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Sample records for physical layer device

  1. Processes for multi-layer devices utilizing layer transfer

    Science.gov (United States)

    Nielson, Gregory N; Sanchez, Carlos Anthony; Tauke-Pedretti, Anna; Kim, Bongsang; Cederberg, Jeffrey; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2015-02-03

    A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.

  2. SU-8 Guiding Layer for Love Wave Devices

    Directory of Open Access Journals (Sweden)

    Michael I. Newton

    2007-11-01

    Full Text Available SU-8 is a technologically important photoresist used extensively for thefabrication of microfluidics and MEMS, allowing high aspect ratio structures to beproduced. In this work we report the use of SU-8 as a Love wave sensor guiding layerwhich allows the possibility of integrating a guiding layer with flow cell during fabrication.Devices were fabricated on ST-cut quartz substrates with a single-single finger design suchthat a surface skimming bulk wave (SSBW at 97.4 MHz was excited. SU-8 polymer layerswere successively built up by spin coating and spectra recorded at each stage; showing afrequency decrease with increasing guiding layer thickness. The insertion loss andfrequency dependence as a function of guiding layer thickness was investigated over thefirst Love wave mode. Mass loading sensitivity of the resultant Love wave devices wasinvestigated by deposition of multiple gold layers. Liquid sensing using these devices wasalso demonstrated; water-glycerol mixtures were used to demonstrate sensing of density-viscosity and the physical adsorption and removal of protein was also assessed usingalbumin and fibrinogen as model proteins.

  3. Atomic layer deposition for graphene device integration

    NARCIS (Netherlands)

    Vervuurt, R.H.J.; Kessels, W.M.M.; Bol, A.A.

    2017-01-01

    Graphene is a two dimensional material with extraordinary properties, which make it an interesting material for many optical and electronic devices. The integration of graphene in these devices often requires the deposition of thin dielectric layers on top of graphene. Atomic layer deposition (ALD)

  4. Encapsulation methods and dielectric layers for organic electrical devices

    Science.gov (United States)

    Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

    2013-07-02

    The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  5. Multi-layer micro/nanofluid devices with bio-nanovalves

    Science.gov (United States)

    Li, Hao; Ocola, Leonidas E.; Auciello, Orlando H.; Firestone, Millicent A.

    2013-01-01

    A user-friendly multi-layer micro/nanofluidic flow device and micro/nano fabrication process are provided for numerous uses. The multi-layer micro/nanofluidic flow device can comprise: a substrate, such as indium tin oxide coated glass (ITO glass); a conductive layer of ferroelectric material, preferably comprising a PZT layer of lead zirconate titanate (PZT) positioned on the substrate; electrodes connected to the conductive layer; a nanofluidics layer positioned on the conductive layer and defining nanochannels; a microfluidics layer positioned upon the nanofluidics layer and defining microchannels; and biomolecular nanovalves providing bio-nanovalves which are moveable from a closed position to an open position to control fluid flow at a nanoscale.

  6. Efficient light emitting devices based on phosphorescent partially doped emissive layers

    KAUST Repository

    Yang, Xiaohui

    2013-05-29

    We report efficient organic light emitting devices employing an ultrathin phosphor emissive layer. The electroluminescent spectra of these devices can be tuned by introducing a low-energy emitting phosphor layer into the emission zone. Devices with the emissive layer consisting of multiple platinum-complex/spacer layer cells show a peak external quantum efficiency of 18.1%, which is among the best EQE values for platinum-complex based light emitting devices. Devices with an ultrathin phosphor emissive layer show stronger luminance decay with the operating time compared to the counterpart devices having a host-guest emissive layer.

  7. Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

    KAUST Repository

    Eita, Mohamed S.

    2016-08-04

    An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.

  8. Securing Wireless Communications of the Internet of Things from the Physical Layer, An Overview

    Science.gov (United States)

    Zhang, Junqing; Duong, Trung; Woods, Roger; Marshall, Alan

    2017-08-01

    The security of the Internet of Things (IoT) is receiving considerable interest as the low power constraints and complexity features of many IoT devices are limiting the use of conventional cryptographic techniques. This article provides an overview of recent research efforts on alternative approaches for securing IoT wireless communications at the physical layer, specifically the key topics of key generation and physical layer encryption. These schemes can be implemented and are lightweight, and thus offer practical solutions for providing effective IoT wireless security. Future research to make IoT-based physical layer security more robust and pervasive is also covered.

  9. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    Science.gov (United States)

    Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  10. Physical Layer Design in Wireless Sensor Networks for Fading Mitigation

    Directory of Open Access Journals (Sweden)

    Nuo Chen

    2013-09-01

    Full Text Available This paper presents the theoretical analysis, simulation results and suggests design in digital technology of a physical layer for wireless sensor networks. The proposed design is able to mitigate fading inside communication channel. To mitigate fading the chip interleaving technique is proposed. For the proposed theoretical model of physical layer, a rigorous mathematical analysis is conducted, where all signals are presented and processed in discrete time domain form which is suitable for further direct processing necessary for devices design in digital technology. Three different channels are used to investigate characteristics of the physical layer: additive white Gaussian noise channel (AWGN, AWG noise and flat fading channel and AWG noise and flat fading channel with interleaver and deinterleaver blocks in the receiver and transmitter respectively. Firstly, the mathematical model of communication system representing physical layer is developed based on the discrete time domain signal representation and processing. In the existing theory, these signals and their processing are represented in continuous time form, which is not suitable for direct implementation in digital technology. Secondly, the expressions for the probability of chip, symbol and bit error are derived. Thirdly, the communication system simulators are developed in MATLAB. The simulation results confirmed theoretical findings.

  11. Physics of photonic devices

    CERN Document Server

    Chuang, Shun Lien

    2009-01-01

    The most up-to-date book available on the physics of photonic devices This new edition of Physics of Photonic Devices incorporates significant advancements in the field of photonics that have occurred since publication of the first edition (Physics of Optoelectronic Devices). New topics covered include a brief history of the invention of semiconductor lasers, the Lorentz dipole method and metal plasmas, matrix optics, surface plasma waveguides, optical ring resonators, integrated electroabsorption modulator-lasers, and solar cells. It also introduces exciting new fields of research such as:

  12. Magnetic tunnel junction device having an intermediate layer

    NARCIS (Netherlands)

    2001-01-01

    A magnetic tunnel junction device has a multi-layer structure including a pair of electrode layers of a ferromagnetic material and a tunnel barrier layer of an insulating material between the electrode layers. In order to realize a low resistance, the multi-layer structure also includes an

  13. White-electroluminescent device with horizontally patterned blue/yellow phosphor-layer structure

    International Nuclear Information System (INIS)

    Won Park, Boo; Sik Choi, Nam; Won Park, Kwang; Mo Son, So; Kim, Jong Su; Kyun Shon, Pong

    2007-01-01

    White-electroluminescent (EL) devices with stripe-patterned and square-patterned phosphor-layer structures are fabricated through a screen printing method: electrode/BaTiO 3 insulator layer/patterned blue ZnS:Cu, Cl and yellow ZnS:Cu, Mn phosphor layer/ITO PET substrate. The luminous intensities of EL devices with stripe-patterned and square-patterned phosphor-layer structures are 33% and 23% higher than a conventional device with the phosphor-layer structure without any patterns using the phosphor blend. It can be explained in terms of the absorption of the emitted blue light of blue phosphor layer by the yellow-emitting phosphor layer. The EL device of our patterned phosphor-layer structure gives the possibility to enhance the luminance

  14. Organic photovoltaic devices with a single layer geometry (Conference Presentation)

    Science.gov (United States)

    Kolesov, Vladimir A.; Fuentes-Hernandez, Canek; Aizawa, Naoya; Larrain, Felipe A.; Chou, Wen-Fang; Perrotta, Alberto; Graham, Samuel; Kippelen, Bernard

    2016-09-01

    Organic photovoltaics (OPV) can lead to a low cost and short energy payback time alternative to existing photovoltaic technologies. However, to fulfill this promise, power conversion efficiencies must be improved and simultaneously the architecture of the devices and their processing steps need to be further simplified. In the most efficient devices to date, the functions of photocurrent generation, and hole/electron collection are achieved in different layers adding complexity to the device fabrication. In this talk, we present a novel approach that yields devices in which all these functions are combined in a single layer. Specifically, we report on bulk heterojunction devices in which amine-containing polymers are first mixed in the solution together with the donor and acceptor materials that form the active layer. A single-layer coating yields a self-forming bottom electron-collection layer comprised of the amine-containing polymer (e.g. PEIE). Hole-collection is achieved by subsequent immersion of this single layer in a solution of a polyoxometalate (e.g. phosphomolybdic acid (PMA)) leading to an electrically p-doped region formed by the diffusion of the dopant molecules into the bulk. The depth of this doped region can be controlled with values up to tens of nm by varying the immersion time. Devices with a single 500 nm-thick active layer of P3HT:ICBA processed using this method yield power conversion efficiency (PCE) values of 4.8 ± 0.3% at 1 sun and demonstrate a performance level superior to that of benchmark three-layer devices with separate layers of PEIE/P3HT:ICBA/MoOx (4.1 ± 0.4%). Devices remain stable after shelf lifetime experiments carried-out at 60 °C over 280 h.

  15. Efficient organic light-emitting devices with platinum-complex emissive layer

    KAUST Repository

    Yang, Xiaohui

    2011-01-18

    We report efficient organic light-emitting devices having a platinum-complex emissive layer with the peak external quantum efficiency of 17.5% and power efficiency of 45 lm W−1. Variation in the device performance with platinum-complex layer thickness can be attributed to the interplay between carrier recombination and intermolecular interactions in the layer. Efficient white devices using double platinum-complex layers show the external quantum efficiency of 10%, the Commission Internationale d’Énclairage coordinates of (0.42, 0.41), and color rendering index of 84 at 1000 cd m−2.

  16. Efficient organic light-emitting devices with platinum-complex emissive layer

    KAUST Repository

    Yang, Xiaohui; Wu, Fang-Iy; Haverinen, Hanna; Li, Jian; Cheng, Chien-Hong; Jabbour, Ghassan E.

    2011-01-01

    We report efficient organic light-emitting devices having a platinum-complex emissive layer with the peak external quantum efficiency of 17.5% and power efficiency of 45 lm W−1. Variation in the device performance with platinum-complex layer thickness can be attributed to the interplay between carrier recombination and intermolecular interactions in the layer. Efficient white devices using double platinum-complex layers show the external quantum efficiency of 10%, the Commission Internationale d’Énclairage coordinates of (0.42, 0.41), and color rendering index of 84 at 1000 cd m−2.

  17. Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

    KAUST Repository

    Eita, Mohamed S.; El, Labban Abdulrahman; Usman, Anwar; Beaujuge, Pierre; Mohammed, Omar F.

    2016-01-01

    An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc

  18. Thin film photovoltaic devices with a minimally conductive buffer layer

    Science.gov (United States)

    Barnes, Teresa M.; Burst, James

    2016-11-15

    A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

  19. Photovoltaic device comprising compositionally graded intrinsic photoactive layer

    Science.gov (United States)

    Hoffbauer, Mark A; Williamson, Todd L

    2013-04-30

    Photovoltaic devices and methods of making photovoltaic devices comprising at least one compositionally graded photoactive layer, said method comprising providing a substrate; growing onto the substrate a uniform intrinsic photoactive layer having one surface disposed upon the substrate and an opposing second surface, said intrinsic photoactive layer consisting essentially of In.sub.1-xA.sub.xN,; wherein: i. 0.ltoreq.x.ltoreq.1; ii. A is gallium, aluminum, or combinations thereof; and iii. x is at least 0 on one surface of the intrinsic photoactive layer and is compositionally graded throughout the layer to reach a value of 1 or less on the opposing second surface of the layer; wherein said intrinsic photoactive layer is isothermally grown by means of energetic neutral atom beam lithography and epitaxy at a temperature of 600.degree. C. or less using neutral nitrogen atoms having a kinetic energy of from about 1.0 eV to about 5.0 eV, and wherein the intrinsic photoactive layer is grown at a rate of from about 5 nm/min to about 100 nm/min.

  20. Efficient light emitting devices based on phosphorescent partially doped emissive layers

    KAUST Repository

    Yang, Xiaohui; Jabbour, Ghassan E.

    2013-01-01

    We report efficient organic light emitting devices employing an ultrathin phosphor emissive layer. The electroluminescent spectra of these devices can be tuned by introducing a low-energy emitting phosphor layer into the emission zone. Devices

  1. Selective Excitation of Window and Buffer Layers in Chalcopyrite Devices and Modules

    Energy Technology Data Exchange (ETDEWEB)

    Glynn, Stephen [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Repins, Ingrid L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Burst, James M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Beall, Carolyn L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bowers, Karen A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Mansfield, Lorelle M [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2018-02-02

    Window and buffer layers in chalcopyrite devices are well known to affect junctions, conduction, and photo-absorption properties of the device. Some of these layers, particularly 'buffers,' which are deposited directly on top of the absorber, exhibit metastable effects upon exposure to light. Thus, to understand device performance and/or metastability, it is sometimes desirable to selectively excite different layers in the device stack. Absorption characteristics of various window and buffer layers used in chalcopyrite devices are measured. These characteristics are compared with emission spectra of common and available light sources that might be used to optically excite such layers. Effects of the window and buffer absorption on device quantum efficiency and metastability are discussed. For the case of bath-deposited Zn(O,S) buffers, we conclude that this layer is not optically excited in research devices or modules. This provides a complimentary mechanism to the chemical differences that may cause long time constants (compared to devices with CdS buffers) associated with reaching a stable 'light-soaked' state.

  2. Compliant Interfacial Layers in Thermoelectric Devices

    Science.gov (United States)

    Firdosy, Samad A. (Inventor); Li, Billy Chun-Yip (Inventor); Ravi, Vilupanur A. (Inventor); Fleurial, Jean-Pierre (Inventor); Caillat, Thierry (Inventor); Anjunyan, Harut (Inventor)

    2017-01-01

    A thermoelectric power generation device is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.

  3. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  4. Magneto-electroluminescence effects in the single-layer organic light-emitting devices with macrocyclic aromatic hydrocarbons

    Directory of Open Access Journals (Sweden)

    S.-T. Pham

    2018-02-01

    Full Text Available Magneto-electroluminescence (MEL effects are observed in single-layer organic light-emitting devices (OLEDs comprising only macrocyclic aromatic hydrocarbons (MAHs. The fluorescence devices were prepared using synthesized MAHs, namely, [n]cyclo-meta-phenylene ([n]CMP, n = 5, 6. The MEL ratio of the resulting OLED is 1%–2% in the spectral wavelength range of 400-500 nm, whereas it becomes negative (−1.5% to −2% in the range from 650 to 700 nm. The possible physical origins of the sign change in the MEL are discussed. This wavelength-dependent sign change in the MEL ratio could be a unique function for future single-layer OLEDs capable of magnetic-field-induced color changes.

  5. Magneto-electroluminescence effects in the single-layer organic light-emitting devices with macrocyclic aromatic hydrocarbons

    Science.gov (United States)

    Pham, S.-T.; Ikemoto, K.; Suzuki, K. Z.; Izumi, T.; Taka, H.; Kita, H.; Sato, S.; Isobe, H.; Mizukami, S.

    2018-02-01

    Magneto-electroluminescence (MEL) effects are observed in single-layer organic light-emitting devices (OLEDs) comprising only macrocyclic aromatic hydrocarbons (MAHs). The fluorescence devices were prepared using synthesized MAHs, namely, [n]cyclo-meta-phenylene ([n]CMP, n = 5, 6). The MEL ratio of the resulting OLED is 1%-2% in the spectral wavelength range of 400-500 nm, whereas it becomes negative (-1.5% to -2%) in the range from 650 to 700 nm. The possible physical origins of the sign change in the MEL are discussed. This wavelength-dependent sign change in the MEL ratio could be a unique function for future single-layer OLEDs capable of magnetic-field-induced color changes.

  6. New Layered Materials and Functional Nanoelectronic Devices

    Science.gov (United States)

    Yu, Jaeeun

    This thesis introduces functional nanomaterials including superatoms and carbon nanotubes (CNTs) for new layered solids and molecular devices. Chapters 1-3 present how we incorporate superatoms into two-dimensional (2D) materials. Chapter 1 describes a new and simple approach to dope transition metal dichalcogenides (TMDCs) using the superatom Co6Se8(PEt3)6 as the electron dopant. Doping is an effective method to modulate the electrical properties of materials, and we demonstrate an electron-rich cluster can be used as a tunable and controllable surface dopant for semiconducting TMDCs via charge transfer. As a demonstration of the concept, we make a p-n junction by patterning on specific areas of TMDC films. Chapter 2 and Chapter 3 introduce new 2D materials by molecular design of superatoms. Traditional atomic van der Waals materials such as graphene, hexagonal boron-nitride, and TMDCs have received widespread attention due to the wealth of unusual physical and chemical behaviors that arise when charges, spins, and vibrations are confined to a plane. Though not as widespread as their atomic counterparts, molecule-based layered solids offer significant benefits; their structural flexibility will enable the development of materials with tunable properties. Chapter 2 describes a layered van der Waals solid self-assembled from a structure-directing building block and C60 fullerene. The resulting crystalline solid contains a corrugated monolayer of neutral fullerenes and can be mechanically exfoliated. Chapter 3 describes a new method to functionalize electroactive superatoms with groups that can direct their assembly into covalent and non-covalent multi-dimensional frameworks. We synthesized Co6Se8[PEt2(4-C6H4COOH)]6 and found that it forms two types of crystalline assemblies with Zn(NO3)2, one is a three-dimensional solid and the other consists of stacked layers of two-dimensional sheets. The dimensionality is controlled by subtle changes in reaction conditions. CNT

  7. Organic photovoltaic device with interfacial layer and method of fabricating same

    Science.gov (United States)

    Marks, Tobin J.; Hains, Alexander W.

    2013-03-19

    An organic photovoltaic device and method of forming same. In one embodiment, the organic photovoltaic device has an anode, a cathode, an active layer disposed between the anode and the cathode; and an interfacial layer disposed between the anode and the active layer, the interfacial layer comprising 5,5'-bis[(p-trichlorosilylpropylphenyl)phenylamino]-2,2'-bithiophene (PABTSi.sub.2).

  8. The Role of Physical Layer Security in IoT: A Novel Perspective

    Directory of Open Access Journals (Sweden)

    Tommaso Pecorella

    2016-08-01

    Full Text Available This paper deals with the problem of securing the configuration phase of an Internet of Things (IoT system. The main drawbacks of current approaches are the focus on specific techniques and methods, and the lack of a cross layer vision of the problem. In a smart environment, each IoT device has limited resources and is often battery operated with limited capabilities (e.g., no keyboard. As a consequence, network security must be carefully analyzed in order to prevent security and privacy issues. In this paper, we will analyze the IoT threats, we will propose a security framework for the device initialization and we will show how physical layer security can effectively boost the security of IoT systems.

  9. Method of forming a nanocluster comprising dielectric layer and device comprising such a layer

    NARCIS (Netherlands)

    2009-01-01

    A method of forming a dielectric layer (330) on a further layer (114, 320) of a semiconductor device (300) is disclosed. The method comprises depositing a dielectric precursor compound and a further precursor compound over the further layer (114, 320), the dielectric precursor compound comprising a

  10. Device Physics of Narrow Gap Semiconductors

    CERN Document Server

    Chu, Junhao

    2010-01-01

    Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

  11. Near-infrared electroluminescence from double-emission-layers devices based on Ytterbium (III) complexes

    International Nuclear Information System (INIS)

    Li Zhefeng; Zhang Hongjie; Yu Jiangbo

    2012-01-01

    We investigated near-infrared electroluminescence properties of two lanthanide complexes Yb(PMBP) 3 Bath [PMBP = tris(1-phenyl-3-methyl-4-(4-tert-butylbenzacyl)-5-pyrazolone); Bath = bathophenanthroline] and Yb(PMIP) 3 TP 2 [PMIP = tris(1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone); TP = triphenyl phosphine oxide] by fabricated the double-emission-layers devices. From the device characteristics, it is known that holes are easier to transport in Yb(PMIP) 3 TP 2 layer and electrons are easier to transport in Yb(PMBP) 3 Bath layer, at the same time, both of the two complexes can be acted as emission layers in the device. The recombination region of carriers has been confined in the interface of Yb(PMIP) 3 TP 2 /Yb(PMBP) 3 Bath, and pure Yb 3+ ion characteristic emission centered at 980 nm has been obtained. The device shows the maximum near-infrared irradiance as 14.7 mW/m 2 at the applied voltage of 17.8 V. - Highlights: ► Near-infrared electroluminescent devices with Yb(III) complexes as emission layers. ► Double-emission layer device structure introduced to balance carriers. ► Improved performance of double-emission layer device.

  12. Investigation of fundamental physical properties of CdSiP{sub 2} and its application in solar cell devices by using (ZnX; X = Se, Te) buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Verma, A.S., E-mail: ajay_phy@rediffmail.com [Department of Physics, Banasthali Vidyapith, Rajasthan 304022 (India); Gautam, Ruchita; Singh, Pravesh [Department of Physics, Banasthali Vidyapith, Rajasthan 304022 (India); Department of Electronics and Communication, Krishna Institute of Engineering and Technology, Ghaziabad, Uttar Pradesh 201206 (India); Sharma, Sheetal [Department of Physics, Swami Premanand Mahavidyalaya, Mukerian, Punjab 144211 (India); Kumari, Sarita [Department of Physics, University of Rajasthan, Jaipur 302004 (India)

    2016-03-15

    Graphical abstract: - Highlights: • FP-LAPW method has been used to compute the solid state properties of CdSiP{sub 2}. • Electronic and optical properties reported by WIEN2K with recently developed mBJ potential. • The elastic and thermal properties were evaluated by first principles calculations. • Hardness was calculated for the first time at different temperature and pressure. • Solar cell devices with ZnSe/ZnTe buffer layers by simulated work. - Abstract: The first principles calculations were performed by the linearized augmented plane wave (LAPW) method as implemented in the WIEN2K code within the density functional theory to obtain the structural, electronic and optical properties of CdSiP{sub 2} in the body centered tetragonal (BCT) phase. The six elastic constants (C{sub 11}, C{sub 12}, C{sub 13}, C{sub 33}, C{sub 44} and C{sub 66}) and mechanical parameters were presented and compared with the available experimental data. The thermodynamic calculations within the quasi-harmonic approximation is used to give an accurate description of the pressure-temperature dependence of the thermal-expansion coefficient, bulk modulus, specific heat, Debye temperature, entropy Grüneisen parameters and hardness. Further, CdSiP{sub 2} solar cell devices have been modeled; device physics and performance parameters are analyzed for zinc chalcogenide (ZnX; X = Se, Te) buffer layers. Simulation results for CdSiP{sub 2} thin layer solar cell show the maximum efficiency (25.7%) with ZnSe as the buffer layer.

  13. Thermal insulation layer for the vacuum containers of a thermonuclear device

    International Nuclear Information System (INIS)

    Nishikawa, Masana; Yamada, Masao; Kameari, Akihisa; Niikura, Setsuo.

    1980-01-01

    Purpose: To prevent temperature rise of a thermal insulation layer for a vacuum container of a thermonuclear device higher than allowable value when irradiated by neutron by constructing the layer of a cooling unit in thermal insulation material. Constitution: A metal plate attached with cooling pipes is buried in a thermal insulation material forming a thermal insulation layer to form the layer provided between a vacuum container of a thermonuclear device and a shield. (Yoshihara, H.)

  14. Physical layer simulation study for the coexistence of WLAN standards

    Energy Technology Data Exchange (ETDEWEB)

    Howlader, M. K. [Marquette Univ., 222 Haggerty Hall, P. O. Box 1881, Milwaukee, WI 53201 (United States); Keiger, C. [Analysis and Measurement Services Corporation, 9111 Cross Park Drive, Knoxville, TN 37923 (United States); Ewing, P. D. [Oak Ridge National Laboratory, MS-6006, P. O. Box 2008, Oak Ridge, TN 37831 (United States); Govan, T. V. [U.S. Nuclear Regulatory Commission, MS T-10-D20, 11545 Rockville Pike, Rockville, MD 20852 (United States)

    2006-07-01

    This paper presents the results of a study on the performance of wireless local area network (WLAN) devices in the presence of interference from other wireless devices. To understand the coexistence of these wireless protocols, simplified physical-layer-system models were developed for the Bluetooth, Wireless Fidelity (WiFi), and Zigbee devices, all of which operate within the 2.4-GHz frequency band. The performances of these protocols were evaluated using Monte-Carlo simulations under various interference and channel conditions. The channel models considered were basic additive white Gaussian noise (AWGN), Rayleigh fading, and site-specific fading. The study also incorporated the basic modulation schemes, multiple access techniques, and channel allocations of the three protocols. This research is helping the U.S. Nuclear Regulatory Commission (NRC) understand the coexistence issues associated with deploying wireless devices and could prove useful in the development of a technical basis for guidance to address safety-related issues with the implementation of wireless systems in nuclear facilities. (authors)

  15. Physical layer simulation study for the coexistence of WLAN standards

    International Nuclear Information System (INIS)

    Howlader, M. K.; Keiger, C.; Ewing, P. D.; Govan, T. V.

    2006-01-01

    This paper presents the results of a study on the performance of wireless local area network (WLAN) devices in the presence of interference from other wireless devices. To understand the coexistence of these wireless protocols, simplified physical-layer-system models were developed for the Bluetooth, Wireless Fidelity (WiFi), and Zigbee devices, all of which operate within the 2.4-GHz frequency band. The performances of these protocols were evaluated using Monte-Carlo simulations under various interference and channel conditions. The channel models considered were basic additive white Gaussian noise (AWGN), Rayleigh fading, and site-specific fading. The study also incorporated the basic modulation schemes, multiple access techniques, and channel allocations of the three protocols. This research is helping the U.S. Nuclear Regulatory Commission (NRC) understand the coexistence issues associated with deploying wireless devices and could prove useful in the development of a technical basis for guidance to address safety-related issues with the implementation of wireless systems in nuclear facilities. (authors)

  16. Dark current of organic heterostructure devices with insulating spacer layers

    Science.gov (United States)

    Yin, Sun; Nie, Wanyi; Mohite, Aditya D.; Saxena, Avadh; Smith, Darryl L.; Ruden, P. Paul

    2015-03-01

    The dark current density at fixed voltage bias in donor/acceptor organic planar heterostructure devices can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of an interfacial exciplex state. If the exciplex formation rate limits current flow, the insulating interface layer can increase dark current whereas, if the exciplex recombination rate limits current flow, the insulating interface layer decreases dark current. We present a device model to describe this behavior and illustrate it experimentally for various donor/acceptor systems, e.g. P3HT/LiF/C60.

  17. Simulation study of 14-nm-gate III-V trigate field effect transistor devices with In1−xGaxAs channel capping layer

    Directory of Open Access Journals (Sweden)

    Cheng-Hao Huang

    2015-06-01

    Full Text Available In this work, we study characteristics of 14-nm-gate InGaAs-based trigate MOSFET (metal-oxide-semiconductor field effect transistor devices with a channel capping layer. The impacts of thickness and gallium (Ga concentration of the channel capping layer on the device characteristic are firstly simulated and optimized by using three-dimensional quantum-mechanically corrected device simulation. Devices with In1−xGaxAs/In0.53Ga0.47As channels have the large driving current owing to small energy band gap and low alloy scattering at the channel surface. By simultaneously considering various physical and switching properties, a 4-nm-thick In0.68Ga0.32As channel capping layer can be adopted for advanced applications. Under the optimized channel parameters, we further examine the effects of channel fin angle and the work-function fluctuation (WKF resulting from nano-sized metal grains of NiSi gate on the characteristic degradation and variability. To maintain the device characteristics and achieve the minimal variation induced by WKF, the physical findings of this study indicate a critical channel fin angle of 85o is needed for the device with an averaged grain size of NiSi below 4x4 nm2.

  18. Functional Basis for Efficient Physical Layer Classical Control in Quantum Processors

    Science.gov (United States)

    Ball, Harrison; Nguyen, Trung; Leong, Philip H. W.; Biercuk, Michael J.

    2016-12-01

    The rapid progress seen in the development of quantum-coherent devices for information processing has motivated serious consideration of quantum computer architecture and organization. One topic which remains open for investigation and optimization relates to the design of the classical-quantum interface, where control operations on individual qubits are applied according to higher-level algorithms; accommodating competing demands on performance and scalability remains a major outstanding challenge. In this work, we present a resource-efficient, scalable framework for the implementation of embedded physical layer classical controllers for quantum-information systems. Design drivers and key functionalities are introduced, leading to the selection of Walsh functions as an effective functional basis for both programing and controller hardware implementation. This approach leverages the simplicity of real-time Walsh-function generation in classical digital hardware, and the fact that a wide variety of physical layer controls, such as dynamic error suppression, are known to fall within the Walsh family. We experimentally implement a real-time field-programmable-gate-array-based Walsh controller producing Walsh timing signals and Walsh-synthesized analog waveforms appropriate for critical tasks in error-resistant quantum control and noise characterization. These demonstrations represent the first step towards a unified framework for the realization of physical layer controls compatible with large-scale quantum-information processing.

  19. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

    Energy Technology Data Exchange (ETDEWEB)

    Hutchinson, David [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy NY 12180 (United States); Department of Physics and Nuclear Engineering, United States Military Academy, West Point NY 10996 (United States); Mathews, Jay [US Army ARDEC – Benét Laboratories, Watervliet NY 12189 (United States); Department of Physics, University of Dayton, Dayton, OH 45469 (United States); Sullivan, Joseph T.; Buonassisi, Tonio [School of Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 (United States); Akey, Austin [School of Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 (United States); Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge MA 02138 (United States); Aziz, Michael J. [Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge MA 02138 (United States); Persans, Peter [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy NY 12180 (United States); Warrender, Jeffrey M., E-mail: jwarrend@post.harvard.edu [US Army ARDEC – Benét Laboratories, Watervliet NY 12189 (United States)

    2016-05-15

    We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

  20. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

    Directory of Open Access Journals (Sweden)

    David Hutchinson

    2016-05-01

    Full Text Available We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

  1. Impact of AlO x layer on resistive switching characteristics and device-to-device uniformity of bilayered HfO x -based resistive random access memory devices

    Science.gov (United States)

    Chuang, Kai-Chi; Chung, Hao-Tung; Chu, Chi-Yan; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Cheng, Huang-Chung

    2018-06-01

    An AlO x layer was deposited on HfO x , and bilayered dielectric films were found to confine the formation locations of conductive filaments (CFs) during the forming process and then improve device-to-device uniformity. In addition, the Ti interposing layer was also adopted to facilitate the formation of oxygen vacancies. As a result, the resistive random access memory (RRAM) device with TiN/Ti/AlO x (1 nm)/HfO x (6 nm)/TiN stack layers demonstrated excellent device-to-device uniformity although it achieved slightly larger resistive switching characteristics, which were forming voltage (V Forming) of 2.08 V, set voltage (V Set) of 1.96 V, and reset voltage (V Reset) of ‑1.02 V, than the device with TiN/Ti/HfO x (6 nm)/TiN stack layers. However, the device with a thicker 2-nm-thick AlO x layer showed worse uniformity than the 1-nm-thick one. It was attributed to the increased oxygen atomic percentage in the bilayered dielectric films of the 2-nm-thick one. The difference in oxygen content showed that there would be less oxygen vacancies to form CFs. Therefore, the random growth of CFs would become severe and the device-to-device uniformity would degrade.

  2. PREFACE: INERA Workshop: Transition Metal Oxide Thin Films-functional Layers in "Smart windows" and Water Splitting Devices. Parallel session of the 18th International School on Condensed Matter Physics

    Science.gov (United States)

    2014-11-01

    The Special issue presents the papers for the INERA Workshop entitled "Transition Metal Oxides as Functional Layers in Smart windows and Water Splitting Devices", which was held in Varna, St. Konstantin and Elena, Bulgaria, from the 4th-6th September 2014. The Workshop is organized within the context of the INERA "Research and Innovation Capacity Strengthening of ISSP-BAS in Multifunctional Nanostructures", FP7 Project REGPOT 316309 program, European project of the Institute of Solid State Physics at the Bulgarian Academy of Sciences. There were 42 participants at the workshop, 16 from Sweden, Germany, Romania and Hungary, 11 invited lecturers, and 28 young participants. There were researchers present from prestigious European laboratories which are leaders in the field of transition metal oxide thin film technologies. The event contributed to training young researchers in innovative thin film technologies, as well as thin films characterization techniques. The topics of the Workshop cover the field of technology and investigation of thin oxide films as functional layers in "Smart windows" and "Water splitting" devices. The topics are related to the application of novel technologies for the preparation of transition metal oxide films and the modification of chromogenic properties towards the improvement of electrochromic and termochromic device parameters for possible industrial deployment. The Workshop addressed the following topics: Metal oxide films-functional layers in energy efficient devices; Photocatalysts and chemical sensing; Novel thin film technologies and applications; Methods of thin films characterizations; From the 37 abstracts sent, 21 manuscripts were written and later refereed. We appreciate the comments from all the referees, and we are grateful for their valuable contributions. Guest Editors: Assoc. Prof. Dr.Tatyana Ivanova Prof. DSc Kostadinka Gesheva Prof. DSc Hassan Chamatti Assoc. Prof. Dr. Georgi Popkirov Workshop Organizing Committee Prof

  3. Effect of dielectric layers on device stability of pentacene-based field-effect transistors.

    Science.gov (United States)

    Di, Chong-an; Yu, Gui; Liu, Yunqi; Guo, Yunlong; Sun, Xiangnan; Zheng, Jian; Wen, Yugeng; Wang, Ying; Wu, Weiping; Zhu, Daoben

    2009-09-07

    We report stable organic field-effect transistors (OFETs) based on pentacene. It was found that device stability strongly depends on the dielectric layer. Pentacene thin-film transistors based on the bare or polystyrene-modified SiO(2) gate dielectrics exhibit excellent electrical stabilities. In contrast, the devices with the octadecyltrichlorosilane (OTS)-treated SiO(2) dielectric layer showed the worst stabilities. The effects of the different dielectrics on the device stabilities were investigated. We found that the surface energy of the gate dielectric plays a crucial role in determining the stability of the pentacene thin film, device performance and degradation of electrical properties. Pentacene aggregation, phase transfer and film morphology are also important factors that influence the device stability of pentacene devices. As a result of the surface energy mismatch between the dielectric layer and organic semiconductor, the electronic performance was degraded. Moreover, when pentacene was deposited on the OTS-treated SiO(2) dielectric layer with very low surface energy, pentacene aggregation occurred and resulted in a dramatic decrease of device performance. These results demonstrated that the stable OFETs could be obtained by using pentacene as a semiconductor layer.

  4. An Innovative Flow-Measuring Device: Thermocouple Boundary Layer Rake

    Science.gov (United States)

    Hwang, Danny P.; Fralick, Gustave C.; Martin, Lisa C.; Wrbanek, John D.; Blaha, Charles A.

    2001-01-01

    An innovative flow-measuring device, a thermocouple boundary layer rake, was developed. The sensor detects the flow by using a thin-film thermocouple (TC) array to measure the temperature difference across a heater strip. The heater and TC arrays are microfabricated on a constant-thickness quartz strut with low heat conductivity. The device can measure the velocity profile well into the boundary layer, about 65 gm from the surface, which is almost four times closer to the surface than has been possible with the previously used total pressure tube.

  5. Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

    KAUST Repository

    Labram, John G.

    2015-02-13

    Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2-24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current-voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2-7.

  6. Review of multi-layered magnetoelectric composite materials and devices applications

    Science.gov (United States)

    Chu, Zhaoqiang; PourhosseiniAsl, MohammadJavad; Dong, Shuxiang

    2018-06-01

    Multiferroic materials with the coexistence of at least two ferroic orders, such as ferroelectricity, ferromagnetism, or ferroelasticity, have recently attracted ever-increasing attention due to their potential for multifunctional device applications, including magnetic and current sensors, energy harvesters, magnetoelectric (ME) random access memory and logic devices, tunable microwave devices, and ME antenna. In this article, we provide a review of the recent and ongoing research efforts in the field of multi-layered ME composites. After a brief introduction to ME composites and ME coupling mechanisms, we review recent advances in multi-layered ME composites as well as their device applications based on the direct ME effect, magnetic sensors in particular. Finally, some remaining challenges and future perspective of ME composites and their engineering applications will be discussed.

  7. Enhancement of electroplex emission by using multi-layer device structure

    International Nuclear Information System (INIS)

    Wang Yuanmin; Teng Feng; Xu Zheng; Hou Yanbing; Wang Yongsheng; Xu Xurong

    2005-01-01

    Electroplex emission based on poly(N-vinylcarbazole) (PVK) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) has been improved dramatically by using a multi-layer device structure indium-tin oxide (ITO)/poly(3,4-ethylenedioxythiophene): poly(styrenesulphonic acid) (PEDOT:PSS)/PVK/BCP/PVK/BCP/LiF/Al. Electroplex emission at 595 nm has been improved about 10 times under low voltage and four times under high voltage compared to the double layer device ITO/PVK/BCP/Al. The maximum brightness of the device also has been improved about eight times. Bright white emission via electroplex formation can be obtained with Commission International d'Eclairage (CIE) coordinates (0.336, 0.320) at 26 V with a brightness of 123 cd/m 2 . Based on the analysis of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of the materials, we suggest the enhancement is mainly ascribed to the confinement effect of the quantum-well-like multi-layer device structure. Every hole and electron has more possibilities to cross recombination at the PVK/BCP interface

  8. Enhancement of electroplex emission by using multi-layer device structure

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yuanmin [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China); Teng Feng [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China) and Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China)]. E-mail: advanced9898@126.com; Xu Zheng [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China); Hou Yanbing [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China); Wang Yongsheng [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China); Xu Xurong [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Key Laboratory for Information Storage, Displays and Materials, Beijing 100044 (China)

    2005-04-30

    Electroplex emission based on poly(N-vinylcarbazole) (PVK) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) has been improved dramatically by using a multi-layer device structure indium-tin oxide (ITO)/poly(3,4-ethylenedioxythiophene): poly(styrenesulphonic acid) (PEDOT:PSS)/PVK/BCP/PVK/BCP/LiF/Al. Electroplex emission at 595 nm has been improved about 10 times under low voltage and four times under high voltage compared to the double layer device ITO/PVK/BCP/Al. The maximum brightness of the device also has been improved about eight times. Bright white emission via electroplex formation can be obtained with Commission International d'Eclairage (CIE) coordinates (0.336, 0.320) at 26 V with a brightness of 123 cd/m{sup 2}. Based on the analysis of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of the materials, we suggest the enhancement is mainly ascribed to the confinement effect of the quantum-well-like multi-layer device structure. Every hole and electron has more possibilities to cross recombination at the PVK/BCP interface.

  9. Health physics appraisal guidelines for fusion/confinement devices

    International Nuclear Information System (INIS)

    Neeson, P.M.

    1987-01-01

    Several types of fusion/confinement devices have been developed for a variety of research applications. The health physics considerations for these devices can vary, depending on a number of parameters. This paper presents guidelines for health physics appraisal of such devices, which can be tailored to apply to specific systems. The guidelines can also be useful for establishing ongoing health physics programs for safe operation of the devices

  10. Enhancement of device performance of organic solar cells by an interfacial perylene derivative layer

    KAUST Repository

    Kim, Inho

    2010-05-26

    We report that device performance of organic solar cells consisting of zinc phthalocyanine and fullerene (C60) can be enhanced by insertion of a perylene derivative interfacial layer between fullerene and bathocuproine (BCP) exciton blocking layer (EBL). The morphology of the BCP is influenced by the underlying N,N′-dihexyl-perylene-3,4,9,10-bis(dicarboximide) (PTCDI-C6), which promotes migration of the cathode metal into the BCP layer. Insertion of a PTCDI-C6 layer between fullerene and BCP layers enhances the power conversion efficiency to 2.5%, an improvement of 32% over devices without PTCDI-C6 layer. The enhancement in device performance by insertion of PTCDI-C6 is attributed to a reduction in series resistance due to promoted metal migration into BCP and optimized optical interference effects in multilayered devices. © 2010 American Chemical Society.

  11. Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

    International Nuclear Information System (INIS)

    Zheng Zhi-Wei; Huo Zong-Liang; Zhu Chen-Xin; Xu Zhong-Guang; Liu Jing; Liu Ming

    2011-01-01

    In this paper, we investigate an Al 2 O 3 /HfSiO stack as the blocking layer of a metal—oxide—nitride—oxide—silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al 2 O 3 /HfO 2 stack as the blocking layer, the sample with the Al 2 O 3 /HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al 2 O 3 /HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications. (interdisciplinary physics and related areas of science and technology)

  12. High efficiency rubrene based inverted top-emission organic light emitting devices with a mixed single layer

    International Nuclear Information System (INIS)

    Wang, Zhaokui; Lou, Yanhui; Naka, Shigeki; Okada, Hiroyuki

    2010-01-01

    Inverted top-emission organic light emitting devices (TEOLEDs) with a mixed single layer by mixing of electron transport materials (PyPySPyPy and Alq 3 ), hole transport material (α-NPD) and dope material (rubrene) were investigated. Maximum power efficiency of 3.5 lm/W and maximum luminance of 7000 cd/m 2 were obtained by optimizing the mixing ratio of PyPySPyPy:Alq 3 :α-NPD:rubrene=25:50:25:1. Luminance and power efficiency of mixed single layer device were two times improved compared to bi-layer heterojunction device and tri-layer heterojunction device. Lifetime test also shows that the mixed single layer device exhibits longer operational lifetimes of 343 h, which is three times longer than the 109 h for tri-layer device, and two times longer than the 158 h for bi-layer device. In addition, the maximum luminance and power efficiency were obtained at 20,000 cd/m 2 and 7.5 lm/W, respectively, when a TPD layer of 45 nm was capped onto the top metal electrode.

  13. Hardware device to physical structure binding and authentication

    Science.gov (United States)

    Hamlet, Jason R.; Stein, David J.; Bauer, Todd M.

    2013-08-20

    Detection and deterrence of device tampering and subversion may be achieved by including a cryptographic fingerprint unit within a hardware device for authenticating a binding of the hardware device and a physical structure. The cryptographic fingerprint unit includes an internal physically unclonable function ("PUF") circuit disposed in or on the hardware device, which generate an internal PUF value. Binding logic is coupled to receive the internal PUF value, as well as an external PUF value associated with the physical structure, and generates a binding PUF value, which represents the binding of the hardware device and the physical structure. The cryptographic fingerprint unit also includes a cryptographic unit that uses the binding PUF value to allow a challenger to authenticate the binding.

  14. Point Defects in Two-Dimensional Layered Semiconductors: Physics and Its Applications

    Science.gov (United States)

    Suh, Joonki

    Recent advances in material science and semiconductor processing have been achieved largely based on in-depth understanding, efficient management and advanced application of point defects in host semiconductors, thus finding the relevant techniques such as doping and defect engineering as a traditional scientific and technological solution. Meanwhile, two- dimensional (2D) layered semiconductors currently draw tremendous attentions due to industrial needs and their rich physics at the nanoscale; as we approach the end of critical device dimensions in silicon-based technology, ultra-thin semiconductors have the potential as next- generation channel materials, and new physics also emerges at such reduced dimensions where confinement of electrons, phonons, and other quasi-particles is significant. It is therefore rewarding and interesting to understand and redefine the impact of lattice defects by investigating their interactions with energy/charge carriers of the host matter. Potentially, the established understanding will provide unprecedented opportunities for realizing new functionalities and enhancing the performance of energy harvesting and optoelectronic devices. In this thesis, multiple novel 2D layered semiconductors, such as bismuth and transition- metal chalcogenides, are explored. Following an introduction of conventional effects induced by point defects in semiconductors, the related physics of electronically active amphoteric defects is revisited in greater details. This can elucidate the complication of a two-dimensional electron gas coexisting with the topological states on the surface of bismuth chalcogenides, recently suggested as topological insulators. Therefore, native point defects are still one of the keys to understand and exploit topological insulators. In addition to from a fundamental science point of view, the effects of point defects on the integrated thermal-electrical transport, as well as the entropy-transporting process in

  15. Method for making photovoltaic devices using oxygenated semiconductor thin film layers

    Science.gov (United States)

    Johnson, James Neil; Albin, David Scott; Feldman-Peabody, Scott; Pavol, Mark Jeffrey; Gossman, Robert Dwayne

    2014-12-16

    A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

  16. Effect of inversion layer at iron pyrite surface on photovoltaic device

    Science.gov (United States)

    Uchiyama, Shunsuke; Ishikawa, Yasuaki; Uraoka, Yukiharu

    2018-03-01

    Iron pyrite has great potential as a thin-film solar cell material because it has high optical absorption, low cost, and is earth-abundant. However, previously reported iron pyrite solar cells showed poor photovoltaic characteristics. Here, we have numerically simulated its photovoltaic characteristics and band structures by utilizing a two-dimensional (2D) device simulator, ATLAS, to evaluate the effects of an inversion layer at the surface and a high density of deep donor defect states in the bulk. We found that previous device structures did not consider the inversion layer at the surface region of iron pyrite, which made it difficult to obtain the conversion efficiency. Therefore, we remodeled the device structure and suggested that removing the inversion layer and reducing the density of deep donor defect states would lead to a high conversion efficiency of iron pyrite solar cells.

  17. Modern devices the simple physics of sophisticated technology

    CERN Document Server

    Joseph, Charles L

    2016-01-01

    This book discusses the principles of physics through applications of state-of-the-art technologies and advanced instruments. The authors use diagrams, sketches, and graphs coupled with equations and mathematical analysis to enhance the reader's understanding of modern devices. Readers will learn to identify common underlying physical principles that govern several types of devices, while gaining an understanding of the performance trade-off imposed by the physical limitations of various processing methods. The topics discussed in the book assume readers have taken an introductory physics course, college algebra, and have a basic understanding of calculus. * Describes the basic physics behind a large number of devices encountered in everyday life, from the air conditioner to Blu-ray discs * Covers state-of-the-art devices such as spectrographs, photoelectric image sensors, spacecraft systems, astronomical and planetary observatories, biomedical imaging instruments, particle accelerators, and jet engines * Inc...

  18. Physical characteristics comparison of virtual wedge device with physical wedge

    International Nuclear Information System (INIS)

    Cho, Jung Keun; Choi, Kye Sook; Lim, Cheong Hwan; Kim, Jeong Koo; Jung, Hong Ryang; Lee, Jung Ok; Lee, Man Goo

    2001-01-01

    We compared the characteristics of Siemens virtual wedge device with physical wedges for clinical application. We investigated the characteristics of virtual and physical wedges for various wedge angles (15, 30, 45, and 60) using 6- and 15- MV photon beams. Wedge factors were measured in water using an ion chamber for various field sizes and depths. In case of virtual wedge device, as upper jaw moves during irradiation, wedge angles were estimated by accumulated doses. These measurements were performed at off-axis points perpendicular to the beam central axis in water for a 15 cm x 20 cm radiation field size at the depth of 10 cm. Surface does without and with virtual or physical wedges were measured using a parallel plate ion chamber at surface. Field size was 15 cm * 20 cm and a polystyrene phantom was used. For various field sizes, virtual and physical wedge factors were changed by maximum 2.1% and 3.9%, respectively. For various depths, virtual and physical wedge factors were changed by maximum 1.9% and 2.9%, respectively. No major difference was found between the virtual and physical wedge angles and the difference was within 0.5. Surface dose with physical wedge was reduced by maximum 20% (x-ray beam : 6 MV, wedge angle : 45, SSD : 80 cm) relative to one with virtual wedge or without wedge. Comparison of the characteristics of Siemens virtual wedge device with physical wedges was performed. Depth dependence of virtual wedge factor was smaller than that of physical wedge factor. Virtual and physical wedge factors were nearly independent of field sizes. The accuracy of virtual and physical wedge angles was excellent. Surface dose was found to be reduced using a physical wedge

  19. Physical characteristics comparison of virtual wedge device with physical wedge

    International Nuclear Information System (INIS)

    Choi, Dong Rak; Shin, Kyung Hwan; Lee, Kyu Chan; Kim, Dae Yong; Ahn, Yong Chan; Lim, Do Hoon; Kim, Moon Kyung; Huh, Seung Jae

    1999-01-01

    We have compared the characteristics of Siemens virtual wedge device with physical wedges for clinical application. We investigated the characteristics of virtual and physical wedges for various wedge angles (15, 30, 45, and 60 ) using 6- and 15MV photon beams. Wedge factors were measured in water using an ion chamber for various field sizes and depths. In case of virtual wedge device, as upper jaw moves during irradiation, wedge angles were estimated by accumulated doses. These measurements were performed at off-axis points perpendicular to the beam central axis in water for a 15 cm x 20 cm radiation field size at the depth of 10 cm. Surface doses without and with virtual or physical wedges were measured using a parallel plate ion chamber at surface. Field size was 15 cm x 20 cm and a polystyrene phantom was used. For various field sizes, virtual and physical wedge factors were changed by maximum 2.1% and 3.9%, respectively. For various depths, virtual and physical wedge factors were changed by maximum 1.9% and 2.9%, respectively. No major difference was found between the virtual and physical wedge angles and the difference was within 0.5 .deg. . Surface dose with physical wedge was reduced by maximum 20% (x-ray beam: 6 MV, wedge angle: 45 .deg. , SSD: 80cm) relative to one with virtual wedge or without wedge. Comparison of the characteristics of Siemens virtual wedge device with physical wedges was performed. Depth dependence of virtual wedge factor was smaller than that of physical wedge factor. Virtual and physical wedge factors were nearly independent of field sizes. The accuracy of virtual and physical wedge angles was excellent. Surface dose was found to be reduced using physical wedge

  20. Physically Unclonable Cryptographic Primitives by Chemical Vapor Deposition of Layered MoS2.

    Science.gov (United States)

    Alharbi, Abdullah; Armstrong, Darren; Alharbi, Somayah; Shahrjerdi, Davood

    2017-12-26

    Physically unclonable cryptographic primitives are promising for securing the rapidly growing number of electronic devices. Here, we introduce physically unclonable primitives from layered molybdenum disulfide (MoS 2 ) by leveraging the natural randomness of their island growth during chemical vapor deposition (CVD). We synthesize a MoS 2 monolayer film covered with speckles of multilayer islands, where the growth process is engineered for an optimal speckle density. Using the Clark-Evans test, we confirm that the distribution of islands on the film exhibits complete spatial randomness, hence indicating the growth of multilayer speckles is a spatial Poisson process. Such a property is highly desirable for constructing unpredictable cryptographic primitives. The security primitive is an array of 2048 pixels fabricated from this film. The complex structure of the pixels makes the physical duplication of the array impossible (i.e., physically unclonable). A unique optical response is generated by applying an optical stimulus to the structure. The basis for this unique response is the dependence of the photoemission on the number of MoS 2 layers, which by design is random throughout the film. Using a threshold value for the photoemission, we convert the optical response into binary cryptographic keys. We show that the proper selection of this threshold is crucial for maximizing combination randomness and that the optimal value of the threshold is linked directly to the growth process. This study reveals an opportunity for generating robust and versatile security primitives from layered transition metal dichalcogenides.

  1. Multilayered gold/silica nanoparticulate bilayer devices using layer-by-layer self organisation for flexible bending and pressure sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Shah Alam, Md. [Department of Electrical and Electronic Engineering, Rajshahi University of Engineering and Technology, Rajshahi 6204 (Bangladesh); Center of Excellence in Nanotechnology, Asian Institute of Technology, 12120 Pathumthani (Thailand); Mohammed, Waleed S., E-mail: waleed.m@bu.ac.th [Center of Research in Optoelectronics, Communication and Control System (BU-CROCCS), School of Engineering, Bangkok University, Pathumthani 12120 (Thailand); Dutta, Joydeep, E-mail: dutta@squ.edu.om [Center of Excellence in Nanotechnology, Asian Institute of Technology, 12120 Pathumthani (Thailand); Chair in Nanotechnology, Water Research Center, Sultan Qaboos University, P.O. Box 33, Al Khoud 123 (Oman)

    2014-02-17

    A pressure and bending sensor was fabricated using multilayer thin films fabricated on a flexible substrate based on layer-by-layer self-organization of 18 nm gold nanoparticles separated by a dielectric layer of 30 nm silica nanoparticles. 50, 75, and 100 gold-silica bi-layered films were deposited and the device characteristics were studied. A threshold voltage was required for electron conduction which increases from 2.4 V for 50 bi-layers to 3.3 V for 100 bi-layers. Upon bending of the device up to about 52°, the threshold voltage and slope of the I-V curves change linearly. Electrical characterization of the multilayer films was carried out under ambient conditions with different pressures and bending angles in the direct current mode. This study demonstrates that the developed multilayer thin films can be used as pressure as well as bending sensing applications.

  2. FUNDAMENTALS OF STRUCTURAL TYPOLOGY DEVICE DESIGN WITH A GAS BEARING LAYER

    Directory of Open Access Journals (Sweden)

    I. A. Аvtsinоv

    2015-01-01

    Full Text Available We describe the typical stages of a structural typology of devices allowing them to design quality in the automatic mode on the known parameters of products (parts and the required processing operations with them. In the first stage classification it was organized as a piece of specific products and devices for the manipulation of the latter. Specifics items described their physical – mechanical properties, geometry and their application. The most frequently described specific products are used in pharmaceutical, perfume, food, microelectronics, electrical engineering, electronics. The main elements of the proposed device is a carrier working surface over which a thin layer of gas is created. Depending on the position (horizontal or vertical of the form of its movement (rotation, rotational – translational or is stationary, and the configuration of the carrier operating the surface implement various manufacturing operations (targeting, positioning, shaping, classification, transport, heat treatment, weight control, assembly, culling, and others. The second stage was to mathematically describe the relationship of the specificity of piece goods, with design features of devices supporting the work surface and sold them operations. For this purpose, the device has been used in discrete mathematics, with which you can produce a description of all types of devices, and then make a conclusion such as the work surface meets the specified requirements. The apparent advantage of using predicate logic to this problem is fairly simple implementation of the algorithm of structural typology, which can be expressed using a declarative programming language. In the third phase, work is underway to create the necessary algorithmic language program "Prolog" and presented the structure of the imperative and declarative implementation of the algorithm.

  3. ON ASSESSMNENT OF PHYSICAL WEAR IN ELEMENTS OF TECHNICAL DEVICES

    Directory of Open Access Journals (Sweden)

    S. N. Osipov

    2015-01-01

    Full Text Available Real assessment of wear in technical devices, construction structures, minings, their elements and connections is of great importance for provision of operational security and efficiency. Natural properties of the overwhelming majority of materials follow to probabilistic (stochastic laws due to various reasons (external influence, processing technologies and others. An assessment of physical wear rate of buildings and structures and their elements is carried out in the former republics of the USSR mainly in accordance with external physical signs (deflections, cracks, layer separations, etc. but wear percentage is often calculated on the basis of replacement cost in comparison with the initial one even without taking into account inflation which did not officially exist in the USSR. In this case destruction or failure of structure or their elements are considered as 100 % wear.The paper proposes a new methodology for assessment of physical wear rate in accordance with probability ratio of nofailure operation (reliability, minimum ratio is assigned to admissible limit value in conformity with technical requirements for the technical devices, construction structures, minings in question, their elements and connections. In this context minimum permissible wear probability (reliability is taken as 100 % wear rate and its initial index is considered as 0 % wear rate. That is why wear intensity in time depends on type of value probability distribution while determining the rate of physical property. The proposed methodology is intended for probabilistic wear assessment in case of relatively simple changes in strength properties of materials (for example, within the elastic limit.

  4. Experiments on the flow field physics of confluent boundary layers for high-lift systems

    Science.gov (United States)

    Nelson, Robert C.; Thomas, F. O.; Chu, H. C.

    1994-01-01

    The use of sub-scale wind tunnel test data to predict the behavior of commercial transport high lift systems at in-flight Reynolds number is limited by the so-called 'inverse Reynolds number effect'. This involves an actual deterioration in the performance of a high lift device with increasing Reynolds number. A lack of understanding of the relevant flow field physics associated with numerous complicated viscous flow interactions that characterize flow over high-lift devices prohibits computational fluid dynamics from addressing Reynolds number effects. Clearly there is a need for research that has as its objective the clarification of the fundamental flow field physics associated with viscous effects in high lift systems. In this investigation, a detailed experimental investigation is being performed to study the interaction between the slat wake and the boundary layer on the primary airfoil which is known as a confluent boundary layer. This little-studied aspect of the multi-element airfoil problem deserves special attention due to its importance in the lift augmentation process. The goal of this research is is to provide an improved understanding of the flow physics associated with high lift generation. This process report will discuss the status of the research being conducted at the Hessert Center for Aerospace Research at the University of Notre Dame. The research is sponsored by NASA Ames Research Center under NASA grant NAG2-905. The report will include a discussion of the models that have been built or that are under construction, a description of the planned experiments, a description of a flow visualization apparatus that has been developed for generating colored smoke for confluent boundary layer studies and some preliminary measurements made using our new 3-component fiber optic LDV system.

  5. Highly efficient white organic light-emitting devices consisting of undoped ultrathin yellow phosphorescent layer

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Shengqiang [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Ma, Zhu; Zhao, Juan [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2013-02-15

    High-efficiency white organic light-emitting devices (WOLEDs) based on an undoped ultrathin yellow light-emitting layer and a doped blue light-emitting layer were demonstrated. While the thickness of blue light-emitting layer, formed by doping a charge-trapping phosphor, iridium(III) bis(4 Prime ,6 Prime -difluorophenylpyridinato)tetrakis(1-pyrazolyl)borate (FIr6) in a wide bandgap host, was kept constant, the thickness of neat yellow emissive layer of novel phosphorescent material, bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2 Prime }]iridium (acetylacetonate) [(t-bt){sub 2}Ir(acac)] was varied to optimize the device performance. The optimized device exhibited maximum luminance, current efficiency and power efficiency of 24,000 cd/m{sup 2} (at 15.2 V), 79.0 cd/A (at 1550 cd/m{sup 2}) and 40.5 lm/W (at 1000 cd/m{sup 2}), respectively. Besides, the white-light emission covered a wide range of visible spectrum, and the Commission Internationale de l'Eclairage coordinates were (0.32, 0.38) with a color temperature of 5800 K at 8 V. Moreover, high external quantum efficiency was also obtained in the high-efficiency WOLEDs. The performance enhancement was attributed to the proper thickness of (t-bt){sub 2}Ir(acac) layer that enabled adequate current density and enough phosphorescent dye to trap electrons. - Highlights: Black-Right-Pointing-Pointer Highly efficient WOLEDs based on two complementary layers were fabricated. Black-Right-Pointing-Pointer The yellow emissive layer was formed by utilizing undoping system. Black-Right-Pointing-Pointer The blue emissive layer was made by host-guest doping system. Black-Right-Pointing-Pointer The thickness of the yellow emissive layer was varied to make device optimization. Black-Right-Pointing-Pointer The optimized device achieved high power efficiency of 40.5 lm/W.

  6. Physical layer network coding

    DEFF Research Database (Denmark)

    Fukui, Hironori; Popovski, Petar; Yomo, Hiroyuki

    2014-01-01

    Physical layer network coding (PLNC) has been proposed to improve throughput of the two-way relay channel, where two nodes communicate with each other, being assisted by a relay node. Most of the works related to PLNC are focused on a simple three-node model and they do not take into account...

  7. SF-FDTD analysis of a predictive physical model for parallel aligned liquid crystal devices

    Science.gov (United States)

    Márquez, Andrés.; Francés, Jorge; Martínez, Francisco J.; Gallego, Sergi; Alvarez, Mariela L.; Calzado, Eva M.; Pascual, Inmaculada; Beléndez, Augusto

    2017-08-01

    Recently we demonstrated a novel and simplified model enabling to calculate the voltage dependent retardance provided by parallel aligned liquid crystal devices (PA-LCoS) for a very wide range of incidence angles and any wavelength in the visible. To our knowledge it represents the most simplified approach still showing predictive capability. Deeper insight into the physics behind the simplified model is necessary to understand if the parameters in the model are physically meaningful. Since the PA-LCoS is a black-box where we do not have information about the physical parameters of the device, we cannot perform this kind of analysis using the experimental retardance measurements. In this work we develop realistic simulations for the non-linear tilt of the liquid crystal director across the thickness of the liquid crystal layer in the PA devices. We consider these profiles to have a sine-like shape, which is a good approximation for typical ranges of applied voltage in commercial PA-LCoS microdisplays. For these simulations we develop a rigorous method based on the split-field finite difference time domain (SF-FDTD) technique which provides realistic retardance values. These values are used as the experimental measurements to which the simplified model is fitted. From this analysis we learn that the simplified model is very robust, providing unambiguous solutions when fitting its parameters. We also learn that two of the parameters in the model are physically meaningful, proving a useful reverse-engineering approach, with predictive capability, to probe into internal characteristics of the PA-LCoS device.

