from zero (pplane. The superior border of the tragus is suggested as the posterior reference for ala-tragus line.

Plane-parallel biases computed from inhomogeneous Arctic clouds and sea ice

Science.gov (United States)

Rozwadowska, Anna; Cahalan, Robert F.

2002-10-01

Monte Carlo simulations of the expected influence of nonuniformity in cloud structure and surface albedo on shortwave radiative fluxes in the Arctic atmosphere are presented. In particular, plane-parallel biases in cloud albedo and transmittance are studied for nonabsorbing, low-level, all-liquid stratus clouds over sea ice. The "absolute bias" is defined as the difference between the cloud albedo or transmittance for the uniform or plane-parallel case, and the albedo or transmittance for nonuniform conditions with the same mean cloud optical thickness and the same mean surface albedo, averaged over a given area (i.e., bias > 0 means plane-parallel overestimates). Ranges of means and standard deviations of input parameters typical of Arctic conditions are determined from the First International Satellite Cloud Climatology Project (ISCCP) Regional Experiment Artic Cloud Experiment (FIRE/ACE)/Surface Heat Budget of the Arctic Ocean (SHEBA)/Atmospheric Radiation Measurement Program (ARM) experiment, a cooperative effort of the Department of Energy, NASA, NSF, the National Oceanic and Atmospheric Administration, the Office of Naval Research, and the Atmospheric Environment Service. We determine the sensitivity of the bias with respect to the following: domain averaged means and spatial variances of cloud optical thickness and surface albedo, shape of the surface reflectance function, presence of a scattering layer under the clouds, and solar zenith angle. The simulations show that the biases in Arctic conditions are generally lower than in subtropical stratocumulus. The magnitudes of the absolute biases are unlikely to exceed 0.02 for albedo and 0.05 for transmittance. The "relative bias" expresses the absolute bias as a percentage of the actual cloud albedo or transmittance. The magnitude of the relative bias in albedo is typically below 2% over the reflective Arctic surface, while the magnitude of the relative bias in transmittance can exceed 10%.

Poly(vinylpyrrolidone)-Free Multistep Synthesis of Silver Nanoplates with Plasmon Resonance in the Near Infrared Range.

Science.gov (United States)

Khan, Assad U; Zhou, Zhengping; Krause, Joseph; Liu, Guoliang

2017-11-01

Herein, a poly(vinylpyrrolidone) (PVP)-free method is described for synthesizing Ag nanoplates that have localized surface plasmon resonance in the near-infrared (NIR) range. Citrate-capped Ag spherical nanoparticles are first grown into small Ag nanoplates that resonate in the range of 500-800 nm. The small Ag nanoplates are used as seeds to further grow into large Ag nanoplates with a lateral dimension of 100-600 nm and a plasmon resonance wavelength of 800-1660 nm and above. The number of growth steps can be increased as desired. Without introducing additional citrate into the solutions of small Ag nanoplate seeds, large Ag nanoplates can be synthesized within minutes. The entire synthesis is completely PVP free, which promotes the nanoparticle growth along the lateral direction to form large Ag nanoplates. The multistep growth and the minimum usage of citrate are essential for the fast growth of high-aspect-ratio Ag nanoplates resonating in the NIR range. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Self-templated synthesis of single-crystal and single-domain ferroelectric nanoplates

KAUST Repository

Chao, Chunying; Ren, Zhaohui; Zhu, Yihan; Xiao, Zhen; Liu, Zhenya; Xú , Gang; Mai, Jiangquan; Li, Xiang; Shen, Ge; Han, Gaorong

2012-01-01

Free-standing single-crystal PbTiO 3 nanoplates (see picture) were synthesized by a facile hydrothermal method. A "self-templated" crystal growth is presumed to lead to the formation of the PbTiO 3 nanoplates, which have ferroelectric single

Optical escape factors for Doppler profiles in spherical, cylindrical and plane parallel geometries

International Nuclear Information System (INIS)

Otsuka, Masamoto.

1977-12-01

Optical escape factors for Doppler profiles in spherical, cylindrical and plane parallel geometries are tabulated over the range of optical depths from 10 -3 to 10 5 . Relations with the known formulae are discussed also. (auth.)

String interactions in a plane-fronted parallel-wave spacetime

International Nuclear Information System (INIS)

Gopakumar, Rajesh

2002-01-01

We argue that string interactions in a plane-fronted parallel-wave spacetime are governed by an effective coupling g eff =g s (μp + α ' )f(μp + α ' ) where f(μp + α ' ) is proportional to the light-cone energy of the string states involved in the interaction. This simply follows from generalities of a matrix string description of this background. g eff nicely interpolates between the expected result (g s ) for flat space (small μp + α ' ) and a recently conjectured expression from the perturbative gauge theory side (large μp + α ' )

The synthesis of high yield Au nanoplate and optimized optical properties

Science.gov (United States)

Ni, Yuan; Kan, Caixia; Xu, Juan; Liu, Yang

2018-02-01

The applications of Au nanoplates based on the tunable plasmon properties and enhanced electromagnetic field at the sharp tip and straight edges, have generated a great deal of interest in recent years, especially in the fields of the bio-chemical sensing and imaging. In this review, we focus on the synthesis of nanoscale platelike structures by multiple synthetic strategies (such as thermal solution method, seed-mediated method, seedless method, and some greener methods), and explore corresponding growth mechanism in different synthetic approaches. Other than to review the fabrication of Au nanoplates, the purification strategies are also discussed in order to support the applications in various fields. Modifying synthetic method to obtain well-defined nanoplates can tuned optical absorption from visible to near-infrared region. Moreover, the Au nanoplate dimers (vertex-to-vertex and edge-by-edge assemblies) can induce more specific plasmon properties and stronger localized field due to coupling of interparticles. Compared with 0D quasi-spherical nanoparticles and 1D nanorods, the 2D nanoplates can be applied as a good surface-enhanced Raman scattering (SERS) substrate because of the sharp corners and straight edges. This review will provide background information for the controllable synthesis of anisotropic nanoparticles and advance the application of coupled nanostructures.

Label-free immunosensor based on Pd nanoplates for amperometric immunoassay of alpha-fetoprotein.

Science.gov (United States)

Wang, Huan; Li, He; Zhang, Yihe; Wei, Qin; Ma, Hongmin; Wu, Dan; Li, Yan; Zhang, Yong; Du, Bin

2014-03-15

In this paper, Pd nanoplates were used as a kind of electrode materials for fabrication of an electrochemical immunosensor, which was applied for detection of cancer biomarker alpha-fetoprotein (AFP). Thanks to the unique structure and properties of Pd nanoplates, the antibody of AFP (Ab) was effectively immobilized onto the surface of the Pd nanoplates modified glassy carbon electrode (GCE). Moreover, the good electrochemical properties of Pd nanoplates greatly improved the electronic transmission rate and enhanced the electrochemical signal, which led to an increase of the detection sensitivity. Based on the specific antibody-antigen interaction, a label-free immunosensor based on Pd nanoplates was developed for sensing of AFP. The current method allows us to detect AFP over a wide concentration range from 0.01 to 75.0 ng/mL with a detection limit of 4 pg/mL. The proposed immunosensor has been used to determine AFP in human serum with satisfactory results. © 2013 Elsevier B.V. All rights reserved.

The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

CERN Document Server

Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

1999-01-01

Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

Similarity solutions of time-dependent relativistic radiation-hydrodynamical plane-parallel flows

Science.gov (United States)

Fukue, Jun

2018-04-01

Similarity solutions are examined for the frequency-integrated relativistic radiation-hydrodynamical flows, which are described by the comoving quantities. The flows are vertical plane-parallel time-dependent ones with a gray opacity coefficient. For adequate boundary conditions, the flows are accelerated in a somewhat homologous manner, but terminate at some singular locus, which originates from the pathological behavior in relativistic radiation moment equations truncated in finite orders.

Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene

Science.gov (United States)

Choi, Ji Eun; Yoo, Jinkyoung; Lee, Donghwa; Hong, Young Joon; Fukui, Takashi

2018-04-01

This study demonstrates the crystal-phase intergradation of InAs nanostructures grown on graphene via van der Waals epitaxy. InAs nanostructures with diverse diameters are yielded on graphene. High-resolution transmission electron microscopy (HR-TEM) reveals two crystallographic features of (i) wurtzite (WZ)-to-zinc blende (ZB) intergradation along the growth direction of InAs nanostructures and (ii) an increased mean fraction of ZB according to diameter increment. Based on the HR-TEM observations, a crystal-phase intergradation diagram is depicted. We discuss how the formation of a WZ-rich phase during the initial growth stage is an effective way of releasing heterointerfacial stress endowed by the lattice mismatch of InAs/graphene for energy minimization in terms of less in-plane lattice mismatching between WZ-InAs and graphene. The WZ-to-ZB evolution is responsible for the attenuation of the bottom-to-top surface charge interaction as growth proceeds.

Higher order perturbation theory applied to radiative transfer in non-plane-parallel media

International Nuclear Information System (INIS)

Box, M.A.; Polonsky, I.N.; Davis, A.B.

2003-01-01

Radiative transfer in non-plane-parallel media is a very challenging problem, which is currently the subject of concerted efforts to develop computational techniques which may be used to tackle different tasks. In this paper we develop the full formalism for another technique, based on radiative perturbation theory. With this approach, one starts with a plane-parallel 'base model', for which many solution techniques exist, and treat the horizontal variability as a perturbation. We show that under the most logical assumption as to the base model, the first-order perturbation term is zero for domain-average radiation quantities, so that it is necessary to go to higher order terms. This requires the computation of the Green's function. While this task is by no means simple, once the various pieces have been assembled they may be re-used for any number of perturbations--that is, any horizontal variations

Synthesis of Mesoporous Single Crystal Co(OH)2 Nanoplate and Its Topotactic Conversion to Dual-Pore Mesoporous Single Crystal Co3O4.

Science.gov (United States)

Jia, Bao-Rui; Qin, Ming-Li; Li, Shu-Mei; Zhang, Zi-Li; Lu, Hui-Feng; Chen, Peng-Qi; Wu, Hao-Yang; Lu, Xin; Zhang, Lin; Qu, Xuan-Hui

2016-06-22

A new class of mesoporous single crystalline (MSC) material, Co(OH)2 nanoplates, is synthesized by a soft template method, and it is topotactically converted to dual-pore MSC Co3O4. Most mesoporous materials derived from the soft template method are reported to be amorphous or polycrystallined; however, in our synthesis, Co(OH)2 seeds grow to form single crystals, with amphiphilic block copolymer F127 colloids as the pore producer. The single-crystalline nature of material can be kept during the conversion from Co(OH)2 to Co3O4, and special dual-pore MSC Co3O4 nanoplates can be obtained. As the anode of lithium-ion batteries, such dual-pore MSC Co3O4 nanoplates possess exceedingly high capacity as well as long cyclic performance (730 mAh g(-1) at 1 A g(-1) after the 350th cycle). The superior performance is because of the unique hierarchical mesoporous structure, which could significantly improve Li(+) diffusion kinetics, and the exposed highly active (111) crystal planes are in favor of the conversion reaction in the charge/discharge cycles.

Analytical form of current-voltage characteristic of parallel-plane, cylindrical and spherical ionization chambers with homogeneous ionization

Energy Technology Data Exchange (ETDEWEB)

Stoyanov, D G [Faculty of Engineering and Pedagogy in Sliven, Technical University of Sofia, 59, Bourgasko Shaussee Blvd, 8800 Sliven (Bulgaria)

2007-11-15

The elementary processes taking place in the formation of charged particles and their flow in parallel-plane, cylindrical and spherical geometry cases of ionization chamber are considered. On the basis of particles and charges balance a differential equation describing the distribution of current densities in the ionization chamber volume is obtained. As a result of the differential equation solution an analytical form of the current-voltage characteristic of an ionization chamber with homogeneous ionization is obtained. For the parallel-plane case comparision with experimental data is performed.

Analytical form of current-voltage characteristic of parallel-plane, cylindrical and spherical ionization chambers with homogeneous ionization

International Nuclear Information System (INIS)

Stoyanov, D G

2007-01-01

The elementary processes taking place in the formation of charged particles and their flow in parallel-plane, cylindrical and spherical geometry cases of ionization chamber are considered. On the basis of particles and charges balance a differential equation describing the distribution of current densities in the ionization chamber volume is obtained. As a result of the differential equation solution an analytical form of the current-voltage characteristic of an ionization chamber with homogeneous ionization is obtained. For the parallel-plane case comparision with experimental data is performed

Statistical optimization of synthesis procedure and characterization of europium (III) molybdate nano-plates

Energy Technology Data Exchange (ETDEWEB)

Pourmortazavi, Seied Mahdi [Malek Ashtar University of Technology, Faculty of Material and Manufacturing Technologies, P. O. Box 16765-3454, Tehran (Iran, Islamic Republic of); Rahimi-Nasrabadi, Mehdi [Imam Hossein University, Nano Science Center, Tehran (Iran, Islamic Republic of); Fazli, Yousef [Islamic Azad University, Department of Chemistry, Faculty of Science, Arak Branch, Arak (Iran, Islamic Republic of); Mohammad-Zadeh, Mohammad [Sabzevar University of Medical Sciences, Department of Physiology and Pharmacology, School of Medicine, Sabzevar (Iran, Islamic Republic of)

2015-06-15

Europium (III) molybdate nano-plates were synthesized in this work via chemical precipitation route involving adding of europium (III) ion solution to the aqueous solution of molybdate reagent. Effects of some reaction variables such as concentrations of europium and molybdate ions, flow rate of europium reagent, and reactor temperature on the diameter of the synthesized europium (III) molybdate nano-plates were experimentally investigated by orthogonal array design. The results showed that the size of europium (III) molybdate nano-plates can be optimized by adjusting the concentrations of europium (III) and molybdate ions, as well as the reactional temperature. Europium (III) molybdate nano-plates prepared under the optimum conditions were characterized by X-ray powder diffraction, scanning electron microscopy, and Fourier transform infrared spectroscopy. (orig.)

The evidence for synthesis of truncated triangular silver nanoplates in the presence of CTAB

International Nuclear Information System (INIS)

He Xin; Zhao Xiujian; Chen Yunxia; Feng Jinyang

2008-01-01

Truncated triangular silver nanoplates were prepared by a solution-phase approach, which involved the seed-mediated growth of silver nanoparticles in the presence of cetyltrimethylammonium bromide (CTAB) at 40 deg. C. The result of X-ray diffraction indicates that the as-prepared nanoparticles are made of pure face centered cubic silver. Transmission electron microscopy and atomic force microscopy studies show that the truncated triangular silver nanoplates, with edge lengths of 50 ± 5 nm and thicknesses of 27 ± 3 nm, are oriented differently on substrates of a copper grid and a fresh mica flake. The corners of these nanoplates are round. The selected area electron diffraction analysis reveals that the silver nanoplates are single crystals with an atomically flat surface. We determine the holistic morphology of truncated triangular silver nanoplates through the above measurements with the aid of computer-aided 3D perspective images

Circularly Polarized Low-Profile Antenna for Radiating Parallel to Ground Plane for RFID Reader Applications

Directory of Open Access Journals (Sweden)

Kittima Lertsakwimarn

2013-01-01

Full Text Available This paper presents a low-profile printed antenna with double U-shaped arms radiating circular polarization for the UHF RFID readers. The proposed antenna consists of double U-shaped strip structures and a capacitive feeding line to generate circular polarization. A part of the U-shaped arms is bent by 90° to direct the main beam parallel to the ground plane. From the results, -10 dB |S11| and 3 dB axial ratio of the antenna cover a typical UHF RFID band from 920 MHz to 925 MHz. The bidirectional beam is obtained with the maximum gain of 1.8 dBic in the parallel direction to the ground plane at the 925 MHz. The overall size of the proposed antenna including ground plane is 107 mm × 57 mm × 12.8 mm (0.33λ0 × 0.17λ0 × 0.04λ0.

InaSAFE applications in disaster preparedness

Science.gov (United States)

Pranantyo, Ignatius Ryan; Fadmastuti, Mahardika; Chandra, Fredy

2015-04-01

Disaster preparedness activities aim to reduce the impact of disasters by being better prepared to respond when a disaster occurs. In order to better anticipate requirements during a disaster, contingency planning activities can be undertaken prior to a disaster based on a realistic disaster scenario. InaSAFE is a tool that can inform this process. InaSAFE is a free and open source software that estimates the impact to people and infrastructure from potential hazard scenarios. By using InaSAFE, disaster managers can develop scenarios of disaster impacts (people and infrastructures affected) to inform their contingency plan and emergency response operation plan. While InaSAFE provides the software framework exposure data and hazard data are needed as inputs to run this software. Then InaSAFE can be used to forecast the impact of the hazard scenario to the exposure data. InaSAFE outputs include estimates of the number of people, buildings and roads are affected, list of minimum needs (rice and clean water), and response checklist. InaSAFE is developed by Indonesia's National Disaster Management Agency (BNPB) and the Australian Government, through the Australia-Indonesia Facility for Disaster Reduction (AIFDR), in partnership with the World Bank - Global Facility for Disaster Reduction and Recovery (GFDRR). This software has been used in many parts of Indonesia, including Padang, Maumere, Jakarta, and Slamet Mountain for emergency response and contingency planning.

Enhanced photoactivity from single-crystalline SrTaO2N nanoplates synthesized by topotactic nitridation

International Nuclear Information System (INIS)

Fu, Jie; Skrabalak, Sara E.

2017-01-01

There are few methods yielding oxynitride crystals with defined shape, yet shape-controlled crystals often give enhanced photoactivity. Herein, single-crystalline SrTaO 2 N nanoplates and polyhedra are achieved selectively. Central to these synthetic advances is the crystallization pathways used, in which single-crystalline SrTaO 2 N nanoplates form by topotactic nitridation of aerosol-prepared Sr 2 Ta 2 O 7 nanoplates and SrTaO 2 N polyhedra form by flux-assisted nitridation of the nanoplates. Evaluation of these materials for the oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) showed improved performance for the SrTaO 2 N nanoplates, with a record apparent quantum efficiency (AQE) of 6.1 % for OER compared to the polyhedra (AQE: 1.6 %) and SrTaO 2 N polycrystals (AQE: 0.6 %). The enhanced performance from the nanoplates arises from their morphology and lower defect density. These results highlight the importance of developing new synthetic routes to high quality oxynitrides. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Enhanced Photoactivity from Single-Crystalline SrTaO2 N Nanoplates Synthesized by Topotactic Nitridation.

Science.gov (United States)

Fu, Jie; Skrabalak, Sara E

2017-11-06

There are few methods yielding oxynitride crystals with defined shape, yet shape-controlled crystals often give enhanced photoactivity. Herein, single-crystalline SrTaO 2 N nanoplates and polyhedra are achieved selectively. Central to these synthetic advances is the crystallization pathways used, in which single-crystalline SrTaO 2 N nanoplates form by topotactic nitridation of aerosol-prepared Sr 2 Ta 2 O 7 nanoplates and SrTaO 2 N polyhedra form by flux-assisted nitridation of the nanoplates. Evaluation of these materials for the oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) showed improved performance for the SrTaO 2 N nanoplates, with a record apparent quantum efficiency (AQE) of 6.1 % for OER compared to the polyhedra (AQE: 1.6 %) and SrTaO 2 N polycrystals (AQE: 0.6 %). The enhanced performance from the nanoplates arises from their morphology and lower defect density. These results highlight the importance of developing new synthetic routes to high quality oxynitrides. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-Pressure-Induced Comminution and Recrystallization of CH3 NH3 PbBr3 Nanocrystals as Large Thin Nanoplates.

Science.gov (United States)

Yin, Tingting; Fang, Yanan; Chong, Wee Kiang; Ming, Koh Teck; Jiang, Shaojie; Li, Xianglin; Kuo, Jer-Lai; Fang, Jiye; Sum, Tze Chien; White, Timothy J; Yan, Jiaxu; Shen, Ze Xiang

2018-01-01

High pressure (HP) can drive the direct sintering of nanoparticle assemblies for Ag/Au, CdSe/PbS nanocrystals (NCs). Instead of direct sintering for the conventional nanocrystals, this study experimentally observes for the first time high-pressure-induced comminution and recrystallization of organic-inorganic hybrid perovskite nanocrystals into highly luminescent nanoplates with a shorter carrier lifetime. Such novel pressure response is attributed to the unique structural nature of hybrid perovskites under high pressure: during the drastic cubic-orthorhombic structural transformation at ≈2 GPa, (301) the crystal plane fully occupied by organic molecules possesses a higher surface energy, triggering the comminution of nanocrystals into nanoslices along such crystal plane. Beyond bulk perovskites, in which pressure-induced modifications on crystal structures and functional properties will disappear after pressure release, the pressure-formed variants, i.e., large (≈100 nm) and thin (perovskite nanoplates, are retained and these exhibit simultaneous photoluminescence emission enhancing (a 15-fold enhancement in the photoluminescence) and carrier lifetime shortening (from ≈18.3 ± 0.8 to ≈7.6 ± 0.5 ns) after releasing of pressure from 11 GPa. This pressure-induced comminution of hybrid perovskite NCs and a subsequent amorphization-recrystallization treatment offer the possibilities of engineering the advanced hybrid perovskites with specific properties. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

On the Lyapunov stability of a plane parallel convective flow of a binary mixture

Directory of Open Access Journals (Sweden)

Giuseppe Mulone

1991-05-01

Full Text Available The nonlinear stability of plane parallel convective flows of a binary fluid mixture in the Oberbeck-Boussinesq scheme is studied in the stress-free boundary case. Nonlinear stability conditions independent of Reynolds number are proved.

GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process

International Nuclear Information System (INIS)

Nevedomskii, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.

2009-01-01

Epitaxial GaAs layers containing InAs semiconductor quantum dots and As metal quantum dots are grown by molecular beam epitaxy. The InAs quantum dots are formed by the Stranskii-Krastanow mechanism, whereas the As quantum dots are self-assembled in the GaAs layer grown at low temperature with a large As excess. The microstructure of the samples is studied by transmission electron microscopy. It is established that the As metal quantum dots formed in the immediate vicinity of the InAs semiconductor quantum dots are larger in size than the As quantum dots formed far from the InAs quantum dots. This is apparently due to the effect of strain fields of the InAs quantum dots upon the self-assembling of As quantum dots. Another phenomenon apparently associated with local strains around the InAs quantum dots is the formation of V-like defects (stacking faults) during the overgrowth of the InAs quantum dots with the GaAs layer by low-temperature molecular beam epitaxy. Such defects have a profound effect on the self-assembling of As quantum dots. Specifically, on high-temperature annealing needed for the formation of large-sized As quantum dots by Ostwald ripening, the V-like defects bring about the dissolution of the As quantum dots in the vicinity of the defects. In this case, excess arsenic most probably diffuses towards the open surface of the sample via the channels of accelerated diffusion in the planes of stacking faults.

Liquid-liquid interface assisted synthesis of size- and thickness-controlled Ag nanoplates

International Nuclear Information System (INIS)

Jin Mingshang; Kuang Qin; Han Xiguang; Xie Shuifen; Xie Zhaoxiong; Zheng Lansun

2010-01-01

Here we proposed a synthetic method of high-purity Ag nanoplates by the reduction of aqueous Ag + ions at the aqueous-organic interface with the reductant ferrocene. We demonstrated that the as-prepared Ag nanoplates can be widely tunable from 600 nm to 7 μm in size and from 10 to 35 nm in thickness, simply by adjusting the component of organic phase. To our knowledge, there are few methods to tailor the size and the thickness of metal nanoplates in such a large range although many efforts have been made aiming to realize it. Our proposed synthetic strategy is rapid, template-free, seed-less, and high-yield, and could be applied to synthesize analogous two-dimensional nanostructures of other noble metals, such as Pt, Au, and Pd. - Graphical abstract: High-purity Ag nanoplates were synthesized by the reduction of aqueous Ag + ions at the aqueous-organic interface with the reductant ferrocene, the size and thickness of which were widely tunable.

Growth and electrical characterization of Zn-doped InAs and InAs{sub 1-x}Sb{sub x}

Energy Technology Data Exchange (ETDEWEB)

Venter, A., E-mail: andre.venter@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth (South Africa); Shamba, P.; Botha, L.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth (South Africa)

2009-06-01

The electrical properties of Zn doped InAs and InAsSb layers grown on semi-insulating GaAs by metal organic vapour phase epitaxy, using dimethyl zinc as the p-type dopant source, have been studied. The influence of dopant flow rate, V/III ratio and substrate orientation on the electrical properties of these InAs and InAs{sub 1-x}Sb{sub x} layers have been studied at a few appropriate growth temperatures. A promising group V source, tertiary butyl arsenic was used as an alternative to arsenic hydride in the case of InAs growth. The electrical properties of the InAs and InAs{sub 1-x}Sb{sub x} epitaxial layers were mainly studied by the Hall effect. However, surface accumulation in these materials results in deceptive Hall results being extracted. A two layer model (assuming the layer to consist of two parallel conducting paths viz. surface and bulk) has therefore been used to extract sensible transport properties. In addition, conventional Hall measurements ignores the high electron to hole mobility ratio in InAs and InAsSb leading to erroneous transport properties.

Fabrication of Self-Standing Silver Nanoplate Arrays by Seed-Decorated Electrochemical Route and Their Structure-Induced Properties

Directory of Open Access Journals (Sweden)

Guangqiang Liu

2013-01-01

Full Text Available We present an electrochemical route to synthesize silver nanoplates on seed-decorated Indium tin oxide (ITO glass substrate. The nanoplates are several tens of to several hundred nanometers in dimension. The density of nanoplates covered on the substrate can be controlled well by adjusting the amounts of seed. All the nanoplates are standing on the substrate uniformly even at very high density. Silver nanoplate arrays displayed an extraordinary superhydrophobicity after chemical modification and can serve as highly active surface-enhanced Raman scattering (SERS substrates for microdetection. The arrays can also be used as electrodes for electrochemical capacitor with high power density.

One-Pot Synthesis of Cu2ZnSnSe4 Nanoplates and their Visible-Light-Driven Photocatalytic Activity

Science.gov (United States)

Han, Zhenzhen; Li, Nan; Shi, Aihua; Wang, Haohua; Ma, Feng; Lv, Yi; Wu, Rongqian

2018-01-01

A SeO2 ethanol solution as the facile precursor has been used for the preparation of quaternary Cu2ZnSnSe4 (CZTSe) nanoplates. Monodispersed single-phase CZTSe nanoplates have been prepared successfully by a facile one-pot thermal chemical method. The as-prepared CZTSe nanoplates show uniform morphology with a bandgap of 1.4 eV. As a proof of concept, the CZTSe nanoplates have been used as a visible-light-driven photocatalyst for Rhodamine B dye degradation and show high photocatalytic activity and stability. The excellent dye removal is mainly ascribed to the efficient light utilization of CZTSe nanoplates.

Graphene nanoplate-MnO2 composites for supercapacitors: a controllable oxidation approach

Science.gov (United States)

Huang, Huajie; Wang, Xin

2011-08-01

Graphene nanoplate-MnO2 composites have been synthesized by oxidising part of the carbon atoms in the framework of graphene nanoplates at ambient temperature. The composites were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry (CV). It was found that the oxidation extent of the carbon atoms in the graphene framework in these composites was dependent on the reaction time, which also influenced their microstructure, morphology and electrochemical properties. Compared with MnO2 nanolamellas, the nanocomposite prepared with a reaction time of 3 h reveals better electrochemical properties as a supercapacitor electrode material.Graphene nanoplate-MnO2 composites have been synthesized by oxidising part of the carbon atoms in the framework of graphene nanoplates at ambient temperature. The composites were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry (CV). It was found that the oxidation extent of the carbon atoms in the graphene framework in these composites was dependent on the reaction time, which also influenced their microstructure, morphology and electrochemical properties. Compared with MnO2 nanolamellas, the nanocomposite prepared with a reaction time of 3 h reveals better electrochemical properties as a supercapacitor electrode material. Electronic supplementary information (ESI) available: Fig. S1, AFM image (5 μm × 5 μm) of graphene nanoplate-MnO2 composite obtained at 3 h; Fig. S2, nitrogen adsorption/desorption isotherm of graphene nanoplate-MnO2 composite obtained at 3 h. See DOI: 10.1039/c1nr10229j

Formation of Silver Nanoplates Layer on Amino Group Grafted Silica Coatings

Directory of Open Access Journals (Sweden)

Jurgis PILIPAVICIUS

2016-05-01

Full Text Available In this study the self-arrangement of Ag nanoplates on (3-Aminopropyltriethoxysilane (APTES silanized silica coatings was investigated. Silica coatings were made by sol-gel method and silanized in two different ways. The first one includes silanization in acidic 2-propanol solution, the other one – in dry toluene. Coatings were silanized by using different amounts of APTES in case of silanization in 2-propanol. Silver nanoplates layer of functionalized silica coatings was obtained via self-assembly. Coatings were investigated by atomic force microscopy (AFM, water contact angle measurements (CA, FT-IR analysis, and scanning electron microscopy (SEM. Research showed that dense Ag nanoplates arrangement occurs when there is a high amount of amino groups on the surface.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.8405

Enhanced photoactivity from single-crystalline SrTaO{sub 2}N nanoplates synthesized by topotactic nitridation

Energy Technology Data Exchange (ETDEWEB)

Fu, Jie; Skrabalak, Sara E. [Department of Chemistry, Indiana University, Bloomington, IN (United States)

2017-11-06

There are few methods yielding oxynitride crystals with defined shape, yet shape-controlled crystals often give enhanced photoactivity. Herein, single-crystalline SrTaO{sub 2}N nanoplates and polyhedra are achieved selectively. Central to these synthetic advances is the crystallization pathways used, in which single-crystalline SrTaO{sub 2}N nanoplates form by topotactic nitridation of aerosol-prepared Sr{sub 2}Ta{sub 2}O{sub 7} nanoplates and SrTaO{sub 2}N polyhedra form by flux-assisted nitridation of the nanoplates. Evaluation of these materials for the oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) showed improved performance for the SrTaO{sub 2}N nanoplates, with a record apparent quantum efficiency (AQE) of 6.1 % for OER compared to the polyhedra (AQE: 1.6 %) and SrTaO{sub 2}N polycrystals (AQE: 0.6 %). The enhanced performance from the nanoplates arises from their morphology and lower defect density. These results highlight the importance of developing new synthetic routes to high quality oxynitrides. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Van der Waals epitaxy and photoresponse of hexagonal tellurium nanoplates on flexible mica sheets.

Science.gov (United States)

Wang, Qisheng; Safdar, Muhammad; Xu, Kai; Mirza, Misbah; Wang, Zhenxing; He, Jun

2014-07-22

Van der Waals epitaxy (vdWE) is of great interest due to its extensive applications in the synthesis of ultrathin two-dimensional (2D) layered materials. However, vdWE of nonlayered functional materials is still not very well documented. Here, although tellurium has a strong tendency to grow into one-dimensional nanoarchitecture due to its chain-like structure, we successfully realize 2D hexagonal tellurium nanoplates on flexible mica sheets via vdWE. Chemically inert mica surface is found to be crucial for the lateral growth of hexagonal tellurium nanoplates since it (1) facilitates the migration of tellurium adatoms along mica surface and (2) allows a large lattice mismatch. Furthermore, 2D tellurium hexagonal nanoplates-based photodetectors are in situ fabricated on flexible mica sheets. Efficient photoresponse is obtained even after bending the device for 100 times, indicating 2D tellurium hexagonal nanoplates-based photodetectors on mica sheets have a great application potential in flexible and wearable optoelectronic devices. We believe the fundamental understanding of vdWE effect on the growth of 2D tellurium hexagonal nanoplate can pave the way toward leveraging vdWE as a useful channel to realize the 2D geometry of other nonlayered materials.

Stimulated Emission from InAs (GaAs Monolayers Stacks Embedded in Al0.33Ga0.67As Ective Region

Directory of Open Access Journals (Sweden)

Dusan Pudis

2002-01-01

Full Text Available Our study is focused on the optical and electronic properties of InAs (GaAs monolayers embedded in Al0.33GA0.67As barrier layers investigated by temperature dependencies of electroluminescence spectra. The experimental results obtained from low temperature electroluminescence measurements of InAs (GaAs/Al0.33GA0.67As revealed the excellent emission spectra in the visib le range 630-690 nm. The stimulated emission from these structures across their cleavage planes has been observed at low  temperatures what is highly interesting for potential device applications.

Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors

Science.gov (United States)

Savelyev, Igor; Blumin, Marina; Wang, Shiliang; Ruda, Harry E.

2017-01-01

Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of electrons, holds properties beneficial for creating high performance sensors that can be used in applications such as point-of-care testing for patients diagnosed with chronic diseases. Here, we propose devices based on a parallel configuration of InAs nanowires and investigate sensor responses from measurements of conductance over time and FET characteristics. The devices were tested in controlled concentrations of vapour containing acetic acid, 2-butanone and methanol. After adsorption of analyte molecules, trends in the transient current and transfer curves are correlated with the nature of the surface interaction. Specifically, we observed proportionality between acetic acid concentration and relative conductance change, off current and surface charge density extracted from subthreshold behaviour. We suggest the origin of the sensing response to acetic acid as a two-part, reversible acid-base and redox reaction between acetic acid, InAs and its native oxide that forms slow, donor-like states at the nanowire surface. We further describe a simple model that is able to distinguish the occurrence of physical versus chemical adsorption by comparing the values of the extracted surface charge density. These studies demonstrate that InAs nanowires can produce a multitude of sensor responses for the purpose of developing next generation, multi-dimensional sensor applications. PMID:28714903

Solution of task related to control of swiss-type automatic lathe to get planes parallel to part axis

Science.gov (United States)

Tabekina, N. A.; Chepchurov, M. S.; Evtushenko, E. I.; Dmitrievsky, B. S.

2018-05-01

The work solves the problem of automation of machining process namely turning to produce parts having the planes parallel to an axis of rotation of part without using special tools. According to the results, the availability of the equipment of a high speed electromechanical drive to control the operative movements of lathe machine will enable one to get the planes parallel to the part axis. The method of getting planes parallel to the part axis is based on the mathematical model, which is presented as functional dependency between the conveying velocity of the driven element and the time. It describes the operative movements of lathe machine all over the tool path. Using the model of movement of the tool, it has been found that the conveying velocity varies from the maximum to zero value. It will allow one to carry out the reverse of the drive. The scheme of tool placement regarding the workpiece has been proposed for unidirectional movement of the driven element at high conveying velocity. The control method of CNC machines can be used for getting geometrically complex parts on the lathe without using special milling tools.

Hexagonal-like Nb2O5 Nanoplates-Based Photodetectors and Photocatalyst with High Performances

Science.gov (United States)

Liu, Hui; Gao, Nan; Liao, Meiyong; Fang, Xiaosheng

2015-01-01

Ultraviolet (UV) photodetectors are important tools in the fields of optical imaging, environmental monitoring, and air and water sterilization, as well as flame sensing and early rocket plume detection. Herein, hexagonal-like Nb2O5 nanoplates are synthesized using a facile solvothermal method. UV photodetectors based on single Nb2O5 nanoplates are constructed and the optoelectronic properties have been probed. The photodetectors show remarkable sensitivity with a high external quantum efficiency (EQE) of 9617%, and adequate wavelength selectivity with respect to UV-A light. In addition, the photodetectors exhibit robust stability and strong dependence of photocurrent on light intensity. Also, a low-cost drop-casting method is used to fabricate photodetectors based on Nb2O5 nanoplate film, which exhibit singular thermal stability. Moreover, the hexagonal-like Nb2O5 nanoplates show significantly better photocatalytic performances in decomposing Methylene-blue and Rhdamine B dyes than commercial Nb2O5.

Synthesis and optical properties of CuS nanoplate-based architectures by a solvothermal method

International Nuclear Information System (INIS)

Li Fei; Kong Tao; Bi Wentuan; Li Dachang; Li Zhen; Huang Xintang

2009-01-01

The controlled synthesis of copper sulfide (CuS) nanoplate-based architectures in different solvents has been realized at low cost by simply reaction of Cu(NO 3 ) 2 .3H 2 O and S under solvothermal conditions without the use of any template. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), UV-vis spectrometer and fluorescence measurement were used to characterize the products. The products were all in hexagonal phase with high crystallinity and the morphology was significantly influenced by the solvents. The CuS products synthesized in dimethylformamide (DMF) were nanoplates and the samples prepared in ethanol were flower-like morphology composed of large numbers of nanoplates, but those synthesized in ethylene glycol (EG) were CuS architectures with high symmetry made up of several nanoplates arranged in a certain mode. The optical properties were investigated and the growth mechanisms of these CuS crystals were also proposed.

Designing Tripodal and Triangular Gadolinium Oxide Nanoplates and Self-Assembled Nanofibrils as Potential Multimodal Bioimaging Probes

Energy Technology Data Exchange (ETDEWEB)

Paik, T; Gordon, TR; Prantner, AM; Yun, H; Murray, CB

2013-03-01

Here, we report the shape-controlled synthesis of tripodal and triangular gadolinium oxide (Gd2O3) nanoplates. In the presence of lithium ions, the shape of the nanocrystals is readily controlled by tailoring reaction parameters such as temperature and time. We observe that the morphology transforms from an initial tripodal shape to a triangular shape with increasing reaction time or elevated temperatures. Highly uniform Gd2O3 nanoplates are self-assembled into nanofibril-like liquid-crystalline superlattices with long-range orientational and positional order. In addition, shape-directed self-assemblies are investigated by tailoring the aspect ratio of the arms of the Gd2O3 nanoplates. Due to a strong paramagnetic response, Gd2O3 nanocrystals are excellent candidates for MRI contrast agents and also can be doped with rare-earth ions to form nanophosphors, pointing to their potential in multimodal imaging. In this work, we investigate the MR relaxometry at high magnetic fields (9,4 and 14.1 T) and the optical properties including near-IR to visible upconversion luminescence and X-ray excited optical luminescence of doped Gd2O3 nanoplates. The complex shape of Gd2O3 nanoplates, coupled with their magnetic properties and their ability to phosphoresce under NIR or X-ray excitation which penetrate deep into tissue, makes these nanoplates a promising platform for multimodal imaging in biomedical applications.

Plane parallel radiance transport for global illumination in vegetation

Energy Technology Data Exchange (ETDEWEB)

Max, N.; Mobley, C.; Keating, B.; Wu, E.H.

1997-01-05

This paper applies plane parallel radiance transport techniques to scattering from vegetation. The leaves, stems, and branches are represented as a volume density of scattering surfaces, depending only on height and the vertical component of the surface normal. Ordinary differential equations are written for the multiply scattered radiance as a function of the height above the ground, with the sky radiance and ground reflectance as boundary conditions. They are solved using a two-pass integration scheme to unify the two-point boundary conditions, and Fourier series for the dependence on the azimuthal angle. The resulting radiance distribution is used to precompute diffuse and specular `ambient` shading tables, as a function of height and surface normal, to be used in rendering, together with a z-buffer shadow algorithm for direct solar illumination.

Size-dependent free vibration and dynamic analyses of piezo-electro-magnetic sandwich nanoplates resting on viscoelastic foundation

Science.gov (United States)

Arefi, Mohammad; Zenkour, Ashraf M.

2017-09-01

In this paper, size-dependent free vibration analysis of a sandwich nanoplate is presented. The sandwich nanoplate is including an elastic nano core and two piezo-electro-magnetic face-sheets as sensor and actuator actuated by electric and magnetic potentials. The sandwich nanoplate is resting on visco-Pasternak's foundation. Hamilton's principle is employed to derive the governing equations of motion based on Kirchhoff plate and nonlocal elasticity theory. The numerical results are presented to study the influence of important parameters of the problem such as applied electric and magnetic potentials, nonlocal parameter and visco-Pasternak's parameters. Furthermore, the influence of various boundary conditions is discussed on the vibration characteristics of the sandwich nanoplate.

Facile Br- assisted hydrothermal synthesis of Bi2MoO6 nanoplates with enhanced visible-light photocatalytic activity

International Nuclear Information System (INIS)

Zhang, Peng; Teng, Xiaoxu; Liu, Dongsheng; Fu, Liang; Xie, Hualin; Zhang, Guoqing; Ding, Shimin

2017-01-01

Bi 2 MoO 6 nanoplates have been controllably synthesized via a facile hydrothermal process with the assistance of Br - containing surfactant cetyltrimethylammonium bromide (CTAB) or KBr. A remarkable enhancement in the visible-light-driven photocatalytic degradation of Rhodamine B was observed. It was found that reaction temperature and surfactant play crucial roles in the formation and properties of the Bi 2 MoO 6 nanoplates. The best results as photocatalyst were obtained with the sample hydrothermally synthesized at 150 C with the assistance of CTAB. The improved photocatalytic performance could be ascribed to the {001}-oriented nanostructure of the Bi 2 MoO 6 nanoplates. KBr-templated Bi 2 MoO 6 nanoplates also showed better photocatalytic efficiency compared with that of flower-like Bi 2 MoO 6 but inferior to that of CTAB-templated Bi 2 MoO 6 nanoplates. (orig.)

Experimental investigation on in-plane/out-of-plane vortex-induced vibrations of curved cylinder in parallel and perpendicular flows

Science.gov (United States)

Srinil, Narakorn; Ma, Bowen; Zhang, Licong

2018-05-01

This study is motivated by an industrial need to better understand the vortex-induced vibration (VIV) of a curved structure subject to current flows with varying directions whose data for model calibration and validation are lacking. In this paper, new experimental investigations on the two-degree-of-freedom in-plane/out-of-plane VIV of a rigid curved circular cylinder immersed in steady and uniform free-stream flows are presented. The principal objective is to examine how the approaching flow direction versus the cylinder curvature plane affects cross-flow and in-line VIV and the associated hydrodynamic properties. This is achieved by testing the curved cylinder in 3 different flow orientations comprising the parallel flows aligned with the curvature vertical plane in convex and concave configurations, and the flows perpendicular to the curvature plane. The case of varying flow velocities in a subcritical flow range with a maximum Reynolds number of about 50,000 is considered for the curved cylinder with a low mass ratio and damping ratio. Experimental results are presented and discussed in terms of the cylinder response amplitudes, inclination angles, mean displacements, motion trajectories, oscillation frequencies, hydrodynamic forces, relative phases, fluid excitation and added inertia coefficients. Comparisons with other experimental results of curved and straight cylinder VIV are also presented. The experiments highlight the important effects of cylinder curvature versus flow orientation on the combined cross-flow/in-line VIV. The maximum (minimum) responses occur in the perpendicular (convex) flow case whereas the extended lower-branch responses occur in the concave flow case. For perpendicular flows, some meaningful features are observed, including the appearances of cross-flow mean displacements and asymmetric eight-shaped motion trajectories due to multiple 2:1:1 resonances where two out-of-plane and one in-plane dominant frequencies are simultaneously

Time-dependent radiation transfer with rayleigh scattering in finite plane-parallel media using pomraning-eddington approximation

International Nuclear Information System (INIS)

El-Wakil, S.A.; Sallah, M.; Degheidy, A.R.

2005-01-01

The time-dependent radiation transfer equation in plane geometry with Rayleigh scattering is studied. The traveling wave transformation is used to obtain the corresponding stationary-like equation. Pomraning-Eddington approximation is then used to calculate the radiation intensity in finite plane-parallel media. Numerical results and shielding calculations are shown for reflectivity and transmissivity at different times. The medium is assumed to have specular-reflecting boundaries. For the sake of comparison, two different weight functions are introduced and to force the boundary conditions to be fulfilled

Wave propagation analysis of a size-dependent magneto-electro-elastic heterogeneous nanoplate

Science.gov (United States)

Ebrahimi, Farzad; Dabbagh, Ali; Reza Barati, Mohammad

2016-12-01

The analysis of the wave propagation behavior of a magneto-electro-elastic functionally graded (MEE-FG) nanoplate is carried out in the framework of a refined higher-order plate theory. In order to take into account the small-scale influence, the nonlocal elasticity theory of Eringen is employed. Furthermore, the material properties of the nanoplate are considered to be variable through the thickness based on the power-law form. Nonlocal governing equations of the MEE-FG nanoplate have been derived using Hamilton's principle. The results of the present study have been validated by comparing them with previous researches. An analytical solution of governing equations is performed to obtain wave frequencies, phase velocities and escape frequencies. The effect of different parameters, such as wave number, nonlocal parameter, gradient index, magnetic potential and electric voltage on the wave dispersion characteristics of MEE-FG nanoscale plates is studied in detail.

Size-dependent electro-magneto-elastic bending analyses of the shear-deformable axisymmetric functionally graded circular nanoplates

Science.gov (United States)

Arefi, Mohammad; Zenkour, Ashraf M.

2017-10-01

This paper develops nonlocal elasticity equations and magneto-electro-elastic relations to size-dependent electro-magneto-elastic bending analyses of the functionally graded axisymmetric circular nanoplates based on the first-order shear deformation theory. All material properties are graded along the thickness direction based on exponential varying. It is assumed that a circular nanoplate is made from piezo-magnetic materials. The energy method and Ritz approach is employed for the derivation of governing equations of electro-magneto-elastic bending and the solution of the problem, respectively. The nanoplate is subjected to applied electric and magnetic potentials at top and transverse loads while it is rested on Pasternak's foundation. Some important numerical results are presented in various figures to show the influence of applied electric and magnetic potentials, small scale parameter and inhomogeneous index of an exponentially graded nanoplate.

Verification of the absorbed dose values determined with plane parallel ionization chambers in therapeutic electron beams using ferrous sulfate dosimetry

International Nuclear Information System (INIS)

Plaetsen, A. van der; Thierens, H.; Palmans, H.

2000-01-01

Absolute and relative dosimetry measurements in clinical electron beams using different detectors were performed at a Philips SL18 accelerator. For absolute dosimetry, ionization chamber measurements with the PTW Markus and PTW Roos plane parallel chambers were performed in water following the recommendations of the TRS-381 Code of Practice, using different options for chamber calibration. The dose results obtained with these ionization chambers using the electron beam calibration method were compared with the dose response of the ferrous sulphate (Fricke) chemical dosimeter. The influence of the choice of detector type on the determination of physical quantities necessary for absolute dose determination was investigated and discussed. Results for d max , R 50 and R p were in agreement within statistical uncertainties when using a diode, diamond or plane parallel chamber. The effective point of measurement for the Markus chamber is found to be shifted 0.5 mm from the front surface of the cavity. Fluence correction factors, h m , for dose determination in electron beams using a PMMA phantom were determined experimentally for both plane parallel chamber types. (author)

Line-plane broadcasting in a data communications network of a parallel computer

Science.gov (United States)

Archer, Charles J.; Berg, Jeremy E.; Blocksome, Michael A.; Smith, Brian E.

2010-06-08

Methods, apparatus, and products are disclosed for line-plane broadcasting in a data communications network of a parallel computer, the parallel computer comprising a plurality of compute nodes connected together through the network, the network optimized for point to point data communications and characterized by at least a first dimension, a second dimension, and a third dimension, that include: initiating, by a broadcasting compute node, a broadcast operation, including sending a message to all of the compute nodes along an axis of the first dimension for the network; sending, by each compute node along the axis of the first dimension, the message to all of the compute nodes along an axis of the second dimension for the network; and sending, by each compute node along the axis of the second dimension, the message to all of the compute nodes along an axis of the third dimension for the network.

Raman scattering investigation of Bi2Te3 hexagonal nanoplates prepared by a solvothermal process in the absence of NaOH

International Nuclear Information System (INIS)

Liang Yujie; Wang Wenzhong; Zeng Baoqing; Zhang Guling; Huang Jing; Li Jin; Li Te; Song Yangyang; Zhang Xiuyu

2011-01-01

Research highlights: → Hexagonal Bi 2 Te 3 thin nanoplates were synthesized by a simple solvothermal method. → Optical properties of the nanoplates were investigated by micro-Raman spectroscopy. → Infrared (IR) active mode (A 1u ) is greatly activated in Raman scattering spectrum. → Infrared (IR) active mode (A 1u ) shows up in Raman spectrum of hexagonal nanoplates. → Raman spectrum clearly shows crystal symmetry breaking of hexagonal nanoplates. - Abstract: Hexagonal Bi 2 Te 3 nanoplates were synthesized by a simple solvothermal process in the absence of NaOH. The composition, morphology and size of the as-prepared products were characterized by powder X-ray diffraction (XRD) and transmission electron microscopy (TEM). Raman scattering optical properties of the as-prepared Bi 2 Te 3 nanoplates were investigated by micro-Raman spectroscopy. The Raman spectrum shows that infrared (IR) active mode (A 1u ), which must be odd parity and is Raman forbidden for bulk crystal due to its inversion symmetry, is greatly activated and shown up clearly in Raman scattering spectrum. We attribute the appearance of infrared active (A 1u ) in Raman spectrum to crystal symmetry breaking of Bi 2 Te 3 hexagonal nanoplates. The as-grown Bi 2 Te 3 hexagonal nanoplates, exhibiting novel Raman optical properties compared with bulk crystals, may find potential applications in thermoelectric devices.

Room-temperature synthesis of gold nanoparticles and nanoplates using Shewanella algae cell extract

International Nuclear Information System (INIS)

Ogi, Takashi; Saitoh, Norizoh; Nomura, Toshiyuki; Konishi, Yasuhiro

2010-01-01

Biosynthesis of spherical gold nanoparticles and gold nanoplates was achieved at room temperature and pH 2.8 when cell extract from the metal-reducing bacterium Shewanella algae was used as both a reducing and shape-controlling agent. Cell extract, prepared by sonicating a suspension of S. algae cells, was capable of reducing 1 mol/m 3 aqueous AuCl 4 - ions into elemental gold within 10 min when H 2 gas was provided as an electron donor. The time interval lapsed since the beginning of the bioreductive reaction was found to be an important factor in controlling the morphology of biogenic gold nanoparticles. After 1 h, there was a large population of well-dispersed, spherical gold nanoparticles with a mean size of 9.6 nm. Gold nanoplates with an edge length of 100 nm appeared after 6 h, and 60% of the total nanoparticle population was due to gold nanoplates with an edge length of 100-200 nm after 24 h. The yield of gold nanoplates prepared with S. algae extract was four times higher than that prepared with resting cells of S. algae. The resulting biogenic gold nanoparticle suspensions showed a large variation in color, ranging from pale pink to purple due to changes in nanoparticle morphology.

Room-temperature synthesis of gold nanoparticles and nanoplates using Shewanella algae cell extract

Energy Technology Data Exchange (ETDEWEB)

Ogi, Takashi; Saitoh, Norizoh; Nomura, Toshiyuki; Konishi, Yasuhiro, E-mail: yasuhiro@chemeng.osakafu-u.ac.j [Osaka Prefecture University, Department of Chemical Engineering (Japan)

2010-09-15

Biosynthesis of spherical gold nanoparticles and gold nanoplates was achieved at room temperature and pH 2.8 when cell extract from the metal-reducing bacterium Shewanella algae was used as both a reducing and shape-controlling agent. Cell extract, prepared by sonicating a suspension of S. algae cells, was capable of reducing 1 mol/m{sup 3} aqueous AuCl{sub 4}{sup -} ions into elemental gold within 10 min when H{sub 2} gas was provided as an electron donor. The time interval lapsed since the beginning of the bioreductive reaction was found to be an important factor in controlling the morphology of biogenic gold nanoparticles. After 1 h, there was a large population of well-dispersed, spherical gold nanoparticles with a mean size of 9.6 nm. Gold nanoplates with an edge length of 100 nm appeared after 6 h, and 60% of the total nanoparticle population was due to gold nanoplates with an edge length of 100-200 nm after 24 h. The yield of gold nanoplates prepared with S. algae extract was four times higher than that prepared with resting cells of S. algae. The resulting biogenic gold nanoparticle suspensions showed a large variation in color, ranging from pale pink to purple due to changes in nanoparticle morphology.

Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

DEFF Research Database (Denmark)

Kriegner, Dominik; Panse, Christian; Mandl, Bernhard

2011-01-01

The atomic distances in hexagonal polytypes of III−V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende......, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tends to stretch the distances of atomic layers...

Electrical transport properties of large, individual NiCo{sub 2}O{sub 4} nanoplates

Energy Technology Data Exchange (ETDEWEB)

Hu, Linfeng; Wu, Limin; Hu, Xinhua; Fang, Xiaosheng [Department of Materials Science, Fudan University, Shanghai (China); Liao, Meiyong [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), Namiki, Tsukuba, Ibaraki (Japan)

2012-03-07

Understanding the electrical transport properties of individual semiconductor nanostructures is crucial to advancing their practical applications in high-performance nanodevices. Large-sized individual nanostructures with smooth surfaces are preferred because they can be easily made into nanodevices using conventional photolithography procedures rather than having to rely on costly and complex electron-beam lithography techniques. In this study, micrometer-sized NiCo{sub 2}O{sub 4} nanoplates are successfully prepared from their corresponding hydroxide precursor using a quasi-topotactic transformation. The Co/Ni atomic arrangement shows no changes during the transformation from the rhombohedral LDH precursor (space group R anti 3 m) to the cubic NiCo{sub 2}O{sub 4} spinel (space group Fd anti 3 m), and the nanoplate retains its initial morphology during the conversion process. In particular, electrical transport within an individual NiCo{sub 2}O{sub 4} nanoplate is further investigated. The mechanisms of electrical conduction in the low-temperature range (T < 100 K) can be explained in terms of the Mott's variable-range hopping model. At high temperatures (T > 100 K), both the variable-range hopping and nearest-neighbor hopping mechanisms contribute to the electrical transport properties of the NiCo{sub 2}O{sub 4} nanoplate. These initial results will be useful to understanding the fundamental characteristics of these nanoplates and to designing functional nanodevices from NiCo{sub 2}O{sub 4} nanostructures. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Size-dependent thermal stability analysis of graded piezomagnetic nanoplates on elastic medium subjected to various thermal environments

Science.gov (United States)

Ebrahimi, Farzad; Barati, Mohammad Reza

2016-10-01

This paper investigates the thermal stability of magneto-electro-thermo-elastic functionally graded (METE-FG) nanoplates based on the nonlocal theory and a refined plate model. The METE-FG nanoplate is subjected to the external electric potential, magnetic potential and different temperature rises. Interaction of elastic medium with the METE-FG nanoplate is modeled via Winkler-Pasternak foundation model. The governing equations are derived by using the Hamilton principle and solved by using an analytical method to determine the critical buckling temperatures. To verify the validity of the developed model, the results of the present work are compared with those available in the literature. A detailed parametric study is conducted to study the influences of the nonlocal parameter, foundation parameters, temperature rise, external electric and magnetic potentials on the size-dependent thermal buckling characteristics of METE-FG nanoplates.

[Fluorescence Resonance Energy Transfer Detection of Cobalt Ions by Silver Triangular Nanoplates and Rhodamine 6G].

Science.gov (United States)

Zhang, Xiu-qing; Peng, Jun; Ling, Jian; Liu, Chao-juan; Cao, Qiu-e; Ding, Zhong-tao

2015-04-01

In the present paper, the authors studied fluorescence resonance energy transfer (FRET) phenomenon between silver triangular nanoplates and bovine serum albumin (BSA)/Rhodamine 6G fluorescence complex, and established a fluorescence method for the detection of cobalt ions. We found that when increasing the silver triangular nanoplates added to certain concentrations of fluorescent bovine serum albumin (BSA)/Rhodamine 6G complex, the fluorescence of Rhodamine 6G would be quenched up to 80% due to the FRET between the quencher and donor. However, in the presence of cobalt ions, the disassociation of the fluorescent complex from silver triangular nanoplates occurred and the fluorescence of the Rhodamine 6G recovered. The recovery of fluorescence intensity rate (I/I0) has a good relationship with the cobalt ion concentration (cCO2+) added. Thus, the authors developed a fluorescence method for the detection of cobalt ions based on the FRET of silver triangular nanoplates and Rhodamine 6G.

Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates.

Science.gov (United States)

Li, M Z; Wang, Z H; Yang, L; Pan, D S; Li, Da; Gao, Xuan; Zhang, Zhi-Dong

2018-05-14

Controlling the growth direction (planar vs. vertical) and surface-to-bulk ratio can lead to lots of unique properties for two-dimensional (2D) layered materials. We report a simple method to fabricate continuous films of vertical Bi2Se3 nanoplates on Si substrate and investigate the quantum transport properties of such films. In contrast to (001) oriented planar Bi2Se3 nanoplate film, vertical Bi2Se3 nanoplate films are enclosed by (015) facets, which possess high surface-to-bulk ratio that can enhance the quantum transport property of topological surface states. And by controlling the compactness of vertical Bi2Se3 nanoplates, we realized an effective tuning of the weak antilocalization (WAL) effect from topological surface states in Bi2Se3 films. Our work paves a way for exploring the unique transport properties of this unconventional structure topological insulator film. © 2018 IOP Publishing Ltd.

