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Sample records for pin diode technology

  1. Application of PIN diodes in Physics Research

    International Nuclear Information System (INIS)

    Ramirez-Jimenez, F. J.; Mondragon-Contreras, L.; Cruz-Estrada, P.

    2006-01-01

    A review of the application of PIN diodes as radiation detectors in different fields of Physics research is presented. The development and research in semiconductor technology, the use of PIN diodes in particle counting, X-and γ-ray spectroscopy, medical applications and charged particle spectroscopy are considered. Emphasis is made in the activities realized in the different research and development Mexican institutions dealing with this kind of radiation detectors

  2. Spectroscopic amplifier for pin diode

    International Nuclear Information System (INIS)

    Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R.

    2014-10-01

    The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

  3. Influence of production technology and design on characteristics neutron-sensitive P-I-N diodes

    International Nuclear Information System (INIS)

    Perevertaylo, V.L.; Kovrygin, V.I.

    2012-01-01

    This paper presents the results of tests on neutron-sensitive p-i-n diode with local p-n junction, which allows to measure not only the integral dose by nonionizing energy loss (NIEL), but also the real-time dose and dose rate because of ionizing energy losses (IEL). The influence of design and process parameters and the lifetime of minority carriers on the radiation characteristics of the device considered. Sensitivity at low doses (from one to ten rad) is limited due to a decrease in the lifetime because of influence of lateral sides of cut. The sensitivity and accuracy of dose can be increased by moving of p-n junction away from the cut surface. The dependence of the voltage drop across the diode on the neutron dose irradiation up to 5 krad received, and the sensitivity was 2 - 3 mV/rad. We have demonstrated that replacement of the bulk p-i-n diode with total p-n junction by new diodes with local p-n junction allow for increase sensitivity, accuracy of dose and application in NIEL and IEL measurements simultaneously. Explanation for the extinction of a direct current through the diode with increasing doses of neutron irradiation proposed

  4. Spectroscopic amplifier for pin diode; Amplificador espectroscopico para diodo Pin

    Energy Technology Data Exchange (ETDEWEB)

    Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R., E-mail: bebe.luna_s@hotmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

    2014-10-15

    The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

  5. Performance measurements of hybrid PIN diode arrays

    International Nuclear Information System (INIS)

    Jernigan, J.G.; Arens, J.F.; Collins, T.; Herring, J.; Shapiro, S.L.; Wilburn, C.D.

    1990-05-01

    We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format having 10 x 64 pixels, each 120 μm square, and the other format having 256 x 256 pixels, each 30 μm square. In both cases, the thickness of the PIN diode layer is 300 μm. Measurements of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 13 figs

  6. Study of PIN diode energy traps created by neutrons

    International Nuclear Information System (INIS)

    Sopko, V; Dammer, J; Sopko, B; Chren, D

    2013-01-01

    Characterization of radiation defects is still ongoing and finds greater application in the increasing radiation doses on semiconductor detectors in experiments. Studying the changes of silicon PIN diode for high doses of radiation is the fundamental motivation for our measurements. In this article we describe the behavior of the PIN diode and development of the disorder caused by neutrons from a 252Cf and doses up to 8 Gy. The calibration curve for PIN diode shows the effect of disorders as the changes of the voltampere characteristics depending on the dose of neutron irradiation. The measured values for defects are in good agreement with created energy traps.

  7. Pin Diode Detector For Radiation Field Monitoring In A Current Mode

    International Nuclear Information System (INIS)

    Beck, A.; Wengrowicz, U.; Kadmon, Y.; Tirosh, D.; Osovizky, A.; Vulasky, E.; Tal, N.

    1999-01-01

    Thus paper presents calculations and tests made for a detector based on a bare Pin diode and a Pin diode coupled to a plastic scintillator. These configurations have a variety of applications in radiation field monitoring. For example, the Positron Emission Tomography (PET) technology which becomes an established diagnostic imaging modality. Flour-18 is one of the major isotopes being used by PET imaging. The PET method utilizes short half life β + radioisotopes which, by annihilation, produce a pair of high energy photons (511 keV). Fluoro-deoxyglucose producers are required to meet federal regulations and licensing requirements. Some of the regulations are related to the production in chemistry modules regarding measuring the Start Of Synthesis (SOS) activity and verifying the process repeatability. Locating a radiation detector based on Pin diode inside the chemistry modules is suitable for this purpose. The dimensions of a Pin diode based detector can be small, with expected linearity over several scale decades

  8. Development of a semiconductor neutron dosimeter with a PIN diode

    International Nuclear Information System (INIS)

    Kim, Seungho; Lee, Namho; Cho, Jaiwan; Youk, Geunuck

    2004-01-01

    When a Si PIN diode is exposed to fast neutrons, it produces displacement in Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed, and multi PIN diode arrays with various intrinsic layer (I layer) thicknesses and cross sections were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have good characteristics of linearity in a neutron irradiation experiment and give results that the increase of thickness of I layer and the decrease of the cross-section of the PIN diodes improve the sensitivity. Newly developed PIN diodes with a thicker I layer and various cross sections were retested and showed the best neutron sensitivity in the condition that the I layer thickness was similar to the length of a side of the cross-section. On the basis of two test results, final PIN diodes with a rectangular shape were manufactured and the characteristics for neutron detectors were analyzed through the neutron beam test using the on-line electronic dosimetry system. The developed PIN diode shows a good linearity to absorbed dose in the range of 0 to 1,000cGy (Tissue) and its neutron sensitivity is 13 mV/cGy at a constant current of 5 mA, that is three higher than that of similar commercially developed neutron detectors. Moreover the device shows less dependency on the orientation of the neutron beam and a considerable stability in an annealing test for a long period. (author)

  9. Pinning, flux diodes and ratchets for vortices interacting with conformal pinning arrays

    International Nuclear Information System (INIS)

    Olson Reichhardt, C. J.; Wang, Y. L.; Argonne National Laboratory; Xiao, Z. L.; Northern Illinois University, DeKalb, IL

    2016-01-01

    A conformal pinning array can be created by conformally transforming a uniform triangular pinning lattice to produce a new structure in which the six-fold ordering of the original lattice is conserved but where there is a spatial gradient in the density of pinning sites. Here we examine several aspects of vortices interacting with conformal pinning arrays and how they can be used to create a flux flow diode effect for driving vortices in different directions across the arrays. Under the application of an ac drive, a pronounced vortex ratchet effect occurs where the vortices flow in the easy direction of the array asymmetry. When the ac drive is applied perpendicular to the asymmetry direction of the array, it is possible to realize a transverse vortex ratchet effect where there is a generation of a dc flow of vortices perpendicular to the ac drive due to the creation of a noise correlation ratchet by the plastic motion of the vortices. We also examine vortex transport in experiments and compare the pinning effectiveness of conformal arrays to uniform triangular pinning arrays. In conclusion, we find that a triangular array generally pins the vortices more effectively at the first matching field and below, while the conformal array is more effective at higher fields where interstitial vortex flow occurs.

  10. Influence of irradiation on defects creation in pin diode structure

    International Nuclear Information System (INIS)

    Sopko, V.; Dammer, J.; Sopko, B.; Chren, D.

    2012-01-01

    In this paper the manufacture of type S1 PIN diodes and radiation defect induce by fast neutrons were studied. A shift from VV"- to VV (neutral) is observed in neutron irradiated diodes. From the results obtained, an explanation that clearly offers itself is that the nature of the defects produced by irradiation of material exhibiting N type conductivity is different from those for type P material. Given that the experiments were conducted with the same material, i.e., the dopant present in the material remained unchanged, it can be stated that simply by changing the type of conductivity with increasing dose, a different kind of defects is produced, having different activation energies in the forbidden band. All these results are consistent with the ongoing RD 50 experiments at CERN.

  11. Temperature dependent simulation of diamond depleted Schottky PIN diodes

    International Nuclear Information System (INIS)

    Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti; Goodnick, Stephen M.; Koeck, Franz A. M.; Nemanich, Robert J.

    2016-01-01

    Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco ® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

  12. Temperature dependent simulation of diamond depleted Schottky PIN diodes

    Science.gov (United States)

    Hathwar, Raghuraj; Dutta, Maitreya; Koeck, Franz A. M.; Nemanich, Robert J.; Chowdhury, Srabanti; Goodnick, Stephen M.

    2016-06-01

    Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

  13. Temperature dependent simulation of diamond depleted Schottky PIN diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti; Goodnick, Stephen M. [Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-8806 (United States); Koeck, Franz A. M.; Nemanich, Robert J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-8806 (United States)

    2016-06-14

    Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.

  14. Radiation monitoring with CVD diamonds and PIN diodes at BaBar

    Energy Technology Data Exchange (ETDEWEB)

    Bruinsma, M. [University of California Irvine, Irvine, CA 92697 (United States); Burchat, P. [Stanford University, Stanford, CA 94305-4060 (United States); Curry, S. [University of California Irvine, Irvine, CA 92697 (United States)], E-mail: scurry@slac.stanford.edu; Edwards, A.J. [Stanford University, Stanford, CA 94305-4060 (United States); Kagan, H.; Kass, R. [Ohio State University, Columbus, OH 43210 (United States); Kirkby, D. [University of California Irvine, Irvine, CA 92697 (United States); Majewski, S.; Petersen, B.A. [Stanford University, Stanford, CA 94305-4060 (United States)

    2007-12-11

    The BaBar experiment at the Stanford Linear Accelerator Center has been using two polycrystalline chemical vapor deposition (pCVD) diamonds and 12 silicon PIN diodes for radiation monitoring and protection of the Silicon Vertex Tracker (SVT). We have used the pCVD diamonds for more than 3 years, and the PIN diodes for 7 years. We will describe the SVT and SVT radiation monitoring system as well as the operational difficulties and radiation damage effects on the PIN diodes and pCVD diamonds in a high-energy physics environment.

  15. Thick and large area PIN diodes for hard X-ray astronomy

    CERN Document Server

    Ota, N; Sugizaki, M; Kaneda, M; Tamura, T; Ozawa, H; Kamae, T; Makishima, K; Takahashi, T; Tashiro, M; Fukazawa, Y; Kataoka, J; Yamaoka, K; Kubo, S; Tanihata, C; Uchiyama, Y; Matsuzaki, K; Iyomoto, N; Kokubun, M; Nakazawa, T; Kubota, A; Mizuno, T; Matsumoto, Y; Isobe, N; Terada, Y; Sugiho, M; Onishi, T; Kubo, H; Ikeda, H; Nomachi, M; Ohsugi, T; Muramatsu, M; Akahori, H

    1999-01-01

    Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm sup 2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.

  16. Characterization of an Mg-implanted GaN p-i-n Diode

    Science.gov (United States)

    2016-03-31

    Characterization of an Mg- implanted GaN p-i-n Diode Travis J. Anderson, Jordan D. Greenlee, Boris N. Feigelson, Karl D. Hobart, and Francis J...Kub Naval Research Laboratory, Washington, DC 20375 Abstract: A p-i-n diode formed by the implantation of Mg in GaN was fabricated and...characterized. After implantation , Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C

  17. Recombination of charge carriers in the GaAs-based p-i-n diode

    International Nuclear Information System (INIS)

    Ayzenshtat, G. I.; Yushenko, A. Y.; Gushchin, S. M.; Dmitriev, D. V.; Zhuravlev, K. S.; Toropov, A. I.

    2010-01-01

    It is established that the radiative recombination of charge carriers plays a substantial role in the GaAs-based p-i-n diodes at high densities of the forward current. It is shown experimentally that the diodes operating in microwave integrated circuits intensely emit light in the IR range with wavelengths from 890 to 910 nm. The obtained results indicate the necessity of taking into account the features of recombination processes in the GaAs-based microwave p-i-n diodes.

  18. The 1/f noise in a p-i-n diode and in a diode laser below threshold

    NARCIS (Netherlands)

    Fronen, R.J.; Hooge, F.N.

    1991-01-01

    --A theoretical treatment is given of number fluctuations induced by mobility fluctuations in the intrinsic region of a p-i-n diode. Mobility fluctuations lead to fluctuations in voltage across the intrinsic region. In the a.c. short-circuit situation, fluctuations across the intrinsic region result

  19. Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

    International Nuclear Information System (INIS)

    Li, Yun; Su, Ping; Yang, Zhimei; Ma, Yao; Gong, Min

    2016-01-01

    Highlights: • The complex permittivity has been studied on Si PIN irradiated by heavy Kr ions. • DLTS was used to investigate damages formed in PIN diode during irradiation. • The recombination of carriers has important influence on the complex permittivity. - Abstract: The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at E C -0.31 eV and E C -0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

  20. Automatic dosimeter for kerma measurement based on commercial PIN photo diodes

    International Nuclear Information System (INIS)

    Kushpil, V.; Kushpil, S.; Huna, Z.

    2011-01-01

    A new automatic dosimeter for measurement of radiation dose from neutron and ionization radiation is presented. The dosimeter (kerma meter) uses commercial PIN diodes with long base as its active element. Later it provides a maximal dependence of the minority carriers life time versus absorbed dose. The characteristics of the dosimeter were measured for several types of commercial diodes. Device can be useful in many environmental or industrial applications. (authors)

  1. Time-of-flight measurements of heavy ions using Si PIN diodes

    Energy Technology Data Exchange (ETDEWEB)

    Strekalovsky, A. O., E-mail: alex.strek@bk.ru; Kamanin, D. V. [Joint Institute for Nuclear Research (Russian Federation); Pyatkov, Yu. V. [National Nuclear Research University MEPhI (Moscow Engineering Physics Institute) (Russian Federation); Kondratyev, N. A.; Zhuchko, V. E. [Joint Institute for Nuclear Research (Russian Federation); Ilić, S. [University of Novi Sad (Serbia); Alexandrov, A. A.; Alexandrova, I. A. [Joint Institute for Nuclear Research (Russian Federation); Jacobs, N. [University of Stellenbosch, Faculty of Military Science, Military Academy (South Africa); Kuznetsova, E. A.; Mishinsky, G. V.; Strekalovsky, O. V. [Joint Institute for Nuclear Research (Russian Federation)

    2016-12-15

    A new off-line timing method for PIN diode signals is presented which allows the plasma delay effect to be suppressed. Velocities of heavy ions measured by the new method are in good agreement within a wide range of masses and energies with velocities measured by time stamp detectors based on microchannel plates.

  2. Lifetime control of the minority carrier in PiN diodes by He+ ion implantation

    International Nuclear Information System (INIS)

    Tanaka, Y.; Kojima, K.; Takao, K.; Okamoto, M.; Kawasaki, M.; Takatsuka, A.; Yatsuo, T.; Arai, K.

    2005-01-01

    This paper reports the first demonstration of the lifetime control of the minority carrier in 4H-SiC PiN diodes by He + ion implantation. In this work, we fabricated 4H-SiC PiN diodes with the epitaxial junction and the blocking voltage of 2.6 kV, precisely corresponding to the theoretical blocking voltage calculated from the doping concentration (4.0 x 10 15 /cm 2 ) and the thickness of the drift layer (16.5 μm). He + ion implantation was performed with the energy and the dose of 400 kV and 1.0 x 10 13 -2.0 x 10 14 /cm 2 , respectively. We observed no different characteristics in the blocking voltage (2.6kV) and leakage current ( + ion implantation. However, we confirmed the improvement of the current recovery characteristics in the diodes with He + ion implantation. (orig.)

  3. Laser diode technology and applications

    International Nuclear Information System (INIS)

    Figueroa, L.

    1989-01-01

    This book covers a wide range of semiconductor laser technology, from new laser structures and laser design to applications in communications, remote sensing, and optoelectronics. The authors report on new laser diode physics and applications and present a survey of the state of the art as well as progress in new developments

  4. A filter technique for optimising the photon energy response of a silicon pin diode dosemeter

    International Nuclear Information System (INIS)

    Olsher, R.H.; Eisen, Y.

    1996-01-01

    Unless they are energy compensated, silicon PIN diodes used in electronic pocket dosemeters, have significant over-response below 200 keV. Siemens is using three diodes in parallel with individual filters to produce excellent energy and angular response. An algorithm based on the photon spectrum of a single diode could be used to flatten the energy response. The commercial practice is to use a single diode with a simple filter to flatten the energy response, despite the mediocre low energy photon. The filter technique with an opening has been used for energy compensating GM detectors and proportional counters and a new variation of it has been investigated which compensates the energy response of a silicon PIN diode and maintains an extended low energy response. It uses a composite filter of two or more materials with several openings whose individual area is in the range of 15% to 25% of the diode's active area. One opening is centred over the diode's active area and others are located at the periphery of the active area to preserve a good polar response to ±45 o . Monte Carlo radiation transport methods were used to simulate the coupled electron-photon transport through a Hamamatsu S2506-01 diode and to determine the energy response of the diode for a variety of filters. In current mode, the resultant dosemeter energy response relative to air dose was within -15% and +30% for 0 o incidence over the energy range from 15 keV to 1 MeV. In pulse mode, the resultant dosemeter energy response was within -25% and +50% for 0 o incidence over the energy range from 30 keV to 10 MeV. For ±45 o incidence, the energy response was within -25% and +40% from 40 keV to 10 MeV. Theoretical viability of the filter technique has been shown in this work (Author)

  5. Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yun [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Su, Ping, E-mail: pingsu@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Yang, Zhimei; Ma, Yao [Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gong, Min, E-mail: mgong@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China)

    2016-12-01

    Highlights: • The complex permittivity has been studied on Si PIN irradiated by heavy Kr ions. • DLTS was used to investigate damages formed in PIN diode during irradiation. • The recombination of carriers has important influence on the complex permittivity. - Abstract: The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at E{sub C}-0.31 eV and E{sub C}-0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

  6. Sensitive pre-amplifier to load for Pin diodes

    International Nuclear Information System (INIS)

    Jacobo V, R. Y.; Hernandez D, V.; Ramirez J, F. J.

    2013-10-01

    The electronic instrumentation is indispensable for the measurement and characterization of the radiation. By means of this essential characteristics of the radiation are determined, as activity and their energy components. The nuclear instrumentation is based on the technical characteristics of the radiation detectors and the electronic devices associates (amplifiers, ana logical and digital converters, multichannel analyzers, etc.) The radiation detectors are very important instruments in fields as the nuclear physics, medicine, radiological protection, industry and in other fields, since they are the only method to capture the radiation and to be able to quantify it in precise form. To detect radiation diverse detector types are used, as the semiconductor type, inside them are the photodiodes type Pin. In this work the results that were obtained of the design, simulation, construction and tests of a preamplifier that was designed starting from a photodiode type Pin are presented. The system was designed and simulated with a program for electronic circuits, in this were carried out many tests being obtained a compact design and achieving the best necessary characteristics for its optimization. With the results of the simulation phase the electronics phase was built, which was couples to a spectroscopic amplifier and a multichannel analyzer. The total of the system was evaluated analyzing its performance before a triple source of alphas. Of the tests phase we find that the system allows obtaining, in a multichannel analyzer, the pulses height spectrum, with a good resolution and with this was calibrated the multichannel analyzer

  7. Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiation

    Energy Technology Data Exchange (ETDEWEB)

    Sopko, V. [Hospital Na Bulovce, Department of Radiological Physics, Budinova 2, CZ-18081 Prague 8 (Czech Republic); Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, CZ 12800 Prague 2 (Czech Republic); Sopko, B., E-mail: bruno.sopko@cern.ch [Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, CZ 16000 Prague 6 (Czech Republic); Faculty of Production Technology and Management, J. E. Purkyně Univerzity in Ústí nad Labem, Na Okraji 1001, 400 01 Ústí nad Labem (Czech Republic); Chren, D. [Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, CZ 16000 Prague 6 (Czech Republic); Dammer, J. [Hospital Na Bulovce, Department of Radiological Physics, Budinova 2, CZ-18081 Prague 8 (Czech Republic); Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, CZ 12800 Prague 2 (Czech Republic); Charles University in Prague, First Faculty of Medicine, Salmovská 1,CZ-12000 Prague 2 (Czech Republic)

    2013-12-01

    Studies of radiation induced defects continue to be relevant as they find an ever greater application due to the increasing radiation doses to which semiconductor detectors are exposed. Efforts of figuring out the changes due to high radiation doses provide the fundamental motivation for this type of experiments. The PIN diode is described, and a developmental disorder caused thereto by 60Co source gamma quanta ranging from 100 kGy to 1 MGy. The calibration curve shows the effect of disturbances on the volt-ampere characteristics as a function of the dose of gamma radiation. The results are compared with earlier published data. Highlights: •We have studied Si PIN diode dosimeters irradiated by gamma. •We measured DLTS spectra and calculated energy traps caused by gamma irradiation. •Increasing dose caused creation of new traps and disappearance of others.

  8. Waveguide photonic crystals with characteristics controlled with p-i-n diodes

    International Nuclear Information System (INIS)

    Usanov, D. A.; Skripal, A. V.; Abramov, A. V.; Bogolyubov, A. S.; Skvortsov, V. S.; Merdanov, M. K.

    2010-01-01

    A one-dimensional waveguide photonic structure-specifically, a photonic crystal with a controllable frequency characteristic-is designed. The central frequency of the spectral window of the photonic crystal can be tuned by choosing the parameters of disturbance of periodicity in the photonic crystal, whereas the transmission coefficient at a particular frequency can be controlled by varying the voltage at a p-i-n diode. It is shown that the possibility exists of using the waveguide photonic crystal to design a microwave device operating in the 3-cm-wavelength region, with a transmission band of 70 MHz at a level 3 dB and the transmission coefficient controllable in the range from -1.5 to -25 dB under variations in the forward voltage bias at the p-i-n diode from zero to 700 mV.

  9. Testing digital recursive filtering method for radiation measurement channel using pin diode detector

    International Nuclear Information System (INIS)

    Talpalariu, C. M.; Talpalariu, J.; Popescu, O.; Mocanasu, M.; Lita, I.; Visan, D. A.

    2016-01-01

    In this work we have studied a software filtering method implemented in a pulse counting computerized measuring channel using PIN diode radiation detector. In case our interest was focalized for low rate decay radiation measurement accuracies improvement and response time optimization. During works for digital mathematical algorithm development, we used a hardware radiation measurement channel configuration based on PIN diode BPW34 detector, preamplifier, filter and programmable counter, computer connected. We report measurement results using two digital recursive methods in statically and dynamically field evolution. Software for graphical input/output real time diagram representation was designed and implemented, facilitating performances evaluation between the response of fixed configuration software recursive filter and dynamically adaptive configuration recursive filter. (authors)

  10. Comparison of silicon pin diode detector fabrication processes using ion implantation and thermal doping

    International Nuclear Information System (INIS)

    Zhou, C.Z.; Warburton, W.K.

    1996-01-01

    Two processes for the fabrication of silicon p-i-n diode radiation detectors are described and compared. Both processes are compatible with conventional integrated-circuit fabrication techniques and yield very low leakage currents. Devices made from the process using boron thermal doping have about a factor of 2 lower leakage current than those using boron ion implantation. However, the boron thermal doping process requires additional process steps to remove boron skins. (orig.)

  11. Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

    Science.gov (United States)

    Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

    2013-09-01

    Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

  12. Progress report on the use of hybrid silicon pin diode arrays in high energy physics

    International Nuclear Information System (INIS)

    Shapiro, S.L.; Jernigan, J.G.; Arens, J.F.

    1990-05-01

    We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump-bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format has 10 x 64 pixels, each 120 μm square; and the other format has 256 x 156 pixels, each 30 μm square. In both cases, the thickness of the PIN diode layer is 300 μm. Measurements of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 17 figs

  13. A pin diode x-ray camera for laser fusion diagnostic imaging: Final technical report

    International Nuclear Information System (INIS)

    Jernigan, J.G.

    1987-01-01

    An x-ray camera has been constructed and tested for diagnostic imaging of laser fusion targets at the Laboratory for Laser Energetics (LLE) of the University of Rochester. The imaging detector, developed by the Hughes Aircraft Company, is a germanium PIN diode array of 10 x 64 separate elements which are bump bonded to a silicon readout chip containing a separate low noise amplifier for each pixel element. The camera assembly consists of a pinhole alignment mechanism, liquid nitrogen cryostat with detector mount and a thin beryllium entrance window, and a shielded rack containing the analog and digital electronics for operations. This x-ray camera has been tested on the OMEGA laser target chamber, the primary laser target facility of LLE, and operated via an Ethernet link to a SUN Microsystems workstation. X-ray images of laser targets are presented. The successful operation of this particular x-ray camera is a demonstration of the viability of the hybrid detector technology for future imaging and spectroscopic applications. This work was funded by the Department of Energy (DOE) as a project of the National Laser Users Facility (NLUF)

  14. Noise in a-Si:H p-i-n detector diodes

    International Nuclear Information System (INIS)

    Cho, G.; Qureshi, S.; Drewery, J.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D.

    1991-10-01

    Noise of a-Si:H p-i-n diodes (5 ∼ 50 μm thick) under reverse bias was investigated. The current dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and of the metallic contacts is the dominant noise source which is unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by a factor 2 approximately. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise there seems to be a shaping time independent noise component at zero biased diodes

  15. CsI/PIN Diode Detector Manufacture and Gamma-ray Response Measurement

    International Nuclear Information System (INIS)

    Ha, Jang Ho; Park, Se Hwan; Kang, Sang Mook; Kim, Yong Kyun; Lee, Wo Kyu

    2007-01-01

    In the nuclear industry changes fast to expand from conventional industry to newly emerging market industry. Such industries are environment and security field. Conventional devices to field-orientation application are too heavy not enough to be hand held. Especially emerging environment and security markets need a device which should be handheld and available long term battery operation. Photomultiplier based detection system could not satisfied these requirements. One of the promising system is the scintillator/PIN diode device. Present investigation is motivated for the purpose of developing a gamma-ray monitoring system with nuclei identification and small and light enough to be transportable by worker

  16. Characteristics of Si-PIN diode X-ray detector with DSP electronics

    International Nuclear Information System (INIS)

    Dutta, Juhi; Tapader, Srijita; Bisoi, Abhijit; Ray, Sudatta; Saha Sarkar, M.; Pramanik, Dibyadyuti; Saha, Archisman

    2012-01-01

    In the present work, the studies to investigate the features of PIN diodes detector coupled with a digital processor have been extended. At low energies, backscattered Compton peaks are close in energy to photo peak of the gamma of interest. Thus the backscattered peaks pose a serious problem in the analysis of spectra of low energy gamma rays. It has been initiated some measurements to quantitatively estimate the same as function of energy and Z of the scatterer. Recently there has been application of backscattering in high-resolution gamma backscatter imaging for technical applications

  17. Leakage current of amorphous silicon p-i-n diodes made by ion shower doping

    International Nuclear Information System (INIS)

    Kim, Hee Joon; Cho, Gyuseong; Choi, Joonhoo; Jung, Kwan-Wook

    2002-01-01

    In this letter, we report the leakage current of amorphous silicon (a-Si:H) p-i-n photodiodes, of which the p layer is formed by ion shower doping. The ion shower doping technique has an advantage over plasma-enhanced chemical vapor deposition (PECVD) in the fabrication of a large-area amorphous silicon flat-panel detector. The leakage current of the ion shower diodes shows a better uniformity within a 30 cmx40 cm substrate than that of the PECVD diodes. However, it shows a higher leakage current of 2-3 pA/mm 2 at -5 V. This high current originates from the high injection current at the p-i junction

  18. 11.72 sq cm SiC Wafer-scale Interconnected 64 kA PiN Diode

    Science.gov (United States)

    2012-01-30

    drop of 10.3 V. The dissipated energy was 382 J and the calculated action exceeded 1.7 MA2 -s. Preliminary development of high voltage interconnection...scale diode action (surge current integral), a key reliability parameter, exceeded 1.7 MA2 -s. Figure 6: The wafer-scale interconnected diode...scale diode was 382 J and the calculated action exceeded 1.7 MA2 -sec. High voltage operation of PiN diodes, thyristors, and other semiconductor

  19. A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure.

    Science.gov (United States)

    Kamehama, Hiroki; Kawahito, Shoji; Shrestha, Sumeet; Nakanishi, Syunta; Yasutomi, Keita; Takeda, Ayaki; Tsuru, Takeshi Go; Arai, Yasuo

    2017-12-23

    This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel. The back-gate surface pinning structure using neutralized p-well at the back-gate surface and depleted n-well underneath the p-well for all the pixel area other than the charge sensing node is also essential for preventing hole injection from the p-well by making the potential barrier to hole, reducing dark current from the Si-SiO₂ interface and creating lateral drift field to gather signal electrons in the pixel area into the small charge sensing node. A prototype chip using 0.2 μm SOI technology shows very low readout noise of 11.0 e - rms , low dark current density of 56 pA/cm² at -35 °C and the energy resolution of 200 eV(FWHM) at 5.9 keV and 280 eV (FWHM) at 13.95 keV.

  20. Design and characterization of GaN p-i-n diodes for betavoltaic devices

    Science.gov (United States)

    Khan, Muhammad R.; Smith, Joshua R.; Tompkins, Randy P.; Kelley, Stephen; Litz, Marc; Russo, John; Leathersich, Jeff; Shahedipour-Sandvik, Fatemeh (Shadi); Jones, Kenneth A.; Iliadis, Agis

    2017-10-01

    The performance of gallium nitride (GaN) p-i-n diodes were investigated for use as a betavoltaic device. Dark IV measurements showed a turn on-voltage of approximately 3.2 V, specific-on-resistance of 15.1 mΩ cm2 and a reverse leakage current of -0.14 mA/cm2 at -10 V. A clear photo-response was observed when IV curves were measured under a light source at a wavelength of 310 nm (4.0 eV). In addition, GaN p-i-n diodes were tested under an electron-beam in order to simulate common beta radiation sources ranging from that of 3H (5.6 keV average) to 63Ni (17 keV average). From this data, we estimated output powers of 53 nW and 750 nW with overall efficiencies of 0.96% and 4.4% for our device at incident electron energies of 5.6 keV and 17 keV corresponding to 3H and 63Ni beta sources respectively.

  1. Performances of Dose Measurement of Commercial Electronic Dosimeters using Geiger Muller Tube and PIN Diode

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Hyunjun; Kim, Chankyu; Kim, Yewon; Kim, Giyoon; Cho, Gyuseong [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

    2014-05-15

    There are two categories in personal dosimeters, one is passive type dosimeter such as TLD (thermoluminescence dosimeter) and the other is active type dosimeter such as electronic dosimeter can show radiation dose immediately while TLD needs long time to readout its data by heating process. For improving the reliability of measuring dose for any energy of radiations, electronic dosimeter uses energy filter by metal packaging its detector using aluminum or copper, but measured dose of electronic dosimeter with energy filter cannot be completely compensated in wide radiation energy region. So, in this paper, we confirmed the accuracy of dose measurement of two types of commercial EPDs using Geiger Muller tube and PIN diode with CsI(Tl) scintillator in three different energy of radiation field. The experiment results for Cs-137 was almost similar with calculation value in the results of both electronic dosimeters, but, the other experiment values with Na-22 and Co-60 had higher error comparing with Cs-137. These results were caused by optimization of their energy filters. The optimization was depending on its thickness of energy filter. So, the electronic dosimeters have to optimizing the energy filter for increasing the accuracy of dose measurement or the electronic dosimeter using PIN diode with CsI(Tl) scintillator uses the multi-channel discriminator for using its energy information.

  2. Near space radiation dosimetry in Australian outback using a balloon borne energy compensated PIN diode detector

    International Nuclear Information System (INIS)

    Mukherjee, Bhaskar; Wu, Xiaofeng; Maczka, Tomasz; Kwan, Trevor; Huang, Yijun; Mares, Vladimir

    2016-01-01

    This paper reports the near space ballooning experiment carried out at Australian outback town West Wyalong (33°51′S, 147°24′E) on 19 July 2015. Several dedicated electronic detectors including digital temperature and acceleration (vibration) sensors and an energy compensated PIN-diode gamma ray dosimeter were installed in a thermally insulated Styrofoam payload box. A 9 V Lithium-Polymer battery powered all the devices. The payload box was attached to a helium-filled latex weather balloon and set afloat. The balloon reached a peak burst altitude of 30 km and then soft-landed aided by a self-deploying parachute 66.2 km away form the launch site. The payload box was retrieved and data collected from the electronic sensors analysed. The integrated cosmic ray induced photon ambient dose equivalent recorded by the PIN diode detector was evaluated to be 0.36 ± 0.05 μSv. Furthermore, a high-altitude extended version of commercially available aviation dosimetry package EPCARD.Net (European Program package for the Calculation of Aviation Route Doses) was used to calculate the ambient dose equivalents during the balloon flight. The radiation environment originated from the secondary cosmic ray shower is composed of neutrons, protons, electrons, muons, pions and photons. The photon ambient dose equivalent estimated by the EPCARD.Net code found to be 0.47 ± 0.09 μSv. The important aspects of balloon based near-space radiation dosimetry are highlighted in this paper. - Highlights: • Near space ballooning experiment in Australian outback. • A PIN diode based gamma dosimeter was sent to an altitude of 30 km. • Ambient photon dose equivalent was evaluated as a function of altitude. • Results agreed well with the simulated data delivered by EPCARD.Net Code. • The atmospheric temperature and payload jerks were also assessed.

  3. Correction of measured Gamma-Knife output factors for angular dependence of diode detectors and PinPoint ionization chamber.

    Science.gov (United States)

    Hršak, Hrvoje; Majer, Marija; Grego, Timor; Bibić, Juraj; Heinrich, Zdravko

    2014-12-01

    Dosimetry for Gamma-Knife requires detectors with high spatial resolution and minimal angular dependence of response. Angular dependence and end effect time for p-type silicon detectors (PTW Diode P and Diode E) and PTW PinPoint ionization chamber were measured with Gamma-Knife beams. Weighted angular dependence correction factors were calculated for each detector. The Gamma-Knife output factors were corrected for angular dependence and end effect time. For Gamma-Knife beams angle range of 84°-54°. Diode P shows considerable angular dependence of 9% and 8% for the 18 mm and 14, 8, 4 mm collimator, respectively. For Diode E this dependence is about 4% for all collimators. PinPoint ionization chamber shows angular dependence of less than 3% for 18, 14 and 8 mm helmet and 10% for 4 mm collimator due to volumetric averaging effect in a small photon beam. Corrected output factors for 14 mm helmet are in very good agreement (within ±0.3%) with published data and values recommended by vendor (Elekta AB, Stockholm, Sweden). For the 8 mm collimator diodes are still in good agreement with recommended values (within ±0.6%), while PinPoint gives 3% less value. For the 4 mm helmet Diodes P and E show over-response of 2.8% and 1.8%, respectively. For PinPoint chamber output factor of 4 mm collimator is 25% lower than Elekta value which is generally not consequence of angular dependence, but of volumetric averaging effect and lack of lateral electronic equilibrium. Diodes P and E represent good choice for Gamma-Knife dosimetry. Copyright © 2014 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  4. Artificial pinning center technology to enhance vortex pinning in YBCO coated conductors

    International Nuclear Information System (INIS)

    Matsumoto, Kaname; Mele, Paolo

    2010-01-01

    Crystalline defects on the nano-scale, which are called artificial pinning centers (APCs), were successfully introduced into high-temperature superconductors (HTS) by nanotechnology, in order to strongly pin the quantized vortices. The critical current densities, J c , of the HTS films were dramatically improved by APCs. It is possible to form APCs in high-quality epitaxial films, keeping the desired dimensionality, volume fraction, spatial distribution and so on. The in-field J c of HTS films at 77 K was improved by one order of magnitude compared with previous values using APCs. This technology can be applied to the coated conductor technology in progress, and a high J c has already been reported. A current outline of the research is described in this review.

  5. Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences

    CERN Document Server

    Mekki, J; Glaser, M; Moll, M; Dusseau, L

    2010-01-01

    The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 x 10(15) n(eq)/cm(2) have been measured and analyzed. A parameterization predicting the radiation response in the fluence range relevant for the use of the diodes as radiation monitors in Super-LHC experiments is presented.

  6. Silicon Waveguide with Lateral p-i-n Diode for Nonlinearity Compensation by On-Chip Optical Phase Conjugation

    DEFF Research Database (Denmark)

    Gajda, A.; Da Ros, Francesco; Porto da Silva, Edson

    2018-01-01

    A 1-dB Q-factor improvement through optical phase conjugation in a silicon waveguide with a lateral p-i-n diode enables BER

  7. High-speed and efficient silicon modulator based on forward-biased pin diodes

    Directory of Open Access Journals (Sweden)

    Suguru eAkiyama

    2014-11-01

    Full Text Available Silicon modulators, which use the free-carrier-plasma effect, were studied, both analytically and experimentally. It was demonstrated that the loss-efficiency product, a-VpL, was a suitable figure of merit for silicon modulators that enabled their intrinsic properties to be compared. Subsequently, the dependence of VpL on frequency was expressed by using the electrical parameters of a phase shifter when the modulator was operated by assuming a simple driving configuration. A diode-based modulator operated in forward biased mode was expected from analyses to provide more efficient operation than that in reversed mode at high frequencies due to its large capacitance. We obtained an a-VpL of 9.5 dB-V at 12.5 GHz in experiments by using the fabricated phase shifter with pin diodes operated in forward biased mode. This a-VpL was comparable to the best modulators operated in depletion mode. The modulator exhibited a clear eye opening at 56 Gb/s operated by 2 V peak-to-peak signals that was achieved by incorporating such a phase shifter into a ring resonator.

  8. Development of wire wrapping technology for FBR fuel pin

    International Nuclear Information System (INIS)

    Nogami, Tetsuya; Seki, Nobuo; Sawayama, Takeo; Ishibashi, Takashi

    1991-01-01

    For the FBR fuel assembly, the spacer wire is adopted to maintain the space between fuel pins. The developments have been carried out to achieve automatically wire wrapping with high precision. Based on the fundamental technology developed through the mock-up test operation, Joyo 'MK-I', fuel pin fabrication was started using partially mechanized wire wrapping machine in 1973. In 1978, an automated wire wrapping machine for Joyo 'MK-II' was developed by the adoption of some improvements for the wire inserting system to end plug hole and the precision of wire pitch. On the bases of these experiences, fully automated wire wrapping machine for 'Monju' fuel pin was installed at Plutonium Fuel Production Facility (PFPF) in 1987. (author)

  9. Signal amplification and leakage current suppression in amorphous silicon p-i-n diodes by field profile tailoring

    International Nuclear Information System (INIS)

    Hong, W.S.; Zhong, F.; Mireshghi, A.; Perez-Mendez, V.

    1999-01-01

    The performance of amorphous silicon p-i-n diodes as radiation detectors in terms of signal amplitude can be greatly improved when there is a built-in signal gain mechanism. The authors describe an avalanche gain mechanism which is achieved by introducing stacked intrinsic, p-type, and n-type layers into the diode structure. They replaced the intrinsic layer of the conventional p-i-n diode with i 1 -p-i 2 -n-i 3 multilayers. The i 2 layer (typically 1 ∼ 3 microm) achieves an electric field > 10 6 V/cm, while maintaining the p-i interfaces to the metallic contact at electric fields 4 V/cm, when the diode is fully depleted. For use in photo-diode applications the whole structure is less than 10 microm thick. Avalanche gains of 10 ∼ 50 can be obtained when the diode is biased to ∼ 500 V. Also, dividing the electrodes to strips of 2 microm width and 20 microm pitch reduced the leakage current up to an order of magnitude, and increased light transmission without creating inactive regions

  10. Characterization of Lateral Structure of the p-i-n Diode for Thin-Film Silicon Solar Cell.

    Science.gov (United States)

    Kiaee, Zohreh; Joo, Seung Ki

    2018-03-01

    The lateral structure of the p-i-n diode was characterized for thin-film silicon solar cell application. The structure can benefit from a wide intrinsic layer, which can improve efficiency without increasing cell thickness. Compared with conventional thin-film p-i-n cells, the p-i-n diode lateral structure exploited direct light irradiation on the absorber layer, one-side contact, and bifacial irradiation. Considering the effect of different carrier lifetimes and recombinations, we calculated efficiency parameters by using a commercially available simulation program as a function of intrinsic layer width, as well as the distance between p/i or n/i junctions to contacts. We then obtained excellent parameter values of 706.52 mV open-circuit voltage, 24.16 mA/Cm2 short-circuit current, 82.66% fill factor, and 14.11% efficiency from a lateral cell (thickness = 3 μm; intrinsic layer width = 53 μm) in monofacial irradiation mode (i.e., only sunlight from the front side was considered). Simulation results of the cell without using rear-side reflector in bifacial irradiation mode showed 11.26% front and 9.72% rear efficiencies. Our findings confirmed that the laterally structured p-i-n cell can be a potentially powerful means for producing highly efficient, thin-film silicon solar cells.

  11. Application of PIN diode to soft x-ray measurement in TRIAM-1M

    International Nuclear Information System (INIS)

    Ohinata, Hirohiko; Kawasaki, Shoji; Kamitaki, Eriko; Moriyama, Shin-ichi; Nagao, Akihiro; Nakamura, Kazuo; Nakamura, Yukio; Hiraki, Naoji; Itoh, Satoshi.

    1989-01-01

    The soft X-ray in TRIAM-1M is measured with a PIN diode array in an effort to examine the internal MHD structures in tokamak plasma in TRIAM-1M. A magnetic probe is also used to make measurements. Based on these measurements, the region where sawtooth oscilations appears is identified in the Hugill diagram. The safety factor at the plasma surface at the time of the appearance of sawtooth oscillations is found to be larger than that at the time of its disappearance, indicating that the current density distribution becomes steeper with time. The time changes in the distribution of electron density and q-value are roughly calculated from those in the safety factor and inversion radius of sawtooth oscillations to confirm the above results. In low-q discharges, current disruption occurs either through the growth of the m=2/n=1 mode or through the interaction between the m=2/n=1 mode and m=3/n=2 mode. Current disruption in high-density discharges seems to occur through the growth of the m=2/n=1 mode. The rate of growth of sinusoidal oscillations is found to be only slightly dependent on the density. (N.K.)

  12. Frequency Reconfigurable Circular Patch Antenna with an Arc-Shaped Slot Ground Controlled by PIN Diodes

    Directory of Open Access Journals (Sweden)

    Yao Chen

    2017-01-01

    Full Text Available In this paper, a compact frequency reconfigurable circular patch antenna with an arc-shaped slot loaded in the ground layer is proposed for multiband wireless communication applications. By controlling the ON/OFF states of the five PIN diodes mounted on the arc-shaped slot, the effective length of the arc-shaped slot and the effective length of antennas current are changed, and accordingly six-frequency band reconfiguration can be achieved. The simulated and measured results show that the antenna can operate from 1.82 GHz to 2.46 GHz, which is located in DCS1800 (1.71–1.88 GHz, UMTS (2.11–2.20 GHz, WiBro (2.3–2.4 GHz, and Bluetooth (2.4–2.48 GHz frequency bands and so forth. Compared to the common rectangular slot circular patch antenna, the proposed arc-shaped slot circular patch antenna not only has a better rotational symmetry with the circular patch and substrate but also has more compact size. For the given operating frequency at 1.82 GHz, over 55% area reduction is achieved in this design with respect to the common design with rectangular slot. Since the promising frequency reconfiguration, this antenna may have potential applications in modern multiband and multifunctional mobile communication systems.

  13. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    van Wanum, Maurice; Lebouille, Tom; Visser, Guido; van Vliet, Frank Edward

    2009-01-01

    Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are

  14. Design and construction of a novel 1H/19F double-tuned coil system using PIN-diode switches at 9.4T.

    Science.gov (United States)

    Choi, Chang-Hoon; Hong, Suk-Min; Ha, YongHyun; Shah, N Jon

    2017-06-01

    A double-tuned 1 H/ 19 F coil using PIN-diode switches was developed and its performance evaluated. The is a key difference from the previous developments being that this design used a PIN-diode switch in series with an additionally inserted inductor in parallel to one of the capacitors on the loop. The probe was adjusted to 19 F when the reverse bias voltage was applied (PIN-diode OFF), whilst it was switched to 1 H when forward current was flowing (PIN-diode ON). S-parameters and Q-factors of single- and double-tuned coils were examined and compared with/without a phantom on the bench. Imaging experiments were carried out on a 9.4T preclinical scanner. All coils were tuned at resonance frequencies and matched well. It is shown that the Q-ratio and SNR of double-tuned coil at 19 F frequency are nearly as good as those of a single-tuned coil. Since the operating frequency was tuned to 19 F when the PIN-diodes were turned off, losses due to PIN-diodes were substantially lower resulting in the provision of excellent image quality of X-nuclei. Copyright © 2017 Elsevier Inc. All rights reserved.

  15. Simulation of Si P-i-N diodes for use in a positron emission tomography detector module

    International Nuclear Information System (INIS)

    Bailey, M.J.; University of Wollongong, NSW; Rosenfeld, A.; Lerch, M.; Taylor, G.; Heiser, G.

    2000-01-01

    Full text: Current Positron Emission Tomography (PET) systems consist of scintillation crystals optically coupled to photomultiplier tubes with associated electronics used to detect photons generated within the scintillator. The cost of photomultiplier tubes (PMTs) is considerable and is the major factor in the cost of PET systems. It has been suggested that Si P-i-N diodes can replace PMTs and provide Depth of Interaction (DOI) information for improved spatial resolution. Si P-i-N diodes of 25mm x 300μm and 3mm x 300μm cross sectional area were simulated using a 2D Monte Carlo program (PClD V5) from the UNSW photovoltics group. The diffusion lengths were varied from 0.5μm to 5μm and the charge collection characteristics of the diodes were observed. A 400nm monochromatic light source was used for the excitation as an approximation of the mean wavelength output from LSO crystal. The diodes were reverse biased with voltages 40V, 20V and 10V. The optimum diffusion length of up to 2μm and bias voltage of 40V were determined using the electric field, current density, carrier density and potential distribution results. These parameters will be used for the design of a device for optimal charge collection capabilities for the wavelengths encountered in PET applications. Further studies need to be conducted using spectra from LSO rather than a monochromatic source. The response of various Si P-i-N diodes to a monochromatic light source have been modeled in order to design a device for application in a PET detector module for DOI measurements. The charge collection within the first 2μm has been emphasized due to the strong absorption of photons from LSO near the surface.Copyright (2000) Australasian College of Physical Scientists and Engineers in Medicine

  16. Lead Halide Perovskite Photovoltaic as a Model p-i-n Diode.

    Science.gov (United States)

    Miyano, Kenjiro; Tripathi, Neeti; Yanagida, Masatoshi; Shirai, Yasuhiro

    2016-02-16

    The lead halide perovskite photovoltaic cells, especially the iodide compound CH3NH3PbI3 family, exhibited enormous progress in the energy conversion efficiency in the past few years. Although the first attempt to use the perovskite was as a sensitizer in a dye-sensitized solar cell, it has been recognized at the early stage of the development that the working of the perovskite photovoltaics is akin to that of the inorganic thin film solar cells. In fact, theoretically perovskite is always treated as an ordinary direct band gap semiconductor and hence the perovskite photovoltaics as a p-i-n diode. Despite this recognition, research effort along this line of thought is still in pieces and incomplete. Different measurements have been applied to different types of devices (different not only in the materials but also in the cell structures), making it difficult to have a coherent picture. To make the situation worse, the perovskite photovoltaics have been plagued by the irreproducible optoelectronic properties, most notably the sweep direction dependent current-voltage relationship, the hysteresis problem. Under such circumstances, it is naturally very difficult to analyze the data. Therefore, we set out to make hysteresis-free samples and apply time-tested models and numerical tools developed in the field of inorganic semiconductors. A series of electrical measurements have been performed on one type of CH3NH3PbI3 photovoltaic cells, in which a special attention was paid to ensure that their electronic reproducibility was better than the fitting error in the numerical analysis. The data can be quantitatively explained in terms of the established models of inorganic semiconductors: current/voltage relationship can be very well described by a two-diode model, while impedance spectroscopy revealed the presence of a thick intrinsic layer with the help of a numerical solver, SCAPS, developed for thin film solar cell analysis. These results point to that CH3NH3PbI3 is an

  17. BPW34 Commercial p-i-n Diodes for High-Level 1-MeV Neutron Equivalent Fluence Monitoring

    CERN Document Server

    Ravotti, F; Moll, M; Saigne, F

    2008-01-01

    The BPW34 p-i-n diode was characterized at CERN in view of its utilization as radiation monitor at the LHC to cover the broad 1-MeV neutron equivalent fluence (Phieq) range expected for the LHC machine and experiments during operation. Electrical measurements for both forward and reverse bias were used to characterize the device and to understand its behavior under irradiation. When the device is powered forward, a sensitivity to fast hadrons for Phieq > 2 times1012 cm-2 has been observed. With increasing particle fluences the forward I- V characteristics of the diode shifts towards higher voltages. At Phieq > 3times1013 cm-2, the forward characteristic starts to bend back assuming a thyristor-like behavior. An explanation for this phenomenon is given in this article. Finally, detailed radiation-response curves for the forward bias-operation and annealing studies of the diode's forward voltage are presented for proton, neutron and gamma irradiation.

  18. Integrated chemical sensor array platform based on a light emitting diode, xerogel-derived sensor elements, and high-speed pin printing

    International Nuclear Information System (INIS)

    Cho, Eun Jeong; Bright, Frank V.

    2002-01-01

    We report a new, solid-state, integrated optical array sensor platform. By using pin printing technology in concert with sol-gel-processing methods, we form discrete xerogel-based microsensor elements that are on the order of 100 μm in diameter and 1 μm thick directly on the face of a light emitting diode (LED). The LED serves as the light source to excite chemically responsive luminophores sequestered within the doped xerogel microsensors and the analyte-dependent emission from within the doped xerogel is detected with a charge coupled device (CCD). We overcome the problem of background illumination from the LED reaching the CCD and the associated biasing that results by coating the LED first with a thin layer of blue paint. The thin paint layer serves as an optical filter, knocking out the LEDs red-edge spectral tail. The problem of the spatially-dependent fluence across the LED face is solved entirely by performing ratiometric measurements. We illustrate the performance of the new sensor scheme by forming an array of 100 discrete O 2 -responsive sensing elements on the face of a single LED. The combination of pin printing with an integrated sensor and light source platform results in a rapid method of forming (∼1 s per sensor element) reusable sensor arrays. The entire sensor array can be calibrated using just one sensor element. Array-to-array reproducibly is <8%. Arrays can be formed using single or multiple pins with indistinguishable analytical performance

  19. Sensitive pre-amplifier to load for Pin diodes; Pre-amplificador sensible a carga para diodos PIN

    Energy Technology Data Exchange (ETDEWEB)

    Jacobo V, R. Y.; Hernandez D, V. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98060 Zacatecas (Mexico); Ramirez J, F. J., E-mail: yoshimarv@gmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2013-10-15

    The electronic instrumentation is indispensable for the measurement and characterization of the radiation. By means of this essential characteristics of the radiation are determined, as activity and their energy components. The nuclear instrumentation is based on the technical characteristics of the radiation detectors and the electronic devices associates (amplifiers, ana logical and digital converters, multichannel analyzers, etc.) The radiation detectors are very important instruments in fields as the nuclear physics, medicine, radiological protection, industry and in other fields, since they are the only method to capture the radiation and to be able to quantify it in precise form. To detect radiation diverse detector types are used, as the semiconductor type, inside them are the photodiodes type Pin. In this work the results that were obtained of the design, simulation, construction and tests of a preamplifier that was designed starting from a photodiode type Pin are presented. The system was designed and simulated with a program for electronic circuits, in this were carried out many tests being obtained a compact design and achieving the best necessary characteristics for its optimization. With the results of the simulation phase the electronics phase was built, which was couples to a spectroscopic amplifier and a multichannel analyzer. The total of the system was evaluated analyzing its performance before a triple source of alphas. Of the tests phase we find that the system allows obtaining, in a multichannel analyzer, the pulses height spectrum, with a good resolution and with this was calibrated the multichannel analyzer.

  20. Gamma-ray vulnerability of light-emitting diodes injection-laser diodes and pin-photodiodes for 1.3 μm wavelength-fiber optics

    International Nuclear Information System (INIS)

    Breuze, G.; Serre, J.

    1992-01-01

    With the increasing use of optical data links, it becomes essential to test for radiation vulnerability not only the transmission support - fiber and cable - but also fiber-end electro-optical components that could be exposed to hostile environment. Presently there is a significant number of radiation tests of optical fibers [1,2,3[. Here are only given a few results obtained on gradient index multimode fibers with and without phosphor. These data provide an important contribution to the improvement of all standard electro-optical pigtailed components working on the 1.3 μm wavelength: light-emitting diodes (LED), injection-laser diode modules (LDM) and pin-photodiodes (PD). Multicomponent LDM behaviour under CO 60 exposure was extensively tested. Hardened optical data links allow now to ensure medium data transmission rates on appreciable fiber - lengths despite medium steady - state gamma-ray exposure

  1. Luminescence in amorphous silicon p-i-n diodes under double-injection dispersive-transport-controlled recombination

    International Nuclear Information System (INIS)

    Han, D.; Wang, K.; Yeh, C.; Yang, L.; Deng, X.; Von Roedern, B.

    1997-01-01

    The temperature and electric-field dependence of the forward bias current and the electroluminescence (EL) in hydrogenated amorphous silicon (a-Si:H) p-i-n and n-i-p diodes have been studied. Both the current and the EL efficiency temperature dependence show three regions depending on either hopping-controlled or multiple-trapping or ballistic transport mechanisms. Comparing the thermalization-controlled geminate recombination processes of photoluminescence to the features of EL, the differences can be explained by transport-controlled nongeminate recombination in trap-rich materials. copyright 1997 The American Physical Society

  2. Measurements of 1/f noise in A-Si:H pin diodes and thin-film-transistors

    International Nuclear Information System (INIS)

    Cho, Gyuseong; Drewery, J.S.; Fujieda, I.; Jing, T.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Wildermuth, D.; Street, R.A.

    1990-05-01

    We measured the equivalent noise charge of a-Si:H pin diodes (5 ∼ 45μm i-layer) with a pulse shaping time of 2.5 μsec under reverse biases up to 30 V/μm and analyzed it as a four component noise source. The frequency spectra of 1/f noise on the soft-breakdown region and of the Nyquist noise from contact resistance of diodes were measured. Using the conversion equations for a CR-RC shaper, we identified the contact resistance noise and the 1/f noise as the main noise sources in the low bias and high bias regions respectively. The 1/f noise of a-Si:H TFTs with channel length of 15 μm was measured to be the dominant component up to ∼100kHz for both saturation and linear regions. 15 refs., 7 figs

  3. Silicon PIN diode based electron-gamma coincidence detector system for Noble Gases monitoring.

    Science.gov (United States)

    Khrustalev, K; Popov, V Yu; Popov, Yu S

    2017-08-01

    We present a new second generation SiPIN based electron-photon coincidence detector system developed by Lares Ltd. for use in the Noble Gas measurement systems of the International Monitoring System and the On-site Inspection verification regimes of the Comprehensive Nuclear-Test Ban Treaty (CTBT). The SiPIN provide superior energy resolution for electrons. Our work describes the improvements made in the second generation detector cells and the potential use of such detector systems for other applications such as In-Situ Kr-85 measurements for non-proliferation purposes. Copyright © 2017 Elsevier Ltd. All rights reserved.

  4. Silicon PIN diode hybrid arrays for charged particle detection: Building blocks for vertex detectors at the SSC

    International Nuclear Information System (INIS)

    Kramer, G.; Gaalema, S.; Shapiro, S.L.; Dunwoodie, W.M.; Arens, J.F.; Jernigan, J.G.

    1989-05-01

    Two-dimensional arrays of solid state detectors have long been used in visible and infrared systems. Hybrid arrays with separately optimized detector and readout substrates have been extensively developed for infrared sensors. The characteristics and use of these infrared readout chips with silicon PIN diode arrays produced by MICRON SEMICONDUCTOR for detecting high-energy particles are reported. Some of these arrays have been produced in formats as large as 512 /times/ 512 pixels; others have been radiation hardened to total dose levels beyond 1 Mrad. Data generation rates of 380 megasamples/second have been achieved. Analog and digital signal transmission and processing techniques have also been developed to accept and reduce these high data rates. 9 refs., 15 figs., 2 tabs

  5. Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

    Energy Technology Data Exchange (ETDEWEB)

    Portier, Benjamin; Pardo, Fabrice; Péré-Laperne, Nicolas; Steveler, Emilie; Dupuis, Christophe; Bardou, Nathalie; Lemaître, Aristide; Pelouard, Jean-Luc, E-mail: jean-luc.pelouard@lpn.cnrs.fr [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis (France); Vest, Benjamin; Jaeck, Julien; Rosencher, Emmanuel [ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France); Haïdar, Riad [ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France); École Polytechnique, Département de Physique, F-91128 Palaiseau (France)

    2014-07-07

    Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).