  8. Physical layer approaches for securing wireless communication systems

    CERN Document Server

    Wen, Hong

    2013-01-01

    This book surveys the outstanding work of physical-layer (PHY) security, including  the recent achievements of confidentiality and authentication for wireless communication systems by channel identification. A practical approach to building unconditional confidentiality for Wireless Communication security by feedback and error correcting code is introduced and a framework of PHY security based on space time block code (STBC) MIMO system is demonstrated.  Also discussed is a scheme which combines cryptographic techniques implemented in the higher layer with the physical layer security approach

  9. Securing wireless communications at the physical layer

    CERN Document Server

    Liu, Ruoheng

    2009-01-01

    Throughout this book there is an underlying theme that the rich multipath environment that is typical of wireless scenarios supports the establishment of new security services at the physical layer, including new mechanisms that establish cryptographic keys, that support communication with assured confidentiality, and that can authenticate transmitters in mobile environments. The book takes a holistic approach to covering topics related to physical layer security solutions, with contributions ranging from the theoretical underpinnings behind secure communications to practical systems validatio

  10. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

    2017-01-01

    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...... or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We...... with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers....

  11. Electron-transporting layer doped with cesium azide for high-performance phosphorescent and tandem white organic light-emitting devices

    Science.gov (United States)

    Yu, Yaoyao; Chen, Xingming; Jin, Yu; Wu, Zhijun; Yu, Ye; Lin, Wenyan; Yang, Huishan

    2017-07-01

    Cesium azide was employed as an effective n-dopant in the electron-transporting layer (ETL) of organic light-emitting devices (OLEDs) owing to its low deposition temperature and high ambient stability. By doping cesium azide onto 4,7-diphenyl-1,10-phenanthroline, a green phosphorescent OLED having best efficiencies of 66.25 cd A-1, 81.22 lm W-1 and 18.82% was realized. Moreover, the efficiency roll-off from 1000 cd m-2 to 10 000 cd m-2 is only 12.9%, which is comparable with or even lower than that of devices utilizing the co-host system. Physical mechanisms for the improvement of device performance were studied in depth by analyzing the current density-voltage (J-V) characteristics of the electron-only devices. In particular, by comparing the J-V characteristics of the electron-only devices instead of applying the complicated ultraviolet photoelectron spectrometer measurements, we deduced the decrease in barrier height for electron injection at the ETL/cathode contact. Finally, an efficient tandem white OLED utilizing the n-doped layer in the charge generation unit (CGU) was constructed. As far as we know, this is the first report on the application of this CGU for fabricating tandem white OLEDs. The emissions of the tandem device are all in the warm white region from 1213 cd m-2 to 10870 cd m-2, as is beneficial to the lighting application.

  12. Electron-transporting layer doped with cesium azide for high-performance phosphorescent and tandem white organic light-emitting devices

    International Nuclear Information System (INIS)

    Yu, Yaoyao; Chen, Xingming; Jin, Yu; Wu, Zhijun; Yu, Ye; Lin, Wenyan; Yang, Huishan

    2017-01-01

    Cesium azide was employed as an effective n-dopant in the electron-transporting layer (ETL) of organic light-emitting devices (OLEDs) owing to its low deposition temperature and high ambient stability. By doping cesium azide onto 4,7-diphenyl-1,10-phenanthroline, a green phosphorescent OLED having best efficiencies of 66.25 cd A −1 , 81.22 lm W −1 and 18.82% was realized. Moreover, the efficiency roll-off from 1000 cd m −2 to 10 000 cd m −2 is only 12.9%, which is comparable with or even lower than that of devices utilizing the co-host system. Physical mechanisms for the improvement of device performance were studied in depth by analyzing the current density–voltage ( J – V ) characteristics of the electron-only devices. In particular, by comparing the J – V characteristics of the electron-only devices instead of applying the complicated ultraviolet photoelectron spectrometer measurements, we deduced the decrease in barrier height for electron injection at the ETL/cathode contact. Finally, an efficient tandem white OLED utilizing the n-doped layer in the charge generation unit (CGU) was constructed. As far as we know, this is the first report on the application of this CGU for fabricating tandem white OLEDs. The emissions of the tandem device are all in the warm white region from 1213 cd m −2 to 10870 cd m −2 , as is beneficial to the lighting application. (paper)

  13. Increasing physical activity with mobile devices: a meta-analysis.

    Science.gov (United States)

    Fanning, Jason; Mullen, Sean P; McAuley, Edward

    2012-11-21

    Regular physical activity has established physical and mental health benefits; however, merely one quarter of the U.S. adult population meets national physical activity recommendations. In an effort to engage individuals who do not meet these guidelines, researchers have utilized popular emerging technologies, including mobile devices (ie, personal digital assistants [PDAs], mobile phones). This study is the first to synthesize current research focused on the use of mobile devices for increasing physical activity. To conduct a meta-analysis of research utilizing mobile devices to influence physical activity behavior. The aims of this review were to: (1) examine the efficacy of mobile devices in the physical activity setting, (2) explore and discuss implementation of device features across studies, and (3) make recommendations for future intervention development. We searched electronic databases (PubMed, PsychINFO, SCOPUS) and identified publications through reference lists and requests to experts in the field of mobile health. Studies were included that provided original data and aimed to influence physical activity through dissemination or collection of intervention materials with a mobile device. Data were extracted to calculate effect sizes for individual studies, as were study descriptives. A random effects meta-analysis was conducted using the Comprehensive Meta-Analysis software suite. Study quality was assessed using the quality of execution portion of the Guide to Community Preventative Services data extraction form. Four studies were of "good" quality and seven of "fair" quality. In total, 1351 individuals participated in 11 unique studies from which 18 effects were extracted and synthesized, yielding an overall weight mean effect size of g = 0.54 (95% CI = 0.17 to 0.91, P = .01). Research utilizing mobile devices is gaining in popularity, and this study suggests that this platform is an effective means for influencing physical activity behavior. Our focus

  14. Physics and applications of electrochromic devices

    Science.gov (United States)

    Pawlicka, Agnieszka; Avellaneda, Cesar O.

    2003-07-01

    Solid state electrochromic devices (ECD) are of considerable technological and commercial interest because of their controllable transmission, absorption and/or reflectance. For instance, a major application of these devices is in smart windows that can regulate the solar gains of buildings and also in glare attenuation in automobile rear view mirrors. Other applications include solar cells, small and large area flat panel displays, satellite temperature control, food monitoring, and document authentication. A typical electrochromic device has a five-layer structure: GS/TC/EC/IC/IS/TC/GS, where GS is a glass substrate, TC is a transparent conductor, generally ITO (indium tin oxide) or FTO (fluorine tin oxide), EC is an electrochromic coating, IC is an ion conductor (solid or liquid electrolyte) and IS is an ion storage coating. Generally, the EC and IS layers are deposited separately on the TC coatings and then jointed with the IC and sealed. The EC and IS are thin films that can be deposited by sputtering, CVD, sol-gel precursors, etc. There are different kinds of organic, inorganic and organic-inorganic films that can be used to make electrochromic devices. Thin electrochromic films can be: WO3, Nb2O5, Nb2O5:Li+ or Nb2O5-TiO2 coatings, ions storage films: CeO2-TiO2, CeO2-ZrO2 or CeO2-TiO2-ZrO2 and electrolytes like Organically Modified Electrolytes (Ormolytes) or polymeric films also based on natural polymers like starch or cellulose. These last are very interesting due to their high ionic conductivity, high transparency and good mechanical properties. This paper describes construction and properties of different thin oxide and polymeric films and also shows the optical response of an all sol-gel electrochromic device with WO3/Ormolyte/CeO2-TiO2 configuration.

  15. Enhancement of efficiencies for tandem green phosphorescent organic light-emitting devices with a p-type charge generation layer

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Byung Soo; Jeon, Young Pyo; Lee, Dae Uk; Kim, Tae Whan, E-mail: twk@hanayng.ac.kr

    2014-10-15

    The operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the organic light-emitting device with a molybdenum trioxide layer. The maximum brightness of the tandem green phosphorescent organic light-emitting device at 21.9 V was 26,540 cd/m{sup 2}. The dominant peak of the electroluminescence spectra for the devices was related to the fac-tris(2-phenylpyridine) iridium emission. - Highlights: • Tandem OLEDs with CGL were fabricated to enhance their efficiency. • The operating voltage of the tandem OLED with a HAT-CN layer was improved by 3%. • The efficiency and brightness of the tandem OLED were 13.9 cd/A and 26,540 cd/m{sup 2}. • Efficiency of the OLED with a HAT-CN layer was lower than that with a MoO{sub 3} layer. - Abstract: Tandem green phosphorescent organic light-emitting devices with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile or a molybdenum trioxide charge generation layer were fabricated to enhance their efficiency. Current density–voltage curves showed that the operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the corresponding organic light-emitting device with a molybdenum trioxide layer. The efficiency and the brightness of the tandem green phosphorescent organic light-emitting device were 13.9 cd/A and 26,540 cd/m{sup 2}, respectively. The current efficiency of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was lower by 1.1 times compared to that of the corresponding organic light-emitting device with molybdenum trioxide layer due to the decreased charge generation and transport in the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer resulting from triplet–triplet exciton annihilation.

  16. Hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer

    International Nuclear Information System (INIS)

    Kim, Taehee; Choi, Jin Young; Jeon, Jun Hong; Kim, Youn-Su; Kim, Bong-Soo; Lee, Doh-Kwon; Kim, Honggon; Han, Seunghee; Kim, Kyungkon

    2012-01-01

    Highlights: ► This work enhanced power conversion efficiency of the hybrid tandem solar cell from 1.0% to 2.6%. ► The interfacial series resistance of the tandem solar cell was eliminated by inserting ITO layer. ► This work shows the feasibility of the highly efficient hybrid tandem solar cells. -- Abstract: We demonstrate hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer. The series-connected hybrid tandem photovoltaic devices were developed by combining hydrogenated amorphous silicon (a-Si:H) and polymer-based organic photovoltaics (OPVs). In order to enhance the interfacial connection between the subcells, we employed highly transparent and conductive indium tin oxide (ITO) thin layer. By using the ITO interconnecting layer, the power conversion efficiency of the hybrid tandem solar cell was enhanced from 1.0% (V OC = 1.041 V, J SC = 2.97 mA/cm 2 , FF = 32.3%) to 2.6% (V OC = 1.336 V, J SC = 4.65 mA/cm 2 , FF = 41.98%) due to the eliminated interfacial series resistance.

  17. Science and Emerging Technology of 2D Atomic Layered Materials and Devices

    Science.gov (United States)

    2017-09-09

    AFRL-AFOSR-JP-TR-2017-0067 Science & Emerging Technology of 2D Atomic Layered Materials and Devices Angel Rubio UNIVERSIDAD DEL PAIS VASCO - EUSKAL...DD-MM-YYYY)      27-09-2017 2.  REPORT TYPE      Final 3.  DATES COVERED (From - To)      19 Feb 2015 to 18 Feb 2017 4.  TITLE AND SUBTITLE Science ...reporting documents for AOARD project 144088, “2D Materials and Devices Beyond Graphene Science & Emerging Technology of 2D Atomic Layered Materials and

  18. Local electric field screening in bi-layer graphene devices

    Directory of Open Access Journals (Sweden)

    Vishal ePanchal

    2014-02-01

    Full Text Available We present experimental studies of both local and macroscopic electrical effects in uniform single- (1LG and bi-layer graphene (2LG devices as well as in devices with non-uniform graphene coverage, under ambient conditions. DC transport measurements on sub-micron scale Hall bar devices were used to show a linear rise in carrier density with increasing amounts of 2LG coverage. Electrical scanning gate microscopy was used to locally top gate uniform and non-uniform devices in order to observe the effect of local electrical gating. We experimentally show a significant level of electric field screening by 2LG. We demonstrate that SGM technique is an extremely useful research tool for studies of local screening effects, which provides a complementary view on phenomena that are usually considered only within a macroscopic experimental scheme.

  19. Homoepitaxial VPE growth of SiC active layers

    Energy Technology Data Exchange (ETDEWEB)

    Burk, A.A. Jr. [Northrop Grumman Electron. Sensors and Syst. Div., Baltimore, MD (United States); Rowland, L.B. [Northrop Grumman Sci. and Technol. Center, Pittsburgh, PA (United States)

    1997-07-01

    SiC active layers of tailored thickness and doping form the heart of all SiC electronic devices. These layers are most conveniently formed by vapor phase epitaxy (VPE). Exacting requirements are placed upon the SiC-VPE layers` material properties by both semiconductor device physics and available methods of device processing. In this paper, the current ability of the SiC-VPE process to meet these requirements is described along with continuing improvements in SiC epitaxial reactors, processes and materials. (orig.) 48 refs.

  20. Tungsten oxides as interfacial layers for improved performance in hybrid optoelectronic devices

    International Nuclear Information System (INIS)

    Vasilopoulou, M.; Palilis, L.C.; Georgiadou, D.G.; Argitis, P.; Kennou, S.; Kostis, I.; Papadimitropoulos, G.; Stathopoulos, N.A.; Iliadis, A.A.; Konofaos, N.; Davazoglou, D.; Sygellou, L.

    2011-01-01

    Tungsten oxide (WO 3 ) films with thicknesses ranging from 30 to 100 nm were grown by Hot Filament Vapor Deposition (HFVD). Films were studied by X-Ray Photoemission Spectroscopy (XPS) and were found to be stoichiometric. The surface morphology of the films was characterized by Atomic Force Microscopy (AFM). Samples had a granular form with grains in the order of 100 nm. The surface roughness was found to increase with film thickness. HFVD WO 3 films were used as conducting interfacial layers in advanced hybrid organic-inorganic optoelectronic devices. Hybrid-Organic Light Emitting Diodes (Hy-OLEDs) and Organic Photovoltaics (Hy-OPVs) were fabricated with these films as anode and/or as cathode interfacial conducting layers. The Hy-OLEDs showed significantly higher current density and a lower turn-on voltage when a thin WO 3 layer was inserted at the anode/polymer interface, while when inserted at the cathode/polymer interface the device performance was found to deteriorate. The improvement was attributed to a more efficient hole injection and transport from the Fermi level of the anode to the Highest Occupied Molecular Orbital (HOMO) of a yellow emitting copolymer (YEP). On the other hand, the insertion of a thin WO 3 layer at the cathode/polymer interface of Hy-OPV devices based on a polythiophene-fullerene bulk-heterojunction blend photoactive layer resulted in an increase of the produced photogenerated current, more likely due to improved electron extraction at the Al cathode.

  1. Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

    International Nuclear Information System (INIS)

    Schulze, J.; Oehme, M.; Werner, J.

    2012-01-01

    A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that – depending on the chosen operating point and device design – the diode serves as a broadband high speed photo detector, Franz–Keldysh effect modulator or light emitting diode.

  2. Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

    Energy Technology Data Exchange (ETDEWEB)

    Schulze, J., E-mail: schulze@iht.uni-stuttgart.de; Oehme, M.; Werner, J.

    2012-02-01

    A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that - depending on the chosen operating point and device design - the diode serves as a broadband high speed photo detector, Franz-Keldysh effect modulator or light emitting diode.

  3. Wireless physical layer security

    Science.gov (United States)

    Poor, H. Vincent; Schaefer, Rafael F.

    2017-01-01

    Security in wireless networks has traditionally been considered to be an issue to be addressed separately from the physical radio transmission aspects of wireless systems. However, with the emergence of new networking architectures that are not amenable to traditional methods of secure communication such as data encryption, there has been an increase in interest in the potential of the physical properties of the radio channel itself to provide communications security. Information theory provides a natural framework for the study of this issue, and there has been considerable recent research devoted to using this framework to develop a greater understanding of the fundamental ability of the so-called physical layer to provide security in wireless networks. Moreover, this approach is also suggestive in many cases of coding techniques that can approach fundamental limits in practice and of techniques for other security tasks such as authentication. This paper provides an overview of these developments.

  4. Atomtronics: Material and Device Physics of Quantum Gases

    Science.gov (United States)

    matter physics to electrical engineering. Our projects title Atomtronics: Material and device physics of quantum gases illustrates the chasm we bridged...starting from therich and fundamental physics already revealed with cold atoms systems, then leading to an understanding of the functional materials

  5. Use of Physics Innovative Device for Improving Students‟ Motivation and Performance in Learning Selected Concepts in Physics

    Directory of Open Access Journals (Sweden)

    Virginia Songalia Sobremisana

    2017-11-01

    Full Text Available This research was focused on the development and evaluation of physics innovative device in enhancing students’ motivation and performance in learning selected concepts in physics. The Physics innovative device was developed based upon research on student difficulties in learning relevant concepts in physics and their attitudes toward the subject. Basic concepts in mechanics were also made as baselines in the development of the locally-produced Physics innovative learning device. Such learning devices are valuable resources when used either in lecture or demonstration classes. The developmental, descriptive and quasi-experimental research methods were utilized to determine the effectiveness, in terms of motivation and performance, of the innovative device in Physics. The instruments used for the data collection were the Instructional Materials Motivational Scale (IMMS developed by Keller and the students’ performance test. Pretest and posttest mean scores were measured to determine if there is a mean gain score difference between the experimental and control groups. The study revealed that the group taught with the Physics innovative device performed significantly better than those taught in the traditional method and also the use of Physics innovative device generally improved students’ understanding of concepts and led to higher academic achievements. Analysis of the students’ level of motivation showed that their interests were captured, the instructions they received were relevant to their personal goals and motives, their confidence to learn on their own were build-up, and learning for them was rewarding and important. In the four dimensions (ARCS of IMMS students were found to be attentive, confident, and in agreement in using the fun-learning tool having realize its applicability and relevance in learning their Physics lessons. Results of the study disclosed students and teachers consider the novel device acceptable because it is

  6. Carbazole/triarylamine based polymers as a hole injection/transport layer in organic light emitting devices.

    Science.gov (United States)

    Wang, Hui; Ryu, Jeong-Tak; Kwon, Younghwan

    2012-05-01

    This study examined the influence of the charge injection barriers on the performance of organic light emitting diodes (OLEDs) using polymers with a stepwise tuned ionization potential (I(p) approximately -5.01 - -5.29 eV) between the indium tin oxide (ITO) (phi approximately -4.8 eV) anode and tris(8-hydroxyquinolinato) aluminium (Alq3) (I(p) approximately -5.7 eV) layer. The energy levels of the polymers were tuned by structural modification. Double layer devices were fabricated with a configuration of ITO/polymer/Alq3/LiF/Al, where the polymers, Alq3, and LiF/Al were used as the hole injection/transport layer, emissive electron transport layer, and electron injection/cathode, respectively. Using the current density-voltage (J-V), luminescence-voltage (L-V) and efficiencies in these double layer devices, the device performance was evaluated in terms of the energy level alignments at the interfaces, such as the hole injection barriers (phi(h)(iTO/polymer) and phi(h)(polymer/Alq3)) from ITO through the polymers into the Alq3 layer, and the electron injection barrier (phi(e)(polymer/Alq3) or electron/exciton blocking barrier) at the polymer/Alq3 interface.

  7. Improved organic light-emitting device with tris-(8-hydroxyquinoline) aluminium inserted between hole-injection layer and hole-transporting layer

    Energy Technology Data Exchange (ETDEWEB)

    Divayana, Y [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore (Singapore); Sun, X W [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore (Singapore); Chen, B J [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore (Singapore); Sarma, K R [Aerospace Electronic Systems, Honeywell, 21111 N 19th Avenue, Phoenix, AZ 85027 (United States)

    2007-01-07

    A layer of tris-(8-hydroxyquinoline) aluminium (Alq{sub 3}), which is normally used as an electron-transporting and emissive layer, was incorporated between the hole-transporting layer and the hole-injection layer to balance the electron-hole injection. The Alq{sub 3} layer performed to block the hole current which is a majority carrier in a typical organic light-emitting device. An increase in current efficiency by almost 30%, from 3.1 to 4.0 cd A{sup -1}, with a minimum voltage shift was achieved with a 2 nm Alq{sub 3} layer as a hole-blocking layer. A reduction in HTL thickness was observed to reduce the efficiency due to electron leakage to the HIL, whereby an inefficient exciplex emission was observed.

  8. Charge generation layers for solution processed tandem organic light emitting diodes with regular device architecture.

    Science.gov (United States)

    Höfle, Stefan; Bernhard, Christoph; Bruns, Michael; Kübel, Christian; Scherer, Torsten; Lemmer, Uli; Colsmann, Alexander

    2015-04-22

    Tandem organic light emitting diodes (OLEDs) utilizing fluorescent polymers in both sub-OLEDs and a regular device architecture were fabricated from solution, and their structure and performance characterized. The charge carrier generation layer comprised a zinc oxide layer, modified by a polyethylenimine interface dipole, for electron injection and either MoO3, WO3, or VOx for hole injection into the adjacent sub-OLEDs. ToF-SIMS investigations and STEM-EDX mapping verified the distinct functional layers throughout the layer stack. At a given device current density, the current efficiencies of both sub-OLEDs add up to a maximum of 25 cd/A, indicating a properly working tandem OLED.

  9. White organic light emitting devices with hybrid emissive layers combining phosphorescence and fluorescence

    Energy Technology Data Exchange (ETDEWEB)

    Lei Gangtie; Chen Xiaolan; Wang Lei; Zhu Meixiang; Zhu Weiguo [Key Lab of Environmental-friendly Chemistry and Application of Ministry of Education, College of Chemistry, Xiangtan University, Xiangtan 411105 (China); Wang Liduo; Qiu Yong [Key Lab of Organic-Optoelectronics and Molecular Sciences of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084 (China)], E-mail: lgt@xtu.edu.cn

    2008-05-21

    We fabricated a white organic light-emitting diode (WOLED) by hybrid emissive layers which combined phosphorescence with fluorescence. In this device, the thin layer of 4-(dicyanomethylene)-2-(t-butyl)-6-(1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran played the role of undoped red emissive layer which was inserted between two blue phosphorescence emissive layers. The blue phosphorescent dye was bis[(4, 6-difluorophenyl)-pyridinato-N, C{sup 2}] (picolinato) Ir(III), which was doped in the host material, N, N'-dicarbazolyl-1, 4-dimethene-benzene. The WOLED showed stable Commission Internationale de L'Eclairage coordinates and a high efficency of 9.6 cd A{sup -1} when the current density was 1.8 A m{sup -2}. The maximum luminance of the device achieved was 17 400 cd m{sup -2} when the current density was 3000 A m{sup -2}.

  10. Formation of double layers

    International Nuclear Information System (INIS)

    Leung, P.; Wong, A.Y.; Quon, B.H.

    1981-01-01

    Experiments on both stationary and propagating double layers and a related analytical model are described. Stationary double layers were produced in a multiple plasma device, in which an electron drift current was present. An investigation of the plasma parameters for the stable double layer condition is described. The particle distribution in the stable double layer establishes a potential profile, which creates electron and ion beams that excite plasma instabilities. The measured characteristics of the instabilities are consistent with the existence of the double layer. Propagating double layers are formed when the initial electron drift current is large. Ths slopes of the transition region increase as they propagate. A physical model for the formation of a double layer in the experimental device is described. This model explains the formation of the low potential region on the basis of the space charge. This space charge is created by the electron drift current. The model also accounts for the role of ions in double layer formation and explains the formation of moving double layers. (Auth.)

  11. Physical Layer Network Coding

    DEFF Research Database (Denmark)

    Fukui, Hironori; Yomo, Hironori; Popovski, Petar

    2013-01-01

    of interfering nodes and usage of spatial reservation mechanisms. Specifically, we introduce a reserved area in order to protect the nodes involved in two-way relaying from the interference caused by neighboring nodes. We analytically derive the end-to-end rate achieved by PLNC considering the impact......Physical layer network coding (PLNC) has the potential to improve throughput of multi-hop networks. However, most of the works are focused on the simple, three-node model with two-way relaying, not taking into account the fact that there can be other neighboring nodes that can cause....../receive interference. The way to deal with this problem in distributed wireless networks is usage of MAC-layer mechanisms that make a spatial reservation of the shared wireless medium, similar to the well-known RTS/CTS in IEEE 802.11 wireless networks. In this paper, we investigate two-way relaying in presence...

  12. Physical Layer Ethernet Clock Synchronization

    Science.gov (United States)

    2010-11-01

    42 nd Annual Precise Time and Time Interval (PTTI) Meeting 77 PHYSICAL LAYER ETHERNET CLOCK SYNCHRONIZATION Reinhard Exel, Georg...oeaw.ac.at Nikolaus Kerö Oregano Systems, Mohsgasse 1, 1030 Wien, Austria E-mail: nikolaus.keroe@oregano.at Abstract Clock synchronization ...is a service widely used in distributed networks to coordinate data acquisition and actions. As the requirement to achieve tighter synchronization

  13. Enhancement of device performance of organic solar cells by an interfacial perylene derivative layer

    KAUST Repository

    Kim, Inho; Haverinen, Hanna M.; Li, Jian; Jabbour, Ghassan E.

    2010-01-01

    We report that device performance of organic solar cells consisting of zinc phthalocyanine and fullerene (C60) can be enhanced by insertion of a perylene derivative interfacial layer between fullerene and bathocuproine (BCP) exciton blocking layer

  14. Measurement of in-plane elasticity of live cell layers using a pressure sensor embedded microfluidic device

    Science.gov (United States)

    Lin, Chien-Han; Wang, Chien-Kai; Chen, Yu-An; Peng, Chien-Chung; Liao, Wei-Hao; Tung, Yi-Chung

    2016-11-01

    In various physiological activities, cells experience stresses along their in-plane direction when facing substrate deformation. Capability of continuous monitoring elasticity of live cell layers during a period is highly desired to investigate cell property variation during various transformations under normal or disease states. This paper reports time-lapsed measurement of live cell layer in-plane elasticity using a pressure sensor embedded microfluidic device. The sensor converts pressure-induced deformation of a flexible membrane to electrical signals. When cells are cultured on top of the membrane, flexural rigidity of the composite membrane increases and further changes the output electrical signals. In the experiments, human embryonic lung fibroblast (MRC-5) cells are cultured and analyzed to estimate the in-plane elasticity. In addition, the cells are treated with a growth factor to simulate lung fibrosis to study the effects of cell transformation on the elasticity variation. For comparison, elasticity measurement on the cells by atomic force microscopy (AFM) is also performed. The experimental results confirm highly anisotropic configuration and material properties of cells. Furthermore, the in-plane elasticity can be monitored during the cell transformation after the growth factor stimulation. Consequently, the developed microfluidic device provides a powerful tool to study physical properties of cells for fundamental biophysics and biomedical researches.

  15. Theoretical studies on a TeO2/ZnO/diamond-layered structure for zero TCD SAW devices

    Science.gov (United States)

    Dewan, Namrata; Sreenivas, K.; Gupta, Vinay

    2008-08-01

    High-frequency surface acoustic wave (SAW) devices based on diamond substrate are useful because of their very high SAW velocity. In the present work, SAW propagation characteristics, such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of a TeO2/ZnO/diamond-layered structure, are examined using theoretical calculations. The ZnO/diamond bi-layer structure is found to exhibit a high positive TCD value. A zero TCD device structure is obtained after integration with a TeO2 over layer having a negative TCD value. Introduction of a non-piezoelectric TeO2 over layer on the bi-layer structure (ZnO/diamond) increases the coupling coefficient. A relatively low thickness of TeO2 thin film (~(1.6-3.1) × 10-3λ) is required to achieve temperature-stable SAW devices based on diamond.

  16. Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices.

    Science.gov (United States)

    Black, Jennifer M; Come, Jeremy; Bi, Sheng; Zhu, Mengyang; Zhao, Wei; Wong, Anthony T; Noh, Joo Hyon; Pudasaini, Pushpa R; Zhang, Pengfei; Okatan, Mahmut Baris; Dai, Sheng; Kalinin, Sergei V; Rack, Philip D; Ward, Thomas Zac; Feng, Guang; Balke, Nina

    2017-11-22

    Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal-insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment and theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.

  17. Aligned carbon nanotubes. Physics, concepts, fabrication and devices

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Zhifeng; Lan, Yucheng [Boston College, Chestnut Hill, MA (United States). Dept. of Physics; Wang, Yang [South China Normal Univ. Guangzhou (China). Inst. for Advanced Materials

    2013-07-01

    This book gives a survey of the physics and fabrication of carbon nanotubes and their applications in optics, electronics, chemistry and biotechnology. It focuses on the structural characterization of various carbon nanotubes, fabrication of vertically or parallel aligned carbon nanotubes on substrates or in composites, physical properties for their alignment, and applications of aligned carbon nanotubes in field emission, optical antennas, light transmission, solar cells, chemical devices, bio-devices, and many others. Major fabrication methods are illustrated in detail, particularly the most widely used PECVD growth technique on which various device integration schemes are based, followed by applications such as electrical interconnects, nanodiodes, optical antennas, and nanocoax solar cells, whereas current limitations and challenges are also be discussed to lay the foundation for future developments.

  18. Passivation layer breakdown during laser-fired contact formation for photovoltaic devices

    International Nuclear Information System (INIS)

    Raghavan, A.; DebRoy, T.; Palmer, T. A.

    2014-01-01

    Low resistance laser-fired ohmic contacts (LFCs) can be formed on the backside of Si-based solar cells using microsecond pulses. However, the impact of these longer pulse durations on the dielectric passivation layer is not clear. Retention of the passivation layer during processing is critical to ensure low recombination rates of electron-hole pairs at the rear surface of the device. In this work, advanced characterization tools are used to demonstrate that although the SiO 2 passivation layer melts directly below the laser, it is well preserved outside the immediate LFC region over a wide range of processing parameters. As a result, low recombination rates at the passivation layer/wafer interface can be expected despite higher energy densities associated with these pulse durations.

  19. Graphene device and method of using graphene device

    Science.gov (United States)

    Bouchiat, Vincent; Girit, Caglar; Kessler, Brian; Zettl, Alexander K.

    2015-08-11

    An embodiment of a graphene device includes a layered structure, first and second electrodes, and a dopant island. The layered structure includes a conductive layer, an insulating layer, and a graphene layer. The electrodes are coupled to the graphene layer. The dopant island is coupled to an exposed surface of the graphene layer between the electrodes. An embodiment of a method of using a graphene device includes providing the graphene device. A voltage is applied to the conductive layer of the graphene device. Another embodiment of a method of using a graphene device includes providing the graphene device without the dopant island. A dopant island is placed on an exposed surface of the graphene layer between the electrodes. A voltage is applied to the conductive layer of the graphene device. A response of the dopant island to the voltage is observed.

  20. Theoretical studies on a TeO2/ZnO/diamond-layered structure for zero TCD SAW devices

    International Nuclear Information System (INIS)

    Dewan, Namrata; Sreenivas, K; Gupta, Vinay

    2008-01-01

    High-frequency surface acoustic wave (SAW) devices based on diamond substrate are useful because of their very high SAW velocity. In the present work, SAW propagation characteristics, such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of a TeO 2 /ZnO/diamond-layered structure, are examined using theoretical calculations. The ZnO/diamond bi-layer structure is found to exhibit a high positive TCD value. A zero TCD device structure is obtained after integration with a TeO 2 over layer having a negative TCD value. Introduction of a non-piezoelectric TeO 2 over layer on the bi-layer structure (ZnO/diamond) increases the coupling coefficient. A relatively low thickness of TeO 2 thin film (∼(1.6–3.1) × 10 −3 λ) is required to achieve temperature-stable SAW devices based on diamond

  1. Defect Generation for a Hydrated Layer and Thermal Stability Based on Ba0.7Sr0.3TiO3/SiO2 as H+ Sensitive Layer in Ion-Sensitive Field-Effect Transistor Devices

    Science.gov (United States)

    Chen, Chun-Yuan; Chou, Jung-Chuan; Chou, Hsueh-Tao

    2009-04-01

    In this paper, we present a novel sensitive ion-sensitive field-effect transistor (ISFET) membrane based on Ba0.7Sr0.3TiO3 (BST)/SiO2 fabricated by sputtering deposition. The proposed device exhibits a linear shift in acidic solutions in the pH range from 1 to 10. The device sensitivity was about 50-55 mV/pH for different deposition times. We also examined the trapping behavior of the surface hydrated layer using the metal-insulator-semiconductor (MIS) structure. Results show that the hydration layer gives rise to stress polarity dependence of electron injection when immersed in pH buffer solutions. Injection from the gate electrode produces larger positive charges and interface state densities in contrast to the substrate injection, which causes simultaneous positive and negative charge trapping. A physical model that quantitatively describes the asymmetry associated with the hydrated diffusion layer is presented, and the temperature effects of BST/SiO2 ISFET devices in the range from 25 to 65 °C were examined. We observed that pH sensitivity increases with increasing temperature. The temperature coefficient of sensitivity (TCS) can be divided into two different ranges: 0.08 mV/pH °C between 25 and 45 °C, and 0.57 mV/pH °C between 45 and 65 °C. A better thermal stability is produced in the 25 and 45 °C range in comparison with other sensitive layers.

  2. Rendering Intelligence at Physical Layer for Smart Addressing and Multiple Access

    DEFF Research Database (Denmark)

    Sanyal, Rajarshi; Prasad, Ramjee; Cianca, Ernestina

    2010-01-01

    addressing of a node. For a typical closed user group type of network, we propose a multiple access mechanism and network topology which will not only eliminate the need of intelligent core network equipments in the network area , but to use this intelligent physical layer to directly reach any node over......The primary objective of this work is to propose a technique of wireless communication, where we render intelligence to the physical layer. We aim to realize a physical layer that can take part in some processes which is otherwise confined to higher layer signalling activities, like for example...... the fundamentals behind the proposed multiple access scheme and draws out the benefits compared to the existing multiple access processes based on cellular approach....

  3. Engineering few-layer MoTe2 devices by Co/hBN tunnel contacts

    Science.gov (United States)

    Zhu, Mengjian; Luo, Wei; Wu, Nannan; Zhang, Xue-ao; Qin, Shiqiao

    2018-04-01

    2H phase Molybdenum ditelluride (MoTe2) is a layered two-dimensional (2D) semiconductor that has recently gained extensive attention for its intriguing properties, demonstrating great potential for nanoelectronics and optoelectronics. Optimizing the electric contacts to MoTe2 is a critical step for realizing high performance devices. Here, we demonstrate Co/hBN tunnel contacts to few-layer MoTe2. In sharp contrast to the p-type conduction of Co contacted MoTe2, Co/hBN tunnel contacted MoTe2 devices show clear n-type transport properties. Our first principles calculation reveals that the inserted few-layer hBN strongly interacts with Co and significantly reduces its work-function by ˜1.2 eV, while MoTe2 itself has a much weaker influence on the work-function of Co. This allows us to build MoTe2 diodes using the mixed Co/hBN and Co contact architecture, which can be switched from p-n type to n-p type by changing the gate-voltage, paving the way for engineering multi-functional devices based on atomically thin 2D semiconductors.

  4. Effects of a Physical Education Supportive Curriculum and Technological Devices on Physical Activity

    Science.gov (United States)

    Clapham, Emily Dean; Sullivan, Eileen C.; Ciccomascolo, Lori E.

    2015-01-01

    The purpose of this study was to examine the effects of a physical education supportive curriculum and technological devices, heart rate monitor (HRM) and pedometer (PED), on physical activity. A single-subject ABAB research design was used to examine amount and level of participation in physical activity among 106 suburban fourth and fifth…

  5. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    Science.gov (United States)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-17

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  6. Wireless Physical Layer Security: On the Performance Limit of Secret-Key Agreement

    KAUST Repository

    Zorgui, Marwen

    2015-01-01

    Physical layer security (PLS) is a new paradigm aiming at securing communications between legitimate parties at the physical layer. Conventionally, achieving confidentiality in communication networks relies on cryptographic techniques such as public

  7. Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates

    International Nuclear Information System (INIS)

    Yum, J.H.; Akyol, T.; Lei, M.; Ferrer, D.A.; Hudnall, Todd W.; Downer, M.; Bielawski, C.W.; Bersuker, G.; Lee, J.C.; Banerjee, S.K.

    2012-01-01

    In a previous study, atomic layer deposited (ALD) BeO exhibited less interface defect density and hysteresis, as well as less frequency dispersion and leakage current density, at the same equivalent oxide thickness than Al 2 O 3 . Furthermore, its self-cleaning effect was better. In this study, the physical and electrical characteristics of ALD BeO grown on Si and GaAs substrates are further evaluated as a gate dielectric layer in III–V metal-oxide-semiconductor devices using transmission electron microscopy, selective area electron diffraction, second harmonic generation, and electrical analysis. An as-grown ALD BeO thin film was revealed as a layered single crystal structure, unlike the well-known ALD dielectrics that exhibit either poly-crystalline or amorphous structures. Low defect density in highly ordered ALD BeO film, less variability in electrical characteristics, and great stability under electrical stress were demonstrated. - Highlights: ► BeO is an excellent electrical insulator, but good thermal conductor. ► Highly crystalline film of BeO has been grown using atomic layer deposition. ► An ALD BeO precursor, which is not commercially available, has been synthesized. ► Physical and electrical characteristics have been investigated.

  8. Research on condensed matter and atomic physics using major experimental facilities and devices: Physics, chemistry, biology. Reports on results. Vol. 2. 3. Solid state physics and materials science

    International Nuclear Information System (INIS)

    1993-01-01

    This report in three volumes substantiates the contents of the programme survey published in September 1989. The progress reports cover the following research areas: Vol. I, (1). Atomic and molecular physics - free atoms, molecules, macromolecules, clusters, matrix-isolated atoms and molecules. (2) Physics and chemistry of surfaces and interfaces - epitaxy, surface structure, adsorption, electrical, magnetic, and optical properties, thin films, synthetic layer structure. Vol. II, (3). Solid-state physics, and materials science -structural research, lattice dynamics, magnetic structure and dynamics, electronic states; load; spin and pulse density fluctuations; diffusion and internal motion, defects, unordered systems and liquids. Vol. III, (4). Chemistry - bonding and structure, kinetics and reaction mechanisms, polymer research, analysis and synthesis. (5). Biology, - structure and dynamics of biological macromolecules, membrane and cell biology. (6) Development of methods and instruments - neutron sources, synchrotron sources, special accelerators, research with interlinked systems and devices. (orig.) [de

  9. Atomic layer deposition of dielectrics for carbon-based electronics

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J., E-mail: jiyoung.kim@utdallas.edu; Jandhyala, S.

    2013-11-01

    Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high-mobility and ability to carry high-current densities compared to conventional semiconductor materials like silicon. Therefore, there is a need to develop techniques to integrate robust gate dielectrics with high-quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition (ALD), physical assembly among others have been employed in order to integrate dielectrics for carbon nanotube and graphene based field-effect transistors. Owing to the difficulty in wetting pristine surfaces of nanotubes and graphene, most of the ALD methods require a seeding technique involving non-covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A comprehensive review regarding the various dielectric integration schemes for emerging devices and their limitations with respect to ALD based methods along with a future outlook is provided. - Highlights: • We introduce various dielectric integration schemes for carbon-based devices. • Physical vapor deposition methods tend to degrade device performance. • Atomic layer deposition on pristine surfaces of graphene and nanotube is difficult. • We review different seeding techniques for atomic layer deposition of dielectrics. • Compare the performance of graphene top-gate devices with different dielectrics.

  10. Atomic layer deposition of dielectrics for carbon-based electronics

    International Nuclear Information System (INIS)

    Kim, J.; Jandhyala, S.

    2013-01-01

    Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high-mobility and ability to carry high-current densities compared to conventional semiconductor materials like silicon. Therefore, there is a need to develop techniques to integrate robust gate dielectrics with high-quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition (ALD), physical assembly among others have been employed in order to integrate dielectrics for carbon nanotube and graphene based field-effect transistors. Owing to the difficulty in wetting pristine surfaces of nanotubes and graphene, most of the ALD methods require a seeding technique involving non-covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A comprehensive review regarding the various dielectric integration schemes for emerging devices and their limitations with respect to ALD based methods along with a future outlook is provided. - Highlights: • We introduce various dielectric integration schemes for carbon-based devices. • Physical vapor deposition methods tend to degrade device performance. • Atomic layer deposition on pristine surfaces of graphene and nanotube is difficult. • We review different seeding techniques for atomic layer deposition of dielectrics. • Compare the performance of graphene top-gate devices with different dielectrics

  11. An inorganic electroluminescent device using calcium phosphate doped with Eu{sup 3+} as the luminescent layer

    Energy Technology Data Exchange (ETDEWEB)

    Koide, Takuhiro [Department of Chemistry and Chemical Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa-shi, Yamagata 992-8510 (Japan); Ito, Michimasa [Tokai Rika Co. Ltd., 3-260 Toyota, Oguchi-cho, Niwa-gun, Aichi 480-0195 (Japan); Kawai, Takahiro [Department of Biochemical Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa-shi, Yamagata 992-8510 (Japan); Matsushima, Yuta, E-mail: ymatsush@yz.yamagata-u.ac.jp [Department of Chemistry and Chemical Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa-shi, Yamagata 992-8510 (Japan)

    2013-03-20

    Highlights: ► A thin film electroluminescent device was fabricated with a calcium phosphate as the light emitting layer. ► The light emitting layer was formed on the BaTiO{sub 3} disk by a spray pyrolysis method. ► Among the examined calcium phosphates, β-Ca{sub 3}(PO{sub 4}){sub 2}:Eu{sup 3+} showed the best photo- and electroluminescent properties. -- Abstract: In this work, the availability of calcium phosphates for the light emitting layer of a thin-film electroluminescent (TFEL) device was investigated. The goal of this work was to develop an electronic device with ordinary materials such as a calcium phosphate, the principal ingredient of the skeleton of the vertebrate. Compositions of 2CaO·P{sub 2}O{sub 5} (Ca{sub 2}P{sub 2}O{sub 7}), 3CaO·P{sub 2}O{sub 5} (Ca{sub 3}(PO{sub 4}){sub 2}) and 4CaO·P{sub 2}O{sub 5} (Ca{sub 4}O(PO{sub 4}){sub 2}) were examined as the candidates for the light emitting layer. Before composing the TFEL device, the photoluminescence (PL) properties of the three compositions were investigated in the powder form to evaluate the performance as the light emitting layer. Among the examined calcium phosphates, Eu-doped β-Ca{sub 3}(PO{sub 4}){sub 2} showed the best PL properties. It showed typical red-emission from Eu{sup 3+}. The PL intensity was enhanced with the heat-treatment temperature and the optimal temperature was 1250 °C. Then, a TFEL device was prepared by a spray pyrolysis method with the β-Ca{sub 3}(PO{sub 4}){sub 2}:Eu{sup 3+} phosphor layer on a BaTiO{sub 3} disk. The TFEL device exhibited the red emission originating in Eu{sup 3+} at 610 nm under applying alternating voltage. Different from the power sample, the intensity of EL decreased with the heat-treatment temperature from 1000 to 1250 °C. The deterioration of EL at the higher temperatures was attributed to chemical interaction between the phosphor layer and the BaTiO{sub 3} disk.

  12. High-efficiency white organic light-emitting devices with a non-doped yellow phosphorescent emissive layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Juan; Yu Junsheng, E-mail: jsyu@uestc.edu.cn; Hu Xiao; Hou Menghan; Jiang Yadong

    2012-03-30

    Highly efficient phosphorescent white organic light-emitting devices (PHWOLEDs) with a simple structure of ITO/TAPC (40 nm)/mCP:FIrpic (20 nm, x wt.%)/bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2} Prime ] iridium (acetylacetonate) (tbt){sub 2}Ir(acac) (y nm)/Bphen (30 nm)/Mg:Ag (200 nm) have been developed, by inserting a thin layer of non-doped yellow phosphorescent (tbt){sub 2}Ir(acac) between doped blue emitting layer (EML) and electron transporting layer. By changing the doping concentration of the blue EML and the thickness of the non-doped yellow EML, a PHWOLED comprised of higher blue doping concentration and thinner yellow EML achieves a high current efficiency of 31.7 cd/A and Commission Internationale de l'Eclairage coordinates of (0.33, 0.41) at a luminance of 3000 cd/m{sup 2} could be observed. - Highlights: Black-Right-Pointing-Pointer We introduce a simplified architecture for phosphorescent white organic light-emitting device. Black-Right-Pointing-Pointer The key concept of device fabrication is combination of doped blue emissive layer (EML) with non-doped ultra-thin yellow EML. Black-Right-Pointing-Pointer Doping concentration of the blue EML and thickness of the yellow EML are sequentially adjusted. Black-Right-Pointing-Pointer High device performance is achieved due to improved charge carrier balance as well as two parallel emission mechanisms in the EMLs.

  13. White light emission from organic-inorganic hererostructure devices by using CdSe quantum dots as emitting layer

    International Nuclear Information System (INIS)

    Tang Aiwei; Teng Feng; Gao Yinhao; Li Dan; Zhao Suling; Liang Chunjun; Wang Yongsheng

    2007-01-01

    In this paper, white light emission was obtained from organic-inorganic heterostructure devices by using CdSe quantum dots as emitting layer, in which CdSe quantum dots were synthesized via a colloidal chemical approach by using CdO and Se powder as precursors. Photoluminescence of CdSe quantum dots demonstrated a white emission with a full wavelength at half maximum (FWHM) of about 200 nm under ambient conditions, and the white emission could be observed in both multilayer device ITO/PEDOT:PSS/CdSe/BCP/Alq 3 /Al and single-layer device: ITO/PEDOT:PSS/CdSe/Al. The broad emission was attributed to the inhomogeneous broadening. The CIE coordinates of the multilayer device were x=0.35 and y=0.40. The white-light-emitting diodes with CdSe quantum dots as the emitting layer are potentially useful in lighting applications

  14. Using Mobile Devices in Physical Education to Enhance Learning and Physical Activity for At-Risk Girls

    Science.gov (United States)

    Gibbone, Anne; Perez, Samantha L.; Virgilio, Stephen J.

    2014-01-01

    The purpose of the article is to illustrate how a physical education program uses mobile devices to motivate at-risk girls attending an urban charter school. Permitting students to use mobile devices in physical education gives students a "technological freedom" that has been removed in other contexts. The apps described in this article…

  15. Revisiting of Channel Access Mechanisms in Mobile Wireless Networks through Exploiting Physical Layer Technologies

    Directory of Open Access Journals (Sweden)

    Junmei Yao

    2018-01-01

    Full Text Available The wireless local area networks (WLANs have been widely deployed with the rapid development of mobile devices and have further been brought into new applications with infrastructure mobility due to the growth of unmanned aerial vehicles (UAVs. However, the WLANs still face persistent challenge on increasing the network throughput to meet the customer’s requirement and fight against the node mobility. Interference is a well-known issue that would degrade the network performance due to the broadcast characteristics of the wireless signals. Moreover, with infrastructure mobility, the interference becomes the key obstacle in pursuing the channel capacity. Legacy interference management mechanism through the channel access control in the MAC layer design of the 802.11 standard has some well-known drawbacks, such as exposed and hidden terminal problems, inefficient rate adaptation, and retransmission schemes, making the efficient interference management an everlasting research topic over the years. Recently, interference management through exploiting physical layer mechanisms has attracted much research interest and has been proven to be a promising way to improve the network throughput, especially under the infrastructure mobility scenarios which provides more indicators for node dynamics. In this paper, we introduce a series of representative physical layer techniques and analyze how they are exploited for interference management to improve the network performance. We also provide some discussions about the research challenges and give potential future research topics in this area.

  16. First steps towards the realization of a double layer perceptron based on organic memristive devices

    Science.gov (United States)

    Emelyanov, A. V.; Lapkin, D. A.; Demin, V. A.; Erokhin, V. V.; Battistoni, S.; Baldi, G.; Dimonte, A.; Korovin, A. N.; Iannotta, S.; Kashkarov, P. K.; Kovalchuk, M. V.

    2016-11-01

    Memristors are widely considered as promising elements for the efficient implementation of synaptic weights in artificial neural networks (ANNs) since they are resistors that keep memory of their previous conductive state. Whereas demonstrations of simple neural networks (e.g., a single-layer perceptron) based on memristors already exist, the implementation of more complicated networks is more challenging and has yet to be reported. In this study, we demonstrate linearly nonseparable combinational logic classification (XOR logic task) using a network implemented with CMOS-based neurons and organic memrisitive devices that constitutes the first step toward the realization of a double layer perceptron. We also show numerically the ability of such network to solve a principally analogue task which cannot be realized by digital devices. The obtained results prove the possibility to create a multilayer ANN based on memristive devices that paves the way for designing a more complex network such as the double layer perceptron.

  17. First steps towards the realization of a double layer perceptron based on organic memristive devices

    Directory of Open Access Journals (Sweden)

    A. V. Emelyanov

    2016-11-01

    Full Text Available Memristors are widely considered as promising elements for the efficient implementation of synaptic weights in artificial neural networks (ANNs since they are resistors that keep memory of their previous conductive state. Whereas demonstrations of simple neural networks (e.g., a single-layer perceptron based on memristors already exist, the implementation of more complicated networks is more challenging and has yet to be reported. In this study, we demonstrate linearly nonseparable combinational logic classification (XOR logic task using a network implemented with CMOS-based neurons and organic memrisitive devices that constitutes the first step toward the realization of a double layer perceptron. We also show numerically the ability of such network to solve a principally analogue task which cannot be realized by digital devices. The obtained results prove the possibility to create a multilayer ANN based on memristive devices that paves the way for designing a more complex network such as the double layer perceptron.

  18. Research on condensed matter and atomic physics, using major experimental facilities and devices: Physics, chemistry, biology. Reports on results. Vol. 1. 1. Atomic and molecular physics. 2. Physics and chemistry of surfaces and interfaces

    International Nuclear Information System (INIS)

    1993-01-01

    This report in three volumes substantiates the contents of the programme survey published in September 1989. The progress reports cover the following research areas: Vol. I, (1). Atomic and molecular physics - free atoms, molecules, macromolecules, clusters, matrix-isolated atoms and molecules. (2) Physics and chemistry of surfaces and interfaces - epitaxy, surface structure, adsorption, electrical, magnetic, and optical properties, thin films, synthetic layer structure. Vol. II, (3). Solid-state physics, and materials science -structural research, lattice dynamics, magnetic structure and dynamics, electronic states; load; spin and pulse density fluctuations; diffusion and internal motion, defects, unordered systems and liquids. Vol. III, (4). Chemistry - bonding and structure, kinetics and reaction mechanisms, polymer research, analysis and synthesis. (5). Biology, - structure and dynamics of biological macromolecules, membrane and cell biology. (6) Development of methods and instruments - neutron sources, synchrotron sources, special accelerators, research with interlinked systems and devices. (orig.) [de

  19. Noncooperative 802.11 MAC Layer Fingerprinting and Tracking of Mobile Devices

    Directory of Open Access Journals (Sweden)

    Pieter Robyns

    2017-01-01

    Full Text Available We present two novel noncooperative MAC layer fingerprinting and tracking techniques for Wi-Fi (802.11 enabled mobile devices. Our first technique demonstrates how a per-bit entropy analysis of a single captured frame allows an adversary to construct a fingerprint of the transmitter that is 80.0 to 67.6 percent unique for 50 to 100 observed devices and 33.0 to 15.1 percent unique for 1,000 to 10,000 observed devices. We show how existing mitigation strategies such as MAC address randomization can be circumvented using only this fingerprint and temporal information. Our second technique leverages peer-to-peer 802.11u Generic Advertisement Service (GAS requests and 802.11e Block Acknowledgement (BA requests to instigate transmissions on demand from devices that support these protocols. We validate these techniques using two datasets, one of which was recorded at a music festival containing 28,048 unique devices and the other at our research lab containing 138 unique devices. Finally, we discuss a number of countermeasures that can be put in place by mobile device vendors in order to prevent noncooperative tracking through the discussed techniques.

  20. Fabrication and characterization of a cell electrostimulator device combining physical vapor deposition and laser ablation

    Science.gov (United States)

    Aragón, Angel L.; Pérez, Eliseo; Pazos, Antonio; Bao-Varela, Carmen; Nieto, Daniel

    2017-08-01

    In this work we present the process of fabrication and optimization of a prototype of a cell electrostimulator device for medical application combining physical vapor deposition and laser ablation. The fabrication of the first prototype begins with a deposition of a thin layer of 200 nm of aluminium on a borosilicate glass substrate using physical vapor deposition (PVD). In the second stage the geometry design of the electrostimulator is made in a CAD-like software available in a Nd:YVO4 Rofin Power line 20E, operating at the fundamental wavelength of 1064 nm and 20 ns pulse width. Choosing the proper laser parameters the negative of the electrostimulator desing is ablated. After that the glass is assembled between two polycarbonate sheets and a thick sheet of polydimethylsiloxane (PDMS). The PDMS sheet has a round hole in where cells are placed. There is also included a thin soda-lime silicate glass (100 μm) between the electrostimulator and the PMDS to prevent the cells for being in contact with the electric circuit. In order to control the electrical signal applied to the electrostimulator is used a digital I/O device from National Instruments (USB-6501) which provides 5 V at the output monitored by a software programmed in LabVIEW. Finally, the optical and electrical characterization of the cell electrostimulator device is presented.

  1. Transparent Electrodes Based on Silver Nanowire Networks: From Physical Considerations towards Device Integration.

    Science.gov (United States)

    Bellet, Daniel; Lagrange, Mélanie; Sannicolo, Thomas; Aghazadehchors, Sara; Nguyen, Viet Huong; Langley, Daniel P; Muñoz-Rojas, David; Jiménez, Carmen; Bréchet, Yves; Nguyen, Ngoc Duy

    2017-05-24

    The past few years have seen a considerable amount of research devoted to nanostructured transparent conducting materials (TCM), which play a pivotal role in many modern devices such as solar cells, flexible light-emitting devices, touch screens, electromagnetic devices, and flexible transparent thin film heaters. Currently, the most commonly used TCM for such applications (ITO: Indium Tin oxide) suffers from two major drawbacks: brittleness and indium scarcity. Among emerging transparent electrodes, silver nanowire (AgNW) networks appear to be a promising substitute to ITO since such electrically percolating networks exhibit excellent properties with sheet resistance lower than 10 Ω/sq and optical transparency of 90%, fulfilling the requirements of most applications. In addition, AgNW networks also exhibit very good mechanical flexibility. The fabrication of these electrodes involves low-temperature processing steps and scalable methods, thus making them appropriate for future use as low-cost transparent electrodes in flexible electronic devices. This contribution aims to briefly present the main properties of AgNW based transparent electrodes as well as some considerations relating to their efficient integration in devices. The influence of network density, nanowire sizes, and post treatments on the properties of AgNW networks will also be evaluated. In addition to a general overview of AgNW networks, we focus on two important aspects: (i) network instabilities as well as an efficient Atomic Layer Deposition (ALD) coating which clearly enhances AgNW network stability and (ii) modelling to better understand the physical properties of these networks.

  2. Effective Passivation and Tunneling Hybrid a-SiOx(In) Layer in ITO/n-Si Heterojunction Photovoltaic Device.

    Science.gov (United States)

    Gao, Ming; Wan, Yazhou; Li, Yong; Han, Baichao; Song, Wenlei; Xu, Fei; Zhao, Lei; Ma, Zhongquan

    2017-05-24

    In this article, using controllable magnetron sputtering of indium tin oxide (ITO) materials on single crystal silicon at 100 °C, the optoelectronic heterojunction frame of ITO/a-SiO x (In)/n-Si is simply fabricated for the purpose of realizing passivation contact and hole tunneling. It is found that the gradation profile of indium (In) element together with silicon oxide (SiO x /In) within the ultrathin boundary zone between ITO and n-Si occurs and is characterized by X-ray photoelectron spectroscopy with the ion milling technique. The atomistic morphology and physical phase of the interfacial layer has been observed with a high-resolution transmission electron microscope. X-ray diffraction, Hall effect measurement, and optical transmittance with Tauc plot have been applied to the microstructure and property analyses of ITO thin films, respectively. The polycrystalline and amorphous phases have been verified for ITO films and SiO x (In) hybrid layer, respectively. For the quantum transport, both direct and defect-assisted tunneling of photogenerated holes through the a-SiO x (In) layer is confirmed. Besides, there is a gap state correlative to the indium composition and located at E v + 4.60 eV in the ternary hybrid a-SiO x (In) layer that is predicted by density functional theory of first-principles calculation, which acts as an "extended delocalized state" for direct tunneling of the photogenerated holes. The reasonable built-in potential (V bi = 0.66 V) and optimally controlled ternary hybrid a-SiO x (In) layer (about 1.4 nm) result in that the device exhibits excellent PV performance, with an open-circuit voltage of 0.540 V, a short-circuit current density of 30.5 mA/cm 2 , a high fill factor of 74.2%, and a conversion efficiency of 12.2%, under the AM 1.5 illumination. The work function difference between ITO (5.06 eV) and n-Si (4.31 eV) is determined by ultraviolet photoemission spectroscopy and ascribed to the essence of the built-in-field of the PV device

  3. Physically-based modelling of polycrystalline semiconductor devices

    International Nuclear Information System (INIS)

    Lee, S.

    2000-01-01

    Thin-film technology using polycrystalline semiconductors has been widely applied to active-matrix-addressed liquid crystal displays (AMLCDs) where thin-film transistors act as digital pixel switches. Research and development is in progress to integrate the driver circuits around the peripheral of the display, resulting in significant cost reduction of connections between rows and columns and the peripheral circuitry. For this latter application, where for instance it is important to control the greyscale voltage level delivered to the pixel, an understanding of device behaviour is required so that models can be developed for analogue circuit simulation. For this purpose, various analytical models have been developed based on that of Seto who considered the effect of monoenergetic trap states and grain boundaries in polycrystalline materials but not the contribution of the grains to the electrical properties. The principal aim of this thesis is to describe the use of a numerical device simulator (ATLAS) as a tool to investigate the physics of the trapping process involved in the device operation, which additionally takes into account the effect of multienergetic trapping levels and the contribution of the grain into the modelling. A study of the conventional analytical models is presented, and an alternative approach is introduced which takes into account the grain regions to enhance the accuracy of the analytical modelling. A physically-based discrete-grain-boundary model and characterisation method are introduced to study the effects of the multienergetic trap states on the electrical characteristics of poly-TFTs using CdSe devices as the experimental example, and the electrical parameters such as the density distribution of the trapping states are extracted. The results show excellent agreement between the simulation and experimental data. The limitations of this proposed physical model are also studied and discussed. (author)

  4. Study on edge plasma physics and particle control in the Heliotron-E device

    Energy Technology Data Exchange (ETDEWEB)

    Mizuuchi, T; Obiki, T; Noda, N; Matsuura, H; Kondo, K; Akaishi, K; Motojima, O; Kaneko, H; Zushi, H; Takeiri, Y

    1989-04-01

    The edge plasma physics and the particle control under the intrinsic magnetic limiter configuration of a helical system have been studied with the Heliotron-E device, where currentless plasmas of T/sub e//le/1-2 keV, T/sub i//le/1 keV and anti n/sub e//le/2x10/sup 20//m/sup 3/ are produced by a combination of ECRH, NBI and/or ICRH. It is indicated that the separatrix region of the heliotron device is able to act as a divertor magnetic field. According to calculations of the magnetic field line in the edge region, the separatrix region has some different characteristics from the scrape-off layer in tokamak devices; the existence of a fine structure in the separatrix region and asymmetry of the region in toroidal and poloidal directions are observed. A localized pattern of the heat load on the first wall is experimentally observed. This agrees with the heat-load profile expected from the magnetic configuration and the distribution of the plasma in the edge region. A carbonization of the first wall is successfully applied to the Heliotron E device for reduction of metallic impurity contents. The heat load at the divertor trace decreased and that on the other part of the first wall increased in the high recycling conditions after the carbonization. (orig.).