Synthesis of ultrathin face-centered-cubic Au@Pt and Au@Pd core-shell nanoplates from hexagonal-close-packed Au square sheets

KAUST Repository

Fan, Zhanxi

2015-03-17

The synthesis of ultrathin face-centered-cubic (fcc) Au@Pt rhombic nanoplates is reported through the epitaxial growth of Pt on hexagonal-close-packed (hcp) Au square sheets (AuSSs). The Pt-layer growth results in a hcp-to-fcc phase transformation of the AuSSs under ambient conditions. Interestingly, the obtained fcc Au@Pt rhombic nanoplates demonstrate a unique (101)f orientation with the same atomic arrangement extending from the Au core to the Pt shell. Importantly, this method can be extended to the epitaxial growth of Pd on hcp AuSSs, resulting in the unprecedented formation of fcc Au@Pd rhombic nanoplates with (101)f orientation. Additionally, a small amount of fcc (100)f-oriented Au@Pt and Au@Pd square nanoplates are obtained with the Au@Pt and Au@Pd rhombic nanoplates, respectively. We believe that these findings will shed new light on the synthesis of novel noble bimetallic nanostructures. Phase change: Ultrathin Au@Pt and Au@Pd core-shell nanoplates were prepared from Au square sheets. A phase transformation from hexagonal close-packed (hcp) to face-centered cubic (fcc) is observed upon coating the hcp Au square sheets with Pt or Pd under ambient conditions. The prepared fcc Au@Pt and Au@Pd rhombic nanoplates demonstrate unique (101)f orientation (picture shows a typical fcc Au@Pt rhombic nanoplate). © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Selective Magnetic Evolution of MnxFe1-xO Nanoplates

KAUST Repository

Song, Hyon-Min

2015-04-27

Iron-manganese oxide (MnxFe1-xO) nanoplates were prepared by thermal decomposition method. Irregular development of crystalline phases was observed with the increase of annealing temperature. Magnetic properties are in accordance with their respective crystalline phases, and the selective magnetic evolution from their rich magnetism of MnxFe1-xO and MnFe2O4 is achieved by controlling the annealing conditions. Rock-salt structure of MnxFe1-xO (space group Fm-3m) is observed in as-synthesized nanoplates, while MnFe2O4 and MnxFe1-xO with significant magnetic interactions between them are observed at 380 °C. In nanoplates annealed at 450 °C, soft ferrites of Mn0.48Fe2.52O4 with MnxFe1-xO are observed. It is assumed that the differential and early development of crystalline phase of MnxFe1-xO, and the inhomogeneous cation mixing between Mn and Fe cause this rather extraordinary magnetic development. In particular, the prone nature of divalent metal oxides to cation vacancy and the prolonged annealing time of 15 hours which enables ordering are also thought to contribute to these irregularities.

Selective Magnetic Evolution of MnxFe1-xO Nanoplates

KAUST Repository

Song, Hyon-Min; Zink, Jeffrey I.; Khashab, Niveen M.

2015-01-01

Iron-manganese oxide (MnxFe1-xO) nanoplates were prepared by thermal decomposition method. Irregular development of crystalline phases was observed with the increase of annealing temperature. Magnetic properties are in accordance with their respective crystalline phases, and the selective magnetic evolution from their rich magnetism of MnxFe1-xO and MnFe2O4 is achieved by controlling the annealing conditions. Rock-salt structure of MnxFe1-xO (space group Fm-3m) is observed in as-synthesized nanoplates, while MnFe2O4 and MnxFe1-xO with significant magnetic interactions between them are observed at 380 °C. In nanoplates annealed at 450 °C, soft ferrites of Mn0.48Fe2.52O4 with MnxFe1-xO are observed. It is assumed that the differential and early development of crystalline phase of MnxFe1-xO, and the inhomogeneous cation mixing between Mn and Fe cause this rather extraordinary magnetic development. In particular, the prone nature of divalent metal oxides to cation vacancy and the prolonged annealing time of 15 hours which enables ordering are also thought to contribute to these irregularities.

Vibration analysis of orthotropic circular and elliptical nano-plates embedded in elastic medium based on nonlocal Mindlin plate theory and using Galerkin method

International Nuclear Information System (INIS)

Anjomshoa, Amin; Tahani, Masoud

2016-01-01

In the present study a continuum model based on the nonlocal elasticity theory is developed for free vibration analysis of embedded ortho tropic thick circular and elliptical nano-plates rested on an elastic foundation. The elastic foundation is considered to behave like a Pasternak type of foundations. Governing equations for vibrating nano-plate are derived according to the Mindlin plate theory in which the effects of shear deformations of nano-plate are also included. The Galerkin method is then employed to obtain the size dependent natural frequencies of nano-plate. The solution procedure considers the entire nano-plate as a single super-continuum element. Effect of nonlocal parameter, lengths of nano-plate, aspect ratio, mode number, material properties, thickness and foundation on circular frequencies are investigated. It is seen that the nonlocal frequencies of the nano-plate are smaller in comparison to those from the classical theory and this is more pronounced for small lengths and higher vibration modes. It is also found that as the aspect ratio increases or the nanoplate becomes more elliptical, the small scale effect on natural frequencies increases. Further, it is observed that the elastic foundation decreases the influence of nonlocal parameter on the results. Since the effect of shear deformations plays an important role in vibration analysis and design of nano-plates, by predicting smaller values for fundamental frequencies, the study of these nano-structures using thick plate theories such as Mindlin plate theory is essential.

Dynamic analysis of isotropic nanoplates subjected to moving load using state-space method based on nonlocal second order plate theory

Energy Technology Data Exchange (ETDEWEB)

Nami, Mohammad Rahim [Shiraz University, Shiraz, Iran (Iran, Islamic Republic of); Janghorban, Maziar [Islamic Azad University, Marvdash (Iran, Islamic Republic of)

2015-06-15

In this work, dynamic analysis of rectangular nanoplates subjected to moving load is presented. In order to derive the governing equations of motion, second order plate theory is used. To capture the small scale effects, the nonlocal elasticity theory is adopted. It is assumed that the nanoplate is subjected to a moving concentrated load with the constant velocity V in the x direction. To solve the governing equations, state-space method is used to find the deflections of rectangular nanoplate under moving load. The results obtained here reveal that the nonlocality has significant effect on the deflection of rectangular nanoplate subjected to moving load.

The use of plane parallel ionization chambers in high energy electron and photon beams. An international code of practice for dosimetry

International Nuclear Information System (INIS)

1997-01-01

Research on plane-parallel ionization chambers since the IAEA code of practice (TRS-277) was published in 1987 has explained our knowledge on perturbation and other correction factors in ionization chamber, and also constructional details of these chambers have been shown to be important. Different countries have published, or are in the process of publishing, dosimetry recommendations which include specific procedures for the use of plan parallel ionization chambers. An international working group was formed under the auspieces of the IAEA, first to review the status and the actual validity of the code of practice and second to develop an international code of practice of the use of plane parallel ionization chambers in high energy electron and photon beams used in radiotherapy. This document fulfills the second taste. 153 refs, 21 figs, 18 tabs

Boundary-layer interactions in the plane-parallel incompressible flows

International Nuclear Information System (INIS)

Nguyen, Toan T; Sueur, Franck

2012-01-01

We study the inviscid limit problem of incompressible flows in the presence of both impermeable regular boundaries and a hypersurface transversal to the boundary across which the inviscid flow has a discontinuity jump. In the former case, boundary layers have been introduced by Prandtl as correctors near the boundary between the inviscid and viscous flows. In the latter case, the viscosity smoothes out the discontinuity jump by creating a transition layer which has the same amplitude and thickness as the Prandtl layer. In the neighbourhood of the intersection of the impermeable boundary and of the hypersurface, interactions between the boundary and the transition layers must then be considered. In this paper, we initiate a mathematical study of this interaction and carry out a strong convergence in the inviscid limit for the case of the plane-parallel flows introduced by Di Perna and Majda (1987 Commun. Math. Phys. 108 667–89). (paper)

Femtosecond upconverted photocurrent spectroscopy of InAs quantum nanostructures

Energy Technology Data Exchange (ETDEWEB)

Yamada, Yasuhiro [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Tex, David M.; Kanemitsu, Yoshihiko, E-mail: kanemitu@scl.kyoto-u.ac.jp [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Japan Science and Technology Agency, CREST, Kyoto University, Uji, Kyoto 611-0011 (Japan); Kamiya, Itaru [Toyota Technological Institute, Nagoya, Aichi 468-8511 (Japan)

2015-07-06

The carrier upconversion dynamics in InAs quantum nanostructures are studied for intermediate-band solar-cell applications via ultrafast photoluminescence and photocurrent (PC) spectroscopy based on femtosecond excitation correlation (FEC) techniques. Strong upconverted PC-FEC signals are observed under resonant excitation of quantum well islands (QWIs), which are a few monolayer-thick InAs quantum nanostructures. The PC-FEC signal typically decays within a few hundred picoseconds at room temperature, which corresponds to the carrier lifetime in QWIs. The photoexcited electron and hole lifetimes in InAs QWIs are evaluated as functions of temperature and laser fluence. Our results provide solid evidence for electron–hole–hole Auger process, dominating the carrier upconversion in InAs QWIs at room temperature.

Characterization and supercapacitor application of coin-like β-nickel hydroxide nanoplates

International Nuclear Information System (INIS)

Li Hongliang; Liu Suqin; Huang Chenghuan; Zhou Zhi; Li Yanhua; Fang Dong

2011-01-01

Coin-like nickel hydroxide nanoplates are synthesized via a simple coordination homogeneous precipitation method. The structure and morphology of as-prepared products are characterized by X-ray diffraction, Fourier transform infrared spectroscopy, transmission electron microscopy and scanning electron microscopy. It is demonstrated that the products are typical β-nickel hydroxide with bunches coin-like nanoplates morphology. The electrochemical properties of coin-like β-Ni(OH) 2 are examined by cyclic voltammetric, chronopotentiometry and electrochemical impedance spectroscope. Cyclic voltammetric studies show that the electrodes have good reversibility. A specific capacitance of 1532 F g −1 is obtained at a charge/discharge current density of 0.2 A g −1 .

Polarized and resonant Raman spectroscopy on single InAs nanowires

Science.gov (United States)

Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Dacal, L. C. O.; Madureira, J. R.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

2011-08-01

We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculations of the electronic band structure for wurtzite and zinc-blende InAs phases corroborate the observed values for the E1 transitions.

On the radiative-conductive solution in continuous heterogeneous grey plane-parallel participating medium

Energy Technology Data Exchange (ETDEWEB)

Valerio, Felipe L. [Instituto Federal de Educacao Ciencia e Tecnologia do Rio Grande do Sul (IFRGS), Bento Goncalves, RS (Brazil); Segatto, Cynthia F.; Vilhena, Marco T. [Universidade Federal do Rio Grande do Sul (PROMEC/UFRGS), Porto Alegre, RS (Brazil). Programa de Pos Graduacao em Engenharia Mecanica; Vargas, Rubem M.F., E-mail: felipe.valerio@bento.ifrs.edu.br, E-mail: cynthia.segatto@ufrgs.br, E-mail: marco.vilhena@ufrgs.br, E-mail: rvargas@pucrs.br [Pontificia Universidade Catolica do Rio Grande do Sul (PUC-RS), Porto Alegre, RS (Brazil). Programa de Pos Graduacao em Engenharia e Tecnologia de Materiais

2017-07-01

In this work we report an analytical representation for the solution of the radiative-conductive S{sub N} equation in a plane-parallel atmosphere in a heterogeneous domain considering an arbitrary continuous functions for the albedo. The basic idea consists in the application of the decomposition procedure to the non-linear radiative-conductive SN problem that are easily solved by the well know LTSN method. The length of the recursive system is properly chose in order to get a prescribed accuracy for the results. We also present numerical simulations for the results. (author)

INA-Rxiv: The Missing Puzzle in Indonesia’s Scientific Publishing Workflow

Science.gov (United States)

Rahim, R.; Irawan, D. E.; Zulfikar, A.; Hardi, R.; Arliman S, L.; Gultom, E. R.; Ginting, G.; Wahyuni, S. S.; Mesran, M.; Mahjudin, M.; Saputra, I.; Waruwu, F. T.; Suginam, S.; Buulolo, E.; Abraham, J.

2018-04-01

INA-Rxiv is the first Indonesia preprint server marking the new development initiated by the open science community. This study aimed at describing the development of INA-Rxiv and its conversations. It usedanalyzer of Inarxiv.id, WhatsApp Group Analyzer, and Twitter Analytics as the tools for data analysis complemented with observation.The results showed that INA-Rxiv users are growing because of the numerous discussions in social media, e.g.WhatsApp,as well as some other positive response of writers who have been using INA- Rxiv. The perspective of growth mindset and the implication of INA-Rxiv movement for filling up the gap in accelerating scientific dissemination process are presented at the end of this article.

22 CFR 40.68 - Aliens subject to INA 222(g).

Science.gov (United States)

2010-04-01

... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Aliens subject to INA 222(g). 40.68 Section 40... § 40.68 Aliens subject to INA 222(g). An alien who, under the provisions of INA 222(g), has voided a... new nonimmigrant visa unless the alien complies with the requirements in 22 CFR 41.101 (b) or (c...

Vector Green's function algorithm for radiative transfer in plane-parallel atmosphere

International Nuclear Information System (INIS)

Qin Yi; Box, Michael A.

2006-01-01

Green's function is a widely used approach for boundary value problems. In problems related to radiative transfer, Green's function has been found to be useful in land, ocean and atmosphere remote sensing. It is also a key element in higher order perturbation theory. This paper presents an explicit expression of the Green's function, in terms of the source and radiation field variables, for a plane-parallel atmosphere with either vacuum boundaries or a reflecting (BRDF) surface. Full polarization state is considered but the algorithm has been developed in such way that it can be easily reduced to solve scalar radiative transfer problems, which makes it possible to implement a single set of code for computing both the scalar and the vector Green's function

Electrical transport properties of nanoplates shaped tungsten oxide embedded poly(vinyl-alcohol) film

Science.gov (United States)

Das, Amit Kumar; Chatterjee, Piyali; Meikap, Ajit Kumar

2018-04-01

Tungsten oxide (WO3) nanoplates have been synthesized via hydrothermal method. The average crystallite size of the nanoplates is 28.9 ± 0.5 nm. The direct and indirect band gap of WO3 is observed. The AC conductivity of PVA-WO3 composite film has been observed and carrier transport mechanism follows correlated barrier hopping model. The maximum barrier height of the composite film is 0.1 eV. The electric modulus reflects the non-Debye type behaviour of relaxation time which is simulated by Kohlrausch-Willims-Watts (KWW) function.

Spin Injection, Manipulation, and Detection, in InAs Nanodevices

Science.gov (United States)

Jones, G. M.; Jonker, B. T.; Bennett, B. R.; Meyer, J. R.; Twigg, M. E.; Reinecke, T. L.; Park, D.; Pereverzev, S. V.; Badescu, C. S.; Li, C. H.; Hanbicki, A. T.; van'terve, O.; Vurgaftman, I.

2008-03-01

In this talk the authors will discuss their progress using InAs heterostructures to produce spin-polarized injection and detection, as well as manipulation of coherent spin-polarized electrons for a spin-based FET (SpinFET). High-quality n-type InAs heterostructures demonstrate many favorable characteristics necessary to the study of spin dynamics, including 2DEG's with small effective mass (m* = 0.023) and large g-factor (g = -15). Previously, high-mobility InAs heterostructures have been demonstrated in which electrons pass ballistically over hundreds of nanometers up to room temperature. Our devices seek to exploit the strong Spin-Orbit effect present in InAs to manipulate coherent spin-polarized electrons during transport, by producing perpendicular electric field using isolated top-gates fabricated over the electron transport region.

Defects and Interfaces on PtPb Nanoplates Boost Fuel Cell Electrocatalysis.

Science.gov (United States)

Sun, Yingjun; Liang, Yanxia; Luo, Mingchuan; Lv, Fan; Qin, Yingnan; Wang, Lei; Xu, Chuan; Fu, Engang; Guo, Shaojun

2018-01-01

Nanostructured Pt is the most efficient single-metal catalyst for fuel cell technology. Great efforts have been devoted to optimizing the Pt-based alloy nanocrystals with desired structure, composition, and shape for boosting the electrocatalytic activity. However, these well-known controls still show the limited ability in maximizing the Pt utilization efficiency for achieving more efficient fuel cell catalysis. Herein, a new strategy for maximizing the fuel cell catalysis by controlling/tuning the defects and interfaces of PtPb nanoplates using ion irradiation technique is reported. The defects and interfaces on PtPb nanoplates, controlled by the fluence of incident C + ions, make them exhibit the volcano-like electrocatalytic activity for methanol oxidation reaction (MOR), ethanol oxidation reaction (EOR), and oxygen reduction reaction (ORR) as a function of ion irradiation fluence. The optimized PtPb nanoplates with the mixed structure of dislocations, subgrain boundaries, and small amorphous domains are the most active for MOR, EOR, and ORR. They can also maintain high catalytic stability in acid solution. This work highlights the impact and significance of inducing/controlling the defects and interfaces on Pt-based nanocrystals toward maximizing the catalytic performance by advanced ion irradiation strategy. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Facile Br{sup -} assisted hydrothermal synthesis of Bi{sub 2}MoO{sub 6} nanoplates with enhanced visible-light photocatalytic activity

Energy Technology Data Exchange (ETDEWEB)

Zhang, Peng [Yangtze Normal University, Chongqing Key Laboratory of Inorganic Special Functional Materials, Chongqing (China); Yangtze Normal University, College of Chemistry and Chemical Engineering, Chongqing (China); Teng, Xiaoxu; Liu, Dongsheng; Fu, Liang; Xie, Hualin [Yangtze Normal University, College of Chemistry and Chemical Engineering, Chongqing (China); Zhang, Guoqing [Yangtze Normal University, Chongqing Key Laboratory of Inorganic Special Functional Materials, Chongqing (China); Ding, Shimin [Yangtze Normal University, Collaborative Innovation Center for Green Development in Wuling Mountain Areas, Chongqing (China)

2017-10-15

Bi{sub 2}MoO{sub 6} nanoplates have been controllably synthesized via a facile hydrothermal process with the assistance of Br{sup -} containing surfactant cetyltrimethylammonium bromide (CTAB) or KBr. A remarkable enhancement in the visible-light-driven photocatalytic degradation of Rhodamine B was observed. It was found that reaction temperature and surfactant play crucial roles in the formation and properties of the Bi{sub 2}MoO{sub 6} nanoplates. The best results as photocatalyst were obtained with the sample hydrothermally synthesized at 150 C with the assistance of CTAB. The improved photocatalytic performance could be ascribed to the {001}-oriented nanostructure of the Bi{sub 2}MoO{sub 6} nanoplates. KBr-templated Bi{sub 2}MoO{sub 6} nanoplates also showed better photocatalytic efficiency compared with that of flower-like Bi{sub 2}MoO{sub 6} but inferior to that of CTAB-templated Bi{sub 2}MoO{sub 6} nanoplates. (orig.)

Women Fellows of INAE | Women in Science | Initiatives | Indian ...

Indian Academy of Sciences (India)

Women Fellows of INAE. INAE - Indian National Academy of Engineering. Ms. Alpa Sheth Civil Engineering. Prof. Bharathi Bhat Electronics & Communication Engineering. Prof. Dipanwita Roy Chowdhury Computer Engineering and Information Technology. Prof. Kamala Krithivasan Computer Engineering and Information ...

On the mathematic simulation of the energy efficiency for heat exchangers with the systems of impingement plane-parallel jets

Directory of Open Access Journals (Sweden)

Haritonova Larisa

2017-01-01

Full Text Available The article gives the analytical generalization of the data on the energy efficiency for heat exchangers with the flat heat exchange surface to which systems of impact plane parallel jets are sent. Functional relations of specific power consumption (per unit of area, which were obtained for the first time using the techniques of the similarity law, for moving a heat carrier are shown with regard to design and operation factors. The regression equations representing a mathematical model of the process enable to carry out an analysis of various factors impact on the parameter to be determined. The obtained results can be used to optimize or to create the calculation techniques for new highly-efficient heat exchange devices with jet plane -parallel impingement systems and also to reduce power consumption for moving a heat carrier.

Growth and characterization of InAs quantum dots on silicon

Energy Technology Data Exchange (ETDEWEB)

Hansen, L.; Ankudinov, A.; Bensing, F.; Wagner, J.; Wagner, V.; Geurts, J. [Wuerzburg Univ. (Germany). Lehrstuhl fuer Experimentelle Physik 3; Ade, G.; Hinze, P. [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany); Waag, A. [Ulm Univ. (Germany). Abt. Halbleiterphysik

2001-03-08

We present a comprehensive investigation of molecular beam epitaxial (MBE) grown InAs quantum dots (QD) on silicon (001) and (111) by reflection high energy electron diffraction (RHEED) and Raman spectroscopy in UHV environment and ex-situ by atomic force microscopy (AFM) and transmission electron microscopy (TEM). Two different ways were developed to prepare up to 10{sup 11} cm{sup -2} InAs QDs on Si(001). One is the conventional mode by exceeding a critical thickness of deposition at which 2D growth changes towards a 3D growth mode. A second way is a dewetting transition, induced by cooling an approximately 1 ML thin 2D InAs layer from growth temperature below a critical temperature at which RHEED indicates the formation of nanoislands. Samples grown in both manners show significant differences in morphology and shape though RHEED, TEM and Raman studies correspondingly indicate strain relaxation. On Si(111) InAs grows in the common temperature range for InAs growth ({proportional_to}400 C) in flat clusters separated by deep trenches. A previous passivation of the Si(111) surface with arsenic at {proportional_to}700 C on the other hand leads to the formation of large InAs nanocrystals. (orig.)

Tunneling Characteristics of an Electron-Hole Trilayer in a Parallel Magnetic Field

National Research Council Canada - National Science Library

Lin, Y

2003-01-01

We have studied the tunneling properties of GaSb/AlSb/InAs/AlSb/GaSb heterostructures in which electrons- and boles accumulate in the InAs and GaSb regions respectively under a magnetic field parallel...

Komunikační mix Svatebního salonu INA

OpenAIRE

Rybníčková, Michala

2015-01-01

Rybníčková, M. Marketing mix for Wedding Boutique INA. Bachelor thesis, Brno: Mendel university in Brno, 2015 This Bechelor thesis focuses on the marketing mix for the company Wedding Boutique INA. Survey results are used to evaluate the effectiveness of marketing tools currently used by INA. Furthermore, the results are used to recommend improvements to the marketing mix. Thesis also includes calculation of costs and scheduling for the year 2015.

Selenium-assisted controlled growth of graphene–Bi_2Se_3 nanoplates hybrid Dirac materials by chemical vapor deposition

International Nuclear Information System (INIS)

Sun, Zhencui; Man, Baoyuan; Yang, Cheng; Liu, Mei; Jiang, Shouzhen; Zhang, Chao; Zhang, Jiaxin; Liu, Fuyan; Xu, Yuanyuan

2016-01-01

Graphical abstract: - Highlights: • We synthesize the graphene–Bi_2Se_3 nanoplates hybrid Dirac materials via CVD. • The Se seed layer impels the Bi_2Se_3 plates growing along the lateral direction. • The Se seed layer can supply enough Se atoms to fill the Se vacancies. • The Se seed layer can effectively avoid the interaction of Bi_2Se_3 and the graphene. • The Se seed layer can be used to control the density of the Bi_2Se_3 nanoplates. - Abstract: Se seed layers were used to synthesize the high-quality graphene–Bi_2Se_3 nanoplates hybrid Dirac materials via chemical vapor deposition (CVD) method. The morphology, crystallization and structural properties of the hybrid Dirac materials were characterized by SEM, EDS, Raman, XRD, AFM and HRTEM. The measurement results verify that the Se seed layer on the graphene surface can effectively saturate the surface dangling bonds of the graphene, which not only impel the uniform Bi_2Se_3 nanoplates growing along the horizontal direction but also can supply enough Se atoms to fill the Se vacancies. We also demonstrate the Se seed layer can effectively avoid the interaction of Bi_2Se_3 and the graphene. Further experiments testify the different Se seed layer on the graphene surface can be used to control the density of the Bi_2Se_3 nanoplates.

Study of Structural, Morphological and Optical Properties of Magnesium Hydroxide Nanoplates Synthesized by Precipitation Route

Directory of Open Access Journals (Sweden)

S. yousefi

2018-03-01

Full Text Available In this paper, high purity magnesium hydroxide nanoplates were successfully synthesized by using brine rich in magnesium ions as precursor and NaOH as precipitating agent without using dispersant agent in the room temoerature. The study and characterization of various properties of obtained nanopowder was carried out by X-Ray Diffraction (XRD, Field Emission Scanning Electron Microscopy (FESEM, Energy Dispersive X-ray Fluorescence Spectrometer (EDX, Fourier Transform Infrared Spectrophotometer (FTIR and Ultraviolet–visible spectroscopy (UV-Vis. The FESEM and XRD analysis results showed that magnesium hydroxide powder had nanoplates with the average crystallite size 17.1nm and no impurity; that was in agreement with the result of EDX and FTIR perfectly. Furthermore, optical characteristics of magnesium hydroxide nanoplates by UV-Vis spectroscopy showed an optical band gap of 5.5 eV. This wide band gap can be a useful innovation in optoelectronic sub-micron devices.

Effective Chemical Route to 2D Nanostructured Silicon Electrode Material: Phase Transition from Exfoliated Clay Nanosheet to Porous Si Nanoplate

International Nuclear Information System (INIS)

Adpakpang, Kanyaporn; Patil, Sharad B.; Oh, Seung Mi; Kang, Joo-Hee; Lacroix, Marc; Hwang, Seong-Ju

2016-01-01

Graphical abstract: Effective morphological control of porous silicon 2D nanoplate can be achieved by the magnesiothermically-induced phase transition of exfoliated silicate clay nanosheets. The promising lithium storage performance of the obtained silicon materials with huge capacity and excellent rate characteristics underscores the prime importance of porously 2D nanostructured morphology of silicon. - Highlights: • 2D nanostructured silicon electrode materials are successfully synthesized via the magnesiothermically-induced phase transition of exfoliated clay 2D nanosheets. • High discharge capacity and rate capability are achieved from the 2D nanoplates of silicon. • Silicon 2D nanoplates can enhance both Li"+ diffusion and charge-transfer kinetics. • 2D nanostructured silicon is beneficial for the cycling stability by minimizing the volume change during lithiation-delithiation. - Abstract: An efficient and economical route for the synthesis of porous two-dimensional (2D) nanoplates of silicon is developed via the magnesiothermically-induced phase transition of exfoliated clay 2D nanosheets. The magnesiothermic reaction of precursor clay nanosheets prepared by the exfoliation and restacking with Mg"2"+ cations yields porous 2D nanoplates of elemental silicon. The variation in the Mg:SiO_2 ratio has a significant effect on the porosity and connectivity of silicon nanoplates. The porous silicon nanoplates show a high discharge capacity of 2000 mAh g"−"1 after 50 cycles. Of prime importance is that this electrode material still retains a large discharge capacity at higher C-rates, which is unusual for the elemental silicon electrode. This is mainly attributed to the improved diffusion of lithium ions, charge-transfer kinetics, and the preservation of the electrical connection of the porous 2D plate-shaped morphology. This study highlights the usefulness of clay mineral as an economical and scalable precursor of high-performance silicon electrodes with

Progress in low light-level InAs detectors- towards Geiger-mode detection

Science.gov (United States)

Tan, Chee Hing; Ng, Jo Shien; Zhou, Xinxin; David, John; Zhang, Shiyong; Krysa, Andrey

2017-05-01

InAs avalanche photodiodes (APDs) can be designed such that only electrons are allowed to initiate impact ionization, leading to the lowest possible excess noise factor. Optimization of wet chemical etching and surface passivation produced mesa APDs with bulk dominated dark current and responsivity that are comparable and higher, respectively, than a commercial InAs detector. Our InAs electron-APDs also show high stability with fluctuation of 0.1% when operated at a gain of 11.2 over 60 s. These InAs APDs can detect very weak signal down to 35 photons per pulse. Fabrication of planar InAs by Be implantation produced planar APDs with bulk dominated dark current. Annealing at 550 °C was necessary to remove implantation damage and to activate Be dopants. Due to minimal diffusion of Be, thick depletion of 8 μm was achieved. Since the avalanche gain increases exponentially with the thickness of avalanche region, our planar APD achieved high gain > 300 at 200 K. Our work suggest that both mesa and planar InAs APDs can exhibit high gain. When combined with a suitable preamplifier, single photon detection using InAs electron-APDs could be achieved.

High Curie temperature Bi(1.85)Mn(0.15)Te3 nanoplates.

Science.gov (United States)

Cheng, Lina; Chen, Zhi-Gang; Ma, Song; Zhang, Zhi-dong; Wang, Yong; Xu, Hong-Yi; Yang, Lei; Han, Guang; Jack, Kevin; Lu, Gaoqing Max; Zou, Jin

2012-11-21

Bi(1.85)Mn(0.15)Te(3) hexagonal nanoplates with a width of ~200 nm and a thickness of ~20 nm were synthesized using a solvothermal method. According to the structural characterization and compositional analysis, the Mn(2+) and Mn(3+) ions were found to substitute Bi(3+) ions in the lattice. High-level Mn doping induces significant lattice distortion and decreases the crystal lattice by 1.07% in the a axis and 3.18% in the c axis. A high ferromagnetic state with a Curie temperature of ~45 K is observed in these nanoplates due to Mn(2+) and Mn(3+) ion doping, which is a significant progress in the field of electronics and spintronics.

Highly Reversible Lithium-ions Storage of Molybdenum Dioxide Nanoplates for High Power Lithium-ion Batteries.

Science.gov (United States)

Liu, Xiaolin; Yang, Jun; Hou, Wenhua; Wang, Jiulin; Nuli, Yanna

2015-08-24

Herein, MoO2 nanoplates have been facilely prepared through a hydrothermal process by using MoO3 microbelts as the intercalation host. The obtained MoO2 nanoplates manifest excellent electrochemical properties when the discharge cutoff voltage is simply set at 1.0 V to preclude the occurrence of conversion reactions. Its initial reversible capacity reaches 251 mAh g(-1), which is larger than that of Li4Ti5O12 , at a current rate of 0.2 C. The average capacity decay is only 0.0465 mAh g(-1) per cycle, with a coulombic efficiency of 99.5% (from the 50th cycle onward) for 2000 cycles at 1 C. Moreover, this MoO2 electrode demonstrates an outstanding high power performance. When the current rate is increased from 0.2 to 50 C, about 54% of the capacity is retained. The superior electrochemical performance can be attributed to the metallic conductivity of MoO2, short Li(+) diffusion distance in the nanoplates, and reversible crystalline phase conversion of the addition-type reaction of MoO2. The prepared MoO2 nanoplates may hopefully replace their currently used analogues, such as Li4Ti5O12 , in high power lithium-ion batteries. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Homo- and heteroepitaxial growth behavior of upright InAs nanowires on InAs and GaAs substrates

Energy Technology Data Exchange (ETDEWEB)

Bauer, Jens; Gottschalch, Volker; Paetzelt, Hendrik [Institut fuer Anorganische Chemie, Universitaet Leipzig, Johannesallee 29, D-04103 Leipzig (Germany); Wagner, Gerald [Institut fuer Kristallographie und Mineralogie, Universitaet Leipzig, Linnestr. 5, D-04103 Leipzig (Germany); Pietsch, Ulrich [Festkoerperphysik, Universitaet Siegen, D-57068 Siegen (Germany)

2008-07-01

Semiconductor nanowires (NW) acquire recently attraction because of promising new application fields in electronics and optoelectronic. We applied the vapor-liquid-solid mechanism with gold seeds in combination with low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) to achieve replicable InAs NW growth with high growth rates. Since the initial alloying of the gold seeds with the substrate material plays a deciding role for the inceptive NW growth, InAs free standing nanowires were grown on GaAs(111)B substrate as well as on InAs/GaAs(111)B quasi-substrate. The influence of the MOVPE parameters will be discussed with respect to NW morphology and real-structure. A special focus will be set on the heteroepitaxial InAs NW growth on GaAs substrates. Gracing-incidence X-ray studies and transmission electron microscopy investigations revealed the existence of a thin Ga{sub x}In{sub 1-x}As graduated alloy layer with embedded crystalline gold alloy particles at the NW substrate interface. The effect of droplet composition on the VLS growth will be presented in a thermodynamic model.

Identification of Ina proteins from Fusarium acuminatum

Science.gov (United States)

Scheel, Jan Frederik; Kunert, Anna Theresa; Pöschl, Ulrich; Fröhlich-Nowoisky, Janine

2015-04-01

Freezing of water above -36° C is based on ice nucleation activity (INA) mediated by ice nucleators (IN) which can be of various origins. Beside mineral IN, biological particles are a potentially important source of atmospheric IN. The best-known biological IN are common plant-associated bacteria. The IN activity of these bacteria is induced by a surface protein on the outer cell membrane, which is fully characterized. In contrast, much less is known about the nature of fungal IN. The fungal genus Fusarium is widely spread throughout the earth. It belongs to the Ascomycota and is one of the most severe fungal pathogens. It can affect a variety of organisms from plants to animals including humans. INA of Fusarium was already described about 30 years ago and INA of Fusarium as well as other fungal genera is assumed to be mediated by proteins or at least to contain a proteinaceous compound. Although many efforts were made the precise INA machinery of Fusarium and other fungal species including the proteins and their corresponding genes remain unidentified. In this study preparations from living fungal samples of F. acuminatum were fractionated by liquid chromatography and IN active fractions were identified by freezing assays. SDS-page and de novo sequencing by mass spectrometry were used to identify the primary structure of the protein. Preliminary results show that the INA protein of F. acuminatum is contained in the early size exclusion chromatography fractions indicating a high molecular size. Moreover we could identify a single protein band from IN active fractions at 130-145 kDa corresponding to sizes of IN proteins from bacterial species. To our knowledge this is for the first time an isolation of a single protein from in vivo samples, which can be assigned as IN active from Fusarium.

ZnO nanorods/ZnS.(1,6-hexanediamine)0.5 hybrid nanoplates hierarchical heteroarchitecture with improved electrochemical catalytic properties for hydrazine

Science.gov (United States)

Wu, Zhengcui; Wu, Yaqin; Pei, Tonghui; Wang, Huan; Geng, Baoyou

2014-02-01

Novel hierarchical heteronanostructures of ZnO nanorods/ZnS.(HDA)0.5 (HDA = 1,6-hexanediamine) hybrid nanoplates on a zinc substrate are successfully synthesized on a large scale by combining hydrothermal growth (for ZnO nanorods) and liquid chemical conversion (for ZnS.(HDA)0.5 nanoplates) techniques. The formation of ZnS.(HDA)0.5 hybrid nanoplates branches takes advantage of the preferential binding of 1,6-hexanediamine on specific facets of ZnS, which makes the thickening rate much lower than the lateral growth rate. The ZnS.(HDA)0.5 hybrid nanoplates have a layered structure with 1,6-hexanediamine inserted into interlayers of wurtzite ZnS through the bonding of nitrogen. The number density and thickness of the secondary ZnS.(HDA)0.5 nanoplates can be conveniently engineered by variation of the sulfur source and straightforward adjustment of reactant concentrations such as 1,6-hexanediamine and the sulfur source. The fabricated ZnO/ZnS.(HDA)0.5 heteronanostructures show improved electrochemical catalytic properties for hydrazine compared with the primary ZnO nanorods. Due to its simplicity and efficiency, this approach could be similarly used to fabricate varieties of hybrid heterostructures made of materials with an intrinsic large lattice mismatch.Novel hierarchical heteronanostructures of ZnO nanorods/ZnS.(HDA)0.5 (HDA = 1,6-hexanediamine) hybrid nanoplates on a zinc substrate are successfully synthesized on a large scale by combining hydrothermal growth (for ZnO nanorods) and liquid chemical conversion (for ZnS.(HDA)0.5 nanoplates) techniques. The formation of ZnS.(HDA)0.5 hybrid nanoplates branches takes advantage of the preferential binding of 1,6-hexanediamine on specific facets of ZnS, which makes the thickening rate much lower than the lateral growth rate. The ZnS.(HDA)0.5 hybrid nanoplates have a layered structure with 1,6-hexanediamine inserted into interlayers of wurtzite ZnS through the bonding of nitrogen. The number density and thickness of the

A nonlocal continuum model for the biaxial buckling analysis of composite nanoplates with shape memory alloy nanowires

Science.gov (United States)

Farajpour, M. R.; Shahidi, A. R.; Farajpour, A.

2018-03-01

In this study, the buckling behavior of a three-layered composite nanoplate reinforced with shape memory alloy (SMA) nanowires is examined. Whereas the upper and lower layers are reinforced with typical nanowires, SMA nanoscale wires are used to strengthen the middle layer of the system. The composite nanoplate is assumed to be under the action of biaxial compressive loading. A scale-dependent mathematical model is presented with the consideration of size effects within the context of the Eringen’s nonlocal continuum mechanics. Using the one-dimensional Brinson’s theory and the Kirchhoff theory of plates, the governing partial differential equations of SMA nanowire-reinforced hybrid nanoplates are derived. Both lateral and longitudinal deflections are taken into consideration in the theoretical formulation and method of solution. In order to reduce the governing differential equations to their corresponding algebraic equations, a discretization approach based on the differential quadrature method is employed. The critical buckling loads of the hybrid nanosystem with various boundary conditions are obtained with the use of a standard eigenvalue solver. It is found that the stability response of SMA composite nanoplates is strongly sensitive to the small scale effect.

Hydroxyapatite coatings with oriented nanoplate and nanorod arrays: Fabrication, morphology, cytocompatibility and osteogenic differentiation

Energy Technology Data Exchange (ETDEWEB)

Chen, Wei [The Education Ministry Key Lab of Resource Chemistry and Shanghai Key Laboratory of Rare Earth Functional Materials, Shanghai Normal University, Shanghai 200234 (China); Tian, Bo [Shanghai Key Laboratory of Orthopedic Implant, Department of Orthopedic Surgery, Shanghai Ninth People' s Hospital, Shanghai Jiao Tong University School of Medicine, Shanghai 200011 (China); Lei, Yong; Ke, Qin-Fei [The Education Ministry Key Lab of Resource Chemistry and Shanghai Key Laboratory of Rare Earth Functional Materials, Shanghai Normal University, Shanghai 200234 (China); Zhu, Zhen-An, E-mail: zhuzhenan2006@126.com [Shanghai Key Laboratory of Orthopedic Implant, Department of Orthopedic Surgery, Shanghai Ninth People' s Hospital, Shanghai Jiao Tong University School of Medicine, Shanghai 200011 (China); Guo, Ya-Ping, E-mail: ypguo@shnu.edu.cn [The Education Ministry Key Lab of Resource Chemistry and Shanghai Key Laboratory of Rare Earth Functional Materials, Shanghai Normal University, Shanghai 200234 (China)

2016-10-01

Hydroxyapatite (HA) crystals exhibit rod-like shape with c-axis orientation and plate-like shape with a(b)-axis orientation in vertebrate bones and tooth enamel surfaces, respectively. Herein, we report the synthesis of HA coatings with the oriented nanorod arrays (RHACs) and HA coatings with oriented nanoplate arrays (PHACs) by using bioglass coatings as sacrificial templates. After soaking in simulated body fluid (SBF) at 120 °C, the bioglass coatings are hydrothermally converted into the HA coatings via a dissolution-precipitation reaction. If the Ca/P ratios in SBF are 2.50 and 1.25, the HA crystals on the coatings are oriented nanorod arrays and oriented nanoplate arrays, respectively. Moreover, the bioglass coatings are treated with SBF at 37 °C, plate-like HA coatings with a low crystallinity (SHACs) are prepared. As compared with the Ti6Al4V and SHACs, the human bone marrow stromal cells (hBMSCs) on the RHACs and PHACs have better cell adhesion, spreading, proliferation and osteogenic differentiation because of their moderately hydrophilic surfaces and similar chemical composition, morphology and crystal orientation to human hard tissues. Notably, the morphologies of HA crystals have no obvious effects on cytocompatibility and osteogenic differentiation. Hence, the HA coatings with oriented nanoplate arrays or oriented nanorod arrays have a great potential for orthopedic applications. - Highlights: • We prepare hydroxyapatite coatings with oriented nanoplate and nanorod arrays. • Hydroxyapatite coatings are in situ converted from bioglass coatings. • Hydroxyapatite coatings have good cytocompatibility and osteogenic differentiation. • Oriented hydroxyapatite coatings are used for orthopedic implants.

Hydroxyapatite coatings with oriented nanoplate and nanorod arrays: Fabrication, morphology, cytocompatibility and osteogenic differentiation

International Nuclear Information System (INIS)

Chen, Wei; Tian, Bo; Lei, Yong; Ke, Qin-Fei; Zhu, Zhen-An; Guo, Ya-Ping

2016-01-01

Hydroxyapatite (HA) crystals exhibit rod-like shape with c-axis orientation and plate-like shape with a(b)-axis orientation in vertebrate bones and tooth enamel surfaces, respectively. Herein, we report the synthesis of HA coatings with the oriented nanorod arrays (RHACs) and HA coatings with oriented nanoplate arrays (PHACs) by using bioglass coatings as sacrificial templates. After soaking in simulated body fluid (SBF) at 120 °C, the bioglass coatings are hydrothermally converted into the HA coatings via a dissolution-precipitation reaction. If the Ca/P ratios in SBF are 2.50 and 1.25, the HA crystals on the coatings are oriented nanorod arrays and oriented nanoplate arrays, respectively. Moreover, the bioglass coatings are treated with SBF at 37 °C, plate-like HA coatings with a low crystallinity (SHACs) are prepared. As compared with the Ti6Al4V and SHACs, the human bone marrow stromal cells (hBMSCs) on the RHACs and PHACs have better cell adhesion, spreading, proliferation and osteogenic differentiation because of their moderately hydrophilic surfaces and similar chemical composition, morphology and crystal orientation to human hard tissues. Notably, the morphologies of HA crystals have no obvious effects on cytocompatibility and osteogenic differentiation. Hence, the HA coatings with oriented nanoplate arrays or oriented nanorod arrays have a great potential for orthopedic applications. - Highlights: • We prepare hydroxyapatite coatings with oriented nanoplate and nanorod arrays. • Hydroxyapatite coatings are in situ converted from bioglass coatings. • Hydroxyapatite coatings have good cytocompatibility and osteogenic differentiation. • Oriented hydroxyapatite coatings are used for orthopedic implants.

Electrical characterisation of Sn doped InAs grown by MOVPE

International Nuclear Information System (INIS)

Shamba, P.; Botha, L.; Krug, T.; Venter, A.; Botha, J.R.

2008-01-01

The feasibility of tetraethyl tin (TESn) as an n-type dopant for InAs is investigated. The electrical properties of Sn doped InAs films grown on semi-insulating GaAs substrates by MOVPE are extensively studied as a function of substrate temperature, V/III ratio, substrate orientation and TESn flow rate. Results from this study show that Sn concentrations can be controlled over 2 orders of magnitude. The Sn doped InAs layers exhibit carrier concentrations between 2.7 x 10 17 and 4.7 x 10 19 cm -3 with 77 K mobilities ranging from 12 000 to 1300 cm 2 /Vs. Furthermore, the influence of the variation of these parameters on the structural properties of InAs are also reported. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Parallel Implementation of Gamma-Point Pseudopotential Plane-Wave DFT with Exact Exchange

International Nuclear Information System (INIS)

Bylaska, Eric J.; Tsemekhman, Kiril L.; Baden, Scott B.; Weare, John H.; Jonsson, Hannes

2011-01-01

One of the more persistent failures of conventional density functional theory (DFT) methods has been their failure to yield localized charge states such as polarons, excitons and solitons in solid-state and extended systems. It has been suggested that conventional DFT functionals, which are not self-interaction free, tend to favor delocalized electronic states since self-interaction creates a Coulomb barrier to charge localization. Pragmatic approaches in which the exchange correlation functionals are augmented with small amount of exact exchange (hybrid-DFT, e.g. B3LYP and PBE0) have shown promise in localizing charge states and predicting accurate band gaps and reaction barriers. We have developed a parallel algorithm for implementing exact exchange into pseudopotential plane-wave density functional theory and we have implemented it in the NWChem program package. The technique developed can readily be employed in plane-wave DFT programs. Furthermore, atomic forces and stresses are straightforward to implement, making it applicable to both confined and extended systems, as well as to Car-Parrinello ab initio molecular dynamic simulations. This method has been applied to several systems for which conventional DFT methods do not work well, including calculations for band gaps in oxides and the electronic structure of a charge trapped state in the Fe(II) containing mica, annite.

Sensing the facet orientation in silver nano-plates using scanning Kelvin probe microscopy in air

Energy Technology Data Exchange (ETDEWEB)

Abdellatif, M.H. [Department of Nanostructures, Istituto Italiano di Tecnologia, via Morego 30, I-16163 Genova (Italy); Physics Department, National Research Center, Elbehoos st., 12622, Dokki, Giza (Egypt); Salerno, M., E-mail: marco.salerno@iit.it [Department of Nanophysics, Istituto Italiano di Tecnologia, via Morego 30, I-16163 Genova (Italy); Polovitsyn, Anatolii [Department of Nanochemistry, Istituto Italiano di Tecnologia, via Morego 30, I-16163 Genova (Italy); Dipartimentodi Fisica, Università di Genova, via Dodecaneso 33, I-16146 Genova (Italy); Marras, Sergio [Department of Nanochemistry, Istituto Italiano di Tecnologia, via Morego 30, I-16163 Genova (Italy); De Angelis, Francesco [Department of Nanostructures, Istituto Italiano di Tecnologia, via Morego 30, I-16163 Genova (Italy)

2017-05-01

Highlights: • The surface potential of drop cast nanocrystals was measured by SKPM in ambient air. • The nanocrystal facet work function was derived by theory. • By comparing theory and experiment we distinguished the nanocrystal facets. • Nanocrystal facet control is of practical interest for optoelectronic devices. - Abstract: The work function of nano-materials is important for a full characterization of their electronic properties. Because the band alignment, band bending and electronic noise are very sensitive to work function fluctuations, the dependence of the work function of nano-scale crystals on facet orientation can be a critical issue in optimizing optoelectronic devices based on these materials. We used scanning Kelvin probe microscopy to assess the local work function on samples of silver nano-plates at sub-micrometric spatial resolution. With the appropriate choice of the substrate and based on statistical analysis, it was possible to distinguish the surface potential of the different facets of silver nano-plates even if the measurements were done in ambient conditions without the use of vacuum. A phenomenological model was used to calculate the differences of facet work function of the silver nano-plates and the corresponding shift in Fermi level. This theoretical prediction and the experimentally observed difference in surface potential on the silver nano-plates were in good agreement. Our results show the possibility to sense the nano-crystal facets by appropriate choice of the substrate in ambient conditions.

Sensing the facet orientation in silver nano-plates using scanning Kelvin probe microscopy in air

International Nuclear Information System (INIS)

Abdellatif, M.H.; Salerno, M.; Polovitsyn, Anatolii; Marras, Sergio; De Angelis, Francesco

2017-01-01

Highlights: • The surface potential of drop cast nanocrystals was measured by SKPM in ambient air. • The nanocrystal facet work function was derived by theory. • By comparing theory and experiment we distinguished the nanocrystal facets. • Nanocrystal facet control is of practical interest for optoelectronic devices. - Abstract: The work function of nano-materials is important for a full characterization of their electronic properties. Because the band alignment, band bending and electronic noise are very sensitive to work function fluctuations, the dependence of the work function of nano-scale crystals on facet orientation can be a critical issue in optimizing optoelectronic devices based on these materials. We used scanning Kelvin probe microscopy to assess the local work function on samples of silver nano-plates at sub-micrometric spatial resolution. With the appropriate choice of the substrate and based on statistical analysis, it was possible to distinguish the surface potential of the different facets of silver nano-plates even if the measurements were done in ambient conditions without the use of vacuum. A phenomenological model was used to calculate the differences of facet work function of the silver nano-plates and the corresponding shift in Fermi level. This theoretical prediction and the experimentally observed difference in surface potential on the silver nano-plates were in good agreement. Our results show the possibility to sense the nano-crystal facets by appropriate choice of the substrate in ambient conditions.

Synthesis of ultrathin face-centered-cubic Au@Pt and Au@Pd core-shell nanoplates from hexagonal-close-packed Au square sheets

KAUST Repository

Fan, Zhanxi; Zhu, Yihan; Huang, Xiao; Han, Yu; Wang, Qingxiao; Liu, Qing; Huang, Ying; Gan, Chee Lip; Zhang, Hua

2015-01-01

@Pd rhombic nanoplates, respectively. We believe that these findings will shed new light on the synthesis of novel noble bimetallic nanostructures. Phase change: Ultrathin Au@Pt and Au@Pd core-shell nanoplates were prepared from Au square sheets. A phase

Hydrothermal synthesis of p-type nanocrystalline NiO nanoplates for high response and low concentration hydrogen gas sensor application

KAUST Repository

Nakate, Umesh T.; Lee, Gun Hee; Ahmad, Rafiq; Patil, Pramila; Bhopate, Dhanaji P.; Hahn, Y.B.; Yu, Y.T.; Suh, Eun-kyung

2018-01-01

High quality nanocrystalline NiO nanoplates were synthesized using surfactant and template free hydrothermal route. The gas sensing properties of NiO nanoplates were investigated. The nanoplates morphology of NiO with average thickness ~20 nm and diameter ~100 nm has been confirmed by FE-SEM and TEM. Crystalline quality of NiO has been studied using HRTEM and SAED techniques. Structural properties and elemental compositions have been analysed by XRD and energy dispersive spectrometer (EDS) respectively. The detailed investigation of structural parameters has been carried out. The optical properties of NiO were analyzed from UV-Visible and photoluminescence spectra. NiO nanoplates have good selectivity towards hydrogen (H2) gas. The lowest H2 response of 3% was observed at 2 ppm, whereas 90% response was noted for 100 ppm at optimized temperature of 200 °C with response time 180 s. The H2 responses as functions of different operating temperature as well as gas concentrations have been studied along with sensor stability. The hydrogen sensing mechanism was also elucidated.

Hydrothermal synthesis of p-type nanocrystalline NiO nanoplates for high response and low concentration hydrogen gas sensor application

KAUST Repository

Nakate, Umesh T.

2018-05-30

High quality nanocrystalline NiO nanoplates were synthesized using surfactant and template free hydrothermal route. The gas sensing properties of NiO nanoplates were investigated. The nanoplates morphology of NiO with average thickness ~20 nm and diameter ~100 nm has been confirmed by FE-SEM and TEM. Crystalline quality of NiO has been studied using HRTEM and SAED techniques. Structural properties and elemental compositions have been analysed by XRD and energy dispersive spectrometer (EDS) respectively. The detailed investigation of structural parameters has been carried out. The optical properties of NiO were analyzed from UV-Visible and photoluminescence spectra. NiO nanoplates have good selectivity towards hydrogen (H2) gas. The lowest H2 response of 3% was observed at 2 ppm, whereas 90% response was noted for 100 ppm at optimized temperature of 200 °C with response time 180 s. The H2 responses as functions of different operating temperature as well as gas concentrations have been studied along with sensor stability. The hydrogen sensing mechanism was also elucidated.

Synthesis and characterization of NiCo_2O_4 nanoplates as efficient electrode materials for electrochemical supercapacitors

International Nuclear Information System (INIS)

Kim, Taehyun; Ramadoss, Ananthakumar; Saravanakumar, Balasubramaniam; Veerasubramani, Ganesh Kumar; Kim, Sang Jae

2016-01-01

Highlights: • NiCo_2O_4 nanoplates were synthesized through a facile approach. • The NiCo_2O_4 nanoplates electrode material exhibit a specific capacitance of 332 F g"−"1 at 5 mV s"−"1. • The fabricated NiCo_2O_4 electrode reveals 86% retention of initial capacitance after 2000 cycles. - Abstract: In the present work, NiCo_2O_4 nanoplates were prepared by a facile, low temperature, hydrothermal method, followed by thermal annealing and used supercapacitor applications. The physico-chemical characterization of as-prepared materials were investigated by means of X-ray diffraction (XRD), Fourier transform infra-red spectroscopy (FT-IR) and field emission scanning electron microscopy (FE-SEM). The electrochemical measurements demonstrate that the NiCo_2O_4 nanoplates electrode (NC-5) exhibits a high specific capacitance of 332 F g"−"1 at a scan rate of 5 mV s"−"1 and also retained about 86% of the initial specific capacitance value even after 2000 cycles at a current density of 2.5 A g"−"1. These results suggest that the fabricated electrode material has huge potential as a novel electrode material for electrochemical capacitors.

Inhibition of growth of S. epidermidis by hydrothermally synthesized ZnO nanoplates

Science.gov (United States)

Abinaya, C.; Mayandi, J.; Osborne, J.; Frost, M.; Ekstrum, C.; Pearce, J. M.

2017-07-01

The antibacterial effect of zinc oxide (ZnO#1) as prepared and annealed (ZnO#2) at 400 °C, Cu doped ZnO (CuZnO), and Ag doped ZnO (AgZnO) nanoplates on Staphylococcus epidermidis was investigated for the inhibition and inactivation of cell growth. The results shows that pure ZnO and doped ZnO samples exhibited antibacterial activity against Staphylococcus epidermidis (S. epidermidis) as compared to tryptic soy broth (TSB). Also it is observed that S. epidermidis was extremely sensitive to treatment with ZnO nanoplates and it is clear that the effect is not purely depend on Cu/Ag. Phase identification of a crystalline material and unit cell dimensions were studied by x-ray powder diffraction (XRD). The scanning electron microscopy (SEM) provides information on sample’s surface topography and the EDX confirms the presence of Zn, O, Cu and Ag. X-ray photo-electron spectroscopy (XPS) was used to analyze the elemental composition and electronic state of the elements that exist within the samples. These studies confirms the formation of nanoplates and the presence of Zn, O, Ag, Cu with the oxidation states  +2, -2, 0 and  +2 respectively. These results indicates promising antibacterial applications of these ZnO-based nanoparticles synthesized with low-cost hydrothermal methods.

Electrochemical supercapacitors of cobalt hydroxide nanoplates grown on conducting cadmium oxide base-electrodes

Directory of Open Access Journals (Sweden)

Kailas K. Tehare

2017-05-01

Full Text Available Dopant-free and cost-effective sprayed cadmium oxide (CdO conducting base-electrodes, obtained at different concentrations (0.5, 1 and 1.5 M, characterized for their structures, morphologies and conductivities by using X-ray diffraction, scanning electron microscopy and electrical conductivity measurements, respectively, are employed as base-electrodes for growing cobalt hydroxide (Co(OH2 nanoplates using a simple electrodeposition method which further are envisaged for electrochemical supercapacitor application. Polycrystalline nature and mushroom-like plane-views are confirmed from the structure and morphology analyses. Both CdO and CdO–Co(OH2 electrodes reveal specific capacitances as high as 312 F g−1 and 1119 F g−1, respectively, in 0.1 M KOH electrolyte at 10 mV s−1 sweep rate. Optimized Co(OH2–CdO configuration electrode demonstrates energy density of 98.83 W h kg−1 and power density of 0.75 kW kg−1. In order to investigate the charge transfer kinematics electrochemical impedance measurements are carried out and explored.

Fast Synthesis of Gibbsite Nanoplates and Process Optimization using Box-Behnken Experimental Design

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xin; Zhang, Xianwen; Graham, Trenton R.; Pearce, Carolyn I.; Mehdi, Beata L.; N' Diaye, Alpha T.; Kerisit, Sebastien N.; Browning, Nigel D.; Clark, Sue B.; Rosso, Kevin M.

2017-10-26

Developing the ability to synthesize compositionally and morphologically well-defined gibbsite particles at the nanoscale with high yield is an ongoing need that has not yet achieved the level of rational design. Here we report optimization of a clean inorganic synthesis route based on statistical experimental design examining the influence of Al(OH)3 gel precursor concentration, pH, and aging time at temperature. At 80 oC, the optimum synthesis conditions of gel concentration at 0.5 M, pH at 9.2, and time at 72 h maximized the reaction yield up to ~87%. The resulting gibbsite product is composed of highly uniform euhedral hexagonal nanoplates within a basal plane diameter range of 200-400 nm. The independent roles of key system variables in the growth mechanism are considered. On the basis of these optimized experimental conditions, the synthesis procedure, which is both cost-effective and environmentally friendly, has the potential for mass production scale-up of high quality gibbsite material for various fundamental research and industrial applications.

Electron beam dosimetry. Calibration and use of plane parallel chambers following IAEA TRS-381 recommendations

International Nuclear Information System (INIS)

Lizuain, M.C.; Linero, D.; Picon, C.; Saldana, O.