  6. Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

    International Nuclear Information System (INIS)

    Portier, Benjamin; Pardo, Fabrice; Péré-Laperne, Nicolas; Steveler, Emilie; Dupuis, Christophe; Bardou, Nathalie; Lemaître, Aristide; Pelouard, Jean-Luc; Vest, Benjamin; Jaeck, Julien; Rosencher, Emmanuel; Haïdar, Riad

    2014-01-01

    Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).

  7. Measurement of parameters for the quality control of X-ray units by using PIN diodes and a personal computer

    International Nuclear Information System (INIS)

    Ramirez, F.; Gaytan, E.; Mercado, I.; Estrada, M.; Cerdeira, A.

    2000-01-01

    The design of a new system for the measurement of the main parameters of X-ray units used in medicine is presented. The system measures automatically the exposure time, high voltage applied, waveform of the detected signal, exposure ratio and the total exposure (dose). The X-ray detectors employed are PIN diodes developed at CINVESTAV, the measurements are done in one single shot, without invasion of the X-ray unit. The results are shown in the screen of the computer and can be saved in a file for later analysis. The proposed system is intended to be used in the quality control of X-rays units for clinical radio-diagnosis. It is a simple and inexpensive equipment if compared with available commercial equipment that uses ionization chambers and accurate electrometers that small facilities and hospitals cannot afford

  8. Application of semiconductor MOSFET and pin diode dosimeters to epithermal neutron beam dose distribution measurements in phantoms

    International Nuclear Information System (INIS)

    Carolan, M.G.; Wallace, S.A.; Allen, B.J.; Rosenfeld, A.B.; Mathur, J.N.

    1996-01-01

    For any clinical application of Boron Neutron Capture Therapy (BNCT) fast and accurate dose calculations will be required for treatment planning. Such calculations are also necessary for the planning and interpretation of results from pre-clinical and clinical trials where the speed of calculation is not so critical. A dose calculation system based on the MCNP Monte Carlo Neutron transport code has been developed by Wallace. This system takes image data from CT scans and constructs a voxel based geometrical model for input into MCNP. To validate the calculations, a number of phantoms were constructed and exposed in the HB11 epithermal neutron beam at the HFR of the CEC Joint Research Centre in Petten. The doses recorded by arrays of PIN diode neutron dosimeters and MOSFET gamma dosimeters in these phantoms were compared with the calculated results from the MCNP dose planning system. Initial results have been reported elsewhere. Poster 197. (author)

  9. Awake craniotomy using electromagnetic navigation technology without rigid pin fixation.

    Science.gov (United States)

    Morsy, Ahmed A; Ng, Wai Hoe

    2015-11-01

    We report our institutional experience using an electromagnetic navigation system, without rigid head fixation, for awake craniotomy patients. The StealthStation® S7 AxiEM™ navigation system (Medtronic, Inc.) was used for this technique. Detailed preoperative clinical and neuropsychological evaluations, patient education and contrast-enhanced MRI (thickness 1.5mm) were performed for each patient. The AxiEM Mobile Emitter was typically placed in a holder, which was mounted to the operating room table, and a non-invasive patient tracker was used as the patient reference device. A monitored conscious sedation technique was used in all awake craniotomy patients, and the AxiEM Navigation Pointer was used for navigation during the procedure. This offers the same accuracy as optical navigation, but without head pin fixation or interference with intraoperative neurophysiological techniques and surgical instruments. The application of the electromagnetic neuronavigation technology without rigid head fixation during an awake craniotomy is accurate, and offers superior patient comfort. It is recommended as an effective adjunctive technique for the conduct of awake surgery. Copyright © 2015 Elsevier Ltd. All rights reserved.

  10. Transient current changes induced in pin-diodes by nanosecond electron pulses

    International Nuclear Information System (INIS)

    Leonhardt, J.W.; Goldner, R.; Bos, J.; Mehnert, R.

    1984-01-01

    The electron pulse technique can be applied as a diagnostic method to measure charge carrier lifetimes, diffusion length or junction width in semiconductor p + -i-n + diodes. The described effect of the pulse length dependence on the electron energy might be of importance as an energy monitor for pulsed electron accelerators. (author)

  11. Laser diode technology for coherent communications

    Science.gov (United States)

    Channin, D. J.; Palfrey, S. L.; Toda, M.

    1989-01-01

    The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.

  12. GaAs Schottky versus p/i/n diodes for pixellated X-ray detectors

    CERN Document Server

    Bourgoin, J C

    2002-01-01

    We discuss the performances of GaAs p/i/n structures and Schottky barriers for application as photodetectors for high-energy photons. We compare the magnitude of the leakage current and the width of the depleted region for a given reverse bias. We mention the effect of states present at the metal-semiconductor interface on the extension of the space charge region in Schottky barriers. We illustrate this effect by a description of the capacitance behaviour of a Au-GaAs barrier under gamma irradiation.

  13. Precision Spectroscopy, Diode Lasers, and Optical Frequency Measurement Technology

    Science.gov (United States)

    Hollberg, Leo (Editor); Fox, Richard (Editor); Waltman, Steve (Editor); Robinson, Hugh

    1998-01-01

    This compilation is a selected set of reprints from the Optical Frequency Measurement Group of the Time and Frequency Division of the National Institute of Standards and Technology, and consists of work published between 1987 and 1997. The two main programs represented here are (1) development of tunable diode-laser technology for scientific applications and precision measurements, and (2) research toward the goal of realizing optical-frequency measurements and synthesis. The papers are organized chronologically in five, somewhat arbitrarily chosen categories: Diode Laser Technology, Tunable Laser Systems, Laser Spectroscopy, Optical Synthesis and Extended Wavelength Coverage, and Multi-Photon Interactions and Optical Coherences.

  14. Results from a 64-pixel PIN-diode detector system for low-energy beta-electrons

    Energy Technology Data Exchange (ETDEWEB)

    Wuestling, Sascha, E-mail: sascha.wuestling@kit.ed [Forschungszentrum Karlsruhe, Institut fuer Prozessdatenverarbeitung und Elektronik, Postfach 3640, 76021 Karlsruhe (Germany); Fraenkle, F.; Habermehl, F.; Renschler, P. [Universitaet Karlsruhe - TH, Institut fuer Experimentelle Kernphysik, Postfach 6980, 76128 Karlsruhe (Germany); Steidl, M [Forschungszentrum Karlsruhe, Institut fuer Kernphysik, Postfach 3640, 76021 Karlsruhe (Germany)

    2010-12-11

    The KATRIN neutrino mass experiment is based on a precise energy measurement ({Delta}E/E=5x10{sup -5}) of electrons emerging from tritium beta decay (E{sub max}=18.6 keV). This is done by a large electrostatic retarding spectrometer (MAC-E Filter), which is followed by an electron detector. Key requirements for this detector are a large sensitive area ({approx}80 cm{sup 2}), a certain energy resolution ({Delta}E=600 eV - 18.6 keV) but also a certain spatial resolution ({approx}3 mm), which leads to a multi-pixel design. As a tentative design on the way to the final detector, but also for operational service on the so-called pre-spectrometer experiment, a detector system with a reduced size (16 cm{sup 2}) and a reduced pixel number (64), making use of a monolithic segmented silicon PIN diode, was designed and built. While the design and very first measurements have been presented in Wuestling et al. , this publication shows the operational performance of the detector system. The robust concept of the electronics allowed adaptation to mechanically different experimental setups. The spacial resolution of the detector system proved to be essential in examining Penning trap induced background and other effects in the pre-spectrometer experiment. The detector performance test runs include energy resolution and calibration, background rates, correlation between pixels (crosstalk), spatially resolved rate analysis, and a dead-layer measurement . The detector allows for background searches with a sensitivity as low as 1.3x10{sup -3} cps/cm{sup 2} in the energy range of 20 keV. This allows the pre-spectrometer to be characterized with e-gun illumination with a signal to background ratio of better than 10{sup 5} and the search for ultra low Penning discharge emissions.

  15. Results from a 64-pixel PIN-diode detector system for low-energy beta-electrons

    Science.gov (United States)

    Wuestling, Sascha; Fraenkle, F.; Habermehl, F.; Renschler, P.; Steidl, M.

    2010-12-01

    The KATRIN neutrino mass experiment is based on a precise energy measurement (Δ E/ E=5×10 -5) of electrons emerging from tritium beta decay ( Emax=18.6 keV). This is done by a large electrostatic retarding spectrometer (MAC-E Filter), which is followed by an electron detector. Key requirements for this detector are a large sensitive area (˜80 cm 2), a certain energy resolution (Δ E=600 eV @ 18.6 keV) but also a certain spatial resolution (˜3 mm), which leads to a multi-pixel design. As a tentative design on the way to the final detector, but also for operational service on the so-called pre-spectrometer experiment, a detector system with a reduced size (16 cm 2) and a reduced pixel number (64), making use of a monolithic segmented silicon PIN diode, was designed and built. While the design and very first measurements have been presented in Wuestling et al. [6], this publication shows the operational performance of the detector system. The robust concept of the electronics allowed adaptation to mechanically different experimental setups. The spacial resolution of the detector system proved to be essential in examining Penning trap induced background and other effects in the pre-spectrometer experiment. The detector performance test runs include energy resolution and calibration, background rates, correlation between pixels (crosstalk), spatially resolved rate analysis, and a dead-layer measurement [7]. The detector allows for background searches with a sensitivity as low as 1.3×10 -3 cps/cm 2 in the energy range of 20 keV. This allows the pre-spectrometer to be characterized with e-gun illumination with a signal to background ratio of better than 10 5 and the search for ultra low Penning discharge emissions.

  16. Recombination centers and electrical characteristics in silicon power p-i-n diodes irradiated with high energy electrons

    International Nuclear Information System (INIS)

    Fuochi, P.G.; Martelli, A.; Passerini, B.; Zambelli, M.

    1988-01-01

    Recombination centers introduced by irradiation with 12 MeV electrons in large area silicon diodes with p-i-n structure are studied with the Deep Level Transient Spectroscopy technique (DLTS). The effects of these levels on the electrical characteristics of the devices are related to their position Esub(t) in the silicon forbidden gap, their concentration and their electron capture cross section. Changes of defect configuration during an annealing process at 360 0 C have been observed and a detailed analysis of the DLTS spectra has shown a complex defect pattern. Four major recombination centers have been identified: Esub(c) - Esub(t) = 0.17 eV, Esub(c) - Esub(t) = 0.19 eV, Esub(c) -Esub(t) 0.31 eV, Esub(c) - Esub(t) = 0.39 eV, where Esub(c) is the energy corresponding to the lower limit of the conduction band. The first energy level, known as A-center, is the dominant recombination level controlling the minority carrier lifetime after room temperature irradiation. As the annealing proceeds the center at Esub(c) - Esub(t) = 0.31 eV becomes the dominant one. The complex structure of the centers has been studied and demonstrated with the aid of proper modelling implemented on a set of numerical simulation tools. In this way it has been possible to analyze more accurately the defect kinetics during annealing. The study of the defect behaviour during the annealing process has resulted in an improved application of electron irradiation as a standard production technique in the manufacturing process of high power devices. (author)

  17. Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

    International Nuclear Information System (INIS)

    Sirkeli, Vadim P; Al-Daffaie, Shihab; Oprea, Ion; Küppers, Franko; Hartnagel, Hans L; Yilmazoglu, Oktay; Ong, Duu Sheng

    2017-01-01

    Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm −2 . It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm −2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier. (paper)

  18. Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p-i-n diodes

    Science.gov (United States)

    Hayashi, Shohei; Naijo, Takanori; Yamashita, Tamotsu; Miyazato, Masaki; Ryo, Mina; Fujisawa, Hiroyuki; Miyajima, Masaaki; Senzaki, Junji; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

    2017-08-01

    Stacking faults expanded by the application of forward current to 4H-SiC p-i-n diodes were observed using a transmission electron microscope to investigate the expansion origin. It was experimentally confirmed that long-zonal-shaped stacking faults expanded from basal-plane dislocations converted into threading edge dislocations. In addition, stacking fault expansion clearly penetrated into the substrate to a greater depth than the dislocation conversion point. This downward expansion of stacking faults strongly depends on the degree of high-density minority carrier injection.

  19. Monte Carlo simulation of THz radiation from GaAs p-i-n diodes under high electric fields using an extended valley model

    International Nuclear Information System (INIS)

    Dinh Nhu Thao

    2008-01-01

    We have applied a self-consistent ensemble Monte Carlo simulation procedure using an extended valley model to consider the THz radiation from GaAs p-i-n diodes under high electric fields. The present calculation has shown an important improvement of the numerical results when using this model instead of the usual valley model. It has been shown the importance of the full band-structure in the simulation of processes in semiconductors, especially under the influence of high electric fields. (author)

  20. Dual-polarization wavelength conversion of 16-QAM signals in a single silicon waveguide with a lateral p-i-n diode [Invited

    DEFF Research Database (Denmark)

    Da Ros, Francesco; Gajda, Andrzej; Liebig, Erik

    2018-01-01

    with an optical signal-to-noise ratio penalty below 0.7 dB. High-quality converted signals are generated thanks to the low polarization dependence (≤0.5 dB) and the high conversion efficiency (CE) achievable. The strong Kerr nonlinearity in silicon and the decrease of detrimental free-carrier absorption due......A polarization-diversity loop with a silicon waveguide with a lateral p-i-n diode as a nonlinear medium is used to realize polarization insensitive four-wave mixing. Wavelength conversion of seven dual-polarization 16-quadrature amplitude modulation (QAM) signals at 16 GBd is demonstrated...

  1. Development of 3-Pin Fuel Test Loop and Utilization Technology

    International Nuclear Information System (INIS)

    Lee, Chung Young; Sim, B. S.; Lee, C. Y.

    2007-06-01

    The principal contents of this project are to design, fabricate and install the steady-state fuel test loop in HANARO for nuclear technology development. Procurement and, fabrication of main equipment, licensing and installation for fuel test loop have been performed. Following contents are described in the report. 1. Design - Design of the In-pile system and Out pile system 2. Fabrication and procurement of the equipment - Fabrication of the In-pile system and In-pool piping - Fabrication and procurement of the equipment of the out-pile system 3. Acquisition of the license - Preparation of the safety analysis report and acquisition of the license - Pre-service inspection of the facility 4. Installation and commissioning - Installation of the FTL - Development of the commissioning procedure

  2. Development of a PIN diode based on-line measurement system for Radon (222Rn) and Thoron (220Rn) in environment

    International Nuclear Information System (INIS)

    Ashokkumar, P.; Chaudhury, Probal; Sumesh, C.G.; Sahoo, B.K.; Gaware, J.J.; Mayya, Y.S.

    2014-01-01

    Radon, thoron and their progenies are universally present in outdoor air, and can reach higher levels in indoor air due to poor ventilation. Several instruments have been developed for accurate measurement of radon and thoron in the environment. Semiconductor detector based system employing spectroscopic method has been proved to be the best among them. A PIN diode based electrostatic collection type online real-time instrument has been developed in Bhabha Atomic Research Centre for simultaneous measurement of radon and thoron in an environment while both 222 Rn and 220 Rn are present. This system can be used for determination of radon and thoron concentrations at residence or workplace. Furthermore, since the 222 Rn and 220 Rn are differentiated from each other through spectroscopy, this monitor can be used even in a mixed radon/thoron environment

  3. New Optoelectronic Technology Simplified for Organic Light Emitting Diode (OLED

    Directory of Open Access Journals (Sweden)

    Andre F. S. Guedes

    2014-06-01

    Full Text Available The development of Organic Light Emitting Diode (OLED, using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene, PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis, Optical Parameters (OP and Scanning Electron Microscopy (SEM. In addition, the thin film obtained by the deposition of PANI, prepared in perchloric acid solution, was identified through PANI-X1. The result obtained by UV-Vis has demonstrated that the Quartz/ITO/PEDOT/PANI-X1 layer does not have displacement of absorption for wavelengths greaters after spin-coating and electrodeposition. Thus, the spectral irradiance of the OLED informed the irradiance of 100 W/m2, and this result, compared with the standard Light Emitting Diode (LED, has indicated that the OLED has higher irradiance. After 1000 hours of electrical OLED tests, the appearance of nanoparticles visible for images by SEM, to the migration process of organic semiconductor materials, was present, then. Still, similar to the phenomenon of electromigration observed in connections and interconnections of microelectronic devices, the results have revealed a new mechanism of migration, which raises the passage of electric current in OLED.

  4. Sensitive silicon PIN-diode dosimeter for fast neutrons and method to control and increase its sensitivity

    International Nuclear Information System (INIS)

    Swinehart, P.R.; Swartz, J.M.

    1978-01-01

    With the personnel dosimeter, applicable e.g. in medicine, a dose of 0.1 rad for neutrons with an energy greater than 10 keV can be detected. In the range between 0.1 and 20 rad sensitivity is increased to 5 mV/rad. This sensitivity can be achieved by distributing the mass of the semiconductor material of the diode or equal to four times the reciprocal base width. Appropriate dimensions are 750 μm for the edge length of the end surface resp. diameter and 750 μm up to 5000 μm for the base width. (DG) [de

  5. 11.72-sq cm Active-Area Wafer Interconnected PiN Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 MA(sup 2)-s

    Science.gov (United States)

    2012-01-30

    calculated action exceeded 1.7 MA2 -s. Preliminary efforts on high voltage diode interconnection have produced quarter wafer interconnected PiN...was packaged in a “hockey-puck” configuration and pulsed to 64 kA, dissipating 382 J with a calculated action exceeding 1.7 MA2 -s. II. FULL...epitaxial layers are utilized. 11.72-cm2 Active-area Wafer Interconnected PiN Diode pulsed at 64 kA dissipates 382 J and exhibits an action of 1.7 MA2 -s

  6. Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi-level pinning at the molecule-metal interface.

    Science.gov (United States)

    Lenfant, S; Guerin, D; Tran Van, F; Chevrot, C; Palacin, S; Bourgoin, J P; Bouloussa, O; Rondelez, F; Vuillaume, D

    2006-07-20

    We report the synthesis and characterization of molecular rectifying diodes on silicon using sequential grafting of self-assembled monolayers of alkyl chains bearing a pi group at their outer end (Si/sigma-pi/metal junctions). We investigate the structure-performance relationships of these molecular devices, and we examine the extent to which the nature of the pi end group (change in the energy position of their molecular orbitals) drives the properties of these molecular diodes. Self-assembled monolayers of alkyl chains (different chain lengths from 6 to 15 methylene groups) functionalized by phenyl, anthracene, pyrene, ethylene dioxythiophene, ethylene dioxyphenyl, thiophene, terthiophene, and quaterthiophene were synthesized and characterized by contact angle measurements, ellipsometry, Fourier transform infrared spectroscopy, and atomic force microscopy. We demonstrate that reasonably well-packed monolayers are obtained in all cases. Their electrical properties were assessed by dc current-voltage characteristics and high-frequency (1-MHz) capacitance measurements. For all of the pi groups investigated here, we observed rectification behavior. These results extend our preliminary work using phenyl and thiophene groups (Lenfant et al., Nano Lett. 2003, 3, 741). The experimental current-voltage curves were analyzed with a simple analytical model, from which we extracted the energy position of the molecular orbital of the pi group in resonance with the Fermi energy of the electrodes. We report experimental studies of the band lineup in these silicon/alkyl pi-conjugated molecule/metal junctions. We conclude that Fermi-level pinning at the pi group/metal interface is mainly responsible for the observed absence of a dependence of the rectification effect on the nature of the pi groups, even though the groups examined were selected to have significant variations in their electronic molecular orbitals.

  7. Fuel pin transient behavior technology applied to safety analyses. Presentation to AEC Regulatory Staff 4th Regulatory Briefing on safety technology, Washington, D.C., November 19--20, 1974

    International Nuclear Information System (INIS)

    1974-11-01

    Information is presented concerning LMFBR fuel pin performance requirements and evaluation; fuels behavior codes with safety interfaces; performance evaluations; ex-reactor materials and simulation tests; models for fuel pin failure; and summary of continuing fuels technology tasks. (DCC)

  8. CdS-based p-i-n diodes using indium and copper doped CdS films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Hernandez-Como, N; Berrellez-Reyes, F; Mizquez-Corona, R; Ramirez-Esquivel, O; Mejia, I; Quevedo-Lopez, M

    2015-01-01

    In this work we report a method to dope cadmium sulfide (CdS) thin films using pulsed laser deposition. Doping is achieved during film growth at substrate temperatures of 100 °C by sequential deposition of the CdS and the dopant material. Indium sulfide and copper disulfide targets were used as the dopant sources for n-type and p-type doping, respectively. Film resistivities as low as 0.2 and 1 Ω cm were achieved for indium and copper doped films, respectively. Hall effect measurements demonstrated the change in conductivity type from n-type to p-type when the copper dopants are incorporated into the film. The controlled incorporation of indium or copper, in the undoped CdS film, results in substitutional defects in the CdS, which increases the electron and hole concentration up to 4 × 10 18 cm −3 and 3 × 10 20 cm −3 , respectively. The results observed with CdS doping can be expanded to other chalcogenides material compounds by just selecting different targets. With the optimized doped films, CdS-based p-i-n diodes were fabricated yielding an ideality factor of 4, a saturation current density of 2 × 10 −6 A cm −2 and a rectification ratio of three orders of magnitude at ±3 V. (paper)

  9. Establishment of technological basis for fabrication of U-Pu-Zr ternary alloy fuel pins for irradiation tests in Japan

    International Nuclear Information System (INIS)

    Kikuchi, Hironobu; Iwai, Takashi; Nakajima, Kunihisa; Arai, Yasuo; Nakamura, Kinya; Ogata, Takanari

    2011-01-01

    A high-purity Ar gas atmosphere glove box accommodating injection casting and sodium-bonding apparatuses was newly installed in the Plutonium Fuel Research Facility of Oarai Research and Development Center, Japan Atomic Energy Agency, in which several nitride and carbide fuel pins were fabricated for irradiation tests. The experiences led to the establishment of the technological basis of the fabrication of U-Pu-Zr alloy fuel pins for the first time in Japan. After the injection casting of the U-Pu-Zr alloy, the metallic fuel pins were fabricated by welding upper and lower end plugs with cladding tubes of ferritic-martensitic steel. Subsequent to the sodium bonding for filling the annular gap region between the U-Pu-Zr alloy and the cladding tube with the melted sodium, the fuel pins for irradiation tests are inspected. This paper shows the apparatuses and the technological basis for the fabrication of U-Pu-Zr alloy fuel pins for the irradiation test planned at the experimental fast test reactor Joyo. (author)

  10. Development of disassembly and pin chopping technology for FBR spent fuels

    International Nuclear Information System (INIS)

    Kobayashi, Tsuguyuki; Namba, Takashi; Kawabe, Yukinari; Washiya, Tadahiro

    2008-01-01

    Japan Atomic Power Company (JAPC) and Japan Atomic Energy Agency (JAEA) have been developing fuel disassembly and fuel pin chopping systems for a future Japanese commercial FBR. At first, the wrapper tube is cut by the slit-cut to pull it out, then the fuel pins are cut by the crop-cut at their end-plugs to separate them from the entrance nozzle. The pins are transferred to the magazine of the chopping machine. A series of tests were performed to develop this procedure. As the result of mechanical cutting tests, the CBN wheel was selected. The slit-cut tests were carried out to evaluated the cutting performance of the wheel. The wrapper tube is normally slit-cut in the circumferential direction. One CBN wheel could cut more than 5 fuel assemblies in this direction. The slit-cut in the axial direction is prepared as provision when the tube is difficult to put out. More work is needed to cut 5mm thick PNC-FMS plate in this direction without damaging the pins beneath it. As the result of the crop-cut tests of end-plugs made of ODS steel, the CBN wheel could cut the 61 pin bundle by two strokes. More work is needed to cut the 217 pin bundle. Fuel pin handling tests were performed to transfer them from the disassembly machine to the chopping machine. The Saucer tray was selected to receive the disassembled pins. All the pins were transferred and loaded into a magazine of the chopping machine. Fuel pin loading tests were conducted to optimize the magazine configuration to make the chopping length within 1.0±0.5 cm. In order to decrease the disturbance during chopping, the width of the magazine was adjusted to be 12 cm and installation of a height adjuster is favourable to control the free space above the pins. (author)

  11. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    International Nuclear Information System (INIS)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-01

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency (η TPV ) and a power density (PD) of η TPV = 19% and PD=0.58 W/cm 2 were measured for T radiator = 950 C and T diode = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be η TPV = 26% and PD = 0.75 W/cm 2 . These limits are extended to η TPV = 30% and PD = 0.85W/cm 2 if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are ∼10

  12. Pin Component Technology (V1.0) and Its C Interface

    National Research Council Canada - National Science Library

    Hissam, Scott; Ivers, James; Plakosh, Daniel; Wallnau, Kurt C

    2005-01-01

    .... Pin implements the container idiom for software components. Containers provide a pre-fabricated "shell" in which custom code executes and through which all interactions between custom code and its external environment are mediated...

  13. Setting for technological control of vibropacked uranium-plutonium fuel pins

    International Nuclear Information System (INIS)

    Golushko, V.V.; Semenov, A.L.; Chukhlova, O.P.; Kuznetsov, A.M.; Korchkov, Yu.N.; Kandrashina, T.A.

    1991-01-01

    Scanning set-up providing for control of fuel pins by quality of fuel distribution in them is described. The gamma absorption method of fuel density measurement and the method of its own radiation registration are applied. Scintillation detection blocks are used in the measuring equipment mainly consisting of standard CAMAC blocks. Automation of measurements is performed on the basis of the computer complex MERA-60. A complex of programs for automation of the procedures under way is developed, when the facility operates within the test production line of vibroracked uranium-plutonium fuel pins. 6 refs.; 4 figs.; 1 tabs

  14. Medical Applications of Space Light-Emitting Diode Technology--Space Station and Beyond

    Energy Technology Data Exchange (ETDEWEB)

    Whelan, H.T.; Houle, J.M.; Donohoe, D.L.; Bajic, D.M.; Schmidt, M.H.; Reichert, K.W.; Weyenberg, G.T.; Larson, D.L.; Meyer, G.A.; Caviness, J.A.

    1999-06-01

    Space light-emitting diode (LED) technology has provided medicine with a new tool capable of delivering light deep into tissues of the body, at wavelengths which are biologically optimal for cancer treatment and wound healing. This LED technology has already flown on Space Shuttle missions, and shows promise for wound healing applications of benefit to Space Station astronauts.

  15. Complete indium-free CW 200W passively cooled high power diode laser array using double-side cooling technology

    Science.gov (United States)

    Wang, Jingwei; Zhu, Pengfei; Liu, Hui; Liang, Xuejie; Wu, Dihai; Liu, Yalong; Yu, Dongshan; Zah, Chung-en; Liu, Xingsheng

    2017-02-01

    High power diode lasers have been widely used in many fields. To meet the requirements of high power and high reliability, passively cooled single bar CS-packaged diode lasers must be robust to withstand thermal fatigue and operate long lifetime. In this work, a novel complete indium-free double-side cooling technology has been applied to package passively cooled high power diode lasers. Thermal behavior of hard solder CS-package diode lasers with different packaging structures was simulated and analyzed. Based on these results, the device structure and packaging process of double-side cooled CS-packaged diode lasers were optimized. A series of CW 200W 940nm high power diode lasers were developed and fabricated using hard solder bonding technology. The performance of the CW 200W 940nm high power diode lasers, such as output power, spectrum, thermal resistance, near field, far field, smile, lifetime, etc., is characterized and analyzed.

  16. Steps towards a GaN nanowire based light emitting diode and its integration with Si-MOS technology

    Energy Technology Data Exchange (ETDEWEB)

    Limbach, Friederich

    2012-06-22

    This work is concerned with the realization and investigation of a light emitting diode (LED) structure within single GaN nanowires (NWs) and its integration with Si technology. To this end first a general understanding of the GaN NW growth is given. This is followed by investigations of the influence which doping species, such as Mg and Si, have on the growth of the NWs. The experience gathered in these studies set the basis for the synthesis of nominal p-i-n and n-i-p junctions in GaN NWs. Investigations of these structures resulted in the technologically important insight, that p-type doping with Mg is achieved best if it is done in the later NW growth stage. This implies that it is beneficial for a NW LED to place the p-type segment on the NW top. Another important component of an LED is the active zone where electron-hole recombination takes place. In the case of planar GaN LEDs, this is usually achieved by alloying Ga and In to form InGaN. In order to be able to control the growth under a variety of conditions, we investigate the growth of InGaN in the form of extended segments on top of GaN NWs, as well as multi quantum wells (MQWs) in GaN NWs. All the knowledge gained during these preliminary studies is harnessed to reach the overall goal: The realization of a GaN NW LED. Such structures are fabricated, investigated and processed into working LEDs. Finally, a report on the efforts of integrating III-nitride NW LEDs and Si based metaloxide-semiconductor field effect transistor (MOSFET) technology is given. This demonstrates the feasibility of the monolithic integration of both devices on the same wafer at the same time.

  17. Pin care

    Science.gov (United States)

    ... Drugs & Supplements Videos & Tools Español You Are Here: Home → Medical Encyclopedia → Pin care URL of this page: //medlineplus.gov/ency/patientinstructions/000481.htm Pin care To use the sharing features on this page, please enable JavaScript. Broken bones can be fixed in surgery with metal ...

  18. Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

    Science.gov (United States)

    Hayashi, Shohei; Yamashita, Tamotsu; Senzaki, Junji; Miyazato, Masaki; Ryo, Mina; Miyajima, Masaaki; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

    2018-04-01

    The origin of expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes was investigated by the stress-current test. At a stress-current density lower than 25 A cm-2, triangular stacking faults were formed from basal-plane dislocations in the epitaxial layer. At a stress-current density higher than 350 A cm-2, both triangular and long-zone-shaped stacking faults were formed from basal-plane dislocations that converted into threading edge dislocations near the interface between the epitaxial layer and the substrate. In addition, the conversion depth of basal-plane dislocations that expanded into the stacking fault was inside the substrate deeper than the interface. These results indicate that the conversion depth of basal-plane dislocations strongly affects the threshold stress-current density at which the expansion of stacking faults occurs.

  19. PINS Spectrum Identification Guide

    Energy Technology Data Exchange (ETDEWEB)

    A.J. Caffrey

    2012-03-01

    The Portable Isotopic Neutron Spectroscopy—PINS, for short—system identifies the chemicals inside munitions and containers without opening them, a decided safety advantage if the fill chemical is a hazardous substance like a chemical warfare agent or an explosive. The PINS Spectrum Identification Guide is intended as a reference for technical professionals responsible for the interpretation of PINS gamma-ray spectra. The guide is divided into two parts. The three chapters that constitute Part I cover the science and technology of PINS. Neutron activation analysis is the focus of Chapter 1. Chapter 2 explores PINS hardware, software, and related operational issues. Gamma-ray spectral analysis basics are introduced in Chapter 3. The six chapters of Part II cover the identification of PINS spectra in detail. Like the PINS decision tree logic, these chapters are organized by chemical element: phosphorus-based chemicals, chlorine-based chemicals, etc. These descriptions of hazardous, toxic, and/or explosive chemicals conclude with a chapter on the identification of the inert chemicals, e.g. sand, used to fill practice munitions.

  20. Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

    International Nuclear Information System (INIS)

    Schulze, J.; Oehme, M.; Werner, J.

    2012-01-01

    A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that – depending on the chosen operating point and device design – the diode serves as a broadband high speed photo detector, Franz–Keldysh effect modulator or light emitting diode.

  1. Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

    Energy Technology Data Exchange (ETDEWEB)

    Schulze, J., E-mail: schulze@iht.uni-stuttgart.de; Oehme, M.; Werner, J.

    2012-02-01

    A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that - depending on the chosen operating point and device design - the diode serves as a broadband high speed photo detector, Franz-Keldysh effect modulator or light emitting diode.

  2. Nanosecond pulse-width electron diode based on dielectric wall accelerator technology

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Quantang, E-mail: zhaoquantang@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Z.M.; Yuan, P.; Cao, S.C.; Shen, X.K.; Jing, Y. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Yu, C.S. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Li, Z.P.; Liu, M.; Xiao, R.Q. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zong, Y.; Wang, Y.R. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhao, H.W. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2013-11-21

    An electron diode using a short section of dielectric wall accelerator (DWA) has been under development at the Institute of Modern Physics (IMP), Chinese Academy of Sciences. Tests have been carried out with spark gap switches triggered by lasers. The stack voltage efficiency of a four-layer of Blumleins reached about 60–70% with gas filled spark gap switching. The generated pulse voltage of peak amplitude of 23 kV and pulse width of 5 ns is used to extract and accelerate an electron beam of 320 mA, measured by a fast current transformer. A nanosecond pulse width electron diode was achieved successfully. Furthermore, the principle of a DWA is well proven and the development details and discussions are presented in this article. -- Highlights: •The key technology of DWA, including switches and pulse forming lines were studied. •The SiC PCSS obtained from Shanghai Institute were tested. •Two layers ZIP lines (new structure) and four layers Blumlein lines were studied with laser triggered spark gap switches. •A nanosecond pulse-width electron diode based on DWA technologies is achieved and studied experimentally. •The principle of DWA is also proved by the diode.

  3. Design of a terahertz CW photomixer based on PIN and superlattice PIN devices

    DEFF Research Database (Denmark)

    Krozer, Viktor; Eichhorn, Finn

    2006-01-01

    We present the design of a photomixer LO based on standard and superlattice PIN diodes, operating at 1 THz. The design is based on a direct integration of a double slot antenna with the PIN device and a suitable matching circuit. The antenna has been designed together with a dielectric lens using...... Ansoft HFSS EM simulation. The large-signal PIN diode model employed in the work has been improved compared to our previously developed model presented earlier in a 3 THz design. We demonstrate that the antenna characteristic changes drastically with the device in place....

  4. Happy Pinning

    DEFF Research Database (Denmark)

    Fausing, Bent

    2012-01-01

    This is about Pinterest, but with a different approach than usual to social networks. Pinterest is an image site par excellence. The images are as Windows that open outwards and also lets us look inwards and displays the soul and heart, the unintentional or pre-conscious desires. Happy Pinning!...

  5. Benzoporphyrin derivative and light-emitting diode for use in photodynamic therapy: Applications of space light-emitting diode technology

    International Nuclear Information System (INIS)

    Whelan, Harry T.; Houle, John M.; Bajic, Dawn M.; Schmidt, Meic H.; Reichert, Kenneth W. II; Meyer, Glenn A.

    1998-01-01

    Photodynamic therapy (PDT) is a cancer treatment modality that recently has been applied as adjuvant therapy for brain tumors. PDT consists of intravenously injecting a photosensitizer, which preferentially accumulates in tumor cells, into a patient and then activating the photosensitizer with a light source. This results in free radical generation followed by cell death. The development of more effective light sources for PDT of brain tumors has been facilitated by applications of space light-emitting diode array technology; thus permitting deeper tumor penetration of light and use of better photosensitizers. Currently, the most commonly used photosensitizer for brain tumor PDT is Photofrin registered . Photofrin registered is a heterogeneous mixture of compounds derived from hematoporphyrin. Photofrin registered is activated with a 630 nm laser light and does destroy tumor cells in animal models and humans. However, treatment failure does occur using this method. Most investigators attribute this failure to the limited penetration of brain tissue by a 630 nm laser light and to the fact that Photofrin registered has only a minor absorption peak at 630 nm, meaning that only a small fraction of the chemical is activated. Benzoporphyrin Derivative Monoacid Ring A (BPD) is a new, second generation photosensitizer that can potentially improve PDT for brain tumors. BPD has a major absorption peak at 690 nm, which gives it two distinct advantages over Photofrin registered . First, longer wavelengths of light penetrate brain tissue more easily so that larger tumors could be treated, and second, the major absorption peak means that a larger fraction of the drug is activated upon exposure to light. In the first part of this project we have studied the tumoricidal effects of BPD in vitro using 2A9 canine glioma and U373 human glioblastoma cell cultures. Using light emitting diodes (LED) with a peak emission of 688 nm as a light source, cell kill of up to 86 percent was

  6. Technology Analysis of Global Smart Light Emitting Diode (LED Development Using Patent Data

    Directory of Open Access Journals (Sweden)

    Sangsung Park

    2017-08-01

    Full Text Available Technological developments related to smart light emitting diode (LED systems have progressed rapidly in recent years. In this paper, patent documents related to smart LED technology are collected and analyzed to understand the technology development of smart LED systems. Most previous studies of the technology were dependent on the knowledge and experience of domain experts, using techniques such as Delphi surveys or technology road-mapping. These approaches may be subjective and lack robustness, because the results can vary according to the selected expert groups. We therefore propose a new technology analysis methodology based on statistical modeling to obtain objective and relatively stable results. The proposed method consists of visualization based on Bayesian networks and a linear count model to analyze patent documents related to smart LED technology. Combining these results, a global hierarchical technology structure is created that can enhance the sustainability in smart LED system technology. In order to show how this methodology could be applied to real-world problems, we carry out a case study on the technology analysis of smart LED systems.

  7. Characterization and radiation studies of diode test structures in LFoundry CMOS technology

    Energy Technology Data Exchange (ETDEWEB)

    Daas, Michael; Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Pohl, David-Leon; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Muenchen (Germany)

    2016-07-01

    In order to prepare for the High Luminosity upgrade of the LHC, all subdetector systems of the ATLAS experiment will be upgraded. In preparation for this process, different possibilities for new radiation-hard and cost-efficient silicon sensor technologies to be used as part of hybrid pixel detectors in the ATLAS inner tracker are being investigated. One promising way to optimize the cost-efficiency of silicon-based pixel detectors is to use commercially available CMOS technologies such as the 150 nm process by LFoundry. In this talk, several CMOS pixel test structures, such as simple diodes and small pixel arrays, that were manufactured in this technology are characterized regarding general performance and radiation hardness and compared to each other as well as to the current ATLAS pixel detector.

  8. Luminescence and the light emitting diode the basics and technology of leds and the luminescence properties of the materials

    CERN Document Server

    Williams, E W; Pamplin, BR

    2013-01-01

    Luminescence and the Light Emitting Diode: The Basics and Technology of LEDS and the Luminescence Properties of the Materials focuses on the basic physics and technology of light emitting diodes (LEDS) and pn junction lasers as well as their luminescence properties. Optical processes in semiconductors and the useful devices which can be made are discussed. Comprised of 10 chapters, this book begins with an introduction to the crystal structure and growth, as well as the optical and electrical properties of LED materials. The detailed fabrication of the LED is then considered, along with the lu

  9. Conception and modelling of photo-detection pixels. PIN photodiodes conceived in amorphous silicon for particles detection; Conception et modelisation de pixels de photodetection: Photodiodes PIN en silicium amorphe en vue de leurs utilisations comme detecteurs de particules

    Energy Technology Data Exchange (ETDEWEB)

    Negru, R

    2008-06-15

    The research done has revealed that the a-Si:H is a material ideally suited for the detection of particles, while being resistant to radiation. It also has a low manufacturing cost, is compatible with existing technology and can be deposited over large areas. Thus, despite the low local mobility of charges (30 cm{sup 2}/V/s), a-Si:H is a material of particular interest for manufacturing high-energy particle detection pixels. As a consequence of this, we have studied the feasibility of an experimental pixel stacked structure based on a-Si:H as a basic sensor element for an electromagnetic calorimeter. The structure of such a pixel consists of different components. First, a silicon PIN diode in a-Si:H is fabricated, followed by a bias resistor and a decoupling capacitor. Before such a structure is made and in order to optimize its design, it is essential to have an efficient behavioural model of the various components. Thus, our primary goal was to develop a two-dimensional physical model of the PIN diode using the SILVACO finite element calculation software. This a-Si:H PIN diode two-dimensional physical model allowed us to study the problem of crosstalk between pixels in a matrix structure of detectors. In particular, we concentrated on the leakage current and the current generated in the volume between neighbouring pixels. The successful implementation of this model in SPICE ensures its usefulness in other professional simulators and especially its integration into a complete electronic structure (PIN diode, bias resistor, decoupling capacity and low noise amplifier). Thanks to these modelling tools, we were able to simulate PIN diode structures in a-Si:H with different thicknesses and different dimensions. These simulations have allowed us to predict that the thicker structures are relevant to the design of the pixel detectors for high energy physics. Applications in astronomy, medical imaging and the analysis of the failure of silicon integrated circuits, can

  10. Conception and modelling of photo-detection pixels. PIN photodiodes conceived in amorphous silicon for particles detection

    International Nuclear Information System (INIS)

    Negru, R.

    2008-06-01

    The research done has revealed that the a-Si:H is a material ideally suited for the detection of particles, while being resistant to radiation. It also has a low manufacturing cost, is compatible with existing technology and can be deposited over large areas. Thus, despite the low local mobility of charges (30 cm 2 /V/s), a-Si:H is a material of particular interest for manufacturing high-energy particle detection pixels. As a consequence of this, we have studied the feasibility of an experimental pixel stacked structure based on a-Si:H as a basic sensor element for an electromagnetic calorimeter. The structure of such a pixel consists of different components. First, a silicon PIN diode in a-Si:H is fabricated, followed by a bias resistor and a decoupling capacitor. Before such a structure is made and in order to optimize its design, it is essential to have an efficient behavioural model of the various components. Thus, our primary goal was to develop a two-dimensional physical model of the PIN diode using the SILVACO finite element calculation software. This a-Si:H PIN diode two-dimensional physical model allowed us to study the problem of crosstalk between pixels in a matrix structure of detectors. In particular, we concentrated on the leakage current and the current generated in the volume between neighbouring pixels. The successful implementation of this model in SPICE ensures its usefulness in other professional simulators and especially its integration into a complete electronic structure (PIN diode, bias resistor, decoupling capacity and low noise amplifier). Thanks to these modelling tools, we were able to simulate PIN diode structures in a-Si:H with different thicknesses and different dimensions. These simulations have allowed us to predict that the thicker structures are relevant to the design of the pixel detectors for high energy physics. Applications in astronomy, medical imaging and the analysis of the failure of silicon integrated circuits, can also

  11. Solution processed organic light-emitting diodes using the plasma cross-linking technology

    Energy Technology Data Exchange (ETDEWEB)

    He, Kongduo [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Liu, Yang [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China); Gong, Junyi; Zeng, Pan; Kong, Xun; Yang, Xilu; Yang, Cheng; Yu, Yan [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Liang, Rongqing [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China); Ou, Qiongrong, E-mail: qrou@fudan.edu.cn [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China)

    2016-09-30

    Highlights: • Mixed acetylene and Ar plasma treatment makes the organic film surface cross-linked. • The plasma treatment for 30 s does not affect the performance of OLEDs. • Cross-linking surface can resist rinsing and corrosion of organic solvent. • The surface morphology is nearly unchanged after plasma treatment. • The plasma cross-linking method can realize solution processed multilayer OLEDs. - Abstract: Solution processed multilayer organic light-emitting diodes (OLEDs) present challenges, especially regarding dissolution of the first layer during deposition of a second layer. In this work, we first demonstrated a plasma cross-linking technology to produce a solution processed OLED. The surfaces of organic films can be cross-linked after mixed acetylene and Ar plasma treatment for several tens of seconds and resist corrosion of organic solvent. The film thickness and surface morphology of emissive layers (EMLs) with plasma treatment and subsequently spin-rinsed with chlorobenzene are nearly unchanged. The solution processed triple-layer OLED is successfully fabricated and the current efficiency increases 50% than that of the double-layer OLED. Fluorescent characteristics of EMLs are also observed to investigate factors influencing the efficiency of the triple-layer OLED. Plasma cross-linking technology may open up a new pathway towards fabrication of all-solution processed multilayer OLEDs and other soft electronic devices.

  12. Technology of Wide Color Gamut Backlight with Light-Emitting Diode for Liquid Crystal Display Television

    Science.gov (United States)

    Kakinuma, Koichiro

    2006-05-01

    The development of light-emitting diode (LED) backlight a wide-color-gamut and mercury-free has become active in liquid crystal display (LCD) industry. Reports on the development of backlights, such as a direct illumination-type back-light and a guided light illumination-type LED backlight were published. The fabrication of an actual commercial product has been progressing under this active development. Sony Corporation launched an LED-backlit LCD television (TV) model, dubbed QUALIA 005, the world’s first home-use television featuring LED backlighting. This product offers a very wide color reproduction range, delivering a color gamut of 150% of that typically achieved by conventional televisions. In this paper, the background of the development of the LED backlight system “TriluminosTM” and the technologies used to realize the wide color gamut are discussed. The main issues to be solved for the commercialization were how to reduce the brightness/color non uniformity of the backlight and how to treat heat generation from the LED. The standardization of wide color space definition xvYCC and LED backlight LCD television combination is expected to result in a more vivid and correct color expression, and a forecast that extends to the market in the future.

  13. Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35 µm technology

    Energy Technology Data Exchange (ETDEWEB)

    Pellion, D.; Jradi, K.; Brochard, N. [Le2i – CNRS/Univ. de Bourgogne, Dijon (France); Prêle, D. [APC – CNRS/Univ. Paris Diderot, Paris (France); Ginhac, D. [Le2i – CNRS/Univ. de Bourgogne, Dijon (France)

    2015-07-01

    Some decades ago single photon detection used to be the terrain of photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several disadvantages such as low quantum efficiency, overall dimensions, and cost, making them unsuitable for compact design of integrated systems. So, the past decade has seen a dramatic increase in interest in new integrated single-photon detectors called Single-Photon Avalanche Diodes (SPAD) or Geiger-mode APD. SPAD are working in avalanche mode above the breakdown level. When an incident photon is captured, a very fast avalanche is triggered, generating an easily detectable current pulse. This paper discusses SPAD detectors fabricated in a standard CMOS technology featuring both single-photon sensitivity, and excellent timing resolution, while guaranteeing a high integration. In this work, we investigate the design of SPAD detectors using the AMS 0.35 µm CMOS Opto technology. Indeed, such standard CMOS technology allows producing large surface (few mm{sup 2}) of single photon sensitive detectors. Moreover, SPAD in CMOS technologies could be associated to electronic readout such as active quenching, digital to analog converter, memories and any specific processing required to build efficient calorimeters (Silicon PhotoMultiplier – SiPM) or high resolution imagers (SPAD imager). The present work investigates SPAD geometry. MOS transistor has been used instead of resistor to adjust the quenching resistance and find optimum value. From this first set of results, a detailed study of the dark count rate (DCR) has been conducted. Our results show a dark count rate increase with the size of the photodiodes and the temperature (at T=22.5 °C, the DCR of a 10 µm-photodiode is 2020 count s{sup −1} while it is 270 count s{sup −1} at T=−40 °C for a overvoltage of 800 mV). A small pixel size is desirable, because the DCR per unit area decreases with the pixel size. We also found that the adjustment

  14. Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

    International Nuclear Information System (INIS)

    Lagov, P B; Drenin, A S; Zinoviev, M A

    2017-01-01

    Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding. (paper)

  15. Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

    Science.gov (United States)

    Lagov, P. B.; Drenin, A. S.; Zinoviev, M. A.

    2017-05-01

    Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding.

  16. 0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    International Nuclear Information System (INIS)

    MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

    2004-01-01

    Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm 2 multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm 2 respectively at operating at temperatures of T radiator = 950 C and T diode = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and ∼0.85 W/cm 2 could be attained under the above operating temperatures

  17. Next generation DIRCM for 2.1-2.3 micron wavelength based on direct-diode GaSb technology

    Science.gov (United States)

    Dvinelis, Edgaras; Naujokaitė, Greta; Greibus, Mindaugas; Trinkūnas, Augustinas; Vizbaras, Kristijonas; Vizbaras, Augustinas

    2018-02-01

    Continuous advances in low-cost MANPAD heat-seeking missile technology over the past 50 years remains the number one hostile threat to airborne platforms globally responsible for over 60 % of casualties. Laser based directional countermeasure (DIRCM) technology have been deployed to counter the threat. Ideally, a laser based DIRCM system must involve a number of lasers emitting at different spectral bands mimicking the spectral signature of the airborne platform. Up to now, near and mid infrared spectral bands have been covered with semiconductor laser technology and only SWIR band remained with bulky fiber laser technology. Recent technology developments on direct-diode GaSb laser technology at Brolis Semiconductors offer a replacement for the fiber laser source leading to significant improvements by few orders of magnitude in weight, footprint, efficiency and cost. We demonstrate that with careful engineering, several multimode emitters can be combined to provide a directional laser beam with radiant intensity from 10 kW/sr to 60 kW/sr in an ultra-compact hermetic package with weight < 30 g and overall efficiency of 15 % in the 2.1- 2.3 micron spectral band offering 150 times improvement in efficiency and reduction in footprint. We will discuss present results, challenges and future developments for such next-generation integrated direct diode DIRCM modules for SWIR band.

  18. Internal fuel pin oxidizer

    International Nuclear Information System (INIS)

    Andrews, M.G.

    1978-01-01

    A nuclear fuel pin has positioned within it material which will decompose to release an oxidizing agent which will react with the cladding of the pin and form a protective oxide film on the internal surface of the cladding

  19. Radiation detectors of PIN type for X-rays

    International Nuclear Information System (INIS)

    Ramirez-Jimenez, F.J.

    2003-01-01

    In this laboratory session, tree experiments are proposed: the measurement of X-ray energy spectra from radioactive sources with a high resolution cooled Si-Li detector, with a room temperature PIN diode and the measurement of the response of a PIN diode to the intensity of X-rays of radio-diagnostic units. The spectra obtained with the Si-Li detector help to understand the energy distribution of X-rays and are used as a reference to compare the results obtained with the PIN diode. Measurements in medical X-ray machines are proposed. Low cost, simple electronic instruments and systems are used as tools to make measurements in X-ray units used in radio-diagnostic

  20. Post irradiation examination on test fuel pins for PWR

    International Nuclear Information System (INIS)

    Fogaca Filho, N.; Ambrozio Filho, F.

    1981-01-01

    Certain aspects of irradiation technology on test fuel pins for PWR, are studied. The results of post irradiation tests, performed on test fuel pins in hot cells, are presented. The results of the tests permit an evaluation of the effects of irradiation on the fuel and cladding of the pin. (Author) [pt

  1. Critical current densities amd pinning mechanisms of high-Tc films on single crystalline and technologically relevant substrates. Final report

    International Nuclear Information System (INIS)

    Adrian, H.

    1995-12-01

    The report deals with six project tasks: (1) Effects of impurity additions at atomic level on the pinning behaviour and the critical current densities, examined in epitactic YBA 2 (Cu 1-x Ni x ) 3 O 7 films. It could be proven that the Ni atoms increase the activation energy for flux movement and the critical current density in a concentration range of 0 2 Sr 2 Ca n-1 Cu n O 2n+4+δ films (n = 2 and 3) with good crystalline properties, high critical currents, and high current densities were prepared. Thin YBa 2 Cu 3 O 7 films of high quality could be grown on saphire substrates, both by the MO-CVD process and by MBE. The aim of depositing biaxially textured YBa 2 Cu 3 O 7 films with high critical current densities on polycrystalline, metallic substrates was achieved by the IBAD process combined with MBE. The buffer layer was YSZ. Heterostructures of the layer sequence YBa 2 Cu 3 O 7 /CeO 2 /Y 0.3 Pr 0.7 Ba 2 Cu 3 O 7 /YBa 2 Cu 3 O 7 and YBa 2 Cu 3 O 7 /CeO 2 /Au were prepared by laser ablation and sputtering processes, in order to examine Josephson ramp contacts and superconducting field-effect transistors. (orig./MM) [de

  2. Novel recycle technology for recovering rare metals (Ga, In) from waste light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhan, Lu; Xia, Fafa; Ye, Qiuyu; Xiang, Xishu; Xie, Bing, E-mail: bxie@des.ecnu.edu.cn

    2015-12-15

    Highlights: • Rare metals (Ga, In) are separated and recycled from waste light-emitting diodes. • Pyrolysis, physical disaggregation and vacuum metallurgy separation are proposed. • There is no hazardous materials produced in this process. - Abstract: This work develops a novel process of recycling rare metals (Ga, In) from waste light-emitting diodes using the combination of pyrolysis, physical disaggregation methods and vacuum metallurgy separation. Firstly, the pure chips containing InGaN/GaN are adopted to study the vacuum separation behavior of rare metals, which aims to provide the theoretical foundation for recycling gallium and indium from waste light-emitting diodes. In order to extract the rare-metal-rich particles from waste light-emitting diodes, pyrolysis and physical disaggregation methods (crushing, screening, grinding and secondly screening) are studied respectively, and the operating parameters are optimized. With low boiling points and high saturation vapor pressures under vacuum, gallium and indium are separated from rare-metal-rich particles by the process of evaporation and condensation. By reference to the separating parameters of pure chips, gallium and indium in waste light-emitting diodes are recycled with the recovery efficiencies of 93.48% and 95.67% under the conditions as follows: heating temperature of 1373 K, vacuum pressure of 0.01–0.1 Pa, and holding time of 60 min. There are no secondary hazardous materials generated in the whole processes. This work provides an efficient and environmentally friendly process for recycling rare metals from waste light-emitting diodes.

  3. Spin-photon entangling diode

    DEFF Research Database (Denmark)

    Flindt, Christian; Sørensen, A. S.; Lukin, M. D.

    2007-01-01

    We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

  4. An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.

    2017-01-01

    In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can...

  5. MICROCONTROLLER PIN CONFIGURATION TOOL

    OpenAIRE

    Bhaskar Joshi; F. Mohammed Rizwan; Dr. Rajashree Shettar

    2012-01-01

    Configuring the micro controller with large number of pins is tedious. Latest Infine on microcontroller contains more than 200 pins and each pin has classes of signals. Therefore the complexity of the microcontroller is growing. It evolves looking into thousands of pages of user manual. For a user it will take days to configure the microcontroller with the peripherals. We need an automated tool to configure the microcontroller so that the user can configure the microcontroller without having ...

  6. Injection seeded, diode pumped regenerative ring Nd:YAG amplifier for spaceborne laser ranging technology development

    Science.gov (United States)

    Coyle, D. Barry; Kay, Richard B.; Degnan, John J.; Krebs, Danny J.; Seery, Bernard D.

    1992-01-01

    A small, all solid state, regenerative ring amplifier designed as a prototype for space application is discussed. Novel features include dual side pumping of the Nd:YAG crystal and a triangular ring cavity design which minimizes the number of optical components and losses. The amplifier is relatively small (3 ns round trip time) even though standard optical elements are employed. The ring regeneratively amplifies a 100 ps single pulse by approximately 10(exp 5) at a repetition rate of 10 to 100 Hz. The amplifier is designed to be injection seeded with a pulsed, 100 ps laser diode at 1.06 microns, but another Nd:YAG laser system supplying higher pulse energies was employed for laboratory experiment. This system is a prototype laser oscillator for the Geoscience Laser Ranging System (GLRS) platform. Results on measurements of beam quality, astigmatism, and gain are given.

  7. Panoramic irradiator dose mapping with pin photodiodes

    International Nuclear Information System (INIS)

    Ferreira, Danilo Cardenuto; Napolitano, Celia Marina; Bueno, Carmen Cecilia

    2011-01-01

    In this work we study the possibility of using commercial silicon PIN photodiodes (Siemens, SFH 00206) for dose mapping in the Panoramic Irradiator facility at IPEN-CNEN/SP. The chosen photodiode, that is encased in 1.2 mm thickness polymer layer, displays promising dosimetric characteristics such as small size (sensitive area of 7.00 mm 2 ), high sensitivity and low dark current (≅ 300 pA, at 0 V) together with low-cost and wide availability. The Panoramic facility is an irradiator Type II with absorbed dose certificated by International Dose Assurance Service (IDAS) offered by the International Agency Energy Atomic (IAEA). The charge registered by the diode as a function of the absorbed dose was in excellent agreement with that one calibrated by IDAS. Besides this, the easy handling and fast response of the SFH00206 diode compared to Fricke chemical dosimeters encouraged us to perform dose mapping around the source. (author)

  8. Fuel pin transfer tool

    International Nuclear Information System (INIS)

    Patenaude, R. S.