  5. Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

    Directory of Open Access Journals (Sweden)

    W. J. Liu

    2016-01-01

    Full Text Available We demonstrated a flash memory device with chemical-vapor-deposited graphene as a charge trapping layer. It was found that the average RMS roughness of block oxide on graphene storage layer can be significantly reduced from 5.9 nm to 0.5 nm by inserting a seed metal layer, which was verified by AFM measurements. The memory window is 5.6 V for a dual sweep of ±12 V at room temperature. Moreover, a reduced hysteresis at the low temperature was observed, indicative of water molecules or −OH groups between graphene and dielectric playing an important role in memory windows.

  6. Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer

    KAUST Repository

    Chand, Umesh

    2017-08-05

    We propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.

  7. Increasing physical activity through mobile device interventions: A systematic review.

    Science.gov (United States)

    Muntaner, Adrià; Vidal-Conti, Josep; Palou, Pere

    2016-09-01

    Physical inactivity is a health problem that affects people worldwide and has been identified as the fourth largest risk factor for overall mortality (contributing to 6% of deaths globally). Many researchers have tried to increase physical activity levels through traditional methods without much success. Thus, many researchers are turning to mobile technology as an emerging method for changing health behaviours. This systematic review sought to summarise and update the existing scientific literature on increasing physical activity through mobile device interventions, taking into account the methodological quality of the studies. The articles were identified by searching the PubMed, SCOPUS and SPORTDiscus databases for studies published between January 2003 and December 2013. Studies investigating efforts to increase physical activity through mobile phone or even personal digital assistant interventions were included. The search results allowed the inclusion of 11 studies that gave rise to 12 publications. Six of the articles included in this review reported significant increases in physical activity levels. The number of studies using mobile devices for interventions has increased exponentially in the last few years, but future investigations with better methodological quality are needed to draw stronger conclusions regarding how to increase physical activity through mobile device interventions. © The Author(s) 2015.

  8. The role of molecular architecture and layer composition on the properties and performance of CuPc-C6 photovoltaic devices

    International Nuclear Information System (INIS)

    Schultes, S.M.; Sullivan, P.; Heutz, S.; Sanderson, B.M.; Jones, T.S.

    2005-01-01

    We have studied the effects of molecular architecture, co-deposition and annealing on the properties and performance of photovoltaic cells based on copper phthalocyanine (CuPc)-fullerene (C 6 ) heterojunctions. Significant improvements in performance are achieved when mixed CuPc:C 6 layers are incorporated into the device structure due to the creation of an intermolecularly mixed donor (D)-acceptor (A) blend that favours efficient exciton dissociation. We utilise the control afforded by organic molecular beam deposition to show that the mixed-layer composition plays an important role in determining device performance and correlate device efficiency to the morphological and spectroscopic properties of the organic layers. A maximum power conversion efficiency of η p = 1.17% is achieved for devices containing a mixed layer of ratio 75:25 CuPc:C 6 surrounded by thin continuous layers of pure organic material at the electrode interfaces. A structure containing a compositional gradient where the CuPc:C 6 composition is varied from purely D to purely A via three mixed layers of increasing A composition leads to a further improvements in efficiency (η p = 1.36%). Finally, we use thermal annealing to show how structural defects and morphological templating of organic thin films reduces the interfacial area for exciton separation and yields poor device performance

  9. Alignment technology and applications of liquid crystal devices

    CERN Document Server

    Takatoh, Kohki; Hasegawa, Ray; Koden, Mitsushiro; Itoh, Nobuyuki; Hasegawa, Masaki

    2005-01-01

    Alignment phenomena are characteristic of liquid crystalline materials, and understanding them is critically important in understanding the essential features and behavior of liquid crystals and the performance of Liquid Crystal Devices (LCDs). Furthermore, in LCD production lines, the alignment process is of practical importance. Alignment Technologies and Applications of Liquid Crystal Devices demonstrates both the fundamental and practical aspects of alignment phenomena in liquid crystals. The physical basis of alignment phenomena is first introduced in order to aid the understanding of the various physical phenomena observed in the interface between liquid crystalline materials and alignment layer surfaces. Methods for the characterization of surfaces, which induce the alignment phenomena, and of the alignment layer itself are introduced. These methods are useful for the research of liquid crystalline materials and devices in academic research as well as in industry. In the practical sections, the alignme...

  10. Signal processing approaches to secure physical layer communications in multi-antenna wireless systems

    CERN Document Server

    Hong, Y-W Peter; Kuo, C-C Jay

    2013-01-01

    This book introduces various signal processing approaches to enhance physical layer secrecy in multi-antenna wireless systems. Wireless physical layer secrecy has attracted much attention in recent years due to the broadcast nature of the wireless medium and its inherent vulnerability to eavesdropping. While most articles on physical layer secrecy focus on the information-theoretic aspect, we focus specifically on the signal processing aspects, including beamforming and precoding techniques for data transmission and discriminatory training schemes for channel estimation. The discussions will c

  11. Fabrication of hybrid molecular devices using multi-layer graphene break junctions

    Science.gov (United States)

    Island, J. O.; Holovchenko, A.; Koole, M.; Alkemade, P. F. A.; Menelaou, M.; Aliaga-Alcalde, N.; Burzurí, E.; van der Zant, H. S. J.

    2014-11-01

    We report on the fabrication of hybrid molecular devices employing multi-layer graphene (MLG) flakes which are patterned with a constriction using a helium ion microscope or an oxygen plasma etch. The patterning step allows for the localization of a few-nanometer gap, created by electroburning, that can host single molecules or molecular ensembles. By controlling the width of the sculpted constriction, we regulate the critical power at which the electroburning process begins. We estimate the flake temperature given the critical power and find that at low powers it is possible to electroburn MLG with superconducting contacts in close proximity. Finally, we demonstrate the fabrication of hybrid devices with superconducting contacts and anthracene-functionalized copper curcuminoid molecules. This method is extendable to spintronic devices with ferromagnetic contacts and a first step towards molecular integrated circuits.

  12. Physical and Cross-Layer Security Enhancement and Resource Allocation for Wireless Networks

    Science.gov (United States)

    Bashar, Muhammad Shafi Al

    2011-01-01

    In this dissertation, we present novel physical (PHY) and cross-layer design guidelines and resource adaptation algorithms to improve the security and user experience in the future wireless networks. Physical and cross-layer wireless security measures can provide stronger overall security with high efficiency and can also provide better…

  13. Physical concepts of materials for novel optoelectronic device applications II: Device physics and applications; Proceedings of the Meeting, Aachen, Federal Republic of Germany, Oct. 28-Nov. 2, 1990

    International Nuclear Information System (INIS)

    Razeghi, M.

    1991-01-01

    The present conference on physical concepts for materials for novel optoelectronic device applications encompasses the device physics and applications including visible, IR, and far-IR sources, optoelectronic quantum devices, the physics and applications of high-Tc superconducting materials, photodetectors and modulators, and the electronic properties of heterostructures. Other issues addressed include semiconductor waveguides for optical switching, wide band-gap semiconductors, Si and Si-Ge alloys, transport phenomena in heterostructures and quantum wells, optoelectronic integrated circuits, nonlinear optical phenomena in bulk and multiple quantum wells, and optoelectronic technologies for microwave applications. Also examined are optical computing, current transport in charge-injection devices, thin films of YBaCuO for electronic applications, indirect stimulated emission at room temperature in the visible range, and a laser with active-element rectangular geometry

  14. Chemical and physical passivation of type II strained-layer superlattice devices by means of thiolated self-assembled monolayers and polymer encapsulates

    Science.gov (United States)

    Henry, Nathan C.; Knorr, Daniel B.; Williams, Kristen S.; Baril, Neil; Nallon, Eric; Lenhart, Joseph L.; Andzelm, Jan W.; Pellegrino, Joseph; Tidrow, Meimei; Cleveland, Erin; Bandara, Sumith

    2015-05-01

    The efficacy of solution deposition of thiolated self-assembled monolayers (SAMs) has been explored for the purpose of passivating III-V type II superlattice (T2SL) photodetectors, more specifically a p-type heterojunction device. Sulfur passivation has previously been achieved on T2SL devices. However, degradation over time, temperature sensitivity and inconsistent reproducibility necessitate a physical encapsulate that can chemically bond to the chemical passivant. Thus, this research investigates two passivation methods, surface passivation with a thiol monolayer and passivation with a polymer encapsulant with a view toward future combination of these techniques. Analysis of the physical and chemical condition of the surface prior to deposition assisted in the development of ideal processes for optimized film quality. Successful deposition was facilitated by in situ oxide removal. Various commercially available functional (cysteamine) and non-functional (alkane) thiolated monolayers were investigated. Dark current was reduced by 3 orders of magnitude and achieved negligible surface leakage at low bias levels. The lowest dark current result, 7.69 × 10-6 A/cm2 at 50 mV, was achieved through passivation with cysteamine.

  15. Secure physical layer using dynamic permutations in cognitive OFDMA systems

    DEFF Research Database (Denmark)

    Meucci, F.; Wardana, Satya Ardhy; Prasad, Neeli R.

    2009-01-01

    This paper proposes a novel lightweight mechanism for a secure Physical (PHY) layer in Cognitive Radio Network (CRN) using Orthogonal Frequency Division Multiplexing (OFDM). User's data symbols are mapped over the physical subcarriers with a permutation formula. The PHY layer is secured...... with a random and dynamic subcarrier permutation which is based on a single pre-shared information and depends on Dynamic Spectrum Access (DSA). The dynamic subcarrier permutation is varying over time, geographical location and environment status, resulting in a very robust protection that ensures...... confidentiality. The method is shown to be effective also for existing non-cognitive systems. The proposed mechanism is effective against eavesdropping even if the eavesdropper adopts a long-time patterns analysis, thus protecting cryptography techniques of higher layers. The correlation properties...

  16. Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

    Science.gov (United States)

    Repins, Ingrid L.; Kuciauskas, Darius

    2015-07-07

    A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

  17. Social-Aware Relay Selection for Cooperative Multicast Device-to-Device Communications

    Directory of Open Access Journals (Sweden)

    Francesco Chiti

    2017-12-01

    Full Text Available The increasing use of social networks such as Facebook, Twitter, and Instagram to share photos, video streaming, and music among friends has generated a huge increase in the amount of data traffic over wireless networks. This social behavior has triggered new communication paradigms such as device-to-device (D2D and relaying communication schemes, which are both considered as strong drivers for the next fifth-generation (5G cellular systems. Recently, the social-aware layer and its relationship to and influence on the physical communications layer have gained great attention as emerging focus points. We focus here on the case of relaying communications to pursue the multicast data dissemination to a group of users forming a social community through a relay node, according to the extension of the D2D mode to the case of device-to-many devices. Moreover, in our case, the source selects the device to act as the relay among different users of the multicast group by taking into account both the propagation link conditions and the relay social-trust level with the constraint of minimizing the end-to-end content delivery delay. An optimization procedure is also proposed in order to achieve the best performance. Finally, numerical results are provided to highlight the advantages of considering the impact of social level on the end-to-end delivery delay in the integrated social–physical network in comparison with the classical relay-assisted multicast communications for which the relay social-trust level is not considered.

  18. SOLID-STATE STORAGE DEVICE WITH PROGRAMMABLE PHYSICAL STORAGE ACCESS

    DEFF Research Database (Denmark)

    2017-01-01

    a storage device action request, and the storage device evaluating a first rule of the one or more rules by determining if the received request fulfills request conditions comprised in the first rule, and in the affirmative the storage device performing request actions comprised in the first rule......Embodiments of the present invention includes a method of operating a solid-state storage device, comprising a storage device controller in the storage device receiving a set of one or more rules, each rule comprising (i) one or more request conditions to be evaluated for a storage device action...... request received from a host computer, and (ii) one or more request actions to be performed on a physical address space of a non-volatile storage unit in the solid-state storage device in case the one or more request conditions are fulfilled; the method further comprises: the storage device receiving...

  19. Physical limitations of semiconductor devices defects, reliability and esd protection

    CERN Document Server

    Vashchenko, V A

    2008-01-01

    Provides an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics. This title focuses on power semiconductor devices and self-triggering pulsed power devices for ESD protection clamps.

  20. Efficient white organic light emitting devices with dual emitting layers

    International Nuclear Information System (INIS)

    Wu Yaoshan; Hwang Shiaowen; Chen Hsianhung; Lee Mengting; Shen Wenjian; Chen, C.H.

    2005-01-01

    In this paper, a new white organic light-emitting device (OLED) with the structure of indium tin oxide / CF x / 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-biphenyl (NPB) (30 nm)/NPB: 2,8-di(t-butyl)-5,11-di[4-(t-butyl)phenyl]-6,12-diphenylnaphthacene (20 nm; 1.6 %) / 2-methyl-9,10-di(2-naphthyl) anthracene: p-bis(p-N,N-di-phenyl-aminostyryl)benzene (40 nm, 3%) / aluminum tris(8-hydroxyquinoline) (20 nm) / LiF (1 nm) / Al (200 nm) has been investigated. The device showed white emission with a high-luminous yield of 9.75 cd/A at 20 mA/cm 2 , but its Commission Internationale de l'Eclairage chromaticity coordinates appeared to change from (0.34, 0.42) at 6 mA/cm2 to (0.27, 0.37) at 200 mA/cm 2 due to the shift of recombination zone. The change of color with drive current was suppressed by introduction of an electron-blocking layer of NPB along with a hole-blocking layer of aluminum (III) bis(2-methyl-8-quinolinato)4-phenylphenolato to the white OLED which successfully confined the recombination site and achieved a luminous yield of 9.9 cd/A at 20 mA/cm 2

  1. Self-healing of cracks in Ag joining layer for die-attachment in power devices

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Chuantong, E-mail: chenchuantong@sanken.osaka-u.ac.jp; Nagao, Shijo; Suganuma, Katsuaki; Jiu, Jinting; Zhang, Hao; Sugahara, Tohru [Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567-0047 (Japan); Iwashige, Tomohito; Sugiura, Kazuhiko; Tsuruta, Kazuhiro [Research Division 3, Denso Corporation, Komenoki-cho, Minamiyama 500-1, Nissin, Aichi 470-0111 (Japan)

    2016-08-29

    Sintered silver (Ag) joining has attracted significant interest in power devices modules for its ability to form stable joints with a porous interconnection layer. A function for the self-healing of cracks in sintered porous Ag interlayers at high temperatures is discovered and reported here. A crack which was prepared on a Ag joining layer was closed after heating at 200 °C in air. The tensile strength of pre-cracked Ag joining layer specimens recovers to the value of non-cracked specimens after heating treatment. Transmission electron microscopy (TEM) was used to probe the self-healing mechanism. TEM images and electron diffraction patterns show that a large quantity of Ag nanoparticles formed at the gap with the size less than 10 nm, which bridges the crack in the self-healing process. This discovery provides additional motivation for the application of Ag as an interconnection material for power devices at high temperature.

  2. Charge transfer devices and their application in physics

    Energy Technology Data Exchange (ETDEWEB)

    Soroko, L M [Joint Inst. for Nuclear Research, Dubna (USSR)

    1979-01-01

    Physical properties and technical specifications of charge transfer devices (CTD) are reviewed. The CTD are semiconductor devices based on silicon single crystals. The limiting charge density of the CTD, their efficiency of charge transfer, the background noise and radiation effects are considered. Fast response and low energy consumption are characteristic features of the devices. The application of the CTD in storage devices, real time spectral data processing systems and in streamer chambers is described. The algorithms of topological transformations in the stage of scanning particle track images, which can be realized with the help of the CTD are shortly considered. It is pointed out that applications of the CTD in different fields of science and technology are numerous and expanding.

  3. Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping.

    Science.gov (United States)

    Ko, Seungpil; Na, Junhong; Moon, Young-Sun; Zschieschang, Ute; Acharya, Rachana; Klauk, Hagen; Kim, Gyu-Tae; Burghard, Marko; Kern, Klaus

    2017-12-13

    Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe 2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al 2 O 3 layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W -1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials.

  4. On the Fundamental Mode Love Wave in Devices Incorporating Thick Viscoelastic Layers

    International Nuclear Information System (INIS)

    Liu Jian-Sheng; Wang Li-Jun; He Shi-Tang

    2015-01-01

    A detailed investigation is presented for Love waves (LWs) with thick viscoelastic guiding layers. A theoretical calculation and an experiment are carried out for LW devices incorporating an SU-8 guiding layer, an ST-90° X quartz substrate and two 28-μm periodic interdigital transducers. Both the calculated and the measured results show an increase in propagation velocity when h/λ > 0.05. The measured insertion loss of LWs is consistent with the calculated propagation loss. The insertion loss of bulk waves is also measured and is compared with that of LWs. (paper)

  5. Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device

    Science.gov (United States)

    Nakajima, Ryo; Azuma, Atsushi; Yoshida, Hayato; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso

    2018-06-01

    Resistive random access memory (ReRAM) devices with a HfO2 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. Furthermore, it was reported that a thin Hf layer next to a HfO2 layer stabilized switching properties because of the oxygen scavenging effect. In this work, we studied the Hf thickness dependence of the resistance switching characteristics of a Ti/Hf/HfO2/Au ReRAM device. It is found that the optimum Hf thickness is approximately 10 nm to obtain good reproducibility of SET/RESET voltages with a small RESET current. However, when the Hf thickness was very small (∼2 nm), the device failed after the first RESET process owing to the very large RESET current. In the case of a very thick Hf layer (∼20 nm), RESET did not occur owing to the formation of a leaky dielectric layer. We observed the occurrence of multiple resistance states in the RESET process of the device with a Hf thickness of 10 nm by increasing the RESET voltage stepwise.

  6. Physical models of semiconductor quantum devices

    CERN Document Server

    Fu, Ying

    2013-01-01

    The science and technology relating to nanostructures continues to receive significant attention for its applications to various fields including microelectronics, nanophotonics, and biotechnology. This book describes the basic quantum mechanical principles underlining this fast developing field. From the fundamental principles of quantum mechanics to nanomaterial properties, from device physics to research and development of new systems, this title is aimed at undergraduates, graduates, postgraduates, and researchers.

  7. The effect of donor layer thickness on the power conversion efficiency of organic photovoltaic devices fabricated with a double small-molecular layer

    International Nuclear Information System (INIS)

    Lee, Su-Hwan; Kim, Dal-Ho; Shim, Tae-Hun; Park, Jea-Gun

    2009-01-01

    In organic photovoltaic (OPV) devices fabricated with a double small-molecular layer, the power conversion efficiency strongly depends on the thickness of the organic donor layer (here, copper phthalocyanine). In other words, the power conversion efficiency increases with the donor layer thickness up to a specific thickness (∼12.7 nm) and then decreases beyond that thickness. This trend is associated with the light absorption and carrier transport resistance of the small-molecular donor layer, both of which strongly depend on the layer thickness. Experimental and calculated results showed that the short-circuit current due to light absorption increased with the donor layer thickness, while that due to current through the donor layer decreased with 1/R. Since the total short-circuit current is the product of the light absorption current and current through the donor layer, there is a trade-off, and the maximum power conversion efficiency occurs at a specific organic donor layer thickness (e.g. ∼12.7 nm in this experiment).

  8. Efficient white organic light-emitting devices using a thin 4,4'-bis(2,2'-diphenylvinyl)-1,1'-diphenyl layer

    International Nuclear Information System (INIS)

    Wang Jun; Yu Junsheng; Li Lu; Tang Xiaoqing; Jiang Yadong

    2008-01-01

    White organic light-emitting devices (OLEDs) were fabricated using phosphorescent material bis[2-(4-tert-butylphenyl)benzothiazolato-N,C 2' ]iridium (acetylacetonate) [(t-bt) 2 Ir(acac)] doped in 4,4'-bis(carbazol-9-yl) biphenyl (CBP) matrix as a yellow light-emitting layer and a thin layer 4,4'-bis(2,2'-diphenylvinyl)-1,1'-diphenyl (DPVBi) as the blue light-emitting layer. The light colour of the OLEDs can be adjusted by changing doped concentration and the thickness of the DPVBi thin layer. The maximum luminance and power efficiency of 5% doped device reached 15 460 cd m -2 and 8.1 lm W -1 , respectively. The 3% doped device showed the CIE coordinates of (0.344, 0.322) at 8 V and a maximum power efficiency of 5.7 lm W -1 at 4.5 V

  9. Release strategies for making transferable semiconductor structures, devices and device components

    Science.gov (United States)

    Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

    2014-11-25

    Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  10. Low-temperature atomic layer deposition of TiO2 thin layers for the processing of memristive devices

    International Nuclear Information System (INIS)

    Porro, Samuele; Conti, Daniele; Guastella, Salvatore; Ricciardi, Carlo; Jasmin, Alladin; Pirri, Candido F.; Bejtka, Katarzyna; Perrone, Denis; Chiolerio, Alessandro

    2016-01-01

    Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO 2 thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such as self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO 2 thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO 2 thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switching behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications

  11. Mobile Augmented Note-taking to Support Operating Physical Devices

    OpenAIRE

    Liu , Can; Diehl , Jonathan; Huot , Stéphane; Borchers , Jan

    2011-01-01

    Mobile Augmented Reality: Design Issues and Opportunities - 1st Workshop on Mobile Augmented Reality, MobileHCI 2011; In this paper we propose an approach to assist operating physical devices with mobile augmented reality techniques. We propose ideas of interaction techniques, which allow users to put self-authored information as notes onto physical objects. We present the design of two example applications aiming at solving problems from different aspects of physical operations.

  12. Development of a physical and electronic model for RuO 2 nanorod rectenna devices

    Science.gov (United States)

    Dao, Justin

    Ruthenium oxide (RuO2) nanorods are an emergent technology in nanostructure devices. As the physical size of electronics approaches a critical lower limit, alternative solutions to further device miniaturization are currently under investigation. Thin-film nanorod growth is an interesting technology, being investigated for use in wireless communications, sensor systems, and alternative energy applications. In this investigation, self-assembled RuO2 nanorods are grown on a variety of substrates via a high density plasma, reactive sputtering process. Nanorods have been found to grow on substrates that form native oxide layers when exposed to air, namely silicon, aluminum, and titanium. Samples were analyzed with Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) techniques. Conductive Atomic Force Microscopy (C-AFM) measurements were performed on single nanorods to characterize structure and electrical conductivity. The C-AFM probe tip is placed on a single nanorod and I-V characteristics are measured, potentially exhibiting rectifying capabilities. An analysis of these results using fundamental semiconductor physics principles is presented. Experimental data for silicon substrates was most closely approximated by the Simmons model for direct electron tunneling, whereas that of aluminum substrates was well approximated by Fowler-Nordheim tunneling. The native oxide of titanium is regarded as a semiconductor rather than an insulator and its ability to function as a rectifier is not strong. An electronic model for these nanorods is described herein.

  13. Color-stable and efficient tandem white organic light-emitting devices using a LiF n-doping layer and a MoO{sub x} p-doping layer as charge generating unit

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yu; Wu, Qingyang; Zhang, Zhensong; Yue, Shouzhen; Guo, Runda; Wang, Peng; Wu, Mingzhu; Gou, Changhua; Zhao, Yi, E-mail: yizhao@jlu.edu.cn; Liu, Shiyong

    2013-10-31

    We have demonstrated color-stable and efficient tandem organic light-emitting devices (OLEDs) using 4,7-diphenyl-1,10-phenanthroline (Bphen):LiF/4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine (m-MTDATA):molybdenum oxide (MoO{sub x}) as charge generating unit (CGU), which has the advantages of air stability and ease of fabrication; the working mechanism of Bphen:LiF/m-MTDATA:MoO{sub x} is also discussed through analysis of the electrical and spectral emission properties of tandem devices with different CGUs. The performance of tandem white OLED, comprising blue and yellow phosphorescent EL units, can be improved by optimizing the thickness of Bphen:LiF layer. The device comprised of 30 nm Bphen:LiF layer has a maximum current efficiency of 38.7 cd/A and it can still maintain 24.6 cd/A at the luminance of 10,370 cd/m{sup 2}. Moreover, the Commission Internationale de L'Eclairage (CIE) coordinates of the device are rather stable and the variation is only (± 0.003, ± 0.007) over a wide range of luminance (100–13,000 cd/m{sup 2}). - Highlights: • LiF n-doping layer and MoO{sub x} p-doping layer were used as charge generating units. • The device performance was improved by optimizing the thickness of n-doping layer. • High luminance and efficiency were both achieved at a very low current density. • The device showed rather stable spectra over a wide range of luminance.

  14. Feasibility test on green energy harvesting from physical exercise devices

    Science.gov (United States)

    Mustafi, Nirendra N.; Mourshed, M.; Masud, M. H.; Hossain, M. S.; Kamal, M. R.

    2017-06-01

    The demand of power is increasing day by day due to the increase of world population as well as the industrialization and modernization. Depletion of the world's fossil fuel reserves and the adverse effects of their uses on the environment insist the researchers to find out some means of efficient and cost effective alternative energy sources from small to large scales. In a gymnasium the human metabolism power is used to drive the physical exercise devices. However there are a number of exercise device which can have the potential to generate electricity during physical exercise. By converting the available mechanical energy from these exercise devices into kinetic energy, electric power can be produced. In this work, energy was harvested from the most commonly used physical exercise devices used in the gymnasium - paddling and chin up. The paddle pulley and the chin up pulley were connected to the couple pulley which in turn coupled to an alternator by a V-belt to produce electrical energy and a rechargeable battery was used to store electrical energy. The power generation from the device depends upon the speed at which the alternator runs and the age limit. The electrical energy output was observed 83.6 watt at 1300 rpm and 62.5 watt at1150 rpm alternator speed for the paddling and chin up respectively recorded for an average adult. The device was designed for a constant 49N load on the alternator for both paddling and chin up operation. By running each of these devices for about 12 hours in a day, any gymnasium can avoid burning of almost 23.67 kg and 31.6 kg of diesel fuel per year for chin up and paddling respectively. Also it can cut off the CO2 emission to the environment which reveals itself a standalone green micro gym.

  15. Electrodeposition and Properties of Copper Layer on NdFeB Device

    Directory of Open Access Journals (Sweden)

    LI Yue

    2017-06-01

    Full Text Available To decrease the impact of the regular Ni/Cu/Ni coating on the magnetic performance of sintered NdFeB device, alkaline system of HEDP complexing agent was applied to directly electro-deposit copper layer on NdFeB matrix, then nickel layer was electrodeposited on the copper layer and Cu/Ni coating was finally obtained to replace the regular Ni/Cu/Ni coating. The influence of concentration of HEDP complexing agent on deposition course was tested by electrochemical testing; morphology of copper layer was characterized by SEM, XRD and TEM; the binding force of copper layer and the thermal reduction of magnetic of NdFeB caused by electrodeposited coating were respectively explored through the thermal cycle test and thermal demagnetization test. The results show that the concentration of HEDP has great impact on the deposition overpotential of copper. In the initial electrodepositing stage, copper particles precipitate at the grain boundaries of NdFeB magnets with a preferred (111 orientation. The copper layer is compact and has enough binding force with the NdFeB matrix to meet the requirements in SJ 1282-1977. Furthermore, the thermal demagnetization loss rate of the sintered NdFeB with the protection of Cu/Ni coating is significantly less than that with the protection of Ni/Cu/Ni coating.

  16. Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers

    Science.gov (United States)

    Chung, Jae-Moon; Zhang, Xiaokun; Shang, Fei; Kim, Ji-Hoon; Wang, Xiao-Lin; Liu, Shuai; Yang, Baoguo; Xiang, Yong

    2018-05-01

    To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility on 8.5th generation glass substrates (2200 mm × 2500 mm). Compared with a-IGZO-based TFT with back-channel-etched (BCE) structure, a newly formed ES nano-layer ( 100 nm) and a simultaneous etching of a-IGZO nano-layer (30 nm) and source-drain electrode layer are firstly introduced to a-IGZO-based TFT device with CL-ES structure to improve the uniformity and stability of device for large-area display. The saturation electron mobility of 8.05 cm2/V s and the V th uniformity of 0.72 V are realized on the a-IGZO-based TFT device with CL-ES structure. In the negative bias temperature illumination stress and positive bias thermal stress reliability testing under a ± 30 V bias for 3600 s, the measured V th shift of CL-ES-structured device significantly decreased to - 0.51 and + 1.94 V, which are much lower than that of BCE-structured device (- 3.88 V, + 5.58 V). The electrical performance of the a-IGZO-based TFT device with CL-ES structure implies that the economic transfer from a silicon-based TFT process to the metal oxide semiconductor-based process for LCD fabrication is highly feasible.

  17. Efficient white organic light emitting devices with dual emitting layers

    Energy Technology Data Exchange (ETDEWEB)

    Wu Yaoshan [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Hwang Shiaowen [Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China)]. E-mail: jesse@faculty.nctu.edu.tw; Chen Hsianhung [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Lee Mengting [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Shen Wenjian [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Chen, C.H. [Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China)

    2005-09-22

    In this paper, a new white organic light-emitting device (OLED) with the structure of indium tin oxide / CF {sub x} / 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-biphenyl (NPB) (30 nm)/NPB: 2,8-di(t-butyl)-5,11-di[4-(t-butyl)phenyl]-6,12-diphenylnaphthacene (20 nm; 1.6 %) / 2-methyl-9,10-di(2-naphthyl) anthracene: p-bis(p-N,N-di-phenyl-aminostyryl)benzene (40 nm, 3%) / aluminum tris(8-hydroxyquinoline) (20 nm) / LiF (1 nm) / Al (200 nm) has been investigated. The device showed white emission with a high-luminous yield of 9.75 cd/A at 20 mA/cm{sup 2}, but its Commission Internationale de l'Eclairage chromaticity coordinates appeared to change from (0.34, 0.42) at 6 mA/cm2 to (0.27, 0.37) at 200 mA/cm{sup 2} due to the shift of recombination zone. The change of color with drive current was suppressed by introduction of an electron-blocking layer of NPB along with a hole-blocking layer of aluminum (III) bis(2-methyl-8-quinolinato)4-phenylphenolato to the white OLED which successfully confined the recombination site and achieved a luminous yield of 9.9 cd/A at 20 mA/cm{sup 2}.

  18. Computational simulation of biomolecules transport with multi-physics near microchannel surface for development of biomolecules-detection devices.

    Science.gov (United States)

    Suzuki, Yuma; Shimizu, Tetsuhide; Yang, Ming

    2017-01-01

    The quantitative evaluation of the biomolecules transport with multi-physics in nano/micro scale is demanded in order to optimize the design of microfluidics device for the biomolecules detection with high detection sensitivity and rapid diagnosis. This paper aimed to investigate the effectivity of the computational simulation using the numerical model of the biomolecules transport with multi-physics near a microchannel surface on the development of biomolecules-detection devices. The biomolecules transport with fluid drag force, electric double layer (EDL) force, and van der Waals force was modeled by Newtonian Equation of motion. The model validity was verified in the influence of ion strength and flow velocity on biomolecules distribution near the surface compared with experimental results of previous studies. The influence of acting forces on its distribution near the surface was investigated by the simulation. The trend of its distribution to ion strength and flow velocity was agreement with the experimental result by the combination of all acting forces. Furthermore, EDL force dominantly influenced its distribution near its surface compared with fluid drag force except for the case of high velocity and low ion strength. The knowledges from the simulation might be useful for the design of biomolecules-detection devices and the simulation can be expected to be applied on its development as the design tool for high detection sensitivity and rapid diagnosis in the future.

  19. Device characteristics of organic light-emitting diodes based on electronic structure of the Ba-doped Alq3 layer.

    Science.gov (United States)

    Lim, Jong Tae; Kim, Kyung Nam; Yeom, Geun Young

    2009-12-01

    Organic light-emitting diodes (OLEDs) with a Ba-doped tris(8-quinolinolato)aluminum(III) (Alq3) layer were fabricated to reduce the barrier height for electron injection and to improve the electron conductivity. In the OLED consisting of glass/ITO/4,4',4"-tris[2-naphthylphenyl-1-phenylamino]triphenylamine (2-TNATA, 30 nm)/4,4'-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB, 18 nm)/Alq3 (42 nm)/Ba-doped Alq3 (20 nm, x%: x = 0, 10, 25, and 50)/Al (100 nm), the device with the Alq3 layer doped with 10% Ba showed the highest light out-coupling characteristic. However, as the Ba dopant concentration was increased from 25% to 50%, this device characteristic was largely reduced. The characteristics of these devices were interpreted on the basis of the chemical reaction between Ba and Alq3 and the electron injection property by analyzing the electronic structure of the Ba-doped Alq3 layer. At a low Ba doping of 10%, mainly the Alq3 radical anion species was formed. In addition, the barrier height for electron injection in this layer was decreased to 0.6 eV, when compared to the pristine Alq3 layer. At a high Ba doping of 50%, the Alq3 molecules were severely decomposed. When the Ba dopant concentration was changed, the light-emitting characteristics of the devices were well coincided with the formation mechanism of Alq3 radical anion and Alq3 decomposition species.

  20. The effect of the thicknesses of the various layers on the colour emitted by an organic electroluminescent device

    Science.gov (United States)

    Jolinat, P.; Clergereaux, R.; Farenc, J.; Destruel, P.

    1998-05-01

    Organic electroluminescent diodes based on thin organic layers are one of the most promising next-generation systems for the backlighting of the liquid crystal screens. Among other methods to obtain white light, three-layer luminescent devices with each layer emitting one of the three fundamental colours have been studied here. Red, green and blue light were produced by 0022-3727/31/10/018/img1 doped with Nile red, 0022-3727/31/10/018/img1 and TPD layers respectively. A fourth thin film of TAZ has been inserted between TPD and 0022-3727/31/10/018/img1 to control injection of electrons into the TPD. The effect of the layers' thicknesses on the spectral emission of the device has been examined. Results show that the thicknesses of TAZ and doped 0022-3727/31/10/018/img1 layers have to be controlled to within a precision of better than 5 Å. The discussion turns on the possibility of applying this technology to screen backlighting.

  1. Development of Enhanced Window layers for CIGS Photovoltaic Devices

    Science.gov (United States)

    Alexander, J. Nicholas

    One of the most promising thin film devices right now is the Copper Indium Gallium Selenide (CIGS) solar cell with maximum reported power conversion efficiency of 22.3%. The Transparent Conducting Oxide (TCO) which is the top layer of the CIGS device also known as the window layer, is responsible for collecting the electrons generated in the CIGS device and conducting them to the circuit. Development of a very low resistivity film with a high optical transmission is crucial for optimal performance of devices as well as the ability to be deployed without changes to their properties for several decades. Current TCOs such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) are met with limitations with either using large amounts of expensive materials such as indium, often requiring and anneal step to obtain good conductivity, or have shown poor long term reliability. This thesis is focused on development of InZnO and zirconium doped InZnO as a potential replacement TCO to obtain high conductivity and high transmission like the leading TCOs without needing heated depositions, post deposition annealing, and maintain a good film reliability. Zirconium doping was employed to farther enhance both the optical and electrical properties through enhancement of the films high frequency permittivity of InZnO while providing improved reliability to the film. The films were grown through a mix of DC and RF co-sputtering. InZnO films were deposited at varying indium concentration ( 10-30%) and samples were able to achieve low resistivity ( 7x10-4 O-cm), high mobility (>30 cm2/v.s), high carrier concentration (>10 20 cm-3), while maintaining high transmission (> 80%) in the visible and near-infrared region. After zirconium was incorporated into the InZnO films by replacement of the ZnO target with a ZrO2/ZnO (5:95) target, films of Zr:InZnO were deposit through the same method to achieve films that maintained very similar electrical and optical properties. The little

  2. The Physics of Semiconductors An Introduction Including Devices and Nanophysics

    CERN Document Server

    Grundmann, Marius

    2006-01-01

    The Physics of Semiconductors provides material for a comprehensive upper-level-undergrauate and graduate course on the subject, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. For the interested reader some additional advanced topics are included, such as Bragg mirrors, resonators, polarized and magnetic semiconductors are included. Also supplied are explicit formulas for many results, to support better understanding. The Physics of Semiconductors requires little or no prior knowledge of solid-state physics and evolved from ...

  3. [Performance dependence of organic light-emitting devices on the thickness of Alq3 emitting layer].

    Science.gov (United States)

    Lian, Jia-rong; Liao, Qiao-sheng; Yang, Rui-bo; Zheng, Wei; Zeng, Peng-ju

    2010-10-01

    The dependence of opto-electronical characteristics in organic light-emitting devices on the thickness of Alq3 emitter layer was studied, where MoO3, NPB, and Alq3 were used as hole injector, hole transporter, and emitter/electron transporter, respectively. By increasing the thickness of Alq3 layer from 20 to 100 nm, the device current decreased gradually, and the EL spectra of devices performed a little red shift with an obvious broadening in long wavelength range but a little decrease in intensity of short wavelength range. The authors simulated the EL spectra using the photoluminescence (PL) spectra of Alq3 as Alq3 intrinsic emission, which coincided with the experimental EL spectra well. The simulated results suggested that the effect of interference takes the major role in broadening the long wavelength range of EL spectra, and the distribution of emission zone largely affects the profile of EL spectra in short wavelength range.

  4. High-performance alternating current field-induced chromatic-stable white polymer electroluminescent devices employing a down-conversion layer

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Yingdong; Chen, Yonghua; Smith, Gregory M. [Center for Nanotechnology and Molecular Materials, Department of Physics, Wake Forest University, Winston-Salem, NC 27105 (United States); Sun, Hengda; Yang, Dezhi [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Nie, Wanyi; Li, Yuan; Huang, Wenxiao [Center for Nanotechnology and Molecular Materials, Department of Physics, Wake Forest University, Winston-Salem, NC 27105 (United States); Ma, Dongge [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Carroll, David L., E-mail: carroldl@wfu.edu [Center for Nanotechnology and Molecular Materials, Department of Physics, Wake Forest University, Winston-Salem, NC 27105 (United States)

    2015-05-15

    In this work, a high-performance alternating current (AC) filed-induced chromatic-stable white polymer electroluminescence (WFIPEL) device was fabricated by combining a fluorophor Poly(9,9-dioctylfluorene) (PFO)-based blue device with a yellow down-conversion layer (YAG:Ce). A maximum luminance of this down-conversion FIPEL device achieves 3230 cd m{sup −2}, which is 1.41 times higher than the device without the down-conversion layer. A maximum current efficiency and power efficiency of the down-conversion WFIPEL device reach 19.7 cd A{sup −1} at 3050 cd m{sup −2} and 5.37 lm W{sup −1} at 2310 cd m{sup −2} respectively. To the best of our knowledge, the power efficiency is one of the highest reports for the WFIPEL up to now. Moreover, Commison Internationale de L’Eclairage (CIE) coordinates of (0.28, 0.30) is obtained by adjusting the thickness of the down-conversion layer to 30 μm and it is kept stable over the entire AC-driven voltage range. We believe that this AC-driven, down-conversion, WFIPEL device may offer an easy way towards future flat and flexible lighting sources. - Highlights: • A high-performance AC filed-induced chromatic-stable white polymer electroluminescence (WFIPEL) device was fabricated. • A maximum luminance, current efficiency, and power efficiency achieves 3230 cd m{sup −2}, 19.7 cd A{sup −1}, and 5.37 lm W{sup −1}, respectively. • The power efficiency is one of the highest reports for the WFIPEL up to now. • The EL spectrum kept very stable over the entire AC-driven voltage range.

  5. A Novel Physical Layer Assisted Authentication Scheme for Mobile Wireless Sensor Networks

    Directory of Open Access Journals (Sweden)

    Qiuhua Wang

    2017-02-01

    Full Text Available Physical-layer authentication can address physical layer vulnerabilities and security threats in wireless sensor networks, and has been considered as an effective complementary enhancement to existing upper-layer authentication mechanisms. In this paper, to advance the existing research and improve the authentication performance, we propose a novel physical layer assisted authentication scheme for mobile wireless sensor networks. In our proposed scheme, we explore the reciprocity and spatial uncorrelation of the wireless channel to verify the identities of involved transmitting users and decide whether all data frames are from the same sender. In our proposed scheme, a new method is developed for the legitimate users to compare their received signal strength (RSS records, which avoids the information from being disclosed to the adversary. Our proposed scheme can detect the spoofing attack even in a high dynamic environment. We evaluate our scheme through experiments under indoor and outdoor environments. Experiment results show that our proposed scheme is more efficient and achieves a higher detection rate as well as keeping a lower false alarm rate.

  6. A Novel Physical Layer Assisted Authentication Scheme for Mobile Wireless Sensor Networks.

    Science.gov (United States)

    Wang, Qiuhua

    2017-02-04

    Physical-layer authentication can address physical layer vulnerabilities and security threats in wireless sensor networks, and has been considered as an effective complementary enhancement to existing upper-layer authentication mechanisms. In this paper, to advance the existing research and improve the authentication performance, we propose a novel physical layer assisted authentication scheme for mobile wireless sensor networks. In our proposed scheme, we explore the reciprocity and spatial uncorrelation of the wireless channel to verify the identities of involved transmitting users and decide whether all data frames are from the same sender. In our proposed scheme, a new method is developed for the legitimate users to compare their received signal strength (RSS) records, which avoids the information from being disclosed to the adversary. Our proposed scheme can detect the spoofing attack even in a high dynamic environment. We evaluate our scheme through experiments under indoor and outdoor environments. Experiment results show that our proposed scheme is more efficient and achieves a higher detection rate as well as keeping a lower false alarm rate.

  7. Wireless Physical Layer Security with CSIT Uncertainty

    KAUST Repository

    Hyadi, Amal

    2017-09-01

    Recent years have been marked by an enormous growth of wireless communication networks and an extensive use of wireless applications. In return, this phenomenal expansion induced more concerns about the privacy and the security of the users. Physical layer security is one of the most promising solutions that were proposed to enhance the security of next generation wireless systems. The fundamental idea behind this technique is to exploit the randomness and the fluctuations of the wireless channel to achieve security without conditional assumptions on the computational capabilities of the eavesdropper. In fact, while these elements have traditionally been associated with signal deterioration, physical layer security uses them to ensure the confidentiality of the users. Nevertheless, these technical virtues rely heavily on perhaps idealistic channel state information assumptions. In that regard, the aim of this thesis is to look at the physical layer security paradigm from the channel uncertainty perspective. In particular, we discuss the ergodic secrecy capacity of different wiretap channels when the transmitter is hampered by the imperfect knowledge of the channel state information (CSI). We consider two prevalent causes of uncertainty for the CSI at transmitter (CSIT); either an error of estimation occurs at the transmitter and he can only base his coding and the transmission strategies on a noisy version of the CSI, or the CSI feedback link has a limited capacity and the legitimate receivers can only inform the transmitter about the quantized CSI. We investigate both the single-user multiple-input multiple-output (MIMO) wiretap channel and the multi-user broadcast wiretap channel. In the latter scenario, we distinguish between two situations: multiple messages transmission and common message transmission. We also discuss the broadcast channel with confidential messages (BCCM) where the transmitter has one common message to be transmitted to two users and one

  8. Insertion of a pentacene layer into the gold/poly(methyl methacrylate)/heavily doped p-type Si/indium device leading to the modulation of resistive switching characteristics

    Science.gov (United States)

    Hung, Cheng-Chun; Lin, Yow-Jon

    2018-01-01

    In order to get a physical insight into the pentacene interlayer-modulated resistive switching (RS) characteristics, the Au/pentacene/poly(methyl methacrylate) (PMMA)/heavily doped p-type Si (p+-Si)/In and Au/PMMA/p+-Si/In devices are fabricated and the device performance is provided. The Au/pentacene/PMMA/p+-Si/In device shows RS behavior, whereas the Au/PMMA/p+-Si/In device exhibits the set/reset-free hysteresis current-voltage characteristics. The insertion of a pentacene layer is a noticeable contribution to the RS characteristic. This is because of the occurrence of carrier accumulation/depletion in the pentacene interlayer. The transition from carrier depletion to carrier accumulation (carrier accumulation to carrier depletion) in pentacene occurring under negative (positive) voltage induces the process of set (reset). The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The concept of a pentacene/PMMA heterostructure opens a promising direction for organic memory devices.

  9. Physical Modeling of the Polyfrequency Filter-Compensating Device Based on the Capacitor-Coil

    Science.gov (United States)

    Butyrin, P. A.; Gusev, G. G.; Mikheev, D. V.; Shakirzianov, F. N.

    2017-12-01

    The paper presents the results of physical modeling and experimental study of the frequency characteristics of the polyfrequency filter-compensating device (PFCD) based on a capacitor-coil. The amplitude- frequency and phase-frequency characteristics of the physical PFCD model were constructed and its equivalent parameters were identified. The feasibility of a PFCD in the form of a single technical device with high technical and economic characteristics was experimentally proven. In the paper, recommendations for practical applications of the capacitor-coil-based PFCD are made and the advantages of the device over known standard passive filter-compensating devices are evaluated.

  10. Temperature stable LiNbO3 surface acoustic wave device with diode sputtered amorphous TeO2 over-layer

    International Nuclear Information System (INIS)

    Dewan, Namrata; Tomar, Monika; Gupta, Vinay; Sreenivas, K.

    2005-01-01

    Amorphous TeO 2 thin film, sputtered in the O 2 +Ar(25%+75%) gas environment using a metallic tellurium target, has been identified as an attractive negative temperature coefficient of delay (TCD) material that can yield a temperature stable device when combined with a surface acoustic wave (SAW) device based on positive TCD material such as LiNbO 3 . The influence of amorphous TeO 2 over-layer on the SAW propagation characteristics (velocity and temperature coefficient of delay) of the SAW filters (36 and 70 MHz) based on 128 deg. rotated Y-cut X-propagating lithium niobate (128 deg. Y-X LiNbO 3 ) single crystal has been studied. It is found that 0.042 λ thick TeO 2 over-layer on a prefabricated SAW device operating at 36 MHz centre frequency, reduces the TCD of the device from 76 ppm deg. C -1 to almost zero (∼1.4 ppm deg. C -1 ) without deteriorating its efficiency and could be considered as a suitable alternative for temperature stable devices in comparison to conventional SiO 2 over-layer

  11. Nanoscale device physics science and engineering fundamentals

    CERN Document Server

    Tiwari, Sandip

    2017-01-01

    Nanoscale devices are distinguishable from the larger microscale devices in their specific dependence on physical phenomena and effects that are central to their operation. The size change manifests itself through changes in importance of the phenomena and effects that become dominant and the changes in scale of underlying energetics and response. Examples of these include classical effects such as single electron effects, quantum effects such as the states accessible as well as their properties; ensemble effects ranging from consequences of the laws of numbers to changes in properties arising from different magnitudes of the inter-actions, and others. These interactions, with the limits placed on size, make not just electronic, but also magnetic, optical and mechanical behavior interesting, important and useful. Connecting these properties to the behavior of devices is the focus of this textbook. Description of the book series: This collection of four textbooks in the Electroscience series span the undergrad...

  12. Design and Study of Cognitive Network Physical Layer Simulation Platform

    Directory of Open Access Journals (Sweden)

    Yongli An

    2014-01-01

    Full Text Available Cognitive radio technology has received wide attention for its ability to sense and use idle frequency. IEEE 802.22 WRAN, the first to follow the standard in cognitive radio technology, is featured by spectrum sensing and wireless data transmission. As far as wireless transmission is concerned, the availability and implementation of a mature and robust physical layer algorithm are essential to high performance. For the physical layer of WRAN using OFDMA technology, this paper proposes a synchronization algorithm and at the same time provides a public platform for the improvement and verification of that new algorithm. The simulation results show that the performance of the platform is highly close to the theoretical value.

  13. Physical mechanisms of SiNx layer structuring with ultrafast lasers by direct and confined laser ablation

    International Nuclear Information System (INIS)

    Rapp, S.; Heinrich, G.; Wollgarten, M.; Huber, H. P.; Schmidt, M.

    2015-01-01

    In the production process of silicon microelectronic devices and high efficiency silicon solar cells, local contact openings in thin dielectric layers are required. Instead of photolithography, these openings can be selectively structured with ultra-short laser pulses by confined laser ablation in a fast and efficient lift off production step. Thereby, the ultrafast laser pulse is transmitted by the dielectric layer and absorbed at the substrate surface leading to a selective layer removal in the nanosecond time domain. Thermal damage in the substrate due to absorption is an unwanted side effect. The aim of this work is to obtain a deeper understanding of the physical laser-material interaction with the goal of finding a damage-free ablation mechanism. For this, thin silicon nitride (SiN x ) layers on planar silicon (Si) wafers are processed with infrared fs-laser pulses. Two ablation types can be distinguished: The known confined ablation at fluences below 300 mJ/cm 2 and a combined partial confined and partial direct ablation at higher fluences. The partial direct ablation process is caused by nonlinear absorption in the SiN x layer in the center of the applied Gaussian shaped laser pulses. Pump-probe investigations of the central area show ultra-fast reflectivity changes typical for direct laser ablation. Transmission electron microscopy results demonstrate that the Si surface under the remaining SiN x island is not damaged by the laser ablation process. At optimized process parameters, the method of direct laser ablation could be a good candidate for damage-free selective structuring of dielectric layers on absorbing substrates

  14. Double-Layer Structured CO2 Adsorbent Functionalized with Modified Polyethyleneimine for High Physical and Chemical Stability.

    Science.gov (United States)

    Jeon, Sunbin; Jung, Hyunchul; Kim, Sung Hyun; Lee, Ki Bong

    2018-06-18

    CO 2 capture using polyethyleneimine (PEI)-impregnated silica adsorbents has been receiving a lot of attention. However, the absence of physical stability (evaporation and leaching of amine) and chemical stability (urea formation) of the PEI-impregnated silica adsorbent has been generally established. Therefore, in this study, a double-layer impregnated structure, developed using modified PEI, is newly proposed to enhance the physical and chemical stabilities of the adsorbent. Epoxy-modified PEI and diepoxide-cross-linked PEI were impregnated via a dry impregnation method in the first and second layers, respectively. The physical stability of the double-layer structured adsorbent was noticeably enhanced when compared to the conventional adsorbents with a single layer. In addition to the enhanced physical stability, the result of simulated temperature swing adsorption cycles revealed that the double-layer structured adsorbent presented a high potential working capacity (3.5 mmol/g) and less urea formation under CO 2 -rich regeneration conditions. The enhanced physical and chemical stabilities as well as the high CO 2 working capacity of the double-layer structured adsorbent were mainly attributed to the second layer consisting of diepoxide-cross-linked PEI.

  15. Polymer−metal organic framework composite films as affinity layer for capacitive sensor devices

    NARCIS (Netherlands)

    Sachdeva, S.; Gravesteijn, Dirk J; Soccol, D.; Kapteijn, F.; Sudhölter, E.J.R.; Gascon, J.; Smet, de L.C.P.M.

    2016-01-01

    We report a simple method for sensor development using polymer-MOF composite films. Nanoparticles of NH2-MIL-53(Al) dispersed in a Matrimid polyimide were applied as a thin film on top of capacitive sensor devices with planar electrodes. These drop-cast films act as an affinity layer. Sensing

  16. Polymer-metal organic framework composite films as affinity layer for capacitive sensor devices

    NARCIS (Netherlands)

    Sachdeva, Sumit; Soccol, Dimitri; Gravesteijn, Dirk J.; Kapteijn, Freek; Sudhölter, E.J.R.; Gascon, Jorge; Smet, de L.C.P.M.

    2016-01-01

    We report a simple method for sensor development using polymer-
    MOF composite films. Nanoparticles of NH2-MIL-53(Al) dispersed in a Matrimid
    polyimide were applied as a thin film on top of capacitive sensor devices with planar electrodes. These drop-cast films act as an affinity layer.

  17. Physical Layer Multi-Core Prototyping A Dataflow-Based Approach for LTE eNodeB

    CERN Document Server

    Pelcat, Maxime; Piat, Jonathan; Nezan, Jean-François

    2013-01-01

    Base stations developed according to the 3GPP Long Term Evolution (LTE) standard require unprecedented processing power. 3GPP LTE enables data rates beyond hundreds of Mbits/s by using advanced technologies, necessitating a highly complex LTE physical layer. The operating power of base stations is a significant cost for operators, and is currently optimized using state-of-the-art hardware solutions, such as heterogeneous distributed systems. The traditional system design method of porting algorithms to heterogeneous distributed systems based on test-and-refine methods is a manual, thus time-expensive, task.   Physical Layer Multi-Core Prototyping: A Dataflow-Based Approach for LTE eNodeB provides a clear introduction to the 3GPP LTE physical layer and to dataflow-based prototyping and programming. The difficulties in the process of 3GPP LTE physical layer porting are outlined, with particular focus on automatic partitioning and scheduling, load balancing and computation latency reduction, specifically in sys...

  18. Nanowire transistors physics of devices and materials in one dimension

    CERN Document Server

    Colinge, Jean-Pierre

    2016-01-01

    From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It includes a unified account of the critical ideas central to low-dimensional physics and transistor physics which equips readers with a common framework and language to accelerate scientific and technological developments across the two fields. Detailed descriptions of novel quantum mechanical effects such as quantum current oscillations, the metal-to-semiconductor transition and the transition from classical transistor to single-electron transistor operation are described in detail, in addition to real-world applications in the fields of nanoelectronics, biomedical sensing techniques, and advanced semiconductor research. Including numerous illustrations to help readers understand these phenomena, this is an essential resource for researchers and professional engineers working on semiconductor devices and materials in ...

  19. Influences on the white emission and stability of single layer electroluminescent devices

    International Nuclear Information System (INIS)

    Tekin, Emine

    2013-01-01

    A detailed survey about the influences on the white emission color of polyfluorene based polymer light emitting diodes (PLEDs) is reported. First, the effect of active layer thickness was studied. Subsequently keeping the polymer thickness at optimum level, PLEDs were fabricated varying polymer concentrations. All fabricated devices were fully characterized in terms of luminance, current–voltage characteristics, efficiencies, electroluminescent spectra, and CIE color coordinates. It was found that at higher polymer concentrations, electroluminescence spectra shifted to the bathochromic region so that the resulting color becomes warm white. Furthermore, the accelerated lifetimes of the PLEDs were measured and the results are discussed in terms of polymer inter-chain interactions. Consequently, the 8 mg/ml was found to be the optimum level not only for the device performances but also for the device lifetime. Highlights: • Influences on the white color emission of the polymer OLEDs were investigated. • White emission purity was found to be affected by the polymer concentration. • Lifetimes of the white emitting devices depend on the inter-chain interactions

  20. Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers.

    Science.gov (United States)

    Chung, Jae-Moon; Zhang, Xiaokun; Shang, Fei; Kim, Ji-Hoon; Wang, Xiao-Lin; Liu, Shuai; Yang, Baoguo; Xiang, Yong

    2018-05-29

    To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility on 8.5th generation glass substrates (2200 mm × 2500 mm). Compared with a-IGZO-based TFT with back-channel-etched (BCE) structure, a newly formed ES nano-layer (~ 100 nm) and a simultaneous etching of a-IGZO nano-layer (30 nm) and source-drain electrode layer are firstly introduced to a-IGZO-based TFT device with CL-ES structure to improve the uniformity and stability of device for large-area display. The saturation electron mobility of 8.05 cm 2 /V s and the V th uniformity of 0.72 V are realized on the a-IGZO-based TFT device with CL-ES structure. In the negative bias temperature illumination stress and positive bias thermal stress reliability testing under a ± 30 V bias for 3600 s, the measured V th shift of CL-ES-structured device significantly decreased to - 0.51 and + 1.94 V, which are much lower than that of BCE-structured device (- 3.88 V, + 5.58 V). The electrical performance of the a-IGZO-based TFT device with CL-ES structure implies that the economic transfer from a silicon-based TFT process to the metal oxide semiconductor-based process for LCD fabrication is highly feasible.

  1. The current-voltage characteristic and potential oscillations of a double layer in a triple plasma device

    International Nuclear Information System (INIS)

    Carpenter, R.T.; Torven, S.

    1986-07-01

    The properties of a strong double layer in a current circuit with a capacitance and an inductance are investigated in a triple plasma device. The double layer gives rise to a region of negative differential resistance in the current-voltage characteristic of the device, and this gives non-linear oscillations in the current and the potential drop over the double layer (PhiDL). For a sufficiently large circuit inductance PhiDL reaches an amplitude given by the induced voltage (-LdI/dt) which is much larger than the circuit EMF due to the rapid current decrease when PhiDL increases. A variable potential minimum exists in the plasma on the low potential side of the double layer, and the depth of the minimum increases when PhiDL increases. An increasing fraction of the electrons incident at the double layer are then reflected, and this is found to be the main process giving rise to the negative differential resistance. A qualitative model for the variation of the minimum potential with PhiDL is also proposed. It is based on the condition that the minimum potential must adjust itself self-consistentely so that quasi-neutrality is maintained in the plasma region where the minimum is assumed. (authors)

  2. Equivalent physical models and formulation of equivalent source layer in high-resolution EEG imaging

    International Nuclear Information System (INIS)

    Yao Dezhong; He Bin

    2003-01-01

    In high-resolution EEG imaging, both equivalent dipole layer (EDL) and equivalent charge layer (ECL) assumed to be located just above the cortical surface have been proposed as high-resolution imaging modalities or as intermediate steps to estimate the epicortical potential. Presented here are the equivalent physical models of these two equivalent source layers (ESL) which show that the strength of EDL is proportional to the surface potential of the layer when the outside of the layer is filled with an insulator, and that the strength of ECL is the normal current of the layer when the outside is filled with a perfect conductor. Based on these equivalent physical models, closed solutions of ECL and EDL corresponding to a dipole enclosed by a spherical layer are given. These results provide the theoretical basis of ESL applications in high-resolution EEG mapping

  3. Equivalent physical models and formulation of equivalent source layer in high-resolution EEG imaging

    Energy Technology Data Exchange (ETDEWEB)

    Yao Dezhong [School of Life Science and Technology, University of Electronic Science and Technology of China, Chengdu City, 610054, Sichuan Province (China); He Bin [The University of Illinois at Chicago, IL (United States)

    2003-11-07

    In high-resolution EEG imaging, both equivalent dipole layer (EDL) and equivalent charge layer (ECL) assumed to be located just above the cortical surface have been proposed as high-resolution imaging modalities or as intermediate steps to estimate the epicortical potential. Presented here are the equivalent physical models of these two equivalent source layers (ESL) which show that the strength of EDL is proportional to the surface potential of the layer when the outside of the layer is filled with an insulator, and that the strength of ECL is the normal current of the layer when the outside is filled with a perfect conductor. Based on these equivalent physical models, closed solutions of ECL and EDL corresponding to a dipole enclosed by a spherical layer are given. These results provide the theoretical basis of ESL applications in high-resolution EEG mapping.

  4. The Device-Independent Outlook On Quantum Physics

    International Nuclear Information System (INIS)

    Scarani, V.

    2012-01-01

    This text is an introduction to an operational outlook on Bell inequalities, which has been very fruitful in the past few years. It has lead to the recognition that Bell tests have their own place in applied quantum technologies, because they quantify non-classicality in a device-independent way, that is, without any need to describe the degrees of freedom under study and the measurements that are performed. At the more fundamental level, the same device-independent outlook has allowed the falsification of several other alternative models that could hope to reproduce the observed statistics while keeping some classical features that quantum theory denies; and it has shed new light on the long-standing quest for deriving quantum theory from physical principles. (author)

  5. Device model investigation of bilayer organic light emitting diodes

    International Nuclear Information System (INIS)

    Crone, B. K.; Davids, P. S.; Campbell, I. H.; Smith, D. L.