2000-01-01

Using different plane parallel chamber types (NACP-02, PTW Roos and PTW Markus), and a cylindrical chamber NE-2571 as reference, the IAEA TRS-381 Code of Practice has been compared with the AAPM TG-39 dosimetry protocol for plane parallel chambers. N D,air pp was determined following the 60 Co in-phantom method and the electron beam method described in TRS-381, using water, PMMA and RMI-457 Solid Water phantoms. Differences were smaller than 0.5% between the two methods except for the PTW Roos chamber where the discrepancy was about 1.5%. The absorbed dose to water was determined according to the procedures and data of each protocol for electron beams between 4 and 18 MeV. Differences in absorbed dose were less than 1% when measurements were made in water, but a deviation of up to 2% was found between TRS-381 and TG-39 when PMMA phantoms were used. To validate the results obtained and to investigate differences between plastic and water phantoms in electron beam dosimetry, the scaling factor C pl and the fluence correction factor h m for PMMA and solid water RMI-457 were measured and compared to the data in TRS-381. Good agreement was found for C pl , but only when the plastics density were taken into account. The experimental values of h m have a large uncertainty but for PMMA a trend for h m being lower than in TRS-381 has been obtained. (author)

Discrete ordinates cross-section generation in parallel plane geometry -- 2: Computational results

International Nuclear Information System (INIS)

Yavuz, M.

1998-01-01

In Ref. 1, the author presented inverse discrete ordinates (S N ) methods for cross-section generation with an arbitrary scattering anisotropy of order L (L ≤ N - 1) in parallel plane geometry. The solution techniques depend on the S N eigensolutions. The eigensolutions are determined by the inverse simplified S N method (ISS N ), which uses the surface Green's function matrices (T and R). Inverse problems are generally designed so that experimentally measured physical quantities can be used in the formulations. In the formulations, although T and R (TR matrices) are measurable quantities, the author does not have such data to check the adequacy and accuracy of the methods. However, it is possible to compute TR matrices by S N methods. The author presents computational results and computationally observed properties

Evaluation of pulmonary and systemic toxicity following lung exposure to graphite nanoplates: a member of the graphene-based nanomaterial family.

Science.gov (United States)

Roberts, Jenny R; Mercer, Robert R; Stefaniak, Aleksandr B; Seehra, Mohindar S; Geddam, Usha K; Chaudhuri, Ishrat S; Kyrlidis, Angelos; Kodali, Vamsi K; Sager, Tina; Kenyon, Allison; Bilgesu, Suzan A; Eye, Tracy; Scabilloni, James F; Leonard, Stephen S; Fix, Natalie R; Schwegler-Berry, Diane; Farris, Breanne Y; Wolfarth, Michael G; Porter, Dale W; Castranova, Vincent; Erdely, Aaron

2016-06-21

Graphene, a monolayer of carbon, is an engineered nanomaterial (ENM) with physical and chemical properties that may offer application advantages over other carbonaceous ENMs, such as carbon nanotubes (CNT). The goal of this study was to comparatively assess pulmonary and systemic toxicity of graphite nanoplates, a member of the graphene-based nanomaterial family, with respect to nanoplate size. Three sizes of graphite nanoplates [20 μm lateral (Gr20), 5 μm lateral (Gr5), and m(2). At the low dose, none of the Gr materials induced toxicity. At the high dose, Gr20 and Gr5 exposure increased indices of lung inflammation and injury in lavage fluid and tissue gene expression to a greater degree and duration than Gr1 and CB. Gr5 and Gr20 showed no or minimal lung epithelial hypertrophy and hyperplasia, and no development of fibrosis by 2 months post-exposure. In addition, the aorta and liver inflammatory and acute phase genes were transiently elevated in Gr5 and Gr20, relative to Gr1. Pulmonary and systemic toxicity of graphite nanoplates may be dependent on lateral size and/or surface reactivity, with the graphite nanoplates > 5 μm laterally inducing greater toxicity which peaked at the early time points post-exposure relative to the 1-2 μm graphite nanoplate.

ZnO nanorods/ZnS·(1,6-hexanediamine)(0.5) hybrid nanoplates hierarchical heteroarchitecture with improved electrochemical catalytic properties for hydrazine.

Science.gov (United States)

Wu, Zhengcui; Wu, Yaqin; Pei, Tonghui; Wang, Huan; Geng, Baoyou

2014-03-07

Novel hierarchical heteronanostructures of ZnO nanorods/ZnS·(HDA)0.5 (HDA = 1,6-hexanediamine) hybrid nanoplates on a zinc substrate are successfully synthesized on a large scale by combining hydrothermal growth (for ZnO nanorods) and liquid chemical conversion (for ZnS·(HDA)0.5 nanoplates) techniques. The formation of ZnS·(HDA)0.5 hybrid nanoplates branches takes advantage of the preferential binding of 1,6-hexanediamine on specific facets of ZnS, which makes the thickening rate much lower than the lateral growth rate. The ZnS·(HDA)0.5 hybrid nanoplates have a layered structure with 1,6-hexanediamine inserted into interlayers of wurtzite ZnS through the bonding of nitrogen. The number density and thickness of the secondary ZnS·(HDA)0.5 nanoplates can be conveniently engineered by variation of the sulfur source and straightforward adjustment of reactant concentrations such as 1,6-hexanediamine and the sulfur source. The fabricated ZnO/ZnS·(HDA)0.5 heteronanostructures show improved electrochemical catalytic properties for hydrazine compared with the primary ZnO nanorods. Due to its simplicity and efficiency, this approach could be similarly used to fabricate varieties of hybrid heterostructures made of materials with an intrinsic large lattice mismatch.

Fabrication of nanoplate resonating structures via micro-masonry

International Nuclear Information System (INIS)

Bhaswara, A; Legrand, B; Mathieu, F; Nicu, L; Leichle, T; Keum, H; Rhee, S; Kim, S

2014-01-01

Advantages of using nanoscale membrane and plate resonators over more common cantilever shapes include higher quality factor (Q factor) for an equivalent mass and better suitability to mass sensing applications in fluid. Unfortunately, the current fabrication methods used to obtain such membranes and plates are limited in terms of materials and thickness range, and can potentially cause stiction. This study presents a new method to fabricate nanoplate resonating structures based on micro-masonry, which is the advanced form of the transfer printing technique. Nanoplate resonators were fabricated by transfer printing 0.34 µm thick square-shaped silicon plates by means of polydimethylsiloxane microtip stamps on top of silicon oxide base structures displaying 20 µm diameter cavities, followed by a thermal annealing step to create a rigid bond. Typical resulting suspended structures display vibration characteristics, i.e. a resonance frequency of a few MHz and Q factors above 10 in air at atmospheric pressure, which are in accordance with theory. Moreover, the presented fabrication method enables the realization of multiple suspended structures in a single step and on the same single base, without mechanical crosstalk between the resonators. This work thus demonstrates the suitability and the advantages of the micro-masonry technique for the fabrication of plate resonators for mass sensing purpose. (paper)

Ag-catalyzed InAs nanowires grown on transferable graphite flakes

DEFF Research Database (Denmark)

Meyer-Holdt, Jakob; Kanne, Thomas; Sestoft, Joachim E.

2016-01-01

on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro...

20 CFR 668.860 - What cash management procedures apply to INA grant funds?

Science.gov (United States)

2010-04-01

... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What cash management procedures apply to INA... Administrative Requirements § 668.860 What cash management procedures apply to INA grant funds? INA grantees must... implement the Cash Management Improvement Act, found at 31 CFR part 205, apply by law to most recipients of...

La costituzione dell’INA e il monopolio statale delle assicurazioni (1912-1922 = The constitution of INA and the state monopoly of insurance (1912-1922

Directory of Open Access Journals (Sweden)

Serena Potito

2012-07-01

Full Text Available Il saggio –basato principalmente su documenti attualmente conservati presso l’Archivio Storico dell’INA, a Roma– esamina le vicende legate alla nascita dell’Istituto, costituito in un regime transitorio di monopolio relativo nel settore delle assicurazioni sulla vita.A causa del suo significato economico e politico, questa speciale forma di monopolio statale diede luogo a molte reazioni nell’ambito finanziario e politico nazionale, pertanto l’INA iniziò i primi anni di attività in una situazione conflittuale ed incerta.Il saggio inoltre approfondisce le ripercussioni sul mercato assicurativo internazionale in seguito alla nascita dell’INA.Durante il decennio di monopolio parziale dell’Istituto nel settore delle assicurazioni sulla vita (1912-1922, le compagnie di assicurazione straniere ritennero compromessi i loro interessi finanziari nel mercato italiano, e lo osteggiarono fino al 1923, quando una nuova legge riformò il mercato assicurativo sulla vita, abolendo il regime di monopolio.The essay –mainly based on documents actually preserved in the Historical Archives of INA, in Rome– examines the events connected with the foundation of the Institute, established in a transient condition of partial monopoly system in life insurance sector. Because of its economic and political meaning, this special form of state monopoly gave rise to many reactions in the financial and political national context, and so INA started its first years of activity in a troubled and unstable situation. The essay also discusses about the repercussions on international insurance market in consequence of the foundation of INA.During the ten-year perior of partial monopoly of the Institute in life insurance sector (1912-1922, foreign insurance companies deemed their financial interest in Italian market jeopardized, and contrasted with it until 1923, when a new act reformed life insurance market, abrogating monopoly system. 

Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

Directory of Open Access Journals (Sweden)

Tyagi Renu

2009-01-01

Full Text Available Abstract Self-assembled InAs quantum dots (QDs were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs. The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

Progress in parallel implementation of the multilevel plane wave time domain algorithm

KAUST Repository

Liu, Yang

2013-07-01

The computational complexity and memory requirements of classical schemes for evaluating transient electromagnetic fields produced by Ns dipoles active for Nt time steps scale as O(NtN s 2) and O(Ns 2), respectively. The multilevel plane wave time domain (PWTD) algorithm [A.A. Ergin et al., Antennas and Propagation Magazine, IEEE, vol. 41, pp. 39-52, 1999], viz. the extension of the frequency domain fast multipole method (FMM) to the time domain, reduces the above costs to O(NtNslog2Ns) and O(Ns α) with α = 1.5 for surface current distributions and α = 4/3 for volumetric ones. Its favorable computational and memory costs notwithstanding, serial implementations of the PWTD scheme unfortunately remain somewhat limited in scope and ill-suited to tackle complex real-world scattering problems, and parallel implementations are called for. © 2013 IEEE.

Wet-chemical passivation of InAs: toward surfaces with high stability and low toxicity.

Science.gov (United States)

Jewett, Scott A; Ivanisevic, Albena

2012-09-18

In a variety of applications where the electronic and optical characteristics of traditional, siliconbased materials are inadequate, recently researchers have employed semiconductors made from combinations of group III and V elements such as InAs. InAs has a narrow band gap and very high electron mobility in the near-surface region, which makes it an attractive material for high performance transistors, optical applications, and chemical sensing. However, silicon-based materials remain the top semiconductors of choice for biological applications, in part because of their relatively low toxicity. In contrast to silicon, InAs forms an unstable oxide layer under ambient conditions, which can corrode over time and leach toxic indium and arsenic components. To make InAs more attractive for biological applications, researchers have investigated passivation, chemical and electronic stabilization, of the surface by adlayer adsorption. Because of the simplicity, low cost, and flexibility in the type of passivating molecule used, many researchers are currently exploring wet-chemical methods of passivation. This Account summarizes much of the recent work on the chemical passivation of InAs with a particular focus on the chemical stability of the surface and prevention of oxide regrowth. We review the various methods of surface preparation and discuss how crystal orientation affects the chemical properties of the surface. The correct etching of InAs is critical as researchers prepare the surface for subsequent adlayer adsorption. HCl etchants combined with a postetch annealing step allow the tuning of the chemical properties in the near-surface region to either arsenic- or indium-rich environments. Bromine etchants create indium-rich surfaces and do not require annealing after etching; however, bromine etchants are harsh and potentially destructive to the surface. The simultaneous use of NH(4)OH etchants with passivating molecules prevents contact with ambient air that can

Nonlocal strain gradient based wave dispersion behavior of smart rotating magneto-electro-elastic nanoplates

Science.gov (United States)

Ebrahimi, Farzad; Dabbagh, Ali

2017-02-01

Main object of the present research is an exact investigation of wave propagation responses of smart rotating magneto-electro-elastic (MEE) graded nanoscale plates. In addition, effective material properties of functionally graded (FG) nanoplate are presumed to be calculated using the power-law formulations. Also, it has been tried to cover both softening and stiffness-hardening behaviors of nanostructures by the means of employing nonlocal strain gradient theory (NSGT). Due to increasing the accuracy of the presented model in predicting shear deformation effects, a refined higher-order plate theory is introduced. In order to cover the most enormous circumstances, maximum amount of load generated by plate’s rotation is considered. Furthermore, utilizing a developed form of Hamilton’s principle, containing magneto-electric effects, the nonlocal governing equations of MEE-FG rotating nanoplates are derived. An analytical solution is obtained to solve the governing equations and validity of the solution method is proven by comparing results from present method with those of former attempts. At last, outcomes are plotted in the framework of some figures to show the influences of various parameters such as wave number, nonlocality, length scale parameter, magnetic potential, electric voltage, gradient index and angular velocity on wave frequency, phase velocity and escape frequency of the examined nanoplate.

Synthesis of a mesoporous single crystal Ga2O3 nanoplate with improved photoluminescence and high sensitivity in detecting CO.

Science.gov (United States)

Yan, Shicheng; Wan, Lijuan; Li, Zhaosheng; Zhou, Yong; Zou, Zhigang

2010-09-14

A new approach is proposed to synthesize a mesoporous single crystal Ga(2)O(3) nanoplate by heating a single crystal nanoplate of GaOOH, which involves an ion exchange between KGaO(2) and CH(3)COOH at room temperature for the formation of GaOOH and pseudomorphic and topotactic phase transformation from GaOOH to Ga(2)O(3).

The use of plane-parallel chambers for the dosimetry of electron beams in radiotherapy

International Nuclear Information System (INIS)

Nahum, A.E.; Thwaites, D.I.

1996-01-01

This paper reviews the use of plane-parallel chambers for the absolute determination of absorbed dose in water at the reference depth in low-energy electron beams. The geometrical and electrical properties of the most commonly used commercial designs of chamber are described. It is shown that there is now firm experimental evidence that the perturbation factors for two commonly used chamber designs differ significantly from unity below E-bar z ≅ 5 MeV. Furthermore, there is also mounting evidence that the material behind the air cavity can influence the chamber signal due to differences in backscattering compared to that of the phantom material. The theoretical work on the perturbation in electron beams caused by gas cavities in condensed media has been critically examined. It is argued that none of the existing analytical approaches convincingly models the physics except at small depths, but that these limitations will be overcome by Monte-Carlo simulations in the near future. The different approaches to calibration of plane-parallel chambers are discussed. The failure of simple models to give k u,pp and p wall values at 60 Co which agree with experimental determinations is emphasized. A recent compilation of the measured values of these correction factors for a wide range of chamber types and experimental conditions is given. New Monte Carlo work which largely explains and correctly predicts the experimentally observed behaviour of chambers of non-homogeneous construction in a 60 Co beam is described. It is concluded that the most reliable method of obtaining the N D,pp factor is still by intercomparison with a cylindrical chamber in a high-energy electron beam. Finally problems with the use of non-water, i.e. plastic, phantoms are reviewed, including charge-storage effects and fluence conversion factors. (author). 63 refs, 5 figs, 4 tabs

Optical emission of InAs nanowires

International Nuclear Information System (INIS)

Möller, M; De Lima Jr, M M; Cantarero, A; Chiaramonte, T; Cotta, M A; Iikawa, F

2012-01-01

Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende–wurtzite alternating layers, and to the donor–acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature. (paper)

Optical emission of InAs nanowires

Science.gov (United States)

Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.

2012-09-01

Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende-wurtzite alternating layers, and to the donor-acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature.

Vector Green's function algorithm for radiative transfer in plane-parallel atmosphere

Energy Technology Data Exchange (ETDEWEB)

Qin Yi [School of Physics, University of New South Wales (Australia)]. E-mail: yi.qin@csiro.au; Box, Michael A. [School of Physics, University of New South Wales (Australia)

2006-01-15

Green's function is a widely used approach for boundary value problems. In problems related to radiative transfer, Green's function has been found to be useful in land, ocean and atmosphere remote sensing. It is also a key element in higher order perturbation theory. This paper presents an explicit expression of the Green's function, in terms of the source and radiation field variables, for a plane-parallel atmosphere with either vacuum boundaries or a reflecting (BRDF) surface. Full polarization state is considered but the algorithm has been developed in such way that it can be easily reduced to solve scalar radiative transfer problems, which makes it possible to implement a single set of code for computing both the scalar and the vector Green's function.

Synthesis of α-MoO3 nanoplates using organic aliphatic acids and investigation of sunlight enhanced photodegradation of organic dyes

International Nuclear Information System (INIS)

Kumar, V. Vinod; Gayathri, K.; Anthony, Savarimuthu Philip

2016-01-01

Graphical abstract: Thermodynamically stable α-MoO 3 nanoplates and nanorods were synthesized using organic structure controlling agents and demonstrated sun light enhanced photocatalytic degradation of methylene blue (MB) and rhodamine blue (Rh-B) dyes in aqueous solution. - Highlights: • α-MoO 3 hexagonal nanoplates using organic structure controlling agents. • Tunable optical band gap of MoO 3 . • Demonstrated strong sun light mediated enhanced photodegradation of methylene blue and rhodamine blue. • Photodegradation did not use any other external oxidizing agents. - Abstract: Thermodynamically stable α-MoO 3 nanoplates were synthesized using organic aliphatic acids as structure controlling agents and investigated photocatalytic degradation of methylene blue (MB) and rhodamine blue (Rh-B) in presence of sun light. Three different organic aliphatic acids, citric acid (CA), tartaric acid (TA) and ethylene diamine tetra-acetic acid (EDTA), were employed to control morphologies. CA and TA predominantly produced extended hexagonal plates where EDTA gave nanorods as well as nanoplates. PXRD studies confirmed the formation of α-MoO 3 nanoparticles. HR-TEM and FE-SEM reveal the formation of plate morphologies with 20–40 nm thickness, 50–100 nm diameter and 600 nm lengths. The different morphologies of α-MoO 3 nanoparticles lead to the tunable optical band gap between 2.80 and 2.98 eV which was obtained from diffused reflectance spectra (DRS). Interestingly, the synthesized α-MoO 3 nanoplates exhibited strong photocatalytic degradation of MB and Rh-B up to 99% in presence of sun light without using any oxidizing agents.

Ultrathin NiO/NiFe2O4 Nanoplates Decorated Graphene Nanosheets with Enhanced Lithium Storage Properties

International Nuclear Information System (INIS)

Du, Dejian; Yue, Wenbo; Fan, Xialu; Tang, Kun; Yang, Xiaojing

2016-01-01

Highlights: • Ultrathin NiO/NiFe 2 O 4 nanoplates derived from NiFe layered double hydroxides are fabricated on the graphene. • NiO/NiFe 2 O 4 nanoplates on the graphene show superior electrochemical performance compared to pure NiO/NiFe 2 O 4 aggregates. • The effects of the content and the particle size/component of NiO/NiFe 2 O 4 on the electrochemical performances are studied. • Graphene-encapsulated NiO/NiFe 2 O 4 is prepared and shows slightly decreased performance compared to graphene-based composite. - Abstract: As anode materials for lithium-ion batteries, bicomponent metal oxide composites show high reversible capacities; but the morphology and particle size of the composites are hardly controllable, which may reduce their electrochemical properties. In this work, ultrathin NiO/NiFe 2 O 4 nanoplates with a diameter of 5 ∼ 7 nm and a thickness of ∼2 nm are controllably fabricated on the graphene derived from NiFe layered double hydroxides (NiFe-LDHs), and exhibit superior electrochemical performance compared to pure NiO/NiFe 2 O 4 aggregates without graphene. The nanosized NiO and NiFe 2 O 4 plates are separated from each other and the graphene substrate can prevent the aggregation of NiO/NiFe 2 O 4 as well as enhance the electronic conductivity of the composite, which is beneficial to improving the electrochemical performance. Moreover, the effects of the content and the particle size/component of NiO/NiFe 2 O 4 on the electrochemical performances are also studied in order to achieve optimal performance. Ultrathin NiO/NiFe 2 O 4 nanoplates are further encapsulated by graphene nanosheets and show slightly decreased performance compared to those supported by graphene nanosheets. The different electrochemical behaviors of graphene-containing composites may be attributed to the different interactions between graphene nanosheets and NiO/NiFe 2 O 4 nanoplates.

Jezdecké stezky v kraji Vysočina

OpenAIRE

Bendeová, Tereza

2014-01-01

This bachelor thesis discusses the topic of riding trails in the Vysočina region. At the beginning I discuss the role of equestrian tourism in the Czech Republic. There are briefly described origins and conditions of riding trails in the regions and also the list of the public support and grants for development of equestrian tourism. The next part focuses on chosen region and characterizes its natural and cultural heritage. There are also described several trails through the Vysočina region. ...

Visualizing Carrier Transport in Metal Halide Perovskite Nanoplates via Electric Field Modulated Photoluminescence Imaging.

Science.gov (United States)

Hu, Xuelu; Wang, Xiao; Fan, Peng; Li, Yunyun; Zhang, Xuehong; Liu, Qingbo; Zheng, Weihao; Xu, Gengzhao; Wang, Xiaoxia; Zhu, Xiaoli; Pan, Anlian

2018-05-09

Metal halide perovskite nanostructures have recently been the focus of intense research due to their exceptional optoelectronic properties and potential applications in integrated photonics devices. Charge transport in perovskite nanostructure is a crucial process that defines efficiency of optoelectronic devices but still requires a deep understanding. Herein, we report the study of the charge transport, particularly the drift of minority carrier in both all-inorganic CsPbBr 3 and organic-inorganic hybrid CH 3 NH 3 PbBr 3 perovskite nanoplates by electric field modulated photoluminescence (PL) imaging. Bias voltage dependent elongated PL emission patterns were observed due to the carrier drift at external electric fields. By fitting the drift length as a function of electric field, we obtained the carrier mobility of about 28 cm 2 V -1 S -1 in the CsPbBr 3 perovskite nanoplate. The result is consistent with the spatially resolved PL dynamics measurement, confirming the feasibility of the method. Furthermore, the electric field modulated PL imaging is successfully applied to the study of temperature-dependent carrier mobility in CsPbBr 3 nanoplates. This work not only offers insights for the mobile carrier in metal halide perovskite nanostructures, which is essential for optimizing device design and performance prediction, but also provides a novel and simple method to investigate charge transport in many other optoelectronic materials.

Enhanced visible-light activities for PEC water reduction of CuO nanoplates by coupling with anatase TiO2 and mechanism

International Nuclear Information System (INIS)

Li, Zhijun; Qu, Yang; He, Guangwen; Humayun, Muhammad; Chen, Shuangying; Jing, Liqiang

2015-01-01

Graphical abstract: - Highlights: • CuO nanoplates were successfully prepared as photocathodes for PEC water reduction. • Visible-light activity for PEC water reduction is improved after coupling with TiO 2 . • Improved PEC performance is attributed to the enhanced visible-excited charge separation. • Enhanced charge separation results from high-energy electron transfer from CuO to TiO 2 . - Abstract: CuO nanoplates were prepared by a feasible hydrothermal method, and then utilized as photocathodes for photoelectrochemical (PEC) water reduction in a neutral medium under visible-light irradiation. It is clearly demonstrated that the visible-light activities of the resulting nanoplates for PEC water reduction could be greatly improved after coupling with a proper amount of nanocrystalline anatase TiO 2 . This is attributed to the enhanced charge separation in the fabricated TiO 2 /CuO nanoplate composites mainly based on the atmosphere-controlled steady-state surface photovoltage spectra. Moreover, it is suggested that the enhanced charge separation resulted from the transfer of visible-light-excited high-energy electrons from CuO to TiO 2 as confirmed from the single-wavelength PEC behavior

Parallel Multi-Focusing Using Plane Wave Decomposition

DEFF Research Database (Denmark)

Misaridis, Thanassis; Munk, Peter; Jensen, Jørgen Arendt

2003-01-01

of desired 2-D sensitivity functions is specified, for multi-focusing in a number of directions. The field along these directions is decomposed to a sufficiently large (for accurate specification) number of plane waves, which are then back-propagated to all transducer elements. The contributions of all plane...... waves result in one time function per element. The numerical solution is presented and discussed. It contains pulses with a variation in central frequency and time-varying apodization across the aperture (dynamic apodization). The RMS difference between the transmitted field using the calculated pulse...... of the transmitted pulses is based on the directivity spectrum method, a generalization of the angular spectrum method, a generalization of the angular spectrum method, containing no evanescent waves. The underlying theory is based on the Fourier slice theorem, and field reconstruction from projections. First a set...

Shape transformation of silver nanospheres to silver nanoplates induced by redox reaction of hydrogen peroxide

Energy Technology Data Exchange (ETDEWEB)

Parnklang, Tewarak; Lamlua, Banjongsak; Gatemala, Harnchana; Thammacharoen, Chuchaat [Department of Chemistry, Faculty of Science, Chulalongkorn University, 254 Phyathai Road, Patumwan, Bangkok 10330 (Thailand); Kuimalee, Surasak [Industrial Chemistry and Textile Technology Programme, Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Lohwongwatana, Boonrat [Metallurgical Engineering Department, Faculty of Engineering, Chulalongkorn University, 254 Phyathai Road, Patumwan, Bangkok 10330 (Thailand); Ekgasit, Sanong, E-mail: sanong.e@chula.ac.th [Department of Chemistry, Faculty of Science, Chulalongkorn University, 254 Phyathai Road, Patumwan, Bangkok 10330 (Thailand)

2015-03-01

In this paper we demonstrate a simple and rapid shape transformation of silver nanospheres (AgNSs) to silver nanoplates (AgNPls) using the oxidation and reduction capabilities of hydrogen peroxide. AgNPls having tunable surface plasmon resonance across the visible region with average size of 40–100 nm and thickness of 10–15 nm can be fabricated within 2 min simply by adding H{sub 2}O{sub 2} into a colloid of AgNSs with average particle size of 7 nm. The efficiency of H{sub 2}O{sub 2} as a shape-transforming agent depends strongly on its concentration, pH of the AgNS colloid, and the employed stabilizers. H{sub 2}O{sub 2} oxidizes AgNSs to silver ions while concertedly reduces silver ions to silver atom necessary for the growth of AgNPls. The shape transformation reaction was conducted at a relatively low concentration of H{sub 2}O{sub 2} in order to minimize the oxidative dissolution while facilitating kinetically controlled growth of AgNPls under a near neutral pH. Polyvinyl-pyrrolidone is an effective steric stabilizer preventing aggregation while assisting the growth of AgNPls. Trisodium citrate inhibits the formation of AgNPls under the H{sub 2}O{sub 2} reduction as it forms a stable complex with silver ions capable of withstanding the weakly reducing power of H{sub 2}O{sub 2}. After a complete consumption of AgNSs, large nanoplates grows with an expense of smaller nanoplates. The growth continues until H{sub 2}O{sub 2} is exhausted. A high concentration H{sub 2}O{sub 2} promotes catalytic decomposition of H{sub 2}O{sub 2} on the surface of AgNSs and oxidative dissolution of AgNSs without a formation of AgNPls. - Graphical abstract: Proposed mechanism for the shape transformation of AgNSs to AgNPls induced by the oxidation/reduction of H{sub 2}O{sub 2}. - Highlights: • Rapid shape transformation of silver nanospheres to nanoplates by H{sub 2}O{sub 2}. • Structural change completes in 2 min with a yellow-to-blue color change. • Selective fabrication of

Few-Layer Nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with Highly Tunable Chemical Potential

KAUST Repository

Kong, Desheng

2010-06-09

A topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk band gap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that group V-VI materials Bi2Se3, Bi2Te3, and Sb2Te3 are TIs with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi2Te3 and Bi2Se3 nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependent color and contrast for nanoplates grown on oxidized silicon (300 nm SiO2/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface state effects in transport measurements. Low-temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential. © 2010 American Chemical Society.

Magnetic-field-induced Fermi-edge singularity in the tunneling current through an InAs self-assembled quantum dot

International Nuclear Information System (INIS)

Khanin, Yu. N.; Vdovin, E. E.; Eaves, L.; Larkin, I. A.; Patane, A.; Makarovskii, O. N.; Henini, M.

2007-01-01

The results of the investigation of tunneling transport through a GaAs/(AlGa)As/GaAs single-barrier heterostructure containing InAs self-assembled quantum dots at low temperatures are reported. An anomalous increase in the tunneling current through the quantum dots has been observed in the presence of a magnetic field both parallel and perpendicular to the current. This increase is a manifestation of a Fermi-edge singularity appearing in the current due to the interaction of a tunneling electron with the electron gas in an emitter

Synthesis and characterization of NiCo{sub 2}O{sub 4} nanoplates as efficient electrode materials for electrochemical supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Kim, Taehyun [Nanomaterials and System Lab, Department of Mechatronics Engineering, Engineering College, Jeju National University, Jeju 690-756 (Korea, Republic of); Ramadoss, Ananthakumar [Nanomaterials and System Lab, Faculty of Applied Energy System, Science and Engineering College, Jeju National University, Jeju 690-756 (Korea, Republic of); Saravanakumar, Balasubramaniam; Veerasubramani, Ganesh Kumar [Nanomaterials and System Lab, Department of Mechatronics Engineering, Engineering College, Jeju National University, Jeju 690-756 (Korea, Republic of); Kim, Sang Jae, E-mail: kimsangj@jejunu.ac.kr [Nanomaterials and System Lab, Department of Mechatronics Engineering, Engineering College, Jeju National University, Jeju 690-756 (Korea, Republic of); Nanomaterials and System Lab, Faculty of Applied Energy System, Science and Engineering College, Jeju National University, Jeju 690-756 (Korea, Republic of)

2016-05-01

Highlights: • NiCo{sub 2}O{sub 4} nanoplates were synthesized through a facile approach. • The NiCo{sub 2}O{sub 4} nanoplates electrode material exhibit a specific capacitance of 332 F g{sup −1} at 5 mV s{sup −1}. • The fabricated NiCo{sub 2}O{sub 4} electrode reveals 86% retention of initial capacitance after 2000 cycles. - Abstract: In the present work, NiCo{sub 2}O{sub 4} nanoplates were prepared by a facile, low temperature, hydrothermal method, followed by thermal annealing and used supercapacitor applications. The physico-chemical characterization of as-prepared materials were investigated by means of X-ray diffraction (XRD), Fourier transform infra-red spectroscopy (FT-IR) and field emission scanning electron microscopy (FE-SEM). The electrochemical measurements demonstrate that the NiCo{sub 2}O{sub 4} nanoplates electrode (NC-5) exhibits a high specific capacitance of 332 F g{sup −1} at a scan rate of 5 mV s{sup −1} and also retained about 86% of the initial specific capacitance value even after 2000 cycles at a current density of 2.5 A g{sup −1}. These results suggest that the fabricated electrode material has huge potential as a novel electrode material for electrochemical capacitors.

Hall and thermoelectric evaluation of p-type InAs

Energy Technology Data Exchange (ETDEWEB)

Wagener, M.C., E-mail: magnus.wagener@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Wagener, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

2009-12-15

This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

Hall and thermoelectric evaluation of p-type InAs

International Nuclear Information System (INIS)

Wagener, M.C.; Wagener, V.; Botha, J.R.

2009-01-01

This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

The fabrication of highly conductive and flexible Ag patterning through baking Ag nanosphere-nanoplate hybrid ink at a low temperature of 100 °C

Science.gov (United States)

Han, Y. D.; Zhang, S. M.; Jing, H. Y.; Wei, J.; Bu, F. H.; Zhao, L.; Lv, X. Q.; Xu, L. Y.

2018-04-01

With the aim of developing highly conductive ink for flexible electronics on heat-sensitive substrates, Ag nanospheres and nanoplates were mixed to synthesize hybrid inks. Five kinds of hybrid ink and two types of pure ink were written to square shape on Epson photo paper using rollerball pens, and sintered at a low temperature (100 °C). The microstructure, electrical resistivity, surface porosity, hardness and flexibility of silver patterns were systematically investigated and compared. It was observed that the optimal mixing ratio of nanospheres and nanoplates was 1:1, which equipped the directly written pattern with excellent electrical and mechanical properties. The electrical resistivity was 0.103 μΩ · m, only 6.5 times that of bulk silver. The enhancement compared to pure silver nanospheres or nanoplates based ink was due to the combined action of nanospheres and nanoplates. This demonstrates a valuable way to prepare Ag nanoink with good performance for printed/written electronics.

The fabrication of highly conductive and flexible Ag pattern through baking Ag nanospheres - nanoplates hybrid ink at a low temperature of 100°C.

Science.gov (United States)

Han, Y D; Zhang, Siming; Jing, H Y; Wei, Jun; Bu, Fanhui; Zhao, Lei; Lv, Xiaoqing; Xu, L Y

2018-01-24

With the aim of developing highly conductive ink for flexible electronics on heat-sensitive substrates, Ag nanospheres and nanoplates were mixed to synthesize hybrid inks. Five kinds of hybrid ink and two types of pure ink were written to square shape on Epson photo paper using rollerball pens and sintered at a low temperature (100℃). The microstructure, electrical resistivity, surface porosity, hardness and flexibility of silver patterns were systematically investigated and compared. It was observed that the optimal mixing ratio of nanospheres and nanoplates was 1:1, which equipped the directly written pattern with excellent electrical and mechanical properties. The electrical resistivity was 0.103 μΩ·m, which was only 6.5 times of bulk silver. The enhancement compared to pure silver nanospheres or nanoplates based ink was owing to the combined action of nanospheres and nanoplates. It was a valued way to prepare Ag nanoink with good performance for printed/written electronics. © 2018 IOP Publishing Ltd.

Spin effects in InAs self-assembled quantum dots

Directory of Open Access Journals (Sweden)

Brasil Maria

2011-01-01

Full Text Available Abstract We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs in the center of a GaAs quantum well (QW. We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.

The recombination correction and the dependence of the response of plane parallel chambers on the polarizing voltage in pulsed electron and photon beams

International Nuclear Information System (INIS)

Roos, M.; Derikum, K.

2000-01-01

Based on an experimental investigation of the recombination effect in plane parallel chambers, a relation is deduced that allows the correction to be calculated from the electrode spacing and from the dose per pulse. It is shown that the uncertainties caused by the application of the Boag formula for volume recombination (recommended in the International Code of Practice TRS-381) amount to not more than about 0.1% for conventional beams. Calculated recombinations are compared with experimental results concerning the dependence of the response of various commercial plane parallel chambers on the polarizing voltage. Since it cannot be excluded that particular chambers collect a non-negligible amount of charge from regions outside the designated collecting volume or that the effective polarizing voltage is reduced by poor contacts, it seems advisable to experimentally check the chambers before use and before application of the analytical relations. (author)

Platinum(iv) prodrug conjugated Pd@Au nanoplates for chemotherapy and photothermal therapy

Science.gov (United States)

Shi, Saige; Chen, Xiaolan; Wei, Jingping; Huang, Yizhuan; Weng, Jian; Zheng, Nanfeng

2016-03-01

Owing to the excellent near infrared (NIR) light absorption and efficient passive targeting toward tumor tissue, two-dimensional (2D) core-shell PEGylated Pd@Au nanoplates have great potential in both photothermal therapy and drug delivery systems. In this work, we successfully conjugate Pd@Au nanoplates with a platinum(iv) prodrug c,c,t-[Pt(NH3)2Cl2(O2CCH2CH2CO2H)2] to obtain a nanocomposite (Pd@Au-PEG-Pt) for combined photothermal-chemotherapy. The prepared Pd@Au-PEG-Pt nanocomposite showed excellent stability in physiological solutions and efficient Pt(iv) prodrug loading. Once injected into biological tissue, the Pt(iv) prodrug was easily reduced by physiological reductants (e.g. ascorbic acid or glutathione) into its cytotoxic and hydrophilic Pt(ii) form and released from the original nanocomposite, and the NIR laser irradiation could accelerate the release of Pt(ii) species. More importantly, Pd@Au-PEG-Pt has high tumor accumulation (29%ID per g), which makes excellent therapeutic efficiency at relatively low power density possible. The in vivo results suggested that, compared with single therapy the combined thermo-chemotherapy treatment with Pd@Au-PEG-Pt resulted in complete destruction of the tumor tissue without recurrence, while chemotherapy using Pd@Au-PEG-Pt without irradiation or photothermal treatment using Pd@Au-PEG alone did not. Our work highlights the prospects of a feasible drug delivery strategy of the Pt prodrug by using 2D Pd@Au nanoplates as drug delivery carriers for multimode cancer treatment.Owing to the excellent near infrared (NIR) light absorption and efficient passive targeting toward tumor tissue, two-dimensional (2D) core-shell PEGylated Pd@Au nanoplates have great potential in both photothermal therapy and drug delivery systems. In this work, we successfully conjugate Pd@Au nanoplates with a platinum(iv) prodrug c,c,t-[Pt(NH3)2Cl2(O2CCH2CH2CO2H)2] to obtain a nanocomposite (Pd@Au-PEG-Pt) for combined photothermal-chemotherapy. The

20 CFR 668.710 - What planning documents must an INA grantee submit?

Science.gov (United States)

2010-04-01

... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What planning documents must an INA grantee... Planning/Funding Process § 668.710 What planning documents must an INA grantee submit? Each grantee... participant services and expenditures covering the two-year planning cycle. We will, in consultation with the...

A soft lithographic approach to fabricate InAs nanowire field-effect transistors

DEFF Research Database (Denmark)

Madsen, Morten; Lee, S. H.; Shin, S.-H.

2018-01-01

-down approach and an epitaxial layer transfer process, using MBE-grown ultrathin InAs as a source wafer. The width of the InAs nanowires was controlled using solvent-assisted nanoscale embossing (SANE), descumming, and etching processes. By optimizing these processes, NWs with a width less than 50 nm were...

Strong composition-dependent disorder in InAs1-xNx alloys

International Nuclear Information System (INIS)

Benaissa, H.; Zaoui, A.; Ferhat, M.

2009-01-01

We investigate the main causes of disorder in the InAs 1-x N x alloys (x = 0, 0.03125, 0.0625, 0.09375, 0.125, 0.25, 0.5, 0.75, 0.875, 0.90625, 0.9375, 0.96875 and 1). The calculation is based on the density-functional theory in the local-density approximation. We use a plane wave-expansion non-norm conserving ab initio Vanderbilt pseudopotentials. To avoid the difficulty of considering the huge number of atomic configurations, we use an appropriate strategy in which we consider four configurations for a given composition where the N atoms are not randomly distributed. We mainly show that the band gap decreases (increases) rapidly with increasing (decreasing) compositions of N. As a consequence the optical band gap bowing is found to be strong and composition dependent. The obtained compounds, from these alloys, may change from semi-conducting to metal (passing to a negative bowing) and could be useful for device applications, especially at certain composition.

Nanoparticle-mediated nonclassical crystal growth of sodium fluorosilicate nanowires and nanoplates

Directory of Open Access Journals (Sweden)

Hongxia Li

2011-12-01

Full Text Available We observed nonclassical crystal growth of the sodium fluorosilicate nanowires, nanoplates, and hierarchical structures through self-assembly and aggregation of primary intermediate nanoparticles. Unlike traditional ion-by-ion crystallization, the primary nanoparticles formed first and their subsequent self-assembly, fusion, and crystallization generated various final crystals. These findings offer direct evidences for the aggregation-based crystallization mechanism.

The fabrication of highly conductive and flexible Ag patterning through baking Ag nanosphere-nanoplate hybrid ink at a low temperature of 100 °C.

Science.gov (United States)

Han, Y D; Zhang, S M; Jing, H Y; Wei, J; Bu, F H; Zhao, L; Lv, X Q; Xu, L Y

2018-02-12

With the aim of developing highly conductive ink for flexible electronics on heat-sensitive substrates, Ag nanospheres and nanoplates were mixed to synthesize hybrid inks. Five kinds of hybrid ink and two types of pure ink were written to square shape on Epson photo paper using rollerball pens, and sintered at a low temperature (100 °C). The microstructure, electrical resistivity, surface porosity, hardness and flexibility of silver patterns were systematically investigated and compared. It was observed that the optimal mixing ratio of nanospheres and nanoplates was 1:1, which equipped the directly written pattern with excellent electrical and mechanical properties. The electrical resistivity was 0.103 μΩ · m, only 6.5 times that of bulk silver. The enhancement compared to pure silver nanospheres or nanoplates based ink was due to the combined action of nanospheres and nanoplates. This demonstrates a valuable way to prepare Ag nanoink with good performance for printed/written electronics.

Formation Mechanism and Gas-Sensing Performance of La/ZnO Nanoplates Synthesized by a Facile Hydrothermal Method

Science.gov (United States)

Li, Yan; Chen, Li-Li; Lian, Xiao-Xue; Li, Jiao

2018-03-01

La/ZnO nanoplates were successfully synthesized by a facile hydrothermal method. The structure and morphology of the products were characterized using x-ray diffraction and scanning electron microscopy. The gas-sensing properties of the as-prepared La/ZnO were also tested with a series of target gases, and a possible gas sensing mechanism was discussed. The results show that the as-prepared La/ZnO nanoparticles are mainly composde of a wurtzite ZnO and a little La2O3 phase with face-centered structure, showing a uniform plate-like morphology with a thickness of about 50 nm. The La/ZnO nanoplate-based sensors display a significantly better sensing performance than pure ZnO for the detection of acetone and ethanol. The 3 mol.% La/ZnO sensor shows high sensitivity (127) to 200 ppm acetone at a low working temperature (330°C), and 120-200 ppm ethanol at 300°C. Moreover, its response and recovery time for acetone and ethanol were 3 s and 4 s, 18 s and 11 s, respectively. This work demonstrates that La/ZnO nanoplate-based sensors have potential applications as practical sensors for acetone and ethanol.

Intense luminescence emission from rare-earth-doped MoO3 nanoplates and lamellar crystals for optoelectronic applications

International Nuclear Information System (INIS)

Vila, M; Díaz-Guerra, C; Jerez, D; Piqueras, J; Lorenz, K; Alves, E

2014-01-01

Strong and stable room-temperature photoluminescence (PL) emission is achieved in MoO 3 nanoplates and lamellar crystals doped with Er and Eu by ion implantation and subsequent annealing. Micro-Raman and PL spectroscopy reveal that optical activation of the rare earth ions and recovery of the original MoO 3 structure are achieved for shorter annealing treatments and for lower temperatures in nanoplates, as compared with lamellar crystals. Er seems to be more readily incorporated into optically active sites in the oxide lattice than Eu. The influence of the dimensionality of the host sample on the characteristics of the PL emission of both rare earth dopants is addressed. (paper)

Three-dimensional radiative transfer in an isotropically scattering, plane-parallel medium: generalized X- and Y-functions

International Nuclear Information System (INIS)

Mueller, D.W.; Crosbie, A.L.

2005-01-01

The topic of this work is the generalized X- and Y-functions of multidimensional radiative transfer. The physical problem considered is spatially varying, collimated radiation incident on the upper boundary of an isotropically scattering, plane-parallel medium. An integral transform is used to reduce the three-dimensional transport equation to a one-dimensional form, and a modified Ambarzumian's method is used to derive coupled, integro-differential equations for the source functions at the boundaries of the medium. The resulting equations are said to be in double-integral form because the integration is over both angular variables. Numerical results are presented to illustrate the computational characteristics of the formulation

2-D modeling of dual-mode acoustic phonon excitation of a triangular nanoplate

International Nuclear Information System (INIS)

Tai, Po-Tse; Yu, Pyng; Tang, Jau

2010-01-01

Graphical abstract: Modeling the lattice dynamics of a triangular plate with the arrows indicating the direction of impulsive thermal stress. We investigated ultrafast structural dynamics of triangular nanoplates based on 2-D Fermi-Pasta-Ulam model to explain coherent acoustic phonon excitation in nanoprisms. - Abstract: In this theoretical work, we investigated coherent phonon excitation of a triangular nanoplate based on 2-D Fermi-Pasta-Ulam lattice model. Based on the two-temperature model commonly used in description of laser heating of metals, we considered two kinds of forces related to electronic and lattice stresses. Based on extensive simulation and analysis, we identified two major planar phonon modes, namely, a standing wave mode related to the triangle bisector and another mode corresponding to half of the side length. This work elucidates the roles of laser-induced electronic stress and lattice stress in controlling the initial phase and the amplitude ratio between these two phonon modes.

Spectroscopic properties of triangular silver nanoplates immobilized on polyelectrolyte multilayer-modified glass substrates

Science.gov (United States)

Rabor, Janice B.; Kawamura, Koki; Muko, Daiki; Kurawaki, Junichi; Niidome, Yasuro

2017-07-01

Fabrication of surface-immobilized silver nanostructures with reproducible plasmonic properties by dip-coating technique is difficult due to shape alteration. To address this challenge, we used a polyelectrolyte multilayer to promote immobilization of as-received triangular silver nanoplates (TSNP) on a glass substrate through electrostatic interaction. The substrate-immobilized TSNP were characterized by absorption spectrophotometry and scanning electron microscopy. The bandwidth and peak position of localized surface plasmon resonance (LSPR) bands can be tuned by simply varying the concentration of the colloidal solution and immersion time. TSNP immobilized from a higher concentration of colloidal solution with longer immersion time produced broadened LSPR bands in the near-IR region, while a lower concentration with shorter immersion time produced narrower bands in the visible region. The shape of the nanoplates was retained even at long immersion time. Analysis of peak positions and bandwidths also revealed the point at which the main species of the immobilization had been changed from isolates to aggregates.

Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

Science.gov (United States)

Schukfeh, M I; Storm, K; Hansen, A; Thelander, C; Hinze, P; Beyer, A; Weimann, T; Samuelson, L; Tornow, M

2014-11-21

We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.

Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments

International Nuclear Information System (INIS)

Schukfeh, M I; Hansen, A; Tornow, M; Storm, K; Thelander, C; Samuelson, L; Hinze, P; Weimann, T; Beyer, A

2014-01-01

We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor–liquid–solid grown InAs nanowires with embedded InP segments of 10–60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap. (paper)

Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates

Directory of Open Access Journals (Sweden)

Lei Wen

2011-01-01

Full Text Available Abstract Catalyst-free, vertical array of InAs nanowires (NWs are grown on Si (111 substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst-free growth of InAs NWs is governed by the nucleation kinetics. The longitudinal optical and transverse optical (TO mode of InAs NWs present a phonon frequency slightly lower than those of InAs bulk materials, which are speculated to be caused by the defects in the NWs. A surface optical mode is also observed for the InAs NWs, which shifts to lower wave-numbers when the diameter of NWs is decreased, in agreement with the theory prediction. The carrier concentration is extracted to be 2.25 × 1017 cm-3 from the Raman line shape analysis. A splitting of TO modes is also observed. PACS: 62.23.Hj; 81.07.Gf; 63.22.Gh; 61.46.Km

Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates

CSIR Research Space (South Africa)

Baisitse, TR

2006-07-01

Full Text Available Motivation for the research: Interest exists in III-V semiconducting materials (InAs, GaSb, InSb and related alloys) for the detection of infrared radiation; Such materials could be used as alternatives for future infrared detectors and various...

Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field

Science.gov (United States)

Vigneau, Florian; Zeng, Zaiping; Escoffier, Walter; Caroff, Philippe; Leturcq, Renaud; Niquet, Yann-Michel; Raquet, Bertrand; Goiran, Michel

2018-03-01

The magnetoconductance of a long channel InAs nanowire based field effect transistor in the quasiballistic regime under large magnetic field is investigated. The quasi-1D nanowire is fully characterized by a bias voltage spectroscopy and measurements under magnetic field up to 50 T applied either perpendicular or parallel to the nanowire axis lifting the spin and orbital degeneracies of the subbands. Under normal magnetic field, the conductance shows quantized steps due to the backscattering reduction and a decrease due to depopulation of the 1D modes. Under axial magnetic field, a quasioscillatory behavior is evidenced due to the coupling of the magnetic field with the angular momentum of the wave function. In addition the formation of cyclotron orbits is highlighted under high magnetic field. The experimental results are compared with theoretical calculation of the 1D band structure and related parameters.

Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

International Nuclear Information System (INIS)

Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

2004-01-01

We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated surface In layer floating on the GaInAsP buffer layer

Positioning of self-assembled InAs quantum dots by focused ion beam implantation

International Nuclear Information System (INIS)

Mehta, M.

2007-01-01

Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 μm was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence spectra from positioned QDs confirm their good optical quality. (orig.)

3D hierarchical porous cobalt monoxide nanoplates with a book-like structure derived from Co(CO3)0.5(OH)·0.11H2O: two-steps oriented attachment and high-performance asymmetric supercapacitors

Science.gov (United States)

Xiao, Yuanhua; Zhao, Xiaobing; Jin, Qingxian; Su, Dangcheng; Wang, Xuezhao; Wu, Shide; Zhou, Liming; Fang, Shaoming

2017-10-01

3D Hierarchical porous cobalt monoxide (CoO) nanoplates with a book-like structure derive from Co(CO3)0.5(OH)·0.11H2O by a two-steps oriented attachment mechanism in the solvothermal process. Firstly, nanoplates are formed by oriented attachment of nanorods. Secondly, new nanoplates could be generated on the old nanoplates by a sloped oriented attachment of nanorods with the based nanoplates shape into a 3D hierarchical book-like structure. The CoO nanoplates show superior specific capacitance about 1221.7 F g-1 at 1 A g-1 to most of the Co-based supercapacitor materials up to date. An asymmetric supercapacitor (ASC) based on positive electrode CoO and negative electrode active carbon (AC) exhibits an excellent energy density of 50.1 Wh kg-1 at a power density of 589 W kg-1 and gets a satisfactory cycling stability (86.3% of its initial capacitance retention at 10 A g-1 over 10 000 cycles).

20 CFR 668.650 - Can INA grantees exclude segments of the eligible population?

Science.gov (United States)

2010-04-01

... eligible population? 668.650 Section 668.650 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION... population? (a) No, INA grantees cannot exclude segments of the eligible population. INA grantees must document in their Two Year Plan that a system is in place to afford all members of the eligible population...

Growth-interruption-induced low-density InAs quantum dots on GaAs

International Nuclear Information System (INIS)

Li, L. H.; Alloing, B.; Chauvin, N.; Fiore, A.; Patriarche, G.

2008-01-01

We investigate the use of growth interruption to obtain low-density InAs quantum dots (QDs) on GaAs. The process was realized by Ostwald-type ripening of a thin InAs layer. It was found that the optical properties of the QDs as a function of growth interruption strongly depend on InAs growth rate. By using this approach, a low density of QDs (4 dots/μm 2 ) with uniform size distribution was achieved. As compared to QDs grown without growth interruption, a larger energy separation between the QD confined levels was observed, suggesting a situation closer to the ideal zero-dimensional system. Combining with an InGaAs capping layer such as In-rich QDs enable 1.3 μm emission at 4 K

Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence

International Nuclear Information System (INIS)

Letoublon, A.; Favre-Nicolin, V.; Renevier, H.; Proietti, M.G.; Monat, C.; Gendry, M.; Marty, O.; Priester, C.

2005-01-01

We report on the study of strain, size and composition of small-size encapsulated semiconductor nanostructures. We show that the partial structure factor of As atoms in InAs stick-like nanostructures (quantum sticks), embedded in InP, can be directly extracted from grazing incidence anomalous X-ray diffraction maps at the As K-edge. We have recovered the average height and strain of the islands and determined their composition. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is 2.54 nm. The InAs out of plane deformation, relative to InP, is equal to 6.1%. Fixed-Q anomalous diffraction spectra, measured at the As K-edge, in grazing incidence provide clear evidence of pure InAs QSs. This is confirmed by the analysis of the diffraction anomalous fine structure (DAFS) that also gives a direct way to recover the strain accomodation inside the quantum sticks. Finite difference method calculations reproduce well the diffraction data. Chemical mixing at interfaces is at most 1 ML. This paper shows that ultimate application of anomalous diffraction and DAFS together with reciprocal space maps is a powerful method to sudy the structural properties of nanostructures

Awareness of the Vysočina Regional Food Labels With Context of Their Media Presence

Directory of Open Access Journals (Sweden)

Martina Chalupová

2016-01-01

Full Text Available The article presents results of research study that focused on the recognition of the Vysočina regional labels among the consumers in the region in connection with media analysis about the topic. Research among consumers was conducted in each district of Vysočina Region (Jihlava, Žďár nad Sázavou, Třebíč, Havlíčkův Brod and Pelhřimov by interviewing a sample of 819 respondents, selected by quota sampling methods. The research was aimed at analysing the ability of respondents to recognise and differentiate two existing regional labels VYSOČINA Regional Product®, Regional Food Vysočina Region and also nonexistent brand From Our Region Vysočina, created by authors. Data have been processed with correspondence analysis and showed that respondents connect different characteristics with the labels. Media analysis of the Vysočina regional labels revealed that media may help building awareness about the labels but they do not shape respondents’ views on them. Examining the link between the frequency of different types of information in media and their potential impact on the labels’ pereception by consumers have shown distorted image. Stronger consensus between research and media analysis have been examined only on importance of products’ origin, which can be viewed as a logical inference from the name of the labels.

Simultaneous orthogonal plane imaging.

Science.gov (United States)

Mickevicius, Nikolai J; Paulson, Eric S

2017-11-01

Intrafraction motion can result in a smearing of planned external beam radiation therapy dose distributions, resulting in an uncertainty in dose actually deposited in tissue. The purpose of this paper is to present a pulse sequence that is capable of imaging a moving target at a high frame rate in two orthogonal planes simultaneously for MR-guided radiotherapy. By balancing the zero gradient moment on all axes, slices in two orthogonal planes may be spatially encoded simultaneously. The orthogonal slice groups may be acquired with equal or nonequal echo times. A Cartesian spoiled gradient echo simultaneous orthogonal plane imaging (SOPI) sequence was tested in phantom and in vivo. Multiplexed SOPI acquisitions were performed in which two parallel slices were imaged along two orthogonal axes simultaneously. An autocalibrating phase-constrained 2D-SENSE-GRAPPA (generalized autocalibrating partially parallel acquisition) algorithm was implemented to reconstruct the multiplexed data. SOPI images without intraslice motion artifacts were reconstructed at a maximum frame rate of 8.16 Hz. The 2D-SENSE-GRAPPA reconstruction separated the parallel slices aliased along each orthogonal axis. The high spatiotemporal resolution provided by SOPI has the potential to be beneficial for intrafraction motion management during MR-guided radiation therapy or other MRI-guided interventions. Magn Reson Med 78:1700-1710, 2017. © 2016 International Society for Magnetic Resonance in Medicine. © 2016 International Society for Magnetic Resonance in Medicine.

InAs quantum dots as charge storing elements for applications in flash memory devices

Energy Technology Data Exchange (ETDEWEB)

Islam, Sk Masiul; Biswas, Pranab [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India)

2015-08-15

Graphical abstract: - Highlights: • Catalyst-free growth of InAs quantum dots was carried out on high-k ZrO{sub 2}. • Memory device with InAs quantum dots as charge storage nodes are fabricated. • Superior memory window, low leakage and reasonably good retention were observed. • Carrier transport phenomena are explained in both program and erase operations. - Abstract: InAs quantum dots (QDs) were grown by metal organic chemical vapor deposition technique to use them as charge storage nodes. Uniform QDs were formed with average diameter 5 nm and height 5–10 nm with a density of 2 × 10{sup 11} cm{sup −2}. The QDs were grown on high-k dielectric layer (ZrO{sub 2}), which was deposited onto ultra-thin GaP passivated p-GaAs (1 0 0) substrate. A charge storage device with the structure Metal/ZrO{sub 2}/InAs QDs/ZrO{sub 2}/(GaP)GaAs/Metal was fabricated. The devices containing InAs QDs exhibit superior memory window, low leakage current density along with reasonably good charge retention. A suitable electronic band diagram corresponding to programming and erasing operations was proposed to explain the operation.

Conformal spinel/layered heterostructures of Co3O4 shells grown on single-crystal Li-rich nanoplates for high-performance lithium-ion batteries

Science.gov (United States)

Xin, Yue; Lan, Xiwei; Chang, Peng; Huang, Yaqun; Wang, Libin; Hu, Xianluo

2018-07-01

Lithium-rich layered materials have received much attention because of their high specific capacity and high energy density. Unfortunately, they suffer from irreversible capacity loss, low initial Coulombic efficiency and poor cyclability. Here we report a facile co-precipitation method to synthesize uniform single-crystal Li-rich Li[Li0.2Mn0.54Ni0.13Co0.13]O2 nanoplates without using any template. Subsequently, a Co3O4 shell is in situ grown on the Li-rich nanoplates through a hydrothermal method, leading to spinel/layered heterostructures. The electrode made of conformal heterostructured Li-rich/Co3O4 nanoplates delivers a high discharge capacity of 296 mA h g-1 at 0.1 C with an initial Coulombic efficiency of 84%. The capacity retention reaches 83.2% with a discharge capacity of 223 mA h g-1 after 160 cycles at 0.2 C during the potential window ranging from 2.0 to 4.8 V. The enhanced electrochemical performance of the resulting Li-rich/Co3O4 nanoplates benefits from the unique conformal heterostructure as well as the electrochemically active LixCoOy generated between the reaction of Co3O4 shells and the extracted Li2O during charging/discharging processes.

INA's Preparations for Liberalised Energy Market and Privatisation

International Nuclear Information System (INIS)

Dragicevic, T.; Kolundzic, S.

