Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

Science.gov (United States)

Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

2013-09-01

Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

Noise in a-Si:H p-i-n detector diodes

International Nuclear Information System (INIS)

Cho, G.; Qureshi, S.; Drewery, J.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D.

1991-10-01

Noise of a-Si:H p-i-n diodes (5 ∼ 50 μm thick) under reverse bias was investigated. The current dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and of the metallic contacts is the dominant noise source which is unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by a factor 2 approximately. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise there seems to be a shaping time independent noise component at zero biased diodes

The 1/f noise in a p-i-n diode and in a diode laser below threshold

NARCIS (Netherlands)

Fronen, R.J.; Hooge, F.N.

1991-01-01

--A theoretical treatment is given of number fluctuations induced by mobility fluctuations in the intrinsic region of a p-i-n diode. Mobility fluctuations lead to fluctuations in voltage across the intrinsic region. In the a.c. short-circuit situation, fluctuations across the intrinsic region result

11.72 sq cm SiC Wafer-scale Interconnected 64 kA PiN Diode

Science.gov (United States)

2012-01-30

drop of 10.3 V. The dissipated energy was 382 J and the calculated action exceeded 1.7 MA2 -s. Preliminary development of high voltage interconnection...scale diode action (surge current integral), a key reliability parameter, exceeded 1.7 MA2 -s. Figure 6: The wafer-scale interconnected diode...scale diode was 382 J and the calculated action exceeded 1.7 MA2 -sec. High voltage operation of PiN diodes, thyristors, and other semiconductor

Lifetime control of the minority carrier in PiN diodes by He+ ion implantation

International Nuclear Information System (INIS)

Tanaka, Y.; Kojima, K.; Takao, K.; Okamoto, M.; Kawasaki, M.; Takatsuka, A.; Yatsuo, T.; Arai, K.

2005-01-01

This paper reports the first demonstration of the lifetime control of the minority carrier in 4H-SiC PiN diodes by He + ion implantation. In this work, we fabricated 4H-SiC PiN diodes with the epitaxial junction and the blocking voltage of 2.6 kV, precisely corresponding to the theoretical blocking voltage calculated from the doping concentration (4.0 x 10 15 /cm 2 ) and the thickness of the drift layer (16.5 μm). He + ion implantation was performed with the energy and the dose of 400 kV and 1.0 x 10 13 -2.0 x 10 14 /cm 2 , respectively. We observed no different characteristics in the blocking voltage (2.6kV) and leakage current ( + ion implantation. However, we confirmed the improvement of the current recovery characteristics in the diodes with He + ion implantation. (orig.)

Time-of-flight measurements of heavy ions using Si PIN diodes

Energy Technology Data Exchange (ETDEWEB)

Strekalovsky, A. O., E-mail: alex.strek@bk.ru; Kamanin, D. V. [Joint Institute for Nuclear Research (Russian Federation); Pyatkov, Yu. V. [National Nuclear Research University MEPhI (Moscow Engineering Physics Institute) (Russian Federation); Kondratyev, N. A.; Zhuchko, V. E. [Joint Institute for Nuclear Research (Russian Federation); Ilić, S. [University of Novi Sad (Serbia); Alexandrov, A. A.; Alexandrova, I. A. [Joint Institute for Nuclear Research (Russian Federation); Jacobs, N. [University of Stellenbosch, Faculty of Military Science, Military Academy (South Africa); Kuznetsova, E. A.; Mishinsky, G. V.; Strekalovsky, O. V. [Joint Institute for Nuclear Research (Russian Federation)

2016-12-15

A new off-line timing method for PIN diode signals is presented which allows the plasma delay effect to be suppressed. Velocities of heavy ions measured by the new method are in good agreement within a wide range of masses and energies with velocities measured by time stamp detectors based on microchannel plates.

Correction of measured Gamma-Knife output factors for angular dependence of diode detectors and PinPoint ionization chamber.

Science.gov (United States)

Hršak, Hrvoje; Majer, Marija; Grego, Timor; Bibić, Juraj; Heinrich, Zdravko

2014-12-01

Dosimetry for Gamma-Knife requires detectors with high spatial resolution and minimal angular dependence of response. Angular dependence and end effect time for p-type silicon detectors (PTW Diode P and Diode E) and PTW PinPoint ionization chamber were measured with Gamma-Knife beams. Weighted angular dependence correction factors were calculated for each detector. The Gamma-Knife output factors were corrected for angular dependence and end effect time. For Gamma-Knife beams angle range of 84°-54°. Diode P shows considerable angular dependence of 9% and 8% for the 18 mm and 14, 8, 4 mm collimator, respectively. For Diode E this dependence is about 4% for all collimators. PinPoint ionization chamber shows angular dependence of less than 3% for 18, 14 and 8 mm helmet and 10% for 4 mm collimator due to volumetric averaging effect in a small photon beam. Corrected output factors for 14 mm helmet are in very good agreement (within ±0.3%) with published data and values recommended by vendor (Elekta AB, Stockholm, Sweden). For the 8 mm collimator diodes are still in good agreement with recommended values (within ±0.6%), while PinPoint gives 3% less value. For the 4 mm helmet Diodes P and E show over-response of 2.8% and 1.8%, respectively. For PinPoint chamber output factor of 4 mm collimator is 25% lower than Elekta value which is generally not consequence of angular dependence, but of volumetric averaging effect and lack of lateral electronic equilibrium. Diodes P and E represent good choice for Gamma-Knife dosimetry. Copyright © 2014 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Signal amplification and leakage current suppression in amorphous silicon p-i-n diodes by field profile tailoring

International Nuclear Information System (INIS)

Hong, W.S.; Zhong, F.; Mireshghi, A.; Perez-Mendez, V.

1999-01-01

The performance of amorphous silicon p-i-n diodes as radiation detectors in terms of signal amplitude can be greatly improved when there is a built-in signal gain mechanism. The authors describe an avalanche gain mechanism which is achieved by introducing stacked intrinsic, p-type, and n-type layers into the diode structure. They replaced the intrinsic layer of the conventional p-i-n diode with i 1 -p-i 2 -n-i 3 multilayers. The i 2 layer (typically 1 ∼ 3 microm) achieves an electric field > 10 6 V/cm, while maintaining the p-i interfaces to the metallic contact at electric fields 4 V/cm, when the diode is fully depleted. For use in photo-diode applications the whole structure is less than 10 microm thick. Avalanche gains of 10 ∼ 50 can be obtained when the diode is biased to ∼ 500 V. Also, dividing the electrodes to strips of 2 microm width and 20 microm pitch reduced the leakage current up to an order of magnitude, and increased light transmission without creating inactive regions

Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiation

Energy Technology Data Exchange (ETDEWEB)

Sopko, V. [Hospital Na Bulovce, Department of Radiological Physics, Budinova 2, CZ-18081 Prague 8 (Czech Republic); Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, CZ 12800 Prague 2 (Czech Republic); Sopko, B., E-mail: bruno.sopko@cern.ch [Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, CZ 16000 Prague 6 (Czech Republic); Faculty of Production Technology and Management, J. E. Purkyně Univerzity in Ústí nad Labem, Na Okraji 1001, 400 01 Ústí nad Labem (Czech Republic); Chren, D. [Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, CZ 16000 Prague 6 (Czech Republic); Dammer, J. [Hospital Na Bulovce, Department of Radiological Physics, Budinova 2, CZ-18081 Prague 8 (Czech Republic); Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, CZ 12800 Prague 2 (Czech Republic); Charles University in Prague, First Faculty of Medicine, Salmovská 1,CZ-12000 Prague 2 (Czech Republic)

2013-12-01

Studies of radiation induced defects continue to be relevant as they find an ever greater application due to the increasing radiation doses to which semiconductor detectors are exposed. Efforts of figuring out the changes due to high radiation doses provide the fundamental motivation for this type of experiments. The PIN diode is described, and a developmental disorder caused thereto by 60Co source gamma quanta ranging from 100 kGy to 1 MGy. The calibration curve shows the effect of disturbances on the volt-ampere characteristics as a function of the dose of gamma radiation. The results are compared with earlier published data. Highlights: •We have studied Si PIN diode dosimeters irradiated by gamma. •We measured DLTS spectra and calculated energy traps caused by gamma irradiation. •Increasing dose caused creation of new traps and disappearance of others.

Influence of irradiation on defects creation in pin diode structure

International Nuclear Information System (INIS)

Sopko, V.; Dammer, J.; Sopko, B.; Chren, D.

2012-01-01

In this paper the manufacture of type S1 PIN diodes and radiation defect induce by fast neutrons were studied. A shift from VV"- to VV (neutral) is observed in neutron irradiated diodes. From the results obtained, an explanation that clearly offers itself is that the nature of the defects produced by irradiation of material exhibiting N type conductivity is different from those for type P material. Given that the experiments were conducted with the same material, i.e., the dopant present in the material remained unchanged, it can be stated that simply by changing the type of conductivity with increasing dose, a different kind of defects is produced, having different activation energies in the forbidden band. All these results are consistent with the ongoing RD 50 experiments at CERN.

Simulation of Si P-i-N diodes for use in a positron emission tomography detector module

International Nuclear Information System (INIS)

Bailey, M.J.; University of Wollongong, NSW; Rosenfeld, A.; Lerch, M.; Taylor, G.; Heiser, G.

2000-01-01

Full text: Current Positron Emission Tomography (PET) systems consist of scintillation crystals optically coupled to photomultiplier tubes with associated electronics used to detect photons generated within the scintillator. The cost of photomultiplier tubes (PMTs) is considerable and is the major factor in the cost of PET systems. It has been suggested that Si P-i-N diodes can replace PMTs and provide Depth of Interaction (DOI) information for improved spatial resolution. Si P-i-N diodes of 25mm x 300μm and 3mm x 300μm cross sectional area were simulated using a 2D Monte Carlo program (PClD V5) from the UNSW photovoltics group. The diffusion lengths were varied from 0.5μm to 5μm and the charge collection characteristics of the diodes were observed. A 400nm monochromatic light source was used for the excitation as an approximation of the mean wavelength output from LSO crystal. The diodes were reverse biased with voltages 40V, 20V and 10V. The optimum diffusion length of up to 2μm and bias voltage of 40V were determined using the electric field, current density, carrier density and potential distribution results. These parameters will be used for the design of a device for optimal charge collection capabilities for the wavelengths encountered in PET applications. Further studies need to be conducted using spectra from LSO rather than a monochromatic source. The response of various Si P-i-N diodes to a monochromatic light source have been modeled in order to design a device for application in a PET detector module for DOI measurements. The charge collection within the first 2μm has been emphasized due to the strong absorption of photons from LSO near the surface.Copyright (2000) Australasian College of Physical Scientists and Engineers in Medicine

Design and characterization of GaN p-i-n diodes for betavoltaic devices

Science.gov (United States)

Khan, Muhammad R.; Smith, Joshua R.; Tompkins, Randy P.; Kelley, Stephen; Litz, Marc; Russo, John; Leathersich, Jeff; Shahedipour-Sandvik, Fatemeh (Shadi); Jones, Kenneth A.; Iliadis, Agis

2017-10-01

The performance of gallium nitride (GaN) p-i-n diodes were investigated for use as a betavoltaic device. Dark IV measurements showed a turn on-voltage of approximately 3.2 V, specific-on-resistance of 15.1 mΩ cm2 and a reverse leakage current of -0.14 mA/cm2 at -10 V. A clear photo-response was observed when IV curves were measured under a light source at a wavelength of 310 nm (4.0 eV). In addition, GaN p-i-n diodes were tested under an electron-beam in order to simulate common beta radiation sources ranging from that of 3H (5.6 keV average) to 63Ni (17 keV average). From this data, we estimated output powers of 53 nW and 750 nW with overall efficiencies of 0.96% and 4.4% for our device at incident electron energies of 5.6 keV and 17 keV corresponding to 3H and 63Ni beta sources respectively.

Characterization of Lateral Structure of the p-i-n Diode for Thin-Film Silicon Solar Cell.

Science.gov (United States)

Kiaee, Zohreh; Joo, Seung Ki

2018-03-01

The lateral structure of the p-i-n diode was characterized for thin-film silicon solar cell application. The structure can benefit from a wide intrinsic layer, which can improve efficiency without increasing cell thickness. Compared with conventional thin-film p-i-n cells, the p-i-n diode lateral structure exploited direct light irradiation on the absorber layer, one-side contact, and bifacial irradiation. Considering the effect of different carrier lifetimes and recombinations, we calculated efficiency parameters by using a commercially available simulation program as a function of intrinsic layer width, as well as the distance between p/i or n/i junctions to contacts. We then obtained excellent parameter values of 706.52 mV open-circuit voltage, 24.16 mA/Cm2 short-circuit current, 82.66% fill factor, and 14.11% efficiency from a lateral cell (thickness = 3 μm; intrinsic layer width = 53 μm) in monofacial irradiation mode (i.e., only sunlight from the front side was considered). Simulation results of the cell without using rear-side reflector in bifacial irradiation mode showed 11.26% front and 9.72% rear efficiencies. Our findings confirmed that the laterally structured p-i-n cell can be a potentially powerful means for producing highly efficient, thin-film silicon solar cells.

A filter technique for optimising the photon energy response of a silicon pin diode dosemeter

International Nuclear Information System (INIS)

Olsher, R.H.; Eisen, Y.

1996-01-01

Unless they are energy compensated, silicon PIN diodes used in electronic pocket dosemeters, have significant over-response below 200 keV. Siemens is using three diodes in parallel with individual filters to produce excellent energy and angular response. An algorithm based on the photon spectrum of a single diode could be used to flatten the energy response. The commercial practice is to use a single diode with a simple filter to flatten the energy response, despite the mediocre low energy photon. The filter technique with an opening has been used for energy compensating GM detectors and proportional counters and a new variation of it has been investigated which compensates the energy response of a silicon PIN diode and maintains an extended low energy response. It uses a composite filter of two or more materials with several openings whose individual area is in the range of 15% to 25% of the diode's active area. One opening is centred over the diode's active area and others are located at the periphery of the active area to preserve a good polar response to ±45 o . Monte Carlo radiation transport methods were used to simulate the coupled electron-photon transport through a Hamamatsu S2506-01 diode and to determine the energy response of the diode for a variety of filters. In current mode, the resultant dosemeter energy response relative to air dose was within -15% and +30% for 0 o incidence over the energy range from 15 keV to 1 MeV. In pulse mode, the resultant dosemeter energy response was within -25% and +50% for 0 o incidence over the energy range from 30 keV to 10 MeV. For ±45 o incidence, the energy response was within -25% and +40% from 40 keV to 10 MeV. Theoretical viability of the filter technique has been shown in this work (Author)

Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences

CERN Document Server

Mekki, J; Glaser, M; Moll, M; Dusseau, L

2010-01-01

The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 x 10(15) n(eq)/cm(2) have been measured and analyzed. A parameterization predicting the radiation response in the fluence range relevant for the use of the diodes as radiation monitors in Super-LHC experiments is presented.

Temperature dependent simulation of diamond depleted Schottky PIN diodes

International Nuclear Information System (INIS)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti; Goodnick, Stephen M.; Koeck, Franz A. M.; Nemanich, Robert J.

2016-01-01

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco ® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

Temperature dependent simulation of diamond depleted Schottky PIN diodes

Science.gov (United States)

Hathwar, Raghuraj; Dutta, Maitreya; Koeck, Franz A. M.; Nemanich, Robert J.; Chowdhury, Srabanti; Goodnick, Stephen M.

2016-06-01

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

Temperature dependent simulation of diamond depleted Schottky PIN diodes

Energy Technology Data Exchange (ETDEWEB)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti; Goodnick, Stephen M. [Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-8806 (United States); Koeck, Franz A. M.; Nemanich, Robert J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-8806 (United States)

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.

Design of a terahertz CW photomixer based on PIN and superlattice PIN devices

DEFF Research Database (Denmark)

Krozer, Viktor; Eichhorn, Finn

2006-01-01

We present the design of a photomixer LO based on standard and superlattice PIN diodes, operating at 1 THz. The design is based on a direct integration of a double slot antenna with the PIN device and a suitable matching circuit. The antenna has been designed together with a dielectric lens using...... Ansoft HFSS EM simulation. The large-signal PIN diode model employed in the work has been improved compared to our previously developed model presented earlier in a 3 THz design. We demonstrate that the antenna characteristic changes drastically with the device in place....

Characteristics of Si-PIN diode X-ray detector with DSP electronics

International Nuclear Information System (INIS)

Dutta, Juhi; Tapader, Srijita; Bisoi, Abhijit; Ray, Sudatta; Saha Sarkar, M.; Pramanik, Dibyadyuti; Saha, Archisman

2012-01-01

In the present work, the studies to investigate the features of PIN diodes detector coupled with a digital processor have been extended. At low energies, backscattered Compton peaks are close in energy to photo peak of the gamma of interest. Thus the backscattered peaks pose a serious problem in the analysis of spectra of low energy gamma rays. It has been initiated some measurements to quantitatively estimate the same as function of energy and Z of the scatterer. Recently there has been application of backscattering in high-resolution gamma backscatter imaging for technical applications

Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

International Nuclear Information System (INIS)

Sirkeli, Vadim P; Al-Daffaie, Shihab; Oprea, Ion; Küppers, Franko; Hartnagel, Hans L; Yilmazoglu, Oktay; Ong, Duu Sheng

2017-01-01

Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm −2 . It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm −2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier. (paper)

Leakage current of amorphous silicon p-i-n diodes made by ion shower doping

International Nuclear Information System (INIS)

Kim, Hee Joon; Cho, Gyuseong; Choi, Joonhoo; Jung, Kwan-Wook

2002-01-01

In this letter, we report the leakage current of amorphous silicon (a-Si:H) p-i-n photodiodes, of which the p layer is formed by ion shower doping. The ion shower doping technique has an advantage over plasma-enhanced chemical vapor deposition (PECVD) in the fabrication of a large-area amorphous silicon flat-panel detector. The leakage current of the ion shower diodes shows a better uniformity within a 30 cmx40 cm substrate than that of the PECVD diodes. However, it shows a higher leakage current of 2-3 pA/mm 2 at -5 V. This high current originates from the high injection current at the p-i junction

Silicon Waveguide with Lateral p-i-n Diode for Nonlinearity Compensation by On-Chip Optical Phase Conjugation

DEFF Research Database (Denmark)

Gajda, A.; Da Ros, Francesco; Porto da Silva, Edson

2018-01-01

A 1-dB Q-factor improvement through optical phase conjugation in a silicon waveguide with a lateral p-i-n diode enables BER

A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure.

Science.gov (United States)

Kamehama, Hiroki; Kawahito, Shoji; Shrestha, Sumeet; Nakanishi, Syunta; Yasutomi, Keita; Takeda, Ayaki; Tsuru, Takeshi Go; Arai, Yasuo

2017-12-23

This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel. The back-gate surface pinning structure using neutralized p-well at the back-gate surface and depleted n-well underneath the p-well for all the pixel area other than the charge sensing node is also essential for preventing hole injection from the p-well by making the potential barrier to hole, reducing dark current from the Si-SiO₂ interface and creating lateral drift field to gather signal electrons in the pixel area into the small charge sensing node. A prototype chip using 0.2 μm SOI technology shows very low readout noise of 11.0 e - rms , low dark current density of 56 pA/cm² at -35 °C and the energy resolution of 200 eV(FWHM) at 5.9 keV and 280 eV (FWHM) at 13.95 keV.

CsI/PIN Diode Detector Manufacture and Gamma-ray Response Measurement

International Nuclear Information System (INIS)

Ha, Jang Ho; Park, Se Hwan; Kang, Sang Mook; Kim, Yong Kyun; Lee, Wo Kyu

2007-01-01

In the nuclear industry changes fast to expand from conventional industry to newly emerging market industry. Such industries are environment and security field. Conventional devices to field-orientation application are too heavy not enough to be hand held. Especially emerging environment and security markets need a device which should be handheld and available long term battery operation. Photomultiplier based detection system could not satisfied these requirements. One of the promising system is the scintillator/PIN diode device. Present investigation is motivated for the purpose of developing a gamma-ray monitoring system with nuclei identification and small and light enough to be transportable by worker

Comparison of silicon pin diode detector fabrication processes using ion implantation and thermal doping

International Nuclear Information System (INIS)

Zhou, C.Z.; Warburton, W.K.

1996-01-01

Two processes for the fabrication of silicon p-i-n diode radiation detectors are described and compared. Both processes are compatible with conventional integrated-circuit fabrication techniques and yield very low leakage currents. Devices made from the process using boron thermal doping have about a factor of 2 lower leakage current than those using boron ion implantation. However, the boron thermal doping process requires additional process steps to remove boron skins. (orig.)

Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

International Nuclear Information System (INIS)

Schulze, J.; Oehme, M.; Werner, J.

2012-01-01

A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that – depending on the chosen operating point and device design – the diode serves as a broadband high speed photo detector, Franz–Keldysh effect modulator or light emitting diode.

Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

Energy Technology Data Exchange (ETDEWEB)

Schulze, J., E-mail: schulze@iht.uni-stuttgart.de; Oehme, M.; Werner, J.

2012-02-01

A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that - depending on the chosen operating point and device design - the diode serves as a broadband high speed photo detector, Franz-Keldysh effect modulator or light emitting diode.

Gamma-ray vulnerability of light-emitting diodes injection-laser diodes and pin-photodiodes for 1.3 μm wavelength-fiber optics

International Nuclear Information System (INIS)

Breuze, G.; Serre, J.

1992-01-01

With the increasing use of optical data links, it becomes essential to test for radiation vulnerability not only the transmission support - fiber and cable - but also fiber-end electro-optical components that could be exposed to hostile environment. Presently there is a significant number of radiation tests of optical fibers [1,2,3[. Here are only given a few results obtained on gradient index multimode fibers with and without phosphor. These data provide an important contribution to the improvement of all standard electro-optical pigtailed components working on the 1.3 μm wavelength: light-emitting diodes (LED), injection-laser diode modules (LDM) and pin-photodiodes (PD). Multicomponent LDM behaviour under CO 60 exposure was extensively tested. Hardened optical data links allow now to ensure medium data transmission rates on appreciable fiber - lengths despite medium steady - state gamma-ray exposure

Near space radiation dosimetry in Australian outback using a balloon borne energy compensated PIN diode detector

International Nuclear Information System (INIS)

Mukherjee, Bhaskar; Wu, Xiaofeng; Maczka, Tomasz; Kwan, Trevor; Huang, Yijun; Mares, Vladimir

2016-01-01

This paper reports the near space ballooning experiment carried out at Australian outback town West Wyalong (33°51′S, 147°24′E) on 19 July 2015. Several dedicated electronic detectors including digital temperature and acceleration (vibration) sensors and an energy compensated PIN-diode gamma ray dosimeter were installed in a thermally insulated Styrofoam payload box. A 9 V Lithium-Polymer battery powered all the devices. The payload box was attached to a helium-filled latex weather balloon and set afloat. The balloon reached a peak burst altitude of 30 km and then soft-landed aided by a self-deploying parachute 66.2 km away form the launch site. The payload box was retrieved and data collected from the electronic sensors analysed. The integrated cosmic ray induced photon ambient dose equivalent recorded by the PIN diode detector was evaluated to be 0.36 ± 0.05 μSv. Furthermore, a high-altitude extended version of commercially available aviation dosimetry package EPCARD.Net (European Program package for the Calculation of Aviation Route Doses) was used to calculate the ambient dose equivalents during the balloon flight. The radiation environment originated from the secondary cosmic ray shower is composed of neutrons, protons, electrons, muons, pions and photons. The photon ambient dose equivalent estimated by the EPCARD.Net code found to be 0.47 ± 0.09 μSv. The important aspects of balloon based near-space radiation dosimetry are highlighted in this paper. - Highlights: • Near space ballooning experiment in Australian outback. • A PIN diode based gamma dosimeter was sent to an altitude of 30 km. • Ambient photon dose equivalent was evaluated as a function of altitude. • Results agreed well with the simulated data delivered by EPCARD.Net Code. • The atmospheric temperature and payload jerks were also assessed.

Radiation detectors of PIN type for X-rays

International Nuclear Information System (INIS)

Ramirez-Jimenez, F.J.

2003-01-01

In this laboratory session, tree experiments are proposed: the measurement of X-ray energy spectra from radioactive sources with a high resolution cooled Si-Li detector, with a room temperature PIN diode and the measurement of the response of a PIN diode to the intensity of X-rays of radio-diagnostic units. The spectra obtained with the Si-Li detector help to understand the energy distribution of X-rays and are used as a reference to compare the results obtained with the PIN diode. Measurements in medical X-ray machines are proposed. Low cost, simple electronic instruments and systems are used as tools to make measurements in X-ray units used in radio-diagnostic

Performances of Dose Measurement of Commercial Electronic Dosimeters using Geiger Muller Tube and PIN Diode

Energy Technology Data Exchange (ETDEWEB)

Yoo, Hyunjun; Kim, Chankyu; Kim, Yewon; Kim, Giyoon; Cho, Gyuseong [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

2014-05-15

There are two categories in personal dosimeters, one is passive type dosimeter such as TLD (thermoluminescence dosimeter) and the other is active type dosimeter such as electronic dosimeter can show radiation dose immediately while TLD needs long time to readout its data by heating process. For improving the reliability of measuring dose for any energy of radiations, electronic dosimeter uses energy filter by metal packaging its detector using aluminum or copper, but measured dose of electronic dosimeter with energy filter cannot be completely compensated in wide radiation energy region. So, in this paper, we confirmed the accuracy of dose measurement of two types of commercial EPDs using Geiger Muller tube and PIN diode with CsI(Tl) scintillator in three different energy of radiation field. The experiment results for Cs-137 was almost similar with calculation value in the results of both electronic dosimeters, but, the other experiment values with Na-22 and Co-60 had higher error comparing with Cs-137. These results were caused by optimization of their energy filters. The optimization was depending on its thickness of energy filter. So, the electronic dosimeters have to optimizing the energy filter for increasing the accuracy of dose measurement or the electronic dosimeter using PIN diode with CsI(Tl) scintillator uses the multi-channel discriminator for using its energy information.

Artificial pinning center technology to enhance vortex pinning in YBCO coated conductors

International Nuclear Information System (INIS)

Matsumoto, Kaname; Mele, Paolo

2010-01-01

Crystalline defects on the nano-scale, which are called artificial pinning centers (APCs), were successfully introduced into high-temperature superconductors (HTS) by nanotechnology, in order to strongly pin the quantized vortices. The critical current densities, J c , of the HTS films were dramatically improved by APCs. It is possible to form APCs in high-quality epitaxial films, keeping the desired dimensionality, volume fraction, spatial distribution and so on. The in-field J c of HTS films at 77 K was improved by one order of magnitude compared with previous values using APCs. This technology can be applied to the coated conductor technology in progress, and a high J c has already been reported. A current outline of the research is described in this review.

Conception and modelling of photo-detection pixels. PIN photodiodes conceived in amorphous silicon for particles detection

International Nuclear Information System (INIS)

Negru, R.

2008-06-01

The research done has revealed that the a-Si:H is a material ideally suited for the detection of particles, while being resistant to radiation. It also has a low manufacturing cost, is compatible with existing technology and can be deposited over large areas. Thus, despite the low local mobility of charges (30 cm 2 /V/s), a-Si:H is a material of particular interest for manufacturing high-energy particle detection pixels. As a consequence of this, we have studied the feasibility of an experimental pixel stacked structure based on a-Si:H as a basic sensor element for an electromagnetic calorimeter. The structure of such a pixel consists of different components. First, a silicon PIN diode in a-Si:H is fabricated, followed by a bias resistor and a decoupling capacitor. Before such a structure is made and in order to optimize its design, it is essential to have an efficient behavioural model of the various components. Thus, our primary goal was to develop a two-dimensional physical model of the PIN diode using the SILVACO finite element calculation software. This a-Si:H PIN diode two-dimensional physical model allowed us to study the problem of crosstalk between pixels in a matrix structure of detectors. In particular, we concentrated on the leakage current and the current generated in the volume between neighbouring pixels. The successful implementation of this model in SPICE ensures its usefulness in other professional simulators and especially its integration into a complete electronic structure (PIN diode, bias resistor, decoupling capacity and low noise amplifier). Thanks to these modelling tools, we were able to simulate PIN diode structures in a-Si:H with different thicknesses and different dimensions. These simulations have allowed us to predict that the thicker structures are relevant to the design of the pixel detectors for high energy physics. Applications in astronomy, medical imaging and the analysis of the failure of silicon integrated circuits, can also

Conception and modelling of photo-detection pixels. PIN photodiodes conceived in amorphous silicon for particles detection; Conception et modelisation de pixels de photodetection: Photodiodes PIN en silicium amorphe en vue de leurs utilisations comme detecteurs de particules

Energy Technology Data Exchange (ETDEWEB)

Negru, R

2008-06-15

The research done has revealed that the a-Si:H is a material ideally suited for the detection of particles, while being resistant to radiation. It also has a low manufacturing cost, is compatible with existing technology and can be deposited over large areas. Thus, despite the low local mobility of charges (30 cm{sup 2}/V/s), a-Si:H is a material of particular interest for manufacturing high-energy particle detection pixels. As a consequence of this, we have studied the feasibility of an experimental pixel stacked structure based on a-Si:H as a basic sensor element for an electromagnetic calorimeter. The structure of such a pixel consists of different components. First, a silicon PIN diode in a-Si:H is fabricated, followed by a bias resistor and a decoupling capacitor. Before such a structure is made and in order to optimize its design, it is essential to have an efficient behavioural model of the various components. Thus, our primary goal was to develop a two-dimensional physical model of the PIN diode using the SILVACO finite element calculation software. This a-Si:H PIN diode two-dimensional physical model allowed us to study the problem of crosstalk between pixels in a matrix structure of detectors. In particular, we concentrated on the leakage current and the current generated in the volume between neighbouring pixels. The successful implementation of this model in SPICE ensures its usefulness in other professional simulators and especially its integration into a complete electronic structure (PIN diode, bias resistor, decoupling capacity and low noise amplifier). Thanks to these modelling tools, we were able to simulate PIN diode structures in a-Si:H with different thicknesses and different dimensions. These simulations have allowed us to predict that the thicker structures are relevant to the design of the pixel detectors for high energy physics. Applications in astronomy, medical imaging and the analysis of the failure of silicon integrated circuits, can

High-speed and efficient silicon modulator based on forward-biased pin diodes

Directory of Open Access Journals (Sweden)

Suguru eAkiyama

2014-11-01

Full Text Available Silicon modulators, which use the free-carrier-plasma effect, were studied, both analytically and experimentally. It was demonstrated that the loss-efficiency product, a-VpL, was a suitable figure of merit for silicon modulators that enabled their intrinsic properties to be compared. Subsequently, the dependence of VpL on frequency was expressed by using the electrical parameters of a phase shifter when the modulator was operated by assuming a simple driving configuration. A diode-based modulator operated in forward biased mode was expected from analyses to provide more efficient operation than that in reversed mode at high frequencies due to its large capacitance. We obtained an a-VpL of 9.5 dB-V at 12.5 GHz in experiments by using the fabricated phase shifter with pin diodes operated in forward biased mode. This a-VpL was comparable to the best modulators operated in depletion mode. The modulator exhibited a clear eye opening at 56 Gb/s operated by 2 V peak-to-peak signals that was achieved by incorporating such a phase shifter into a ring resonator.

BPW34 Commercial p-i-n Diodes for High-Level 1-MeV Neutron Equivalent Fluence Monitoring

CERN Document Server

Ravotti, F; Moll, M; Saigne, F

2008-01-01

The BPW34 p-i-n diode was characterized at CERN in view of its utilization as radiation monitor at the LHC to cover the broad 1-MeV neutron equivalent fluence (Phieq) range expected for the LHC machine and experiments during operation. Electrical measurements for both forward and reverse bias were used to characterize the device and to understand its behavior under irradiation. When the device is powered forward, a sensitivity to fast hadrons for Phieq > 2 times1012 cm-2 has been observed. With increasing particle fluences the forward I- V characteristics of the diode shifts towards higher voltages. At Phieq > 3times1013 cm-2, the forward characteristic starts to bend back assuming a thyristor-like behavior. An explanation for this phenomenon is given in this article. Finally, detailed radiation-response curves for the forward bias-operation and annealing studies of the diode's forward voltage are presented for proton, neutron and gamma irradiation.

Measurements of 1/f noise in A-Si:H pin diodes and thin-film-transistors

International Nuclear Information System (INIS)

Cho, Gyuseong; Drewery, J.S.; Fujieda, I.; Jing, T.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Wildermuth, D.; Street, R.A.

1990-05-01

We measured the equivalent noise charge of a-Si:H pin diodes (5 ∼ 45μm i-layer) with a pulse shaping time of 2.5 μsec under reverse biases up to 30 V/μm and analyzed it as a four component noise source. The frequency spectra of 1/f noise on the soft-breakdown region and of the Nyquist noise from contact resistance of diodes were measured. Using the conversion equations for a CR-RC shaper, we identified the contact resistance noise and the 1/f noise as the main noise sources in the low bias and high bias regions respectively. The 1/f noise of a-Si:H TFTs with channel length of 15 μm was measured to be the dominant component up to ∼100kHz for both saturation and linear regions. 15 refs., 7 figs

Luminescence in amorphous silicon p-i-n diodes under double-injection dispersive-transport-controlled recombination

International Nuclear Information System (INIS)

Han, D.; Wang, K.; Yeh, C.; Yang, L.; Deng, X.; Von Roedern, B.

1997-01-01

The temperature and electric-field dependence of the forward bias current and the electroluminescence (EL) in hydrogenated amorphous silicon (a-Si:H) p-i-n and n-i-p diodes have been studied. Both the current and the EL efficiency temperature dependence show three regions depending on either hopping-controlled or multiple-trapping or ballistic transport mechanisms. Comparing the thermalization-controlled geminate recombination processes of photoluminescence to the features of EL, the differences can be explained by transport-controlled nongeminate recombination in trap-rich materials. copyright 1997 The American Physical Society

Integrated chemical sensor array platform based on a light emitting diode, xerogel-derived sensor elements, and high-speed pin printing

International Nuclear Information System (INIS)

Cho, Eun Jeong; Bright, Frank V.

2002-01-01

We report a new, solid-state, integrated optical array sensor platform. By using pin printing technology in concert with sol-gel-processing methods, we form discrete xerogel-based microsensor elements that are on the order of 100 μm in diameter and 1 μm thick directly on the face of a light emitting diode (LED). The LED serves as the light source to excite chemically responsive luminophores sequestered within the doped xerogel microsensors and the analyte-dependent emission from within the doped xerogel is detected with a charge coupled device (CCD). We overcome the problem of background illumination from the LED reaching the CCD and the associated biasing that results by coating the LED first with a thin layer of blue paint. The thin paint layer serves as an optical filter, knocking out the LEDs red-edge spectral tail. The problem of the spatially-dependent fluence across the LED face is solved entirely by performing ratiometric measurements. We illustrate the performance of the new sensor scheme by forming an array of 100 discrete O 2 -responsive sensing elements on the face of a single LED. The combination of pin printing with an integrated sensor and light source platform results in a rapid method of forming (∼1 s per sensor element) reusable sensor arrays. The entire sensor array can be calibrated using just one sensor element. Array-to-array reproducibly is <8%. Arrays can be formed using single or multiple pins with indistinguishable analytical performance

A pin diode x-ray camera for laser fusion diagnostic imaging: Final technical report

International Nuclear Information System (INIS)

Jernigan, J.G.

1987-01-01

An x-ray camera has been constructed and tested for diagnostic imaging of laser fusion targets at the Laboratory for Laser Energetics (LLE) of the University of Rochester. The imaging detector, developed by the Hughes Aircraft Company, is a germanium PIN diode array of 10 x 64 separate elements which are bump bonded to a silicon readout chip containing a separate low noise amplifier for each pixel element. The camera assembly consists of a pinhole alignment mechanism, liquid nitrogen cryostat with detector mount and a thin beryllium entrance window, and a shielded rack containing the analog and digital electronics for operations. This x-ray camera has been tested on the OMEGA laser target chamber, the primary laser target facility of LLE, and operated via an Ethernet link to a SUN Microsystems workstation. X-ray images of laser targets are presented. The successful operation of this particular x-ray camera is a demonstration of the viability of the hybrid detector technology for future imaging and spectroscopic applications. This work was funded by the Department of Energy (DOE) as a project of the National Laser Users Facility (NLUF)

Lead Halide Perovskite Photovoltaic as a Model p-i-n Diode.

Science.gov (United States)

Miyano, Kenjiro; Tripathi, Neeti; Yanagida, Masatoshi; Shirai, Yasuhiro

2016-02-16

The lead halide perovskite photovoltaic cells, especially the iodide compound CH3NH3PbI3 family, exhibited enormous progress in the energy conversion efficiency in the past few years. Although the first attempt to use the perovskite was as a sensitizer in a dye-sensitized solar cell, it has been recognized at the early stage of the development that the working of the perovskite photovoltaics is akin to that of the inorganic thin film solar cells. In fact, theoretically perovskite is always treated as an ordinary direct band gap semiconductor and hence the perovskite photovoltaics as a p-i-n diode. Despite this recognition, research effort along this line of thought is still in pieces and incomplete. Different measurements have been applied to different types of devices (different not only in the materials but also in the cell structures), making it difficult to have a coherent picture. To make the situation worse, the perovskite photovoltaics have been plagued by the irreproducible optoelectronic properties, most notably the sweep direction dependent current-voltage relationship, the hysteresis problem. Under such circumstances, it is naturally very difficult to analyze the data. Therefore, we set out to make hysteresis-free samples and apply time-tested models and numerical tools developed in the field of inorganic semiconductors. A series of electrical measurements have been performed on one type of CH3NH3PbI3 photovoltaic cells, in which a special attention was paid to ensure that their electronic reproducibility was better than the fitting error in the numerical analysis. The data can be quantitatively explained in terms of the established models of inorganic semiconductors: current/voltage relationship can be very well described by a two-diode model, while impedance spectroscopy revealed the presence of a thick intrinsic layer with the help of a numerical solver, SCAPS, developed for thin film solar cell analysis. These results point to that CH3NH3PbI3 is an

A Codesigned Compact Dual-Band Filtering Antenna with PIN Loaded for WLAN Applications

Directory of Open Access Journals (Sweden)

Shanxiong Chen

2014-01-01

Full Text Available A codesigned compact dual-band filtering antenna incorporating a PIN diode for 2.45/5.2 GHz wireless local area network (WLAN applications is proposed in this paper. The integrated filtering antenna system consists of a simple monopole radiator, a microstrip dual-band band-pass filter, and a PIN diode. The performance of the filtering antenna is notably promoted by optimizing the impedance between the antenna and the band-pass filter, with good selectivity and out-of-band rejection. The design process follows the approach of the synthesis of band-pass filter. In addition, the PIN diode is incorporated in the filtering antenna for further size reduction, which also widens the coverage of the bandwidth by about 230% for 2.4 GHz WLAN. With the presence of small size and good filtering performances, the proposed filtering antenna is a good candidate for the wireless communication systems. Prototypes of the proposed filtering antenna incorporating a PIN diode are fabricated and measured. The measured results including return losses and radiation patterns are presented.

Development of wire wrapping technology for FBR fuel pin

International Nuclear Information System (INIS)

Nogami, Tetsuya; Seki, Nobuo; Sawayama, Takeo; Ishibashi, Takashi

1991-01-01

For the FBR fuel assembly, the spacer wire is adopted to maintain the space between fuel pins. The developments have been carried out to achieve automatically wire wrapping with high precision. Based on the fundamental technology developed through the mock-up test operation, Joyo 'MK-I', fuel pin fabrication was started using partially mechanized wire wrapping machine in 1973. In 1978, an automated wire wrapping machine for Joyo 'MK-II' was developed by the adoption of some improvements for the wire inserting system to end plug hole and the precision of wire pitch. On the bases of these experiences, fully automated wire wrapping machine for 'Monju' fuel pin was installed at Plutonium Fuel Production Facility (PFPF) in 1987. (author)

Suitability of integrated protection diodes from diverse semiconductor technologies

NARCIS (Netherlands)

van Wanum, Maurice; Lebouille, Tom; Visser, Guido; van Vliet, Frank Edward

2009-01-01

Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are

Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p-i-n diodes

Science.gov (United States)

Hayashi, Shohei; Naijo, Takanori; Yamashita, Tamotsu; Miyazato, Masaki; Ryo, Mina; Fujisawa, Hiroyuki; Miyajima, Masaaki; Senzaki, Junji; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

2017-08-01

Stacking faults expanded by the application of forward current to 4H-SiC p-i-n diodes were observed using a transmission electron microscope to investigate the expansion origin. It was experimentally confirmed that long-zonal-shaped stacking faults expanded from basal-plane dislocations converted into threading edge dislocations. In addition, stacking fault expansion clearly penetrated into the substrate to a greater depth than the dislocation conversion point. This downward expansion of stacking faults strongly depends on the degree of high-density minority carrier injection.

Monte Carlo simulation of THz radiation from GaAs p-i-n diodes under high electric fields using an extended valley model

International Nuclear Information System (INIS)

Dinh Nhu Thao

2008-01-01

We have applied a self-consistent ensemble Monte Carlo simulation procedure using an extended valley model to consider the THz radiation from GaAs p-i-n diodes under high electric fields. The present calculation has shown an important improvement of the numerical results when using this model instead of the usual valley model. It has been shown the importance of the full band-structure in the simulation of processes in semiconductors, especially under the influence of high electric fields. (author)

Silicon PIN diode hybrid arrays for charged particle detection: Building blocks for vertex detectors at the SSC

International Nuclear Information System (INIS)

Kramer, G.; Gaalema, S.; Shapiro, S.L.; Dunwoodie, W.M.; Arens, J.F.; Jernigan, J.G.

1989-05-01

Two-dimensional arrays of solid state detectors have long been used in visible and infrared systems. Hybrid arrays with separately optimized detector and readout substrates have been extensively developed for infrared sensors. The characteristics and use of these infrared readout chips with silicon PIN diode arrays produced by MICRON SEMICONDUCTOR for detecting high-energy particles are reported. Some of these arrays have been produced in formats as large as 512 /times/ 512 pixels; others have been radiation hardened to total dose levels beyond 1 Mrad. Data generation rates of 380 megasamples/second have been achieved. Analog and digital signal transmission and processing techniques have also been developed to accept and reduce these high data rates. 9 refs., 15 figs., 2 tabs

Laser diode technology and applications

International Nuclear Information System (INIS)

Figueroa, L.

1989-01-01

This book covers a wide range of semiconductor laser technology, from new laser structures and laser design to applications in communications, remote sensing, and optoelectronics. The authors report on new laser diode physics and applications and present a survey of the state of the art as well as progress in new developments

11.72-sq cm Active-Area Wafer Interconnected PiN Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 MA(sup 2)-s

Science.gov (United States)

2012-01-30

calculated action exceeded 1.7 MA2 -s. Preliminary efforts on high voltage diode interconnection have produced quarter wafer interconnected PiN...was packaged in a “hockey-puck” configuration and pulsed to 64 kA, dissipating 382 J with a calculated action exceeding 1.7 MA2 -s. II. FULL...epitaxial layers are utilized. 11.72-cm2 Active-area Wafer Interconnected PiN Diode pulsed at 64 kA dissipates 382 J and exhibits an action of 1.7 MA2 -s

Precision Spectroscopy, Diode Lasers, and Optical Frequency Measurement Technology

Science.gov (United States)

Hollberg, Leo (Editor); Fox, Richard (Editor); Waltman, Steve (Editor); Robinson, Hugh

1998-01-01

This compilation is a selected set of reprints from the Optical Frequency Measurement Group of the Time and Frequency Division of the National Institute of Standards and Technology, and consists of work published between 1987 and 1997. The two main programs represented here are (1) development of tunable diode-laser technology for scientific applications and precision measurements, and (2) research toward the goal of realizing optical-frequency measurements and synthesis. The papers are organized chronologically in five, somewhat arbitrarily chosen categories: Diode Laser Technology, Tunable Laser Systems, Laser Spectroscopy, Optical Synthesis and Extended Wavelength Coverage, and Multi-Photon Interactions and Optical Coherences.

Dual-polarization wavelength conversion of 16-QAM signals in a single silicon waveguide with a lateral p-i-n diode [Invited

DEFF Research Database (Denmark)

Da Ros, Francesco; Gajda, Andrzej; Liebig, Erik

2018-01-01

with an optical signal-to-noise ratio penalty below 0.7 dB. High-quality converted signals are generated thanks to the low polarization dependence (≤0.5 dB) and the high conversion efficiency (CE) achievable. The strong Kerr nonlinearity in silicon and the decrease of detrimental free-carrier absorption due......A polarization-diversity loop with a silicon waveguide with a lateral p-i-n diode as a nonlinear medium is used to realize polarization insensitive four-wave mixing. Wavelength conversion of seven dual-polarization 16-quadrature amplitude modulation (QAM) signals at 16 GBd is demonstrated...

Analytic formalism for current crowding in light emitting diodes

International Nuclear Information System (INIS)

Lee, Kyu-Seok

2012-01-01

This paper presents an analytic approach to simulating current crowding (CC) in light-emitting diodes with parallel p- and n-contacts. The electrical potential difference across the p-i-n layers is derived from the Laplace equation, whereas the current density through the p-i-n layers is obtained from the current density - voltage relation of a single-diode model. Since these two properties influence each other, they are calculated iteratively. It is found that CC depends on the applied voltage (or the average current density), the sheet resistances of the p- and the n-contact layers, the width of the active region, and the specific series resistance and ideality factor of the p-i-n layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

Energy Technology Data Exchange (ETDEWEB)

Portier, Benjamin; Pardo, Fabrice; Péré-Laperne, Nicolas; Steveler, Emilie; Dupuis, Christophe; Bardou, Nathalie; Lemaître, Aristide; Pelouard, Jean-Luc, E-mail: jean-luc.pelouard@lpn.cnrs.fr [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis (France); Vest, Benjamin; Jaeck, Julien; Rosencher, Emmanuel [ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France); Haïdar, Riad [ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France); École Polytechnique, Département de Physique, F-91128 Palaiseau (France)

2014-07-07

Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).

Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

International Nuclear Information System (INIS)

Portier, Benjamin; Pardo, Fabrice; Péré-Laperne, Nicolas; Steveler, Emilie; Dupuis, Christophe; Bardou, Nathalie; Lemaître, Aristide; Pelouard, Jean-Luc; Vest, Benjamin; Jaeck, Julien; Rosencher, Emmanuel; Haïdar, Riad

2014-01-01

Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).

Ampfion-hybrid diode on the Cornell LION accelerator

International Nuclear Information System (INIS)

Rondeau, G.D.; Greenly, J.B.; Hammer, D.A.

1984-01-01

An ampfion hybrid diode, previously run on the HYDRAMITE accelerator at Sandia National Laboratories has recently been installed on the Cornell LION accelerator (1 TW, 1.8 MV, 40 ns pulse). The ampfion hybrid diode is magnetically insulated by means of a field coil in series with the cathode structure of the diode. An epoxy dielectric flashboard on the anode provides an anode plasma to supply the extracted ions. The diode has a geometric focal length of 20 cm. The experiment is equipped with plasma erosion opening switches on the anode stock to eliminate prepulse and improve the generator voltage risetime. Diagnostics include magnetic pickup loops to measure currents in the diode structure and non-neutral beam currents, biased charge collectors, and damage targets. An alpha particle pin hole camera utilizing the p,α reaction of fast (>500 kV) protons on boron or lithium is being developed to measure focus quality and proton current. Plastic track detector will be used to image the alpha particles coming from a boron or lithium target. A second pin hole camera uses a plastic scintillator and light detector to give time resolved focused ion intensity

Spin-photon entangling diode

DEFF Research Database (Denmark)

Flindt, Christian; Sørensen, A. S.; Lukin, M. D.

2007-01-01

We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

International Nuclear Information System (INIS)

Feng-Ping, Chen; Yu-Ming, Zhang; Hong-Liang, Lü; Yi-Men, Zhang; Jian-Hua, Huang

2010-01-01

This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Performance of a high-resolution CsI(Tl)-PIN readout detector

International Nuclear Information System (INIS)

Kudenko, Yu.G.; Imazato, J.

1992-10-01

A study of a large-volume CsI(Tl) detector with a PIN diode readout was carried out. Our results show a light output of ≤20000 photoelectrons/MeV, an equivalent noise charge (rms) of about 900 electrons, and an equivalent noise level of ≤ 60 keV. We obtained an energy resolution of 11.2% (fwhm) for 1275 keV gamma rays from a 22 Na source. The characteristics of the PIN - preamplifier system as well as the parameters of a small CsI(Tl) - PIN detector with a direct and wavelength shifter readout are also reported. (author)

Application of PIN diode to soft x-ray measurement in TRIAM-1M

International Nuclear Information System (INIS)

Ohinata, Hirohiko; Kawasaki, Shoji; Kamitaki, Eriko; Moriyama, Shin-ichi; Nagao, Akihiro; Nakamura, Kazuo; Nakamura, Yukio; Hiraki, Naoji; Itoh, Satoshi.

1989-01-01

The soft X-ray in TRIAM-1M is measured with a PIN diode array in an effort to examine the internal MHD structures in tokamak plasma in TRIAM-1M. A magnetic probe is also used to make measurements. Based on these measurements, the region where sawtooth oscilations appears is identified in the Hugill diagram. The safety factor at the plasma surface at the time of the appearance of sawtooth oscillations is found to be larger than that at the time of its disappearance, indicating that the current density distribution becomes steeper with time. The time changes in the distribution of electron density and q-value are roughly calculated from those in the safety factor and inversion radius of sawtooth oscillations to confirm the above results. In low-q discharges, current disruption occurs either through the growth of the m=2/n=1 mode or through the interaction between the m=2/n=1 mode and m=3/n=2 mode. Current disruption in high-density discharges seems to occur through the growth of the m=2/n=1 mode. The rate of growth of sinusoidal oscillations is found to be only slightly dependent on the density. (N.K.)

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Directory of Open Access Journals (Sweden)

Sandro Rao

2016-01-01

Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

Application of semiconductor MOSFET and pin diode dosimeters to epithermal neutron beam dose distribution measurements in phantoms

International Nuclear Information System (INIS)

Carolan, M.G.; Wallace, S.A.; Allen, B.J.; Rosenfeld, A.B.; Mathur, J.N.

1996-01-01

For any clinical application of Boron Neutron Capture Therapy (BNCT) fast and accurate dose calculations will be required for treatment planning. Such calculations are also necessary for the planning and interpretation of results from pre-clinical and clinical trials where the speed of calculation is not so critical. A dose calculation system based on the MCNP Monte Carlo Neutron transport code has been developed by Wallace. This system takes image data from CT scans and constructs a voxel based geometrical model for input into MCNP. To validate the calculations, a number of phantoms were constructed and exposed in the HB11 epithermal neutron beam at the HFR of the CEC Joint Research Centre in Petten. The doses recorded by arrays of PIN diode neutron dosimeters and MOSFET gamma dosimeters in these phantoms were compared with the calculated results from the MCNP dose planning system. Initial results have been reported elsewhere. Poster 197. (author)

Fabrication study of GaAs mesa diodes for X-ray detection

OpenAIRE

Ng, J.S.; Meng, X.; Lees, J.E.; Barnett, A.; Tan, C.H.

2014-01-01

A study of leakage currents using GaAs mesa p-i-n diodes for X-ray photon counting is presented. Different wet chemical etching solution and etch depth were used in the fabrication of these mesa diodes. Low and uniform leakage currents were achieved when the diode fabrication used (i) a combination of main etching solution and finishing etching solution for the etching, and (ii) partially etched mesas. The diodes fabricated using these methods showed well-defined X-ray peaks when illuminated ...

Measurement of parameters for the quality control of X-ray units by using PIN diodes and a personal computer

International Nuclear Information System (INIS)

Ramirez, F.; Gaytan, E.; Mercado, I.; Estrada, M.; Cerdeira, A.