    1985-01-01

    A fuel pin transfer tool has a latching device of the collet type attached to a first member movable vertically through a long work stroke enabling a fuel pin in an under water assembly to be engaged and withdrawn therefrom or placed therein and released. The latching device has a collet provided with a plurality of resilient fingers having cam portions normally spaced apart to receive the upper end of a fuel pin between them and a second member, movable vertically through a short stroke relative to the first member is provided with cam portions engageable with those of the fingers and is yieldably and resiliently held in a raised position in which its cam portions engage those of the fingers and force the fingers into their pin-gripping positions. When a predetermined force is applied to the second member, it is so moved that its cam portions are disengaged from the cam portions of the fingers permitting the latter to move into their normal relationship in which a gripped pin is released or another pin received but with their pin-gripping relationship positively re-established and maintained once the force on the tubular member is lessened. Movement of the first member in either direction and movement of the second member into its raised position is attended by forces inadequate to affect the integrity of fuel pin cladding. That force is applied in the preferred embodiment, by a power operated actuator which is within the upper portion of a housing and, in the preferred embodiment, carried by the long stroke member but always in the upper housing portion which is of a material sufficiently translucent to enable the actuator to be observed throughout the work stroke and is sufficiently light in weight to prevent the tool from being top heavy

  9. Flux Pinning in Superconductors

    CERN Document Server

    Matsushita, Teruo

    2007-01-01

    The book covers the flux pinning mechanisms and properties and the electromagnetic phenomena caused by the flux pinning common for metallic, high-Tc and MgB2 superconductors. The condensation energy interaction known for normal precipitates or grain boundaries and the kinetic energy interaction proposed for artificial Nb pins in Nb-Ti, etc., are introduced for the pinning mechanism. Summation theories to derive the critical current density are discussed in detail. Irreversible magnetization and AC loss caused by the flux pinning are also discussed. The loss originally stems from the ohmic dissipation of normal electrons in the normal core driven by the electric field induced by the flux motion. The readers will learn why the resultant loss is of hysteresis type in spite of such mechanism. The influence of the flux pinning on the vortex phase diagram in high Tc superconductors is discussed, and the dependencies of the irreversibility field are also described on other quantities such as anisotropy of supercondu...

  10. Universal tunneling behavior in technologically relevant P/N junction diodes

    International Nuclear Information System (INIS)

    Solomon, Paul M.; Jopling, Jason; Frank, David J.; D'Emic, Chris; Dokumaci, O.; Ronsheim, P.; Haensch, W.E.

    2004-01-01

    Band-to-band tunneling was studied in ion-implanted P/N junction diodes with profiles representative of present and future silicon complementary metal-oxide-silicon (CMOS) field effect transistors. Measurements were done over a wide range of temperatures and implant parameters. Profile parameters were derived from analysis of capacitance versus voltage characteristics, and compared to secondary-ion mass spectroscopy analysis. When the tunneling current was plotted against the effective tunneling distance (tunneling distance corrected for band curvature) a quasi-universal exponential reduction of tunneling current versus, tunneling distance was found with an attenuation length of 0.38 nm, corresponding to a tunneling effective mass of 0.29 times the free electron mass (m 0 ), and an extrapolated tunneling current at zero tunnel distance of 5.3x10 7 A/cm 2 at 300 K. These results are directly applicable for predicting drain to substrate currents in CMOS transistors on bulk silicon, and body currents in CMOS transistors in silicon-on-insulator

  11. PINS-3X Operations

    Energy Technology Data Exchange (ETDEWEB)

    E.H. Seabury

    2013-09-01

    Idaho National Laboratory’s (INL’s) Portable Isotopic Neutron Spectroscopy System (PINS) non-intrusively identifies the chemical fill of munitions and sealed containers. The PINS-3X variant of the system is used to identify explosives and uses a deuterium-tritium (DT) electronic neutron generator (ENG) as the neutron source. Use of the system, including possession and use of the neutron generator and shipment of the system components requires compliance with a number of regulations. This report outlines some of these requirements as well as some of the requirements in using the system outside of INL.

  12. High power vertical stacked and horizontal arrayed diode laser bar development based on insulation micro-channel cooling (IMCC) and hard solder bonding technology

    Science.gov (United States)

    Wang, Boxue; Jia, Yangtao; Zhang, Haoyu; Jia, Shiyin; Liu, Jindou; Wang, Weifeng; Liu, Xingsheng

    2018-02-01

    An insulation micro-channel cooling (IMCC) has been developed for packaging high power bar-based vertical stack and horizontal array diode lasers, which eliminates many issues caused in its congener packaged by commercial copper formed micro-channel cooler(MCC), such as coefficient of thermal expansion (CTE) mismatch between cooler and diode laser bar, high coolant quality requirement (DI water) and channel corrosion and electro-corrosion induced by DI water if the DI-water quality is not well maintained The IMCC cooler separates water flow route and electrical route, which allows tap-water as coolant without electro-corrosion and therefore prolongs cooler lifetime dramatically and escalated the reliability of these diode lasers. The thickness of ceramic and copper in an IMCC cooler is well designed to minimize the CTE mismatch between laser bar and cooler, consequently, a very low "SMILE" of the laser bar can be achieved for small fast axis divergence after collimation. In additional, gold-tin hard solder bonding technology was also developed to minimize the risk of solder electromigration at high current density and thermal fatigue under hard-pulse operation mode. Testing results of IMCC packaged diode lasers are presented in this report.

  13. Pinning Down versus Density

    OpenAIRE

    Juhász, István; Soukup, Lajos; Szentmiklóssy, Zoltán

    2015-01-01

    The pinning down number $ {pd}(X)$ of a topological space $X$ is the smallest cardinal $\\kappa$ such that for any neighborhood assignment $U:X\\to \\tau_X$ there is a set $A\\in [X]^\\kappa$ with $A\\cap U(x)\

  14. Pin clad strains in Phenix

    International Nuclear Information System (INIS)

    Languille, A.

    1979-07-01

    The Phenix reactor has operated for 4 years in a satisfactory manner. The first 2 sub-assembly loadings contained pins clad in solution treated 316. The principal pin strains are: diametral strain (swelling and irradiation creep), ovality and spiral bending of the pin (interaction of wire and pin cluster and wrapper). A pin cluster irradiated to a dose of 80 dpa F reached a pin diameter strain of 5%. This strain is principally due to swelling (low fission gas pressure). The principal parameters governing the swelling are instantaneous dose, time and temperature for a given type of pin cladding. Other types of steel are or will be irradiated in Phenix. In particular, cold-worked titanium stabilised 316 steel should contribute towards a reduction in the pin clad strains and increase the target burn-up in this reactor. (author)

  15. Nano-engineered pinning centres in YBCO superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Crisan, A., E-mail: adrian.crisan@infim.ro [National Institute for Materials Physics Bucharest, 105 bis Atomistilor Str., 077125 Magurele (Romania); School of Metallurgy and Materials, University of Birmingham, Edgbaston, B15 2TT Birmingham (United Kingdom); Dang, V.S. [School of Metallurgy and Materials, University of Birmingham, Edgbaston, B15 2TT Birmingham (United Kingdom); Nano and Energy Center, VNU Hanoi University of Science, 334 Nguyen Trai, Thanh Xuan, Hanoi (Viet Nam); Mikheenko, P. [School of Metallurgy and Materials, University of Birmingham, Edgbaston, B15 2TT Birmingham (United Kingdom); Department of Physics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway)

    2017-02-15

    Highlights: • Power applications of YBCO films/coated conductors in technological relevant magnetic fields requires nano-engineered pinning centre. • Three approaches have been proposed: substrate decoration, quasi-multilayers, and targets with secondary phase nano-inclusions. • Combination of all three approaches greatly increased critical current in YBCO films. • Bulk pinning force, pinning potential, and critical current density are estimated and discussed in relation with the type and strength of pinning centres related to the defects evidenced by Transmission Electron Microscopy. - Abstract: For practical applications of superconducting materials in applied magnetic fields, artificial pinning centres in addition to natural ones are required to oppose the Lorentz force. These pinning centres are actually various types of defects in the superconductor matrix. The pinning centres can be categorised on their dimension (volume, surface or point) and on their character (normal cores or Δκ cores). Different samples have been produced by Pulsed Laser Deposition, with various thicknesses, temperatures and nanostructured additions to the superconducting matrix. They have been characterized by SQUID Magnetic Properties Measurement System and Physical Properties Measurement System, as well as by Transmission Electron Microscopy (TEM). Correlations between pinning architecture, TEM images, and critical currents at various fields and field orientations will be shown for a large number of YBa{sub 2}Cu{sub 3}O{sub x} films with various types and architectures of artificial pinning centres.

  16. Serviceability of rod ceramic fuel pins on motoring conditions of FTP or NEMF reactor

    International Nuclear Information System (INIS)

    Deryavko, I.I.

    2004-01-01

    The operation conditions of rod ceramic fuel pins in the running hydrogen-cooled technological canals of FTP or NEMF reactor on the motoring conditions are considered. The available postreactor researches of the fuel pins are presented and the additional postreactor researches of fuel pins, tested on this mode in IVG.1 and IRGIT reactors, are carried out. The fuel pins serviceability on motoring conditions of FTP or NEF reactor operation is concluded. (author)

  17. Close Proximity Robotic Maneuvering through Flux Pinning Manipulation

    Data.gov (United States)

    National Aeronautics and Space Administration — Non-contacting actuation technology like flux pinning has never been demonstrated in space. The development of a nonphysical joint is critical for maneuvers such as...

  18. Nuclear fuel pin

    International Nuclear Information System (INIS)

    Hartley, Kenneth; Moulding, T.L.J.; Rostron, Norman.

    1979-01-01

    Fuel pin for use in fast breeder nuclear reactors containing fissile and fertile areas of which the fissile and fertile materials do not mix. The fissile material takes the shape of large and small diameter microspheres (the small diameter microspheres can pass through the interstices between the large microspheres). The barrier layers being composed of microspheres with a diameter situated between those of the large and small microspheres ensure that the materials do not mix [fr

  19. Pinning in nonmagnetic borocarbides

    International Nuclear Information System (INIS)

    Zholobenko, A.N.; Mikitik, G.P.; Fil, V.D.; Kim, J.D.; Lee, S.I.

    2005-01-01

    The field dependences of the Labush parameter in nonmagnetic borocarbides are measured by the method which does not require the free flux flow regime. The anticipated critical current densities are estimated. These values are by two orders of magnitude higher than those measured 'directly' in transport (magnetic) experiments. The giant peak-effect in the field dependences of the Labush parameter is revealed in the Y-based borocarbides. Its behavior is well approximated by the collective pinning theory

  20. Analysis of Light Emitting Diode Technology for Aerospace Suitability in Human Space Flight Applications

    Science.gov (United States)

    Treichel, Todd H.

    Commercial space designers are required to manage space flight designs in accordance with parts selections made from qualified parts listings approved by Department of Defense and NASA agencies for reliability and safety. The research problem was a government and private aerospace industry problem involving how LEDs cannot replace existing fluorescent lighting in manned space flight vehicles until such technology meets DOD and NASA requirements for reliability and safety, and effects on astronaut cognition and health. The purpose of this quantitative experimental study was to determine to what extent commercial LEDs can suitably meet NASA requirements for manufacturer reliability, color reliability, robustness to environmental test requirements, and degradation effects from operational power, while providing comfortable ambient light free of eyestrain to astronauts in lieu of current fluorescent lighting. A fractional factorial experiment tested white and blue LEDs for NASA required space flight environmental stress testing and applied operating current. The second phase of the study used a randomized block design, to test human factor effects of LEDs and a qualified ISS fluorescent for retinal fatigue and eye strain. Eighteen human subjects were recruited from university student members of the American Institute of Aeronautics and Astronautics. Findings for Phase 1 testing showed that commercial LEDs met all DOD and NASA requirements for manufacturer reliability, color reliability, robustness to environmental requirements, and degradation effects from operational power. Findings showed statistical significance for LED color and operational power variables but degraded light output levels did not fall below the industry recognized <70%. Findings from Phase 2 human factors testing showed no statistically significant evidence that the NASA approved ISS fluorescent lights or blue or white LEDs caused fatigue, eye strain and/or headache, when study participants perform

  1. Performance of a high-resolution CsI(Tl)-PIN readout detector

    International Nuclear Information System (INIS)

    Kudenko, Yu.G.; Imazato, J.

    1992-10-01

    A study of a large-volume CsI(Tl) detector with a PIN diode readout was carried out. Our results show a light output of ≤20000 photoelectrons/MeV, an equivalent noise charge (rms) of about 900 electrons, and an equivalent noise level of ≤ 60 keV. We obtained an energy resolution of 11.2% (fwhm) for 1275 keV gamma rays from a 22 Na source. The characteristics of the PIN - preamplifier system as well as the parameters of a small CsI(Tl) - PIN detector with a direct and wavelength shifter readout are also reported. (author)

  2. Transformation of Helicopter PinS Procedures for Airplanes

    Directory of Open Access Journals (Sweden)

    Jakub Kraus

    2013-09-01

    Full Text Available This article deals with the possibility to use existing helicopter Point in Space procedures with minor changes for airplanes. The basis is to find parts of PinS procedures that need to be changed, suggest these changes, and then determine whether the revised procedures could be usable and could bring the benefits for airplane operations.

  3. Retractable Pin Tools for the Friction Stir Welding Process

    Science.gov (United States)

    1998-01-01

    Two companies have successfully commercialized a specialized welding tool developed at the Marshall Space Flight Center (MSFC). Friction stir welding uses the high rotational speed of a tool and the resulting frictional heat created from contact to crush, 'stir' together, and forge a bond between two metal alloys. It has had a major drawback, reliance on a single-piece pin tool. The pin is slowly plunged into the joint between two materials to be welded and rotated as high speed. At the end of the weld, the single-piece pin tool is retracted and leaves a 'keyhole,' something which is unacceptable when welding cylindrical objects such as drums, pipes and storage tanks. Another drawback is the requirement for different-length pin tools when welding materials of varying thickness. An engineer at the MSFC helped design an automatic retractable pin tool that uses a computer-controlled motor to automatically retract the pin into the shoulder of the tool at the end of the weld, preventing keyholes. This design allows the pin angle and length to be adjusted for changes in material thickness and results in a smooth hole closure at the end of the weld. Benefits of friction stir welding, using the MSFC retractable pin tool technology, include the following: The ability to weld a wide range of alloys, including previously unweldable and composite materials; provision of twice the fatigue resistance of fusion welds and no keyholes; minimization of material distortion; no creation of hazards such as welding fumes, radiation, high voltage, liquid metals, or arcing; automatic retraction of the pin at the end of the weld; and maintaining full penetration of the pin.

  4. Pinning, de-pinning and re-pinning of a slowly varying rivulet

    KAUST Repository

    Paterson, C.; Wilson, S.K.; Duffy, B.R.

    2013-01-01

    The solutions for the unidirectional flow of a thin rivulet with prescribed volume flux down an inclined planar substrate are used to describe the locally unidirectional flow of a rivulet with constant width (i.e. pinned contact lines) but slowly varying contact angle as well as the possible pinning and subsequent de-pinning of a rivulet with constant contact angle and the possible de-pinning and subsequent re-pinning of a rivulet with constant width as they flow in the azimuthal direction from the top to the bottom of a large horizontal cylinder. Despite being the same locally, the global behaviour of a rivulet with constant width can be very different from that of a rivulet with constant contact angle. In particular, while a rivulet with constant non-zero contact angle can always run from the top to the bottom of the cylinder, the behaviour of a rivulet with constant width depends on the value of the width. Specifically, while a narrow rivulet can run all the way from the top to the bottom of the cylinder, a wide rivulet can run from the top of the cylinder only to a critical azimuthal angle. The scenario in which the hitherto pinned contact lines of the rivulet de-pin at the critical azimuthal angle and the rivulet runs from the critical azimuthal angle to the bottom of the cylinder with zero contact angle but slowly varying width is discussed. The pinning and de-pinning of a rivulet with constant contact angle, and the corresponding situation involving the de-pinning and re-pinning of a rivulet with constant width at a non-zero contact angle which generalises the de-pinning at zero contact angle discussed earlier, are described. In the latter situation, the mass of fluid on the cylinder is found to be a monotonically increasing function of the constant width. © 2013 Elsevier Masson SAS. All rights reserved.

  5. Pinning, de-pinning and re-pinning of a slowly varying rivulet

    KAUST Repository

    Paterson, C.

    2013-09-01

    The solutions for the unidirectional flow of a thin rivulet with prescribed volume flux down an inclined planar substrate are used to describe the locally unidirectional flow of a rivulet with constant width (i.e. pinned contact lines) but slowly varying contact angle as well as the possible pinning and subsequent de-pinning of a rivulet with constant contact angle and the possible de-pinning and subsequent re-pinning of a rivulet with constant width as they flow in the azimuthal direction from the top to the bottom of a large horizontal cylinder. Despite being the same locally, the global behaviour of a rivulet with constant width can be very different from that of a rivulet with constant contact angle. In particular, while a rivulet with constant non-zero contact angle can always run from the top to the bottom of the cylinder, the behaviour of a rivulet with constant width depends on the value of the width. Specifically, while a narrow rivulet can run all the way from the top to the bottom of the cylinder, a wide rivulet can run from the top of the cylinder only to a critical azimuthal angle. The scenario in which the hitherto pinned contact lines of the rivulet de-pin at the critical azimuthal angle and the rivulet runs from the critical azimuthal angle to the bottom of the cylinder with zero contact angle but slowly varying width is discussed. The pinning and de-pinning of a rivulet with constant contact angle, and the corresponding situation involving the de-pinning and re-pinning of a rivulet with constant width at a non-zero contact angle which generalises the de-pinning at zero contact angle discussed earlier, are described. In the latter situation, the mass of fluid on the cylinder is found to be a monotonically increasing function of the constant width. © 2013 Elsevier Masson SAS. All rights reserved.

  6. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    Directory of Open Access Journals (Sweden)

    Sandro Rao

    2016-01-01

    Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

  7. Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields

    Czech Academy of Sciences Publication Activity Database

    Wauters, F.; Kraeva, I.S.; Tandecki, M.; Traykov, E.; Van Gorp, S.; Zákoucký, Dalibor; Severijns, N.

    2009-01-01

    Roč. 604, č. 3 (2009), s. 563-567 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10480505 Keywords : PIN-diode * beta-particle detection * Magnetic field Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.317, year: 2009

  8. A Codesigned Compact Dual-Band Filtering Antenna with PIN Loaded for WLAN Applications

    Directory of Open Access Journals (Sweden)

    Shanxiong Chen

    2014-01-01

    Full Text Available A codesigned compact dual-band filtering antenna incorporating a PIN diode for 2.45/5.2 GHz wireless local area network (WLAN applications is proposed in this paper. The integrated filtering antenna system consists of a simple monopole radiator, a microstrip dual-band band-pass filter, and a PIN diode. The performance of the filtering antenna is notably promoted by optimizing the impedance between the antenna and the band-pass filter, with good selectivity and out-of-band rejection. The design process follows the approach of the synthesis of band-pass filter. In addition, the PIN diode is incorporated in the filtering antenna for further size reduction, which also widens the coverage of the bandwidth by about 230% for 2.4 GHz WLAN. With the presence of small size and good filtering performances, the proposed filtering antenna is a good candidate for the wireless communication systems. Prototypes of the proposed filtering antenna incorporating a PIN diode are fabricated and measured. The measured results including return losses and radiation patterns are presented.

  9. Vortex pinning and creep experiments

    International Nuclear Information System (INIS)

    Kes, P.H.

    1991-01-01

    A brief review of basic flux-pinning and flux-creep ingredients and a selection of experimental results on high-temperature-superconductivity compounds is presented. Emphasis is put on recent results and on those properties which are central to the emerging understanding of the flux-pinning and flux-creep mechanisms of these fascinating materials

  10. Study of the Radiation-Hardness of VCSEL and PIN

    CERN Document Server

    Gan, K K; Fernando, W; Kagan, H P; Kass, R D; Lebbai, M R M; Merritt, H; Moore, J R; Nagarkar, A; Rizatdinova, F; Skubic, P L; Smith, D S; Strang, M

    2009-01-01

    The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We study the radiation-hardness of VCSELs (Vertical-Cavity Surface-Emitting Laser) and GaAs and silicon PINs using 24 GeV/c protons at CERN for possible application in the data transmission upgrade. The optical power of VCSEL arrays decreases significantly after the irradiation but can be partially annealed with high drive currents. The responsivities of the PIN diodes also decrease significantly after irradiation, but can be recovered by operating at higher bias voltage. This provides a simple mechanism to recover from the radiation damage.

  11. Automated fuel pin loading system

    Science.gov (United States)

    Christiansen, D.W.; Brown, W.F.; Steffen, J.M.

    An automated loading system for nuclear reactor fuel elements utilizes a gravity feed conveyor which permits individual fuel pins to roll along a constrained path perpendicular to their respective lengths. The individual lengths of fuel cladding are directed onto movable transports, where they are aligned coaxially with the axes of associated handling equipment at appropriate production stations. Each fuel pin can be be reciprocated axially and/or rotated about its axis as required during handling steps. The fuel pins are inerted as a batch prior to welding of end caps by one of two disclosed welding systems.

  12. Very high resolution detection of gamma radiation at room-temperature using P-I-N detectors of CdZnTe and HgCdTe

    Science.gov (United States)

    Hamilton, W. J.; Rhiger, D. R.; Sen, S.; Kalisher, M. H.; James, K.; Reid, C. P.; Gerrish, V.; Baccash, C. O.

    1994-08-01

    High-energy photon detectors have been constructed by engineering and fabricating p-i-n diode structures consisting of bulk CdZnTe and epitaxial HgCdTe. The p-i-n structure was obtained by liquid-phase epitaxial growth of p and n doped HgCdTe layers on 'intrinsic' CdZnTe material about 1mm thick and approximately 25mm square. Curve tracing shows I-V curves with diode characteristics having resistivity above 1011 Omega -cm and leakage current of less than 400 pA to about - 60V reverse bias on a typical test piece approximately 5 x 8 x 1 mm. Spectra of similar test pieces have been obtained at room temperature with various nuclear isotopic sources over the range of 22 keV to 662 keV which show exceptionally high energy resolution. Resolution as good as 1.82% FWHM was obtained for the 356 keV line of 133Ba with a P/V = 3.4. The performance of these detectors combined with contemporary infrared technology capable of fabricating 2D arrays of these II-VI materials opens up manifold exciting applications in astrophysics, medical, industrial, environmental, and defense spectroscopy and imaging.

  13. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

    Science.gov (United States)

    Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

    2006-05-18

    Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

  14. Pinning down the axion

    International Nuclear Information System (INIS)

    Dabholkar, A.; Quashnock, J.M.

    1990-01-01

    Davis has argued that, without inflation, the decay of axionic strings is the primary source of axions. This implies a cosmological lower bound on the axion mass of 10 -5 to 10 -3 eV. In order to obtain a sharper bound it is essential to know the spectrum of emitted axions and the detailed motion of a global string strongly coupled to the axionic field. To this end, we obtain self-consistent, renormalized equations that describe the dynamics of a radiating global string interacting with its surrounding axionic field. We describe the numerical formalism for evolving string trajectories using these equations. From the numerical and analytical evidence we argue that, with appropriate renormalization, the motion of an interacting cosmic string loop can be well approximated by the motion of a free Nambu-Goto string. This implies a lower bound for the axion mass of 10 -3 eV. Together with the recent upper bound of 4x10 -4 eV from the supernova SN1987a, this marginally rules out the invisible axion, or at least pins down the axion mass to a very narrow window around 10 -3 eV. This still leaves open the window around 2 eV for hardronic axions, but in that case the axion is no longer a serious dark matter candidate. (orig.)

  15. Diode laser based light sources for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin

    2013-01-01

    Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode...... imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications....

  16. Pinning Mechanisms in YBCO Tapes

    CERN Document Server

    Spera, Marcello; Ballarino, Amalia

    2015-01-01

    In this thesis work, a study on flux pinning mechanisms of commercial YBCO tapes is presented. This study has been performed via critical current characterization using transport (via direct I-V curves) and magnetization (via a Vibrating Sample Magnetometer) measurements. The latter ones turned out to be better concerning the comprehension of the pinning landscape of the provided samples, as a wider range of magnetic fields and temperatures is available for those measurements in the setup I used. The comparison of the experimental data with existing theoretical models allowed me to draw a picture of the pinning mechanisms underlying in each sample, and they turned out to be quite different one another. Moreover, for high-performance research tapes, another interesting feature has been found: the counterplay between the self-field critical current and the in-field one. Very well engineered artificial pinning structures limit the self-field critical current density due to the hi...

  17. Analytic formalism for current crowding in light emitting diodes

    International Nuclear Information System (INIS)

    Lee, Kyu-Seok

    2012-01-01

    This paper presents an analytic approach to simulating current crowding (CC) in light-emitting diodes with parallel p- and n-contacts. The electrical potential difference across the p-i-n layers is derived from the Laplace equation, whereas the current density through the p-i-n layers is obtained from the current density - voltage relation of a single-diode model. Since these two properties influence each other, they are calculated iteratively. It is found that CC depends on the applied voltage (or the average current density), the sheet resistances of the p- and the n-contact layers, the width of the active region, and the specific series resistance and ideality factor of the p-i-n layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Automated system for loading nuclear fuel pins

    International Nuclear Information System (INIS)

    Marshall, J.L.

    1983-10-01

    A completely automatic and remotely controlled fuel pin fabrication system is being designed by the Westinghouse Hanford Company. The Pin Operations System will produce fuel pins for the Fast Flux Test Facility (FFTF) and the Clinch River Breeder Reactor Plant (CRBRP). The system will assemble fuel pin components into cladding tubes in a controlled environment. After fuel loading, the pins are filled with helium, the tag gas capsules are inserted, and the top end cap welded. Following welding, the pins are surveyed to assure they are free of contamination and then the pins are helium leak tested

  19. Continuous Holdup Measurements with Silicon P-I-N Photodiodes

    International Nuclear Information System (INIS)

    Bell, Z.W.; Oberer, R.B.; Williams, J.A.; Smith, D.E.; Paulus, M.J.

    2002-01-01

    We report on the behavior of silicon P-I-N photodiodes used to perform holdup measurements on plumbing. These detectors differ from traditional scintillation detectors in that no high-voltage is required, no scintillator is used (gamma and X rays are converted directly by the diode), and they are considerably more compact. Although the small size of the diodes means they are not nearly as efficient as scintillation detectors, the diodes' size does mean that a detector module, including one or more diodes, pulse shaping electronics, analog-to-digital converter, embedded microprocessor, and digital interface can be realized in a package (excluding shielding) the size of a pocket calculator. This small size, coupled with only low-voltage power requirement, completely solid-state realization, and internal control functions allows these detectors to be strategically deployed on a permanent basis, thereby reducing or eliminating the need for manual holdup measurements. In this paper, we report on the measurement of gamma and X rays from 235 U and 238 U contained in steel pipe. We describe the features of the spectra, the electronics of the device and show how a network of them may be used to improve estimates of inventory in holdup

  20. Spin-Wave Diode

    Directory of Open Access Journals (Sweden)

    Jin Lan (兰金

    2015-12-01

    Full Text Available A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound states in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. Our findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.

  1. Electronic technology

    International Nuclear Information System (INIS)

    Kim, Jin Su

    2010-07-01

    This book is composed of five chapters, which introduces electronic technology about understanding of electronic, electronic component, radio, electronic application, communication technology, semiconductor on its basic, free electron and hole, intrinsic semiconductor and semiconductor element, Diode such as PN junction diode, characteristic of junction diode, rectifier circuit and smoothing circuit, transistor on structure of transistor, characteristic of transistor and common emitter circuit, electronic application about electronic equipment, communication technology and education, robot technology and high electronic technology.

  2. Enhanced pinning in superconducting thin films with graded pinning landscapes

    Science.gov (United States)

    Motta, M.; Colauto, F.; Ortiz, W. A.; Fritzsche, J.; Cuppens, J.; Gillijns, W.; Moshchalkov, V. V.; Johansen, T. H.; Sanchez, A.; Silhanek, A. V.

    2013-05-01

    A graded distribution of antidots in superconducting a-Mo79Ge21 thin films has been investigated by magnetization and magneto-optical imaging measurements. The pinning landscape has maximum density at the sample border, decreasing linearly towards the center. Its overall performance is noticeably superior than that for a sample with uniformly distributed antidots: For high temperatures and low fields, the critical current is enhanced, whereas the region of thermomagnetic instabilities in the field-temperature diagram is significantly suppressed. These findings confirm the relevance of graded landscapes on the enhancement of pinning efficiency, as recently predicted by Misko and Nori [Phys. Rev. B 85, 184506 (2012)].

  3. Research on Pin Tumbler Locks and the Characteristics of Surface Traces Formed by Unlocking Guns

    Science.gov (United States)

    Yi, Gao; Yifeng, Jin; Yanping, Bai; Hongcheng, Mei; Zhen, Xu

    2018-02-01

    In this paper, taking the structure of the pin tumbler locks and the principle of opening and closing locks as breakthrough point, we have studied the machining traces of pin tumbler components and trace characters of pin surface during normal operating. At the same time, taking the unlocking gun as an example, the paper analyzes the unlocking technology and the formation of traces, and summarizes the changing rules of the surface traces of elastic bead locks by comparing the positions and the characteristics of the traces, which provides technical support for the future study of traces of pin tumbler locks.

  4. Design of 340 GHz 2× and 4× Sub-Harmonic Mixers Using Schottky Barrier Diodes in Silicon-Based Technology

    Directory of Open Access Journals (Sweden)

    Chao Liu

    2015-05-01

    Full Text Available This paper presents the design of terahertz 2× and 4× sub-harmonic down-mixers using Schottky Barrier Diodes fabricated in standard 0.13 μm SiGe BiCMOS technology. The 340 GHz sub-harmonic mixers (SHMs are designed based on anti-parallel-diode-pairs (APDPs. With the 2nd and 4th harmonic, local oscillator (LO frequencies of 170 GHz and 85 GHz are used to pump the two 340 GHz SHMs. With LO power of 7 dBm, the 2× SHM exhibits a conversion loss of 34.5–37 dB in the lower band (320–340 GHz and 35.5–41 dB in the upper band (340–360 GHz; with LO power of 9 dBm, the 4× SHM exhibits a conversion loss of 39–43 dB in the lower band (320–340 GHz and 40–48 dB in the upper band (340–360 GHz. The measured input 1-dB conversion gain compression point for the 2× and 4× SHMs are −8 dBm and −10 dBm at 325 GHz, respectively. The simulated LO-IF (intermediate frequency isolation of the 2× SHM is 21.5 dB, and the measured LO-IF isolation of the 4× SHM is 32 dB. The chip areas of the 2× and 4× SHMs are 330 μm × 580 μm and 550 μm × 610 μm, respectively, including the testing pads.

  5. Stress relaxation of thermally bowed fuel pins

    International Nuclear Information System (INIS)

    Crossland, I.G.; Speight, M.V.

    1983-01-01

    The presence of cross-pin temperature gradients in nuclear reactor fuel pins produces differential thermal expansion which, in turn, causes the fuel pin to bow elastically. If the pin is restrained in any way, such thermal bowing causes the pin to be stressed. At high temperatures these stresses can relax by creep and it is shown here that this causes the pin to suffer an additional permanent deflection, so that when the cross-pin temperature difference is removed the pin remains bowed. By representing the cylindrical pin by an equivalent I-beam, the present work examines this effect when it takes place by secondary creep. Two restraint systems are considered, and it is demonstrated that the rate of relaxation depends mainly upon the creep equation, and hence the temperature, and also the magnitude of the initial stresses. (author)

  6. Defect pin behaviour in the DFR

    International Nuclear Information System (INIS)

    Sloss, W.M.; Bagley, K.Q.; Edmonds, E.; Potter, P.E.

    1979-01-01

    A program of defective fuel pin irradiations has been carried out in the DFR. This program employed fuel pins which had failed during previous irradiations (natural defects) and pins in which simulated failures (artificial defects) had been induced prior to irradiation or during an intermediate examination stage at moderate or substantial burnups. The artificial defects simulated longitudinal ruptures and were normally located at positions near the top, middle and bottom of the pin where clad temperatures were 450, 540 and 630 0 C respectively. The fuel was mixed U-Pu oxide, and fuel form, stoichiometry, clad type, pin diameter, linear rating, and burnup were among the variables examined. The defect pin tests were normally carried out in single pin or trefoil type vehicles. After irradiation all the pins were subjected to the normal nondestructive examination procedures and the visual, radiographic, gamma-scanning, and dimensional change results are presented. Several pins were destructively examined and the metallographic data are discussed

  7. Liquid diode

    International Nuclear Information System (INIS)

    1976-01-01

    The liquid diode is designed for a flowmeter chamber which has an inlet and an outlet duct, and a flow chamber with a cross-section which is greater than inlet. In the space between the inlet and outlet are two screens with a number of spheres, which may be of different sizes and weights. The screen on the inlet side is smaller than that at the outlet, so that the spheres are able to block the inlet under reverse flow conditions, but do not block the outlet. The system functions as a non-return valve. (G.C.)

  8. MONJU fuel pin performance analysis

    International Nuclear Information System (INIS)

    Kitagawa, H.; Yamanaka, T.; Hayashi, H.

    1979-01-01

    Monju fuel pin has almost the same properties as other LMFBR fuel pins, i.e. Phenix, PFR, CRBR, but would be irradiated under severe conditions: maximum linear heat rate of 381 watt/cm, hot spot cladding temperature of 675 deg C, peak burnup of 131,000 MWd/t, peak fluence (E greater than 0.1 MeV) of 2.3 10 23 n/cm 2 . In order to understand in-core performance of Monju fuel pin, its thermal and mechanical behaviour was predicted using the fast running performance code SIMPLE. The code takes into account pellet-cladding interaction due to thermal expansion and swelling, gap conductance, structural changes of fuel pellets, fission product gas release with burnup and temperature increase, swelling and creep of fuel pellets, corrosion of cladding due to sodium flow and chemical attack by fission products, and cumulative damage of the cladding due to thermal creep

  9. Neutron radiography of fuel pins

    International Nuclear Information System (INIS)

    Jackson, C.N. Jr.; Powers, H.G.; Burgess, C.A.

    1975-01-01

    Neutron radiography performed with a reactor source has been shown to be a superior radiographic method for the examination of unirradiated mixed oxide fuel pins at the Hanford Engineering Development Laboratory. Approximately 1,700 fuel pins were contained in a sample that demonstrated the capability of the method for detecting laminations, structural flaws, fissile density variation, hydrogenous inclusions and voids in assembled fuel pins. The nature, extent, and importance of the detected conditions are substantiated by gamma autoradiography and by destructive analysis employing alpha autoradiography, electron microprobe and visual inspection. Also, a series of radiographs illustrate the response of neutron radiography as compared to low voltage and high voltage x-ray and gamma source Iridium 192 radiography. (U.S.)

  10. Gun muzzle flash detection using a single photon avalanche diode array in 0.18µm CMOS technology

    Science.gov (United States)

    Savuskan, Vitali; Jakobson, Claudio; Merhav, Tomer; Shoham, Avi; Brouk, Igor; Nemirovsky, Yael

    2015-05-01

    In this study, a CMOS Single Photon Avalanche Diode (SPAD) 2D array is used to record and sample muzzle flash events in the visible spectrum, from representative weapons. SPADs detect the emission peaks of alkali salts, potassium or sodium, with spectral emission lines around 769nm and 589nm, respectively. The alkali salts are included in the gunpowder to suppress secondary flashes ignited during the muzzle flash event. The SPADs possess two crucial properties for muzzle flash imaging: (i) very high photon detection sensitivity, (ii) a unique ability to convert the optical signal to a digital signal at the source pixel, thus practically eliminating readout noise. The sole noise sources are the ones prior to the readout circuitry (optical signal distribution, avalanche initiation distribution and nonphotonic generation). This enables high sampling frequencies in the kilohertz range without significant SNR degradation, in contrast to regular CMOS image sensors. This research will demonstrate the SPAD's ability to accurately sample and reconstruct the temporal behavior of the muzzle flash in the visible wavelength, in the presence of sunlight. The reconstructed signal is clearly distinguishable from background clutter, through exploitation of flash temporal characteristics and signal processing, which will be reported. The frame rate of ~16 KHz was chosen as an optimum between SNR degradation and temporal profile recognition accuracy. In contrast to a single SPAD, the 2D array allows for multiple events to be processed simultaneously. Moreover, a significant field of view is covered, enabling comprehensive surveillance and imaging.

  11. Mode of failure of LMFBR fuel pins

    International Nuclear Information System (INIS)

    Washburn, D.F.

    1975-01-01

    The objectives of the irradiation test described were to evaluate mixed-oxide fuel performance and to confirm the design adequacy of the FFTF fuel pins. After attainment of the initial objectives the irradiation of several of the original fuel pins was continued until a cladding breach occurred. The consequences of a cladding breach were evaluated by reconstituting the original 37-pin subassembly into two 19-pin subassemblies after a burnup at 50,000 MWd/MTM (5.2 a/o). The original pins were supplemented with fresh pins as necessary. Irradiation of the subassemblies was continued until a cladding breach occurred. Results are presented and discussed

  12. Fabrication study of GaAs mesa diodes for X-ray detection

    OpenAIRE

    Ng, J.S.; Meng, X.; Lees, J.E.; Barnett, A.; Tan, C.H.

    2014-01-01

    A study of leakage currents using GaAs mesa p-i-n diodes for X-ray photon counting is presented. Different wet chemical etching solution and etch depth were used in the fabrication of these mesa diodes. Low and uniform leakage currents were achieved when the diode fabrication used (i) a combination of main etching solution and finishing etching solution for the etching, and (ii) partially etched mesas. The diodes fabricated using these methods showed well-defined X-ray peaks when illuminated ...

  13. Improved pinning regime by energetic ions using reduction of pinning potential

    Energy Technology Data Exchange (ETDEWEB)

    Weinstein, Roy; Gandini, Alberto; Sawh, Ravi-Persad; Parks, Drew; Mayes, Bill

    2003-05-15

    When ion damage is used to create pinning centers, full columnar pinning centers provide the largest pinning potential, U{sub pin}, but not the greatest J{sub c} or pinned field, B{sub pin}. Some of the characteristics of columnar defects which limit J{sub c} and B{sub pin} are discussed, including reduction of percolation path, and the need for a larger number of columns of damage, for pinning, than are usually estimated. It is concluded that columnar pinning centers are limited to B{sub pin}<4 T, and also severely reduce J{sub c}. Evidence is reviewed that aligned damage, or broken-columnar pinning centers, described herein, can provide orders of magnitude higher J{sub c}, and higher pinned field, despite providing lower U{sub pin}. A pinning center morphology is discussed which utilizes multiple-in-line-damage (MILD). For, e.g., present day large grain HTS J{sub c}, obtainable by MILD pinning, is estimated to be of the order of 10{sup 6} A/cm{sup 2} at 77 K, even when crystal plane alignment and weak links are not improved. Pinned field is increased by over an order of magnitude. An experiment is proposed to confirm these observations, and to directly compare MILD to columnar pinning centers. It will also determine the optimum MILD structure. Other measurements of interest, made possible by the same data set, are described.

  14. Multicenter Study of Pin Site Infections and Skin Complications Following Pinning of Pediatric Supracondylar Humerus Fractures.

    Science.gov (United States)

    Combs, Kristen; Frick, Steven; Kiebzak, Gary

    2016-12-03

    Pediatric supracondylar humerus fractures are the most common elbow fractures in pediatric patients. Surgical fixation using pins is the primary treatment for displaced fractures. Pin site infections may follow supracondylar humerus fracture fixation; the previously reported incidence rate in the literature is 2.34%, but there is significant variability in reported incidence rates of pin site infection. This study aims to define the incidence rate and determine pre-, peri-, and postoperative factors that may contribute to pin site infection following operative reduction, pinning, and casting. A retrospective chart analysis was performed over a one-year period on patients that developed pin site infection. A cast care form was added to Nemours' electronic medical records (EMR) system (Epic Systems Corp., Verona, WI) to identify pin site infections for retrospective review. The cast care form noted any inflamed or infected pins. Patients with inflamed or infected pin sites underwent a detailed chart review. Preoperative antibiotic use, number and size of pins used, method of postoperative immobilization, pin dressings, whether postoperative immobilization was changed prior to pin removal, and length of time pins were in place was recorded. A total of 369 patients underwent operative reduction, pinning, and casting. Three patients developed a pin site infection. The pin site infection incidence rate was 3/369=0.81%. Descriptive statistics were reported for the three patients that developed pin site infections and three patients that developed pin site complications. Pin site infection development is low. Factors that may contribute to the development of pin site infection include preoperative antibiotic use, length of time pins are left in, and changing the cast prior to pin removal.

  15. Fuel pin bowing in CAGR

    International Nuclear Information System (INIS)

    Crossland, I.G.

    1982-01-01

    Some of the more important mechanisms by which pin bowing can occur in Advanced Gas Cooled Reactors are examined. These include creep relaxation of the stresses which occur when thermal bowing is restrained and asymmetric axial clad creep. The clad temperature changes which accompany such bowing are also investigated and the theoretical results briefly compared with the empirical behaviour. (author)

  16. Suspension scheme for fuel pin

    International Nuclear Information System (INIS)

    Butts, C.E.; Gray, H.C.

    1975-01-01

    A description is presented of a nuclear fuel pin suspension arrangement comprising, in combination, a rod; a first beam member connected to said rod at one end; a plurality of parallel-spaced slidable fuel support plates attached to said first beam member, the longitudinal axis of first beam member being perpendicular to the longitudinal axis of each of said fuel support plates, a first coupling means disposed along the length of the first beam member for permitting slidable fuel support plates parallel movement with respect to the longitudinal axis of said first beam member, a second coupling means located at one end of each of slidable fuel plates for slidably engaging first coupling means of first beam member, a second beam member connected to the other end of each of parallel-spaced slidable fuel support plates and providing an extension, second beam member being provided with a third coupling means disposed along the length of second beam member at one end thereof; and a plurality of fuel pins provided with a fourth coupling means located at one end of each fuel pin for slidably engaging third coupling means of second beam member to permit each fuel pin parallel movement with respect to the longitudinal axis of second beam member. (U.S.)

  17. Improving tribological and anti-bacterial properties of titanium external fixation pins through surface ceramic conversion.

    Science.gov (United States)

    Dong, Huan; Mukinay, Tatiana; Li, Maojun; Hood, Richard; Soo, Sein Leung; Cockshott, Simon; Sammons, Rachel; Li, Xiaoying

    2017-01-01

    In this study, an advanced ceramic conversion surface engineering technology has been applied for the first time to self-drilling Ti6Al4V external fixation pins to improve their performance in terms of biomechanical, bio-tribological and antibacterial properties. Systematic characterisation of the ceramic conversion treated Ti pins was carried out using Scanning electron microscope, X-ray diffraction, Glow-discharge optical emission spectroscopy, nano- and micro-indentation and scratching; the biomechanical and bio-tribological properties of the surface engineered Ti pins were evaluated by insertion into high density bone simulation material; and the antibacterial behaviour was assessed with Staphylococcus aureus NCTC 6571. The experimental results have demonstrated that the surfaces of Ti6Al4V external fixation pins were successfully converted into a TiO 2 rutile layer (~2 μm in thickness) supported by an oxygen hardened case (~15 μm in thickness) with very good bonding due to the in-situ conversion nature. The maximum insertion force and temperature were reduced from 192N and 31.2 °C when using the untreated pins to 182N and 26.1 °C when the ceramic conversion treated pins were tested. This is mainly due to the significantly increased hardness (more than three times) and the effectively enhanced wear resistance of the cutting edge of the self-drilling Ti pins following the ceramic conversion treatment. The antibacterial tests also revealed that there was a significantly reduced number of bacteria isolated from the ceramic conversion treated pins compared to the untreated pins of around 50 % after 20 h incubation, P < 0.01 (0.0024). The results reported are encouraging and could pave the way towards high-performance anti-bacterial titanium external fixation pins with reduced pin-track infection and pin loosing.

  18. Lightning Pin Injection Testing on MOSFETS

    Science.gov (United States)

    Ely, Jay J.; Nguyen, Truong X.; Szatkowski, George N.; Koppen, Sandra V.; Mielnik, John J.; Vaughan, Roger K.; Wysocki, Philip F.; Celaya, Jose R.; Saha, Sankalita

    2009-01-01

    Lightning transients were pin-injected into metal-oxide-semiconductor field-effect transistors (MOSFETs) to induce fault modes. This report documents the test process and results, and provides a basis for subsequent lightning tests. MOSFETs may be present in DC-DC power supplies and electromechanical actuator circuits that may be used on board aircraft. Results show that unprotected MOSFET Gates are susceptible to failure, even when installed in systems in well-shielded and partial-shielded locations. MOSFET Drains and Sources are significantly less susceptible. Device impedance decreased (current increased) after every failure. Such a failure mode may lead to cascading failures, as the damaged MOSFET may allow excessive current to flow through other circuitry. Preliminary assessments on a MOSFET subjected to 20-stroke pin-injection testing demonstrate that Breakdown Voltage, Leakage Current and Threshold Voltage characteristics show damage, while the device continues to meet manufacturer performance specifications. The purpose of this research is to develop validated tools, technologies, and techniques for automated detection, diagnosis and prognosis that enable mitigation of adverse events during flight, such as from lightning transients; and to understand the interplay between lightning-induced surges and aging (i.e. humidity, vibration thermal stress, etc.) on component degradation.

  19. Final report for EDI energy conservation with diode light; Slutrapport for EDI energibesparelser med diodelys

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2006-07-01

    The aim of this project has been to develop technological knowledge and a competence platform for utilization of new light emitting diode technology for general lighting purposes. Furthermore the project has aimed at developing a 3 W light diode bulb to replace 15-20 W filament bulbs and halogen spotlights, and thereby demonstrating a large energy conservation potential in the use of LED technology for lighting purposes. (BA)

  20. Performance Analysis of OCDMA Based on AND Detection in FTTH Access Network Using PIN & APD Photodiodes

    Science.gov (United States)

    Aldouri, Muthana; Aljunid, S. A.; Ahmad, R. Badlishah; Fadhil, Hilal A.

    2011-06-01

    In order to comprise between PIN photo detector and avalanche photodiodes in a system used double weight (DW) code to be a performance of the optical spectrum CDMA in FTTH network with point-to-multi-point (P2MP) application. The performance of PIN against APD is compared through simulation by using opt system software version 7. In this paper we used two networks designed as follows one used PIN photo detector and the second using APD photo diode, both two system using with and without erbium doped fiber amplifier (EDFA). It is found that APD photo diode in this system is better than PIN photo detector for all simulation results. The conversion used a Mach-Zehnder interferometer (MZI) wavelength converter. Also we are study, the proposing a detection scheme known as AND subtraction detection technique implemented with fiber Bragg Grating (FBG) act as encoder and decoder. This FBG is used to encode and decode the spectral amplitude coding namely double weight (DW) code in Optical Code Division Multiple Access (OCDMA). The performances are characterized through bit error rate (BER) and bit rate (BR) also the received power at various bit rate.

  1. Pinning synchronization of a mobile agent network

    International Nuclear Information System (INIS)

    Wang, Lei; Sun, You-xian

    2009-01-01

    We investigate the problem of controlling a group of mobile agents in a plane in order to move them towards a desired orbit via pinning control, in which each agent is associated with a chaotic oscillator coupled with those of neighboring agents, and the pinning strategy is to have the common linear feedback acting on a small fraction of agents by random selection. We explore the effects of the pinning probability, feedback gains and agent density in the pinning synchronization of a mobile agent network under a fast-switching constraint, and perform numerical simulations for validation. In particular, we show that there exists a critical pinning density for network synchronization with an unbounded region: above the threshold, the dynamical network can be controlled by pinning; below it, anarchy prevails. And for the network with a single bounded synchronization region, pinning control has little effect as regards enhancing network synchronizability

  2. Ampfion-hybrid diode on the Cornell LION accelerator

    International Nuclear Information System (INIS)

    Rondeau, G.D.; Greenly, J.B.; Hammer, D.A.

    1984-01-01

    An ampfion hybrid diode, previously run on the HYDRAMITE accelerator at Sandia National Laboratories has recently been installed on the Cornell LION accelerator (1 TW, 1.8 MV, 40 ns pulse). The ampfion hybrid diode is magnetically insulated by means of a field coil in series with the cathode structure of the diode. An epoxy dielectric flashboard on the anode provides an anode plasma to supply the extracted ions. The diode has a geometric focal length of 20 cm. The experiment is equipped with plasma erosion opening switches on the anode stock to eliminate prepulse and improve the generator voltage risetime. Diagnostics include magnetic pickup loops to measure currents in the diode structure and non-neutral beam currents, biased charge collectors, and damage targets. An alpha particle pin hole camera utilizing the p,α reaction of fast (>500 kV) protons on boron or lithium is being developed to measure focus quality and proton current. Plastic track detector will be used to image the alpha particles coming from a boron or lithium target. A second pin hole camera uses a plastic scintillator and light detector to give time resolved focused ion intensity

  3. Sodium Loop Safety Facility W-2 experiment fuel pin rupture detection system. [LMFBR

    Energy Technology Data Exchange (ETDEWEB)

    Hoffman, M.A.; Kirchner, T.L.; Meyers, S.C.

    1980-05-01

    The objective of the Sodium Loop Safety Facility (SLSF) W-2 experiment is to characterize the combined effects of a preconditioned full-length fuel column and slow transient overpower (TOP) conditions on breeder reactor (BR) fuel pin cladding failures. The W-2 experiment will meet this objective by providing data in two technological areas: (1) time and location of cladding failure, and (2) early post-failure test fuel behavior. The test involves a seven pin, prototypic full-length fast test reactor (FTR) fuel pin bundle which will be subjected to a simulated unprotected 5 cents/s reactivity transient overpower event. The outer six pins will provide the necessary prototypic thermal-hydraulic environment for the center pin.

  4. Sodium Loop Safety Facility W-2 experiment fuel pin rupture detection system

    International Nuclear Information System (INIS)

    Hoffman, M.A.; Kirchner, T.L.; Meyers, S.C.

    1980-05-01

    The objective of the Sodium Loop Safety Facility (SLSF) W-2 experiment is to characterize the combined effects of a preconditioned full-length fuel column and slow transient overpower (TOP) conditions on breeder reactor (BR) fuel pin cladding failures. The W-2 experiment will meet this objective by providing data in two technological areas: (1) time and location of cladding failure, and (2) early post-failure test fuel behavior. The test involves a seven pin, prototypic full-length fast test reactor (FTR) fuel pin bundle which will be subjected to a simulated unprotected 5 cents/s reactivity transient overpower event. The outer six pins will provide the necessary prototypic thermal-hydraulic environment for the center pin

  5. Clinical and histomorphometrical study on titanium dioxide-coated external fixation pins

    Directory of Open Access Journals (Sweden)

    Koseki H

    2013-02-01

    Full Text Available Hironobu Koseki,1 Tomohiko Asahara,1 Takayuki Shida,1 Itaru Yoda,1 Hidehiko Horiuchi,1 Koumei Baba,2 Makoto Osaki11Department of Orthopedic Surgery, Graduate School of Medicine, Nagasaki University, 2Industrial Technology Center of Nagasaki, Nagasaki, JapanBackground: Pin site infection is the most common and significant complication of external fixation. In this work, the efficacy of pins coated with titanium dioxide (TiO2 for inhibition of infection was compared with that of stainless steel control pins in an in vivo study.Methods: Pins contaminated with an identifiable Staphylococcus aureus strain were inserted into femoral bone in a rat model and exposed to ultraviolet A light for 30 minutes. On day 14, the animals were sacrificed and the bone and soft tissue around the pin were retrieved. The clinical findings and histological findings were evaluated in 60 samples.Results: Clinical signs of infection were present in 76.7% of untreated pins, but in only 36.7% of TiO2-coated pins. The histological bone infection score and planimetric rate of occupation for bacterial colonies and neutrophils in the TiO2-coated pin group were lower than those in the control group. The bone-implant contact ratio of the TiO2-coated pin group was significantly higher (71.4% than in the control pin group (58.2%. The TiO2 was successful in decreasing infection both clinically and histomorphometrically.Conclusion: The photocatalytic bactericidal effect of TiO2 is thought to be useful for inhibiting pin site infection after external fixation.Keywords: titanium dioxide, external fixation, bactericidal activity, Staphylococcus aureus

  6. Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

    International Nuclear Information System (INIS)

    Feng-Ping, Chen; Yu-Ming, Zhang; Hong-Liang, Lü; Yi-Men, Zhang; Jian-Hua, Huang

    2010-01-01

    This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  8. Radiation effects on breakdown in silicon multiguarded diodes

    International Nuclear Information System (INIS)

    Bisello, D.; Da Rold, M.; Franzin, L.; Wheadon, R.

    1996-01-01

    The authors have investigated the current-voltage characteristics of silicon PIN diodes with a number of different multiguard structures. These structures were designed to increase the overall device breakdown voltage. The same measurements were carried out after gamma irradiation at different doses and neutron irradiation at fluences beyond type-inversion. This study is a first step towards defining guard structures optimized for operation in high-radiation environments such as those expected at the LHC

  9. Minimum ionizing particle detection using amorphous silicon diodes

    Energy Technology Data Exchange (ETDEWEB)

    Xi, J.; Hollingsworth, R.E.; Buitrago, R.H. (Glasstech Solar, Inc., Wheat Ridge, CO (USA)); Oakley, D.; Cumalat, J.P.; Nauenberg, U. (Colorado Univ., Boulder (USA). Dept. of Physics); McNeil, J.A. (Colorado School of Mines, Golden (USA). Dept. of Physics); Anderson, D.F. (Fermi National Accelerator Lab., Batavia, IL (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

    1991-03-01

    Hydrogenated amorphous silicon pin diodes have been used to detect minimum ionizing electrons with a pulse height signal-to-noise ratio exceeding 3. A distinct signal was seen for shaping times from 100 to 3000 ns. The devices used had a 54 {mu}m thick intrinsic layer and an active area of 0.1 cm{sup 2}. The maximum signal was 3200 electrons with a noise width of 950 electrons for a shaping time of 250 ns. (orig.).

  10. Long pulse diode experiments

    Science.gov (United States)

    McClenahan, Charles R.; Weber, Gerald J.; Omalley, Martin W.; Stewart, Joseph; Rinehart, Larry F.; Buttram, Malcolm T.

    1990-10-01

    A diode employing a thermionic cathode has produced 80 A beams at 200 kV for at least 6 microseconds. Moreover, the diode operates at rates as high as 1 Hz. EGUN simulations of the experimental geometry agree with the experiments. Finally, simulation of a proposed diode geometry predicts a 1 kA, 500 kV beam.

  11. Unicortical self-drilling external fixator pins reduce thermal effects during pin insertion.

    Science.gov (United States)

    Greinwald, Markus; Varady, Patrick A; Augat, Peter

    2017-12-14

    External fixation is associated with the risk of pin loosening and pin infection potentially associated to thermal bone necrosis during pin insertion. This study aims to investigate if the use of external fixator systems with unicortical pins reduces the heat production during pin insertion compared to fixators with bicortical pins. Porcine bone specimens were employed to determine bone temperatures during insertion of fixator pins. Two thermographic cameras were used for a simultaneous temperature measurement on the bone surface (top view) and a bone cross-section (front view). Self-drilling unicortical and bicortical pins were inserted at different rotational speeds: (30-600) rpm. Maximum and mean temperatures of the emerging bone debris, bone surface and bone cross-section were analyzed. Maximum temperatures of up to 77 ± 26 °C were measured during pin insertion in the emerging debris and up to 42 ± 2 °C on the bone surface. Temperatures of the emerging debris increased with increasing rotational speeds. Bicortical pin insertion generated significantly higher temperatures at low insertion speed (30 rpm) CONCLUSION: The insertion of external fixator pins can generate a considerable amount of heat around the pins, primarily emerging from bone debris and at higher insertion speeds. Our findings suggest that unicortical, self-drilling fixator pins have a decreased risk for thermal damage, both to the surrounding tissue and to the bone itself.