    2000-01-01

    Organic materials that have desirable luminescence properties, such as a favorable emission spectrum and high luminescence efficiency, are not necessarily suitable for single layer organic light-emitting diodes (LEDs) because the material may have unequal carrier mobilities or contact limited injection properties. As a result, single layer LEDs made from such organic materials are inefficient. In this article, we present device model calculations of single layer and bilayer organic LED characteristics that demonstrate the improvements in device performance that can occur in bilayer devices. We first consider an organic material where the mobilities of the electrons and holes are significantly different. The role of the bilayer structure in this case is to move the recombination away from the electrode that injects the low mobility carrier. We then consider an organic material with equal electron and hole mobilities but where it is not possible to make a good contact for one carrier type, say electrons. The role of a bilayer structure in this case is to prevent the holes from traversing the device without recombining. In both cases, single layer device limitations can be overcome by employing a two organic layer structure. The results are discussed using the calculated spatial variation of the carrier densities, electric field, and recombination rate density in the structures. (c) 2000 American Institute of Physics

  6. Thin-film encapsulation of organic electronic devices based on vacuum evaporated lithium fluoride as protective buffer layer

    Science.gov (United States)

    Peng, Yingquan; Ding, Sihan; Wen, Zhanwei; Xu, Sunan; Lv, Wenli; Xu, Ziqiang; Yang, Yuhuan; Wang, Ying; Wei, Yi; Tang, Ying

    2017-03-01

    Encapsulation is indispensable for organic thin-film electronic devices to ensure reliable operation and long-term stability. For thin-film encapsulating organic electronic devices, insulating polymers and inorganic metal oxides thin films are widely used. However, spin-coating of insulating polymers directly on organic electronic devices may destroy or introduce unwanted impurities in the underlying organic active layers. And also, sputtering of inorganic metal oxides may damage the underlying organic semiconductors. Here, we demonstrated that by utilizing vacuum evaporated lithium fluoride (LiF) as protective buffer layer, spin-coated insulating polymer polyvinyl alcohol (PVA), and sputtered inorganic material Er2O3, can be successfully applied for thin film encapsulation of copper phthalocyanine (CuPc)-based organic diodes. By encapsulating with LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films, the device lifetime improvements of 10 and 15 times can be achieved. These methods should be applicable for thin-film encapsulation of all kinds of organic electronic devices. Moisture-induced hole trapping, and Al top electrode oxidation are suggest to be the origins of current decay for the LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films encapsulated devices, respectively.

  7. Chemical bath deposited zinc sulfide buffer layers for copper indium gallium sulfur-selenide solar cells and device analysis

    International Nuclear Information System (INIS)

    Kundu, Sambhu; Olsen, Larry C.

    2005-01-01

    Cadmium-free copper indium gallium sulfur-selenide (CIGSS) thin film solar cells have been fabricated using chemical bath deposited (CBD) zinc sulfide (ZnS) buffer layers. Shell Solar Industries provided high quality CIGSS absorber layers. The use of CBD-ZnS, which is a higher band gap material than CdS, improved the quantum efficiency of fabricated cells at lower wavelengths, leading to an increase in short circuit current. The best cell to date yielded an active area (0.43 cm 2 ) efficiency of 13.3%. The effect of the ZnS buffer layer thickness on device performance was studied carefully. This paper also presents a discussion of issues relevant to the use of the CBD-ZnS buffer material for improving device performance

  8. Low-Cost and Green Fabrication of Polymer Electronic Devices by Push-Coating of the Polymer Active Layers.

    Science.gov (United States)

    Vohra, Varun; Mróz, Wojciech; Inaba, Shusei; Porzio, William; Giovanella, Umberto; Galeotti, Francesco

    2017-08-02

    Because of both its easy processability and compatibility with roll-to-roll processes, polymer electronics is considered to be the most promising technology for the future generation of low-cost electronic devices such as light-emitting diodes and solar cells. However, the state-of-the-art deposition technique for polymer electronics (spin-coating) generates a high volume of chlorinated solution wastes during the active layer fabrication. Here, we demonstrate that devices with similar or higher performances can be manufactured using the push-coating technique in which a poly(dimethylsiloxane) (PDMS) layer is simply laid over a very small amount of solution (less than 1μL/covered cm 2 ), which is then left for drying. Using mm thick PDMS provides a means to control the solvent diffusion kinetics (sorption/retention) and removes the necessity for additional applied pressure to generate the desired active layer thickness. Unlike spin-coating, push-coating is a slow drying process that induces a higher degree of crystallinity in the polymer thin film without the necessity for a post-annealing step. The polymer light-emitting diodes and solar cells prepared by push-coating exhibit slightly higher performances with respect to the reference spin-coated devices, whereas at the same time reduce the amounts of active layer materials and chlorinated solvents by 50 and 20 times, respectively. These increased performances can be correlated to the higher polymer crystallinities obtained without applying a post-annealing treatment. As push-coating is a roll-to-roll compatible method, the results presented here open the path to low-cost and eco-friendly fabrication of a wide range of emerging devices based on conjugated polymer materials.

  9. Proceedings of the workshop on new solid state devices for high energy physics

    International Nuclear Information System (INIS)

    1987-12-01

    This paper contains articles on semiconductor devices used in the detection of high energy particles. Some articles reported: Position sensitive semiconductor devices; Scintillation techniques and optical devices; Radiation damage to detectors; VLSI for physics; and experience with Si detectors in NA32

  10. Low-cost fabrication and polar-dependent switching uniformity of memory devices using alumina interfacial layer and Ag nanoparticle monolayer

    Directory of Open Access Journals (Sweden)

    Peng Xia

    2017-11-01

    Full Text Available A facile and low-cost process was developed for fabricating write-once-read-many-times (WORM Cu/Ag NPs/Alumina/Al memory devices, where the alumina passivation layer formed naturally in air at room temperature, whereas the Ag nanoparticle monolayer was in situ prepared through thermal annealing of a 4.5 nm Ag film in air at 150°C. The devices exhibit irreversible transition from initial high resistance (OFF state to low resistance (ON state, with ON/OFF ratio of 107, indicating the introduction of Ag nanoparticle monolayer greatly improves ON/OFF ratio by four orders of magnitude. The uniformity of threshold voltages exhibits a polar-dependent behavior, and a narrow range of threshold voltages of 0.40 V among individual devices was achieved upon the forward voltage. The memory device can be regarded as two switching units connected in series. The uniform alumina interfacial layer and the non-uniform distribution of local electric fields originated from Ag nanoparticles might be responsible for excellent switching uniformity. Since silver ions in active layer can act as fast ion conductor, a plausible mechanism relating to the formation of filaments sequentially among the two switching units connected in series is suggested for the polar-dependent switching behavior. Furthermore, we demonstrate both alumina layer and Ag NPs monolayer play essential roles in improving switching parameters based on comparative experiments.

  11. Low-cost fabrication and polar-dependent switching uniformity of memory devices using alumina interfacial layer and Ag nanoparticle monolayer

    Science.gov (United States)

    Xia, Peng; Li, Luman; Wang, Pengfei; Gan, Ying; Xu, Wei

    2017-11-01

    A facile and low-cost process was developed for fabricating write-once-read-many-times (WORM) Cu/Ag NPs/Alumina/Al memory devices, where the alumina passivation layer formed naturally in air at room temperature, whereas the Ag nanoparticle monolayer was in situ prepared through thermal annealing of a 4.5 nm Ag film in air at 150°C. The devices exhibit irreversible transition from initial high resistance (OFF) state to low resistance (ON) state, with ON/OFF ratio of 107, indicating the introduction of Ag nanoparticle monolayer greatly improves ON/OFF ratio by four orders of magnitude. The uniformity of threshold voltages exhibits a polar-dependent behavior, and a narrow range of threshold voltages of 0.40 V among individual devices was achieved upon the forward voltage. The memory device can be regarded as two switching units connected in series. The uniform alumina interfacial layer and the non-uniform distribution of local electric fields originated from Ag nanoparticles might be responsible for excellent switching uniformity. Since silver ions in active layer can act as fast ion conductor, a plausible mechanism relating to the formation of filaments sequentially among the two switching units connected in series is suggested for the polar-dependent switching behavior. Furthermore, we demonstrate both alumina layer and Ag NPs monolayer play essential roles in improving switching parameters based on comparative experiments.

  12. Fabrication and performance of ACTFEL display devices using manganese-doped zinc germanate as a green-emitting electroluminescent layer

    International Nuclear Information System (INIS)

    Kim, Joo Han; Yoon, Kyung Ho

    2010-01-01

    Alternating-current thin-film electroluminescent (ACTFEL) display devices fabricated using manganese-doped zinc germanate (Zn 2 GeO 4 :Mn) as a green-emitting electroluminescent layer material are described. The ACTFEL display devices were fabricated with a standard bottom emission structure having a multilayer stack of thin films in the metal/semiconductor/insulator/ metal (MSIM) configuration. The device was constructed on a transparent Corning glass substrate through which the emitted EL light passed. The Zn 2 GeO 4 :Mn emission layer was synthesized by using a RF magnetron sputter deposition method, followed by post-annealing at 700 .deg. C in air ambient for 1 hour. The obtained Zn 2 GeO 4 :Mn films were found to be polycrystalline with a rhombohedral crystal structure. A green emission spectrum with a maximum at approximately 538 nm was produced from the fabricated device. The chromaticity color coordinates of the EL emission were measured to be x = 0.308 and y = 0.657. The device demonstrated a sharp increase in the intensity of green EL emission upon increasing the AC peak voltage applied to the device above a threshold of 148 V.

  13. Simultaneous control of thermoelectric properties in p- and n-type materials by electric double-layer gating: New design for thermoelectric device

    Science.gov (United States)

    Takayanagi, Ryohei; Fujii, Takenori; Asamitsu, Atsushi

    2015-05-01

    We report a novel design of a thermoelectric device that can control the thermoelectric properties of p- and n-type materials simultaneously by electric double-layer gating. Here, p-type Cu2O and n-type ZnO were used as the positive and negative electrodes of the electric double-layer capacitor structure. When a gate voltage was applied between the two electrodes, holes and electrons accumulated on the surfaces of Cu2O and ZnO, respectively. The thermopower was measured by applying a thermal gradient along the accumulated layer on the electrodes. We demonstrate here that the accumulated layers worked as a p-n pair of the thermoelectric device.

  14. Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices

    Science.gov (United States)

    Wan, Danny; Manfrini, Mauricio; Vaysset, Adrien; Souriau, Laurent; Wouters, Lennaert; Thiam, Arame; Raymenants, Eline; Sayan, Safak; Jussot, Julien; Swerts, Johan; Couet, Sebastien; Rassoul, Nouredine; Babaei Gavan, Khashayar; Paredis, Kristof; Huyghebaert, Cedric; Ercken, Monique; Wilson, Christopher J.; Mocuta, Dan; Radu, Iuliana P.

    2018-04-01

    Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for spin torque majority gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant step towards the realization of a majority gate. To our knowledge, this is the first fabrication of a cross-shaped free layer shared by several perpendicular MTJs. The fabrication process can be generalized to any geometry and any number of MTJs. Thus, this framework can be applied to other spin logic concepts based on magnetic interconnect. Moreover, it allows exploration of spin dynamics for logic applications.

  15. Magnetism reflectometer study shows LiF layers improve efficiency in spin valve devices

    Energy Technology Data Exchange (ETDEWEB)

    Bardoel, Agatha A [ORNL; Lauter, Valeria [ORNL; Szulczewski, Greg J [ORNL

    2012-01-01

    New, more efficient materials for spin valves - a device used in magnetic sensors, random access memories, and hard disk drives - may be on the way based on research using the magnetism reflectometer at Oak Ridge National Laboratory (ORNL). Spin valve devices work by means of two or more conducting magnetic material layers that alternate their electrical resistance depending on the layers alignment. Giant magnetoresistance is a quantum mechanical effect first observed in thin film structures about 20 years ago. The effect is observed as a significant change in electrical resistance, depending on whether the magnetization of adjacent ferromagnetic layers is in a parallel or an antiparallel magnetic alignment. 'What we are doing here is developing new materials. The search for new materials suitable for injecting and transferring carriers with a preferential spin orientation is most important for the development of spintronics,' said Valeria Lauter, lead instrument scientist on the magnetism reflectometer at the Spallation Neutron Source (SNS), who collaborated on the experiment. The researchers discovered that the conductivity of such materials is improved when an organic polymer semiconductor layer is placed between the magnetic materials. Organic semiconductors are now the material of choice for future spin valve devices because they preserve spin coherence over longer times and distances than conventional semiconductors. While research into spin valves has been ongoing, research into organic semiconductors is recent. Previous research has shown that a 'conductivity mismatch' exists in spin valve systems in which ferromagnetic metal electrodes interface with such organic semiconductors as Alq3 ({pi}-conjugated molecule tris(8-hydroxy-quinoline) aluminium). This mismatch limits the efficient injection of the electrons from the electrodes at the interface with the semiconductor material. However, lithium fluoride (LiF), commonly used in light

  16. Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso; Khan, M. A.; Alshareef, Husam N.

    2014-01-01

    Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm 2V-1s-1, large memory window (~16 V), low read voltages (~-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.

  17. Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2014-06-10

    Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm 2V-1s-1, large memory window (~16 V), low read voltages (~-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.

  18. Atomic-layer deposited IrO2 nanodots for charge-trap flash-memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Cha, Young-Kwan; Seo, Bum-Seok; Park, Sangjin; Park, Ju-Hee; Shin, Sangmin; Seol, Kwang Soo; Park, Jong-Bong; Jung, Young-Soo; Park, Youngsoo; Park, Yoondong; Yoo, In-Kyeong; Choi, Suk-Ho

    2007-01-01

    Charge-trap flash- (CTF) memory structures have been fabricated by employing IrO 2 nanodots (NDs) grown by atomic-layer deposition. A band of isolated IrO 2 NDs of about 3 nm lying almost parallel to Si/SiO 2 interface is confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy. The memory device with IrO 2 NDs shows much larger capacitance-voltage (C-V) hysteresis and memory window compared with the control sample without IrO 2 NDs. After annealing at 800 deg. C for 20 min, the ND device shows almost no change in the width of C-V hysteresis and the ND distribution. These results indicate that the IrO 2 NDs embedded in SiO 2 can be utilized as thermally stable, discrete charge traps, promising for metal oxide-ND-based CTF memory devices

  19. Improved electron injection into Alq{sub 3} based devices using a thin Erq{sub 3} injection layer

    Energy Technology Data Exchange (ETDEWEB)

    Shakya, P; Desai, P; Gillin, W P [Department of Physics, Queen Mary, University of London, Mile End Road, London, E1 4NS (United Kingdom); Curry, R J [Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)

    2008-04-21

    The role of a thin erbium(III) tris(8-hydroxyquinoline) (Erq{sub 3}) interface layer on the electron injection into aluminium(III) tris(8-hydroxyquinoline) (Alq{sub 3}) based organic light emitting devices (OLEDs) has been investigated. It has been shown that the use of a 40 A interface layer can increase the efficiency of a simple Alq{sub 3} OLED with an Al cathode to a level comparable with other, well established, high-efficiency cathodes such as LiF/Al. We also show that, despite the bulk HOMO and LUMO positions for Erq{sub 3} being little different from those for Alq{sub 3}, the presence of an interfacial layer makes the devices turn-on voltage almost independent of the cathode metal. This is explained by there being a vacuum level shift for Erq{sub 3} which is dependent on the work function of the cathode metal.

  20. Comparison of home and away-from-home physical activity using accelerometers and cellular network-based tracking devices.

    Science.gov (United States)

    Ramulu, Pradeep Y; Chan, Emilie S; Loyd, Tara L; Ferrucci, Luigi; Friedman, David S

    2012-08-01

    Measuring physical at home and away from home is essential for assessing health and well-being, and could help design interventions to increase physical activity. Here, we describe how physical activity at home and away from home can be quantified by combining information from cellular network-based tracking devices and accelerometers. Thirty-five working adults wore a cellular network-based tracking device and an accelerometer for 6 consecutive days and logged their travel away from home. Performance of the tracking device was determined using the travel log for reference. Tracking device and accelerometer data were merged to compare physical activity at home and away from home. The tracking device detected 98.6% of all away-from-home excursions, accurately measured time away from home and demonstrated few prolonged signal drop-out periods. Most physical activity took place away from home on weekdays, but not on weekends. Subjects were more physically active per unit of time while away from home, particularly on weekends. Cellular network-based tracking devices represent an alternative to global positioning systems for tracking location, and provide information easily integrated with accelerometers to determine where physical activity takes place. Promoting greater time spent away from home may increase physical activity.

  1. A Real-Time GPP Software-Defined Radio Testbed for the Physical Layer of Wireless Standards

    NARCIS (Netherlands)

    Schiphorst, Roelof; Hoeksema, F.W.; Slump, Cornelis H.

    2005-01-01

    We present our contribution to the general-purpose-processor-(GPP)-based radio. We describe a baseband software-defined radio testbed for the physical layer of wireless LAN standards. All physical layer functions have been successfully mapped on a Pentium 4 processor that performs these functions in

  2. Device physics vis-à-vis fundamental physics in Cold War America: the case of quantum optics.

    Science.gov (United States)

    Bromberg, Joan Lisa

    2006-06-01

    Historians have convincingly shown the close ties U.S. physicists had with the military during the Cold War and have raised the question of whether this alliance affected the content of physics. Some have asserted that it distorted physics, shifting attention from fundamental problems to devices. Yet the papers of physicists in quantum electronics and quantum optics, fields that have been exemplary for those who hold the distortion thesis, show that the same scientists who worked on military devices simultaneously pursued fundamental and foundational topics. This essay examines one such physicist, Marlan O. Scully, with attention to both his extensive foundational studies and the way in which his applied and basic researches played off each other.

  3. Applying Physical-Layer Network Coding in Wireless Networks

    Directory of Open Access Journals (Sweden)

    Liew SoungChang

    2010-01-01

    Full Text Available A main distinguishing feature of a wireless network compared with a wired network is its broadcast nature, in which the signal transmitted by a node may reach several other nodes, and a node may receive signals from several other nodes, simultaneously. Rather than a blessing, this feature is treated more as an interference-inducing nuisance in most wireless networks today (e.g., IEEE 802.11. This paper shows that the concept of network coding can be applied at the physical layer to turn the broadcast property into a capacity-boosting advantage in wireless ad hoc networks. Specifically, we propose a physical-layer network coding (PNC scheme to coordinate transmissions among nodes. In contrast to "straightforward" network coding which performs coding arithmetic on digital bit streams after they have been received, PNC makes use of the additive nature of simultaneously arriving electromagnetic (EM waves for equivalent coding operation. And in doing so, PNC can potentially achieve 100% and 50% throughput increases compared with traditional transmission and straightforward network coding, respectively, in 1D regular linear networks with multiple random flows. The throughput improvements are even larger in 2D regular networks: 200% and 100%, respectively.

  4. Ferroelectric Thin Films Basic Properties and Device Physics for Memory Applications

    CERN Document Server

    Okuyama, Masanori

    2005-01-01

    Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.

  5. Internal transmission coefficient in charges carrier generation layer of graphene/Si based solar cell device

    International Nuclear Information System (INIS)

    Rosikhin, Ahmad; Winata, Toto

    2016-01-01

    Internal transmission profile in charges carrier generation layer of graphene/Si based solar cell has been explored theoretically. Photovoltaic device was constructed from graphene/Si heterojunction forming a multilayer stuck with Si as generation layer. The graphene/Si sheet was layered on ITO/glass wafer then coated by Al forming Ohmic contact with Si. Photon incident propagate from glass substrate to metal electrode and assumed that there is no transmission in Al layer. The wavelength range spectra used in this calculation was 200 – 1000 nm. It found that transmission intensity in the generation layer show non-linear behavior and partitioned by few areas which related with excitation process. According to this information, it may to optimize the photons absorption to create more excitation process by inserting appropriate material to enhance optical properties in certain wavelength spectra because of the exciton generation is strongly influenced by photon absorption.

  6. Device physics underlying silicon heterojunction and passivating-contact solar cells: A topical review

    KAUST Repository

    Chavali, Raghu V. K.; De Wolf, Stefaan; Alam, Muhammad A.

    2018-01-01

    The device physics of commercially dominant diffused-junction silicon solar cells is well understood, allowing sophisticated optimization of this class of devices. Recently, so-called passivating-contact solar cell technologies have become prominent

  7. The effect of different oxygen exchange layers on TaO x based RRAM devices

    Science.gov (United States)

    Alamgir, Zahiruddin; Holt, Joshua; Beckmann, Karsten; Cady, Nathaniel C.

    2018-01-01

    In this work, we investigated the effect of the oxygen exchange layer (OEL) on the resistive switching properties of TaO x based memory cells. It was found that the forming voltage, SET-RESET voltage, R off, R on and retention properties are strongly correlated with the oxygen scavenging ability of the OEL, and the resulting oxygen vacancy formation ability of this layer. Higher forming voltage was observed for OELs having lower electronegativity/lower Gibbs free energy for oxide formation, and devices fabricated with these OELs exhibited an increased memory window, when using similar SET-RESET voltage range.

  8. Layer-by-layer deposition of zirconium oxide films from aqueous solutions for friction reduction in silicon-based microelectromechanical system devices

    International Nuclear Information System (INIS)

    Liu Junfu; Nistorica, Corina; Gory, Igor; Skidmore, George; Mantiziba, Fadziso M.; Gnade, Bruce E.

    2005-01-01

    This work reports layer-by-layer deposition of zirconium oxide on a Si surface from aqueous solutions using the successive ionic layer adsorption and reaction technique. The process consists of repeated cycles of adsorption of zirconium precursors, water rinse, and hydrolysis. The film composition was determined by X-ray photoelectron spectroscopy. The film thickness was determined by Rutherford backscattering spectrometry, by measuring the Zr atom concentration. The average deposition rate from a 0.1 M Zr(SO 4 ) 2 solution on a SiO 2 /Si surface is 0.62 nm per cycle. Increasing the acidity of the zirconium precursor solution inhibits the deposition of the zirconium oxide film. Atomic force microscopy shows that the zirconium oxide film consists of nanoparticles of 10-50 nm in the lateral dimension. The surface roughness increased with increasing number of deposition cycles. Friction measurements made with a microelectromechanical system device reveal a reduction of 45% in the friction coefficient of zirconium oxide-coated surfaces vs. uncoated surfaces in air

  9. Effect of Mesostructured Layer upon Crystalline Properties and Device Performance on Perovskite Solar Cells.

    Science.gov (United States)

    Listorti, Andrea; Juarez-Perez, Emilio J; Frontera, Carlos; Roiati, Vittoria; Garcia-Andrade, Laura; Colella, Silvia; Rizzo, Aurora; Ortiz, Pablo; Mora-Sero, Ivan

    2015-05-07

    One of the most fascinating characteristics of perovskite solar cells (PSCs) is the retrieved obtainment of outstanding photovoltaic (PV) performances withstanding important device configuration variations. Here we have analyzed CH3NH3PbI3-xClx in planar or in mesostructured (MS) configurations, employing both titania and alumina scaffolds, fully infiltrated with perovskite material or presenting an overstanding layer. The use of the MS scaffold induces to the perovskite different structural properties, in terms of grain size, preferential orientation, and unit cell volume, in comparison to the ones of the material grown with no constraints, as we have found out by X-ray diffraction analyses. We have studied the effect of the PSC configuration on photoinduced absorption and time-resolved photoluminescence, complementary techniques that allow studying charge photogeneration and recombination. We have estimated electron diffusion length in the considered configurations observing a decrease when the material is confined in the MS scaffold with respect to a planar architecture. However, the presence of perovskite overlayer allows an overall recovering of long diffusion lengths explaining the record PV performances obtained with a device configuration bearing both the mesostructure and a perovskite overlayer. Our results suggest that performance in devices with perovskite overlayer is mainly ruled by the overlayer, whereas the mesoporous layer influences the contact properties.

  10. Physical-layer network coding in coherent optical OFDM systems.

    Science.gov (United States)

    Guan, Xun; Chan, Chun-Kit

    2015-04-20

    We present the first experimental demonstration and characterization of the application of optical physical-layer network coding in coherent optical OFDM systems. It combines two optical OFDM frames to share the same link so as to enhance system throughput, while individual OFDM frames can be recovered with digital signal processing at the destined node.

  11. Device and performance parameters of Cu(In,Ga)(Se,S)2-based solar cells with varying i-ZnO layer thickness

    International Nuclear Information System (INIS)

    Macabebe, E.Q.B.; Sheppard, C.J.; Dyk, E.E. van

    2009-01-01

    In pursuit of low-cost and highly efficient thin film solar cells, Cu(In,Ga)(Se,S) 2 /CdS/i-ZnO/ZnO:Al (CIGSS) solar cells were fabricated using a two-step process. The thickness of i-ZnO layer was varied from 0 to 454 nm. The current density-voltage (J-V) characteristics of the devices were measured, and the device and performance parameters of the solar cells were obtained from the J-V curves to analyze the effect of varying i-ZnO layer thickness. The device parameters were determined using a parameter extraction method that utilized particle swarm optimization. The method is a curve-fitting routine that employed the two-diode model. The J-V curves of the solar cells were fitted with the model and the parameters were determined. Results show that as the thickness of i-ZnO was increased, the average efficiency and the fill factor (FF) of the solar cells increase. Device parameters reveal that although the series resistance increased with thicker i-ZnO layer, the solar cells absorbed more photons resulting in higher short-circuit current density (J sc ) and, consequently, higher photo-generated current density (J L ). For solar cells with 303-454 nm-thick i-ZnO layer, the best devices achieved efficiency between 15.24% and 15.73% and the fill factor varied between 0.65 and 0.67.

  12. Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

    Science.gov (United States)

    Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

    2018-04-01

    Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

  13. Applied Physics of Carbon Nanotubes Fundamentals of Theory, Optics and Transport Devices

    CERN Document Server

    Rotkin, Slava V

    2005-01-01

    The book describes the state-of-the-art in fundamental, applied and device physics of nanotubes, including fabrication, manipulation and characterization for device applications; optics of nanotubes; transport and electromechanical devices and fundamentals of theory for applications. This information is critical to the field of nanoscience since nanotubes have the potential to become a very significant electronic material for decades to come. The book will benefit all all readers interested in the application of nanotubes, either in their theoretical foundations or in newly developed characterization tools that may enable practical device fabrication.

  14. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  15. Trusted communications with physical layer security for 5G and beyond

    CERN Document Server

    Duong, Trung Q; Poor, H Vincent

    2017-01-01

    Securely transferring confidential information over a wireless network is a challenging task. This book addresses security issues, not only for 5G but also beyond, using physical layer security technology and techniques.

  16. Research on condensed matter and atomic physics using major experimental facilities and devices: Physics, chemistry, biology. Reports on results. Vol. 3. 4. Chemistry. 5. Biology. 6. Development of methods and instruments

    International Nuclear Information System (INIS)

    1993-01-01

    This report in three volumes substantiates the contents of the programme survey published in September 1989. The progress reports cover the following research areas: Vol. I, (1). Atomic and molecular physics - free atoms, molecules, macromolecules, clusters, matrix-isolated atoms and molecules. (2) Physics and chemistry of surfaces and interfaces - epitaxy, surface structure, adsorption, electrical, magnetic, and optical properties, thin films, synthetic layer structure. Vol. II, (3). Solid-state physics, and materials science -structural research, lattice dynamics, magnetic structure and dynamics, electronic states; load; spin and pulse density fluctuations; diffusion and internal motion, defects, unordered systems and liquids. Vol. III, (4). Chemistry - bonding and structure, kinetics and reaction mechanisms, polymer research, analysis and synthesis. (5). Biology, - structure and dynamics of biological macromolecules, membrane and cell biology. (6) Development of methods and instruments - neutron sources, synchrotron sources, special accelerators, research with interlinked systems and devices. (orig.) [de

  17. Energy expenditure prediction via a footwear-based physical activity monitor: Accuracy and comparison to other devices

    Science.gov (United States)

    Dannecker, Kathryn

    2011-12-01

    Accurately estimating free-living energy expenditure (EE) is important for monitoring or altering energy balance and quantifying levels of physical activity. The use of accelerometers to monitor physical activity and estimate physical activity EE is common in both research and consumer settings. Recent advances in physical activity monitors include the ability to identify specific activities (e.g. stand vs. walk) which has resulted in improved EE estimation accuracy. Recently, a multi-sensor footwear-based physical activity monitor that is capable of achieving 98% activity identification accuracy has been developed. However, no study has compared the EE estimation accuracy for this monitor and compared this accuracy to other similar devices. Purpose . To determine the accuracy of physical activity EE estimation of a footwear-based physical activity monitor that uses an embedded accelerometer and insole pressure sensors and to compare this accuracy against a variety of research and consumer physical activity monitors. Methods. Nineteen adults (10 male, 9 female), mass: 75.14 (17.1) kg, BMI: 25.07(4.6) kg/m2 (mean (SD)), completed a four hour stay in a room calorimeter. Participants wore a footwear-based physical activity monitor, as well as three physical activity monitoring devices used in research: hip-mounted Actical and Actigraph accelerometers and a multi-accelerometer IDEEA device with sensors secured to the limb and chest. In addition, participants wore two consumer devices: Philips DirectLife and Fitbit. Each individual performed a series of randomly assigned and ordered postures/activities including lying, sitting (quietly and using a computer), standing, walking, stepping, cycling, sweeping, as well as a period of self-selected activities. We developed branched (i.e. activity specific) linear regression models to estimate EE from the footwear-based device, and we used the manufacturer's software to estimate EE for all other devices. Results. The shoe

  18. Mobility and Device Applications of Heavily Doped Silicon and Strained SILICON(1-X) Germanium(x) Layers

    Science.gov (United States)

    Carns, Timothy Keith

    With the advent of Si molecular beam epitaxy (Si -MBE), a significant amount of research has occurred to seek alternative high conductivity Si-based materials such as rm Si_{1-x}Ge_ {x} and delta-doped Si. These materials have brought improvements in device speeds and current drives with the added advantage of monolithic integration into Si VLSI circuits. The bulk of research in Si-based materials has been devoted to the implementation of strained rm Si_{1-x}Ge_{x} as the base layer of a rm Si_ {1-x}Ge_{x}/Si heterojunction bipolar transistor (HBT). Because of the valence band offset, the rm Si_{1-x}Ge _{x} layer can be heavily doped, leading to lower base sheet resistances and hence, improved speed performances. The Ge content in the base can also be graded to increase the drift field in the base. However, very few hole mobility measurements have been done in these strained layers, leading to limitations in device modeling and in understanding the transport behavior in this important material. In addition to rm Si_{1 -x}Ge_{x}, much potential also exists in using delta-doping in Si for improved conductivities over those of bulk Si. However, as of yet, delta-doped Si has received little attention. Therefore, this dissertation is dedicated to the investigation of both of these Si-based materials (strained rm Si_{1-x}Ge_{x } and delta-doped Si and rm Si_{1-x}Ge_ {x}) for the purpose of obtaining higher conductivities than comparably doped bulk Si. This work is divided into three parts to accomplish this objective. The first part is contained in Chapter 3 and is comprised of a comprehensive characterization of the hole mobility in compressively strained rm Si_{1 -x}Ge_{x}. Few results have been obtained prior to this research which has led to many inaccuracies in device modeling. The second part of this dissertation in Chapters 4 and 5 is devoted to the study of the mobility behavior in both boron and antimony delta-doped Si and rm Si_ {1-x}Ge_{x}. The important

  19. Solid-State Electrochromic Device Consisting of Amorphous WO3 and Various Thin Oxide Layers

    Science.gov (United States)

    Shizukuishi, Makoto; Shimizu, Isamu; Inoue, Eiichi

    1980-11-01

    A mixed oxide containing Cr2O3 was introduced into an amorphous WO3 solid-state electrochromic device (ECD) in order to improve its colour memory effect. The electrochromic characteristics were greatly affected by the chemical constituents of a dielectric layer on the a-WO3 layer. Particularly, long memory effect and low power dissipation were attained in a solid-state ECD consisting of a-WO3 and Cr2O3\\cdotV2O5(50 wt.%). Some electrochromic characteristics of the a-WO3/Cr2O3\\cdotV2O5 ECD and the role of V2O5 were investigated.

  20. Some dynamical properties of very strong double layers in a triple plasma device

    International Nuclear Information System (INIS)

    Carpenter, T.; Torven, S.

    1987-01-01

    Experimental results on three dynamic properties of very strong double layers observed in a triple plasma device are presented. First, it is observed that when an inductance of sufficient size is inserted in series with the external bias supply used to produce the double layer, disruptions in the plasma current occur accompanied by disruptions in the double layer potential. Second, it is observed that with all external reactances reduced as much as possible, a sort of jitter-motion occurs in the position of the double layer around its equilibrium position. Third, when the external bias supply is pulsed, the initial potential distribution is observed to have an essentially uniform slope, as in the case of a vacuum capacitor. The disruption phenomenon may be explained in terms of the behavior of the potential structure as a function of the bias voltage and this explanation is discussed along with the experimental evidence for its validity. A comparable understanding of the other two phenomena has not been achieved, but in both cases there are qualitative difference between the behavior reported here and what has been observed in Q-machines and these difference are discussed. (author)

  1. A method for building low loss multi-layer wiring for superconducting microwave devices

    Science.gov (United States)

    Dunsworth, A.; Barends, R.; Chen, Yu; Chen, Zijun; Chiaro, B.; Fowler, A.; Foxen, B.; Jeffrey, E.; Kelly, J.; Klimov, P. V.; Lucero, E.; Mutus, J. Y.; Neeley, M.; Neill, C.; Quintana, C.; Roushan, P.; Sank, D.; Vainsencher, A.; Wenner, J.; White, T. C.; Neven, H.; Martinis, John M.; Megrant, A.

    2018-02-01

    Complex integrated circuits require multiple wiring layers. In complementary metal-oxide-semiconductor processing, these layers are robustly separated by amorphous dielectrics. These dielectrics would dominate energy loss in superconducting integrated circuits. Here, we describe a procedure that capitalizes on the structural benefits of inter-layer dielectrics during fabrication and mitigates the added loss. We use a deposited inter-layer dielectric throughout fabrication and then etch it away post-fabrication. This technique is compatible with foundry level processing and can be generalized to make many different forms of low-loss wiring. We use this technique to create freestanding aluminum vacuum gap crossovers (airbridges). We characterize the added capacitive loss of these airbridges by connecting ground planes over microwave frequency λ/4 coplanar waveguide resonators and measuring resonator loss. We measure a low power resonator loss of ˜3.9 × 10-8 per bridge, which is 100 times lower than that of dielectric supported bridges. We further characterize these airbridges as crossovers, control line jumpers, and as part of a coupling network in gmon and fluxmon qubits. We measure qubit characteristic lifetimes (T1s) in excess of 30 μs in gmon devices.

  2. Associate host in single-layer co-host polymer electrophosphorescent devices

    International Nuclear Information System (INIS)

    Wang Yuanmin; Teng Feng; Feng Bin; Wang Yongsheng; Xu Xurong

    2006-01-01

    The definition and role of 'host' in polymer LED materials are studied in the present work. 'Primary host' and 'associate host' have been proposed and the rules of how to select an associate host are reported. Based on our experiments and the analysis of the energy scheme of the devices, we suggest that the values of the lowest unoccupied molecular orbital (LUMO) and highest occupied molecular orbital (HOMO) are critical determinant in selecting a suitable associate host. On one hand, the associate host should be a hole-blocking material. This can confine the excitons in the active layer. On the other hand, the associate host should have a suitable LUMO that is convenient for electrons to transport

  3. Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Briggs, B.D.; Bishop, S.M. [SUNY College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, NY 12203 (United States); Leedy, K.D. [Air Force Research Laboratory, 2241 Avionics Circle, Wright Patterson Air Force Base, Dayton, OH 45433 (United States); Cady, N.C., E-mail: ncady@albany.edu [SUNY College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, NY 12203 (United States)

    2014-07-01

    Hafnium oxide-based resistive memory devices have been fabricated on copper bottom electrodes. The HfO{sub x} active layers in these devices were deposited by atomic layer deposition (ALD) at 250 °C with tetrakis(dimethylamido)hafnium(IV) as the metal precursor and an O{sub 2} plasma as the reactant. Depth profiles of the HfO{sub x} by X-ray photoelectron spectroscopy and secondary ion mass spectroscopy revealed a copper concentration on the order of five atomic percent throughout the HfO{sub x} film. In addition to the Cu doped HfO{sub x}, a thin layer (20 nm) of Cu{sub x}O is present at the surface. This surface layer is believed to have formed during the ALD process, and greatly complicates the analysis of the switching mechanism. The resistive memory structures fabricated from the ALD HfO{sub x} exhibited non-polar resistive switching, independent of the top metal electrode (Ni, Pt, Al, Au). Resistive switching current voltage (I–V) curves were analyzed using Schottky emission and ionic hopping models to gain insight into the physical mechanisms underpinning the device behavior. During the forming process it was determined that, at voltages in excess of 2.5 V, an ionic hopping model is in good agreement with the I–V data. The extracted ion hopping distance ∼ 4 Å was within the range of interatomic spacing of HfO{sub 2} during the forming process consistent with ionic motion of Cu{sup 2+} ions. Lastly the on state I–V data was dominated at larger voltages by Schottky emission with an estimated barrier height of ∼ 0.5 eV and a refractive index of 2.59. The consequence of the Schottky emission analysis indicates the on state resistance to be a product of a Pt/Cu{sub 2}O/Cu filament(s)/Cu{sub 2}O/Cu structure. - Highlights: • HfO{sub 2} was grown via atomic layer deposition at 250 and 100 °C on Cu substrates. • A Cu{sub 2}O surface layer and Cu doping were observed in post-deposition of HfO{sub 2}. • Resistive memory devices were fabricated and

  4. Improving the Performance of PbS Quantum Dot Solar Cells by Optimizing ZnO Window Layer

    Science.gov (United States)

    Yang, Xiaokun; Hu, Long; Deng, Hui; Qiao, Keke; Hu, Chao; Liu, Zhiyong; Yuan, Shengjie; Khan, Jahangeer; Li, Dengbing; Tang, Jiang; Song, Haisheng; Cheng, Chun

    2017-04-01

    Comparing with hot researches in absorber layer, window layer has attracted less attention in PbS quantum dot solar cells (QD SCs). Actually, the window layer plays a key role in exciton separation, charge drifting, and so on. Herein, ZnO window layer was systematically investigated for its roles in QD SCs performance. The physical mechanism of improved performance was also explored. It was found that the optimized ZnO films with appropriate thickness and doping concentration can balance the optical and electrical properties, and its energy band align well with the absorber layer for efficient charge extraction. Further characterizations demonstrated that the window layer optimization can help to reduce the surface defects, improve the heterojunction quality, as well as extend the depletion width. Compared with the control devices, the optimized devices have obtained an efficiency of 6.7% with an enhanced V oc of 18%, J sc of 21%, FF of 10%, and power conversion efficiency of 58%. The present work suggests a useful strategy to improve the device performance by optimizing the window layer besides the absorber layer.

  5. A simple and cost-effective method for fabrication of integrated electronic-microfluidic devices using a laser-patterned PDMS layer

    KAUST Repository

    Li, Ming

    2011-12-03

    We report a simple and cost-effective method for fabricating integrated electronic-microfluidic devices with multilayer configurations. A CO 2 laser plotter was employed to directly write patterns on a transferred polydimethylsiloxane (PDMS) layer, which served as both a bonding and a working layer. The integration of electronics in microfluidic devices was achieved by an alignment bonding of top and bottom electrode-patterned substrates fabricated with conventional lithography, sputtering and lift-off techniques. Processes of the developed fabrication method were illustrated. Major issues associated with this method as PDMS surface treatment and characterization, thickness-control of the transferred PDMS layer, and laser parameters optimization were discussed, along with the examination and testing of bonding with two representative materials (glass and silicon). The capability of this method was further demonstrated by fabricating a microfluidic chip with sputter-coated electrodes on the top and bottom substrates. The device functioning as a microparticle focusing and trapping chip was experimentally verified. It is confirmed that the proposed method has many advantages, including simple and fast fabrication process, low cost, easy integration of electronics, strong bonding strength, chemical and biological compatibility, etc. © Springer-Verlag 2011.

  6. Device and performance parameters of Cu(In,Ga)(Se,S){sub 2}-based solar cells with varying i-ZnO layer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Macabebe, E.Q.B. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Sheppard, C.J. [Department of Physics, University of Johannesburg, P.O. Box 524, Auckland Park 2006 (South Africa); Dyk, E.E. van, E-mail: ernest.vandyk@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2009-12-01

    In pursuit of low-cost and highly efficient thin film solar cells, Cu(In,Ga)(Se,S){sub 2}/CdS/i-ZnO/ZnO:Al (CIGSS) solar cells were fabricated using a two-step process. The thickness of i-ZnO layer was varied from 0 to 454 nm. The current density-voltage (J-V) characteristics of the devices were measured, and the device and performance parameters of the solar cells were obtained from the J-V curves to analyze the effect of varying i-ZnO layer thickness. The device parameters were determined using a parameter extraction method that utilized particle swarm optimization. The method is a curve-fitting routine that employed the two-diode model. The J-V curves of the solar cells were fitted with the model and the parameters were determined. Results show that as the thickness of i-ZnO was increased, the average efficiency and the fill factor (FF) of the solar cells increase. Device parameters reveal that although the series resistance increased with thicker i-ZnO layer, the solar cells absorbed more photons resulting in higher short-circuit current density (J{sub sc}) and, consequently, higher photo-generated current density (J{sub L}). For solar cells with 303-454 nm-thick i-ZnO layer, the best devices achieved efficiency between 15.24% and 15.73% and the fill factor varied between 0.65 and 0.67.

  7. A primer on physical-layer network coding

    CERN Document Server

    Liew, Soung Chang; Zhang, Shengli

    2015-01-01

    The concept of physical-layer network coding (PNC) was proposed in 2006 for application in wireless networks. Since then it has developed into a subfield of communications and networking with a wide following. This book is a primer on PNC. It is the outcome of a set of lecture notes for a course for beginning graduate students at The Chinese University of Hong Kong. The target audience is expected to have some prior background knowledge in communication theory and wireless communications, but not working knowledge at the research level. Indeed, a goal of this book/course is to allow the reader

  8. NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices

    CERN Document Server

    Ferry, David; Jacoboni, C

    1988-01-01

    The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES...................

  9. A function-behavior-structure framework for quantification and reproduction of emotional haptic experience in using an electronic device

    International Nuclear Information System (INIS)

    Bae, Il Ju; Lee, Soo Hong; Ok, Hyung Seok; Lee, Jae In

    2013-01-01

    A user's haptic experience in using an electronic device is related to the continuous and dynamic variances of the structural state of the device. Since the changes of the structural component cause complex changes of the dynamics, it is difficult to predict the user's experience. We propose a function-behavior-structure framework to predict and improve the user's experience. The framework consists of the function layer model, the behavior layer model, and the structure layer model. Especially, the independent behavior model to the device is based on a physical phenomenon. Finally, an optimized structure which produces an ideal haptic experience for a cell phone is suggested.

  10. Integrated base stations and a method of transmitting data units in a communications system for mobile devices

    NARCIS (Netherlands)

    Bosch, H.G.P.; Mullender, Sape J.; Narlikar, G.J.; Samuel, L.G.; Yagati, L.N.

    2006-01-01

    Integrated base stations and a method of transmitting data units in a communications system for mobile devices. In one embodiment, an integrated base station includes a communications processor having a protocol stack configured with a media access control layer and a physical layer.

  11. Steady full colour white organic light-emitting devices consisting of an ultrathin red fluorescent layer

    International Nuclear Information System (INIS)

    Wen Wen; Yu Junsheng; Li Lu; Wang Jun; Jiang Yadong

    2009-01-01

    White organic light-emitting devices were fabricated using an ultrathin red fluorescent dye of 3-(dicyanomethylene)-5, 5-dimethyl-1-(4-dimethylamino-styryl)cyclohexene inserted in tris(8-quinolinolato) aluminium layer as a red and green emitting layer (EML) and a thin 4, 4'-bis(2, 2'-diphenylvinyl)-1, 1'-diphenyl (DPVBi) layer as blue EML. A maximum power efficiency of 2.4 lm W -1 at 5.5 V and a maximum luminance of 16 690 cd m -2 at 18.5 V were obtained. Pure white emission with a good colour rendering index of 80 was achieved as low as 5 V. The Commission Internationale de l'Eclairage (CIE) coordinates near (0.330, 0.300) show a slight variation of (-0.020, +0.002) in a wide range of voltages. The achievement of full colour white emission at low-operation voltages and high-colour stability is attributed to the confining emission zone function of the thin EML and direct carrier trapping in the ultrathin layer.

  12. Development of ultraviolet LED devices containing europium (III) complexes in fluorescence layer

    International Nuclear Information System (INIS)

    Iwanaga, Hiroki; Amano, Akio; Aiga, Fumihiko; Harada, Kohichi; Oguchi, Masayuki

    2006-01-01

    Relations between molecular structures of europium complexes and their luminescent properties were investigated. Europium complex with β-diketones and two different phosphine oxides 8 was highly soluble in fluorinated medium, and realized largest fluorescence intensities. The luminous intensity of ultraviolet light emitting diodes devices (LEDs) whose fluorescence layer consists of fluorinated polymer and 8 was over 200 mcd (20 mA). Fluorescence compounds of this type are promising for application in next-generation white LEDs. Moreover, we proposed a novel molecular design of europium complex with asymmetric diphosphine dioxide

  13. Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

    Science.gov (United States)

    Cabrero-Vilatela, A.; Alexander-Webber, J. A.; Sagade, A. A.; Aria, A. I.; Braeuninger-Weimer, P.; Martin, M.-B.; Weatherup, R. S.; Hofmann, S.

    2017-12-01

    The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.

  14. Observation of a current-limited double layer in a linear turbulent-heating device

    International Nuclear Information System (INIS)

    Inuzuka, H.; Torii, Y.; Nagatsu, M.; Tsukishima, T.

    1985-01-01

    Time- and space-resolved measurements of strong double layers (DLs) have been carried out for the first time on a linear turbulent-heating device, together with those of fluctuation spectra and precise current measurements. A stable stong DL is formed even when the electric current through the DL is less than the so-called Bohm value. Discussion of the formation and decay processes is given, indicating a transition from an ion-acoustic DL to a monotonic DL

  15. Cooperative Wireless Communications and Physical Layer Security : State of the Art

    DEFF Research Database (Denmark)

    Rohokale, Vandana M.; Prasad, Neeli R.; Prasad, Ramjee

    2012-01-01

    in the mobile equipment is not feasible due to resource constraints. Cooperative wireless communication (CWC) is the upcoming virtual MIMO technique to combat fading and achieve diversity through user cooperation. Physical layer security (PLS) is the imminent security guarantee for the cooperative communication....

  16. Philosophy and physics of predemonstration fusion devices

    International Nuclear Information System (INIS)

    Clarke, J.F.

    1976-01-01

    A PDFD will operate in the 1980's and must provide the plasma and plasma support technology information necessary to warrant design, construction, and operation of succeeding experimental power reactors and then the demonstration plant. The PDFD must be prototypical of economic fusion devices to justify its cost. Therefore, development of the fusion core will be the focus of the PDFD. The physics performance, power production objectives, and characteristics of the PDFD, and their relationship to the research and development needs to achieve them are outlined. The design criteria for a PDFD which satisfied these constraints will be established

  17. Effect of atomic layer deposited Al2O3:ZnO alloys on thin-film silicon photovoltaic devices

    Science.gov (United States)

    Abdul Hadi, Sabina; Dushaq, Ghada; Nayfeh, Ammar

    2017-12-01

    In this work, we present the effects of the Al2O3:ZnO ratio on the optical and electrical properties of aluminum doped ZnO (AZO) layers deposited by atomic layer deposition, along with AZO application as the anti-reflective coating (ARC) layer and in heterojunction configurations. Here, we report complex refractive indices for AZO layers with different numbers of aluminum atomic cycles (ZnO:Al2O3 = 1:0, 39:1, 19:1, and 9:1) and we confirm their validity by fitting models to experimental data. Furthermore, the most conductive layer (ZnO:Al2O3 = 19:1, conductivity ˜4.6 mΩ cm) is used to fabricate AZO/n+/p-Si thin film solar cells and AZO/p-Si heterojunction devices. The impact of the AZO layer on the photovoltaic properties of these devices is studied by different characterization techniques, resulting in the extraction of recombination and energy band parameters related to the AZO layer. Our results confirm that AZO 19:1 can be used as a low cost and effective conductive ARC layer for solar cells. However, AZO/p-Si heterojunctions suffer from an insufficient depletion region width (˜100 nm) and recombination at the interface states, with an estimated potential barrier of ˜0.6-0.62 eV. The work function of AZO (ZnO:Al2O3 = 19:1) is estimated to be in the range between 4.36 and 4.57 eV. These material properties limit the use of AZO as an emitter in Si solar cells. However, the results imply that AZO based heterojunctions could have applications as low-cost photodetectors or photodiodes, operating under relatively low reverse bias.

  18. Physical Layer Security for Cooperative NOMA Systems

    KAUST Repository

    Chen, Jianchao

    2018-01-09

    In this correspondence, we investigate the physical layer security for cooperative non-orthogonal multiple access (NOMA) systems, where both amplify-and-forward (AF) and decode-and-forward (DF) protocols are considered. More specifically, some analytical expressions are derived for secrecy outage probability (SOP) and strictly positive secrecy capacity (SPSC). Results show that AF and DF almost achieve the same secrecy performance. Moreover, asymptotic results demonstrate that the SOP tends to a constant at high signal-to-noise ratio (SNR). Finally, our results show that the secrecy performance of considered NOMA systems is independent of the channel conditions between the relay and the poor user.

  19. Physical Layer Security for Cooperative NOMA Systems

    KAUST Repository

    Chen, Jianchao; Yang, Liang; Alouini, Mohamed-Slim

    2018-01-01

    In this correspondence, we investigate the physical layer security for cooperative non-orthogonal multiple access (NOMA) systems, where both amplify-and-forward (AF) and decode-and-forward (DF) protocols are considered. More specifically, some analytical expressions are derived for secrecy outage probability (SOP) and strictly positive secrecy capacity (SPSC). Results show that AF and DF almost achieve the same secrecy performance. Moreover, asymptotic results demonstrate that the SOP tends to a constant at high signal-to-noise ratio (SNR). Finally, our results show that the secrecy performance of considered NOMA systems is independent of the channel conditions between the relay and the poor user.

  20. Physical-layer network coding for passive optical interconnect in datacenter networks.

    Science.gov (United States)

    Lin, Rui; Cheng, Yuxin; Guan, Xun; Tang, Ming; Liu, Deming; Chan, Chun-Kit; Chen, Jiajia

    2017-07-24

    We introduce physical-layer network coding (PLNC) technique in a passive optical interconnect (POI) architecture for datacenter networks. The implementation of the PLNC in the POI at 2.5 Gb/s and 10Gb/s have been experimentally validated while the gains in terms of network layer performances have been investigated by simulation. The results reveal that in order to realize negligible packet drop, the wavelengths usage can be reduced by half while a significant improvement in packet delay especially under high traffic load can be achieved by employing PLNC over POI.

  1. Effect of the ZnS shell layer on the charge storage capabilities of organic bistable memory devices fabricated utilizing CuInS2–ZnS core–shell quantum dots embedded in a poly(methylmethacrylate) layer

    International Nuclear Information System (INIS)

    Yun, Dong Yeol; Kim, Tae Whan; Kim, Sang Wook

    2013-01-01

    The electrical characteristics of organic bistable memory devices (OBDs) fabricated utilizing CuInS 2 (CIS) core or CIS–ZnS core–shell quantum dots (QDs) embedded in a poly(methylmethacrylate) (PMMA) layer on indium–tin-oxide (ITO) coated glass substrates were investigated. X-ray photoelectron spectroscopy spectra demonstrated that the stoichiometries of the QDs embedded in a PMMA layer were CIS or CIS–ZnS QDs. Current–voltage measurements on Al/CIS or CIS–ZnS QDs embedded in PMMA layer/ITO glass devices at 300 K showed current bistabilities. The maximum ON/OFF current ratios of the OBDs with CIS or CIS–ZnS QDs were approximately 1 × 10 3 and 1 × 10 5 , respectively. The retention number of ON and OFF states was measured by 1 × 10 5 . The memory mechanisms of the OBDs with CIS or CIS–ZnS QDs are described on the basis of the experimental results. - Highlights: • Organic bistable devices utilizing nanocomposites were fabricated. • Current–voltage results on organic bistable devices showed current bistabilities. • Maximum ON/OFF current ratio of the device with core–shell quantum dots was 1 × 10 5 . • Retention number of the device with core–shell quantum dots was 1 × 10 5

  2. Device physics underlying silicon heterojunction and passivating-contact solar cells: A topical review

    KAUST Repository

    Chavali, Raghu V. K.

    2018-01-15

    The device physics of commercially dominant diffused-junction silicon solar cells is well understood, allowing sophisticated optimization of this class of devices. Recently, so-called passivating-contact solar cell technologies have become prominent, with Kaneka setting the world\\'s silicon solar cell efficiency record of 26.63% using silicon heterojunction contacts in an interdigitated configuration. Although passivating-contact solar cells are remarkably efficient, their underlying device physics is not yet completely understood, not in the least because they are constructed from diverse materials that may introduce electronic barriers in the current flow. To bridge this gap in understanding, we explore the device physics of passivating contact silicon heterojunction (SHJ) solar cells. Here, we identify the key properties of heterojunctions that affect cell efficiency, analyze the dependence of key heterojunction properties on carrier transport under light and dark conditions, provide a self-consistent multiprobe approach to extract heterojunction parameters using several characterization techniques (including dark J-V, light J-V, C-V, admittance spectroscopy, and Suns-Voc), propose design guidelines to address bottlenecks in energy production in SHJ cells, and develop a process-to-module modeling framework to establish the module\\'s performance limits. We expect that our proposed guidelines resulting from this multiscale and self-consistent framework will improve the performance of future SHJ cells as well as other passivating contact-based solar cells.

  3. A function-behavior-structure framework for quantification and reproduction of emotional haptic experience in using an electronic device

    Energy Technology Data Exchange (ETDEWEB)

    Bae, Il Ju; Lee, Soo Hong [Yonsei University, Seoul (Korea, Republic of); Ok, Hyung Seok; Lee, Jae In [LG Electronics Inc, Seoul (Korea, Republic of)

    2013-08-15

    A user's haptic experience in using an electronic device is related to the continuous and dynamic variances of the structural state of the device. Since the changes of the structural component cause complex changes of the dynamics, it is difficult to predict the user's experience. We propose a function-behavior-structure framework to predict and improve the user's experience. The framework consists of the function layer model, the behavior layer model, and the structure layer model. Especially, the independent behavior model to the device is based on a physical phenomenon. Finally, an optimized structure which produces an ideal haptic experience for a cell phone is suggested.

  4. Device-based monitoring in physical activity and public health research

    International Nuclear Information System (INIS)

    Bassett, David R

    2012-01-01

    Measurement of physical activity is important, given the vital role of this behavior in physical and mental health. Over the past quarter of a century, the use of small, non-invasive, wearable monitors to assess physical activity has become commonplace. This review is divided into three sections. In the first section, a brief history of physical activity monitoring is provided, along with a discussion of the strengths and weaknesses of different devices. In the second section, recent applications of physical activity monitoring in physical activity and public health research are discussed. Wearable monitors are being used to conduct surveillance, and to determine the extent and distribution of physical activity and sedentary behaviors in populations around the world. They have been used to help clarify the dose–response relation between physical activity and health. Wearable monitors that provide feedback to users have also been used in longitudinal interventions to motivate research participants and to assess their compliance with program goals. In the third section, future directions for research in physical activity monitoring are discussed. It is likely that new developments in wearable monitors will lead to greater accuracy and improved ease-of-use. (paper)

  5. The physics of degradation in engineered materials and devices fundamentals and principles

    CERN Document Server

    Swingler, Jonathan

    2015-01-01

    Degradation is apparent in all things and is fundamental to both manufactured and natural objects. It is often described by the second law of thermodynamics, where entropy, a measure of disorder, tends to increase with time in a closed system. Things age! This concise reference work brings together experts and key players engaged in the physics of degradation to present the background science, current thinking and developments in understanding, and gives a detailed account of emerging issues across a selection of engineering applications. The work has been put together to equip the upper level undergraduate student, postgraduate student, as well as the professional engineer and scientist, in the importance of physics of degradation. The aim of The Physics of Degradation in Engineered Materials and Devices is to bridge the gap between published textbooks on the fundamental science of degradation phenomena and published research on the engineering science of actual fabricated materials and devices. A history o...

  6. Contribution of the cashew gum (Anacardium occidentale L.) for development of layer-by-layer films with potential application in nanobiomedical devices

    Energy Technology Data Exchange (ETDEWEB)

    Araujo, I.M.S. [Departamento de Quimica, Centro de Ciencias da Natureza, CCN, Universidade Federal do Piaui, UFPI, Teresina, PI, 64049-550 (Brazil); Nucleo de Pesquisa em Biodiversidade e Biotecnologia, BIOTEC, Campus Parnaiba, CMRV, Universidade Federal do Piaui, UFPI, Parnaiba, PI, 64202-020 (Brazil); Zampa, M.F. [Nucleo de Pesquisa em Biodiversidade e Biotecnologia, BIOTEC, Campus Parnaiba, CMRV, Universidade Federal do Piaui, UFPI, Parnaiba, PI, 64202-020 (Brazil); Campus Parnaiba, Instituto Federal de Educacao Ciencia e Tecnologia do Piaui, IFPI, Parnaiba, PI, 64210-260 (Brazil); Moura, J.B.; Santos, J.R. dos [Departamento de Quimica, Centro de Ciencias da Natureza, CCN, Universidade Federal do Piaui, UFPI, Teresina, PI, 64049-550 (Brazil); Eaton, P. [REQUIMTE, Faculdade de Ciencias da Universidade do Porto, Rua do Campo Alegre, Porto, 4169-007 (Portugal); Zucolotto, V. [Grupo de Biofisica Molecular Sergio Mascarenhas, Instituto de Fisica de Sao Carlos, IFSC, USP, Sao Carlos, SP, 13566-590 (Brazil); and others

    2012-08-01

    The search for bioactive molecules to be employed as recognition elements in biosensors has stimulated researchers to pore over the rich Brazilian biodiversity. In this sense, we introduce the use of natural cashew gum (Anacardium occidentale L.) as an active biomaterial to be used in the form of layer-by-layer films, in conjunction with phthalocyanines, which were tested as electrochemical sensors for dopamine detection. We investigated the effects of chemical composition of cashew gum from two different regions of Brazil (Piaui and Ceara states) on the physico-chemical characteristics of these nanostructures. The morphology of the nanostructures containing cashew gum was studied by atomic force microscopy which indicates that smooth films punctuated by globular features were formed that showed low roughness values. The results indicate that, independent of the origin, cashew gum stands out as an excellent film forming material with potential application in nanobiomedical devices as electrochemical sensors. Highlights: Black-Right-Pointing-Pointer This study focused on the use of cashew gum for the formation of LbL films. Black-Right-Pointing-Pointer LbL films containing cashew gums were investigated by AFM and cyclic voltammetry. Black-Right-Pointing-Pointer Cashew gum contributed to obtain stable films with well-defined redox processes. Black-Right-Pointing-Pointer Cashew gum films detected dopamine in low concentrations. Black-Right-Pointing-Pointer These LbL films presented potential application in nanobiomedical devices.

  7. Contribution of the cashew gum (Anacardium occidentale L.) for development of layer-by-layer films with potential application in nanobiomedical devices

    International Nuclear Information System (INIS)

    Araújo, I.M.S.; Zampa, M.F.; Moura, J.B.; Santos, J.R. dos; Eaton, P.; Zucolotto, V.

    2012-01-01

    The search for bioactive molecules to be employed as recognition elements in biosensors has stimulated researchers to pore over the rich Brazilian biodiversity. In this sense, we introduce the use of natural cashew gum (Anacardium occidentale L.) as an active biomaterial to be used in the form of layer-by-layer films, in conjunction with phthalocyanines, which were tested as electrochemical sensors for dopamine detection. We investigated the effects of chemical composition of cashew gum from two different regions of Brazil (Piauí and Ceará states) on the physico-chemical characteristics of these nanostructures. The morphology of the nanostructures containing cashew gum was studied by atomic force microscopy which indicates that smooth films punctuated by globular features were formed that showed low roughness values. The results indicate that, independent of the origin, cashew gum stands out as an excellent film forming material with potential application in nanobiomedical devices as electrochemical sensors. Highlights: ► This study focused on the use of cashew gum for the formation of LbL films. ► LbL films containing cashew gums were investigated by AFM and cyclic voltammetry. ► Cashew gum contributed to obtain stable films with well-defined redox processes. ► Cashew gum films detected dopamine in low concentrations. ► These LbL films presented potential application in nanobiomedical devices.