2000-01-01

The design of a new system for the measurement of the main parameters of X-ray units used in medicine is presented. The system measures automatically the exposure time, high voltage applied, waveform of the detected signal, exposure ratio and the total exposure (dose). The X-ray detectors employed are PIN diodes developed at CINVESTAV, the measurements are done in one single shot, without invasion of the X-ray unit. The results are shown in the screen of the computer and can be saved in a file for later analysis. The proposed system is intended to be used in the quality control of X-rays units for clinical radio-diagnosis. It is a simple and inexpensive equipment if compared with available commercial equipment that uses ionization chambers and accurate electrometers that small facilities and hospitals cannot afford

Development of a PIN diode based on-line measurement system for Radon (222Rn) and Thoron (220Rn) in environment

International Nuclear Information System (INIS)

Ashokkumar, P.; Chaudhury, Probal; Sumesh, C.G.; Sahoo, B.K.; Gaware, J.J.; Mayya, Y.S.

2014-01-01

Radon, thoron and their progenies are universally present in outdoor air, and can reach higher levels in indoor air due to poor ventilation. Several instruments have been developed for accurate measurement of radon and thoron in the environment. Semiconductor detector based system employing spectroscopic method has been proved to be the best among them. A PIN diode based electrostatic collection type online real-time instrument has been developed in Bhabha Atomic Research Centre for simultaneous measurement of radon and thoron in an environment while both 222 Rn and 220 Rn are present. This system can be used for determination of radon and thoron concentrations at residence or workplace. Furthermore, since the 222 Rn and 220 Rn are differentiated from each other through spectroscopy, this monitor can be used even in a mixed radon/thoron environment

Establishment of technological basis for fabrication of U-Pu-Zr ternary alloy fuel pins for irradiation tests in Japan

International Nuclear Information System (INIS)

Kikuchi, Hironobu; Iwai, Takashi; Nakajima, Kunihisa; Arai, Yasuo; Nakamura, Kinya; Ogata, Takanari

2011-01-01

A high-purity Ar gas atmosphere glove box accommodating injection casting and sodium-bonding apparatuses was newly installed in the Plutonium Fuel Research Facility of Oarai Research and Development Center, Japan Atomic Energy Agency, in which several nitride and carbide fuel pins were fabricated for irradiation tests. The experiences led to the establishment of the technological basis of the fabrication of U-Pu-Zr alloy fuel pins for the first time in Japan. After the injection casting of the U-Pu-Zr alloy, the metallic fuel pins were fabricated by welding upper and lower end plugs with cladding tubes of ferritic-martensitic steel. Subsequent to the sodium bonding for filling the annular gap region between the U-Pu-Zr alloy and the cladding tube with the melted sodium, the fuel pins for irradiation tests are inspected. This paper shows the apparatuses and the technological basis for the fabrication of U-Pu-Zr alloy fuel pins for the irradiation test planned at the experimental fast test reactor Joyo. (author)

PINS Spectrum Identification Guide

Energy Technology Data Exchange (ETDEWEB)

A.J. Caffrey

2012-03-01

The Portable Isotopic Neutron Spectroscopy—PINS, for short—system identifies the chemicals inside munitions and containers without opening them, a decided safety advantage if the fill chemical is a hazardous substance like a chemical warfare agent or an explosive. The PINS Spectrum Identification Guide is intended as a reference for technical professionals responsible for the interpretation of PINS gamma-ray spectra. The guide is divided into two parts. The three chapters that constitute Part I cover the science and technology of PINS. Neutron activation analysis is the focus of Chapter 1. Chapter 2 explores PINS hardware, software, and related operational issues. Gamma-ray spectral analysis basics are introduced in Chapter 3. The six chapters of Part II cover the identification of PINS spectra in detail. Like the PINS decision tree logic, these chapters are organized by chemical element: phosphorus-based chemicals, chlorine-based chemicals, etc. These descriptions of hazardous, toxic, and/or explosive chemicals conclude with a chapter on the identification of the inert chemicals, e.g. sand, used to fill practice munitions.

Nanosecond pulse-width electron diode based on dielectric wall accelerator technology

Energy Technology Data Exchange (ETDEWEB)

Zhao, Quantang, E-mail: zhaoquantang@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Z.M.; Yuan, P.; Cao, S.C.; Shen, X.K.; Jing, Y. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Yu, C.S. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Li, Z.P.; Liu, M.; Xiao, R.Q. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zong, Y.; Wang, Y.R. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhao, H.W. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

2013-11-21

An electron diode using a short section of dielectric wall accelerator (DWA) has been under development at the Institute of Modern Physics (IMP), Chinese Academy of Sciences. Tests have been carried out with spark gap switches triggered by lasers. The stack voltage efficiency of a four-layer of Blumleins reached about 60–70% with gas filled spark gap switching. The generated pulse voltage of peak amplitude of 23 kV and pulse width of 5 ns is used to extract and accelerate an electron beam of 320 mA, measured by a fast current transformer. A nanosecond pulse width electron diode was achieved successfully. Furthermore, the principle of a DWA is well proven and the development details and discussions are presented in this article. -- Highlights: •The key technology of DWA, including switches and pulse forming lines were studied. •The SiC PCSS obtained from Shanghai Institute were tested. •Two layers ZIP lines (new structure) and four layers Blumlein lines were studied with laser triggered spark gap switches. •A nanosecond pulse-width electron diode based on DWA technologies is achieved and studied experimentally. •The principle of DWA is also proved by the diode.

Performance Analysis of OCDMA Based on AND Detection in FTTH Access Network Using PIN & APD Photodiodes

Science.gov (United States)

Aldouri, Muthana; Aljunid, S. A.; Ahmad, R. Badlishah; Fadhil, Hilal A.

2011-06-01

In order to comprise between PIN photo detector and avalanche photodiodes in a system used double weight (DW) code to be a performance of the optical spectrum CDMA in FTTH network with point-to-multi-point (P2MP) application. The performance of PIN against APD is compared through simulation by using opt system software version 7. In this paper we used two networks designed as follows one used PIN photo detector and the second using APD photo diode, both two system using with and without erbium doped fiber amplifier (EDFA). It is found that APD photo diode in this system is better than PIN photo detector for all simulation results. The conversion used a Mach-Zehnder interferometer (MZI) wavelength converter. Also we are study, the proposing a detection scheme known as AND subtraction detection technique implemented with fiber Bragg Grating (FBG) act as encoder and decoder. This FBG is used to encode and decode the spectral amplitude coding namely double weight (DW) code in Optical Code Division Multiple Access (OCDMA). The performances are characterized through bit error rate (BER) and bit rate (BR) also the received power at various bit rate.

Sensitive pre-amplifier to load for Pin diodes

International Nuclear Information System (INIS)

Jacobo V, R. Y.; Hernandez D, V.; Ramirez J, F. J.

2013-10-01

The electronic instrumentation is indispensable for the measurement and characterization of the radiation. By means of this essential characteristics of the radiation are determined, as activity and their energy components. The nuclear instrumentation is based on the technical characteristics of the radiation detectors and the electronic devices associates (amplifiers, ana logical and digital converters, multichannel analyzers, etc.) The radiation detectors are very important instruments in fields as the nuclear physics, medicine, radiological protection, industry and in other fields, since they are the only method to capture the radiation and to be able to quantify it in precise form. To detect radiation diverse detector types are used, as the semiconductor type, inside them are the photodiodes type Pin. In this work the results that were obtained of the design, simulation, construction and tests of a preamplifier that was designed starting from a photodiode type Pin are presented. The system was designed and simulated with a program for electronic circuits, in this were carried out many tests being obtained a compact design and achieving the best necessary characteristics for its optimization. With the results of the simulation phase the electronics phase was built, which was couples to a spectroscopic amplifier and a multichannel analyzer. The total of the system was evaluated analyzing its performance before a triple source of alphas. Of the tests phase we find that the system allows obtaining, in a multichannel analyzer, the pulses height spectrum, with a good resolution and with this was calibrated the multichannel analyzer

Fuel pin transient behavior technology applied to safety analyses. Presentation to AEC Regulatory Staff 4th Regulatory Briefing on safety technology, Washington, D.C., November 19--20, 1974

International Nuclear Information System (INIS)

1974-11-01

Information is presented concerning LMFBR fuel pin performance requirements and evaluation; fuels behavior codes with safety interfaces; performance evaluations; ex-reactor materials and simulation tests; models for fuel pin failure; and summary of continuing fuels technology tasks. (DCC)

Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields

Czech Academy of Sciences Publication Activity Database

Wauters, F.; Kraeva, I.S.; Tandecki, M.; Traykov, E.; Van Gorp, S.; Zákoucký, Dalibor; Severijns, N.

2009-01-01

Roč. 604, č. 3 (2009), s. 563-567 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10480505 Keywords : PIN-diode * beta-particle detection * Magnetic field Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.317, year: 2009

Very high resolution detection of gamma radiation at room-temperature using P-I-N detectors of CdZnTe and HgCdTe

Science.gov (United States)

Hamilton, W. J.; Rhiger, D. R.; Sen, S.; Kalisher, M. H.; James, K.; Reid, C. P.; Gerrish, V.; Baccash, C. O.

1994-08-01

High-energy photon detectors have been constructed by engineering and fabricating p-i-n diode structures consisting of bulk CdZnTe and epitaxial HgCdTe. The p-i-n structure was obtained by liquid-phase epitaxial growth of p and n doped HgCdTe layers on 'intrinsic' CdZnTe material about 1mm thick and approximately 25mm square. Curve tracing shows I-V curves with diode characteristics having resistivity above 1011 Omega -cm and leakage current of less than 400 pA to about - 60V reverse bias on a typical test piece approximately 5 x 8 x 1 mm. Spectra of similar test pieces have been obtained at room temperature with various nuclear isotopic sources over the range of 22 keV to 662 keV which show exceptionally high energy resolution. Resolution as good as 1.82% FWHM was obtained for the 356 keV line of 133Ba with a P/V = 3.4. The performance of these detectors combined with contemporary infrared technology capable of fabricating 2D arrays of these II-VI materials opens up manifold exciting applications in astrophysics, medical, industrial, environmental, and defense spectroscopy and imaging.

Frequency Reconfigurable Circular Patch Antenna with an Arc-Shaped Slot Ground Controlled by PIN Diodes

Directory of Open Access Journals (Sweden)

Yao Chen

2017-01-01

Full Text Available In this paper, a compact frequency reconfigurable circular patch antenna with an arc-shaped slot loaded in the ground layer is proposed for multiband wireless communication applications. By controlling the ON/OFF states of the five PIN diodes mounted on the arc-shaped slot, the effective length of the arc-shaped slot and the effective length of antennas current are changed, and accordingly six-frequency band reconfiguration can be achieved. The simulated and measured results show that the antenna can operate from 1.82 GHz to 2.46 GHz, which is located in DCS1800 (1.71–1.88 GHz, UMTS (2.11–2.20 GHz, WiBro (2.3–2.4 GHz, and Bluetooth (2.4–2.48 GHz frequency bands and so forth. Compared to the common rectangular slot circular patch antenna, the proposed arc-shaped slot circular patch antenna not only has a better rotational symmetry with the circular patch and substrate but also has more compact size. For the given operating frequency at 1.82 GHz, over 55% area reduction is achieved in this design with respect to the common design with rectangular slot. Since the promising frequency reconfiguration, this antenna may have potential applications in modern multiband and multifunctional mobile communication systems.

Development of disassembly and pin chopping technology for FBR spent fuels

International Nuclear Information System (INIS)

Kobayashi, Tsuguyuki; Namba, Takashi; Kawabe, Yukinari; Washiya, Tadahiro

2008-01-01

Japan Atomic Power Company (JAPC) and Japan Atomic Energy Agency (JAEA) have been developing fuel disassembly and fuel pin chopping systems for a future Japanese commercial FBR. At first, the wrapper tube is cut by the slit-cut to pull it out, then the fuel pins are cut by the crop-cut at their end-plugs to separate them from the entrance nozzle. The pins are transferred to the magazine of the chopping machine. A series of tests were performed to develop this procedure. As the result of mechanical cutting tests, the CBN wheel was selected. The slit-cut tests were carried out to evaluated the cutting performance of the wheel. The wrapper tube is normally slit-cut in the circumferential direction. One CBN wheel could cut more than 5 fuel assemblies in this direction. The slit-cut in the axial direction is prepared as provision when the tube is difficult to put out. More work is needed to cut 5mm thick PNC-FMS plate in this direction without damaging the pins beneath it. As the result of the crop-cut tests of end-plugs made of ODS steel, the CBN wheel could cut the 61 pin bundle by two strokes. More work is needed to cut the 217 pin bundle. Fuel pin handling tests were performed to transfer them from the disassembly machine to the chopping machine. The Saucer tray was selected to receive the disassembled pins. All the pins were transferred and loaded into a magazine of the chopping machine. Fuel pin loading tests were conducted to optimize the magazine configuration to make the chopping length within 1.0±0.5 cm. In order to decrease the disturbance during chopping, the width of the magazine was adjusted to be 12 cm and installation of a height adjuster is favourable to control the free space above the pins. (author)

Complete indium-free CW 200W passively cooled high power diode laser array using double-side cooling technology

Science.gov (United States)

Wang, Jingwei; Zhu, Pengfei; Liu, Hui; Liang, Xuejie; Wu, Dihai; Liu, Yalong; Yu, Dongshan; Zah, Chung-en; Liu, Xingsheng

2017-02-01

High power diode lasers have been widely used in many fields. To meet the requirements of high power and high reliability, passively cooled single bar CS-packaged diode lasers must be robust to withstand thermal fatigue and operate long lifetime. In this work, a novel complete indium-free double-side cooling technology has been applied to package passively cooled high power diode lasers. Thermal behavior of hard solder CS-package diode lasers with different packaging structures was simulated and analyzed. Based on these results, the device structure and packaging process of double-side cooled CS-packaged diode lasers were optimized. A series of CW 200W 940nm high power diode lasers were developed and fabricated using hard solder bonding technology. The performance of the CW 200W 940nm high power diode lasers, such as output power, spectrum, thermal resistance, near field, far field, smile, lifetime, etc., is characterized and analyzed.

Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi-level pinning at the molecule-metal interface.

Science.gov (United States)

Lenfant, S; Guerin, D; Tran Van, F; Chevrot, C; Palacin, S; Bourgoin, J P; Bouloussa, O; Rondelez, F; Vuillaume, D

2006-07-20

We report the synthesis and characterization of molecular rectifying diodes on silicon using sequential grafting of self-assembled monolayers of alkyl chains bearing a pi group at their outer end (Si/sigma-pi/metal junctions). We investigate the structure-performance relationships of these molecular devices, and we examine the extent to which the nature of the pi end group (change in the energy position of their molecular orbitals) drives the properties of these molecular diodes. Self-assembled monolayers of alkyl chains (different chain lengths from 6 to 15 methylene groups) functionalized by phenyl, anthracene, pyrene, ethylene dioxythiophene, ethylene dioxyphenyl, thiophene, terthiophene, and quaterthiophene were synthesized and characterized by contact angle measurements, ellipsometry, Fourier transform infrared spectroscopy, and atomic force microscopy. We demonstrate that reasonably well-packed monolayers are obtained in all cases. Their electrical properties were assessed by dc current-voltage characteristics and high-frequency (1-MHz) capacitance measurements. For all of the pi groups investigated here, we observed rectification behavior. These results extend our preliminary work using phenyl and thiophene groups (Lenfant et al., Nano Lett. 2003, 3, 741). The experimental current-voltage curves were analyzed with a simple analytical model, from which we extracted the energy position of the molecular orbital of the pi group in resonance with the Fermi energy of the electrodes. We report experimental studies of the band lineup in these silicon/alkyl pi-conjugated molecule/metal junctions. We conclude that Fermi-level pinning at the pi group/metal interface is mainly responsible for the observed absence of a dependence of the rectification effect on the nature of the pi groups, even though the groups examined were selected to have significant variations in their electronic molecular orbitals.

Silicon PIN diode based electron-gamma coincidence detector system for Noble Gases monitoring.

Science.gov (United States)

Khrustalev, K; Popov, V Yu; Popov, Yu S

2017-08-01

We present a new second generation SiPIN based electron-photon coincidence detector system developed by Lares Ltd. for use in the Noble Gas measurement systems of the International Monitoring System and the On-site Inspection verification regimes of the Comprehensive Nuclear-Test Ban Treaty (CTBT). The SiPIN provide superior energy resolution for electrons. Our work describes the improvements made in the second generation detector cells and the potential use of such detector systems for other applications such as In-Situ Kr-85 measurements for non-proliferation purposes. Copyright © 2017 Elsevier Ltd. All rights reserved.

Study of the Radiation-Hardness of VCSEL and PIN

CERN Document Server

Gan, K K; Fernando, W; Kagan, H P; Kass, R D; Lebbai, M R M; Merritt, H; Moore, J R; Nagarkar, A; Rizatdinova, F; Skubic, P L; Smith, D S; Strang, M

2009-01-01

The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We study the radiation-hardness of VCSELs (Vertical-Cavity Surface-Emitting Laser) and GaAs and silicon PINs using 24 GeV/c protons at CERN for possible application in the data transmission upgrade. The optical power of VCSEL arrays decreases significantly after the irradiation but can be partially annealed with high drive currents. The responsivities of the PIN diodes also decrease significantly after irradiation, but can be recovered by operating at higher bias voltage. This provides a simple mechanism to recover from the radiation damage.

Laser diode technology for coherent communications

Science.gov (United States)

Channin, D. J.; Palfrey, S. L.; Toda, M.

1989-01-01

The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.

Pinning, de-pinning and re-pinning of a slowly varying rivulet

KAUST Repository

Paterson, C.; Wilson, S.K.; Duffy, B.R.

2013-01-01

The solutions for the unidirectional flow of a thin rivulet with prescribed volume flux down an inclined planar substrate are used to describe the locally unidirectional flow of a rivulet with constant width (i.e. pinned contact lines) but slowly varying contact angle as well as the possible pinning and subsequent de-pinning of a rivulet with constant contact angle and the possible de-pinning and subsequent re-pinning of a rivulet with constant width as they flow in the azimuthal direction from the top to the bottom of a large horizontal cylinder. Despite being the same locally, the global behaviour of a rivulet with constant width can be very different from that of a rivulet with constant contact angle. In particular, while a rivulet with constant non-zero contact angle can always run from the top to the bottom of the cylinder, the behaviour of a rivulet with constant width depends on the value of the width. Specifically, while a narrow rivulet can run all the way from the top to the bottom of the cylinder, a wide rivulet can run from the top of the cylinder only to a critical azimuthal angle. The scenario in which the hitherto pinned contact lines of the rivulet de-pin at the critical azimuthal angle and the rivulet runs from the critical azimuthal angle to the bottom of the cylinder with zero contact angle but slowly varying width is discussed. The pinning and de-pinning of a rivulet with constant contact angle, and the corresponding situation involving the de-pinning and re-pinning of a rivulet with constant width at a non-zero contact angle which generalises the de-pinning at zero contact angle discussed earlier, are described. In the latter situation, the mass of fluid on the cylinder is found to be a monotonically increasing function of the constant width. © 2013 Elsevier Masson SAS. All rights reserved.

Pinning, de-pinning and re-pinning of a slowly varying rivulet

KAUST Repository

Paterson, C.

2013-09-01

The solutions for the unidirectional flow of a thin rivulet with prescribed volume flux down an inclined planar substrate are used to describe the locally unidirectional flow of a rivulet with constant width (i.e. pinned contact lines) but slowly varying contact angle as well as the possible pinning and subsequent de-pinning of a rivulet with constant contact angle and the possible de-pinning and subsequent re-pinning of a rivulet with constant width as they flow in the azimuthal direction from the top to the bottom of a large horizontal cylinder. Despite being the same locally, the global behaviour of a rivulet with constant width can be very different from that of a rivulet with constant contact angle. In particular, while a rivulet with constant non-zero contact angle can always run from the top to the bottom of the cylinder, the behaviour of a rivulet with constant width depends on the value of the width. Specifically, while a narrow rivulet can run all the way from the top to the bottom of the cylinder, a wide rivulet can run from the top of the cylinder only to a critical azimuthal angle. The scenario in which the hitherto pinned contact lines of the rivulet de-pin at the critical azimuthal angle and the rivulet runs from the critical azimuthal angle to the bottom of the cylinder with zero contact angle but slowly varying width is discussed. The pinning and de-pinning of a rivulet with constant contact angle, and the corresponding situation involving the de-pinning and re-pinning of a rivulet with constant width at a non-zero contact angle which generalises the de-pinning at zero contact angle discussed earlier, are described. In the latter situation, the mass of fluid on the cylinder is found to be a monotonically increasing function of the constant width. © 2013 Elsevier Masson SAS. All rights reserved.

Post irradiation examination on test fuel pins for PWR

International Nuclear Information System (INIS)

Fogaca Filho, N.; Ambrozio Filho, F.

1981-01-01

Certain aspects of irradiation technology on test fuel pins for PWR, are studied. The results of post irradiation tests, performed on test fuel pins in hot cells, are presented. The results of the tests permit an evaluation of the effects of irradiation on the fuel and cladding of the pin. (Author) [pt

Panoramic irradiator dose mapping with pin photodiodes

International Nuclear Information System (INIS)

Ferreira, Danilo Cardenuto; Napolitano, Celia Marina; Bueno, Carmen Cecilia

2011-01-01

In this work we study the possibility of using commercial silicon PIN photodiodes (Siemens, SFH 00206) for dose mapping in the Panoramic Irradiator facility at IPEN-CNEN/SP. The chosen photodiode, that is encased in 1.2 mm thickness polymer layer, displays promising dosimetric characteristics such as small size (sensitive area of 7.00 mm 2 ), high sensitivity and low dark current (≅ 300 pA, at 0 V) together with low-cost and wide availability. The Panoramic facility is an irradiator Type II with absorbed dose certificated by International Dose Assurance Service (IDAS) offered by the International Agency Energy Atomic (IAEA). The charge registered by the diode as a function of the absorbed dose was in excellent agreement with that one calibrated by IDAS. Besides this, the easy handling and fast response of the SFH00206 diode compared to Fricke chemical dosimeters encouraged us to perform dose mapping around the source. (author)

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

Science.gov (United States)

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

2006-05-18

Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

Medical Applications of Space Light-Emitting Diode Technology--Space Station and Beyond

Energy Technology Data Exchange (ETDEWEB)

Whelan, H.T.; Houle, J.M.; Donohoe, D.L.; Bajic, D.M.; Schmidt, M.H.; Reichert, K.W.; Weyenberg, G.T.; Larson, D.L.; Meyer, G.A.; Caviness, J.A.

1999-06-01

Space light-emitting diode (LED) technology has provided medicine with a new tool capable of delivering light deep into tissues of the body, at wavelengths which are biologically optimal for cancer treatment and wound healing. This LED technology has already flown on Space Shuttle missions, and shows promise for wound healing applications of benefit to Space Station astronauts.

Continuous Holdup Measurements with Silicon P-I-N Photodiodes

International Nuclear Information System (INIS)

Bell, Z.W.; Oberer, R.B.; Williams, J.A.; Smith, D.E.; Paulus, M.J.

2002-01-01

We report on the behavior of silicon P-I-N photodiodes used to perform holdup measurements on plumbing. These detectors differ from traditional scintillation detectors in that no high-voltage is required, no scintillator is used (gamma and X rays are converted directly by the diode), and they are considerably more compact. Although the small size of the diodes means they are not nearly as efficient as scintillation detectors, the diodes' size does mean that a detector module, including one or more diodes, pulse shaping electronics, analog-to-digital converter, embedded microprocessor, and digital interface can be realized in a package (excluding shielding) the size of a pocket calculator. This small size, coupled with only low-voltage power requirement, completely solid-state realization, and internal control functions allows these detectors to be strategically deployed on a permanent basis, thereby reducing or eliminating the need for manual holdup measurements. In this paper, we report on the measurement of gamma and X rays from 235 U and 238 U contained in steel pipe. We describe the features of the spectra, the electronics of the device and show how a network of them may be used to improve estimates of inventory in holdup

Sensitive pre-amplifier to load for Pin diodes; Pre-amplificador sensible a carga para diodos PIN

Energy Technology Data Exchange (ETDEWEB)

Jacobo V, R. Y.; Hernandez D, V. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98060 Zacatecas (Mexico); Ramirez J, F. J., E-mail: yoshimarv@gmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2013-10-15

The electronic instrumentation is indispensable for the measurement and characterization of the radiation. By means of this essential characteristics of the radiation are determined, as activity and their energy components. The nuclear instrumentation is based on the technical characteristics of the radiation detectors and the electronic devices associates (amplifiers, ana logical and digital converters, multichannel analyzers, etc.) The radiation detectors are very important instruments in fields as the nuclear physics, medicine, radiological protection, industry and in other fields, since they are the only method to capture the radiation and to be able to quantify it in precise form. To detect radiation diverse detector types are used, as the semiconductor type, inside them are the photodiodes type Pin. In this work the results that were obtained of the design, simulation, construction and tests of a preamplifier that was designed starting from a photodiode type Pin are presented. The system was designed and simulated with a program for electronic circuits, in this were carried out many tests being obtained a compact design and achieving the best necessary characteristics for its optimization. With the results of the simulation phase the electronics phase was built, which was couples to a spectroscopic amplifier and a multichannel analyzer. The total of the system was evaluated analyzing its performance before a triple source of alphas. Of the tests phase we find that the system allows obtaining, in a multichannel analyzer, the pulses height spectrum, with a good resolution and with this was calibrated the multichannel analyzer.

Results from a 64-pixel PIN-diode detector system for low-energy beta-electrons

Energy Technology Data Exchange (ETDEWEB)

Wuestling, Sascha, E-mail: sascha.wuestling@kit.ed [Forschungszentrum Karlsruhe, Institut fuer Prozessdatenverarbeitung und Elektronik, Postfach 3640, 76021 Karlsruhe (Germany); Fraenkle, F.; Habermehl, F.; Renschler, P. [Universitaet Karlsruhe - TH, Institut fuer Experimentelle Kernphysik, Postfach 6980, 76128 Karlsruhe (Germany); Steidl, M [Forschungszentrum Karlsruhe, Institut fuer Kernphysik, Postfach 3640, 76021 Karlsruhe (Germany)

2010-12-11

The KATRIN neutrino mass experiment is based on a precise energy measurement ({Delta}E/E=5x10{sup -5}) of electrons emerging from tritium beta decay (E{sub max}=18.6 keV). This is done by a large electrostatic retarding spectrometer (MAC-E Filter), which is followed by an electron detector. Key requirements for this detector are a large sensitive area ({approx}80 cm{sup 2}), a certain energy resolution ({Delta}E=600 eV - 18.6 keV) but also a certain spatial resolution ({approx}3 mm), which leads to a multi-pixel design. As a tentative design on the way to the final detector, but also for operational service on the so-called pre-spectrometer experiment, a detector system with a reduced size (16 cm{sup 2}) and a reduced pixel number (64), making use of a monolithic segmented silicon PIN diode, was designed and built. While the design and very first measurements have been presented in Wuestling et al. , this publication shows the operational performance of the detector system. The robust concept of the electronics allowed adaptation to mechanically different experimental setups. The spacial resolution of the detector system proved to be essential in examining Penning trap induced background and other effects in the pre-spectrometer experiment. The detector performance test runs include energy resolution and calibration, background rates, correlation between pixels (crosstalk), spatially resolved rate analysis, and a dead-layer measurement . The detector allows for background searches with a sensitivity as low as 1.3x10{sup -3} cps/cm{sup 2} in the energy range of 20 keV. This allows the pre-spectrometer to be characterized with e-gun illumination with a signal to background ratio of better than 10{sup 5} and the search for ultra low Penning discharge emissions.

Results from a 64-pixel PIN-diode detector system for low-energy beta-electrons

Science.gov (United States)

Wuestling, Sascha; Fraenkle, F.; Habermehl, F.; Renschler, P.; Steidl, M.

2010-12-01

The KATRIN neutrino mass experiment is based on a precise energy measurement (Δ E/ E=5×10 -5) of electrons emerging from tritium beta decay ( Emax=18.6 keV). This is done by a large electrostatic retarding spectrometer (MAC-E Filter), which is followed by an electron detector. Key requirements for this detector are a large sensitive area (˜80 cm 2), a certain energy resolution (Δ E=600 eV @ 18.6 keV) but also a certain spatial resolution (˜3 mm), which leads to a multi-pixel design. As a tentative design on the way to the final detector, but also for operational service on the so-called pre-spectrometer experiment, a detector system with a reduced size (16 cm 2) and a reduced pixel number (64), making use of a monolithic segmented silicon PIN diode, was designed and built. While the design and very first measurements have been presented in Wuestling et al. [6], this publication shows the operational performance of the detector system. The robust concept of the electronics allowed adaptation to mechanically different experimental setups. The spacial resolution of the detector system proved to be essential in examining Penning trap induced background and other effects in the pre-spectrometer experiment. The detector performance test runs include energy resolution and calibration, background rates, correlation between pixels (crosstalk), spatially resolved rate analysis, and a dead-layer measurement [7]. The detector allows for background searches with a sensitivity as low as 1.3×10 -3 cps/cm 2 in the energy range of 20 keV. This allows the pre-spectrometer to be characterized with e-gun illumination with a signal to background ratio of better than 10 5 and the search for ultra low Penning discharge emissions.

Transient current changes induced in pin-diodes by nanosecond electron pulses

International Nuclear Information System (INIS)

Leonhardt, J.W.; Goldner, R.; Bos, J.; Mehnert, R.

1984-01-01

The electron pulse technique can be applied as a diagnostic method to measure charge carrier lifetimes, diffusion length or junction width in semiconductor p + -i-n + diodes. The described effect of the pulse length dependence on the electron energy might be of importance as an energy monitor for pulsed electron accelerators. (author)

Improved pinning regime by energetic ions using reduction of pinning potential

Energy Technology Data Exchange (ETDEWEB)

Weinstein, Roy; Gandini, Alberto; Sawh, Ravi-Persad; Parks, Drew; Mayes, Bill

2003-05-15

When ion damage is used to create pinning centers, full columnar pinning centers provide the largest pinning potential, U{sub pin}, but not the greatest J{sub c} or pinned field, B{sub pin}. Some of the characteristics of columnar defects which limit J{sub c} and B{sub pin} are discussed, including reduction of percolation path, and the need for a larger number of columns of damage, for pinning, than are usually estimated. It is concluded that columnar pinning centers are limited to B{sub pin}<4 T, and also severely reduce J{sub c}. Evidence is reviewed that aligned damage, or broken-columnar pinning centers, described herein, can provide orders of magnitude higher J{sub c}, and higher pinned field, despite providing lower U{sub pin}. A pinning center morphology is discussed which utilizes multiple-in-line-damage (MILD). For, e.g., present day large grain HTS J{sub c}, obtainable by MILD pinning, is estimated to be of the order of 10{sup 6} A/cm{sup 2} at 77 K, even when crystal plane alignment and weak links are not improved. Pinned field is increased by over an order of magnitude. An experiment is proposed to confirm these observations, and to directly compare MILD to columnar pinning centers. It will also determine the optimum MILD structure. Other measurements of interest, made possible by the same data set, are described.

Nano-engineered pinning centres in YBCO superconducting films

Energy Technology Data Exchange (ETDEWEB)

Crisan, A., E-mail: adrian.crisan@infim.ro [National Institute for Materials Physics Bucharest, 105 bis Atomistilor Str., 077125 Magurele (Romania); School of Metallurgy and Materials, University of Birmingham, Edgbaston, B15 2TT Birmingham (United Kingdom); Dang, V.S. [School of Metallurgy and Materials, University of Birmingham, Edgbaston, B15 2TT Birmingham (United Kingdom); Nano and Energy Center, VNU Hanoi University of Science, 334 Nguyen Trai, Thanh Xuan, Hanoi (Viet Nam); Mikheenko, P. [School of Metallurgy and Materials, University of Birmingham, Edgbaston, B15 2TT Birmingham (United Kingdom); Department of Physics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway)

2017-02-15

Highlights: • Power applications of YBCO films/coated conductors in technological relevant magnetic fields requires nano-engineered pinning centre. • Three approaches have been proposed: substrate decoration, quasi-multilayers, and targets with secondary phase nano-inclusions. • Combination of all three approaches greatly increased critical current in YBCO films. • Bulk pinning force, pinning potential, and critical current density are estimated and discussed in relation with the type and strength of pinning centres related to the defects evidenced by Transmission Electron Microscopy. - Abstract: For practical applications of superconducting materials in applied magnetic fields, artificial pinning centres in addition to natural ones are required to oppose the Lorentz force. These pinning centres are actually various types of defects in the superconductor matrix. The pinning centres can be categorised on their dimension (volume, surface or point) and on their character (normal cores or Δκ cores). Different samples have been produced by Pulsed Laser Deposition, with various thicknesses, temperatures and nanostructured additions to the superconducting matrix. They have been characterized by SQUID Magnetic Properties Measurement System and Physical Properties Measurement System, as well as by Transmission Electron Microscopy (TEM). Correlations between pinning architecture, TEM images, and critical currents at various fields and field orientations will be shown for a large number of YBa{sub 2}Cu{sub 3}O{sub x} films with various types and architectures of artificial pinning centres.

Compact CsI(Tl)-PIN detectors for nuclear physics applications

International Nuclear Information System (INIS)

Bhattacharjee, T.; Basu, S.K.; Bhattacharyya, S.; Chanda, S.; Chowdhury, A.; Mukhopadhyay, P.; Chatterjee, M.B.; Dey, C.C.; Mukherjee, Anjali

2005-01-01

Prototype detector elements, based on CsI(Tl) - Si PIN diodes, have been fabricated and optimized for use in a near 4p charged particle multiplicity filter array. The important aspects of fabrication of such compact detector elements along with the off-line and on-line performance test results will be reported. An early implementation of the proposed multiplicity filter array will be described. The planned use of the array in conjunction with the Indian National Gamma Array (INGA) as a reaction filter in high spin spectroscopic studies would be stressed. (author)

Radiation effects on breakdown in silicon multiguarded diodes

International Nuclear Information System (INIS)

Bisello, D.; Da Rold, M.; Franzin, L.; Wheadon, R.

1996-01-01

The authors have investigated the current-voltage characteristics of silicon PIN diodes with a number of different multiguard structures. These structures were designed to increase the overall device breakdown voltage. The same measurements were carried out after gamma irradiation at different doses and neutron irradiation at fluences beyond type-inversion. This study is a first step towards defining guard structures optimized for operation in high-radiation environments such as those expected at the LHC

Steps towards a GaN nanowire based light emitting diode and its integration with Si-MOS technology

Energy Technology Data Exchange (ETDEWEB)

Limbach, Friederich

2012-06-22

This work is concerned with the realization and investigation of a light emitting diode (LED) structure within single GaN nanowires (NWs) and its integration with Si technology. To this end first a general understanding of the GaN NW growth is given. This is followed by investigations of the influence which doping species, such as Mg and Si, have on the growth of the NWs. The experience gathered in these studies set the basis for the synthesis of nominal p-i-n and n-i-p junctions in GaN NWs. Investigations of these structures resulted in the technologically important insight, that p-type doping with Mg is achieved best if it is done in the later NW growth stage. This implies that it is beneficial for a NW LED to place the p-type segment on the NW top. Another important component of an LED is the active zone where electron-hole recombination takes place. In the case of planar GaN LEDs, this is usually achieved by alloying Ga and In to form InGaN. In order to be able to control the growth under a variety of conditions, we investigate the growth of InGaN in the form of extended segments on top of GaN NWs, as well as multi quantum wells (MQWs) in GaN NWs. All the knowledge gained during these preliminary studies is harnessed to reach the overall goal: The realization of a GaN NW LED. Such structures are fabricated, investigated and processed into working LEDs. Finally, a report on the efforts of integrating III-nitride NW LEDs and Si based metaloxide-semiconductor field effect transistor (MOSFET) technology is given. This demonstrates the feasibility of the monolithic integration of both devices on the same wafer at the same time.

Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

Science.gov (United States)

Hayashi, Shohei; Yamashita, Tamotsu; Senzaki, Junji; Miyazato, Masaki; Ryo, Mina; Miyajima, Masaaki; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

2018-04-01

The origin of expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes was investigated by the stress-current test. At a stress-current density lower than 25 A cm-2, triangular stacking faults were formed from basal-plane dislocations in the epitaxial layer. At a stress-current density higher than 350 A cm-2, both triangular and long-zone-shaped stacking faults were formed from basal-plane dislocations that converted into threading edge dislocations near the interface between the epitaxial layer and the substrate. In addition, the conversion depth of basal-plane dislocations that expanded into the stacking fault was inside the substrate deeper than the interface. These results indicate that the conversion depth of basal-plane dislocations strongly affects the threshold stress-current density at which the expansion of stacking faults occurs.

Diode laser based light sources for biomedical applications

DEFF Research Database (Denmark)

Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin

2013-01-01

Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode...... imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications....

CdS-based p-i-n diodes using indium and copper doped CdS films by pulsed laser deposition

International Nuclear Information System (INIS)

Hernandez-Como, N; Berrellez-Reyes, F; Mizquez-Corona, R; Ramirez-Esquivel, O; Mejia, I; Quevedo-Lopez, M

2015-01-01

In this work we report a method to dope cadmium sulfide (CdS) thin films using pulsed laser deposition. Doping is achieved during film growth at substrate temperatures of 100 °C by sequential deposition of the CdS and the dopant material. Indium sulfide and copper disulfide targets were used as the dopant sources for n-type and p-type doping, respectively. Film resistivities as low as 0.2 and 1 Ω cm were achieved for indium and copper doped films, respectively. Hall effect measurements demonstrated the change in conductivity type from n-type to p-type when the copper dopants are incorporated into the film. The controlled incorporation of indium or copper, in the undoped CdS film, results in substitutional defects in the CdS, which increases the electron and hole concentration up to 4 × 10 18 cm −3 and 3 × 10 20 cm −3 , respectively. The results observed with CdS doping can be expanded to other chalcogenides material compounds by just selecting different targets. With the optimized doped films, CdS-based p-i-n diodes were fabricated yielding an ideality factor of 4, a saturation current density of 2 × 10 −6 A cm −2 and a rectification ratio of three orders of magnitude at ±3 V. (paper)

High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates

Science.gov (United States)

Zhu, Zhifu; Zhang, Heqiu; Liang, Hongwei; Tang, Bin; Peng, Xincun; Liu, Jianxun; Yang, Chao; Xia, Xiaochuan; Tao, Pengcheng; Shen, Rensheng; Zou, Jijun; Du, Guotong

2018-06-01

The temperature-dependent radiation-detection performance of an alpha-particle detector that was based on a gallium-nitride (GaN)-based pin structure was studied from 290 K to 450 K. Current-voltage-temperature measurements (I-V-T) of the reverse bias show the exponential dependence of leakage currents on the voltage and temperature. The current transport mechanism of the GaN-based pin diode from the reverse bias I-V fitting was analyzed. The temperature-dependent pulse-height spectra of the detectors were studied using an 241 Am alpha-particle source at a reverse bias of 10 V, and the peak positions shifted from 534 keV at 290 K to 490 keV at 450 K. The variation of full width at half maximum (FWHM) from 282 keV at 290 K to 292 keV at 450 K is almost negligible. The GaN-based pin detectors are highly promising for high-temperature environments up to 450 K.

Recombination centers and electrical characteristics in silicon power p-i-n diodes irradiated with high energy electrons

International Nuclear Information System (INIS)

Fuochi, P.G.; Martelli, A.; Passerini, B.; Zambelli, M.

1988-01-01

Recombination centers introduced by irradiation with 12 MeV electrons in large area silicon diodes with p-i-n structure are studied with the Deep Level Transient Spectroscopy technique (DLTS). The effects of these levels on the electrical characteristics of the devices are related to their position Esub(t) in the silicon forbidden gap, their concentration and their electron capture cross section. Changes of defect configuration during an annealing process at 360 0 C have been observed and a detailed analysis of the DLTS spectra has shown a complex defect pattern. Four major recombination centers have been identified: Esub(c) - Esub(t) = 0.17 eV, Esub(c) - Esub(t) = 0.19 eV, Esub(c) -Esub(t) 0.31 eV, Esub(c) - Esub(t) = 0.39 eV, where Esub(c) is the energy corresponding to the lower limit of the conduction band. The first energy level, known as A-center, is the dominant recombination level controlling the minority carrier lifetime after room temperature irradiation. As the annealing proceeds the center at Esub(c) - Esub(t) = 0.31 eV becomes the dominant one. The complex structure of the centers has been studied and demonstrated with the aid of proper modelling implemented on a set of numerical simulation tools. In this way it has been possible to analyze more accurately the defect kinetics during annealing. The study of the defect behaviour during the annealing process has resulted in an improved application of electron irradiation as a standard production technique in the manufacturing process of high power devices. (author)

Final report for EDI energy conservation with diode light; Slutrapport for EDI energibesparelser med diodelys

Energy Technology Data Exchange (ETDEWEB)

NONE

2006-07-01

The aim of this project has been to develop technological knowledge and a competence platform for utilization of new light emitting diode technology for general lighting purposes. Furthermore the project has aimed at developing a 3 W light diode bulb to replace 15-20 W filament bulbs and halogen spotlights, and thereby demonstrating a large energy conservation potential in the use of LED technology for lighting purposes. (BA)

Setting for technological control of vibropacked uranium-plutonium fuel pins

International Nuclear Information System (INIS)

Golushko, V.V.; Semenov, A.L.; Chukhlova, O.P.; Kuznetsov, A.M.; Korchkov, Yu.N.; Kandrashina, T.A.

1991-01-01

Scanning set-up providing for control of fuel pins by quality of fuel distribution in them is described. The gamma absorption method of fuel density measurement and the method of its own radiation registration are applied. Scintillation detection blocks are used in the measuring equipment mainly consisting of standard CAMAC blocks. Automation of measurements is performed on the basis of the computer complex MERA-60. A complex of programs for automation of the procedures under way is developed, when the facility operates within the test production line of vibroracked uranium-plutonium fuel pins. 6 refs.; 4 figs.; 1 tabs

Minimum ionizing particle detection using amorphous silicon diodes

Energy Technology Data Exchange (ETDEWEB)

Xi, J.; Hollingsworth, R.E.; Buitrago, R.H. (Glasstech Solar, Inc., Wheat Ridge, CO (USA)); Oakley, D.; Cumalat, J.P.; Nauenberg, U. (Colorado Univ., Boulder (USA). Dept. of Physics); McNeil, J.A. (Colorado School of Mines, Golden (USA). Dept. of Physics); Anderson, D.F. (Fermi National Accelerator Lab., Batavia, IL (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

1991-03-01

Hydrogenated amorphous silicon pin diodes have been used to detect minimum ionizing electrons with a pulse height signal-to-noise ratio exceeding 3. A distinct signal was seen for shaping times from 100 to 3000 ns. The devices used had a 54 {mu}m thick intrinsic layer and an active area of 0.1 cm{sup 2}. The maximum signal was 3200 electrons with a noise width of 950 electrons for a shaping time of 250 ns. (orig.).

Quaternary InGaAsSb Thermophotovoltaic Diode Technology

International Nuclear Information System (INIS)

M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

2005-01-01

Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency (η TPV ) and a power density (PD) of η TPV = 19% and PD=0.58 W/cm 2 were measured for T radiator = 950 C and T diode = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be η TPV = 26% and PD = 0.75 W/cm 2 . These limits are extended to η TPV = 30% and PD = 0.85W/cm 2 if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are ∼10

Electrical performance of GaN diode as betavoltaic isotope battery energy converter

International Nuclear Information System (INIS)

Wang Guanquan; Yang Yuqing; Liu Yebing; Hu Rui; Li Hao; Zhong Zhengkun; Luo Shunzhong

2013-01-01

Two kinds of GaN PiN diodes were prepared to be the energy converters of betavoltaic batteries, and irradiated by 63 Ni and 3 H radioactive sources. The I sc was 5.4 nA and V oc was 771 mV for 63 Ni source; the I sc was 10.8 nA and V oc was 839 mV for 3 H source. These results show that their V oc are far better than silicon diodes', but their I sc are poor. And there are some differences between the theory values and experiment results. There would be greatly improving space in electrical performance of beta voltaic isotope batteries with GaN diodes as the energy converters, if the dislocation could be reduced in GaN material producing process, the Ohmic contact could be prepared very well and the diodes configuration could be designed more optimizedly in the future. (authors)

Heterogeneous neutron-leakage model for PWR pin-by-pin calculation

International Nuclear Information System (INIS)

Li, Yunzhao; Zhang, Bin; Wu, Hongchun; Shen, Wei

2017-01-01

Highlights: •The derivation of the formula of the leakage model is introduced. This paper evaluates homogeneous and heterogeneous leakage models used in PWR pin-by-pin calculation. •The implements of homogeneous and heterogeneous leakage models used in pin-cell homogenization of the lattice calculation are studied. A consistent method of cooperation between the heterogeneous leakage model and the pin-cell homogenization theory is proposed. •Considering the computational cost, a new buckling search scheme is proposed to reach the convergence faster. The computational cost of the newly proposed neutron balance scheme is much less than the power-method scheme and the linear-interpolation scheme. -- Abstract: When assembly calculation is performed with the reflective boundary condition, a leakage model is usually required in the lattice code. The previous studies show that the homogeneous leakage model works effectively for the assembly homogenization. However, it becomes different and unsettled for the pin-cell homogenization. Thus, this paper evaluates homogeneous and heterogeneous leakage models used in pin-by-pin calculation. The implements of homogeneous and heterogeneous leakage models used in pin-cell homogenization of the lattice calculation are studied. A consistent method of cooperation between the heterogeneous leakage model and the pin-cell homogenization theory is proposed. Considering the computational cost, a new buckling search scheme is proposed to reach the convergence faster. For practical reactor-core applications, the diffusion coefficients determined by the transport cross-section or by the leakage model are compared with each other to determine which one is more accurate for the Pressurized Water Reactor pin-by-pin calculation. Numerical results have demonstrated that the heterogeneous leakage model together with the diffusion coefficient determined by the heterogeneous leakage model would have the higher accuracy. The new buckling search

Unicortical self-drilling external fixator pins reduce thermal effects during pin insertion.

Science.gov (United States)

Greinwald, Markus; Varady, Patrick A; Augat, Peter

2017-12-14

External fixation is associated with the risk of pin loosening and pin infection potentially associated to thermal bone necrosis during pin insertion. This study aims to investigate if the use of external fixator systems with unicortical pins reduces the heat production during pin insertion compared to fixators with bicortical pins. Porcine bone specimens were employed to determine bone temperatures during insertion of fixator pins. Two thermographic cameras were used for a simultaneous temperature measurement on the bone surface (top view) and a bone cross-section (front view). Self-drilling unicortical and bicortical pins were inserted at different rotational speeds: (30-600) rpm. Maximum and mean temperatures of the emerging bone debris, bone surface and bone cross-section were analyzed. Maximum temperatures of up to 77 ± 26 °C were measured during pin insertion in the emerging debris and up to 42 ± 2 °C on the bone surface. Temperatures of the emerging debris increased with increasing rotational speeds. Bicortical pin insertion generated significantly higher temperatures at low insertion speed (30 rpm) CONCLUSION: The insertion of external fixator pins can generate a considerable amount of heat around the pins, primarily emerging from bone debris and at higher insertion speeds. Our findings suggest that unicortical, self-drilling fixator pins have a decreased risk for thermal damage, both to the surrounding tissue and to the bone itself.

Reduction of halo pin site morbidity with a new pin care regimen.

Science.gov (United States)

Kazi, Hussain Anthony; de Matas, Marcus; Pillay, Robin

2013-06-01

A retrospective analysis of halo device associated morbidity over a 4-year period. To assess the impact of a new pin care regimen on halo pin site related morbidity. Halo orthosis treatment still has a role in cervical spine pathology, despite increasing possibilities of open surgical treatment. Published figures for pin site infection range from 12% to 22% with pin loosening from 7% to 50%. We assessed the outcome of a new pin care regimen on morbidity associated with halo spinal orthoses, using a retrospective cohort study from 2001 to 2004. In the last two years, our pin care regimen was changed. This involved pin site care using chlorhexidene & regular torque checking as part of a standard protocol. Previously, povidone iodine was used as skin preparation in theatre, followed by regular sterile saline cleansing when pin sites became encrusted with blood. There were 37 patients in the series, the median age was 49 (range, 22-83) and 20 patients were male. The overall infection rate prior to the new pin care protocol was 30% (n=6) and after the introduction, it dropped to 5.9% (n=1). This difference was statistically significant (p<0.05). Pin loosening occurred in one patient in the group prior to the formal pin care protocol (3%) and none thereafter. Reduced morbidity from halo use can be achieved with a modified pin cleansing and tightening regimen.

Luminescence and the light emitting diode the basics and technology of leds and the luminescence properties of the materials

CERN Document Server

Williams, E W; Pamplin, BR

2013-01-01

Luminescence and the Light Emitting Diode: The Basics and Technology of LEDS and the Luminescence Properties of the Materials focuses on the basic physics and technology of light emitting diodes (LEDS) and pn junction lasers as well as their luminescence properties. Optical processes in semiconductors and the useful devices which can be made are discussed. Comprised of 10 chapters, this book begins with an introduction to the crystal structure and growth, as well as the optical and electrical properties of LED materials. The detailed fabrication of the LED is then considered, along with the lu

Sodium Loop Safety Facility W-2 experiment fuel pin rupture detection system

International Nuclear Information System (INIS)

Hoffman, M.A.; Kirchner, T.L.; Meyers, S.C.

1980-05-01

The objective of the Sodium Loop Safety Facility (SLSF) W-2 experiment is to characterize the combined effects of a preconditioned full-length fuel column and slow transient overpower (TOP) conditions on breeder reactor (BR) fuel pin cladding failures. The W-2 experiment will meet this objective by providing data in two technological areas: (1) time and location of cladding failure, and (2) early post-failure test fuel behavior. The test involves a seven pin, prototypic full-length fast test reactor (FTR) fuel pin bundle which will be subjected to a simulated unprotected 5 cents/s reactivity transient overpower event. The outer six pins will provide the necessary prototypic thermal-hydraulic environment for the center pin

Serviceability of rod ceramic fuel pins on motoring conditions of FTP or NEMF reactor

International Nuclear Information System (INIS)

Deryavko, I.I.

2004-01-01

The operation conditions of rod ceramic fuel pins in the running hydrogen-cooled technological canals of FTP or NEMF reactor on the motoring conditions are considered. The available postreactor researches of the fuel pins are presented and the additional postreactor researches of fuel pins, tested on this mode in IVG.1 and IRGIT reactors, are carried out. The fuel pins serviceability on motoring conditions of FTP or NEF reactor operation is concluded. (author)

Retractable Pin Tools for the Friction Stir Welding Process

Science.gov (United States)

1998-01-01

Two companies have successfully commercialized a specialized welding tool developed at the Marshall Space Flight Center (MSFC). Friction stir welding uses the high rotational speed of a tool and the resulting frictional heat created from contact to crush, 'stir' together, and forge a bond between two metal alloys. It has had a major drawback, reliance on a single-piece pin tool. The pin is slowly plunged into the joint between two materials to be welded and rotated as high speed. At the end of the weld, the single-piece pin tool is retracted and leaves a 'keyhole,' something which is unacceptable when welding cylindrical objects such as drums, pipes and storage tanks. Another drawback is the requirement for different-length pin tools when welding materials of varying thickness. An engineer at the MSFC helped design an automatic retractable pin tool that uses a computer-controlled motor to automatically retract the pin into the shoulder of the tool at the end of the weld, preventing keyholes. This design allows the pin angle and length to be adjusted for changes in material thickness and results in a smooth hole closure at the end of the weld. Benefits of friction stir welding, using the MSFC retractable pin tool technology, include the following: The ability to weld a wide range of alloys, including previously unweldable and composite materials; provision of twice the fatigue resistance of fusion welds and no keyholes; minimization of material distortion; no creation of hazards such as welding fumes, radiation, high voltage, liquid metals, or arcing; automatic retraction of the pin at the end of the weld; and maintaining full penetration of the pin.