2001-01-01

Before opening of the market, energy entities must carry out numerous preparations in order to be ready for challenges of a competitive environment. Some preparations refer to legal and organisational issues, but many of them encompass reengineering of business processes, cost reduction schemes and various improvement measures aimed at maintenance or acquisition of a competitive advantage. INA is actively pursuing some of the above measures, but now, by the end of 2001, we also have to deal with preparations for privatisation. These two processes have some important common elements, competitiveness being certainly one of them. INA must work toward improving its competitive strength in the gas sector, in refining, in marketing of oil products, but also in various supporting activities. However, there are constraints that we have to observe, mainly related to social issues.(author)

Controlled growth of high-density CdS and CdSe nanorod arrays on selective facets of two-dimensional semiconductor nanoplates

KAUST Repository

Wu, Xue-Jun

2016-03-14

The rational synthesis of hierarchical three-dimensional nanostructures with specific compositions, morphologies and functionalities is important for applications in a variety of fields ranging from energy conversion and electronics to biotechnology. Here, we report a seeded growth approach for the controlled epitaxial growth of three types of hierarchical one-dimensional (1D)/two-dimensional (2D) nanostructures, where nanorod arrays of II-VI semiconductor CdS or CdSe are grown on the selective facets of hexagonal-shaped nanoplates, either on the two basal facets of the nanoplate, or on one basal facet, or on the two basal facets and six side facets. The seed engineering of 2D hexagonal-shaped nanoplates is the key factor for growth of the three resulting types of 1D/2D nanostructures. The wurtzite- and zinc-blende-type polymorphs of semiconductors are used to determine the facet-selective epitaxial growth of 1D nanorod arrays, resulting in the formation of different hierarchical three-dimensional (3D) nanostructures. © 2016 Macmillan Publishers Limited. All rights reserved.

Parallelization of the FLAPW method

International Nuclear Information System (INIS)

Canning, A.; Mannstadt, W.; Freeman, A.J.

1999-01-01

The FLAPW (full-potential linearized-augmented plane-wave) method is one of the most accurate first-principles methods for determining electronic and magnetic properties of crystals and surfaces. Until the present work, the FLAPW method has been limited to systems of less than about one hundred atoms due to a lack of an efficient parallel implementation to exploit the power and memory of parallel computers. In this work we present an efficient parallelization of the method by division among the processors of the plane-wave components for each state. The code is also optimized for RISC (reduced instruction set computer) architectures, such as those found on most parallel computers, making full use of BLAS (basic linear algebra subprograms) wherever possible. Scaling results are presented for systems of up to 686 silicon atoms and 343 palladium atoms per unit cell, running on up to 512 processors on a CRAY T3E parallel computer

Parallelization of the FLAPW method

Science.gov (United States)

Canning, A.; Mannstadt, W.; Freeman, A. J.

2000-08-01

The FLAPW (full-potential linearized-augmented plane-wave) method is one of the most accurate first-principles methods for determining structural, electronic and magnetic properties of crystals and surfaces. Until the present work, the FLAPW method has been limited to systems of less than about a hundred atoms due to the lack of an efficient parallel implementation to exploit the power and memory of parallel computers. In this work, we present an efficient parallelization of the method by division among the processors of the plane-wave components for each state. The code is also optimized for RISC (reduced instruction set computer) architectures, such as those found on most parallel computers, making full use of BLAS (basic linear algebra subprograms) wherever possible. Scaling results are presented for systems of up to 686 silicon atoms and 343 palladium atoms per unit cell, running on up to 512 processors on a CRAY T3E parallel supercomputer.

Silver nanoplates-based colorimetric iodide recognition and sensing using sodium thiosulfate as a sensitizer

Energy Technology Data Exchange (ETDEWEB)

Hou, Xinyan; Chen, Shu, E-mail: chenshumail@gmail.com; Tang, Jian; Xiong, Yuan; Long, Yunfei, E-mail: l_yunfei927@163.com

2014-05-01

Highlights: • A new colorimetric iodide detection strategy based on triangular Ag nanoplate. • Sodium thiosulfate performed as a sensitizer. • Formation of insoluble AgI on the surface of Ag nanoplate. • This method has the advantages of good selectivity and high sensitivity. Abstract: A colorimetric method for the recognition and sensing of iodide ions (I⁻) has been developed by utilizing the reactions between triangular silver nanoplates (TAg-NPs) and I⁻ in the presence of sodium thiosulfate (Na₂S₂O₃). Specifically, I⁻ together with Na₂S₂O₃ can induce protection of TAg-NPs owing to the formation of insoluble AgI, as confirmed by the high-resolution transmission electron microscopy (HRTEM). In the absence of Na₂S₂O₃, the etching reactions on TAg-NPs were observed not only by I⁻ but also other halides ions. The Na₂S₂O₃ plays as a sensitizer in this system, which improved the selectivity and sensitivity. The desired colorimetric detection can be achieved by measuring the change of the absorption peak wavelength corresponding to localized surface plasmon resonance (LSPR) with UV–vis spectrophotometer or recognized by naked eye observation. The results show that the shift of the maximum absorption wavelength (Δλ) of the TAg-NPs/Na₂S₂O₃/I⁻ mixture was proportional to the concentration of I⁻ in the range 1.0 × 10⁻⁹–1.0 × 10⁻⁶ mol L⁻¹. Moreover, no other ions besides I⁻ can induce an eye discernible color change as low as 1.0 × 10⁻⁷ mol L⁻¹. Finally, this method was successfully applied for I⁻ determination in kelp samples.

Preparation of novel silver nanoplates/graphene composite and their application in vanillin electrochemical detection

Energy Technology Data Exchange (ETDEWEB)

Huang, Linhong [Fujian Key Lab of Medical Instrument and Pharmaceutical Technology, Yishan Campus, Fuzhou University, Fuzhou, Fujian 350002 (China); Institute of Research for Functional Materials, Fuzhou University, Yishan Campus, Fuzhou University, Fuzhou, Fujian 350002 (China); College of Chemistry and Chemical Engineering, Qishan Campus, Fuzhou University, Fuzhou, Fujian 350108 (China); Hou, Keyu; Jia, Xiao [Institute of Research for Functional Materials, Fuzhou University, Yishan Campus, Fuzhou University, Fuzhou, Fujian 350002 (China); College of Chemistry and Chemical Engineering, Qishan Campus, Fuzhou University, Fuzhou, Fujian 350108 (China); Pan, Haibo, E-mail: hbpan@fzu.edu.cn [Fujian Key Lab of Medical Instrument and Pharmaceutical Technology, Yishan Campus, Fuzhou University, Fuzhou, Fujian 350002 (China); Institute of Research for Functional Materials, Fuzhou University, Yishan Campus, Fuzhou University, Fuzhou, Fujian 350002 (China); College of Chemistry and Chemical Engineering, Qishan Campus, Fuzhou University, Fuzhou, Fujian 350108 (China); Du, Min [Fujian Key Lab of Medical Instrument and Pharmaceutical Technology, Yishan Campus, Fuzhou University, Fuzhou, Fujian 350002 (China)

2014-05-01

Hexagonal Ag nanoplates (NPs) were synthesized by polyvinylpyrrolidone (PVP) and trisodium citrate (TSC) which selectively absorbed to Ag (100) and Ag (111) surfaces, then were anchored to graphene (GN) to form novel Ag NPs/GN composite. The thickness of Ag NPs is ∼ 4 nm and the length is 18–66 nm. Transmission electron microscopy (TEM) image shows that the plates are f-c-c crystals containing {111} facets on their two planar surfaces. Zeta potential indicated that the surface of Ag NPs/GN is negatively charged while vanillin is positively charged. Thus Ag NPs/GN modified on glass carbon electrodes (GCE) allowed abundant adsorption for vanillin and electron transfer between vanillin and Ag NPs/GN/GCE. Square wave voltammetry (SWV) results indicated that the over potential on Ag NPs/GN/GCE negatively shifts 52 mV than that on Ag NPs/GCE. Ag NPs/GN with enhanced surface area and good conductivity exhibited an excellent electrocatalytic activity toward the oxidation of vanillin. The corresponding linear range was estimated to be from 2 to 100 μM (R{sup 2} = 0.998), and the detection limit is 3.32 × 10{sup −7} M (S/N = 3). The as-prepared vanillin sensor exhibits good selectivity and potential application in practical vanillin determination. - Highlights: • Hexagonal Ag nanoplates were synthesized by controlling of PVP and trisodium citrate. • Ag nanoplates/GN composite allowed adsorption and electron transfer of vanillin. • The composite with good dispersion exhibits enhanced surface area and good catalysis. • Vanillin on the Ag NPs/GN/GCE shows high sensitivity and selectivity.

Preparation of novel silver nanoplates/graphene composite and their application in vanillin electrochemical detection

International Nuclear Information System (INIS)

Huang, Linhong; Hou, Keyu; Jia, Xiao; Pan, Haibo; Du, Min

2014-01-01

Hexagonal Ag nanoplates (NPs) were synthesized by polyvinylpyrrolidone (PVP) and trisodium citrate (TSC) which selectively absorbed to Ag (100) and Ag (111) surfaces, then were anchored to graphene (GN) to form novel Ag NPs/GN composite. The thickness of Ag NPs is ∼ 4 nm and the length is 18–66 nm. Transmission electron microscopy (TEM) image shows that the plates are f-c-c crystals containing {111} facets on their two planar surfaces. Zeta potential indicated that the surface of Ag NPs/GN is negatively charged while vanillin is positively charged. Thus Ag NPs/GN modified on glass carbon electrodes (GCE) allowed abundant adsorption for vanillin and electron transfer between vanillin and Ag NPs/GN/GCE. Square wave voltammetry (SWV) results indicated that the over potential on Ag NPs/GN/GCE negatively shifts 52 mV than that on Ag NPs/GCE. Ag NPs/GN with enhanced surface area and good conductivity exhibited an excellent electrocatalytic activity toward the oxidation of vanillin. The corresponding linear range was estimated to be from 2 to 100 μM (R 2 = 0.998), and the detection limit is 3.32 × 10 −7 M (S/N = 3). The as-prepared vanillin sensor exhibits good selectivity and potential application in practical vanillin determination. - Highlights: • Hexagonal Ag nanoplates were synthesized by controlling of PVP and trisodium citrate. • Ag nanoplates/GN composite allowed adsorption and electron transfer of vanillin. • The composite with good dispersion exhibits enhanced surface area and good catalysis. • Vanillin on the Ag NPs/GN/GCE shows high sensitivity and selectivity

Calibration methods of plane-parallel ionization chambers used in electron dosimetry; Metodos de calibracao de camaras de ionizacao de placas paralelas para dosimetria de feixes de eletrons

Energy Technology Data Exchange (ETDEWEB)

Bulla, Roseli Tadeu

1999-07-01

The use of linear accelerators in radiotherapy is of great importance in Medicine, and according to international recommendations the electron beam dosimetry has to be performed using plane-parallel ionization chambers, previously calibrated in standard gamma radiation fields at accredited laboratories. In this work, calibration methods of plane-parallel ionization chambers used in dosimetry procedures of high energy electron beams of clinical accelerators were presented, tested and intercompared. The experiments were carried out using gamma radiation beams of {sup 60} Co at the Calibration Laboratory of Clinical Dosemeters at IPEN and electron beams od 4 to 16 MeV at the Radiotherapy Department of Hospital Israelita Albert Einstein, Sao Paulo. A method was chosen to be established at IPEN. Proposals of the calibration procedure, calibration certificate and data sheets are presented. (author)

Bending analysis of embedded nanoplates based on the integral formulation of Eringen's nonlocal theory using the finite element method

Science.gov (United States)

Ansari, R.; Torabi, J.; Norouzzadeh, A.

2018-04-01

Due to the capability of Eringen's nonlocal elasticity theory to capture the small length scale effect, it is widely used to study the mechanical behaviors of nanostructures. Previous studies have indicated that in some cases, the differential form of this theory cannot correctly predict the behavior of structure, and the integral form should be employed to avoid obtaining inconsistent results. The present study deals with the bending analysis of nanoplates resting on elastic foundation based on the integral formulation of Eringen's nonlocal theory. Since the formulation is presented in a general form, arbitrary kernel functions can be used. The first order shear deformation plate theory is considered to model the nanoplates, and the governing equations for both integral and differential forms are presented. Finally, the finite element method is applied to solve the problem. Selected results are given to investigate the effects of elastic foundation and to compare the predictions of integral nonlocal model with those of its differential nonlocal and local counterparts. It is found that by the use of proposed integral formulation of Eringen's nonlocal model, the paradox observed for the cantilever nanoplate is resolved.

Transformational plane geometry

CERN Document Server

Umble, Ronald N

2014-01-01

Axioms of Euclidean Plane Geometry The Existence and Incidence Postulates The Distance and Ruler Postulates The Plane Separation Postulate The Protractor Postulate The Side-Angle-Side Postulate and the Euclidean Parallel Postulate Theorems of Euclidean Plane Geometry The Exterior Angle Theorem Triangle Congruence Theorems The Alternate Interior Angles Theorem and the Angle Sum Theorem Similar Triangles Introduction to Transformations, Isometries, and Similarities Transformations Isometries and SimilaritiesAppendix: Proof of Surjectivity Translations, Rotations, and Reflections Translations Rotations Reflections Appendix: Geometer's Sketchpad Commands Required by Exploratory Activities Compositions of Translations, Rotations, and Reflections The Three Points Theorem Rotations as Compositions of Two Reflections Translations as Compositions of Two Halfturns or Two Reflections The Angle Addition Theorem Glide Reflections Classification of Isometries The Fundamental Theorem and Congruence Classification of Isometr...

Microwave Synthesis of Zinc Hydroxy Sulfate Nanoplates and Zinc Oxide Nanorods in the Classroom

Science.gov (United States)

Dziedzic, Rafal M.; Gillian-Daniel, Anne Lynn; Peterson, Greta M.; Martínez-Herna´ndez, Kermin J.

2014-01-01

In this hands-on, inquiry-based lab, high school and undergraduate students learn about nanotechnology by synthesizing their own nanoparticles in a single class period. This simple synthesis of zinc oxide nanorods and zinc hydroxy sulfate nanoplates can be done in 15 min using a household microwave oven. Reagent concentration, reaction…

InAs film grown on Si(111) by metal organic vapor phase epitaxy

International Nuclear Information System (INIS)

Caroff, P; Jeppsson, M; Mandl, B; Wernersson, L-E; Wheeler, D; Seabaugh, A; Keplinger, M; Stangl, J; Bauer, G

2008-01-01

We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 0 C for a thickness of 2 μm. We measured a high value of the electron mobility of 5100 cm 2 /Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization

Channeling study of laser-induced defect generation in InP and InAs

International Nuclear Information System (INIS)

Burdel', K.K.; Kashkarov, P.K.; Timoshenko, V.Yu.; Chechenin, N.G.

1992-01-01

Damage production in InP and InAs single crystals induced by a ruby-laser pulse irradiation with τ p =20 ms in the energy density region W=0.05-1.0 J/cm 2 is studied by the channeling and Rutherford backscattering techniques. The defect generation threshold was determined to be equal to 0.2 J/cm 2 and 0.55 J/cm 2 for InP and InAs crystals, respectively. Stoichiometric defects in InP crystals were observed at W>=0.5 J/cm 2 . The temperature fields in InP and InAs under laser irradiation were calculated. The experimental observations are considered as a result of a selective evaporation of the components from the melt

Solution-processed n-ZnO nanorod/p-Co_3O_4 nanoplate heterojunction light-emitting diode

International Nuclear Information System (INIS)

Kim, Jong-Woo; Lee, Su Jeong; Biswas, Pranab; Lee, Tae Il; Myoung, Jae-Min

2017-01-01

Highlights: • The n-ZnO nanorods were epitaxially grown on p-Co_3O_4 nanoplates. • The heteroepitaxial p-n junction was fabricated by using hydrothermal process. • The LEDs emitted reddish-orange and violet light related to ZnO point defects. • The Co_3O_4 nanoplates function as a hole injection layer. • Junction between 1D NRs and 2D NPs provides a new approach to design nanostructures. - Abstract: A heterojunction light-emitting diode (LED) based on p-type cobalt oxide (Co_3O_4) nanoplates (NPs)/n-type zinc oxide (ZnO) nanorods (NRs) is demonstrated. Using a low-temperature aqueous solution process, the n-type ZnO NRs were epitaxially grown on Co_3O_4 NPs which were two-dimensionally assembled by a modified Langmuir-Blodgett process. The heterojunction LEDs exhibited a typical rectifying behavior with a turn-on voltage of about 2 V and emitted not only reddish-orange light at 610 nm but also violet light at about 400 nm. From the comparative analyses of electroluminescence and photoluminescence, it was determined that the reddish-orange light emission was related to the electronic transitions from zinc interstitials (Zn_i) to oxygen interstitials (O_i) or conduction-band minimum (CBM) to oxygen vacancies (V_O), and the violet light emission was attribute to the transition from CBM to valence-band maximum (VBM) or Zn_i to zinc vacancies (V_Z_n).

Crystallographic Habit Tuning of Li2MnSiO4 Nanoplates for High-Capacity Lithium Battery Cathodes.

Science.gov (United States)

Ding, Zhengping; Feng, Yiming; Zhang, Datong; Ji, Ran; Chen, Libao; Ivey, Douglas G; Wei, Weifeng

2018-02-21

Li 2 MnSiO 4 has attracted significant attention as a cathode material for lithium ion batteries because of its high theoretical capacity (330 mA h g -1 with two Li + ions per formula unit), low cost, and environmentally friendly nature. However, its intrinsically poor Li diffusion, low electronic conductivity, and structural instability preclude its use in practical applications. Herein, elongated hexagonal prism-shaped Li 2 MnSiO 4 nanoplates with preferentially exposed {001} and {210} facets have been successfully synthesized via a solvothermal method. Density functional theory calculations and experimental characterization reveal that the formation mechanism involves the decomposition of solid precursors to nanosheets, self-assembly into nanoplates, and Ostwald ripening. Hydroxyl-containing solvents such as ethylene glycol and diethylene glycol play a crucial role as capping agents in tuning the preferential growth. Li 2 MnSiO 4 @C nanoplates demonstrate a near theoretical discharge capacity of 326.7 mA h g -1 at 0.05 C (1 C = 160 mA h g -1 ), superior rate capability, and good cycling stability. The enhanced electrochemical performance is ascribed to the electrochemically active {001} and {210} exposed facets, which provide short and fast Li + diffusion pathways along the [001] and [100] axes, a conformal carbon nanocoating, and a nanoscaled platelike structure, which offers a large electrode/electrolyte contact interface for Li + extraction/insertion processes.

Static stability analysis of smart magneto-electro-elastic heterogeneous nanoplates embedded in an elastic medium based on a four-variable refined plate theory

Science.gov (United States)

Ebrahimi, Farzad; Barati, Mohammad Reza

2016-10-01

In this article, a nonlocal four-variable refined plate theory is developed to examine the buckling behavior of nanoplates made of magneto-electro-elastic functionally graded (MEE-FG) materials resting on Winkler-Pasternak foundation. Material properties of nanoplate change in spatial coordinate based on power-law distribution. The nonlocal governing equations are deduced by employing the Hamilton principle. For various boundary conditions, the analytical solutions of nonlocal MEE-FG plates for buckling problem will be obtained based on an exact solution approach. Finally, dependency of buckling response of MEE-FG nanoplate on elastic foundation parameters, magnetic potential, external electric voltage, various boundary conditions, small scale parameter, power-law index, plate side-to-thickness ratio and aspect ratio will be figure out. These results can be advantageous for the mechanical analysis and design of intelligent nanoscale structures constructed from magneto-electro-thermo-elastic functionally graded materials.

Coherent quantum states of a relativistic particle in an electromagnetic plane wave and a parallel magnetic field

International Nuclear Information System (INIS)

Colavita, E.; Hacyan, S.

2014-01-01

We analyze the solutions of the Klein–Gordon and Dirac equations describing a charged particle in an electromagnetic plane wave combined with a magnetic field parallel to the direction of propagation of the wave. It is shown that the Klein–Gordon equation admits coherent states as solutions, while the corresponding solutions of the Dirac equation are superpositions of coherent and displaced-number states. Particular attention is paid to the resonant case in which the motion of the particle is unbounded. -- Highlights: •We study a relativistic electron in a particular electromagnetic field configuration. •New exact solutions of the Klein–Gordon and Dirac equations are obtained. •Coherent and displaced number states can describe a relativistic particle

InAs nanocrystals on SiO2/Si by molecular beam epitaxy for memory applications

International Nuclear Information System (INIS)

Hocevar, Moiera; Regreny, Philippe; Descamps, Armel; Albertini, David; Saint-Girons, Guillaume; Souifi, Abdelkader; Gendry, Michel; Patriarche, Gilles

2007-01-01

We studied a memory structure based on InAs nanocrystals grown by molecular beam epitaxy directly on thermal SiO 2 on silicon. Both nanocrystal diameter and density can be controlled by growth parameters. Transmission electron microscopy analysis shows high crystallinity and low size dispersion. In an electrical test structure with a 3.5 nm tunnel oxide, we observed that 80% of the initial injected electrons remain stored in the InAs nanocrystals after 3 months and that the retention time for electrons in InAs nanocrystals is four orders of magnitude higher than in silicon nanocrystals

[A cephalometric study on determining the orientation of occlusal plane].

Science.gov (United States)

Xie, J; Zhao, Y; Chao, Y; Luo, W

1993-12-01

A study of the parallel relationship between the occlusal plane and the line connecting nasal alar and tragus was made in 90 dentulous cases by using cephalometry. The results show that the line connecting the inferior point of nasal alar and the mid-point of tragus runs much more parallel with the occlusal plane. The regression equation reveals a "line of closest fitting". It was used in the prosthetic treatment for 50 edentulous patients with good clinical results. The line connecting the inferior point of nasal alar and the mid-point of tragus therefore represents a proper reference plane for determining occlusal plane and hence should be still a valuable index in clinical dentistry.

Reactive ion etching of GaSb, (Al,Ga)Sb, and InAs for novel device applications

International Nuclear Information System (INIS)

LaTulipe, D.C.; Frank, D.J.; Munekata, H.

1991-01-01

Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. The authors of this paper have studied the reactive ion etching characteristics of GaSb, (Al,Ga)Sb, and InAs in both methane/hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH 4 /H 2 , the etch rate of (Al,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200 Angstrom/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl 2 was found to yield anistropic profiles, with the etch rate of (Al,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to the InAs stop layer was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs- channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics

Direct Vapor Growth of Perovskite CsPbBr3 Nanoplate Electroluminescence Devices.

Science.gov (United States)

Hu, Xuelu; Zhou, Hong; Jiang, Zhenyu; Wang, Xiao; Yuan, Shuangping; Lan, Jianyue; Fu, Yongping; Zhang, Xuehong; Zheng, Weihao; Wang, Xiaoxia; Zhu, Xiaoli; Liao, Lei; Xu, Gengzhao; Jin, Song; Pan, Anlian

2017-10-24

Metal halide perovskite nanostructures hold great promises as nanoscale light sources for integrated photonics due to their excellent optoelectronic properties. However, it remains a great challenge to fabricate halide perovskite nanodevices using traditional lithographic methods because the halide perovskites can be dissolved in polar solvents that are required in the traditional device fabrication process. Herein, we report single CsPbBr 3 nanoplate electroluminescence (EL) devices fabricated by directly growing CsPbBr 3 nanoplates on prepatterned indium tin oxide (ITO) electrodes via a vapor-phase deposition. Bright EL occurs in the region near the negatively biased contact, with a turn-on voltage of ∼3 V, a narrow full width at half-maximum of 22 nm, and an external quantum efficiency of ∼0.2%. Moreover, through scanning photocurrent microscopy and surface electrostatic potential measurements, we found that the formation of ITO/p-type CsPbBr 3 Schottky barriers with highly efficient carrier injection is essential in realizing the EL. The formation of the ITO/p-type CsPbBr 3 Schottky diode is also confirmed by the corresponding transistor characteristics. The achievement of EL nanodevices enabled by directly grown perovskite nanostructures could find applications in on-chip integrated photonics circuits and systems.

Entropy generation due to external fluid flow and heat transfer from a cylinder between parallel planes

Directory of Open Access Journals (Sweden)

Melhem Omar A.

2017-01-01

Full Text Available In the present study, second law analysis is introduced for circular cylinder confined between parallel planes. An analytical approach is adopted to study the effects of block age, Reynolds and Prandtl numbers on the entropy generation due to the laminar flow and heat transfer. Four different fluids are considered in the present analysis for comparison purposes. Heat transfer for the cylinder at an isothermal boundary condition is incorporated. In general, the entropy generation rate decreases as the blockage ratio decreases. In addition, the entropy generation rate increases with increasing Reynolds and Prandtl numbers. At a fixed Reynolds number, the effect of block age becomes more notice able for higher Prandtl number fluid. Similarly, for the same fluid, the effect of block age becomes more no tice able as the Reynolds number increases.

Design, fabrication and structural optimization of tubular carbon/Kevlar®/PMMA/graphene nanoplate composite for bone fixation prosthesis.

Science.gov (United States)

Nasiri, F; Ajeli, S; Semnani, D; Jahanshahi, M; Emadi, R

2018-05-02

The present work investigates the mechanical properties of tubular carbon/Kevlar ® composite coated with poly(methyl methacrylate)/graphene nanoplates as used in the internal fixation of bones. Carbon fibers are good candidates for developing high-strength biomaterials and due to better stress transfer and electrical properties, they can enhance tissue formation. In order to improve carbon brittleness, ductile Kevlar ® was added to the composite. The tubular carbon/Kevlar ® composites have been prepared with tailorable braiding technology by changing the fiber pattern and angle in the composite structure and the number of composite layers. Fuzzy analyses are used for optimizing the tailorable parameters of 80 prepared samples and then mechanical properties of selected samples are discussed from the viewpoint of mechanical properties required for a bone fixation device. Experimental results showed that with optimizing braiding parameters the desired composite structure with mechanical properties close to bone properties could be produced. Results showed that carbon/Kevlar ® braid's physical properties, fiber composite distribution and diameter uniformity resulted in matrix uniformity, which enhanced strength and modulus due to better ability for distributing stress on the composite. Finally, as graphene nanoplates demonstrated their potential properties to improve wound healing intended for bone replacement, so reinforcing the PMMA matrix with graphene nanoplates enhanced the composite quality, for use as an implant.

Past and Present Development of INA's Liberalisation and Privatisation

International Nuclear Information System (INIS)

Lesic, A.; Stimac, B.

2001-01-01

The paper deals with the historical development aspects of the Croatian oil and gas industry INA. It describes the period from the very start of oil and gas production to the data of establishment of the Croatian state and afterwards. Some important milestones and political and economic events that impacted the development of the Croatian oil industry are described and commented, including changes toward liberalisation and privatisation of the oil and gas sector. The paper emphasises the role of INA in the Croatian economy and proposes some solutions for the liberalisation process and privatisation of the company that could prevent undesirable effects of privatisation and protect the interests of Croatia in the energy sector which is one of the main sectors of economy having influence on other production and service sectors and their competitiveness.(author)

Conductive atomic force microscopy study of InAs growth kinetics on vicinal GaAs (110)

International Nuclear Information System (INIS)

Tejedor, Paloma; Diez-Merino, Laura; Beinik, Igor; Teichert, Christian

2009-01-01

Conductive atomic force microscopy has been used to investigate the effect of atomic hydrogen and step orientation on the growth behavior of InAs on GaAs (110) misoriented substrates. Samples grown by conventional molecular beam epitaxy exhibit higher conductivity on [110]-multiatomic step edges, where preferential nucleation of InAs nanowires takes place by step decoration. On H-terminated substrates with triangular terraces bounded by [115]-type steps, three-dimensional InAs clusters grow selectively at the terrace apices as a result of a kinetically driven enhancement in upward mass transport via AsH x intermediate species and a reduction in the surface free energy.

The presence of INA proteins on the surface of single cells of Pseudomonas syringae R10.79 isolated from rain

Science.gov (United States)

Šantl-Temkiv, Tina; Ling, Meilee; Holm, Stine; Finster, Kai; Boesen, Thomas

2016-04-01

One of the important open questions in atmospheric ice nucleation is the impact of bioaerosols on the ice content of mix phase clouds (DeMott and Prenni 2010). Biogenic ice nuclei have a unique capacity of facilitating ice formation at temperatures between -1 and -10 °C. The model biogenic ice nuclei are produced by a few species of plant-surface bacteria, such as Pseudomonas syringae, that are commonly transported through the atmosphere. These bacterial species have highly specialized proteins, the so-called ice nucleation active (INA) proteins, which are exposed at the outer membrane surface of the cell where they promote ice particle formation. The mechanisms behind the onset of INA protein synthesis in single bacterial cells are not well understood. We performed a laboratory study in order to (i) investigate the presence of INA proteins on single bacterial cells and (ii) understand the conditions that induce INA protein production. We previously isolated an INA-positive strain of Pseudomonas syringae from rain samples collected in Denmark. Bacterial cells initiated ice nucleation activity at temperatures ≤-2°C and the cell fragments at temperatures ≤-8°C (Šantl-Temkiv et al 2015). We determined the amino-acid sequence of the INA protein and used the sequence to produce custom-made antibodies (GenScript, Germany). These antibodies were used to specifically stain and visualize the INA protein on the surfaces of single cells, which can then be quantified by a technique called flow cytometry. The synthesis of INA proteins by individual cells was followed during a batch growth experiment. An unusually high proportion of cells that were adapting to the new conditions prior to growth produced INA proteins (~4.4% of all cells). A smaller fraction of actively growing cells was carrying INA proteins (~1.2 % of all cells). The cells that stopped growing due to unfavorable conditions had the lowest fraction of cells carrying INA proteins (~0.5 % of all cells). To

Scattering by a plane-parallel layer with high concentration of optically soft particles

International Nuclear Information System (INIS)

Loiko, Valery A.; Berdnik, Vladimir V.

2009-01-01

A method describing light propagation in a plane-parallel light-scattering layer with large concentration of homogeneous particles is developed. It is based on the radiative transfer equation and the doubling method. The interference approximation is used to take into account collective scattering effects. Spectral dependence of transmitted light for a layer of nonabsorbing optically soft particles with subwavelength-sized particles is investigated. At small volume concentration of the particles the weak spectral dependences of wave exponents for coherently transmitted and diffuse light are observed. It is shown that in a layer with large volume concentration of the subwavelength-sized particles the wave exponent can exceed considerably the value of four, which takes place for the Rayleigh particles. The dependence of wave exponents for coherently transmitted and diffuse light on the refractive index and concentration of particles is investigated in detail. Multiple scattering of light results in the reduction of the exponent. The quantitative results are presented and discussed. It is shown that there is a range of wavelengths where the negative values of the wave exponent at the regime of multiple scattering are implemented.

Detection of hydrogen peroxide and glucose by using Tb2(MoO4)3 nanoplates as peroxidase mimics

Science.gov (United States)

Rahimi-Nasrabadi, Mehdi; Mizani, Farhang; Hosseini, Morteza; Keihan, Amir Homayoun; Ganjali, Mohammad Reza

2017-11-01

Tb2(MoO4)3 nanostructures are demonstrated for the first time to have an intrinsic peroxidase-like activity. Tb2(MoO4)3 nanoplates could efficiently catalyse the oxidation of 3,3‧,5,5‧-tetramethylbenzidine (TMB) to generate a blue dye (with an absorbance maximum at 652 nm) in the presence of H2O2. Based on the highly efficient catalytic of Tb2(MoO4)3 nanoplates, a novel system for optical determination of H2O2 and glucose was successfully established under optimized conditions. The assay had 0.0.08 μM and 0.1 μM detection limit for H2O2 and glucose, respectively. In our opinion, this enzyme mimetic has a potential to use in other oxidase based assays.

Free vibration analysis of a rotary smart two directional functionally graded piezoelectric material in axial symmetry circular nanoplate

Science.gov (United States)

Mahinzare, Mohammad; Ranjbarpur, Hosein; Ghadiri, Majid

2018-02-01

In this article, free vibration of a rotating circular nanoplate made of two directional functionally graded piezo materials (two directional FGPM) is modeled based on the first shear deformation theory (FSDT). Based on the power-law model, electro-elastic properties of two directional FGP rotating circular nanoplates are supposed to change continuously along the thickness and radius. Employing the modified couple stress theory, the small size effect of the equations of the plate is considered. The governing equations of the first shear deformation theory (FSDT) for the studied plate are obtained based on Hamilton's principle; these equations are solved using differential quadrature method (DQM). It is shown that the vibration behavior of the plate is significantly affected by angular velocity, external electric voltage, size dependency and power-law index (thickness and radial directions).

On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

International Nuclear Information System (INIS)

Grabowski, Jan

2010-01-01

Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-β2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In 2/3 Ga 1/3 As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating α2/α2-m configuration. In contrast to the previous surface reconstructions, where structural strain is

On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

Energy Technology Data Exchange (ETDEWEB)

Grabowski, Jan

2010-12-14

Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-{beta}2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In{sub 2/3}Ga{sub 1/3}As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating {alpha}2/{alpha}2-m configuration. In contrast to the previous surface reconstructions, where

Semipolar GaN grown on m-plane sapphire using MOVPE

Energy Technology Data Exchange (ETDEWEB)

Wernicke, Tim; Netzel, Carsten; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Institute of Solid State Physics, Technical University of Berlin (Germany)

2008-07-01

We have investigated the MOVPE growth of semipolar gallium nitride (GaN) films on (10 anti 1 0) m-plane sapphire substrates. Specular GaN films with a RMS roughness (10 x 10 {mu}m{sup 2}) of 15.2 nm were obtained and an arrowhead like structure aligned along[ anti 2 113] is prevailing. The orientation relationship was determined by XRD and yielded (212){sub GaN} parallel (10 anti 10){sub sapphire} and [anti 2113]{sub GaN} parallel [0001]{sub sapphire} as well as [anti 2113]{sub GaN} parallel [000 anti 1]{sub sapphire}. PL spectra exhibited near band edge emission accompanied by a strong basal plane stacking fault emission. In addition lower energy peaks attributed to prismatic plane stacking faults and donor acceptor pair emission appeared in the spectrum. With similar growth conditions also (1013) GaN films on m-plane sapphire were obtained. In the later case we found that the layer was twinned, crystallites with different c-axis orientation were present. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Alloy formation during InAs nanowire growth on GaAs(111)

Energy Technology Data Exchange (ETDEWEB)

Davydok, Anton; Saqib, Muhammad; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen (Germany); Rieger, Torsten; Grap, Thomas; Lepsa, Mihail [Peter Gruenberg Institut 9, Forschungszentrum Juelich (Germany); JARA - Fundamentals of Future Information Technology (Germany)

2012-07-01

The growth of semiconductor nanowires has attracted significant interest in recent years due to the possible fabrication of novel semiconductor devices for future electronic and opto-electronic applications. A possible way to obtain nanowires is the growth in molecular beam epitaxy on the (111)B oriented surface of the desired substrate, covered by a thin oxide layer. A crucial parameter in this method is the initial thickness of the oxide layer, often determined by an etching procedure. In this contribution, we report on the structural investigation of InAs nanowires grown on GaAs substrates covered by different oxide-layers using X-ray diffraction. In this contribution, we report on the structural investigation of InAs nanowires grown via an In droplet on GaAs substrates covered by different oxide layers using X-ray diffraction. Using a combination of symmetric and asymmetric X-ray diffraction, we observe that for growth on a defective oxide layer, alloy formation takes place and a large amount of InGaAs is formed, whereas for growth on an initially smooth oxide layer, only pure InAs is formed.

Quartic scaling MP2 for solids: A highly parallelized algorithm in the plane wave basis

Science.gov (United States)

Schäfer, Tobias; Ramberger, Benjamin; Kresse, Georg

2017-03-01

We present a low-complexity algorithm to calculate the correlation energy of periodic systems in second-order Møller-Plesset (MP2) perturbation theory. In contrast to previous approximation-free MP2 codes, our implementation possesses a quartic scaling, O ( N 4 ) , with respect to the system size N and offers an almost ideal parallelization efficiency. The general issue that the correlation energy converges slowly with the number of basis functions is eased by an internal basis set extrapolation. The key concept to reduce the scaling is to eliminate all summations over virtual orbitals which can be elegantly achieved in the Laplace transformed MP2 formulation using plane wave basis sets and fast Fourier transforms. Analogously, this approach could allow us to calculate second order screened exchange as well as particle-hole ladder diagrams with a similar low complexity. Hence, the presented method can be considered as a step towards systematically improved correlation energies.

A comparison of temporal, spatial and parallel phase shifting algorithms for digital image plane holography

International Nuclear Information System (INIS)

Arroyo, M P; Lobera, J

2008-01-01

This paper investigates the performance of several phase shifting (PS) techniques when using digital image plane holography (DIPH) as a fluid velocimetry technique. The main focus is on increasing the recording system aperture in order to overcome the limitation on the little light available in fluid applications. Some experiments with small rotations of a fluid-like solid object have been used to test the ability of PS-DIPH to faithfully reconstruct the object complex amplitude. Holograms for several apertures and for different defocusing distances have been recorded using spatial phase shifting (SPS) or temporal phase shifting (TPS) techniques. The parallel phase shifted holograms (H PPS ) have been generated from the TPS holograms (H TPS ). The data obtained from TPS-DIPH have been taken as the true object complex amplitude, which is used to benchmark that recovered using the other techniques. The findings of this work show that SPS and PPS are very similar indeed, and suggest that both can work for bigger apertures yet retain phase information

Structural and optical characterization and efficacy of hydrothermal synthesized Cu and Ag doped zinc oxide nanoplate bactericides

Energy Technology Data Exchange (ETDEWEB)

Abinaya, C.; Marikkannan, M.; Manikandan, M. [Department of Materials Science, School of Chemistry, Madurai Kamaraj University, Madurai, 625 021, Tamil Nadu (India); Mayandi, J., E-mail: jeyanthinath@yahoo.co.in [Department of Materials Science, School of Chemistry, Madurai Kamaraj University, Madurai, 625 021, Tamil Nadu (India); Department of Materials Science and Engineering, Michigan Technological University, Houghton, 49931 1295, MI (United States); Suresh, P.; Shanmugaiah, V. [Department of Microbial Technology, School of Biological Sciences, Madurai Kamaraj University, Madurai, 625 021, Tamil Nadu (India); Ekstrum, C. [Department of Materials Science and Engineering, Michigan Technological University, Houghton, 49931 1295, MI (United States); Pearce, J.M. [Department of Materials Science and Engineering, Michigan Technological University, Houghton, 49931 1295, MI (United States); Department of Electrical & Computer Engineering, Michigan Technological University, Houghton, 49931 1295, MI (United States)

2016-12-01

This study reports on a novel synthesis of pure zinc oxide and both Cu and Ag doped ZnO nanoplates using a simple and low-cost hydrothermal method. The structural and optical properties of the nanoplates were quantified and the materials were tested for antibacterial activity. X-ray diffraction revealed the formation of the wurtzite phase of ZnO and scanning and transmission electron microscopy showed the formation of randomly oriented ZnO nanoplates, having a thickness less than 80 nm and diameter less than 350 nm. The elemental analyses of both the pure and doped samples were evaluated by energy dispersive X-ray spectrometry. The FTIR spectra of ZnO nanomaterials showed the predictable bands at 3385 cm{sup −1} (O−H stretching), 1637 cm{sup −1} (stretching vibration of H{sub 2}O), 400 cm{sup −1}–570 cm{sup −1} (M−O stretching). The as synthesized samples showed a strong absorption peak in the UV region (∼376 nm) and a near band edge emission at 392 nm with some defect peaks in the visible region. From the XPS spectra the oxidation states of Zn, Cu and Ag were found to be +2, +2 and 0 respectively. Escherichia coli, Staphylococcus aureus and Salmonella typhi bacteria were used to evaluate the antibacterial activity of undoped and doped ZnO. Ag doped ZnO exhibited low minimum inhibitory concentration (MIC) values as 40 μg/ml for E. coli and S. aureus and 20 μg/ml for S. typhi, which are comparable to commercial antibiotics without optimization. Further, these chemically modified nanoparticles will be applicable in the development of medicine to control the spread and infection of a variety of bacterial strains. - Highlights: • Distinct ZnO nanoplates were successfully synthesized by facile hydrothermal method. • Cu and Ag doped ZnO exhibits significant destruction of bacteria with low MIC value. • Ag:ZnO has a noteworthy bactericidal effect against E. coli, S. aureus &S. typhi. • It projects that, a feasible low cost industrial process can

Sphere-shaped hierarchical cathode with enhanced growth of nanocrystal planes for high-rate and cycling-stable li-ion batteries.

Science.gov (United States)

Zhang, Linjing; Li, Ning; Wu, Borong; Xu, Hongliang; Wang, Lei; Yang, Xiao-Qing; Wu, Feng

2015-01-14

High-energy and high-power Li-ion batteries have been intensively pursued as power sources in electronic vehicles and renewable energy storage systems in smart grids. With this purpose, developing high-performance cathode materials is urgently needed. Here we report an easy and versatile strategy to fabricate high-rate and cycling-stable hierarchical sphered cathode Li(1.2)Ni(0.13)Mn(0.54)Co(0.13)O2, by using an ionic interfusion method. The sphere-shaped hierarchical cathode is assembled with primary nanoplates with enhanced growth of nanocrystal planes in favor of Li(+) intercalation/deintercalation, such as (010), (100), and (110) planes. This material with such unique structural features exhibits outstanding rate capability, cyclability, and high discharge capacities, achieving around 70% (175 mAh g(-1)) of the capacity at 0.1 C rate within about 2.1 min of ultrafast charging. Such cathode is feasible to construct high-energy and high-power Li-ion batteries.

Review of data and methods recommended in the international code of practice for dosimetry IAEA Technical Reports Series No. 381, The Use of Plane Parallel Ionization Chambers in High Energy Electron and Photon beams. Final report of the co-ordinated research project on dose determination with plane parallel ionization chambers in therapeutic electron and photon beams

International Nuclear Information System (INIS)

Dusautoy, A.; Roos, M.; Svensson, H.; Andreo, P.

2000-01-01

An IAEA Co-ordinated Research Project was designed to validate the data and procedures included in the International Code of Practice Technical Reports Series (TRS) No. 381, ''The Use of Plane Parallel Ionization Chambers in High Energy Electron and Photon Beams''. This work reviews and analyses the procedures used and the data obtained by the participants of the project. The analysis shows that applying TRS-381 generally produces reliable results. The determination of absorbed dose to water using the electron method in reference conditions is within the stated uncertainties (2.9%). Comparisons have shown TRS-381 is consistent with the AAPM TG-39 protocol within 1% for measurements made in water. Based on the analysis, recommendations are given with respect to: (i) the use of plane parallel ionization chambers of the Markus type, (ii) the values for the fluence correction factor for cylindrical chambers, (iii) the value of the wall correction factor for the Roos chamber in 60 Co beams, and (iv) the use of plastic phantoms and the values of the fluence correction factors. (author)

Thermo-magnetic field effects on the wave propagation behavior of smart magnetostrictive sandwich nanoplates

Science.gov (United States)

Ebrahimi, Farzad; Dabbagh, Ali

2018-03-01

In this paper, a three-variable plate model is utilized to explore the wave propagation problem of smart sandwich nanoplates made of a magnetostrictive core and ceramic face sheets while subjected to thermo-magnetic loading. Herein, the magnetostriction effect is considered and controlled via a feedback control system. The nanoplate is supposed to be embedded on a visco-Pasternak elastic substrate. The kinematic relations are derived based on the Kirchhoff plate theory; also, combining these obtained equations with Hamilton's principle, the local equations of motion are achieved. According to a nonlocal strain gradient theory (NSGT), the small-scale influences are covered precisely by introducing two scale coefficients. Afterwards, the nonlocal governing equations are derived coupling the local equations with those of the NSGT. Applying an analytical solution, the wave frequency and phase velocity of the propagated waves can be gathered solving an eigenvalue problem. On the other hand, accuracy and efficiency of the presented model are verified by setting a comparison between the obtained results with those of previous published researches. Effects of different variants are plotted in some figures and the highlights are discussed in detail.

Variable discrete ordinates method for radiation transfer in plane-parallel semi-transparent media with variable refractive index

Science.gov (United States)

Sarvari, S. M. Hosseini

2017-09-01

The traditional form of discrete ordinates method is applied to solve the radiative transfer equation in plane-parallel semi-transparent media with variable refractive index through using the variable discrete ordinate directions and the concept of refracted radiative intensity. The refractive index are taken as constant in each control volume, such that the direction cosines of radiative rays remain non-variant through each control volume, and then, the directions of discrete ordinates are changed locally by passing each control volume, according to the Snell's law of refraction. The results are compared by the previous studies in this field. Despite simplicity, the results show that the variable discrete ordinate method has a good accuracy in solving the radiative transfer equation in the semi-transparent media with arbitrary distribution of refractive index.

Competitive emissions of InAs (QDs)/GaInAsP/InP grown by GSMBE

Energy Technology Data Exchange (ETDEWEB)

Yuan, Xiaowen [Huazhong University of Science and Technology, Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Wuhan (China); Chinese Academy of Sciences, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Shanghai (China); Wang, Qi; Li, Senlin; Chen, C.Q. [Huazhong University of Science and Technology, Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Wuhan (China); Sun, Liaoxin; Luo, X.D.; Zhang, Bo [Chinese Academy of Sciences, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Shanghai (China)

2015-04-01

In this letter, the optical properties of InAs (QDs)/GaInAsP on InP substrate grown by gas source molecular beam epitaxy are investigated. By measuring and analyzing the photoluminescence spectra of InAs (QDs)/GaInAsP/InP at different temperatures and excitation powers, the origin of each emission is verified. And it is found that, with the temperature increasing, the emission intensity of GaInAsP wetting layers decreases firstly (T < 150 K) and then increases from 160 K to room temperature. By analyzing the experimental results of three samples with different QDs' sizes, a competitive emission between InAs QDs and GaInAsP wetting layers is confirmed. (orig.)

Elastic properties and electron transport in InAs nanowires

Energy Technology Data Exchange (ETDEWEB)

Migunov, Vadim

2013-02-22

The electron transport and elastic properties of InAs nanowires grown by chemical vapor deposition on InAs (001) substrate were studied experimentally, in-situ in a transmission electron microscope (TEM). A TEM holder allowing the measurement of a nanoforce while simultaneous imaging nanowire bending was used. Diffraction images from local areas of the wire were recorded to correlate elastic properties with the atomic structure of the nanowires. Another TEM holder allowing the application of electrical bias between the nanowire and an apex of a metallic needle while simultaneous imaging the nanowire in TEM or performing electron holography was used to detect mechanical vibrations in mechanical study or holographical observation of the nanowire inner potential in the electron transport studies. The combination of the scanning probe methods with TEM allows to correlate the measured electric and elastic properties of the nanowires with direct identification of their atomic structure. It was found that the nanowires have different atomic structures and different stacking fault defect densities that impacts critically on the elastic properties and electric transport. The unique methods, that were applied in this work, allowed to obtain dependencies of resistivity and Young's modulus of left angle 111 right angle -oriented InAs nanowires on defect density and diameter. It was found that the higher is the defect density the higher are the resistivity and the Young's modulus. Regarding the resistivity, it was deduced that the stacking faults increase the scattering of the electrons in the nanowire. These findings are consistent with the literature, however, the effect described by the other groups is not so pronounced. This difference can be attributed to the significant incompleteness of the physical models used for the data analysis. Regarding the elastic modulus, there are several mechanisms affecting the elasticity of the nanowires discussed in the thesis. It

Etching and oxidation of InAs in planar inductively coupled plasma

Energy Technology Data Exchange (ETDEWEB)

Dultsev, F.N., E-mail: fdultsev@thermo.isp.nsc.ru [Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, Novosibirsk 630090 (Russian Federation)

2009-10-15

The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH{sub 4}/H{sub 2}/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

Etching and oxidation of InAs in planar inductively coupled plasma

Science.gov (United States)

Dultsev, F. N.; Kesler, V. G.

2009-10-01

The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4/H 2/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

Etching and oxidation of InAs in planar inductively coupled plasma

International Nuclear Information System (INIS)

Dultsev, F.N.; Kesler, V.G.

2009-01-01

The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4 /H 2 /Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

Geometric factors in the magnetoresistance of n-doped InAs epilayers

KAUST Repository

Sun, Jian

2013-11-27

We investigate the magnetoresistance (MR) effect in n-doped InAs and InAs/metal hybrid devices with geometries tailored to elucidate the physical mechanism and the role of geometry in the MR. Despite the isotropic Fermi surface in InAs, we observe a strong intrinsic MR in the InAs epilayer due to the existence of a surface conducting layer. Experimental comparison confirms that the extraordinary MR in the InAs/metal hybrids outperforms the orbital MR in the Corbino disk in terms of both the MR ratio and the magnetic field resolution. The results also indicate the advantage of a two-contact configuration in the hybrid devices over a four-contact one with respect to the magnetic field resolution. This is in contrast to previously reported results, where performance was evaluated in terms of the MR ratio and a four-contact configuration was found to be optimal. By applying Kohler\\'s rule, we find that at temperatures above 75 K the extraordinary MR violates Kohler\\'s rule, due to multiple relaxation rates, whereas the orbital MR obeys it. This finding can be used to distinguish the two geometric effects, the extraordinary MR and the orbital MR, from each other.

Critical surface phase of α2(2 × 4) reconstructed zig-zag chains on InAs(001)

Energy Technology Data Exchange (ETDEWEB)

Guo, Xiang [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China); Zhou, Xun [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China); School of Physics and Electronics Science, Guizhou Normal University, Guizhou, Guiyang 550001 (China); Wang, Ji-Hong [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China); Luo, Zi-Jiang [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China); School of Education Administration, Guizhou University of Finance and Economics, Guizhou, Guiyang 550004 (China); Zhou, Qing; Liu, Ke; Hu, Ming-Zhe [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China); Ding, Zhao, E-mail: zding@gzu.edu.cn [Department of Electronic Information Science and Technology, Guizhou University, Guizhou, Guiyang 550025 (China)

2014-07-01

The critical condition for InAs(001) surface phase transition has been studied, the surface phase transition of InAs(001) showed discontinuity with hysteresis cycle as a function of substrate temperature. A mixed reconstruction surface and zig-zag chain α2(2 × 4) reconstruction surface have been observed by scanning tunneling microscopy. Considering the interaction and dynamics of surface arsenic atoms, the zig-zag chains of α2(2 × 4) reconstruction were found to be actually caused by the selective adsorption and desorption of surface arsenic dimers, they played a critical role in the surface phase transition between (2 × 4) and (4 × 2). - Highlights: • Discontinuous surface phase transition phenomena on the flat InAs(001) surface • Nanoscale InAs(001) surface observed by scanning tunneling microscopy • “Zig-Zag” chains of α2(2 × 4) reconstruction • Critical role in the surface phase transition between (2 × 4) and (4 × 2)

Critical surface phase of α2(2 × 4) reconstructed zig-zag chains on InAs(001)

International Nuclear Information System (INIS)

Guo, Xiang; Zhou, Xun; Wang, Ji-Hong; Luo, Zi-Jiang; Zhou, Qing; Liu, Ke; Hu, Ming-Zhe; Ding, Zhao

2014-01-01

The critical condition for InAs(001) surface phase transition has been studied, the surface phase transition of InAs(001) showed discontinuity with hysteresis cycle as a function of substrate temperature. A mixed reconstruction surface and zig-zag chain α2(2 × 4) reconstruction surface have been observed by scanning tunneling microscopy. Considering the interaction and dynamics of surface arsenic atoms, the zig-zag chains of α2(2 × 4) reconstruction were found to be actually caused by the selective adsorption and desorption of surface arsenic dimers, they played a critical role in the surface phase transition between (2 × 4) and (4 × 2). - Highlights: • Discontinuous surface phase transition phenomena on the flat InAs(001) surface • Nanoscale InAs(001) surface observed by scanning tunneling microscopy • “Zig-Zag” chains of α2(2 × 4) reconstruction • Critical role in the surface phase transition between (2 × 4) and (4 × 2)

Pathogenic and Ice-Nucleation Active (INA) Bacteria causing Dieback of Willows in Short Rotation Forestry

Energy Technology Data Exchange (ETDEWEB)

Nejad, Pajand

2005-03-01

To find out whether bacteria isolated from diseased plant parts can be the main causal agent for the dieback appearing in Salix energy forestry plantations in Sweden during the last few years, and if the joint effects of bacteria and frost injury are synergistic, extensive sampling of shoots from diseased Salix plants was performed. We performed several laboratory and greenhouse investigations and used evaluation techniques on the functions of the Ice-Nucleation Active (INA) bacteria. We carried out a comparison between spring and autumn bacterial communities isolated from within (endophytically) and surface (epiphytically) plant tissues of Salix viminalis. Seasonal variation of bacteria in willow clones with different levels of frost sensitivity and symptoms of bacterial damage was also investigated. We further focussed on possible effect of fertilisation and nutrient availability on the bacterial community in relation to plant dieback in Estonian willow plantations. The identification and detection of INA bacteria which cause damage in combination with frost to willow (Salix spp) plants in late fall, winter and spring was performed using BIOLOG MicroPlate, biochemical tests, selective INA primers and 16S rDNA analysis. To distinguish the character for differentiation between these bacteria morphologically and with respect to growing ability different culture media were used. We studied the temperature, at which ice nucleation occurred for individual bacteria, estimated the population of INA bacteria, effect of growth limiting factors, and evaluated the effect of chemical and physical agents for disruption and possible inhibition of INA among individual bacterial strains. The concentration of carbon, nitrogen and phosphorus on INA is discussed. We demonstrate that among the bacterial isolates recovered from the willow plantations, there were many that were capable of ice nucleation at temperatures between -2 and -10 deg C, many that were capable of inducing a

Coherent field propagation between tilted planes.

Science.gov (United States)

Stock, Johannes; Worku, Norman Girma; Gross, Herbert

2017-10-01

Propagating electromagnetic light fields between nonparallel planes is of special importance, e.g., within the design of novel computer-generated holograms or the simulation of optical systems. In contrast to the extensively discussed evaluation between parallel planes, the diffraction-based propagation of light onto a tilted plane is more burdensome, since discrete fast Fourier transforms cannot be applied directly. In this work, we propose a quasi-fast algorithm (O(N 3  log N)) that deals with this problem. Based on a proper decomposition into three rotations, the vectorial field distribution is calculated on a tilted plane using the spectrum of plane waves. The algorithm works on equidistant grids, so neither nonuniform Fourier transforms nor an explicit complex interpolation is necessary. The proposed algorithm is discussed in detail and applied to several examples of practical interest.

Electronic Structures of Strained InAs x P1-x by Density Functional Theory.

Science.gov (United States)

Lee, Seung Mi; Kim, Min-Young; Kim, Young Heon

2018-09-01

We investigated the effects of strain on the electronic structures of InAsxP1-x using quantum mechanical density functional theory calculations. The electronic band gap and electron effective mass decreased with the increase of the uniaxial tensile strain along the [0001] direction of wurtzite InAs0.75P0.25. Therefore, faster electron movements are expected. These theoretical results are in good agreement with the experimental measurements of InAs0.75P0.25 nanowire.

InAs migration on released, wrinkled InGaAs membranes used as virtual substrate

International Nuclear Information System (INIS)

Filipe Covre da Silva, S; Lanzoni, E M; De Araujo Barboza, V; Deneke, Ch; Malachias, A; Kiravittaya, S

2014-01-01

Partly released, relaxed and wrinkled InGaAs membranes are used as virtual substrates for overgrowth with InAs. Such samples exhibit different lattice parameters for the unreleased epitaxial parts, the released flat, back-bond areas and the released wrinkled areas. A large InAs migration towards the released membrane is observed with a material accumulation on top of the freestanding wrinkles during overgrowth. A semi-quantitative analysis of the misfit strain shows that the material migrates to the areas of the sample with the lowest misfit strain, which we consider as the areas of the lowest chemical potential of the surface. Material migration is also observed for the edge-supported, freestanding InGaAs membranes found on these samples. Our results show that the released, wrinkled nanomembranes offer a growth template for InAs deposition that fundamentally changes the migration behavior of the deposited material on the growth surface. (paper)

Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

International Nuclear Information System (INIS)

Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

2013-01-01

Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180°C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400–760°C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600°C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures

Single-photon generation with InAs quantum dots

International Nuclear Information System (INIS)

Santori, Charles; Fattal, David; Vuckovic, Jelena; Solomon, Glenn S; Yamamoto, Yoshihisa

2004-01-01

Single-photon generation using InAs quantum dots in pillar microcavities is described. The effects on performance of the excitation wavelength and polarization, and the collection bandwidth and polarization, are studied in detail. The efficiency and photon state purity of these devices have been measured, and issues affecting these parameters are discussed. Prospects for improved devices are also discussed

Correlation between the Montreal Cognitive Assessment-Indonesian Version (Moca-INA) and the Mini-Mental State Examination (MMSE) in Elderly.