  8. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Elliot, Alan J., E-mail: alane@ku.edu, E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z., E-mail: alane@ku.edu, E-mail: jwu@ku.edu [Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States); Yu, Haifeng; Zhao, Shiping [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-07-15

    Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

  9. Steady full colour white organic light-emitting devices consisting of an ultrathin red fluorescent layer

    Energy Technology Data Exchange (ETDEWEB)

    Wen Wen; Yu Junsheng; Li Lu; Wang Jun; Jiang Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: jsyu@uestc.edu.cn

    2009-01-07

    White organic light-emitting devices were fabricated using an ultrathin red fluorescent dye of 3-(dicyanomethylene)-5, 5-dimethyl-1-(4-dimethylamino-styryl)cyclohexene inserted in tris(8-quinolinolato) aluminium layer as a red and green emitting layer (EML) and a thin 4, 4'-bis(2, 2'-diphenylvinyl)-1, 1'-diphenyl (DPVBi) layer as blue EML. A maximum power efficiency of 2.4 lm W{sup -1} at 5.5 V and a maximum luminance of 16 690 cd m{sup -2} at 18.5 V were obtained. Pure white emission with a good colour rendering index of 80 was achieved as low as 5 V. The Commission Internationale de l'Eclairage (CIE) coordinates near (0.330, 0.300) show a slight variation of (-0.020, +0.002) in a wide range of voltages. The achievement of full colour white emission at low-operation voltages and high-colour stability is attributed to the confining emission zone function of the thin EML and direct carrier trapping in the ultrathin layer.

  10. Electrical Transport and Low-Frequency Noise in Chemical Vapor Deposited Single-Layer MoS2 Devices

    Science.gov (United States)

    2014-03-18

    PERSON 19b. TELEPHONE NUMBER Pullickel Ajayan Deepak Sharma, Matin Amani, Abhishek Motayed, Pankaj B. Shah, A. Glen Birdwell, Sina Najmaei, Pulickel...in chemical vapor deposited single-layer MoS2 devices Deepak Sharma1,2, Matin Amani3, Abhishek Motayed2,4, Pankaj B Shah3, A Glen Birdwell3, Sina

  11. A scoping review on smart mobile devices and physical strain.

    Science.gov (United States)

    Tegtmeier, Patricia

    2018-01-01

    Smart mobile devices gain increasing importance at work. Integrating these smart mobile devices into the workplace creates new opportunities and challenges for occupational health and safety. Therefore the aim of the following scoping review was to identify ergonomic challenges with the use of smart mobile devices at work with respect to physical problems. A review of 36 papers based on literature including January 2016 was conducted. Biomechanical measures in the reviewed studies demonstrated i.e., head flexion angles exceeding 20° in 20 out of 26 different conditions described. Furthermore, laterally deviated wrists were frequently noted and thumb and finger flexor muscle activities generally greater than 5% MVC were reported. The reviewed literature indicated an elevated biomechanical risk, especially for the neck, the wrists and thumb. This was due to poor posture, ongoing and intermitted muscle tension, and/or repetitive movements. Papers addressing specific risks for smartphone and tablet use in different work environments are scarce. As the technology, as well as the use of smart mobile devices is rapidly changing, further research, especially for prolonged periods in the workplace is needed.

  12. Dual-layer ultrathin film optics: I. Theory and analysis

    International Nuclear Information System (INIS)

    Wang, Qian; Lim, Kim Peng

    2015-01-01

    This paper revisits dual-layer ultrathin film optics, which can be used for functional graded refractive index thin film stack. We present the detailed derivation including s-polarized and p-polarized light under arbitrary incidence angle showing the equivalence between the dual-layer ultrathin films and a negative birefringent thin film and also the approximations made during the derivation. Analysis of the approximations shows the influence of thickness of dual-layer thin films, the incidence angle and desired refractive index of the birefringent film. Numerical comparison between the titanium dioxide/aluminum oxide based dual-layer ultrathin film stack and the equivalent birefringent film verifies the theoretical analysis. The detailed theoretical study and numerical comparison provide a physical insight and design guidelines for dual-layer ultrathin film based optical devices. (paper)

  13. Efficient blue-green and green electroluminescent devices obtained by doping iridium complexes into hole-block material as supplementary light-emitting layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Liang [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zheng, Youxuan, E-mail: yxzheng@mail.nju.edu.cn [State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China); Deng, Ruiping; Feng, Jing; Song, Mingxing; Hao, Zhaomin [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zhang, Hongjie, E-mail: hongjie@ciac.jl.cn [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zuo, Jinglin; You, Xiaozeng [State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China)

    2014-04-15

    In this work, organic electroluminescent (EL) devices with dominant and supplementary light-emitting layers (EMLs) were designed to further improve the EL performances of two iridium{sup III}-based phosphorescent complexes, which have been reported to provide EL devices with slow EL efficiency roll-off. The widely used hole-block material 2,2′,2''-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) was selected as host material to construct the supplementary EML. Compared with single-EML devices, double-EMLs devices showed higher EL efficiencies, higher brightness, and lower operation voltage attributed to wider recombination zone and better balance of carriers. In addition, the insertion of supplementary EML is instrumental in facilitating carriers trapping, thus improving the color purity. Finally, high performance blue-green and green EL devices with maximum current efficiencies of 35.22 and 90.68 cd/A, maximum power efficiencies of 26.36 and 98.18 lm/W, and maximum brightness of 56,678 and 112,352 cd/m{sup 2}, respectively, were obtained by optimizing the doping concentrations. Such a device design strategy extends the application of a double EML device structure and provides a chance to simplify device fabrication processes. -- Highlights: • Electroluminescent devices with supplementary light-emitting layer were fabricated. • Doping concentrations and thicknesses were optimized. • Better balance of holes and electrons causes the enhanced efficiency. • Improved carrier trapping suppresses the emission of host material.

  14. Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

    Directory of Open Access Journals (Sweden)

    Lijuan Wang

    2017-02-01

    Full Text Available Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

  15. Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations.

    Science.gov (United States)

    Zhang, Congcong; Chen, Penglei; Hu, Wenping

    2016-03-09

    Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. 24 Hours of Sleep, Sedentary Behavior, and Physical Activity with Nine Wearable Devices

    OpenAIRE

    Rosenberger, Mary E.; Buman, Matthew P.; Haskell, William L.; McConnell, Michael V.; Carstensen, Laura L.

    2016-01-01

    Getting enough sleep, exercising and limiting sedentary activities can greatly contribute to disease prevention and overall health and longevity. Measuring the full 24-hour activity cycle - sleep, sedentary behavior (SED), light intensity physical activity (LPA) and moderate-to-vigorous physical activity (MVPA) - may now be feasible using small wearable devices.

  17. Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices.

    Science.gov (United States)

    Rathi, Servin; Lee, Inyeal; Lim, Dongsuk; Wang, Jianwei; Ochiai, Yuichi; Aoki, Nobuyuki; Watanabe, Kenji; Taniguchi, Takashi; Lee, Gwan-Hyoung; Yu, Young-Jun; Kim, Philip; Kim, Gil-Ho

    2015-08-12

    Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene-MoS2 heterostructure.

  18. The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors

    International Nuclear Information System (INIS)

    Chang, A.C.K.; Ross, I.M.; Norris, D.J.; Cullis, A.G.; Tang, Y.T.; Cerrina, C.; Evans, A.G.R.

    2006-01-01

    In this study we have highlighted the effect of non-uniform channel layer growth by the direct correlation of the microstructure and electrical characteristics in state-of-the-art pseudomorphic Si/SiGe p-channel metal oxide semiconductor field effect transistor devices fabricated on Si. Two nominally identical sets of devices from adjacent locations of the same wafer were found to have radically different distributions in gate threshold voltages. Due to the close proximity and narrow gate length of the devices, focused ion beam milling was used to prepare a number of thin cross-sections from each of the two regions for subsequent analysis using transmission electron microscopy. It was found that devices from the region giving a very narrow range of gate threshold voltages exhibited a uniform microstructure in general agreement with the intended growth parameters. However, in the second region, which showed a large spread in the gate threshold voltages, profound anomalies in the microstructure were observed. These anomalies consisted of fluctuations in the quality and thickness of the SiGe strained layers. The non-uniform growth of the strained SiGe layer clearly accounted for the poorly controlled threshold voltages of these devices. The results emphasize the importance of good layer growth uniformity to ensure optimum device yield

  19. An Accelerator Control Middle Layer Using MATLAB

    International Nuclear Information System (INIS)

    Portmann, Gregory J.; Corbett, Jeff; Terebilo, Andrei

    2005-01-01

    Matlab is a matrix manipulation language originally developed to be a convenient language for using the LINPACK and EISPACK libraries. What makes Matlab so appealing for accelerator physics is the combination of a matrix oriented programming language, an active workspace for system variables, powerful graphics capability, built-in math libraries, and platform independence. A number of software toolboxes for accelerators have been written in Matlab--the Accelerator Toolbox (AT) for machine simulations, LOCO for accelerator calibration, Matlab Channel Access Toolbox (MCA) for EPICS connections, and the Middle Layer. This paper will describe the ''middle layer'' software toolbox that resides between the high-level control applications and the low-level accelerator control system. This software was a collaborative effort between ALS (LBNL) and SPEAR3 (SSRL) but easily ports to other machines. Five accelerators presently use this software. The high-level Middle Layer functionality includes energy ramp, configuration control (save/restore), global orbit correction, local photon beam steering, insertion device compensation, beam-based alignment, tune correction, response matrix measurement, and script-based programs for machine physics studies

  20. SOLID-STATE STORAGE DEVICE FLASH TRANSLATION LAYER

    DEFF Research Database (Denmark)

    2017-01-01

    Embodiments of the present invention include a method for storing a data page d on a solid-state storage device, wherein the solid-state storage device is configured to maintain a mapping table in a Log-Structure Merge (LSM) tree having a C0 component which is a random access memory (RAM) device...

  1. Effect of a PEDOT:PSS modified layer on the electrical characteristics of flexible memristive devices based on graphene oxide:polyvinylpyrrolidone nanocomposites

    Science.gov (United States)

    Kim, Woo Kyum; Wu, Chaoxing; Kim, Tae Whan

    2018-06-01

    The electrical characteristics of flexible memristive devices utilizing a graphene oxide (GO):polyvinylpyrrolidone (PVP) nanocomposite charge-trapping layer with a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)-modified layer fabricated on an indium-tin-oxide (ITO)-coated polyethylene glycol naphthalate (PEN) substrate were investigated. Current-voltage (I-V) curves for the Al/GO:PVP/PEDOT:PSS/ITO/PEN devices showed remarkable hysteresis behaviors before and after bending. The maximum memory margins of the devices before and after 100 bending cycles were approximately 7.69 × 103 and 5.16 × 102, respectively. The devices showed nonvolatile memory effect with a retention time of more than 1 × 104 s. The "Reset" voltages were distributed between 2.3 and 3.5 V, and the "Set" voltages were dispersed between -0.7 and -0.2 V, indicative of excellent, uniform electrical performance. The endurance number of ON/OFF-switching and bending cycles for the devices was 1 × 102, respectively. The bipolar resistive switching behavior was explained on the basis of I-V results. In particular, the bipolar resistive switching behaviors of the LRS and the HRS for the devices are dominated by the Ohmic and space charge current mechanisms, respectively.

  2. Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Jia-Ling; Lin, Han-Yu; Su, Bo-Yuan; Chen, Yu-Cheng [Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Liu, Ssu-Yin [Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Chang, Chia-Chiang; Wu, Chin-Jyi [Industrial Technology Research Institute, Mechanical and Systems Research Laboratories, Hsinchu 310, Taiwan (China)

    2014-04-01

    Highlights: • The electrodes of bi-layer GZO/ ZnO and single-layer GZO in α-IGZO TFT were compared. • The TFT performances of two different structures were systematically investigated. • The bi-layer GZO/100-nm ZnO S/D electrodes showed the better TFT device properties. - Abstract: In this research, top-gate bottom-contact thin-film transistors (TFTs) made with amorphous indium gallium zinc oxide (α-IGZO) active layers were grown using the radio-frequency sputtering technique. Two kinds of source and drain (S/D) electrodes, namely bi-layer GZO/100-nm ZnO buffer layer/Corning 1737 and single-layer GZO/Corning 1737, used in the TFT devices and the electric characteristics of the devices were compared. To explain the differences in the TFT performances with these different S/D electrodes, X-ray reflectivity (XRR) and contact angles were measured. The α-IGZO TFT with the bi-layer GZO/100-nm ZnO buffer layer structure as S/D electrodes exhibited superior device performance compared to that of the TFT with a single-layer GZO structure, with a higher thin film density (5.94 g/cm{sup 3}), lower surface roughness (0.817 nm), and larger surface energy (62.07 mJ/m{sup 2}) and better adhesion properties of neighboring α-IGZO films. In addition, the mechanisms responsible for the GZO/100-nm ZnO buffer layer/Corning 1737 structure S/D electrodes improving the device characteristics were systematically investigated. The α-IGZO TFT saturation mobility, subthreshold voltage, on/off current ratio, and the trap density of the GZO/100-nm ZnO buffer layer/Corning 1737 S/D electrodes were 13.5 cm{sup 2} V{sup −1} S{sup −1}, 0.43 V/decade, 3.56 × 10{sup 7}, and 5.65 × 10{sup 12} eV{sup −1} cm{sup −2}, respectively, indicating the potential of this bi-layer structure to be applied to large-area flat-panel displays.

  3. Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors

    International Nuclear Information System (INIS)

    Wu, Jia-Ling; Lin, Han-Yu; Su, Bo-Yuan; Chen, Yu-Cheng; Chu, Sheng-Yuan; Liu, Ssu-Yin; Chang, Chia-Chiang; Wu, Chin-Jyi

    2014-01-01

    Highlights: • The electrodes of bi-layer GZO/ ZnO and single-layer GZO in α-IGZO TFT were compared. • The TFT performances of two different structures were systematically investigated. • The bi-layer GZO/100-nm ZnO S/D electrodes showed the better TFT device properties. - Abstract: In this research, top-gate bottom-contact thin-film transistors (TFTs) made with amorphous indium gallium zinc oxide (α-IGZO) active layers were grown using the radio-frequency sputtering technique. Two kinds of source and drain (S/D) electrodes, namely bi-layer GZO/100-nm ZnO buffer layer/Corning 1737 and single-layer GZO/Corning 1737, used in the TFT devices and the electric characteristics of the devices were compared. To explain the differences in the TFT performances with these different S/D electrodes, X-ray reflectivity (XRR) and contact angles were measured. The α-IGZO TFT with the bi-layer GZO/100-nm ZnO buffer layer structure as S/D electrodes exhibited superior device performance compared to that of the TFT with a single-layer GZO structure, with a higher thin film density (5.94 g/cm 3 ), lower surface roughness (0.817 nm), and larger surface energy (62.07 mJ/m 2 ) and better adhesion properties of neighboring α-IGZO films. In addition, the mechanisms responsible for the GZO/100-nm ZnO buffer layer/Corning 1737 structure S/D electrodes improving the device characteristics were systematically investigated. The α-IGZO TFT saturation mobility, subthreshold voltage, on/off current ratio, and the trap density of the GZO/100-nm ZnO buffer layer/Corning 1737 S/D electrodes were 13.5 cm 2 V −1 S −1 , 0.43 V/decade, 3.56 × 10 7 , and 5.65 × 10 12 eV −1 cm −2 , respectively, indicating the potential of this bi-layer structure to be applied to large-area flat-panel displays

  4. Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS2 Device.

    Science.gov (United States)

    Khan, Muhammad Atif; Rathi, Servin; Park, Jinwoo; Lim, Dongsuk; Lee, Yoontae; Yun, Sun Jin; Youn, Doo-Hyeb; Kim, Gil-Ho

    2017-08-16

    The self-biasing effects of ion gel from source and drain electrodes on electrical characteristics of single layer and few layer molybdenum disulfide (MoS 2 ) field-effect transistor (FET) have been studied. The self-biasing effect of ion gel is tested for two different configurations, covered and open, where ion gel is in contact with either one or both, source and drain electrodes, respectively. In open configuration, the linear output characteristics of the pristine device becomes nonlinear and on-off ratio drops by 3 orders of magnitude due to the increase in "off" current for both single and few layer MoS 2 FETs. However, the covered configuration results in a highly asymmetric output characteristics with a rectification of around 10 3 and an ideality factor of 1.9. This diode like behavior has been attributed to the reduction of Schottky barrier width by the electric field of self-biased ion gel, which enables an efficient injection of electrons by tunneling at metal-MoS 2 interface. Finally, finite element method based simulations are carried out and the simulated results matches well in principle with the experimental analysis. These self-biased diodes can perform a crucial role in the development of high-frequency optoelectronic and valleytronic devices.

  5. Screen time by different devices in adolescents: association with physical inactivity domains and eating habits.

    Science.gov (United States)

    Delfino, Leandro D; Dos Santos Silva, Diego A; Tebar, William R; Zanuto, Edner F; Codogno, Jamile S; Fernandes, Rômulo A; Christofaro, Diego G

    2018-03-01

    Sedentary behaviors in adolescents are associated with using screen devices, analyzed as the total daily time in television viewing, using the computer and video game. However, an independent and clustered analysis of devices allows greater understanding of associations with physical inactivity domains and eating habits in adolescents. Sample of adolescents aged 10-17 years (N.=1011) from public and private schools, randomly selected. The use of screen devices was measured by hours per week spent in each device: TV, computer, videogames and mobile phone/tablet. Physical inactivity domains (school, leisure and sports), eating habits (weekly food consumption frequency) and socioeconomic status were assessed by questionnaire. The prevalence of high use of mobile phone/tablet was 70% among adolescents, 63% showed high use of TV or computer and 24% reported high use of videogames. High use of videogames was greater among boys and high use of mobile phone/tablet was higher among girls. Significant associations of high use of TV (OR=1.43, 95% CI: 1.04-1.99), computer (OR=1.44, 95% CI: 1.03-2.02), videogames (OR=1.65, 95% CI: 1.13-2.69) and consumption of snacks were observed. High use of computer was associated with fried foods consumption (OR=1.32, 95% CI: 1.01-1.75) and physical inactivity (OR=1.41, 95% CI: 1.03-1.95). Mobile phone was associated with consumption of sweets (OR=1.33, 95% CI: 1.00-1.80). Cluster using screen devices showed associations with high consumption of snacks, fried foods and sweets, even after controlling for confounding variables. The high use of screen devices was associated with high consumption of snacks, fried foods, sweets and physical inactivity in adolescents.

  6. Double-layered liquid crystal light shutter for control of absorption and scattering of the light incident to a transparent display device

    Science.gov (United States)

    Huh, Jae-Won; Yu, Byeong-Hun; Shin, Dong-Myung; Yoon, Tae-Hoon

    2015-03-01

    Recently, a transparent display has got much attention as one of the next generation display devices. Especially, active studies on a transparent display using organic light-emitting diodes (OLEDs) are in progress. However, since it is not possible to obtain black color using a transparent OLED, it suffers from poor visibility. This inevitable problem can be solved by using a light shutter. Light shutter technology can be divided into two types; light absorption and scattering. However, a light shutter based on light absorption cannot block the background image perfectly and a light shutter based on light scattering cannot provide black color. In this work we demonstrate a light shutter using two liquid crystal (LC) layers, a light absorption layer and a light scattering layer. To realize a light absorption layer and a light scattering layer, we use the planar state of a dye-doped chiral nematic LC (CNLC) cell and the focal-conic state of a long-pitch CNLC cell, respectively. The proposed light shutter device can block the background image perfectly and show black color. We expect that the proposed light shutter can increase the visibility of a transparent display.

  7. Predicting the valley physics of silicon quantum dots directly from a device layout

    Science.gov (United States)

    Gamble, John King; Harvey-Collard, Patrick; Jacobson, N. Tobias; Bacewski, Andrew D.; Nielsen, Erik; Montaño, Inès; Rudolph, Martin; Carroll, Malcolm S.; Muller, Richard P.

    Qubits made from electrostatically-defined quantum dots in Si-based systems are excellent candidates for quantum information processing applications. However, the multi-valley structure of silicon's band structure provides additional challenges for the few-electron physics critical to qubit manipulation. Here, we present a theory for valley physics that is predictive, in that we take as input the real physical device geometry and experimental voltage operation schedule, and with minimal approximation compute the resulting valley physics. We present both effective mass theory and atomistic tight-binding calculations for two distinct metal-oxide-semiconductor (MOS) quantum dot systems, directly comparing them to experimental measurements of the valley splitting. We conclude by assessing these detailed simulations' utility for engineering desired valley physics in future devices. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. The authors gratefully acknowledge support from the Sandia National Laboratories Truman Fellowship Program, which is funded by the Laboratory Directed Research and Development (LDRD) Program.

  8. Exploration of spherical torus physics in the NSTX device

    Science.gov (United States)

    Ono, M.; Kaye, S. M.; Peng, Y.-K. M.; Barnes, G.; Blanchard, W.; Carter, M. D.; Chrzanowski, J.; Dudek, L.; Ewig, R.; Gates, D.; Hatcher, R. E.; Jarboe, T.; Jardin, S. C.; Johnson, D.; Kaita, R.; Kalish, M.; Kessel, C. E.; Kugel, H. W.; Maingi, R.; Majeski, R.; Manickam, J.; McCormack, B.; Menard, J.; Mueller, D.; Nelson, B. A.; Nelson, B. E.; Neumeyer, C.; Oliaro, G.; Paoletti, F.; Parsells, R.; Perry, E.; Pomphrey, N.; Ramakrishnan, S.; Raman, R.; Rewoldt, G.; Robinson, J.; Roquemore, A. L.; Ryan, P.; Sabbagh, S.; Swain, D.; Synakowski, E. J.; Viola, M.; Williams, M.; Wilson, J. R.; NSTX Team

    2000-03-01

    The National Spherical Torus Experiment (NSTX) is being built at Princeton Plasma Physics Laboratory to test the fusion physics principles for the spherical torus concept at the MA level. The NSTX nominal plasma parameters are R0 = 85 cm, a = 67 cm, R/a >= 1.26, Bt = 3 kG, Ip = 1 MA, q95 = 14, elongation κ The plasma heating/current drive tools are high harmonic fast wave (6 MW, 5 s), neutral beam injection (5 MW, 80 keV, 5 s) and coaxial helicity injection. Theoretical calculations predict that NSTX should provide exciting possibilities for exploring a number of important new physics regimes, including very high plasma β, naturally high plasma elongation, high bootstrap current fraction, absolute magnetic well and high pressure driven sheared flow. In addition, the NSTX programme plans to explore fully non-inductive plasma startup as well as a dispersive scrape-off layer for heat and particle flux handling.

  9. Physical properties of layered homologous RE-B-C(N) compounds

    International Nuclear Information System (INIS)

    Mori, Takao; Zhang Fuxiang; Leithe-Jasper, Andreas

    2004-01-01

    Physical properties of a series of homologous RE-B-C(N) B 12 cluster compounds REB 17 CN, REB 22 C 2 N, and REB 28.5 C 4 (RE=Er,Ho) were investigated. The structures of the compounds are layer-like along the c-axis, with rare earth and B 6 octahedral layers separated by B 12 icosahedral and C-B-C chain layers whose number increases successively from two B 12 layers for the REB 17 CN compound to four for the REB 28.5 C 4 compound. The rare earth atoms are configured in two triangular flat layers which are stacked on top of one another in AB stacking where the nearest-neighbor rare earth directions are the three atoms forming a triangle in the adjacent layer. The series of homologous compounds exhibit a spin glass transition with T f shifting in correspondence with variations of the basal plane lattice constants, consistent with the magnetic interaction being effective in the basal planes. The isothermal remanent magnetization shows a stretched exponential decay I m (t)∝ exp[-Ct -(1-n) ]. Exponents determined for the different homologous compounds were scaled as a function of T r =T/T f and found to follow the empirical dependency determined for typical spin glasses. It is indicated that a mixture of disorder originating from the partial occupancy of the rare earth sites and frustration of interactions due to the unique configuration is responsible for the manifestation of spin glass transitions in these homologous systems

  10. Magnet-assisted device-level alignment for the fabrication of membrane-sandwiched polydimethylsiloxane microfluidic devices

    International Nuclear Information System (INIS)

    Lu, J-C; Liao, W-H; Tung, Y-C

    2012-01-01

    Polydimethylsiloxane (PDMS) microfluidic device is one of the most essential techniques that advance microfluidics research in recent decades. PDMS is broadly exploited to construct microfluidic devices due to its unique and advantageous material properties. To realize more functionalities, PDMS microfluidic devices with multi-layer architectures, especially those with sandwiched membranes, have been developed for various applications. However, existing alignment methods for device fabrication are mainly based on manual observations, which are time consuming, inaccurate and inconsistent. This paper develops a magnet-assisted alignment method to enhance device-level alignment accuracy and precision without complicated fabrication processes. In the developed alignment method, magnets are embedded into PDMS layers at the corners of the device. The paired magnets are arranged in symmetric positions at each PDMS layer, and the magnetic attraction force automatically pulls the PDMS layers into the aligned position during assembly. This paper also applies the method to construct a practical microfluidic device, a tunable chaotic micromixer. The results demonstrate the successful operation of the device without failure, which suggests the accurate alignment and reliable bonding achieved by the method. Consequently, the fabrication method developed in this paper is promising to be exploited to construct various membrane-sandwiched PDMS microfluidic devices with more integrated functionalities to advance microfluidics research. (paper)

  11. Biofeedback in Partial Weight Bearing: Usability of Two Different Devices from a Patient's and Physical Therapist's Perspective.

    Science.gov (United States)

    van Lieshout, Remko; Pisters, Martijn F; Vanwanseele, Benedicte; de Bie, Rob A; Wouters, Eveline J; Stukstette, Mirelle J

    2016-01-01

    Partial weight bearing is frequently instructed by physical therapists in patients after lower-limb trauma or surgery. The use of biofeedback devices seems promising to improve the patient's compliance with weight-bearing instructions. SmartStep and OpenGo-Science are biofeedback devices that provide real-time feedback. For a successful implementation, usability of the devices is a critical aspect and should be tested from a user's perspective. To describe the usability from the physical therapists' and a patients' perspective of Smartstep and OpenGo-Science to provide feedback on partial weight bearing during supervised rehabilitation of patients after lower-limb trauma or surgery. In a convergent mixed-methods design, qualitative and quantitative data were collected. Usability was subdivided into user performance, satisfaction and acceptability. Patients prescribed with partial weight bearing and their physical therapists were asked to use SmartStep and OpenGo-Science during supervised rehabilitation. Usability was qualitatively tested by a think-aloud method and a semi-structured interview and quantitatively tested by the System-Usability-Scale (SUS) and closed questions. For the qualitative data thematic content analyses were used. Nine pairs of physical therapists and their patients participated. The mean SUS scores for patients and physical therapists were for SmartStep 70 and 53, and for OpenGo-Science 79 and 81, respectively. Scores were interpreted with the Curved Grading Scale. The qualitative data showed that there were mixed views and perceptions from patients and physical therapists on satisfaction and acceptability. This study gives insight in the usability of two biofeedback devices from the patient's and physical therapist's perspective. The overall usability from both perspectives seemed to be acceptable for OpenGo-Science. For SmartStep, overall usability seemed only acceptable from the patient's perspective. The study findings could help

  12. Physical-Layer Security with Full-Duplex Transceivers and Multiuser Receiver at Eve

    DEFF Research Database (Denmark)

    Mahmood, Nurul Huda; Shafique Ansari, Imran; Popovski, Petar

    2017-01-01

    , leading researchers to study other possible applications that can accord higher gains. The potential of full-duplex communication in improving the physical-layer security of a communication link is investigated in this contribution. We specifically present a thorough analysis of the achievable ergodic...

  13. Enhanced optical-to-THz conversion efficiency of photoconductive antenna using dielectric nano-layer encapsulation

    Science.gov (United States)

    Gupta, Abhishek; Rana, Goutam; Bhattacharya, Arkabrata; Singh, Abhishek; Jain, Ravikumar; Bapat, Rudheer D.; Duttagupta, S. P.; Prabhu, S. S.

    2018-05-01

    Photoconductive antennas (PCAs) are among the most conventional devices used for emission as well as detection of terahertz (THz) radiation. However, due to their low optical-to-THz conversion efficiencies, applications of these devices in out-of-laboratory conditions are limited. In this paper, we report several factors of enhancement in THz emission efficiency from conventional PCAs by coating a nano-layer of dielectric (TiO2) on the active area between the electrodes of a semi-insulating GaAs-based device. Extensive experiments were done to show the effect of thicknesses of the TiO2 layer on the THz power enhancement with different applied optical power and bias voltages. Multiphysics simulations were performed to elucidate the underlying physics behind the enhancement of efficiency of the PCA. Additionally, this layer increases the robustness of the electrode gaps of the PCAs with high electrical insulation as well as protect it from external dust particles.

  14. Collisional boundary layer analysis for neoclassical toroidal plasma viscosity in tokamaks

    Czech Academy of Sciences Publication Activity Database

    Shaing, K.C.; Cahyna, Pavel; Bécoulet, M.; Park, J.-K.; Sabbagh, S.A.; Chu, M.S.

    2008-01-01

    Roč. 15, č. 8 (2008), 082506-1-7 ISSN 1070-664X Institutional research plan: CEZ:AV0Z20430508 Keywords : plasma boundary layers * plasma toroidal confinement * Tokamak devices Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.427, year: 2008 http://dx.doi.org/10.1063/1.2969434

  15. Devices for overcoming biological barriers: the use of physical forces to disrupt the barriers.

    Science.gov (United States)

    Mitragotri, Samir

    2013-01-01

    Overcoming biological barriers including skin, mucosal membranes, blood brain barrier as well as cell and nuclear membrane constitutes a key hurdle in the field of drug delivery. While these barriers serve the natural protective function in the body, they limit delivery of drugs into the body. A variety of methods have been developed to overcome these barriers including formulations, targeting peptides and device-based technologies. This review focuses on the use of physical methods including acoustic devices, electric devices, high-pressure devices, microneedles and optical devices for disrupting various barriers in the body including skin and other membranes. A summary of the working principles of these devices and their ability to enhance drug delivery is presented. Copyright © 2012. Published by Elsevier B.V.

  16. Low-frequency excess flux noise in superconducting devices

    Energy Technology Data Exchange (ETDEWEB)

    Kempf, Sebastian; Ferring, Anna; Fleischmann, Andreas; Enss, Christian [Kirchhoff-Institute for Physics, Heidelberg University (Germany)

    2016-07-01

    Low-frequency noise is a rather universal phenomenon and appears in physical, chemical, biological or even economical systems. However, there is often very little known about the underlying processes leading to its occurrence. In particular, the origin of low-frequency excess flux noise in superconducting devices has been an unresolved puzzle for many decades. Its existence limits, for example, the coherence time of superconducting quantum bits or makes high-precision measurements of low-frequency signals using SQUIDs rather challenging. Recent experiments suggest that low-frequency excess flux noise in Josephson junction based devices might be caused by the random reversal of interacting spins in surface layer oxides and in the superconductor-substrate interface. Even if it turns out to be generally correct, the underlying physical processes, i.e. the origin of these spins, their physical nature as well as the interaction mechanisms, have not been resolved so far. In this contribution we discuss recent measurements of low-frequency SQUID noise which we performed to investigate the origin of low-frequency excess flux noise in superconducting devices. Within this context we give an overview of our measurement techniques and link our data with present theoretical models and literature data.

  17. Ultra-thin fluoropolymer buffer layer as an anode stabilizer of organic light emitting devices

    International Nuclear Information System (INIS)

    Yang, Nam Chul; Lee, Jaeho; Song, Myung-Won; Ahn, Nari; Kim, Mu-Hyun; Lee, Songtaek; Chin, Byung Doo

    2007-01-01

    We have investigated the effect of thin fluoro-acrylic polymer as an anode stabilizer on the lifetime of an organic light emitting device (OLED). Surface chemical properties of commercial fluoropolymer, FC-722 (Fluorad(TM) of 3M), on indium-tin oxide (ITO) were characterized by x-ray photoemission spectroscopy. An OLED with 1 nm thick fluoropolymeric film showed identical brightness and efficiency behaviour and improved operational stability compared with the reference device with UV-O 3 treated ITO. The improvement in the lifetime was accompanied by the suppression of the voltage increase at the initial stage of constant-current driving, which can be attributed to the action of the FC-722 layer by smoothing the ITO surface. Fluoropolymer coating, therefore, improves the lifetime of the small molecular OLED by the simple and reliable anode-stabilizing process

  18. A new UV-curing elastomeric substrate for rapid prototyping of microfluidic devices

    Science.gov (United States)

    Alvankarian, Jafar; Yeop Majlis, Burhanuddin

    2012-03-01

    Rapid prototyping in the design cycle of new microfluidic devices is very important for shortening time-to-market. Researchers are facing the challenge to explore new and suitable substrates with simple and efficient microfabrication techniques. In this paper, we introduce and characterize a UV-curing elastomeric polyurethane methacrylate (PUMA) for rapid prototyping of microfluidic devices. The swelling and solubility of PUMA in different chemicals is determined. Time-dependent measurements of water contact angle show that the native PUMA is hydrophilic without surface treatment. The current monitoring method is used for measurement of the electroosmotic flow mobility in the microchannels made from PUMA. The optical, physical, thermal and mechanical properties of PUMA are evaluated. The UV-lithography and molding process is used for making micropillars and deep channel microfluidic structures integrated to the supporting base layer. Spin coating is characterized for producing different layer thicknesses of PUMA resin. A device is fabricated and tested for examining the strength of different bonding techniques such as conformal, corona treating and semi-curing of two PUMA layers in microfluidic application and the results show that the bonding strengths are comparable to that of PDMS. We also report fabrication and testing of a three-layer multi inlet/outlet microfluidic device including a very effective fluidic interconnect for application demonstration of PUMA as a promising new substrate. A simple micro-device is developed and employed for observing the pressure deflection of membrane made from PUMA as a very effective elastomeric valve in microfluidic devices.

  19. Layered Architecture for Quantum Computing

    Directory of Open Access Journals (Sweden)

    N. Cody Jones

    2012-07-01

    Full Text Available We develop a layered quantum-computer architecture, which is a systematic framework for tackling the individual challenges of developing a quantum computer while constructing a cohesive device design. We discuss many of the prominent techniques for implementing circuit-model quantum computing and introduce several new methods, with an emphasis on employing surface-code quantum error correction. In doing so, we propose a new quantum-computer architecture based on optical control of quantum dots. The time scales of physical-hardware operations and logical, error-corrected quantum gates differ by several orders of magnitude. By dividing functionality into layers, we can design and analyze subsystems independently, demonstrating the value of our layered architectural approach. Using this concrete hardware platform, we provide resource analysis for executing fault-tolerant quantum algorithms for integer factoring and quantum simulation, finding that the quantum-dot architecture we study could solve such problems on the time scale of days.

  20. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2005-01-01

    Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

  1. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer

    KAUST Repository

    Nayak, Pradipta K.

    2014-04-14

    We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n-and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.

  2. The role of the hole-extraction layer in determining the operational stability of a polycarbazole:fullerene bulk-heterojunction photovoltaic device

    Science.gov (United States)

    Bovill, E.; Scarratt, N.; Griffin, J.; Yi, H.; Iraqi, A.; Buckley, A. R.; Kingsley, J. W.; Lidzey, D. G.

    2015-02-01

    We have made a comparative study of the relative operational stability of bulk-heterojunction organic photovoltaic (OPV) devices utilising different hole transport layers (HTLs). OPV devices were fabricated based on a blend of the polymer PCDTBT with the fullerene PC70BM, and incorporated the different HTL materials PEDOT:PSS, MoOx and V2O5. Following 620 h of irradiation by light from a solar simulator, we find that devices using the PEDOT:PSS HTL retained the highest efficiency, having a projected T80 lifetime of 14 500 h.

  3. Efficiency enhancement in a single emission layer yellow organic light emitting device: Contribution of CIS/ZnS quantum dot

    International Nuclear Information System (INIS)

    Demir, Nuriye; Oner, Ilker; Varlikli, Canan; Ozsoy, Cihan; Zafer, Ceylan

    2015-01-01

    Electroluminescence (EL) efficiency from a single emission layer solution processed yellow emitting polymer, i.e. poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,10,3}-thiadiazole)] end-capped with dimethylphenyl (ADS233YE), is firstly enhanced by the optimization of stock polymer concentrations and the coating rates, and then with the addition of copper indium disulfide/zinc sulfide (CIS/ZnS) core/shell quantum dots (QDs). Using these bare core/shell QDs as the active layer in the studied device gave no EL at all. However, yellow EL with the maximum brightness of 56834 cd/m 2 , maximum current efficiency of 4.7 cd/A and maximum power efficiency of 2.3 lm/W is obtained from the device structure of indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/ADS233YE:0.4 wt.% CIS/ZnS QD/Ca/Al those of which correspond to approximately 4 and 2 folds of enhancements in the brightness and luminous and power efficiency values, respectively, compared to that of the device without CIS/ZnS. - Highlights: • Copper indium disulfide/zinc sulfide (CIS/ZnS) particles are synthesized. • Polymer light emitting diode performance of a yellow emitting polymer is enhanced. • The presence of CIS/ZnS in active layer enhanced the power efficiency two folds. • Optimum concentration of CIS/ZnS in polymer is 0.4 wt.%

  4. Efficiency enhancement in a single emission layer yellow organic light emitting device: Contribution of CIS/ZnS quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Demir, Nuriye; Oner, Ilker; Varlikli, Canan, E-mail: canan.varlikli@ege.edu.tr; Ozsoy, Cihan; Zafer, Ceylan

    2015-08-31

    Electroluminescence (EL) efficiency from a single emission layer solution processed yellow emitting polymer, i.e. poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,10,3}-thiadiazole)] end-capped with dimethylphenyl (ADS233YE), is firstly enhanced by the optimization of stock polymer concentrations and the coating rates, and then with the addition of copper indium disulfide/zinc sulfide (CIS/ZnS) core/shell quantum dots (QDs). Using these bare core/shell QDs as the active layer in the studied device gave no EL at all. However, yellow EL with the maximum brightness of 56834 cd/m{sup 2}, maximum current efficiency of 4.7 cd/A and maximum power efficiency of 2.3 lm/W is obtained from the device structure of indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/ADS233YE:0.4 wt.% CIS/ZnS QD/Ca/Al those of which correspond to approximately 4 and 2 folds of enhancements in the brightness and luminous and power efficiency values, respectively, compared to that of the device without CIS/ZnS. - Highlights: • Copper indium disulfide/zinc sulfide (CIS/ZnS) particles are synthesized. • Polymer light emitting diode performance of a yellow emitting polymer is enhanced. • The presence of CIS/ZnS in active layer enhanced the power efficiency two folds. • Optimum concentration of CIS/ZnS in polymer is 0.4 wt.%.

  5. Evaluation of physics-based numerical modelling for diverse design architecture of perovskite solar cells

    Science.gov (United States)

    Mishra, A. K.; Catalan, Jorge; Camacho, Diana; Martinez, Miguel; Hodges, D.

    2017-08-01

    Solution processed organic-inorganic metal halide perovskite based solar cells are emerging as a new cost effective photovoltaic technology. In the context of increasing the power conversion efficiency (PCE) and sustainability of perovskite solar cells (PSC) devices, we comprehensively analyzed a physics-based numerical modelling for doped and un-doped PSC devices. Our analytics emphasized the role of different charge carrier layers from the view point of interfacial adhesion and its influence on charge extraction rate and charge recombination mechanism. Morphological and charge transport properties of perovskite thin film as a function of device architecture are also considered to investigate the photovoltaic properties of PSC. We observed that photocurrent is dominantly influenced by interfacial recombination process and photovoltage has functional relationship with defect density of perovskite absorption layer. A novel contour mapping method to understand the characteristics of current density-voltage (J-V) curves for each device as a function of perovskite layer thickness provide an important insight about the distribution spectrum of photovoltaic properties. Functional relationship of device efficiency and fill factor with absorption layer thickness are also discussed.

  6. Physics considerations in MV-CBCT multi-layer imager design.

    Science.gov (United States)

    Hu, Yue-Houng; Fueglistaller, Rony; Myronakis, Marios E; Rottmann, Joerg; Wang, Adam; Shedlock, Daniel; Morf, Daniel; Baturin, Paul; Huber, Pascal; Star-Lack, Josh M; Berbeco, Ross I

    2018-05-30

    Megavoltage (MV) cone-beam computed tomography (CBCT) using an electronic portal imaging (EPID) offers advantageous features, including 3D mapping, treatment beam registration, high-z artifact suppression, and direct radiation dose calculation. Adoption has been slowed by image quality limitations and concerns about imaging dose. Developments in imager design, including pixelated scintillators, structured phosphors, inexpensive scintillation materials, and multi-layer imager (MLI) architecture have been explored to improve EPID image quality and reduce imaging dose. The present study employs a hybrid Monte Carlo and linear systems model to determine the effect of detector design elements, such as multi-layer architecture and scintillation materials. We follow metrics of image quality including modulation transfer function (MTF) and noise power spectrum (NPS) from projection images to 3D reconstructions to in-plane slices and apply a task based figure-of-merit, the ideal observer signal-to-noise ratio (d') to determine the effect of detector design on object detectability. Generally, detectability was limited by detector noise performance. Deploying an MLI imager with a single scintillation material for all layers yields improvement in noise performance and d' linear with the number of layers. In general, improving x-ray absorption using thicker scintillators results in improved DQE(0). However, if light yield is low, performance will be affected by electronic noise at relatively high doses, resulting in rapid image quality degradation. Maximizing image quality in a heterogenous MLI detector (i.e. multiple different scintillation materials) is most affected by limiting imager noise. However, while a second-order effect, maximizing total spatial resolution of the MLI detector is a balance between the intensity contribution of each layer against its individual MTF. So, while a thinner scintillator may yield a maximal individual-layer MTF, its quantum efficiency will

  7. Resistive switching memory properties of layer-by-layer assembled enzyme multilayers

    International Nuclear Information System (INIS)

    Baek, Hyunhee; Cho, Jinhan; Lee, Chanwoo; Lim, Kwang-il

    2012-01-01

    The properties of enzymes, which can cause reversible changes in currents through redox reactions in solution, are of fundamental and practical importance in bio-electrochemical applications. These redox properties of enzymes are often associated with their charge-trap sites. Here, we demonstrate that reversible changes in resistance in dried lysozyme (LYS) films can be generated by an externally applied voltage as a result of charge trap/release. Based on such changes, LYS can be used as resistive switching active material for nonvolatile memory devices. In this study, cationic LYS and anionic poly(styrene sulfonate) (PSS) layers were alternately deposited onto Pt-coated silicon substrates using a layer-by-layer assembly method. Then, top electrodes were deposited onto the top of LYS/PSS multilayers to complete the fabrication of the memory-like device. The LYS/PSS multilayer devices exhibited typical resistive switching characteristics with an ON/OFF current ratio above 10 2 , a fast switching speed of 100 ns and stable performance. Furthermore, the insertion of insulating polyelectrolytes (PEs) between the respective LYS layers significantly enhanced the memory performance of the devices showing a high ON/OFF current ratio of ∼10 6 and low levels of power consumption. (paper)

  8. Nanofluidics in two-dimensional layered materials: inspirations from nature.

    Science.gov (United States)

    Gao, Jun; Feng, Yaping; Guo, Wei; Jiang, Lei

    2017-08-29

    With the advance of chemistry, materials science, and nanotechnology, significant progress has been achieved in the design and application of synthetic nanofluidic devices and materials, mimicking the gating, rectifying, and adaptive functions of biological ion channels. Fundamental physics and chemistry behind these novel transport phenomena on the nanoscale have been explored in depth on single-pore platforms. However, toward real-world applications, one major challenge is to extrapolate these single-pore devices into macroscopic materials. Recently, inspired partially by the layered microstructure of nacre, the material design and large-scale integration of artificial nanofluidic devices have stepped into a completely new stage, termed 2D nanofluidics. Unique advantages of the 2D layered materials have been found, such as facile and scalable fabrication, high flux, efficient chemical modification, tunable channel size, etc. These features enable wide applications in, for example, biomimetic ion transport manipulation, molecular sieving, water treatment, and nanofluidic energy conversion and storage. This review highlights the recent progress, current challenges, and future perspectives in this emerging research field of "2D nanofluidics", with emphasis on the thought of bio-inspiration.

  9. Cognitive Security of Wireless Communication Systems in the Physical Layer

    Directory of Open Access Journals (Sweden)

    Mustafa Harun Yılmaz

    2017-01-01

    Full Text Available While the wireless communication systems provide the means of connectivity nearly everywhere and all the time, communication security requires more attention. Even though current efforts provide solutions to specific problems under given circumstances, these methods are neither adaptive nor flexible enough to provide security under the dynamic conditions which make the security breaches an important concern. In this paper, a cognitive security (CS concept for wireless communication systems in the physical layer is proposed with the aim of providing a comprehensive solution to wireless security problems. The proposed method will enable the comprehensive security to ensure a robust and reliable communication in the existence of adversaries by providing adaptive security solutions in the communication systems by exploiting the physical layer security from different perspective. The adaptiveness relies on the fact that radio adapts its propagation characteristics to satisfy secure communication based on specific conditions which are given as user density, application specific adaptation, and location within CS concept. Thus, instead of providing any type of new security mechanism, it is proposed that radio can take the necessary precautions based on these conditions before the attacks occur. Various access scenarios are investigated to enable the CS while considering these conditions.

  10. The Electric and Optical Properties of Doped Small Molecular Organic Light-Emitting Devices

    International Nuclear Information System (INIS)

    Kwang-Ohk Cheon

    2003-01-01

    Organic light-emitting devices (OLEDs) constitute a new and exciting emissive display technology. In general, the basic OLED structure consists of a stack of fluorescent organic layers sandwiched between a transparent conducting-anode and metallic cathode. When an appropriate bias is applied to the device, holes are injected from the anode and electrons from the cathode; some of the recombination events between the holes and electrons result in electroluminescence (EL). Until now, most of the efforts in developing OLEDs have focused on display applications, hence on devices within the visible range. However some organic devices have been developed for ultraviolet or infrared emission. Various aspects of the device physics of doped small molecular OLEDs were described and discussed. The doping layer thickness and concentration were varied systematically to study their effects on device performances, energy transfer, and turn-off dynamics. Low-energy-gap DCM2 guest molecules, in either α-NPD or DPVBi host layers, are optically efficient fluorophores but also generate deep carrier trap-sites. Since their traps reduce the carrier mobility, the current density decreases with increased doping concentration. At the same time, due to efficient energy transfer, the quantum efficiency of the devices is improved by light doping or thin doping thickness, in comparison with the undoped neat devices. However, heavy doping induces concentration quenching effects. Thus, the doping concentration and doping thickness may be optimized for best performance

  11. The Electric and Optical Properties of Doped Small Molecular Organic Light-Emitting Devices

    Energy Technology Data Exchange (ETDEWEB)

    Cheon, Kwang-Ohk [Iowa State Univ., Ames, IA (United States)

    2003-01-01

    Organic light-emitting devices (OLEDs) constitute a new and exciting emissive display technology. In general, the basic OLED structure consists of a stack of fluorescent organic layers sandwiched between a transparent conducting-anode and metallic cathode. When an appropriate bias is applied to the device, holes are injected from the anode and electrons from the cathode; some of the recombination events between the holes and electrons result in electroluminescence (EL). Until now, most of the efforts in developing OLEDs have focused on display applications, hence on devices within the visible range. However some organic devices have been developed for ultraviolet or infrared emission. Various aspects of the device physics of doped small molecular OLEDs were described and discussed. The doping layer thickness and concentration were varied systematically to study their effects on device performances, energy transfer, and turn-off dynamics. Low-energy-gap DCM2 guest molecules, in either α-NPD or DPVBi host layers, are optically efficient fluorophores but also generate deep carrier trap-sites. Since their traps reduce the carrier mobility, the current density decreases with increased doping concentration. At the same time, due to efficient energy transfer, the quantum efficiency of the devices is improved by light doping or thin doping thickness, in comparison with the undoped neat devices. However, heavy doping induces concentration quenching effects. Thus, the doping concentration and doping thickness may be optimized for best performance.

  12. Analysis of physical factors on chosen properties of anodic alumina oxide (AAO layers and environment

    Directory of Open Access Journals (Sweden)

    M. Gombár

    2016-10-01

    Full Text Available In the contribution is evaluated an impact of physical factors of anodizing process, namely the temperature of an electrolyte, anodizing time and voltage, on the change of values of Vickers microhardness and thickness of formed layer of experimental materials Al99∙5. By increasing of electrolyte temperature, the values of layer microhardness and thickness layer increase, namely about 0.78 % at the increasing of electrolyte temperature by 1 °C. By lengthening of anodizing time grows the value of layer thickness, but only to the value of the critical deposition time, when chemical dissolution of the layer start to be more prominent. By voltage increasing, values of layer thickness and micro-hardness are increased in the range of the used experimental values.

  13. Physical layer impairments tolerance based lightpath provision in software defined optical network

    Institute of Scientific and Technical Information of China (English)

    Zhao Xianlong; Xu Xianze; Bai Huifeng

    2017-01-01

    As all-optical networks grow with ever increasing ultra-high speed, the communication quality suffers seriously from physical layer impairments ( PLIs) .The same problem still exists in software defined optical network ( SDON) controlled by OpenFlow.Aimed to solve this problem, a PLIs tol-erance based lightpath provision scheme is proposed for OpenFlow controlled optical networks.This proposed approach not only takes the OSNR model to represent those linear PLIs factors, but also in-troduces those nonlinear factors into the OSNR model.Thus, the proposed scheme is able to cover most PLIs factors of each optical link and conduct optical lightpath provison with better communica-tion quality.Moreover, PLIs tolerance model is also set up and considered in this work with some necessary extension to OpenFlow protocols to achieve better compatibility between physical layer im-pairments factors and various services connections.Simulation results show that the proposed scheme is able to get better performance in terms of packet loss rate and connection setup time.

  14. Reactor core performance estimating device

    International Nuclear Information System (INIS)

    Tanabe, Akira; Yamamoto, Toru; Shinpuku, Kimihiro; Chuzen, Takuji; Nishide, Fusayo.

    1995-01-01

    The present invention can autonomously simplify a neural net model thereby enabling to conveniently estimate various amounts which represents reactor core performances by a simple calculation in a short period of time. Namely, a reactor core performance estimation device comprises a nerve circuit net which divides the reactor core into a large number of spacial regions, and receives various physical amounts for each region as input signals for input nerve cells and outputs estimation values of each amount representing the reactor core performances as output signals of output nerve cells. In this case, the nerve circuit net (1) has a structure of extended multi-layered model having direct coupling from an upper stream layer to each of downstream layers, (2) has a forgetting constant q in a corrected equation for a joined load value ω using an inverse error propagation method, (3) learns various amounts representing reactor core performances determined using the physical models as teacher signals, (4) determines the joined load value ω decreased as '0' when it is to less than a predetermined value upon learning described above, and (5) eliminates elements of the nerve circuit net having all of the joined load value decreased to 0. As a result, the neural net model comprises an autonomously simplifying means. (I.S.)

  15. Radiation safety in operation with morally and physically obsolete radiological devices is a imperative of the day

    International Nuclear Information System (INIS)

    Rosca, A.; Grajdieru, L.; Coretchi, L.

    2009-01-01

    The activity with superannuated morally and physically radio-diagnostic device needs an increased attention to perform obligatory monthly technical revision, annual and every quarter (in radiotherapy) dosimetry and correctness of technical parameters (KV and exposition time), estimation of all superannuated morally and physically dosimeters, which are still utilized. The most efficient measure of radioprotection suitable assurance in activity with such devices is their urgent renovation. (authors)

  16. A Cross-Layer Biometric Recognition System for Mobile IoT Devices

    Directory of Open Access Journals (Sweden)

    Shayan Taheri

    2018-02-01

    Full Text Available A biometric recognition system is one of the leading candidates for the current and the next generation of smart visual systems. The visual system is the engine of the surveillance cameras that have great importance for intelligence and security purposes. These surveillance devices can be a target of adversaries for accomplishing various malicious scenarios such as disabling the camera in critical times or the lack of recognition of a criminal. In this work, we propose a cross-layer biometric recognition system that has small computational complexity and is suitable for mobile Internet of Things (IoT devices. Furthermore, due to the involvement of both hardware and software in realizing this system in a decussate and chaining structure, it is easier to locate and provide alternative paths for the system flow in the case of an attack. For security analysis of this system, one of the elements of this system named the advanced encryption standard (AES is infected by four different Hardware Trojansthat target different parts of this module. The purpose of these Trojans is to sabotage the biometric data that are under process by the biometric recognition system. All of the software and the hardware modules of this system are implemented using MATLAB and Verilog HDL, respectively. According to the performance evaluation results, the system shows an acceptable performance in recognizing healthy biometric data. It is able to detect the infected data, as well. With respect to its hardware results, the system may not contribute significantly to the hardware design parameters of a surveillance camera considering all the hardware elements within the device.

  17. Preparation and biological evaluation of a fibroblast growth factor-2-apatite composite layer on polymeric material

    Energy Technology Data Exchange (ETDEWEB)

    Sasaki, Kenkichi; Kamitakahara, Masanobu; Ioku, Koji [Graduate School of Environmental Studies, Tohoku University, Aoba 6-6-20, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Oyane, Ayako [Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 (Japan); Hyodo, Koji [Human Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564 (Japan); Ito, Atsuo; Sogo, Yu, E-mail: a-oyane@aist.go.j [Human Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Central 6, 1-1-1, Higashi, Tsukuba, Ibaraki 305-8566 (Japan)

    2010-12-15

    A polymeric percutaneous device with good biocompatibility and resistance to bacterial infection is required clinically. In this study, a fibroblast growth factor-2 (FGF-2)-hydroxyapatite (HAp) composite layer (FHAp layer) was formed on the surfaces of ethylene-vinyl alcohol copolymer (EVOH) specimens using a coating process in a supersaturated calcium phosphate solution supplemented with FGF-2. FGF-2 in the FHAp layer retained its biological activity to promote proliferation of fibroblasts. The EVOH specimens coated with HAp and FHAp layers were percutaneously implanted in the scalp of rats. Not only the HAp layer but also the FHAp layer showed good biocompatibility, and FGF-2 showed no harmful effects on the skin tissue responses to the implanted specimen as long as 14 d. No significantly higher infection resistance was verified for the FHAp layer over the HAp layer, although an FHAp layer coated on a metallic percutaneous device for bone fixation demonstrated higher resistance to bacterial infection over an HAp layer in the previous study. The efficacy of FHAp layers coated on percutaneous implants in resistance to bacterial infection depends on physical factors including fixation condition, stiffness and movement of implants.

  18. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

    Science.gov (United States)

    Moustakas, Theodore D.; Paiella, Roberto

    2017-10-01

    This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

  19. Asphaltene based photovoltaic devices

    Science.gov (United States)

    Chianelli, Russell R.; Castillo, Karina; Gupta, Vipin; Qudah, Ali M.; Torres, Brenda; Abujnah, Rajib E.

    2016-03-22

    Photovoltaic devices and methods of making the same, are disclosed herein. The cell comprises a photovoltaic device that comprises a first electrically conductive layer comprising a photo-sensitized electrode; at least one photoelectrochemical layer comprising metal-oxide particles, an electrolyte solution comprising at least one asphaltene fraction, wherein the metal-oxide particles are optionally dispersed in a surfactant; and a second electrically conductive layer comprising a counter-electrode, wherein the second electrically conductive layer comprises one or more conductive elements comprising carbon, graphite, soot, carbon allotropes or any combinations thereof.

  20. [Multiple emissions in organic electroluminescent device using a mixed layer as an emitter].

    Science.gov (United States)

    Zhu, Wen-qing; Wu, You-zhi; Zheng, Xin-you; Jiang, Xue-yin; Zhang, Zhi-lin; Sun, Run-guang; Xu, Shao-hong

    2005-04-01

    A organic electroluminescent device has been fabricated by using a mixed layer as an emitter. The configuration of the device is ITO/TPD/TPD: PBD(equimole)/PBD/A1, in which TPD (N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine) and PBD (2-(4'-biphenyl)-5-(4''-tert-butylphenyl)-1,3,4-oxadiazole) are used as hole transport material and electron transport material, respectively. Broad and red-shifted electroluminescent spectra related to the fluorescence of constituent materials were observed. It is suggested that the monomer, exciplex and electroplex emissions are simultaneously involved in EL spectra by comparison of the EL with the PL spectra and decomposition of the EL spectrum. The type of exciplex is the interaction between the excited state TPD (TPD*) and PBD in the ground state, and the type of electroplex is a (D+-A-)* complex by cross-recombination of hole on the charged hole transport molecule (D+) and electron on the charged electron transport molecule (A-). All types of excited states show different formation mechanisms and recombination processes under electric field. The change of emission strengths from monomer and excited complexes lead to a blue-shift of the emissive spectra with an increasing electric field. The maximum luminance and external quantum efficiency of this device are 240 cd x (cm2)(-1) and 0.49%, respectively. The emissions from exciplex or electroplex formation at the organic solid interface generally present a broad and red-shifted emissive band, providing an effective method for tuning of emission color in organic electroluminescent devices.

  1. Efficient single light-emitting layer pure blue phosphorescent organic light-emitting devices with wide gap host and matched interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Yunlong; Zhou, Liang, E-mail: zhoul@ciac.ac.cn; Cui, Rongzhen; Li, Yanan; Zhao, Xuesen; Zhang, Hongjie, E-mail: hongjie@ciac.ac.cn

    2015-12-15

    In this work, we report the highly efficient pure blue electroluminescent (EL) device based on bis[(3,5-difluoro-4-cyanophenyl)pyridine]picolinate iridium(III) (FCNIrpic) doped 9-(4-tert-Butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole (CzSi) film. The matched energy levels of FCNIrpic and CzSi are helpful in facilitating the trapping of carriers, while the high triplet energy of CzSi can well avoid the undesired reverse energy transfer. More importantly, the injection of holes was further accelerated by inserting 5 nm 4,4′,4″-Tri(9-carbazoyl)triphenylamine (TcTa) film between hole transport layer and lighting-emitting layer (EML) as interlayer. Consequently, EL performances were significantly enhanced attributed to wider recombination zone and better balance of holes and electrons. Interestingly, single-EML device displayed higher performances than those of double-EMLs device. Finally, pure blue EL device with the structure of ITO/MoO{sub 3} (3 nm)/TAPC (40 nm)/TcTa (5 nm)/FCNIrpic (20%): CzSi (30 nm)/TmPyPB (40 nm)/LiF (1 nm)/Al (100 nm) realized the maximum brightness, current efficiency, power efficiency and external quantum efficiency up to 12,505 cd/m{sup 2}, 36.20 cd/A, 28.42 lm/W and 16.9%, respectively. Even at the high brightness of 1000 cd/m{sup 2}, current efficiency and external quantum efficiency up to 17.40 cd/A and 8.1%, respectively, can be retained by the same device.

  2. Layer-by-Layer Enabled Nanomaterials for Chemical Sensing and Energy Conversion

    Science.gov (United States)

    Paterno, Leonardo G.; Soler, Maria A. G.

    2013-06-01

    The layer-by-layer (LbL) technique is a wet chemical method for the assembly of ultrathin films, with thicknesses up to 100 nm. This method is based on the successive transfer of molecular layers to a solid substrate that is dipped into cationic and anionic solutions in an alternating fashion. The adsorption is mainly driven by electrostatic interactions so that many molecular and nanomaterial systems can be engineered under this method. Moreover, it is inexpensive, can be easily performed, and does not demand sophisticated equipment or clean rooms. The most explored use of the LbL technique is to build up molecular devices for chemical sensing and energy conversion. Both applications require ultrathin films where specific elements must be organized with high control of thickness and spatial distribution, preferably in the nanolength and mesolength scales. In chemical sensors, the LbL technique is employed to assemble specific sensoactive materials such as conjugated polymers, enzymes, and immunological elements onto appropriated electrodes. Molecular recognition events are thus transduced by the assembled sensoactive layer. In energy-conversion devices, the LbL technique can be employed to fabricate different device's parts including electrodes, active layers, and auxiliary layers. In both applications, the devices' performance can be fully modulated and improved by simply varying film thickness and molecular architecture. The present review article highlights the main features of the LbL technique and provides a brief description of different (bio)chemical sensors, solar cells, and organic light-emitting diodes enabled by the LbL approach.