Close Proximity Robotic Maneuvering through Flux Pinning Manipulation

Data.gov (United States)

National Aeronautics and Space Administration — Non-contacting actuation technology like flux pinning has never been demonstrated in space. The development of a nonphysical joint is critical for maneuvers such as...

Pin Component Technology (V1.0) and Its C Interface

National Research Council Canada - National Science Library

Hissam, Scott; Ivers, James; Plakosh, Daniel; Wallnau, Kurt C

2005-01-01

.... Pin implements the container idiom for software components. Containers provide a pre-fabricated "shell" in which custom code executes and through which all interactions between custom code and its external environment are mediated...

Awake craniotomy using electromagnetic navigation technology without rigid pin fixation.

Science.gov (United States)

Morsy, Ahmed A; Ng, Wai Hoe

2015-11-01

We report our institutional experience using an electromagnetic navigation system, without rigid head fixation, for awake craniotomy patients. The StealthStation® S7 AxiEM™ navigation system (Medtronic, Inc.) was used for this technique. Detailed preoperative clinical and neuropsychological evaluations, patient education and contrast-enhanced MRI (thickness 1.5mm) were performed for each patient. The AxiEM Mobile Emitter was typically placed in a holder, which was mounted to the operating room table, and a non-invasive patient tracker was used as the patient reference device. A monitored conscious sedation technique was used in all awake craniotomy patients, and the AxiEM Navigation Pointer was used for navigation during the procedure. This offers the same accuracy as optical navigation, but without head pin fixation or interference with intraoperative neurophysiological techniques and surgical instruments. The application of the electromagnetic neuronavigation technology without rigid head fixation during an awake craniotomy is accurate, and offers superior patient comfort. It is recommended as an effective adjunctive technique for the conduct of awake surgery. Copyright © 2015 Elsevier Ltd. All rights reserved.

Multicenter Study of Pin Site Infections and Skin Complications Following Pinning of Pediatric Supracondylar Humerus Fractures.

Science.gov (United States)

Combs, Kristen; Frick, Steven; Kiebzak, Gary

2016-12-03

Pediatric supracondylar humerus fractures are the most common elbow fractures in pediatric patients. Surgical fixation using pins is the primary treatment for displaced fractures. Pin site infections may follow supracondylar humerus fracture fixation; the previously reported incidence rate in the literature is 2.34%, but there is significant variability in reported incidence rates of pin site infection. This study aims to define the incidence rate and determine pre-, peri-, and postoperative factors that may contribute to pin site infection following operative reduction, pinning, and casting. A retrospective chart analysis was performed over a one-year period on patients that developed pin site infection. A cast care form was added to Nemours' electronic medical records (EMR) system (Epic Systems Corp., Verona, WI) to identify pin site infections for retrospective review. The cast care form noted any inflamed or infected pins. Patients with inflamed or infected pin sites underwent a detailed chart review. Preoperative antibiotic use, number and size of pins used, method of postoperative immobilization, pin dressings, whether postoperative immobilization was changed prior to pin removal, and length of time pins were in place was recorded. A total of 369 patients underwent operative reduction, pinning, and casting. Three patients developed a pin site infection. The pin site infection incidence rate was 3/369=0.81%. Descriptive statistics were reported for the three patients that developed pin site infections and three patients that developed pin site complications. Pin site infection development is low. Factors that may contribute to the development of pin site infection include preoperative antibiotic use, length of time pins are left in, and changing the cast prior to pin removal.

Computer simulation of vortex pinning in type II superconductors. II. Random point pins

International Nuclear Information System (INIS)

Brandt, E.H.

1983-01-01

Pinning of vortices in a type II superconductor by randomly positioned identical point pins is simulated using the two-dimensional method described in a previous paper (Part I). The system is characterized by the vortex and pin numbers (N/sub v/, N/sub p/), the vortex and pin interaction ranges (R/sub v/, R/sub p/), and the amplitude of the pin potential A/sub p/. The computation is performed for many cases: dilute or dense, sharp or soft, attractive or repulsive, weak or strong pins, and ideal or amorphous vortex lattice. The total pinning force F as a function of the mean vortex displacment X increases first linearly (over a distance usually much smaller than the vortex spacing and than R/sub p/) and then saturates, fluctuating about its averaging F-bar. We interpret F-bar as the maximum pinning force j/sub c/B of a large specimen. For weak pins the prediction of Larkin and Ovchinnikov for two-dimensional collective pinning is confirmed: F-bar = const. iW/R/sub p/c 66 , where W-bar is the mean square pinning force and c 66 is the shear modulus of the vortex lattice. If the initial vortex lattice is chosen highly defective (''amorphous'') the constant is 1.3--3 times larger than for the ideal triangular lattice. This finding may explain the often observed ''history effect.'' The function F-bar(A/sub p/) exhibits a jump, which for dilute, sharp, attractive pins occurs close to the ''threshold value'' predicted for isolated pins by Labusch. This jump reflects the onset of plastic deformation of the vortex lattice, and in some cases of vortex trapping, but is not a genuine threshold

Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes

Science.gov (United States)

Cho, Himchan; Jeong, Su-Hun; Park, Min-Ho; Kim, Young-Hoon; Wolf, Christoph; Lee, Chang-Lyoul; Heo, Jin Hyuck; Sadhanala, Aditya; Myoung, NoSoung; Yoo, Seunghyup; Im, Sang Hyuk; Friend, Richard H.; Lee, Tae-Woo

2015-12-01

Organic-inorganic hybrid perovskites are emerging low-cost emitters with very high color purity, but their low luminescent efficiency is a critical drawback. We boosted the current efficiency (CE) of perovskite light-emitting diodes with a simple bilayer structure to 42.9 candela per ampere, similar to the CE of phosphorescent organic light-emitting diodes, with two modifications: We prevented the formation of metallic lead (Pb) atoms that cause strong exciton quenching through a small increase in methylammonium bromide (MABr) molar proportion, and we spatially confined the exciton in uniform MAPbBr3 nanograins (average diameter = 99.7 nanometers) formed by a nanocrystal pinning process and concomitant reduction of exciton diffusion length to 67 nanometers. These changes caused substantial increases in steady-state photoluminescence intensity and efficiency of MAPbBr3 nanograin layers.

A macroscopic cross-section model for BWR pin-by-pin core analysis

International Nuclear Information System (INIS)

Fujita, Tatsuya; Endo, Tomohiro; Yamamoto, Akio

2014-01-01

A macroscopic cross-section model used in boiling water reactor (BWR) pin-by-pin core analysis is studied. In the pin-by-pin core calculation method, pin-cell averaged cross sections are calculated for many combinations of core state and depletion history variables and are tabulated prior to core calculations. Variations of cross sections in a core simulator are caused by two different phenomena (i.e. instantaneous and history effects). We treat them through the core state variables and the exposure-averaged core state variables, respectively. Furthermore, the cross-term effect among the core state and the depletion history variables is considered. In order to confirm the calculation accuracy and discuss the treatment of the cross-term effect, the k-infinity and the pin-by-pin fission rate distributions in a single fuel assembly geometry are compared. Some cross-term effects could be negligible since the impacts of them are sufficiently small. However, the cross-term effects among the control rod history (or the void history) and other variables have large impacts; thus, the consideration of them is crucial. The present macroscopic cross-section model, which considers such dominant cross-term effects, well reproduces the reference results and can be a candidate in practical applications for BWR pin-by-pin core analysis on the normal operations. (author)

Development of a fast pin-by-pin transport solver in ARCADIA registered

International Nuclear Information System (INIS)

Geemert, R. van

2009-01-01

For satisfaction of future global customer needs, dedicated efforts are being coordinated internationally and pursued continuously at AREVA NP. The currently ongoing CONVERGENCE project is committed to the development of the ARCADIA registered next generation core simulation software package. ARCADIA registered will be put to global use by all AREVA NP business regions, for the entire spectrum of core design processes, licensing computations and safety studies. As part of the currently ongoing trend towards more sophisticated neutronics methodologies, an SP 3 nodal transport concept (van Geemert 2008) has been developed for ARTEMIS (Hobson 2008) which is the steady-state and transient core simulation part of ARCADIA registered . For enabling a high computational performance, the SP 3 calculations are accelerated by applying multi-level coarse mesh rebalancing (van Geemert 2006). In the current implementation, SP 3 is typically about 1.4 times as expensive computationally as SP 1 (diffusion). The developed SP 3 solution concept is foreseen as the future computational workhorse for many-group 3D pin-by-pin full core computations by ARCADIA registered . With the entire numerical workload being highly parallelizable through domain decomposition techniques, associated CPU-time requirements that adhere to the efficiency needs in the nuclear industry can be expected to become feasible in the near future. The accuracy enhancement obtainable by using SP 3 instead of SP 1 has been verified by a detailed comparison of ARTEMIS 16-group pin-by-pin SP N results with KAERI's DeCart reference results (Kozlowski 2003) for the 2D pin-by-pin Purdue UO 2 /MOX benchmark. Within the associated pin-by-pin grid, large pin-to-pin variations in cross-section values occur due to the explicit modelling of guide tubes, gadolinium pins as well as the heterogeneous distribution of MOX assemblies and UO 2 assemblies featuring significantly different burnups. With a pin-by-pin grid as

Sodium Loop Safety Facility W-2 experiment fuel pin rupture detection system. [LMFBR

Energy Technology Data Exchange (ETDEWEB)

Hoffman, M.A.; Kirchner, T.L.; Meyers, S.C.

1980-05-01

The objective of the Sodium Loop Safety Facility (SLSF) W-2 experiment is to characterize the combined effects of a preconditioned full-length fuel column and slow transient overpower (TOP) conditions on breeder reactor (BR) fuel pin cladding failures. The W-2 experiment will meet this objective by providing data in two technological areas: (1) time and location of cladding failure, and (2) early post-failure test fuel behavior. The test involves a seven pin, prototypic full-length fast test reactor (FTR) fuel pin bundle which will be subjected to a simulated unprotected 5 cents/s reactivity transient overpower event. The outer six pins will provide the necessary prototypic thermal-hydraulic environment for the center pin.

GaAs Schottky versus p/i/n diodes for pixellated X-ray detectors

CERN Document Server

Bourgoin, J C

2002-01-01

We discuss the performances of GaAs p/i/n structures and Schottky barriers for application as photodetectors for high-energy photons. We compare the magnitude of the leakage current and the width of the depleted region for a given reverse bias. We mention the effect of states present at the metal-semiconductor interface on the extension of the space charge region in Schottky barriers. We illustrate this effect by a description of the capacitance behaviour of a Au-GaAs barrier under gamma irradiation.

Characterization and radiation studies of diode test structures in LFoundry CMOS technology

Energy Technology Data Exchange (ETDEWEB)

Daas, Michael; Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Pohl, David-Leon; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Muenchen (Germany)

2016-07-01

In order to prepare for the High Luminosity upgrade of the LHC, all subdetector systems of the ATLAS experiment will be upgraded. In preparation for this process, different possibilities for new radiation-hard and cost-efficient silicon sensor technologies to be used as part of hybrid pixel detectors in the ATLAS inner tracker are being investigated. One promising way to optimize the cost-efficiency of silicon-based pixel detectors is to use commercially available CMOS technologies such as the 150 nm process by LFoundry. In this talk, several CMOS pixel test structures, such as simple diodes and small pixel arrays, that were manufactured in this technology are characterized regarding general performance and radiation hardness and compared to each other as well as to the current ATLAS pixel detector.

Near-infrared tunable laser diode spectroscopy: an easy way for gas sensing

Science.gov (United States)

Larive, Marc; Henriot, V.

1997-05-01

A gas sensor using optical spectrometry and dedicated to a specific gas is studied. It should be able to operate out of laboratories with a very long life and a low maintenance requirement. It is based on TLDS (tunable laser diode spectroscopy) and uses a standard Perot-Fabry laser diode already developed for telecommunications. The mode selection is realized by a passband filter and the wavelength tuning is performed via the diode temperature or its injection current. A PIN photodiode is used for detection, however a rough photoacoustic solution is intended for the future. Absorptions as low as 3.10-3 are detected with this rough system and a limit detection of 10-3 is available with a signal to noise ratio of unity. Experiments have shown that this system is strongly selective for the specified gas (currently the methane). A simulation has been performed which very well fits the experiment and allows us to extrapolate the performances of the system for other gases.

A final report for Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

CERN Document Server

Vernon, S M

1999-01-01

This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of Al sub x Ga sub 1 sub - sub x As. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10 sup - sup 1 sup 2 amps at -1 V o...

Polycrystalline Diamond Schottky Diodes and Their Applications.

Science.gov (United States)

Zhao, Ganming

In this work, four-hot-filament CVD techniques for in situ boron doped diamond synthesis on silicon substrates were extensively studied. A novel tungsten filament shape and arrangement used to obtain large-area, uniform, boron doped polycrystalline diamond thin films. Both the experimental results and radiative heat transfer analysis showed that this technique improved the uniformity of the substrate temperature. XRD, Raman and SEM studies indicate that large area, uniform, high quality polycrystalline diamond films were obtained. Schottky diodes were fabricated by either sputter deposition of silver or thermal evaporation of aluminum or gold, on boron doped diamond thin films. High forward current density and a high forward-to-reverse current ratio were exhibited by silver on diamond Schottky diodes. Schottky barrier heights and the majority carrier concentrations of both aluminum and gold contacted diodes were determined from the C-V measurements. Furthermore, a novel theoretical C-V-f analysis of deep level boron doped diamond Schottky diodes was performed. The analytical results agree well with the experimental results. Compressive stress was found to have a large effect on the forward biased I-V characteristics of the diamond Schottky diodes, whereas the effect on the reverse biased characteristics was relatively small. The stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. This result shows that CVD diamond device has potential for mechanical transducer applications. The quantitative photoresponse characteristics of the diodes were studied in the spectral range of 300 -1050 nm. Semi-transparent gold contacts were used for better photoresponse. Quantum efficiency as high as 50% was obtained at 500 nm, when a reverse bias of over 1 volt was applied. The Schottky barrier heights between either gold or

Technology Analysis of Global Smart Light Emitting Diode (LED Development Using Patent Data

Directory of Open Access Journals (Sweden)

Sangsung Park

2017-08-01

Full Text Available Technological developments related to smart light emitting diode (LED systems have progressed rapidly in recent years. In this paper, patent documents related to smart LED technology are collected and analyzed to understand the technology development of smart LED systems. Most previous studies of the technology were dependent on the knowledge and experience of domain experts, using techniques such as Delphi surveys or technology road-mapping. These approaches may be subjective and lack robustness, because the results can vary according to the selected expert groups. We therefore propose a new technology analysis methodology based on statistical modeling to obtain objective and relatively stable results. The proposed method consists of visualization based on Bayesian networks and a linear count model to analyze patent documents related to smart LED technology. Combining these results, a global hierarchical technology structure is created that can enhance the sustainability in smart LED system technology. In order to show how this methodology could be applied to real-world problems, we carry out a case study on the technology analysis of smart LED systems.

n-GaAs/InGaP/p-GaAs core-multishell nanowire diodes for efficient light-to-current conversion

Energy Technology Data Exchange (ETDEWEB)

Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Keller, Gregor; Prost, Werner; Tegude, Franz-Josef [Department of Solid-State Electronics and CeNIDE University of Duisburg-Essen, Duisburg (Germany); Braam, Daniel; Li, Zi-An; Geller, Martin; Spasova, Marina [Department of Experimental Physics and CeNIDE University of Duisburg-Essen, Duisburg (Germany)

2012-03-07

Heterostructure n-GaAs/InGaP/p-GaAs core-multishell nanowire diodes are synthesized by metal-organic vapor-phase epitaxy. This structure allows a reproducible, selective wet etching of the individual shells and therefore a simplified contacting of single nanowire p-i-n junctions. Nanowire diodes show leakage currents in a low pA range and at a high rectification ratio of 3500 (at {+-}1V). Pronounced electroluminescence at 1.4 eV is measured at room temperature and gives evidence of the device quality. Photocurrent generation is demonstrated at the complete area of the nanowire p-i-n junction by scanning photocurrent microscopy. A solar-conversion efficiency of 4.7%, an open-circuit voltage of 0.5 V and a fill factor of 52% are obtained under AM 1.5G conditions. These results will guide the development of nanowire-based photonic and photovoltaic devices. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Transformation of Helicopter PinS Procedures for Airplanes

Directory of Open Access Journals (Sweden)

Jakub Kraus

2013-09-01

Full Text Available This article deals with the possibility to use existing helicopter Point in Space procedures with minor changes for airplanes. The basis is to find parts of PinS procedures that need to be changed, suggest these changes, and then determine whether the revised procedures could be usable and could bring the benefits for airplane operations.

Position-dependency of Fuel Pin Homogenization in a Pressurized Water Reactor

Energy Technology Data Exchange (ETDEWEB)

Heo, Woong; Kim, Yonghee [Korea Advanced Institute of Science and Technolgy, Daejeon (Korea, Republic of)

2016-05-15

By considering the multi-physics effects more comprehensively, it is possible to acquire precise local parameters which can result in a more accurate core design and safety assessment. A conventional approach of the multi-physics neutronics calculation for the pressurized water reactor (PWR) is to apply nodal methods. Since the nodal methods are basically based on the use of assembly-wise homogenized parameters, additional pin power reconstruction processes are necessary to obtain local power information. In the past, pin-by-pin core calculation was impractical due to the limited computational hardware capability. With the rapid advancement of computer technology, it is now perhaps quite practical to perform the direct pin-by-pin core calculation. As such, fully heterogeneous transport solvers based on both stochastic and deterministic methods have been developed for the acquisition of exact local parameters. However, the 3-D transport reactor analysis is still challenging because of the very high computational requirement. Position-dependency of the fuel pin homogenized cross sections in a small PWR core has been quantified via comparison of infinite FA and 2-D whole core calculations with the use of high-fidelity MC simulations. It is found that the pin environmental affect is especially obvious in FAs bordering the baffle reflector regions. It is also noted that the downscattering cross section is rather sensitive to the spectrum changes of the pins. It is expected that the pinwise homogenized cross sections need to be corrected somehow for accurate pin-by-pin core calculations in the peripheral region of the reactor core.

Clinical and histomorphometrical study on titanium dioxide-coated external fixation pins

Directory of Open Access Journals (Sweden)

Koseki H

2013-02-01

Full Text Available Hironobu Koseki,1 Tomohiko Asahara,1 Takayuki Shida,1 Itaru Yoda,1 Hidehiko Horiuchi,1 Koumei Baba,2 Makoto Osaki11Department of Orthopedic Surgery, Graduate School of Medicine, Nagasaki University, 2Industrial Technology Center of Nagasaki, Nagasaki, JapanBackground: Pin site infection is the most common and significant complication of external fixation. In this work, the efficacy of pins coated with titanium dioxide (TiO2 for inhibition of infection was compared with that of stainless steel control pins in an in vivo study.Methods: Pins contaminated with an identifiable Staphylococcus aureus strain were inserted into femoral bone in a rat model and exposed to ultraviolet A light for 30 minutes. On day 14, the animals were sacrificed and the bone and soft tissue around the pin were retrieved. The clinical findings and histological findings were evaluated in 60 samples.Results: Clinical signs of infection were present in 76.7% of untreated pins, but in only 36.7% of TiO2-coated pins. The histological bone infection score and planimetric rate of occupation for bacterial colonies and neutrophils in the TiO2-coated pin group were lower than those in the control group. The bone-implant contact ratio of the TiO2-coated pin group was significantly higher (71.4% than in the control pin group (58.2%. The TiO2 was successful in decreasing infection both clinically and histomorphometrically.Conclusion: The photocatalytic bactericidal effect of TiO2 is thought to be useful for inhibiting pin site infection after external fixation.Keywords: titanium dioxide, external fixation, bactericidal activity, Staphylococcus aureus

Program of quality management when fabricating fast reactor vibropack oxide fuel pins

International Nuclear Information System (INIS)

Mayorshin, A.A.; Kisly, V.A.; Sudakov, L.V.

2000-01-01

There are presented main principles of creation and operation of Quality Management Program in fabricating vibropack oxide fuel pins for BOR-60 and BN-600 being in force in SSC RF RIAR. There is given structure of documentation for QS principal elements. Under Quality System there are defined all the procedures, assuring that fuel pin meets the normative requirements. The system model is complied with the standard model IS 9001. There are shown technologic flowchart and check operation, statistic results of pin critical parameter check as well as main results of in-pile tests. (author)

Light ion beam experiments with pinch reflex diodes on KfK's pulse generator KALIF

International Nuclear Information System (INIS)

Bluhm, H.; Buth, L.; Bohnel, K.; Harke, W.; Hoppe, P.; Karow, H.U.; Rusch, D.; Schulken, H.; Singer, J.

1985-01-01

The authors report on intense LI beam experiments currently performed with pinch reflex ion diodes on 2 ohms/1.4 TW-pulse generator KALIF (Karlsruhe Light Ion Facility). The goals of this work are the generation of highly focussed LI beams of well-defined ion composition, and the undertaking of beam-target experiments. The experimental studies with axial 6 cm phi-pinch reflex proton diodes have been aiming at the focussing characteristics of the diode, and at the ion species composition of the beam. Experiments have been performed using different diode geometries (anode/cathode/beam window foil shapes), and different anode return current paths, respectively. A variety of diagnostique techniques have been used in these studies: Electron pinch phenomena in the diode are observed by static and by gated X-ray cameras. Beam diagnostiques is based on measuring in the vacuum feed the electric parameters of the diode (electron and ion currents, diode voltage) on probing the ion composition and ion energy in the beam (by use of a Thomson Parabola spectrometer), and on the investigation of the beam focus (by use of different techniques: shadow box analysis, α-pin hole imaging, nuclear activation methods). Measurements of beam stopping power of ion beam-heated thin targets are underway using a streaked ion energy-spectrometer. The results obtained so far in these experimental efforts are presented

Electro-thermal analysis and optimisation of edge termination of power diode supported by 2-D/3-D numerical modelling and simulation

International Nuclear Information System (INIS)

Príbytný, P; Donoval, D; Chvála, A; Marek, J; Molnár, M

2014-01-01

Numerical modelling and simulation provide an efficient tool for analysis and optimization of device structure design. In this paper we present the analysis and the geometry optimization of the power module with high power pin diode structure supported by the advanced 2-D/3-D mixed-mode electro-thermal device simulation. The structure under investigation is P + NN + power diode device designed for high reverse voltages and very high forward currents, with a maximum forward surge current up to 2.7 kA.

Pin clad strains in Phenix

International Nuclear Information System (INIS)

Languille, A.

1979-07-01

The Phenix reactor has operated for 4 years in a satisfactory manner. The first 2 sub-assembly loadings contained pins clad in solution treated 316. The principal pin strains are: diametral strain (swelling and irradiation creep), ovality and spiral bending of the pin (interaction of wire and pin cluster and wrapper). A pin cluster irradiated to a dose of 80 dpa F reached a pin diameter strain of 5%. This strain is principally due to swelling (low fission gas pressure). The principal parameters governing the swelling are instantaneous dose, time and temperature for a given type of pin cladding. Other types of steel are or will be irradiated in Phenix. In particular, cold-worked titanium stabilised 316 steel should contribute towards a reduction in the pin clad strains and increase the target burn-up in this reactor. (author)

Pin care

Science.gov (United States)

... Drugs & Supplements Videos & Tools Español You Are Here: Home → Medical Encyclopedia → Pin care URL of this page: //medlineplus.gov/ency/patientinstructions/000481.htm Pin care To use the sharing features on this page, please enable JavaScript. Broken bones can be fixed in surgery with metal ...

Genome-wide identification and evolution of the PIN-FORMED (PIN) gene family in Glycine max.

Science.gov (United States)

Liu, Yuan; Wei, Haichao

2017-07-01

Soybean (Glycine max) is one of the most important crop plants. Wild and cultivated soybean varieties have significant differences worth further investigation, such as plant morphology, seed size, and seed coat development; these characters may be related to auxin biology. The PIN gene family encodes essential transport proteins in cell-to-cell auxin transport, but little research on soybean PIN genes (GmPIN genes) has been done, especially with respect to the evolution and differences between wild and cultivated soybean. In this study, we retrieved 23 GmPIN genes from the latest updated G. max genome database; six GmPIN protein sequences were changed compared with the previous database. Based on the Plant Genome Duplication Database, 18 GmPIN genes have been involved in segment duplication. Three pairs of GmPIN genes arose after the second soybean genome duplication, and six occurred after the first genome duplication. The duplicated GmPIN genes retained similar expression patterns. All the duplicated GmPIN genes experienced purifying selection (K a /K s genome sequence of 17 wild and 14 cultivated soybean varieties. Our research provides useful and comprehensive basic information for understanding GmPIN genes.

Experimental and numerical study of Bondura® 6.6 PIN joints

Science.gov (United States)

Berkani, I.; Karlsen, Ø.; Lemu, H. G.

2017-12-01

Pin joints are widely used in heavy-duty machinery such as aircrafts, cranes and offshore drilling equipment to transfer multi-dimensional shear forces. Their strength and service life depend on the clamping force in the contact region that is provided by interference fits. Though the interference fits provide full contact at the pin-hole interface under pretension loads, the contact interface reduces when the pin is subjected to an external load and hence a smaller contact surface leads to dramatic increase of the contact stress. The PIN joint of Bondura® Technology, investigated in this study, is an innovative solution intended to reduce the slack at the contact surface of the pin joint of heavy-duty machinery by using tapered sleeves on each end of the PIN. The study is aimed to better understand the contact pressure build-up and stress distribution in the supporting contact surface under pre-loading of the joint and the influence of temperature difference between part assembly and operation conditions. Numerical simulation using finite element method and diverse experimental tests were conducted. The numerical simulation and the test results, particularly the tests conducted with lubricated joints, show good conformance.

Phosphorylation of conserved PIN motifs directs Arabidopsis PIN1 polarity and auxin transport

NARCIS (Netherlands)

Huang, F.; Kemel Zago, M.; Abas, L.; van Marion, A.; Galván-Ampudia, C.S.; Offringa, R.

2010-01-01

Polar cell-to-cell transport of auxin by plasma membrane-localized PIN-FORMED (PIN) auxin efflux carriers generates auxin gradients that provide positional information for various plant developmental processes. The apical-basal polar localization of the PIN proteins that determines the direction of

Next generation DIRCM for 2.1-2.3 micron wavelength based on direct-diode GaSb technology

Science.gov (United States)

Dvinelis, Edgaras; Naujokaitė, Greta; Greibus, Mindaugas; Trinkūnas, Augustinas; Vizbaras, Kristijonas; Vizbaras, Augustinas

2018-02-01

Continuous advances in low-cost MANPAD heat-seeking missile technology over the past 50 years remains the number one hostile threat to airborne platforms globally responsible for over 60 % of casualties. Laser based directional countermeasure (DIRCM) technology have been deployed to counter the threat. Ideally, a laser based DIRCM system must involve a number of lasers emitting at different spectral bands mimicking the spectral signature of the airborne platform. Up to now, near and mid infrared spectral bands have been covered with semiconductor laser technology and only SWIR band remained with bulky fiber laser technology. Recent technology developments on direct-diode GaSb laser technology at Brolis Semiconductors offer a replacement for the fiber laser source leading to significant improvements by few orders of magnitude in weight, footprint, efficiency and cost. We demonstrate that with careful engineering, several multimode emitters can be combined to provide a directional laser beam with radiant intensity from 10 kW/sr to 60 kW/sr in an ultra-compact hermetic package with weight < 30 g and overall efficiency of 15 % in the 2.1- 2.3 micron spectral band offering 150 times improvement in efficiency and reduction in footprint. We will discuss present results, challenges and future developments for such next-generation integrated direct diode DIRCM modules for SWIR band.

Quasi-CW Laser Diode Bar Life Tests

Science.gov (United States)

Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

1997-01-01

NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

Flux Pinning in Superconductors

CERN Document Server

Matsushita, Teruo

2007-01-01

The book covers the flux pinning mechanisms and properties and the electromagnetic phenomena caused by the flux pinning common for metallic, high-Tc and MgB2 superconductors. The condensation energy interaction known for normal precipitates or grain boundaries and the kinetic energy interaction proposed for artificial Nb pins in Nb-Ti, etc., are introduced for the pinning mechanism. Summation theories to derive the critical current density are discussed in detail. Irreversible magnetization and AC loss caused by the flux pinning are also discussed. The loss originally stems from the ohmic dissipation of normal electrons in the normal core driven by the electric field induced by the flux motion. The readers will learn why the resultant loss is of hysteresis type in spite of such mechanism. The influence of the flux pinning on the vortex phase diagram in high Tc superconductors is discussed, and the dependencies of the irreversibility field are also described on other quantities such as anisotropy of supercondu...

Applicability of the diffusion and simplified P3 theories for BWR pin-by-pin core analysis

International Nuclear Information System (INIS)

Tada, Kenichi; Yamamoto, Akio; Kitamura, Yasunori; Yamane, Yoshihiro; Watanabe, Masato; Noda, Hiroshi

2007-01-01

The pin-by-pin fine mesh core calculation method is considered as a candidate of next-generation core calculation method for BWR. In this study, the diffusion and the simplified P 3 (SP 3 ) theories are applied to the pin-by-pin core analysis of BWR. Performances of the diffusion and the SP 3 theories for cell-homogeneous pin-by-pin fine mesh BWR core analysis are evaluated through comparison with cell-heterogeneous detailed transport calculation by the method of characteristics (MOC). In this study, two-dimensional, 2x2 multi-assemblies geometry is used to compare the prediction accuracies of the diffusion and the SP 3 theories. The 2x2 multi- assemblies geometry consists of two types of 9x9 UO 2 assembly that have two different enrichment splittings. To mitigate the cell-homogenization error, the SPH method is applied for the pin-by-pin fine mesh calculation. The SPH method is a technique that reproduces a result of heterogeneous calculation by that of homogeneous calculation. The calculation results indicated that diffusion theory shows larger discrepancy than that of SP 3 theory on pin-wise fission rates. Furthermore, the accuracy of the diffusion theory would not be sufficient for the pin-by-pin fine mesh calculation. In contrast to the diffusion theory, the SP 3 theory shows much better accuracy on pin wise fission rates. Therefore, if the SP 3 theory is applied, the accuracy of the pin-by-pin fine mesh BWR core analysis will be higher and will be sufficient for production calculation. (author)

Investigation on macroscopic cross section model for BWR pin-by-pin core analysis - 118

International Nuclear Information System (INIS)

Fujita, T.; Tada, K.; Yamamoto, A.; Yamane, Y.; Kosaka, S.; Hirano, G.

2010-01-01

A cross section model used in the pin-by-pin core analysis for BWR is investigated. In the pin-by-pin core calculation method, pin-cell averaged cross sections are calculated for many combinations of state and history variables that have influences on the cross section and are tabulated prior to the core calculations. Variation of a cross section in a core simulator is classified into two different types, i.e., the instantaneous effect and the history effect. The instantaneous effect is incorporated by the variation of cross section which is caused by the instantaneous change of state variables. For this effect, the exposure, the void fraction, the fuel temperature, the moderator temperature and the control rod are used as indexes. The history effect is the cumulative effect of state variables. We treat this effect with a unified approach using the spectral history. To confirm accuracy of the cross section model, the pin-by-pin fission rate distribution and the k-infinity of fuel assembly which are obtained with the tabulated and the reference cross sections are compared. For the instantaneous effect, the present cross section model well reproduces the reference results for all off-nominal conditions. For the history effect, however, considerable differences both on the pin-by-pin fission rate distribution and the k-infinity are observed at high exposure points. (authors)

Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

Science.gov (United States)

Marrs, Michael A; Raupp, Gregory B

2016-07-26

Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

Detection and dosimetry studies on the response of silicon diodes to an 241Am-Be source

International Nuclear Information System (INIS)

Lotfi, Y; Dizaji, H Zaki; Davani, F Abbasi

2014-01-01

Silicon diode detectors show potential for the development of an active personal dosimeter for neutron and photon radiation. Photons interact with the constituents of the diode detector and produce electrons. Fast neutrons interact with the constituents of the diode detector and converter, producing recoil nuclei and causing (n,α) and (n,p) reactions. These photon- and neutron-induced charged particles contribute to the response of diode detectors. In this work, a silicon pin diode was used as a detector to produce pulses created by photon and neutron. A polyethylene fast neutron converter was used as a recoil proton source in front of the detector. The total registered photon and neutron efficiency and the partial contributions of the efficiency, due to interactions with the diode and converter, were calculated. The results show that the efficiency of the converter-diode is a function of the incident photon and neutron energy. The optimized thicknesses of the converter for neutron detection and neutron dosimetry were found to be 1 mm and 0.1 mm respectively. The neutron records caused by the (n,α) and (n,p) reactions were negligible. The photon records were strongly dependent upon the energy and the depletion layer of the diode. The photons and neutrons efficiency of the diode-based dosimeter was calculated by the MCNPX code, and the results were in good agreement with experimental results for photons and neutrons from an 241 Am-Be source

New Optoelectronic Technology Simplified for Organic Light Emitting Diode (OLED

Directory of Open Access Journals (Sweden)

Andre F. S. Guedes

2014-06-01

Full Text Available The development of Organic Light Emitting Diode (OLED, using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene, PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis, Optical Parameters (OP and Scanning Electron Microscopy (SEM. In addition, the thin film obtained by the deposition of PANI, prepared in perchloric acid solution, was identified through PANI-X1. The result obtained by UV-Vis has demonstrated that the Quartz/ITO/PEDOT/PANI-X1 layer does not have displacement of absorption for wavelengths greaters after spin-coating and electrodeposition. Thus, the spectral irradiance of the OLED informed the irradiance of 100 W/m2, and this result, compared with the standard Light Emitting Diode (LED, has indicated that the OLED has higher irradiance. After 1000 hours of electrical OLED tests, the appearance of nanoparticles visible for images by SEM, to the migration process of organic semiconductor materials, was present, then. Still, similar to the phenomenon of electromigration observed in connections and interconnections of microelectronic devices, the results have revealed a new mechanism of migration, which raises the passage of electric current in OLED.

Research on Pin Tumbler Locks and the Characteristics of Surface Traces Formed by Unlocking Guns

Science.gov (United States)

Yi, Gao; Yifeng, Jin; Yanping, Bai; Hongcheng, Mei; Zhen, Xu

2018-02-01

In this paper, taking the structure of the pin tumbler locks and the principle of opening and closing locks as breakthrough point, we have studied the machining traces of pin tumbler components and trace characters of pin surface during normal operating. At the same time, taking the unlocking gun as an example, the paper analyzes the unlocking technology and the formation of traces, and summarizes the changing rules of the surface traces of elastic bead locks by comparing the positions and the characteristics of the traces, which provides technical support for the future study of traces of pin tumbler locks.

Further developments in NbTi superconductors with artificial pinning centers

International Nuclear Information System (INIS)

Kanithi, H.C.; Valaris, P.; Motowidlo, L.R.; Zeitlin, B.A.; Scanlan, R.M.

1992-01-01

Artificial pinning centers (APC) have been successfully incorporated in multifilamentary NbTi based superconductors. using pure niobium as the pinning material and applying state-of-the-art processing technology, we have developed conductors which exhibit record low-field current densities. Two volume fractions of Nb have been investigated. One of the objectives of the present development effort is the feasibility study of billet scale-up from earlier work. A J 3 (3T) of ∼7500 A/mm 2 , which is twice that of the present MRI conductors, and a J c (5T) of ∼3400 A/mm 2 , have been achieved in samples. The results of this ongoing effort, in terms of conductor configuration, microstructure, critical current density, and pinning force, are presented in this paper. Appropriate comparisons with past performances are made

Defect pin behaviour in the DFR

International Nuclear Information System (INIS)

Sloss, W.M.; Bagley, K.Q.; Edmonds, E.; Potter, P.E.

1979-01-01

A program of defective fuel pin irradiations has been carried out in the DFR. This program employed fuel pins which had failed during previous irradiations (natural defects) and pins in which simulated failures (artificial defects) had been induced prior to irradiation or during an intermediate examination stage at moderate or substantial burnups. The artificial defects simulated longitudinal ruptures and were normally located at positions near the top, middle and bottom of the pin where clad temperatures were 450, 540 and 630 0 C respectively. The fuel was mixed U-Pu oxide, and fuel form, stoichiometry, clad type, pin diameter, linear rating, and burnup were among the variables examined. The defect pin tests were normally carried out in single pin or trefoil type vehicles. After irradiation all the pins were subjected to the normal nondestructive examination procedures and the visual, radiographic, gamma-scanning, and dimensional change results are presented. Several pins were destructively examined and the metallographic data are discussed

A physico-genetic module for the polarisation of auxin efflux carriers PIN-FORMED (PIN)

Science.gov (United States)

Hernández-Hernández, Valeria; Barrio, Rafael A.; Benítez, Mariana; Nakayama, Naomi; Romero-Arias, José Roberto; Villarreal, Carlos

2018-05-01

Intracellular polarisation of auxin efflux carriers is crucial for understanding how auxin gradients form in plants. The polarisation dynamics of auxin efflux carriers PIN-FORMED (PIN) depends on both biomechanical forces as well as chemical, molecular and genetic factors. Biomechanical forces have shown to affect the localisation of PIN transporters to the plasma membrane. We propose a physico-genetic module of PIN polarisation that integrates biomechanical, molecular, and cellular processes as well as their non-linear interactions. The module was implemented as a discrete Boolean model and then approximated to a continuous dynamic system, in order to explore the relative contribution of the factors mediating PIN polarisation at the scale of single cell. Our models recovered qualitative behaviours that have been experimentally observed and enable us to predict that, in the context of PIN polarisation, the effects of the mechanical forces can predominate over the activity of molecular factors such as the GTPase ROP6 and the ROP-INTERACTIVE CRIB MOTIF-CONTAINING PROTEIN RIC1.

Improved pinning by multiple in-line damage

Energy Technology Data Exchange (ETDEWEB)

Weinstein, Roy [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Sawh, Ravi-Persad [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Gandini, Alberto [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Parks, Drew [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States)

2005-02-01

Columnar pinning centres provide the largest pinning potential, U{sub pin}, but not the greatest J{sub c} or pinnable field, B{sub pin}. Characteristics of ion-generated columnar defects which limit J{sub c} and B{sub pin} are discussed, including reduction of the percolation path, and the need for a larger number of columns of damage, for pinning, than are usually estimated. It is concluded that columnar pinning centres limit B{sub pin} to less than 4 T, and also severely reduce J{sub c}. The goal of maximizing U{sub pin}, via columnar centres, appears to have obscured a more rewarding approach and resulted in neglect of a large regime of ion interactions. Evidence is reviewed that multiple in-line damage (MILD), described herein, can provide orders of magnitude higher J{sub c} and B{sub pin}, despite providing lower U{sub pin}. The MILD pinning centre morphology is discussed, and it is estimated that for present-day large grain high T{sub c} superconductors, a J{sub c} value of {approx}10{sup 6}Acm{sup -2} is obtainable at 77 K, even when crystal plane alignment and weak links are not improved. In addition, the pinned field is increased by over an order of magnitude. An experiment is proposed to confirm these calculations, directly compare MILD pinning to continuous columnar pinning, and determine the optimum MILD structure. Applications of MILD pinning are discussed.

Electronic technology

International Nuclear Information System (INIS)

Kim, Jin Su

2010-07-01

This book is composed of five chapters, which introduces electronic technology about understanding of electronic, electronic component, radio, electronic application, communication technology, semiconductor on its basic, free electron and hole, intrinsic semiconductor and semiconductor element, Diode such as PN junction diode, characteristic of junction diode, rectifier circuit and smoothing circuit, transistor on structure of transistor, characteristic of transistor and common emitter circuit, electronic application about electronic equipment, communication technology and education, robot technology and high electronic technology.

Fuel pin transfer tool

International Nuclear Information System (INIS)

Patenaude, R. S.

1985-01-01

A fuel pin transfer tool has a latching device of the collet type attached to a first member movable vertically through a long work stroke enabling a fuel pin in an under water assembly to be engaged and withdrawn therefrom or placed therein and released. The latching device has a collet provided with a plurality of resilient fingers having cam portions normally spaced apart to receive the upper end of a fuel pin between them and a second member, movable vertically through a short stroke relative to the first member is provided with cam portions engageable with those of the fingers and is yieldably and resiliently held in a raised position in which its cam portions engage those of the fingers and force the fingers into their pin-gripping positions. When a predetermined force is applied to the second member, it is so moved that its cam portions are disengaged from the cam portions of the fingers permitting the latter to move into their normal relationship in which a gripped pin is released or another pin received but with their pin-gripping relationship positively re-established and maintained once the force on the tubular member is lessened. Movement of the first member in either direction and movement of the second member into its raised position is attended by forces inadequate to affect the integrity of fuel pin cladding. That force is applied in the preferred embodiment, by a power operated actuator which is within the upper portion of a housing and, in the preferred embodiment, carried by the long stroke member but always in the upper housing portion which is of a material sufficiently translucent to enable the actuator to be observed throughout the work stroke and is sufficiently light in weight to prevent the tool from being top heavy

0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

International Nuclear Information System (INIS)

MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

2004-01-01

Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm 2 multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm 2 respectively at operating at temperatures of T radiator = 950 C and T diode = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and ∼0.85 W/cm 2 could be attained under the above operating temperatures

Fabrication drawings of fuel pins for FUJI project among PSI, JNC and NRG. Revised version

International Nuclear Information System (INIS)

Ozawa, Takayuki; Nakazawa, Hiroaki; Abe, Tomoyuki; Nagayama, Masahiro

2002-02-01

Irradiation tests and post-irradiation examinations in the framework of JNC-PSI-NRG collaboration project will be performed in 2003-2005. Irradiation fuel pins will be fabricated by the middle of 2003. The fabrication procedure for irradiation fuel pins has been started in 2001. Several fabrication tests and qualification tests in JNC and PSI (Paul Scherrer Institute, Switzerland) have been performed before the fuel pin fabrication. According to the design assignment between PSI and JNC in the frame of this project, PSI should make a specification document for the fuel pellet, the sphere-pac fuel particles, the vipac fuel particles, and the fuel pin. JNC should make a fabrication drawing for irradiation pins. JNC has been performed the fuel design in cooperation with PSI and NRG (Nuclear Research and Consultancy Group, Netherlands). In this project, the pelletized fuel, the sphere-pac fuel, and the vipac fuel will be simultaneously irradiated on HFR (High Flux Reactor, Netherlands). This fabrication drawing has been made under the design assignment with PSI, and consists of the drawing of MOX pellet, thermal insulator pellet, pin components, fuel segments, and the constructed pin. The fabrication drawings were approved in October 2001, but after that, the optimization of specifications has been discussed and agreed among all partners. In this report, the revised fabrication drawings will be shown. Based on the commission of Plutonium Fuel Technology Group, Advanced Fuel Recycle Technology Division, this design work has been performed in Fuel Design and Evaluation Group, Plutonium Fuel Fabrication Division, Plutonium Fuel Center. (author)

High-performance whole core Pin-by-Pin calculation based on EFEN-SP_3 method

International Nuclear Information System (INIS)

Yang Wen; Zheng Youqi; Wu Hongchun; Cao Liangzhi; Li Yunzhao

2014-01-01

The EFEN code for high-performance PWR whole core pin-by-pin calculation based on the EFEN-SP_3 method can be achieved by employing spatial parallelization based on MPI. To take advantage of the advanced computing and storage power, the entire problem spatial domain can be appropriately decomposed into sub-domains and the assigned to parallel CPUs to balance the computing load and minimize communication cost. Meanwhile, Red-Black Gauss-Seidel nodal sweeping scheme is employed to avoid the within-group iteration deterioration due to spatial parallelization. Numerical results based on whole core pin-by-pin problems designed according to commercial PWRs demonstrate the following conclusions: The EFEN code can provide results with acceptable accuracy; Communication period impacts neither the accuracy nor the parallel efficiency; Domain decomposition methods with smaller surface to volume ratio leads to greater parallel efficiency; A PWR whole core pin-by-pin calculation with a spatial mesh 289 × 289 × 218 and 4 energy groups could be completed about 900 s by using 125 CPUs, and its parallel efficiency is maintained at about 90%. (authors)

MICROCONTROLLER PIN CONFIGURATION TOOL

OpenAIRE

Bhaskar Joshi; F. Mohammed Rizwan; Dr. Rajashree Shettar

2012-01-01

Configuring the micro controller with large number of pins is tedious. Latest Infine on microcontroller contains more than 200 pins and each pin has classes of signals. Therefore the complexity of the microcontroller is growing. It evolves looking into thousands of pages of user manual. For a user it will take days to configure the microcontroller with the peripherals. We need an automated tool to configure the microcontroller so that the user can configure the microcontroller without having ...

Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

Science.gov (United States)

Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

2013-08-01

Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

Stress relaxation of thermally bowed fuel pins

International Nuclear Information System (INIS)

Crossland, I.G.; Speight, M.V.

1983-01-01

The presence of cross-pin temperature gradients in nuclear reactor fuel pins produces differential thermal expansion which, in turn, causes the fuel pin to bow elastically. If the pin is restrained in any way, such thermal bowing causes the pin to be stressed. At high temperatures these stresses can relax by creep and it is shown here that this causes the pin to suffer an additional permanent deflection, so that when the cross-pin temperature difference is removed the pin remains bowed. By representing the cylindrical pin by an equivalent I-beam, the present work examines this effect when it takes place by secondary creep. Two restraint systems are considered, and it is demonstrated that the rate of relaxation depends mainly upon the creep equation, and hence the temperature, and also the magnitude of the initial stresses. (author)

Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

Science.gov (United States)

Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

2017-06-27

Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

Post-irradiation examination of a fuel pin using a microscopic X-ray system: Measurement of carbon deposition and pin metrology

International Nuclear Information System (INIS)

Gras, Ch.; Stanley, S.J.

2008-01-01

The paper presents some interesting aspects associated with X-ray imaging and its potential application in the nuclear industry. The feasibility of using X-ray technology for the post-irradiation examination of a fuel pin has been explored, more specifically pin metrology and carbon deposition measurement. The non-active sample was specially designed to mimic the structure of an AGR fuel pin whilst a carbon based material was applied to the mock up fuel rod in order to mimic carbon deposition. Short duration low energy (50 kV) 2D digital radiography was employed and provided encouraging results (with respect to carbon deposition thickness and structure measurements) for the mock up fuel pin with a spatial resolution of around 10 μm. Obtaining quantitative data from the resultant images is the principal added value associated with X-ray imaging. A higher intensity X-ray beam (≥90 kV) was also used in conjunction with the low energy set-up to produce a clear picture of the cladding as well as the interface between the lead (Pb mimics the uranium oxide) and stainless steel cladding. Spent fuel metrology and routine radiography are two additional tasks that X-ray imaging could perform for the post-irradiation examination programme. Therefore, when compared to other techniques developed to deliver information on one particular parameter, X-ray imaging offers the possibility to extract useful information on a range of parameters

Molecular diodes in optical rectennas

Science.gov (United States)

Duché, David; Palanchoke, Ujwol; Terracciano, Luigi; Dang, Florian-Xuan; Patrone, Lionel; Le Rouzo, Judikael; Balaban, Téodore Silviu; Alfonso, Claude; Charai, Ahmed; Margeat, Olivier; Ackermann, Jorg; Gourgon, Cécile; Simon, Jean-Jacques; Escoubas, Ludovic

2016-09-01

The photo conversion efficiencies of the 1st and 2nd generat ion photovoltaic solar cells are limited by the physical phenomena involved during the photo-conversion processes. An upper limit around 30% has been predicted for a monojunction silicon solar cell. In this work, we study 3rd generation solar cells named rectenna which could direct ly convert visible and infrared light into DC current. The rectenna technology is at odds with the actual photovoltaic technologies, since it is not based on the use of semi-conducting materials. We study a rectenna architecture consist ing of plasmonic nano-antennas associated with rectifying self assembled molecular diodes. We first opt imized the geometry of plasmonic nano-antennas using an FDTD method. The optimal antennas are then realized using a nano-imprint process and associated with self assembled molecular diodes in 11- ferrocenyl-undecanethiol. Finally, The I(V) characterist ics in darkness of the rectennas has been carried out using an STM. The molecular diodes exhibit averaged rect ification ratios of 5.

Automated system for loading nuclear fuel pins

International Nuclear Information System (INIS)

Marshall, J.L.

1983-10-01

A completely automatic and remotely controlled fuel pin fabrication system is being designed by the Westinghouse Hanford Company. The Pin Operations System will produce fuel pins for the Fast Flux Test Facility (FFTF) and the Clinch River Breeder Reactor Plant (CRBRP). The system will assemble fuel pin components into cladding tubes in a controlled environment. After fuel loading, the pins are filled with helium, the tag gas capsules are inserted, and the top end cap welded. Following welding, the pins are surveyed to assure they are free of contamination and then the pins are helium leak tested

A proposed parameterization of interface discontinuity factors depending on neighborhood for pin-by-pin diffusion computations for LWR

International Nuclear Information System (INIS)

Herrero, Jose Javier; Garcia-Herranz, Nuria; Ahnert, Carol

2011-01-01

There exists an interest in performing full core pin-by-pin computations for present nuclear reactors. In such type of problems the use of a transport approximation like the diffusion equation requires the introduction of correction parameters. Interface discontinuity factors can improve the diffusion solution to nearly reproduce a transport solution. Nevertheless, calculating accurate pin-by-pin IDF requires the knowledge of the heterogeneous neutron flux distribution, which depends on the boundary conditions of the pin-cell as well as the local variables along the nuclear reactor operation. As a consequence, it is impractical to compute them for each possible configuration. An alternative to generate accurate pin-by-pin interface discontinuity factors is to calculate reference values using zero-net-current boundary conditions and to synthesize afterwards their dependencies on the main neighborhood variables. In such way the factors can be accurately computed during fine-mesh diffusion calculations by correcting the reference values as a function of the actual environment of the pin-cell in the core. In this paper we propose a parameterization of the pin-by-pin interface discontinuity factors allowing the implementation of a cross sections library able to treat the neighborhood effect. First results are presented for typical PWR configurations. (author)

A proposed parameterization of interface discontinuity factors depending on neighborhood for pin-by-pin diffusion computations for LWR

Energy Technology Data Exchange (ETDEWEB)

Herrero, Jose Javier; Garcia-Herranz, Nuria; Ahnert, Carol, E-mail: herrero@din.upm.es, E-mail: nuria@din.upm.es, E-mail: carol@din.upm.es [Departamento de Ingenieria Nuclear, Universidad Politecnica de Madrid (Spain)

2011-07-01

There exists an interest in performing full core pin-by-pin computations for present nuclear reactors. In such type of problems the use of a transport approximation like the diffusion equation requires the introduction of correction parameters. Interface discontinuity factors can improve the diffusion solution to nearly reproduce a transport solution. Nevertheless, calculating accurate pin-by-pin IDF requires the knowledge of the heterogeneous neutron flux distribution, which depends on the boundary conditions of the pin-cell as well as the local variables along the nuclear reactor operation. As a consequence, it is impractical to compute them for each possible configuration. An alternative to generate accurate pin-by-pin interface discontinuity factors is to calculate reference values using zero-net-current boundary conditions and to synthesize afterwards their dependencies on the main neighborhood variables. In such way the factors can be accurately computed during fine-mesh diffusion calculations by correcting the reference values as a function of the actual environment of the pin-cell in the core. In this paper we propose a parameterization of the pin-by-pin interface discontinuity factors allowing the implementation of a cross sections library able to treat the neighborhood effect. First results are presented for typical PWR configurations. (author)

Diode lasers: From laboratory to industry

Science.gov (United States)

Nasim, Hira; Jamil, Yasir

2014-03-01

The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

Internal fuel pin oxidizer

International Nuclear Information System (INIS)

Andrews, M.G.

1978-01-01

A nuclear fuel pin has positioned within it material which will decompose to release an oxidizing agent which will react with the cladding of the pin and form a protective oxide film on the internal surface of the cladding

Whole-Pin Furnace system: An experimental facility for studying irradiated fuel pin behavior under potential reactor accident conditions

International Nuclear Information System (INIS)

Liu, Y.Y.; Tsai, H.C.; Donahue, D.A.; Pushis, D.O.; Savoie, F.E.; Holland, J.W.; Wright, A.E.; August, C.; Bailey, J.L.; Patterson, D.R.