  12. Pin Wire Coating Trip Report

    International Nuclear Information System (INIS)

    Spellman, G P

    2004-01-01

    A meeting to discuss the current pin wire coating problems was held at the Reynolds plant in Los Angeles on 2MAR04. The attendance list for Reynolds personnel is attached. there was an initial presentation which gave a brief history and the current status of pin wire coating at Reynolds. There was a presentation by Lori Primus on the requirements and issues for the coating. There was a presentation by Jim Smith of LANL on the chemistry and to some extent process development done to date. There was a long session covering what steps should be taken in the short term and, to a lesser extent, the long term. The coating currently being used is a blend of two polymers, polyethersulfone and polyparabanic acid (PPA) and some TiO2 filler. This system was accepted and put into production when the pin wire coating was outsourced to another company in 1974. When that company no longer was interested, the wire coating was brought in-house to Reynolds. At that time polyparabanic acid was actually a commercial product available from Exxon under the trade name Tradlon. However, it appears that the material used at Reynolds was synthesized locally. Also, it appears that a single large batch was synthesized in that time period and used up to 1997 when the supply ran out. The reason for the inclusion of TiO2 is not known although it does act as a rheological thickener. However, a more controlled thickening can be obtained with materials such as fumed silica. This material would have less likelihood of causing point imperfections in the coatings. Also, the mixing technique being used for all stages of the process is a relatively low shear ball mill process and the author recommends a high shear process such as a three roll paint mill, at least for the final mixing. Since solvent is added to the powder at Reynolds, it may be that they need to have the paint mill there

  13. Transient survivability of LMR oxide fuel pins

    International Nuclear Information System (INIS)

    Weber, E.T.; Pitner, A.L.; Bard, F.E.; Culley, G.E.; Hunter, C.W.

    1986-01-01

    Fuel pin integrity during transient events must be assessed for both the core design and safety analysis phases of a reactor project. A significant increase in the experience related to limits of integrity for oxide fuel pins in transient overpower events has been realized from testing of fuel pins irradiated in FFTF and PFR. Fourteen FFTF irradiated fuel pins were tested in TREAT, representing a range of burnups, overpower ramp rates and maximum overpower conditions. Results of these tests along with similar testing in the PFR/TREAT program, provide a demonstration of significant safety margins for oxide fuel pins. Useful information applied in analytical extrapolation of fuel pin test data have been developed from laboratory transient tests on irradiated fuel cladding (FCTT) and on unirradiated fuel pellet deformation. These refinements in oxide fuel transient performance are being applied in assessment of transient capabilities of long lifetime fuel designs using ferritic cladding

  14. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  15. Cesium migration in LMFBR fuel pins

    International Nuclear Information System (INIS)

    Karnesky, R.A.; Jost, J.W.; Stone, I.Z.

    1978-10-01

    The factors affecting the axial migration of cesium in mixed oxide fuel pins and the effects of cesium migration on fuel pin performance are examined. The development and application of a correlated model which will predict the occurrence of cesium migration in a mixed oxide (75 w/o UO 2 + 25 w/o PuO 2 ) fuel pins over a wide range of fabrication and irradiation conditions are described

  16. FFTF fuel pin design bases and performance

    International Nuclear Information System (INIS)

    Cox, C.M.; Hanson, J.E.; Roake, W.E.; Slember, R.J.; Weber, C.E.; Millunzi, A.C.

    1975-04-01

    The FFTF fuel pin was conservatively designed to meet thermal and structural performance requirements in the categories normal operation, upset events, emergency events, and hypothetical, faulted events. The fuel pin operating limits consistent with these requirements were developed from a strong fuel pin irradiation testing program scoped to define the performance capability under relevant steady state and transient conditions. Comparison of the results of the irradiation testing program with design requirements indicates that the FFTF fuel pin can exceed its goal burnup of 80,000 MWd/MTM. (U.S.)

  17. Integral Fast Reactor fuel pin processor

    International Nuclear Information System (INIS)

    Levinskas, D.

    1993-01-01

    This report discusses the pin processor which receives metal alloy pins cast from recycled Integral Fast Reactor (IFR) fuel and prepares them for assembly into new IFR fuel elements. Either full length as-cast or precut pins are fed to the machine from a magazine, cut if necessary, and measured for length, weight, diameter and deviation from straightness. Accepted pins are loaded into cladding jackets located in a magazine, while rejects and cutting scraps are separated into trays. The magazines, trays, and the individual modules that perform the different machine functions are assembled and removed using remote manipulators and master-slaves

  18. Magnetic pinning in superconductor-ferromagnet multilayers

    International Nuclear Information System (INIS)

    Bulaevskii, L. N.; Chudnovsky, E. M.; Maley, M. P.

    2000-01-01

    We argue that superconductor/ferromagnet multilayers of nanoscale period should exhibit strong pinning of vortices by the magnetic domain structure in magnetic fields below the coercive field when ferromagnetic layers exhibit strong perpendicular magnetic anisotropy. The estimated maximum magnetic pinning energy for single vortex in such a system is about 100 times larger than the pinning energy by columnar defects. This pinning energy may provide critical currents as high as 10 6 -10 7 A/cm 2 at high temperatures (but not very close to T c ) at least in magnetic fields below 0.1 T. (c) 2000 American Institute of Physics

  19. Magnetic pinning in superconductor-ferromagnet multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Bulaevskii, L. N. [Department of Physics and Astronomy, CUNY Lehman College 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Chudnovsky, E. M. [Department of Physics and Astronomy, CUNY Lehman College, 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Maley, M. P. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2000-05-01

    We argue that superconductor/ferromagnet multilayers of nanoscale period should exhibit strong pinning of vortices by the magnetic domain structure in magnetic fields below the coercive field when ferromagnetic layers exhibit strong perpendicular magnetic anisotropy. The estimated maximum magnetic pinning energy for single vortex in such a system is about 100 times larger than the pinning energy by columnar defects. This pinning energy may provide critical currents as high as 10{sup 6}-10{sup 7} A/cm{sup 2} at high temperatures (but not very close to T{sub c}) at least in magnetic fields below 0.1 T. (c) 2000 American Institute of Physics.

  20. Fabrication of FFTF fuel pin wire wrap

    International Nuclear Information System (INIS)

    Epperson, E.M.

    1980-06-01

    Lateral spacing between FFTF fuel pins is required to provide a passageway for the sodium coolant to flow over each pin to remove heat generated by the fission process. This spacing is provided by wrapping each fuel pin with type 316 stainless steel wire. This wire has a 1.435mm (0.0565 in.) to 1.448mm (0.0570 in.) diameter, contains 17 +- 2% cold work and was fabricated and tested to exacting RDT Standards. About 500 kg (1100 lbs) or 39 Km (24 miles) of fuel pin wrap wire is used in each core loading. Fabrication procedures and quality assurance tests are described

  1. Program of quality management when fabricating fast reactor vibropack oxide fuel pins

    International Nuclear Information System (INIS)

    Mayorshin, A.A.; Kisly, V.A.; Sudakov, L.V.

    2000-01-01

    There are presented main principles of creation and operation of Quality Management Program in fabricating vibropack oxide fuel pins for BOR-60 and BN-600 being in force in SSC RF RIAR. There is given structure of documentation for QS principal elements. Under Quality System there are defined all the procedures, assuring that fuel pin meets the normative requirements. The system model is complied with the standard model IS 9001. There are shown technologic flowchart and check operation, statistic results of pin critical parameter check as well as main results of in-pile tests. (author)

  2. Position-dependency of Fuel Pin Homogenization in a Pressurized Water Reactor

    Energy Technology Data Exchange (ETDEWEB)

    Heo, Woong; Kim, Yonghee [Korea Advanced Institute of Science and Technolgy, Daejeon (Korea, Republic of)

    2016-05-15

    By considering the multi-physics effects more comprehensively, it is possible to acquire precise local parameters which can result in a more accurate core design and safety assessment. A conventional approach of the multi-physics neutronics calculation for the pressurized water reactor (PWR) is to apply nodal methods. Since the nodal methods are basically based on the use of assembly-wise homogenized parameters, additional pin power reconstruction processes are necessary to obtain local power information. In the past, pin-by-pin core calculation was impractical due to the limited computational hardware capability. With the rapid advancement of computer technology, it is now perhaps quite practical to perform the direct pin-by-pin core calculation. As such, fully heterogeneous transport solvers based on both stochastic and deterministic methods have been developed for the acquisition of exact local parameters. However, the 3-D transport reactor analysis is still challenging because of the very high computational requirement. Position-dependency of the fuel pin homogenized cross sections in a small PWR core has been quantified via comparison of infinite FA and 2-D whole core calculations with the use of high-fidelity MC simulations. It is found that the pin environmental affect is especially obvious in FAs bordering the baffle reflector regions. It is also noted that the downscattering cross section is rather sensitive to the spectrum changes of the pins. It is expected that the pinwise homogenized cross sections need to be corrected somehow for accurate pin-by-pin core calculations in the peripheral region of the reactor core.

  3. Reduction of halo pin site morbidity with a new pin care regimen.

    Science.gov (United States)

    Kazi, Hussain Anthony; de Matas, Marcus; Pillay, Robin

    2013-06-01

    A retrospective analysis of halo device associated morbidity over a 4-year period. To assess the impact of a new pin care regimen on halo pin site related morbidity. Halo orthosis treatment still has a role in cervical spine pathology, despite increasing possibilities of open surgical treatment. Published figures for pin site infection range from 12% to 22% with pin loosening from 7% to 50%. We assessed the outcome of a new pin care regimen on morbidity associated with halo spinal orthoses, using a retrospective cohort study from 2001 to 2004. In the last two years, our pin care regimen was changed. This involved pin site care using chlorhexidene & regular torque checking as part of a standard protocol. Previously, povidone iodine was used as skin preparation in theatre, followed by regular sterile saline cleansing when pin sites became encrusted with blood. There were 37 patients in the series, the median age was 49 (range, 22-83) and 20 patients were male. The overall infection rate prior to the new pin care protocol was 30% (n=6) and after the introduction, it dropped to 5.9% (n=1). This difference was statistically significant (p<0.05). Pin loosening occurred in one patient in the group prior to the formal pin care protocol (3%) and none thereafter. Reduced morbidity from halo use can be achieved with a modified pin cleansing and tightening regimen.

  4. Phosphorylation of conserved PIN motifs directs Arabidopsis PIN1 polarity and auxin transport

    NARCIS (Netherlands)

    Huang, F.; Kemel Zago, M.; Abas, L.; van Marion, A.; Galván-Ampudia, C.S.; Offringa, R.

    2010-01-01

    Polar cell-to-cell transport of auxin by plasma membrane-localized PIN-FORMED (PIN) auxin efflux carriers generates auxin gradients that provide positional information for various plant developmental processes. The apical-basal polar localization of the PIN proteins that determines the direction of

  5. Polycrystalline Diamond Schottky Diodes and Their Applications.

    Science.gov (United States)

    Zhao, Ganming

    In this work, four-hot-filament CVD techniques for in situ boron doped diamond synthesis on silicon substrates were extensively studied. A novel tungsten filament shape and arrangement used to obtain large-area, uniform, boron doped polycrystalline diamond thin films. Both the experimental results and radiative heat transfer analysis showed that this technique improved the uniformity of the substrate temperature. XRD, Raman and SEM studies indicate that large area, uniform, high quality polycrystalline diamond films were obtained. Schottky diodes were fabricated by either sputter deposition of silver or thermal evaporation of aluminum or gold, on boron doped diamond thin films. High forward current density and a high forward-to-reverse current ratio were exhibited by silver on diamond Schottky diodes. Schottky barrier heights and the majority carrier concentrations of both aluminum and gold contacted diodes were determined from the C-V measurements. Furthermore, a novel theoretical C-V-f analysis of deep level boron doped diamond Schottky diodes was performed. The analytical results agree well with the experimental results. Compressive stress was found to have a large effect on the forward biased I-V characteristics of the diamond Schottky diodes, whereas the effect on the reverse biased characteristics was relatively small. The stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. This result shows that CVD diamond device has potential for mechanical transducer applications. The quantitative photoresponse characteristics of the diodes were studied in the spectral range of 300 -1050 nm. Semi-transparent gold contacts were used for better photoresponse. Quantum efficiency as high as 50% was obtained at 500 nm, when a reverse bias of over 1 volt was applied. The Schottky barrier heights between either gold or

  6. Diode lasers: From laboratory to industry

    Science.gov (United States)

    Nasim, Hira; Jamil, Yasir

    2014-03-01

    The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

  7. Synchronizability on complex networks via pinning control

    Indian Academy of Sciences (India)

    Keywords. Complex network; the pinning synchronization; synchronizability. ... The findings reveal the relationship between the decreasing speed of maximum eigenvalue sequence of the principal submatrices for coupling matrix and the synchronizability on complex networks via pinning control. We discuss the ...

  8. Breached-pin testing in the US

    International Nuclear Information System (INIS)

    Mahagin, D.E.; Lambert, J.D.B.

    1981-04-01

    Experience gained at EBR-II by the late 1970's from a significant number of failures in experimental fuel-pin irradiations forms the basis of a program directed towards the characterization of breached pins. The questions to be answered and the issues raised by further testing are discussed

  9. TACO: fuel pin performance analysis

    International Nuclear Information System (INIS)

    Stoudt, R.H.; Buchanan, D.T.; Buescher, B.J.; Losh, L.L.; Wilson, H.W.; Henningson, P.J.

    1977-08-01

    The thermal performance of fuel in an LWR during its operational lifetime must be described for LOCA analysis as well as for other safety analyses. The determination of stored energy in the LOCA analysis, for example, requires a conservative fuel pin thermal performance model that is capable of calculating fuel and cladding behavior, including the gap conductance between the fuel and cladding, as a function of burnup. The determination of parameters that affect the fuel and cladding performance, such as fuel densification, fission gas release, cladding dimensional changes, fuel relocation, and thermal expansion, should be accounted for in the model. Babcock and Wilcox (B and W) has submitted a topical report, BAW-10087P, December 1975, which describes their thermal performance model TACO. A summary of the elements that comprise the TACO model and an evaluation are presented

  10. Incommensurate pinning mechanism in KCP

    International Nuclear Information System (INIS)

    Apostol, M.; Baldea, I.

    1984-07-01

    A new pinning mechanism (termed incommensurate) is put forward for K 2 Pt(CN) 4 Brsub(0.3)x3.2H 2 O(KCP) based on the Q-quasi-modulated distribution of the bromine anions (Br-bar) along the chain axis (Q/2 being the Fermi momentum reduced to the first Brillouin zone). The different origins of the direct current (d.c.) thermally-activated gap and optical gap are thereby explained. The spectrum of the collective excitations (amplitudons and phasons) and the dielectric function are calculated for the charge density wave (CDW) state. Fair agreement is obtained with the optical and neutron scattering data. (author)

  11. Pinning impulsive control algorithms for complex network

    International Nuclear Information System (INIS)

    Sun, Wen; Lü, Jinhu; Chen, Shihua; Yu, Xinghuo

    2014-01-01

    In this paper, we further investigate the synchronization of complex dynamical network via pinning control in which a selection of nodes are controlled at discrete times. Different from most existing work, the pinning control algorithms utilize only the impulsive signals at discrete time instants, which may greatly improve the communication channel efficiency and reduce control cost. Two classes of algorithms are designed, one for strongly connected complex network and another for non-strongly connected complex network. It is suggested that in the strongly connected network with suitable coupling strength, a single controller at any one of the network's nodes can always pin the network to its homogeneous solution. In the non-strongly connected case, the location and minimum number of nodes needed to pin the network are determined by the Frobenius normal form of the coupling matrix. In addition, the coupling matrix is not necessarily symmetric or irreducible. Illustrative examples are then given to validate the proposed pinning impulsive control algorithms

  12. Resistance projection welding small pins in vacuum tube feedthrough assembly

    International Nuclear Information System (INIS)

    Kuncz, F. Jr.

    1980-01-01

    Resistance projection welding of two stainless steel pins to a cup is successfully accomplished by specially designed electrodes and by forming domes on the pin ends. Details of electrode and pin construction are given, as well as welding parameters

  13. Experimental study of the mechanical behaviour of pin reinforced foam core sandwich materials under shear load

    International Nuclear Information System (INIS)

    Dimassi, M A; Brauner, C; Herrmann, A S

    2016-01-01

    Sandwich structures with a lightweight closed cell hard foam core have the potential to be used in primary structures of commercial aircrafts. Compared to honeycomb core sandwich, the closed cell foam core sandwich overcomes the issue of moisture take up and makes the manufacturing of low priced and highly integrated structures possible. However, lightweight foam core sandwich materials are prone to failure by localised external loads like low velocity impacts. Invisible cracks could grow in the foam core and threaten the integrity of the structure. In order to enhance the out-of-plane properties of foam core sandwich structures and to improve the damage tolerance (DT) dry fibre bundles are inserted in the foam core. The pins are infused with resin and co-cured with the dry fabric face sheets in an out-of-autoclave process. This study presents the results obtained from shear tests following DIN 53294-standard, on flat sandwich panels. All panels were manufactured with pin-reinforcement manufactured with the Tied Foam Core Technology (TFC) developed by Airbus. The effects of pin material (CFRP and GFRP) and pin volume fraction on the shear properties of the sandwich structure and the crack propagation were investigated and compared to a not pinned reference. It has been concluded that the pin volume fraction has a remarkable effect on the shear properties and damage tolerance of the observed structure. Increasing the pin volume fraction makes the effect of crack redirection more obvious and conserves the integrity of the structure after crack occurrence. (paper)

  14. April 25, 2003, FY2003 Progress Summary and FY2002 Program Plan, Statement of Work and Deliverables for Development of High Average Power Diode-Pumped Solid State Lasers,and Complementary Technologies, for Applications in Energy and Defense

    International Nuclear Information System (INIS)

    Meier, W; Bibeau, C

    2005-01-01

    The High Average Power Laser Program (HAPL) is a multi-institutional, synergistic effort to develop inertial fusion energy (IFE). This program is building a physics and technology base to complement the laser-fusion science being pursued by DOE Defense programs in support of Stockpile Stewardship. The primary institutions responsible for overseeing and coordinating the research activities are the Naval Research Laboratory (NRL) and Lawrence Livermore National Laboratory (LLNL). The current LLNL proposal is a companion document to the one submitted by NRL, for which the driver development element is focused on the krypton fluoride excimer laser option. The NRL and LLNL proposals also jointly pursue complementary activities with the associated rep-rated laser technologies relating to target fabrication, target injection, final optics, fusion chamber, target physics, materials and power plant economics. This proposal requests continued funding in FY03 to support LLNL in its program to build a 1 kW, 100 J, diode-pumped, crystalline laser, as well as research into high gain fusion target design, fusion chamber issues, and survivability of the final optic element. These technologies are crucial to the feasibility of inertial fusion energy power plants and also have relevance in rep-rated stewardship experiments. The HAPL Program pursues technologies needed for laser-driven IFE. System level considerations indicate that a rep-rated laser technology will be needed, operating at 5-10 Hz. Since a total energy of ∼2 MJ will ultimately be required to achieve suitable target gain with direct drive targets, the architecture must be scaleable. The Mercury Laser is intended to offer such an architecture. Mercury is a solid state laser that incorporates diodes, crystals and gas cooling technologies

  15. Pin fin compliant heat sink with enhanced flexibility

    Science.gov (United States)

    Schultz, Mark D.

    2018-04-10

    Heat sinks and methods of using the same include a top and bottom plate, at least one of which has a plurality of pin contacts flexibly connected to one another, where the plurality of pin contacts have vertical and lateral flexibility with respect to one another; and pin slice layers, each having multiple pin slices, arranged vertically between the top and bottom plates such that the plurality of pin slices form substantially vertical pins connecting the top and bottom plates.

  16. Molecular diodes in optical rectennas

    Science.gov (United States)

    Duché, David; Palanchoke, Ujwol; Terracciano, Luigi; Dang, Florian-Xuan; Patrone, Lionel; Le Rouzo, Judikael; Balaban, Téodore Silviu; Alfonso, Claude; Charai, Ahmed; Margeat, Olivier; Ackermann, Jorg; Gourgon, Cécile; Simon, Jean-Jacques; Escoubas, Ludovic

    2016-09-01

    The photo conversion efficiencies of the 1st and 2nd generat ion photovoltaic solar cells are limited by the physical phenomena involved during the photo-conversion processes. An upper limit around 30% has been predicted for a monojunction silicon solar cell. In this work, we study 3rd generation solar cells named rectenna which could direct ly convert visible and infrared light into DC current. The rectenna technology is at odds with the actual photovoltaic technologies, since it is not based on the use of semi-conducting materials. We study a rectenna architecture consist ing of plasmonic nano-antennas associated with rectifying self assembled molecular diodes. We first opt imized the geometry of plasmonic nano-antennas using an FDTD method. The optimal antennas are then realized using a nano-imprint process and associated with self assembled molecular diodes in 11- ferrocenyl-undecanethiol. Finally, The I(V) characterist ics in darkness of the rectennas has been carried out using an STM. The molecular diodes exhibit averaged rect ification ratios of 5.

  17. Performance of refractory alloy-clad fuel pins

    International Nuclear Information System (INIS)

    Dutt, D.S.; Cox, C.M.; Millhollen, M.K.

    1984-12-01

    This paper discusses objectives and basic design of two fuel-cladding tests being conducted in support of SP-100 technology development. Two of the current space nuclear power concepts use conventional pin type designs, where a coolant removes the heat from the core and transports it to an out-of-core energy conversion system. An extensive irradiation testing program was conducted in the 1950's and 1960's to develop fuel pins for space nuclear reactors. The program emphasized refractory metal clad uranium nitride (UN), uranium carbide (UC), uranium oxide (UO 2 ), and metal matrix fuels (UCZr and BeO-UO 2 ). Based on this earlier work, studies presented here show that UN and UO 2 fuels in conjunction with several refractory metal cladding materials demonstrated high potential for meeting space reactor requirements and that UC could serve as an alternative but higher risk fuel

  18. Coaxial foilless diode

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng [College of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China)

    2014-05-15

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  19. Coaxial foilless diode

    Directory of Open Access Journals (Sweden)

    Long Kong

    2014-05-01

    Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  20. Cesium chemistry in GCFR fuel pins

    International Nuclear Information System (INIS)

    Fee, D.C.; Johnson, C.E.

    1979-01-01

    The fuel rod design for the Gas Cooled Fast-Breeder Reactor (GCFR) is similar to that employed for the Liquid Metal Fast Breeder Reactor (LMFBR) with the exception of the unique features inherent to the use of helium as the coolant. These unique design features include the use of (1) vented and pressure-equalized fuel rods, and (2) ribbed cladding along 75% of the fuel section. The former design feature enables reduction in cladding thickness and prevention of possible creep collapse of the cladding due to the high coolant pressure (8.5 MPa). The latter design feature brings about improved heat transfer characteristics. Each GCFR fuel rod is vented to a manifold whereby gaseous fission products diffusing out of the fuel pin are retained on charcoal traps. As a result, the internal pressure of a GCFR fuel pin does not increase during irradiation. In addition, the venting system also maintains the pressure within the fuel pin slightly below (0.3 to 0.5 MPa) the coolant pressure outside the fuel pin. Consequently, should a breach occur in the cladding, helium flows into the breached fuel pin thereby minimizing fission product contamination of the coolant. These desirable aspects of a GCFR fuel pin can be maintained only as long as axial gas transport paths are available and operating within the fuel pin

  1. Vortex lattice melting, pinning and kinetics

    International Nuclear Information System (INIS)

    Doniach, S.; Ryu, S.; Kapitulnik, A.

    1994-01-01

    The phenomenology of the high T c superconductors is discussed both at the level of the thermodynamics of melting of the Abrikosov flux lattice and in terms of the melting and kinetics of the flux lattice for a pinned system. The authors review results on 3D melting obtained by a Monte Carlo simulation approach in which the 2D open-quotes pancakeclose quotes vortices are treated as statistical variables. The authors discuss pinning in the context of the strong pinning regime in which the vortex density given in terms of the applied field B is small compared to that represented by an effective field B pin measuring the pinning center density. The authors introduce a new criterion for the unfreezing of a vortex glass on increase of magnetic field or temperature, in the strong pinning, small field unit. The authors model this limit in terms of a single flux line interacting with a columnar pin. This model is studied both analytically and by computer simulation. By applying a tilt potential, the authors study the kinetics of the vortex motion in an external current and show that the resulting current-voltage characteristic follows a basic vortex glass-like scaling relation in the vicinity of the depinning transition

  2. Quasi-CW Laser Diode Bar Life Tests

    Science.gov (United States)

    Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

    1997-01-01

    NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

  3. Computer simulation of vortex pinning in type II superconductors. II. Random point pins

    International Nuclear Information System (INIS)

    Brandt, E.H.

    1983-01-01

    Pinning of vortices in a type II superconductor by randomly positioned identical point pins is simulated using the two-dimensional method described in a previous paper (Part I). The system is characterized by the vortex and pin numbers (N/sub v/, N/sub p/), the vortex and pin interaction ranges (R/sub v/, R/sub p/), and the amplitude of the pin potential A/sub p/. The computation is performed for many cases: dilute or dense, sharp or soft, attractive or repulsive, weak or strong pins, and ideal or amorphous vortex lattice. The total pinning force F as a function of the mean vortex displacment X increases first linearly (over a distance usually much smaller than the vortex spacing and than R/sub p/) and then saturates, fluctuating about its averaging F-bar. We interpret F-bar as the maximum pinning force j/sub c/B of a large specimen. For weak pins the prediction of Larkin and Ovchinnikov for two-dimensional collective pinning is confirmed: F-bar = const. iW/R/sub p/c 66 , where W-bar is the mean square pinning force and c 66 is the shear modulus of the vortex lattice. If the initial vortex lattice is chosen highly defective (''amorphous'') the constant is 1.3--3 times larger than for the ideal triangular lattice. This finding may explain the often observed ''history effect.'' The function F-bar(A/sub p/) exhibits a jump, which for dilute, sharp, attractive pins occurs close to the ''threshold value'' predicted for isolated pins by Labusch. This jump reflects the onset of plastic deformation of the vortex lattice, and in some cases of vortex trapping, but is not a genuine threshold

  4. Electro-optical fuel pin identification system

    International Nuclear Information System (INIS)

    Kirchner, T.L.

    1978-09-01

    A prototype Electro-Optical Fuel Pin Identification System referred to as the Fuel Pin Identification System (FPIS) has been developed by the Hanford Engineering Development Laboratory (HEDL) in support of the Fast Flux Test Facility (FFTF) presently under construction at HEDL. The system is designed to remotely read an alpha-numeric identification number that is roll stamped on the top of the fuel pin end cap. The prototype FPIS consists of four major subassemblies: optical read head, digital compression electronics, video display, and line printer

  5. Flux pinning characteristics of YBCO coated conductor

    International Nuclear Information System (INIS)

    Matsushita, T.; Watanabe, T.; Fukumoto, Y.; Yamauchi, K.; Kiuchi, M.; Otabe, E.S.; Kiss, T.; Watanabe, T.; Miyata, S.; Ibi, A.; Muroga, T.; Yamada, Y.; Shiohara, Y.

    2005-01-01

    Flux pinning properties of PLD-processed YBCO coated conductors deposited on IBAD substrate are investigated. The thickness of YBCO layer is changed in the range of 0.27-1.0 μm. The thickness dependence of critical current density, n-value and irreversibility field are measured in a wide range of magnetic field. The results are compared with the theoretical flux creep-flow model. It is found that these pinning properties are strongly influenced by the thickness as well as the pinning strength. Optimum condition for high field application of this superconductor is discussed

  6. Pinning and creep in superconductors

    International Nuclear Information System (INIS)

    Ovchinnikov, Yu.N.

    1994-01-01

    All superconductors can be separated into two large groups: type I and type II. The behaviour of these two groups in a magnetic field is quite different. The superconductors of type I, in a strong magnetic field, enter the intermediate state. Phenomenological picture of this state was given by Landau. The type II superconductors, in strong magnetic fields, form the mixed state (or Shubnikov phase). The microscopic picture of the mixed state was given by Abrikosov on the basis of Ginzburg-Landau equations. In ideal homogeneous superconductors the free energy is not changed if all the vortex structure is shifted on some distance u. The transport current will be proportional, therefore, to the electric field E. All the real superconductors, however, are inhomogeneous. Inhomogeneities interact with vortex lattice and pin it. In this new state the transport current below some critical value does not lead to the motion of the flux lattice and to the energy dissipation. The value of critical current strongly depends on the type of inhomogeneities, on the value of magnetic field and on temperature. In new layered superconductors, the critical current depends also on the orientation of the magnetic field B with respect to the layer planes. Temperature and quantum fluctuations lead to the transition between different metastable states in superconductors with current. As a result, the vortex lattice slowly moves (creep phenomenon). Below we will briefly discuss all these phenomena. (orig.)

  7. Vortex diode jet

    Science.gov (United States)

    Houck, Edward D.

    1994-01-01

    A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.

  8. Compact CsI(Tl)-PIN detectors for nuclear physics applications

    International Nuclear Information System (INIS)

    Bhattacharjee, T.; Basu, S.K.; Bhattacharyya, S.; Chanda, S.; Chowdhury, A.; Mukhopadhyay, P.; Chatterjee, M.B.; Dey, C.C.; Mukherjee, Anjali

    2005-01-01

    Prototype detector elements, based on CsI(Tl) - Si PIN diodes, have been fabricated and optimized for use in a near 4p charged particle multiplicity filter array. The important aspects of fabrication of such compact detector elements along with the off-line and on-line performance test results will be reported. An early implementation of the proposed multiplicity filter array will be described. The planned use of the array in conjunction with the Indian National Gamma Array (INGA) as a reaction filter in high spin spectroscopic studies would be stressed. (author)

  9. Vortex pinning by point defect in superconductors

    International Nuclear Information System (INIS)

    Liao Hongyin; Zhou Shiping; Du Haochen

    2003-01-01

    We apply the periodic time-dependent Ginzburg-Landau model to study vortex distribution in type-II superconductors with a point-like defect and square pinning array. A defect site will pin vortices, and a periodic pinning array with right geometric parameters, which can be any form designed in advance, shapes the vortex pattern as external magnetic field varies. The maximum length over which an attractive interaction between a pinning centre and a vortex extends is estimated to be about 6.0ξ. We also derive spatial distribution expressions for the order parameter, vector potential, magnetic field and supercurrent induced by a point defect. Theoretical results and numerical simulations are compared with each other and they are consistent

  10. Pinning Synchronization of Switched Complex Dynamical Networks

    Directory of Open Access Journals (Sweden)

    Liming Du

    2015-01-01

    Full Text Available Network topology and node dynamics play a key role in forming synchronization of complex networks. Unfortunately there is no effective synchronization criterion for pinning synchronization of complex dynamical networks with switching topology. In this paper, pinning synchronization of complex dynamical networks with switching topology is studied. Two basic problems are considered: one is pinning synchronization of switched complex networks under arbitrary switching; the other is pinning synchronization of switched complex networks by design of switching when synchronization cannot achieved by using any individual connection topology alone. For the two problems, common Lyapunov function method and single Lyapunov function method are used respectively, some global synchronization criteria are proposed and the designed switching law is given. Finally, simulation results verify the validity of the results.

  11. Nuclear fuel pin controlled failure device

    International Nuclear Information System (INIS)

    Schlenker, L.D.

    1975-01-01

    Each fuel pin of a fuel assembly for a water-cooled nuclear reactor is provided with means for rupturing the cladding tube at a predetermined location if an abnormal increase in pressure of the gases present occurs due to a loss-of-coolant accident. Preferably all such rupture means are oriented to minimize the hydraulic resistance to the flow of emergency core coolant such as all rupture means pointing in the same direction. Rupture means may be disposed at different elevations in adjacent fuel pins and, further, fuel pins may be provided with two or more rupture means, one of which is in the upper portion of the fuel pin. Rupture means are mechanical as by providing a locally weakened condition of a controlled nature in the cladding. (U.S.)

  12. Ultrasonic inspections of fuel alignment pins

    International Nuclear Information System (INIS)

    Rathgeb, W.; Schmid, R.

    1994-01-01

    As a remedy to the practical problem of defects in fuel alignment pins made of Inconel X750, an inspection technique has been developed which fully meets the requirements of detecting defects. The newly used fuel alignment pins made of austenite are easy to test and therefore satisfy the necessity of further inspections.For the fuel alignment pins of the upper core structure a safe and fast inspection technique was made available. The inspection sensitivity is high and it is possible to give quantitative directions concerning defect orientation and depth. After the required inspections had been concluded in 1989, a total of 18 inspections were carried out in various national and international nuclear power plants in the following years. During this time more than 6000 fuel alignment pines were examined.For the fuel alignment pins the inspection technique provided could increase the understanding of the defect process. This technique contributed to the development of an adaptive and economical repair strategy. ((orig.))

  13. IMp: The customizable LEGO® Pinned Insect Manipulator

    Directory of Open Access Journals (Sweden)

    Steen Dupont

    2015-02-01

    Full Text Available We present a pinned insect manipulator (IMp constructed of LEGO® building bricks with two axes of movement and two axes of rotation. In addition we present three variants of the IMp to emphasise the modular design, which facilitates resizing to meet the full range of pinned insect specimens, is fully customizable, collapsible, affordable and does not require specialist tools or knowledge to assemble.

  14. IMp: The customizable LEGO® Pinned Insect Manipulator

    Science.gov (United States)

    Dupont, Steen; Price, Benjamin; Blagoderov, Vladimir

    2015-01-01

    Abstract We present a pinned insect manipulator (IMp) constructed of LEGO® building bricks with two axes of movement and two axes of rotation. In addition we present three variants of the IMp to emphasise the modular design, which facilitates resizing to meet the full range of pinned insect specimens, is fully customizable, collapsible, affordable and does not require specialist tools or knowledge to assemble. PMID:25685035

  15. Anisotropic flux pinning in high Tc superconductors

    International Nuclear Information System (INIS)

    Kolesnik, S.; Igalson, J.; Skoskiewicz, T.; Szymczak, R.; Baran, M.; Pytel, K.; Pytel, B.

    1995-01-01

    In this paper we present a comparison of the results of FC magnetization measurements on several Pb-Sr-(Y,Ca)-Cu-O crystals representing various levels of flux pinning. The pinning centers in our crystals have been set up during the crystal growth process or introduced by neutron irradiation. Some possible explanations of the observed effects, including surface barrier, flux-center distribution and sample-shape effects, are discussed. ((orig.))

  16. Investigation on macroscopic cross section model for BWR pin-by-pin core analysis - 118

    International Nuclear Information System (INIS)

    Fujita, T.; Tada, K.; Yamamoto, A.; Yamane, Y.; Kosaka, S.; Hirano, G.

    2010-01-01

    A cross section model used in the pin-by-pin core analysis for BWR is investigated. In the pin-by-pin core calculation method, pin-cell averaged cross sections are calculated for many combinations of state and history variables that have influences on the cross section and are tabulated prior to the core calculations. Variation of a cross section in a core simulator is classified into two different types, i.e., the instantaneous effect and the history effect. The instantaneous effect is incorporated by the variation of cross section which is caused by the instantaneous change of state variables. For this effect, the exposure, the void fraction, the fuel temperature, the moderator temperature and the control rod are used as indexes. The history effect is the cumulative effect of state variables. We treat this effect with a unified approach using the spectral history. To confirm accuracy of the cross section model, the pin-by-pin fission rate distribution and the k-infinity of fuel assembly which are obtained with the tabulated and the reference cross sections are compared. For the instantaneous effect, the present cross section model well reproduces the reference results for all off-nominal conditions. For the history effect, however, considerable differences both on the pin-by-pin fission rate distribution and the k-infinity are observed at high exposure points. (authors)

  17. A macroscopic cross-section model for BWR pin-by-pin core analysis

    International Nuclear Information System (INIS)

    Fujita, Tatsuya; Endo, Tomohiro; Yamamoto, Akio

    2014-01-01

    A macroscopic cross-section model used in boiling water reactor (BWR) pin-by-pin core analysis is studied. In the pin-by-pin core calculation method, pin-cell averaged cross sections are calculated for many combinations of core state and depletion history variables and are tabulated prior to core calculations. Variations of cross sections in a core simulator are caused by two different phenomena (i.e. instantaneous and history effects). We treat them through the core state variables and the exposure-averaged core state variables, respectively. Furthermore, the cross-term effect among the core state and the depletion history variables is considered. In order to confirm the calculation accuracy and discuss the treatment of the cross-term effect, the k-infinity and the pin-by-pin fission rate distributions in a single fuel assembly geometry are compared. Some cross-term effects could be negligible since the impacts of them are sufficiently small. However, the cross-term effects among the control rod history (or the void history) and other variables have large impacts; thus, the consideration of them is crucial. The present macroscopic cross-section model, which considers such dominant cross-term effects, well reproduces the reference results and can be a candidate in practical applications for BWR pin-by-pin core analysis on the normal operations. (author)

  18. Improved pinning by multiple in-line damage

    Energy Technology Data Exchange (ETDEWEB)

    Weinstein, Roy [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Sawh, Ravi-Persad [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Gandini, Alberto [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Parks, Drew [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States)

    2005-02-01

    Columnar pinning centres provide the largest pinning potential, U{sub pin}, but not the greatest J{sub c} or pinnable field, B{sub pin}. Characteristics of ion-generated columnar defects which limit J{sub c} and B{sub pin} are discussed, including reduction of the percolation path, and the need for a larger number of columns of damage, for pinning, than are usually estimated. It is concluded that columnar pinning centres limit B{sub pin} to less than 4 T, and also severely reduce J{sub c}. The goal of maximizing U{sub pin}, via columnar centres, appears to have obscured a more rewarding approach and resulted in neglect of a large regime of ion interactions. Evidence is reviewed that multiple in-line damage (MILD), described herein, can provide orders of magnitude higher J{sub c} and B{sub pin}, despite providing lower U{sub pin}. The MILD pinning centre morphology is discussed, and it is estimated that for present-day large grain high T{sub c} superconductors, a J{sub c} value of {approx}10{sup 6}Acm{sup -2} is obtainable at 77 K, even when crystal plane alignment and weak links are not improved. In addition, the pinned field is increased by over an order of magnitude. An experiment is proposed to confirm these calculations, directly compare MILD pinning to continuous columnar pinning, and determine the optimum MILD structure. Applications of MILD pinning are discussed.

  19. Experimental and numerical study of Bondura® 6.6 PIN joints

    Science.gov (United States)

    Berkani, I.; Karlsen, Ø.; Lemu, H. G.

    2017-12-01

    Pin joints are widely used in heavy-duty machinery such as aircrafts, cranes and offshore drilling equipment to transfer multi-dimensional shear forces. Their strength and service life depend on the clamping force in the contact region that is provided by interference fits. Though the interference fits provide full contact at the pin-hole interface under pretension loads, the contact interface reduces when the pin is subjected to an external load and hence a smaller contact surface leads to dramatic increase of the contact stress. The PIN joint of Bondura® Technology, investigated in this study, is an innovative solution intended to reduce the slack at the contact surface of the pin joint of heavy-duty machinery by using tapered sleeves on each end of the PIN. The study is aimed to better understand the contact pressure build-up and stress distribution in the supporting contact surface under pre-loading of the joint and the influence of temperature difference between part assembly and operation conditions. Numerical simulation using finite element method and diverse experimental tests were conducted. The numerical simulation and the test results, particularly the tests conducted with lubricated joints, show good conformance.

  20. Heterogeneous neutron-leakage model for PWR pin-by-pin calculation

    International Nuclear Information System (INIS)

    Li, Yunzhao; Zhang, Bin; Wu, Hongchun; Shen, Wei

    2017-01-01

    Highlights: •The derivation of the formula of the leakage model is introduced. This paper evaluates homogeneous and heterogeneous leakage models used in PWR pin-by-pin calculation. •The implements of homogeneous and heterogeneous leakage models used in pin-cell homogenization of the lattice calculation are studied. A consistent method of cooperation between the heterogeneous leakage model and the pin-cell homogenization theory is proposed. •Considering the computational cost, a new buckling search scheme is proposed to reach the convergence faster. The computational cost of the newly proposed neutron balance scheme is much less than the power-method scheme and the linear-interpolation scheme. -- Abstract: When assembly calculation is performed with the reflective boundary condition, a leakage model is usually required in the lattice code. The previous studies show that the homogeneous leakage model works effectively for the assembly homogenization. However, it becomes different and unsettled for the pin-cell homogenization. Thus, this paper evaluates homogeneous and heterogeneous leakage models used in pin-by-pin calculation. The implements of homogeneous and heterogeneous leakage models used in pin-cell homogenization of the lattice calculation are studied. A consistent method of cooperation between the heterogeneous leakage model and the pin-cell homogenization theory is proposed. Considering the computational cost, a new buckling search scheme is proposed to reach the convergence faster. For practical reactor-core applications, the diffusion coefficients determined by the transport cross-section or by the leakage model are compared with each other to determine which one is more accurate for the Pressurized Water Reactor pin-by-pin calculation. Numerical results have demonstrated that the heterogeneous leakage model together with the diffusion coefficient determined by the heterogeneous leakage model would have the higher accuracy. The new buckling search

  1. Fabrication of the instrumented fuel rods for the 3-Pin Fuel Test Loop at HANARO

    International Nuclear Information System (INIS)

    Sohn, Jae Min; Park, Sung Jae; Shin, Yoon Tag; Lee, Jong Min; Ahn, Sung Ho; Kim, Soo Sung; Kim, Bong Goo; Kim, Young Ki; Lee, Ki Hong; Kim, Kwan Hyun

    2008-09-01

    The 3-Pin Fuel Test Loop(hereinafter referred to as the '3-Pin FTL') facility has been installed at HANARO(High-flux Advanced Neutron Application Reactor) and the 3-Pin FTL is under a test operation. The purpose of this report is to fabricate the instrumented fuel rods for the 3-Pin FTL. The fabrication of these fuel rods was based on experiences and technologies of the instrumented fuel rods for an irradiation fuel capsule. The three instrumented fuel rods of the 3-Pin FTL have been designed. The one fuel rod(180 .deg. ) was designed to measure the centerline temperature of the nuclear fuels and the internal pressure of the fuel rod, and others(60 .deg. and 300 .deg. ) were designed to measure the centerline temperature of the fuel pellets. The claddings were made of the reference material 1 and 2 and new material 1 and 2. And nuclear fuel was used UO 2 (2.0w/o) pellet type with large grain and standard grain. The major procedures of fabrication are followings: (1) the assembling and weld of fuel rods with the pellet mockups and the sensor mockups for the qualification tests, (2) the qualification tests(dimension measurements, tensile tests, metallography examinations and helium leak tests) of weld, (3) the assembling and weld of instrumented fuel rods with the nuclear pellets and the sensors for the irradiation test, and (4) the qualification tests(the helium leak test, the dimensional measurement, electric resistance measurements of sensors) of test fuel rods. Satisfactory results were obtained for all the qualification tests of the instrumented fuel rods for the 3-Pin FTL. Therefore the three instrumented fuel rods for the 3-Pin FTL have been fabricated successfully. These will be installed in the In-Pile Section of 3-Pin FTL. And the irradiation test of these fuel rods is planned from the early next year for about 3 years at HANARO

  2. Evaluation of light-emitting diode beacon light fixtures.

    Science.gov (United States)

    2009-12-01

    Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

  3. Powerful infrared emitting diodes

    Directory of Open Access Journals (Sweden)

    Kogan L. M.

    2012-02-01

    Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

  4. Testing of the KRI-developed Silicon PIN Radioxenon Detector

    International Nuclear Information System (INIS)

    Foxe, Michael P.; McIntyre, Justin I.

    2015-01-01

    removal of plastics within the cell, which will need to be explored in future work. A third important parameter in choosing the best detection technique for radioxenon is the resolution of the electron detection. While the resolution is important in determining the minimum detectable concentration, it plays a larger role in source identification when there is a visible signal. The Silicon PIN diodes generated improved resolution over a similar plastic scintillator cell. With the improved resolution, it becomes easier to distinguish the radioxenon isomers ( 133m Xe and 131m Xe) from the 133 Xe beta continuum background. With the beta background from 133 Xe ever present with the detection of the isomers, the improved resolution proves vital in calculating the ratios of the three isotopes. With an accurate measurement of the isotopic ratios, the anthropogenic sources of radioxenon (medical isotope production and nuclear reactors) can be more accurately distinguished. Based on the results shown within this report, a Si PIN beta cell shows the potential to aid in the operation and discriminating power of the IMS for the CTBTO. However, there are a number of issues that need attention before a detector of this design would be reliable enough for field operations in the IMS. Issues that need develop include, but are not limited to: studying the robustness of the design in field conditions, eliminating or minimizing the noise and variability of individual Si detector elements, understanding the long-term gain stability of the Si detectors, and reducing the non-Si materials within the cell (i.e. the plastic housing).

  5. Whole-Pin Furnace system: An experimental facility for studying irradiated fuel pin behavior under potential reactor accident conditions

    International Nuclear Information System (INIS)

    Liu, Y.Y.; Tsai, H.C.; Donahue, D.A.; Pushis, D.O.; Savoie, F.E.; Holland, J.W.; Wright, A.E.; August, C.; Bailey, J.L.; Patterson, D.R.

    1990-05-01

    The whole-pin furnace system is a new in-cell experimental facility constructed to investigate how irradiated fuel pins may fail under potential reactor accident conditions. Extensive checkouts have demonstrated excellent performance in remote operation, temperature control, pin breach detection, and fission gas handling. The system is currently being used in testing of EBIR-II-irradiated Integral Fast Reactor (IFR) metal fuel pins; future testing will include EBR-II-irradiated mixed-oxide fuel pins. 7 refs., 4 figs

  6. French approach in fuel pin modelling for fast reactors

    Energy Technology Data Exchange (ETDEWEB)

    Pascard, R [CEA-Centre de Fontenay-aux-Roses, Fontenay-aux-Roses (France)

    1979-12-01

    The purpose of this paper is to present the general philosophy on the problem of fuel modelling now prevailing in France after a twelve years period of tremendously increasing knowledge on fuel behavior. When the Rapsodie fuel pin was designed in 1962 , little was known about the behavior of a mixed oxide fuel pin under fast flux ; but a large body of knowledge on UO{sub 2} behavior in thermal reactor was available together with some sparse irradiation results on (U Pu)O{sub 2} in French experimental reactors. The performances assigned to the pin were then rather modest in rating (400 w/cm) and in burnup (30,000 MWd/t). The AISI 316 steel in solution annealed state was chosen as cladding material. The clad itself was supposed to deform by thermal creep due to fission gas pressure (100% release), and was affected consequently by a strain limit criteria. The importance of clad temperature ({approx}650 deg.) was considered only in connection with thermal creep, the possibility of a chemical reaction between mixed oxide and clad being at that time hardly suspected. Rapsodie had only been at full power for a few months when appeared the evidence of stainless steel swelling under a fast neutrons flux. This swelling was observed on Rapsodie pins as soon as they experienced sufficient neutrons dose, roughly one year later. This entirely new problem came immediately in the front stage (and is still of major importance today), and was at the origin of the change from the Rapsodie to the Fortissimo core in order to accelerate materials testing versus void swelling by multiplying the flux by a factor two. Even with unforeseen swelling, the design of the Rapsodie and later on Fortissimo pin, allowed not only to reach the goal burnup, but to increase it steadily to roughly 100,000 MWd/t. Since then, the French approach in fuel pin design has still retained something of its original simplicity, and technological efficiency, attitude which is justified by the following

  7. Powering laser diode systems

    CERN Document Server

    Trestman, Grigoriy A

    2017-01-01

    This Tutorial Text discusses the competent design and skilled use of laser diode drivers (LDDs) and power supplies (PSs) for the electrical components of laser diode systems. It is intended to help power-electronic design engineers during the initial design stages: the choice of the best PS topology, the calculation of parameters and components of the PS circuit, and the computer simulation of the circuit. Readers who use laser diode systems for research, production, and other purposes will also benefit. The book will help readers avoid errors when creating laser systems from ready-made blocks, as well as understand the nature of the "mystical failures" of laser diodes (and possibly prevent them).

  8. Fabrication drawings of fuel pins for FUJI project among PSI, JNC and NRG. Revised version

    International Nuclear Information System (INIS)

    Ozawa, Takayuki; Nakazawa, Hiroaki; Abe, Tomoyuki; Nagayama, Masahiro

    2002-02-01

    Irradiation tests and post-irradiation examinations in the framework of JNC-PSI-NRG collaboration project will be performed in 2003-2005. Irradiation fuel pins will be fabricated by the middle of 2003. The fabrication procedure for irradiation fuel pins has been started in 2001. Several fabrication tests and qualification tests in JNC and PSI (Paul Scherrer Institute, Switzerland) have been performed before the fuel pin fabrication. According to the design assignment between PSI and JNC in the frame of this project, PSI should make a specification document for the fuel pellet, the sphere-pac fuel particles, the vipac fuel particles, and the fuel pin. JNC should make a fabrication drawing for irradiation pins. JNC has been performed the fuel design in cooperation with PSI and NRG (Nuclear Research and Consultancy Group, Netherlands). In this project, the pelletized fuel, the sphere-pac fuel, and the vipac fuel will be simultaneously irradiated on HFR (High Flux Reactor, Netherlands). This fabrication drawing has been made under the design assignment with PSI, and consists of the drawing of MOX pellet, thermal insulator pellet, pin components, fuel segments, and the constructed pin. The fabrication drawings were approved in October 2001, but after that, the optimization of specifications has been discussed and agreed among all partners. In this report, the revised fabrication drawings will be shown. Based on the commission of Plutonium Fuel Technology Group, Advanced Fuel Recycle Technology Division, this design work has been performed in Fuel Design and Evaluation Group, Plutonium Fuel Fabrication Division, Plutonium Fuel Center. (author)

  9. Statistics of dislocation pinning at localized obstacles

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, A. [S. N. Bose National Centre for Basic Sciences, Salt Lake, Kolkata 700098 (India); Bhattacharya, M., E-mail: mishreyee@vecc.gov.in; Barat, P. [Variable Energy Cyclotron Centre, 1/AF Bidhannagar, Kolkata 700064 (India)

    2014-10-14

    Pinning of dislocations at nanosized obstacles like precipitates, voids, and bubbles is a crucial mechanism in the context of phenomena like hardening and creep. The interaction between such an obstacle and a dislocation is often studied at fundamental level by means of analytical tools, atomistic simulations, and finite element methods. Nevertheless, the information extracted from such studies cannot be utilized to its maximum extent on account of insufficient information about the underlying statistics of this process comprising a large number of dislocations and obstacles in a system. Here, we propose a new statistical approach, where the statistics of pinning of dislocations by idealized spherical obstacles is explored by taking into account the generalized size-distribution of the obstacles along with the dislocation density within a three-dimensional framework. Starting with a minimal set of material parameters, the framework employs the method of geometrical statistics with a few simple assumptions compatible with the real physical scenario. The application of this approach, in combination with the knowledge of fundamental dislocation-obstacle interactions, has successfully been demonstrated for dislocation pinning at nanovoids in neutron irradiated type 316-stainless steel in regard to the non-conservative motion of dislocations. An interesting phenomenon of transition from rare pinning to multiple pinning regimes with increasing irradiation temperature is revealed.

  10. Pinning impulsive control algorithms for complex network

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Wen [School of Information and Mathematics, Yangtze University, Jingzhou 434023 (China); Lü, Jinhu [Academy of Mathematics and Systems Science, Chinese Academy of Sciences, Beijing 100190 (China); Chen, Shihua [College of Mathematics and Statistics, Wuhan University, Wuhan 430072 (China); Yu, Xinghuo [School of Electrical and Computer Engineering, RMIT University, Melbourne VIC 3001 (Australia)

    2014-03-15

    In this paper, we further investigate the synchronization of complex dynamical network via pinning control in which a selection of nodes are controlled at discrete times. Different from most existing work, the pinning control algorithms utilize only the impulsive signals at discrete time instants, which may greatly improve the communication channel efficiency and reduce control cost. Two classes of algorithms are designed, one for strongly connected complex network and another for non-strongly connected complex network. It is suggested that in the strongly connected network with suitable coupling strength, a single controller at any one of the network's nodes can always pin the network to its homogeneous solution. In the non-strongly connected case, the location and minimum number of nodes needed to pin the network are determined by the Frobenius normal form of the coupling matrix. In addition, the coupling matrix is not necessarily symmetric or irreducible. Illustrative examples are then given to validate the proposed pinning impulsive control algorithms.

  11. Radon measurements with a PIN photodiode

    International Nuclear Information System (INIS)

    Martin-Martin, A.; Gutierrez-Villanueva, J.L.; Munoz, J.M.; Garcia-Talavera, M.; Adamiec, G.; Iniguez, M.P.

    2006-01-01

    Silicon photodiodes are well suited to detect alphas coming from different sources as neutron reactions or radon daughters. In this work a radon in air detecting device, using an 18x18 mm silicon PIN photodiode is studied. The ionized airborne decay products formed during radon diffusion were focused by an accelerating high voltage to the PIN surface. Several conducting rings were disposed inside a cylindrical PVC vessel in such a way that they reproduced the electric field created by a punctual charge located behind PIN position. Alpha spectra coming from the neutral and ionized species deposited on the PIN surface, dominated by 218 Po and 214 Po progeny peaks, were recorded for varying conditions. Those include radon concentration from a Pylon source, high voltage (thousands of volts) and PIN inverse bias voltage. Different parameters such as temperature and humidity were also registered during data acquisition. The increase in the particle collection efficiency with respect to zero electric field was compared with the corresponding to a parallel plates configuration. A discussion is made in terms of the most appropriate voltages for different radon concentrations

  12. HLM fuel pin bundle experiments in the CIRCE pool facility

    Energy Technology Data Exchange (ETDEWEB)

    Martelli, Daniele, E-mail: daniele.martelli@ing.unipi.it [University of Pisa, Department of Civil and Industrial Engineering, Pisa (Italy); Forgione, Nicola [University of Pisa, Department of Civil and Industrial Engineering, Pisa (Italy); Di Piazza, Ivan; Tarantino, Mariano [Italian National Agency for New Technologies, Energy and Sustainable Economic Development, C.R. ENEA Brasimone (Italy)

    2015-10-15

    Highlights: • The experimental results represent the first set of values for LBE pool facility. • Heat transfer is investigated for a 37-pin electrical bundle cooled by LBE. • Experimental data are presented together with a detailed error analysis. • Nu is computed as a function of the Pe and compared with correlations. • Experimental Nu is about 25% lower than Nu derived from correlations. - Abstract: Since Lead-cooled Fast Reactors (LFR) have been conceptualized in the frame of GEN IV International Forum (GIF), great interest has focused on the development and testing of new technologies related to HLM nuclear reactors. In this frame the Integral Circulation Experiment (ICE) test section has been installed into the CIRCE pool facility and suitable experiments have been carried out aiming to fully investigate the heat transfer phenomena in grid spaced fuel pin bundles providing experimental data in support of European fast reactor development. In particular, the fuel pin bundle simulator (FPS) cooled by lead bismuth eutectic (LBE), has been conceived with a thermal power of about 1 MW and a uniform linear power up to 25 kW/m, relevant values for a LFR. It consists of 37 fuel pins (electrically simulated) placed on a hexagonal lattice with a pitch to diameter ratio of 1.8. The FPS was deeply instrumented by several thermocouples. In particular, two sections of the FPS were instrumented in order to evaluate the heat transfer coefficient along the bundle as well as the cladding temperature in different ranks of sub-channels. Nusselt number in the central sub-channel was therefore calculated as a function of the Peclet number and the obtained results were compared to Nusselt numbers obtained from convective heat transfer correlations available in literature on Heavy Liquid Metals (HLM). Results reported in the present work, represent the first set of experimental data concerning fuel pin bundle behaviour in a heavy liquid metal pool, both in forced and

  13. Magnetically insulated H- diodes

    International Nuclear Information System (INIS)

    Fisher, A.; Bystritskii, V.; Garate, E.; Prohaska, R.; Rostoker, N.