Science.gov (United States)

Rambe, Aldy Safruddin; Fitri, Fasihah Irfani

2017-12-15

As the rapid growth of the elderly population and the increased prevalence of Alezheimer's Disease and related disorders, there is an increasing need for effective cognitive screening. The Mini Mental State Examination (MMSE) is the most frequently used screening test of cognitive impairment because of its convenience. The Montreal Cognitive Assessment-Indonesian Version (MoCA-INA) has been validated and recently been used as a cognitive screening tool. The aim of this study was to compare the MMSE and MoCA-INA scores and to determine the correlation between the MMSE and MoCA-INA scores in elderly. This was a cross-sectional study including 83 elderly subjects from November 2016 until June 2017. We performed MMSE and MoCA-INA for assessment of cognitive function and the time between each test was at least 30 minutes. The study included 83 subjects which were consisted of 46 (55.4%) males and 37 (44.6%) females. The mean age was 69.19 ± 4.23 ranging from 65 to 79 years old. The average MMSE scores was 24.96 ± 3.38 (range 14 to 30). The average MoCA-INA scores was 21.06 ± 4.56 (range 5 to 30). The Pearson correlation coefficient between the scores was 0.71 (p<0.005). There were no significant differences of both scores based on history of hypertension, diabetes mellitus and previous stroke, but there was a significant difference in MMSE scores based on level of education. The MoCA-INA score showed a good correlation with the MMSE score. Both tests showed comparable results but MoCA-INA showed lower average with wider range of scores.

Surface Preparation of InAs (110 Using Atomic Hydrogen

Directory of Open Access Journals (Sweden)

T.D. Veal

2002-06-01

Full Text Available Atomic hydrogen cleaning has been used to produce structurally and electronically damage-free InAs(110 surfaces.  X-ray photoelectron spectroscopy (XPS was used to obtain chemical composition and chemical state information about the surface, before and after the removal of the atmospheric contamination. Low energy electron diffraction (LEED and high-resolution electron-energy-loss spectroscopy (HREELS were also used, respectively, to determine the surface reconstruction and degree of surface ordering, and to probe the adsorbed contaminant vibrational modes and the collective excitations of the clean surface. Clean, ordered and stoichiometric  InAs(110-(1×1 surfaces were obtained by exposure to thermally generated atomic hydrogen at a substrate temperature as low as 400ºC.  Semi-classical dielectric theory analysis of HREEL spectra of the phonon and plasmon excitations of the clean surface indicate that no electronic damage or dopant passivation were induced by the surface preparation method.

Solution-processed n-ZnO nanorod/p-Co{sub 3}O{sub 4} nanoplate heterojunction light-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Kim, Jong-Woo; Lee, Su Jeong; Biswas, Pranab [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722 (Korea, Republic of); Lee, Tae Il [Department of BioNano Technology, Gachon University, 1342 Seongnam Daero, Seongnam 13120 (Korea, Republic of); Myoung, Jae-Min, E-mail: jmmyoung@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722 (Korea, Republic of)

2017-06-01

Highlights: • The n-ZnO nanorods were epitaxially grown on p-Co{sub 3}O{sub 4} nanoplates. • The heteroepitaxial p-n junction was fabricated by using hydrothermal process. • The LEDs emitted reddish-orange and violet light related to ZnO point defects. • The Co{sub 3}O{sub 4} nanoplates function as a hole injection layer. • Junction between 1D NRs and 2D NPs provides a new approach to design nanostructures. - Abstract: A heterojunction light-emitting diode (LED) based on p-type cobalt oxide (Co{sub 3}O{sub 4}) nanoplates (NPs)/n-type zinc oxide (ZnO) nanorods (NRs) is demonstrated. Using a low-temperature aqueous solution process, the n-type ZnO NRs were epitaxially grown on Co{sub 3}O{sub 4} NPs which were two-dimensionally assembled by a modified Langmuir-Blodgett process. The heterojunction LEDs exhibited a typical rectifying behavior with a turn-on voltage of about 2 V and emitted not only reddish-orange light at 610 nm but also violet light at about 400 nm. From the comparative analyses of electroluminescence and photoluminescence, it was determined that the reddish-orange light emission was related to the electronic transitions from zinc interstitials (Zn{sub i}) to oxygen interstitials (O{sub i}) or conduction-band minimum (CBM) to oxygen vacancies (V{sub O}), and the violet light emission was attribute to the transition from CBM to valence-band maximum (VBM) or Zn{sub i} to zinc vacancies (V{sub Zn}).

In situ catalytic synthesis of high-graphitized carbon-coated LiFePO4 nanoplates for superior Li-ion battery cathodes.

Science.gov (United States)

Ma, Zhipeng; Fan, Yuqian; Shao, Guangjie; Wang, Guiling; Song, Jianjun; Liu, Tingting

2015-02-04

The low electronic conductivity and one-dimensional diffusion channel along the b axis for Li ions are two major obstacles to achieving high power density of LiFePO4 material. Coating carbon with excellent conductivity on the tailored LiFePO4 nanoparticles therefore plays an important role for efficient charge and mass transport within this material. We report here the in situ catalytic synthesis of high-graphitized carbon-coated LiFePO4 nanoplates with highly oriented (010) facets by introducing ferrocene as a catalyst during thermal treatment. The as-obtained material exhibits superior performances for Li-ion batteries at high rate (100 C) and low temperature (-20 °C), mainly because of fast electron transport through the graphitic carbon layer and efficient Li(+)-ion diffusion through the thin nanoplates.

Modelling radiative transfer through ponded first-year Arctic sea ice with a plane-parallel model

Directory of Open Access Journals (Sweden)

T. Taskjelle

2017-09-01

Full Text Available Under-ice irradiance measurements were done on ponded first-year pack ice along three transects during the ICE12 expedition north of Svalbard. Bulk transmittances (400–900 nm were found to be on average 0.15–0.20 under bare ice, and 0.39–0.46 under ponded ice. Radiative transfer modelling was done with a plane-parallel model. While simulated transmittances deviate significantly from measured transmittances close to the edge of ponds, spatially averaged bulk transmittances agree well. That is, transect-average bulk transmittances, calculated using typical simulated transmittances for ponded and bare ice weighted by the fractional coverage of the two surface types, are in good agreement with the measured values. Radiative heating rates calculated from model output indicates that about 20 % of the incident solar energy is absorbed in bare ice, and 50 % in ponded ice (35 % in pond itself, 15 % in the underlying ice. This large difference is due to the highly scattering surface scattering layer (SSL increasing the albedo of the bare ice.

Modelling radiative transfer through ponded first-year Arctic sea ice with a plane-parallel model

Science.gov (United States)

Taskjelle, Torbjørn; Hudson, Stephen R.; Granskog, Mats A.; Hamre, Børge

2017-09-01

Under-ice irradiance measurements were done on ponded first-year pack ice along three transects during the ICE12 expedition north of Svalbard. Bulk transmittances (400-900 nm) were found to be on average 0.15-0.20 under bare ice, and 0.39-0.46 under ponded ice. Radiative transfer modelling was done with a plane-parallel model. While simulated transmittances deviate significantly from measured transmittances close to the edge of ponds, spatially averaged bulk transmittances agree well. That is, transect-average bulk transmittances, calculated using typical simulated transmittances for ponded and bare ice weighted by the fractional coverage of the two surface types, are in good agreement with the measured values. Radiative heating rates calculated from model output indicates that about 20 % of the incident solar energy is absorbed in bare ice, and 50 % in ponded ice (35 % in pond itself, 15 % in the underlying ice). This large difference is due to the highly scattering surface scattering layer (SSL) increasing the albedo of the bare ice.

CuCo2O4 nanoplate film as a low-cost, highly active and durable catalyst towards the hydrolytic dehydrogenation of ammonia borane for hydrogen production

Science.gov (United States)

Liu, Quanbing; Zhang, Shengjie; Liao, Jinyun; Feng, Kejun; Zheng, Yuying; Pollet, Bruno G.; Li, Hao

2017-07-01

Catalytic dehydrogenation of ammonia borane is one of the most promising routes for the production of clean hydrogen as it is seen as a highly efficient and safe method. However, its large-scale industrial application is either limited by the high cost of the catalyst (usually a noble metal based catalyst) or by the low activity and poor reusability (usually a non-noble metal catalyst). In this study, we have successfully prepared three low-cost CuCo2O4 nanocatalysts, namely: (i) Ti supported CuCo2O4 film made of CuCo2O4 nanoplates, (ii) Ti supported CuCo2O4 film made of CuCo2O4 nanosheets, and (iii) unsupported CuCo2O4 nanoparticles. Among the three catalysts used for the hydrolytic dehydrogeneration of ammonia borane, the CuCo2O4 nanoplate film exhibits the highest catalytic activity with a turnover frequency (TOF) of ∼44.0 molhydrogen min-1 molcat-1. This is one of the largest TOF value for noble-metal-free catalysts ever reported in the literature. Moreover, the CuCo2O4 nanoplate film almost keeps its original catalytic activity after eight cycles, indicative of its high stability and good reusability. Owing to its advantages, the CuCo2O4 nanoplate film can be a promising catalyst for the hydrolytic dehydrogenation of ammonia borane, which may find important applications in the field of hydrogen energy.

Aqueous supercapacitors of high energy density based on MoO3 nanoplates as anode material.

Science.gov (United States)

Tang, Wei; Liu, Lili; Tian, Shu; Li, Lei; Yue, Yunbo; Wu, Yuping; Zhu, Kai

2011-09-28

MoO(3) nanoplates were prepared as anode material for aqueous supercapacitors. They can deliver a high energy density of 45 W h kg(-1) at 450 W kg(-1) and even maintain 29 W h kg(-1) at 2 kW kg(-1) in 0.5 M Li(2)SO(4) aqueous electrolyte. These results present a new direction to explore non-carbon anode materials.

Mapping robust parallel multigrid algorithms to scalable memory architectures

Science.gov (United States)

Overman, Andrea; Vanrosendale, John

1993-01-01

The convergence rate of standard multigrid algorithms degenerates on problems with stretched grids or anisotropic operators. The usual cure for this is the use of line or plane relaxation. However, multigrid algorithms based on line and plane relaxation have limited and awkward parallelism and are quite difficult to map effectively to highly parallel architectures. Newer multigrid algorithms that overcome anisotropy through the use of multiple coarse grids rather than relaxation are better suited to massively parallel architectures because they require only simple point-relaxation smoothers. In this paper, we look at the parallel implementation of a V-cycle multiple semicoarsened grid (MSG) algorithm on distributed-memory architectures such as the Intel iPSC/860 and Paragon computers. The MSG algorithms provide two levels of parallelism: parallelism within the relaxation or interpolation on each grid and across the grids on each multigrid level. Both levels of parallelism must be exploited to map these algorithms effectively to parallel architectures. This paper describes a mapping of an MSG algorithm to distributed-memory architectures that demonstrates how both levels of parallelism can be exploited. The result is a robust and effective multigrid algorithm for distributed-memory machines.

Fe-contacts on InAs(100) and InP(100) characterised by conversion electron Mössbauer spectroscopy

DEFF Research Database (Denmark)

Damsgaard, Christian Danvad; Gunnlaugsson, H.P; Weyer, G.

2005-01-01

We have grown 4 nm thin films of Fe-57 on InAs(100) and InP(100) surfaces by use of MBE and studied the samples by Fe-57 conversion electron Mossbauer spectroscopy. In the case of InAs, the Mossbauer spectrum showed a sextet due to alpha-Fe and a further magnetically split component with slightly...

Homoclinic behaviors and chaotic motions of double layered viscoelastic nanoplates based on nonlocal theory and extended Melnikov method

Energy Technology Data Exchange (ETDEWEB)

Wang, Yu; Wang, Yi-Ze [School of Astronautics, Harbin Institute of Technology, P. O. Box 137, Harbin 150001 (China); Li, Feng-Ming, E-mail: fmli@bjut.edu.cn [School of Astronautics, Harbin Institute of Technology, P. O. Box 137, Harbin 150001 (China); College of Mechanical Engineering, Beijing University of Technology, Beijing 100124 (China)

2015-06-15

The nonlinear dynamical equations are established for the double layered viscoelastic nanoplates (DLNP) subjected to in-plane excitation based on the nonlocal theory and von Kármán large deformation theory. The extended high dimensional homoclinic Melnikov method is employed to study the homoclinic phenomena and chaotic motions for the parametrically excited DLNP system. The criteria for the homoclinic transverse intersection for both the asynchronous and synchronous buckling cases are proposed. Lyapunov exponents and phase portraits are obtained to verify the Melnikov-type analysis. The influences of structural parameters on the transverse homoclinic orbits and homoclinic bifurcation sets are discussed for the two buckling cases. Some novel phenomena are observed in the investigation. It should be noticed that the nonlocal effect on the homoclinic behaviors and chaotic motions is quite remarkable. Hence, the small scale effect should be taken into account for homoclinic and chaotic analysis for nanostructures. It is significant that the nonlocal effect on the homoclinic phenomena for the asynchronous buckling case is quite different from that for the synchronous buckling case. Moreover, due to the van der Walls interaction between the layers, the nonlocal effect on the homoclinic behaviors and chaotic motions for high order mode is rather tiny under the asynchronous buckling condition.

Homoclinic behaviors and chaotic motions of double layered viscoelastic nanoplates based on nonlocal theory and extended Melnikov method.

Science.gov (United States)

Wang, Yu; Li, Feng-Ming; Wang, Yi-Ze

2015-06-01

The nonlinear dynamical equations are established for the double layered viscoelastic nanoplates (DLNP) subjected to in-plane excitation based on the nonlocal theory and von Kármán large deformation theory. The extended high dimensional homoclinic Melnikov method is employed to study the homoclinic phenomena and chaotic motions for the parametrically excited DLNP system. The criteria for the homoclinic transverse intersection for both the asynchronous and synchronous buckling cases are proposed. Lyapunov exponents and phase portraits are obtained to verify the Melnikov-type analysis. The influences of structural parameters on the transverse homoclinic orbits and homoclinic bifurcation sets are discussed for the two buckling cases. Some novel phenomena are observed in the investigation. It should be noticed that the nonlocal effect on the homoclinic behaviors and chaotic motions is quite remarkable. Hence, the small scale effect should be taken into account for homoclinic and chaotic analysis for nanostructures. It is significant that the nonlocal effect on the homoclinic phenomena for the asynchronous buckling case is quite different from that for the synchronous buckling case. Moreover, due to the van der Walls interaction between the layers, the nonlocal effect on the homoclinic behaviors and chaotic motions for high order mode is rather tiny under the asynchronous buckling condition.

On the processing of InAs and InSb photodiode applications

Energy Technology Data Exchange (ETDEWEB)

Odendaal, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Auret, F.D. [Department of Physics, University of Pretoria, Lynnwood road, Hillcrest, Pretoria 0002 (South Africa)

2008-07-01

In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na{sub 2}S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

On the processing of InAs and InSb photodiode applications

International Nuclear Information System (INIS)

Odendaal, V.; Botha, J.R.; Auret, F.D.

2008-01-01

In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na 2 S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

METHOD FOR DETERMINATION OF FOCAL PLANE LOCATION OF FOCUSING COMPONENTS

Directory of Open Access Journals (Sweden)

A. I. Ivashko

2017-01-01

Full Text Available Mass-production of different laser systems often requires utilization of the focal spot size method for determination of output laser beam spatial characteristics. The main challenge of this method is high accuracy maintenance of a CCD camera beam profiler in the collecting lens focal plane. The aim of our work is development of new method for placing of photodetector array in the collecting lens focal plane with high accuracy.Proposed technique is based on focusing of several parallel laser beams. Determination of the focal plane position requires only longitudinal translation of the CCD-camera to find a point of laser beams intersection. Continuous-wave (CW diode-pumped laser emitting in the spectral region near 1μm was created to satisfy the requirements of the developed technique. Designed microchip laser generates two stigmatic Gaussian beams with automatically parallel beam axes due to independent pumping of different areas of the one microchip crystal having the same cavity mirrors.It was theoretically demonstrated that developed method provides possibility of the lenses focal plane determination with 1 % accuracy. The microchip laser generates two parallel Gaussian beams with divergence of about 10 mrad. Laser output power can be varied in the range of 0.1–1.5 W by changing the pumping laser diode electrical current. The distance between two beam axes can be changed in the range of 0.5–5.0 mm.We have proposed method for determination of positive lens focal plane location by using of CCDcamera and two laser beams with parallel axes without utilization of additional optical devices. We have developed CW longitudinally diode pumped microchip laser emitting in the 1-μm spectral region that can be used in the measuring instrument that doesn’t require precision mechanical components for determination of focal plane location with 1 % accuracy. The overall dimensions of laser head was 70 × 40 × 40 mm3 and maximum power consumption was

Controllable synthesis of Bi{sub 2}WO{sub 6} nanoplate self-assembled hierarchical erythrocyte microspheres via a one-pot hydrothermal reaction with enhanced visible light photocatalytic activity

Energy Technology Data Exchange (ETDEWEB)

Yang, Zhenya; Huang, Lin; Xie, Yanyu; Lin, Zheguan; Fan, Yunyan; Liu, Dan; Chen, Lu; Zhang, Zizhong, E-mail: z.zhang@fzu.edu.cn; Wang, Xuxu

2017-05-01

Highlights: • Bi{sub 2}WO{sub 6} hierarchical erythrocyte structure was designed by F{sup −}-assisted one-pot reaction. • Erythrocyte structure enhanced the visible-light photocatalytic activity of Bi{sub 2}WO{sub 6}. • Superoxide radical anions and h{sup +} were the main active species for RhB degradation. - Abstract: This work provides a simple approach of the F{sup −}-assisted one-pot hydrothermal reaction to successfully synthesize Bi{sub 2}WO{sub 6} hierarchical erythrocyte microspheres. The importance role of F{sup −} was systematically investigated by comparing different type of halogen ions, hydrothermal temperature and time. The possible growth mechanism of Bi{sub 2}WO{sub 6} hierarchical structures was proposed. The hierarchical erythrocytes were formed through the well-ordered and oriented self-assembly of thin Bi{sub 2}WO{sub 6} nanoplate primary subunits. F{sup −} ions were absorbed on Bi{sub 2}WO{sub 6} nanoplate surface to suppress the nanoplate stack but to induce a self-assembly through the edge interaction of Bi{sub 2}WO{sub 6} nanoplates into erythrocyte-like hierarchical microspheres superstructures. This erythrocyte structure narrowed the band gap energy and enhanced the visible-light photocatalytic activity of Bi{sub 2}WO{sub 6}. Moreover, superoxide radical anions and h{sup +} were revealed as the main active species responding for the RhB degradation on Bi{sub 2}WO{sub 6} under visible light irradiation.

Phase-conjugate interferometer to estimate refractive index and thickness of transparent plane parallel plates

Energy Technology Data Exchange (ETDEWEB)

Pastrana-Sanchez, R.; Rodriguez-Zurita, G.; Vazquez-Castillo, J. F. [Benemerita Universidad Autonoma de Puebla, Puebla (Mexico)

2001-04-01

A technique to estimate the refractive index and thickness of homogeneous plane parallel dielectric plates is proposed using a phase-conjugate interferometer, in which counting of interference fringes is employed. The light beam impinges a tilted plate before it enters a phase-conjugate interferometer, and a count of the fringes passing through a given reference at the observing plane gives the phase changes as a function of tilting angle. The obtained data is fitted to a mathematical model, which leads to the determination of both refractive index and thickness simultaneously. In this letter, experimental data from two interferometers are also discussed for comparison. One with an externally-pumped phase-conjugate mirror achieved with a BSO photorefractive crystal and another one with conventional mirrors. Results show that the phase sensitivity of the phase-conjugate interferometer is not simply twice the corresponding sensitivity of the conventional version. [Spanish] Se propone una tecnica para medir indices de refraccion y espesores de placas dielectricas plano paralelas homogeneas empleando un interferometro con fase conjugada, en el cual se usa el conteo de franjas. El haz luminoso incide en una placa inclinada bajo inspeccion antes de entrar en un interferometro equipado con un espejo conjugador de fase, y se realiza un conteo de las franjas que pasan por determinada referencia en el plano de observacion, proporcionando los cambios de fase en funcion del angulo de inclinacion. Los datos obtenidos se ajustan a un modelo, el cual conduce a la determinacion, tanto del indice de refraccion como del espesor, simultaneamente. En este trabajo se discuten datos experimentales provenientes de dos interferometros para su comparacion. Uno de ellos tiene un espejo conjugador basado en un cristal BSO fotorrefractivo, mientras que el otro es una variante con espejos convencionales. Se muestra que la sensibilidad de fase del interferometro con conjugador de fase no

Ultrathin Layered SnSe Nanoplates for Low Voltage, High-Rate, and Long-Life Alkali-Ion Batteries.

Science.gov (United States)

Wang, Wei; Li, Peihao; Zheng, Henry; Liu, Qiao; Lv, Fan; Wu, Jiandong; Wang, Hao; Guo, Shaojun

2017-12-01

2D electrode materials with layered structures have shown huge potential in the fields of lithium- and sodium-ion batteries. However, their poor conductivity limits the rate performance and cycle stability of batteries. Herein a new colloid chemistry strategy is reported for making 2D ultrathin layered SnSe nanoplates (SnSe NPs) for achieving more efficient alkali-ion batteries. Due to the effect of weak Van der Waals forces, each semiconductive SnSe nanoplate stacks on top of each other, which can facilitate the ion transfer and accommodate volume expansion during the charge and discharge process. This unique structure as well as the narrow-bandgap semiconductor property of SnSe simultaneously meets the requirements of achieving fast ionic and electronic conductivities for alkali-ion batteries. They exhibit high capacity of 463.6 mAh g -1 at 0.05 A g -1 for Na-ion batteries and 787.9 mAh g -1 at 0.2 A g -1 for Li-ion batteries over 300 cycles, and also high stability for alkali-ion batteries. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

99mTc-MIBI/123I-Na subtraction scanning for localized parathyroid adenoma in patients with asymptomatic/mild primary hyperparathyroidism

International Nuclear Information System (INIS)

Tanaka, Yuji; Funahashi, Hiroomi; Imai, Tsuneo

1996-01-01

Primary hyperparathyroidism is most commonly detected as a mild elevation of the serum calcium concentration. In the present study, the utility of 99m Tc-methoxyisobutylisonitrile (MIBI) imaging before initial surgery was evaluated for localizing abnormal parathyroid glands in patients with asymptomatic and mild primary hyperparathyroidism. The results were compared with those of thallium-technetium subtraction scanning (TTSS). 99m Tc-MIBI/ 123 I-Na subtraction scanning was performed in 11 patients, and TTSS was performed in 10 of them. The sensitivity was 100% and the positive predictive value was 92% for 99m Tc-MIBI/ 123 I-Na, while the sensitivity was 50% and the positive predictive value was 100% for TTSS. The smallest gland detected weighed 85 mg in 99m Tc-MIBI/ 123 I-Na, and 570 mg in TTSS. There was a difference between the median weight of adenomas which were detected by 99m Tc-MIBI/ 123 I-Na (754 mg), and those which were detected by TTSS (1,195 mg). These results suggest that TTSS parathyroid scintigraphy could give way to 99m Tc-MIBI/ 123 I-Na parathyroid scintigraphy for improved detection of low-weight abnormal parathyroid glands. (author)

InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.

Science.gov (United States)

Dionízio Moreira, M; Venezuela, P; Miwa, R H

2010-07-16

We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties

International Nuclear Information System (INIS)

Dionizio Moreira, M; Venezuela, P; Miwa, R H

2010-01-01

We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic As↔P swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

International Nuclear Information System (INIS)

Wang Yuanli; Jin, P.; Ye, X.L.; Zhang, C.L.; Shi, G.X.; Li, R.Y.; Chen, Y.H.; Wang, Z.G.

2006-01-01

Highly uniform InAs quantum wires (QWRs) have been obtained on the In 0.5 Al 0.5 As buffer layer grown on the InP substrate 8 (convolutionsign) off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In 0.5 Al 0.5 As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)

Charge pumping in InAs nanowires by surface acoustic waves

NARCIS (Netherlands)

Roddaro, Stefano; Strambini, Elia; Romeo, Lorenzo; Piazza, Vincenzo; Nilsson, Kristian; Samuelson, Lars; Beltram, Fabio

2010-01-01

We investigate the interaction between surface acoustic waves on a piezoelectric LiNbO3 substrate and charge carriers in InAs nanowire transistors. Interdigital transducers are used to excite electromechanical waves on the chip surface and their influence on the transport in the nanowire devices is

Diameter dependence of the thermal conductivity of InAs nanowires

NARCIS (Netherlands)

Swinkels, M.Y.; van Delft, M.R.; Oliveira, D.S.; Cavalli, A.; Zardo, I.; van der Heijden, R.W.; Bakkers, E.P.A.M.

2015-01-01

The diameter dependence of the thermal conductivity of InAs nanowires in the range of 40–1500 nm has been measured. We demonstrate a reduction in thermal conductivity of 80% for 40 nm nanowires, opening the way for further design strategies for nanoscaled thermoelectric materials. Furthermore, we

Random oriented hexagonal nickel hydroxide nanoplates grown on graphene as binder free anode for lithium ion battery with high capacity

Science.gov (United States)

Du, Yingjie; Ma, Hu; Guo, Mingxuan; Gao, Tie; Li, Haibo

2018-05-01

In this work, two-step method has been employed to prepare random oriented hexagonal hydroxide nanoplates on graphene (Ni(OH)2@G) as binder free anode for lithium ion battery (LIB) with high capacity. The morphology, microstructure, crystal phase and elemental bonding have been characterized. When evaluated as anode for LIB, the Ni(OH)2@G exhibited high initial discharge capacity of 1318 mAh/g at the current density of 50 mA/g. After 80 cycles, the capacity was maintained at 834 mAh/g, implying 63.3% remaining. Even the charge rate was increased to 2000 mA/g, an impressive capacity of 141 mAh/g can be obtained, indicating good rate capability. The superior LIB behavior of Ni(OH)2@G is ascribed to the excellent combination between Ni(OH)2 nanoplates and graphene via both covalent chemical bonding and van der Waals interactions.

Comparison between AAPM TG-51 and IAEA TRS-398 for plane parallel ionization chambers irradiated by clinical electron beams

International Nuclear Information System (INIS)

Mahmoud, M.A.

2005-01-01

We compared the results of absorbed dose determined at reference conditions according to AAPM T G-51 and IAEA TRS-398 using plane parallel ionization chambers. The study showed agreement between the two protocols for Holt ,Exradin P11, NACP, Attix RMI 449 and Roos ionization chambers. For Markus ionization chambers the absorbed dose calculated using AAPM TG-51 is higher than that calculated using IAEA TRS-398 by 1.8 % for R 5 0 =2 cm and decrease with increased R 5 0 to reach 1.2 % for R 5 0 =20 cm. For Capintec PS-033 ionization chambers the absorbed dose calculated using AAPM TG-51 is constantly higher than that calculated by IAEA TRS-398 by 1.5 %. A theoretical explanation was introduced for these results

Characterization of multilayer self-organized InAs quantum dot embedded waveguides at 1.3 and 1.5 μm

NARCIS (Netherlands)

Akca, I.B.; Dana, A.; Aydinli, A.; Rossetti, M.; Li, L.; Fiore, A.; Dagli, N.

2007-01-01

In this paper, we characterized the electro-optic coefficient and loss of multilayer InAs quantum dot laser structures at 1309 and 1515 nm. Quantum dot waveguides were grown by molecular beam epitaxy, where the active region is formed by three or five layers of self-assembled InAs QDs. Loss

Ag loaded WO_3 nanoplates for efficient photocatalytic degradation of sulfanilamide and their bactericidal effect under visible light irradiation

International Nuclear Information System (INIS)

Zhu, Wenyu; Liu, Jincheng; Yu, Shuyan; Zhou, Yan; Yan, Xiaoli

2016-01-01

Highlights: • WO_3/Ag heterogeneous composites were fabricated with simply photo-reduction method. • Property changes due to Ag loading were systematically studied. • WO_3/Ag composites efficiently degraded sulfanilamide under visible light irradiation. • WO_3/Ag composites exhibited bactericidal effectS under visible light irradiation. - Abstract: Sulfonamides (SAs) are extensively used antibiotics and their residues in the water bodies propose potential threat to the public. In this study, degradation efficiency of sulfanilamide (SAM), which is the precursor of SAs, using WO_3 nanoplates and their Ag heterogeneous as photocatalysts was investigated. WO_3 nanoplates with uniform size were synthesized by a facile one step hydrothermal method. Different amount of Ag nanoparticles (Ag NPs) were loaded onto WO_3 nanoplates using a photo-reduction method to generate WO_3/Ag composites. The physio-chemical properties of synthesized nanomaterials were systematically characterized. Photodegradation of SAM by WO_3 and WO_3/Ag composites was conducted under visible light irradiation. The results show that WO_3/Ag composites performed much better than pure WO_3 where the highest removal rate was 96.2% in 5 h. Ag as excellent antibacterial agent also endows certain antibacterial efficiency to WO_3, and 100% removal efficiency against Escherichia Coli and Bacillus subtilis could be achieved in 2 h under visible light irradiation for all three WO_3/Ag composites synthesized. The improved performance in terms of SAM degradation and antibacterial activity of WO_3/Ag can be attributed to the improved electron-hole pair separation rate where Ag NPs act as effective electron trapper during the photocatalytic process.

Evaluation of a plane-parallel ionization chamber for low-energy radiotherapy beams

International Nuclear Information System (INIS)

Perini, Ana Paula; Neves, Lucio Pereira; Santos, William de Souza; Caldas, Linda V.E.

2014-01-01

A plane-parallel ionization chamber, with a sensitive volume of 6.3 cm 3 , developed at the Calibration Laboratory of IPEN (LCI), was utilized to verify the possibility of its application in low-energy X-ray beam qualities for radiotherapy (T-qualities). This homemade ion chamber was manufactured using polymethyl methacrylate (PMMA) coated with graphite, and co-axial cables. In order to evaluate the performance of this ionization chamber, some characterization tests were performed: short- and medium-term stability, leakage current, saturation, ion collection efficiency, polarity effect and linearity of response. The maximum value obtained in the short-term stability test was 0.2%, in accordance with the limit value of 0.3% provided by the IEC 60731 standard. The saturation curve was obtained varying the applied voltage from -400 V to +400 V, in steps of 50 V, using the charge collecting time of 20 s. From the saturation curve two other characteristics were analyzed: the polarity effect and the ion collection efficiency, with results within the international recommendations. The leakage current of the ionization chamber was measured in time intervals of 20 minutes, before and after its irradiations, and all the results obtained were in agreement with the IEC 60731 standard. The linearity of response was verified utilizing the T-50(b) radiation quality, and the ionization chamber was exposed to different air kerma rates. The response of the ionization chamber presented a linear behavior. Therefore, all results were considered satisfactory, within international recommendations, indicating that this homemade ionization chamber presents potential routine use in dosimetry of low-energy radiotherapy beams. (author)

Parallelization characteristics of the DeCART code

International Nuclear Information System (INIS)

Cho, J. Y.; Joo, H. G.; Kim, H. Y.; Lee, C. C.; Chang, M. H.; Zee, S. Q.

2003-12-01

This report is to describe the parallelization characteristics of the DeCART code and also examine its parallel performance. Parallel computing algorithms are implemented to DeCART to reduce the tremendous computational burden and memory requirement involved in the three-dimensional whole core transport calculation. In the parallelization of the DeCART code, the axial domain decomposition is first realized by using MPI (Message Passing Interface), and then the azimuthal angle domain decomposition by using either MPI or OpenMP. When using the MPI for both the axial and the angle domain decomposition, the concept of MPI grouping is employed for convenient communication in each communication world. For the parallel computation, most of all the computing modules except for the thermal hydraulic module are parallelized. These parallelized computing modules include the MOC ray tracing, CMFD, NEM, region-wise cross section preparation and cell homogenization modules. For the distributed allocation, most of all the MOC and CMFD/NEM variables are allocated only for the assigned planes, which reduces the required memory by a ratio of the number of the assigned planes to the number of all planes. The parallel performance of the DeCART code is evaluated by solving two problems, a rodded variation of the C5G7 MOX three-dimensional benchmark problem and a simplified three-dimensional SMART PWR core problem. In the aspect of parallel performance, the DeCART code shows a good speedup of about 40.1 and 22.4 in the ray tracing module and about 37.3 and 20.2 in the total computing time when using 48 CPUs on the IBM Regatta and 24 CPUs on the LINUX cluster, respectively. In the comparison between the MPI and OpenMP, OpenMP shows a somewhat better performance than MPI. Therefore, it is concluded that the first priority in the parallel computation of the DeCART code is in the axial domain decomposition by using MPI, and then in the angular domain using OpenMP, and finally the angular

Deflection of electron beams by ground planes

International Nuclear Information System (INIS)

Fernsler, R.F.; Lampe, M.

1991-01-01

Analytic methods are used to determine the effect of a nearby ground plane on the trajectory of a relativistic electron beam passing through dense gas. The beam is shown to respond to the ground plane in one of two distinct modes, determined by beam current and energy. Low-power beams deflect from the ground plane and tear longitudinally. High-power beams do not deflect or tear but tilt, i.e., the beam axis is no longer parallel to the direction of propagation. This conclusion is reached by computing the net beam force as a superposition of the ''bare'' ground-plane forces, the shielding forces from the beam-generated plasma, the body coupling forces induced by beam tilt, and the force that arises as the beam separates from the plasma. Effects from electromagnetic retardation and ground resistivity are shown to be negligible in typical cases of interest, and the interaction between ground planes and other external forces is discussed as well

Carrier dynamics in InAs quantum dots embedded in InGaAs/GaAs multi quantum well structures

International Nuclear Information System (INIS)

Espinola, J L Casas; Dybic, M; Ostapenko, S; Torchynska, T V; Polupan, G

2007-01-01

Ground and multi excited state photoluminescence, as well as its temperature dependence, in InAs quantum dots embedded in symmetric In x Ga 1-x As/GaAs (x = 0.15) quantum wells (DWELL) have been investigated. The solution of the set of rate equations for exciton dynamics (relaxation into QWs or QDs and thermal escape) solved by us earlier is used for analysis the variety of thermal activation energies of photoluminescence thermal quenching for ground and multi excited states of InAs QDs. The obtained solutions were used at the discussion of the variety of activation energies of PL thermal quenching in InAs QDs. It is revealed three different regimes of thermally activated quenching of the QD PL intensity. These three regimes were attributed to thermal escape of excitons: i) from the high energy excited states of InAs QDs into the WL with follows exciton re-localization; ii) from the In x Ga 1-x As QWs into the GaAs barrier and iii) from the WL into the GaAs barrier with their subsequent nonradiative recombination in GaAs barrier

Calculation of Nonlinear Thermoelectric Coefficients of InAs1-xSbx Using Monte Carlo Method

Energy Technology Data Exchange (ETDEWEB)

Sadeghian, RB; Bahk, JH; Bian, ZX; Shakouri, A

2011-12-28

It was found that the nonlinear Peltier effect could take place and increase the cooling power density when a lightly doped thermoelectric material is under a large electrical field. This effect is due to the Seebeck coefficient enhancement from an electron distribution far from equilibrium. In the nonequilibrium transport regime, the solution of the Boltzmann transport equation in the relaxation-time approximation ceases to apply. The Monte Carlo method, on the other hand, proves to be a capable tool for simulation of semiconductor devices at small scales as well as thermoelectric effects with local nonequilibrium charge distribution. InAs1-xSb is a favorable thermoelectric material for nonlinear operation owing to its high mobility inherited from the binary compounds InSb and InAs. In this work we report simulation results on the nonlinear Peltier power of InAs1-xSb at low doping levels, at room temperature and at low temperatures. The thermoelectric power factor in nonlinear operation is compared with the maximum value that can be achieved with optimal doping in the linear transport regime.

Rapid optical determination of topological insulator nanoplate thickness and oxidation

Directory of Open Access Journals (Sweden)

Fan Yang

2017-01-01

Full Text Available The stability of 2D antimony telluride (Sb2Te3 nanoplates in ambient conditions is elucidated. These materials exhibit an anisotropic oxidation mode, and CVD synthesized samples oxidize at a much faster rate than exfoliated samples investigated in previous studies. Optical measurement techniques are introduced to rapidly measure the oxidation modes and thickness of 2D materials. Auger characterization were conducted to confirm that oxygen replaces tellurium as opposed to antimony under ambient conditions. No surface morphology evolution was detected in AFM before and after exposure to air. These techniques were employed to determine the origin of the thickness dependent color change effect in Sb2Te3. It is concluded that this effect is a combination of refractive index change due to oxidation and Fresnel effects.

The light wave flow effect in a plane-parallel layer with a quasi-zero refractive index under the action of bounded light beams

International Nuclear Information System (INIS)

Gadomsky, O. N.; Shchukarev, I. A.

2016-01-01

It is shown that external optical radiation in the 450–1200 nm range can be efficiently transformed under the action of bounded light beams to a surface wave that propagates along the external and internal boundaries of a plane-parallel layer with a quasi-zero refractive index. Reflection regimes with complex and real angles of refraction in the layer are considered. The layer with a quasi-zero refractive index in this boundary problem is located on a highly reflective metal substrate; it is shown that the uniform low reflection of light is achieved in the wavelength range under study.

Reconstruction of an InAs nanowire using geometric tomography

DEFF Research Database (Denmark)

Pennington, Robert S.; König, Stefan; Alpers, Andreas

Geometric tomography and conventional algebraic tomography algorithms are used to reconstruct cross-sections of an InAs nanowire from a tilt series of experimental annular dark-field images. Both algorithms are also applied to a test object to assess what factors affect the reconstruction quality....... When using the present algorithms, geometric tomography is faster, but artifacts in the reconstruction may be difficult to recognize....

Subcostal Transverse Abdominis Plane Block for Acute Pain Management: A Review.

Science.gov (United States)

Soliz, Jose M; Lipski, Ian; Hancher-Hodges, Shannon; Speer, Barbra Bryce; Popat, Keyuri

2017-10-01

The subcostal transverse abdominis plane (SCTAP) block is the deposition of local anesthetic in the transverse abdominis plane inferior and parallel to the costal margin. There is a growing consensus that the SCTAP block provides better analgesia for upper abdominal incisions than the traditional transverse abdominis plane block. In addition, when used as part of a four-quadrant transverse abdominis plane block, the SCTAP block may provide adequate analgesia for major abdominal surgery. The purpose of this review is to discuss the SCTAP block, including its indications, technique, local anesthetic solutions, and outcomes.

Dose distributions of pendulum fields in the field border plane

International Nuclear Information System (INIS)

Schrader, R.

1986-01-01

Calculations (program SIDOS-U2) and LiF measurements taken in a cylindric water phantom are used to investigate the isodose distributions of different pendulum irradiation methods (Co-60) in a plane which is parallel to the central ray plane and crosses the field borders at the depth of the axis. The dose values compared to the maximum values of the central ray plane are completely different for each pendulum method. In case of monoaxial pendulum methods around small angles, the maximum dose value found in the border plane is less than 50% of the dose in the central ray plane. The relative maximum of the border plane moves to tissues laying in a greater depth. In case of bi-axial methods, the maximum value of the border plane can be much more than 50% of the maximum dose measured in the central ray plane. (orig.) [de

Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

Science.gov (United States)

Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

2005-01-01

In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures

Science.gov (United States)

Möller, M.; Oliveira, D. S.; Sahoo, P. K.; Cotta, M. A.; Iikawa, F.; Motisuke, P.; Molina-Sánchez, A.; de Lima, M. M., Jr.; García-Cristóbal, A.; Cantarero, A.

2017-07-01

InAs nanowires grown by vapor-liquid-solid (VLS) method are investigated by photoluminescence. We observe that the Fermi energy of all samples is reduced by ˜20 meV when the size of the Au nanoparticle used for catalysis is increased from 5 to 20 nm. Additional capping with a thin InP shell enhances the optical emission and does not affect the Fermi energy. The unexpected behavior of the Fermi energy is attributed to the differences in the residual donor (likely carbon) incorporation in the axial (low) and lateral (high incorporation) growth in the VLS and vapor-solid (VS) methods, respectively. The different impurity incorporation rate in these two regions leads to a core/shell InAs homostructure. In this case, the minority carriers (holes) diffuse to the core due to the built-in electric field created by the radial impurity distribution. As a result, the optical emission is dominated by the core region rather than by the more heavily doped InAs shell. Thus, the photoluminescence spectra and the Fermi energy become sensitive to the core diameter. These results are corroborated by a theoretical model using a self-consistent method to calculate the radial carrier distribution and Fermi energy for distinct diameters of Au nanoparticles.

Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

DEFF Research Database (Denmark)

Albert, F.; Stobbe, Søren; Schneider, C.

2010-01-01

We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

Quantum Dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates

Energy Technology Data Exchange (ETDEWEB)

Ortiz F E; Mishurnyi V; Gorbatchev A; De Anda F [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Av. Karacorum 1470, Col. Lomas 4a Sec., CP 78210San Luis PotosI (Mexico); Prutskij T, E-mail: fcoe_ov@prodigy.net.mx, E-mail: andre@cactus.iico.uaslp.mx [BUAP, Instituto de Ciencias, Apartado Postal 207, 72000, Puebla (Mexico)

2011-01-01

In this work we inform about quantum dots (QD) obtained by Liquid Phase Epitaxy (LPE) on GaAs substrates from under-saturated In-As liquid phases. In our processes, we have prepared saturated In-rich liquid phases by dissolving an InAs wafer at one of the temperatures interval from 450 to 414 C for 60 minutes. The contact between In-As liquid phase and the GaAs substrate was always done at a constant temperature of 444 C for 5 seconds. Thus, the growth temperature for most of the samples was higher than the liquidus temperature. We think that the growth driving force is related to a transient process that occurs when the system is trying to reach equilibrium. Under the atom force microscope (AFM) we have observed nano-islands on the surfaces of the samples obtained from under-saturated liquid phases prepared at 438, 432 and 426 C. The 25 K photoluminescence spectrum shows a peak at a 1.33 eV, in addition to the GaAs related line.

Studies on the controlled growth of InAs nanostructures on scission surfaces

International Nuclear Information System (INIS)

Bauer, J.

2006-01-01

The aim of this thesis was the controlled alignment of self-assembled InAs nano-structures on a {110}-oriented surface. The surface is prestructured with the atomic precision offered by molecular beam epitaxy, using the cleaved edge overgrowth-technique. On all samples grown within this work, the epitaxial template in the first growth step was deposited on a (001)GaAs substrate, while the InAs-layer forming the nanostructures during the second growth step was grown on cleaved {110}-GaAs surfaces. Atomic Force Microscopy (AFM) investigations demonstrate the formation of quantum dot (QD)-like nanostructures on top of the AlAs-stripes. X-ray diffraction measurements on large arrays of aligned quantum dots demonstrate that the quantum dots are formed of pure InAs. First investigations on the optical properties of these nanostructures were done using microphotoluminescence-spectroscopy with both high spatial and spectral resolution. (orig.)

Control of in-plane texture of body centered cubic metal thin films

International Nuclear Information System (INIS)

Harper, J.M.; Rodbell, K.P.; Colgan, E.G.; Hammond, R.H.

1997-01-01

We show that dramatically different in-plane textures can be produced in body centered cubic (bcc) metal thin films deposited on amorphous substrates under different deposition conditions. The crystallographic orientation distribution of polycrystalline bcc metal thin films on amorphous substrates often has a strong left-angle 110 right-angle fiber texture, indicating that {110} planes are parallel to the substrate plane. When deposition takes place under bombardment by energetic ions or atoms at an off-normal angle of incidence, the left-angle 110 right-angle fiber texture develops an in-plane texture, indicating nonrandom azimuthal orientations of the crystallites. Three orientations in Nb films have been observed under different deposition geometries, in which the energetic particle flux coincides with channeling directions in the bcc crystal structure. In-plane orientations in Mo films have also been obtained in magnetron sputtering systems with various configurations. These are described, and an example is given in which the in-plane orientation of Mo films deposited in two different in-line magnetron sputtering systems differs by a 90 degree rotation. In these two cases, there is a strong left-angle 110 right-angle fiber texture, but the in-plane left-angle 100 right-angle direction is oriented parallel to the scan direction in one system, and perpendicular to the scan direction in the other system. The conditions which produce such different in-plane textures in two apparently similar sputtering systems are discussed. copyright 1997 American Institute of Physics

Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures

NARCIS (Netherlands)

Akca, I.B.; Dana, A.; Aydinli, A.; Rossetti, M.; Li, L.; Dagli, N.; Fiore, A.

2007-01-01

The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed.

Rapid adsorption properties of flower-like BiOI nanoplates synthesized via a simple EG-assisted solvothermal process

Energy Technology Data Exchange (ETDEWEB)

Zhang, Bin; Ji, Guangbin, E-mail: gbji@nuaa.edu.cn [Nanjing University of Aeronautics and Astronautics, College of Materials Science and Technology (China); Gondal, M. A. [King Fahd University of Petroleum and Minerals, Physics Department (Saudi Arabia); Liu, Yousong; Zhang, Xingmiao; Chang, Xiaofeng; Li, Nianwu [Nanjing University of Aeronautics and Astronautics, College of Materials Science and Technology (China)

2013-07-15

Uniform well-crystallized flower-like BiOI nanoplates contained 3.7 nm mesopores, which may be attributed to the internanosheet spaces of BiOI with maximum pore diameters of about 30 nm, were successfully synthesized via a simple ethylene glycol-assisted solvothermal method. The as-prepared porous BiOI nanoplates exhibited excellent adsorption ability, and the saturated extent of adsorption of BiOI over an RhB solution was as high as 197 mg/g, which is much higher than those for BiOCl and BiOBr prepared via the same method and with a similar surface area. The probable adsorption mechanism could have originated from the interaction between the I atom in BiOI and a proton in RhB at different pH values and temperatures. With visible light irradiation ({lambda} > 420 nm), 80 % of the RhB was degraded in 4 h, while BiOI still demonstrated reasonably outstanding photocatalytic ability under green light ({lambda} = 550 {+-} 15 nm) because of its low-energy gap (1.72 eV). The degradation test for BiOI under irradiation at {lambda} = 550 {+-} 15 nm is an excellent achievement for field applications because the catalyst can be applied in solar irradiation to remove organic pollutants, which may be of great value BiOI complex.

A colorimetric method for highly sensitive and accurate detection of iodide by finding the critical color in a color change process using silver triangular nanoplates

Energy Technology Data Exchange (ETDEWEB)

Yang, Xiu-Hua; Ling, Jian, E-mail: lingjian@ynu.edu.cn; Peng, Jun; Cao, Qiu-E., E-mail: qecao@ynu.edu.cn; Ding, Zhong-Tao; Bian, Long-Chun

2013-10-10

Graphical abstract: -- Highlights: •Demonstrated a new colorimetric strategy for iodide detection by silver nanoplates. •The colorimetric strategy is to find the critical color in a color change process. •The colorimetric strategy is more accurate and sensitive than common colorimetry. •Discovered a new morphological transformation phenomenon of silver nanoplates. -- Abstract: In this contribution, we demonstrated a novel colorimetric method for highly sensitive and accurate detection of iodide using citrate-stabilized silver triangular nanoplates (silver TNPs). Very lower concentration of iodide can induce an appreciable color change of silver TNPs solution from blue to yellow by fusing of silver TNPs to nanoparticles, as confirmed by UV–vis absorption spectroscopy and transmission electron microscopy (TEM). The principle of this colorimetric assay is not an ordinary colorimetry, but a new colorimetric strategy by finding the critical color in a color change process. With this strategy, 0.1 μM of iodide can be recognized within 30 min by naked-eyes observation, and lower concentration of iodide down to 8.8 nM can be detected using a spectrophotometer. Furthermore, this high sensitive colorimetric assay has good accuracy, stability and reproducibility comparing with other ordinary colorimetry. We believe this new colorimetric method will open up a fresh insight of simple, rapid and reliable detection of iodide and can find its future application in the biochemical analysis or clinical diagnosis.

A colorimetric method for highly sensitive and accurate detection of iodide by finding the critical color in a color change process using silver triangular nanoplates

International Nuclear Information System (INIS)

Yang, Xiu-Hua; Ling, Jian; Peng, Jun; Cao, Qiu-E.; Ding, Zhong-Tao; Bian, Long-Chun

2013-01-01

Graphical abstract: -- Highlights: •Demonstrated a new colorimetric strategy for iodide detection by silver nanoplates. •The colorimetric strategy is to find the critical color in a color change process. •The colorimetric strategy is more accurate and sensitive than common colorimetry. •Discovered a new morphological transformation phenomenon of silver nanoplates. -- Abstract: In this contribution, we demonstrated a novel colorimetric method for highly sensitive and accurate detection of iodide using citrate-stabilized silver triangular nanoplates (silver TNPs). Very lower concentration of iodide can induce an appreciable color change of silver TNPs solution from blue to yellow by fusing of silver TNPs to nanoparticles, as confirmed by UV–vis absorption spectroscopy and transmission electron microscopy (TEM). The principle of this colorimetric assay is not an ordinary colorimetry, but a new colorimetric strategy by finding the critical color in a color change process. With this strategy, 0.1 μM of iodide can be recognized within 30 min by naked-eyes observation, and lower concentration of iodide down to 8.8 nM can be detected using a spectrophotometer. Furthermore, this high sensitive colorimetric assay has good accuracy, stability and reproducibility comparing with other ordinary colorimetry. We believe this new colorimetric method will open up a fresh insight of simple, rapid and reliable detection of iodide and can find its future application in the biochemical analysis or clinical diagnosis

Ag loaded WO{sub 3} nanoplates for efficient photocatalytic degradation of sulfanilamide and their bactericidal effect under visible light irradiation

Energy Technology Data Exchange (ETDEWEB)

Zhu, Wenyu [School of Civil and Environmental Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Nanyang Environment and Water Research Institute (NEWRI), Nanyang Technological University, 1 Cleantech Loop, CleanTech One, Singapore 637141 (Singapore); Liu, Jincheng, E-mail: JCLIU@ntu.edu.sg [School of Civil and Environmental Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Current address: Faculty of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510009 (China); Yu, Shuyan; Zhou, Yan [School of Civil and Environmental Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Nanyang Environment and Water Research Institute (NEWRI), Nanyang Technological University, 1 Cleantech Loop, CleanTech One, Singapore 637141 (Singapore); Yan, Xiaoli, E-mail: XLYAN@ntu.edu.sg [School of Civil and Environmental Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Current address: Environmental and Water Technology Centre of Innovation, Ngee Ann Polytechnic, 535 Clementi Road, Singapore 599489 (Singapore)

2016-11-15

Highlights: • WO{sub 3}/Ag heterogeneous composites were fabricated with simply photo-reduction method. • Property changes due to Ag loading were systematically studied. • WO{sub 3}/Ag composites efficiently degraded sulfanilamide under visible light irradiation. • WO{sub 3}/Ag composites exhibited bactericidal effectS under visible light irradiation. - Abstract: Sulfonamides (SAs) are extensively used antibiotics and their residues in the water bodies propose potential threat to the public. In this study, degradation efficiency of sulfanilamide (SAM), which is the precursor of SAs, using WO{sub 3} nanoplates and their Ag heterogeneous as photocatalysts was investigated. WO{sub 3} nanoplates with uniform size were synthesized by a facile one step hydrothermal method. Different amount of Ag nanoparticles (Ag NPs) were loaded onto WO{sub 3} nanoplates using a photo-reduction method to generate WO{sub 3}/Ag composites. The physio-chemical properties of synthesized nanomaterials were systematically characterized. Photodegradation of SAM by WO{sub 3} and WO{sub 3}/Ag composites was conducted under visible light irradiation. The results show that WO{sub 3}/Ag composites performed much better than pure WO{sub 3} where the highest removal rate was 96.2% in 5 h. Ag as excellent antibacterial agent also endows certain antibacterial efficiency to WO{sub 3}, and 100% removal efficiency against Escherichia Coli and Bacillus subtilis could be achieved in 2 h under visible light irradiation for all three WO{sub 3}/Ag composites synthesized. The improved performance in terms of SAM degradation and antibacterial activity of WO{sub 3}/Ag can be attributed to the improved electron-hole pair separation rate where Ag NPs act as effective electron trapper during the photocatalytic process.

Mg-doped hydroxyapatite nanoplates for biomedical applications: A surfactant assisted microwave synthesis and spectroscopic investigations

International Nuclear Information System (INIS)

Mishra, Vijay Kumar; Bhattacharjee, Birendra Nath; Parkash, Om; Kumar, Devendra; Rai, Shyam Bahadur

2014-01-01

Highlights: • Microwave irradiation technique: employed for the synthesis of Mg-HAp nanoplates. • Surfactant (EDTA) assisted synthesis of Mg-HAp. • FT-IR and Raman analysis of functional groups of Mg-HAp. - Abstract: Nanoplates of Mg doped hydroxyapatite (Mg-HAp) were derived successfully and rapidly via microwave irradiation technique. Hydroxyapatite (HAp) is the hard tissues and main inorganic component in mammals. Different nanostructures of HAp exist in different parts of human bone but nanorods are very common due to its intrinsic nature to grow in rode-like structure under physiological as well as under applied ambient conditions in laboratory. On the addition of Mg at very low level (0.06 mol%) in pure HAp results the formation of 2-D plate-like nanostructures rather than rod-like which is the matter of interest. In this attempt our efforts have been focused on the study of effect of Mg incorporation on structural and spectroscopic properties of HAp prepared via microwave irradiation technique. This technique is preferred due to several advantages viz. very fast as well as homogeneous heating, time/energy saving and eco-friendliness. The calcium nitrate tetrahydrate (Ca(NO 3 ) 2 ⋅4H 2 O)) as a source of calcium, magnesium nitrate hexahydrate (Mg(NO 3 ) 2 ⋅6H 2 O) as a source of magnesium, disodium hydrogen phosphate dihydrate (NaH 2 PO 4 ⋅2H 2 O) as a source of phosphorous and sodium ethylene diamine tetra acetate (NaEDTA) as a surfactant were used as starting reagents. Sodium hydroxide (NaOH) pellets were employed to adjust the pH value of final solution. The solution of fixed pH value was kept into the microwave oven generating waves of frequency 2.45 GHz (water absorption frequency) and power 750 W for 8 min. The precipitate thus obtained was washed, centrifuged and then dried at 100 °C for 2 h. Dried powder was then calcined at 700 °C for 2 h. The bright white powder thus obtained was characterized structurally using X-ray diffraction and

Mg-doped hydroxyapatite nanoplates for biomedical applications: A surfactant assisted microwave synthesis and spectroscopic investigations

Energy Technology Data Exchange (ETDEWEB)

Mishra, Vijay Kumar [Department of Physics, Faculty of Science, Banaras Hindu University, Varanasi 221005 (India); Bhattacharjee, Birendra Nath; Parkash, Om [Department of Ceramic Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Kumar, Devendra, E-mail: devendra.cer@iitbhu.ac.in [Department of Ceramic Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Rai, Shyam Bahadur, E-mail: sbrai49@yahoo.co.in [Department of Physics, Faculty of Science, Banaras Hindu University, Varanasi 221005 (India)

2014-11-25

Highlights: • Microwave irradiation technique: employed for the synthesis of Mg-HAp nanoplates. • Surfactant (EDTA) assisted synthesis of Mg-HAp. • FT-IR and Raman analysis of functional groups of Mg-HAp. - Abstract: Nanoplates of Mg doped hydroxyapatite (Mg-HAp) were derived successfully and rapidly via microwave irradiation technique. Hydroxyapatite (HAp) is the hard tissues and main inorganic component in mammals. Different nanostructures of HAp exist in different parts of human bone but nanorods are very common due to its intrinsic nature to grow in rode-like structure under physiological as well as under applied ambient conditions in laboratory. On the addition of Mg at very low level (0.06 mol%) in pure HAp results the formation of 2-D plate-like nanostructures rather than rod-like which is the matter of interest. In this attempt our efforts have been focused on the study of effect of Mg incorporation on structural and spectroscopic properties of HAp prepared via microwave irradiation technique. This technique is preferred due to several advantages viz. very fast as well as homogeneous heating, time/energy saving and eco-friendliness. The calcium nitrate tetrahydrate (Ca(NO{sub 3}){sub 2}⋅4H{sub 2}O)) as a source of calcium, magnesium nitrate hexahydrate (Mg(NO{sub 3}){sub 2}⋅6H{sub 2}O) as a source of magnesium, disodium hydrogen phosphate dihydrate (NaH{sub 2}PO{sub 4}⋅2H{sub 2}O) as a source of phosphorous and sodium ethylene diamine tetra acetate (NaEDTA) as a surfactant were used as starting reagents. Sodium hydroxide (NaOH) pellets were employed to adjust the pH value of final solution. The solution of fixed pH value was kept into the microwave oven generating waves of frequency 2.45 GHz (water absorption frequency) and power 750 W for 8 min. The precipitate thus obtained was washed, centrifuged and then dried at 100 °C for 2 h. Dried powder was then calcined at 700 °C for 2 h. The bright white powder thus obtained was characterized

2-D modeling of dual-mode acoustic phonon excitation of a triangular nanoplate

Science.gov (United States)

Tai, Po-Tse; Yu, Pyng; Tang, Jau

2010-08-01

In this theoretical work, we investigated coherent phonon excitation of a triangular nanoplate based on 2-D Fermi-Pasta-Ulam lattice model. Based on the two-temperature model commonly used in description of laser heating of metals, we considered two kinds of forces related to electronic and lattice stresses. Based on extensive simulation and analysis, we identified two major planar phonon modes, namely, a standing wave mode related to the triangle bisector and another mode corresponding to half of the side length. This work elucidates the roles of laser-induced electronic stress and lattice stress in controlling the initial phase and the amplitude ratio between these two phonon modes.