1990-05-01

The whole-pin furnace system is a new in-cell experimental facility constructed to investigate how irradiated fuel pins may fail under potential reactor accident conditions. Extensive checkouts have demonstrated excellent performance in remote operation, temperature control, pin breach detection, and fission gas handling. The system is currently being used in testing of EBIR-II-irradiated Integral Fast Reactor (IFR) metal fuel pins; future testing will include EBR-II-irradiated mixed-oxide fuel pins. 7 refs., 4 figs

French approach in fuel pin modelling for fast reactors

Energy Technology Data Exchange (ETDEWEB)

Pascard, R [CEA-Centre de Fontenay-aux-Roses, Fontenay-aux-Roses (France)

1979-12-01

The purpose of this paper is to present the general philosophy on the problem of fuel modelling now prevailing in France after a twelve years period of tremendously increasing knowledge on fuel behavior. When the Rapsodie fuel pin was designed in 1962 , little was known about the behavior of a mixed oxide fuel pin under fast flux ; but a large body of knowledge on UO{sub 2} behavior in thermal reactor was available together with some sparse irradiation results on (U Pu)O{sub 2} in French experimental reactors. The performances assigned to the pin were then rather modest in rating (400 w/cm) and in burnup (30,000 MWd/t). The AISI 316 steel in solution annealed state was chosen as cladding material. The clad itself was supposed to deform by thermal creep due to fission gas pressure (100% release), and was affected consequently by a strain limit criteria. The importance of clad temperature ({approx}650 deg.) was considered only in connection with thermal creep, the possibility of a chemical reaction between mixed oxide and clad being at that time hardly suspected. Rapsodie had only been at full power for a few months when appeared the evidence of stainless steel swelling under a fast neutrons flux. This swelling was observed on Rapsodie pins as soon as they experienced sufficient neutrons dose, roughly one year later. This entirely new problem came immediately in the front stage (and is still of major importance today), and was at the origin of the change from the Rapsodie to the Fortissimo core in order to accelerate materials testing versus void swelling by multiplying the flux by a factor two. Even with unforeseen swelling, the design of the Rapsodie and later on Fortissimo pin, allowed not only to reach the goal burnup, but to increase it steadily to roughly 100,000 MWd/t. Since then, the French approach in fuel pin design has still retained something of its original simplicity, and technological efficiency, attitude which is justified by the following

Analytical method for reconstruction pin to pin of the nuclear power density distribution

International Nuclear Information System (INIS)

Pessoa, Paulo O.; Silva, Fernando C.; Martinez, Aquilino S.

2013-01-01

An accurate and efficient method for reconstructing pin to pin of the nuclear power density distribution, involving the analytical solution of the diffusion equation for two-dimensional neutron energy groups in homogeneous nodes, is presented. The boundary conditions used for analytic as solution are the four currents or fluxes on the surface of the node, which are obtained by Nodal Expansion Method (known as NEM) and four fluxes at the vertices of a node calculated using the finite difference method. The analytical solution found is the homogeneous distribution of neutron flux. Detailed distributions pin to pin inside a fuel assembly are estimated by the product of homogeneous flux distribution by local heterogeneous form function. Furthermore, the form functions of flux and power are used. The results obtained with this method have a good accuracy when compared with reference values. (author)

Analytical method for reconstruction pin to pin of the nuclear power density distribution

Energy Technology Data Exchange (ETDEWEB)

Pessoa, Paulo O.; Silva, Fernando C.; Martinez, Aquilino S., E-mail: ppessoa@con.ufrj.br, E-mail: fernando@con.ufrj.br, E-mail: aquilino@imp.ufrj.br [Coordenacao dos Programas de Pos-Graduacao em Engenharia (COPPE/UFRJ), Rio de Janeiro, RJ (Brazil)

2013-07-01

An accurate and efficient method for reconstructing pin to pin of the nuclear power density distribution, involving the analytical solution of the diffusion equation for two-dimensional neutron energy groups in homogeneous nodes, is presented. The boundary conditions used for analytic as solution are the four currents or fluxes on the surface of the node, which are obtained by Nodal Expansion Method (known as NEM) and four fluxes at the vertices of a node calculated using the finite difference method. The analytical solution found is the homogeneous distribution of neutron flux. Detailed distributions pin to pin inside a fuel assembly are estimated by the product of homogeneous flux distribution by local heterogeneous form function. Furthermore, the form functions of flux and power are used. The results obtained with this method have a good accuracy when compared with reference values. (author)

Performance of refractory alloy-clad fuel pins

International Nuclear Information System (INIS)

Dutt, D.S.; Cox, C.M.; Millhollen, M.K.

1984-12-01

This paper discusses objectives and basic design of two fuel-cladding tests being conducted in support of SP-100 technology development. Two of the current space nuclear power concepts use conventional pin type designs, where a coolant removes the heat from the core and transports it to an out-of-core energy conversion system. An extensive irradiation testing program was conducted in the 1950's and 1960's to develop fuel pins for space nuclear reactors. The program emphasized refractory metal clad uranium nitride (UN), uranium carbide (UC), uranium oxide (UO 2 ), and metal matrix fuels (UCZr and BeO-UO 2 ). Based on this earlier work, studies presented here show that UN and UO 2 fuels in conjunction with several refractory metal cladding materials demonstrated high potential for meeting space reactor requirements and that UC could serve as an alternative but higher risk fuel

Pinning of fullerene lowest unoccupied molecular orbital edge at the interface with standing up copper phthalocyanine

International Nuclear Information System (INIS)

Wang, Chenggong; Irfan, Irfan; Turinske, Alexander J.; Gao, Yongli

2012-01-01

The electronic structure evolution of interfaces of fullerene (C 60 ) with copper phthalocyanine (CuPc) on highly oriented pyrolitic graphite (HOPG) and on native silicon oxide has been investigated with ultra-violet photoemission spectroscopy and inverse photoemission spectroscopy. The lowest unoccupied molecular orbital edge of C 60 was found to be pinned at the interface with CuPc on SiO 2 . A substantial difference in the electron affinity of CuPc on the two substrates was observed as the orientation of CuPc is lying flat on HOPG and standing up on SiO 2 . The ionization potential and electron affinity of C 60 were not affected by the orientation of CuPc due to the spherical symmetry of C 60 molecules. We observed band bending in C 60 on the standing-up orientation of CuPc molecules, while the energy levels of C 60 on the flat lying orientation of CuPc molecules were observed to be flat. - Highlights: ► Orientation of copper phthalocyanine (CuPc) on ordered graphite and silicon oxide. ► Pinning of lowest unoccupied molecular orbital edge of C60 to the Fermi level on CuPc. ► No C60 pinning or band bending was observed on flat laying CuPc. ► Results are useful for organic photovoltaic and organic light emitting diode research.

Optimization study on pin tip diameter of an impact-pin nozzle at high pressure ratio

Energy Technology Data Exchange (ETDEWEB)

Kumar, C. Palani; Lee, Kwon Hee [FMTRC, Daejoo Machinery Co. Ltd., Daegu (Korea, Republic of); Park, Tae Choon; Cha, Bong Jun [Engine Components Research Team, Korea Aerospace Research Institute, Daejeon (Korea, Republic of); Kim, Heuy Dong [Dept. of Mechanical Engineering, Andong National University, Andong (Korea, Republic of)

2016-09-15

Wet compression system is typically installed in a gas turbine engine to increase the net power output and efficiency. A crucial component of the wet compression system is the nozzle which generates fine water droplets for injection into the compressor. The main objective of present work is to optimize a kind of nozzle called impact-pin spray nozzle and thereby produce better quality droplets. To achieve this, the dynamics occurring in the water jet impinging on the pin tip, the subsequent formation of water sheet, which finally breaks into water droplets, must be studied. In this manuscript, the progress on the numerical studies on impact-pin nozzle are reported. A small computational domain covering the orifice, pin tip and the region where primary atomization occurs is selected for numerical analysis. The governing equations are selected in three dimensional cartesian form and simulations are performed to predict the dynamics of water jet impinging on the pin. Systematic studies were carried out and the results leading to the choice of turbulence model and the effect of pin tip diameter are reported here. Further studies are proposed to show the future directions of the present research work.

Top-nozzle mounted replacement guide pin assemblies

International Nuclear Information System (INIS)

Gilmore, C.B.; Andrews, W.H.

1993-01-01

A replacement guide pin assembly is provided for aligning a nuclear fuel assembly with an upper core plate of a nuclear reactor core. The guide pin assembly includes a guide pin body having a radially expandable base insertable within a hole in the top nozzle, a ferrule insertable within the guide pin base and capable of imparting a radially and outwardly directed force on the expandable base to expand it within the hole of the top nozzle and thereby secure the guide pin body to the top nozzle in response to a predetermined displacement of the ferrule relative to the guide pin body along its longitudinal axis, and a lock screw interfitted with the ferrule and threaded into the guide pin body so as to produce the predetermined displacement of the ferrule. (author)

Calibration of the OPAL jet chamber with UV laser beams. Measurement of the beam position with position-sensitive silicon diodes (PSD)

International Nuclear Information System (INIS)

Koch, J.

1990-03-01

The OPAL jet chamber is calibrated with tracks produced by UV laser beams. Lateral effect diodes are used for monitoring the laser beam location in the detector. These position sensitive detectors locate the point of impact in two dimensions by the charge division method. Measurements on several diodes were carried out in order to calibrate these devices and to investigate to observed pin-cushion distortion. Using the telegraphers equation suitable expressions were obtained for describing the observed behaviour. It was shown that the magnetic field of OPAL as well as the UV laser wavelength and puls duration had no influence on the position information. (orig.)

Mode of failure of LMFBR fuel pins

International Nuclear Information System (INIS)

Washburn, D.F.

1975-01-01

The objectives of the irradiation test described were to evaluate mixed-oxide fuel performance and to confirm the design adequacy of the FFTF fuel pins. After attainment of the initial objectives the irradiation of several of the original fuel pins was continued until a cladding breach occurred. The consequences of a cladding breach were evaluated by reconstituting the original 37-pin subassembly into two 19-pin subassemblies after a burnup at 50,000 MWd/MTM (5.2 a/o). The original pins were supplemented with fresh pins as necessary. Irradiation of the subassemblies was continued until a cladding breach occurred. Results are presented and discussed

Improving tribological and anti-bacterial properties of titanium external fixation pins through surface ceramic conversion.

Science.gov (United States)

Dong, Huan; Mukinay, Tatiana; Li, Maojun; Hood, Richard; Soo, Sein Leung; Cockshott, Simon; Sammons, Rachel; Li, Xiaoying

2017-01-01

In this study, an advanced ceramic conversion surface engineering technology has been applied for the first time to self-drilling Ti6Al4V external fixation pins to improve their performance in terms of biomechanical, bio-tribological and antibacterial properties. Systematic characterisation of the ceramic conversion treated Ti pins was carried out using Scanning electron microscope, X-ray diffraction, Glow-discharge optical emission spectroscopy, nano- and micro-indentation and scratching; the biomechanical and bio-tribological properties of the surface engineered Ti pins were evaluated by insertion into high density bone simulation material; and the antibacterial behaviour was assessed with Staphylococcus aureus NCTC 6571. The experimental results have demonstrated that the surfaces of Ti6Al4V external fixation pins were successfully converted into a TiO 2 rutile layer (~2 μm in thickness) supported by an oxygen hardened case (~15 μm in thickness) with very good bonding due to the in-situ conversion nature. The maximum insertion force and temperature were reduced from 192N and 31.2 °C when using the untreated pins to 182N and 26.1 °C when the ceramic conversion treated pins were tested. This is mainly due to the significantly increased hardness (more than three times) and the effectively enhanced wear resistance of the cutting edge of the self-drilling Ti pins following the ceramic conversion treatment. The antibacterial tests also revealed that there was a significantly reduced number of bacteria isolated from the ceramic conversion treated pins compared to the untreated pins of around 50 % after 20 h incubation, P < 0.01 (0.0024). The results reported are encouraging and could pave the way towards high-performance anti-bacterial titanium external fixation pins with reduced pin-track infection and pin loosing.

CMOS Imaging of Pin-Printed Xerogel-Based Luminescent Sensor Microarrays.

Science.gov (United States)

Yao, Lei; Yung, Ka Yi; Khan, Rifat; Chodavarapu, Vamsy P; Bright, Frank V

2010-12-01

We present the design and implementation of a luminescence-based miniaturized multisensor system using pin-printed xerogel materials which act as host media for chemical recognition elements. We developed a CMOS imager integrated circuit (IC) to image the luminescence response of the xerogel-based sensor array. The imager IC uses a 26 × 20 (520 elements) array of active pixel sensors and each active pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. The imager includes a correlated double sampling circuit and pixel address/digital control circuit; the image data is read-out as coded serial signal. The sensor system uses a light-emitting diode (LED) to excite the target analyte responsive luminophores doped within discrete xerogel-based sensor elements. As a prototype, we developed a 4 × 4 (16 elements) array of oxygen (O 2 ) sensors. Each group of 4 sensor elements in the array (arranged in a row) is designed to provide a different and specific sensitivity to the target gaseous O 2 concentration. This property of multiple sensitivities is achieved by using a strategic mix of two oxygen sensitive luminophores ([Ru(dpp) 3 ] 2+ and ([Ru(bpy) 3 ] 2+ ) in each pin-printed xerogel sensor element. The CMOS imager consumes an average power of 8 mW operating at 1 kHz sampling frequency driven at 5 V. The developed prototype system demonstrates a low cost and miniaturized luminescence multisensor system.

BARS - a heterogeneous code for 3D pin-by-pin LWR steady-state and transient calculation

International Nuclear Information System (INIS)

Avvakumov, A.V.; Malofeev, V.M.

2000-01-01

A 3D pin-by-pin dynamic model for LWR detailed calculation was developed. The model is based on a coupling of the BARS neutronic code with the RELAP5/MOD3.2 thermal hydraulic code. This model is intended to calculate a fuel cycle, a xenon transient, and a wide range of reactivity initiated accidents in a WWER and a PWR. Galanin-Feinberg heterogeneous method was realized in the BARS code. Some results for a validation of the heterogeneous method are presented for reactivity coefficients, a pin-by-pin power distribution, and a fast pulse transient. (Authors)

Temperature and pinning strength dependence of the critical current of a superconductor with a square periodic array of pinning sites

International Nuclear Information System (INIS)

Benkraouda, M.; Obaidat, I.M.; Al Khawaja, U.

2006-01-01

We have conducted extensive series of molecular dynamic simulations on driven vortex lattices interacting with periodic square arrays of pinning sites. In solving the over damped equation of vortex motion we took into account the vortex-vortex repulsion interaction, the attractive vortex-pinning interaction, and the driving Lorentz force at several values of temperature. We have studied the effect of varying the driving Lorentz force and varying the pinning strength on the critical current for several pinning densities, and temperature values. We have found that the pinning strength play an important role in enhancing the critical current over the whole temperature range. At low temperatures, the critical current was found to increase linearly with increasing the pinning strengths for all pinning densities. As the temperature increases, the effect of small pinning strengths diminishes and becomes insignificant at high temperatures

Advanced disassembling technique of irradiated driver fuel assembly for continuous irradiation of fuel pins

International Nuclear Information System (INIS)

Ichikawa, Shoichi; Haga, Hiroyuki; Katsuyama, Kozo; Maeda, Koji; Nishinoiri, Kenji

2012-01-01

It was necessary to carry out continuous irradiation tests in order to obtain the irradiation data of high burn-up fuel and high neutron dose material for FaCT (Fast Reactor Cycle Technology Development) project. There, the disassembling technique of an irradiated fuel assembly was advanced in order to realize further continuous irradiation tests. Although the conventional disassembling technique had been cutting a lower end-plug of a fuel pin needed to fix fuel pins to an irradiation vehicle, the advanced disassembling technique did not need cutting a lower end-plug. As a result, it was possible to supply many irradiated fuel pins to various continuous irradiation tests for FaCT project. (author)

Pinning synchronization of a mobile agent network

International Nuclear Information System (INIS)

Wang, Lei; Sun, You-xian

2009-01-01

We investigate the problem of controlling a group of mobile agents in a plane in order to move them towards a desired orbit via pinning control, in which each agent is associated with a chaotic oscillator coupled with those of neighboring agents, and the pinning strategy is to have the common linear feedback acting on a small fraction of agents by random selection. We explore the effects of the pinning probability, feedback gains and agent density in the pinning synchronization of a mobile agent network under a fast-switching constraint, and perform numerical simulations for validation. In particular, we show that there exists a critical pinning density for network synchronization with an unbounded region: above the threshold, the dynamical network can be controlled by pinning; below it, anarchy prevails. And for the network with a single bounded synchronization region, pinning control has little effect as regards enhancing network synchronizability

Vortex lattice melting, pinning and kinetics

International Nuclear Information System (INIS)

Doniach, S.; Ryu, S.; Kapitulnik, A.

1994-01-01

The phenomenology of the high T c superconductors is discussed both at the level of the thermodynamics of melting of the Abrikosov flux lattice and in terms of the melting and kinetics of the flux lattice for a pinned system. The authors review results on 3D melting obtained by a Monte Carlo simulation approach in which the 2D open-quotes pancakeclose quotes vortices are treated as statistical variables. The authors discuss pinning in the context of the strong pinning regime in which the vortex density given in terms of the applied field B is small compared to that represented by an effective field B pin measuring the pinning center density. The authors introduce a new criterion for the unfreezing of a vortex glass on increase of magnetic field or temperature, in the strong pinning, small field unit. The authors model this limit in terms of a single flux line interacting with a columnar pin. This model is studied both analytically and by computer simulation. By applying a tilt potential, the authors study the kinetics of the vortex motion in an external current and show that the resulting current-voltage characteristic follows a basic vortex glass-like scaling relation in the vicinity of the depinning transition

Pin fin compliant heat sink with enhanced flexibility

Science.gov (United States)

Schultz, Mark D.

2018-04-10

Heat sinks and methods of using the same include a top and bottom plate, at least one of which has a plurality of pin contacts flexibly connected to one another, where the plurality of pin contacts have vertical and lateral flexibility with respect to one another; and pin slice layers, each having multiple pin slices, arranged vertically between the top and bottom plates such that the plurality of pin slices form substantially vertical pins connecting the top and bottom plates.

Laser semiconductor diode integrated with frequency doubler

International Nuclear Information System (INIS)

Tighineanu, I.; Dorogan, V.; Suruceanu, G.

2003-01-01

The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

Multilevel parallel strategy on Monte Carlo particle transport for the large-scale full-core pin-by-pin simulations

International Nuclear Information System (INIS)

Zhang, B.; Li, G.; Wang, W.; Shangguan, D.; Deng, L.

2015-01-01

This paper introduces the Strategy of multilevel hybrid parallelism of JCOGIN Infrastructure on Monte Carlo Particle Transport for the large-scale full-core pin-by-pin simulations. The particle parallelism, domain decomposition parallelism and MPI/OpenMP parallelism are designed and implemented. By the testing, JMCT presents the parallel scalability of JCOGIN, which reaches the parallel efficiency 80% on 120,000 cores for the pin-by-pin computation of the BEAVRS benchmark. (author)

Development of 3D pseudo pin-by-pin calculation methodology in ANC

International Nuclear Information System (INIS)

Zhang, B.; Mayhue, L.; Huria, H.; Ivanov, B.

2012-01-01

Advanced cores and fuel assembly designs have been developed to improve operational flexibility, economic performance and further enhance safety features of nuclear power plants. The simulation of these new designs, along with strong heterogeneous fuel loading, have brought new challenges to the reactor physics methodologies currently employed in the industrial codes for core analyses. Control rod insertion during normal operation is one operational feature in the AP1000 R plant of Westinghouse next generation Pressurized Water Reactor (PWR) design. This design improves its operational flexibility and efficiency but significantly challenges the conventional reactor physics methods, especially in pin power calculations. The mixture loading of fuel assemblies with significant neutron spectrums causes a strong interaction between different fuel assembly types that is not fully captured with the current core design codes. To overcome the weaknesses of the conventional methods, Westinghouse has developed a state-of-the-art 3D Pin-by-Pin Calculation Methodology (P3C) and successfully implemented in the Westinghouse core design code ANC. The new methodology has been qualified and licensed for pin power prediction. The 3D P3C methodology along with its application and validation will be discussed in the paper. (authors)

Proto-I switching and diode studies

International Nuclear Information System (INIS)

Prestwich, K.R.; Miller, P.A.; McDaniel, D.H.; Poukey, J.W.; Widner, M.M.; Goldstein, S.A.

1975-01-01

Proto-I is a 3 MV, 800 kA, 24 ns electron beam accelerator that is under development at Sandia Laboratories. It represents an initial effort to develop a scalable technology that is applicable to accelerators for electron beam driven, inertial confinement fusion studies. Energy is supplied to each of the two diodes from six oil-dielectric Blumlein transmission lines (PFL) operating in parallel. A Marx generator charges three intermediate storage, water-dielectric capacitors which subsequently transfer the stored energy to the PFL. The discharge of the PFL is initiated by the simultaneous closure of 12 triggered oil-dielectric rail switches. Data will be presented on the operation of these multichannel switches. The two diodes have a common anode. Cathode diameters can be varied from 10 to 60 cm. Results of initial diode experiments and comparisons with theory are discussed. Plasma filled diode experiments are also reported, indicating pinch collapse velocities in excess of 10 9 cm/s

Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

Science.gov (United States)

Wang, Xiao-Feng; Shao, Zhen-Guang; Chen, Dun-Jun; Lu, Hai; Zhang, Rong; Zheng, You-Dou

2014-05-01

We fabricate two Ni/Au-In0.17Al0.83N/AlN/GaN Schottky diodes on substrates of sapphire and Si, respectively, and investigate their forward-bias current transport mechanisms by temperature-dependent current-voltage measurements. In the temperature range of 300-485 K, the Schottky barrier heights (SBHs) calculated by using the conventional thermionic-emission (TE) model are strongly positively dependent on temperature, which is in contrast to the negative-temperature-dependent characteristic of traditional semiconductor Schottky diodes. By fitting the forward-bias I-V characteristics using different current transport models, we find that the tunneling current model can describe generally the I-V behaviors in the entire measured range of temperature. Under the high forward bias, the traditional TE mechanism also gives a good fit to the measured I-V data, and the actual barrier heights calculated according to the fitting TE curve are 1.434 and 1.413 eV at 300K for InAlN/AlN/GaN Schottky diodes on Si and the sapphire substrate, respectively, and the barrier height shows a slightly negative temperature coefficient. In addition, a formula is given to estimate SBHs of Ni/Au—InAlN/AlN/GaN Schottky diodes taking the Fermi-level pinning effect into account.

Integral Fast Reactor fuel pin processor

International Nuclear Information System (INIS)

Levinskas, D.

1993-01-01

This report discusses the pin processor which receives metal alloy pins cast from recycled Integral Fast Reactor (IFR) fuel and prepares them for assembly into new IFR fuel elements. Either full length as-cast or precut pins are fed to the machine from a magazine, cut if necessary, and measured for length, weight, diameter and deviation from straightness. Accepted pins are loaded into cladding jackets located in a magazine, while rejects and cutting scraps are separated into trays. The magazines, trays, and the individual modules that perform the different machine functions are assembled and removed using remote manipulators and master-slaves

Magnetic pinning in superconductor-ferromagnet multilayers

International Nuclear Information System (INIS)

Bulaevskii, L. N.; Chudnovsky, E. M.; Maley, M. P.

2000-01-01

We argue that superconductor/ferromagnet multilayers of nanoscale period should exhibit strong pinning of vortices by the magnetic domain structure in magnetic fields below the coercive field when ferromagnetic layers exhibit strong perpendicular magnetic anisotropy. The estimated maximum magnetic pinning energy for single vortex in such a system is about 100 times larger than the pinning energy by columnar defects. This pinning energy may provide critical currents as high as 10 6 -10 7 A/cm 2 at high temperatures (but not very close to T c ) at least in magnetic fields below 0.1 T. (c) 2000 American Institute of Physics

Characterisation of different hole transport materials as used in organic p-i-n solar cells

Energy Technology Data Exchange (ETDEWEB)

Pfuetzner, Steffen; Petrich, Annette; Koch, Maik; Riede, Moritz; Leo, Karl [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden (Germany); Malbrich, Christine [Leibniz-Institut fuer Festkoerper- und Werkstoffforschung, Dresden (Germany); Hildebrandt, Dirk; Pfeiffer, Martin [Heliatek GmbH, Dresden (Germany)

2008-07-01

This work focuses on the replacement of hole transport material MeO-TPD, which has been used so far in organic p-i-n- solar cells despite its has unfavourable behaviour at elevated temperatures. For this reason, different characterisation and investigations of the hole transport materials PV-TPD, PV-TPDoM, Di-NPB and MeO-Spiro-TPD were done, i.e. dopability, hole mobility, absorption, reflection, cyclic voltametry and glass transition temperature were measured. With simplified structures, e.g. m-i-p diodes, and simplified solar cells, consisting of the blue absorbing fullerene C{sub 60} as acceptor and the transparent donor material 4P-TPD, further specific material properties were determined.

Cesium chemistry in GCFR fuel pins

International Nuclear Information System (INIS)

Fee, D.C.; Johnson, C.E.

1979-01-01

The fuel rod design for the Gas Cooled Fast-Breeder Reactor (GCFR) is similar to that employed for the Liquid Metal Fast Breeder Reactor (LMFBR) with the exception of the unique features inherent to the use of helium as the coolant. These unique design features include the use of (1) vented and pressure-equalized fuel rods, and (2) ribbed cladding along 75% of the fuel section. The former design feature enables reduction in cladding thickness and prevention of possible creep collapse of the cladding due to the high coolant pressure (8.5 MPa). The latter design feature brings about improved heat transfer characteristics. Each GCFR fuel rod is vented to a manifold whereby gaseous fission products diffusing out of the fuel pin are retained on charcoal traps. As a result, the internal pressure of a GCFR fuel pin does not increase during irradiation. In addition, the venting system also maintains the pressure within the fuel pin slightly below (0.3 to 0.5 MPa) the coolant pressure outside the fuel pin. Consequently, should a breach occur in the cladding, helium flows into the breached fuel pin thereby minimizing fission product contamination of the coolant. These desirable aspects of a GCFR fuel pin can be maintained only as long as axial gas transport paths are available and operating within the fuel pin

FABRICE process for the refrabrication of experimental pins in a hot cell, from pins pre-irradiated in power reactors

International Nuclear Information System (INIS)

Vignesoult, N.; Atabek, R.; Ducas, S.

1982-06-01

The Fabrice ''hot cell refabrication'' process for small pins from very long irradiated fuel elements was developed at the CEA to allow parametric studies of the irradiation behavior of pins from nuclear power plants. Since this operation required complete assurance of the validity of the process, qualification of the fabrication was performed on test pins, refabricated in the hot cell, as well as irradiation qualification. The latter qualification was intended to demonstrate that, in identical experimental irradiation conditions, the refabricated Fabrice pins behaved in the same way as whole pins with the same initial characteristics. This qualification of the Fabrice process, dealing with more than twenty pins at different burnups, showed that fabrication did not alter: the inherent characteristics of the sampled fuel element and the irradiation behavior of the sampled fuel element [fr

A pinning puzzle: two similar, non-superconducting chemical deposits in YBCO-one pins, the other does not

Energy Technology Data Exchange (ETDEWEB)

Sawh, Ravi-Persad; Weinstein, Roy; Gandini, Alberto; Skorpenske, Harley; Parks, Drew, E-mail: Weinstein@uh.ed [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Department of Physics, University of Houston, Houston, TX 77204-5005 (United States); Texas Center for Superconductivity at UH, University of Houston, Houston, TX 77204-5002 (United States)

2009-09-15

The pinning effects of two kinds of U-rich deposits in YBCO (YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}) are compared. One is a five-element compound, (U{sub 0.6}Pt{sub 0.4})YBa{sub 2}O{sub 6}, which is a paramagnetic double perovskite which forms as profuse stable nanosize deposits, and pins very well. The other is a four-element compound, (U{sub 0.4}Y{sub 0.6})BaO{sub 3}, which is a ferromagnetic single perovskite which forms as profuse stable nanosize deposits and pins very weakly or not at all. The pinning comparison is done with nearly equal deposit sizes and number of deposits per unit volume for the two compounds. Evidence for the pinning capability, chemical makeup, x-ray diffraction signature, and magnetic properties of the two compounds is reported.

Tapered leaf support pin for operating plant guide tubes

International Nuclear Information System (INIS)

Land, J.T.; Hopkins, R.J.; Ford, D.E.

1991-01-01

This patent describes a mounting system for removably mounting the lower flange of a control rod guide tube over an opening in the upper core plate of a nuclear reactor comprising at least one elongated support pin mounted on the guide tube lower flange and resiliently receivable in a bore formed in the upper core plate. It comprises a support pin having a longitudinal axis and comprising a first pin portion mountable on the guide tube lower flange, and a second pin portion receivable within the upper core plate bore, the second pin portion including a solid body section adjacent the first pin portion and having an outer diameter which is accommodated by the bore by a close clearance fit; locking means mounted on the first pin portion of the support pin for retaining the guide tube lower flange between the solid body section of the second pin portion and the locking means; and a washer disposed around the first pin portion between the locking means and the control rod guide tube flange, the washer and the locking means including mutually engaging rounded surfaces for eliminating bending moments and stresses on the support pin during mounting of the locking means on the first pin portion of the support pin

Magnetic pinning in superconductor-ferromagnet multilayers

Energy Technology Data Exchange (ETDEWEB)

Bulaevskii, L. N. [Department of Physics and Astronomy, CUNY Lehman College 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Chudnovsky, E. M. [Department of Physics and Astronomy, CUNY Lehman College, 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Maley, M. P. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

2000-05-01

We argue that superconductor/ferromagnet multilayers of nanoscale period should exhibit strong pinning of vortices by the magnetic domain structure in magnetic fields below the coercive field when ferromagnetic layers exhibit strong perpendicular magnetic anisotropy. The estimated maximum magnetic pinning energy for single vortex in such a system is about 100 times larger than the pinning energy by columnar defects. This pinning energy may provide critical currents as high as 10{sup 6}-10{sup 7} A/cm{sup 2} at high temperatures (but not very close to T{sub c}) at least in magnetic fields below 0.1 T. (c) 2000 American Institute of Physics.

Transverse pinning versus intramedullary pinning in fifth metacarpal's neck fractures: A randomized controlled study with patient-reported outcome.

Science.gov (United States)

Galal, Sherif; Safwat, Wael

2017-01-01

The 5th metacarpal fractures accounts for 38% of all hand fractures given that the neck is the weakest point in metacarpals, so neck fracture is the most common metacarpal fracture. Surgical fixation is also advocated for such fractures to prevent mal-rotation of the little finger which will lead to fingers overlap in a clenched fist. Various methods are available for fixation of such fractures, like intramedullary & transverse pinning. There are very few reports in the literature comparing both techniques. Authors wanted to compare outcomes and complications of transverse pinning versus intramedullary pinning in fifth metacarpal's neck fractures. A single-center, parallel group, prospective, randomized study was conducted at an academic Level 1 Trauma Center from October 2014 to December 2016. A total of 80 patients with 5th metacarpal's neck fractures were randomized to pinning using either transverse pinning (group A) or intramedullary pinning (group B). Patients were assessed clinically on range of motion, patient-reported outcome using the Quick-DASH (Disabilities of the Arm, Shoulder, and Hand) questionnaire & radiographically. Two blinded observers assessed outcomes. At final follow up for each patient (12 months) the statistically significant differences were observed in operative time, the transverse pinning group showed shorter operative time, as well as complication rate as complications were observed only in intramedullary pinning group. No differences were found in range of motion or the Quick -DASH score. Both techniques are equally safe and effective treatment option for 5th metacarpal's neck fractures. The only difference was shorter operative time & less incidence of complications in transverse pinning group. Level II, Therapeutic study.

Transient survivability of LMR oxide fuel pins

International Nuclear Information System (INIS)

Weber, E.T.; Pitner, A.L.; Bard, F.E.; Culley, G.E.; Hunter, C.W.

1986-01-01

Fuel pin integrity during transient events must be assessed for both the core design and safety analysis phases of a reactor project. A significant increase in the experience related to limits of integrity for oxide fuel pins in transient overpower events has been realized from testing of fuel pins irradiated in FFTF and PFR. Fourteen FFTF irradiated fuel pins were tested in TREAT, representing a range of burnups, overpower ramp rates and maximum overpower conditions. Results of these tests along with similar testing in the PFR/TREAT program, provide a demonstration of significant safety margins for oxide fuel pins. Useful information applied in analytical extrapolation of fuel pin test data have been developed from laboratory transient tests on irradiated fuel cladding (FCTT) and on unirradiated fuel pellet deformation. These refinements in oxide fuel transient performance are being applied in assessment of transient capabilities of long lifetime fuel designs using ferritic cladding

Lightning Pin Injection Testing on MOSFETS

Science.gov (United States)

Ely, Jay J.; Nguyen, Truong X.; Szatkowski, George N.; Koppen, Sandra V.; Mielnik, John J.; Vaughan, Roger K.; Wysocki, Philip F.; Celaya, Jose R.; Saha, Sankalita

2009-01-01

Lightning transients were pin-injected into metal-oxide-semiconductor field-effect transistors (MOSFETs) to induce fault modes. This report documents the test process and results, and provides a basis for subsequent lightning tests. MOSFETs may be present in DC-DC power supplies and electromechanical actuator circuits that may be used on board aircraft. Results show that unprotected MOSFET Gates are susceptible to failure, even when installed in systems in well-shielded and partial-shielded locations. MOSFET Drains and Sources are significantly less susceptible. Device impedance decreased (current increased) after every failure. Such a failure mode may lead to cascading failures, as the damaged MOSFET may allow excessive current to flow through other circuitry. Preliminary assessments on a MOSFET subjected to 20-stroke pin-injection testing demonstrate that Breakdown Voltage, Leakage Current and Threshold Voltage characteristics show damage, while the device continues to meet manufacturer performance specifications. The purpose of this research is to develop validated tools, technologies, and techniques for automated detection, diagnosis and prognosis that enable mitigation of adverse events during flight, such as from lightning transients; and to understand the interplay between lightning-induced surges and aging (i.e. humidity, vibration thermal stress, etc.) on component degradation.

Probabilistic distributions of pin gaps within a wire-spaced fuel subassembly and sensitivities of the related uncertainties to pin gap

International Nuclear Information System (INIS)

Sakai, K.; Hishida, H.

1978-01-01

Probabilistic fuel pin gap distributions within a wire-spaced fuel subassembly and sensitivities of the related uncertainties to fuel pin gaps are discussed. The analyses consist mainly of expressing a local fuel pin gap in terms of sensitivity functions of the related uncertainties and calculating the corresponding probabilistic distribution through taking all the possible combinations of the distribution of uncertainties. The results of illustrative calculations show that with the reliability level of 0.9987, the maximum deviation of the pin gap at the cladding hot spot of a center fuel subassembly is 8.05% from its nominal value and the corresponding probabilistic pin gap distribution is shifted to the narrower side due to the external confinement of a pin bundle with a wrapper tube. (Auth.)

Cesium migration in LMFBR fuel pins

International Nuclear Information System (INIS)

Karnesky, R.A.; Jost, J.W.; Stone, I.Z.

1978-10-01

The factors affecting the axial migration of cesium in mixed oxide fuel pins and the effects of cesium migration on fuel pin performance are examined. The development and application of a correlated model which will predict the occurrence of cesium migration in a mixed oxide (75 w/o UO 2 + 25 w/o PuO 2 ) fuel pins over a wide range of fabrication and irradiation conditions are described

Automated fuel pin loading system

Science.gov (United States)

Christiansen, D.W.; Brown, W.F.; Steffen, J.M.

An automated loading system for nuclear reactor fuel elements utilizes a gravity feed conveyor which permits individual fuel pins to roll along a constrained path perpendicular to their respective lengths. The individual lengths of fuel cladding are directed onto movable transports, where they are aligned coaxially with the axes of associated handling equipment at appropriate production stations. Each fuel pin can be be reciprocated axially and/or rotated about its axis as required during handling steps. The fuel pins are inerted as a batch prior to welding of end caps by one of two disclosed welding systems.

Overexpression of PvPin1, a Bamboo Homolog of PIN1-Type Parvulin 1, Delays Flowering Time in Transgenic Arabidopsis and Rice

Directory of Open Access Journals (Sweden)

Zhigang Zheng

2017-09-01

Full Text Available Because of the long and unpredictable flowering period in bamboo, the molecular mechanism of bamboo flowering is unclear. Recent study showed that Arabidopsis PIN1-type parvulin 1 (Pin1At is an important floral activator and regulates floral transition by facilitating the cis/trans isomerization of the phosphorylated Ser/Thr residues preceding proline motifs in suppressor of overexpression of CO 1 (SOC1 and agamous-like 24 (AGL24. Whether bamboo has a Pin1 homolog and whether it works in bamboo flowering are still unknown. In this study, we cloned PvPin1, a homolog of Pin1At, from Phyllostachys violascens (Bambusoideae. Bioinformatics analysis showed that PvPin1 is closely related to Pin1-like proteins in monocots. PvPin1 was widely expressed in all tested bamboo tissues, with the highest expression in young leaf and lowest in floral bud. Moreover, PvPin1 expression was high in leaves before bamboo flowering then declined during flower development. Overexpression of PvPin1 significantly delayed flowering time by downregulating SOC1 and AGL24 expression in Arabidopsis under greenhouse conditions and conferred a significantly late flowering phenotype by upregulating OsMADS56 in rice under field conditions. PvPin1 showed subcellular localization in both the nucleus and cytolemma. The 1500-bp sequence of the PvPin1 promoter was cloned, and cis-acting element prediction showed that ABRE and TGACG-motif elements, which responded to abscisic acid (ABA and methyl jasmonate (MeJA, respectively, were characteristic of P. violascens in comparison with Arabidopsis. On promoter activity analysis, exogenous ABA and MeJA could significantly inhibit PvPin1 expression. These findings suggested that PvPin1 may be a repressor in flowering, and its delay of flowering time could be regulated by ABA and MeJA in bamboo.

Overexpression of PvPin1, a Bamboo Homolog of PIN1-Type Parvulin 1, Delays Flowering Time in Transgenic Arabidopsis and Rice.

Science.gov (United States)

Zheng, Zhigang; Yang, Xiaoming; Fu, Yaping; Zhu, Longfei; Wei, Hantian; Lin, Xinchun

2017-01-01

Because of the long and unpredictable flowering period in bamboo, the molecular mechanism of bamboo flowering is unclear. Recent study showed that Arabidopsis PIN1-type parvulin 1 (Pin1At) is an important floral activator and regulates floral transition by facilitating the cis/trans isomerization of the phosphorylated Ser/Thr residues preceding proline motifs in suppressor of overexpression of CO 1 (SOC1) and agamous-like 24 (AGL24). Whether bamboo has a Pin1 homolog and whether it works in bamboo flowering are still unknown. In this study, we cloned PvPin1 , a homolog of Pin1At , from Phyllostachys violascens (Bambusoideae). Bioinformatics analysis showed that PvPin1 is closely related to Pin1-like proteins in monocots. PvPin1 was widely expressed in all tested bamboo tissues, with the highest expression in young leaf and lowest in floral bud. Moreover, PvPin1 expression was high in leaves before bamboo flowering then declined during flower development. Overexpression of PvPin1 significantly delayed flowering time by downregulating SOC1 and AGL24 expression in Arabidopsis under greenhouse conditions and conferred a significantly late flowering phenotype by upregulating OsMADS56 in rice under field conditions. PvPin1 showed subcellular localization in both the nucleus and cytolemma. The 1500-bp sequence of the PvPin1 promoter was cloned, and cis -acting element prediction showed that ABRE and TGACG-motif elements, which responded to abscisic acid (ABA) and methyl jasmonate (MeJA), respectively, were characteristic of P. violascens in comparison with Arabidopsis . On promoter activity analysis, exogenous ABA and MeJA could significantly inhibit PvPin1 expression. These findings suggested that PvPin1 may be a repressor in flowering, and its delay of flowering time could be regulated by ABA and MeJA in bamboo.

Disruptive laser diode source for embedded LIDAR sensors

Science.gov (United States)

Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

2017-02-01

Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources

Analysis of action of device with spring pins for picking up of retted flax straw

Directory of Open Access Journals (Sweden)

V. G. Chernikov

2016-01-01

Full Text Available Weather conditions in flax cultivation areas during harvesting time can be characterized with high rainfalls, relative humidity and, in some areas, extremely low temperature. Clogging of fields with stones, grass germination through flax swaths, often an absence of homogeneity on length and thickness of straw in swaths require working out new devices for straw lifting. Existing devices for picking up do not provide a high-quality lifting of flax swaths and have a low coefficient of reliability of the process. Researches and experimental-design works were carried out to create a constructive-technological scheme of the picking up device of cylindrical type with spring-loaded rigid pins. The mathematical model of the device operation when a pin touching an obstacle. The condition of balance of the mechanism under which the pin of a cilinder will operate technological process of picking up of retted flax straw without action of the safety device (spring was described. The offered method of calculation of operation of this device was introduced in a common flax swath lifter-turners

Compact 2100 nm laser diode module for next-generation DIRCM

Science.gov (United States)

Dvinelis, Edgaras; Greibus, Mindaugas; TrinkÅ«nas, Augustinas; NaujokaitÄ--, Greta; Vizbaras, Augustinas; Vizbaras, Dominykas; Vizbaras, Kristijonas

2017-10-01

Compact high-power 2100 nm laser diode module for next-generation directional infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state and fiber laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 - 2450 nm band [1] while also maintaining very attractive size, weight, power consumption and cost characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Total 2 emitters stacked vertically were used in 2100 nm laser diode module. Final optical output power of the module goes up to 2 W at temperature of 20 °C. Total dimensions of the laser diode module are 35 x 25 x 16 mm (L x W x H) with a weight of 28 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.

Control of domain wall pinning by localised focused Ga + ion irradiation on Au capped NiFe nanowires

International Nuclear Information System (INIS)

Burn, D. M.; Atkinson, D.

2014-01-01

Understanding domain wall pinning and propagation in nanowires are important for future spintronics and nanoparticle manipulation technologies. Here, the effects of microscopic local modification of the magnetic properties, induced by focused-ion-beam intermixing, in NiFe/Au bilayer nanowires on the pinning behavior of domain walls was investigated. The effects of irradiation dose and the length of the irradiated features were investigated experimentally. The results are considered in the context of detailed quasi-static micromagnetic simulations, where the ion-induced modification was represented as a local reduction of the saturation magnetization. Simulations show that domain wall pinning behavior depends on the magnitude of the magnetization change, the length of the modified region, and the domain wall structure. Comparative analysis indicates that reduced saturation magnetisation is not solely responsible for the experimentally observed pinning behavior.

Robustness of pinning a general complex dynamical network

International Nuclear Information System (INIS)

Wang Lei; Sun Youxian

2010-01-01

This Letter studies the robustness problem of pinning a general complex dynamical network toward an assigned synchronous evolution. Several synchronization criteria are presented to guarantee the convergence of the pinning process locally and globally by construction of Lyapunov functions. In particular, if a pinning strategy has been designed for synchronization of a given complex dynamical network, then no matter what uncertainties occur among the pinned nodes, synchronization can still be guaranteed through the pinning. The analytical results show that pinning control has a certain robustness against perturbations on network architecture: adding, deleting and changing the weights of edges. Numerical simulations illustrated by scale-free complex networks verify the theoretical results above-acquired.

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

Science.gov (United States)

Lagov, P. B.; Drenin, A. S.; Zinoviev, M. A.

2017-05-01

Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding.

Pinning Mechanisms in YBCO Tapes

CERN Document Server

Spera, Marcello; Ballarino, Amalia

2015-01-01

In this thesis work, a study on flux pinning mechanisms of commercial YBCO tapes is presented. This study has been performed via critical current characterization using transport (via direct I-V curves) and magnetization (via a Vibrating Sample Magnetometer) measurements. The latter ones turned out to be better concerning the comprehension of the pinning landscape of the provided samples, as a wider range of magnetic fields and temperatures is available for those measurements in the setup I used. The comparison of the experimental data with existing theoretical models allowed me to draw a picture of the pinning mechanisms underlying in each sample, and they turned out to be quite different one another. Moreover, for high-performance research tapes, another interesting feature has been found: the counterplay between the self-field critical current and the in-field one. Very well engineered artificial pinning structures limit the self-field critical current density due to the hi...

Fuel-pin cladding transient failure strain criterion

International Nuclear Information System (INIS)

Bard, F.E.; Duncan, D.R.; Hunter, C.W.

1983-01-01

A criterion for cladding failure based on accumulated strain was developed for mixed uranium-plutonium oxide fuel pins and used to interpret the calculated strain results from failed transient fuel pin experiments conducted in the Transient Reactor Test (TREAT) facility. The new STRAIN criterion replaced a stress-based criterion that depends on the DORN parameter and that incorrectly predicted fuel pin failure for transient tested fuel pins. This paper describes the STRAIN criterion and compares its prediction with those of the stress-based criterion

Enhanced pinning in superconducting thin films with graded pinning landscapes

Science.gov (United States)

Motta, M.; Colauto, F.; Ortiz, W. A.; Fritzsche, J.; Cuppens, J.; Gillijns, W.; Moshchalkov, V. V.; Johansen, T. H.; Sanchez, A.; Silhanek, A. V.

2013-05-01

A graded distribution of antidots in superconducting a-Mo79Ge21 thin films has been investigated by magnetization and magneto-optical imaging measurements. The pinning landscape has maximum density at the sample border, decreasing linearly towards the center. Its overall performance is noticeably superior than that for a sample with uniformly distributed antidots: For high temperatures and low fields, the critical current is enhanced, whereas the region of thermomagnetic instabilities in the field-temperature diagram is significantly suppressed. These findings confirm the relevance of graded landscapes on the enhancement of pinning efficiency, as recently predicted by Misko and Nori [Phys. Rev. B 85, 184506 (2012)].

A Compact Frequency Reconfigurable Antenna for LTE Mobile Handset Applications

Directory of Open Access Journals (Sweden)

Munyong Choi

2015-01-01

Full Text Available A compact (8 × 62 × 5 mm3; 2.48 cc frequency reconfigurable antenna that uses electrical switching with PIN diodes is proposed for the low frequency LTE band (699 MHz–862 MHz, high frequency LTE band (2496 MHz–2690 MHz, GSM850/900 bands (824 MHz–960 MHz, and DCS/PCS/WCDMA bands (1710 MHz–2170 MHz. The penta-band PIFA is first designed for GSM850/900/DCS/PCS/WCDMA bands by using two slits and ground pins within a limited antenna volume (8 × 54.6 × 5 mm3; 2.18 cc. The frequency reconfigurable antenna based on this penta-band PIFA is thus proposed to additionally cover all LTE bands. The proposed antenna has two PIN diodes with an optimal location. For State 1 (PIN diode 1: ON state, PIN diode 2: OFF state, the proposed antenna covers the low frequency LTE band, DCS/PCS/WCDMA bands, and high frequency LTE band. For State 2 (PIN diode 1: OFF state, PIN diode 2: ON state, the antenna covers the GSM850/900 bands. Simulated and measured results show that the total efficiency of the proposed antenna was greater than 40% for all operating frequency bands.

Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes

CERN Document Server

Boscardin, Maurizio; Bruzzi, Mara; Candelori, Andrea; Focardi, Ettore; Khomenkov, Volodymyr P; Piemonte, Claudio; Ronchin, S; Tosi, C; Zorzi, N

2005-01-01

Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution, and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed PIN diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer backside. Diodes of different shapes and sizes have been fabricated on 50- mu m and 100- mu m thick membranes and tested, showing a low leakage current (of 300 nA/cm/sup 3/) and a very low depletion voltage (in the order of 1 V for the 50 mu m membrane) before irradiation. Radiation damage tests have been performed with 58 MeV lithium (Li) ions up to the fluence of 10/sup 14/ Li/cm/sup 2/ in order to determine the depletion voltage and leakage current density increase after irradiation. Charge collection efficiency tests carried out with a beta /...

FFTF fuel pin design bases and performance

International Nuclear Information System (INIS)

Cox, C.M.; Hanson, J.E.; Roake, W.E.; Slember, R.J.; Weber, C.E.; Millunzi, A.C.

1975-04-01

The FFTF fuel pin was conservatively designed to meet thermal and structural performance requirements in the categories normal operation, upset events, emergency events, and hypothetical, faulted events. The fuel pin operating limits consistent with these requirements were developed from a strong fuel pin irradiation testing program scoped to define the performance capability under relevant steady state and transient conditions. Comparison of the results of the irradiation testing program with design requirements indicates that the FFTF fuel pin can exceed its goal burnup of 80,000 MWd/MTM. (U.S.)

Ferromagnetic artificial pinning centers in multifilamentary superconducting wires

International Nuclear Information System (INIS)

Wang, J.Q.; Rizzo, N.D.; Prober, D.E.

1997-01-01

The authors fabricated multifilamentary NbTi wires with ferromagnetic (FM) artificial pinning centers (APCs) to enhance the critical current density (J c ) in magnetic fields. They used a bundle and draw technique to process the APC wires with either Ni or Fe as the pinning centers. Both wires produced higher J c in the high field range (5-9 T) than previous non-magnetic APC wires similarly processed, even though the authors have not yet optimized pin percentage. Using a magnetometer they found that the pins remained ferromagnetic for the wires with maximum J c . However, they did observe a substantial loss of FM material for the wires where the pin diameter approached 3 nm. Thus, they expect further enhancement of J c with better pin quality

An improved PIN photodetector with integrated JFET on high-resistivity silicon

International Nuclear Information System (INIS)

Dalla Betta, Gian-Franco; Piemonte, Claudio; Boscardin, Maurizio; Gregori, Paolo; Zorzi, Nicola; Fazzi, Alberto; Pignatel, Giorgio U.

2006-01-01

We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed

Pinning control of complex networked systems synchronization, consensus and flocking of networked systems via pinning

CERN Document Server

Su, Housheng

2013-01-01

Synchronization, consensus and flocking are ubiquitous requirements in networked systems. Pinning Control of Complex Networked Systems investigates these requirements by using the pinning control strategy, which aims to control the whole dynamical network with huge numbers of nodes by imposing controllers for only a fraction of the nodes. As the direct control of every node in a dynamical network with huge numbers of nodes might be impossible or unnecessary, it’s then very important to use the pinning control strategy for the synchronization of complex dynamical networks. The research on pinning control strategy in consensus and flocking of multi-agent systems can not only help us to better understand the mechanisms of natural collective phenomena, but also benefit applications in mobile sensor/robot networks. This book offers a valuable resource for researchers and engineers working in the fields of control theory and control engineering.   Housheng Su is an Associate Professor at the Department of Contro...

MODELING OF MANUFACTURING ERRORS FOR PIN-GEAR ELEMENTS OF PLANETARY GEARBOX

Directory of Open Access Journals (Sweden)

Ivan M. Egorov

2014-11-01

Full Text Available Theoretical background for calculation of k-h-v type cycloid reducers was developed relatively long ago. However, recently the matters of cycloid reducer design again attracted heightened attention. The reason for that is that such devices are used in many complex engineering systems, particularly, in mechatronic and robotics systems. The development of advanced technological capabilities for manufacturing of such reducers today gives the possibility for implementation of essential features of such devices: high efficiency, high gear ratio, kinematic accuracy and smooth motion. The presence of an adequate mathematical model gives the possibility for adjusting kinematic accuracy of the reducer by rational selection of manufacturing tolerances for its parts. This makes it possible to automate the design process for cycloid reducers with account of various factors including technological ones. A mathematical model and mathematical technique have been developed giving the possibility for modeling the kinematic error of the reducer with account of multiple factors, including manufacturing errors. The errors are considered in the way convenient for prediction of kinematic accuracy early at the manufacturing stage according to the results of reducer parts measurement on coordinate measuring machines. During the modeling, the wheel manufacturing errors are determined by the eccentricity and radius deviation of the pin tooth centers circle, and the deviation between the pin tooth axes positions and the centers circle. The satellite manufacturing errors are determined by the satellite eccentricity deviation and the satellite rim eccentricity. Due to the collinearity, the pin tooth and pin tooth hole diameter errors and the satellite tooth profile errors for a designated contact point are integrated into one deviation. Software implementation of the model makes it possible to estimate the pointed errors influence on satellite rotation angle error and

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

International Nuclear Information System (INIS)

Lagov, P B; Drenin, A S; Zinoviev, M A

2017-01-01

Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding. (paper)

Active graphene-silicon hybrid diode for terahertz waves.