    1993-01-01

    At the Univ. of California, Irvine, the authors have been studying the production of intense H - beams using pulse power techniques for the past 7 years. Previously, current densities of H - ions for various diode designs at UCI have been a few A/cm 2 . Recently, they have developed diodes similar to the coaxial design of the Lebedev Physical Institute, Moscow, USSR, where current densities of up to 200 A/cm 2 were reported using nuclear activation of a carbon target. In experiments at UCI employing the coaxial diode, current densities of up to 35 A/cm 2 from a passive polyethylene cathode loaded with TiH 2 have been measured using a pinhole camera and CR-39 track recording plastic. The authors have also been working on a self-insulating, annular diode which can generate a directed beam of H - ions. In the annular diode experiments a plasma opening switch was used to provide a prepulse and a current path which self-insulated the diode. These experiments were done on the machine APEX, a 1 MV, 50 ns, 7 Ω pulseline with a unipolar negative prepulse of ∼ 100 kV and 400 ns duration. Currently, the authors are modifying the pulseline to include an external LC circuit which can generate a bipolar, 150 kV, 1 μs duration prepulse (similar prepulse characteristic as in the Lebedev Institute experiments cited above)

  14. Development of a fast pin-by-pin transport solver in ARCADIA registered

    International Nuclear Information System (INIS)

    Geemert, R. van

    2009-01-01

    For satisfaction of future global customer needs, dedicated efforts are being coordinated internationally and pursued continuously at AREVA NP. The currently ongoing CONVERGENCE project is committed to the development of the ARCADIA registered next generation core simulation software package. ARCADIA registered will be put to global use by all AREVA NP business regions, for the entire spectrum of core design processes, licensing computations and safety studies. As part of the currently ongoing trend towards more sophisticated neutronics methodologies, an SP 3 nodal transport concept (van Geemert 2008) has been developed for ARTEMIS (Hobson 2008) which is the steady-state and transient core simulation part of ARCADIA registered . For enabling a high computational performance, the SP 3 calculations are accelerated by applying multi-level coarse mesh rebalancing (van Geemert 2006). In the current implementation, SP 3 is typically about 1.4 times as expensive computationally as SP 1 (diffusion). The developed SP 3 solution concept is foreseen as the future computational workhorse for many-group 3D pin-by-pin full core computations by ARCADIA registered . With the entire numerical workload being highly parallelizable through domain decomposition techniques, associated CPU-time requirements that adhere to the efficiency needs in the nuclear industry can be expected to become feasible in the near future. The accuracy enhancement obtainable by using SP 3 instead of SP 1 has been verified by a detailed comparison of ARTEMIS 16-group pin-by-pin SP N results with KAERI's DeCart reference results (Kozlowski 2003) for the 2D pin-by-pin Purdue UO 2 /MOX benchmark. Within the associated pin-by-pin grid, large pin-to-pin variations in cross-section values occur due to the explicit modelling of guide tubes, gadolinium pins as well as the heterogeneous distribution of MOX assemblies and UO 2 assemblies featuring significantly different burnups. With a pin-by-pin grid as

  15. PINS Testing and Modification for Explosive Identification

    International Nuclear Information System (INIS)

    Seabury, E.H.; Caffrey, A.J.

    2011-01-01

    The INL's Portable Isotopic Neutron Spectroscopy System (PINS)1 non-intrusively identifies the chemical fill of munitions and sealed containers. PINS is used routinely by the U.S. Army, the Defense Threat Reduction Agency, and foreign military units to determine the contents of munitions and other containers suspected to contain explosives, smoke-generating chemicals, and chemical warfare agents such as mustard and nerve gas. The objects assayed with PINS range from softball-sized M139 chemical bomblets to 200 gallon DOT 500X ton containers. INL had previously examined2 the feasibility of using a similar system for the identification of explosives, and based on this proof-of-principle test, the development of a dedicated system for the identification of explosives in an improvised nuclear device appears entirely feasible. INL has been tasked by NNSA NA-42 Render Safe Research and Development with the development of such a system.

  16. Peripheral pin alignment system for fuel assemblies

    International Nuclear Information System (INIS)

    Anthony, A.J.

    1981-01-01

    An alignment system is provided for nuclear fuel assemblies in a nuclear core. The core support structure of the nuclear reactor includes upwardly pointing alignment pins arranged in a square grid and engage peripheral depressions formed in the lateral periphery of the lower ends of each of the fuel assemblies of the core. In a preferred embodiment, the depressions are located at the corners of the fuel assemblies so that each depression includes one-quarter of a cylindrical void. Accordingly, each fuel assembly is positioned and aligned by one-quarter of four separate alignment pins which engage the fuel assemblies at their lower exterior corners. (author)

  17. Pinning of fullerene lowest unoccupied molecular orbital edge at the interface with standing up copper phthalocyanine

    International Nuclear Information System (INIS)

    Wang, Chenggong; Irfan, Irfan; Turinske, Alexander J.; Gao, Yongli

    2012-01-01

    The electronic structure evolution of interfaces of fullerene (C 60 ) with copper phthalocyanine (CuPc) on highly oriented pyrolitic graphite (HOPG) and on native silicon oxide has been investigated with ultra-violet photoemission spectroscopy and inverse photoemission spectroscopy. The lowest unoccupied molecular orbital edge of C 60 was found to be pinned at the interface with CuPc on SiO 2 . A substantial difference in the electron affinity of CuPc on the two substrates was observed as the orientation of CuPc is lying flat on HOPG and standing up on SiO 2 . The ionization potential and electron affinity of C 60 were not affected by the orientation of CuPc due to the spherical symmetry of C 60 molecules. We observed band bending in C 60 on the standing-up orientation of CuPc molecules, while the energy levels of C 60 on the flat lying orientation of CuPc molecules were observed to be flat. - Highlights: ► Orientation of copper phthalocyanine (CuPc) on ordered graphite and silicon oxide. ► Pinning of lowest unoccupied molecular orbital edge of C60 to the Fermi level on CuPc. ► No C60 pinning or band bending was observed on flat laying CuPc. ► Results are useful for organic photovoltaic and organic light emitting diode research.

  18. Steady-state thermohydraulic studies in seven-pin bundle out-of-pile experiments: nominal and distorted geometry tests

    International Nuclear Information System (INIS)

    Falzetti, L.; Meneghello, S.; Pezzilli, M.

    1979-01-01

    Two sets of experiments have been performed in sodium with two seven pin electrically heated bundles: the first with a nominal arrangement, the second with one dummy pin enlarged 20% in diameter in peripheral position. In this paper a rapid review of experimental results and theoretical works, related to the temperature distribution in these geometries, is presented together with a short description of the developed test section technology

  19. Tapered leaf support pin for operating plant guide tubes

    International Nuclear Information System (INIS)

    Land, J.T.; Hopkins, R.J.; Ford, D.E.

    1991-01-01

    This patent describes a mounting system for removably mounting the lower flange of a control rod guide tube over an opening in the upper core plate of a nuclear reactor comprising at least one elongated support pin mounted on the guide tube lower flange and resiliently receivable in a bore formed in the upper core plate. It comprises a support pin having a longitudinal axis and comprising a first pin portion mountable on the guide tube lower flange, and a second pin portion receivable within the upper core plate bore, the second pin portion including a solid body section adjacent the first pin portion and having an outer diameter which is accommodated by the bore by a close clearance fit; locking means mounted on the first pin portion of the support pin for retaining the guide tube lower flange between the solid body section of the second pin portion and the locking means; and a washer disposed around the first pin portion between the locking means and the control rod guide tube flange, the washer and the locking means including mutually engaging rounded surfaces for eliminating bending moments and stresses on the support pin during mounting of the locking means on the first pin portion of the support pin

  20. Detection and dosimetry studies on the response of silicon diodes to an 241Am-Be source

    International Nuclear Information System (INIS)

    Lotfi, Y; Dizaji, H Zaki; Davani, F Abbasi

    2014-01-01

    Silicon diode detectors show potential for the development of an active personal dosimeter for neutron and photon radiation. Photons interact with the constituents of the diode detector and produce electrons. Fast neutrons interact with the constituents of the diode detector and converter, producing recoil nuclei and causing (n,α) and (n,p) reactions. These photon- and neutron-induced charged particles contribute to the response of diode detectors. In this work, a silicon pin diode was used as a detector to produce pulses created by photon and neutron. A polyethylene fast neutron converter was used as a recoil proton source in front of the detector. The total registered photon and neutron efficiency and the partial contributions of the efficiency, due to interactions with the diode and converter, were calculated. The results show that the efficiency of the converter-diode is a function of the incident photon and neutron energy. The optimized thicknesses of the converter for neutron detection and neutron dosimetry were found to be 1 mm and 0.1 mm respectively. The neutron records caused by the (n,α) and (n,p) reactions were negligible. The photon records were strongly dependent upon the energy and the depletion layer of the diode. The photons and neutrons efficiency of the diode-based dosimeter was calculated by the MCNPX code, and the results were in good agreement with experimental results for photons and neutrons from an 241 Am-Be source

  1. Cladding properties under simulated fuel pin transients

    International Nuclear Information System (INIS)

    Hunter, C.W.; Johnson, G.D.

    1975-01-01

    A description is given of the HEDL fuel pin testing program utilizing a recently developed Fuel Cladding Transient Tester (FCTT) to generate the requisite mechanical property information on irradiated and unirradiated fast reactor fuel cladding under temperature ramp conditions. The test procedure is described, and data are presented

  2. Turban pin aspiration: new fashion, new syndrome.

    Science.gov (United States)

    Ilan, Ophir; Eliashar, Ron; Hirshoren, Nir; Hamdan, Kasem; Gross, Menachem

    2012-04-01

    Turban pin aspiration syndrome is a new clinical entity afflicting young Islamic girls wearing a turban.The goal of this study was to present our experience in diagnosis and treatment of this new entity, define its clinical and epidemiologic features, and shed a new light on the role of fashion in the increased incidence. A retrospective study in a tertiary university hospital. Review of clinical parameters and epidemiologic features of 26 patients diagnosed with turban pin aspiration syndrome admitted to the Hadassah-Hebrew University Hospitals in Jerusalem from 1990 to 2010. All patients were Muslim females with an average age of 16 years. In all cases, the history was positive for accidental aspiration. Most of the pins were located in the trachea (42%). In 20 cases, the pins were extracted by rigid bronchoscopy without major complications. Fluoroscopy-assisted rigid bronchoscopy was used successfully in three cases. In one case, the object was self-ejected by coughing before the bronchoscopy, and two patients were referred to the chest unit for thoracotomy. Clinicians should be aware of this distinct form of foreign body aspiration, its method of diagnosis, and extraction techniques. A cultural investigation showed a difference in the turban-fastening technique of young girls as compared with their mothers. Removal by rigid bronchoscopy is a safe method with a high success rate and should be considered as the preferred extraction method of choice. Copyright © 2012 The American Laryngological, Rhinological, and Otological Society, Inc.

  3. Radiographic examination methods for fuel pins

    International Nuclear Information System (INIS)

    Smirnov, V.P.; Dvoretskii, V.G.

    1987-11-01

    To study the fast neutron reactor fuel pins structure the NIIAR Institute used x diffraction, neutronic radiography and autoradiographies. The two first methods are used for internal macrostructure studies, the third method for the plutonium and uranium radial distribution. These methods and the main results are indicated in this document [fr

  4. Physicist pins hopes on particle collider

    CERN Multimedia

    2007-01-01

    Physicist pins hopes on particle collider By Deseret Morning News Published: Monday, Dec. 31, 27 12:4 a.m. MST FONT Scott Thomas, a 187 State University graduate, is working at the frontiers of science. The theoretical physicist is crafting ways to extract fundamental secrets that seem certain to be uncovered by the Large Hadron Collider.

  5. Nanoscale coatings for erosion and corrosion protection of copper microchannel coolers for high powered laser diodes

    Science.gov (United States)

    Flannery, Matthew; Fan, Angie; Desai, Tapan G.

    2014-03-01

    High powered laser diodes are used in a wide variety of applications ranging from telecommunications to industrial applications. Copper microchannel coolers (MCCs) utilizing high velocity, de-ionized water coolant are used to maintain diode temperatures in the recommended range to produce stable optical power output and control output wavelength. However, aggressive erosion and corrosion attack from the coolant limits the lifetime of the cooler to only 6 months of operation. Currently, gold plating is the industry standard for corrosion and erosion protection in MCCs. However, this technique cannot perform a pin-hole free coating and furthermore cannot uniformly cover the complex geometries of current MCCs involving small diameter primary and secondary channels. Advanced Cooling Technologies, Inc., presents a corrosion and erosion resistant coating (ANCERTM) applied by a vapor phase deposition process for enhanced protection of MCCs. To optimize the coating formation and thickness, coated copper samples were tested in 0.125% NaCl solution and high purity de-ionized (DIW) flow loop. The effects of DIW flow rates and qualities on erosion and corrosion of the ANCERTM coated samples were evaluated in long-term erosion and corrosion testing. The robustness of the coating was also evaluated in thermal cycles between 30°C - 75°C. After 1000 hours flow testing and 30 thermal cycles, the ANCERTM coated copper MCCs showed a corrosion rate 100 times lower than the gold plated ones and furthermore were barely affected by flow rates or temperatures thus demonstrating superior corrosion and erosion protection and long term reliability.

  6. Light ion beam experiments with pinch reflex diodes on KfK's pulse generator KALIF

    International Nuclear Information System (INIS)

    Bluhm, H.; Buth, L.; Bohnel, K.; Harke, W.; Hoppe, P.; Karow, H.U.; Rusch, D.; Schulken, H.; Singer, J.

    1985-01-01

    The authors report on intense LI beam experiments currently performed with pinch reflex ion diodes on 2 ohms/1.4 TW-pulse generator KALIF (Karlsruhe Light Ion Facility). The goals of this work are the generation of highly focussed LI beams of well-defined ion composition, and the undertaking of beam-target experiments. The experimental studies with axial 6 cm phi-pinch reflex proton diodes have been aiming at the focussing characteristics of the diode, and at the ion species composition of the beam. Experiments have been performed using different diode geometries (anode/cathode/beam window foil shapes), and different anode return current paths, respectively. A variety of diagnostique techniques have been used in these studies: Electron pinch phenomena in the diode are observed by static and by gated X-ray cameras. Beam diagnostiques is based on measuring in the vacuum feed the electric parameters of the diode (electron and ion currents, diode voltage) on probing the ion composition and ion energy in the beam (by use of a Thomson Parabola spectrometer), and on the investigation of the beam focus (by use of different techniques: shadow box analysis, α-pin hole imaging, nuclear activation methods). Measurements of beam stopping power of ion beam-heated thin targets are underway using a streaked ion energy-spectrometer. The results obtained so far in these experimental efforts are presented

  7. Analytical method for reconstruction pin to pin of the nuclear power density distribution

    Energy Technology Data Exchange (ETDEWEB)

    Pessoa, Paulo O.; Silva, Fernando C.; Martinez, Aquilino S., E-mail: ppessoa@con.ufrj.br, E-mail: fernando@con.ufrj.br, E-mail: aquilino@imp.ufrj.br [Coordenacao dos Programas de Pos-Graduacao em Engenharia (COPPE/UFRJ), Rio de Janeiro, RJ (Brazil)

    2013-07-01

    An accurate and efficient method for reconstructing pin to pin of the nuclear power density distribution, involving the analytical solution of the diffusion equation for two-dimensional neutron energy groups in homogeneous nodes, is presented. The boundary conditions used for analytic as solution are the four currents or fluxes on the surface of the node, which are obtained by Nodal Expansion Method (known as NEM) and four fluxes at the vertices of a node calculated using the finite difference method. The analytical solution found is the homogeneous distribution of neutron flux. Detailed distributions pin to pin inside a fuel assembly are estimated by the product of homogeneous flux distribution by local heterogeneous form function. Furthermore, the form functions of flux and power are used. The results obtained with this method have a good accuracy when compared with reference values. (author)

  8. Analytical method for reconstruction pin to pin of the nuclear power density distribution

    International Nuclear Information System (INIS)

    Pessoa, Paulo O.; Silva, Fernando C.; Martinez, Aquilino S.

    2013-01-01

    An accurate and efficient method for reconstructing pin to pin of the nuclear power density distribution, involving the analytical solution of the diffusion equation for two-dimensional neutron energy groups in homogeneous nodes, is presented. The boundary conditions used for analytic as solution are the four currents or fluxes on the surface of the node, which are obtained by Nodal Expansion Method (known as NEM) and four fluxes at the vertices of a node calculated using the finite difference method. The analytical solution found is the homogeneous distribution of neutron flux. Detailed distributions pin to pin inside a fuel assembly are estimated by the product of homogeneous flux distribution by local heterogeneous form function. Furthermore, the form functions of flux and power are used. The results obtained with this method have a good accuracy when compared with reference values. (author)

  9. Pinning control of complex networked systems synchronization, consensus and flocking of networked systems via pinning

    CERN Document Server

    Su, Housheng

    2013-01-01

    Synchronization, consensus and flocking are ubiquitous requirements in networked systems. Pinning Control of Complex Networked Systems investigates these requirements by using the pinning control strategy, which aims to control the whole dynamical network with huge numbers of nodes by imposing controllers for only a fraction of the nodes. As the direct control of every node in a dynamical network with huge numbers of nodes might be impossible or unnecessary, it’s then very important to use the pinning control strategy for the synchronization of complex dynamical networks. The research on pinning control strategy in consensus and flocking of multi-agent systems can not only help us to better understand the mechanisms of natural collective phenomena, but also benefit applications in mobile sensor/robot networks. This book offers a valuable resource for researchers and engineers working in the fields of control theory and control engineering.   Housheng Su is an Associate Professor at the Department of Contro...

  10. PROCOPE, Collision Probability in Pin Clusters and Infinite Rod Lattices

    International Nuclear Information System (INIS)

    Amyot, L.; Daolio, C.; Benoist, P.

    1984-01-01

    1 - Nature of physical problem solved: Calculation of directional collision probabilities in pin clusters and infinite rod lattices. 2 - Method of solution: a) Gauss integration of analytical expressions for collision probabilities. b) alternately, an approximate closed expression (not involving integrals) may be used for pin-to-pin interactions. 3 - Restrictions on the complexity of the problem: number of fuel pins must be smaller than 62; maximum number of groups of symmetry is 300

  11. Further developments in NbTi superconductors with artificial pinning centers

    International Nuclear Information System (INIS)

    Kanithi, H.C.; Valaris, P.; Motowidlo, L.R.; Zeitlin, B.A.; Scanlan, R.M.

    1992-01-01

    Artificial pinning centers (APC) have been successfully incorporated in multifilamentary NbTi based superconductors. using pure niobium as the pinning material and applying state-of-the-art processing technology, we have developed conductors which exhibit record low-field current densities. Two volume fractions of Nb have been investigated. One of the objectives of the present development effort is the feasibility study of billet scale-up from earlier work. A J 3 (3T) of ∼7500 A/mm 2 , which is twice that of the present MRI conductors, and a J c (5T) of ∼3400 A/mm 2 , have been achieved in samples. The results of this ongoing effort, in terms of conductor configuration, microstructure, critical current density, and pinning force, are presented in this paper. Appropriate comparisons with past performances are made

  12. Advanced disassembling technique of irradiated driver fuel assembly for continuous irradiation of fuel pins

    International Nuclear Information System (INIS)

    Ichikawa, Shoichi; Haga, Hiroyuki; Katsuyama, Kozo; Maeda, Koji; Nishinoiri, Kenji

    2012-01-01

    It was necessary to carry out continuous irradiation tests in order to obtain the irradiation data of high burn-up fuel and high neutron dose material for FaCT (Fast Reactor Cycle Technology Development) project. There, the disassembling technique of an irradiated fuel assembly was advanced in order to realize further continuous irradiation tests. Although the conventional disassembling technique had been cutting a lower end-plug of a fuel pin needed to fix fuel pins to an irradiation vehicle, the advanced disassembling technique did not need cutting a lower end-plug. As a result, it was possible to supply many irradiated fuel pins to various continuous irradiation tests for FaCT project. (author)

  13. DFB laser diodes for sensing applications using photoacoustic spectroscopy

    International Nuclear Information System (INIS)

    Koeth, J; Fischer, M; Legge, M; Seufert, J; Roessner, K; Groninga, H

    2010-01-01

    We present typical device characteristics of novel DFB laser diodes which are employed in various sensing applications including high resolution photoacoustic spectroscopy. The laser diodes discussed are based on a genuine fabrication technology which allows for the production of ultra stable devices within a broad spectral range from 760 nm up to 3000 nm wavelength. The devices exhibit narrow linewidths down to <1 MHz which makes them ideally suited for all photoacoustic sensing applications where a high spectral purity is required. As an example we will focus on a typical medical application where these diodes are used for breath analysis using photoacoustic spectroscopy.

  14. Diode laser pumping

    International Nuclear Information System (INIS)

    Skagerlund, L.E.

    1975-01-01

    A diode laser is pumped or pulsed by a repeated capacitive discharge. A capacitor is periodically charged from a dc voltage source via a transformer, the capacitor being discharged through the diode laser via a controlled switching means after one or more charging periods. During a first interval of each charging period the transformer, while unloaded, stores a specific amount of energy supplied from the dc voltage source. During a subsequent interval of the charging period said specific amount of energy is transmitted from the transformer to the capacitor. The discharging of the capacitor takes place during a first interval of a charging period. (auth)

  15. Optimization study on pin tip diameter of an impact-pin nozzle at high pressure ratio

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, C. Palani; Lee, Kwon Hee [FMTRC, Daejoo Machinery Co. Ltd., Daegu (Korea, Republic of); Park, Tae Choon; Cha, Bong Jun [Engine Components Research Team, Korea Aerospace Research Institute, Daejeon (Korea, Republic of); Kim, Heuy Dong [Dept. of Mechanical Engineering, Andong National University, Andong (Korea, Republic of)

    2016-09-15

    Wet compression system is typically installed in a gas turbine engine to increase the net power output and efficiency. A crucial component of the wet compression system is the nozzle which generates fine water droplets for injection into the compressor. The main objective of present work is to optimize a kind of nozzle called impact-pin spray nozzle and thereby produce better quality droplets. To achieve this, the dynamics occurring in the water jet impinging on the pin tip, the subsequent formation of water sheet, which finally breaks into water droplets, must be studied. In this manuscript, the progress on the numerical studies on impact-pin nozzle are reported. A small computational domain covering the orifice, pin tip and the region where primary atomization occurs is selected for numerical analysis. The governing equations are selected in three dimensional cartesian form and simulations are performed to predict the dynamics of water jet impinging on the pin. Systematic studies were carried out and the results leading to the choice of turbulence model and the effect of pin tip diameter are reported here. Further studies are proposed to show the future directions of the present research work.

  16. A physico-genetic module for the polarisation of auxin efflux carriers PIN-FORMED (PIN)

    Science.gov (United States)

    Hernández-Hernández, Valeria; Barrio, Rafael A.; Benítez, Mariana; Nakayama, Naomi; Romero-Arias, José Roberto; Villarreal, Carlos

    2018-05-01

    Intracellular polarisation of auxin efflux carriers is crucial for understanding how auxin gradients form in plants. The polarisation dynamics of auxin efflux carriers PIN-FORMED (PIN) depends on both biomechanical forces as well as chemical, molecular and genetic factors. Biomechanical forces have shown to affect the localisation of PIN transporters to the plasma membrane. We propose a physico-genetic module of PIN polarisation that integrates biomechanical, molecular, and cellular processes as well as their non-linear interactions. The module was implemented as a discrete Boolean model and then approximated to a continuous dynamic system, in order to explore the relative contribution of the factors mediating PIN polarisation at the scale of single cell. Our models recovered qualitative behaviours that have been experimentally observed and enable us to predict that, in the context of PIN polarisation, the effects of the mechanical forces can predominate over the activity of molecular factors such as the GTPase ROP6 and the ROP-INTERACTIVE CRIB MOTIF-CONTAINING PROTEIN RIC1.

  17. Primary hip spica with crossed retrograde intramedullary rush pins ...

    African Journals Online (AJOL)

    Bursitis and penetration of pins at the site of Rush pin insertion is a complication associated with this method of treatment. Conclusion: Closed reduction and internal fixation with crossed Rush pins was a superior treatment method in terms of early weight bearing and restoration of normal anatomy. Keywords: Femoral ...

  18. Some aspects of continuum physics used in fuel pin modeling

    International Nuclear Information System (INIS)

    Bard, F.E.

    1975-06-01

    The mathematical formulation used in fuel pin modeling is described. Fuel pin modeling is not a simple extension of the experimental and interpretative methods used in classical mechanics. New concepts are needed to describe materials in a reactor environment. Some aspects of continuum physics used to develop these new constitutive equations for fuel pins are presented. (U.S.)

  19. Temperature and pinning strength dependence of the critical current of a superconductor with a square periodic array of pinning sites

    International Nuclear Information System (INIS)

    Benkraouda, M.; Obaidat, I.M.; Al Khawaja, U.

    2006-01-01

    We have conducted extensive series of molecular dynamic simulations on driven vortex lattices interacting with periodic square arrays of pinning sites. In solving the over damped equation of vortex motion we took into account the vortex-vortex repulsion interaction, the attractive vortex-pinning interaction, and the driving Lorentz force at several values of temperature. We have studied the effect of varying the driving Lorentz force and varying the pinning strength on the critical current for several pinning densities, and temperature values. We have found that the pinning strength play an important role in enhancing the critical current over the whole temperature range. At low temperatures, the critical current was found to increase linearly with increasing the pinning strengths for all pinning densities. As the temperature increases, the effect of small pinning strengths diminishes and becomes insignificant at high temperatures

  20. Fabrication drawings of fuel pins for FUJI project among PSI, JNC and NRG. Revised version 2

    International Nuclear Information System (INIS)

    Ozawa, Takayuki; Nakazawa, Hiroaki; Abe, Tomoyuki; Nagayama, Masahiro

    2002-10-01

    Irradiation tests and post-irradiation examinations in the framework of JNC-PSI-NRG collaboration project will be performed in 2003-2005. Irradiation fuel pins will be fabricated by the middle of 2003. The fabrication procedure for irradiation fuel pins has been started in 2001. Several fabrication tests and qualification tests in JNC and PSI (Paul Scherrer Institut, Switzerland) have been performed before the fuel pin fabrication. According to the design assignment between PSI and JNC in the frame of this project, PSI should make specification documents for the fuel pellet, the sphere-pac fuel particles, the vipac fuel fragments, and the fuel segment fabrication. JNC should make the fabrication drawings for irradiation pins. JNC has been performed the fuel design in cooperation with PSI and NRG (Nuclear Research and Consultancy Group, Holland). In this project, the pelletized fuel, the sphere-pac fuel, and the vipac fuel will be simultaneously irradiated on HFR (High Flux Reactor, Holland). The fabrication drawings have been made under the design assignment with PSI, and consist of the drawings of MOX pellet, thermal insulator pellet, pin components, fuel segments, and the constructed pin. The fabrication drawings were approved in October 2001, but after that, the optimization of specifications was discussed and agreed among all partners. According to this agreement, the fabrication drawings were revised in January 2002. After the earlier revision, the shape of particle retainer to be made by PSI was modified from its drawing beforehand delivered. In this report, the fabrication drawings revised again will be shown, and the fabrication procedure (welding Qualification Tests) will be modified in accordance with the result of discussion on the 3rd technical meeting held in September 2002. These design works have been performed in Fuel Design and Evaluation Group, Plutonium Fuel Fabrication Division, Plutonium Fuel Center under the commission of Plutonium Fuel

  1. Post-irradiation examination of a fuel pin using a microscopic X-ray system: Measurement of carbon deposition and pin metrology

    International Nuclear Information System (INIS)

    Gras, Ch.; Stanley, S.J.

    2008-01-01

    The paper presents some interesting aspects associated with X-ray imaging and its potential application in the nuclear industry. The feasibility of using X-ray technology for the post-irradiation examination of a fuel pin has been explored, more specifically pin metrology and carbon deposition measurement. The non-active sample was specially designed to mimic the structure of an AGR fuel pin whilst a carbon based material was applied to the mock up fuel rod in order to mimic carbon deposition. Short duration low energy (50 kV) 2D digital radiography was employed and provided encouraging results (with respect to carbon deposition thickness and structure measurements) for the mock up fuel pin with a spatial resolution of around 10 μm. Obtaining quantitative data from the resultant images is the principal added value associated with X-ray imaging. A higher intensity X-ray beam (≥90 kV) was also used in conjunction with the low energy set-up to produce a clear picture of the cladding as well as the interface between the lead (Pb mimics the uranium oxide) and stainless steel cladding. Spent fuel metrology and routine radiography are two additional tasks that X-ray imaging could perform for the post-irradiation examination programme. Therefore, when compared to other techniques developed to deliver information on one particular parameter, X-ray imaging offers the possibility to extract useful information on a range of parameters

  2. Control of domain wall pinning by localised focused Ga + ion irradiation on Au capped NiFe nanowires

    International Nuclear Information System (INIS)

    Burn, D. M.; Atkinson, D.

    2014-01-01

    Understanding domain wall pinning and propagation in nanowires are important for future spintronics and nanoparticle manipulation technologies. Here, the effects of microscopic local modification of the magnetic properties, induced by focused-ion-beam intermixing, in NiFe/Au bilayer nanowires on the pinning behavior of domain walls was investigated. The effects of irradiation dose and the length of the irradiated features were investigated experimentally. The results are considered in the context of detailed quasi-static micromagnetic simulations, where the ion-induced modification was represented as a local reduction of the saturation magnetization. Simulations show that domain wall pinning behavior depends on the magnitude of the magnetization change, the length of the modified region, and the domain wall structure. Comparative analysis indicates that reduced saturation magnetisation is not solely responsible for the experimentally observed pinning behavior.

  3. Diode lasers and arrays

    International Nuclear Information System (INIS)

    Streifer, W.

    1988-01-01

    This paper discusses the principles of operation of III-V semiconductor diode lasers, the use of distributed feedback, and high power laser arrays. The semiconductor laser is a robust, miniature, versatile device, which directly converts electricity to light with very high efficiency. Applications to pumping solid-state lasers and to fiber optic and point-to-point communications are reviewed

  4. Deep diode atomic battery

    International Nuclear Information System (INIS)

    Anthony, T.R.; Cline, H.E.

    1977-01-01

    A deep diode atomic battery is made from a bulk semiconductor crystal containing three-dimensional arrays of columnar and lamellar P-N junctions. The battery is powered by gamma rays and x-ray emission from a radioactive source embedded in the interior of the semiconductor crystal

  5. Infrared diode laser spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Civiš, Svatopluk; Cihelka, Jaroslav; Matulková, Irena

    2010-01-01

    Roč. 18, č. 4 (2010), s. 408-420 ISSN 1230-3402 R&D Projects: GA AV ČR IAA400400705 Institutional research plan: CEZ:AV0Z40400503 Keywords : FTIR spectroscopy * absorption spectroscopy * laser diodes Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.027, year: 2010

  6. Single pin BWR benchmark problem for coupled Monte Carlo - Thermal hydraulics analysis

    International Nuclear Information System (INIS)

    Ivanov, A.; Sanchez, V.; Hoogenboom, J. E.

    2012-01-01

    As part of the European NURISP research project, a single pin BWR benchmark problem was defined. The aim of this initiative is to test the coupling strategies between Monte Carlo and subchannel codes developed by different project participants. In this paper the results obtained by the Delft Univ. of Technology and Karlsruhe Inst. of Technology will be presented. The benchmark problem was simulated with the following coupled codes: TRIPOLI-SUBCHANFLOW, MCNP-FLICA, MCNP-SUBCHANFLOW, and KENO-SUBCHANFLOW. (authors)

  7. Single pin BWR benchmark problem for coupled Monte Carlo - Thermal hydraulics analysis

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, A.; Sanchez, V. [Karlsruhe Inst. of Technology, Inst. for Neutron Physics and Reactor Technology, Herman-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Hoogenboom, J. E. [Delft Univ. of Technology, Faculty of Applied Sciences, Mekelweg 15, 2629 JB Delft (Netherlands)

    2012-07-01

    As part of the European NURISP research project, a single pin BWR benchmark problem was defined. The aim of this initiative is to test the coupling strategies between Monte Carlo and subchannel codes developed by different project participants. In this paper the results obtained by the Delft Univ. of Technology and Karlsruhe Inst. of Technology will be presented. The benchmark problem was simulated with the following coupled codes: TRIPOLI-SUBCHANFLOW, MCNP-FLICA, MCNP-SUBCHANFLOW, and KENO-SUBCHANFLOW. (authors)

  8. An improved PIN photodetector with integrated JFET on high-resistivity silicon

    International Nuclear Information System (INIS)

    Dalla Betta, Gian-Franco; Piemonte, Claudio; Boscardin, Maurizio; Gregori, Paolo; Zorzi, Nicola; Fazzi, Alberto; Pignatel, Giorgio U.

    2006-01-01

    We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed

  9. Pinning impulsive synchronization of stochastic delayed coupled networks

    International Nuclear Information System (INIS)

    Tang Yang; Fang Jian-An; Wong W K; Miao Qing-Ying

    2011-01-01

    In this paper, the pinning synchronization problem of stochastic delayed complex network (SDCN) is investigated by using a novel hybrid pinning controller. The proposed hybrid pinning controller is composed of adaptive controller and impulsive controller, where the two controllers are both added to a fraction of nodes in the network. Using the Lyapunov stability theory and the novel hybrid pinning controller, some sufficient conditions are derived for the exponential synchronization of such dynamical networks in mean square. Two numerical simulation examples are provided to verify the effectiveness of the proposed approach. The simulation results show that the proposed control scheme has a fast convergence rate compared with the conventional adaptive pinning method. (general)

  10. Proto-I switching and diode studies

    International Nuclear Information System (INIS)

    Prestwich, K.R.; Miller, P.A.; McDaniel, D.H.; Poukey, J.W.; Widner, M.M.; Goldstein, S.A.

    1975-01-01

    Proto-I is a 3 MV, 800 kA, 24 ns electron beam accelerator that is under development at Sandia Laboratories. It represents an initial effort to develop a scalable technology that is applicable to accelerators for electron beam driven, inertial confinement fusion studies. Energy is supplied to each of the two diodes from six oil-dielectric Blumlein transmission lines (PFL) operating in parallel. A Marx generator charges three intermediate storage, water-dielectric capacitors which subsequently transfer the stored energy to the PFL. The discharge of the PFL is initiated by the simultaneous closure of 12 triggered oil-dielectric rail switches. Data will be presented on the operation of these multichannel switches. The two diodes have a common anode. Cathode diameters can be varied from 10 to 60 cm. Results of initial diode experiments and comparisons with theory are discussed. Plasma filled diode experiments are also reported, indicating pinch collapse velocities in excess of 10 9 cm/s

  11. The pin pixel detector--neutron imaging

    CERN Document Server

    Bateman, J E; Derbyshire, G E; Duxbury, D M; Marsh, A S; Rhodes, N J; Schooneveld, E M; Simmons, J E; Stephenson, R

    2002-01-01

    The development and testing of a neutron gas pixel detector intended for application in neutron diffraction studies is reported. Using standard electrical connector pins as point anodes, the detector is based on a commercial 100 pin connector block. A prototype detector of aperture 25.4 mmx25.4 mm has been fabricated, giving a pixel size of 2.54 mm which matches well to the spatial resolution typically required in a neutron diffractometer. A 2-Dimensional resistive divide readout system has been adapted to permit the imaging properties of the detector to be explored in advance of true pixel readout electronics. The timing properties of the device match well to the requirements of the ISIS-pulsed neutron source.

  12. Elementary pinning force for a superconducting vortex

    International Nuclear Information System (INIS)

    Hyun, O.B.; Finnemore, D.K.; Schwartzkopf, L.; Clem, J.R.

    1987-01-01

    The elementary pinning force f/sub p/ has been measured for a single vortex trapped in one of the superconducting layers of a cross-strip Josephson junction. At temperatures close to the transition temperature the vortex can be pushed across the junction by a transport current. The vortex is found to move in a small number of discrete steps before it exits the junction. The pinning force for each site is found to be asymmetric and to have a value of about 10/sup -6/ N/m at the reduced temperature, t = T/T/sub c/ = 0.95. As a function of temperature, f/sub p/ is found to vary approximately as (1-t)/sup 3/2/. .AE

  13. Top-nozzle mounted replacement guide pin assemblies

    International Nuclear Information System (INIS)

    Gilmore, C.B.; Andrews, W.H.

    1993-01-01

    A replacement guide pin assembly is provided for aligning a nuclear fuel assembly with an upper core plate of a nuclear reactor core. The guide pin assembly includes a guide pin body having a radially expandable base insertable within a hole in the top nozzle, a ferrule insertable within the guide pin base and capable of imparting a radially and outwardly directed force on the expandable base to expand it within the hole of the top nozzle and thereby secure the guide pin body to the top nozzle in response to a predetermined displacement of the ferrule relative to the guide pin body along its longitudinal axis, and a lock screw interfitted with the ferrule and threaded into the guide pin body so as to produce the predetermined displacement of the ferrule. (author)

  14. Timing analysis of PWR fuel pin failures

    International Nuclear Information System (INIS)

    Jones, K.R.; Wade, N.L.; Katsma, K.R.; Siefken, L.J.; Straka, M.

    1992-09-01

    Research has been conducted to develop and demonstrate a methodology for calculation of the time interval between receipt of the containment isolation signals and the first fuel pin failure for loss-of-coolant accidents (LOCAs). Demonstration calculations were performed for a Babcock and Wilcox (B ampersand W) design (Oconee) and a Westinghouse (W) four-loop design (Seabrook). Sensitivity studies were performed to assess the impacts of fuel pin bumup, axial peaking factor, break size, emergency core cooling system availability, and main coolant pump trip on these times. The analysis was performed using the following codes: FRAPCON-2, for the calculation of steady-state fuel behavior; SCDAP/RELAP5/MOD3 and TRACPF1/MOD1, for the calculation of the transient thermal-hydraulic conditions in the reactor system; and FRAP-T6, for the calculation of transient fuel behavior. In addition to the calculation of fuel pin failure timing, this analysis provides a comparison of the predicted results of SCDAP/RELAP5/MOD3 and TRAC-PFL/MOD1 for large-break LOCA analysis. Using SCDAP/RELAP5/MOD3 thermal-hydraulic data, the shortest time intervals calculated between initiation of containment isolation and fuel pin failure are 10.4 seconds and 19.1 seconds for the B ampersand W and W plants, respectively. Using data generated by TRAC-PF1/MOD1, the shortest intervals are 10.3 seconds and 29.1 seconds for the B ampersand W and W plants, respectively. These intervals are for a double-ended, offset-shear, cold leg break, using the technical specification maximum peaking factor and applied to fuel with maximum design bumup. Using peaking factors commensurate widi actual bumups would result in longer intervals for both reactor designs. This document also contains appendices A through J of this report

  15. Applicability of the diffusion and simplified P3 theories for BWR pin-by-pin core analysis

    International Nuclear Information System (INIS)

    Tada, Kenichi; Yamamoto, Akio; Kitamura, Yasunori; Yamane, Yoshihiro; Watanabe, Masato; Noda, Hiroshi

    2007-01-01

    The pin-by-pin fine mesh core calculation method is considered as a candidate of next-generation core calculation method for BWR. In this study, the diffusion and the simplified P 3 (SP 3 ) theories are applied to the pin-by-pin core analysis of BWR. Performances of the diffusion and the SP 3 theories for cell-homogeneous pin-by-pin fine mesh BWR core analysis are evaluated through comparison with cell-heterogeneous detailed transport calculation by the method of characteristics (MOC). In this study, two-dimensional, 2x2 multi-assemblies geometry is used to compare the prediction accuracies of the diffusion and the SP 3 theories. The 2x2 multi- assemblies geometry consists of two types of 9x9 UO 2 assembly that have two different enrichment splittings. To mitigate the cell-homogenization error, the SPH method is applied for the pin-by-pin fine mesh calculation. The SPH method is a technique that reproduces a result of heterogeneous calculation by that of homogeneous calculation. The calculation results indicated that diffusion theory shows larger discrepancy than that of SP 3 theory on pin-wise fission rates. Furthermore, the accuracy of the diffusion theory would not be sufficient for the pin-by-pin fine mesh calculation. In contrast to the diffusion theory, the SP 3 theory shows much better accuracy on pin wise fission rates. Therefore, if the SP 3 theory is applied, the accuracy of the pin-by-pin fine mesh BWR core analysis will be higher and will be sufficient for production calculation. (author)

  16. Active graphene-silicon hybrid diode for terahertz waves.

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-11

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  17. Diode pumped solid state laser by two diodes

    International Nuclear Information System (INIS)

    Li Mingzhong; Zhang Xiaomin; Liang Yue; Man Yongzai; Zhou Pizhang

    1995-01-01

    A Nd: YLF laser is pumped by home-made quantum well diode lasers. Datum of laser output energy 60 μJ and peak power 120 mw are observed at wavelength 1.047 μm. On the same pumping condition, the output power synchronously pumped by two diodes is higher than the total output power pumped by two diodes separately. The fluctuation is <3%. The results agree with theoretical analysis

  18. A final report for Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

    CERN Document Server

    Vernon, S M

    1999-01-01

    This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of Al sub x Ga sub 1 sub - sub x As. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10 sup - sup 1 sup 2 amps at -1 V o...

  19. Highly Efficient p-i-n Type Organic Light-emitting Diodes Using ...

    African Journals Online (AJOL)

    operating voltage of 3.0 V. In addition, impressive characteristics of white .... low voltage drops in the transport layers due to their ... thermal evaporation in high vacuum or organic vapor ... the calibrated silicon photodiode above the OLEDs.

  20. Highly Efficient p-i-n Type Organic Light-emitting Diodes Using ...

    African Journals Online (AJOL)

    Both predominantly hole transporting material (TCTA) and an exclusively electron transporting host material (TAZ) are doped with the green phosphorescent dye tris(phenylpyridine)iridium [Ir(ppy)3]. The intrinsic and doped transport and emission layers are formed using a high vacuum controlled co-evaporation deposition ...

  1. Characterisation of different hole transport materials as used in organic p-i-n solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Pfuetzner, Steffen; Petrich, Annette; Koch, Maik; Riede, Moritz; Leo, Karl [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden (Germany); Malbrich, Christine [Leibniz-Institut fuer Festkoerper- und Werkstoffforschung, Dresden (Germany); Hildebrandt, Dirk; Pfeiffer, Martin [Heliatek GmbH, Dresden (Germany)

    2008-07-01

    This work focuses on the replacement of hole transport material MeO-TPD, which has been used so far in organic p-i-n- solar cells despite its has unfavourable behaviour at elevated temperatures. For this reason, different characterisation and investigations of the hole transport materials PV-TPD, PV-TPDoM, Di-NPB and MeO-Spiro-TPD were done, i.e. dopability, hole mobility, absorption, reflection, cyclic voltametry and glass transition temperature were measured. With simplified structures, e.g. m-i-p diodes, and simplified solar cells, consisting of the blue absorbing fullerene C{sub 60} as acceptor and the transparent donor material 4P-TPD, further specific material properties were determined.

  2. Efficient organic light emitting-diodes (OLEDs)

    CERN Document Server

    Chang, Yi-Lu

    2015-01-01

    Following two decades of intense research globally, the organic light-emitting diode (OLED) has steadily emerged as the ultimate display technology of choice for the coming decades. Portable active matrix OLED displays have already become prevalent, and even large-sized ultra-high definition 4K TVs are being mass-produced. More exotic applications such as wearable displays have been commercialized recently. With the burgeoning success in displays, researchers are actively bringing the technology forward into the exciting solid-state lighting market. This book presents the knowledge needed for

  3. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  4. A proposed parameterization of interface discontinuity factors depending on neighborhood for pin-by-pin diffusion computations for LWR

    International Nuclear Information System (INIS)

    Herrero, Jose Javier; Garcia-Herranz, Nuria; Ahnert, Carol

    2011-01-01

    There exists an interest in performing full core pin-by-pin computations for present nuclear reactors. In such type of problems the use of a transport approximation like the diffusion equation requires the introduction of correction parameters. Interface discontinuity factors can improve the diffusion solution to nearly reproduce a transport solution. Nevertheless, calculating accurate pin-by-pin IDF requires the knowledge of the heterogeneous neutron flux distribution, which depends on the boundary conditions of the pin-cell as well as the local variables along the nuclear reactor operation. As a consequence, it is impractical to compute them for each possible configuration. An alternative to generate accurate pin-by-pin interface discontinuity factors is to calculate reference values using zero-net-current boundary conditions and to synthesize afterwards their dependencies on the main neighborhood variables. In such way the factors can be accurately computed during fine-mesh diffusion calculations by correcting the reference values as a function of the actual environment of the pin-cell in the core. In this paper we propose a parameterization of the pin-by-pin interface discontinuity factors allowing the implementation of a cross sections library able to treat the neighborhood effect. First results are presented for typical PWR configurations. (author)

  5. A proposed parameterization of interface discontinuity factors depending on neighborhood for pin-by-pin diffusion computations for LWR

    Energy Technology Data Exchange (ETDEWEB)

    Herrero, Jose Javier; Garcia-Herranz, Nuria; Ahnert, Carol, E-mail: herrero@din.upm.es, E-mail: nuria@din.upm.es, E-mail: carol@din.upm.es [Departamento de Ingenieria Nuclear, Universidad Politecnica de Madrid (Spain)

    2011-07-01

    There exists an interest in performing full core pin-by-pin computations for present nuclear reactors. In such type of problems the use of a transport approximation like the diffusion equation requires the introduction of correction parameters. Interface discontinuity factors can improve the diffusion solution to nearly reproduce a transport solution. Nevertheless, calculating accurate pin-by-pin IDF requires the knowledge of the heterogeneous neutron flux distribution, which depends on the boundary conditions of the pin-cell as well as the local variables along the nuclear reactor operation. As a consequence, it is impractical to compute them for each possible configuration. An alternative to generate accurate pin-by-pin interface discontinuity factors is to calculate reference values using zero-net-current boundary conditions and to synthesize afterwards their dependencies on the main neighborhood variables. In such way the factors can be accurately computed during fine-mesh diffusion calculations by correcting the reference values as a function of the actual environment of the pin-cell in the core. In this paper we propose a parameterization of the pin-by-pin interface discontinuity factors allowing the implementation of a cross sections library able to treat the neighborhood effect. First results are presented for typical PWR configurations. (author)

  6. Genome-wide identification and evolution of the PIN-FORMED (PIN) gene family in Glycine max.

    Science.gov (United States)

    Liu, Yuan; Wei, Haichao

    2017-07-01

    Soybean (Glycine max) is one of the most important crop plants. Wild and cultivated soybean varieties have significant differences worth further investigation, such as plant morphology, seed size, and seed coat development; these characters may be related to auxin biology. The PIN gene family encodes essential transport proteins in cell-to-cell auxin transport, but little research on soybean PIN genes (GmPIN genes) has been done, especially with respect to the evolution and differences between wild and cultivated soybean. In this study, we retrieved 23 GmPIN genes from the latest updated G. max genome database; six GmPIN protein sequences were changed compared with the previous database. Based on the Plant Genome Duplication Database, 18 GmPIN genes have been involved in segment duplication. Three pairs of GmPIN genes arose after the second soybean genome duplication, and six occurred after the first genome duplication. The duplicated GmPIN genes retained similar expression patterns. All the duplicated GmPIN genes experienced purifying selection (K a /K s genome sequence of 17 wild and 14 cultivated soybean varieties. Our research provides useful and comprehensive basic information for understanding GmPIN genes.

  7. Robustness of pinning a general complex dynamical network

    International Nuclear Information System (INIS)

    Wang Lei; Sun Youxian

    2010-01-01

    This Letter studies the robustness problem of pinning a general complex dynamical network toward an assigned synchronous evolution. Several synchronization criteria are presented to guarantee the convergence of the pinning process locally and globally by construction of Lyapunov functions. In particular, if a pinning strategy has been designed for synchronization of a given complex dynamical network, then no matter what uncertainties occur among the pinned nodes, synchronization can still be guaranteed through the pinning. The analytical results show that pinning control has a certain robustness against perturbations on network architecture: adding, deleting and changing the weights of edges. Numerical simulations illustrated by scale-free complex networks verify the theoretical results above-acquired.

  8. Is magnetic pinning a dominant mechanism in Nb-Ti

    International Nuclear Information System (INIS)

    Cooley, L.D.; Lee, P.J.; Larbalestier, D.C.

    1991-01-01

    In this paper, the authors compare the pinning behavior of an artificial pinning center (APC) composite and a nanometer-filament Nb 46.5 wt% Ti composite to that of a conventional Nb 48 wt% Ti composite. The microstructure of the APC composite resembles the conventional composite, where ribbons of normal metal form the pinning centers, whereas the nanometer-filament composite has no internal normal metal but pins instead at the filament surface. The APC composite exhibits much stronger pinning relative to B c 2 than the conventional composite (21.4 GN/m 3 , 7 T vs. 18.9 GN/m 3 , 11 T), which is possibly due to the increased amount of pinning center (50 vol.% vs. 25 vol.%), however the proximity effect reduces the B c 2 unfavorably

  9. Ferromagnetic artificial pinning centers in multifilamentary superconducting wires

    International Nuclear Information System (INIS)

    Wang, J.Q.; Rizzo, N.D.; Prober, D.E.

    1997-01-01

    The authors fabricated multifilamentary NbTi wires with ferromagnetic (FM) artificial pinning centers (APCs) to enhance the critical current density (J c ) in magnetic fields. They used a bundle and draw technique to process the APC wires with either Ni or Fe as the pinning centers. Both wires produced higher J c in the high field range (5-9 T) than previous non-magnetic APC wires similarly processed, even though the authors have not yet optimized pin percentage. Using a magnetometer they found that the pins remained ferromagnetic for the wires with maximum J c . However, they did observe a substantial loss of FM material for the wires where the pin diameter approached 3 nm. Thus, they expect further enhancement of J c with better pin quality

  10. Correlation of creep and swelling with fuel pin performance

    International Nuclear Information System (INIS)

    Jackson, R.J.; Washburn, D.F.; Garner, F.A.; Gilbert, E.R.

    1975-09-01

    The HEDL PNL-11 experiment described was one in a series of fueled subassemblies irradiated in EBR-II to demonstrate the adequacy of the FFTF fuel pin design. The cladding material, dimensions, and fuel density are prototypic of FFTF. Because neutron flux in EBR-II is lower than in FFTF, the uranium enrichment is higher in these experimental fuel pins, irradiated in EBR-II, than the FFTF enrichment for comparable linear heat rates. Some pertinent oprating conditions for the center fuel pin in this experiment are listed. This 37-pin subassembly represents, at 110,000 MWd/MTM, the highest burnup yet attained by a prototypic FFTF subassembly. Similarly, this is the highest fluence presently attained by prototypic fuel pins. A cladding breach occurred in one fuel pin which is presently being examined. Results are presented and discussed

  11. Analysis of three idealized reactor configurations: plate, pin, and homogeneous

    International Nuclear Information System (INIS)

    McKnight, R.D.

    1983-01-01

    Detailed Monte Carlo calculations have been performed for three distinct configurations of an idealized fast critical assembly. This idealized assembly was based on the LMFBR benchmark critical assembly ZPR-6/7. In the first configuration, the entire core was loaded with the plate unit cell of ZPR-6/7. In the second configuration, the entire core was loaded with the ZPR sodium-filled pin calandria. The actual ZPR pin calandria are loaded with mixed (U,Pu) oxide pins which closely match the composition of the ZPR-6/7 plate unit cell. For the present study, slight adjustments were made in the atom concentrations and the length of the pin calandria in order to make the core boundaries and average composition for the pin-cell configuration identical to those of the plate-cell configuration. In the third configuration, the core was homogeneous, again with identical core boundaries and average composition as the plate and pin configurations

  12. Analytic models for fuel pin transient performance

    International Nuclear Information System (INIS)

    Bard, F.E.; Fox, G.L.; Washburn, D.F.; Hanson, J.E.

    1976-09-01

    HEDL's ability to analyze various mechanisms that operate within a fuel pin has progressed substantially through development of codes such as PECTCLAD, which solves cladding response, and DSTRESS, which solves fuel response. The PECTCLAD results show good correlation with a variety of mechanical tests on cladding material and also demonstrate the significance of cladding strength when applying the life fraction rule. The DSTRESS results have shown that fuel deforms sufficiently during overpower transient tests that available volumes are filled, whether in the form of a central cavity or start-up cracks

  13. Optimum Prestress of Tanks with Pinned Base

    DEFF Research Database (Denmark)

    Brøndum-Nielsen, Troels

    1998-01-01

    Amin Ghali and Eleanor Elliott presented in their paper an interesting suggestion for prestressing of circular tanks without sliding joints. For many prestressed tanks the following construction procedure is adopted:In order to ensure compressive hoop forces in the wall near the base, the wall...... is allowed to slide freely in the radial direction during tensioning (free base).After tensioning such displacements are prevented (pinned base). The present paper addresses the problem of prestress of such tanks.Keywords: circular prestressing; creep properties; prestressed concrete; redistribution...

  14. On the obstructions to non-Cliffordian pin structures

    Energy Technology Data Exchange (ETDEWEB)

    Chamblin, A. (Dept. of Applied Maths and Theoretical Physics, Univ. of Cambridge (United Kingdom))

    1994-07-01

    We derive the topological obstructions to the existence of non-Cliffordian pin structures on four-dimensional spacetimes. We apply these obstructions to the study of non-Cliffordian pin-Lorentz cobordism. We note that our method of derivation applies equally well in any dimension and in any signature, and we present a general format for calculating obstructions in these situations. Finally, we interpret the breakdown of pin structure and discuss the relevance of this to aspects of physics. (orig.)

  15. Sodium erosion of boron carbide from breached absorber pins

    International Nuclear Information System (INIS)

    Basmajian, J.A.; Baker, D.E.

    1981-03-01

    The purpose of the irradiation experiment was to provide an engineering demonstration of the irradiation behavior of breached boron carbide absorber pins. By building defects into the cladding of prototypic absorber pins, and performing the irradiation under typical FFTF operating conditions, a qualitative assessment of the consequences of a breach was achieved. Additionally, a direct comparison of pin behavior with that of the ex-reactor test could be made

  16. Bactericidal micron-thin sol-gel films prevent pin tract and periprosthetic infection.

    Science.gov (United States)

    Qu, Haibo; Knabe, Christine; Burke, Megan; Radin, Shula; Garino, Jonathan; Schaer, Thomas; Ducheyne, Paul

    2014-08-01

    Orthopedic injuries constitute the majority of wounds sustained by U.S. soldiers in recent conflicts. The risk of infection is considerable with fracture fixation devices. In this pilot study, we examined the use of unique bactericidal micron-thin sol-gel films on fracture fixation devices and their ability to prevent and eradicate infections. External fixation was studied with micron-thin sol-gel coated percutaneous pins releasing triclosan and inserted medially into rabbit tibiae. A total of 11 rabbits received percutaneous pins that were either uncoated or sol-gel/triclosan coated. Internal fracture fixation was also studied using sol-gel coated intramedullary (IM) nails releasing vancomycin in the intramedullary tibiae. Six sheep received IM nails that were coated with a sol-gel film that either contained vancomycin or did not contain vancomycin. All animals were challenged with Staphylococcus aureus around the implant. Animals were euthanized at 1 month postoperative. Rabbits receiving triclosan/sol-gel coated percutaneous pins did not show signs of infection. Uncoated percutaneous pins had a significantly higher infection rate. In the sheep study, there were no radiographic signs of osteomyelitis with vancomycin/sol-gel coated IM nails, in contrast to the observations in the control cohort. Hence, the nanostructured sol-gel controlled release technology offers the promise of a reliable and continuous delivery system of bactericidals from orthopedic devices to prevent and treat infection. Reprint & Copyright © 2014 Association of Military Surgeons of the U.S.

  17. WWER-440 fuel rod performance analysis with PIN-Micro and TRANSURANUS codes

    International Nuclear Information System (INIS)

    Vitkova, M.; Manolova, M.; Stefanova, S.; Simeonova, V.; Passage, G.; Lassmann, K.