Stress evolution during growth of InAs on GaAs measured by an in-situ cantilever beam setup

Energy Technology Data Exchange (ETDEWEB)

Hu Dongzhi

2007-02-13

The influence of stress on the growth of InAs on GaAs(001) by molecular beam epitaxy (MBE) is investigated in this thesis. Film force curves were measured for InAs deposition under As-rich as well as In-rich growth conditions. The growth under As-rich conditions proceeds in the Stranski- Krastanov growth mode, meaning that quantum dots are formed after the initial growth of a wetting layer. During subsequent growth interruptions or intentional annealing at the growth temperature, the quantum dots undergo ripening. This growth mode of InAs films and the subsequent annealing behavior were studied in detail in this thesis. To understand the influence of strain on the growth mechanisms, the film force curves were analyzed and correlated to the morphological evolution of the InAs films during deposition and especially during annealing. Models were developed to fit and explain the relaxation of the film force measured during the annealing of InAs quantum dots. At temperatures lower than 470 C, quantum dots undergo standard Ostwald ripening. Different mechanisms, such as kinetic and diffusion limited, determine the ripening process. Fits of models based on these mechanisms to the film force relaxation curves, show, that although the relaxation curve for annealing at 440 C can be fitted reasonably well with all the models, the model describing ripening limited by the diffusion along dot boundaries yields a slightly better fit. The relaxation curves obtained at 455 C and 470 C can be fitted very well only with the model in which the ripening is controlled by the attachment/detachment of atoms on the dot surface. Annealing of quantum dots at temperatures higher than 500 C shows a very different behavior. Atomic force microscopy images reveal that the quantum dots ripen first and then dissolve after 450 s-600 s annealing. (orig.)

Stress evolution during growth of InAs on GaAs measured by an in-situ cantilever beam setup

International Nuclear Information System (INIS)

Hu Dongzhi

2007-01-01

The influence of stress on the growth of InAs on GaAs(001) by molecular beam epitaxy (MBE) is investigated in this thesis. Film force curves were measured for InAs deposition under As-rich as well as In-rich growth conditions. The growth under As-rich conditions proceeds in the Stranski- Krastanov growth mode, meaning that quantum dots are formed after the initial growth of a wetting layer. During subsequent growth interruptions or intentional annealing at the growth temperature, the quantum dots undergo ripening. This growth mode of InAs films and the subsequent annealing behavior were studied in detail in this thesis. To understand the influence of strain on the growth mechanisms, the film force curves were analyzed and correlated to the morphological evolution of the InAs films during deposition and especially during annealing. Models were developed to fit and explain the relaxation of the film force measured during the annealing of InAs quantum dots. At temperatures lower than 470 C, quantum dots undergo standard Ostwald ripening. Different mechanisms, such as kinetic and diffusion limited, determine the ripening process. Fits of models based on these mechanisms to the film force relaxation curves, show, that although the relaxation curve for annealing at 440 C can be fitted reasonably well with all the models, the model describing ripening limited by the diffusion along dot boundaries yields a slightly better fit. The relaxation curves obtained at 455 C and 470 C can be fitted very well only with the model in which the ripening is controlled by the attachment/detachment of atoms on the dot surface. Annealing of quantum dots at temperatures higher than 500 C shows a very different behavior. Atomic force microscopy images reveal that the quantum dots ripen first and then dissolve after 450 s-600 s annealing. (orig.)

Fabrication of GaAs/Al0.3Ga0.7As multiple quantum well nanostructures on (100) si substrate using a 1-nm InAs relief layer.

Science.gov (United States)

Oh, H J; Park, S J; Lim, J Y; Cho, N K; Song, J D; Lee, W; Lee, Y J; Myoung, J M; Choi, W J

2014-04-01

Nanometer scale thin InAs layer has been incorporated between Si (100) substrate and GaAs/Al0.3Ga0.7As multiple quantum well (MQW) nanostructure in order to reduce the defects generation during the growth of GaAs buffer layer on Si substrate. Observations based on atomic force microscopy (AFM) and transmission electron microscopy (TEM) suggest that initiation and propagation of defect at the Si/GaAs interface could be suppressed by incorporating thin (1 nm in thickness) InAs layer. Consequently, the microstructure and resulting optical properties improved as compared to the MQW structure formed directly on Si substrate without the InAs layer. It was also observed that there exists some limit to the desirable thickness of the InAs layer since the MQW structure having thicker InAs layer (4 nm-thick) showed deteriorated properties.

Upotreba začina u proizvodnji tradicionalnih sireva

OpenAIRE

Josipović, Renata; Markov, Ksenija; Frece, Jadranka; Stanzer, Damir; Cvitković, Ante; Mrvčić, Jasna

2016-01-01

Sir je visoko cijenjeni mliječni proizvod u mnogim zemljama svijeta, a posebna pažnja pridaje se tradicionalnim sirevima, koji nisu samo hrana već i dio kulture i obilježja neke zemlje. Zahvaljujući zemljopisnom položaju i klimatsko-vegetacijskoj raznolikosti Republike Hrvatske, u pojedinim regijama razvijena je proizvodnja različitih tradicionalnih sireva uz upotrebu začina. Kod proizvodnje sireva sa začinima, začini se dodaju ili u sir koji se potom oblikuje, ili se sir omata lišćem začinsk...

Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots

Directory of Open Access Journals (Sweden)

Lin Chien-Hung

2011-01-01

Full Text Available Abstract In this report, the influence of the intrinsic transitions between bound-to-delocalized states (crossed states or quasicontinuous density of electron-hole states on photoluminescence excitation (PLE spectra of InAs quantum dots (QDs was investigated. The InAs QDs were different in size, shape, and number of bound states. Results from the PLE spectroscopy at low temperature and under a high magnetic field (up to 14 T were compared. Our findings show that the profile of the PLE resonances associated with the bound transitions disintegrated and broadened. This was attributed to the coupling of the localized QD excited states to the crossed states and scattering of longitudinal acoustical (LA phonons. The degree of spectral linewidth broadening was larger for the excited state in smaller QDs because of the higher crossed joint density of states and scattering rate.

X-ray characterization Si-doped InAs nanowires grown on GaAs

Energy Technology Data Exchange (ETDEWEB)

Saqib, Muhammad; Biermanns, Andreas; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik (Germany); Grap, Thomas; Lepsa, Mihail [Forschungszentrum Juelich, Institut fuer Bio- und Nanosysteme (Germany)

2011-07-01

Semiconductor nanowires (NW) are of particular interest due to the ability to synthesize single-crystalline 1D epitaxial structures and heterostructures in the nanometer range. However, many details of the growth mechanism are not well understood. In particular, understanding and control of doping mechanisms during NW growth are important issues for technological applications. In this contribution we present a x-ray diffraction study of the influence of Si-doping in InAs NWs grown on GaAs(111) substrates using In-assisted MBE growth. With the help of coplanar and asymmetric x-ray diffraction, we monitor the evolution of the lattice constants and structure of the InAs NWs as function of doping concentration. We observe that increasing the nominal doping concentration leads to the appearance of additional diffraction maxima corresponding to material whose vertical lattice parameter is 1% smaller than that of the undoped nanowires. Those lattice parameters can be attributed with alloy formation in the form of island like crystallites.

Improvement of image quality of holographic projection on tilted plane using iterative algorithm

Science.gov (United States)

Pang, Hui; Cao, Axiu; Wang, Jiazhou; Zhang, Man; Deng, Qiling

2017-12-01

Holographic image projection on tilted plane has an important application prospect. In this paper, we propose a method to compute the phase-only hologram that can reconstruct a clear image on tilted plane. By adding a constant phase to the target image of the inclined plane, the corresponding light field distribution on the plane that is parallel to the hologram plane is derived through the titled diffraction calculation. Then the phase distribution of the hologram is obtained by the iterative algorithm with amplitude and phase constrain. Simulation and optical experiment are performed to show the effectiveness of the proposed method.

Molecular dynamics growth modeling of InAs1-xSbx-based type-II superlattice

Science.gov (United States)

Ciani, Anthony J.; Grein, Christoph H.; Irick, Barry; Miao, Maosheng; Kioussis, Nicholas

2017-09-01

Type-II strained-layer superlattices (T2SL) based on InAs1-xSbx are a promising photovoltaic detector material technology for thermal imaging; however, Shockley-Read-Hall recombination and generation rates are still too high for thermal imagers based on InAs1-xSbx T2SL to reach their ideal performance. Molecular dynamics simulations using the Stillinger-Weber (SW) empirical potentials are a useful tool to study the growth of tetrahedral coordinated crystals and the nonequilibrium formation of defects within them, including the long-range effects of strain. SW potentials for the possible atomic interactions among {Ga, In, As, Sb} were developed by fitting to ab initio calculations of elastically distorted zinc blende and diamond unit cells. The SW potentials were tested against experimental observations of molecular beam epitaxial (MBE) growth and then used to simulate the MBE growth of InAs/InAs0.5Sb0.5 T2SL on GaSb substrates over a range of processes parameters. The simulations showed and helped to explain Sb cross-incorporation into the InAs T2SL layers, Sb segregation within the InAsSb layers, and identified medium-range defect clusters involving interstitials and their induction of interstitial-vacancy pairs. Defect formation was also found to be affected by growth temperature and flux stoichiometry.

Increasing the quantum efficiency of GaAs solar cells by embedding InAs quantum dots

Science.gov (United States)

Salii, R. A.; Mintairov, S. A.; Nadtochiy, A. M.; Payusov, A. S.; Brunkov, P. N.; Shvarts, M. Z.; Kalyuzhnyy, N. A.

2016-11-01

Development of Metalorganic Vapor Phase Epitaxy (MOVPE) technology of InAs quantum dots (QDs) in GaAs for photovoltaic applications is presented. The growth peculiarities in InAs-GaAs lattice-mismatched system were considered. The photoluminescence (PL) intensity dependences on different growth parameters were obtained. The multimodal distribution of QDs by sizes was found using AFM and PL methods. GaAs solar cell nanoheterostructures with imbedded QD arrays were designed and obtained. Ones have been demonstrated a significant increase of quantum efficiency and photogenerated current of QD solar cells due to photo effect in InAs QD array (0.59 mA/cm2 for AM1.5D and 82 mA/cm2 for AM0).

Self-stabilized discharge filament in plane-parallel barrier discharge configuration: formation, breakdown mechanism, and memory effects

Science.gov (United States)

Tschiersch, R.; Nemschokmichal, S.; Bogaczyk, M.; Meichsner, J.

2017-10-01

Single self-stabilized discharge filaments were investigated in the plane-parallel electrode configuration. The barrier discharge was operated inside a gap of 3 mm shielded by glass plates to both electrodes, using helium-nitrogen mixtures and a square-wave feeding voltage at a frequency of 2 kHz. The combined application of electrical measurements, ICCD camera imaging, optical emission spectroscopy and surface charge diagnostics via the electro-optic Pockels effect allowed the correlation of the discharge development in the volume and on the dielectric surfaces. The formation criteria and existence regimes were found by systematic variation of the nitrogen admixture to helium, the total pressure and the feeding voltage amplitude. Single self-stabilized discharge filaments can be operated over a wide parameter range, foremost, by significant reduction of the voltage amplitude after the operation in the microdischarge regime. Here, the outstanding importance of the surface charge memory effect on the long-term stability was pointed out by the recalculated spatio-temporally resolved gap voltage. The optical emission revealed discharge characteristics that are partially reminiscent of both the glow-like barrier discharge and the microdischarge regime, such as a Townsend pre-phase, a fast cathode-directed ionization front during the breakdown and radially propagating surface discharges during the afterglow.

Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels

Science.gov (United States)

Osintsev, D.; Sverdlov, V.; Stanojević, Z.; Makarov, A.; Selberherr, S.

2012-05-01

We study the transport properties of the Datta-Das spin field-effect transistor built on InAs and Si. First, we demonstrate that the amplitude of the magnetoresistance oscillations as a function of the band mismatch between the ferromagnetic contacts and the semiconductor channel made of InAs decreases dramatically with increasing temperature. A shorter InAs channel is needed to create an InAs-based SpinFET which will operate at higher temperatures. Second, we show that the [1 0 0] orientation of the fin is preferable for silicon SpinFETs due to stronger modulation of the conductance as a function of spin-orbit interaction and magnetic field. Short silicon fins can be used for current modulation as a function of the conduction band mismatch between the channel and the ferromagnetic contacts only at relatively low temperatures. In contrast, longer silicon channels allow a TMR modulation at room temperature by changing the strength of the spin-orbit interaction through the gate bias.

Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD

Science.gov (United States)

Kakkerla, Ramesh Kumar; Anandan, Deepak; Hsiao, Chih-Jen; Yu, Hung Wei; Singh, Sankalp Kumar; Chang, Edward Yi

2018-05-01

We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the InAs and InAs/GaSb heterostructure nanowires (NWs) is investigated. Control over diameter and length of the InAs NWs and the GaSb shell thickness was achieved by using growth temperature. As the GaSb growth temperature increase, GaSb radial growth rate increases due to the increase in alkyl decomposition at the substrate surface. Diffusivity of the adatoms increases as the GaSb growth temperature increase which results in tapered GaSb shell growth. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed that the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core can be controlled by the growth temperature. This study demonstrates the control over InAs NWs growth and the GaSb shell thickness can be achieved through proper growth temperature control, such technique is essential for the growth of nanowire for future nano electronic devices, such as Tunnel FET.

Diffraction of love waves by two staggered perfectly weak half-planes

International Nuclear Information System (INIS)

Asghar, S.; Zaman, F.D.; Sajida Asghar

1989-01-01

Love wave travelling in a layer of uniform thickness overlying a half-space is assumed to be incident on two parallel but staggered perfectly weak half-planes lying in the upper layer. The diffracted fields is calculated using the modified Wiener-Hopf technique and contour integration method. The diffracted waves satisfy the dispersion relations appropriate to different regions formed by the perfectly weak half-planes

Self-assembly of palladium nanoparticles: Synthesis of nanobelts, nanoplates and nanotrees using vitamin B1 and their application in carbon-carbon coupling reactions

Science.gov (United States)

An environmentally friendly one-step method to synthesize palladium (Pd) nanobelts, nanoplates and nanotrees using vitamin B1 without using any special capping agents at room temperature is described. This greener method, which uses water as benign solvent and vitamin B1 as a red...

Cathodoluminescence imaging and spectroscopy of excited states in InAs self-assembled quantum dots

International Nuclear Information System (INIS)

Khatsevich, S.; Rich, D.H.; Kim, Eui-Tae; Madhukar, A.

2005-01-01

We have examined state filling and thermal activation of carriers in buried InAs self-assembled quantum dots (SAQDs) with excitation-dependent cathodoluminescence (CL) imaging and spectroscopy. The InAs SAQDs were formed during molecular-beam epitaxial growth of InAs on undoped planar GaAs (001). The intensities of the ground- and excited-state transitions were analyzed as a function of temperature and excitation density to study the thermal activation and reemission of carriers. The thermal activation energies associated with the thermal quenching of the luminescence were measured for ground- and excited-state transitions of the SAQDs, as a function of excitation density. By comparing these activation energies with the ground- and excited-state transition energies, we have considered various processes that describe the reemission of carriers. Thermal quenching of the intensity of the QD ground- and first excited-state transitions at low excitations in the ∼230-300-K temperature range is attributed to dissociation of excitons from the QD states into the InAs wetting layer. At high excitations, much lower activation energies of the ground and excited states are obtained, suggesting that thermal reemission of single holes from QD states into the GaAs matrix is responsible for the observed temperature dependence of the QD luminescence in the ∼230-300-K temperature range. The dependence of the CL intensity of the ground-and first excited-state transition on excitation density was shown to be linear at all temperatures at low-excitation density. This result can be understood by considering that carriers escape and are recaptured as excitons or correlated electron-hole pairs. At sufficiently high excitations, state-filling and spatial smearing effects are observed together with a sublinear dependence of the CL intensity on excitation. Successive filling of the ground and excited states in adjacent groups of QDs that possess different size distributions is assumed to

A Comparison of Numerical and Analytical Radiative-Transfer Solutions for Plane Albedo in Natural Waters

Science.gov (United States)

Several numerical and analytical solutions of the radiative transfer equation (RTE) for plane albedo were compared for solar light reflection by sea water. The study incorporated the simplest case, that being a semi-infinite one-dimensional plane-parallel absorbing and scattering...

Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires

International Nuclear Information System (INIS)

Lindgren, David; Kawaguchi, Kenichi; Heurlin, Magnus; Borgström, Magnus T; Pistol, Mats-Erik; Samuelson, Lars; Gustafsson, Anders

2013-01-01

Correlated micro-photoluminescence (μPL) and cathodoluminescence (CL) measurements are reported for single core–shell InP–InAs wurtzite nanowires grown using metal–organic vapor phase epitaxy. Samples covering a radial InAs shell thickness of 1–12 ML were investigated. The effective masses for the wurtzite material were determined from the transition energy dependence of the InAs shell thickness, using a model based on linear deformation potential theory. InP cores with segments of mixed zincblende and wurtzite, on which quantum dots nucleated selectively, were also investigated. Narrow peaks were observed by μPL and the spatial origin of the emission was identified with CL imaging. (paper)

STM/STS Measurements of Two-Dimensional Electronic States in Magnetic Fields at Epitaxially Grown InAs(111)A Surfaces

International Nuclear Information System (INIS)

Niimi, Y; Kanisawa, K; Kojima, H; Kambara, H; Hirayama, Y; Tarucha, S; Fukuyama, Hiroshi

2007-01-01

The local density of states (LDOS) at the epitaxially grown InAs surface on a GaAs substrate was studied at very low temperatures in magnetic fields up to 6 T by scanning tunneling microscopy and spectroscopy. We observed a series of peaks, associated with Landau quantization of the two-dimensional electron system (2DES), in the tunnel spectra just above the subband energy (-80 meV) of the 2DES. The intervals between the peaks are consistent with the estimation from the effective mass of the 2DES at the InAs surface. In a wider energy range, another type of oscillation which was independent of magnetic field was also observed. This oscillation can be explained by the energy dependence of the transmission probability of the tunneling current through the Schottky barrier formed at the interface between the InAs film and GaAs substrate

Intermediate band solar cell simulation use InAs quantum dot in GaAs

International Nuclear Information System (INIS)

Hendra P, I. B.; Rahayu, F.; Sahdan, M. F.; Darma, Y.

2015-01-01

Intermediate band solar cell (IBSC) has become a new approach in increasing solar cell efficiency significantly. One way to create intermediate band is by proposing quantum dots (QD) technology. One of the important aspects in utilizing IBSC is the absorption of light. In this work we simulated the influence of QD arrangement in order to increase absorption coefficient and solar cell efficiency. We also simulated the influence of QD size to capture a wider light spectrum. We present a simple calculation method with low computing power demand. Results show that the increasing in quantum dot size can increase in capturing wider spectrum of light. Arrangement InAs QD in bulk material GaAs can capture wider spectrum of light and increase the absorption coefficient. The arrangement InAs QD 2 nm in GaAs bulk can increase solar cell efficiency up to 49.68%

Progress in parallel implementation of the multilevel plane wave time domain algorithm

KAUST Repository

Liu, Yang; Bagci, Hakan; Michielssen, Eric

2013-01-01

The computational complexity and memory requirements of classical schemes for evaluating transient electromagnetic fields produced by Ns dipoles active for Nt time steps scale as O(NtN s 2) and O(Ns 2), respectively. The multilevel plane wave time

The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

International Nuclear Information System (INIS)

Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M

2006-01-01

The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

Time-resolved x-ray diffraction measurements of high-density InAs quantum dots on Sb/GaAs layers and the suppression of coalescence by Sb-irradiated growth interruption

International Nuclear Information System (INIS)

Kakuda, Naoki; Yamaguchi, Koichi; Kaizu, Toshiyuki; Takahasi, Masamitu; Fujikawa, Seiji

2010-01-01

Self-assembly of high-density InAs quantum dots (QDs) on Sb-irradiated GaAs buffer layers was observed in-situ by a time-resolved X-ray diffraction (XRD) technique using a combination of XRD and molecular beam epitaxy. Evolution of dot height and lattice constant was analyzed during InAs QD growth and subsequent growth interruption (GI), and as a result, dislocated giant dots due to coalescence and coherent dots were separately evaluated. An Sb-irradiated GI (Sb-GI) method to be applied after InAs growth was attempted for the suppression of coalescence. Using this method, the XRD intensity of giant dots decreased, and the photoluminescence intensity of InAs QDs was enhanced. High-density InAs QDs without giant dots were produced by using the combination of the QD growth on the Sb-irradiated GaAs buffer layers and the Sb-GI. (author)

Use of parallel counters for triggering

International Nuclear Information System (INIS)

Nikityuk, N.M.

1991-01-01

Results of investigation of using parallel counters, majority coincidence schemes, parallel compressors for triggering in multichannel high energy spectrometers are described. Concrete examples of methods of constructing fast and economic new devices used to determine multiplicity hits t>900 registered in a hodoscopic plane and a pixel detector are given. For this purpose the author uses the syndrome coding method and cellular arrays. In addition, an effective coding matrix has been created which can be used for light signal coding. For example, such signals are supplied from scintillators to photomultipliers. 23 refs.; 21 figs

Broadcasting a message in a parallel computer

Science.gov (United States)

Berg, Jeremy E [Rochester, MN; Faraj, Ahmad A [Rochester, MN

2011-08-02

Methods, systems, and products are disclosed for broadcasting a message in a parallel computer. The parallel computer includes a plurality of compute nodes connected together using a data communications network. The data communications network optimized for point to point data communications and is characterized by at least two dimensions. The compute nodes are organized into at least one operational group of compute nodes for collective parallel operations of the parallel computer. One compute node of the operational group assigned to be a logical root. Broadcasting a message in a parallel computer includes: establishing a Hamiltonian path along all of the compute nodes in at least one plane of the data communications network and in the operational group; and broadcasting, by the logical root to the remaining compute nodes, the logical root's message along the established Hamiltonian path.

New family of exact solutions for colliding plane gravitational waves

International Nuclear Information System (INIS)

Yurtsever, U.

1988-01-01

We construct an infinite-parameter family of exact solutions to the vacuum Einstein field equations describing colliding gravitational plane waves with parallel polarizations. The interaction regions of the solutions in this family are locally isometric to the interiors of those static axisymmetric (Weyl) black-hole solutions which admit both a nonsingular horizon, and an analytic extension of the exterior metric to the interior of the horizon. As a member of this family of solutions we also obtain, for the first time, a colliding plane-wave solution where both of the two incoming plane waves are purely anastigmatic, i.e., where both incoming waves have equal focal lengths

Development of a new dynamic turbulent model, applications to two-dimensional and plane parallel flows

International Nuclear Information System (INIS)

Laval, Jean Philippe

1999-01-01

We developed a turbulent model based on asymptotic development of the Navier-Stokes equations within the hypothesis of non-local interactions at small scales. This model provides expressions of the turbulent Reynolds sub-grid stresses via estimates of the sub-grid velocities rather than velocities correlations as is usually done. The model involves the coupling of two dynamical equations: one for the resolved scales of motions, which depends upon the Reynolds stresses generated by the sub-grid motions, and one for the sub-grid scales of motions, which can be used to compute the sub-grid Reynolds stresses. The non-locality of interaction at sub-grid scales allows to model their evolution with a linear inhomogeneous equation where the forcing occurs via the energy cascade from resolved to sub-grid scales. This model was solved using a decomposition of sub-grid scales on Gabor's modes and implemented numerically in 2D with periodic boundary conditions. A particles method (PIC) was used to compute the sub-grid scales. The results were compared with results of direct simulations for several typical flows. The model was also applied to plane parallel flows. An analytical study of the equations allows a description of mean velocity profiles in agreement with experimental results and theoretical results based on the symmetries of the Navier-Stokes equation. Possible applications and improvements of the model are discussed in the conclusion. (author) [fr

Nonlinear refraction at the absorption edge in InAs.

Science.gov (United States)

Poole, C D; Garmire, E

1984-08-01

The results of measurements of nonlinear refraction at the absorption edge in InAs between 68 and 90 K taken with an HF laser are compared with those of a band-gap resonant model in which the contribution of the light-hole band is included and found to account for more than 40% of the observed nonlinear refraction. A generalized expression for the nonlinear index is derived by using the complete Fermi-Dirac distribution function. Good agreement between theory and experiment is obtained, with no free parameters.

Quantification of Discrete Oxide and Sulfur Layers on Sulfur-Passivated InAs by XPS

National Research Council Canada - National Science Library

Petrovykh, D. Y; Sullivan, J. M; Whitman, L. J

2005-01-01

.... The S-passivated InAs(001) surface can be modeled as a sulfur-indium-arsenic layer-cake structure, such that characterization requires quantification of both arsenic oxide and sulfur layers that are at most a few monolayers thick...

High tunability and superluminescence in InAs mid-infrared light emitting diodes

International Nuclear Information System (INIS)

Sherstnev, V.V.; Krier, A.; Hill, G.

2002-01-01

We report on the observation of super luminescence and high spectral current tunability (181 nm) of InAs light emitting diodes operating at 3.0 μm. The source is based on an optical whispering gallery mode which is generated near the edges of the mesa and which is responsible for the superluminescence. (author)

Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

Science.gov (United States)

Fülöp, G.; d'Hollosy, S.; Hofstetter, L.; Baumgartner, A.; Nygård, J.; Schönenberger, C.; Csonka, S.

2016-05-01

Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, indium arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only a few techniques have been developed to tailor individual NWs after growth. Here we present three wet chemical etch methods for the post-growth morphological engineering of InAs NWs on the sub-100 nm scale. The first two methods allow the formation of self-aligned electrical contacts to etched NWs, while the third method results in conical shaped NW profiles ideal for creating smooth electrical potential gradients and shallow barriers. Low temperature experiments show that NWs with etched segments have stable transport characteristics and can serve as building blocks of quantum electronic devices. As an example we report the formation of a single electrically stable quantum dot between two etched NW segments.

Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

Science.gov (United States)

Karatsori, T. A.; Pastorek, M.; Theodorou, C. G.; Fadjie, A.; Wichmann, N.; Desplanque, L.; Wallart, X.; Bollaert, S.; Dimitriadis, C. A.; Ghibaudo, G.

2018-05-01

A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.

Surface morphology and electronic structure of halogen etched InAs (1 1 1)

Energy Technology Data Exchange (ETDEWEB)

Eassa, N., E-mail: nashwa.eassa@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Murape, D.M. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Betz, R. [Department of Chemistry, Nelson Mandela Metropolitan University (South Africa); Neethling, J.H.; Venter, A.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

2012-05-15

The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H{sub 2}O, Br-methanol and I-ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {l_brace}1 1 1{r_brace} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.

Surface morphology and electronic structure of halogen etched InAs (1 1 1)

International Nuclear Information System (INIS)

Eassa, N.; Murape, D.M.; Betz, R.; Neethling, J.H.; Venter, A.; Botha, J.R.

2012-01-01

The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H 2 O, Br–methanol and I–ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {1 1 1} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.

Reconstruction of an InAs nanowire using geometric and algebraic tomography

International Nuclear Information System (INIS)

Pennington, R S; Boothroyd, C B; König, S; Alpers, A; Dunin-Borkowski, R E

2011-01-01

Geometric tomography and conventional algebraic tomography algorithms are used to reconstruct cross-sections of an InAs nanowire from a tilt series of experimental annular dark-field images. Both algorithms are also applied to a test object to assess what factors affect the reconstruction quality. When using the present algorithms, geometric tomography is faster, but artifacts in the reconstruction may be difficult to recognize.

Reconstruction of an InAs nanowire using geometric and algebraic tomography

DEFF Research Database (Denmark)

Pennington, Robert S.; König, S.; Alpers, A.

2011-01-01

Geometric tomography and conventional algebraic tomography algorithms are used to reconstruct cross-sections of an InAs nanowire from a tilt series of experimental annular dark-field images. Both algorithms are also applied to a test object to assess what factors affect the reconstruction quality....... When using the present algorithms, geometric tomography is faster, but artifacts in the reconstruction may be difficult to recognize....

Combinatorics of spreads and parallelisms

CERN Document Server

Johnson, Norman

2010-01-01

Partitions of Vector Spaces Quasi-Subgeometry Partitions Finite Focal-SpreadsGeneralizing André SpreadsThe Going Up Construction for Focal-SpreadsSubgeometry Partitions Subgeometry and Quasi-Subgeometry Partitions Subgeometries from Focal-SpreadsExtended André SubgeometriesKantor's Flag-Transitive DesignsMaximal Additive Partial SpreadsSubplane Covered Nets and Baer Groups Partial Desarguesian t-Parallelisms Direct Products of Affine PlanesJha-Johnson SL(2,

Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

KAUST Repository

Rota, Michele B.

2017-07-12

One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.

Arsenic flux dependence of island nucleation on InAs(001)

International Nuclear Information System (INIS)

Grosse, Frank; Barvosa-Carter, William; Zinck, Jenna; Wheeler, Matthew; Gyure, Mark F.

2002-01-01

The initial stages of InAs(001) homoepitaxial growth are investigated using a combination of kinetic Monte Carlo simulations based on ab initio density functional theory and scanning tunneling microscopy. In the two dimensional island nucleation mode investigated, the island number density is found to decrease with increasing As. This behavior is explained by a suppression of the effective In-adatom density leading to a reduction in island nucleation. The relevant microscopic processes responsible for this reduction are identified

Growth and characterization of InAs columnar quantum dots on GaAs substrate

International Nuclear Information System (INIS)

Li, L. H.; Patriarche, G.; Rossetti, M.; Fiore, A.

2007-01-01

The growth of InAs columnar quantum dots (CQDs) on GaAs substrates by molecular beam epitaxy was investigated. The CQDs were formed by depositing a 1.8 monolayer (ML) InAs seed dot layer and a short period GaAs/InAs superlattice (SL). It was found that the growth of the CQDs is very sensitive to growth interruption (GI) and growth temperature. Both longer GI and higher growth temperature impact the size dispersion of the CQDs, which causes the broadening of photoluminescence (PL) spectrum and the presence of the additional PL peak tails. By properly choosing the GI and the growth temperature, CQDs including GaAs (3 ML)/InAs (0.62 ML) SL with period number up to 35 without plastic relaxation were grown. The corresponding equivalent thickness of the SL is 41 nm which is two times higher than the theoretical critical thickness of the strained InGaAs layer with the same average In composition of 16%. The increase of the critical thickness is partially associated with the formation of the CQDs. Based on a five-stack CQD active region, laser diodes emitting around 1120 nm at room temperature were demonstrated, indicating a high material quality. CQDs with nearly isotropic cross section (20 nmx20 nm dimensions) were formed by depositing a 16-period GaAs (3 ML)/InAs (0.62 ML) SL on an InAs seed dot layer, indicating the feasibility of artificial shape engineering of QDs. Such a structure is expected to be very promising for polarization insensitive device applications, such as semiconductor optical amplifiers

Cathode fall thickness of abnormal glow discharges between parallel-plane electrodes in different radii at low pressure

Energy Technology Data Exchange (ETDEWEB)

Fu, Yangyang; Luo, Haiyun; Zou, Xiaobing; Wang, Xinxin, E-mail: wangxx@tsinghua.edu.cn [Department of Electrical Engineering, Tsinghua University, Beijing 100084 (China)

2015-02-15

In order to investigate the influence of electrode radius on the characteristics of cathode fall thickness, experiments of low-pressure (20 Pa ≤ p ≤ 30 Pa) abnormal glow discharge were carried out between parallel-plane electrodes in different radii keeping gap distance unchanged. Axial distributions of light intensity were obtained from the discharge images captured using a Charge Coupled Device camera. The assumption that the position of the negative glow peak coincides with the edge of cathode fall layer was verified based on a two-dimensional model, and the cathode fall thicknesses, d{sub c}, were calculated from the axial distributions of light intensity. It was observed that the position of peak emission shifts closer to the cathode as current or pressure grows. The dependence of cathode fall thickness on the gas pressure and normalized current J/p{sup 2} was presented, and it was found that for discharges between electrodes in large radius the curves of pd{sub c} against J/p{sup 2} were superimposed on each other, however, this phenomenon will not hold for discharges between the smaller electrodes. The reason for this phenomenon is that the transverse diffusions of charged particles are not the same in two gaps between electrodes with different radii.

Direct evidence of strain transfer for InAs island growth on compliant Si substrates

Energy Technology Data Exchange (ETDEWEB)

Marçal, L. A. B.; Magalhães-Paniago, R.; Malachias, Angelo, E-mail: angeloms@fisica.ufmg.br [Universidade Federal de Minas Gerais, Av. Antonio Carlos 6627, CEP 31270-901, Belo Horizonte (Brazil); Richard, M.-I. [European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France); Aix-Marseille University, IM2NP-CNRS, Faculté des Sciences de St Jérôme, 13397 Marseille (France); Cavallo, F. [Center for High Technology Materials, University of New Mexico, 1313 Goddard St., Albuquerque, New Mexico 87106 (United States); University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States); Lagally, M. G. [University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW-Dresden, D-01171 Dresden (Germany); Schülli, T. Ü. [European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France); Deneke, Ch. [Laboratório Nacional de Nanotecnologia (LNNano/CNPEM), C.P. 6192, CEP 13083-970, Campinas (Brazil)

2015-04-13

Semiconductor heteroepitaxy on top of thin compliant layers has been explored as a path to make inorganic electronics mechanically flexible as well as to integrate materials that cannot be grown directly on rigid substrates. Here, we show direct evidences of strain transfer for InAs islands on freestanding Si thin films (7 nm). Synchrotron X-ray diffraction measurements using a beam size of 300 × 700 nm{sup 2} can directly probe the strain status of the compliant substrate underneath deposited islands. Using a recently developed diffraction mapping technique, three-dimensional reciprocal space maps were reconstructed around the Si (004) peak for specific illuminated positions of the sample. The strain retrieved was analyzed using continuous elasticity theory via Finite-element simulations. The comparison of experiment and simulations yields the amount of strain from the InAs islands, which is transferred to the compliant Si thin film.

Functional display of ice nucleation protein InaZ on the surface of bacterial ghosts.

Science.gov (United States)

Kassmannhuber, Johannes; Rauscher, Mascha; Schöner, Lea; Witte, Angela; Lubitz, Werner

2017-09-03

In a concept study the ability to induce heterogeneous ice formation by Bacterial Ghosts (BGs) from Escherichia coli carrying ice nucleation protein InaZ from Pseudomonas syringae in their outer membrane was investigated by a droplet-freezing assay of ultra-pure water. As determined by the median freezing temperature and cumulative ice nucleation spectra it could be demonstrated that both the living recombinant E. coli and their corresponding BGs functionally display InaZ on their surface. Under the production conditions chosen both samples belong to type II ice-nucleation particles inducing ice formation at a temperature range of between -5.6 °C and -6.7 °C, respectively. One advantage for the application of such BGs over their living recombinant mother bacteria is that they are non-living native cell envelopes retaining the biophysical properties of ice nucleation and do no longer represent genetically modified organisms (GMOs).

Shubnikov-de Haas effect study of InAs after transmutation doping at low temperatures

International Nuclear Information System (INIS)

Gerstenberg, H.; Mueller, P.

1990-01-01

Degenerate InAs single crystals have been irradiated by thermal neutrons below 6 K. The Shubnikov-de Haas effect and the electrical resistivity have been measured as a function of the neutron dose and the annealing temperature. The effects of transmutation doping and simultaneous introduction of lattice defects have been analysed in terms of the conduction electron density and the scattering rates τ ρ -1 - ρne 2 /m * and τ x -1 2πkub(B)X/h/2π (where X is the Dingle temperature). The measured conduction electron density after irradiation and thermal annealing agreed well with the values calculated from the experimental and materials parameters. The effects of radiation damage may qualitatively be explained assuming neutral In vacancies to be the most common type of defect in thermal-neutron-irradiated InAs. A comparison with similar experiments on InSb is given. (author)

Enhanced emission of high-energy photons perpendicular to the reaction plane in α+Th reactions

International Nuclear Information System (INIS)

Tegner, P.; Marianski, B.; Morsch, H.P.; Rogge, M.; Bargholtz, C.; Decowski, P.; Zemlo, L.

1991-01-01

High-energy photon and neutron emission has been measured in coincidence with fission fragments in α+ 232 Th reactions at 170 MeV. From measurements parallel and perpendicular to the fission plane, anisotropies relative to the reaction plane were determined. The in-plane/out-of-plane intensity ratio is 0.72(7) for photons with energies above 20 MeV and 11(3) for neutrons at 35 MeV. The result for high-energy photons can be explained by nucleon-nucleon bremsstrahlung if the initial flow of nucleons has a correlation to the reaction plane similar to the one observed for fast neutrons

Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001)

International Nuclear Information System (INIS)

Zhao, Z.M.; Hul'ko, O.; Kim, H.J.; Liu, J.; Shi, B.; Xie, Y.H.

2005-01-01

InAs self-assembled quantum dots (QDs) were grown on Si (001) substrates via molecular beam epitaxy. The size distribution and density of InAs QDs grown under different conditions were studied using plan-view transmission electron microscopy. Dot density was shown to strongly depend on arsenic beam equivalent pressure (BEP) ranging from 2.8x10 -5 to 1.2x10 -3 Pa. In contrast, dot density was nearly independent of substrate temperature from 295 to 410 deg. C under constant arsenic BEP, while broadening of size distribution was observed with increasing temperature. The mechanism accounting for some of the main features of the experimental observations is discussed. Finally, InAs quantum dots with optimized narrow size distribution and high density were grown at low arsenic BEP of 7.2 x10 -5 Pa and low temperature of 250 deg. C followed by annealing at arsenic BEP of 1.9 x10 -4 Pa and temperature of 410 deg. C

Supercurrent through a spin-split quasi-ballistic point contact in an InAs nanowire

DEFF Research Database (Denmark)

Saldaña, J. C. Estrada; Žitko, R.; Cleuziou, J. P.

2018-01-01

We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe...

Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells.

Science.gov (United States)

Yu, Jinling; Zeng, Xiaolin; Cheng, Shuying; Chen, Yonghai; Liu, Yu; Lai, Yunfeng; Zheng, Qiao; Ren, Jun

2016-12-01

The ratio of Rashba and Dresselhaus spin splittings of the (001)-grown GaAs/AlGaAs quantum wells (QWs), investigated by the spin photocurrent spectra induced by circular photogalvanic effect (CPGE) at inter-band excitation, has been effectively tuned by changing the well width of QWs and by inserting a one-monolayer-thick InAs layer at interfaces of GaAs/AlGaAs QWs. Reflectance difference spectroscopy (RDS) is also employed to study the interface asymmetry of the QWs, whose results are in good agreement with that obtained by CPGE measurements. It is demonstrated that the inserted ultra-thin InAs layers will not only introduce structure inversion asymmetry (SIA), but also result in additional interface inversion asymmetry (IIA), whose effect is much stronger in QWs with smaller well width. It is also found that the inserted InAs layer brings in larger SIA than IIA. The origins of the additional SIA and IIA introduced by the inserted ultra-thin InAs layer have been discussed.

Comparison between mini mental state examination (MMSE) and Montreal cognitive assessment Indonesian version (MoCA-Ina) as an early detection of cognitive impairments in post-stroke patients

Science.gov (United States)

Lestari, S.; Mistivani, I.; Rumende, C. M.; Kusumaningsih, W.

2017-08-01

Mild cognitive impairment (MCI) is defined as cognitive impairment that may never develop into dementia. Cognitive impairment is one long-term complication of a stroke. The Mini Mental State Examination (MMSE), which is commonly used as a screening tool for cognitive impairment, has a low sensitivity to detect cognitive impairment, especially MCI. Alternatively, the Montreal Cognitive Assessment Indonesian version (MoCA-Ina) has been reported to have a higher sensitivity than the MMSE. The aim of this study was to compare the proportion of MCI identified between the MMSE and MoCA-Ina in stroke patients. This was a cross-sectional study of stroke outpatients who attended the Polyclinic Neuromuscular Division, Rehabilitation Department, and Polyclinic Stroke, Neurology Department Cipto Mangunkusumo General Hospital, Jakarta. The proportion of MCI identified using the MMSE was 31.03% compared to 72.41% when using the MoCA-Ina. This difference was statistically significant (Fisher’s exact test, p = 0.033). The proportion of MCI in stroke patients was higher when using the MoCA-Ina compared to the MMSE. The MoCA-Ina should be used as an alternative in the early detection of MCI in stroke patients, especially those undergoing rehabilitation.

Three-dimensional temporally resolved measurements of turbulence-flame interactions using orthogonal-plane cinema-stereoscopic PIV

Energy Technology Data Exchange (ETDEWEB)

Steinberg, Adam Michael; Driscoll, James F. [University of Michigan, Department of Aerospace Engineering, Ann Arbor, MI (United States); Ceccio, Steven L. [University of Michigan, Department of Mechanical Engineering, Ann Arbor, MI (United States)

2009-09-15

A new orthogonal-plane cinema-stereoscopic particle image velocimetry (OPCS-PIV) diagnostic has been used to measure the dynamics of three-dimensional turbulence-flame interactions. The diagnostic employed two orthogonal PIV planes, with one aligned perpendicular and one aligned parallel to the streamwise flow direction. In the plane normal to the flow, temporally resolved slices of the nine-component velocity gradient tensor were determined using Taylor's hypothesis. Volumetric reconstruction of the 3D turbulence was performed using these slices. The PIV plane parallel to the streamwise flow direction was then used to measure the evolution of the turbulence; the path and strength of 3D turbulent structures as they interacted with the flame were determined from their image in this second plane. Structures of both vorticity and strain-rate magnitude were extracted from the flow. The geometry of these structures agreed well with predictions from direct numerical simulations. The interaction of turbulent structures with the flame also was observed. In three dimensions, these interactions had complex geometries that could not be reflected in either planar measurements or simple flame-vortex configurations. (orig.)

Contactless electroreflectance and photoluminescence of InAs quantum dots with GaInNAs barriers grown on GaAs substrate

International Nuclear Information System (INIS)

Motyka, M.; Kudrawiec, R.; Misiewicz, J.; Pucicki, D.; Tlaczala, M.; Fischer, M.; Marquardt, B.; Forchel, A.

2007-01-01

InAs quantum dots (QDs) with GaInNAs barriers grown on (001) GaAs substrate by molecular beam epitaxy have been studied by contactless electroreflectance (CER) and photoluminescence (PL) spectroscopies. It has been observed that the overgrowth of self-organized InAs QDs with GaInNAs layers effectively tunes the QD emission to the 1.3 μm spectral region. In case of PL spectra only one peak related to QD emission has been observed. In the case of CER spectra, in addition to a CER feature corresponding to the QD ground state, a rich spectrum of CER resonances related to optical transitions in InAs/GaInNAs/GaAs QW has been observed. It has been concluded that the application of GaInNAs instead InGaAs leads to better control of emission wavelength from InAs QDs since strains in GaInNAs can be tuned from compressive to tensile. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition

Science.gov (United States)

Colocci, M.; Bogani, F.; Carraresi, L.; Mattolini, R.; Bosacchi, A.; Franchi, S.; Frigeri, P.; Rosa-Clot, M.; Taddei, S.

1997-06-01

Self-assembled InAs quantum dots have been grown by molecular beam epitaxy in such a way as to obtain a continuous variation of InAs coverages across the wafer. Structured photoluminescence spectra are observed after excitation of a large number of dots; deconvolution into Gaussian components yields narrow emission bands (full width at half-maximum 20-30 meV) separated in energy by an average spacing of 30-40 meV. We ascribe the individual bands of the photoluminescence spectra after low excitation to families of dots with similar shapes and with heights differing by one monolayer, as strongly supported by numerical calculations of the fundamental electronic transitions in quantum dot structures.

Parallelization of Droplet Microfluidic Systems for the Sustainable Production of Micro-Reactors at Industrial Scale

KAUST Repository

Conchouso Gonzalez, David

2017-01-01

fluid mechanics and limitations on the manufacturing capacity have constrained these works to explore only in-plane parallelization. This thesis investigates a three-dimensional parallelization by proposing a microfluidic system that is comprised of a

In situ surface and interface study of crystalline (3×1)-O on InAs

Energy Technology Data Exchange (ETDEWEB)

Qin, Xiaoye, E-mail: xxq102020@utdallas.edu; Wallace, Robert M., E-mail: rmwallace@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Wang, Wei-E.; Rodder, Mark S. [Advanced Logic Lab, Samsung Semiconductor, Inc., Austin, Texas 78754 (United States)

2016-07-25

The oxidation behavior of de-capped InAs (100) exposed to O{sub 2} gas at different temperatures is investigated in situ with high resolution of monochromatic x-ray photoelectron spectroscopy and low energy electron diffraction. The oxide chemical states and structure change dramatically with the substrate temperature. A (3 × 1) crystalline oxide layer on InAs is generated in a temperature range of 290–330 °C with a coexistence of In{sub 2}O and As{sub 2}O{sub 3}. The stability of the crystalline oxide upon the atomic layer deposition (ALD) of HfO{sub 2} is studied as well. It is found that the generated (3 × 1) crystalline oxide is stable upon ALD HfO{sub 2} growth at 100 °C.

Flow of Dense Granular Suspensions on an Inclined Plane

Science.gov (United States)

Bonnoit, C.; Lanuza, J.; Lindner, A.; Clément, E.

2008-07-01

We investigate the flow behavior of dense granular suspensions, by the use of an inclined plane. The suspensions are prepared at high packing fractions and consist of spherical non-Brownian particles density matched with the suspending fluid. On the inclined plane, we perform a systematic study of the surface velocity as a function of the layer thickness for various flow rates and tilt angles. We perform measurements on a classical rheometer (parallel-plate rheometer) that is shown to be in good agreement with existing models, up to a volume fraction of 50%. Comparing these results, we show that the flow on an inclined plane can, up to a volume fraction of 50%, indeed be described by a purely viscous model in agreement with the results from classical rheometry.

High-speed parallel counter

International Nuclear Information System (INIS)

Gus'kov, B.N.; Kalinnikov, V.A.; Krastev, V.R.; Maksimov, A.N.; Nikityuk, N.M.

1985-01-01

This paper describes a high-speed parallel counter that contains 31 inputs and 15 outputs and is implemented by integrated circuits of series 500. The counter is designed for fast sampling of events according to the number of particles that pass simultaneously through the hodoscopic plane of the detector. The minimum delay of the output signals relative to the input is 43 nsec. The duration of the output signals can be varied from 75 to 120 nsec

Transport and performance of a gate all around InAs nanowire transistor

International Nuclear Information System (INIS)

Alam, Khairul

2009-01-01

The transport physics and performance metrics of a gate all around an InAs nanowire transistor are studied using a three-dimensional quantum simulation. The transistor action of an InAs nanowire transistor occurs by modulating the transmission coefficient of the device. This action is different from a conventional metal-oxide-semiconductor field effect transistor, where the transistor action occurs by modulating the charge in the channel. The device has 82% tunneling current in the off-state and 81% thermal current in the on-state. The two current components become equal at a gate bias at which an approximate source-channel flat-band condition is achieved. Prior to this gate bias, the tunneling current dominates and the thermal current dominates beyond it. The device has an on/off current ratio of 7.84 × 10 5 and an inverse subthreshold slope of 63 mV dec −1 . The transistor operates in the quantum capacitance limit with a normalized transconductance value of 14.43 mS µm −1 , an intrinsic switching delay of 90.1675 fs, and an intrinsic unity current gain frequency of 6.8697 THz

Study of electron transport in n-type InAs substrate by Monte Carlo ...

African Journals Online (AJOL)

It is therefore an iterative process made up from a whole coasting flights stopped by acoustics interactions, polar and non polar optics, piezoelectric, inter-valley, impurity, ionization and surface. By applying this method to the III-V material, case of InAs, we have described the behavior of the carriers from dynamic and ...

Parallel ray tracing for one-dimensional discrete ordinate computations

International Nuclear Information System (INIS)

Jarvis, R.D.; Nelson, P.

1996-01-01

The ray-tracing sweep in discrete-ordinates, spatially discrete numerical approximation methods applied to the linear, steady-state, plane-parallel, mono-energetic, azimuthally symmetric, neutral-particle transport equation can be reduced to a parallel prefix computation. In so doing, the often severe penalty in convergence rate of the source iteration, suffered by most current parallel algorithms using spatial domain decomposition, can be avoided while attaining parallelism in the spatial domain to whatever extent desired. In addition, the reduction implies parallel algorithm complexity limits for the ray-tracing sweep. The reduction applies to all closed, linear, one-cell functional (CLOF) spatial approximation methods, which encompasses most in current popular use. Scalability test results of an implementation of the algorithm on a 64-node nCube-2S hypercube-connected, message-passing, multi-computer are described. (author)

Homogeneous Ir-192 afterloading-flab-irradiation of plane surfaces

International Nuclear Information System (INIS)

Bratengeier, K.; Krieger, T.

2002-01-01

Homogeneous irradiation of plane targets bt Ir-192 afterloading flabs made by a parallel series of linear applicators can be time-consuming even with modern planning systems. The aim of the present study was to develop an algorithm that supplies homogeneous dose distributions in an arbitrary given plane in parallel to the equipped plane of a flab. The edge and corner positions of the flab are of particular importance. The identity of the dose in the optimisation distance above the flab centre, corners, and middle of the flab edges, leads to a strict relation of the respective dwell weights. Formulas can be derived that allow the calculation of the dwell times. The dimensioning of the flab can be rapidly adapted to new conditions. A comparison with the results of Nucletron PLATO-BPS for applicator-applicator distances and step sizes of 1 cm at optimisation distances of 10, 20, 30, and 40 mm and various flab sizes (3 x 3, 9 x 9, and 15 x 15 cm 2 ) shows the following results: The standard deviation of the proposed algorithm is sometimes slightly higher than the results of the commercial planning system, whereas the underdosage at the flab edges is usually smaller. The effort for planning and preparation of the irradiation, for example using a Nucletron HDR, is below 5 minutes - a considerable reduction of planning time. (orig.) [de

ODNOS ZAPOSLENIH V VRTCU DO ZDRAVEGA NAČINA ŽIVLJENJA

OpenAIRE

Cesarec, Anja

2009-01-01

Diplomsko delo predstavlja temo odnos zaposlenih v vrtcu do zdravega načina življenja. Predstavili smo zdravje, dejavnike, ki vplivajo na stopnjo zdravja in dejavnike, ki vplivajo na življenjski slog, kot so kajenje tobaka, način prehranjevanja, telesno aktivnost, uživanje nedovoljenih drog in alkohola ter stres. Posebno poglavje pa je namenjeno skrbi za zdrav način življenja. V empiričnem delu so predstavljeni rezultati raziskave, narejene v vrtcu Rogaška Slatina, enota Izvir. V raziskavo, k...

Self-Assembled InAs Nanowires as Optical Reflectors

Directory of Open Access Journals (Sweden)

Francesco Floris

2017-11-01

Full Text Available Subwavelength nanostructured surfaces are realized with self-assembled vertically-aligned InAs nanowires, and their functionalities as optical reflectors are investigated. In our system, polarization-resolved specular reflectance displays strong modulations as a function of incident photon energy and angle. An effective-medium model allows one to rationalize the experimental findings in the long wavelength regime, whereas numerical simulations fully reproduce the experimental outcomes in the entire frequency range. The impact of the refractive index of the medium surrounding the nanostructure assembly on the reflectance was estimated. In view of the present results, sensing schemes compatible with microfluidic technologies and routes to innovative nanowire-based optical elements are discussed.

Spatial judgments in the horizontal and vertical planes from different vantage points.

Science.gov (United States)

Prytz, Erik; Scerbo, Mark W

2012-01-01

Todorović (2008 Perception 37 106-125) reported that there are systematic errors in the perception of 3-D space when viewing 2-D linear perspective drawings depending on the observer's vantage point. Because these findings were restricted to the horizontal plane, the current study was designed to determine the nature of these errors in the vertical plane. Participants viewed an image containing multiple colonnades aligned on parallel converging lines receding to a vanishing point. They were asked to judge where, in the physical room, the next column should be placed. The results support Todorović in that systematic deviations in the spatial judgments depended on vantage point for both the horizontal and vertical planes. However, there are also marked differences between the two planes. While judgments in both planes failed to compensate adequately for the vantage-point shift, the vertical plane induced greater distortions of the stimulus image itself within each vantage point.

Numerical modelling of orthogonal cutting: application to woodworking with a bench plane

OpenAIRE

Nairn, John A.

2016-01-01

A numerical model for orthogonal cutting using the material point method was applied to woodcutting using a bench plane. The cutting process was modelled by accounting for surface energy associated with wood fracture toughness for crack growth parallel to the grain. By using damping to deal with dynamic crack propagation and modelling all contact between wood and the plane, simulations could initiate chip formation and proceed into steady-state chip propagation including chip curling. Once st...

Focal plane detector for QDD spectrography in Institute of Nuclear Study and detector for SMART 2nd focal plane in RIKEN

Energy Technology Data Exchange (ETDEWEB)

Fuchi, Yoshihide [Tokyo Univ., Tanashi (Japan). Inst. for Nuclear Study

1996-09-01

The focal plane detector for QDD spectrography in Institute of Nuclear Study was composed of drift space and a proportional counter tube, and the latter is composed of position detector and two delta E detector for recognizing the particles. In this detector, a uniform parallel electric field can be obtained by placing a guard plate at the same height as that of a drift plate outer place of the detector. On the other hand, the detector for SMART 2nd focal plate in RIKEN is composed of drift space and a single wire proportional counter, and has two cathode read out single wire drift counters set so as to hold the focal plane. (G.K.)

Nonpolar ZnO film growth and mechanism for anisotropic in-plane strain relaxation

International Nuclear Information System (INIS)

Pant, P.; Budai, J.D.; Narayan, J.

2010-01-01

Using high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction, we investigated the strain relaxation mechanisms for nonpolar (1 1 -2 0) a-plane ZnO epitaxy on (1 -1 0 2) r-plane sapphire, where the in-plane misfit ranges from -1.5% for the [0 0 0 1]ZnO-parallel [1 -1 0 -1]sapphire to -18.3% for the [-1 1 0 0]ZnO-parallel [-1 -1 2 0]sapphire direction. For the large misfit [-1 1 0 0]ZnO direction the misfit strains are fully relaxed at the growth temperature, and only thermal misfit and defect strains, which cannot be relaxed fully by slip dislocations, remain on cooling. For the small misfit direction, lattice misfit is not fully relaxed at the growth temperature. As a result, additive unrelaxed lattice and thermal misfit and defect strains contribute to the measured strain. Our X-ray diffraction measurements of lattice parameters show that the anisotropic in-plane biaxial strain leads to a distortion of the hexagonal symmetry of the ZnO basal plane. Based on the anisotropic strain relaxation observed along the orthogonal in-plane [-1 1 0 0] and [0 0 0 1]ZnO stress directions and our HRTEM investigations of the interface, we show that the plastic relaxation occurring in the small misfit direction [0 0 0 1]ZnO by dislocation nucleation is incomplete. These results are consistent with the domain-matching paradigm of a complete strain relaxation for large misfits and a difficulty in relaxing the film strain for small misfits.

Controlling the size of InAs quantum dots on Si1-xGex/Si(0 0 1) by metalorganic vapor-phase epitaxy

International Nuclear Information System (INIS)

Kawaguchi, Kenichi; Ebe, Hiroji; Ekawa, Mitsuru; Sugama, Akio; Arakawa, Yasuhiko

2009-01-01

The formation of III-V InAs quantum dots (QDs) on group-IV Si 1-x Ge x /Si(0 0 1) was investigated by metalorganic vapor-phase epitaxy. Two types of QDs, round-shaped QDs and giant QDs elongated in the [1 1 0] or [1,-1,0] direction, were observed in a growth condition of low V/III ratios. An increase in the V/III ratio and AsH 3 preflow during the cooling process was found to suppress the formation of giant QDs. It was considered that replacing the H-stabilized SiGe surface with the As-stabilized surface was necessary for increasing the QD nucleation. The size and density of InAs QDs on SiGe were controllable as well as that on III-V semiconductor buffer layers, and InAs QDs with a density as high as 5 x 10 10 cm -2 were obtained.

Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(1 1 1)A surfaces

Energy Technology Data Exchange (ETDEWEB)

Kesler, V.G., E-mail: kesler@isp.nsc.ru [Institute of Semiconductor Physics SB RAS, Lavrentiev av., 13, Novosibirsk 630090 (Russian Federation); Seleznev, V.A.; Kovchavtsev, A.P.; Guzev, A.A. [Institute of Semiconductor Physics SB RAS, Lavrentiev av., 13, Novosibirsk 630090 (Russian Federation)

2010-05-01

X-ray photoelectron spectroscopy and atomic force microscopy were used to examine the chemical composition and surface morphology of InAs(1 1 1)A surface chemically etched in isopropanol-hydrochloric acid solution (HCl-iPA) and subsequently annealed in vacuum in the temperature range 200-500 deg. C. Etching for 2-30 min resulted in the formation of 'pits' and 'hillocks' on the sample surface, respectively 1-2 nm deep and high, with lateral dimensions 50-100 nm. The observed local formations, whose density was up to 3 x 10{sup 8} cm{sup -2}, entirely vanished from the surface after the samples were vacuum-annealed at temperatures above 300 deg. C. Using a direct method, electron beam microanalysis, we have determined that the defects of the hillock type includes oxygen and excessive As, while the 'pits' proved to be identical in their chemical composition to InAs. Vacuum anneals were found to cause a decrease in As surface concentration relative to In on InAs surface, with a concomitant rise of surface recombination rate.

Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(1 1 1)A surfaces

Science.gov (United States)

Kesler, V. G.; Seleznev, V. A.; Kovchavtsev, A. P.; Guzev, A. A.

2010-05-01

X-ray photoelectron spectroscopy and atomic force microscopy were used to examine the chemical composition and surface morphology of InAs(1 1 1)A surface chemically etched in isopropanol-hydrochloric acid solution (HCl-iPA) and subsequently annealed in vacuum in the temperature range 200-500 °C. Etching for 2-30 min resulted in the formation of "pits" and "hillocks" on the sample surface, respectively 1-2 nm deep and high, with lateral dimensions 50-100 nm. The observed local formations, whose density was up to 3 × 10 8 cm -2, entirely vanished from the surface after the samples were vacuum-annealed at temperatures above 300 °C. Using a direct method, electron beam microanalysis, we have determined that the defects of the hillock type includes oxygen and excessive As, while the "pits" proved to be identical in their chemical composition to InAs. Vacuum anneals were found to cause a decrease in As surface concentration relative to In on InAs surface, with a concomitant rise of surface recombination rate.

Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(1 1 1)A surfaces

International Nuclear Information System (INIS)

Kesler, V.G.; Seleznev, V.A.; Kovchavtsev, A.P.; Guzev, A.A.

2010-01-01

X-ray photoelectron spectroscopy and atomic force microscopy were used to examine the chemical composition and surface morphology of InAs(1 1 1)A surface chemically etched in isopropanol-hydrochloric acid solution (HCl-iPA) and subsequently annealed in vacuum in the temperature range 200-500 deg. C. Etching for 2-30 min resulted in the formation of 'pits' and 'hillocks' on the sample surface, respectively 1-2 nm deep and high, with lateral dimensions 50-100 nm. The observed local formations, whose density was up to 3 x 10 8 cm -2 , entirely vanished from the surface after the samples were vacuum-annealed at temperatures above 300 deg. C. Using a direct method, electron beam microanalysis, we have determined that the defects of the hillock type includes oxygen and excessive As, while the 'pits' proved to be identical in their chemical composition to InAs. Vacuum anneals were found to cause a decrease in As surface concentration relative to In on InAs surface, with a concomitant rise of surface recombination rate.

NeuroSeek dual-color image processing infrared focal plane array

Science.gov (United States)

McCarley, Paul L.; Massie, Mark A.; Baxter, Christopher R.; Huynh, Buu L.

1998-09-01

Several technologies have been developed in recent years to advance the state of the art of IR sensor systems including dual color affordable focal planes, on-focal plane array biologically inspired image and signal processing techniques and spectral sensing techniques. Pacific Advanced Technology (PAT) and the Air Force Research Lab Munitions Directorate have developed a system which incorporates the best of these capabilities into a single device. The 'NeuroSeek' device integrates these technologies into an IR focal plane array (FPA) which combines multicolor Midwave IR/Longwave IR radiometric response with on-focal plane 'smart' neuromorphic analog image processing. The readout and processing integrated circuit very large scale integration chip which was developed under this effort will be hybridized to a dual color detector array to produce the NeuroSeek FPA, which will have the capability to fuse multiple pixel-based sensor inputs directly on the focal plane. Great advantages are afforded by application of massively parallel processing algorithms to image data in the analog domain; the high speed and low power consumption of this device mimic operations performed in the human retina.

Jačina sveze adhezijskih materijala na tvrda zubna tkiva

OpenAIRE

Žagar, Polona

2017-01-01

Adhezija se odnosi na povezivanje atoma i molekula na kontaktnim površinama različitih materijala. Adhezijske sustave možemo podjeliti prema interakciji sa tvrdim zubnim tkivima na jetkajuće ispirajuće, samojetkajuće i staklenoionomerne sustave. Univerzalni adhezivi su najnovija generacija adheziva na tržištu. Mogu se koristiti kao jetkajući ispirajući i samojetkajući sustavi. U ovom radu je ispitivana jačina adhezijske sveze s caklinom jetkajuće ispirajućim i univerzalnim adheziv...

Selective area growth of InAs nanowires from SiO2/Si(1 1 1) templates direct-written by focused helium ion beam technology

Science.gov (United States)

Yang, Che-Wei; Chen, Wei-Chieh; Chou, Chieh; Lin, Hao-Hsiung

2018-02-01

We report on the selective area growth of InAs nanowires on patterned SiO2/Si (1 1 1) nano-holes, prepared by focused helium ion beam technology. We used a single spot mode, in which the focused helium ion beam was fixed on a single point with a He+-ion dosage, ranging from 1.5 pC to 8 pC, to drill the nano-holes. The smallest hole diameter achieved is ∼8 nm. We found that low He+-ion dosage is able to facilitate the nucleation of (1 1 1)B InAs on the highly mismatched Si, leading to the vertical growth of InAs nanowires (NWs). High He-ion dosage, on the contrary, severely damaged Si surface, resulting in tilted and stripe-like NWs. In addition to titled NW grown from (1 1 1)A InAs domain, a new titled growth direction due to defect induced twinning was observed. Cross-sectional TEM images of vertical NWs show mixed wurtizite (WZ) and zincblende (ZB) phases, while WZ phase dominants. The stacking faults resulting from the phase change is proportional to NW diameter, suggesting that the critical diameter of phase turning is larger than 110 nm, the maximum diameter of our NWs. Period of misfit dislocation at the InAs/Si interface of vertical NW is also found larger than the theoretical value when the diameter of heterointerface is smaller than 50 nm, indicating that the small contact area is able to accommodate the large lattice and thermal mismatch between InAs and Si.

Absorption coefficients for interband optical transitions in a strained InAs1−xPx/InP quantum wire

International Nuclear Information System (INIS)

Saravanan, S.; John Peter, A.; Lee, Chang Woo

2014-01-01

Excitons confined in an InAs 1−x P x /InP (x=0.2) quantum well wire are studied in the presence of magnetic field strength. Numerical calculations are carried out using variational approach within the single band effective mass approximation. The compressive strain contribution to the confinement potential is included throughout the calculations. The energy difference of the ground and the first excited state is investigated in the influence of magnetic field strength taking into account the geometrical confinement effect. The magnetic field induced optical band as a function of wire radius is investigated in the InAs 0.8 P 0.2 /InP quantum well wire. The valence-band anisotropy is included in our theoretical model by employing different hole masses in different spatial directions. The optical gain as a function of incident photon energy is computed in the presence of magnetic field strength. The corresponding 1.55 μm wavelength is achieved for 40 Å InAs 0.8 P 0.2 /InP quantum well wire. We hope that the results could be used for the potential applications in fiber optic communications. -- Highlights: • Magnetic field induced excitons confined in a InAs 1−x P x /InP (x=0.2) quantum well wire are studied. • The compressive strain is included throughout the calculations. • The energy difference of the ground and the first excited state is investigated in the presence of magnetic field strength. • The magnetic field induced optical band with the geometrical confinement is studied. • The optical gain with the photon energy is computed in the presence of magnetic field strength

Real-time trajectory optimization on parallel processors

Science.gov (United States)

Psiaki, Mark L.

1993-01-01

A parallel algorithm has been developed for rapidly solving trajectory optimization problems. The goal of the work has been to develop an algorithm that is suitable to do real-time, on-line optimal guidance through repeated solution of a trajectory optimization problem. The algorithm has been developed on an INTEL iPSC/860 message passing parallel processor. It uses a zero-order-hold discretization of a continuous-time problem and solves the resulting nonlinear programming problem using a custom-designed augmented Lagrangian nonlinear programming algorithm. The algorithm achieves parallelism of function, derivative, and search direction calculations through the principle of domain decomposition applied along the time axis. It has been encoded and tested on 3 example problems, the Goddard problem, the acceleration-limited, planar minimum-time to the origin problem, and a National Aerospace Plane minimum-fuel ascent guidance problem. Execution times as fast as 118 sec of wall clock time have been achieved for a 128-stage Goddard problem solved on 32 processors. A 32-stage minimum-time problem has been solved in 151 sec on 32 processors. A 32-stage National Aerospace Plane problem required 2 hours when solved on 32 processors. A speed-up factor of 7.2 has been achieved by using 32-nodes instead of 1-node to solve a 64-stage Goddard problem.

EG-Assisted Synthesis and Electrochemical Performance of Ultrathin Carbon-Coated LiMnPO4 Nanoplates as Cathodes in Lithium Ion Batteries

Directory of Open Access Journals (Sweden)

Liwei Su

2015-01-01

Full Text Available Ultrathin carbon-coated LiMnPO4 (ULMP/C nanoplates were prepared through an ethylene glycol- (EG- assisted pyrolysis method. Different from most of LiMnPO4/C works, the obtained ULMP/C possessed relatively small particle size (less than 50 nm in thickness and preferable carbon coating (~1 nm in thickness, 2 wt.%. As a reference, LiMnPO4/C (LMP/C composites were also fabricated via the traditional hydrothermal method. X-ray diffraction (XRD, scanning electron microscopy (SEM, transmission electron microscopy (TEM, energy dispersive X-ray spectroscopy (EDS, thermogravimetric analysis (TG, galvanostatic charge-discharge, and cyclic voltammetry (CV were performed to characterize the crystalline phase, morphology, structure, carbon content, and electrochemical behaviors of samples. The electrochemical performance of bare and carbon-coated LiMnPO4 was evaluated as cathodes in lithium ion batteries. As a result, the obtained ULMP/C nanoplates demonstrated much higher reversible capacities (110.9 mAh g−1 after 50 cycles at 0.1 C and rate performances than pure LMP and LMP/C composites. This facile and efficient EG-assisted pyrolysis method can enlighten us on exploiting advanced routes to modify active materials with ultrathin and homogeneous carbon layers.

Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

International Nuclear Information System (INIS)

Salman, S.; Folliot, H.; Le Pouliquen, J.; Chevalier, N.; Rohel, T.; Paranthoën, C.; Bertru, N.; Labbé, C.; Letoublon, A.; Le Corre, A.

2012-01-01

Highlights: ► The thermal conductivity of InAs on InP (1 1 3)B quantum dots stacks is measured. ► The growth of a close stack of 100 layers of InAs using AlAs strain compensating layers is presented. ► New data on the thermal conductivity of InP n-doped susbtrate are given. - Abstract: The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3ω method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3ω method in the 20–200 °C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.

Ultrasound Vector Flow Imaging: Part II: Parallel Systems

DEFF Research Database (Denmark)

Jensen, Jørgen Arendt; Nikolov, Svetoslav Ivanov; Yu, Alfred C. H.

2016-01-01

The paper gives a review of the current state-of-theart in ultrasound parallel acquisition systems for flow imaging using spherical and plane waves emissions. The imaging methods are explained along with the advantages of using these very fast and sensitive velocity estimators. These experimental...... ultrasound imaging for studying brain function in animals. The paper explains the underlying acquisition and estimation methods for fast 2-D and 3-D velocity imaging and gives a number of examples. Future challenges and the potentials of parallel acquisition systems for flow imaging are also discussed....

Simulation of quantum dots size and spacing effect for intermediate band solar cell application based on InAs quantum dots arrangement in GaAs

Energy Technology Data Exchange (ETDEWEB)

Hendra, P. I. B., E-mail: ib.hendra@gmail.com; Rahayu, F., E-mail: ib.hendra@gmail.com; Darma, Y., E-mail: ib.hendra@gmail.com [Physical Vapor Deposition Laboratory, Physics of Material Electronics Research, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132 (Indonesia)

2014-03-24

Intermediate band solar cell (IBSC) has become a promising technology in increasing solar cell efficiency. In this work we compare absorption coefficient profile between InAs quantum dots with GaAs bulk. We calculate the efficiency of GaAs bulk and GaAs doped with 2, 5, and 10 nm InAs quantum dot. Effective distances in quantum dot arrangement based on electron tunneling consideration were also calculated. We presented a simple calculation method with low computing power demand. Results showed that arrangement of quantum dot InAs in GaAs can increase solar cell efficiency from 23.9 % initially up to 60.4%. The effective distance between two quantum dots was found 2 nm in order to give adequate distance to prevent electron tunneling and wave functions overlap.

Electron Spin Polarization and Detection in InAs Quantum Dots Through p-Shell Trions

Science.gov (United States)

2010-01-08

optical control of spin states in quantum dots. II. EXPERIMENT The QD sample consists of 20 layers of InAs QDs, grown by molecular -beam epitaxy through...anisotropic 2D harmonic poten- tials. The electrons and holes are described by Fock- Darwin states harmonic oscillators with lateral sizes ax and ay in this

Spin interactions in InAs quantum dots

Science.gov (United States)

Doty, M. F.; Ware, M. E.; Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

2006-03-01

Fine structure splittings in optical spectra of self-assembled InAs quantum dots (QDs) generally arise from spin interactions between particles confined in the dots. We present experimental studies of the fine structure that arises from multiple charges confined in a single dot [1] or in molecular orbitals of coupled pairs of dots. To probe the underlying spin interactions we inject particles with a known spin orientation (by using polarized light to perform photoluminescence excitation spectroscopy experiments) or use a magnetic field to orient and/or mix the spin states. We develop a model of the spin interactions that aids in the development of quantum information processing applications based on controllable interactions between spins confined to QDs. [1] Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot, Phys. Rev. Lett. 95, 177403 (2005)

Spin Qubits in GaAs Heterostructures and Gating of InAs Nanowires for Lowtemperature Measurements

DEFF Research Database (Denmark)

Nissen, Peter Dahl

of the contenders in the race to build a large-scale quantum computer, is such a component, and research aiming to build, manipulate and couple spin qubits is looking at many materials systems to nd one where the requirements for fast control and long coherence time can be combined with ecient coupling between...... distant qubits. This thesis presents electric measurement on two of the materials systems currently at the forefront of the spin qubit race, namely InAs nanowires and GaAs/AlGaAs heterostructures. For the InAs nanowires we investigate dierent gating geometries towards the goal of dening stable quantum...... electrodes induces tunable barriers of up to 0:25 eV. From the temperature dependence of the conductance, the barrier height is extracted and mapped as a function of gate voltage. Top and bottom gates are similar to each other in terms of electrostatic couplings (lever arms 0:10:2 eV=V) and threshold...

Comparative study of porosification in InAs, InP, ZnSe and ZnCdS

International Nuclear Information System (INIS)

Monaico, Eduard; Tiginyanu, Ion; Nielsch, Kornelius; Ursaki, Veaceslav; Colibaba, Gleb; Nedeoglo, Dmitrii; Cojocaru, Ala; Foell Helmut

2013-01-01

We report on a comparative study of the pore growth during anodization of a narrow-bandgap III-V compound (InAs), a medium-bandgap III-V one (InP) and wide-bandgap II-VI semiconductors (ZnSe and Zn 0,4 Cd 0,6 S). According to the obtained results, the morphology of the porous layers can be controlled by the composition of the electrolyte and the applied electrochemical parameters. It was evidenced that in the narrow bandgap semiconductor InAs it is difficult to control the mechanism of pore growth. Both current line oriented pores and crystallographically oriented pores were produced in the medium-bandgap material InP. The electrochemical nanostructuring of wide-bandgap semiconductors realized in single crystalline high conductivity samples evidenced only current-line oriented pores. This behavior is explained in terms of difference in the values of electronegativity of the constituent atoms and the degree of ionicity. (authors)

Crystalline mesoporous tungsten oxide nanoplate monoliths synthesized by directed soft template method for highly sensitive NO2 gas sensor applications

International Nuclear Information System (INIS)

Hoa, Nguyen Duc; Duy, Nguyen Van; Hieu, Nguyen Van

2013-01-01

Graphical abstract: Display Omitted Highlights: ► Mesoporous WO 3 nanoplate monoliths were obtained by direct templating synthesis. ► Enable effective accession of the analytic molecules for the sensor applications. ► The WO 3 sensor exhibited a high performance to NO 2 gas at low temperature. -- Abstract: Controllable synthesis of nanostructured metal oxide semiconductors with nanocrystalline size, porous structure, and large specific surface area is one of the key issues for effective gas sensor applications. In this study, crystalline mesoporous tungsten oxide nanoplate-like monoliths with high specific surface areas were obtained through instant direct-templating synthesis for highly sensitive nitrogen dioxide (NO 2 ) sensor applications. The copolymer soft template was converted into a solid carbon framework by heat treatment in an inert gas prior to calcinations in air to sustain the mesoporous structure of tungsten oxide. The multidirectional mesoporous structures of tungsten oxide with small crystalline size, large specific surface area, and superior physical characteristics enabled the rapid and effective accession of analytic gas molecules. As a result, the sensor response was enhanced and the response and recovery times were reduced, in which the mesoporous tungsten oxide based gas sensor exhibited a superior response of 21,155% to 5 ppm NO 2 . In addition, the developed sensor exhibited selective detection of low NO 2 concentration in ammonia and ethanol at a low temperature of approximately 150 °C.

Direct Identification of Atomic-Like Electronic Levels in InAs Nano crystal Quantum Dots

International Nuclear Information System (INIS)

Millo, O.; Katz, D.

1999-01-01

The size dependent level structure of InAs nano crystals in the range 2-7 nm in diameter is investigated using both tunneling and optical spectroscopies. The tunneling measurements are performed using a cryogenic scanning tunneling microscope on individual nano crystals that, are attached to a gold substrate via dithiol molecules. The tunneling I-V characteristics manifest an interplay between single electron charging and quantum size effects. We are able to directly identify quantum confined states of isolated InAs nano crystals having s and p symmetries. These states are observed in the I-V curves as two and six-fold single electron charging multiplets. Excellent agreement is found between the strongly allowed optical transitions [1] and the spacing of levels detected in the tunneling experiment. This correlation provides new information on the quantum-dot level structure, from which we conclude that the top-most valence band state has both s and p characteristics. The interplay between level structure singles electron charging of the nano crystals obeys an atomic-like Aufbau sequential electron level occupation

Formation of anodic layers on InAs (111)III. Study of the chemical composition

Energy Technology Data Exchange (ETDEWEB)

Valisheva, N. A., E-mail: valisheva@thermo.isp.nsc.ru; Tereshchenko, O. E. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Prosvirin, I. P.; Kalinkin, A. V. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation); Goljashov, V. A. [Novosibirsk State University (Russian Federation); Levtzova, T. A. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Bukhtiyarov, V. I. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation)

2012-04-15

The chemical composition of {approx}20-nm-thick anodic layers grown on InAs (111)III in alkaline and acid electrolytes containing or not containing NH{sub 4}F is studied by X-ray photoelectron spectroscopy. It is shown that the composition of fluorinated layers is controlled by the relation between the concentrations of fluorine and hydroxide ions in the electrolyte and by diffusion processes in the growing layer. Fluorine accumulates at the (anodic layer)/InAs interface. Oxidation of InAs in an acid electrolyte with a low oxygen content and a high NH{sub 4}F content brings about the formation of anodic layers with a high content of fluorine and elemental arsenic and the formation of an oxygen-free InF{sub x}/InAs interface. Fluorinated layers grown in an alkaline electrolyte with a high content of O{sup 2-} and/or OH{sup -} groups contain approximately three times less fluorine and consist of indium and arsenic oxyfluorides. No distinction between the compositions of the layers grown in both types of fluorine-free electrolytes is established.

Analysis and optimization of RC delay in vertical nanoplate FET

Science.gov (United States)

Woo, Changbeom; Ko, Kyul; Kim, Jongsu; Kim, Minsoo; Kang, Myounggon; Shin, Hyungcheol

2017-10-01

In this paper, we have analyzed short channel effects (SCEs) and RC delay with Vertical nanoplate FET (VNFET) using 3-D Technology computer-aided design (TCAD) simulation. The device is based on International Technology Road-map for Semiconductor (ITRS) 2013 recommendations, and it has initially gate length (LG) of 12.2 nm, channel thickness (Tch) of 4 nm, and spacer length (LSD) of 6 nm. To obtain improved performance by reducing RC delay, each dimension is adjusted (LG = 12.2 nm, Tch = 6 nm, LSD = 11.9 nm). It has each characteristic in this dimension (Ion/Ioff = 1.64 × 105, Subthreshold swing (S.S.) = 73 mV/dec, Drain-induced barrier lowering (DIBL) = 60 mV/V, and RC delay = 0.214 ps). Furthermore, with long shallow trench isolation (STI) length and thick insulator thickness (Ti), we can reduce RC delay from 0.214 ps to 0.163 ps. It is about a 23.8% reduction. Without decreasing drain current, there is a reduction of RC delay as reducing outer fringing capacitance (Cof). Finally, when source/drain spacer length is set to be different, we have verified RC delay to be optimum.

Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

Dhifallah, I., E-mail: ines.dhifallah@gmail.co [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia); Daoudi, M.; Bardaoui, A. [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia); Eljani, B. [Unite de recherche sur les Hetero-Epitaxie et Applications, Faculte des Sciences de Monastir (Tunisia); Ouerghi, A. [Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay 91 46a0, Marcoussis (France); Chtourou, R. [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia)

2011-05-15

Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E{sub e-hh}) and electron-light-hole (E{sub e-lh}) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-{delta}-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schroedinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-{delta}-doped samples, we have determined the internal electric field introduced by ionized Si-{delta}-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges. - Research highlights: {yields} Studying HEMTs structures with different silicon doping content. {yields} An increase of the electric field in the InAs layer with increasing Si content. {yields} The interband energy transitions in the HEMTs structures have been obtained from PR. {yields} Experimental and theoretical values of transitions energies were in good agreement.

Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

International Nuclear Information System (INIS)

Dhifallah, I.; Daoudi, M.; Bardaoui, A.; Eljani, B.; Ouerghi, A.; Chtourou, R.

2011-01-01

Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E e-hh ) and electron-light-hole (E e-lh ) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-δ-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schroedinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-δ-doped samples, we have determined the internal electric field introduced by ionized Si-δ-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges. - Research highlights: → Studying HEMTs structures with different silicon doping content. → An increase of the electric field in the InAs layer with increasing Si content. → The interband energy transitions in the HEMTs structures have been obtained from PR. → Experimental and theoretical values of transitions energies were in good agreement.

Liquid phase epitaxy of abrupt junctions in InAs and studies of injection radiative tunneling processes

International Nuclear Information System (INIS)

Bull, D.J.

1977-01-01

The p-n junction in a InAs crystal, by liquid phase epitaxy is obtained. The processes of injection and tunneling radiative recombination by emitted radiation from active region of p-n junction for low injection current are studied. (M.C.K.) [pt

Atomic structures of a monolayer of AlAs, GaAs, and InAs on Si(111)

International Nuclear Information System (INIS)

Lee, Geunjung; Yoon, Younggui

2010-01-01

We study atomic structures of a monolayer of AlAs, GaAs, and InAs on a Si(111) substrate from first-principles. The surface with the stacking sequence of ...SiSiMAsSiAs is energetically more stable than the surface with the stacking sequence of ...SiSiSiAsMAs, where M is Al, Ga, or In. The atomic structure of the three top layers of the low-energy surfaces are quite robust, irrespective of M, and the atomic structure of the AlAsSiAs terminated surface and that of the GaAsSiAs terminated surface are very similar. For the high-energy AsMAs terminated surfaces, the broken local tetrahedral symmetry plays an important role in the atomic structures. The calculated atomic structures of InAs on the Si(111) substrate depart most from the structure of crystalline Si.

Seeded growth of InP and InAs quantum rods using indium acetate and myristic acid

International Nuclear Information System (INIS)

Shweky, Itzhak; Aharoni, Assaf; Mokari, Taleb; Rothenberg, Eli; Nadler, Moshe; Popov, Inna; Banin, Uri

2006-01-01

A synthesis of soluble III-V semiconductor quantum rods using gold nanoparticles to direct and catalyze one-dimensional growth is developed. The growth takes place via the solution-liquid-solid (SLS) mechanism where proper precursors are injected into a coordinating solvent. We report the synthesis of InP nanorods using indium acetate and myristic acid with gold nanoparticles as the catalysts in the SLS growth mode. A similar route was successfully developed for the growth of InAs nanorods. We find that the amount of Au catalyst in the reaction is an important parameter to achieve shape control. Transmission electron microscope (TEM) images of InP and InAs nanocrystals revealed that the crystals are mostly rod-shaped, and provide strong evidence for Au presence in one edge. The rods were characterized structurally using X-ray diffraction and high-resolution TEM and optically by absorption and photoluminescence

Hydrothermal Synthesis, Characterization, and Optical Properties of Ce Doped Bi2MoO6 Nanoplates

Directory of Open Access Journals (Sweden)

Anukorn Phuruangrat

2014-01-01

Full Text Available Undoped and Ce doped Bi2MoO6 samples were synthesized by hydrothermal reaction at 180°C for 20 h. Phase, morphology, atomic vibration, and optical properties were characterized by X-ray powder diffraction (XRD, X-ray photoelectron spectroscopy (XPS, Raman spectrophotometry, Fourier transform infrared (FTIR spectroscopy, scanning electron microscopy (SEM, transmission electron microscopy (TEM, selected area electron diffraction (SAED, and UV-visible spectroscopy. In this research, the products were orthorhombic Bi2MoO6 nanoplates with the growth direction along the [0b0], including the asymmetric and symmetric stretching and bending modes of Bi–O and Mo–O. Undoped and Ce doped Bi2MoO6 samples show a strong absorption in the UV region.

InAs nanowire formation on InP(001)

International Nuclear Information System (INIS)

Parry, H. J.; Ashwin, M. J.; Jones, T. S.

2006-01-01

The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400-480 deg. C, and also following high temperature annealing (480 deg. C) after deposition at 400 deg. C. The wires show preferential orientation along and often exhibit pronounced serpentine behavior due to the presence of kinks, an effect that is reduced at increasing growth temperature. The results suggest that the serpentine behavior is related to the degree of initial surface order. Kinks in the wires appear to act as nucleation centers for In adatoms migrating along the wires during annealing, leading to the coexistence of large three-dimensional islands

Emission and elastic strain in InGaAs/GaAs quantum wells with embedded InAs quantum dots

Energy Technology Data Exchange (ETDEWEB)

Vega-Macotela, L.G.; Polupan, G. [ESIME - Instituto Politecnico Nacional, Mexico D.F. 07738 (Mexico); Shcherbyna, Ye. [National Technical University-' ' KPI' ' , Kiev 03057 (Ukraine)

2012-07-15

Photoluminescence (PL) spectra have been studied in the symmetric GaAs/In{sub 0.15}Ga{sub 0.85}As/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs), grown at different temperatures from the range 470-535 C. The increase of QD growth temperature is accompanied by decreasing the QD surface density and the enlargement of QD lateral diameters. Simultaneously the variation of the PL intensity and PL peak positions none monotonously have been detected. To understand the reason of the variation of PL intensity and peak positions the PL temperature dependences and the X-ray diffraction (XRD) at low angles (1.75-1.92 ) have been studied. The fitting procedure is applied to analysis the temperature shift of PL peak positions. Fitting has been done on the base of empirical expression for the band gap shrinkage that uses the Einstein temperature parameter. The character non monotonous for the Ga/In inter diffusion versus QD growth temperatures has been revealed. The XRD study has detected the high intensity peaks that corresponds to the diffraction of X-ray beam from the (311) crystal planes in GaAs QWs. The position of XRD peaks in the structures with QD grown at 490-510 C is very close to the angles related to the diffraction from (311) planes in the bulk GaAs. In QD structures with QD grown at 470 and 525-535 C the (311) XRD peaks shift to the higher diffraction angles that testifies on the essential compressive strains in these structures. The reason of the variation non monotonously of elastic strain versus QD densities has been discussed (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth of InAs Wurtzite Nanocrosses from Hexagonal and Cubic Basis

DEFF Research Database (Denmark)

Krizek, Filip; Kanne, Thomas; Razmadze, Davydas

2017-01-01

. Two methods use conventional wurtzite nanowire arrays as a 6-fold hexagonal basis for growing single crystal wurtzite nanocrosses. A third method uses the 2-fold cubic symmetry of (100) substrates to form well-defined coherent inclusions of zinc blende in the center of the nanocrosses. We show......Epitaxially connected nanowires allow for the design of electron transport experiments and applications beyond the standard two terminal device geometries. In this Letter, we present growth methods of three distinct types of wurtzite structured InAs nanocrosses via the vapor-liquid-solid mechanism...

Gravitational Couplings for Gop-Planes and y-Op-Planes

OpenAIRE

Giraldo, Juan Fernando Ospina

2000-01-01

The Wess-Zumino actions for generalized orientifold planes (GOp-planes) and y-deformed orientifold planes (yOp-planes) are presented and two series power expantions are realized from whiches processes that involves GOp-planes,yOp-planes, RR-forms, gravitons and gaugeons, are obtained. Finally non-standard GOp-planes and y-Op-planes are showed.

The plane mixing layer between parallel streams of different velocities and different densities

International Nuclear Information System (INIS)

Fiedler, H.E.; Lummer, M.; Nottmeyer, K.

1990-01-01

The problem investigated is often encountered in technical applications. For its most basic configuration, the plane turbulent mixing layer, we use the notation as sketched in fig. 1. The influence of density inhomogeneities is twofold: (a) via buoyancy effects and (b) via inertia effects. The investigation described were aimed at studying the latter, while the former -- by appropriate choice of parameters - was essentially suppressed. (authors)

CTAB assisted synthesis of tungsten oxide nanoplates as an efficient low temperature NOX sensor

Science.gov (United States)

Mehta, Swati S.; Tamboli, Mohaseen S.; Mulla, Imtiaz S.; Suryavanshi, Sharad S.

2018-02-01

Tungsten oxide nanoplates with porous morphology were effectively prepared by acidification using CTAB (HexadeCetyltrimethyl ammonium bromide) as a surfactant. For characterization, the synthesized materials were subjected to X-Ray powder diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), UV-Visible spectroscopy (UV-Vis) and surface area (BET) measurements. The morphology and size of the particles were controlled by solution acidity. The BET results confirmed that the materials are well crystallized and mesoporous in nature. The nanocrystalline powder was used to prepare thick films by screen printing on alumina substrate for the investigation of gas sensing properties. The gas response measurements revealed that the samples acidified using 10 M H2SO4 exhibits highest response of 91% towards NOX at optimum temperature of 200 °C for 100 ppm, and it also exhibits 35% response at room temperature.

Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces

Energy Technology Data Exchange (ETDEWEB)

Henegar, A.J., E-mail: henegar1@umbc.edu; Gougousi, T., E-mail: gougousi@umbc.edu

2016-12-30

Graphical abstract: The interaction of the native oxides of GaAs(100) and InAs(100) with alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and TiO{sub 2} is compared. Al{sub 2}O{sub 3} if found to be a significantly better barrier against the transport of the surface native oxide during the film deposition as well as after post-deposition heat treatment. This superior blocking ability also limits the removal of the native oxides during the Al{sub 2}O{sub 3} ALD process. - Highlights: • Native oxide diffusion is required for continuous native oxide removal. • The diffusion barrier capabilities of Al{sub 2}O{sub 3} limits native oxide removal during ALD. • Arsenic oxide exhibits higher mobility from InAs compared to GaAs substrates. • Oxygen scavenging from the surface by trimethyl aluminum is confirmed. - Abstract: In this manuscript we compare the interaction of alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition with III-V native oxides. For that purpose we deposit Al{sub 2}O{sub 3} and TiO{sub 2}, using H{sub 2}O as the oxidizer, on GaAs(100) and InAs(100) native oxide surfaces. We find that there are distinct differences in the behavior of the two films. For the Al{sub 2}O{sub 3} ALD very little native oxide removal happens after the first few ALD cycles while the interaction of the alkyl amine precursor for TiO{sub 2} and the native oxides continues well after the surface has been covered with 2 nm of TiO{sub 2}. This difference is traced to the superior properties of Al{sub 2}O{sub 3} as a diffusion barrier. Differences are also found in the behavior of the arsenic oxides of the InAs and GaAs substrates. The arsenic oxides from the InAs surface are found to mix more efficiently in the growing dielectric film than those from the GaAs surface. This difference is attributed to

Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces

International Nuclear Information System (INIS)

Henegar, A.J.; Gougousi, T.

2016-01-01

Graphical abstract: The interaction of the native oxides of GaAs(100) and InAs(100) with alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition (ALD) of Al_2O_3 and TiO_2 is compared. Al_2O_3 if found to be a significantly better barrier against the transport of the surface native oxide during the film deposition as well as after post-deposition heat treatment. This superior blocking ability also limits the removal of the native oxides during the Al_2O_3 ALD process. - Highlights: • Native oxide diffusion is required for continuous native oxide removal. • The diffusion barrier capabilities of Al_2O_3 limits native oxide removal during ALD. • Arsenic oxide exhibits higher mobility from InAs compared to GaAs substrates. • Oxygen scavenging from the surface by trimethyl aluminum is confirmed. - Abstract: In this manuscript we compare the interaction of alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition with III-V native oxides. For that purpose we deposit Al_2O_3 and TiO_2, using H_2O as the oxidizer, on GaAs(100) and InAs(100) native oxide surfaces. We find that there are distinct differences in the behavior of the two films. For the Al_2O_3 ALD very little native oxide removal happens after the first few ALD cycles while the interaction of the alkyl amine precursor for TiO_2 and the native oxides continues well after the surface has been covered with 2 nm of TiO_2. This difference is traced to the superior properties of Al_2O_3 as a diffusion barrier. Differences are also found in the behavior of the arsenic oxides of the InAs and GaAs substrates. The arsenic oxides from the InAs surface are found to mix more efficiently in the growing dielectric film than those from the GaAs surface. This difference is attributed to lower native oxide stability as well as an initial diffusion path formation by the indium oxides.

Self-assembled monolayers of alkyl-thiols on InAs: A Kelvin probe force microscopy study

Science.gov (United States)

Szwajca, A.; Wei, J.; Schukfeh, M. I.; Tornow, M.

2015-03-01

We report on the preparation and characterization of self-assembled monolayers from aliphatic thiols with different chain length and termination on InAs (100) planar surfaces. This included as first step the development and investigation of a thorough chemical InAs surface preparation step using a dedicated bromine/NH4OH-based etching process. Ellipsometry, contact angle measurements and atomic force microscopy (AFM) indicated the formation of smooth, surface conforming monolayers. The molecular tilt angles were obtained as 30 ± 10° with respect to the surface normal. Kelvin probe force microscopy (KPFM) measurements in hand with Parameterized Model number 5 (PM5) calculations of the involved molecular dipoles allowed for an estimation of the molecular packing densities on the surface. We obtained values of up to n = 1014 cm- 2 for the SAMs under study. These are close to what is predicted from a simple geometrical model that would calculate a maximum density of about n = 2.7 × 1014 cm- 2. We take this as additional conformation of the substrate smoothness and quality of our InAs-SAM hybrid layer systems.

Strain in GaAs / InAs core-shell nanowire heterostructures grown on GaAs

Energy Technology Data Exchange (ETDEWEB)

Biermanns, Andreas; Davydok, Anton; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik (Germany); Rieger, Torsten; Lepsa, Mihail Ion [Peter Gruenberg Institut 9, Forschungszentrum Juelich (Germany); JARA - Fundamentals of Future Information Technology (Germany)

2012-07-01

The growth of semiconductor nanowires (NWs) has attracted significant interest in recent years due to the possible fabrication of novel semiconductor devices for future electronic and opto-electronic applications. Compared to planar heterostructures, the nanowire approach offers an advantage regarding the possibility to form heterostructures between highly lattice mismatched systems, because the free surface of the nanowires allows to relieve the strain more efficiently. One particular way to form heterostructures in the NW geometry, is the fabrication of core-shell devices, in which a NW core is surrounded by a shell of different material. The understanding of the mutual strain between core and shell, as well as the relaxation behavior of the system are crucial for the fabrication of functional devices. In this contribution we report on first X-ray diffraction measurements of GaAs-core/InAs-shell nanowires grown on GaAs(111) by molecular beam epitaxy. Using symmetric- and grazing-incidence X-ray diffraction, the relaxation state of the InAs shell as well as the strain in the GaAs core are measured as function of the InAs shell thickness, showing a gradual relaxation behavior of the shell.

Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

KAUST Repository

Rota, Michele B.; Ameruddin, Amira S.; Wong-Leung, Jennifer; Belabbes, Abderrezak; Gao, Qiang; Miriametro, Antonio; Mura, Francesco; Tan, Hark Hoe; Polimeni, Antonio; Bechstedt, Friedhelm; Jagadish, Chennupati; Capizzi, Mario

2017-01-01

One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ

InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

International Nuclear Information System (INIS)

Jakomin, R.; Kawabata, R. M. S.; Souza, P. L.; Mourão, R. T.; Pires, M. P.; Micha, D. N.; Xie, H.; Fischer, A. M.; Ponce, F. A.

2014-01-01

InAs quantum dot multilayers have been grown using Al x Ga 1−x As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure

Formation of InAs/GaAs quantum dots from a subcritical InAs wetting layer: A reflection high-energy electron diffraction and theoretical study

International Nuclear Information System (INIS)

Song, H. Z.; Usuki, T.; Nakata, Y.; Yokoyama, N.; Sasakura, H.; Muto, S.

2006-01-01

InAs/GaAs quantum dots (QD's) are formed by postgrowth annealing of an InAs wetting layer thinner than the critical thickness for the transition from two- (2D) to three-dimensional (3D) growth mode. Reflection high energy electron diffraction is used to monitor the QD formation. Based on a mean-field theory [Phys. Rev. Lett. 79, 897 (1997)], the time evolution of total QD's volume, first increasing and finally saturating, is well explained by precursors forming during wetting layer growth and converting into nucleated QD's after growth stop. Both the saturation QD's volume and the QD nucleation rate depend exponentially on the InAs coverage. These behaviors and their temperature and InAs growth rate dependences are essentially understandable in the frame of the mean-field theory. Similar analysis to conventional QD growth suggests that the often observed significant mass transport from wetting layer to QD's can be ascribed to the precursors existing before 2D-3D growth mode transition

Self-Assembly of Bi₂Te₃-Nanoplate/Graphene-Nanosheet Hybrid by One-Pot Route and Its Improved Li-Storage Properties

Directory of Open Access Journals (Sweden)

Xinbing Zhao

2012-07-01

Full Text Available A sandwich structured Bi₂Te₃-nanoplates/graphene-nanosheet (Bi₂Te₃/G hybrid has been synthesized by a facile in situ solvothermal route and has been investigated as a potential anode material for Li-ion batteries. Bi₂Te₃ grows during the solvothermal process with the simultaneous reduction of graphite oxide into graphene. The in situ formation process of the hybrid has been investigated by X-ray diffraction and X-ray photoelectron spectra. The Li-storage mechanism and performance of Bi₂Te₃/G and bare Bi₂Te₃ have been studied by galvanostatic cycling and cyclic voltammetry. The Bi₂Te₃/G sandwich exhibits an obviously improved cycling stability compared to bare Bi₂Te₃. The enhancement in electrochemical performance can be attributed to the combined conducting, confining and dispersing effects of graphene for Bi₂Te₃ nanoplates and to the self-assembled sandwich structure.

Step-flow anisotropy of the m-plane GaN (1100) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Sawicka, Marta; Siekacz, Marcin; Skierbiszewski, Czeslaw; Turski, Henryk; Krysko, Marcin; DziePcielewski, Igor; Grzegory, Izabella; Smalc-Koziorowska, Julita

2011-01-01

The homoepitaxial growth of m-plane (1100) GaN was investigated by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions. The surface morphologies as a function of sample miscut were studied, providing evidence for a strong growth anisotropy that is a consequence of the anisotropy of Ga adatom diffusion barriers on the m-plane surface recently calculated ab initio[Lymperakis and Neugebauer, Phys. Rev. B 79, 241308(R) (2009)]. We found that substrate miscut toward [0001] implies a step flow toward while substrate miscut toward [0001] causes formation of atomic steps either perpendicular or parallel to the [0001] direction, under N-rich conditions at 730 deg C. We describe the growth conditions for achieving atomically flat m-plane GaN layers with parallel atomic steps.

Steering of quantum waves: Demonstration of Y-junction transistors using InAs quantum wires

Science.gov (United States)

Jones, Gregory M.; Qin, Jie; Yang, Chia-Hung; Yang, Ming-Jey

2005-06-01

In this paper we demonstrate using an InAs quantum wire Y-branch switch that the electron wave can be switched to exit from the two drains by a lateral gate bias. The gating modifies the electron wave functions as well as their interference pattern, causing the anti-correlated, oscillatory transconductances. Our result suggests a new transistor function in a multiple-lead ballistic quantum wire system.

Enhanced Photoelectrocatalytic Activity of BiOI Nanoplate-Zinc Oxide Nanorod p-n Heterojunction.

Science.gov (United States)

Kuang, Pan-Yong; Ran, Jing-Run; Liu, Zhao-Qing; Wang, Hong-Juan; Li, Nan; Su, Yu-Zhi; Jin, Yong-Gang; Qiao, Shi-Zhang

2015-10-19

The development of highly efficient and robust photocatalysts has attracted great attention for solving the global energy crisis and environmental problems. Herein, we describe the synthesis of a p-n heterostructured photocatalyst, consisting of ZnO nanorod arrays (NRAs) decorated with BiOI nanoplates (NPs), by a facile solvothermal method. The product thus obtained shows high photoelectrochemical water splitting performance and enhanced photoelectrocatalytic activity for pollutant degradation under visible light irradiation. The p-type BiOI NPs, with a narrow band gap, not only act as a sensitizer to absorb visible light and promote electron transfer to the n-type ZnO NRAs, but also increase the contact area with organic pollutants. Meanwhile, ZnO NRAs provide a fast electron-transfer channel, thus resulting in efficient separation of photoinduced electron-hole pairs. Such a p-n heterojunction nanocomposite could serve as a novel and promising catalyst in energy and environmental applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Uniform Fe{sub 3}O{sub 4} microflowers hierarchical structures assembled with porous nanoplates as superior anode materials for lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaoliang [Institute of Electrostatic & Electromagnetic Protection, Mechanical Engineering College, Shijiazhuang 050003 (China); Liu, Yanguo [School of Resources and Materials, Northeastern University at Qinhuangdao, Qinhuangdao 066004 (China); Arandiyan, Hamidreza [Particles and Catalysis Research Group, School of Chemical Engineering, The University of New South Wales, Sydney, New South Wales 2052 (Australia); Yang, Hongping; Bai, Lu; Mujtaba, Jawayria [Beijing National Center for Electron Microscopy, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Wang, Qingguo; Liu, Shanghe [Institute of Electrostatic & Electromagnetic Protection, Mechanical Engineering College, Shijiazhuang 050003 (China); Sun, Hongyu, E-mail: hyltsun@gmail.com [Beijing National Center for Electron Microscopy, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Department of Micro- and Nanotechnology, Technical University of Denmark, 2800 Kongens Lyngby (Denmark)

2016-12-15

Highlights: • Uniform Fe{sub 3}O{sub 4} microflowers hierarchical structures were successfully prepared. • The Fe{sub 3}O{sub 4} microflowers are assembled with porous nanoplates. • Hollow Fe{sub 3}O{sub 4} microspheres exhibit better lithium storage properties than Fe{sub 3}O{sub 4} microspheres. • The good lithium storage properties are attributed to the special structural nature. - Abstract: Uniform Fe{sub 3}O{sub 4} microflowers assembled with porous nanoplates were successfully synthesized by a solvothermal method and subsequent annealing process. The structural and compositional analysis of the Fe{sub 3}O{sub 4} microflowers were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). The Bruauer–Emmett–Teller (BET) specific surface area was calculated by the nitrogen isotherm curve and pore size distribution of Fe{sub 3}O{sub 4} microflowers was determined by the Barret–Joyner–Halenda (BJH) method. When evaluated as anode material for lithium-ion batteries, the as-prepared Fe{sub 3}O{sub 4} microflowers electrodes delivered superior capacity, better cycling stability and rate capability than that of Fe{sub 3}O{sub 4} microspheres electrodes. The improved electrochemical performance was attributed to the microscale flowerlike architecture and the porous sheet structural nature.

m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates

International Nuclear Information System (INIS)

Armitage, R.; Horita, M.; Suda, J.; Kimoto, T.

2007-01-01

A series of m-plane GaN layers with the Ga beam-equivalent pressure (BEP) as the only varied parameter was grown by rf-plasma assisted molecular beam epitaxy on m-plane 4H-SiC substrates using AlN buffer layers. The smoothest growth surfaces and most complete film coalescence were found for the highest Ga BEP corresponding to the Ga droplet accumulation regime. However, better structural quality as assessed by x-ray rocking curves was observed for growth at a lower Ga BEP value below the droplet limit. The variation of rocking curve widths for planes inclined with respect to the epilayer c axis followed a different trend with Ga BEP than those of reflections parallel to the c axis. The GaN layers were found to exhibit a large residual compressive strain along the a axis

The third order nonlinear susceptibility of InAs at infrared region

International Nuclear Information System (INIS)

Musayev, M.A.

2008-01-01

Nonlinear susceptibilities of the third order and coefficient of nonlinear absorption in InAs n-type with a different degree of a doping have been measured. The values of the third order nonlinear susceptibilities have derived from these measurements essentially exceed the values calculated on the basis of model featuring nonlinear susceptibility of electrons, being in conduction-band nonparabolicity. It has been shown that the observable discrepancy has been eliminated, if in calculation a dissipation of energy of electrons has been considered. Growth of efficiency at four-wave mixingin narrow-gap semiconductors has been restricted to nonlinear absorption of interacting waves

In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si

Energy Technology Data Exchange (ETDEWEB)

Dimakis, Emmanouil; Ramsteiner, Manfred; Huang, Chang-Ning; Trampert, Achim; Riechert, Henning; Geelhaar, Lutz [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich [Festkörperphysik, Universität Siegen, Walter-Flex-Str. 3, 57072 Siegen (Germany)

2013-09-30

Growth and structural aspects of the in situ doping of InAs nanowires with Si have been investigated. The nanowires were grown catalyst-free on Si(111) substrates by molecular beam epitaxy. The supply of Si influenced the growth kinetics, affecting the nanowire dimensions, but not the degree of structural polytypism, which was always pronounced. As determined by Raman spectroscopy, Si was incorporated as substitutional impurity exclusively on In sites, which makes it a donor. Previously unknown Si-related Raman peaks at 355 and 360 cm{sup −1} were identified, based on their symmetry properties in polarization-dependent measurements, as the two local vibrational modes of an isolated Si impurity on In site along and perpendicular, respectively, to the c-axis of the wurtzite InAs crystal.

INFLUENCE OF LOW-ENERGY AR-SPUTTERING ON THE ELECTRONIC-PROPERTIES OF INAS-BASED QUANTUM-WELL STRUCTURES

NARCIS (Netherlands)

Magnee, P.H.C.; den Hartog, S.G.; Wees, B.J.van; Klapwijk, T.M; van de Graaf, W.; Borghs, G.

1995-01-01

The influence of low energy (80-500 eV) Ar-ion milling cleaning techniques on InAs based quantum well structures is investigated. It is found that both etching with a Kaufmann source and sputter-etching with a rf-plasma enhances the electron density and reduces the mobility. An anneal at 180 degrees

The effect of a negative capacitance circuit on the out-of-plane dissipation and stiffness of a piezoelectric membrane

International Nuclear Information System (INIS)

Korde, Umesh A; Wickersham, Miles A; Carr, Stephen G

2008-01-01

This paper investigates the out-of-plane dynamics of a piezoelectric membrane with a negative capacitance circuit connected in parallel. The theoretically possible large changes in stiffness and dissipation could, at full implementation, enable the design of selectively electroded piezoelectric skins that are spatially and temporally highly adaptive. A tunable negative capacitance circuit is here connected in parallel with a polyvinylidene fluoride (PVDF) membrane (Date et al 2000 J. Appl. Phys. 87 863–8). The goal of this paper is to investigate the extent to which such a circuit may influence the out-of-plane stiffness and dissipation characteristics and the associated vibration response of a PVDF membrane strip. We consider strips with a non-vanishing thickness and under a constant boundary-applied tension. As our analytical and experimental results for harmonic loading show, successful application of the method on out-of-plane dynamics is possible with a correct choice of the circuit parameters, and the out-of-plane stiffness and dissipation and the associated vibration response near the first resonance can be altered noticeably by adjusting the circuit settings

Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing

NARCIS (Netherlands)

Zhan, H.H.; Nötzel, R.; Hamhuis, G.J.; Eijkemans, T.J.; Wolter, J.H.

2003-01-01

Self-assembled InAs quantum dots are grown at low temperature (LT) by molecular beam epitaxy (MBE) on GaAs substrates. The growth is in situ monitored by reflection high-energy electron diffraction, and ex situ evaluated by atomic force microscopy for the morphological properties, and by

New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

NARCIS (Netherlands)

Alonso-González, Pablo; González, Luisa; González, Yolanda; Fuster, David; Fernández-Martinez, Ivan; Martin-Sánchez, Javier; Abelmann, Leon

2007-01-01

This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs

Heterodyne frequency-domain multispectral diffuse optical tomography of breast cancer in the parallel-plane transmission geometry

Energy Technology Data Exchange (ETDEWEB)

Ban, H. Y.; Kavuri, V. C., E-mail: venk@physics.upenn.edu; Cochran, J. M.; Pathak, S.; Chung, S. H.; Yodh, A. G. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Schweiger, M.; Arridge, S. R. [Department of Computer Science, University College London, London WC1E 7JE (United Kingdom); Xie, L. [Department of Radiology, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Busch, D. R. [Division of Neurology, Children’s Hospital of Philadelphia, Philadelphia, Pennsylvania 19104 (United States); Katrašnik, J. [Faculty of Electrical Engineering, University of Ljubljana, Ljubljana 1000 (Slovenia); Lee, K. [Daegu Gyeongbuk Institute of Science and Technology, Daegu 711-813 (Korea, Republic of); Choe, R. [Department of Biomedical Engineering, University of Rochester, Rochester, New York 14642 (United States); Czerniecki, B. J. [Department of Surgery, Hospital of the University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

2016-07-15

Purpose: The authors introduce a state-of-the-art all-optical clinical diffuse optical tomography (DOT) imaging instrument which collects spatially dense, multispectral, frequency-domain breast data in the parallel-plate geometry. Methods: The instrument utilizes a CCD-based heterodyne detection scheme that permits massively parallel detection of diffuse photon density wave amplitude and phase for a large number of source–detector pairs (10{sup 6}). The stand-alone clinical DOT instrument thus offers high spatial resolution with reduced crosstalk between absorption and scattering. Other novel features include a fringe profilometry system for breast boundary segmentation, real-time data normalization, and a patient bed design which permits both axial and sagittal breast measurements. Results: The authors validated the instrument using tissue simulating phantoms with two different chromophore-containing targets and one scattering target. The authors also demonstrated the instrument in a case study breast cancer patient; the reconstructed 3D image of endogenous chromophores and scattering gave tumor localization in agreement with MRI. Conclusions: Imaging with a novel parallel-plate DOT breast imager that employs highly parallel, high-resolution CCD detection in the frequency-domain was demonstrated.

Synthesis of core-shell hematite (α-Fe2O3) nanoplates: Quantitative analysis of the particle structure and shape, high coercivity and low cytotoxicity

Science.gov (United States)

Tadic, Marin; Kopanja, Lazar; Panjan, Matjaz; Kralj, Slavko; Nikodinovic-Runic, Jasmina; Stojanovic, Zoran

2017-05-01

Hematite core-shell nanoparticles with plate-like morphology were synthesized using a one-step hydrothermal synthesis. An XRPD analysis indicates that the sample consist of single-phase α-Fe2O3 nanoparticles. SEM and TEM measurements show that the hematite sample is composed of uniform core-shell nanoplates with 10-20 nm thickness, 80-100 nm landscape dimensions (aspect ratio ∼5) and 3-4 nm thickness of the surface shells. We used computational methods for the quantitative analysis of the core-shell particle structure and circularity shape descriptor for the quantitative shape analysis of the nanoparticles from TEM micrographs. The calculated results indicated that a percentage of the shell area in the nanoparticle area (share [%]) is significant. The determined values of circularity in the perpendicular and oblique perspective clearly show shape anisotropy of the nanoplates. The magnetic properties revealed the ferromagnetic-like properties at room temperature with high coercivity HC = 2340 Oe, pointing to the shape and surface effects. These results signify core-shell hematite nanoparticles' for practical applications in magnetic devices. The synthesized hematite plate-like nanoparticles exhibit low cytotoxicity levels on the human lung fibroblasts (MRC5) cell line demonstrating the safe use of these nanoparticles for biomedical applications.

Two-color single-photon emission from InAs quantum dots: toward logic information management using quantum light.

Science.gov (United States)

Rivas, David; Muñoz-Matutano, Guillermo; Canet-Ferrer, Josep; García-Calzada, Raúl; Trevisi, Giovanna; Seravalli, Luca; Frigeri, Paola; Martínez-Pastor, Juan P

2014-02-12

In this work, we propose the use of the Hanbury-Brown and Twiss interferometric technique and a switchable two-color excitation method for evaluating the exciton and noncorrelated electron-hole dynamics associated with single photon emission from indium arsenide (InAs) self-assembled quantum dots (QDs). Using a microstate master equation model we demonstrate that our single QDs are described by nonlinear exciton dynamics. The simultaneous detection of two-color, single photon emission from InAs QDs using these nonlinear dynamics was used to design a NOT AND logic transference function. This computational functionality combines the advantages of working with light/photons as input/output device parameters (all-optical system) and that of a nanodevice (QD size of ∼ 20 nm) while also providing high optical sensitivity (ultralow optical power operational requirements). These system features represent an important and interesting step toward the development of new prototypes for the incoming quantum information technologies.

Design of a multivariable controller for a CANDU 600 MWe nuclear power plant using the INA method

International Nuclear Information System (INIS)

Roy, N.; Boisvert, J.; Mensah, S.

1984-04-01

The development of large and complex nuclear and process plants requires high-performance control systems, designed with rigorous multivariable techniques. This work is part of an analytical study demonstrating the real potential of multivariable methods. It covers every step in the design of a multi-variable controller for a Gentilly-2 type CANDU 600 MWe nuclear power plant using the Inverse Nyquist Array (INA) method. First the linear design model and its preliminary modifications are described. The design tools are reviewed and the operations required to achieve open-loop diagonal dominance are thoroughly described. Analysis of the closed-loop system is then performed and a feedback matrix is selected to meet the design specifications. The performance of the controller on the linear model is verified by simulation. Finally, the controller is implemented on the reference non-linear model to assess its overall performance. The results show that the INA method can be used successfully to design controllers for large and complex systems

A differentiated plane wave as an electromagnetic vortex

International Nuclear Information System (INIS)

Hannay, J H; Nye, J F

2015-01-01

Differentiating a complex scalar plane wave with respect to its direction produces an isolated straight vortex line and has a natural extension, described in earlier papers, to the vector waves of electromagnetism—a differentiated plane wave (DPW). It epitomizes destructive interference and will be shown to have the local structure of an electromagnetic vortex. In this paper its polarization structure and Poynting vector field are compared and contrasted with that of the family of linear polynomial waves, of which it is a special member. By definition this wider family has a general linear complex vector function of position multiplying a plane wave, but the function must be such that the combination satisfies Maxwell’s equations. This forces translational invariance of the function along the wavevector direction—in other words the wave is ‘non-diffracting’. In a natural sense all possible polarizations are exhibited once only. But the DPW has a distinctive polarization structure only partly explored previously. Both classes of waves share similar Poynting vector fields, which can be ‘elliptic’ (helix-like flow lines) or ‘hyperbolic’, of a repulsive nature, unexpected for a vortex. Both classes can be considered as a limit in the superposition of three closely parallel ordinary plane waves in destructive interference, and this derivation is supplied in full here. (paper)

Crystalline mesoporous tungsten oxide nanoplate monoliths synthesized by directed soft template method for highly sensitive NO{sub 2} gas sensor applications

Energy Technology Data Exchange (ETDEWEB)

Hoa, Nguyen Duc, E-mail: ndhoa@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST) (Viet Nam); Duy, Nguyen Van [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST) (Viet Nam); Hieu, Nguyen Van, E-mail: hieu@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST) (Viet Nam)

2013-02-15

Graphical abstract: Display Omitted Highlights: ► Mesoporous WO{sub 3} nanoplate monoliths were obtained by direct templating synthesis. ► Enable effective accession of the analytic molecules for the sensor applications. ► The WO{sub 3} sensor exhibited a high performance to NO{sub 2} gas at low temperature. -- Abstract: Controllable synthesis of nanostructured metal oxide semiconductors with nanocrystalline size, porous structure, and large specific surface area is one of the key issues for effective gas sensor applications. In this study, crystalline mesoporous tungsten oxide nanoplate-like monoliths with high specific surface areas were obtained through instant direct-templating synthesis for highly sensitive nitrogen dioxide (NO{sub 2}) sensor applications. The copolymer soft template was converted into a solid carbon framework by heat treatment in an inert gas prior to calcinations in air to sustain the mesoporous structure of tungsten oxide. The multidirectional mesoporous structures of tungsten oxide with small crystalline size, large specific surface area, and superior physical characteristics enabled the rapid and effective accession of analytic gas molecules. As a result, the sensor response was enhanced and the response and recovery times were reduced, in which the mesoporous tungsten oxide based gas sensor exhibited a superior response of 21,155% to 5 ppm NO{sub 2}. In addition, the developed sensor exhibited selective detection of low NO{sub 2} concentration in ammonia and ethanol at a low temperature of approximately 150 °C.