  3. Performance improvement of MEH-PPV:PCBM solar cells using bathocuproine and bathophenanthroline as the buffer layers

    International Nuclear Information System (INIS)

    Liu Xiao Dong; Zhao Su-Ling; Xu Zheng; Zhang Fu-Jun; Zhang Tian-Hui; Gong Wei; Yan Guang; Kong Chao; Wang Yong-Sheng; Xu Xu-Rong

    2011-01-01

    In this work, bathocuproine (BCP) and bathophenanthroline (Bphen), commonly used in small-molecule organic solar cells (OSCs), are adopted as the buffer layers to improve the performance of the polymer solar cells (PSCs) based on poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV): [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) bulk heterojunction. By inserting BCP or Bphen between the active layer and the top cathode, all the performance parameters are dramatically improved. The power conversion efficiency is increased by about 70% and 120% with 5-nm BCP and 12-nm Bphen layers, respectively, when compared with that of the devices without any buffer layer. The performance enhancement is attributed to BCP or Bphen (i) increasing the optical field, and hence the absorption in the active layer, (ii) effectively blocking the excitons generated in MEH-PPV from quenching at organic/aluminum (Al) interface due to the large band-gap of BCP or Bphen, which results in a significant reduction in series resistance (R s ), and (iii) preventing damage to the active layer during the metal deposition. Compared with the traditional device using LiF as the buffer layer, the BCP-based devices show a comparable efficiency, while the Bphen-based devices show a much larger efficiency. This is due to the higher electron mobility in Bphen than that in BCP, which facilitates the electron transport and extraction through the buffer layer to the cathode. (interdisciplinary physics and related areas of science and technology)

  4. Digital to analog resistive switching transition induced by graphene buffer layer in strontium titanate based devices.

    Science.gov (United States)

    Wan, Tao; Qu, Bo; Du, Haiwei; Lin, Xi; Lin, Qianru; Wang, Da-Wei; Cazorla, Claudio; Li, Sean; Liu, Sidong; Chu, Dewei

    2018-02-15

    Resistive switching behaviour can be classified into digital and analog switching based on its abrupt and gradual resistance change characteristics. Realizing the transition from digital to analog switching in the same device is essential for understanding and controlling the performance of the devices with various switching mechanisms. Here, we investigate the resistive switching in a device made with strontium titanate (SrTiO 3 ) nanoparticles using X-ray diffractometry, scanning electron microscopy, Raman spectroscopy, and direct electrical measurements. It is found that the well-known rupture/formation of Ag filaments is responsible for the digital switching in the device with Ag as the top electrode. To modulate the switching performance, we insert a reduced graphene oxide layer between SrTiO 3 and the bottom FTO electrode owing to its good barrier property for the diffusion of Ag ions and high out-of-plane resistance. In this case, resistive switching is changed from digital to analog as determined by the modulation of interfacial resistance under applied voltage. Based on that controllable resistance, potentiation and depression behaviours are implemented as well. This study opens up new ways for the design of multifunctional devices which are promising for memory and neuromorphic computing applications. Copyright © 2017 Elsevier Inc. All rights reserved.

  5. Future perspectives for spintronic devices

    International Nuclear Information System (INIS)

    Hirohata, Atsufumi; Takanashi, Koki

    2014-01-01

    Spintronics is one of the emerging research fields in nanotechnology and has been growing very rapidly. Studies of spintronics were started after the discovery of giant magnetoresistance in 1988, which utilized spin-polarized electron transport across a non-magnetic metallic layer. Within 10 years, this discovery had been implemented into hard disk drives, the most common storage media, followed by recognition through the award of the Nobel Prize for Physics 19 years later. We have never experienced such fast development in any scientific field. Spintronics research is now moving into second-generation spin dynamics and beyond. In this review, we first examine the historical advances in spintronics together with the background physics, and then describe major device applications. (topical review)

  6. Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

    Science.gov (United States)

    Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo; Peng, Yingquan

    2013-12-01

    Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs.

  7. Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Peng, Yingquan, E-mail: yqpeng@lzu.edu.cn [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

    2013-12-28

    Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs.

  8. Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

    International Nuclear Information System (INIS)

    Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo; Peng, Yingquan

    2013-01-01

    Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs

  9. New Experiments on Wave Physics with a Simply Modified Ripple Tank

    Science.gov (United States)

    Logiurato, Fabrizio

    2014-01-01

    The ripple tank is one of the physics education devices most appreciated by teachers and students. It allows one to visualize various phenomena related to wave physics in an effective and enthralling way. Usually this apparatus consists of a tank with a transparent bottom that is filled with a thin layer of water. A source of light illuminates the…

  10. Atomic layer deposition of HfO{sub 2} for integration into three-dimensional metal-insulator-metal devices

    Energy Technology Data Exchange (ETDEWEB)

    Assaud, Loic [Aix Marseille Univ, CNRS, CINAM, Marseille (France); ICMMO-ERIEE, Universite Paris-Sud / Universite Paris-Saclay, CNRS, Orsay (France); Pitzschel, Kristina; Barr, Maissa K.S.; Petit, Matthieu; Hanbuecken, Margrit; Santinacci, Lionel [Aix Marseille Univ, CNRS, CINAM, Marseille (France); Monier, Guillaume [Universite Clermont Auvergne, Universite Blaise Pascal, CNRS, Institut Pascal, Clermont-Ferrand (France)

    2017-12-15

    HfO{sub 2} nanotubes have been fabricated via a template-assisted deposition process for further use in three-dimensional metal-insulator-metal (MIM) devices. HfO{sub 2} thin layers were grown by Atomic Layer Deposition (ALD) in anodic alumina membranes (AAM). The ALD was carried out using tetrakis(ethylmethylamino)hafnium and water as Hf and O sources, respectively. Long exposure durations to the precursors have been used to maximize the penetration depth of the HfO{sub 2} layer within the AAM and the effect of the process temperature was investigated. The morphology, the chemical composition, and the crystal structure were studied as a function of the deposition parameters using transmission and scanning electron microscopies, X-ray photoelectron spectroscopy, and X-ray diffraction, respectively. As expected, the HfO{sub 2} layers grown at low-temperature (T = 150 C) were amorphous, while for a higher temperature (T = 250 C), polycrystalline films were observed. The electrical characterizations have shown better insulating properties for the layers grown at low temperature. Finally, TiN/HfO{sub 2}/TiN multilayers were grown in an AAM as proof-of-concept for three-dimensional MIM nanostructures. (orig.)

  11. Structural and physical properties of a novel misfit-layered cobalt oxide (CaOH)1.14CoO2

    International Nuclear Information System (INIS)

    Isobe, Masaaki; Shizuya, Mitsuyuki; Takayama-Muromachi, Eiji

    2007-01-01

    We have studied crystal structure and physical properties of a new layered cobalt oxide (CaOH) 1.14 CoO 2 . The compound is a composite crystal which consists of two interpenetrating subsystems of the CdI 2 -type CoO 2 layer and the rock-salt-type double CaOH atomic layer. The two subsystems have incommensurate periodicity along the a-axis, resulting in modulated crystal structure due to the inter-subsystem interaction. We found that the observed physical properties originate in the electronic state with a 'low-carrier-density limit' in the cobalt t 2g band

  12. Mobile health: a synopsis and comment on "Increasing physical activity with mobile devices: a meta-analysis".

    Science.gov (United States)

    Johnston, Winter; Hoffman, Sara; Thornton, Louise

    2014-03-01

    We offer a synopsis and commentary on J. Fanning and colleagues' article "Increasing Physical Activity with Mobile Devices: A Meta-Analysis" published in the Journal of Medical Internet Research. Although regular physical activity has a range of benefits, very few adults in the USA meet recommended guidelines for daily physical activity. The meta-analysis of Fanning et al. (2012) aimed to synthesize the results of research using mobile devices to increase physical activity. Their review identified 11 studies that used mobile technologies, including short message service (SMS), apps, or personal digital assistant (PDA) to improve physical activity behaviors among participants. Fanning et al. conclude that while literature in this area is limited to date, there is initial support for the efficacy of mobile-based interventions for improving physical activity. Included studies varied greatly, and the majority used only SMS to influence physical behaviors, meaning generalization of results to other forms of mobile technologies may be premature. This review does, however, provide a foundation for understanding how mobile-based interventions may be used efficaciously for the development of future interventions to improve health behaviors.

  13. Photovoltaic device

    Energy Technology Data Exchange (ETDEWEB)

    Reese, Jason A; Keenihan, James R; Gaston, Ryan S; Kauffmann, Keith L; Langmaid, Joseph A; Lopez, Leonardo; Maak, Kevin D; Mills, Michael E; Ramesh, Narayan; Teli, Samar R

    2017-03-21

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  14. Photovoltaic device

    Science.gov (United States)

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-06-02

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  15. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    Science.gov (United States)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  16. A Novel Wearable Device for Food Intake and Physical Activity Recognition

    Directory of Open Access Journals (Sweden)

    Muhammad Farooq

    2016-07-01

    Full Text Available Presence of speech and motion artifacts has been shown to impact the performance of wearable sensor systems used for automatic detection of food intake. This work presents a novel wearable device which can detect food intake even when the user is physically active and/or talking. The device consists of a piezoelectric strain sensor placed on the temporalis muscle, an accelerometer, and a data acquisition module connected to the temple of eyeglasses. Data from 10 participants was collected while they performed activities including quiet sitting, talking, eating while sitting, eating while walking, and walking. Piezoelectric strain sensor and accelerometer signals were divided into non-overlapping epochs of 3 s; four features were computed for each signal. To differentiate between eating and not eating, as well as between sedentary postures and physical activity, two multiclass classification approaches are presented. The first approach used a single classifier with sensor fusion and the second approach used two-stage classification. The best results were achieved when two separate linear support vector machine (SVM classifiers were trained for food intake and activity detection, and their results were combined using a decision tree (two-stage classification to determine the final class. This approach resulted in an average F1-score of 99.85% and area under the curve (AUC of 0.99 for multiclass classification. With its ability to differentiate between food intake and activity level, this device may potentially be used for tracking both energy intake and energy expenditure.

  17. Physical protection of power reactors

    International Nuclear Information System (INIS)

    Darby, J.L.

    1979-01-01

    Sandia Laboratories has applied a systematic approach to designing physical protection systems for nuclear facilities to commercial light-water reactor power plants. A number of candidate physical protection systems were developed and evaluated. Focus is placed on the design of access control subsystems at each of three plant layers: the protected area perimeter, building surfaces, and vital areas. Access control refers to barriers, detectors, and entry control devices and procedures used to keep unauthorized personnel and contraband out of the plant, and to control authorized entry into vital areas within the plant

  18. Time-difference imaging of magnetic induction tomography in a three-layer brain physical phantom

    International Nuclear Information System (INIS)

    Liu, Ruigang; Li, Ye; Fu, Feng; You, Fusheng; Shi, Xuetao; Dong, Xiuzhen

    2014-01-01

    Magnetic induction tomography (MIT) is a contactless and noninvasive technique to reconstruct the conductivity distribution in a human cross-section. In this paper, we want to study the feasibility of imaging the low-contrast perturbation and small volume object in human brains. We construct a three-layer brain physical phantom which mimics the real conductivity distribution of brains by introducing an artificial skull layer. Using our MIT data acquisition system on this phantom and differential algorithm, we have obtained a series of reconstructed images of conductivity perturbation objects. All of the conductivity perturbation objects in the brain phantom can be clearly distinguished in the reconstructed images. The minimum detectable conductivity difference between the object and the background is 0.03 S m −1  (12.5%). The minimum detectable inner volume of the objects is 3.4 cm 3 . The three-layer brain physical phantom is able to simulate the conductivity distribution of the main structures of a human brain. The images of the low-contrast perturbation and small volume object show the prospect of MIT in the future. (paper)

  19. Elimination device for decontaminated surface layers

    International Nuclear Information System (INIS)

    Yoshikawa, Kozo.

    1983-01-01

    Purpose: To conduct efficient decontamination injecting solid carbon dioxide particles at a high speed by using a simple and compact device. Constitution: Liquid carbon dioxide is injected from a first vessel containing liquid carbon dioxide by way of a carbon dioxide supply tube to a solid carbon dioxide particle jetting device. The liquid carbon dioxide is partially converted into fine solid carbon dioxide particles due to the temperature reduction caused by adiabatic expansion of the gaseous carbon dioxide in an expansion space for the gaseous carbon dioxide formed in the jetting device and arrives at a solid carbon dioxide injection nozzle in communication with the expansion space. Then, the fine solid carbon dioxide particles are further cooled and accelerated by the nitrogen gas jetted out from a nitrogen gas nozzle at the top of a nitrogen gas supply tube in communication with a second vessel containing liquid nitrogen disposed within the nozzle, and jetted out from the solid carbon dioxide injection nozzle to collide against the surface to be decontaminated and eliminate the surface contamination. (Seki, T.)

  20. The Effect of Donor and Nonfullerene Acceptor Inhomogeneous Distribution within the Photoactive Layer on the Performance of Polymer Solar Cells with Different Device Structures

    Directory of Open Access Journals (Sweden)

    Yaping Wang

    2017-11-01

    Full Text Available Due to the inhomogeneous distribution of donor and acceptor materials within the photoactive layer of bulk heterojunction organic solar cells (OSCs, proper selection of a conventional or an inverted device structure is crucial for effective exciton dissociation and charge transportation. Herein, we investigate the donor and acceptor distribution within the non-fullerene photoactive layer based on PBDTTT-ET:IEICO by time-of-flight secondary-ion mass spectroscopy (TOF-SIMS and scanning Kelvin probe microscopy (SKPM, indicating that more IEICO enriches on the surface of the photoactive layer while PBDTTT-ET distributes homogeneously within the photoactive layer. To further understand the effect of the inhomogeneous component distribution on the photovoltaic performance, both conventional and inverted OSCs were fabricated. As a result, the conventional device shows a power conversion efficiency (PCE of 8.83% which is 41% higher than that of inverted one (6.26%. Eventually, we employed nickel oxide (NiOx instead of PEDOT:PSS as anode buffer layer to further enhance the stability and PCE of OSCs with conventional structure, and a promising PCE of 9.12% is achieved.

  1. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    Energy Technology Data Exchange (ETDEWEB)

    Mikhelashvili, V.; Padmanabhan, R.; Eisenstein, G. [Electrical Engineering Department, Technion, Haifa 3200 (Israel); Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel); Meyler, B.; Yofis, S.; Weindling, S.; Salzman, J. [Electrical Engineering Department, Technion, Haifa 3200 (Israel); Atiya, G.; Cohen-Hyams, Z.; Kaplan, W. D. [Department of Material Science and Engineering, Technion, Haifa 3200 (Israel); Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel); Ankonina, G. [Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel); Photovoltaic Laboratory, Technion, Haifa 3200 (Israel)

    2015-10-07

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

  2. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    International Nuclear Information System (INIS)

    Mikhelashvili, V.; Padmanabhan, R.; Eisenstein, G.; Meyler, B.; Yofis, S.; Weindling, S.; Salzman, J.; Atiya, G.; Cohen-Hyams, Z.; Kaplan, W. D.; Ankonina, G.

    2015-01-01

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology

  3. The medical physics of ventricular assist devices

    International Nuclear Information System (INIS)

    Wood, Houston G; Throckmorton, Amy L; Untaroiu, Alexandrina; Song Xinwei

    2005-01-01

    Millions of patients, from infants to adults, are diagnosed with congestive heart failure each year all over the world. A limited number of donor hearts available for these patients results in a tremendous demand for alternative, supplemental circulatory support in the form of artificial heart pumps or ventricular assist devices (VADs). The development procedure for such a device requires careful consideration of biophysical factors, such as biocompatibility, haemolysis, thrombosis, implantability, physiologic control feasibility and pump performance. Conventional pump design equations based on Newton's law and computational fluid dynamics (CFD) are readily used for the initial design of VADs. In particular, CFD can be employed to predict the pressure-flow performance, hydraulic efficiencies, flow profile through the pump, stress levels and biophysical factors, such as possible blood cell damage. These computational flow simulations may involve comprehensive steady and transient flow analyses. The transient simulations involve time-varying boundary conditions and virtual modelling of the impeller rotation in the blood pumps. After prototype manufacture, laser flow measurements with sophisticated optics and mock circulatory flow loop testing assist with validation of pump design and identification of irregular flow patterns for optimization. Additionally, acute and chronic animal implants illustrate the blood pump's ability to support life physiologically. These extensive design techniques, coupled with fundamental principles of physics, ensure a reliable and effective VAD for thousands of heart failure patients each year

  4. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    KAUST Repository

    Wang, Zhenwei

    2015-04-20

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

  5. On the physics of relativistic double layers

    International Nuclear Information System (INIS)

    Carlqvist, P.

    1982-06-01

    A model of a strong, time-independent, and relativistic double layer is studied. Besides double layers having the electric field parallel to the current the model also describes a certain type of oblique double layers. The 'Langmuir condition' (ratio of ion current density to electron current density) as well as an expression for the potential drop of the double layer are derived. Furthermore, the distribution of charged particles, electric field, and potential within the double layer are clarified and discussed. It is found that the properties of relativistic double layers differ substantially from the properties of corresponding non-relativistic double layers. (Author)

  6. Slot-Die-Coated V2O5 as Hole Transport Layer for Flexible Organic Solar Cells and Optoelectronic Devices

    DEFF Research Database (Denmark)

    Beliatis, Michail; Helgesen, Martin; Garcia Valverde, Rafael

    2016-01-01

    Vanadium pentoxide has been proposed as a good alternative hole transport layer for improving device lifetime of organic photovoltaics. The article presents a study on the optimization of slot-die-coated vanadium oxide films produced with a roll coating machine with the aim of achieving scalable ...

  7. Integrated Optical lightguide device

    NARCIS (Netherlands)

    Heideman, Rene; Lambeck, Paul; Veldhuis, G.J.

    2005-01-01

    In an integrated optical lightguide device including a light-transmitting core layer, an inclusion or buffer layer, and an active or cladding layer. The cladding layer is divided into segments. Groups of different segments exhibit different refractive indices, light intensity profiles or different

  8. Integrated Optical lightguide device

    NARCIS (Netherlands)

    Heideman, Rene; Lambeck, Paul; Veldhuis, G.J.

    2000-01-01

    In an integrated optical lightguide device including a light-transmitting core layer, an inclusion or buffer layer, and an active or cladding layer. The cladding layer is divided into segments. Groups of different segments exhibit different refractive indices, light intensity profiles or different

  9. Ion-beam synthesis of Ge{sub x}Si{sub 1-x} strained layers for high speed electronic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Elliman, R.G.; Jiang, H.; Wong, W.C.; Kringhoj, P. [Australian National Univ., Canberra, ACT (Australia)

    1996-12-31

    It is shown that Ge{sub x}S{sub 1-x} strained layers can be fabricated by Ge implantation and solid-phase epitaxy and that the use of these layers can improve the performance of electronic devices. Several materials science issues are addressed, including the effect of Ge on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The process is demonstrated for metal-oxide-semiconductor field-effect-transistors (MOSFETs). 6 refs., 5 figs.

  10. Ion-beam synthesis of Ge{sub x}Si{sub 1-x} strained layers for high speed electronic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Elliman, R G; Jiang, H; Wong, W C; Kringhoj, P [Australian National Univ., Canberra, ACT (Australia)

    1997-12-31

    It is shown that Ge{sub x}S{sub 1-x} strained layers can be fabricated by Ge implantation and solid-phase epitaxy and that the use of these layers can improve the performance of electronic devices. Several materials science issues are addressed, including the effect of Ge on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The process is demonstrated for metal-oxide-semiconductor field-effect-transistors (MOSFETs). 6 refs., 5 figs.

  11. 2D Effective Electron Mass at the Fermi Level in Accumulation and Inversion Layers of MOSFET Nano Devices.

    Science.gov (United States)

    Singh, S L; Singh, S B; Ghatak, K P

    2018-04-01

    In this paper an attempt is made to study the 2D Fermi Level Mass (FLM) in accumulation and inversion layers of nano MOSFET devices made of nonlinear optical, III-V, ternary, Quaternary, II-VI, IV-VI, Ge and stressed materials by formulating 2D carrier dispersion laws on the basis of k → ⋅ p → ⋅ formalism and considering the energy band constants of a particular material. It is observed taking accumulation and inversion layers of Cd3As2, CdGeAs2, InSb, Hg1-xCdxTe and In1-xGaxAsyP1-y lattice matched to InP, CdS, GaSb and Ge as examples that the FLM depends on sub band index for nano MOSFET devices made of Cd3As2 and CdGeAs2 materials which is the characteristic features such 2D systems. Besides, the FLM depends on the scattering potential in all the cases and the same mass changes with increasing surface electric field. The FLM exists in the band gap which is impossible without heavy doping.

  12. Fabrication of integrated metallic MEMS devices

    DEFF Research Database (Denmark)

    Yalcinkaya, Arda Deniz; Ravnkilde, Jan Tue; Hansen, Ole

    2002-01-01

    A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators are characteri......A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators...

  13. The effect of using waste newspaper in surface layers on physical and mechanical properties of three-layer particleboard

    Directory of Open Access Journals (Sweden)

    vahid vaziri

    2017-02-01

    Full Text Available In this study, physical and mechanical properties of particleboard made from recycled newspaper in the surface layers were investigated. Coarse and fine wood chips and recycled newspaper with dimension of 0.5 × 4 cm2 were used. The variable in this research were the ratio of recycled newspaper to wood chips (at five levels; 0:100, 15:85, 30:70, 45:55, 60:40. Urea formaldehyde resin used at 10% content on dry weight basis of the wood particles and newspaper and ammonium chloride was used as a catalyst to 2% of the dry weight of adhesive. Physical and mechanical properties of panels measured according to EN Standard. The results showed that panels containing recycled newspapers at the level of 45% had the highest bending strength and modulus of elasticity. Internal bonding and screw holding strength decreased with increasing of recycled newspaper and control sample had the highest strength. Water absorption and thickness swelling increased with increasing of recycled newspaper portion. On the basis of results of this study can be concluded that particleboard containing recycled newspapers in the surface layers up to the level of 30% can be used for general purpose boards and interior fitments (including furniture for use in dry conditions.

  14. Photovoltaic device

    Science.gov (United States)

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-09-01

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device (10) with a multilayered photovoltaic cell assembly (100) and a body portion (200) joined at an interface region (410) and including an intermediate layer (500), at least one interconnecting structural member (1500), relieving feature (2500), unique component geometry, or any combination thereof.

  15. The effects of electron and hole transport layer with the electrode work function on perovskite solar cells

    Science.gov (United States)

    Deng, Quanrong; Li, Yiqi; Chen, Lian; Wang, Shenggao; Wang, Geming; Sheng, Yonglong; Shao, Guosheng

    2016-09-01

    The effects of electron and hole transport layer with the electrode work function on perovskite solar cells with the interface defects were simulated by using analysis of microelectronic and photonic structures-one-dimensional (AMPS-1D) software. The simulation results suggest that TiO2 electron transport layer provides best device performance with conversion efficiency of 25.9% compared with ZnO and CdS. The threshold value of back electrode work function for Spiro-OMeTAD, NiO, CuI and Cu2O hole transport layer are calculated to be 4.9, 4.8, 4.7 and 4.9 eV, respectively, to reach the highest conversion efficiency. The mechanisms of device physics with various electron and hole transport materials are discussed in details. The device performance deteriorates gradually as the increased density of interface defects located at ETM/absorber or absorber/HTM. This research results can provide helpful guidance for materials and metal electrode choice for perovskite solar cells.

  16. Mathematical analogies in physics. Thin-layer wave theory

    Directory of Open Access Journals (Sweden)

    José M. Carcione

    2014-03-01

    Full Text Available Field theory applies to elastodynamics, electromagnetism, quantum mechanics, gravitation and other similar fields of physics, where the basic equations describing the phenomenon are based on constitutive relations and balance equations. For instance, in elastodynamics, these are the stress-strain relations and the equations of momentum conservation (Euler-Newton law. In these cases, the same mathematical theory can be used, by establishing appropriate mathematical equivalences (or analogies between material properties and field variables. For instance, the wave equation and the related mathematical developments can be used to describe anelastic and electromagnetic wave propagation, and are extensively used in quantum mechanics. In this work, we obtain the mathematical analogy for the reflection/refraction (transmission problem of a thin layer embedded between dissimilar media, considering the presence of anisotropy and attenuation/viscosity in the viscoelastic case, conductivity in the electromagnetic case and a potential barrier in quantum physics (the tunnel effect. The analogy is mainly illustrated with geophysical examples of propagation of S (shear, P (compressional, TM (transverse-magnetic and TE (transverse-electric waves. The tunnel effect is obtained as a special case of viscoelastic waves at normal incidence.

  17. Biofeedback in Partial Weight Bearing: Usability of Two Different Devices from a Patient’s and Physical Therapist’s Perspective

    Science.gov (United States)

    van Lieshout, Remko; Pisters, Martijn F.; Vanwanseele, Benedicte; de Bie, Rob A.; Wouters, Eveline J.; Stukstette, Mirelle J.

    2016-01-01

    Background Partial weight bearing is frequently instructed by physical therapists in patients after lower-limb trauma or surgery. The use of biofeedback devices seems promising to improve the patient’s compliance with weight-bearing instructions. SmartStep and OpenGo-Science are biofeedback devices that provide real-time feedback. For a successful implementation, usability of the devices is a critical aspect and should be tested from a user’s perspective. Aim To describe the usability from the physical therapists’ and a patients’ perspective of Smartstep and OpenGo-Science to provide feedback on partial weight bearing during supervised rehabilitation of patients after lower-limb trauma or surgery. Methods In a convergent mixed-methods design, qualitative and quantitative data were collected. Usability was subdivided into user performance, satisfaction and acceptability. Patients prescribed with partial weight bearing and their physical therapists were asked to use SmartStep and OpenGo-Science during supervised rehabilitation. Usability was qualitatively tested by a think-aloud method and a semi-structured interview and quantitatively tested by the System-Usability-Scale (SUS) and closed questions. For the qualitative data thematic content analyses were used. Results Nine pairs of physical therapists and their patients participated. The mean SUS scores for patients and physical therapists were for SmartStep 70 and 53, and for OpenGo-Science 79 and 81, respectively. Scores were interpreted with the Curved Grading Scale. The qualitative data showed that there were mixed views and perceptions from patients and physical therapists on satisfaction and acceptability. Conclusion This study gives insight in the usability of two biofeedback devices from the patient’s and physical therapist’s perspective. The overall usability from both perspectives seemed to be acceptable for OpenGo-Science. For SmartStep, overall usability seemed only acceptable from the

  18. Electrostatic MEMS devices with high reliability

    Science.gov (United States)

    Goldsmith, Charles L; Auciello, Orlando H; Sumant, Anirudha V; Mancini, Derrick C; Gudeman, Chris; Sampath, Suresh; Carlilse, John A; Carpick, Robert W; Hwang, James

    2015-02-24

    The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.

  19. 24 Hours of Sleep, Sedentary Behavior, and Physical Activity with Nine Wearable Devices

    Science.gov (United States)

    Rosenberger, Mary E.; Buman, Matthew P.; Haskell, William L.; McConnell, Michael V.; Carstensen, Laura L.

    2015-01-01

    Getting enough sleep, exercising and limiting sedentary activities can greatly contribute to disease prevention and overall health and longevity. Measuring the full 24-hour activity cycle - sleep, sedentary behavior (SED), light intensity physical activity (LPA) and moderate-to-vigorous physical activity (MVPA) - may now be feasible using small wearable devices. PURPOSE This study compares nine devices for accuracy in 24-hour activity measurement. METHODS Adults (N=40, 47% male) wore nine devices for 24-hours: Actigraph GT3X+, activPAL, Fitbit One, GENEactiv, Jawbone Up, LUMOback, Nike Fuelband, Omron pedometer, and Z-Machine. Comparisons (to standards) were made for total sleep time (Z-machine), time spent in SED (activPAL), LPA (GT3x+), MVPA (GT3x+), and steps (Omron). Analysis included mean absolute percent error, equivalence testing, and Bland-Altman plots. RESULTS Error rates ranged from 8.1–16.9% for sleep; 9.5–65.8% for SED; 19.7–28.0% for LPA; 51.8–92% for MVPA; and 14.1–29.9% for steps. Equivalence testing indicated only two comparisons were significantly equivalent to standards: the LUMOback for sedentary behavior and the GT3X+ for sleep. Bland-Altman plots indicated GT3X+ had the closest measurement for sleep, LUMOback for sedentary behavior, GENEactiv for LPA, Fitbit for MVPA and GT3X+ for steps. CONCLUSIONS Currently, no device accurately captures activity data across the entire 24-hour day, but the future of activity measurement should aim for accurate 24-hour measurement as a goal. Researchers should continue to select measurement devices based on their primary outcomes of interest. PMID:26484953

  20. Forced Ion Migration for Chalcogenide Phase Change Memory Device

    Science.gov (United States)

    Campbell, Kristy A (Inventor)

    2013-01-01

    Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

  1. Solid state photosensitive devices which employ isolated photosynthetic complexes

    Science.gov (United States)

    Peumans, Peter; Forrest, Stephen R.

    2009-09-22

    Solid state photosensitive devices including photovoltaic devices are provided which comprise a first electrode and a second electrode in superposed relation; and at least one isolated Light Harvesting Complex (LHC) between the electrodes. Preferred photosensitive devices comprise an electron transport layer formed of a first photoconductive organic semiconductor material, adjacent to the LHC, disposed between the first electrode and the LHC; and a hole transport layer formed of a second photoconductive organic semiconductor material, adjacent to the LHC, disposed between the second electrode and the LHC. Solid state photosensitive devices of the present invention may comprise at least one additional layer of photoconductive organic semiconductor material disposed between the first electrode and the electron transport layer; and at least one additional layer of photoconductive organic semiconductor material, disposed between the second electrode and the hole transport layer. Methods of generating photocurrent are provided which comprise exposing a photovoltaic device of the present invention to light. Electronic devices are provided which comprise a solid state photosensitive device of the present invention.

  2. Synthesis of PVA/PVP hydrogels having two-layer by radiation and their physical properties

    International Nuclear Information System (INIS)

    Park, K.R.; Nho, Y.C.

    2003-01-01

    In these studies, two-layer hydrogels which consisted of polyurethane membrane and a mixture of polyvinyl alcohol(PVA)/poly-N-vinylpyrrolidone(PVP)/glycerin/chitosan were made for the wound dressing. Polyurethane was dissolved in solvent, the polyurethane solution was poured on the mould, and then dried to make the thin membrane. Hydrophilic polymer solutions were poured on the polyurethane membranes, they were exposed to gamma irradiation or two steps of 'freezing and thawing' and gamma irradiation doses to make the hydrogels. The physical properties such as gelation, water absorptivity, and gel strength were examined to evaluate the hydrogels for wound dressing. The physical properties of hydrogels such as gelation and gel strength was greatly improved when polyurethane membrane was used as a covering layer of hydrogel, and the evaporation speed of water in hydrogel was reduced

  3. Comparison of WRF local and nonlocal boundary layer Physics in Greater Kuala Lumpur, Malaysia

    Science.gov (United States)

    Ooi, M. C. G.; Chan, A.; Kumarenthiran, S.; Morris, K. I.; Oozeer, M. Y.; Islam, M. A.; Salleh, S. A.

    2018-02-01

    The urban boundary layer (UBL) is the internal advection layer of atmosphere above urban region which determines the exchanges of momentum, water and other atmospheric constituents between the urban land surface and the free troposphere. This paper tested the performance of three planetary boundary layer (PBL) physics schemes of Weather Research and Forecast (WRF) software to ensure the appropriate representation of vertical structure of UBL in Greater Kuala Lumpur (GKL). Comparison was conducted on the performance of respective PBL schemes to generate vertical and near-surface weather profile and rainfall. Mellor-Yamada- Janjíc (MYJ) local PBL scheme coupled with Eta MM5 surface layer scheme was found to predict the near-surface temperature and wind profile and mixing height better than the nonlocal schemes during the intermonsoonal period with least influences of the synoptic background weather.

  4. Ferroelectric-gate field effect transistor memories device physics and applications

    CERN Document Server

    Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

    2016-01-01

    This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

  5. Effect of a thin layer of tris (8-hydroxyquinoline) aluminum doped with 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) on the chromaticity of white organic light-emitting devices

    International Nuclear Information System (INIS)

    Cheng Gang; Zhao Yi; Li Feng; Xie Wenfa; Liu Shiyong

    2004-01-01

    Efficient white organic light-emitting devices (OLEDs) are demonstrated by inserting a thin layer of tris (8-hydroxyquinoline) aluminum (Alq) doped with 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) (DCJTB) into N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,1'-biphenyl)-4,4'-diamine (NPB) layer. Alq without doping is used as an electron-transporting layer and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (bathocuproine or BCP) as an exciton-blocking layer. NPB layers are separated by the doped Alq layer, the layer that sandwiched between BCP and doped Alq layers acts as a blue-emitting layer, and the other as a hole-transporting layer. The doped Alq layer acts as a red and green-emitting as well as chromaticity-tuning layer, whose thickness and position as well as the concentration of DCJTB in Alq permit the tuning of the device spectrum to achieve a balanced white emission with Commission Internationale De L'Eclairage (CIE) coordinates of (0.33, 0.33). The device has a maximum luminance of 6745 cd/m 2 , a maximum external efficiency of 1.36 %, corresponding to 2.56 cd/A

  6. Deformable paper origami optoelectronic devices

    KAUST Repository

    He, Jr-Hau

    2017-01-19

    Deformable optoelectronic devices are provided, including photodetectors, photodiodes, and photovoltaic cells. The devices can be made on a variety of paper substrates, and can include a plurality of fold segments in the paper substrate creating a deformable pattern. Thin electrode layers and semiconductor nanowire layers can be attached to the substrate, creating the optoelectronic device. The devices can be highly deformable, e.g. capable of undergoing strains of 500% or more, bending angles of 25° or more, and/or twist angles of 270° or more. Methods of making the deformable optoelectronic devices and methods of using, e.g. as a photodetector, are also provided.

  7. Self-organization of grafted polyelectrolyte layers via the coupling of chemical equilibrium and physical interactions.

    Science.gov (United States)

    Tagliazucchi, Mario; de la Cruz, Mónica Olvera; Szleifer, Igal

    2010-03-23

    The competition between chemical equilibrium, for example protonation, and physical interactions determines the molecular organization and functionality of biological and synthetic systems. Charge regulation by displacement of acid-base equilibrium induced by changes in the local environment provides a feedback mechanism that controls the balance between electrostatic, van der Waals, steric interactions and molecular organization. Which strategies do responsive systems follow to globally optimize chemical equilibrium and physical interactions? We address this question by theoretically studying model layers of end-grafted polyacids. These layers spontaneously form self-assembled aggregates, presenting domains of controlled local pH and whose morphologies can be manipulated by the composition of the solution in contact with the film. Charge regulation stabilizes micellar domains over a wide range of pH by reducing the local charge in the aggregate at the cost of chemical free energy and gaining in hydrophobic interactions. This balance determines the boundaries between different aggregate morphologies. We show that a qualitatively new form of organization arises from the coupling between physical interactions and protonation equilibrium. This optimization strategy presents itself with polyelectrolytes coexisting in two different and well-defined protonation states. Our results underline the need of considering the coupling between chemical equilibrium and physical interactions due to their highly nonadditive behavior. The predictions provide guidelines for the creation of responsive polymer layers presenting self-organized patterns with functional properties and they give insights for the understanding of competing interactions in highly inhomogeneous and constrained environments such as those relevant in nanotechnology and those responsible for biological cells function.

  8. Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device

    Science.gov (United States)

    Miranda, Felix A. (Inventor); Theofylaktos, Onoufrios (Inventor); Pinto, Nicholas J. (Inventor); Mueller, Carl H. (Inventor); Santos, Javier (Inventor); Meador, Michael A. (Inventor)

    2015-01-01

    A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

  9. Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

    International Nuclear Information System (INIS)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex; Regan, William Raymond

    2015-01-01

    We demonstrate cuprous oxide (Cu 2 O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu 2 O layer. The devices are the most efficient of any Cu 2 O based MIS-Schottky solar cells reported to date

  10. Implantation damage in silicon devices

    International Nuclear Information System (INIS)

    Nicholas, K.H.

    1977-01-01

    Ion implantation, is an attractive technique for producing doped layers in silicon devices but the implantation process involves disruption of the lattice and defects are formed, which can degrade device properties. Methods of minimizing such damage are discussed and direct comparisons made between implantation and diffusion techniques in terms of defects in the final devices and the electrical performance of the devices. Defects are produced in the silicon lattice during implantation but they are annealed to form secondary defects even at room temperature. The annealing can be at a low temperature ( 0 C) when migration of defects in silicon in generally small, or at high temperature when they can grow well beyond the implanted region. The defect structures can be complicated by impurity atoms knocked into the silicon from surface layers by the implantation. Defects can also be produced within layers on top of the silicon and these can be very important in device fabrication. In addition to affecting the electrical properties of the final device, defects produced during fabrication may influence the chemical properties of the materials. The use of these properties to improve devices are discussed as well as the degradation they can cause. (author)

  11. Physical Layer Built-In Security Analysis and Enhancement Algorithms for CDMA Systems

    Directory of Open Access Journals (Sweden)

    Li Tongtong

    2007-01-01

    Full Text Available Historically developed for secure communication and military use, CDMA has been identified as a major modulation and multiple-access technique for 3G systems and beyond. In addition to the wide bandwidth and low power-spectrum density which make CDMA signals robust to narrowband jamming and easy to be concealed within the noise floor, the physical layer built-in information privacy of CDMA system is provided by pseudorandom scrambling. In this paper, first, security weakness of the operational and proposed CDMA airlink interfaces is analyzed. Second, based on the advanced encryption standard (AES, we propose to enhance the physical layer built-in security of CDMA systems through secure scrambling. Performance analysis demonstrates that while providing significantly improved information privacy, CDMA systems with secure scrambling have comparable computational complexity and overall system performance with that of conventionally scrambled systems. Moreover, it is shown that by scrambling the training sequence and the message sequence separately with two independent scrambling sequences, both information privacy and system performance can be further improved. The proposed scheme can readily be applied to 3G systems and beyond.

  12. Ambient Layer-by-Layer ZnO Assembly for Highly Efficient Polymer Bulk Heterojunction Solar Cells

    KAUST Repository

    Eita, Mohamed Samir

    2015-02-04

    The use of metal oxide interlayers in polymer solar cells has great potential because metal oxides are abundant, thermally stable, and can be used in fl exible devices. Here, a layer-by-layer (LbL) protocol is reported as a facile, room-temperature, solution-processed method to prepare electron transport layers from commercial ZnO nanoparticles and polyacrylic acid (PAA) with a controlled and tunable porous structure, which provides large interfacial contacts with the active layer. Applying the LbL approach to bulk heterojunction polymer solar cells with an optimized ZnO layer thickness of H25 nm yields solar cell power-conversion effi ciencies (PCEs) of ≈6%, exceeding the effi ciency of amorphous ZnO interlayers formed by conventional sputtering methods. Interestingly, annealing the ZnO/PAA interlayers in nitrogen and air environments in the range of 60-300 ° C reduces the device PCEs by almost 20% to 50%, indicating the importance of conformational changes inherent to the PAA polymer in the LbL-deposited fi lms to solar cell performance. This protocol suggests a new fabrication method for solution-processed polymer solar cell devices that does not require postprocessing thermal annealing treatments and that is applicable to fl exible devices printed on plastic substrates.

  13. Research and implementation of intelligent gateway driver layer based on Linux bus

    Directory of Open Access Journals (Sweden)

    ZHANG Jian

    2016-10-01

    Full Text Available Currently,in the field of smart home,there is no relevant organization that yet has proposed an unified protocol standard.It increases the complexity and limitations of heterogeneous gateway software framework design that different vendor′s devices have different communication mode and protocol standards.In this paper,a serial of interfaces are provided by Linux kernel,and a virtual bus is registered under Linux.The physical device drivers are able to connect to the virtual bus.The detailed designs of the communication protocol are placed in the underlying adapters,making the integration of heterogeneous networks more natural.At the same time,designing the intelligent gateway system driver layer based on Linux bus can let the application layer be more unified and clear logical.And it also let the hardware access network become more convenient and distinct.

  14. Carbon nanotubes/ceria composite layers deposited on surface acoustic wave devices for gas detection at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    David, M., E-mail: marjorie.david@univ-tln.fr [Universite du Sud Toulon, Var, IM2NP, UMR CNRS 6242, BP 20132. F 83 957 LA GARDE (France); Arab, M.; Martino, C. [Universite du Sud Toulon, Var, IM2NP, UMR CNRS 6242, BP 20132. F 83 957 LA GARDE (France); Delmas, L. [SENSeOR, Sophia Antipolis, 06250 Mougins (France); Guinneton, F.; Gavarri, J.-R. [Universite du Sud Toulon, Var, IM2NP, UMR CNRS 6242, BP 20132. F 83 957 LA GARDE (France)

    2012-05-01

    Surface acoustic wave (SAW) sensor on ATquartz piezoelectric substrate has been designed and fabricated. Test devices were based on asynchronous single-port resonators operating near the 434-MHz-centered industrial, scientific, and medical band. Multi-Walled Carbon Nanotubes/Ceria (MWNTs/CeO{sub 2}) nanocomposites were used as sensitive layers. The MWNTs were synthesized by catalytic chemical vapor deposition method and coated with nanosized ceria oxide. The composites were deposited on SAW quartz resonator using air-brush technique. MWNTs/CeO{sub 2} nanocomposites were characterized using X-ray diffraction, transmission electron and atomic force microscopy. The sensor responses were tested under acetone (C{sub 3}H{sub 5}OH) and ethanol (C{sub 2}H{sub 5}OH) gases. The output signal was done by S{sub 11} parameter of the SAW device and was monitored using a network analyzer. Frequency changes were observed under acetone and ethanol vapors. These changes depended on the surface conductivity of the nanocomposites deposited on the sensor. The single-port SAW gas sensor coated with the MWNTs/CeO{sub 2} presented the highest sensitivity in the case of acetone vapor interacting with these layers, with a frequency shift of 200 kHz at room temperature.

  15. Enhancement of open-circuit voltage on organic photovoltaic devices by Al-doped TiO2 modifying layer produced by sol–gel method

    International Nuclear Information System (INIS)

    Valaski, R.; Arantes, C.; Senna, C.A.; Carôzo, Victor; Achete, C.A.; Cremona, M.

    2014-01-01

    Sol–gel method has shown several advantages for oxide synthesis, such as lower cost production, coating large areas, lower processing temperatures and ease insertion of doping materials. Therefore, it is attractive for production of intermediate and electrode modifying layers in organic optoelectronic devices. Herein, spin-coated aluminum-doped titanium dioxide (AlTiO 2 ) thin films were produced by sol–gel method onto glass and fluorine-doped tin oxide (FTO) substrates, using different Al-dopant concentrations and post-done annealing temperatures. Electrical measurements were performed in order to investigate the improvement of the TiO 2 resistivity. Additionally, structural, compositional, morphological, optical and electrical properties of the optimal AlTiO 2 modifying layers onto FTO substrates were probed by different techniques, and compared with those obtained from the undoped thin films produced under similar conditions. Organic photovoltaic devices (OPVs) with the structure FTO/AlTiO 2 (30 nm)/C 60 (50 nm)/CuPc(50 nm)/Al with an Al concentration of 0.03 M in AlTiO 2 layer were produced. The insertion of AlTiO 2 thin films improved the short-circuit current density (J sc ) as well as the open circuit voltage (V oc ) in comparison with non-modified electrode FTO based devices. This behavior is discussed in terms of induced interface phenomena as dipole formation induced by Al. - Highlights: • Easy and cheap solution-process for AlTiO 2 modification of FTO electrode for OPVs • Electrical, structural and optical characterization of TiO 2 layers with Al-dopant • Improvement of Voc and Jsc of inverted OPVs with AlTiO 2 modified electrode

  16. Physical removal of metallic carbon nanotubes from nanotube network devices using a thermal and fluidic process

    International Nuclear Information System (INIS)

    Ford, Alexandra C; Shaughnessy, Michael; Wong, Bryan M; Kane, Alexander A; Krafcik, Karen L; Léonard, François; Kuznetsov, Oleksandr V; Billups, W Edward; Hauge, Robert H

    2013-01-01

    Electronic and optoelectronic devices based on thin films of carbon nanotubes are currently limited by the presence of metallic nanotubes. Here we present a novel approach based on nanotube alkyl functionalization to physically remove the metallic nanotubes from such network devices. The process relies on preferential thermal desorption of the alkyls from the semiconducting nanotubes and the subsequent dissolution and selective removal of the metallic nanotubes in chloroform. The approach is versatile and is applied to devices post-fabrication. (paper)

  17. Physical conditions in the reconnection layer in pulsar magnetospheres

    Energy Technology Data Exchange (ETDEWEB)

    Uzdensky, Dmitri A. [Center for Integrated Plasma Studies, Physics Department, University of Colorado, UCB 390, Boulder, CO 80309-0390 (United States); Spitkovsky, Anatoly, E-mail: uzdensky@colorado.edu, E-mail: anatoly@astro.princeton.edu [Department of Astrophysical Sciences, Princeton University, Princeton, NJ 08544 (United States)

    2014-01-01

    The magnetosphere of a rotating pulsar naturally develops a current sheet (CS) beyond the light cylinder (LC). Magnetic reconnection in this CS inevitably dissipates a nontrivial fraction of the pulsar spin-down power within a few LC radii. We develop a basic physical picture of reconnection in this environment and discuss its implications for the observed pulsed gamma-ray emission. We argue that reconnection proceeds in the plasmoid-dominated regime, via a hierarchical chain of multiple secondary islands/flux ropes. The inter-plasmoid reconnection layers are subject to strong synchrotron cooling, leading to significant plasma compression. Using the conditions of pressure balance across these current layers, the balance between the heating by magnetic energy dissipation and synchrotron cooling, and Ampere's law, we obtain simple estimates for key parameters of the layers—temperature, density, and layer thickness. In the comoving frame of the relativistic pulsar wind just outside of the equatorial CS, these basic parameters are uniquely determined by the strength of the reconnecting upstream magnetic field. For the case of the Crab pulsar, we find them to be of order 10 GeV, 10{sup 13} cm{sup –3}, and 10 cm, respectively. After accounting for the bulk Doppler boosting due to the pulsar wind, the synchrotron and inverse-Compton emission from the reconnecting CS can explain the observed pulsed high-energy (GeV) and very high energy (∼100 GeV) radiation, respectively. Also, we suggest that the rapid relative motions of the secondary plasmoids in the hierarchical chain may contribute to the production of the pulsar radio emission.

  18. Improving the physical layer security of wireless communication networks using spread spectrum coding and artificial noise approach

    CSIR Research Space (South Africa)

    Adedeji, K

    2016-09-01

    Full Text Available at the application layer to protect the messages against eavesdropping. However, the evolution of strong deciphering mechanisms has made conventional cryptography-based security techniques ineffective against attacks from an intruder. Figure 1: Layer protocol... communication networks with passive and active eavesdropper,” IEEE Globecom; Wireless Communication System, pp. 4868-4873, 2012. [9] Y. Zou, X. Wang and W. Shen, “Optimal relay selection for physical layer security in cooperative wireless networks,” IEEE...

  19. Electromagnetic ELM and inter-ELM filaments detected in the COMPASS Scrape-Off Layer.

    Czech Academy of Sciences Publication Activity Database

    Spolaore, M.; Kovařík, Karel; Stöckel, Jan; Adámek, Jiří; Dejarnac, Renaud; Ďuran, Ivan; Komm, Michael; Markovič, Tomáš; Martines, E.; Pánek, Radomír; Seidl, Jakub; Vianello, N.

    2017-01-01

    Roč. 12, August (2017), s. 844-851 ISSN 2352-1791. [PSI 2016 - 22nd International Conference on Plasma Surface Interactions in Controlled Fusion Devices/22./. Roma, 30.05.2016-03.06.2016] R&D Projects: GA MŠk(CZ) 8D15001; GA MŠk(CZ) LM2015045 EU Projects: European Commission(XE) 633053 - EUROfusion Institutional support: RVO:61389021 Keywords : Electromagnetic filaments * ELMs * Scrape-Off Layer * Magnetic fluctuations * Current density Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) http://www.sciencedirect.com/science/article/pii/S2352179116301934

  20. Smart Multiple Access Topologi Employing Intelligent Physical Layer for addressing the Mobile Node

    DEFF Research Database (Denmark)

    Sanyal, Rajarshi

    2014-01-01

    of the mobile users, the cell size of the mobile network will shrink. Eventually, there will be an upsurge of signaling messages interchanged between the device and the network due to an increase in handover related operations. Attempt should be made to reduce the interaction with the network and simplify...... the mobility and location management related processes. In this thesis we set out a technical architecture of a mobile network to abridge the intricate mobility and location management processes as well as the addressing principle to render more operational efficiency and cater to the needs of the data hungry......, for example, addressing of a node. If we have a method to actuate user identification for the purpose of mobility management by implementing lower layer processes, we can simplify or eliminate the layer 7 processes and hence reduce the intricacy and costs of mobile network elements and user equipment...

  1. Mobility balance in the light-emitting layer governs the polaron accumulation and operational stability of organic light-emitting diodes

    Science.gov (United States)

    Kim, Jae-Min; Lee, Chang-Heon; Kim, Jang-Joo

    2017-11-01

    Organic light-emitting diode (OLED) displays are lighter and more flexible, have a wider color gamut, and consume less power than conventional displays. Stable materials and the structural design of the device are important for OLED longevity. Control of charge transport and accumulation in the device is particularly important because the interaction of excitons and polarons results in material degradation. This research investigated the charge dynamics of OLEDs experimentally and by drift-diffusion modeling. Parallel capacitance-voltage measurements of devices provided knowledge of charge behavior at different driving voltages. A comparison of exciplex-forming co-host and single host structures established that the mobility balance in the emitting layers determined the amount of accumulated polarons in those layers. Consequently, an exciplex-forming co-host provides a superior structure in terms of device lifetime and efficiency because of its well-balanced mobility. Minimizing polaron accumulation is key to achieving long OLED device lifetimes. This is a crucial aspect of device physics that must be considered in the device design structure.

  2. Effect of a thin layer of tris (8-hydroxyquinoline) aluminum doped with 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) on the chromaticity of white organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Cheng Gang; Zhao Yi; Li Feng; Xie Wenfa; Liu Shiyong

    2004-11-22

    Efficient white organic light-emitting devices (OLEDs) are demonstrated by inserting a thin layer of tris (8-hydroxyquinoline) aluminum (Alq) doped with 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) (DCJTB) into N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,1'-biphenyl)-4,4'-diamine (NPB) layer. Alq without doping is used as an electron-transporting layer and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (bathocuproine or BCP) as an exciton-blocking layer. NPB layers are separated by the doped Alq layer, the layer that sandwiched between BCP and doped Alq layers acts as a blue-emitting layer, and the other as a hole-transporting layer. The doped Alq layer acts as a red and green-emitting as well as chromaticity-tuning layer, whose thickness and position as well as the concentration of DCJTB in Alq permit the tuning of the device spectrum to achieve a balanced white emission with Commission Internationale De L'Eclairage (CIE) coordinates of (0.33, 0.33). The device has a maximum luminance of 6745 cd/m{sup 2}, a maximum external efficiency of 1.36 %, corresponding to 2.56 cd/A.

  3. 10 years of engineering and physics achievements by the Large Helical Device project

    International Nuclear Information System (INIS)

    Yamada, H.; Imagawa, S.; Takeiri, Y.; Kaneko, O.; Mutoh, T.; Mito, T.; Chikaraishi, H.; Hamaguchi, S.; Ida, K.; Igami, H.; Ikeda, K.; Kasahara, H.; Kobayashi, M.; Kubo, S.; Kumazawa, R.; Maekawa, R.; Masuzaki, S.; Miyazawa, J.; Morisaki, T.; Morita, S.

    2009-01-01

    This article reviews 10 years of engineering and physics achievements by the Large Helical Device (LHD) project with emphasis on the latest results. The LHD is the largest magnetic confinement device among diversified helical systems and employs the world's largest superconducting coils. The cryogenic system has been operated for 50,000 h in total without any serious trouble and routinely provides a confining magnetic field up to 2.96 T in steady state. The heating capability to date is 23 MW of NBI, 2.9 MW of ICRF and 2.1 MW of ECH. Negative-ion-based ion sources with the accelerating voltage of 180 keV are used for a tangential NBI with the power of 16 MW. The ICRF system has full steady-state operational capability with 1.6 MW. In these 10 years, operational experience as well as a physics database have been accumulated and the advantages of stable and steady-state features have been demonstrated by the combination of advanced engineering and the intrinsic physical advantage of helical systems in LHD. Highlighted physical achievements are high beta (5% at the magnetic field of 0.425 T), high density (1.1 x 10 21 m -3 at the central temperature of 0.4 keV), high ion temperature (T i of 5.2 keV at 1.5 x 10 19 m -3 ), and steady-state operation (3200 s with 490 kW). These physical parameters have elucidated the potential of net-current free helical plasmas for an attractive fusion reactor. It also should be pointed out that a major part of these engineering and physics achievements is complementary to the tokamak approach and even contributes directly to ITER.

  4. Physical characterization of Cu{sub 2}ZnGeSe{sub 4} thin films from annealing of Cu-Zn-Ge precursor layers

    Energy Technology Data Exchange (ETDEWEB)

    Buffière, M., E-mail: buffiere@imec.be [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium); ElAnzeery, H. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Microelectronics System Design department, Nile University, Cairo (Egypt); Oueslati, S.; Ben Messaoud, K. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Department of Physics, Faculty of Sciences of Tunis, El Manar (Tunisia); Brammertz, G.; Meuris, M. [Imec Division IMOMEC — Partner in Solliance, Diepenbeek (Belgium); Institute for Material Research (IMO) Hasselt University, Diepenbeek (Belgium); Poortmans, J. [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium)

    2015-05-01

    Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H{sub 2}Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 °C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV. - Highlights: • Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) thin films were deposited using a two-step process. • CZGeSe dense layers were obtained using a Mo/Cu/Zn/Ge precursor annealed at 460 °C. • Formation of ZnSe can be avoided by tuning the composition and order of the initial stack. • P-type CZGeSe absorber with an optical band gap of 1.5 eV was obtained.

  5. GeckoFTL: Scalable Flash Translation Techniques For Very Large Flash Devices

    DEFF Research Database (Denmark)

    Dayan, Niv; Bonnet, Philippe; Idreos, Stratos

    2016-01-01

    The volume of metadata needed by a flash translation layer (FTL) is proportional to the storage capacity of a flash device. Ideally, this metadata should reside in the device's integrated RAM to enable fast access. However, as flash devices scale to terabytes, the necessary volume of metadata...... thereby harming performance and device lifetime. In this paper, we identify a key component of the metadata called the Page Validity Bitmap (PVB) as the bottleneck. PVB is used by the garbage-collectors of state-of-the-art FTLs to keep track of which physical pages in the device are invalid. PVB...... constitutes 95% of the FTL's RAM-resident metadata, and recovering PVB after power fails takes a significant proportion of the overall recovery time. To solve this problem, we propose a page-associative FTL called GeckoFTL, whose central innovation is replacing PVB with a new data structure called Logarithmic...

  6. Clustering Approaches for Pragmatic Two-Layer IoT Architecture

    Directory of Open Access Journals (Sweden)

    J. Sathish Kumar

    2018-01-01

    Full Text Available Connecting all devices through Internet is now practical due to Internet of Things. IoT assures numerous applications in everyday life of common people, government bodies, business, and society as a whole. Collaboration among the devices in IoT to bring various applications in the real world is a challenging task. In this context, we introduce an application-based two-layer architectural framework for IoT which consists of sensing layer and IoT layer. For any real-time application, sensing devices play an important role. Both these layers are required for accomplishing IoT-based applications. The success of any IoT-based application relies on efficient communication and utilization of the devices and data acquired by the devices at both layers. The grouping of these devices helps to achieve the same, which leads to formation of cluster of devices at various levels. The clustering helps not only in collaboration but also in prolonging overall network lifetime. In this paper, we propose two clustering algorithms based on heuristic and graph, respectively. The proposed clustering approaches are evaluated on IoT platform using standard parameters and compared with different approaches reported in literature.

  7. Evaluation device of diagnostic X-ray beam

    International Nuclear Information System (INIS)

    Pela, Carlos Alberto; Paula, Eldereis de; Bruco, Jose Luiz; Ghilardi Netto, Thomaz

    1996-01-01

    A device developed to determine the physical parameters useful to the evaluation of both dental and medical X-ray equipment is presented. Nine detectors connected each one to a signal amplifier are used. The amplifiers output has being connected to an analog to digital interface plugged in a PC-AT microcomputer. The X-ray pass through filters before reaching the detectors. The data collected by microcomputer are used to calculate the kVp and other factors as total tube filtration, waveform, half-value layer, exposure rate and exposure time

  8. Plasma physics

    International Nuclear Information System (INIS)

    1979-01-01

    This report contains the papers delivered at the AEB - Natal University summer school on plasma physics held in Durban during January 1979. The following topics were discussed: Tokamak devices; MHD stability; trapped particles in tori; Tokamak results and experiments; operating regime of the AEB Tokamak; Tokamak equilibrium; high beta Tokamak equilibria; ideal Tokamak stability; resistive MHD instabilities; Tokamak diagnostics; Tokamak control and data acquisition; feedback control of Tokamaks; heating and refuelling; neutral beam injection; radio frequency heating; nonlinear drift wave induced plasma transport; toroidal plasma boundary layers; microinstabilities and injected beams and quasilinear theory of the ion acoustic instability

  9. Delivery Device and Method for Forming the Same

    Science.gov (United States)

    Ma, Peter X. (Inventor); Liu, Xiaohua (Inventor); McCauley, Laurie (Inventor)

    2014-01-01

    A delivery device includes a hollow container, and a plurality of biodegradable and/or erodible polymeric layers established in the container. A layer including a predetermined substance is established between each of the plurality of polymeric layers, whereby degradation of the polymeric layer and release of the predetermined substance occur intermittently. Methods for forming the device are also disclosed herein.

  10. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  11. Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

    Science.gov (United States)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

    1992-01-01

    Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

  12. Clock- and data-recovery IC with demultiplexer for a 2.5 Gb/s ATM physical layer controller

    DEFF Research Database (Denmark)

    Hansen, Flemming; Salama, C.A.T.

    1996-01-01

    A Clock- and Data-Recovery (CDR) IC for a Physical Layer Controller in an Asynchronous Transfer Mode (ATM) system operating at a bit rate of 2.488 Gb/s is presented. The circuit was designed and fabricated in a 0.8 μm BiCMOS process featuring 13 GHz fT bipolar transistors. Clock-recovery is accom......A Clock- and Data-Recovery (CDR) IC for a Physical Layer Controller in an Asynchronous Transfer Mode (ATM) system operating at a bit rate of 2.488 Gb/s is presented. The circuit was designed and fabricated in a 0.8 μm BiCMOS process featuring 13 GHz fT bipolar transistors. Clock...

  13. Cavity nonlinear optics with layered materials

    Directory of Open Access Journals (Sweden)

    Fryett Taylor

    2017-12-01

    Full Text Available Unprecedented material compatibility and ease of integration, in addition to the unique and diverse optoelectronic properties of layered materials, have generated significant interest in their utilization in nanophotonic devices. While initial nanophotonic experiments with layered materials primarily focused on light sources, modulators, and detectors, recent efforts have included nonlinear optical devices. In this paper, we review the current state of cavity-enhanced nonlinear optics with layered materials. Along with conventional nonlinear optics related to harmonic generation, we report on emerging directions of nonlinear optics, where layered materials can potentially play a significant role.

  14. Selective layer disordering in III-nitrides with a capping layer

    Science.gov (United States)

    Wierer, Jr., Jonathan J.; Allerman, Andrew A.

    2016-06-14

    Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.

  15. Scattering from a random layer of leaves in the physical optics limit

    Science.gov (United States)

    Lang, R. H.; Seker, S. S.; Le Vine, D. M.