    1994-01-01

    PIN-micro and TRANSURANUS codes were used to analyse the WWER-440 fuel rod behaviour at normal operation conditions. Two highest loaded fuel rods of the fuel assemblies irradiated in WWER-440 with different power histories were selected. A set of the most probable average values of all geometrical and technological parameters were used. A comparison between PIN-micro and TRANSURANUS codes was performed using identical input data. The results for inner gas pressure, gap size, local linear heat rate, fuel central temperature and fission gas release as a function of time calculated for the selected fuel rods are presented. The following conclusions were drawn: 1) The PIN-micro code predicts adequately the thermal and mechanical behaviour of the two fuel rods; 2) The comparison of the results obtained by PIN-micro and TRANSURANUS shows a reasonable agreement and the discrepancies could be explained by the lack of thoroughly WWER oriented verification of TRANSURANUS; 3) The advanced TRANSURANUS code could be successfully applied for WWER fuel rod thermal and mechanical analysis after incorporation of all necessary WWER specific material properties and models for the Zr+1%Nb cladding, for the fuel rod as a whole and after validation against WWER experimental and operational data. 1 tab., 10 figs., 10 refs

  18. WWER-440 fuel rod performance analysis with PIN-Micro and TRANSURANUS codes

    Energy Technology Data Exchange (ETDEWEB)

    Vitkova, M; Manolova, M; Stefanova, S; Simeonova, V; Passage, G [Bylgarska Akademiya na Naukite, Sofia (Bulgaria). Inst. za Yadrena Izsledvaniya i Yadrena Energetika; Kharalampieva, Ts [Kombinat Atomna Energetika, Kozloduj (Bulgaria); Lassmann, K [European Atomic Energy Community, Karlsruhe (Germany). European Inst. for Transuranium Elements

    1994-12-31

    PIN-micro and TRANSURANUS codes were used to analyse the WWER-440 fuel rod behaviour at normal operation conditions. Two highest loaded fuel rods of the fuel assemblies irradiated in WWER-440 with different power histories were selected. A set of the most probable average values of all geometrical and technological parameters were used. A comparison between PIN-micro and TRANSURANUS codes was performed using identical input data. The results for inner gas pressure, gap size, local linear heat rate, fuel central temperature and fission gas release as a function of time calculated for the selected fuel rods are presented. The following conclusions were drawn: (1) The PIN-micro code predicts adequately the thermal and mechanical behaviour of the two fuel rods; (2) The comparison of the results obtained by PIN-micro and TRANSURANUS shows a reasonable agreement and the discrepancies could be explained by the lack of thoroughly WWER oriented verification of TRANSURANUS; (3) The advanced TRANSURANUS code could be successfully applied for WWER fuel rod thermal and mechanical analysis after incorporation of all necessary WWER specific material properties and models for the Zr+1%Nb cladding, for the fuel rod as a whole and after validation against WWER experimental and operational data. 1 tab., 10 figs., 10 refs.

  19. CMOS Imaging of Pin-Printed Xerogel-Based Luminescent Sensor Microarrays.

    Science.gov (United States)

    Yao, Lei; Yung, Ka Yi; Khan, Rifat; Chodavarapu, Vamsy P; Bright, Frank V

    2010-12-01

    We present the design and implementation of a luminescence-based miniaturized multisensor system using pin-printed xerogel materials which act as host media for chemical recognition elements. We developed a CMOS imager integrated circuit (IC) to image the luminescence response of the xerogel-based sensor array. The imager IC uses a 26 × 20 (520 elements) array of active pixel sensors and each active pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. The imager includes a correlated double sampling circuit and pixel address/digital control circuit; the image data is read-out as coded serial signal. The sensor system uses a light-emitting diode (LED) to excite the target analyte responsive luminophores doped within discrete xerogel-based sensor elements. As a prototype, we developed a 4 × 4 (16 elements) array of oxygen (O 2 ) sensors. Each group of 4 sensor elements in the array (arranged in a row) is designed to provide a different and specific sensitivity to the target gaseous O 2 concentration. This property of multiple sensitivities is achieved by using a strategic mix of two oxygen sensitive luminophores ([Ru(dpp) 3 ] 2+ and ([Ru(bpy) 3 ] 2+ ) in each pin-printed xerogel sensor element. The CMOS imager consumes an average power of 8 mW operating at 1 kHz sampling frequency driven at 5 V. The developed prototype system demonstrates a low cost and miniaturized luminescence multisensor system.

  20. Cell homogenization methods for pin-by-pin core calculations tested in slab geometry

    International Nuclear Information System (INIS)

    Yamamoto, Akio; Kitamura, Yasunori; Yamane, Yoshihiro

    2004-01-01

    In this paper, performances of spatial homogenization methods for fuel or non-fuel cells are compared in slab geometry in order to facilitate pin-by-pin core calculations. Since the spatial homogenization methods were mainly developed for fuel assemblies, systematic study of their performance for the cell-level homogenization has not been carried out. Importance of cell-level homogenization is recently increasing since the pin-by-pin mesh core calculation in actual three-dimensional geometry, which is less approximate approach than current advanced nodal method, is getting feasible. Four homogenization methods were investigated in this paper; the flux-volume weighting, the generalized equivalence theory, the superhomogenization (SPH) method and the nonlinear iteration method. The last one, the nonlinear iteration method, was tested as the homogenization method for the first time. The calculations were carried out in simplified colorset assembly configurations of PWR, which are simulated by slab geometries, and homogenization performances were evaluated through comparison with the reference cell-heterogeneous calculations. The calculation results revealed that the generalized equivalence theory showed best performance. Though the nonlinear iteration method can significantly reduce homogenization error, its performance was not as good as that of the generalized equivalence theory. Through comparison of the results obtained by the generalized equivalence theory and the superhomogenization method, important byproduct was obtained; deficiency of the current superhomogenization method, which could be improved by incorporating the 'cell-level discontinuity factor between assemblies', was clarified

  1. Development of 3D pseudo pin-by-pin calculation methodology in ANC

    International Nuclear Information System (INIS)

    Zhang, B.; Mayhue, L.; Huria, H.; Ivanov, B.

    2012-01-01

    Advanced cores and fuel assembly designs have been developed to improve operational flexibility, economic performance and further enhance safety features of nuclear power plants. The simulation of these new designs, along with strong heterogeneous fuel loading, have brought new challenges to the reactor physics methodologies currently employed in the industrial codes for core analyses. Control rod insertion during normal operation is one operational feature in the AP1000 R plant of Westinghouse next generation Pressurized Water Reactor (PWR) design. This design improves its operational flexibility and efficiency but significantly challenges the conventional reactor physics methods, especially in pin power calculations. The mixture loading of fuel assemblies with significant neutron spectrums causes a strong interaction between different fuel assembly types that is not fully captured with the current core design codes. To overcome the weaknesses of the conventional methods, Westinghouse has developed a state-of-the-art 3D Pin-by-Pin Calculation Methodology (P3C) and successfully implemented in the Westinghouse core design code ANC. The new methodology has been qualified and licensed for pin power prediction. The 3D P3C methodology along with its application and validation will be discussed in the paper. (authors)

  2. Non-Reciprocal Geometric Wave Diode by Engineering Asymmetric Shapes of Nonlinear Materials

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Jie [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Li, Nianbei [Tongji Univ., Shanghai Shi (China)

    2014-02-18

    Unidirectional nonreciprocal transport is at the heart of many fundamental problems and applications in both science and technology. Here we study how to design the novel wave diode devices to realize the non-reciprocal wave propagations. Analytical results reveal that such non-reciprocal wave propagation can be purely induced by asymmetric geometry in nonlinear materials. The detailed numerical simulations are performed for a more realistic geometric wave diode model with typical asymmetric shape, where good non-reciprocal wave diode effect has been demonstrated. The results open a way for making wave diodes efficiently simply through shape engineering.

  3. QUANTITATIVE DETECTION OF ENVIRONMENTALLY IMPORTANT DYES USING DIODE LASER/FIBER-OPTIC RAMAN

    Science.gov (United States)

    A compact diode laser/fiber-optic Raman spectrometer is used for quantitative detection of environmentally important dyes. This system is based on diode laser excitation at 782 mm, fiber optic probe technology, an imaging spectrometer, and state-of-the-art scientific CCD camera. ...

  4. Trending on Pinterest: an examination of pins about skin tanning.

    Science.gov (United States)

    Banerjee, Smita C; Rodríguez, Vivian M; Greene, Kathryn; Hay, Jennifer L

    2018-04-10

    Rates of melanoma and nonmelanoma skin cancers are on the rise in the USA with data revealing disproportionate increase in female young adults. The popularity of intentional skin tanning among U.S. adolescents is attributed to several factors, including prioritization of physical appearance, media images of tanned celebrities, ease of availability of artificial tanning facilities, and more recently, the prevalence and celebration of tanned skin on social media. Pinterest, as the third most popular social media platform, was searched for "pins" about skin tanning. The resultant "pins" were examined to understand the extent and characteristics of skin tanning portrayed on Pinterest. We analyzed pins on Pinterest about skin tanning (n = 501) through a quantitative content analysis. Overall, results indicated an overwhelmingly protanning characteristic of pins about skin tanning on Pinterest, with over 85% of pins promoting tanning behavior. The pins were generally characterized by the portrayal of a female subject (61%) and provided positive reinforcement for tanning (49%). Use of tanning for enhancing appearance was the main positive outcome expectancy portrayed in the pins (35%), and nudity or exposure of skin on arms (32%) and legs (31%) was evident in about a third of pins. With overwhelmingly positive pins promoting tanning, use of female subjects, exhibiting nudity, and appearance enhancement, there seems be to a consistent targeting of female users to accept tanning as a socially acceptable and popular behavior. The findings indicate a need for developing sun protection messages and the leveraging of social media for dissemination of skin cancer prevention and detection messages.

  5. The pin pixel detector--X-ray imaging

    CERN Document Server

    Bateman, J E; Derbyshire, G E; Duxbury, D M; Marsh, A S; Simmons, J E; Stephenson, R

    2002-01-01

    The development and testing of a soft X-ray gas pixel detector, which uses connector pins for the anodes is reported. Based on a commercial 100 pin connector block, a prototype detector of aperture 25.4 mm centre dot 25.4 mm can be economically fabricated. The individual pin anodes all show the expected characteristics of small gas detectors capable of counting rates reaching 1 MHz per pin. A 2-dimensional resistive divide readout system has been developed to permit the imaging properties of the detector to be explored in advance of true pixel readout electronics.

  6. Reconstruction calculation of pin power for ship reactor core

    International Nuclear Information System (INIS)

    Li Haofeng; Shang Xueli; Chen Wenzhen; Wang Qiao

    2010-01-01

    Aiming at the limitation of the software that pin power distribution for ship reactor core was unavailable, the calculation model and method of the axial and radial pin power distribution were proposed. Reconstruction calculations of pin power along axis and radius was carried out by bicubic and bilinear interpolation and cubic spline interpolation, respectively. The results were compared with those obtained by professional reactor physical soft with fine mesh difference. It is shown that our reconstruction calculation of pin power is simple and reliable as well as accurate, which provides an important theoretic base for the safety analysis and operating administration of the ship nuclear reactor. (authors)

  7. Vortex pinning landscape in MOD-TFA YBCO nanostroctured films

    Science.gov (United States)

    Gutierrez, J.; Puig, T.; Pomar, A.; Obradors, X.

    2008-03-01

    A methodology of general validity to study vortex pinning in YBCO based on Jc transport measurements is described. It permits to identify, separate and quantify three basic vortex pinning contributions associated to anisotropic-strong, isotropic-strong and isotropic-weak pinning centers. Thereof, the corresponding vortex pinning phase diagrams are built up. This methodology is applied to the new solution-derived YBCO nanostructured films, including controlled interfacial pinning by the growth of nanostructured templates by means of self-assembled processes [1] and YBCO-BaZrO3 nanocomposites prepared by modified solution precursors. The application of the methodology and comparison with a standard solution-derived YBCO film [2], enables us to identify the nature and the effect of the additional pinning centers induced. The nanostructured templates films show c-axis pinning strongly increased, controlling most of the pinning phase diagram. On the other hand, the nanocomposites have achieved so far, the highest pinning properties in HTc-superconductors [3], being the isotropic-strong defects contribution the origin of their unique properties. [1] M. Gibert et al, Adv. Mat. vol 19, p. 3937 (2007) [2] Puig.T et al, SuST EUCAS 2007 (to be published) [3] J. Gutierrez et al, Nat. Mat. vol. 6, p. 367 (2007) * Work supported by HIPERCHEM, NANOARTIS and MAT2005-02047

  8. ITP Hanford Type 40 pin electrical connector failure analysis

    International Nuclear Information System (INIS)

    Imrich, K.J.

    1993-01-01

    Corrosion products observed on the ITP Hanford Type 40 pin electrical connectors would be expected to adversely affect the power and control signals supplied to process equipment in the filter cell by the connectors. Corrosion products were consistent with those found on similar pins in DWPF. The recommendations based on the findings in this investigation are as follows: (1) Replace male and female rhodium plated pins with gold plated pins. (2) Replace the galvanized carbon steel spring on the male connector with a stainless steel spring. (3) Install protective caps over Hanford connectors when jumpers are removed

  9. Fuel-pin cladding transient failure strain criterion

    International Nuclear Information System (INIS)

    Bard, F.E.; Duncan, D.R.; Hunter, C.W.

    1983-01-01

    A criterion for cladding failure based on accumulated strain was developed for mixed uranium-plutonium oxide fuel pins and used to interpret the calculated strain results from failed transient fuel pin experiments conducted in the Transient Reactor Test (TREAT) facility. The new STRAIN criterion replaced a stress-based criterion that depends on the DORN parameter and that incorrectly predicted fuel pin failure for transient tested fuel pins. This paper describes the STRAIN criterion and compares its prediction with those of the stress-based criterion

  10. Dynamic Phases of Vortices in Superconductors with Periodic Pinning

    International Nuclear Information System (INIS)

    Reichhardt, C.; Olson, C.; Nori, F.

    1997-01-01

    We present results from extensive simulations of driven vortex lattices interacting with periodic arrays of pinning sites. Changing an applied driving force produces a rich variety of novel dynamical plastic flow phases which are very distinct from those observed in systems with random pinning arrays. Signatures of the transition between these different dynamical phases include sudden jumps in the current-voltage curves as well as marked changes in the vortex trajectories and vortex lattice order. Several dynamical phase diagrams are obtained as a function of commensurability, pinning strength, and spatial order of the pinning sites. copyright 1997 The American Physical Society

  11. Positioning and locking device for fuel pin to grid attachment

    International Nuclear Information System (INIS)

    Frick, T.M.; Wineman, A.L.

    1976-01-01

    A positioning and locking device for fuel pin to grid attachment provides an inexpensive means of positively positioning and locking the individual fuel pins which make up the driver fuel assemblies used in nuclear reactors. The device can be adapted for use with a currently used attachment grid assembly design and insures that the pins remain in their proper position throughout the in-reactor life of the assembly. This device also simplifies fuel bundle assembly in that a complete row of fuel pins can be added to the bundle during each step of assembly. 8 claims, 8 drawing figures

  12. Heat transfer in a fuel pin shipping container

    International Nuclear Information System (INIS)

    Ingham, J.G.

    1980-01-01

    Maximum cladding temperatures occur when the IDENT 1578 fuel pin shipping container is installed in the T-3 Cask. The maximum allowable cladding temperature of 800 0 F is reached when the rate of energy deposited in the 19-pin basket reaches 400 watts. Since 45% of the energy which is generated in the fuel escapes the 19-pin basket without being deposited, mostly gamma energy, the maximum allowable rate of heat generation is 400/.55 = 727 watts. Similarly, the maximum allowable cladding temperature of 800 0 F is reached when the rate of energy deposited in the 40-pin basket reaches 465 watts. Since 33% of the energy which is generated in the fuel escapes the 40-pin basket without being deposited, mostly gamma energy, the maximum allowable rate of heat generation is 465/.66 = 704 watts. The IDENT 1578 fuel pin shipping container therefore meets its thermal design criteria. IDENT 1578 can handle fuel pins with a decay heat load of 600 watts while maintaining the maximum fuel pin cladding temperature below 800 0 F. The emissivities which were determined from the test results for the basket tubes and container are relatively low and correspond to new, shiny conditions. As the IDENT 1578 container is exposed to high temperatures for extended periods of time during the transportation of fuel pins, the emissivities will probably increase. This will result in reduced temperatures

  13. FABRICE process for the refrabrication of experimental pins in a hot cell, from pins pre-irradiated in power reactors

    International Nuclear Information System (INIS)

    Vignesoult, N.; Atabek, R.; Ducas, S.

    1982-06-01

    The Fabrice ''hot cell refabrication'' process for small pins from very long irradiated fuel elements was developed at the CEA to allow parametric studies of the irradiation behavior of pins from nuclear power plants. Since this operation required complete assurance of the validity of the process, qualification of the fabrication was performed on test pins, refabricated in the hot cell, as well as irradiation qualification. The latter qualification was intended to demonstrate that, in identical experimental irradiation conditions, the refabricated Fabrice pins behaved in the same way as whole pins with the same initial characteristics. This qualification of the Fabrice process, dealing with more than twenty pins at different burnups, showed that fabrication did not alter: the inherent characteristics of the sampled fuel element and the irradiation behavior of the sampled fuel element [fr

  14. Material accountancy for metallic fuel pin casting

    International Nuclear Information System (INIS)

    Bucher, R.G.; Orechwa, Y.; Beitel, J.C.

    1995-01-01

    The operation of the Fuel Conditioning Facility (FCF) is based on the electrometallurgical processing of spent metallic reactor fuel. The pin casting operation, although only one of several operations in FCF, was the first to be on-line. As such, it has served to demonstrate the material accountancy system in many of its facets. This paper details, for the operation of the pin casting process with depleted uranium, the interaction between the mass tracking system (MTG) and some of the ancillary computer codes which generate pertinent information for operations and material accountancy. It is necessary to distinguish between two types of material balance calculations -- closeout for operations and material accountancy for safeguards. The two have much in common, for example, the mass tracking system database and the calculation of an inventory difference, but, in general, are not congruent with regard to balance period and balance spatial domain. Moreover, the objective, assessment, and reporting requirements of the calculated inventory difference are very different in the two cases

  15. The Egyptian Hair Pin: practical, sacred, fatal

    Directory of Open Access Journals (Sweden)

    Joann Fletcher

    2016-11-01

    Full Text Available Generally regarded as little more than a mundane tool employed in daily life, the humble hairpin occasionally played a rather more prominent role in history than has perhaps been appreciated. As the most ancient implements associated with hair styling, simple pins of bone and ivory were commonly employed in Egypt by c.4000 BC as a means of securing long hair in an upswept style (e.g. Petrie and Mace 1901, 21, 34. Although their occasional use by men undermines the assumption that hairpins are 'a relatively certain example of a “gendered” artefact' (Wilfong 1997, 67, the vast majority have been found in female burials. They can be made of bone and ivory, wood, steatite, glass, gold, silver and bronze, and two 12cm long bronze examples were found within the hair of Princess Ahmosi c.1550 BC (Fletcher 1995, 376, 441 while the hair of an anonymous woman at Gurob c.AD 110 had been secured in a bun with pins of bone, tortoiseshell and silver (Walker and Bierbrier 1997, 209.

  16. Method and device for cleaning fuel pins

    International Nuclear Information System (INIS)

    Matsumoto, Kaname; Oohigashi, Yoshiaki.

    1985-01-01

    Purpose: To remove clads or scales deposited on the outer surface of fuel pins in BWR type reactors. Method: A fuel assembly taken out of a reactor core is vertically contained without detaching a channel box in a scrubber tower disposed in a liquid tight manner within a fuel pool. Then, a specifically prepared slurry is caused to flow and uprise from the bottom of the scrubber tower into the channel box and then discharged from the top of the tower. The slurry is prepared by mixing pure water and granules (for example, as activated carbon, ion exchanger resin, iron and molecular sieve) of such a granular size as not causing clogging in the channel box of the fuel assembly and having a larger specific gravity than pure water. The slurry flown into the channel box scrubs the surface of fuel pins to scrape off clads or scales. Then, discharged slurry is sent to a hydraulic cyclone to separate the granules from the clads or scales. (Ikeda, J.)

  17. BARS - a heterogeneous code for 3D pin-by-pin LWR steady-state and transient calculation

    International Nuclear Information System (INIS)

    Avvakumov, A.V.; Malofeev, V.M.

    2000-01-01

    A 3D pin-by-pin dynamic model for LWR detailed calculation was developed. The model is based on a coupling of the BARS neutronic code with the RELAP5/MOD3.2 thermal hydraulic code. This model is intended to calculate a fuel cycle, a xenon transient, and a wide range of reactivity initiated accidents in a WWER and a PWR. Galanin-Feinberg heterogeneous method was realized in the BARS code. Some results for a validation of the heterogeneous method are presented for reactivity coefficients, a pin-by-pin power distribution, and a fast pulse transient. (Authors)

  18. High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates

    Science.gov (United States)

    Zhu, Zhifu; Zhang, Heqiu; Liang, Hongwei; Tang, Bin; Peng, Xincun; Liu, Jianxun; Yang, Chao; Xia, Xiaochuan; Tao, Pengcheng; Shen, Rensheng; Zou, Jijun; Du, Guotong

    2018-06-01

    The temperature-dependent radiation-detection performance of an alpha-particle detector that was based on a gallium-nitride (GaN)-based pin structure was studied from 290 K to 450 K. Current-voltage-temperature measurements (I-V-T) of the reverse bias show the exponential dependence of leakage currents on the voltage and temperature. The current transport mechanism of the GaN-based pin diode from the reverse bias I-V fitting was analyzed. The temperature-dependent pulse-height spectra of the detectors were studied using an 241 Am alpha-particle source at a reverse bias of 10 V, and the peak positions shifted from 534 keV at 290 K to 490 keV at 450 K. The variation of full width at half maximum (FWHM) from 282 keV at 290 K to 292 keV at 450 K is almost negligible. The GaN-based pin detectors are highly promising for high-temperature environments up to 450 K.

  19. Diode-laser-illuminated automotive lamp systems

    Science.gov (United States)

    Marinelli, Michael A.; Remillard, Jeffrey T.

    1998-05-01

    We have utilized the high brightness of state-of-the-art diode laser sources, and a variety of emerging optical technologies to develop a new class of thin, uniquely styled automotive brake and signal lamps. Using optics based on thin (5 mm) plastic sheets, these lamps provide appearance and functional advantages not attainable with traditional automotive lighting systems. The light is coupled into the sheets using a 1 mm diameter glass fiber, and manipulated using refraction and reflection from edges, surfaces, and shaped cut-outs. Light can be extracted with an efficiency of approximately 50% and formed into a luminance distribution that meets the Society of Automotive Engineers (SAE) photometric requirements. Prototype lamps using these optics have been constructed and are less than one inch in thickness. Thin lamps reduce sheet metal costs, complexity, material usage, weight, and allow for increased trunk volume. In addition, these optics enhance lamp design flexibility. When the lamps are not energized, they can appear body colored, and when lighted, the brightness distribution across the lamp can be uniform or structured. A diode laser based brake lamp consumes seven times less electrical power than one using an incandescent source and has instant on capability. Also, diode lasers have the potential to be 10-year/150,000 mile light sources.

  20. Personal neutron diode dosemeter

    International Nuclear Information System (INIS)

    Barthe, J.; Lahaye, T.; Moiseev, T.; Portal, G.

    1993-01-01

    The control and management of neutron doses, received by workers in nuclear power or research facilities, requires a knowledge of cumulated dose equivalent or dose equivalent rate in real time. Individual dosemeters so far developed for this purpose are scarce and not very satisfactory. Passive dosemeters such as TLD systems based on the albedo effect, nuclear emulsions or solid track detectors, do not give sufficiently accurate measurements. Furthermore, the increase in the quality factor and the more restrictive new ICRP recommendations diminish the maximum admissible threshold making currently used systems obsolete. Other than bubble dosemeter systems, based on thermodynamic effects of a superheated gel, no simple electronic device is available at the present time. The development of diode based dosimetric gamma badges, having a size similar to that of credit cards, has stimulated us to design and develop a personal neutron dosemeter based on a double diode system. The results obtained are very encouraging and practical models should become available in the near future. (author)

  1. Polymer light emitting diodes

    International Nuclear Information System (INIS)

    Gautier-Thianche, Emmmanuelle

    1998-01-01

    We study sandwich type semiconducting polymer light emitting diodes; anode/polymer/cathode. ITO is selected as anode, this polymer is a blend of a commercially available polymer with a high hole transport ability: polyvinyl-carbazole and a laser dye: coumarin-515. Magnesium covered with silver is chosen for the anode. We study the influence of polymer thickness and coumarin doping ratio on electroluminescence spectrum, electric characteristics and quantum efficiency. An important drawback is that diodes lifetime remains low. In the second part of our study we determine degradations causes with X-Ray reflectivity experiments. It may be due to ITO very high roughness. We realize a new type of planar electroluminescent device: a channel type electroluminescent device in which polymer layer is inserted into an aluminium channel. Such a device is by far more stable than using classical sandwich structures with the same polymer composition: indeed, charges are generated by internal-field ionization and there is no injection from the electrode to the polymer. This avoids electrochemical reactions at electrodes, thus reducing degradations routes. (author) [fr

  2. Characterization of the passivation processes for PIN structures

    Energy Technology Data Exchange (ETDEWEB)

    Avila Garcia, Alejandro; Reyes Barranca, Mario Alfredo [Instituto Politecnico Nacional, Mexico, D.F (Mexico); Zarate Corona, Oscar [Universidad Autonoma de Puebla, Puebla (Mexico)

    2001-02-01

    Result on the evaluation of PIN structures made on crystalline silicon, processed in our laboratory, which underwent several gettering treatments are reported. Structures were evaluated through the measurement of lifetime {tau} and I-V characteristic. Also, deep levels due to defects were characterized; the activation energy (E{sub c} -E{sub t}), capture cross section {sigma} and relative concentration (N{sub t} / N{sub d}) were obtained. Techniques used in the characterization were Output Circuit Voltage Decay (OCVD), Current-Voltage measurements (I-V) and Deep Level Transient Spectroscopy (DLTS), respectively. These measurements show variations in the parameters, as a result of the gettering techniques applied. The best results were achieved for two types of samples: the first having high phosphorus concentration, no backside damage and annealed at 850 Celsius degrees without HCI atmosphere; the second having low phosphorus concentration, no backside damage and annealed at 850 Celsius degrees without HCI atmosphere. For these samples, the minority carrier lifetime was near 3{upsilon}s, the I-V characteristics imply that conductivity modulation takes place within the intrinsic region even for low voltages, as in commercial diodes. Two defects were observed to remain after the gettering processes: one is related to the phosphorus-vacant pair and the other to the divacancy. Concentrations could be decreased from {approx}4 x 10{sup 1}1cm{sup -3} down to 3 x 10{sup -9} cm{sup -3} for the first and down to 2 x 10{sup 1}0 cm{sup -3} for the second one. [Spanish] Se reportan resultados de la evaluacion de estructuras PIN en silicio procesadas en nuestro laboratorio, las cuales fueron sometidas a diversos tratamientos de gettering. Las estructuras fueron evaluadas a traves de la medicion de tiempo de vida {tau} y la caracteristica I-V. Se caracterizaron tambien los defectos que introducen niveles profundos en la region activa del dispositivo, obteniendo energia de

  3. Pinning in BSCCO above the ordinary irreversibility line

    Science.gov (United States)

    Indenbom, M. V.; van der Beek, C. J.; Berseth, V.; Konczykowski, M.; Motohira, N.; Berger, H.; Benoit, W.

    1996-12-01

    Frequency-dependent observations of magnetic flux structures are used to show that pinning plays a principal role in the whole mixed state in Bi2Sr2CaCu2O8 (BSCCO) single crystals. We speculate that the random pinning force on the moving vortices may dominate over thermal fluctuations and considerably modify the position of the vortex lattice phase transition.

  4. Inscuteable Regulates the Pins-Mud Spindle Orientation Pathway

    Science.gov (United States)

    Mauser, Jonathon F.; Prehoda, Kenneth E.

    2012-01-01

    During asymmetric cell division, alignment of the mitotic spindle with the cell polarity axis ensures that the cleavage furrow separates fate determinants into distinct daughter cells. The protein Inscuteable (Insc) is thought to link cell polarity and spindle positioning in diverse systems by binding the polarity protein Bazooka (Baz; aka Par-3) and the spindle orienting protein Partner of Inscuteable (Pins; mPins or LGN in mammals). Here we investigate the mechanism of spindle orientation by the Insc-Pins complex. Previously, we defined two Pins spindle orientation pathways: a complex with Mushroom body defect (Mud; NuMA in mammals) is required for full activity, whereas binding to Discs large (Dlg) is sufficient for partial activity. In the current study, we have examined the role of Inscuteable in mediating downstream Pins-mediated spindle orientation pathways. We find that the Insc-Pins complex requires Gαi for partial activity and that the complex specifically recruits Dlg but not Mud. In vitro competition experiments revealed that Insc and Mud compete for binding to the Pins TPR motifs, while Dlg can form a ternary complex with Insc-Pins. Our results suggest that Insc does not passively couple polarity and spindle orientation but preferentially inhibits the Mud pathway, while allowing the Dlg pathway to remain active. Insc-regulated complex assembly may ensure that the spindle is attached to the cortex (via Dlg) before activation of spindle pulling forces by Dynein/Dynactin (via Mud). PMID:22253744

  5. IMp: The customizable LEGO(®) Pinned Insect Manipulator.

    Science.gov (United States)

    Dupont, Steen; Price, Benjamin; Blagoderov, Vladimir

    2015-01-01

    We present a pinned insect manipulator (IMp) constructed of LEGO® building bricks with two axes of movement and two axes of rotation. In addition we present three variants of the IMp to emphasise the modular design, which facilitates resizing to meet the full range of pinned insect specimens, is fully customizable, collapsible, affordable and does not require specialist tools or knowledge to assemble.

  6. Cracking Bank PINs by Playing Mastermind

    Science.gov (United States)

    Focardi, Riccardo; Luccio, Flaminia L.

    The bank director was pretty upset noticing Joe, the system administrator, spending his spare time playing Mastermind, an old useless game of the 70ies. He had fought the instinct of telling him how to better spend his life, just limiting to look at him in disgust long enough to be certain to be noticed. No wonder when the next day the director fell on his chair astonished while reading, on the newspaper, about a huge digital fraud on the ATMs of his bank, with millions of Euros stolen by a team of hackers all around the world. The article mentioned how the hackers had 'played with the bank computers just like playing Mastermind', being able to disclose thousands of user PINs during the one-hour lunch break. That precise moment, a second before falling senseless, he understood the subtle smile on Joe's face the day before, while training at his preferred game, Mastermind.

  7. The lumped parameter model for fuel pins

    Energy Technology Data Exchange (ETDEWEB)

    Liu, W S [Ontario Hydro, Toronto, ON (Canada)

    1996-12-31

    The use of a lumped fuel-pin model in a thermal-hydraulic code is advantageous because of computational simplicity and efficiency. The model uses an averaging approach over the fuel cross section and makes some simplifying assumptions to describe the transient equations for the averaged fuel, fuel centerline and sheath temperatures. It is shown that by introducing a factor in the effective fuel conductivity, the analytical solution of the mean fuel temperature can be modified to simulate the effects of the flux depression in the heat generation rate and the variation in fuel thermal conductivity. The simplified analytical method used in the transient equation is presented. The accuracy of the lumped parameter model has been compared with the results from the finite difference method. (author). 4 refs., 2 tabs., 4 figs.

  8. Alpha particles spectrometer with photodiode PIN

    International Nuclear Information System (INIS)

    Chacon R, A.; Hernandez V, R.; Hernandez D, V. M.; Vega C, H. R.; Ramirez G, J.

    2009-10-01

    The radiation propagates in form of electromagnetic waves or corpuscular radiation; if the radiation energy causes ionization in environment that crosses it is considered ionizing radiation. To detect radiation several detectors types are used, if the radiation are alpha particles are used detectors proportional type or trace elements. In this work the design results, construction and tests of an alpha particles spectrometer are presented, which was designed starting from a photodiode PIN type. The system design was simulated with a code for electronic circuits. With results of simulation phase was constructed the electronic phase that is coupled to a multichannel analyzer. The resulting electronic is evaluated analyzing the electronic circuit performance before an alphas triple source and alpha radiation that produce two smoke detectors of domestic use. On the tests phase we find that the system allows obtain, in a multichannel, the pulses height spectrum, with which we calibrate the system. (Author)

  9. Effective augmentation of networked systems and enhancing pinning controllability

    Science.gov (United States)

    Jalili, Mahdi

    2018-06-01

    Controlling dynamics of networked systems to a reference state, known as pinning control, has many applications in science and engineering. In this paper, we introduce a method for effective augmentation of networked systems, while also providing high levels of pinning controllability for the final augmented network. The problem is how to connect a sub-network to an already existing network such that the pinning controllability is maximised. We consider the eigenratio of the augmented Laplacian matrix as a pinning controllability metric, and use graph perturbation theory to approximate the influence of edge addition on the eigenratio. The proposed metric can be effectively used to find the inter-network links connecting the disjoint networks. Also, an efficient link rewiring approach is proposed to further optimise the pinning controllability of the augmented network. We provide numerical simulations on synthetic networks and show that the proposed method is more effective than heuristic ones.

  10. Repetitive nanosecond electron accelerators type URT-1 for radiation technology

    Science.gov (United States)

    Sokovnin, S. Yu.; Balezin, M. E.

    2018-03-01

    The electron accelerator URT-1М-300 for mobile installation was created for radiation disinfecting to correct drawbacks that were found the URT-1M electron accelerator operation (the accelerating voltage up to 1 МV, repetition rate up to 300 pps, electron beam size 400 × 100 mm, the pulse width about 100 ns). Accelerator configuration was changed that allowed to reduce significantly by 20% tank volume with oil where is placed the system of formation high-voltage pulses, thus the average power of the accelerator is increased by 6 times at the expense of increase in pulses repetition rate. Was created the system of the computerized monitoring parameters (output parameters and thermal mode) and remote control of the accelerator (charge voltage, pulse repetition rate), its elements and auxiliary systems (heat of the thyratron, vacuum system), the remote control panel is connected to the installation by the fiber-optical channel, what lightens the work for service personnel. For generating an electron beam up to 400 mm wide there are used metal- ceramic] and metal-dielectric cold cathodes of several emission elements (plates) with a non-uniform distribution of the electron beam current density on the output foil ± 15%. It was found that emission drop of both type of cathodes, during the operation at the high repetition rate (100 pps) is substantial at the beginning of the process, and then proceeds rather slowly that allows for continuous operation up to 40 h. Experiments showed that linear dependence of the voltage and a signal from the pin-diode remains within the range of the charge voltage 45-65 kV. Thus, voltage increases from 690 to 950 kV, and the signal from the pin-diode - from (2,8-4,6)*104 Gy/s. It allows to select electron energy quite precisely with consideration of the radiation technology requirements.

  11. Evaluation of automatic densitometer with laser diode

    International Nuclear Information System (INIS)

    Larrea Cox, Pedro J.; Hernandez Tabares, Lorenzo; Suarez San Pedro, Cirilo E.; Vazquez Cano, Aradys; Reyes Rodriguez, Marlen de los

    2009-01-01

    The evaluation of a prototype of an automatic transmission scanning densitometer is presented. It contains a semiconductor diode laser as a light source, and is mainly oriented to the analysis of protein electrophoresis. It was developed on the Center for Technological Applications and Nuclear Development (CEADEN). Its technical specifications were established and certified by the National Institute of Researches on Metrology (INIMET), and also the equipment was submitted for assays to the Process Control Laboratory, that belongs to the 'Adalberto Pesant' Enterprise for Sera and Hemo derivatives Products, in Havana city, where it was employed to the partial quality control of products that are made there, achieving satisfactory results. (Author)

  12. Laser materials processing with diode lasers

    OpenAIRE

    Li, Lin; Lawrence, Jonathan; Spencer, Julian T.

    1996-01-01

    Laser materials processing is currently dominated by CO2, Nd-YAG and Excimer lasers. Continuous advances in semiconductor laser technology over the last decade have increased the average power output of the devices annualy by two fold, resulting in the commercial availability of the diode lasers today with delivery output powers in excess of 60W in CW mode and 5kW in qasi-CW mode. The advantages of compactness, high reliability, high efficiency and potential low cost, due to the mass producti...

  13. Analysis of action of device with spring pins for picking up of retted flax straw

    Directory of Open Access Journals (Sweden)

    V. G. Chernikov

    2016-01-01

    Full Text Available Weather conditions in flax cultivation areas during harvesting time can be characterized with high rainfalls, relative humidity and, in some areas, extremely low temperature. Clogging of fields with stones, grass germination through flax swaths, often an absence of homogeneity on length and thickness of straw in swaths require working out new devices for straw lifting. Existing devices for picking up do not provide a high-quality lifting of flax swaths and have a low coefficient of reliability of the process. Researches and experimental-design works were carried out to create a constructive-technological scheme of the picking up device of cylindrical type with spring-loaded rigid pins. The mathematical model of the device operation when a pin touching an obstacle. The condition of balance of the mechanism under which the pin of a cilinder will operate technological process of picking up of retted flax straw without action of the safety device (spring was described. The offered method of calculation of operation of this device was introduced in a common flax swath lifter-turners

  14. Best practices : bus signage for persons with visual impairments : light-emitting diode (LED) signs

    Science.gov (United States)

    2004-01-01

    This best-practices report provides key information regarding the use of Light-Emitting Diode (LED) sign technologies to present destination and route information on transit vehicles. It will assist managers and engineers in the acquisition and use o...

  15. Evaluation of light-emitting diode beacon light fixtures : final report.

    Science.gov (United States)

    2009-12-01

    Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

  16. A pinning puzzle: two similar, non-superconducting chemical deposits in YBCO-one pins, the other does not

    Energy Technology Data Exchange (ETDEWEB)

    Sawh, Ravi-Persad; Weinstein, Roy; Gandini, Alberto; Skorpenske, Harley; Parks, Drew, E-mail: Weinstein@uh.ed [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Department of Physics, University of Houston, Houston, TX 77204-5005 (United States); Texas Center for Superconductivity at UH, University of Houston, Houston, TX 77204-5002 (United States)

    2009-09-15

    The pinning effects of two kinds of U-rich deposits in YBCO (YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}) are compared. One is a five-element compound, (U{sub 0.6}Pt{sub 0.4})YBa{sub 2}O{sub 6}, which is a paramagnetic double perovskite which forms as profuse stable nanosize deposits, and pins very well. The other is a four-element compound, (U{sub 0.4}Y{sub 0.6})BaO{sub 3}, which is a ferromagnetic single perovskite which forms as profuse stable nanosize deposits and pins very weakly or not at all. The pinning comparison is done with nearly equal deposit sizes and number of deposits per unit volume for the two compounds. Evidence for the pinning capability, chemical makeup, x-ray diffraction signature, and magnetic properties of the two compounds is reported.

  17. Atomic spectroscopy with diode lasers

    International Nuclear Information System (INIS)

    Tino, G.M.

    1994-01-01

    Some applications of semiconductor diode lasers in atomic spectroscopy are discussed by describing different experiments performed with lasers emitting in the visible and in the near-infrared region. I illustrate the results obtained in the investigation of near-infrared transitions of atomic oxygen and of the visible intercombination line of strontium. I also describe how two offset-frequency-locked diode lasers can be used to excite velocity selective Raman transitions in Cs. I discuss the spectral resolution, the accuracy of frequency measurements, and the detection sensitivity achievable with diode lasers. (orig.)

  18. Laterally injected light-emitting diode and laser diode

    Science.gov (United States)

    Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

    2015-06-16

    A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

  19. PInCom project: SaaS Big Data Platform for and Communication Channels

    Directory of Open Access Journals (Sweden)

    Juan Manuel Lombardo

    2016-03-01

    Full Text Available The problem of optimization will be addressed in this article, based on the premise that the successful implementation of Big Data solutions requires as a determining factor not only effective -it is assumed- but the efficiency of the responsiveness of management information get the best value offered by the digital and technological environment for gaining knowledge. In adopting Big Data strategies should be identified storage technologies and appropriate extraction to enable professionals and companies from different sectors to realize the full potential of the data. A success story is the solution PInCom: Intelligent-Communications Platform that aims customer loyalty by sending multimedia communications across heterogeneous transmission channels.

  20. Advances in tunable diode laser technology

    Science.gov (United States)

    Lo, W.

    1980-01-01

    The improvement of long-term reliability, the purification of mode properties, and the achievement of higher-temperature operation were examined. In reliability studies a slow increase in contact resistance during room temperature storage for lasers fabricated with In-Au or In-Pt contacts was observed. This increase is actually caused by the diffusion of In into the surface layer of laser crystals. By using a three layered structure of In-Au-Pt or In-Pt-Au, this mode of degradation was reduced. In characterizing the mode properties, it was found that the lasers emit in a highly localized, filamentary manner. For widestripe lasers the emission occurs near the corners of the junction. In order to achieve single-mode operation, stripe widths on the order of 8-10 micrometers are needed. Also, it was found that room temperature electroluminescence is possible near 4.6 micrometers.

  1. Optimal pin enrichment distributions in nuclear reactor fuel bundles

    International Nuclear Information System (INIS)

    Lim, E.Y.

    1976-01-01

    A methodology has been developed to determine the fuel pin enrichment distribution that yields the best approximation to a prescribed power distribution in nuclear reactor fuel bundles. The problem is formulated as an optimization problem in which the optimal pin enrichments minimize the sum of squared deviations between the actual and prescribed fuel pin powers. A constant average enrichment constraint is imposed to ensure that a suitable value of reactivity is present in the bundle. When constraints are added that limit the fuel pins to a few enrichment types, one must determine not only the optimal values of the enrichment types but also the optimal distribution of the enrichment types amongst the pins. A matrix of boolean variables is used to describe the assignment of enrichment types to the pins. This nonlinear mixed integer programming problem may be rigorously solved with either exhaustive enumeration or branch and bound methods using a modification of the algorithm from the continuous problem as a suboptimization. Unfortunately these methods are extremely cumbersome and computationally overwhelming. Solutions which require only a moderate computational effort are obtained by assuming that the fuel pin enrichments in this problem are ordered as in the solution to the continuous problem. Under this assumption search schemes using either exhaustive enumeration or branch and bound become computationally attractive. An adaptation of the Hooke--Jeeves pattern search technique is shown to be especially efficient

  2. Roles of pinning strength and density in vortex melting

    International Nuclear Information System (INIS)

    Obaidat, I M; Khawaja, U Al; Benkraouda, M

    2008-01-01

    We have investigated the role of pinning strength and density on the equilibrium vortex-lattice to vortex-liquid phase transition under several applied magnetic fields. This study was conducted using a series of molecular dynamic simulations on several samples with different strengths and densities of pinning sites which are arranged in periodic square arrays. We have found a single solid-liquid vortex transition when the vortex filling factor n>1. We have found that, for fixed pinning densities and strengths, the melting temperature, T m , decreases almost linearly with increasing magnetic field. Our results provide direct numerical evidence for the significant role of both the strength and density of pinning centers on the position of the melting line. We have found that the vortex-lattice to vortex-liquid melting line shifts up as the pinning strength or the pinning density was increased. The effect on the melting line was found to be more pronounced at small values of strength and density of pinning sites

  3. Loss of Pin1 Suppresses Hedgehog-Driven Medulloblastoma Tumorigenesis

    Directory of Open Access Journals (Sweden)

    Tao Xu

    2017-03-01

    Full Text Available Medulloblastoma is the most common malignant brain tumor in children. Therapeutic approaches to medulloblastoma (combination of surgery, radiotherapy, and chemotherapy have led to significant improvements, but these are achieved at a high cost to quality of life. Alternative therapeutic approaches are needed. Genetic mutations leading to the activation of the Hedgehog pathway drive tumorigenesis in ~30% of medulloblastoma. In a yeast two-hybrid proteomic screen, we discovered a novel interaction between GLI1, a key transcription factor for the mediation of Hedgehog signals, and PIN1, a peptidylprolyl cis/trans isomerase that regulates the postphosphorylation fate of its targets. The GLI1/PIN1 interaction was validated by reciprocal pulldowns using epitope-tagged proteins in HEK293T cells as well as by co-immunoprecipiations of the endogenous proteins in a medulloblastoma cell line. Our results support a molecular model in which PIN1 promotes GLI1 protein abundance, thus contributing to the positive regulation of Hedgehog signals. Most importantly, in vivo functional analyses of Pin1 in the GFAP-tTA;TRE-SmoA1 mouse model of Hedgehog-driven medulloblastoma demonstrate that the loss of Pin1 impairs tumor development and dramatically increases survival. In summary, the discovery of the GLI1/PIN1 interaction uncovers PIN1 as a novel therapeutic target in Hedgehog-driven medulloblastoma tumorigenesis.

  4. Disruptive laser diode source for embedded LIDAR sensors

    Science.gov (United States)

    Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

    2017-02-01

    Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources

  5. Thermometric Property of a Diode.

    Science.gov (United States)

    Inman, Fred W.; Woodruff, Dan

    1995-01-01

    Presents a simple way to implement the thermometric property of a semiconductor diode to produce a thermometer with a nearly linear dependence upon temperature over a wide range of temperatures. (JRH)

  6. Enhanced vbasis laser diode package

    Science.gov (United States)

    Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

    2014-08-19

    A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

  7. Fuel pin design algorithm for conceptual design studies

    International Nuclear Information System (INIS)

    Uselman, J.P.

    1979-01-01

    Two models are available which are currently verified by part of the requirements and which are adaptable as algorithms for the complete range. Fuel thermal performance is described by the HEDL SIEX model. Cladding damage and total deformation are determined by the GE GRO-II structural analysis code. A preliminary fuel pin performance model for analysis of (U, P/sub U/)O 2 pins in the COROPT core conceptual design system has been constructed by combining the key elements of SIEX and GRO-II. This memo describes the resulting pin performance model and its interfacing with COROPT system. Some exemplary results are presented

  8. Self-organized critical behavior in pinned flux lattices

    International Nuclear Information System (INIS)

    Pla, O.; Nori, F.

    1991-01-01

    We study the response of pinned fluxed lattices, under small perturbations in the driving force, below and close to the pinning-depinning transition. For driving Lorentz forces below F c (the depinning force at which the whole flux lattice slides), the system has instabilities against small force increases, with a power-law distribution characteristic of self-organized criticality. Specifically, D(d)∼d -1,3 , where d is the displacement of a flux line after a very small force increase. We also study the initial stages of the motion of the lattice once the driving force overcomes the pinning forces

  9. Fabrication of oxide dispersion strengthened ferritic clad fuel pins

    International Nuclear Information System (INIS)

    Zirker, L.R.; Bottcher, J.H.; Shikakura, S.; Tsai, C.L.

    1991-01-01

    A resistance butt welding procedure was developed and qualified for joining ferritic fuel pin cladding to end caps. The cladding are INCO MA957 and PNC ODS lots 63DSA and 1DK1, ferritic stainless steels strengthened by oxide dispersion, while the end caps are HT9 a martensitic stainless steel. With adequate parameter control the weld is formed without a residual melt phase and its strength approaches that of the cladding. This welding process required a new design for fuel pin end cap and weld joint. Summaries of the development, characterization, and fabrication processes are given for these fuel pins. 13 refs., 6 figs., 1 tab

  10. Inverse crystallization if Abrikosov vortex system at periodic pinning

    CERN Document Server

    Zyubin, M V; Kashurnikov, V A

    2002-01-01

    The vortex system in the quasi-two-dimensional HTSC plate is considered in the case of the periodic pinning. The M(H) magnetization curves by various values of the external magnetic field and different temperatures are calculated through the Monte Carlo method. It is shown that in the case of the periodic pinning the crystallization of the vortex system is possible by the temperature increase. A number of peculiarities conditioned by the impact of the pinning centers periodic lattice are identified on the magnetization curves. The pictures of the vortex distribution corresponding to various points on the M(H) curve are obtained

  11. Analyzing the use of pins in safety bearings

    DEFF Research Database (Denmark)

    da Fonseca, Cesar A. L. L.; Weber, Hans I.; Fleischer, Philip F.

    2015-01-01

    A new concept for safety bearings is analyzed: useful in emergency situations, it shall protect the bearing from destruction by the use of pins which impact with a disc, both capable of good energy dissipation. Results of work in progress are presented by validating partial stages......–Kutta method is validated with experimental results. Simulations of rotor orbits due to the impact condition are analyzed and compared to data obtained from the experiment giving a good perspective on the use of pins. The contact interaction between rotor and pins uses an elastic-dissipative model. In addition...

  12. How Helpful is Colour-Cueing of PIN Entry?

    OpenAIRE

    Renaud, Karen; Ramsay, Judith

    2014-01-01

    21st Century citizens are faced with the need to remember numbers of PINs (Personal Identification Numbers) in order to do their daily business, and they often have difficulties due to human memory limitations. One way of helping them could be by providing cues during the PIN entry process. The provision of cues that would only be helpful to the PIN owner is challenging because the cue should only make sense to the legitimate user, and not to a random observer. In this paper we report on an e...

  13. Discovery of novel selenium derivatives as Pin1 inhibitors by high-throughput screening

    International Nuclear Information System (INIS)

    Subedi, Amit; Shimizu, Takeshi; Ryo, Akihide; Sanada, Emiko; Watanabe, Nobumoto; Osada, Hiroyuki

    2016-01-01

    Peptidyl prolyl cis/trans isomerization by Pin1 regulates various oncogenic signals during cancer progression, and its inhibition through multiple approaches has established Pin1 as a therapeutic target. However, lack of simplified screening systems has limited the discovery of potent Pin1 inhibitors. We utilized phosphorylation-dependent binding of Pin1 to its specific substrate to develop a screening system for Pin1 inhibitors. Using this system, we screened a chemical library, and identified a novel selenium derivative as Pin1 inhibitor. Based on structure-activity guided chemical synthesis, we developed more potent Pin1 inhibitors that inhibited cancer cell proliferation. -- Highlights: •Novel screening for Pin1 inhibitors based on Pin1 binding is developed. •A novel selenium compound is discovered as Pin1 inhibitor. •Activity guided chemical synthesis of selenium derivatives resulted potent Pin1 inhibitors.

  14. Planar transistors and impatt diodes with ion implantation

    International Nuclear Information System (INIS)

    Dorendorf, H.; Glawischnig, H.; Grasser, L.; Hammerschmitt, J.

    1975-03-01

    Low frequency planar npn and pnp transistors have been developed in which the base and emitter have been fabricated using ion implantation of boron and phosphorus by a drive-in diffusion. Electrical parameters of the transistors are comparable with conventionally produced transistors; the noise figure was improved and production tolerances were significantly reduced. Silicon-impatt diodes for the microwave range were also fabricated with implanted pn junctions and tested for their high frequency characteristics. These diodes, made in an improved upside down technology, delivered output power up to 40 mW (burn out power) at 30 GHz. Reverse leakage current and current carrying capability of these diodes were comparable to diffused structures. (orig.) 891 ORU 892 MB [de

  15. A wirelessly powered microspectrometer for neural probe-pin device

    Science.gov (United States)

    Choi, Sang H.; Kim, Min H.; Song, Kyo D.; Yoon, Hargsoon; Lee, Uhn

    2015-12-01

    Treatment of neurological anomalies, whether done invasively or not, places stringent demands on device functionality and size. We have developed a micro-spectrometer for use as an implantable neural probe to monitor neuro-chemistry in synapses. The micro-spectrometer, based on a NASA-invented miniature Fresnel grating, is capable of differentiating the emission spectra from various brain tissues. The micro-spectrometer meets the size requirements, and is able to probe the neuro-chemistry and suppression voltage typically associated with a neural anomaly. This neural probe-pin device (PPD) is equipped with wireless power technology (WPT) to enable operation in a continuous manner without requiring an implanted battery. The implanted neural PPD, together with a neural electronics interface and WPT, enable real-time measurement and control/feedback for remediation of neural anomalies. The design and performance of the combined PPD/WPT device for monitoring dopamine in a rat brain will be presented to demonstrate the current level of development. Future work on this device will involve the addition of an embedded expert system capable of performing semi-autonomous management of neural functions through a routine of sensing, processing, and control.

  16. A PWR Thorium Pin Cell Burnup Benchmark

    Energy Technology Data Exchange (ETDEWEB)

    Weaver, Kevan Dean; Zhao, X.; Pilat, E. E; Hejzlar, P.

    2000-05-01

    As part of work to evaluate the potential benefits of using thorium in LWR fuel, a thorium fueled benchmark comparison was made in this study between state-of-the-art codes, MOCUP (MCNP4B + ORIGEN2), and CASMO-4 for burnup calculations. The MOCUP runs were done individually at MIT and INEEL, using the same model but with some differences in techniques and cross section libraries. Eigenvalue and isotope concentrations were compared on a PWR pin cell model up to high burnup. The eigenvalue comparison as a function of burnup is good: the maximum difference is within 2% and the average absolute difference less than 1%. The isotope concentration comparisons are better than a set of MOX fuel benchmarks and comparable to a set of uranium fuel benchmarks reported in the literature. The actinide and fission product data sources used in the MOCUP burnup calculations for a typical thorium fuel are documented. Reasons for code vs code differences are analyzed and discussed.

  17. Pinning Control Strategy of Multicommunity Structure Networks

    Directory of Open Access Journals (Sweden)

    Chao Ding

    2017-01-01

    Full Text Available In order to investigate the effects of community structure on synchronization, a pinning control strategy is researched in a class of complex networks with community structure in this paper. A feedback control law is designed based on the network community structure information. The stability condition is given and proved by using Lyapunov stability theory. Our research shows that as to community structure networks, there being a threshold hT≈5, when coupling strength bellows this threshold, the stronger coupling strength corresponds to higher synchronizability; vice versa, the stronger coupling strength brings lower synchronizability. In addition the synchronizability of overlapping and nonoverlapping community structure networks was simulated and analyzed; while the nodes were controlled randomly and intensively, the results show that intensive control strategy is better than the random one. The network will reach synchronization easily when the node with largest betweenness was controlled. Furthermore, four difference networks’ synchronizability, such as Barabási-Albert network, Watts-Strogatz network, Erdös-Rényi network, and community structure network, are simulated; the research shows that the community structure network is more easily synchronized under the same control strength.

  18. Ideal glass transitions by random pinning

    Science.gov (United States)

    Cammarota, Chiara; Biroli, Giulio

    2012-01-01

    We study the effect of freezing the positions of a fraction c of particles from an equilibrium configuration of a supercooled liquid at a temperature T. We show that within the random first-order transition theory pinning particles leads to an ideal glass transition for a critical fraction c = cK(T) even for moderate supercooling; e.g., close to the Mode-Coupling transition temperature. First we derive the phase diagram in the T - c plane by mean field approximations. Then, by applying a real-space renormalization group method, we obtain the critical properties for |c - cK(T)| → 0, in particular the divergence of length and time scales, which are dominated by two zero-temperature fixed points. We also show that for c = cK(T) the typical distance between frozen particles is related to the static point-to-set length scale of the unconstrained liquid. We discuss what are the main differences when particles are frozen in other geometries and not from an equilibrium configuration. Finally, we explain why the glass transition induced by freezing particles provides a new and very promising avenue of research to probe the glassy state and ascertain, or disprove, the validity of the theories of the glass transition. PMID:22623524

  19. Dynamic behaviour of FBR fuel pin bundles

    International Nuclear Information System (INIS)

    Martin, P.H.; Van Dorsselaere, J.P.; Ravenet, A.

    1990-01-01

    A programme of shock tests on a fast neutron reactor subassembly model (SPX1 geometry) including a complete bundle of fuel pins (dummy elements) is being carried out in the BELIER test facility at Cadarache. The purpose of these tests is: to determine the distribution of dynamic forces applied to the fuel rod clads under the impact conditions encountered in a reactor during a earthquake; to reduce as much as possible the conservatism of the methods presently used for the calculation of those forces. The test programme, now being completed, consists of the following steps: impacts on the mock-up in air with an non-compact bundle (situation of the subassembly at beginning of life (BOL) with clearances within the bundle); impacts under the same conditions but with fluid (water) in the subassembly; impacts on the mock-up in air and with a compacted bundle (simulating the conditions of an end-of-life (EOL) bundle with no clearance within the bundle). The accelerations studied in these tests cover the range encountered in design calculations for the subassembly frequencies in beam mode. (author)

  20. Transverse pinning versus intramedullary pinning in fifth metacarpal's neck fractures: A randomized controlled study with patient-reported outcome.

    Science.gov (United States)

    Galal, Sherif; Safwat, Wael

    2017-01-01

    The 5th metacarpal fractures accounts for 38% of all hand fractures given that the neck is the weakest point in metacarpals, so neck fracture is the most common metacarpal fracture. Surgical fixation is also advocated for such fractures to prevent mal-rotation of the little finger which will lead to fingers overlap in a clenched fist. Various methods are available for fixation of such fractures, like intramedullary & transverse pinning. There are very few reports in the literature comparing both techniques. Authors wanted to compare outcomes and complications of transverse pinning versus intramedullary pinning in fifth metacarpal's neck fractures. A single-center, parallel group, prospective, randomized study was conducted at an academic Level 1 Trauma Center from October 2014 to December 2016. A total of 80 patients with 5th metacarpal's neck fractures were randomized to pinning using either transverse pinning (group A) or intramedullary pinning (group B). Patients were assessed clinically on range of motion, patient-reported outcome using the Quick-DASH (Disabilities of the Arm, Shoulder, and Hand) questionnaire & radiographically. Two blinded observers assessed outcomes. At final follow up for each patient (12 months) the statistically significant differences were observed in operative time, the transverse pinning group showed shorter operative time, as well as complication rate as complications were observed only in intramedullary pinning group. No differences were found in range of motion or the Quick -DASH score. Both techniques are equally safe and effective treatment option for 5th metacarpal's neck fractures. The only difference was shorter operative time & less incidence of complications in transverse pinning group. Level II, Therapeutic study.