Nano-scale mass sensor based on the vibration analysis of a magneto-electro-elastic nanoplate resting on a visco-Pasternak substrate

Science.gov (United States)

Khanmirza, E.; Jamalpoor, A.; Kiani, A.

2017-10-01

In this paper, a magneto-electro-elastic nanoplate resting on a visco-Pasternak medium with added concentrated nanoparticles is presented as a mass nanosensor according to the vibration analysis. The MEE nanoplate is supposed to be subject to external electric voltage and magnetic potential. In order to take into account the size effect on the sensitivity of the sensor, the nonlocal elasticity theory in conjunction with the Kirchhoff plate theory is applied. Partial differential equations are derived by implementing Hamilton's variational principle. Equilibrium equations were solved analytically to determine an explicit closed-form statement for both the damped frequency shift and the relative damped frequency shift using Navier's approach. A genetic algorithm (GA) is employed to achieve the optimal added nanoparticle location to gain the most sensitivity performance of the nanosensor. Numerical studies are performed to illustrate the variation of the sensitivity property corresponding to various values of the number of attached nanoparticles, the mass of each nanoparticle, the nonlocal parameter, external electric voltage and magnetic potential, the aspect ratio, and visco-Pasternak parameters. Some numerical outcomes of this paper show that the minimum value of the damped frequency shift occurs for a certain value of the length-to-thickness ratio. Also, it is shown that the external magnetic and external electric potentials have a different effect on the sensitivity property. It is anticipated that the results reported in this work can be considered as a benchmark in future micro-structures issues.

In situ synthesis of Bi2S3 sensitized WO3 nanoplate arrays with less interfacial defects and enhanced photoelectrochemical performance

Science.gov (United States)

Liu, Canjun; Yang, Yahui; Li, Wenzhang; Li, Jie; Li, Yaomin; Chen, Qiyuan

2016-03-01

In this study, Bi2S3 sensitive layer has been grown on the surface of WO3 nanoplate arrays via an in situ approach. The characterization of samples were carried out using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and ultraviolet-visible absorption spectroscopy (UV-vis). The results show that the Bi2S3 layer is uniformly formed on the surface of WO3 nanoplates and less interfacial defects were observed in the interface between the Bi2S3 and WO3. More importantly, the Bi2S3/WO3 films as photoanodes for photoelectrochemical (PEC) cells display the enhanced PEC performance compared with the Bi2S3/WO3 films prepared by a sequential ionic layer adsorption reaction (SILAR) method. In order to understand the reason for the enhanced PEC properties, the electron transport properties of the photoelectrodes were studied by using the transient photocurrent spectroscopy and intensity modulated photocurrent spectroscopy (IMPS). The Bi2S3/WO3 films prepared via an in situ approach have a greater transient time constant and higher electron transit rate. This is most likely due to less interfacial defects for the Bi2S3/WO3 films prepared via an in situ approach, resulting in a lower resistance and faster carrier transport in the interface between WO3 and Bi2S3.

High-frequency domain wall excitations in magnetic garnet films with in-plane magnetization

International Nuclear Information System (INIS)

Synogach, V.T.; Doetsch, H.

1996-01-01

Magnetic garnet films of compositions (YBi) 3 Fe 5 O 12 and (LuBi) 3 Fe 5 O 12 are grown by liquid-phase epitaxy on [110]- and [100]-oriented substrates of gadolinium gallium garnet, respectively. All films have in-plane magnetization. 180 degree and 90 degree domain walls in these films are studied by microwave technique. In addition to the known low-frequency mode of wall translation new multiple resonant modes of both 90 degree and 180 degree domain walls with very small linewidth (4.2 MHz) are observed at frequencies near 1 GHz. Resonances are effectively excited by an rf magnetic field which is parallel or perpendicular to the wall plane. Resonance frequencies are shown to have nonlinear dispersion dependence on the mode number: they decrease with increasing in-plane magnetic field normal to the wall plane. copyright 1996 The American Physical Society

BIAYA KLAIM INA CBGS DAN BIAYA RIIL PENYAKIT KATASTROPIK RAWAT INAP PESERTA JAMKESMAS DI RUMAH SAKIT STUDI DI 10 RUMAH SAKIT MILIK KEMENTERIAN KESEHATAN JANUARI–MARET 2012

Directory of Open Access Journals (Sweden)

Wasis Budiarto

2013-08-01

Full Text Available Latar belakang: Implementasi sistem INA-CBGs bagi pasien penyakit katastropik (jantung, kanker, stroke peserta Jamkesmas di rumah sakit, memberikan konsekuensi di satu pihak bahwa penyakit katastropik merupakan ancaman terhadap membengkaknya pembiayaan Jamkesmas di masa datang, sedangkan di pihak lain, rumah sakit merasakan bahwa biaya penggantian klaim INA CBGs lebih rendah dari tarif yang berlaku dirumah sakit. Tujuan: Tujuan penelitian ini untuk memperoleh gambaran biaya pengobatan penyakit katastropik dan perbandingan pembiayaan klaim berdasarkan INA-DRGs dengan biaya pengobatan riil penyakit katastropik dirumah sakit. Jenis penelitian adalah deskriptif menurut perspektif rumah sakit. Metode: Metode pengambilan data dilakukan secara retrospektif yang diambil dari penelusuran dokumen catatan medik pasien penyakit katastropik di 10 rumah sakit selama 3 bulan (Januari–Maret 2012. Analisis data dilakukan secara deskriptif. Hasil: Hasil penelitian menunjukkan bahwa pasien Jamkesmas yang dirawat dengan kasus katastropik terdiri dari penyakit jantung sebesar37,11%, penyakit kanker 23,54% dan sisanya sebesar 39,35% pasien penyakit stroke. Kesimpulan: Biaya pengobatan rawat inap berdasarkan tarif rumah sakit kelas A jauh lebih besar dibandingkan kelas B dan RS Khusus, biaya klaim berdasarkan INA-CBGs jauh lebih besar di rumah sakit kelas A dibanding kelas B dan RS Khusus. Komponen biaya yang banyak peruntukannya adalah biaya akomodasi, tindakan ruangan, pemeriksaan laboratorium, tindakan intervensi nonbedah untuk jantung, tindakan operasi untuk kanker serta biaya obat-obatan. Biaya penggantian klaim penyakit katastropik berdasarkan INA CBGs lebih besar dibandingkan dengan biaya riil berdasarkan tarif rumah sakit, sehingga untuk penyakit katastropik rumah sakit tidak merugi. Untuk itu pelaksanaan kebijakan rujukan berjenjang bagi peserta Jamkesmas harus diawasi secara ketat sehingga pelayanan kesehatan bagi penduduk miskin menjadi lebih terjamin

Segmented focal plane detector for light and heavy ions

International Nuclear Information System (INIS)

Wolfs, F.L.H.; Bryan, D.C.; Kurz, K.L.; Herrick, D.M.; Perera, P.A.A.; White, C.A.

1992-01-01

A segmented focal plane detector for an Enge split-pole spectrograph has been developed for the study of breakup reactions at very low relative energies. It consists of a 61 cm long segmented position-sensitive parallel plate avalanche counter backed by a large Bragg curve detector. A segmented plastic scintillator is mounted behind the anode of the Bragg curve detector and is used for particle identification of low-ionizing particles. The dead space between the two sections of the focal plane detector is 2.5 mm. The intrinsic position resolution of the detector is 1 mm. The intrinsic energy resolution depends on the energy of the incident ion and can be as good as 0.55%. The nuclear charge and mass resolutions are 0.3 e and 0.3 u, respectively. (orig.)

Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

Kong, Lingmin, E-mail: konglm@qq.com [School of Marine Science and Technology, Zhejiang Ocean University, Zhoushan 316000 (China); Sun, Wei [SEM School of Electromechanical Engineering, Weifang Engineering Vocational College, Qingzhou 262500 (China); Feng, Zhe Chuan, E-mail: zcfeng@nut.edu.tw [Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei 106-17, Taiwan (China); Xie, Sheng [School of Electronic and Information Engineering, Tianjin University, Tianjin 300072 (China); Zhou, Yunqing; Wang, Rui; Zhang, Cunxi; Zong, Zhaocun; Wang, Hongxia; Qiao, Qian [Department of Physics, Zhejiang Ocean University, Zhoushan 316000 (China); Wu, Zhengyun [Department of Physics, Xiamen University, Xiamen 361005 China (China)

2014-07-01

Two kinds of self-assembled quantum dots (QDs) embedded within InGaAs/GaAs quantum wells were grown by molecular beam epitaxy: one was capped with an InAlAs strain reducing (SR) layer, while the other was not. Their emission dynamics was investigated by time-resolved and temperature dependent (TD) photoluminescence (PL) measurements. A significant redshift can be observed in the emission peak position of InAs QDs with thin InAlAs SR cap layer, which results from SR effects. Different behaviors of the integrated PL intensity for the samples with or without InAlAs layer may be ascribed to the reduced carrier transition at higher temperature for the higher energy barrier of the InAlAs layer, and the TD mode of carrier migration. The PL decay time of quantum dots grown with InAlAs layer was much longer than that without the layer, which implies that the InAlAs layer with higher energy barrier may enhance the quantum restriction of carriers in InAs QDs. These observations are discussed from the viewpoint of strain compensation and potential barrier variation with SR layers. Our experiments also demonstrate that the main mode of carrier migration is quantum tunneling effect at lower temperature, while it is quantum transition at higher temperature. The results demonstrate the importance of InAlAs SR layer for the optical quality of InAs QDs. - Highlights: • InAs quantum dots (QDs) were grown on GaAs. • A thin InAlAs layer was grown on InAs QDs. • Temperature dependent photoluminescence (PL) and time-resolved PL were carried out. • Both a redshift and a double exponential decay of PL emission were generated by the InAlAs layer.

Parallel magnetotransport in multiple quantum well structures

International Nuclear Information System (INIS)

Sheregii, E.M.; Ploch, D.; Marchewka, M.; Tomaka, G.; Kolek, A.; Stadler, A.; Mleczko, K.; Strupinski, W.; Jasik, A.; Jakiela, R.

2004-01-01

The results of investigations of parallel magnetotransport in AlGaAs/GaAs and InGaAs/InAlAs/InP multiple quantum wells structures (MQW's) are presented in this paper. The MQW's were obtained by metalorganic vapour phase epitaxy with different shapes of QW, numbers of QW and levels of doping. The magnetotransport measurements were performed in wide region of temperatures (0.5-300 K) and at high magnetic fields up to 30 T (B is perpendicular and current is parallel to the plane of the QW). Three types of observed effects are analyzed: quantum Hall effect and Shubnikov-de Haas oscillations at low temperatures (0.5-6 K) as well as magnetophonon resonance at higher temperatures (77-300 K)

Making Mn substitutional impurities in InAs using a scanning tunneling microscope.

Science.gov (United States)

Song, Young Jae; Erwin, Steven C; Rutter, Gregory M; First, Phillip N; Zhitenev, Nikolai B; Stroscio, Joseph A

2009-12-01

We describe in detail an atom-by-atom exchange manipulation technique using a scanning tunneling microscope probe. As-deposited Mn adatoms (Mn(ad)) are exchanged one-by-one with surface In atoms (In(su)) to create a Mn surface-substitutional (Mn(In)) and an exchanged In adatom (In(ad)) by an electron tunneling induced reaction Mn(ad) + In(su) --> Mn(In) + In(ad) on the InAs(110) surface. In combination with density-functional theory and high resolution scanning tunneling microscopy imaging, we have identified the reaction pathway for the Mn and In atom exchange.

Parallel resonant converter with LLC-type commutation

Science.gov (United States)

Lee, C. Q.; Liu, Rui; Batarseh, Issa

1989-11-01

It is shown that by using a proper transformation of state variables, the third-order system of the parallel resonant converter (PRC) with LLC-type commutation can be analyzed by means of a two-dimensional state-plane diagram. A set of characteristic curves which can be used for the converter design is derived from the analysis. It is shown from these curves that the converter possesses more desirable features than the conventional PRC.

A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy

Science.gov (United States)

Sharma, Nandlal; Reuter, Dirk

2017-11-01

Two vertically stacked quantum dots that are electronically coupled, so called quantum dot molecules, are of great interest for the realization of solid state building blocks for quantum communication networks. We present a modified gradient approach to realize InAs quantum dot molecules with a low areal density so that single quantum dot molecules can be optically addressed. The individual quantum dot layers were prepared by solid source molecular beam epitaxy depositing InAs on GaAs(100). The bottom quantum dot layer has been grown without substrate rotation resulting in an In-gradient across the surface, which translated into a density gradient with low quantum dot density in a certain region of the wafer. For the top quantum dot layer, separated from the bottom quantum dot layer by a 6 nm thick GaAs barrier, various InAs amounts were deposited without an In-gradient. In spite of the absence of an In-gradient, a pronounced density gradient is observed for the top quantum dots. Even for an In-amount slightly below the critical thickness for a single dot layer, a density gradient in the top quantum dot layer, which seems to reproduce the density gradient in the bottom layer, is observed. For more or less In, respectively, deviations from this behavior occur. We suggest that the obvious influence of the bottom quantum dot layer on the growth of the top quantum dots is due to the strain field induced by the buried dots.

A differentiated plane wave: its passage through a slab

International Nuclear Information System (INIS)

Hannay, J H; Nye, J F

2013-01-01

Differentiating a monochromatic uniform plane electromagnetic wavefield with respect to its direction produces, from a field that is completely lacking in localized specific features, one that contains a straight vortex-like line, a ‘C-line’ of defined circular polarization. There is also a second separate C-line of opposite handedness; indeed, in a sense, a straight line of every polarization is realized. Because of its primitive construction it is analytically simple to study the passage of a differentiated wave obliquely through a plane interface into a medium of different refractive index, to trace its C-line. This was done in an earlier paper. Here we extend the method to passage through a parallel-sided transparent slab. There are multiple reflections within the slab, as in a Fabry–Pérot interferometer. The exiting wave, as a single differentiated plane wave, has a straight oblique C-line. Inside the slab, and in front of it, there is wave interference. The result is a coiled, helix-like, C-line in front of the slab and another inside it. The two coils wrap around separate hyperboloids of one sheet, like cooling towers. The emerging straight C-line is shifted (with respect to a C-line in a notional undisturbed incident plane wave) both in the plane of incidence and transversely to it, and the second C-line behaves similarly. The analysis is exact and could be extended in a straightforward way to a general stratified medium. (paper)

Nonlinear absorption and receptivity of the third order in InAs infrared region

International Nuclear Information System (INIS)

Musayev, M.A.

2005-01-01

Nonlinear absorption and receptivity of the third order and coefficient nonlinear absorption in InAs n-type with different degree of alloying was measured. Obtained score considerably exceed sense, calculated on the basis of the models describing nonlinear receptivity of electrons, situated in the nonparabolic area of conductivity. It was shown that, observable deviations withdraw; if in the calculation apply energy dissipation of electrons. Growth of the efficiency under four-wave interaction in low-energy-gap semiconductors confines nonlinear absorption of interacting waves

Texture change through film thickness and off-axis accommodation of (0 0 2) planes

International Nuclear Information System (INIS)

Shetty, A.R.; Karimi, A.

2011-01-01

We present our recent experimental results on the formation of off-axis texture and crystallographic tilting of crystallites that take place in thin film of transition metal nitrides. For this purpose, the microstructural development of TiAlN film was studied, specially the change in texture with film thickness. Fiber texture was measured using θ-2θ and pole figure X-ray diffraction (XRD), while scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to observe the microstructure and changes in texture with thickness. The sin 2 ψ method was applied to determine the stresses on (1 1 1) and (0 0 2) plane. With deposition parameters chosen, the growth texture mechanism is discussed in three different stages of film growth. Surface energy minimization at low thickness leads to the development of (0 0 2) orientation. On the other hand, the competitive growth promotes the growth of (1 1 1) planes parallel to film surface at higher thickness. However, contrary to the prediction of growth models, the (0 0 2) grains are not completely overlapped by (1 1 1) grains at higher thickness. Rather the (0 0 2) grains still constitute the surface, but are tilted away from the substrate normal showing substantial in-plane alignment to allow the (1 1 1) planes remain parallel to film surface. Intrinsic stress along (1 1 1) and (0 0 2) shows a strong dependence with preferred orientation. The stress level in (0 0 2) grains which was compressive at low thickness changes to tensile at higher thickness. This change in the nature of stress allows the (0 0 2) planes to tilt away in order to promote the growth of 〈1 1 1〉 parallel to film normal and to minimize the overall energy of system due to high compressive stress stored in the (1 1 1) grains. The change in surface morphology with thickness was observed using SEM. An increase in surface roughness with film thickness was observed which indicates the development of (1 1 1) texture parallel to film

Effect of surface density silver nanoplate films toward surface-enhanced Raman scattering enhancement for bisphenol A detection

Science.gov (United States)

Bakar, N. A.; Salleh, M. M.; Umar, A. A.; Shapter, J. G.

2018-03-01

This paper reports a study on surface-enhanced Raman scattering (SERS) phenomenon of triangular silver nanoplate (NP) films towards bisphenol A (BPA) detection. The NP films were prepared using self-assembly technique with four different immersion times; 1 hour, 2 hours, 5 hours, and 8 hours. The SERS measurement was studied by observing the changes in Raman spectra of BPA after BPA absorbed on the NP films. It was found that the Raman intensity of BPA peaks was enhanced by using the prepared SERS substrates. This is clearly indicated that these SERS silver substrates are suitable to sense industrial chemical and potentially used as SERS detector. However, the rate of SERS enhancement is depended on the distribution of NP on the substrate surface.

Acoustic streaming in the transducer plane in ultrasonic particle manipulation devices.

Science.gov (United States)

Lei, Junjun; Glynne-Jones, Peter; Hill, Martyn

2013-06-07

In acoustofluidic manipulation and sorting devices, Rayleigh streaming flows are typically found in addition to the acoustic radiation forces. However, experimental work from various groups has described acoustic streaming that occurs in planar devices in a plane parallel to the transducer face. This is typically a four-quadrant streaming pattern with the circulation parallel to the transducer. Understanding its origins is essential for creating designs that limit or control this phenomenon. The cause of this kind of streaming pattern has not been previously explained as it is different from the well-known classical streaming patterns such as Rayleigh streaming and Eckart streaming, whose circulation planes are generally perpendicular to the face of the acoustic transducer. In order to gain insight into these patterns we present a numerical method based on Nyborg's limiting velocity boundary condition that includes terms ignored in the Rayleigh analysis, and verify its predictions against experimental PIV results in a simple device. The results show that the modelled particle trajectories match those found experimentally. Analysis of the dominant terms in the driving equations shows that the origin of this kind of streaming pattern is related to the circulation of the acoustic intensity.

Theoretical interpretation of the electron mobility behavior in InAs nanowires

International Nuclear Information System (INIS)

Marin, E. G.; Ruiz, F. G.; Godoy, A.; Tienda-Luna, I. M.; Martínez-Blanque, C.; Gámiz, F.

2014-01-01

This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

Theoretical interpretation of the electron mobility behavior in InAs nanowires

Energy Technology Data Exchange (ETDEWEB)

Marin, E. G., E-mail: egmarin@ugr.es; Ruiz, F. G., E-mail: franruiz@ugr.es; Godoy, A.; Tienda-Luna, I. M.; Martínez-Blanque, C.; Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada (Spain)

2014-11-07

This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

Improvement of the optical quality of site-controlled InAs quantum dots by a double stack growth technique in wet-chemically etched holes

Energy Technology Data Exchange (ETDEWEB)

Pfau, Tino Johannes; Gushterov, Aleksander; Reithmaier, Johann-Peter [Technische Physik, INA, Universitaet Kassel (Germany); Cestier, Isabelle; Eisenstein, Gadi [Electrical Engineering Dept., Technion, Haifa (Israel); Linder, Evgany; Gershoni, David [Solid State Institute and Physics Dept., Technion, Haifa (Israel)

2010-07-01

The optimization of the wet-chemically etching of holes and a special MBE growth stack technique allows enlarging the site-control of low density InAs QDs on GaAs substrates up to a buffer layer thickness of 55 nm. The strain of InAs QDs, grown in the etched holes, reduces the hole closing, so that a pre-patterned surface is conserved for the second QD layer. The distance of 50 nm GaAs between the two QD layers exceeds drastically the maximum vertical alignment based on pure strain coupling (20 nm). Compared to stacks with several QD layers, this method avoids electronic coupling between the different QD layers and reduces the problems to distinguish the dots of different layers optically. Confocal microphotoluminescence reveals a significant diminution of the low temperature photoluminescence linewidth of the second InAs QD layer to an average value of 505{+-}53 {mu}eV and a minimum width of 460 {mu}eV compared to 2 to 4 meV for QDs grown on thin buffer layers. The increase of the buffer layer thickness decreases the influence of the surface defects caused by prepatterning.

Influence of polymer swelling and dissolution into food simulants on the release of graphene nanoplates and carbon nanotubes from poly(lactic) acid and polypropylene composite films

OpenAIRE

Velichkova, Hristiana; Petrova, Ivanka; Kotsilkov, Stanislav; Ivanov, Evgeni; Vitanov, Nikolay K.; Kotsilkova, Rumiana

2017-01-01

The study compared the effects of swelling and dissolution of a matrix polymer by food simulants on the release of graphene nanoplates (GNPs) and multiwall carbon nanotubes (MWCNTs) from poly(lactic) acid (PLA) and polypropylene (PP) composite films. The total migration was determined gravimetrically in the ethanol and acetic acid food simulants at different time and temperature conditions, while migrants were detected by laser diffraction analysis and transmission electron microscopy. Swelli...

The Effect of INA [(R)-1-O-(1-Pyrenylmethyl)Glycerol] Insertions on the Structure and Biological Activity of a G-Quadruplex from a Critical Kras G-Rich Sequence

DEFF Research Database (Denmark)

Cogoi, Susanna; Paramasivan, Manikandan; Xodo, Luigi E.

2007-01-01

Quadruplex-forming oligonucleotides containing INA [(R)-1-O-(1-pyrenylmethyl)glycerol] insertions have been designed and studied for their capacity to inhibit the expression of the KRAS oncogene in pancreatic adenocarcinoma cells. It is found that INA can influence the folding topology of the G-q...

Intrinsic quantum dots in InAs nanowires

International Nuclear Information System (INIS)

Weis, Karl Martin Darius

2013-01-01

This work deals with InAs nanowire field effect transistors in back gate configuration. In such devices, quantum dots can form at low temperatures in the order of magnitude of a few Kelvin. These dots are henceforth referred to as intrinsic as they are not intentionally defined by electrodes. For the interpretation of their stability diagrams, a thorough knowledge of the structure and transport properties of the nanowires is required. Therefore, first of all, the influence of growth method and doping on the transport properties is studied at room temperature. The wires are grown by two types of metal-organic vapour phase epitaxy: a selective-area (SA-MOVPE) and an Au-catalyzed vapour-liquid-solid method (VLS-MOVPE). Transport data shows that the background doping of VLS-MOVPE wires is higher than for SA-MOVPE wires, but the variability of the transport properties is lower. The polytypism of the SA-MOVPE wires (they are composed of wurtzite and zinc blende segments) is a possible explanation for the second observation. Furthermore, it is shown that the measured transport properties significantly depend on the dielectric environment of the nanowires and on the way the electrical measurements are done (two- or four-terminal configuration). The conductivity is tunable via doping and the gate voltage. Conductivity measurements in the temperature range from 10 K to 300 K show that different transport regimes can occur (partially metallic behaviour for sufficiently high conductivity, otherwise purely semiconducting behaviour). This is attributed to different positions of the Fermi level and thus, a different effect of potential fluctuations. If conductivity and temperature are sufficiently low, the onset of Coulomb blockade is observed for semiconducting samples. It is even possible to tune the very same sample to different regimes via the gate voltage. The semiconducting behaviour observed in many samples contradicts the Thomas-Fermi theory. This is attributed to the

ONETEP: linear-scaling density-functional theory with plane-waves

International Nuclear Information System (INIS)

Haynes, P D; Mostof, A A; Skylaris, C-K; Payne, M C

2006-01-01

This paper provides a general overview of the methodology implemented in onetep (Order-N Electronic Total Energy Package), a parallel density-functional theory code for largescale first-principles quantum-mechanical calculations. The distinctive features of onetep are linear-scaling in both computational effort and resources, obtained by making well-controlled approximations which enable simulations to be performed with plane-wave accuracy. Titanium dioxide clusters of increasing size designed to mimic surfaces are studied to demonstrate the accuracy and scaling of onetep

Auger recombination in p-type InAs and in Gasub(x)Insub(1-x)As solid solutions

International Nuclear Information System (INIS)

Zotova, N.V.; Yassievich, I.N.

1977-01-01

The probability of the Auger recombination in p-type semiconductors, which is accompanied by transition of the second hole into the zone, splitted by spin-orbital interaction, was calculated. The above process is effective when the energy of spin-orbital splitting off Δ is close to the forbidden zone energy Esub(g), which takes place in the case of InAs, GaSb and solid solutions based on these compounds. The calculation is performed for the non-degenerate hole gas at a finite difference of Esub(g) - Δ. By means of the study of radiative recombination in InAs and Gasub(x)Insub(1-x)As solid solutions with small contents of GaAs (0 17 cm -3 . It is found that the quantum yield of radiative recombination increases sharply in Gasub(x)Insub(1-x)As solid solutions with the increase of x, which is associated with the increase of the difference of Esub(g) - Δ; the radiative recombination intensity increases in correspondence with the theoretical calculation made

SnS{sub 2} nanoplates embedded in 3D interconnected graphene network as anode material with superior lithium storage performance

Energy Technology Data Exchange (ETDEWEB)

Tang, Hongli [Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105 (China); Qi, Xiang, E-mail: xqi@xtu.edu.cn [Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105 (China); Han, Weijia; Ren, Long; Liu, Yundan [Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105 (China); Wang, Xingyan, E-mail: xywangxtu@163.com [Department of Environmental Science and Engineering, College of Chemical Engineering, Xiangtan University, Xiangtan 411105 (China); Zhong, Jianxin [Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105 (China)

2015-11-15

Graphical abstract: Schematic formation process of 3D interconnected SnS{sub 2}/graphene composite, and its superior lithium storage performance. - Highlights: • 3D graphene network embedded with SnS{sub 2} is synthesized by a facile two-step method. • This structure produces a synergistic effect between graphene and SnS{sub 2} nanoplates. • High capacity, excellent cycle performance and good rate capability are achieved. - Abstract: Three-dimensional (3D) interconnected graphene network embedded with uniformly distributed tin disulfide (SnS{sub 2}) nanoplates was prepared by a facile two-step method. The microstructures and morphologies of the SnS{sub 2}/graphene nanocomposite (SSG) are experimentally confirmed by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Using the as-prepared SSG as an anode material for lithium batteries, its electrochemical performances were investigated by cyclic voltammograms (CV), charge/discharge tests, galvanostatic cycling performance and AC impedance spectroscopy. The results demonstrate that the as-prepared SSG exhibits excellent cycling performance with a capacity of 1060 mAh g{sup −1} retained after 200 charge/discharge cycles at a current density of 100 mA g{sup −1}, also a superior rate capability of 670 mAh g{sup −1} even at such a high current density of 2000 mA g{sup −1}. This favorable performance can be attributed to the unique 3D interconnected architecture with great electro-conductivity and its intimate contact with SnS{sub 2}. Our results indicate a potential application of this novel 3D SnS{sub 2}/graphene nanocomposite in lithium-ion battery.

Preliminary embryological study of the radiological concept of retroperitoneal interfascial planes: what are the interfascial planes?

Science.gov (United States)

Ishikawa, Kazuo; Nakao, Shota; Murakami, Gen; Rodríguez-Vázquez, Jose Francisco; Matsuoka, Tetsuya; Nakamuro, Makoto; Shimazu, Takeshi

2014-12-01

Recently, the radiological concept of retroperitoneal interfascial planes has been widely accepted to explain the extension of retroperitoneal pathologies. This study aimed to explore embryologically based corroborative evidence, which remains to be elucidated, for this concept. Using serial or semi-serial transverse sections from 29 human fetuses at the 5th-25th week of fetal age, we microscopically observed the development of the retroperitoneal fasciae and other structures in the retroperitoneal connective tissue. A hypothesis for the formation of the interfascial planes was generated from the developmental study and analysis of retroperitoneal fasciae in computed tomography images from 224 patients. Whereas the loose connective tissue was uniformly distributed in the retroperitoneum by the 9th week, the primitive renal and transversalis fasciae appeared at the 10th-12th week, as previous research has noted. By the 23rd week, the renal fascia, transversalis fascia, and primitive adipose tissue of the flank pad emerged. In addition, the primitive lateroconal fascia, which runs parallel to and close to the posterior renal fascia, emerged between the renal fascia and the adipose tissue of the flank pad. Conversely, pre-existing loose connective tissue was sandwiched between the opposing fasciae and was compressed and narrowed by the developing organs and fatty tissues. Through this developmental study, we provided the hypothesis that the compressed loose connective tissue and both opposed fasciae compose the interfascial planes. Analysis of the thickened retroperitoneal fasciae in computed tomography images supported this hypothesis. Further developmental or histological studies are required to verify our hypothesis.

Direct radiocarbon dates for Vindija G1 and Velika Pećina Late Pleistocene hominid remains

Science.gov (United States)

Smith, Fred H.; Trinkaus, Erik; Pettitt, Paul B.; Karavanić, Ivor; Paunović, Maja

1999-01-01

New accelerator mass spectrometry radiocarbon dates taken directly on human remains from the Late Pleistocene sites of Vindija and Velika Pećina in the Hrvatsko Zagorje of Croatia are presented. Hominid specimens from both sites have played critical roles in the development of current perspectives on modern human evolutionary emergence in Europe. Dates of ≈28 thousand years (ka) before the present (B.P.) and ≈29 ka B.P. for two specimens from Vindija G1 establish them as the most recent dated Neandertals in the Eurasian range of these archaic humans. The human frontal bone from Velika Pećina, generally considered one of the earliest representatives of modern humans in Europe, dated to ≈5 ka B.P., rendering it no longer pertinent to discussions of modern human origins. Apart from invalidating the only radiometrically based example of temporal overlap between late Neandertal and early modern human fossil remains from within any region of Europe, these dates raise the question of when early modern humans first dispersed into Europe and have implications for the nature and geographic patterning of biological and cultural interactions between these populations and the Neandertals. PMID:10535913

Spin-lattice relaxation times and knight shift in InSb and InAs

International Nuclear Information System (INIS)

Braun, P.; Grande, S.

1976-01-01

For a dominant contact interaction between nuclei and conduction electrons the relaxation rate is deduced. The extreme cases of degenerate and non-degenerate semiconductors are separately discussed. At strong degeneracy the product of the Knight shift and relaxation time gives the Korringa relation for metals. Measurements of the NMR spin-lattice relaxation times of 115 InSb and 115 InAs were made between 4.2 and 300 K for strongly degenerated samples. The different relaxation mechanisms are discussed and the experimental and theoretical results are compared. (author)

Direct-Bandgap InAs Quantum-Dots Have Long-Range Electron--Hole Exchange Whereas Indirect Gap Si Dots Have Short-Range Exchange

International Nuclear Information System (INIS)

Juo, J.W.; Franceschetti, A.; Zunger, A.

2009-01-01

Excitons in quantum dots manifest a lower-energy spin-forbidden 'dark' state below a spin-allowed 'bright' state; this splitting originates from electron-hole (e-h) exchange interactions, which are strongly enhanced by quantum confinement. The e-h exchange interaction may have both a short-range and a long-range component. Calculating numerically the e-h exchange energies from atomistic pseudopotential wave functions, we show here that in direct-gap quantum dots (such as InAs) the e-h exchange interaction is dominated by the long-range component, whereas in indirect-gap quantum dots (such as Si) only the short-range component survives. As a result, the exciton dark/bright splitting scales as 1/R 2 in InAs dots and 1/R 3 in Si dots, where R is the quantum-dot radius.

Colliding almost-plane gravitational waves: Colliding plane waves and general properties of almost-plane-wave spacetimes

International Nuclear Information System (INIS)

Yurtsever, U.

1988-01-01

It is well known that when two precisely plane-symmetric gravitational waves propagating in an otherwise flat background collide, they focus each other so strongly as to produce a curvature singularity. This paper is the first of several devoted to almost-plane gravitational waves and their collisions. Such waves are more realistic than plane waves in having a finite but very large transverse size. In this paper we review some crucial features of the well-known exact solutions for colliding plane waves and we argue that one of these features, the breakdown of ''local inextendibility'' can be regarded as nongeneric. We then introduce a new framework for analyzing general colliding plane-wave spacetimes; we give an alternative proof of a theorem due to Tipler implying the existence of singularities in all generic colliding plane-wave solutions; and we discuss the fact that the recently constructed Chandrasekhar-Xanthopoulos colliding plane-wave solutions are not strictly plane symmetric and thus do not satisfy the conditions and the conclusion of Tipler's theorem

Electrical impedance along connective tissue planes associated with acupuncture meridians

Directory of Open Access Journals (Sweden)

Hammerschlag Richard

2005-05-01

Full Text Available Abstract Background Acupuncture points and meridians are commonly believed to possess unique electrical properties. The experimental support for this claim is limited given the technical and methodological shortcomings of prior studies. Recent studies indicate a correspondence between acupuncture meridians and connective tissue planes. We hypothesized that segments of acupuncture meridians that are associated with loose connective tissue planes (between muscles or between muscle and bone visible by ultrasound have greater electrical conductance (less electrical impedance than non-meridian, parallel control segments. Methods We used a four-electrode method to measure the electrical impedance along segments of the Pericardium and Spleen meridians and corresponding parallel control segments in 23 human subjects. Meridian segments were determined by palpation and proportional measurements. Connective tissue planes underlying those segments were imaged with an ultrasound scanner. Along each meridian segment, four gold-plated needles were inserted along a straight line and used as electrodes. A parallel series of four control needles were placed 0.8 cm medial to the meridian needles. For each set of four needles, a 3.3 kHz alternating (AC constant amplitude current was introduced at three different amplitudes (20, 40, and 80 μAmps to the outer two needles, while the voltage was measured between the inner two needles. Tissue impedance between the two inner needles was calculated based on Ohm's law (ratio of voltage to current intensity. Results At the Pericardium location, mean tissue impedance was significantly lower at meridian segments (70.4 ± 5.7 Ω compared with control segments (75.0 ± 5.9 Ω (p = 0.0003. At the Spleen location, mean impedance for meridian (67.8 ± 6.8 Ω and control segments (68.5 ± 7.5 Ω were not significantly different (p = 0.70. Conclusion Tissue impedance was on average lower along the Pericardium meridian, but not

Uniaxial in-plane magnetization of iron nanolayers grown within an amorphous matrix

Energy Technology Data Exchange (ETDEWEB)

Ghafari, M., E-mail: mohammad.ghafari@kit.edu; Hahn, H. [Herbert Gleiter Institute of Nanoscience, Nanjing University of Science and Technology, Nanjing 210094 (China); Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Mattheis, R. [Leibniz Institute for Photonic Technology IPHT, Jena (Germany); McCord, J. [Institute for Materials Science, Kiel University Kiel, Kaiserstraße 2, 24143 Kiel (Germany); Brand, R. A. [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Macedo, W. A. A. [Laboratório de Física Aplicada, Centro de Desenvolvimento da Tecnologia Nuclear (CDTN), 31270-901 Belo Horizonte, MG (Brazil)

2014-08-18

Conversion electron Mössbauer spectroscopy is used to determine the magnetic ground state at zero magnetic field of four-monolayer thick amorphous iron layers as part of a CoFeB-Fe multilayer stack. By comparing the intensities of the magnetic hyperfine field, an easy in-plane axis of the amorphous embedded Fe layer is verified, which is collinear to the uniaxial anisotropy axis of the neighboring amorphous CoFeB. Despite the soft magnetic character of the Fe layers, external fields up to 4 T perpendicular to the film plane are insufficient to completely align the embedded Fe moments parallel to the magnetic field due to a local disorder of the magnetic moments of the Fe atoms.

Nonlinear absorption and transmission properties of Ge, Te and InAs using tuneable IR FEL

Energy Technology Data Exchange (ETDEWEB)

Amirmadhi, F.; Becker, K.; Brau, C.A. [Vanderbilt Univ., Nashville, TN (United States)

1995-12-31

Nonlinear absorption properties of Ge, Te and InAs are being investigated using the transmission of FEL optical pulses through these semiconductors (z-scan method). Wavelength, intensity and macropulse dependence are used to differentiate between two-photon and free-carrier absorption properties of these materials. Macropulse dependence is resolved by using a Pockles Cell to chop the 4-{mu}s macropulse down to 100 ns. Results of these experiments will be presented and discussed.

In-plane and cross-plane thermal conductivities of molybdenum disulfide

International Nuclear Information System (INIS)

Ding, Zhiwei; Pei, Qing-Xiang; Zhang, Yong-Wei; Jiang, Jin-Wu

2015-01-01

We investigate the in-plane and cross-plane thermal conductivities of molybdenum disulfide (MoS 2 ) using non-equilibrium molecular dynamics simulations. We find that the in-plane thermal conductivity of monolayer MoS 2 is about 19.76 W mK −1 . Interestingly, the in-plane thermal conductivity of multilayer MoS 2 is insensitive to the number of layers, which is in strong contrast to the in-plane thermal conductivity of graphene where the interlayer interaction strongly affects the in-plane thermal conductivity. This layer number insensitivity is attributable to the finite energy gap in the phonon spectrum of MoS 2 , which makes the phonon–phonon scattering channel almost unchanged with increasing layer number. For the cross-plane thermal transport, we find that the cross-plane thermal conductivity of multilayer MoS 2 can be effectively tuned by applying cross-plane strain. More specifically, a 10% cross-plane compressive strain can enhance the thermal conductivity by a factor of 10, while a 5% cross-plane tensile strain can reduce the thermal conductivity by 90%. Our findings are important for thermal management in MoS 2 based nanodevices and for thermoelectric applications of MoS 2 . (paper)

20 CFR 668.700 - What process must an INA grantee use to plan its employment and training services?

Science.gov (United States)

2010-04-01

... it uses to plan other activities and services. (b) However, in the process of preparing its Two Year... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What process must an INA grantee use to plan its employment and training services? 668.700 Section 668.700 Employees' Benefits EMPLOYMENT AND...

Singularity kinematics principle and position-singularity analyses of the 6-3 Stewart-Gough parallel manipulators

International Nuclear Information System (INIS)

Cao, Yi; Zhou, Hui; Li, Baokun; Shen, Long

2011-01-01

This paper presents a new principle and method of kinematics to analyze the singularity of Stewart-Gough parallel manipulators and addresses the property identification of the position-singularity loci of the 6-3 Stewart-Gough manipulators for special orientations. Based on the kinematic relationship of a rigid body, a necessary and sufficient condition that three velocities of three non-collinear points in a moving rigid body can determine a screw motion is addressed and some typical singular configurations of the 6-3 Stewart-Gough parallel manipulators are also addressed in detail. With the above-mentioned condition, a symbolic analytical polynomial expression of degree three in the moving platform position parameters, representing the position-singularity locus of the 6-3 Stewart-Gough manipulators for special orientations, is derived: and the property identification of the position-singularity loci of the 6-3 Stewart-Gough manipulator for these special orientations is investigated at length. It is shown that position-singularity loci of the 6-3 Stewart-Gough parallel manipulator for these special orientations will be a plane and a hyperbolic paraboloid, even three intersecting planes

Mieloencefalite protozoária eqüina (Relato de caso.

Directory of Open Access Journals (Sweden)

R. C. Gonçalves

2005-03-01

Full Text Available RESUMO :O objetivo deste trabalho foi relatar um caso de mieloencefalite protozoária eqüina no Estado de São Paulo, Brasil. O diagnóstico se baseou nos sinais clínicos, no resultado positivo para anticorpos contra Sarcocystis neurona no soro e no líquor pela técnica de Western blot. Palavras chave: Mieloencefalite, Sarcocystis neurona, eqüinos. SUMMARY: The purpose of this work was to present a case of equine protozoal myeloencephalitis (EPM in the State of São Paulo, Brazil. The diagnosis was based on the clinical sings, the positive results of the serum and cerebrospinal fluid analysis (Western blot for antibodies against Sarcocystis neurona. Keywords: Myeloencephalitis, Sarcocystis neurona,

Observation of the in-plane spin-dephasing anisotropy in [111]-grown GaAs/AlGaAs quantum well

International Nuclear Information System (INIS)

Zhao, Chunbo; Li, Junbin; Yu, Ying; Ni, Haiqiao; Niu, Zhichuan; Zhang, Xinhui

2014-01-01

The electron density and temperature dependent in-plane spin-dephasing anisotropy in [111]-grown GaAs quantum well (QW) has been investigated by time-resolved magneto-Kerr rotation technique. Due to the specific symmetry of [111]-grown quantum well, the in-plane Rashba and linear Dresselhaus effective spin-orbit magnetic field is parallel to each other for electron wave vectors in all directions. However, an obvious in-plane spin-dephasing anisotropy comparing [2 ¯ 11] with [01 ¯ 1] crystalline orientations has been observed and discussed in this work. Our results demonstrate the innegligible spin dephasing channel through inhomogeneous broadening induced by the out-of-plane non-linear Dresselhaus field, which arises naturally from the C 3 symmetry of [111]-grown GaAs QW

Nearaffine planes

NARCIS (Netherlands)

Wilbrink, H.A.

1982-01-01

In this paper we develop a theory for nearaffine planes analogous to the theory of ordinary affine translation planes. In a subsequent paper we shall use this theory to give a characterization of a certain class of Minkowski planes.

Poiseuille, thermal transpiration and Couette flows of a rarefied gas between plane parallel walls with nonuniform surface properties in the transverse direction and their reciprocity relations

Science.gov (United States)

Doi, Toshiyuki

2018-04-01

Slow flows of a rarefied gas between two plane parallel walls with nonuniform surface properties are studied based on kinetic theory. It is assumed that one wall is a diffuse reflection boundary and the other wall is a Maxwell-type boundary whose accommodation coefficient varies periodically in the direction perpendicular to the flow. The time-independent Poiseuille, thermal transpiration and Couette flows are considered. The flow behavior is numerically studied based on the linearized Bhatnagar-Gross-Krook-Welander model of the Boltzmann equation. The flow field, the mass and heat flow rates in the gas, and the tangential force acting on the wall surface are studied over a wide range of the gas rarefaction degree and the parameters characterizing the distribution of the accommodation coefficient. The locally convex velocity distribution is observed in Couette flow of a highly rarefied gas, similarly to Poiseuille flow and thermal transpiration. The reciprocity relations are numerically confirmed over a wide range of the flow parameters.

Shape analysis of single and stacked InAs quantum dots at the atomic level by cross-sectional STM

NARCIS (Netherlands)

Bruls, D.M.; Vugs, J.W.A.M.; Koenraad, P.M.; Skolnick, M.S.; Hopkinson, M.; Wolter, J.H.; Miura, N.; Ando, T.

2001-01-01

We present a study of InAs self-assembled quantum dots in GaAs by cross-sectional scanning tunneling microscopy (X-STM). Our results shows that the dots consist of an JnGaAs alloy and that the indium content increases towards the top. The analysis of the height versus base length relation obtained

Degree of functionalization and stability of fluorine groups fixed to carbon nanotubes and graphite nanoplates by CF{sub 4} microwave plasma

Energy Technology Data Exchange (ETDEWEB)

Abdelkader-Fernández, V.K.; Morales-Lara, F. [Departamento de Química Inorgánica, Facultad de Ciencias, Universidad de Granada, 18071 Granada (Spain); Melguizo, M.; García-Gallarín, C.; López-Garzón, R.; Godino-Salido, M.L. [Departamento de Química Inorgánica y Orgánica, Facultad de Ciencias Experimentales, Universidad de Jaén, 23071 Jaén (Spain); López-Garzón, F.J., E-mail: flopez@ugr.es [Departamento de Química Inorgánica, Facultad de Ciencias, Universidad de Granada, 18071 Granada (Spain); Domingo-García, M.; Pérez-Mendoza, M.J. [Departamento de Química Inorgánica, Facultad de Ciencias, Universidad de Granada, 18071 Granada (Spain)

2015-12-01

Highlights: • The surface area of GNPs and MWCNTs determines the degree of fluorination by plasma. • Fluorine is bound to carbon atoms in up to eight chemical environments. • The stability of the fluorine groups varies in a wide range of temperature. • The electronic properties of MWCNTs are changed as a consequence of fluorination. • The textural characteristics of the materials are not changed after fluorination. - Abstract: The fluorination of graphite nanoplates (GNPs) and multi-wall carbon nanotubes (MWCNTs) by CF{sub 4} cold plasma is reported. The aim is to analyze the influence of the textural characteristics in the degree of fluorination and in the thermal stability of the fluorine groups. We have used thermal programmed desorption which clearly discriminates the nature of the desorbing species and their stability. The degree of fluorination of both materials is similar up to 20 min of treatment and then it decreases in GNPs at longer treatments. Nevertheless, the fluorine content in MWCNTs keeps increasing after 45 min. This different evolution of the fluorination degree with the time is related to the surface areas. The fluorine bonding is produced not only in defects and irregularities but also on the external graphene sheets of both materials, and it results in up to eight different chemical environments having different thermal stabilities from 150 °C up to temperatures higher than 900 °C. The fluorination increases the electronic states near the Fermi level of the nanotubes whereas it does not affect the electronic properties of graphite nanoplates. It is shown that no intercalation compounds are formed and that the textural characteristics of the materials remain unchanged after fluorination.

InAs quantum dot growth on Al{sub x}Ga{sub 1−x}As by metalorganic vapor phase epitaxy for intermediate band solar cells

Energy Technology Data Exchange (ETDEWEB)

Jakomin, R., E-mail: robertojakomin@xerem.ufrj.br [Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil); Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil); Kawabata, R. M. S.; Souza, P. L. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro, 22452-900 RJ (Brazil); Mourão, R. T.; Pires, M. P. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ (Brazil); Micha, D. N. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ (Brazil); Coordenação de Licenciatura em Física, CEFET/RJ, Petrópolis-RJ (Brazil); Xie, H.; Fischer, A. M.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

2014-09-07

InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1−x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

Solução concentrada de albumina eqüina na fluidoterapia em eqüinos com desidratação leve a moderada

OpenAIRE

Belli,C.B.; Michima,L.E.S.; Latorre,S.M.; Fernandes,W.R.

2008-01-01

Avaliou-se o efeito da solução concentrada de albumina eqüina diluída a 5% em solução fisiológica (SF) durante fluidoterapia em eqüinos, após indução de desidratação leve a moderada, utilizando-se cinco eqüinos adultos, sem alterações clínicas. Cada animal passou por dois protocolos de fluidoterapia: apenas com SF (metade sob pressão e metade em fluxo contínuo - grupo-controle); com solução de albumina eqüina e SF (apenas em fluxo contínuo - grupo experimental). Avaliaram-se peso, exame físic...

ZIF-8 derived hexagonal-like α-Fe2O3/ZnO/Au nanoplates with tunable surface heterostructures for superior ethanol gas-sensing performance

Science.gov (United States)

Chen, Ying; Li, Hui; Ma, Qian; Che, Quande; Wang, Junpeng; Wang, Gang; Yang, Ping

2018-05-01

A series of hexagonal-like α-Fe2O3/ZnO/Au nanoplate heterostructures with tunable morphologies and superior ethanol gas-sensing performance were successfully synthesized via the facile multi-step reaction processes. Hexagonal-like α-Fe2O3 nanoplates with uniform size around 150 nm are employed as new sensor substrates for loading the well-distributed ZnO and Au nanoparticles with adjustable size distribution on the different surfaces. Brunauer-EmmeQ-Teller (BET) surface areas of α-Fe2O3 and α-Fe2O3/ZnO samples are evaluated to be 37.94 and 61.27 m2/g, respectively, while α-Fe2O3/ZnO/Au composites present the highest value of 79.08 m2/g. These α-Fe2O3-based functional materials can exhibit outstanding sensing properties to ethanol. When the ethanol concentration is 100 ppm, the response value of α-Fe2O3/ZnO/Au composites can reach up to 170, which is 14.6 and 80.3 times higher than that of α-Fe2O3/ZnO and pure α-Fe2O3, respectively. The recycling stability and long-time effectiveness can be availably maintained within 30 days, as well as the response and recovery times are shortened to 4 and 5 s, respectively. Significantly, the response value of α-Fe2O3/ZnO/Au composite is still up to 63 at an operating temperature of 280 °C even though the ethanol concentration decreases to 10 ppm. The enhanced gas sensing mechanism would be focused on the synergistic effects of phase compositions, surface heterogeneous structures, large specific surface area, and the selective depositions of Au nanoparticles in α-Fe2O3/ZnO/Au sensors. The synergistic effect of different surface heterostructures referring to α-Fe2O3/Au and α-Fe2O3/ZnO/Au and their novel electron transport processes on the surfaces are first investigated and discussed in details. It is expected that hexagonal-like α-Fe2O3/ZnO/Au nanoplate heterostructures with excellent sensing performance can be the promising highly-sensitive materials in the actual application for monitoring and detecting ethanol.

Pulsed cathodoluminescence and Raman spectra of MoS{sub 2} and WS{sub 2} nanocrystals and their combination MoS{sub 2}/WS{sub 2} produced by self-propagating high-temperature synthesis

Energy Technology Data Exchange (ETDEWEB)

Bozheyev, Farabi, E-mail: farabi.bozheyev@gmail.com [Institute of High Technology Physics, National Research Tomsk Polytechnic University, 30 Lenin Ave., 634050 Tomsk (Russian Federation); National Nanolaboratory, al-Farabi Kazakh National University, 71 al-Farabi Ave., 050000 Almaty (Kazakhstan); Nazarbayev University Research and Innovation System, 53 Kabanbay Batyr St., 010000 Astana (Kazakhstan); Valiev, Damir [Institute of High Technology Physics, National Research Tomsk Polytechnic University, 30 Lenin Ave., 634050 Tomsk (Russian Federation); Nemkayeva, Renata [National Nanolaboratory, al-Farabi Kazakh National University, 71 al-Farabi Ave., 050000 Almaty (Kazakhstan)

2016-02-29

Molybdenum and tungsten disulfide nanoplates were produced by self-propagating high-temperature synthesis in argon atmosphere. This method provides an easy way to produce MoS{sub 2} and WS{sub 2} from nanoplates up to single- and several layers. The Raman peak intensities corresponding to in-plane E{sup 1}{sub 2g} and out-of-plane A{sub 1g} vibration modes and their shifts strongly depend on the thicknesses of the MoS{sub 2} and WS{sub 2} platelets indicating size-dependent scaling laws and properties. An electron beam irradiation of MoS{sub 2} and WS{sub 2} powders leads to an occurrence of pulsed cathodoluminescence (PCL) spectra at 575 nm (2.15 eV) and 550 nm (2.25 eV) characteristic to their intrinsic band gaps. For the combination of MoS{sub 2} and WS{sub 2} nanopowders, a PCL shoulder at 430 nm (2.88 eV) was observed, which is explained by the radiative electron-hole recombination at the MoS{sub 2}/WS{sub 2} grain boundaries. The luminescence decay kinetics of the MoS{sub 2}/WS{sub 2} nanoplates appears to be slower than for individual MoS{sub 2} and WS{sub 2} platelets due to a spatial separation of electrons and holes at MoS{sub 2}/WS{sub 2} junction resulting in extension of recombination time.

ISTRAŽIVANJE ZAGAĐENOSTI MESA, RADNIH POVRŠINA I PRIBORA BAKTERIJAMA RODA PROTEUS

OpenAIRE

Hadžiosmanović, Mirza; Živković, Josip; Trešćec, Aida

1992-01-01

Istraživan je stupanj zagađenja sirovina i radnih površina tijekom proizvodnje mesnih prerađevina bakterijama roda Proteus. Rezultati su pokazali da je meso peradi zagađeno vrstama roda Proteus u količini od 8,8%, svježe goveđe meso 7,8 % a polutrajne i obarene kobasice neposredno nakon proizvoodnje u količini od 2,8 %. Rezultati pretraga brisova s proizvodnih linija pokazuju da je pripadnika roda Proteus najviše u kobasičarnici (14,6 %), na liniji prerade svinja (11,8 %), goveda (10,9 %), a ...

Parallel combinations of pre-ionized low jitter spark gaps

International Nuclear Information System (INIS)

Fitzsimmons, W.A.; Rosocha, L.A.

1979-01-01

The properties of 10 to 30 kV four electrode field emission pre-ionized triggered spark gaps have been studied. A mid-plane off-axis trigger electrode is biased at +V 0 /2, and a field emission point is located adjacent to and biased at the grounded cathode potential. Simultaneous application of a -V 0 trigger rapid pulse to both the electrodes results in the rapid sequential closing of the anode-trigger and trigger-cathode gaps. The observed jitter is about 1.5 ns. Parallel operation of these gaps (up to 10 so far) connected to a common capacitive load has been studied. A simple theory that predicts the number of gaps that may be expected to operate in parallel is discussed

Capacity Analysis for Parallel Runway through Agent-Based Simulation

Directory of Open Access Journals (Sweden)

Yang Peng

2013-01-01

Full Text Available Parallel runway is the mainstream structure of China hub airport, runway is often the bottleneck of an airport, and the evaluation of its capacity is of great importance to airport management. This study outlines a model, multiagent architecture, implementation approach, and software prototype of a simulation system for evaluating runway capacity. Agent Unified Modeling Language (AUML is applied to illustrate the inbound and departing procedure of planes and design the agent-based model. The model is evaluated experimentally, and the quality is studied in comparison with models, created by SIMMOD and Arena. The results seem to be highly efficient, so the method can be applied to parallel runway capacity evaluation and the model propose favorable flexibility and extensibility.

The investigation of alloy formation during InAs nanowires growth on GaAs (111)B substrate

Energy Technology Data Exchange (ETDEWEB)

Saqib, Muhammad; Biermanns, Andreas; Davydok, Anton; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Walter-Flex-Str. 3, Siegen 57072 (Germany); Rieger, Torsten; Grap, Thomas; Lepsa, Mihail [Peter Gruenberg Institute (PGI-9), Forschungzentrum Juelich, Juelich 52425 (Germany)

2013-07-01

A possible way to obtain nanowires is the growth in molecular beam epitaxy (MBE) on the (111) oriented surface of the desired substrate, covered by a thin oxide layer. A crucial parameter in this method is the initial thickness of the oxide layer, often determined by an etching procedure. In this contribution, we report on the structural investigation of two different series (etched and unetched) of NWs samples. Vertically aligned InAs nanowires (NWs) doped with Si were self-assisted grown by molecular beam epitaxy on GaAs [111]B substrates covered with a thin SiO{sub x} layer. Using a combination of symmetric and asymmetric X-ray diffraction we study the influence of Si supply on the growth process and nanostructure formation. We find that the number of parasitic crystallites grown between the NWs increases with increasing Si flux. In addition, we observe the formation of a Ga{sub 0.2}In{sub 0.8}As alloy if the growth is performed on samples covered by a defective (etched) oxide layer. This alloy formation is observed within the crystallites and not within the nanowires. The Gallium concentration is determined from the lattice mismatch of the crystallites relative to the InAs nanowires. No alloy formation is found for samples with faultless oxide layers.

The influence of atmosphere on performance of pure-phase WZ and ZB InAs nanowire transistors.

Science.gov (United States)

Ullah, Abu Rifat; Joyce, Hannah J; Tan, Hoe; Jagadish, Chennupati; Micolich, Adam P

2017-09-21

We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N₂ and O₂, and N₂ bubbled through liquid H₂O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2-3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires. © 2017 IOP Publishing Ltd.