    1982-01-01

    Backscatter of electromagnetic radiation from a layer of vegetation over flat lossy ground has been studied in collaborative research at the George Washingnton University and the Goddard Space Flight Center. In this work the vegetation is composed of leaves which are modeled by a random collection of lossy dielectric disks. Backscattering coefficients for the vegetation layer have been calculated in the case of disks whose diameter is large compared to wavelength. These backscattering coefficients are obtained in terms of the scattering amplitude of an individual disk by employing the distorted Born procedure. The scattering amplitude for a disk which is large compared to wavelength is then found by physical optic techniques. Computed results are interpreted in terms of dominant reflected and transmitted contributions from the disks and ground.

  16. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  17. Effect of slow-solvent-vapour treatment on performance of polymer photovoltaic devices

    International Nuclear Information System (INIS)

    Zhi-Hui, Feng; Yan-Bing, Hou; Quan-Min, Shi; Xiao-Jun, Liu; Feng, Teng

    2010-01-01

    In this work, enhanced poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) bulkheterojunction photovoltaic devices are achieved via slow-solvent-vapour treatment. The correlations between the morphology of the active layer and the photovoltaic performance of polymer-based solar cell are investigated. The active layers are characterized by atomic force microscopy and optical absorption. The results show that slow-solvent-vapour treatment can induce P3HT self-organization into an ordered structure, leading to the enhanced absorption and efficient charge transport. (cross-disciplinary physics and related areas of science and technology)

  18. Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer

    International Nuclear Information System (INIS)

    Huang, H.-H.; Chu, S.-Y.; Kao, P.-C.; Chen, Y.-C.; Yang, M.-R.; Tseng, Z.-L.

    2009-01-01

    The advantages of using an anode buffer layer of ZnO on the electro-optical properties of organic light emitting devices (OLEDs) are reported. ZnO powders were thermal-evaporated and then treated with ultra-violet (UV) ozone exposure to make the ZnO layers. The turn-on voltage of OLEDs decreased from 4 V (4.2 cd/m 2 ) to 3 V (3.4 cd/m 2 ) and the power efficiency increased from 2.7 lm/W to 4.7 lm/W when a 1-nm-thick ZnO layer was inserted between indium tin oxide (ITO) anodes and α-naphthylphenylbiphenyl diamine (NPB) hole-transporting layers. X-ray and ultra-violet photoelectron spectroscopy (XPS and UPS) results revealed the formation of the ZnO layer and showed that the work function increased by 0.59 eV when the ZnO/ITO layer was treated by UV-ozone for 20 min. The surface of the ZnO/ITO film became smoother than that of bare ITO film after the UV-ozone treatment. Thus, the hole-injection energy barrier was lowered by inserting an ZnO buffer layer, resulting in a decrease of the turn-on voltage and an increase of the power efficiency of OLEDs.

  19. Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

    International Nuclear Information System (INIS)

    Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro; Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S.; Logeeswaran, V.J.; Islam, M.S.

    2009-01-01

    A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

  20. Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro [University of California, Santa Cruz (United States). Baskin School of Engineering; NASA Ames Research Center, Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz, Moffett Field, CA (United States); Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S. [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States); Logeeswaran, V.J.; Islam, M.S. [University of California Davis, Electrical and Computer Engineering, Davis, CA (United States)

    2009-06-15

    A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

  1. Improved efficiency in organic light-emitting devices with tris-(8-hydroxyquinoline) aluminium doped 9,10-di(2-naphthyl) anthracene emission layer

    Energy Technology Data Exchange (ETDEWEB)

    Yuan Yongbo; Lian Jiarong; Li Shuang; Zhou Xiang [State Key Lab of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou, 510275 (China)], E-mail: stszx@mail.sysu.edu.cn

    2008-11-21

    Organic light-emitting devices with tris-(8-hydroxyquinoline) aluminium (Alq{sub 3}) doped 9,10-di(2-naphthyl) anthracene (ADN) as the emission layer (EML) have been fabricated. These devices exhibit efficient electroluminescence (EL) originated from the Alq{sub 3} as the mass ratio of Alq{sub 3} to ADN was varied from 1 to 50%. The devices with an optimal Alq{sub 3} mass ratio of 10 wt% showed a peak EL efficiency and an external quantum efficiency of 9.1 cd A{sup -1} and 2.7% at a luminance of 1371 cd m{sup -2}, which is improved by a factor of 2.2 compared with 4.1 cd A{sup -1} and 1.2% at a luminance of 3267 cd m{sup -2} for conventional devices with the neat Alq{sub 3} as the EML.

  2. Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory device

    Science.gov (United States)

    Zhu, Lisha; Hu, Wei; Gao, Chao; Guo, Yongcai

    2017-12-01

    This paper reports the reversible transition processes between the bipolar and complementary resistive switching (CRS) characteristics on the binary metal-oxide resistive memory devices of Pt/HfO x /TiN and Pt/TaO x /TiN by applying the appropriate bias voltages. More interestingly, by controlling the amplitude of the negative bias, the parasitic resistive switching effect exhibiting repeatable switching behavior is uncovered from the CRS behavior. The electrical observation of the parasitic resistive switching effect can be explained by the controlled size of the conductive filament. This work confirms the transformation and interrelationship among the bipolar, parasitic, and CRS effects, and thus provides new insight into the understanding of the physical mechanism of the binary metal-oxide resistive switching memory devices.

  3. Laser Processed Silver Nanowire Network Transparent Electrodes for Novel Electronic Devices

    Science.gov (United States)

    Spechler, Joshua Allen

    Silver nanowire network transparent conducting layers are poised to make headway into a space previously dominated by transparent conducting oxides due to the promise of a flexible, scaleable, lab-atmosphere processable alternative. However, there are many challenges standing in the way between research scale use and consumer technology scale adaptation of this technology. In this thesis we will explore many, and overcome a few of these challenges. We will address the poor conductivity at the narrow nanowire-nanowire junction points in the network by developing a laser based process to weld nanowires together on a microscopic scale. We address the need for a comparative metric for transparent conductors in general, by taking a device level rather than a component level view of these layers. We also address the mechanical, physical, and thermal limitations to the silver nanowire networks by making composites from materials including a colorless polyimide and titania sol-gel. Additionally, we verify our findings by integrating these processes into devices. Studying a hybrid organic/inorganic heterojunction photovoltaic device we show the benefits of a laser processed electrode. Green phosphorescent organic light emitting diodes fabricated on a solution phase processed silver nanowire based electrode show favorable device metrics compared to a conductive oxide electrode based control. The work in this thesis is intended to push the adoption of silver nanowire networks to further allow new device architectures, and thereby new device applications.

  4. Extreme Ultraviolet Process Optimization for Contact Layer of 14 nm Node Logic and 16 nm Half Pitch Memory Devices

    Science.gov (United States)

    Tseng, Shih-En; Chen, Alek

    2012-06-01

    Extreme ultraviolet (EUV) lithography is considered the most promising single exposure technology at the 27 nm half-pitch node and beyond. The imaging performance of ASML TWINSCAN NXE:3100 has been demonstrated to be able to resolve 26 nm Flash gate layer and 16 nm static random access memory (SRAM) metal layer with a 0.25 numerical aperture (NA) and conventional illumination. Targeting for high volume manufacturing, ASML TWINSCAN NXE:3300B, featuring a 0.33 NA lens with off-axis illumination, will generate a higher contrast aerial image due to improved diffraction order collection efficiency and is expected to reduce target dose via mask biasing. This work performed a simulation to determine how EUV high NA imaging benefits the mask rule check trade-offs required to achieve viable lithography solutions in two device application scenarios: a 14 nm node 6T-SRAM contact layer and a 16 nm half-pitch NAND Flash staggered contact layer. In each application, the three-dimensional mask effects versus Kirchhoff mask were also investigated.

  5. Plated lamination structures for integrated magnetic devices

    Science.gov (United States)

    Webb, Bucknell C.

    2014-06-17

    Semiconductor integrated magnetic devices such as inductors, transformers, etc., having laminated magnetic-insulator stack structures are provided, wherein the laminated magnetic-insulator stack structures are formed using electroplating techniques. For example, an integrated laminated magnetic device includes a multilayer stack structure having alternating magnetic and insulating layers formed on a substrate, wherein each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by an insulating layer, and a local shorting structure to electrically connect each magnetic layer in the multilayer stack structure to an underlying magnetic layer in the multilayer stack structure to facilitate electroplating of the magnetic layers using an underlying conductive layer (magnetic or seed layer) in the stack as an electrical cathode/anode for each electroplated magnetic layer in the stack structure.

  6. Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

    Science.gov (United States)

    Atiwongsangthong, Narin

    2012-08-01

    The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

  7. An enhanced lumped element electrical model of a double barrier memristive device

    International Nuclear Information System (INIS)

    Solan, Enver; Ochs, Karlheinz; Dirkmann, Sven; Hansen, Mirko; Kohlstedt, Hermann; Ziegler, Martin; Schroeder, Dietmar; Mussenbrock, Thomas

    2017-01-01

    The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such applications. These devices are memristive systems—nonlinear resistors with memory. They are fabricated in nanotechnology and hence parameter spread during fabrication may aggravate reproducible analyses. This issue makes simulation models of memristive devices worthwhile. Kinetic Monte-Carlo simulations based on a distributed model of the device can be used to understand the underlying physical and chemical phenomena. However, such simulations are very time-consuming and neither convenient for investigations of whole circuits nor for real-time applications, e.g. emulation purposes. Instead, a concentrated model of the device can be used for both fast simulations and real-time applications, respectively. We introduce an enhanced electrical model of a valence change mechanism (VCM) based double barrier memristive device (DBMD) with a continuous resistance range. This device consists of an ultra-thin memristive layer sandwiched between a tunnel barrier and a Schottky-contact. The introduced model leads to very fast simulations by using usual circuit simulation tools while maintaining physically meaningful parameters. Kinetic Monte-Carlo simulations based on a distributed model and experimental data have been utilized as references to verify the concentrated model. (paper)

  8. Materials science and technology strained-layer superlattices materials science and technology

    CERN Document Server

    Pearsall, Thomas P; Willardson, R K; Pearsall, Thomas P

    1990-01-01

    The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting ...

  9. Complex confining layers : a physical and geochemical characterization of heterogeneous unconsolidated fluvial deposits using a facies-based approach

    NARCIS (Netherlands)

    Helvoort, Pieter-Jan van

    2003-01-01

    A proper characterization of physical and chemical heterogeneities in the subsoil is an important condition for successful modeling of groundwater flow and solute transport. This study focuses on the physical and chemical characterization of a complex confining layer in the Rhine–Meuse deltaic plain

  10. Metal insulator semiconductor solar cell devices based on a Cu{sub 2}O substrate utilizing h-BN as an insulating and passivating layer

    Energy Technology Data Exchange (ETDEWEB)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex, E-mail: azettl@berkeley.edu [Department of Physics, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kavli Energy Nanosciences Institute at the University of California, Berkeley, and the Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Regan, William Raymond [Department of Physics, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2015-03-09

    We demonstrate cuprous oxide (Cu{sub 2}O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu{sub 2}O layer. The devices are the most efficient of any Cu{sub 2}O based MIS-Schottky solar cells reported to date.

  11. Achieving Ohmic Contact for High-quality MoS2 Devices on Hexagonal Boron Nitride

    Science.gov (United States)

    Cui, Xu

    MoS2, among many other transition metal dichalcogenides (TMDCs), holds great promise for future applications in nano-electronics, opto-electronics and mechanical devices due to its ultra-thin nature, flexibility, sizable band-gap, and unique spin-valley coupled physics. However, there are two main challenges that hinder careful study of this material. Firstly, it is hard to achieve Ohmic contacts to mono-layer MoS2, particularly at low temperatures (T) and low carrier densities. Secondly, materials' low quality and impurities introduced during the fabrication significantly limit the electron mobility of mono- and few-layer MoS2 to be substantially below theoretically predicted limits, which has hampered efforts to observe its novel quantum transport behaviours. Traditional low work function metals doesn't necessary provide good electron injection to thin MoS2 due to metal oxidation, Fermi level pinning, etc. To address the first challenge, we tried multiple contact schemes and found that mono-layer hexagonal boron nitride (h-BN) and cobalt (Co) provide robust Ohmic contact. The mono-layer spacer serves two advantageous purposes: it strongly interacts with the transition metal, reducing its work function by over 1 eV; and breaks the metal-TMDCs interaction to eliminate the interfacial states that cause Fermi level pinning. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kohm.um at a carrier density of 5.3x10. 12/cm. 2. Similar to graphene, eliminating all potential sources of disorder and scattering is the key to achieving high performance in MoS2 devices. We developed a van der Waals heterostructure device platform where MoS2 layers are fully encapsulated within h-BN and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. The h-BN-encapsulation provides excellent protection from environmental factors, resulting in

  12. Highly air stable passivation of graphene based field effect devices.

    Science.gov (United States)

    Sagade, Abhay A; Neumaier, Daniel; Schall, Daniel; Otto, Martin; Pesquera, Amaia; Centeno, Alba; Elorza, Amaia Zurutuza; Kurz, Heinrich

    2015-02-28

    The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in ambient atmosphere. This is achieved by selecting proper seed layer prior to deposition of encapsulation layer. The passivated devices are also demonstrated to be robust towards the exposure to chemicals and heat treatments, typically used during device fabrication. Additionally, the passivation of high stability and reproducible characteristics is also shown for functional devices like integrated graphene based inverters.

  13. Compact Layers of Hybrid Halide Perovskites Fabricated via the Aerosol Deposition Process-Uncoupling Material Synthesis and Layer Formation.

    Science.gov (United States)

    Panzer, Fabian; Hanft, Dominik; Gujar, Tanaji P; Kahle, Frank-Julian; Thelakkat, Mukundan; Köhler, Anna; Moos, Ralf

    2016-04-08

    We present the successful fabrication of CH₃NH₃PbI₃ perovskite layers by the aerosol deposition method (ADM). The layers show high structural purity and compactness, thus making them suitable for application in perovskite-based optoelectronic devices. By using the aerosol deposition method we are able to decouple material synthesis from layer processing. Our results therefore allow for enhanced and easy control over the fabrication of perovskite-based devices, further paving the way for their commercialization.

  14. A review of molecular modelling of electric double layer capacitors.

    Science.gov (United States)

    Burt, Ryan; Birkett, Greg; Zhao, X S

    2014-04-14

    Electric double-layer capacitors are a family of electrochemical energy storage devices that offer a number of advantages, such as high power density and long cyclability. In recent years, research and development of electric double-layer capacitor technology has been growing rapidly, in response to the increasing demand for energy storage devices from emerging industries, such as hybrid and electric vehicles, renewable energy, and smart grid management. The past few years have witnessed a number of significant research breakthroughs in terms of novel electrodes, new electrolytes, and fabrication of devices, thanks to the discovery of innovative materials (e.g. graphene, carbide-derived carbon, and templated carbon) and the availability of advanced experimental and computational tools. However, some experimental observations could not be clearly understood and interpreted due to limitations of traditional theories, some of which were developed more than one hundred years ago. This has led to significant research efforts in computational simulation and modelling, aimed at developing new theories, or improving the existing ones to help interpret experimental results. This review article provides a summary of research progress in molecular modelling of the physical phenomena taking place in electric double-layer capacitors. An introduction to electric double-layer capacitors and their applications, alongside a brief description of electric double layer theories, is presented first. Second, molecular modelling of ion behaviours of various electrolytes interacting with electrodes under different conditions is reviewed. Finally, key conclusions and outlooks are given. Simulations on comparing electric double-layer structure at planar and porous electrode surfaces under equilibrium conditions have revealed significant structural differences between the two electrode types, and porous electrodes have been shown to store charge more efficiently. Accurate electrolyte and

  15. Polyaniline–titania solid electrolyte for new generation photovoltaic single-layer devices

    International Nuclear Information System (INIS)

    Ibrahim, Michael; Bassil, Maria; Demirci, Umit B.; Khoury, Tony; El Haj Moussa, Georges; El Tahchi, Mario; Miele, Philippe

    2012-01-01

    Highlights: ► Strong interaction between polyaniline and TiO 2 and the formation of a core/shell structure. ► Enhancement of the absorption of TiO 2 in the visible range. ► Diode-like behavior with low polyaniline content. ► Single layer photovoltaic device based on solid polyaniline–TiO 2 composite. - Abstract: In this study, in situ chemical oxidative polymerization of very low quantities of aniline doped with HCl using ammonium persulfate inside an aqueous solution of 10 wt.% of titanium dioxide was used to prepare a novel photovoltaic paint. Photoelectrical properties of the composite have been observed and the operating principle of the photovoltaic device is presented. We report an enhancement of the absorption of TiO 2 powder in the visible range due to the sensitization by conductive polyaniline. Under illumination an open circuit voltage of 593 mV and a short circuit current density of 0.502 A m −2 were recorded. The surface conductivity of PANI–TiO 2 pellets is measured using the four-point probe technique. The percolation theory together with variable range hopping explained the behavior of the surface conductivity of the composites. Morphological analysis using Transmission Electron Microscope showed the core/shell structure of the composites and energy dispersive X-ray showed the homogeneity of the composite. Fourier transform infrared spectroscopy confirmed the chemical adsorption of polyaniline at the surface of TiO 2 . UV–visible spectroscopy showed a shift of the polaron energy inside the polyaniline energy gap. The proposed morphology is showed to be responsible for the photoactivity of the composite.

  16. Full space device optimization for solar cells.

    Science.gov (United States)

    Baloch, Ahmer A B; Aly, Shahzada P; Hossain, Mohammad I; El-Mellouhi, Fedwa; Tabet, Nouar; Alharbi, Fahhad H

    2017-09-20

    Advances in computational materials have paved a way to design efficient solar cells by identifying the optimal properties of the device layers. Conventionally, the device optimization has been governed by single or double descriptors for an individual layer; mostly the absorbing layer. However, the performance of the device depends collectively on all the properties of the material and the geometry of each layer in the cell. To address this issue of multi-property optimization and to avoid the paradigm of reoccurring materials in the solar cell field, a full space material-independent optimization approach is developed and presented in this paper. The method is employed to obtain an optimized material data set for maximum efficiency and for targeted functionality for each layer. To ensure the robustness of the method, two cases are studied; namely perovskite solar cells device optimization and cadmium-free CIGS solar cell. The implementation determines the desirable optoelectronic properties of transport mediums and contacts that can maximize the efficiency for both cases. The resulted data sets of material properties can be matched with those in materials databases or by further microscopic material design. Moreover, the presented multi-property optimization framework can be extended to design any solid-state device.

  17. Substrate structures for InP-based devices

    International Nuclear Information System (INIS)

    Wanlass, M.W.; Sheldon, P.

    1990-01-01

    A substrate structure for an InP-based semiconductor device having an InP based film is described. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at the opposite end to the InP=based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device

  18. Buffer layers for REBCO films for use in superconducting devices

    Science.gov (United States)

    Goyal, Amit; Wee, Sung-Hun

    2014-06-10

    A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

  19. Electronic energy loss spectra from mono-layer to few layers of phosphorene

    International Nuclear Information System (INIS)

    Mohan, Brij; Thakur, Rajesh; Ahluwalia, P. K.

    2016-01-01

    Using first principles calculations, electronic and optical properties of few-layers phosphorene has been investigated. Electronic band structure show a moderate band gap of 0.9 eV in monolayer phosphorene which decreases with increasing number of layers. Optical properties of few-layers of phosphorene in infrared and visible region shows tunability with number of layers. Electron energy loss function has been plotted and huge red shift in plasmonic behaviours is found. These tunable electronic and optical properties of few-layers of phosphorene can be useful for the applications of optoelectronic devices.

  20. Electronic energy loss spectra from mono-layer to few layers of phosphorene

    Energy Technology Data Exchange (ETDEWEB)

    Mohan, Brij, E-mail: brijmohanhpu@yahoo.com; Thakur, Rajesh; Ahluwalia, P. K. [Department of Physics, Himachal Pradesh University, Shimla (HP) India 171005 (India)

    2016-05-23

    Using first principles calculations, electronic and optical properties of few-layers phosphorene has been investigated. Electronic band structure show a moderate band gap of 0.9 eV in monolayer phosphorene which decreases with increasing number of layers. Optical properties of few-layers of phosphorene in infrared and visible region shows tunability with number of layers. Electron energy loss function has been plotted and huge red shift in plasmonic behaviours is found. These tunable electronic and optical properties of few-layers of phosphorene can be useful for the applications of optoelectronic devices.

  1. Spin-transfer phenomena in layered magnetic structures: Physical phenomena and materials aspects

    International Nuclear Information System (INIS)

    Gruenberg, P.; Buergler, D.E.; Dassow, H.; Rata, A.D.; Schneider, C.M.

    2007-01-01

    During the past 20 years, layered structures consisting of ferromagnetic layers and spacers of various material classes with a thickness of only a few nanometers have revealed a variety of exciting and potentially very useful phenomena not present in bulk material. Representing distinct manifestations of spin-transfer processes, these phenomena may be categorized into interlayer exchange coupling (IEC), giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and the more recently discovered spin-transfer torque effect leading to current-induced magnetization switching (CIMS) and current-driven magnetization dynamics. These phenomena clearly confer novel material properties on magnetic layered structures with respect to the (magneto-)transport and the magnetostatic as well as magnetodynamic behavior. Here, we will first concentrate on the less well understood aspects of IEC across insulating and semiconducting interlayers and relate the observations to TMR in the corresponding structures. In this context, we will also discuss more recent advances in TMR due to the use of electrodes made from Heusler alloys and the realization of coherent tunneling in epitaxial magnetic tunneling junctions. Finally, we will review our results on CIMS in epitaxial magnetic nanostructures showing that normal and inverse CIMS can occur simultaneously in a single nanopillar device. In all cases discussed, material issues play a major role in the detailed understanding of the spin-transfer effects, in particular in those systems that yield the largest effects and are thus of utmost interest for applications

  2. Hardening device, by inserts, of electronic component against radiation

    International Nuclear Information System (INIS)

    Val, C.

    1987-01-01

    The hardening device includes at least two materials, one with high atomic number with respect to the other. One of these materials is set as inserts in a layer of the other material. The hardening device is then made by stacking of such layers, the insert density varying from one layer to the other, making thus vary the atomic number resulting from the hardening device along its thickness, following a predefined law [fr

  3. Performance Assessment of New Land-Surface and Planetary Boundary Layer Physics in the WRF-ARW

    Science.gov (United States)

    The Pleim-Xiu land surface model, Pleim surface layer scheme, and Asymmetric Convective Model (version 2) are now options in version 3.0 of the Weather Research and Forecasting model (WRF) Advanced Research WRF (ARW) core. These physics parameterizations were developed for the f...

  4. Radiation hardening of MOS devices by boron

    International Nuclear Information System (INIS)

    Danchenko, V.

    1975-01-01

    A novel technique is disclosed for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device of the type having a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. In the preferred embodiment, the novel inventive technique contemplates the introduction of boron into the insulating oxide, the boron being introduced within a layer of the oxide of about 100A to 300A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 atoms/ cm 3 . The novel technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations, which accumulations, if not eliminated, would cause shifting of the gate threshold potential of a radiation subjected MOS device, and thus render the device unstable and/or inoperative. (auth)

  5. Analytical Solution and Physics of a Propellant Damping Device

    Science.gov (United States)

    Yang, H. Q.; Peugeot, John

    2011-01-01

    NASA design teams have been investigating options for "detuning" Ares I to prevent oscillations originating in the vehicle solid-rocket main stage from synching up with the natural resonance of the rest of the vehicle. An experimental work started at NASA MSFC center in 2008 using a damping device showed great promise in damping the vibration level of an 8 resonant tank. However, the mechanisms of the vibration damping were not well understood and there were many unknowns such as the physics, scalability, technology readiness level (TRL), and applicability for the Ares I vehicle. The objectives of this study are to understand the physics of intriguing slosh damping observed in the experiments, to further validate a Computational Fluid Dynamics (CFD) software in propellant sloshing against experiments with water, and to study the applicability and efficiency of the slosh damper to a full scale propellant tank and to cryogenic fluids. First a 2D fluid-structure interaction model is built to model the system resonance of liquid sloshing and structure vibration. A damper is then added into the above model to simulate experimentally observed system damping phenomena. Qualitative agreement is found. An analytical solution is then derived from the Newtonian dynamics for the thrust oscillation damper frequency, and a slave mass concept is introduced in deriving the damper and tank interaction dynamics. The paper will elucidate the fundamental physics behind the LOX damper success from the derivation of the above analytical equation of the lumped Newtonian dynamics. Discussion of simulation results using high fidelity multi-phase, multi-physics, fully coupled CFD structure interaction model will show why the LOX damper is unique and superior compared to other proposed mitigation techniques.

  6. Optimal construction parameters of electrosprayed trilayer organic photovoltaic devices

    International Nuclear Information System (INIS)

    Shah, S K; Ali, M; Gunnella, R; Abbas, M; Hirsch, L

    2014-01-01

    A detailed investigation of the optimal set of parameters employed in multilayer device fabrication obtained through successive electrospray deposited layers is reported. In this scheme, the donor/acceptor (D/A) bulk heterojunction layer is sandwiched between two thin stacked layers of individual donor and acceptor materials. The stacked layers geometry with optimal thicknesses plays a decisive role in improving operation characteristics. Among the parameters of the multilayer organic photovoltaics device, the D/A concentration ratio, blend thickness and stacking layers thicknesses are optimized. Other parameters, such as thermal annealing and the role of top metal contacts, are also discussed. Internal photon to current efficiency is found to attain a strong response in the 500 nm optical region for the most efficient device architectures. Such an observation indicates a clear interplay between photon harvesting of active layers and transport by ancillary stacking layers, opening up the possibility to engineer both the material fine structure and the device architecture to obtain the best photovoltaic response from a complex organic heterostructure. (paper)

  7. Cross-layer design in optical networks

    CERN Document Server

    Brandt-Pearce, Maïté; Demeester, Piet; Saradhi, Chava

    2013-01-01

    Optical networks have become an integral part of the communications infrastructure needed to support society’s demand for high-speed connectivity.  Cross-Layer Design in Optical Networks addresses topics in optical network design and analysis with a focus on physical-layer impairment awareness and network layer service requirements, essential for the implementation and management of robust scalable networks.  The cross-layer treatment includes bottom-up impacts of the physical and lambda layers, such as dispersion, noise, nonlinearity, crosstalk, dense wavelength packing, and wavelength line rates, as well as top-down approaches to handle physical-layer impairments and service requirements.

  8. Compact Layers of Hybrid Halide Perovskites Fabricated via the Aerosol Deposition Process—Uncoupling Material Synthesis and Layer Formation

    Directory of Open Access Journals (Sweden)

    Fabian Panzer

    2016-04-01

    Full Text Available We present the successful fabrication of CH3NH3PbI3 perovskite layers by the aerosol deposition method (ADM. The layers show high structural purity and compactness, thus making them suitable for application in perovskite-based optoelectronic devices. By using the aerosol deposition method we are able to decouple material synthesis from layer processing. Our results therefore allow for enhanced and easy control over the fabrication of perovskite-based devices, further paving the way for their commercialization.

  9. Carrier transport in flexible organic bistable devices of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) polymer layer

    International Nuclear Information System (INIS)

    Son, Dong-Ick; Park, Dong-Hee; Choi, Won Kook; Cho, Sung-Hwan; Kim, Won-Tae; Kim, Tae Whan

    2009-01-01

    The bistable effects of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) (PMMA) polymer single layer by using flexible polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that ZnO nanoparticles were formed inside the PMMA polymer layer. Current-voltage (I-V) measurement on the Al/ZnO nanoparticles embedded in an insulating PMMA polymer layer/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the ZnO nanoparticles, indicative of trapping, storing, and emission of charges in the electronic states of the ZnO nanoparticles. The carrier transport mechanism of the bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results by analyzing the effect of space charge.

  10. A Novel Secure Transmission Scheme in MIMO Two-Way Relay Channels with Physical Layer Approach

    Directory of Open Access Journals (Sweden)

    Qiao Liu

    2017-01-01

    Full Text Available Security issue has been considered as one of the most pivotal aspects for the fifth-generation mobile network (5G due to the increasing demands of security service as well as the growing occurrence of security threat. In this paper, instead of focusing on the security architecture in the upper layer, we investigate the secure transmission for a basic channel model in a heterogeneous network, that is, two-way relay channels. By exploiting the properties of the transmission medium in the physical layer, we propose a novel secure scheme for the aforementioned channel mode. With precoding design, the proposed scheme is able to achieve a high transmission efficiency as well as security. Two different approaches have been introduced: information theoretical approach and physical layer encryption approach. We show that our scheme is secure under three different adversarial models: (1 untrusted relay attack model, (2 trusted relay with eavesdropper attack model, and (3 untrusted relay with eavesdroppers attack model. We also derive the secrecy capacity of the two different approaches under the three attacks. Finally, we conduct three simulations of our proposed scheme. The simulation results agree with the theoretical analysis illustrating that our proposed scheme could achieve a better performance than the existing schemes.

  11. Design of Strain-Compensated Epitaxial Layers Using an Electrical Circuit Model

    Science.gov (United States)

    Kujofsa, Tedi; Ayers, John E.

    2017-12-01

    The design of heterostructures that exhibit desired strain characteristics is critical for the realization of semiconductor devices with improved performance and reliability. The control of strain and dislocation dynamics requires an understanding of the relaxation processes associated with mismatched epitaxy, and the starting point for this analysis is the equilibrium strain profile, because the difference between the actual strain and the equilibrium value determines the driving force for dislocation glide and relaxation. Previously, we developed an electrical circuit model approach for the equilibrium analysis of semiconductor heterostructures, in which an epitaxial layer may be represented by a stack of subcircuits, each of which involves an independent current source, a resistor, an independent voltage source, and an ideal diode. In this work, we have applied the electrical circuit model to study the strain compensation mechanism and show that, for a given compositionally uniform device layer with fixed mismatch and layer thickness, a buffer layer may be designed (in terms of thickness and mismatch) to tailor the strain in the device layer. A special case is that in which the device layer will exhibit zero residual strain in equilibrium (complete strain compensation). In addition, the application of the electrical circuit analogy enables the determination of exact expressions for the residual strain characteristics of both the buffer and device layers in the general case where the device layer may exhibit partial strain compensation. On the basis of this framework, it is possible to develop design equations for the tailoring of the strain in a device layer grown on a uniform composition buffer.

  12. Enhancement of open-circuit voltage on organic photovoltaic devices by Al-doped TiO{sub 2} modifying layer produced by sol–gel method

    Energy Technology Data Exchange (ETDEWEB)

    Valaski, R.; Arantes, C.; Senna, C.A.; Carôzo, Victor; Achete, C.A. [Materials Metrology Division, Instituto Nacional de Metrologia, Qualidade e Tecnologia, Xerém, Duque de Caxias 25250-020, RJ (Brazil); Cremona, M., E-mail: cremona@fis.puc-rio.br [Materials Metrology Division, Instituto Nacional de Metrologia, Qualidade e Tecnologia, Xerém, Duque de Caxias 25250-020, RJ (Brazil); Physics Department, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro 22453-970, RJ (Brazil)

    2014-12-01

    Sol–gel method has shown several advantages for oxide synthesis, such as lower cost production, coating large areas, lower processing temperatures and ease insertion of doping materials. Therefore, it is attractive for production of intermediate and electrode modifying layers in organic optoelectronic devices. Herein, spin-coated aluminum-doped titanium dioxide (AlTiO{sub 2}) thin films were produced by sol–gel method onto glass and fluorine-doped tin oxide (FTO) substrates, using different Al-dopant concentrations and post-done annealing temperatures. Electrical measurements were performed in order to investigate the improvement of the TiO{sub 2} resistivity. Additionally, structural, compositional, morphological, optical and electrical properties of the optimal AlTiO{sub 2} modifying layers onto FTO substrates were probed by different techniques, and compared with those obtained from the undoped thin films produced under similar conditions. Organic photovoltaic devices (OPVs) with the structure FTO/AlTiO{sub 2}(30 nm)/C{sub 60}(50 nm)/CuPc(50 nm)/Al with an Al concentration of 0.03 M in AlTiO{sub 2} layer were produced. The insertion of AlTiO{sub 2} thin films improved the short-circuit current density (J{sub sc}) as well as the open circuit voltage (V{sub oc}) in comparison with non-modified electrode FTO based devices. This behavior is discussed in terms of induced interface phenomena as dipole formation induced by Al. - Highlights: • Easy and cheap solution-process for AlTiO{sub 2} modification of FTO electrode for OPVs • Electrical, structural and optical characterization of TiO{sub 2} layers with Al-dopant • Improvement of Voc and Jsc of inverted OPVs with AlTiO{sub 2} modified electrode.

  13. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U. [Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping 58183 (Sweden); Bergsten, J.; Rorsman, N. [Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296 (Sweden)

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  14. Designing ECG-based physical unclonable function for security of wearable devices.

    Science.gov (United States)

    Shihui Yin; Chisung Bae; Sang Joon Kim; Jae-Sun Seo

    2017-07-01

    As a plethora of wearable devices are being introduced, significant concerns exist on the privacy and security of personal data stored on these devices. Expanding on recent works of using electrocardiogram (ECG) as a modality for biometric authentication, in this work, we investigate the possibility of using personal ECG signals as the individually unique source for physical unclonable function (PUF), which eventually can be used as the key for encryption and decryption engines. We present new signal processing and machine learning algorithms that learn and extract maximally different ECG features for different individuals and minimally different ECG features for the same individual over time. Experimental results with a large 741-subject in-house ECG database show that the distributions of the intra-subject (same person) Hamming distance of extracted ECG features and the inter-subject Hamming distance have minimal overlap. 256-b random numbers generated from the ECG features of 648 (out of 741) subjects pass the NIST randomness tests.

  15. Ontology-Based Device Descriptions and Device Repository for Building Automation Devices

    Directory of Open Access Journals (Sweden)

    Dibowski Henrik

    2011-01-01

    Full Text Available Device descriptions play an important role in the design and commissioning of modern building automation systems and help reducing the design time and costs. However, all established device descriptions are specialized for certain purposes and suffer from several weaknesses. This hinders a further design automation, which is strongly needed for the more and more complex building automation systems. To overcome these problems, this paper presents novel Ontology-based Device Descriptions (ODDs along with a layered ontology architecture, a specific ontology view approach with virtual properties, a generic access interface, a triple store-based database backend, and a generic search mask GUI with underlying query generation algorithm. It enables a formal, unified, and extensible specification of building automation devices, ensures their comparability, and facilitates a computer-enabled retrieval, selection, and interoperability evaluation, which is essential for an automated design. The scalability of the approach to several ten thousand devices is demonstrated.

  16. Observation of red electroluminescence from an Eu2O3/ p +-Si device and improved performance by introducing a Tb2O3 layer

    International Nuclear Information System (INIS)

    Yin, Xue; Wang, Shenwei; Mu, Guangyao; Wan, Guangmiao; Huang, Miaoling; Yi, Lixin

    2017-01-01

    We report red electroluminescence (EL) from an Eu 2 O 3 / p + -Si device with Eu 2 O 3 film annealed in oxygen ambient at 700 °C. The red EL is ascribed to the characteristic emissions of Eu 3+ ions in Eu 2 O 3 film and the luminescence mechanism is discussed in detail. In order to optimize the device performance, Eu 2 O 3 /Tb 2 O 3 multiple films were deposited on Si wafer, and the result showed EL intensity of the device was obviously enhanced and the turn-on voltage was reduced to about 10 V. Moreover, intensity ratio I ( 5 D 0 – 7 F 2 )/ I ( 5 D 0 – 7 F 1 ) was also significantly increased with the hypersensitive transition 5 D 0 – 7 F 2 as the most prominent group at about 611 nm. The improved performance was attributed to the added Tb 2 O 3 film that it can be served as the hole-injection layer to afford extra holes injected into the Eu 2 O 3 layer. (paper)

  17. Underwater Acoustic Wireless Sensor Networks: Advances and Future Trends in Physical, MAC and Routing Layers

    NARCIS (Netherlands)

    Climent, S.; Sanchez, A.; Capella, J.V.; Meratnia, Nirvana; Serrano, J.J.

    2014-01-01

    This survey aims to provide a comprehensive overview of the current research on underwater wireless sensor networks, focusing on the lower layers of the communication stack, and envisions future trends and challenges. It analyzes the current state-of-the-art on the physical, medium access control

  18. Systems and methods for scalable perovskite device fabrication

    Science.gov (United States)

    Huang, Jinsong; Dong, Qingfeng; Sao, Yuchuan

    2017-02-28

    Continuous processes for fabricating a perovskite device are described that include using a doctor blade for continuously forming a perovskite layer and using a conductive tape lamination process to form an anode or a cathode layer on the perovskite device.

  19. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  20. Photosensitive Layer-by-Layer Assemblies Containing Azobenzene Groups: Synthesis and Biomedical Applications

    Directory of Open Access Journals (Sweden)

    Uichi Akiba

    2017-10-01

    Full Text Available This review provides an overview of the syntheses of photosensitive layer-by-layer (LbL films and microcapsules modified with azobenzene derivatives and their biomedical applications. Photosensitive LbL films and microcapsules can be prepared by alternate deposition of azobenzene-bearing polymers and counter polymers on the surface of flat substrates and microparticles, respectively. Azobenzene residues in the films and microcapsules exhibit trans-to-cis photoisomerization under UV light, which causes changes in the physical or chemical properties of the LbL assemblies. Therefore, azobenzene-functionalized LbL films and microcapsules have been used for the construction of photosensitive biomedical devices. For instance, cell adhesion on the surface of a solid can be controlled by UV light irradiation by coating the surface with azobenzene-containing LbL films. In another example, the ion permeability of porous materials coated with LbL films can be regulated by UV light irradiation. Furthermore, azobenzene-containing LbL films and microcapsules have been used as carriers for drug delivery systems sensitive to light. UV light irradiation triggers permeability changes in the LbL films and/or decomposition of the microcapsules, which results in the release of encapsulated drugs and proteins.

  1. Multi-layered pallet and production method and device therefor

    International Nuclear Information System (INIS)

    Sudo, Shigeru.

    1995-01-01

    The present invention concerns the production of a solid tritium pellet for use in a thermonuclear reactor. A first pellet constituent material constituting an outer layer of the pellet is solidified under cooling to form a solidification product for the pellet. A cave is formed on one end face of the pellet solidification product. A second pellet constituent material constituting an inner layer of the pellet is supplied and solidified under cooling. After scraping a predetermined amount of the other end face of the pellet solidification material, the first pellet constituent material is additionally supplied and solidified under cooling. The size and the relative position of each of layers can be determined definitely and the inner layer can be formed reliably while fuels can be accurately supplied with no loss to a required portion in plasma. (N.H.)

  2. Devices for Self-Monitoring Sedentary Time or Physical Activity: A Scoping Review.

    Science.gov (United States)

    Sanders, James P; Loveday, Adam; Pearson, Natalie; Edwardson, Charlotte; Yates, Thomas; Biddle, Stuart J H; Esliger, Dale W

    2016-05-04

    It is well documented that meeting the guideline levels (150 minutes per week) of moderate-to-vigorous physical activity (PA) is protective against chronic disease. Conversely, emerging evidence indicates the deleterious effects of prolonged sitting. Therefore, there is a need to change both behaviors. Self-monitoring of behavior is one of the most robust behavior-change techniques available. The growing number of technologies in the consumer electronics sector provides a unique opportunity for individuals to self-monitor their behavior. The aim of this study is to review the characteristics and measurement properties of currently available self-monitoring devices for sedentary time and/or PA. To identify technologies, four scientific databases were systematically searched using key terms related to behavior, measurement, and population. Articles published through October 2015 were identified. To identify technologies from the consumer electronic sector, systematic searches of three Internet search engines were also performed through to October 1, 2015. The initial database searches identified 46 devices and the Internet search engines identified 100 devices yielding a total of 146 technologies. Of these, 64 were further removed because they were currently unavailable for purchase or there was no evidence that they were designed for, had been used in, or could readily be modified for self-monitoring purposes. The remaining 82 technologies were included in this review (73 devices self-monitored PA, 9 devices self-monitored sedentary time). Of the 82 devices included, this review identified no published articles in which these devices were used for the purpose of self-monitoring PA and/or sedentary behavior; however, a number of technologies were found via Internet searches that matched the criteria for self-monitoring and provided immediate feedback on PA (ActiGraph Link, Microsoft Band, and Garmin Vivofit) and sedentary time (activPAL VT, the Lumo Back, and Darma

  3. Epitaxial growth of silicon for layer transfer

    Science.gov (United States)

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  4. Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, I.H.; Rubin, S.; Zawodzinski, T.A.; Kress, J.D.; Martin, R.L.; Smith, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas 75083 (United States)

    1996-11-01

    We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy], 5-(2{prime}-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM{close_quote}s) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM{close_quote}s on the Ag surface potential. {ital Ab} {ital initio} Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices. {copyright} {ital 1996 The American Physical Society.}

  5. Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers

    International Nuclear Information System (INIS)

    Campbell, I.H.; Rubin, S.; Zawodzinski, T.A.; Kress, J.D.; Martin, R.L.; Smith, D.L.; Barashkov, N.N.; Ferraris, J.P.

    1996-01-01

    We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy], 5-(2'-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM close-quote s) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM close-quote s on the Ag surface potential. Ab initio Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices. copyright 1996 The American Physical Society

  6. Physical properties of smectic C liquid crystal cells

    International Nuclear Information System (INIS)

    Dunn, P.E.

    1998-01-01

    The aim of this work was to investigate some of the fundamental physical properties of surface stabilised ferroelectric liquid crystal devices (SSFLCDs) using optical, electrical and x-ray diffraction techniques. The measured physical parameters are then related to the performance of display devices. Refractometry measurements on homeotropically aligned FLC samples are used to accurately determine the smectic cone angle and information is also gained on FLC biaxial order. Propagation of optically excited guided modes along liquid crystalline layers is then used to obtain detailed director configuration information. Wavelength dependent extinction angle spectroscopy is also used to extract smectic C director profiles, albeit with a slightly lower accuracy than the guided mode method. A triangular director profile model is found to describe the wavelength dependent extinction angle properties of achiral samples, and examination of the cell spacing dependence of the director profile enables a ratio of bulk elasticity to surface anchoring energy to be determined. Information is obtained on the behaviour of smectic C materials under high frequency electric fields using a continuum director profile model, providing a novel measurement of bend and splay elastic constants. Additionally an extension of the wavelength dependent extinction angle technique allows half splayed states to be characterised. A variety of simple electro-optic techniques are used to characterise several key material parameters. Polarisation reversal current is used to measure both the spontaneous polarisation and an effective FLC switching viscosity. Monochromatic extinction angle measurements under applied d.c. fields are used to determine the cone and layer tilt angles, whilst a comparison of d.c. and a.c. extinction angle characteristics provides an estimate of the dielectric biaxiality. An automated measurement technique is used to determine FLC response time characteristics, which are described

  7. Physical properties of smectic C liquid crystal cells

    Energy Technology Data Exchange (ETDEWEB)

    Dunn, P E

    1998-07-01

    The aim of this work was to investigate some of the fundamental physical properties of surface stabilised ferroelectric liquid crystal devices (SSFLCDs) using optical, electrical and x-ray diffraction techniques. The measured physical parameters are then related to the performance of display devices. Refractometry measurements on homeotropically aligned FLC samples are used to accurately determine the smectic cone angle and information is also gained on FLC biaxial order. Propagation of optically excited guided modes along liquid crystalline layers is then used to obtain detailed director configuration information. Wavelength dependent extinction angle spectroscopy is also used to extract smectic C director profiles, albeit with a slightly lower accuracy than the guided mode method. A triangular director profile model is found to describe the wavelength dependent extinction angle properties of achiral samples, and examination of the cell spacing dependence of the director profile enables a ratio of bulk elasticity to surface anchoring energy to be determined. Information is obtained on the behaviour of smectic C materials under high frequency electric fields using a continuum director profile model, providing a novel measurement of bend and splay elastic constants. Additionally an extension of the wavelength dependent extinction angle technique allows half splayed states to be characterised. A variety of simple electro-optic techniques are used to characterise several key material parameters. Polarisation reversal current is used to measure both the spontaneous polarisation and an effective FLC switching viscosity. Monochromatic extinction angle measurements under applied d.c. fields are used to determine the cone and layer tilt angles, whilst a comparison of d.c. and a.c. extinction angle characteristics provides an estimate of the dielectric biaxiality. An automated measurement technique is used to determine FLC response time characteristics, which are described

  8. User Experience of Mobile Devices

    DEFF Research Database (Denmark)

    Raptis, Dimitrios

    that the overall physical form of a mobile device has a significant effect on the perceived usability of an application: the more attractive the physical form, the higher the perceived usability. The other study validated the effect of a particular physical form element on usability and showed that the screen size......This thesis focuses on mobile devices and it specifically investigates the effect of their physical form on two perceived user experience qualities, usability and coolness. With the term mobile devices, I refer to interactive products that users interact with while being on the move......, and with the term physical form I refer to the physical elements that constitute a mobile device as a whole, such as weight, size and materials. The selected research area was addressed through two research questions, one focusing on effects of physical form on usability and the other on effects on coolness...

  9. Design and validation of a microfluidic device for blood-brain barrier monitoring and transport studies

    Science.gov (United States)

    Ugolini, Giovanni Stefano; Occhetta, Paola; Saccani, Alessandra; Re, Francesca; Krol, Silke; Rasponi, Marco; Redaelli, Alberto

    2018-04-01

    In vitro blood-brain barrier models are highly relevant for drug screening and drug development studies, due to the challenging task of understanding the transport mechanism of drug molecules through the blood-brain barrier towards the brain tissue. In this respect, microfluidics holds potential for providing microsystems that require low amounts of cells and reagent and can be potentially multiplexed for increasing the ease and throughput of the drug screening process. We here describe the design, development and validation of a microfluidic device for endothelial blood-brain barrier cell transport studies. The device comprises of two microstructured layers (top culture chamber and bottom collection chamber) sandwiching a porous membrane for the cell culture. Microstructured layers include two pairs of physical electrodes, embedded into the device layers by geometrically defined guiding channels with computationally optimized positions. These electrodes allow the use of commercial electrical measurement systems for monitoring trans-endothelial electrical resistance (TEER). We employed the designed device for performing preliminary assessment of endothelial barrier formation with murine brain endothelial cells (Br-bEnd5). Results demonstrate that cellular junctional complexes effectively form in the cultures (expression of VE-Cadherin and ZO-1) and that the TEER monitoring systems effectively detects an increase of resistance of the cultured cell layers indicative of tight junction formation. Finally, we validate the use of the described microsystem for drug transport studies demonstrating that Br-bEnd5 cells significantly hinder the transport of molecules (40 kDa and 4 kDa dextran) from the top culture chamber to the bottom collection chamber.

  10. Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer

    International Nuclear Information System (INIS)

    Son, Dong-Ick; Kim, Ji-Hwan; Park, Dong-Hee; Choi, Won Kook; Li, Fushan; Ham, Jung Hun; Kim, Tae Whan

    2008-01-01

    The bistable effects of CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole (PVK) polymer layer by using flexible poly-vinylidene difluoride (PVDF) and polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that CdSe/ZnS nanoparticles were formed inside the PVK polymer layer. Current-voltage (I-V) measurement on the Al/[CdSe/ZnS nanoparticles+ PVK]/ITO/PVDF and Al/[CdSe/ZnS nanoparticles+ PVK ]/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the CdSe/ZnS nanoparticles, indicative of trapping, storing and emission of charges in the electronic states of the CdSe nanoparticles. A bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results. These results indicate that OBDs fabricated by embedding inorganic CdSe/ZnS nanoparticles in a conducting polymer matrix on flexible substrates are prospects for potential applications in flexible nonvolatile flash memory devices

  11. Corrosion processes of physical vapor deposition-coated metallic implants.

    Science.gov (United States)

    Antunes, Renato Altobelli; de Oliveira, Mara Cristina Lopes

    2009-01-01

    Protecting metallic implants from the harsh environment of physiological fluids is essential to guaranteeing successful long-term use in a patient's body. Chemical degradation may lead to the failure of an implant device in two different ways. First, metal ions may cause inflammatory reactions in the tissues surrounding the implant and, in extreme cases, these reactions may inflict acute pain on the patient and lead to loosening of the device. Therefore, increasing wear strength is beneficial to the performance of the metallic implant. Second, localized corrosion processes contribute to the nucleation of fatigue cracks, and corrosion fatigue is the main reason for the mechanical failure of metallic implants. Common biomedical alloys such as stainless steel, cobalt-chrome alloys, and titanium alloys are prone to at least one of these problems. Vapor-deposited hard coatings act directly to improve corrosion, wear, and fatigue resistances of metallic materials. The effectiveness of the corrosion protection is strongly related to the structure of the physical vapor deposition layer. The aim of this paper is to present a comprehensive review of the correlation between the structure of physical vapor deposition layers and the corrosion properties of metallic implants.

  12. Physical modeling of SOS P channel MOSFET and comparison with bulk devices

    International Nuclear Information System (INIS)

    Merckel, G.; Gris, Y.

    1976-01-01

    The main technological steps applied to P channel MOSFET's on SOS are recalled. A large-signal model derived from a physical analysis is presented. Gate-source and gate-drain capacitors have been linearized versus drain voltage. Due to low injection, the only diffusion capacitance of the source-substrate forward biased diode, and the depletion capacitance of the drain-substrate reverse biased diode were taken into account. Some typical parameters measured on SOS and bulk devices are given [fr

  13. Heterojunction PbS nanocrystal solar cells with oxide charge-transport layers.

    Science.gov (United States)

    Hyun, Byung-Ryool; Choi, Joshua J; Seyler, Kyle L; Hanrath, Tobias; Wise, Frank W

    2013-12-23

    Oxides are commonly employed as electron-transport layers in optoelectronic devices based on semiconductor nanocrystals, but are relatively rare as hole-transport layers. We report studies of NiO hole-transport layers in PbS nanocrystal photovoltaic structures. Transient fluorescence experiments are used to verify the relevant energy levels for hole transfer. On the basis of these results, planar heterojunction devices with ZnO as the photoanode and NiO as the photocathode were fabricated and characterized. Solution-processed devices were used to systematically study the dependence on nanocrystal size and achieve conversion efficiency as high as 2.5%. Optical modeling indicates that optimum performance should be obtained with thinner oxide layers than can be produced reliably by solution casting. Room-temperature sputtering allows deposition of oxide layers as thin as 10 nm, which enables optimization of device performance with respect to the thickness of the charge-transport layers. The best devices achieve an open-circuit voltage of 0.72 V and efficiency of 5.3% while eliminating most organic material from the structure and being compatible with tandem structures.

  14. Recent advances in polymer solar cells: realization of high device performance by incorporating water/alcohol-soluble conjugated polymers as electrode buffer layer.

    Science.gov (United States)

    He, Zhicai; Wu, Hongbin; Cao, Yong

    2014-02-01

    This Progress Report highlights recent advances in polymer solar cells with special attention focused on the recent rapid-growing progress in methods that use a thin layer of alcohol/water-soluble conjugated polymers as key component to obtain optimized device performance, but also discusses novel materials and device architectures made by major prestigious institutions in this field. We anticipate that due to drastic improvements in efficiency and easy utilization, this method opens up new opportunities for PSCs from various material systems to improve towards 10% efficiency, and many novel device structures will emerge as suitable architectures for developing the ideal roll-to-roll type processing of polymer-based solar cells. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Physical and Chemical Interactions between Mg:Al Layered Double Hydroxide and Hexacyanoferrate

    Science.gov (United States)

    Boclair, Joseph W.; Braterman, Paul S.; Brister, Brian D.; Wang, Zhiming; Yarberry, Faith

    2001-11-01

    The physical and chemical interactions of ferrocyanide (potassium and ammonium salts) and ferricyanide (potassium salt) with Mg:Al layered double hydroxides (LDH) (having Mg:Al ratios of 2 and 3) are investigated using powder XRD and FTIR spectroscopy. Physically, the potassium ferricyanide is shown to intercalate with a small local field deformation similar to that seen for hexacyanocobaltate (III) in similar materials. Chemically, the reduction of ferricyanide to ferrocyanide upon intercalation is confirmed. Physical interactions of ferrocyanide with 3:1 LDH are shown spectroscopically to include the possible generation of anions in differing environments. Chemically, ferrocyanide is shown to generate cubic ferrocyanides (of the type M2MgFe(CN)6, where M=K+ or NH+4) under conditions where free Mg2+ is likely present in solution, namely, solutions with a pH lower than ∼7.5. It is shown that the reported 2112-cm-1 band found in some chemically altered LDH ferrocyanide is indeed due to interlayer ferricyanide, but that the 2080 cm-1 band is due to the cubic material.

  16. Se interlayer in CIGS absorption layer for solar cell devices

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung-Kyu; Sim, Jae-Kwan [Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development, Chonbuk National University, Deokjin-Dong 664-14, Jeonju 561-756 (Korea, Republic of); Kissinger, N.J. Suthan [Department of General Studies, Physics Group, Jubail University College, Royal Commission for Jubail, Jubail 10074 (Saudi Arabia); Song, Il-Seok; Kim, Jin-Soo; Baek, Byung-Joon [Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development, Chonbuk National University, Deokjin-Dong 664-14, Jeonju 561-756 (Korea, Republic of); Lee, Cheul-Ro, E-mail: crlee7@jbnu.ac.kr [Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development, Chonbuk National University, Deokjin-Dong 664-14, Jeonju 561-756 (Korea, Republic of)

    2015-06-05

    Highlights: • Se interlayer is deposited between the CuGa and CuIn/In/Mo/STS stacked layer. • Both CIG precursor layers were selenized at 500 °C for 1 h. • SIMS depth profile shows that Ga distribution is uniform by Se interlayer. • The efficiency was improved for the CIGS solar cell by Se interlayer. - Abstract: A CIGS absorber layer with high gallium contents in the space-charge region can reduce the carrier recombination and improve the open circuit voltage V{sub oc}. Therefore, controlling Ga grading on top of CIGS thin film solar cells is the main objective of this experiment. To reduce Selenium (Se) vacancy, it is important that the diffusion of Ga elements into Se vacancy between Mo back contact and CIGS absorption layer would be controlled. In order to reduce Se vacancy and confirm Ga inter-diffusion, two CIGS solar cells were fabricated by converting CIG precursor with and without Se interlayer. The copper-indium metallic precursors were fabricated corresponding to the sequence CuIn/In/Mo/STS on stainless steel (STS) substrates by sequential direct current magnetron sputtering while Se layer was evaporated by rapid thermal annealing (RTA) system to obtain a Se/CuIn/In/Mo/STS stack. CuGa precursor layer was also fabricated on the Se/CuIn/In/Mo/STS stack. Finally, both CuGa/Se/CuIn/In/Mo/STS and CuGa/CuIn/In/Mo/STS stacks were selenized at 500 °C for 1 h. It was clearly observed from the secondary ion mass spectroscopy (SIMS) and X-ray diffraction (XRD) that there was a change between the fabricated CIGS absorption layers and the amount of Ga elements. Furthermore, the Ga elements gradually decreased from the top to the bottom layer of the CIGS absorption layer. We also discussed the effect of Se interlayer in the CIGS absorption layer and its influence on the solar cell’s performance.

  17. Se interlayer in CIGS absorption layer for solar cell devices

    International Nuclear Information System (INIS)

    Lee, Seung-Kyu; Sim, Jae-Kwan; Kissinger, N.J. Suthan; Song, Il-Seok; Kim, Jin-Soo; Baek, Byung-Joon; Lee, Cheul-Ro

    2015-01-01

    Highlights: • Se interlayer is deposited between the CuGa and CuIn/In/Mo/STS stacked layer. • Both CIG precursor layers were selenized at 500 °C for 1 h. • SIMS depth profile shows that Ga distribution is uniform by Se interlayer. • The efficiency was improved for the CIGS solar cell by Se interlayer. - Abstract: A CIGS absorber layer with high gallium contents in the space-charge region can reduce the carrier recombination and improve the open circuit voltage V oc . Therefore, controlling Ga grading on top of CIGS thin film solar cells is the main objective of this experiment. To reduce Selenium (Se) vacancy, it is important that the diffusion of Ga elements into Se vacancy between Mo back contact and CIGS absorption layer would be controlled. In order to reduce Se vacancy and confirm Ga inter-diffusion, two CIGS solar cells were fabricated by converting CIG precursor with and without Se interlayer. The copper-indium metallic precursors were fabricated corresponding to the sequence CuIn/In/Mo/STS on stainless steel (STS) substrates by sequential direct current magnetron sputtering while Se layer was evaporated by rapid thermal annealing (RTA) system to obtain a Se/CuIn/In/Mo/STS stack. CuGa precursor layer was also fabricated on the Se/CuIn/In/Mo/STS stack. Finally, both CuGa/Se/CuIn/In/Mo/STS and CuGa/CuIn/In/Mo/STS stacks were selenized at 500 °C for 1 h. It was clearly observed from the secondary ion mass spectroscopy (SIMS) and X-ray diffraction (XRD) that there was a change between the fabricated CIGS absorption layers and the amount of Ga elements. Furthermore, the Ga elements gradually decreased from the top to the bottom layer of the CIGS absorption layer. We also discussed the effect of Se interlayer in the CIGS absorption layer and its influence on the solar cell’s performance

  18. Molecular Intercalation and Cohesion of Organic Bulk Heterojunction Photovoltaic Devices

    KAUST Repository

    Bruner, Christopher; Miller, Nichole C.; McGehee, Michael D.; Dauskardt, Reinhold H.

    2013-01-01

    The phase separated bulk heterojunction (BHJ) layer in BHJ polymer:fullerene organic photovoltaic devices (OPV) are mechanically weak with low values of cohesion. Improved cohesion is important for OPV device thermomechanical reliability. BHJ devices are investigated and how fullerene intercalation within the active layer affects cohesive properties in the BHJ is shown. The intercalation of fullerenes between the side chains of the polymers poly(3,3″′-didocecyl quaterthiophene) (PQT-12) and poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene (pBTTT) is shown to enhance BHJ layer cohesion. Cohesion values range from ≈1 to 5 J m -2, depending on the polymer:fullerene blend, processing conditions, and composition. Devices with non-intercalated BHJ layers are found to have significantly reduced values of cohesion. The resulting device power conversion efficiencies (PCE) are also investigated and correlated with the device cohesion. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Molecular Intercalation and Cohesion of Organic Bulk Heterojunction Photovoltaic Devices

    KAUST Repository

    Bruner, Christopher

    2013-01-17

    The phase separated bulk heterojunction (BHJ) layer in BHJ polymer:fullerene organic photovoltaic devices (OPV) are mechanically weak with low values of cohesion. Improved cohesion is important for OPV device thermomechanical reliability. BHJ devices are investigated and how fullerene intercalation within the active layer affects cohesive properties in the BHJ is shown. The intercalation of fullerenes between the side chains of the polymers poly(3,3″′-didocecyl quaterthiophene) (PQT-12) and poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene (pBTTT) is shown to enhance BHJ layer cohesion. Cohesion values range from ≈1 to 5 J m -2, depending on the polymer:fullerene blend, processing conditions, and composition. Devices with non-intercalated BHJ layers are found to have significantly reduced values of cohesion. The resulting device power conversion efficiencies (PCE) are also investigated and correlated with the device cohesion. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Near-surface viscosity measurements with a love acoustic wave device

    International Nuclear Information System (INIS)

    Collings, A.F.; Cooper, B.J.; Lappas, S.; Sor, J.A.