  1. Response of STFZ diode as on-line gamma dosimeter in radiation processing

    International Nuclear Information System (INIS)

    Camargo, Fabio de; Goncalves, Josemary A.C.; Pascoalino, Kelly C.; Bueno, Carmen C.; Tuominen, Eija; Tuovinen, Esa; Haerkoenen, Jaakko

    2009-01-01

    In this work, it is presented the results obtained with this rad-hard STFZ silicon diode as a high-dose gamma dosimeter. This device is a p + /n/n + junction diode, made on FZ Si wafer manufactured by Okmetic Oyj., Vantaa, Finland and processed by the Microelectronics Center of Helsinki University of Technology. The results obtained about the photocurrent registered and total charge accumulated on the diode as a function of the total absorbed dose are presented. The diodes' response showed a significant saturation effect for total absorbed doses higher than approximately 15 kGy. To reduce this effect, some STFZ samples have been pre-irradiated with gamma rays at accumulated dose of 700 kGy in order to saturate the trap production in the diode's sensitive volume. (author)

  2. Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes

    Science.gov (United States)

    Cho, Himchan; Jeong, Su-Hun; Park, Min-Ho; Kim, Young-Hoon; Wolf, Christoph; Lee, Chang-Lyoul; Heo, Jin Hyuck; Sadhanala, Aditya; Myoung, NoSoung; Yoo, Seunghyup; Im, Sang Hyuk; Friend, Richard H.; Lee, Tae-Woo

    2015-12-01

    Organic-inorganic hybrid perovskites are emerging low-cost emitters with very high color purity, but their low luminescent efficiency is a critical drawback. We boosted the current efficiency (CE) of perovskite light-emitting diodes with a simple bilayer structure to 42.9 candela per ampere, similar to the CE of phosphorescent organic light-emitting diodes, with two modifications: We prevented the formation of metallic lead (Pb) atoms that cause strong exciton quenching through a small increase in methylammonium bromide (MABr) molar proportion, and we spatially confined the exciton in uniform MAPbBr3 nanograins (average diameter = 99.7 nanometers) formed by a nanocrystal pinning process and concomitant reduction of exciton diffusion length to 67 nanometers. These changes caused substantial increases in steady-state photoluminescence intensity and efficiency of MAPbBr3 nanograin layers.

  3. Pin failure modeling of the A series CABRI tests

    International Nuclear Information System (INIS)

    Young, M.F.; Portugal, J.L.

    1978-01-01

    The EXPAND pin fialure model, a research tool designed to model pin failure under prompt burst conditions, has been used to predict failure conditions for several of the A series CABRI tests as part of the United States participation in the CABRI Joint Project. The Project is an international program involving France, Germany, England, Japan, and the United States and has the goal of obtaining experimental data relating to the safety of LMFBR's. The A series, designed to simulate high ramp rate TOP conditions, initially utilizes single, fresh UO 2 pins of the PHENIX type in a flowing sodium loop. The pins are preheated at constant power in the CABRI reactor to establish steady state conditions (480 w/cm at the axial peak) and then subjected to a power pulse of 14 ms to 24 ms duration

  4. Progress in fuel pin modelling in the USA

    Energy Technology Data Exchange (ETDEWEB)

    Stephen, J D; Biancheria, A; Leibnitz, D; O' Reilly, B D; Liu, Y Y; Labar, M P; Gneiting, B C [General Electric Company, Sunnyvale, CA (United States)

    1979-12-01

    In the USA, the focus for theoretical fuel pin modeling is the LIFE system. This system of codes, algorithms, criteria and analysis guidelines is intended to provide a common basis for communication amongst the development groups, a reference set of analysis guidelines for design, and eventually a consensus on the state-of-the-art for licensing. The technical objective is to predict the effect of design options on fuel pin performance limits, which include fuel temperature, pin deformation and cladding breach during normal operation and design basis transients. The mechanistic approach to modeling is taken in LIFE to the extent possible. That is, the approach is to describe the key phenomena in sufficient detail to provide a fundamental understanding of their synergistic effect on the fuel pin performance limits.

  5. The treatment of burnable poison pins in LWRWIMS

    International Nuclear Information System (INIS)

    Halsall, M.J.

    1982-12-01

    This report describes an investigation into the modelling approximations normally made when the LWR lattice code LWRWIMS is used for design calculations on assemblies containing burnable poison pins. Parameters investigated include energy group structure, intervals between calculations in MWd/te and spatial subdivision of the poison pins. An estimate is made of the effect of using pin-cell smearing with diffusion theory for the assembly geometry, instead of a more exact heterogeneous transport theory calculation. The influence on reactivity of the minor gadolinium isotopes 152, 154, 156, 158 and 160 in a poison pin dominated by the isotopes 155 and 157 is presented, and finally, recommendations on the use of LWRWIMS for this type of calculation are made. (author)

  6. PIN architecture for ultrasensitive organic thin film photoconductors.

    Science.gov (United States)

    Jin, Zhiwen; Wang, Jizheng

    2014-06-17

    Organic thin film photoconductors (OTFPs) are expected to have wide applications in the field of optical communications, artificial vision and biomedical sensing due to their great advantages of high flexibility and low-cost large-area fabrication. However, their performances are not satisfactory at present: the value of responsivity (R), the parameter that measures the sensitivity of a photoconductor to light, is below 1 AW(-1). We believe such poor performance is resulted from an intrinsic self-limited effect of present bare blend based device structure. Here we designed a PIN architecture for OTFPs, the PIN device exhibits a significantly improved high R value of 96.5 AW(-1). The PIN architecture and the performance the PIN device shows here should represent an important step in the development of OTFPs.

  7. Investigation of pinning in MgB2 superconductors

    International Nuclear Information System (INIS)

    Mohammad, S.; Reissner, M.; Steiner, W.; Bauer, E.; Giovannini, M.

    2006-01-01

    Full text: The pinning behaviour of bulk MgB 2 superconductors is peculiar in many respects. Pinning seems to be stronger than in classical high T C materials and there seems to be no weak link problem in these compounds, giving hope to produce bulk samples and wires with current densities appropriate for technical applications. But, although many studies concerning the pinning behaviour in this compound appeared in recent years, the results are still contradictory. In the present work we present results of an investigation of the pinning behaviour by magnetic relaxation measurements of three MgB 2 samples: a pure one, a sample with 8 at% Al substitution and a sample with 10 wt% of SiC admixture. A comparison of different analyses methods is given. (author)

  8. SP-100 Fuel Pin Performance: Results from Irradiation Testing

    Science.gov (United States)

    Makenas, Bruce J.; Paxton, Dean M.; Vaidyanathan, Swaminathan; Marietta, Martin; Hoth, Carl W.

    1994-07-01

    A total of 86 experimental fuel pins with various fuel, liner, and cladding candidate materials have been irradiated in the Experimental Breeder Reactor-II (EBR-II) and the Fast Flux Test Facility (FFTF) reactor as part of the SP-100 fuel pin irradiation testing program. Postirradiation examination results from these fuel pins are key in establishing performance correlations and demonstrating the lifetime and safety of the reactor fuel system. This paper provides a brief description of the in-reactor fuel pin tests and presents the most recent irradiation data on the performance of wrought rhenium (Re) liner material and high density UN fuel at goal burnup of 6 atom percent (at. %). It also provides an overview of the significant variety of other fuel/liner/cladding combinations which were irradiated as part of this program and which may be of interest to more advanced efforts.

  9. Irradiation project of SiC/SiC fuel pin 'INSPIRE': Status and future plan

    International Nuclear Information System (INIS)

    Kohyama, Akira; Kishimoto, Hirotatsu

    2015-01-01

    After the March 11 Disaster in East-Japan, Research and Development towards Ensuring Nuclear Safety Enhancement for LWR becomes a top priority R and D in nuclear energy policy of Japan. The role of high temperature non-metallic materials, such as SiC/SiC, is becoming important for the advanced nuclear reactor systems. SiC fibre reinforced SiC composite has been recognised to be the most attractive option for the future, now, METI fund based project, INSPIRE, has been launched as 5-year termed project at OASIS in Muroran Institute of Technology aiming at early realisation of this system. INSPIRE is the irradiation project of SiC/SiC fuel pins aiming to accumulate material, thermal, irradiation effect data of NITE-SiC/SiC in BWR environment. Nuclear fuel inserted SiC/SiC fuel pins are planned to be installed in the Halden reactor. The project includes preparing the NITE-SiC/SiC tubes, joining of end caps, preparation of rigs to control the irradiation environment to BWR condition and the instruments to measure the condition of rigs and pins in operation. Also, basic neutron irradiation data will be accumulated by SiC/SiC coupon samples currently under irradiation in BR2. The output from this project may present the potentiality of NITE-SiC/SiC fuel cladding with the first stage fuel-cladding interaction. (authors)

  10. Behavior of a bundle of fast fuel pins under irradiation

    International Nuclear Information System (INIS)

    Marbach, G.; Millet, P.; Robert, J.; Languille, A.

    1979-01-01

    In the French design of fuel elements for fast reactors, great deformation of pins can bring about interaction with the hexagonal tube through the spacer wires. The change in such bundles is described here when the diameter of the cladding increases and the outcome of this reaction (bending and ovalization of pins) is calculated with a simplified model. It is shown that the results achieved agree well with the experimental observations [fr

  11. Pin and roller attachment system for ceramic blades

    Science.gov (United States)

    Shaffer, J.E.

    1995-07-25

    In a turbine, a plurality of blades are attached to a turbine wheel by way of a plurality of joints which form a rolling contact between the blades and the turbine wheel. Each joint includes a pin and a pair of rollers to provide rolling contact between the pin and an adjacent pair of blades. Because of this rolling contact, high stress scuffing between the blades and the turbine wheel reduced, thereby inhibiting catastrophic failure of the blade joints. 3 figs.

  12. Cyclic movement pin mechanism for controlling a nuclear reactor

    International Nuclear Information System (INIS)

    Joly, J.G.; Martin, Jean.

    1981-01-01

    This invention concerns a recurring movement pin mechanism for controlling a nuclear reactor by shifting a neutron absorbing assembly, vertically mobile in the nuclear reactor, to adjust the power and for emergency shut-down. This mechanism ensures a continuous movement and accurate shut-down at any level of the travel height of the absorbing assembly in the core. It also prevents the impacts of the pivoting pins in the control rod slots [fr

  13. Theory of activated glassy dynamics in randomly pinned fluids

    Science.gov (United States)

    Phan, Anh D.; Schweizer, Kenneth S.

    2018-02-01

    We generalize the force-level, microscopic, Nonlinear Langevin Equation (NLE) theory and its elastically collective generalization [elastically collective nonlinear Langevin equation (ECNLE) theory] of activated dynamics in bulk spherical particle liquids to address the influence of random particle pinning on structural relaxation. The simplest neutral confinement model is analyzed for hard spheres where there is no change of the equilibrium pair structure upon particle pinning. As the pinned fraction grows, cage scale dynamical constraints are intensified in a manner that increases with density. This results in the mobile particles becoming more transiently localized, with increases of the jump distance, cage scale barrier, and NLE theory mean hopping time; subtle changes of the dynamic shear modulus are predicted. The results are contrasted with recent simulations. Similarities in relaxation behavior are identified in the dynamic precursor regime, including a roughly exponential, or weakly supra-exponential, growth of the alpha time with pinning fraction and a reduction of dynamic fragility. However, the increase of the alpha time with pinning predicted by the local NLE theory is too small and severely so at very high volume fractions. The strong deviations are argued to be due to the longer range collective elasticity aspect of the problem which is expected to be modified by random pinning in a complex manner. A qualitative physical scenario is offered for how the three distinct aspects that quantify the elastic barrier may change with pinning. ECNLE theory calculations of the alpha time are then presented based on the simplest effective-medium-like treatment for how random pinning modifies the elastic barrier. The results appear to be consistent with most, but not all, trends seen in recent simulations. Key open problems are discussed with regard to both theory and simulation.

  14. Electro-thermal analysis and optimisation of edge termination of power diode supported by 2-D/3-D numerical modelling and simulation

    International Nuclear Information System (INIS)

    Príbytný, P; Donoval, D; Chvála, A; Marek, J; Molnár, M

    2014-01-01

    Numerical modelling and simulation provide an efficient tool for analysis and optimization of device structure design. In this paper we present the analysis and the geometry optimization of the power module with high power pin diode structure supported by the advanced 2-D/3-D mixed-mode electro-thermal device simulation. The structure under investigation is P + NN + power diode device designed for high reverse voltages and very high forward currents, with a maximum forward surge current up to 2.7 kA.

  15. Calibration of the OPAL jet chamber with UV laser beams. Measurement of the beam position with position-sensitive silicon diodes (PSD)

    International Nuclear Information System (INIS)

    Koch, J.

    1990-03-01

    The OPAL jet chamber is calibrated with tracks produced by UV laser beams. Lateral effect diodes are used for monitoring the laser beam location in the detector. These position sensitive detectors locate the point of impact in two dimensions by the charge division method. Measurements on several diodes were carried out in order to calibrate these devices and to investigate to observed pin-cushion distortion. Using the telegraphers equation suitable expressions were obtained for describing the observed behaviour. It was shown that the magnetic field of OPAL as well as the UV laser wavelength and puls duration had no influence on the position information. (orig.)

  16. Incidence and risk factors for pin tract infection in external fixation of ...

    African Journals Online (AJOL)

    Incidence and risk factors for pin tract infection in external fixation of fractures ... for pin tract infection, there were 93 pins scored grade 1, 32 pins grade 2, 15 ... The incidence increased from 20.5% in closed fractures to 75.9% in open fractures.

  17. Vortex Avalanches with Periodic Arrays of Pinning Sites

    Science.gov (United States)

    Abbas, J.; Heckel, T.; Kakalios, J.

    2001-03-01

    Numerical simulations by Nori and co-workers of dynamical phase transitions for magnetic vortices in type II superconductors when the defects which act as pinning sites are arranged in a periodic array have found a dramatic non-linear relationship between vortex voltage and driving current.2,4 In order to experimentally test the predictions of these simulations, a macroscopic physical analog of an array of flux vortices in the presense of an ordered lattice of pinning sites has been constructed. This simple table-top experimental system consists of conventional household magnets, arranged in an ordered grid (serving as the lattice of fixed pinning centers). A plexiglass sheet is positioned above these fixed magnets, and another collection of magnets (representing the magnetic flux vortices), oriented so that they are attracted to the fixed magnets are placed on top of the sheet. The entire apparatus is then tilted to a given angle (the analog of the driving voltage) and the velocity of the avalanching magnets is recorded using the induced voltage in a pick-up coil. By varying the ratio of movable magnets to fixed pinning magnets, the filling fraction can be adjusted, as can the pinning strength, by adjusting the separation of the plexiglass sheet between the fixed and movable magnets. The velocity of the avalanching magnets as the filling fraction is varied displays a jamming transition, with a non-trivial dependence on the pinning strength of the lattice of fixed magnets below the sheet.

  18. JMCT Monte Carlo simulation analysis of full core PWR Pin-By-Pin and shielding

    International Nuclear Information System (INIS)

    Deng, L.; Li, G.; Zhang, B.; Shangguan, D.; Ma, Y.; Hu, Z.; Fu, Y.; Li, R.; Hu, X.; Cheng, T.; Shi, D.

    2015-01-01

    This paper describes the application of the JMCT Monte Carlo code to the simulation of Kord Smith Challenge H-M model, BEAVRS model and Chinese SG-III model. For H-M model, the 6.3624 millions tally regions and the 98.3 billion neutron histories do. The detailed pin flux and energy deposition densities obtain. 95% regions have less 1% standard deviation. For BEAVRS model, firstly, we performed the neutron transport calculation of 398 axial planes in the Hot Zero Power (HZP) status. Almost the same results with MC21 and OpenMC results are achieved. The detailed pin-power density distribution and standard deviation are shown. Then, we performed the calculation of ten depletion steps in 30 axial plane cases. The depletion regions exceed 1.5 million and 12,000 processors uses. Finally, the Chinese SG-III laser model is simulated. The neutron and photon flux distributions are given, respectively. The results show that the JMCT code well suits for extremely large reactor and shielding simulation. (author)

  19. A polygonal nodal SP3 method for whole core Pin-by-Pin neutronics calculation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yunzhao; Wu, Hongchun; Cao, Liangzhi, E-mail: xjtulyz@gmail.com, E-mail: hongchun@mail.xjtu.edu.cn, E-mail: caolz@mail.xjtu.edu.cn [School of Nuclear Science and Technology, Xi' an Jiaotong University, Shaanxi (China)

    2011-07-01

    In this polygonal nodal-SP3 method, neutron transport equation is transformed by employing an isotropic SP3 method into two coupled equations that are both in the same mathematic form with the diffusion equation, and then a polygonal nodal method is proposed to solve the two coupled equations. In the polygonal nodal method, adjacent nodes are coupled through partial currents, and a nodal response matrix between incoming and outgoing currents is obtained by expanding detailed nodal flux distribution into a sum of exponential functions. This method avoids the transverse integral technique, which is widely used in regular nodal method and can not be used in triangular geometry because of the mathematical singularity. It is demonstrated by the numerical results of the test problems that the k{sub eff} and power distribution agree well with other codes, the triangular nodal-SP3 method appears faster, and that whole core pin-by-pin transport calculation with fine meshes is feasible after parallelization and acceleration. (author)

  20. Development of modeling tools for pin-by-pin precise reactor simulation

    International Nuclear Information System (INIS)

    Ma Yan; Li Shu; Li Gang; Zhang Baoyin; Deng Li; Fu Yuanguang

    2013-01-01

    In order to develop large-scale transport simulation and calculation method (such as simulation of whole reactor core pin-by-pin problem), the Institute of Applied Physics and Computational Mathematics developed the neutron-photon coupled transport code JMCT and the toolkit JCOGIN. Creating physical calculation model easily and efficiently can essentially reduce problem solving time. Currently, lots of visual modeling programs have been developed based on different CAD systems. In this article, the developing idea of a visual modeling tool based on field oriented development was introduced. Considering the feature of physical modeling, fast and convenient operation modules were developed. In order to solve the storage and conversion problems of large scale models, the data structure and conversional algorithm based on the hierarchical geometry tree were designed. The automatic conversion and generation of physical model input file for JMCT were realized. By using this modeling tool, the Dayawan reactor whole core physical model was created, and the transformed file was delivered to JMCT for transport calculation. The results validate the correctness of the visual modeling tool. (authors)

  1. Repeat biopsy in patients with initial diagnosis of PIN; La biopsia ripetuta nei pazienti con diagnosi iniziale di PIN

    Energy Technology Data Exchange (ETDEWEB)

    De Matteis, Massimo [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Radiologia Albertoni; Poggi, Cristina; De Martino, Antonietta; Pavlica, Pietro [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Radiologia Palagi, Dipartimento area radiologica; Corti, Barbara [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Anatomia ed istologia patologica, Dipartimento oncologico ed ematologico; Barozzi, Libero [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Radiologia d' urgenza, Dipartimento emergenze ed accettazione

    2005-09-15

    Purpose. Prostatic intra-epithelial neoplasia (PIN) is considered a pre-malignant lesion and the main precursor of invasive prostatic adenocarcinoma. A PIN diagnosis established by prostate needle biopsy poses a difficult clinical management. problem. We retrospectively reviewed our three-year experience in order to identify criteria for referring patients to repeat biopsy. Materials and methods. We reviewed the repeat biopsy records of 72 patients in whom PIN had been detected on initial US-guided needle biopsy of the prostate. All the patients had a minimum of 6 biopsy cores taken, and they all had PSA > 4 ng/ml. Results. Adenocarcinoma was detected in 15 patients out of 50 (30%) with an initial diagnosis of low-grade PIN and in 10 patients out of 22 (45.4%) with high grade PIN, in 7 out of 18 (39%) in whom PSA levels had decreased during the observation interval, in 16 patients out of 46 (35%) in whom the PSA had increased and in 2 patients out of 8 (25%) with stable PSA. Conclusions. Our results seem to confirm that PIN can be considered a precursor of prostatic adenocarcinoma or a histological alteration often associated with it. Patients with low-grade PIN and particularly those with high-grade PIN should be regularly subjected to repeat biopsy at short intervals due to the high frequency of the final diagnosis of carcinoma. No agreement has been reached on the time interval between the first and the second biopsy. The PSA changes during the observation period are not a statistically significant parameter to suggest the repetition of prostatic biopsy. [Italian] Scopo. La neoplasia prostatica intraepiteliale (PIN) e considerata una lesione premaligna ed il precursore principale dell'adenocarcinoma prostatico infiltrante. La diagnosi di PIN ottenuta con l'agobiopsia della prostata rappresenta un difficile problema gestionale clinico. In una valutazione retrospettiva della nostra esperienza di 3 anni si e cercato di individuare i criteri che possano

  2. Electrical performance of GaN diode as betavoltaic isotope battery energy converter

    International Nuclear Information System (INIS)

    Wang Guanquan; Yang Yuqing; Liu Yebing; Hu Rui; Li Hao; Zhong Zhengkun; Luo Shunzhong

    2013-01-01

    Two kinds of GaN PiN diodes were prepared to be the energy converters of betavoltaic batteries, and irradiated by 63 Ni and 3 H radioactive sources. The I sc was 5.4 nA and V oc was 771 mV for 63 Ni source; the I sc was 10.8 nA and V oc was 839 mV for 3 H source. These results show that their V oc are far better than silicon diodes', but their I sc are poor. And there are some differences between the theory values and experiment results. There would be greatly improving space in electrical performance of beta voltaic isotope batteries with GaN diodes as the energy converters, if the dislocation could be reduced in GaN material producing process, the Ohmic contact could be prepared very well and the diodes configuration could be designed more optimizedly in the future. (authors)

  3. Interplay between collective pinning and artificial defects on domain wall propagation in Co/Pt multilayers

    International Nuclear Information System (INIS)

    Rodriguez-Rodriguez, G; Hierro-Rodriguez, A; Perez-Junquera, A; Montenegro, N; Alameda, J M; Velez, M; Menendez, J L; Ravelosona, D

    2010-01-01

    The interplay between collective pinning on intrinsic structural defects and artificial pinning at a patterned hole is studied in magnetic multilayers with perpendicular anisotropy. The pinning strength of a patterned hole is measured through its efficiency to stop domain wall (DW) propagation into a consecutive unpatterned nanowire section (using antisymmetric magnetoresistance to detect the direction of DW propagation) whereas collective pinning is characterized by the field dependence of DW velocity. Close to room temperature, collective pinning becomes weaker than artificial pinning so that pinning at the hole compensates nucleation-pad geometry, blocking DW propagation across the nanowire.

  4. Fuel pin bowing and related investigation of WWER-440 control rod influence on power release inside of neighbouring fuel pins

    International Nuclear Information System (INIS)

    Mikus, J.

    2005-01-01

    The purpose of this work consists in investigation of the WWER-440 control rod (CR) influence on space power distribution, especially from viewpoint of the values and gradient occurrence that could result in static and cyclic loads with some consequences, e.g. fuel pin bowing. As known, CR can cause power peaks in periphery fuel pins of adjacent operating assemblies because of the butt joint design of the absorbing adapter to the CR fuel part, that is, presence of the water cavity resulting in a flash up of thermal neutrons. As a consequence, beside well-known peaks in axial power distribution, above power gradients can occur inside of mentioned fuel pins. Because of complicated geometry and material composition of the CR, the detailed calculations concerning both above phenomena are complicated, too. Therefore it is useful to acquire appropriate experimental data to investigate mentioned influence and compare them with calculations. Since detailed power distributions cannot be obtained in the NPP, needed information is provided by means of experiments on research reactors. In case of measurements inside of fuel pins, special (e.g. track) detectors placed between fuel pellets are used. Such works are relatively complicated and time consuming, therefore an evaluation based on mathematical modelling and numerical approximation was proposed by means of that, and using measured power release in some selected fuel pins, information about power release inside of one of these fuel pins, can be obtained. For this purpose, an experiment on light water, zero-power research reactor LR-0 was realized and axial power distribution measurements were performed in a WWER-440 type core near to an authentic CR model. Application of the above evaluation method is demonstrated on one ''investigated'' fuel pin neighbouring CR by means of following results: 1. Axial power distribution inside of investigated fuel pin in two opposite positions on its pellets surface that are situated to

  5. Studies of cold protection diodes

    International Nuclear Information System (INIS)

    Carcagno, R.; Zeigler, J.

    1990-01-01

    The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current IV measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 14 refs., 8 figs., 2 tabs

  6. Studies of cold protection diodes

    International Nuclear Information System (INIS)

    Carcagno, R.; Zeigler, J.

    1990-03-01

    The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current 4 measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 11 refs., 8 figs., 2 tabs

  7. Complications after pinning of supracondylar distal humerus fractures.

    Science.gov (United States)

    Bashyal, Ravi K; Chu, Jennifer Y; Schoenecker, Perry L; Dobbs, Matthew B; Luhmann, Scott J; Gordon, J Eric

    2009-01-01

    Supracondylar distal humerus fractures are one of the most common skeletal injuries in children. The current treatment of choice in North America is closed reduction and percutaneous pin fixation. Often surgeons leave the pins exposed beneath a cast but outside the skin. Great variation exists with respect to preoperative skin preparation, and perioperative antibiotic administration. Few data exist regarding the rate of infection and other complications. The purpose of this study is to review a large series of children to evaluate the rate of infection and other complications. A retrospective review was carried out of all patients treated at our institution over an 11-year period. A total of 622 patients were identified that were followed for a minimum of 2 weeks after pin removal. Seventeen patients had flexion-type fractures, 294 had type II fractures, and 311 had type III fractures. Seventy-four fractures (11.9%) had preoperative nerve deficits with anterior interosseous palsies being the most common (33 fractures, 5.3%). Preoperative antibiotics were given to 163 patients (26.2%). Spray and towel draping were used in 362 patients, paint and towel draping were used in 65 patients, alcohol paint and towel draping were used in 146 patients, and a full preparation and draping were used in 13 patients. The pins were left exposed under the cast in 591 fractures (95%), and buried beneath the skin in 31 fractures (5.0%). A medial pin was placed in 311 fractures with a small incision made to aid placement in 18 of these cases. The most common complication was pin migration necessitating unexpected return to the operating room for pin removal in 11 patients (1.8%). One patient developed a deep infection with septic arthritis and osteomyelitis (0.2%). Five additional patients had superficial skin infections and were treated with oral antibiotics for a total infection rate of 6 of 622 patients (1.0%). One patient ultimately had a malunion and 4 others returned to the

  8. High-performance whole core Pin-by-Pin calculation based on EFEN-SP_3 method

    International Nuclear Information System (INIS)

    Yang Wen; Zheng Youqi; Wu Hongchun; Cao Liangzhi; Li Yunzhao

    2014-01-01

    The EFEN code for high-performance PWR whole core pin-by-pin calculation based on the EFEN-SP_3 method can be achieved by employing spatial parallelization based on MPI. To take advantage of the advanced computing and storage power, the entire problem spatial domain can be appropriately decomposed into sub-domains and the assigned to parallel CPUs to balance the computing load and minimize communication cost. Meanwhile, Red-Black Gauss-Seidel nodal sweeping scheme is employed to avoid the within-group iteration deterioration due to spatial parallelization. Numerical results based on whole core pin-by-pin problems designed according to commercial PWRs demonstrate the following conclusions: The EFEN code can provide results with acceptable accuracy; Communication period impacts neither the accuracy nor the parallel efficiency; Domain decomposition methods with smaller surface to volume ratio leads to greater parallel efficiency; A PWR whole core pin-by-pin calculation with a spatial mesh 289 × 289 × 218 and 4 energy groups could be completed about 900 s by using 125 CPUs, and its parallel efficiency is maintained at about 90%. (authors)

  9. Laser Diode Beam Basics, Manipulations and Characterizations

    CERN Document Server

    Sun, Haiyin

    2012-01-01

    Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

  10. Comparison of the effect of diode laser versus intense pulsed light in axillary hair removal.

    Science.gov (United States)

    Ormiga, Patricia; Ishida, Cleide Eiko; Boechat, Alvaro; Ramos-E-Silva, Marcia

    2014-10-01

    Devices such as diode laser and intense pulsed light (IPL) are in constant development aiming at permanent hair removal, but there are few comparative studies between these technologies. The objective was to comparatively assess axillary hair removal performed by diode laser and IPL and to obtain parameters of referred pain and evolution response for each method. A comparative prospective, double-blind, and randomized study of axillary hair removal performed by the diode laser and IPL was conducted in 21 females. Six sessions were held with application of the diode laser in one axilla and the IPL in the other, with intervals of 30 days and follow-up of 6 months after the last session. Clinical photographs and digital dermoscopy for hair counts in predefined and fixed fields of the treated areas were performed before, 2 weeks after the sixth session, and 6 months after the end of treatment. A questionnaire to assess the pain was applied. The number of hair shafts was significantly reduced with the diode laser and IPL. The diode laser was more effective, although more painful than the IPL. No serious, adverse, or permanent effects were observed with both technologies. Both diode laser and the IPL are effective, safe, and able to produce lasting results in axillary hair removal.

  11. Multilevel parallel strategy on Monte Carlo particle transport for the large-scale full-core pin-by-pin simulations

    International Nuclear Information System (INIS)

    Zhang, B.; Li, G.; Wang, W.; Shangguan, D.; Deng, L.

    2015-01-01

    This paper introduces the Strategy of multilevel hybrid parallelism of JCOGIN Infrastructure on Monte Carlo Particle Transport for the large-scale full-core pin-by-pin simulations. The particle parallelism, domain decomposition parallelism and MPI/OpenMP parallelism are designed and implemented. By the testing, JMCT presents the parallel scalability of JCOGIN, which reaches the parallel efficiency 80% on 120,000 cores for the pin-by-pin computation of the BEAVRS benchmark. (author)

  12. Quantitative Detection of Combustion Species using Ultra-Violet Diode Lasers

    Science.gov (United States)

    Pilgrim, J. S.; Peterson, K. A.

    2001-01-01

    Southwest Sciences is developing a new microgravity combustion diagnostic based on UV diode lasers. The instrument will allow absolute concentration measurements of combustion species on a variety of microgravity combustion platforms including the Space Station. Our approach uses newly available room temperature UV diode lasers, thereby keeping the instrument compact, rugged and energy efficient. The feasibility of the technique was demonstrated by measurement of CH radicals in laboratory flames. Further progress in fabrication technology of UV diode lasers at shorter wavelengths and higher power will result in detection of transient species in the deeper UV. High sensitivity detection of combustion radicals is provided with wavelength modulation absorption spectroscopy.

  13. Fuel pin response to an overpower transient in an LMFBR

    International Nuclear Information System (INIS)

    Grosberg, A.J.; Head, J.L.

    1979-01-01

    This paper describes a method by which the ability of a whole-core code accurately to predict the time and location of the first fuel pin failures may be tested. The method involves the use of a relatively simple whole-core code to 'drive' a sophisticated fuel pin code, which is far too complex to be used within a whole-core code but which is potentially capable of modelling reliably the response of an individual fuel pin. The method cannot follow accurately the subsequent course of the transient because the simple whole-core code does not model the reactivity effects of events which may follow pin failure. The codes used were the simple whole-core code FUTURE and the fuel pin behaviour code FRUMP. The paper describes an application of the method to analyse a hypothetical LMFBR accident in which the control rods were assumed to be driven from the core at maximum speed, with all trip circuits failed. Taking 0.5% clad strain as a clad failure criterion, failure was predicted to occur at the top of the active core at about 10s into the transient. A repeat analysis, using an alternative clad yield criterion which is thought to be more realistic, indicated failure at the same position but 24s into the transient. This is after the onset of sodium boiling. Pin failure at the top of the core are likely to cause negative reactivity changes. In this hypothetical accident, pin failures are likely, therefore, to have a moderating effect on the course of the transient. (orig.)

  14. Few-photon optical diode

    OpenAIRE

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

  15. Wideband 4-diode sampling circuit

    Science.gov (United States)

    Wojtulewicz, Andrzej; Radtke, Maciej

    2016-09-01

    The objective of this work was to develop a wide-band sampling circuit. The device should have the ability to collect samples of a very fast signal applied to its input, strengthen it and prepare for further processing. The study emphasizes the method of sampling pulse shaping. The use of ultrafast pulse generator allows sampling signals with a wide frequency spectrum, reaching several gigahertzes. The device uses a pulse transformer to prepare symmetrical pulses. Their final shape is formed with the help of the step recovery diode, two coplanar strips and Schottky diode. Made device can be used in the sampling oscilloscope, as well as other measurement system.

  16. Alpha particles spectrometer with photodiode PIN; Espectrometro de particulas alfa con fotodiodo PIN

    Energy Technology Data Exchange (ETDEWEB)

    Chacon R, A.; Hernandez V, R.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidades Academicas de Estudios Nucleares e Ingenieria Electrica, Calle Cipres No. 10, Fracc. La Penuela, 09869 Zacatecas (Mexico); Ramirez G, J. [Instituto Nacional de Estadistica Geografia e Informatica, Direccion General de Innovacion y Tecnologia de Informacion, Av. Heroes de Nacozari Sur 2301, Fracc. Jardines del Parque, 20276 Aguascalientes (Mexico)], e-mail: achruiz@hotmail.com

    2009-10-15

    The radiation propagates in form of electromagnetic waves or corpuscular radiation; if the radiation energy causes ionization in environment that crosses it is considered ionizing radiation. To detect radiation several detectors types are used, if the radiation are alpha particles are used detectors proportional type or trace elements. In this work the design results, construction and tests of an alpha particles spectrometer are presented, which was designed starting from a photodiode PIN type. The system design was simulated with a code for electronic circuits. With results of simulation phase was constructed the electronic phase that is coupled to a multichannel analyzer. The resulting electronic is evaluated analyzing the electronic circuit performance before an alphas triple source and alpha radiation that produce two smoke detectors of domestic use. On the tests phase we find that the system allows obtain, in a multichannel, the pulses height spectrum, with which we calibrate the system. (Author)

  17. PinAPL-Py: A comprehensive web-application for the analysis of CRISPR/Cas9 screens.

    Science.gov (United States)

    Spahn, Philipp N; Bath, Tyler; Weiss, Ryan J; Kim, Jihoon; Esko, Jeffrey D; Lewis, Nathan E; Harismendy, Olivier

    2017-11-20

    Large-scale genetic screens using CRISPR/Cas9 technology have emerged as a major tool for functional genomics. With its increased popularity, experimental biologists frequently acquire large sequencing datasets for which they often do not have an easy analysis option. While a few bioinformatic tools have been developed for this purpose, their utility is still hindered either due to limited functionality or the requirement of bioinformatic expertise. To make sequencing data analysis of CRISPR/Cas9 screens more accessible to a wide range of scientists, we developed a Platform-independent Analysis of Pooled Screens using Python (PinAPL-Py), which is operated as an intuitive web-service. PinAPL-Py implements state-of-the-art tools and statistical models, assembled in a comprehensive workflow covering sequence quality control, automated sgRNA sequence extraction, alignment, sgRNA enrichment/depletion analysis and gene ranking. The workflow is set up to use a variety of popular sgRNA libraries as well as custom libraries that can be easily uploaded. Various analysis options are offered, suitable to analyze a large variety of CRISPR/Cas9 screening experiments. Analysis output includes ranked lists of sgRNAs and genes, and publication-ready plots. PinAPL-Py helps to advance genome-wide screening efforts by combining comprehensive functionality with user-friendly implementation. PinAPL-Py is freely accessible at http://pinapl-py.ucsd.edu with instructions and test datasets.

  18. Generation of clusters in complex dynamical networks via pinning control

    International Nuclear Information System (INIS)

    Li Kezan; Fu Xinchu; Small, Michael

    2008-01-01

    Many real-world networks show community structure, i.e., groups (or clusters) of nodes that have a high density of links within them but with a lower density of links between them. In this paper, by applying feedback injections to a fraction of network nodes, various clusters are synchronized independently according to the community structure generated by the group partition of the network (cluster synchronization). This control is achieved by pinning (i.e. applying linear feedback control) to a subset of the network nodes. Those pinned nodes are selected not randomly but according to the topological structure of communities of a given network. Specifically, for a given group partition of a network, those nodes with direct connections between groups must be pinned in order to achieve cluster synchronization. Both the local stability and global stability of cluster synchronization are investigated. Taking the tree-shaped network and the most modular network as two particular examples, we illustrate in detail how the pinning strategy influences the generation of clusters. The simulations verify the efficiency of the pinning schemes used in this paper

  19. A Flux-Pinning Mechanism for Segment Assembly and Alignment

    Science.gov (United States)

    Gersh-Range, Jessica A.; Arnold, William R.; Peck, Mason A.; Stahl, H. Philip

    2011-01-01

    Currently, the most compelling astrophysics questions include how planets and the first stars formed and whether there are protostellar disks that contain large organic molecules. Although answering these questions requires space telescopes with apertures of at least 10 meters, such large primaries are challenging to construct by scaling up previous designs; the limited capacity of a launch vehicle bounds the maximum diameter of a monolithic primary, and beyond a certain size, deployable telescopes cannot fit in current launch vehicle fairings. One potential solution is connecting the primary mirror segments edgewise using flux-pinning mechanisms, which are analogous to non-contacting damped springs. In the baseline design, a flux-pinning mechanism consists of a magnet and a superconductor separated by a predetermined gap, with the damping adjusted by placing aluminum near the interface. Since flux pinning is possible only when the superconductor is cooled below a critical temperature, flux-pinning mechanisms are uniquely suited for cryogenic space telescopes. By placing these mechanisms along the edges of the mirror segments, a primary can be built up over time. Since flux pinning requires no mechanical deployments, the assembly process could be robotic or use some other non-contacting scheme. Advantages of this approach include scalability and passive stability.

  20. Pin1 and neurodegeneration: a new player for prion disorders?

    Directory of Open Access Journals (Sweden)

    Elisa Isopi

    2015-07-01

    Full Text Available Pin1 is a peptidyl-prolyl isomerase that catalyzes the cis/trans conversion of phosphorylated proteins at serine or threonine residues which precede a proline. The peptidyl-prolyl isomerization induces a conformational change of the proteins involved in cell signaling process. Pin1 dysregulation has been associated with some neurodegenerative disorders such as Alzheimer's disease, Parkinson's disease and Huntington's disease. Proline-directed phosphorylation is a common regulator of these pathologies and a recent work showed that it is also involved in prion disorders. In fact, prion protein phosphorylation at the Ser-43-Pro motif induces prion protein conversion into a disease-associated form. Furthermore, phosphorylation at Ser-43-Pro has been observed to increase in the cerebral spinal fluid of sporadic Creutzfeldt-Jakob Disease patients. These findings provide new insights into the pathogenesis of prion disorders, suggesting Pin1 as a potential new player in the disease. In this paper, we review the mechanisms underlying Pin1 involvement in the aforementioned neurodegenerative pathologies focusing on the potential role of Pin1 in prion disorders.

  1. Exchange anisotropy pinning of a standing spin-wave mode

    Science.gov (United States)

    Magaraggia, R.; Kennewell, K.; Kostylev, M.; Stamps, R. L.; Ali, M.; Greig, D.; Hickey, B. J.; Marrows, C. H.

    2011-02-01

    Standing spin waves in a thin film are used as sensitive probes of interface pinning induced by an antiferromagnet through exchange anisotropy. Using coplanar waveguide ferromagnetic resonance, pinning of the lowest energy spin-wave thickness mode in Ni80Fe20/Ir25Mn75 exchange-biased bilayers was studied for a range of Ir25Mn75 thicknesses. We show that pinning of the standing mode can be used to amplify, relative to the fundamental resonance, frequency shifts associated with exchange bias. The shifts provide a unique “fingerprint” of the exchange bias and can be interpreted in terms of an effective ferromagnetic film thickness and ferromagnet-antiferromagnet interface anisotropy. Thermal effects are studied for ultrathin antiferromagnetic Ir25Mn75 thicknesses, and the onset of bias is correlated with changes in the pinning fields. The pinning strength magnitude is found to grow with cooling of the sample, while the effective ferromagnetic film thickness simultaneously decreases. These results suggest that exchange bias involves some deformation of magnetic order in the interface region.

  2. Automation of FBTR fuel pin inspection using FPGA

    International Nuclear Information System (INIS)

    Khare, K.M.; Pai, Siddhesh; Pant, Brijesh; Sendhil Raja, S.; Gupta, P.K.

    2011-01-01

    A non-contact metrology system for inspection of FBTR fuel pins has been developed. The system consists of a stepper motors driven mechanism for orientation and positioning of FBTR fuel pin, a telecentric imaging system, absolute linear encoder with 0.1 μm resolution and a Field Programmable Gate Array (FPCA) based controller. The FBTR pin assembly is telecentrically illuminated from bottom by a red LED and its shadow graph is imaged using a CCD camera through telecentric imaging lens system. For system control and automation we have used a FPGA that has integrated soft picoblaze processor, X-θ axis motion controller, custom IPs for encoder data acquisition, synchronization circuit, RS485 interface along with other l/Os. Using the Graphical User Interface (GUI) on a PC the system is initialized at home position and the controller provides the trigger signal for start of data acquisition of CCD camera. CCD image of pin and the corresponding X-θ information is captured. After the acquisition of one set of images, the imaging module is moved with a step size pre-programmed to ensure proper stitching of acquired images. The GUI is programmed to analyze these X-θ Images to calculate the required parameters of the fuel pin like the diameter variation, pitch and bow. The details of the instrument and measurements made with it will be presented. (author)

  3. Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

    Energy Technology Data Exchange (ETDEWEB)

    Drummond, T.J.

    1999-03-11

    Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

  4. Performance of electrical contact pins near a nuclear explosion

    International Nuclear Information System (INIS)

    Ragan, C.E.; Silbert, M.G.; Ellis, A.N.; Robinson, E.E.; Daddario, M.J.

    1977-09-01

    The pressures attainable in equation-of-state studies using nuclear-explosion-driven shock waves greatly exceed those that can be reached in normal laboratory conditions. However, the diagnostic instrumentation must survive in the high-radiation environment present near such an explosion. Therefore, a set of experiments were fielded on the Redmud event to test the feasibility of using electrical contact pins in this environment. In these experiments a 60-cm-high shield of boron-lead was placed on the rack lid approximately 1 m from the device. A sample consisting of slabs of molybdenum and 238 U was placed on top of the shield, and twelve electrical contact pins were embedded to five different depths in the materials. Five different multiplexing-charging circuits were used for the pins, and a piezoelectric quartz gauge was placed on top of the uranium to obtain an estimate of the fission-energy deposition. All of the charged pins survived the radiation and produced signals indicating shock arrival. The uncertainty in determining the pin-closure time was approximately 3 ns. The signal from the quartz gauge corresponded to a pressure that was consistent with the calculated neutron fluence

  5. Cluster synchronization for directed community networks via pinning partial schemes

    International Nuclear Information System (INIS)

    Hu Cheng; Jiang Haijun

    2012-01-01

    Highlights: ► Cluster synchronization for directed community networks is proposed by pinning partial schemes. ► Each community is considered as a whole. ► Several novel pinning criteria are derived based on the information of communities. ► A numerical example with simulation is provided. - Abstract: In this paper, we focus on driving a class of directed networks to achieve cluster synchronization by pinning schemes. The desired cluster synchronization states are no longer decoupled orbits but a set of un-decoupled trajectories. Each community is considered as a whole and the synchronization criteria are derived based on the information of communities. Several pinning schemes including feedback control and adaptive strategy are proposed to select controlled communities by analyzing the information of each community such as indegrees and outdegrees. In all, this paper answers several challenging problems in pinning control of directed community networks: (1) What communities should be chosen as controlled candidates? (2) How many communities are needed to be controlled? (3) How large should the control gains be used in a given community network to achieve cluster synchronization? Finally, an example with numerical simulations is given to demonstrate the effectiveness of the theoretical results.

  6. Irradiation of TZM: Uranium dioxide fuel pin at 1700 K

    Science.gov (United States)

    Mcdonald, G. E.

    1973-01-01

    A fuel pin clad with TZM and containing solid pellets of uranium dioxide was fission heated in a static helium-cooled capsule at a maximum surface temperature of 1700 K for approximately 1000 hr and to a total burnup of 2.0 percent of the uranium-235. The results of the postirradiation examination indicated: (1) A transverse, intergranular failure of the fuel pin occurred when the fuel pin reached 2.0-percent burnup. This corresponds to 1330 kW-hr/cu cm, where the volume is the sum of the fuel, clad, and void volumes in the fuel region. (2) The maximum swelling of the fuel pin was less than 1.5 percent on the fuel-pin diameter. (3) There was no visible interaction between the TZM clad and the UO2. (4) Irradiation at 1700 K produced a course-grained structure, with an average grain diameter of 0.02 centimeter and with some of the grains extending one-half of the thickness of the clad. (5) Below approximately 1500 K, the irradiation of the clad produced a moderately fine-grained structure, with an average grain diameter of 0.004 centimeter.

  7. High average power diode pumped solid state lasers for CALIOPE

    International Nuclear Information System (INIS)

    Comaskey, B.; Halpin, J.; Moran, B.

    1994-07-01

    Diode pumping of solid state media offers the opportunity for very low maintenance, high efficiency, and compact laser systems. For remote sensing, such lasers may be used to pump tunable non-linear sources, or if tunable themselves, act directly or through harmonic crystals as the probe. The needs of long range remote sensing missions require laser performance in the several watts to kilowatts range. At these power performance levels, more advanced thermal management technologies are required for the diode pumps. The solid state laser design must now address a variety of issues arising from the thermal loads, including fracture limits, induced lensing and aberrations, induced birefringence, and laser cavity optical component performance degradation with average power loading. In order to highlight the design trade-offs involved in addressing the above issues, a variety of existing average power laser systems are briefly described. Included are two systems based on Spectra Diode Laboratory's water impingement cooled diode packages: a two times diffraction limited, 200 watt average power, 200 Hz multi-rod laser/amplifier by Fibertek, and TRW's 100 watt, 100 Hz, phase conjugated amplifier. The authors also present two laser systems built at Lawrence Livermore National Laboratory (LLNL) based on their more aggressive diode bar cooling package, which uses microchannel cooler technology capable of 100% duty factor operation. They then present the design of LLNL's first generation OPO pump laser for remote sensing. This system is specified to run at 100 Hz, 20 nsec pulses each with 300 mJ, less than two times diffraction limited, and with a stable single longitudinal mode. The performance of the first testbed version will be presented. The authors conclude with directions their group is pursuing to advance average power lasers. This includes average power electro-optics, low heat load lasing media, and heat capacity lasers

  8. MODELING OF MANUFACTURING ERRORS FOR PIN-GEAR ELEMENTS OF PLANETARY GEARBOX

    Directory of Open Access Journals (Sweden)

    Ivan M. Egorov

    2014-11-01

    Full Text Available Theoretical background for calculation of k-h-v type cycloid reducers was developed relatively long ago. However, recently the matters of cycloid reducer design again attracted heightened attention. The reason for that is that such devices are used in many complex engineering systems, particularly, in mechatronic and robotics systems. The development of advanced technological capabilities for manufacturing of such reducers today gives the possibility for implementation of essential features of such devices: high efficiency, high gear ratio, kinematic accuracy and smooth motion. The presence of an adequate mathematical model gives the possibility for adjusting kinematic accuracy of the reducer by rational selection of manufacturing tolerances for its parts. This makes it possible to automate the design process for cycloid reducers with account of various factors including technological ones. A mathematical model and mathematical technique have been developed giving the possibility for modeling the kinematic error of the reducer with account of multiple factors, including manufacturing errors. The errors are considered in the way convenient for prediction of kinematic accuracy early at the manufacturing stage according to the results of reducer parts measurement on coordinate measuring machines. During the modeling, the wheel manufacturing errors are determined by the eccentricity and radius deviation of the pin tooth centers circle, and the deviation between the pin tooth axes positions and the centers circle. The satellite manufacturing errors are determined by the satellite eccentricity deviation and the satellite rim eccentricity. Due to the collinearity, the pin tooth and pin tooth hole diameter errors and the satellite tooth profile errors for a designated contact point are integrated into one deviation. Software implementation of the model makes it possible to estimate the pointed errors influence on satellite rotation angle error and

  9. Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

    Science.gov (United States)

    Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

    2013-08-01

    Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

  10. CMOS Imaging of Temperature Effects on Pin-Printed Xerogel Sensor Microarrays.

    Science.gov (United States)

    Lei Yao; Ka Yi Yung; Chodavarapu, Vamsy P; Bright, Frank V

    2011-04-01

    In this paper, we study the effect of temperature on the operation and performance of a xerogel-based sensor microarrays coupled to a complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC) that images the photoluminescence response from the sensor microarray. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. A correlated double sampling circuit and pixel address/digital control/signal integration circuit are also implemented on-chip. The CMOS imager data are read out as a serial coded signal. The sensor system uses a light-emitting diode to excite target analyte responsive organometallic luminophores doped within discrete xerogel-based sensor elements. As a proto type, we developed a 3 × 3 (9 elements) array of oxygen (O2) sensors. Each group of three sensor elements in the array (arranged in a column) is designed to provide a different and specific sensitivity to the target gaseous O2 concentration. This property of multiple sensitivities is achieved by using a mix of two O2 sensitive luminophores in each pin-printed xerogel sensor element. The CMOS imager is designed to be low noise and consumes a static power of 320.4 μW and an average dynamic power of 624.6 μW when operating at 100-Hz sampling frequency and 1.8-V dc power supply.

  11. Properties of the photodiode PiN as neutron detector

    International Nuclear Information System (INIS)

    Adamiec, G.; Iniguez, M.P.; Lorente, A.; Gallego, E.; Voytchev, M.

    2005-01-01

    The photodiode can be used to measure the ambient dose equivalent for an Am-Be source, as well placed in a paraffin sphere with LiF 6 converter as nude with a PE converter. The ratio between the counting rate and the ambient dose equivalent is linear in the two cases. The sensitivity of the diode with the converter 6 LiF is evaluated to 8.4 shocks by micro sievert by square centimeter of active surface of diode. The photodiode with the PE converter has a sensitivity lower of 2.1 shocks by micro sievert by square centimeter (for the Am-Be source) of active surface of diode. About the disadvantages, the disadvantage of photodiode inside the paraffin sphere is its size and weight; the disadvantage of the diode with the PE converter is its sensitivity to the orientation of the neutron flux and the necessity to calibrate for the source type. (N.C.)

  12. Reirradiation of mixed-oxide fuel pins at increased temperatures

    International Nuclear Information System (INIS)

    Lawrence, L.A.; Weber, E.T.

    1976-05-01

    Mixed-oxide fuel pins from EBR-II irradiations were reirradiated in the General Electric Test Reactor (GETR) at higher temperatures than experienced in EBR-II to study effects of the increased operating temperatures on thermal/mechanical and chemical behavior. The response of a mixed-oxide fuel pin to a power increase after having operated at a lower power for a significant portion of its life-time is an area of performance evaluation where little information currently exists. Results show that the cladding diameter changes resulting from the reirradiation are strongly dependent upon both prior burnup level and the magnitude of the temperature increase. Results provide the initial rough outlines of boundaries within which mixed-oxide fuel pins can or cannot tolerate power increases after substantial prior burnup at lower powers

  13. Pin Tool Geometry Effects in Friction Stir Welding

    Science.gov (United States)

    Querin, J. A.; Rubisoff, H. A.; Schneider, J. A.

    2009-01-01

    In friction stir welding (FSW) there is significant evidence that material can take one of two different flow paths when being displaced from its original position in front of the pin tool to its final position in the wake of the weld. The geometry of the pin tool, along with the process parameters, plays an important role in dictating the path that the material takes. Each flow path will impart a different thermomechanical history on the material, consequently altering the material microstructure and subsequent weld properties. The intention of this research is to isolate the effect that different pin tool attributes have on the flow paths imparted on the FSWed material. Based on published weld tool geometries, a variety of weld tools were fabricated and used to join AA2219. Results from the tensile properties and microstructural characterization will be presented.

  14. Control of Flux Pinning in MOD YBCO Coated Conductor

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, W. [American Superconductor Corporation, Westborough, MA; Huang, Y. [American Superconductor Corporation, Westborough, MA; Li, X. [American Superconductor Corporation, Westborough, MA; Kodenkandath, Thomas [American Superconductor Corporation, Westborough, MA; Rupich, Marty [American Superconductor Corporation, Westborough, MA; Schoop, U. [American Superconductor Corporation, Westborough, MA; Verebelyi, D. T. [American Superconductor Corporation, Westborough, MA; Thieme, C. L. H. [American Superconductor Corporation, Westborough, MA; Siegal, E. E. [American Superconductor Corporation, Westborough, MA; Holesinger, T. G. [Los Alamos National Laboratory (LANL); Maiorov, B. [Los Alamos National Laboratory (LANL); Miller, D. J. [Argonne National Laboratory (ANL); Maroni, V. A. [Argonne National Laboratory (ANL); Goyal, Amit [ORNL; Specht, Eliot D [ORNL; Paranthaman, Mariappan Parans [ORNL

    2007-01-01

    Two different types of defect structures have been identified to be responsible for the enhanced pinning in metal organic deposited YBCO films. Rare earth additions result in the formation of nanodots in the YBCO matrix, which form uncorrelated pinning centers, increasing pinning in all magnetic field orientations. 124-type intergrowths, which form as laminar structures parallel to the ab-plane, are responsible for the large current enhancement when the magnetic field is oriented in the ab-plane. TEM studies showed that the intergrowths emanate from cuprous containing secondary phase particles, whose density is partially controlled by the rare earth doping level. Critical process parameters have been identified to control this phase formation, and therefore, control the f 24 intergrowth formation. This work has shown that through process control and proper conductor design, either by adjusting the composition or by multiple coatings of different functional layers, the desired angular dependence can be achieved.

  15. Control of flux pinning in MOD YBCO coated conductor.

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, W.; Huang, Y.; Li, X.; Kodenkandath, T.; Rupich, M. W.; Schoop, U.; Verebelyi, D. T.; Thieme, C. L. H.; Siegal, E.; Holesinger, T. G.; Maiorov, B.; Civale, L.; Miller, D. J.; Maroni, V. A.; Li, J.; Martin, P. M.; Specht, E. D.; Goyal, A.; Paranthaman, M. P.; American Superconductor Corp.; LANL; ORNL

    2007-06-01

    NTwo different types of defect structures have been identified to be responsible for the enhanced pinning in metal organic deposited YBCO films. Rare earth additions result in the formation of nanodots in the YBCO matrix, which form uncorrelated pinning centers, increasing pinning in all magnetic field orientations. 124-type intergrowths, which form as laminar structures parallel to the ab-plane, are responsible for the large current enhancement when the magnetic field is oriented in the ab-plane. TEM studies showed that the intergrowths emanate from cuprous containing secondary phase particles, whose density is partially controlled by the rare earth doping level. Critical process parameters have been identified to control this phase formation, and therefore, control the f 24 intergrowth formation. This work has shown that through process control and proper conductor design, either by adjusting the composition or by multiple coatings of different functional layers, the desired angular dependence can be achieved.

  16. Practical synchronization on complex dynamical networks via optimal pinning control

    Science.gov (United States)

    Li, Kezan; Sun, Weigang; Small, Michael; Fu, Xinchu

    2015-07-01

    We consider practical synchronization on complex dynamical networks under linear feedback control designed by optimal control theory. The control goal is to minimize global synchronization error and control strength over a given finite time interval, and synchronization error at terminal time. By utilizing the Pontryagin's minimum principle, and based on a general complex dynamical network, we obtain an optimal system to achieve the control goal. The result is verified by performing some numerical simulations on Star networks, Watts-Strogatz networks, and Barabási-Albert networks. Moreover, by combining optimal control and traditional pinning control, we propose an optimal pinning control strategy which depends on the network's topological structure. Obtained results show that optimal pinning control is very effective for synchronization control in real applications.

  17. Symmetric Pin Diversion Detection using a Partial Defect Detector (PDET)

    International Nuclear Information System (INIS)

    Sitaraman, S.; Ham, Y.S.