Science.gov (United States)

Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

2015-05-11

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

Steady-state thermohydraulic studies in seven-pin bundle out-of-pile experiments: nominal and distorted geometry tests

International Nuclear Information System (INIS)

Falzetti, L.; Meneghello, S.; Pezzilli, M.

1979-01-01

Two sets of experiments have been performed in sodium with two seven pin electrically heated bundles: the first with a nominal arrangement, the second with one dummy pin enlarged 20% in diameter in peripheral position. In this paper a rapid review of experimental results and theoretical works, related to the temperature distribution in these geometries, is presented together with a short description of the developed test section technology

The PIN1 family gene PvPIN1 is involved in auxin-dependent root emergence and tillering in switchgrass

Directory of Open Access Journals (Sweden)

Kaijie Xu

2016-03-01

Full Text Available Abstract Switchgrass (Panicum virgatum L.; family Poaceae is a warm-season C4 perennial grass. Tillering plays an important role in determining the morphology of aboveground parts and the final biomass yield of switchgrass. Auxin distribution in plants can affect a variety of important growth and developmental processes, including the regulation of shoot and root branching, plant resistance and biological yield. Auxin transport and gradients in plants are mediated by influx and efflux carriers. PvPIN1, a switchgrass PIN1-like gene that is involved in regulating polar transport, is a putative auxin efflux carrier. Neighbor-joining analysis using sequences deposited in NCBI databases showed that the PvPIN1gene belongs to the PIN1 family and is evolutionarily closer to the Oryza sativa japonica group. Tiller emergence and development was significantly promoted in plants subjected toPvPIN1 RNA interference (RNAi, which yielded a phenotype similar to that of wild-type plants treated with the auxin transport inhibitor TIBA (2,3,5-triiodobenzoic acid. A transgenic approach that inducedPvPIN1 gene overexpression or suppression altered tiller number and the shoot/root ratio. These data suggest that PvPIN1plays an important role in auxin-dependent adventitious root emergence and tillering.

WWER-440 fuel rod performance analysis with PIN-Micro and TRANSURANUS codes

International Nuclear Information System (INIS)

Vitkova, M.; Manolova, M.; Stefanova, S.; Simeonova, V.; Passage, G.; Lassmann, K.

1994-01-01

PIN-micro and TRANSURANUS codes were used to analyse the WWER-440 fuel rod behaviour at normal operation conditions. Two highest loaded fuel rods of the fuel assemblies irradiated in WWER-440 with different power histories were selected. A set of the most probable average values of all geometrical and technological parameters were used. A comparison between PIN-micro and TRANSURANUS codes was performed using identical input data. The results for inner gas pressure, gap size, local linear heat rate, fuel central temperature and fission gas release as a function of time calculated for the selected fuel rods are presented. The following conclusions were drawn: 1) The PIN-micro code predicts adequately the thermal and mechanical behaviour of the two fuel rods; 2) The comparison of the results obtained by PIN-micro and TRANSURANUS shows a reasonable agreement and the discrepancies could be explained by the lack of thoroughly WWER oriented verification of TRANSURANUS; 3) The advanced TRANSURANUS code could be successfully applied for WWER fuel rod thermal and mechanical analysis after incorporation of all necessary WWER specific material properties and models for the Zr+1%Nb cladding, for the fuel rod as a whole and after validation against WWER experimental and operational data. 1 tab., 10 figs., 10 refs

WWER-440 fuel rod performance analysis with PIN-Micro and TRANSURANUS codes

Energy Technology Data Exchange (ETDEWEB)

Vitkova, M; Manolova, M; Stefanova, S; Simeonova, V; Passage, G [Bylgarska Akademiya na Naukite, Sofia (Bulgaria). Inst. za Yadrena Izsledvaniya i Yadrena Energetika; Kharalampieva, Ts [Kombinat Atomna Energetika, Kozloduj (Bulgaria); Lassmann, K [European Atomic Energy Community, Karlsruhe (Germany). European Inst. for Transuranium Elements

1994-12-31

PIN-micro and TRANSURANUS codes were used to analyse the WWER-440 fuel rod behaviour at normal operation conditions. Two highest loaded fuel rods of the fuel assemblies irradiated in WWER-440 with different power histories were selected. A set of the most probable average values of all geometrical and technological parameters were used. A comparison between PIN-micro and TRANSURANUS codes was performed using identical input data. The results for inner gas pressure, gap size, local linear heat rate, fuel central temperature and fission gas release as a function of time calculated for the selected fuel rods are presented. The following conclusions were drawn: (1) The PIN-micro code predicts adequately the thermal and mechanical behaviour of the two fuel rods; (2) The comparison of the results obtained by PIN-micro and TRANSURANUS shows a reasonable agreement and the discrepancies could be explained by the lack of thoroughly WWER oriented verification of TRANSURANUS; (3) The advanced TRANSURANUS code could be successfully applied for WWER fuel rod thermal and mechanical analysis after incorporation of all necessary WWER specific material properties and models for the Zr+1%Nb cladding, for the fuel rod as a whole and after validation against WWER experimental and operational data. 1 tab., 10 figs., 10 refs.

Investigation on Bond-Slip Behavior of Z-Pin Interfaces in X-Cor® Sandwich Structures Using Z-Pin Pull-Out Test

Science.gov (United States)

Shan, Hangying; Xiao, Jun; Chu, Qiyi

2018-05-01

The Z-Pin interfacial bond properties play an important role in the structural performance of X-Cor® sandwich structures. This paper presents an experimental investigation on bond-slip behavior of Z-Pin interfaces using Z-Pin pull-out test. Based on the experimental data the whole Z-Pin pull-out process consists of three stages: initial bonding, debonding and frictional sliding. Comparative experimental study on the influence of design parameters on bond-slip behavior of Z-Pin interfaces has also been performed. Numerical analyses were conducted with the ABAQUS finite element (FE) program to simulate the Z-Pins bond-slip response of the pull-out test. The Z-Pins interfacial bond-slip behavior was implemented using nonlinear spring elements characterized with the constitutive relation from experimental results. Numerical results were validated by comparison with experimental data, and reasonably good agreement was achieved between experimental and analytical pull-out force-slip curves.

Repeat biopsy in patients with initial diagnosis of PIN; La biopsia ripetuta nei pazienti con diagnosi iniziale di PIN

Energy Technology Data Exchange (ETDEWEB)

De Matteis, Massimo [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Radiologia Albertoni; Poggi, Cristina; De Martino, Antonietta; Pavlica, Pietro [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Radiologia Palagi, Dipartimento area radiologica; Corti, Barbara [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Anatomia ed istologia patologica, Dipartimento oncologico ed ematologico; Barozzi, Libero [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Radiologia d' urgenza, Dipartimento emergenze ed accettazione

2005-09-15

Purpose. Prostatic intra-epithelial neoplasia (PIN) is considered a pre-malignant lesion and the main precursor of invasive prostatic adenocarcinoma. A PIN diagnosis established by prostate needle biopsy poses a difficult clinical management. problem. We retrospectively reviewed our three-year experience in order to identify criteria for referring patients to repeat biopsy. Materials and methods. We reviewed the repeat biopsy records of 72 patients in whom PIN had been detected on initial US-guided needle biopsy of the prostate. All the patients had a minimum of 6 biopsy cores taken, and they all had PSA > 4 ng/ml. Results. Adenocarcinoma was detected in 15 patients out of 50 (30%) with an initial diagnosis of low-grade PIN and in 10 patients out of 22 (45.4%) with high grade PIN, in 7 out of 18 (39%) in whom PSA levels had decreased during the observation interval, in 16 patients out of 46 (35%) in whom the PSA had increased and in 2 patients out of 8 (25%) with stable PSA. Conclusions. Our results seem to confirm that PIN can be considered a precursor of prostatic adenocarcinoma or a histological alteration often associated with it. Patients with low-grade PIN and particularly those with high-grade PIN should be regularly subjected to repeat biopsy at short intervals due to the high frequency of the final diagnosis of carcinoma. No agreement has been reached on the time interval between the first and the second biopsy. The PSA changes during the observation period are not a statistically significant parameter to suggest the repetition of prostatic biopsy. [Italian] Scopo. La neoplasia prostatica intraepiteliale (PIN) e considerata una lesione premaligna ed il precursore principale dell'adenocarcinoma prostatico infiltrante. La diagnosi di PIN ottenuta con l'agobiopsia della prostata rappresenta un difficile problema gestionale clinico. In una valutazione retrospettiva della nostra esperienza di 3 anni si e cercato di individuare i criteri che possano

Vortex pinning and creep experiments

International Nuclear Information System (INIS)

Kes, P.H.

1991-01-01

A brief review of basic flux-pinning and flux-creep ingredients and a selection of experimental results on high-temperature-superconductivity compounds is presented. Emphasis is put on recent results and on those properties which are central to the emerging understanding of the flux-pinning and flux-creep mechanisms of these fascinating materials

DFB laser diodes for sensing applications using photoacoustic spectroscopy

International Nuclear Information System (INIS)

Koeth, J; Fischer, M; Legge, M; Seufert, J; Roessner, K; Groninga, H

2010-01-01

We present typical device characteristics of novel DFB laser diodes which are employed in various sensing applications including high resolution photoacoustic spectroscopy. The laser diodes discussed are based on a genuine fabrication technology which allows for the production of ultra stable devices within a broad spectral range from 760 nm up to 3000 nm wavelength. The devices exhibit narrow linewidths down to <1 MHz which makes them ideally suited for all photoacoustic sensing applications where a high spectral purity is required. As an example we will focus on a typical medical application where these diodes are used for breath analysis using photoacoustic spectroscopy.

High temperature semiconductor diode laser pumps for high energy laser applications

Science.gov (United States)

Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

2018-02-01

Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

Nuclear fuel pin controlled failure device

International Nuclear Information System (INIS)

Schlenker, L.D.

1975-01-01

Each fuel pin of a fuel assembly for a water-cooled nuclear reactor is provided with means for rupturing the cladding tube at a predetermined location if an abnormal increase in pressure of the gases present occurs due to a loss-of-coolant accident. Preferably all such rupture means are oriented to minimize the hydraulic resistance to the flow of emergency core coolant such as all rupture means pointing in the same direction. Rupture means may be disposed at different elevations in adjacent fuel pins and, further, fuel pins may be provided with two or more rupture means, one of which is in the upper portion of the fuel pin. Rupture means are mechanical as by providing a locally weakened condition of a controlled nature in the cladding. (U.S.)

The pin pixel detector--X-ray imaging

CERN Document Server

Bateman, J E; Derbyshire, G E; Duxbury, D M; Marsh, A S; Simmons, J E; Stephenson, R

2002-01-01

The development and testing of a soft X-ray gas pixel detector, which uses connector pins for the anodes is reported. Based on a commercial 100 pin connector block, a prototype detector of aperture 25.4 mm centre dot 25.4 mm can be economically fabricated. The individual pin anodes all show the expected characteristics of small gas detectors capable of counting rates reaching 1 MHz per pin. A 2-dimensional resistive divide readout system has been developed to permit the imaging properties of the detector to be explored in advance of true pixel readout electronics.

Secure Biometric Multi-Logon System Based on Current Authentication Technologies

Science.gov (United States)

Tait, Bobby L.

The need for accurate authentication in the current IT world is of utmost importance. Users rely on current IT technologies to facilitate in day to day interactions with nearly all environments. Strong authentication technologies like the various biometric technologies have been in existence for many years. Many of these technologies, for instance fingerprint biometrics, have reached maturity. However, passwords and pins are still the most commonly used authentication mechanisms at this stage. An average user has to be authenticated in various situations during daily interaction with his or her environment, by means of a pin or a password. This results in many different passwords and pins that the user has to remember. The user will eventually either start documenting these passwords and pins, or often, simply use the same password and pin for all authentication situations.

Heat transfer in a fuel pin shipping container

International Nuclear Information System (INIS)

Ingham, J.G.

1980-01-01

Maximum cladding temperatures occur when the IDENT 1578 fuel pin shipping container is installed in the T-3 Cask. The maximum allowable cladding temperature of 800 0 F is reached when the rate of energy deposited in the 19-pin basket reaches 400 watts. Since 45% of the energy which is generated in the fuel escapes the 19-pin basket without being deposited, mostly gamma energy, the maximum allowable rate of heat generation is 400/.55 = 727 watts. Similarly, the maximum allowable cladding temperature of 800 0 F is reached when the rate of energy deposited in the 40-pin basket reaches 465 watts. Since 33% of the energy which is generated in the fuel escapes the 40-pin basket without being deposited, mostly gamma energy, the maximum allowable rate of heat generation is 465/.66 = 704 watts. The IDENT 1578 fuel pin shipping container therefore meets its thermal design criteria. IDENT 1578 can handle fuel pins with a decay heat load of 600 watts while maintaining the maximum fuel pin cladding temperature below 800 0 F. The emissivities which were determined from the test results for the basket tubes and container are relatively low and correspond to new, shiny conditions. As the IDENT 1578 container is exposed to high temperatures for extended periods of time during the transportation of fuel pins, the emissivities will probably increase. This will result in reduced temperatures

QUANTITATIVE DETECTION OF ENVIRONMENTALLY IMPORTANT DYES USING DIODE LASER/FIBER-OPTIC RAMAN

Science.gov (United States)

A compact diode laser/fiber-optic Raman spectrometer is used for quantitative detection of environmentally important dyes. This system is based on diode laser excitation at 782 mm, fiber optic probe technology, an imaging spectrometer, and state-of-the-art scientific CCD camera. ...

Neutron radiography of fuel pins

International Nuclear Information System (INIS)

Jackson, C.N. Jr.; Powers, H.G.; Burgess, C.A.

1975-01-01

Neutron radiography performed with a reactor source has been shown to be a superior radiographic method for the examination of unirradiated mixed oxide fuel pins at the Hanford Engineering Development Laboratory. Approximately 1,700 fuel pins were contained in a sample that demonstrated the capability of the method for detecting laminations, structural flaws, fissile density variation, hydrogenous inclusions and voids in assembled fuel pins. The nature, extent, and importance of the detected conditions are substantiated by gamma autoradiography and by destructive analysis employing alpha autoradiography, electron microprobe and visual inspection. Also, a series of radiographs illustrate the response of neutron radiography as compared to low voltage and high voltage x-ray and gamma source Iridium 192 radiography. (U.S.)

Repetitive nanosecond electron accelerators type URT-1 for radiation technology

Science.gov (United States)

Sokovnin, S. Yu.; Balezin, M. E.

2018-03-01

The electron accelerator URT-1М-300 for mobile installation was created for radiation disinfecting to correct drawbacks that were found the URT-1M electron accelerator operation (the accelerating voltage up to 1 МV, repetition rate up to 300 pps, electron beam size 400 × 100 mm, the pulse width about 100 ns). Accelerator configuration was changed that allowed to reduce significantly by 20% tank volume with oil where is placed the system of formation high-voltage pulses, thus the average power of the accelerator is increased by 6 times at the expense of increase in pulses repetition rate. Was created the system of the computerized monitoring parameters (output parameters and thermal mode) and remote control of the accelerator (charge voltage, pulse repetition rate), its elements and auxiliary systems (heat of the thyratron, vacuum system), the remote control panel is connected to the installation by the fiber-optical channel, what lightens the work for service personnel. For generating an electron beam up to 400 mm wide there are used metal- ceramic] and metal-dielectric cold cathodes of several emission elements (plates) with a non-uniform distribution of the electron beam current density on the output foil ± 15%. It was found that emission drop of both type of cathodes, during the operation at the high repetition rate (100 pps) is substantial at the beginning of the process, and then proceeds rather slowly that allows for continuous operation up to 40 h. Experiments showed that linear dependence of the voltage and a signal from the pin-diode remains within the range of the charge voltage 45-65 kV. Thus, voltage increases from 690 to 950 kV, and the signal from the pin-diode - from (2,8-4,6)*104 Gy/s. It allows to select electron energy quite precisely with consideration of the radiation technology requirements.

Electro-optical fuel pin identification system

International Nuclear Information System (INIS)

Kirchner, T.L.

1978-09-01

A prototype Electro-Optical Fuel Pin Identification System referred to as the Fuel Pin Identification System (FPIS) has been developed by the Hanford Engineering Development Laboratory (HEDL) in support of the Fast Flux Test Facility (FFTF) presently under construction at HEDL. The system is designed to remotely read an alpha-numeric identification number that is roll stamped on the top of the fuel pin end cap. The prototype FPIS consists of four major subassemblies: optical read head, digital compression electronics, video display, and line printer

Planar transistors and impatt diodes with ion implantation

International Nuclear Information System (INIS)

Dorendorf, H.; Glawischnig, H.; Grasser, L.; Hammerschmitt, J.

1975-03-01

Low frequency planar npn and pnp transistors have been developed in which the base and emitter have been fabricated using ion implantation of boron and phosphorus by a drive-in diffusion. Electrical parameters of the transistors are comparable with conventionally produced transistors; the noise figure was improved and production tolerances were significantly reduced. Silicon-impatt diodes for the microwave range were also fabricated with implanted pn junctions and tested for their high frequency characteristics. These diodes, made in an improved upside down technology, delivered output power up to 40 mW (burn out power) at 30 GHz. Reverse leakage current and current carrying capability of these diodes were comparable to diffused structures. (orig.) 891 ORU 892 MB [de

Radon measurements with a PIN photodiode

International Nuclear Information System (INIS)

Martin-Martin, A.; Gutierrez-Villanueva, J.L.; Munoz, J.M.; Garcia-Talavera, M.; Adamiec, G.; Iniguez, M.P.

2006-01-01

Silicon photodiodes are well suited to detect alphas coming from different sources as neutron reactions or radon daughters. In this work a radon in air detecting device, using an 18x18 mm silicon PIN photodiode is studied. The ionized airborne decay products formed during radon diffusion were focused by an accelerating high voltage to the PIN surface. Several conducting rings were disposed inside a cylindrical PVC vessel in such a way that they reproduced the electric field created by a punctual charge located behind PIN position. Alpha spectra coming from the neutral and ionized species deposited on the PIN surface, dominated by 218 Po and 214 Po progeny peaks, were recorded for varying conditions. Those include radon concentration from a Pylon source, high voltage (thousands of volts) and PIN inverse bias voltage. Different parameters such as temperature and humidity were also registered during data acquisition. The increase in the particle collection efficiency with respect to zero electric field was compared with the corresponding to a parallel plates configuration. A discussion is made in terms of the most appropriate voltages for different radon concentrations

Direct diode lasers and their advantages for materials processing and other applications

Science.gov (United States)

Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

2015-03-01

The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of direct current control allows pulses of several microseconds with hundreds of watts average power. Spot sizes of less than 100 μm are obtained at the work piece. Such a diode system allows materials processing with a pulse parameter range that is hardly addressed by any other laser system. High productivity material ablation with cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but

High power vertical stacked and horizontal arrayed diode laser bar development based on insulation micro-channel cooling (IMCC) and hard solder bonding technology

Science.gov (United States)

Wang, Boxue; Jia, Yangtao; Zhang, Haoyu; Jia, Shiyin; Liu, Jindou; Wang, Weifeng; Liu, Xingsheng

2018-02-01

An insulation micro-channel cooling (IMCC) has been developed for packaging high power bar-based vertical stack and horizontal array diode lasers, which eliminates many issues caused in its congener packaged by commercial copper formed micro-channel cooler(MCC), such as coefficient of thermal expansion (CTE) mismatch between cooler and diode laser bar, high coolant quality requirement (DI water) and channel corrosion and electro-corrosion induced by DI water if the DI-water quality is not well maintained The IMCC cooler separates water flow route and electrical route, which allows tap-water as coolant without electro-corrosion and therefore prolongs cooler lifetime dramatically and escalated the reliability of these diode lasers. The thickness of ceramic and copper in an IMCC cooler is well designed to minimize the CTE mismatch between laser bar and cooler, consequently, a very low "SMILE" of the laser bar can be achieved for small fast axis divergence after collimation. In additional, gold-tin hard solder bonding technology was also developed to minimize the risk of solder electromigration at high current density and thermal fatigue under hard-pulse operation mode. Testing results of IMCC packaged diode lasers are presented in this report.

Fabrication of FFTF fuel pin wire wrap

International Nuclear Information System (INIS)

Epperson, E.M.

1980-06-01

Lateral spacing between FFTF fuel pins is required to provide a passageway for the sodium coolant to flow over each pin to remove heat generated by the fission process. This spacing is provided by wrapping each fuel pin with type 316 stainless steel wire. This wire has a 1.435mm (0.0565 in.) to 1.448mm (0.0570 in.) diameter, contains 17 +- 2% cold work and was fabricated and tested to exacting RDT Standards. About 500 kg (1100 lbs) or 39 Km (24 miles) of fuel pin wrap wire is used in each core loading. Fabrication procedures and quality assurance tests are described

Nanoscale coatings for erosion and corrosion protection of copper microchannel coolers for high powered laser diodes

Science.gov (United States)

Flannery, Matthew; Fan, Angie; Desai, Tapan G.

2014-03-01

High powered laser diodes are used in a wide variety of applications ranging from telecommunications to industrial applications. Copper microchannel coolers (MCCs) utilizing high velocity, de-ionized water coolant are used to maintain diode temperatures in the recommended range to produce stable optical power output and control output wavelength. However, aggressive erosion and corrosion attack from the coolant limits the lifetime of the cooler to only 6 months of operation. Currently, gold plating is the industry standard for corrosion and erosion protection in MCCs. However, this technique cannot perform a pin-hole free coating and furthermore cannot uniformly cover the complex geometries of current MCCs involving small diameter primary and secondary channels. Advanced Cooling Technologies, Inc., presents a corrosion and erosion resistant coating (ANCERTM) applied by a vapor phase deposition process for enhanced protection of MCCs. To optimize the coating formation and thickness, coated copper samples were tested in 0.125% NaCl solution and high purity de-ionized (DIW) flow loop. The effects of DIW flow rates and qualities on erosion and corrosion of the ANCERTM coated samples were evaluated in long-term erosion and corrosion testing. The robustness of the coating was also evaluated in thermal cycles between 30°C - 75°C. After 1000 hours flow testing and 30 thermal cycles, the ANCERTM coated copper MCCs showed a corrosion rate 100 times lower than the gold plated ones and furthermore were barely affected by flow rates or temperatures thus demonstrating superior corrosion and erosion protection and long term reliability.

Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

Science.gov (United States)

Ho, Szuheng; Yu, Hyeonggeun; So, Franky

2017-11-01

Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

Pinning impulsive synchronization of stochastic delayed coupled networks

International Nuclear Information System (INIS)

Tang Yang; Fang Jian-An; Wong W K; Miao Qing-Ying

2011-01-01

In this paper, the pinning synchronization problem of stochastic delayed complex network (SDCN) is investigated by using a novel hybrid pinning controller. The proposed hybrid pinning controller is composed of adaptive controller and impulsive controller, where the two controllers are both added to a fraction of nodes in the network. Using the Lyapunov stability theory and the novel hybrid pinning controller, some sufficient conditions are derived for the exponential synchronization of such dynamical networks in mean square. Two numerical simulation examples are provided to verify the effectiveness of the proposed approach. The simulation results show that the proposed control scheme has a fast convergence rate compared with the conventional adaptive pinning method. (general)

Pin-wise Reactor Analysis Based on the Generalized Equivalence Theory

Energy Technology Data Exchange (ETDEWEB)

Yu, Hwan Yeal; Heo, Woong; Kim, Yong Hee [KAIST, Daejeon (Korea, Republic of)

2016-05-15

In this paper, a pin-wise reactor analysis is performed based on the generalized equivalence theory. From the conventional fuel assembly lattice calculations, pin-wise 2-group cross sections and pin DFs are generated. Based on the numerical results on a small PWR benchmark, it is observed that the pin-wise core analysis provide quite accurate prediction on the effective multiplication factor and the peak pin power error is bounded by about 3% in peripheral fuel assemblies facing the baffle-reflector. Also, it was found that relatively large pin power errors occur along the interface between clearly different fuel assemblies. It is expected that the GET-based pin-by-pin core calculation can be further developed as an advanced method for reactor analysis via improving the group constants and discontinuity factors. Recently, high-fidelity multi-dimensional analysis tools are gaining more attention because of their accurate prediction of local parameters for core design and safety assessment. In terms of accuracy, direct whole-core transport is quite promising. However, it is clear that it is still very costly in terms of the computing time and memory requirements. Another possible solution is the pin-by-pin core analysis in which only small fuel pins are homogenized and the 3-D core analysis is still performed using a low-order operator such as the diffusion theory. In this paper, a pin-by-pin core analysis is performed using the hybrid CMFD (HCMFD) method. Hybrid CMFD is a new global-local iteration method that has been developed for efficient parallel calculation of pinby-pin heterogeneous core analysis. For the HCMFD method, the one-node CMFD scheme is combined with a local two-node CMFD method in a non-linear way. Since the SPH method is iterative and SPH factors are not direction dependent, it is clear that SPH method takes more computing cost and cannot take into account the different heterogeneity and transport effects at each pin interface. Unlike the SPH

Pinning impulsive control algorithms for complex network

Energy Technology Data Exchange (ETDEWEB)

Sun, Wen [School of Information and Mathematics, Yangtze University, Jingzhou 434023 (China); Lü, Jinhu [Academy of Mathematics and Systems Science, Chinese Academy of Sciences, Beijing 100190 (China); Chen, Shihua [College of Mathematics and Statistics, Wuhan University, Wuhan 430072 (China); Yu, Xinghuo [School of Electrical and Computer Engineering, RMIT University, Melbourne VIC 3001 (Australia)

2014-03-15

In this paper, we further investigate the synchronization of complex dynamical network via pinning control in which a selection of nodes are controlled at discrete times. Different from most existing work, the pinning control algorithms utilize only the impulsive signals at discrete time instants, which may greatly improve the communication channel efficiency and reduce control cost. Two classes of algorithms are designed, one for strongly connected complex network and another for non-strongly connected complex network. It is suggested that in the strongly connected network with suitable coupling strength, a single controller at any one of the network's nodes can always pin the network to its homogeneous solution. In the non-strongly connected case, the location and minimum number of nodes needed to pin the network are determined by the Frobenius normal form of the coupling matrix. In addition, the coupling matrix is not necessarily symmetric or irreducible. Illustrative examples are then given to validate the proposed pinning impulsive control algorithms.

Pinning impulsive control algorithms for complex network

International Nuclear Information System (INIS)

Sun, Wen; Lü, Jinhu; Chen, Shihua; Yu, Xinghuo

2014-01-01

In this paper, we further investigate the synchronization of complex dynamical network via pinning control in which a selection of nodes are controlled at discrete times. Different from most existing work, the pinning control algorithms utilize only the impulsive signals at discrete time instants, which may greatly improve the communication channel efficiency and reduce control cost. Two classes of algorithms are designed, one for strongly connected complex network and another for non-strongly connected complex network. It is suggested that in the strongly connected network with suitable coupling strength, a single controller at any one of the network's nodes can always pin the network to its homogeneous solution. In the non-strongly connected case, the location and minimum number of nodes needed to pin the network are determined by the Frobenius normal form of the coupling matrix. In addition, the coupling matrix is not necessarily symmetric or irreducible. Illustrative examples are then given to validate the proposed pinning impulsive control algorithms

Non-Reciprocal Geometric Wave Diode by Engineering Asymmetric Shapes of Nonlinear Materials

Energy Technology Data Exchange (ETDEWEB)

Ren, Jie [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Li, Nianbei [Tongji Univ., Shanghai Shi (China)

2014-02-18

Unidirectional nonreciprocal transport is at the heart of many fundamental problems and applications in both science and technology. Here we study how to design the novel wave diode devices to realize the non-reciprocal wave propagations. Analytical results reveal that such non-reciprocal wave propagation can be purely induced by asymmetric geometry in nonlinear materials. The detailed numerical simulations are performed for a more realistic geometric wave diode model with typical asymmetric shape, where good non-reciprocal wave diode effect has been demonstrated. The results open a way for making wave diodes efficiently simply through shape engineering.

Single pin BWR benchmark problem for coupled Monte Carlo - Thermal hydraulics analysis

International Nuclear Information System (INIS)

Ivanov, A.; Sanchez, V.; Hoogenboom, J. E.

2012-01-01

As part of the European NURISP research project, a single pin BWR benchmark problem was defined. The aim of this initiative is to test the coupling strategies between Monte Carlo and subchannel codes developed by different project participants. In this paper the results obtained by the Delft Univ. of Technology and Karlsruhe Inst. of Technology will be presented. The benchmark problem was simulated with the following coupled codes: TRIPOLI-SUBCHANFLOW, MCNP-FLICA, MCNP-SUBCHANFLOW, and KENO-SUBCHANFLOW. (authors)

Single pin BWR benchmark problem for coupled Monte Carlo - Thermal hydraulics analysis

Energy Technology Data Exchange (ETDEWEB)

Ivanov, A.; Sanchez, V. [Karlsruhe Inst. of Technology, Inst. for Neutron Physics and Reactor Technology, Herman-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Hoogenboom, J. E. [Delft Univ. of Technology, Faculty of Applied Sciences, Mekelweg 15, 2629 JB Delft (Netherlands)

2012-07-01

As part of the European NURISP research project, a single pin BWR benchmark problem was defined. The aim of this initiative is to test the coupling strategies between Monte Carlo and subchannel codes developed by different project participants. In this paper the results obtained by the Delft Univ. of Technology and Karlsruhe Inst. of Technology will be presented. The benchmark problem was simulated with the following coupled codes: TRIPOLI-SUBCHANFLOW, MCNP-FLICA, MCNP-SUBCHANFLOW, and KENO-SUBCHANFLOW. (authors)

Vortex pinning landscape in MOD-TFA YBCO nanostroctured films

Science.gov (United States)

Gutierrez, J.; Puig, T.; Pomar, A.; Obradors, X.

2008-03-01

A methodology of general validity to study vortex pinning in YBCO based on Jc transport measurements is described. It permits to identify, separate and quantify three basic vortex pinning contributions associated to anisotropic-strong, isotropic-strong and isotropic-weak pinning centers. Thereof, the corresponding vortex pinning phase diagrams are built up. This methodology is applied to the new solution-derived YBCO nanostructured films, including controlled interfacial pinning by the growth of nanostructured templates by means of self-assembled processes [1] and YBCO-BaZrO3 nanocomposites prepared by modified solution precursors. The application of the methodology and comparison with a standard solution-derived YBCO film [2], enables us to identify the nature and the effect of the additional pinning centers induced. The nanostructured templates films show c-axis pinning strongly increased, controlling most of the pinning phase diagram. On the other hand, the nanocomposites have achieved so far, the highest pinning properties in HTc-superconductors [3], being the isotropic-strong defects contribution the origin of their unique properties. [1] M. Gibert et al, Adv. Mat. vol 19, p. 3937 (2007) [2] Puig.T et al, SuST EUCAS 2007 (to be published) [3] J. Gutierrez et al, Nat. Mat. vol. 6, p. 367 (2007) * Work supported by HIPERCHEM, NANOARTIS and MAT2005-02047

Vortex pinning by point defect in superconductors

International Nuclear Information System (INIS)

Liao Hongyin; Zhou Shiping; Du Haochen

2003-01-01

We apply the periodic time-dependent Ginzburg-Landau model to study vortex distribution in type-II superconductors with a point-like defect and square pinning array. A defect site will pin vortices, and a periodic pinning array with right geometric parameters, which can be any form designed in advance, shapes the vortex pattern as external magnetic field varies. The maximum length over which an attractive interaction between a pinning centre and a vortex extends is estimated to be about 6.0ξ. We also derive spatial distribution expressions for the order parameter, vector potential, magnetic field and supercurrent induced by a point defect. Theoretical results and numerical simulations are compared with each other and they are consistent

Spin-Wave Diode

Directory of Open Access Journals (Sweden)

Jin Lan (兰金

2015-12-01

Full Text Available A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound states in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. Our findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.

Novel recycle technology for recovering rare metals (Ga, In) from waste light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Zhan, Lu; Xia, Fafa; Ye, Qiuyu; Xiang, Xishu; Xie, Bing, E-mail: bxie@des.ecnu.edu.cn

2015-12-15

Highlights: • Rare metals (Ga, In) are separated and recycled from waste light-emitting diodes. • Pyrolysis, physical disaggregation and vacuum metallurgy separation are proposed. • There is no hazardous materials produced in this process. - Abstract: This work develops a novel process of recycling rare metals (Ga, In) from waste light-emitting diodes using the combination of pyrolysis, physical disaggregation methods and vacuum metallurgy separation. Firstly, the pure chips containing InGaN/GaN are adopted to study the vacuum separation behavior of rare metals, which aims to provide the theoretical foundation for recycling gallium and indium from waste light-emitting diodes. In order to extract the rare-metal-rich particles from waste light-emitting diodes, pyrolysis and physical disaggregation methods (crushing, screening, grinding and secondly screening) are studied respectively, and the operating parameters are optimized. With low boiling points and high saturation vapor pressures under vacuum, gallium and indium are separated from rare-metal-rich particles by the process of evaporation and condensation. By reference to the separating parameters of pure chips, gallium and indium in waste light-emitting diodes are recycled with the recovery efficiencies of 93.48% and 95.67% under the conditions as follows: heating temperature of 1373 K, vacuum pressure of 0.01–0.1 Pa, and holding time of 60 min. There are no secondary hazardous materials generated in the whole processes. This work provides an efficient and environmentally friendly process for recycling rare metals from waste light-emitting diodes.

Inscuteable Regulates the Pins-Mud Spindle Orientation Pathway

Science.gov (United States)

Mauser, Jonathon F.; Prehoda, Kenneth E.

2012-01-01

During asymmetric cell division, alignment of the mitotic spindle with the cell polarity axis ensures that the cleavage furrow separates fate determinants into distinct daughter cells. The protein Inscuteable (Insc) is thought to link cell polarity and spindle positioning in diverse systems by binding the polarity protein Bazooka (Baz; aka Par-3) and the spindle orienting protein Partner of Inscuteable (Pins; mPins or LGN in mammals). Here we investigate the mechanism of spindle orientation by the Insc-Pins complex. Previously, we defined two Pins spindle orientation pathways: a complex with Mushroom body defect (Mud; NuMA in mammals) is required for full activity, whereas binding to Discs large (Dlg) is sufficient for partial activity. In the current study, we have examined the role of Inscuteable in mediating downstream Pins-mediated spindle orientation pathways. We find that the Insc-Pins complex requires Gαi for partial activity and that the complex specifically recruits Dlg but not Mud. In vitro competition experiments revealed that Insc and Mud compete for binding to the Pins TPR motifs, while Dlg can form a ternary complex with Insc-Pins. Our results suggest that Insc does not passively couple polarity and spindle orientation but preferentially inhibits the Mud pathway, while allowing the Dlg pathway to remain active. Insc-regulated complex assembly may ensure that the spindle is attached to the cortex (via Dlg) before activation of spindle pulling forces by Dynein/Dynactin (via Mud). PMID:22253744

Establishing the need for an engineering standard for agricultural hitch pins.

Science.gov (United States)

Deboy, G R; Knapp, W M; Field, W E; Krutz, G W; Corum, C L

2012-04-01

Documented incidents have occurred in which failure or unintentional disengagement of agricultural hitch pins has contributed to property damage and personal injury. An examination of current hitch pin use on a convenience sample of farm operations in Indiana revealed a variety of non-standard, worn and damaged, and inappropriately sized hitch pins in use. Informal interviews with the farm operators confirmed that hitch pin misuse, failure, or disengagement is a relatively widespread problem that remains largely unaddressed. On-site observations also suggested a low use of hitch pin retaining devices or safety chains. A review of prior research revealed that little attention has been given to this problem, and currently no documentation allows for an estimate of the frequency or severity of losses associated with hitch pin misuse, failure, or disengagement. No specific engineering standards were found that directly applied to the design, appropriate selection, or loading capacity of agricultural hitch pins. Major suppliers of replacement hitch pins currently provide little or no information on matching hitch pin size to intended applications, and most replacement hitch pins examined were of foreign origin, with the overwhelming majority imported from China or India. These replacement hitch pins provided no specifications other than diameter, length, and, in some cases, labeling that indicated that the pins had been "heat treated. " Testing of a sample of 11 commercially available replacement hitch pins found variation along the length of the pin shaft and between individual pins in surface hardness, a potential predictor of pin failure. Examination of 17 commercially available replacement pins also revealed a variety of identifiers used to describe pin composition and fabrication methods, e.g., "heat treated." None of the pins examined provided any specifications on loading capacity. It was therefore concluded that there is a need to develop an agricultural hitch

Roles of pinning strength and density in vortex melting

International Nuclear Information System (INIS)

Obaidat, I M; Khawaja, U Al; Benkraouda, M

2008-01-01

We have investigated the role of pinning strength and density on the equilibrium vortex-lattice to vortex-liquid phase transition under several applied magnetic fields. This study was conducted using a series of molecular dynamic simulations on several samples with different strengths and densities of pinning sites which are arranged in periodic square arrays. We have found a single solid-liquid vortex transition when the vortex filling factor n>1. We have found that, for fixed pinning densities and strengths, the melting temperature, T m , decreases almost linearly with increasing magnetic field. Our results provide direct numerical evidence for the significant role of both the strength and density of pinning centers on the position of the melting line. We have found that the vortex-lattice to vortex-liquid melting line shifts up as the pinning strength or the pinning density was increased. The effect on the melting line was found to be more pronounced at small values of strength and density of pinning sites

Fabrication drawings of fuel pins for FUJI project among PSI, JNC and NRG. Revised version 2

International Nuclear Information System (INIS)

Ozawa, Takayuki; Nakazawa, Hiroaki; Abe, Tomoyuki; Nagayama, Masahiro

2002-10-01

Irradiation tests and post-irradiation examinations in the framework of JNC-PSI-NRG collaboration project will be performed in 2003-2005. Irradiation fuel pins will be fabricated by the middle of 2003. The fabrication procedure for irradiation fuel pins has been started in 2001. Several fabrication tests and qualification tests in JNC and PSI (Paul Scherrer Institut, Switzerland) have been performed before the fuel pin fabrication. According to the design assignment between PSI and JNC in the frame of this project, PSI should make specification documents for the fuel pellet, the sphere-pac fuel particles, the vipac fuel fragments, and the fuel segment fabrication. JNC should make the fabrication drawings for irradiation pins. JNC has been performed the fuel design in cooperation with PSI and NRG (Nuclear Research and Consultancy Group, Holland). In this project, the pelletized fuel, the sphere-pac fuel, and the vipac fuel will be simultaneously irradiated on HFR (High Flux Reactor, Holland). The fabrication drawings have been made under the design assignment with PSI, and consist of the drawings of MOX pellet, thermal insulator pellet, pin components, fuel segments, and the constructed pin. The fabrication drawings were approved in October 2001, but after that, the optimization of specifications was discussed and agreed among all partners. According to this agreement, the fabrication drawings were revised in January 2002. After the earlier revision, the shape of particle retainer to be made by PSI was modified from its drawing beforehand delivered. In this report, the fabrication drawings revised again will be shown, and the fabrication procedure (welding Qualification Tests) will be modified in accordance with the result of discussion on the 3rd technical meeting held in September 2002. These design works have been performed in Fuel Design and Evaluation Group, Plutonium Fuel Fabrication Division, Plutonium Fuel Center under the commission of Plutonium Fuel

Experimental study of the mechanical behaviour of pin reinforced foam core sandwich materials under shear load

International Nuclear Information System (INIS)

Dimassi, M A; Brauner, C; Herrmann, A S

2016-01-01

Sandwich structures with a lightweight closed cell hard foam core have the potential to be used in primary structures of commercial aircrafts. Compared to honeycomb core sandwich, the closed cell foam core sandwich overcomes the issue of moisture take up and makes the manufacturing of low priced and highly integrated structures possible. However, lightweight foam core sandwich materials are prone to failure by localised external loads like low velocity impacts. Invisible cracks could grow in the foam core and threaten the integrity of the structure. In order to enhance the out-of-plane properties of foam core sandwich structures and to improve the damage tolerance (DT) dry fibre bundles are inserted in the foam core. The pins are infused with resin and co-cured with the dry fabric face sheets in an out-of-autoclave process. This study presents the results obtained from shear tests following DIN 53294-standard, on flat sandwich panels. All panels were manufactured with pin-reinforcement manufactured with the Tied Foam Core Technology (TFC) developed by Airbus. The effects of pin material (CFRP and GFRP) and pin volume fraction on the shear properties of the sandwich structure and the crack propagation were investigated and compared to a not pinned reference. It has been concluded that the pin volume fraction has a remarkable effect on the shear properties and damage tolerance of the observed structure. Increasing the pin volume fraction makes the effect of crack redirection more obvious and conserves the integrity of the structure after crack occurrence. (paper)

Ultrasonic inspections of fuel alignment pins

International Nuclear Information System (INIS)

Rathgeb, W.; Schmid, R.

1994-01-01

As a remedy to the practical problem of defects in fuel alignment pins made of Inconel X750, an inspection technique has been developed which fully meets the requirements of detecting defects. The newly used fuel alignment pins made of austenite are easy to test and therefore satisfy the necessity of further inspections.For the fuel alignment pins of the upper core structure a safe and fast inspection technique was made available. The inspection sensitivity is high and it is possible to give quantitative directions concerning defect orientation and depth. After the required inspections had been concluded in 1989, a total of 18 inspections were carried out in various national and international nuclear power plants in the following years. During this time more than 6000 fuel alignment pines were examined.For the fuel alignment pins the inspection technique provided could increase the understanding of the defect process. This technique contributed to the development of an adaptive and economical repair strategy. ((orig.))

Fuel pin bowing and related investigation of WWER-440 control rod influence on power release inside of neighbouring fuel pins

International Nuclear Information System (INIS)

Mikus, J.

2005-01-01

The purpose of this work consists in investigation of the WWER-440 control rod (CR) influence on space power distribution, especially from viewpoint of the values and gradient occurrence that could result in static and cyclic loads with some consequences, e.g. fuel pin bowing. As known, CR can cause power peaks in periphery fuel pins of adjacent operating assemblies because of the butt joint design of the absorbing adapter to the CR fuel part, that is, presence of the water cavity resulting in a flash up of thermal neutrons. As a consequence, beside well-known peaks in axial power distribution, above power gradients can occur inside of mentioned fuel pins. Because of complicated geometry and material composition of the CR, the detailed calculations concerning both above phenomena are complicated, too. Therefore it is useful to acquire appropriate experimental data to investigate mentioned influence and compare them with calculations. Since detailed power distributions cannot be obtained in the NPP, needed information is provided by means of experiments on research reactors. In case of measurements inside of fuel pins, special (e.g. track) detectors placed between fuel pellets are used. Such works are relatively complicated and time consuming, therefore an evaluation based on mathematical modelling and numerical approximation was proposed by means of that, and using measured power release in some selected fuel pins, information about power release inside of one of these fuel pins, can be obtained. For this purpose, an experiment on light water, zero-power research reactor LR-0 was realized and axial power distribution measurements were performed in a WWER-440 type core near to an authentic CR model. Application of the above evaluation method is demonstrated on one ''investigated'' fuel pin neighbouring CR by means of following results: 1. Axial power distribution inside of investigated fuel pin in two opposite positions on its pellets surface that are situated to

Cell homogenization methods for pin-by-pin core calculations tested in slab geometry

International Nuclear Information System (INIS)

Yamamoto, Akio; Kitamura, Yasunori; Yamane, Yoshihiro

2004-01-01

In this paper, performances of spatial homogenization methods for fuel or non-fuel cells are compared in slab geometry in order to facilitate pin-by-pin core calculations. Since the spatial homogenization methods were mainly developed for fuel assemblies, systematic study of their performance for the cell-level homogenization has not been carried out. Importance of cell-level homogenization is recently increasing since the pin-by-pin mesh core calculation in actual three-dimensional geometry, which is less approximate approach than current advanced nodal method, is getting feasible. Four homogenization methods were investigated in this paper; the flux-volume weighting, the generalized equivalence theory, the superhomogenization (SPH) method and the nonlinear iteration method. The last one, the nonlinear iteration method, was tested as the homogenization method for the first time. The calculations were carried out in simplified colorset assembly configurations of PWR, which are simulated by slab geometries, and homogenization performances were evaluated through comparison with the reference cell-heterogeneous calculations. The calculation results revealed that the generalized equivalence theory showed best performance. Though the nonlinear iteration method can significantly reduce homogenization error, its performance was not as good as that of the generalized equivalence theory. Through comparison of the results obtained by the generalized equivalence theory and the superhomogenization method, important byproduct was obtained; deficiency of the current superhomogenization method, which could be improved by incorporating the 'cell-level discontinuity factor between assemblies', was clarified

Laminated Amorphous Silicon Neutron Detector (pre-print)

International Nuclear Information System (INIS)

McHugh, Harry; Branz, Howard; Stradins, Paul; Xu, Yueqin

2009-01-01

An internal R and D project was conducted at the Special Technologies Laboratory (STL) of National Security Technologies, LLC (NSTec), to determine the feasibility of developing a multi-layer boron-10 based thermal neutron detector using the amorphous silicon (AS) technology currently employed in the manufacture of liquid crystal displays. The boron-10 neutron reaction produces an alpha that can be readily detected. A single layer detector, limited to an approximately 2-micron-thick layer of boron, has a theoretical sensitivity of about 3%; hence a thin multi-layer device with high sensitivity can theoretically be manufactured from single layer detectors. Working with National Renewable Energy Laboratory (NREL), an AS PiN diode alpha detector was developed and tested. The PiN diode was deposited on a boron-10 coated substrate. Testing confirmed that the neutron sensitivity was nearly equal to the theoretical value of 3%. However, adhesion problems with the boron-10 coating prevented successful development of a prototype detector. Future efforts will include boron deposition work and development of integrated AS signal processing circuitry.

Pinning Synchronization of Switched Complex Dynamical Networks

Directory of Open Access Journals (Sweden)

Liming Du

2015-01-01

Full Text Available Network topology and node dynamics play a key role in forming synchronization of complex networks. Unfortunately there is no effective synchronization criterion for pinning synchronization of complex dynamical networks with switching topology. In this paper, pinning synchronization of complex dynamical networks with switching topology is studied. Two basic problems are considered: one is pinning synchronization of switched complex networks under arbitrary switching; the other is pinning synchronization of switched complex networks by design of switching when synchronization cannot achieved by using any individual connection topology alone. For the two problems, common Lyapunov function method and single Lyapunov function method are used respectively, some global synchronization criteria are proposed and the designed switching law is given. Finally, simulation results verify the validity of the results.

Breached-pin testing in the US

International Nuclear Information System (INIS)

Mahagin, D.E.; Lambert, J.D.B.

1981-04-01

Experience gained at EBR-II by the late 1970's from a significant number of failures in experimental fuel-pin irradiations forms the basis of a program directed towards the characterization of breached pins. The questions to be answered and the issues raised by further testing are discussed

A new avalanche photo diode based readout for the crystal barrel calorimeter

Energy Technology Data Exchange (ETDEWEB)

Urban, Martin [Helmholtz-Institut fuer Strahlen- und Kernphysik, Nussallee 14-16, 53115 Bonn (Germany); Collaboration: CBELSA/TAPS-Collaboration

2015-07-01

The CBELSA/TAPS experiment at ELSA has proven successful in the measurement of double polarization observables in meson photoproduction off protons and neutrons. To be able to measure purely neutral reactions on a polarized neutron target with high efficiency, the main calorimeter consisting of 1320 CsI(Tl) crystals has to be integrated into the first level trigger. Key requirement to achieve this goal is an exchange of the existing PIN photo diode by a new avalanche photo diode (APD) readout. The main advantage of the new readout system is that it will provide timing information which allows a fast trigger signal. The energy resolution will remain compatible to the previous system. Besides the development of automated test routines for the front end electronics, the characterization of all APDs was successfully accomplished in Bonn. After tests with a 3 x 3 CsI(Tl) crystal matrix at the tagged photon beam facilities at ELSA and MAMI the first half of the Crystal Barrel was upgraded in 2014. This talk shows the result of the latest test measurements including the gain stabilization of the new APD readout electronics and presents the progress of the ongoing upgrade.

Is magnetic pinning a dominant mechanism in Nb-Ti

International Nuclear Information System (INIS)

Cooley, L.D.; Lee, P.J.; Larbalestier, D.C.

1991-01-01

In this paper, the authors compare the pinning behavior of an artificial pinning center (APC) composite and a nanometer-filament Nb 46.5 wt% Ti composite to that of a conventional Nb 48 wt% Ti composite. The microstructure of the APC composite resembles the conventional composite, where ribbons of normal metal form the pinning centers, whereas the nanometer-filament composite has no internal normal metal but pins instead at the filament surface. The APC composite exhibits much stronger pinning relative to B c 2 than the conventional composite (21.4 GN/m 3 , 7 T vs. 18.9 GN/m 3 , 11 T), which is possibly due to the increased amount of pinning center (50 vol.% vs. 25 vol.%), however the proximity effect reduces the B c 2 unfavorably

End-threaded intramedullary positive profile screw ended self-tapping pin (Admit pin) - A cost-effective novel implant for fixing canine long bone fractures.

Science.gov (United States)

Chanana, Mitin; Kumar, Adarsh; Tyagi, Som Prakash; Singla, Amit Kumar; Sharma, Arvind; Farooq, Uiase Bin

2018-02-01

The current study was undertaken to evaluate the clinical efficacy of end-threaded intramedullary pinning for management of various long bone fractures in canines. This study was conducted in two phases, managing 25 client-owned dogs presented with different fractures. The technique of application of end-threaded intramedullary pinning in long bone fractures was initially standardized in 6 clinical patients presented with long bone fractures. In this phase, end-threaded pins of different profiles, i.e., positive and negative, were used as the internal fixation technique. On the basis of results obtained from standardization phase, 19 client-owned dogs clinically presented with different fractures were implanted with end-threaded intramedullary positive profile screw ended self-tapping pin in the clinical application phase. The patients, allocated randomly in two groups, when evaluated postoperatively revealed slight pin migration in Group-I (negative profile), which resulted in disruption of callus site causing delayed union in one case and large callus formation in other two cases whereas no pin migration was observed in Group-II (positive profile). Other observations in Group-I was reduced muscle girth and delayed healing time as compared to Group-II. In clinical application, phase 21 st and 42 nd day post-operative radiographic follow-up revealed no pin migration in any of the cases, and there was no bone shortening or fragment collapse in end-threaded intramedullary positive profile screw ended self-tapping pin. The end-threaded intramedullary positive profile screw ended self-tapping pin used for fixation of long bone fractures in canines can resist pin migration, pin breakage, and all loads acting on the bone, i.e., compression, tension, bending, rotation, and shearing to an extent with no post-operative complications.

Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

International Nuclear Information System (INIS)

Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Wildermuth, D.; Goodman, C.; Fujieda, I.

1992-07-01

We describe the characteristics of thin (1 μm) and thick (> 30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-ray, γ rays and thermal neutrons. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For thermal neutron detection we use thin (2∼5 μm) gadolinium converters on 30 μm thick a-Si:H diodes. For direct detection of minimum ionizing particles and others with high resistance to radiation damage, we use the thick p-i-n diode arrays. Diode and amorphous silicon readouts as well as polysilicon pixel amplifiers are described

Happy Pinning

DEFF Research Database (Denmark)

Fausing, Bent

2012-01-01

This is about Pinterest, but with a different approach than usual to social networks. Pinterest is an image site par excellence. The images are as Windows that open outwards and also lets us look inwards and displays the soul and heart, the unintentional or pre-conscious desires. Happy Pinning!...