    1999-01-01

    Full text: In the last decade, considerable research effort has been directed towards interfacing piezoelectric transducers with biological detection systems to produce efficient and highly selective biosensors. Several types of piezoelectric or, more specifically, acoustic wave transducers have been investigated. Our group has developed Love wave (guided surface skimming wave) devices which are made by attaching a thin overlayer with the appropriate acoustic properties to the surface of a conventional surface horizontal mode device. An optimised layer concentrates most of the propagating wave energy in the guiding layer and can improve the device sensitivity in detecting gas-phase mass loading on the surface some 20- to 40-fold. Love wave devices used in liquid phase sensing will also respond to viscous, as well as mass, loading on the device surface. We have studied the propagation of viscous waves into liquid sitting on a Love wave device both theoretically and experimentally. Modelling of the effect of a viscous liquid layer on a Love wave propagating in a layered medium predicts the velocity profile in the solid substrate and in the adjoining liquid. This is a function of the thickness of the guiding layer, the elastic properties of the guiding layer and the piezoelectric substrate, and of the viscosity and density of the liquid layer. We report here on measurements of the viscosity of aqueous glycerine solutions made with a quartz Love wave device with a 5.5 μm SiO 2 guiding layer. The linear relationship between the decrease in the device frequency and the square root of the viscosity density product is accurately observed at Newtonian viscosities. At higher viscosities, there is an increase in damping, the insertion loss of the device saturates, Δf is no longer proportional to (ηp) l/2 and reaches a maximum. We also show results for the determination of the gelation time in protein and inorganic aqueous gels and for the rate of change of viscosity with

  1. A Review of Atomic Layer Deposition for Nanoscale Devices

    Directory of Open Access Journals (Sweden)

    Edy Riyanto

    2012-12-01

    Full Text Available Atomic layer deposition (ALD is a thin film growth technique that utilizes alternating, self-saturation chemical reactions between gaseous precursors to achieve a deposited nanoscale layers. It has recently become a subject of great interest for ultrathin film deposition in many various applications such as microelectronics, photovoltaic, dynamic random access memory (DRAM, and microelectromechanic system (MEMS. By using ALD, the conformability and extreme uniformity of layers can be achieved in low temperature process. It facilitates to be deposited onto the surface in many variety substrates that have low melting temperature. Eventually it has advantages on the contribution to the wider nanodevices.

  2. Code-Hopping Based Transmission Scheme for Wireless Physical-Layer Security

    Directory of Open Access Journals (Sweden)

    Liuguo Yin

    2018-01-01

    Full Text Available Due to the broadcast and time-varying natures of wireless channels, traditional communication systems that provide data encryption at the application layer suffer many challenges such as error diffusion. In this paper, we propose a code-hopping based secrecy transmission scheme that uses dynamic nonsystematic low-density parity-check (LDPC codes and automatic repeat-request (ARQ mechanism to jointly encode and encrypt source messages at the physical layer. In this scheme, secret keys at the transmitter and the legitimate receiver are generated dynamically upon the source messages that have been transmitted successfully. During the transmission, each source message is jointly encoded and encrypted by a parity-check matrix, which is dynamically selected from a set of LDPC matrices based on the shared dynamic secret key. As for the eavesdropper (Eve, the uncorrectable decoding errors prevent her from generating the same secret key as the legitimate parties. Thus she cannot select the correct LDPC matrix to recover the source message. We demonstrate that our scheme can be compatible with traditional cryptosystems and enhance the security without sacrificing the error-correction performance. Numerical results show that the bit error rate (BER of Eve approaches 0.5 as the number of transmitted source messages increases and the security gap of the system is small.

  3. Electronic devices and circuits

    CERN Document Server

    Pridham, Gordon John

    1972-01-01

    Electronic Devices and Circuits, Volume 3 provides a comprehensive account on electronic devices and circuits and includes introductory network theory and physics. The physics of semiconductor devices is described, along with field effect transistors, small-signal equivalent circuits of bipolar transistors, and integrated circuits. Linear and non-linear circuits as well as logic circuits are also considered. This volume is comprised of 12 chapters and begins with an analysis of the use of Laplace transforms for analysis of filter networks, followed by a discussion on the physical properties of

  4. A Medical Delivery Device

    DEFF Research Database (Denmark)

    2010-01-01

    The present invention relates to a medical delivery device comprising at least two membrane electrode assembly units each of which comprises three layers: an upper and a lower electrode and a selective ionic conductive membrane provided there-between. At least one of the three layers are shared...

  5. Numerical simulation of current-free double layers created in a helicon plasma device

    Science.gov (United States)

    Rao, Sathyanarayan; Singh, Nagendra

    2012-09-01

    Two-dimensional simulations reveal that when radially confined source plasma with magnetized electrons and unmagnetized ions expands into diverging magnetic field B, a current-free double layer (CFDL) embedded in a conical density structure forms, as experimentally measured in the Australian helicon plasma device (HPD). The magnetized electrons follow the diverging B while the unmagnetized ions tend to flow directly downstream of the source, resulting in a radial electric field (E⊥) structure, which couples the ion and electron flows. Ions are transversely (radially) accelerated by E⊥ on the high potential side of the double layer in the CFDL. The accelerated ions are trapped near the conical surface, where E⊥ reverses direction. The potential structure of the CFDL is U-shaped and the plasma density is enhanced on the conical surface. The plasma density is severely depleted downstream of the parallel potential drop (φ||o) in the CFDL; the density depletion and the potential drop are related by quasi-neutrality condition, including the divergence in the magnetic field and in the plasma flow in the conical structure. The potential and density structures, the CFDL spatial size, its electric field strengths and the electron and ion velocities and energy distributions in the CFDL are found to be in good agreements with those measured in the Australian experiment. The applicability of our results to measured axial potential profiles in magnetic nozzle experiments in HPDs is discussed.

  6. Mobile and Wearable Device Features that Matter in Promoting Physical Activity.

    Science.gov (United States)

    Wang, Julie B; Cataldo, Janine K; Ayala, Guadalupe X; Natarajan, Loki; Cadmus-Bertram, Lisa A; White, Martha M; Madanat, Hala; Nichols, Jeanne F; Pierce, John P

    2016-07-01

    As wearable sensors/devices become increasingly popular to promote physical activity (PA), research is needed to examine how and which components of these devices people use to increase their PA levels. (1) To assess usability and level of engagement with the Fitbit One and daily SMS-based prompts in a 6-week PA intervention, and (2) to examine whether use/ level of engagement with specific intervention components were associated with PA change. Data were analyzed from a randomized controlled trial that compared (1) a wearable sensor/ device (Fitbit One) plus SMS-based PA prompts, and (2) Fitbit One only, among overweight/ obese adults (N = 67). We calculated average scores from Likert-type response items that assessed usability and level of engagement with device features (e.g., tracker, website, mobile app, and SMS-based prompts), and assessed whether such factors were associated with change in steps/day (using Actigraph GT3X+). Participants reported the Fitbit One was easy to use and the tracker helped to be more active. Those who used the Fitbit mobile app (36%) vs. those who did not (64%) had an increase in steps at 6-week follow-up, even after adjusting for previous web/app use: +545 steps/ day ( SE = 265) vs. -28 steps/ day ( SE = 242) ( p = .04). Level of engagement with the Fitbit One, particularly the mobile app, was associated with increased steps. Mobile apps can instantly display summaries of PA performance and could optimize self-regulation to activate change. More research is needed to determine whether such modalities might be cost-effective in future intervention research and practice.

  7. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  8. Desktop aligner for fabrication of multilayer microfluidic devices.

    Science.gov (United States)

    Li, Xiang; Yu, Zeta Tak For; Geraldo, Dalton; Weng, Shinuo; Alve, Nitesh; Dun, Wu; Kini, Akshay; Patel, Karan; Shu, Roberto; Zhang, Feng; Li, Gang; Jin, Qinghui; Fu, Jianping

    2015-07-01

    Multilayer assembly is a commonly used technique to construct multilayer polydimethylsiloxane (PDMS)-based microfluidic devices with complex 3D architecture and connectivity for large-scale microfluidic integration. Accurate alignment of structure features on different PDMS layers before their permanent bonding is critical in determining the yield and quality of assembled multilayer microfluidic devices. Herein, we report a custom-built desktop aligner capable of both local and global alignments of PDMS layers covering a broad size range. Two digital microscopes were incorporated into the aligner design to allow accurate global alignment of PDMS structures up to 4 in. in diameter. Both local and global alignment accuracies of the desktop aligner were determined to be about 20 μm cm(-1). To demonstrate its utility for fabrication of integrated multilayer PDMS microfluidic devices, we applied the desktop aligner to achieve accurate alignment of different functional PDMS layers in multilayer microfluidics including an organs-on-chips device as well as a microfluidic device integrated with vertical passages connecting channels located in different PDMS layers. Owing to its convenient operation, high accuracy, low cost, light weight, and portability, the desktop aligner is useful for microfluidic researchers to achieve rapid and accurate alignment for generating multilayer PDMS microfluidic devices.

  9. Oxygen-reducing catalyst layer

    Science.gov (United States)

    O'Brien, Dennis P [Maplewood, MN; Schmoeckel, Alison K [Stillwater, MN; Vernstrom, George D [Cottage Grove, MN; Atanasoski, Radoslav [Edina, MN; Wood, Thomas E [Stillwater, MN; Yang, Ruizhi [Halifax, CA; Easton, E Bradley [Halifax, CA; Dahn, Jeffrey R [Hubley, CA; O'Neill, David G [Lake Elmo, MN

    2011-03-22

    An oxygen-reducing catalyst layer, and a method of making the oxygen-reducing catalyst layer, where the oxygen-reducing catalyst layer includes a catalytic material film disposed on a substrate with the use of physical vapor deposition and thermal treatment. The catalytic material film includes a transition metal that is substantially free of platinum. At least one of the physical vapor deposition and the thermal treatment is performed in a processing environment comprising a nitrogen-containing gas.

  10. Ion - beam assisted process in the physical deposition of organic thin layers

    Energy Technology Data Exchange (ETDEWEB)

    Dimov, D; Spassova, E; Assa, J; Danev, G [Acad. J .Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl.109, 1113 Sofia (Bulgaria); Georgiev, A, E-mail: dean@clf.bas.b [University of Chemical Technology and Metallurgy, 8 Kl. Ohridski Blvd., 1756 Sofia (Bulgaria)

    2010-04-01

    A novel method was developed for physical deposition of thin polyimide layers by applying an argon plasma assisted process. The influence was investigated of the plasma on the combined molecular flux of the two thermally evaporated precursors - oxydianiline and pyromellitic dianhydride. The effects observed on the properties of the deposited films are explained with the increased energy of the precursor molecules resulting from the ion-molecular collisions. As could be expected, molecules with higher energy possess higher mobility and thus determine the modification of the films structure and their electrical properties.

  11. Transmission electron microscopy assessment of conductive-filament formation in Ni-HfO2-Si resistive-switching operational devices

    Science.gov (United States)

    Martín, Gemma; González, Mireia B.; Campabadal, Francesca; Peiró, Francesca; Cornet, Albert; Estradé, Sònia

    2018-01-01

    Resistive random-access memory (ReRAM) devices are currently the object of extensive research to replace flash non-volatile memory. However, elucidation of the conductive-filament formation mechanisms in ReRAM devices at nanoscale is mandatory. In this study, the different states created under real operation conditions of HfO2-based ReRAM devices are characterized through transmission electron microscopy and electron energy-loss spectroscopy. The physical mechanism behind the conductive-filament formation in Ni/HfO2/Si ReRAM devices based on the diffusion of Ni from the electrode to the Si substrate and of Si from the substrate to the electrode through the HfO2 layer is demonstrated.

  12. [Precautions of physical performance requirements and test methods during product standard drafting process of medical devices].

    Science.gov (United States)

    Song, Jin-Zi; Wan, Min; Xu, Hui; Yao, Xiu-Jun; Zhang, Bo; Wang, Jin-Hong

    2009-09-01

    The major idea of this article is to discuss standardization and normalization for the product standard of medical devices. Analyze the problem related to the physical performance requirements and test methods during product standard drafting process and make corresponding suggestions.

  13. ZnO/AlN diamond layered structure for SAW devices combining higl velocity and high electromechanical coupling coefficient

    Czech Academy of Sciences Publication Activity Database

    El Hakiki, M.; Elmazria, O.; Assouar, M.B.; Mortet, V.; Le Brizoual, L.; Vaněček, Milan; Alnot, P.

    2005-01-01

    Roč. 14, - (2005), s. 1175-1178 ISSN 0925-9635 EU Projects: European Commission(XE) HPRN-CT-1999-00139 Institutional research plan: CEZ:AV0Z10100521 Keywords : aluminium nitride * zinc oxide * diamond * surface acoustic wave devices Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.988, year: 2005

  14. Control of metamorphic buffer structure and device performance of In(x)Ga(1-x)As epitaxial layers fabricated by metal organic chemical vapor deposition.

    Science.gov (United States)

    Nguyen, H Q; Yu, H W; Luc, Q H; Tang, Y Z; Phan, V T H; Hsu, C H; Chang, E Y; Tseng, Y C

    2014-12-05

    Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique's precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (∼10(6) cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (∼80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 × 10(12) eV(-1) cm(-2) in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.

  15. The next generation mass storage devices - Physical principles and current status

    Science.gov (United States)

    Wang, L.; Gai, S.

    2014-04-01

    The amount of digital data today has been increasing at a phenomenal rate due to the widespread digitalisation service in almost every industry. The need to store such ever-increasing data aggressively triggers the requirement to augment the storage capacity of the conventional storage technologies. Unfortunately, the physical limitations that conventional forms face have severely handicapped their potential to meet the storage need from both consumer and industry point of view. The focus has therefore been switched into the development of the innovative data storage technologies such as scanning probe memory, nanocrystal memory, carbon nanotube memory, DNA memory, and organic memory. In this paper, we review the physical principles of these emerging storage technologies and their superiorities as the next generation data storage device, as well as their respective technical challenges on further enhancing the storage capacity. We also compare these novel technologies with the mainstream data storage means according to the technology roadmap on areal density.

  16. Physical-layer Network Coding in Two-Way Heterogeneous Cellular Networks with Power Imbalance

    OpenAIRE

    Thampi, Ajay K; Liew, Soung Chang; Armour, Simon M D; Fan, Zhong; You, Lizhao; Kaleshi, Dritan

    2016-01-01

    The growing demand for high-speed data, quality of service (QoS) assurance and energy efficiency has triggered the evolution of 4G LTE-A networks to 5G and beyond. Interference is still a major performance bottleneck. This paper studies the application of physical-layer network coding (PNC), a technique that exploits interference, in heterogeneous cellular networks. In particular, we propose a rate-maximising relay selection algorithm for a single cell with multiple relays assuming the decode...

  17. Simple solution-processed CuOX as anode buffer layer for efficient organic solar cells

    International Nuclear Information System (INIS)

    Shen, Wenfei; Yang, Chunpeng; Bao, Xichang; Sun, Liang; Wang, Ning; Tang, Jianguo; Chen, Weichao; Yang, Renqiang

    2015-01-01

    Graphical abstract: - Highlights: • Simple solution-processed CuO X hole transport layer for efficient organic solar cell. • Good photovoltaic performances as hole transport layer in OSCs with P3HT and PBDTTT-C as donor materials. • The device with CuO X as hole transport layer shows great improved stability compared with that of device with PEDOT:PSS as hole transport layer. - Abstract: A simple, solution-processed ultrathin CuO X anode buffer layer was fabricated for high performance organic solar cells (OSCs). XPS measurement demonstrated that the CuO X was the composite of CuO and Cu 2 O. The CuO X modified ITO glass exhibit a better surface contact with the active layer. The photovoltaic performance of the devices with CuO X layer was optimized by varying the thickness of CuO X films through changing solution concentration. With P3HT:PC 61 BM as the active layer, we demonstrated an enhanced PCE of 4.14% with CuO X anode buffer layer, compared with that of PEDOT:PSS layer. The CuO X layer also exhibits efficient photovoltaic performance in devices with PBDTTT-C:PC 71 BM as the active layer. The long-term stability of CuO X device is better than that of PEDOT:PSS device. The results indicate that the easy solution-processed CuO X film can act as an efficient anode buffer layer for high-efficiency OSCs

  18. Ambient Layer-by-Layer ZnO Assembly for Highly Efficient Polymer Bulk Heterojunction Solar Cells

    KAUST Repository

    Eita, Mohamed Samir; El Labban, Abdulrahman; Cruciani, Federico; Usman, Anwar; Beaujuge, Pierre; Mohammed, Omar F.

    2015-01-01

    The use of metal oxide interlayers in polymer solar cells has great potential because metal oxides are abundant, thermally stable, and can be used in fl exible devices. Here, a layer-by-layer (LbL) protocol is reported as a facile, room

  19. Natural melanin composites by layer-by-layer assembly

    Science.gov (United States)

    Eom, Taesik; Shim, Bong Sub

    2015-04-01

    Melanin is an electrically conductive and biocompatible material, because their conjugated backbone structures provide conducting pathways from human skin, eyes, brain, and beyond. So there is a potential of using as materials for the neural interfaces and the implantable devices. Extracted from Sepia officinalis ink, our natural melanin was uniformly dispersed in mostly polar solvents such as water and alcohols. Then, the dispersed melanin was further fabricated to nano-thin layered composites by the layer-by-layer (LBL) assembly technique. Combined with polyvinyl alcohol (PVA), the melanin nanoparticles behave as an LBL counterpart to from finely tuned nanostructured films. The LBL process can adjust the smart performances of the composites by varying the layering conditions and sandwich thickness. We further demonstrated the melanin loading degree of stacked layers, combination nanostructures, electrical properties, and biocompatibility of the resulting composites by UV-vis spectrophotometer, scanning electron microscope (SEM), multimeter, and in-vitro cell test of PC12, respectively.

  20. Electronic equipment and radioisotope devices developed in the Institute of Physics and Nuclear Techniques in the years 1975-1983

    International Nuclear Information System (INIS)

    1983-01-01

    A short review of 43 devices developed in the Institute of Physics and Nuclear Techniques of Academy of Mining and Metallurgy in the years 1975-1983 is given. 20 radioisotope arrangements, 14 electronic devices, 7 detectors for gas chromatography and X-ray detection as well as 2 arrangements for sample preparation are presented. (author)

  1. Single-layer graphene on silicon nitride micromembrane resonators

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja [Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345 East, 2800 Kongens Lyngby (Denmark); Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S. [QUANTOP, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Taylor, Jacob M. [Joint Quantum Institute/NIST, College Park, Maryland 20899 (United States); Herring, Patrick K.; Cassidy, Maja C. [School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138 (United States); Marcus, Charles M. [Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Cheol Shin, Yong; Kong, Jing [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-02-07

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

  2. Heterojunction PbS Nanocrystal Solar Cells with Oxide Charge-Transport Layers

    KAUST Repository

    Hyun, Byung-Ryool

    2013-12-23

    Oxides are commonly employed as electron-transport layers in optoelectronic devices based on semiconductor nanocrystals, but are relatively rare as hole-transport layers. We report studies of NiO hole-transport layers in PbS nanocrystal photovoltaic structures. Transient fluorescence experiments are used to verify the relevant energy levels for hole transfer. On the basis of these results, planar heterojunction devices with ZnO as the photoanode and NiO as the photocathode were fabricated and characterized. Solution-processed devices were used to systematically study the dependence on nanocrystal size and achieve conversion efficiency as high as 2.5%. Optical modeling indicates that optimum performance should be obtained with thinner oxide layers than can be produced reliably by solution casting. Roomerature sputtering allows deposition of oxide layers as thin as 10 nm, which enables optimization of device performance with respect to the thickness of the charge-transport layers. The best devices achieve an open-circuit voltage of 0.72 V and efficiency of 5.3% while eliminating most organic material from the structure and being compatible with tandem structures. © 2013 American Chemical Society.

  3. Design considerations and philosophy of a device-independent publications/graphics system

    International Nuclear Information System (INIS)

    Burt, J.S.

    1978-01-01

    Over a period of ten years the National Nuclear Data Center has implemented graphics systems to meet a broad range of user requirements in the areas of interactive graphics, publications, and, to a lesser extent, text-editing, graphical data interpretations, and on-line data evaluation. The systems have been designed to support varying levels of user sophistication with respect to programing ability and user knowledge of the hardware involved. An overview is presented of the NNDC's graphics system which is available to the user via a higher-level language, FORTRAN. The system was designed with layers of software between the user and the device-dependent code. One layer is dedicated to processing the incompatibilities and inconsistencies between such devices as paper plotter, interactive graphics, and FR-80 microfilm/microfiche hardware. Another handles the niceties necessary for finer-quality publications work, e.g., superscripting, subscripting, boldface, variable character/page sizing, rotation, the use of multiple character sets (e.g., mathematical, Greek, physics) as well as features to allow the user to design special characters. 12 figures

  4. PropBase Query Layer: a single portal to UK subsurface physical property databases

    Science.gov (United States)

    Kingdon, Andrew; Nayembil, Martin L.; Richardson, Anne E.; Smith, A. Graham

    2013-04-01

    Until recently, the delivery of geological information for industry and public was achieved by geological mapping. Now pervasively available computers mean that 3D geological models can deliver realistic representations of the geometric location of geological units, represented as shells or volumes. The next phase of this process is to populate these with physical properties data that describe subsurface heterogeneity and its associated uncertainty. Achieving this requires capture and serving of physical, hydrological and other property information from diverse sources to populate these models. The British Geological Survey (BGS) holds large volumes of subsurface property data, derived both from their own research data collection and also other, often commercially derived data sources. This can be voxelated to incorporate this data into the models to demonstrate property variation within the subsurface geometry. All property data held by BGS has for many years been stored in relational databases to ensure their long-term continuity. However these have, by necessity, complex structures; each database contains positional reference data and model information, and also metadata such as sample identification information and attributes that define the source and processing. Whilst this is critical to assessing these analyses, it also hugely complicates the understanding of variability of the property under assessment and requires multiple queries to study related datasets making extracting physical properties from these databases difficult. Therefore the PropBase Query Layer has been created to allow simplified aggregation and extraction of all related data and its presentation of complex data in simple, mostly denormalized, tables which combine information from multiple databases into a single system. The structure from each relational database is denormalized in a generalised structure, so that each dataset can be viewed together in a common format using a simple

  5. A physics-based model for maintenance of the pH gradient in the gastric mucus layer.

    Science.gov (United States)

    Lewis, Owen L; Keener, James P; Fogelson, Aaron L

    2017-12-01

    It is generally accepted that the gastric mucus layer provides a protective barrier between the lumen and the mucosa, shielding the mucosa from acid and digestive enzymes and preventing autodigestion of the stomach epithelium. However, the precise mechanisms that contribute to this protective function are still up for debate. In particular, it is not clear what physical processes are responsible for transporting hydrogen protons, secreted within the gastric pits, across the mucus layer to the lumen without acidifying the environment adjacent to the epithelium. One hypothesis is that hydrogen may be bound to the mucin polymers themselves as they are convected away from the mucosal surface and eventually degraded in the stomach lumen. It is also not clear what mechanisms prevent hydrogen from diffusing back toward the mucosal surface, thereby lowering the local pH. In this work we investigate a physics-based model of ion transport within the mucosal layer based on a Nernst-Planck-like equation. Analysis of this model shows that the mechanism of transporting protons bound to the mucus gel is capable of reproducing the trans-mucus pH gradients reported in the literature. Furthermore, when coupled with ion exchange at the epithelial surface, our analysis shows that bicarbonate secretion alone is capable of neutralizing the epithelial pH, even in the face of enormous diffusive gradients of hydrogen. Maintenance of the pH gradient is found to be robust to a wide array of perturbations in both physiological and phenomenological model parameters, suggesting a robust physiological control mechanism. NEW & NOTEWORTHY This work combines modeling techniques based on physical principles, as well as novel numerical simulations to test the plausibility of one hypothesized mechanism for proton transport across the gastric mucus layer. Results show that this mechanism is able to maintain the extreme pH gradient seen in in vivo experiments and suggests a highly robust regulation

  6. Rapid visible color change and physical swelling during water exposure in triethanolamine-metalcone films formed by molecular layer deposition

    International Nuclear Information System (INIS)

    Lemaire, Paul C.; Oldham, Christopher J.; Parsons, Gregory N.

    2016-01-01

    Molecular layer deposition (MLD) of “metalcones,” including alucone, zincone, titanicone, and others, involves self-limiting half-reactions between organic and organometallic (or metal-halide) reactants. Studies have typically focused on metal precursors reacting with ethylene glycol or glycerol to form the films' polymeric O-M-O-(CH x ) y -O-M-O repeat units. The authors report new MLD materials that incorporate tertiary amine groups into the organic linkage. Specifically, reacting triethanolamine (TEA) with either trimethylaluminum or titanium tetrachloride produces TEA-alucone (Al-TEA) and TEA-titanicone (Ti-TEA), respectively, and the amine group leads to unique physical and optical properties. Fourier-transform infrared (FTIR) analysis confirms that the films have prominent C-H, C-N, and M-O-C peaks, consistent with the expected bond structure. When exposed to vapors, including water, alcohol, or ammonia, the Ti-TEA films changed their visible color within minutes and increased physical thickness by >35%. The Al-TEA showed significantly less response. X-ray photoelectron spectroscopy and FTIR suggest that HCl generated during MLD coordinates to the amine forming a quaternary ammonium salt that readily binds adsorbates via hydrogen bonding. The visible color change is reversible, and ellipsometry confirms that the color change results from vapor absorption. The unique absorptive and color-changing properties of the TEA-metalcone films point to new possible applications for MLD materials in filtration, chemical absorption, and multifunctional chemical separations/sensing device systems

  7. Rapid visible color change and physical swelling during water exposure in triethanolamine-metalcone films formed by molecular layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lemaire, Paul C.; Oldham, Christopher J.; Parsons, Gregory N., E-mail: gnp@ncsu.edu [Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2016-01-15

    Molecular layer deposition (MLD) of “metalcones,” including alucone, zincone, titanicone, and others, involves self-limiting half-reactions between organic and organometallic (or metal-halide) reactants. Studies have typically focused on metal precursors reacting with ethylene glycol or glycerol to form the films' polymeric O-M-O-(CH{sub x}){sub y}-O-M-O repeat units. The authors report new MLD materials that incorporate tertiary amine groups into the organic linkage. Specifically, reacting triethanolamine (TEA) with either trimethylaluminum or titanium tetrachloride produces TEA-alucone (Al-TEA) and TEA-titanicone (Ti-TEA), respectively, and the amine group leads to unique physical and optical properties. Fourier-transform infrared (FTIR) analysis confirms that the films have prominent C-H, C-N, and M-O-C peaks, consistent with the expected bond structure. When exposed to vapors, including water, alcohol, or ammonia, the Ti-TEA films changed their visible color within minutes and increased physical thickness by >35%. The Al-TEA showed significantly less response. X-ray photoelectron spectroscopy and FTIR suggest that HCl generated during MLD coordinates to the amine forming a quaternary ammonium salt that readily binds adsorbates via hydrogen bonding. The visible color change is reversible, and ellipsometry confirms that the color change results from vapor absorption. The unique absorptive and color-changing properties of the TEA-metalcone films point to new possible applications for MLD materials in filtration, chemical absorption, and multifunctional chemical separations/sensing device systems.

  8. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    International Nuclear Information System (INIS)

    Bolat, Sami; Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-01

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N 2 /H 2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH 3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N 2 :H 2 ambient

  9. A bio-enabled maximally mild layer-by-layer Kapton surface modification approach for the fabrication of all-inkjet-printed flexible electronic devices

    Science.gov (United States)

    Fang, Yunnan; Hester, Jimmy G. D.; Su, Wenjing; Chow, Justin H.; Sitaraman, Suresh K.; Tentzeris, Manos M.

    2016-12-01

    A bio-enabled, environmentally-friendly, and maximally mild layer-by-layer approach has been developed to surface modify inherently hydrophobic Kapton HN substrates to allow for great printability of both water- and organic solvent-based inks thus facilitating the full-inkjet-printing of flexible electronic devices. Different from the traditional Kapton surface modification approaches which are structure-compromising and use harsh conditions to target, and oxidize and/or remove part of, the surface polyimide of Kapton, the present Kapton surface modification approach targeted the surface electric charges borne by its additive particles, and was not only the first to utilize environmentally-friendly clinical biomolecules to build up a thin film of protamine-heparin complex on Kapton, but also the first to be conducted under minimally destructive and maximally mild conditions. Besides, for electrically charged ink particles, the present surface modification method can enhance the uniformity of the inkjet-printed films by reducing the “coffee ring effect”. As a proof-of-concept demonstration, reduced graphene oxide-based gas sensors, which were flexible, ultra-lightweight, and miniature-sized, were fully-inkjet-printed on surface modified Kapton HN films and tested for their sensitivity to dimethyl methylphosphonate (a nerve agent simulant). Such fabricated sensors survived a Scotch-tape peel test and were found insensitive to repeated bending to a small 0.5 cm radius.

  10. The Setup Design for Selective Laser Sintering of High-Temperature Polymer Materials with the Alignment Control System of Layer Deposition

    Directory of Open Access Journals (Sweden)

    Alexey Nazarov

    2018-03-01

    Full Text Available This paper presents the design of an additive setup for the selective laser sintering (SLS of high-temperature polymeric materials, which is distinguished by an original control system for aligning the device for depositing layers of polyether ether ketone (PEEK powder. The kinematic and laser-optical schemes are given. The main cooling circuits are described. The proposed technical and design solutions enable conducting the SLS process in different types of high-temperature polymer powders. The principles of the device adjustment for depositing powder layers based on an integral thermal analysis are disclosed. The PEEK sinterability was shown on the designed installation. The physic-mechanical properties of the tested 3D parts were evaluated in comparison with the known data and showed an acceptable quality.

  11. Layer-by-layer films for biomedical applications

    CERN Document Server

    Picart, Catherine; Voegel, Jean-Claude

    2015-01-01

    The layer-by-layer (LbL) deposition technique is a versatile approach for preparing nanoscale multimaterial films: the fabrication of multicomposite films by the LbL procedure allows the combination of literally hundreds of different materials with nanometer thickness in a single device to obtain novel or superior performance. In the last 15 years the LbL technique has seen considerable developments and has now reached a point where it is beginning to find applications in bioengineering and biomedical engineering. The book gives a thorough overview of applications of the LbL technique in the c

  12. Application of the device based on chirping of optical impulses for management of software-defined networks in dynamic mode

    Science.gov (United States)

    Vinogradova, Irina L.; Khasansin, Vadim R.; Andrianova, Anna V.; Yantilina, Liliya Z.; Vinogradov, Sergey L.

    2016-03-01

    The analysis of the influence of the physical layer concepts in optical networks on the performance of the whole network. It is concluded that the relevance of the search for new means of transmitting information on a physical level. It is proposed to use an optical chirp overhead transmission between controllers SDN. This article is devoted to research of a creation opportunity of optical neural switchboards controlled in addition by submitted optical radiation. It is supposed, that the managing radiation changes a parameter of refraction of optical environment of the device, and with it and length of a wave of information radiation. For the control by last is used multibeam interferometer. The brief estimation of technical aspects of construction of the device is carried out. The principle of using the device to an extensive network. Simulation of network performance parameters.

  13. Physical characteristics modification of a SiGe-HBT semiconductor device for performance improvement in a terahertz detecting system

    Science.gov (United States)

    Ghodsi, Hamed; Kaatuzian, Hassan

    2015-05-01

    In order to improve the performance of a pre-designed direct conversion terahertz detector which is implemented in a 0.25 μm-SiGe-BiCMOS process, we propose some slight modifications in the bipolar section of the SiGe device physical design. Comparison of our new proposed device and the previously reported device is done by SILVACO TCAD software simulation and we have used previous experimentally reported data to confirm our software simulations. Our proposed modifications in device structural design show a present device responsivity improvement of about 10% from 1 to 1.1 A/W while the bandwidth improvement is about 218 GHz. The minimum noise equivalent power at detector output is increased by about 14.3% and finally power consumption per pixel at the maximum responsivity is decreased by about 5%.

  14. Design and implementation of a software defined HiperLAN/2 physical layer model for simulation purposes

    NARCIS (Netherlands)

    van Hoesel, L.F.W.

    2002-01-01

    In this Master of Science thesis a simulation model of the HiperLAN/2 physical layer is designed and implemented. The model should provide insight in the demodulation functions that are necessary in HiperLAN/2 and it should be useful for determining channel selection and computational requirements

  15. Layer-by-layer deposition of nanostructured CsPbBr3 perovskite thin films

    Science.gov (United States)

    Reshetnikova, A. A.; Matyushkin, L. B.; Andronov, A. A.; Sokolov, V. S.; Aleksandrova, O. A.; Moshnikov, V. A.

    2017-11-01

    Layer-by-layer deposition of nanostructured perovskites cesium lead halide thin films is described. The method of deposition is based on alternate immersion of the substrate in the precursor solutions or colloidal solution of nanocrystals and methyl acetate/lead nitrate solution using the device for deposition of films by SILAR and dip-coating techniques. An example of obtaining a photosensitive structure based on nanostructures of ZnO nanowires and layers of CsBbBr3 nanocrystals is also shown.

  16. An open-source, programmable pneumatic setup for operation and automated control of single- and multi-layer microfluidic devices

    Directory of Open Access Journals (Sweden)

    Kara Brower

    2018-04-01

    Full Text Available Microfluidic technologies have been used across diverse disciplines (e.g. high-throughput biological measurement, fluid physics, laboratory fluid manipulation but widespread adoption has been limited in part due to the lack of openly disseminated resources that enable non-specialist labs to make and operate their own devices. Here, we report the open-source build of a pneumatic setup capable of operating both single and multilayer (Quake-style microfluidic devices with programmable scripting automation. This setup can operate both simple and complex devices with 48 device valve control inputs and 18 sample inputs, with modular design for easy expansion, at a fraction of the cost of similar commercial solutions. We present a detailed step-by-step guide to building the pneumatic instrumentation, as well as instructions for custom device operation using our software, Geppetto, through an easy-to-use GUI for live on-chip valve actuation and a scripting system for experiment automation. We show robust valve actuation with near real-time software feedback and demonstrate use of the setup for high-throughput biochemical measurements on-chip. This open-source setup will enable specialists and novices alike to run microfluidic devices easily in their own laboratories. Keywords: Microfluidics, Pneumatics, Laboratory automation, Biochip, BioMEMs, Biohacking, Fluid handling, Micro total analysis systems (μTAS, Quake-style valves

  17. Encapsulation methods for organic electrical devices

    Science.gov (United States)

    Blum, Yigal D.; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijian

    2013-06-18

    The disclosure provides methods and materials suitable for use as encapsulation barriers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device encapsulated by alternating layers of a silicon-containing bonding material and a ceramic material. The encapsulation methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  18. Passive safety device and internal short tested method for energy storage cells and systems

    Science.gov (United States)

    Keyser, Matthew; Darcy, Eric; Long, Dirk; Pesaran, Ahmad

    2015-09-22

    A passive safety device for an energy storage cell for positioning between two electrically conductive layers of the energy storage cell. The safety device also comprising a separator and a non-conductive layer. A first electrically conductive material is provided on the non-conductive layer. A first opening is formed through the separator between the first electrically conductive material and one of the electrically conductive layers of the energy storage device. A second electrically conductive material is provided adjacent the first electrically conductive material on the non-conductive layer, wherein a space is formed on the non-conductive layer between the first and second electrically conductive materials. A second opening is formed through the non-conductive layer between the second electrically conductive material and another of the electrically conductive layers of the energy storage device. The first and second electrically conductive materials combine and exit at least partially through the first and second openings to connect the two electrically conductive layers of the energy storage device at a predetermined temperature.

  19. Physical and Electrical Properties of SiO2 Layer Synthesized by Eco-Friendly Method

    Science.gov (United States)

    Kim, Jong-Woong; Kim, Young-Seok; Hong, Sung-Jei; Hong, Tae-Hwan; Han, Jeong-In

    2010-05-01

    SiO2 thin film has a wide range of applications, including insulation layers in microelectronic devices, such as semiconductors and flat panel displays, due to its advantageous characteristics. Herein, we developed a new eco-friendly method for manufacturing SiO2 nanoparticles and, thereby, SiO2 paste to be used in the digital printing process for the fabrication of SiO2 film. By excluding harmful Cl- and NO3- elements from the SiO2 nanoparticle synthetic process, we were able to lower the heat treatment temperature for the SiO2 precursor from 600 to 300 °C and the diameter of the final SiO2 nanoparticles to about 14 nm. The synthesized SiO2 nanoparticles were dispersed in an organic solvent with additives to make a SiO2 paste for feasibility testing. The SiO2 paste was printed onto a glass substrate to test the feasibility of using it for digital printing. The insulation resistance of the printed film was high enough for it to be used as an insulation layer for passivation.

  20. Mass-physical properties of surficial sediments on the Rhoˆne continental margin: implications for the nepheloid benthic layer

    Science.gov (United States)

    Chassefiere, Bernard

    1990-09-01

    Mass-physical properties of the surficial (upper 5 m) sediments on the Gulf of Lions continental margin were analysed, from more than 100 short (1 m) and longer (5 m) cores obtained during several cruises. Data include water content, unit weight, Atterberg limits (liquid limit, plastic limit, plasticity index), shear strength and compression index, and are used to determine: first, the mass property distribution, according to the main parameters influencing mass-physical properties; the relationships between these properties and the nepheloid layer on the shelf. The shoreline (lagoons) and inner shelf are characterized by low density and shear strength and high water content deposits, due to electrochemical flocculation of the sediment. The outer shelf is blanketed by higher density and shear strength and lower water content deposits generated by normal settling of suspended particles. On the inner shelf, during river peak discharges, a short-term thin bottom layer of "yogurt-like" [ FASS (1985) Geomarine Letters, 4, 147-152; FASS (1986) Continental Shelf Research, 6, 189-208] fluid-mud (unit weight lower than 1.3 mg m -3) is supplied, by a bottom nepheloid layer. During stormy periods, this "yogurt-like" layer (about 10 cm thick) partly disappears by resuspension of suspended particulate matter; this is advected, in the bottom nepheloid layer, over the shelf and the canyons within the upper slope.

  1. Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

    International Nuclear Information System (INIS)

    Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

    2015-01-01

    Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

  2. Fabrication of graphene-based flexible devices utilizing a soft lithographic patterning method

    International Nuclear Information System (INIS)

    Wook Jung, Min; Myung, Sung; Woong Kim, Ki; Song, Wooseok; Suk Lee, Sun; Lim, Jongsun; An, Ki-Seok; Jo, You-Young; Park, Chong-Yun

    2014-01-01

    There has been considerable interest in soft lithographic patterning processing of large scale graphene sheets due to the low cost and simplicity of the patterning process along with the exceptional electrical or physical properties of graphene. These properties include an extremely high carrier mobility and excellent mechanical strength. Recently, a study has reported that single layer graphene grown via chemical vapor deposition (CVD) was patterned and transferred to a target surface by controlling the surface energy of the polydimethylsiloxane (PDMS) stamp. However, applications are limited because of the challenge of CVD-graphene functionalization for devices such as chemical or bio-sensors. In addition, graphene-based layers patterned with a micron scale width on the surface of biocompatible silk fibroin thin films, which are not suitable for conventional CMOS processes such as the patterning or etching of substrates, have yet to be reported. Herein, we developed a soft lithographic patterning process via surface energy modification for advanced graphene-based flexible devices such as transistors or chemical sensors. Using this approach, the surface of a relief-patterned elastomeric stamp was functionalized with hydrophilic dimethylsulfoxide molecules to enhance the surface energy of the stamp and to remove the graphene-based layer from the initial substrate and transfer it to a target surface. As a proof of concept using this soft lithographic patterning technique, we demonstrated a simple and efficient chemical sensor consisting of reduced graphene oxide and a metallic nanoparticle composite. A flexible graphene-based device on a biocompatible silk fibroin substrate, which is attachable to an arbitrary target surface, was also successfully fabricated. Briefly, a soft lithographic patterning process via surface energy modification was developed for advanced graphene-based flexible devices such as transistors or chemical sensors and attachable devices on a

  3. Fabrication of graphene-based flexible devices utilizing a soft lithographic patterning method

    Science.gov (United States)

    Jung, Min Wook; Myung, Sung; Kim, Ki Woong; Song, Wooseok; Jo, You-Young; Lee, Sun Suk; Lim, Jongsun; Park, Chong-Yun; An, Ki-Seok

    2014-07-01

    There has been considerable interest in soft lithographic patterning processing of large scale graphene sheets due to the low cost and simplicity of the patterning process along with the exceptional electrical or physical properties of graphene. These properties include an extremely high carrier mobility and excellent mechanical strength. Recently, a study has reported that single layer graphene grown via chemical vapor deposition (CVD) was patterned and transferred to a target surface by controlling the surface energy of the polydimethylsiloxane (PDMS) stamp. However, applications are limited because of the challenge of CVD-graphene functionalization for devices such as chemical or bio-sensors. In addition, graphene-based layers patterned with a micron scale width on the surface of biocompatible silk fibroin thin films, which are not suitable for conventional CMOS processes such as the patterning or etching of substrates, have yet to be reported. Herein, we developed a soft lithographic patterning process via surface energy modification for advanced graphene-based flexible devices such as transistors or chemical sensors. Using this approach, the surface of a relief-patterned elastomeric stamp was functionalized with hydrophilic dimethylsulfoxide molecules to enhance the surface energy of the stamp and to remove the graphene-based layer from the initial substrate and transfer it to a target surface. As a proof of concept using this soft lithographic patterning technique, we demonstrated a simple and efficient chemical sensor consisting of reduced graphene oxide and a metallic nanoparticle composite. A flexible graphene-based device on a biocompatible silk fibroin substrate, which is attachable to an arbitrary target surface, was also successfully fabricated. Briefly, a soft lithographic patterning process via surface energy modification was developed for advanced graphene-based flexible devices such as transistors or chemical sensors and attachable devices on a

  4. A novel pulsed drug-delivery system: polyelectrolyte layer-by-layer coating of chitosan–alginate microgels

    Directory of Open Access Journals (Sweden)

    Zhou GC

    2013-02-01

    Full Text Available Guichen Zhou,1,2,* Ying Lu,1,* He Zhang,1,* Yan Chen,1 Yuan Yu,1 Jing Gao,1 Duxin Sun,3 Guoqing Zhang,2 Hao Zou,1 Yanqiang Zhong1 1Department of Pharmaceutical Science, Second Military Medical University, Shanghai, People's Republic of China; 2Department of Pharmacy, East Hospital of Hepatobiliary Surgery, Shanghai, People's Republic of China; 3Department of Pharmaceutical Sciences, University of Michigan, Ann Arbor, MI, USA*These authors contributed equally to this workPurpose: The aim of this report was to introduce a novel “core-membrane” microgel drug-delivery device for spontaneously pulsed release without any external trigger.Methods: The microgel core was prepared with alginate and chitosan. The semipermeable membrane outside the microgel was made of polyelectrolytes including polycation poly(allylamine hydrochloride and sodium polystyrene sulfonate. The drug release of this novel system was governed by the swelling pressure of the core and the rupture of the outer membrane.Results: The size of the core-membrane microgel drug-delivery device was 452.90 ± 2.71 µm. The surface charge depended on the layer-by-layer coating of polyelectrolytes, with zeta potential of 38.6 ± 1.4 mV. The confocal microscope exhibited the layer-by-layer outer membrane and inner core. The in vitro release profile showed that the content release remained low during the first 2.67 hours. After this lag time, the cumulative release increased to 80% in the next 0.95 hours, which suggested a pulsed drug release. The in vivo drug release in mice showed that the outer membrane was ruptured at approximately 3 to 4 hours, as drug was explosively released.Conclusion: These data suggest that the encapsulated substance in the core-membrane microgel delivery device can achieve a massive drug release after outer membrane rupture. This device was an effective system for pulsed drug delivery.Keywords: polyelectrolyte, chitosan–alginate, microgels, layer-by-layer, pulsed

  5. Si/SiC heterojunction optically controlled transistor with charge compensation layer

    Directory of Open Access Journals (Sweden)

    Pu Hongbin

    2016-01-01

    Full Text Available A novel n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has been studied in the paper. The performance of the device is simulated using Silvaco Atlas tools, which indicates excellent performances of the device in both blocking state and conducting state. The device also has a good switching characteristic with 0.54μs as rising time and 0.66μs as falling time. With the charge compensation layer, the breakdown voltage and the spectral response intensity of the device are improved by 90V and 33A/W respectively. Compared with optically controlled transistor without charge compensation layer, the n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has a better performance.

  6. Unconventional device concepts for polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Veenstra, S.C.; Slooff, L.H.; Verhees, W.J.H.; Cobussen-Pool, E.M.; Lenzmann, F.O.; Kroon, J.M. [ECN Solar Energy, Petten (Netherlands); Sessolo, M.; Bolink, H.J. [Instituto de Ciencia Molecular, Universidad de Valencia, Valencia (Spain)

    2009-09-15

    The inclusion of metal-oxide layers in polymer solar cells enables the fabrication of a series of unconventional device architectures. These devices include: semi-transparent polymer solar cells, devices with inverted polarity, as well as devices with air stable electrodes. A proof-of-principle of these devices is presented. The anticipated benefits of these novel device structures over conventional polymer solar cells are discussed.

  7. Surface Passivation by Quantum Exclusion Using Multiple Layers

    Science.gov (United States)

    Hoenk, Michael E. (Inventor)

    2015-01-01

    A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1.times.10.sup.14 cm.sup.-2, and locally exceeding 10.sup.22 per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices.

  8. Using physical and numerical models to study possibilities of storing natural gas in horizontal layers

    Energy Technology Data Exchange (ETDEWEB)

    Boucher, M; Marrast, j

    1969-11-01

    The absence of suitable structures in some regions has led Gaz de France to investigate the storage of natural gas in horizontal layers. Research aimed at completing work done in this field by Soviet researchers has been carried out at the Institut Francais du Petrole using physical and numerical models together with computing. This research included an examination of storage stability, of how the effective volume of gas evolved during different cycles, of how the gas bubble migrates under the effect of a slight dip, and of the influence of instabilities. The possibility of storing gas in horizontal or sub-horizontal layers was thus justified from a theoretical viewpoint. When the time comes to make a decision concerning the creation of such a storage area, it is the economic factor that will be preponderant. The effective volume of recoverable gas has turned out to depend to a large extent on the thickness of the layer. (12 refs.)

  9. Layered double hydroxide materials coated carbon electrode: New challenge to future electrochemical power devices

    International Nuclear Information System (INIS)

    Djebbi, Mohamed Amine; Braiek, Mohamed; Namour, Philippe; Ben Haj Amara, Abdesslem; Jaffrezic-Renault, Nicole

    2016-01-01

    , MgAl LDH shows better performance than ZnAl LDH, due to the presence of magnesium cations in the layers. Following the structural, morphological and electrochemical behavior studies of both synthesized LDHs, the prepared LDH modified electrodes were tested through microbial fuel cell configuration, revealing a remarkable, potential new pathway for high-performance and cost-effective electrode use in electrochemical power devices.

  10. Layered double hydroxide materials coated carbon electrode: New challenge to future electrochemical power devices

    Energy Technology Data Exchange (ETDEWEB)

    Djebbi, Mohamed Amine, E-mail: mohamed.djebbi@etu.univ-lyon1.fr [Institut des Sciences Analytiques UMR CNRS 5280, Université Claude Bernard-Lyon 1, 5 rue de la Doua, 69100 Villeurbanne (France); Laboratoire de Physique des Matériaux Lamellaires et Nano-Matériaux Hybrides, Faculté des Sciences de Bizerte, Université de Carthage, 7021 Bizerte (Tunisia); Braiek, Mohamed [Institut des Sciences Analytiques UMR CNRS 5280, Université Claude Bernard-Lyon 1, 5 rue de la Doua, 69100 Villeurbanne (France); Namour, Philippe [Institut des Sciences Analytiques UMR CNRS 5280, Université Claude Bernard-Lyon 1, 5 rue de la Doua, 69100 Villeurbanne (France); Irstea, 5 rue de la Doua, 69100 Villeurbanne (France); Ben Haj Amara, Abdesslem [Laboratoire de Physique des Matériaux Lamellaires et Nano-Matériaux Hybrides, Faculté des Sciences de Bizerte, Université de Carthage, 7021 Bizerte (Tunisia); Jaffrezic-Renault, Nicole [Institut des Sciences Analytiques UMR CNRS 5280, Université Claude Bernard-Lyon 1, 5 rue de la Doua, 69100 Villeurbanne (France)

    2016-11-15

    , MgAl LDH shows better performance than ZnAl LDH, due to the presence of magnesium cations in the layers. Following the structural, morphological and electrochemical behavior studies of both synthesized LDHs, the prepared LDH modified electrodes were tested through microbial fuel cell configuration, revealing a remarkable, potential new pathway for high-performance and cost-effective electrode use in electrochemical power devices.

  11. Electronic structure, magnetism and thermoelectricity in layered perovskites: Sr2SnMnO6 and Sr2SnFeO6

    Science.gov (United States)

    Khandy, Shakeel Ahmad; Gupta, Dinesh C.

    2017-11-01

    Layered structures especially perovskites have titanic potential for novel device applications and thanks to the multifunctional properties displayed in these materials. We forecast and justify the robust spin-polarized ferromagnetism in half-metallic Sr2SnFeO6 and semiconducting Sr2SnMnO6 perovskite oxides. Different approximation methods have been argued to put forward their physical properties. The intriguingly intricate electronic band structures favor the application of these materials in spintronics. The transport parameters like Seebeck coefficient, electrical and thermal conductivity, have been put together to establish their thermoelectric response. Finally, the layered oxides are found to switch their application as thermoelectric materials and hence, these concepts design the principles of the technologically desired thermoelectric and spin based devices.

  12. Physical masking process for integrating micro metallic structures on polymer substrate

    DEFF Research Database (Denmark)

    Islam, Mohammad Aminul; Hansen, Hans Nørgaard

    2009-01-01

    plasmon devices need micro metallic structures on a polymer substrate with an uniform metal layer thickness in the nanometer range. A well known fabrication process to achieve such metallic surface pattern on polymer substrate is photolithography which involves an expensive mask and toxic chemicals......Integration of micro metallic structures in polymer devices is a broad multi-disciplinary research field, consisting of various combinations of mechanical, chemical and physical fabrication methods. Each of the methods has its specific advantages and disadvantages. Some applications like surface....... The current study shows a novel approach for fabricating thin micro metallic structures on polymer substrates using a simple physical mask and a PVD equipment. The new process involves fewer process steps, it is cost effective and suitable for high volume industrial production. Current study suggests...

  13. Structural properties of In2Se3 precursor layers deposited by spray pyrolysis and physical vapor deposition for CuInSe2 thin-film solar cell applications

    International Nuclear Information System (INIS)

    Reyes-Figueroa, P.; Painchaud, T.; Lepetit, T.; Harel, S.; Arzel, L.; Yi, Junsin; Barreau, N.; Velumani, S.

    2015-01-01

    The structural properties of In 2 Se 3 precursor thin films grown by chemical spray pyrolysis (CSP) and physical vapor deposition (PVD) methods were compared. This is to investigate the feasibility to substitute PVD process of CuInSe 2 (CISe) films by CSP films as precursor layer, thus decreasing the production cost by increasing material-utilization efficiency. Both films of 1 μm thickness were deposited at the same substrate temperature of 380 °C. X-ray diffraction and Raman spectra confirm the formation of γ-In 2 Se 3 crystalline phase for both films. The PVD and CSP films exhibited (110) and (006) preferred orientations, respectively. The PVD films showed a smaller full width at half maximum value (0.09°) compared with CSP layers (0.1°). Films with the same crystalline phase but with different orientations are normally used in the preparation of high quality CISe films by 3-stage process. Scanning electron microscope cross-section images showed an important difference in grain size with well-defined larger grains of size 1–2 μm in the PVD films as compared to CSP layers (600 nm). Another important characteristic that differentiates the two precursor films is the oxygen contamination. X-ray photoelectron spectroscopy showed the presence of oxygen in CSP films. The oxygen atoms could be bonded to indium by replacing Se vacancies, which are formed during CSP deposition. Taking account of the obtained results, such CSP films can be used as precursor layer in a PVD process in order to produce CISe absorber films. - Highlights: • To find the intricacies involved in spray pyrolysis (CSP) and physical vapor (PVD) deposition. • Comparison of CSP and PVD film formations — especially in structural properties. • Feasibility to substitute CSP (cheaper) films for PVD in the manufacturing process. • Decreasing the global production cost of Cu(In,Ga)Se 2 devices in the 3-stage process

  14. Electron injection mechanisms of green organic light-emitting devices fabricated utilizing a double electron injection layer consisting of cesium carbonate and fullerene

    International Nuclear Information System (INIS)

    Yang, J.S.; Choo, D.C.; Kim, T.W.; Jin, Y.Y.; Seo, J.H.; Kim, Y.K.

    2010-01-01

    Electron injection mechanisms of the luminance efficiency of green organic light-emitting devices (OLEDs) fabricated utilizing a cesium carbonate (Cs 2 CO 3 )/fullerene (C 60 ) heterostructure acting as an electron injection layer (EIL) were investigated. Current density-voltage and luminance-voltage measurements showed that the current densities and the luminances of the OLEDs with a Cs 2 CO 3 or Cs 2 CO 3 /C 60 EIL were higher than that of the OLEDs with a Liq EIL. The luminance efficiency of the OLEDs with a Cs 2 CO 3 EIL was almost three times higher than that of the OLEDs with a Liq EIL. Because the electron injection efficiency of the Cs 2 CO 3 layer in OLEDs was different from that of the C 60 layer, the luminance efficiency of the OLEDs with a double EIL consisting of a Cs 2 CO 3 layer and a C 60 layer was smaller than that of the OLEDs with a Cs 2 CO 3 EIL. The electron injection mechanisms of OLEDs with a Cs 2 CO 3 and C 60 double EIL are described on the basis of the experimental results.

  15. TiO2 nanofiber solid-state dye sensitized solar cells with thin TiO2 hole blocking layer prepared by atomic layer deposition

    International Nuclear Information System (INIS)

    Li, Jinwei; Chen, Xi; Xu, Weihe; Nam, Chang-Yong; Shi, Yong

    2013-01-01

    We incorporated a thin but structurally dense TiO 2 layer prepared by atomic layer deposition (ALD) as an efficient hole blocking layer in the TiO 2 nanofiber based solid-state dye sensitized solar cell (ss-DSSC). The nanofiber ss-DSSCs having ALD TiO 2 layers displayed increased open circuit voltage, short circuit current density, and power conversion efficiency compared to control devices with blocking layers prepared by spin-coating liquid TiO 2 precursor. We attribute the improved photovoltaic device performance to the structural integrity of ALD-coated TiO 2 layer and consequently enhanced hole blocking effect that results in reduced dark leakage current and increased charge carrier lifetime. - Highlights: • TiO 2 blocking locking layer prepared by atomic layer deposition (ALD) method. • ALD-coated TiO 2 layer enhanced hole blocking effect. • ALD blocking layer improved the voltage, current and efficiency. • ALD blocking layer reduced dark leakage current and increased electron lifetime

  16. Enhancing or suppressing the spin Hall effect of light in layered nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Luo Hailu; Ling Xiaohui; Zhou Xinxing; Shu Weixing; Wen Shuangchun; Fan Dianyuan [Key Laboratory for Micro/Nano Opto-Electronic Devices of Ministry of Education, College of Information Science and Engineering, Hunan University, Changsha 410082 (China)

    2011-09-15

    The spin Hall effect (SHE) of light in layered nanostructures is investigated theoretically in this paper. A general propagation model describing the spin-dependent transverse splitting of wave packets in the SHE of light is established from the viewpoint of classical electrodynamics. We show that the transverse displacement of the wave-packet centroid can be tuned to either a negative or a positive value, or even zero, by just adjusting the structure parameters, suggesting that the SHE of light in layered nanostructures can be enhanced or suppressed in a desired way. The inherent physics behind this interesting phenomenon is attributed to the optical Fabry-Perot resonance. We believe that these findings will open the possibility for developing new nanophotonic devices.

  17. Trap effect of an ultrathin DCJTB layer in organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yuanmin [Institute of Optoelectronic Technology, Key Laboratory for Information Storage, Displays and Materials, Beijing Jiaotong University, Beijing 100044 (China); Teng Feng [Institute of Optoelectronic Technology, Key Laboratory for Information Storage, Displays and Materials, Beijing Jiaotong University, Beijing 100044 (China)]. E-mail: advanced9898@126.com; Xu Zheng [Institute of Optoelectronic Technology, Key Laboratory for Information Storage, Displays and Materials, Beijing Jiaotong University, Beijing 100044 (China); Hou Yanbing [Institute of Optoelectronic Technology, Key Laboratory for Information Storage, Displays and Materials, Beijing Jiaotong University, Beijing 100044 (China); Yang Shengyi [Institute of Optoelectronic Technology, Key Laboratory for Information Storage, Displays and Materials, Beijing Jiaotong University, Beijing 100044 (China); Xu Xurong [Institute of Optoelectronic Technology, Key Laboratory for Information Storage, Displays and Materials, Beijing Jiaotong University, Beijing 100044 (China)

    2005-08-15

    An improved performance of organic light-emitting diodes has been obtained by using 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4Hpyran (DCJTB) as an ultrathin emitting layer. When 0.1 nm DCJTB was inserted between the hole-transporting layer and electron-transporting layer, for an unoptimized device indium-tin oxide (ITO)/naphtylphenyliphenyl diamine (NPB)/DCJTB (0.1 nm)/8-hydroxyquinoline aluminum (Alq{sub 3})/Al, the maximum brightness was 1531 cd m{sup -2} at 15 V. Compared with doped devices ITO/NPB/Alq{sub 3}:DCJTB (1%)/Alq{sub 3}/LiF/Al, a higher efficiency has been achieved. Compared with the conventional device ITO/NPB/Alq{sub 3}/Al, the inserted device has a slightly higher current efficiency and lower turn-on voltage. We suggest the ultrathin DCJTB layer acts as trap for carriers, and the accumulated holes at the hole-transport layer/electron-transport layer interface have enhanced the electric field in the electron-transport layer and improved the electron injection at the cathode.

  18. Physical characteristics modification of a SiGe-HBT semiconductor device for performance improvement in a terahertz detecting system

    International Nuclear Information System (INIS)

    Ghodsi, Hamed; Kaatuzian, Hassan

    2015-01-01

    In order to improve the performance of a pre-designed direct conversion terahertz detector which is implemented in a 0.25 μm-SiGe-BiCMOS process, we propose some slight modifications in the bipolar section of the SiGe device physical design. Comparison of our new proposed device and the previously reported device is done by SILVACO TCAD software simulation and we have used previous experimentally reported data to confirm our software simulations. Our proposed modifications in device structural design show a present device responsivity improvement of about 10% from 1 to 1.1 A/W while the bandwidth improvement is about 218 GHz. The minimum noise equivalent power at detector output is increased by about 14.3% and finally power consumption per pixel at the maximum responsivity is decreased by about 5%. (paper)

  19. Organic photovoltaic cell incorporating electron conducting exciton blocking layers

    Science.gov (United States)

    Forrest, Stephen R.; Lassiter, Brian E.

    2014-08-26

    The present disclosure relates to photosensitive optoelectronic devices including a compound blocking layer located between an acceptor material and a cathode, the compound blocking layer including: at least one electron conducting material, and at least one wide-gap electron conducting exciton blocking layer. For example, 3,4,9,10 perylenetetracarboxylic bisbenzimidazole (PTCBI) and 1,4,5,8-napthalene-tetracarboxylic-dianhydride (NTCDA) function as electron conducting and exciton blocking layers when interposed between the acceptor layer and cathode. Both materials serve as efficient electron conductors, leading to a fill factor as high as 0.70. By using an NTCDA/PTCBI compound blocking layer structure increased power conversion efficiency is achieved, compared to an analogous device using a conventional blocking layers shown to conduct electrons via damage-induced midgap states.

  20. Efficiency enhancement of tandem organic light-emitting devices by a combined charge generation layer and organic n-type bis(ethylenedithio)-tetrathiafulvalene-doped electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Jin Taek; Kim, Dae Hun; Koh, Eun Im; Kim, Tae Whan

    2014-11-03

    While the operating voltage of the tandem organic light-emitting devices (OLEDs) with both an organic p-type 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile charge generation layer and a bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)-doped 1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene (TPBi) electron transport layer (ETL) was 1.3 V lower than that of the tandem OLEDs with a BEDT-TTF-undoped TPBi ETL. Luminance efficiency of the tandem OLEDs with a BEDT-TTF-doped TPBi ETL was 3.6 cd/A higher than that of the typical OLEDs. The increase in the luminance efficiency and the decrease in the operating voltage of the tandem OLEDs were attributed to improved electron injection due to the insertion of the BEDT-TTF-doped TPBi ETL. - Highlights: • Tandem organic light-emitting diodes (OLED) were fabricated. • OLED fabricated with an n-type bis(ethylenedithio)-tetrathiafulvalene. • Operating voltage of the tandem OLED was decreased from 19.8 to 18.5 V. • Luminance efficiency of the tandem OLED was increased from 31.8 to 35.4 cd/A. • Enhancement of the luminance efficiency in the tandem OLED was achieved.