    2009-01-01

    Since the signature from the Partial Defect Detector (PDET) is principally dependent on the geometric layout of the guide tube locations, the capability of the technique in detecting symmetric diversion of pins needs to be determined. The Monte Carlo simulation study consisted of cases where pins were removed in a symmetric manner and the resulting signatures were examined. In addition to the normalized gamma-to-neutron ratios, the neutron and gamma signatures normalized to their maximum values, were also examined. Examination of the shape of the three curves as well as of the peak-to-valley differences in excess of the maximum expected in intact assemblies, indicated pin diversion. A set of simulations with various symmetric patterns of diversion were examined. The results from these studies indicated that symmetric diversions as low as twelve percent could be detected by this methodology

  18. Flux pinning in La70 Cu30 disordered system

    International Nuclear Information System (INIS)

    Esquinazi, P.; Guillet, B.; Dussell, H.

    1983-09-01

    Superconducting critical currents were measured as a function of a perpendicular applied magnetic field in disordered La 70 Cu 30 . It is shown that the pinning force is very sensitive to inhomogeneties already present in the as quenched samples, although these inhomogeneties have no obvious influence on other superconducting and transport properties. A simple series resistance model is used to explain the magnetic field dependence of the pinning force. A large decrease of the pinning force was obtained for the annealed samples. This behaviour is consistent with the phase separation model that explains the evolution of the superconductive penetration depth. In order to obtain a better characterization of the structural evolution with annealing of the La 70 Cu 30 system, behaviour of the electrical resistivity, superconducting critical temperature and differential thermal analysis were measured. (author)

  19. Component Pin Recognition Using Algorithms Based on Machine Learning

    Science.gov (United States)

    Xiao, Yang; Hu, Hong; Liu, Ze; Xu, Jiangchang

    2018-04-01

    The purpose of machine vision for a plug-in machine is to improve the machine’s stability and accuracy, and recognition of the component pin is an important part of the vision. This paper focuses on component pin recognition using three different techniques. The first technique involves traditional image processing using the core algorithm for binary large object (BLOB) analysis. The second technique uses the histogram of oriented gradients (HOG), to experimentally compare the effect of the support vector machine (SVM) and the adaptive boosting machine (AdaBoost) learning meta-algorithm classifiers. The third technique is the use of an in-depth learning method known as convolution neural network (CNN), which involves identifying the pin by comparing a sample to its training. The main purpose of the research presented in this paper is to increase the knowledge of learning methods used in the plug-in machine industry in order to achieve better results.

  20. FFTF/IEM cell fuel pin weighing system

    International Nuclear Information System (INIS)

    Gibbons, P.W.

    1987-01-01

    The Interim Examination and Maintenance (IEM) cell in the Fast Flux Test Facility (FFTF) is used for remote disassembly of irradiated fuel and materials experiments. For those fuel experiments where the FFTF tag-gas detection system has indicated a fuel pin cladding breach, a weighing system is used in identifying that fuel pin with a reduced weight due to the escape of gaseous and volatile fission products. A fuel pin weighing machine, originally purchased for use in the Fuels and Materials Examination Facility (FMEF), was the basis for the IEM cell system. Design modifications to the original equipment were centered around adapting the machine to the differences between the two facilities and correcting deficiencies discovered during functional testing in the IEM cell mock-up

  1. High power diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Solarz, R.; Albrecht, G.; Beach, R.; Comaskey, B.

    1992-01-01

    Although operational for over twenty years, diode pumped solid state lasers have, for most of their existence, been limited to individual diodes pumping a tiny volume of active medium in an end pumped configuration. More recent years have witnessed the appearance of diode bars, packing around 100 diodes in a 1 cm bar which have enabled end and side pumped small solid state lasers at the few Watt level of output. This paper describes the subsequent development of how proper cooling and stacking of bars enables the fabrication of multi kill average power diode pump arrays with irradiances of 1 kw/cm peak and 250 W/cm 2 average pump power. Since typical conversion efficiencies from the diode light to the pumped laser output light are of order 30% or more, kW average power diode pumped solid state lasers now are possible

  2. Light emitting diodes for today's energy conscious world

    Energy Technology Data Exchange (ETDEWEB)

    Papanier, J

    2000-10-01

    The role played by light emitting diodes in back lighting, decorative illumination, emergency lighting, and automated signage are described as indicators of the many benefits and advantages of LED technology. The basic principles underlying the functioning of LEDs are explained, including the reasons behind their high efficiency in applications requiring colour. The difference between wattage and lumens is clarified; wattage refers to power consumption, whereas lumens measure brightness or light output, the measure most significant in the case of LEDs.

  3. Diode lasers: A magical wand to an orthodontic practice

    Directory of Open Access Journals (Sweden)

    Vipul Kumar Srivastava

    2014-01-01

    Full Text Available LASER (Light Amplification by Stimulated Emission of Radiation is a powerful source of light, which has innumerable applications in all the fields of science including medicine and dentistry. It is one such technology that has become a desirable and an inseparable alternative to many traditional surgical procedures being held in the field of dentistry, and orthodontics is no exception. The current article describes the uses of a diode laser as an indispensable tool in an orthodontic office.

  4. Fabrication of Fast Reactor Fuel Pins for Test Irradiations

    Energy Technology Data Exchange (ETDEWEB)

    Karsten, G. [Institute for Applied Reactor Physics, Kernforschungszentrum Karlsruhe, Karlsruhe, Federal Republic of Germany (Germany); Dippel, T. [Institute for Radiochemistry, Kernforschungszentrum Karlsruhe, Karlsruhe, Federal Republic of Germany (Germany); Laue, H. J. [Institute for Applied Reactor Physics, Kernforschungszentrum Karlsruhe, Karlsruhe, Federal Republic of Germany (Germany)

    1967-09-15

    An extended irradiation programme is being carried out for the fuel element development of the Karlsruhe fast breeder project. A very important task within the programme is the testing of plutonium-containing fuel pins in a fast-reactor environment. This paper deals with fabrication of such pins by our laboratories at Karlsruhe. For the fast reactor test positions at present envisaged a fuel with 15% plutonium and the uranium fully enriched is appropriate. Hie mixed oxide is both pelletized and vibro-compacted with smeared densities between 80 and 88% theoretical. The pin design is, for example, such that there are two gas plena at the top and bottom, and one blanket above the fuel with the fuel zone fitting to the test reactor core length. The specifications both for fuel and cladding have been adapted to the special purpose of a fast-breeder reactor - the outer dimensions, the choice of cladding and fuel types, the data used and the kind of tests outline the targets of the development. The fuel fabrication is described in detail, and also the powder line used for vibro-compaction. The source materials for the fuel are oxalate PuO{sub 2} and UO{sub 2} from the UF{sub 6} process. The special problems of mechanical mixing and of plutonium homogeneity have been studied. The development of the sintering technique and grain characteristics for vibratory compactive fuel had to overcome serious problems in order to reach 82-83% theoretical. The performance of the pin fabrication needed a major effort in welding, manufacturing of fits and decontamination of the pin surfaces. This was a stimulation for the development of some very subtle control techniques, for example taking clear X-ray photographs and the tube testing. In general the selection of tests was a special task of the production routine. In conclusion the fabrication of the pins resulted in valuable experiences for the further development of fast reactor fuel elements. (author)

  5. Velocity distribution measurement in wire-spaced fuel pin bundle

    International Nuclear Information System (INIS)

    Mizuta, Hiroshi; Ohtake, Toshihide; Uruwashi, Shinichi; Takahashi, Keiichi

    1974-01-01

    Flow distribution measurement was made in the subchannels of a pin bundle in air flow. The present paper is interim because the target of this work is the decision of temperature of the pin surface in contact with wire spacers. The wire-spaced fuel pin bundle used for the experiment consists of 37 simulated fuel pins of stainless steel tubes, 3000 mm in length and 31.6 mm in diameter, which are wound spirally with 6 mm stainless steel wire. The bundle is wrapped with a hexagonal tube, 3500 mm in length and 293 mm in flat-to-flat distance. The bundle is fixed with knock-bar at the entrance of air flow in the hexagonal tube. The pitch of pins in the bundle is 37.6 mm (P/D=1.19) and the wrapping pitch of wire is 1100 mm (H/D=34.8). A pair of arrow-type 5-hole Pitot tubes are used to measure the flow velocity and the direction of air flow in the pin bundle. The measurement of flow distribution was made with the conditions of air flow rate of 0.33 m 3 /sec, air temperature of 45 0 C, and average Reynolds number of 15100 (average air velocity of 20.6 m/sec.). It was found that circular flow existed in the down stream of wire spacers, that axial flow velocity was slower in the subchannels, which contained wire spacers, than in those not affected by the wire, and that the flow angle to the axial velocity at the boundary of subchannels was two thirds smaller than wire wrapping angle. (Tai, I.)

  6. High Intensity Organic Light-emitting Diodes

    Science.gov (United States)

    Qi, Xiangfei

    This thesis is dedicated to the fabrication, modeling, and characterization to achieve high efficiency organic light-emitting diodes (OLEDs) for illumination applications. Compared to conventional lighting sources, OLEDs enabled the direct conversion of electrical energy into light emission and have intrigued the world's lighting designers with the long-lasting, highly efficient illumination. We begin with a brief overview of organic technology, from basic organic semiconductor physics, to its application in optoelectronics, i.e. light-emitting diodes, photovoltaics, photodetectors and thin-film transistors. Due to the importance of phosphorescent materials, we will focus on the photophysics of metal complexes that is central to high efficiency OLED technology, followed by a transient study to examine the radiative decay dynamics in a series of phosphorescent platinum binuclear complexes. The major theme of this thesis is the design and optimization of a novel architecture where individual red, green and blue phosphorescent OLEDs are vertically stacked and electrically interconnected by the compound charge generation layers. We modeled carrier generation from the metal-oxide/doped organic interface based on a thermally assisted tunneling mechanism. The model provides insights to the optimization of a stacked OLED from both electrical and optical point of view. To realize the high intensity white lighting source, the efficient removal of heat is of a particular concern, especially in large-area devices. A fundamental transfer matrix analysis is introduced to predict the thermal properties in the devices. The analysis employs Laplace transforms to determine the response of the system to the combined effects of conduction, convection, and radiation. This perspective of constructing transmission matrices greatly facilitates the calculation of transient coupled heat transfer in a general multi-layer composite. It converts differential equations to algebraic forms, and

  7. Method and apparatus for enhancing vortex pinning by conformal crystal arrays

    Science.gov (United States)

    Janko, Boldizsar; Reichhardt, Cynthia; Reichhardt, Charles; Ray, Dipanjan

    2015-07-14

    Disclosed is a method and apparatus for strongly enhancing vortex pinning by conformal crystal arrays. The conformal crystal array is constructed by a conformal transformation of a hexagonal lattice, producing a non-uniform structure with a gradient where the local six-fold coordination of the pinning sites is preserved, and with an arching effect. The conformal pinning arrays produce significantly enhanced vortex pinning over a much wider range of field than that found for other vortex pinning geometries with an equivalent number of vortex pinning sites, such as random, square, and triangular.

  8. Pinning synchronization of delayed complex dynamical networks with nonlinear coupling

    Science.gov (United States)

    Cheng, Ranran; Peng, Mingshu; Yu, Weibin

    2014-11-01

    In this paper, we find that complex networks with the Watts-Strogatz or scale-free BA random topological architecture can be synchronized more easily by pin-controlling fewer nodes than regular systems. Theoretical analysis is included by means of Lyapunov functions and linear matrix inequalities (LMI) to make all nodes reach complete synchronization. Numerical examples are also provided to illustrate the importance of our theoretical analysis, which implies that there exists a gap between the theoretical prediction and numerical results about the minimum number of pinning controlled nodes.

  9. Creep relaxation of fuel pin bending and ovalling stresses

    International Nuclear Information System (INIS)

    Chan, D.P.; Jackson, R.J.

    1979-06-01

    Analytical methods for calculating fuel pin cladding bending and ovalling stresses due to pin bundle-duct mechanical interaction taking into account nonlinear creep are presented. Calculated results are in close agreement with finite element results by MARC-CDC program. The methods are used to investigate the effect of creep on the FTR fuel cladding bending and ovalling stresses. It is concluded that the cladding of 316 SS 20% CW and reference design has high creep rates in the FTR core region to keep the bending and ovalling stresses to low levels

  10. Nuclear fuel assemblies and fuel pins usable in such assemblies

    International Nuclear Information System (INIS)

    Jolly, R.

    1982-01-01

    A novel end cap for a nuclear fuel assembly is described in detail. It consists of a trisection arrangement which is received within a cell of a cellular grid. The cell contains abutment means with which the trisection comes into abutment. The grid also contains an abutment means for preventing the trisections from being inserted into the cell in an incorrect orientation. The present design allows fuel pins to be securely held in a hold-down grid of a sub-assembly. The design also allows easier dis-assembly of the swollen and embrittled fuel pins prior to reprocessing. (U.K.)

  11. 8 Pin RIC Socket for Hearing Aid Applications

    DEFF Research Database (Denmark)

    Islam, Aminul; Hansen, Hans Nørgaard; Davids, Søren

    2012-01-01

    process and the other one is fully automated process. This paper presents the entire process chain for both the concepts and makes a comparative analysis based on the experimental investigation and validation. The work presented here can be a source of valuable information for industrial users...... of them. 8 Pin RIC Socket is a functionally versatile product which can combine many different functions and presents many advantages compared with the previous 3 Pin RIC Socket. For the demonstrator production of the new Socket, two different production concepts were chosen- one based on semi-automated...

  12. Fuel pin failure in the PFR/TREAT experiments

    International Nuclear Information System (INIS)

    Herbert, R.; Hunter, C.W.; Kramer, J.M.; Wood, M.H.; Wright, A.E.

    1986-01-01

    The PFR/TREAT safety testing programme involves the transient testing of fresh and pre-irradiated UK and US fuel pins. This paper summarizes the experimental and calculational results obtained to date on fuel pin failure during transient overpower (resulting from an accidental addition of resolivity) and transient undercooling followed by overpower (arising from an accidental stoppage of the primary sodium circulating pumps) accidents. Companion papers at this conference address: (I) the progress and future plans of the programme, and (II) post-failure material movements

  13. Influence of LMFBR fuel pin temperature profiles on corrosion rate

    International Nuclear Information System (INIS)

    Shiels, S.A.; Bagnall, C.; Schrock, S.L.; Orbon, S.J.

    1976-01-01

    The paper describes the sodium corrosion behavior of 20 percent cold worked Type 316 stainless steel fuel pin cladding under a simulated reactor thermal environment. A temperature gradient, typical of a fuel pin, was generated in a 0.9 m long heater section by direct resistance heating. Specimens were located in an isothermal test section immediately downstream of the heater. A comparison of the measured corrosion rates with available data showed an enhancement factor of between 1.5 and 2 which was attributed to the severe axial temperature gradient through the heater. Differences in structure and surface chemistry were also noted

  14. Establishment of the PIN within the Colombian party system

    Directory of Open Access Journals (Sweden)

    Vanessa Ortiz López

    2012-12-01

    Full Text Available This paper is a review of the legislative elections held in Colombia in 2010 and one of their main results, the establishment of the National Integration Party (PIN. The authors offer an analysis of articles that appeared in printed media, taking into consideration such variables as financing, legal constitution, popular acceptance and settling time. In this way, the authors attempt to demonstrate how the PIN managed to get a place in the political system and what are the consequences of this development, in particular, as the Department of Valle del Cauca is concerned.

  15. Analysis of the porosity distribution of mixed oxide pins

    International Nuclear Information System (INIS)

    Lieblich, M.; Lopez, J.

    1987-01-01

    In the frame of the Joint Irradiation Program IVO-FR2-Vg7 between the Centre of Nuclear Research of Karlsruhe (KfK), the irradiation of 30 mixed-oxide fuel rods in the FR2 experimental reactor was carried out. The pins were located in 10 single-walled NaK capsules. The behaviour of the fuel during its burnup was studied, mainly, the rest-porosity and cracking distribution in the pellet, partial densification, etc. In this work 3 pins from the capsule No. 165 were analyzed. The experimental results (pore and cracking profiles) were interpreted by the fuel rod code SATURN. (Author) 20 refs

  16. Overexpression of PvPin1, a Bamboo Homolog of PIN1-Type Parvulin 1, Delays Flowering Time in Transgenic Arabidopsis and Rice

    Directory of Open Access Journals (Sweden)

    Zhigang Zheng

    2017-09-01

    Full Text Available Because of the long and unpredictable flowering period in bamboo, the molecular mechanism of bamboo flowering is unclear. Recent study showed that Arabidopsis PIN1-type parvulin 1 (Pin1At is an important floral activator and regulates floral transition by facilitating the cis/trans isomerization of the phosphorylated Ser/Thr residues preceding proline motifs in suppressor of overexpression of CO 1 (SOC1 and agamous-like 24 (AGL24. Whether bamboo has a Pin1 homolog and whether it works in bamboo flowering are still unknown. In this study, we cloned PvPin1, a homolog of Pin1At, from Phyllostachys violascens (Bambusoideae. Bioinformatics analysis showed that PvPin1 is closely related to Pin1-like proteins in monocots. PvPin1 was widely expressed in all tested bamboo tissues, with the highest expression in young leaf and lowest in floral bud. Moreover, PvPin1 expression was high in leaves before bamboo flowering then declined during flower development. Overexpression of PvPin1 significantly delayed flowering time by downregulating SOC1 and AGL24 expression in Arabidopsis under greenhouse conditions and conferred a significantly late flowering phenotype by upregulating OsMADS56 in rice under field conditions. PvPin1 showed subcellular localization in both the nucleus and cytolemma. The 1500-bp sequence of the PvPin1 promoter was cloned, and cis-acting element prediction showed that ABRE and TGACG-motif elements, which responded to abscisic acid (ABA and methyl jasmonate (MeJA, respectively, were characteristic of P. violascens in comparison with Arabidopsis. On promoter activity analysis, exogenous ABA and MeJA could significantly inhibit PvPin1 expression. These findings suggested that PvPin1 may be a repressor in flowering, and its delay of flowering time could be regulated by ABA and MeJA in bamboo.

  17. Overexpression of PvPin1, a Bamboo Homolog of PIN1-Type Parvulin 1, Delays Flowering Time in Transgenic Arabidopsis and Rice.

    Science.gov (United States)

    Zheng, Zhigang; Yang, Xiaoming; Fu, Yaping; Zhu, Longfei; Wei, Hantian; Lin, Xinchun

    2017-01-01

    Because of the long and unpredictable flowering period in bamboo, the molecular mechanism of bamboo flowering is unclear. Recent study showed that Arabidopsis PIN1-type parvulin 1 (Pin1At) is an important floral activator and regulates floral transition by facilitating the cis/trans isomerization of the phosphorylated Ser/Thr residues preceding proline motifs in suppressor of overexpression of CO 1 (SOC1) and agamous-like 24 (AGL24). Whether bamboo has a Pin1 homolog and whether it works in bamboo flowering are still unknown. In this study, we cloned PvPin1 , a homolog of Pin1At , from Phyllostachys violascens (Bambusoideae). Bioinformatics analysis showed that PvPin1 is closely related to Pin1-like proteins in monocots. PvPin1 was widely expressed in all tested bamboo tissues, with the highest expression in young leaf and lowest in floral bud. Moreover, PvPin1 expression was high in leaves before bamboo flowering then declined during flower development. Overexpression of PvPin1 significantly delayed flowering time by downregulating SOC1 and AGL24 expression in Arabidopsis under greenhouse conditions and conferred a significantly late flowering phenotype by upregulating OsMADS56 in rice under field conditions. PvPin1 showed subcellular localization in both the nucleus and cytolemma. The 1500-bp sequence of the PvPin1 promoter was cloned, and cis -acting element prediction showed that ABRE and TGACG-motif elements, which responded to abscisic acid (ABA) and methyl jasmonate (MeJA), respectively, were characteristic of P. violascens in comparison with Arabidopsis . On promoter activity analysis, exogenous ABA and MeJA could significantly inhibit PvPin1 expression. These findings suggested that PvPin1 may be a repressor in flowering, and its delay of flowering time could be regulated by ABA and MeJA in bamboo.

  18. Design of the Nonlinear Pin Rubber Forming Equipment Integrating the Functions of Extruding, Dewatering, Drying & Expanding

    Directory of Open Access Journals (Sweden)

    Yuefeng Yuan

    2014-12-01

    Full Text Available The top priority of car-tire suppliers is to improve wetland grip force of the using tires, reduce the rolling resistance and the rolling noise of tires. It is urgent for the tire industry to research and develop high-performance tires to solve the above problems. They must use the high- performance synthetic rubber and auxiliary rubber to develop the most advanced manufacturing technologies and equipment. Silica, a kind of important tire auxiliary rubber, can significantly reduce the rolling resistance of tires, improve the grip force and properties resistant to ice, wetness or slippery of tires. In this paper, based on the conventional tire rubber forming technologies of extrusion, dewatering, drying and expanding, a study is made on the conical screw, the dewatering barrel, the drying barrel, the pin layout scheme, the expanding die head, cutter and the control system. The nonlinear pin rubber forming equipment integrating the functions of extrusion, dewatering, drying and expanding is designed and applied to tire auxiliary rubber forming. The experiment shows that the forming device can realize the one-step forming, with high forming efficiency, low cost and less labor.

  19. Electron dosimetry in irradiation processing with rad-hard diodes

    International Nuclear Information System (INIS)

    Santos, Thais Cavalheri dos

    2012-01-01

    This work had the aim of the development of dosimetric systems based on Si special diodes, resistant to radiation damage to online monitoring of irradiation processing using 1.5 MeV electrons energy and for relative dosimetry and clinical electron beam scanning within an energy range of 6 MeV up to 21 MeV. The diodes used were produced by Float Zone standard (FZ), Magnetic Czochralski (MCz) and epitaxy growth (EPI) methods. In order to use the diodes as detectors, they were fixed on alumina base to allow the connection of the polarization electrodes and the signals extraction. After the diode assembly on the base, each one was housed in a black acrylic probe with aluminized Mylar® window and LEMO® connector. With the devices operating in photovoltaic mode, the integration of the current signals as a function of irradiation time allowed obtain the charge produced in the sensitive volume of each diode irradiated. The electron accelerator used for high doses irradiation was the DC 1500/25/4 JOB 188 of the 1.5 MeV installed at the Radiation Technology Center of the IPEN/CNEN-SP. The current profile as function of exposure time, the response repeatability, the sensitivity as function of absorbed dose and the dose response curve were studied for each device. In comparison to FZ diode, we observed a greater decrease in the sensitivity for MCz diode, and good repeatability in both cases. Also, the increasing of the charge with the absorbed dose was well fitted by a second order polynomial function. In the EPI diode characterization, this one exhibited repeatability better than CTA dosimeters applied routinely in radiation processing. The above results indicate the potential use of these radiation hardness Si diodes in online dosimetry to high doses applications. For low doses irradiation were used the linear accelerators KD2 and Primus, both manufactured by Siemens and located at Sirio-Libanes Hospital. The diodes responses were evaluated for electron beams within the

  20. Direct diode lasers and their advantages for materials processing and other applications

    Science.gov (United States)

    Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

    2015-03-01

    The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of direct current control allows pulses of several microseconds with hundreds of watts average power. Spot sizes of less than 100 μm are obtained at the work piece. Such a diode system allows materials processing with a pulse parameter range that is hardly addressed by any other laser system. High productivity material ablation with cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but

  1. Assessment of pin-by-pin fission rate distribution within MOX/UO{sub 2} fuel assembly using MCNPX code

    Energy Technology Data Exchange (ETDEWEB)

    Louis, Heba Kareem; Amin, Esmat [Nuclear and Radiological Regulation Authority (NRRA), Cairo (Egypt). Safety Engineering Dept.

    2016-03-15

    The aim of the present paper is to assess the calculations of pin-by-pin group integrated fission rates within MOX/UO{sub 2} Fuel assemblies using the Monte Carlo code MCNP2.7c with two sets of the available latest nuclear data libraries used for calculating MOX-fueled systems. The data that are used in this paper are based on the benchmark by the NEA Nuclear Science Committee (NSC). The k{sub ∞} and absorption/fission reaction rates per isotope, k{sub eff} and pin-by-pin group integrated fission rates on 1/8 fraction of the geometry are determined. To assess the overall pin-by-pin fission rate distribution, the collective per cent error measures were investigated. The results of AVG, MRE and RMS error measures were less than 1 % error. The present results are compared with other participants using other Monte Carlo codes and with CEA results that were taken in the benchmark as reference. The results with ENDF/B-VI.6 are close to the results received by MVP (JENDL3.2) and SCALE 4.2 (JEF2.2). The results with ENDF/BVII.1 give higher values of k{sub ∞} reflecting the changes in the newer evaluations. In almost all results presented here, the MCNP calculated results with ENDF/B VII.1 should be considered more than those obtained by using other Monte Carlo codes and nuclear data libraries. The present calculations may be consider a reference for evaluating the numerical schemes in production code systems, as well as the global performance including cross-section data reduction methods as the calculations used continuous energy and no geometrical approximations.

  2. Si and SiC Schottky diodes in smart power circuits: a comparative study by I-V-T and C-V measurements

    Energy Technology Data Exchange (ETDEWEB)

    Hadzi-Vukovic, J [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria); Jevtic, M [Institute for Physics, Pregrevica 118, 11080 Zemun (Serbia and Montenegro); Rothleitner, H [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria); Croce, P Del [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria)

    2005-01-01

    In this paper we analyze a possibility of manufacturing and implementation of Schottky diodes in the smart power circuits. Three different Schottky diodes, in three different technologies, are realized in Si and SiC processes. The electrical characterizations with I-V-T and C-V measurements are done for all structures. It is shown that Si based Schottky diodes also are suitable to be integrated in the typical smart power circuits.

  3. Si and SiC Schottky diodes in smart power circuits: a comparative study by I-V-T and C-V measurements

    International Nuclear Information System (INIS)

    Hadzi-Vukovic, J; Jevtic, M; Rothleitner, H; Croce, P Del

    2005-01-01

    In this paper we analyze a possibility of manufacturing and implementation of Schottky diodes in the smart power circuits. Three different Schottky diodes, in three different technologies, are realized in Si and SiC processes. The electrical characterizations with I-V-T and C-V measurements are done for all structures. It is shown that Si based Schottky diodes also are suitable to be integrated in the typical smart power circuits

  4. A Passive X-Band Double Balanced Mixer Utilizing Diode Connected SiGe HBTs

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld

    2013-01-01

    In this paper, a passive double balanced mixer in SiGe HBT technology is presented. Due to lack of suitable passive mixing elements in the technology, the mixing elements are formed by diode connected HBTs. The mixer is optimized for use in doppler radars and is highly linear with 1 dB compressio...

  5. The effects of design parameters on vortex diode pump performance, 2

    International Nuclear Information System (INIS)

    Yoshitomi, Hideki; Koizumi, Tadao; Muroyama, Kenichi; Wada, Tsutomu.

    1989-01-01

    A fluidic pump with two vortex diodes is a new technology for transporting dangerous corrosive fluids without the use of moving parts. The pump can be connected with the discharge tank through series and cascade connections. In the previous report, we described the fundamentals and design criteria of the pump for the series connection case. This study has been performed with the same object as the previous work for the case of cascade connection. First, we present the basic pump characteristics with some dimensionless performance factors by analyzing the pump model. Then, the effects of the cylinder volumetric coefficient, driving pressure, suction-diode-to-delivery-diode-passage-area ratio and reverse-flow-to-forward-flow-resistance ratio of the vortex diode are investigated. As a result, the characteristic difference between series and cascade connections is clarified. Basic ways to decide the value of each performance factor are suggested. (author)

  6. Fabrication and characterization of 8.87 THz schottky barrier mixer diodes for mixer

    Science.gov (United States)

    Wang, Wenjie; Li, Qian; An, Ning; Tong, Xiaodong; Zeng, Jianping

    2018-04-01

    In this paper we report on the fabrication and characterization of GaAs-based THz schottky barrier mixer diodes. Considering the analyzed results as well as fabrication cost and complexity, a group of trade-off parameters was determined. Electron-beam lithography and air-bridge technique have been used to obtain schottky diodes with a cut off frequency of 8.87 THz. Equivalent values of series resistance, ideal factor and junction capacitance of 10.2 (1) Ω, 1.14 (0.03) and 1.76(0.03) respectively have been measured for 0.7um diameter anode devices by DC and RF measurements. The schottky barrier diodes fabrication process is fully planar and very suitable for integration in THz frequency multiplier and mixer circuits. THz Schottky barrier diodes based on such technology with 2 μm diameter anodes have been tested at 1.6 THz in a sub-harmonic mixer.

  7. Evaluation of PWR and BWR pin cell benchmark results

    International Nuclear Information System (INIS)

    Pijlgroms, B.J.; Gruppelaar, H.; Janssen, A.J.; Hoogenboom, J.E.; Leege, P.F.A. de; Voet, J. van der; Verhagen, F.C.M.

    1991-12-01

    Benchmark results of the Dutch PINK working group on PWR and BWR pin cell calculational benchmark as defined by EPRI are presented and evaluated. The observed discrepancies are problem dependent: a part of the results is satisfactory, some other results require further analysis. A brief overview is given of the different code packages used in this analysis. (author). 14 refs., 9 figs., 30 tabs

  8. Evaluation of PWR and BWR pin cell benchmark results

    Energy Technology Data Exchange (ETDEWEB)

    Pijlgroms, B.J.; Gruppelaar, H.; Janssen, A.J. (Netherlands Energy Research Foundation (ECN), Petten (Netherlands)); Hoogenboom, J.E.; Leege, P.F.A. de (Interuniversitair Reactor Inst., Delft (Netherlands)); Voet, J. van der (Gemeenschappelijke Kernenergiecentrale Nederland NV, Dodewaard (Netherlands)); Verhagen, F.C.M. (Keuring van Electrotechnische Materialen NV, Arnhem (Netherlands))

    1991-12-01

    Benchmark results of the Dutch PINK working group on PWR and BWR pin cell calculational benchmark as defined by EPRI are presented and evaluated. The observed discrepancies are problem dependent: a part of the results is satisfactory, some other results require further analysis. A brief overview is given of the different code packages used in this analysis. (author). 14 refs., 9 figs., 30 tabs.

  9. Pinning and creep in high-Tc superconductors

    International Nuclear Information System (INIS)

    Ovchinnikov, Yu.N.; Ivlev, B.I.

    1992-01-01

    The angular and magnetic field dependence of a critical current parallel to the layers in the layered superconductors is studied. The critical current value is found for a superconductor with strong pinning centers. Quantum flux creep in sufficiently perfect layered high-Tc superconductors is discussed. The cross-over temperature between activated and quantum creep is found. (orig.)

  10. Percutaneous Pin Fixation of Gartland Type I11 Supraconylar ...

    African Journals Online (AJOL)

    S G Lungu M.Med (Orth). Specialist Orthopaedic Surgeon. Zambian Italian Orthopaedic Hospital, Lusaka. Key words: Percutaneous, pin fixation, Gartland type Ill, supracondylar, fractures, and humerus. This was a prospective study of 40 children with severely displaced (Gartland Type 111) supracondylar fractures of the ...

  11. Modeling the pinning of Au and Ni clusters on graphite

    NARCIS (Netherlands)

    Smith, R.; Nock, C.; Kenny, S.D.; Belbruno, J.J.; Di Vece, M.; Paloma, S.; Palmer, R.E.

    2006-01-01

    The pinning of size-selected AuN and NiN clusters on graphite, for N=7–100, is investigated by means of molecular dynamics simulations and the results are compared to experiment and previous work with Ag clusters. Ab initio calculations of the binding of the metal adatom and dimers on a graphite

  12. Flux pinning in MOD YBCO films by chemical doping

    International Nuclear Information System (INIS)

    Zhou, Y X; Ghalsasi, S; Rusakova, I; Salama, K

    2007-01-01

    A novel nanomaterial synthesis technique has been developed to introduce 0D (particles), 1D (columnar defects) and 3D (domains) nanoscale pinning centres in MOD Y 1 Ba 2 Cu 3 O 7 (YBCO) coated conductors. We have succeeded in introducing nanoscale Y enriched particles, nanoscale 90 0 rotated Y 1/3 Sm 2/3 Ba 2 Cu 3 O 7 domains and nanoscale Zr enriched columnar defects into YBCO layers by different chemical doping. The pinning force density in Y 2 O 3 -doped YBCO film is found to be larger than that of pure YBCO film at all fields. Also it was found that YBCO films with Sm substituting for Y have yielded improved critical current density characteristics over a wide range of magnetic fields. Maximum pinning force densities exceeding 7 and 8 GN m -3 are obtained in 5% BZO-doped and Sm substituted YBCO films, respectively. Additionally, TEM studies revealed nanoscale Zr enriched columnar defects distributing in the matrix of the c-oriented YBCO film throughout the whole cross section. This indicates that chemical doping is a promising fabrication technique to create specific pinning landscapes in YBCO coated conductors

  13. Temperature dependent pinning landscapes in REBCO thin films

    Science.gov (United States)

    Jaroszynski, Jan; Constantinescu, Anca-Monia; Hu, Xinbo Paul

    2015-03-01

    The pinning landscapes of REBCO (RE=rare earth elements) thin films have been a topic of study in recent years due to, among other reasons, their high ability to introduce various phases and defects. Pinning mechanisms studies in high temperature superconductors often require detailed knowledge of critical current density as a function of magnetic field orientation as well as field strength and temperature. Since the films can achieve remarkably high critical current, challenges exist in evaluating these low temperature (down to 4.2 K) properties in high magnetic fields up to 30 T. Therefore both conventional transport, and magnetization measurements in a vibrating coil magnetometer equipped with rotating sample platform were used to complement the study. Our results clearly show an evolution of pinning from strongly correlated effects seen at high temperatures to significant contributions from dense but weak pins that thermal fluctuations render ineffective at high temperatures but which become strong at lower temperatures Support for this work is provided by the NHMFL via NSF DRM 1157490

  14. Flux vortex dynamics and electric fields in matched pinning systems

    International Nuclear Information System (INIS)

    Blamire, M.G.

    1987-01-01

    The pinning of flux vortices in type II superconductors has been the subject of extensive research. Certain experiments have attempted to investigate this problem by the use of specially prepared pinning structures consisting of regular arrays of pinning centers. In this paper a theory relating to such experiments is described. This theory is based on the existence and properties of defects in an otherwise perfect vortex lattice which is commensurate with a pinning array consisting of a triangular lattice of holes in a superconducting thin film. A quantitative treatment predicts the existence and position of substructure on the critical current versus magnetic field curves in addition to the main peaks previously predicted to occur when the vortex and hole lattices are exactly matched. The theory also qualitatively describes the overall shape of these curves. An analysis of the temperature dependence of this substructure shows broad agreement with existing experimental results. The application of this theory to future experiments should allow a detailed investigation of vortex lattice elasticity and flux flow

  15. Performance of advanced oxide fuel pins in EBR-II

    International Nuclear Information System (INIS)

    Lawrence, L.A.; Jensen, S.M.; Hales, J.W.; Karnesky, R.A.; Makenas, B.J.

    1986-05-01

    The effects of design and operating parameters on mixed-oxide fuel pin irradiation performance were established for the Hanford Engineering Development Laboratory (HEDL) advanced oxide EBR-II test series. Fourteen fuel pins breached in-reactor with reference 316 SS cladding. Seven of the breaches are attributed to FCMI. Of the remaining seven breached pins, three are attributed to local cladding over-temperatures similar to the breach mechanism for the reference oxide pins irradiated in EBR-II. FCCI was found to be a contributing factor in two high burnup, i.e., 11.7 at. % breaches. The remaining two breaches were attributed to mechanical interaction of UO 2 fuel and fission products accumulated in the lower cladding insulator gap, and a loss of cladding ductility possibly due to liquid metal embrittlement. Fuel smear density appears to have the most significant impact on lifetime. Quantitative evaluations of cladding diameter increases attributed to FCMI, established fuel smear density, burnup, and cladding thickness-to-diameter ratio as the major parameters influencing the extent of cladding strain

  16. Image analysis for remote examination of fuel pins

    International Nuclear Information System (INIS)

    Cook, J.H.; Nayak, U.P.

    1982-01-01

    An image analysis system operating in the Wing 9 Hot Cell Facility at Los Alamos National Laboratory provides quantitative microstructural analyses of irradiated fuels and materials. With this system, fewer photomicrographs are required during postirradiation microstructural examination and data are available for analysis much faster. The system has been used successfully to examine Westinghouse Advanced Reactors Division experimental fuel pins

  17. Flux-Vortex Pinning and Neutron Star Evolution

    Indian Academy of Sciences (India)

    M. Ali Alpar

    2017-09-12

    Sep 12, 2017 ... M. ALI ALPAR. Faculty of Engineering and Natural Sciences, Sabancı University, 34956, Istanbul, Turkey. E-mail: ... netic field of the neutron star were B ∼ 109 G. At the ..... across pinning energy barriers by thermal activation.

  18. The behaviour of Phenix fuel pin bundle under irradiation

    International Nuclear Information System (INIS)

    Marbach, G.; Millet, P.; Blanchard, P.; Huillery, R.

    1979-07-01

    An entire Phenix sub-assembly has been mounted and sectioned after irradiation. The examination of cross-sections revealed the effects of mechanical interaction in the bundle (ovalisations and contacts between clads). According to analysis of the sodium channels, cooling of the pin bundle remained uniform. (author)

  19. Pin Tract Infection after Uniplanar External Fixation of Open ...

    African Journals Online (AJOL)

    ADMIN

    Regionally, a study by Jellis et al in Lusaka, Zambia, compared the rate of severe pin tract infection in HIV negative and positive ... likelihood of infection such as human immunodeficiency virus infection, diabetes mellitus, liver failure, renal failure, tumours ... Combined Open Tibia-Fibular. And Femur Fractures. 2. 2.7. Totals.

  20. Review of HEDL fuel pin transient analyses analytical programs

    International Nuclear Information System (INIS)

    Scott, J.H.; Baars, R.E.

    1975-05-01

    Methods for analysis of transient fuel pin performance are described, as represented by the steady-state SIEX code and the PECT series of codes used for steady-state and transient mechanical analyses. The empirical fuel failure correlation currently in use for analysis of transient overpower accidents is described. (U.S.)

  1. Propagation of spiral waves pinned to circular and rectangular obstacles.

    Science.gov (United States)

    Sutthiopad, Malee; Luengviriya, Jiraporn; Porjai, Porramain; Phantu, Metinee; Kanchanawarin, Jarin; Müller, Stefan C; Luengviriya, Chaiya

    2015-05-01

    We present an investigation of spiral waves pinned to circular and rectangular obstacles with different circumferences in both thin layers of the Belousov-Zhabotinsky reaction and numerical simulations with the Oregonator model. For circular objects, the area always increases with the circumference. In contrast, we varied the circumference of rectangles with equal areas by adjusting their width w and height h. For both obstacle forms, the propagating parameters (i.e., wavelength, wave period, and velocity of pinned spiral waves) increase with the circumference, regardless of the obstacle area. Despite these common features of the parameters, the forms of pinned spiral waves depend on the obstacle shapes. The structures of spiral waves pinned to circles as well as rectangles with the ratio w/h∼1 are similar to Archimedean spirals. When w/h increases, deformations of the spiral shapes are observed. For extremely thin rectangles with w/h≫1, these shapes can be constructed by employing semicircles with different radii which relate to the obstacle width and the core diameter of free spirals.

  2. Neutron radiography for quality assurance of PHWR fuel pins

    International Nuclear Information System (INIS)

    Chandrasekharan, K.N.; Patil, B.P.; Ghosh, J.K.; Ganguly, C.

    1993-01-01

    Neutron radiography was employed for quality assurance (QA) for advanced PHWR experimental fuel pins containing mixed uranium-plutonium dioxide and thorium-plutonium dioxide pellets. Direct, transfer and track-etch techniques were utilised. The thermal neutron beam facility of APSARA research reactor at Bhabha Atomic Research Centre was used. (author). 5 refs., 16 figs., 2 tabs

  3. Calculation of fuel pin failure timing under LOCA conditions

    International Nuclear Information System (INIS)

    Jones, K.R.; Wade, N.L.; Siefken, L.J.; Straka, M.; Katsma, K.R.

    1991-10-01

    The objective of this research was to develop and demonstrate a methodology for calculation of the time interval between receipt of the containment isolation signals and the first fuel pin failure for loss-of-coolant accidents (LOCAs). Demonstration calculations were performed for a Babcock and Wilcox (B ampersand W) design (Oconee) and a Westinghouse (W) 4-loop design (Seabrook). Sensitivity studies were performed to assess the impacts of fuel pin burnup, axial peaking factor, break size, emergency core cooling system (ECCS) availability, and main coolant pump trip on these items. The analysis was performed using a four-code approach, comprised of FRAPCON-2, SCDAP/RELAP5/MOD3, TRAC-PF1/MOD1, and FRAP-T6. In addition to the calculation of timing results, this analysis provided a comparison of the capabilities of SCDAP/RELAP5/MOD3 with TRAC-PF1/MOD1 for large-break LOCA analysis. This paper discusses the methodology employed and the code development efforts required to implement the methodology. The shortest time intervals calculated between initiation of containment isolation and fuel pin failure were 11.4 s and 19.1 for the B ampersand W and W plants, respectively. The FRAP-T6 fuel pin failure times calculated using thermal-hydraulic data generated by SCDAP/RELAP5/MOD3 were more conservative than those calculated using data generated by TRAC-PF1/MOD1. 18 refs., 7 figs., 4 tabs

  4. Investigation on flow and heat transfer characteristics in rectangular channel with drop-shaped pin fins

    Directory of Open Access Journals (Sweden)

    Fengming Wang

    2012-12-01

    Full Text Available The flow and heat transfer characteristics inside a rectangular channel embedded with pin fins were numerically and experimentally investigated. Several differently shaped pin fins (i.e., circular, elliptical, and drop-shaped with the same cross-sectional areas were compared in a staggered arrangement. The Reynolds number based on the obstructed section hydraulic diameter (defined as the ratio of the total wetted surface area to the open duct volume available for flow was varied from 4800 to 8200. The more streamlined drop-shaped pin fins were better at delaying or suppressing separation of the flow passing through them, which decreased the aerodynamic penalty compared to circular pin fins. The heat transfer enhancement of the drop-shaped pin fins was less than that of the circular pin fins. In terms of specific performance parameters, drop-shaped pin fins are a promising alternative configuration to circular pin fins.

  5. Vortex Dynamics in Superconductors with Different Types of Pinning Potentials

    International Nuclear Information System (INIS)

    Laguna, Maria Fabiana

    2001-01-01

    In this work we study the behavior of the vortex system in the mixed state of a type II superconductor when it interacts with different kinds of pinning potentials. To do this, we perform numerical simulations in the presence of an external magnetic field, by making use of two different approaches.One corresponds to a Langevin simulation of the three dimensional XY model or Josephson-junction network, whereas the other corresponds to a Molecular dynamics simulation of two dimensional point-like vortices.We analyze the transport properties of highly anisotropic superconductors with different kinds of topological disorder in the configuration in which the external field is applied perpendicular to the CuO planes.We found that for systems with point defects the activation energy is the same for the two components of the resistivity, while in systems with columnar defects the activation energies can be different.We also study the structure, phase transitions and transport properties of the vortex system when the external magnetic field lies parallel to the planes in layered superconductors. We analyze the stability of different phases at low temperatures and show under which conditions the smectic phase is stable.Our results indicate the presence of the smectic phase in an intermediate range of temperatures.We have studied a vortex array in a periodic pinning potential with triangular and kagome geometries.We obtain the ground state vortex configurations and calculate some thermodynamic quantities for different magnetic fields.We observe several stages of lattice pinning and melting and we characterize different phases and transitions between them.Finally, simulating the Bitter pinning effect over the vortex system, we study static and dynamic properties of the vortex system in the presence of the surface Bitter pinning and the bulk pinning.We found low temperature structures similar to those obtained experimentally.We analyze the dynamics of the nucleation and growth

  6. One- and two-dimension effects on fuel pin lifetime

    International Nuclear Information System (INIS)

    Stephen, J.D.; Biancheria, A.; Leibnitz, D.; O'Reilly, B.D.; Liu, Y.Y.; Labar, M.P.; Gneiting, B.C.

    1979-01-01

    Lifetime, or breach of the cladding, is a difficult performance limit to establish in fuel pin design. The significant benefits of high plant capacity factor favor conservative design to eliminate downtime or partial power operation caused by the breach limit; however, overly conservative design produces significant penalties. The LIFE system is being applied to help understand the range between operation and breach so that appropriate design margins can be selected. Standards are being developed in the USA to assure the structural integrity of all core components. These standards will provide guidelines to account for the failure mechanisms observed in the high temperature, high fluence core environment. The work to date indicates that creep rupture is the most important failure mechanism for mixed-oxide fuel pins during normal operation and slow power changes. The local cumulative creep rupture damage fraction (CDF) has been adopted as the parameter to assess the approach to failure. Several oxide breached pins and siblings have been studied For example, the P23B-73 pin was an FFTR driver design pin irradiated in EBR-II which failed at 10 at,% burnup. Initial evaluation based on LIFE3 led to the conclusion that the pin should not have failed. Further analyses determined the sensitivity of the breach prediction to the time-to-rupture correlation, cladding temperature, and fuel-fission product swelling (which had not been modeled in LIFE3). The uncertainties in the time-to-rupture correlation have been established. But LIFE is a one-dimensional model. The TWOD code is complete, and development of the best way to couple LIFE and TWOD for lifetime analysis is in progress. Two preliminary conclusions from analysis of representative oxide pin geometries are, first, that the circumferential stress distribution may not peak at the hot spot, but the damage (CDF) does. And second, that the effect of stress concentrations near fuel cracks on cladding creep damage is small

  7. Pinning and irreversibility in superconducting bulk MgB{sub 2} with added nanodiamonds

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Anurag [Superconductivity and Cryogenics Division, National Physical Laboratory (CSIR), New Delhi-110012 (India); Narlikar, A V, E-mail: anurag@mail.nplindia.ernet.i [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore-452017, MP (India)

    2009-12-15

    Resistance, R(T), and magnetization, M(B), studies on superconducting bulk MgB{sub 2} samples containing nanodiamonds (ND) as additives (wt% of ND: x = 0%, 1%, 3%, 5%, 7% and 10%) were recently published in two articles (Vajpayee et al 2007 Supercond. Sci. Technol. 20 S155, Vajpayee et al 2008 J. Appl. Phys. 103 07C708). The main observations reported were significant improvements in the critical current density J{sub c}(B), irreversibility line B{sub irr}(T) and upper critical field B{sub c2}(T) with ND addition. However, a closer look shows that as regards the potential of this technologically important material at higher magnetic fields and temperatures, there is still a lot of room for improvement. With that in mind we revisit the R(T) and M(B) data and analyze them, in the present work. We show that, despite ND addition, J{sub c} depends strongly on B in the high field region and tends to vanish at irreversibility lines that lie deep, i.e. at around 0.3 B{sub c2}(T), in the B-T phase diagram. The irreversibility lines, determined by R(T){yields}0 in the presence of B, are found to lie at around 0.5 B{sub c2}(T) in the phase diagram. These results for pinning and irreversibility lines are discussed in the light of various models such as those of surface sheath superconductivity, magnetically introduced percolation in polycrystalline MgB{sub 2}, thermally assisted flux motion (TAFM) and a modified flux line shear mechanism. Our analysis hints at TAFM and weak pinning channels with distributed superconducting properties percolating in our samples determining the irreversibility and pinning properties.

  8. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  9. Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

    Science.gov (United States)

    Ho, Szuheng; Yu, Hyeonggeun; So, Franky

    2017-11-01

    Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

  10. A single-molecule diode

    Science.gov (United States)

    Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

    2005-01-01

    We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current–voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur–gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current–voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current–voltage characteristics, similar to the phenomena in a semiconductor diode. PMID:15956208

  11. Near-infrared tunable laser diode spectroscopy: an easy way for gas sensing

    Science.gov (United States)

    Larive, Marc; Henriot, V.

    1997-05-01

    A gas sensor using optical spectrometry and dedicated to a specific gas is studied. It should be able to operate out of laboratories with a very long life and a low maintenance requirement. It is based on TLDS (tunable laser diode spectroscopy) and uses a standard Perot-Fabry laser diode already developed for telecommunications. The mode selection is realized by a passband filter and the wavelength tuning is performed via the diode temperature or its injection current. A PIN photodiode is used for detection, however a rough photoacoustic solution is intended for the future. Absorptions as low as 3.10-3 are detected with this rough system and a limit detection of 10-3 is available with a signal to noise ratio of unity. Experiments have shown that this system is strongly selective for the specified gas (currently the methane). A simulation has been performed which very well fits the experiment and allows us to extrapolate the performances of the system for other gases.

  12. Compact 2100 nm laser diode module for next-generation DIRCM

    Science.gov (United States)

    Dvinelis, Edgaras; Greibus, Mindaugas; TrinkÅ«nas, Augustinas; NaujokaitÄ--, Greta; Vizbaras, Augustinas; Vizbaras, Dominykas; Vizbaras, Kristijonas

    2017-10-01

    Compact high-power 2100 nm laser diode module for next-generation directional infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state and fiber laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 - 2450 nm band [1] while also maintaining very attractive size, weight, power consumption and cost characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Total 2 emitters stacked vertically were used in 2100 nm laser diode module. Final optical output power of the module goes up to 2 W at temperature of 20 °C. Total dimensions of the laser diode module are 35 x 25 x 16 mm (L x W x H) with a weight of 28 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.

  13. Study and fabrication of tunnel diodes made on germanium using a collective planar technique

    International Nuclear Information System (INIS)

    Vrahides, Michel

    1973-01-01

    The main results of the theory on tunnel diodes are presented in the first chapter. From these results are deduced the technological requirements that any fabrication process should meet to make tunnel diodes. These requirements show up that, among the three techniques for junction making (thermal diffusion of impurities, epitaxy, alloying), the last one is presently the best fitted to the fabrication of tunnel junctions. By analyzing the defects created by various alloying technologies presently used, together with a study of the benefits due to a use of chemical photolithography, evaporation under vacuum and masking by deposited oxide, it is possible to design a tentative scheme of a 0.5 ns tunnel diode. Then, in a second chapter, is presented the collective process for fabrication that has been used on monocrystalline, P-type, germanium wafers. 8 000 tunnel diodes may be positioned on a 1.5 inch diameter wafer by using that process. A description of the various apparatus used is also given. The experimental results are described in the third chapter. The influence of the various fabrication parameters on the electrical characteristics of the diodes are discussed. It is shown, by studying the fabrication yields and parameter spreading, that 80 per cent of the diodes exhibit a standard tunnel diode behaviour and that 90 per cent of these present a peak current dispersion less than ± 25 per cent. When measuring at the peak current drifts under temperature stresses, a good analogy with conventional tunnel diode is found. Some measurements of switching times have led to values as low as 0.6 nanoseconds. (author) [fr

  14. Transfixation pinning and casting of radial-ulnar fractures in calves: A review of three cases

    OpenAIRE

    St-Jean, Guy; Debowes, Richard M.

    1992-01-01

    We reviewed the medical records of three calves with radial-ulnar fractures which were reduced and stabilized by transfixation pinning and casting. Multiple Steinmann pins were placed transversely through proximal and distal fracture fragments and the pin ends were incorporated in fiberglass cast material after fracture reduction. Cast material was placed from proximal to distal radius and served as an external frame to maintain pin position and fracture reduction.

  15. Improving Joint Formation and Tensile Properties of Dissimilar Friction Stir Welding of Aluminum and Magnesium Alloys by Solving the Pin Adhesion Problem

    Science.gov (United States)

    Liu, Zhenlei; Ji, Shude; Meng, Xiangchen

    2018-03-01

    Friction stir welding (FSW), as a solid-state welding technology invented by TWI in 1991, has potential to join dissimilar Al/Mg alloys. In this study, the pin adhesion phenomenon affecting joint quality during FSW of 6061-T6 aluminum and AZ31B magnesium alloys was investigated. The adhesion phenomenon induced by higher heat input easily transformed the tapered-and-screwed pin into a tapered pin, which greatly reduced the tool's ability to drive the plasticized materials and further deteriorated joint formation. Under the condition without the pin adhesion, the complex intercalated interlayer at the bottom of stir zone was beneficial to mechanical interlocking of Al/Mg alloys, improving tensile properties. However, the formation of intermetallic compounds was still the main reason of the joint fracture, significantly deteriorating tensile properties. Under the welding speed of 60 mm/min without the pin adhesion phenomenon, the maximum tensile strength of 107 MPa and elongation of 1.2% were achieved.

  16. Field of first magnetic flux entry and pinning strength of superconductors for rf application measured with muon spin rotation

    Science.gov (United States)

    Junginger, T.; Abidi, S. H.; Maffett, R. D.; Buck, T.; Dehn, M. H.; Gheidi, S.; Kiefl, R.; Kolb, P.; Storey, D.; Thoeng, E.; Wasserman, W.; Laxdal, R. E.

    2018-03-01

    The performance of superconducting radiofrequency (SRF) cavities used for particle accelerators depends on two characteristic material parameters: field of first flux entry Hentry and pinning strength. The former sets the limit for the maximum achievable accelerating gradient, while the latter determines how efficiently flux can be expelled related to the maximum achievable quality factor. In this paper, a method based on muon spin rotation (μ SR ) is developed to probe these parameters on samples. It combines measurements from two different spectrometers, one being specifically built for these studies and samples of different geometries. It is found that annealing at 1400 °C virtually eliminates all pinning. Such an annealed substrate is ideally suited to measure Hentry of layered superconductors, which might enable accelerating gradients beyond bulk niobium technology.

  17. New Universal Tribometer as Pin or Ball-on-Disc and Reciprocating Pin-on-Plate Types

    Directory of Open Access Journals (Sweden)

    H. Kaleli

    2016-06-01

    Full Text Available The present paper contains a description of a new Universal Tribometer design which enables simulation of different contact and test types such as pin-on-disc, ball-on-disc and linear reciprocating tests. There are many models of wear Tribometer in the world market. These devices are manufactured by various companies abroad and are imported to our country. Cost of this devices start from 50.000 euros and goes to hundreds of thousands of euros. One of the most commonly used of this device is Reciprocating Pin-on-Plate Tribo Test Machine. This wear tester is produced at a low limited cost within the KAP (Scientifical Research Project Coordinator of Yıldız Technical University. The test machine can work including three types of Tribotest rigs (Reciprocating Pin-on-Plate, Pin-on-Disc and Ball-on-Disc. It is designed to operate also at high temperatures up to 500 ˚C. The new piece of equipment allows instrumented tribological testing of piston ring and cylinder liner samples at low and high temperatures and boundary lubrication conditions of any typical gasoline or Diesel engines. Some friction results were shown in boundary lubricating conditions between piston ring and cylinder liner sliding pairs describing Tribotest machine is driven by AC servo motor which is more accurate than DC motor.

  18. Development of spectral history methods for pin-by-pin core analysis method using three-dimensional direct response matrix

    International Nuclear Information System (INIS)

    Mitsuyasu, T.; Ishii, K.; Hino, T.; Aoyama, M.

    2009-01-01

    Spectral history methods for pin-by-pin core analysis method using the three-dimensional direct response matrix have been developed. The direct response matrix is formalized by four sub-response matrices in order to respond to a core eigenvalue k and thus can be recomposed at each outer iteration in the core analysis. For core analysis, it is necessary to take into account the burn-up effect related to spectral history. One of the methods is to evaluate the nodal burn-up spectrum obtained using the out-going neutron current. The other is to correct the fuel rod neutron production rates obtained the pin-by-pin correction. These spectral history methods were tested in a heterogeneous system. The test results show that the neutron multiplication factor error can be reduced by half during burn-up, the nodal neutron production rates errors can be reduced by 30% or more. The root-mean-square differences between the relative fuel rod neutron production rate distributions can be reduced within 1.1% error. This means that these methods can accurately reflect the effects of intra- and inter-assembly heterogeneities during burn-up and can be used for core analysis. Core analysis with the DRM method was carried out for an ABWR quarter core and it was found that both thermal power and coolant-flow distributions were smoothly converged. (authors)

  19. Electron injection in diodes with field emission

    International Nuclear Information System (INIS)

    Denavit, J.; Strobel, G.L.

    1986-01-01

    This paper presents self-consistent steady-state solutions of the space charge, transmitted current, and return currents in diodes with electron injection from the cathode and unlimited field emission of electrons and ions from both electrodes. Time-dependent particle simulations of the diode operation confirm the analytical results and show how these steady states are reached. The results are applicable to thermionic diodes and to photodiodes

  20. Electromagnetic wave analogue of electronic diode

    OpenAIRE

    Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...