Suspension scheme for fuel pin

International Nuclear Information System (INIS)

Butts, C.E.; Gray, H.C.

1975-01-01

A description is presented of a nuclear fuel pin suspension arrangement comprising, in combination, a rod; a first beam member connected to said rod at one end; a plurality of parallel-spaced slidable fuel support plates attached to said first beam member, the longitudinal axis of first beam member being perpendicular to the longitudinal axis of each of said fuel support plates, a first coupling means disposed along the length of the first beam member for permitting slidable fuel support plates parallel movement with respect to the longitudinal axis of said first beam member, a second coupling means located at one end of each of slidable fuel plates for slidably engaging first coupling means of first beam member, a second beam member connected to the other end of each of parallel-spaced slidable fuel support plates and providing an extension, second beam member being provided with a third coupling means disposed along the length of second beam member at one end thereof; and a plurality of fuel pins provided with a fourth coupling means located at one end of each fuel pin for slidably engaging third coupling means of second beam member to permit each fuel pin parallel movement with respect to the longitudinal axis of second beam member. (U.S.)

Correlation of creep and swelling with fuel pin performance

International Nuclear Information System (INIS)

Jackson, R.J.; Washburn, D.F.; Garner, F.A.; Gilbert, E.R.

1975-09-01

The HEDL PNL-11 experiment described was one in a series of fueled subassemblies irradiated in EBR-II to demonstrate the adequacy of the FFTF fuel pin design. The cladding material, dimensions, and fuel density are prototypic of FFTF. Because neutron flux in EBR-II is lower than in FFTF, the uranium enrichment is higher in these experimental fuel pins, irradiated in EBR-II, than the FFTF enrichment for comparable linear heat rates. Some pertinent oprating conditions for the center fuel pin in this experiment are listed. This 37-pin subassembly represents, at 110,000 MWd/MTM, the highest burnup yet attained by a prototypic FFTF subassembly. Similarly, this is the highest fluence presently attained by prototypic fuel pins. A cladding breach occurred in one fuel pin which is presently being examined. Results are presented and discussed

Sensitive silicon PIN-diode dosimeter for fast neutrons and method to control and increase its sensitivity

International Nuclear Information System (INIS)

Swinehart, P.R.; Swartz, J.M.

1978-01-01

With the personnel dosimeter, applicable e.g. in medicine, a dose of 0.1 rad for neutrons with an energy greater than 10 keV can be detected. In the range between 0.1 and 20 rad sensitivity is increased to 5 mV/rad. This sensitivity can be achieved by distributing the mass of the semiconductor material of the diode or equal to four times the reciprocal base width. Appropriate dimensions are 750 μm for the edge length of the end surface resp. diameter and 750 μm up to 5000 μm for the base width. (DG) [de

PINS-3X Operations

Energy Technology Data Exchange (ETDEWEB)

E.H. Seabury

2013-09-01

Idaho National Laboratory’s (INL’s) Portable Isotopic Neutron Spectroscopy System (PINS) non-intrusively identifies the chemical fill of munitions and sealed containers. The PINS-3X variant of the system is used to identify explosives and uses a deuterium-tritium (DT) electronic neutron generator (ENG) as the neutron source. Use of the system, including possession and use of the neutron generator and shipment of the system components requires compliance with a number of regulations. This report outlines some of these requirements as well as some of the requirements in using the system outside of INL.

Dependence of J c on pinning center morphology: An explanation of record J c observed for discontinuous columnar pinning of vortices

International Nuclear Information System (INIS)

Weinstein, R.; Gandini, A.; Parks, D.; Sawh, R.; Mayes, B.

2006-01-01

An experimental study of defects caused by ion irradiation has proven that very discontinuous multiple-in-line-damage results in much higher J c than continuous columnar pinning centers. This is contrary to conventional wisdom. We develop a first approximation to a theory relating J c to the morphology of pinning centers. Qualitative agreement with experiment is achieved. Conclusions indicate the relative importance of pinning potential, percolation, and critical temperature for various morphologies. Results suggest the leading importance of pinning, compared to texture, weak links and oxygenation in achievement of the goal of high J c especially in large grain HTS

Response of STFZ diode as on-line gamma dosimeter in radiation processing

International Nuclear Information System (INIS)

Camargo, Fabio de; Goncalves, Josemary A.C.; Pascoalino, Kelly C.; Bueno, Carmen C.; Tuominen, Eija; Tuovinen, Esa; Haerkoenen, Jaakko

2009-01-01

In this work, it is presented the results obtained with this rad-hard STFZ silicon diode as a high-dose gamma dosimeter. This device is a p + /n/n + junction diode, made on FZ Si wafer manufactured by Okmetic Oyj., Vantaa, Finland and processed by the Microelectronics Center of Helsinki University of Technology. The results obtained about the photocurrent registered and total charge accumulated on the diode as a function of the total absorbed dose are presented. The diodes' response showed a significant saturation effect for total absorbed doses higher than approximately 15 kGy. To reduce this effect, some STFZ samples have been pre-irradiated with gamma rays at accumulated dose of 700 kGy in order to saturate the trap production in the diode's sensitive volume. (author)

Quantitative Detection of Combustion Species using Ultra-Violet Diode Lasers

Science.gov (United States)

Pilgrim, J. S.; Peterson, K. A.

2001-01-01

Southwest Sciences is developing a new microgravity combustion diagnostic based on UV diode lasers. The instrument will allow absolute concentration measurements of combustion species on a variety of microgravity combustion platforms including the Space Station. Our approach uses newly available room temperature UV diode lasers, thereby keeping the instrument compact, rugged and energy efficient. The feasibility of the technique was demonstrated by measurement of CH radicals in laboratory flames. Further progress in fabrication technology of UV diode lasers at shorter wavelengths and higher power will result in detection of transient species in the deeper UV. High sensitivity detection of combustion radicals is provided with wavelength modulation absorption spectroscopy.

Comparison of the effect of diode laser versus intense pulsed light in axillary hair removal.

Science.gov (United States)

Ormiga, Patricia; Ishida, Cleide Eiko; Boechat, Alvaro; Ramos-E-Silva, Marcia

2014-10-01

Devices such as diode laser and intense pulsed light (IPL) are in constant development aiming at permanent hair removal, but there are few comparative studies between these technologies. The objective was to comparatively assess axillary hair removal performed by diode laser and IPL and to obtain parameters of referred pain and evolution response for each method. A comparative prospective, double-blind, and randomized study of axillary hair removal performed by the diode laser and IPL was conducted in 21 females. Six sessions were held with application of the diode laser in one axilla and the IPL in the other, with intervals of 30 days and follow-up of 6 months after the last session. Clinical photographs and digital dermoscopy for hair counts in predefined and fixed fields of the treated areas were performed before, 2 weeks after the sixth session, and 6 months after the end of treatment. A questionnaire to assess the pain was applied. The number of hair shafts was significantly reduced with the diode laser and IPL. The diode laser was more effective, although more painful than the IPL. No serious, adverse, or permanent effects were observed with both technologies. Both diode laser and the IPL are effective, safe, and able to produce lasting results in axillary hair removal.

Fabrication of the instrumented fuel rods for the 3-Pin Fuel Test Loop at HANARO

International Nuclear Information System (INIS)

Sohn, Jae Min; Park, Sung Jae; Shin, Yoon Tag; Lee, Jong Min; Ahn, Sung Ho; Kim, Soo Sung; Kim, Bong Goo; Kim, Young Ki; Lee, Ki Hong; Kim, Kwan Hyun

2008-09-01

The 3-Pin Fuel Test Loop(hereinafter referred to as the '3-Pin FTL') facility has been installed at HANARO(High-flux Advanced Neutron Application Reactor) and the 3-Pin FTL is under a test operation. The purpose of this report is to fabricate the instrumented fuel rods for the 3-Pin FTL. The fabrication of these fuel rods was based on experiences and technologies of the instrumented fuel rods for an irradiation fuel capsule. The three instrumented fuel rods of the 3-Pin FTL have been designed. The one fuel rod(180 .deg. ) was designed to measure the centerline temperature of the nuclear fuels and the internal pressure of the fuel rod, and others(60 .deg. and 300 .deg. ) were designed to measure the centerline temperature of the fuel pellets. The claddings were made of the reference material 1 and 2 and new material 1 and 2. And nuclear fuel was used UO 2 (2.0w/o) pellet type with large grain and standard grain. The major procedures of fabrication are followings: (1) the assembling and weld of fuel rods with the pellet mockups and the sensor mockups for the qualification tests, (2) the qualification tests(dimension measurements, tensile tests, metallography examinations and helium leak tests) of weld, (3) the assembling and weld of instrumented fuel rods with the nuclear pellets and the sensors for the irradiation test, and (4) the qualification tests(the helium leak test, the dimensional measurement, electric resistance measurements of sensors) of test fuel rods. Satisfactory results were obtained for all the qualification tests of the instrumented fuel rods for the 3-Pin FTL. Therefore the three instrumented fuel rods for the 3-Pin FTL have been fabricated successfully. These will be installed in the In-Pile Section of 3-Pin FTL. And the irradiation test of these fuel rods is planned from the early next year for about 3 years at HANARO

Bactericidal micron-thin sol-gel films prevent pin tract and periprosthetic infection.

Science.gov (United States)

Qu, Haibo; Knabe, Christine; Burke, Megan; Radin, Shula; Garino, Jonathan; Schaer, Thomas; Ducheyne, Paul

2014-08-01

Orthopedic injuries constitute the majority of wounds sustained by U.S. soldiers in recent conflicts. The risk of infection is considerable with fracture fixation devices. In this pilot study, we examined the use of unique bactericidal micron-thin sol-gel films on fracture fixation devices and their ability to prevent and eradicate infections. External fixation was studied with micron-thin sol-gel coated percutaneous pins releasing triclosan and inserted medially into rabbit tibiae. A total of 11 rabbits received percutaneous pins that were either uncoated or sol-gel/triclosan coated. Internal fracture fixation was also studied using sol-gel coated intramedullary (IM) nails releasing vancomycin in the intramedullary tibiae. Six sheep received IM nails that were coated with a sol-gel film that either contained vancomycin or did not contain vancomycin. All animals were challenged with Staphylococcus aureus around the implant. Animals were euthanized at 1 month postoperative. Rabbits receiving triclosan/sol-gel coated percutaneous pins did not show signs of infection. Uncoated percutaneous pins had a significantly higher infection rate. In the sheep study, there were no radiographic signs of osteomyelitis with vancomycin/sol-gel coated IM nails, in contrast to the observations in the control cohort. Hence, the nanostructured sol-gel controlled release technology offers the promise of a reliable and continuous delivery system of bactericidals from orthopedic devices to prevent and treat infection. Reprint & Copyright © 2014 Association of Military Surgeons of the U.S.

Amorphous silicon based radiation detectors

International Nuclear Information System (INIS)

Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

1991-07-01

We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

Diode pumped solid state laser by two diodes

International Nuclear Information System (INIS)

Li Mingzhong; Zhang Xiaomin; Liang Yue; Man Yongzai; Zhou Pizhang

1995-01-01

A Nd: YLF laser is pumped by home-made quantum well diode lasers. Datum of laser output energy 60 μJ and peak power 120 mw are observed at wavelength 1.047 μm. On the same pumping condition, the output power synchronously pumped by two diodes is higher than the total output power pumped by two diodes separately. The fluctuation is <3%. The results agree with theoretical analysis

Ultrastrong light-matter coupling in electrically doped microcavity organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Mazzeo, M., E-mail: marco.mazzeo@unisalento.it [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Genco, A. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); Gambino, S. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy); Ballarini, D.; Mangione, F.; Sanvitto, D. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Di Stefano, O.; Patanè, S.; Savasta, S. [Dipartimento di Fisica e Scienze della Terra, Università di Messina, Viale F. Stagno d' Alcontres 31, 98166 Messina (Italy); Gigli, G. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy)

2014-06-09

The coupling of the electromagnetic field with an electronic transition gives rise, for strong enough light-matter interactions, to hybrid states called exciton-polaritons. When the energy exchanged between light and matter becomes a significant fraction of the material transition energy an extreme optical regime called ultrastrong coupling (USC) is achieved. We report a microcavity embedded p-i-n monolithic organic light emitting diode working in USC, employing a thin film of squaraine dye as active layer. A normalized coupling ratio of 30% has been achieved at room temperature. These USC devices exhibit a dispersion-less angle-resolved electroluminescence that can be exploited for the realization of innovative optoelectronic devices. Our results may open the way towards electrically pumped polariton lasers.

Evaluation of light-emitting diode beacon light fixtures.

Science.gov (United States)

2009-12-01

Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

MONJU fuel pin performance analysis

International Nuclear Information System (INIS)

Kitagawa, H.; Yamanaka, T.; Hayashi, H.

1979-01-01

Monju fuel pin has almost the same properties as other LMFBR fuel pins, i.e. Phenix, PFR, CRBR, but would be irradiated under severe conditions: maximum linear heat rate of 381 watt/cm, hot spot cladding temperature of 675 deg C, peak burnup of 131,000 MWd/t, peak fluence (E greater than 0.1 MeV) of 2.3 10 23 n/cm 2 . In order to understand in-core performance of Monju fuel pin, its thermal and mechanical behaviour was predicted using the fast running performance code SIMPLE. The code takes into account pellet-cladding interaction due to thermal expansion and swelling, gap conductance, structural changes of fuel pellets, fission product gas release with burnup and temperature increase, swelling and creep of fuel pellets, corrosion of cladding due to sodium flow and chemical attack by fission products, and cumulative damage of the cladding due to thermal creep

Flux pinning characteristics of YBCO coated conductor

International Nuclear Information System (INIS)

Matsushita, T.; Watanabe, T.; Fukumoto, Y.; Yamauchi, K.; Kiuchi, M.; Otabe, E.S.; Kiss, T.; Watanabe, T.; Miyata, S.; Ibi, A.; Muroga, T.; Yamada, Y.; Shiohara, Y.

2005-01-01

Flux pinning properties of PLD-processed YBCO coated conductors deposited on IBAD substrate are investigated. The thickness of YBCO layer is changed in the range of 0.27-1.0 μm. The thickness dependence of critical current density, n-value and irreversibility field are measured in a wide range of magnetic field. The results are compared with the theoretical flux creep-flow model. It is found that these pinning properties are strongly influenced by the thickness as well as the pinning strength. Optimum condition for high field application of this superconductor is discussed

Clinical and histomorphometrical study on titanium dioxide-coated external fixation pins.

Science.gov (United States)

Koseki, Hironobu; Asahara, Tomohiko; Shida, Takayuki; Yoda, Itaru; Horiuchi, Hidehiko; Baba, Koumei; Osaki, Makoto

2013-01-01

Pin site infection is the most common and significant complication of external fixation. In this work, the efficacy of pins coated with titanium dioxide (TiO(2)) for inhibition of infection was compared with that of stainless steel control pins in an in vivo study. Pins contaminated with an identifiable Staphylococcus aureus strain were inserted into femoral bone in a rat model and exposed to ultraviolet A light for 30 minutes. On day 14, the animals were sacrificed and the bone and soft tissue around the pin were retrieved. The clinical findings and histological findings were evaluated in 60 samples. Clinical signs of infection were present in 76.7% of untreated pins, but in only 36.7% of TiO(2)-coated pins. The histological bone infection score and planimetric rate of occupation for bacterial colonies and neutrophils in the TiO(2)-coated pin group were lower than those in the control group. The bone-implant contact ratio of the TiO(2)-coated pin group was significantly higher (71.4%) than in the control pin group (58.2%). The TiO(2) was successful in decreasing infection both clinically and histomorphometrically. The photocatalytic bactericidal effect of TiO(2) is thought to be useful for inhibiting pin site infection after external fixation.

Synchronizability on complex networks via pinning control

Indian Academy of Sciences (India)

Keywords. Complex network; the pinning synchronization; synchronizability. ... The findings reveal the relationship between the decreasing speed of maximum eigenvalue sequence of the principal submatrices for coupling matrix and the synchronizability on complex networks via pinning control. We discuss the ...

The "Good, Bad and Ugly" pin site grading system: A reliable and memorable method for documenting and monitoring ring fixator pin sites.

Science.gov (United States)

Clint, S A; Eastwood, D M; Chasseaud, M; Calder, P R; Marsh, D R

2010-02-01

Although there is much in the literature regarding pin site infections, there is no accepted, validated method for documenting their state. We present a system for reliably labelling pin sites on any ring fixator construct and an easy-to-remember grading system to document the state of each pin site. Each site is graded in terms of erythema, pain and discharge to give a 3-point scale, named "Good", "Bad" and "Ugly" for ease of recall. This system was tested for intra- and inter-observer reproducibility. 15 patients undergoing elective limb reconstruction were recruited. A total of 218 pin sites were independently scored by 2 examiners. 82 were then re-examined later by the same examiners. 514 pin sites were felt to be "Good", 80 "Bad" and 6 "Ugly". The reproducibility of the system was found to be excellent. We feel our system gives a quick, reliable and reproducible method to monitor individual pin sites and their response to treatment. Crown Copyright 2009. Published by Elsevier Ltd. All rights reserved.

A pin-assisted retention technique for resin-bonded restorations.

Science.gov (United States)

Miara, P; Touati, B

1992-09-01

The value of pins for auxiliary retention has been demonstrated many times. The use of pins with resin-bonded restorations allows for improved aesthetics and less tooth reduction while increasing resistance to dislodging forces. Clinical and technical procedures for resin-bonded bridges with pin-assisted retention are presented.

Method and apparatus for enhancing vortex pinning by conformal crystal arrays

Science.gov (United States)

Janko, Boldizsar; Reichhardt, Cynthia; Reichhardt, Charles; Ray, Dipanjan

2015-07-14

Disclosed is a method and apparatus for strongly enhancing vortex pinning by conformal crystal arrays. The conformal crystal array is constructed by a conformal transformation of a hexagonal lattice, producing a non-uniform structure with a gradient where the local six-fold coordination of the pinning sites is preserved, and with an arching effect. The conformal pinning arrays produce significantly enhanced vortex pinning over a much wider range of field than that found for other vortex pinning geometries with an equivalent number of vortex pinning sites, such as random, square, and triangular.

The treatment of burnable poison pins in LWRWIMS

International Nuclear Information System (INIS)

Halsall, M.J.

1982-12-01

This report describes an investigation into the modelling approximations normally made when the LWR lattice code LWRWIMS is used for design calculations on assemblies containing burnable poison pins. Parameters investigated include energy group structure, intervals between calculations in MWd/te and spatial subdivision of the poison pins. An estimate is made of the effect of using pin-cell smearing with diffusion theory for the assembly geometry, instead of a more exact heterogeneous transport theory calculation. The influence on reactivity of the minor gadolinium isotopes 152, 154, 156, 158 and 160 in a poison pin dominated by the isotopes 155 and 157 is presented, and finally, recommendations on the use of LWRWIMS for this type of calculation are made. (author)

Assessment of pin-by-pin fission rate distribution within MOX/UO{sub 2} fuel assembly using MCNPX code

Energy Technology Data Exchange (ETDEWEB)

Louis, Heba Kareem; Amin, Esmat [Nuclear and Radiological Regulation Authority (NRRA), Cairo (Egypt). Safety Engineering Dept.

2016-03-15

The aim of the present paper is to assess the calculations of pin-by-pin group integrated fission rates within MOX/UO{sub 2} Fuel assemblies using the Monte Carlo code MCNP2.7c with two sets of the available latest nuclear data libraries used for calculating MOX-fueled systems. The data that are used in this paper are based on the benchmark by the NEA Nuclear Science Committee (NSC). The k{sub ∞} and absorption/fission reaction rates per isotope, k{sub eff} and pin-by-pin group integrated fission rates on 1/8 fraction of the geometry are determined. To assess the overall pin-by-pin fission rate distribution, the collective per cent error measures were investigated. The results of AVG, MRE and RMS error measures were less than 1 % error. The present results are compared with other participants using other Monte Carlo codes and with CEA results that were taken in the benchmark as reference. The results with ENDF/B-VI.6 are close to the results received by MVP (JENDL3.2) and SCALE 4.2 (JEF2.2). The results with ENDF/BVII.1 give higher values of k{sub ∞} reflecting the changes in the newer evaluations. In almost all results presented here, the MCNP calculated results with ENDF/B VII.1 should be considered more than those obtained by using other Monte Carlo codes and nuclear data libraries. The present calculations may be consider a reference for evaluating the numerical schemes in production code systems, as well as the global performance including cross-section data reduction methods as the calculations used continuous energy and no geometrical approximations.

Solution processed organic light-emitting diodes using the plasma cross-linking technology

Energy Technology Data Exchange (ETDEWEB)

He, Kongduo [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Liu, Yang [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China); Gong, Junyi; Zeng, Pan; Kong, Xun; Yang, Xilu; Yang, Cheng; Yu, Yan [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Liang, Rongqing [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China); Ou, Qiongrong, E-mail: qrou@fudan.edu.cn [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China)

2016-09-30

Highlights: • Mixed acetylene and Ar plasma treatment makes the organic film surface cross-linked. • The plasma treatment for 30 s does not affect the performance of OLEDs. • Cross-linking surface can resist rinsing and corrosion of organic solvent. • The surface morphology is nearly unchanged after plasma treatment. • The plasma cross-linking method can realize solution processed multilayer OLEDs. - Abstract: Solution processed multilayer organic light-emitting diodes (OLEDs) present challenges, especially regarding dissolution of the first layer during deposition of a second layer. In this work, we first demonstrated a plasma cross-linking technology to produce a solution processed OLED. The surfaces of organic films can be cross-linked after mixed acetylene and Ar plasma treatment for several tens of seconds and resist corrosion of organic solvent. The film thickness and surface morphology of emissive layers (EMLs) with plasma treatment and subsequently spin-rinsed with chlorobenzene are nearly unchanged. The solution processed triple-layer OLED is successfully fabricated and the current efficiency increases 50% than that of the double-layer OLED. Fluorescent characteristics of EMLs are also observed to investigate factors influencing the efficiency of the triple-layer OLED. Plasma cross-linking technology may open up a new pathway towards fabrication of all-solution processed multilayer OLEDs and other soft electronic devices.

New Universal Tribometer as Pin or Ball-on-Disc and Reciprocating Pin-on-Plate Types

Directory of Open Access Journals (Sweden)

H. Kaleli

2016-06-01

Full Text Available The present paper contains a description of a new Universal Tribometer design which enables simulation of different contact and test types such as pin-on-disc, ball-on-disc and linear reciprocating tests. There are many models of wear Tribometer in the world market. These devices are manufactured by various companies abroad and are imported to our country. Cost of this devices start from 50.000 euros and goes to hundreds of thousands of euros. One of the most commonly used of this device is Reciprocating Pin-on-Plate Tribo Test Machine. This wear tester is produced at a low limited cost within the KAP (Scientifical Research Project Coordinator of Yıldız Technical University. The test machine can work including three types of Tribotest rigs (Reciprocating Pin-on-Plate, Pin-on-Disc and Ball-on-Disc. It is designed to operate also at high temperatures up to 500 ˚C. The new piece of equipment allows instrumented tribological testing of piston ring and cylinder liner samples at low and high temperatures and boundary lubrication conditions of any typical gasoline or Diesel engines. Some friction results were shown in boundary lubricating conditions between piston ring and cylinder liner sliding pairs describing Tribotest machine is driven by AC servo motor which is more accurate than DC motor.

Postirradiation examinations of fuel pins from the GCFR F-1 series of mixed-oxide fuel pins at 5.5 at. % burnup

International Nuclear Information System (INIS)

Strain, R.V.; Johnson, C.E.

1978-05-01

Postirradiation examinations were performed on five fuel pins from the Gas-Cooled Fast-Breeder Reactor F-1 experiment irradiated in EBR-II to a peak burnup of approximately 5.5 at. %. These encapsulated fuel pins were irradiated at peak-power linear ratings from approximately 13 to 15 kW/ft and peak cladding inside diameter temperatures from approximately 625 to 760 0 C. The maximum diametral change that occurred during irradiation was 0.2% ΔD/D 0 . The maximum fuel-cladding chemical interaction depth was 2.6 mils in fuel pin G-1 and 1 mil or less in the other three pins examined destructively. Significant migration of the volatile fission products occurred axially to the fuel-blanket interfaces. Teh postirradiation examination data indicate that fuel melted at the inner surface of the annular fuel pellets in the two highest power rating fuel pins, but little axial movement of fuel occurred

Postirradiation examinations of fuel pins from the GCFR F-1 series of mixed-oxide fuel pins at 5. 5 at. % burnup

Energy Technology Data Exchange (ETDEWEB)

Strain, R V; Johnson, C E

1978-05-01

Postirradiation examinations were performed on five fuel pins from the Gas-Cooled Fast-Breeder Reactor F-1 experiment irradiated in EBR-II to a peak burnup of approximately 5.5 at. %. These encapsulated fuel pins were irradiated at peak-power linear ratings from approximately 13 to 15 kW/ft and peak cladding inside diameter temperatures from approximately 625 to 760/sup 0/C. The maximum diametral change that occurred during irradiation was 0.2% ..delta..D/D/sub 0/. The maximum fuel-cladding chemical interaction depth was 2.6 mils in fuel pin G-1 and 1 mil or less in the other three pins examined destructively. Significant migration of the volatile fission products occurred axially to the fuel-blanket interfaces. Teh postirradiation examination data indicate that fuel melted at the inner surface of the annular fuel pellets in the two highest power rating fuel pins, but little axial movement of fuel occurred.

Primary hip spica with crossed retrograde intramedullary rush pins ...

African Journals Online (AJOL)

Bursitis and penetration of pins at the site of Rush pin insertion is a complication associated with this method of treatment. Conclusion: Closed reduction and internal fixation with crossed Rush pins was a superior treatment method in terms of early weight bearing and restoration of normal anatomy. Keywords: Femoral ...

Complications after pinning of supracondylar distal humerus fractures.

Science.gov (United States)

Bashyal, Ravi K; Chu, Jennifer Y; Schoenecker, Perry L; Dobbs, Matthew B; Luhmann, Scott J; Gordon, J Eric

2009-01-01

Supracondylar distal humerus fractures are one of the most common skeletal injuries in children. The current treatment of choice in North America is closed reduction and percutaneous pin fixation. Often surgeons leave the pins exposed beneath a cast but outside the skin. Great variation exists with respect to preoperative skin preparation, and perioperative antibiotic administration. Few data exist regarding the rate of infection and other complications. The purpose of this study is to review a large series of children to evaluate the rate of infection and other complications. A retrospective review was carried out of all patients treated at our institution over an 11-year period. A total of 622 patients were identified that were followed for a minimum of 2 weeks after pin removal. Seventeen patients had flexion-type fractures, 294 had type II fractures, and 311 had type III fractures. Seventy-four fractures (11.9%) had preoperative nerve deficits with anterior interosseous palsies being the most common (33 fractures, 5.3%). Preoperative antibiotics were given to 163 patients (26.2%). Spray and towel draping were used in 362 patients, paint and towel draping were used in 65 patients, alcohol paint and towel draping were used in 146 patients, and a full preparation and draping were used in 13 patients. The pins were left exposed under the cast in 591 fractures (95%), and buried beneath the skin in 31 fractures (5.0%). A medial pin was placed in 311 fractures with a small incision made to aid placement in 18 of these cases. The most common complication was pin migration necessitating unexpected return to the operating room for pin removal in 11 patients (1.8%). One patient developed a deep infection with septic arthritis and osteomyelitis (0.2%). Five additional patients had superficial skin infections and were treated with oral antibiotics for a total infection rate of 6 of 622 patients (1.0%). One patient ultimately had a malunion and 4 others returned to the

A three-dimensional pin-wise analysis for CEA ejection accident

Energy Technology Data Exchange (ETDEWEB)

Park, Guen-Tae; Park, Min-Ho; Park, Jin-Woo; Um, Kil-Sup; Choi, Tong-Soo [KEPCO NF, Daejeon (Korea, Republic of)

2016-10-15

The ejection of a control element assembly (CEA) with high reactivity worth causes the sudden insertion of reactivity into the core. Immediately after the CEA ejection, the nuclear power of the reactor dramatically increases in an exponential behavior until the doppler effect becomes important and turns the reactivity balance and power down to lower levels. The 3-D CEA ejection analysis methodology has been developed using the multi-dimensional code coupling system, CHASER, which couples three dimensional core neutron kinetics code ASTRA, subchannel analysis code THALES, and fuel performance analysis code FROST using message passing interface (MPI). This paper presents the pin-by-pin level analysis result with the 3-D CEA ejection analysis methodology using the CHASER. The pin-by-pin level analysis consists of DNBR, enthalpy and Pellet/Clad Mechanical Interaction (PCMI) analysis. All the evaluations are simulated for APR1400 plant loaded with PLUS7 fuel. In this paper, the pin-by-pin analysis using the multidimensional core transient code, CHASER, is presented with respect to enthalpy, DNBR and PCMI for APR1400 plant loaded with PLUS7 fuel. For the pin-by-pin enthalpy and DNBR analysis, the quarter core for HFP case or 15 - 20 assemblies around the most severe assembly for part powers or HZP cases are selected. And PCMI calculation is performed for all the rods in the whole core during a conservative time period. The pin-by-pin analysis results show that the regulatory guidelines of CEA ejection accident are satisfied.

Statistics of dislocation pinning at localized obstacles

Energy Technology Data Exchange (ETDEWEB)

Dutta, A. [S. N. Bose National Centre for Basic Sciences, Salt Lake, Kolkata 700098 (India); Bhattacharya, M., E-mail: mishreyee@vecc.gov.in; Barat, P. [Variable Energy Cyclotron Centre, 1/AF Bidhannagar, Kolkata 700064 (India)

2014-10-14

Pinning of dislocations at nanosized obstacles like precipitates, voids, and bubbles is a crucial mechanism in the context of phenomena like hardening and creep. The interaction between such an obstacle and a dislocation is often studied at fundamental level by means of analytical tools, atomistic simulations, and finite element methods. Nevertheless, the information extracted from such studies cannot be utilized to its maximum extent on account of insufficient information about the underlying statistics of this process comprising a large number of dislocations and obstacles in a system. Here, we propose a new statistical approach, where the statistics of pinning of dislocations by idealized spherical obstacles is explored by taking into account the generalized size-distribution of the obstacles along with the dislocation density within a three-dimensional framework. Starting with a minimal set of material parameters, the framework employs the method of geometrical statistics with a few simple assumptions compatible with the real physical scenario. The application of this approach, in combination with the knowledge of fundamental dislocation-obstacle interactions, has successfully been demonstrated for dislocation pinning at nanovoids in neutron irradiated type 316-stainless steel in regard to the non-conservative motion of dislocations. An interesting phenomenon of transition from rare pinning to multiple pinning regimes with increasing irradiation temperature is revealed.

On the obstructions to non-Cliffordian pin structures

Energy Technology Data Exchange (ETDEWEB)

Chamblin, A. (Dept. of Applied Maths and Theoretical Physics, Univ. of Cambridge (United Kingdom))

1994-07-01

We derive the topological obstructions to the existence of non-Cliffordian pin structures on four-dimensional spacetimes. We apply these obstructions to the study of non-Cliffordian pin-Lorentz cobordism. We note that our method of derivation applies equally well in any dimension and in any signature, and we present a general format for calculating obstructions in these situations. Finally, we interpret the breakdown of pin structure and discuss the relevance of this to aspects of physics. (orig.)

Experimental Qualification of the Sleeved Pin Multilink Attachment for Divertor PFC's

International Nuclear Information System (INIS)

Poutanen, J.; McCallum, A.; Turner, A.; Merola, M.

2006-01-01

The latest design for connecting the limited life ITER divertor plasma facing components (PFC's) to the reusable cassette body is the so called sleeved pin multilink attachment. The connection is made by expanding a 43 mm diameter hollow AlBr pin inside the fixation holes of components of the cassette body and PFC by a swaging process. The multilink is an easy, safe and fast assembly method, but the original dismantling method of drilling out the pin was found troublesome. Therefore, in the latest attachment design a thin sleeve is incorporated between the pin and the holes, which makes it possible to dismantle the joint by simply pulling out the pin and sleeve sequentially. Experimental qualification of the new sleeved design is now proceeding. The aim of the experimental qualification is to prove that the sleeved design meets the requirements of load carrying capability, clearance free connection, and easy and safe removal. Associated analytical studies were performed to develop and verify theoretical models and correlations for use in design. Results from the experimental qualification will provide reference information for developing tools for making and removing the connection. Theoretical finite element models in association with the results of earlier test campaigns with nonsleeved design were used to determine pin expansion parameters. The expansion parameters were verified with plate-pin tests measuring contact pressures produced by pin expansion. The plate-pin tests were also used to demonstrate the feasibility of pin removal and develop pin removal methodology. The mechanical capabilities of the connection design are being examined with test series of cyclic tensile loading plus articulation-induced loading of a single connection mock-up. Remaking properties of the attachment are being studied with multiple swaging and removing of the pin into the fixation holes. Finally the dismantling of the connection will be examined with full length pin extraction

Improving Joint Formation and Tensile Properties of Dissimilar Friction Stir Welding of Aluminum and Magnesium Alloys by Solving the Pin Adhesion Problem

Science.gov (United States)

Liu, Zhenlei; Ji, Shude; Meng, Xiangchen

2018-03-01

Friction stir welding (FSW), as a solid-state welding technology invented by TWI in 1991, has potential to join dissimilar Al/Mg alloys. In this study, the pin adhesion phenomenon affecting joint quality during FSW of 6061-T6 aluminum and AZ31B magnesium alloys was investigated. The adhesion phenomenon induced by higher heat input easily transformed the tapered-and-screwed pin into a tapered pin, which greatly reduced the tool's ability to drive the plasticized materials and further deteriorated joint formation. Under the condition without the pin adhesion, the complex intercalated interlayer at the bottom of stir zone was beneficial to mechanical interlocking of Al/Mg alloys, improving tensile properties. However, the formation of intermetallic compounds was still the main reason of the joint fracture, significantly deteriorating tensile properties. Under the welding speed of 60 mm/min without the pin adhesion phenomenon, the maximum tensile strength of 107 MPa and elongation of 1.2% were achieved.

Coaxial foilless diode

OpenAIRE

Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

2014-01-01

A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

Dynamic Phases of Vortices in Superconductors with Periodic Pinning

International Nuclear Information System (INIS)

Reichhardt, C.; Olson, C.; Nori, F.

1997-01-01

We present results from extensive simulations of driven vortex lattices interacting with periodic arrays of pinning sites. Changing an applied driving force produces a rich variety of novel dynamical plastic flow phases which are very distinct from those observed in systems with random pinning arrays. Signatures of the transition between these different dynamical phases include sudden jumps in the current-voltage curves as well as marked changes in the vortex trajectories and vortex lattice order. Several dynamical phase diagrams are obtained as a function of commensurability, pinning strength, and spatial order of the pinning sites. copyright 1997 The American Physical Society

ITP Hanford Type 40 pin electrical connector failure analysis

International Nuclear Information System (INIS)

Imrich, K.J.

1993-01-01

Corrosion products observed on the ITP Hanford Type 40 pin electrical connectors would be expected to adversely affect the power and control signals supplied to process equipment in the filter cell by the connectors. Corrosion products were consistent with those found on similar pins in DWPF. The recommendations based on the findings in this investigation are as follows: (1) Replace male and female rhodium plated pins with gold plated pins. (2) Replace the galvanized carbon steel spring on the male connector with a stainless steel spring. (3) Install protective caps over Hanford connectors when jumpers are removed

Discovery of novel selenium derivatives as Pin1 inhibitors by high-throughput screening

International Nuclear Information System (INIS)

Subedi, Amit; Shimizu, Takeshi; Ryo, Akihide; Sanada, Emiko; Watanabe, Nobumoto; Osada, Hiroyuki

2016-01-01

Peptidyl prolyl cis/trans isomerization by Pin1 regulates various oncogenic signals during cancer progression, and its inhibition through multiple approaches has established Pin1 as a therapeutic target. However, lack of simplified screening systems has limited the discovery of potent Pin1 inhibitors. We utilized phosphorylation-dependent binding of Pin1 to its specific substrate to develop a screening system for Pin1 inhibitors. Using this system, we screened a chemical library, and identified a novel selenium derivative as Pin1 inhibitor. Based on structure-activity guided chemical synthesis, we developed more potent Pin1 inhibitors that inhibited cancer cell proliferation. -- Highlights: •Novel screening for Pin1 inhibitors based on Pin1 binding is developed. •A novel selenium compound is discovered as Pin1 inhibitor. •Activity guided chemical synthesis of selenium derivatives resulted potent Pin1 inhibitors.

Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

International Nuclear Information System (INIS)

Perez-Mendez, V.; Drewery, J.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.

1994-10-01

We describe the characteristics of thin (1 μm) and thick (>30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. Deposition techniques using helium dilution, which produce samples with low stress are described. Pixel arrays for flux exposures can be readout by transistor, single diode or two diode switches. Polysilicon charge sensitive pixel amplifiers for single event detection are described. Various applications in nuclear, particle physics, x-ray medical imaging, neutron crystallography, and radionuclide chromatography are discussed

Resistance projection welding small pins in vacuum tube feedthrough assembly

International Nuclear Information System (INIS)

Kuncz, F. Jr.

1980-01-01

Resistance projection welding of two stainless steel pins to a cup is successfully accomplished by specially designed electrodes and by forming domes on the pin ends. Details of electrode and pin construction are given, as well as welding parameters

PROCOPE, Collision Probability in Pin Clusters and Infinite Rod Lattices

International Nuclear Information System (INIS)

Amyot, L.; Daolio, C.; Benoist, P.

1984-01-01

1 - Nature of physical problem solved: Calculation of directional collision probabilities in pin clusters and infinite rod lattices. 2 - Method of solution: a) Gauss integration of analytical expressions for collision probabilities. b) alternately, an approximate closed expression (not involving integrals) may be used for pin-to-pin interactions. 3 - Restrictions on the complexity of the problem: number of fuel pins must be smaller than 62; maximum number of groups of symmetry is 300

Liquid-metal pin-fin pressure drop by correlation in cross flow

International Nuclear Information System (INIS)

Wang, Zhibi; Kuzay, T.M.; Assoufid, L.

1994-01-01

The pin-fin configuration is widely used as a heat transfer enhancement method in high-heat-flux applications. Recently, the pin-fin design with liquid-metal coolant was also applied to synchrotron-radiation beamline devices. This paper investigates the pressure drop in a pin-post design beamline mirror with liquid gallium as the coolant. Because the pin-post configuration is a relatively new concept, information in literature about pin-post mirrors or crystals is rare, and information about the pressure drop in pin-post mirrors with liquid metal as the coolant is even more sparse. Due to this the authors considered the cross flow in cylinder-array geometry, which is very similar to that of the pin-post, to examine the pressure drop correlation with liquid metals over pin fins. The cross flow of fluid with various fluid characteristics or properties through a tube bank was studied so that the results can be scaled to the pin-fin geometry with liquid metal as the coolant. Study lead to two major variables to influence the pressure drop: fluid properties, viscosity and density, and the relative length of the posts. Correlation of the pressure drop between long and short posts and the prediction of the pressure drop of liquid metal in the pin-post mirror and comparison with an existing experiment are addressed

Loss of Pin1 Suppresses Hedgehog-Driven Medulloblastoma Tumorigenesis

Directory of Open Access Journals (Sweden)

Tao Xu

2017-03-01

Full Text Available Medulloblastoma is the most common malignant brain tumor in children. Therapeutic approaches to medulloblastoma (combination of surgery, radiotherapy, and chemotherapy have led to significant improvements, but these are achieved at a high cost to quality of life. Alternative therapeutic approaches are needed. Genetic mutations leading to the activation of the Hedgehog pathway drive tumorigenesis in ~30% of medulloblastoma. In a yeast two-hybrid proteomic screen, we discovered a novel interaction between GLI1, a key transcription factor for the mediation of Hedgehog signals, and PIN1, a peptidylprolyl cis/trans isomerase that regulates the postphosphorylation fate of its targets. The GLI1/PIN1 interaction was validated by reciprocal pulldowns using epitope-tagged proteins in HEK293T cells as well as by co-immunoprecipiations of the endogenous proteins in a medulloblastoma cell line. Our results support a molecular model in which PIN1 promotes GLI1 protein abundance, thus contributing to the positive regulation of Hedgehog signals. Most importantly, in vivo functional analyses of Pin1 in the GFAP-tTA;TRE-SmoA1 mouse model of Hedgehog-driven medulloblastoma demonstrate that the loss of Pin1 impairs tumor development and dramatically increases survival. In summary, the discovery of the GLI1/PIN1 interaction uncovers PIN1 as a novel therapeutic target in Hedgehog-driven medulloblastoma tumorigenesis.

Study and fabrication of tunnel diodes made on germanium using a collective planar technique

International Nuclear Information System (INIS)

Vrahides, Michel

1973-01-01

The main results of the theory on tunnel diodes are presented in the first chapter. From these results are deduced the technological requirements that any fabrication process should meet to make tunnel diodes. These requirements show up that, among the three techniques for junction making (thermal diffusion of impurities, epitaxy, alloying), the last one is presently the best fitted to the fabrication of tunnel junctions. By analyzing the defects created by various alloying technologies presently used, together with a study of the benefits due to a use of chemical photolithography, evaporation under vacuum and masking by deposited oxide, it is possible to design a tentative scheme of a 0.5 ns tunnel diode. Then, in a second chapter, is presented the collective process for fabrication that has been used on monocrystalline, P-type, germanium wafers. 8 000 tunnel diodes may be positioned on a 1.5 inch diameter wafer by using that process. A description of the various apparatus used is also given. The experimental results are described in the third chapter. The influence of the various fabrication parameters on the electrical characteristics of the diodes are discussed. It is shown, by studying the fabrication yields and parameter spreading, that 80 per cent of the diodes exhibit a standard tunnel diode behaviour and that 90 per cent of these present a peak current dispersion less than ± 25 per cent. When measuring at the peak current drifts under temperature stresses, a good analogy with conventional tunnel diode is found. Some measurements of switching times have led to values as low as 0.6 nanoseconds. (author) [fr

Improved Retrieval Technique of pin-wise composition for spent fuel recycling

Energy Technology Data Exchange (ETDEWEB)

Park, YunSeo; Kim, Myung Hyun [Kyung Hee University , Yongin (Korea, Republic of)

2016-10-15

New reutilization method which does not require fabrication processing was suggested and showed feasibility by Dr. Aung Tharn Daing. This new reutilization method is predict spent nuclear fuel pin composition, reconstruct new fuel assembly by spent nuclear pin, and directly reutilize in same PWR core. There are some limitation to predict spent nuclear fuel pin composition on his methodology such as spatial effect was not considered enough. This research suggests improving Dr. Aung Tharn Daing's retrieval technique of pin-wise composition. This new method classify fuel pin groups by its location effect in fuel assembly. Most of fuel pin composition along to burnup in fuel assembly is not highly dependent on location. However, compositions of few fuel pins where near water hole and corner of fuel assembly are quite different in same burnup. Required number of nuclide table is slightly increased from 3 to 6 for one fuel assembly with this new method. Despite of this little change, prediction of the pin-wise composition became more accurate. This new method guarantees two advantages than previous retrieving technique. First, accurate pin-wise isotope prediction is possible by considering location effect in a fuel assembly. Second, it requires much less nuclide tables than using full single assembly database. Retrieving technique of pin-wise composition can be applied on spent fuel management field useful. This technique can be used on direct use of spent fuel such as Dr. Aung Tharn Daing showed or applied on pin-wise waste management instead of conventional assembly-wise waste management.

Progress in fuel pin modelling in the USA

Energy Technology Data Exchange (ETDEWEB)

Stephen, J D; Biancheria, A; Leibnitz, D; O' Reilly, B D; Liu, Y Y; Labar, M P; Gneiting, B C [General Electric Company, Sunnyvale, CA (United States)

1979-12-01

In the USA, the focus for theoretical fuel pin modeling is the LIFE system. This system of codes, algorithms, criteria and analysis guidelines is intended to provide a common basis for communication amongst the development groups, a reference set of analysis guidelines for design, and eventually a consensus on the state-of-the-art for licensing. The technical objective is to predict the effect of design options on fuel pin performance limits, which include fuel temperature, pin deformation and cladding breach during normal operation and design basis transients. The mechanistic approach to modeling is taken in LIFE to the extent possible. That is, the approach is to describe the key phenomena in sufficient detail to provide a fundamental understanding of their synergistic effect on the fuel pin performance limits.

PIN architecture for ultrasensitive organic thin film photoconductors.

Science.gov (United States)

Jin, Zhiwen; Wang, Jizheng

2014-06-17

Organic thin film photoconductors (OTFPs) are expected to have wide applications in the field of optical communications, artificial vision and biomedical sensing due to their great advantages of high flexibility and low-cost large-area fabrication. However, their performances are not satisfactory at present: the value of responsivity (R), the parameter that measures the sensitivity of a photoconductor to light, is below 1 AW(-1). We believe such poor performance is resulted from an intrinsic self-limited effect of present bare blend based device structure. Here we designed a PIN architecture for OTFPs, the PIN device exhibits a significantly improved high R value of 96.5 AW(-1). The PIN architecture and the performance the PIN device shows here should represent an important step in the development of OTFPs.

Investigation of pinning in MgB2 superconductors

International Nuclear Information System (INIS)

Mohammad, S.; Reissner, M.; Steiner, W.; Bauer, E.; Giovannini, M.

2006-01-01

Full text: The pinning behaviour of bulk MgB 2 superconductors is peculiar in many respects. Pinning seems to be stronger than in classical high T C materials and there seems to be no weak link problem in these compounds, giving hope to produce bulk samples and wires with current densities appropriate for technical applications. But, although many studies concerning the pinning behaviour in this compound appeared in recent years, the results are still contradictory. In the present work we present results of an investigation of the pinning behaviour by magnetic relaxation measurements of three MgB 2 samples: a pure one, a sample with 8 at% Al substitution and a sample with 10 wt% of SiC admixture. A comparison of different analyses methods is given. (author)

TCAD simulation for alpha-particle spectroscopy using SIC Schottky diode.

Science.gov (United States)

Das, Achintya; Duttagupta, Siddhartha P

2015-12-01

There is a growing requirement of alpha spectroscopy in the fields context of environmental radioactive contamination, nuclear waste management, site decommissioning and decontamination. Although silicon-based alpha-particle detection technology is mature, high leakage current, low displacement threshold and radiation hardness limits the operation of the detector in harsh environments. Silicon carbide (SiC) is considered to be excellent material for radiation detection application due to its high band gap, high displacement threshold and high thermal conductivity. In this report, an alpha-particle-induced electron-hole pair generation model for a reverse-biased n-type SiC Schottky diode has been proposed and verified using technology computer aided design (TCAD) simulations. First, the forward-biased I-V characteristics were studied to determine the diode ideality factor and compared with published experimental data. The ideality factor was found to be in the range of 1.4-1.7 for a corresponding temperature range of 300-500 K. Next, the energy-dependent, alpha-particle-induced EHP generation model parameters were optimised using transport of ions in matter (TRIM) simulation. Finally, the transient pulses generated due to alpha-particle bombardment were analysed for (1) different diode temperatures (300-500 K), (2) different incident alpha-particle energies (1-5 MeV), (3) different reverse bias voltages of the 4H-SiC-based Schottky diode (-50 to -250 V) and (4) different angles of incidence of the alpha particle (0°-70°).The above model can be extended to other (wide band-gap semiconductor) device technologies useful for radiation-sensing application. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Wear-Induced Changes in FSW Tool Pin Profile: Effect of Process Parameters

Science.gov (United States)

Sahlot, Pankaj; Jha, Kaushal; Dey, G. K.; Arora, Amit

2018-06-01

Friction stir welding (FSW) of high melting point metallic (HMPM) materials has limited application due to tool wear and relatively short tool life. Tool wear changes the profile of the tool pin and adversely affects weld properties. A quantitative understanding of tool wear and tool pin profile is crucial to develop the process for joining of HMPM materials. Here we present a quantitative wear study of H13 steel tool pin profile for FSW of CuCrZr alloy. The tool pin profile is analyzed at multiple traverse distances for welding with various tool rotational and traverse speeds. The results indicate that measured wear depth is small near the pin root and significantly increases towards the tip. Near the pin tip, wear depth increases with increase in tool rotational speed. However, change in wear depth near the pin root is minimal. Wear depth also increases with decrease in tool traverse speeds. Tool pin wear from the bottom results in pin length reduction, which is greater for higher tool rotational speeds, and longer traverse distances. The pin profile changes due to wear and result in root defect for long traverse distance. This quantitative understanding of tool wear would be helpful to estimate tool wear, optimize process parameters, and tool pin shape during FSW of HMPM materials.

Trending on Pinterest: an examination of pins about skin tanning.

Science.gov (United States)

Banerjee, Smita C; Rodríguez, Vivian M; Greene, Kathryn; Hay, Jennifer L

2018-04-10

Rates of melanoma and nonmelanoma skin cancers are on the rise in the USA with data revealing disproportionate increase in female young adults. The popularity of intentional skin tanning among U.S. adolescents is attributed to several factors, including prioritization of physical appearance, media images of tanned celebrities, ease of availability of artificial tanning facilities, and more recently, the prevalence and celebration of tanned skin on social media. Pinterest, as the third most popular social media platform, was searched for "pins" about skin tanning. The resultant "pins" were examined to understand the extent and characteristics of skin tanning portrayed on Pinterest. We analyzed pins on Pinterest about skin tanning (n = 501) through a quantitative content analysis. Overall, results indicated an overwhelmingly protanning characteristic of pins about skin tanning on Pinterest, with over 85% of pins promoting tanning behavior. The pins were generally characterized by the portrayal of a female subject (61%) and provided positive reinforcement for tanning (49%). Use of tanning for enhancing appearance was the main positive outcome expectancy portrayed in the pins (35%), and nudity or exposure of skin on arms (32%) and legs (31%) was evident in about a third of pins. With overwhelmingly positive pins promoting tanning, use of female subjects, exhibiting nudity, and appearance enhancement, there seems be to a consistent targeting of female users to accept tanning as a socially acceptable and popular behavior. The findings indicate a need for developing sun protection messages and the leveraging of social media for dissemination of skin cancer prevention and detection messages.

On the suitability of P Si-PIN detectors in transmission experiments

International Nuclear Information System (INIS)

Murty, V.R.K.; Devan, K.R.S.

2000-01-01

There has been considerable interest, in the recent past, in the development of detector technology. In this context, new detectors, especially room temperature operated detectors and inexpensive cooling systems have recently entered the market. These new systems replace the old systems where there are inadequate facilities to operate them to achieve superior performance. Such performance capabilities of different systems, on a comparative basis have not been widely published in the recent past. In this direction, the Peltier cooled detectors have entered the market and are replacing the conventional Si(Li) detectors. In between the conventional Si(Li) detectors and Peltier cooled Si-PIN detectors, the freolectric cooled Si(Li) detectors were also used in Radiation Physics applications. In this paper, the performance of the Peltier cooled Si-PIN detector in comparison with a Freolectric cooled Si(Li) detector has been studied in Transmission experiments to evaluate the total cross sections at low energies and the results are discussed. (author)

Effective augmentation of networked systems and enhancing pinning controllability

Science.gov (United States)

Jalili, Mahdi

2018-06-01

Controlling dynamics of networked systems to a reference state, known as pinning control, has many applications in science and engineering. In this paper, we introduce a method for effective augmentation of networked systems, while also providing high levels of pinning controllability for the final augmented network. The problem is how to connect a sub-network to an already existing network such that the pinning controllability is maximised. We consider the eigenratio of the augmented Laplacian matrix as a pinning controllability metric, and use graph perturbation theory to approximate the influence of edge addition on the eigenratio. The proposed metric can be effectively used to find the inter-network links connecting the disjoint networks. Also, an efficient link rewiring approach is proposed to further optimise the pinning controllability of the augmented network. We provide numerical simulations on synthetic networks and show that the proposed method is more effective than heuristic ones.

Reconstruction calculation of pin power for ship reactor core

International Nuclear Information System (INIS)

Li Haofeng; Shang Xueli; Chen Wenzhen; Wang Qiao

2010-01-01

Aiming at the limitation of the software that pin power distribution for ship reactor core was unavailable, the calculation model and method of the axial and radial pin power distribution were proposed. Reconstruction calculations of pin power along axis and radius was carried out by bicubic and bilinear interpolation and cubic spline interpolation, respectively. The results were compared with those obtained by professional reactor physical soft with fine mesh difference. It is shown that our reconstruction calculation of pin power is simple and reliable as well as accurate, which provides an important theoretic base for the safety analysis and operating administration of the ship nuclear reactor. (authors)

Efficient organic light emitting-diodes (OLEDs)

CERN Document Server

Chang, Yi-Lu

2015-01-01

Following two decades of intense research globally, the organic light-emitting diode (OLED) has steadily emerged as the ultimate display technology of choice for the coming decades. Portable active matrix OLED displays have already become prevalent, and even large-sized ultra-high definition 4K TVs are being mass-produced. More exotic applications such as wearable displays have been commercialized recently. With the burgeoning success in displays, researchers are actively bringing the technology forward into the exciting solid-state lighting market. This book presents the knowledge needed for

Vortex Avalanches with Periodic Arrays of Pinning Sites

Science.gov (United States)

Abbas, J.; Heckel, T.; Kakalios, J.

2001-03-01

Numerical simulations by Nori and co-workers of dynamical phase transitions for magnetic vortices in type II superconductors when the defects which act as pinning sites are arranged in a periodic array have found a dramatic non-linear relationship between vortex voltage and driving current.2,4 In order to experimentally test the predictions of these simulations, a macroscopic physical analog of an array of flux vortices in the presense of an ordered lattice of pinning sites has been constructed. This simple table-top experimental system consists of conventional household magnets, arranged in an ordered grid (serving as the lattice of fixed pinning centers). A plexiglass sheet is positioned above these fixed magnets, and another collection of magnets (representing the magnetic flux vortices), oriented so that they are attracted to the fixed magnets are placed on top of the sheet. The entire apparatus is then tilted to a given angle (the analog of the driving voltage) and the velocity of the avalanching magnets is recorded using the induced voltage in a pick-up coil. By varying the ratio of movable magnets to fixed pinning magnets, the filling fraction can be adjusted, as can the pinning strength, by adjusting the separation of the plexiglass sheet between the fixed and movable magnets. The velocity of the avalanching magnets as the filling fraction is varied displays a jamming transition, with a non-trivial dependence on the pinning strength of the lattice of fixed magnets below the sheet.

Analysis of three idealized reactor configurations: plate, pin, and homogeneous

International Nuclear Information System (INIS)

McKnight, R.D.

1983-01-01

Detailed Monte Carlo calculations have been performed for three distinct configurations of an idealized fast critical assembly. This idealized assembly was based on the LMFBR benchmark critical assembly ZPR-6/7. In the first configuration, the entire core was loaded with the plate unit cell of ZPR-6/7. In the second configuration, the entire core was loaded with the ZPR sodium-filled pin calandria. The actual ZPR pin calandria are loaded with mixed (U,Pu) oxide pins which closely match the composition of the ZPR-6/7 plate unit cell. For the present study, slight adjustments were made in the atom concentrations and the length of the pin calandria in order to make the core boundaries and average composition for the pin-cell configuration identical to those of the plate-cell configuration. In the third configuration, the core was homogeneous, again with identical core boundaries and average composition as the plate and pin configurations

Optimal pin enrichment distributions in nuclear reactor fuel bundles

International Nuclear Information System (INIS)

Lim, E.Y.

1976-01-01

A methodology has been developed to determine the fuel pin enrichment distribution that yields the best approximation to a prescribed power distribution in nuclear reactor fuel bundles. The problem is formulated as an optimization problem in which the optimal pin enrichments minimize the sum of squared deviations between the actual and prescribed fuel pin powers. A constant average enrichment constraint is imposed to ensure that a suitable value of reactivity is present in the bundle. When constraints are added that limit the fuel pins to a few enrichment types, one must determine not only the optimal values of the enrichment types but also the optimal distribution of the enrichment types amongst the pins. A matrix of boolean variables is used to describe the assignment of enrichment types to the pins. This nonlinear mixed integer programming problem may be rigorously solved with either exhaustive enumeration or branch and bound methods using a modification of the algorithm from the continuous problem as a suboptimization. Unfortunately these methods are extremely cumbersome and computationally overwhelming. Solutions which require only a moderate computational effort are obtained by assuming that the fuel pin enrichments in this problem are ordered as in the solution to the continuous problem. Under this assumption search schemes using either exhaustive enumeration or branch and bound become computationally attractive. An adaptation of the Hooke--Jeeves pattern search technique is shown to be especially efficient

How Helpful is Colour-Cueing of PIN Entry?

OpenAIRE

Renaud, Karen; Ramsay, Judith

2014-01-01

21st Century citizens are faced with the need to remember numbers of PINs (Personal Identification Numbers) in order to do their daily business, and they often have difficulties due to human memory limitations. One way of helping them could be by providing cues during the PIN entry process. The provision of cues that would only be helpful to the PIN owner is challenging because the cue should only make sense to the legitimate user, and not to a random observer. In this paper we report on an e...

Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35 µm technology

Energy Technology Data Exchange (ETDEWEB)

Pellion, D.; Jradi, K.; Brochard, N. [Le2i – CNRS/Univ. de Bourgogne, Dijon (France); Prêle, D. [APC – CNRS/Univ. Paris Diderot, Paris (France); Ginhac, D. [Le2i – CNRS/Univ. de Bourgogne, Dijon (France)

2015-07-01

Some decades ago single photon detection used to be the terrain of photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several disadvantages such as low quantum efficiency, overall dimensions, and cost, making them unsuitable for compact design of integrated systems. So, the past decade has seen a dramatic increase in interest in new integrated single-photon detectors called Single-Photon Avalanche Diodes (SPAD) or Geiger-mode APD. SPAD are working in avalanche mode above the breakdown level. When an incident photon is captured, a very fast avalanche is triggered, generating an easily detectable current pulse. This paper discusses SPAD detectors fabricated in a standard CMOS technology featuring both single-photon sensitivity, and excellent timing resolution, while guaranteeing a high integration. In this work, we investigate the design of SPAD detectors using the AMS 0.35 µm CMOS Opto technology. Indeed, such standard CMOS technology allows producing large surface (few mm{sup 2}) of single photon sensitive detectors. Moreover, SPAD in CMOS technologies could be associated to electronic readout such as active quenching, digital to analog converter, memories and any specific processing required to build efficient calorimeters (Silicon PhotoMultiplier – SiPM) or high resolution imagers (SPAD imager). The present work investigates SPAD geometry. MOS transistor has been used instead of resistor to adjust the quenching resistance and find optimum value. From this first set of results, a detailed study of the dark count rate (DCR) has been conducted. Our results show a dark count rate increase with the size of the photodiodes and the temperature (at T=22.5 °C, the DCR of a 10 µm-photodiode is 2020 count s{sup −1} while it is 270 count s{sup −1} at T=−40 °C for a overvoltage of 800 mV). A small pixel size is desirable, because the DCR per unit area decreases with the pixel size. We also found that the adjustment

Sodium erosion of boron carbide from breached absorber pins

International Nuclear Information System (INIS)

Basmajian, J.A.; Baker, D.E.

1981-03-01

The purpose of the irradiation experiment was to provide an engineering demonstration of the irradiation behavior of breached boron carbide absorber pins. By building defects into the cladding of prototypic absorber pins, and performing the irradiation under typical FFTF operating conditions, a qualitative assessment of the consequences of a breach was achieved. Additionally, a direct comparison of pin behavior with that of the ex-reactor test could be made

Theory of activated glassy dynamics in randomly pinned fluids

Science.gov (United States)

Phan, Anh D.; Schweizer, Kenneth S.

2018-02-01

We generalize the force-level, microscopic, Nonlinear Langevin Equation (NLE) theory and its elastically collective generalization [elastically collective nonlinear Langevin equation (ECNLE) theory] of activated dynamics in bulk spherical particle liquids to address the influence of random particle pinning on structural relaxation. The simplest neutral confinement model is analyzed for hard spheres where there is no change of the equilibrium pair structure upon particle pinning. As the pinned fraction grows, cage scale dynamical constraints are intensified in a manner that increases with density. This results in the mobile particles becoming more transiently localized, with increases of the jump distance, cage scale barrier, and NLE theory mean hopping time; subtle changes of the dynamic shear modulus are predicted. The results are contrasted with recent simulations. Similarities in relaxation behavior are identified in the dynamic precursor regime, including a roughly exponential, or weakly supra-exponential, growth of the alpha time with pinning fraction and a reduction of dynamic fragility. However, the increase of the alpha time with pinning predicted by the local NLE theory is too small and severely so at very high volume fractions. The strong deviations are argued to be due to the longer range collective elasticity aspect of the problem which is expected to be modified by random pinning in a complex manner. A qualitative physical scenario is offered for how the three distinct aspects that quantify the elastic barrier may change with pinning. ECNLE theory calculations of the alpha time are then presented based on the simplest effective-medium-like treatment for how random pinning modifies the elastic barrier. The results appear to be consistent with most, but not all, trends seen in recent simulations. Key open problems are discussed with regard to both theory and simulation.

The effects of design parameters on vortex diode pump performance, 2

International Nuclear Information System (INIS)

Yoshitomi, Hideki; Koizumi, Tadao; Muroyama, Kenichi; Wada, Tsutomu.

1989-01-01

A fluidic pump with two vortex diodes is a new technology for transporting dangerous corrosive fluids without the use of moving parts. The pump can be connected with the discharge tank through series and cascade connections. In the previous report, we described the fundamentals and design criteria of the pump for the series connection case. This study has been performed with the same object as the previous work for the case of cascade connection. First, we present the basic pump characteristics with some dimensionless performance factors by analyzing the pump model. Then, the effects of the cylinder volumetric coefficient, driving pressure, suction-diode-to-delivery-diode-passage-area ratio and reverse-flow-to-forward-flow-resistance ratio of the vortex diode are investigated. As a result, the characteristic difference between series and cascade connections is clarified. Basic ways to decide the value of each performance factor are suggested. (author)

Incidence and risk factors for pin tract infection in external fixation of ...

African Journals Online (AJOL)

Incidence and risk factors for pin tract infection in external fixation of fractures ... for pin tract infection, there were 93 pins scored grade 1, 32 pins grade 2, 15 ... The incidence increased from 20.5% in closed fractures to 75.9% in open fractures.

Displaced humeral lateral condyle fractures in children: should we bury the pins?

Science.gov (United States)

Das De, Soumen; Bae, Donald S; Waters, Peter M

2012-09-01

The purpose of this investigation was to determine if leaving Kirschner wires exposed is more cost-effective than burying them subcutaneously after open reduction and internal fixation (ORIF) of humeral lateral condyle fractures. A retrospective cohort study of all lateral condyle fractures treated over a 10-year period at a single institution was performed. Data on surgical technique, fracture healing, and complications were analyzed, as well as treatment costs. A decision analysis model was then constructed to compare the strategies of leaving the pins exposed versus buried. Finally, sensitivity analyses were performed, assessing cost-effectiveness when infection rates and costs of treating deep infections were varied. A total of 235 children with displaced fractures were treated with ORIF using Kirschner wires. Pins were left exposed in 41 cases (17.4%) and buried in 194 cases (82.6%); the age, sex, injury mechanisms, and fracture patterns were similar in both the groups. The median time to removal of implants was shorter with exposed versus buried pins (4 vs. 6 wk, Pfracture union or loss of reduction rates. The rate of superficial infection was higher with exposed pins (9.8% vs. 3.1%), but this was not statistically significant (P=0.076). There were no deep infections with exposed pins, whereas the rate of deep infection was 0.5% with buried pins (P=1.00). Buried pins were associated with additional complications, including symptomatic implants (7.2%); pins protruding through the skin (16%); internal pin migration necessitating additional surgery (1%); and skin necrosis (1%). The decision analysis revealed that leaving pins exposed resulted in an average cost savings of $3442 per patient. This strategy remained cost-effective even when infection rates with exposed pins approached 40%. Leaving the pins exposed after ORIF of lateral condyle fractures is safe and more cost-effective than burying the pins subcutaneously. Retrospective cohort study (level III).

Coaxial foilless diode

Energy Technology Data Exchange (ETDEWEB)

Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng [College of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China)

2014-05-15

A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

FFTF/IEM cell fuel pin weighing system

International Nuclear Information System (INIS)

Gibbons, P.W.

1987-01-01

The Interim Examination and Maintenance (IEM) cell in the Fast Flux Test Facility (FFTF) is used for remote disassembly of irradiated fuel and materials experiments. For those fuel experiments where the FFTF tag-gas detection system has indicated a fuel pin cladding breach, a weighing system is used in identifying that fuel pin with a reduced weight due to the escape of gaseous and volatile fission products. A fuel pin weighing machine, originally purchased for use in the Fuels and Materials Examination Facility (FMEF), was the basis for the IEM cell system. Design modifications to the original equipment were centered around adapting the machine to the differences between the two facilities and correcting deficiencies discovered during functional testing in the IEM cell mock-up

Design fix for vibration-induced wear in fuel pin bundles

International Nuclear Information System (INIS)

Naas, D.F.; Heck, E.N.

1976-01-01

In summary, results at 45,000 MWd/MTM burnup from the FFTF mixed oxide fuel pin irradiation tests in EBR-II show that reduction of the initial fuel pin bundle clearance and use of 20 percent cold-worked stainless steel ducts virtually eliminate vibration and wear observed in an initial series of 61-pin tests

Effect of cathode and anode plasma motion on current characteristics of pinch diode

International Nuclear Information System (INIS)

Yang Hailiang; Qiu Aici; Sun Jianfeng; Li Jingya; He Xiaoping; Tang Junping; Li Hongyu; Wang Haiyang; Huang Jianjun; Ren Shuqing; Yang Li; Zou Lili

2005-01-01

The preliminary research results for the effect of cathode and anode plasma motion on current characteristics of the pinch ion diode on FLASH II accelerator are reported. The structure and principle of pinch reflex ion beam diode are introduced. The time dependent evolution of electron and ion flow in large aspect-ratio relativistic diodes is studied by analytic models. The equation of Child-langmuir, weak focused-flow, strong focused-flow and parapotential flow are corrected to reduce the diode A-C gap caused by the motion of cathode and anode plasma. The diode current and ion current are calculated with these corrected equations, and the results are consistent with the experimental data. The methods of increasing ion current and efficiency are also presented. The high power ion beam peak current about 160 kA with a peak energy about 500 keV was produced using water-dielectric transmission-line generators with super-pinch reflex ion diodes on FLASH II accelerator at Northwest Institute of Nuclear Technology (NINT). (authors)

Self-organized critical behavior in pinned flux lattices

International Nuclear Information System (INIS)

Pla, O.; Nori, F.

1991-01-01

We study the response of pinned fluxed lattices, under small perturbations in the driving force, below and close to the pinning-depinning transition. For driving Lorentz forces below F c (the depinning force at which the whole flux lattice slides), the system has instabilities against small force increases, with a power-law distribution characteristic of self-organized criticality. Specifically, D(d)∼d -1,3 , where d is the displacement of a flux line after a very small force increase. We also study the initial stages of the motion of the lattice once the driving force overcomes the pinning forces

Fuel pin design algorithm for conceptual design studies

International Nuclear Information System (INIS)

Uselman, J.P.

1979-01-01

Two models are available which are currently verified by part of the requirements and which are adaptable as algorithms for the complete range. Fuel thermal performance is described by the HEDL SIEX model. Cladding damage and total deformation are determined by the GE GRO-II structural analysis code. A preliminary fuel pin performance model for analysis of (U, P/sub U/)O 2 pins in the COROPT core conceptual design system has been constructed by combining the key elements of SIEX and GRO-II. This memo describes the resulting pin performance model and its interfacing with COROPT system. Some exemplary results are presented

Analyzing the use of pins in safety bearings

DEFF Research Database (Denmark)

da Fonseca, Cesar A. L. L.; Weber, Hans I.; Fleischer, Philip F.

2015-01-01

A new concept for safety bearings is analyzed: useful in emergency situations, it shall protect the bearing from destruction by the use of pins which impact with a disc, both capable of good energy dissipation. Results of work in progress are presented by validating partial stages......–Kutta method is validated with experimental results. Simulations of rotor orbits due to the impact condition are analyzed and compared to data obtained from the experiment giving a good perspective on the use of pins. The contact interaction between rotor and pins uses an elastic-dissipative model. In addition...

Nominal power density analysis of thermoelectric pins with non-constant cross sections

International Nuclear Information System (INIS)

Shi, Yaoguang; Mei, Deqing; Yao, Zhehe; Wang, Yancheng; Liu, Haiyan; Chen, Zichen

2015-01-01

Highlights: • Nominal power density of TEGs with non-constant cross sections pins is analyzed. • An analytical model of nominal power density (NPD) is developed. • Influences of shape parameter on NPD for different geometric pins are investigated. • Effects of dimensionless efficiency and the temperature ratio on NPD are examined. - Abstract: The investigation of the geometric structure of TEG (thermoelectric generator) pins is essential, as their geometry determines the performance of devices. In this study, nominal power density (NPD) is used to find a better geometric structure of thermoelectric pins of TEGs, since a comparison of maximum dimensionless efficiencies for different geometric pins cannot be used to identify the optimum geometry. The influence of shape parameter on NPD for TEG pins in linear, quadratic and exponential cross-sectional functions is studied. The NPD decreases when the shape parameter increases for different geometric pins, while the maximum values of NPD are the same. Then, the effects of dimensionless efficiency and the temperature ratio on the NPD are analyzed. The NPD decreases with the increase in dimensionless efficiency and temperature ratio. Pins with linear variation in cross section have the highest NPD among the three geometries of pins evaluated

HLM fuel pin bundle experiments in the CIRCE pool facility

Energy Technology Data Exchange (ETDEWEB)

Martelli, Daniele, E-mail: daniele.martelli@ing.unipi.it [University of Pisa, Department of Civil and Industrial Engineering, Pisa (Italy); Forgione, Nicola [University of Pisa, Department of Civil and Industrial Engineering, Pisa (Italy); Di Piazza, Ivan; Tarantino, Mariano [Italian National Agency for New Technologies, Energy and Sustainable Economic Development, C.R. ENEA Brasimone (Italy)

2015-10-15

Highlights: • The experimental results represent the first set of values for LBE pool facility. • Heat transfer is investigated for a 37-pin electrical bundle cooled by LBE. • Experimental data are presented together with a detailed error analysis. • Nu is computed as a function of the Pe and compared with correlations. • Experimental Nu is about 25% lower than Nu derived from correlations. - Abstract: Since Lead-cooled Fast Reactors (LFR) have been conceptualized in the frame of GEN IV International Forum (GIF), great interest has focused on the development and testing of new technologies related to HLM nuclear reactors. In this frame the Integral Circulation Experiment (ICE) test section has been installed into the CIRCE pool facility and suitable experiments have been carried out aiming to fully investigate the heat transfer phenomena in grid spaced fuel pin bundles providing experimental data in support of European fast reactor development. In particular, the fuel pin bundle simulator (FPS) cooled by lead bismuth eutectic (LBE), has been conceived with a thermal power of about 1 MW and a uniform linear power up to 25 kW/m, relevant values for a LFR. It consists of 37 fuel pins (electrically simulated) placed on a hexagonal lattice with a pitch to diameter ratio of 1.8. The FPS was deeply instrumented by several thermocouples. In particular, two sections of the FPS were instrumented in order to evaluate the heat transfer coefficient along the bundle as well as the cladding temperature in different ranks of sub-channels. Nusselt number in the central sub-channel was therefore calculated as a function of the Peclet number and the obtained results were compared to Nusselt numbers obtained from convective heat transfer correlations available in literature on Heavy Liquid Metals (HLM). Results reported in the present work, represent the first set of experimental data concerning fuel pin bundle behaviour in a heavy liquid metal pool, both in forced and

Some aspects of continuum physics used in fuel pin modeling

International Nuclear Information System (INIS)

Bard, F.E.

1975-06-01

The mathematical formulation used in fuel pin modeling is described. Fuel pin modeling is not a simple extension of the experimental and interpretative methods used in classical mechanics. New concepts are needed to describe materials in a reactor environment. Some aspects of continuum physics used to develop these new constitutive equations for fuel pins are presented. (U.S.)

Excessive Cellular S-nitrosothiol Impairs Endocytosis of Auxin Efflux Transporter PIN2

Directory of Open Access Journals (Sweden)

Min Ni

2017-11-01

Full Text Available S-nitrosoglutathione reductase (GSNOR1 is the key enzyme that regulates cellular levels of S-nitrosylation across kingdoms. We have previously reported that loss of GSNOR1 resulted in impaired auxin signaling and compromised auxin transport in Arabidopsis, leading to the auxin-related morphological phenotypes. However, the molecular mechanism underpinning the compromised auxin transport in gsnor1-3 mutant is still unknown. Endocytosis of plasma-membrane (PM-localized efflux PIN proteins play critical roles in auxin transport. Therefore, we investigate whether loss of GSNOR1 function has any effects on the endocytosis of PIN-FORMED (PIN proteins. It was found that the endocytosis of either the endogenous PIN2 or the transgenically expressed PIN2-GFP was compromised in the root cells of gsnor1-3 seedlings relative to Col-0. The internalization of PM-associated PIN2 or PIN2-GFP into Brefeldin A (BFA bodies was significantly reduced in gsnor1-3 upon BFA treatment in a manner independent of de novo protein synthesis. In addition, the exogenously applied GSNO not only compromised the endocytosis of PIN2-GFP but also inhibited the root elongation in a concentration-dependent manner. Taken together, our results indicate that, besides the reduced PIN2 level, one or more compromised components in the endocytosis pathway could account for the reduced endocytosis of PIN2 in gsnor1-3.

The Pitt Innovation Challenge (PInCh): Driving Innovation in Translational Research Through an Incentive-Based, Problem-Focused Competition.

Science.gov (United States)

Fitzpatrick, Nicole Edgar; Maier, John; Yasko, Laurel; Mathias, David; Qua, Kacy; Wagner, Erika; Miller, Elizabeth; Reis, Steven E

2017-05-01

Translational research aims to move scientific discoveries across the biomedical spectrum from the laboratory to humans, and to ultimately transform clinical practice and public health policies. Despite efforts to accelerate translational research through national initiatives, several major hurdles remain. The authors created the Pitt Innovation Challenge (PInCh) as an incentive-based, problem-focused approach to solving identified clinical or public health problems at the University of Pittsburgh Clinical and Translational Science Institute in spring 2014. With input from a broad range of stakeholders, PInCh leadership arrived at the challenge question: How do we empower individuals to take control of their own health outcomes? The authors developed the PInCh's three-round proposal submission and review process as well as an online contest management tool to support the process. Ninety-two teams submitted video proposals in round one. Proposals included mobile applications (29; 32%), other information technology (19; 21%), and community program (22; 24%) solutions. Ten teams advanced to the final round, where three were awarded $100,000 to implement their solution over 12 months. In a 6-month follow-up survey, 6/11 (55%) team leaders stated the PInCh helped to facilitate connections outside their normal sphere of collaborators. Additional educational training sessions related to problem-focused research will be developed. The PInCh will be expanded to engage investment and industry communities to facilitate the translation of solutions to clinical practice via commercialization pathways. External organizations and other universities will be engaged to use the PInCh as a mechanism to fuel innovation in their spaces.

High average power diode pumped solid state lasers for CALIOPE

International Nuclear Information System (INIS)

Comaskey, B.; Halpin, J.; Moran, B.

1994-07-01

Diode pumping of solid state media offers the opportunity for very low maintenance, high efficiency, and compact laser systems. For remote sensing, such lasers may be used to pump tunable non-linear sources, or if tunable themselves, act directly or through harmonic crystals as the probe. The needs of long range remote sensing missions require laser performance in the several watts to kilowatts range. At these power performance levels, more advanced thermal management technologies are required for the diode pumps. The solid state laser design must now address a variety of issues arising from the thermal loads, including fracture limits, induced lensing and aberrations, induced birefringence, and laser cavity optical component performance degradation with average power loading. In order to highlight the design trade-offs involved in addressing the above issues, a variety of existing average power laser systems are briefly described. Included are two systems based on Spectra Diode Laboratory's water impingement cooled diode packages: a two times diffraction limited, 200 watt average power, 200 Hz multi-rod laser/amplifier by Fibertek, and TRW's 100 watt, 100 Hz, phase conjugated amplifier. The authors also present two laser systems built at Lawrence Livermore National Laboratory (LLNL) based on their more aggressive diode bar cooling package, which uses microchannel cooler technology capable of 100% duty factor operation. They then present the design of LLNL's first generation OPO pump laser for remote sensing. This system is specified to run at 100 Hz, 20 nsec pulses each with 300 mJ, less than two times diffraction limited, and with a stable single longitudinal mode. The performance of the first testbed version will be presented. The authors conclude with directions their group is pursuing to advance average power lasers. This includes average power electro-optics, low heat load lasing media, and heat capacity lasers

Positioning and locking device for fuel pin to grid attachment

International Nuclear Information System (INIS)

Frick, T.M.; Wineman, A.L.

1976-01-01

A positioning and locking device for fuel pin to grid attachment provides an inexpensive means of positively positioning and locking the individual fuel pins which make up the driver fuel assemblies used in nuclear reactors. The device can be adapted for use with a currently used attachment grid assembly design and insures that the pins remain in their proper position throughout the in-reactor life of the assembly. This device also simplifies fuel bundle assembly in that a complete row of fuel pins can be added to the bundle during each step of assembly. 8 claims, 8 drawing figures

Exchange anisotropy pinning of a standing spin-wave mode

Science.gov (United States)

Magaraggia, R.; Kennewell, K.; Kostylev, M.; Stamps, R. L.; Ali, M.; Greig, D.; Hickey, B. J.; Marrows, C. H.

2011-02-01

Standing spin waves in a thin film are used as sensitive probes of interface pinning induced by an antiferromagnet through exchange anisotropy. Using coplanar waveguide ferromagnetic resonance, pinning of the lowest energy spin-wave thickness mode in Ni80Fe20/Ir25Mn75 exchange-biased bilayers was studied for a range of Ir25Mn75 thicknesses. We show that pinning of the standing mode can be used to amplify, relative to the fundamental resonance, frequency shifts associated with exchange bias. The shifts provide a unique “fingerprint” of the exchange bias and can be interpreted in terms of an effective ferromagnetic film thickness and ferromagnet-antiferromagnet interface anisotropy. Thermal effects are studied for ultrathin antiferromagnetic Ir25Mn75 thicknesses, and the onset of bias is correlated with changes in the pinning fields. The pinning strength magnitude is found to grow with cooling of the sample, while the effective ferromagnetic film thickness simultaneously decreases. These results suggest that exchange bias involves some deformation of magnetic order in the interface region.

Coaxial foilless diode

Directory of Open Access Journals (Sweden)

Long Kong

2014-05-01

Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

Evaluation of light-emitting diode beacon light fixtures : final report.

Science.gov (United States)

2009-12-01

Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

IMp: The customizable LEGO® Pinned Insect Manipulator

Directory of Open Access Journals (Sweden)

Steen Dupont

2015-02-01

Full Text Available We present a pinned insect manipulator (IMp constructed of LEGO® building bricks with two axes of movement and two axes of rotation. In addition we present three variants of the IMp to emphasise the modular design, which facilitates resizing to meet the full range of pinned insect specimens, is fully customizable, collapsible, affordable and does not require specialist tools or knowledge to assemble.

IMp: The customizable LEGO® Pinned Insect Manipulator

Science.gov (United States)

Dupont, Steen; Price, Benjamin; Blagoderov, Vladimir

2015-01-01

Abstract We present a pinned insect manipulator (IMp) constructed of LEGO® building bricks with two axes of movement and two axes of rotation. In addition we present three variants of the IMp to emphasise the modular design, which facilitates resizing to meet the full range of pinned insect specimens, is fully customizable, collapsible, affordable and does not require specialist tools or knowledge to assemble. PMID:25685035

Testing of the KRI-developed Silicon PIN Radioxenon Detector

International Nuclear Information System (INIS)

Foxe, Michael P.; McIntyre, Justin I.

2015-01-01

removal of plastics within the cell, which will need to be explored in future work. A third important parameter in choosing the best detection technique for radioxenon is the resolution of the electron detection. While the resolution is important in determining the minimum detectable concentration, it plays a larger role in source identification when there is a visible signal. The Silicon PIN diodes generated improved resolution over a similar plastic scintillator cell. With the improved resolution, it becomes easier to distinguish the radioxenon isomers ( 133m Xe and 131m Xe) from the 133 Xe beta continuum background. With the beta background from 133 Xe ever present with the detection of the isomers, the improved resolution proves vital in calculating the ratios of the three isotopes. With an accurate measurement of the isotopic ratios, the anthropogenic sources of radioxenon (medical isotope production and nuclear reactors) can be more accurately distinguished. Based on the results shown within this report, a Si PIN beta cell shows the potential to aid in the operation and discriminating power of the IMS for the CTBTO. However, there are a number of issues that need attention before a detector of this design would be reliable enough for field operations in the IMS. Issues that need develop include, but are not limited to: studying the robustness of the design in field conditions, eliminating or minimizing the noise and variability of individual Si detector elements, understanding the long-term gain stability of the Si detectors, and reducing the non-Si materials within the cell (i.e. the plastic housing).

A comparative CFD investigation of helical wire-wrapped 7, 19 and 37 fuel pin bundles and its extendibility to 217 pin bundle

International Nuclear Information System (INIS)

Gajapathy, R.; Velusamy, K.; Selvaraj, P.; Chellapandi, P.; Chetal, S.C.

2009-01-01

Preliminary investigations of sodium flow and temperature distributions in heat generating fuel pin bundles with helical spacer wires have been carried out. Towards this, the 3D conservation equations of mass, momentum and energy have been solved using a commercial computational fluid dynamics (CFD) code. Turbulence has been accounted through the use of high Reynolds number version of standard k-ε model, with uniform mesh density respecting wall function requirements. The geometric details of the bundle and the heat flux in are similar to that of the Indian Prototype Fast Breeder Reactor (PFBR) that is currently under construction. The mixing characteristics of the flow among the peripheral and central zones are compared for 7, 19 and 37 fuel pin bundles and the characteristics are extended to a 217 pin bundle. The friction factors of the pin bundles obtained from the present study is seen to agree well with the values derived from experimental correlations. It is found that the normalized outlet velocities in the peripheral and central zones are nearly equal to 1.1-0.9, respectively which is in good agreement with the published hydraulic experimental measurements of 1.1-0.85 for a 91 pin bundle. The axial velocity is the maximum in the peripheral zone where spacer wires are located and minimum in the zones which are diametrically opposite to the respective zone of maximum velocity. The sodium temperature is higher in the zones where the flow area and mass flow rates are less due to the presence of the spacer wires though the axial velocity is higher there. It is the minimum in the peripheral zones where the circumferential flow is larger. Based on the flow and temperature distributions obtained for 19 and 37 pin bundles, a preliminary extrapolation procedure has been established for estimating the temperatures of peripheral and central zones of 217 pin bundle.

PInCom project: SaaS Big Data Platform for and Communication Channels

Directory of Open Access Journals (Sweden)

Juan Manuel Lombardo

2016-03-01

Full Text Available The problem of optimization will be addressed in this article, based on the premise that the successful implementation of Big Data solutions requires as a determining factor not only effective -it is assumed- but the efficiency of the responsiveness of management information get the best value offered by the digital and technological environment for gaining knowledge. In adopting Big Data strategies should be identified storage technologies and appropriate extraction to enable professionals and companies from different sectors to realize the full potential of the data. A success story is the solution PInCom: Intelligent-Communications Platform that aims customer loyalty by sending multimedia communications across heterogeneous transmission channels.

The PIN family of proteins in potato and their putative role in tuberisation

Directory of Open Access Journals (Sweden)

Efstathios eRoumeliotis

2013-12-01

Full Text Available The PIN family of trans-membrane proteins mediates auxin efflux throughout the plant and during various phases of plant development. In Arabidopsis thaliana, the PIN family comprised of 8 members, divided into ‘short’ and ‘long’ PINs according to the length of the hydrophilic domain of the protein. Based on sequence homology using the recently published potato genome sequence (Solanum tuberosum group Phureja we identified ten annotated potato StPIN genes. Mining the publicly available gene expression data, we constructed a catalogue tissue specificity of StPIN gene expression, focusing on the process of tuberization. A total of four StPIN genes exhibited increased expression four days after tuber induction, prior to the onset of stolon swelling. For two PIN genes, StPIN4 and StPIN2, promoter sequences were cloned and fused to the GUS reporter protein to study tissue specificity in more detail. StPIN4 promoter driven GUS staining was detected in the flower stigma, in the flower style, below the ovary and petals, in the root tips, in the vascular tissue of the stolons and in the tuber parenchyma cells. StPIN2 promoter driven GUS staining was detected in flower buds, in the vascular tissue of the swelling stolons and in the storage parenchyma of the growing tubers. Based on our results, we postulate a role for the StPINs in redistributing auxin in the swelling stolon during early events in tuber development.

Anisotropic flux pinning in high Tc superconductors

International Nuclear Information System (INIS)

Kolesnik, S.; Igalson, J.; Skoskiewicz, T.; Szymczak, R.; Baran, M.; Pytel, K.; Pytel, B.

1995-01-01

In this paper we present a comparison of the results of FC magnetization measurements on several Pb-Sr-(Y,Ca)-Cu-O crystals representing various levels of flux pinning. The pinning centers in our crystals have been set up during the crystal growth process or introduced by neutron irradiation. Some possible explanations of the observed effects, including surface barrier, flux-center distribution and sample-shape effects, are discussed. ((orig.))

Design and fabrication of two kind of SOI-based EA-type VOAs

Science.gov (United States)

Yuan, Pei; Wang, Yue; Wu, Yuanda; An, Junming; Hu, Xiongwei

2018-06-01

SOI-based variable optical attenuators based on electro-absorption mechanism are demonstrated in this paper. Two different doping structures are adopted to realize the attenuation: a structure with a single lateral p-i-n diode and a structure with several lateral p-i-n diodes connected in series. The VOAs with lateral p-i-n diodes connected in series (series VOA) can greatly improve the device attenuation efficiency compared to VOAs with a single lateral p-i-n diode structure (single VOA), which is verified by the experimental results that the attenuation efficiency of the series VOA and the single VOA is 3.76 dB/mA and 0.189 dB/mA respectively. The corresponding power consumption at 20 dB attenuation is 202 mW (series VOA) and 424 mW (single VOA) respectively. The raise time is 34.5 ns (single VOA) and 45.5 ns (series VOA), and the fall time is 37 ns (single VOA) and 48.5 ns (series VOA).

Solid state neutron dosimeter for space applications. Final Report

International Nuclear Information System (INIS)

Entine, G.; Nagargar, V.; Sharif, D.

1990-08-01

Personnel engaged in space flight are exposed to significant flux of high energy neutrons arising from both primary and secondary sources of ionizing radiation. Presently, there exist no compact neutron sensor capable of being integrated in a flight instrument to provide real time measurement of this radiation flux. A proposal was made to construct such an instrument using special PIN silicon diode which has the property of being insensitive to the other forms of ionizing radiation. Studies were performed to determine the design and construction of a better reading system to allow the PIN diode to be read with high precision. The physics of the device was studied, especially with respect to those factors which affect the sensitivity and reproducibility of the neutron response. This information was then used to develop methods to achieve high sensitivity at low neutron doses. The feasibility was shown of enhancing the PIN diode sensitivity to make possible the measurement of the low doses of neutrons encountered in space flights. The new PIN diode will make possible the development of a very compact, accurate, personal neutron dosimeter

Automation of FBTR fuel pin inspection using FPGA

International Nuclear Information System (INIS)

Khare, K.M.; Pai, Siddhesh; Pant, Brijesh; Sendhil Raja, S.; Gupta, P.K.

2011-01-01

A non-contact metrology system for inspection of FBTR fuel pins has been developed. The system consists of a stepper motors driven mechanism for orientation and positioning of FBTR fuel pin, a telecentric imaging system, absolute linear encoder with 0.1 μm resolution and a Field Programmable Gate Array (FPCA) based controller. The FBTR pin assembly is telecentrically illuminated from bottom by a red LED and its shadow graph is imaged using a CCD camera through telecentric imaging lens system. For system control and automation we have used a FPGA that has integrated soft picoblaze processor, X-θ axis motion controller, custom IPs for encoder data acquisition, synchronization circuit, RS485 interface along with other l/Os. Using the Graphical User Interface (GUI) on a PC the system is initialized at home position and the controller provides the trigger signal for start of data acquisition of CCD camera. CCD image of pin and the corresponding X-θ information is captured. After the acquisition of one set of images, the imaging module is moved with a step size pre-programmed to ensure proper stitching of acquired images. The GUI is programmed to analyze these X-θ Images to calculate the required parameters of the fuel pin like the diameter variation, pitch and bow. The details of the instrument and measurements made with it will be presented. (author)

Diode-laser-illuminated automotive lamp systems

Science.gov (United States)

Marinelli, Michael A.; Remillard, Jeffrey T.

1998-05-01

We have utilized the high brightness of state-of-the-art diode laser sources, and a variety of emerging optical technologies to develop a new class of thin, uniquely styled automotive brake and signal lamps. Using optics based on thin (5 mm) plastic sheets, these lamps provide appearance and functional advantages not attainable with traditional automotive lighting systems. The light is coupled into the sheets using a 1 mm diameter glass fiber, and manipulated using refraction and reflection from edges, surfaces, and shaped cut-outs. Light can be extracted with an efficiency of approximately 50% and formed into a luminance distribution that meets the Society of Automotive Engineers (SAE) photometric requirements. Prototype lamps using these optics have been constructed and are less than one inch in thickness. Thin lamps reduce sheet metal costs, complexity, material usage, weight, and allow for increased trunk volume. In addition, these optics enhance lamp design flexibility. When the lamps are not energized, they can appear body colored, and when lighted, the brightness distribution across the lamp can be uniform or structured. A diode laser based brake lamp consumes seven times less electrical power than one using an incandescent source and has instant on capability. Also, diode lasers have the potential to be 10-year/150,000 mile light sources.

Effect of oil around the pin boss bearing on bearing friction force; Piston pin jikuukebu kinbo no junkatsuyu ga masatsuryoku ni oyobosu eikyo

Energy Technology Data Exchange (ETDEWEB)

Takiguchi, M; Suhara, T; Ato, S; Someya, T [Musashi Institute of Technology, Tokyo (Japan)

1997-10-01

Piston pin bearings are engine parts placed under severe lubricating condition because of the high unit load and temperature and the low sliding speeds. Therefore, they are vulnerable to many lubrication problems such as abnormal wear, scuffs and seizures. In our recent study, the bearing friction were measured using a original measuring device and it was found out that the lubricating conditions of piston pin boss bearings are non-fluid lubrication due to the oil starvation. In this study, we have also measured the lubricating oil behavior around the pin boss bearing using a special cylinder with glass window, and analyzed the relationship between the friction force and the oil behavior at the pin boss bearings in a actual operating gasoline engine. 2 refs., 9 figs., 1 tab.

Pinning Down versus Density

OpenAIRE

Juhász, István; Soukup, Lajos; Szentmiklóssy, Zoltán

2015-01-01

The pinning down number $ {pd}(X)$ of a topological space $X$ is the smallest cardinal $\\kappa$ such that for any neighborhood assignment $U:X\\to \\tau_X$ there is a set $A\\in [X]^\\kappa$ with $A\\cap U(x)\

Development of modeling tools for pin-by-pin precise reactor simulation

International Nuclear Information System (INIS)

Ma Yan; Li Shu; Li Gang; Zhang Baoyin; Deng Li; Fu Yuanguang

2013-01-01

In order to develop large-scale transport simulation and calculation method (such as simulation of whole reactor core pin-by-pin problem), the Institute of Applied Physics and Computational Mathematics developed the neutron-photon coupled transport code JMCT and the toolkit JCOGIN. Creating physical calculation model easily and efficiently can essentially reduce problem solving time. Currently, lots of visual modeling programs have been developed based on different CAD systems. In this article, the developing idea of a visual modeling tool based on field oriented development was introduced. Considering the feature of physical modeling, fast and convenient operation modules were developed. In order to solve the storage and conversion problems of large scale models, the data structure and conversional algorithm based on the hierarchical geometry tree were designed. The automatic conversion and generation of physical model input file for JMCT were realized. By using this modeling tool, the Dayawan reactor whole core physical model was created, and the transformed file was delivered to JMCT for transport calculation. The results validate the correctness of the visual modeling tool. (authors)

Exponential synchronization of complex delayed dynamical networks via pinning periodically intermittent control

Energy Technology Data Exchange (ETDEWEB)

Cai Shuiming, E-mail: caishuiming2008@yahoo.com.c [Department of Mathematics, Shanghai University, Shanghai 200444 (China); Institute of System Biology, Shanghai University, Shanghai 200444 (China); Hao Junjun [Institute of System Biology, Shanghai University, Shanghai 200444 (China); He, Qinbin [Department of Mathematics, Taizhou University, Linhai 317000 (China); Institute of System Biology, Shanghai University, Shanghai 200444 (China); Liu Zengrong, E-mail: zrongliu@126.co [Department of Mathematics, Shanghai University, Shanghai 200444 (China) and Institute of System Biology, Shanghai University, Shanghai 200444 (China)

2011-05-09

The problem of synchronization for a class of complex delayed dynamical networks via pinning periodically intermittent control is considered in this Letter. Some novel and useful exponential synchronization criteria are obtained by utilizing the methods which are different from the techniques employed in the existing works, and the derived results are less conservative. Especially, the traditional assumptions on control width and time delays are released in our results. Moreover, a pinning scheme deciding what nodes should be chosen as pinned candidates and how many nodes are needed to be pinned for a fixed coupling strength is provided. A Barabasi-Albert network example is finally given to illustrate the effectiveness of the theoretical results. - Highlights: Pinning control problem of complex networks via intermittent control is investigated. The traditional assumptions on control width and time delays are removed. A scheme deciding what nodes should be chosen as pinned candidates is proposed. A scheme deciding how many nodes are needed to be pinned is provided.

Percutaneous external fixator pins with bactericidal micron-thin sol-gel films for the prevention of pin tract infection.

Science.gov (United States)

Qu, Haibo; Knabe, Christine; Radin, Shula; Garino, Jonathan; Ducheyne, Paul

2015-09-01

Risk of infection is considerable in open fractures, especially when fracture fixation devices are used to stabilize the fractured bones. Overall deep infection rates of 16.2% have been reported. The infection rate is even greater, up to 32.2%, with external fixation of femoral fractures. The use of percutaneous implants for certain clinical applications, such as percutaneous implants for external fracture fixation, still represents a challenge today. Currently, bone infections are very difficult to treat. Very potent antibiotics are needed, which creates the risk of irreversible damage to other organs, when the antibiotics are administered systemically. As such, controlled, local release is being pursued, but no such treatments are in clinical use. Herein, the use of bactericidal micron-thin sol-gel films on metallic fracture fixation pins is reported. The data demonstrates that triclosan (2,4,4'-trichloro-2'-hydroxydiphenylether), an antimicrobial agent, can be successfully incorporated into micron-thin sol-gel films deposited on percutaneous pins. The sol-gel films continuously release triclosan in vitro for durations exceeding 8 weeks (longest measured time point). The bactericidal effect of the micron-thin sol-gel films follows from both in vitro and in vivo studies. Inserting percutaneous pins in distal rabbit tibiae, there were no signs of infection around implants coated with a micron-thin sol-gel/triclosan film. Healing had progressed normally, bone tissue growth was normal and there was no epithelial downgrowth. This result was in contrast with the results in rabbits that received control, uncoated percutaneous pins, in which abundant signs of infection and epithelial downgrowth were observed. Thus, well-adherent, micron-thin sol-gel films laden with a bactericidal molecule successfully prevented pin tract infection. Copyright © 2015 Elsevier Ltd. All rights reserved.

Evaluating Approaches to Rendering Braille Text on a High-Density Pin Display.

Science.gov (United States)

Morash, Valerie S; Russomanno, Alexander; Gillespie, R Brent; OModhrain, Sile

2017-10-13

Refreshable displays for tactile graphics are typically composed of pins that have smaller diameters and spacing than standard braille dots. We investigated configurations of high-density pins to form braille text on such displays using non-refreshable stimuli produced with a 3D printer. Normal dot braille (diameter 1.5 mm) was compared to high-density dot braille (diameter 0.75 mm) wherein each normal dot was rendered by high-density simulated pins alone or in a cluster of pins configured in a diamond, X, or square; and to "blobs" that could result from covering normal braille and high-density multi-pin configurations with a thin membrane. Twelve blind participants read MNREAD sentences displayed in these conditions. For high-density simulated pins, single pins were as quickly and easily read as normal braille, but diamond, X, and square multi-pin configurations were slower and/or harder to read than normal braille. We therefore conclude that as long as center-to-center dot spacing and dot placement is maintained, the dot diameter may be open to variability for rendering braille on a high density tactile display.

Failure analysis on false call probe pins of microprocessor test equipment

Science.gov (United States)

Tang, L. W.; Ong, N. R.; Mohamad, I. S. B.; Alcain, J. B.; Retnasamy, V.

2017-09-01

A study has been conducted to investigate failure analysis on probe pins of test modules for microprocessor. The `health condition' of the probe pin is determined by the resistance value. A test module of 5V power supplied from Arduino UNO with "Four-wire Ohm measurement" method is implemented in this study to measure the resistance of the probe pins of a microprocessor. The probe pins from a scrapped computer motherboard is used as the test sample in this study. The functionality of the test module was validated with the pre-measurement experiment via VEE Pro software. Lastly, the experimental work have demonstrated that the implemented test module have the capability to identify the probe pin's `health condition' based on the measured resistance value.

Enquiry into the Topology of Plasma Membrane-Localized PIN Auxin Transport Components.

Science.gov (United States)

Nodzyński, Tomasz; Vanneste, Steffen; Zwiewka, Marta; Pernisová, Markéta; Hejátko, Jan; Friml, Jiří

2016-11-07

Auxin directs plant ontogenesis via differential accumulation within tissues depending largely on the activity of PIN proteins that mediate auxin efflux from cells and its directional cell-to-cell transport. Regardless of the developmental importance of PINs, the structure of these transporters is poorly characterized. Here, we present experimental data concerning protein topology of plasma membrane-localized PINs. Utilizing approaches based on pH-dependent quenching of fluorescent reporters combined with immunolocalization techniques, we mapped the membrane topology of PINs and further cross-validated our results using available topology modeling software. We delineated the topology of PIN1 with two transmembrane (TM) bundles of five α-helices linked by a large intracellular loop and a C-terminus positioned outside the cytoplasm. Using constraints derived from our experimental data, we also provide an updated position of helical regions generating a verisimilitude model of PIN1. Since the canonical long PINs show a high degree of conservation in TM domains and auxin transport capacity has been demonstrated for Arabidopsis representatives of this group, this empirically enhanced topological model of PIN1 will be an important starting point for further studies on PIN structure-function relationships. In addition, we have established protocols that can be used to probe the topology of other plasma membrane proteins in plants. Copyright © 2016 The Authors. Published by Elsevier Inc. All rights reserved.

Performance of electrical contact pins near a nuclear explosion

International Nuclear Information System (INIS)

Ragan, C.E.; Silbert, M.G.; Ellis, A.N.; Robinson, E.E.; Daddario, M.J.

1977-09-01

The pressures attainable in equation-of-state studies using nuclear-explosion-driven shock waves greatly exceed those that can be reached in normal laboratory conditions. However, the diagnostic instrumentation must survive in the high-radiation environment present near such an explosion. Therefore, a set of experiments were fielded on the Redmud event to test the feasibility of using electrical contact pins in this environment. In these experiments a 60-cm-high shield of boron-lead was placed on the rack lid approximately 1 m from the device. A sample consisting of slabs of molybdenum and 238 U was placed on top of the shield, and twelve electrical contact pins were embedded to five different depths in the materials. Five different multiplexing-charging circuits were used for the pins, and a piezoelectric quartz gauge was placed on top of the uranium to obtain an estimate of the fission-energy deposition. All of the charged pins survived the radiation and produced signals indicating shock arrival. The uncertainty in determining the pin-closure time was approximately 3 ns. The signal from the quartz gauge corresponded to a pressure that was consistent with the calculated neutron fluence

Pin failure modeling of the A series CABRI tests

International Nuclear Information System (INIS)

Young, M.F.; Portugal, J.L.

1978-01-01

The EXPAND pin fialure model, a research tool designed to model pin failure under prompt burst conditions, has been used to predict failure conditions for several of the A series CABRI tests as part of the United States participation in the CABRI Joint Project. The Project is an international program involving France, Germany, England, Japan, and the United States and has the goal of obtaining experimental data relating to the safety of LMFBR's. The A series, designed to simulate high ramp rate TOP conditions, initially utilizes single, fresh UO 2 pins of the PHENIX type in a flowing sodium loop. The pins are preheated at constant power in the CABRI reactor to establish steady state conditions (480 w/cm at the axial peak) and then subjected to a power pulse of 14 ms to 24 ms duration

Development of spectral history methods for pin-by-pin core analysis method using three-dimensional direct response matrix

International Nuclear Information System (INIS)

Mitsuyasu, T.; Ishii, K.; Hino, T.; Aoyama, M.

2009-01-01

Spectral history methods for pin-by-pin core analysis method using the three-dimensional direct response matrix have been developed. The direct response matrix is formalized by four sub-response matrices in order to respond to a core eigenvalue k and thus can be recomposed at each outer iteration in the core analysis. For core analysis, it is necessary to take into account the burn-up effect related to spectral history. One of the methods is to evaluate the nodal burn-up spectrum obtained using the out-going neutron current. The other is to correct the fuel rod neutron production rates obtained the pin-by-pin correction. These spectral history methods were tested in a heterogeneous system. The test results show that the neutron multiplication factor error can be reduced by half during burn-up, the nodal neutron production rates errors can be reduced by 30% or more. The root-mean-square differences between the relative fuel rod neutron production rate distributions can be reduced within 1.1% error. This means that these methods can accurately reflect the effects of intra- and inter-assembly heterogeneities during burn-up and can be used for core analysis. Core analysis with the DRM method was carried out for an ABWR quarter core and it was found that both thermal power and coolant-flow distributions were smoothly converged. (authors)

Temperature dependent pinning landscapes in REBCO thin films

Science.gov (United States)

Jaroszynski, Jan; Constantinescu, Anca-Monia; Hu, Xinbo Paul

2015-03-01

The pinning landscapes of REBCO (RE=rare earth elements) thin films have been a topic of study in recent years due to, among other reasons, their high ability to introduce various phases and defects. Pinning mechanisms studies in high temperature superconductors often require detailed knowledge of critical current density as a function of magnetic field orientation as well as field strength and temperature. Since the films can achieve remarkably high critical current, challenges exist in evaluating these low temperature (down to 4.2 K) properties in high magnetic fields up to 30 T. Therefore both conventional transport, and magnetization measurements in a vibrating coil magnetometer equipped with rotating sample platform were used to complement the study. Our results clearly show an evolution of pinning from strongly correlated effects seen at high temperatures to significant contributions from dense but weak pins that thermal fluctuations render ineffective at high temperatures but which become strong at lower temperatures Support for this work is provided by the NHMFL via NSF DRM 1157490

PinAPL-Py: A comprehensive web-application for the analysis of CRISPR/Cas9 screens.

Science.gov (United States)

Spahn, Philipp N; Bath, Tyler; Weiss, Ryan J; Kim, Jihoon; Esko, Jeffrey D; Lewis, Nathan E; Harismendy, Olivier

2017-11-20

Large-scale genetic screens using CRISPR/Cas9 technology have emerged as a major tool for functional genomics. With its increased popularity, experimental biologists frequently acquire large sequencing datasets for which they often do not have an easy analysis option. While a few bioinformatic tools have been developed for this purpose, their utility is still hindered either due to limited functionality or the requirement of bioinformatic expertise. To make sequencing data analysis of CRISPR/Cas9 screens more accessible to a wide range of scientists, we developed a Platform-independent Analysis of Pooled Screens using Python (PinAPL-Py), which is operated as an intuitive web-service. PinAPL-Py implements state-of-the-art tools and statistical models, assembled in a comprehensive workflow covering sequence quality control, automated sgRNA sequence extraction, alignment, sgRNA enrichment/depletion analysis and gene ranking. The workflow is set up to use a variety of popular sgRNA libraries as well as custom libraries that can be easily uploaded. Various analysis options are offered, suitable to analyze a large variety of CRISPR/Cas9 screening experiments. Analysis output includes ranked lists of sgRNAs and genes, and publication-ready plots. PinAPL-Py helps to advance genome-wide screening efforts by combining comprehensive functionality with user-friendly implementation. PinAPL-Py is freely accessible at http://pinapl-py.ucsd.edu with instructions and test datasets.

The Pierce-diode approximation to the single-emitter plasma diode

International Nuclear Information System (INIS)

Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

2006-01-01

The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the (ε,η) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions

Frequency locking of compact laser-diode modules at 633 nm

Science.gov (United States)

Nölleke, Christian; Leisching, Patrick; Blume, Gunnar; Jedrzejczyk, Daniel; Pohl, Johannes; Feise, David; Sahm, Alexander; Paschke, Katrin

2018-02-01

This work reports on a compact diode-laser module emitting at 633 nm. The emission frequency can be tuned with temperature and current, while optical feedback of an internal DBR grating ensures single-mode operation. The laser diode is integrated into a micro-fabricated package, which includes optics for beam shaping, a miniaturized optical isolator, and a vapor cell as frequency reference. The achieved absolute frequency stability is below 10-8 , while the output power can be more than 10 mW. This compact absolute frequency-stabilized laser system can replace gas lasers and may be integrated in future quantum technology devices.

Vortex dynamics in type-II superconductors under strong pinning conditions

Science.gov (United States)

Thomann, A. U.; Geshkenbein, V. B.; Blatter, G.

2017-10-01

We study effects of pinning on the dynamics of a vortex lattice in a type-II superconductor in the strong-pinning situation and determine the force-velocity (or current-voltage) characteristic combining analytical and numerical methods. Our analysis deals with a small density np of defects that act with a large force fp on the vortices, thereby inducing bistable configurations that are a characteristic feature of strong pinning theory. We determine the velocity-dependent average pinning-force density 〈Fp(v ) 〉 and find that it changes on the velocity scale vp˜fp/η a03 , where η is the viscosity of vortex motion and a0 the distance between vortices. In the small pin-density limit, this velocity is much larger than the typical flow velocity vc˜Fc/η of the free vortex system at drives near the critical force density Fc=〈Fp(v =0 ) 〉 ∝npfp . As a result, we find a generic excess-force characteristic, a nearly linear force-velocity characteristic shifted by the critical force density Fc; the linear flux-flow regime is approached only at large drives. Our analysis provides a derivation of Coulomb's law of dry friction for the case of strong vortex pinning.

Parasitic nematodes modulate PIN-mediated auxin transport to facilitate infection.

Directory of Open Access Journals (Sweden)

Wim Grunewald

2009-01-01

Full Text Available Plant-parasitic nematodes are destructive plant pathogens that cause significant yield losses. They induce highly specialized feeding sites (NFS in infected plant roots from which they withdraw nutrients. In order to establish these NFS, it is thought that the nematodes manipulate the molecular and physiological pathways of their hosts. Evidence is accumulating that the plant signalling molecule auxin is involved in the initiation and development of the feeding sites of sedentary plant-parasitic nematodes. Intercellular transport of auxin is essential for various aspects of plant growth and development. Here, we analysed the spatial and temporal expression of PIN auxin transporters during the early events of NFS establishment using promoter-GUS/GFP fusion lines. Additionally, single and double pin mutants were used in infection studies to analyse the role of the different PIN proteins during cyst nematode infection. Based on our results, we postulate a model in which PIN1-mediated auxin transport is needed to deliver auxin to the initial syncytial cell, whereas PIN3 and PIN4 distribute the accumulated auxin laterally and are involved in the radial expansion of the NFS. Our data demonstrate that cyst nematodes are able to hijack the auxin distribution network in order to facilitate the infection process.

Parasitic nematodes modulate PIN-mediated auxin transport to facilitate infection.

Science.gov (United States)

Grunewald, Wim; Cannoot, Bernard; Friml, Jirí; Gheysen, Godelieve

2009-01-01

Plant-parasitic nematodes are destructive plant pathogens that cause significant yield losses. They induce highly specialized feeding sites (NFS) in infected plant roots from which they withdraw nutrients. In order to establish these NFS, it is thought that the nematodes manipulate the molecular and physiological pathways of their hosts. Evidence is accumulating that the plant signalling molecule auxin is involved in the initiation and development of the feeding sites of sedentary plant-parasitic nematodes. Intercellular transport of auxin is essential for various aspects of plant growth and development. Here, we analysed the spatial and temporal expression of PIN auxin transporters during the early events of NFS establishment using promoter-GUS/GFP fusion lines. Additionally, single and double pin mutants were used in infection studies to analyse the role of the different PIN proteins during cyst nematode infection. Based on our results, we postulate a model in which PIN1-mediated auxin transport is needed to deliver auxin to the initial syncytial cell, whereas PIN3 and PIN4 distribute the accumulated auxin laterally and are involved in the radial expansion of the NFS. Our data demonstrate that cyst nematodes are able to hijack the auxin distribution network in order to facilitate the infection process.

Fuel canister and blockage pin fabrication for SLSF Experiment P4

International Nuclear Information System (INIS)

Rhude, H.V.; Folkrod, J.R.; Noland, R.A.; Schaus, P.S.; Benecke, M.W.; Delucchi, T.A.

1983-01-01

As part of its fast breeder reactor safety research program, Argonne National Laboratory (ANL) has conducted an experiment (SLSF Experiment P4) to determine the extent of fuel-failure propagation resulting from the release of molten fuel from one or more heat-generating fuel canisters. The test conditions consisted of 37 full-length FTR fuel pins operating at FTR rated core nominal peak fuel/reduced coolant conditions. Thirty-four of the the fuel pins were prototypical FTR mixed-oxide fuel pins. The other three fuel pins were fabricated with a mid-core section having an enlarged canister containing fully enriched UO 2 . Two of the canisters were cylindrical and one was fluted. The cylindrical canisters were designed to fail and release molten fuel into the 37-pin fuel cluster at near full power

Thermal and stress analyses in thermoelectric generator with tapered and rectangular pin configurations

International Nuclear Information System (INIS)

Yilbas, Bekir Sami; Akhtar, S.S.; Sahin, A.Z.

2016-01-01

Thermal stress developed in thermoelectric generators is critical for long service applications. High temperature gradients, due to a large temperature difference across the junctions, causes excessive stress levels developed in the device pins and electrodes at the interfaces. In the present study, a thermoelectric generator with horizontal pin configuration is considered and thermal stress analysis in the device is presented. Ceramic wafer is considered to resemble the high temperature plate and copper electrodes are introduced at the pin junctions to reduce the electrical resistance between the pins and the high and low temperature junction plates during the operation. Finite element code is used to simulate temperature and stress fields in the thermoelectric generator. In the simulations, convection and radiation losses from the thermoelectric pins are considered and bismuth telluride pin material with and without tapering is incorporated. It is found that von Mises stress attains high values at the interface between the hot and cold junctions and the copper electrodes. Thermal stress developed in tapered pin configuration attains lower values than that of rectangular pin cross-section. - Highlights: • Different cold junction temperatures improves thermoelectric generator performance. • von Mises stress remains high across copper electrodes and hot junction ceramics. • von Mises stress reduces along pin length towards cold junction. • Pin tapering lowers stress levels in thermoelectric generator.

Fuel pin response to an overpower transient in an LMFBR

International Nuclear Information System (INIS)

Grosberg, A.J.; Head, J.L.

1979-01-01

This paper describes a method by which the ability of a whole-core code accurately to predict the time and location of the first fuel pin failures may be tested. The method involves the use of a relatively simple whole-core code to 'drive' a sophisticated fuel pin code, which is far too complex to be used within a whole-core code but which is potentially capable of modelling reliably the response of an individual fuel pin. The method cannot follow accurately the subsequent course of the transient because the simple whole-core code does not model the reactivity effects of events which may follow pin failure. The codes used were the simple whole-core code FUTURE and the fuel pin behaviour code FRUMP. The paper describes an application of the method to analyse a hypothetical LMFBR accident in which the control rods were assumed to be driven from the core at maximum speed, with all trip circuits failed. Taking 0.5% clad strain as a clad failure criterion, failure was predicted to occur at the top of the active core at about 10s into the transient. A repeat analysis, using an alternative clad yield criterion which is thought to be more realistic, indicated failure at the same position but 24s into the transient. This is after the onset of sodium boiling. Pin failure at the top of the core are likely to cause negative reactivity changes. In this hypothetical accident, pin failures are likely, therefore, to have a moderating effect on the course of the transient. (orig.)

Dynamic Phases in Driven Vortex Lattices in Superconductors with Periodic Pinning Arrays.

Science.gov (United States)

Reichhardt, C.; Olson, C. J.; Nori, F.

1997-03-01

In an extensive series of simulations of driven vortices interacting with periodic pinning arrays, an extremely rich variety of novel plastic flow phases, very distinct from those observed in random arrays, are found as a function of applied driving force. We show that signatures of the transitions between these different dynamical phases appear as pronounced jumps and dips in the I-V curves, coinciding with marked changes in the microscopic structure and flow behavior of the vortex lattice. When the number of vortices is greater than the number of pinning sites, we observe up to six distinct dynamical phases, including a pinned phase, a flow of interstitial vortices between pinned vortices, a disordered flow, a 1D flow along the pinning rows, and a homogeneous flow. By varying a wide range of microscopic pinning parameters, including pinning strength, size, density, and degree of ordering, as well as varying temperature and commensurability, we obtain a series of dynamic phase diagrams. nori>A short video will also be presented to highlight these different dynamic phases.

Electrical transport and pinning properties of Nb films with washboard-like nanostructures

Energy Technology Data Exchange (ETDEWEB)

Dobrovolskiy, Oleksandr V. [Physikalisches Institut Goethe-University, Frankfurt am Main (Germany); Department of Physics, Kharkiv National University (Ukraine); Begun, Evgeniya; Huth, Michael [Physikalisches Institut Goethe-University, Frankfurt am Main (Germany); Shklovskij, Valerij A. [Department of Physics, Kharkiv National University (Ukraine); Institute for Theoretical Physics NSC-KIPT, Kharkiv (Ukraine)

2013-07-01

A careful analysis of the magneto-transport properties of epitaxial nanostructured Nb thin films in the normal and the mixed state is performed. The nanopatterns were prepared by focused ion beam (FIB) milling. They provide a washboard-like pinning potential landscape for vortices in the mixed state and simultaneously cause a resistivity anisotropy in the normal state. Two matching magnetic fields for the vortex lattice with the underlying nanostructures have been observed. By applying these fields, the most likely pinning sites along which the flux lines move through the samples have been selected. By this, either the background isotropic pinning of the pristine film or the enhanced isotropic pinning originating from the nanoprocessing have been probed. Via an Arrhenius analysis of the resistivity data the pinning activation energies for three vortex lattice parameters have been quantified. The changes in the electrical transport and the pinning properties have been correlated with the results of the microstructural and topographical characterization of the FIB-patterned samples. The obtained results provide further insight into the pinning mechanisms at work in FIB-nanopatterned superconductors for fluxonic applications.

Generation of spiral waves pinned to obstacles in a simulated excitable system

Science.gov (United States)

Phantu, Metinee; Kumchaiseemak, Nakorn; Porjai, Porramain; Sutthiopad, Malee; Müller, Stefan C.; Luengviriya, Chaiya; Luengviriya, Jiraporn

2017-09-01

Pinning phenomena emerge in many dynamical systems. They are found to stabilize extreme conditions such as superconductivity and super fluidity. The dynamics of pinned spiral waves, whose tips trace the boundary of obstacles, also play an important role in the human health. In heart, such pinned waves cause longer tachycardia. In this article, we present two methods for generating pinned spiral waves in a simulated excitable system. In method A, an obstacle is set in the system prior to an ignition of a spiral wave. This method may be suitable only for the case of large obstacles since it often fails when used for small obstacles. In method B, a spiral wave is generated before an obstacle is placed at the spiral tip. With this method, a pinned spiral wave is always obtained, regardless the obstacle size. We demonstrate that after a transient interval the dynamics of the pinned spiral waves generated by the methods A and B are identical. The initiation of pinned spiral waves in both two- and three-dimensional systems is illustrated.

Wear studies on prosthetic materials using the pin-on-disc machine.

Science.gov (United States)

Wright, K W; Dobbs, H S; Scales, J T

1982-01-01

The wear of ultra high molecular weight polyethylene in combination with cobalt-chromium-molybdenum alloy was investigated by pin-on-disc experiments in which the alloy pin was loaded against the rotating polyethylene disc. In some experiments the pin was stationary, but in others it rotated about its axis. The effect of lubricant type, pin rotation, magnitude of the applied load, magnitude of the relative surface velocity, and disc storage in various environments was investigated. Wear of the polyethylene was assessed at 100 h intervals by both volumetric and gravimetric methods. Each experiment lasted 1000 h. It was concluded that of the lubricants tested bovine serum was the most suitable and that pin rotation produced more suitable polyethylene surfaces than did the stationary pin. The wear rate increased slightly with load (possibly owing to creep), was insensitive to speed, and was not affected by disc storage. The dynamic coefficient of friction increased with running tme. Results obtained by the two wear assessment methods were comparable and the reproducibility of the results was good.

75 MeV boron ion irradiation studies on Si PIN photodiodes

Energy Technology Data Exchange (ETDEWEB)

Prabhakara Rao, Y.P.; Praveen, K.C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Rejeena Rani, Y. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore 560013, Karnataka (India); Tripathi, Ambuj [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gnana Prakash, A.P., E-mail: gnanap@hotmail.com [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

2013-12-01

The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The Si PIN photodiodes are coated with 150 nm silicon dioxide (SiO{sub 2}) as anti-reflective (AR) coating. The presence of AR coating on the performance of irradiated PIN photodiodes is studied up to a total dose of 10 Mrad. The effects of 75 MeV boron (B{sup 5+}) ions and {sup 60}Co gamma radiation on the I–V, C–V and spectral responses of PIN photodiodes were studied systematically to understand the radiation tolerance of the devices. The 75 MeV B{sup 5+} irradiation results are compared with {sup 60}Co gamma irradiated results in the same dose range for 1 mm × 1 mm and 10 mm × 10 mm active area PIN photodiodes. The irradiation results show that the ion irradiated PIN photodiodes show more degradation when compared {sup 60}Co gamma irradiated devices. The irradiation results are presented in this paper and the possible mechanism behind the degradation of photodiodes is also discussed in the paper.

Development of vibropac MOX fuel pins serviceable up TP superhigh burnups

International Nuclear Information System (INIS)

Mayorshin, A.A.; Gadzhiev, G.I.; Kisly, V.A.; Skiba, O.V.; Tzykanov, V.A.

1998-01-01

The main results on investigations of fast reactor fuel pins with (UPu)O 2 vibropac fuel to substantiate their serviceability up to the super-high burnups are presented. The BOR-60 reactor fuel pins radiation behaviour in stationary, transient and designed emergency conditions has been determined from the fuel pins dimensional stability analysis having regard to the results of investigation fuel and cladding swelling as well as estimations of fuel and cladding thermal-mechanical and physico-chemical interactions. It is shown that the change of the outer diameter is minimum in fuel pins with VMOX fuel with a getter-metallic uranium powder and ferrito-martensite steel cladding, and the corrosion damage of the cladding inner surface is absent up to 26% h.a. The experiments with over-heating of the irradiated fuel pins cladding up to 850 deg. C did not lead to any changes in pins integrity. The availability of the periphery area of the vibropac fuel cure initial structure provides the minimum level of the thermal-mechanical stress at transient conditions of reactor operation. (author)

SP-100 Fuel Pin Performance: Results from Irradiation Testing

Science.gov (United States)

Makenas, Bruce J.; Paxton, Dean M.; Vaidyanathan, Swaminathan; Marietta, Martin; Hoth, Carl W.

1994-07-01

A total of 86 experimental fuel pins with various fuel, liner, and cladding candidate materials have been irradiated in the Experimental Breeder Reactor-II (EBR-II) and the Fast Flux Test Facility (FFTF) reactor as part of the SP-100 fuel pin irradiation testing program. Postirradiation examination results from these fuel pins are key in establishing performance correlations and demonstrating the lifetime and safety of the reactor fuel system. This paper provides a brief description of the in-reactor fuel pin tests and presents the most recent irradiation data on the performance of wrought rhenium (Re) liner material and high density UN fuel at goal burnup of 6 atom percent (at. %). It also provides an overview of the significant variety of other fuel/liner/cladding combinations which were irradiated as part of this program and which may be of interest to more advanced efforts.

PINS Testing and Modification for Explosive Identification

International Nuclear Information System (INIS)

Seabury, E.H.; Caffrey, A.J.

2011-01-01

The INL's Portable Isotopic Neutron Spectroscopy System (PINS)1 non-intrusively identifies the chemical fill of munitions and sealed containers. PINS is used routinely by the U.S. Army, the Defense Threat Reduction Agency, and foreign military units to determine the contents of munitions and other containers suspected to contain explosives, smoke-generating chemicals, and chemical warfare agents such as mustard and nerve gas. The objects assayed with PINS range from softball-sized M139 chemical bomblets to 200 gallon DOT 500X ton containers. INL had previously examined2 the feasibility of using a similar system for the identification of explosives, and based on this proof-of-principle test, the development of a dedicated system for the identification of explosives in an improvised nuclear device appears entirely feasible. INL has been tasked by NNSA NA-42 Render Safe Research and Development with the development of such a system.

A generalization of the child-langmuir relation for one-dimensional time-dependent diodes

International Nuclear Information System (INIS)

Kadish, A.; Jones, M.E.; Peter, W.

1985-01-01

The steady-state Child-Langmuir relation between current and applied voltage has been a basic principle upon which all modern diode physics has been based. With advances in pulsed power technology and diode design, new devices which operate in vastly different parameter regimes have recently become of interest. Many of these devices cannot be said to satisfy the strict requirements necessary for Child-Langmuir flow. For instance, in a recent pulsed electron device for use in high-current accelerators, the applied voltage is sinusoidal in time. In another case, development of sources for heavy ion fusion necessitates understanding of transient current oscillations when the voltage is applied abruptly. We derive the time-dependent relationship between the emitted current and time-dependent applied voltage in a nonrelativistic planar diode. The relationship is valid for arbitrary voltage shapes V(t) applied to the diode for times less than the beam-front transit time across the gap. Using this relationship, transient and time-dependent effects in the start-up phase of any nonrelativistic diode can be analyzed

Inverse crystallization if Abrikosov vortex system at periodic pinning

CERN Document Server

Zyubin, M V; Kashurnikov, V A

2002-01-01

The vortex system in the quasi-two-dimensional HTSC plate is considered in the case of the periodic pinning. The M(H) magnetization curves by various values of the external magnetic field and different temperatures are calculated through the Monte Carlo method. It is shown that in the case of the periodic pinning the crystallization of the vortex system is possible by the temperature increase. A number of peculiarities conditioned by the impact of the pinning centers periodic lattice are identified on the magnetization curves. The pictures of the vortex distribution corresponding to various points on the M(H) curve are obtained

Flux pinning by voids in surface-oxidized superconducting niobium and vanadium

International Nuclear Information System (INIS)

Meij, G.P. van der.

1984-03-01

The volume pinning force in several niobium and vanadium samples with voids is determined at various temperatures. Reasonable agreement is found with the collective pinning theory of Larkin and Ovchinnikov above the field of maximum pinning, if the flux line lattice is assumed to be amorphous in this region and if the elementary pinning force is calculated from the quasi-classical theory of Thuneberg, Kurkijaervi, and Rainer. Also some history and relaxation effects are studied in an alternating field. A qualitative explanation is given in terms of flux line dislocations, which reduce the shear strength of the flux line lattice. (Auth.)

Pinning in BSCCO above the ordinary irreversibility line

Science.gov (United States)

Indenbom, M. V.; van der Beek, C. J.; Berseth, V.; Konczykowski, M.; Motohira, N.; Berger, H.; Benoit, W.

1996-12-01

Frequency-dependent observations of magnetic flux structures are used to show that pinning plays a principal role in the whole mixed state in Bi2Sr2CaCu2O8 (BSCCO) single crystals. We speculate that the random pinning force on the moving vortices may dominate over thermal fluctuations and considerably modify the position of the vortex lattice phase transition.

IMp: The customizable LEGO(®) Pinned Insect Manipulator.

Science.gov (United States)

Dupont, Steen; Price, Benjamin; Blagoderov, Vladimir

2015-01-01

We present a pinned insect manipulator (IMp) constructed of LEGO® building bricks with two axes of movement and two axes of rotation. In addition we present three variants of the IMp to emphasise the modular design, which facilitates resizing to meet the full range of pinned insect specimens, is fully customizable, collapsible, affordable and does not require specialist tools or knowledge to assemble.

A Flux-Pinning Mechanism for Segment Assembly and Alignment

Science.gov (United States)

Gersh-Range, Jessica A.; Arnold, William R.; Peck, Mason A.; Stahl, H. Philip

2011-01-01

Currently, the most compelling astrophysics questions include how planets and the first stars formed and whether there are protostellar disks that contain large organic molecules. Although answering these questions requires space telescopes with apertures of at least 10 meters, such large primaries are challenging to construct by scaling up previous designs; the limited capacity of a launch vehicle bounds the maximum diameter of a monolithic primary, and beyond a certain size, deployable telescopes cannot fit in current launch vehicle fairings. One potential solution is connecting the primary mirror segments edgewise using flux-pinning mechanisms, which are analogous to non-contacting damped springs. In the baseline design, a flux-pinning mechanism consists of a magnet and a superconductor separated by a predetermined gap, with the damping adjusted by placing aluminum near the interface. Since flux pinning is possible only when the superconductor is cooled below a critical temperature, flux-pinning mechanisms are uniquely suited for cryogenic space telescopes. By placing these mechanisms along the edges of the mirror segments, a primary can be built up over time. Since flux pinning requires no mechanical deployments, the assembly process could be robotic or use some other non-contacting scheme. Advantages of this approach include scalability and passive stability.

Spatial chaotic behavior of vortices in type-II superconductors with different pinning strength

International Nuclear Information System (INIS)

Lin, H.-T.; Pan, M.; Cheng, C.H.; Cui, Y.J.; Zhao, Y.

2008-01-01

Spatial chaotic character in systems where defects are arranged in periodic arrays has been investigated by computer simulation. Due to the high nonlinearity of the vortex-defect interaction, arrangement of the vortices in a periodic pinning array can be chaotic (glassy), depending on the vortex-defect interaction state and vortex-vortex interaction. Two types of disordered vortex states in the system are observed. The type-I disorder arises from the intrinsically chaotic nature of the nonlinear system, existing when the pinning disorder is low and the pinning strength is weak. The type-II disordered state is related to the pinning disorder, which is dominating when both the pinning disorder and the pinning strength are strong

Spatial chaotic behavior of vortices in type-II superconductors with different pinning strength

Energy Technology Data Exchange (ETDEWEB)

Lin, H.-T. [Faculty of Information Management, Cheng Shui University, Taiwan (China); Pan, M. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney (Australia); Cui, Y.J. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity R and D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney (Australia)], E-mail: yzhao@swjtu.edu.cn

2008-09-15

Spatial chaotic character in systems where defects are arranged in periodic arrays has been investigated by computer simulation. Due to the high nonlinearity of the vortex-defect interaction, arrangement of the vortices in a periodic pinning array can be chaotic (glassy), depending on the vortex-defect interaction state and vortex-vortex interaction. Two types of disordered vortex states in the system are observed. The type-I disorder arises from the intrinsically chaotic nature of the nonlinear system, existing when the pinning disorder is low and the pinning strength is weak. The type-II disordered state is related to the pinning disorder, which is dominating when both the pinning disorder and the pinning strength are strong.

Chirality dependent pinning and depinning of magnetic vortex domain walls at nano-constrictions

Energy Technology Data Exchange (ETDEWEB)

Mohanan P, Vineeth; Kumar, P.S. Anil, E-mail: anil@physics.iisc.ernet.in

2017-01-15

The implementation of magnetic domain wall (DW) based memory and logic devices critically depend on the control over DW assisted magnetization reversal processes. Here we investigate the magnetization reversal by DW injection, pinning and depinning at a geometrical constriction in permalloy nanowire (NW) driven by external in-plane magnetic field, using local electrical probes. The observations of two distinct depinning field values are identified with the help of micromagnetic simulations, as being due to vortex DWs of different chiralities. Statistical analysis gave an estimate of chirality dependent pinning probability of DWs at this constriction. The stochastic nature of the DW based reversal driven by magnetic field is revealed here. The asymmetry in the depinning field of the DWs to move to either side of constriction indicates the asymmetric nature of the barrier potential seen by the DWs. The results demonstrate the difficulties in achieving deterministic switching behavior of DW assisted reversal, and provide a platform to understand the main bottlenecks in the technological implementation of DWs.

Results of transient overpower events on breached and unbreached fuel pins

International Nuclear Information System (INIS)

Strain, R.V.; Tsai, H.C.; Neimark, L.A.; Aratani, K.

1986-04-01

The objective of the extended overpower tests on intact pins was to determine the pin cladding breaching thresholds vis-a-vis the Plant Protection System (PPS) trip settings, typically at ∼10 to 15% overpower. These tests emphasize slow operational-type transients in light of earlier work which suggested that irradiated mixed-oxide fuel pins may be particularly vulnerable in the slow ramp-rate regime. An overview of the extended overpower test series was previously reported. More recent results on two of the tests in this series are included in this paper. These two tests, designated TOPI-1A and TOPI-1B, were each conducted on a 19-pin assembly with various pin design, operation and burnup variables. The overpower ramp rates for the TOPI-1A and -1B tests were 0.1%/s and 10%/s, respectively

Long pulse diode experiments

Science.gov (United States)

McClenahan, Charles R.; Weber, Gerald J.; Omalley, Martin W.; Stewart, Joseph; Rinehart, Larry F.; Buttram, Malcolm T.

1990-10-01

A diode employing a thermionic cathode has produced 80 A beams at 200 kV for at least 6 microseconds. Moreover, the diode operates at rates as high as 1 Hz. EGUN simulations of the experimental geometry agree with the experiments. Finally, simulation of a proposed diode geometry predicts a 1 kA, 500 kV beam.

Generation of clusters in complex dynamical networks via pinning control

International Nuclear Information System (INIS)

Li Kezan; Fu Xinchu; Small, Michael

2008-01-01

Many real-world networks show community structure, i.e., groups (or clusters) of nodes that have a high density of links within them but with a lower density of links between them. In this paper, by applying feedback injections to a fraction of network nodes, various clusters are synchronized independently according to the community structure generated by the group partition of the network (cluster synchronization). This control is achieved by pinning (i.e. applying linear feedback control) to a subset of the network nodes. Those pinned nodes are selected not randomly but according to the topological structure of communities of a given network. Specifically, for a given group partition of a network, those nodes with direct connections between groups must be pinned in order to achieve cluster synchronization. Both the local stability and global stability of cluster synchronization are investigated. Taking the tree-shaped network and the most modular network as two particular examples, we illustrate in detail how the pinning strategy influences the generation of clusters. The simulations verify the efficiency of the pinning schemes used in this paper

Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

Energy Technology Data Exchange (ETDEWEB)

Drummond, T.J.

1999-03-11

Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

Pin1 and neurodegeneration: a new player for prion disorders?

Directory of Open Access Journals (Sweden)

Elisa Isopi

2015-07-01

Full Text Available Pin1 is a peptidyl-prolyl isomerase that catalyzes the cis/trans conversion of phosphorylated proteins at serine or threonine residues which precede a proline. The peptidyl-prolyl isomerization induces a conformational change of the proteins involved in cell signaling process. Pin1 dysregulation has been associated with some neurodegenerative disorders such as Alzheimer's disease, Parkinson's disease and Huntington's disease. Proline-directed phosphorylation is a common regulator of these pathologies and a recent work showed that it is also involved in prion disorders. In fact, prion protein phosphorylation at the Ser-43-Pro motif induces prion protein conversion into a disease-associated form. Furthermore, phosphorylation at Ser-43-Pro has been observed to increase in the cerebral spinal fluid of sporadic Creutzfeldt-Jakob Disease patients. These findings provide new insights into the pathogenesis of prion disorders, suggesting Pin1 as a potential new player in the disease. In this paper, we review the mechanisms underlying Pin1 involvement in the aforementioned neurodegenerative pathologies focusing on the potential role of Pin1 in prion disorders.

Finite Element Analysis of Laser Engineered Net Shape (LENS™) Tungsten Clad Squeeze Pins

Science.gov (United States)

Sakhuja, Amit; Brevick, Jerald R.

2004-06-01

In the aluminum high-pressure die-casting and indirect squeeze casting processes, local "squeeze" pins are often used to minimize internal solidification shrinkage in heavy casting sections. Squeeze pins frequently fail in service due to molten aluminum adhering to the H13 tool steel pins ("soldering"). A wide variety of coating materials and methods have been developed to minimize soldering on H13. However, these coatings are typically very thin, and experience has shown their performance on squeeze pins is highly variable. The LENS™ process was employed in this research to deposit a relatively thick tungsten cladding on squeeze pins. An advantage of this process was that the process parameters could be precisely controlled in order to produce a satisfactory cladding. Two fixtures were designed and constructed to enable the end and outer diameter (OD) of the squeeze pins to be clad. Analyses were performed on the clad pins to evaluate the microstructure and chemical composition of the tungsten cladding and the cladding-H13 substrate interface. A thermo-mechanical finite element analysis (FEA) was performed to assess the stress distribution as a function of cladding thickness on the pins during a typical casting thermal cycle. FEA results were validated via a physical test, where the clad squeeze pins were immersed into molten aluminum. Pins subjected to the test were evaluated for thermally induced cracking and resistance to soldering of the tungsten cladding.

Finite element analysis of laser engineered net shape (LENSTM) tungsten clad squeeze pins

International Nuclear Information System (INIS)

Sakhuja, Amit; Brevick, Jerald R.

2004-01-01

In the aluminum high-pressure die-casting and indirect squeeze casting processes, local 'squeeze' pins are often used to minimize internal solidification shrinkage in heavy casting sections. Squeeze pins frequently fail in service due to molten aluminum adhering to the H13 tool steel pins ('soldering'). A wide variety of coating materials and methods have been developed to minimize soldering on H13. However, these coatings are typically very thin, and experience has shown their performance on squeeze pins is highly variable. The LENS TM process was employed in this research to deposit a relatively thick tungsten cladding on squeeze pins. An advantage of this process was that the process parameters could be precisely controlled in order to produce a satisfactory cladding. Two fixtures were designed and constructed to enable the end and outer diameter (OD) of the squeeze pins to be clad. Analyses were performed on the clad pins to evaluate the microstructure and chemical composition of the tungsten cladding and the cladding-H13 substrate interface. A thermo-mechanical finite element analysis (FEA) was performed to assess the stress distribution as a function of cladding thickness on the pins during a typical casting thermal cycle. FEA results were validated via a physical test, where the clad squeeze pins were immersed into molten aluminum. Pins subjected to the test were evaluated for thermally induced cracking and resistance to soldering of the tungsten cladding

Modernization of RTC for fabrication of MOX fuel, Vibropac fuel pins and BN-600 FA with weapon grade plutonium

International Nuclear Information System (INIS)

Grachyov, A.F.; Kalygin, V.V.; Skiba, O.V.; Mayorshin, A. A.; Bychkov, A.V.; Kisly, V.A.; Ovsyannikov, Y.F.; Bobrov, D.A.; Mamontov, S.I.; Tsyganov, A.N.; Churutkin, E.I.; Davydov, P.I.; Samosenko, E.A; Shalak, A.R.; Ojima, Hisao

2004-01-01

Since mid 70's RIAR has been performing activities on plutonium involvement in fuel cycle. These activities are considered a stage within the framework of the closed fuel cycle development. Developed at RIAR fuel cycle is based on two technologies: 'dry' process of fuel reprocessing and vibro-packing method for fuel pin fabrication. Due to the available scientific capabilities and a gained experience in operating the technological facilities (ORYOL, SIC) for plutonium (various grade) blending into fuel for fast reactors, RIAR is a participant of the activities aimed at solving these tasks. Under international program RIAR with financial support of JNC (Japan) is modernizing the facility for granulated fuel production, vibro-pac fuel pins and FA fabrication to provide the BN-600 'hybrid' core. In order to provide 'hybrid' core it is necessary to produce (per year): - 1775 kg of granulated MOX-fuel, 6500 fuel pins, 50 fuel assemblies. Potential output of the facility under construction is as follows: - 1800 kg of granulated MOX-fuel per year, 40 fuel pins per shift, 200 FAs for the BN-600 reactor per year. Taking into account domestic and foreign experience in MOX-fuel production, different options were discussed of the equipment layouts in the available premises of chemical technological division of RIAR: - in the shielded manipulator boxes, in the existing hot cells. During construction of the facility in the building under operation the following requirements should be met: - facility must meet all standards and regulations set for nuclear facilities, installation work at the facility must not influence other production programs implemented in the building, engineering supply lines of the facility must be connected to the existing service lines of the building, cost of the activities must not exceed amount of JNC funding. The paper presents results of comparison between two options of the process equipment layout: in boxes and hot cells. This equipment is intended

Fabrication and characterization of 8.87 THz schottky barrier mixer diodes for mixer

Science.gov (United States)

Wang, Wenjie; Li, Qian; An, Ning; Tong, Xiaodong; Zeng, Jianping

2018-04-01

In this paper we report on the fabrication and characterization of GaAs-based THz schottky barrier mixer diodes. Considering the analyzed results as well as fabrication cost and complexity, a group of trade-off parameters was determined. Electron-beam lithography and air-bridge technique have been used to obtain schottky diodes with a cut off frequency of 8.87 THz. Equivalent values of series resistance, ideal factor and junction capacitance of 10.2 (1) Ω, 1.14 (0.03) and 1.76(0.03) respectively have been measured for 0.7um diameter anode devices by DC and RF measurements. The schottky barrier diodes fabrication process is fully planar and very suitable for integration in THz frequency multiplier and mixer circuits. THz Schottky barrier diodes based on such technology with 2 μm diameter anodes have been tested at 1.6 THz in a sub-harmonic mixer.

Technology of fabrication of silicon-lithium detector with superficial junction

International Nuclear Information System (INIS)

Cabal Rodriguez, A.E.; Diaz Garcia, A.; Noriega Scull, C.

1997-01-01

The Silicon nuclear radiation detectors transform the charge produced within the semiconductor crystal, product of the impinges of particles and X rays, in pulses of voltage at the output of the preamplifier. The planar Silicon-Lithium (Si(Li)) detector with superficial junction is basically a Pin structure diode. By mean of the diffusion and drift of Lithium in the Silicon a compensated or depletion region was created. There the incident radiation interacts with the Silicon, producing an electric signal proportional to the detector's energy deposited in the semiconductor. The technological process of fabrication this kind of detectors comprises several stages, some of them complex and of long duration. They also demand a systematic control. The technological process of Si(Li) detector's fabrication was carried out. The detector's fabrication electric characteristics were measured in some steps. An obtained device was mounted in the holder within a cryostat, in order to work to temperature of the liquid nitrogen. The energy resolution of the detector was measured and the value was 180 eV for the line of 5.9 KeV of an Fe-55 source. This value has allowed to work with the detector in energy disperse X-rays fluorescence. (author) [es

One- and two-dimension effects on fuel pin lifetime

International Nuclear Information System (INIS)

Stephen, J.D.; Biancheria, A.; Leibnitz, D.; O'Reilly, B.D.; Liu, Y.Y.; Labar, M.P.; Gneiting, B.C.

1979-01-01

Lifetime, or breach of the cladding, is a difficult performance limit to establish in fuel pin design. The significant benefits of high plant capacity factor favor conservative design to eliminate downtime or partial power operation caused by the breach limit; however, overly conservative design produces significant penalties. The LIFE system is being applied to help understand the range between operation and breach so that appropriate design margins can be selected. Standards are being developed in the USA to assure the structural integrity of all core components. These standards will provide guidelines to account for the failure mechanisms observed in the high temperature, high fluence core environment. The work to date indicates that creep rupture is the most important failure mechanism for mixed-oxide fuel pins during normal operation and slow power changes. The local cumulative creep rupture damage fraction (CDF) has been adopted as the parameter to assess the approach to failure. Several oxide breached pins and siblings have been studied For example, the P23B-73 pin was an FFTR driver design pin irradiated in EBR-II which failed at 10 at,% burnup. Initial evaluation based on LIFE3 led to the conclusion that the pin should not have failed. Further analyses determined the sensitivity of the breach prediction to the time-to-rupture correlation, cladding temperature, and fuel-fission product swelling (which had not been modeled in LIFE3). The uncertainties in the time-to-rupture correlation have been established. But LIFE is a one-dimensional model. The TWOD code is complete, and development of the best way to couple LIFE and TWOD for lifetime analysis is in progress. Two preliminary conclusions from analysis of representative oxide pin geometries are, first, that the circumferential stress distribution may not peak at the hot spot, but the damage (CDF) does. And second, that the effect of stress concentrations near fuel cracks on cladding creep damage is small

Latest development of display technologies

International Nuclear Information System (INIS)

Gao Hong-Yue; Yao Qiu-Xiang; Liu Pan; Zheng Zhi-Qiang; Liu Ji-Cheng; Zheng Hua-Dong; Zeng Chao; Yu Ying-Jie; Sun Tao; Zeng Zhen-Xiang

2016-01-01

In this review we will focus on recent progress in the field of two-dimensional (2D) and three-dimensional (3D) display technologies. We present the current display materials and their applications, including organic light-emitting diodes (OLEDs), flexible OLEDs quantum dot light emitting diodes (QLEDs), active-matrix organic light emitting diodes (AMOLEDs), electronic paper (E-paper), curved displays, stereoscopic 3D displays, volumetric 3D displays, light field 3D displays, and holographic 3D displays. Conventional 2D display devices, such as liquid crystal devices (LCDs) often result in ambiguity in high-dimensional data images because of lacking true depth information. This review thus provides a detailed description of 3D display technologies. (topical review)

Functional characterisation of parvulin-type peptidyl prolyl cis-trans isomerase, PinA in Dictyostelium discoideum

International Nuclear Information System (INIS)

Haokip, Nemneineng; Naorem, Aruna

2017-01-01

Pin1-type parvulins are unique among PPIases that can catalyse an otherwise slow cis-trans isomerisation of phosphorylated peptide bond preceding proline in target proteins. This prolyl isomerisation process can regulate activity, stability and localisation of target proteins and thus control cellular processes like eukaryotic cell proliferation, cell cycle progression and gene regulation. Towards understanding the function of Pin1-type prolyl isomerisation in Dictyostelium discoideum, a slime mould with distinct growth and developmental phases, we identified PinA as a novel Pin1-type parvulin by its ability to complement the temperature sensitivity phenotype associated with a mutation in ESS1 in S. cerevisiae. In D. discoideum, pinA is temporally and spatially regulated during growth and development. PinA is both nuclear as well as cytoplasmic in the growing cells. We further show that loss of pinA (pinA − ) leads to decreased growth rate, reduced spore formation and abnormal prespore-prestalk patterning. We conclude that PinA is required for normal growth as well as development in D. discoideum. - Highlights: • PinA is a bona fide homologue of S. cerevisiae Ess1. • PinA is required for normal cell proliferation of D. discoideum. • PinA is spatially localised in developmental structures. • PinA is important for cell differentiation and patterning.

Crystallinity and flux pinning properties of MgB2 bulks

International Nuclear Information System (INIS)

Yamamoto, A.; Shimoyama, J.; Ueda, S.; Katsura, Y.; Iwayama, I.; Horii, S.; Kishio, K.

2006-01-01

The relationship between flux pinning properties and crystallinity of MgB 2 bulks was systematically studied. Improved flux pinning properties under high fields were observed for samples with low crystallinity. Increased impurity scattering due to strain and defects in lattice corresponding to the degraded crystallinity was considered to enhance flux pinning strength at grain boundaries. Low-temperature synthesis and carbon substitution were confirmed to be effective for degrading crystallinity of MgB 2 bulks, resulting in high critical current properties under high fields

In 0.35Ga 0.65P light-emitting diodes grown by gas-source MBE

Science.gov (United States)

Masselink, W. Ted; Zachau, Martin

1993-02-01

This paper describes the growth and optical characteristics of In yGa 1- yP with 0.3Raman spectra of these undoped films and observe strong excitonic luminescence over the entire composition range investigated. The band gap derived from the luminescence excitation spectra corresponds to that of a fully relaxed InGaP film with no residual strain, which is confirmed by the Raman measurements. Light-emitting diodes with peak (300 K) emission centered at less than 590 nm have been fabricated from p-i-n junctions in In 0.35Ga 0.65P. This alloy is close to that with the largest direct band gap in the In yGa 1- y P system and has lattice mismatch from the GaAs substrate of 1%.

Laterally injected light-emitting diode and laser diode

Science.gov (United States)

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Los Alamos Hot-Cell-Facility modifications for examining FFTF fuel pins

International Nuclear Information System (INIS)

Campbell, B.M.; Ledbetter, J.M.

1982-01-01

Commissioned in 1960, the Wing 9 Hot Cell Facility at Los Alamos was recently modified to meet the needs of the 1980s. Because fuel pins from the Fast Flux Test Facility (FFTF) at the Hanford Engineering Development Laboratory (HEDL) are too long for examination in the original hot cells, we modified cells to accommodate longer fuel pins and to provide other capabilities as well. For instance, the T-3 shipping cask now can be opened in an inert atmosphere that can be maintained for all nondestructive and destructive examinations of the fuel pins. The full-length pins are visually examined and photographed, the wire wrap is removed, and fission gas is sampled. After the fuel pin is cropped, a cap is seal-welded on the section containing the fuel column. This section is then transferred to other cells for gamma-scanning, radiography, profilometry, sectioning for metallography, and chemical analysis

Velocity distribution measurement in wire-spaced fuel pin bundle

International Nuclear Information System (INIS)

Mizuta, Hiroshi; Ohtake, Toshihide; Uruwashi, Shinichi; Takahashi, Keiichi

1974-01-01

Flow distribution measurement was made in the subchannels of a pin bundle in air flow. The present paper is interim because the target of this work is the decision of temperature of the pin surface in contact with wire spacers. The wire-spaced fuel pin bundle used for the experiment consists of 37 simulated fuel pins of stainless steel tubes, 3000 mm in length and 31.6 mm in diameter, which are wound spirally with 6 mm stainless steel wire. The bundle is wrapped with a hexagonal tube, 3500 mm in length and 293 mm in flat-to-flat distance. The bundle is fixed with knock-bar at the entrance of air flow in the hexagonal tube. The pitch of pins in the bundle is 37.6 mm (P/D=1.19) and the wrapping pitch of wire is 1100 mm (H/D=34.8). A pair of arrow-type 5-hole Pitot tubes are used to measure the flow velocity and the direction of air flow in the pin bundle. The measurement of flow distribution was made with the conditions of air flow rate of 0.33 m 3 /sec, air temperature of 45 0 C, and average Reynolds number of 15100 (average air velocity of 20.6 m/sec.). It was found that circular flow existed in the down stream of wire spacers, that axial flow velocity was slower in the subchannels, which contained wire spacers, than in those not affected by the wire, and that the flow angle to the axial velocity at the boundary of subchannels was two thirds smaller than wire wrapping angle. (Tai, I.)

The Effect of Insertion Technique on Temperatures for Standard and Self-Drilling External Fixation Pins.

Science.gov (United States)

Manoogian, Sarah; Lee, Adam K; Widmaier, James C

2017-08-01

No studies have assessed the effects of parameters associated with insertion temperature in modern self-drilling external fixation pins. The current study assessed how varying the presence of irrigation, insertion speed, and force impacted the insertion temperatures of 2 types of standard and self-drilling external fixation half pins. Seventy tests were conducted with 10 trials for 4 conditions on self-drilling pins, and 3 conditions for standard pins. Each test used a thermocouple inside the pin to measure temperature rise during insertion. Adding irrigation to the standard pin insertion significantly lowered the maximum temperature (P drilling pin tests dropped average rise in temperature from 151.3 ± 21.6°C to 124.1 ± 15.3°C (P = 0.005). When the self-drilling pin insertion was decreased considerably from 360 to 60 rpm, the temperature decreased significantly from 151.3 ± 21.6°C to 109.6 ± 14.0°C (P drilling pin temperature increase was not significant. The standard pin had lower peak temperatures than the self-drilling pin for all conditions. Moreover, slowing down the insertion speed and adding irrigation helped mitigate the temperature increase of both pin types during insertion.

Significant improvement in the electrical characteristics of Schottky barrier diodes on molecularly modified Gallium Nitride surfaces

Science.gov (United States)

Garg, Manjari; Naik, Tejas R.; Pathak, C. S.; Nagarajan, S.; Rao, V. Ramgopal; Singh, R.

2018-04-01

III-Nitride semiconductors face the issue of localized surface states, which causes fermi level pinning and large leakage current at the metal semiconductor interface, thereby degrading the device performance. In this work, we have demonstrated the use of a Self-Assembled Monolayer (SAM) of organic molecules to improve the electrical characteristics of Schottky barrier diodes (SBDs) on n-type Gallium Nitride (n-GaN) epitaxial films. The electrical characteristics of diodes were improved by adsorption of SAM of hydroxyl-phenyl metallated porphyrin organic molecules (Zn-TPPOH) onto the surface of n-GaN. SAM-semiconductor bonding via native oxide on the n-GaN surface was confirmed using X-ray photoelectron spectroscopy measurements. Surface morphology and surface electronic properties were characterized using atomic force microscopy and Kelvin probe force microscopy. Current-voltage characteristics of different metal (Cu, Ni) SBDs on bare n-GaN were compared with those of Cu/Zn-TPPOH/n-GaN and Ni/Zn-TPPOH/n-GaN SBDs. It was found that due to the molecular monolayer, the surface potential of n-GaN was decreased by ˜350 mV. This caused an increase in the Schottky barrier height of Cu and Ni SBDs from 1.13 eV to 1.38 eV and 1.07 eV to 1.22 eV, respectively. In addition to this, the reverse bias leakage current was reduced by 3-4 orders of magnitude for both Cu and Ni SBDs. Such a significant improvement in the electrical performance of the diodes can be very useful for better device functioning.

Functionally different PIN proteins control auxin flux during bulbil development in Agave tequilana.

Science.gov (United States)

Abraham Juárez, María Jazmín; Hernández Cárdenas, Rocío; Santoyo Villa, José Natzul; O'Connor, Devin; Sluis, Aaron; Hake, Sarah; Ordaz-Ortiz, José; Terry, Leon; Simpson, June

2015-07-01

In Agave tequilana, reproductive failure or inadequate flower development stimulates the formation of vegetative bulbils at the bracteoles, ensuring survival in a hostile environment. Little is known about the signals that trigger this probably unique phenomenon in agave species. Here we report that auxin plays a central role in bulbil development and show that the localization of PIN1-related proteins is consistent with altered auxin transport during this process. Analysis of agave transcriptome data led to the identification of the A. tequilana orthologue of PIN1 (denoted AtqPIN1) and a second closely related gene from a distinct clade reported as 'Sister of PIN1' (denoted AtqSoPIN1). Quantitative real-time reverse transcription-PCR (RT-qPCR) analysis showed different patterns of expression for each gene during bulbil formation, and heterologous expression of the A. tequilana PIN1 and SoPIN1 genes in Arabidopsis thaliana confirmed functional differences between these genes. Although no free auxin was detected in induced pedicel samples, changes in the levels of auxin precursors were observed. Taken as a whole, the data support the model that AtqPIN1 and AtqSoPIN1 have co-ordinated but distinct functions in relation to auxin transport during the initial stages of bulbil formation. © The Author 2015. Published by Oxford University Press on behalf of the Society for Experimental Biology.

Fabrication of oxide dispersion strengthened ferritic clad fuel pins

International Nuclear Information System (INIS)

Zirker, L.R.; Bottcher, J.H.; Shikakura, S.; Tsai, C.L.

1991-01-01

A resistance butt welding procedure was developed and qualified for joining ferritic fuel pin cladding to end caps. The cladding are INCO MA957 and PNC ODS lots 63DSA and 1DK1, ferritic stainless steels strengthened by oxide dispersion, while the end caps are HT9 a martensitic stainless steel. With adequate parameter control the weld is formed without a residual melt phase and its strength approaches that of the cladding. This welding process required a new design for fuel pin end cap and weld joint. Summaries of the development, characterization, and fabrication processes are given for these fuel pins. 13 refs., 6 figs., 1 tab

Correlations between fuel pins irradiated in fast and thermal fluxes using the frump fuel pin modelling program

International Nuclear Information System (INIS)

Hayns, M.R.; Adam, J.

1975-08-01

There is no experimental facilities in which a fuel pin can be irradiated in a fast environment under well defined conditions of over power or flow run down. Consequently most of the infor mation which is being accumulated on the behaviour of fuel pins under severe conditions is obtained from either capsule or loop rigs in thermal reactors. It is the purpose of this paper to highlight the differences between the behaviour of fuel pins irradiated in a thermal flux and a fast flux. A typical set of conditions is taken from an overpower experiment in a thermal flux and the behaviour of the system is analysed using the fuel modelling program FRUMP. A second numerical experiment is then performed in which the same conditions prevail, except that a fast flux is assumed, the criterion for comparison being that the total power input to the system is the same in both cases. From the many possible correlations which result from such an exercise the fuel tempreature has been selected to highlight various important features of the two irradiations. It is demonstrated that the flux depression can cause differences in the pin behaviour, even to altering the order of events in a transient. For example fuel melting will occur at different times and at different positions in the fuel in the two cases. It is concluded that the techniques of fuel modelling, as typified in the program FRUMP can provide a very useful tool indeed for the analysis of such experiments and for guiding the establishment of the appropriate correlations for the extrapolation to the fast flux case. (author)

Interplay between collective pinning and artificial defects on domain wall propagation in Co/Pt multilayers

International Nuclear Information System (INIS)

Rodriguez-Rodriguez, G; Hierro-Rodriguez, A; Perez-Junquera, A; Montenegro, N; Alameda, J M; Velez, M; Menendez, J L; Ravelosona, D

2010-01-01

The interplay between collective pinning on intrinsic structural defects and artificial pinning at a patterned hole is studied in magnetic multilayers with perpendicular anisotropy. The pinning strength of a patterned hole is measured through its efficiency to stop domain wall (DW) propagation into a consecutive unpatterned nanowire section (using antisymmetric magnetoresistance to detect the direction of DW propagation) whereas collective pinning is characterized by the field dependence of DW velocity. Close to room temperature, collective pinning becomes weaker than artificial pinning so that pinning at the hole compensates nucleation-pad geometry, blocking DW propagation across the nanowire.

Testing program PIN on experiments reported in EPRI-NP-369

International Nuclear Information System (INIS)

Kunt, J.; Pazdera, F.

1980-03-01

The testing is described of the applicability of program PIN for the thermomechanical simulation of PWR fuel elements. Program PIN is a modified program GAPCON-THERMAL-2. Four modifications are presented mostly affecting the results, viz., the fuel restructuring model, the fuel densification model, the gaseous fission product release model, and the fuel cladding creep model. The results show that the initial data for simulating fuel element behaviour in accident situations are determined using program PIN with accuracy comparable to that using other programs. (J.P.)

Electric arc apparatus for severing split-pin assemblies of guide tubes of nuclear reactors